n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

International Nuclear Information System (INIS)

Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

2007-01-01

The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

Surface structuring of boron doped CVD diamond by micro electrical discharge machining

Science.gov (United States)

Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

2018-05-01

Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

International Nuclear Information System (INIS)

Zhao, Y.; Ke, C.; Cheng, C.H.; Feng, Y.; Yang, Y.; Munroe, P.

2010-01-01

Nano-diamond and titanium concurrently doped MgB 2 nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J c -H behavior and pinning force scaling features of MgB 2 have been investigated. Although T c was slightly depressed, J c of MgB 2 have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB 2 , a unique nanocomposite in which TiB 2 forms a thin layer surrounding MgB 2 grains whereas nano-diamond particles were wrapped inside the MgB 2 grains. Besides, nano-diamond doping results in a high density stress field in the MgB 2 samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB 2 system.

Electrical characterization of 10B doped diamond irradiated with low thermal neutron fluence

International Nuclear Information System (INIS)

Reed, M.L.; Reed, M.J.; Jagannadham, K.; Verghese, K.; Bedair, S.M.; El-Masry, N.; Butler, J.E.

2004-01-01

A sample of 10 B isotope doped diamond was neutron irradiated to a thermal fluence of 1.3x10 19 neutron cm -2 . The diamond sample was cooled continuously during irradiation in a nuclear reactor. 7 Li is formed by nuclear transmutation reaction from 10 B. Characterization for electrical conductance in the temperature range of 160 K 10 B doped sample and the 10 B doped and irradiated sample. The unirradiated diamond sample showed p-type conductance at higher temperature (T>200 K) and p-type surface conductance at lower temperature (T 7 Li that is formed by nuclear transmutation reaction from 10 B atoms. Also, compensation of n-type carriers from 7 Li by p-type carriers from 10 B is used to interpret the conductance above 400 K. A low concentration of radiation induced defects, absence of defect complexes, and the low activation energy of n-type 7 Li are thought responsible for the observed variation of conductance in the irradiated diamond. The present results illustrate that neutron transmutation from 10 B doped diamond is a useful method to achieve n-type conductivity in diamond

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications.

Science.gov (United States)

Luong, John H T; Male, Keith B; Glennon, Jeremy D

2009-10-01

In recent years, conductive diamond electrodes for electrochemical applications have been a major focus of research and development. The impetus behind such endeavors could be attributed to their wide potential window, low background current, chemical inertness, and mechanical durability. Several analytes can be oxidized by conducting diamond compared to other carbon-based materials before the breakdown of water in aqueous electrolytes. This is important for detecting and/or identifying species in solution since oxygen and hydrogen evolution do not interfere with the analysis. Thus, conductive diamond electrodes take electrochemical detection into new areas and extend their usefulness to analytes which are not feasible with conventional electrode materials. Different types of diamond electrodes, polycrystalline, microcrystalline, nanocrystalline and ultrananocrystalline, have been synthesized and characterized. Of particular interest is the synthesis of boron-doped diamond (BDD) films by chemical vapor deposition on various substrates. In the tetrahedral diamond lattice, each carbon atom is covalently bonded to its neighbors forming an extremely robust crystalline structure. Some carbon atoms in the lattice are substituted with boron to provide electrical conductivity. Modification strategies of doped diamond electrodes with metallic nanoparticles and/or electropolymerized films are of importance to impart novel characteristics or to improve the performance of diamond electrodes. Biofunctionalization of diamond films is also feasible to foster several useful bioanalytical applications. A plethora of opportunities for nanoscale analytical devices based on conducting diamond is anticipated in the very near future.

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Ke, C. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Feng, Y. [Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xian, Shaanxi 710016 (China); Western Superconductivity Technology Company, Xian (China); Yang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Munroe, P. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

2010-11-01

Nano-diamond and titanium concurrently doped MgB{sub 2} nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J{sub c}-H behavior and pinning force scaling features of MgB{sub 2} have been investigated. Although T{sub c} was slightly depressed, J{sub c} of MgB{sub 2} have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J{sub c} value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB{sub 2}, a unique nanocomposite in which TiB{sub 2} forms a thin layer surrounding MgB{sub 2} grains whereas nano-diamond particles were wrapped inside the MgB{sub 2} grains. Besides, nano-diamond doping results in a high density stress field in the MgB{sub 2} samples, which may take responsibility for the {Delta}{kappa} pinning behavior in the carbon-doped MgB{sub 2} system.

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

International Nuclear Information System (INIS)

Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

2015-01-01

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

Energy Technology Data Exchange (ETDEWEB)

Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

2015-04-15

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

Anodic oxidation with doped diamond electrodes: a new advanced oxidation process

International Nuclear Information System (INIS)

Kraft, Alexander; Stadelmann, Manuela; Blaschke, Manfred

2003-01-01

Boron-doped diamond anodes allow to directly produce OH· radicals from water electrolysis with very high current efficiencies. This has been explained by the very high overvoltage for oxygen production and many other anodic electrode processes on diamond anodes. Additionally, the boron-doped diamond electrodes exhibit a high mechanical and chemical stability. Anodic oxidation with diamond anodes is a new advanced oxidation process (AOP) with many advantages compared to other known chemical and photochemical AOPs. The present work reports on the use of diamond anodes for the chemical oxygen demand (COD) removal from several industrial wastewaters and from two synthetic wastewaters with malic acid and ethylenediaminetetraacetic (EDTA) acid. Current efficiencies for the COD removal between 85 and 100% have been found. The formation and subsequent removal of by-products of the COD oxidation has been investigated for the first time. Economical considerations of this new AOP are included

Nanopores creation in boron and nitrogen doped polycrystalline graphene: A molecular dynamics study

Science.gov (United States)

Izadifar, Mohammadreza; Abadi, Rouzbeh; Nezhad Shirazi, Ali Hossein; Alajlan, Naif; Rabczuk, Timon

2018-05-01

In the present paper, molecular dynamic simulations have been conducted to investigate the nanopores creation on 10% of boron and nitrogen doped polycrystalline graphene by silicon and diamond nanoclusters. Two types of nanoclusters based on silicon and diamond are used to investigate their effect for the fabrication of nanopores. Therefore, three different diameter sizes of the clusters with five kinetic energies of 10, 50, 100, 300 and 500 eV/atom at four different locations in boron or nitrogen doped polycrystalline graphene nanosheets have been perused. We also study the effect of 3% and 6% of boron doped polycrystalline graphene with the best outcome from 10% of doping. Our results reveal that the diamond cluster with diameter of 2 and 2.5 nm fabricates the largest nanopore areas on boron and nitrogen doped polycrystalline graphene, respectively. Furthermore, the kinetic energies of 10 and 50 eV/atom can not fabricate nanopores in some cases for silicon and diamond clusters on boron doped polycrystalline graphene nanosheets. On the other hand, silicon and diamond clusters fabricate nanopores for all locations and all tested energies on nitrogen doped polycrystalline graphene. The area sizes of nanopores fabricated by silicon and diamond clusters with diameter of 2 and 2.5 nm are close to the actual area size of the related clusters for the kinetic energy of 300 eV/atom in all locations on boron doped polycrystalline graphene. The maximum area and the average maximum area of nanopores are fabricated by the kinetic energy of 500 eV/atom inside the grain boundary at the center of the nanosheet and in the corner of nanosheet with diameters of 2 and 3 nm for silicon and diamond clusters on boron and nitrogen doped polycrystalline graphene.

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Directory of Open Access Journals (Sweden)

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

2006-01-01

Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

Characterization of boron doped nanocrystalline diamonds

International Nuclear Information System (INIS)

Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

2008-01-01

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

International Nuclear Information System (INIS)

Kavan, Ladislav; Vlckova Zivcova, Zuzana; Petrak, Vaclav; Frank, Otakar; Janda, Pavel; Tarabkova, Hana; Nesladek, Milos; Mortet, Vincent

2015-01-01

Highlights: • B-doped diamond is nanostructured by corrosion-driven modifications occurring at carbonaceous impurity sites (sp 2 -carbons). • The electrochemical oxidation partly transforms a hydrogen-terminated diamond surface to O-terminated one, but the electrocatalytic activity of plasmatically O-terminated diamond is not achieved. • In contrast to all usual sp 2 carbons, the Raman spectra of B-doped diamond electrodes do not change upon electrochemical charging/discharging. - Abstract: Comparative studies of boron-doped diamonds electrodes (polycrystalline, single-crystalline, H-/O-terminated, and with different sp 3 /sp 2 ratios) indicate morphological modifications of diamond which are initiated by corrosion at nanoscale. In-situ electrochemical AFM imaging evidences that the textural changes start at non-diamond carbonaceous impurity sites treated at high positive potentials (>2.2 V vs. Ag/AgCl). The primary perturbations subsequently develop into sub-micron-sized craters. Raman spectroscopy shows that the primary erosion site is graphite-like (sp 2 -carbon), which is preferentially removed by anodic oxidation. Other non-diamond impurity, viz. tetrahedral amorphous carbon (t-aC), is less sensitive to oxidative decomposition. The diamond-related Raman features, including the B-doping-assigned modes, are intact during reversible electrochemical charging/discharging, which is a salient difference from all usual sp 2 -carbons. The electrochemical oxidation partly transforms a hydrogen-terminated diamond surface to O-terminated one, but the electrocatalytic activity of plasmatically O-terminated diamond is not achieved for a model redox couple, Fe 3+/2+ . Electrochemical impedance spectra were fitted to six different equivalent circuits. The determination of acceptor concentrations is feasible even for highly-doped diamond electrodes.

Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

International Nuclear Information System (INIS)

Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

2008-01-01

It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

Science.gov (United States)

Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

2018-06-01

Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

International Nuclear Information System (INIS)

Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

2011-01-01

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

Synthetic diamond in electrochemistry

International Nuclear Information System (INIS)

Pleskov, Yurii V

1999-01-01

The results of studies on the electrochemistry of diamond carried out during the last decade are reviewed. Methods for the preparation, the crystalline structure and the main electrophysical properties of diamond thin films are considered. Depending on the doping conditions, the diamond behaves as a superwide-gap semiconductor or as a semimetal. It is shown that the 'metal-like' diamond is corrosion-resistant and can be used advantageously as an electrode in the electrosynthesis (in particular, for the electroreduction of compounds that are difficult to reduce) and electroanalysis. Kinetic characteristics of some redox reactions and the impedance parameters for diamond electrodes are presented. The results of comparative studies of the electrodes made of diamond single crystals, polycrystalline diamond and amorphous diamond-like carbon, which reveal the effect of the crystalline structure (e.g., the influence of intercrystallite boundaries) on the electrochemical properties of diamond, are presented. The bibliography includes 99 references.

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

Energy Technology Data Exchange (ETDEWEB)

Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

2005-08-01

Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2009-01-01

Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

Science.gov (United States)

Ullah, Mahtab; Ahmed, Ejaz; Hussain, Fayyaz; Rana, Anwar Manzoor; Raza, Rizwan

2015-04-01

Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B-C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B-C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is noted that charge distribution decreased from +1.89 to -1.90 eV whereas bond length reduced by 0.04 Å with increasing boron content in diamond films. These theoretical results support our earlier experimental findings on B-doped diamond polycrystalline films which depict that the addition of boron atoms to diamond films gives a sudden fall in resistivity even up to 105 Ω cm making it a good semiconductor for its applications in electrical devices.

Comparison between nano-diamond and carbon nanotube doping effects on critical current density and flux pinning in MgB2

International Nuclear Information System (INIS)

Cheng, C H; Yang, Y; Munroe, P; Zhao, Y

2007-01-01

Doping effects of nano-diamond and carbon nanotubes (CNTs) on critical current density of bulk MgB 2 have been studied. CNTs are found prone to be doped into the MgB 2 lattice whereas nano-diamond tends to form second-phase inclusions in the MgB 2 matrix, leading to a more significant improvement of J c (H) by doping by nano-diamond than by CNTs in MgB 2 . TEM reveals tightly packed MgB 2 nanograins (50-100 nm) with a dense distribution of diamond nanoparticles (10-20 nm) inside MgB 2 grains in nano-diamond-doped samples. Such a unique microstructure leads to a flux pinning behaviour different from that in CNTs-doped MgB 2

N-type doped nano-diamond in a first MEMS application

Energy Technology Data Exchange (ETDEWEB)

Dipalo, M.; Kusterer, J.; Janischowsky, K.; Kohn, E. [Dept. of Electron Devices and Circuits, University of Ulm, Albert Einstein Allee 45, 89081 Ulm (Germany)

2006-09-15

Nanocrystalline diamond is an interesting material for MEMS applications especially due to its outstanding mechanical, electrical and electrochemical properties. The current choice for doping is boron, resulting in p-type conduction. It has two difficulties: firstly, at high concentration (as needed for full activation) the lattice becomes highly stressed and may degrade the material's quality. Secondly, it contaminates the growth chamber, resulting in a memory effect. A recent alternative is n-type nitrogen doping, avoiding these disadvantages. However, nitrogen is mainly incorporated in the grain boundaries and thus inhomogeneously distributed. In turn this may limit the material's stability. Here we present a first trial to use nitrogen-doped nanocrystalline diamond (NCD), grown by hot filament CVD, in a water microjet as heater element. No stability problems were encountered even at high overdrive power. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electronic structure of B-doped diamond: A first-principles study

Directory of Open Access Journals (Sweden)

T. Oguchi

2006-01-01

Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

Laser spectroscopy of highly doped NV- centers in diamond

Science.gov (United States)

Subedi, Shova D.; Fedorov, Vladimir V.; Peppers, Jeremy; Martyshkin, Dmitry V.; Mirov, Sergey B.; Shao, Linbo; Loncar, Marko

2018-02-01

In this paper, prospects of using diamond with NV- centers as a gain medium have been studied. Spectroscopic characterization of NV- centers in diamond as well as absorption saturation and pump-probe experiments have been carried out. Absorption and emission cross-sections were estimated to be 2.8 × 10-17 cm2 and 4.3 × 10-17 cm2 at the maximum of absorption and emission bands, respectively. It was observed from emission spectra under pulse excitation that some NV- are photoionized to NV0 centers with ZPL at 575 nm. Room temperature luminescence lifetime of NV- centers was measured to be 12ns, which is close to the previously reported lifetime in bulk diamond ( 13ns). Saturated transmission was only about 11% of calculated values even at energy fluence much higher than the saturation flux. Two excited state absorptions (ESAs) with different relaxation times ("fast-decay" and "slow-decay with relaxation times of 500 ns and several tens of microseconds, respectively) were revealed in transmission decay kinetics at 632 nm. Kinetics of transmission at 670 nm was dominated by "slow-decay" ESA process. Kinetics of dk/k0 in shorter wavelength were strongly dominated by "fast-decay" ESA process. These results definitively indicate that stimulated emission of NV- centers is suppressed by photoionization and ESAs and the possibility of diamond lasers based on NV- centers is low.

Boron-doped nanocrystalline diamond electrodes for neural interfaces: in vivo biocompatibility evaluation

Czech Academy of Sciences Publication Activity Database

Alcaide, M.; Taylor, Andrew; Fjorback, M.; Zachar, V.; Pennisi, C.P.

2016-01-01

Roč. 10, Mar (2016), 1-9, č. článku 87. ISSN 1662-453X Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * neuroprosthetic interfaces * neural electrodes * boron-doped diamond * titanium nitride * foreign body reaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.566, year: 2016

Electrochemical degradation of chlorobenzene on boron-doped diamond and platinum electrodes

International Nuclear Information System (INIS)

Liu Lei; Zhao Guohua; Wu Meifen; Lei Yanzhu; Geng Rong

2009-01-01

In this paper the electrochemical degradation of chlorobenzene (CB) was investigated on boron-doped diamond (BDD) and platinum (Pt) anodes, and the degradation kinetics on these two electrodes was compared. Compared with the total mineralization with a total organic carbon (TOC) removal of 85.2% in 6 h on Pt electrode, the TOC removal reached 94.3% on BDD electrode under the same operate condition. Accordingly, the mineralization current efficiency (MCE) during the mineralization on BDD electrode was higher than that on the Pt electrode. Besides TOC, the conversion of CB, the productions and decay of intermediates were also monitored. Kinetic study indicated that the decay of CB on BDD and Pt electrodes were both pseudo-first-order reactions, and the reaction rate constant (k s ) on BDD electrode was higher than that on Pt electrode. The different reaction mechanisms on the two electrodes were investigated by the variation of intermediates concentrations. Two different reaction pathways for the degradation of CB on BDD electrode and Pt electrode involving all these intermediates were proposed.

Electron field emission from boron doped microcrystalline diamond

International Nuclear Information System (INIS)

Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

2007-01-01

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

Morphological and electrochemical properties of boron-doped diamond films on carbon cloths with enhanced surface area

International Nuclear Information System (INIS)

Silva, L.L.G.; Ferreira, N.G.; Corat, E.J.

2008-01-01

The electrochemical properties of doped diamond electrodes (10 17 -10 19 B cm -3 ) grown on carbon fiber cloths in H 2 SO 4 0.1 mol L -1 electrolyte were investigated. Cyclic voltammograms of B-doped diamond/carbon fiber cloth and carbon fiber cloth electrodes showed that both kinds of electrodes possess similar working potential windows of about 2.0 V. The electrode capacitance was determined by impedance spectroscopy and chronopotentiometry measurements and very close values were obtained. The capacitance values of the diamond film on carbon fiber cloths were 180 times higher than the ones of diamond films on Si. In this paper we have also discussed the capacitance frequency dependence of diamond/carbon cloth electrodes

OSL and TL dosimeter characterization of boron doped CVD diamond films

Science.gov (United States)

Gonçalves, J. A. N.; Sandonato, G. M.; Meléndrez, R.; Chernov, V.; Pedroza-Montero, M.; De la Rosa, E.; Rodríguez, R. A.; Salas, P.; Barboza-Flores, M.

