WorldWideScience

Sample records for dose layer stacking

  1. The Effect of NPP's Stack Height to Radiation Dose

    International Nuclear Information System (INIS)

    Pandi, Liliana Yetta; Rohman, Budi

    2003-01-01

    The purpose of dose calculation for accidents is to analyze the capability of NPP to maintain the safety of public and workers in case an accident occurs on the Plant in a site. This paper calculates the Loss of Coolant Accident in PWR plant. The calculation results shows that no risks of serious radiation exposure are given to the neighboring public even if such a large accident occurred, and the effect of stack height can be predicted by analysis of the calculation results. The whole dose is calculated for some location (100 m, 300 m, 500 m, 700 m, 900 m, 1500 m, and 2000 m) with three difference stack height i.e. 0 m, 40 m and 100 m. The result of the whole dose calculation is under permitted criteria for whole dose : 0.25 Sv and thyroid dose : 3.0 Sv. The calculation of radiation dose in this paper use EEDCDQ code

  2. Low Energy Scanned Electron-Beam Dose Distribution in Thin Layers

    DEFF Research Database (Denmark)

    McLaughlin, W. L.; Hjortenberg, P. E.; Pedersen, Walther Batsberg

    1975-01-01

    Thin radiochromic dye film dosimeters, calibrated by means of calorimetry, make possible the determination of absorbed-dose distributions due to low-energy scanned electron beam penetrations in moderately thin coatings and laminar media. For electrons of a few hundred keV, calibrated dosimeters...... of about 30–60 μm thickness may be used in stacks or interleaved between layers of materials of interest and supply a sufficient number of experimental data points throughout the depth of penetration of electrons to provide a depth-dose curve. Depth doses may be resolved in various polymer layers...... on different backings (wood, aluminum, and iron) for scanned electron beams (Emax = 400 keV) having a broad energy spectrum and diffuse incidence, such as those used in radiation curing of coatings, textiles, plastics, etc. Theoretical calculations of such distributions of energy depositions are relatively...

  3. Evaluation of interlayer ferromagnetic coupling for stacked media by adding reference layer

    International Nuclear Information System (INIS)

    Tham, K K; Saito, S; Itagaki, N; Hinata, S; Takahashi, M; Hasegawa, D

    2011-01-01

    The trial for quantitative evaluation of interlayer ferromagnetic coupling between granular and cap layer in stacked media is reported. The evaluation is realized by analyzing M-H loop of stacked media with another reference layer added on the cap layer. The reference layer is antiferromagnetically coupled with the cap layer through non-magnetic spacer layer. In this experiment, Rh which leads to antiferromagnetic coupling constant along film normal direction of around 2 erg/cm 2 was used as non-magnetic spacer layer. According to the evaluation result done by this method, when thickness of the spacer Pd layer between granular layer and cap layer is increased to 1.1 nm, ferromagnetic coupling constant is weakened to 7.2 erg/cm 2 which results in reduction of saturation field.

  4. Influence of the charge double layer on solid oxide fuel cell stack behavior

    Science.gov (United States)

    Whiston, Michael M.; Bilec, Melissa M.; Schaefer, Laura A.

    2015-10-01

    While the charge double layer effect has traditionally been characterized as a millisecond phenomenon, longer timescales may be possible under certain operating conditions. This study simulates the dynamic response of a previously developed solid oxide fuel cell (SOFC) stack model that incorporates the charge double layer via an equivalent circuit. The model is simulated under step load changes. Baseline conditions are first defined, followed by consideration of minor and major deviations from the baseline case. This study also investigates the behavior of the SOFC stack with a relatively large double layer capacitance value, as well as operation of the SOFC stack under proportional-integral (PI) control. Results indicate that the presence of the charge double layer influences the SOFC stack's settling time significantly under the following conditions: (i) activation and concentration polarizations are significantly increased, or (ii) a large value of the double layer capacitance is assumed. Under normal (baseline) operation, on the other hand, the charge double layer effect diminishes within milliseconds, as expected. It seems reasonable, then, to neglect the charge double layer under normal operation. However, careful consideration should be given to potential variations in operation or material properties that may give rise to longer electrochemical settling times.

  5. Margin estimation and disturbances of irradiation field in layer-stacking carbon-ion beams for respiratory moving targets.

    Science.gov (United States)

    Tajiri, Shinya; Tashiro, Mutsumi; Mizukami, Tomohiro; Tsukishima, Chihiro; Torikoshi, Masami; Kanai, Tatsuaki

    2017-11-01

    Carbon-ion therapy by layer-stacking irradiation for static targets has been practised in clinical treatments. In order to apply this technique to a moving target, disturbances of carbon-ion dose distributions due to respiratory motion have been studied based on the measurement using a respiratory motion phantom, and the margin estimation given by the square root of the summation Internal margin2+Setup margin2 has been assessed. We assessed the volume in which the variation in the ratio of the dose for a target moving due to respiration relative to the dose for a static target was within 5%. The margins were insufficient for use with layer-stacking irradiation of a moving target, and an additional margin was required. The lateral movement of a target converts to the range variation, as the thickness of the range compensator changes with the movement of the target. Although the additional margin changes according to the shape of the ridge filter, dose uniformity of 5% can be achieved for a spherical target 93 mm in diameter when the upward range variation is limited to 5 mm and the additional margin of 2.5 mm is applied in case of our ridge filter. Dose uniformity in a clinical target largely depends on the shape of the mini-peak as well as on the bolus shape. We have shown the relationship between range variation and dose uniformity. In actual therapy, the upper limit of target movement should be considered by assessing the bolus shape. © The Author 2017. Published by Oxford University Press on behalf of The Japan Radiation Research Society and Japanese Society for Radiation Oncology.

  6. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  7. Method for the manufacture of a thin-layer battery stack on a three-dimensional substrate

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method for the manufacture of a thin-layer battery stack on a three-dimensional substrate. The invention further relates to a thin-layer battery stack on a three-dimensional substrate obtainable by such a method. Moreover, the invention relates to a device comprising such

  8. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    KAUST Repository

    Alamri, Amal M.

    2016-06-24

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.

  9. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    KAUST Repository

    Alamri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.

  10. About zone structure of a stack of a cholesteric liquid crystal and isotropic medium layers

    International Nuclear Information System (INIS)

    Gevorgyan, A H; Harutyunyan, E M; Matinyan, G K; Harutyunyan, M Z

    2014-01-01

    The optical properties of a stack of metamaterial-based cholesteric liquid crystal (CLC) layers and isotropic medium layers are investigated. CLCs with two types of chiral nihility are defined. The peculiarities of the reflection spectra of this system are investigated and it is shown that the reflection spectra of the stacks of CLC layers of these two types differ from each other. The influence of: the CLC sublayer thicknesses; incidence angle; local dielectric (magnetic) anisotropy of the CLC layers; refraction indices and thicknesses of the isotropic media layers on the reflection spectra and other optical characteristics of the system is investigated.

  11. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  12. Influences of Stacking Architectures of TiO2 Nanoparticle Layers on Characteristics of Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Chih-Hung Tsai

    2013-01-01

    Full Text Available We investigated the influences of stacking architectures of the TiO2 nanoparticle layers on characteristics and performances of DSSCs. TiO2 nanoparticles of different sizes and compositions were characterized for their morphological and optical/scattering properties in thin films. They were used to construct different stacking architectures of the TiO2 nanoparticle layers for use as working electrodes of DSSCs. Characteristics and performances of DSSCs were examined to establish correlation of the stacking architectures of TiO2 nanoparticle layers with characteristics of DSSCs. The results suggest that the three-layer DSSC architecture, with sandwiching a 20 nm TiO2 nanoparticle layer between a 37 nm TiO2 nanoparticle layer and a hundred nm sized TiO2 back scattering/reflection layer, is effective in enhancing DSSC efficiencies. The high-total-transmittance 37 nm TiO2 nanoparticle layer with a larger haze can serve as an effective front scattering layer to scatter a portion of the incident light into larger oblique angles and therefore increase optical paths and absorption.

  13. Dose assessment from potential radionuclide emissions from stacks on the Hanford Site

    International Nuclear Information System (INIS)

    Davis, W.E.; Barnett, J.M.

    1995-04-01

    On February 3, 1993, the US Department of Energy, Richland Operations Office (RL), received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the US Environmental Protection Agency (EPA), Region 10. The Compliance Order required RL to (1) evaluate all radionuclide emission points at the Hanford Site to determine which points are subject to the continuous emission sampling requirements of Title 40, Code of Federal Regulations, Part 61 (40 CFR 61), Subpart H, and (2) continuously sample radionuclide emissions in accordance with requirements in 40 CFR 61.93. The Information Request required RL to provide a written Compliance Plan to meet the requirements of the Compliance Order. A Compliance Plan was submitted to EPA, Region 10, on April 30, 1993. The Compliance Plan specified that a dose assessment would be performed for 84 Westinghouse Hanford Company (WHC) stacks registered with the Washington State Department of Health on the Hanford Site. Any stack identified in the assessment as having potential emissions to cause an effective dose equivalent (EDE) to a maximum exposed individual (MEI) greater than 0.1 mrem y -1 must have a compliant sampling system. In addition, a Federal Facility Compliance Agreement (FFCA) was signed on. February 7, 1994. The FFCA required that all unregistered stacks on the Hanford Site be assessed. This requirement increased the number of stacks to be assessed to 123 stacks. Six methods for performing the assessments are described. An initial assessment using only the HEPA filtration factor for back calculations identified 32 stacks that would have emissions which would cause an EDE to the MEI greater than 0.1 mrem y -1 . When the other methods were applied the number was reduced to 20 stacks. The paper discusses reasons for these overestimates

  14. Dose assessment for potential radionuclide emissions from stacks on the Hanford Site: NESHAP compliance

    International Nuclear Information System (INIS)

    Davis, W.E.; Barnett, J.M.; Kenoyer, J.L.

    1994-03-01

    The purpose of this document is to present the assessment results for the registered stacks on the Hanford Site for potential emissions, i.e. emissions with no control devices in place. Further, the document will identify those stacks requiring continuous monitoring, i.e. the effective dose equivalent from potential emissions >0.1 mrem/yr. The stack assessment of potential emissions was performed on 84 registered stacks on the Hanford Site. These emission sources represent individual point sources presently registered under Washington Administrative code 246-247 with the Washington Department of Health. The methods used in assessing the potential emissions from the stacks are described

  15. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  16. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    Science.gov (United States)

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  17. Stacking and electric field effects in atomically thin layers of GaN

    International Nuclear Information System (INIS)

    Xu, Dongwei; He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2013-01-01

    Atomically thin layers of nitrides are a subject of interest due to their novel applications. In this paper, we focus on GaN multilayers, investigating their stability and the effects of stacking and electric fields on their electronic properties in the framework of density functional theory. Both bilayers and trilayers prefer a planar configuration rather than a buckled bulk-like configuration. The application of an external perpendicular electric field induces distinct stacking-dependent features in the electronic properties of nitride multilayers: the band gap of a monolayer does not change whereas that of a trilayer is significantly reduced. Such a stacking-dependent tunability of the band gap in the presence of an applied field suggests that multilayer GaN is a good candidate material for next generation devices at the nanoscale. (paper)

  18. Influence of the stacking sequence of layers on the mechanical behavior of polymeric composite cylinders

    International Nuclear Information System (INIS)

    Carvalho, Osni de

    2006-01-01

    This work evaluated experimentally the influence of the stacking sequence of layers symmetrical and asymmetrical on the mechanical behavior of polymeric composite cylinders. For so much, two open-ended cylinders groups were manufactured by filament winding process, which had different stacking sequence related to the laminate midplane, characterizing symmetrical and asymmetrical laminates. The composite cylinders were made with epoxy matrix and carbon fiber as reinforcement. For evaluation of the mechanical strength, the cylinders were tested hydrostatically, which consisted of internal pressurization in a hydrostatic device through the utilization of a fluid until the cylinders burst. Additionally, were compared the strains and failure modes between the cylinders groups. The utilization of a finite element program allowed to conclude that this tool, very used in design, does not get to identify tensions in the fiber direction in each composite layer, as well as interlaminar shear stress, that appears in the cylinders with asymmetrical stacking sequence. The tests results showed that the stacking sequence had influence in the mechanical behavior of the composite cylinders, favoring the symmetrical construction. (author)

  19. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    Science.gov (United States)

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-06

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

  20. Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

    2006-06-15

    Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

  1. Unusual reflection of electromagnetic radiation from a stack of graphene layers at oblique incidence

    International Nuclear Information System (INIS)

    Bludov, Yu V; Peres, N M R; Vasilevskiy, M I

    2013-01-01

    We study the interaction of electromagnetic (EM) radiation with single-layer graphene and a stack of parallel graphene sheets at arbitrary angles of incidence. It is found that the behavior is qualitatively different for transverse magnetic (or p-polarized) and transverse electric (or s-polarized) waves. In particular, the absorbance of single-layer graphene attains a minimum (maximum) for the p (s)-polarization at the angle of total internal reflection when the light comes from a medium with a higher dielectric constant. In the case of equal dielectric constants of the media above and beneath graphene, for grazing incidence graphene is almost 100% transparent to p-polarized waves and acts as a tunable mirror for the s-polarization. These effects are enhanced for a stack of graphene sheets, so the system can work as a broad band polarizer. It is shown further that a periodic stack of graphene layers has the properties of a one-dimensional photonic crystal, with gaps (or stop bands) at certain frequencies. When an incident EM wave is reflected from this photonic crystal, the tunability of the graphene conductivity renders the possibility of controlling the gaps, and the structure can operate as a tunable spectral-selective mirror. (paper)

  2. Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

    International Nuclear Information System (INIS)

    Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

    2011-01-01

    This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

  3. Cell layer level generalized dynamic modeling of a PEMFC stack using VHDL-AMS language

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Fei; Blunier, Benjamin; Miraoui, Abdellatif; El-Moudni, Abdellah [Transport and Systems Laboratory (SeT) - EA 3317/UTBM, University of Technology of Belfort-Montbeliard, Rue Thierry Mieg, 90000 Belfort (France)

    2009-07-15

    A generalized, cell layer scale proton exchange membrane fuel cell (PEMFC) stack dynamic model is presented using VHDL-AMS (IEEE standard Very High Speed Integrated Circuit Hardware Description Language-Analog and Mixed-Signal Extensions) modeling language. A PEMFC stack system is a complex energy conversion system that covers three main energy domains: electrical, fluidic and thermal. The first part of this work shows the performance and the advantages of VHDL-AMS language when modeling such a complex system. Then, using the VHDL-AMS modeling standards, an electrical domain model, a fluidic domain model and a thermal domain model of the PEMFC stack are coupled and presented together. Thus, a complete coupled multi-domain fuel cell stack 1-D dynamic model is given. The simulation results are then compared with a Ballard 1.2 kW NEXA fuel cell system, and show a great agreement between the simulation and experimentation. This complex multi-domain VHDL-AMS stack model can be used for a model based control design or a Hardware-In-the-Loop application. (author)

  4. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    International Nuclear Information System (INIS)

    Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

    2012-01-01

    Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  5. Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

    International Nuclear Information System (INIS)

    Dos Santos, Renato B; Mota, F de Brito; Rivelino, R; Kakanakova-Georgieva, A; Gueorguiev, G K

    2016-01-01

    Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene. (paper)

  6. Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

    Science.gov (United States)

    Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

    2016-09-01

    Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

  7. Environmental assessment of phosphogypsum stacks

    International Nuclear Information System (INIS)

    Odat, M.; Al-Attar, L.; Raja, G.; Abdul Ghany, B.

    2008-03-01

    Phosphogypsum is one of the most important by-products of phosphate fertilizer industry. It is kept in large stacks to the west of Homs city. Storing Phosphogypsum as open stacks exposed to various environmental effects, wind and rain, may cause pollution of the surrounding ecosystem (soil, plant, water and air). This study was carried out in order to assess the environmental impact of Phosphogypsum stacks on the surrounding ecosystem. The obtained results show that Phosphogypsum stacks did not increase the concentration of radionuclides, i.e. Radon-222 and Radium-226, the external exposed dose of gamma rays, as well as the concentration of heavy metals in the components of the ecosystem, soil, plant, water and air, as their concentrations did not exceed the permissible limits. However, the concentration of fluorine in the upper layer of soil, located to the east of the Phosphogypsum stacks, increased sufficiently, especially in the dry period of the year. Also, the concentration of fluoride in plants growing up near-by the Phosphogypsum stacks was too high, exceeded the permissible levels. This was reflected in poising plants and animals, feeding on the plants. Consequently, increasing the concentration of fluoride in soil and plants is the main impact of Phosphogypsum stacks on the surrounding ecosystem. Minimising this effect could be achieved by establishing a 50 meter wide protection zone surrounding the Phosphogypsum stacks, which has to be planted with non palatable trees, such as pine and cypress, forming wind barriers. Increasing the concentrations of heavy metals and fluoride in infiltrated water around the stacks was high; hence cautions must be taken to prevent its usage in any application or disposal in adjacent rivers and leaks.(author)

  8. Environmental assessment of phosphogypsum stacks

    International Nuclear Information System (INIS)

    Odat, M.; Al-Attar, L.; Raja, G.; Abdul Ghany, B.

    2009-01-01

    Phosphogypsum is one of the most important by-products of phosphate fertilizer industry. It is kept in large stacks to the west of Homs city. Storing Phosphogypsum as open stacks exposed to various environmental effects, wind and rain, may cause pollution of the surrounding ecosystem (soil, plant, water and air). This study was carried out in order to assess the environmental impact of Phosphogypsum stacks on the surrounding ecosystem. The obtained results show that Phosphogypsum stacks did not increase the concentration of radionuclides, i.e. Radon-222 and Radium-226, the external exposed dose of gamma rays, as well as the concentration of heavy metals in the components of the ecosystem, soil, plant, water and air, as their concentrations did not exceed the permissible limits. However, the concentration of fluorine in the upper layer of soil, located to the east of the Phosphogypsum stacks, increased sufficiently, especially in the dry period of the year. Also, the concentration of fluoride in plants growing up near-by the Phosphogypsum stacks was too high, exceeded the permissible levels. This was reflected in poising plants and animals, feeding on the plants. Consequently, increasing the concentration of fluoride in soil and plants is the main impact of Phosphogypsum stacks on the surrounding ecosystem. Minimising this effect could be achieved by establishing a 50 meter wide protection zone surrounding the Phosphogypsum stacks, which has to be planted with non palatable trees, such as pine and cypress, forming wind barriers. Increasing the concentrations of heavy metals and fluoride in infiltrated water around the stacks was high; hence cautions must be taken to prevent its usage in any application or disposal in adjacent rivers and leaks.(author)

  9. Report on radiation exposure of lead-scintillator stack

    International Nuclear Information System (INIS)

    Underwood, D.G.

    1990-01-01

    A stack of lead and scintillator was placed in a neutral beam obtained from targeting 800 GeV protons. Small pieces of film containing radiochromic dye were placed adjacent to the layers of scintillator for the purpose of measuring the radiation dose to the scintillator. Our motivation was to calibrate the radiation dose obtainable in this manner for future tests of scintillator for SSC experiments and to relate dose to flux to check absolute normalization for calculations. We also observed several other radiation effects which should be considered for both damage and compensation in a calorimeter

  10. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

    Science.gov (United States)

    Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

    2018-06-01

    In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

  11. Is There Excitation Energy Transfer between Different Layers of Stacked Photosystem-II-Containing Thylakoid Membranes?

    Science.gov (United States)

    Farooq, Shazia; Chmeliov, Jevgenij; Trinkunas, Gediminas; Valkunas, Leonas; van Amerongen, Herbert

    2016-04-07

    We have compared picosecond fluorescence decay kinetics for stacked and unstacked photosystem II membranes in order to evaluate the efficiency of excitation energy transfer between the neighboring layers. The measured kinetics were analyzed in terms of a recently developed fluctuating antenna model that provides information about the dimensionality of the studied system. Independently of the stacking state, all preparations exhibited virtually the same value of the apparent dimensionality, d = 1.6. Thus, we conclude that membrane stacking does not affect the efficiency of the delivery of excitation energy toward the reaction centers but ensures a more compact organization of the thylakoid membranes within the chloroplast and separation of photosystems I and II.

  12. A real-time stack radioactivity monitoring system and dose projection program

    Energy Technology Data Exchange (ETDEWEB)

    Hull, A.P.; Michael, P.A. [Brookhaven National Laboratory, Upton, NY (United States); Bernstein, H.J. [Bernstein & Sons, Bellport, NY (United States)

    1995-02-01

    At Brookhaven National Laboratory, a commercial Low- and High-Range Air Effluent Monitor has become operational at the 60 Mw (t) High Flux Beam Reactor. Its output data is combined with that from ground-level and elevated meteorological sensors to provide a real-time projection of the down-wind dose rates from noble gases and radioiodines released from the HFBR`s 100 m stack. The output of the monitor, and the meteorological sensors and the dose projections can be viewed at emergency response terminals located in the Reactor Control Room, its Technical Support Center and at the laboratory`s separately located Meteorological Station and Monitoring and Assessment Center.

  13. Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature.

    Science.gov (United States)

    Velasco, J Marquez; Giamini, S A; Kelaidis, N; Tsipas, P; Tsoutsou, D; Kordas, G; Raptis, Y S; Boukos, N; Dimoulas, A

    2015-10-09

    Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

  14. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  15. Short-Range Stacking Disorder in Mixed-Layer Compounds: A HAADF STEM Study of Bastnäsite-Parisite Intergrowths

    Directory of Open Access Journals (Sweden)

    Cristiana L. Ciobanu

    2017-11-01

    Full Text Available Atomic-scale high angle annular dark field scanning transmission electron microscopy (HAADF STEM imaging and electron diffractions are used to address the complexity of lattice-scale intergrowths of REE-fluorocarbonates from an occurrence adjacent to the Olympic Dam deposit, South Australia. The aims are to define the species present within the intergrowths and also assess the value of the HAADF STEM technique in resolving stacking sequences within mixed-layer compounds. Results provide insights into the definition of species and crystal-structural modularity. Lattice-scale intergrowths account for the compositional range between bastnäsite and parasite, as measured by electron probe microanalysis (at the µm-scale throughout the entire area of the intergrowths. These comprise rhythmic intervals of parisite and bastnäsite, or stacking sequences with gradational changes in the slab stacking between B, BBS and BS types (B—bastnäsite, S—synchysite. An additional occurrence of an unnamed B2S phase [CaCe3(CO34F3], up to 11 unit cells in width, is identified among sequences of parisite and bastnäsite within the studied lamellar intergrowths. Both B2S and associated parisite show hexagonal lattices, interpreted as 2H polytypes with c = 28 and 38 Å, respectively. 2H parisite is a new, short hexagonal polytype that can be added to the 14 previously reported polytypes (both hexagonal and rhombohedral for this mineral. The correlation between satellite reflections and the number of layers along the stacking direction (c* can be written empirically as: Nsat = [(m × 2 + (n × 4] − 1 for all BmSn compounds with S ≠ 0. The present study shows intergrowths characterised by short-range stacking disorder and coherent changes in stacking along perpendicular directions. Knowing that the same compositional range can be expressed as long-period stacking compounds in the group, the present intergrowths are interpreted as being related to disequilibrium

  16. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    Science.gov (United States)

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  17. Sliding behavior of oil droplets on nanosphere stacking layers with different surface textures

    International Nuclear Information System (INIS)

    Hsieh, Chien-Te; Wu, Fang-Lin; Chen, Wei-Yu

    2010-01-01

    Two facile coating techniques, gravitational sediment and spin coating, were applied for the creation of silica sphere stacking layers with different textures onto glass substrates that display various sliding abilities toward liquid drops with different surface tensions, ranged from 25.6 to 72.3 mN/m. The resulting silica surface exhibits oil repellency, long-period durability > 30 days, and oil sliding capability. The two-tier texture offers a better roll-off ability toward liquid drops with a wide range of γ L , ranged from 30.2 to 72.3 mN/m, i.e., when the sliding angle (SA) ad ) appears to describe the sliding behavior within the W ad region: 2.20-3.03 mN/m. The smaller W ad , the easier drop sliding (i.e., the smaller SA value) takes place on the surfaces. The W ad value ∼3.03 mN/m shows a critical kinetic barrier for drop sliding on the silica surfaces from stationary to movement states. This work proposes a mathematical model to simulate the sliding behavior of oil drops on a nanosphere stacking layer, confirming the anti-oil contamination capability.

  18. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  19. Potential radionuclide emissions from stacks on the Hanford Site. Part 1: Dose assessment

    International Nuclear Information System (INIS)

    Davis, W.E.; Barnett, J.M.

    1994-06-01

    On February 3, 1993, the US Department of Energy, Richland Operations Office (RL) received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the US Environmental Protection Agency (EPA), Region 10. The Compliance Plan specified that a dose assessment would be performed for 84 Westinghouse Hanford Company (WHC) stacks registered with the Washington State Department of Health (WAC 246-247) on the Hanford Site. Stacks that have the potential emissions to cause an effective dose equivalent (EDE) to a maximum exposed individual (MEI) greater than 0.1 mrem y -1 must be monitored continuously for radionuclide emissions. Five methods were approved by EPA, Region 10 for performing the assessments: Release Fractions from Appendix D of 40 CFR 61, Back Calculations Using A HEPA Filtration Factor, Nondestructive Assay of HEPA Filters, A Spill Release Fraction, and Upstream of HEPA Filter Air Concentrations. The first two methods were extremely conservative for estimating releases. The third method which used a state-of-the-art portable gamma spectrometer, yielded surprising results from the distribution of radionuclides on the HEPA filters. All five methods are described

  20. Birnessite-type MnO2 nanosheets with layered structures under high pressure: elimination of crystalline stacking faults and oriented laminar assembly.

    Science.gov (United States)

    Sun, Yugang; Wang, Lin; Liu, Yuzi; Ren, Yang

    2015-01-21

    Squeezing out crystalline stacking faults: Birnessite-type δ-phase MnO2 microflowers containing interconnected ultrathin nanosheets are synthesized through a microwave-assisted hydrothermal process and exhibit a layered crystalline structure with significant stacking faults. Compressing these MnO2 nanosheets in a diamond anvil cell with high pressure up to tens of GPa effectively eliminates the crystalline stacking faults. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Potential radionuclide emissions from stacks on the Hanford site, Part 1: Dose assessment

    Energy Technology Data Exchange (ETDEWEB)

    Davis, W.E.; Barnett, J.M. [Westinghouse Hanford Company, Richland, WA (United States)

    1995-02-01

    On February 3, 1993, the U.S. Department of Energy, Richland Operations Office received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the U.S. Environmental Protection Agency, Region 10. The Compliance Order requires RL to evaluate all radionuclide emission points at the Hanford Site to determine which are subject to continuous emission monitoring requirements in 40 CFR 61, Subpart H, and to continuously monitor radionuclide emissions in accordance with requirements in 40 CFR 61.93. The Information Request required RL to provide a written Compliance Plan to meet the requirements of the Compliance Order. A Compliance Plan was submitted to EPA, Region 10, on April 30, 1993. The Compliance Plan specified that a dose assessment would be performed for 84 Westinghouse Hanford Company stacks registered with the Washington State Department of Health on the Hanford Site. Stacks that have the potential emissions to cause an effective dose equivalent to a maximum exposed individual greater than 0.1 mrem/y must be monitored continuously for radionuclide emissions. Five methods were approved by EPA, Region 10 for performing the assessments: Release Fractions from Appendix D of 40 CFR 61, Back Calculations Using A HEPA Filtration Factor, Nondestructive Assay of HEPA Filters, A Spill Release Fraction, and Upstream of HEPA Filter Air Concentrations. The first two methods were extremely conservative for estimating releases. The third method, which used a state-of-the-art portable gamma spectrometer, yielded surprising results from the distribution of radionuclides on the HEPA filters. All five methods are described. Assessments using a HEPA Filtration Factor for back calculations identified 32 stacks that would have emissions that would cause an EDE to the MEI greater than 0.1 mrem y{sup {minus}1}. The number was reduced to 15 stacks when the other methods were applied. The paper discusses reasons for the overestimates.

  2. Structure and stacking faults in layered Mg-Zn-Y alloys: A first-principles study

    International Nuclear Information System (INIS)

    Datta, Aditi; Waghmare, U.V.; Ramamurty, U.

    2008-01-01

    We use first-principles density functional theory total energy calculations based on pseudo-potentials and plane-wave basis to assess stability of the periodic structures with different stacking sequences in Mg-Zn-Y alloys. For pure Mg, we find that the 6-layer (6l) structure with the ABACAB stacking is most stable after the lowest energy hcp (2l) structure with ABAB stacking. Addition of 2 at.% Y leads to stabilization of the structure to 6l sequence whereas the addition of 2 at.% Zn makes the 6l energetically comparable to that of the hcp. Stacking fault (SF) on the basal plane of 6l structure is higher in energy than that of the hcp 2l Mg, which further increases upon Y doping and decreases significantly with Zn doping. SF energy surface for the prismatic slip indicates activation of non-basal slip in alloys with a 6l structure. Charge density analysis shows that the 2l and 6l structures are electronically similar which might be a cause for better stability of 6l structure over a 4l sequence or other periodic structures. Thus, in an Mg-Zn-Y alloy, Y stabilizes the long periodicity, while its mechanical properties are further improved due to Zn doping

  3. Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

    Science.gov (United States)

    Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

    2018-06-01

    In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

  4. Consolidity: Stack-based systems change pathway theory elaborated

    Directory of Open Access Journals (Sweden)

    Hassen Taher Dorrah

    2014-06-01

    Full Text Available This paper presents an elaborated analysis for investigating the stack-based layering processes during the systems change pathway. The system change pathway is defined as the path resulting from the combinations of all successive changes induced on the system when subjected to varying environments, activities, events, or any excessive internal or external influences and happenings “on and above” its normal stands, situations or set-points during its course of life. The analysis is essentially based on the important overall system paradigm of “Time driven-event driven-parameters change”. Based on this paradigm, it is considered that any affected activity, event or varying environment is intelligently self-recorded inside the system through an incremental consolidity-scaled change in system parameters of the stack-based layering types. Various joint stack-based mathematical and graphical approaches supported by representable case studies are suggested for the identification, extraction, and processing of various stack-based systems changes layering of different classifications and categorizations. Moreover, some selected real life illustrative applications are provided to demonstrate the (infinite stack-based identification and recognition of the change pathway process in the areas of geology, archeology, life sciences, ecology, environmental science, engineering, materials, medicine, biology, sociology, humanities, and other important fields. These case studies and selected applications revealed that there are general similarities of the stack-based layering structures and formations among all the various research fields. Such general similarities clearly demonstrate the global concept of the “fractals-general stacking behavior” of real life systems during their change pathways. Therefore, it is recommended that concentrated efforts should be expedited toward building generic modular stack-based systems or blocks for the mathematical

  5. Optimized stacked RADFETs for milli-rad dose measurement

    International Nuclear Information System (INIS)

    O'Connell, B.; Lane, B.; Mohammadzadeh, A.

    1999-01-01

    This paper details the improvements in the design of stacked RADFETs for increased radiation sensitivity. The issues of high read-out voltage has been shown to be a draw-back. It is the body (bulk)effect factor that is responsible for the increased overall stack Threshold voltage (V T ), which is greater than the sum of the individual devices V T . From extensive process and device simulation and resultant circuit simulation, modified stack structures have been proposed and designed. New and exciting result of lower initial (pre-irradiation) output voltage as well as increased radiation sensitivity will be presented. (author)

  6. Inter-layered clay stacks in Jurassic shales

    Science.gov (United States)

    Pye, K.; Krinsley, D. H.

    1983-01-01

    Scanning electron microscopy in the backscattered electron mode is used together with energy-dispersive X-ray microanalysis to show that Lower Jurassic shales from the North Sea Basin contain large numbers of clay mineral stacks up to 150 microns in size. Polished shale sections are examined to determine the size, shape orientation, textural relationships, and internal compositional variations of the clays. Preliminary evidence that the clay stacks are authigenic, and may have formed at shallow burial depths during early diagenesis, is presented.

  7. Optimum stacking sequence design of laminated composite circular plates with curvilinear fibres by a layer-wise optimization method

    Science.gov (United States)

    Guenanou, A.; Houmat, A.

    2018-05-01

    The optimum stacking sequence design for the maximum fundamental frequency of symmetrically laminated composite circular plates with curvilinear fibres is investigated for the first time using a layer-wise optimization method. The design variables are two fibre orientation angles per layer. The fibre paths are constructed using the method of shifted paths. The first-order shear deformation plate theory and a curved square p-element are used to calculate the objective function. The blending function method is used to model accurately the geometry of the circular plate. The equations of motion are derived using Lagrange's method. The numerical results are validated by means of a convergence test and comparison with published values for symmetrically laminated composite circular plates with rectilinear fibres. The material parameters, boundary conditions, number of layers and thickness are shown to influence the optimum solutions to different extents. The results should serve as a benchmark for optimum stacking sequences of symmetrically laminated composite circular plates with curvilinear fibres.

  8. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    International Nuclear Information System (INIS)

    Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

    2016-01-01

    Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  9. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kordatos, Apostolis [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Kelaidis, Nikolaos, E-mail: n.kelaidis@inn.demokritos.gr [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Giamini, Sigiava Aminalragia [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); University of Athens, Department of Physics, Section of Solid State Physics, Athens, 15684 Greece (Greece); Marquez-Velasco, Jose [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); National Technical University of Athens, Department of Physics, Athens, 15784 Greece (Greece); Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece)

    2016-04-30

    Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  10. Towards stacked zone plates

    International Nuclear Information System (INIS)

    Werner, S; Rehbein, S; Guttman, P; Heim, S; Schneider, G

    2009-01-01

    Fresnel zone plates are the key optical elements for soft and hard x-ray microscopy. For short exposure times and minimum radiation load of the specimen the diffraction efficiency of the zone plate objectives has to be maximized. As the efficiency strongly depends on the height of the diffracting zone structures the achievable aspect ratio of the nanostructures determines these limits. To reach aspect ratios ≥ 20:1 for high efficient optics we propose to superimpose zone plates on top of each other. With this multiplication approach the final aspect ratio is only limited by the number of stacked zone plate layers. For the stack process several nanostructuring process steps have to be developed and/or improved. Our results show for the first time two layers of zone plates stacked on top of each other.

  11. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    Science.gov (United States)

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-05-05

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  12. Fabrication of high gradient insulators by stack compression

    Science.gov (United States)

    Harris, John Richardson; Sanders, Dave; Hawkins, Steven Anthony; Norona, Marcelo

    2014-04-29

    Individual layers of a high gradient insulator (HGI) are first pre-cut to their final dimensions. The pre-cut layers are then stacked to form an assembly that is subsequently pressed into an HGI unit with the desired dimension. The individual layers are stacked, and alignment is maintained, using a sacrificial alignment tube that is removed after the stack is hot pressed. The HGI's are used as high voltage vacuum insulators in energy storage and transmission structures or devices, e.g. in particle accelerators and pulsed power systems.

  13. Stability and performance improvement of a polymer electrolyte membrane fuel cell stack by laser perforation of gas diffusion layers

    Energy Technology Data Exchange (ETDEWEB)

    Gerteisen, Dietmar; Sadeler, Christian [Fraunhofer Institute for Solar Energy Systems ISE, Department of Energy Technology, Heidenhofstrasse 2, 79110 Freiburg (Germany)

    2010-08-15

    The performance and stability of a hydrogen-driven polymer electrolyte membrane fuel cell stack (6-cell PEFC stack) are investigated with regard to pore flooding within the gas diffusion layers (GDLs). Two short stacks with various GDLs (Toray TGP-H-060 untreated and laser-perforated) were characterized at different operating conditions by several characterization techniques such as constant current load, polarization curve, chronoamperometry and chronovoltammetry. The experimental results reveal that the perforation of the cathode GDLs improves the water transport in the porous media and thus the performance as well as the stability of the operating stack in medium and high current density range. A reduced pore flooding is verified when using the customized laser-perforated GDLs. The GDL perforation has a huge potential to balance the inhomogeneous in-plane saturation conditions between the inlet and outlet area of the cell and to compensate to a certain degree the effects of temperature distribution within a stack regarding the water management. (author)

  14. Stability and performance improvement of a polymer electrolyte membrane fuel cell stack by laser perforation of gas diffusion layers

    Science.gov (United States)

    Gerteisen, Dietmar; Sadeler, Christian

    The performance and stability of a hydrogen-driven polymer electrolyte membrane fuel cell stack (6-cell PEFC stack) are investigated with regard to pore flooding within the gas diffusion layers (GDLs). Two short stacks with various GDLs (Toray TGP-H-060 untreated and laser-perforated) were characterized at different operating conditions by several characterization techniques such as constant current load, polarization curve, chronoamperometry and chronovoltammetry. The experimental results reveal that the perforation of the cathode GDLs improves the water transport in the porous media and thus the performance as well as the stability of the operating stack in medium and high current density range. A reduced pore flooding is verified when using the customized laser-perforated GDLs. The GDL perforation has a huge potential to balance the inhomogeneous in-plane saturation conditions between the inlet and outlet area of the cell and to compensate to a certain degree the effects of temperature distribution within a stack regarding the water management.

  15. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  16. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  17. Iridium Interfacial Stack (IRIS)

    Science.gov (United States)

    Spry, David James (Inventor)

    2015-01-01

    An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

  18. Simple Stacking Methods for Silicon Micro Fuel Cells

    Directory of Open Access Journals (Sweden)

    Gianmario Scotti

    2014-08-01

    Full Text Available We present two simple methods, with parallel and serial gas flows, for the stacking of microfabricated silicon fuel cells with integrated current collectors, flow fields and gas diffusion layers. The gas diffusion layer is implemented using black silicon. In the two stacking methods proposed in this work, the fluidic apertures and gas flow topology are rotationally symmetric and enable us to stack fuel cells without an increase in the number of electrical or fluidic ports or interconnects. Thanks to this simplicity and the structural compactness of each cell, the obtained stacks are very thin (~1.6 mm for a two-cell stack. We have fabricated two-cell stacks with two different gas flow topologies and obtained an open-circuit voltage (OCV of 1.6 V and a power density of 63 mW·cm−2, proving the viability of the design.

  19. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  20. Stacking layered structure of polymer light emitting diodes prepared by evaporative spray deposition using ultradilute solution for improving carrier balance

    International Nuclear Information System (INIS)

    Aoki, Youichi; Shakutsui, Masato; Fujita, Katsuhiko

    2009-01-01

    Polymer light-emitting diodes (PLEDs) with staking layered structures are prepared by the evaporative spray deposition using ultradilute solution (ESDUS) method, which has enabled forming a polymer layer onto another polymer layer even if both polymers are soluble in a solvent used for the preparation. By this method, polymers having various HOMO and LUMO levels can be stacked as a hole transport layer, an emitting layer and an electron transport layer as commonly employed in small molecule-based organic light emitting diodes. Here we demonstrated that a PLED having a tri-layer structure using three kinds of polymers showed significant improvement in quantum efficiency compared with those having a single or bi-layer structure of corresponding polymers.

  1. Development of a multi-layer ion chamber for measurement of depth dose distributions of heavy-ion therapeutic beam for individual patients

    International Nuclear Information System (INIS)

    Shimbo, Munefumi; Futami, Yasuyuki; Yusa, Ken; Matsufuji, Naruhiro; Kanai, Tatsuaki; Urakabe, Eriko; Yamashita, Haruo; Akagi, Takashi; Higashi, Akio

    2000-01-01

    In heavy-ion radiotherapy, an accelerated beam is modified to realize a desired dose distribution in patients. The set-up of the beam-modifying devices in the irradiation system is changed according to the patient, and it is important to check the depth dose distributions in the patient. In order to measure dose distributions realized by an irradiation system for heavy-ion radiotherapy, a multi-layer ionization chamber (MLIC) was developed. The MLIC consists of 64 ionization chambers, which are stacked mutually. The interval between each ionization chamber is about 4.1 mm water. There are signal and high voltage plates in the MLIC, which are used as electrodes of the ionization chambers and phantom. Depth dose distribution from 5.09 mm to 261.92 mm water can be measured in about 30 seconds using this MLIC. Thus, it is possible to check beam quality in a short amount of time. (author)

  2. Stacking dependence of carrier transport properties in multilayered black phosphorous

    Science.gov (United States)

    Sengupta, A.; Audiffred, M.; Heine, T.; Niehaus, T. A.

    2016-02-01

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green’s function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  3. Electrochemical Detection in Stacked Paper Networks.

    Science.gov (United States)

    Liu, Xiyuan; Lillehoj, Peter B

    2015-08-01

    Paper-based electrochemical biosensors are a promising technology that enables rapid, quantitative measurements on an inexpensive platform. However, the control of liquids in paper networks is generally limited to a single sample delivery step. Here, we propose a simple method to automate the loading and delivery of liquid samples to sensing electrodes on paper networks by stacking multiple layers of paper. Using these stacked paper devices (SPDs), we demonstrate a unique strategy to fully immerse planar electrodes by aqueous liquids via capillary flow. Amperometric measurements of xanthine oxidase revealed that electrochemical sensors on four-layer SPDs generated detection signals up to 75% higher compared with those on single-layer paper devices. Furthermore, measurements could be performed with minimal user involvement and completed within 30 min. Due to its simplicity, enhanced automation, and capability for quantitative measurements, stacked paper electrochemical biosensors can be useful tools for point-of-care testing in resource-limited settings. © 2015 Society for Laboratory Automation and Screening.

  4. Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction System

    Science.gov (United States)

    Xu, Tian-Bing (Inventor); Jiang, Xiaoning (Inventor); Su, Ji (Inventor)

    2014-01-01

    A novel full piezoelectric multilayer stacked hybrid actuation/transduction system. The system demonstrates significantly-enhanced electromechanical performance by utilizing the cooperative contributions of the electromechanical responses of multilayer stacked negative and positive strain components. Both experimental and theoretical studies indicate that for this system, the displacement is over three times that of a same-sized conventional flextensional actuator/transducer. The system consists of at least 2 layers which include electromechanically active components. The layers are arranged such that when electric power is applied, one layer contracts in a transverse direction while the second layer expands in a transverse direction which is perpendicular to the transverse direction of the first layer. An alternate embodiment includes a third layer. In this embodiment, the outer two layers contract in parallel transverse directions while the middle layer expands in a transverse direction which is perpendicular to the transverse direction of the outer layers.

  5. Nature of Interlayer Binding and Stacking of sp–sp 2 Hybridized Carbon Layers: A Quantum Monte Carlo Study

    International Nuclear Information System (INIS)

    Shin, Hyeondeok; Lee, Hoonkyung; Heinonen, Olle; Benali, Anouar; Kwon, Yongkyung

    2017-01-01

    α-graphyne is a two-dimensional sheet of sp-sp2 hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, α-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable bandgap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult to model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that inter-layer bindings of sp- and sp2-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) eV/atom. From this we conclude that the two stable stacking modes of bilayer α-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other.

  6. Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Que, Yande; Xiao, Wende, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn; Chen, Hui; Wang, Dongfei; Du, Shixuan; Gao, Hong-Jun, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn [Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-12-28

    The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

  7. Investigation of stacked elemental layers for Cu(In,Ga)Se{sub 2} thin film preparation by rapid thermal selenization

    Energy Technology Data Exchange (ETDEWEB)

    Stroth, Christiane; Ohland, Joerg; Mikolajczak, Ulf; Madena, Thomas; Keller, Jan; Parisi, Juergen; Hammer, Maria; Riedel, Ingo [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg (Germany)

    2013-07-01

    Rapid thermal selenization of pure metallic (Cu-In-Ga) or selenium-containing (Cu-In-Ga-Se) precursors is a favorable method to fabricate Cu(In,Ga)Se{sub 2} absorber films for application in thin film solar cells. Because of its upscaling potential and the short process time it is a promising approach for the fabrication of CIGSe photovoltaic modules on industrial scale. As a preliminary work for prospective plasma-enhanced selenization of stacked elemental layers (SEL) the elements copper, indium and gallium were sequentially deposited on molybdenum coated soda-lime glass by thermal evaporation. The stacking order was varied and the precursors were annealed with different heating rates. Morphology, elemental depth distribution and phases of the layers were investigated before and after annealing using scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction. Furthermore the influence of different heating rates on phase transitions during annealing was studied by in-situ X-ray diffraction.

  8. Ablation of film stacks in solar cell fabrication processes

    Science.gov (United States)

    Harley, Gabriel; Kim, Taeseok; Cousins, Peter John

    2013-04-02

    A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.

  9. Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation

    Science.gov (United States)

    Kim, Do-Bin; Kwon, Dae Woong; Kim, Seunghyun; Lee, Sang-Ho; Park, Byung-Gook

    2018-02-01

    To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.

  10. Complementary and bipolar regimes of resistive switching in TiN/HfO{sub 2}/TiN stacks grown by atomic-layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, K.V.; Kirtaev, R.V.; Markeev, A.M.; Zablotskiy, A.V. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny (Russian Federation); Lebedinskii, Yu.Yu.; Matveyev, Yu.A.; Zenkevich, A.V. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoye shosse 31, 115409, Moscow (Russian Federation); Orlov, O.M. [Scientific Research Institute of Molecular Electronics and Plant ' ' Micron' ' , 124462, Zelenograd (Russian Federation)

    2015-04-01

    Atomic-layer deposition (ALD) technique in combination with in vacuo X-ray photoelectron spectroscopy (XPS) analysis has been successfully employed to obtain fully ALD-grown planar TiN/HfO{sub 2}/TiN metal-insulator-metal structures for resistive random access memory (ReRAM) memory elements. In vacuo XPS analysis of ALD-grown TiN/HfO{sub 2}/TiN stacks reveals the presence of the ultrathin oxidized layers consisting of TiON (∝0.5 nm) and TiO{sub 2} (∝0.6 nm) at the bottom TiN/HfO{sub 2} interface (i); the nonoxidized TiN at the top HfO{sub 2}/TiN interface (ii); the oxygen deficiency in the HfO{sub 2} layer does not exceed the XPS detection limit (iii). Electroformed ALD TiN/HfO{sub 2}/TiN stacks reveal both conventional bipolar and complementary types of resistive switching. In the complementary resistive switching regime, each programming sequence is terminated by a reset operation, leaving the TiN/HfO{sub 2}/TiN stack in a high-resistance state. The observed feature can avoid detrimental leaky paths during successive reading operation, which is useful in the passive ReRAM arrays without a selector element. The bipolar regime of resistive switching is found to reveal the gradual character of the SET and RESET switching processes. Long-term potentiation and depression tests performed on ALD-grown TiN/HfO{sub 2}/TiN stacks indicate that they can be used as electronic synapse devices for the implementation of emerging neuromorphic computation systems. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Potential radionuclide emissions from stacks on the Hanford Site, Part 2: Dose assessment methodology using portable low-resolution gamma spectroscoy

    International Nuclear Information System (INIS)

    Barnett, J.M.

    1994-07-01

    In September 1992, the Westinghouse Hanford Company began developing an in situ measurement method to assess gamma radiation emanating from high-efficiency particulate air filters using portable low-resolution gamma spectroscopy. The purpose of the new method was to assess radioactive exhaust stack air emissions from empirical data rather than from theoretical models and to determine the potential unabated dose to an offsite theoretical maximally exposed individual. In accordance with Title 40, Code of Federal Regulations, Part 61, Subpart H, ''National Emission Standards for Hazardous Air Pollutants'', stacks that have the potential to emit ≥ 0.1 mrem per year to the maximally exposed individual are considered ''major'' and must meet the continuous monitoring requirements. After the method was tested and verified, the US Environmental Protection Agency, Region 10, approved its use in June 1993. Of the 125 stacks operated by the Westinghouse Hanford Company, 22 were targeted for evaluation by this method; and 15 were assessed. The most significant,result from this study was the redesignation. of the T Plant main stack. The stack was assessed as being ''minor'', and it now only requires periodic confirmatory measurements and meets federally imposed sampling requirements

  12. Development and preliminary experimental study on micro-stacked insulator

    International Nuclear Information System (INIS)

    Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

    2009-01-01

    High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

  13. Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

    NARCIS (Netherlands)

    2005-01-01

    A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

  14. Performance improvement of charge-trap memory by using a stacked Zr_0_._4_6Si_0_._5_4O_2/Al_2O_3 charge-trapping layer

    International Nuclear Information System (INIS)

    Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage; Li, Rong

    2016-01-01

    The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr_0_._4_6Si_0_._5_4O_2/Al_2O_3 charge-trapping layer flanked by a SiO_2 tunneling oxide and an Al_2O_3 blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr_0_._4_6Si_0_._5_4O_2, Zr_0_._7_9Si_0_._2_1O_2, and Zr_0_._4_6Al_1_._0_8O_2_._5_4). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Measurements of proton energy spectra using a radiochromic film stack

    Science.gov (United States)

    Filkins, T. M.; Steidle, Jessica; Ellison, D. M.; Steidle, Jeffrey; Freeman, C. G.; Padalino, S. J.; Fiksel, G.; Regan, S. P.; Sangster, T. C.

