Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

Science.gov (United States)

Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

2018-05-01

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

Mottness

International Nuclear Information System (INIS)

Phillips, Philip

2006-01-01

We review several of the normal state properties of the cuprates in an attempt to establish an organizing principle from which pseudogap phenomena, broad spectral features, T-linear resistivity, and spectral weight transfer emerge. We first show that standard field theories with a single critical length scale cannot capture the T-linear resistivity as long as the charge carriers are critical. What seems to be missing is an additional length scale, which may or may not be critical. Second, we prove a generalised version of Luttinger's theorem for a Mott insulator. In particular, we show that for Mott insulators, regardless of the spatial dimension, the Fermi surface of the non-interacting system is converted into a surface of zeros of the single-particle Green function when the underlying band structure has particle-hole symmetry. Only in the presence of particle-hole symmetry does the volume of the surface of zeros equal the particle density. The surface of zeros persists at finite doping and is shown to provide a framework from which pseudogaps, broad spectral features, spectral weight transfer on the Mott gap scale, and the additional length scale required to capture T-linear resistivity can be understood

Dimensional crossover and cold-atom realization of topological Mott insulators

Science.gov (United States)

Scheurer, Mathias S.; Rachel, Stephan; Orth, Peter P.

2015-02-01

Interacting cold-atomic gases in optical lattices offer an experimental approach to outstanding problems of many body physics. One important example is the interplay of interaction and topology which promises to generate a variety of exotic phases such as the fractionalized Chern insulator or the topological Mott insulator. Both theoretically understanding these states of matter and finding suitable systems that host them have proven to be challenging problems. Here we propose a cold-atom setup where Hubbard on-site interactions give rise to spin liquid-like phases: weak and strong topological Mott insulators. They represent the celebrated paradigm of an interacting and topological quantum state with fractionalized spinon excitations that inherit the topology of the non-interacting system. Our proposal shall help to pave the way for a controlled experimental investigation of this exotic state of matter in optical lattices. Furthermore, it allows for the investigation of a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator by tuning the hopping between the layers.

Single-spin addressing in an atomic Mott insulator

DEFF Research Database (Denmark)

Weitenberg, Christof; Endres, Manuel; Sherson, Jacob

2011-01-01

directly monitored the tunnelling quantum dynamics of single atoms in the lattice prepared along a single line, and observed that our addressing scheme leaves the atoms in the motional ground state. The results should enable studies of entropy transport and the quantum dynamics of spin impurities...... and quantum spin dynamics. Here we demonstrate how such control can be implemented at the most fundamental level of a single spin at a specific site of an optical lattice. Using a tightly focused laser beam together with a microwave field, we were able to flip the spin of individual atoms in a Mott insulator...... with sub-diffraction-limited resolution, well below the lattice spacing. The Mott insulator provided us with a large two-dimensional array of perfectly arranged atoms, in which we created arbitrary spin patterns by sequentially addressing selected lattice sites after freezing out the atom distribution. We...

Angle Resolved Photoemission Spectroscopy Studies of the Mott Insulator to Superconductor Evolution in Ca2-xNaxCuO2Cl2

Energy Technology Data Exchange (ETDEWEB)

Shen, Kyle Michael

2005-09-02

It is widely believed that many of the exotic physical properties of the high-T{sub c} cuprate superconductors arise from the proximity of these materials to the strongly correlated, antiferromagnetic Mott insulating state. Therefore, one of the fundamental questions in the field of high-temperature superconductivity is to understand the insulator-to-superconductor transition and precisely how the electronic structure of Mott insulator evolves as the first holes are doped into the system. This dissertation presents high-resolution, doping dependent angle-resolved photoemission (ARPES) studies of the cuprate superconductor Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}, spanning from the undoped parent Mott insulator to a high-temperature superconductor with a T{sub c} of 22 K. A phenomenological model is proposed to explain how the spectral lineshape, the quasiparticle band dispersion, and the chemical potential all progress with doping in a logical and self-consistent framework. This model is based on Franck-Condon broadening observed in polaronic systems where strong electron-boson interactions cause the quasiparticle residue, Z, to be vanishingly small. Comparisons of the low-lying states to different electronic states in the valence band strongly suggest that the coupling of the photohole to the lattice (i.e. lattice polaron formation) is the dominant broadening mechanism for the lower Hubbard band states. Combining this polaronic framework with high-resolution ARPES measurements finally provides a resolution to the long-standing controversy over the behavior of the chemical potential in the high-T{sub c} cuprates. This scenario arises from replacing the conventional Fermi liquid quasiparticle interpretation of the features in the Mott insulator by a Franck-Condon model, allowing the reassignment of the position of the quasiparticle pole. As a function of hole doping, the chemical potential shifts smoothly into the valence band while spectral weight is transferred

An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

Energy Technology Data Exchange (ETDEWEB)

Ronning, Filip

2002-03-19

One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

Can disorder drive a Mott insulator into a metal in 2D?

International Nuclear Information System (INIS)

Trivedi, Nandini; Heidarian, Dariush

2006-01-01

We find that isoelectronic disorder generates novel phases in a Mott insulator at half filling. For both binary disorder potentials and for random site disorder models, the Mott gap is destroyed locally generating puddles of gapless excitations. With increasing disorder, these puddles grow and rather surprising, form an inhomogeneous metal in 2D. Antiferromagnetic long range order is more robust than the Mott gap and persists into the metal, getting destroyed close to a critical disorder where doubly occupied and empty sites percolate. (author)

Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

Energy Technology Data Exchange (ETDEWEB)

Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

2010-07-25

This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

Raman Scattering as a Probe of the Magnetic State of BEDT-TTF Based Mott Insulators

Directory of Open Access Journals (Sweden)

Nora Hassan

2018-05-01

Full Text Available Quasi-two-dimensional Mott insulators based on BEDT-TTF molecules have recently demonstrated a variety of exotic states, which originate from electron–electron correlations and geometrical frustration of the lattice. Among those states are a triangular S = 1/2 spin liquid and quantum dipole liquid. In this article, we show the power of Raman scattering technique to characterize magnetic and electronic excitations of these states. Our results demonstrate a distinction between a spectrum of magnetic excitations in a simple Mott insulator with antiferromagnetic interactions, and a spectrum of an insulator with an additional on-site charge degree of freedom.

High pressure metallization of Mott Insulators: Magnetic, structural and electronic properties

International Nuclear Information System (INIS)

Pasternak, M.P.; Hearne, G.; Sterer, E.; Taylor, R.D.; Jeanloz, R.

1993-01-01

High pressure studies of the insulator-metal transition in the (TM)I 2 (TM = V, Fe, Co and Ni) compounds are described. Those divalent transition-metal iodides are structurally isomorphous and classified as Mott Insulators. Resistivity, X-ray diffraction and Moessbauer Spectroscopy were employed to investigate the electronic, structural, and magnetic properties as a function of pressure both on the highly correlated and on the metallic regimes

Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

2016-07-01

Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

Single-atom-resolved fluorescence imaging of an atomic Mott insulator

DEFF Research Database (Denmark)

Sherson, Jacob; Weitenberg, Christof; Andres, Manuel

2010-01-01

in situ images of a quantum fluid in which each underlying quantum particle is detected. Here we report fluorescence imaging of strongly interacting bosonic Mott insulators in an optical lattice with single-atom and single-site resolution. From our images, we fully reconstruct the atom distribution...

Electrostatic doping of a Mott insulator in an oxide heterostructure: the case of LaVO{sub 3}/SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Mueller, Andreas; Pfaff, Florian; Sing, Michael; Claessen, Ralph [Physikalisches Insititut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany); Boschker, Hans; Kamp, Martin; Koster, Gertjan; Rijnders, Guus [Faculty of Science and Technology and MESA-plus Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

2012-07-01

The discovery of a quasi-two-dimensional electron system at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3} has triggered intense investigations of oxide heterostructures with other material combinations. The hope is that by combining a polar overlayer with a non-polar substrate electronic reconstruction will lead to highly mobile interface charge carriers with special properties. The formation of a conducting interface layer in epitaxial LaVO{sub 3}/SrTiO{sub 3}, where LaVO{sub 3} is a Mott insulator, is studied by transport measurements and hard X-ray photoelectron spectroscopy. We identify an insulator-to-metal transition above a critical LaVO{sub 3} thickness with transport properties similar to those recently reported for LaAlO{sub 3}/SrTiO{sub 3} interfaces. Interestingly, our photoemission measurements give evidence that electronic charge is transferred exclusively to the LaVO{sub 3}-side of the interface caused by an electronic reconstruction within the film itself. This opens the opportunity to study a band-filling controlled Mott transition induced by a purely electrostatic mechanism.

Superconductivity, Mott-Hubbard states, and molecular orbital order in intercalated fullerides

CERN Document Server

Iwasa, Y

2003-01-01

This article reviews the current status of chemically doped fullerene superconductors and related compounds, with particular focus on Mott-Hubbard states and the role of molecular orbital degeneracy. Alkaline-earth metal fullerides produce superconductors of several kinds, all of which have states with higher valence than (C sub 6 sub 0) sup 6 sup - , where the second lowest unoccupied molecular orbital (the LUMO + 1 state) is filled. Alkali-metal-doped fullerides, on the other hand, afford superconductors only at the stoichiometry A sub 3 C sub 6 sub 0 (A denotes alkali metal) and in basically fcc structures. The metallicity and superconductivity of A sub 3 C sub 6 sub 0 compounds are destroyed either by reduction of the crystal symmetry or by change in the valence of C sub 6 sub 0. This difference is attributed to the narrower bandwidth in the A sub 3 C sub 6 sub 0 system, causing electronic instability in Jahn-Teller insulators and Mott-Hubbard insulators. The latter metal-insulator transition is driven by...

Dimensional crossover and cold-atom realization of gapless and semi-metallic Mott insulating phases

Science.gov (United States)

Orth, Peter P.; Scheurer, Mathias; Rachel, Stephan

2014-03-01

We propose a realistic cold-atom setup which allows for a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator phase by simply tuning the hopping between the layers. We further employ cluster slave-rotor mean-field theory to study the effect of additional Hubbard onsite interactions that give rise to various spin liquid-like phases such as gapless and semi-metallic Mott insulating states.

Mott-insulating phases and magnetism of fermions in a double-well optical lattice

International Nuclear Information System (INIS)

Wang, Xin; Zhou, Qi; Das Sarma, S.

2011-01-01

We theoretically investigate, using nonperturbative strong correlation techniques, Mott-insulating phases and magnetic ordering of two-component fermions in a two-dimensional double-well optical lattice. At filling of two fermions per site, there are two types of Mott insulators, one of which is characterized by spin-1 antiferromagnetism below the Neel temperature. The superexchange interaction in this system is induced by the interplay between the interband interaction and the spin degree of freedom. A great advantage of the double-well optical lattice is that the magnetic quantum phase diagram and the Neel temperature can be easily controlled by tuning the orbital energy splitting of the two-level system. Particularly, the Neel temperature can be one order of magnitude larger than that in standard optical lattices, facilitating the experimental search for magnetic ordering in optical lattice systems.

Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals.

Science.gov (United States)

Nozoe, Soichiro; Kinoshita, Nobuaki; Matsuda, Masaki

2016-04-01

By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2 . 2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2 . 2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2 . 2CHCl3 can work as useful hole-injection and transport material in OLEDs.

Dynamical cluster approximation plus semiclassical approximation study for a Mott insulator and d-wave pairing

Science.gov (United States)

Kim, SungKun; Lee, Hunpyo

2017-06-01

Via a dynamical cluster approximation with N c = 4 in combination with a semiclassical approximation (DCA+SCA), we study the doped two-dimensional Hubbard model. We obtain a plaquette antiferromagnetic (AF) Mott insulator, a plaquette AF ordered metal, a pseudogap (or d-wave superconductor) and a paramagnetic metal by tuning the doping concentration. These features are similar to the behaviors observed in copper-oxide superconductors and are in qualitative agreement with the results calculated by the cluster dynamical mean field theory with the continuous-time quantum Monte Carlo (CDMFT+CTQMC) approach. The results of our DCA+SCA differ from those of the CDMFT+CTQMC approach in that the d-wave superconducting order parameters are shown even in the high doped region, unlike the results of the CDMFT+CTQMC approach. We think that the strong plaquette AF orderings in the dynamical cluster approximation (DCA) with N c = 4 suppress superconducting states with increasing doping up to strongly doped region, because frozen dynamical fluctuations in a semiclassical approximation (SCA) approach are unable to destroy those orderings. Our calculation with short-range spatial fluctuations is initial research, because the SCA can manage long-range spatial fluctuations in feasible computational times beyond the CDMFT+CTQMC tool. We believe that our future DCA+SCA calculations should supply information on the fully momentum-resolved physical properties, which could be compared with the results measured by angle-resolved photoemission spectroscopy experiments.

Spectral properties near the Mott transition in the two-dimensional Hubbard model

Science.gov (United States)

Kohno, Masanori

2013-03-01

Single-particle excitations near the Mott transition in the two-dimensional (2D) Hubbard model are investigated by using cluster perturbation theory. The Mott transition is characterized by the loss of the spectral weight from the dispersing mode that leads continuously to the spin-wave excitation of the Mott insulator. The origins of the dominant modes of the 2D Hubbard model near the Mott transition can be traced back to those of the one-dimensional Hubbard model. Various anomalous spectral features observed in cuprate high-temperature superconductors, such as the pseudogap, Fermi arc, flat band, doping-induced states, hole pockets, and spinon-like and holon-like branches, as well as giant kink and waterfall in the dispersion relation, are explained in a unified manner as properties near the Mott transition in a 2D system.

Site-resolved imaging of a bosonic Mott insulator using ytterbium atoms

Science.gov (United States)

Miranda, Martin; Inoue, Ryotaro; Tambo, Naoki; Kozuma, Mikio

2017-10-01

We demonstrate site-resolved imaging of a strongly correlated quantum system without relying on laser cooling techniques during fluorescence imaging. We observe the formation of Mott shells in the insulating regime and realize thermometry in an atomic cloud. This work proves the feasibility of the noncooled approach and opens the door to extending the detection technology to new atomic species.

SU (N ) spin-wave theory: Application to spin-orbital Mott insulators

Science.gov (United States)

Dong, Zhao-Yang; Wang, Wei; Li, Jian-Xin

2018-05-01

We present the application of the SU (N ) spin-wave theory to spin-orbital Mott insulators whose ground states exhibit magnetic orders. When taking both spin and orbital degrees of freedom into account rather than projecting Hilbert space onto the Kramers doublet, which is the lowest spin-orbital locked energy levels, the SU (N ) spin-wave theory should take the place of the SU (2 ) one due to the inevitable spin-orbital multipole exchange interactions. To implement the application, we introduce an efficient general local mean-field method, which involves all local fluctuations, and develop the SU (N ) linear spin-wave theory. Our approach is tested firstly by calculating the multipolar spin-wave spectra of the SU (4 ) antiferromagnetic model. Then, we apply it to spin-orbital Mott insulators. It is revealed that the Hund's coupling would influence the effectiveness of the isospin-1 /2 picture when the spin-orbital coupling is not large enough. We further carry out the SU (N ) spin-wave calculations of two materials, α -RuCl3 and Sr2IrO4 , and find that the magnonic and spin-orbital excitations are consistent with experiments.

Mean-Field Scaling of the Superfluid to Mott Insulator Transition in a 2D Optical Superlattice.

Science.gov (United States)

Thomas, Claire K; Barter, Thomas H; Leung, Tsz-Him; Okano, Masayuki; Jo, Gyu-Boong; Guzman, Jennie; Kimchi, Itamar; Vishwanath, Ashvin; Stamper-Kurn, Dan M

2017-09-08

The mean-field treatment of the Bose-Hubbard model predicts properties of lattice-trapped gases to be insensitive to the specific lattice geometry once system energies are scaled by the lattice coordination number z. We test this scaling directly by comparing coherence properties of ^{87}Rb gases that are driven across the superfluid to Mott insulator transition within optical lattices of either the kagome (z=4) or the triangular (z=6) geometries. The coherent fraction measured for atoms in the kagome lattice is lower than for those in a triangular lattice with the same interaction and tunneling energies. A comparison of measurements from both lattices agrees quantitatively with the scaling prediction. We also study the response of the gas to a change in lattice geometry, and observe the dynamics as a strongly interacting kagome-lattice gas is suddenly "hole doped" by introducing the additional sites of the triangular lattice.

Mott transitions in the periodic Anderson model

International Nuclear Information System (INIS)

Logan, David E; Galpin, Martin R; Mannouch, Jonathan

2016-01-01

The periodic Anderson model (PAM) is studied within the framework of dynamical mean-field theory, with particular emphasis on the interaction-driven Mott transition it contains, and on resultant Mott insulators of both Mott–Hubbard and charge-transfer type. The form of the PAM phase diagram is first deduced on general grounds using two exact results, over the full range of model parameters and including metallic, Mott, Kondo and band insulator phases. The effective low-energy model which describes the PAM in the vicinity of a Mott transition is then shown to be a one-band Hubbard model, with effective hoppings that are not in general solely nearest neighbour, but decay exponentially with distance. This mapping is shown to have a range of implications for the physics of the problem, from phase boundaries to single-particle dynamics; all of which are confirmed and supplemented by NRG calculations. Finally we consider the locally degenerate, non-Fermi liquid Mott insulator, to describe which requires a two-self-energy description. This is shown to yield a number of exact results for the associated local moment, charge, and interaction-renormalised levels, together with a generalisation of Luttinger’s theorem to the Mott insulator. (paper)

Inhomogeneous field induced magnetoelectric effect in Mott insulators

Energy Technology Data Exchange (ETDEWEB)

Boulaevskii, Lev N [Los Alamos National Laboratory; Batista, Cristian D [Los Alamos National Laboratory

2008-01-01

We consider a Mott insulator like HoMnO{sub 3} whose magnetic lattice is geometrically frustrated and comprises a 3D array of triangular layers with magnetic moments ordered in a 120{sup o} structure. We show that the effect of a uniform magnetic field gradient, {gradient}H, is to redistribute the electronic charge of the magnetically ordered phase leading to a unfirom electric field gradient. The resulting voltage difference between the crystal edges is proportional to the square of the crystal thickness, or inter-edge distance, L. It can reach values of several volts for |{gradient}H| {approx} 0.01 T/cm and L {approx_equal} 1mm, as long as the crystal is free of antiferromagnetic domain walls.

Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory; Fuellungs- und wechselwirkungsabhaengiger Mott-Uebergang. Quanten-Cluster-Rechnungen im Rahmen der Selbstenergiefunktional-Theorie

Energy Technology Data Exchange (ETDEWEB)

Balzer, Matthias

2008-07-01

The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

Probing the spin-orbit Mott state in Sr3Ir2O7 by electron doping

Science.gov (United States)

Hogan, Thomas C.

Iridium-based members of the Ruddlesden-Popper family of oxide compounds are characterized by a unique combination of energetically comparable effects: crystal-field splitting, spin-orbit coupling, and electron-electron interactions are all present, and the combine to produce a Jeff = 1/2 ground state. In the bilayer member of this series, Sr3Ir2O7, this state manifests as electrically insulating, with unpaired Ir4+ spins aligned along the long axis of the unit cell to produce a G-type antiferromagnet with an ordered moment of 0.36 uB. In this work, this Mott state is destabilized by electron doping via La3+ substitution on the Sr-site to produce (Sr1-x Lax)3Ir2O7. The introduction of carriers initially causes nano-scale phase-separated regions to develop before driving a global insulator-to-metal transition at x=0.04. Coinciding with this transition is the disappearance of evidence of magnetic order in the system in either bulk magnetization or magnetic scattering experiments. The doping also enhances a structural order parameter observed in the parent compound at forbidden reciprocal lattice vectors. A more complete structural solution is proposed to account for this previously unresolved distortion, and also offers an explanation as to the anomalous net ferromagnetism seen prior in bulk measurements. Finally, spin dynamics are probed via a resonant x-ray technique to reveal evidence of spin-dimer-like behavior dominated by inter-plane interactions. This result supports a bond-operator treatment of the interaction Hamiltonian, and also explains the doping dependence of high temperature magnetic susceptibility.

A Mott-like State of Molecules

International Nuclear Information System (INIS)

Duerr, S.; Volz, T.; Syassen, N.; Bauer, D. M.; Hansis, E.; Rempe, G.

2006-01-01

We prepare a quantum state where each site of an optical lattice is occupied by exactly one molecule. This is the same quantum state as in a Mott insulator of molecules in the limit of negligible tunneling. Unlike previous Mott insulators, our system consists of molecules which can collide inelastically. In the absence of the optical lattice these collisions would lead to fast loss of the molecules from the sample. To prepare the state, we start from a Mott insulator of atomic 87Rb with a central region, where each lattice site is occupied by exactly two atoms. We then associate molecules using a Feshbach resonance. Remaining atoms can be removed using blast light. Our method does not rely on the molecule-molecule interaction properties and is therefore applicable to many systems

Mg-doped VO2 nanoparticles: hydrothermal synthesis, enhanced visible transmittance and decreased metal-insulator transition temperature.

Science.gov (United States)

Zhou, Jiadong; Gao, Yanfeng; Liu, Xinling; Chen, Zhang; Dai, Lei; Cao, Chuanxiang; Luo, Hongjie; Kanahira, Minoru; Sun, Chao; Yan, Liuming

2013-05-28

This paper reports the successful preparation of Mg-doped VO2 nanoparticles via hydrothermal synthesis. The metal-insulator transition temperature (T(c)) decreased by approximately 2 K per at% Mg. The Tc decreased to 54 °C with 7.0 at% dopant. The composite foils made from Mg-doped VO2 particles displayed excellent visible transmittance (up to 54.2%) and solar modulation ability (up to 10.6%). In addition, the absorption edge blue-shifted from 490 nm to 440 nm at a Mg content of 3.8 at%, representing a widened optical band gap from 2.0 eV for pure VO2 to 2.4 eV at 3.8 at% doping. As a result, the colour of the Mg-doped films was modified to increase their brightness and lighten the yellow colour over that of the undoped-VO2 film. A first principle calculation was conducted to understand how dopants affect the optical, Mott phase transition and structural properties of VO2.

Excitonic metal-insulator phase transition of the Mott type in compressed calcium

Science.gov (United States)

Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

2017-05-01

It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

Interplay of long-range and short-range Coulomb interactions in an Anderson-Mott insulator

Science.gov (United States)

Baćani, Mirko; Novak, Mario; Orbanić, Filip; Prša, Krunoslav; Kokanović, Ivan; Babić, Dinko

2017-07-01

In this paper, we tackle the complexity of coexisting disorder and Coulomb electron-electron interactions (CEEIs) in solids by addressing a strongly disordered system with intricate CEEIs and a screening that changes both with charge carrier doping level Q and temperature T . We report on an experimental comparative study of the T dependencies of the electrical conductivity σ and magnetic susceptibility χ of polyaniline pellets doped with dodecylbenzenesulfonic acid over a wide range. This material is special within the class of doped polyaniline by exhibiting in the electronic transport a crossover between a low-T variable range hopping (VRH) and a high-T nearest-neighbor hopping (NNH) well below room temperature. Moreover, there is evidence of a soft Coulomb gap ΔC in the disorder band, which implies the existence of a long-range CEEI. Simultaneously, there is an onsite CEEI manifested as a Hubbard gap U and originating in the electronic structure of doped polyaniline, which consists of localized electron states with dynamically varying occupancy. Therefore, our samples represent an Anderson-Mott insulator in which long-range and short-range CEEIs coexist. The main result of the study is the presence of a crossover between low- and high-T regimes not only in σ (T ) but also in χ (T ) , the crossover temperature T* being essentially the same for both observables over the entire doping range. The relatively large electron localization length along the polymer chains results in U being small, between 12 and 20 meV for the high and low Q , respectively. Therefore, the thermal energy at T* is sufficiently large to lead to an effective closing of the Hubbard gap and the consequent appearance of NNH in the electronic transport within the disorder band. ΔC is considerably larger than U , decreasing from 190 to 30 meV as Q increases, and plays the role of an activation energy in the NNH.

Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

Science.gov (United States)

Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

2013-03-01

By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

Exploring the doping dependence of the Mott transition on X-ray irradiated crystals of {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl

Energy Technology Data Exchange (ETDEWEB)

Koehler, Sebastian; Tutsch, Ulrich; Naji, Ammar; Lang, Michael [Physikalisches Institut, Goethe-Universitaet Frankfurt (Germany); Sasaki, Takahiko [Institute for Materials Research, Tohoku University, Aoba-ku, Sendai, Miyagi (Japan)

2011-07-01

The quasi two-dimensional organic charge-transfer salt {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl exhibits a rich pressure vs. temperature phase diagram, including Mott-insulating and metallic phases separated by a first order transition line. By applying moderate pressures of {proportional_to}30 MPa (300 bar), the ratio of the kinetic energy to the onsite Coulomb repulsion t/U can be changed sufficiently to cross this phase transition line. Our objective is to study the effect of carrier doping and the accompanying changes of the first-order transition line and its second-order critical endpoint. We used X-ray irradiation to introduce charge carriers into the material, doping it away from half filling. We present resistivity data for the temperature range 5 Kdoping levels and discuss the accompanied changes in the p-T-phase diagram.

Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory

International Nuclear Information System (INIS)

Balzer, Matthias

2008-01-01

The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

Thermally assisted ordering in Mott insulators

Science.gov (United States)

Sims, Hunter; Pavarini, Eva; Koch, Erik

2017-08-01

Landau theory describes phase transitions as the competition between energy and entropy: The ordered phase has lower energy, while the disordered phase has larger entropy. When heating the system, ordering is reduced entropically until it vanishes at the critical temperature. This picture implicitly assumes that the energy difference between the ordered and disordered phases does not change with temperature. We show that for orbital ordering in the Mott insulator KCuF3, this assumption fails qualitatively: entropy plays a negligible role, while thermal expansion energetically stabilizes the orbitally ordered phase to such an extent that no phase transition is observed. To understand this strong dependence on the lattice constant, we need to take into account the Born-Mayer repulsion between the ions. It is the latter, and not the Jahn-Teller elastic energy, which determines the magnitude of the distortion. This effect will be seen in all materials where the distortion expected from the Jahn-Teller mechanism is so large that the ions would touch. Our mechanism explains not only the absence of a phase transition in KCuF3, but even suggests the possibility of an inverted transition in closed-shell systems, where the ordered phase emerges only at high temperatures.

A pure Hubbard model with demonstrable pairing adjacent to the Mott-insulating phase

International Nuclear Information System (INIS)

Champion, J D; Long, M W

2003-01-01

We introduce a Hubbard model on a particular class of geometries, and consider the effect of doping the highly spin-degenerate Mott-insulating state with a microscopic number of holes in the extreme strong-coupling limit. The geometry is quite general, with pairs of atomic sites at each superlattice vertex, and a highly frustrated inter-atomic connectivity: the one-dimensional realization is a chain of edge-sharing tetrahedra. The sole model parameter is the ratio of intra-pair to inter-pair hopping matrix elements. If the intra-pair hopping is negligible then introducing a microscopic number of holes results in a ferromagnetic Nagaoka groundstate. Conversely, if the intra-pair hopping is comparable with the inter-pair hopping then the groundstate is low spin with short-ranged spin correlations. We exactly solve the correlated motion of a pair of holes in such a state and find that, in 1d and 2d, they form a bound pair on a length scale that increases with diminishing binding energy. This result is pertinent to the long-standing problem of hole motion in the CuO 2 planes of the high-temperature superconductors: we have rigorously shown that, on our frustrated geometry, the holes pair up and a short-ranged low-spin state is generated by hole motion alone

Mott-insulating phases in unidimensional multi-components fermionic cold atoms

International Nuclear Information System (INIS)

Nonne, Heloise

2011-01-01

This thesis is devoted to the investigation of the Mott insulating phases arising in one-dimensional multicomponent fermionic cold atoms systems. The first part of this work is the study of a model with alkaline-earth cold atoms with nuclear spin I = 1/2. Those atoms enjoy an additional orbital degree of freedom, due to the presence of a metastable excited state; they thus have a total of four components. Our investigation is carried at half-filling, at strong and at weak couplings by means of analytic methods (conformal theory, bosonization, refermionization, renormalisation group). We found that the zero temperature phase diagram of the system is very rich: it contains seven Mott insulating phases, among which three are particularly interesting, since they display a hidden order, related to the Haldane physics of the antiferromagnetic spin-1 Heisenberg chain. Our conclusions are checked against numerical simulations, that were carried out with the density matrix renormalization group (DMRG) algorithm for intermediate couplings. The comparison shows an adiabatic continuity between the different regimes. A similar study for a model of cold atoms with hyperfine spin-3/2 highlights the Haldane physics in the charge sector of the degrees of freedom, with an effective model given by an antiferromagnetic pseudo-spin-1 chain. This analysis provides us an opportunity to investigate the zero temperature properties of the SO(5) bilinear-bi-quadratic Heisenberg chain. We show the presence of two gapped phases: one is dimerized, the other has a hidden symmetry (Z 2 x Z 2 ) 2 and spin-3/2 edge states, and they are separated by a critical point that belongs to the SO(5) 1 universality class. Finally, we investigate half-integer hyperfine spin cold atoms systems with 2N components which generalized the results obtained for the hyperfine spin-3/2 model. This leads us to find an even/odd effect according to the parity of N, very similar to the even/odd effect of spin chains

Mott Transition of Fermionic Atoms in a Three-Dimensional Optical Trap

International Nuclear Information System (INIS)

Helmes, R. W.; Rosch, A.; Costi, T. A.

2008-01-01

We study theoretically the Mott metal-insulator transition for a system of fermionic atoms confined in a three-dimensional optical lattice and a harmonic trap. We describe an inhomogeneous system of several thousand sites using an adaptation of dynamical mean-field theory solved efficiently with the numerical renormalization group method. Above a critical value of the on-site interaction, a Mott-insulating phase appears in the system. We investigate signatures of the Mott phase in the density profile and in time-of-flight experiments

Parity violation and superconductivity in doped Mott insulators

International Nuclear Information System (INIS)

Khveshchenko, D.V.; Kogan, Ya.I.

1989-12-01

We study parity violating states of strongly correlated two-dimensional electronic systems. On the basis of mean field theory for the SU(2N)-symmetric generalization of the system involved we give the arguments supporting the existence of these states at a filling number different from one-half. We derive an effective Lagrangian describing the long wavelength dynamics of magnetic excitations and their interaction with charged spinless holes. We establish that the ground state of a doped system is superconducting and discuss the phenomenological manifestations of the parity violation. (author). 48 refs, 3 figs

Parity violation and superconductivity in doped Mott insulators

International Nuclear Information System (INIS)

Khveshchenko, D.Y.; Kogan, Y.I.

1990-01-01

The authors study parity violating states of strongly correlated two-dimensional electronic systems. On the basis of mean field theory for the SU(2N)-symmetric generalization of the system involved the authors give the arguments supporting the existence of these states at a filling number different from one-half. The authors derive an effective Lagrangian describing the long wavelength dynamics of magnetic excitations and their interaction with charged spinless holes. This paper establishes the ground state of a doped system is superconducting and discuss the phenomenological manifestations of the parity violation

Mott glass from localization and confinement

Science.gov (United States)

Chou, Yang-Zhi; Nandkishore, Rahul M.; Radzihovsky, Leo

2018-05-01

We study a system of fermions in one spatial dimension with linearly confining interactions and short-range disorder. We focus on the zero-temperature properties of this system, which we characterize using bosonization and the Gaussian variational method. We compute the static compressibility and ac conductivity, and thereby demonstrate that the system is incompressible, but exhibits gapless optical conductivity. This corresponds to a "Mott glass" state, distinct from an Anderson and a fully gapped Mott insulator, arising due to the interplay of disorder and charge confinement. We argue that this Mott glass phenomenology should persist to nonzero temperatures.

Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

KAUST Repository

Wang, Lingfei; Li, Yongfeng; Bera, Ashok; Ma, Chun; Jin, Feng; Yuan, Kaidi; Yin, Wanjian; David, Adrian; Chen, Wei; Wu, Wenbin; Prellier, Wilfrid; Wei, Suhuai; Wu, Tao

2015-01-01

in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing

Two-dimensional orbital ordering in d{sup 1} Mott insulator Sr{sub 2}VO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Viennois, R; Giannini, E; Teyssier, J; Elia, J; Van der Marel, D [DPMC, Universite de Geneve, 24 quai Ernest Ansermet, CH-1211 Geneve (Switzerland); Deisenhofer, J, E-mail: Romain.Viennois@unige.c [Institute of Physics, University of Augsburg, Augsburg (Germany)

2010-01-15

The Mott insulator Sr{sub 2}VO{sub 4} is a unique d{sup 1} two-dimensional compound exhibiting an orbital ordering transition. In addition to the orbital ordering transition at about 100 K, we discovered a ferromagnetic transition below 10 K, thus confirming the predictions of recent band structure calculations. The magnetic properties proved to be strongly sensitive to the material purity, the actual oxygen stoichiometry and the crystallographic parameters. An additional transition is observed at 125 K, which is believed to be due to structural modifications.

Superconductivity induced by extremely high pressures in organic Mott-insulator β'-(BEDT-TTF)2IBrCl

International Nuclear Information System (INIS)

Kano, M; Uchiyama, K; Taniguchi, H; Hedo, M; Matsubayashi, K; Uwatoko, Y

2009-01-01

Previous research revealed that, at a pressure of 8.2 GPa, β'-(BEDT-TTF)2ICl2 possesses the highest transition temperature (T C ) among the organic conductors[1]. In the present work, transport studies under extremely high pressure of up to 10.0 GPa, using a cubic anvil press are reported for a related material, β'-(BEDT-TTF)2IBrCl which is an organic Mott-insulator in ambient pressure. Superconductivity with the highest T c (8.5 K, onset) was observed at P = 8.6 GPa.

Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach

International Nuclear Information System (INIS)

Kuchinskii, E. Z.; Nekrasov, I. A.; Sadovskii, M. V.

2008-01-01

The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition

Angle-resolved photoemission spectroscopy of band tails in lightly doped cuprates

OpenAIRE

Alexandrov, A. S.; Reynolds, K.

2007-01-01

We amend ab initio strongly-correlated band structures by taking into account the band-tailing phenomenon in doped charge-transfer Mott-Hubbard insulators. We show that the photoemission from band tails accounts for sharp "quasi-particle" peaks, rapid loss of their intensities in some directions of the Brillouin zone ("Fermi-arcs") and high-energy "waterfall" anomalies as a consequence of matrix-element effects of disorder-localised states in the charge-transfer gap of doped cuprates.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

2016-01-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David

2016-09-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Two-magnon scattering in spin–orbital Mott insulator Ba2IrO4

International Nuclear Information System (INIS)

Tsuda, Shunsuke; Uji, Shinya; Okabe, Hirotaka; Isobe, Masaaki

2016-01-01

A spin–orbit induced Mott insulator Ba 2 IrO 4 with the pseudo-spin J eff = 1/2, showing an antiferromagnetic order (T N = 240 K), has been investigated by Raman spectroscopy. A broad peak with the B 1g symmetry is found in a wide temperature region up to 400 K, which is ascribed to the two-magnon scattering. From the peak position and width, the exchange coupling and the antiferromagnetic correlation length are estimated to be 590 cm −1 and 45 Å at 90 K, respectively. The results are compared with the antiferromagnet La 2 CuO 4 with the spin S = 1/2. We conclude that there is no significant difference in the short wavelength spin-excitation between the S = 1/2 and J eff = 1/2 systems. (author)

Two-Magnon Scattering in Spin-Orbital Mott Insulator Ba2IrO4

Science.gov (United States)

Tsuda, Shunsuke; Okabe, Hirotaka; Isobe, Masaaki; Uji, Shinya

2016-02-01

A spin-orbit induced Mott insulator Ba2IrO4 with the pseudo-spin Jeff = 1/2, showing an antiferromagnetic order (TN = 240 K), has been investigated by Raman spectroscopy. A broad peak with the B1g symmetry is found in a wide temperature region up to 400 K, which is ascribed to the two-magnon scattering. From the peak position and width, the exchange coupling and the antiferromagnetic correlation length are estimated to be 590 cm-1 and 45 Å at 90 K, respectively. The results are compared with the antiferromagnet La2CuO4 with the spin S = 1/2. We conclude that there is no significant difference in the short wavelength spin-excitation between the S = 1/2 and Jeff = 1/2 systems.

Polymorphous band structure model of gapping in the antiferromagnetic and paramagnetic phases of the Mott insulators MnO, FeO, CoO, and NiO

Science.gov (United States)

Trimarchi, Giancarlo; Wang, Zhi; Zunger, Alex

2018-01-01

The existence of band gaps in both the antiferromagnetic (AFM) and paramagnetic (PM) phases of the classic NaCl-structure Mott insulators MnO, FeO, CoO, and NiO is traditionally viewed and taught as a manifestation of strong correlation whereby insulation results from electrons moving across the lattice forming states with doubly occupied d orbitals on certain atomic sites and empty d orbitals on other sites. Within such theories, the gap of the AFM and PM phases of these oxides emerges even in the absence of spatial symmetry breaking. The need for such a correlated picture is partially based on the known failure of the commonly used band models for the PM phase that assume for such a spin disordered state the macroscopically averaged NaCl structure, where all transition metal (TM) sites are symmetry-equivalent (a monomorphous description), producing a gapless PM state with zero magnetic moments, in sharp conflict with experiment. Here, we seek to understand the minimum theoretical description needed to capture the leading descriptors of ground state Mott insulation in the classic, 3 d monoxide Mott systems—gapping and moment formation in the AFM and PM phase. As noted by previous authors, the spin-ordered AFM phase in these materials already shows in band theory a significant band gap when one doubles the NaCl unit cell by permitting different potentials for transition-metal atoms with different spins. For the spin-disordered PM phase, we allow analogously larger NaCl-type supercells where each TM site can have different spin direction and local bonding environments (i.e., disordered), yet the total spin is zero. Such a polymorphous description has the flexibility to acquire symmetry-breaking energy-lowering patterns that can lift the degeneracy of the d orbitals and develop large on-site magnetic moments without violating the global, averaged NaCl symmetry. Electrons are exchanged between spin-up and spin-down bands to create closed-shell insulating

Localization of holes near charged defects in orbitally degenerate, doped Mott insulators

Science.gov (United States)

Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

2018-05-01

We study the role of charged defects, disorder and electron-electron (e-e) interactions in a multiband model for t2g electrons in vanadium perovskites R1-xCaxVO3 (R = La,…,Y). By means of unrestricted Hartree-Fock calculations, we find that the atomic multiplet structure persists up to 50% Ca doping. Using the inverse participation number, we explore the degree of localization and its doping dependence for all electronic states. The observation of strongly localized wave functions is consistent with our conjecture that doped holes form spin-orbital polarons that are strongly bound to the charged Ca2+ defects. Interestingly, the long-range e-e interactions lead to a discontinuity in the wave function size across the chemical potential, where the electron removal states are more localized than the addition states.

Impact ionization processes in the steady state of a driven Mott-insulating layer coupled to metallic leads

Science.gov (United States)

Sorantin, Max E.; Dorda, Antonius; Held, Karsten; Arrigoni, Enrico

2018-03-01

We study a simple model of photovoltaic energy harvesting across a Mott-insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. We address, in particular, the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet dynamical mean-field theory treatment of the steady state with the so-called auxiliary master equation approach as impurity solver. We verify that an additional approximation, taking the self-energy diagonal in the Floquet indices, is appropriate for the parameter range we are considering.

Real-space visualization of remnant Mott gap and magnon excitations.

