Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

Effect of low dose rate irradiation on doped silica core optical fibers

International Nuclear Information System (INIS)

Friebele, E.J.; Askins, C.G.; Gingerich, M.E.

1984-01-01

The optical attenuation induced in multimode doped silica core optical fiber waveguides by a year's exposure to low dose rate (1 rad/day) ionizing radiation was studied, allowing a characterization of fibers deployed in these environments and a determination of the permanent induced loss in the waveguides. Variations in the induced attenuation at 0.85 μm have been observed with changes in the dose rate between 1 rad/day and 9000 rads/min. These dose rate dependences have been found to derive directly from the recovery that occurs during the exposure; the recovery data predict little or no dose rate dependence of the damage at 1.3 μm. The low dose rate exposure has been found to induce significant permanent attenuation in the 0.7-1.7-μm spectral region in all fibers containing P in the core, whether doped uniformly across the diameter or constrained to a narrow spike on the centerline. Whereas permanent loss was induced at 0.85 μm in a P-free binary Ge-doped silica core fiber by the year's exposure, virtually no damage was observed at 1.3 μm

Planar waveguide amplifiers and laser in erbium doped silica

DEFF Research Database (Denmark)

Guldberg-Kjær, Søren Andreas; Kristensen, Martin

1999-01-01

with UV-light and that permanent Bragg-gratings can be induced. Planar waveguide lasers with integrated Bragg-gratings are manufactured and characterised. It is shown that linewidths below 125 kHz and output powers around 0.5 mW can be obtained, and that the manufactured lasers are resistant to mechanical...... lightwave circuits, as well as provide the gain medium for integrated planar waveguide lasers. The work and the obtained results are presented in this thesis: The manufacturing of silica thin films is described and it is shown that the refractive index o fthe films can be controlled by germanium co...... as well as thermal influence. A simple method for producing an array of planar waveguide lasers is presented and it is shown that the difference in output wavelength of the individual lasers can be controlled with great accuracy....

Observation of an optical event horizon in a silicon-on-insulator photonic wire waveguide.

Science.gov (United States)

Ciret, Charles; Leo, François; Kuyken, Bart; Roelkens, Gunther; Gorza, Simon-Pierre

2016-01-11

We report on the first experimental observation of an optical analogue of an event horizon in integrated nanophotonic waveguides, through the reflection of a continuous wave on an intense pulse. The experiment is performed in a dispersion-engineered silicon-on-insulator waveguide. In this medium, solitons do not suffer from Raman induced self-frequency shift as in silica fibers, a feature that is interesting for potential applications of optical event horizons. As shown by simulations, this also allows the observation of multiple reflections at the same time on fundamental solitons ejected by soliton fission.

Progress on erbium-doped waveguide components

DEFF Research Database (Denmark)

Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes

1997-01-01

The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...

Degradability and Clearance of Silicon, Organosilica, Silsesquioxane, Silica Mixed Oxide, and Mesoporous Silica Nanoparticles

KAUST Repository

Croissant, Jonas G.

2017-01-13

The biorelated degradability and clearance of siliceous nanomaterials have been questioned worldwide, since they are crucial prerequisites for the successful translation in clinics. Typically, the degradability and biocompatibility of mesoporous silica nanoparticles (MSNs) have been an ongoing discussion in research circles. The reason for such a concern is that approved pharmaceutical products must not accumulate in the human body, to prevent severe and unpredictable side-effects. Here, the biorelated degradability and clearance of silicon and silica nanoparticles (NPs) are comprehensively summarized. The influence of the size, morphology, surface area, pore size, and surface functional groups, to name a few, on the degradability of silicon and silica NPs is described. The noncovalent organic doping of silica and the covalent incorporation of either hydrolytically stable or redox- and enzymatically cleavable silsesquioxanes is then described for organosilica, bridged silsesquioxane (BS), and periodic mesoporous organosilica (PMO) NPs. Inorganically doped silica particles such as calcium-, iron-, manganese-, and zirconium-doped NPs, also have radically different hydrolytic stabilities. To conclude, the degradability and clearance timelines of various siliceous nanomaterials are compared and it is highlighted that researchers can select a specific nanomaterial in this large family according to the targeted applications and the required clearance kinetics.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

Science.gov (United States)

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Silicon nanocrystals in silica – Novel active waveguides for nanophotonics

Czech Academy of Sciences Publication Activity Database

Janda, P.; Valenta, J.; Ostatnický, T.; Skopalová, Eva; Pelant, Ivan; Elliman, R. G.; Tomasiunas, R.

2006-01-01

Roč. 121, - (2006), s. 267-273 ISSN 0022-2313 R&D Projects: GA AV ČR IAA1010316; GA ČR GP202/01/D030 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystal * waveguide * silicon * photonics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.441, year: 2006

Plasmonic properties and enhanced fluorescence of gold and dye-doped silica nanoparticle aggregates

Science.gov (United States)

Green, Nathaniel Scott

The development of metal-enhanced fluorescence has prompted a great interest in augmenting the photophysical properties of fluorescent molecules with noble metal nanostructures. Our research efforts, outlined in this dissertation, focus on augmenting properties of fluorophores by conjugation with gold nanostructures. The project goals are split into two separate efforts; the enhancement in brightness of fluorophores and long distance non-radiative energy transfer between fluorophores. We believe that interacting dye-doped silica nanoparticles with gold nanoparticles can facilitate both of these phenomena. Our primary research interest is focused on optimizing brightness, as this goal should open a path to studying the second goal of non-radiative energy transfer. The two major challenges to this are constructing suitable nanomaterials and functionalizing them to promote plasmonically active complexes. The synthesis of dye-doped layered silica nanoparticles allows for control over the discrete location of the dye and a substrate that can be surface functionalized. Controlling the exact location of the dye is important to create a silica spacer, which promotes productive interactions with metal nanostructures. Furthermore, the synthesis of silica nanoparticles allows for various fluorophores to be studied in similar environments (removing solvent and other chemo-sensitive issues). Functionalizing the surface of silica nanoparticles allows control over the degree of silica and gold nanoparticle aggregation in solution. Heteroaggregation in solution is useful for producing well-aggregated clusters of many gold around a single silica nanoparticle. The dye-doped surface functionalized silica nanoparticles can than be mixed efficiently with gold nanomaterials. Aggregating multiple gold nanospheres around a single dye-doped silica nanoparticle can dramatically increase the fluorescent brightness of the sample via metal-enhanced fluorescence due to increase plasmonic

Gold nanostructure-integrated silica-on-silicon waveguide for the detection of antibiotics in milk and milk products

Science.gov (United States)

Ozhikandathil, Jayan; Badilescu, Simona; Packirisamy, Muthukumaran

2012-10-01

Antibiotics are extensively used in veterinary medicine for the treatment of infectious diseases. The use of antibiotics for the treatment of animals used for food production raised the concern of the public and a rapid screening method became necessary. A novel approach of detection of antibiotics in milk is reported in this work by using an immunoassay format and the Localized Surface Plasmon Resonance property of gold. An antibiotic from the penicillin family that is, ampicillin is used for testing. Gold nanostructures deposited on a glass substrate by a novel convective assembly method were heat-treated to form a nanoisland morphology. The Au nanostructures were functionalized and the corresponding antibody was absorbed from a solution. Solutions with known concentrations of antigen (antibiotics) were subsequently added and the spectral changes were monitored step by step. The Au LSPR band corresponding to the nano-island structure was found to be suitable for the detection of the antibody antigen interaction. The detection of the ampicillin was successfully demonstrated with the gold nano-islands deposited on glass substrate. This process was subsequently adapted for the integration of gold nanostructures on the silica-on-silicon waveguide for the purpose of detecting antibiotics.

Synthesis and characterization of silicon-doped polycrystalline GaN ...

Indian Academy of Sciences (India)

Silicon-doped polycrystalline GaN films were successfully deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 Pa. The films were characterized by optical as well as microstructural measurements. The optical ...

Rare-earth-ion-doped ultra-narrow-linewidth lasers on a silicon chip and applications to intra-laser-cavity optical sensing

NARCIS (Netherlands)

Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus

We report on diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Er-doped and Yb-doped Al2O3 on standard thermally oxidized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into

Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Liu, Liu; Ou, Haiyan

2010-01-01

An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering...... the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler...... for transverse-magnetic and transverse-electric modes are ~0.36 dB and ~0.66 dB per connection, respectively....

Second-harmonic scanning optical microscopy of poled silica waveguides

DEFF Research Database (Denmark)

Pedersen, Kjeld; Bozhevolnyi, Sergey I.; Arentoft, Jesper

2000-01-01

Second-harmonic scanning optical microscopy (SHSOM) is performed on electric-field poled silica-based waveguides. Two operation modes of SHSOM are considered. Oblique transmission reflection and normal reflection modes are used to image the spatial distribution of nonlinear susceptibilities...... and limitations of the two operation modes when used for SHSOM studies of poled silica-based waveguides are discussed. The influence of surface defects on the resulting second-harmonic images is also considered. ©2000 American Institute of Physics....

Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 µm

Science.gov (United States)

Yan, Y. C.; Faber, A. J.; de Waal, H.; Kik, P. G.; Polman, A.

1997-11-01

Erbium-doped multicomponent phosphate glass waveguides were deposited by rf sputtering techniques. The Er concentration was 5.3×1020cm-3. By pumping the waveguide at 980 nm with a power of ˜21 mW, a net optical gain of 4.1 dB at 1.535 μm was achieved. This high gain per unit length at low pump power could be achieved because the Er-Er cooperative upconversion interactions in this heavily Er-doped phosphate glass are very weak [the upconversion coefficient is (2.0±0.5)×10-18 cm3/s], presumably due to the homogeneous distribution of Er in the glass and due to the high optical mode confinement in the waveguide which leads to high pump power density at low pump power.

Femtosecond laser written waveguides deep inside silicon.

Science.gov (United States)

Pavlov, I; Tokel, O; Pavlova, S; Kadan, V; Makey, G; Turnali, A; Yavuz, Ö; Ilday, F Ö

2017-08-01

Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 μm. To this end, we use 350 fs long, 2 μJ pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 μm in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 μm. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6×10 -4 , and by direct light coupling and far-field imaging, yielding a value of 3.5×10 -4 . The formation mechanism of the modification is discussed.

Supercontinuum generation in silicon waveguides relying on wave-breaking.

Science.gov (United States)

Castelló-Lurbe, David; Silvestre, Enrique

2015-10-05

Four-wave-mixing processes enabled during optical wave-breaking (OWB) are exploited in this paper for supercontinuum generation. Unlike conventional approaches based on OWB, phase-matching is achieved here for these nonlinear interactions, and, consequently, new frequency production becomes more efficient. We take advantage of this kind of pulse propagation to obtain numerically a coherent octave-spanning mid-infrared supercontinuum generation in a silicon waveguide pumping at telecom wavelengths in the normal dispersion regime. This scheme shows a feasible path to overcome limits imposed by two-photon absorption on spectral broadening in silicon waveguides.

Silicon Photonic Waveguides for Near- and Mid-Infrared Regions

Science.gov (United States)

Stankovic, S.; Milosevic, M.; Timotijevic, B.; Yang, P. Y.; Teo, E. J.; Crnjanski, J.; Matavulj, P.; Mashanovich, G. Z.

2007-11-01

The basic building block of every photonic circuit is a waveguide. In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator rib waveguide. We also analyse two structures that can find applications in mid- and long-wave infrared regions: free-standing and hollow core omnidirectional waveguides.

All silicon waveguide spherical microcavity coupler device.

Science.gov (United States)

Xifré-Pérez, E; Domenech, J D; Fenollosa, R; Muñoz, P; Capmany, J; Meseguer, F

2011-02-14

A coupler based on silicon spherical microcavities coupled to silicon waveguides for telecom wavelengths is presented. The light scattered by the microcavity is detected and analyzed as a function of the wavelength. The transmittance signal through the waveguide is strongly attenuated (up to 25 dB) at wavelengths corresponding to the Mie resonances of the microcavity. The coupling between the microcavity and the waveguide is experimentally demonstrated and theoretically modeled with the help of FDTD calculations.

Rectangular-cladding silicon slot waveguide with improved nonlinear performance

Science.gov (United States)

Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

2018-04-01

Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

Sm 3+-doped polymer optical waveguide amplifiers

Science.gov (United States)

Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

2010-04-01

Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

International Nuclear Information System (INIS)

Li Kai-Li; An Jun-Ming; Zhang Jia-Shun; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin Xiao-Jie; Hu Xiong-Wei

2016-01-01

The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. (paper)

ARROW-based silicon-on-insulator photonic crystal waveguides with reduced losses

DEFF Research Database (Denmark)

Lavrinenko, Andrei; Novitsky, A.; Zhilko, V.V.

2006-01-01

We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits.......We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits....

A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Trwoga, P.F.

1998-01-01

Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

Polymer/silica hybrid waveguide temperature sensor based on asymmetric Mach-Zehnder interferometer

Science.gov (United States)

Niu, Donghai; Wang, Xibin; Sun, Shiqi; Jiang, Minghui; Xu, Qiang; Wang, Fei; Wu, Yuanda; Zhang, Daming

2018-04-01

A highly sensitive waveguide temperature sensor based on asymmetric Mach-Zehnder interferometer was designed and experimentally demonstrated. The interferometer is based on the polymer/silica hybrid waveguide structure, and Norland Optical Adhesive 73 (NOA 73) was employed as the waveguide core to enhance the temperature sensitivity. The influence of the different length differences between the two interferometer arms on the sensitivity of the sensor was systemically studied. It is shown that the maximum temperature sensitivity of -431 pm °C-1 can be obtained in the range of 25 °C-75 °C, while the length difference is 92 μm. Moreover, the temperature sensitivity contributions from different core materials were also investigated experimentally. It is shown that the waveguide material and microstructure of the device have significant influences on the sensitivity of the waveguide temperature sensor.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

Science.gov (United States)

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Poling of Planar Silica Waveguides

DEFF Research Database (Denmark)

Arentoft, Jesper; Kristensen, Martin; Jensen, Jesper Bo

1999-01-01

UV-written planar silica waveguides are poled using two different poling techniques, thermal poling and UV-poling. Thermal poling induces an electro-optic coefficient of 0.067 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. The induced electro-optic effect shows a linear dependence...

Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon

Science.gov (United States)

Yan, Yingchao; Faber, Anne J.; de Waal, Henk

1996-01-01

RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

Deep glass etched microring resonators based on silica-on-silicon technology

DEFF Research Database (Denmark)

Ou, Haiyan; Rottwitt, Karsten; Philipp, Hugh Taylor

2006-01-01

Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented.......Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented....

Low loss hollow-core waveguide on a silicon substrate

Science.gov (United States)

Yang, Weijian; Ferrara, James; Grutter, Karen; Yeh, Anthony; Chase, Chris; Yue, Yang; Willner, Alan E.; Wu, Ming C.; Chang-Hasnain, Connie J.

2012-07-01

Optical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

Planar waveguide nanolaser configured by dye-doped hybrid nanofilm on substrate

Science.gov (United States)

Tikhonov, E. A.; Yashchuk, V. P.; Telbiz, G. M.

2018-04-01

Dye-doped hybrid silicate/titanium nanofilms on the glass substrate structures of asymmetrical waveguides were studied by way of laser systems. The threshold, spatial and spectral features of the laser oscillation of genuine and hollow waveguides were determined. The pattern of stimulated radiation included two concurrent processes: single-mode waveguide lasing and lateral small divergence emission. Comparison of the open angle of the lateral beams and grazing angles of the waveguide lasing mode provides an insight into the effect of leaky mode emission followed by Lummer-Gehrcke interference.

Four-Wave Mixing in Silicon-Rich Nitride Waveguides

DEFF Research Database (Denmark)

Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

2015-01-01

We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

Waveguide-loaded silica fibers for coupling to high-index micro-resonators

Science.gov (United States)

Latawiec, P.; Burek, M. J.; Venkataraman, V.; Lončar, M.

2016-01-01

Tapered silica fibers are often used to rapidly probe the optical properties of micro-resonators. However, their low refractive index precludes phase-matching when coupling to high-index micro-resonators, reducing efficiency. Here, we demonstrate efficient optical coupling from tapered fibers to high-index micro-resonators by loading the fibers with an ancillary adiabatic waveguide-coupler fabricated via angled-etching. We demonstrate greatly enhanced coupling to a silicon multimode micro-resonator when compared to coupling via the bare fiber only. Signatures of resonator optical bistability are observed at high powers. This scheme can be applied to resonators of any size and material, increasing the functional scope of fiber coupling.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

Science.gov (United States)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A; Olsson, Roy H; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic-phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized-with over 1,000 times larger nonlinearity than reported in previous systems-yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A.; Olsson, Roy H.; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip. PMID:23739586

Narrow-linewidth lasers on a silicon chip

NARCIS (Netherlands)

Bernhardi, Edward; Pollnau, Markus; Di Bartolo, Baldassare; Collins, John; Silvestri, Luciano

2015-01-01

Diode-pumped distributed-feedback (DFB) channel waveguide lasers were demonstrated in Er3+-doped and Yb3+-doped Al2O3 on standard thermally ox-idized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The

Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

International Nuclear Information System (INIS)

Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

2016-01-01

Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

Ultra-low loss nano-taper coupler for Silicon-on-Insulator ridge waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Liu, Liu; Ou, Haiyan

2010-01-01

A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.......A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler....

Coherent ultra-violet to near-infrared generation in silica ridge waveguides.

Science.gov (United States)

Yoon Oh, Dong; Yang, Ki Youl; Fredrick, Connor; Ycas, Gabriel; Diddams, Scott A; Vahala, Kerry J

2017-01-09

Short duration, intense pulses of light can experience dramatic spectral broadening when propagating through lengths of optical fibre. This continuum generation process is caused by a combination of nonlinear optical effects including the formation of dispersive waves. Optical analogues of Cherenkov radiation, these waves allow a pulse to radiate power into a distant spectral region. In this work, efficient and coherent dispersive wave generation of visible to ultraviolet light is demonstrated in silica waveguides on a silicon chip. Unlike fibre broadeners, the arrays provide a wide range of emission wavelength choices on a single, compact chip. This new capability is used to simplify offset frequency measurements of a mode-locked frequency comb. The arrays can also enable mode-locked lasers to attain unprecedented tunable spectral reach for spectroscopy, bioimaging, tomography and metrology.

NIR luminescent Er{sup 3+}/Yb{sup 3+} co-doped SiO{sub 2}-ZrO{sub 2} nanostructured planar and channel waveguides: Optical and structural properties

Energy Technology Data Exchange (ETDEWEB)

Cunha, Cesar dos Santos [Departamento de Quimica, Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901, Ribeirao Preto/SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Quimica de Materiais - (GPQM), Departamento de Ciencias Naturais, Universidade Federal de Sao Joao Del Rei, Campus Dom Bosco, Praca Dom Helvecio, 74, 36301-160, Sao Joao Del Rei, MG (Brazil); Oliveira, Drielly Cristina de [Departamento de Quimica, Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901, Ribeirao Preto/SP (Brazil); Maia, Lauro June Queiroz [Grupo Fisica de Materiais, Instituto de Fisica, UFG, Campus Samambaia, Caixa Postal 131, 74001-970, Goiania/GO (Brazil); Gomes, Anderson Stevens Leonidas [Departamento de Fisica, Universidade Federal de Pernambuco, Cidade Universitaria, Recife/PE, 50670-901 (Brazil); Ribeiro, Sidney Jose Lima [Laboratorio de Materiais Fotonicos, Instituto de Quimica, UNESP, Caixa Postal 355, 14801-970, Araraquara/SP (Brazil); and others

2012-09-14

Optical and structural properties of planar and channel waveguides based on sol-gel Er{sup 3+} and Yb{sup 3+} co-doped SiO{sub 2}-ZrO{sub 2} are reported. Microstructured channels with high homogeneous surface profile were written onto the surface of multilayered densified films deposited on SiO{sub 2}/Si substrates by a femtosecond laser etching technique. The densification of the planar waveguides was evaluated from changes in the refractive index and thickness, with full densification being achieved at 900 Degree-Sign C after annealing from 23 up to 500 min, depending on the ZrO{sub 2} content. Crystal nucleation and growth took place together with densification, thereby producing transparent glass ceramic planar waveguides containing rare earth-doped ZrO{sub 2} nanocrystals dispersed in a silica-based glassy host. Low roughness and crack-free surface as well as high confinement coefficient were achieved for all the compositions. Enhanced NIR luminescence of the Er{sup 3+} ions was observed for the Yb{sup 3+}-codoped planar waveguides, denoting an efficient energy transfer from the Yb{sup 3+} to the Er{sup 3+} ion. Highlights: Black-Right-Pointing-Pointer Sol-gel high NIR luminescent nanostructured planar and channel waveguides. Black-Right-Pointing-Pointer Microstructured channels written by a femtosecond laser etching technique. Black-Right-Pointing-Pointer Transparent glass ceramic with rare earth-doped ZrO{sub 2} nanocrystals in a silica host. Black-Right-Pointing-Pointer Enhanced NIR luminescence, efficient energy transfer from the Yb{sup 3+} to the Er{sup 3+} ion. Black-Right-Pointing-Pointer New planar channel waveguides to be applied as EDWA in the C telecommunication band.

Silicon waveguides produced by wafer bonding

DEFF Research Database (Denmark)

Poulsen, Mette; Jensen, Flemming; Bunk, Oliver

2005-01-01

X-ray waveguides are successfully produced employing standard silicon technology of UV photolithography and wafer bonding. Contrary to theoretical expectations for similar systems even 100 mu m broad guides of less than 80 nm height do not collapse and can be used as one dimensional waveguides...

Nanoparticle sorting in silicon waveguide arrays

Science.gov (United States)

Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

2017-08-01

This paper presents the optical fractionation of nanoparticles in silicon waveguide arrays. The optical lattice is generated by evanescent coupling in silicon waveguide arrays. The hotspot size is tunable by changing the refractive index of surrounding liquids. In the experiment, 0.2-μm and 0.5-μm particles are separated with a recovery rate of 95.76%. This near-field approach is a promising candidate for manipulating nanoscale biomolecules and is anticipated to benefit the biomedical applications such as exosome purification, DNA optical mapping, cell-cell interaction, etc.

Directly UV written silica-on-silicon planar waveguides with low insertion loss

DEFF Research Database (Denmark)

Zauner, Dan; Svalgaard, Mikael; Kristensen, Martin

1998-01-01

in waveguide geometry, and excellent control of the refractive index step. Direct UV writing of waveguides became a realistic alternative to other fabrication methods when propagation losses below 0.2 dB/cm were reported in single-mode waveguides. However, the coupling loss to optical fibers remained high......, typically 1.8 dB/facet, which is significantly more than that obtained with other techniques. In this paper we present results in which the coupling loss to optical fibers has been lowered substantially. In addition, the glass photosensitivity has been increased, thus permitting shorter fabrication times......The photosensitive properties of germanosilica may be utilized to directly induce waveguide patterns into thin-film structures using ultraviolet (UV) light. The advantages of fabricating planar waveguides with UV light include the absence of photolithography and reactive ion etching, flexibility...

Broadband and scalable optical coupling for silicon photonics using polymer waveguides

Science.gov (United States)

La Porta, Antonio; Weiss, Jonas; Dangel, Roger; Jubin, Daniel; Meier, Norbert; Horst, Folkert; Offrein, Bert Jan

2018-04-01

We present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.

Optical biosensor based on a silicon nanowire ridge waveguide for lab on chip applications

International Nuclear Information System (INIS)

Gamal, Rania; Ismail, Yehea; Swillam, Mohamed A

2015-01-01

We propose a novel sensor using a silicon nanowire ridge waveguide (SNRW). This waveguide is comprised of an array of silicon nanowires on an insulator substrate that has the envelope of a ridge waveguide. The SNRW inherently maximizes the overlap between the material-under-test and the incident light wave by introducing voids to the otherwise bulk structure. When a sensing sample is injected, the voids within the SNRW adopt the refractive index of the material-under-test. Hence, the strong contribution of the material-under-test to the overall modal effective index will greatly augment the sensitivity. Additionally, the ridge structure provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. Finite-difference time-domain simulations are conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment is more than 170 times the change perceived in an evanescent-detection based bulk silicon ridge waveguide. Moreover, the SNRW proves to be more sensitive than recent other, non-evanescent sensors. In addition, the detection limit for this structure was revealed to be as small as 10 −8 . A compact bimodal waveguide based on SNRW is designed and tested. It delivers high sensitivity values that offer comparable performance to similar low-index light-guiding sensing configurations; however, our proposed structure has much smaller footprints and allows high dense integration for lab-on-chip applications. (paper)

Phosphorus-doped thin silica films characterized by magic-angle spinning nuclear magnetic resonance spectroscopy

DEFF Research Database (Denmark)

Jacobsen, H.J.; Skibsted, J.; Kristensen, Martin

2001-01-01

Magic-angle spinning nuclear magnetic resonance spectra of 31P and 29Si have been achieved for a thin silica film doped with only 1.8% 31P and deposited by plasma enhanced chemical vapor deposition on a pure silicon wafer. The observation of a symmetric 31P chemical shift tensor is consistent...

Photonic crystal waveguides with semi-slow light and tailored dispersion properties

DEFF Research Database (Denmark)

Frandsen, Lars Hagedorn; Lavrinenko, Andrei; Fage-Pedersen, Jacob

2006-01-01

waveguide with either vanishing, positive, or negative group velocity dispersion and semi-slow light. We realize experimentally a silicon-on-insulator photonic crystal waveguide having nearly constant group velocity [similar to]c$-0$//34 in an 11-nm bandwidth below the silica-line. $CPY@2006 Optical Society...

Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

Directory of Open Access Journals (Sweden)

Kapil Debnath

2016-11-01

Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

Polarization effects in silicon-clad optical waveguides

Science.gov (United States)

Carson, R. F.; Batchman, T. E.

1984-01-01

By changing the thickness of a semiconductor cladding layer deposited on a planar dielectric waveguide, the TE or TM propagating modes may be selectively attenuated. This polarization effect is due to the periodic coupling between the lossless propagating modes of the dielectric slab waveguide and the lossy modes of the cladding layer. Experimental tests involving silicon claddings show high selectivity for either polarization.

Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

DEFF Research Database (Denmark)

Jensen, Asger Sellerup

This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

Ultrafast Nonlinear Signal Processing in Silicon Waveguides

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Mulvad, Hans Christian Hansen; Hu, Hao

2012-01-01

We describe recent demonstrations of exploiting highly nonlinear silicon waveguides for ultrafast optical signal processing. We describe wavelength conversion and serial-to-parallel conversion of 640 Gbit/s data signals and 1.28 Tbit/s demultiplexing and all-optical sampling.......We describe recent demonstrations of exploiting highly nonlinear silicon waveguides for ultrafast optical signal processing. We describe wavelength conversion and serial-to-parallel conversion of 640 Gbit/s data signals and 1.28 Tbit/s demultiplexing and all-optical sampling....

Second-harmonic imaging of poled silica waveguides

DEFF Research Database (Denmark)

Arentoft, Jesper; Pedersen, Kjeld; Bozhevolnyi, Sergey I.

2000-01-01

Electric-field poled silica-based waveguides are characterized by measurements of second-harmonic generation (SHG) and of the linear electro-optic effect (LEO). A SHG scanning technique allowing for high-resolution imaging of poled devices is demonstrated. Scans along the direction of the poling...

Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides

DEFF Research Database (Denmark)

Pu, Minhao; Chen, Yaohui; Yvind, Kresten

2014-01-01

Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides is investigated. A conversion bandwidth reduction up to 63% is observed in simulation due to the thermal effects.......Influence of thermal effects induced by nonlinear absorption on four-wave mixing in silicon waveguides is investigated. A conversion bandwidth reduction up to 63% is observed in simulation due to the thermal effects....

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Energy Technology Data Exchange (ETDEWEB)

Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Nanoscale devices based on plasmonic coaxial waveguide resonators

Science.gov (United States)

Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

2015-02-01

Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

Guided acoustic and optical waves in silicon-on-insulator for Brillouin scattering and optomechanics

Directory of Open Access Journals (Sweden)

Christopher J. Sarabalis

2016-10-01

Full Text Available We numerically study silicon waveguides on silica showing that it is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI material system. Thin waveguides, or fins, exhibit geometrically softened mechanical modes at gigahertz frequencies with phase velocities below the Rayleigh velocity in glass, eliminating acoustic radiation losses. We propose slot waveguides on glass with telecom optical frequencies and strong radiation pressure forces resulting in Brillouin gains on the order of 500 and 50 000 W−1m−1 for backward and forward Brillouin scattering, respectively.

Silicon waveguided components for the long-wave infrared region

Science.gov (United States)

Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.

2006-10-01

We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µm telecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane waveguide offers low-loss transmission from 1.2 to 6 µm and from 24 to 100 µm. This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib. Alternatively, low-loss waveguiding from 1.9 to 14.7 µm is assured by employing a crystal Ge rib grown directly upon the Si substrate. The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon's 6-24 µm multi-phonon absorption. Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings. The hollow channel offers less than 1.7 dB cm-1 loss from 1.2 to 100 µm. .

Dry-film polymer waveguide for silicon photonics chip packaging.

Science.gov (United States)

Hsu, Hsiang-Han; Nakagawa, Shigeru

2014-09-22

Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

FDTD simulation of amorphous silicon waveguides for microphotonics applications

Science.gov (United States)

Fantoni, A.; Lourenço, P.; Pinho, P.; Vieira, M.,

2017-05-01

In this work we correlate the dimension of the waveguide with small variations of the refractive index of the material used for the waveguide core. We calculate the effective modal refractive index for different dimensions of the waveguide and with slightly variation of the refractive index of the core material. These results are used as an input for a set of Finite Difference Time Domain simulation, directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding. The study considers simple linear waveguides with rectangular section for studying the modal attenuation expected at different wavelengths. Transmission efficiency is determined analyzing the decay of the light power along the waveguides. As far as near infrared wavelengths are considered, a-Si:H shows a behavior highly dependent on the light wavelength and its extinction coefficient rapidly increases as operating frequency goes into visible spectrum range. The simulation results show that amorphous silicon can be considered a good candidate for waveguide material core whenever the waveguide length is as short as a few centimeters. The maximum transmission length is highly affected by the a-Si:H defect density, the mid-gap density of states and by the waveguide section area. The simulation results address a minimum requirement of 300nm×400nm waveguide section in order to keep attenuation below 1 dB cm-1.

Planar waveguide laser in Er/Al-doped germanosilicate

DEFF Research Database (Denmark)

Guldberg-Kjær, Søren Andreas; Hübner, Jörg; Kristensen, Martin

1999-01-01

A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations.......A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations....

Monolithic integration of microfluidic channels and optical waveguides in silica on silicon

DEFF Research Database (Denmark)

Friis, Peter; Hoppe, Karsten; Leistiko, Otto

2001-01-01

-back technique are possible, but troublesome. We present a simple but efficient alternative: By means of changing the waveguide layout, bonding pads are formed along the microfluidic channels. With the same height as the waveguide, they effectively prevent leakage and hermetically seal the channels during...

Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides

Science.gov (United States)

Sharma, Rajat; Puckett, Matthew W.; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

2015-06-01

We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to fixed interface charges and trap states at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

Sub-wavelength grating mode transformers in silicon slab waveguides.

Science.gov (United States)

Bock, Przemek J; Cheben, Pavel; Schmid, Jens H; Delâge, André; Xu, Dan-Xia; Janz, Siegfried; Hall, Trevor J

2009-10-12

We report on several new types of sub-wavelength grating (SWG) gradient index structures for efficient mode coupling in high index contrast slab waveguides. Using a SWG, an adiabatic transition is achieved at the interface between silicon-on-insulator waveguides of different geometries. The SWG transition region minimizes both fundamental mode mismatch loss and coupling to higher order modes. By creating the gradient effective index region in the direction of propagation, we demonstrate that efficient vertical mode transformation can be achieved between slab waveguides of different core thickness. The structures which we propose can be fabricated by a single etch step. Using 3D finite-difference time-domain simulations we study the loss, polarization dependence and the higher order mode excitation for two types (triangular and triangular-transverse) of SWG transition regions between silicon-on-insulator slab waveguides of different core thicknesses. We demonstrate two solutions to reduce the polarization dependent loss of these structures. Finally, we propose an implementation of SWG structures to reduce loss and higher order mode excitation between a slab waveguide and a phase array of an array waveguide grating (AWG). Compared to a conventional AWG, the loss is reduced from -1.4 dB to < -0.2 dB at the slab-array interface.

Ridge Waveguide Structures in Magnesium-Doped Lithium Niobate

Science.gov (United States)

Himmer, Phillip; Battle, Philip; Suckow, William; Switzer, Greg

2011-01-01

This work proposes to establish the feasibility of fabricating isolated ridge waveguides in 5% MgO:LN. Ridge waveguides in MgO:LN will significantly improve power handling and conversion efficiency, increase photonic component integration, and be well suited to spacebased applications. The key innovation in this effort is to combine recently available large, high-photorefractive-damage-threshold, z-cut 5% MgO:LN with novel ridge fabrication techniques to achieve high-optical power, low-cost, high-volume manufacturing of frequency conversion structures. The proposed ridge waveguide structure should maintain the characteristics of the periodically poled bulk substrate, allowing for the efficient frequency conversion typical of waveguides and the high optical damage threshold and long lifetimes typical of the 5% doped bulk substrate. The low cost and large area of 5% MgO:LN wafers, and the improved performance of the proposed ridge waveguide structure, will enhance existing measurement capabilities as well as reduce the resources required to achieve high-performance specifications. The purpose of the ridge waveguides in MgO:LN is to provide platform technology that will improve optical power handling and conversion efficiency compared to existing waveguide technology. The proposed ridge waveguide is produced using standard microfabrication techniques. The approach is enabled by recent advances in inductively coupled plasma etchers and chemical mechanical planarization techniques. In conjunction with wafer bonding, this fabrication methodology can be used to create arbitrarily shaped waveguides allowing complex optical circuits to be engineered in nonlinear optical materials such as magnesium doped lithium niobate. Researchers here have identified NLO (nonlinear optical) ridge waveguide structures as having suitable value to be the leading frequency conversion structures. Its value is based on having the low-cost fabrication necessary to satisfy the challenging pricing

Nonlinear optical interactions in silicon waveguides

Directory of Open Access Journals (Sweden)

Kuyken B.

2017-03-01

Full Text Available The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

Low- and high-index sol-gel films for planar and channel-doped waveguides

Science.gov (United States)

Canva, Michael; Chaput, Frederic; Lahlil, Khalid; Rachet, Vincent; Goudket, Helene; Boilot, Jean-Pierre; Levy, Yves

2001-11-01

In view of realizing integrated optic components based on effects such as electro-optic, chi(2):chi(2) cascading, stimulated emission,... one has to first synthesize materials with the proper functionality; this may be achieved by doping solid state matrices by the appropriate organic chromophores. Second, and as important, these materials have to be properly structured into the final optical guiding structures. We shall report on issues related to the realization of chromophore-doped planar waveguides as well as channel waveguides. These structures were realized by either photo-transformation such as photo- chromism and photo-bleaching or reactive ion etching technique, starting with chromophore doped sol-gel materials at high loading contents for which optical index may be controlled via the local dopant concentration. With these materials and techniques, waveguides and components characterized by propagation losses of the order of a cm-1, measured off the edge of the absorption band of the doping species, were fabricated. In order to be also able to study and use waveguide functionalized with low concentration of chromophore species, we developed new sol-gel materials of high optical index, yet low temperature processed. These new films are under study to evaluate their potential as host for organic doped waveguides devices.

Transverse Writing of Multimode Interference Waveguides inside Silica Glass by Femtosecond Laser Pulses

International Nuclear Information System (INIS)

Da-Yong, Liu; Yan, Li; Yan-Ping, Dou; Heng-Chang, Guo; Hong, Yang; Qi-Huang, Gong

2008-01-01

Multi-mode interference waveguides are fabricated inside silica glass by transverse writing geometry with femtosecond laser pulses. The influences of several writing and reading factors on the output mode are systematically studied. The experimental results of straight waveguides are in good agreement with the simulations by the beam propagation method. By integrating a straight waveguide with a bent waveguide, a 1 × 2 multi-mode splitter is formed and 2 × 3 lobes are observed in the output mode. (fundamental areas of phenomenology (including applications))

Formation of plasma induced surface damage in silica glass etching for optical waveguides

International Nuclear Information System (INIS)

Choi, D.Y.; Lee, J.H.; Kim, D.S.; Jung, S.T.

2004-01-01

Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit

Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

Science.gov (United States)

Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

2014-05-01

We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

Proton irradiation effects on optical attenuation in doped- and pure-silica fibers

International Nuclear Information System (INIS)

Sakasai, Kaoru; Bueker, H.; Haesing, F.W.; Pfeiffer, F.

1999-05-01

Optical attenuation in doped- and pure-silica fibers was measured at wavelengths of 470 nm, 660 nm, and 850 nm during and after 20 MeV proton irradiation. In the experiment the fibers were arranged on a holder to make one layer' so that uniform proton irradiation can be achieved to them. The induced loss of the doped-silica fiber increased strongly at the beginning of the first irradiation, and decreased slowly after stopping of the beam. In the second irradiation, however, the developed loss was not so large. On the other hand, the loss of the pure-silica fiber increased gradually in the first irradiation, and decreased very quickly after the beam stopped. The loss increased stepwise at the very beginning of the second irradiation. Small luminescence from the fibers during irradiation was observed also. The luminescence of the pure-silica fiber was slightly larger than that of the doped-silica fiber. The induced loss of HCP fibers was also measured when a SiO 2 plate was set in front of the fibers. It may be possible to estimate the proton dose in materials using fiber-optic technique. Proton sensitivities of doped- and pure-silica fibers were, respectively, 1.0 x 10 -10 at 660 nm and 5.5 x 10 -12 at 470 nm in units of (dB/m)/(protons/cm 2 ), where the values were estimated from the slope of the loss growth curves at the beginning of the first irradiation. (author)

Waveguide silicon nitride grating coupler

Science.gov (United States)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

Energy Technology Data Exchange (ETDEWEB)

Shah, Miraj, E-mail: m.shah@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Wojdak, Maciej; Kenyon, Anthony J. [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Halsall, Matthew P.; Li, Hang; Crowe, Iain F. [Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Sackville St Building, Manchester M13 9PL (United Kingdom)

2012-12-15

Erbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er{sup 3+} ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component. In this paper, we report on SiO{sub 2} thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54 {mu}m Er decay components; a fast microsecond component, and a relatively long lifetime component (10 ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast {mu}s decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature.

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Polarization insensitive wavelength conversion in a dispersion-engineered silicon waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Peucheret, Christophe

2012-01-01

We experimentally demonstrate polarization-insensitive all optical wavelength conversion of a 10-Gb/s DPSK data signal based on four-wave mixing in a silicon waveguide with an angled-pump scheme. Dispersion engineering is applied to the silicon waveguide to obtain similar four-wave mixing convers...... conversion performances for both the TE and TM modes. Bit-error rate measurements are performed and error-free operation is achieved. We also demonstrate polarization-insensitive wavelength conversion with a large separation between the idler and signal using a dual-pump configuration....

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

Science.gov (United States)

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Radiation resistance of GeO2-doped silica core optical fibers

International Nuclear Information System (INIS)

Shibata, Shuichi; Nakahara, Motohiro; Omori, Yasuharu

1985-01-01

Effects of hlogen addition to silica glass on the loss in optical fibers are examined by using halogen-free, chlorine-containing and fluorine-containing GeO 2 -doped silica core optical fibers. Measurements are made for dependence of induced loss in these optical fibers on various factors such as wavelength and total dose of gamma radiation as well as GeO 2 content. Ultraviolet absorption spectra are also observed. In addition, effects of halogens added to pure silica fibers are considered on the basis of Raman spectra of three different optical fibers (pure, F-doped, and F- and GeO 2 -codoped silica core). Thus, it is concluded that (1) addition of halogens (F and Cl) serves to decrease GeO defects and Ge(3) defects in GeO 2 -doped silica optical fibers ; (2) addition of halogens suppresses the increase in loss in GeO 2 -doped silica optical fibers induced by gamma radiation ; and (3) there are close relations between the increase in loss induced by gamma radiation and defects originally existing in the fibers. Effects of halogens added to GeO 2 -doped and pure silica optical fibers can be explained on the basis of the latter relations. (Nogami, K.)

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Theoretical Analysis of Spectral Correlations Between Photon Pairs Generated in Nanoscale Silicon Waveguides

International Nuclear Information System (INIS)

Lu Liang-Liang; Xu Ping; Xu Jian-Ning; Zhu Shi-Ning; He Guang-Qiang

2015-01-01

Spontaneous four wave mixing in nonlinear waveguide is one of the excellent technique for generating photon pairs in well-defined guided modes. Here we present a comprehensive study of the frequency characteristic of correlated photon pairs generated in telecom C-band from a dispersion-engineered silicon wire waveguide. We have demonstrated that the waveguide configuration, shape of pump pulse, two-photon absorption as well as linear losses have significant influences on the biphoton spectral characteristics and the amount of frequency entanglement generated. The superior performance as well as the structural compactness and CMOS compatibility makes the silicon wire waveguide an ideal integrated platform for the implementation of on-chip quantum technologies. (paper)

Poling effect of a charge-trapping layer in glass waveguides

DEFF Research Database (Denmark)

Ren, Yitao; Marckmann, Carl Johan; Jacobsen, Rune Shim

2004-01-01

Germanium-doped multi-layer waveguides containing a silicon oxy-nitride layer as a charge trapper are thermally poled in an air environment. Compared to the waveguides without the trapping layer, the induced linear electro-optic coefficient increases more than 20%. A comparable rise in the intern...

Significantly High Modulation Efficiency of Compact Graphene Modulator Based on Silicon Waveguide.

Science.gov (United States)

Shu, Haowen; Su, Zhaotang; Huang, Le; Wu, Zhennan; Wang, Xingjun; Zhang, Zhiyong; Zhou, Zhiping

2018-01-17

We theoretically and experimentally demonstrate a significantly large modulation efficiency of a compact graphene modulator based on a silicon waveguide using the electro refractive effect of graphene. The modulation modes of electro-absorption and electro-refractive can be switched with different applied voltages. A high extinction ratio of 25 dB is achieved in the electro-absorption modulation mode with a driving voltage range of 0 V to 1 V. For electro-refractive modulation, the driving voltage ranges from 1 V to 3 V with a 185-pm spectrum shift. The modulation efficiency of 1.29 V · mm with a 40-μm interaction length is two orders of magnitude higher than that of the first reported graphene phase modulator. The realisation of phase and intensity modulation with graphene based on a silicon waveguide heralds its potential application in optical communication and optical interconnection systems.

Nonlinear optical properties of silicon waveguides

International Nuclear Information System (INIS)

Tsang, H K; Liu, Y

2008-01-01

Recent work on two-photon absorption (TPA), stimulated Raman scattering (SRS) and optical Kerr effect in silicon-on-insulator (SOI) waveguides is reviewed and some potential applications of these optical nonlinearities, including silicon-based autocorrelation detectors, optical amplifiers, high speed optical switches, optical wavelength converters and self-phase modulation (SPM), are highlighted. The importance of free carriers generated by TPA in nonlinear devices is discussed, and a generalized definition of the nonlinear effective length to cater for nonlinear losses is proposed. How carrier lifetime engineering, and in particular the use of helium ion implantation, can enhance the nonlinear effective length for nonlinear devices is also discussed

Ultra-compact Higher-Order-Mode Pass Filter in a Silicon Waveguide

DEFF Research Database (Denmark)

Guan, Xiaowei; Frandsen, Lars Hagedorn; Ding, Yunhong

2015-01-01

An 3.7 μm long higher-order-mode pass filter with an extinction ratio larger than 20 dB is demonstrated in a 1D corrugated silicon multimode waveguide......An 3.7 μm long higher-order-mode pass filter with an extinction ratio larger than 20 dB is demonstrated in a 1D corrugated silicon multimode waveguide...

Sub-micrometer waveguide for nano-optics

DEFF Research Database (Denmark)

Rottwitt, Karsten; Dyndgaard, Morten Glarborg; Andersen, Karin Nordström

2003-01-01

With the recent progress within the field of processing nano structures, there is an increasing interest in coupling light into such structures both for characterization of optical properties and new optical components. In this work we propose the use of a sub-micrometer planar waveguide for prob......With the recent progress within the field of processing nano structures, there is an increasing interest in coupling light into such structures both for characterization of optical properties and new optical components. In this work we propose the use of a sub-micrometer planar waveguide...... for probing the reflection of light against a nano structure. The planar waveguide is based on a silicon nitride core layer, surrounded by a silica cladding region. In our design we utilize this waveguide to couple light into a nano-structure....

Bidisperse silica nanoparticles close-packed monolayer on silicon substrate by three step spin method

Science.gov (United States)

Khanna, Sakshum; Marathey, Priyanka; Utsav, Chaliawala, Harsh; Mukhopadhyay, Indrajit

2018-05-01

We present the studies on the structural properties of monolayer Bidisperse silica (SiO2) nanoparticles (BDS) on Silicon (Si-100) substrate using spin coating technique. The Bidisperse silica nanoparticle was synthesised by the modified sol-gel process. Nanoparticles on the substrate are generally assembled in non-close/close-packed monolayer (CPM) form. The CPM form is obtained by depositing the colloidal suspension onto the silicon substrate using complex techniques. Here we report an effective method for forming a monolayer of bidisperse silica nanoparticle by three step spin coating technique. The samples were prepared by mixing the monodisperse solutions of different particles size 40 and 100 nm diameters. The bidisperse silica nanoparticles were self-assembled on the silicon substrate forming a close-packed monolayer film. The scanning electron microscope images of bidisperse films provided in-depth film structure of the film. The maximum surface coverage obtained was around 70-80%.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

Science.gov (United States)

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Silica doped with lanthanum sol–gel thin films for corrosion protection

International Nuclear Information System (INIS)

Abuín, M.; Serrano, A.; Llopis, J.; García, M.A.; Carmona, N.

2012-01-01

We present here anticorrosive silica coatings doped with lanthanum ions for the protection of metallic surfaces as an alternative to chromate (VI)-based conversion coatings. The coatings were synthesized by the sol–gel method starting from silicon alkoxides and two different lanthanum precursors: La (III) acetate hydrate and La (III) isopropoxide. Artificial corrosion tests in acid and alkaline media showed their effectiveness for the corrosion protection of AA2024 aluminum alloy sheets for coating prepared with both precursors. The X-ray absorption Near Edge Structure and X-ray Absorption Fine Structure analysis of the coatings confirmed the key role of lanthanum in the structural properties of the coating determining its anticorrosive properties. - Highlights: ► Silica sol–gel films doped with lanthanum ions were synthesized. ► Films from lanthanum-acetate and La-alkoxide were prepared for comparison purposes. ► La-acetate is an affordable chemical reactive preferred for the industry. ► Films properties were explored by scanning electron microscopy and X-Ray absorption spectroscopy. ► An alternative to anticorrosive pre-treatments for metallic surfaces is suggested.

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

2015-01-01

into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

High-resolution second-harmonic microscopy of poled silica waveguides

DEFF Research Database (Denmark)

Beermann, Jonas; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

2003-01-01

, and the spatial resolution at the pump wavelength of 790 nm is determined to be better than 0.7 m. SHSOM images of positively poled silica waveguides were obtained for different polarization combinations of the incident pump beam and the detected second-harmonic radiation. Calibration of the SHSOM with a Ga...

Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

DEFF Research Database (Denmark)

Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

2015-01-01

IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... support and deep reactive-ion etching forms the waveguide bulk with smooth and nearly vertical sidewalls. Aluminum metallization covers the etched sidewalls, fully enclosing the waveguides in metal from all sides. Waveguides are fabricated with a rectangular cross section of 560 μm x 280 μm. The measured...

Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

Directory of Open Access Journals (Sweden)

J. Bornacelli

2014-01-01

Full Text Available Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs have become the main building block of silicon photonic (modulators, waveguide, source, and detectors. In this work, we present an approach based on implantation of Ag (or Au ions and a proper thermal annealing in order to improve the photoluminescence (PL emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface. Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

Enhanced four-wave mixing in graphene-silicon slow-light photonic crystal waveguides

International Nuclear Information System (INIS)

Zhou, Hao; Gu, Tingyi; McMillan, James F.; Wong, Chee Wei; Petrone, Nicholas; Zande, Arend van der; Hone, James C.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan

2014-01-01

We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

Science.gov (United States)

Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

2015-08-12

Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

DEFF Research Database (Denmark)

Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

2016-01-01

We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

Institute of Scientific and Technical Information of China (English)

Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

2011-01-01

The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

Phase-sensitive optical processing in silicon waveguides

DEFF Research Database (Denmark)

Petermann, Klaus; Gajda, A.; Dziallas, Claudia

2015-01-01

Parametric optical signal processing is reviewed for silicon nano-rib-waveguides with a reverse-biased pin-junction. Phase-sensitive parametric amplification with a phase-sensitive extinction of more than 20 dB has been utilized for the regeneration of DPSK signals...

Ultra-high speed all-optical signal processing using silicon waveguides and a carbon nanotubes based mode-locked laser

DEFF Research Database (Denmark)

Ji, Hua

This thesis concerns the use of nano-engineered silicon waveguides for ultra-high speed optical serial data signal processing. The fundamental nonlinear properties of nano-engineered silicon waveguides are characterized. Utilizing the nonlinear effect in nano-engineered silicon waveguides for dem...

Secondary electron emission yield on poled silica based thick films

DEFF Research Database (Denmark)

Braga, D.; Poumellec, B.; Cannas, V.

2004-01-01

Studies on the distribution of the electric field produced by a thermal poling process in a layer of Ge-doped silica on silicon substrate, by using secondary electron emission yield (SEEY) measurements () are presented. Comparing 0 between poled and unpoled areas, the SEEY at the origin of electr...

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Copper nanorod array assisted silicon waveguide polarization beam splitter.

Science.gov (United States)

Kim, Sangsik; Qi, Minghao

2014-04-21

We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

Transmutation doping of silicon solar cells

Science.gov (United States)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

Science.gov (United States)

Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

2015-02-01

Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

On-chip all-optical wavelength conversion of multicarrier, multilevel modulation (OFDM m-QAM) signals using a silicon waveguide.

Science.gov (United States)

Li, Chao; Gui, Chengcheng; Xiao, Xi; Yang, Qi; Yu, Shaohua; Wang, Jian

2014-08-01

We report on-chip all-optical wavelength conversion of multicarrier multilevel modulation signals in a silicon waveguide. Using orthogonal frequency-division multiplexing (OFDM) combined with advanced multilevel quadrature amplitude modulation (QAM) signals (i.e., OFDM m-QAM), we experimentally demonstrate all-optical wavelength conversions of 3.2 Gbaud/s OFDM 16/32/64/128-QAM signals based on the degenerate four-wave mixing (FWM) nonlinear effect in a silicon waveguide. The measured optical signal-to-noise ratio (OSNR) penalties of wavelength conversion are ∼3  dB for OFDM 16-QAM and ∼4  dB for OFDM 32-QAM at 7% forward error correction (FEC) threshold and ∼3.5  dB for OFDM 64-QAM and ∼4.5  dB for OFDM 128-QAM at 20% FEC threshold. The observed clear constellations of converted idlers imply favorable performance obtained for silicon-waveguide-based OFDM 16/32/64/128-QAM wavelength conversions.