    2014-10-01

    The energy spectrum of protons accelerated from the rear-side of a thin foil illuminated with ultra-intense laser light from the OMEGA EP laser system at the University of Rochester's Laboratory for Laser Energetics (LLE) was measured using a stack of radiochromic film (RCF). The film stack consisted of four layers of Gafchromic HD-V2 film and four layers of Gafchromic MD-V2-55 film. Aluminum foils of various thicknesses were placed between each piece of RCF in the stack. This arrangement allowed protons with energies of 30 MeV to reach the back layer of RCF in the stack. The stack was placed in the detector plane of a Thomson parabola ion energy (TPIE) spectrometer. Each piece of film in the stack was scanned using a commercially available flat-bed scanner (Epson 10000XL). The resulting optical density was converted into proton fluence using an absolute calibration of the RCF obtained at the SUNY Geneseo 1.7 MV Pelletron accelerator laboratory. In these calibration measurements, the sensitivity of the radiochromic film was measured using monoenergetic protons produced by the accelerator. Details of the analysis procedure and the resulting proton energy spectra will be presented. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

  16. Stacked white OLED having separate red, green and blue sub-elements

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

    2014-07-01

    The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

  17. Stacking stability of MoS2 bilayer: An ab initio study

    International Nuclear Information System (INIS)

    Tao Peng; Guo Huai-Hong; Yang Teng; Zhang Zhi-Dong

    2014-01-01

    The study of the stacking stability of bilayer MoS 2 is essential since a bilayer has exhibited advantages over single layer MoS 2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS 2 , and (especially) the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band (CI-NEB) method. Among five typical stacking orders, which can be categorized into two kinds (I: AA, AB and II: AA', AB', A'B), we found that stacking orders with Mo and S superposing from both layers, such as AA' and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/(ucGPa) from AA' to AB', compared to 0.1 eV/(ucGPa) from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA'. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS 2 on nanoelectronic applications. (condensed matter: structural, mechanical, and thermal properties)

  18. Potential radionuclide emissions from stacks on the Hanford site, Part 2: Dose assessment methodology using portable low-resolution gamma spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, J.M. [Westinghouse Hanford Company, Richland, WA (United States)

    1995-02-01

    In September 1992, the Westinghouse Hanford Company began developing an in situ measurement method to assess gamma radiation emanating from high-efficiency particulate air filters using portable low-resolution gamma spectroscopy. The purpose of the new method was to assess radioactive exhaust stack air emissions from empirical data rather than from theoretical models and to determine the potential unabated dose to an offsite theoretical maximally exposed individual. In accordance with Title 40, Code of Federal Regulations, Part 61, Subpart H, {open_quotes}National Emission Standards for Hazardous Air Pollutants{close_quotes}, stacks that have the potential to emit {ge} 1 {mu}Sv y{sup {minus}1} (0.1 mrem y{sup {minus}1}) to the maximally exposed individual are considered {open_quotes}major{close_quotes} and must meet the continuous monitoring requirements. After the method was tested and verified, the U.S. Environmental Protection Agency, Region 10, approved its use in June 1993. Of the 125 stacks operated by the Westinghouse Hanford Company, 22 were targeted for evaluation by this method, and 15 were assessed. (The method could not be applied at seven stacks because of excessive background radiation or because no gamma emitting particles appear in the emission stream.) The most significant result from this study was the redesignation of the T Plant main stack. The stack was assessed as being {open_quotes}minor{close_quotes}, and it now only requires periodic confirmatory measurements and meets federally imposed sampling requirements.

  19. Prediction of residual stress distribution in multi-stacked thin film by curvature measurement and iterative FEA

    International Nuclear Information System (INIS)

    Choi, Hyeon Chang; Park, Jun Hyub

    2005-01-01

    In this study, residual stress distribution in multi-stacked film by MEMS (Micro-Electro Mechanical System) process is predicted using Finite Element Method (FEM). We develop a finite element program for REsidual Stress Analysis (RESA) in multi-stacked film. The RESA predicts the distribution of residual stress field in multi-stacked film. Curvatures of multi-stacked film and single layers which consist of the multi-stacked film are used as the input to the RESA. To measure those curvatures is easier than to measure a distribution of residual stress. To verify the RESA, mean stresses and stress gradients of single and multilayers are measured. The mean stresses are calculated from curvatures of deposited wafer by using Stoney's equation. The stress gradients are calculated from the vertical deflection at the end of cantilever beam. To measure the mean stress of each layer in multi-stacked film, we measure the curvature of wafer with the film after etching layer by layer in multi-stacked film

  20. Glassy carbon based supercapacitor stacks

    Energy Technology Data Exchange (ETDEWEB)

    Baertsch, M; Braun, A; Koetz, R; Haas, O [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-06-01

    Considerable effort is being made to develop electrochemical double layer capacitors (EDLC) that store relatively large quantities of electrical energy and possess at the same time a high power density. Our previous work has shown that glassy carbon is suitable as a material for capacitor electrodes concerning low resistance and high capacity requirements. We present the development of bipolar electrochemical glassy carbon capacitor stacks of up to 3 V. Bipolar stacks are an efficient way to meet the high voltage and high power density requirements for traction applications. Impedance and cyclic voltammogram measurements are reported here and show the frequency response of a 1, 2, and 3 V stack. (author) 3 figs., 1 ref..

  1. Image transfer by cascaded stack of photonic crystal and air layers

    NARCIS (Netherlands)

    Shen, C.; Michielsen, K.; Raedt, H. De

    2006-01-01

    We demonstrate image transfer by a cascaded stack consisting of two and three triangular-lattice photonic crystal slabs separated by air. The quality of the image transfered by the stack is sensitive to the air/photonic crystal interface termination and the frequency. Depending on the frequency and

  2. Tetradymite layer assisted heteroepitaxial growth and applications

    Science.gov (United States)

    Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

    2017-08-01

    A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

  3. Modelling the protocol stack in NCS with deterministic and stochastic petri net

    Science.gov (United States)

    Hui, Chen; Chunjie, Zhou; Weifeng, Zhu

    2011-06-01

    Protocol stack is the basis of the networked control systems (NCS). Full or partial reconfiguration of protocol stack offers both optimised communication service and system performance. Nowadays, field testing is unrealistic to determine the performance of reconfigurable protocol stack; and the Petri net formal description technique offers the best combination of intuitive representation, tool support and analytical capabilities. Traditionally, separation between the different layers of the OSI model has been a common practice. Nevertheless, such a layered modelling analysis framework of protocol stack leads to the lack of global optimisation for protocol reconfiguration. In this article, we proposed a general modelling analysis framework for NCS based on the cross-layer concept, which is to establish an efficiency system scheduling model through abstracting the time constraint, the task interrelation, the processor and the bus sub-models from upper and lower layers (application, data link and physical layer). Cross-layer design can help to overcome the inadequacy of global optimisation based on information sharing between protocol layers. To illustrate the framework, we take controller area network (CAN) as a case study. The simulation results of deterministic and stochastic Petri-net (DSPN) model can help us adjust the message scheduling scheme and obtain better system performance.

  4. Stacking Faults and Polytypes for Layered Double Hydroxides: What Can We Learn from Simulated and Experimental X-ray Powder Diffraction Data?

    Science.gov (United States)

    Sławiński, Wojciech A; Sjåstad, Anja Olafsen; Fjellvåg, Helmer

    2016-12-19

    Layered double hydroxides (LDH) are a broad group of widely studied materials. The layered character of those materials and their high flexibility for accommodating different metals and anions make them technologically interesting. The general formula for the LDH compound is [M 1-x II M x III (OH) 2 ][A n- ] x/n ·mH 2 O, where M II is a divalent metal cation which can be substituted by M III trivalent cation, and A n- is a charge compensating anion located between positively charged layers. In this paper we present a comprehensive study on possible structural disorder in LDH. We show how X-ray powder diffraction (XRPD) can be used to reveal important features of the LDH crystal structure such as stacking faults, random interlayer shifts, anion-molecule orientation, crystal water content, distribution of interlayer distances, and also LDH slab thickness. All calculations were performed using the Discus package, which gives a better flexibility in defining stacking fault sequences, simulating and refining XRPD patterns, relative to DIFFaX, DIFFaX+, and FAULTS. Finally, we show how the modeling can be applied to two LDH samples: Ni 0.67 Cr 0.33 (OH) 2 (CO 3 ) 0.16 ·mH 2 O (3D structure) and Mg 0.67 Al 0.33 (OH) 2 (NO 3 ) 0.33 (2D layered structure).

  5. Stacked Heterogeneous Neural Networks for Time Series Forecasting

    Directory of Open Access Journals (Sweden)

    Florin Leon

    2010-01-01

    Full Text Available A hybrid model for time series forecasting is proposed. It is a stacked neural network, containing one normal multilayer perceptron with bipolar sigmoid activation functions, and the other with an exponential activation function in the output layer. As shown by the case studies, the proposed stacked hybrid neural model performs well on a variety of benchmark time series. The combination of weights of the two stack components that leads to optimal performance is also studied.

  6. Ta thickness-dependent perpendicular magnetic anisotropy features in Ta/CoFeB/MgO/W free layer stacks

    Energy Technology Data Exchange (ETDEWEB)

    Yang, SeungMo; Lee, JaBin; An, GwangGuk [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, JaeHong [Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, WooSeong [Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, JinPyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-07-31

    We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotropy in Ta/CoFeB/MgO/W stacks. It is believed that thermal stability based on Ta underlay is associated with thermally-activated Ta atom diffusion during annealing. The difference in Ta thickness-dependent diffusion behaviors was confirmed with X-ray photoelectron spectroscopy analysis. Along with a feasible Ta thickness model, our observations suggest that an appropriate seed layer choice is needed for high temperature annealing stability, a critical issue in the memory industry. - Highlights: • We observed changes in the diffusion behavior with regard to Ta seed layer thickness. • It was observed that a thinner Ta seed layer induced more annealing-stable features. • However, ultra-thin (0.75 nm) Ta shows unstable characteristics about the annealing process. • It was possibly due to a rugged interface of the Ta layer by the island growth process.

  7. Influence of the stacking sequence of layers on the mechanical behavior of polymeric composite cylinders; Influencia da configuracao de bobinagem no comportamento mecanico de cilindros de composito polimerico

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, Osni de

    2006-07-01

    This work evaluated experimentally the influence of the stacking sequence of layers symmetrical and asymmetrical on the mechanical behavior of polymeric composite cylinders. For so much, two open-ended cylinders groups were manufactured by filament winding process, which had different stacking sequence related to the laminate midplane, characterizing symmetrical and asymmetrical laminates. The composite cylinders were made with epoxy matrix and carbon fiber as reinforcement. For evaluation of the mechanical strength, the cylinders were tested hydrostatically, which consisted of internal pressurization in a hydrostatic device through the utilization of a fluid until the cylinders burst. Additionally, were compared the strains and failure modes between the cylinders groups. The utilization of a finite element program allowed to conclude that this tool, very used in design, does not get to identify tensions in the fiber direction in each composite layer, as well as interlaminar shear stress, that appears in the cylinders with asymmetrical stacking sequence. The tests results showed that the stacking sequence had influence in the mechanical behavior of the composite cylinders, favoring the symmetrical construction. (author)

  8. Mechanical testing of adherence of stacked layers in tubular geometry

    Energy Technology Data Exchange (ETDEWEB)

    Correia, L.A.; Schuring, E.W.; Van Delft, Y.C. [ECN Energy Efficiency in the Industry, Petten (Netherlands)

    2007-09-15

    For the development of new molecular separation technologies strong robust tubular membrane systems are required. The fragile membranes, however, need a strong defect free support such as a porous asymmetric ceramic tube. Mechanical failure of these ceramic membrane systems during manufacturing and operation is mainly caused by delamination of the stacked layers. Therefore development is focused on improving the adherence. As no standard mechanical test for tubular samples is available yet, a new tensile test was developed to facilitate the current research. The most important components in the new equipment is a test tool with a curvature matching that of the test sample and a sample casing that align and guide the test tool during the tensile test. With this tensile test the manufacturing procedure for the ECN standard tubular {alpha}-alumina support was optimized. Firing the asymmetric support at 1300C resulted in the highest mechanical strength for the support system with cohesive fracture in the support tube. With the test developed the process condition could be identified where the material of the support tube is the weakest link in the support system.

  9. Band Gap Grading of Stacked Cu(In,Ga)S{sub 2} Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Seonghyun; Sohn, So Hyeong; Shim, Hyeong Seop; Park, Seung Min; Song, Jae Kyu [Kyung Hee University, Seoul (Korea, Republic of); Min, Byoung Koun [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2016-01-15

    The band gap energy of CIGS, which depends on the composition variation and strain effect, can influence the collection and recombination of photocarriers. The solar cell efficiency is improved by the graded band gap in the absorber layer due to the enhanced carrier collection and the reduced carrier recombination. In our previous study, the photovoltaic performance of solar cells was affected by the stacking combination of layers, where the solar cell with dense-bottom and porous-top layers showed better performance than that with a reversely stacked structure. We studied the stacking effect of CIGS thin films. The stacking did not change E {sub g} of each layer, which led to the double grading of E {sub g} along the depth of the stacked films, mainly due to the difference in E {sub g} between the dense and porous layers. The higher degree of the grading in A+B+A improved J {sub sc}. However, the higher density of the defect states in A+B+A reduced V {sub oc}, which was inferred by the short lifetime of the carriers and the broad bandwidth of photoluminescence. Overall, the efficiency of A+B+A was only slightly improved compared to that of B+A.

  10. High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

    International Nuclear Information System (INIS)

    Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

    2009-01-01

    Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

  11. Enhanced optical fields in a multilayered microsphere with a quasiperiodic spherical stack

    International Nuclear Information System (INIS)

    Burlak, Gennadiy N

    2007-01-01

    Radiation of a nanosource placed in a microsphere with a quasiperiodic subwavelength spherical stack is studied. The spectral evolution of transmittance at the change of the thickness of two-layer blocks constructed following the Fibonacci sequence is investigated. When the number of layers (Fibonacci order) increases the structure of the spectrum acquires a fractal form. Our calculations show a rising strong field peak, when the ratio of width of layers in two-layer blocks of the stack is close to the golden mean value

  12. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  13. Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

    2010-01-01

    Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

  14. Stacking faults and phase changes in Mg-doped InGaN grown on Si

    International Nuclear Information System (INIS)

    Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

    2009-01-01

    We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    International Nuclear Information System (INIS)

    Pepe, G.P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

    2004-01-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed

  16. UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-08-28

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

  17. Performance improvement of charge-trap memory by using a stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage [College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000 (China); Li, Rong [School of Mathematics and Statistics, Anyang Normal University, Anyang 455000 (China)

    2016-11-15

    The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer flanked by a SiO{sub 2} tunneling oxide and an Al{sub 2}O{sub 3} blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr{sub 0.46}Si{sub 0.54}O{sub 2}, Zr{sub 0.79}Si{sub 0.21}O{sub 2}, and Zr{sub 0.46}Al{sub 1.08}O{sub 2.54}). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Correlated lateral phase separations in stacks of lipid membranes

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Takuma, E-mail: hoshino-takuma@ed.tmu.ac.jp [Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Tokyo 192-0397 (Japan); Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 69978 (Israel); Kavli Institute for Theoretical Physics China, CAS, Beijing 100190 (China); Komura, Shigeyuki, E-mail: komura@tmu.ac.jp [Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Tokyo 192-0397 (Japan); Kavli Institute for Theoretical Physics China, CAS, Beijing 100190 (China); Andelman, David, E-mail: andelman@post.tau.ac.il [Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 69978 (Israel); Kavli Institute for Theoretical Physics China, CAS, Beijing 100190 (China)

    2015-12-28

    Motivated by the experimental study of Tayebi et al. [Nat. Mater. 11, 1074 (2012)] on phase separation of stacked multi-component lipid bilayers, we propose a model composed of stacked two-dimensional Ising spins. We study both its static and dynamical features using Monte Carlo simulations with Kawasaki spin exchange dynamics that conserves the order parameter. We show that at thermodynamical equilibrium, due to strong inter-layer correlations, the system forms a continuous columnar structure for any finite interaction across adjacent layers. Furthermore, the phase separation shows a faster dynamics as the inter-layer interaction is increased. This temporal behavior is mainly due to an effective deeper temperature quench because of the larger value of the critical temperature, T{sub c}, for larger inter-layer interaction. When the temperature ratio, T/T{sub c}, is kept fixed, the temporal growth exponent does not increase and even slightly decreases as a function of the increased inter-layer interaction.

  19. Stacked multilayers of alternating reduced graphene oxide and carbon nanotubes for planar supercapacitors

    Science.gov (United States)

    Moon, Geon Dae; Joo, Ji Bong; Yin, Yadong

    2013-11-01

    A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production.A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production. Electronic supplementary information (ESI) available: Experimental details, SEM and TEM images and additional electrochemical data. See DOI: 10.1039/c3nr04339h

  20. Development of an Integrated Polymer Microfluidic Stack

    International Nuclear Information System (INIS)

    Datta, Proyag; Hammacher, Jens; Pease, Mark; Gurung, Sitanshu; Goettert, Jost

    2006-01-01

    Microfluidic is a field of considerable interest. While significant research has been carried out to develop microfluidic components, very little has been done to integrate the components into a complete working system. We present a flexible modular system platform that addresses the requirements of a complete microfluidic system. A microfluidic stack system is demonstrated with the layers of the stack being modular for specific functions. The stack and accompanying infrastructure provides an attractive platform for users to transition their design concepts into a working microfluidic system quickly with very little effort. The concept is demonstrated by using the system to carry out a chemilumiscence experiment. Details regarding the fabrication, assembly and experimental methods are presented

  1. Theoretical Analysis of the Dynamic Properties of a 2-2 Cement-Based Piezoelectric Dual-Layer Stacked Sensor under Impact Load.

    Science.gov (United States)

    Zhang, Taotao; Liao, Yangchao; Zhang, Keping; Chen, Jun

    2017-05-04

    Cement-based piezoelectric materials are widely used due to the fact that compared with common smart materials, they overcome the defects of structure-incompatibility and frequency inconsistency with a concrete structure. However, the present understanding of the mechanical behavior of cement-based piezoelectric smart materials under impact load is still limited. The dynamic characteristics under impact load are of importance, for example, for studying the anti-collision properties of engineering structures and aircraft takeoff-landing safety. Therefore, in this paper, an analytical model was proposed to investigate the dynamic properties of a 2-2 cement-based piezoelectric dual-layer stacked sensor under impact load based on the piezoelectric effect. Theoretical solutions are obtained by utilizing the variable separation and Duhamel integral method. To simulate the impact load and verify the theory, three types of loads, including atransient step load, isosceles triangle load and haversine wave load, are considered and the comparisons between the theoretical results, Li's results and numerical results are presented by using the control variate method and good agreement is found. Furthermore, the influences of several parameters were discussed and other conclusions about this sensor are also given. This should prove very helpful for the design and optimization of the 2-2 cement-based piezoelectric dual-layer stacked sensor in engineering.

  2. Open stack thermal battery tests

    Energy Technology Data Exchange (ETDEWEB)

    Long, Kevin N. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Roberts, Christine C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Grillet, Anne M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Headley, Alexander J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Fenton, Kyle [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wong, Dennis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ingersoll, David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-04-17

    We present selected results from a series of Open Stack thermal battery tests performed in FY14 and FY15 and discuss our findings. These tests were meant to provide validation data for the comprehensive thermal battery simulation tools currently under development in Sierra/Aria under known conditions compared with as-manufactured batteries. We are able to satisfy this original objective in the present study for some test conditions. Measurements from each test include: nominal stack pressure (axial stress) vs. time in the cold state and during battery ignition, battery voltage vs. time against a prescribed current draw with periodic pulses, and images transverse to the battery axis from which cell displacements are computed. Six battery configurations were evaluated: 3, 5, and 10 cell stacks sandwiched between 4 layers of the materials used for axial thermal insulation, either Fiberfrax Board or MinK. In addition to the results from 3, 5, and 10 cell stacks with either in-line Fiberfrax Board or MinK insulation, a series of cell-free “control” tests were performed that show the inherent settling and stress relaxation based on the interaction between the insulation and heat pellets alone.

  3. Development and characterization of a three-dimensional radiochromic film stack dosimeter for megavoltage photon beam dosimetry.

    Science.gov (United States)

    McCaw, Travis J; Micka, John A; DeWerd, Larry A

    2014-05-01

    Three-dimensional (3D) dosimeters are particularly useful for verifying the commissioning of treatment planning and delivery systems, especially with the ever-increasing implementation of complex and conformal radiotherapy techniques such as volumetric modulated arc therapy. However, currently available 3D dosimeters require extensive experience to prepare and analyze, and are subject to large measurement uncertainties. This work aims to provide a more readily implementable 3D dosimeter with the development and characterization of a radiochromic film stack dosimeter for megavoltage photon beam dosimetry. A film stack dosimeter was developed using Gafchromic(®) EBT2 films. The dosimeter consists of 22 films separated by 1 mm-thick spacers. A Virtual Water™ phantom was created that maintains the radial film alignment within a maximum uncertainty of 0.3 mm. The film stack dosimeter was characterized using simulations and measurements of 6 MV fields. The absorbed-dose energy dependence and orientation dependence of the film stack dosimeter were investigated using Monte Carlo simulations. The water equivalence of the dosimeter was determined by comparing percentage-depth-dose (PDD) profiles measured with the film stack dosimeter and simulated using Monte Carlo methods. Film stack dosimeter measurements were verified with thermoluminescent dosimeter (TLD) microcube measurements. The film stack dosimeter was also used to verify the delivery of an intensity-modulated radiation therapy (IMRT) procedure. The absorbed-dose energy response of EBT2 film differs less than 1.5% between the calibration and film stack dosimeter geometries for a 6 MV spectrum. Over a series of beam angles ranging from normal incidence to parallel incidence, the overall variation in the response of the film stack dosimeter is within a range of 2.5%. Relative to the response to a normally incident beam, the film stack dosimeter exhibits a 1% under-response when the beam axis is parallel to the film

  4. LAB3 Cosmic Ray Test Stand Analysis of Steel Stack Supports

    International Nuclear Information System (INIS)

    Cease, H.

    1998-01-01

    A cosmic ray test stand is being constructed at Lab 3. The stand consists of two stacks of steel plates one resting on top of the other. The top stack is composed of 6 plates of steel making an overall stack size of 34.5-inch x 40-inch x 99-inch. The bottom stack also has 6 layers of plate making an overall size of approximately 49.5-inch x 82-inch x 99-inch. The bottom stack is supported with three support legs. See drawing 3823.000ME-900428 for the individual plate orientation. The minimum support leg size and necessary welds between plates are determined.

  5. Analysis and prediction of stacking sequences in intercalated lamellar vanadium phosphates

    Energy Technology Data Exchange (ETDEWEB)

    Gautier, Romain [Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS - Ecole Nationale Superieure de Chimie de Rennes (France); Centre Nationale de la Recherche Scientifique (CNRS), Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes (France); Fourre, Yoann; Furet, Eric; Gautier, Regis; Le Fur, Eric [Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS - Ecole Nationale Superieure de Chimie de Rennes (France)

    2015-04-15

    An approach is presented that enables the analysis and prediction of stacking sequences in intercalated lamellar vanadium phosphates. A comparison of previously reported vanadium phosphates reveals two modes of intercalation: (i) 3d transition metal ions intercalated between VOPO{sub 4} layers and (ii) alkali/alkaline earth metal ions between VOPO{sub 4}.H{sub 2}O layers. Both intercalations were investigated using DFT calculations in order to understand the relative shifts of the vanadium phosphate layers. These calculations in addition to an analysis of the stacking sequences in previously reported materials enable the prediction of the crystal structures of M{sub x}(VOPO{sub 4}).yH{sub 2}O (M = Cs{sup +}, Cd{sup 2+} and Sn{sup 2+}). Experimental realization and structural determination of Cd(VOPO{sub 4}){sub 2}.4H{sub 2}O by single-crystal X-ray diffraction confirmed the predicted stacking sequences. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

    Directory of Open Access Journals (Sweden)

    Y. S. Zhi

    2016-01-01

    Full Text Available Both unipolar resistive switching (URS and bipolar resistive switching (BRS behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.

  7. Multi-Stacked Supported Lipid Bilayer Micropatterning through Polymer Stencil Lift-Off

    Directory of Open Access Journals (Sweden)

    Yujie Zhu

    2015-08-01

    Full Text Available Complex multi-lamellar structures play a critical role in biological systems, where they are present as lamellar bodies, and as part of biological assemblies that control energy transduction processes. Multi-lamellar lipid layers not only provide interesting systems for fundamental research on membrane structure and bilayer-associated polypeptides, but can also serve as components in bioinspired materials or devices. Although the ability to pattern stacked lipid bilayers at the micron scale is of importance for these purposes, limited work has been done in developing such patterning techniques. Here, we present a simple and direct approach to pattern stacked supported lipid bilayers (SLBs using polymer stencil lift-off and the electrostatic interactions between cationic and anionic lipids. Both homogeneous and phase-segregated stacked SLB patterns were produced, demonstrating that the stacked lipid bilayers retain lateral diffusivity. We demonstrate patterned SLB stacks of up to four bilayers, where fluorescence resonance energy transfer (FRET and quenching was used to probe the interactions between lipid bilayers. Furthermore, the study of lipid phase behaviour showed that gel phase domains align between adjacent layers. The proposed stacked SLB pattern platform provides a robust model for studying lipid behaviour with a controlled number of bilayers, and an attractive means towards building functional bioinspired materials or devices.

  8. Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

    International Nuclear Information System (INIS)

    Kijima, Toshiyuki; Nakase, Yoshiaki

    1993-01-01

    Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

  9. Levitation characteristics of HTS tape stacks

    Energy Technology Data Exchange (ETDEWEB)

    Pokrovskiy, S. V.; Ermolaev, Y. S.; Rudnev, I. A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-03-15

    Due to the considerable development of the technology of second generation high-temperature superconductors and a significant improvement in their mechanical and transport properties in the last few years it is possible to use HTS tapes in the magnetic levitation systems. The advantages of tapes on a metal substrate as compared with bulk YBCO material primarily in the strength, and the possibility of optimizing the convenience of manufacturing elements of levitation systems. In the present report presents the results of the magnetic levitation force measurements between the stack of HTS tapes containing of tapes and NdFeB permanent magnet in the FC and ZFC regimes. It was found a non- linear dependence of the levitation force from the height of the array of stack in both modes: linear growth at small thickness gives way to flattening and constant at large number of tapes in the stack. Established that the levitation force of stacks comparable to that of bulk samples. The numerical calculations using finite element method showed that without the screening of the applied field the levitation force of the bulk superconductor and the layered superconductor stack with a critical current of tapes increased by the filling factor is exactly the same, and taking into account the screening force slightly different.

  10. Theory and experiment on electromagnetic-wave-propagation velocities in stacked superconducting tunnel structures

    DEFF Research Database (Denmark)

    Sakai, S.; Ustinov, A. V.; Kohlstedt, H.

    1994-01-01

    Characteristic velocities of the electromagnetic waves propagating in vertically stacked Josephson transmission are theoretically discussed. An equation for solving n velocities of the waves in an n Josephson-junction stack is derived. The solutions of two- and threefold stacks are especially...... focused on. Furthermore, under the assumption that all parameters of the layers are equal, analytic solutions for a generic N-fold stack are presented. The velocities of the waves in two- and three-junction stacks by Nb-Al-AlOx-Nb systems are experimentally obtained by measuring the cavity resonance...

  11. Analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors

    Science.gov (United States)

    Xu, Hui Fang; Sun, Wen; Han, Xin Feng

    2018-06-01

    An analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors (HS-TFETs) is presented for the first time, where hetero stacked materials are composed of two different bandgaps. The bandgap of the underlying layer is smaller than that of the upper layer. Under different device parameters (upper layer thickness, underlying layer thickness, and hetero stacked materials) and temperature, the validity of the model is demonstrated by the agreement of its results with the simulation results. Moreover, the results show that the HS-TFETs can obtain predominant performance with relatively slow changes of subthreshold swing (SS) over a wide drain current range, steep average subthreshold swing, high on-state current, and large on–off state current ratio.

  12. Cross-stacked carbon nanotube film as an additional built-in current collector and adsorption layer for high-performance lithium sulfur batteries.

    Science.gov (United States)

    Sun, Li; Kong, Weibang; Li, Mengya; Wu, Hengcai; Jiang, Kaili; Li, Qunqing; Zhang, Yihe; Wang, Jiaping; Fan, Shoushan

    2016-02-19

    Cross-stacked carbon nanotube (CNT) film is proposed as an additional built-in current collector and adsorption layer in sulfur cathodes for advanced lithium sulfur (Li-S) batteries. On one hand, the CNT film with high conductivity, microstructural rough surface, high flexibility and mechanical durability retains stable and direct electronic contact with the sulfur cathode materials, therefore decreasing internal resistivity and suppressing polarization of the cathode. On the other hand, the highly porous structure and the high surface area of the CNT film provide abundant adsorption points to support and confine sulfur cathode materials, alleviate their aggregation and promote high sulfur utilization. Moreover, the lightweight and compact structure of the CNT film adds no extra weight or volume to the sulfur cathode, benefitting the improvement of energy densities. Based on these characteristics, the sulfur cathode with a 100-layer cross-stacked CNT film presents excellent rate performances with capacities of 986, 922 and 874 mAh g(-1) at cycling rates of 0.2C, 0.5C and 1C for sulfur loading of 60 wt%, corresponding to an improvement of 52%, 109% and 146% compared to that without a CNT film. Promising cycling performances are also demonstrated, offering great potential for scaled-up production of sulfur cathodes for Li-S batteries.

  13. The Effect of Customized Woven and Stacked Layer Orientation on Tensile and Flexural Properties of Woven Kenaf Fibre Reinforced Epoxy Composites

    Directory of Open Access Journals (Sweden)

    A. Hamdan

    2016-01-01

    Full Text Available The synthetic fibres have created some issues including risk of inhalation during fabrication process, renewability, biodegradability, and recyclability in composites industry. The usage of biocomposites as a replacement to synthetic fibres is beginning to be widespread. However, it is noted that lesser attention has been devoted to evaluating the mechanical properties of woven kenaf composites at various woven and stacked layer orientation. Thus, the research objective is to identify the effect of woven and stacked layer orientation on tensile and flexural properties of kenaf composites. Two types of fibre orientation are employed; type A contains a higher yarn density and type B contains a low yarn density. The tensile and flexural tests are conducted to analyze the mechanical properties of woven kenaf fibre composites and compare them to random chopped kenaf composites. The fracture interface between fibre and matrix epoxy is further investigated via scanning electron microscope. Type A kenaf improved up to 199% and 177% as compared to random chopped kenaf for flexural strength and tensile strength, respectively. Scanning electron microscopy analysis shows that resin matrix is properly induced into kenaf fibre gap hence giving additional strength to woven kenaf as compared to random chopped kenaf.

  14. Theoretical Analysis of the Dynamic Properties of a 2-2 Cement-Based Piezoelectric Dual-Layer Stacked Sensor under Impact Load

    Directory of Open Access Journals (Sweden)

    Taotao Zhang

    2017-05-01

    Full Text Available Cement-based piezoelectric materials are widely used due to the fact that compared with common smart materials, they overcome the defects of structure-incompatibility and frequency inconsistency with a concrete structure. However, the present understanding of the mechanical behavior of cement-based piezoelectric smart materials under impact load is still limited. The dynamic characteristics under impact load are of importance, for example, for studying the anti-collision properties of engineering structures and aircraft takeoff-landing safety. Therefore, in this paper, an analytical model was proposed to investigate the dynamic properties of a 2-2 cement-based piezoelectric dual-layer stacked sensor under impact load based on the piezoelectric effect. Theoretical solutions are obtained by utilizing the variable separation and Duhamel integral method. To simulate the impact load and verify the theory, three types of loads, including atransient step load, isosceles triangle load and haversine wave load, are considered and the comparisons between the theoretical results, Li’s results and numerical results are presented by using the control variate method and good agreement is found. Furthermore, the influences of several parameters were discussed and other conclusions about this sensor are also given. This should prove very helpful for the design and optimization of the 2-2 cement-based piezoelectric dual-layer stacked sensor in engineering.

  15. Maturing of SOFC cell and stack production technology and preparation for demonstration of SOFC stacks. Part 2

    Energy Technology Data Exchange (ETDEWEB)

    2006-07-01

    The TOFC/Riso pilot plant production facility for the manufacture of anode-supported cells has been further up-scaled with an automated continuous spraying process and an extra sintering capacity resulting in production capacity exceeding 15,000 standard cells (12x12 cm2) in 2006 with a success rate of about 85% in the cell production. All processing steps such as tape-casting, spraying, screen-printing and atmospheric air sintering in the cell production have been selected on condition that up-scaling and cost effective, flexible, industrial mass production are feasible. The standard cell size is currently being increased to 18x18 cm2, and 150 cells of this size have been produced in 2006 for our further stack development. To improve quality and lower production cost, a new screen printing line is under establishment. TOFC's stack design is an ultra compact multilayer assembly of cells (including contact layers), metallic interconnects, spacer frames and glass seals. The compactness ensures minimized material consumption and low cost. Standard stacks with cross flow configuration contains 75 cells (12x12cm2) delivering about 1.2 kW at optimal operation conditions with pre-reformed NG as fuel. Stable performance has been demonstrated for 500-1000 hours. Significantly improved materials, especially concerning the metallic interconnect and the coatings have been introduced during the last year. Small stacks (5-10 cells) exhibit no detectable stack degradation using our latest cells and stack materials during test periods of 500-1000 hours. Larger stacks (50-75 cells) suffer from mal-distribution of gas and air inside the stacks, gas leakage, gas cross-over, pressure drop, and a certain loss of internal electrical contact during operation cycles. Measures have been taken to find solutions during the following development work. The stack production facilities have been improved and up-scaled. In 2006, 5 standard stacks have been assembled and burned in based on

  16. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  17. Numerical analysis of ac loss in bifilar stacks and coils of ion beam assisted deposition YBCO coated conductors

    International Nuclear Information System (INIS)

    Nguyen, Doan N.; Ashworth, Stephen P.; Willis, Jeffrey O.

    2009-01-01

    In this paper we present a finite element model using the commercial COMSOL software package for calculating the ac loss in bifilar stacks of high temperature superconducting tape. In the model, the current-voltage relationship characterizing the superconducting properties is assumed to follow a power law. The calculations were performed for infinite bifilar stacks with different values of layer-to-layer separation D. With appropriate settings for the boundary conditions, the numerical results agree well with the analytical data obtained from a recently proposed model [J. R. Clem, Phys. Rev. B 77, 134506 (2008)]. The numerical approach was also used to investigate the end effects in a bifilar stack to answer the following question: how many layers away from the end of a stack are required before the environment of a given layer is identical to that in an infinite stack? We find that the answer to this question depends strongly on the value of D. Based on this study, a model for calculating the ac loss in bifilar noninductively wound coils with a finite number of turns is proposed

  18. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    Science.gov (United States)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-02-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

  19. The Santa Quiteria project - an environmental impact assessment of its phosphogypsum stack

    International Nuclear Information System (INIS)

    Reis, Rocio G. dos; Lauria, Dejanira da Costa

    2011-01-01

    The Santa Quiteria Project is located in Ceara state, Brazil. Actually, it is the biggest Brazilian uranium mine project. A peculiarity of this project is the association of uranium with phosphate and the mining and processing of both together by two enterprises. A private company will be responsible for the production of phosphoric acid and a state owned company will be responsible for the production yellow cake. At full capacity, the plant will generate 10% of Brazil's total annual phosphoric acid production and 1,500 tons of yellow cake per year. The reaction, by which phosphoric acid is produced, generates phosphogypsum (PG) as a by-product. The ratio of phosphogypsum to phosphoric acid is around 5 to 1. After all the phosphate has been extracted and processed, it is expected that some 37 million tons of phosphogypsum with 13 Bq/g of radium 226 will be produced. Aiming to assess the potential radioactive impact of this PG stack on the workers and surrounding inhabitants, a generic assessment was performed by RESRAD offsite and onsite codes. A hypothetical farmer scenario was used to calculate potential dose out of the project boundary and over the stack piles, after the shutdown of the project. The annual exposure dose of workers according to the progress of processing was also evaluated. In conservative approach the potential public dose was estimated as 2.5 mSv/y. This study identified the rainfall erosion index, the geometric shape of the PG stack and the fish consumption as parameters where an improvement of information and understanding could improve the quality of the dose assessment. The worker dose estimation stressed the need for action plan to mitigate worker exposures on the stack. In addition, the onsite public dose pointed out the importance of a planning for remediating the area after the shutdown of the plant, in order to assure that public and environment health will not be affected by the presence of the PG stack. (author)

  20. Non-destructive spatial characterization of buried interfaces in multilayer stacks via two color picosecond acoustics

    Science.gov (United States)

    Faria, Jorge C. D.; Garnier, Philippe; Devos, Arnaud

    2017-12-01

    We demonstrate the ability to construct wide-area spatial mappings of buried interfaces in thin film stacks in a non-destructive manner using two color picosecond acoustics. Along with the extraction of layer thicknesses and sound velocities from acoustic signals, the morphological information presented is a powerful demonstration of phonon imaging as a metrological tool. For a series of heterogeneous (polymer, metal, and semiconductor) thin film stacks that have been treated with a chemical procedure known to alter layer properties, the spatial mappings reveal changes to interior thicknesses and chemically modified surface features without the need to remove uppermost layers. These results compare well to atomic force microscopy scans showing that the technique provides a significant advantage to current characterization methods for industrially important device stacks.

  1. Development of all chemical solution derived Ce0.9La0.1O2−y/Gd2Zr2O7 buffer layer stack for coated conductors: influence of the post-annealing process on surface crystallinity

    International Nuclear Information System (INIS)

    Zhao, Y; Li, X-F; He, D; Andersen, N H; Grivel, J-C; Khoryushin, A; Hansen, J B

    2012-01-01

    Preparation and characterization of a biaxially textured Gd 2 Zr 2 O 7 and Ce 0.9 La 0.1 O 2−y (CLO, cap)/Gd 2 Zr 2 O 7 (GZO, barrier) buffer layer stack by the metal–organic deposition route are reported. YBa 2 Cu 3 O 7−d (YBCO) superconductor films were deposited by the pulsed-laser deposition (PLD) technique to assess the efficiency of such a novel buffer layer stack. Biaxial texture quality and morphology of the buffer layers and the YBCO superconductor films were fully characterized. The surface crystallinity of the buffer layers is studied by the electron backscatter diffraction technique. It is revealed that post-annealing GZO films in 2% H 2 in Ar is an effective way to improve the surface crystallinity. As a result, a highly textured CLO film can grow directly on the GZO film at a lower crystallization temperature. The critical current density of a YBCO PLD film is higher than 1 MA cm −2 (77 K, in self-field), demonstrating that the novel CLO/GZO stack is very promising for further development of low cost buffer layer architectures for coated conductors.

  2. Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics.

    Science.gov (United States)

    Zhang, Liangliang; Janotti, Anderson; Meng, Andrew C; Tang, Kechao; Van de Walle, Chris G; McIntyre, Paul C

    2018-02-14

    Layered atomic-layer-deposited and forming-gas-annealed TiO 2 /Al 2 O 3 dielectric stacks, with the Al 2 O 3 layer interposed between the TiO 2 and a p-type germanium substrate, are found to exhibit a significant interface charge dipole that causes a ∼-0.2 V shift of the flat-band voltage and suppresses the leakage current density for gate injection of electrons. These effects can be eliminated by the formation of a trilayer dielectric stack, consistent with the cancellation of one TiO 2 /Al 2 O 3 interface dipole by the addition of another dipole of opposite sign. Density functional theory calculations indicate that the observed interface-dependent properties of TiO 2 /Al 2 O 3 dielectric stacks are consistent in sign and magnitude with the predicted behavior of Al Ti and Ti Al point-defect dipoles produced by local intermixing of the Al 2 O 3 /TiO 2 layers across the interface. Evidence for such intermixing is found in both electrical and physical characterization of the gate stacks.

  3. Methods For Calculating Thyroid Doses to The Residents Of Ozersk Due to 131I Releases From The Stacks of The Mayak Production Association

    Energy Technology Data Exchange (ETDEWEB)

    Rovny, Sergey I.; Mokrov, Y.; Stukalov, Pavel M.; Beregich, D. A.; Teplyakov, I. I.; Anspaugh, L. R.; Napier, Bruce A.

    2009-10-23

    The Mayak Production Association (MPA) was established in the late 1940s in accordance with a special Decree of the USSR Government for the production of nuclear weapons. In early years of MPA operation, due to the lack of experience and absence of effective methods of RW management, the enterprise had extensive routine (designed) and non-routine (accidental) releases of gaseous radioactive wastes to the atmosphere. These practices resulted in additional technogenic radiation exposure of residents inhabiting populated areas near the MPA. The primary objective of ongoing studies under JCCRER Project 1.4 is to estimate doses to the residents of Ozersk due to releases of radioactive substances from the stacks of MPA. Preliminary scoping studies have demonstrated that releases of radioactive iodine (131I) from the stacks of the Mayak Radiochemical Plant represented the major contribution to the dose to residents of Ozersk and of other nearby populated areas. The behavior of 131I in the environment and of 131I migration through biological food chains (vegetation-cows-milk-humans) indicated a need for use of special mathematical models to perform the estimation of radiation doses to the population. The goal of this work is to select an appropriate model of the iodine migration in biological food chains and to justify numerical values of the model parameters.

  4. Omnidirectional mirror based on Bragg stacks with a periodic gain-loss modulation

    International Nuclear Information System (INIS)

    Manzanares-Martinez, Jesus; Ham-Rodriguez, Carlos Ivan; Moctezuma-Enriquez, Damian; Manzanares-Martinez, Betsabe

    2014-01-01

    In this work we demonstrate that a Bragg Stack with a periodic gain-loss modulation can function as an Omnidirectional Mirror (OM) with complete reflection at any angle of incidence irrespective of the light polarization. The Bragg Stack is composed by the periodic variation of two layers with the same value of the real part of the refractive index (n r ) and a periodic modulation in the imaginary part (n i ). The origin of the band gaps is due to the interference of complex waves with propagating and evanescent fields in each layer. It is found that the band gaps are wider as the contrast n i /n r increases. We have found the ambient conditions to obtain an OM considering an auxiliary medium n ′ external to the Bragg Stack

  5. Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

    International Nuclear Information System (INIS)

    Moreau, G.; Azouigui, S.; Cong, D.-Y.; Merghem, K.; Martinez, A.; Patriarche, G.; Ramdane, A.; Lelarge, F.; Rousseau, B.; Dagens, B.; Poingt, F.; Accard, A.; Pommereau, F.

    2006-01-01

    The authors report the growth of 6-, 9-, and 12-layer InAs/InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm -1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p-type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 W/A per facet) and output power (P out =20 mW), close to those of conventional quantum well devices

  6. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Hultqvist, Adam; Bent, Stacey F. [Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States); Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  7. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G. C., E-mail: siva1987@iopb.res.in, E-mail: skp@iopb.res.in, E-mail: gcr@iopb.res.in [Physics Enclave, Plot No-664/4825, Lane-4A, Shree Vihar, Bhubaneswar-751031, Odisha (India); Sahu, Sivabrata [School of Applied Sciences (Physics), KIIT University, Bhubaneswar-751024, Odisha (India); Panda, S. K. [K.D. Science College, Pochilima, Hinjilicut,Pin-761101 Ganjam, Orissa (India)

    2016-04-13

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  8. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    International Nuclear Information System (INIS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-01-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  9. Remote Sensing Image Classification Based on Stacked Denoising Autoencoder

    Directory of Open Access Journals (Sweden)

    Peng Liang

    2017-12-01

    Full Text Available Focused on the issue that conventional remote sensing image classification methods have run into the bottlenecks in accuracy, a new remote sensing image classification method inspired by deep learning is proposed, which is based on Stacked Denoising Autoencoder. First, the deep network model is built through the stacked layers of Denoising Autoencoder. Then, with noised input, the unsupervised Greedy layer-wise training algorithm is used to train each layer in turn for more robust expressing, characteristics are obtained in supervised learning by Back Propagation (BP neural network, and the whole network is optimized by error back propagation. Finally, Gaofen-1 satellite (GF-1 remote sensing data are used for evaluation, and the total accuracy and kappa accuracy reach 95.7% and 0.955, respectively, which are higher than that of the Support Vector Machine and Back Propagation neural network. The experiment results show that the proposed method can effectively improve the accuracy of remote sensing image classification.

  10. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    Directory of Open Access Journals (Sweden)

    Z N Khan

    Full Text Available Metal Oxide Semiconductor (MOS capacitors (MOSCAP have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer, time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  11. Hanford Site radionuclide national emission standards for hazardous air pollutants registered stack source assessment

    Energy Technology Data Exchange (ETDEWEB)

    Davis, W.E.; Barnett, J.M.

    1994-07-01

    On February 3, 1993, the US Department of Energy, Richland Operations Office received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the US Environmental Protection Agency,, Region 10. The Compliance Order requires the Richland Operations Office to evaluate all radionuclide emission points at the Hanford Site . The evaluation also determined if the effective dose equivalent from any of these stack emissions exceeded 0.1 mrem/yr, which will require the stack to have continuous monitoring. The result of this assessment identified a total of 16 stacks as having potential emissions that,would cause an effective dose equivalent greater than 0.1 mrem/yr.

  12. Hanford Site radionuclide national emission standards for hazardous air pollutants registered stack source assessment

    International Nuclear Information System (INIS)

    Davis, W.E.; Barnett, J.M.

    1994-01-01

    On February 3, 1993, the US Department of Energy, Richland Operations Office received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the US Environmental Protection Agency,, Region 10. The Compliance Order requires the Richland Operations Office to evaluate all radionuclide emission points at the Hanford Site . The evaluation also determined if the effective dose equivalent from any of these stack emissions exceeded 0.1 mrem/yr, which will require the stack to have continuous monitoring. The result of this assessment identified a total of 16 stacks as having potential emissions that,would cause an effective dose equivalent greater than 0.1 mrem/yr

  13. SU-F-I-06: Evaluation of Imaging Dose for Modulation Layer Based Dual Energy Cone-Beam CT

    Energy Technology Data Exchange (ETDEWEB)

    Ju, Eunbin [Department of Medical Science, Ewha Womans University, Seoul (Korea, Republic of); Ahn, SoHyun; Cho, Samju; Keum, Ki Chang [Department of Radiation Oncology, School of Medicine, Yonsei Univeristy, Seoul (Korea, Republic of); Lee, Rena [Department of Radiation Oncology, School of Medicine, Ewha Womans University, Seoul (Korea, Republic of)

    2016-06-15

    Purpose: Dual energy cone beam CT system is finding a variety of promising applications in diagnostic CT, both in imaging of endogenous materials and exogenous materials across a range of body sites. Dual energy cone beam CT system to suggest in this study acquire image by rotating 360 degree with half of the X-ray window covered using copper modulation layer. In the region that covered by modulation layer absorb the low energy X-ray by modulation layer. Relative high energy X-ray passes through the layer and contributes to image reconstruction. Dose evaluation should be carried out in order to utilize such an imaging acquirement technology for clinical use. Methods: For evaluating imaging dose of modulation layer based dual energy cone beam CT system, Prototype cone beam CT that configured X-ray tube (D054SB, Toshiba, Japan) and detector (PaxScan 2520V, Varian Medical Systems, Palo Alto, CA) is used. A range of 0.5–2.0 mm thickness of modulation layer is implemented in Monte Carlo simulation (MCNPX, ver. 2.6.0, Los Alamos National Laboratory, USA) with half of X-ray window covered. In-house phantom using in this study that has 3 cylindrical phantoms configured water, Teflon air with PMMA covered for verifying the comparability the various material in human body and is implemented in Monte Carlo simulation. The actual dose with 2.0 mm copper covered half of X-ray window is measured using Gafchromic EBT3 film with 5.0 mm bolus for compared with simulative dose. Results: Dose in phantom reduced 33% by copper modulation layer of 2.0 mm. Scattering dose occurred in modulation layer by Compton scattering effect is 0.04% of overall dose. Conclusion: Modulation layer of that based dual energy cone beam CT has not influence on unnecessary scatter dose. This study was supported by the Radiation Safety Research Programs (1305033) through the Nuclear Safety and Security Commission.

  14. The Subwavelength Optical Field Confinement in a Multilayered Microsphere with Quasiperiodic Spherical Stack

    Directory of Open Access Journals (Sweden)

    Gennadiy N. Burlak

    2008-01-01

    Full Text Available We study the frequency spectrum of nanoemitters placed in a microsphere with a quasiperiodic subwavelength spherical stack. The spectral evolution of transmittancy at the change of thickness of two-layer blocks, constructed following the Fibonacci sequence, is investigated. When the number of layers (Fibonacci order increases, the structure of spectrum acquires a fractal form. Our calculations show the radiation confinement and gigantic field enhancement, when the ratio of layers’ widths in twolayer blocks of the stack is close to the golden mean value.