2005-04-01

Natural diamond is an exceptional prospect for clinical radiation dosimetry due to its tissue-equivalence properties and being chemically inert. The use of diamond in radiation dosimetry has been halted by the high market price; although recently the capability of growing high quality CVD diamond has renewed the interest in using diamond films as radiation dosimeters. In the present work we have characterized the dosimetric properties of diamond films synthesized by the HFCVD method. The thermoluminescence and the optically stimulated luminescence of beta exposed diamond sample containing a B/C 4000 ppm doping presents excellent properties suitable for dosimetric applications with β-ray doses up to 3.0 kGy. The observed OSL and TL performance is reasonable appropriate to justify further investigation of diamond films as dosimeters for ionizing radiation, specially in the radiotherapy field where very well localized and in vivo and real time radiation dose applications are essential.

Electrochemical treatment of wastewaters containing 4-chlororesorcinol using boron doped diamond anodes

International Nuclear Information System (INIS)

Nasr, B.; Abdelatif, G.

2009-01-01

The electrochemical oxidation of aqueous wastes polluted with 4-chlororesorcinol has been studied on boron-doped diamond electrodes on acidic medium. The voltammetric results showed that in the potential region where the supporting electrolyte is stable, reactions occur, resulting in the loss of activity due to electrode fouling. Galvanostatic electrolysis study showed that the oxidation of these wastes in single-compartment electrochemical flow cell with boron doped diamond anodes deal to the complete mineralization of the organics but is no indication of electrode fouling. Resorcinol, 1,2,4-trihydroxybenzene, benzoquinone, maleic, fumaric, and oxalic acids have been detected as soluble organics and chlorides (Cl - ) and hypochlorites (ClO - ) as mineral products during the electrolysis of 4-chlororesorcinol. The electrochemical oxidation of 4-chlororesorcinol consists of a sequence of steps: Release of Cl and/or hydroxylation of the aromatic ring; formation of quinonic compounds; oxidative opening of aromatic ring to form carboxylic acids; and oxidation of carboxylic acids to carbon dioxide. Both, direct oxidation at boron doped diamond surface and mediated oxidation by powerful oxidants electrogenerated from electrolyte oxidation at anode surface are involved in these stages. (author)

Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

Science.gov (United States)

Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

2018-05-01

Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

Enhanced surface transfer doping of diamond by V{sub 2}O{sub 5} with improved thermal stability

Energy Technology Data Exchange (ETDEWEB)

Crawford, Kevin G., E-mail: k.crawford.2@research.gla.ac.uk; Moran, David A. J. [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Cao, Liang [High Magnetic Field Laboratory, Chinese Academy of Sciences, 350 Shushanhu Road, Hefei 230031, Anhui (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore); Qi, Dongchen, E-mail: d.qi@latrobe.edu.au [Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086 (Australia); Tallaire, Alexandre [LSPM-CNRS, Université Paris 13, Villetaneuse 93430 (France); Limiti, E.; Verona, C. [Department of Industrial Engineering, “Tor Vergata” University, Rome 00173 (Italy); Wee, Andrew T. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore)

2016-01-25

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V{sub 2}O{sub 5} as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V{sub 2}O{sub 5} as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V{sub 2}O{sub 5} deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 10{sup 12} to 1.8 × 10{sup 13 }cm{sup −2} at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V{sub 2}O{sub 5} in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V{sub 2}O{sub 5} is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.

Metallization and superconductivity in a multizone doped semiconductor: boron-doped diamond

International Nuclear Information System (INIS)

Loktev, V.M.; Pogorelov, Yu.G.

2005-01-01

Within the framework of Anderson's s - d hybride model, metallization of a semiconductor at collectivization of impurity states is discussed. Taking in mind the description of boron-doped diamond CB x , the model is generalized for the case of the multiband initial spectrum and cluster acceptor states, due to the pairs of the nearest neighbor impurities ('impurity dumbbells'). The parameters of the calculated band of collective impurity states are compared to those observed in metallized and superconducting CB x

The Immunosuppressive drug – Rapamycin – Electroanalytical Sensing Using Boron- Doped Diamond electrode

International Nuclear Information System (INIS)

Stanković, Dalibor M.; Kalcher, Kurt

2015-01-01

Graphical abstract: Display Omitted -- Abstract: This paper presents for the first time the study of electrochemical behavior of well known immunosuppressant drug – rapamycin (sirolimus) using boron-doped diamond electrode. Rapamycin provided single and oval-shaped oxidation peak at +1.1 V vs. Ag/AgCl electrode in Britton–Robinson buffer solution at pH 3 confirming highly irreversible behavior of analyte at boron-doped diamond electrode. A differential pulse voltammetry was used for quantification of tested drug under the optimum experimental conditions. The calibration curve was linear over the range from 0.5 to 19.5 μM (R 2 = 0.9976) with detection limit of 0.22 μM. Repeatability of ten successfully measurements of three different concentrations (5, 10 and 15 μM) was 2.5, 1.9 and 1,7 %, respectively. Influence of most common biomolecules presented in urine samples was evaluated. The suggested analytical methodology was successfully applied for determination of rapamycin in four urine samples with excellent recoveries. The developed approach could be beneficial in analysis of rapamycin in biological samples using boron-doped diamond electrode as up-to-date electrochemical sensor and could represent inexpensive analytical alternative to separation methods

Electrochemical mineralization pathway of quinoline by boron-doped diamond anodes.

Science.gov (United States)

Wang, Chunrong; Ma, Keke; Wu, Tingting; Ye, Min; Tan, Peng; Yan, Kecheng

2016-04-01

Boron-doped diamond anodes were selected for quinoline mineralization, and the resulting intermediates, phenylpropyl aldehyde, phenylpropionic acid, and nonanal were identified and followed during quinoline oxidation by gas chromatography-mass spectrometry and high-performance liquid chromatography. The evolutions of formic acid, acetic acid, oxalic acid, NO2(-), NO3(-), and NH4(+) were quantified. A new reaction pathway for quinoline mineralization by boron-doped diamond anodes has been proposed, where the pyridine ring in quinoline is cleaved by a hydroxyl radical giving phenylpropyl aldehyde and NH4(+). Phenylpropyl aldehyde is quickly oxidized into phenylpropionic acid, and the benzene ring is cleaved giving nonanal. This is further oxidized to formic acid, acetic acid, and oxalic acid. Finally, these organic intermediates are mineralized to CO2 and H2O. NH4(+) is also oxidized to NO2(-) and on to NO3(-). The results will help to gain basic reference for clearing intermediates and their toxicity. Copyright © 2016 Elsevier Ltd. All rights reserved.

Doping and cluster formation in diamond

KAUST Repository

Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

2011-01-01

Introducing a cluster formation model, we provide a rational fundamental viewpoint for the difficulty to achieve n-type dopeddiamond. We argue that codoping is the way forward to form appropriately doped shallow regions in diamond and other forms of carbon such as graphene. The electronegativities of the codopants are an important design criterion for the donor atom to efficiently donate its electron. We propose that the nearest neighbour codopants should be of a considerably higher electronegativity compared to the donor atom. Codoping strategies should focus on phosphorous for which there are a number of appropriate codopants.

Doping and cluster formation in diamond

KAUST Repository

Schwingenschlögl, Udo

2011-09-09

Introducing a cluster formation model, we provide a rational fundamental viewpoint for the difficulty to achieve n-type dopeddiamond. We argue that codoping is the way forward to form appropriately doped shallow regions in diamond and other forms of carbon such as graphene. The electronegativities of the codopants are an important design criterion for the donor atom to efficiently donate its electron. We propose that the nearest neighbour codopants should be of a considerably higher electronegativity compared to the donor atom. Codoping strategies should focus on phosphorous for which there are a number of appropriate codopants.

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

Energy Technology Data Exchange (ETDEWEB)

Achatz, Philipp

2009-05-15

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

International Nuclear Information System (INIS)

Achatz, Philipp

2009-01-01

During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.

2017-07-15

Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very

Sequential Electrodeposition of Platinum-Ruthenium at Boron-Doped Diamond Electrodes for Methanol Oxidation

Directory of Open Access Journals (Sweden)

Ileana González-González

2011-01-01

Full Text Available Sequential electrodeposition of Pt and Ru on boron-doped diamond (BDD films, in 0.5 M H2SO4 by cyclic voltammetry, has been prepared. The potential cycling, in the aqueous solutions of the respective metals, was between 0.00 and 1.00 V versus Ag/AgCl. The catalyst composites, Pt and PtRu, deposited on BDD film substrates, were tested for methanol oxidation. The modified diamond surfaces were also characterized by scanning electron microscopy-X-ray fluorescence-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The scanning Auger electron spectroscopy mapping showed the ruthenium signal only in areas where platinum was electrodeposited. Ruthenium does not deposit on the oxidized diamond surface of the boron-doped diamond. Particles with 5–10% of ruthenium with respect to platinum exhibited better performance for methanol oxidation in terms of methanol oxidation peak current and chronoamperometric current stability. The electrogenerated •OH radicals on BDD may interact with Pt surface, participating in the methanol oxidation as shown in oxidation current and the shift in the peak position. The conductive diamond surface is a good candidate as the support for the platinum electrocatalyst, because it ensures catalytic activity, which compares with the used carbon, and higher stability under severe anodic and cathodic conditions.

Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond

Czech Academy of Sciences Publication Activity Database

Šopík, Břetislav

2009-01-01

Roč. 11, č. 10 (2009), 103026/1-103026/10 ISSN 1367-2630 R&D Projects: GA AV ČR IAA100100712 Grant - others:GAČR(CZ) GA202/07/0597 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * boron-doped diamond Subject RIV: BE - Theoretical Physics Impact factor: 3.312, year: 2009

Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

Directory of Open Access Journals (Sweden)

Yu Lin Liu

2012-06-01

Full Text Available Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films.

Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

International Nuclear Information System (INIS)

Mendoza, Frank; Makarov, Vladimir; Hidalgo, Arturo; Weiner, Brad; Morell, Gerardo

2011-01-01

The room-temperature photosensitivity of sulfur-doped micro- (MCD), submicro- (SMCD) and nano- (NCD) crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy and X-ray diffraction. The UV sensitivity and response time were studied for the three types of diamond materials using a steady state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region, as high as 10 9 sec -1 mV -1 range, linear response in a broad spectral range below 320 nm, photocurrents around ∼10 -5 A, and short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials' photosensitivity

Electrical current at micro-/macro-scale of undoped and nitrogen-doped MWPECVD diamond films

Science.gov (United States)

Cicala, G.; Velardi, L.; Senesi, G. S.; Picca, R. A.; Cioffi, N.

2017-12-01

Chemical, structural, morphological and micro-/macro-electrical properties of undoped and nitrogen-(N-)doped diamond films are determined by X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, field emission scanning electron microscopy, atomic force microscopy, scanning capacitance microscopy (SCM) and two points technique for I-V characteristics, respectively. The characterization results are very useful to examine and understand the relationship among these properties. The effect of the nitrogen incorporation in diamond films is investigated through the evolution of the chemical, structural, morphological and topographical features and of the electrical behavior. The distribution of the electrical current is first assessed at millimeter scale on the surface of diamond films and then at micrometer scale on small regions in order to establish the sites where the carriers preferentially move. Specifically, the SCM images indicate a non-uniform distribution of carriers on the morphological structures mainly located along the grain boundaries. A good agreement is found by comparing the electrical currents at the micro- and macro-scale. This work aims to highlight phenomena such as photo- and thermionic emission from N-doped diamond useful for microelectronic engineering.

Hydrogen doped thin film diamond. Properties and application for electronic devices

International Nuclear Information System (INIS)

Looi, H.J.

2000-01-01

The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

Directory of Open Access Journals (Sweden)

Cui Xia Yan et al

2008-01-01

Full Text Available We have implanted boron (B ions (dosage: 5×1014 cm-2 into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.

Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

NARCIS (Netherlands)

Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

2013-01-01

Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy

Electrochemical evaluation and determination of antiretroviral drug fosamprenavir using boron-doped diamond and glassy carbon electrodes.

Science.gov (United States)

Gumustas, Mehmet; Ozkan, Sibel A

2010-05-01

Fosamprenavir is a pro-drug of the antiretroviral protease inhibitor amprenavir and is oxidizable at solid electrodes. The anodic oxidation behavior of fosamprenavir was investigated using cyclic and linear sweep voltammetry at boron-doped diamond and glassy carbon electrodes. In cyclic voltammetry, depending on pH values, fosamprenavir showed one sharp irreversible oxidation peak or wave depending on the working electrode. The mechanism of the oxidation process was discussed. The voltammetric study of some model compounds allowed elucidation of the possible oxidation mechanism of fosamprenavir. The aim of this study was to determine fosamprenavir levels in pharmaceutical formulations and biological samples by means of electrochemical methods. Using the sharp oxidation response, two voltammetric methods were described for the determination of fosamprenavir by differential pulse and square-wave voltammetry at the boron-doped diamond and glassy carbon electrodes. These two voltammetric techniques are 0.1 M H(2)SO(4) and phosphate buffer at pH 2.0 which allow quantitation over a 4 x 10(-6) to 8 x 10(-5) M range using boron-doped diamond and a 1 x 10(-5) to 1 x 10(-4) M range using glassy carbon electrodes, respectively, in supporting electrolyte. All necessary validation parameters were investigated and calculated. These methods were successfully applied for the analysis of fosamprenavir pharmaceutical dosage forms, human serum and urine samples. The standard addition method was used in biological media using boron-doped diamond electrode. No electroactive interferences from the tablet excipients or endogenous substances from biological material were found. The results were statistically compared with those obtained through an established HPLC-UV technique; no significant differences were found between the voltammetric and HPLC methods.

Thermal shock resistance of thick boron-doped diamond under extreme heat loads

NARCIS (Netherlands)

De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

2011-01-01

Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH

TL and LOE dosimetric evaluation of diamond films exposed to beta and ultraviolet radiation

International Nuclear Information System (INIS)

Preciado F, S.; Melendrez, R.; Chernov, V.; Barboza F, M.; Schreck, M.; Cruz Z, E.

2005-01-01

The diamond possesses a privileged position regarding other materials of great technological importance. Their applications go from the optics, microelectronics, metals industry, medicine and of course as dosemeter, in the registration and detection of ionizing and non ionizing radiation. In this work the results of TL/LOE obtained in two samples of diamond of 10 μm thickness grown by the chemical vapor deposition method (CVD) assisted by microwave plasma. The films were deposited in a silicon substrate (001) starting from a mixture of gases composed of CH 4 /H 2 and 750 ppm of molecular nitrogen as dopant. The samples were exposed to beta radiation (Sr 90 / Y 90 ) and ultraviolet, being stimulated later on thermal (TL) and optically (LOE) to evaluate their dosimetric properties. The sample without doping presented high response TL/LOE to the ultraviolet and beta radiation. The TL glow curve of the sample without doping showed two TL peaks with second order kinetics in the range of 520 to 550 K, besides a peak with first order kinetics of more intensity around 607 K. The TL efficiency of the non doped sample is bigger than the doped with nitrogen; however the LOE efficiency is similar in both samples. The results indicate that the CVD diamond possesses excellent perspectives for dosimetric applications, with special importance in radiotherapy due to it is biologically compatible with the human tissue. (Author)

Electrochemical reduction of oxygen on gold and boron-doped diamond electrodes in ambient temperature, molten acetamide-urea-ammonium nitrate eutectic melt

International Nuclear Information System (INIS)

Dilimon, V.S.; Venkata Narayanan, N.S.; Sampath, S.

2010-01-01

The electrochemical reduction of oxygen has been studied on gold, boron-doped diamond (BDD) and glassy carbon (GC) electrodes in a ternary eutectic mixture of acetamide (CH 3 CONH 2 ), urea (NH 2 CONH 2 ) and ammonium nitrate (NH 4 NO 3 ). Cyclic voltammetry (CV), differential pulse voltammetry (DPV), chronoamperometry and rotating disk electrode (RDE) voltammetry techniques have been employed to follow oxygen reduction reaction (ORR). The mechanism for the electrochemical reduction of oxygen on polycrystalline gold involves 2-step, 2-electron pathways of O 2 to H 2 O 2 and further reduction of H 2 O 2 to H 2 O. The first 2-electron reduction of O 2 to H 2 O 2 passes through superoxide intermediate by 1-electron reduction of oxygen. Kinetic results suggest that the initial 1-electron reduction of oxygen to HO 2 is the rate-determining step of ORR on gold surfaces. The chronoamperometric and RDE studies show a potential dependent change in the number of electrons on gold electrode. The oxygen reduction reaction on boron-doped diamond (BDD) seems to proceed via a direct 4-electron process. The reduction of oxygen on the glassy carbon (GC) electrode is a single step, irreversible, diffusion limited 2-electron reduction process to peroxide.

Measurement of the magnetic penetration depth in p-doped superconducting diamond films

Energy Technology Data Exchange (ETDEWEB)

Fuchs, Lorenz; Brunner, Markus C.P.; Schneider, Ina; Kronfeldner, Klaus [University of Regensburg (Germany); Bousquet, Jessica; Bustarret, Etienne; Strunk, Christoph [Institut Neel, Grenoble (France)

2016-07-01

Boron-doped diamond becomes superconducting once a critical doping concentration of 4.5 x 10{sup 20} cm{sup -3} is reached. Mutual inductance measurements with a two-coil setup have been performed to determine the magnetic penetration depth λ(T), which is a measure for the superfluid stiffnes θ ∝ 1/λ{sup 2}(T). Two superconducting p-doped diamond films with thicknesses of 145 nm and 345 nm were investigated. At low temperatures these values agree reasonably with the values expected within BCS-theory using T{sub c}, carrier density and mean free path determined from electric transport measurements. Magnetic penetration depths of 3.7 μm for the thinner and 2.6 μm for the thicker film have been found. λ decreases and accordingly θ increases with increasing film thickness. On the other hand, the superfluid stiffness drops by a factor of 2 or even more at T{sub c}/2, i.e., much faster than expected from BCS-theory, but remains finite between T{sub c}/2 < T < T{sub c}. At present it is unclear, whether this behavior results from the proliferation of phase fluctuations already far below T{sub c} or from a spatial inhomogeneity of the films.