Modeling of the electromagnetic field and level populations in a waveguide amplifier: a multi-scale time problem.

Science.gov (United States)

Fafin, Alexandre; Cardin, Julien; Dufour, Christian; Gourbilleau, Fabrice

2013-10-07

A new algorithm based on auxiliary differential equation and finite difference time domain method (ADE-FDTD method) is presented to model a waveguide whose active layer is constituted of a silica matrix doped with rare-earth and silicon nanograins. The typical lifetime of rare-earth can be as large as some ms, whereas the electromagnetic field in a visible range and near-infrared is characterized by a period of the order of fs. Due to the large difference between these two characteristic times, the conventional ADE-FDTD method is not suited to treat such systems. A new algorithm is presented so that the steady state of rare earth and silicon nanograins electronic levels populations along with the electromagnetic field can be fully described. This algorithm is stable and applicable to a wide range of optical gain materials in which large differences of characteristic lifetimes are present.

Mechanical Kerr nonlinearities due to bipolar optical forces between deformable silicon waveguides.

Science.gov (United States)

Ma, Jing; Povinelli, Michelle L

2011-05-23

We use an analytical method based on the perturbation of effective index at fixed frequency to calculate optical forces between silicon waveguides. We use the method to investigate the mechanical Kerr effect in a coupled-waveguide system with bipolar forces. We find that a positive mechanical Kerr coefficient results from either an attractive or repulsive force. An enhanced mechanical Kerr coefficient several orders of magnitude larger than the intrinsic Kerr coefficient is obtained in waveguides for which the optical mode approaches the air light line, given appropriate design of the waveguide dimensions.

Optical study of planar waveguides based on oxidized porous silicon impregnated with laser dyes

Energy Technology Data Exchange (ETDEWEB)

Chouket, A. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT-6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)], E-mail: habib.elhouichet@fst.rnu.tn; Oueslati, M. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)

2009-05-15

Oxidized porous silicon optical planar waveguides were elaborated and impregnated with rhodamine B and rhodamine 6G. The waveguiding, absorption, and photoluminescence properties of these impregnated waveguides were studied. Successful impregnation of the structure with laser dyes is shown from photoluminescence and reflectivity measurements. Furthermore, the reflectivity spectra prove the homogenous incorporation of both dye molecules inside the pores of the matrices. The refractive indices of waveguide layers were determined before and after dye impregnation to indicate the conservation of guiding conditions. The optical losses in the visible wavelengths are studied as a function of dye concentration. The dye absorption is the main reason for these losses.

Silica doped with lanthanum sol-gel thin films for corrosion protection

Energy Technology Data Exchange (ETDEWEB)

Abuin, M. [Department of Materials Physics, Complutense University at Madrid, Avda. Complutense sn, 28004 Madrid (Spain); Serrano, A. [Glass and Ceramic Institute, CSIC, C. Kelsen 5, 28049 Madrid (Spain); Llopis, J. [Department of Materials Physics, Complutense University at Madrid, Avda. Complutense sn, 28004 Madrid (Spain); Garcia, M.A. [Glass and Ceramic Institute, CSIC, C. Kelsen 5, 28049 Madrid (Spain); IMDEA Nanoscience, Fco. Tomas y Valiente 7, 28049 Madrid (Spain); Carmona, N., E-mail: n.carmona@fis.ucm.es [Department of Materials Physics, Complutense University at Madrid, Avda. Complutense sn, 28004 Madrid (Spain)

2012-06-01

We present here anticorrosive silica coatings doped with lanthanum ions for the protection of metallic surfaces as an alternative to chromate (VI)-based conversion coatings. The coatings were synthesized by the sol-gel method starting from silicon alkoxides and two different lanthanum precursors: La (III) acetate hydrate and La (III) isopropoxide. Artificial corrosion tests in acid and alkaline media showed their effectiveness for the corrosion protection of AA2024 aluminum alloy sheets for coating prepared with both precursors. The X-ray absorption Near Edge Structure and X-ray Absorption Fine Structure analysis of the coatings confirmed the key role of lanthanum in the structural properties of the coating determining its anticorrosive properties. - Highlights: Black-Right-Pointing-Pointer Silica sol-gel films doped with lanthanum ions were synthesized. Black-Right-Pointing-Pointer Films from lanthanum-acetate and La-alkoxide were prepared for comparison purposes. Black-Right-Pointing-Pointer La-acetate is an affordable chemical reactive preferred for the industry. Black-Right-Pointing-Pointer Films properties were explored by scanning electron microscopy and X-Ray absorption spectroscopy. Black-Right-Pointing-Pointer An alternative to anticorrosive pre-treatments for metallic surfaces is suggested.

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform.

Science.gov (United States)

Nielsen, Michael P; Lafone, Lucas; Rakovich, Aliaksandra; Sidiropoulos, Themistoklis P H; Rahmani, Mohsen; Maier, Stefan A; Oulton, Rupert F

2016-02-10

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Electro-optical logic gates based on graphene-silicon waveguides

Science.gov (United States)

Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

2016-08-01

In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

The passive optical properties of a silicon nanoparticle-embedded benzocyclobutene polymer waveguide

International Nuclear Information System (INIS)

Chiu, J.-J.; Perng, Tsong P

2008-01-01

The passive optical properties of a silicon nanoparticle-embedded benzocyclobutene (BCB) waveguide were investigated. The silicon nanoparticles, of a size varying from 6 to 25 nm, were prepared by vapor condensation. The transmission modes and losses were examined by the prism coupler and cut-back methods. A He-Ne laser beam with a wavelength of 6328 A was used to measure the effective index and thickness of the waveguide. Laser light could be efficiently coupled into the BCB waveguide when the embedded Si nanoparticles were smaller than 6 nm. The film thickness and effective index of the Si-embedded BCB waveguide were measured to be 1.825 μm and 1.565, respectively. The optical transmission losses of the pure BCB and Si-embedded ridge waveguides measured by the cut-back method were 0.85 and 1.63 dB cm -1 , respectively. Although the optical loss was increased by the embedded Si, the disturbance of the output contour was quite small. This result demonstrates that the nanoparticle-embedded polymer waveguide may be used for optoelectronic integrated circuits

Radiation hardening in sol-gel derived Er3+-doped silica glasses

International Nuclear Information System (INIS)

Hari Babu, B.; León Pichel, Mónica; Ollier, Nadège; El Hamzaoui, Hicham; Bigot, Laurent; Savelii, Inna; Bouazaoui, Mohamed; Poumellec, Bertrand; Lancry, Matthieu; Ibarra, Angel

2015-01-01

The aim of the present paper is to report the effect of radiation on the Er 3+ -doped sol-gel silica glasses. A possible application of these sol-gel glasses could be their use in harsh radiation environments. The sol-gel glasses are fabricated by densification of erbium salt-soaked nanoporous silica xerogels through polymeric sol-gel technique. The radiation-induced attenuation of Er 3+ -doped sol-gel silica is found to increase with erbium content. Electron paramagnetic resonance studies reveal the presence of E′ δ point defects. This happens in the sol-gel aluminum-silica glass after an exposure to γ-rays (kGy) and in sol-gel silica glass after an exposure to electrons (MGy). The concentration levels of these point defects are much lower in γ-ray irradiated sol-gel silica glasses. When the samples are co-doped with Al, the exposure to γ-ray radiation causes a possible reduction of the erbium valence from Er 3+ to Er 2+ ions. This process occurs in association with the formation of aluminum oxygen hole centers and different intrinsic point defects

Planar Silicon Optical Waveguide Light Modulators

DEFF Research Database (Denmark)

Leistiko, Otto; Bak, H.

1994-01-01

that values in the nanosecond region should be possible, however, the measured values are high, 20 microseconds, due to the large area of the injector junctions, 1× 10¿2 cm2, and the limitations imposed by the detection circuit. The modulating properties of these devices are impressive, measurements......The results of an experimental investigation of a new type of optical waveguide based on planar technology in which the liglht guiding and modulation are achieved by exploiting free carrier effects in silicon are presented. Light is guided between the n+ substrate and two p+ regions, which also...... serve as carrier injectors for controling absorption. Light confinement of single mode devices is good, giving spot sizes of 9 ¿m FWHM. Insertion loss measurements indicate that the absorption losses for these waveguides are extremely low, less 1 dB/cm. Estimates of the switching speed indicate...

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

DEFF Research Database (Denmark)

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally...... in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines...

Nd:Ta2O5 rib waveguide lasers

International Nuclear Information System (INIS)

Unal, Bayram; Tai, C.-Y.; Shepherd, David P.; Wilkinson, James S.; Perney, Nicolas M.B.; Netti, M. Caterina; Parker, Gregory J.

2005-01-01

Ta 2 O 5 waveguides offer great potential for high-density active photonic crystal circuits and their combination with rare-earth dopants for active devices is of interest for increasing their potential functionality. To this end, neodymium-doped Ta 2 O 5 rib waveguide lasers have been fabricated on an oxidized silicon wafer by rf sputtering and argon ion-beam milling and laser action in this material has been demonstrated. Lasing was observed at wavelenghts between 1060 and 1080 nm and an absorbed pump power threshold of 87 mW was obtained

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Science.gov (United States)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Modelling, design and analysis of liquid crystal waveguides in preferentially etched silicon grooves

International Nuclear Information System (INIS)

Bellini, Bob; Beccherelli, Romeo

2009-01-01

This paper presents a fully consistent theoretical framework for liquid crystal (LC) channel waveguides that have been experimentally demonstrated in previous publications. We revise the optical design of the LC waveguides in silicon grooves and implement here a vectorial, fully consistent model of the LC waveguide electro-optical behaviour, based on the finite element method. The numerical investigation shows that LC waveguides demonstrate properties of propagation control and switching. They switch on and off with a low applied voltage. We discuss the major design parameters of the device and the effect of loss-inducing control electrodes.

Doping profile measurement on textured silicon surface

Science.gov (United States)

Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

2018-04-01

In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

Near-infrared optical properties of Yb3+-doped silicate glass waveguides prepared by double-energy proton implantation

Science.gov (United States)

Shen, Xiao-Liang; Zhu, Qi-Feng; Zheng, Rui-Lin; Lv, Peng; Guo, Hai-Tao; Liu, Chun-Xiao

2018-03-01

We report on the preparation and properties of an optical planar waveguide structure operating at 1539 nm in the Yb3+-doped silicate glass. The waveguide was formed by using (470 + 500) keV proton implantation at fluences of (1.0 + 2.0) × 1016 ions/cm2. The waveguiding characteristics including the guided-mode spectrum and the near-field image were investigated by the m-line technique and the finite-difference beam propagation method. The energy distribution for implanted protons and the refractive index profile for the proton-implanted waveguide were simulated by the stopping and range of ions in matter and the reflectivity calculation method. The proton-implanted Yb3+-doped silicate glass waveguide is a candidate for optoelectronic elements in the near-infrared region.

Silicon graphene waveguide tunable broadband microwave photonics phase shifter.

Science.gov (United States)

Capmany, José; Domenech, David; Muñoz, Pascual

2014-04-07

We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifter based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360° radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

Cerium-doped scintillating fused-silica fibers

Science.gov (United States)

Akchurin, N.; Cowden, C.; Damgov, J.; Dragoiu, C.; Dudero, P.; Faulkner, J.; Kunori, S.

2018-04-01

We report on a set of measurements made on (scintillating) cerium-doped fused-silica fibers using high-energy particle beams. These fibers were uniformly embedded in a copper absorber in order to utilize electromagnetic showers as a source of charged particles for generating signals. This new type of cerium-doped fiber potentially offers myriad new applications in calorimeters in high-energy physics, tracking systems, and beam monitoring detectors for future applications. The light yield, pulse shape, attenuation length, and light propagation speeds are given and discussed. Possible future applications are also explored.

Inverted opal luminescent Ce-doped silica glasses

Directory of Open Access Journals (Sweden)

R. Scotti

2006-01-01

Full Text Available Inverted opal Ce-doped silica glasses (Ce : Si molar ratio 1 ⋅ 10−3 were prepared by a sol-gel method using opals of latex microspheres as templates. The rare earth is homogeneously dispersed in silica host matrix, as evidenced by the absence of segregated CeO2, instead present in monolithic Ce-doped SG with the same cerium content. This suggests that the nanometric dimensions of bridges and junctions of the host matrix in the inverted opal structures favor the RE distribution avoiding the possible segregation of CeO2.

Fabrication of amorphous silica nanowires via oxygen plasma treatment of polymers on silicon

Science.gov (United States)

Chen, Zhuojie; She, Didi; Chen, Qinghua; Li, Yanmei; Wu, Wengang

2018-02-01

We demonstrate a facile non-catalytic method of fabricating silica nanowires at room temperature. Different polymers including photoresists, parylene C and polystyrene are patterned into pedestals on the silicon substrates. The silica nanowires are obtained via the oxygen plasma treatment on those pedestals. Compared to traditional strategies of silica nanowire fabrication, this method is much simpler and low-cost. Through designing the proper initial patterns and plasma process parameters, the method can be used to fabricate various regiment nano-scale silica structure arrays in any laboratory with a regular oxygen-plasma-based cleaner or reactive-ion-etching equipment.

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Science.gov (United States)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Effective carrier sweepout in a silicon waveguide by a metal-semiconductor-metal structure

DEFF Research Database (Denmark)

Ding, Yunhong; Hu, Hao; Ou, Haiyan

2015-01-01

We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated.......We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated....

Systematic comparison of FWM conversion efficiency in silicon waveguides and MRRs

DEFF Research Database (Denmark)

Xiong, Meng; Ding, Yunhong; Ou, Haiyan

2013-01-01

Wavelength conversion based on four-wave mixing is theoretically compared in silicon micro-ring resonators and nanowires under the effect of nonlinear loss. The impact of the bus waveguide length and MRR position are also quantified....

Microdefects in neutron-transmutationaly doped silicon

International Nuclear Information System (INIS)

Vysotskaya, V.V.; Gorin, S.N.; Gres'kov, I.M.; Sobolev, N.A.; Shek, E.I.

1988-01-01

Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed

Microdefects in neutron-transmutationaly doped silicon

Energy Technology Data Exchange (ETDEWEB)

Vysotskaya, V V; Gorin, S N; Gres' kov, I M; Sobolev, N A; Shek, E I

1988-03-01

Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.

Broadband Silicon-On-Insulator directional couplers using a combination of straight and curved waveguide sections.

Science.gov (United States)

Chen, George F R; Ong, Jun Rong; Ang, Thomas Y L; Lim, Soon Thor; Png, Ching Eng; Tan, Dawn T H

2017-08-03

Broadband Silicon-On-Insulator (SOI) directional couplers are designed based on a combination of curved and straight coupled waveguide sections. A design methodology based on the transfer matrix method (TMM) is used to determine the required coupler section lengths, radii, and waveguide cross-sections. A 50/50 power splitter with a measured bandwidth of 88 nm is designed and fabricated, with a device footprint of 20 μm × 3 μm. In addition, a balanced Mach-Zehnder interferometer is fabricated showing an extinction ratio of >16 dB over 100 nm of bandwidth.

A silicon-based electrical source for surface plasmon polaritons

NARCIS (Netherlands)

Walters, Robert J.; van Loon, Rob V.A.; Brunets, I.; Schmitz, Jurriaan; Polman, Albert

2009-01-01

This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes

Experimental Demonstration of Phase Sensitive Parametric Processes in a Nano-Engineered Silicon Waveguide

DEFF Research Database (Denmark)

Kang, Ning; Fadil, Ahmed; Pu, Minhao

2013-01-01

We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption.......We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption....

Dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating

DEFF Research Database (Denmark)

Guo, Kai; Christensen, Jesper B.; Christensen, Erik N.

2017-01-01

We numerically demonstrate dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating using a finite-difference mode solver. The proposed structure exhibits spectrally-flattened near-zero anomalous dispersion within the telecom wavelength range. We also numerica......We numerically demonstrate dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating using a finite-difference mode solver. The proposed structure exhibits spectrally-flattened near-zero anomalous dispersion within the telecom wavelength range. We also...

Luminescence of porous silicon doped by erbium

International Nuclear Information System (INIS)

Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

1996-01-01

The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

Photosensitized Oxidation of 9,10-Dimethylanthracene on Dye-Doped Silica Composites

Directory of Open Access Journals (Sweden)

Elim Albiter

2012-01-01

Full Text Available A series of cationic dyes, methylene blue (MB, safranin O (SF, toluidine blue (TB, and neutral red (NR, were successfully incorporated into a silica matrix by using ultrasound irradiation during the Stöber process. Several analyses were performed, including scanning dynamic light scattering (DLS, electron microscopy (SEM, nitrogen physisorption, FTIR spectroscopy, UV-vis, and diffuse reflectance spectroscopy. The entrapped dyes on silica were evaluated in singlet oxygen (1O2 generation under visible light irradiation, by means of the photosensitized oxidation of 9,10-dimethylanthracene (DMA. According to the results, the photocatalytic performance of the silica composites was improved, and the leakage of the dye from the particles was suppressed. Among these four different types of dye-doped silica composites, the SiO2-SF composite showed the most efficient delivery of 1O2.

Ridge Waveguide Structures in Magnesium-Doped Lithium Niobate, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — In this NASA Phase I STTR effort, the feasibility of fabricating isolated ridge waveguides in 5% magnesium-doped lithium niobate (5% MgO:LN) will be established....

Impurity doping processes in silicon

CERN Document Server

Wang, FFY

1981-01-01

This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

Ultraviolet photoluminescence in Gd-doped silica and phosphosilicate fibers

Directory of Open Access Journals (Sweden)

Y. Wang

2017-04-01

Full Text Available Optical fiber lasers operating in the near infrared and visible spectral regions have relied on the spectroscopic properties of rare earth ions such as Yb3+, Er3+, Tm3+, Nd3+, and Sm3+. Here, we investigate Gd3+ doping in phosphosilicate and pure silica fibers using solution doping and sol-gel techniques, respectively, for potential applications in the ultraviolet. Photoluminescence spectra for optical fiber bundles and fiber preforms were recorded and compared. Emissions at 312 nm (phosphosilicate and 314 nm (pure silica were observed when pumping to the Gd3+ 6DJ, 6IJ, and 6PJ = 5/2, 3/2 energy levels. Oxygen deficient center was observed in solution doping sample with a wide absorption band centered at around 248 nm not affecting pumping to 6IJ states.

Numerical Simulation of a Novel Sensing Approach Based on Abnormal Blocking by Periodic Grating Strips near the Silicon Wire Waveguide

Directory of Open Access Journals (Sweden)

Andrei Tsarev

2018-05-01

Full Text Available This paper discusses the physical nature and the numerical modeling of a novel approach of periodic structures for applications as photonic sensors. The sensing is based on the high sensitivity to the cover index change of the notch wavelength. This sensitivity is due to the effect of abnormal blocking of the guided wave propagating along the silicon wire with periodic strips overhead it through the silica buffer. The structure sensing is numerically modeled by 2D and 3D finite difference time domain (FDTD method, taking into account the waveguide dispersion. The modeling of the long structures (more than 1000 strips is accomplished by the 2D method of lines (MoL with a maximal implementation of the analytical feature of the method. It is proved that the effect of abnormal blocking could be used for the construction of novel types of optical sensors.

Direct Electroplating on Highly Doped Patterned Silicon Wafers

NARCIS (Netherlands)

Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

Doping of silicon by laser-induced diffusion

International Nuclear Information System (INIS)

Pretorius, R.; Allie, M.S.

1986-01-01

This report gives information on the doping of silicon by laser-induced diffusion, modelling and heat-flow calculation, doping from evaporated layers and silicon self-diffusion during pulsed laser irradiation. In order to tailor dopant profiles accurately a knowledge of the heat flow and the melt depths attained as a function of laser energy and material type is crucial. The heat flow calculations described can be used in conjuntion with most diffusion equations in order to predict the redistribution of the deposited dopant which occurs as a result of liquid phase diffusion during the melting period. Doping of Si was carried out by evaporating this films of Sb, In and Bi 10 to 300 A thick, onto the substrates. During pulsed laser irradiation the dopant film and underlying silicon substrate is melted and the dopant incorporated into the crystal lattice during recrystallization. Radioactive 31 Si(T1/2=2,62h) was used as a tracer to measure the self-diffusion of silicon in silicon during pulsed laser (pulsewidth = 30ns, wavelength = 694nm) irradiation

Electric fields in nonhomogeneously doped silicon. Summary of simulations

International Nuclear Information System (INIS)

Kotov, I.V.; Humanic, T.J.; Nouais, D.; Randel, J.; Rashevsky, A.

2006-01-01

Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and s imulation/atlas.html>] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile

Preparation and spectroscopic properties of Yb-doped and Yb-Al-codoped high silica glasses

International Nuclear Information System (INIS)

Qiao Yanbo; Wen Lei; Wu Botao; Ren Jinjun; Chen Danping; Qiu Jianrong

2008-01-01

Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm 2 , respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers

Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

Directory of Open Access Journals (Sweden)

Ashim Dhakal

2017-02-01

Full Text Available Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.

Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

International Nuclear Information System (INIS)

Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

2006-01-01

We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

NARCIS (Netherlands)

Mu, Jinfeng; Sefünç, Mustafa; García Blanco, Sonia Maria

2014-01-01

The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the

Optical nonlinearity enhancement with graphene-decorated silicon waveguides

Science.gov (United States)

Ishizawa, Atsushi; Kou, Rai; Goto, Takahiro; Tsuchizawa, Tai; Matsuda, Nobuyuki; Hitachi, Kenichi; Nishikawa, Tadashi; Yamada, Koji; Sogawa, Tetsuomi; Gotoh, Hideki

2017-04-01

Broadband on-chip optical frequency combs (OFCs) are important for expanding the functionality of photonic integrated circuits. Here, we demonstrate a huge local optical nonlinearity enhancement using graphene. A waveguide is decorated with graphene by precisely manipulating graphene’s area and position. Our approach simultaneously achieves both an extremely efficient supercontinuum and ultra-short pulse generation. With our graphene-decorated silicon waveguide (G-SWG), we have achieved enhanced spectral broadening of femtosecond pump pulses, along with an eightfold increase in the output optical intensity at a wavelength approximately 200 nm shorter than that of the pump pulses. We also found that this huge nonlinearity works as a compressor that effectively compresses pulse width from 80 to 15.7 fs. Our results clearly show the potential for our G-SWG to greatly boost the speed and capacity of future communications with lower power consumption, and our method will further decrease the required pump laser power because it can be applied to decorate various kinds of waveguides with various two-dimensional materials.