  15. Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks

    Science.gov (United States)

    Limam, Emna; Maurice, Vincent; Seyeux, Antoine; Zanna, Sandrine; Klein, Lorena H.; Chauveau, Grégory; Grèzes-Besset, Catherine; Savin De Larclause, Isabelle; Marcus, Philippe

    2018-04-01

    The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on model stack samples deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous H2S. It is shown that suppressing the surface pores resulting from the bulk SiC material production process by surface pretreatment eliminates the high aspect ratio surface sites that are imperfectly protected by the SiO2 overcoat after the deposition of silver. The formation of channels connecting the silver layer to its environment through the failing protection layer at the surface pores and locally enabling H2S entry and Ag2S growth as columns until emergence at the stack surface is suppressed, which markedly delays tarnishing initiation and thereby preserves the optical performance. The results revealed that residual tarnishing initiation proceeds by a mechanism essentially identical in nature but involving different pathways short circuiting the protection layer and enabling H2S ingress until the silver layer. These permeation pathways are suggested to be of microstructural origin and could correspond to the incompletely coalesced intergranular boundaries of the SiO2 layer.

  16. Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki; Harada, Yukihiro

    2014-01-01

    The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n + -GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarization sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.

  17. Stacking change in MoS2 bilayers induced by interstitial Mo impurities.

    Science.gov (United States)

    Cortés, Natalia; Rosales, Luis; Orellana, Pedro A; Ayuela, Andrés; González, Jhon W

    2018-02-01

    We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS 2 bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB' (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.

  18. Omnidirectional mirror based on Bragg stacks with a periodic gain-loss modulation

    Energy Technology Data Exchange (ETDEWEB)

    Manzanares-Martinez, Jesus; Ham-Rodriguez, Carlos Ivan [Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, Hermosillo, Sonora 83000 (Mexico); Moctezuma-Enriquez, Damian, E-mail: foxonicos@gmail.com [Centro de Investigacion en Materiales Avanzados (CIMAV), Miguel de Cervantes 120, Chihuahua 31109 (Mexico); Manzanares-Martinez, Betsabe [Departamento de Fisica, Universidad de Sonora, Blvd. Luis Encinas y Rosales, Hermosillo, Sonora 83000 (Mexico)

    2014-01-15

    In this work we demonstrate that a Bragg Stack with a periodic gain-loss modulation can function as an Omnidirectional Mirror (OM) with complete reflection at any angle of incidence irrespective of the light polarization. The Bragg Stack is composed by the periodic variation of two layers with the same value of the real part of the refractive index (n{sub r}) and a periodic modulation in the imaginary part (n{sub i}). The origin of the band gaps is due to the interference of complex waves with propagating and evanescent fields in each layer. It is found that the band gaps are wider as the contrast n{sub i}/n{sub r} increases. We have found the ambient conditions to obtain an OM considering an auxiliary medium n{sup ′} external to the Bragg Stack.

  19. Stacking fault density and bond orientational order of fcc ruthenium nanoparticles

    Science.gov (United States)

    Seo, Okkyun; Sakata, Osami; Kim, Jae Myung; Hiroi, Satoshi; Song, Chulho; Kumara, Loku Singgappulige Rosantha; Ohara, Koji; Dekura, Shun; Kusada, Kohei; Kobayashi, Hirokazu; Kitagawa, Hiroshi

    2017-12-01

    We investigated crystal structure deviations of catalytic nanoparticles (NPs) using synchrotron powder X-ray diffraction. The samples were fcc ruthenium (Ru) NPs with diameters of 2.4, 3.5, 3.9, and 5.4 nm. We analyzed average crystal structures by applying the line profile method to a stacking fault model and local crystal structures using bond orientational order (BOO) parameters. The reflection peaks shifted depending on rules that apply to each stacking fault. We evaluated the quantitative stacking faults densities for fcc Ru NPs, and the stacking fault per number of layers was 2-4, which is quite large. Our analysis shows that the fcc Ru 2.4 nm-diameter NPs have a considerably high stacking fault density. The B factor tends to increase with the increasing stacking fault density. A structural parameter that we define from the BOO parameters exhibits a significant difference from the ideal value of the fcc structure. This indicates that the fcc Ru NPs are highly disordered.

  20. Spatial walk-off compensated beta-barium borate stack for efficient deep-UV generation

    Science.gov (United States)

    Li, Da; Lee, Huai-Chuan; Meissner, Stephanie K.; Meissner, Helmuth E.

    2018-02-01

    Beta-Barium Borate (β-BBO) crystal is commonly used in nonlinear frequency conversion from visible to deep ultraviolet (DUV). However, in a single crystal BBO, its large spatial walk-off effect will reduce spatial overlap of ordinary and extraordinary beam, and thus degrade the conversion efficiency. To overcome the restrictions in current DUV conversion systems, Onyx applies adhesive-free bonding technique to replace the single crystal BBO with a spatial Walk-off Compensated (WOC) BBO stack, which is capable of correcting the spatial walk-off while retaining a constant nonlinear coefficient in the adjacent bonding layers. As a result, the β-BBO stack will provide good beam quality, high conversion efficiency, and broader acceptance angle and spectral linewidth, when compared with a single crystal of BBO. In this work, we report on performance of a spatial walk-off compensated β-BBO stack with adhesive-free bonding technique, for efficiently converting from the visible to DUV range. The physics behind the WOC BBO stack are demonstrated, followed by simulation of DUV conversion efficiency in an external resonance cavity. We also demonstrate experimentally the beam quality improvement in a 4-layer WOC BBO stack over a single BBO crystal.

  1. Sliding charge density wave in the monophosphate tungsten bronze (PO2)4(WO3)2m with alternate stacking of m=4 and m=6 WO3 layers

    International Nuclear Information System (INIS)

    Foury-Leylekian, P.; Sandre, E.; Ravy, S.; Pouget, J.-P.; Elkaim, E.; Roussel, P.; Groult, D.; Labbe, Ph.

    2002-01-01

    The monophosphate tungsten bronzes (PO 2 ) 4 (WO 3 ) 2m form family of two-dimensional metals which exhibit charge density wave (CDW) instabilities. These materials are generally built by the regular stacking of (a,b) layers in which chains made of segments of m WO 6 octahedra directed along the a and a±b directions are delimited. Their electronic structure thus originates from quasi-one-dimensional (1D) bands located on these chains. As a consequence their Fermi surface (FS) exhibits large flat portions whose nesting gives rise to successive CDW instabilities. Here we present a structural study of the CDW instability of the (PO 2 ) 4 (WO 3 ) 10 member formed by the alternate stacking of layers built with segments of m=4 and m=6 WO 6 octahedra. Its ab initio electronic structure calculation shows that the FS of this member exhibits large flat portions which can be extremely well nested. Its best nesting wave vector accounts for the modulation wave vector stabilized by the CDW transition which occurs at 156 K. Because of the regular stacking of layers of different m values the FS is slightly split. The unusual thermal dependence of the x-ray satellite intensity provides evidence that the two types of layers become modulated at different temperature. This also leads to a slight thermal sliding of the CDW-nesting modulation wave vector, which can be accounted for within the framework of a Landau-Ginzburg theory. In addition, the observation of a global hysteresis in the thermal cycling of the satellite intensity, as well as the degradation of the interlayer order upon cooling, suggest the formation of a disordered lattice of dilute solitons. Such solitons allow to accommodate the charge transferred between the two types of layer. Finally the relevance of local charge transfers, at intergrowth defects, for example, to create pinned discommensurations that break the CDW coherence is emphasized in this whole family of bronzes

  2. Asymmetric Flexible Supercapacitor Stack

    Directory of Open Access Journals (Sweden)

    Leela Mohana Reddy A

    2008-01-01

    Full Text Available AbstractElectrical double layer supercapacitor is very significant in the field of electrical energy storage which can be the solution for the current revolution in the electronic devices like mobile phones, camera flashes which needs flexible and miniaturized energy storage device with all non-aqueous components. The multiwalled carbon nanotubes (MWNTs have been synthesized by catalytic chemical vapor deposition technique over hydrogen decrepitated Mischmetal (Mm based AB3alloy hydride. The polymer dispersed MWNTs have been obtained by insitu polymerization and the metal oxide/MWNTs were synthesized by sol-gel method. Morphological characterizations of polymer dispersed MWNTs have been carried out using scanning electron microscopy (SEM, transmission electron microscopy (TEM and HRTEM. An assymetric double supercapacitor stack has been fabricated using polymer/MWNTs and metal oxide/MWNTs coated over flexible carbon fabric as electrodes and nafion®membrane as a solid electrolyte. Electrochemical performance of the supercapacitor stack has been investigated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.

  3. Arsenic sulfide layers for dielectric reflection mirrors prepared from solution

    Science.gov (United States)

    Matějec, Vlastimil; Pedlikova, Jitka; BartoÅ, Ivo; Podrazký, Ondřej

    2017-12-01

    Chalcogenide materials due to high refractive indices, transparency in the mid-IR spectral region, nonlinear refractive indices, etc, have been employed as fibers and films in different photonic devices such as light amplifiers, optical regenerators, broadband radiation sources. Chalcogenide films can be prepared by physical methods as well as by solution-based techniques in which solutions of chalcogenides in amines are used. This paper presents results on the solution-based fabrication and optical characterization of single arsenic sulfide layers and multilayer stacks containing As2S3 layers together with porous silica layers coated on planar and fiber-optic substrates. Input As2S3 solutions for the layer fabrications were prepared by dissolving As2S3 powder in n-propylamine in a concentration of 0.50 mol/l. These solutions were applied on glass slides by dip-coating method and obtained layers were thermally treated in vacuum at temperatures up to 180 °C. Similar procedure was used for As2S3 layers in multilayer stacks. Such stacks were fabricated by repeating the application of one porous silica layer prepared by the sol-gel method and one As2S3 layer onto glass slides or silica fibers (a diameter of 0.3 mm) by using the dip-coating method. It has been found that the curing process of the applied layers has to be carefully controlled in order to obtain stacks with three pairs of such layers. Single arsenic and porous silica layers were characterized by optical microscopy, and by measuring their transmission spectra in a range of 200-2500 nm. Thicknesses and refractive indices were estimated from the spectra. Transmission spectra of planar multilayer stacks were measured, too. Interference bands have been determined from optical measurements on the multilayer stacks with a minimum transmittance of about 50% which indicates the possibility of using such stacks as reflecting mirrors.

  4. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  5. Ultra thin buried oxide layers formed by low dose Simox process

    Energy Technology Data Exchange (ETDEWEB)

    Aspar, B.; Pudda, C.; Papon, A.M. [CEA Centre d`Etudes de Grenoble, 38 (France). Lab. d`Electronique et d`Instrumentation; Auberton Herve, A.J.; Lamure, J.M. [SOITEC, 38 - Grenoble (France)

    1994-12-31

    Oxygen low dose implantation is studied for two implantation energies. For 190 keV, a continuous buried oxide layer is obtained with a high dislocation density in the top silicon layer due to SiO{sub 2} precipitates. For 120 keV, this silicon layer is free of SiO{sub 2} precipitate and has a low dislocation density. Low density of pin-holes is observed in the buried oxide. The influence of silicon islands in the buried oxide on the breakdown electric fields is discussed. (authors). 6 refs., 5 figs.

  6. Ultra thin buried oxide layers formed by low dose Simox process

    International Nuclear Information System (INIS)

    Aspar, B.; Pudda, C.; Papon, A.M.

    1994-01-01

    Oxygen low dose implantation is studied for two implantation energies. For 190 keV, a continuous buried oxide layer is obtained with a high dislocation density in the top silicon layer due to SiO 2 precipitates. For 120 keV, this silicon layer is free of SiO 2 precipitate and has a low dislocation density. Low density of pin-holes is observed in the buried oxide. The influence of silicon islands in the buried oxide on the breakdown electric fields is discussed. (authors). 6 refs., 5 figs

  7. Optoelectronic interconnects for 3D wafer stacks

    Science.gov (United States)

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  8. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2018-01-01

    Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

  9. Calculated stacking-fault energies of elemental metals

    DEFF Research Database (Denmark)

    Rosengaard, N. M.; Skriver, Hans Lomholt

    1993-01-01

    -sphere approximations. The results are in excellent agreement with recent layer Korringa-Kohn-Rostoker Green's-function calculations where stacking-fault energies for Ni, Cu, Rh, Pd, Ag, Ir, and Au were found by means of the the so-called force theorem. We find that the self-consistent fault energies for all the metals...

  10. Structure of fault stackings of molecular layers X-M-X in CdI2 polytypic crystals

    International Nuclear Information System (INIS)

    Palosz, B.; Przedmojski, J.

    1984-01-01

    The arrangements of molecular layers I-Cd-I, which may be regarded as 'faulted' for CdI 2 polytypic crystals, are analyzed. Tentative classification of faults into those which are intermediate structure between the basic polytypes 2H and 4H and faults occurring between different blocks of pure structure 4 H is proposed. The connection between some growth parameters and the structure of faults in CdI 2 crystals grown from solutions is discussed. It is shown that the geometrical classification of stacking faults used for layered inorganic crystals is not appropriate for the description of the faults existing in polytypic crystals of MX 2 type. The effect of weak external electric and magnetic fields on the polytypic structure of CdI 2 is analyzed. The experiments performed for several hundred of polytypes of CdI 2 showed that the external fields may, in some conditions, affect the organization of the polytypic structure of crystals very strongly. In particular, it was found that the external fields may change the period of polytype cells and that the relative number of hexagonal and rhombohedral polytypes differ very strongly for crystals grown in the absence and in the presence of external electric and magnetic fields. (author)

  11. Role of stacking disorder in ice nucleation.

    Science.gov (United States)

    Lupi, Laura; Hudait, Arpa; Peters, Baron; Grünwald, Michael; Gotchy Mullen, Ryan; Nguyen, Andrew H; Molinero, Valeria

    2017-11-08

    The freezing of water affects the processes that determine Earth's climate. Therefore, accurate weather and climate forecasts hinge on good predictions of ice nucleation rates. Such rate predictions are based on extrapolations using classical nucleation theory, which assumes that the structure of nanometre-sized ice crystallites corresponds to that of hexagonal ice, the thermodynamically stable form of bulk ice. However, simulations with various water models find that ice nucleated and grown under atmospheric temperatures is at all sizes stacking-disordered, consisting of random sequences of cubic and hexagonal ice layers. This implies that stacking-disordered ice crystallites either are more stable than hexagonal ice crystallites or form because of non-equilibrium dynamical effects. Both scenarios challenge central tenets of classical nucleation theory. Here we use rare-event sampling and free energy calculations with the mW water model to show that the entropy of mixing cubic and hexagonal layers makes stacking-disordered ice the stable phase for crystallites up to a size of at least 100,000 molecules. We find that stacking-disordered critical crystallites at 230 kelvin are about 14 kilojoules per mole of crystallite more stable than hexagonal crystallites, making their ice nucleation rates more than three orders of magnitude higher than predicted by classical nucleation theory. This effect on nucleation rates is temperature dependent, being the most pronounced at the warmest conditions, and should affect the modelling of cloud formation and ice particle numbers, which are very sensitive to the temperature dependence of ice nucleation rates. We conclude that classical nucleation theory needs to be corrected to include the dependence of the crystallization driving force on the size of the ice crystallite when interpreting and extrapolating ice nucleation rates from experimental laboratory conditions to the temperatures that occur in clouds.

  12. Study on the polarity, solubility, and stacking characteristics of asphaltenes

    KAUST Repository

    Zhang, Long-li

    2014-07-01

    The structure and transformation of fused aromatic ring system in asphaltenes play an important role in the character of asphaltenes, and in step affect the properties of heavy oils. Polarity, solubility and structural characteristics of asphaltenes derived from Tahe atmospheric residue (THAR) and Tuo-826 heavy crude oil (Tuo-826) were analyzed for study of their internal relationship. A fractionation method was used to separate the asphaltenes into four sub-fractions, based on their solubility in the mixed solvent, for the study of different structural and physical-chemical properties, such as polarity, solubility, morphology, stacking characteristics, and mean structural parameters. Transmission electron microscope (TEM) observation can present the intuitive morphology of asphaltene molecules, and shows that the structure of asphaltenes is in local order as well as long range disorder. The analysis results showed that n-heptane asphaltenes of THAR and Tuo-826 had larger dipole moment values, larger fused aromatic ring systems, larger mean number of stacking layers, and less interlayer spacing between stacking layers than the corresponding n-pentane asphaltenes. The sub-fractions that were inclined to precipitate from the mixture of n-heptane and tetrahydrofuran had larger polarity and less solubility. From the first sub-fraction to the fourth sub-fraction, polarity, mean stacking numbers, and average layer size from the TEM images follow a gradual decrease. The structural parameters derived from TEM images could reflect the largest fused aromatic ring system in asphaltene molecule, yet the parameters derived from 1H NMR data reflected the mean message of poly-aromatic ring systems. The structural parameters derived from TEM images were more consistent with the polarity variation of sub-fractions than those derived from 1H NMR data, which indicates that the largest fused aromatic ring system will play a more important role in the stacking characteristics of

  13. Dose verification in HDR brachytherapy and IMRT with Fricke gel-layer dosimeters

    International Nuclear Information System (INIS)

    Gambarini, G.; Negri, A.; Bartesaghi, G.; Pirola, L.; Carrara, M.; Gambini, I.; Tomatis, S.; Fallai, C.; Zonca, G.; Stokucova, J.

    2009-10-01

    At the Department of Physics of the Universita degli Studi di Milano in collaboration with the Medical Physics Unit and the Radiotherapy Unit of the Fondazione IRCCS Istituto Nazionale dei Tumori di Milano the research of a dosimetric technique based on Fricke gel layers and optical analysis in under study. In fact, Fricke gel layer dosimeters (FGLD) have various advantages such as the tissue-equivalence for photons in the clinical energy interval, the possibility to obtain the spatial information about continuous dose distribution and not only a point dose distribution as it is for example in the case of ionization chambers, TLD or diodes and the possibility to obtain the information about 3D dose distributions. In this work, specific applications of FGLD to absolute dosimetry in radiotherapy have been studied, i.e. in-phantom measurements of complex intensity modulated radiation therapy fields (IMRT) and complex brachytherapy fields. (Author)

  14. Full Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction Systems

    Science.gov (United States)

    Su, Ji; Jiang, Xiaoning; Zu, Tian-Bing

    2011-01-01

    constant at both resonance and off resonance frequencies. The effective piezoelectric constant can be alternated by varying the size of each component, the degree of the pre-curvature of the positive strain components, the thickness of each layer in the multilayer stacks, and the piezoelectric constant of the material used. Because all of the elements are piezoelectric components, Stacked HYBATS can serve as projector and receiver for underwater detection. The performance of this innovation can be enhanced by improving the piezoelectric properties.

  15. Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

    2013-04-30

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

  16. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  17. A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

    Science.gov (United States)

    Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

    2016-01-21

    We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

  18. 3D Segmentations of Neuronal Nuclei from Confocal Microscope Image Stacks

    Directory of Open Access Journals (Sweden)

    Antonio eLaTorre

    2013-12-01

    Full Text Available In this paper, we present an algorithm to create 3D segmentations of neuronal cells from stacks of previously segmented 2D images. The idea behind this proposal is to provide a general method to reconstruct 3D structures from 2D stacks, regardless of how these 2D stacks have been obtained. The algorithm not only reuses the information obtained in the 2D segmentation, but also attempts to correct some typical mistakes made by the 2D segmentation algorithms (for example, under segmentation of tightly-coupled clusters of cells. We have tested our algorithm in a real scenario --- the segmentation of the neuronal nuclei in different layers of the rat cerebral cortex. Several representative images from different layers of the cerebral cortex have been considered and several 2D segmentation algorithms have been compared. Furthermore, the algorithm has also been compared with the traditional 3D Watershed algorithm and the results obtained here show better performance in terms of correctly identified neuronal nuclei.

  19. Probing Temperature Inside Planar SOFC Short Stack, Modules, and Stack Series

    Science.gov (United States)

    Yu, Rong; Guan, Wanbing; Zhou, Xiao-Dong

    2017-02-01

    Probing temperature inside a solid oxide fuel cell (SOFC) stack lies at the heart of the development of high-performance and stable SOFC systems. In this article, we report our recent work on the direct measurements of the temperature in three types of SOFC systems: a 5-cell short stack, a 30-cell stack module, and a stack series consisting of two 30-cell stack modules. The dependence of temperature on the gas flow rate and current density was studied under a current sweep or steady-state operation. During the current sweep, the temperature inside the 5-cell stack decreased with increasing current, while it increased significantly at the bottom and top of the 30-cell stack. During a steady-state operation, the temperature of the 5-cell stack was stable while it was increased in the 30-cell stack. In the stack series, the maximum temperature gradient reached 190°C when the gas was not preheated. If the gas was preheated and the temperature gradient was reduced to 23°C in the stack series with the presence of a preheating gas and segmented temperature control, this resulted in a low degradation rate.

  20. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    International Nuclear Information System (INIS)

    Guo, Yuzheng; Robertson, John

    2016-01-01

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  1. Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

    International Nuclear Information System (INIS)

    Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

    2014-01-01

    The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

  2. Exposure of CR39 Stacks to Oxygen and Sulphur Beams at the CERN-SPS

    CERN Multimedia

    2002-01-01

    We plan to expose 8 stacks of CR39 sheets to oxygen and sulphur ions of 60 and 200~GeV at the CERN-SPS.\\\\ \\\\ The main purpose of the exposures is the calibration of the CR39 sheets used for a large area experimental search for magnetic monopoles at the Gran Sasso Laboratory (experiment MACRO). \\\\ \\\\ The stacks have 20~layers of CR39, each layer 13~cm~x~7~cm and 1.4~mm thick. A copper absorber is located after the first 6 layers. \\\\ \\\\ We require exposures of about 2000 tracks per cm$^2$ over the entire area of the stack with a uniform illumination. The standard beam used for the emulsion experiments is normally adequate for this purpose.\\\\ \\\\ We have performed one exposure to sulphur ions. The etched tracks have been measured automatically with the Elbeck image analyser system. We measured the incoming sulphur ions as well as the nuclear fragments produced in the copper absorber. Clean separation among the peaks due to the various fragments is obtained (there is no indication of nuclei with fractional electri...

  3. AFFORDABLE MULTI-LAYER CERAMIC (MLC) MANUFACTURING FOR POWER SYSTEMS (AMPS)

    Energy Technology Data Exchange (ETDEWEB)

    E.A. Barringer, Ph.D.

    2002-11-27

    McDermott Technology, Inc. (MTI) is attempting to develop high-performance, cost-competitive solid oxide fuel cell (SOFC) power systems. Recognizing the challenges and limitations facing the development of SOFC stacks comprised of electrode-supported cells and metallic interconnects, McDermott Technology, Inc. (MTI) has chosen to pursue an alternate path to commercialization. MTI is developing a multi-layer, co-fired, planar SOFC stack that will provide superior performance and reliability at reduced costs relative to competing designs. The MTI approach combines state-of-the-art SOFC materials with the manufacturing technology and infrastructure established for multi-layer ceramic (MLC) packages for the microelectronics industry. The rationale for using MLC packaging technology is that high quality, low-cost manufacturing has been demonstrated at high volumes. With the proper selection of SOFC materials, implementation of MLC fabrication methods offers unique designs for stacks (cells and interconnects) that are not possible through traditional fabrication methods. The MTI approach eliminates use of metal interconnects and ceramic-metal seals, which are primary sources of stack performance degradation. Co-fired cells are less susceptible to thermal cycling stresses by using material compositions that have closely matched coefficients of thermal expansion between the cell and the interconnect. The development of this SOFC stack technology was initiated in October 1999 under the DOE cosponsored program entitled ''Affordable Multi-layer Ceramic Manufacturing for Power Systems (AMPS)''. The AMPS Program was conducted as a two-phase program: Phase I--Feasibility Assessment (10/99--9/00); and Phase II--Process Development for Co-fired Stacks (10/00-3/02). This report provides a summary of the results from Phase I and a more detailed review of the results for Phase II. Phase I demonstrated the feasibility for fabricating multi-layer, co-fired cells and

  4. Multilayer Strip Dipole Antenna Using Stacking Technique and Its Application for Curved Surface

    Directory of Open Access Journals (Sweden)

    Charinsak Saetiaw

    2013-01-01

    Full Text Available This paper presents the design of multilayer strip dipole antenna by stacking a flexible copper-clad laminate utilized for curved surface on the cylindrical objects. The designed antenna will reduce the effects of curving based on relative lengths that are changed in each stacking flexible copper-clad laminate layer. Curving is different from each layer of the antenna, so the resonance frequency that resulted from an extended antenna provides better frequency response stability compared to modern antenna when it is curved or attached to cylindrical objects. The frequency of multilayer antenna is designed at 920 MHz for UHF RFID applications.

  5. A Urea Biosensor from Stacked Sol-Gel Films with Immobilized Nile Blue Chromoionophore and Urease Enzyme

    OpenAIRE

    Alqasaimeh, Muawia Salameh; Heng, Lee Yook; Ahmad, Musa

    2007-01-01

    An optical urea biosensor was fabricated by stacking several layers of sol-gel films. The stacking of the sol-gel films allowed the immobilization of a Nile Blue chromoionophore (ETH 5294) and urease enzyme separately without the need of any chemical attachment procedure. The absorbance response of the biosensor was monitored at 550 nm, i.e. the deprotonation of the chromoionophore. This multi-layer sol-gel film format enabled higher enzyme loading in the biosensor to be achieved. The urea op...

  6. Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

    Science.gov (United States)

    Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

    2014-11-25

    Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

  7. 3D tissue formation by stacking detachable cell sheets formed on nanofiber mesh.

    Science.gov (United States)

    Kim, Min Sung; Lee, Byungjun; Kim, Hong Nam; Bang, Seokyoung; Yang, Hee Seok; Kang, Seong Min; Suh, Kahp-Yang; Park, Suk-Hee; Jeon, Noo Li

    2017-03-23

    We present a novel approach for assembling 3D tissue by layer-by-layer stacking of cell sheets formed on aligned nanofiber mesh. A rigid frame was used to repeatedly collect aligned electrospun PCL (polycaprolactone) nanofiber to form a mesh structure with average distance between fibers 6.4 µm. When human umbilical vein endothelial cells (HUVECs), human foreskin dermal fibroblasts, and skeletal muscle cells (C2C12) were cultured on the nanofiber mesh, they formed confluent monolayers and could be handled as continuous cell sheets with areas 3 × 3 cm 2 or larger. Thicker 3D tissues have been formed by stacking multiple cell sheets collected on frames that can be nested (i.e. Matryoshka dolls) without any special tools. When cultured on the nanofiber mesh, skeletal muscle, C2C12 cells oriented along the direction of the nanofibers and differentiated into uniaxially aligned multinucleated myotube. Myotube cell sheets were stacked (upto 3 layers) in alternating or aligned directions to form thicker tissue with ∼50 µm thickness. Sandwiching HUVEC cell sheets with two dermal fibroblast cell sheets resulted in vascularized 3D tissue. HUVECs formed extensive networks and expressed CD31, a marker of endothelial cells. Cell sheets formed on nanofiber mesh have a number of advantages, including manipulation and stacking of multiple cell sheets for constructing 3D tissue and may find applications in a variety of tissue engineering applications.

  8. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Electrochemistry at the edge of a single graphene layer in a nanopore

    DEFF Research Database (Denmark)

    Banerjee, Sutanuka; Shim, Jeong; Rivera, J.

    2013-01-01

    We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and AlO dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to a unique...

  10. Effect of the number of stacking layers on the characteristics of quantum-dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2011-06-27

    A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

  11. Effect of the number of stacking layers on the characteristics of quantum-dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Bhattacharya, Pallab K.; Ng, Tien Khee; Ooi, Boon S.; Schwingenschlö gl, Udo

    2011-01-01

    A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

  12. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    International Nuclear Information System (INIS)

    Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

    2014-01-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

  13. Stacking metal nano-patterns and fabrication of moth-eye structure

    Science.gov (United States)

    Taniguchi, Jun

    2018-01-01

    Nanoimprint lithography (NIL) can be used as a tool for three-dimensional nanoscale fabrication. In particular, complex metal pattern structures in polymer material are demanded as plasmonic effect devices and metamaterials. To fabricate of metallic color filter, we used silver ink and NIL techniques. Metallic color filter was composed of stacking of nanoscale silver disc patterns and polymer layers, thus, controlling of polymer layer thickness is necessary. To control of thickness of polymer layer, we used spin-coating of UV-curable polymer and NIL. As a result, ten stacking layers with 1000 nm layer thickness was obtained and red color was observed. Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For the use of ARS films in mobile phones and tablet PCs, which are touch-screen devices, it is important to protect the films from fingerprints and dust. In addition, as the nanoscale ARS that is touched by the hand is fragile, it is very important to obtain a high abrasion resistance. To solve these problems, a UV-curable epoxy resin has been developed that exhibits antifouling properties and high hardness. The high abrasion resistance ARS films are shown to withstand a load of 250 g/cm2 in the steel wool scratch test, and the reflectance is less than 0.4%.

  14. Simplified design of thin-film polarizing beam splitter using embedded symmetric trilayer stack.

    Science.gov (United States)

    Azzam, R M A

    2011-07-01

    An analytically tractable design procedure is presented for a polarizing beam splitter (PBS) that uses frustrated total internal reflection and optical tunneling by a symmetric LHL trilayer thin-film stack embedded in a high-index prism. Considerable simplification arises when the refractive index of the high-index center layer H matches the refractive index of the prism and its thickness is quarter-wave. This leads to a cube design in which zero reflection for the p polarization is achieved at a 45° angle of incidence independent of the thicknesses of the identical symmetric low-index tunnel layers L and L. Arbitrarily high reflectance for the s polarization is obtained at subwavelength thicknesses of the tunnel layers. This is illustrated by an IR Si-cube PBS that uses an embedded ZnS-Si-ZnS trilayer stack.

  15. Electrically Conductive and Protective Coating for Planar SOFC Stacks

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jung-Pyung; Stevenson, Jeffry W.

    2017-12-04

    Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, prevent Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be

  16. Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Chae, Kyo-Suk; Shim, Tae-Hun; Lian, Guoda; Kim, Moon; Park, Jea-Gun

    2015-05-15

    The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (Tex) was increased from 275 to 325 °C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 °C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd]n-SyAF, abruptly reducing the Δ1 coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.

  17. Numerical simulations of flux flow in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig

    2005-01-01

    We numerically investigate Josephson vortex flux flow states in stacked Josephson junctions, motivated by recent experiments trying to observe the vortices in a square vortex lattice when a magnetic field is applied to layered high-Tc superconductors of the Bi2Sr2CaCu2Ox type. By extensive...

  18. Biological UV-doses and the effect on an ozone layer depletion

    International Nuclear Information System (INIS)

    Dahlback, A.; Henriksen, T.

    1988-08-01

    Effective UV-doses were calculated based on the integrated product of the biological action spectrum and the solar radiation. The calculations included absorption and scattering of UV-radiation in the atmosphere, both for normal ozone conditions as well as for a depleted ozone layer. The effective annual UV-dose increases by approximately 4% per degree of latitude towards the equator. An ozone depletion of 1% increases the annual UV-dose by approximately 1% at 60 o N. A large depletion of 50% over Scandinavia (60 o N) would give this region an effective UV-dose similar to that obtained, with normal ozone conditions, at a latitude of 40 o N (California or the Mediterranean countries). The Antarctic ozone hole increases the annual UV-dose by 20 to 25% which is a similar increase as that attained by moving 5 to 6 degrees of latitude nearer the equator. The annual UV-dose on higher latitudes is mainly determined by the summer values of ozone. Both the ozone values and the effective UV-doses vary from one year to another (within ±4%). No positive or negative trend is observed for Scandinavia from 1978 to 1988

  19. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    Energy Technology Data Exchange (ETDEWEB)

    Tomczak, Y., E-mail: Yoann.Tomczak@imec.be [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium); Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A. [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Liu, E. [Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-01-25

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  20. Hanford Site radionuclide national emission standards for hazardous air pollutants unregistered stack (power exhaust) source assessment

    International Nuclear Information System (INIS)

    Davis, W.E.

    1994-01-01

    On February 3, 1993, the US Department of Energy, Richland Operations Office received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the US Environmental Protection Agency, Region 10. The Compliance Order requires the Richland Operations Office to evaluate all radionuclide emission points at the Hanford Site to determine which are subject to continuous emission measurement requirements in 40 Code of Federal Regulations (CFR) 61, Subpart H, and to continuously measure radionuclide emissions in accordance with 40 CFR 61.93. This evaluation provides an assessment of the 39 unregistered stacks, under Westinghouse Hanford Company's management, and their potential radionuclide emissions, i.e., emissions with no control devices in place. The evaluation also determined if the effective dose equivalent from any of these stack emissions exceeded 0.1 mrem/yr, which will require the stack to have continuous monitoring. The result of this assessment identified three stacks, 107-N, 296-P-26 and 296-P-28, as having potential emissions that would cause an effective dose equivalent greater than 0.1 mrem/yr. These stacks, as noted by 40 CFR 61.93, would require continuous monitoring

  1. Hanford Site radionuclide national emission standards for hazardous air pollutants unregistered stack (power exhaust) source assessment

    Energy Technology Data Exchange (ETDEWEB)

    Davis, W.E.

    1994-08-04

    On February 3, 1993, the US Department of Energy, Richland Operations Office received a Compliance Order and Information Request from the Director of the Air and Toxics Division of the US Environmental Protection Agency, Region 10. The Compliance Order requires the Richland Operations Office to evaluate all radionuclide emission points at the Hanford Site to determine which are subject to continuous emission measurement requirements in 40 Code of Federal Regulations (CFR) 61, Subpart H, and to continuously measure radionuclide emissions in accordance with 40 CFR 61.93. This evaluation provides an assessment of the 39 unregistered stacks, under Westinghouse Hanford Company`s management, and their potential radionuclide emissions, i.e., emissions with no control devices in place. The evaluation also determined if the effective dose equivalent from any of these stack emissions exceeded 0.1 mrem/yr, which will require the stack to have continuous monitoring. The result of this assessment identified three stacks, 107-N, 296-P-26 and 296-P-28, as having potential emissions that would cause an effective dose equivalent greater than 0.1 mrem/yr. These stacks, as noted by 40 CFR 61.93, would require continuous monitoring.

  2. TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Attard, D.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Finnie, K.S. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Triani, G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Barbe, C.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Depagne, C. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Bartlett, J.R. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2005-04-30

    Nanolaminate oxide layers consisting of TiO{sub 2} and Al{sub 2}O{sub 3} have been deposited on silicon using atomic layer deposition (ALD). Characterisation of these films has been achieved by use of a range of modern transmission electron microscopy (TEM)-based techniques, including plasmon loss imaging, energy filtered imaging and scanning TEM (STEM) X-ray line profiling. These have shown that the target thickness of the individual layers in the nanolaminate structures (20 nm) has been met with a high degree of accuracy, that the layers are extremely flat and parallel and that the interfaces between the layers are compositionally abrupt. Localised crystallisation within the stacks, and responses to electron beam irradiation point to the presence of a stress gradient within the layers. The performance of ellipsometry in characterising multilayer stacks has been benchmarked against the TEM measurements. Errors in determination of individual layer thicknesses were found to increase with growing stack size, as expected given the increasing number of interfaces incorporated in each model. The most sophisticated model gave maximum deviations of {+-}4 nm from the TEM determined values for the 5- and 10-layer stacks.

  3. Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

    2008-01-01

    "Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

  4. Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

    2009-01-01

    The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

  5. Comprehensive first-principles study of stable stacking faults in hcp metals

    International Nuclear Information System (INIS)

    Yin, Binglun; Wu, Zhaoxuan; Curtin, W.A.

    2017-01-01

    The plastic deformation in hcp metals is complex, with the associated dislocation core structures and properties not well understood on many slip planes in most hcp metals. A first step in establishing the dislocation properties is to examine the stable stacking fault energy and its structure on relevant slip planes. However, this has been perplexing in the hcp structure due to additional in-plane displacements on both sides of the slip plane. Here, density functional theory guided by crystal symmetry analysis is used to study all relevant stable stacking faults in 6 hcp metals (Mg, Ti, Zr, Re, Zn, Cd). Specially, the stable stacking fault energy, position, and structure on the Basal, Prism I and II, Pyramidal I and II planes are determined using all-periodic supercells with full atomic relaxation. All metals show similar stacking fault position and structure as dictated by crystal symmetry, but the associated stacking fault energy, being governed by the atomic bonding, differs significantly among them. Stacking faults on all the slip planes except the Basal plane show substantial out-of-plane displacements while stacking faults on the Prism II, Pyramidal I and II planes show additional in-plane displacements, all extending to multiple atom layers. The in-plane displacements are not captured in the standard computational approach for stacking faults, and significant differences are shown in the energies of such stacking faults between the standard approach and fully-relaxed case. The existence of well-defined stable stacking fault on the Pyramidal planes suggests zonal dislocations are unlikely. Calculations on the equilibrium partial separation further suggests 〈c + a〉 dissociation into three partials on the Pyramidal I plane is unlikely and 〈c〉 dissociation on Prism planes is unlikely to be stable against climb-dissociation onto the Basal planes in these metals.

  6. Analysis of 3D stacked fully functional CMOS Active Pixel Sensor detectors

    International Nuclear Information System (INIS)

    Passeri, D; Servoli, L; Meroli, S

    2009-01-01

    The IC technology trend is to move from 3D flexible configurations (package on package, stacked dies) to real 3D ICs. This is mainly due to i) the increased electrical performances and ii) the cost of 3D integration which may be cheaper than to keep shrinking 2D circuits. Perspective advantages for particle tracking and vertex detectors applications in High Energy Physics can be envisaged: in this work, we will focus on the capabilities of the state-of-the-art vertical scale integration technologies, allowing for the fabrication of very compact, fully functional, multiple layers CMOS Active Pixel Sensor (APS) detectors. The main idea is to exploit the features of the 3D technologies for the fabrication of a ''stack'' of very thin and precisely aligned CMOS APS layers, leading to a single, integrated, multi-layers pixel sensor. The adoption of multiple-layers single detectors can dramatically reduce the mass of conventional, separated detectors (thus reducing multiple scattering issues), at the same time allowing for very precise measurements of particle trajectory and momentum. As a proof of concept, an extensive device and circuit simulation activity has been carried out, aiming at evaluate the suitability of such a kind of CMOS active pixel layers for particle tracking purposes.

  7. Calculation of cobalt-60 primary and scatter dose in layered heterogeneous phantoms using primary and scatter dose spread arrays

    International Nuclear Information System (INIS)

    Iwasaki, Akira

    1993-01-01

    A method of making 60 Co γ-ray primary and scatter dose spread arrays in water is described. The primary dose spread array is made using forward and backward primary dose spread equations (h 1 and h 2 ), where both equations contain a laterally spread primary dose equation (G), made from measured dose data in a cork phantom. The scatter dose spread array is made using differential scatter-maximum ratio (dSMR) and differential backscatter factor (dBSF) equations (k 1 and k 2 ), where both equations are made to be continuous on the boundary. Primary and scatter dose calculations are performed along the beam axis in layered cork heterogeneous phantoms. It is found, even for 60 Co γ-rays, that when a small tumor in the lung is irradiated with a field that just surrounds the tumor, the beam entrance surface and lateral side of the tumor may obtain no therapeutic dose, because of loss of longitudinal and lateral electronic equilibrium, and when a large tumor in the lung is irradiated with a field just surrounding the tumor, the lateral side of the tumor may obtain no therapeutic dose due to loss of lateral electronic equilibrium. (author)

  8. Radar Target Recognition Based on Stacked Denoising Sparse Autoencoder

    Directory of Open Access Journals (Sweden)

    Zhao Feixiang

    2017-04-01

    Full Text Available Feature extraction is a key step in radar target recognition. The quality of the extracted features determines the performance of target recognition. However, obtaining the deep nature of the data is difficult using the traditional method. The autoencoder can learn features by making use of data and can obtain feature expressions at different levels of data. To eliminate the influence of noise, the method of radar target recognition based on stacked denoising sparse autoencoder is proposed in this paper. This method can extract features directly and efficiently by setting different hidden layers and numbers of iterations. Experimental results show that the proposed method is superior to the K-nearest neighbor method and the traditional stacked autoencoder.

  9. Search for the in-phase Flux Flow mode in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Madsen, Søren Peder

    2006-01-01

    Josephson vortex flux flow states in stacked Josephson junctions are investigated numerically. The aim of the work is to understand the mechanisms behind the formation of triangular (anti-phase) and square (in-phase) vortex lattices, and is motivated by recent experiments on layered BSCCO type high......-T-c superconductors in a magnetic field. In order to keep the problem as simple as possible we consider in detail only the case with two junctions in the stack. (c) 2006 Elsevier B.V. All rights reserved....

  10. High dose implantations of antimony for buried layer applications

    International Nuclear Information System (INIS)

    Gailliard, J.P.; Dupuy, M.; Garcia, M.; Roussin, J.C.

    1978-01-01

    Electrical and physical properties of high dose implantations of antimony in silicon have been studied for use in buried layer applications. The results have been obtained both on and oriented silicon wafers. Following implantations which lead to amorphization we perform an annealing at 600 0 C for 10 mn in order to recrystallize the layer. The observed electrical properties (μ, R) show that the concentration of electrically active antimony ions is greater than that predicted from the solubility of antimony in silicon. Further annealing (in the range 1050 0 - 1200 0 ) induces: firstly a precipitation of the Sb and secondly a diffusion and dissolution of the precipitates. There is a different evolution of the defects in the and silicon slices. T.E.M. reveals no defects in the wafers after one hour annealing at 1200 0 C, whereas defects and twins remain in wafers. Having obtained the evolution of R with time and temperature it is then determined the implantation and annealing conditions which lead to the low resistivity (R = 10) needed for buried layer applications. Results with very many industrially made devices are discussed

  11. P-111 : a thin film encapsulation stack for PLED and OLED displays

    NARCIS (Netherlands)

    Assche, van F.J.H.; Vangheluwe, R.T.; Maes, J.W.C.; Mischke, W.S.; Bijker, M.D.; Dings, F.C.; Evers, M.F.J.; Kessels, W.M.M.; Sanden, van de M.C.M.

    2004-01-01

    For a thin film (<1 µm) encapsulation stack consisting of only 3 plasma deposited silicon nitride layers separated by a thin (<100 nm) organic layer, a water permeation rate of below 10–5 g/m2 per day at 50 °C and 50% rH has been measured using the Ca test. PLED lifetimes of over 500 hours at 60 °C

  12. Bottom-up Fabrication of Multilayer Stacks of 3D Photonic Crystals from Titanium Dioxide.

    Science.gov (United States)

    Kubrin, Roman; Pasquarelli, Robert M; Waleczek, Martin; Lee, Hooi Sing; Zierold, Robert; do Rosário, Jefferson J; Dyachenko, Pavel N; Montero Moreno, Josep M; Petrov, Alexander Yu; Janssen, Rolf; Eich, Manfred; Nielsch, Kornelius; Schneider, Gerold A

    2016-04-27

    A strategy for stacking multiple ceramic 3D photonic crystals is developed. Periodically structured porous films are produced by vertical convective self-assembly of polystyrene (PS) microspheres. After infiltration of the opaline templates by atomic layer deposition (ALD) of titania and thermal decomposition of the polystyrene matrix, a ceramic 3D photonic crystal is formed. Further layers with different sizes of pores are deposited subsequently by repetition of the process. The influence of process parameters on morphology and photonic properties of double and triple stacks is systematically studied. Prolonged contact of amorphous titania films with warm water during self-assembly of the successive templates is found to result in exaggerated roughness of the surfaces re-exposed to ALD. Random scattering on rough internal surfaces disrupts ballistic transport of incident photons into deeper layers of the multistacks. Substantially smoother interfaces are obtained by calcination of the structure after each infiltration, which converts amorphous titania into the crystalline anatase before resuming the ALD infiltration. High quality triple stacks consisting of anatase inverse opals with different pore sizes are demonstrated for the first time. The elaborated fabrication method shows promise for various applications demanding broadband dielectric reflectors or titania photonic crystals with a long mean free path of photons.

  13. LONG-TERM PERFORMANCE OF SOLID OXIDE STACKS WITH ELECTRODE-SUPPORTED CELLS OPERATING IN THE STEAM ELECTROLYSIS MODE

    Energy Technology Data Exchange (ETDEWEB)

    J. E. O' Brien; R. C. O' Brien; X. Zhang; G. Tao; B. J. Butler

    2011-11-01

    Performance characterization and durability testing have been completed on two five-cell high-temperature electrolysis stacks constructed with advanced cell and stack technologies. The solid oxide cells incorporate a negative-electrode-supported multi-layer design with nickel-zirconia cermet negative electrodes, thin-film yttria-stabilized zirconia electrolytes, and multi-layer lanthanum ferrite-based positive electrodes. The per-cell active area is 100 cm2. The stack is internally manifolded with compliant mica-glass seals. Treated metallic interconnects with integral flow channels separate the cells. Stack compression is accomplished by means of a custom spring-loaded test fixture. Initial stack performance characterization was determined through a series of DC potential sweeps in both fuel cell and electrolysis modes of operation. Results of these sweeps indicated very good initial performance, with area-specific resistance values less than 0.5 ?.cm2. Long-term durability testing was performed with A test duration of 1000 hours. Overall performance degradation was less than 10% over the 1000-hour period. Final stack performance characterization was again determined by a series of DC potential sweeps at the same flow conditions as the initial sweeps in both electrolysis and fuel cell modes of operation. A final sweep in the fuel cell mode indicated a power density of 0.356 W/cm2, with average per-cell voltage of 0.71 V at a current of 50 A.

  14. Stacking with stochastic cooling

    Energy Technology Data Exchange (ETDEWEB)

    Caspers, Fritz E-mail: Fritz.Caspers@cern.ch; Moehl, Dieter

    2004-10-11

    Accumulation of large stacks of antiprotons or ions with the aid of stochastic cooling is more delicate than cooling a constant intensity beam. Basically the difficulty stems from the fact that the optimized gain and the cooling rate are inversely proportional to the number of particles 'seen' by the cooling system. Therefore, to maintain fast stacking, the newly injected batch has to be strongly 'protected' from the Schottky noise of the stack. Vice versa the stack has to be efficiently 'shielded' against the high gain cooling system for the injected beam. In the antiproton accumulators with stacking ratios up to 10{sup 5} the problem is solved by radial separation of the injection and the stack orbits in a region of large dispersion. An array of several tapered cooling systems with a matched gain profile provides a continuous particle flux towards the high-density stack core. Shielding of the different systems from each other is obtained both through the spatial separation and via the revolution frequencies (filters). In the 'old AA', where the antiproton collection and stacking was done in one single ring, the injected beam was further shielded during cooling by means of a movable shutter. The complexity of these systems is very high. For more modest stacking ratios, one might use azimuthal rather than radial separation of stack and injected beam. Schematically half of the circumference would be used to accept and cool new beam and the remainder to house the stack. Fast gating is then required between the high gain cooling of the injected beam and the low gain stack cooling. RF-gymnastics are used to merge the pre-cooled batch with the stack, to re-create free space for the next injection, and to capture the new batch. This scheme is less demanding for the storage ring lattice, but at the expense of some reduction in stacking rate. The talk reviews the 'radial' separation schemes and also gives some

  15. Layer-by-Layer-Assembled High-Performance Broadband Antireflection Coatings

    KAUST Repository

    Shimomura, Hiroomi

    2010-03-24

    Nanoparticles are indispensable ingredients of solution-processed optical, dielectric, and catalytic thin films. Although solution-based methods are promising low-cost alternatives to vacuum methods, they can have significant limitations. Coating uniformity, thickness control, roughness control, mechanical durability, and incorporation of a diverse set of functional organic molecules into nanoparticle thin films are major challenges. We have used the electrostatic layer-by-layer assembly technique to make uniform, conformal multistack nanoparticle thin films for optical applications with precise thickness control over each stack. Two particularly sought-after optical applications are broadband antireflection and structural color. The effects of interstack and surface roughness on optical properties of these constructs (e.g., haze and spectral response) have been studied quantitatively using a combination of Fourier-transform methods and atomic force microscopy measurements. Deconvoluting root-mean-square roughness into its large-, intermediate-, and small-scale components enables enhanced optical simulations. A 4-stack broadband antireflection coating (<0.5% average reflectance in the visible range, and 0.2% haze) composed of alternating high-index (n ≈ 1.96) and low-index (n ≈ 1.28) stacks has been made on glass substrate. Films calcinated at 550 °C endure a one-hour-long cloth cleaning test under 100 kPa normal stress. © 2010 American Chemical Society.

  16. EmuStack: An OpenStack-Based DTN Network Emulation Platform (Extended Version

    Directory of Open Access Journals (Sweden)

    Haifeng Li

    2016-01-01

    Full Text Available With the advancement of computing and network virtualization technology, the networking research community shows great interest in network emulation. Compared with network simulation, network emulation can provide more relevant and comprehensive details. In this paper, EmuStack, a large-scale real-time emulation platform for Delay Tolerant Network (DTN, is proposed. EmuStack aims at empowering network emulation to become as simple as network simulation. Based on OpenStack, distributed synchronous emulation modules are developed to enable EmuStack to implement synchronous and dynamic, precise, and real-time network emulation. Meanwhile, the lightweight approach of using Docker container technology and network namespaces allows EmuStack to support a (up to hundreds of nodes large-scale topology with only several physical nodes. In addition, EmuStack integrates the Linux Traffic Control (TC tools with OpenStack for managing and emulating the virtual link characteristics which include variable bandwidth, delay, loss, jitter, reordering, and duplication. Finally, experiences with our initial implementation suggest the ability to run and debug experimental network protocol in real time. EmuStack environment would bring qualitative change in network research works.