Science.gov (United States)

Wang, Y; Jia, C J; Moritz, B; Devereaux, T P

2014-04-18

We demonstrate the ability to visualize real-space dynamics of charge gap and magnon excitations in the Mott phase of the single-band Hubbard model and the remnants of these excitations with hole or electron doping. At short times, the character of magnetic and charge excitations is maintained even for large doping away from the Mott and antiferromagnetic phases. Doping influences both the real-space patterns and long timescales of these excitations with a clear carrier asymmetry attributable to particle-hole symmetry breaking in the underlying model. Further, a rapidly oscillating charge-density-wave-like pattern weakens, but persists as a visible demonstration of a subleading instability at half-filling which remains upon doping. The results offer an approach to analyzing the behavior of systems where momentum space is either inaccessible or poorly defined.

Temperature dependence of hole mobility in Mott insulators: Normal-state resistivity of high-T/sub c/ superconductors

International Nuclear Information System (INIS)

Kumar, N.

1989-01-01

We consider the diffusion of a hole injected in a Mott insulator described by a one-band Hubbard Hamiltonian at half-filling and in the atomic limit. The diffusion coefficient turns out to be temperature independent exactly giving 1/T dependence for the drift mobility via the Einstein relation. This is in marked disagreement with the (1/T)/sup 1/2/ dependence obtaining in the self-retracing path approximation at low temperatures. We note the possible relevance of our result to the linear T dependence of the normal-state resistivity observed in the high-T/sub c/ oxide superconductors

Effect of Sr doping on LaTiO3 thin films

International Nuclear Information System (INIS)

Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

2005-01-01

We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

Thouless energy as a unifying concept for Josephson junctions tuned through the Mott metal-insulator transition

Science.gov (United States)

Tahvildar-Zadeh, A. N.; Freericks, J. K.; Nikolić, B. K.

2006-05-01

The Thouless energy was introduced in the 1970s as a semiclassical energy for electrons diffusing through a finite-sized conductor. It turns out to be an important quantum-mechanical energy scale for many systems ranging from disordered metals to quantum chaos to quantum chromodynamics. In particular, it has been quite successful in describing the properties of Josephson junctions when the barrier is a diffusive normal-state metal. The Thouless energy concept can be generalized to insulating barriers by extracting an energy scale from the two-probe Kubo conductance of a strongly correlated electron system (metallic or insulating) via a generalized definition of the quantum-mechanical level spacing to many-body systems. This energy scale is known to determine the crossover from tunneling to Ohmic (thermally activated) transport in normal tunnel junctions. Here we use it to illustrate how the quasiclassical picture of transport in Josephson junctions is modified as the strongly correlated barrier passes through the Mott transition. Surprisingly, we find the quasiclassical form holds well beyond its putative realm of validity.

Core-level photoemission revealing the Mott transition

International Nuclear Information System (INIS)

Kim, Hyeong-Do; Noh, Han-Jin; Kim, K.H.; Oh, S.-J.

2005-01-01

Ru 3d core-level X-ray photoemission spectra of various ruthenates are examined. They show in general two-peak structures, which can be assigned as the screened and unscreened peaks. The screened peak is absent in a Mott insulator, but develops into a main peak as the correlation strength becomes weak. This spectral behavior is well explained by the dynamical mean-field theory calculation for the single-band Hubbard model with the on-site core-hole potential using the exact diagonalization method. The new mechanism of the core-level photoemission satellite can be utilized to reveal the Mott transition phenomenon in various strongly correlated electron systems

Effects of pressure on doped Kondo insulators

International Nuclear Information System (INIS)

Lee, Chengchung; Xu, Wang

1999-08-01

The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)

High-pressure versus isoelectronic doping effect on the honeycomb iridate Na2IrO3

Science.gov (United States)

Hermann, V.; Ebad-Allah, J.; Freund, F.; Pietsch, I. M.; Jesche, A.; Tsirlin, A. A.; Deisenhofer, J.; Hanfland, M.; Gegenwart, P.; Kuntscher, C. A.

2017-11-01

We study the effect of isoelectronic doping and external pressure in tuning the ground state of the honeycomb iridate Na2IrO3 by combining optical spectroscopy with synchrotron x-ray diffraction measurements on single crystals. The obtained optical conductivity of Na2IrO3 is discussed in terms of a Mott-insulating picture versus the formation of quasimolecular orbitals and in terms of Kitaev interactions. With increasing Li content x , (Na1 -xLix )2IrO3 moves deeper into the Mott-insulating regime, and there are indications that up to a doping level of 24% the compound comes closer to the Kitaev limit. The optical conductivity spectrum of single-crystalline α -Li2IrO3 does not follow the trends observed for the series up to x =0.24 . There are strong indications that α -Li2IrO3 is not as close to the Kitaev limit as Na2IrO3 and lies closer to the quasimolecular orbital picture instead. Except for the pressure-induced hardening of the phonon modes, the optical properties of Na2IrO3 seem to be robust against external pressure. Possible explanations of the unexpected evolution of the optical conductivity with isolectronic doping and the drastic change between x =0.24 and x =1 are given by comparing the pressure-induced changes of lattice parameters and the optical conductivity with the corresponding changes induced by doping.

The Mott localization and magnetic properties in condensed fermions systems

International Nuclear Information System (INIS)

Wojcik, W.

1995-01-01

In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

Energy Technology Data Exchange (ETDEWEB)

Achatz, Philipp

2009-05-15

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

International Nuclear Information System (INIS)

Achatz, Philipp

2009-01-01

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

International Nuclear Information System (INIS)

Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

2015-01-01

We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

Growth of semi-insulating InP through nuclear doping

International Nuclear Information System (INIS)

Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

2012-01-01

Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

Mott Transition In Strongly Correlated Materials: Many-Body Methods And Realistic Materials Simulations

Science.gov (United States)

Lee, Tsung-Han

Strongly correlated materials are a class of materials that cannot be properly described by the Density Functional Theory (DFT), which is a single-particle approximation to the original many-body electronic Hamiltonian. These systems contain d or f orbital electrons, i.e., transition metals, actinides, and lanthanides compounds, for which the electron-electron interaction (correlation) effects are too strong to be described by the single-particle approximation of DFT. Therefore, complementary many-body methods have been developed, at the model Hamiltonians level, to describe these strong correlation effects. Dynamical Mean Field Theory (DMFT) and Rotationally Invariant Slave-Boson (RISB) approaches are two successful methods that can capture the correlation effects for a broad interaction strength. However, these many-body methods, as applied to model Hamiltonians, treat the electronic structure of realistic materials in a phenomenological fashion, which only allow to describe their properties qualitatively. Consequently, the combination of DFT and many body methods, e.g., Local Density Approximation augmented by RISB and DMFT (LDA+RISB and LDA+DMFT), have been recently proposed to combine the advantages of both methods into a quantitative tool to analyze strongly correlated systems. In this dissertation, we studied the possible improvements of these approaches, and tested their accuracy on realistic materials. This dissertation is separated into two parts. In the first part, we studied the extension of DMFT and RISB in three directions. First, we extended DMFT framework to investigate the behavior of the domain wall structure in metal-Mott insulator coexistence regime by studying the unstable solution describing the domain wall. We found that this solution, differing qualitatively from both the metallic and the insulating solutions, displays an insulating-like behavior in resistivity while carrying a weak metallic character in its electronic structure. Second, we

Orbital-selective Mott phase of Cu-substituted iron-based superconductors

International Nuclear Information System (INIS)

Liu, Yang; Zhao, Yang-Yang; Song, Yun

2016-01-01

We study the phase transition in Cu-substituted iron-based superconductors with a new developed real-space Green’s function method. We find that Cu substitution has strong effect on the orbital-selective Mott transition introduced by the Hund’s rule coupling. The redistribution of the orbital occupancy which is caused by the increase of the Hund’s rule coupling, gives rise to the Mott–Hubbard metal-insulator transition in the half-filled d xy orbital. We also find that more and more electronic states appear inside that Mott gap of the d xy orbital with the increase of Cu substitution, and the in-gap states around the Fermi level are strongly localized at some specific lattice sites. Further, a distinctive phase diagram, obtained for the Cu-substituted Fe-based superconductors, displays an orbital-selective insulating phase, as a result of the cooperative effect of the Hund’s rule coupling and the impurity-induced disorder. (paper)

Collective excitations and the nature of Mott transition in undoped gapped graphene

International Nuclear Information System (INIS)

Jafari, S A

2012-01-01

The particle-hole continuum (PHC) for massive Dirac fermions provides an unprecedented opportunity for the formation of two collective split-off states, one in the singlet and the other in the triplet (spin-1) channel, when the short-range interactions are added to the undoped system. Both states are close in energy and are separated from the continuum of free particle-hole excitations by an energy scale of the order of the gap parameter Δ. They both disperse linearly with two different velocities, reminiscent of spin-charge separation in Luttinger liquids. When the strength of Hubbard interactions is stronger than a critical value, the velocity of singlet excitation, which we interpret as a charge composite boson, becomes zero and renders the system a Mott insulator. Beyond this critical point the low-energy sector is left with a linearly dispersing triplet mode - a characteristic of a Mott insulator. The velocity of the triplet mode at the Mott criticality is twice the velocity of the underlying Dirac fermions. The phase transition line in the space of U and Δ is in qualitative agreement with our previous dynamical mean field theory calculations. (paper)

Characteristics of the Mott transition and electronic states of high-temperature cuprate superconductors from the perspective of the Hubbard model

Science.gov (United States)

Kohno, Masanori

2018-04-01

A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy charge excitation) in a Mott insulator. This issue has attracted considerable attention particularly in relation to high-temperature cuprate superconductors, which exhibit electronic states near the Mott transition that are difficult to explain in conventional pictures. Here, from a new viewpoint of the Mott transition based on analyses of the Hubbard model, we review anomalous features observed in high-temperature cuprate superconductors near the Mott transition.

Nearest-neighbor Kitaev exchange blocked by charge order in electron doped $\\alpha$-RuCl$_{3}$

OpenAIRE

Koitzsch, A.; Habenicht, C.; Mueller, E.; Knupfer, M.; Buechner, B.; Kretschmer, S.; Richter, M.; Brink, J. van den; Boerrnert, F.; Nowak, D.; Isaeva, A.; Doert, Th.

2017-01-01

A quantum spin-liquid might be realized in $\\alpha$-RuCl$_{3}$, a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, $\\alpha$-RuCl$_{3}$ is a Mott insulator, which implies the possibility that novel exotic phases occur upon doping. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spectroscopy, and density functional theory calculations. We obtain a stable stoichiometry...

Charge partitioning and anomalous hole doping in Rh-doped ${\mathrm{Sr}}_2{\mathrm{IrO}}_4$

Energy Technology Data Exchange (ETDEWEB)

Chikara, S.; Fabbris, G.; Terzic, J.; Cao, G.; Khomskii, D.; Haskel, D.

2017-02-01

The simultaneous presence of sizable spin-orbit interactions and electron correlations in iridium oxides has led to predictions of novel ground states including Dirac semimetals, Kitaev spin liquids, and superconductivity. Electron and hole doping studies of spin-orbit assisted Mott insulator Sr2IrO4 are being intensively pursued due to extensive parallels with the La2CuO4 parent compound of cuprate superconductors. In particular, the mechanism of charge doping associated with replacement of Ir with Rh ions remains controversial with profound consequences for the interpretation of electronic structure and transport data. Using x-ray absorption near edge structure measurements at the Rh L, K, and Ir L edges we observe anomalous evolution of charge partitioning between Rh and Ir with Rh doping. The partitioning of charge between Rh and Ir sites progresses in a way that holes are initially doped into the J(eff) = 1/2 band at low x only to be removed from it at higher x values. This anomalous hole doping naturally explains the reentrant insulating phase in the phase diagram of Sr2Ir1-x Rh-x O-4 and ought to be considered when searching for superconductivity and other emergent phenomena in iridates doped with 4d elements.

Mott-Schottky analysis of thin ZnO films

International Nuclear Information System (INIS)

Windisch, Charles F. Jr.; Exarhos, Gregory J.

2000-01-01

Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

Microscopic effects of Dy doping in the topological insulator Bi2Te3

Science.gov (United States)

Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

2018-05-01

Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

Electric controlling of surface metal-insulator transition in the doped BaTiO3 film

Directory of Open Access Journals (Sweden)

Wei Xun

2017-07-01

Full Text Available Based on first-principles calculations, the BaTiO3(BTO film with local La-doping is studied. For a selected concentration and position of doping, the surface metal-insulator transition occurs under the applied electric field, and the domain appears near the surface for both bipolar states. Furthermore, for the insulated surface state, i.e., the downward polarization state in the doped film, the gradient bandgap structure is achieved, which favors the absorption of solar energy. Our investigation can provide an alternative avenue in modification of surface property and surface screening effect in polar materials.

Metal-insulator transitions in IZO, IGZO, and ITZO films

Energy Technology Data Exchange (ETDEWEB)

Makise, Kazumasa, E-mail: makise@nict.go.jp [National Institute of Information and Communications Technology, Kobe 651-2492 (Japan); Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju [Department of Physics, Kyushu University, Fukuoka 810-8560 (Japan); Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki [Central Research Laboratories, Idemitsu Kosan Co. Ltd, Chiba 299-0293 (Japan)

2014-10-21

In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

Filling-driven Mott transition in SU(N ) Hubbard models

Science.gov (United States)

Lee, Seung-Sup B.; von Delft, Jan; Weichselbaum, Andreas

2018-04-01

We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU (N ) Fermi-Hubbard models, using the dynamical mean-field theory and the numerical renormalization group as its impurity solver. The compressibility shows a striking temperature dependence: near the critical end-point temperature, it is strongly enhanced in the metallic phase close to the insulating phase. We demonstrate that this compressibility enhancement is associated with the thermal suppression of the quasiparticle peak in the local spectral functions. We also explain that the asymmetric shape of the quasiparticle peak originates from the asymmetry in the dynamics of the generalized doublons and holons.

Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

Directory of Open Access Journals (Sweden)

Swagata Acharya

2018-05-01

Full Text Available High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La_{2}CuO_{4} (LCO with Sr (LSCO, or electron doped, such as Nd_{2}CuO_{4} (NCO with Ce (NCCO. In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW and dynamical mean-field theory (DMFT, we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d-wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between T_{c} and the charge transfer gap, while also providing a guide towards the design of optimized high-T_{c} superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-T_{c} superconductivity.

High temperature superconductors at optimal doping

Directory of Open Access Journals (Sweden)

W. E. Pickett

2006-09-01

Full Text Available   Intensive study of the high temperature superconductors has been ongoing for two decades. A great deal of this effort has been devoted to the underdoped regime, where the new and difficult physics of the doped Mott insulator has met extra complications including bilayer coupling/splitting, shadow bands, and hot spots. While these complications continue to unfold, in this short overview the focus is moved to the region of actual high-Tc, that of optimal doping. The focus here also is not on the superconducting state itself, but primarily on the characteristics of the normal state from which the superconducting instability arises, and even these can be given only a broad-brush description. A reminder is given of two issues,(i why the “optimal Tc” varies,for n-layered systems it increases for n up to 3, then decreases for a given n, Tc increases according to the ‘basis’ atom in the order Bi, Tl, Hg (ii how does pressure, or a particular uniaxial strain, increase Tc when the zero-strain system is already optimally doped?

Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

Directory of Open Access Journals (Sweden)

G. Baskaran

2006-01-01

Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

Optical Study of Electron-Doped Cuprate Pr1.3-xLa0.7CexCuO4+δ in Under-Doped Regime: Revisit the Phase Diagram

Science.gov (United States)

Ohnishi, Ryota; Nakajima, Masamichi; Miyasaka, Shigeki; Tajima, Setsuko; Adachi, Tadashi; Ohgi, Taro; Takahashi, Akira; Koike, Yoji

2018-04-01

A recent progress of reduction process for electron-doped cuprates enabled us to get superconducting samples at very low doping levels. In order to clarify the electronic state of strongly reduced Pr1.3-xLa0.7CexCuO4+δ (x = 0.05, 0.10) which exhibit high Tc (˜27 K) superconductivity, we have measured their optical spectra. The reflectivity of these samples was found much higher than the published data for the moderately reduced and non-superconducting samples with the same Ce concentrations. Moreover, the estimated effective electron numbers Neff for x = 0.05 and 0.10 were close to that of the optimally doped and superconducting sample with x = 0.15. Given that the parent compound is a Mott insulator, these results indicate that in the electron-doped cuprates only a small amount of carrier doping changes the system to a high Tc superconductor with a large Fermi surface. At low temperatures, a broad mid-infrared peak appeared even in the superconducting samples.

Effects of Disorder on the Pressure-Induced Mott Transition in κ-(BEDT-TTF2Cu[N(CN2]Cl

Directory of Open Access Journals (Sweden)

Elena Gati

2018-01-01

Full Text Available We present a study of the influence of disorder on the Mott metal-insulator transition for the organic charge-transfer salt κ -(BEDT-TTF 2 Cu[N(CN 2 ]Cl. To this end, disorder was introduced into the system in a controlled way by exposing the single crystals to X-ray irradiation. The crystals were then fine-tuned across the Mott transition by the application of continuously controllable He-gas pressure at low temperatures. Measurements of the thermal expansion and resistance show that the first-order character of the Mott transition prevails for low irradiation doses achieved by irradiation times up to 100 h. For these crystals with a moderate degree of disorder, we find a first-order transition line which ends in a second-order critical endpoint, akin to the pristine crystals. Compared to the latter, however, we observe a significant reduction of both, the critical pressure p c and the critical temperature T c . This result is consistent with the theoretically-predicted formation of a soft Coulomb gap in the presence of strong correlations and small disorder. Furthermore, we demonstrate, similar to the observation for the pristine sample, that the Mott transition after 50 h of irradiation is accompanied by sizable lattice effects, the critical behavior of which can be well described by mean-field theory. Our results demonstrate that the character of the Mott transition remains essentially unchanged at a low disorder level. However, after an irradiation time of 150 h, no clear signatures of a discontinuous metal-insulator transition could be revealed anymore. These results suggest that, above a certain disorder level, the metal-insulator transition becomes a smeared first-order transition with some residual hysteresis.

Electronic correlations in hole- and electron-doped Fe-based superconductors

Science.gov (United States)

Hardy, Frederic; Boehmer, Anna; Schweiss, Peter; Wolf, Thomas; Heid, Rolf; Eder, Robert; Fisher, Robert A.; Meingast, Christoph

2015-03-01

High-temperature superconductivity in the cuprates occurs at the crossover from a highly-correlated Mott insulating state to a weaker correlated Fermi liquid as a function of hole doping. The iron pnictides were initially thought to be fairly weakly correlated. However, we have recently shown using transport and thermodynamic measurements that KFe2As2 is strongly correlated. Both the Sommerfeld coefficient and the Pauli susceptibility are strongly enhanced with respect to their bare DFT values. These correlations are even further enhanced in RbFe2As2andCsFe2As2. The temperature dependence of both the susceptibility and the thermal expansion provides strong experimental evidence for the existence of a coherence-incoherence crossover; similar to what is found in heavy-fermion compounds. Whereas the correlations in the cuprates result from a large value of the Hubbard U, recent works have stressed the particular relevance of Hund's coupling in the pnictides. Our data may be interpreted in terms of a close proximity of KFe2As2 to an orbital-selective Mott transition. We now have good thermodynamic data covering both the hole and electron sides of the BaFe2As2 system and we will discuss how these correlations are modified by doping.

Metal–insulator transition in Ni-doped Na0.75CoO2: Insights from ...

Indian Academy of Sciences (India)

resistivity on lowering the temperature, with the metal-to-insulator transition temperature. (TMIT) increasing with the Ni ... The Ni-doped sample is seen to change over from a metallic to insulating behaviour at ~175 K. The ..... neutron diffraction to look for structural changes, viz., changes in bond lengths and site occupancies ...

Doping the Copper-Oxygen Planes with Electrons: The View with Photoemission

Energy Technology Data Exchange (ETDEWEB)

Armitage, Norman P.

2002-03-07

The undoped parent compounds of high-temperature cuprate superconductors are known to be antiferromagnetic Mott insulators. As the CuO{sub 2} planes are doped with charge carriers, the antiferromagnetic phase subsides and superconductivity emerges. The symmetry, or the lack thereof, between doping with electrons (n-type) or holes (p-type) has important theoretical implications as most models implicitly assume symmetry. However, most of what we know about these superconductors comes from experiments performed on p-type materials. The much fewer number of measurements from n-type compounds suggest that there may be both commonalities and differences between the two sides of the phase diagram. This issue of electron/hole symmetry has not been seriously discussed, perhaps, because the experimental database of n-type results is very limited.

Boson localization and the superfluid-insulator transition

International Nuclear Information System (INIS)

Fisher, M.P.A.; Weichman, P.B.; Grinstein, G.; Fisher, D.S.; Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598; Joseph Henry Laboratory of Physics, Jadwin Hall, Princeton University, Princeton, New Jersey 08544)

1989-01-01

The phase diagrams and phase transitions of bosons with short-ranged repulsive interactions moving in periodic and/or random external potentials at zero temperature are investigated with emphasis on the superfluid-insulator transition induced by varying a parameter such as the density. Bosons in periodic potentials (e.g., on a lattice) at T=0 exhibit two types of phases: a superfluid phase and Mott insulating phases characterized by integer (or commensurate) boson densities, by the existence of a gap for particle-hole excitations, and by zero compressibility. Generically, the superfluid onset transition in d dimensions from a Mott insulator to superfluidity is ''ideal,'' or mean field in character, but at special multicritical points with particle-hole symmetry it is in the universality class of the (d+1)-dimensional XY model. In the presence of disorder, a third, ''Bose glass'' phase exists. This phase is insulating because of the localization effects of the randomness and analogous to the Fermi glass phase of interacting fermions in a strongly disordered potential

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

International Nuclear Information System (INIS)

Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

2005-01-01

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Resolving the chicken-and-egg problem in VO2: a new paradigm for the Mott transition

Science.gov (United States)

Najera, Oscar; Civelli, Marcello; Dobrosavljevi, Vladimir; Rozenberg, Marcelo

We consider a minimal model to investigate the metal-insulator transition in VO2. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO2 is entirely compatible with a Mott electronic mechanism, solving a long standing ''chicken-and-egg'' debate and calling for further research of ``Mottronics'' applications of this system. This work was partially supported by public Grants from the French National Research Agency (ANR), project LACUNES No ANR-13-BS04-0006-01, the NSF DMR-1005751 and DMR-1410132.

Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide

Science.gov (United States)

Hardy, Will J.; Ji, Heng; Paik, Hanjong; Schlom, Darrell G.; Natelson, Douglas

2017-05-01

The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov-Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimensionalities. We report apparent WLMR and conductance fluctuations in H x VO2, a poor metal (in violation of the Mott-Ioffe-Regel limit) stabilized by the suppression of the VO2 metal-insulator transition through atomic hydrogen doping. Epitaxial thin films, single-crystal nanobeams, and nanosheets show similar phenomenology, though the details of the apparent WLMR seem to depend on the combined effects of the strain environment and presumed doping level. Self-consistent quantitative analysis of the WLMR is challenging given this and the high resistivity of the material, since the quantitative expressions for WLMR are derived assuming good metallicity. These observations raise the issue of how to assess and analyze mesoscopic quantum effects in poor metals.

Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

Energy Technology Data Exchange (ETDEWEB)

Ritz, Elvira

2009-06-04

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

Wide gap Chern Mott insulating phases achieved by design

Science.gov (United States)

Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

2017-12-01

Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

Peculiar ferromagnetic insulator state in the low-hole-doped manganites

International Nuclear Information System (INIS)

Algarabel, P.A.; Teresa, J.M. de; Blasco, J.; Ibarra, M.R.; Kapusta, Cz.; Sikora, M.; Zajac, D.; Riedi, P.C.; Ritter, C.

2003-01-01

In this work we show the very different nature of the ferromagnetic state of the low-hole-doped manganites with respect to other manganites showing colossal magnetoresistance. High-field measurements definitively prove the coexistence of ferromagnetic-metallic and ferromagnetic-insulating regions even when the sample is magnetically saturated, with the ground state being inhomogeneous. We have investigated La 0.9 Ca 0.1 MnO 3 as a prototype compound. A wide characterization by means of magnetic and magnetotransport measurements, neutron diffraction, small-angle neutron scattering, and nuclear magnetic resonance has allowed us to establish that the ground state is based on the existence of disordered nanometric double-exchange metallic clusters that coexist with long-range superexchange-based ferromagnetic insulating regions. Under high magnetic field the system reaches magnetization saturation by aligning the magnetic clusters and the insulating matrix, but even if they grow in size, they do not reach the percolation limit

The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

Energy Technology Data Exchange (ETDEWEB)

Wojcik, W. [Politechnika Krakowska, Cracow (Poland)

1995-12-31

In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

Energy Technology Data Exchange (ETDEWEB)

Wojcik, W [Politechnika Krakowska, Cracow (Poland)

1996-12-31

In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

Metal-insulator transitions

Science.gov (United States)

Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

1998-10-01

Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

The happy marriage between electron-phonon superconductivity and Mott physics in Cs3C60: A first-principle phase diagram

Science.gov (United States)

Capone, Massimo; Nomura, Yusuke; Sakai, Shiro; Giovannetti, Gianluca; Arita, Ryotaro

The phase diagram of doped fullerides like Cs3C60 as a function of the spacing between fullerene molecules is characterized by a first-order transition between a Mott insulator and an s-wave superconductor with a dome-shaped behavior of the critical temperature. By means of an ab-initio modeling of the bandstructure, the electron-phonon interaction and the interaction parameter and a Dynamical Mean-Field Theory solution, we reproduce the phase diagram and demonstrate that phonon superconductivity benefits from strong correlations confirming earlier model predictions. The role of correlations is manifest also in infrared measurements carried out by L. Baldassarre. The superconducting phase shares many similarities with ''exotic'' superconductors with electronic pairing, suggesting that the anomalies in the ''normal'' state, rather than the pairing glue, can be the real common element unifying a wide family of strongly correlated superconductors including cuprates and iron superconductors

NSF-DMR Highlight from NHMFL-PFF 2017

Energy Technology Data Exchange (ETDEWEB)

Mielke, Charles H. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-07-12

The alkali-doped fullerides provide the first example of a transition from a three-dimensional Mott insulator to a superconductor, enabling the effects of both dimensionality and electron correlations on superconductivity to be explored. Chemically, the alkali species tunes the superconductivity in the vicinity of the Mott transition by varying the unit cell volume.

On metal-insulator transition in cubic fullerides

Science.gov (United States)

Iwahara, Naoya; Chibotaru, Liviu

The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

Science.gov (United States)

Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

2018-04-18

The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

Science.gov (United States)

Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

2018-04-01

The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

Finite-temperature dynamics of the Mott insulating Hubbard chain

Science.gov (United States)

Nocera, Alberto; Essler, Fabian H. L.; Feiguin, Adrian E.

2018-01-01

We study the dynamical response of the half-filled one-dimensional Hubbard model for a range of interaction strengths U and temperatures T by a combination of numerical and analytical techniques. Using time-dependent density matrix renormalization group computations we find that the single-particle spectral function undergoes a crossover to a spin-incoherent Luttinger liquid regime at temperatures T ˜J =4 t2/U for sufficiently large U >4 t . At smaller values of U and elevated temperatures the spectral function is found to exhibit two thermally broadened bands of excitations, reminiscent of what is found in the Hubbard-I approximation. The dynamical density-density response function is shown to exhibit a finite-temperature resonance at low frequencies inside the Mott gap, with a physical origin similar to the Villain mode in gapped quantum spin chains. We complement our numerical computations by developing an analytic strong-coupling approach to the low-temperature dynamics in the spin-incoherent regime.

Excitons in insulators

International Nuclear Information System (INIS)

Grasser, R.; Scharmann, A.

1983-01-01

This chapter investigates absorption, reflectivity, and intrinsic luminescence spectra of free and/or self-trapped (localized) excitons in alkali halides and rare gas solids. Introduces the concepts underlying the Wannier-Mott and Frenkel exciton models, two extreme pictures of an exciton in crystalline materials. Discusses the theoretical and experimental background; excitons in alkali halides; and excitons in rare gas solids. Shows that the intrinsic optical behavior of wide gap insulators in the range of the fundamental absorption edge is controlled by modified Wannier-Mott excitons. Finds that while that alkali halides only show free and relaxed molecular-like exciton emission, in rare gas crystals luminescence due to free, single and double centered localized excitons is observed. Indicates that the simultaneous existence of free and self-trapped excitons in these solid requires an energy barrier for self-trapping

Ferromagnetism in the two-dimensional periodic Anderson model

International Nuclear Information System (INIS)

Batista, C. D.; Bonca, J.; Gubernatis, J. E.

2001-01-01

Using the constrained-path Monte Carlo method, we studied the magnetic properties of the two-dimensional periodic Anderson model for electron fillings between 1/4 and 1/2. We also derived two effective low-energy theories to assist in interpreting the numerical results. For 1/4 filling, we found that the system can be a Mott or a charge-transfer insulator, depending on the relative values of the Coulomb interaction and the charge-transfer gap between the two noninteracting bands. The insulator may be a paramagnet or antiferromagnet. We concentrated on the effect of electron doping on these insulating phases. Upon doping we obtained a partially saturated ferromagnetic phase for low concentrations of conduction electrons. If the system were a charge-transfer insulator, we would find that the ferromagnetism is induced by the well-known Ruderman-Kittel-Kasuya-Yosida interaction. However, we found a novel correlated hopping mechanism inducing the ferromagnetism in the region where the nondoped system is a Mott insulator. Our regions of ferromagnetism spanned a much smaller doping range than suggested by recent slave boson and dynamical mean-field theory calculations, but they were consistent with that obtained by density-matrix renormalization group calculations of the one-dimensional periodic Anderson model

Stability of the antiferromagnetic state in the electron doped iridates

Science.gov (United States)

Bhowal, Sayantika; Moradi Kurdestany, Jamshid; Satpathy, Sashi

2018-06-01

Iridates such as Sr2IrO4 are of considerable interest owing to the formation of the Mott insulating state driven by a large spin–orbit coupling. However, in contrast to the expectation from the Nagaoka theorem that a single doped hole or electron destroys the anti-ferromagnetic (AFM) state of the half-filled Hubbard model in the large U limit, the anti-ferromagnetism persists in the doped Iridates for a large dopant concentration beyond half-filling. With a tight-binding description of the relevant states by the third-neighbor (t 1, t 2, t 3, U) Hubbard model on the square lattice, we examine the stability of the AFM state to the formation of a spin spiral state in the strong coupling limit. The third-neighbor interaction t 3 is important for the description of the Fermi surface of the electron doped system. A phase diagram in the parameter space is obtained for the regions of stability of the AFM state. Our results qualitatively explain the robustness of the AFM state in the electron doped iridate (such as Sr2‑x La x IrO4), observed in many experiments, where the AFM state continues to be stable until a critical dopant concentration.

Screening dynamics in doped titanates

Energy Technology Data Exchange (ETDEWEB)

Rubensson, J.E.; Luening, J.; Eisebitt, S. [Forschungszentrum Juelich (Germany)] [and others

1997-04-01

The time scale for carrier relaxation in semiconductors is on the same order of magnitude as the life time of shallow core hole states (a few femtoseconds). Resonant Inelastic soft X-ray scattering (RIXS) which involves (virtual) excitations of core levels consequently contains information about the time development of the electronic structure on this time scale. In many cases one can treat the scattering in an absorption (SXA) followed-by-emission (SXE) picture, where simply the rates for various processes can be compared with the intermediate core hole state decay rate as an internal {open_quotes}clock{close_quotes}. By variation of x (0 < x < 1) in La{sub x}Sr{sub 1{minus}x}TiO{sub 3}, the amount of Ti d electrons in the system can be controlled. SrTiO{sub 3} (x=0) is an insulator with an empty Ti d band. With increasing x, electrons are doped into the Ti d-band, and LaTiO{sub 3} (x=1) is a Mott Hubbard insulator with a Ti 3d{sup 1} configuration. In this work the authors demonstrate that the rate for Ti 2p core hole screening in La{sub x}Sr{sub 1{minus}x}TiO{sub 3} is doping dependent. The screening rate increases with the availability of Ti 3d electrons, and they estimate it to be 3.8 x 10{sup 13}/sec in La{sub 0.05}Sr{sub 0.95}TiO{sub 3}.

Theoretical studies of superconductivity in doped BaCoSO

Science.gov (United States)

Qin, Shengshan; Li, Yinxiang; Zhang, Qiang; Le, Congcong; Hu, Jiangping

2018-06-01

We investigate superconductivity that may exist in the doped BaCoSO, a multi-orbital Mott insulator with a strong antiferromagnetic ground state. The superconductivity is studied in both t-J type and Hubbard type multi-orbital models by mean field approach and random phase approximation (RPA) analysis. Even if there is no C 4 rotational symmetry, it is found that the system still carries a d-wave like pairing symmetry state with gapless nodes and sign changed superconducting order parameters on Fermi surfaces. The results are largely doping insensitive. In this superconducting state, the three {t_{{2_g}}} orbitals have very different superconducting form factors in momentum space. In particular, the intra-orbital pairing of the {d_{{x^2} - {y^2}}} orbital has an s-wave like pairing form factor. The two methods also predict very different pairing strength on different parts of Fermi surfaces. These results suggest that BaCoSO and related materials can be a new ground to test and establish fundamental principles for unconventional high temperature superconductivity.

Quantum Critical “Opalescence” around Metal-Insulator Transitions

Science.gov (United States)

Misawa, Takahiro; Yamaji, Youhei; Imada, Masatoshi

2006-08-01

Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transition emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical temperatures can be lowered to zero, which offers a challenging quantum phase transition. We present a microscopic description of such quantum critical phenomena in two dimensions. The conventional scheme of phase transitions by Ginzburg, Landau, and Wilson is violated because of its topological nature. It offers a clear insight into the criticalities of metal-insulator transitions (MIT) associated with Mott or charge-order transitions. Fermi degeneracy involving the diverging density fluctuations generates emergent phenomena near the endpoint of the first-order MIT and must shed new light on remarkable phenomena found in correlated metals such as unconventional cuprate superconductors. It indeed accounts for the otherwise puzzling criticality of the Mott transition recently discovered in an organic conductor. We propose to accurately measure enhanced dielectric fluctuations at small wave numbers.

Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-11-02

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

Science.gov (United States)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Electronic Correlations, Jahn-Teller Distortions and Mott Transition to Superconductivity in Alkali-C60 Compounds

Directory of Open Access Journals (Sweden)

Alloul H.

2012-03-01

Full Text Available The discovery in 1991 of high temperature superconductivity (SC in A3C60 compounds, where A is an alkali ion, has been rapidly ascribed to a BCS mechanism, in which the pairing is mediated by on ball optical phonon modes. While this has lead to consider that electronic correlations were not important in these compounds, further studies of various AnC60 with n=1, 2, 4 allowed to evidence that their electronic properties cannot be explained by a simple progressive band filling of the C60 six-fold degenerate t1u molecular level. This could only be ascribed to the simultaneous influence of electron correlations and Jahn-Teller Distortions (JTD of the C60 ball, which energetically favour evenly charged C60 molecules. This is underlined by the recent discovery of two expanded fulleride Cs3C60 isomeric phases which are Mott insulators at ambient pressure. Both phases undergo a pressure induced first order Mott transition to SC with a (p, T phase diagram displaying a dome shaped SC, a common situation encountered nowadays in correlated electron systems. NMR experiments allowed us to study the magnetic properties of the Mott phases and to evidence clear deviations from BCS expectations near the Mott transition. So, although SC involves an electron-phonon mechanism, the incidence of electron correlations has an importance on the electronic properties, as had been anticipated from DMFT calculations.

Transformation of the superconducting gap to an insulating pseudogap at a critical hole density in the cuprates

Science.gov (United States)

Liu, Ye-Hua; Wang, Wan-Sheng; Wang, Qiang-Hua; Zhang, Fu-Chun; Rice, T. M.

2017-07-01

We apply the recent wave-packet formalism developed by Ossadnik to describe the origin of the short-range ordered pseudogap state as the hole doping is lowered through a critical density in cuprates. We argue that the energy gain that drives this precursor state to Mott localization, follows from maximizing umklapp scattering near the Fermi energy. To this end, we show how energy gaps driven by umklapp scattering can open on an appropriately chosen surface, as proposed earlier by Yang, Rice, and Zhang. The key feature is that the pairing instability includes umklapp scattering, leading to an energy gap not only in the single-particle spectrum but also in the pair spectrum. As a result the superconducting gap at overdoping is turned into an insulating pseudogap in the antinodal parts of the Fermi surface.

Andreev Reflection Spectroscopy of Nb-doped Bi2Se3 Topological Insulator

Science.gov (United States)

Kurter, C.; Finck, A. D. K.; Qiu, Y.; Huemiller, E.; Weis, A.; Atkinson, J.; Medvedeva, J.; Hor, Y. S.; van Harlingen, D. J.

2015-03-01

Doped topological insulators are speculated to realize p-wave superconductivity with unusual low energy quasiparticles, such as surface Andreev bound states. We present point contact spectroscopy of thin exfoliated flakes of Nb-doped Bi2Se3 where superconductivity persists up to ~ 1 K, compared to 3.2 K in bulk crystals. The critical magnetic field is strongly anisotropic, consistent with quasi-2D behavior. Andreev reflection measurements of devices with low resistance contacts result in prominent BTK-like behavior with an enhanced conductance plateau at low bias. For high resistance contacts, we observe a split zero bias conductance anomaly and additional features at the superconducting gap. Our results suggest that this material is a promising platform for studying topological superconductivity. We acknowledge support from Microsoft Project Q.

Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

Science.gov (United States)

Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

2009-11-01

Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

Superfluid and insulating phases in an interacting-boson model: mean-field theory and the RPA

International Nuclear Information System (INIS)

Sheshadri, K.; Pandit, R.; Krishnamurthy, H.R.; Ramakrishnan, T.V.

1993-01-01

The bosonic Hubbard model is studied via a simple mean-field theory. At zero temperature, in addition to yielding a phase diagram that is qualitatively correct, namely a superfluid phase for non-integer fillings and a Mott transition from a superfluid to an insulating phase for integer fillings, this theory gives results that are in good agreement with Monte Carlo simulations. In particular, the superfluid fraction obtained as a function of the interaction strength U for both integer and non-integer fillings is close to the simulation results. In all phases the excitation spectra are obtained by using the random phase approximation (RPA): the spectrum has a gap in the insulating phase and is gapless (and linear at small wave vectors) in the superfluid phase. Analytic results are presented in the limits of large U and small superfluid density. Finite-temperature phase diagrams and the Mott-insulator-normal-phase crossover are also described. (orig.)

Reliability of the one-crossing approximation in describing the Mott transition

International Nuclear Information System (INIS)

Vildosola, V; Roura-Bas, P; Pourovskii, L V; Manuel, L O

2015-01-01

We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal–insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed. (paper)

Reliability of the one-crossing approximation in describing the Mott transition

Science.gov (United States)

Vildosola, V.; Pourovskii, L. V.; Manuel, L. O.; Roura-Bas, P.

2015-12-01

We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal-insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed.

Investigation of pentacene growth on SiO2 gate insulator after photolithography for nitrogen-doped LaB6 bottom-contact electrode formation

Science.gov (United States)

Maeda, Yasutaka; Hiroki, Mizuha; Ohmi, Shun-ichiro

2018-04-01

Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10-3 to 0.11 cm2/(V·s), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning.