Electrochemical protein cleavage in a microfluidic cell with integrated boron doped diamond electrodes

NARCIS (Netherlands)

van den Brink, Floris Teunis Gerardus; Zhang, Tao; Ma, Liwei; Odijk, Mathieu; Olthuis, Wouter; Permentier, Hjalmar P.; Bischoff, Rainer P.H.; van den Berg, Albert

2015-01-01

We present a microfluidic electrochemical cell with integrated boron doped diamond (BDD) electrodes which is designed for high electrochemical conversion efficiencies. With our newest developments, we aim to exploit the benefits of BDD as a novel electrode material to conduct tyrosine- and

Factors influencing voltammetric reduction of 5-nitroquinoline at boron-doped diamond electrodes

Czech Academy of Sciences Publication Activity Database

Vosáhlová, J.; Zavázalová, J.; Petrák, Václav; Schwarzová-Pecková, K.

2016-01-01

Roč. 147, č. 1 (2016), s. 21-29 ISSN 0026-9247 Institutional support: RVO:68378271 Keywords : voltammetry * boron-doped diamond electrode * boron concentration * reduction * electrochemistry Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.282, year: 2016

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Nesládek, M.; Mareš, Jiří J.; Tromson, D.; Mer, Ch.; Bergonzo, P.; Hubík, Pavel; Krištofik, Jozef

2006-01-01

Roč. 7, Suppl. 1 (2006), S41-S44 ISSN 1468-6996 R&D Projects: GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * electrical transport * doping * CVD diamond Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.124, year: 2006

Assessment of Electrodes Prepared from Wafers of Boron-doped Diamond for the Electrochemical Oxidation of Waste Lubricants

International Nuclear Information System (INIS)

Taylor, G.T.; Sullivan, I.A.; Newey, A.W.E.

2006-01-01

Electrochemical oxidation using boron-doped diamond electrodes is being investigated as a treatment process for radioactively contaminated oily wastes. Previously, it was shown that electrodes coated with a thin film of diamond were able to oxidise a cutting oil but not a mineral oil. These tests were inconclusive, because the electrodes lost their diamond coating during operation. Accordingly, an electrode prepared from a 'solid' wafer of boron-doped diamond is being investigated to determine whether it will oxidise mineral oils. The electrode has been tested with sucrose, a cutting oil and an emulsified mineral oil. Before and after each test, the state of the electrode was assessed by cyclic voltammetry with the ferro/ferricyanide redox couple. Analysis of the cyclic voltammogram suggested that material accumulated on the surface of the electrode during the tests. The magnitude of the effect was in the order: - emulsified mineral oil > cutting oil > sucrose. Despite this, the results indicated that the electrode was capable of oxidising the emulsified mineral oil. Confirmatory tests were undertaken in the presence of alkali to trap the carbon dioxide, but they had to be abandoned when the adhesive holding the diamond in the electrode was attacked by the alkali. Etching of the diamond wafer was also observed at the end of the tests. Surface corrosion is now regarded as an intrinsic part of the electrochemical oxidation on diamond, and it is expected that the rate of attack will determine the service life of the electrodes. (authors)

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

International Nuclear Information System (INIS)

Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

2014-01-01

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

International Nuclear Information System (INIS)

Li Liuan; Li Hongdong; Lue Xianyi; Cheng Shaoheng; Wang Qiliang; Ren Shiyuan; Liu Junwei; Zou Guangtian

2010-01-01

In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.

Insight into boron-doped diamond Raman spectra characteristic features

Czech Academy of Sciences Publication Activity Database

Mortet, Vincent; Vlčková Živcová, Zuzana; Taylor, Andrew; Frank, Otakar; Hubík, Pavel; Trémouilles, D.; Jomard, F.; Barjon, J.; Kavan, Ladislav

2017-01-01

Roč. 115, May (2017), s. 279-284 ISSN 0008-6223 R&D Projects: GA ČR GA13-31783S; GA MŠk 7AMB16FR004 Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * boron doping * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 6.337, year: 2016

Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro- and nanocrystalline diamond films

NARCIS (Netherlands)

Buijnsters, J.G.; Tsigkourakos, M.C.; Hantschel, T.; Gomes, F.O.V.; Nuytten, T.; Favia, P.; Bender, H; Arstila, K.; Celis, JP; Vandervorst, W

2016-01-01

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped

Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

Directory of Open Access Journals (Sweden)

Kevin E. Bennet

2015-05-01

Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

Visible-light sensitization of boron-doped nanocrystalline diamond through non-covalent surface modification

Czech Academy of Sciences Publication Activity Database

Krýsová, Hana; Vlčková Živcová, Zuzana; Bartoň, Jan; Petrák, Václav; Nesladek, M.; Cígler, Petr; Kavan, Ladislav

2015-01-01

Roč. 17, č. 2 (2015), s. 1165-1172 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : nanocrystallines * visible-light sensitization * boron-doped diamond Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.449, year: 2015

Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

OpenAIRE

Yu, Yuan; Zhou, Yanli; Wu, Liangzhuan; Zhi, Jinfang

2012-01-01

Boron-doped diamond (BDD) thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC), carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitiv...

Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

Science.gov (United States)

Shakhov, Fedor M.; Abyzov, Andrey M.; Takai, Kazuyuki

2017-12-01

Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C5H8(OH)4 and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6-80 nm and the increase in diamond lattice parameter by 0.02-0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm-1 to 1290 cm-1 without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω-1 cm-1. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H2O, CH4, CO, CO2, etc.), as well as byproducts formation (B2O3, B4C).

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

Science.gov (United States)

Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

2015-09-01

Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Science.gov (United States)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Synthesis of diamonds in Fe–C systems using nitrogen and hydrogen co-doped impurities under HPHT

International Nuclear Information System (INIS)

Sun Shi-Shuai; Xu Zhi-Hui; Cui Wen; Jia Xiao-Peng; Ma Hong-An

2017-01-01

In this study, we investigate the effect of nitrogen and hydrogen impurities on colors, morphologies, impurity structures and synthesis conditions of diamond crystals in Fe–C systems with C 3 N 6 H 6 additives at pressures in the range 5.0–6.5 GPa and temperatures of 1400–1700 °C in detail. Our results reveal that the octahedron diamond nucleation in a Fe–C system is evidently inhibited by co-doped N–H elements, thereby resulting in the increase of minimum pressure and temperature of diamond synthesis by spontaneous nucleation. The octahedron diamond crystals synthesized from a pure Fe–C system are colorless, while they become green in the system with C 3 N 6 H 6 additive. The surface defects of diamond will deteriorate when the nitrogen and hydrogen atoms simultaneously incorporate in the diamond growth environment in the Fe–C system. We believe that this study will provide some important information and be beneficial for the deep understanding of the crystallization of diamonds from different component systems. (paper)

Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

Directory of Open Access Journals (Sweden)

Alejandro Medel

2012-01-01

Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

Anodic oxidation of slaughterhouse wastewater on boron-doped diamond: process variables effect.

Science.gov (United States)

Abdelhay, Arwa; Jum'h, Inshad; Abdulhay, Enas; Al-Kazwini, Akeel; Alzubi, Mashael

2017-12-01

A non-sacrificial boron-doped diamond electrode was prepared in the laboratory and used as a novel anode for electrochemical oxidation of poultry slaughterhouse wastewater. This wastewater poses environmental threats as it is characterized by a high content of recalcitrant organics. The influence of several process variables, applied current density, initial pH, supporting electrolyte nature, and concentration of electrocoagulant, on chemical oxygen demand (COD) removal, color removal, and turbidity removal was investigated. Results showed that raising the applied current density to 3.83 mA/cm 2 has a positive effect on COD removal, color removal, and turbidity removal. These parameters increased to 100%, 90%, and 80% respectively. A low pH of 5 favored oxidants generation and consequently increased the COD removal percentage to reach 100%. Complete removal of COD had occurred in the presence of NaCl (1%) as supporting electrolyte. Na 2 SO 4 demonstrated lower efficiency than NaCl in terms of COD removal. The COD decay kinetics follows the pseudo-first-order reaction. The simultaneous use of Na 2 SO 4 and FeCl 3 decreased the turbidity in wastewater by 98% due to electrocoagulation.

The interplay between hydrogen evolution reaction and nitrate reduction on boron-doped diamond in aqueous solution: the effect of alkali cations

International Nuclear Information System (INIS)

Manzo-Robledo, A.; Lévy-Clément, C.; Alonso-Vante, N.

2014-01-01

The nitrate ion reduction was studied on boron-doped diamond (BDD) electrodes by real-time on-line differential electrochemical mass spectrometry (DEMS) coupled with chronoamperometry in K + , Na + cation-containing electrolyte solutions. It was found, via steady state voltammetry, that the hydrogen evolution reaction (HER) was affected by the presence of K + or Na + . A moderate HER occurs in K + -containing electrolyte solution favoring the reaction between NO 3 − and H 2 species, whereas in Na + -containing electrolyte solutions, the HER kinetics was more important leading to a suppression of molecular nitrogen generation. The use of isotope-labeled nitrogen and DEMS confirmed the influence of alkali cations toward the nitrate ion reduction

Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH)2 dendritic architectures

International Nuclear Information System (INIS)

Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo

2012-01-01

Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH) 2 dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH) 2 nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

Institute of Scientific and Technical Information of China (English)

王小平; 王丽军; 张启仁; 姚宁; 张兵临

2003-01-01

We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

Degradation of microcystin-RR using boron-doped diamond electrode

International Nuclear Information System (INIS)

Zhang Chunyong; Fu Degang; Gu Zhongze

2009-01-01

Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (c NaCl ) and applied current density (I appl ). Full and quick removal of 0.50 μg/ml MC-RR in solution was achieved when the operating conditions of c NaCl and I appl were 20 mM and 46.3 mA/cm 2 , or 35 mM and 18.2 mA/cm 2 respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

Plasma etching treatment for surface modification of boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Kondo, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Ito, Hiroyuki [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Kusakabe, Kazuhide [Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Ohkawa, Kazuhiro [Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan); Fujishima, Akira [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012 (Japan); Kawai, Takeshi [Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan)]. E-mail: kawai@ci.kagu.tus.ac.jp

2007-03-01

Boron-doped diamond (BDD) thin film surfaces were modified by brief plasma treatment using various source gases such as Cl{sub 2}, CF{sub 4}, Ar and CH{sub 4}, and the electrochemical properties of the surfaces were subsequently investigated. From X-ray photoelectron spectroscopy analysis, Cl and F atoms were detected on the BDD surfaces after 3 min of Cl{sub 2} and CF{sub 4} plasma treatments, respectively. From the results of cyclic voltammetry and electrochemical AC impedance measurements, the electron-transfer rate for Fe(CN){sub 6} {sup 3-/4-} and Fe{sup 2+/3+} at the BDD electrodes was found to decrease after Cl{sub 2} and CF{sub 4} plasma treatments. However, the electron-transfer rate for Ru(NH{sub 3}){sub 6} {sup 2+/3+} showed almost no change after these treatments. This may have been related to the specific interactions of surface halogen (C-Cl and C-F) moieties with the redox species because no electrical passivation was observed after the treatments. In addition, Raman spectroscopy showed that CH{sub 4} plasma treatment of diamond surfaces formed an insulating diamond-like carbon thin layer on the surfaces. Thus, by an appropriate choice of plasma source, short-duration plasma treatments can be an effective way to functionalize diamond surfaces in various ways while maintaining a wide potential window and a low background current.

Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

Science.gov (United States)

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

2016-11-30

Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

Anodic oxidation of benzoquinone using diamond anode.

Science.gov (United States)

Panizza, Marco

2014-01-01

The anodic degradation of 1,4-benzoquinone (BQ), one of the most toxic xenobiotic, was investigated by electrochemical oxidation at boron-doped diamond anode. The electrolyses have been performed in a single-compartment flow cell in galvanostatic conditions. The influence of applied current (0.5-2 A), BQ concentration (1-2 g dm(-3)), temperature (20-45 °C) and flow rate (100-300 dm(3) h(-1)) has been studied. BQ decay kinetic, the evolution of its oxidation intermediates and the mineralization of the aqueous solutions were monitored during the electrolysis by high-performance liquid chromatograph (HPLC) and chemical oxygen demand (COD) measurements. The results obtained show that the use of diamond anode leads to total mineralization of BQ in any experimental conditions due to the production of oxidant hydroxyl radicals electrogenerated from water discharge. The decay kinetics of BQ removal follows a pseudo-first-order reaction, and the rate constant increases with rising current density. The COD removal rate was favoured by increasing of applied current, recirculating flow rate and it is almost unaffected by solution temperature.

Transient photoresponse of nitrogen-doped ultrananocrystalline diamond electrodes in saline solution

Energy Technology Data Exchange (ETDEWEB)

Ahnood, Arman, E-mail: arman.ahnood@unimelb.edu.au; Ganesan, Kumaravelu; Stacey, Alastair; Prawer, Steven [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Simonov, Alexandr N.; Spiccia, Leone [School of Chemistry and the ARC Centre of Excellence for Electromaterials Science, Monash University, Melbourne, Victoria 3800 (Australia); Laird, Jamie S. [CSIRO, Minerals Resources Flagship, School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Maturana, Matias I. [National Vision Research Institute, Australian College of Optometry, Carlton, Victoria 3053 (Australia); NeuroEngineering Laboratory, Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010 (Australia); Ibbotson, Michael R. [National Vision Research Institute, Australian College of Optometry, Carlton, Victoria 3053 (Australia); ARC Centre of Excellence for Integrative Brain Function, Department of Optometry and Vision Sciences, University of Melbourne, Parkville, Victoria 3010 (Australia)

2016-03-07

Beyond conventional electrically-driven neuronal stimulation methods, there is a growing interest in optically-driven approaches. In recent years, nitrogen-doped ultrananocrystalline diamond (N-UNCD) has emerged as a strong material candidate for use in electrically-driven stimulation electrodes. This work investigates the electrochemical activity of N-UNCD in response to pulsed illumination, to assess its potential for use as an optically-driven stimulation electrode. Whilst N-UNCD in the as-grown state exhibits a weak photoresponse, the oxygen plasma treated film exhibits two orders of magnitude enhancement in its sub-bandgap open circuit photovoltage response. The enhancement is attributed to the formation of a dense network of oxygen-terminated diamond nanocrystals at the N-UNCD surface. Electrically connected to the N-UNCD bulk via sub-surface graphitic grain boundaries, these diamond nanocrystals introduce a semiconducting barrier between the sub-surface graphitic semimetal and the electrolyte solution, leading to a photovoltage under irradiation with wavelengths of λ = 450 nm and shorter. Within the safe optical exposure limit of 2 mW mm{sup −2}, charge injection capacity of 0.01 mC cm{sup −2} is achieved using a 15 × 15 μm electrode, meeting the requirements for extracellular and intercellular stimulation. The nanoscale nature of processes presented here along with the diamond's biocompatibility and biostability open an avenue for the use of oxygen treated N-UNCD as optically driven stimulating electrodes.

Transient photoresponse of nitrogen-doped ultrananocrystalline diamond electrodes in saline solution

International Nuclear Information System (INIS)

Ahnood, Arman; Ganesan, Kumaravelu; Stacey, Alastair; Prawer, Steven; Simonov, Alexandr N.; Spiccia, Leone; Laird, Jamie S.; Maturana, Matias I.; Ibbotson, Michael R.

2016-01-01

Beyond conventional electrically-driven neuronal stimulation methods, there is a growing interest in optically-driven approaches. In recent years, nitrogen-doped ultrananocrystalline diamond (N-UNCD) has emerged as a strong material candidate for use in electrically-driven stimulation electrodes. This work investigates the electrochemical activity of N-UNCD in response to pulsed illumination, to assess its potential for use as an optically-driven stimulation electrode. Whilst N-UNCD in the as-grown state exhibits a weak photoresponse, the oxygen plasma treated film exhibits two orders of magnitude enhancement in its sub-bandgap open circuit photovoltage response. The enhancement is attributed to the formation of a dense network of oxygen-terminated diamond nanocrystals at the N-UNCD surface. Electrically connected to the N-UNCD bulk via sub-surface graphitic grain boundaries, these diamond nanocrystals introduce a semiconducting barrier between the sub-surface graphitic semimetal and the electrolyte solution, leading to a photovoltage under irradiation with wavelengths of λ = 450 nm and shorter. Within the safe optical exposure limit of 2 mW mm"−"2, charge injection capacity of 0.01 mC cm"−"2 is achieved using a 15 × 15 μm electrode, meeting the requirements for extracellular and intercellular stimulation. The nanoscale nature of processes presented here along with the diamond's biocompatibility and biostability open an avenue for the use of oxygen treated N-UNCD as optically driven stimulating electrodes.

Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

Czech Academy of Sciences Publication Activity Database

Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Kavan, Ladislav

2015-01-01

Roč. 55, MAY 2015 (2015), s. 70-76 ISSN 0925-9635 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Boron doped diamond * Electrochemical impedance spectroscopy * Aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 2.125, year: 2015

Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

2006-01-01

Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

Energy Technology Data Exchange (ETDEWEB)

Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)

2016-07-30

Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

SiV color centers in Si-doped isotopically enriched {sup 12}C and {sup 13}C CVD diamonds

Energy Technology Data Exchange (ETDEWEB)

Sedov, Vadim; Bolshakov, Andrey [General Physics Institute, RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Boldyrev, Kirill [Institute of Spectroscopy, RAS, Troitsk, Moscow (Russian Federation); Krivobok, Vladimir; Nikolaev, Sergei [Lebedev Physical Institute, RAS, Moscow (Russian Federation); Khomich, Alex [Institute of Radio Engineering and Electronics, RAS, Fryazino (Russian Federation); Khomich, Andrew [General Physics Institute, RAS, Moscow (Russian Federation); Institute of Radio Engineering and Electronics, RAS, Fryazino (Russian Federation); Krasilnikov, Anatoly [Institution ' ' ProjectCenter ITER' ' , Moscow (Russian Federation); Ralchenko, Victor [General Physics Institute, RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Harbin Institute of Technology, Harbin (China)

2017-11-15

The effect of isotopic modification of diamond lattice on photoluminescence (PL) and optical absorption spectra of ensembles of SiV{sup -} centers was studied. Thin epitaxial diamond layers were grown by a microwave plasma CH{sub 4}/H{sub 2} mixtures using methane enriched to 99.96% for either {sup 12}C or {sup 13}C isotopes, while the Si doping was performed by adding a small percentage of silane SiH{sub 4} into the plasma. Temperature dependent SiV{sup -} ZPL spectra in absorption were measured at 3-80 K to monitor the evolution of the ZPL fine structure. It is found that the SiV{sup -} ZPL at 736.9 nm observed in PL for {sup 12}C diamond at T = 5 K, exhibits a blue shift of 1.78 meV, to 736.1 nm in {sup 13}C diamond matrix. Narrow ZPL with the width (FWHM) of 0.09 meV (21 GHz) was measured in absorption spectra at T = 3-30 K in the Si-doped {sup 13}C diamond. Besides the charged SiV{sup -} center, the absorption of the neutral SiV{sup 0} defect at 946 nm wavelength has also been detected. From changes observed in SiV{sup -} phonon band structure in PL with isotopic modification, the band at 64 meV was confirmed to be a local vibration mode (LVM) involving a Si atom. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Development of solar-driven electrochemical and photocatalytic water treatment system using a boron-doped diamond electrode and TiO2 photocatalyst.

Science.gov (United States)

Ochiai, Tsuyoshi; Nakata, Kazuya; Murakami, Taketoshi; Fujishima, Akira; Yao, Yanyan; Tryk, Donald A; Kubota, Yoshinobu

2010-02-01

A high-performance, environmentally friendly water treatment system was developed. The system consists mainly of an electrochemical and a photocatalytic oxidation unit, with a boron-doped diamond (BDD) electrode and TiO(2) photocatalyst, respectively. All electric power for the mechanical systems and the electrolysis was able to be provided by photovoltaic cells. Thus, this system is totally driven by solar energy. The treatment ability of the electrolysis and photocatalysis units was investigated by phenol degradation kinetics. An observed rate constant of 5.1 x 10(-3)dm(3)cm(-2)h(-1) was calculated by pseudo-first-order kinetic analysis for the electrolysis, and a Langmuir-Hinshelwood rate constant of 5.6 microM(-1)min(-1) was calculated by kinetic analysis of the photocatalysis. According to previous reports, these values are sufficient for the mineralization of phenol. In a treatment test of river water samples, large amounts of chemical and biological contaminants were totally wet-incinerated by the system. This system could provide 12L/day of drinking water from the Tama River using only solar energy. Therefore, this system may be useful for supplying drinking water during a disaster. (c) 2009 Elsevier Ltd. All rights reserved.

Polycrystalline boron-doped diamond electrodes for electrocatalytic and electrosynthetic applications.

Science.gov (United States)

Ivandini, Tribidasari A; Einaga, Yasuaki

2017-01-24

Boron-doped diamond (BDD) electrodes are recognized as being superior to other electrode materials due to their outstanding chemical and dimensional stability, their exceptionally low background current, the extremely wide potential window for water electrolysis that they have, and their excellent biocompatibility. However, whereas these properties have been utilized in the rapid development of electroanalytical applications, very few studies have been done in relation to their applications in electrocatalysis or electrosynthesis. In this report, following on from reports of the electrosynthesis of various products through anodic and cathodic reactions using BDD electrodes, the potential use of these electrodes in electrosynthesis is discussed.

Diamond semiconducting devices

International Nuclear Information System (INIS)

Polowczyk, M.; Klugmann, E.

1999-01-01

Many efforts to apply the semiconducting diamond for construction of electronic elements: resistors, thermistors, photoresistors, piezoresistors, hallotrons, pn diodes, Schottky diodes, IMPATT diodes, npn transistor, MESFETs and MISFETs are reviewed. Considering the possibilities of acceptor and donor doping, electrical resistivity and thermal conductivity of diamond as well as high electric-field breakdown points, that diamond devices could be used at about 30-times higher frequency and more then 8200 times power than silicon devices. Except that, due to high heat resistant of diamond, it is concluded that diamond devices can be used in environment at high temperature, range of 600 o C. (author)

Optimizing biosensing properties on undecylenic Acid-functionalized diamond.

Science.gov (United States)

Zhong, Yu Lin; Chong, Kwok Feng; May, Paul W; Chen, Zhi-Kuan; Loh, Kian Ping

2007-05-08

The optimization of biosensing efficiency on a diamond platform depends on the successful coupling of biomolecules on the surface, and also on effective signal transduction in the biorecognition events. In terms of biofunctionalization of diamond surfaces, surface electrochemical studies of diamond modified with undecylenic acid (UA), with and without headgroup protection, were performed. The direct photochemical coupling method employing UA was found to impart a higher density of carboxylic acid groups on the diamond surface compared to that using trifluoroethyl undecenoate (TFEU) as the protecting group during the coupling process. Non-faradic impedimetric DNA sensing revealed that lightly doped diamond gives better signal transduction sensitivity compared to highly doped diamond.

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

Science.gov (United States)

Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

2014-02-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Fabrication of boron-doped nanocrystalline diamond nanoflowers based on 3D Cu(OH){sub 2} dendritic architectures

Energy Technology Data Exchange (ETDEWEB)

Sim, Huijun; Hong, Sukin; Lee, Seungkoo; Lim, Daesoon; Jin, Juneon; Hwang, Sungwoo [Korea University, Seoul (Korea, Republic of)

2012-03-15

Hot-filament chemical vapor deposition (HFCVD) was used to prepare boron-doped nanocrystalline diamond (BDND) nanoflowers on a Cu substrate with a Cu(OH){sub 2} dendritic architecture that had been formed by using electrostatic self-assembly (ESA) method with nanodiamond particles. The formation of diamond nanoflowers is controlled by the reaction time between the Cu(OH){sub 2} nanoflowers and the polymeric linker for the electrostatic attachment of nanodiamonds and by the deposition time for CVD diamond growth with a high nucleation density. Through analysis by field emission scanning electron microscopy (FESEM) and Raman spectroscopy, the optimal conditions for the synthesis of BDND nanoflowers are determined, and a possible explanation is provided.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

International Nuclear Information System (INIS)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

2016-01-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Science.gov (United States)

Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

2016-06-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Energy Technology Data Exchange (ETDEWEB)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

Czech Academy of Sciences Publication Activity Database

Kavan, Ladislav; Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Janda, Pavel; Tarábková, Hana; Nesladek, M.; Mortet, Vincent

2015-01-01

Roč. 179, OCT 2015 (2015), s. 626-636 ISSN 0013-4686 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Raman spectroelectrochemistry * atomic force microscopy * boron doped diamond Subject RIV: CG - Electrochemistry Impact factor: 4.803, year: 2015

Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

Czech Academy of Sciences Publication Activity Database

Marton, M.; Mikolášek, M.; Bruncko, J.; Novotný, I.; Ižák, Tibor; Vojs, M.; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

2015-01-01

Roč. 66, č. 5 (2015), s. 277-281 ISSN 1335-3632 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) 7AMB14SK024 Institutional support: RVO:68378271 Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.407, year: 2015

Nitrogen-doped diamond electrode shows high performance for electrochemical reduction of nitrobenzene

International Nuclear Information System (INIS)

Zhang, Qing; Liu, Yanming; Chen, Shuo; Quan, Xie; Yu, Hongtao

2014-01-01

Highlights: • A metal-free nitrogen-doped diamond electrode was synthesized. • The electrode exhibits high electrocatalytic activity for nitrobenzene reduction. • The electrode exhibits high selectivity for reduction of nitrobenzene to aniline. • High energy efficiency was obtained compared with graphite electrode. -- Abstract: Effective electrode materials are critical to electrochemical reduction, which is a promising method to pre-treat anti-oxidative and bio-refractory wastewater. Herein, nitrogen-doped diamond (NDD) electrodes that possess superior electrocatalytic properties for reduction were fabricated by microwave-plasma-enhanced chemical vapor deposition technology. Nitrobenzene (NB) was chosen as the probe compound to investigate the material's electro-reduction activity. The effects of potential, electrolyte concentration and pH on NB reduction and aniline (AN) formation efficiencies were studied. NDD exhibited high electrocatalytic activity and selectivity for reduction of NB to AN. The NB removal efficiency and AN formation efficiency were 96.5% and 88.4% under optimal conditions, respectively; these values were 1.13 and 3.38 times higher than those of graphite electrodes. Coulombic efficiencies for NB removal and AN formation were 27.7% and 26.1%, respectively; these values were 4.70 and 16.6 times higher than those of graphite electrodes under identical conditions. LC–MS analysis revealed that the dominant reduction pathway on the NDD electrode was NB to phenylhydroxylamine (PHA) to AN

Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

Directory of Open Access Journals (Sweden)

Rattanakorn Saensak

2014-03-01

Full Text Available This work reports characterizations of diamond-like carbon (DLC films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN63-/Fe(CN64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

DEFF Research Database (Denmark)

Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

2015-01-01

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: → DLC thin films were deposited on Si substrates via dc magnetron sputtering. → Some DLC films were doped with N and/or Pt/Ru. → The film corrosion behavior was studied in a Hank solution with polarization test. → The PtRu-DLC film showed the highest corrosion potential among the films studied.

Coating dental implant abutment screws with diamondlike carbon doped with diamond nanoparticles: the effect on maintaining torque after mechanical cycling.

Science.gov (United States)

Lepesqueur, Laura Soares; de Figueiredo, Viviane Maria Gonçalves; Ferreira, Leandro Lameirão; Sobrinho, Argemiro Soares da Silva; Massi, Marcos; Bottino, Marco Antônio; Nogueira Junior, Lafayette

2015-01-01

To determine the effect of maintaining torque after mechanical cycling of abutment screws that are coated with diamondlike carbon and coated with diamondlike carbon doped with diamond nanoparticles, with external and internal hex connections. Sixty implants were divided into six groups according to the type of connection (external or internal hex) and the type of abutment screw (uncoated, coated with diamondlike carbon, and coated with diamondlike carbon doped with diamond nanoparticles). The implants were inserted into polyurethane resin and crowns of nickel chrome were cemented on the implants. The crowns had a hole for access to the screw. The initial torque and the torque after mechanical cycling were measured. The torque values maintained (in percentages) were evaluated. Statistical analysis was performed using one-way analysis of variance and the Tukey test, with a significance level of 5%. The largest torque value was maintained in uncoated screws with external hex connections, a finding that was statistically significant (P = .0001). No statistically significant differences were seen between the groups with and without coating in maintaining torque for screws with internal hex connections (P = .5476). After mechanical cycling, the diamondlike carbon with and without diamond doping on the abutment screws showed no improvement in maintaining torque in external and internal hex connections.

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

International Nuclear Information System (INIS)

Čermák, Jan; Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

2014-01-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

Energy Technology Data Exchange (ETDEWEB)

Čermák, Jan, E-mail: cermakj@fzu.cz; Rezek, Bohuslav [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague 6 (Czech Republic); Koide, Yasuo [Sensor Materials Center, National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Takeuchi, Daisuke [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

2014-02-07

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

Energy Technology Data Exchange (ETDEWEB)

Kapilashrami, M.; Zegkinoglou, I. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Törndahl, T.; Fjällström, V. [Ångström Solar Center, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Lischner, J. [Department of Physics, University of California, Berkeley, California 94720 (United States); Louie, Steven G. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States); Hamers, R. J.; Zhang, L. [Department of Chemistry, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Guo, J.-H. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Himpsel, F. J., E-mail: fhimpsel@wisc.edu [Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)

2014-10-14

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

Science.gov (United States)

Coleman, Christopher; Bhattacharyya, Somnath

2017-11-01

The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

The processing of heteroepitaxial thin-film diamond for electronic applications

International Nuclear Information System (INIS)

McGrath, J.

1998-09-01

Thin film diamond is of particular interest because of its wide applicability, including its potential use in high temperature electronics. This thesis describes a study of some of the processing stages required to exploit thin film diamond as an electronic device. Initial experiments were carried out to optimise bi-metallic contact schemes on orientated diamond film using electrical measurements and chemical analysis. Temperature stability was also investigated and it was concluded that the most favourable ohmic contact scheme is aluminium-on-titanium. Further electrical measurements confirmed that the contribution of resistance made by the contacts themselves to the metal/diamond/metal system overall was acceptably low, specifically 6 Ω.cm 2 for an undoped diamond system and less than 3 x 10 -6 Ω.cm 2 for boron doped diamond. To improve the as-grown resistivity of diamond films, an oxygen/argon plasma etch process was applied. The input parameters of the plasma system were optimised to give the maximum achievable resistivity of 4 x 10 11 Ω.cm. This was attained using a statistical design procedure via analysis of resistivity and etch rate outputs. Having optimised post growth treatment and contact metallisation, undoped and doped orientated diamond films were characterised via voltage and temperature dependencies. It was concluded that the dominant charge transport mechanisms for undoped diamond, nitrogen and boron doped diamond were variable range hopping at low temperatures up to 523 K and grain boundary effects. At higher temperatures, valence or impurity band conduction appeared to be the probable mechanisms with activation energies of 0.23 eV for nitrogen doped diamond and 0.08 eV for boron doped diamond. Preliminary experiments electrical properties of diamond and initial results suggested the presence of a high density of recombination centres. The final stage of experimental research initiated a study of direct electron beam writing lithography to

Diamond: a material for acoustic devices

OpenAIRE

MORTET, Vincent; WILLIAMS, Oliver; HAENEN, Ken

2008-01-01

Diamond has been foreseen to replace silicon for high power, high frequency electronic applications or for devices that operates in harsh environments. However, diamond electronic devices are still in the laboratory stage due to the lack of large substrates and the complexity of diamond doping. On another hand, surface acoustic wave filters based on diamond are commercially available. Diamond is especially suited for acoustic applications because of its exceptional mechanical properties. The ...

Vertically aligned nanowires from boron-doped diamond.

Science.gov (United States)

Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

2008-11-01

Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

Czech Academy of Sciences Publication Activity Database

Ashcheulov, Petr; Šebera, Jakub; Kovalenko, Alexander; Petrák, Václav; Fendrych, František; Nesládek, M.; Taylor, Andrew; Vlčková Živcová, Zuzana; Frank, Otakar; Kavan, Ladislav; Dračínský, Martin; Hubík, Pavel; Vacík, Jiří; Kraus, I.; Kratochvílová, Irena

2013-01-01

Roč. 86, č. 10 (2013), , "443-1"-"443-9" ISSN 1434-6028 R&D Projects: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA MŠk(XE) LM2011019; GA ČR GA13-31783S; GA MŠk(CZ) LD11076 EU Projects: European Commission(XE) 238201 - MATCON Institutional support: RVO:68378271 ; RVO:61388955 ; RVO:61388963 ; RVO:61389005 Keywords : polycrystalline diamond layer * conductivity B doping Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 1.463, year: 2013

Understanding anodic wear at boron doped diamond film electrodes

International Nuclear Information System (INIS)

Chaplin, Brian P.; Hubler, David K.; Farrell, James

2013-01-01

This research investigated the mechanisms associated with anodic wear of boron-doped diamond (BDD) film electrodes. Cyclic voltammetry (CV), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS) were used to measure changes in electrode response and surface chemistry as a function of the charge passed and applied current density. Density functional theory (DFT) modeling was used to evaluate possible reaction mechanisms. The initial hydrogen-terminated surface was electrochemically oxidized at lower potentials than water oxidation (≤ 1.83 V/SHE), and was not catalyzed by the hydrogen-terminated surface. In the region where water oxidation produces hydroxyl radicals (OH·), the hydrogen-terminated surface may also be oxidized by chemical reaction with OH·. Oxygen atoms became incorporated into the surface via reaction of carbon atoms with OH·, forming both C = O and C-OH functional groups, that were also detected by XPS measurements. Experimental and DFT modeling results indicate that the oxygenated diamond surface lowers the potential for activationless water oxidation from 2.74 V/SHE for the hydrogen terminated surface to 2.29 V/SHE for the oxygenated surface. Electrode wear was accelerated at high current densities (i.e., 500 mA cm −2 ), where SEM results indicated oxidation of the BDD film resulted in significant surface roughening. These results are supported by EIS measurements that document an increase in the double-layer capacitance as a function of the charge passed. DFT simulations provide a possible mechanism that explains the observed diamond oxidation. DFT simulation results indicate that BDD edge sites (=CH 2 ) can be converted to COOH functional groups, which are further oxidized via reactions with OH· to form H 2 CO 3(aq.) with an activation energy of 58.9 kJ mol −1

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

International Nuclear Information System (INIS)

Kapilashrami, M.; Zegkinoglou, I.; Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S.; Törndahl, T.; Fjällström, V.; Lischner, J.; Louie, Steven G.; Hamers, R. J.; Zhang, L.; Guo, J.-H.; Himpsel, F. J.