  17. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NARCIS (Netherlands)

    Garcia-Alonso Garcia, D.; Smit, S.; Bordihn, S.; Kessels, W.M.M.

    2013-01-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max <4 cm s-1) on n- and p-type

  18. Cleaning of stack gases from combustion of low level radioactive waste in Studsvik, Sweden

    International Nuclear Information System (INIS)

    Haard, E.

    1979-01-01

    The plant for combustion of low-level radioactive waste at Studsvik, Sweden, is described. The waste that is treated comes from nuclear power plants, industry, hospitals and universities. It is estimated to be about 270 ton/year in a few years time. The waste consists of plast, cloth, wood, paper, rubber, biological material and unburnable components such as glass and metals. The bags with waste may have a maximum surface dose rate of 10 mrem/h. For 5 % of the bags the maximum dose rate may be 100 mrem/h. During the combustion, samples of the stack gases are collected. The release of radioactivity is reported to the Swedish authorities. During 1978 three different stack gas cleaning systems, wet cleaning, electrostatic filters and textile filters were investigated. The wet cleaning gave a radioactive sludge which was difficult to take care of. In the electrostatic filters it was difficult to change components due to radioactivity. Therefore the textile filters were chosen. A textile filter will be installed during 1979. The cleaning capacity of the filter is expected to be 90 % and will decrease the collective doses from stack gases with 6.7 manrem/year. The cost is estimated to 450 000 Sw kr/year (100 000 US dollar). (K.K.)

  19. Identity federation in OpenStack - an introduction to hybrid clouds

    Science.gov (United States)

    Denis, Marek; Castro Leon, Jose; Ormancey, Emmanuel; Tedesco, Paolo

    2015-12-01

    We are evaluating cloud identity federation available in the OpenStack ecosystem that allows for on premise bursting into remote clouds with use of local identities (i.e. domain accounts). Further enhancements to identity federation are a clear way to hybrid cloud architectures - virtualized infrastructures layered across independent private and public clouds.

  20. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  1. Algebraic stacks

    Indian Academy of Sciences (India)

    Deligne, Mumford and Artin [DM, Ar2]) and consider algebraic stacks, then we can cons- truct the 'moduli ... the moduli scheme and the moduli stack of vector bundles. First I will give ... 1–31. © Printed in India. 1 ...... Cultura, Spain. References.

  2. Artificial dispersion via high-order homogenization: magnetoelectric coupling and magnetism from dielectric layers

    Science.gov (United States)

    Liu, Yan; Guenneau, Sébastien; Gralak, Boris

    2013-01-01

    We investigate a high-order homogenization (HOH) algorithm for periodic multi-layered stacks. The mathematical tool of choice is a transfer matrix method. Expressions for effective permeability, permittivity and magnetoelectric coupling are explored by frequency power expansions. On the physical side, this HOH uncovers a magnetoelectric coupling effect (odd-order approximation) and artificial magnetism (even-order approximation) in moderate contrast photonic crystals. Comparing the effective parameters' expressions of a stack with three layers against that of a stack with two layers, we note that the magnetoelectric coupling effect vanishes while the artificial magnetism can still be achieved in a centre-symmetric periodic structure. Furthermore, we numerically check the effective parameters through the dispersion law and transmission property of a stack with two dielectric layers against that of an effective bianisotropic medium: they are in good agreement throughout the low-frequency (acoustic) band until the first stop band, where the analyticity of the logarithm function of the transfer matrix () breaks down. PMID:24101891

  3. Carbon/ternary alloy/carbon optical stack on mylar as an optical data storage medium to potentially replace magnetic tape.

    Science.gov (United States)

    Wang, Hao; Lunt, Barry M; Gates, Richard J; Asplund, Matthew C; Shutthanandan, V; Davis, Robert C; Linford, Matthew R

    2013-09-11

    A novel write-once-read-many (WORM) optical stack on Mylar tape is proposed as a replacement for magnetic tape for archival data storage. This optical tape contains a cosputtered bismuth-tellurium-selenium (BTS) alloy as the write layer sandwiched between thin, protective films of reactively sputtered carbon. The composition and thickness of the BTS layer were confirmed by Rutherford Backscattering (RBS) and atomic force microscopy (AFM), respectively. The C/BTS/C stack on Mylar was written to/marked by 532 nm laser pulses. Under the same conditions, control Mylar films without the optical stack were unaffected. Marks, which showed craters/movement of the write material, were characterized by optical microscopy and AFM. The threshold laser powers for making marks on C/BTS/C stacks with different thicknesses were explored. Higher quality marks were made with a 60× objective compared to a 40× objective in our marking apparatus. The laser writing process was simulated with COMSOL.

  4. Carbon/Ternary Alloy/Carbon Optical Stack on Mylar as an Optical Data Storage Medium to Potentially Replace Magnetic Tape

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hao; Lunt, Barry M.; Gates, Richard J.; Asplund, Matthew C.; Shutthanandan, V.; Davis, Robert C.; Linford, Matthew R.

    2013-09-11

    A novel write-once-read-many (WORM) optical stack on Mylar tape is proposed as a replacement for magnetic tape for archival data storage. This optical tape contains a cosputtered bismuth–tellurium–selenium (BTS) alloy as the write layer sandwiched between thin, protective films of reactively sputtered carbon. The composition and thickness of the BTS layer were confirmed by Rutherford Backscattering (RBS) and atomic force microscopy (AFM), respectively. The C/BTS/C stack on Mylar was written to/marked by 532 nm laser pulses. Under the same conditions, control Mylar films without the optical stack were unaffected. Marks, which showed craters/movement of the write material, were characterized by optical microscopy and AFM. The threshold laser powers for making marks on C/BTS/C stacks with different thicknesses were explored. Higher quality marks were made with a 60× objective compared to a 40× objective in our marking apparatus. Finally, the laser writing process was simulated with COMSOL.

  5. Security Issues in the Android Cross-Layer Architecture

    OpenAIRE

    Armando, Alessandro; Merlo, Alessio; Verderame, Luca

    2012-01-01

    The security of Android has been recently challenged by the discovery of a number of vulnerabilities involving different layers of the Android stack. We argue that such vulnerabilities are largely related to the interplay among layers composing the Android stack. Thus, we also argue that such interplay has been underestimated from a security point-of-view and a systematic analysis of the Android interplay has not been carried out yet. To this aim, in this paper we provide a simple model of th...

  6. StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks

    OpenAIRE

    Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris

    2017-01-01

    Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...

  7. Post-test characterization of a solid oxide fuel cell stack operated for more than 30,000 hours: The cell

    Science.gov (United States)

    Menzler, Norbert H.; Sebold, Doris; Guillon, Olivier

    2018-01-01

    A four-layer solid oxide fuel cell stack with planar anode-supported cells was operated galvanostatically at 700 °C and 0.5Acm-2 for nearly 35,000 h. One of the four planes started to degrade more rapidly after ∼28,000 h and finally more progressively after ∼33,000 h. The stack was then shut down and a post-test analysis was carefully performed. The cell was characterized with respect to cathodic impurities and clarification of the reason(s) for failure. Wet chemical analysis revealed very low chromium incorporation into the cathode. However, SEM and TEM observations on polished and fractured surfaces showed catastrophic failure in the degraded layer. The cathode-barrier-electrolyte cell layer system delaminated from the entire cell over large areas. The source of delamination was the formation of a porous, sponge-like secondary phase consisting of zirconia, yttria and manganese (oxide). Large secondary phase islands grew from the electrolyte-anode interface towards the anode and cracked the bonding between both layers. The manganese originated from the contact or protection layers used on the air side. This stack result shows that volatile species - in this case manganese - should be avoided, especially when long-term applications are envisaged.

  8. STACKING ON COMMON REFLECTION SURFACE WITH MULTIPARAMETER TRAVELTIME

    Directory of Open Access Journals (Sweden)

    Montes V. Luis A.

    2006-12-01

    Full Text Available Commonly seismic images are displayed in time domain because the model in depth can be known only in well logs. To produce seismic sections, pre and post stack processing approaches use time or depth velocity models whereas the common reflection method does not, instead it requires a set of parameters established for the first layer. A set of synthetic data of an anticline model, with sources and receivers placed on a flat topography, was used to observe the performance of this method. As result, a better reflector recovering compared against conventional processing sequence was observed.
    The procedure was extended to real data, using a dataset acquired on a zone characterized by mild topography and quiet environment reflectors in the Eastern Colombia planes, observing an enhanced and a better continuity of the reflectors in the CRS stacked section.

  9. A Urea Biosensor from Stacked Sol-Gel Films with Immobilized Nile Blue Chromoionophore and Urease Enzyme

    Directory of Open Access Journals (Sweden)

    Musa Ahmad

    2007-10-01

    Full Text Available An optical urea biosensor was fabricated by stacking several layers of sol-gelfilms. The stacking of the sol-gel films allowed the immobilization of a Nile Bluechromoionophore (ETH 5294 and urease enzyme separately without the need of anychemical attachment procedure. The absorbance response of the biosensor was monitoredat 550 nm, i.e. the deprotonation of the chromoionophore. This multi-layer sol-gel filmformat enabled higher enzyme loading in the biosensor to be achieved. The urea opticalbiosensor constructed from three layers of sol-gel films that contained urease demonstrateda much wider linear response range of up to 100 mM urea when compared with biosensorsthat constructed from 1-2 layers of films. Analysis of urea in urine samples with thisoptical urea biosensor yielded results similar to that determined by a spectrophotometricmethod using the reagent p-dimethylaminobenzaldehyde (R2 = 0.982, n = 6. The averagerecovery of urea from urine samples using this urea biosensor is approximately 103%.

  10. A Urea Biosensor from Stacked Sol-Gel Films with Immobilized Nile Blue Chromoionophore and Urease Enzyme.

    Science.gov (United States)

    Alqasaimeh, Muawia Salameh; Heng, Lee Yook; Ahmad, Musa

    2007-10-11

    An optical urea biosensor was fabricated by stacking several layers of sol-gelfilms. The stacking of the sol-gel films allowed the immobilization of a Nile Bluechromoionophore (ETH 5294) and urease enzyme separately without the need of anychemical attachment procedure. The absorbance response of the biosensor was monitoredat 550 nm, i.e. the deprotonation of the chromoionophore. This multi-layer sol-gel filmformat enabled higher enzyme loading in the biosensor to be achieved. The urea opticalbiosensor constructed from three layers of sol-gel films that contained urease demonstrateda much wider linear response range of up to 100 mM urea when compared with biosensorsthat constructed from 1-2 layers of films. Analysis of urea in urine samples with thisoptical urea biosensor yielded results similar to that determined by a spectrophotometricmethod using the reagent p-dimethylaminobenzaldehyde (R² = 0.982, n = 6). The averagerecovery of urea from urine samples using this urea biosensor is approximately 103%.

  11. Hidden symmetries in N-layer dielectric stacks

    Science.gov (United States)

    Liu, Haihao; Shoufie Ukhtary, M.; Saito, Riichiro

    2017-11-01

    The optical properties of a multilayer system with arbitrary N layers of dielectric media are investigated. Each layer is one of two dielectric media, with a thickness one-quarter the wavelength of light in that medium, corresponding to a central frequency f 0. Using the transfer matrix method, the transmittance T is calculated for all possible 2 N sequences for small N. Unexpectedly, it is found that instead of 2 N different values of T at f 0 (T 0), there are only (N/2+1) discrete values of T 0, for even N, and (N + 1) for odd N. We explain this high degeneracy in T 0 values by finding symmetry operations on the sequences that do not change T 0. Analytical formulae were derived for the T 0 values and their degeneracies as functions of N and an integer parameter for each sequence we call ‘charge’. Additionally, the bandwidth at f 0 and filter response of the transmission spectra are investigated, revealing asymptotic behavior at large N.

  12. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  13. Friedel Transition in Layered Superconductors

    International Nuclear Information System (INIS)

    Dzierzawa, M.; Zamora, M.; Baeriswyl, D.; Bagnoud, X.

    1996-01-01

    Weakly coupled superconducting layers are described by the anisotropic 3D XY model. A low-temperature layer decoupling due to a proliferation of fluxons between planes, as proposed by Friedel, does not occur. The same is true for a periodic superlattice of high and low T c layers, although the interplane coherence can become extremely weak. On the other hand a true layer decoupling is found for a random stack. copyright 1996 The American Physical Society

  14. L1{sub 0} stacked binaries as candidates for hard-magnets. FePt, MnAl and MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Yu-ichiro [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Applied Physics, The University of Tokyo (Japan); Madjarova, Galia [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physical Chemistry, Faculty of Chemistry and Pharmacy, Sofia University (Bulgaria); Flores-Livas, Jose A. [Department of Physics, Universitaet Basel (Switzerland); Dewhurst, J.K.; Gross, E.K.U. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Felser, C. [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Sharma, S. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physics, Indian Institute of Technology, Roorkee, Uttarkhand (India)

    2017-08-15

    We present a novel approach for designing new hard magnets by forming stacks of existing binary magnets to enhance the magneto crystalline anisotropy. This is followed by an attempt at reducing the amount of expensive metal in these stacks by replacing it with cheaper metal with similar ionic radius. This strategy is explored using examples of FePt, MnAl and MnGa. In this study a few promising materials are suggested as good candidates for hard magnets: stacked binary FePt{sub 2}MnGa{sub 2} in structure where each magnetic layer is separated by two non-magnetic layers, FePtMnGa and FePtMnAl in hexagonally distorted Heusler structures and FePt{sub 0.5}Ti{sub 0.5}MnAl. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. OpenStack cloud security

    CERN Document Server

    Locati, Fabio Alessandro

    2015-01-01

    If you are an OpenStack administrator or developer, or wish to build solutions to protect your OpenStack environment, then this book is for you. Experience of Linux administration and familiarity with different OpenStack components is assumed.

  16. Towards efficient next generation light sources: combined solution processed and evaporated layers for OLEDs

    Science.gov (United States)

    Hartmann, D.; Sarfert, W.; Meier, S.; Bolink, H.; García Santamaría, S.; Wecker, J.

    2010-05-01

    Typically high efficient OLED device structures are based on a multitude of stacked thin organic layers prepared by thermal evaporation. For lighting applications these efficient device stacks have to be up-scaled to large areas which is clearly challenging in terms of high through-put processing at low-cost. One promising approach to meet cost-efficiency, high through-put and high light output is the combination of solution and evaporation processing. Moreover, the objective is to substitute as many thermally evaporated layers as possible by solution processing without sacrificing the device performance. Hence, starting from the anode side, evaporated layers of an efficient white light emitting OLED stack are stepwise replaced by solution processable polymer and small molecule layers. In doing so different solutionprocessable hole injection layers (= polymer HILs) are integrated into small molecule devices and evaluated with regard to their electro-optical performance as well as to their planarizing properties, meaning the ability to cover ITO spikes, defects and dust particles. Thereby two approaches are followed whereas in case of the "single HIL" approach only one polymer HIL is coated and in case of the "combined HIL" concept the coated polymer HIL is combined with a thin evaporated HIL. These HIL architectures are studied in unipolar as well as bipolar devices. As a result the combined HIL approach facilitates a better control over the hole current, an improved device stability as well as an improved current and power efficiency compared to a single HIL as well as pure small molecule based OLED stacks. Furthermore, emitting layers based on guest/host small molecules are fabricated from solution and integrated into a white hybrid stack (WHS). Up to three evaporated layers were successfully replaced by solution-processing showing comparable white light emission spectra like an evaporated small molecule reference stack and lifetime values of several 100 h.

  17. Measurement of relative depth-dose distribution in radiochromic film dosimeters irradiated with 43-70 keV electron beam for industrial application

    Science.gov (United States)

    Matsui, Shinjiro; Hattori, Takeaki; Nonaka, Takashi; Watanabe, Yuki; Morita, Ippei; Kondo, Junichi; Ishikawa, Masayoshi; Mori, Yoshitaka

    2018-05-01

    The relative dose in a layer, which is thinner than the thickness of the dosimeter is evaluated using simulated depth-dose distributions, and the measured responses of dosimeters with acceleration voltages from 43 to 70 kV, via ultra-low-energy electron beam (ULEB) irradiation. By stacking thin film dosimeters, we confirmed that the simulated depth-dose distributions coincided with the measured depth-dose curve within the measurement uncertainty (k = 2). Using the measurement dose of the 47 μm dosimeter and the simulated depth-dose distribution, the dose of 11 μm dosimeters in the surface was evaluated within the measurement uncertainty (k = 2). We also verified the effectiveness of this method for a thinner layer by changing the acceleration voltage of the irradiation source. We evaluated the relative dose for an adjusted depth of energy deposition from 4.4 μm to 22.8 μm. As a result, this method was found to be effective for a thickness, which is less than the thickness of the dosimeter. When irradiation conditions are well known with accuracy, using the confirmed relative depth-dose distributions across any dosimeter thickness range, a dose evaluation, in several μm steps will possibly improve the design of industrial ULEB processes.

  18. Dual-layer ultrathin film optics: I. Theory and analysis

    International Nuclear Information System (INIS)

    Wang, Qian; Lim, Kim Peng

    2015-01-01

    This paper revisits dual-layer ultrathin film optics, which can be used for functional graded refractive index thin film stack. We present the detailed derivation including s-polarized and p-polarized light under arbitrary incidence angle showing the equivalence between the dual-layer ultrathin films and a negative birefringent thin film and also the approximations made during the derivation. Analysis of the approximations shows the influence of thickness of dual-layer thin films, the incidence angle and desired refractive index of the birefringent film. Numerical comparison between the titanium dioxide/aluminum oxide based dual-layer ultrathin film stack and the equivalent birefringent film verifies the theoretical analysis. The detailed theoretical study and numerical comparison provide a physical insight and design guidelines for dual-layer ultrathin film based optical devices. (paper)

  19. Numerical model for atmospheric diffusion analysis and evaluation of effective dose for safety analysis

    International Nuclear Information System (INIS)

    Sada, Koichi; Michioka, Takenobu; Ichikawa, Yoichi; Komiyama, Sumito

    2009-01-01

    A numerical simulation method has been developed to predict atmospheric flow and stack gas diffusion, considering the buildings and complex terrain located near and relatively far from a stack, respectively. The turbulence closure technique was used for flow calculation, some calculation grids on the ground near a stack were treated as buildings, and stack gas diffusion was predicted using the Lagrangian particle model. The calculated flow and stack gas diffusion results were compared with those obtained by wind tunnel experiments under actual terrain containing buildings. Effective stack height was estimated by comparing the surface concentration along the plume axis with those under a flat-plate condition, and it was apparent that the effective stack heights estimated by calculations were almost the same as those obtained by the wind tunnel experiment. Then, the effective dose and relative concentration of stack gas were calculated using the effective stack heights obtained by a numerical model. Almost the same effective dose and relative concentration were obtained when compared with those using the effective stack height obtained by wind tunnel experiment. (author)

  20. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  1. Defining the stack for service delivery models and interoperability in the internet of things: A practical case with OpenIoT-VDK

    OpenAIRE

    Serrano, M.; Quoc, H.N.M.; Phuoc, D.L.; Hauswirth, M.; Soldatos, J.; Kefalakis, N.; Jayaraman, P.P.; Zaslavsky, A.

    2015-01-01

    This paper introduces the stack for service delivery models and interoperability in the Internet of Things. The main characteristics and functional layers of the IoT stack are described. The applicability of the IoT stack is described based on particular use cases and deployed pilots. The validation of the IoT stack in terms of functionality and adaptation at different IoT particular areas is based on the Virtual Development Kit (VDK) developed and implemented within the framework of the Open...

  2. Characterizing edge and stacking structures of exfoliated graphene by photoelectron diffraction

    International Nuclear Information System (INIS)

    Matsui, Fumihiko; Ishii, Ryo; Matsuda, Hiroyuki; Morita, Makoto; Kitagawa, Satoshi; Koh, Shinji; Daimon, Hiroshi; Matsushita, Tomohiro

    2013-01-01

    The two-dimensional C 1s photoelectron intensity angular distributions (PIADs) and spectra of exfoliated graphene flakes and crystalline graphite were measured using a focused soft X-ray beam. Suitable graphene samples were selected by thickness characterization using Raman spectromicroscopy after transferring mechanically exfoliated graphene flakes onto a 90-nm-thick SiO 2 film. In every PIAD, a Kagomé interference pattern was observed, particularly clearly in the monolayer graphene PIAD. Its origin is the overlap of the diffraction rings formed by an in-plane C-C bond honeycomb lattice. Thus, the crystal orientation of each sample can be determined. In the case of bilayer graphene, PIAD was threefold-symmetric, while those of monolayer graphene and crystalline graphite were sixfold-symmetric. This is due to the stacking structure of bilayer graphene. From comparisons with the multiple scattering PIAD simulation results, the way of layer stacking as well as the termination types in the edge regions of bilayer graphene flakes were determined. Furthermore, two different C 1s core levels corresponding to the top and bottom layers of bilayer graphene were identified. A chemical shift to a higher binding energy by 0.25 eV for the bottom layer was attributed to interfacial interactions. (author)

  3. Semiconductor Three-Dimensional Photonic Crystals with Novel Layer-by-Layer Structures

    Directory of Open Access Journals (Sweden)

    Satoshi Iwamoto

    2016-05-01

    Full Text Available Three-dimensional photonic crystals (3D PhCs are a fascinating platform for manipulating photons and controlling their interactions with matter. One widely investigated structure is the layer-by-layer woodpile structure, which possesses a complete photonic bandgap. On the other hand, other types of 3D PhC structures also offer various possibilities for controlling light by utilizing the three dimensional nature of structures. In this article, we discuss our recent research into novel types of layer-by-layer structures, including the experimental demonstration of a 3D PhC nanocavity formed in a <110>-layered diamond structure and the realization of artificial optical activity in rotationally stacked woodpile structures.

  4. Assessment of doses caused by electrons in thin layers of tissue-equivalent materials, using MCNP.

    Science.gov (United States)

    Heide, Bernd

    2013-10-01

    Absorbed doses caused by electron irradiation were calculated with Monte Carlo N-Particle transport code (MCNP) for thin layers of tissue-equivalent materials. The layers were so thin that the calculation of energy deposition was on the border of the scope of MCNP. Therefore, in this article application of three different methods of calculation of energy deposition is discussed. This was done by means of two scenarios: in the first one, electrons were emitted from the centre of a sphere of water and also recorded in that sphere; and in the second, an irradiation with the PTB Secondary Standard BSS2 was modelled, where electrons were emitted from an (90)Sr/(90)Y area source and recorded inside a cuboid phantom made of tissue-equivalent material. The speed and accuracy of the different methods were of interest. While a significant difference in accuracy was visible for one method in the first scenario, the difference in accuracy of the three methods was insignificant for the second one. Considerable differences in speed were found for both scenarios. In order to demonstrate the need for calculating the dose in thin small zones, a third scenario was constructed and simulated as well. The third scenario was nearly equal to the second one, but a pike of lead was assumed to be inside the phantom in addition. A dose enhancement (caused by the pike of lead) of ∼113 % was recorded for a thin hollow cylinder at a depth of 0.007 cm, which the basal-skin layer is referred to in particular. Dose enhancements between 68 and 88 % were found for a slab with a radius of 0.09 cm for all depths. All dose enhancements were hardly noticeable for a slab with a cross-sectional area of 1 cm(2), which is usually applied to operational radiation protection.

  5. Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2

    Science.gov (United States)

    Qiao, Xiao-Fen; Wu, Jiang-Bin; Zhou, Linwei; Qiao, Jingsi; Shi, Wei; Chen, Tao; Zhang, Xin; Zhang, Jun; Ji, Wei; Tan, Ping-Heng

    2016-04-01

    Anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and application potential, offer one more dimension than isotropic 2D materials to tune their physical properties. Various physical properties of 2D multi-layer materials are modulated by varying their stacking orders owing to significant interlayer vdW coupling. Multilayer rhenium disulfide (ReS2), a representative anisotropic 2D material, was expected to be randomly stacked and lack interlayer coupling. Here, we demonstrate two stable stacking orders, namely isotropic-like (IS) and anisotropic-like (AI) N layer (NL, N > 1) ReS2 are revealed by ultralow- and high-frequency Raman spectroscopy, photoluminescence and first-principles density functional theory calculation. Two interlayer shear modes are observed in AI-NL-ReS2 while only one shear mode appears in IS-NL-ReS2, suggesting anisotropic- and isotropic-like stacking orders in IS- and AI-NL-ReS2, respectively. This explicit difference in the observed frequencies identifies an unexpected strong interlayer coupling in IS- and AI-NL-ReS2. Quantitatively, the force constants of them are found to be around 55-90% of those of multilayer MoS2. The revealed strong interlayer coupling and polytypism in multi-layer ReS2 may stimulate future studies on engineering physical properties of other anisotropic 2D materials by stacking orders.Anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and application potential, offer one more dimension than isotropic 2D materials to tune their physical properties. Various physical properties of 2D multi-layer materials are modulated by varying their stacking orders owing to significant interlayer vdW coupling. Multilayer rhenium disulfide (ReS2), a representative anisotropic 2D material, was expected to be randomly stacked and lack interlayer coupling. Here, we demonstrate two stable stacking orders, namely isotropic-like (IS) and

  6. Vertically stacked nanocellulose tactile sensor.

    Science.gov (United States)

    Jung, Minhyun; Kim, Kyungkwan; Kim, Bumjin; Lee, Kwang-Jae; Kang, Jae-Wook; Jeon, Sanghun

    2017-11-16

    Paper-based electronic devices are attracting considerable attention, because the paper platform has unique attributes such as flexibility and eco-friendliness. Here we report on what is claimed to be the firstly fully integrated vertically-stacked nanocellulose-based tactile sensor, which is capable of simultaneously sensing temperature and pressure. The pressure and temperature sensors are operated using different principles and are stacked vertically, thereby minimizing the interference effect. For the pressure sensor, which utilizes the piezoresistance principle under pressure, the conducting electrode was inkjet printed on the TEMPO-oxidized-nanocellulose patterned with micro-sized pyramids, and the counter electrode was placed on the nanocellulose film. The pressure sensor has a high sensitivity over a wide range (500 Pa-3 kPa) and a high durability of 10 4 loading/unloading cycles. The temperature sensor combines various materials such as poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), silver nanoparticles (AgNPs) and carbon nanotubes (CNTs) to form a thermocouple on the upper nanocellulose layer. The thermoelectric-based temperature sensors generate a thermoelectric voltage output of 1.7 mV for a temperature difference of 125 K. Our 5 × 5 tactile sensor arrays show a fast response, negligible interference, and durable sensing performance.

  7. Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-15

    Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

  8. Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

    International Nuclear Information System (INIS)

    Mukhopadhyay, A.; Banerjee, L.; Sengupta, A.; Rahaman, H.

    2015-01-01

    We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects

  9. Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com; Banerjee, L.; Sengupta, A.; Rahaman, H. [School of VLSI Technology, IIEST, Shibpur, Howrah 711103 (India)

    2015-12-14

    We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.

  10. Se interlayer in CIGS absorption layer for solar cell devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Kyu; Sim, Jae-Kwan [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Kissinger, N.J. Suthan [Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail 10074 (Saudi Arabia); Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of)

    2015-06-05

    Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V{sub oc}. Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance.

  11. Se interlayer in CIGS absorption layer for solar cell devices

    International Nuclear Information System (INIS)

    Lee, Seung-Kyu; Sim, Jae-Kwan; Kissinger, N.J. Suthan; Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon; Lee, Cheul-Ro

    2015-01-01

    Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V oc . Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance

  12. The impact of stack geometry and mean pressure on cold end temperature of stack in thermoacoustic refrigeration systems

    Science.gov (United States)

    Wantha, Channarong

    2018-02-01

    This paper reports on the experimental and simulation studies of the influence of stack geometries and different mean pressures on the cold end temperature of the stack in the thermoacoustic refrigeration system. The stack geometry was tested, including spiral stack, circular pore stack and pin array stack. The results of this study show that the mean pressure of the gas in the system has a significant impact on the cold end temperature of the stack. The mean pressure of the gas in the system corresponds to thermal penetration depth, which results in a better cold end temperature of the stack. The results also show that the cold end temperature of the pin array stack decreases more than that of the spiral stack and circular pore stack geometry by approximately 63% and 70%, respectively. In addition, the thermal area and viscous area of the stack are analyzed to explain the results of such temperatures of thermoacoustic stacks.

  13. OpenStack essentials

    CERN Document Server

    Radez, Dan

    2015-01-01

    If you need to get started with OpenStack or want to learn more, then this book is your perfect companion. If you're comfortable with the Linux command line, you'll gain confidence in using OpenStack.

  14. Initiation and Performance of a Coating for Countering Chromium Poisoning in a SOFC-stack

    DEFF Research Database (Denmark)

    Nielsen, Karsten Agersted; Persson, Åsa Helen; Beeaff, Dustin

    2007-01-01

    Minimising transport of chromium from the metallic interconnect (e.g. of Crofer 22APU) to the cathode in a planar solid oxide fuel cell is done by application of a coating between the two parts. The coating is applied by slurry coating, and taken through stack initialisation it transforms...... into a stable and densely grown barrier layer, which minimises both the evaporation of chromium from the interconnect surface and the electrical contact resistance between the interconnect and the cathode. Between comparable stack element tests with and without coatings at 750 degrees C, the degradation rate...

  15. A comparative density functional study on electrical properties of layered penta-graphene

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhi Gen, E-mail: yuzg@ihpc.a-star.edu.sg; Zhang, Yong-Wei, E-mail: zhangyw@ihpc.a-star.edu.sg [Institute of High Performance Computing, Singapore 138632 (Singapore)

    2015-10-28

    We present a comparative study of the influence of the number of layers, the biaxial strain in the range of −3% to 3%, and the stacking misalignments on the electronic properties of a new 2D carbon allotrope, penta-graphene (PG), based on hybrid-functional method within the density functional theory (DFT). In comparison with local exchange-correlation approximation in the DFT, the hybrid-functional provides an accurate description on the degree of p{sub z} orbitals localization and bandgap. Importantly, the predicted bandgap of few-layer PG has a weak layer dependence. The bandgap of monolayer PG is 3.27 eV, approximately equal to those of GaN and ZnO; and the bandgap of few-layer PG decreases slowly with the number of layers (N) and converge to 2.57 eV when N ≥ 4. Our calculations using HSE06 functional on few-layer PG reveal that bandgap engineering by stacking misalignment can further tune the bandgap down to 1.37 eV. Importantly, there is no direct-to-indirect bandgap transition in PG by varying strain, layer number, and stacking misalignment. Owing to its tunable, robustly direct, and wide bandgap characteristics, few-layer PG is promising for optoelectronic and photovoltaic applications.

  16. Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2018-04-01

    The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

  17. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  18. Fine-scale structure of the mid-mantle characterised by global stacks of PP precursors

    Science.gov (United States)

    Bentham, H. L. M.; Rost, S.; Thorne, M. S.

    2017-08-01

    Subduction zones are likely a major source of compositional heterogeneities in the mantle, which may preserve a record of the subduction history and mantle convection processes. The fine-scale structure associated with mantle heterogeneities can be studied using the scattered seismic wavefield that arrives as coda to or as energy preceding many body wave arrivals. In this study we analyse precursors to PP by creating stacks recorded at globally distributed stations. We create stacks aligned on the PP arrival in 5° distance bins (with range 70-120°) from 600 earthquakes recorded at 193 stations stacking a total of 7320 seismic records. As the energy trailing the direct P arrival, the P coda, interferes with the PP precursors, we suppress the P coda by subtracting a best fitting exponential curve to this energy. The resultant stacks show that PP precursors related to scattering from heterogeneities in the mantle are present for all distances. Lateral variations are explored by producing two regional stacks across the Atlantic and Pacific hemispheres, but we find only negligible differences in the precursory signature between these two regions. The similarity of these two regions suggests that well mixed subducted material can survive at upper and mid-mantle depth. To describe the scattered wavefield in the mantle, we compare the global stacks to synthetic seismograms generated using a Monte Carlo phonon scattering technique. We propose a best-fitting layered heterogeneity model, BRT2017, characterised by a three layer mantle with a background heterogeneity strength (ɛ = 0.8%) and a depth-interval of increased heterogeneity strength (ɛ = 1%) between 1000 km and 1800 km. The scalelength of heterogeneity is found to be 8 km throughout the mantle. Since mantle heterogeneity of 8 km scale may be linked to subducted oceanic crust, the detection of increased heterogeneity at mid-mantle depths could be associated with stalled slabs due to increases in viscosity

  19. Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

    Science.gov (United States)

    Owerre, S A

    2016-11-30

    In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

  20. Taxonomy of multi-focal nematode image stacks by a CNN based image fusion approach.

    Science.gov (United States)

    Liu, Min; Wang, Xueping; Zhang, Hongzhong

    2018-03-01

    In the biomedical field, digital multi-focal images are very important for documentation and communication of specimen data, because the morphological information for a transparent specimen can be captured in form of a stack of high-quality images. Given biomedical image stacks containing multi-focal images, how to efficiently extract effective features from all layers to classify the image stacks is still an open question. We present to use a deep convolutional neural network (CNN) image fusion based multilinear approach for the taxonomy of multi-focal image stacks. A deep CNN based image fusion technique is used to combine relevant information of multi-focal images within a given image stack into a single image, which is more informative and complete than any single image in the given stack. Besides, multi-focal images within a stack are fused along 3 orthogonal directions, and multiple features extracted from the fused images along different directions are combined by canonical correlation analysis (CCA). Because multi-focal image stacks represent the effect of different factors - texture, shape, different instances within the same class and different classes of objects, we embed the deep CNN based image fusion method within a multilinear framework to propose an image fusion based multilinear classifier. The experimental results on nematode multi-focal image stacks demonstrated that the deep CNN image fusion based multilinear classifier can reach a higher classification rate (95.7%) than that by the previous multilinear based approach (88.7%), even we only use the texture feature instead of the combination of texture and shape features as in the previous work. The proposed deep CNN image fusion based multilinear approach shows great potential in building an automated nematode taxonomy system for nematologists. It is effective to classify multi-focal image stacks. Copyright © 2018 Elsevier B.V. All rights reserved.

  1. Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

    Science.gov (United States)

    Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

    2014-09-01

    We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

  2. DESIGN OF MULTILAYER APERTURE COUPLED STACKED MICROSTRIP PATCH ANTENNA FOR WLAN APPLICATIONS

    Directory of Open Access Journals (Sweden)

    P. Jothilakshmi

    2015-10-01

    Full Text Available One of the major drawbacks of microstrip patch antenna is its narrow bandwidth. The solution of this problem is to use aperture coupled stacked micro strip patch antenna. The antenna uses a combination of aperture coupled feeding technique and multi- layer radiating patch in order for the radiating elements are increase the gain bandwidth. The ‘I’ and ‘H’ shaped aperture slots are etched onto the ground plane. It is used to transfer the energy from feed line to stacked patch. A variation of the feed line length controls the selected aperture slots to be active. The waves from the selected activated aperture slots will radiate to particular radiating patch and achieve the desired resonant frequency. The air gap is used to avoid coupling loss between the aperture slots and stacked patches. The observed simulated and measured results show that the proposed antenna structure resonated at 2.51 GHz frequency with reduced return loss and optimum voltage standing wave ratio.

  3. Performance of PZT stacks under high-field electric cycling at various temperatures in heavy-duty diesel engine fuel injectors

    Science.gov (United States)

    Wang, Hong; Lee, Sung-Min; Lin, Hua-Tay; Stafford, Randy

    2016-04-01

    Testing and characterization of large prototype lead zirconate titanate (PZT) stacks present substantial technical challenges to electronic systems. The work in this study shows that an alternative approach can be pursued by using subunits extracted from prototype stacks. Piezoelectric and dielectric integrity was maintained even though the PZT plate specimens experienced an additional loading process involved with the extraction after factory poling. Extracted 10-layer plate specimens were studied by an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 108 cycles, both at room temperature (22°C) and at 50°C. The elevated temperature had a defined impact on the fatigue of PZT stacks. About 48 and 28% reductions were observed in the piezoelectric and dielectric coefficients, respectively, after 108 cycles at 50°C, compared with reductions of 25 and 15% in the respective coefficients at 22°C. At the same time, the loss tangent varied to a limited extent. The evolution of PZT-electrode interfacial layers or nearby dielectric layers should account for the difference in the fatigue rates of piezoelectric and dielectric coefficients. But the basic contribution to observed fatigue may result from the buildup of a bias field that finally suppressed the motion of the domain walls. Finally, monitoring of dielectric coefficients can be an effective tool for on-line lifetime prediction of PZT stacks in service if a failure criterion is defined properly.

  4. Modeling fuel cell stack systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J H [Los Alamos National Lab., Los Alamos, NM (United States); Lalk, T R [Dept. of Mech. Eng., Texas A and M Univ., College Station, TX (United States)

    1998-06-15

    A technique for modeling fuel cell stacks is presented along with the results from an investigation designed to test the validity of the technique. The technique was specifically designed so that models developed using it can be used to determine the fundamental thermal-physical behavior of a fuel cell stack for any operating and design configuration. Such models would be useful tools for investigating fuel cell power system parameters. The modeling technique can be applied to any type of fuel cell stack for which performance data is available for a laboratory scale single cell. Use of the technique is demonstrated by generating sample results for a model of a Proton Exchange Membrane Fuel Cell (PEMFC) stack consisting of 125 cells each with an active area of 150 cm{sup 2}. A PEMFC stack was also used in the verification investigation. This stack consisted of four cells, each with an active area of 50 cm{sup 2}. Results from the verification investigation indicate that models developed using the technique are capable of accurately predicting fuel cell stack performance. (orig.)

  5. Assessment for potential radionuclide emissions from stacks and diffuse and fugitive sources on the Hanford Site

    International Nuclear Information System (INIS)

    Davis, W.E.; Schmidt, J.W.; Gleckler, B.P.; Rhoads, K.

    1995-06-01

    By using the six EPA-approved methods, instead of only the original back calculation method for assessing the 84 WHC registered stacks, the number of stacks requiring continuous monitoring was reduced from 32 to 19 stacks. The intercomparison between results showed that no correlation existed between back calculations and release fractions. Also the NDA, upstream air samples, and powder release fraction method results were at least three orders of magnitude lower then the back calculations results. The most surprising results of the assessment came from NDA. NDA was found to be an easy method for assessing potential emissions. For the nine stacks assessed by NDA, all nine of the stacks would have required continuous monitoring when assessed by back calculations. However, when NDA was applied all stacks had potential emissions that would cause an EDE below the > 0.1 mrem/y standard. Apparent DFs for the HEPA filter systems were calculated for eight nondesignated stacks with emissions above the detection limit. These apparent DFs ranged from 0.5 to 250. The EDE dose to the MEI was calculated to be 0.028 mrem/y for diffuse and fugitive emissions from the Hanford Sited. This is well below the > 0.1 mrem/y standard

  6. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  7. Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

    Energy Technology Data Exchange (ETDEWEB)

    Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V. [Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation); Chesnokov, Yu. M. [National Research Centre “Kurchatov Institute” (Russian Federation); Shemukhin, A. A.; Oreshko, A. P. [Moscow State University (Russian Federation)

    2017-03-15

    The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 10{sup 17} cm{sup –2} have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30–35% beneath. It is shown that the porous layer has the sharpest boundaries at a lower energy of implantable ions.

  8. Natural melanin composites by layer-by-layer assembly

    Science.gov (United States)

    Eom, Taesik; Shim, Bong Sub

    2015-04-01

    Melanin is an electrically conductive and biocompatible material, because their conjugated backbone structures provide conducting pathways from human skin, eyes, brain, and beyond. So there is a potential of using as materials for the neural interfaces and the implantable devices. Extracted from Sepia officinalis ink, our natural melanin was uniformly dispersed in mostly polar solvents such as water and alcohols. Then, the dispersed melanin was further fabricated to nano-thin layered composites by the layer-by-layer (LBL) assembly technique. Combined with polyvinyl alcohol (PVA), the melanin nanoparticles behave as an LBL counterpart to from finely tuned nanostructured films. The LBL process can adjust the smart performances of the composites by varying the layering conditions and sandwich thickness. We further demonstrated the melanin loading degree of stacked layers, combination nanostructures, electrical properties, and biocompatibility of the resulting composites by UV-vis spectrophotometer, scanning electron microscope (SEM), multimeter, and in-vitro cell test of PC12, respectively.

  9. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  10. Through-Silicon-Via Underfill Dispensing for 3D Die/Interposer Stacking

    Science.gov (United States)

    Le, Fuliang

    direction because this aligned configuration has the lowest risk to form an edge flood. In order to find a trade-off between short filling time and low risk of an edge flood, an optimized TSV pattern, including central/outer TSVs, is proposed for the underfill of a 3D chip stack. The central TSVs are set for a constant inflow to obtain a fast filling effect. The outer TSVs are set for free droplets to eliminate the potential edge flood during underfilling the area around the chip edges. The test vehicle for the underfill test is a four-layer die/interposer stack. In each layer, two flip chips are mounted beneath an interposer. The vertical-aligned configuration and the optimized TSV pattern are used in the test vehicle. In the underfill dispensing process, I-Pass edge dispensing is still used to fill the gaps beneath the bottom two layers. Afterwards, a constant inflow is dispensed into the central TSVs until the underfill flow reaches the chip edges. The remaining unfilled area is completed by dispensing free droplets into the outer TSVs. The underfill effect is inspected by acoustic scanning and cross-sections. Inspection results show that the underfill is completed without voids and the solder joints are well covered by an encapsulant. In addition, compared with other prevailing underfill methods, the fillet occupies less space on a substrate, leading to a rise in silicon packaging density.

  11. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  12. Macroscopic alignment of graphene stacks by Langmuir-Blodgett deposition of amphiphilic hexabenzocoronenes

    DEFF Research Database (Denmark)

    Laursen, B.W.; Nørgaard, K.; Reitzel, N.

    2004-01-01

    ). Grazing-incidence X-ray diffraction (GIXD) and X-ray reflectivity, both utilizing synchrotron radiation, show that these amphiphilic HBCs form well-defined Langmuir monolayers at the air-water interface, with pi-stacked columnar structure where the HBC cores are rotated around the surface normal...... and tilted relative to the water surface. The intercolumnar distance is 20 A. The HBCs are confined to a layer lying on top of the layer of polar groups that are in contact with the water subphase. Efficient transfer of the monolayer of the anthraquinone-substituted HBC derivative to hydrophobic quartz...

  13. A long-term stable power supply µDMFC stack for wireless sensor node applications

    International Nuclear Information System (INIS)

    Wu, Zonglin; Wang, Xiaohong; Li, Xiaozhao; Xu, Manqi; Liu, Litian

    2014-01-01

    In this paper, a passive, air-breathing four-cell micro direct methanol fuel cell (µDMFC) stack featuring a fuel delivery structure for long-term and stable power supply is designed, fabricated and tested. The fuel is reserved in a T-shaped tank and diffuses through the porous diffusion layer to the catalyst at the anode. A peak power density of 25.7 mW cm −2 and a maximum power output of 113 mW are achieved with 3 M methanol at room temperature, and the stack can produce 60 mW of power, even though only 5% fuel remains in the reservoir. Combined with a low-input dc–dc convertor, the stack can realize a stable and optional constant voltage output from 1 V–6 V. The stack successfully powered a heavy metal sensor node for water environment monitoring 12 d continuously, with consumption of 10 mL 5 M methanol solution. As such, it is believed to be applicable for powering wireless sensor nodes. (paper)

  14. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  15. Enhancement of mechanical and electrical properties of continuous-fiber-reinforced epoxy composites with stacked graphene

    OpenAIRE

    Naveh, Naum; Shepelev, Olga; Kenig, Samuel

    2017-01-01

    Impregnation of expandable graphite (EG) after thermal treatment with an epoxy resin containing surface-active agents (SAAs) enhanced the intercalation of epoxy monomer between EG layers and led to further exfoliation of the graphite, resulting in stacks of few graphene layers, so-called “stacked” graphene (SG). This process enabled electrical conductivity of cured epoxy/SG composites at lower percolation thresholds, and improved thermo-mechanical properties were measured with either Kevlar, ...

  16. Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer.

    Science.gov (United States)

    Pierucci, Debora; Brumme, Thomas; Girard, Jean-Christophe; Calandra, Matteo; Silly, Mathieu G; Sirotti, Fausto; Barbier, Antoine; Mauri, Francesco; Ouerghi, Abdelkarim

    2016-09-15

    The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Different spectra are observed and are attributed to the existence of two stable polytypes of trilayer: Bernal (ABA) and rhomboedreal (ABC) staking. Their electronic properties strongly depend on the charge transfer from the substrate. We show that the LDOS of ABC stacking shows an additional peak located above the Dirac point in comparison with the LDOS of ABA stacking. The observed LDOS features, reflecting the underlying symmetry of the two polytypes, were reproduced by explicit calculations within density functional theory (DFT) including the charge transfer from the substrate. These findings demonstrate the pronounced effect of stacking order and charge transfer on the electronic structure of trilayer or few layer graphene. Our approach represents a significant step toward understand the electronic properties of graphene layer under electrical field.

  17. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  18. Multilayer, Stacked Spiral Copper Inductors on Silicon with Micro-Henry Inductance Using Single-Level Lithography

    Directory of Open Access Journals (Sweden)

    Timothy Reissman

    2012-01-01

    Full Text Available We present copper structures composed of multilayer, stacked inductors (MLSIs with tens of micro-Henry inductance for use in low frequency (sub 100 MHz, power converter technology. Unique to this work is the introduction of single-level lithography over the traditional two-level approach to create each inductor layer. The result is a simplified fabrication process which results in a reduction in the number of lithography steps per inductor (metal layer and a reduction in the necessary alignment precision. Additionally, we show that this fabrication process yields strong adhesion amongst the layers, since even after a postprocess abrasion technique at the inner diameter of the inductors, no shearing occurs and connectivity is preserved. In total, three separate structures were fabricated using the single-level lithography approach, each with a three-layered, stacked inductor design but with varied geometries. Measured values for each of the structures were extracted, and the following results were obtained: inductance values of 24.74, 17.25, and 24.74 μH, self-resonances of 9.87, 5.72, and 10.58 MHz, and peak quality factors of 2.26, 2.05, and 4.6, respectively. These values are in good agreement with the lumped parameter model presented.

  19. Mastering OpenStack

    CERN Document Server

    Khedher, Omar

    2015-01-01

    This book is intended for system administrators, cloud engineers, and system architects who want to deploy a cloud based on OpenStack in a mid- to large-sized IT infrastructure. If you have a fundamental understanding of cloud computing and OpenStack and want to expand your knowledge, then this book is an excellent checkpoint to move forward.

  20. Multilayer stacks obtained by ion assisted EB PVD aimed at thermal barrier coating

    Energy Technology Data Exchange (ETDEWEB)

    Roos, E.; Maile, K.; Lyutovich, A. [Stuttgart Univ. (DE). Materialpruefungsanstalt (MPA)

    2010-07-01

    Thermal Barrier Coating (TBC) using Electron Beam Physical Vapour Deposition (EB PVD) is widely implemented, especially for aero-engine turbine blades. Generally, multilayer stacks are used for these aims. For the additional improvement of intermediate layers with graded transitions to the initial Ni-based alloy, the use of accelerated ions in the EBPVD-process is advantageous. The effect of the substrate bias potential, ion current density and deposition temperature on the structure and properties of Ti and Zr intermediate layers are investigated. The morphology of the films is studied using optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). It is found that the surface morphology becomes smoother with rising bias potential and decreasing ion current density. Measurements of Vicker's micro-hardness performed on these coatings have shown its increase with higher values of the bias and its reduction with the growing temperature. This effect is caused by the observed decrease in grain size and higher porosity of the films. A multilayer coating system Ni (based substrate)-Si-Si{sub x}Al{sub y}-Al with graded transitions between the layers is obtained using ion assisted EBPVD. Architecture of a multilayer stack for TBC with graded transitions is proposed. (orig.)

  1. The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

    International Nuclear Information System (INIS)

    Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

    2011-01-01

    We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

  2. Solid Oxide Fuel Cell Stack Diagnostics

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Barfod, Rasmus Gottrup

    As SOFC technology is moving closer to a commercial break through, methods to measure the “state-of-health” of operating stacks are becoming of increasing interest. This requires application of advanced methods for detailed electrical and electrochemical characterization during operation....... An operating stack is subject to compositional gradients in the gaseous reactant streams, and temperature gradients across each cell and across the stack, which complicates detailed analysis. Several experimental stacks from Topsoe Fuel Cell A/S were characterized using Electrochemical Impedance Spectroscopy...... in the hydrogen fuel gas supplied to the stack. EIS was used to examine the long-term behavior and monitor the evolution of the impedance of each of the repeating units and the whole stack. The observed impedance was analyzed in detail for one of the repeating units and the whole stack and the losses reported...