The Statistical Fragmentation Theory of N. F. Mott

Science.gov (United States)

Grady, Dennis

2004-07-01

For a brief period during the height of World War II, Neville F. Mott left his position at the University of Bristol and headed up a concerted theoretical effort at Fort Halstead, UK, to investigate the operational science of weapons and armor technology. The seminal achievements resulting from the efforts of the participating scientists are extraordinary and have provided the basis for much of the continuing research in this field over the intervening six decades. N. F. Mott chose to study the phenomenon of the explosive-driven fragmentation of exploding shell cases. The approaches pursued by Mott are documented in several interim reports and open literature publications and offer a fascinating look into the insightful thinking and scientific methods of one of the preeminent physicists of the last century. This presentation offers a perspective into the several theoretical approaches pursued by Mott. In particular, the hallmark relation for the representation of exploding munitions fragmentation data to the present day is the Mott distribution. The efforts of Mott leading to this distribution are explored and a judgment is offered as to whether Mott himself would use this distribution today.

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

Science.gov (United States)

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Transport of electric charge in insulators

International Nuclear Information System (INIS)

Lopez C, E.

1979-01-01

In this work a review is made of important concepts in the study of the transport of electric charge in insulators. These concepts are: electrical contacts, transport regimes as viewed in the I-V characteristics, and photoinjection processes by internal photemission of holes or electrons from metals or semiconductors into insulators or by a virtual electrode using strongly absorbed light. Experimental results of photoinjection of holes and electrons into sulfur single crystals are analyzed using these concepts. The observation of the Mott-Gurney transition is reported for the first time. This is the transition between the region of space charge limited currents (SCLC) and the region of saturation of the current as a function of the applied voltage. A modified Mott-Gurney theoretical model is presented that is able to explain the whole I-V characteristic for uv and the internal photoemission of hopes and uv photoinjection of electrons. For the case of internal photoemission of electrons the conventional space charge limited current theory for an exponential distribution of traps is able to explain the experimental data. It is found that the crystals are of high purity since the total density of traps, as calculated from their exponential distribution, is Nsub(t) equals 1.8 X 10 14 cm -3 . (author)

Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

International Nuclear Information System (INIS)

Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

2016-01-01

We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO 2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H 2 -annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers. (paper)

Cryogenic microwave imaging of metal–insulator transition in doped silicon

KAUST Repository

Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

2011-01-01

We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases. © 2011 American Institute of Physics.

Semiconductor of spinons: from Ising band insulator to orthogonal band insulator.

Science.gov (United States)

Farajollahpour, T; Jafari, S A

2018-01-10

We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the 'ARPES-dark' state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

Semiconductor of spinons: from Ising band insulator to orthogonal band insulator

Science.gov (United States)

Farajollahpour, T.; Jafari, S. A.

2018-01-01

We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the ‘ARPES-dark’ state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

Nevill Mott reminiscences and appreciations

CERN Document Server

Davis, E A

1998-01-01

Sir Nevill Mott was Britain''s last Winner of the Nobel Prize for Physics. This is a tribute to the life and work of Nobel Laureate Nevill Mott, a hugely admired and appreciated man, and one of this countries greatest ever scientists. It includes contributions from over 80 of his friends, family and colleagues, full of anecdotes and appreciations for this collossus of modern physics.

Insulating phase in Sr{sub 2}IrO{sub 4}: An investigation using critical analysis and magnetocaloric effect

Energy Technology Data Exchange (ETDEWEB)

Bhatti, Imtiaz Noor; Pramanik, A.K., E-mail: akpramanik@mail.jnu.ac.in

2017-01-15

The nature of insulating phase in 5d based Sr{sub 2}IrO{sub 4} is quite debated as the theoretical as well as experimental investigations have put forward evidences in favor of both magnetically driven Slater-type and interaction driven Mott-type insulator. To understand this insulating behavior, we have investigated the nature of magnetic state in Sr{sub 2}IrO{sub 4} through studying critical exponents, low temperature thermal demagnetization and magnetocaloric effect. The estimated critical exponents do not exactly match with any universality class, however, the values obey the scaling behavior. The exponent values suggest that spin interaction in present material is close to mean-field model. The analysis of low temperature thermal demagnetization data, however, shows dual presence of localized- and itinerant-type of magnetic interaction. Moreover, field dependent change in magnetic entropy indicates magnetic interaction is close to mean-field type. While this material shows an insulating behavior across the magnetic transition, yet a distinct change in slope in resistivity is observed around T{sub c}. We infer that though the insulating phase in Sr{sub 2}IrO{sub 4} is more close to be Slater-type but the simultaneous presence of both Slater- and Mott-type is the likely scenario for this material. - Highlights: • Critical analysis shows Sr{sub 2}IrO{sub 4} has ferromagnetic ordering temperature T{sub c}~225 K. • Obtained critical exponents imply spin interaction is close to mean-field model. • Analysis of magneto-entropy data also supports mean-field type interaction. • However, the presence of both itinerant and localized spin interaction is evident. • Sr{sub 2}IrO{sub 4} has simultaneous presence of both Slater- and Mott-type insulating phase.

High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

Science.gov (United States)

Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

2018-06-01

We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Hubbard physics in the PAW GW approximation

Energy Technology Data Exchange (ETDEWEB)

Booth, J. M., E-mail: jamie.booth@rmit.edu.au; Smith, J. S.; Russo, S. P. [Theoretical Chemical and Quantum Physics, School of Science, RMIT University, Melbourne, VIC (Australia); Drumm, D. W. [Theoretical Chemical and Quantum Physics, School of Science, RMIT University, Melbourne, VIC (Australia); Australian Research Council Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, VIC (Australia); Casey, P. S. [CSIRO Manufacturing, Clayton, VIC (Australia)

2016-06-28

It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by the splitting of states at the Fermi level into upper and lower Hubbard bands, and exhibits a giant transfer of spectral weight upon electron doping. The method is also employed to clearly illustrate that the M{sub 1} and M{sub 2} forms of vanadium dioxide are fundamentally different types of insulator. Standard GW calculations are sufficient to open a gap in M{sub 1} VO{sub 2}, which arise from the Peierls pairing filling the valence band, creating homopolar bonds. The valence band wavefunctions are stabilized with respect to the conduction band, reducing polarizability and pushing the conduction band eigenvalues to higher energy. The M{sub 2} structure, however, opens a gap from strong on-site interactions; it is a Mott insulator.

The effect of hydrostatic pressure on conductivity behaviour of needle crystals of iodine and oxygen doped niobium-sulphur compounds

International Nuclear Information System (INIS)

Balla, D.D.; Bondarenko, A.V.; Obolenskij, M.A.; Beletskij, V.I.; Chashka, Kh.B.

1985-01-01

The effect of the hydrostatic pressures up to 11 kbar on conductivity behaviour of the needle crystal of iodine and oxygen doped niobium-sulphur compounds were studied in the temperature range 4.2-300 K. It is shown that in the temperature range 110-300 K conductivity is thermal activated (P=1 bar). Below 110 K the Mott characteristic is observed. Under hydrostatic pressure the deviations from Mott characteristic occurs. The analysis of data suggested that crystals are doped semiconductors

Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

KAUST Repository

Hong, Seung Sae; Cha, Judy J.; Kong, Desheng; Cui, Yi

2012-01-01

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

KAUST Repository

Hong, Seung Sae

2012-03-27

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

Orthorhombic fulleride (CH3NH2)K3C60 close to Mott-Hubbard instability: Ab initio study

Science.gov (United States)

Potočnik, Anton; Manini, Nicola; Komelj, Matej; Tosatti, Erio; Arčon, Denis

2012-08-01

We study the electronic structure and magnetic interactions in methylamine-intercalated orthorhombic alkali-doped fullerene (CH3NH2)K3C60 within the density functional theory. As in the simpler ammonia intercalated compound (NH3)K3C60, the orthorhombic crystal-field anisotropy Δ lifts the t1u triple degeneracy at the Γ point and drives the system deep into the Mott-insulating phase. However, the computed Δ and conduction electron bandwidth W cannot alone account for the abnormally low experimental Néel temperature, TN=11 K, of the methylamine compound, compared to the much higher value TN=40 K of the ammonia one. Significant interactions between CH3NH2 and C603- are responsible for the stabilization of particular fullerene-cage distortions and the ensuing low-spin S=1/2 state. These interactions also seem to affect the magnetic properties, as interfullerene exchange interactions depend on the relative orientation of deformations of neighboring C603- molecules. For the ferro-orientational order of CH3NH2-K+ groups we find an apparent reduced dimensionality in magnetic exchange interactions, which may explain the suppressed Néel temperature. The disorder in exchange interactions caused by orientational disorder of CH3NH2-K+ groups could further contribute to this suppression.

Controlling transport of the SrIrO3 correlated semimetal by doping with an ionic liquid

Science.gov (United States)

Santamaria, Jacobo; Tornos, J.; Perez-Muã+/-Oz, A.; Cabero, M.; Gallego, F.; Rivera, A.; Sefrioui, Z.; Varela, M.; Leon, C.; Garcia Barriocanal, J.; Mompean, F.; Garcia-Hernandez, M.

The interplay between Mott and spin orbit physics in 5d oxides may result from the splitting of crystal field states by the strong spin orbit interaction. Among them, SrIrO3 is a correlated semimetal, with a groundstate which has been proposed to be topologically protected by the crystalline symmetry. The strong coupling of the electronic structure to oxygen rotations and its interplay with spin orbit interaction gives rise to anomalously narrow bands. The semimetallic state results from the compensation of electron and hole carriers (pockets) coming from separated regions in momentum space. This explains how epitaxial strain enhances the asymmetry of electron hole mobilities eventually triggering a metal to insulator transition (MIT). An intriguing question is the correlated nature of this MIT, and if as such, it can be controlled by charge density. To address this question we have conducted doping experiments with ionic liquid gating. In this talk we will show that the strain induced MIT can be in fact controlled by doping indicating the role played by electron correlations in the semimetallic state of SrIrO3.

Disorder-driven metal-insulator-transition assisted by interband Coulomb repulsion in a surface transfer doped electron system

Science.gov (United States)

Francisco Sánchez-Royo, Juan

2012-12-01

The two-dimensional conducting properties of the Si(111) \\sqrt {3} \\times \\sqrt {3} surface doped by the charge surface transfer mechanism have been calculated in the frame of a semiclassical Drude-Boltzmann model considering donor scattering mechanisms. To perform these calculations, the required values of the carrier effective mass were extracted from reported angle-resolved photoemission results. The calculated doping dependence of the surface conductance reproduces experimental results reported and reveals an intricate metallization process driven by disorder and assisted by interband interactions. The system should behave as an insulator even at relatively low doping due to disorder. However, when doping increases, the system achieves to attenuate the inherent localization effects introduced by disorder and to conduct by percolation. The mechanism found by the system to conduct appears to be connected with the increasing of the carrier effective mass observed with doping, which seems to be caused by interband interactions involving the conducting band and deeper ones. This mass enhancement reduces the donor Bohr radius and, consequently, promotes the screening ability of the donor potential by the electron gas.

Photoinduced Coherent Spin Fluctuation in Primary Dynamics of Insulator to Metal Transition in Perovskite Cobalt Oxide

Directory of Open Access Journals (Sweden)

Arima T.

2013-03-01

Full Text Available Coherent spin fluctuation was detected in the photoinduced Mott insulator-metal transition in perovskite cobalt oxide by using 3 optical-cycle infrared pulse. Such coherent spin fluctuation is driven by the perovskite distortion changing orbital gap.

Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3

Science.gov (United States)

Wen, Fangdi; Cao, Yanwei; Liu, Xiaoran; Pal, B.; Middey, S.; Kareev, M.; Chakhalian, J.

2018-03-01

Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces present an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin of ferromagnetism in LaAlO3/SrTiO3 heterojunctions is still an open question. Here, by using a prototypical two-dimensional electron gas (2DEG) which emerges at the interface between band insulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3, the experiment reveals the evidence for magnetic phase separation in a hole-doped Ti d1 t2g system, resulting in spin-polarized 2DEG. The details of electronic and magnetic properties of the 2DEG were investigated by temperature-dependent d.c. transport, angle-dependent X-ray photoemission spectroscopy, and temperature-dependent magnetoresistance. The observation of clear hysteresis in magnetotransport at low magnetic fields implies spin-polarization from magnetic islands in the hole rich LaTiO3 near the interface. These findings emphasize the role of magnetic instabilities in doped Mott insulators, thus providing another path for designing all-oxide structures relevant to spintronic applications.

Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

Science.gov (United States)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

2018-05-01

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Effect of cadmium doping on some properties of glass-insulated bismuth-based microwires

International Nuclear Information System (INIS)

Meglei, D.; Dyntu, M.

2011-01-01

Full text: According to the literature, semiconductor converters based on films and wire crystals are widely used in present-day microelectronics. However, the production of efficient semiconductor converters requires crystals of high structural perfection with a given composition and desired electrical and mechanical properties. In this work, we describe the study of the perfection of the microstructure and mechanical properties of glass-insulated microwires based on Bi doped with cadmium (Cd) and the technique of preparation of micro resistors suitable for instrumentation applications. Microscopic studies of ground, polished, and chemically etched microwires doped with cadmium showed that they have smooth cylindrical surfaces in the entire range of diameters. Sizes of defects in the form of micropores, microcracks, dislocations, and twins on their surface are much smaller than those of pure bismuth microwire. It is also found that the tendency to twinning and the number and size of surface defects decrease with decreasing diameters; at the same time, their homogeneity increases. The tensile strength of the studied microwires with glass insulation is high for all tested diameters and ranges within 33.274.1 kg/mm with respect to internal diameters of 5.6 21.2 m; in addition, they withstand a breaking force up to 130 g and more, whereas the samples of pure bismuth microwires withstood a force up to 80 g. It is also found that the tensile strength of cadmium doped microwires is significantly higher than that of undoped samples. The bending strength as a measure of elasticity was determined using a special installation according to the critical bending radius of the sample at which the sample integrity is violated. The results of bending tests showed that, with increasing diameter of the doped samples, the critical radius linearly increases; that is, in this case, the elasticity increases with decreasing diameter. Metallographic analysis revealed that cadmium in the

Electron-optical systems for Mott polarimeters

International Nuclear Information System (INIS)

Fishkova, T.Ya.; Mamaev, Yu.A.; Ovsyannikova, I.P.; Petrov, V.N.; Shpak, E.V.

1994-01-01

Electron-optical systems, forming polarized electron beams from solid and gaseous sources at a Mott detector with operating potentials of 20 and 50 kV, have been theoretically investigated. The integral EOS creates a beam <2.6 nm in diameter at the target of the Mott detector for secondary electrons with energies of 1-20 eV and exit angles of 0 -60 . The differential EOS provides an energy resolution of 2-6% within the range of 3-2000 eV, the illumination being 5-13% for a 4π angle; at the target of the Mott detector it creates a beam of 1-6 mm in diameter. Both systems have been constructed at the laboratory of Spin-polarized Electron Spectroscopy (Department of Experimental Physics) at St. Petersburg State Technical University. ((orig.))

Magnetism and the low-energy electronic structure of Mott insulators K{sub 2}CoF{sub 4} and SrMnO{sub 3} perovskites

Energy Technology Data Exchange (ETDEWEB)

Nalecz, D.M., E-mail: sfnalecz@cyf-kr.edu.pl [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Radwanski, R.J. [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland); Ropka, Z. [Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland)

2016-09-01

For Mott insulators, K{sub 2}CoF{sub 4} and SrMnO{sub 3}, we have calculated, in the purely ionic model, the low-energy electronic structure both in the paramagnetic and magnetic state as well as zero-temperature magnetic moment, its direction and its temperature dependence. We have calculated the octahedral crystal-field strength 10Dq to be 0.98 and 2.25 eV. We claim that for an adequate theoretical description of magnetic properties even small local distortions and the intra-atomic relativistic spin-orbit coupling have to be taken into account. Our studies have revealed a strong interplay of the magnetism, the orbital moment in particular, with the local crystallographic structure. The calculated orbital moment in K{sub 2}CoF{sub 4} is very large, 1.06 μ{sub B}, giving 30% contribution to the total moment - this result points the necessity to “unquench” the orbital magnetism in 3d compounds. We consistently described magnetic and some optical properties of these compounds, containing atoms with incomplete 3d shell, in agreement with their insulating ground state. - Highlights: • The octahedral crystal-field 10Dq amounts to 0.98 and 2.25 eV in K{sub 2}CoF{sub 4} and SrMnO{sub 3}. • The low-energy electronic structures in the magnetic state is displayed. • There is a strong interplay of the magnetism and the local crystal structure. • Temperature dependence of the Mn{sup 4+}- ion magnetic moment has been described. • Relativistic spin-orbit coupling is indispensable for description of 3d magnetism.

Fine structure of metal–insulator transition in EuO resolved by doping engineering

Science.gov (United States)

Averyanov, Dmitry V.; Parfenov, Oleg E.; Tokmachev, Andrey M.; Karateev, Igor A.; Kondratev, Oleg A.; Taldenkov, Alexander N.; Platunov, Mikhail S.; Wilhelm, Fabrice; Rogalev, Andrei; Storchak, Vyacheslav G.

2018-05-01

Metal–insulator transitions (MITs) offer new functionalities for nanoelectronics. However, ongoing attempts to control the resistivity by external stimuli are hindered by strong coupling of spin, charge, orbital and lattice degrees of freedom. This difficulty presents a quest for materials which exhibit MIT caused by a single degree of freedom. In the archetypal ferromagnetic semiconductor EuO, magnetic orders dominate the MIT. Here we report a new approach to take doping under control in this material on the nanoscale: formation of oxygen vacancies is strongly suppressed to exhibit the highest MIT resistivity jump and magnetoresistance among thin films. The nature of the MIT is revealed in Gd doped films. The critical doping is determined to be more than an order of magnitude lower than in all previous studies. In lightly doped films, a remarkable thermal hysteresis in resistivity is discovered. It extends over 100 K in the paramagnetic phase reaching 3 orders of magnitude. In the warming mode, the MIT is shown to be a two-step process. The resistivity patterns are consistent with an active role of magnetic polarons—formation of a narrow band and its thermal destruction. High-temperature magnetic polaron effects include large negative magnetoresistance and ferromagnetic droplets revealed by x-ray magnetic circular dichroism. Our findings have wide-range implications for the understanding of strongly correlated oxides and establish fundamental benchmarks to guide theoretical models of the MIT.

Reassessment of the electronic state, magnetism, and superconductivity in high-T{sub c} cuprates with the Nd{sub 2}CuO{sub 4} structure

Energy Technology Data Exchange (ETDEWEB)

Naito, Michio, E-mail: minaito@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan); Krockenberger, Yoshiharu; Ikeda, Ai; Yamamoto, Hideki [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

2016-04-15

Highlights: • The 30-year history of “electron-doped” cuprates is reviewed, including basic physics and material issues. • Undoped cuprates with the Nd{sub 2}CuO{sub 4} (T’) structure are superconducting with T{sub c} over 30 K. • Electron doping by Ce in T’-RE{sub 2}CuO{sub 4} lowers T{sub c} and the highest T{sub c} is obtained at no doping. - Abstract: The electronic phase diagram of the cuprates remains enigmatic and is still a key ingredient to understand the mechanism of high-T{sub c} superconductivity. It has been believed for a long time that parent compounds of cuprates were universally antiferromagnetic Mott insulators (charge-transfer insulators) and that high-T{sub c} superconductivity would develop upon doping holes or electrons in a Mott–Hubbard insulator (“doped Mott-insulator scenario”). However, our recent discovery of superconductivity in the parent compounds of square-planar cuprates with the Nd{sub 2}CuO{sub 4} (T’) structure and the revised electronic phase diagram in T’ cuprates urged a serious reassessment to the above scenario. In this review, we present the main results derived from our synthesis and experiments on T’ cuprates in the undoped or heavily underdoped regime over 20 years, including material issues and basic physics. The key material issue is how to remove excess oxygen ions at the apical site without introducing oxygen vacancies in the CuO{sub 2} planes. In order to put this into practice, the basic knowledge of complex solid-state chemistry in T’ cuprates is required, which is also included in this review.

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

Science.gov (United States)

Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley

2017-08-01

At present, machine learning systems use simplified neuron models that lack the rich nonlinear phenomena observed in biological systems, which display spatio-temporal cooperative dynamics. There is evidence that neurons operate in a regime called the edge of chaos that may be central to complexity, learning efficiency, adaptability and analogue (non-Boolean) computation in brains. Neural networks have exhibited enhanced computational complexity when operated at the edge of chaos, and networks of chaotic elements have been proposed for solving combinatorial or global optimization problems. Thus, a source of controllable chaotic behaviour that can be incorporated into a neural-inspired circuit may be an essential component of future computational systems. Such chaotic elements have been simulated using elaborate transistor circuits that simulate known equations of chaos, but an experimental realization of chaotic dynamics from a single scalable electronic device has been lacking. Here we describe niobium dioxide (NbO2) Mott memristors each less than 100 nanometres across that exhibit both a nonlinear-transport-driven current-controlled negative differential resistance and a Mott-transition-driven temperature-controlled negative differential resistance. Mott materials have a temperature-dependent metal-insulator transition that acts as an electronic switch, which introduces a history-dependent resistance into the device. We incorporate these memristors into a relaxation oscillator and observe a tunable range of periodic and chaotic self-oscillations. We show that the nonlinear current transport coupled with thermal fluctuations at the nanoscale generates chaotic oscillations. Such memristors could be useful in certain types of neural-inspired computation by introducing a pseudo-random signal that prevents global synchronization and could also assist in finding a global minimum during a constrained search. We specifically demonstrate that incorporating such

Topological insulators/superconductors: Potential future electronic materials

International Nuclear Information System (INIS)

Hor, Y. S.

2014-01-01

A new material called topological insulator has been discovered and becomes one of the fastest growing field in condensed matter physics. Topological insulator is a new quantum phase of matter which has Dirac-like conductivity on its surface, but bulk insulator through its interior. It is considered a challenging problem for the surface transport measurements because of dominant internal conductance due to imperfections of the existing crystals of topological insulators. By a proper method, the internal bulk conduction can be suppressed in a topological insulator, and permit the detection of the surface currents which is necessary for future fault-tolerant quantum computing applications. Doped topological insulators have depicted a large variety of bulk physical properties ranging from magnetic to superconducting behaviors. By chemical doping, a TI can change into a bulk superconductor. Nb x Bi 2 Se 3 is shown to be a superconductor with T c ∼ 3.2 K, which could be a potential candidate for a topological superconductor

Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

Science.gov (United States)

Rao, Rathnamala; Katti, Guruprasad; Havaldar, Dnyanesh S.; DasGupta, Nandita; DasGupta, Amitava

2009-03-01

The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson's equation. 2D Poisson's equation is solved analytically for appropriate boundary conditions using separation of variables technique. The solution is then extended to obtain the threshold voltage of the FDSOI MOSFET. The model is able to handle any kind of non-uniform doping, viz. vertical, lateral as well as laterally asymetric channel (LAC) profile in the SOI film in addition to the DMG structure. The analytical results are validated with the numerical simulations using the device simulator MEDICI.

Magnetic and structural properties of Mn-doped Bi.sub.2./sub.Se.sub.3./sub. topological insulators

Czech Academy of Sciences Publication Activity Database

Tarasenko, R.; Vališka, M.; Vondráček, Martin; Horáková, Kateřina; Tkáč, V.; Carva, K.; Baláž, P.; Holý, V.; Springholz, G.; Sechovský, V.; Honolka, Jan

2016-01-01

Roč. 481, Jan (2016), 262-267 ISSN 0378-4363 R&D Projects: GA ČR(CZ) GA14-30062S; GA MŠk LO1409; GA MŠk(CZ) LM2011029 Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * Mn-doped Bi 2 Se 3 * X-ray diffraction * X-ray photoemission * spectroscopy * ferromagnetism Subject RIV: BM - Solid Matter Physics ; Magnetism

Antiferromagnetic Mott insulating state in the single-component molecular material Pd(tmdt)2

Science.gov (United States)

Takagi, Rina; Sari, Dita Puspita; Mohd-Tajudin, Saidah Sakinah; Ashi, Retno; Watanabe, Isao; Ishibashi, Shoji; Miyagawa, Kazuya; Ogura, Satomi; Zhou, Biao; Kobayashi, Akiko; Kanoda, Kazushi

2017-12-01

A family of compounds built by a single molecular species, M (tmdt) 2, with a metal ion, M , and organic ligands, tmdt, affords diverse electronic phases due to M -dependent interplays between d electrons in M , and π electrons in tmdt. We investigated the spin state in Pd (tmdt) 2 , a π -electron system without a d -electron contribution, through 1H nuclear magnetic resonance (NMR) and muon-spin resonance experiments. The temperature profiles of the NMR linewidth, relaxation rate, and asymmetry parameter in muon decay show an inhomogeneous antiferromagnetic order with moments distributed around ˜0.1 μB that onsets at above 100 K. This result provides an example of the antiferromagnetic order in a pure π -electron system in M (tmdt) 2, and it demonstrates that correlation among the π electrons is so strong as to give the Néel temperature over 100 K. The small and inhomogeneous moments are understandable as the crucial disorder effect in correlated electrons situated near the Mott transition.

Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

Science.gov (United States)

Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

2018-05-01

Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

Observation of a Slater-type metal-to-insulator transition in Sr$_2$IrO$_4$ from time-resolved photo-carrier dynamics

OpenAIRE

Hsieh, D.; Mahmood, F.; Torchinsky, D. H.; Cao, G.; Gedik, N.

2012-01-01

We perform a time-resolved optical study of Sr$_2$IrO$_4$ to understand the influence of magnetic ordering on the low energy electronic structure of a strongly spin-orbit coupled $J_{eff}$=1/2 Mott insulator. By studying the recovery dynamics of photo-carriers excited across the Mott gap, we find that upon cooling through the N\\'{e}el temperature $T_N$ the system evolves continuously from a metal-like phase with fast ($\\sim$50 fs) and excitation density independent relaxation dynamics to a ga...

MeV Mott polarimetry at Jefferson Lab

International Nuclear Information System (INIS)

Steigerwald, M.

2001-01-01

In the recent past, Mott polarimetry has been employed only at low electron beam energies (≅100 keV). Shortly after J. Sromicki demonstrated the first Mott scattering experiment on lead foils at 14 MeV (MAMI, 1994), a high energy Mott scattering polarimeter was developed at Thomas Jefferson National Accelerator Facility (5 MeV, 1995). An instrumental precision of 0.5% was achieved due to dramatic improvement in eliminating the background signal by means of collimation, shielding, time of flight and coincidence methods. Measurements for gold targets between 0.05 μm and 5 μm for electron energies between 2 and 8 MeV are presented. A model was developed to explain the depolarization effects in the target foils due to double scattering. The instrumental helicity correlated asymmetries were measured to smaller than 0.1%

Irradiation-induced doping of Bismuth Telluride Bi2Te3

International Nuclear Information System (INIS)

Rischau, Carl Willem

2014-01-01

Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

Influence of the disorder in doped germanium changed by compensation on the critical indices of the metal-insulator transition

International Nuclear Information System (INIS)

Rentzsch, R.; Reich, Ch.; Ionov, A.N.; Ginodman, V.; Slimak, I.; Fozooni, P.; Lea, M.J.

1999-01-01

We present a critical review of the present status of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with the emphasis on the role of meso- and macroscopy inhomogeneity caused by the disorder of acceptors and donors in the crystals. By using the isotopic and engineering and the neutron transmutation doping of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν = 1/2 and ξ = 1, which double for medium compensations (at K = 39 and 54%) to ν 1 and ξ = 2, respectively

Processing of insulators and semiconductors

Science.gov (United States)

Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

2015-06-16

A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

Magnetic and electronic properties of La3 M O7 and possible polaron formation in hole-doped La3 M O7 (M   =  Ru and Os)

International Nuclear Information System (INIS)

Gao, Bin; Weng, Yakui; Zhang, Jun-Jie; Zhang, Huimin; Zhang, Yang; Dong, Shuai

2017-01-01

Oxides with 4 d /5 d transition metal ions are physically interesting for their particular crystalline structures as well as the spin–orbit coupled electronic structures. Recent experiments revealed a series of 4 d /5 d transition metal oxides R 3 M O 7 (R : rare earth; M : 4 d /5 d transition metal) with unique quasi-one-dimensional M chains. Here first-principles calculations have been performed to study the electronic structures of La 3 OsO 7 and La 3 RuO 7 . Our study confirm both of them to be Mott insulating antiferromagnets with identical magnetic order. The reduced magnetic moments, which are much smaller than the expected value for ideal high-spin state (3 t 2g orbitals occupied), are attributed to the strong p   −   d hybridization with oxygen ions, instead of the spin–orbit coupling. The Ca-doping to La 3 OsO 7 and La 3 RuO 7 can not only modulate the nominal carrier density but also affect the orbital order as well as the local distortions. The Coulombic attraction and particular orbital order would prefer to form polarons, which might explain the puzzling insulating behavior of doped 5 d transition metal oxides. In addition, our calculations predict that the Ca-doping can trigger ferromagnetism in La 3 RuO 7 but not in La 3 OsO 7 . (paper)

Fractal like charge transport in polyaniline nanostructures

International Nuclear Information System (INIS)

Nath, Chandrani; Kumar, A.

2013-01-01

The structural and electrical properties of camphorsulfonic acid (CSA) doped nanotubes, and hydrochloric acid (HCl) doped nanofibers and nanoparticles of polyaniline have been studied as a function of doping level. The crystallinity increases with doping for all the nanostructures. Electrical transport measurements in the temperature range of 5–300 K show an increase in conductivity with doping for the nanostructures. All the nanostructures exhibit metal to insulator (MIT) transition below 40 K. The metallic behavior is ascribed to the electron–electron interaction effects. In the insulating regime of the nanotubes conduction follows the Mott quasi-1D variable range hopping model, whereas the conduction in the nanofibers and nanoparticles occur by variable range hopping of charge carriers among superlocalized states without and with Coulomb interaction, respectively. The smaller dopant size in case of HCl makes the polymer fractal resulting in superlocalization of electronic wave-functions. The confined morphology of the nanoparticles results in effective Coulomb interaction dominating the intersite hopping

Electronic structure properties of UO2 as a Mott insulator

Science.gov (United States)

Sheykhi, Samira; Payami, Mahmoud

2018-06-01

In this work using the density functional theory (DFT), we have studied the structural, electronic and magnetic properties of uranium dioxide with antiferromagnetic 1k-, 2k-, and 3k-order structures. Ordinary approximations in DFT, such as the local density approximation (LDA) or generalized gradient approximation (GGA), usually predict incorrect metallic behaviors for this strongly correlated electron system. Using Hubbard term correction for f-electrons, LDA+U method, as well as using the screened Heyd-Scuseria-Ernzerhof (HSE) hybrid functional for the exchange-correlation (XC), we have obtained the correct ground-state behavior as an insulator, with band gaps in good agreement with experiment.

Nearest-neighbor Kitaev exchange blocked by charge order in electron-doped α -RuCl3

Science.gov (United States)

Koitzsch, A.; Habenicht, C.; Müller, E.; Knupfer, M.; Büchner, B.; Kretschmer, S.; Richter, M.; van den Brink, J.; Börrnert, F.; Nowak, D.; Isaeva, A.; Doert, Th.

2017-10-01

A quantum spin liquid might be realized in α -RuCl3 , a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, α -RuCl3 is a Mott insulator, which implies the possibility that novel exotic phases occur upon doping. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spectroscopy, and density functional theory calculations. We obtain a stable stoichiometry at K0.5RuCl3 . This gives rise to a peculiar charge disproportionation into formally Ru2 + (4 d6 ) and Ru3 + (4 d5 ). Every Ru 4 d5 site with one hole in the t2 g shell is surrounded by nearest neighbors of 4 d6 character, where the t2 g level is full and magnetically inert. Thus, each type of Ru site forms a triangular lattice, and nearest-neighbor interactions of the original honeycomb are blocked.

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

Pertinence et limitations de la loi de Mott dans les isolants désordonnés

Science.gov (United States)

Ladieu, François; Sanquer, Marc

Twenty five years ago, Mott's law was established in order to describe electrical transport in disordered insulators at low temperature. In this review, we briefly summarize the different theoretical steps involved in the rigourous derivation of Mott's law. We stress upon the fact that Mott's law gives the mean conductance of an ensemble of macroscopic samples as long as electron-electron interactions remain negligible. We then study what happens when at least one of the key assumptions of Mott's law no longer holds. We first focus on systems whose size — at least in one dimension — is not macroscopic: the optimization involved in Mott's law is no longer relevant for the measured conductance. Eventually, we try to gather different works dealing with electron-electron interactions. It is now established that interactions generally produce a stronger divergence for the electrical resistance than the one predicted by Mott's law at the lowest temperatures. But the exact shape of this divergence, as well as its interpretation, remain debated. We try to make a link between Efros and Shklovskii 's work and their famous "Coulomb gap" and a more recent work about granular media. In this latter work, the size of the grains is the key parameter for the shape of the divergence of the resistance at low temperature. We suggest this could indicate a way for a model accounting for the different shapes of divergence of the electrical resistance at the lowest temperatures. Furthermore this framework of granular media allows us to deal with non linear regime: we explain the main differences between the predictions of the hot electrons model and the ones recently derived for a d -dimensional network of grains. Il y a déjà un quart de siècle que la loi de Mott a été établie afin de décrire le transport dans les milieux isolants désordonnés à basse température. Dans cet article de revue, nous rappelons brièvement les diverses étapes théoriques nécessaires à l

Evaluation of the density of the charge trapped in organic ferroelectric capacitors based on the Mott-Schottky model

Energy Technology Data Exchange (ETDEWEB)

Kim, Won-Ho [Samsung Display Co. Ltd., Yongin (Korea, Republic of); Kwon, Jin-Hyuk; Park, Gyeong-Tae; Kim, Jae-Hyun; Bae, Jin-Hyuk [Kyungpook National University, Daegu (Korea, Republic of); Zhang, Xue; Park, Jae-Hoon [Hallym University, Chuncheon (Korea, Republic of)

2014-09-15

Organic ferroelectric capacitors were fabricated using pentacene and poly (vinylidene fluoride trifluoroethylene) (PVDF-TrFE) as an organic semiconductor and a ferroelectric material, respectively. A paraelectric poly(vinyl cinnamate) layer was adopted as an interlayer between the PVDFTrFE layer and the bottom electrode. The paraelectric interlayer induced a depolarization field opposite to the direction of the polarization formed in the ferroelectric PVDF-TrFE insulator, thereby suppressing spontaneous polarization. As a result, the Mott-Schottky model could be used to evaluate, from the extracted flat-band voltages, the density of the charge trapped in the organic ferroelectric capacitors.

A tale of two metals: contrasting criticalities in the pnictides and hole-doped cuprates

Science.gov (United States)

Hussey, N. E.; Buhot, J.; Licciardello, S.

2018-05-01

The iron-based high temperature superconductors share a number of similarities with their copper-based counterparts, such as reduced dimensionality, proximity to states of competing order, and a critical role for 3d electron orbitals. Their respective temperature-doping phase diagrams also contain certain commonalities that have led to claims that the metallic and superconducting (SC) properties of both families are governed by their proximity to a quantum critical point (QCP) located inside the SC dome. In this review, we critically examine these claims and highlight significant differences in the bulk physical properties of both systems. While there is now a large body of evidence supporting the presence of a (magnetic) QCP in the iron pnictides, the situation in the cuprates is much less apparent, at least for the end point of the pseudogap phase. We argue that the opening of the normal state pseudogap in cuprates, so often tied to a putative QCP, arises from a momentum-dependent breakdown of quasiparticle coherence that sets in at much higher doping levels but which is driven by the proximity to the Mott insulating state at half filling. Finally, we present a new scenario for the cuprates in which this loss of quasiparticle integrity and its evolution with momentum, temperature and doping plays a key role in shaping the resultant phase diagram. This key issues review is dedicated to the memory of Dr John Loram whose pioneering measurements, analysis and ideas inspired much of its content.

Electronic Identification of the Parental Phases and Mesoscopic Phase Separation of K_{x}Fe_{2-y}Se_{2} Superconductors

Directory of Open Access Journals (Sweden)

F. Chen

2011-12-01

Full Text Available The nature of the parent compound of a high-temperature superconductor (HTS often plays a pivotal role in determining its superconductivity. The parent compounds of the cuprate HTSs are antiferromagnetically ordered Mott insulators, while those of the iron-pnictide HTSs are metals with spin-density-wave order. Here we report the electronic identification of two insulating parental phases and one semiconducting parental phase of the newly discovered family of K_{x}Fe_{2-y}Se_{2} superconductors. The two insulating phases exhibit Mott-insulator-like signatures, and one of the insulating phases is even present in the superconducting and semiconducting K_{x}Fe_{2-y}Se_{2} compounds. However, it is mesoscopically phase-separated from the superconducting or semiconducting phase. Moreover, we find that both the superconducting and semiconducting phases are free of the magnetic and vacancy orders present in the insulating phases, and that the electronic structure of the superconducting phase could be developed by doping the semiconducting phase with electrons. The rich electronic properties discovered in these parental phases of the K_{x}Fe_{2-y}Se_{2} superconductors provide the foundation for studying the anomalous behavior in this new class of iron-based superconductors.

Direct Observation of Surface Potential Distribution in Insulation Resistance Degraded Acceptor-Doped BaTiO3 Multilayered Ceramic Capacitors

Science.gov (United States)

Hong, Kootak; Lee, Tae Hyung; Suh, Jun Min; Park, Jae-Sung; Kwon, Hyung-Soon; Choi, Jaeho; Jang, Ho Won

2018-05-01

Insulation resistance (IR) degradation in BaTiO3 is a key issue for developing miniaturized multilayer ceramic capacitors (MLCCs) with high capacity. Despite rapid progress in BaTiO3-based MLCCs, the mechanism of IR degradation is still controversial. In this study, we demonstrate the Al doping effect on IR degradation behavior of BaTiO3 MLCCs by electrical measurements and scanning Kelvin probe microscopy (SKPM). As the Al doping concentration in BaTiO3 increases, IR degradation of MLCCs seems to be suppressed from electrical characterization results. However, SKPM results reveal that the conductive regions near the cathode become lager with Al doping after IR degradation. The formation of conducting regions is attributed to the migration of oxygen vacancies, which is the origin of IR degradation in BaTiO3, in dielectric layers. These results imply that acceptor doping in BaTiO3 solely cannot suppress the IR degradation in MLCC even though less asymmetric IR characteristics and IR degradation in MLCCs with higher Al doping concentration are observed from electrical characterization. Our results strongly suggest that observing the surface potential distribution in IR degraded dielectric layers using SKPM is an effective method to unravel the mechanism of IR degradation in MLCCs.

Critical Phenomena of the Disorder Driven Localization-Delocalization Transition

International Nuclear Information System (INIS)

Marc Ruehlaender

2001-01-01

Metal-to-insulator transitions are generally linked to two phenomena: electron-electron correlations and disorder. Although real systems are usually responding to a mixture of both, they can be classified as undergoing a Mott-transition, if the former process dominates, or an Anderson-transition, if the latter dominates. High-T c superconductors, e.g., are a candidate for the first class. Materials in which disorder drives the metal-to-insulator transition include doped semiconductors and amorphous materials. After briefly reviewing the previous research on transport in disordered materials and the disorder-induced metal-to-insulator transition, a summary of the model and the methods used in subsequent chapters is given

Electron paramagnetic resonance of isolated Assub(Ga)+ antisite defect in neutron-transmutation doped semi-insulating GaAs

International Nuclear Information System (INIS)

Manasreh, M.O.; McDonald, P.F.; Kivlighn, S.A.; Minton, J.T.; Covington, B.C.