Induced transparencies in metamaterial waveguides doped with quantum dots

International Nuclear Information System (INIS)

Singh, Mahi R; Brzozowski, Marek; Racknor, Chris

2015-01-01

The light-mater interaction in quantum dots doped artificial electromagnetic materials such as metamaterial waveguides has been studied. The effect of surface plasmon polaritons (SPPs) on the absorption coefficient of quantum dots in metamaterial waveguides is investigated. The waveguides are made by sandwiching a metamaterial slab between two dielectric material layers. An ensemble of quantum dots are deposited near the waveguide interfaces. The transfer matrix method is used to calculate the SSPs in the waveguide and the density matrix method and Schrödinger equation method are used to calculate the absorption spectrum. It is found that when the thickness of the metamaterial slab is greater than the SPP wavelength the SPP energy is degenerate. However when the thickness of the slab is smaller than that of the SPP wavelength the degeneracy of SPP state splits into odd and even SPP modes due the surface mode interaction (SMI) of the waveguide. We also found that the absorption spectrum has a minima (transparent state) which is due to strong coupling between excitons in quantum dots and SPPs in the waveguide. This transparent state is called the SPP induced transparency. However when the thickness of the slab is smaller than that of the SPP wavelength one transparent state in the absorption spectrum split into two transparent states due to the surface mode interaction. This type of transparency is called the SMI induced transparency. Transparent states can be achieved by applying pulse stress field or an intense laser pulse field. Hence present findings can be used to fabricate the metamaterial optical sensors and switches. (paper)

Effect of silicon, tantalum, and tungsten doping and polarization on bioactivity of hydroxyapatite

Science.gov (United States)

Dhal, Jharana

Hydroxyapatite (HAp) ceramics has important applications as bone graft because of the structural and compositional similarities with bone tissue. However, inferior osteogenic capacity to bone and poor mechanical properties have been identified to be major disadvantages of synthetic HAp compared to the living bone tissue. The objective of the current study is to evaluate the effect of doping with higher valent cations (Tungsten, tantalum, and silicon) and polarization or combination of both on change in property of doped HAp and subsequent impact its bioactivity. In vitro study with human osteoblast cells was used to investigate the influences of doping and polarization on bone cell-materials interactions. The bioactivity of doped HAp was compared with pure HAp. Effect of doping and polarization on the change in HAp was investigated by monitoring change in mineral phases, stored charge, and activation energy of HAp. Activation energy of depolarization was used to explain the possible mechanism of polarization in doped samples. Bioactivity of HAp increased when doped with tantalum and tungsten. Polarization further increased the bioactivity of tungsten- and tantalum-doped samples. Increase in bioactivity on polarized and doped samples was attributed to increase in surface energy and increase in surface wettability. Whereas, an increase in bioactivity on doped unpolarized surface was attributed to change in microstructure. Polarized charge calculated from TSDC indicates that polarized charge decreases on tantalum- and tungsten-doped HAp. The decrease in polarized charge was attributed to the presence of significant amount of different phases that may hinder the ionic motion in doped samples. However, for silicon-doped HAp, TSDC study showed no difference in the mechanism of polarization between doped and undoped samples. Increase in silicon doping decreased the grain size though mechanism is not affected by grain size. Total stored charge decreased with increase in

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

Science.gov (United States)

Nader, Nima; Maser, Daniel L.; Cruz, Flavio C.; Kowligy, Abijith; Timmers, Henry; Chiles, Jeff; Fredrick, Connor; Westly, Daron A.; Nam, Sae Woo; Mirin, Richard P.; Shainline, Jeffrey M.; Diddams, Scott

2018-03-01

Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm-6.2 μm). Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

Directory of Open Access Journals (Sweden)

Nima Nader

2018-03-01

Full Text Available Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm–6.2 μm. Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

Effect of silica particles modified by in-situ and ex-situ methods on the reinforcement of silicone rubber

International Nuclear Information System (INIS)

Song, Yingze; Yu, Jinhong; Dai, Dan; Song, Lixian; Jiang, Nan

2014-01-01

Highlights: • In-situ and ex-situ methods were applied to modify silica particles. • In-situ method was more beneficial to preparing silica particles with high BET surface area. • Silicone rubber filled with in-situ modified silica exhibits excellent mechanical and thermal properties. - Abstract: In-situ and ex-situ methods were applied to modify silica particles in order to investigate their effects on the reinforcement of silicone rubber. Surface area and pore analyzer, laser particle size analyzer, Fourier-transform infrared spectroscopy (FTIR), contact-angle instrument, and transmission electron microscope (TEM) were utilized to investigate the structure and properties of the modified silica particles. Dynamic mechanical thermal analyzer (DMTA) was employed to characterize the vulcanizing behavior and mechanical properties of the composites. Thermogravimetric analysis (TGA) was performed to test the thermal stability of the composites. FTIR and contact angle analysis indicated that silica particles were successfully modified by these two methods. The BET surface area and TEM results reflected that in-situ modification was more beneficial to preparing silica particles with irregular shape and higher BET surface area in comparison with ex-situ modification. The DMTA and TGA data revealed that compared with ex-situ modification, the in-situ modification produced positive influence on the reinforcement of silicone rubber

Ultracompact on-chip photothermal power monitor based on silicon hybrid plasmonic waveguides

Directory of Open Access Journals (Sweden)

Wu Hao

2017-01-01

Full Text Available We propose and demonstrate an ultracompact on-chip photothermal power monitor based on a silicon hybrid plasmonic waveguide (HPWG, which consists of a metal strip, a silicon core, and a silicon oxide (SiO2 insulator layer between them. When light injected to an HPWG is absorbed by the metal strip, the temperature increases and the resistance of the metal strip changes accordingly due to the photothermal and thermal resistance effects of the metal. Therefore, the optical power variation can be monitored by measuring the resistance of the metal strip on the HPWG. To obtain the electrical signal for the resistance measurement conveniently, a Wheatstone bridge circuit is monolithically integrated with the HPWG on the same chip. As the HPWG has nanoscale light confinement, the present power monitor is as short as ~3 μm, which is the smallest photothermal power monitor reported until now. The compactness helps to improve the thermal efficiency and the response speed. For the present power monitor fabricated with simple fabrication processes, the measured responsivity is as high as about 17.7 mV/mW at a bias voltage of 2 V and the power dynamic range is as large as 35 dB.

Superlattice doped layers for amorphous silicon photovoltaic cells

Science.gov (United States)

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Process development for waveguide chemical sensors with integrated polymeric sensitive layers

Science.gov (United States)

Amberkar, Raghu; Gao, Zhan; Park, Jongwon; Henthorn, David B.; Kim, Chang-Soo

2008-02-01

Due to the proper optical property and flexibility in the process development, an epoxy-based, high-aspect ratio photoresist SU-8 is now attracting attention in optical sensing applications. Manipulation of the surface properties of SU-8 waveguides is critical to attach functional films such as chemically-sensitive layers. We describe a new integration process to immobilize fluorescence molecules on SU-8 waveguide surface for application to intensity-based optical chemical sensors. We use two polymers for this application. Spin-on, hydrophobic, photopatternable silicone is a convenient material to contain fluorophore molecules and to pattern a photolithographically defined thin layer on the surface of SU-8. We use fumed silica powders as an additive to uniformly disperse the fluorophores in the silicone precursor. In general, additional processes are not critically required to promote the adhesion between the SU-8 and silicone. The other material is polyethylene glycol diacrylate (PEGDA). Recently we demonstrated a novel photografting method to modify the surface of SU-8 using a surface bound initiator to control its wettability. The activated surface is then coated with a monomer precursor solution. Polymerization follows when the sample is exposed to UV irradiation, resulting in a grafted PEGDA layer incorporating fluorophores within the hydrogel matrix. Since this method is based the UV-based photografting reaction, it is possible to grow off photolithographically defined hydrogel patterns on the waveguide structures. The resulting films will be viable integrated components in optical bioanalytical sensors. This is a promising technique for integrated chemical sensors both for planar type waveguide and vertical type waveguide chemical sensors.

Antimicrobial activity of silica coated silicon nano-tubes (SCSNT) and silica coated silicon nano-particles (SCSNP) synthesized by gas phase condensation.

Science.gov (United States)

Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L

2013-06-01

Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).

Extremely small polarization beam splitter based on a multimode interference coupler with a silicon hybrid plasmonic waveguide.

Science.gov (United States)

Guan, Xiaowei; Wu, Hao; Shi, Yaocheng; Dai, Daoxin

2014-01-15

A novel polarization beam splitter (PBS) with an extremely small footprint is proposed based on a multimode interference (MMI) coupler with a silicon hybrid plasmonic waveguide. The MMI section, covered with a metal strip partially, is designed to achieve mirror imaging for TE polarization. On the other hand, for TM polarization, there is almost no MMI effect since the higher-order TM modes are hardly excited due to the hybrid plasmonic effect. With this design, the whole PBS including the 1.1 μm long MMI section as well as the output section has a footprint as small as ∼1.8 μm×2.5 μm. Besides, the fabrication process is simple since the waveguide dimension is relatively large (e.g., the input/output waveguides widths w ≥300 nm and the MMI width w(MMI)=800 nm). Numerical simulations show that the designed PBS has a broad band of ∼80 nm for an ER >10 dB as well as a large fabrication tolerance to allow a silicon core width variation of -30 nm<Δw<50 nm and a metal strip width variation of -200 nm<Δw(m)<0.

Electric fields in nonhomogeneously doped silicon. Summary of simulations

Energy Technology Data Exchange (ETDEWEB)

Kotov, I.V. [Ohio State University, Columbus, OH 43210 (United States)]. E-mail: kotov@mps.ohio-state.edu; Humanic, T.J. [Ohio State University, Columbus, OH 43210 (United States); Nouais, D. [INFN, Sezione di Torino, I-10125 Turin (Italy); Randel, J. [Ohio State University, Columbus, OH 43210 (United States); Rashevsky, A. [INFN, Sezione di Triste, I-34127 Trieste (Italy)

2006-11-30

Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and ] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile.

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

International Nuclear Information System (INIS)

Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

2006-01-01

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

Praseodymium ion doped phosphate glasses for integrated broadband ion-exchanged waveguide amplifier

Energy Technology Data Exchange (ETDEWEB)

Shen, L.F. [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Chen, B.J. [Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Lin, H., E-mail: lhai8686@yahoo.com [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Pun, E.Y.B. [Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

2015-02-15

Highlights: • Effective near-infrared emission (1380-1525 nm) is observed in Pr{sup 3+}-doped phosphate glasses. • Effective bandwidth of {sup 1}D{sub 2} → {sup 1}G{sub 4} transition emission is obtained to be 124 nm. • Channel waveguides have been fabricated by K{sup +}-Na{sup +} ion-exchange method. • Pr{sup 3+}-doped phosphate glasses are promising in developing integrated broadband waveguide amplifier. - Abstract: Effective near-infrared emission covering the fifth optical telecommunication window (1380-1525 nm) has been observed in Pr{sup 3+}-doped phosphate (NMAP) glasses. Judd-Ofelt parameters Ω{sub 2} (6.38 × 10{sup −20} cm{sup 2}), Ω{sub 4} (20.30 × 10{sup −20} cm{sup 2}) and Ω{sub 6} (0.40 × 10{sup −20} cm{sup 2}) indicate a high inversion asymmetrical and strong covalent environment in the optical glasses. The effective bandwidth (Δλ{sub eff}) of the corresponding {sup 1}D{sub 2} → {sup 1}G{sub 4} transition emission is obtained to be 124 nm, and the maximum stimulated emission cross-section (σ{sub em-max}) at 1468 nm is derived to be 1.14 × 10{sup −20} cm{sup 2}. Channel waveguide was fabricated successfully by K{sup +}-Na{sup +} ion-exchange method with mode field diameter of 8.8 μm in the horizontal direction and 6.7 μm in the vertical direction. Broad effective bandwidth, large emission cross-section and perfect thermal ion-exchangeability indicate that Pr{sup 3+}-doped NMAP phosphate glasses are promising in developing integrated broadband waveguide amplifier, especially operating at E- and S-bands which belong to the fifth optical telecommunication window.

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

Science.gov (United States)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Dynamic Moisture Sorption and Desorption in Fumed Silica-filled Silicone Foam

Energy Technology Data Exchange (ETDEWEB)

Trautschold, Olivia Carol [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-09-02

Characterizing dynamic moisture sorption and desorption in fumed silica-filled silicone foam is necessary for determining material compatibilities and life predictions, particularly in sealed environments that may be exposed to a range of environmental conditions. Thermogravimetric analysis (TGA) and near infrared spectroscopy (NIR) were performed on S5470 fumed silica-filled silicone foam to determine the weight percent of moisture at saturation. Additionally, TGA was used to determine the time, temperature, and relative humidity levels required for sorption and desorption of physisorbed moisture in S5470.

Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

International Nuclear Information System (INIS)

Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

2010-01-01

Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

Extrinsic doping in silicon revisited

KAUST Repository

Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

2010-01-01

Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

Extrinsic doping in silicon revisited

KAUST Repository

Schwingenschlögl, Udo

2010-06-17

Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

Study and realisation of plane optical waveguides in amorphous silica by ion implantation

International Nuclear Information System (INIS)

Moutonnet, Danielle

1974-01-01

Within the framework of the replacement of radio-electric waves by light waves as support of information transmission in telecommunications, this research thesis addresses the use of ion implantation for the development of small waveguides with low losses. The author first describes how such waveguides can be characterised by studying the propagation of an electromagnetic wave in a plane waveguide, and the different ways to introduce energy in these waveguides. Then, she discusses how the obtained results can be used to determine the main parameters of an optical waveguide, or more generally of a thin transparent layer for a chosen wavelength. In the second part, the author reports the application of this general method to the case of guides obtained by ion implantation. She notably identifies the possibilities of ion implantation as technological tool to develop waveguides, and discusses how the performed experiments allow a better understanding of physical mechanisms occurring during implantation. In this second part, she recalls generally admitted theories about ion implantation, describes experiment principles (implantation of oxygen or nitrogen ions into amorphous silica followed by annealing) and discusses the obtained results (increase of the refraction index, i.e. of the guiding effect, stronger for oxygen than for nitrogen) [fr

Ultrashort optical waveguide excitations in uniaxial silica fibers: elastic collision scenarios.

Science.gov (United States)

Kuetche, Victor K; Youssoufa, Saliou; Kofane, Timoleon C

2014-12-01

In this work, we investigate the dynamics of an uniaxial silica fiber under the viewpoint of propagation of ultimately ultrashort optical waveguide channels. As a result, we unveil the existence of three typical kinds of ultrabroadband excitations whose profiles strongly depend upon their angular momenta. Looking forward to surveying their scattering features, we unearth some underlying head-on scenarios of elastic collisions. Accordingly, we address some useful and straightforward applications in nonlinear optics through secured data transmission systems, as well as laser physics and soliton theory with optical soliton dynamics.

Silicon Conversion From Bamboo Leaf Silica By Magnesiothermic Reduction for Development of Li-ion Baterry Anode

Directory of Open Access Journals (Sweden)

Silviana Silviana

2018-01-01

Full Text Available Silicon (Si is a promising alternative material for the anode Lithium ion Battery (LIB. Si has a large theoretical capacity about 3579 mA hg-1, ten times greater than the commercial graphite anode (372 mA hg-1. Bamboo is a source of organic silica (bio-silica. Most part biogenetic content of SiO2 is obtained in bamboo leaves. This paper aims to investigate the synthesis nano Si from bamboo leaves through magnesiothermic reduction after silica extraction using sol–gel method and to observe nano Si of bamboo leaf as mixed material for lithium ion baterry. Silica and silicon content was determined using XRF. Silica product has 96,3 wt. % yield of extraction from bamboo leaf, while silicon yield was obtained 61.2 wt. %. The XRD pattern revealed that silica and silicon product were amourphous. The extracted silica and silicon from bambo leaf has spherical shape and agglomerated form. As anoda material for LIB, silicon product achieved 0,002 mAh capacity for 22 cycle.

Photo darkening of rare earth doped silica

DEFF Research Database (Denmark)

Mattsson, Kent Erik

2011-01-01

/2/11/2 chemical bond is formed on dioxasilirane which comprises the PD color center for the visible and near-infrared. Difference in solid acidity of the silica material co-doped with Yb/Al and Yb/P may explain the observed difference in spectral shapes by change of bond order to the formed chemical bond. © 2011...

All-silicon thermal independent Mach-Zehnder interferometer with multimode waveguides

DEFF Research Database (Denmark)

Guan, Xiaowei; Frandsen, Lars Hagedorn

2016-01-01

A novel all-silicon thermal independent Mach-Zehnder interferometer consisting of two multimode waveguide arms having equal lengths and widths but transmitting different modes is proposed and experimentally demonstrated. The interferometer has a temperature sensitivity smaller than 8pm/°C in a wa...

High-Q energy trapping of temperature-stable shear waves with Lamé cross-sectional polarization in a single crystal silicon waveguide

Science.gov (United States)

Tabrizian, R.; Daruwalla, A.; Ayazi, F.

2016-03-01

A multi-port electrostatically driven silicon acoustic cavity is implemented that efficiently traps the energy of a temperature-stable eigen-mode with Lamé cross-sectional polarization. Dispersive behavior of propagating and evanescent guided waves in a ⟨100⟩-aligned single crystal silicon waveguide is used to engineer the acoustic energy distribution of a specific shear eigen-mode that is well known for its low temperature sensitivity when implemented in doped single crystal silicon. Such an acoustic energy trapping in the central region of the acoustic cavity geometry and far from substrate obviates the need for narrow tethers that are conventionally used for non-destructive and high quality factor (Q) energy suspension in MEMS resonators; therefore, the acoustically engineered waveguide can simultaneously serve as in-situ self-oven by passing large uniformly distributed DC currents through its body and without any concern about perturbing the mode shape or deforming narrow supports. Such a stable thermo-structural performance besides large turnover temperatures than can be realized in Lamé eigen-modes make this device suitable for implementation of ultra-stable oven-controlled oscillators. 78 MHz prototypes implemented in arsenic-doped single crystal silicon substrates with different resistivity are transduced by in- and out-of-plane narrow-gap capacitive ports, showing high Q of ˜43k. The low resistivity device shows an overall temperature-induced frequency drift of 200 ppm over the range of -20 °C to 80 °C, which is ˜15× smaller compared to overall frequency drift measured for the similar yet high resistivity device in the same temperature range. Furthermore, a frequency tuning of ˜2100 ppm is achieved in high resistivity device by passing 45 mA DC current through its body. Continuous operation of the device under such a self-ovenizing current over 10 days did not induce frequency instability or degradation in Q.

Doping of silicon carbide by ion implantation

International Nuclear Information System (INIS)

Gimbert, J.

1999-01-01

It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

Experimental investigations of optical nonlinearities in semiconductor-doped glass waveguides

International Nuclear Information System (INIS)

Dannberg, P.; Possner, T.; Braeuer, A.; Bartuch, U.

1988-01-01

Both, thermal and electronic optical nonlinearities are studied in semiconductor-doped glass (SDG) waveguides which are fabricated in commercially available sharp-cut filters by Cs + -K + ion exchange. The relaxation time in photodarkened substrates is measured to be 30 ps. By means of a prism coupling set-up the saturation value of the nonlinear index change is determined. Furthermore, a high stability dual-beam interferometer is presented for the measurement of both, thermal and electronic nonlinear refractive index n 2 in planar waveguides. Conclusions about the application of SDG to opto-optical switching are given. (author)

Modelling of a DBR laser based on Raman effect in a silicon-on-insulator rib waveguide

International Nuclear Information System (INIS)

De Leonardis, Francesco; Dimastrodonato, Valeria; Passaro, Vittorio M N

2008-01-01

In this paper, third-order nonlinearities in silicon-on-insulator rib waveguides are investigated to obtain complete modelling, describing the behaviour of a stimulated Raman scattering based laser. The simulations of a distributed Bragg reflector laser operation in a time domain allow for the first time to study in detail the dependence of threshold and output powers on different device parameters. Both continuous wave and pulsed laser operations are theoretically demonstrated, as well as their dependence on device parameters

Optical properties of ion beam modified waveguide materials doped with erbium and silver

NARCIS (Netherlands)

Strohhöfer, C. (Christof)

2001-01-01

In the first part of this thesis we investigate codoping of erbium-doped waveguide materials with different ions in order to increase the efficiency of erbium-doped optical amplifiers. Codoping with ytterbium can overcome the limitations due to the small absorption cross section of Er3+ in Al2O3 at

Suppression of irradiation effects in gold-doped silicon detectors

International Nuclear Information System (INIS)

McPherson, M.; Sloan, T.; Jones, B.K.

1997-01-01

Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

Superconductivity in heavily boron-doped silicon carbide

Directory of Open Access Journals (Sweden)

Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

2008-01-01

Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Silicon isotope fractionation during silica precipitation from hot-spring waters

Science.gov (United States)

Geilert, Sonja; Vroon, Pieter; Keller, Nicole; Gudbrnadsson, Snorri; Stefánsson, Andri; van Bergen, Manfred

2014-05-01

Hot-spring systems in the Geysir geothermal area, Iceland, have been studied to explore silicon isotope fractionation in a natural setting where sinter deposits are actively formed over a temperature interval between 20° and 100° C. The SiO2(aq)concentrations in spring and stream waters range between 290 and 560ppm and stay relatively constant along downstream trajectories, irrespective of significant cooling gradients. The waters are predominantly oversaturated in amorphous silica at the temperatures measured in the field. Correlations between the saturation indices, temperature and amounts of evaporative water loss suggest that cooling and evaporation are the main causes of subaqueous silica precipitation. The δ30Si values of dissolved silica in spring water and outflowing streams average around +1o probably due to the small quantities of instantaneously precipitating silica relative to the dissolved amount. Siliceous sinters, in contrast, range between -0.1o to -4.0o consistent with a preferred incorporation of the light silicon isotope and with values for precipitated silica becoming more negative with downstream decreasing temperatures. Larger fractionation magnitudes are inversely correlated with the precipitation rate, which itself is dependent on temperature, saturation state and the extent of a system. The resulting magnitudes of solid-fluid isotopic fractionation generally decline from -3.5o at 10° C to -2.0o at 90° C. These values confirm a similar relationship between fractionation magnitude and temperature that we found in laboratory-controlled silica-precipitation experiments. However, a relatively constant offset of ca. -2.9o between field and experimental fractionation values indicates that temperature alone cannot be responsible for the observed shifts. We infer that precipitation kinetics are a prominent control of silicon isotope fractionation in aqueous environments, whereby the influence of the extent of the system on the precipitation

Characterization of Metal-Doped Methylated Microporous Silica for Molecular Separations

DEFF Research Database (Denmark)

El-Feky, Hany Hassan; Briceno, Kelly; Szalata, Kamila

2015-01-01

Novel silica xerogels are prepared and developed by sol-gel method in the present study. The preparation involves cobalt-doping within the organic templated silica matrices, where methyltriethoxysilane (MTES), which contains methyl groups as a covalently bonded organic template is used. The synth...

THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order susceptibility χ((2)).

Science.gov (United States)

Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka

2014-07-14

Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si(3)N(4) straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ((2)) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by .using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications.

White upconversion luminescence in Tm3+/Ho3+/Yb3+ triply doped K+-Na+ ion-exchanged aluminum germanate glass channel waveguide

Science.gov (United States)

Liu, Xiao; Chen, Baojie; Pun, Edwin Yue Bun; Lin, Hai

2013-01-01

Rare-earth ions doped K+-Na+ ion-exchanged aluminum germanate (NMAG) glass channel waveguides have been designed and fabricated. Under 980 nm laser pumping, an intense upconversion white light transmission trace was observed in Tm3+/Ho3+/Yb3+ triply doped NMAG glass channel waveguide and a high-brightness light spot was achieved from the output end of the fiber connected to the waveguide channel. The fluorescent colors were diverse and located within or near the white region in CIE chromaticity diagram under various pumping powers. These admirable results indicate that Tm3+/Ho3+/Yb3+ triply doped NMAG channel waveguide is a promising light source for medical and high-precision processing illumination.

Design Parameter Optimization of a Silicon-Based Grating Waveguide for Performance Improvement in Biochemical Sensor Application.

Science.gov (United States)

Hong, Yoo-Seung; Cho, Chun-Hyung; Sung, Hyuk-Kee

2018-03-05

We performed numerical analysis and design parameter optimization of a silicon-based grating waveguide refractive index (RI) sensor. The performance of the grating waveguide RI sensor was determined by the full-width at half-maximum (FWHM) and the shift in the resonance wavelength in the transmission spectrum. The transmission extinction, a major figure-of-merit of an RI sensor that reflects both FWHM and resonance shift performance, could be significantly improved by the proper determination of three major grating waveguide parameters: duty ratio, grating period, and etching depth. We analyzed the transmission characteristics of the grating waveguide under various design parameter conditions using a finite-difference time domain method. We achieved a transmission extinction improvement of >26 dB under a given bioenvironmental target change by the proper choice of the design procedure and parameters. This design procedure and choice of appropriate parameters would enable the widespread application of silicon-based grating waveguide in high-performance RI biochemical sensor.

Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

Science.gov (United States)

Papes, Martin; Cheben, Pavel; Benedikovic, Daniel; Schmid, Jens H; Pond, James; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, Gonzalo; Ye, Winnie N; Xu, Dan-Xia; Janz, Siegfried; Dado, Milan; Vašinek, Vladimír

2016-03-07

Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO 2 upper cladding thin high-index Si 3 N 4 layers. The Si 3 N 4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass for waveguide amplifier application

International Nuclear Information System (INIS)

Zhao Shilong; Wang Xiuli; Fang Dawei; Xu Shiqing; Hu Lili

2006-01-01

Tungsten-tellurite glass with molar composition of 60TeO 2 -30WO 3 -10Na 2 O has been investigated for developing planar broadband waveguide amplifier application. Spectroscopic properties and thermal stability of Er 3+ -doped tungsten-tellurite glass have been discussed. The results show that the introduction of WO 3 increases significantly the glass transition temperature and the maximum phonon energy. Er 3+ -doped tungsten-tellurite glass exhibits high glass transition temperature (377 deg. C), large emission cross-section (0.91 x 10 -20 cm 2 ) at 1532 nm and broad full width at half maximum (FWHM), which make it preferable for broadband Er 3+ -doped waveguide amplifier application

Electrophysical properties of silicon doped by palladium-103 isotope

International Nuclear Information System (INIS)

Makhkamov, Sh.; Tursunov, N.A.; Sattiev, A.R.; Normurodov, A.B.

2007-01-01

The work is devoted to study of radiation physical processes taking place in Si under nuclear transmutation, Identification and determination of defects microstructure and homogeneities and their distribution, study of interactions of nuclear-transformed phosphorus isotopes with palladium atoms, and its effect on crystal properties. For examination monocrystalline silicon of n- and p-type conductivity with specific resistance from 1 to 40 Ω·cm, dislocation density ∼10 4 cm -2 and oxygen content ∼10 17 cm -3 has been applied. Doping of silicon plates by examined admixture has been carried out by thermal diffusion method within temperature range 1000-1250 deg. C for 0.5- 5 h. Irradiation of doped silicon was conducted by reactor neutron fluences 5·10 18 - 5·10 19 cm -2 with subsequent annealing at 1000 deg. C for 30 min. Efficiency of mixture centers formation in silicon, effect of concentration of formed mixture-defect centers on electro-physical, photoelectric and recombination parameters of doped silicon and revealing of type and state of generated defects have been controlled by electric, volume and X-ray fluorescent methods. On the base of spectroscopic researches it is shown, that in silicon forbidden zone after Pd diffusion in DLTS spectra peaks related with acceptor (E c -0.18 and E v +0.34 eV) levels, and peak responsible for level E v +0.32 eV of donor character caused by palladium impurity. It is shown, that irradiation of doped silicon samples by neutrons lead to nuclear transmutation of 102 Pd, 104 Pd in 103 Pd isotopes in the crystal volume with following electron capture in stable isotope 103m Rh

Structural and luminescence properties of europium(III)-doped zirconium carbonates and silica-supported Eu3+-doped zirconium carbonate nanoparticles

International Nuclear Information System (INIS)

Sivestrini, S.; Riello, P.; Freris, I.; Cristofori, D.; Enrichi, F.; Benedetti, A.

2010-01-01

The synthesis, morphology and luminescence properties of europium(III)-doped zirconium carbonates prepared as bulk materials and as silica-supported nanoparticles with differing calcination treatments are reported. Transmission electron microscopy and X-ray diffraction analyses have, respectively, been used to study the morphology and to quantify the atomic amount of europium present in the optically active phases of the variously prepared nanomaterials. Rietveld analysis was used to quantify the constituting phases and to determinate the europium content. Silica particles with an approximate size of 30 nm were coated with 2 nm carbonate nanoparticles, prepared in situ on the surface of the silica core. Luminescence measurements revealed the role of different preparation methods and of europium-doping quantities on the optical properties observed.