2014-01-01

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se 2 (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO = VBM CIGS – VBM diamond  = 0.3 eV ± 0.1 eV at the CIGS/Diamond interface and 0.0 eV ± 0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

Screening metal nanoparticles using boron-doped diamond microelectrodes

Energy Technology Data Exchange (ETDEWEB)

Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Rangkuti, Prasmita K. [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Faculty of Science and Technology, Keio University (Japan); JST ACCEL, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan)

2016-04-19

Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

Screening metal nanoparticles using boron-doped diamond microelectrodes

International Nuclear Information System (INIS)

Ivandini, Tribidasari A.; Rangkuti, Prasmita K.; Einaga, Yasuaki

2016-01-01

Boron-doped diamond (BDD) microelectrodes were used to observe the correlation between electrocatalytic currents caused by individual Pt nanoparticle (Pt-np) collisions at the electrode. The BDD microelectrodes, ∼20 µm diameter and ∼2 µm particle size, were fabricated at the surface of tungsten wires. Pt-np with a size of 1 to 5 nm with agglomerations up to 20 nm was used for observation. The electrolytic currents were observed via catalytic reaction of 15 mM hydrazine in 50 mM phosphate buffer solution at Pt-np at 0.4 V when it collides with the surface of the microelectrodes. The low current noise and wider potential window in the measurements using BDD microelectrode produced a better results, which represents a better correlation to the TEM result of the Pt-np, compared to when gold microelectrodes was used.

Electrochemical applications of CVD diamond

International Nuclear Information System (INIS)

Pastor-Moreno, Gustavo

2002-01-01

Diamond technology has claimed an important role in industry since non-expensive methods of synthesis such as chemical vapour deposition allow to elaborate cheap polycrystalline diamond. This fact has increased the interest in the scientific community due to the outstanding properties of diamond. Since Pleskov published in 1987 the first paper in electrochemistry, many researchers around the world have studied different aspects of diamond electrochemistry such as reactivity, electrical structure, etc. As part of this worldwide interest these studies reveal new information about diamond electrodes. These studies report investigation of diamond electrodes characterized using structural techniques like scanning electrode microscopy and Raman spectroscopy. A new electrochemical theory based on surface states is presented that explains the metal and the semiconductor behaviour in terms of the doping level of the diamond electrode. In an effort to characterise the properties of diamond electrodes the band edges for hydrogen and oxygen terminated surface are located in organic solvent, hence avoiding possible interference that are present in aqueous solution. The determination of the band edges is performed by Mott-Schottky studies. These allow the calculation of the flat band potential and therefore the band edges. Additional cyclic voltammetric studies are presented for both types of surface termination. Mott-Schottky data and cyclic voltammograms are compared and explained in terms of the band edge localisation. Non-degenerately p-type semiconductor behaviour is presented for hydrogen terminated boron doped diamond. Graphitic surface states on oxidised surface boron doped diamond are responsible for the electrochemistry of redox couples that posses similar energy. Using the simple redox couple 1,4-benzoquinone effect of surface termination on the chemical behaviour of diamond is presented. Hydrogen sublayers in diamond electrodes seem to play an important role for the

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Science.gov (United States)

Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

2016-05-01

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

Polycrystalline Diamond Schottky Diodes and Their Applications.

Science.gov (United States)

Zhao, Ganming

In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

Kinetics of adsorption of zinc-ions by doped manganese dioxides

International Nuclear Information System (INIS)

Rophael, M.W.; Mourad, W.E.; Khalil, L.B.; Malati, M.A.

1979-01-01

Using 65 Zn-labelled solutions, the kinetics of the specific adsorption of Zn 2+ -ions by doped manganese dioxides was studied, at pH values corresponding to their isoelectric points (IEP's), by γ-ray scintillation counting. The rate of the fast adsorption of Zn 2+ -ions by doped dioxides increased in the series: Li + -doped 2+ -ions in about 10 minutes exhibited a similar increase. Compared to the undoped sample, the extent and the rate of adsorption were lower for the samples doped with an ion of valence 4. (author)

Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

Czech Academy of Sciences Publication Activity Database

Kociniewski, T.; Remeš, Zdeněk; Mer, C.; Nesládek, Miloš; Habka, N.; Barjon, J.; Jomard, F.; Chevallier, J.; Omnès, F.; Tromson, D.; Bergonzo, P.

2009-01-01

Roč. 18, 5-8 (2009), s. 827-830 ISSN 0925-9635 Institutional research plan: CEZ:AV0Z10100521 Keywords : AMFTPS * DBP * boron doped diamond * passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.822, year: 2009

Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

International Nuclear Information System (INIS)

Niedziolka-Joensson, Joanna; Boland, Susan; Leech, Donal; Boukherroub, Rabah; Szunerits, Sabine

2010-01-01

The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W.; Liu, E., E-mail: MEJLiu@ntu.edu.sg

2011-10-10

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: {yields} DLC thin films were deposited on Si substrates via dc magnetron sputtering. {yields} Some DLC films were doped with N and/or Pt/Ru. {yields} The film corrosion behavior was studied in a Hank solution with polarization test. {yields} The PtRu-DLC film showed the highest corrosion potential among the films studied.

Boron doped diamond electrode for the wastewater treatment

International Nuclear Information System (INIS)

Quiroz Alfaro, Marco Antonio; Ferro, Sergio; Martinez-Huitle, Carlos Alberto; Vong, Yunny Meas

2006-01-01

Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

Boron doped diamond electrode for the wastewater treatment

Directory of Open Access Journals (Sweden)

Alfaro Marco Antonio Quiroz

2006-01-01

Full Text Available Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

Energy Technology Data Exchange (ETDEWEB)

Mokuno, Yoshiaki, E-mail: mokuno-y@aist.go.jp; Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2014-06-23

A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

Directory of Open Access Journals (Sweden)

V. Petrák

2011-01-01

Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

TL and LOE dosimetric evaluation of diamond films exposed to beta and ultraviolet radiation; Evaluacion dosimetrica TL y LOE de peliculas de diamante expuestas a radiacion beta y ultravioleta

Energy Technology Data Exchange (ETDEWEB)

Preciado F, S.; Melendrez, R.; Chernov, V.; Barboza F, M. [Universidad de Sonora, A.P. 13 y A.P. 5-088, 83000 Hermosillo, Sonora (Mexico); Schreck, M. [Universitaet Augsburg, Institut fuer Physik D-86135 (Germany); Cruz Z, E. [ICN, UNAM, 04500 Mexico D.F. (Mexico)

2005-07-01

The diamond possesses a privileged position regarding other materials of great technological importance. Their applications go from the optics, microelectronics, metals industry, medicine and of course as dosemeter, in the registration and detection of ionizing and non ionizing radiation. In this work the results of TL/LOE obtained in two samples of diamond of 10 {mu}m thickness grown by the chemical vapor deposition method (CVD) assisted by microwave plasma. The films were deposited in a silicon substrate (001) starting from a mixture of gases composed of CH{sub 4}/H{sub 2} and 750 ppm of molecular nitrogen as dopant. The samples were exposed to beta radiation (Sr{sup 90}/ Y{sup 90}) and ultraviolet, being stimulated later on thermal (TL) and optically (LOE) to evaluate their dosimetric properties. The sample without doping presented high response TL/LOE to the ultraviolet and beta radiation. The TL glow curve of the sample without doping showed two TL peaks with second order kinetics in the range of 520 to 550 K, besides a peak with first order kinetics of more intensity around 607 K. The TL efficiency of the non doped sample is bigger than the doped with nitrogen; however the LOE efficiency is similar in both samples. The results indicate that the CVD diamond possesses excellent perspectives for dosimetric applications, with special importance in radiotherapy due to it is biologically compatible with the human tissue. (Author)

Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

Institute of Scientific and Technical Information of China (English)

HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

2009-01-01

The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

Concentration and electrode material dependence of the voltammetric response of iodide on platinum, glassy carbon and boron-doped diamond in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide

International Nuclear Information System (INIS)

Bentley, Cameron L.; Bond, Alan M.; Hollenkamp, Anthony F.; Mahon, Peter J.; Zhang, Jie

2013-01-01

The electro-oxidation of iodide has been investigated as a function of concentration using steady-state microelectrode voltammetry, transient cyclic voltammetry and linear-sweep semi-integral voltammetry on platinum, glassy carbon and boron-doped diamond electrodes in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide. Two oxidation processes are observed on all of the investigated electrode materials, with the first being assigned to the oxidation of iodide to triiodide (confirmed by UV/visible spectroscopy) and the second being attributed to the oxidation of triiodide to iodine. Iodide oxidation is kinetically more facile on platinum compared to glassy carbon or boron-doped diamond. At elevated bulk iodide concentrations, the nucleation and growth of sparingly soluble electrogenerated iodine at the electrode surface was observed and imaged in situ using optical microscopy. The diffusion coefficient of iodide was determined to be 2.59 (±0.04) × 10 −7 cm 2 s −1 and independent of the bulk concentration of iodide. The steady-state iodide oxidation current measured at a platinum microelectrode was found to be a linear function of iodide concentration, as expected if there are no contributions from non-Stokesian mass-transport processes (electron hopping and/or Grotthuss-type exchange) under the investigated conditions

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Energy Technology Data Exchange (ETDEWEB)

Sartori, Andre F.; Fischer, Martin; Gsell, Stefan; Schreck, Matthias [Universitaet Augsburg, Institut fuer Physik, 86135 Augsburg (Germany)

2012-09-15

In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO{sub 2} as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of {proportional_to}50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N{sub 2} and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N{sub 2} concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 C contain high intrinsic stress that varies from -2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Modified diamond electrodes for electrolysis and electroanalysis applications

International Nuclear Information System (INIS)

Einaga, Yasuaki; Sato, Rika; Olivia, Herlambang; Shin, Dongchan; Ivandini, T.A.; Fujishima, Akira

2004-01-01

The outstanding properties of diamond make it a very attractive material for use in many potential applications. In particular, the superior electrochemical properties of highly boron-doped conductive diamond films, prepared by the chemical vapor deposition (CVD) process, have received attention from electrochemists. This paper reports several diversified applications of boron-doped diamond electrodes; highly sensitive and interference-free microfiber electrodes with over-oxidized polypyrrole modification, integrated electrochemical detector for microchip capillary electrophoresis (CE), and smoothing treatments of micro-polycrystalline surface. Studies have been made of the electrochemical properties of each system and their application in electroanalysis is discussed

Detection of DNA nucleotides on pretreated boron doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Garbellini, Gustavo S.; Uliana, Carolina V.; Yamanaka, Hideko [UNESP, Araraquara, SP (Brazil). Inst. de Quimica

2011-07-01

The individual detection and equimolar mixture of DNA nucleotides guanosine monophosphate (GMP), adenosine monophosphate (AMP), thymidine (TMP) and cytidine (CMP) 5'-monophosphate using square wave voltammetry was performed on boron doped diamond (BDD) electrodes cathodically (Red-DDB) and anodically (Oxi-DDB) pretreated. The oxidation of individual DNA nucleotides was more sensitive on Oxi-BDD electrode. In a simultaneous detection of nucleotides, the responses of GMP, AMP, TMP and CMP were very adequate on both treated electrodes. Particularly, more sensitive and separate peaks for TMP and CMP on Oxi-BDD and Red-BDD electrodes, respectively, were observed after deconvolution procedure. The detection of nucleotides in aqueous solutions will certainly contribute for genotoxic evaluation of substances and hybridization reactions by immobilizing ss or ds-DNA on BDD surface. (author)

Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

Science.gov (United States)

Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

2015-04-01

The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.

Controlling physical and chemical bonding of polypyrrole to boron doped diamond by surface termination

Czech Academy of Sciences Publication Activity Database

Ukraintsev, Egor; Kromka, Alexander; Janssen, W.; Haenen, K.; Rezek, Bohuslav

2013-01-01

Roč. 8, č. 1 (2013), s. 17-26 ISSN 1452-3981 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996 Grant - others:EU FP7 Marie Curie ITN MATCON(XE) PITN-GA-2009-238201 Institutional support: RVO:68378271 Keywords : electrochemical growth * polypyrrole * boron doped diamond * scanning electron microscopy * Kelvin force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.956, year: 2013 http://www.electrochemsci.org/papers/vol8/80100017.pdf

An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.

Science.gov (United States)

Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

2017-05-05

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

Indirect Voltammetric Sensing Platforms For Fluoride Detection on Boron-Doped Diamond Electrode Mediated via [FeF6]3− and [CeF6]2− Complexes Formation

International Nuclear Information System (INIS)

Culková, Eva; Tomčík, Peter; Švorc, Ľubomír; Cinková, Kristína; Chomisteková, Zuzana; Durdiak, Jaroslav; Rievaj, Miroslav; Bustin, Dušan

2014-01-01

Very simple and sensitive electroanalytical technique based on synergistic combination of reaction electrochemistry (specificity) and bare boron-doped diamond electrode (sensitivity) for the detection of fluorides in drinking water was developed as variant based on dynamic electrochemistry to ISE analysis. It is based on the formation of electroinactive fluoride complexes with Fe(III) and Ce(IV) ions decreasing such diffusion current of free metal on boron-doped diamond electrode. Due to low background signal of boron-doped diamond electrode reasonably low detection limits of the order of 10 −6 mol L −1 for linear sweep voltammetric method using formation of [FeF 6 ] 3− and 10 −7 mol L −1 in a square-wave variant of this technique have been achieved. This is approximately 1–2 orders lower than in the case of platinum comb-shaped interdigitated microelectrode array. Linear sweep voltammetric method based on [CeF 6 ] 2− complex formation has lower sensitivity and may be suitable for samples with higher content of fluoride and not to analysis of drinking water

Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

International Nuclear Information System (INIS)

Elsherif, O S; Vernon-Parry, K D; Evans-Freeman, J H; May, P W

2012-01-01

High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on the electronic states in polycrystalline chemical vapour deposition diamond thin films grown on silicon by the hot filament method. A combination of high-resolution LDLTS and direct-capture cross-sectional measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. Two hole traps, E1 (0.29 eV) and E2 (0.53 eV), were found in a film with a boron content of 1 × 10 19 cm −3 . Both these levels and an additional level, E3 (0.35 eV), were found when the B content was increased to 4 × 10 19 cm −3 . Direct capture cross-sectional measurements of levels E1 and E2 show an unusual dependence on the fill-pulse duration which is interpreted as possibly indicating that the levels are part of an extended defect. The E3 level found in the more highly doped film consisted of two closely spaced levels, both of which show point-like defect characteristics. The E1 level may be due to B-related extended defects within the grain boundaries, whereas the ionization energy of the E2 level is in agreement with literature values from ab initio calculations for B–H complexes. We suggest that the E3 level is due to isolated B-related centres in bulk diamond. (paper)

Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing

Energy Technology Data Exchange (ETDEWEB)

Hébert, Clément, E-mail: clement.hebert@cea.fr [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Warnking, Jan; Depaulis, Antoine [INSERM, U836, Grenoble Institut des Neurosciences, Grenoble (France); Garçon, Laurie Amandine [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); CEA/INAC/SPrAM/CREAB, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Mermoux, Michel [Université Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Eon, David [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Mailley, Pascal [CEA-LETI-DTBS Minatec, 17 rue des Martyres, 38054 Grenoble (France); Omnès, Franck [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

2015-01-01

Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. - Highlights: • Microfabrication of all-diamond microelectrode array • Evaluation of as-grown nanocrystalline boron-doped diamond for electrical neural interfacing • MRI compatibility of nanocrystalline boron-doped diamond.

Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

Directory of Open Access Journals (Sweden)

Orawon Chailapakul

2008-03-01

Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

Graphene grown out of diamond

Science.gov (United States)

Gu, Changzhi; Li, Wuxia; Xu, Jing; Xu, Shicong; Lu, Chao; Xu, Lifang; Li, Junjie; Zhang, Shengbai

2016-10-01

Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. This paper reports the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

Corrosion and Wear Behaviors of Cr-Doped Diamond-Like Carbon Coatings

Science.gov (United States)

Viswanathan, S.; Mohan, L.; Bera, Parthasarathi; Kumar, V. Praveen; Barshilia, Harish C.; Anandan, C.

2017-08-01

A combination of plasma-enhanced chemical vapor deposition and magnetron sputtering techniques has been employed to deposit chromium-doped diamond-like carbon (DLC) coatings on stainless steel, silicon and glass substrates. The concentrations of Cr in the coatings are varied by changing the parameters of the bipolar pulsed power supply and the argon/acetylene gas composition. The coatings have been studied for composition, morphology, surface nature, nanohardness, corrosion resistance and wear resistance properties. The changes in I D / I G ratio with Cr concentrations have been obtained from Raman spectroscopy studies. Ratio decreases with an increase in Cr concentration, and it has been found to increase at higher Cr concentration, indicating the disorder in the coating. Carbide is formed in Cr-doped DLC coatings as observed from XPS studies. There is a decrease in sp 3/ sp 2 ratios with an increase in Cr concentration, and it increases again at higher Cr concentration. Nanohardness studies show no clear dependence of hardness on Cr concentration. DLC coatings with lower Cr contents have demonstrated better corrosion resistance with better passive behavior in 3.5% NaCl solution, and corrosion potential is observed to move toward nobler (more positive) values. A low coefficient of friction (0.15) at different loads is observed from reciprocating wear studies. Lower wear volume is found at all loads on the Cr-doped DLC coatings. Wear mechanism changes from abrasive wear on the substrate to adhesive wear on the coating.

The water decomposition reactions on boron-doped diamond electrodes

International Nuclear Information System (INIS)

Suffredini, Hugo B.; Machado, Sergio A.S; Avaca, Luis A.