1988-01-01

The isolated Assub(Ga) antisite defect produced by the neutron-transmutation doping in semi-insulating GaAs was studied using the electron paramagnetic resonance technique. The results show that the optically induced quenching of the isolated Assub(Ga) + antisite defect is quite different from that of the EL2 center. Illumination with white light seems to always reduce the electron paramagnetic resonance spectrum suggesting that depopulation of the EL2 center does not introduce a noticeable change in the Assub(Ga) + antisite concentration. (author)

Pressure-Induced Confined Metal from the Mott Insulator {\mathrm{Sr}}_3{\mathrm{Ir}}_2{{O}}_7

Energy Technology Data Exchange (ETDEWEB)

Ding, Yang; Yang, Liuxiang; Chen, Cheng-Chien; Kim, Heung-Sik; Han, Myung Joon; Luo, Wei; Feng, Zhenxing; Upton, Mary; Casa, Diego; Kim, Jungho; Gog, Thomas; Zeng, Zhidan; Cao, Gang; Mao, Ho-kwang; van Veenendaal, Michel

2016-05-24

The spin-orbit Mott insulator Sr₃Ir₂O₇ provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr₃Ir₂O₇ up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

International Nuclear Information System (INIS)

Rawat, Gopal; Kumar, Sanjay; Goel, Ekta; Kumar, Mirgender; Jit, S.; Dubey, Sarvesh

2014-01-01

This paper presents the analytical modeling of subthreshold current and subthreshold swing of short-channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having vertical Gaussian-like doping profile in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approximation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length (L), gate-oxide thickness (t ox ), strained-Si channel thickness (t s-Si ), peak doping concentration (N P ), project range (R p ) and straggle (σ p ) of the Gaussian profile have been considered while predicting the device characteristics. The present work may help to overcome the degradation in subthreshold characteristics with strain engineering. These subthreshold current and swing models provide valuable information for strained-Si MOSFET design. Accuracy of the proposed models is verified using the commercially available ATLAS™, a two-dimensional (2D) device simulator from SILVACO. (semiconductor devices)

Ground-state and spectral properties of an asymmetric Hubbard ladder

Science.gov (United States)

Abdelwahab, Anas; Jeckelmann, Eric; Hohenadler, Martin

2015-04-01

We investigate a ladder system with two inequivalent legs, namely, a Hubbard chain and a one-dimensional electron gas. Analytical approximations, the density-matrix renormalization group method, and continuous-time quantum Monte Carlo simulations are used to determine ground-state properties, gaps, and spectral functions of this system at half-filling. Evidence for the existence of four different phases as a function of the Hubbard interaction and the rung hopping is presented. First, a Luttinger liquid exists at very weak interchain hopping. Second, a Kondo-Mott insulator with spin and charge gaps induced by an effective rung exchange coupling is found at moderate interchain hopping or strong Hubbard interaction. Third, a spin-gapped paramagnetic Mott insulator with incommensurate excitations and pairing of doped charges is observed at intermediate values of the rung hopping and the interaction. Fourth, the usual correlated band insulator is recovered for large rung hopping. We show that the wave numbers of the lowest single-particle excitations are different in each insulating phase. In particular, the three gapped phases exhibit markedly different spectral functions. We discuss the relevance of asymmetric two-leg ladder systems as models for atomic wires deposited on a substrate.

Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

International Nuclear Information System (INIS)

Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

2015-01-01

Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

The electronic structure and metal-insulator transitions in vanadium oxides

International Nuclear Information System (INIS)

Mossanek, Rodrigo Jose Ochekoski

2010-01-01

The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

Spin-rotation symmetry breaking and triplet superconducting state in doped topological insulator CuxBi2Se3

Science.gov (United States)

Zheng, Guo-Qing

Spontaneous symmetry breaking is an important concept for understanding physics ranging from the elementary particles to states of matter. For example, the superconducting state breaks global gauge symmetry, and unconventional superconductors can break additional symmetries. In particular, spin rotational symmetry is expected to be broken in spin-triplet superconductors. However, experimental evidence for such symmetry breaking has not been obtained so far in any candidate compounds. We report 77Se nuclear magnetic resonance measurements which showed that spin rotation symmetry is spontaneously broken in the hexagonal plane of the electron-doped topological insulator Cu0.3Bi2Se3 below the superconducting transition temperature Tc =3.4 K. Our results not only establish spin-triplet (odd parity) superconductivity in this compound, but also serve to lay a foundation for the research of topological superconductivity (Ref.). We will also report the doping mechanism and superconductivity in Sn1-xInxTe.

Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

Science.gov (United States)

Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

2005-10-01

Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

Superconductivity, Pairing Symmetry, and Disorder in the Doped Topological Insulator Sn_1-xIn_xTe for x >= 0.10.

Energy Technology Data Exchange (ETDEWEB)

Smylie, M. P.; Claus, H.; Kwok, W. -K.; Louden, E. R.; Eskildsen, M. R.; Sefat, A. S.; Zhong, R. D.; Schneeloch, J.; Gu, G. D.; Bokari, E.; Niraula, P. M.; Kayani, A.; Dewhurst, C. D.; Snezhko, A.; Welp, U.

2018-01-19

The temperature dependence of the London penetration depth Delta lambda(T) in the superconducting doped topological crystalline insulator Sn1-xInxTe was measured down to 450 mK for two different doping levels, x approximate to 0.45 (optimally doped) and x approximate to 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T-c, indicating that ferroelectric interactions do not compete with superconductivity.

DWPF Stage 2: precipitation test program at Mott

International Nuclear Information System (INIS)

Schmitz, M.A.

1981-01-01

This memorandum covers the results of the test program conducted at Mott Metallurgical to determine cross-flow filter performance on potassium/cesium tetraphenylborate (K/Cs TPB)-sodium titanate slurries. The test program was designed to provide essential basic operating data to supplement the 1000-gallon cold process tests planned at TNX and the shielded cell tests with actual waste supernate planned by Chemical Technology. The specific Mott Metallurgical test objectives are outlined in DPST-81-722. During the Mott Metallurgical test program an average filtrate flow rate of approximately 0.05 gpm/ft 2 was repeatedly demonstrated over an 8-hr run with 0.5 micron filter elements. Initial Fe/Al sludge concentrations up to 150 ppM did not affect filter performance. Rheologies of the K/Cs TPB-sodium titanate slurries up to 13% by weight, the maximum concentration achieved, are summarized. Several recommendations are made to act as a guide for optimal filter performance

Spin-Orbital Excitations in Ca2RuO4 Revealed by Resonant Inelastic X-Ray Scattering

DEFF Research Database (Denmark)

Das, L.; Forte, F.; Fittipaldi, R.

2018-01-01

The strongly correlated insulator Ca2RuO4 is considered as a paradigmatic realization of both spin-orbital physics and a band-Mott insulating phase, characterized by orbitally selective coexistence of a band and a Mott gap. We present a high resolution oxygen K-edge resonant inelastic x-ray scatt......-Mott scenario. The high-energy excitations correspond to intra-atomic singlet-triplet transitions at an energy scale set by Hund's coupling. Our findings give a unifying picture of the spin and orbital excitations in the band-Mott insulator Ca2RuO4.......The strongly correlated insulator Ca2RuO4 is considered as a paradigmatic realization of both spin-orbital physics and a band-Mott insulating phase, characterized by orbitally selective coexistence of a band and a Mott gap. We present a high resolution oxygen K-edge resonant inelastic x......-ray scattering study of the antiferromagnetic Mott insulating state of Ca2RuO4. A set of low-energy (about 80 and 400 meV) and high-energy (about 1.3 and 2.2 eV) excitations are reported, which show strong incident light polarization dependence. Our results strongly support a spin-orbit coupled band...

First principles description of the insulator-metal transition in europium monoxide

KAUST Repository

Wang, Hao

2012-02-01

Europium monoxide, EuO, is a ferromagnetic insulator. Its electronic structure under pressure and doping is investigated by means of density functional theory. We employ spin polarized electronic structure calculations including onsite electron-electron interaction for the localized Eu 4f and 5d electrons. Our results show that under pressure the ferromagnetism is stable, both for hydrostatic and uniaxial pressure, while the compound undergoes an insulator-metal transition. The insulator-metal transition in O deficient and Gd doped EuO is reproduced for an impurity concentration of 6.25%. A 10 monolayer thick EuO(1 0 0) thin film is predicted to be an insulator with a narrow band gap of 0.08 eV. © 2011 Elsevier B.V. All rights reserved.

Propagation of quantum correlations after a quench in the Mott-insulator regime of the Bose-Hubbard model

International Nuclear Information System (INIS)

Krutitsky, Konstantin V.; Navez, Patrick; Schuetzhold, Ralf; Queisser, Friedemann

2014-01-01

We study a quantum quench in the Bose-Hubbard model where the tunneling rate J is suddenly switched from zero to a finite value in the Mott regime. In order to solve the many-body quantum dynamics far from equilibrium, we consider the reduced density matrices for a finite number of lattice sites and split them up into on-site density operators, i.e., the mean field, plus two-point and three-point correlations etc. Neglecting three-point and higher correlations, we are able to numerically simulate the time-evolution of the on-site density matrices and the two-point quantum correlations (e.g., their effective light-cone structure) for a comparably large number of lattice sites. (orig.)

Experimental and density functional study of Mn doped Bi2Te3 topological insulator

Directory of Open Access Journals (Sweden)

A. Ghasemi

2016-12-01

Full Text Available We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

Optical study on doped polyaniline composite films

International Nuclear Information System (INIS)

Li, G; Zheng, P; Wang, N L; Long, Y Z; Chen, Z J; Li, J C; Wan, M X

2004-01-01

Localization driven by disorder has a strong influence on the conducting properties of conducting polymers. Some authors hold the opinion that disorder in the material is homogeneous and that the conducting polymer is a disordered metal close to the Anderson-Mott metal-insulator (MI) transition, while others treat the disorder as inhomogeneous and have the opinion that conducting polymers are a composite of ordered metallic regions and disordered insulating regions. The morphology of conducting polymers is an important factor that has an influence on the type and extent of disorder. Different protonic acids used as dopants and moisture have influence on the polymer chain arrangement and interchain interactions. We performed optical reflectance measurements on several PANI-CSA/PANI-DBSA composite films with different dopant ratios and moisture contents. Optical conductivity and the real part of the dielectric function are calculated by Kramers-Kronig (KK) relations. σ 1 (ο) and ε 1 (ο) deviate from the simple Drude model in the low frequency range and the tendencies of the three sample are different and non-monotonic. The localization modified Drude model (LMD) in the framework of the Anderson-Mott theory cannot give a good fit to the experimental data. By introducing the distribution of relaxation time into the LMD, reasonable fits for all three samples are obtained. This result supports the inhomogeneous picture

Effective field theory and integrability in two-dimensional Mott transition

International Nuclear Information System (INIS)

Bottesi, Federico L.; Zemba, Guillermo R.

2011-01-01

Highlights: → Mott transition in 2d lattice fermion model. → 3D integrability out of 2D. → Effective field theory for Mott transition in 2d. → Double Chern-Simons. → d-Density waves. - Abstract: We study the Mott transition in a two-dimensional lattice spinless fermion model with nearest neighbors density-density interactions. By means of a two-dimensional Jordan-Wigner transformation, the model is mapped onto the lattice XXZ spin model, which is shown to possess a quantum group symmetry as a consequence of a recently found solution of the Zamolodchikov tetrahedron equation. A projection (from three to two space-time dimensions) property of the solution is used to identify the symmetry of the model at the Mott critical point as U q (sl(2)-circumflex)xU q (sl(2)-circumflex), with deformation parameter q = -1. Based on this result, the low-energy effective field theory for the model is obtained and shown to be a lattice double Chern-Simons theory with coupling constant k = 1 (with the standard normalization). By further employing the effective filed theory methods, we show that the Mott transition that arises is of topological nature, with vortices in an antiferromagnetic array and matter currents characterized by a d-density wave order parameter. We also analyze the behavior of the system upon weak coupling, and conclude that it undergoes a quantum gas-liquid transition which belongs to the Ising universality class.

B-cell lymphoma with Mott cell differentiation in two young adult dogs.

Science.gov (United States)

Stacy, Nicole I; Nabity, Mary B; Hackendahl, Nicole; Buote, Melanie; Ward, Jennifer; Ginn, Pamela E; Vernau, William; Clapp, William L; Harvey, John W

2009-03-01

Two young adult dogs with gastrointestinal signs were each found to have an intra-abdominal mass based on physical examination and diagnostic imaging. On exploratory laparotomy, small intestinal masses and mesenteric lymphadenopathy were found in both dogs; a liver mass was also found in dog 1. Cytologic and histologic examination of intestinal and liver masses and mesenteric lymph nodes revealed 2 distinct lymphoid cell populations: lymphoblasts and atypical Mott cells. With Romanowsky stains, the atypical Mott cells contained many discrete, clear to pale blue cytoplasmic inclusions consistent with Russell bodies that were positive by immunohistochemistry for IgM and CD79a in both dogs and for IgG in dog 2. The Mott cells and occasional lymphoblasts stained strongly positive with periodic acid-Schiff. Using flow cytometric immunophenotyping in dog 1, 60% of peripheral blood mononuclear cells and 85% of cells in an affected lymph node were positive for CD21, CD79a, IgM, and MCH II, indicative of B-cells. With electron microscopy, disorganized and dilated endoplasmic reticulum was seen in Mott cells in tumors from both dogs. Antigen receptor gene rearrangement analysis of lymph node and intestinal masses indicated a clonal B-cell population. Based on cell morphology, tissue involvement, and evidence for clonal B-cell proliferation, we diagnosed neoplasms involving Mott cells. To the authors' knowledge, this is the second report of Mott cell tumors or, more appropriately, B-cell lymphoma with Mott cell differentiation, in dogs. More complete characterization of this neoplasm requires further investigation of additional cases. This lymphoproliferative disease should be considered as a differential diagnosis for canine gastrointestinal tumors.

Ladder physics in the spin fermion model

Science.gov (United States)

Tsvelik, A. M.

2017-05-01

A link is established between the spin fermion (SF) model of the cuprates and the approach based on the analogy between the physics of doped Mott insulators in two dimensions and the physics of fermionic ladders. This enables one to use nonperturbative results derived for fermionic ladders to move beyond the large-N approximation in the SF model. It is shown that the paramagnon exchange postulated in the SF model has exactly the right form to facilitate the emergence of the fully gapped d -Mott state in the region of the Brillouin zone at the hot spots of the Fermi surface. Hence, the SF model provides an adequate description of the pseudogap.

Ladder physics in the spin fermion model

International Nuclear Information System (INIS)

Tsvelik, A. M.

2017-01-01

A link is established between the spin fermion (SF) model of the cuprates and the approach based on the analogy between the physics of doped Mott insulators in two dimensions and the physics of fermionic ladders. This enables one to use nonperturbative results derived for fermionic ladders to move beyond the large-N approximation in the SF model. Here, it is shown that the paramagnon exchange postulated in the SF model has exactly the right form to facilitate the emergence of the fully gapped d-Mott state in the region of the Brillouin zone at the hot spots of the Fermi surface. Hence, the SF model provides an adequate description of the pseudogap.

Metal-insulator transition in SrTi1−xVxO3 thin films

International Nuclear Information System (INIS)

Gu, Man; Wolf, Stuart A.; Lu, Jiwei

2013-01-01

Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

Wannier-Mott Excitons in Nanoscale Molecular Ices

Science.gov (United States)

Chen, Y.-J.; Muñoz Caro, G. M.; Aparicio, S.; Jiménez-Escobar, A.; Lasne, J.; Rosu-Finsen, A.; McCoustra, M. R. S.; Cassidy, A. M.; Field, D.

2017-10-01

The absorption of light to create Wannier-Mott excitons is a fundamental feature dictating the optical and photovoltaic properties of low band gap, high permittivity semiconductors. Such excitons, with an electron-hole separation an order of magnitude greater than lattice dimensions, are largely limited to these semiconductors but here we find evidence of Wannier-Mott exciton formation in solid carbon monoxide (CO) with a band gap of >8 eV and a low electrical permittivity. This is established through the observation that a change of a few degrees K in deposition temperature can shift the electronic absorption spectra of solid CO by several hundred wave numbers, coupled with the recent discovery that deposition of CO leads to the spontaneous formation of electric fields within the film. These so-called spontelectric fields, here approaching 4 ×107 V m-1 , are strongly temperature dependent. We find that a simple electrostatic model reproduces the observed temperature dependent spectral shifts based on the Stark effect on a hole and electron residing several nm apart, identifying the presence of Wannier-Mott excitons. The spontelectric effect in CO simultaneously explains the long-standing enigma of the sensitivity of vacuum ultraviolet spectra to the deposition temperature.

Optical spectral weight anomalies and strong correlation

International Nuclear Information System (INIS)

Toschi, A.; Capone, M.; Ortolani, M.; Calvani, P.; Lupi, S.; Castellani, C.

2007-01-01

The anomalous behavior observed in the optical spectral weight (W) of the cuprates provides valuable information about the physics of these compounds. Both the doping and the temperature dependences of W are hardly explained through conventional estimates based on the f-sum rule. By computing the optical conductivity of the doped Hubbard model with the Dynamical Mean Field Theory, we point out that the strong correlation plays a key role in determining the basic features of the observed anomalies: the proximity to a Mott insulating phase accounts simultaneously for the strong temperature dependence of W and for its zero temperature value

Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

International Nuclear Information System (INIS)

Fernandez-Pacheco, A.; Ibarra, M. R.; De Teresa, J. M.; Cordoba, R.

2009-01-01

We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 10 8 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness >150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters.

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

Interaction effects and quantum phase transitions in topological insulators

International Nuclear Information System (INIS)

Varney, Christopher N.; Sun Kai; Galitski, Victor; Rigol, Marcos

2010-01-01

We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting Haldane model on a honeycomb lattice with known topological properties and demonstrate that these properties are already evident in small clusters. Next, we consider interacting fermions by introducing repulsive nearest-neighbor interactions. A first-order quantum phase transition was discovered at finite interaction strength between the topological band insulator and a topologically trivial Mott insulating phase by use of the fidelity metric and the charge-density-wave structure factor. We construct the phase diagram at T=0 as a function of the interaction strength and the complex phase for the next-nearest-neighbor hoppings. Finally, we consider the Haldane model with interacting hard-core bosons, where no evidence for a topological phase is observed. An important general conclusion of our work is that despite the intrinsic nonlocality of topological phases their key topological properties manifest themselves already in small systems and therefore can be studied numerically via exact diagonalization and observed experimentally, e.g., with trapped ions and cold atoms in optical lattices.

Winding Up of the Wave-Function Phase by an Insulator-to-Superfluid Transition in a Ring of Coupled Bose-Einstein Condensates

International Nuclear Information System (INIS)

Dziarmaga, Jacek; Meisner, Jakub; Zurek, Wojciech H.

2008-01-01

We study phase transition from the Mott insulator to superfluid in a periodic optical lattice. Kibble-Zurek mechanism predicts buildup of winding number through random walk of BEC phases, with the step size scaling as a third root of transition rate. We confirm this and demonstrate that this scaling accounts for the net winding number after the transition

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

International Nuclear Information System (INIS)

Yatskiv, R.; Zdansky, K.; Pekarek, L.

2009-01-01

Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241 Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

Magnetic states, correlation effects and metal-insulator transition in FCC lattice

Science.gov (United States)

Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

2016-12-01

The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

arXiv Gauge Topological Nature of the Superconductor-Insulator Transition

CERN Document Server

Diamantini, M.C.; Lukyanchuk, I.; Vinokur, V.M.

It has long been believed that, at absolute zero, electrons can form only one quantum coherent state, a superconductor. Yet, several two dimensional superconducting systems were found to harbor the superinsulating state with infinite resistance, a mirror image of superconductivity, and a metallic state often referred to as Bose metal, characterized by finite longitudinal and vanishing Hall resistances. The nature of these novel and mysterious quantum coherent states is the subject of intense study.Here, we propose a topological gauge description of the superconductor-insulator transition (SIT) that enables us to identify the underlying mechanism of superinsulation as Polyakov's linear confinement of Cooper pairs via instantons. We find a criterion defining conditions for either a direct SIT or for the SIT via the intermediate Bose metal and demonstrate that this Bose metal phase is a Mott topological insulator in which the Cooper pair-vortex liquid is frozen by Aharonov-Bohm interactions.

Mott scattering as a probe of long range QCD

International Nuclear Information System (INIS)

Bertulani, C.A.; Balantekin, A.B.

1993-12-01

We investigate the possibility of using the Mott scattering between identical nuclei to assess the existence of long range QCD, e.g., a color Van der Waals interaction, as suggested recently. Among other effects which were not considered before, the tail of the nuclear potential, emission of radiation by Bremsstrahlung, atomic screening, emission of delta-electrons, and the quasi-molecule binding are included in our calculations. We show that the sum of these effects can explain the observed shift in the Mott oscillations in a recent experiment. (orig.)

Effect of Ti doping on magnetic properties and magnetoresistance in LaSr2Mn2O7

International Nuclear Information System (INIS)

Feng, J.; Che, P.; Wang, J.P.; Lu, M.F.; Liu, J.F.; Cao, X.Q.; Meng, J.

2005-01-01

The effect of Ti substitution for Mn on magnetic and transport properties has been investigated for layered manganese oxides LaSr 2 Mn 2-x Ti x O 7 . Titanium doping hampered the canted antiferromagnetic (AFM) exchange at low temperature and their Neel temperature (T N ) decreased from 138 K (x = 0) to 106 K (x = 0.1). Meanwhile, spin glass, charge ordering and metal-insulator transition are suppressed by Ti addition. This can be attributed to Mn-site disorder caused by random substitution of Ti 4+ . The suppression of charge ordering leads to magntetoresistance (MR) ratio increase and MR reaches maximum at x = 0.3. The resistivity increases obviously with x increasing because of double exchange interaction channel broken by Ti 4+ addition. The resistivity of all samples in low temperature range fits to the Mott's variable range hopping (VRH) model, while it fits to nearest neighbor hopping of small polarons model in high temperature range. We also found that both disorder and distortion in A-site and B-site will induce the similar effect to electrical and magnetic properties

Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons

KAUST Repository

Cha, Judy J.; Williams, James R.; Kong, Desheng; Meister, Stefan; Peng, Hailin; Bestwick, Andrew J.; Gallagher, Patrick; Goldhaber-Gordon, David; Cui, Yi

2010-01-01

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surfaceto-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi 2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ∼2 %. low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. © 2010 American Chemical Society.

Magnetic Doping and Kondo Effect in Bi 2 Se 3 Nanoribbons

KAUST Repository

Cha, Judy J.

2010-03-10

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surfaceto-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically doped Bi 2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ∼2 %. low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. © 2010 American Chemical Society.

Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

Directory of Open Access Journals (Sweden)

Michael E. Flatté

2017-05-01

Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

Superconductivity and ferromagnetism in topological insulators

Science.gov (United States)

Zhang, Duming

Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to

Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

Directory of Open Access Journals (Sweden)

Yuichi Otsuka

2016-03-01

Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

First-order metal-insulator transitions in the extended Hubbard model due to self-consistent screening of the effective interaction

Science.gov (United States)

Schüler, M.; van Loon, E. G. C. P.; Katsnelson, M. I.; Wehling, T. O.

2018-04-01

While the Hubbard model is the standard model to study Mott metal-insulator transitions, it is still unclear to what extent it can describe metal-insulator transitions in real solids, where nonlocal Coulomb interactions are always present. By using a variational principle, we clarify this issue for short- and long-range nonlocal Coulomb interactions for half-filled systems on bipartite lattices. We find that repulsive nonlocal interactions generally stabilize the Fermi-liquid regime. The metal-insulator phase boundary is shifted to larger interaction strengths to leading order linearly with nonlocal interactions. Importantly, nonlocal interactions can raise the order of the metal-insulator transition. We present a detailed analysis of how the dimension and geometry of the lattice as well as the temperature determine the critical nonlocal interaction leading to a first-order transition: for systems in more than two dimensions with nonzero density of states at the Fermi energy the critical nonlocal interaction is arbitrarily small; otherwise, it is finite.

Theory of strain-controlled magnetotransport and stabilization of the ferromagnetic insulating phase in manganite thin films.

Science.gov (United States)

Mukherjee, Anamitra; Cole, William S; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

2013-04-12

We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

Pseudogap and competing states in underdoped cuprates

International Nuclear Information System (INIS)

Lee, Patrick A.

2004-01-01

I shall argue that the high T c problem is the problem of doping into a Mott insulator. Furthermore, the well documented pseudo-gap phenomenon in underdoped cuprates holds the key to understanding this physics. Phase fluctuation alone cannot explain this phenomenon, but there is a clear need to identify a competing state which lives in the vortex core. The staggered flux state is a good candidate for the competing state and experimental tests of these ideas will be discussed

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

International Nuclear Information System (INIS)

Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

2014-01-01

A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

Beginning point of metal to insulator transition for Bi-2223 superconducting matrix doped with Eu nanoparticles

International Nuclear Information System (INIS)

Yildirim, G.

2013-01-01

Highlights: •Standard measurements such as bulk density, ρ-T, J ct , XRD, SEM and EDX examinations for characterization of the samples. •Role of Eu inclusions on the microstructural, electrical and superconducting properties of Bi-2223 phase. •Determination of metal to insulator transition due to Eu impurities in the Bi-2223 superconducting matrix. •From the Eu content level of x = 0.5 onwards, destruction of the superconducting phases. •Constant retrogression of the microstructural and superconducting properties with the Eu individuals. -- Abstract: This comprehensive study examines the change of the microstructural, electrical and superconducting properties of the Eu doped Bi 1.8 Pb 0.4 Eu x Sr 2 Ca 2.2 Cu 3.0 O y ceramic cuprates (with x ⩽ 0.7) produced by the conventional solid state reaction method at the constant annealing temperature of 840 °C for 24 h with the aid of the standard characterization measurements such as bulk density, dc resistivity (ρ-T), transport critical current density (J c ), X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron dispersive X-ray (EDX) examinations. For the full characterization of the pure and Eu doped Bi-2223 samples, the degree of granularity (from the bulk density and porosity measurements); the room temperature resistivity, onset–offset critical transition temperature, variation of transition temperature, hole carrier concentration, spin-gap opening temperature and thermodynamic fluctuations (from the dc resistivity experiments); the texturing, crystal structure, crystallite size, phase purity and cell parameters (from the XRD investigations); the variation of the flux pinning centers and the boundary weak-links between the superconducting grains (from the critical current density values); the crystallinity, specimen surface morphology, grain connectivity between the superconducting grains and grain size distribution (from the SEM examinations), the elemental compositions and

Topological insulator: Bi{sub 2}Se{sub 3}/polyvinyl alcohol film-assisted multi-wavelength ultrafast erbium-doped fiber laser

Energy Technology Data Exchange (ETDEWEB)

Guo, Bo; Yao, Yong, E-mail: yaoyong@hit.edu.cn; Yang, Yan-Fu; Yuan, Yi-Jun; Wang, Rui-Lai [Department of Electronic and Information Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Wang, Shu-Guang; Ren, Zhong-Hua [Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Yan, Bo [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

2015-02-14

We experimentally demonstrate a multi-wavelength ultrafast erbium-doped fiber laser incorporating a μm-scale topological insulator: Bi{sub 2}Se{sub 3}/Polyvinyl Alcohol film as both an excellent saturable absorber for mode-locking and a high-nonlinear medium to induce a giant third order optical nonlinear effect for mitigating the mode competition of erbium-doped fiber laser and stabilizing the multi-wavelength oscillation. By properly adjusting the pump power and the polarization state, the single-, dual-, triple-, four-wavelength mode-locking pulse could be stably initiated. For the four-wavelength operation, we obtain its pulse width of ∼22 ps and a fundamental repetition rate of 8.83 MHz. The fiber laser exhibits the maximum output power of 9.7 mW with the pulse energy of 1.1 nJ and peak power of 50 W at the pump power of 155 mW. Our study shows that the simple, stable, low-cost multi-wavelength ultrafast fiber laser could be applied in various potential fields, such as optical communication, biomedical research, and radar system.

Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

Directory of Open Access Journals (Sweden)

Deepak Kumar Kaushik

2017-01-01

Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

Science.gov (United States)

Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Novel phase transitions in B-site doped manganites

International Nuclear Information System (INIS)

Popovic, Z.V.; Cantarero, A.; Thijssen, W.H.A.; Paunovic, N.; Dohcevic-Mitrovic, Z.; Sapina, F.

2005-01-01

We have examined the infrared reflectivity and the electrical resistivity of La 1- x [Sr(Ba)] x Mn 1- z [Cu(Zn)] z O 3 samples in ferromagnetic metallic and insulator regime. Several phase transitions are observed, the most obvious being the transition from a ferromagnetic metallic to a ferromagnetic insulator phase that is related to the formation of short-range orbitally ordered domains. The temperature T 1 of the phase transition is dependent on doping concentration and for optimally doped samples (∼32% of Mn 4+ ions) we have found T 1 ∼0.93 T C

Topological insulators Dirac equation in condensed matter

CERN Document Server

Shen, Shun-Qing

2017-01-01

This new edition presents a unified description of these insulators from one to three dimensions based on the modified Dirac equation. It derives a series of solutions of the bound states near the boundary, and describes the current status of these solutions. Readers are introduced to topological invariants and their applications to a variety of systems from one-dimensional polyacetylene, to two-dimensional quantum spin Hall effect and p-wave superconductors, three-dimensional topological insulators and superconductors or superfluids, and topological Weyl semimetals, helping them to better understand this fascinating field. To reflect research advances in topological insulators, several parts of the book have been updated for the second edition, including: Spin-Triplet Superconductors, Superconductivity in Doped Topological Insulators, Detection of Majorana Fermions and so on. In particular, the book features a new chapter on Weyl semimetals, a topic that has attracted considerable attention and has already b...

Comparative studies of the structure, morphology and electrical conductivity of polyaniline weakly doped with chlorocarboxylic acids

International Nuclear Information System (INIS)

Gmati, Fethi; Fattoum, Arbi; Bohli, Nadra; Dhaoui, Wadia; Mohamed, Abdellatif Belhadj

2007-01-01

We report the results of studies on two series of polyaniline (PANI), doped with dichloroacetic (DCA) and trichloroacetic (TCA) acids, respectively, at various doping rates and obtained by the in situ polymerization method. Samples were characterized by x-ray diffraction, scanning electron microscopy and conductivity measurements. The direct current (dc) and alternating current (ac) electrical conductivities of PANI salts have been investigated in the temperature range 100-310 K and frequency range 7-10 6 Hz. The results of this study indicate better chain ordering and higher conductivity for PANI doped with TCA. The dc conductivity of all samples is suitably fitted to Mott's three-dimensional variable-range hopping (VRH) model. Different Mott parameters such as characteristic temperature T 0 , density of states at the Fermi level (N(E F )), average hopping energy (W) and the average hopping distance (R) have been evaluated. The dependence of such values on the dopant acid used is discussed. At high frequencies, the ac conductivity follows the power law σ ac (ω,T) A(T)ω s(T,ω) , which is characteristic for charge transport in disordered materials by hopping or tunnelling processes. The observed increase in the frequency exponent s with temperature suggests that the small-polaron tunnelling model best describes the dominant ac conduction mechanism. A direct correlation between conductivity, structure and morphology was obtained in our systems

Hundness versus Mottness in a three-band Hund model with relevance for iron-pnictides

Energy Technology Data Exchange (ETDEWEB)

Stadler, Katharina M.; Delft, Jan von; Weichselbaum, Andreas [Ludwig Maximilians University, Munich (Germany); Yin, Zhiping; Kotliar, Gabriel [Rutgers University, New Jersey (United States)

2016-07-01

The recently discovered iron pnictide superconductors (as well as chalcogenides, ruthenates, and other 4d transition metal oxides) show puzzling anomalous properties, like a coherence-incoherence crossover, also in the normal state. While there is consensus about strong correlation effects playing a key role in these materials, their precise origin (Coulomb repulsion or Hund's rule coupling between electrons of different orbitals) has been under debate as one of the major open questions in the field many years. In a recent detailed study of the Hund metal problem the coherence-incoherence crossover was shown to be connected to spin-orbital separation and to be clearly driven by Hund's rule coupling. In order to better understand the differences between Mott insulators and Hund metals we explore the phase diagram for a three-band model with Coulomb repulsion and Hund's rule coupling on a Bethe lattice at 1/3 filling using the numerical renormalization group to obtain a numerically exact dynamical mean-field theory solution.

Metal-insulator transition in vanadium dioxide

International Nuclear Information System (INIS)

Zylbersztejn, A.; Mott, N.F.

1975-01-01

The basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material. The major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidence by studies of the magnetic properties of V 1 -/subx/Cr/subx/O 2 alloys, is further demonstrated from an analysis of their electrical properties. An analysis of the magnetic susceptibility of niobium-doped VO 2 yields a picture for the current carrier in the low-temperature phase in which it is accompanied by a spin cloud (owing to Hund's-rule coupling), and has therefore an enhanced mass (m approx. = 60m 0 ). Semiconducting vanadium dioxide turns out to be a borderline case for a classical band-transport description; in the alloys at high doping levels, Anderson localization with hopping transport can take place. Whereas it is shown that the insulating phase cannot be described correctly without taking into account the Hubbard correlation energy, we find that the properties of the metallic phase are mainly determined by the band structure. Metallic VO 2 is, in our view, similar to transition metals like Pt or Pd: electrons in a comparatively wide band screening out the interaction between the electrons in a narrow overlapping band. The magnetic susceptibility is described as exchange enhanced. The large density of states at the Fermi level yields a substantial contribution of the entropy of the metallic electrons to the latent heat. The crystalline distortion removes the band degeneracy so that the correlation energy becomes comparable with the band width and a metal-insulator transition takes place

Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

Science.gov (United States)

2016-04-01

of a thin layer of topological insulator Bi2Se3 with the transmission of T = 50%. We apply magnetic field B=3 tesla normal to the sample and parallel...nonlinear induced by magnetic field in the Topological Insulator Bi2Se3 and Molybdenum Disulfide MoS2. The nonlinear effect is pulse broadening...Topological Insulator Q- Switched Erbium-Doped Fiber Laser”, IEEE J. Sel. Top. Quant. Electron., 20, 0900508 (2014). [2]. Shuqing Chen et al, “Stable Q

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

Science.gov (United States)

Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

2018-02-01

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Spin-Orbital Excitations in Ca_{2}RuO_{4} Revealed by Resonant Inelastic X-Ray Scattering

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L. Das

2018-03-01

Full Text Available The strongly correlated insulator Ca_{2}RuO_{4} is considered as a paradigmatic realization of both spin-orbital physics and a band-Mott insulating phase, characterized by orbitally selective coexistence of a band and a Mott gap. We present a high resolution oxygen K-edge resonant inelastic x-ray scattering study of the antiferromagnetic Mott insulating state of Ca_{2}RuO_{4}. A set of low-energy (about 80 and 400 meV and high-energy (about 1.3 and 2.2 eV excitations are reported, which show strong incident light polarization dependence. Our results strongly support a spin-orbit coupled band-Mott scenario and explore in detail the nature of its exotic excitations. Guided by theoretical modeling, we interpret the low-energy excitations as a result of composite spin-orbital excitations. Their nature unveils the intricate interplay of crystal-field splitting and spin-orbit coupling in the band-Mott scenario. The high-energy excitations correspond to intra-atomic singlet-triplet transitions at an energy scale set by Hund’s coupling. Our findings give a unifying picture of the spin and orbital excitations in the band-Mott insulator Ca_{2}RuO_{4}.

Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

Science.gov (United States)

Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip

2016-09-01

Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

Electronic properties of newly-discovered doped semiconductors. Superconductivity in diamond and transport properties of RuIn{sub 3}; Elektronische Eigenschaften neuer dotierter Halbleiter. Supraleitung im Diamant und Transporteigenschaften von RuIn{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Bogdanov, D.A.

2006-08-01

The properties of the boron-doped diamond are sensitive to the boron concentration. A semiconducting behaviour occurs at low boron concentration and transport properties are given by a hopping-mechanism. The conductivity increases for higher boron concentration. The Mott metal to insulator transition takes place at a critical boron concentration. In the metallic phase superconductivity is observed. The critical temperatures of the superconducting transition are below 3 K. In this work, the influence of boron to the electronic properties, like conductivity and magneto resistance, was studied in the vicinity of the metal to insulator transition point. The superconducting properties (critical temperature, upper critical field) were studied down to 50 mK and compared to the conventional theory of the electron-phonon coupled superconductors. The properties of polycrystalline RuIn{sub 3} are reported in few publications to be metallic. In this work single crystals of this material were grown and analysed. We observe a semiconducting behaviour with an intrinsic gap of 0.4-0.5 eV. The previously reported metallic behaviour could be interpreted in this work as influence of the elementary indium in the samples. The measurements of the specific heat at low temperatures and LDA band structure calculations confirm the semiconducting properties and the value of the semiconducting gap. (orig.)

Novel phase transitions in B-site doped manganites

Energy Technology Data Exchange (ETDEWEB)

Popovic, Z.V. [Institute of Physics, P.O. Box 68, 11080 Belgrade/Zemun (Serbia and Montenegro)]. E-mail: zoran.popovic@phy.bg.ac.yu; Cantarero, A. [Materials Science Institute, University of Valencia, P.O. Box 22085, 46071 Valencia (Spain); Thijssen, W.H.A. [Kamerlingh Onnes Laboratorium, Leiden University, Postbus 9504, 2300 RA Leiden (Netherlands); Paunovic, N. [Institute of Physics, P.O. Box 68, 11080 Belgrade/Zemun (Serbia and Montenegro); Dohcevic-Mitrovic, Z. [Institute of Physics, P.O. Box 68, 11080 Belgrade/Zemun (Serbia and Montenegro); Sapina, F. [Materials Science Institute, University of Valencia, P.O. Box 22085, 46071 Valencia (Spain)

2005-04-30

We have examined the infrared reflectivity and the electrical resistivity of La{sub 1-} {sub x} [Sr(Ba)] {sub x} Mn{sub 1-} {sub z} [Cu(Zn)] {sub z} O{sub 3} samples in ferromagnetic metallic and insulator regime. Several phase transitions are observed, the most obvious being the transition from a ferromagnetic metallic to a ferromagnetic insulator phase that is related to the formation of short-range orbitally ordered domains. The temperature T {sub 1} of the phase transition is dependent on doping concentration and for optimally doped samples ({approx}32% of Mn{sup 4+} ions) we have found T {sub 1}{approx}0.93 T {sub C}.

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

Directory of Open Access Journals (Sweden)

Kenichi Miyazaki

2016-05-01

Full Text Available We investigated the effects of chromium (Cr and niobium (Nb co-doping on the temperature coefficient of resistance (TCR and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2 films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

Conductive Langmuir-Blodgett films. Doping with iodine or self-doping?

International Nuclear Information System (INIS)

Bourgoin, Jean-Philippe

1991-01-01

In this research thesis dealing with molecular architecture, the author reports the testing of two strategies aiming at reducing the importance of defects in conductive Langmuir-Blodgett films, and at enabling the production of conductive mono-molecular layer. According to the first strategy, conductive films are obtained after doping based on the use of iodine vapours of an insulating precursor film of molecules derived from BEDT-TTF. The so-produced films display a high conductivity and can be used as sensitive elements in gas sensors, but remain macroscopically insulating, probably because molecular reorganisation, as shown by a study based on different techniques (IR and UV linear dichroism, Raman spectroscopy, X ray diffraction), generates too many defects. The second strategy, self-doping, is based on a mixing of two derivatives of the same electro-active nucleus (the TCNQ, tetracyanoquinodimethane), an amphiphilic one and a semi-amphiphilic one. This strategy opens new perspectives in molecular engineering as it is a general way to produce conductive LB films from TCNQ [fr

Phase-field model of insulator-to-metal transition in VO2 under an electric field

Science.gov (United States)

Shi, Yin; Chen, Long-Qing

2018-05-01

The roles of an electric field and electronic doping in insulator-to-metal transitions are still not well understood. Here we formulated a phase-field model of insulator-to-metal transitions by taking into account both structural and electronic instabilities as well as free electrons and holes in VO2, a strongly correlated transition-metal oxide. Our phase-field simulations demonstrate that in a VO2 slab under a uniform electric field, an abrupt universal resistive transition occurs inside the supercooling region, in sharp contrast to the conventional Landau-Zener smooth electric breakdown. We also show that hole doping may decouple the structural and electronic phase transitions in VO2, leading to a metastable metallic monoclinic phase which could be stabilized through a geometrical confinement and the size effect. This work provides a general mesoscale thermodynamic framework for understanding the influences of electric field, electronic doping, and stress and strain on insulator-to-metal transitions and the corresponding mesoscale domain structure evolution in VO2 and related strongly correlated systems.