  3. Gain Enhancement of Low-Profile, Electrically Small Capacitive Feed Antennas Using Stacked Meander Lines

    Directory of Open Access Journals (Sweden)

    Kazuki Ide

    2010-01-01

    Full Text Available The present paper describes the gain enhancement of a small and low-profile linear antenna with capacitive feed (C-feed using three metallic layers. The antenna has very small leakage current on the outer conductor of the coaxial cable and can easily control the imaginary part of the input impedance. The gain of the stacked three-layer meander line antenna, with the meander line in the middle layer being opposite to that of the other two layers, has increased by around 7 dB compared to the single layered C-feed antenna. The antenna gain is discussed based on simulated and measured results, which demonstrates that the antenna has successfully achieved the acceptable impedance and sufficient gain for mobile terminals and RFID tags.

  4. ooi: OpenStack OCCI interface

    Directory of Open Access Journals (Sweden)

    Álvaro López García

    2016-01-01

    Full Text Available In this document we present an implementation of the Open Grid Forum’s Open Cloud Computing Interface (OCCI for OpenStack, namely ooi (Openstack occi interface, 2015  [1]. OCCI is an open standard for management tasks over cloud resources, focused on interoperability, portability and integration. ooi aims to implement this open interface for the OpenStack cloud middleware, promoting interoperability with other OCCI-enabled cloud management frameworks and infrastructures. ooi focuses on being non-invasive with a vanilla OpenStack installation, not tied to a particular OpenStack release version.

  5. ooi: OpenStack OCCI interface

    Science.gov (United States)

    López García, Álvaro; Fernández del Castillo, Enol; Orviz Fernández, Pablo

    In this document we present an implementation of the Open Grid Forum's Open Cloud Computing Interface (OCCI) for OpenStack, namely ooi (Openstack occi interface, 2015) [1]. OCCI is an open standard for management tasks over cloud resources, focused on interoperability, portability and integration. ooi aims to implement this open interface for the OpenStack cloud middleware, promoting interoperability with other OCCI-enabled cloud management frameworks and infrastructures. ooi focuses on being non-invasive with a vanilla OpenStack installation, not tied to a particular OpenStack release version.

  6. Investigation of Ruthenium Dissolution in Advanced Membrane Electrode Assemblies for Direct Methanol Based Fuel Cell Stacks

    Science.gov (United States)

    Valdez, Thomas I.; Firdosy, S.; Koel, B. E.; Narayanan, S. R.

    2005-01-01

    Dissolution of ruthenium was observed in the 80-cell stack. Duration testing was performed in single cell MEAs to determine the pathway of cell degradation. EDAX analysis on each of the single cell MEAs has shown that the Johnson Matthey commercial catalyst is stable in DMFC operation for 250 hours, no ruthenium dissolution was observed. Changes in the hydrophobicity of the cathode backing papers was minimum. Electrode polarization analysis revealed that the MEA performance loss is attributed to changes in the cathode catalyst layer. Ruthenium migration does not seem to occur during cell operation but can occur when methanol is absent from the anode compartment, the cathode compartment has access to air, and the cells in the stack are electrically connected to a load (Shunt Currents). The open-to-air cathode stack design allowed for: a) The MEAs to have continual access to oxygen; and b) The stack to sustain shunt currents. Ruthenium dissolution in a DMFC stack can be prevented by: a) Developing an internally manifolded stacks that seal reactant compartments when not in operation; b) Bringing the cell voltages to zero quickly when not in operation; and c) Limiting the total number of cells to 25 in an effort to limit shunt currents.

  7. Engineering the hypersonic phononic band gap of hybrid Bragg stacks.

    Science.gov (United States)

    Schneider, Dirk; Liaqat, Faroha; El Boudouti, El Houssaine; El Hassouani, Youssef; Djafari-Rouhani, Bahram; Tremel, Wolfgang; Butt, Hans-Jürgen; Fytas, George

    2012-06-13

    We report on the full control of phononic band diagrams for periodic stacks of alternating layers of poly(methyl methacrylate) and porous silica combining Brillouin light scattering spectroscopy and theoretical calculations. These structures exhibit large and robust on-axis band gaps determined by the longitudinal sound velocities, densities, and spacing ratio. A facile tuning of the gap width is realized at oblique incidence utilizing the vector nature of the elastic wave propagation. Off-axis propagation involves sagittal waves in the individual layers, allowing access to shear moduli at nanoscale. The full theoretical description discerns the most important features of the hypersonic one-dimensional crystals forward to a detailed understanding, a precondition to engineer dispersion relations in such structures.

  8. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    International Nuclear Information System (INIS)

    Sołtys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanisław

    2014-01-01

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking

  9. Stack gas treatment

    Science.gov (United States)

    Reeves, Adam A.

    1977-04-12

    Hot stack gases transfer contained heat to a gravity flow of pebbles treated with a catalyst, cooled stacked gases and a sulfuric acid mist is withdrawn from the unit, and heat picked up by the pebbles is transferred to air for combustion or other process. The sulfuric acid (or sulfur, depending on the catalyst) is withdrawn in a recovery unit.

  10. Local receptive field constrained stacked sparse autoencoder for classification of hyperspectral images.

    Science.gov (United States)

    Wan, Xiaoqing; Zhao, Chunhui

    2017-06-01

    As a competitive machine learning algorithm, the stacked sparse autoencoder (SSA) has achieved outstanding popularity in exploiting high-level features for classification of hyperspectral images (HSIs). In general, in the SSA architecture, the nodes between adjacent layers are fully connected and need to be iteratively fine-tuned during the pretraining stage; however, the nodes of previous layers further away may be less likely to have a dense correlation to the given node of subsequent layers. Therefore, to reduce the classification error and increase the learning rate, this paper proposes the general framework of locally connected SSA; that is, the biologically inspired local receptive field (LRF) constrained SSA architecture is employed to simultaneously characterize the local correlations of spectral features and extract high-level feature representations of hyperspectral data. In addition, the appropriate receptive field constraint is concurrently updated by measuring the spatial distances from the neighbor nodes to the corresponding node. Finally, the efficient random forest classifier is cascaded to the last hidden layer of the SSA architecture as a benchmark classifier. Experimental results on two real HSI datasets demonstrate that the proposed hierarchical LRF constrained stacked sparse autoencoder and random forest (SSARF) provides encouraging results with respect to other contrastive methods, for instance, the improvements of overall accuracy in a range of 0.72%-10.87% for the Indian Pines dataset and 0.74%-7.90% for the Kennedy Space Center dataset; moreover, it generates lower running time compared with the result provided by similar SSARF based methodology.

  11. A Time-predictable Stack Cache

    DEFF Research Database (Denmark)

    Abbaspour, Sahar; Brandner, Florian; Schoeberl, Martin

    2013-01-01

    Real-time systems need time-predictable architectures to support static worst-case execution time (WCET) analysis. One architectural feature, the data cache, is hard to analyze when different data areas (e.g., heap allocated and stack allocated data) share the same cache. This sharing leads to le...... of a cache for stack allocated data. Our port of the LLVM C++ compiler supports the management of the stack cache. The combination of stack cache instructions and the hardware implementation of the stack cache is a further step towards timepredictable architectures.......Real-time systems need time-predictable architectures to support static worst-case execution time (WCET) analysis. One architectural feature, the data cache, is hard to analyze when different data areas (e.g., heap allocated and stack allocated data) share the same cache. This sharing leads to less...... precise results of the cache analysis part of the WCET analysis. Splitting the data cache for different data areas enables composable data cache analysis. The WCET analysis tool can analyze the accesses to these different data areas independently. In this paper we present the design and implementation...

  12. A cross-layer communication framework for wireless networked control systems

    NARCIS (Netherlands)

    Israr, N.; Scanlon, W.G.; Irwin, G.W.

    2009-01-01

    This paper presents a robust, dynamic cross-layer wireless communication architecture for wireless networked control systems. Each layer in the proposed protocol architecture contributes to the overall goal of reliable, energy efficient communication. The protocol stack also features a

  13. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

    Directory of Open Access Journals (Sweden)

    E. A. Henriksen

    2012-01-01

    Full Text Available The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find both that the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau-level splittings due to a lifting of the valley degeneracy are clearly observed.

  14. A long-term stable power supply μDMFC stack for wireless sensor node applications

    International Nuclear Information System (INIS)

    Wu, Z L; Wang, X H; Teng, F; Li, X Z; Wu, X M; Liu, L T

    2013-01-01

    A passive, air-breathing 4-cell micro direct methanol fuel cell (μDMFC) stack is presented featured by a fuel delivery structure for a long-term and stable power supply. The fuel is reserved in a T shape tank and diffuses through the porous diffusion layer to the catalyst at anode. The stack has a maximum power output of 110mW with 3M methanol at room temperature and output a stable power even thought 5% fuel is the remained in reservoir. Its performance decreases less than 3% for 100 hours continuous work. As such, it is believed to be more applicable for powering the wireless sensor nodes

  15. Continued SOFC cell and stack technology and improved production methods

    Energy Technology Data Exchange (ETDEWEB)

    Wandel, M.; Brodersen, K.; Phair, J. (and others)

    2009-05-15

    . Different types of co-casting were tried and the results are very promising. The results indicate that upon proper development production price can be significantly lowered and better control on thickness and microstructure may be obtained. Lamination as a technique to produce half cells has been developed within this project and results showed that the technique gives good control over the various layers. The enhanced control on thickness made it possible to develop cells with even thinner anode support and thereby decreasing the material consumption and still maintain small cell curvature and low electrolyte leak-rate. New cathodes based on LSCF were screen printed onto standard half-cells and tested in a stack. The ASR of the cells was lowered compared to standard 2G production cells and also the degradation was improved. A 10 cell stack was assembled and is still operated - more than 3000 hr has now been reached. An improvement in ASR was also obtained for half-cells produced without MEK and DBP in the paste thereby combining a more environmentally production with improved performance. (LN)

  16. Electromagnetic waves in a topological insulator thin film stack: helicon-like wave mode and photonic band structure.

    Science.gov (United States)

    Inoue, Jun-ichi

    2013-09-09

    We theoretically explore the electromagnetic modes specific to a topological insulator superlattice in which topological and conventional insulator thin films are stacked periodically. In particular, we obtain analytic formulas for low energy mode that corresponds to a helicon wave, as well as those for photonic bands. We illustrate that the system can be modeled as a stack of quantum Hall layers whose conductivity tensors alternately change signs, and then we analyze the photonic band structures. This subject is a natural extension of a previous study by Tselis et al., which took into consideration a stack of identical quantum Hall layers but their discussion was limited into a low energy mode. Thus we provide analytic formulas for photonic bands and compare their features between the two systems. Our central findings in the topological insulator superlattice are that a low energy mode corresponding to a helicon wave has linear dispersion instead of the conventional quadratic form, and that a robust gapless photonic band appears although the system considered has spacial periodicity. In addition, we demonstrate that the photonic bands agree with the numerically calculated transmission spectra.

  17. Structure of kaolinite and influence of stacking faults: reconciling theory and experiment using inelastic neutron scattering analysis.

    Science.gov (United States)

    White, Claire E; Kearley, Gordon J; Provis, John L; Riley, Daniel P

    2013-05-21

    The structure of kaolinite at the atomic level, including the effect of stacking faults, is investigated using inelastic neutron scattering (INS) spectroscopy and density functional theory (DFT) calculations. The vibrational dynamics of the standard crystal structure of kaolinite, calculated using DFT (VASP) with normal mode analysis, gives good agreement with the experimental INS data except for distinct discrepancies, especially for the low frequency modes (200-400 cm(-1)). By generating several types of stacking faults (shifts in the a,b plane for one kaolinite layer relative to the adjacent layer), it is seen that these low frequency modes are affected, specifically through the emergence of longer hydrogen bonds (O-H⋯O) in one of the models corresponding to a stacking fault of -0.3151a - 0.3151b. The small residual disagreement between observed and calculated INS is assigned to quantum effects (which are not taken into account in the DFT calculations), in the form of translational tunneling of the proton in the hydrogen bonds, which lead to a softening of the low frequency modes. DFT-based molecular dynamics simulations show that anharmonicity does not play an important role in the structural dynamics of kaolinite.

  18. Lightweight Stacks of Direct Methanol Fuel Cells

    Science.gov (United States)

    Narayanan, Sekharipuram; Valdez, Thomas

    2004-01-01

    An improved design concept for direct methanol fuel cells makes it possible to construct fuel-cell stacks that can weigh as little as one-third as much as do conventional bipolar fuel-cell stacks of equal power. The structural-support components of the improved cells and stacks can be made of relatively inexpensive plastics. Moreover, in comparison with conventional bipolar fuel-cell stacks, the improved fuel-cell stacks can be assembled, disassembled, and diagnosed for malfunctions more easily. These improvements are expected to bring portable direct methanol fuel cells and stacks closer to commercialization. In a conventional bipolar fuel-cell stack, the cells are interspersed with bipolar plates (also called biplates), which are structural components that serve to interconnect the cells and distribute the reactants (methanol and air). The cells and biplates are sandwiched between metal end plates. Usually, the stack is held together under pressure by tie rods that clamp the end plates. The bipolar stack configuration offers the advantage of very low internal electrical resistance. However, when the power output of a stack is only a few watts, the very low internal resistance of a bipolar stack is not absolutely necessary for keeping the internal power loss acceptably low.

  19. Improvement of the optical quality of site-controlled InAs quantum dots by a double stack growth technique in wet-chemically etched holes

    Energy Technology Data Exchange (ETDEWEB)

    Pfau, Tino Johannes; Gushterov, Aleksander; Reithmaier, Johann-Peter [Technische Physik, INA, Universitaet Kassel (Germany); Cestier, Isabelle; Eisenstein, Gadi [Electrical Engineering Dept., Technion, Haifa (Israel); Linder, Evgany; Gershoni, David [Solid State Institute and Physics Dept., Technion, Haifa (Israel)

    2010-07-01

    The optimization of the wet-chemically etching of holes and a special MBE growth stack technique allows enlarging the site-control of low density InAs QDs on GaAs substrates up to a buffer layer thickness of 55 nm. The strain of InAs QDs, grown in the etched holes, reduces the hole closing, so that a pre-patterned surface is conserved for the second QD layer. The distance of 50 nm GaAs between the two QD layers exceeds drastically the maximum vertical alignment based on pure strain coupling (20 nm). Compared to stacks with several QD layers, this method avoids electronic coupling between the different QD layers and reduces the problems to distinguish the dots of different layers optically. Confocal microphotoluminescence reveals a significant diminution of the low temperature photoluminescence linewidth of the second InAs QD layer to an average value of 505{+-}53 {mu}eV and a minimum width of 460 {mu}eV compared to 2 to 4 meV for QDs grown on thin buffer layers. The increase of the buffer layer thickness decreases the influence of the surface defects caused by prepatterning.

  20. A Force Sensorless Method for CFRP/Ti Stack Interface Detection during Robotic Orbital Drilling Operations

    Directory of Open Access Journals (Sweden)

    Qiang Fang

    2015-01-01

    Full Text Available Drilling carbon fiber reinforced plastics and titanium (CFRP/Ti stacks is one of the most important activities in aircraft assembly. It is favorable to use different drilling parameters for each layer due to their dissimilar machining properties. However, large aircraft parts with changing profiles lead to variation of thickness along the profiles, which makes it challenging to adapt the cutting parameters for different materials being drilled. This paper proposes a force sensorless method based on cutting force observer for monitoring the thrust force and identifying the drilling material during the drilling process. The cutting force observer, which is the combination of an adaptive disturbance observer and friction force model, is used to estimate the thrust force. An in-process algorithm is developed to monitor the variation of the thrust force for detecting the stack interface between the CFRP and titanium materials. Robotic orbital drilling experiments have been conducted on CFRP/Ti stacks. The estimate error of the cutting force observer was less than 13%, and the stack interface was detected in 0.25 s (or 0.05 mm before or after the tool transited it. The results show that the proposed method can successfully detect the CFRP/Ti stack interface for the cutting parameters adaptation.

  1. Evaluation of field emission properties from multiple-stacked Si quantum dots

    International Nuclear Information System (INIS)

    Takeuchi, Daichi; Makihara, Katsunori; Ohta, Akio; Ikeda, Mitsuhisa; Miyazaki, Seiichi

    2016-01-01

    Multiple-stacked Si quantum dots (QDs) with ultrathin SiO 2 interlayers were formed on ultrathin SiO 2 layers by repeating a process sequence consisting of the formation of Si-QDs by low pressure chemical vapor deposition using a SiH 4 gas and the surface oxidation and subsequent surface modification by remote hydrogen and oxygen plasmas, respectively. To clarify the electron emission mechanism from multiple-stacked Si-QDs covered with an ultrathin Au top electrode, the energy distribution of the emitted electrons and its electric field dependence was measured using a hemispherical electron energy analyzer in an X-ray photoelectron spectroscopy system under DC bias application to the multiple-stacked Si-QD structure. At − 6 V and over, the energy distributions reached a peak at ~ 2.5 eV with a tail toward the higher energy side. While the electron emission intensity was increased exponentially with an increase in the applied DC bias, there was no significant increase in the emission peak energy. The observed emission characteristics can be interpreted in terms of field emissions from the second and/or third topmost Si-QDs resulting from the electric concentration there. - Highlights: • Electron field emission from 6-fold stack of Si-QDs has been evaluated. • AFM measurements show the local electron emission from individual Si-QDs. • Impact of applied bias on the electron emission energy distribution was investigated.

  2. Leveraging multi-layer imager detector design to improve low-dose performance for megavoltage cone-beam computed tomography

    Science.gov (United States)

    Hu, Yue-Houng; Rottmann, Joerg; Fueglistaller, Rony; Myronakis, Marios; Wang, Adam; Huber, Pascal; Shedlock, Daniel; Morf, Daniel; Baturin, Paul; Star-Lack, Josh; Berbeco, Ross

    2018-02-01

    While megavoltage cone-beam computed tomography (CBCT) using an electronic portal imaging device (EPID) provides many advantages over kilovoltage (kV) CBCT, clinical adoption is limited by its high doses. Multi-layer imager (MLI) EPIDs increase DQE(0) while maintaining high resolution. However, even well-designed, high-performance MLIs suffer from increased electronic noise from each readout, degrading low-dose image quality. To improve low-dose performance, shift-and-bin addition (ShiBA) imaging is proposed, leveraging the unique architecture of the MLI. ShiBA combines hardware readout-binning and super-resolution concepts, reducing electronic noise while maintaining native image sampling. The imaging performance of full-resolution (FR); standard, aligned binned (BIN); and ShiBA images in terms of noise power spectrum (NPS), electronic NPS, modulation transfer function (MTF), and the ideal observer signal-to-noise ratio (SNR)—the detectability index (d‧)—are compared. The FR 4-layer readout of the prototype MLI exhibits an electronic NPS magnitude 6-times higher than a state-of-the-art single layer (SLI) EPID. Although the MLI is built on the same readout platform as the SLI, with each layer exhibiting equivalent electronic noise, the multi-stage readout of the MLI results in electronic noise 50% higher than simple summation. Electronic noise is mitigated in both BIN and ShiBA imaging, reducing its total by ~12 times. ShiBA further reduces the NPS, effectively upsampling the image, resulting in a multiplication by a sinc2 function. Normalized NPS show that neither ShiBA nor BIN otherwise affects image noise. The LSF shows that ShiBA removes the pixilation artifact of BIN images and mitigates the effect of detector shift, but does not quantifiably improve the MTF. ShiBA provides a pre-sampled representation of the images, mitigating phase dependence. Hardware binning strategies lower the quantum noise floor, with 2  ×  2 implementation reducing the

  3. Radiation Induced Removal of Stacking Faults in Quenched Aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Bergenlid, U

    1965-12-15

    The effect of neutron irradiation on specimens of quenched aluminium containing Frank sessile dislocation loops has been studied by means of electron microscopy. The Frank loops were found to trans. form into perfect loops at doses less than 10{sup 17} nvt. A possible reason for the removal of the stacking faults is the displacement of a number of atoms at the faults, leading to the passage of a Shockley partial. Unfaulting induced by stress fields from dislocations, released during the irradiation, can also be important.

  4. Radiation Induced Removal of Stacking Faults in Quenched Aluminium

    International Nuclear Information System (INIS)

    Bergenlid, U.

    1965-12-01

    The effect of neutron irradiation on specimens of quenched aluminium containing Frank sessile dislocation loops has been studied by means of electron microscopy. The Frank loops were found to trans. form into perfect loops at doses less than 10 17 nvt. A possible reason for the removal of the stacking faults is the displacement of a number of atoms at the faults, leading to the passage of a Shockley partial. Unfaulting induced by stress fields from dislocations, released during the irradiation, can also be important

  5. Helping Students Design HyperCard Stacks.

    Science.gov (United States)

    Dunham, Ken

    1995-01-01

    Discusses how to teach students to design HyperCard stacks. Highlights include introducing HyperCard, developing storyboards, introducing design concepts and scripts, presenting stacks, evaluating storyboards, and continuing projects. A sidebar presents a HyperCard stack evaluation form. (AEF)

  6. Modular fuel-cell stack assembly

    Science.gov (United States)

    Patel, Pinakin

    2010-07-13

    A fuel cell assembly having a plurality of fuel cells arranged in a stack. An end plate assembly abuts the fuel cell at an end of said stack. The end plate assembly has an inlet area adapted to receive an exhaust gas from the stack, an outlet area and a passage connecting the inlet area and outlet area and adapted to carry the exhaust gas received at the inlet area from the inlet area to the outlet area. A further end plate assembly abuts the fuel cell at a further opposing end of the stack. The further end plate assembly has a further inlet area adapted to receive a further exhaust gas from the stack, a further outlet area and a further passage connecting the further inlet area and further outlet area and adapted to carry the further exhaust gas received at the further inlet area from the further inlet area to the further outlet area.

  7. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  8. 2D water layer enclathrated between Mn(II)-Ni(CN)4 coordination frameworks

    International Nuclear Information System (INIS)

    Ray, Ambarish; Bhowmick, Indrani; Sheldrick, William S.; Jana, Atish Dipankar; Ali, Mahammed

    2009-01-01

    A [Ni(CN) 4 ] 2- based two-dimensional Mn(II) coordination polymer {Mn(H 2 O) 2 [NiCN] 4 .4H 2 O}, in which the coordination layers are stacked on top of each other sandwiching 2D water layer of boat-shaped hexagonal water clusters has been synthesized. The complex exhibits high thermal decomposition temperature and reversible water absorption, which were clearly demonstrated by thermal and PXRD studies on the parent and rehydrated complex after dehydration. - Abstract: A coordination polymer, {Mn(H 2 O) 2 [NiCN] 4 .4H 2 O} n , showed that the coordination layers are stacked on top of each other sandwiching 2D ice layer of boat-shaped hexagonal water clusters . Display Omitted

  9. Guanine base stacking in G-quadruplex nucleic acids

    Science.gov (United States)

    Lech, Christopher Jacques; Heddi, Brahim; Phan, Anh Tuân

    2013-01-01

    G-quadruplexes constitute a class of nucleic acid structures defined by stacked guanine tetrads (or G-tetrads) with guanine bases from neighboring tetrads stacking with one another within the G-tetrad core. Individual G-quadruplexes can also stack with one another at their G-tetrad interface leading to higher-order structures as observed in telomeric repeat-containing DNA and RNA. In this study, we investigate how guanine base stacking influences the stability of G-quadruplexes and their stacked higher-order structures. A structural survey of the Protein Data Bank is conducted to characterize experimentally observed guanine base stacking geometries within the core of G-quadruplexes and at the interface between stacked G-quadruplex structures. We couple this survey with a systematic computational examination of stacked G-tetrad energy landscapes using quantum mechanical computations. Energy calculations of stacked G-tetrads reveal large energy differences of up to 12 kcal/mol between experimentally observed geometries at the interface of stacked G-quadruplexes. Energy landscapes are also computed using an AMBER molecular mechanics description of stacking energy and are shown to agree quite well with quantum mechanical calculated landscapes. Molecular dynamics simulations provide a structural explanation for the experimentally observed preference of parallel G-quadruplexes to stack in a 5′–5′ manner based on different accessible tetrad stacking modes at the stacking interfaces of 5′–5′ and 3′–3′ stacked G-quadruplexes. PMID:23268444

  10. Iridium Interfacial Stack - IrIS

    Science.gov (United States)

    Spry, David

    2012-01-01

    Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the Si

  11. Stacking faults on (001) in transition-metal disilicides with the C11b structure

    International Nuclear Information System (INIS)

    Ito, K.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

    1997-01-01

    Stacking faults on (001) in MoSi 2 and WSi 2 with the C11 b structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi 2 contains a high density of stacking faults, only several faults are observed in MoSi 2 . For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R = 1/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 ± 0.10 and 3.34 ± 0.10 for MoSi 2 and WSi 2 , respectively

  12. Stack filter classifiers

    Energy Technology Data Exchange (ETDEWEB)

    Porter, Reid B [Los Alamos National Laboratory; Hush, Don [Los Alamos National Laboratory

    2009-01-01

    Just as linear models generalize the sample mean and weighted average, weighted order statistic models generalize the sample median and weighted median. This analogy can be continued informally to generalized additive modeels in the case of the mean, and Stack Filters in the case of the median. Both of these model classes have been extensively studied for signal and image processing but it is surprising to find that for pattern classification, their treatment has been significantly one sided. Generalized additive models are now a major tool in pattern classification and many different learning algorithms have been developed to fit model parameters to finite data. However Stack Filters remain largely confined to signal and image processing and learning algorithms for classification are yet to be seen. This paper is a step towards Stack Filter Classifiers and it shows that the approach is interesting from both a theoretical and a practical perspective.

  13. Development of Thread-compatible Open Source Stack

    Science.gov (United States)

    Zimmermann, Lukas; Mars, Nidhal; Schappacher, Manuel; Sikora, Axel

    2017-07-01

    The Thread protocol is a recent development based on 6LoWPAN (IPv6 over IEEE 802.15.4), but with extensions regarding a more media independent approach, which - additionally - also promises true interoperability. To evaluate and analyse the operation of a Thread network a given open source 6LoWPAN stack for embedded devices (emb::6) has been extended in order to comply with the Thread specification. The implementation covers Mesh Link Establishment (MLE) and network layer functionality as well as 6LoWPAN mesh under routing mechanism based on MAC short addresses. The development has been verified on a virtualization platform and allows dynamical establishment of network topologies based on Thread’s partitioning algorithm.

  14. From the components to the stack. Developing and designing 5kW HT-PEFC stacks; Von der Komponente zum Stack. Entwicklung und Auslegung von HT-PEFC-Stacks der 5 kW-Klasse

    Energy Technology Data Exchange (ETDEWEB)

    Bendzulla, Anne

    2010-12-22

    The aim of the present project is to develop a stack design for a 5-kW HTPEFC system. First, the state of the art of potential materials and process designs will be discussed for each component. Then, using this as a basis, three potential stack designs with typical attributes will be developed and assessed in terms of practicality with the aid of a specially derived evaluation method. Two stack designs classified as promising will be discussed in detail, constructed and then characterized using short stack tests. Comparing the stack designs reveals that both designs are fundamentally suitable for application in a HT-PEFC system with on-board supply. However, some of the performance data differ significantly for the two stack designs. The preferred stack design for application in a HT-PEFC system is characterized by robust operating behaviour and reproducible high-level performance data. Moreover, in compact constructions (120 W/l at 60 W/kg), the stack design allows flexible cooling with thermal oil or air, which can be adapted to suit specific applications. Furthermore, a defined temperature gradient can be set during operation, allowing the CO tolerance to be increased by up to 10 mV. The short stack design developed within the scope of the present work therefore represents an ideal basis for developing a 5-kW HT-PEFC system. Topics for further research activities include improving the performance by reducing weight and/or volume, as well as optimizing the heat management. The results achieved within the framework of this work clearly show that HTPEFC stacks have the potential to play a decisive role in increasing efficiency in the future, particularly when combined with an on-board supply system. (orig.) [German] Ziel der vorliegenden Arbeit ist die Entwicklung eines Stackkonzeptes fuer ein 5 kW-HT-PEFC System. Dazu wird zunaechst fuer jede Komponente der Stand der Technik moeglicher Materialien und Prozesskonzepte diskutiert. Darauf aufbauend werden drei

  15. Comparison of radioactive doses after the last protection layer insight the reactor structure for Russian VVER-1000 and German PWR-1300 reactors

    International Nuclear Information System (INIS)

    Rahimi, A.; Mansourshaiflu, N.; Alizadeh, M. R.

    2004-01-01

    In pressurized reactors (VVER and PWR), various protections layers are used for reducing the output core doses. At any protection layer, some amount of neutron and gamma doses is reduced. In this project the axial flux of neutron and gamma beams have been evaluated at various protection layers in the operation state the German PWR-1300 and Russian VVER-1000 reactors by the MCNP computer code. For the purpose of effective use of the MCNP code and assuring its correct performance about of fluxed beams common and series of scientific answers and bench marks should be considered and the results obtained by the MCNP code, be compared with this answers. Then by using appropriate method, for reducing the flux variants of neutron and gamma beams at various protection layers of German PWR-1300 and Russian VVER-1000 reactors of the operation state of both reactors have been accelerated. In this projects, bench marks are computations and numbers existing in PSAR's present at Bushehr nuclear power plant. At the end, by using the results obtained and the standard doses, the time which a person can have work activity at the reactor wall (after the last protection layer), was compared for the operation status of the German PWR-1300 and Russian VVER-1000 reactors

  16. Electrostatic double-layer interaction between stacked charged bilayers

    Science.gov (United States)

    Hishida, Mafumi; Nomura, Yoko; Akiyama, Ryo; Yamamura, Yasuhisa; Saito, Kazuya

    2017-10-01

    The inapplicability of the DLVO theory to multilayered anionic bilayers is found in terms of the co-ion-valence dependence of the lamellar repeat distance. Most of the added salt is expelled from the interlamellar space to the bulk due to the Gibbs-Donnan effect on multiple bilayers with the bulk. The electrostatic double-layer interaction is well expressed by the formula recently proposed by Trefalt. The osmotic pressure due to the expelled ions, rather than the van der Waals interaction, is the main origin of the attractive force between the bilayers.

  17. Note: Resonance magnetoelectric interactions in laminate of FeCuNbSiB and multilayer piezoelectric stack for magnetic sensor

    Science.gov (United States)

    Li, Jianqiang; Lu, Caijiang; Xu, Changbao; Zhong, Ming

    2015-09-01

    This paper develops a simple miniature magnetoelectric (ME) laminate FeCuNbSiB/PZT-stack made up of magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils and piezoelectric Pb(Zr, Ti)O3 (PZT) multilayer stack vibrator. Resonant ME interactions of FeCuNbSiB/PZT-stack with different layers of FeCuNbSiB foil (L) are investigated in detail. The experimental results show that the ME voltage coefficient reaches maximum value of 141.5 (V/cm Oe) for FeCuNbSiB/PZT-stack with L = 6. The AC-magnetic sensitivities can reach 524.29 mV/Oe and 1.8 mV/Oe under resonance 91.6 kHz and off-resonance 1 kHz, respectively. The FeCuNbSiB/PZT-stack can distinguish small dc-magnetic field of ˜9 nT. The results indicate that the proposed ME composites are very promising for the cheap room-temperature magnetic field sensing technology.

  18. Copper based superconductors by the combination of blocking and mediating layers

    International Nuclear Information System (INIS)

    Shimizu, K.; Nobumasa, H.; Kawai, T.

    1992-01-01

    Copper based high temperature superconductors are composed of Cu-O 2 sheets in combination with thin atomic mediating layers and thick blocking layers which mediate and intercept interactions between Cu-O 2 sheets, respectively. New possible superconductors can be designed by the stacking of the Cu-O 2 sheets along with the periodic insertion of the mediating layers and different kinds of blocking layers. (orig.)

  19. Text-Filled Stacked Area Graphs

    DEFF Research Database (Denmark)

    Kraus, Martin

    2011-01-01

    -filled stacked area graphs; i.e., graphs that feature stacked areas that are filled with small-typed text. Since these graphs allow for computing the text layout automatically, it is possible to include large amounts of textual detail with very little effort. We discuss the most important challenges and some...... solutions for the design of text-filled stacked area graphs with the help of an exemplary visualization of the genres, publication years, and titles of a database of several thousand PC games....

  20. Fast method for in-flight estimation of total dose from protons and electrons using RADE Minstrument on JUICE

    Science.gov (United States)

    Hajdas, Wojtek; Mrigakshi, Alankrita; Xiao, Hualin

    2017-04-01

    The primary concern of the ESA JUICE mission to Jupiter is the harsh particle radiation environment. Ionizing particles introduce radiation damage by total dose effects, displacement damages or single events effects. Therefore, both the total ionizing dose and the displacement damage equivalent fluence must be assessed to alert spacecraft and its payload as well as to quantify radiation levels for the entire mission lifetime. We present a concept and implementations steps for simplified method used to compute in flight a dose rate and total dose caused by protons. We also provide refinement of the method previously developed for electrons. The dose rates values are given for predefined active volumes located behind layers of materials with known thickness. Both methods are based on the electron and proton flux measurements provided by the Electron and Proton Detectors inside the Radiation Hard Electron Monitor (RADEM) located on-board of JUICE. The trade-off between method accuracy and programming limitations for in-flight computations are discussed. More comprehensive and precise dose rate computations based on detailed analysis of all stack detectors will be made during off-line data processing. It will utilize full spectral unfolding from all RADEM detector subsystems.

  1. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  2. Tandem-type organic solar cells by stacking different heterojunction materials

    International Nuclear Information System (INIS)

    Triyana, Kuwat; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2005-01-01

    Three layers of phthalocyanine/perylene heterojunction (HJ) components were stacked and sandwiched by an indium tin oxide (ITO) and a top metal electrode, which is denoted by a triple-HJ organic solar cell. The organic material in the middle-HJ component second from the ITO was varied to investigate the photovoltaic properties. The power conversion efficiency (PCE) was improved by the more balanced photo-generated carrier by use of the appropriate material for the second-HJ component. The optimized device showed higher PCE (1.38%) than the reference device (0.98%)

  3. V-stack piezoelectric actuator

    Science.gov (United States)

    Ardelean, Emil V.; Clark, Robert L.

    2001-07-01

    Aeroelastic control of wings by means of a distributed, trailing-edge control surface is of interest with regards to maneuvers, gust alleviation, and flutter suppression. The use of high energy density, piezoelectric materials as motors provides an appealing solution to this problem. A comparative analysis of the state of the art actuators is currently being conducted. A new piezoelectric actuator design is presented. This actuator meets the requirements for trailing edge flap actuation in both stroke and force. It is compact, simple, sturdy, and leverages stroke geometrically with minimum force penalties while displaying linearity over a wide range of stroke. The V-Stack Piezoelectric Actuator, consists of a base, a lever, two piezoelectric stacks, and a pre-tensioning element. The work is performed alternately by the two stacks, placed on both sides of the lever. Pre-tensioning can be readily applied using a torque wrench, obviating the need for elastic elements and this is for the benefit of the stiffness of the actuator. The characteristics of the actuator are easily modified by changing the base or the stacks. A prototype was constructed and tested experimentally to validate the theoretical model.

  4. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    Directory of Open Access Journals (Sweden)

    A. Herz

    2016-03-01

    Full Text Available Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI oxide (WO3 which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  5. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    Energy Technology Data Exchange (ETDEWEB)

    Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Schaaf, P. [Department of Materials for Electronics and Electrical Engineering, Institute of Materials Science and Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, D-98693 Ilmenau (Germany)

    2016-03-15

    Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  6. Reflector imaging by diffraction stacking with stacking velocity analysis; Jugo sokudo kaiseki wo tomonau sanran jugoho ni yoru hanshamen imaging

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, J; Rokugawa, S; Kato, Y [The University of Tokyo, Tokyo (Japan). Faculty of Engineering; Yokota, T [Japan National Oil Corp., Tokyo (Japan); Miyazaki, T [Geological Survey of Japan, Tsukuba (Japan)

    1997-10-22

    Concerning seismic reflection survey for geometrical arrangement between pits, the scattering stacking method with stacking velocity analysis is compared with the CDP (common depth point horizontal stacking method). The advantages of the CDP supposedly include the following. Since it presumes an average velocity field, it can determine velocities having stacking effects. The method presumes stratification and, since such enables the division of huge quantities of observed data into smaller groups, more data can be calculated in a shorter time period. The method has disadvantages, attributable to its presuming an average velocity field, that accuracy in processing is lower when the velocity field contrast is higher, that accuracy in processing is low unless stratification is employed, and that velocities obtained from stacking velocity analysis are affected by dipped structures. Such shortcomings may be remedied in the scattering stacking method with stacking velocity analysis. Possibilities are that, as far as the horizontal reflection plane is concerned, it may yield stack records higher in S/N ratio than the CDP. Findings relative to dipped reflection planes will be introduced at the presentation. 6 refs., 12 figs.

  7. Spontaneous layering of porous silicon layers formed at high current densities

    Energy Technology Data Exchange (ETDEWEB)

    Parkhutik, Vitali; Curiel-Esparza, Jorge; Millan, Mari-Carmen [R and D Center MTM, Technical University of Valencia, Valencia (Spain); Albella, Jose [Institute of Materials Science (ICMM CSIC) Madrid (Spain)

    2005-06-01

    We report here a curious effect of spontaneous fracturing of the silicon layers formed in galvanostatic conditions at medium and high current densities. Instead of formation of homogeneous p-Si layer as at low currents, a stack of thin layers is formed. Each layer is nearly separated from others and possesses rather flat interfaces. The effects is observed using p{sup +}-Si wafers for the p-Si formation and starts being noticeable at above 100 mA/cm{sup 2}. We interpret these results in terms of the porous silicon growth model where generation of dynamic mechanical stress during the p-Si growth causes sharp changes in Si dissolution mechanism from anisotropic etching of individual needle-like pores in silicon to their branching and isotropic etching. At this moment p-Si layer loses its adhesion to the surface of Si wafer and another p-Si layer starts growing. One of the mechanisms triggering on the separation of p-Si layers from one another is a fluctuation of local anodic current in the pore bottoms associated with gas bubble evolution during the p-Si formation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Tank exhaust comparison with 40 CFR 61.93, Subpart H, and other referenced guidelines for Tank Farms National Emission Standards for Hazardous Air Pollutant (NESHAP) designated stacks

    International Nuclear Information System (INIS)

    Bachand, D.D.; Crummel, G.M.

    1994-07-01

    The US Environmental Protection Agency (EPA) promulgated National Emission Standards other than Radon from US Department of Energy (DOE) Facilities (40 CFR 61, Subpart H) on December 15, 1989. The regulations specify procedures, equipment, and test methods that.are to be used to measure radionuclide emissions from exhaust stacks that are designated as National Emission Standards for Hazardous Air Pollutant (NESHAP) stacks. Designated NESHAP stacks are those that have the potential to cause any member of the public to receive an effective dose equivalent (EDE) greater than or equal to 0.1 mrem/year, assuming all emission controls were removed. Tank Farms currently has 33 exhaust stacks, 15 of which are designated NESHAP stacks. This document assesses the compliance status of the monitoring and sampling systems for the designated NESHAP stacks

  9. Tank exhaust comparison with 40 CFR 61.93, Subpart H, and other referenced guidelines for Tank Farms National Emission Standards for Hazardous Air Pollutant (NESHAP) designated stacks

    Energy Technology Data Exchange (ETDEWEB)

    Bachand, D.D.; Crummel, G.M.

    1994-07-01

    The US Environmental Protection Agency (EPA) promulgated National Emission Standards other than Radon from US Department of Energy (DOE) Facilities (40 CFR 61, Subpart H) on December 15, 1989. The regulations specify procedures, equipment, and test methods that.are to be used to measure radionuclide emissions from exhaust stacks that are designated as National Emission Standards for Hazardous Air Pollutant (NESHAP) stacks. Designated NESHAP stacks are those that have the potential to cause any member of the public to receive an effective dose equivalent (EDE) greater than or equal to 0.1 mrem/year, assuming all emission controls were removed. Tank Farms currently has 33 exhaust stacks, 15 of which are designated NESHAP stacks. This document assesses the compliance status of the monitoring and sampling systems for the designated NESHAP stacks.

  10. Rearrangement of van der Waals stacking and formation of a singlet state at T = 90 K in a cluster magnet

    Energy Technology Data Exchange (ETDEWEB)

    Sheckelton, John P.; Plumb, Kemp W.; Trump, Benjamin A.; Broholm, Collin L.; McQueen, Tyrel M.

    2017-01-01

    Insulating Nb3Cl8 is a layered chloride consisting of two-dimensional triangular layers of Seff = 1/2 Nb3Cl13 clusters at room temperature. Magnetic susceptibility measurement show a sharp, hysteretic drop to a temperature independent value below T = 90 K. Specific heat measurements show that the transition is first order, with ΔS ≈ 5 J K-1 mol-1 f.u.-1, and a low temperature T-linear contribution originating from defect spins. Neutron and X-ray diffraction show a lowering of symmetry from trigonal P[3 with combining macron]m1 to monoclinic C2/m symmetry, with a change in layer stacking from –AB–AB– to –AB'–BC'–CA'– and no observed magnetic order. This lowering of symmetry and rearrangement of successive layers evades geometric magnetic frustration to form a singlet ground state. It is the lowest temperature at which a change in stacking sequence is known to occur in a van der Waals solid, occurs in the absence of orbital degeneracies, and suggests that designer 2-D heterostructures may be able to undergo similar phase transitions.

  11. Topotactic conversion of β-helix-layered silicate into AST-type zeolite through successive interlayer modifications.

    Science.gov (United States)

    Asakura, Yusuke; Takayama, Ryosuke; Shibue, Toshimichi; Kuroda, Kazuyuki

    2014-02-10

    AST-type zeolite with a plate morphology can be synthesized by topotactic conversion of a layered silicate (β-helix-layered silicate; HLS) by using N,N-dimethylpropionamide (DPA) to control the layer stacking of silicate layers and the subsequent interlayer condensation. Treatment of HLS twice with 1) hydrochloric acid/ethanol and 2) dimethylsulfoxide (DMSO) are needed to remove interlayer hydrated Na ions and tetramethylammonium (TMA) ions in intralayer cup-like cavities (intracavity TMA ions), both of which are introduced during the preparation of HLS. The utilization of an amide molecule is effective for the control of the stacking sequence of silicate layers. This method could be applicable to various layered silicates that cannot be topotactically converted into three-dimensional networks by simple interlayer condensation by judicious choice of amide molecules. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates

    Directory of Open Access Journals (Sweden)

    Kouta Tateno

    2012-01-01

    Full Text Available The VLS (vapor-liquid-solid method is one of the promising techniques for growing vertical III-V compound semiconductor nanowires on Si for application to optoelectronic circuits. Heterostructures grown in the axial direction by the VLS method and in the radial direction by the general layer-by-layer growth method make it possible to fabricate complicated and functional three-dimensional structures in a bottom-up manner. We can grow some vertical heterostructure nanopillars with flat tops on Si(111 substrates, and we have obtained core-multishell Ga(InP/GaAs/GaP nanowires with flat tops and their air-gap structures by using selective wet etching. Simulations indicate that a high- factor of over 2000 can be achieved for this air-gap structure. From the GaAs growth experiments, we found that zincblende GaAs without any stacking faults can be grown after the GaP nanowire growth. Pillars containing a quantum dot and without stacking faults can be grown by using this method. We can also obtain flat-top pillars without removing the Au catalysts when using small Au particles.

  14. Tunable electro-optic filter stack

    Science.gov (United States)

    Fontecchio, Adam K.; Shriyan, Sameet K.; Bellingham, Alyssa

    2017-09-05

    A holographic polymer dispersed liquid crystal (HPDLC) tunable filter exhibits switching times of no more than 20 microseconds. The HPDLC tunable filter can be utilized in a variety of applications. An HPDLC tunable filter stack can be utilized in a hyperspectral imaging system capable of spectrally multiplexing hyperspectral imaging data acquired while the hyperspectral imaging system is airborne. HPDLC tunable filter stacks can be utilized in high speed switchable optical shielding systems, for example as a coating for a visor or an aircraft canopy. These HPDLC tunable filter stacks can be fabricated using a spin coating apparatus and associated fabrication methods.

  15. Forced Air-Breathing PEMFC Stacks

    Directory of Open Access Journals (Sweden)

    K. S. Dhathathreyan

    2012-01-01

    Full Text Available Air-breathing fuel cells have a great potential as power sources for various electronic devices. They differ from conventional fuel cells in which the cells take up oxygen from ambient air by active or passive methods. The air flow occurs through the channels due to concentration and temperature gradient between the cell and the ambient conditions. However developing a stack is very difficult as the individual cell performance may not be uniform. In order to make such a system more realistic, an open-cathode forced air-breathing stacks were developed by making appropriate channel dimensions for the air flow for uniform performance in a stack. At CFCT-ARCI (Centre for Fuel Cell Technology-ARC International we have developed forced air-breathing fuel cell stacks with varying capacity ranging from 50 watts to 1500 watts. The performance of the stack was analysed based on the air flow, humidity, stability, and so forth, The major advantage of the system is the reduced number of bipolar plates and thereby reduction in volume and weight. However, the thermal management is a challenge due to the non-availability of sufficient air flow to remove the heat from the system during continuous operation. These results will be discussed in this paper.

  16. Method for monitoring stack gases for uranium activity

    International Nuclear Information System (INIS)

    Beverly, C.R.; Ernstberger, H.G.

    1988-01-01

    A method for sampling stack gases emanating from the purge cascade of a gaseous diffusion cascade system utilized to enrich uranium for determining the presence and extent of uranium in the stack gases in the form of gaseous uranium hexafluoride, is described comprising the steps of removing a side stream of gases from the stack gases, contacting the side stream of the stack gases with a stream of air sufficiently saturated with moisture for reacting with and converting any gaseous uranium hexafluroide contracted thereby in the side stream of stack gases to particulate uranyl fluoride. Thereafter contacting the side stream of stack gases containing the particulate uranyl fluoride with moving filter means for continuously intercepting and conveying the intercepted particulate uranyl fluoride away from the side stream of stack gases, and continually scanning the moving filter means with radiation monitoring means for sensing the presence and extent of particulate uranyl fluoride on the moving filter means which is indicative of the extent of particulate uranyl fluoride in the side stream of stack gases which in turn is indicative of the presence and extent of uranium hexafluoride in the stack gases

  17. Organic photovoltaic cells utilizing ultrathin sensitizing layer

    Science.gov (United States)

    Forrest, Stephen R [Ann Arbor, MI; Yang, Fan [Piscataway, NJ; Rand, Barry P [Somers, NY

    2011-09-06

    A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.

  18. Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

    Science.gov (United States)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

  19. Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

    2010-07-01

    Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

  20. Trapping a magnetic field of 7.9 T using a bulk magnet fabricated from stack of coated conductors

    International Nuclear Information System (INIS)

    Tamegai, T.; Hirai, T.; Sun, Y.; Pyon, S.

    2016-01-01

    Highlight: • A bulk magnet is fabricated using double stack of coated conductors (CC). • Magneto-optical imaging of the CC confirmed its homogeneity. • The fabricated bulk magnet has successfully trapped a magnetic field of 7.9 T. • The trapped magnetic field is consistent with the magnetic induction calculated from J_c(B) characteristics of the CC. - Abstract: We have fabricated a bulk magnet using double stack, each 130 layers, of short segments of coated conductors (CCs). The bulk magnet is magnetized by field-cooling in a magnetic field of 9 T down to 4.2 K. After reducing the magnetic field down to zero, we have successfully trapped a magnetic field of 7.9 T at the centre of the double stack. The magnetic field profile of the bulk magnet is calculated by fully considering the J_c(B) characteristics of the short segment of the CC. The trapped magnetic field values measured by Hall probes at three locations near the centre of the double stacks agree reasonably well with the calculated magnetic induction.

  1. Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

    Science.gov (United States)

    Rotunno, E.; Fabbri, F.; Cinquanta, E.; Kaplan, D.; Longo, M.; Lazzarini, L.; Molle, A.; Swaminathan, V.; Salviati, G.

    2016-06-01

    MoS2 multi-layer flakes, exfoliated from geological molybdenite, have been exposed to high dose electron irradiation showing clear evidence of crystal lattice and stoichiometry modifications. A massive surface sulfur depletion is induced together with the consequent formation of molybdenum nanoislands. It is found that a nanometric amorphous carbon layer, unwillingly deposited during the transmission electron microscope experiments, prevents the formation of the nanoislands. In the absence of the carbon layer, the formation of molybdenum grains proceeds both on the top and bottom surfaces of the flake. If carbon is present on both the surfaces then the formation of Mo grains is completely prevented.

  2. Flexural characteristics of a stack leg

    International Nuclear Information System (INIS)

    Cook, J.

    1979-06-01

    A 30 MV tandem Van de Graaff accelerator is at present under construction at Daresbury Laboratory. The insulating stack of the machine is of modular construction, each module being 860 mm in length. Each live section stack module contains 8 insulating legs mounted between bulkhead rings. The design, fabrication (from glass discs bonded to stainless steel discs using an epoxy film adhesive) and testing of the stack legs is described. (U.K.)