2004-01-01

The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD) electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol -1 , indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol -1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material. (author)

The water decomposition reactions on boron-doped diamond electrodes

Directory of Open Access Journals (Sweden)

Suffredini Hugo B

2004-01-01

Full Text Available The electrochemical processes occurring at both edges of the wide electrochemical window of the boron doped diamond (BDD electrode were studied by polarization curves experiments to evaluate the apparent energy of activation for the rate determining step in each reaction. It was found that the hydrogen evolution reaction occurs by a Volmer-Heyrovsky mechanism with the first step being the RDS. Moreover, the apparent energy of activation calculated from the Tafel plots presented a value as high as 150 kJ mol-1, indicating the formation of the M-H intermediate that is characteristic for the Volmer step. On the other hand, the apparent energy of activation for the oxygen evolution reaction was found to be 106 kJ mol-1 suggesting that the RDS in this mechanism is the initial adsorption step. In this way, it was demonstrated that the interaction between water molecules and the electrode surface is strongly inhibited on BDD thus justifying the extended potential window observed for this material.

Diamond nanophotonics

Directory of Open Access Journals (Sweden)

Katja Beha

2012-12-01

Full Text Available We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nitrogen–vacancy centers to plasmonic resonators, such as metallic nanoantennas. Improved photon-collection efficiency and directed emission is demonstrated by solid immersion lenses and micropillar cavities. Thereafter, the coupling of diamond nanocrystals to the guided modes of micropillar resonators is discussed along with experimental results. Finally, we present a gas-phase-doping approach to incorporate color centers based on nickel and tungsten, in situ into diamond using microwave-plasma-enhanced chemical vapor deposition. The fabrication of silicon–vacancy centers in nanodiamonds by microwave-plasma-enhanced chemical vapor deposition is discussed in addition.

Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode

International Nuclear Information System (INIS)

Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes

2012-01-01

This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L -1 Na 2 SO 4 solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

International Nuclear Information System (INIS)

Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

2016-01-01

Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue

Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Hébert, Clément, E-mail: clement.hebert@icn2.cat [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Cottance, Myline [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Degardin, Julie [INSERM, U968, Institut de la Vision, Paris (France); Scorsone, Emmanuel [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Rousseau, Lionel; Lissorgues, Gaelle [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Bergonzo, Philippe [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Picaud, Serge [INSERM, U968, Institut de la Vision, Paris (France)

2016-12-01

Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue.

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

2011-01-01

Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping

Czech Academy of Sciences Publication Activity Database

Alcaide, M.; Papaioannou, S.; Taylor, Andrew; Fekete, Ladislav; Gurevich, L.; Zachar, V.; Pennisi, C.P.

2016-01-01

Roč. 27, č. 5 (2016), s. 90-1-12 ISSN 0957-4530 R&D Projects: GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : protein adsorption * fibroblasts adhesion * nanocrystalline diamond * boron doping * topography Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.325, year: 2016

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

International Nuclear Information System (INIS)

Ray, Sekhar C.; Pong, W.F.; Papakonstantinou, P.

2016-01-01

The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp"3 network to sp"2 as evidenced by an increase of the sp"2 cluster and I_D/I_G ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp"2 cluster and I_D/I_G ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp"3-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp"3 and sp"2 contents are estimated from C K-edge XANES and VB-PES measurements.

Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

International Nuclear Information System (INIS)

Migliorini, F.L.; Braga, N.A.; Alves, S.A.; Lanza, M.R.V.; Baldan, M.R.; Ferreira, N.G.

2011-01-01

Highlights: → Electrochemical advanced oxidation process was studied using BDD based anodes with different boron concentrations. → The difference between the non-active and active anodes for organics degradation. → The influence of morphologic and structural properties of BDD electrodes on the RO-16 dye degradation. - Abstract: Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10 21 atoms cm -3 , respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman's spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 0 0). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process.

Fabrication and characterization of composite TiO{sub 2} nanotubes/boron-doped diamond electrodes towards enhanced supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Sobaszek, M. [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Siuzdak, K.; Sawczak, M. [Centre for Plasma and Laser Engineering, The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Faculty of Chemistry, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland)

2016-02-29

The composite TiO{sub 2} nanotubes/boron-doped diamond electrodes were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition resulting in the improved electrochemical performance. This composite electrode can deliver high specific capacitance of 7.46 mF cm{sup −2} comparing to boron-doped diamond (BDD) deposited onto flat Ti plate (0.11 mF cm{sup −2}).The morphology and composition of composite electrode were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS and Raman analyses, the structure of TiO{sub 2} was greatly changed during Chemical Vapor Deposition process: formation of Ti{sup 3+} sites, partial anatase to rutile transformation and titanium carbide phase formation. This effect is attributed to the simultaneous presence of activated hydrogen and carbon in the plasma leading to enhanced dehydration of NTs (nanotubes) followed by carbon bonding. The enhanced capacitive effect of TiO{sub 2} NT/BDD could be recognized as: (1) the unique synergistic morphology of NTs and BDD providing more efficient conducting pathway for the diffusion of ions and (2) partial decomposition of NTs and transformation towards to TiC and Ti{sub 2}O{sub 3} fractions. Finally, highly ordered titania nanotubes produced via simply, quick and controllable method — anodization, could act as promising substrate for conductive BDD layer deposition and further application of such composites for supercapacitor construction. - Highlights: • The TiO{sub 2} nanotube (NT)/diamond electrode delivers capacitance of 7.46 mF cm{sup −2}. • The NTs are not affected by diamond growth process and keep their pristine shape. • The BDD overlayer fully encapsulates TiO{sub 2} NTs exhibiting typical columnar growth. • The activated hydrogen and carbon in the plasma lead to enhanced dehydration of NTs. • The presence of TiC and Ti{sub 2}O{sub 3} fractions introducing additional capacitance.

Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

Directory of Open Access Journals (Sweden)

Yuan Yu

2012-01-01

Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

Energy Technology Data Exchange (ETDEWEB)

Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

2010-02-01

An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

Fabrication of cone-shaped boron doped diamond and gold nanoelectrodes for AFM-SECM

Energy Technology Data Exchange (ETDEWEB)

Avdic, A; Lugstein, A; Bertagnolli, E [Solid State Electronics Institute, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Wu, M; Gollas, B [Competence Centre for Electrochemical Surface Technology, Viktor Kaplan Strasse 2, 2700 Wiener Neustadt (Austria); Pobelov, I; Wandlowski, T [Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, 3012 Bern (Switzerland); Leonhardt, K; Denuault, G, E-mail: alois.lugstein@tuwien.ac.at [School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom)

2011-04-08

We demonstrate a reliable microfabrication process for a combined atomic force microscopy (AFM) and scanning electrochemical microscopy (SECM) measurement tool. Integrated cone-shaped sensors with boron doped diamond (BDD) or gold (Au) electrodes were fabricated from commercially available AFM probes. The sensor formation process is based on mature semiconductor processing techniques, including focused ion beam (FIB) machining, and highly selective reactive ion etching (RIE). The fabrication approach preserves the geometry of the original AFM tips resulting in well reproducible nanoscaled sensors. The feasibility and functionality of the fully featured tips are demonstrated by cyclic voltammetry, showing good agreement between the measured and calculated currents of the cone-shaped AFM-SECM electrodes.

Influence of boron content on the morphological, spectral, and electroanalytical characteristics of anodically oxidized boron-doped diamond electrodes

Czech Academy of Sciences Publication Activity Database

Schwarzová-Pecková, K.; Vosáhlová, J.; Barek, J.; Šloufová, I.; Pavlova, Ewa; Petrák, Václav; Zavázalová, J.

2017-01-01

Roč. 243, 20 July (2017), s. 170-182 ISSN 0013-4686 R&D Projects: GA TA ČR(CZ) TE01020118 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : 2-aminobiphenyl * boron content * boron-doped diamond Subject RIV: CD - Macromolecular Chemistry; CG - Electrochemistry (FZU-D) OBOR OECD: Polymer science; Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (FZU-D) Impact factor: 4.798, year: 2016

CE with a boron-doped diamond electrode for trace detection of endocrine disruptors in water samples.

Science.gov (United States)

Browne, Damien J; Zhou, Lin; Luong, John H T; Glennon, Jeremy D

2013-07-01

Off-line SPE and CE coupled with electrochemical detection have been used for the determination of bisphenol A (BPA), bisphenol F, 4-ethylphenol, and bisphenol A diglycidyl ether in bottled drinking water. The use of boron-doped diamond electrode as an electrochemical detector in amperometric mode that provides a favorable analytical performance for detecting these endocrine-disrupting compounds, such as lower noise levels, higher peak resolution with enhanced sensitivity, and improved resistance against electrode passivation. The oxidative electrochemical detection of the endocrine-disrupting compounds was accomplished by boron-doped diamond electrode poised at +1.4 V versus Ag/AgCl without electrode pretreatment. An off-line SPE procedure (Bond Elut® C18 SPE cartridge) was utilized to extract and preconcentrate the compounds prior to separation and detection. The minimum concentration detectable for all four compounds ranged from 0.01 to 0.06 μM, having S/N equal to three. After exposing the plastic bottle water container under sunlight for 7 days, the estimated concentration of BPA in the bottled drinking water was estimated to be 0.03 μM. This proposed approach has great potential for rapid and effective determination of BPA content present in water packaging of plastic bottles that have been exposed to sunlight for an extended period of time. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymerisation occurrence in the anodic oxidation of phosphite on a boron-doped diamond electrode

International Nuclear Information System (INIS)

Petrucci, Elisabetta; Montanaro, Daniele; Merli, Carlo

2008-01-01

The electrogeneration of polymeric phosphorus compounds during the anodic oxidation of aqueous solutions of phosphites on a boron-doped diamond electrode has been studied. Although the main oxidation product is orthophosphate, the results indicate the simultaneous generation of short-chain and cyclic compounds containing two and three phosphorus atoms whose evolution has been followed by ion chromatography. The effect on the reaction yield of several operative parameters such as current density, pH, temperature and initial phosphite concentration has been investigated. Consistently with the data presented, a new process for the generation of polymeric phosphates is obtained

Fabrication of porous boron-doped diamond on SiO.sub.2./sub. fiber templates

Czech Academy of Sciences Publication Activity Database

Petrák, Václav; Vlčková Živcová, Zuzana; Krýsová, Hana; Frank, Otakar; Zukal, Arnošt; Klimša, Ladislav; Kopeček, Jaromír; Taylor, Andrew; Kavan, Ladislav; Mortet, Vincent

2017-01-01

Roč. 114, Jan (2017), s. 457-464 ISSN 0008-6223 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR GA13-31783S Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568; AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 ; RVO:61388955 Keywords : boron-doped diamond * electrochemical properties Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 6.337, year: 2016

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Improved stability of titanium based boron-doped chemical vapor deposited diamond thin-film electrode by modifying titanium substrate surface

International Nuclear Information System (INIS)

Lim, P.Y.; Lin, F.Y.; Shih, H.C.; Ralchenko, V.G.; Varnin, V.P.; Pleskov, Yu.V.; Hsu, S.F.; Chou, S.S.; Hsu, P.L.

2008-01-01

The film quality and electrochemical properties of BDD (boron-doped diamond) thin films grown by hot-filament chemical vapor deposition technique on titanium substrates that had been subjected to a range of pre-treatment processes were evaluated. The pre-roughened Ti-substrates are shown to support more adherent BDD films. It is evident that acid-etching the Ti-substrate involves surface hydrogenation that enhances nucleation and formation of diamond thereon. The prepared BDD film exhibits wide potential window and electrochemical reversibility. It also demonstrated a better long-term electrochemical stability based on the low variation in voltametric background current upon the exposing of the electrodes to repeated cycles of electrochemical metal deposition/stripping process

Modification of GaN(0001) growth kinetics by Mg doping

International Nuclear Information System (INIS)

Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

2004-01-01

We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

Substitutional Boron in Nanodiamond, Bucky-Diamond, and Nanocrystalline Diamond Grain Boundaries

Energy Technology Data Exchange (ETDEWEB)

Barnard, Amanda S.; Sternberg, Michael G.

2006-10-05

Although boron has been known for many years to be a successful dopant in bulk diamond, efficient doping of nanocrystalline diamond with boron is still being developed. In general, the location, configuration, and bonding structure of boron in nanodiamond is still unknown, including the fundamental question of whether it is located within grains or grain boundaries of thin films and whether it is within the core or at the surface of nanoparticles. Presented here are density functional tight-binding simulations examining the configuration, potential energy surface, and electronic charge of substitutional boron in various types of nanocrystalline diamond. The results predict that boron is likely to be positioned at the surface of isolated particles and at the grain boundary of thin-film samples.

Physics and applications of CVD diamond

CERN Document Server

Koizumi, Satoshi; Nesladek, Milos

2008-01-01

Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs.Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is e

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

Energy Technology Data Exchange (ETDEWEB)

Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

2016-07-01

The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp{sup 3} network to sp{sup 2} as evidenced by an increase of the sp{sup 2} cluster and I{sub D}/I{sub G} ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp{sup 2} cluster and I{sub D}/I{sub G} ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp{sup 3}-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp{sup 3} and sp{sup 2} contents are estimated from C K-edge XANES and VB-PES measurements.

Study of the effects of focused high-energy boron ion implantation in diamond

Science.gov (United States)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

Czech Academy of Sciences Publication Activity Database

Vlčková Živcová, Zuzana; Frank, Otakar; Petrák, Václav; Tarábková, Hana; Vacík, Jiří; Nesládek, M.; Kavan, Ladislav

2013-01-01

Roč. 87, JAN 2013 (2013), s. 518-525 ISSN 0013-4686 R&D Projects: GA AV ČR IAA400400804; GA AV ČR KAN200100801 Grant - others:European Commission CORDIS(XE) FP7-ENERGY-2010-FET, projekt 256617 Institutional support: RVO:61389005 ; RVO:61388955 ; RVO:68378271 Keywords : boron doped diamond * electrochemistry * aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 4.086, year: 2013

Gas Permeation, Mechanical Behavior and Cytocompatibility of Ultrathin Pure and Doped Diamond-Like Carbon and Silicon Oxide Films

Directory of Open Access Journals (Sweden)

Juergen M. Lackner

2013-12-01

Full Text Available Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was a benchmarking of the mechanical oxygen permeation barrier, cytocompatibility, and microbiological properties of inorganic ~25 nm thin films, deposited by vacuum deposition techniques on 50 µm thin polyetheretherketone (PEEK foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source was applied to deposit pure and nitrogen doped diamond-like carbon films, while physical vapor deposition (magnetron sputtering in pulsed DC mode was used for the formation of silicon as well as titanium doped diamond-like carbon films. Silicon oxide films were deposited by radio frequency magnetron sputtering. The results indicate a strong influence of nanoporosity on the oxygen transmission rate for all coating types, while the low content of microporosity (particulates, etc. is shown to be of lesser importance. Due to the low thickness of the foil substrates, being easily bent, the toughness as a measure of tendency to film fracture together with the elasticity index of the thin films influence the oxygen barrier. All investigated coatings are non-pyrogenic, cause no cytotoxic effects and do not influence bacterial growth.

Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

McEvoy, James P. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Foord, John S. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom)]. E-mail: john.foord@chem.ox.ac.uk

2005-05-05

Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China){sub 6} {sup 3-} and Ru(NH{sub 3}){sub 6} {sup 3+}, and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction.

Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

International Nuclear Information System (INIS)

McEvoy, James P.; Foord, John S.

2005-01-01

Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China) 6 3- and Ru(NH 3 ) 6 3+ , and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction

Electrochemical incineration of chloromethylphenoxy herbicides in acid medium by anodic oxidation with boron-doped diamond electrode

International Nuclear Information System (INIS)

Boye, Birame; Brillas, Enric; Marselli, Beatrice; Michaud, Pierre-Alain; Comninellis, Christos; Farnia, Giuseppe; Sandona, Giancarlo

2006-01-01

The electrochemical degradation of saturated solutions of herbicides 4-chloro-2-methylphenoxyacetic acid, 2-(4-chlorophenoxy)-2-methylpropionic acid and 2-(4-chloro-2-methylphenoxy)propionic acid in 1 M HClO 4 on a boron-doped diamond (BDD) thin film anode has been studied by chronoamperometry, cyclic voltammetry and bulk electrolysis. At low anodic potentials polymeric products are formed causing the fouling and deactivation of BDD. This is reactivated at high potentials when water decomposes producing hydroxyl radical as strong oxidant of organics. Electrolyses in a batch recirculation system at constant current density ≥8 mA cm -2 yielded overall decontamination of all saturated solution. The effect of current density and herbicide concentration on the degradation rate of each compound, the specific charge required for its total mineralization and instantaneous current efficiency have been investigated. Experimental results have been compared with those predicted by a theoretical model based on a fast anodic oxidation of initial herbicides, showing that at 30 mA cm -2 their degradation processes are completely controlled by mass transfer. Kinetic analysis of the change of herbicide concentration with time during electrolysis, determined by high-performance liquid chromatography, revealed that all compounds follow a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids have been identified using this technique and a general pathway for the electrochemical incineration of all herbicides on BDD is proposed

H-terminated polycrystalline boron doped diamond electrode for geochemical sensing into underground components of nuclear repositories

International Nuclear Information System (INIS)

Boussadi, A.; Betelu, S.; Ignatiadis, I.; Silva, F.