Spin dynamics of the Kondo insulator CeNiSn approaching the metallic phase

DEFF Research Database (Denmark)

Schröder, A.; Aeppli, G.; Mason, T.E.

1997-01-01

The spin dynamics of Kondo insulators has been studied by high-resolution magnetic neutron spectroscopy at a triple-axes spectrometer on CeNi1-xCuxSn single crystals using a vertical 9 T magnet. While upon doping (x = 0.13) the spin gap of the Kondo insulator CeNiSn collapses at the transition to...

Hund's Induced Fermi-Liquid Instabilities and Enhanced Quasiparticle Interactions.

Science.gov (United States)

De' Medici, Luca

2017-04-21

Hund's coupling is shown to generally favor, in a doped half-filled Mott insulator, an increase in the compressibility culminating in a Fermi-liquid instability towards phase separation. The largest effect is found near the frontier between an ordinary and an orbitally decoupled ("Hund's") metal. The increased compressibility implies an enhancement of quasiparticle scattering, thus favoring other possible symmetry breakings. This physics is shown to happen in simulations of the 122 Fe-based superconductors, possibly implying the relevance of this mechanism in the enhancement of the critical temperature for superconductivity.

Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu, Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-11-25

Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

Electrical and spectroscopic characterization of polyaniline-polyvinyl chloride (PANI-PVC) blends doped with sodium thiosulphate

International Nuclear Information System (INIS)

Ameen, Sadia; Ali, Vazid; Zulfequar, M.; Mazharul Haq, M.; Husain, M.

2008-01-01

Polyaniline is doped with sodium thiosulphate in aqueous tetrahydrofuran (THF) and the blended films have been prepared by changing the amount of doped polyaniline (PANI) in the fixed amount of polyvinyl chloride (PVC). The electrical conductivity of various samples of polyaniline-polyvinyl chloride (PANI-PVC) blends has been studied to see the effect of dopant in the temperature range 300-400 K. Mott's parameters are used to explain the conduction mechanism. Different parameters such as pre-exponential factor (σ 0 ), activation energy (ΔE) and T 0 have also been calculated to see the effect of chemical doping. The crystallinity of the blends is explained on the basis of T 0 . The calculated values of T 0 show that crystallinity increases with an increase of doped PANI in PANI-PVC blends. Fourier transform-infrared (FTIR) spectroscopy is done to explore the nature and interaction of dopant into the polymeric chain

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

Energy Technology Data Exchange (ETDEWEB)

Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

2014-04-14

A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

Science.gov (United States)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

MUTIL, Asymmetry Factor of Mott Cross-Sections for Electron, Positron Scattering

International Nuclear Information System (INIS)

Idoeta, R.; Legarda, F.

2002-01-01

1 - Description of program or function: The asymmetry factor S of Mott's differential cross section for the scattering of electrons and positrons by point nuclei without screening is calculated for any energy, atomic number and angle of scattering. 2 - Method of solution: We have summed the conditionally convergent series, F and G, appearing in the asymmetry factor using two consecutive transformations: The one of Yennie, Ravenhall and Wilson and that of Euler till we have seven times six significant figures repeated in the factor S. 3 - Restrictions on the complexity of the problem: Those appearing in the use of Mott's cross section for unscreened point nuclei

Ba2NiOsO6 : A Dirac-Mott insulator with ferromagnetism near 100 K

International Nuclear Information System (INIS)

Feng, Hai L.; Calder, Stuart

2016-01-01

In this study, the ferromagnetic semiconductor Ba 2 NiOsO 6 (T mag ~ 100 K) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m; a = 8.0428 (1) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a > 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (T mag < 180 K), the spin-gapless semiconductor Mn 2 CoAl (T mag ~ 720 K), and the ferromagnetic insulators EuO (T mag ~ 70 K) and Bi 3 Cr 3 O 11 (T mag ~ 220 K). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2 NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.

Ellen N. La Motte: the making of a nurse, writer, and activist.

Science.gov (United States)

Williams, Lea M

2015-01-01

This article examines the early career of Ellen N. La Motte (1873-1961) to trace how her training at the Johns Hopkins Training School for Nurses and years spent as a tuberculosis nurse in Baltimore shaped her perception of tuberculosis prevention and women's suffrage. Although studies of tuberculosis have frequently alluded to her work, no sustained biocritical discussion of her development as a nurse and scholar exists. Between 1902, when she graduated from nursing school, and 1914, the start of the Great War, La Motte published a textbook and dozens of articles in journals devoted to nursing and social reform and delivered many speeches at local, regional, and national meetings. In addition, as her reputation as an expert in the field of tuberculosis nursing grew, her advocacy for the vote for women increased, and she used her writing and speaking skills on behalf of the suffrage cause. This article assesses how the skills La Motte acquired during these years helped mold her into a successful and respected nurse, writer, and activist.

Uniaxial-Strain-Orientation Dependence of the Competition between Mott and Charge Ordered Phases and their Corresponding Superconductivity of β-(BDA-TTP)2I3

Science.gov (United States)

Nuruzzaman, Md.; Yokogawa, Keiichi; Yoshino, Harukazu; Yoshimoto, Haruo; Kikuchi, Koichi; Kaihatsu, Takayuki; Yamada, Jun-ichi; Murata, Keizo

2012-12-01

We studied the electronic transport properties of the charge transfer salt β-(BDA-TTP)2I3 [BDA-TTP: 2,5-bis(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene] by applying uniaxial strains along the three crystallographic axes, and obtained three corresponding temperature-pressure phase diagrams. Three phase diagrams were quite dependent on the direction of compression. Following the preceding paper by Kikuchi et al., we speculate that the insulating states are of 1/2-filled Mott insulators for the a- and b-axes compressions, and of 1/4-filled charge ordered states for the c-axis compression as well as hydrostatic pressure. The superconducting phase under uniaxial strain was realized with Tc = 5 K at 1.9 GPa along the a-axis and with Tc = 5.6 K at 1.75 GPa along the b-axis. Superconductivity was also reproduced with a Tc of 9.5 K at 1.0 GPa for the c-axis compressions in the range of 0.85 to 1.53 GPa as previously reported. We studied tentative measurement on upper critical fields, Bc2's of these superconductivities and found that the extrapolated values, Bc2(0)'s, exceeded Pauli-limit by about 2--3 times. However, at least in terms of Bc2, the difference in superconductivity associated with two different insulating states was not clear.

Chiral topological excitons in a Chern band insulator

Science.gov (United States)

Chen, Ke; Shindou, Ryuichi

2017-10-01

A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as ±1 and ±2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)2Te3 thin films are promising candidates for a platform of topological excitonics.

Disordered spinor Bose-Hubbard model

International Nuclear Information System (INIS)

LaPcki, Mateusz; Paganelli, Simone; Ahufinger, Veronica; Sanpera, Anna; Zakrzewski, Jakub

2011-01-01

We study the zero-temperature phase diagram of the disordered spin-1 Bose-Hubbard model in a two-dimensional square lattice. To this aim, we use a mean-field Gutzwiller ansatz and a probabilistic mean-field perturbation theory. The spin interaction induces two different regimes, corresponding to a ferromagnetic and antiferromagnetic order. In the ferromagnetic case, the introduction of disorder reproduces analogous features of the disordered scalar Bose-Hubbard model, consisting in the formation of a Bose glass phase between Mott insulator lobes. In the antiferromagnetic regime, the phase diagram differs more from the scalar case. Disorder in the chemical potential can lead to the disappearance of Mott insulator lobes with an odd-integer filling factor and, for sufficiently strong spin coupling, to Bose glass of singlets between even-filling Mott insulator lobes. Disorder in the spinor coupling parameter results in the appearance of a Bose glass phase only between the n and the n+1 lobes for n odd. Disorder in the scalar Hubbard interaction inhibits Mott insulator regions for occupation larger than a critical value.

Flat panel display - Impurity doping technology for flat panel displays

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Toshiharu [Advanced Technology Planning, Sumitomo Eaton Nova Corporation, SBS Tower 9F, 10-1, Yoga 4-chome, Setagaya-ku, 158-0097 Tokyo (Japan)]. E-mail: suzuki_tsh@senova.co.jp

2005-08-01

Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified.

Flat panel display - Impurity doping technology for flat panel displays

International Nuclear Information System (INIS)

Suzuki, Toshiharu

2005-01-01

Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified

Enhancement of Thermoelectric Performances in a Topological Crystal Insulator Pb0.7Sn0.3Se via Weak Perturbation of the Topological State and Chemical Potential Tuning by Chlorine Doping.

Science.gov (United States)

Lin, Chan-Chieh; Kim, Gareoung; Ginting, Dianta; Ahn, Kyunghan; Rhyee, Jong-Soo

2018-04-04

Topological insulators generally share commonalities with good thermoelectric (TE) materials because of their narrow band gaps and heavy constituent elements. Here, we propose that a topological crystalline insulator (TCI) could exhibit a high TE performance by breaking its crystalline symmetry and tuning the chemical potential by elemental doping. As a candidate material, we investigate the TE properties of the Cl-doped TCI Pb 0.7 Sn 0.3 Se. The infrared absorption spectra reveal that the band gap is increased from 0.055 eV for Pb 0.7 Sn 0.3 Se to 0.075 eV for Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 , confirming that the Cl doping can break the crystalline mirror symmetry of a TCI Pb 0.7 Sn 0.3 Se and thereby enlarge its bulk electronic band gap. The topological band inversion is confirmed by the extended X-ray absorption fine structure spectroscopy, which shows that the TCI state is weakened in a chlorine x = 0.05-doped compound. The small gap opening and partial linear band dispersion with massless and massive bands may have a high power factor (PF) for high electrical conductivity with an enhancement of the Seebeck coefficient. As a result, Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 shows a considerably enhanced ZT of 0.64 at 823 K, which is about 1200% enhancement in ZT compared with that of the undoped Pb 0.7 Sn 0.3 Se. This work demonstrates that the optimal n-type Cl doping tunes the chemical potential together with breaking the state of the TCI, suppresses the bipolar conduction at high temperatures, and thereby enables the Seebeck coefficient to increase up to 823 K, resulting in a significantly enhanced PF at high temperatures. In addition, the bipolar contribution to thermal conductivity is effectively suppressed for the Cl-doped samples of Pb 0.7 Sn 0.3 Se 1- x Cl x ( x ≥ 0.01). We propose that breaking the crystalline mirror symmetry in TCIs could be a new research direction for exploring high-performance TE materials.

James C. McGroddy Prize Talk: Superconductivity in alkali-metal doped Carbon-60

Science.gov (United States)

Hebard, Arthur

2008-03-01

Carbon sixty (C60), which was first identified in 1985 in laser desorption experiments, is unquestionably an arrestingly beautiful molecule. The high symmetry of the 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball like structure invites special attention and continues to stimulate animated speculation. The availability in 1990 of macroscopic amounts of purified C60 derived from carbon-arc produced soot allowed the growth and characterization of both bulk and thin-film samples. Crystalline C60 is a molecular solid held together by weak van der Waals forces. The fcc structure has a 74% packing fraction thus allowing ample opportunity (26% available volume) for the intercalation of foreign atoms into the interstitial spaces of the three dimensional host. This opportunity catalyzed much of the collaborative work amongst chemists, physicists and materials scientists at Bell Laboratories, and resulted in the discovery of superconductivity in alkali-metal doped C60 with transition temperatures (Tc) in the mid-30-kelvin range. In this talk I will review how the successes of this initial team effort stimulated a worldwide collaboration between experimentalists and theorists to understand the promise and potential of an entirely new class of superconductors containing only two elements, carbon and an intercalated alkali metal. Although the cuprates still hold the record for the highest Tc, there are still open scientific questions about the mechanism that gives rise to such unexpectedly high Tc's in the non-oxide carbon-based superconductors. The doped fullerenes have unusual attributes (e.g., narrow electronic bands, high disorder, anomalous energy scales, and a tantalizing proximity to a metal-insulator Mott transition), which challenge conventional thinking and at the same time provide useful insights into new directions for finding even higher Tc materials. The final chapter of the `soot to superconductivity' story has yet to be written.

Effect of the V{sub As}V{sub Ga} complex defect doping on properties of the semi-insulating GaAs

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Qiao, Hongbo; Shi, Wei; Li, Enling [Department of Applied Physics, Xi' an University of Technology, Xi' an 710054 (China)

2014-04-21

The different position V{sub As}V{sub Ga} cluster defect doping in semi-insulating (SI) GaAs has been studied by first-principles calculation based on hybrid density functional theory. Our calculated results show that EL6 level is formed due to the V{sub As}V{sub Ga} complex defect, which is very close to the experimental result. It provides the explanation of the absorption of laser with the wavelength beyond in semi-insulating GaAs. The formation energy of V{sub As}V{sub Ga} complex defect is found to decrease from surface to interior gradually. The conduction band minima and valence band maxima of GaAs (001) surface with the V{sub As}V{sub Ga} complex defect are all located at Γ point, and some defect levels are produced in the forbidden band. In contrast, the conduction band minima and valence band maxima of GaAs with the interior V{sub As}V{sub Ga} complex defect are not located at the same k-point, so it might involve the change of momentum in the electron transition process. The research will help strengthen the understanding of photoelectronic properties and effectively guide the preparation of the SI-GaAs materials.

Insulator-metal transition of fluid molecular hydrogen

International Nuclear Information System (INIS)

Ross, M.

1996-01-01

Dynamically compressed fluid hydrogen shows evidence for metallization at the relatively low pressure of 140 GPa (1.4 Mbar) while experiments on solid hydrogen made in a diamond-anvil cell have failed to detect any evidence for gap closure up to a pressure of 230 GPa (2.3 Mbar). Two possible mechanisms for metal- liclike resistivity are put forward. The first is that as a consequence of the large thermal disorder in the fluid (kT∼0.2 endash 0.3 eV) short-range molecular interactions lead to band tailing that extends the band edge into the gap, resulting in closure at a lower pressure than in the solid. The second mechanism argues that molecular dissociation creates H atoms that behave similar to n-type donors in a heavily doped semiconductor and undergo a nonmetal-metal Mott-type transition. copyright 1996 The American Physical Society

Three-dimensional fractional topological insulators in coupled Rashba layers

Science.gov (United States)

Volpez, Yanick; Loss, Daniel; Klinovaja, Jelena

2017-08-01

We propose a model of three-dimensional topological insulators consisting of weakly coupled electron- and hole-gas layers with Rashba spin-orbit interaction stacked along a given axis. We show that in the presence of strong electron-electron interactions the system realizes a fractional strong topological insulator, where the rotational symmetry and condensation energy arguments still allow us to treat the problem as quasi-one-dimensional with bosonization techniques. We also show that if Rashba and Dresselhaus spin-orbit interaction terms are equally strong, by doping the system with magnetic impurities, one can bring it into the Weyl semimetal phase.

Pairing from strong repulsion in triangular lattice Hubbard model

Science.gov (United States)

Zhang, Shang-Shun; Zhu, Wei; Batista, Cristian D.

2018-04-01

We propose a pairing mechanism between holes in the dilute limit of doped frustrated Mott insulators. Hole pairing arises from a hole-hole-magnon three-body bound state. This pairing mechanism has its roots on single-hole kinetic energy frustration, which favors antiferromagnetic (AFM) correlations around the hole. We demonstrate that the AFM polaron (hole-magnon bound state) produced by a single hole propagating on a field-induced polarized background is strong enough to bind a second hole. The effective interaction between these three-body bound states is repulsive, implying that this pairing mechanism is relevant for superconductivity.

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Soft deconfinement — critical phenomena at the Mott transition in a field theory for quarks and mesons

Science.gov (United States)

Hüfner, J.; Klevansky, S. P.; Rehberg, P.

1996-02-01

Critical phenomena associated with Mott transitions are investigated in the finite temperature SUf(3) Nambu-Jona-Lasinio model, that describes quarks u, d, s and bound mesons π, K. Critical exponents for the behavior close to the Mott temperature TM are determined for the static properties of a pion, such as mπ( T), gπqq( T), fπ( T), π, and the pion polarizabilities αC, N, as well as for the behavior of mK( T), gKqs( T) fK( T) in the strange sector. The effect of the Mott transitions on the q overlineq and ππ scattering lengths and for hadronization cross sections σ q overlineq→ππ (T) is discussed. Divergencies that occur in these quantities at TM indicate an intransparence with respect to hadronic and photonic probes, much like the phenomenon of critical opalescence. Physically, the Mott transition models the deconfinement transition expected of QCD since it corresponds to a delocalizayion of the bound states when the temperature is raised above TM.

A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

Science.gov (United States)

Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

2017-07-27

Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

Ultrafast Doublon Dynamics in Photoexcited 1 T -TaS2

Science.gov (United States)

Ligges, M.; Avigo, I.; Golež, D.; Strand, H. U. R.; Beyazit, Y.; Hanff, K.; Diekmann, F.; Stojchevska, L.; Kalläne, M.; Zhou, P.; Rossnagel, K.; Eckstein, M.; Werner, P.; Bovensiepen, U.

2018-04-01

Strongly correlated materials exhibit intriguing properties caused by intertwined microscopic interactions that are hard to disentangle in equilibrium. Employing nonequilibrium time-resolved photoemission spectroscopy on the quasi-two-dimensional transition-metal dichalcogenide 1 T -Ta S2 , we identify a spectroscopic signature of doubly occupied sites (doublons) that reflects fundamental Mott physics. Doublon-hole recombination is estimated to occur on timescales of electronic hopping ℏ/J ≈14 fs . Despite strong electron-phonon coupling, the dynamics can be explained by purely electronic effects captured by the single-band Hubbard model under the assumption of weak hole doping, in agreement with our static sample characterization. This sensitive interplay of static doping and vicinity to the metal-insulator transition suggests a way to modify doublon relaxation on the few-femtosecond timescale.

Symphonic use of quantum beams for materials science -now and future-

International Nuclear Information System (INIS)

Yamada, K; Hiraka, H

2017-01-01

Symphonic use of multiple probes for materials science is discussed through two recent studies on high- T c superconductors, and a future prospect of the symphonic use is given. For a hydrogen-doped iron-based superconductor, which shows a double-peaked superconducting dome as a function of hydrogen concentration, symphonic use of neutron, muon and synchrotron x -ray probes discovered a second antiferromagnetic (AF) phase and its contrasting feature compared to the first AF phase. A drastic change of the AF order by Ni impurities in slightly hole-doped La 2 CuO 4 , a Mott insulator, has been studied by using neutron and synchrotron x -ray probes. The symphonic use of these probes clarified the microscopic dual electronic states for both Cu and Ni in this system. (paper)

Quasi-continuous transition from a Fermi liquid to a spin liquid in κ-(ET)2Cu2(CN)3.

Science.gov (United States)

Furukawa, Tetsuya; Kobashi, Kazuhiko; Kurosaki, Yosuke; Miyagawa, Kazuya; Kanoda, Kazushi

2018-01-22

The Mott metal-insulator transition-a manifestation of Coulomb interactions among electrons-is known as a discontinuous transition. Recent theoretical studies, however, suggest that the transition is continuous if the Mott insulator carries a spin liquid with a spinon Fermi surface. Here, we demonstrate the case of a quasi-continuous Mott transition from a Fermi liquid to a spin liquid in an organic triangular-lattice system κ-(ET) 2 Cu 2 (CN) 3 . Transport experiments performed under fine pressure tuning have found that as the Mott transition is approached, the Fermi liquid coherence temperature continuously falls to the scale of kelvins, with a divergent quasi-particle decay rate on the metal side, and the charge gap continuously closes on the insulator side. A Clausius-Clapeyron analysis provides thermodynamic evidence for the extremely weak first-order nature of the transition. These results provide additional support for the existence of a spinon Fermi surface, which becomes an electron Fermi surface when charges are delocalized.

Travel funds for Stanford University to Host Mott MURI Annual Review and Oxide Workshop, August 6-8, 2013

Science.gov (United States)

2016-02-25

Travel funds for Stanford University to host Mott MURI Annual Review and Oxide Workshop, August 6-8, 2013 In conjunction with a program review for...Number of Papers published in non peer-reviewed journals: Final Report: Travel funds for Stanford University to host Mott MURI Annual Review and Oxide

Surface electrical resistivity of insulators

International Nuclear Information System (INIS)

Senn, B. C.; Liesegang, J.

1996-01-01

A method is presented here for measuring surface charge decay, and theory has been developed so as to produce determinations of resistivity in the surface region of insulator films or wafers. This method incorporates the use of a coaxial cylindrical capacitor arrangement and an electrometer interfaced to a PC. The charge transport theory given here is based on Mott-Gurney diffusion, and allows easy interpretation of the experimental data, especially for the initial phase of surface charge decay. Resistivity measurements are presented for glass, mica, perspex and polyethylene, covering a range of 10 9 to 10 18 Ωm, as an illustration of the useful range of the instrument for static and antistatic materials, particularly in film or sheet form. Values for the surface charge diffusion constants of the materials are also presented. The charge transport theory has also been extended to allow the experimental and computational theoretical comparison of surface charge decay not only over the initial phase of charge decay, but also over longer times. The theoretical predictions show excellent agreement with experiment using the values for the diffusion constants referred to above

Spin-torque generation in topological insulator based heterostructures

KAUST Repository

Fischer, Mark H.

2016-03-11

Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

Science.gov (United States)

Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

Metastability and avalanche dynamics in strongly correlated gases with long-range interactions

Science.gov (United States)

Hruby, Lorenz; Dogra, Nishant; Landini, Manuele; Donner, Tobias; Esslinger, Tilman

2018-03-01

We experimentally study the stability of a bosonic Mott insulator against the formation of a density wave induced by long-range interactions and characterize the intrinsic dynamics between these two states. The Mott insulator is created in a quantum degenerate gas of 87-Rubidium atoms, trapped in a 3D optical lattice. The gas is located inside and globally coupled to an optical cavity. This causes interactions of global range, mediated by photons dispersively scattered between a transverse lattice and the cavity. The scattering comes with an atomic density modulation, which is measured by the photon flux leaking from the cavity. We initialize the system in a Mott-insulating state and then rapidly increase the global coupling strength. We observe that the system falls into either of two distinct final states. One is characterized by a low photon flux, signaling a Mott insulator, and the other is characterized by a high photon flux, which we associate with a density wave. Ramping the global coupling slowly, we observe a hysteresis loop between the two states—a further signature of metastability. A comparison with a theoretical model confirms that the metastability originates in the competition between short- and global-range interactions. From the increasing photon flux monitored during the switching process, we find that several thousand atoms tunnel to a neighboring site on the timescale of the single-particle dynamics. We argue that a density modulation, initially forming in the compressible surface of the trapped gas, triggers an avalanche tunneling process in the Mott-insulating region.

Extension of the Mott-Gurney Law for a Bilayer Gap

Science.gov (United States)

Dubinov, A. E.; Kitayev, I. N.

2018-04-01

Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott-Gurney law for a bilayer diode).

Silicon-on-Insulator Lateral-Insulated-Gate-Bipolar-Transistor with Built-in Self-anti-ESD Diode

Directory of Open Access Journals (Sweden)

Xiaojun Cheng

2014-05-01

Full Text Available Power SOI (Silicon-On-Insulator devices have an inherent sandwich structure of MOS (Metal-Oxide-Semiconductor gate which is very easy to suffer ESD (Electro-Static Discharge overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor were carried out on the Silvaco TCAD (Technology-Computer-Aided-Design platform. According to the constrains of the technological process, the new introduction of the N+ doped region into P-well region that form the built-in self-anti-ESD diode should be done together with the doping of source under the same mask. The modifications were done by adjusting the vertical impurity profile in P-well into retrograde distribution and designing a cathode plate with a proper length to cover the forward depletion terminal and make sure that the thickness of the cathode plate is the same as that of the gate plate. The simulation results indicate that the modified device structure is compatible with the original one in process and design, the breakdown voltage margin of the former was expanded properly, and both the transient cathode voltages are clamped low enough very quickly. Therefore, the design and optimization results of the modified device structure of the built-in self-anti-ESD diode for the given SOI LIGBT meet the given requirements.

Peierls instability as the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers

Science.gov (United States)

Kang, Myung Ho; Kwon, Se Gab; Jung, Sung Chul

2018-03-01

Density functional theory (DFT) calculations are used to investigate the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers. In the coverage definition, one monolayer refers to one Na atom per surface Si atom, so this surface contains an odd number of electrons (i.e., three Si dangling-bond electrons plus two Na electrons) per 3 × 1 unit cell. Interestingly, this odd-electron surface has been ascribed to a Mott-Hubbard insulator to account for the measured insulating band structure with a gap of about 0.8 eV. Here, we instead propose a Peierls instability as the origin of the experimental band gap. The concept of Peierls instability is fundamental in one-dimensional metal systems but has not been taken into account in previous studies of this surface. Our DFT calculations demonstrate that the linear chain structure of Si dangling bonds in this surface is energetically unstable with respect to a × 2 buckling modulation, and the buckling-induced band gap of 0.79 eV explains well the measured insulating nature.

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Science.gov (United States)

Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

2017-01-01

Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal–insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices. PMID:28773222

Strong correlation effects on surfaces of topological insulators via holography

Science.gov (United States)

Seo, Yunseok; Song, Geunho; Sin, Sang-Jin

2017-07-01

We investigate the effects of strong correlation on the surface state of a topological insulator (TI). We argue that electrons in the regime of crossover from weak antilocalization to weak localization are strongly correlated, and calculate the magnetotransport coefficients of TIs using the gauge-gravity principle. Then, we examine the magnetoconductivity (MC) formula and find excellent agreement with the data of chrome-doped Bi2Te3 in the crossover regime. We also find that the cusplike peak in MC at low doping is absent, which is natural since quasiparticles disappear due to the strong correlation.

The sensing mechanism of N-doped SWCNTs toward SF6 decomposition products: A first-principle study

Science.gov (United States)

Gui, Yingang; Tang, Chao; Zhou, Qu; Xu, Lingna; Zhao, Zhongyong; Zhang, Xiaoxing

2018-05-01

In order to monitor the insulation status of SF6-insulated equipment on-line, SOF2 and SO2F2, two typical decomposition products of SF6 under electric discharge condition, are chosen as the target gases to evaluate the type and severity of discharge. In this work, single N atom doping method is adopted to improve the gas sensitivity of single wall carbon nanotubes to SOF2 and SO2F2. Single and double gas molecules adsorptions are considered to completely analyze the adsorption properties of N-doped single wall carbon nanotubes. Calculation results show that N atom doping enhances the surface activity of carbon nanotubes. When gas molecules physically adsorbed on N-doped single wall carbon nanotubes, the weak interaction between gas molecules and N-doped single wall carbon nanotubes nearly not changes the electrical property according to analysis of the density of states and molecular orbitals. While the chemisorption between gas molecules and N-doped single wall carbon nanotubes distinctly decreases the conductivity of adsorption system.

Theory of bulk-surface coupling in topological insulator films

Science.gov (United States)

Saha, Kush; Garate, Ion

2014-12-01

We present a quantitative microscopic theory of the disorder- and phonon-induced coupling between surface and bulk states in doped topological insulator films. We find a simple mathematical structure for the surface-to-bulk scattering matrix elements and confirm the importance of bulk-surface coupling in transport and photoemission experiments, assessing its dependence on temperature, carrier density, film thickness, and particle-hole asymmetry.

The Mott transition in the strong coupling perturbation theory

Science.gov (United States)

Sherman, A.

2015-01-01

Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth Δ to the Hubbard repulsion U are taken into account in the irreducible part of the Larkin equation. The obtained equation is shown to retain causality and reduces to Green's function of uncorrelated electrons in the limit U → 0. Calculations were performed for the semi-elliptical initial band. It is shown that the approximation describes the Mott transition, which occurs at Uc =√{ 3 } Δ / 2. This value coincides with that obtained in the Hubbard-III approximation. At half-filling, for 0 self-energy is nonzero at the Fermi level, which indicates that the obtained solution is not a Fermi liquid. At small deviations from half-filling the density of states shifts along the frequency axis without perceptible changes in its shape. For larger deviations the density of states is modified: it is redistributed in favor of the subband, in which the Fermi level is located, and for U >Uc the Mott gap disappears.

Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

Energy Technology Data Exchange (ETDEWEB)

Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V. [Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)

2014-08-20

A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

Importance of space-time fluctuations and non-linearities for the transport inside insulating glasses

International Nuclear Information System (INIS)

Ladieu, F.

2003-07-01

This work deals with transport in insulating glasses. In such solids, the discrete translational symmetry is lost, which means that the plane wave analysis is not a priori the right 'starting point'. As a result, the transport is more difficult to handle, and a huge amount of works have been devoted to many aspects of transport in disordered systems, especially since the seventies. Here we focus on three specific questions: (i) the heat transport in glasses submitted to micro-beams and the associated irreversible vaporization; (ii) the electronic d.c. transport, below 1 Kelvin, in Mott-Anderson insulators, i.e. in 'electron glasses' where both disorder and electron-electron interactions are relevant; (iii) the low frequency dielectric constant in 'structural glasses' (i.e. 'ordinary glasses') which, below 1 Kelvin, is both universal (i.e. independent on the chemical composition) and very different of that of crystals. For each topic, we present both original experiments and the new theoretical concepts that we have elaborated so as to understand the main experimental features. Eventually, it appears that, in any case, transport in insulating glasses is strongly dominated by quite a small part of the 'glass-applied field' ensemble and that the nonlinear response is a relevant tool to get informations on this 'sub-part' which dominates the transport in the whole system. (author)

Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

CERN Document Server

Hong, N H; Sakai, J; Iwasaki, H

2003-01-01

Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

Comparative study on the roles of anisotropic epitaxial strain and chemical doping in inducing the antiferromagnetic insulator phase in manganite films

Science.gov (United States)

Jin, Feng; Feng, Qiyuan; Guo, Zhuang; Lan, Da; Wang, Lingfei; Gao, Guanyin; Xu, Haoran; Chen, Binbin; Chen, Feng; Lu, Qingyou; Wu, Wenbin

2017-11-01

Epitaxial strain and chemical doping are two different methods that are commonly used to tune the physical properties of epitaxial perovskite oxide films, but their cooperative effects are less addressed. Here we try to tune the phase separation (PS) in (La1-xP rx) 2 /3C a1 /3Mn O3 (0 ≤x ≤0.4 , LPCMO) films via cooperatively controlling the anisotropic epitaxial strain (AES) and the Pr doping. These films are grown simultaneously on NdGa O3(110 ) ,(LaAlO3) 0.3(SrAl0.5Ta0.5O3 ) 0.7(001 ) , and NdGa O3(001 ) substrates with progressively increased in-plane AES, and probed by x-ray diffraction, magnetotransport, and magnetic force microscopy (MFM) measurements. Although it is known that for x =0 the AES can enhance the orthorhombicity of the films yielding a phase diagram with the antiferromagnetic charge-ordered insulator (AF-COI) state induced, which is quite different from the bulk one, we illustrate that the Pr doping can further drive the films towards a more robust COI state. This cooperative effect is reflected by the increasing magnetic fields needed to melt the COI phase as a function of AES and the doping level. More strikingly, by directly imaging the phase competition morphology of the LPCMO /NdGa O3(001 ) films via MFM, we find that during COI melting the PS domain structure is subject to both AES and the quenched disorder. However, in the reverse process, as the magnetic field is decreased, the COI phase reappears and the AES dominates leaving a crystalline-orientation determined self-organized microstructure. This finding suggests that the PS states and the domain configurations can be selectively controlled by the AES and/or the quenched disorder, which may shed some light on the engineering of PS domains for device fabrications.

Analysis of ion implanted doped insulators by nuclear reactions

International Nuclear Information System (INIS)

Gheith, B.M.

1992-01-01

Nuclear resonance reaction an6520750JOalysis (NRA), using a proton beam at 1350 KeV, and the complementary rutherford backscattering, using a 1.8 MeV helium beam, techniques were utilized to investigate the level of impurities and the influencs of structural defects created by an 40 Ar + beam irradation induced in single crysttalline pure, and 10 and 20 mole % Eu doped, CaF 2 targets. The energetic proton, helium and argon beams were all supplied from the Uniersity of Jordan Van De Graaff accelerator, JOVAC. The depth distribuation of intrinsic defecta altered by the radiation damage was determined, using the resonance(p,α reaction at 1350 KeV resulting, from the halogen with proton beams of incident energies above resonance. Results are compared with transport of ions in matter calculations (TRIM), using the computer code 'TRIM-89'. Results indicate that the influence of doping alters tje crystal structure by pbserving a Ca-surfaace rich layer. The Ca enrichment is explained based on the defect model of trivalent Eu occupying the divalent substitutional places of the Ca atoms. The extra positive charge is linked to a negative one available on the the neighbouring F in order to preserve charge neutrality. The Ar irradiation results on the other hand revealed that the low level Eu doping stabilizes hte crystal better than the higher doping level. Chanages in the Eu signal from uniformly even distribution to an enhancement below the surface art a depth that is correlated with the mean and straggling values of the Ar impurrity distribution, is observed. This is consistant with the calculated Ar impurity distributions in which the 250 KeV Ar irradiation results in narrow distributions gradient of defects, possibly by a radiation enhanced diffusion mechanism. Preferential sputtering of the halogen, being the lightest element in the matrix, was alos noted. Surface topographic changes due to formation of large complexes and cracks are found to distort a large volume of

Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

Directory of Open Access Journals (Sweden)

J. Wu

2015-06-01

Full Text Available Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

Enhanced pairing susceptibility in a photodoped two-orbital Hubbard model

Science.gov (United States)

Werner, Philipp; Strand, Hugo U. R.; Hoshino, Shintaro; Murakami, Yuta; Eckstein, Martin

2018-04-01

Local spin fluctuations provide the glue for orbital-singlet spin-triplet pairing in the doped Mott insulating regime of multiorbital Hubbard models. At large Hubbard repulsion U , the pairing susceptibility is nevertheless tiny because the pairing interaction cannot overcome the suppression of charge fluctuations. Using nonequilibrium dynamical mean field simulations of the two-orbital Hubbard model, we show that out of equilibrium the pairing susceptibility in this large-U regime can be strongly enhanced by creating a photoinduced population of the relevant charge states. This enhancement is supported by the long lifetime of photodoped charge carriers and a built-in cooling mechanism in multiorbital Hubbard systems.

Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

International Nuclear Information System (INIS)

Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

2003-01-01

The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

Energy Technology Data Exchange (ETDEWEB)

Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

2005-08-01

Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Science.gov (United States)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

International Nuclear Information System (INIS)

Kukushkin, V. A.

2015-01-01

The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime

Phase diagram and topological phases in the triangular lattice Kitaev-Hubbard model

Science.gov (United States)

Li, Kai; Yu, Shun-Li; Gu, Zhao-Long; Li, Jian-Xin

2016-09-01

We study the half-filled Hubbard model on a triangular lattice with spin-dependent Kitaev-like hopping. Using the variational cluster approach, we identify five phases: a metallic phase, a non-coplanar chiral magnetic order, a 120° magnetic order, a nonmagnetic insulator (NMI), and an interacting Chern insulator (CI) with a nonzero Chern number. The transition from CI to NMI is characterized by the change of the charge gap from an indirect band gap to a direct Mott gap. Based on the slave-rotor mean-field theory, the NMI phase is further suggested to be a gapless Mott insulator with a spinon Fermi surface or a fractionalized CI with nontrivial spinon topology, depending on the strength of the Kitaev-like hopping. Our work highlights the rising field in which interesting phases emerge from the interplay between band topology and Mott physics.

Electric properties of semi-insulating crystals CdTe:Cl

International Nuclear Information System (INIS)

Arkadyeva, E.N.; Matveev, O.A.

1977-01-01

Hall effect and conductivity measurement were carried out on chlorine doped semi-insulating CdTe crystals, of p and n electric type. In p type crystals the depth of the dominating level was determined (+0.7eV) as well as the concentration of associated centres (10 13 -10 14 cm -3 ). The mobility values are limited by a process of diffusion on heterogeneities

Hole-doping effects on the magnetic properties of the La4Ba2Cu2O10 ferromagnet

International Nuclear Information System (INIS)

Mizuno, F.; Masuda, H.; Hirabayashi, I.; Tanaka, S.; Mochiku, T.; Asano, H.; Izumi, F.

1992-01-01

Hole-doping effects by Ba substitution for La in La 4-x Ba 2+x Cu 2 O 10 (0 ≤ x ≤ 1) have been studied to explore the possibilities of its metal-insulator transition and superconductivity. We have not detected any symptoms for metal-insulator transition, but found certain evidence for the hole-doping effect. We observed the dilution effect of Cu 2+ spin by non-magnetic Cu 3+ on the ferromagnetic transition temperature and the reduction of effective magnetic moment. (orig.)

The Mott transition in the strong coupling perturbation theory

International Nuclear Information System (INIS)

Sherman, A.

2015-01-01

Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth Δ to the Hubbard repulsion U are taken into account in the irreducible part of the Larkin equation. The obtained equation is shown to retain causality and reduces to Green's function of uncorrelated electrons in the limit U→0. Calculations were performed for the semi-elliptical initial band. It is shown that the approximation describes the Mott transition, which occurs at U c =√(3)Δ/2. This value coincides with that obtained in the Hubbard-III approximation. At half-filling, for 0U c the Mott gap disappears

Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-02-28

We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

Science.gov (United States)

Gold, A.

1991-10-01

Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

Pressure-driven phase transitions in TiOCl and the family (Ca, Sr, Ba)Fe2As2

International Nuclear Information System (INIS)

Zhang YuZhong; Opahle, Ingo; Jeschke, Harald O; ValentI, Roser

2010-01-01

Motivated by recent experimental measurements on pressure-driven phase transitions in Mott insulators as well as the new iron pnictide superconductors, we show that first principles Car-Parrinello molecular dynamics calculations are a powerful method to describe the microscopic origin of such transitions. We present results for (i) the pressure-induced insulator to metal phase transition in the prototypical Mott insulator TiOCl as well as (ii) the pressure-induced structural and magnetic phase transitions in the family of correlated metals AFe 2 As 2 (A = Ca, Sr, Ba). Comparison of our predictions with existing experimental results yields very good agreement.

Spin-Orbital Quantum Liquid on the Honeycomb Lattice

Directory of Open Access Journals (Sweden)

Philippe Corboz

2012-11-01

Full Text Available The main characteristic of Mott insulators, as compared to band insulators, is to host low-energy spin fluctuations. In addition, Mott insulators often possess orbital degrees of freedom when crystal-field levels are partially filled. While in the majority of Mott insulators, spins and orbitals develop long-range order, the possibility for the ground state to be a quantum liquid opens new perspectives. In this paper, we provide clear evidence that the spin-orbital SU(4 symmetric Kugel-Khomskii model of Mott insulators on the honeycomb lattice is a quantum spin-orbital liquid. The absence of any form of symmetry breaking—lattice or SU(N—is supported by a combination of semiclassical and numerical approaches: flavor-wave theory, tensor network algorithm, and exact diagonalizations. In addition, all properties revealed by these methods are very accurately accounted for by a projected variational wave function based on the π-flux state of fermions on the honeycomb lattice at 1/4 filling. In that state, correlations are algebraic because of the presence of a Dirac point at the Fermi level, suggesting that the symmetric Kugel-Khomskii model on the honeycomb lattice is an algebraic quantum spin-orbital liquid. This model provides an interesting starting point to understanding the recently discovered spin-orbital-liquid behavior of Ba_{3}CuSb_{2}O_{9}. The present results also suggest the choice of optical lattices with honeycomb geometry in the search for quantum liquids in ultracold four-color fermionic atoms.

Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

Science.gov (United States)

Zhang, Jian-Min; Lian, Ruqian; Yang, Yanmin; Xu, Guigui; Zhong, Kehua; Huang, Zhigao

2017-03-01

External electric field control of topological surface states (SSs) is significant for the next generation of condensed matter research and topological quantum devices. Here, we present a first-principles study of the SSs in the magnetic topological insulator (MTI) Cr-doped Bi2Se3 under external electric field. The charge transfer, electric potential, band structure and magnetism of the pure and Cr doped Bi2Se3 film have been investigated. It is found that the competition between charge transfer and spin-orbit coupling (SOC) will lead to an electrically tunable band gap in Bi2Se3 film under external electric field. As Cr atom doped, the charge transfer of Bi2Se3 film under external electric field obviously decreases. Remarkably, the band gap of Cr doped Bi2Se3 film can be greatly engineered by the external electric field due to its special band structure. Furthermore, magnetic coupling of Cr-doped Bi2Se3 could be even mediated via the control of electric field. It is demonstrated that external electric field plays an important role on the electronic and magnetic properties of Cr-doped Bi2Se3 film. Our results may promote the development of electronic and spintronic applications of magnetic topological insulator.

Structural, electronic and magnetic properties of the series of double perovskites (Ca,Sr){sub 2−x}La{sub x}FeIrO{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Bufaiçal, L., E-mail: lbufaical@ufg.br [Instituto de Física, Universidade Federal de Goiás, 74001-970 Goiânia, GO (Brazil); Adriano, C. [Instituto de Física “Gleb Wataghin”, UNICAMP, 13083-859 Campinas, SP (Brazil); Lora-Serrano, R. [Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Duque, J.G.S. [Núcleo de Física, Universidade Federal de Sergipe, Campus Itabaiana, 49500-000 Itabaiana, SE (Brazil); Mendonça-Ferreira, L. [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, 09210-170 Santo André, SP (Brazil); Rojas-Ayala, C.; Baggio-Saitovitch, E.; Bittar, E.M. [Centro Brasileiro de Pesquisas Físicas, 22290-180 Rio de Janeiro, RJ (Brazil); Pagliuso, P.G. [Instituto de Física “Gleb Wataghin”, UNICAMP, 13083-859 Campinas, SP (Brazil)

2014-04-01

Polycrystalline samples of the series of double perovskites Sr{sub 2−x}La{sub x}FeIrO{sub 6} were synthesized. Their structural, electronic and magnetic properties were investigated by X-ray powder diffraction, Mössbauer spectroscopy, magnetic susceptibility, heat capacity and electrical resistivity experiments. The compounds crystallize in a monoclinic structure and were fitted in space group P2{sub 1}/n, with a significant degree of Fe/Ir cationic disorder. As in Ca{sub 2−x}La{sub x}FeIrO{sub 6} the Sr-based system seems to evolve from an antiferromagnetic ground state for the end members (x=0.0 and x=2.0) to a ferrimagnetic order in the intermediate regions (x∼1). Since Mössbauer spectra indicate that Fe valence remains 3+ with doping, this tendency of change in the nature of the microscopic interaction could be attributed to Ir valence changes, induced by La{sup 3+} electrical doping. Upon comparing both Ca and Sr series, Sr{sub 2−x}La{sub x}FeIrO{sub 6} is more structurally homogenous and presents higher magnetization and transition temperatures. Magnetic susceptibility measurements at high temperatures on Sr{sub 1.2}La{sub 0.8}FeIrO{sub 6} indicate a very high ferrimagnetic Curie temperature T{sub C}∼700K. For the Sr{sub 2}FeIrO{sub 6} compound, electrical resistivity experiments under applied pressure suggest that this material might be a Mott insulator. - Graphical abstract: The Weiss constant as a function of La doping for the (Ca,Sr){sub 2−x}La{sub x}FeIrO{sub 6} series, indicating changes in Fe–Ir magnetic coupling on both families. - Highlights: • The double perovskite series (Ca,Sr){sub 2−x}La{sub x}FeIrO{sub 6} were synthesized. • Changes in the Fe-Ir magnetic coupling due to La doping on both series. • Evidence of high T{sub C} on Sr{sub 1.2}La{sub 0.8}FeIrO{sub 6}. • Indication of Mott insulator behavior on Sr{sub 2}FeIrO{sub 6}.

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

KAUST Repository

Kong, Desheng

2011-10-02

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

Variable range hopping in TiO2 insulating layers for oxide electronic devices

Directory of Open Access Journals (Sweden)

Y. L. Zhao

2012-03-01

Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

Evolution of gap anisotropy with doping carriers in LixZrNCl superconductors

International Nuclear Information System (INIS)

Kasahara, Y.; Kishiume, T.; Takano, T.; Kobayashi, K.; Matsuoka, E.; Onodera, H.; Kuroki, K.; Taguchi, Y.; Iwasa, Y.

2010-01-01

We have performed specific heat measurements on the electron-doped layered Li x ZrNCl superconductors with systematically controlled x. It has been found that, at the lowest doping x ∼ 0.07, field dependence of the electronic specific heat γ(H) exhibits almost linear increase up to the upper critical field H c2 . Contrastingly, at higher doping (x > 0.10), γ(H) shows steep increase well below H c2 . These results indicate that the anisotropy of the superconducting gap evolves with increasing carrier density, in accord with a prediction by very recent theoretical calculation that takes into account Coulomb interactions in a doped band insulator with honeycomb lattice.

An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a modulation-doped channel

International Nuclear Information System (INIS)

DelAlamo, J.A.

1989-01-01

A heterostructure metal-insulator-semiconductor field-effect transistor (MISFET) with a modulation-doped channel is proposed. In this device, a very thin undoped subchannel is located between the undoped wide-bandgap insulator and a thin heavily doped channel. In the depletion mode of operation, electron transport takes place along the heavily doped channel. When the device enters the accumulation mode of operation, electrons pile up against the heterointerface in the high-mobility undoped subchannel. This should result in markedly improved transport characteristics at the onset of accumulation. The concept is demonstrated in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As system on InP

Effect of Nano Al2O3 Doping on Thermal Aging Properties of Oil-Paper Insulation

Directory of Open Access Journals (Sweden)

Ningchuan Liang

2018-05-01

Full Text Available The thermal aging property of oil-paper insulation is a key factor affecting the service life of transformers. In this study, nano-Al2O3 was added to insulating paper to improve its anti-thermal aging property and delay the aging rate of the insulating oil. The composite paper containing 2% nano-Al2O3 had the highest tensile strength and therefore was selected for the thermal aging test. The composite and normal papers were treated with an accelerated thermal aging experiment at the temperature of 130 °C for 56 days. The variations of the degree of polymerization (DP and tensile strength of the insulating papers with aging time were obtained. The characteristics of the insulating oil, including color, acid content, breakdown voltage, and dielectric loss were analyzed. The results revealed that compared with a plain paper, the composite paper maintained a higher DP, and its tensile strength decreased more slowly during the aging process. The oil-impregnated composite paper presented a lighter-colored oil, less viscosity changes, and a considerably lower quantity of thermal aging products. In addition, nano-Al2O3 can effectively adsorb copper compounds and keep part of the acid products and water away from the thermal aging process. This characteristic restrained the catalysis of copper compounds and H+ in the thermal aging reaction and reduced the thermal aging speed of both the insulating paper and the insulating oil.

Epitaxial stabilization of ultra thin films of electron doped manganites

Energy Technology Data Exchange (ETDEWEB)

Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-05-19

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

Temperature dependence of non-Debye disorder in doped manganites

International Nuclear Information System (INIS)

Meneghini, C.; Cimino, R.; Pascarelli, S.; Mobilio, S.; Raghu, C.; Sarma, D.D.

1997-01-01

Ca-doped manganite La 1-x Ca x MnO 3 samples with x=0.2 and 0.4 were investigated by extended x-ray absorption fine structure (EXAFS) as a function of temperature and preparation method. The samples exhibit characteristic resistivity change across the metal-insulator (MI) transition temperature whose shape and position depend on Ca-doping concentration and sample thermal treatment. EXAFS results evidenced an increase of nonthermal disorder at the MI transition temperature which is significantly correlated with the resistivity behavior. copyright 1997 The American Physical Society

Phase diagram of two-component bosons on an optical lattice

International Nuclear Information System (INIS)

Altman, Ehud; Hofstetter, Walter; Demler, Eugene; Lukin, Mikhail D

2003-01-01

We present a theoretical analysis of the phase diagram of two-component bosons on an optical lattice. A new formalism is developed which treats the effective spin interactions in the Mott and superfluid phases on the same footing. Using this new approach we chart the phase boundaries of the broken spin symmetry states up to the Mott to superfluid transition and beyond. Near the transition point, the magnitude of spin exchange can be very large, which facilitates the experimental realization of spin-ordered states. We find that spin and quantum fluctuations have a dramatic effect on the transition, making it first order in extended regions of the phase diagram. When each species is at integer filling, an additional phase transition may occur, from a spin-ordered insulator to a Mott insulator with no broken symmetries. We determine the phase boundaries in this regime and show that this is essentially a Mott transition in the spin sector

Enhanced thermoelectric power in ultrathin topological insulators with magnetic doping

KAUST Repository

Tahir, M.

2014-09-07

We derive analytical expressions for the magnetic moment and orbital magnetization as well as for the corresponding thermal conductivity and thermoelectric power of a topological insulator film. We demonstrate enhancement of the thermoelectric transport for decreasing film thickness and for application of an exchange field due to the tunable band gap. Combining hybridization and exchange field is particularly suitable for heat to electric energy conversion and thermoelectric cooling.

Enhanced thermoelectric power in ultrathin topological insulators with magnetic doping

KAUST Repository

Tahir, M.; Manchon, Aurelien; Schwingenschlö gl, Udo

2014-01-01

We derive analytical expressions for the magnetic moment and orbital magnetization as well as for the corresponding thermal conductivity and thermoelectric power of a topological insulator film. We demonstrate enhancement of the thermoelectric transport for decreasing film thickness and for application of an exchange field due to the tunable band gap. Combining hybridization and exchange field is particularly suitable for heat to electric energy conversion and thermoelectric cooling.

High sensitivity thermal sensors on insulating diamond

Energy Technology Data Exchange (ETDEWEB)

Job, R. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Denisenko, A.V. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Zaitsev, A.M. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Melnikov, A.A. [Belarussian State Univ., Minsk (Belarus). HEII and FD; Werner, M. [VDI/VDE-IT, Teltow (Germany); Fahrner, W.R. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices

1996-12-15

Diamond is a promising material to develop sensors for applications in harsh environments. To increase the sensitivity of diamond temperature sensors the effect of thermionic hole emission (TE) over an energetic barrier formed in the interface between highly boron-doped p-type and intrinsic insulating diamond areas has been suggested. To study the TE of holes a p-i-p diode has been fabricated and analyzed by electrical measurements in the temperature range between 300 K and 700 K. The experimental results have been compared with numerical simulations of its electrical characteristics. Based on a model of the thermionic emission of carriers into an insulator it has been suggested that the temperature sensitivity of the p-i-p diode on diamond is strongly affected by the re-emission of holes from a group of donor-like traps located at a level of 0.7-1.0 eV above the valence band. The mechanism of thermal activation of the current includes a spatial redistribution of the potential, which results in the TE regime from a decrease of the immobilized charge of the ionized traps within the i-zone of the diode and the correspondent lowering of the forward biased barrier. The characteristics of the p-i-p diode were studied with regard to temperature sensor applications. The temperature coefficient of resistance (TCR=-0.05 K{sup -1}) for temperatures above 600 K is about four times larger than the maximal attainable TCR for conventional boron-doped diamond resistors. (orig.)

Electrical resistivity study of insulators

International Nuclear Information System (INIS)

Liesegang, J.; Senn, B.C.; Holcombe, S.R.; Pigram, P.J.

1998-01-01

Full text: Conventional methods of electrical resistivity measurement of dielectric materials involve the application of electrodes to a sample whereby a potential is applied and a current through the material is measured. Although great care and ingenuity has often been applied to this technique, the recorded values of electrical resistivity (p), especially for insulator materials, show great disparity. In earlier work by the authors, a method for determining surface charge decay [Q(t)], using a coaxial cylindrical capacitor arrangement interfaced to a personal computer, was adapted to allow the relatively straightforward measurement of electrical resistivity in the surface region of charged insulator materials. This method was used to develop an ionic charge transport theory, based on Mott-Gurney diffusion to allow a greater understanding into charge transport behaviour. This theory was extended using numerical analysis to produce a two dimensional (2-D) computational model to allow the direct comparison between experimental and theoretical charge decay data. The work also provided a means for the accurate determination of the diffusion coefficient (D) and the layer of thickness of surface charge (Δz) on the sample. The work outlined here involves an extension of the theoretical approach previously taken, using a computational model based more closely on the 3-D experimental set-up, to reinforce the level of confidence in the results achieved for the simpler 2-D treatment. Initially, a 3-D rectangular box arrangement similar to the experimental set-up was modelled and a theoretical and experimental comparison of voltage decay results made. This model was then transferred into cylindrical coordinates to allow it to be almost identical to the experiment and again a comparison made. In addition, theoretical analysis of the coupled non-linear partial differential equations governing the charge dissipation process has led to a simplification involving directly, the

Mott mechanism and the hadronic to quark matter phase transition

International Nuclear Information System (INIS)

Blaschke, D.; Reinholz, F.

1984-01-01

A unified description of both the hadronic and quark matter can be found using the technique of thermodynamic Green functions. The destruction of bound states (quark deconfinement) is related microscopically to the Mott mechanism which leads to a different behaviour of free particle energies and bound state energies if the particle density is increasing. A simple model calculation is performed to obtain a rough estimate for the critical temperature of the hadronic-quark matter phase transition

Quasistatic antiferromagnetism in the quantum wells of SmTiO3/SrTiO3 heterostructures

Science.gov (United States)

Need, Ryan F.; Marshall, Patrick B.; Kenney, Eric; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Kirby, Brian J.; Stemmer, Susanne; Graf, Michael J.; Wilson, Stephen D.

2018-03-01

High carrier density quantum wells embedded within a Mott insulating matrix present a rich arena for exploring unconventional electronic phase behavior ranging from non-Fermi-liquid transport and signatures of quantum criticality to pseudogap formation. Probing the proposed connection between unconventional magnetotransport and incipient electronic order within these quantum wells has however remained an enduring challenge due to the ultra-thin layer thicknesses required. Here we address this challenge by exploring the magnetic properties of high-density SrTiO3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO3 via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per planar unit cell acquired by the nominal d0 band insulator SrTiO3 when embedded within a d1 Mott SmTiO3 matrix exhibits slow magnetic fluctuations that begin to freeze into a quasistatic spin state below a critical temperature T*. The appearance of this quasistatic well magnetism coincides with the previously reported opening of a pseudogap in the tunneling spectra of high carrier density wells inside this film architecture. Our data suggest a common origin of the pseudogap phase behavior in this quantum critical oxide heterostructure with those observed in bulk Mott materials close to an antiferromagnetic instability.

Spin-polarized inelastic tunneling through insulating barriers.

Science.gov (United States)

Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

2009-05-01

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

Momentum Dependence of Charge Excitations in YBa2Cu3O7-δ and Nd2-xCexCuO4

Science.gov (United States)

Ishii, Kenji

2006-03-01

Resonant inelastic x-ray scattering (RIXS) studies at Cu K-edge on high-Tc superconducting cuprates, YBa2Cu3O7-δ and Nd2-xCexCuO4 are presented. The superconductivity occurs in the vicinity of the Mott insulating state and it is important to clarify the nature of the Mott gap and its doping dependence. Because RIXS has an advantage that we can measure charge excitation in a wide energy-momentum space, it gives a unique opportunity to study the electronic structure of materials. We apply this technique to high-Tc superconducting cuprates. In particular the electronic structure of strongly correlated metals is in the focus of our RIXS study. The experiments were performed at BL11XU of SPring-8, Japan, where a specially designed spectrometer for inelastic x-ray scattering is installed. In optimally doped YBa2Cu3O7-δ, anisotropic spectra are observed in the ab plane of a twin-free crystal. The Mott gap excitation from the one-dimensional CuO chain is enhanced at 2 eV near the zone boundary of the chain direction, while the excitation from the CuO2 plane is broad at 1.5-4 eV and almost independent of momentum. Theoretical calculation based on the one-dimensional and two-dimensional Hubbard model reproduces the observed features in the RIXS spectra when smaller values of the on-site Coulomb energy of the chain than that of the plane are assumed. This means that the charge transfer gap of the chain is smaller than that of the plane. On the other hand, both interband excitation across the Mott gap and intraband excitation in the upper Hubbard band are observed in the electron-doped Nd2-xCexCuO4. The intensity of the interband excitation is concentrated at ˜ 2 eV near the zone boundary while a dispersion relation with a momentum-dependent width emerges in the intraband excitation. The author would like to acknowledge to his collaborators, K. Tsutsui, Y. Endoh, T. Tohyama, K. Kuzushita, T. Inami, K. Ohwada, M. Hoesch, M. Tsubota, Y. Murakami, J. Mizuki, S. Maekawa, T

Electronic conduction in doped multiferroic BiFeO3

Science.gov (United States)

Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

2009-03-01

Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

Magnetic correlations in a classic Mott system

International Nuclear Information System (INIS)

Bao, W.; Broholm, C.; Aeppli, G.; Carter, S.A.; Dai, D.; Frost, C.D.

1997-07-01

The metal-insulator transition in V 2 O 3 causes a fundamental change in its magnetism. While the antiferromagnetic insulator (AFI) is a Heisenberg localized spin system, the antiferromagnetism in the strongly correlated metal is determined by a Fermi surface instability. Paramagnetic fluctuations in the metal and insulator represent similar spatial spin correlations, but are unrelated to the long range order in the AFI. The phase transition to the AFI induces an abrupt switching of magnetic correlations to a different magnetic wave vector. The AFI transition, therefore, is not a conventional spin order-disorder transition. Instead it is accounted for by an ordering in the occupation of the two degenerate d-orbitals at the Fermi level

Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films.

Science.gov (United States)

Röhr, Jason A; Moia, Davide; Haque, Saif A; Kirchartz, Thomas; Nelson, Jenny

2018-03-14

Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films

Science.gov (United States)

Röhr, Jason A.; Moia, Davide; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-03-01

Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

International Nuclear Information System (INIS)

Simon, Roland B.; Anaya, Julian; Kuball, Martin

2014-01-01

The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates

Molecular dynamics simulations of the effect of shape and size of SiO2 nanoparticle dopants on insulation paper cellulose

Directory of Open Access Journals (Sweden)

Chao Tang

2016-12-01

Full Text Available The effect of silica nanoparticle (Nano-SiO2 dopants on insulation paper cellulose, and the interaction between them, was investigated using molecular dynamics simulations. The mechanical properties, interactions, and cellulose-Nano-SiO2 compatibility of composite models of cellulose doped with Nano-SiO2 were studied. An increase in Nano-SiO2 size leads to a decrease in the mechanical properties, and a decrease in the anti-deformation ability of the composite model. The binding energies and bond energies per surface area of the composite models indicate that the bonding interaction between spherical Nano-SiO2 and cellulose is the strongest among the four different Nano-SiO2 shapes that are investigated. The solubilities of the four composite models decrease with increasing Nano-SiO2 size, and the difference between the solubility of pure cellulose and those of the composite models increases with increasing Nano-SiO2 size. Good doping effects with the highest cellulose-Nano-SiO2 compatibility are achieved for the cellulose model doped with spherical Nano-SiO2 of 10 Å in diameter. These findings provide a method for modifying the mechanical properties of cellulose by doping, perhaps for improving insulation dielectrics.

High-quality LaVO3 films as solar energy conversion material

International Nuclear Information System (INIS)

Zhang, Hai-Tian; Brahlek, Matthew; Ji, Xiaoyu; Lei, Shiming; Lapano, Jason

2017-01-01

Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO 3 films were grown with defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO 3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO 3 films compared to their nonstoichiometric counterparts. Furthermore, this work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.

A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

International Nuclear Information System (INIS)

Patil, Ganesh C; Qureshi, S

2011-01-01

In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

Excitonic Order and Superconductivity in the Two-Orbital Hubbard Model: Variational Cluster Approach

Science.gov (United States)

Fujiuchi, Ryo; Sugimoto, Koudai; Ohta, Yukinori

2018-06-01

Using the variational cluster approach based on the self-energy functional theory, we study the possible occurrence of excitonic order and superconductivity in the two-orbital Hubbard model with intra- and inter-orbital Coulomb interactions. It is known that an antiferromagnetic Mott insulator state appears in the regime of strong intra-orbital interaction, a band insulator state appears in the regime of strong inter-orbital interaction, and an excitonic insulator state appears between them. In addition to these states, we find that the s±-wave superconducting state appears in the small-correlation regime, and the dx2 - y2-wave superconducting state appears on the boundary of the antiferromagnetic Mott insulator state. We calculate the single-particle spectral function of the model and compare the band gap formation due to the superconducting and excitonic orders.

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-01-01

We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Chunfeng Lan

2018-02-01

Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

Science.gov (United States)

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti4+) Doping

Science.gov (United States)

Wu, Yanfei; Fan, Lele; Liu, Qinghua; Chen, Shi; Huang, Weifeng; Chen, Feihu; Liao, Guangming; Zou, Chongwen; Wu, Ziyu

2015-01-01

The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti4+-doped VO2 (TixV1-xO2) system. It was observed that the TC of TixV1-xO2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in TixV1-xO2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials. PMID:25950809

Fermi-surface reconstruction and the origin of high-temperature superconductivity

International Nuclear Information System (INIS)

Norman, M.R.

2010-01-01

In crystalline lattices, the conduction electrons form waves, known as Bloch states, characterized by a momentum vector k. The defining characteristic of metals is the surface in momentum space that separates occupied from unoccupied states. This 'Fermi' surface may seem like an abstract concept, but it can be measured and its shape can have profound consequences for the thermal, electronic, and magnetic properties of a material. In the presence of an external magnetic field B, electrons in a metal spiral around the field direction, and within a semiclassical momentum-space picture, orbit around the Fermi surface. Physical properties, such as the magnetization, involve a sum over these orbits, with extremal orbits on the Fermi surface, i.e., orbits with minimal or maximal area, dominating the sum (Fig. 1(a)). Upon quantization, the resulting electron energy spectrum consists of Landau levels separated by the cyclotron energy, which is proportional to the magnetic field. As the magnetic field causes subsequent Landau levels to cross through the Fermi energy, physical quantities, such as the magnetization or resistivity, oscillate in response. It turns out that the period of these oscillations, when plotted as a function of 1/B, is proportional to the area of the extremal orbit in a plane perpendicular to the applied field (Fig. 1(b)). The power of the quantum oscillation technique is obvious: By changing the field direction, one can map out the Fermi surface, much like a blind man feeling an elephant. The nature and topology of the Fermi surface in high-T c cuprates has been debated for many years. Soon after the materials were discovered by Bednorz and Mueller, it was realized that superconductivity was obtained by doping carriers into a parent insulating state. This insulating state appears to be due to strong electronic correlations, and is known as a Mott insulator. In the case of cuprates, the electronic interactions force the electrons on the copper ion

Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

KAUST Repository

Asayesh-Ardakani, Hasti

2015-10-12

There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO 2 Nanowires

KAUST Repository

Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M.; Zhu, Yihan; Phillips, Patrick J.; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke Bin; Klie, Robert F.; Banerjee, Sarbajit; Odegard, Gregory M.; Shahbazian-Yassar, Reza

2015-01-01

There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WVO nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122¯) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

Neutron-transmutation-doped germanium bolometers

International Nuclear Information System (INIS)

Palaio, N.P.; Rodder, M.; Haller, E.E.; Kreysa, E.

1983-02-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 16 and 1.88 x 10 18 cm - 2 . After thermal annealing the resistivity was measured down to low temperatures ( 0 exp(δ/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers

On the interplay of Jahn-Teller physics and Mott physics in cuprates

International Nuclear Information System (INIS)

Kamimura, H; Ushio, H

2008-01-01

The extended two-story house model which is now called the Kamimura-Suwa (K-S) model has clarified how the interplay of Mott physics and Jahn-Teller physics plays an important role in determining the superconducting as well as metallic state of underdoped cuprates. In this paper it is first pointed out for underdoped cuprates that Mott physics leads to the existence of local antiferromagnetic order constructed from the localized spins while that the anti-Jahn-Teller effect as a central issue of Jahn-Teller physics leads to the existence of two kinds of orbitals parallel and perpendicular to a CuO 2 plane whose states have nearly the same energy. As a result of the interplay of both physics the K-S model has shown that the exchange interactions between the spins of a localized hole and of a carrier hole play an important role in producing the coexistence of superconductivity and antiferromagnetism in underdoped cuprates. The appearance of d-wave superconductivity even in the phonon-involved mechanism is also shown to be due to the interplay of Jahn-Teller physics and Mott Physics. Brief review of these facts as well as the K-S model is given in this paper. More outstanding result in this paper is that the origin of pseudogap in the deeply underdoped regime has been clarified. In this paper it is shown theoretically for the first time that the so-called T* pseudogap observed in ARPES, STM and tunneling experiments below T c in underdoped cuprates corresponds to the real transition of photo-excited electrons from the occupied states in the originally conduction band below the superconducting gap to a free-electron state above the vacuum level. Thus we conclude that the T* pseudogap in the underdoped cuprates which increases with decreasing the hole concentration is not 'pseudo', but a real gap which exists even below T c

Dye sensitization of antimony-doped CdS photoelectrochemical solar cell

Energy Technology Data Exchange (ETDEWEB)

El Zayat, M.Y.; Saed, A.O.; El-Dessouki, M.S. [Department of Physics, Faculty of Science, Cairo University, Giza (Egypt)

2002-01-31

Sb-doped CdS single crystal was used as a photoanode to fabricate a photoelectrochemical solar (PECS) cell. The three organic dyes; eosin, thymol blue and rhodamin 6G were used as sensitizers in (PECS) cell. In the absence of the dye, the results showed that with Sb-doped CdS single crystal electrode, a higher power conversion efficiency 9.27% has been achieved compared to 5.7-7.4% for pure crystal. Application of the dye in PECS cell increases the efficiency to about 13%. The efficiency reaches its maximum value when the dye concentration is (2.5x10{sup -5})M, sufficient to cover the surface of the semiconductor electrode with a continuous monolayer of the dye. Exceeding this value resulted in a gradual decrease of the efficiency from its maximum value. Mott-Schottky plots gave a doping density of 3.14x10{sup 17}cm{sup -3} and a space charge width of 4.95x10{sup -6}cm for the sample used. A flat-band potential equal to -0.84V, independent of both frequency and pH, was also predicted. Cyclic voltammetry (c.v.) measurements showed an anodic current peak at 0.4V vs. SCE. The disappearance of this peak after excess addition of the reducing agent Na{sub 2}S, indicates that this peak is due to the PEC corrosion of the semiconductor electrode.

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Armstrong, A.; Poblenz, C.; Green, D.S.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

2006-01-01

The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T s of 650 and 720 deg. C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T s =720 deg. C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T s . In light of a T s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2016-03-24

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-03-15

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

Existence of Mott-Schwinger interaction proved by means of p-/sup 12/C elastic scattering. [450 to 600 keV

Energy Technology Data Exchange (ETDEWEB)

Krause, H H; Arnold, W; Berg, H; Ulbricht, J; Clausnitzer, G [Giessen Univ. (Germany, F.R.). Inst. fuer Kernphysik

1979-01-01

The aim of this work was the unambiguous proof of the existence of the Mott-Schwinger interaction. The analyzing power of the p-/sup 12/C elastic scattering was measured in the energy range from 450 to 600 keV for scattering angles theta/sub Lab/ = 90/sup 0/ and 120/sup 0/ with an overall accuracy up to ..delta..A = 1 x /sup -4/. The data can be described very well with the R-matrix formalism including Mott-Schwinger interaction. Omitting this interaction results in large discrepancies.

Silver antimony Ohmic contacts to moderately doped n-type germanium

Energy Technology Data Exchange (ETDEWEB)

Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2014-04-21

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Science.gov (United States)

Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

2018-03-01

Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

Investigation on magnetic, electrical and thermoelectric power of Bi-substituted La{sub 0.8}Ca{sub 0.2}MnO{sub 3} manganites

Energy Technology Data Exchange (ETDEWEB)

Manjunatha, S.O. [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Rao, Ashok, E-mail: ashokanu_rao@rediffmail.com [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Awana, V.P.S. [Superconductivity and Cryogenics Division, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Marg, New Delhi (India); Okram, G.S. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, MP (India)

2015-11-15

In the present work, the structural, magnetic, magneto-transport and thermoelectric properties of polycrystalline compounds of La{sub 0.8−x}Bi{sub x}Ca{sub 0.2}MnO{sub 3}(0≤x≤0.1) compounds are reported. Structure refinement using Rietveld method confirms that the samples are single phased and crystallize in rhombohedral structure with R-3C space group. Magnetic studies reveal that the pristine sample exhibits T{sub C} at 221 K and it shift towards lower temperature with Bi doping. Deviation of the temperature dependent of inverse susceptibility curves from the Curie–Weiss law confirms the existence of Griffiths-like phase. All the samples exhibit metal to insulator transition at temperature T{sub MI}, which is found to decrease with increase in Bi doping which is consistent with the magnetic studies. Magneto-resistance MR% data shows that its peak value increases with Bi-doping. The analysis of electrical resistivity data in the metallic region (Tinsulating region (T>T{sub MI}) is well described using Small polaron hopping (SPH) and Mott's variable range hopping (VRH) models. Analysis of thermoelectric power data in the high temperature region suggests that the SPH mechanism is operative in this regime, while the analysis of low temperature data reveals that the electron–magnon scattering is dominant in the region. - Highlights: • Bi-doped compounds follow small polaron hopping model in high temperature range. • MR(%) increases with Bi-doping. • High temperature TEP data follows SPH model. • At low temperatures, electron–magnon scattering play role in thermo-electric transport.

A Thermally Insulating Textile Inspired by Polar Bear Hair.

Science.gov (United States)

Cui, Ying; Gong, Huaxin; Wang, Yujie; Li, Dewen; Bai, Hao

2018-04-01

Animals living in the extremely cold environment, such as polar bears, have shown amazing capability to keep warm, benefiting from their hollow hairs. Mimicking such a strategy in synthetic fibers would stimulate smart textiles for efficient personal thermal management, which plays an important role in preventing heat loss and improving efficiency in house warming energy consumption. Here, a "freeze-spinning" technique is used to realize continuous and large-scale fabrication of fibers with aligned porous structure, mimicking polar bear hairs, which is difficult to achieve by other methods. A textile woven with such biomimetic fibers shows an excellent thermal insulation property as well as good breathability and wearability. In addition to passively insulating heat loss, the textile can also function as a wearable heater, when doped with electroheating materials such as carbon nanotubes, to induce fast thermal response and uniform electroheating while maintaining its soft and porous nature for comfortable wearing. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of structural and electronic transport properties of Ce-doped ...

Indian Academy of Sciences (India)

Abstract. The structural and electronic transport properties of La1−x Cex MnO3 (x =0.0–1.0) have been studied. All the samples exhibit orthorhombic crystal symmetry and the unit cell volume de- creases with Ce doping. They also make a metal–insulator transition (MIT) and transition temper- ature increases with increase in ...

A first principle simulation of competitive adsorption of SF6 decomposition components on nitrogen-doped anatase TiO2 (101) surface

Science.gov (United States)

Dong, Xingchen; Zhang, Xiaoxing; Cui, Hao; Zhang, Jun

2017-11-01

Gas insulated switchgear has been widely used in modern electric systems due to its significantly excellent performances such as compact structure and low land occupation as well as the security stability. However, inside defects caused during manufacture process can lead to partial discharge which might develop into serious insulation failure. Online monitoring method on basis of gas sensors is considered a promising way of detecting partial discharge for alarm ahead of time. Research has found that TiO2 nanotubes sensors show good response to SO2, SOF2, SO2F2, the decomposition components as a result of partial discharge. In order to investigate the gas-sensing mechanism of nitrogen-doped TiO2 prepared via plasma treatment methods to SO2, SOF2, and SO2F2, the adsorption structures of both three gas molecules and anatase TiO2 (101) surface were built, and DFT calculations were then carried out for calculation and analysis of adsorption parameters. Adsorption property comparison of anatase TiO2 (101) surface after nitrogen doping with Au doping and without doping shows that nitrogen doping can obviously enhance the adsorption energy for SO2 and SOF2 adsorption and no charge transfer for SO2F2 adsorption, further explaining the adsorption mechanism and doping influence of different doping elements.

Controllable magnetic doping of the surface state of a topological insulator

DEFF Research Database (Denmark)

Schlenk, T.; Bianchi, M.; Koleini, Mohammad

2013-01-01

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by ther...

On the correct interpretation of the low voltage regime in intrinsic single-carrier devices.

Science.gov (United States)

Röhr, Jason A; Kirchartz, Thomas; Nelson, Jenny

2017-05-24

We discuss the approach of determining the charge-carrier density of a single-carrier device by combining Ohm's law and the Mott-Gurney law. We show that this approach is seldom valid, due to the fact that whenever Ohm's law is applicable the Mott-Gurney law is usually not, and vice versa. We do this using a numerical drift-diffusion solver to calculate the current density-voltage curves and the charge-carrier density, with increasing doping concentration. As this doping concentration is increased to very large values, using Ohm's law becomes a sensible way of measuring the product of mobility and doping density in the sample. However, in the high-doping limit, the current is no longer governed by space-charge and it will no longer be possible to determine the charge-carrier mobility using the Mott-Gurney law. This leaves the value for the mobility as an unknown in the mobility-doping density product in Ohm's law. We also show that, when the charge-carrier mobility for an intrinsic semiconductor is known in advance, the carrier density is underestimated up to many orders of magnitude if Ohm's law is used. We finally seek to establish a window of conditions where the two methods can be combined to yield reasonable results.

Neutron investigation of Ru-doped Nd1/2Ca1/2MnO3. Comparison with Cr-doped Nd1/2Ca1/2MnO3

International Nuclear Information System (INIS)

Moritomo, Yutaka; Nonobe, Toshihiko; Machida, Akihiko; Ohoyama, Kenji

2002-01-01

Lattice and magnetic properties are investigated for 3% Ru- and Cr-doped Nd 1/2 Ca 1/2 MnO 3 . The parent Nd 1/2 Ca 1/2 MnO 3 is a charge-ordered insulator (T CO =250K). With decreasing temperature below ≅210K, these compounds are separated into two perovskite phases, that is, the long-c and short-c phases. The long-c region shows a ferromagnetic transition at T C ≅210K for the Ru-doped compound and ≅130K for the Cr-doped compound, while the short-c region shows antiferromagnetic transition at T N ≅150K for Ru and ≅110K for Cr. We discuss the origin of the enhanced T C for the Ru-doped compound in terms of the effective one-electron bandwidth W of the e g -band. (author)

Transport and magnetic properties of Ce-doped LaMnO3 thin films

International Nuclear Information System (INIS)

Yanagida, Takeshi; Kanki, Teruo; Vilquin, Bertrand; Tanaka, Hidekazu; Kawai, Tomoji

2005-01-01

Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

Energy Technology Data Exchange (ETDEWEB)

Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N. [Belarusian State University (Belarus); Zabrodskii, A. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-06-15

The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy W{sub p} and effective acceptor bandwidth W{sub a} are obtained. In calculating W{sub a}, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that W{sub p} is lower than W{sub a}, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature T{sub j} of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3T{sub j}/2 on their concentration N and degree of compensation K (the ratio between the

Emergent Chiral Spin State in the Mott Phase of a Bosonic Kane-Mele-Hubbard Model

Science.gov (United States)

Plekhanov, Kirill; Vasić, Ivana; Petrescu, Alexandru; Nirwan, Rajbir; Roux, Guillaume; Hofstetter, Walter; Le Hur, Karyn

2018-04-01

Recently, the frustrated X Y model for spins 1 /2 on the honeycomb lattice has attracted a lot of attention in relation with the possibility to realize a chiral spin liquid state. This model is relevant to the physics of some quantum magnets. Using the flexibility of ultracold atom setups, we propose an alternative way to realize this model through the Mott regime of the bosonic Kane-Mele-Hubbard model. The phase diagram of this model is derived using bosonic dynamical mean-field theory. Focusing on the Mott phase, we investigate its magnetic properties as a function of frustration. We do find an emergent chiral spin state in the intermediate frustration regime. Using exact diagonalization we study more closely the physics of the effective frustrated X Y model and the properties of the chiral spin state. This gapped phase displays a chiral order, breaking time-reversal and parity symmetry, but is not topologically ordered (the Chern number is zero).

Conductivity in alkali doped CoO-B2O3 glasses

International Nuclear Information System (INIS)

Nagaraja, N; Sankarappa, T; Santoshkumar; Sadashivaiah, P J; Yenkayya

2009-01-01

Two series of cobalt-borate glasses doped with Li 2 O and K 2 O in single and mixed proportions have been synthesized by melt quenching method and investigated for ac conductivity in the frequency range of 50Hz to 5MHz and temperature range of 310K to 610K. From the measured total conductivity, the pure ac component and its frequency exponent, s were determined. In the single alkali doped glasses, for all the frequencies, the conductivity increased with increase of Li 2 O up to 0.4 mole fractions and decreased for further increase of Li 2 O. The temperature dependence of conductivity has been analyzed using Mott's small polaron hopping model and activation energy for ac conduction has been determined. Based on conductivity and activation behaviors, in single alkali glasses, a change over of conduction mechanism predominantly from ionic to electronic has been predicted. In mixed alkali doped glasses, the conductivity passed through minimum and activation energy passed through maximum for second alkali (K 2 O) content of 0.2 mole fractions. This result revealed the mixed alkali effect to be occurring at 0.2 mole fractions of K 2 O. The frequency exponent, s, was compared with theoretical models such as Quantum Mechanical Tunneling and Correlated Barrier Hopping models and found them to be inadequate to explain the experimental observations. Time-temperature superposition principle has been verified in both the sets of glasses.

Magnon spin Hall magnetoresistance of a gapped quantum paramagnet

NARCIS (Netherlands)

Ulloa, Camilo; Duine, R.A.

2018-01-01

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling

Micro structural and magnetic characterization of Gd doped SnO2 nanoparticles

International Nuclear Information System (INIS)

Adhikari, R.; Das, A.K.; Karmakar, D.; Chandrasekhar Rao, T.V.; Ghatak, J.

2008-01-01

Gd doped SnO 2 nanoparticles were prepared by a chemical co-precipitation method. The prepared samples were calcined at 600 deg C. The annealed samples were characterized using XRD, TEM and SQUID magnetometry. The structural characterizations showed formation of particles in the nanometer regime. The M(T) and M(H) studies indicated an antiferromagnetic (AFM) interaction in 3 and 6% (at. wt.) Gd doped SnO 2 nanoparticles. The M(H) plot of both samples indicate a super paramagnetic (SPM) behavior at 7K as against the perfect AFM nature at 300K. The samples exhibit an insulating DMS nature, but we do not observe any ferromagnetism as was observed for other Gd doped systems like GaN and ZnO. (author)

Dopant structural distortions in high-temperature superconductors: an active or a passive role?

International Nuclear Information System (INIS)

Haskel, D.; Stern, E.A.; Dogan, F.; Moodenbaugh, A.R.