Tunable Bandgap Opening in the Proposed Structure of Silicon Doped Graphene

OpenAIRE

Azadeh, Mohammad S. Sharif; Kokabi, Alireza; Hosseini, Mehdi; Fardmanesh, Mehdi

2011-01-01

A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation for different silicon sites in the host graphene, the effect of silicon concentration and unit cell geometry on the bandgap of the proposed structure is also investigated. Chemically silicon doped graphene results in an energy gap as large as 2eV according t...

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

Directory of Open Access Journals (Sweden)

Yanping Yuan

2016-02-01

Full Text Available In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2 is used to irradiate multi-walled carbon nanotubes (MWCNTs on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM. For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation.

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

Science.gov (United States)

Yuan, Yanping; Chen, Jimin

2016-01-01

In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2) is used to irradiate multi-walled carbon nanotubes (MWCNTs) on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM). For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation. PMID:28344293

p-type doping by platinum diffusion in low phosphorus doped silicon

Science.gov (United States)

Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

2003-07-01

In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

Erbium doped stain etched porous silicon

International Nuclear Information System (INIS)

Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

2008-01-01

In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

Waveguide cores containing silicon nanocrystals as active spectral filters for silicon-based photonics

Czech Academy of Sciences Publication Activity Database

Pelant, Ivan; Ostatnický, T.; Valenta, J.; Luterová, Kateřina; Skopalová, Eva; Mates, Tomáš; Elliman, R. G.

2006-01-01

Roč. 83, - (2006), s. 87-91 ISSN 0946-2171 R&D Projects: GA ČR(CZ) GA202/03/0789; GA ČR(CZ) GP202/01/D030; GA AV ČR(CZ) IAA1010316; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * planar waveguides * leaky modes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.023, year: 2006

Neutron transmutation doping of polycrystalline silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

1976-04-01

Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

Lasing in silicon–organic hybrid waveguides

Science.gov (United States)

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

a Study of Oxygen Precipitation in Heavily Doped Silicon.

Science.gov (United States)

Graupner, Robert Kurt

Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

International Nuclear Information System (INIS)

Geyer, Nadine; Wollschläger, Nicole; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Fuhrmann, Bodo; Leipner, Hartmut S; Jungmann, Marco; Krause-Rehberg, Reinhard

2015-01-01

A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H_2O_2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology. (paper)

Silica encapsulation of luminescent silicon nanoparticles: stable and biocompatible nanohybrids

Energy Technology Data Exchange (ETDEWEB)

Maurice, Vincent [CEA Saclay, DSM/IRAMIS/SPAM-LFP (France); Rivolta, Ilaria [University of Milano-Bicocca, Department of Experimental Medicine (DIMS) (Italy); Vincent, Julien [CEA Saclay, DSM/IRAMIS/SPAM-LFP (France); Raccurt, Olivier [CEA Grenoble, Department of Nano Materials, NanoChemistry and NanoSafety Laboratory (DRT/LITEN/DTNM/LCSN) (France); Rouzaud, Jean-Noel [Ecole Normale superieure de Paris, Laboratoire de Geologie (France); Miserrochi, Giuseppe [University of Milano-Bicocca, Department of Experimental Medicine (DIMS) (Italy); Doris, Eric [CEA, Service de Chimie Bioorganique et de Marquage, iBiTecS (France); Reynaud, Cecile; Herlin-Boime, Nathalie, E-mail: nathalie.herlin@cea.fr [CEA Saclay, DSM/IRAMIS/SPAM-LFP (France)

2012-02-15

This article presents a process for surface coating and functionalization of luminescent silicon nanoparticles. The particles were coated with silica using a microemulsion process that was adapted to the fragile silicon nanoparticles. The as-produced core-shell particles have a mean diameter of 35 nm and exhibit the intrinsic photoluminescence of the silicon core. The silica layer protects the core from aqueous oxidation for several days, thus allowing the use of the nanoparticles for biological applications. The nanoparticles were further coated with amines and functionalized with polyethylene glycol chains and the toxicity of the particles has been evaluated at the different stages of the process. The core-shell nanoparticles exhibit no acute toxicity towards lung cells, which is promising for further development.

Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

Science.gov (United States)

Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

2014-03-01

Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

International Nuclear Information System (INIS)

Bonneau, D; Engin, E; O'Brien, J L; Thompson, M G; Ohira, K; Suzuki, N; Yoshida, H; Iizuka, N; Ezaki, M; Natarajan, C M; Tanner, M G; Hadfield, R H; Dorenbos, S N; Zwiller, V

2012-01-01

Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilizing the silicon-on-insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and the manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform. (paper)

Phosphorous Doping of Nanostructured Crystalline Silicon

DEFF Research Database (Denmark)

Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Steckel, André

Nano-textured silicon, known as black silicon (bSi), is attractive with excellent photon trapping properties. bSi can be produced using simple one-step fabrication reactive ion etching (RIE) technique. However, in order to use bSi in photovoltaics doping process should be developed. Due to high s...

Effect of silver nanoparticles on the dielectric properties of holmium doped silica glass

International Nuclear Information System (INIS)

Rejikumar, P.R.; Jyothy, P.V.; Mathew, Siby; Thomas, Vinoy; Unnikrishnan, N.V.

2010-01-01

The effect of silver nanoparticle co-doping on the dielectric properties of holmium doped silica glasses was studied. Silver nanoparticles of size between 20 and 22 nm were produced by the sol-gel technique. One of the samples showed an icosahedral morphology of the nanocrystal formed, along with spherical morphology. It was found that the tuning of the dielectric constant values could be accomplished by co-doping. The sample, with 1 wt% of Ho, had low dielectric constant values within the range 100 Hz-3 MHz due to the formation of quasi-molecular structures of holmium. This effect was evaded to some extent with silver co-doping as a result of the interdispersion of holmium complexes. Also it was found that the co-doping produced a higher dielectric loss which was calculated from the tan δ-log f graph. The Cole-Cole parameters and the Jonscher power law parameters were also calculated and are presented.

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

Science.gov (United States)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

Science.gov (United States)

Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

2008-04-01

We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

Amplified Spontaneous Emission of Organic Pyridinium Dye doped Polymeric Waveguide

International Nuclear Information System (INIS)

Jun, Xi; Li-Hua, Ye; Qiong, Wang; Deng, Xu; Chang-Gui, Lu; Guo-Hua, Hu; Yi-Ping, Cui

2009-01-01

An organic dye salt trans-4-[p-(N-hydroxyethyl-N-methylamino)styryl]-N-methylpyridinium iodide (ASPI) is doped with an electron transport organic molecule tris(8-hydroxyquinoline) aluminium (Alq3) in a host matrix of poly(methylmethacrylate) (PMMA), and the amplified spontaneous emission (ASE) is studied. By efficient Forster energy transfer from Alq3 to ASPI, it is demonstrated that the ASE threshold of ASPI:Alq3:PMMA waveguide (about 11μJ/pulse) is much lower than that of ASPI:PMMA system (about 38μJ/pulse). Meanwhile, the peak position of ASE can be controlled by the effect of film thickness on waveguide modes. We show that the ASE peak position can be tuned over 37nm. These characteristics indicate the ASPI:Alq3 system as a promising gain medium for optical amplifiers and organic semiconductor lasers

Summary of radiation-induced transient absorption and recovery in fiber optic waveguides

International Nuclear Information System (INIS)

Skoog, C.D.

1976-11-01

The absorption induced in fiber optic waveguides by pulsed electron and X-ray radiation has been measured as a function of optical wavelength from 450 to 950 nm, irradiation temperature from -54 to 71 0 C, and dose from 1 to 500 krads. The fibers studied are Ge-doped silica core fibers (Corning Low Loss), ''pure'' vitreous silica core fibers (Schott, Bell Laboratories, Fiberoptic Cable Corp., and Valtec Fiberoptics), polymethyl-methacrylate core fibers (DuPont CROFON and PFX), and polystyrene core fibers (International Fiber Optics and Polyoptics). Models that have been developed to account for the observed absorption recovery are also summarized

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon-Gallium-Nitride Slot Waveguide Structures.

Science.gov (United States)

Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev

2016-06-25

In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)-gallium nitride (GaN) slot waveguide structure is presented-to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530-1565 nm) into four output ports with low insertion losses (0.07 dB).

Growth and characterization of heavily doped silicon crystals

Energy Technology Data Exchange (ETDEWEB)

Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

2011-08-15

Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Impact of changes in river fluxes of silica on the global marine silicon cycle: a model comparison

Directory of Open Access Journals (Sweden)

C. Y. Bernard

2010-02-01

Full Text Available The availability of dissolved silica (Si in the ocean provides a major control on the growth of siliceous phytoplankton. Diatoms in particular account for a large proportion of oceanic primary production. The original source of the silica is rock weathering, followed by transport of dissolved and biogenic silica to the coastal zone. This model study aims at assessing the sensitivity of the global marine silicon cycle to variations in the river input of silica on timescales ranging from several centuries to millennia. We compare the performance of a box model for the marine silicon cycle to that of a global biogeochemical ocean general circulation model (HAMOCC2 and 5. Results indicate that the average global ocean response to changes in river input of silica is comparable in the models on time scales up to 150 kyrs. While the trends in export production and opal burial are the same, the box model shows a delayed response to the imposed perturbations compared to the general circulation model. Results of both models confirm the important role of the continental margins as a sink for silica at the global scale. Our work also demonstrates that the effects of changes in riverine dissolved silica on ocean biogeochemistry depend on the availability of the other nutrients such as nitrogen, phosphorus and iron. The model results suggest that the effects of reduced silica inputs due to river damming are particularly pronounced in the Gulf of Bengal, Gulf of Mexico and the Amazon plume where they negatively affect opal production. While general circulation models are indispensable when assessing the spatial variation in opal export production and biogenic Si burial in the ocean, this study demonstrates that box models provide a good alternative when studying the average global ocean response to perturbations of the oceanic silica cycle (especially on longer time scales.

Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Directory of Open Access Journals (Sweden)

Konstantinos Pantzas

2015-10-01

Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

Science.gov (United States)

Han, Young-Joon; Franklin, Evan; Fell, Andreas; Ernst, Marco; Nguyen, Hieu T.; Macdonald, Daniel

2016-04-01

Low-temperature micro-photoluminescence spectroscopy (μ-PLS) is applied to investigate shallow layers of laser-processed silicon for solar cell applications. Micron-scale measurement (with spatial resolution down to 1 μm) enables investigation of the fundamental impact of laser processing on the electronic properties of silicon as a function of position within the laser-processed region, and in particular at specific positions such as at the boundary/edge of processed and unprocessed regions. Low-temperature μ-PLS enables qualitative analysis of laser-processed regions by identifying PLS signals corresponding to both laser-induced doping and laser-induced damage. We show that the position of particular luminescence peaks can be attributed to band-gap narrowing corresponding to different levels of subsurface laser doping, which is achieved via multiple 248 nm nanosecond excimer laser pulses with fluences in the range 1.5-4 J/cm2 and using commercially available boron-rich spin-on-dopant precursor films. We demonstrate that characteristic defect PL spectra can be observed subsequent to laser doping, providing evidence of laser-induced crystal damage. The impact of laser parameters such as fluence and number of repeat pulses on laser-induced damage is also analyzed by observing the relative level of defect PL spectra and absolute luminescence intensity. Luminescence owing to laser-induced damage is observed to be considerably larger at the boundaries of laser-doped regions than at the centers, highlighting the significant role of the edges of laser-doped region on laser doping quality. Furthermore, by comparing the damage signal observed after laser processing of two different substrate surface conditions (chemically-mechanically polished and tetramethylammonium hydroxide etched), we show that wafer preparation can be an important factor impacting the quality of laser-processed silicon and solar cells.

Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

2016-11-30

Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

Chalcogen doping of silicon via intense femtosecond-laser irradiation

International Nuclear Information System (INIS)

Sheehy, Michael A.; Tull, Brian R.; Friend, Cynthia M.; Mazur, Eric

2007-01-01

We have previously shown that doping silicon with sulfur via femtosecond-laser irradiation leads to near-unity absorption of radiation from ultraviolet wavelengths to below band gap short-wave infrared wavelengths. Here, we demonstrate that doping silicon with two other group VI elements (chalcogens), selenium and tellurium, also leads to near-unity broadband absorption. A powder of the chalcogen dopant is spread on the silicon substrate and irradiated with femtosecond-laser pulses. We examine and compare the resulting morphology, optical properties, and chemical composition for each chalcogen-doped substrate before and after thermal annealing. Thermal annealing reduces the absorption of below band gap radiation by an amount that correlates with the diffusivity of the chalcogen dopant used to make the sample. We propose a mechanism for the absorption of below band gap radiation based on defects in the lattice brought about by the femtosecond-laser irradiation and the presence of a supersaturated concentration of chalcogen dopant atoms. The selenium and tellurium doped samples show particular promise for use in infrared photodetectors as they retain most of their infrared absorptance even after thermal annealing-a necessary step in many semiconductor device manufacturing processes

One-to-six WDM multicasting of DPSK signals based on dual-pump four-wave mixing in a silicon waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Ji, Hua

2011-01-01

We present WDM multicasting based on dual-pump four-wave mixing in a 3-mm long dispersion engineered silicon waveguide. One-to-six phase-preserving WDM multicasting of 10-Gb/s differential phase-shiftkeying (DPSK) data is experimentally demonstrated with bit-error rate measurements. All the six...

Cross two photon absorption in a silicon photonic crystal waveguide fiber taper coupler with a physical junction

Energy Technology Data Exchange (ETDEWEB)

Sarkissian, Raymond, E-mail: RaymondSark@gmail.com; O' Brien, John [Electrophysics department, University of Southern California, Los Angeles, California 90089 (United States)

2015-01-21

Cross two photon absorption in silicon is characterized using a tapered fiber photonic crystal silicon waveguide coupler. There is a physical junction between the tapered fiber and the waveguide constituting a stand-alone device. This device is used to obtain the spectrum for cross two photon absorption coefficient per unit volume of interaction between photons of nondegenerate energy. The corresponding Kerr coefficient per unit volume of interaction is also experimentally extracted. The thermal resistance of the device is also experimentally determined and the response time of the device is estimated for on-chip all-optical signal processing and data transfer between optical signals of different photon energies.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

International Nuclear Information System (INIS)

Tan Yang; Chen Feng; Hu Lili; Xing Pengfei; Chen Yanxue; Wang Xuelin; Wang Keming

2007-01-01

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er 3+ /Yb 3+ co-doped phosphate glass. The He + ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar + ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er 3+ /Yb 3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Energy Technology Data Exchange (ETDEWEB)

Girard, A.; Coulon, N. [UMR-CNRS 6164, Institut d’Electronique et de Télécommunications de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France); Cardinaud, C. [UMR-CNRS 6502, Institut des Matériaux Jean Rouxel, Université de Nantes, 2 rue de la Houssinière, BP32229, F-44322 Nantes cedex 3 (France); Mohammed-Brahim, T. [UMR-CNRS 6164, Institut d’Electronique et de Télécommunications de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France); Geneste, F., E-mail: Florence.Geneste@univ-rennes1.fr [UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes, Equipe MaCSE, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France)

2014-09-30

Highlights: • Spontaneous grafting of aryl diazonium salts on polycrystalline silicon surfaces. • Effect of the nature and level of doping on the efficiency of the functionalization. • The grafting process was more efficient on PolySi substrates than on monosilicon. • Influence of the crystal structure and grain boundaries on the modification procedure. • Role of the reducing power of the substrate on the grafting procedure. - Abstract: The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O{sub 2} plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species.

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

International Nuclear Information System (INIS)

Girard, A.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.; Geneste, F.

2014-01-01

Highlights: • Spontaneous grafting of aryl diazonium salts on polycrystalline silicon surfaces. • Effect of the nature and level of doping on the efficiency of the functionalization. • The grafting process was more efficient on PolySi substrates than on monosilicon. • Influence of the crystal structure and grain boundaries on the modification procedure. • Role of the reducing power of the substrate on the grafting procedure. - Abstract: The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O 2 plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species

Plasma synthesis of rare earth doped integrated optical waveguides

Energy Technology Data Exchange (ETDEWEB)

Raoux, S.; Anders, S.; Yu, K.M.; Brown, I.G. [Lawrence Berkeley Lab., CA (United States); Ivanov, I.C. [Charles Evans & Associates, Redwood City, CA (United States)

1995-03-01

We describe a novel means for the production of optically active planar waveguides. The makes use of a low energy plasma deposition. Cathodic-arc-produced metal plasmas the metallic components of the films and gases are added to form compound films. Here we discuss the synthesis of Al{sub 2{minus}x}ER{sub x}O{sub 3} thin films. The erbium concentration (x) can vary from 0 to 100% and the thickness of the film can be from Angstroms to microns. In such material, at high active center concentration (x=l% to 20%), erbium ions give rise to room temperature 1.53{mu}m emission which has minimum loss in silica-based optical fibers. With this technique, multilayer integrated planar waveguide structures can be grown, such as Al{sub 2}O{sub 3}/Al{sub 2{minus}x}Er{sub x}O{sub 3}/Al{sub 2}O{sub 3}/Si, for example.

Large tuning of birefringence in two strip silicon waveguides via optomechanical motion.

Science.gov (United States)

Ma, Jing; Povinelli, Michelle L

2009-09-28

We present an optomechanical method to tune phase and group birefringence in parallel silicon strip waveguides. We first calculate the deformation of suspended, parallel strip waveguides due to optical forces. We optimize the frequency and polarization of the pump light to obtain a 9 nm deformation for an optical power of 20 mW. Widely tunable phase and group birefringence can be achieved by varying the pump power, with maximum values of 0.026 and 0.13, respectively. The giant phase birefringence allows linear to circular polarization conversion within 30 microm for a pump power of 67 mW. The group birefringence gives a tunable differential group delay of 6fs between orthogonal polarizations. We also evaluate the tuning performance of waveguides with different cross sections.

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Science.gov (United States)

Girard, A.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.; Geneste, F.

2014-09-01

The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O2 plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species.

Ultra-photo-stable coherent random laser based on liquid waveguide gain channels doped with boehmite nanosheets

Science.gov (United States)

Zhang, Hua; Zhang, Hong; Yang, Chao; Dai, Jiangyun; Yin, Jiajia; Xue, Hongyan; Feng, Guoying; Zhou, Shouhuan

2018-02-01

Construction of ultra-photo-stable coherent random laser based on liquid waveguide gain channels doped with boehmite nanosheets has been demonstrated. An Al plate uniformly coated with boehmite nanosheets was prepared by an alkali-treatment method and used as a scattering surface for the coherent random laser. Microcavity may be formed between these boehmite nanosheets owing to the strong optical feedback induced by the multiple light scattering. Many sharp peaks are observed in the emission spectra, and their laser thresholds are different, which confirms the feedback mechanism is coherent. The linewidth of the main peak at 571.74 nm is 0.28 nm, and the threshold of the main peak is about 4.96 mJ/cm2. Due to the fluidity of liquid waveguide gain medium, the photostability of this coherent random laser is better than the conventional solid state dye random lasers. The emission direction is well constrained by the waveguide effect within a certain angular range (±30°). This kind of coherent random laser can be applied in optical fluid lasers and photonic devices.

Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

Science.gov (United States)

Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

2018-02-15

The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

DEFF Research Database (Denmark)

Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

2018-01-01

A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

NARCIS (Netherlands)

Lambertz, A.

2015-01-01

The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

Optimization of silicon waveguides for gas detection application at mid-IR wavelengths

Science.gov (United States)

Butt, M. A.; Kozlova, E. S.

2018-04-01

There are several trace gases such as N2O, CO, CO2, NO, H2O, NO2, NH3, CH4 etc. which have their absorption peaks in Mid-IR spectrum These gases strongly absorb in the mid-IR > 2.5 μm spectral region due to their fundamental rotational and vibrational transitions. In this work, we modelled and optimized three different kinds of waveguides such as rib, strip and slot based on silicon platform to obtain maximum evanescent field ratio. These waveguides are designed at 3.39 μm and 4.67 μm which correspond to the absorption line of methane (CH4) and carbon monoxide (CO) respectively.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

Science.gov (United States)

Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

2012-04-09

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

Science.gov (United States)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V.; Yoon, Jongseung

2017-04-12

Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Science.gov (United States)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

The effect of oxidation on physical properties of porous silicon layers for optical applications

Energy Technology Data Exchange (ETDEWEB)

Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

2006-12-15

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.

Science.gov (United States)

Weigel, Peter O; Savanier, Marc; DeRose, Christopher T; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

2016-03-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

Science.gov (United States)

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

Directory of Open Access Journals (Sweden)

Hiroshi Tsuji

2017-06-01

Full Text Available The effects of silicon doping on the properties of Zn-O-N (ZnON films and on the device characteristics of ZnON thin-film transistors (TFTs were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Preparation of silica doped titania nanoparticles with thermal stability and photocatalytic properties and their application for leather surface functionalization

Directory of Open Access Journals (Sweden)

Carmen Gaidau

2017-11-01

Full Text Available Doped nanoparticles based on titanium dioxide are of interest for their multifunctional properties and enlarged photocatalytic activity in visible domain. Silica doped titanium dioxide nanoparticles were prepared by hydrothermal method and their structural characteristics and photocatalytic activity were determined, in order to be used for leather coating as alternative to halogen based flame retardants and dry cleaning solvents. A range of concentrations from 2% to 20% silica doped titanium dioxide nanoparticles (% denotes the theoretical weight percent of Si was synthesized and characterized by ICP-OES, FT-IR, UV-vis spectroscopy, XRD, HRTEM and DLS. Titanium dioxide network penetration was supported by Si-O-Ti and OH identification in FT-IR spectra mainly on surface of 10% and 20% silica doped titanium dioxide nanoparticles. The increase of Si-O-Ti bonds with Si dopant concentration acts as efficient barriers against sinterization and growth of TiO2 particles and explains the low particle size identified in HRTEM analyses as compared to undoped TiO2NPs. UV-vis diffuse reflectance spectra of doped titanium dioxide nanoparticles showed the shifting of absorption band to visible domain for 10% silica doped titanium dioxide nanoparticles. The crystallite sizes were calculated from XRD spectra, ranging between 16.2 and 18.1 nm. HRTEM measurement of hydrothermally synthesized titanium dioxide nanoparticles showed anatase crystallites in the range of 8.8–27 nm, while in the 20% silica doped titanium dioxide nanoparticle sample smaller crystallite with sizes between 2.7 nm and 3.5 nm was identified due to the constraints of the SiO2-based amorphous matrix. Nano sizes of 64 nm and 72 nm were found in water dispersions of 10% and 20% silica doped titanium dioxide nanoparticles and the Zeta potentials were of −53.6 mV and −52.9 mV, which indicate very good stabilities. The leather surface treated with composites of film forming polymers

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

Science.gov (United States)

Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

2016-12-15

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Phosphorus {delta}-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

Energy Technology Data Exchange (ETDEWEB)

Carter, Damien J; Marks, Nigel A [Nanochemistry Research Institute, Curtin University, PO Box U1987, Perth WA 6845 (Australia); Warschkow, Oliver; McKenzie, David R, E-mail: d.carter@curtin.edu.au [Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

2011-02-11

Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus {delta}-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

NARCIS (Netherlands)

Feinäugle, Matthias

2008-01-01

The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

High power operation of cladding pumped holmium-doped silica fibre lasers.

Science.gov (United States)

Hemming, Alexander; Bennetts, Shayne; Simakov, Nikita; Davidson, Alan; Haub, John; Carter, Adrian

2013-02-25

We report the highest power operation of a resonantly cladding-pumped, holmium-doped silica fibre laser. The cladding pumped all-glass fibre utilises a fluorine doped glass layer to provide low loss cladding guidance of the 1.95 µm pump radiation. The operation of both single mode and large-mode area fibre lasers was demonstrated, with up to 140 W of output power achieved. A slope efficiency of 59% versus launched pump power was demonstrated. The free running emission was measured to be 2.12-2.15 µm demonstrating the potential of this architecture to address the long wavelength operation of silica based fibre lasers with high efficiency.

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

Science.gov (United States)

Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

2013-10-01

Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

International Nuclear Information System (INIS)

Das, Sonali; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K; Banerjee, Chandan

2013-01-01

Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO 2 : F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm −2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system. (paper)

Nonlinear performances of dual-pump amplifiers in silicon waveguides

International Nuclear Information System (INIS)

Meng Fan; Yu Chong-Xiu; Deng Yun-Yi; Yuan Jin-Hui

2012-01-01

The performances of a dual-pump parametric and Raman amplification process and the wavelength conversion in silicon waveguides are investigated. By setting the Raman contribution fraction f to be 0.043 in our analytical model, the amplification gain of the probe signal can be obtained to be over 10 dB. The pump transfer noise (PTN), the quantum noise (QN), and the total noise figure (TNF) are discussed, and the TNF has a constant value of about 4 dB in the gain bandwidth. An idler signal generated during the parametric amplification (PA) process can be used to realize the wavelength conversion in wavelength division multiplexing (WDM) systems. In addition, the pump signal parameters, the generated free carrier lifetime and effective mode area (EMA) of the waveguide are analysed for the optimization of signal gain and noise characteristics. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

Science.gov (United States)

Kramer, Nicolaas Johannes

atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

Science.gov (United States)

Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; Pomerene, Andrew T.; Starbuck, Andrew L.; Lentine, Anthony L.; Stenger, Vincent; Mookherjea, Shayan

2016-01-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost. PMID:26927022

Phosphate-core silica-clad Er/Yb-doped optical fiber and cladding pumped laser.