  3. Time-predictable Stack Caching

    DEFF Research Database (Denmark)

    Abbaspourseyedi, Sahar

    completely. Thus, in systems with hard deadlines the worst-case execution time (WCET) of the real-time software running on them needs to be bounded. Modern architectures use features such as pipelining and caches for improving the average performance. These features, however, make the WCET analysis more...... addresses, provides an opportunity to predict and tighten the WCET of accesses to data in caches. In this thesis, we introduce the time-predictable stack cache design and implementation within a time-predictable processor. We introduce several optimizations to our design for tightening the WCET while...... keeping the timepredictability of the design intact. Moreover, we provide a solution for reducing the cost of context switching in a system using the stack cache. In design of these caches, we use custom hardware and compiler support for delivering time-predictable stack data accesses. Furthermore...

  4. Effect of W addition on the electroless deposited NiP(W) barrier layer

    International Nuclear Information System (INIS)

    Tao, Yishi; Hu, Anmin; Hang, Tao; Peng, Li; Li, Ming

    2013-01-01

    Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu 3 Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP–2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP–2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.

  5. Three-dimensional graphene-polyaniline hybrid hollow spheres by layer-by-layer assembly for application in supercapacitor

    International Nuclear Information System (INIS)

    Luo, Jing; Ma, Qiang; Gu, Huahao; Zheng, Yuan; Liu, Xiaoya

    2015-01-01

    Highlights: •A graphene-polyaniline (GR-PANI) hybrid hollow sphere is fabricated by layer-by-layer (LBL) assembly technique. •The GR-PANI hollow sphere has higher specific capacitance than stacked GR-PANI LBL film. •64% of its initial capacitance is maintained with the current density increased from 0.5 to 20 A g −1 . •A high capacity retention rate of 83% after 1000 cycles can be achieved. -- Abstract: A novel kind of three-dimensional graphene-polyaniline hybrid hollow sphere (RGO-PANI HS) has been prepared via layer-by-layer (LBL) assembly of negatively-charged reduced graphene oxide (RGO) and positively charged polyaniline (PANI) on polystyrene (PS) microsphere, followed by the removal of the PS template. The hollow structure of the obtained RGO-PANI HS is confirmed by transmission electron microscopy (TEM). When used as the electrode materials for supercapacitor, the specific capacitance of the RGO-PANI HS reaches 381 F/g at a current density of 4.0 A/g, which is much higher than 251 F/g of the stacked RGO-PANI LBL film. The higher specific capacitance of RGO-PANI HS should be attributed to its unique hollow structure which provides a larger accessible surface area and facilitate the charge and ion transport. In addition, its specific capacitance can be facilely tailored by changing the assembly cycle number. Furthermore, good cycling stability is also demonstrated with 83% of the original capacitance value maintained after 1000 charging/discharging cycles

  6. Principles for Instructional Stack Development in HyperCard.

    Science.gov (United States)

    McEneaney, John E.

    The purpose of this paper is to provide information about obtaining and using HyperCard stacks that introduce users to principles of stack development. The HyperCard stacks described are available for downloading free of charge from a server at Indiana University South Bend. Specific directions are given for stack use, with advice for beginners. A…

  7. DBaaS with OpenStack Trove

    CERN Document Server

    Giardini, Andrea

    2013-01-01

    The purpose of the project was to evaluate the Trove component for OpenStack, understand if it can be used with the CERN infrastructure and report the benefits and disadvantages of this software. Currently, databases for CERN projects are provided by a DbaaS software developed inside the IT-DB group. This solution works well with the actual infrastructure but it is not easy to maintain. With the migration of the CERN infrastructure to OpenStack the Database group started to evaluate the Trove component. Instead of mantaining an own DbaaS service it can be interesting to migrate everything to OpenStack and replace the actual DbaaS software with Trove. This way both virtual machines and databases will be managed by OpenStack itself.

  8. Development of a fibre-optic dosemeter to measure the skin dose and percentage depth dose in the build-up region of therapeutic photon beams

    International Nuclear Information System (INIS)

    Kim, K. A.; Yoo, W. J.; Jang, K. W.; Moon, J.; Han, K. T.; Jeon, D.; Park, J. Y.; Cha, E. J.; Lee, B.

    2013-01-01

    In this study, a fibre-optic dosemeter (FOD) using an organic scintillator with a diameter of 0.5 mm for photon-beam therapy dosimetry was fabricated. The fabricated dosemeter has many advantages, including water equivalence, high spatial resolution, remote sensing and real-time measurement. The scintillating light generated from an organic-dosemeter probe embedded in a solid-water stack phantom is guided to a photomultiplier tube and an electrometer via 20 m of plastic optical fibre. Using this FOD, the skin dose and the percentage depth dose in the build-up region according to the depths of a solid-water stack phantom are measured with 6- and 15-MV photon-beam energies with field sizes of 10310 and 20320 cm 2 , respectively. The results are compared with those measured using conventional dosimetry films. It is expected that the proposed FOD can be effectively used in radiotherapy dosimetry for accurate measurement of the skin dose and the depth dose distribution in the build-up region due to its high spatial resolution. (authors)

  9. Stacking the Equiangular Spiral

    OpenAIRE

    Agrawal, A.; Azabi, Y. O.; Rahman, B. M.

    2013-01-01

    We present an algorithm that adapts the mature Stack and Draw (SaD) methodology for fabricating the exotic Equiangular Spiral Photonic Crystal Fiber. (ES-PCF) The principle of Steiner chains and circle packing is exploited to obtain a non-hexagonal design using a stacking procedure based on Hexagonal Close Packing. The optical properties of the proposed structure are promising for SuperContinuum Generation. This approach could make accessible not only the equiangular spiral but also other qua...

  10. Mo/Si multilayers with enhanced TiO II- and RuO II-capping layers

    Science.gov (United States)

    Yulin, Sergiy; Benoit, Nicolas; Feigl, Torsten; Kaiser, Norbert; Fang, Ming; Chandhok, Manish

    2008-03-01

    The lifetime of Mo/Si multilayer-coated projection optics is one of the outstanding issues on the road of commercialization of extreme-ultraviolet lithography (EUVL). The application of Mo/Si multilayer optics in EUVL requires both sufficient radiation stability and also the highest possible normal-incidence reflectivity. A serious problem of conventional high-reflective Mo/Si multilayers capped by silicon is the considerable degradation of reflective properties due to carbonization and oxidation of the silicon surface layer under exposure by EUV radiation. In this study, we focus on titanium dioxide (TiO II) and ruthenium dioxide (RuO II) as promising capping layer materials for EUVL multilayer coatings. The multilayer designs as well as the deposition parameters of the Mo/Si systems with different capping layers were optimized in terms of maximum peak reflectivity at the wavelength of 13.5 nm and longterm stability under high-intensive irradiation. Optimized TiO II-capped Mo/Si multilayer mirrors with an initial reflectivity of 67.0% presented a reflectivity drop of 0.6% after an irradiation dose of 760 J/mm2. The reflectivity drop was explained by the partial oxidation of the silicon sub-layer. No reflectivity loss after similar irradiation dose was found for RuO II-capped Mo/Si multilayer mirrors having initial peak reflectivity of 66%. In this paper we present data on improved reflectivity of interface-engineered TiO II- and RuO II-capped Mo/Si multilayer mirrors due to the minimization of both interdiffusion processes inside the multilayer stack and absorption loss in the oxide layer. Reflectivities of 68.5% at the wavelength of 13.4 nm were achieved for both TiO II- and RuO II-capped Mo/Si multilayer mirrors.

  11. Stochastic stacking without filters

    International Nuclear Information System (INIS)

    Johnson, R.P.; Marriner, J.

    1982-12-01

    The rate of accumulation of antiprotons is a critical factor in the design of p anti p colliders. A design of a system to accumulate higher anti p fluxes is presented here which is an alternative to the schemes used at the CERN AA and in the Fermilab Tevatron I design. Contrary to these stacking schemes, which use a system of notch filters to protect the dense core of antiprotons from the high power of the stack tail stochastic cooling, an eddy current shutter is used to protect the core in the region of the stack tail cooling kicker. Without filters one can have larger cooling bandwidths, better mixing for stochastic cooling, and easier operational criteria for the power amplifiers. In the case considered here a flux of 1.4 x 10 8 per sec is achieved with a 4 to 8 GHz bandwidth

  12. Assessing Elementary Algebra with STACK

    Science.gov (United States)

    Sangwin, Christopher J.

    2007-01-01

    This paper concerns computer aided assessment (CAA) of mathematics in which a computer algebra system (CAS) is used to help assess students' responses to elementary algebra questions. Using a methodology of documentary analysis, we examine what is taught in elementary algebra. The STACK CAA system, http://www.stack.bham.ac.uk/, which uses the CAS…

  13. Learning OpenStack networking (Neutron)

    CERN Document Server

    Denton, James

    2014-01-01

    If you are an OpenStack-based cloud operator with experience in OpenStack Compute and nova-network but are new to Neutron networking, then this book is for you. Some networking experience is recommended, and a physical network infrastructure is required to provide connectivity to instances and other network resources configured in the book.

  14. The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene

    Directory of Open Access Journals (Sweden)

    Ning Yang

    2018-02-01

    Full Text Available The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has the largest adsorption energy on methane, while the armchair graphene with Order stacking is opposite. In addition, both the Order and Bernal stacked graphenes possess a positive linear relationship between adsorption energy and layer number. Furthermore, they always have larger adsorption energy in zigzag graphene. For electronic properties, the results show that the stacking effects on band gap are significant, but it does not cause big changes to band structure and density of states. In the comparison of distance, the average interlamellar spacing of the Order stacked graphene is the largest. Moreover, the adsorption effect is the result of the interactions between graphene and methane combined with the change of graphene’s structure. Lastly, the armchair graphene with Order stacking possesses the lowest formation energy in these five dopants. It could be the best choice for doping to improve the methane adsorption.

  15. Development and characterisation of a portable direct methanol fuel cell stack

    Energy Technology Data Exchange (ETDEWEB)

    Oedegaard, A.

    2005-11-21

    This thesis deals with the development and characterisation of a portable direct methanol fuel cell stack. In addition, calculations of the transport of methanol and water in the membrane are compared with experimentally determined values. It also includes investigations of the behaviour of single-cells and some of its components, as the anode gas diffusion layer and the anode flow-field. For the addition of methanol to the anode feed loop, a passive concept based on a permeable tube was developed and verified by both experiments and simulations. (orig.)

  16. Enhancement of mechanical and electrical properties of continuous-fiber-reinforced epoxy composites with stacked graphene.

    Science.gov (United States)

    Naveh, Naum; Shepelev, Olga; Kenig, Samuel

    2017-01-01

    Impregnation of expandable graphite (EG) after thermal treatment with an epoxy resin containing surface-active agents (SAAs) enhanced the intercalation of epoxy monomer between EG layers and led to further exfoliation of the graphite, resulting in stacks of few graphene layers, so-called "stacked" graphene (SG). This process enabled electrical conductivity of cured epoxy/SG composites at lower percolation thresholds, and improved thermo-mechanical properties were measured with either Kevlar, carbon or glass-fiber-reinforced composites. Several compositions with SAA-modified SG led to higher dynamic moduli especially at high temperatures, reflecting the better wetting ability of the modified nanoparticles. The hydrophilic/hydrophobic nature of the SAA dictates the surface energy balance. More hydrophilic SAAs promoted localization of the SG at the Kevlar/epoxy interface, and morphology seems to be driven by thermodynamics, rather than the kinetic effect of viscosity. This effect was less obvious with carbon or glass fibers, due to the lower surface energy of the carbon fibers or some incompatibility with the glass-fiber sizing. Proper choice of the surfactant and fine-tuning of the crosslink density at the interphase may provide further enhancements in thermo-mechanical behavior.

  17. A Piezoelectric PZT Ceramic Mulitlayer Stack for Energy Harvesting Under Dynamic Forces

    Science.gov (United States)

    Xu, Tian-Bing; Siochi, Emilie J.; Kang, Jin Ho; Zuo, Lei; Zhou, Wanlu; Tang, Xiudong; Jiang, Xiaoning

    2011-01-01

    Piezoelectric energy harvesting transducers (PEHTs) are commonly used in motion/vibration energy scavenging devices. To date, most researchers have focused on energy harvesting at narrow bandwidths around the mechanical resonance frequency, and most piezoelectric harvesting devices reported in the literature have very low effective piezoelectric coefficient (d(sub eff)) (PZT ceramic multilayer stack (PZT-Stack) with high effective piezoelectric coefficient for high-performance PEHTs. The PZT-Stack is composed of 300 layers of 0.1 mm thick PZT plates, with overall dimensions of 32.4 mm X 7.0 mm X 7.0 mm. Experiments were carried out with dynamic forces in a broad bandwidth ranging from 0.5 Hz to 25 kHz. The measured results show that the effective piezoelectric coefficient of the PZT-stack is about 1 X 10(exp 5) pC/N at off-resonance frequencies and 1.39 X 10(exp 6) pC/N at resonance, which is order of magnitude larger than that of traditional PEHTs. The effective piezoelectric coefficients (d(sub eff)) do not change significantly with applied dynamic forces having root mean square (RMS) values ranging from 1 N to 40 N. In resonance mode, 231 mW of electrical power was harvested at 2479 Hz with a dynamic force of 11.6 N(sub rms), and 7.6 mW of electrical power was generated at a frequency of 2114 Hz with 1 N(sub rms) dynamic force. In off-resonance mode, an electrical power of 18.7 mW was obtained at 680 Hz with a 40 N(sub rms) dynamic force. A theoretical model of energy harvesting for the PZT-Stack is established. The modeled results matched well with experimental measurements. This study demonstrated that high effective piezoelectric coefficient structures enable PEHTs to harvest more electrical energy from mechanical vibrations or motions, suggesting an effective design for high-performance low-footprint PEHTs with potential applications in military, aerospace, and portable electronics. In addition, this study provides a route for using piezoelectric multilayer

  18. Status of MCFC stack technology at IHI

    Energy Technology Data Exchange (ETDEWEB)

    Hosaka, M.; Morita, T.; Matsuyama, T.; Otsubo, M. [Ishikawajima-Harima Heavy Industries Co., Ltd., Tokyo (Japan)

    1996-12-31

    The molten carbonate fuel cell (MCFC) is a promising option for highly efficient power generation possible to enlarge. IHI has been studying parallel flow MCFC stacks with internal manifolds that have a large electrode area of 1m{sup 2}. IHI will make two 250 kW stacks for MW plant, and has begun to make cell components for the plant. To improve the stability of stack, soft corrugated plate used in the separator has been developed, and a way of gathering current from stacks has been studied. The DC output potential of the plant being very high, the design of electric insulation will be very important. A 20 kW short stack test was conducted in 1995 FY to certificate some of the improvements and components of the MW plant. These activities are presented below.

  19. Dynamical stability of slip-stacking particles

    Energy Technology Data Exchange (ETDEWEB)

    Eldred, Jeffrey; Zwaska, Robert

    2014-09-01

    We study the stability of particles in slip-stacking configuration, used to nearly double proton beam intensity at Fermilab. We introduce universal area factors to calculate the available phase space area for any set of beam parameters without individual simulation. We find perturbative solutions for stable particle trajectories. We establish Booster beam quality requirements to achieve 97% slip-stacking efficiency. We show that slip-stacking dynamics directly correspond to the driven pendulum and to the system of two standing-wave traps moving with respect to each other.

  20. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Directory of Open Access Journals (Sweden)

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  1. Topotactic condensation of layer silicates with ferrierite-type layers forming porous tectosilicates.

    Science.gov (United States)

    Marler, B; Wang, Y; Song, J; Gies, H

    2014-07-21

    Five different hydrous layer silicates (HLSs) containing fer layers (ferrierite-type layers) were obtained by hydrothermal syntheses from mixtures of silicic acid, water and tetraalkylammonium/tetraalkylphosphonium hydroxides. The organic cations had been added as structure directing agents (SDA). A characteristic feature of the structures is the presence of strong to medium strong hydrogen bonds between the terminal silanol/siloxy groups of neighbouring layers. The five-layered silicates differ chemically only with respect to the organic cations. Structurally, they differ with respect to the arrangement of the fer layers relative to each other, which is distinct for every SDA-fer-layer system. RUB-20 (containing tetramethylammonium) and RUB-40 (tetramethylphosphonium) are monoclinic with stacking sequence AAA and shift vectors between successive layers 1a0 + 0b0 + 0.19c0 and 1a0 + 0b0 + 0.24c0, respectively. RUB-36 (diethyldimethylammonium), RUB-38 (methyltriethylammonium) and RUB-48 (trimethylisopropylammonium) are orthorhombic with stacking sequence ABAB and shift vectors 0.5a0 + 0b0± 0.36c0, 0.5a0 + 0b0 + 0.5c0 and 0.5a0 + 0b0± 0.39c0, respectively. Unprecedented among the HLSs, two monoclinic materials are made up of fer layers which possess a significant amount of ordered defects within the layer. The ordered defects involve one particular Si-O-Si bridge which is, to a fraction of ca. 50%, hydrolyzed to form nests of two ≡Si-OH groups. When heated to 500-600 °C in air, the HLSs condense to form framework silicates. Although all layered precursors were moderately to well ordered, the resulting framework structures were of quite different crystallinity. The orthorhombic materials RUB-36, -38 and -48, general formula SDA4Si36O72(OH)4, which possess very strong hydrogen bonds (d[O···O] ≈ 2.4 Å), transform into a fairly or well ordered CDO-type silica zeolite RUB-37. The monoclinic materials RUB-20 and -40, general formula SDA2Si18O36(OH)2OH, possessing

  2. Cover layer technology and a new hard coat for cartridge-free Blu-ray disc

    Science.gov (United States)

    Kang, Tae-Sik; Han, Mi Young; Lee, Seong-Keun; Jang, Sung Hoon; Hong, Young Jun; Seo, Hun; Lee, Chang-Ho

    2004-09-01

    Spin coating method for cover layer of Blu-ray Disc (BD) has been studied and a new hard coat resin including antifouling property has been developed. A vacuum chuck was newly designed to minimize the ski-jump effect. 3 mm hard coat layer was stacked onto the 97 mm cover layer by spin coating method.

  3. The physico-chemical 131I species in the stack exhaust air of a boiling water reactor

    International Nuclear Information System (INIS)

    Deuber, H.

    1982-07-01

    In the stack exhaust air of a German boiling water reactor, the fractions of elemental, particulate and organic 131 I were determined over a period of three years. The average fraction of elemental 131 I, which is decisive for the ingestion dose, was about 20% during the first two years and about 50% during the third year. (orig.) [de

  4. Stack released plutonium in the environment of a nuclear fuel reprocessing facility

    International Nuclear Information System (INIS)

    Horton, J.H.; Sanders, S.M.; Corey, J.C.

    1979-01-01

    Chemical separations facilities at the Savannah River Plant have released very small quantities of plutonium to the environment since 1955. Characterization studies of airborne particulates from the process stack show that the plutonium is nearly always attached to nonradioactive particles. The geometric mean diameter of plutonium-bearing particulates in the stack gas is 5.43 μm. Most of the particles contain less than 10 -15 Ci of 239 Pu. Studies with cascade impactors 1.1 m above the ground indicated that the average annual air concentration was 612 x 10 -18 Ci/m 3 (less than 0.1% of the maximum permissible concentration recommended by the ICRP). Cropping studies showed plutonium concentrations of 3 x 10 -3 pCi/g in wheat, 5.5 x 10 -4 in soybeans, and 1.7 x 10 -4 in corn. The 70-year dose-to-bone from ingesting 10 5 g of grain would be less than 1 mrem

  5. Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

    International Nuclear Information System (INIS)

    Park, Woojin; Yang, Jin Ho; Kang, Chang Goo; Lee, Young Gon; Hwang, Hyeon Jun; Kang, Soo Cheol; Lee, Sang Kyung; Lee, Byoung Hun; Cho, Chunhum; Lim, Sung Kwan; Lee, Sangchul; Hong, Woong-Ki

    2013-01-01

    A new touch sensor device has been demonstrated with molybdenum disulfide (MoS 2 ) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS 2 (MPM) and metal/PVDF–TrFE/Al 2 O 3 /MoS 2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al 2 O 3 . The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al 2 O 3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles. (paper)

  6. Spherical Torus Center Stack Design

    International Nuclear Information System (INIS)

    C. Neumeyer; P. Heitzenroeder; C. Kessel; M. Ono; M. Peng; J. Schmidt; R. Woolley; I. Zatz

    2002-01-01

    The low aspect ratio spherical torus (ST) configuration requires that the center stack design be optimized within a limited available space, using materials within their established allowables. This paper presents center stack design methods developed by the National Spherical Torus Experiment (NSTX) Project Team during the initial design of NSTX, and more recently for studies of a possible next-step ST (NSST) device

  7. Dose conversion factors and linear energy transfer for irradiation of thin blood layers with low-energy X rays

    International Nuclear Information System (INIS)

    Verhaegen, F.; Seuntjens, J.

    1994-01-01

    For irradiation of thin samples of biological material with low-energy X rays, conversion of measured air kerma, free in air to average absorbed dose to the sample is necessary. In the present paper, conversion factors from measured air kerma to average absorbed dose in thin blood samples are given for four low-energy X-ray qualities (14-50 kVp). These factors were obtained by Monte Carlo simulation of a practical sample holder. Data for different thicknesses of the blood and backing layer are presented. The conversion factors are found to depend strongly on the thicknesses of the blood layer and backing layer. In radiobiological work, knowledge of linear energy transfer (LET) values for the radiation quality used is often required. Track-averaged LET values for low-energy X rays are presented in this work. It is concluded that the thickness of the sample does not influence the LET value appreciably, indicating that for all radiobiological purposes this value can be regarded as a constant throughout the sample. Furthermore, the large difference between the LET value for a 50 kV spectrum found in this work and the value given in ICRU Report 16 is pointed out. 16 refs., 7 figs., 1 tab

  8. The untyped stack calculus and Bohm's theorem

    Directory of Open Access Journals (Sweden)

    Alberto Carraro

    2013-03-01

    Full Text Available The stack calculus is a functional language in which is in a Curry-Howard correspondence with classical logic. It enjoys confluence but, as well as Parigot's lambda-mu, does not admit the Bohm Theorem, typical of the lambda-calculus. We present a simple extension of stack calculus which is for the stack calculus what Saurin's Lambda-mu is for lambda-mu.

  9. Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substrates

    International Nuclear Information System (INIS)

    Bulle-Lieuwma, C.W.T.; Van Ommen, A.H.; Vandenhoudt, D.E.W.; Ottenheim, J.J.M.; de Jong, A.F.

    1991-01-01

    Heteroepitaxial Si/CoSi 2 /Si structures have been synthesized by implanting 170-keV Co + with doses in the range 1--3x10 17 Co + ions/cm 2 into (100) and (111) Si substrates and subsequent annealing. The microstructure of both the as-implanted and annealed structures is investigated in great detail by transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction. In the as-implanted samples, the Co is present as CoSi 2 precipitates, occurring both in aligned (A-type) and twinned (B-type) orientation. For the highest dose, a continuous layer of stoichiometric CoSi 2 is already formed during implantation. It is found that the formation of a connected layer, already during implantation, is crucial for the formation of a buried CoSi 2 layer upon subsequent annealing. Particular attention is given to the coordination of the interfacial Co atoms at the Si/CoSi 2 (111) interfaces of both types of precipitates. We find that the interfacial Co atoms at the A-type interfaces are fully sevenfold coordinated, whereas at the B-type interfaces they appear to be eightfold coordinated

  10. Effect of stacking sequence and surface treatment on the thermal conductivity of multilayered hybrid nano-composites

    Science.gov (United States)

    Papanicolaou, G. C.; Pappa, E. J.; Portan, D. V.; Kotrotsos, A.; Kollia, E.

    2018-02-01

    The aim of the present investigation was to study the effect of both the stacking sequence and surface treatment on the thermal conductivity of multilayered hybrid nano-composites. Four types of multilayered hybrid nanocomposites were manufactured and tested: Nitinol- CNTs (carbon nanotubes)- Acrylic resin; Nitinol- Acrylic resin- CNTs; Surface treated Nitinol- CNTs- Acrylic resin and Surface treated Nitinol- Acrylic resin- CNTs. Surface treatment of Nitinol plies was realized by means of the electrochemical anodization. Surface topography of the anodized nitinol sheets was investigated through Scanning Electron Microscopy (SEM). It was found that the overall thermal response of the manufactured multilayered nano-composites was greatly influenced by both the anodization and the stacking sequence. A theoretical model for the prediction of the overall thermal conductivity has been developed considering the nature of the different layers, their stacking sequence as well as the interfacial thermal resistance. Thermal conductivity and Differential Scanning Calorimetry (DSC) measurements were conducted, to verify the predicted by the model overall thermal conductivities. In all cases, a good agreement between theoretical predictions and experimental results was found.

  11. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  12. Adding large EM stack support

    KAUST Repository

    Holst, Glendon

    2016-12-01

    Serial section electron microscopy (SSEM) image stacks generated using high throughput microscopy techniques are an integral tool for investigating brain connectivity and cell morphology. FIB or 3View scanning electron microscopes easily generate gigabytes of data. In order to produce analyzable 3D dataset from the imaged volumes, efficient and reliable image segmentation is crucial. Classical manual approaches to segmentation are time consuming and labour intensive. Semiautomatic seeded watershed segmentation algorithms, such as those implemented by ilastik image processing software, are a very powerful alternative, substantially speeding up segmentation times. We have used ilastik effectively for small EM stacks – on a laptop, no less; however, ilastik was unable to carve the large EM stacks we needed to segment because its memory requirements grew too large – even for the biggest workstations we had available. For this reason, we refactored the carving module of ilastik to scale it up to large EM stacks on large workstations, and tested its efficiency. We modified the carving module, building on existing blockwise processing functionality to process data in manageable chunks that can fit within RAM (main memory). We review this refactoring work, highlighting the software architecture, design choices, modifications, and issues encountered.

  13. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Deyin; Zhou, Weidong [Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States); Yin, Xin; Wang, Xudong [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-05-04

    In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

  14. Defect analysis of NiMnSb epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Nowicki, L. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland)]. E-mail: lech.nowicki@fuw.edu.pl; Turos, A. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Stonert, A. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland); Garrido, F. [Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, CNRS-IN2P3-Universite Paris-Sud, 91405 Orsay (France); Molenkamp, L.W. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Bach, P. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Schmidt, G. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Karczewski, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, POB 510119, 01314 Dresden (Germany)

    2005-10-15

    NiMnSb layers grown on InP substrates with InGaAs buffer were studied by the backscattering/channeling spectrometry (RBS/C) with He beams. The nature of predominant defects observed in the layers was studied by determination of incident-energy dependence of the relative channeling yield. The defects are described as a combination of large amount of interstitial atoms and of stacking faults or grain boundaries. The presence of grains was confirmed by transmission electron microscopy.

  15. The structure and elemental composition of the SiO2 layers with zinc-based nano clusters created by high-dose implantation and annealing

    International Nuclear Information System (INIS)

    Mokhovikov, M.A.; Komarov, F.F.; Vlasukova, L.A.; Mil'chanin, O.V.; Wendler, E.; Wesch, W.; Zhukovski, P.; Vengerek, P.

    2015-01-01

    We present the results of the structure and elemental composition of the SiO 2 layers after high-dose zinc implantation (10 16 - 10 17 sm -2 ) at room temperature and at 500°C, as well as after 700°C annealing. In the case of 'hot' implantation the formation of nano sized (to 5 nm) clusters containing atoms of zinc is registered in as-implanted samples. TEM-analysis proves crystalline structure of these precipitates. Subsequent annealing results in a redistribution of zinc within the implanted layer and in the formation of large crystallites (10 -12 nm for a dose of 5*10 16 cm -2 and 12-18 nm for a dose of 10 17 cm -2 ) in the area of high impurity concentration. (authors)

  16. Laser pulse stacking method

    Science.gov (United States)

    Moses, E.I.

    1992-12-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter. 2 figs.

  17. Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

    KAUST Repository

    Cheng, Yingchun

    2017-01-12

    While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

  18. Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

    KAUST Repository

    Cheng, Yingchun; Zhu, Yihan; Han, Yu; Liu, Zhongyuan; Yang, Bingchao; Nie, Anmin; Huang, Wei; Shahbazian-Yassar, Reza; Mashayek, Farzad

    2017-01-01

    While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

  19. Oxygen-induced immediate onset of the antiferromagnetic stacking in thin Cr films on Fe(001)

    Energy Technology Data Exchange (ETDEWEB)

    Berti, Giulia, E-mail: giulia.berti@polimi.it; Brambilla, Alberto; Calloni, Alberto; Bussetti, Gianlorenzo; Finazzi, Marco; Duò, Lamberto; Ciccacci, Franco [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-04-20

    We investigated the magnetic coupling of ultra-thin Cr films grown at 600 K on a Fe(001)-p(1 × 1)O substrate by means of spin-polarized photoemission spectroscopy. Our findings show that the expected antiferromagnetic stacking of the magnetization in Cr(001) layers occurs right from the first atomic layer at the Cr/Fe interface. This is at variance with all previous observations in similar systems, prepared in oxygen-free conditions, which always reported on a delayed onset of the magnetic oscillations due to the occurrence of significant chemical alloying at the interface, which is substantially absent in our preparation.

  20. Noncovalent Pi-Pi Stacking at the Carbon-Electrolyte Interface: Controlling the Voltage Window of Electrochemical Supercapacitors.

    Science.gov (United States)

    Li, Mengya; Westover, Andrew S; Carter, Rachel; Oakes, Landon; Muralidharan, Nitin; Boire, Timothy C; Sung, Hak-Joon; Pint, Cary L

    2016-08-03

    A key parameter in the operation of an electrochemical double-layer capacitor is the voltage window, which dictates the device energy density and power density. Here we demonstrate experimental evidence that π-π stacking at a carbon-ionic liquid interface can modify the operation voltage of a supercapacitor device by up to 30%, and this can be recovered by steric hindrance at the electrode-electrolyte interface introduced by poly(ethylene oxide) polymer electrolyte additives. This observation is supported by Raman spectroscopy, electrochemical impedance spectroscopy, and differential scanning calorimetry that each independently elucidates the signature of π-π stacking between imidazole groups in the ionic liquid and the carbon surface and the role this plays to lower the energy barrier for charge transfer at the electrode-electrolyte interface. This effect is further observed universally across two separate ionic liquid electrolyte systems and is validated by control experiments showing an invariant electrochemical window in the absence of a carbon-ionic liquid electrode-electrolyte interface. As interfacial or noncovalent interactions are usually neglected in the mechanistic picture of double-layer capacitors, this work highlights the importance of understanding chemical properties at supercapacitor interfaces to engineer voltage and energy capability.

  1. Start-Stop Test Procedures on the PEMFC Stack Level

    DEFF Research Database (Denmark)

    Mitzel, Jens; Nygaard, Frederik; Veltzé, Sune

    The test is addressed to investigate the influence on stack durability of a long stop followed by a restart of a stack. Long stop should be defined as a stop in which the anodic compartment is fully filled by air due to stack leakages. In systems, leakage level of the stack is low and time to fil...

  2. SRS reactor stack plume marking tests

    International Nuclear Information System (INIS)

    Petry, S.F.

    1992-03-01

    Tests performed in 105-K in 1987 and 1988 demonstrated that the stack plume can successfully be made visible (i.e., marked) by introducing smoke into the stack breech. The ultimate objective of these tests is to provide a means during an emergency evacuation so that an evacuee can readily identify the stack plume and evacuate in the opposite direction, thus minimizing the potential of severe radiation exposure. The EPA has also requested DOE to arrange for more tests to settle a technical question involving the correct calculation of stack downwash. New test canisters were received in 1988 designed to produce more smoke per unit time; however, these canisters have not been evaluated, because normal ventilation conditions have not been reestablished in K Area. Meanwhile, both the authorization and procedure to conduct the tests have expired. The tests can be performed during normal reactor operation. It is recommended that appropriate authorization and procedure approval be obtained to resume testing after K Area restart

  3. Trace interpolation by slant-stack migration

    International Nuclear Information System (INIS)

    Novotny, M.

    1990-01-01

    The slant-stack migration formula based on the radon transform is studied with respect to the depth steep Δz of wavefield extrapolation. It can be viewed as a generalized trace-interpolation procedure including wave extrapolation with an arbitrary step Δz. For Δz > 0 the formula yields the familiar plane-wave decomposition, while for Δz > 0 it provides a robust tool for migration transformation of spatially under sampled wavefields. Using the stationary phase method, it is shown that the slant-stack migration formula degenerates into the Rayleigh-Sommerfeld integral in the far-field approximation. Consequently, even a narrow slant-stack gather applied before the diffraction stack can significantly improve the representation of noisy data in the wavefield extrapolation process. The theory is applied to synthetic and field data to perform trace interpolation and dip reject filtration. The data examples presented prove that the radon interpolator works well in the dip range, including waves with mutual stepouts smaller than half the dominant period

  4. Development of Auto-Stacking Warehouse Truck

    Directory of Open Access Journals (Sweden)

    Kuo-Hsien Hsia

    2018-03-01

    Full Text Available Warehouse automation is a very important issue for the promotion of traditional industries. For the production of larger and stackable products, it is usually necessary to operate a fork-lifter for the stacking and storage of the products by a skilled person. The general autonomous warehouse-truck does not have the ability of stacking objects. In this paper, we develop a prototype of auto-stacking warehouse-truck that can work without direct operation by a skill person. With command made by an RFID card, the stacker truck can take the packaged product to the warehouse on the prior-planned route and store it in a stacking way in the designated storage area, or deliver the product to the shipping area or into the container from the storage area. It can significantly reduce the manpower requirements of the skilled-person of forklift technician and improve the safety of the warehousing area.

  5. Evaluation of two-dimensional bolus effect of immobilization/support devices on skin doses: A radiochromic EBT film dosimetry study in phantom

    International Nuclear Information System (INIS)

    Chiu-Tsao, Sou-Tung; Chan, Maria F.

    2010-01-01

    Purpose: In this study, the authors have quantified the two-dimensional (2D) perspective of skin dose increase using EBT film dosimetry in phantom in the presence of patient immobilization devices during conventional and IMRT treatments. Methods: For 6 MV conventional photon field, the authors evaluated and quantified the 2D bolus effect on skin doses for six different common patient immobilization/support devices, including carbon fiber grid with Mylar sheet, Orfit carbon fiber base plate, balsa wood board, Styrofoam, perforated AquaPlast sheet, and alpha-cradle. For 6 and 15 MV IMRT fields, a stack of two film layers positioned above a solid phantom was exposed at the air interface or in the presence of a patient alpha-cradle. All the films were scanned and the pixel values were converted to doses based on an established calibration curve. The authors determined the 2D skin dose distributions, isodose curves, and cross-sectional profiles at the surface layers with or without the immobilization/support device. The authors also generated and compared the dose area histograms (DAHs) and dose area products from the 2D skin dose distributions. Results: In contrast with 20% relative dose [(RD) dose relative to d max on central axis] at 0.0153 cm in the film layer for 6 MV 10x10 cm 2 open field, the average RDs at the same depth in the film layer were 71%, 69%, 55%, and 57% for Orfit, balsa wood, Styrofoam, and alpha-cradle, respectively. At the same depth, the RDs were 54% under a strut and 26% between neighboring struts of a carbon fiber grid with Mylar sheet, and between 34% and 56% for stretched perforated AquaPlast sheet. In the presence of the alpha-cradle for the 6 MV (15 MV) IMRT fields, the hot spot doses at the effective measurement depths of 0.0153 and 0.0459 cm were 140% and 150% (83% and 89%), respectively, of the isocenter dose. The enhancement factor was defined as the ratio of a given DAH parameter (minimum dose received in a given area) with and without

  6. WE-DE-BRA-07: Megavoltage Spectral Imaging with a Layered Detector

    Energy Technology Data Exchange (ETDEWEB)

    Myronakis, M; Rottmann, J; Berbeco, R [Brigham and Women’s Hospital, Boston, MA (United States); Hu, Y [Dana Farber Cancer Institute, Boston, MA (United States); Wang, A; Shedlock, D; Star-Lack, J [Varian Medical Systems, Palo Alto, CA (United States); Morf, D [Varian Medical Systems, Dattwil, Aargau (Switzerland)

    2016-06-15

    Purpose: The aim of the current work is to investigate the feasibility of megavoltage spectral imaging using a multiple layered detector for enhancement of low contrast detectability through material segmentation and discrimination (such as bone, markers and metal implants). Potentially the technique can be applied to improve detection and reduce dose in Megavoltage Cone Beam Computed Tomography (MV-CBCT). Methods: Experiments were performed with a prototype multi-layer imager (MLI) which has higher detective efficiency and lower noise characteristics than conventional Electronic Portal Imaging Devices (EPIDs). Images of a solid water phantom were acquired at 2.5 MV, 6MV and 6MV without flattening filter (FFF). The following materials were placed within a stack of solid water: aluminum, copper and gold. Material separation was assessed based on Contrast-to-Noise Ratio (CNR) of the weighted image, formed by a weighted subtraction of the images from two layers of the MLI. A range of weighting factors were investigated for material separation. Results: CNR can be minimized for each material by appropriate selection of the subtraction weighting factor. This is equivalent to a selective subtraction of specific materials from the image. Using multiple layers simultaneously also decreases the dose requirement and removes any registration errors. The minimum CNR for aluminum, copper and gold at the weighted image formed with 2.5MV was obtained at weighting factors equal to 0.92, 0.76 and 0.64 respectively. The corresponding values at 6MVFFF were 0.99, 0.92 and 0.78 respectively. Conclusion: In the current work, an MV spectral imaging feasibility study was attempted using a novel multi-layer prototype EPID imager. Initial results suggest that material separation based on spectral differences between different layers is possible. This spectral imaging technique has potential advantages in MV-CBCT for real-time target tracking, patient set-up imaging and adaptive radiotherapy

  7. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Science.gov (United States)

    Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

    2017-12-01

    We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

  8. Introduction of a stack-phantom for PET

    International Nuclear Information System (INIS)

    Jonsson, C.; Schnell, P.O.; Jacobsson, H.; Engelin, L.; Danielsson, A.M.; Johansson, L.; Larsson, S.A.; Pagani, M.; Stone-Elander, S.

    2002-01-01

    Aim: We have previously developed a new flexible phantom system for SPECT, i.e. 'the stack phantom' (Eur. J. Nucl. Med. 27, No.2, 131-139, 2000). The unique feature of this phantom system is that it allows studies with, as well as without major degrading impacts from photon attenuation and Compton scattering. The specific aim of this work was to further develop the system with special reference to PET. Material and methods: The principle of the phantom concept is discrete sampling of 3D objects by a series of equidistant 2D planes. The 2D planes are a digitised set of 2D sections, representing the radioactivity distribution in the object of interest. Using a grey scale related to the radioactivity concentration, selected images are printed by radioactive ink on thin paper sheets and stacked into the 3D structure with low-density or with tissue equivalent material in between. Using positron emitting radionuclides, the paper sheets alone may not be sufficiently thick to avoid annihilation losses due to escaping positrons. In order to investigate the amount of additional material needed, a spot of radioactivity ( 18 F) was printed out and subsequently covered by adding thin plastic films (0.055mm) on both sides of the paper. Short PET scans (ECAT 921) were performed and the count-rate was registered after each additional layer of plastic cover. A first prototype, a cylindrical cold-spot phantom was constructed on the basis of these results. Nine identical sheets were printed out and first mounted in between 4 mm plates of polystyrene (density 1.04 g/cm 3 ). After a PET-scan, the paper sheets were re-mounted in between a low-density material (Divinycell, H30, density 0.03 g/cm 3 ) before repeating the PET scan. Results: For 18 F, the number of registered annihilation photons increased with increasing number of plastic sheets from 70% for the pure paper sheet to about 100% with 0.5 mm plastic cover on each side. PET of the low-density stacked cold spot phantom

  9. 40 CFR 61.44 - Stack sampling.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 8 2010-07-01 2010-07-01 false Stack sampling. 61.44 Section 61.44 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) NATIONAL... Firing § 61.44 Stack sampling. (a) Sources subject to § 61.42(b) shall be continuously sampled, during...

  10. Different regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wires

    International Nuclear Information System (INIS)

    Fuster, David; Martinez-Pastor, Juan; Gonzalez, Luisa; Gonzalez, Yolanda

    2006-01-01

    In the present work we study the influence of stacking self-assembled InAs quantum wires (QWRs) on the emission wavelength and the excitonic recombination dynamics. The reduction in the InP spacer layer thickness, d(InP), produces both a size filtering effect towards large wire ensembles and an increase in the vertical coupling for electrons and holes along the stack direction. The different vertical coupling for electrons and holes induces a different behaviour in the exciton recombination dynamics, depending on the InP spacer layer thickness: weak electron coupling and negligible hole coupling for d(InP) > 10 nm, intermediate electron coupling and weak hole coupling for 5 nm ≤ d(InP) ≤ 10 nm and strong electron coupling and moderate hole coupling for d(InP) < 5 nm. Such exciton dynamics have been established by comparing the experimental time decay results with a multi-quantum well model accounting for the vertical carrier coupling

  11. SOFC - Manufacture of stacks for test and demonstration related activities, stack and system tests and identification of end user requirements. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Jacobsen, Joachim; Primdahl, S.; Boegh Elmose, H.; Weineisen, H.; Richter, A.

    2008-11-15

    The aim of the project was to solve the technical challenges in relation to stack functionality in connection with operation of multi stack assemblies under realistic operating conditions. It was the intention to make a targeted effort with the aim of developing a high performance stack technology suitable for both small and large units. An important part of the project was the testing of stack assemblies up to 10 kW power range with relevant fuel and realistic operation condition in the test facility at HC OErstedvaerket. The manufacturing of stacks in the project was as planned a number of stacks (70 kW) for use in demonstration projects both for single stacks and for multi stack assemblies. The start up of the work on the SOFC test facility at HC OErstedsvaerket (HCV) was delayed due to a late delivery of the unit from the PSO 6385 project. A number of unforeseen events during the project have meant that the SOFC test facility at HCV has not until now been ready for performing tests. The experience gained from the operation of a 20 kW Alpha unit in a co-operation between TOFC and Waertsilae now provides an important contribution to the future multi stack assemblies. The work on identification of end user requirements has resulted in a number of different development priorities for the m-CHP and the Distributed Generation market segments. (au)

  12. Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings

    International Nuclear Information System (INIS)

    Ouerghui, W.; Melliti, A.; Maaref, M.A.; Martinez-Pastor, J.; Gomis, J.; Granados, D.; Garcia, J.M.

    2006-01-01

    We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy

  13. Topotactic conversion of layered silicate RUB-15 to silica sodalite through interlayer condensation in N-methylformamide.

    Science.gov (United States)

    Koike, Masakazu; Asakura, Yusuke; Sugihara, Megumi; Kuroda, Yoshiyuki; Tsuzura, Hidehiro; Wada, Hiroaki; Shimojima, Atsushi; Kuroda, Kazuyuki

    2017-08-08

    Silica sodalite was obtained using topotactic conversion of layered silicate RUB-15 through stepwise processes that consisted of the control of stacking sequence of the layers, interlayer condensation by refluxing, and elimination of intercalated guest species. The interlayer condensation of RUB-15, in which acetic acid was pre-intercalated between the layers to control the stacking sequence, afforded a sodalite framework containing organic guest species by refluxing in N-methylformamide (NMF). The pre-intercalated acetic acid molecules were largely replaced with NMF. This formation process of silica sodalite containing large amounts of intercalated organic guest species is in clear contrast to the previously reported process that used direct calcination of an intercalation compound of layered RUB-15 accommodating acetic acid between the layers. Calcination of the condensed product provided sodalite with fewer defects than the directly calcined product, thus indicating the advantage of the stepwise process. The method reported here is useful for the preparation of pure silica sodalite with relatively low defects and plate-like morphology.

  14. Synthesis of carbon nanotubes from palm oil on stacking and non-stacking substrate by thermal-CVD method

    Science.gov (United States)

    Robaiah, M.; Rusop, M.; Abdullah, S.; Khusaimi, Z.; Azhan, H.; Fadzlinatul, M. Y.; Salifairus, M. J.; Asli, N. A.

    2018-05-01

    Palm oil has been used as the carbon source to synthesize carbon nanotubes (CNTs) on silicon substrates using the thermal chemical vapor deposition (CVD) method. Meanwhile, silicon has been applied using two techniques, which are stacked technique and non-stacked technique. The CNTs were grown at the constant time of 30 minutes with various synthesis temperatures of 750 °C, 850 °C and 950 °C. The CNTs were characterized using micro-Raman spectroscopy and field emission scanning electron microscopy (FESEM). It was found that the density, growth rate, diameter and length of the CNTs produced were affected by the synthesis temperature. Moreover, the structure slightly changes were observed between CNTs obtained in SS and NSS. The synthesize temperature of 750 °C was considered as the suitable temperature for the production of CNTs due to low ID/IG ratio, which for stacked is 0.89 and non-stacked are 0.90. The possible explanation for the different morphology of the produced CNTs was also discussed.

  15. Ion blocking and channeling studies of heteroepitaxial GaN layers

    International Nuclear Information System (INIS)

    Flagmeyer, R.; Ehrlich, C.; Geist, V.; Otto, G.

    1978-01-01

    Ion channeling and blocking in backscattering measurements were used for the characterization of thin epitaxial GaN layers, which have varied lattice imperfections involved by different growth conditions. In particular, the following characteristics were examined: (1) the thickness and the uniformity of the layers, (2) the depth dependence of the crystalline imperfection, (3) the dislocation density, (4) the spread in the orientation distribution of tilted crystallites, and (5) some other types of imperfections, such as stacking faults, double positioning, twins and bending of the layer

  16. Intrinsic and extrinsic magnetic properties of the naturally layered manganites

    International Nuclear Information System (INIS)

    Berger, A.; Mitchell, J. F.; Miller, D. J.; Jiang, J. S.; Bader, S. D.

    1999-01-01

    Structural and magnetic properties of the two-layered Ruddlesden-Popper phase SrO(La 1-x Sr x MnO 3 ) 2 with x = 0.3--0.5 are highlighted. Intrinsic properties of these naturally layered manganites include a colossal magnetoresistance, a composition-dependent magnetic anisotropy, and almost no remanence. Above the Curie temperature there is a non-vanishing extrinsic magnetization attributed to intergrowths (stacking faults in the layered structure). These lattice imperfections consist of additional or missing manganite layers, as observed in transmission electron microscopy. Their role in influencing the properties of the host material is highlighted

  17. On the "stacking fault" in copper

    NARCIS (Netherlands)

    Fransens, J.R.; Pleiter, F

    2003-01-01

    The results of a perturbed gamma-gamma angular correlations experiment on In-111 implanted into a properly cut single crystal of copper show that the defect known in the literature as "stacking fault" is not a planar faulted loop but a stacking fault tetrahedron with a size of 10-50 Angstrom.

  18. Effect of fiber angle orientation and stacking sequence on mixed mode fracture toughness of carbon fiber reinforced plastics: Numerical and experimental investigations

    International Nuclear Information System (INIS)

    Naghipour, P.; Bartsch, M.; Chernova, L.; Hausmann, J.; Voggenreiter, H.

    2010-01-01

    This paper focuses on the effect of fiber orientation and stacking sequence on the progressive mixed mode delamination failure in composite laminates using fracture experiments and finite element (FE) simulations. Every laminate is modelled numerically combining damageable layers with defined fiber orientations and cohesive zone interface elements, subjected to mixed mode bending. The numerical simulations are then calibrated and validated through experiments, conducted following standardized mixed mode delamination tests. The numerical model is able to successfully capture the experimentally observed effects of fiber angle orientations and variable stacking sequences on the global load-displacement response and mixed mode inter-laminar fracture toughness of the various laminates. For better understanding of the failure mechanism, fracture surfaces of laminates with different stacking sequences are also studied using scanning electron microscopy (SEM).

  19. Evaluation of the effect of radiation levels and dose rates in irradiation of murine fibroblasts used as a feeder layer in the culture of human keratinocytes

    International Nuclear Information System (INIS)

    Yoshito, Daniele; Almeida, Tiago L.; Santin, Stefany Plumeri; Somessari, Elizabeth S.R.; Silveira, Carlos G. da; Mathor, Monica B.; Altran, Silvana C.; Isaac, Cesar

    2009-01-01

    In 1975, Rheinwald and Green published an effective methodology for obtaining and cultivating human keratinocytes. This methodology consisted of seeding keratinocytes onto a feeder layer composed of lineage 3T3 murine fibroblasts, the proliferation rate of which is then controlled through the action of ionizing radiation. The presence of the feeder layer encourages the development of keratinocyte colonies and their propagation in similar cultures, becoming possible several clinical applications as skin substitutes or wound dressings in situations such as post burn extensive skin loss and other skin disorders. However, good development of these keratinocytes depends on a high quality feeder layer among other factors. In the present work, we evaluated the relationship between radiation levels and dose rates applied to fibroblasts used in construction of feeder layers and the radiation effect on keratinocytes colonies forming efficiency. Results indicate 3T3 lineage murine fibroblasts irradiated with doses varying between 60 and 100 Gy can be used as a feeder layer immediately after irradiation or storage of the irradiated cells in suspension at 4 g C for 24 hours with similar results. The exception is when the irradiation dose rate is 2.75 Gyh -1 ; in this case, results suggested that the fibroblasts should be used immediately after irradiation. (author)

  20. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  1. High dose, heavy ion implantation into metals: the use of sacrificial surface layers to enhance retention

    International Nuclear Information System (INIS)

    Clapham, L.