2001-01-01

The parent compounds of high-temperature superconductors, such as YBa 2 Cu 3 O 6 and La 2 CuO 4 , are strongly interacting electron systems, rendering them insulators with Mott-Hubbard gaps of a few electron volts. Charge carriers (holes) are introduced by chemical doping, causing an insulator-metal (IM) transition and, at low temperatures, superconductivity. The role of dopants is widely seen as limited to the introduction of holes into the CuO 2 planes (i.e. occupying electronic states derived from Cu 3d x2-y2 and O 2p x,y atomic orbitals). Most theories of high-T c superconductivity deal with pairing interactions between these planar holes. Local distortions around dopants are poorly understood, because of the experimental difficulty in obtaining such information, particularly at low doping. This has resulted in the neglect, in most theories, of the effect of such distortions on the chemical and electronic structure of high-T c superconductors. Angular-resolved X-ray absorption fine structure (XAFS) spectroscopy on oriented samples is an ideal technique to elucidate the dopant distortions. Element specificity, together with a large orientation dependence of the XAFS signal in these layered structures, allows the local structure around dopants to be resolved. Results are presented here on (Sr, Ba) and Ni dopants, which substitute at the La and Cu sites, respectively, of insulating La 2 CuO 4 . The relevance of the measured local distortions for a complete understanding of the normal and superconducting properties of cuprates is discussed. (au)

Structural, electrical and magnetic properties of Sb-doped Pr2/3Ba1/3MnO3 perovskite manganites

International Nuclear Information System (INIS)

Sen, Vikram; Panwar, Neeraj; Bhalla, G.L.; Agarwal, S.K.

2007-01-01

We report here the electrical, magnetic and micro-structural features of the Sb-doped (nominally at Mn-sites) Pr 2/3 Ba 1/3 MnO 3 perovskite manganites. Pristine material shows two insulator-metal (I-M) like transitions in the resistivity-temperature (ρ-T) behaviour. While the higher temperature transition (T P1 ) at ∼195 K is reminiscent of the usual metal-insulator transition, the lower temperature transition (T P2 ) at ∼160 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (Pr and Ba). With Sb doping at the Mn-site, both the resistivity peaks are seen to shift to lower temperatures. Room temperature resistivity and the peak values are also successively increasing with Sb doping. Scanning electron micrographs of the samples indicate a gradual increase in their grain sizes with Sb which indicates a gradual decrease in the GB density. The higher temperature insulator-metal transition (T P1 ) shift is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The observed overall resistivity increase and the shift in the resistivity hump (T P2 ) with Sb are found related to the gradually decreasing GB density and the ensuing lattice strain increase at the grain boundaries. The intrinsic MR gets suppressed and the extrinsic MR gets enhanced with Sb doping. The observed low temperature resistivity upturn related to the localization of carriers, is also seen to increase with Sb

Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2 Nanowires.

Science.gov (United States)

Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M; Zhu, Yihan; Phillips, Patrick J; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke-Bin; Klie, Robert F; Banerjee, Sarbajit; Odegard, Gregory M; Shahbazian-Yassar, Reza

2015-11-11

There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO2) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO2 are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WxV1-xO2 nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122̅) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO2 structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

Science.gov (United States)

Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

2018-05-01

Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

Describing a Strongly Correlated Model System with Density Functional Theory.

Science.gov (United States)

Kong, Jing; Proynov, Emil; Yu, Jianguo; Pachter, Ruth

2017-07-06

The linear chain of hydrogen atoms, a basic prototype for the transition from a metal to Mott insulator, is studied with a recent density functional theory model functional for nondynamic and strong correlation. The computed cohesive energy curve for the transition agrees well with accurate literature results. The variation of the electronic structure in this transition is characterized with a density functional descriptor that yields the atomic population of effectively localized electrons. These new methods are also applied to the study of the Peierls dimerization of the stretched even-spaced Mott insulator to a chain of H 2 molecules, a different insulator. The transitions among the two insulating states and the metallic state of the hydrogen chain system are depicted in a semiquantitative phase diagram. Overall, we demonstrate the capability of studying strongly correlated materials with a mean-field model at the fundamental level, in contrast to the general pessimistic view on such a feasibility.

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells.

Science.gov (United States)

Zhang, Fan; Song, Jun; Hu, Rui; Xiang, Yuren; He, Junjie; Hao, Yuying; Lian, Jiarong; Zhang, Bin; Zeng, Pengju; Qu, Junle

2018-05-01

Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (V OC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-temperature ferromagnetism in pure and Co doped CeO2 powders

International Nuclear Information System (INIS)

Wen Qiye; Zhang Huaiwu; Song Yuanqiang; Yang Qinghui; Zhu Hao; Xiao, John Q

2007-01-01

We report the room-temperature (RT) ferromagnetism (FM) observed in pure and Co doped CeO 2 powder. An insulating nonmagnetic CeO 2 single crystal, after grinding into fine powder, shows an RT-FM with a small magnetization of 0.0045 emu g -1 . However, the CeO 2 powder became paramagnetic after oxygen annealing, which strongly suggests an oxygen vacancy meditated FM ordering. Furthermore, by doping Co into CeO 2 powder the FM can significantly enhance through a F-centre exchange (FCE) coupling mechanism, in which both oxygen vacancies and magnetic ions are involved. As the Co content increases, the FM of Co doped CeO 2 initially increases to a maximum 0.47 emu g -1 , and then degrades very quickly. The complex correlation between the Co content and saturation magnetization was well interpreted by supposing the coexistence of three subsets of Co ions in CeO 2 . Our results reveal that the large RT-FM observed in Co doped CeO 2 powder originates from a combination effect of oxygen vacancies and transition metal doping

Unidirectional spin density wave state in metallic (Sr_1-xLax)₂IrO₄

Energy Technology Data Exchange (ETDEWEB)

Chen, Xiang; Schmehr, Julian L.; Islam, Zahirul; Porter, Zach; Zoghlin, Eli; Finkelstein, Kenneth; Ruff, Jacob P. C.; Wilson, Stephen D.

2018-01-09

Materials that exhibit both strong spin–orbit coupling and electron correlation effects are predicted to host numerous new electronic states. One prominent example is the J_eff = 1/2 Mott state in Sr₂IrO₄, where introducing carriers is predicted to manifest high temperature superconductivity analogous to the S=1/2 Mott state of La₂CuO₄. While bulk super- conductivity currently remains elusive, anomalous quasiparticle behaviors paralleling those in the cuprates such as pseudogap formation and the formation of a d-wave gap are observed upon electron-doping Sr₂IrO₄. Here we establish a magnetic parallel between electron-doped Sr₂IrO₄ and hole-doped La₂CuO₄ by unveiling a spin density wave state in electron-doped Sr₂IrO₄. Our magnetic resonant X-ray scattering data reveal the presence of an incom- mensurate magnetic state reminiscent of the diagonal spin density wave state observed in the monolayer cuprate (La_1-xSr_x)₂CuO₄. This link supports the conjecture that the quenched Mott phases in electron-doped Sr₂IrO₄ and hole-doped La₂CuO₄ support common competing electronic phases.

Electronic properties of junctions between aluminium and polyaniline doped with dodecylbenzene sulphonate

International Nuclear Information System (INIS)

Bantikassegn, W.

1997-07-01

Polyaniline (PANI) doped with dodecylbenzene sulphonate (DBS) anions forms a conducting organic sold. Aluminium contacts to PANI (DBS) polymer are studied using complex impedance spectroscopy and current-voltage characteristics measurements. The I-V characteristic is asymmetric and non-ohmic and shows rectification. The complex impedance spectra show two practically overlapping semi-circles which reveal the existence of two distinct regions at the metal/doped polymer interface. They are modelled by an equivalent circuit consisting of two parallel RC circuits in series representing a thin interfacial insulating (S') layer and a depletion (S) region. The device is therefore an MS'S type, where S' and S are the same chemical compounds in which the S' layer has very low doping content than the S layer. (author). 32 refs, 2 figs, 1 tab

Nematic order on the surface of a three-dimensional topological insulator

Science.gov (United States)

Lundgren, Rex; Yerzhakov, Hennadii; Maciejko, Joseph

2017-12-01

We study the spontaneous breaking of rotational symmetry in the helical surface state of three-dimensional topological insulators due to strong electron-electron interactions, focusing on time-reversal invariant nematic order. Owing to the strongly spin-orbit coupled nature of the surface state, the nematic order parameter is linear in the electron momentum and necessarily involves the electron spin, in contrast with spin-degenerate nematic Fermi liquids. For a chemical potential at the Dirac point (zero doping), we find a first-order phase transition at zero temperature between isotropic and nematic Dirac semimetals. This extends to a thermal phase transition that changes from first to second order at a finite-temperature tricritical point. At finite doping, we find a transition between isotropic and nematic helical Fermi liquids that is second order even at zero temperature. Focusing on finite doping, we discuss various observable consequences of nematic order, such as anisotropies in transport and the spin susceptibility, the partial breakdown of spin-momentum locking, collective modes and induced spin fluctuations, and non-Fermi-liquid behavior at the quantum critical point and in the nematic phase.

Mottness in high-temperature copper-oxide superconductors

International Nuclear Information System (INIS)

Phillips, Philip; Choy, T.-P.; Leigh, Robert G

2009-01-01

The standard theory of metals, Fermi liquid theory, hinges on the key assumption that although the electrons interact, the low-energy excitation spectrum stands in a one-to-one correspondence with that of a non-interacting system. In the normal state of the copper-oxide high-temperature superconductors, drastic deviations from the Fermi liquid picture are obtained, highlighted by a pseudogap, broad spectral features and T-linear resistivity. A successful theory in this context must confront the highly constraining scaling argument which establishes that all 4-Fermi interactions are irrelevant (except for pairing) at a Fermi surface. This argument lays plain that new low-energy degrees of freedom are necessary. This paper focuses on the series of experiments on copper-oxide superconductors which reveal that the number of low-energy addition states per electron per spin exceeds unity, in direct violation of the key Fermi liquid tenet. These experiments point to new degrees of freedom, not made out of the elemental excitations, as the key mechanism by which Fermi liquid theory breaks down in the cuprates. A recent theoretical advance which permits an explicit integration of the high-energy scale in the standard model for the cuprates reveals the source of the new dynamical degrees of freedom at low energies, a charge 2e bosonic field which has nothing to do with pairing but rather represents the mixing with the high-energy scales. We demonstrate explicitly that at half-filling, this new degree of freedom provides a dynamical mechanism for the generation of the charge gap and antiferromagnetism in the insulating phase. At finite doping, many of the anomalies of the normal state of the cuprates including the pseudogap, T-linear resistivity and the mid-infrared band are reproduced. A possible route to superconductivity is explored

The metallic interface between the two band insulators LaGaO3 and SrTiO3

KAUST Repository

Nazir, Safdar; Schwingenschlö gl, Udo; Singh, Nirpendra

2011-01-01

The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

The metallic interface between the two band insulators LaGaO3 and SrTiO3

KAUST Repository

Nazir, Safdar

2011-06-28

The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

Science.gov (United States)

Lunkenheimer, P.; Mayr, F.; Loidl, A.

2006-07-01

We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

Science.gov (United States)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

Theory of novel normal and superconducting states in doped oxide high-Tc superconductors

International Nuclear Information System (INIS)

Dzhumanov, S.

2001-10-01

A consistent and complete theory of the novel normal and superconducting (SC) states of doped high-T c superconductors (HTSC) is developed by combining the continuum model of carrier self-trapping, the tight-binding model and the novel Fermi-Bose-liquid (FBL) model. The ground-state energy of carriers in lightly doped HTSC is calculated within the continuum model and adiabatic approximation using the variational method. The destruction of the long-range antiferromagnetic (AF) order at low doping x≥ x cl ≅0.015, the formation of the in-gap states or bands and novel (bi)polaronic insulating phases at x c2 ≅0.06-0.08, and the new metal- insulator transition at x≅x c2 in HTSC are studied within the continuum model of impurity (defect) centers and large (bi)polarons by using the appropriate tight-binding approximations. It is found that the three-dimensional (3d) large (bi)polarons are formed at ε ∞ /ε 0 ≤0.1 and become itinerant when the (bi)polaronic insulator-to-(bi)polaronic metal transitions occur at x x c2 . We show that the novel pseudogapped metallic and SC states in HTSC are formed at x c2 ≤x≤x p ≅0.20-0.24. We demonstrate that the large polaronic and small BCS-like pairing pseudogaps opening in the excitation spectrum of underdoped (x c2 BCS =0.125), optimally doped (x BCS o ≅0.20) and overdoped (x>x o ) HTSC above T c are unrelated to superconductivity and they are responsible for the observed anomalous optical, transport, magnetic and other properties of these HTSC. We develop the original two-stage FBL model of novel superconductivity describing the combined novel BCS-like pairing scenario of fermions and true superfluid (SF) condensation scenario of composite bosons (i.e. bipolarons and cooperons) in any Fermi-systems, where the SF condensate gap Δ B and the BCS-like pairing pseudogap Δ F have different origins. The pair and single particle condensations of attracting 3d and two- dimensional (2d) composite bosons are responsible for

Phase diagram of a bosonic ladder with two coupled chains

International Nuclear Information System (INIS)

Luthra, Meetu Sethi; Mishra, Tapan; Pai, Ramesh V.; Das, B. P.

2008-01-01

We study a bosonic ladder with two coupled chains using the finite-size density-matrix renormalization group method. We show that in a commensurate bosonic ladder the critical on-site interaction (U C ) for the superfluid to Mott insulator transition gets larger as the interchain hopping (t perpendicular ) increases. We analyze this quantum phase transition and obtain the phase diagram in the t perpendicular -U plane. We also consider the asymmetric case where the on-site interactions are different in the two chains and have shown that the system as a whole will not be in the Mott insulator phase unless both the chains have on-site interactions greater than the critical value

Two-Magnon Raman Scattering and Pseudospin-Lattice Interactions in Sr_{2}IrO_{4} and Sr_{3}Ir_{2}O_{7}.

Science.gov (United States)

Gretarsson, H; Sung, N H; Höppner, M; Kim, B J; Keimer, B; Le Tacon, M

2016-04-01

We have used Raman scattering to investigate the magnetic excitations and lattice dynamics in the prototypical spin-orbit Mott insulators Sr_{2}IrO_{4} and Sr_{3}Ir_{2}O_{7}. Both compounds exhibit pronounced two-magnon Raman scattering features with different energies, line shapes, and temperature dependencies, which in part reflect the different influence of long-range frustrating exchange interactions. Additionally, we find strong Fano asymmetries in the line shapes of low-energy phonon modes in both compounds, which disappear upon cooling below the antiferromagnetic ordering temperatures. These unusual phonon anomalies indicate that the spin-orbit coupling in Mott-insulating iridates is not sufficiently strong to quench the orbital dynamics in the paramagnetic state.

Mechanism of high-T{sub c} superconductivity studied by neutron scattering

Energy Technology Data Exchange (ETDEWEB)

Yamada, Kazuyoshi [Tohoku Univ., Sendai (Japan). Faculty of Science

1998-03-01

La{sub 2-x}Sr{sub x}CuO{sub 4} is one of the typical high-T{sub c} cuprates where Sr-doping creates many phases from the Mott insulator at x=0 nonsuperconducting metal for x>0.26; the high-T{sub c} superconductivity appears for 0.06{<=}x{<=}0.26. We have grown large single crystals of La{sub 2-x}Sr{sub x}CuO{sub 4} over a wide the doping rate up to x=0.3 and performed systematic neutron scattering experiments for the first time. We obtained several results indicating an intimate relation between the dynamical spin correlations and the superconductivity. Incommensurate spatial modulation appears in the antiferromagnetic spin correlations beyond x=0.05 close to the lower boundary of the superconducting phase. We found that the degree of the spatial modulation or the incommensurability {delta} increases with doping and T{sub c} is linearly scaled with {delta} for x{<=}0.15. A well-defined spin excitation gap was observed only for x=0.15 where the T{sub c} reaches the maximum value. And the dynamical spin coherence degrades upon doping with x>>0.15. There results strongly suggest the essential role of the magnetically correlated region and the spatial spin modulation in the CuO{sub 2} planes to sustain or create the superconductivity. (author)

Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

Science.gov (United States)

Harter, John Wallace

Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi �

Cellulose Insulation

Science.gov (United States)

1980-01-01

Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

Disorder and pseudogap in strongly correlated systems: Phase diagram in the DMFT + Σ approach

International Nuclear Information System (INIS)

Kuleeva, N. A.; Kuchinskii, E. Z.

2013-01-01

The influence of disorder and pseudogap fluctuations on the Mott insulator-metal transition in strongly correlated systems has been studied in the framework of the generalized dynamic mean field theory (DMFT + Σ approach). Using the results of investigations of the density of states (DOS) and optical conductivity, a phase diagram (disorder-Hubbard interaction-temperature) is constructed for the paramagnetic Anderson-Hubbard model, which allows both the effects of strong electron correlations and the influence of strong disorder to be considered. Strong correlations are described using the DMFT, while a strong disorder is described using a generalized self-consistent theory of localization. The DOS and optical conductivity of the paramagnetic Hubbard model have been studied in a pseudogap state caused by antiferromagnetic spin (or charge) short-range order fluctuations with a finite correlation length, which have been modeled by a static Gaussian random field. The effect of a pseudogap on the Mott insulator-metal transition has been studied. It is established that, in both cases, the static Gaussian random field (related to the disorder or pseudogap fluctuations) leads to suppression of the Mott transition, broadening of the coexistence region of the insulator and metal phases, and an increase in the critical temperature at which the coexistence region disappears

Neutron-transmutation-doped germanium bolometers

Science.gov (United States)

Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

1983-01-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Half-metallic ferromagnetism in nitrogen - doped ionic insulator (Li2O): a DFT study

International Nuclear Information System (INIS)

Eithiraj, R.D.; Kalpana, G.

2010-01-01

The tight binding linear muffin-tin orbital (TB-LMTO) method, is used to study the electronic structure and magnetism in nitrogen - doped Li 2 O (antifluorite - CaF 2 structure). Total energy calculations show that the antifluorite ferromagnetic state is more stable than the antifluorite non-magnetic state at equilibrium volume. Ground state properties such as equilibrium lattice constant and bulk modulus were calculated. The calculations reveal that non-magnetic impurities can induce stable half-metallic ferromagnetic ground state in Li 2 O. The magnetic moment of nitrogen doped Li 2 O can be tuned over a range between 1.00 μ B and 3.00 μ B by changing the concentration of nitrogen from 25% to 75%. (author)

Review and calculation of Mott scattering cross section by unscreened point nuclei

International Nuclear Information System (INIS)

Idoeta, R.; Legarda, F.

1992-01-01

A new tabulation of the ratio of the ''exact'' Mott cross section for unscreened point nuclei to the classical Rutherford cross section for electrons and positions has been made. Because of the infinite slowly converging series appearing in this ratio we have made two series transformations. With this evaluation the ratio reached convergence within six significant figures after less than a hundred terms and very low computing time. So the ratios evaluated have less relative error than those in the literature and covers a greater range of energy and atomic number. (orig.)

Chemical Gating of a Weak Topological Insulator: Bi14Rh3I9.

Science.gov (United States)

Ghimire, Madhav Prasad; Richter, Manuel

2017-10-11

The compound Bi 14 Rh 3 I 9 has recently been suggested as a weak three-dimensional topological insulator on the basis of angle-resolved photoemission and scanning-tunneling experiments in combination with density functional (DF) electronic structure calculations. These methods unanimously support the topological character of the headline compound, but a compelling confirmation could only be obtained by dedicated transport experiments. The latter, however, are biased by an intrinsic n-doping of the material's surface due to its polarity. Electronic reconstruction of the polar surface shifts the topological gap below the Fermi energy, which would also prevent any future device application. Here, we report the results of DF slab calculations for chemically gated and counter-doped surfaces of Bi 14 Rh 3 I 9 . We demonstrate that both methods can be used to compensate the surface polarity without closing the electronic gap.

The local structure, magnetic, and transport properties of Cr-doped In2O3 films

International Nuclear Information System (INIS)

Wang Shiqi; An Yukai; Feng Deqiang; Liu Jiwen; Wu Zhonghua

2013-01-01

Cr-doped In 2 O 3 films were deposited on Si (100) substrates by RF-magnetron sputtering technique. The local structure, magnetic, and transport properties of films are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, X-ray absorption fine structure, Hall effect, R-T, and magnetic measurements. Structural analysis clearly indicates that Cr ions substitute for In 3+ sites of the In 2 O 3 lattice in the valence of +2 states and Cr-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. The films with low Cr concentration show a crossover from semiconducting to metallic transport behavior, whereas only semiconducting behavior is observed in high Cr concentration films. The transport property of all films is governed by Mott variable range hopping behavior, suggesting that the carriers are strongly localized. Magnetic characterizations show that the saturated magnetization of films increases first, and then decreases with Cr doping, while carrier concentration n c decreases monotonically, implying that the ferromagnetism is not directly induced by the mediated carriers. It can be concluded the ferromagnetism of films is intrinsic and originates from electrons bound in defect states associated with oxygen vacancies.

The elastic constants of V2O3 in the insulating phase

International Nuclear Information System (INIS)

Yelon, W.B.; Keem, J.E.

1979-01-01

The initial slopes of the acoustic phonon dispersion curves in (Vsub(0.98)Crsub(0.02)) 2 O 3 have been measured at room temperature in several of the high symmetry directions by inelastic neutron scattering. From these data several sound velocities and four independent elastic constants have been determined. Although the Cr doped specimen is in the insulating phase and pure V 2 O 3 is metallic, these results are in good agreement with recent data obtained by ultrasonic measurements on pure V 2 O 3 . (author)

Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

Science.gov (United States)

Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

2018-01-01

A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

Energy Technology Data Exchange (ETDEWEB)

Bi, Kedong, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China); Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie; Pettes, Michael T.; Shi, Li, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Matsushita, Satoshi; Akagi, Kazuo [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Goh, Munju [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Eunha-ri san 101, Bondong-eup, Wanju-gun, Jeolabuk-do 565-905 (Korea, Republic of)

2013-11-21

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m{sup −1} K{sup −1} near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion.

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

International Nuclear Information System (INIS)

Bi, Kedong; Weathers, Annie; Pettes, Michael T.; Shi, Li; Matsushita, Satoshi; Akagi, Kazuo; Goh, Munju

2013-01-01

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m −1  K −1 near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion

Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

International Nuclear Information System (INIS)

Lunkenheimer, P.; Mayr, F.; Loidl, A.

2006-01-01

We report the frequency-dependent conductivity of the manganite system La 1-x Sr x MnO 3 (x≤0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Microscopic description of orbital-selective spin ordering in BaMn2As2

Science.gov (United States)

Craco, L.; Carara, S. S.

2018-05-01

Using generalized gradient approximation+dynamical mean-field theory, we provide a microscopic description of orbital-selective spin ordering in the tetragonal manganese pnictide BaMn2As2 . We demonstrate the coexistence of local moments and small band-gap electronic states in the parent compound. We also explore the role played by electron/hole doping, showing that the Mott insulating state is rather robust to small removal of electron charge carriers similar to cuprate oxide superconductors. Good qualitative accord between theory and angle-resolved photoemission as well as electrical transport provides support to our view of orbital-selective spin ordering in BaMn2As2 . Our proposal is expected to be an important step to understanding the emergent correlated electronic structure of materials with persisting ordered localized moments coexisting with Coulomb reconstructed nonmagnetic electronic states.

Weak coupling theory of high temperature superconductors

International Nuclear Information System (INIS)

Labbe, J.

1990-01-01

Many theories of the high T c superconductors are founded on the hypothesis that the electron-electron correlations are so strong in these materials that, in the absence of doping or internal charge transfer, they should be Mott insulators. The authors consider this hypothesis as unlikely for the following reasons. At first, very strong correlations would arise from a very large repulsive Coulomb energy between electrons within each atom. This would be the case only with very strongly localized atomic orbitals, as for instance the f orbitals in the rare earths, leading to very narrow energy bands. But in the copper oxides, the d orbitals of copper, or the p orbitals of oxygen, are not so strongly localized, and thus the intra-atomic repulsive Coulomb energy has no reason to be much larger than in the simple transitional metals or their other compounds

Critical behavior near the Mott transition in the half-filled asymmetric Hubbard model

Energy Technology Data Exchange (ETDEWEB)

Hoang, Anh-Tuan, E-mail: hatuan@iop.vast.ac.vn [Institute of Physics, Vietnam Academy of Science and Technology, Hanoi (Viet Nam); Le, Duc-Anh [Faculty of Physics, Hanoi National University of Education, Xuan Thuy 136, Cau Giay, Hanoi 10000 (Viet Nam)

2016-03-15

We study the half-filled asymmetric Hubbard model within the two-site dynamical mean field theory. At zero temperature, explicit expressions of the critical interaction U{sub c} for the Mott transition and the local self-energy are analytically derived. Critical behavior of the quasiparticle weights and the double occupancy are obtained analytically as functions of the on-site interaction U and the hopping asymmetry r. Our results are in good agreement with the ones obtained by much more sophisticated theory.

Dynamical mean-field theory and path integral renormalisation group calculations of strongly correlated electronic states

Energy Technology Data Exchange (ETDEWEB)

Heilmann, D.B.

2007-02-15

The two-plane HUBBARD model, which is a model for some electronic properties of undoped YBCO superconductors as well as displays a MOTT metal-to-insulator transition and a metal-to-band insulator transition, is studied within Dynamical Mean-Field Theory using HIRSCH-FYE Monte Carlo. In order to find the different transitions and distinguish the types of insulator, we calculate the single-particle spectral densities, the self-energies and the optical conductivities. We conclude that there is a continuous transition from MOTT to band insulator. In the second part, ground state properties of a diagonally disordered HUBBARD model is studied using a generalisation of Path Integral Renormalisation Group, a variational method which can also determine low-lying excitations. In particular, the distribution of antiferromagnetic properties is investigated. We conclude that antiferromagnetism breaks down in a percolation-type transition at a critical disorder, which is not changed appreciably by the inclusion of correlation effects, when compared to earlier studies. Electronic and excitation properties at the system sizes considered turn out to primarily depend on the geometry. (orig.)

Dynamical mean-field theory and path integral renormalisation group calculations of strongly correlated electronic states

International Nuclear Information System (INIS)

Heilmann, D.B.

2007-02-01

The two-plane HUBBARD model, which is a model for some electronic properties of undoped YBCO superconductors as well as displays a MOTT metal-to-insulator transition and a metal-to-band insulator transition, is studied within Dynamical Mean-Field Theory using HIRSCH-FYE Monte Carlo. In order to find the different transitions and distinguish the types of insulator, we calculate the single-particle spectral densities, the self-energies and the optical conductivities. We conclude that there is a continuous transition from MOTT to band insulator. In the second part, ground state properties of a diagonally disordered HUBBARD model is studied using a generalisation of Path Integral Renormalisation Group, a variational method which can also determine low-lying excitations. In particular, the distribution of antiferromagnetic properties is investigated. We conclude that antiferromagnetism breaks down in a percolation-type transition at a critical disorder, which is not changed appreciably by the inclusion of correlation effects, when compared to earlier studies. Electronic and excitation properties at the system sizes considered turn out to primarily depend on the geometry. (orig.)

Quantum criticality around metal-insulator transitions of strongly correlated electron systems

Science.gov (United States)

Misawa, Takahiro; Imada, Masatoshi

2007-03-01

Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

Sputter deposited gallium doped ZnO for TCO applications

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

2010-07-01

Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

Thermal insulation

International Nuclear Information System (INIS)

Aspden, G.J.; Howard, R.S.

1988-01-01

The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

Thermal process induced change of conductivity in As-doped ZnO

Science.gov (United States)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

Two-magnon Raman scattering in a Mott-Hubbard antiferromagnet

International Nuclear Information System (INIS)

Basu, S.; Singh, A.

1996-01-01

A perturbation-theoretic diagrammatic scheme is developed for systematically studying the two-magnon Raman scattering in a Mott-Hubbard antiferromagnet. The fermionic structure of the magnon interaction vertex is obtained at order-1/N level in an inverse-degeneracy expansion, and the relevant two-magnon propagator is obtained by incorporating magnon interactions at a ladder-sum level. Evaluation of the magnon interaction vertex in the large-U limit yields a nearest-neighbor instantaneous interaction with interaction energy -J. Application of this approach to the intermediate-U regime, which is of relevance for cuprate antiferromagnets, is also discussed. Incorporating the zero-temperature magnon damping, which is estimated in terms of quantum spin fluctuations, the two-magnon Raman scattering intensity is evaluated and compared with experiments on La 2 CuO 4 . copyright 1996 The American Physical Society

Physical properties of laser-ablated La1-xSrxCoO3-δ films

International Nuclear Information System (INIS)

Park, J. S.; Park, S. Y.; Park, H. G.; Kim, S. M.; Lee, Y. P.; Prokhorov, V. G.; Ishchuk, V. M.

2002-01-01

The magnetic and the transport properties of La 1-x Sr x CoO 3 films prepared by using laser ablation were investigated. The metal-insulator transition was observed with decreasing Sr 2+ doping (x ≤ 0.25). The temperature-dependent resistivity, ρ(T), in the metallic state was shown to be governed by electron-electron scattering by taking into account the origin of a small energy gap in the spectrum of electron excitations. The analysis of the ρ(T) data showed that the transport of carriers at high temperatures (above the temperature of the magnetic transition) in the insulating state (x ≤ 0.25) was governed by Mott-like variable-range hopping rather than by the motion of lattice polarons. In the low-temperature range, the ρ(T) dependence was fairly well fitted by using the two parallel-resistance model, where one resistance corresponded to the ferromagnetic metal cluster network and the other to the insulating matrix. Two mechanisms of magnetoresistance were involved in the investigated films. In the metallic state (x > 0.25) the magnetoresistance was provided by a change in the rate of electron scattering with spin disorder, which was influenced by the magnetic field and resulted in a small peak at the Curie temperature. In the insulating state (x ≤ 0.25), a phase separation into ferromagnetic metal clusters and the insulating matrix occurred, and an applied magnetic field induced the growth of the ferromagnetic metal phase, with the double-exchange mechanism not playing a role

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

Science.gov (United States)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Observation of antiferromagnetic order collapse in the pressurized insulator LaMnPO

Science.gov (United States)

Guo, Jing; Simonson, Jack; Sun, Liling; Wu, Qi; Guo, Peiwen; Zhang, Chao; Gu, Dachun; Kotliar, Gabriel; Aronson, Meigan; Zhao, Zhongxian

2014-03-01

The emergence of superconductivity in the iron pnictide or cuprate high temperature superconductors usually accompanies the suppression of a long-ranged antiferromagnetic (AFM) order state in a corresponding parent compound by doping or pressurizing. A great deal of effort by doping has been made to find superconductivity in Mn-based compounds, which are thought to bridge the gap between the two families of high temperature superconductors, but the AFM order was not successfully suppressed. Here we report the first observations of the pressure-induced elimination of long-ranged AFM order at ~ 34 GPa and a crossover from an AFM insulating to an AFM metallic state at ~ 20 GPa in LaMnPO single crystals that are iso-structural to the LaFeAsO superconductor by in-situ high pressure resistance and ac susceptibility measurements. These findings are of importance to explore potential superconductivity in Mn-based compounds and to shed new light on the underlying mechanism of high temperature superconductivity.

Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform

Science.gov (United States)

Islam, M. F.; Canali, C. M.; Pertsova, A.; Balatsky, A.; Mahatha, S. K.; Carbone, C.; Barla, A.; Kokh, K. A.; Tereshchenko, O. E.; Jiménez, E.; Brookes, N. B.; Gargiani, P.; Valvidares, M.; Schatz, S.; Peixoto, T. R. F.; Bentmann, H.; Reinert, F.; Jung, J.; Bathon, T.; Fauth, K.; Bode, M.; Sessi, P.

2018-04-01

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb2Te3 . By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-ray magnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb2Te3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb2Te3 in the ferromagnetic state.

Disentangled Cooperative Orderings in Artificial Rare-Earth Nickelates

Science.gov (United States)

Middey, S.; Meyers, D.; Kareev, M.; Cao, Yanwei; Liu, X.; Shafer, P.; Freeland, J. W.; Kim, J.-W.; Ryan, P. J.; Chakhalian, J.

2018-04-01

Coupled transitions between distinct ordered phases are important aspects behind the rich phase complexity of correlated oxides that hinder our understanding of the underlying phenomena. For this reason, fundamental control over complex transitions has become a leading motivation of the designer approach to materials. We have devised a series of new superlattices by combining a Mott insulator and a correlated metal to form ultrashort period superlattices, which allow one to disentangle the simultaneous orderings in RENiO3 . Tailoring an incommensurate heterostructure period relative to the bulk charge ordering pattern suppresses the charge order transition while preserving metal-insulator and antiferromagnetic transitions. Such selective decoupling of the entangled phases resolves the long-standing puzzle about the driving force behind the metal-insulator transition and points to the site-selective Mott transition as the operative mechanism. This designer approach emphasizes the potential of heterointerfaces for selective control of simultaneous transitions in complex materials with entwined broken symmetries.

Correlated effective field theory in transition metal compounds

International Nuclear Information System (INIS)

Mukhopadhyay, Subhasis; Chatterjee, Ibha

2004-01-01

temperature, stoichiometric composition. The magnetic properties of these compounds can be studied very well with the CEF theory. The physics of the insulating phase should definitely play an important role in these oxides which show metallic and superconducting behaviour as a function of doping in the parent compounds which are Mott insulators

Estimation of thermal insulation performance in multi-layer insulator for liquid helium pipe

International Nuclear Information System (INIS)

Shibanuma, Kiyoshi; Kuriyama, Masaaki; Shibata, Takemasa

1991-01-01

For a multi-layer insulator around the liquid helium pipes for cryopumps of JT-60 NBI, a multi-layer insulator composed of 10 layers, which can be wound around the pipe at the same time and in which the respective layers are in concentric circles by shifting them in arrangement, has been developed and tested. As the result, it was shown that the newly developed multi-layer insulator has better thermal insulation performance than the existing one, i.e. the heat load of the newly developed insulator composed of 10 layers was reduced to 1/3 the heat load of the existing insulator, and the heat leak at the joint of the insulator in longitudinal direction of the pipe was negligible. In order to clarify thermal characteristics of the multi-layer insulator, the heat transfer through the insulator has been analyzed considering the radiation heat transfer by the netting spacer between the reflectors, and the temperature dependence on the emissivities and the heat transmission coefficients of these two components of the insulator. The analytical results were in good agreements with the experimental ones, so that the analytical method was shown to be valid. Concerning the influence of the number of layers and the layer density on the insulation performance of the insulator, analytical results showed that the multi-layer insulator with the number of layer about N = 20 and the layer density below 2.0 layer/mm was the most effective for the liquid helium pipe of a JT-60 cryopump. (author)

Thermal insulating panel

Energy Technology Data Exchange (ETDEWEB)

Hughes, J.T.

1985-09-11

A panel of thermal insulation material has at least one main portion which comprises a dry particulate insulation material compressed within a porous envelope so that it is rigid or substantially rigid and at least one auxiliary portion which is secured to and extends along at least one of the edges of the main portions. The auxiliary portions comprise a substantially uncompressed dry particulate insulation material contained within an envelope. The insulation material of the auxiliary portion may be the same as or may be different from the insulation material of the main portion. The envelope of the auxiliary portion may be made of a porous or a non-porous material. (author).

Wall insulation system

Energy Technology Data Exchange (ETDEWEB)

Kostek, P.T.

1987-08-11

In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

Mapping the electron correlation onto a model Hamiltonian for Cs/GaAs(110): a Mott-Hubbard insulator at quarter filling

CERN Document Server

Chen Chang Feng

1998-01-01

We have constructed an effective model Hamiltonian in the Hubbard formalism for the Cs/GaAs(110) surface at quarter-monolayer coverage with all of the parameters extracted from constrained local-density-approximation (LDA) pseudopotential calculations. The single-particle excitation spectrum of the model has been calculated using an exact-diagonalization technique to help determine the relevant interaction terms. It is shown that the intersite interaction between the nearest-neighbour Ga sites plays the key role in determining the insulating nature of the system and must be included in the model, in contrast to suggestions of some previous work. Our results show that a reliable mapping of LDA results onto an effective model Hamiltonian can be achieved by combining constrained LDA calculations for the Hamiltonian parameters and many-body calculations of the single-particle excitation spectrum for identifying relevant interaction terms. (author)

Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

Science.gov (United States)

Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

2018-04-01

The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

Reduction of heat insulation upon soaking of the insulation layer

Science.gov (United States)

Achtliger, J.

1983-09-01

Improved thermal protection of hollow masonry by introduction of a core insulation between the inner and outer shell is discussed. The thermal conductivity of insulation materials was determined in dry state and after soaking by water with different volume-related moisture contents. The interpolated thermal conductivity values from three measured values at 10 C average temperature are presented as a function of the pertinent moisture content. Fills of expanded polystyrene, perlite and granulated mineral fibers, insulating boards made of mineral fibers and in situ cellular plastics produced from urea-formaldehyde resin were investigated. Test results show a confirmation of thermal conductivity values for insulating materials in hollow masonry.

Transport anisotropy and electron correlations in the layered molecular compounds Z [Pd(dmit)2] 2 (Z =Me4N ,Et2Me2As ,EtMe3P ) with different interlayer coupling

Science.gov (United States)

Shimizu, Yasuhiro; Kato, Reizo

2018-03-01

In-plane resistivity ρ∥ and out-of-plane resistivity ρ⊥ were investigated across the pressure-induced Mott transition in molecular Mott insulators Z [Pd(dmit)2] 2 (Z =Et2Me2As , Me4N , and EtMe3P ) having a triangular lattice. All three compounds exhibit superconducting transition with Tc=5.5 -7.0 K in the metallic phase near the Mott insulating phase. For the β'-Et2Me2As salt, the anisotropy ρ⊥/ρ∥ exceeds 103 at low temperatures, indicating a highly two-dimensional electronic state with incoherent interlayer hopping. The β -Me4N salt has a smaller ρ⊥/ρ∥ exhibiting a weak interlayer coupling. The resistivity is dominated by electron-electron scattering in the metallic state for these two compounds, as expected in a correlated Fermi liquid. On the other hand, the EtMe3P salt with a valence bond order state becomes a nearly three-dimensional metal across the Mott transition, in which the electron correlation is strongly suppressed. Instead, the electron-phonon scattering plays a significant role in the resistivity. The different interlayer coherence is quantitatively explained by the calculated interlayer transfer integrals between Pd (dmit) 2 molecules. These results suggest that the dimensionality governs the nature of electron correlations in the Fermi liquid state.