2012-01-01

Document available in extended abstract form only. Nuclear waste repositories are being installed in deep excavated rock formations in some places in Europe to isolate and store radioactive waste. In France, Callovo-Oxfordian formation (COx) is potential candidate for nuclear waste repository. It is thus necessary to measure in situ the state of a structure's health during its entire life. The monitoring of the near-field rock and the knowledge of the geochemical transformations can be carried out by a set of sensors for a sustainable management of long-term safety, reversibility and retrievability. Among the chemical parameters, the most significant are pH, conductivity and redox potential. Wide band gap semiconductors are favored materials for chemical sensing because of their high stability to many chemical agents. Among the wide band gap materials, Chemical Vapor Deposition (CVD) boron doped diamond (BDD) benefits from a large band gap, which gives rise to a wide electrochemical potential window. It is moreover described as a radiation, corrosion and bio-corrosion resistant. These remarkable properties, in addition to a low double layer capacity and a low residual current, make BDD a promising material for geochemical sensor elaboration. This work aimed to investigate BDD- based electrodes coated with p-type polycrystalline BDD-hydrogen- terminated surfaces (1 cm 2 ) for pH and/or redox measurements into the underground components of nuclear repositories. The boron-doped p-type channel was grown in a microwave plasma reactor (BJS 150). The boron-doped channel was hydrogen terminated by a hydrogen plasma treatment in the CVD reactor, resulting in full saturation of the surface carbon bonds with hydrogen atoms. Scanning Electron Microscopy (SEM) of the polycrystalline BDD coating with a Bore/Carbon ratio of 500 ppm shows the typical columnar growth of the polycrystalline CVD diamond. A homogeneous surface was observed concerning the crystallite size which average

Efficiency and stability of spectral sensitization of boron-doped-diamond electrodes through covalent anchoring of a donor–acceptor organic chromophore (P1)

Czech Academy of Sciences Publication Activity Database

Krýsová, Hana; Bartoň, Jan; Petrák, Václav; Jurok, R.; Kuchař, M.; Cígler, Petr; Kavan, Ladislav

2016-01-01

Roč. 18, č. 24 (2016), s. 16444-16450 ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : dye-sensitized solar cells * boron-doped diamond * nanoscale Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.123, year: 2016

Conductivity and superconductivity in heavily vacant diamond

Directory of Open Access Journals (Sweden)

S A Jafari

2009-08-01

Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

Doping kinetics of organic semiconductors investigated by field-effect transistors

NARCIS (Netherlands)

Maddalena, F.; Meijer, E.J.; Asadi, K.; Leeuw, D.M. de; Blom, P.W.M.

2010-01-01

The kinetics of acid doping of the semiconductor regioregular poly-3-hexylthiophene with vaporized chlorosilane have been investigated using field-effect transistors. The dopant density has been derived as a function of temperature and exposure time from the shift in the pinch-off voltage, being the

Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

International Nuclear Information System (INIS)

Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

2016-01-01

The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L"−"1, with a detection limit of 0.065 μmol L"−"1. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ

Electrochemical treatment of phenolic waters in presence of chloride with boron-doped diamond (BDD) anodes: Experimental study and mathematical model

International Nuclear Information System (INIS)

Mascia, Michele; Vacca, Annalisa; Polcaro, Anna Maria; Palmas, Simonetta; Ruiz, Jesus Rodriguez; Da Pozzo, Anna

2010-01-01

This work deals with an experimental and numerical study on the electrochemical treatment of waters containing phenolic compounds with boron-doped diamond (BDD) anodes. Anodic oxidation of m-cresol, as a model of phenolic compound, was investigated by galvanostatic electrolyses. The electrolyses were carried out under different experimental conditions by using an impinging-jet flow cell inserted in a hydraulic circuit in a closed loop. On the basis of the experimental results a mathematical model was implemented to simulate the effect of the chemistry of organic compounds and solution on the process, in particular the effect of chlorides on the kinetics of m-cresol oxidation. The effect of hydrodynamics of the cell on the mass transfer towards the electrode surface was also considered. The model was validated through comparison with experimental data: the results showed that the proposed model well interpreted the complex effect on removal efficiency of such operative parameters as current density, hydrodynamic of the reactor and chemistry of the solution. The model predictions were utilised to obtain quantitative information on the reaction mechanism, as well as to predict the performance of the process under different operative conditions, by calculating some relevant figures of merit.

Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Limat, Meriadec; El Roustom, Bahaa [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland); Jotterand, Henri [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Physics of the Complex Matter, CH-1015 Lausanne (Switzerland); Foti, Gyoergy [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)], E-mail: gyorgy.foti@epfl.ch; Comninellis, Christos [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)

2009-03-30

A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate.

Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

International Nuclear Information System (INIS)

Limat, Meriadec; El Roustom, Bahaa; Jotterand, Henri; Foti, Gyoergy; Comninellis, Christos

2009-01-01

A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate

In vivo pH monitoring using boron doped diamond microelectrode and silver needles: Application to stomach disorder diagnosis

OpenAIRE

Fierro, St?phane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

2013-01-01

This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the result...

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

Science.gov (United States)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.

Science.gov (United States)

Lee, Tae Hoon; Loke, Desmond; Elliott, Stephen R

2015-10-07

A comprehensive microscopic mechanism of doping-induced kinetically constrained crystallization in phase-change materials is provided by investigating structural and dynamical dopant characteristics via ab initio molecular dynamics simulations. The information gained from this study may provide a basis for a fast screening of dopant species for electronic memory devices, or for understanding the general physics involved in the crystallization of doped glasses. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

CERN Document Server

He, X M; Peters, A M; Taylor, B; Nastasi, M

2002-01-01

Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

Thermoluminescence kinetic parameters of different amount La-doped ZnB2O4

International Nuclear Information System (INIS)

Kucuk, Nil; Gozel, Aziz Halit; Yüksel, Mehmet; Dogan, Tamer; Topaksu, Mustafa

2015-01-01

The kinetic parameters of 1%, 2%, 3% and 4% La-doped ZnB 2 O 4 phosphors (i.e. ZnB 2 O 4 :0.01La, ZnB 2 O 4 :0.02La, ZnB 2 O 4 :0.03La and ZnB 2 O 4 :0.04La) synthesized by nitric acid method have been calculated. Thermoluminescence (TL) glow curves of ZnB 2 O 4 :La phosphors after beta-irradiation showed a very well defined main peak having the maximum temperature at around 200 °C and a shoulder peak at around 315 °C with a constant heating rate of 5 °C/s. The kinetic parameters of ZnB 2 O 4 :La phosphors TL glow peaks (i.e. order of kinetics (b), activation energies (E a ) and frequency factors (s)) have been determined and evaluated by Computerized Glow Curve Deconvolution (CGCD), and Peak Shape (PS) methods using the glow curve data. From the results, it can conclude that the values of E a obtained with these methods for ZnB 2 O 4 :La phosphors are consistent with each other, but the s values differ considerably. - Highlights: • Calculation of TL kinetic parameters for La-doped ZnB 2 O 4 . • La-doped ZnB 2 O 4 was synthesized by nitric acid method. • Well defined main peak at about 200 °C

Study of Electrochemical Oxidation and Quantification of the Pesticide Pirimicarb Using a Boron-Doped Diamond Electrode

International Nuclear Information System (INIS)

Selva, Thiago Matheus Guimarães; De Araujo, William Reis; Bacil, Raphael Prata; Paixão, Thiago Regis Longo Cesar

2017-01-01

Highlights: •A complete electro-oxidation mechanism of the pesticide Pirimicarb was proposed. •The electrochemical mechanism was supported by voltammetry techniques and mass spectrometry data. •An electroanalytical method using boron-doped diamond electrode was proposed to quantify Pirimicarb in natural waters. •The proposed analytical method is simple, low-cost, accurate and portable. -- Abstract: An electrochemical study of the carbamate pesticide pirimicarb (PMC), which acts on the central nervous system, was performed using a boron-doped diamond working electrode. Cyclic, differential pulse, and square-wave voltammetry experiments across a wide pH range (2.0 to 8.0) showed three irreversible oxidation processes in the voltammetric behavior of PMC. The two first processes were pH-dependent, while the third was not. The three oxidation process were independent of each other, and each involved the transfer of one electron. A reaction proposal for the electrochemical oxidation of PMC is shown, and it is supported by mass spectrometry experiments. After this, an analytical method for PMC quantification in water samples by differential pulse (DP) voltammetry is proposed. The optimal DP voltammetric parameters (step potential, amplitude potential, and scan rate) were optimized using experimental design, and an analytical curve was obtained from 2.0 to 219 μmol L −1 with an estimated detection limit of 1.24 μmol L −1 . The accuracy of the proposed method was evaluated by the addition and recovery method, with recoveries ranging from 88.6 to 96.3%. Some highlights of the proposed analytical method are its simplicity, reliability, and portability.

Simultaneous detection of iodine and iodide on boron doped diamond electrodes.

Science.gov (United States)

Fierro, Stéphane; Comninellis, Christos; Einaga, Yasuaki

2013-01-15

Individual and simultaneous electrochemical detection of iodide and iodine has been performed via cyclic voltammetry on boron doped diamond (BDD) electrodes in a 1M NaClO(4) (pH 8) solution, representative of typical environmental water conditions. It is feasible to compute accurate calibration curve for both compounds using cyclic voltammetry measurements by determining the peak current intensities as a function of the concentration. A lower detection limit of about 20 μM was obtained for iodide and 10 μM for iodine. Based on the comparison between the peak current intensities reported during the oxidation of KI, it is probable that iodide (I(-)) is first oxidized in a single step to yield iodine (I(2)). The latter is further oxidized to obtain IO(3)(-). This technique, however, did not allow for a reasonably accurate detection of iodate (IO(3)(-)) on a BDD electrode. Copyright © 2012 Elsevier B.V. All rights reserved.

Friction between silicon and diamond at the nanoscale

International Nuclear Information System (INIS)

Bai, Lichun; Srikanth, Narasimalu; Sha, Zhen-Dong; Pei, Qing-Xiang; Wang, Xu; Srolovitz, David J; Zhou, Kun

2015-01-01

This work investigates the nanoscale friction between diamond-structure silicon (Si) and diamond via molecular dynamics simulation. The interaction between the interfaces is considered as strong covalent bonds. The effects of load, sliding velocity, temperature and lattice orientation are investigated. Results show that the friction can be divided into two stages: the static friction and the kinetic friction. During the static friction stage, the load, lattice orientation and temperature dramatically affects the friction by changing the elastic limit of Si. Large elastic deformation is induced in the Si block, which eventually leads to the formation of a thin layer of amorphous Si near the Si-diamond interface and thus the beginning of the kinetic friction stage. During the kinetic friction stage, only temperature and velocity have an effect on the friction. The investigation of the microstructural evolution of Si demonstrated that the kinetic friction can be categorized into two modes (stick-slip and smooth sliding) depending on the temperature of the fracture region. (paper)

Photoassisted electrochemical recirculation system with boron-doped diamond anode and carbon nanotubes containing cathode for degradation of a model azo dye

International Nuclear Information System (INIS)

Vahid, Behrouz; Khataee, Alireza

2013-01-01

In this research work, a photoassisted electrochemical system under recirculation mode and with UV irradiation was designed for treatment of C.I. Acid Blue 92 (AB92) as a model anionic azo dye in aqueous solution. Degradation experiments were carried out with boron-doped diamond (BDD) anode and carbon nanotubes-polytetrafluoroethylene (CNTs-PTFE) cathode in the presence of sulfate as an electrolyte. A comparative study of AB92 degradation by photolysis, electrochemical oxidation and photoassisted electrochemical processes after 45 min of treatment demonstrated that degradation efficiency was 27.89, 37.65 and 95.86%, respectively. Experimental data revealed that the degradation rate of AB92 in all of the processes obeyed pseudo-first-order kinetics and application of photoassisted electrochemical system reduced electrical energy per order (E EO ), considerably. Degradation efficiency of photoassisted electrochemical process enhanced by increasing applied current and flow rate values, but vice versa trend was observed for initial dye concentration and an optimum amount of 6 was obtained for initial pH. The TOC measurement results demonstrated that 93.24% of organic substrates were mineralized after 120 min of photoassisted electrochemical process and GC–Mass analysis was performed for identification of degradation intermediates

Electroreduction of CO{sub 2} using copper-deposited on boron-doped diamond (BDD)

Energy Technology Data Exchange (ETDEWEB)

Panglipur, Hanum Sekar; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan); Wibowo, Rahmat

2016-04-19

Electroreduction of CO{sub 2} was studied at copper-modified boron-doped diamond (Cu-BDD) electrodes as the working electrode. The Cu-BDD electrodes were prepared by electrochemical reduction with various concentrations of CuSO{sub 4} solutions. FE-SEM was utilized to characterize the electrodes. At Cu-BDD electrodes, a reduction peak at around -1.2 V (vs Ag/AgCl) attributtable to CO{sub 2} reductions could be observed by cyclic voltammetry technique of CO{sub 2} bubbled in water containing 0.1M NaCl. Accordingly, electroreduction of CO{sub 2} was conducted at -1.2 V (vs Ag/AgCl) using amperometry technique. The chemical products of the electroreduction analyzed by using HPLC showed the formation of formaldehyde, formic acid, and acetic acid at Cu-BDD electrodes.

Monitoring of peptide induced disruption of artificial lipid membrane constructed on boron-doped nanocrystalline diamond by electrochemical impedance spectroscopy

Czech Academy of Sciences Publication Activity Database

Petrák, V.; Grieten, L.; Taylor, Andrew; Fendrych, František; Ledvina, Miroslav; Janssens, S. D.; Nesládek, M.; Haenen, K.; Wagner, P.

2011-01-01

Roč. 208, č. 9 (2011), s. 2099-2103 ISSN 1862-6300 R&D Projects : GA AV ČR KAN200100801; GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LD11076 Grant - others:European RD projects (XE) 238201-MATCON Institutional research plan: CEZ:AV0Z40550506; CEZ:AV0Z10100520 Keywords : biosensor * boron-doped nanocrystalline diamond * electrochemical impedance spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.463, year: 2011

Fabrication and electrochemistry characteristics of nickel-doped diamond-like carbon film toward applications in non-enzymatic glucose detection

Science.gov (United States)

Liu, Chi-Wen; Chen, Wei-En; Sun, Yin Tung Albert; Lin, Chii-Ruey

2018-04-01

This research work focused on the fabrication of nickel-doped diamond-like carbon (DLC) films and their characteristics including of surface morphology, microstructure, and electrochemical aiming at applications in non-enzymatic glucose detection. Novel nanodiamond target was employed in unbalanced magnetron radio-frequency co-sputtering process to prepared high quality Ni-doped DLC thin film at room temperature. TEM analysis reveals a highly uniform distribution of Ni crystallites in amorphous carbon matrix with fraction ranged from 3 to 11.5 at.% which is considered as active sites for the glucose detection. Our cyclic voltammetry measurements using 0.1 M H2SO4 solution demonstrated that the as-prepared Ni-doped DLC films possess large electrochemical potential window of 2.12 V, and this was also observed to be significantly reduced at high Ni doping level owing to lower sp3 fraction. The non-enzymatic glucose detection investigation indicates that the Ni-doped DLC thin film electrode prepared under 7 W of DC sputtering power on Ni target possesses good detecting performance, high stability, and high sensitivity to glucose concentration up to 10 mM, even with the existence of uric acid and ascorbic acid. The peak current was observed to be proportional to glucose concentration and scanning rate, demonstrating highly reversibility redox process of the film electrode and glucose.

Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

Energy Technology Data Exchange (ETDEWEB)

Ammar, Hafedh Belhadj, E-mail: hbelhadjammar@yahoo.fr; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

2016-02-01

The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L{sup −1}, with a detection limit of 0.065 μmol L{sup −1}. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ.

Kinetically Inhibited Order in a Diamond-Lattice Antiferromagnet

International Nuclear Information System (INIS)

MacDougall, Gregory J.; Gout, Delphine J.; Zarestky, Jerel L.; Ehlers, Georg; Podlesnyak, Andrey A.; McGuire, Michael A.; Mandrus, David; Nagler, Stephen E.

2011-01-01

Frustrated magnetic systems exhibit highly degenerate ground states and strong fluctuations, often leading to new physics. An intriguing example of current interest is the antiferromagnet on a diamond lattice, realized physically in the A-site spinel materials. This is a prototypical system in three dimensions where frustration arises from competing interactions rather than purely geometric constraints, and theory suggests the possibility of novel order at low temperature. Here we present a comprehensive single crystal neutron scattering study CoAl2O4, a highly frustrated A-site spinel. We observe strong diffuse scattering that peaks at wavevectors associated with Neel ordering. Below the temperature T*=6.5K, there is a dramatic change in elastic scattering lineshape accompanied by the emergence of well-defined spin-wave excitations. T* had previously been associated with the onset of glassy behavior. Our new results suggest instead that in fact T* signifies a first-order phase transition, but with true long-range order inhibited by the kinetic freezing of domain walls. This scenario might be expected to occur widely in frustrated systems containing first-order phase transitions and is a natural explanation for existing reports of anomalous glassy behavior in other materials.

Mg doping and its effect on the semipolar GaN(1122) growth kinetics

International Nuclear Information System (INIS)

Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

2009-01-01

We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

Potential and pH dependence of photocurrent transients for boron-doped diamond electrodes in aqueous electrolyte

International Nuclear Information System (INIS)

Green, S.J.; Mahe, L.S.A.; Rosseinsky, D.R.; Winlove, C.P.