    1994-01-01

    While of considerable interest for the production of metallic alloys, high dose, heavy ion implantation is highly problematical, since the process is limited by sputtering effects. Sputtering is less significant, however, for light target materials, such as C and Al. This paper summarizes studies involving the use of light materials (such as C and Al) which act as slowly sputtering ''sacrificial layers'' when deposited on metallic targets prior to heavy ion implantation. The use of C and Al sacrificial coatings has enabled implanted ion retentions of 100% to be obtained in a number of ion-metal target systems, where the retentions in uncoated samples were as low as 20%. Ion implantation invariably leads to mixing at the sacrificial layer-metal target interface. This mixing may be detrimental in certain systems, so it is useful to be able to minimize or remove this mixed region. To achieve this, a number of techniques have been investigated: (1) removal of the mixed region in the latter stages of the implant; (2) using a barrier layer or chemical effects to minimize mixing at the sacrificial layer-metal interface; (3) choosing a sacrificial layer material which forms a mixed region which has desirable properties. The results of these investigations, for a number of different ion-target systems, are outlined in this paper. (orig.)

  2. Layered tin dioxide microrods

    International Nuclear Information System (INIS)

    Duan Junhong; Huang Hongbo; Gong Jiangfeng; Zhao Xiaoning; Cheng Guangxu; Yang Shaoguang

    2007-01-01

    Single-crystalline layered SnO 2 microrods were synthesized by a simple tin-water reaction at 900 deg. C. The structural and optical properties of the sample were characterized by x-ray powder diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, Raman scattering and photoluminescence (PL) spectroscopy. High resolution transmission electron microscopy studies and selected area electron diffraction patterns revealed that the layered SnO 2 microrods are single crystalline and their growth direction is along [1 1 0]. The growth mechanism of the microrods was proposed based on SEM, TEM characterization and thermodynamic analysis. It is deduced that the layered microrods grow by the stacking of SnO 2 sheets with a (1 1 0) surface in a vapour-liquid-solid process. Three emission peaks at 523, 569 and 626 nm were detected in room-temperature PL measurements

  3. Radioecology of and radiation dose from Dutch waste gypsum released into the environment

    International Nuclear Information System (INIS)

    Koster, H.W.; Weers, A.W. van; Netherlands Energy Research Foundation, Petten)

    1985-11-01

    The Dutch industries release 9 kinds of waste gypsum, 90% of the total quantity is phosphogypsum. Only waste gypsums from the phosphate industries show increased radioactivity, the strongest in phosphogypsum. All phosphogypsum, 2 Tg.a -1 , is disposed of into the Rhine at Rotterdam. This leads to an increase of radionuclides, from the U-238 chain, along the Dutch coast. The calculated increase of activity concentrations in sea food causes an increase of the individual radiation dose of maximal 150 μSv.a -1 and of the Dutch population dose of 170 manSv.a -1 . Stacking of the phosphogypsum would result in a dose increase of one order of magnitude lower. The need for environmental disposal or stacking of at least the fine and coarse fractions of the phosphogypsum, which are difficult to recycle, will remain. (Auth.)

  4. Numerical model for stack gas diffusion in terrain with buildings. Variations in air flow and gas concentration with additional building near stack

    International Nuclear Information System (INIS)

    Sada, Koichi; Michioka, Takenobu; Ichikawa, Yoichi; Komiyama, Sumito; Numata, Kunio

    2009-01-01

    A numerical simulation method for predicting atmospheric flow and stack gas diffusion using a calculation domain of several km around a stack under complex terrain conditions containing buildings has been developed. The turbulence closure technique using a modified k-ε-type model without a hydrostatic approximation was used for flow calculation, and some of the calculation grids near the ground were treated as buildings using a terrain-following coordinate system. Stack gas diffusion was predicted using the Lagrangian particle model, that is, the stack gas was represented by trajectories of released particles. The developed numerical model was applied to a virtual terrain and building conditions in this study prior to the applications of a numerical model for real terrain and building conditions. The height of the additional building (H a ), located about 200 m leeward from the stack, was varied (i.e., H a =0, 20, 30 and 50 m), and its effects on airflow and the concentration of stack gas at a released height of 75 m were calculated. Furthermore, effective stack height, which was used in the safety analysis of atmospheric diffusion for nuclear facilities in Japan, was evaluated from the calculated ground-level concentration of stack gas. The cavity region behind the additional building was calculated, and turbulence near the cavity was observed to decrease when the additional building was present. According to these flow variations with the additional building, tracer gas tended to diffuse to the ground surface rapidly with the additional building at the leeward position of the cavity, and the ground-level stack gas concentration along the plume axis also increased with the height of the additional building. However, the variations in effective stack height with the height of the additional building were relatively small and ranged within several m in this study. (author)

  5. Fabrication of read-only type triple-layered disc

    Science.gov (United States)

    Yang, Huei Wen; Jeng, Tzuan Ren; Yen, Wen Hsin; Chan, Rong Po; Shin, Kuo Ding; Huang, Der Ray

    2003-06-01

    The approach to increase optical recording density has become very popular research subject in these years. One direct and effective method is to increase the recording layer stack number. That is to say, to add one more recording layer can get one more recording capacity. In this paper, we will propose a new method for manufacturing read only type multi-layered disc. The process is described in the following. This first recorded data layer (called L0) still follows the traditional DVD disc manufacturing process. We obtain the polycarbonate substrate by replicating from Ni stamper. Then polycarbonate substrate is sputtered thin silicon film for semi-reflection layer. As for second layer (L1) and even more layer (Ln-1) producing, one special kind of duplication (called SKD) method is proposed. The duplication (or replication) source of second or nth recorded data is not only limited from Ni stamper. Even polycarbonate or PMMA substrate has recording data are also acceptable sources. At next step, the duplication source is deposited by thin gold film. Then we apply spin coating to bond the first layer (L0) substrate and second layer (L1) duplication source by choosing suitable UV curing glue. After being emitted by UV lamp for several seconds, we can easily separate the duplication source of second layer (L1) from (L0) substrate. Then we find the thin second data layer (L1) is replicated and stacks upon the first layer. On the same way, we sputter thin AgTi layer on the thin second data layer for another semi- reflective layer. By following the above manufacture step, we can produce more layers. In our experimental, we prepare triple layered read-only type disc. The total capacity is almost 12GB for one side of disc, and 24GB for two side of disc. The read-out intensity of laser from each data layer is expected to be similar. Thus we have designed particular reflectance and transmittance for each data layer by controlling the thickness of thin silicon film. We can

  6. Density of oxidation-induced stacking faults in damaged silicon

    NARCIS (Netherlands)

    Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

    1986-01-01

    A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

  7. Two-Dimensional SnO Anodes with a Tunable Number of Atomic Layers for Sodium Ion Batteries

    KAUST Repository

    Zhang, Fan; Zhu, Jiajie; Zhang, Daliang; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2017-01-01

    We have systematically changed the number of atomic layers stacked in 2D SnO nanosheet anodes and studied their sodium ion battery (SIB) performance. The results indicate that as the number of atomic SnO layers in a sheet decreases, both

  8. A preliminary study of a miniature planar 6-cell PEMFC stack combined with a small hydrogen storage canister

    Science.gov (United States)

    Zhang, Xigui; Zheng, Dan; Wang, Tao; Chen, Cong; Cao, Jianyu; Yan, Jian; Wang, Wenming; Liu, Juanying; Liu, Haohan; Tian, Juan; Li, Xinxin; Yang, Hui; Xia, Baojia

    The fabrication and performance evaluation of a miniature 6-cell PEMFC stack based on Micro-Electronic-Mechanical-System (MEMS) technology is presented in this paper. The stack with a planar configuration consists of 6-cells in serial interconnection by spot welding one cell anode with another cell cathode. Each cell was made by sandwiching a membrane-electrode-assembly (MEA) between two flow field plates fabricated by a classical MEMS wet etching method using silicon wafer as the original material. The plates were made electrically conductive by sputtering a Ti/Pt/Au composite metal layer on their surfaces. The 6-cells lie in the same plane with a fuel buffer/distributor as their support, which was fabricated by the MEMS silicon-glass bonding technology. A small hydrogen storage canister was used as fuel source. Operating on dry H 2 at a 40 ml min -1 flow rate and air-breathing conditions at room temperature and atmospheric pressure, the linear polarization experiment gave a measured peak power of 0.9 W at 250 mA cm -2 for the stack and average power density of 104 mW cm -2 for each cell. The results suggested that the stack has reasonable performance benefiting from an even fuel supply. But its performance tended to deteriorate with power increase, which became obvious at 600 mW. This suggests that the stack may need some power assistance, from say supercapacitors to maintain its stability when operated at higher power.

  9. Architecture Design Approaches and Issues in Cross Layer Systems

    DEFF Research Database (Denmark)

    Cattoni, Andrea Fabio; Sørensen, Troels Bundgaard; Mogensen, Preben

    2012-01-01

    the traditional protocol stack design methodology. However, Cross Layer also carries a risk due to possibly unexpected and undesired effects. In this chapter we want to provide architecture designers with a set of tools and recommendations synthesized from an analysis of the state of art, but enriched...

  10. Optical and structural characterization of self-organized stacked GaN/AlN quantum dots

    International Nuclear Information System (INIS)

    Salviati, G; Rossi, F; Armani, N; Grillo, V; Martinez, O; Vinattieri, A; Damilano, B; Matsuse, A; Grandjean, N

    2004-01-01

    Self-organized GaN/AlN stacked quantum dots (QDs) have been studied by means of cathodoluminescence (CL), near field scanning optical microscopy (NSOM), photoluminescence, μ-Raman, and transmission electron microscopy. Assignment of the optical emissions was made on the basis of the structural parameters, power-dependent optical studies and depth-resolved CL. Power-dependent studies allowed us to distinguish between quantum confined and buffer emissions. On increasing the power injection conditions, a QD-size-dependent blue shift due to the screening of the internal electric fields was found together with a trend to saturation observed in the high injection limit. The possible evidence of excited states has also been shown by power-dependent photoluminescence and CL. Different blue shifts in specimens with different numbers of stacked layers suggested possible different residual strain values as confirmed by μ-Raman studies. Depth-resolved CL investigations performed at constant power injection per unit volume allowed us to distinguish between QD layers with different nominal GaN coverages and a linear dependence of peak energy versus GaN monolayer number has also been found. Adding 1 ML of GaN resulted in an average shift of about 150 meV. The existence of QDs with different size distributions along the growth axis was also found. The observations were confirmed by NSOM spectroscopy

  11. Ultrasonic, microwave, and millimeter wave inspection techniques for adhesively bonded stacked open honeycomb core composites

    Science.gov (United States)

    Thomson, Clint D.; Cox, Ian; Ghasr, Mohammad Tayeb Ahmed; Ying, Kuang P.; Zoughi, Reza

    2015-03-01

    Honeycomb sandwich composites are used extensively in the aerospace industry to provide stiffness and thickness to lightweight structures. A common fabrication method for thick, curved sandwich structures is to stack and bond multiple honeycomb layers prior to machining core curvatures. Once bonded, each adhesive layer must be inspected for delaminations and the presence of unwanted foreign materials. From a manufacturing and cost standpoint, it can be advantageous to inspect the open core prior to face sheet closeout in order to reduce end-article scrap rates. However, by nature, these honeycomb sandwich composite structures are primarily manufactured from low permittivity and low loss materials making detection of delamination and some of the foreign materials (which also are low permittivity and low loss) quite challenging in the microwave and millimeter wave regime. Likewise, foreign materials such as release film in adhesive layers can be sufficiently thin as to not cause significant attenuation in through-transmission ultrasonic signals, making them difficult to detect. This paper presents a collaborative effort intended to explore the efficacy of different non-contact NDI techniques for detecting flaws in a stacked open fiberglass honeycomb core panel. These techniques primarily included air-coupled through-transmission ultrasonics, single-sided wideband synthetic aperture microwave and millimeter-wave imaging, and lens-focused technique. The goal of this investigation has been to not only evaluate the efficacy of these techniques, but also to determine their unique advantages and limitations for evaluating parameters such as flaw type, flaw size, and flaw depth.

  12. Microchannel neural interface manufacture by stacking silicone and metal foil laminae

    Science.gov (United States)

    Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

    2016-06-01

    Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

  13. Thin hybrid pixel assembly fabrication development with backside compensation layer

    Energy Technology Data Exchange (ETDEWEB)

    Bates, R., E-mail: richard.bates@glasgow.ac.uk [Experimental Particle Physics Group, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ (United Kingdom); Buttar, C.; McMullen, T.; Cunningham, L.; Ashby, J.; Doherty, F. [Experimental Particle Physics Group, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ (United Kingdom); Pares, G.; Vignoud, L.; Kholti, B. [CEA Leti, MINATEC, 17 rue des Martyrs, F38054, Grenoble (France); Vahanen, S. [Advacam Oy, Tietotie 3, 02150 Espoo (Finland)

    2017-02-11

    The ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m{sup 2}. To keep the tracker material budget low it is crucial to minimize the mass of the pixel modules via thinning both the sensor and readout chip to about 150 μm each. The bump yield of thin module assemblies using solder based bump bonding can be problematic due to wafer bowing during solder reflow at high temperature. A new bump-bonding process using backside compensation on the readout chip to address the issue of low yield will be presented. The objective is to compensate dynamically the stress of the front side stack by adding a compensating layer to the backside of the wafer. A SiN and Al:Si stack has been chosen for the backside layer. The bow reducing effect of applying a backside compensation layer will be demonstrated using the FE-I4 wafer. The world's first results from assemblies produced from readout wafers thinned to 100 μm with a stress compensation layer are presented with bond yields close to 100% measured using the FE-I4 readout chip.

  14. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  15. Vertical melting of a stack of membranes

    Science.gov (United States)

    Borelli, M. E. S.; Kleinert, H.; Schakel, A. M. J.

    2001-02-01

    A stack of tensionless membranes with nonlinear curvature energy and vertical harmonic interaction is studied. At low temperatures, the system forms a lamellar phase. At a critical temperature, the stack disorders vertically in a melting-like transition.

  16. Slip-stacking Dynamics for High-Power Proton Beams at Fermilab

    Energy Technology Data Exchange (ETDEWEB)

    Eldred, Jeffrey Scott [Indiana Univ., Bloomington, IN (United States)

    2015-12-01

    Slip-stacking is a particle accelerator configuration used to store two particle beams with different momenta in the same ring. The two beams are longitudinally focused by two radiofrequency (RF) cavities with a small frequency difference between them. Each beam is synchronized to one RF cavity and perturbed by the other RF cavity. Fermilab uses slip-stacking in the Recycler so as to double the power of the 120 GeV proton beam in the Main Injector. This dissertation investigates the dynamics of slip-stacking beams analytically, numerically and experimentally. In the analytic analysis, I find the general trajectory of stable slip-stacking particles and identify the slip-stacking parametric resonances. In the numerical analysis, I characterize the stable phase-space area and model the particle losses. In particular, I evaluate the impact of upgrading the Fermilab Booster cycle-rate from 15 Hz to 20 Hz as part of the Proton Improvement Plan II (PIP-II). The experimental analysis is used to verify my approach to simulating slip-stacking loss. I design a study for measuring losses from the longitudinal single-particle dynamics of slip-stacking as a function of RF cavity voltage and RF frequency separation. I further propose the installation of a harmonic RF cavity and study the dynamics of this novel slip-stacking configuration. I show the harmonic RF cavity cancels out parametric resonances in slip-stacking, reduces emittance growth during slip-stacking, and dramatically enhances the stable phase-space area. The harmonic cavity is expected to reduce slip-stacking losses to far exceed PIP-II requirements. These results raise the possibility of extending slip-stacking beyond the PIP-II era.

  17. Multilayer Piezoelectric Stack Actuator Characterization

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

  18. Characterization of Piezoelectric Stacks for Space Applications

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher; Aldrich, Jack; Blodget, Chad; Bao, Xiaoqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to actuate mechanisms to precision levels in the nanometer range and below. Co-fired multilayer piezoelectric stacks offer the required actuation precision that is needed for such mechanisms. To obtain performance statistics and determine reliability for extended use, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and high temperatures and voltages. In order to study the lifetime performance of these stacks, five actuators were driven sinusoidally for up to ten billion cycles. An automated data acquisition system was developed and implemented to monitor each stack's electrical current and voltage waveforms over the life of the test. As part of the monitoring tests, the displacement, impedance, capacitance and leakage current were measured to assess the operation degradation. This paper presents some of the results of this effort.

  19. Two Topologically Distinct Dirac-Line Semimetal Phases and Topological Phase Transitions in Rhombohedrally Stacked Honeycomb Lattices

    Science.gov (United States)

    Hyart, T.; Ojajärvi, R.; Heikkilä, T. T.

    2018-04-01

    Three-dimensional topological semimetals can support band crossings along one-dimensional curves in the momentum space (nodal lines or Dirac lines) protected by structural symmetries and topology. We consider rhombohedrally (ABC) stacked honeycomb lattices supporting Dirac lines protected by time-reversal, inversion and spin rotation symmetries. For typical band structure parameters there exists a pair of nodal lines in the momentum space extending through the whole Brillouin zone in the stacking direction. We show that these Dirac lines are topologically distinct from the usual Dirac lines which form closed loops inside the Brillouin zone. In particular, an energy gap can be opened only by first merging the Dirac lines going through the Brillouin zone in a pairwise manner so that they turn into closed loops inside the Brillouin zone, and then by shrinking these loops into points. We show that this kind of topological phase transition can occur in rhombohedrally stacked honeycomb lattices by tuning the ratio of the tunneling amplitudes in the directions perpendicular and parallel to the layers. We also discuss the properties of the surface states in the different phases of the model.

  20. Experiments on Classification of Electroencephalography (EEG Signals in Imagination of Direction using Stacked Autoencoder

    Directory of Open Access Journals (Sweden)

    Kenta Tomonaga

    2017-08-01

    Full Text Available This paper presents classification methods for electroencephalography (EEG signals in imagination of direction measured by a portable EEG headset. In the authorsr previous studies, principal component analysis extracted significant features from EEG signals to construct neural network classifiers. To improve the performance, the authors have implemented a Stacked Autoencoder (SAE for the classification. The SAE carries out feature extraction and classification in a form of multi-layered neural network. Experimental results showed that the SAE outperformed the previous classifiers.

  1. MULTI-LAYER MIRROR FOR RADIATION IN THE XUV WAVELENGHT RANGE AND METHOD FOR MANUFACTURE THEREOF

    NARCIS (Netherlands)

    Bijkerk, Frederik; Louis, Eric; Kessels, M.J.H.; Verhoeven, Jan; Den Hartog, Harmen Markus Johannes

    2002-01-01

    Multi-layer mirror for radiation with a wavelength in the wavelength range between 0.1 nm and 30 nm (the so-called XUV range), comprising a stack of thin films substantially comprising scattering particles which scatter the radiation, which thin films are separated by separating layers with a

  2. OpenStack augstas pieejamības risinājumi

    OpenAIRE

    Dreiže, Toms

    2016-01-01

    Šis bakalaura darbs ir pētījums par OpenStack IaaS mākoņpakalpojumu platformu. Tā mērķis ir sniegt ieskatu augstas pieejamības pamatprincipos un OpenStack mākoņpakalpojumu platformas piedāvātajos augstas pieejamības nodrošināšanas risinājumos. Bakalaura darba gaitā ir veikta augsti pieejamas OpenStack trīs mezglu sistēmas uzstādīšana, izmantojot Galera Cluster datubāzu klasteri un HAProxy slodzes līdzsvarotāju. Tika pārbaudīta OpenStack augsta pieejamība, testējot OpenStack Glance komponentes...

  3. Synthesis of single-crystalline Al layers in sapphire

    International Nuclear Information System (INIS)

    Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

    1999-01-01

    Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

  4. Efficiency of Polymer Electrolyte Membrane Fuel Cell Stack

    Directory of Open Access Journals (Sweden)

    Hans Bosma

    2011-08-01

    Full Text Available This paper applies a feedforward control of optimal oxygen excess ratio that maximize net power (improve efficiency of a NedStack P8.0-64 PEM fuel cell stack (FCS system. Net powers profile as a function of oxygen excess ratio for some points of operation are analyzed by using FCS model. The relationships between stack current and the corresponding control input voltage that gives an optimal oxygen excess ratio are used to design a feedforward control scheme. The results of this scheme are compared to the results of a feedforward control using a constant oxygen excess ratio. Simulation results show that optimal oxygen excess ratio improves fuel cell performance compared to the results of constant oxygen excess ratio. The same procedures are performed experimentally for the FCS system. The behaviour of the net power of the fuel cell stack with respect to the variation of oxygen excess ratio is analyzed to obtain optimal values. Data of stack current and the corresponding voltage input to the compressor that gives optimal values of oxygen excess ratio are used to develop a feedforward control. Feedforward control based on constant and optimal oxygen excess ratio control, are implemented in the NedStack P8.0-64 PEM fuel cell stack system by using LabVIEW. Implementation results shows that optimal oxygen excess ratio control improves the fuel cell performance compared to the constant oxygen excess ratio control.

  5. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  6. Measurement and modeling of gamma-absorbed doses due to atmospheric releases from Los Alamos Meson Physics Facility

    International Nuclear Information System (INIS)

    Bowen, B.M.; Chen, A.I.; Olsen, W.A.; Van Etten, D.M.

    1985-01-01

    Short-term gamma-absorbed doses were measured by one high-pressure ionization chamber (HPIC) at an azimuth of 12 0 from the Los Alamos Meson Physics Facility (LAMPF) stack during the January 1 through February 8 operating cycle. Two HPICs were in the field during the September 8 through December 31 operating cycle, one north and the other north-northeast of the LAMPF stack, but they did not provide reliable data. Meteorological data were also measured at both East Gate and LAMPF. Airborne emission data were taken at the stack. Daily model predictions, based on the integration of modeled 15-min periods, were made for the first LAMPF operating cycle and were compared with the measured data. A comparison of the predicted and measured daily gamma doses due to LAMPF emissions is presented. There is very good correlation between measured and predicted values. During 39-day operating cycles, the model predicted an absorbed dose of 10.3 mrad compared with the 8.8 mrad that was measured, an overprediction of 17%

  7. Description of gasket failure in a 7 cell PEMFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Husar, Attila; Serra, Maria [Institut de Robotica i Informatica Industrial, Parc Tecnologic de Barcelona, Edifici U, C. Llorens i Artigas, 4-6, 2a Planta, 08028 Barcelona (Spain); Kunusch, Cristian [Laboratorio de Electronica Industrial Control e Instrumentacion, Facultad de Ingenieria, UNLP (Argentina)

    2007-06-10

    This article presents the data and the description of a fuel cell stack that failed due to gasket degradation. The fuel cell under study is a 7 cell stack. The unexpected change in several variables such as temperature, pressure and voltage indicated the possible failure of the stack. The stack was monitored over a 6 h period in which data was collected and consequently analyzed to conclude that the fuel cell stack failed due to a crossover leak on the anode inlet port located on the cathode side gasket of cell 2. This stack failure analysis revealed a series of indicators that could be used by a super visional controller in order to initiate a shutdown procedure. (author)

  8. Validating and improving a zero-dimensional stack voltage model of the Vanadium Redox Flow Battery

    Science.gov (United States)

    König, S.; Suriyah, M. R.; Leibfried, T.

    2018-02-01

    Simple, computationally efficient battery models can contribute significantly to the development of flow batteries. However, validation studies for these models on an industrial-scale stack level are rarely published. We first extensively present a simple stack voltage model for the Vanadium Redox Flow Battery. For modeling the concentration overpotential, we derive mass transfer coefficients from experimental results presented in the 1990s. The calculated mass transfer coefficient of the positive half-cell is 63% larger than of the negative half-cell, which is not considered in models published to date. Further, we advance the concentration overpotential model by introducing an apparent electrochemically active electrode surface which differs from the geometric electrode area. We use the apparent surface as fitting parameter for adapting the model to experimental results of a flow battery manufacturer. For adapting the model, we propose a method for determining the agreement between model and reality quantitatively. To protect the manufacturer's intellectual property, we introduce a normalization method for presenting the results. For the studied stack, the apparent electrochemically active surface of the electrode is 41% larger than its geometrical area. Hence, the current density in the diffusion layer is 29% smaller than previously reported for a zero-dimensional model.

  9. 3D monolithically stacked CMOS active pixel sensor detectors for particle tracking applications

    International Nuclear Information System (INIS)

    Passeri, D; Placidi, P; Servoli, L; Meroli, S; Magalotti, D; Marras, A

    2012-01-01

    In this work we propose an innovative approach to particle tracking based on CMOS Active Pixel Sensors layers, monolithically integrated in an all-in-one chip featuring multiple, stacked, fully functional detector layers capable to provide momentum measurement (particle impact point and direction) within a single detector. This will results in a very low material detector, thus dramatically reducing multiple scattering issues. To this purpose, we rely on the capabilities of the CMOS vertical scale integration (3D IC) technology. A first chip prototype has been fabricated within a multi-project run using a 130 nm CMOS Chartered/Tezzaron technology, featuring two layers bonded face-to-face. Tests have been carried out on full 3D structures, providing the functionalities of both tiers. To this purpose, laser scans have been carried out using highly focussed spot size obtaining coincidence responses of the two layers. Tests have been made as well with X-ray sources in order to calibrate the response of the sensor. Encouraging results have been found, fostering the suitability of both the adopted 3D-IC vertical scale fabrication technology and the proposed approach for particle tracking applications.

  10. Micro-XRD Stress And Texture Study Of Inlaid Copper Lines - Influence Of ILD, Liner And Etch Stop Layer

    International Nuclear Information System (INIS)

    Prinz, H.; Zienert, I.; Rinderknecht, J.; Geisler, H.; Zschech, E.; Besser, P.

    2004-01-01

    The influence of ILD, liner and etch stop layer on the room temperature stress state of copper line test structures was examined by micro-XRD. Test structures consisted of large arrays of parallel lines with line widths of 0.18 μm and 1.8 μm. All these parameters have an influence on the room temperature stress state, whereas the variation of the liner and the ILD showed the largest effects. The change from a full low-k stack to a hybrid stack, where SiO2 ILD is use for the 'via layer' only and low-k material for the 'line layer' results in completely different parameter dependencies. The relationship between copper microstructure and the resulting stress in copper lines is discussed

  11. 400 W High Temperature PEM Fuel Cell Stack Test

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2006-01-01

    This work demonstrates the operation of a 30 cell high temperature PEM (HTPEM) fuel cell stack. This prototype stack has been developed at the Institute of Energy Technology, Aalborg University, as a proof-of-concept for a low pressure cathode air cooled HTPEM stack. The membranes used are Celtec...

  12. Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

    International Nuclear Information System (INIS)

    Liu, L.; Xu, J.P.; Chen, J.X.; Ji, F.; Huang, X.D.; Lai, P.T.

    2012-01-01

    A high-k gate stack structure with ultrathin HfON/SiO 2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal–oxide–nitride–oxide–silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si 3 N 4 /SiO 2 as DTL, HfO 2 as CSL and Al 2 O 3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of + 8 V/− 15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/ HfAlO/AlN/(HfON/SiO 2 )/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO 2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. - Highlights: ► An Au/HfAlO/AlN/(HfON/SiO 2 )/Si high-k gate stack structure is proposed. ► A band-engineered dual tunneling layer (HfON/SiO 2 ) is proposed and prepared. ► A good trade-off among the memory characteristics is obtained. ► In-situ sputtering method is employed to fabricate the gate stack structure.

  13. Alternating stacking of ferromagnetic nanosheet and nanoparticle films: heteroassembly and magneto-optical Kerr effect

    International Nuclear Information System (INIS)

    Jia, Baoping; Zhang, Wei; Liu, Hui; Lin, Bencai; Ding, Jianning

    2016-01-01

    Heterostructured multilayer films of two different nanocrystals have been successfully fabricated by layer-by-layer stacking of Ti_0_._8Co_0_._2O_2 nanosheet and Fe_3O_4 nanoparticle films. UV–Vis spectroscopy and AFM observation confirmed the successful alternating deposition in the multilayer buildup process. The average thickness of both Ti_0_._8Co_0_._2O_2 nanosheet and Fe_3O_4 nanoparticle layers was determined to be about 1.4–1.7 and 5 nm, which was in good agreement with TEM results. Magneto-optical Kerr effect measurements demonstrated that the heteroassemblies exhibit gigantic magnetic circular dichroism (MCD) (2 × 10"4 deg/cm) at 320–360 nm, deriving from strong interlayer [Co"2"+]t_2_g–[Fe"3"+]e_g d–d charge transfer which was further confirmed by X-ray photoelectron spectroscopy. Their structure-dependent MCD showed high potential in rational design and construction of high-efficiency magneto-optical devices.

  14. Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg

    2017-03-15

    We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

  15. Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

    KAUST Repository

    Fuentes-Fernandez, E. M A

    2010-11-18

    0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

  16. Carrier transfer in vertically stacked quantum ring-quantum dot chains

    Energy Technology Data Exchange (ETDEWEB)

    Mazur, Yu. I., E-mail: ymazur@uark.edu; Dorogan, V. G.; Benamara, M.; Salamo, G. J. [Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Lopes-Oliveira, V.; Lopez-Richard, V.; Teodoro, M. D.; Marques, G. E. [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Souza, L. D. de [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Wu, J.; Wang, Z. M. [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Tarasov, G. G. [Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev 03028 (Ukraine); Marega, E. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13.566-590 São Carlos, São Paulo (Brazil)

    2015-04-21

    The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

  17. Dynamic Model of High Temperature PEM Fuel Cell Stack Temperature

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2007-01-01

    cathode air cooled 30 cell HTPEM fuel cell stack developed at the Institute of Energy Technology at Aalborg University. This fuel cell stack uses PEMEAS Celtec P-1000 membranes, runs on pure hydrogen in a dead end anode configuration with a purge valve. The cooling of the stack is managed by running......The present work involves the development of a model for predicting the dynamic temperature of a high temperature PEM (HTPEM) fuel cell stack. The model is developed to test different thermal control strategies before implementing them in the actual system. The test system consists of a prototype...... the stack at a high stoichiometric air flow. This is possible because of the PBI fuel cell membranes used, and the very low pressure drop in the stack. The model consists of a discrete thermal model dividing the stack into three parts: inlet, middle and end and predicting the temperatures in these three...

  18. An experimental study of the dynamic behavior of a 2 kW proton exchange membrane fuel cell stack under various loading conditions

    International Nuclear Information System (INIS)

    Jian, Qifei; Zhao, Yang; Wang, Haoting

    2015-01-01

    The dynamic behavior of the PEM (proton exchange membrane) fuel cell stack has great effect on the safety and effective operation of its applications. In this paper, a self-designed bulb-array is used to simulate the various loading conditions and study the dynamic behavior of a 2 kW PEM fuel cell stack. An evaluation index, including oscillation rate, pressure variation and dynamic resistance factor, is used to analyze the transient response of the PEM fuel cell stack. It is observed that the stack current increases about 8.6%, and the Oscillation rate decreases more rapidly after activation. In the step-up load stage, the oscillation rate and the dynamic resistance decrease more rapidly as the external load increases. Due to the periodic anodic purge process, a periodic voltage fluctuation can be seen. In addition, when the stack works in the open-loop state (working without the external load), the transient response of the stack current is significantly affected by the hydrogen humidity and the charge double-layer. - Highlights: • The working time of open-loop state significantly affects the transient response. • Oscillation rate decreases faster as the external load increases. • Dynamic resistance factor decreases as the external load increases. • The periodic anodic purge process leads to a slight periodic oscillation of voltage

  19. Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

    Science.gov (United States)

    Farahmandi, C. Joseph; Dispennette, John M.; Blank, Edward; Kolb, Alan C.

    1999-01-19

    A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals.

  20. Enhancement of stack ventilation in hot and humid climate using a combination of roof solar collector and vertical stack

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Wardah Fatimah Mohammad; Salleh, Elias [Department of Architecture, Faculty of Design and Architecture, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Adam, Nor Mariah [Department of Mechanical and Manufacturing Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Sapian, Abdul Razak [Department of Architecture, Kulliyyah of Architecture and Environmental Design, International Islamic University Malaysia, P.O. Box 10, 50728 Kuala Lumpur (Malaysia); Yusof Sulaiman, Mohamad [Solar Energy Research Institute, 3rd Floor, Tun Sri Lanang Library Building, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2010-10-15

    In the hot and humid climate, stack ventilation is inefficient due to small temperature difference between the inside and outside of naturally ventilated buildings. Hence, solar induced ventilation is a feasible alternative in enhancing the stack ventilation. This paper aims to investigate the effectiveness of a proposed solar induced ventilation strategy, which combines a roof solar collector and a vertical stack, in enhancing the stack ventilation performance in the hot and humid climate. The methodology selected for the investigation is physical experimental modelling which was carried out in the actual environment. The results are presented and discussed in terms of two performance variables: air temperature and air velocity. The findings indicate that the proposed strategy is able to enhance the stack ventilation, both in semi-clear sky and overcast sky conditions. The highest air temperature difference between the air inside the stack and the ambient air (T{sub i}-T{sub o}) is achieved in the semi-clear sky condition, which is about 9.9 C (45.8 C-35.9 C). Meanwhile, in the overcast sky condition, the highest air temperature difference (T{sub i}-T{sub o}) is 6.2 C (39.3 C-33.1 C). The experimental results also indicate good agreement with the theoretical results for the glass temperature, the air temperature in the roof solar collector's channel and the absorber temperature. The findings also show that wind has significant effect to the induced air velocity by the proposed strategy. (author)

  1. Formation and Characterization of Stacked Nanoscale Layers of Polymers and Silanes on Silicon Surfaces

    Science.gov (United States)

    Ochoa, Rosie; Davis, Brian; Conley, Hiram; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

    2008-10-01

    Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Complete and consistent formation of nanoscale layers of silanes and polymers is a necessary first step for chemical patterning. We explored methods of silanizing silicon substrates for the purpose of functionalizing the surfaces. The chemical functionalization, stability, flatness, and repeatability of the process was characterized by use of ellipsometry, water contact angle, and Atomic Force Microscopy (AFM). We found that forming the highest quality functionalized surfaces was accomplished through use of chemical vapor deposition (CVD). Specifically, surfaces were plasma cleaned and hydrolyzed before the silane was applied. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer. The chemical functionalization, stability, flatness, and repeatability of the process was also characterized for the polymer layer using ellipsometry, water contact angle, and AFM.

  2. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Carrington, Peter James, E-mail: p.carrington@lancaster.ac.uk [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Mahajumi, Abu Syed [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Wagener, Magnus C.; Botha, Johannes Reinhardt [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Zhuang Qian; Krier, Anthony [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2012-05-15

    We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

  3. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    International Nuclear Information System (INIS)

    Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C.; Botha, Johannes Reinhardt; Zhuang Qian; Krier, Anthony

    2012-01-01

    We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

  4. Physical properties of layered homologous RE-B-C(N) compounds

    International Nuclear Information System (INIS)

    Mori, Takao; Zhang Fuxiang; Leithe-Jasper, Andreas

    2004-01-01

    Physical properties of a series of homologous RE-B-C(N) B 12 cluster compounds REB 17 CN, REB 22 C 2 N, and REB 28.5 C 4 (RE=Er,Ho) were investigated. The structures of the compounds are layer-like along the c-axis, with rare earth and B 6 octahedral layers separated by B 12 icosahedral and C-B-C chain layers whose number increases successively from two B 12 layers for the REB 17 CN compound to four for the REB 28.5 C 4 compound. The rare earth atoms are configured in two triangular flat layers which are stacked on top of one another in AB stacking where the nearest-neighbor rare earth directions are the three atoms forming a triangle in the adjacent layer. The series of homologous compounds exhibit a spin glass transition with T f shifting in correspondence with variations of the basal plane lattice constants, consistent with the magnetic interaction being effective in the basal planes. The isothermal remanent magnetization shows a stretched exponential decay I m (t)∝ exp[-Ct -(1-n) ]. Exponents determined for the different homologous compounds were scaled as a function of T r =T/T f and found to follow the empirical dependency determined for typical spin glasses. It is indicated that a mixture of disorder originating from the partial occupancy of the rare earth sites and frustration of interactions due to the unique configuration is responsible for the manifestation of spin glass transitions in these homologous systems

  5. Learning SaltStack

    CERN Document Server

    Myers, Colton

    2015-01-01

    If you are a system administrator who manages multiple servers, then you know how difficult it is to keep your infrastructure in line. If you've been searching for an easier way, this book is for you. No prior experience with SaltStack is required.

  6. Continuum-Scale Modeling of Liquid Redistribution in a Stack of Thin Hydrophilic Fibrous Layers

    NARCIS (Netherlands)

    Tavangarrad, A.H.; Mohebbi, Behzad; Hassanizadeh, S.M.|info:eu-repo/dai/nl/074974424; Rosati, Rodrigo; Claussen, Jan; Blümich, Bernhard

    Macroscale three-dimensional modeling of fluid flow in a thin porous layer under unsaturated conditions is a challenging task. One major issue is that such layers do not satisfy the representative elementary volume length-scale requirement. Recently, a new approach, called reduced continua model

  7. Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

    2015-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

  8. Fast principal component analysis for stacking seismic data

    Science.gov (United States)

    Wu, Juan; Bai, Min

    2018-04-01

    Stacking seismic data plays an indispensable role in many steps of the seismic data processing and imaging workflow. Optimal stacking of seismic data can help mitigate seismic noise and enhance the principal components to a great extent. Traditional average-based seismic stacking methods cannot obtain optimal performance when the ambient noise is extremely strong. We propose a principal component analysis (PCA) algorithm for stacking seismic data without being sensitive to noise level. Considering the computational bottleneck of the classic PCA algorithm in processing massive seismic data, we propose an efficient PCA algorithm to make the proposed method readily applicable for industrial applications. Two numerically designed examples and one real seismic data are used to demonstrate the performance of the presented method.

  9. Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

    Science.gov (United States)

    Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

    2009-01-01

    A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.

  10. Topological chiral phonons in center-stacked bilayer triangle lattices

    Science.gov (United States)

    Xu, Xifang; Zhang, Wei; Wang, Jiaojiao; Zhang, Lifa

    2018-06-01

    Since chiral phonons were found in an asymmetric two-dimensional hexagonal lattice, there has been growing interest in the study of phonon chirality, which were experimentally verified very recently in monolayer tungsten diselenide (2018 Science 359 579). In this work, we find chiral phonons with nontrivial topology in center-stacked bilayer triangle lattices. At the Brillouin-zone corners, (), circularly polarized phonons and nonzero phonon Berry curvature are observed. Moreover, we find that the phonon chirality remain robust with changing sublattice mass ratio and interlayer coupling. The chiral phonons at the valleys are demonstrated in doubler-layer sodium chloride along the [1 1 1] direction. We believe that the findings on topological chiral phonons in triangle lattices will give guidance in the study of chiral phonons in real materials and promote the phononic applications.

  11. A Piezoelectric PZT Ceramic Mulitlayer Stack for Energy Harvesting Under Dynamic Forces

    Science.gov (United States)

    Xu, Tian-Bing; Siochi, Emilie J.; Kang, Jin Ho; Zuo, Lei; Zhou, Wanlu; Tang, Xiudong; Jiang, Xiaoning

    2011-01-01

    Piezoelectric energy harvesting transducers (PEHTs) are commonly used in motion/vibration energy scavenging devices. To date, most researchers have focused on energy harvesting at narrow bandwidths around the mechanical resonance frequency, and most piezoelectric harvesting devices reported in the literature have very low effective piezoelectric coefficient (d(sub eff)) (coefficients of about 100 pC/N. The level of harvested electrical power for CBPEHTs is on the order of microW even at resonance mode. In order to harvest more electrical energy across broader bandwidth, high effective piezoelectric coefficient structures are needed. In this study, we investigate a "33" longitudinal mode, piezoelectric PZT ceramic multilayer stack (PZT-Stack) with high effective piezoelectric coefficient for high-performance PEHTs. The PZT-Stack is composed of 300 layers of 0.1 mm thick PZT plates, with overall dimensions of 32.4 mm X 7.0 mm X 7.0 mm. Experiments were carried out with dynamic forces in a broad bandwidth ranging from 0.5 Hz to 25 kHz. The measured results show that the effective piezoelectric coefficient of the PZT-stack is about 1 X 10(exp 5) pC/N at off-resonance frequencies and 1.39 X 10(exp 6) pC/N at resonance, which is order of magnitude larger than that of traditional PEHTs. The effective piezoelectric coefficients (d(sub eff)) do not change significantly with applied dynamic forces having root mean square (RMS) values ranging from 1 N to 40 N. In resonance mode, 231 mW of electrical power was harvested at 2479 Hz with a dynamic force of 11.6 N(sub rms), and 7.6 mW of electrical power was generated at a frequency of 2114 Hz with 1 N(sub rms) dynamic force. In off-resonance mode, an electrical power of 18.7 mW was obtained at 680 Hz with a 40 N(sub rms) dynamic force. A theoretical model of energy harvesting for the PZT-Stack is established. The modeled results matched well with experimental measurements. This study demonstrated that high effective

  12. Generalized-stacking-fault energy and twin-boundary energy of hexagonal close-packed Au: A first-principles calculation.

    Science.gov (United States)

    Wang, Cheng; Wang, Huiyuan; Huang, Tianlong; Xue, Xuena; Qiu, Feng; Jiang, Qichuan

    2015-05-22

    Although solid Au is usually most stable as a face-centered cubic (fcc) structure, pure hexagonal close-packed (hcp) Au has been successfully fabricated recently. However, the phase stability and mechanical property of this new material are unclear, which may restrict its further applications. Here we present the evidence that hcp → fcc phase transformation can proceed easily in Au by first-principles calculations. The extremely low generalized-stacking-fault (GSF) energy in the basal slip system implies a great tendency to form basal stacking faults, which opens the door to phase transformation from hcp to fcc. Moreover, the Au lattice extends slightly within the superficial layers due to the self-assembly of alkanethiolate species on hcp Au (0001) surface, which may also contribute to the hcp → fcc phase transformation. Compared with hcp Mg, the GSF energies for non-basal slip systems and the twin-boundary (TB) energies for and twins are larger in hcp Au, which indicates the more difficulty in generating non-basal stacking faults and twins. The findings provide new insights for understanding the nature of the hcp → fcc phase transformation and guide the experiments of fabricating and developing materials with new structures.

  13. Effect of non-local equilibrium on minimal thermal resistance porous layered systems

    International Nuclear Information System (INIS)

    Leblond, Genevieve; Gosselin, Louis

    2008-01-01

    In this paper, the cooling of a heat-generating surface by a stacking of porous media (e.g., metallic foam) through which fluid flows parallel to the surface is considered. A two-temperature model is proposed to account for non-local thermal equilibrium (non-LTE). A scale analysis is performed to determine temperatures profiles in the boundary layer regime. The hot spot temperature is minimized with respect to the three design variables of each layer: porosity, pore diameter, and material. Global cost and mass are constrained. The optimization is performed with a hybrid genetic algorithm (GA) including local search to enhance convergence and repeatability. Results demonstrate that the optimized stacks do not operate in LTE. Therefore, we show that assuming LTE might result in underestimation of the hot spot temperature, and into different final designs as well

  14. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

    International Nuclear Information System (INIS)

    Likhachev, D.V.

    2015-01-01

    During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

  15. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Likhachev, D.V., E-mail: dmitriy.likhachev@globalfoundries.com

    2015-08-31

    During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

  16. A Novel Multimodal Biometrics Recognition Model Based on Stacked ELM and CCA Methods

    Directory of Open Access Journals (Sweden)

    Jucheng Yang

    2018-04-01

    Full Text Available Multimodal biometrics combine a variety of biological features to have a significant impact on identification performance, which is a newly developed trend in biometrics identification technology. This study proposes a novel multimodal biometrics recognition model based on the stacked extreme learning machines (ELMs and canonical correlation analysis (CCA methods. The model, which has a symmetric structure, is found to have high potential for multimodal biometrics. The model works as follows. First, it learns the hidden-layer representation of biological images using extreme learning machines layer by layer. Second, the canonical correlation analysis method is applied to map the representation to a feature space, which is used to reconstruct the multimodal image feature representation. Third, the reconstructed features are used as the input of a classifier for supervised training and output. To verify the validity and efficiency of the method, we adopt it for new hybrid datasets obtained from typical face image datasets and finger-vein image datasets. Our experimental results demonstrate that our model performs better than traditional methods.

  17. SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

    Science.gov (United States)

    Watanabe, Kenta; Terashima, Daiki; Nozaki, Mikito; Yamada, Takahiro; Nakazawa, Satoshi; Ishida, Masahiro; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.

  18. Stack Monitor Operating Experience Review

    International Nuclear Information System (INIS)

    Cadwallader, L.C.; Bruyere, S.A.

    2009-01-01

    Stack monitors are used to sense radioactive particulates and gases in effluent air being vented from rooms of nuclear facilities. These monitors record the levels and types of effluents to the environment. This paper presents the results of a stack monitor operating experience review of the U.S. Department of Energy (DOE) Occurrence Reporting and Processing System (ORPS) database records from the past 18 years. Regulations regarding these monitors are briefly described. Operating experiences reported by the U.S. DOE and in engineering literature sources were reviewed to determine the strengths and weaknesses of these monitors. Electrical faults, radiation instrumentation faults, and human errors are the three leading causes of failures. A representative 'all modes' failure rate is 1E-04/hr. Repair time estimates vary from an average repair time of 17.5 hours (with spare parts on hand) to 160 hours (without spare parts on hand). These data should support the use of stack monitors in any nuclear facility, including the National Ignition Facility and the international ITER project.

  19. Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

    Czech Academy of Sciences Publication Activity Database

    da Costa, Sara; Ek Weis, Johan; Frank, Otakar; Kalbáč, Martin

    2016-01-01

    Roč. 98, MAR 2016 (2016), s. 592-598 ISSN 0008-6223 R&D Projects: GA MŠk LH13022 Institutional support: RVO:61388955 Keywords : Multi-layered graphene * Applied research * Plasma applications Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 6.337, year: 2016

  20. Study and Development of an OpenStack solution

    OpenAIRE

    Jorba Brosa, Maria

    2014-01-01

    Estudi i desenvolupament d'una solució de virtualització amb Openstack. Es farà un especial èmfasi en la part de seguretat. Deployment of a solution based in OpenStack for the creation of an Infrastructure service cloud. Implementación de una solución basada en OpenStack para la creación de una infrastructura de servicios cloud. Implementació d'una solució basada en OpenStack per la creació d'una infrastructura de serveis cloud.

  1. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Elder, Robert M., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L. [U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  2. Determination of thephysico-chemical 131I species in the exhausts and stack effluent of a PWR power plant

    International Nuclear Information System (INIS)

    Deuber, H.; Wilhelm, J.G.

    1979-01-01

    To quantify the credit that can be granted in the assessment of the 131 I ingestion doses and the improvement that can be achieved in the ventilation systems if differences of the physico-chemical 131 I species with respect to the environmental impact are taken into account, the fractions of the 131 I species were determined in the stack effluent and in various exhausts of a 1300 MW/sub e/ PWR power plant during a period of 3 months. Based on these measurements, calculations for different cases of filtration of the main exhausts for iodine were carried out. The average fractions of elemental and organic 131 I were about 70 and 30% respectively in the stack effluent during the time indicated. Elem. 131 I orginated mainly from the hoods in which samples of the primary coolant are taken and processed. Org. 131 I was mainly contributed by the equipment compartments. If the hood exhaust had been filtered, as was the case with the equipment compartment exhaust, the fractions of elem. and org. 131 I would have been on the order of 50% each and the calculated 131 I ingestion doses would have been a factor of 3 lower

  3. Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

    KAUST Repository

    Chiu, Ming-Hui; Li, Ming-Yang; Zhang, Wengjing; Hsu, Wei-Ting; Chang, Wen-Hao; Terrones, Mauricio; Terrones, Humberto; Li, Lain-Jong

    2014-01-01

    Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E '' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

  4. Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

    KAUST Repository

    Chiu, Ming-Hui

    2014-09-23

    Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \\'\\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

  5. Exploring online evolution of network stacks

    OpenAIRE

    Imai, Pierre

    2013-01-01

    Network stacks today follow a one-size-fits-all philosophy. They are mostly kept unmodified due to often prohibitive costs of engineering, deploying and administrating customisation of the networking software, with the Internet stack architecture still largely being based on designs and assumptions made for the ARPANET 40 years ago. We venture that heterogeneous and rapidly changing networks of the future require, in order to be successful, run-time self-adaptation mechanisms at different tim...