Science.gov (United States)

Egorova, O N; Semjonov, S L; Velmiskin, V V; Yatsenko, Yu P; Sverchkov, S E; Galagan, B I; Denker, B I; Dianov, E M

2014-04-07

We present a composite optical fiber with a Er/Yb co-doped phosphate-glass core in a silica glass cladding as well as cladding pumped laser. The fabrication process, optical properties, and lasing parameters are described. The slope efficiency under 980 nm cladding pumping reached 39% with respect to the absorbed pump power and 28% with respect to the coupled pump power. Due to high doping level of the phosphate core optimal length was several times shorter than that of silica core fibers.

Heavy doping effects in high efficiency silicon solar cells

Science.gov (United States)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

The development of the market for neutron transmutation doped silicon

International Nuclear Information System (INIS)

Herzer, H.; Vieweg-Gutberlet, G.

1984-01-01

Neutron transmutation doped silicon was introduced to the electronic device market in the 1975-1976 time period. Today, neutron transmutation doping is definitely a mature technology applied mainly to semiconductor power devices. There is no doubt that the power device sector will remain the major consumer of NTD silicon in the near future. This paper examines the possible application of NTD silicon to other areas of the semiconductor market, and concludes that the need for NTD silicon will continue to grow and will expand into other applications. Consequently, unless new reactor capacities become available by the end of the decade, NTD silicon applications will probably be limited mainly to power and sensor devices

Bragg-grating-based rare-earth-ion-doped channel waveguide lasers and their applications

NARCIS (Netherlands)

Bernhardi, Edward

2012-01-01

The research presented in this thesis concerns the investigation and development of Bragggrating-based integrated cavities for the rare-earth-ion-doped Al2O3 (aluminium oxide) waveguide platform, both from a theoretical and an experimental point of view, with the primary purpose of realizing

Integrated optical waveguides and inertial focussing microfluidics in silica for microflow cytometry applications

International Nuclear Information System (INIS)

Butement, Jonathan T; Rowe, David J; Sessions, Neil P; Hua, Ping; Murugan, G Senthil; Wilkinson, James S; Clark, Owain; Chad, John E; Hunt, Hamish C

2016-01-01

A key challenge in the development of a microflow cytometry platform is the integration of the optical components with the fluidics as this requires compatible micro-optical and microfluidic technologies. In this work a microflow cytometry platform is presented comprising monolithically integrated waveguides and deep microfluidics in a rugged silica chip. Integrated waveguides are used to deliver excitation light to an etched microfluidic channel and also collect transmitted light. The fluidics are designed to employ inertial focussing, a particle positioning technique, to reduce signal variation by bringing the flowing particles onto the same plane as the excitation light beam. A fabrication process is described which exploits microelectronics mass production techniques including: sputtering, ICP etching and PECVD. Example devices were fabricated and the effectiveness of inertial focussing of 5.6 µ m fluorescent beads was studied showing lateral and vertical confinement of flowing beads within the microfluidic channel. The fluorescence signals from flowing calibration beads were quantified demonstrating a CV of 26%. Finally the potential of this type of device for measuring the variation in optical transmission from input to output waveguide as beads flowed through the beam was evaluated. (paper)

Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

International Nuclear Information System (INIS)

Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

2009-01-01

Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

Femtosecond laser direct writing of gratings and waveguides in high quantum efficiency erbium-doped Baccarat glass

International Nuclear Information System (INIS)

Vishnubhatla, K C; Kumar, R Sai Santosh; Rao, D Narayana; Rao, S Venugopal; Osellame, R; Ramponi, R; Bhaktha, S N B; Mattarelli, M; Montagna, M; Turrell, S; Chiappini, A; Chiasera, A; Ferrari, M; Righini, G C

2009-01-01

The femtosecond laser direct writing technique was employed to inscribe gratings and waveguides in high quantum efficiency erbium-doped Baccarat glass. Using the butt coupling technique, a systematic study of waveguide loss with respect to input pulse energy and writing speed was performed to achieve the best waveguide with low propagation loss (PL). By pumping at 980 nm, we observed signal enhancement in these active waveguides in the telecom spectral region. The refractive index change was smooth and we estimated it to be ∼10 -3 . The high quantum efficiency (∼80%) and a best PL of ∼0.9 dB cm -1 combined with signal enhancement makes Baccarat glass a potential candidate for application in photonics.

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

Directory of Open Access Journals (Sweden)

Gokhan Sahin

Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

Spin-on nanostructured silicon-silica film displaying room-temperature nanosecond lifetime photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Cohen, Y.; Hatton, B.; Miguez, H.; Coombs, N.; Fournier-Bidoz, S.; Ozin, G.A. [Materials Chemistry Research Group, Department of Chemistry, Lash Miller Chemical Laboratories, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6 (Canada); Grey, J.K.; Beaulac, R.; Reber, C. [Department of Chemistry, University of Montreal, Montreal, Quebec H3C 3J7 (Canada)

2003-04-17

A yellow transparent mesoporous silica film has been achieved by the incorporation of silicon nanoclusters into its channels. The resulting nanocomposite - fabricated using a combination of evaporation induced self- assembly and chemical vapor deposition - emits light brightly at visible wavelengths and has nanosecond radiative lifetimes at room temperature when excited by ultraviolet light (see Figure). (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Goat anti-rabbit IgG conjugated fluorescent dye-doped silica nanoparticles for human breast carcinoma cell recognition.

Science.gov (United States)

Chen, Min-Yan; Chen, Ze-Zhong; Wu, Ling-Ling; Tang, Hong-Wu; Pang, Dai-Wen

2013-11-12

We report an indirect method for cancer cell recognition using photostable fluorescent silica nanoprobes as biological labels. The dye-doped fluorescent silica nanoparticles were synthesized using the water-in-oil (W/O) reverse microemulsion method. The silica matrix was produced by the controlled hydrolysis of tetraethylorthosilicate (TEOS) in water nanodroplets with the initiation of ammonia (NH3·H2O). Fluorescein isothiocyanate (FITC) or rhodamine B isothiocyanate conjugated with dextran (RBITC-Dextran) was doped in silica nanoparticles (NPs) with a size of 60 ± 5 nm as a fluorescent signal element by covalent bonding and steric hindrance, respectively. The secondary antibody, goat anti-rabbit IgG, was conjugated on the surface of the PEG-terminated modified FITC-doped or RBITC-Dextran-doped silica nanoparticles (PFSiNPs or PBSiNPs) by covalent binding to the PEG linkers using the cyanogen bromide method. The concentrations of goat anti-rabbit IgG covering the nanoprobes were quantified via the Bradford method. In the proof-of-concept experiment, an epithelial cell adhesion molecule (EpCAM) on the human breast cancer SK-Br-3 cell surface was used as the tumor marker, and the nanoparticle functionalized with rabbit anti-EpCAM antibody was employed as the nanoprobe for cancer cell recognition. Compared with fluorescent dye labeled IgG (FITC-IgG and RBITC-IgG), the designed nanoprobes display dramatically increased stability of fluorescence as well as photostability under continuous irradiation.

Ultraviolet-light-induced processes in germanium-doped silica

DEFF Research Database (Denmark)

Kristensen, Martin

2001-01-01

A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...... which are responsible for the observed refractive index changes. Activation energies [1.85 +/-0.15 eV and 1.91 +/-0.15 eV] and rates [(2.7 +/-1.9) x 10(13) Hz and(7.2 +/-4.5) x 10(13) Hz] are determined for thermal elimination of these states. Good agreement is found with experimental results and new UV...

Influence of pretreatment temperature cycling on the radiating defect formation in silicon doped by samarium

International Nuclear Information System (INIS)

Abdurakhmanov, K.P.; Nazyrov, D.E.

2006-01-01

Full text: The raise of thermal and radiation stability as it is known, is one of actual problems of physics semiconductors. Recently it is established, that the rare-earth elements (REE) raise a stability of silicon to exterior action. In this connection the investigation of silicon doped REE by samarium and influence on its properties of heat treatments and radiation exposure is important. In sectional operation the outcomes of investigations of influence of samarium on thermal (600 degree C are reduced; 600 deg. + 900 deg. C; 900 deg. C; 900 deg. C + 600 deg. C; 1100 deg. C; 600 deg. C + 900 deg. C + 1100 deg. C; 900 deg. C + 600 deg. C + 1100 deg. C) thermal defect formation and radiation defect formation (exposure of γ-quanta 60 Co) both in beforehand wrought, and in thermally unfinished samples. After each cycle of heat treatments samples cool fast (throwing off in oil) or slowly (together with the furnace). Doping n-silicon REE by gadolinium and samarium was carried out during cultivation. The concentration of gadolinium and samarium in silicon, on sectional of a neutron-activation analysis was equaled 10 14 - 10 18 cm -3 . As control is model monocrystal silicon such as KEP-15/50. Para-meters of deep levels originating in control and doped REE samples, both past heat treatment or temperature cycling, and irradiated by the γ-quanta are defined by methods of a capacity spectroscopy: DLTS and IRC. The obtained outcomes have shown, that in irradiated with the γ-quanta 60 Co deep levels samples are formed with energies: E C -0,17 eV, E C -0,32 eV, EC-0,41 eV. Thus the parameters of deep levels vary depending on requirements of prestress heat treatment. For example heat treatment at 600 deg. C essentially increments a velocity of introduction of and centre (deep level of E C -0,17 eV), in comparison with a velocity of introduction of this level in samples with prestress heat treatment at 900 deg. C. In samples n-Si doped by samarium effectiveness of formation

Ion-beam doping of amorphous silicon with germanium isovalent impurity

International Nuclear Information System (INIS)

Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

1988-01-01

Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

Study of aluminum-doped silicon clusters

International Nuclear Information System (INIS)

Zhan Shichang; Li Baoxing; Yang Jiansong

2007-01-01

Using full-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have investigated the effect of aluminum heteroatoms on the geometric structures and bond characteristics of Si n (n=5-10) clusters in detail. It is found that the geometric framework of the ground state structures for Si n (n=5-10) clusters change to some extent upon the substitution of Al atoms in some Si atoms. The effect of aluminum doping on the silicon clusters depends on the geometric structures of Si n (n=5-10) clusters. In particular, the calculations suggest that the aluminum doping would improve the bond strength of some Si-Si bonds in the mixed Si n - m Al m clusters

Gamma irradiation up to 109 rads of all silica fibers, comparison with polymer clad silica fibers and solid sample between 0.4 and 2.5 micrometers

International Nuclear Information System (INIS)

Boisde, G.; Bonnejean, C.; Perez, J.J.; Neumann, V.; Wurier, B.; Boucher, D.

1983-05-01

The effect of γ radiation (Co 60 ) on optical fibers is studied for investigations to remote measurement in irradiating environments. The spectral characteristics of PCS and AS silica fibers, PCS ''Wet'' and AS ''wet'' and ''superwet'' are compared. An automatic computerized system for measurement ''in situ'' is used between 0,4 AND 1,1 micron. Radiation-induced effects are examined at 840nm on PCS, AS with silicone, AS with epoxy (200 and 400/600μm) up to 5.10 8 rads. Samples of ''dry'', ''wet'', ''superwet'' and ''doped fluor'' silica are studied up to 1,3.10 9 rads between 0,3 and 2,5 μm. The photobleaching, the radiation hardening and the breakeage of PCS and AS-silicone after 10 7 rads are recognized. The spectral characteristics of a band at 610-630nm, a spectral deformation at 945nm for ''wet'' fibers and a peak of the radiation-induced attenuation are observed. The kinetic of the 630nm defect in silica fibers and silica samples is also investigated [fr

Processing and optical properties of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides

Science.gov (United States)

Xiang, Qing; Zhou, Yan; Ooi, Boon Siew; Lam, Yee Loy; Chan, Yuen Chuen; Kam, Chan Hin

2000-05-01

We report here the processing and optical characterization of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides deposited on SOS substrates by the sol-gel route combined with spin-coating and rapid thermal annealing. The recipes used for preparing the solutions by sol-gel route are in mole ratio of 93SiO2:20AlO1.5: x ErO1.5. In order to verify the residual OH content in the films, FTIR spectra were measured and the morphology of the material by the XRD analysis. Five 2-layer films annealed at a maximum temperature of 500 degrees C, 700 degrees C, 900 degrees, 1000 degrees C, 1100 degrees C respectively were fabricated on silicon. The FTIR and XRD curves show that annealing at 1050 degrees C for 15s effectively removes the OH in the materia and keeps the material amorphous. The propagation loss of the planar waveguides was measured by using the method based on scattering in measurements and the result was obtained to be 1.54dB/cm. The fluorescence spectra were measured with 514nm wavelength of Ar+ laser by directly shining the pump beam on the film instead of prism coupling. The results show that the 1 mole Nd3+ content recipe has the strongest emission efficiency among the four samples investigated.

Electron trap annealing in neutron transmutation doped silicon

DEFF Research Database (Denmark)

Guldberg, J.

1977-01-01

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

International Nuclear Information System (INIS)

Zhao Lei; An Junming; Zhang Jiashun; Song Shijiao; Wu Yuanda; Hu Xiongwei

2011-01-01

A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5-8 dB, central channel's insertion loss of 2.2 dB, free spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically. (semiconductor devices)

Mass fabrication of homogeneously Yb-doped silica nanoparticles and their spectroscopic properties

International Nuclear Information System (INIS)

Xiong Liangming; Sekiya, Edson H; Saito, Kazuya

2009-01-01

A large number of homogeneously Yb-doped silica nanoparticles were continually fabricated in a vapor synthesis route, in which the Yb doping level can be well controlled by varying either the heating temperature or the carrier gas flow rate of the Yb precursor. The sizes, shapes, and morphologies of the nanoparticles were examined, and no crystallites and no Yb 2 O 3 clusters were observed in the nanoparticles. These nanoparticles exhibit a clear Yb 3+ -derived absorption at around 973-975 nm and a dependence of the emission intensity and decay time on the doping level, much different from that of sintered pellets.

Enhancing Optical Forces in InP-Based Waveguides

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Semenova, Elizaveta; Lavrinenko, Andrei

2017-01-01

Cantilever sensors are among the most important microelectromechanical systems (MEMS), which are usually actuated by electrostatic forces or piezoelectric elements. Although well-developed microfabrication technology has made silicon the prevailing material for MEMS, unique properties of other...... materials are overlooked in this context. Here we investigate optically induced forces exerted upon a semi-insulating InP waveguide suspended above a highly doped InP: Si substrate, in three different regimes: the epsilon-near-zero (ENZ), with excitation of surface plasmon polaritons (SPPs) and phonons...... excitation. An order of magnitude amplification of the force is observed when light is coupled to SPPs, and three orders of magnitude amplification is achieved in the phonon excitation regime. In the ENZ regime, the force is found to be repulsive and higher than that in a waveguide suspended above...

Doping of silicon by carbon during laser ablation process

Science.gov (United States)

Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

2007-04-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Doping of silicon by carbon during laser ablation process

International Nuclear Information System (INIS)

Raciukaitis, G; Brikas, M; Kazlauskiene, V; Miskinis, J

2007-01-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting

Silicon fiber with p-n junction

International Nuclear Information System (INIS)

Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

2014-01-01

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

Hierarchical and Size Dependent Mechanical Properties of Silica and Silicon Nanostructures Inspired by Diatom Algae

Science.gov (United States)

2010-09-01

Chaniotakis. The physical and mechanical properties of composite cements manufactured with cal- careous and clayey greek diatomite mixtures. Cement and...Hierarchical and size dependent mechanical properties of silica and silicon nanostructures inspired by diatom algae by Andre Phillipe Garcia B.S...dependent mechanical properties of silica and silicon nanostructures inspired by diatom algae 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

Experimentally validated dispersion tailoring in a silicon strip waveguide with alumina thin-film coating

DEFF Research Database (Denmark)

Guo, Kai; Christensen, Jesper Bjerge; Shi, Xiaodong

2018-01-01

We propose a silicon strip waveguide structure with alumina thin-film coating in-between the core and the cladding for group-velocity dispersion tailoring. By carefully designing the core dimension and the coating thickness, a spectrally-flattened near-zero anomalous group-velocity dispersion...

All-silica nanofluidic devices for DNA-analysis fabricated by imprint of sol-gel silica with silicon stamp

DEFF Research Database (Denmark)

Mikkelsen, Morten Bo Lindholm; Letailleur, Alban A; Søndergård, Elin

2011-01-01

We present a simple and cheap method for fabrication of silica nanofluidic devices for single-molecule studies. By imprinting sol-gel materials with a multi-level stamp comprising micro- and nanofeatures, channels of different depth are produced in a single process step. Calcination of the imprin......We present a simple and cheap method for fabrication of silica nanofluidic devices for single-molecule studies. By imprinting sol-gel materials with a multi-level stamp comprising micro- and nanofeatures, channels of different depth are produced in a single process step. Calcination...... of the imprinted hybrid sol-gel material produces purely inorganic silica, which has very low autofluorescence and can be fusion bonded to a glass lid. Compared to top-down processing of fused silica or silicon substrates, imprint of sol-gel silica enables fabrication of high-quality nanofluidic devices without...

Germanium on silicon mid-infrared waveguides and Mach-Zehnder interferometers

NARCIS (Netherlands)

Malik, A.; Muneeb, M.; Shimura, Y.; Campenhout, van J.; Loo, van de R.; Roelkens, G.C.

2013-01-01

In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2 - 5.4 µm wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented.

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Chegel, Raad

2013-11-01

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

Controlling the Er content of porous silicon using the doping current intensity

KAUST Repository

Mula, Guido

2014-07-04

The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.

Comparison of Eu(NO3)3 and Eu(acac)3 precursors for doping luminescent silica nanoparticles

International Nuclear Information System (INIS)

Enrichi, F.; Ricco, R.; Scopece, P.; Parma, A.; Mazaheri, A. R.; Riello, P.; Benedetti, A.

2010-01-01

In this study, we report the comparison between Eu 3+ -doped silica nanoparticles synthesized by Stoeber method using Eu(NO 3 ) 3 or Eu(acac) 3 as precursors. The impact of different europium species on the properties of the final silica nanospheres is investigated in details in terms of size, morphology, reachable doping amount, and luminescence efficiency. Moreover, the results obtained for different thermal treatments are presented and discussed. It is shown that the organic complex modify the silica growing process, leading to bigger and irregular nanoparticles (500-800 nm) with respect to the perfectly spherical ones (400 nm) obtained by the nitrate salt, but their luminescence intensity and lifetime is significantly higher when 800-900 o C annealing is performed.

Photoluminescence characteristics of sintered silica glass doped with Cu ions using mesoporous SiO{sub 2}-PVA nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Ikeda, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Murata, Takahiro [Faculty of Education and Master' s Course in Education, Kumamoto University, 2-40-1 Kurokami, Chuo-ku, Kumamoto 860-8555 (Japan); Fujino, Shigeru, E-mail: fujino@astec.kyushu-u.ac.jp [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2015-07-15

Monolithic silica glasses doped with Cu ions were prepared by immersing a mesoporous SiO{sub 2}-polyvinyl alcohol (PVA) nanocomposite in a copper nitrate solution followed by sintering at 1100 °C for 12 h in air. The Cu ions were reduced from divalent to monovalent during the sintering process and consequently Cu{sup +} was doped into the silica glass matrix. The sintered glass possessed blue or yellow photoluminescence (PL) under UV irradiation, depending on the total concentration of Cu ions in the sintered silica glass. At a lower concentration below 30 ppm, the isolated Cu{sup +} existed in the glass matrix resulting in the blue PL. However, above 70 ppm, the Cu{sup +}–Cu{sup +} pairs were present, exhibiting the yellow PL. It was demonstrated that the PL characteristics of the sintered silica glasses doped with monovalent copper ions were affected by the total concentration of Cu ions in the glass, which can be adjusted as a function of the immersion conditions. - Highlights: • Silica glass doped with Cu{sup +} was fabricated by sintering the nanocomposite. • The Cu ions were reduced from divalent to monovalent during the sintering process. • The sintered glass possessed blue or yellow PL under UV irradiation. • The blue and yellow PL are due to isolated Cu{sup +} and Cu{sup +}–Cu{sup +} pairs, respectively. • The PL characteristics depended on the total concentration of Cu ions in the glass.

Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide

DEFF Research Database (Denmark)

Babicheva, Viktoriia E.; Kulkova, Irina V.; Malureanu, Radu

2012-01-01

. The modulation is achieved by changing the gain of the core that results in different transmittance through the waveguides. A MSM waveguide enables high field localization and therefore high modulation speed. Bulk semiconductor, quantum wells and quantum dots, arranged in either horizontal or vertical layout......, are considered as the core of the MSM waveguide. Dependences on the waveguide core size and gain values of various active materials are studied. The designs consider also practical aspects like n- and p-doped layers and barriers in order to obtain results as close to reality. The effective propagation constants...

Preparation of acridine orange-doped silica nanoparticles for pH measurement

International Nuclear Information System (INIS)

Liu, Jinshui; Zang, Lingjie; Wang, Yiru; Liu, Guoning

2014-01-01

Acridine orange was first encapsulated into silica shell via a facile reverse microemusion method to built core–shell fluorescent nanoparticles. The nanoparticles are all in spherical shape and have a narrow size distribution, and its application as a optical pH sensor has been demonstrated. This novel sensor is based on the pH-dependent fluorescence intensities of acridine orange in different pH value. The fluorescence intensity of acridine orange-doped silica nanoparticles was decreased by increasing pH value. Under optimum conditions, the changes of fluorescence intensity were proportional to the pH value in the range of 8.00–10.90. In addition, the sensor can be easily separated by centrifugation and adds no pollution to the environment compared to the free dyes. Furthermore, the effects of ionic strength and co-existing substances were proved to have little influence on the determination of pH. The sensor has been successfully applied to determine the pH of two artificial samples. Hence, the core–shell fluorescent nanoparticles show potential for practical application. -- Highlights: • Acridine orange was encapsulated into silica shell via a facile reverse microemusion method to built core–shell fluorescent nanoparticles. • The fluorescence intensity of acridine orange-doped silica nanoparticles was decreased by increasing pH value. • Its can be used as an optical pH sensor. • The sensor can be easily separated by centrifugation and adds no pollution to the environment compared to the free dyes. • The sensor has been successfully applied to determine the pH of artificial samples

Evanescent fields of laser written waveguides

Science.gov (United States)

Jukić, Dario; Pohl, Thomas; Götte, Jörg B.

2015-03-01

We investigate the evanescent field at the surface of laser written waveguides. The waveguides are written by a direct femtosecond laser writing process into fused silica, which is then sanded down to expose the guiding layer. These waveguides support eigenmodes which have an evanescent field reaching into the vacuum above the waveguide. We study the governing wave equations and present solution for the fundamental eigenmodes of the modified waveguides.

Doping of silicon with carbon during laser ablation process

Science.gov (United States)

Račiukaitis, G.; Brikas, M.; Kazlauskienė, V.; Miškinis, J.

2006-12-01

The effect of laser ablation on properties of remaining material in silicon was investigated. It was found that laser cutting of wafers in the air induced the doping of silicon with carbon. The effect was more distinct when using higher laser power or UV radiation. Carbon ions created bonds with silicon atoms in the depth of the material. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion to clarify its depth profile in silicon was performed. Photochemical reactions of such type changed the structure of material and could be the reason of the reduced machining quality. The controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Single-mode optical waveguides on native high-refractive-index substrates

Directory of Open Access Journals (Sweden)

Richard R. Grote

2016-10-01

Full Text Available High-refractive-index semiconductor optical waveguides form the basis for modern photonic integrated circuits (PICs. However, conventional methods for achieving optical confinement require a thick lower-refractive-index support layer that impedes large-scale co-integration with electronics and limits the materials on which PICs can be fabricated. To address this challenge, we present a general architecture for single-mode waveguides that confine light in a high-refractive-index material on a native substrate. The waveguide consists of a high-aspect-ratio fin of the guiding material surrounded by lower-refractive-index dielectrics and is compatible with standard top-down fabrication techniques. This letter describes a physically intuitive, semi-analytical, effective index model for designing fin waveguides, which is confirmed with fully vectorial numerical simulations. Design examples are presented for diamond and silicon at visible and telecommunications wavelengths, respectively, along with calculations of propagation loss due to bending, scattering, and substrate leakage. Potential methods of fabrication are also discussed. The proposed waveguide geometry allows PICs to be fabricated alongside silicon CMOS electronics on the same wafer, removes the need for heteroepitaxy in III-V PICs, and will enable wafer-scale photonic integration on emerging material platforms such as diamond and SiC.

Effect of acid leaching conditions on impurity removal from silicon doped by magnesium

Directory of Open Access Journals (Sweden)

Stine Espelien

2017-07-01

Full Text Available The effect of magnesium addition into a commercial silicon and its leaching refining behavior is studied for producing solar grade silicon feedstock. Two different levels of Mg is added into a commercial silicon and the leaching of the produced alloys by 10% HCl solution at 60 ℃ for different durations is performed. It is shown that the microstructure of the alloy and in particular the distribution of eutectic phases is dependent on the amount of the added Mg. Moreover, the metallic impurities in silicon such as Fe, Al, Ca and Ti are mainly forming silicide particles with different compositions. These silicides are physically more detached from the primary silicon grains and their removal through chemical and physical separation in leaching is better for higher Mg additions. It is observed that the leaching is more effective for the purification of smaller silicon particles produced from each Mg-doped silicon alloy. It is shown that acid leaching by the applied method is effective to reach more than 70% of phosphorous removal. It is also shown that the purity of silicon is dependent on the total Mg removal and effectiveness of leaching on removing the Mg2Si phase.

Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

International Nuclear Information System (INIS)

Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

1987-01-01

Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

Fabrication of 2 × 8 power splitters in silica-on-silicon by the direct UV writing technique

DEFF Research Database (Denmark)

Olivero, Massimo; Svalgaard, Mikael

2006-01-01

In this letter, we present the first demonstration of 2 × 8 power splitters made in silica-on-silicon by direct ultraviolet (UV) writing. The fabricated components are compact and exhibit good performance in terms of loss, uniformity, and bandwidth, showing that direct UV writing can become...

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides

International Nuclear Information System (INIS)

Manna, S.; Ramiro-Manzano, F.; Mancinelli, M.; Turri, F.; Pavesi, L.; Ghulinyan, M.; Pucker, G.

2015-01-01

Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10 −8  cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation

Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

Science.gov (United States)

Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

2015-06-01

Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

Correlated photon-pair generation in a periodically poled MgO doped stoichiometric lithium tantalate reverse proton exchanged waveguide

NARCIS (Netherlands)

Lobino, M.; Marshall, G.D.; Xiong, C.; Clark, A.S.; Bonneau, D.; Natarajan, C.M.; Tanner, M.G.; Hadfield, R.H.; Dorenbos, S.N.; Zijlstra, T.; Zwiller, V.; Marangoni, M.; Ramponi, R.; Thompson, M.G.; Eggleton, B.J.; O'Brien, J.L.

2011-01-01

We demonstrate photon-pair generation in a reverse proton exchanged waveguide fabricated on a periodically poled magnesium doped stoichiometric lithium tantalate substrate. Detected pairs are generated via a cascaded second order nonlinear process where a pump laser at wavelength of 1.55 ?m is first

Poling of UV-written Waveguides

DEFF Research Database (Denmark)

Arentoft, Jesper; Kristensen, Martin; Hübner, Jörg

1999-01-01

We report poling of UV-written silica waveguides. Thermal poling induces an electro-optic coefficient of 0.05 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. No measurable decay in the induced electro-optic effect was detected after nine months......We report poling of UV-written silica waveguides. Thermal poling induces an electro-optic coefficient of 0.05 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. No measurable decay in the induced electro-optic effect was detected after nine months...

Electrical property studies of neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

1978-01-01

Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

Multivariate data analysis of process control data from neutron transmutation doping of silicon

DEFF Research Database (Denmark)

Heydorn, K.; Hegaard, N.

1994-01-01

Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control the proc......Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control...

Synthesis and characterization of silicon-doped polycrystalline GaN ...

Indian Academy of Sciences (India)

Administrator

300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 ..... Yu H B, Chen H, Li D, Han Y J, Zheng X H, Huang Q and ... Hong J-II, Chang Y, Ding Y, Wang Z L and Snyder R L.

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

International Nuclear Information System (INIS)

Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

2008-01-01

Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

Investigation of elements contamination and analysis of electrical effect of this contamination in silicon on the neutron transmutation doping in the RSG-GAS

International Nuclear Information System (INIS)

Sudjadi, U.

1998-01-01

The elements of the contamination on the Neutron Transmutation Doping Process (NTD) have investigated by Multi Channel Analyser (MCA). This Investigation is important to know the quality of silicon doping in NTD. We have found that Mn-45, Ga-72 and Au-198 are elements of contamination in silicon after NTD process. Analysis of electrical effect of this elements contamination on semiconductor silicon is described also in this paper

Microstructure and wear behaviour of silicon doped Cr-N nanocomposite coatings

Energy Technology Data Exchange (ETDEWEB)

Bao Mingdong, E-mail: bmingd@yahoo.com.c [School of mechanical engineering, Ningbo University of Technology, Ningbo 315016 (China); Yu Lei; Xu Xuebo [School of mechanical engineering, Ningbo University of Technology, Ningbo 315016 (China); He Jiawen [State Key Lab. for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, 710049 (China); Sun Hailin [Teer Coatings Ltd., Berry Hill Industrial Estate, Droitwich Worcestershire WR9 9AS (United Kingdom); Zhejiang Huijin-Teer Coatings Technolgy Co., Ltd., Lin' an 311305 (China); Teer, D.G. [Teer Coatings Ltd., Berry Hill Industrial Estate, Droitwich Worcestershire WR9 9AS (United Kingdom)

2009-07-01

Hard Cr-N and silicon doped Cr-Si-N nanocomposite coatings were deposited using closed unbalanced magnetron sputtering ion plating system. Coatings doped with various Si contents were synthesized by changing the power applied on Si targets. Composition of the films was analyzed using glow discharge optical emission spectrometry (GDOES). Microstructure and properties of the coatings were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), and nano-indentation. The harnesses and the elastic modulus of Cr-Si-N coatings gradually increased with rising of silicon content and exhibited a maximum at silicon content of 4.1 at.% and 5.5 at.%. The maximum hardness and elastic modulus of the Cr-Si-N nanocomposite coatings were approximately 30 GPa and 352 GPa, respectively. Further increase in the silicon content resulted in a decrease in the hardness and the elastic modulus of the coatings. Results from XRD analyses of CrN coatings indicated that strongly preferred orientations of (111) were detected. The diffraction patterns of Cr-Si-N coatings showed a clear (220) with weak (200) and (311) preferred orientations, but the peak of CrN (111) was decreased with the increase of Si concentration. The XRD data of single-phase Si{sub 3}N{sub 4} was free of peak. The peaks of CrN (111) and (220) were shifted slightly and broadened with the increase of silicon content. SEM observations of the sections of Cr-Si-N coatings with different silicon concentrations showed a typical columnar structure. It was evident from TEM observation that nanocomposite Cr-Si-N coatings exhibited nano-scale grain size. Friction coefficient and specific wear rate (SWR) of silicon doped Cr-N coatings from pin-on-disk test were significantly lower in comparison to that of CrN coatings.

Summary of radiation-induced transient absorption and recovery in fiber optic waveguides. [Pulsed electrons and x-rays

Energy Technology Data Exchange (ETDEWEB)

Skoog, C.D.

1976-11-01

The absorption induced in fiber optic waveguides by pulsed electron and X-ray radiation has been measured as a function of optical wavelength from 450 to 950 nm, irradiation temperature from -54 to 71/sup 0/C, and dose from 1 to 500 krads. The fibers studied are Ge-doped silica core fibers (Corning Low Loss), ''pure'' vitreous silica core fibers (Schott, Bell Laboratories, Fiberoptic Cable Corp., and Valtec Fiberoptics), polymethyl-methacrylate core fibers (DuPont CROFON and PFX), and polystyrene core fibers (International Fiber Optics and Polyoptics). Models that have been developed to account for the observed absorption recovery are also summarized.

The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

Science.gov (United States)

Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

2018-04-01

All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

All-silica photonic bandgap fibre with zero dispersion and a large mode area at 730 nm

DEFF Research Database (Denmark)

Riishede, Jesper; Lægsgaard, Jesper; Broeng, Jes

2004-01-01

A theoretical analysis of a photonic bandgap fibre, consisting of a pure silica background with a triangular lattice of Ge-doped high-index rods, is presented. This novel fibre design guides a single, well-confined mode in a core region made from undoped silica. The fibre is found to have positive...... waveguide dispersion, which may be used to shift the zero-dispersion wavelength down to 730 nm, while maintaining an effective mode area of 17 $mu@-m$+2$/. This is an order of magnitude larger than what may be achieved in highly non-linear index-guiding microstructured fibres with comparable zero...

Optical Amplification at 1525 nm in BaYF5: 20% Yb3+, 2% Er3+ Nanocrystals Doped SU-8 Polymer Waveguide

Directory of Open Access Journals (Sweden)

Pengcheng Zhao

2014-01-01

Full Text Available We demonstrated optical amplification in BaYF5: 20% Yb3+, 2% Er3+ (BYF nanocrystals doped polymer waveguide. BYF nanocrystals with an average size of ∼13 nm were synthesized by a high-boiling solvent process. Intense 1.53 μm fluorescence was obtained in the nanocrystals under excitation at 980 nm. An optical polymer waveguide was fabricated by using BYF nanocrystals doped SU-8 polymer as the core material. A relative optical gain of ∼10.4 dB at 1525 nm was achieved in a 1.1 cm long waveguide for an input signal power of ∼0.09 mW and a pump power of ∼212 mW.

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Science.gov (United States)

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

2017-12-01

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

First-principles study on silicon atom doped monolayer graphene

Science.gov (United States)

Rafique, Muhammad; Shuai, Yong; Hussain, Nayyar

2018-01-01

This paper illustrates the structural, electronic and optical properties of individual silicon (Si) atom-doped single layer graphene using density functional theory method. Si atom forms tight bonding with graphene layer. The effect of doping has been investigated by varying the concentration of Si atoms from 3.125% to 9.37% (i.e. From one to three Si atoms in 4 × 4 pure graphene supercell containing 32 carbon atoms), respectively. Electronic structure, partial density of states (PDOS) and optical properties of pure and Si atom-doped graphene sheet were calculated using VASP (Vienna ab-initio Simulation Package). The calculated results for pure graphene sheet were then compared with Si atom doped graphene. It is revealed that upon Si doping in graphene, a finite band gap appears at the high symmetric K-point, thereby making graphene a direct band gap semiconductor. Moreover, the band gap value is directly proportional to the concentration of impurity Si atoms present in graphene lattice. Upon analyzing the optical properties of Si atom-doped graphene structures, it is found that, there is significant change in the refractive index of the graphene after Si atom substitution in graphene. In addition, the overall absorption spectrum of graphene is decreased after Si atom doping. Although a significant red shift in absorption is found to occur towards visible range of radiation when Si atom is substituted in its lattice. The reflectivity of graphene improves in low energy region after Si atom substitution in graphene. These results can be useful for tuning the electronic structure and to manipulate the optical properties of graphene layer in the visible region.

Experimental analysis of silicon oxycarbide thin films and waveguides

Science.gov (United States)

Memon, Faisal Ahmed; Morichetti, Francesco; Somaschini, Claudio; Iseni, Giosue; Melloni, Andrea

2017-05-01

Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 +/- 0.05 dB/mm for TE and 0.41 +/- 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.

Optical gain at 650 nm from a polymer waveguide with dye-doped cladding

Science.gov (United States)

Reilly, M. A.; Coleman, B.; Pun, E. Y. B.; Penty, R. V.; White, I. H.; Ramon, M.; Xia, R.; Bradley, D. D. C.

2005-12-01

Signal amplification at the polymer optical fiber low-loss window of 650 nm is reported in an SU8 rib waveguide coated with Rhodamine-640 doped poly(methyl methacrylate). A signal beam is end-fired into the facet of a 7×100μm waveguide and amplified by top pumping of the 2-μm-thick cladding region with a pulsed pump source focused into a 9-mm-long stripe. A gain of 14dB and a minimum signal-to-noise ratio of around 2 dB are achieved in a 15-mm-long device with a low threshold pump intensity of 0.25μJ/mm2, which is an order of magnitude lower than previously reported.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Energy Technology Data Exchange (ETDEWEB)

Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

International Nuclear Information System (INIS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-01-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Self-assembled Targeting of Cancer Cells by Iron(III)-doped, Silica Nanoparticles

OpenAIRE

Mitchell, K.K. Pohaku; Sandoval, S.; Cortes-Mateos, M. J.; Alfaro, J.G.; Kummel, A. C.; Trogler, W.C.

2014-01-01

Iron(III)-doped silica nanoshells are shown to possess an in vitro cell-receptor mediated targeting functionality for endocytosis. Compared to plain silica nanoparticles, iron enriched ones are shown to be target-specific, a property that makes them potentially better vehicles for applications, such as drug delivery and tumor imaging, by making them more selective and thereby reducing the nanoparticle dose. Iron(III) in the nanoshells can interact with endogenous transferrin, a serum protein ...

Low crosstalk Arrayed Waveguide Grating with Cascaded Waveguide Grating Filter

International Nuclear Information System (INIS)

Deng Yang; Liu Yuan; Gao Dingshan

2011-01-01

We propose a highly compact and low crosstalk arrayed waveguide grating (AWG) with cascaded waveguide grating (CWGF). The side lobes of the silicon nanowire AWG, which are normally introduced by fabrication errors, can be effectively suppressed by the CWGF. And the crosstalk can be improved about 15dB.

Interfacing Dielectric-Loaded Plasmonic and Silicon Photonic Waveguides: Theoretical Analysis and Experimental Demonstration

DEFF Research Database (Denmark)

Tsilipakos, O.; Pitilakis, A.; Yioultsis, T. V.

2012-01-01

A comprehensive theoretical analysis of end-fire coupling between dielectric-loaded surface plasmon polariton and rib/wire silicon-on-insulator (SOI) waveguides is presented. Simulations are based on the 3-D vector finite element method. The geometrical parameters of the interface are varied...... in order to identify the ones leading to optimum performance, i.e., maximum coupling efficiency. Fabrication tolerances about the optimum parameter values are also assessed. In addition, the effect of a longitudinal metallic stripe gap on coupling efficiency is quantified, since such gaps have been...

Compact Spectrometer based on a silicon multimode waveguide

DEFF Research Database (Denmark)

Piels, Molly; Zibar, Darko

2017-01-01

A multimode waveguide spectrometer with 4 GHz resolution, 250 GHz usable range, and a 1.6 mm × 2.1 mm footprint is demonstrated. The operating range is greatly extended by including distinct mode-exciting elements on chip....

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

Science.gov (United States)

Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

2013-05-20

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

2014-09-01

The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

A pure silica ytterbium-doped sol–gel-based fiber laser

International Nuclear Information System (INIS)

Baz, Assaad; El Hamzaoui, Hicham; Fsaifes, Ihsan; Bouwmans, Géraud; Bouazaoui, Mohamed; Bigot, Laurent

2013-01-01

In this letter it is demonstrated that the sol–gel route combined with fiber fabrication by the stack and draw method can be used to realize efficient fiber lasers. More precisely, a pure silica ytterbium-doped photonic crystal fiber with a core obtained by the sol–gel polymeric technique is studied, and a laser efficiency of more than 73% is achieved for a laser emission around 1034 nm. The optical and spectroscopic properties of the monolith and fiber are investigated, together with the sensitivity of the fiber to photodarkening. The dimensions of the ytterbium-doped monolith combined with the uniform doping and refractive index that are reported make this technique particularly interesting for the realization of large-mode area fibers. (letter)

A mass spectrographic investigation of the methods for obtaining quantitative analyses for the mass balance of P and B through a submerged arc silicon smelter

International Nuclear Information System (INIS)

Rogers, D.E.C.; Jones, D.S.; Wegman, J.W.; Brain, L.; Van Wamelen, J.

1983-11-01

Mass spectrographic analyses of silica, silicon and silica reducing agents have been made using an arc discharge mass spectrograph. Analyses of certified standards and standard mixtures are given. An evaluation of doping techniques shows that the solid doping technique is satisfactory and that the liquid doping technique leads to significant errors. The amount of liquid dopant absorbed onto the substrate matrix varied from one compound to another and from one matrix to another. Comparison of analyses of solid-doped and undoped certified standards shows that all of the solid dopant is taken up by the sample. Analysis of silica reducing agents used in the arc reduction furnace shows that the major source of contamination by B and P is likely to be the coal and wood. Silica contains 0.4 ppm of B and 4 ppm of P and is a minor source of contamination. The levels in silicon are about 10 ppm for B and 20 ppm for P. A mass balance on P cannot be made and the missing amount is larger than the inaccuracy of the analysis. For analyses of feedstocks where the smelter outlet fumes are not sampled an accuracy of analysis to a factor of two is sufficient for the analysis of the coal and wood chips

Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

International Nuclear Information System (INIS)

Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

2015-01-01

The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

Photocatalytic oxidation of organic compounds via waveguide-supported titanium dioxide films

Science.gov (United States)

Miller, Lawrence W.

A photochemical reactor based on titanium dioxide (TiO2)-coated silica optical fibers was constructed to explore the use of waveguide-supported TiO2 films for photocatalytic oxidation of organic compounds. The reactor was used for the photocatalytic oxidation of 4-chlorophenol in water. It was confirmed that TiO2 films could be securely attached to silica optical fibers. The 4-chlorophenol (100 mumol/L in water) was successfully oxidized on the TiO2 surface when UV light (310 nm--380 nm) was propagated through the fibers to the films. Rates of 4-chlorophenol oxidation and UV light flux to the fibers were measured. The quantum efficiency of 4-chlorophenol oxidation [defined as the change in 4-chlorophenol concentration divided by the UV light absorbed by the catalyst] was determined as a function of TiO2 catalyst film thickness and internal incident angle of propagating UV light. A maximum quantum efficiency of 2.8% was measured when TiO2 film thickness was ca. 80 nm and the maximum internal incident angle of propagating light was 84°. Quantum efficiency increased with increasing internal angle of incidence of propagating light and decreased with TiO2 film thickness. UV-Visible internal reflection spectroscopy was used to determine whether UV light propagated through TiO2-coated silica waveguides in an ATR mode. Propagation of UV light in an ATR mode was confirmed by the similarities between internal reflection spectra of phenolphthalein obtained with uncoated and TiO2-coated silica crystals. Planar silica waveguides coated with TiO2 were employed in a photocatalytic reactor for the oxidation of formic acid (833 mumol/L in water). It was shown that the quantum yield of formic acid oxidation [defined as the moles of formic acid oxidized divided by the moles of UV photons absorbed by the catalyst] on the waveguide-supported TiO2 surface is enhanced when UV light propagates through the waveguides in an ATR mode. A maximum quantum yield of 3.9% was found for formic

The relationship between milling a new silica-doped zirconia and its resistance to low-temperature degradation (LTD): a pilot study.

Science.gov (United States)

Nakamura, Takashi; Usami, Hirofumi; Ohnishi, Hiroshi; Nishida, Hisataka; Tang, Xuehua; Wakabayashi, Kazumichi; Sekino, Tohru; Yatani, Hirofumi

2012-02-03

The aim of this study was to determine the machinability of new silica-doped Y-TZP by CAD/CAM and the resistance to low temperature degradation of the milled sample by comparing with a commercial HIP type Y-TZP material. The copings could be milled from silica-doped Y-TZP blocks without chipping, and there was no significant difference between the two types of Y-TZP materials in either the marginal or the inner gap between the abutment and the coping. After aging, the monoclinic content in the commercial Y-TZP copings increased from 25% before testing to 65%, while that of silica-doped Y-TZP copings slightly increased from 23% to 30%. The silica-doped Y-TZP copings did not have any significant difference in fracture load in a comparison between the control group and the aging group, while the commercial Y-TZP copings had a significantly lower fracture load for the aging group than for the control group.

Silicon-Doped Titanium Dioxide Nanotubes Promoted Bone Formation on Titanium Implants.

Science.gov (United States)

Zhao, Xijiang; Wang, Tao; Qian, Shi; Liu, Xuanyong; Sun, Junying; Li, Bin

2016-02-26

While titanium (Ti) implants have been extensively used in orthopaedic and dental applications, the intrinsic bioinertness of untreated Ti surface usually results in insufficient osseointegration irrespective of the excellent biocompatibility and mechanical properties of it. In this study, we prepared surface modified Ti substrates in which silicon (Si) was doped into the titanium dioxide (TiO₂) nanotubes on Ti surface using plasma immersion ion implantation (PIII) technology. Compared to TiO₂ nanotubes and Ti alone, Si-doped TiO₂ nanotubes significantly enhanced the expression of genes related to osteogenic differentiation, including Col-I, ALP, Runx2, OCN, and OPN, in mouse pre-osteoblastic MC3T3-E1 cells and deposition of mineral matrix. In vivo, the pull-out mechanical tests after two weeks of implantation in rat femur showed that Si-doped TiO₂ nanotubes improved implant fixation strength by 18% and 54% compared to TiO₂-NT and Ti implants, respectively. Together, findings from this study indicate that Si-doped TiO₂ nanotubes promoted the osteogenic differentiation of osteoblastic cells and improved bone-Ti integration. Therefore, they may have considerable potential for the bioactive surface modification of Ti implants.

Record power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

DEFF Research Database (Denmark)

Jain, Deepak; Sidharthan, R.; Moselund, Peter M.

2016-01-01

the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source...... based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America......We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped...

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n{sup ++}/n regions

Energy Technology Data Exchange (ETDEWEB)

Dimassi, Wissem; Jafel, Hayet; Lajnef, Mohamed; Ali Kanzari, M.; Bouaicha, Mongi; Bessais, Brahim; Ezzaouia, Hatem [Laboratoire de Photovoltaique, Centre de Recherche et des Technologies de l' Energie, PB: 95, Hammam Lif 2050 (Tunisia)

2011-06-15

The realization of screen-printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low-cost approach to fabricate selective emitter (n{sup ++}/n doped silicon regions), using oxidized porous silicon (ox-PS) as a mask. Micro-periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox-PS let us obtain n{sup ++} doped regions in opened zones and n doped large regions underneath the ox-PS layer. The dark I-V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n{sup ++}/n type structure. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dual Mode Fluorophore-Doped Nickel Nitrilotriacetic Acid-Modified Silica Nanoparticles Combine Histidine-Tagged Protein Purification with Site-Specific Fluorophore Labeling

OpenAIRE

Kim, Sung Hoon; Jeyakumar, M.; Katzenellenbogen, John A.

2007-01-01

We present the first example of a fluorophore-doped nickel chelate surface- modified silica nanoparticle that functions in a dual mode, combining histidine-tagged protein purification with site-specific fluorophore labeling. Tetramethylrhodamine (TMR)-doped silica nanoparticles, estimated to contain 700–900 TMRs per ca. 23-nm particle, were surface modified with nitrilotriacetic acid (NTA), producing TMR-SiO2-NTA-Ni+2. Silica-embedded TMR retains very high quantum yield, is resistant to quenc...

Rare-earth-ion doped KY(WO4)2 optical waveguides grown by liquid-phase epitaxy

NARCIS (Netherlands)

Romanyuk, Y.E.; Apostolopoulos, V.; Utke, U.; Pollnau, Markus

High-quality KY(WO4)2 thin layers doped with rare-earth-ions were grown using liquid-phase epitaxy. A low-temperature mixture of chlorides was used as the flux and undoped KY(WO4)2 crystals as substrates. The crystalline layers possessed thicknesses up to 10 µm. Passive and active planar waveguiding

Low-loss curved subwavelength grating waveguide based on index engineering

Science.gov (United States)

Wang, Zheng; Xu, Xiaochuan; Fan, D. L.; Wang, Yaoguo; Chen, Ray T.

2016-03-01

Subwavelength grating (SWG) waveguide is an intriguing alternative to conventional optical waveguides due to its freedom to tune a few important waveguide properties such as dispersion and refractive index. Devices based on SWG waveguide have demonstrated impressive performances compared to those of conventional waveguides. However, the large loss of SWG waveguide bends jeopardizes their applications in integrated photonics circuits. In this work, we propose that a predistorted refractive index distribution in SWG waveguide bends can effectively decrease the mode mismatch noise and radiation loss simultaneously, and thus significantly reduce the bend loss. Here, we achieved the pre-distortion refractive index distribution by using trapezoidal silicon pillars. This geometry tuning approach is numerically optimized and experimentally demonstrated. The average insertion loss of a 5 μm SWG waveguide bend can be reduced drastically from 5.58 dB to 1.37 dB per 90° bend for quasi-TE polarization. In the future, the proposed approach can be readily adopted to enhance performance of an array of SWG waveguide-based photonics devices.

Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

Science.gov (United States)

Vogt, Dominik Walter; Leonhardt, Rainer

2018-05-01

We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

Light propagation studies on laser modified waveguides using scanning near-field optical microscopy

DEFF Research Database (Denmark)

Borrise, X.; Berini, Abadal Gabriel; Jimenez, D.

2001-01-01

By means of direct laser writing on Al, a new method to locally modify optical waveguides is proposed. This technique has been applied to silicon nitride waveguides, allowing modifications of the optical propagation along the guide. To study the formed structures, a scanning near-held optical mic...

Electrochemical doping of mesoporous silicon with Er: the effect of the current intensity

Energy Technology Data Exchange (ETDEWEB)

Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Pinna, Elisa [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d’Armi, 09126 Cagliari (Italy)

2014-08-30

Graphical abstract: - Highlights: • A multidisciplinary approach on porous Si electrochemical Er doping is proposed. • The phenomena taking place at the large developed surface of porous silicon are studied. • Electrochemical, optical and structural characterizations are used. • The early stages of doping are studied by electrochemical impedance spectroscopy. • The dependence of the final amount of Er deposited on the current intensity and not only on the transferred charge is shown. - Abstract: There is an ongoing intense research for cost-effective Er-doped Si-based light-emitting devices at the 1.5 μm wavelength. The efficient electrochemical Er-doping of porous silicon for this purpose requires a good understanding of the phenomena involved, since those taking place at the pores inner surface control the doping process. However, almost no attention has been given, to date, to the relevant effects of the current intensity onto the doping results. In this work, the effect of the current intensity on the doping process is explored by means of electrochemical impedance spectroscopy, optical reflectivity and energy dispersive spectrometry via scanning electron microscopy. The combined analysis of all results strongly suggests that the formation of a gel-like Er ethanolate, unaffected by changes in the sample thickness, occurs from the very first stages of the doping process. Moreover, while for constant current doping processes we show that, under any given doping condition, the doping level is proportional to the transferred charge, we demonstrate that performing the doping process using different current intensities may lead to dramatically different results.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Erbium-implanted silica colloids with 80% luminescence quantum efficiency

Science.gov (United States)

Slooff, L. H.; de Dood, M. J. A.; van Blaaderen, A.; Polman, A.