Probing correlated quantum many-body systems at the single-particle level

Energy Technology Data Exchange (ETDEWEB)

Endres, Manuel

2013-02-27

The detection of correlation and response functions plays a crucial role in the experimental characterization of quantum many-body systems. In this thesis, we present novel techniques for the measurement of such functions at the single-particle level. Specifically, we show the single-atom- and single-site-resolved detection of an ultracold quantum gas in an optical lattice. The quantum gas is described by the Bose-Hubbard model, which features a zero temperature phase transition from a superfluid to a Mott-insulating state, a paradigm example of a quantum phase transition. We used the aforementioned detection techniques to study correlation and response properties across the superfluid-Mott-insulator transition. The single-atom sensitivity of our method is achieved by fluorescence detection of individual atoms with a high signal-to-noise ratio. A high-resolution objective collects the fluorescence light and yields in situ 'snapshots' of the quantum gas that allow for a single-site-resolved reconstruction of the atomic distribution. This allowed us to measure two-site and non-local correlation-functions across the superfluid-Mott-insulator transition. Non-local correlation functions are based on the information of an extended region of the system and play an important role for the characterization of low-dimensional quantum phases. While non-local correlation functions were so far only theoretical tools, our results show that they are actually experimentally accessible. Furthermore, we used a new thermometry scheme, based on the counting of individual thermal excitations, to measure the response of the system to lattice modulation. Using this method, we studied the excitation spectrum of the system across the two-dimensional superfluid-Mott-insulator transition. In particular, we detected a 'Higgs' amplitude mode in the strongly-interacting superfluid close to the transition point where the system is described by an effectively Lorentz

Probing correlated quantum many-body systems at the single-particle level

International Nuclear Information System (INIS)

Endres, Manuel

2013-01-01

The detection of correlation and response functions plays a crucial role in the experimental characterization of quantum many-body systems. In this thesis, we present novel techniques for the measurement of such functions at the single-particle level. Specifically, we show the single-atom- and single-site-resolved detection of an ultracold quantum gas in an optical lattice. The quantum gas is described by the Bose-Hubbard model, which features a zero temperature phase transition from a superfluid to a Mott-insulating state, a paradigm example of a quantum phase transition. We used the aforementioned detection techniques to study correlation and response properties across the superfluid-Mott-insulator transition. The single-atom sensitivity of our method is achieved by fluorescence detection of individual atoms with a high signal-to-noise ratio. A high-resolution objective collects the fluorescence light and yields in situ 'snapshots' of the quantum gas that allow for a single-site-resolved reconstruction of the atomic distribution. This allowed us to measure two-site and non-local correlation-functions across the superfluid-Mott-insulator transition. Non-local correlation functions are based on the information of an extended region of the system and play an important role for the characterization of low-dimensional quantum phases. While non-local correlation functions were so far only theoretical tools, our results show that they are actually experimentally accessible. Furthermore, we used a new thermometry scheme, based on the counting of individual thermal excitations, to measure the response of the system to lattice modulation. Using this method, we studied the excitation spectrum of the system across the two-dimensional superfluid-Mott-insulator transition. In particular, we detected a 'Higgs' amplitude mode in the strongly-interacting superfluid close to the transition point where the system is described by an effectively Lorentz-invariant low-energy theory

Many-body Anderson localization of strongly interacting bosons in random lattices

International Nuclear Information System (INIS)

Katzer, Roman

2015-05-01

In the present work, we investigate the problem of many-body localization of strongly interacting bosons in random lattices within the disordered Bose-Hubbard model. This involves treating both the local Mott-Hubbard physics as well as the non-local quantum interference processes, which give rise to the phenomenon of Anderson localization, within the same theory. In order to determine the interaction induced transition to the Mott insulator phase, it is necessary to treat the local particle interaction exactly. Therefore, here we use a mean-field approach that approximates only the kinetic term of the Hamiltonian. This way, the full problem of interacting bosons on a random lattice is reduced to a local problem of a single site coupled to a particle bath, which has to be solved self-consistently. In accordance to previous works, we find that a finite disorder width leads to a reduced size of the Mott insulating regions. The transition from the superfluid phase to the Bose glass phase is driven by the non-local effect of Anderson localization. In order to describe this transition, one needs to work within a theory that is non-local as well. Therefore, here we introduce a new approach to the problem. Based on the results for the local excitation spectrum obtained within the mean-field theory, we reduce the full, interacting model to an effective, non-interacting model by applying a truncation scheme to the Hilbert space. Evaluating the long-ranged current density within this approximation, we identify the transition from the Bose glass to the superfluid phase with the Anderson transition of the effective model. Resolving this transition using the self-consistent theory of localization, we obtain the full phase diagram of the disordered Bose-Hubbard model in the regime of strong interaction and larger disorder. In accordance to the theorem of inclusions, we find that the Mott insulator and the superfluid phase are always separated by the compressible, but insulating

Electron energy-loss spectroscopy on n-type doped high-temperature superconductors and related systems

International Nuclear Information System (INIS)

Alexander, M.

1992-08-01

Electron-enery loss spectroscopy measurements on n-type doped high temperature superconductors, their undoped parent compounds, Y-doped Bi 2 Sr 2 CaCu 2 O 8 and some rare earth oxides are presented. The undoped parent compounds Ln 2 CuO 4 (Ln = Pr, Nd, Sm) are charge transfer insulators with a charge transfer energy gap of 1.4 eV. The conduction band lies in the CuO 2 plane and has mainly Cu3d x 2 -y 2 character. O2p x,y states are slightly hybridized with this band. Upon partially substituting the trivalent Ln ions by tetravalent Ce or Th and monovalent F for the O ions, electron doping of the CuO 2 plane occurs with the electrons having mainly Cu3d character. A rigid band behaviour is proposed by several band structure calculations could be ruled out, as well as the occurence of so called 'mid-gap' states appearing inside the band gap between the valence and conduction bands. The position of the Fermi level was found to be at the bottom of the conduction bands. No measurable influence of the reduction process, necessary to obtain superconductivity, was detected in the unoccupied density of states. Characteristics shifts of the measured oxygen and copper edges were correlated with crossing the metal-insulator transition. These shifts are most probably caused by an improved screening capacity of the free charge carriers. A similar effect was also observed in Y-doped Bi 2 Sr 2 CaCu 2 O 8 . Thus, it was possible to show that the disappearance of the valence band hole states upon doping did not occur in a rigid-band-like manner. The low energy excitations in Nd 1.85 Ce 0.15 CuO 4-δ showed a plasmon like excitation at about 1 eV as well as a reduction and an energy shift of the charge transfer excitation. The dispersion of this plasmon excitation was determined. (orig.)

Correlated Dirac particles and superconductivity on the honeycomb lattice

Science.gov (United States)

Wu, Wei; Scherer, Michael M.; Honerkamp, Carsten; Le Hur, Karyn

2013-03-01

We investigate the properties of the nearest-neighbor singlet pairing and the emergence of d-wave superconductivity in the doped honeycomb lattice considering the limit of large interactions and the t-J1-J2 model. First, by applying a renormalized mean-field procedure as well as slave-boson theories which account for the proximity to the Mott-insulating state, we confirm the emergence of d-wave superconductivity, in agreement with earlier works. We show that a small but finite J2 spin coupling between next-nearest neighbors stabilizes d-wave symmetry compared to the extendeds-wave scenario. At small hole doping, to minimize the energy and to gap the whole Fermi surface or all the Dirac points, the superconducting ground state is characterized by a d+id singlet pairing assigned to one valley and a d-id singlet pairing to the other, which then preserves time-reversal symmetry. The slightly doped situation is distinct from the heavily doped case (around 3/8 and 5/8 filling) supporting a pure chiral d+id symmetry and breaking time-reversal symmetry. Then, we apply the functional renormalization group and study in more detail the competition between antiferromagnetism and superconductivity in the vicinity of half filling. We discuss possible applications to strongly correlated compounds with copper hexagonal planes such as In3Cu2VO9. Our findings are also relevant to the understanding of exotic superfluidity with cold atoms.

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

KAUST Repository

Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

2017-01-01

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

KAUST Repository

Cossu, Fabrizio

2017-08-01

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

Electrical characterisation of Sn doped InAs grown by MOVPE

International Nuclear Information System (INIS)

Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

2008-01-01

The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Propagation Characteristics of Multilayer Hybrid Insulator-Metal-Insulator and Metal-Insulator-Metal Plasmonic Waveguides

Directory of Open Access Journals (Sweden)

M. Talafi Noghani

2014-02-01

Full Text Available Propagation characteristics of symmetrical and asymmetrical multilayer hybrid insulator-metal-insulator (HIMI and metal-insulator-metal (HMIM plasmonic slab waveguides are investigated using the transfer matrix method. Propagation length (Lp and spatial length (Ls are used as two figures of merit to qualitate the plasmonic waveguides. Symmetrical structures are shown to be more performant (having higher Lp and lower Ls, nevertheless it is shown that usage of asymmetrical geometry could compensate for the performance degradation in practically realized HIMI waveguides with different substrate materials. It is found that HMIM slab waveguide could support almost long-range subdiffraction plasmonic modes at dimensions lower than the spatial length of the HIMI slab waveguide.

Modification and structuring of conducting polymer films on insulating substrates by ion beam treatment

International Nuclear Information System (INIS)

Asmus, T.; Wolf, Gerhard K.

2000-01-01

Besides the commonly used procedures of UV-, X-ray and electron beam lithography, surface structuring by ion beam processes represents an alternative route to receive patterns in the nanometre-micrometre scale. In this work we focused on changes of surface properties of the polymer materials induced by ion irradiation and on reproducing hexagonal and square patterns in the micrometre scale. To achieve a better understanding of modification and structuring of insulating and conducting polymers by ion beam treatment we investigated effects of 14 keV Ar + bombardment on thin films of doped conducting polyethoxithiophene (PEOT) and polyethylenedioxithiophene (PEDT) on polyethersulfone (PES) as insulating substrate within the fluence range from 10 14 to 10 17 ions/cm 2 . Changes of surface properties like wettability, solubility, topology and electrochemical behaviour have been studied by contact angle technique, AFM/LFM, cyclovoltammetry and electrochemical microelectrode. By irradiation through copper masks structured patterns were achieved. These patterns can be converted by galvanic or electroless copper deposition in structured metal layers

Rotational Symmetry Breaking in a Trigonal Superconductor Nb-doped Bi_{2}Se_{3}

Directory of Open Access Journals (Sweden)

Tomoya Asaba

2017-01-01

Full Text Available The search for unconventional superconductivity has been focused on materials with strong spin-orbit coupling and unique crystal lattices. Doped bismuth selenide (Bi_{2}Se_{3} is a strong candidate, given the topological insulator nature of the parent compound and its triangular lattice. The coupling between the physical properties in the superconducting state and its underlying crystal symmetry is a crucial test for unconventional superconductivity. In this paper, we report direct evidence that the superconducting magnetic response couples strongly to the underlying trigonal crystal symmetry in the recently discovered superconductor with trigonal crystal structure, niobium (Nb-doped Bi_{2}Se_{3}. As a result, the in-plane magnetic torque signal vanishes every 60°. More importantly, the superconducting hysteresis loop amplitude is enhanced along one preferred direction, spontaneously breaking the rotational symmetry. This observation indicates the presence of nematic order in the superconducting ground state of Nb-doped Bi_{2}Se_{3}.

Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

Directory of Open Access Journals (Sweden)

Smajo Sulejmanovic

2014-11-01

Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

Metal non-metal transitions in doped semiconductors

International Nuclear Information System (INIS)

Brezini, A.

1989-12-01

A disordered Hubbard model with diagonal disorder is used to examine the electron localization effects associated with both disorder and electron-electron interaction. Extensive results are reported on the ground state properties and compared with other theories. In particular two regimes are observed; when the electron-electron interaction U is greater than the disorder parameter and when is smaller. Furthermore the effect of including conduction-band minima into the calculation of metal-insulator transitions in doped Si and Ge is investigated with use of Berggren approach. Good agreement with experiments are found when both disorder and interactions are included. (author). 37 refs, 7 figs, 3 tabs

Atomically resolved spectroscopic study of Sr.sub.2./sub.IrO.sub.4./sub.: Experiment and theory

Czech Academy of Sciences Publication Activity Database

Li, Q.; Cao, G.; Okamoto, S.; Yi, J.; Lin, W.; Sales, B.C.; Yan, J.; Arita, R.; Kuneš, Jan; Kozhevnikov, A.V.; Eguiluz, A.G.; Imada, M.; Gai, Z.; Pan, M.; Mandrus, D.G.

2013-01-01

Roč. 3, OCT (2013), s. 1-7 ISSN 2045-2322 R&D Projects: GA ČR GA13-25251S Institutional support: RVO:68378271 Keywords : Sr 2 IrO 4 * scanning tunneling microscopy * Mott insulator * Slater insulator Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.078, year: 2013 http://www.nature.com/srep/2013/131029/srep03073/full/srep03073.html

Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures

International Nuclear Information System (INIS)

Laskar, J.; Kolodzey, J.; Ketterson, A.A.; Adesida, I.; Cho, A.Y.

1990-01-01

The authors present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Al 0.3 Ga 0.7 As metal insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation f max from 70 to 81 GHz and an increase in the unity current gain cutoff frequency f T from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the high-speed potential of doped channel MISFET's at both room temperature and cryogenic temperatures

A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques

International Nuclear Information System (INIS)

Yu-Feng, Guo; Zhi-Gong, Wang; Gene, Sheu; Jian-Bing, Cheng

2010-01-01

We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, two-dimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off- and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Pressure-induced changes in Cr3+-doped elpasolites and LiCaAlF6: Interpretation of macroscopic data

DEFF Research Database (Denmark)

Trueba, A. ,; García Lastra, Juan Maria; Aramburu, J. A.

2010-01-01

In the research of pressure effects on Cr3+-doped insulating lattices, it is crucial to understand the dependence of the 10Dq parameter on the sample volume, V. This problem is explored in the present work through ab initio calculations on Cr3+-doped K2NaScF6, Cs2NaYCl6, and Cs2NaYBr6 elpasolite...... dependence on V−m/3 for LiCaAlF6:Cr3+ where the measured exponent m=2.3 is seemingly anomalous when compared to the values found for ruby (m=4.5) or NiO (m=5)....

Self-Healing Wire Insulation

Science.gov (United States)

Parrish, Clyde F. (Inventor)

2012-01-01

A self-healing system for an insulation material initiates a self-repair process by rupturing a plurality of microcapsules disposed on the insulation material. When the plurality of microcapsules are ruptured, reactants within the plurality of microcapsules react to form a replacement polymer in a break of the insulation material. This self-healing system has the ability to repair multiple breaks in a length of insulation material without exhausting the repair properties of the material.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

Science.gov (United States)

Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Studies on charge transport in Al–doped La{sub 0.7}Ca{sub 0.3}Mn{sub 1−x}Al{sub x}O{sub 3} manganites

Energy Technology Data Exchange (ETDEWEB)

Rathod, Jalshikhaba S. [C.U. Shah Technical Institute of Diploma Studies, C.U. Shah University, Surendranagar 363030 (India); Keshvani, M.J. [B.H. Gardi College of Engineering and Technology, Rajkot 361162 (India); Department of Physics, Saurashtra University, Rajkot 360005 (India); Solanki, P.S.; Pandya, D.D.; Kataria, Bharat; Shah, N.A. [Department of Physics, Saurashtra University, Rajkot 360005 (India); Kuberkar, D.G., E-mail: dgkuberkar@gmail.com [Department of Physics, Saurashtra University, Rajkot 360005 (India)

2015-12-01

In this communication, we report the results of the studies on the effect of non-magnetic Al{sup 3+}-doping on structure and properties of La{sub 0.7}Ca{sub 0.3}Mn{sub 1−x}Al{sub x}O{sub 3} (LCMAO) manganites synthesized by conventional solid state reaction (SSR) route. The Rietveld refinement of the X-ray diffraction (XRD) data confirms the single phasic nature of the samples without any detectable impurities. All the samples exhibit metal to insulator transition (T{sub P}) which decrease with increase in Al{sup 3+} doping concentration while it increases with applied magnetic field. To understand the nature of charge transport in metallic and insulating regions of resistivity, various models and mechanisms have been used to fit the observed experimental data.

Quantum coherent transport in SnTe topological crystalline insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Assaf, B. A.; Heiman, D. [Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States); Katmis, F.; Moodera, J. S. [Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139 (United States); Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Wei, P. [Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Zhang, Z. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bennett, S. P.; Harris, V. G. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-09-08

Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

Ultrafast Dynamics in Vanadium Dioxide: Separating Spatially Segregated Mixed Phase Dynamics in the Time-domain

Science.gov (United States)

Hilton, David

2011-10-01

In correlated electronic systems, observed electronic and structural behavior results from the complex interplay between multiple, sometimes competing degrees-of- freedom. One such material used to study insulator-to-metal transitions is vanadium dioxide, which undergoes a phase transition from a monoclinic-insulating phase to a rutile-metallic phase when the sample is heated to 340 K. The major open question with this material is the relative influence of this structural phase transition (Peirels transition) and the effects of electronic correlations (Mott transition) on the observed insulator-to-metal transition. Answers to these major questions are complicated by vanadium dioxide's sensitivity to perturbations in the chemical structure in VO2. For example, related VxOy oxides with nearly a 2:1 ratio do not demonstrate the insulator-to- metal transition, while recent work has demonstrated that W:VO2 has demonstrated a tunable transition temperature controllable with tungsten doping. All of these preexisting results suggest that the observed electronic properties are exquisitely sensitive to the sample disorder. Using ultrafast spectroscopic techniques, it is now possible to impulsively excite this transition and investigate the photoinduced counterpart to this thermal phase transition in a strongly nonequilibrium regime. I will discuss our recent results studying the terahertz-frequency conductivity dynamics of this photoinduced phase transition in the poorly understood near threshold temperature range. We find a dramatic softening of the transition near the critical temperature, which results primarily from the mixed phase coexistence near the transition temperature. To directly study this mixed phase behavior, we directly study the nucleation and growth rates of the metallic phase in the parent insulator using non-degenerate optical pump-probe spectroscopy. These experiments measure, in the time- domain, the coexistent phase separation in VO2 (spatially

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

International Nuclear Information System (INIS)

Kadys, A.; Sudzius, M.; Jarasiunas, K.; Mao Luhong; Sun Niefeng

2006-01-01

Photoelectric properties of semi-insulating, differently doped, and undoped indium phosphide wafers, grown by the liquid encapsulation Czochralski method, have been investigated by time-resolved picosecond four-wave mixing technique. Deep defect related carrier generation, recombination, and transport properties were investigated experimentally by measuring four-wave mixing kinetics and exposure characteristics. The presence of deep donor states in undoped InP was confirmed by a pronounced effect of a space charge electric field to carrier transport. On the other hand, the recharging dynamics of electrically active residual impurities was observed in undoped and Fe-doped InP through the process of efficient trapping of excess carriers. The bipolar diffusion coefficients and mobilities were determined for the all wafers

Importance of space-time fluctuations and non-linearities for the transport inside insulating glasses; Importance des fluctuations spatio-temporelles et des non linearites pour le transport dans les verres isolants

Energy Technology Data Exchange (ETDEWEB)

Ladieu, F

2003-07-01

This work deals with transport in insulating glasses. In such solids, the discrete translational symmetry is lost, which means that the plane wave analysis is not a priori the right 'starting point'. As a result, the transport is more difficult to handle, and a huge amount of works have been devoted to many aspects of transport in disordered systems, especially since the seventies. Here we focus on three specific questions: (i) the heat transport in glasses submitted to micro-beams and the associated irreversible vaporization; (ii) the electronic d.c. transport, below 1 Kelvin, in Mott-Anderson insulators, i.e. in 'electron glasses' where both disorder and electron-electron interactions are relevant; (iii) the low frequency dielectric constant in 'structural glasses' (i.e. 'ordinary glasses') which, below 1 Kelvin, is both universal (i.e. independent on the chemical composition) and very different of that of crystals. For each topic, we present both original experiments and the new theoretical concepts that we have elaborated so as to understand the main experimental features. Eventually, it appears that, in any case, transport in insulating glasses is strongly dominated by quite a small part of the 'glass-applied field' ensemble and that the nonlinear response is a relevant tool to get informations on this 'sub-part' which dominates the transport in the whole system. (author)

Monte Carlo study of one hole in a quantum antiferromagnet

International Nuclear Information System (INIS)

Sorella, S.

1992-01-01

Using the standard Quantum Monte Carlo technique for the Hubbard model, I present here a numerical investigation of the hole propagation in a Quantum Antiferromagnet. The calculation is very well stabilized, using selected sized systems and special use of the trial wavefunction that satisfy the close shell condition in presence of an arbitrarily weak Zeeman magnetic field, vanishing in the thermodynamic limit. In this paper the author investigates the question of vanishing or nonvanishing quasiparticle weight, in order to clarify whether the Mott insulator should behave just as conventional insulator with an upper and lower Hubbard band. By comparing the present finite size scaling with several techniques predicting a finite quasiparticle weight the data seem more consistent with a vanishing quasiparticle weight, i.e., as recently suggested by P.W. Anderson the Hubbard-Mott insulator should be characterized by non-trivial excitations which cannot be interpreted in a simple quasi-particle picture. However it cannot be excluded, based only on numerical grounds, that a very small but non vanishing quasiparticle weight should survive in the thermodynamic limit

Heat insulation support device

International Nuclear Information System (INIS)

Takahashi, Hiroyuki; Koda, Tomokazu; Motojima, Osamu; Yamamoto, Junya.

1994-01-01

The device of the present invention comprises a plurality of heat insulation legs disposed in a circumferential direction. Each of the heat insulative support legs has a hollow shape, and comprises an outer column and an inner column as support structures having a heat insulative property (heat insulative structure), and a thermal anchor which absorbs compulsory displacement by a thin flat plate (displacement absorber). The outer column, the thermal anchor and the inner column are connected by a support so as to offset the positional change of objects to be supported due to shrinkage when they are shrunk. In addition, the portion between the superconductive coils as the objects to be supported and the inner column is connected by the support. The superconductive thermonuclear device is entirely contained in a heat insulative vacuum vessel, and the heat insulative support legs are disposed on a lower lid of the heat insulative vacuum vessel. With such a constitution, they are strengthened against lateral load and buckling, thereby enabling to reduce the amount of heat intrusion while keeping the compulsory displacement easy to be absorbed. (I.N.)

Fundamental models of electronic transport in amorphous semiconductors

International Nuclear Information System (INIS)

Emin, D.

1982-01-01

Significant fundamental questions lie at the heart of our understanding of the electronic and optical properties of semiconducting and insulating glasses. In this article the principal features of the Mott-CFO model and the small-polaron model are described. While the Mott-CFO model seems to apply to the high-mobility electron transport in glassy SiO 2 and Cd 2 As 3 it does not appear applicable to the most frequently studied chalocogenide glasses. Furthermore, the Mott-CFO model does not account for as basic a feature as the sign of the Hall effect. On the other hand, the small-polaron model accounts for the observed d.c. conductivity, Peltier heat and Hall mobility in a very simple and direct manner

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Science.gov (United States)

Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

2017-08-01

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Correlation of carrier localization with relaxation time distribution and electrical conductivity relaxation in silver-nanoparticle-embedded moderately doped polypyrrole nanostructures

Science.gov (United States)

Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

2014-02-01

The electrical conductivity relaxation in moderately doped polypyrrole and its nanocomposites reinforced with different proportion of silver nanoparticles was investigated in both frequency and time domain. An analytical distribution function of relaxation times is constructed from the results obtained in the frequency domain formalism and is used to evaluate the Kohlrausch-Williams-Watts (KWW) type decay function in the time domain. The thermal evolution of different relaxation parameters was analyzed. The temperature-dependent dc electrical conductivity, estimated from the average conductivity relaxation time is observed to depend strongly on the nanoparticle loading and follows Mott three-dimensional variable range hopping (VRH) conduction mechanism. The extent of charge carrier localization calculated from the VRH mechanism is well correlated to the evidences obtained from the structural characterizations of different nanostructured samples.

Economically optimal thermal insulation

Energy Technology Data Exchange (ETDEWEB)

Berber, J.

1978-10-01

Exemplary calculations to show that exact adherence to the demands of the thermal insulation ordinance does not lead to an optimal solution with regard to economics. This is independent of the mode of financing. Optimal thermal insulation exceeds the values given in the thermal insulation ordinance.

Panels of microporous insulation

Energy Technology Data Exchange (ETDEWEB)

McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.J.

1990-08-07

Microporous thermal insulation materials have a lattice structure in which the average interstitial dimension is less than the mean free path of the molecules of air or other gas in which the material is arranged. This results in a heat flow which is less than that attributable to the molecular heat diffusion of the gas. According to this invention, a method is provided for manufacturing panels of microporous thermal insulation, in particular such panels in which the insulation material is bonded to a substrate. The method comprises the steps of applying a film of polyvinyl acetate emulsion to a non-porous substrate, and compacting powdery microporous thermal insulation material against the film so as to cause the consolidated insulation material to bond to the substrate and form a panel. The polyvinyl acetate may be applied by brushing or spraying, and is preferably allowed to dry prior to compacting the insulation material. 1 fig.

Total dose hardening of buried insulator in implanted silicon-on-insulator structures

International Nuclear Information System (INIS)

Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

1987-01-01

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

Survey of thermal insulation systems

International Nuclear Information System (INIS)

Kinoshita, Izumi

1983-01-01

Better thermal insulations have been developed to meet the growing demands of industry, and studies on thermal insulation at both high temperature and low temperature have been widely performed. The purpose of this survey is to summarize data on the performances and characteristics of thermal insulation materials and thermal insulation structures (for instance, gas cooled reactors, space vehicles and LNG storage tanks), and to discuss ravious problems regarding the design of thermal insulation structures of pool-type LMFBRs. (author)

Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

Science.gov (United States)

Wang, Jingang; Chong, Junlong; Yang, Jie

2014-10-01

Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

Thermal insulation

International Nuclear Information System (INIS)

Pinsky, G.P.

1977-01-01

Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

Science.gov (United States)

Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

2011-04-21

Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

Wrapped Multilayer Insulation

Science.gov (United States)

Dye, Scott A.

2015-01-01

New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.

Theoretical Modeling of Various Spectroscopies for Cuprates and Topological Insulators

Science.gov (United States)

Basak, Susmita

structure, strong electron correlations (for cuprates) and spin-orbit coupling (for TIs) are included realistically in material-specific detail. Turning to the cuprates, in order to obtain a realistic description of various spectroscopies, one must include not only the effects of the matrix elements and the complexity of the crystal structure, but also of strong electronic correlations beyond the local density approximation (LDA)-based conventional picture, so that the physics of kinks, pseudogaps and superconductivity can be taken into account properly. In this connection, a self-consistent, intermediate coupling scheme informed by material-specific, first-principles band structures has been developed, where electron correlation effects beyond the LDA are incorporated via appropriate self-energy corrections to the electron and hole one-particle Green's functions. Here the antiferromagnetic (AFM) order is used as the simplest model of a competing order. A number of salient features of the resulting electronic spectrum and its energy, momentum and doping dependencies are in accord with experimental observations in electron as well as hole doped cuprates. This scheme thus provides a reasonable basis for undertaking a comprehensive, beyond-LDA level of modeling of various spectroscopies. The specific topics considered here are: (i) Origin of high-energy kink or the waterfall effect found in ARPES; (ii) Identification of the three energy scales observed in RIXS spectra as the pseudogap, charge transfer gap, and Mott gap; (iii) Evolution of the electron momentum densities with holedoping as seen in Compton scattering experiments. For three dimensional topological insulators, the ARPES and scanning tunneling microscopy (STM) spectra has been analyzed using a tight-binding model as well as a k · p model. The spin-orbit coupling, which is essential to produce the characteristic features of the surface states of a TI, is included realistically in the above models. In our

Electronic properties of high Tc superconductors

International Nuclear Information System (INIS)

Rojo, A.G.

1989-01-01

Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author) [es

Electronic properties of high Tc superconductors. Propiedades electronicas de los superconductores de alta temperatura critica

Energy Technology Data Exchange (ETDEWEB)

Rojo, A G

1989-01-01

Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author).

Magnetically self-insulated transformers

International Nuclear Information System (INIS)

Novac, B.M.; Smith, I.R.; Brown, J.

2002-01-01

Magnetic insulation is the only practicable form of insulation for much equipment used in ultrahigh pulsed-power work, including transmission lines and plasma opening switches. It has not however so far been successfully exploited in the transformers that are necessarily involved, and the first proposed design that appeared more than 30 years ago raised apparently insuperable problems. The two novel arrangements for a magnetically insulated transformer described in this paper overcome the problems faced by the earlier designs and also offer considerable scope for development in a number of important areas. Theoretical justification is given for their insulating properties, and this is confirmed by proof-of-principle results obtained from a small-scale experimental prototype in which magnetic insulation was demonstrated at up to 100 kV. (author)

Heavy fermions and superconductivity in doped cuprates

International Nuclear Information System (INIS)

Tornow, S.; Zevin, V.; Zwicknagl, G.

1996-01-01

We present a Fermi liquid description for the low-energy excitations in rare Earth cuprates Nd 2-x Ce x CuO 4 . The strongly renormalized heavy quasiparticles which appear in the doped samples originate from the coherent decoupling of rare earth spins and correlated conduction electrons. The correlations among the conduction electrons are simulated by assuming a spin density wave ground state. We discuss results for the thermodynamic properties in the insulating, normal metallic and superconducting phases which are in fair agreement with experimental data. In addition, the model predicts interesting behaviour for the superconducting state of samples with low transition temperature T c which may help to assess the validity of the underlying assumptions. (orig.)

Closure of the Mott gap and formation of a superthermal metal in the Fröhlich-type nonequilibrium polaron Bose-Einstein condensate in ${U}{{O}}_{2+x}$

Energy Technology Data Exchange (ETDEWEB)

Conradson, Steven D.; Andersson, David A.; Boland, Kevin S.; Bradley, Joseph A.; Byler, Darrin D.; Durakiewicz, Tomasz; Gilbertson, Steven M.; Kozimor, Stosh A.; Kvashnina, Kristina O.; Nordlund, Dennis; Rodriguez, George; Seidler, Gerald T.; Bagus, Paul S.; Butorin, Sergei M.; Conradson, Dylan R.; Espinosa-Faller, Francisco J.; Hess, Nancy J.; Kas, Joshua J.; Lezama-Pacheco, Juan S.; Martin, Philippe; Martucci, Mary B.; Rehr, John J.; Valdez, James A.; Bishop, Alan R.; Baldinozzi, Gianguido; Clark, David L.; Tayal, Akhil

2017-09-01

Mixed valence O-doped UO_2+x and photoexcited UO₂ containing transitory U³⁺ and U⁵⁺ host a coherent polaronic quantum phase (CPQP) that exhibits the characteristics of a Fröhlich-type, nonequilibrium, phonon-coupled Bose-Einstein condensate whose stability and coherence are amplified by collective, anharmonic motions of atoms and charges. Complementary to the available, detailed, real space information from scattering and EXAFS, an outstanding question is the electronic structure. Mapping the Mott gap in UO₂, U₄O₉, and U₃O₇ with O XAS and NIXS and UM5 RIXS shows that O doping raises the peak of the U5f states of the valence band by ~0.4 eV relative to a calculated value of 0.25 eV. However, it lowers the edge of the conduction band by 1.5 eV vs the calculated 0.6 eV, a difference much larger than the experimental error. This 1.9 eV reduction in the gap width constitutes most of the 2–2.2 eV gap measured by optical absorption. In addition, the XAS spectra show a tail that will intersect the occupied U5f states and give a continuous density-of-states that increases rapidly above its constricted intersection. Femtosecond-resolved photoemission measurements of UO₂, coincident with the excitation pulse with 4.7 eV excitation, show the unoccupied U5f states of UO₂ and no hot electrons. 3.1 eV excitation, however, complements the O-doping results by giving a continuous population of electrons for several eV above the Fermi level. The CPQP in photoexcited UO₂ therefore fulfills the criteria for a nonequilibrium condensate. The electron distributions resulting from both excitations persist for 5–10 ps, indicating that they are the final state that therefore forms without passing through the initial continuous distribution of nonthermal electrons observed for other materials. Three exceptional findings are: (1) the direct formation of both

Electronic structure and magnetic properties of Sc doped EuO thin films

Energy Technology Data Exchange (ETDEWEB)

Reisner, Andreas; Altendorf, Simone; Chang, Chun-Fu; Tjeng, Liu Hao [Max-Planck-Institute for Chemical Physics of Solids, Noethnitzer Str.40, 01187 Dresden (Germany); Lin, Hong-Ji; Chen, Chien-Te [National Synchrotron Radiation Research Center, Hsin-Ann Road, 30076 Hsinchu, Taiwan (China)

2013-07-01

Europium monoxide is a ferromagnetic semiconductor with a Curie temperature T{sub C} of 69 K. Upon doping the material can show an increase of the Curie temperature, a metal-to-insulator transition and a high spin polarization of the charge carriers. Applying pressure can also enhance T{sub C}. Mostly other trivalent rare earth metals are used as dopant. Here we set out to explore the possibility of using transition metals as dopants. As a start we focus on the non magnetic Sc ions. We are able to achieve excellent crystalline growth of Sc-doped EuO thin films on YSZ (001) substrates using molecular beam epitaxy. We report our results on the crystal structure as characterized by RHEED and LEED, the electronic structure as determined by XPS and ARPES, and on the magnetic properties as measured by SQUID.

Research on vacuum insulation for cryocables

International Nuclear Information System (INIS)

Graneau, P.

1974-01-01

Vacuum insulation, as compared with solid insulation, simplifies the construction of both resistive or superconducting cryogenic cables. The common vacuum space in the cable can furnish thermal insulation between the environment and the cryogenic coolant, provide electrical insulation between conductors, and establish thermal isolation between go- and return-coolant streams. The differences between solid and vacuum high voltage insulation are discussed, and research on the design, materials selection, and testing of vacuum insulated cryogenic cables is described

Sound Insulation between Dwellings

DEFF Research Database (Denmark)

Rasmussen, Birgit

2011-01-01

Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

International Nuclear Information System (INIS)

Kuriyama, K.; Sakai, K.; Okada, M.

1996-01-01

Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge Ga and Se As ) approaches ∼8x10 16 cm -3 , the LO-phonon endash plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degree C. copyright 1996 The American Physical Society

Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

Science.gov (United States)

Coleman, Christopher; Bhattacharyya, Somnath

2017-11-01

The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

International Nuclear Information System (INIS)

Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

2011-01-01

In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

Electrical insulating liquid: A review

Directory of Open Access Journals (Sweden)

Deba Kumar Mahanta

2017-08-01

Full Text Available Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.

Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

Science.gov (United States)

Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

2018-05-16

In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

Biodegradation performance of environmentally-friendly insulating oil

Science.gov (United States)

Yang, Jun; He, Yan; Cai, Shengwei; Chen, Cheng; Wen, Gang; Wang, Feipeng; Fan, Fan; Wan, Chunxiang; Wu, Liya; Liu, Ruitong

2018-02-01

In this paper, biodegradation performance of rapeseed insulating oil (RDB) and FR3 insulating oil (FR3) was studied by means of ready biodegradation method which was performed with Organization for Economic Co-operation and Development (OECD) 301B. For comparison, the biodegradation behaviour of 25# mineral insulating oil was also characterized with the same method. The testing results shown that the biodegradation degree of rapeseed insulating oil, FR3 insulating oil and 25# mineral insulating oil was 95.8%, 98.9% and 38.4% respectively. Following the “new chemical risk assessment guidelines” (HJ/T 154 - 2004), which illustrates the methods used to identify and assess the process safety hazards inherent. The guidelines can draw that the two vegetable insulating oils, i.e. rapeseed insulating oil and FR3 insulating oil are easily biodegradable. Therefore, the both can be classified as environmentally-friendly insulating oil. As expected, 25# mineral insulating oil is hardly biodegradable. The main reason is that 25# mineral insulating oil consists of isoalkanes, cyclanes and a few arenes, which has few unsaturated bonds. Biodegradation of rapeseed insulating oil and FR3 insulating oil also remain some difference. Biodegradation mechanism of vegetable insulating oil was revealed from the perspective of hydrolysis kinetics.

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

International Nuclear Information System (INIS)

Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

2008-01-01

Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

Photoconductivity properties of {delta}-Si doped InGaAs quantum well

Energy Technology Data Exchange (ETDEWEB)

Campo, Junior, V Leira; Marega, Junior, E; Rossi, J C; Lubyshev, D I; Gonzalez Borrero, P P; Basmaji, P [Sao Paulo Univ., Sao Carlos, SP (Brazil). Inst. de Fisica

1996-12-31

Full text. The semiconductors thin films with doping level near Anderson transition have high photo sensitivity in the photo conductivity regime. The maximum sensitivity of these photodetectors occurs under illumination when the system transform from semi-insulating to semi-metal. The ratio between deep and shallow levels concentration in this case should be near the unity with a total impurity concentration near 10{sup 15} cm{sup -3}, that difficult to control at the bulk doping. The frequency response in these devices are limited by absorption thickness ({approx}500-300 nm). In present work we report the results of visible-infrared photo detector (PD) preparation by using molecular beam epitaxy. For development of frequency response and wavelength range increase to infrared area we use {delta}-doped In{sub 0.2} Ga{sub 0.8} As quantum well. The doping level in {delta}-Si layer on the middle of QW was 2 x 10{sup 12} cm{sup -3}, that was enough for shift of deep levels-shallow levels concentration ratio to anderson transition in the area near QW. At the illumination all photoexcited carriers was collected by QW. The deepness of photo sensitivity space area is limiters by few nanometers near the QW, that increase the frequency properties of PD. Photo current spectra show high sensibility ({Delta}) (R/R=15%) at cut-off frequency up 1.25 eV. This explain strong optical absorption by QW in the infrared area. The future work will focalized on introducing {delta}-doped In Ga As superlattice for linearization of PD spectrum characteristics. (author)

Gas insulated substations

CERN Document Server

2014-01-01

This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

Transparent conductive Ga-doped ZnO films fabricated by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Behrends, Arne; Wagner, Alexander; Al-Suleiman, Mohamed Aid Mansur; Waag, Andreas; Bakin, Andrey [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Lugauer, Hans-Juergen; Strassburg, Martin; Walter, Robert; Weimar, Andreas [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

2012-04-15

Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. In this work we report on a ''soft'' method for the fabrication of ZnO films as TCO layers by using metal organic chemical vapor deposition (MOCVD) at particularly low temperatures. The MOCVD approach has been studied focusing on the TCO key issues: fabrication temperature, morphology, optical, and electrical properties. Very smooth ZnO films with rms values down to 0.8 nm were fabricated at a substrate temperature of only 300 C. Ga-doping is well controllable even for high carrier concentrations up to 2 x 10{sup 20} cm{sup -3}, which is above the Mott-density leading to metallic-like behavior of the films. Furthermore all films show excellent optical transparency in the visible spectral range. As a consequence, our MOCVD approach is well suited for the soft fabrication of ZnO-based TCO layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Intersite Coulomb interaction and Heisenberg exchange

NARCIS (Netherlands)

Eder, R; van den Brink, J.; Sawatzky, G.A

1996-01-01

Based on exact diagonalization results for small clusters we discuss the effect of intersite Coulomb repulsion in Mott-Hubbard or charge transfers insulators. Whereas the exchange constant J for direct exchange is enhanced by intersite Coulomb interaction, that for superexchange is suppressed. The

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

International Nuclear Information System (INIS)

Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

2016-01-01

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Insulation structure of thermonuclear device

International Nuclear Information System (INIS)

Suzuki, Takayuki; Usami, Saburo; Tsukamoto, Hideo; Kikuchi, Mitsuru

1998-01-01

The present invention provides an insulating structure of a thermonuclear device, in which insulation materials between toroidal coils are not broken even if superconductive toroidal coils are used. Namely, a tokamak type thermonuclear device of an insulating structure type comprises superconductive toroidal coils for confining plasmas arranged in a circular shape directing the center each at a predetermined angle, and the toroidal coils are insulated from each other. The insulation materials are formed by using a biaxially oriented fiber reinforced plastics. The contact surface of the toroidal coils and the insulating materials are arranged so that they are contact at a woven surface of the fiber reinforced plastics. Either or both of the contact surfaces of the fiber reinforced plastics and the toroidal coils are coated with a high molecular compound having a low friction coefficient. With such a constitution, since the interlayer shearing strength of the biaxially oriented fiber reinforced plastics is about 1/10 of the compression strength, the shearing stress exerted on the insulation material is reduced. Since a static friction coefficient on the contact surface is reduced to provide a structure causing slipping, shearing stress does not exceeds a predetermined limit. As a result, breakage of the insulation materials between the toroidal coils can be prevented. (I.S.)

Low emissivity insulating glazing materials: principle and examples; Les vitrages isolants a basse emissivite: principe et exemples

Energy Technology Data Exchange (ETDEWEB)