  6. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  7. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  8. Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

    Science.gov (United States)

    Zhang, Tian; Lin, Jia-He; Yu, Yan-Mei; Chen, Xiang-Rong; Liu, Wu-Ming

    2015-01-01

    Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topological phase transition from normal to QSH state in bilayer phosphorene, accompanied by band-inversion that changes number from 0 to 1, which is highly dependent on interlayer stacking. When the bottom layer is shifted by 1/2 unit-cell along zigzag/armchair direction with respect to the top layer, the maximum topological bandgap 92.5 meV is sufficiently large to realize QSH effect even at room-temperature. An optical measurement of QSH effect is therefore suggested in view of the wide optical absorption spectrum extending to far infra-red, making bilayer phosphorene a promising candidate for opto-spintronic devices. PMID:26370771

  9. Radiation damage and life-time evaluation of RBMK graphite stack

    Energy Technology Data Exchange (ETDEWEB)

    Platonov, P A; Chugunov, O K; Manevsky, V N; Karpukhin, V I [Russian Research Centre Kurchatov Inst., Moscow (Russian Federation). Reactor Material Div.

    1996-08-01

    At the present time there are 11 NPP units with RBMK reactors in operation in Russia, with the oldest now in operation 22 years. Design life-time of the RBMK-1000 reactor is 30 years. This paper addresses the evaluation of RBMK graphite stack life-time. It is the practice in Russia to evaluate the reliability of the channel reactor graphite stack using at least three criteria: degradation of physical-mechanical properties of graphite, preservation of the graphite brick integrity, and degradation of the graphite stack as a structure. Stack life-time evaluation by different criteria indicates that the most realistic approach may be realized on the basis of the criteria of brick cracking and degradation of the graphite stack as a structure. The RBMK reactor graphite stack life-time depends on its temperature and for different units it may be different. (author). 2 refs, 10 figs.

  10. Vector Fields and Flows on Differentiable Stacks

    DEFF Research Database (Denmark)

    A. Hepworth, Richard

    2009-01-01

    This paper introduces the notions of vector field and flow on a general differentiable stack. Our main theorem states that the flow of a vector field on a compact proper differentiable stack exists and is unique up to a uniquely determined 2-cell. This extends the usual result on the existence...... of vector fields....

  11. A high-performance aluminum-feed microfluidic fuel cell stack

    Science.gov (United States)

    Wang, Yifei; Leung, Dennis Y. C.

    2016-12-01

    In this paper, a six-cell microfluidic fuel cell (MFC) stack is demonstrated. Low-cost aluminum is fed directly to the stack, which produces hydrogen fuel on site, through the Al-H2O reaction. This design is not only cost-efficient, but also eliminates the need for hydrogen storage. Unlike the conventional MFC stacks which generally require complex electrolyte distribution and management, the present Al-feed MFC stack requires only a single electrolyte stream, flowing successively through individual cells, which is finally utilized for hydrogen generation. In this manner, the whole system is greatly simplified while the operational robustness is also improved. With 2 M sodium hydroxide solution as electrolyte and kitchen foil Al as fuel, the present six-cell stack (in series) exhibits an open circuit voltage of nearly 6 V and a peak power density of 180.6 mWcm-2 at room temperature. In addition, an energy density of 1 Whg-1(Al) is achieved, which is quite high and comparable with its proton exchange membrane-based counterparts. Finally, pumpless operation of the present stack, together with its practical applications are successfully demonstrated, including lightening LED lights, driving an electric fan, and cell phone charging.

  12. High Gain and High Directive of Antenna Arrays Utilizing Dielectric Layer on Bismuth Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    F. H. Wee

    2012-01-01

    Full Text Available A high gain and high directive microstrip patch array antenna formed from dielectric layer stacked on bismuth titanate (BiT ceramics have been investigated, fabricated, and measured. The antennas are designed and constructed with a combination of two-, four-, and six-BiT elements in an array form application on microwave substrate. For gain and directivity enhancement, a layer of dielectric was stacked on the BiT antenna array. We measured the gain and directivity of BiT array antennas with and without the dielectric layer and found that the gain of BiT array antenna with the dielectric layer was enhanced by about 1.4 dBi of directivity and 1.3 dB of gain over the one without the dielectric layer at 2.3 GHz. The impedance bandwidth of the BiT array antenna both with and without the dielectric layer is about 500 MHz and 350 MHz, respectively, which is suitable for the application of the WiMAX 2.3 GHz system. The utilization of BiT ceramics that covers about 90% of antenna led to high radiation efficiency, and small-size antennas were produced. In order to validate the proposed design, theoretical and measured results are provided and discussed.

  13. SU-E-J-27: Shifting Multiple EPID Imager Layers to Improve Image Quality and Resolution in MV CBCT

    Energy Technology Data Exchange (ETDEWEB)

    Chen, H; Rottmann, J; Yip, S; Berbeco, R [Brigham and Women’s Hospital, Boston, Massachusetts (United States); Morf, D; Fueglistaller, R; Star-Lack, J; Zentai, G [Varian Medical Systems, Palo Alto, CA (United States)

    2015-06-15

    Purpose: Vertical stacking of four conventional EPID layers can improve DQE for MV-CBCT applications. We hypothesize that shifting each layer laterally by half a pixel relative to the layer above, will improve the contrast-to-noise ratio (CNR) and image resolution. Methods: For CNR assessment, a 20 cm diameter digital phantom with 8 inserts is created. The attenuation coefficient of the phantom is similar to lung at the average energy of a 6 MV photon beam. The inserts have attenuations 1, 2…8 times of lung. One of the inserts is close to soft tissue, resembling the case of a tumor in lung. For resolution assessment, a digital phantom featuring a bar pattern is created. The phantom has an attenuation coefficient similar to soft tissue and the bars have an attenuation coefficient of calcium sulfate. A 2 MeV photon beam is attenuated through these phantoms and hits each of the four stacked detector layers. Each successive layer is shifted by half a pixel in the x only, y only, and x and y (combined) directions, respectively. Blurring and statistical noise are added to the projections. Projections from one, two, three and four layers are used for reconstruction. CNR and image resolution are evaluated and compared. Results: When projections from multiple layers are combined for reconstruction, CNR increases with the number of layers involved. CNR in reconstructions from two, three and four layers are 1.4, 1.7 and 1.99 times that from one layer. The resolution from the shifted four layer detector is also improved from a single layer. In a comparison between one layer versus four layers in this preliminary study, the resolution from four shifted layers is at least 20% better. Conclusion: Layer-shifting in a stacked EPID imager design enhances resolution as well as CNR for half scan MV-CBCT. The project described was supported, in part, by a grant from Varian Medical Systems, Inc., and Award No. R01CA188446-01 from the National Cancer Institute. The content is solely

  14. Dynamic stack testing and HiL simulation

    Energy Technology Data Exchange (ETDEWEB)

    Randolf, G. [GRandalytics, Honolulu, HI (United States)

    2009-07-01

    The applications for fuel cell and stack deployment have changed rapidly over the years, from stationary backup supplies to highly dynamic automotive power systems. As a result, testing must keep up in order to ensure mature products of high quality. A new breed of stack test stations has been designed, based on a newly developed single cell, high dynamic hardware-in-the-loop (HiL) simulator in order to meet the growing demand of realistic fuel cell testing scenarios for aviation and automotive industries. The paper described and illustrated the test station architecture and outline of communication nodes. The paper also described the voltage monitor and presented schematics of voltage monitoring modules. The basic requirements of the architecture that were presented included low latency; flexible communication with simulation targets and other data input/output nodes; scalability to various stack sizes; and, safety and reliability. It was concluded that first tests with the voltage monitoring system not only confirmed the design, high throughput and signal quality, but also suggested another application, namely a stack impedance spectrometer for each individual cell. 1 ref., 3 figs.

  15. Thermal stress analysis of a planar SOFC stack

    Science.gov (United States)

    Lin, Chih-Kuang; Chen, Tsung-Ting; Chyou, Yau-Pin; Chiang, Lieh-Kwang

    The aim of this study is, by using finite element analysis (FEA), to characterize the thermal stress distribution in a planar solid oxide fuel cell (SOFC) stack during various stages. The temperature profiles generated by an integrated thermo-electrochemical model were applied to calculate the thermal stress distributions in a multiple-cell SOFC stack by using a three-dimensional (3D) FEA model. The constructed 3D FEA model consists of the complete components used in a practical SOFC stack, including positive electrode-electrolyte-negative electrode (PEN) assembly, interconnect, nickel mesh, and gas-tight glass-ceramic seals. Incorporation of the glass-ceramic sealant, which was never considered in previous studies, into the 3D FEA model would produce more realistic results in thermal stress analysis and enhance the reliability of predicting potential failure locations in an SOFC stack. The effects of stack support condition, viscous behavior of the glass-ceramic sealant, temperature gradient, and thermal expansion mismatch between components were characterized. Modeling results indicated that a change in the support condition at the bottom frame of the SOFC stack would not cause significant changes in thermal stress distribution. Thermal stress distribution did not differ significantly in each unit cell of the multiple-cell stack due to a comparable in-plane temperature profile. By considering the viscous characteristics of the glass-ceramic sealant at temperatures above the glass-transition temperature, relaxation of thermal stresses in the PEN was predicted. The thermal expansion behavior of the metallic interconnect/frame had a greater influence on the thermal stress distribution in the PEN than did that of the glass-ceramic sealant due to the domination of interconnect/frame in the volume of a planar SOFC assembly.

  16. Development of the morphology during functional stack build-up of P3HT:PCBM bulk heterojunction solar cells with inverted geometry.

    Science.gov (United States)

    Wang, Weijia; Pröller, Stephan; Niedermeier, Martin A; Körstgens, Volker; Philipp, Martine; Su, Bo; Moseguí González, Daniel; Yu, Shun; Roth, Stephan V; Müller-Buschbaum, Peter

    2015-01-14

    Highly efficient poly(3-hexylthiophene-2,5-diyl) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction solar cells are achieved by using an inverted geometry. The development of the morphology is investigated as a function of the multilayer stack assembling during the inverted solar cell preparation. Atomic force microscopy is used to reveal the surface morphology of each stack, and the inner structure is probed with grazing incidence small-angle X-ray scattering. It is found that the smallest domain size of P3HT is introduced by replicating the fluorine-doped tin oxide structure underneath. The structure sizes of the P3HT:PCBM active layer are further optimized after thermal annealing. Compared to devices with standard geometry, the P3HT:PCBM layer in the inverted solar cells shows smaller domain sizes, which are much closer to the exciton diffusion length in the polymer. The decrease in domain sizes is identified as the main reason for the improvement of the device performance.

  17. Atomic layer deposition for high-efficiency crystalline silicon solar cells

    NARCIS (Netherlands)

    Macco, B.; van de Loo, B.W.H.; Kessels, W.M.M.; Bachmann, J.

    2017-01-01

    This chapter illustrates that Atomic Layer Deposition (ALD) is in fact an enabler of novel high-efficiency Si solar cells, owing to its merits such as a high material quality, precise thickness control, and the ability to prepare film stacks in a well-controlled way. It gives an overview of the

  18. Optimization of hole generation in Ti/CFRP stacks

    Science.gov (United States)

    Ivanov, Y. N.; Pashkov, A. E.; Chashhin, N. S.

    2018-03-01

    The article aims to describe methods for improving the surface quality and hole accuracy in Ti/CFRP stacks by optimizing cutting methods and drill geometry. The research is based on the fundamentals of machine building, theory of probability, mathematical statistics, and experiment planning and manufacturing process optimization theories. Statistical processing of experiment data was carried out by means of Statistica 6 and Microsoft Excel 2010. Surface geometry in Ti stacks was analyzed using a Taylor Hobson Form Talysurf i200 Series Profilometer, and in CFRP stacks - using a Bruker ContourGT-Kl Optical Microscope. Hole shapes and sizes were analyzed using a Carl Zeiss CONTURA G2 Measuring machine, temperatures in cutting zones were recorded with a FLIR SC7000 Series Infrared Camera. Models of multivariate analysis of variance were developed. They show effects of drilling modes on surface quality and accuracy of holes in Ti/CFRP stacks. The task of multicriteria drilling process optimization was solved. Optimal cutting technologies which improve performance were developed. Methods for assessing thermal tool and material expansion effects on the accuracy of holes in Ti/CFRP/Ti stacks were developed.

  19. Project W-420 stack monitoring system upgrades

    International Nuclear Information System (INIS)

    CARPENTER, K.E.

    1999-01-01

    This project will execute the design, procurement, construction, startup, and turnover activities for upgrades to the stack monitoring system on selected Tank Waste Remediation System (TWRS) ventilation systems. In this plan, the technical, schedule, and cost baselines are identified, and the roles and responsibilities of project participants are defined for managing the Stack Monitoring System Upgrades, Project W-420

  20. White Organic Light-Emitting Diodes Using Two Phosphorescence Materials in a Starburst Hole-Transporting Layer

    Directory of Open Access Journals (Sweden)

    Tomoya Inden

    2012-01-01

    Full Text Available We fabricated two kinds of white organic light-emitting diodes (WOLEDs; one consisted of two emissive materials of red and blue, and the other of three emissive materials of red, green, and blue. The red and blue emissive materials were phosphorescent. We evaluated the thickness dependence of the CIE coordinate, the external quantum efficiency (EQE, and the luminance by changing the thicknesses of the Ir(btp2acac and FIrpic layers. Samples consisting of three emissive materials revealed the best CIE coordinate and the best EQE in the same sample structure. On the other hand, the samples consisting of two emissive materials revealed the best CIE coordinate and the best EQE in different structures. The best CIE coordinate of (0.33, 0.36 was observed by changing the thicknesses of the stacked active layers. The best EQE was 9.73%, which was observed in the sample consisting of different thickness of stacked active layers.

  1. On-stack two-dimensional conversion of MoS2 into MoO3

    Science.gov (United States)

    Yeoung Ko, Taeg; Jeong, Areum; Kim, Wontaek; Lee, Jinhwan; Kim, Youngchan; Lee, Jung Eun; Ryu, Gyeong Hee; Park, Kwanghee; Kim, Dogyeong; Lee, Zonghoon; Lee, Min Hyung; Lee, Changgu; Ryu, Sunmin

    2017-03-01

    Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D ‘on-stack’ chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.

  2. Validation of a HT-PEMFC stack for CHP applications

    Energy Technology Data Exchange (ETDEWEB)

    Pasupathi, S.; Ulleberg, Oe. [Western Cape Univ. (South Africa). HySA Systems, SAIAMC; Bujlo, P. [Western Cape Univ. (South Africa). HySA Systems, SAIAMC; Electrotechnical Institute Wroclaw Division (Poland); Scholta, J. [Centre for Solar Energy and Hydrogen Research (ZSW) (Germany)

    2010-07-01

    Fuel cell systems are very attractive for stationary co-generation applications as they can produce heat and electricity efficiently in a decentralized and environmentally friendly manner. PEMFC stacks operating at temperatures above 120 C, specifically in the range of 140-180 C, are ideal for co-generation purposes. In this study, preliminary results from a HTPEMFC stack designed for CHP applications is presented and discussed. A short, five-cell, HT-PEMFC stack was assembled with Celtec- P-2100 MEAs and validated in terms of electrical performance. The stack was operated with hydrogen and air at 160 C and the utilization curves for anode and cathode were recorded for a wide range of gas utilization at a current density of 0.52 A/cm{sup 2}. The current voltage characteristic was measured at optimal utilization values at 160 C. A 1kW stack is assembled and is currently being validated for its performance under various operating conditions for use in CHP applications. (orig.)

  3. Routes to a commercially viable PEM fuel cell stack

    Energy Technology Data Exchange (ETDEWEB)

    Newton, J.; Foster, S.E.; Hodgson, D.; Marrett, A.

    2002-07-01

    This report describes the results of a project to design and build a 10 kW{sub e} proton exchange membrane fuel cell (PEMFC) stack, including membrane electrode assemblies (MEAs), bipolar plates and stack hardware. The aim was to prove the design concept and to demonstrate functionality by operating the stack at >1 kW{sub e}/L and 500 W/kg for 200 hours operation. The project was extended to include the assembly and testing of two additional 1 kW{sub e} PEMFC stacks based on coated metal components. Low equivalent weight perfluorinated ionomer ion exchange membranes were prepared and were found to give a superior electrochemical performance to commercial materials. A technique to etch various stainless steel grades and control processes was successfully developed and optimised. Coatings for stainless steel and titanium were successfully developed and met the required performance criteria. All PEMFC stack components were selected and designed to enable subsequent commercial manufacture.

  4. Development of the electric utility dispersed use PAFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Horiuchi, Hiroshi; Kotani, Ikuo [Mitsubishi Electric Co., Kobe (Japan); Morotomi, Isamu [Kansai Electric Power Co., Hyogo (Japan)] [and others

    1996-12-31

    Kansai Electric Power Co. and Mitsubishi Electric Co. have been developing the electric utility dispersed use PAFC stack operated under the ambient pressure. The new cell design have been developed, so that the large scale cell (1 m{sup 2} size) was adopted for the stack. To confirm the performance and the stability of the 1 m{sup 2} scale cell design, the short stack study had been performed.

  5. Design and implementation of wireless dose logger network for radiological emergency decision support system

    International Nuclear Information System (INIS)

    Gopalakrishnan, V.; Baskaran, R.; Venkatraman, B.

    2016-01-01

    A decision support system (DSS) is implemented in Radiological Safety Division, Indira Gandhi Centre for Atomic Research for providing guidance for emergency decision making in case of an inadvertent nuclear accident. Real time gamma dose rate measurement around the stack is used for estimating the radioactive release rate (source term) by using inverse calculation. Wireless gamma dose logging network is designed, implemented, and installed around the Madras Atomic Power Station reactor stack to continuously acquire the environmental gamma dose rate and the details are presented in the paper. The network uses XBee–Pro wireless modules and PSoC controller for wireless interfacing, and the data are logged at the base station. A LabView based program is developed to receive the data, display it on the Google Map, plot the data over the time scale, and register the data in a file to share with DSS software. The DSS at the base station evaluates the real time source term to assess radiation impact.

  6. Design and implementation of wireless dose logger network for radiological emergency decision support system.

    Science.gov (United States)

    Gopalakrishnan, V; Baskaran, R; Venkatraman, B

    2016-08-01

    A decision support system (DSS) is implemented in Radiological Safety Division, Indira Gandhi Centre for Atomic Research for providing guidance for emergency decision making in case of an inadvertent nuclear accident. Real time gamma dose rate measurement around the stack is used for estimating the radioactive release rate (source term) by using inverse calculation. Wireless gamma dose logging network is designed, implemented, and installed around the Madras Atomic Power Station reactor stack to continuously acquire the environmental gamma dose rate and the details are presented in the paper. The network uses XBee-Pro wireless modules and PSoC controller for wireless interfacing, and the data are logged at the base station. A LabView based program is developed to receive the data, display it on the Google Map, plot the data over the time scale, and register the data in a file to share with DSS software. The DSS at the base station evaluates the real time source term to assess radiation impact.

  7. Design and implementation of wireless dose logger network for radiological emergency decision support system

    Energy Technology Data Exchange (ETDEWEB)

    Gopalakrishnan, V.; Baskaran, R.; Venkatraman, B. [Radiation Impact Assessment Section, Radiological Safety Division, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India)

    2016-08-15

    A decision support system (DSS) is implemented in Radiological Safety Division, Indira Gandhi Centre for Atomic Research for providing guidance for emergency decision making in case of an inadvertent nuclear accident. Real time gamma dose rate measurement around the stack is used for estimating the radioactive release rate (source term) by using inverse calculation. Wireless gamma dose logging network is designed, implemented, and installed around the Madras Atomic Power Station reactor stack to continuously acquire the environmental gamma dose rate and the details are presented in the paper. The network uses XBee–Pro wireless modules and PSoC controller for wireless interfacing, and the data are logged at the base station. A LabView based program is developed to receive the data, display it on the Google Map, plot the data over the time scale, and register the data in a file to share with DSS software. The DSS at the base station evaluates the real time source term to assess radiation impact.

  8. Optical and photoelectrochemical studies on Ag{sub 2}O/TiO{sub 2} double-layer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chuan, E-mail: cli10@yahoo.com [Department of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan 11221 (China); Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan, Taiwan 32001 (China); Hsieh, J.H. [Department of Materials Engineering, Ming Chi University of Technology, Taishan, Taipei, Taiwan 24301 (China); Cheng, J.C. [Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan 10608 (China); Huang, C.C. [Department of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan 11221 (China)

    2014-11-03

    When two different oxides films stacked together, if the absorption (upper) layer has both its conduction and valence bands more negatively lower than that of the layer underneath, then the photo-excited electrons can be forwarded to the underneath layer to become an effect of energy storage. Recent studies discovered that the double-layers of Cu{sub 2}O/TiO{sub 2} films possess such capacity. In order to investigate this specific phenomenon, we use a DC magnetron reactive sputtering to deposit a double-layer of Ag{sub 2}O/TiO{sub 2} films on glass substrate. The film thicknesses of the double-layer are 300 nm and 200 nm respectively. X-Ray diffraction (XRD), scanning electron microscope (SEM) and UV–VIS–NIR photospectrometer and photoluminance tests were used to study the structure, morphology, optical absorption and band gaps of the stacked films. From XRD and SEM, we can confirm the microstructures of each layer. The UV–VIS–NIR spectrum revealed that the optical absorption of Ag{sub 2}O/TiO{sub 2} fell in between the single film of Ag{sub 2}O and TiO{sub 2}. Further, two band gaps were estimated for Ag{sub 2}O/TiO{sub 2} films based on the Beer-Lambert law and Tauc plot. Photoluminance and photoelectrochemical tests indicated that delayed emission by electron-hole recombination and photoelectrical current was effectively support the mechanism of electrons transfer from Ag{sub 2}O to TiO{sub 2} at Ag{sub 2}O/TiO{sub 2} interface in the double-layer films. - Highlights: • A double-layer of Ag{sub 2}O/TiO{sub 2} films was deposited on glass substrate by sputtering. • XRD confirms the nanocrystalline structures of the stack deposited films. • UV–VIS–NIR spectroscopy shows the enhanced of optical absorption in Ag{sub 2}O/TiO{sub 2}. • Photoluminance and photoelectrochemical tests show electron-hole separation effect.

  9. Sport stacking activities in school children's motor skill development.

    Science.gov (United States)

    Li, Yuhua; Coleman, Diane; Ransdell, Mary; Coleman, Lyndsie; Irwin, Carol

    2011-10-01

    This study examined the impact of a 12-wk. sport stacking intervention on reaction time (RT), manual dexterity, and hand-eye coordination in elementary school-aged children. 80 Grade 2 students participated in a 15-min. sport stacking practice session every school day for 12 wk., and were tested on psychomotor performance improvement. Tests for choice RT, manual dexterity, and photoelectric rotary pursuit tracking were conducted pre- and post-intervention for both experimental group (n = 36) and the controls (n = 44) who did no sport stacking. Students who had the intervention showed a greater improvement in two-choice RT. No other group difference was found. Such sport stacking activities may facilitate children's central processing and perceptual-motor integration.

  10. Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

    Science.gov (United States)

    Gao, L. G.; Xu, B.; Guo, H. X.; Xia, Y. D.; Yin, J.; Liu, Z. G.

    2009-06-01

    The band alignments of (La2O3)0.5(SiO2)0.5(LSO)/GaN and LSO/SiO2/GaN gate dielectric stacks were investigated comparatively by using x-ray photoelectron spectroscopy. The valence band offsets for LSO/GaN stack and LSO/SiO2/GaN stack are 0.88 and 1.69 eV, respectively, while the corresponding conduction band offsets are found to be 1.40 and 1.83 eV, respectively. Measurements of the leakage current density as function of temperature revealed that the LSO/SiO2/GaN stack has much lower leakage current density than that of the LSO/GaN stack, especially at high temperature. It is concluded that the presence of a SiO2 buffer layer increases band offsets and reduces the leakage current density effectively.

  11. Simultaneous stack-gas scrubbing and waste water treatment

    Science.gov (United States)

    Poradek, J. C.; Collins, D. D.

    1980-01-01

    Simultaneous treatment of wastewater and S02-laden stack gas make both treatments more efficient and economical. According to results of preliminary tests, solution generated by stack gas scrubbing cycle reduces bacterial content of wastewater. Both processess benefit by sharing concentrations of iron.

  12. Detailed Electrochemical Characterisation of Large SOFC Stacks

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Hjelm, Johan; Barfod, R.

    2012-01-01

    application of advanced methods for detailed electrochemical characterisation during operation. An operating stack is subject to steep compositional gradients in the gaseous reactant streams, and significant temperature gradients across each cell and across the stack, which makes it a complex system...... Fuel Cell A/S was characterised in detail using electrochemical impedance spectroscopy. An investigation of the optimal geometrical placement of the current probes and voltage probes was carried out in order to minimise measurement errors caused by stray impedances. Unwanted stray impedances...... are particularly problematic at high frequencies. Stray impedances may be caused by mutual inductance and stray capacitance in the geometrical set-up and do not describe the fuel cell. Three different stack geometries were investigated by electrochemical impedance spectroscopy. Impedance measurements were carried...

  13. The Stack-Size of Combinatorial Tries Revisited

    Directory of Open Access Journals (Sweden)

    Markus E. Nebel

    2002-12-01

    Full Text Available In the present paper we consider a generalized class of extended binary trees in which leaves are distinguished in order to represent the location of a key within a trie of the same structure. We prove an exact asymptotic equivalent to the average stack-size of trees with α internal nodes and β leaves corresponding to keys; we assume that all trees with the same parameters α and β have the same probability. The assumption of that uniform model is motivated for example by the usage of tries for the compression of blockcodes. Furthermore, we will prove asymptotics for the r-th moments of the stack-size and we will show that a normalized stack-size possesses a theta distribution in the limit.

  14. Crystallite size effects in stacking faulted nickel hydroxide and its electrochemical behaviour

    International Nuclear Information System (INIS)

    Ramesh, T.N.

    2009-01-01

    β-Nickel hydroxide comprises a long range periodic arrangement of atoms with a stacking sequence of AC AC AC-having an ideal composition Ni(OH) 2 . Variation in the preparative conditions can lead to the changes in the stacking sequence (AC AC BA CB AC AC or AC AC AB AC AC). This type of variation in stacking sequence can result in the formation of stacking fault in nickel hydroxide. The stability of the stacking fault depends on the free energy content of the sample. Stacking faults in nickel hydroxide is essential for better electrochemical activity. Also there are reports correlating particle size to the better electrochemical activity. Here we present the effect of crystallite size on the stacking faulted nickel hydroxide samples. The electrochemical performance of stacking faulted nickel hydroxide with small crystallite size exchanges 0.8e/Ni, while the samples with larger crystallite size exchange 0.4e/Ni. Hence a right combination of crystallite size and stacking fault content has to be controlled for good electrochemical activity of nickel hydroxide

  15. Alternating stacking of ferromagnetic nanosheet and nanoparticle films: heteroassembly and magneto-optical Kerr effect

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Baoping, E-mail: baoping.jia@cczu.edu.cn [Changzhou University, School of Materials Science and Engineering (China); Zhang, Wei, E-mail: wei.zhang@unisa.edu.au [University of Tokyo, Department of Urban Engineering (Japan); Liu, Hui [Central South University, School of Metallurgy and Environment, National Engineering Research Center for Control & Treatment of Heavy Metal Pollution (China); Lin, Bencai; Ding, Jianning [Changzhou University, School of Materials Science and Engineering (China)

    2016-09-15

    Heterostructured multilayer films of two different nanocrystals have been successfully fabricated by layer-by-layer stacking of Ti{sub 0.8}Co{sub 0.2}O{sub 2} nanosheet and Fe{sub 3}O{sub 4} nanoparticle films. UV–Vis spectroscopy and AFM observation confirmed the successful alternating deposition in the multilayer buildup process. The average thickness of both Ti{sub 0.8}Co{sub 0.2}O{sub 2} nanosheet and Fe{sub 3}O{sub 4} nanoparticle layers was determined to be about 1.4–1.7 and 5 nm, which was in good agreement with TEM results. Magneto-optical Kerr effect measurements demonstrated that the heteroassemblies exhibit gigantic magnetic circular dichroism (MCD) (2 × 10{sup 4} deg/cm) at 320–360 nm, deriving from strong interlayer [Co{sup 2+}]t{sub 2g}–[Fe{sup 3+}]e{sub g} d–d charge transfer which was further confirmed by X-ray photoelectron spectroscopy. Their structure-dependent MCD showed high potential in rational design and construction of high-efficiency magneto-optical devices.

  16. Layer-controllable graphene by plasma thinning and post-annealing

    Science.gov (United States)

    Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

    2018-05-01

    The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

  17. Solid Oxide Cell and Stack Testing, Safety and Quality Assurance (SOCTESQA)

    DEFF Research Database (Denmark)

    Auer, C.; Lang, M.; Couturier, K.

    2015-01-01

    In the EU-funded project “SOCTESQA” partners from Europe and Singapore are working together to develop uniform and industry wide test procedures and protocols for solid oxide cells and stacks SOC cell/stack assembly. New application fields which are based on the operation of the SOC cell/stack as......In the EU-funded project “SOCTESQA” partners from Europe and Singapore are working together to develop uniform and industry wide test procedures and protocols for solid oxide cells and stacks SOC cell/stack assembly. New application fields which are based on the operation of the SOC cell...

  18. Static analysis of worst-case stack cache behavior

    DEFF Research Database (Denmark)

    Jordan, Alexander; Brandner, Florian; Schoeberl, Martin

    2013-01-01

    Utilizing a stack cache in a real-time system can aid predictability by avoiding interference that heap memory traffic causes on the data cache. While loads and stores are guaranteed cache hits, explicit operations are responsible for managing the stack cache. The behavior of these operations can......-graph, the worst-case bounds can be efficiently yet precisely determined. Our evaluation using the MiBench benchmark suite shows that only 37% and 21% of potential stack cache operations actually store to and load from memory, respectively. Analysis times are modest, on average running between 0.46s and 1.30s per...

  19. Interactions between stacked layers of phenyl-modified silicene

    International Nuclear Information System (INIS)

    Spencer, Michelle J S; Snook, Ian K; Bassett, Michael R; Morishita, Tetsuya; Nakano, Hideyuki

    2013-01-01

    We use density functional theory (DFT) calculations to determine the interaction between phenyl-modified silicene nanosheets. The adhesion energy curves between the nanosheets are compared for different van der Waals density functional (vdW-DF) functionals and the DFT-D2 Grimme method. Our results show that there is a weak attraction between the sheets at close separations, that is stronger when vdWs forces are included. Without including vdWs forces the interaction is negligible and occurs at a much larger separation, highlighting the need to include such forces when modelling these nanosheets. Of the vdWs methods, the optB88 functional gives the strongest interaction energy while the Grimme gives the weakest, with the separation at which the nanosheets adhere more strongly varying between 10.04 and 11.24 Å, as measured by the distance between the silicene layers. As the modified nanosheets are brought closer together at separations as close at  ∼ 8 Å, the phenyl groups on the bottom of one nanosheet can fit in between the phenyl groups on the top of the adjacent nanosheet allowing some π − π interaction between the phenyl groups. We showed that the band gap can be modified by compressing the nanosheets together while retaining a small attraction between them. There is also a change from a direct to an indirect band gap. Such a property may be exploited for the application of these nanomaterials in optoelectronic devices. (paper)

  20. Charge transfer in pi-stacked systems including DNA

    International Nuclear Information System (INIS)

    Siebbeles, L.D.A.

    2003-01-01

    Charge migration in DNA is a subject of intense current study motivated by long-range detection of DNA damage and the potential application of DNA as a molecular wire in nanoscale electronic devices. A key structural element, which makes DNA a medium for long-range charge transfer, is the array of stacked base pairs in the interior of the double helix. The overlapping pi-orbitals of the nucleobases provide a pathway for motion of charge carriers generated on the stack. This 'pi-pathway' resembles the columnarly stacked macrocyclic cores in discotic materials such as triphenylenes. The structure of these pi-stacked systems is highly disordered with dynamic fluctuations occurring on picosecond to nanosecond time scales. Theoretical calculations, concerning the effects of structural disorder and nucleobase sequence in DNA, on the dynamics of charge carriers are presented. Electronic couplings and localization energies of charge carriers were calculated using density functional theory (DFT). Results for columnarly stacked triphenylenes and DNA nucleobases are compared. The results are used to provide insight into the factors that control the mobility of charge carriers. Further, experimental results on the site-selective oxidation of guanine nucleobases in DNA (hot spots for DNA damage) are analyzed on basis of the theoretical results

  1. Development of all chemical solution derived Ce0.9La0.1O2 − y/Gd2Zr2O7 buffer layer stack for coated conductors: influence of the post-annealing process on surface crystallinity

    DEFF Research Database (Denmark)

    Yue, Zhao; Li, Xiaofen; Khoryushin, Alexey

    2012-01-01

    Preparation and characterization of a biaxially textured Gd2Zr2O7 and Ce0.9La0.1O2 − y (CLO, cap)/Gd2Zr2O7 (GZO, barrier) buffer layer stack by the metal–organic deposition route are reported. YBa2Cu3O7 − d (YBCO) superconductor films were deposited by the pulsed-laser deposition (PLD) technique ...

  2. Field emission from vertically aligned few-layer graphene

    International Nuclear Information System (INIS)

    Malesevic, Alexander; Kemps, Raymond; Vanhulsel, Annick; Chowdhury, Manish Pal; Volodin, Alexander; Van Haesendonck, Chris

    2008-01-01

    The electric field emission behavior of vertically aligned few-layer graphene was studied in a parallel plate-type setup. Few-layer graphene was synthesized in the absence of any metallic catalyst by microwave plasma enhanced chemical vapor deposition with gas mixtures of methane and hydrogen. The deposit consists of nanostructures that are several micrometers wide, highly crystalline stacks of four to six atomic layers of graphene, aligned vertically to the substrate surface in a high density network. The few-layer graphene is found to be a good field emitter, characterized by turn-on fields as low as 1 V/μm and field amplification factors up to several thousands. We observe a clear dependence of the few-layer graphene field emission behavior on the synthesis parameters: Hydrogen is identified as an efficient etchant to improve field emission, and samples grown on titanium show lower turn-on field values and higher amplification factors when compared to samples grown on silicon

  3. Reliability analysis and initial requirements for FC systems and stacks

    Science.gov (United States)

    Åström, K.; Fontell, E.; Virtanen, S.

    In the year 2000 Wärtsilä Corporation started an R&D program to develop SOFC systems for CHP applications. The program aims to bring to the market highly efficient, clean and cost competitive fuel cell systems with rated power output in the range of 50-250 kW for distributed generation and marine applications. In the program Wärtsilä focuses on system integration and development. System reliability and availability are key issues determining the competitiveness of the SOFC technology. In Wärtsilä, methods have been implemented for analysing the system in respect to reliability and safety as well as for defining reliability requirements for system components. A fault tree representation is used as the basis for reliability prediction analysis. A dynamic simulation technique has been developed to allow for non-static properties in the fault tree logic modelling. Special emphasis has been placed on reliability analysis of the fuel cell stacks in the system. A method for assessing reliability and critical failure predictability requirements for fuel cell stacks in a system consisting of several stacks has been developed. The method is based on a qualitative model of the stack configuration where each stack can be in a functional, partially failed or critically failed state, each of the states having different failure rates and effects on the system behaviour. The main purpose of the method is to understand the effect of stack reliability, critical failure predictability and operating strategy on the system reliability and availability. An example configuration, consisting of 5 × 5 stacks (series of 5 sets of 5 parallel stacks) is analysed in respect to stack reliability requirements as a function of predictability of critical failures and Weibull shape factor of failure rate distributions.

  4. Purex Plant comparison with 40 CFR 61, subpart H, and other referenced guidelines for the Product Removal (PR) (296-A-1) stack

    International Nuclear Information System (INIS)

    Lohrasbi, J.

    1994-08-01

    Dose calculations for atmospheric radionuclide releases from the Hanford Site for calendar year (CY) 1992 were performed by Pacific Northwest Laboratory (PNL) using the approved US Environmental Protection Agency (EPA) CAP-88 computer model. Emissions from discharge points in the Hanford Site 100, 200, 300, 400, and 600 areas were calculated based on results of analyses of continuous and periodic sampling conducted at the discharge points. These calculated emissions were provided for inclusion in the CAP-88 model by area and by individual facility for those facilities having the potential to contribute more than 10 percent of the Hanford Site total or to result in an impact of greater than 0.1 mrem per year to the maximally exposed individual (MEI). Also included in the assessment of offsite dose modeling are the measured radioactive emissions from all Hanford Site stacks that have routine monitoring performed. Record sampling systems have been installed on all stacks and vents that use exhaust fans to discharge air that potentially may carry airborne radioactivity. Estimation of activity from ingrowth of long-lived radioactive progeny is not included in the CAP-88 model; therefore, the Hanford Site GENII code (Napier et al. 1988) was used to supplement the CAP-88 dose calculations. When the dose to the MEI located in the Ringold area was calculated, the effective dose equivalent (EDE) from combined Hanford Site radioactive airborne emissions was shown to be 3.7E-03 mrem. This value was reported in the annual air emission report prepared for the Hanford Site (RL 1993)

  5. Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming

    Energy Technology Data Exchange (ETDEWEB)

    Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2009-11-15

    To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

  6. PRECISION COSMOGRAPHY WITH STACKED VOIDS

    International Nuclear Information System (INIS)

    Lavaux, Guilhem; Wandelt, Benjamin D.

    2012-01-01

    We present a purely geometrical method for probing the expansion history of the universe from the observation of the shape of stacked voids in spectroscopic redshift surveys. Our method is an Alcock-Paczyński (AP) test based on the average sphericity of voids posited on the local isotropy of the universe. It works by comparing the temporal extent of cosmic voids along the line of sight with their angular, spatial extent. We describe the algorithm that we use to detect and stack voids in redshift shells on the light cone and test it on mock light cones produced from N-body simulations. We establish a robust statistical model for estimating the average stretching of voids in redshift space and quantify the contamination by peculiar velocities. Finally, assuming that the void statistics that we derive from N-body simulations is preserved when considering galaxy surveys, we assess the capability of this approach to constrain dark energy parameters. We report this assessment in terms of the figure of merit (FoM) of the dark energy task force and in particular of the proposed Euclid mission which is particularly suited for this technique since it is a spectroscopic survey. The FoM due to stacked voids from the Euclid wide survey may double that of all other dark energy probes derived from Euclid data alone (combined with Planck priors). In particular, voids seem to outperform baryon acoustic oscillations by an order of magnitude. This result is consistent with simple estimates based on mode counting. The AP test based on stacked voids may be a significant addition to the portfolio of major dark energy probes and its potentialities must be studied in detail.

  7. Effect of flow parameters on flare stack generator noise

    International Nuclear Information System (INIS)

    Dinn, T.S.

    1998-01-01

    The SoundPLAN Computer Noise Model was used to determine the general effect of flare noise in a community adjacent to a petrochemical plant. Tests were conducted to determine the effect of process flow conditions and the pulsating flame on the flare stack generator noise from both a refinery flare and process flare. Flaring under normal plant operations, the flaring of fuel gas and the flaring of hydrogen were the three conditions that were tested. It was shown that the steam flow rate was the determining factor in the flare stack generated noise. Variations in the water seal level in the flare line surge tank increased or decreased the gas flowrate, which resulted in a pulsating flame. The period and amplitude of the pulsating noise from the flare stacks was determined by measuring several parameters. Flare stack noise oscillations were found to be greater for the process flare than for the refinery flare stack. It was suggested that minimizing the amount of steam fed to the flare and improving the burner design would minimize noise. 2 tabs., 6 figs

  8. Stack Parameters Effect on the Performance of Anharmonic Resonator Thermoacoustic Heat Engine

    KAUST Repository

    Nouh, Mostafa A.

    2014-01-01

    A thermoacoustic heat engine (TAHE) converts heat into acoustic power with no moving parts. It exhibits several advantages over traditional engines, such as simple design, stable functionality, and environment-friendly working gas. In order to further improve the performance of TAHE, stack parameters need to be optimized. Stack\\'s position, length and plate spacing are the three main parameters that have been investigated in this study. Stack\\'s position dictates both the efficiency and the maximum produced acoustic power of the heat engine. Positioning the stack closer to the pressure anti-node might ensure high efficiency on the expense of the maximum produced acoustic power. It is noticed that the TAHE efficiency can further be improved by spacing the plates of the stack at a value of 2.4 of the thermal penetration depth, δk . Changes in the stack length will not affect the efficiency much as long as the temperature gradient across the stack, as a ratio of the critical temperature gradient ψ is more than 1. Upon interpreting the effect of these variations, attempts are made towards reaching the engine\\'s most powerful operating point.

  9. Progress of MCFC stack technology at Toshiba

    Energy Technology Data Exchange (ETDEWEB)

    Hori, M.; Hayashi, T.; Shimizu, Y. [Toshiba Corp., Tokyo (Japan)

    1996-12-31

    Toshiba is working on the development of MCFC stack technology; improvement of cell characteristics, and establishment of separator technology. For the cell technology, Toshiba has concentrated on both the restraints of NiO cathode dissolution and electrolyte loss from cells, which are the critical issues to extend cell life in MCFC, and great progress has been made. On the other hand, recognizing that the separator is one of key elements in accomplishing reliable and cost-competitive MCFC stacks, Toshiba has been accelerating the technology establishment and verification of an advanced type separator. A sub-scale stack with such a separator was provided for an electric generating test, and has been operated for more than 10,000 hours. This paper presents several topics obtained through the technical activities in the MCFC field at Toshiba.

  10. Calculation of tritium release from reactor's stack

    International Nuclear Information System (INIS)

    Akhadi, M.

    1996-01-01

    Method for calculation of tritium release from nuclear to environment has been discussed. Part of gas effluent contain tritium in form of HTO vapor released from reactor's stack was sampled using silica-gel. The silica-gel was put in the water to withdraw HTO vapor absorbed by silica-gel. Tritium concentration in the water was measured by liquid scintillation counter of Aloka LSC-703. Tritium concentration in the gas effluent and total release of tritium from reactor's stack during certain interval time were calculated using simple mathematic formula. This method has examined for calculation of tritium release from JRR-3M's stack of JAERI, Japan. From the calculation it was obtained the value of tritium release as much as 4.63 x 10 11 Bq during one month. (author)

  11. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    Directory of Open Access Journals (Sweden)

    H. Hussin

    2014-01-01

    Full Text Available We present a simulation study on negative bias temperature instability (NBTI induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2 and hafnium oxide (HfO2 layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated.

  12. Effect of low dose electron beam irradiation on the alteration layer formed during nuclear glass leaching

    Energy Technology Data Exchange (ETDEWEB)

    Mougnaud, S., E-mail: sarah.mougnaud@gmail.com [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Tribet, M. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Renault, J.-P. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jollivet, P. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Panczer, G. [Institut Lumière Matière, UMR 5306, Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne cedex (France); Charpentier, T. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jégou, C. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France)

    2016-12-15

    This investigation concerns borosilicate glass leaching mechanisms and the evolution of alteration layer under electron beam irradiation. A simple glass doped with rare earth elements was selected in order to access mechanistic and structural information and better evaluate the effects of irradiation. It was fully leached in initially pure water at 90 °C and at high glass surface area to solution volume ratio (S/V = 20 000 m{sup −1}) in static conditions. Under these conditions, the system quickly reaches the residual alteration rate regime. A small particle size fraction (2–5 μm) was sampled in order to obtain a fairly homogeneous altered material enabling the use of bulk characterization methods. External irradiations with 10 MeV electrons up to a dose of 10 MGy were performed either before or after leaching, to investigate respectively the effect of initial glass irradiation on its alteration behavior and the irradiation stability of the alteration layer. Glass dissolution rate was analyzed by regular leachate samplings and the alteration layer structure was characterized by Raman, luminescence (continuous or time-resolved), and {sup 29}Si MAS NMR and EPR spectroscopy. It was shown that the small initial glass evolutions under irradiation did not induce any modification of the leaching kinetic nor of the structure of the alteration layer. The alteration process seemed to “smooth over” the created defects. Otherwise, the alteration layer and initial glass appeared to have different behaviors under irradiation. No Eu{sup 3+} reduction was detected in the alteration layer after irradiation and the defect creation efficiency was much lower than for initial glass. This can possibly be explained by the protective role of pore water contained in the altered material (∼20%). Moreover, a slight depolymerization of the silicon network of the altered glass under irradiation with electrons was evidenced, whereas in the initial glass it typically

  13. Nonlinearly stacked low noise turbofan stator

    Science.gov (United States)

    Schuster, William B. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor)

    2009-01-01

    A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

  14. Study of tapping process of carbon fiber reinforced plastic composites/AA7075 stacks

    Science.gov (United States)

    D'Orazio, Alessio; Mehtedi, Mohamad El; Forcellese, Archimede; Nardinocchi, Alessia; Simoncini, Michela

    2018-05-01

    The present investigation aims at studying the tapping process of a three-layer stack constituted by two CFRP layers and a core plate in AA7075 aluminum alloy. The CFRP laminates were obtained by a pre-impregnated woven sample made up of T700 carbon fibers and a thermoset epoxy matrix. Tapping experiments were performed on a 5-axis machining center instrumented with a dynamometer to measure thrust force generated during process. A high-speed steel tool, coated with nanocomposite TiAlN, was used. According to the tool manufacturer recommendations, rotational speed and feed rate were 800 rpm and 1000 mm/min, respectively. Similar thrust force time history responses were obtained by tapping different holes, even though the vertical force increases with number of threaded holes. Furthermore, a quantitative evaluation of delamination at the periphery of entry holes was carried out. The delamination at the entry hole strongly increases with number of threaded holes.

  15. High-Stacking-Density, Superior-Roughness LDH Bridged with Vertically Aligned Graphene for High-Performance Asymmetric Supercapacitors.

    Science.gov (United States)

    Guo, Wei; Yu, Chang; Li, Shaofeng; Yang, Juan; Liu, Zhibin; Zhao, Changtai; Huang, Huawei; Zhang, Mengdi; Han, Xiaotong; Niu, Yingying; Qiu, Jieshan

    2017-10-01

    The high-performance electrode materials with tuned surface and interface structure and functionalities are highly demanded for advanced supercapacitors. A novel strategy is presented to conFigure high-stacking-density, superior-roughness nickel manganese layered double hydroxide (LDH) bridged by vertically aligned graphene (VG) with nickel foam (NF) as the conductive collector, yielding the LDH-NF@VG hybrids for asymmetric supercapacitors. The VG nanosheets provide numerous electron transfer channels for quick redox reactions, and well-developed open structure for fast mass transport. Moreover, the high-stacking-density LDH grown and assembled on VG nanosheets result in a superior hydrophilicity derived from the tuned nano/microstructures, especially microroughness. Such a high stacking density with abundant active sites and superior wettability can be easily accessed by aqueous electrolytes. Benefitting from the above features, the LDH-NF@VG can deliver a high capacitance of 2920 F g -1 at a current density of 2 A g -1 , and the asymmetric supercapacitor with the LDH-NF@VG as positive electrode and activated carbon as negative electrode can deliver a high energy density of 56.8 Wh kg -1 at a power density of 260 W kg -1 , with a high specific capacitance retention rate of 87% even after 10 000 cycles. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xie, Wenkun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-11-15

    increase in the initial stage and fluctuates at their equilibrium position at stable cutting stage, which is because of the energy accumulation and release leading to the dislocation emission. A typically stacking fault tetrahedra is nucleated in the subsurface defect layer, which is induced by the complex tension and compression stress. The stress-induced mechanism of stacking fault tetrahedra formation is investigated by atomic scale evolution and local stress distribution.

  17. Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

    International Nuclear Information System (INIS)

    Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Guo, Yongbo; Xie, Wenkun

    2015-01-01

    increase in the initial stage and fluctuates at their equilibrium position at stable cutting stage, which is because of the energy accumulation and release leading to the dislocation emission. A typically stacking fault tetrahedra is nucleated in the subsurface defect layer, which is induced by the complex tension and compression stress. The stress-induced mechanism of stacking fault tetrahedra formation is investigated by atomic scale evolution and local stress distribution.

  18. MOS-Based Multiuser Multiapplication Cross-Layer Optimization for Mobile Multimedia Communication

    Directory of Open Access Journals (Sweden)

    Shoaib Khan

    2007-01-01

    Full Text Available We propose a cross-layer optimization strategy that jointly optimizes the application layer, the data-link layer, and the physical layer of a wireless protocol stack using an application-oriented objective function. The cross-layer optimization framework provides efficient allocation of wireless network resources across multiple types of applications run by different users to maximize network resource usage and user perceived quality of service. We define a novel optimization scheme based on the mean opinion score (MOS as the unifying metric over different application classes. Our experiments, applied to scenarios where users simultaneously run three types of applications, namely voice communication, streaming video and file download, confirm that MOS-based optimization leads to significant improvement in terms of user perceived quality when compared to conventional throughput-based optimization.

  19. Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

    International Nuclear Information System (INIS)

    Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

    2017-01-01

    Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

  20. Analysis of preemption costs for the stack cache

    DEFF Research Database (Denmark)

    Naji, Amine; Abbaspour, Sahar; Brandner, Florian

    2018-01-01

    , the analysis of the stack cache was limited to individual tasks, ignoring aspects related to multitasking. A major drawback of the original stack cache design is that, due to its simplicity, it cannot hold the data of multiple tasks at the same time. Consequently, the entire cache content needs to be saved...