2000-06-01

Silica colloids with a diameter of 240-360 nm, grown by wet chemical synthesis using ethanol, ammonia, water, and tetraethoxysilane, were implanted with 350 keV Er ions, to peak concentrations of 0.2-1.1 at. % and put onto a silicon or glass substrate. After annealing at 700-900 °C the colloids show clear room-temperature photoluminescence at 1.53 μm, with lifetimes as high as 17 ms. By comparing data of different Er concentrations, the purely radiative lifetime is estimated to be 20-22 ms, indicating a high quantum efficiency of about 80%. This high quantum efficiency indicates that, after annealing, the silica colloids are almost free of OH impurities. Spinning a layer of polymethylmethacrylate over the silica spheres results in an optically transparent nanocomposite layer, that can be used as a planar optical waveguide amplifier at 1.5 μm that is fully compatible with polymer technology.

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

International Nuclear Information System (INIS)

Barba, D; Martin, F; Ross, G G

2008-01-01

Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

Analysis and design of tunable wideband microwave photonics phase shifter based on Fabry-Perot cavity and Bragg mirrors in silicon-on-insulator waveguide.

Science.gov (United States)

Qu, Pengfei; Zhou, Jingran; Chen, Weiyou; Li, Fumin; Li, Haibin; Liu, Caixia; Ruan, Shengping; Dong, Wei

2010-04-20

We designed a microwave (MW) photonics phase shifter, consisting of a Fabry-Perot filter, a phase modulation region (PMR), and distributed Bragg reflectors, in a silicon-on-insulator rib waveguide. The thermo-optics effect was employed to tune the PMR. It was theoretically demonstrated that the linear MW phase shift of 0-2pi could be achieved by a refractive index variation of 0-9.68x10(-3) in an ultrawideband (about 38?GHz-1.9?THz), and the corresponding tuning resolution was about 6.92 degrees / degrees C. The device had a very compact size. It could be easily integrated in silicon optoelectronic chips and expected to be widely used in the high-frequency MW photonics field.

The infra-red photoresponse of erbium-doped silicon nanocrystals

International Nuclear Information System (INIS)

Kenyon, A.J.; Bhamber, S.S.; Pitt, C.W.

2003-01-01

We have exploited the interaction between erbium ions and silicon nanoclusters to probe the photoresponse of erbium-doped silicon nanocrystals in the spectral region around 1.5 μm. We have produced an MOS device in which the oxide layer has been implanted with both erbium and silicon and annealed to produce silicon nanocrystals. Upon illumination with a 1480 nm laser diode, interaction between the nanocrystals and the rare-earth ions results in a modification of the conductivity of the oxide that enables a current to flow when a voltage is applied across the oxide layer

1.28-Tb/s Demultiplexing of an OTDM DPSK Data Signal Using a Silicon Waveguide

DEFF Research Database (Denmark)

Ji, Hua; Galili, Michael; Hu, Hao

2010-01-01

This letter demonstrates optical demultiplexing of a 1.28-Tb/s serial differential phase-shift-keying data signal using a nano-engineered silicon waveguide. We first present error-free performance at 640 Gb/s and then at 1.28 Tb/s with characterization of all 128 channels. Bit-error rates below $10...

Liquid Phase Deposition of Silica on the Hexagonally Close-Packed Monolayer of Silica Spheres

Directory of Open Access Journals (Sweden)

Seo Young Yoon

2013-01-01

Full Text Available Liquid phase deposition is a method used for the nonelectrochemical production of polycrystalline ceramic films at low temperatures, most commonly silicon dioxide films. Herein, we report that silica spheres are organized in a hexagonal close-packed array using a patterned substrate. On this monolayer of silica spheres, we could fabricate new nanostructures in which deposition and etching compete through a modified LPD reaction. In the early stage, silica spheres began to undergo etching, and then, silica bridges between the silica spheres appeared by the local deposition reaction. Finally, the silica spheres and bridges disappeared completely. We propose the mechanism for the formation of nanostructure.

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

International Nuclear Information System (INIS)

Nowak, S.H.; Banaś, D.; Błchucki, W.; Cao, W.; Dousse, J.-Cl.; Hönicke, P.; Hoszowska, J.; Jabłoński, Ł.; Kayser, Y.; Kubala-Kukuś, A.; Pajek, M.; Reinhardt, F.; Savu, A.V.; Szlachetko, J.

2014-01-01

Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle- and layer-like samples, the measured angular intensity profiles show additional periodicity-related features. The latter could be explained by a novel theoretical approach based on simple geometrical optics (GO) considerations. The new GO-based calculations were found to yield results in good agreement with experiment, also in cases where other theoretical approaches are not valid, e.g., periodic particle distributions with an increased surface coverage

Probing Field Distributions on Waveguide Structures with an Atomic Force/Photon Scanning Tunneling Microscope

NARCIS (Netherlands)

Borgonjen, E.G.; Borgonjen, E.G.; Moers, M.H.P.; Moers, M.H.P.; Ruiter, A.G.T.; van Hulst, N.F.

1995-01-01

A 'stand-alone' Photon Scanning Tunneling Microscope combined with an Atomic force Microscope, using a micro-fabricated silicon-nitride probe, is applied to the imaging of field distribution in integrated optical ridge waveguides. The electric field on the waveguide is locally probed by coupling to

Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

2009-07-01

Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magneto-optical non-reciprocal devices in silicon photonics

Directory of Open Access Journals (Sweden)

Yuya Shoji

2014-01-01

Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

Near infrared emission and multicolor tunability of enhanced upconversion emission from Er{sup 3+}–Yb{sup 3+} co-doped Nb{sub 2}O{sub 5} nanocrystals embedded in silica-based nanocomposite and planar waveguides for photonics

Energy Technology Data Exchange (ETDEWEB)

Aquino, Felipe Thomaz [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo. Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP (Brazil); Ferrari, Jefferson Luis [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo. Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP (Brazil); Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João Del Rei, MG (Brazil); Maia, Lauro June Queiroz [Grupo Física de Materiais, Instituto de Física, Universidade Federal de Goiás, Campus II, C.P. 131, CEP 74001-970, Goiânia, GO (Brazil); Ribeiro, Sidney José Lima [Institute of Chemistry- São Paulo State University- UNESP, Araraquara, SP 14800-900 (Brazil); Ferrier, Alban [PSL Research University, Chimie ParisTech - CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); and others

2016-02-15

This work reports on the Yb{sup 3+} ion addition effect on the near infrared emission and infrared-to-visible up conversion from planar waveguides based on Er{sup 3+}–Yb{sup 3+} co-doped Nb{sub 2}O{sub 5} nanocrystals embedded in SiO{sub 2}-based nanocomposite prepared by a sol–gel process with controlled crystallization in situ. Planar waveguides and xerogels containing Si/Nb molar ratio of 90:10 up to 50:50 were prepared. Spherical-like orthorhombic or monoclinic Nb{sub 2}O{sub 5} nanocrystals were grown in the amorphous SiO{sub 2}-based host depending on the niobium content and annealing temperature, resulting in transparent glass ceramics. Crystallization process was intensely affected by rare earth content increase. Enhancement and broadening of the NIR emission has been achieved depending on the rare earth content, niobium content and annealing temperature. Effective Yb{sup 3+}→Er{sup 3+} energy transfer and a high-intensity broad band emission in the near infrared region assigned to the Er{sup 3+} ions {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} transition, and longer {sup 4}I{sub 13/2} lifetimes were observed for samples containing orthorhombic Nb{sub 2}O{sub 5} nanocrystals. Intense green and red emissions were registered for all Er{sup 3+}–Yb{sup 3+} co-doped waveguides under 980 nm excitation, assigned to {sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} (525 nm),{sup 4}S{sub 3/2}→{sup 4}I{sub 15/2} (545nm) and {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} (670 nm) transitions, respectively. Different relative green and red intensities emissions were observed, depending upon niobium oxide content and the laser power. Upconversion dynamics were determined by the photons number, evidencing that ESA or ETU mechanisms are probably occurring. The 1931 CIE chromaticity diagrams indicated interesting color tunability based on the waveguides composition and pump power. The nanocomposite waveguides are promising materials for photonic applications as optical amplifiers and

A disposable biosensor based on immobilization of laccase with silica spheres on the MWCNTs-doped screen-printed electrode

Directory of Open Access Journals (Sweden)

Li Yuanting

2012-09-01

Full Text Available Abstract Background Biosensors have attracted increasing attention as reliable analytical instruments in in situ monitoring of public health and environmental pollution. For enzyme-based biosensors, the stabilization of enzymatic activity on the biological recognition element is of great importance. It is generally acknowledged that an effective immobilization technique is a key step to achieve the construction quality of biosensors. Results A novel disposable biosensor was constructed by immobilizing laccase (Lac with silica spheres on the surface of multi-walled carbon nanotubes (MWCNTs-doped screen-printed electrode (SPE. Then, it was characterized in morphology and electrochemical properties by scanning electron microscopy (SEM and cyclic voltammetry (CV. The characterization results indicated that a high loading of Lac and a good electrocatalytic activity could be obtained, attributing to the porous structure, large specific area and good biocompatibility of silica spheres and MWCNTs. Furthermore, the electrochemical sensing properties of the constructed biosensor were investigated by choosing dopamine (DA as the typical model of phenolic compounds. It was shown that the biosensor displays a good linearity in the range from 1.3 to 85.5 μM with a detection limit of 0.42 μM (S/N = 3, and the Michaelis-Menten constant (Kmapp was calculated to be 3.78 μM. Conclusion The immobilization of Lac was successfully achieved with silica spheres to construct a disposable biosensor on the MWCNTs-doped SPE (MWCNTs/SPE. This biosensor could determine DA based on a non-oxidative mechanism in a rapid, selective and sensitive way. Besides, the developed biosensor could retain high enzymatic activity and possess good stability without cross-linking reagents. The proposed immobilization approach and the constructed biosensor offer a great potential for the fabrication of the enzyme-based biosensors and the analysis of phenolic compounds.

Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

International Nuclear Information System (INIS)

Paviet-Salomon, B.; Gall, S.; Slaoui, A.

2013-01-01

Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.

Science.gov (United States)

Zhang, S J; Lin, S S; Li, X Q; Liu, X Y; Wu, H A; Xu, W L; Wang, P; Wu, Z Q; Zhong, H K; Xu, Z J

2016-01-07

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.

Sol-gel coatings: An alternative route for producing planar optical waveguides

Energy Technology Data Exchange (ETDEWEB)

Rey-Garcia, F.; Gomez-Reino, C. [Unidad Asociada de Optica and Microoptica GRIN (CSIC-ICMA), Departamento de Fisica Aplicada, Escola Universitaria de Optica e Optometria, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela (Spain); Flores-Arias, M.T., E-mail: maite.flores@usc.es [Unidad Asociada de Optica and Microoptica GRIN (CSIC-ICMA), Departamento de Fisica Aplicada, Escola Universitaria de Optica e Optometria, Universidade de Santiago de Compostela, Campus Sur s/n, E-15782 Santiago de Compostela (Spain); De La Fuente, G.F., E-mail: xerman@unizar.es [Instituto de Ciencia de Materiales de Aragon (CSIC-Universidad de Zaragoza), Maria de Luna 3, E-50018 Zaragoza (Spain); Duran, A. [Instituto de Ceramica y Vidrio (CSIC), Kelsen 5, E-28049, Madrid (Spain); Castro, Y., E-mail: castro@icv.csic.es [Instituto de Ceramica y Vidrio (CSIC), Kelsen 5, E-28049, Madrid (Spain)

2011-09-01

Inorganic and hybrid planar waveguides with different compositions (silica-titania, methacrylate-silica-cerium oxide, zirconia-cerium oxide and silica-zirconia) have been obtained by sol-gel synthesis followed by dip-coating. Soda-lime glass slides and conventional commercial window glass were used as substrates. The thickness and refractive index of the coatings were determined by profilometry and Spectroscopic Ellipsometry. Waveguide efficiency was measured at ca. 70.8% with a He-Ne laser beam, coupled with an optical microscope objective into and out of the waveguiding layer via a double prism configuration. Thicknesses between 150 and 2000 nm, along with refractive index values ranging between 1.45 and {approx} 1.99 ({lambda} = 633 nm) were obtained depending on the sol composition and the dip-coating conditions. This wide range of values allows designing multilayered guides that can be used in a variety of applications.

Sol-gel coatings: An alternative route for producing planar optical waveguides

International Nuclear Information System (INIS)

Rey-Garcia, F.; Gomez-Reino, C.; Flores-Arias, M.T.; De La Fuente, G.F.; Duran, A.; Castro, Y.

2011-01-01

Inorganic and hybrid planar waveguides with different compositions (silica-titania, methacrylate-silica-cerium oxide, zirconia-cerium oxide and silica-zirconia) have been obtained by sol-gel synthesis followed by dip-coating. Soda-lime glass slides and conventional commercial window glass were used as substrates. The thickness and refractive index of the coatings were determined by profilometry and Spectroscopic Ellipsometry. Waveguide efficiency was measured at ca. 70.8% with a He-Ne laser beam, coupled with an optical microscope objective into and out of the waveguiding layer via a double prism configuration. Thicknesses between 150 and 2000 nm, along with refractive index values ranging between 1.45 and ∼ 1.99 (λ = 633 nm) were obtained depending on the sol composition and the dip-coating conditions. This wide range of values allows designing multilayered guides that can be used in a variety of applications.

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

International Nuclear Information System (INIS)

Zhou, Hao; Gu, Tingyi; McMillan, James F.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan; Wong, Chee Wei

2016-01-01

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

Science.gov (United States)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

Refractive index and density in F- and Cl-doped silica glasses

International Nuclear Information System (INIS)

Kakiuchida, Hiroshi; Shimodaira, Noriaki; Sekiya, Edson H.; Saito, Kazuya; Ikushima, Akira J.

2005-01-01

The refractive index and density of fluorine- and chlorine-doped silica glasses were measured as functions of fictive temperature. The halogen concentrations were observed to have a refractive index or density that is independent of the fictive temperature were found. This implies that these properties are not affected by any heat-treatment conditions

Fabrication of superhydrophobic and antibacterial surface on cotton fabric by doped silica -based sols with nanoparticles of copper

Science.gov (United States)

Berendjchi, Amirhosein; Khajavi, Ramin; Yazdanshenas, Mohammad Esmaeil

2011-11-01

The study discussed the synthesis of silica sol using the sol-gel method, doped with two different amounts of Cu nanoparticles. Cotton fabric samples were impregnated by the prepared sols and then dried and cured. To block hydroxyl groups, some samples were also treated with hexadecyltrimethoxysilane. The average particle size of colloidal silica nanoparticles were measured by the particle size analyzer. The morphology, roughness, and hydrophobic properties of the surface fabricated on cotton samples were analyzed and compared via the scanning electron microscopy, the transmission electron microscopy, the scanning probe microscopy, with static water contact angle (SWC), and water shedding angle measurements. Furthermore, the antibacterial efficiency of samples was quantitatively evaluated using AATCC 100 method. The addition of 0.5% (wt/wt) Cu into silica sol caused the silica nanoparticles to agglomerate in more grape-like clusters on cotton fabrics. Such fabricated surface revealed the highest value of SWC (155° for a 10-μl droplet) due to air trapping capability of its inclined structure. However, the presence of higher amounts of Cu nanoparticles (2% wt/wt) in silica sol resulted in the most slippery smooth surface on cotton fabrics. All fabricated surfaces containing Cu nanoparticles showed the perfect antibacterial activity against both of gram-negative and gram-positive bacteria.

Application of neutron transmutation doping method to initially p-type silicon material.

Science.gov (United States)

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Direct Wafer Bonding and Its Application to Waveguide Optical Isolators

Directory of Open Access Journals (Sweden)

Ryohei Takei

2012-05-01

Full Text Available This paper reviews the direct bonding technique focusing on the waveguide optical isolator application. A surface activated direct bonding technique is a powerful tool to realize a tight contact between dissimilar materials. This technique has the potential advantage that dissimilar materials are bonded at low temperature, which enables one to avoid the issue associated with the difference in thermal expansion. Using this technique, a magneto-optic garnet is successfully bonded on silicon, III-V compound semiconductors and LiNbO₃. As an application of this technique, waveguide optical isolators are investigated including an interferometric waveguide optical isolator and a semileaky waveguide optical isolator. The interferometric waveguide optical isolator that uses nonreciprocal phase shift is applicable to a variety of waveguide platforms. The low refractive index of buried oxide layer in a silicon-on-insulator (SOI waveguide enhances the magneto-optic phase shift, which contributes to the size reduction of the isolator. A semileaky waveguide optical isolator has the advantage of large fabrication-tolerance as well as a wide operation wavelength range.

Direct Wafer Bonding and Its Application to Waveguide Optical Isolators.

Science.gov (United States)

Mizumoto, Tetsuya; Shoji, Yuya; Takei, Ryohei

2012-05-24

This paper reviews the direct bonding technique focusing on the waveguide optical isolator application. A surface activated direct bonding technique is a powerful tool to realize a tight contact between dissimilar materials. This technique has the potential advantage that dissimilar materials are bonded at low temperature, which enables one to avoid the issue associated with the difference in thermal expansion. Using this technique, a magneto-optic garnet is successfully bonded on silicon, III-V compound semiconductors and LiNbO₃. As an application of this technique, waveguide optical isolators are investigated including an interferometric waveguide optical isolator and a semileaky waveguide optical isolator. The interferometric waveguide optical isolator that uses nonreciprocal phase shift is applicable to a variety of waveguide platforms. The low refractive index of buried oxide layer in a silicon-on-insulator (SOI) waveguide enhances the magneto-optic phase shift, which contributes to the size reduction of the isolator. A semileaky waveguide optical isolator has the advantage of large fabrication-tolerance as well as a wide operation wavelength range.

Neutron Transmutation Doping of Silicon at Research Reactors

International Nuclear Information System (INIS)

2012-05-01

This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the world's research reactor facilities in this domain is included, featuring their characteristics for irradiation capabilities, associated production capacities and processing.

High-speed detection at two micrometres with monolithic silicon photodiodes

Science.gov (United States)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

Neutron transmutation doping of silicon in the SAFARI-1 research reactor

International Nuclear Information System (INIS)

Louw, P.A.; Robertson, D.G.; Strydom, W.J.

1994-01-01

The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration with Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activities are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed

Neutron transmutation doping of silicon in the safari-1 research reactor

International Nuclear Information System (INIS)

Louw, P.A.; Robertson, D.G.; Strydom, W.J.

1994-01-01

The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration the Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activities are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed. 10 refs., 2 tabs., 6 figs

UV/Vis visible optical waveguides fabricated using organic-inorganic nanocomposite layers.

Science.gov (United States)

Simone, Giuseppina; Perozziello, Gerardo

2011-03-01

Nanocomposite layers based on silica nanoparticles and a methacrylate matrix are synthesized by a solvent-free process and characterized in order to realize UV/Vis transparent optical waveguides. Chemical functionalization of the silica nanoparticles permits to interface the polymers and the silica. The refractive index, roughness and wettability and the machinability of the layers can be tuned changing the silica nanoparticle concentration and chemical modification of the surface of the nanoparticles. The optical transparency of the layers is affected by the nanoparticles organization between the organic chains, while it increased proportionally with respect to silica concentration. Nanocomposite layers with a concentration of 40 wt% in silica reached UV transparency for a wavelength of 250 nm. UV/Vis transparent waveguides were micromilled through nanocomposite layers and characterized. Propagation losses were measured to be around 1 dB cm(-1) at a wavelength of 350 nm.

Er:YAG delamination of immersed biological membranes using sealed flexible hollow waveguides

Science.gov (United States)

Sagi-Dolev, A. M.; Dror, Jacob; Inberg, Alexandra; Ferencz, J. R.; Croitoru, Nathan I.

1996-04-01

The radiation of Er-YAG laser ((lambda) equals 2.94 micrometer) gives selective interaction with tissues. The extinction in soft tissues is only a few micrometers and in hard tissues is of the order of hundreds of micrometers. This makes this type of laser very suitable for treatments in dentistry, orthopedy, or ophthalmology. Because the usual silica fibers are not transmitting the radiation at lambda equals 2.94 micrometer of this laser, many applications cannot be presently performed. Fused silica hollow fibers for Er-YAG radiation were developed in our laboratory and several possible applications in dentistry, orthopedy and ophthalmology were indicated. Hole opening and implantation preparation of teeth were experimented, using Er-YAG laser and hollow plastic waveguide delivery systems. Hole drilling in cow bones was demonstrated for applications in orthopedy. A new procedure of delivering Er-YAG radiation on fibrotic membranes of inner eggshell as a model of the membranes in eyes was developed employing silica hollow waveguides of 0.5 and 0.7 mm ID or a plastic waveguide of 1.0 mm ID. For this purpose waveguides with sealed distal tip were employed to enable us to approach the delivery system through liquid media near to the membrane. This experiment demonstrates the possibility of surgical applications in vitectomy in ophthalmology using Er-YAG laser and silica hollow waveguides.

Coating of calcia-doped ceria with amorphous silica shell by seeded polymerization technique

International Nuclear Information System (INIS)

El-Toni, Ahmed Mohamed; Yin, Shu; Yabe, Shinryo; Sato, Tsugio

2005-01-01

Calcia-doped ceria is of potential interest as an ultraviolet (UV) radiation blocking material in personal care products. However, its high catalytic ability for oxidation of organic materials makes it difficult to use as a sunscreen material. Therefore, calcia-doped ceria was coated with amorphous silica by means of seeded polymerization technique in order to depress its oxidation catalytic ability. The catalytic ability as well as UV-shielding ability was investigated for coated particles

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

Science.gov (United States)

Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

2018-02-01

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Cooperative upconversion as the gain-limiting factor in Er doped miniature Al2O3 optical waveguide amplifiers

International Nuclear Information System (INIS)

Kik, P.G.; Polman, A.

2003-01-01

Erbium doped Al 2 O 3 waveguide amplifiers were fabricated using two different doping methods, namely Er ion implantation into sputter deposited Al 2 O 3 , and co-sputtering from an Er 2 O 3 /Al 2 O 3 target. Although the Er concentration in both materials is almost identical (0.28 and 0.31 at. %), the amplifiers show a completely different behavior. Upon pumping with 1.48 μm, the co-sputtered waveguide shows a strong green luminescence from the 4 S 3/2 level, indicating efficient cooperative upconversion in this material. This is confirmed by pump power dependent measurements of the optical transmission at 1.53 μm and the spontaneous emission at 1.53 and 0.98 μm. All measurements can be accurately modeled using a set of rate equations that include first order and second order cooperative upconversion. The first order cooperative upconversion coefficient C 24 is found to be 3.5x10 -16 cm 3 s -1 in the co-sputtered material, two orders of magnitude higher than the value obtained in Er implanted Al 2 O 3 of 4.1x10 -18 cm 3 s -1 . It is concluded that the co-sputtering process results in a strongly inhomogeneous atomic scale spatial distribution of the Er ions. As a result, the co-sputtered waveguides do not show optical gain, while the implanted waveguides do

Synthesis of silicon carbide by carbothermal reduction of silica

International Nuclear Information System (INIS)

Abel, Joao Luis

2009-01-01

The production of silicon carbide (SiC) in an industrial scale still by carbothermal reduction of silica. This study aims to identify, in a comparative way, among the common reducers like petroleum coke, carbon black, charcoal and graphite the carbothermal reduction of silica from the peat. It is shown, that the peat, also occurs in nature together with high purity silica sand deposits, where the proximity of raw materials and their quality are key elements that determine the type, purity and cost of production of SiC. Tests were running from samples produced in the electric resistance furnace with controlled atmosphere at temperatures of 1550 degree C, 1600 degree C and 1650 degree C, both the precursors and products of reaction of carbothermal reduction were characterized by applying techniques of X-ray diffraction, scanning electron microscopy (SEM) and Energy-Dispersive X-ray analysis Spectroscopy (EDS). The results showed the formation of SiC for all common reducers, as well as for peat, but it was not possible to realize clearly the difference between them, being necessary, specific tests. (author)

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Effects of pillar height and junction depth on the performance of radially doped silicon pillar arrays for solar energy applications

NARCIS (Netherlands)

Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

2016-01-01

The effects of pillar height and junction depth on solar cell characteristics are investigated to provide design rules for arrays of such pillars in solar energy applications. Radially doped silicon pillar arrays are fabricated by deep reactive ion etching of silicon substrates followed by the

Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

Directory of Open Access Journals (Sweden)

Iraj S. Amiri

2018-06-01

Full Text Available A three-dimensional (3-D finite-difference-time-domain (FDTD analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm, the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm atomic layers of the graphene grate. Keywords: Optical waveguide, Silicon waveguide, Grate, Graphene, Optical transmissivity

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

Science.gov (United States)

Zhang, S. J.; Lin, S. S.; Li, X. Q.; Liu, X. Y.; Wu, H. A.; Xu, W. L.; Wang, P.; Wu, Z. Q.; Zhong, H. K.; Xu, Z. J.

2015-12-01

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron

The Refractive Index Measurement Of Silicon Dioxide Thin Film by the Coupling Prism Method

International Nuclear Information System (INIS)

Budianto, Anwar; Hariyanto, Sigit; Subarkah

1996-01-01

Refractive index of silicon dioxide thin film that doped with phosphor (SiO 2 :P) above the pure silicon dioxide substrate has been measured by light coupling prism method. The method principle is focusing the light on coupling prism base so that the light propagates into the waveguide layer while the reflected one forms a mode in the observation plane. The SiO 2 thin film as waveguide layer has a refractive index that give the thick and refractive index relation. The He-Ne laser as light source has the wavelength λ 0,6328 μm. The refractive index measurement of the thin film with the substrate refractive index n sb = 1,47 and the thin film thick d = 2μm gives n g = 1,5534 ± 0,01136. This method can distinguish the refractive index of thin film about 6% to the refractive index of substrate

Flexible integration of free-standing nanowires into silicon photonics.

Science.gov (United States)

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.