2013-01-01

Using illumination at energies below the intrinsic diamond energy gap, photocurrent transients have been recorded for boron-doped diamond (BDD) as an electrode in an aqueous electrolyte of 0.1 M KH 2 PO 4 . The commercially-supplied BDD was in the form of a free-standing, polycrystalline film grown by chemical vapour deposition (CVD), with a boron acceptor concentration of ≥10 20 cm −3 . The effects of mechanical polishing of the BDD, of electrochemical hydrogen evolution and of electrochemical oxygen evolution (in 0.1 M KH 2 PO 4 ), on the potential dependence of the photocurrent transients have been examined. Measurements of the cathodic photocurrent at light switch-on have been used to determine the photocurrent onset potential as a measure of the flatband potential. Comparison with and between related literature observations has shown broad agreement across considerably varying BDD/electrolyte systems. The flatband potential shifted positively following electrochemical oxygen evolution, indicating the formation of oxygen-containing groups on the diamond surface, these increasing the potential drop across the Helmholtz layer. For the electrochemically oxidised electrode, the cathodic photocurrent transient at a fixed potential changed reproducibly with changing solution pH, owing to the participation of the oxygen-containing surface groups in acid–base equilibrium with the solution. This clear demonstration of BDD as a photoelectrochemical pH sensor is in principle extendable to mapping the spatial variation in pH across a BDD surface by use of a focussed light spot

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

Science.gov (United States)

Halpern, Jeffrey M; Martin, Heidi B

2014-02-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

Electrochemical degradation of some herbicides in aqueous solution on boron doped diamond anodes

International Nuclear Information System (INIS)

Zaouak, Amira; Dachraoui, Mohamed; Matoussi, Fatma

2009-01-01

Bifenox(a) and acifluorfen(b), respectively (Methyl 5-(2,4-dichlorophenoxy)-2-nitrobenzoate and 5-(2-Chloro-4-trifluoro methylphenoxy)-2-nitrobenzoic acid, are two highly toxic herbicides of the diphenyl ether class. They are widely used in agriculture. Their electrochemical oxidation behaviour is studied by cyclic voltammetry in various media with different electrodes. When galvanostatic electrolysis is realized on Boron Doped Diamond electrode (BDD) we observe that the studied contaminants undergo an almost complete degradation due to hydroxy radical action as commonly suggested. The rate of the mineralization is followed by spectrophotometric analysis and COD measurements. The optimization of this advanced oxidation process is studied as a function of the current density. It shows that the best results are obtained with low current densities. The obtained COD abatement values are superior to 90 pour cent.

Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

Directory of Open Access Journals (Sweden)

Xiaowei Li

2015-01-01

Full Text Available Structure and properties of Cu-doped diamond-like carbon films (DLC were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.% on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

Fabrication of a Microfluidic Device with Boron-doped Diamond Electrodes for Electrochemical Analysis

International Nuclear Information System (INIS)

Watanabe, Takeshi; Shibano, Shuhei; Maeda, Hideto; Sugitani, Ai; Katayama, Michinobu; Matsumoto, Yoshinori; Einaga, Yasuaki

2016-01-01

A prototype microfluidic device using boron-doped diamond (BDD) electrodes patterned on an alumina chip was designed and fabricated. Electrochemical microfluidic devices have advantages in that the amount of sample required is small, the measurement throughput is high, different functions can be integrated on a single device, and they are highly durable. In using the device for the flow injection analysis of oxalic acid, the application of a brief conditioning step ensured that the reproducibility of the current signal was excellent. Furthermore, the fabricated system also performed as a prototype of “elimination-detection flow system”, in which interfering species are eliminated using “elimination electrodes” prior to the species reaching the “detection electrode”. The fabricated device reduced the current due to interfering species by 78%. Designs of devices to improve this efficiency are also discussed.

Grain growth kinetics for B2O3-doped ZnO ceramics

Directory of Open Access Journals (Sweden)

Yuksel Berat

2015-06-01

Full Text Available Grain growth kinetics in 0.1 to 2 mol % B2O3-added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation Gn = K0 · t · exp(-Q/RT together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250 °C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n and the activation energy for the grain growth of the 0.1 mol % B2O3-doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B2O3 content to 1 mol %, the grain growth exponent value (n and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn3B2O6 formed when the B2O3 content was > 1 mol %. The formation of Zn3B2O6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n and the activation energy for the grain growth of the 2 mol % B2O3-doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning mechanism in the liquid phase sintering.

[Influence of deposition time on chromatics during nitrogen-doped diamond like carbon coating on pure titanium].

Science.gov (United States)

Yin, Lu; Yao, Jiang-wu; Xu, De-wen

2010-10-01

The aim of this study was to observed the influence of deposition time on chromatics during nitrogen-doped diamond like carbon coating (N-DLC) on pure titanium by multi impulse are plasma plating machine. Applying multi impulse are plasma plating machine to produce TiN coatings on pure titanium in nitrogen atmosphere, then filming with nitrogen-doped DLC on TiN in methane (10-80 min in every 5 min). The colors of N-DLC were evaluated in the CIE1976 L*a*b* uniform color scale and Mussell notation. The surface morphology of every specimen was analyzed using scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). When changing the time of N-DLC coating deposition, N-DLC surface showed different color. Golden yellow was presented when deposition time was 30 min. SEM showed that crystallization was found in N-DLC coatings, the structure changed from stable to clutter by varying the deposition time. The chromatics of N-DLC coatings on pure titanium could get golden yellow when deposition time was 30 min, then the crystallized structure was stable.

Properties of planar structures based on Policluster films of diamond and AlN

Science.gov (United States)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Benzene oxidation at diamond electrodes: comparison of microcrystalline and nanocrystalline diamonds.

Science.gov (United States)

Pleskov, Yu V; Krotova, M D; Elkin, V V; Varnin, V P; Teremetskaya, I G; Saveliev, A V; Ralchenko, V G

2012-08-27

A comparative study of benzene oxidation at boron-doped diamond (BDD) and nitrogenated nanocrystalline diamond (NCD) anodes in 0.5 M K(2)SO(4) aqueous solution is conducted by using cyclic voltammetry and electrochemical impedance spectroscopy. It is shown by measurements of differential capacitance and anodic current that during the benzene oxidation at the BDD electrode, adsorption of a reaction intermediate occurs, which partially blocks the electrode surface and lowers the anodic current. At the NCD electrode, benzene is oxidized concurrently with oxygen evolution, a (quinoid) intermediate being adsorbed at the electrode. The adsorption and the electrode surface blocking are reflected in the impedance-frequency and impedance-potential complex-plane plots. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High sensitivity thermal sensors on insulating diamond

Energy Technology Data Exchange (ETDEWEB)

Job, R. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Denisenko, A.V. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Zaitsev, A.M. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Melnikov, A.A. [Belarussian State Univ., Minsk (Belarus). HEII and FD; Werner, M. [VDI/VDE-IT, Teltow (Germany); Fahrner, W.R. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices

1996-12-15

Diamond is a promising material to develop sensors for applications in harsh environments. To increase the sensitivity of diamond temperature sensors the effect of thermionic hole emission (TE) over an energetic barrier formed in the interface between highly boron-doped p-type and intrinsic insulating diamond areas has been suggested. To study the TE of holes a p-i-p diode has been fabricated and analyzed by electrical measurements in the temperature range between 300 K and 700 K. The experimental results have been compared with numerical simulations of its electrical characteristics. Based on a model of the thermionic emission of carriers into an insulator it has been suggested that the temperature sensitivity of the p-i-p diode on diamond is strongly affected by the re-emission of holes from a group of donor-like traps located at a level of 0.7-1.0 eV above the valence band. The mechanism of thermal activation of the current includes a spatial redistribution of the potential, which results in the TE regime from a decrease of the immobilized charge of the ionized traps within the i-zone of the diode and the correspondent lowering of the forward biased barrier. The characteristics of the p-i-p diode were studied with regard to temperature sensor applications. The temperature coefficient of resistance (TCR=-0.05 K{sup -1}) for temperatures above 600 K is about four times larger than the maximal attainable TCR for conventional boron-doped diamond resistors. (orig.)

Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sankaran, Kamatchi J.; Haenen, Ken [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Ryl, Jacek; Darowicki, Kazimierz [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, Robert [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Lin, I-Nan [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

2016-06-13

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

Excitation kinetics of impurity doped quantum dot driven by Gaussian white noise: Interplay with external field

International Nuclear Information System (INIS)

Pal, Suvajit; Sinha, Sudarson Sekhar; Ganguly, Jayanta; Ghosh, Manas

2013-01-01

Highlights: • The excitation kinetics of impurity doped quantum dot has been investigated. • The dot is subject to Gaussian white noise. • External oscillatory field is also applied. • Noise strength and field intensity fabricate the kinetics. • Role of dopant location has also been analyzed. - Abstract: We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by simultaneous application of Gaussian white noise and external sinusoidal field. We have considered both additive and multiplicative noise (in Stratonovich sense). The combined influences of noise strength (ζ) and the field intensity (∊) have been capsuled by invoking their ratio (η). The said ratio and the dopant location have been found to fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be widely different. The investigation reveals emergence of maximization/minimization and saturation in the excitation kinetics as a result of complex interplay between η and the dopant coordinate (r 0 ). The present investigation is believed to provide some useful insights in the functioning of mesoscopic devices where noise plays some significant role

Occurrence of pharmaceuticals, illicit drugs, and resistant types of bacteria in hospital effluent and their effective degradation by boron-doped diamond electrodes

Czech Academy of Sciences Publication Activity Database

Mackuľak, T.; Vojs, M.; Grabic, R.; Golovko, O.; Staňová, A.; Birošová, L.; Medveďová, A.; Híveš, J.; Gál, M.; Kromka, Alexander; Hanusová, A.

2016-01-01

Roč. 147, č. 1 (2016), s. 93-103 ISSN 0026-9247. [35th International Conference on Modern Electrochemical Methods (MEM). Jetřichovice, 18.05.2015-22.05.2015] Institutional support: RVO:68378271 Keywords : hospital wastewater * antibiotics * ecology * boron-doped diamond electrode * mass spectroscopy * pharmaceuticals Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.282, year: 2016

Diamond nanoparticles as a support for Pt and PtRu catalysts for direct methanol fuel cells.

Science.gov (United States)

La-Torre-Riveros, Lyda; Guzman-Blas, Rolando; Méndez-Torres, Adrián E; Prelas, Mark; Tryk, Donald A; Cabrera, Carlos R

2012-02-01

Diamond in nanoparticle form is a promising material that can be used as a robust and chemically stable catalyst support in fuel cells. It has been studied and characterized physically and electrochemically, in its thin film and powder forms, as reported in the literature. In the present work, the electrochemical properties of undoped and boron-doped diamond nanoparticle electrodes, fabricated using the ink-paste method, were investigated. Methanol oxidation experiments were carried out in both half-cell and full fuel cell modes. Platinum and ruthenium nanoparticles were chemically deposited on undoped and boron doped diamond nanoparticles through the use of NaBH(4) as reducing agent and sodium dodecyl benzene sulfonate (SDBS) as a surfactant. Before and after the reduction process, samples were characterized by electron microscopy and spectroscopic techniques. The ink-paste method was also used to prepare the membrane electrode assembly with Pt and Pt-Ru modified undoped and boron-doped diamond nanoparticle catalytic systems, to perform the electrochemical experiments in a direct methanol fuel cell system. The results obtained demonstrate that diamond supported catalyst nanomaterials are promising for methanol fuel cells.

Formation of hydroxyl radicals and kinetic study of 2-chlorophenol photocatalytic oxidation using C-doped TiO2, N-doped TiO2, and C,N Co-doped TiO2 under visible light.

Science.gov (United States)

Ananpattarachai, Jirapat; Seraphin, Supapan; Kajitvichyanukul, Puangrat

2016-02-01

This work reports on synthesis, characterization, adsorption ability, formation rate of hydroxyl radicals (OH(•)), photocatalytic oxidation kinetics, and mineralization ability of C-doped titanium dioxide (TiO2), N-doped TiO2, and C,N co-doped TiO2 prepared by the sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy were used to analyze the titania. The rate of formation of OH(•) for each type of titania was determined, and the OH-index was calculated. The kinetics of as-synthesized TiO2 catalysts in photocatalytic oxidation of 2-chlorophenol (2-CP) under visible light irradiation were evaluated. Results revealed that nitrogen was incorporated into the lattice of titania with the structure of O-Ti-N linkages in N-doped TiO2 and C,N co-doped TiO2. Carbon was joined to the Ti-O-C bond in the C-doped TiO2 and C,N co-doped TiO2. The 2-CP adsorption ability of C,N co-doped TiO2 and C-doped TiO2 originated from a layer composed of a complex carbonaceous mixture at the surface of TiO2. C,N co-doped TiO2 had highest formation rate of OH(•) and photocatalytic activity due to a synergistic effect of carbon and nitrogen co-doping. The order of photocatalytic activity per unit surface area was the same as that of the formation rate of OH(•) unit surface area in the following order: C,N co-doped TiO2 > C-doped TiO2 > N-doped TiO2 > undoped TiO2.

Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

Science.gov (United States)

Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

2016-05-03

Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

Fabrication of Diamond Based Sensors for Use in Extreme Environments

Directory of Open Access Journals (Sweden)

Gopi K. Samudrala

2015-04-01

Full Text Available Electrical and magnetic sensors can be lithographically fabricated on top of diamond substrates and encapsulated in a protective layer of chemical vapor deposited single crystalline diamond. This process when carried out on single crystal diamond anvils employed in high pressure research is termed as designer diamond anvil fabrication. These designer diamond anvils allow researchers to study electrical and magnetic properties of materials under extreme conditions without any possibility of damaging the sensing elements. We describe a novel method for the fabrication of designer diamond anvils with the use of maskless lithography and chemical vapor deposition in this paper. This method can be utilized to produce diamond based sensors which can function in extreme environments of high pressures, high and low temperatures, corrosive and high radiation conditions. We demonstrate applicability of these diamonds under extreme environments by performing electrical resistance measurements during superconducting transition in rare earth doped iron-based compounds under high pressures to 12 GPa and low temperatures to 10 K.

Plasmon resonance enhanced temperature-dependent photoluminescence of Si-V centers in diamond

Energy Technology Data Exchange (ETDEWEB)

Cheng, Shaoheng [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Song, Jie; Wang, Qiliang; Liu, Junsong; Li, Hongdong, E-mail: hdli@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Zhang, Baolin [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2015-11-23

Temperature dependent optical property of diamond has been considered as a very important factor for realizing high performance diamond-based optoelectronic devices. The photoluminescence feature of the zero phonon line of silicon-vacancy (Si-V) centers in Si-doped chemical vapor deposited single crystal diamond (SCD) with localized surface plasmon resonance (LSPR) induced by gold nanoparticles has been studied at temperatures ranging from liquid nitrogen temperature to 473 K, as compared with that of the SCD counterpart in absence of the LSPR. It is found that with LSPR the emission intensities of Si-V centers are significantly enhanced by factors of tens and the magnitudes of the redshift (width) of the emissions become smaller (narrower), in comparison with those of normal emissions without plasmon resonance. More interestingly, these strong Si-V emissions appear remarkably at temperatures up to 473 K, while the spectral feature was not reported in previous studies on the intrinsic Si-doped diamonds when temperatures are higher than room temperature. These findings would lead to reaching high performance diamond-based devices, such as single photon emitter, quantum cryptography, biomarker, and so forth, working under high temperature conditions.

Pairing-induced kinetic energy lowering in doped antiferromagnets

International Nuclear Information System (INIS)

Wrobel, P; Eder, R; Fulde, P

2003-01-01

We analyse lowering of the kinetic energy in doped antiferromagnets at the transition to the superconducting state. Measurements of optical conductivity indicate that such unconventional behaviour takes place in underdoped Bi-2212. We argue that the definition of the operator representing the kinetic energy is determined by experimental conditions. The thermodynamic average of that operator is related to the integrated spectral weight of the optical conductivity and thus depends on the cut-off frequency limiting that integral. If the upper limit of the integral lies below the charge transfer gap the spectral weight represents the average of the hopping term in the space restricted to the energy range below the gap. We show that the kinetic energy is indeed lowered at the superconducting transition in the t-J model (tJM), which is an effective model defined in the restricted space. That result is in agreement with experimental observations and may be attributed to the formation of spin polarons and the change of roles which are played by the kinetic and the potential energy in the tJM and in some effective model for spin polarons. The total spectral weight represents the kinetic energy in a model defined in a broader space if the upper limit in the integral of the optical conductivity is set above the gap. We demonstrate that the kinetic energy in the Hubbard model is also lowered in the superconducting state. That result does not agree with experimental observations, indicating that the spectral weight is conserved for all temperatures if the upper limit of the integral is set above the charge transfer gap. This discrepancy suggests that a single band model is not capable of describing in some respects the physics of excitations across the gap

Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy

Science.gov (United States)

Nakamura, Jin; Kabasawa, Eiki; Yamada, Nobuyoshi; Einaga, Yasuaki; Saito, Daisuke; Isshiki, Hideo; Yugo, Shigemi; Perera, Rupert C. C.

2004-12-01

X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic ( ˜0.1at.% B, B-diamond) and semiconducting ( ˜0.03at.% B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of 185.3eV , and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond: EV=283.9eV . C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (Ea=0.37eV) estimated from the temperature dependence of the conductivity; namely, the change in C2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is ascribed mainly to the electronic structure of C2p near the Fermi level. The observed XES spectra are compared with the discrete variational Xα ( DVXα ) cluster calculation. The DVXα result supports the strong hybridization between B2p and C2p observed in XAS and XES spectra, and suggests that the small amount of boron (⩽0.1at.%) in diamond occupies the substitutional site rather than interstitial site.

Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

NARCIS (Netherlands)

Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

2013-01-01

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

Growth, characterization, and device development in monocrystalline diamond films

Science.gov (United States)

Davis, Robert F.

1991-12-01

The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

Degradation of creatinine using boron-doped diamond electrode: Statistical modeling and degradation mechanism.

Science.gov (United States)

Zhang, Zhefeng; Xian, Jiahui; Zhang, Chunyong; Fu, Degang

2017-09-01

This study investigated the degradation performance and mechanism of creatinine (a urine metabolite) with boron-doped diamond (BDD) anodes. Experiments were performed using a synthetic creatinine solution containing two supporting electrolytes (NaCl and Na 2 SO 4 ). A three-level central composite design was adopted to optimize the degradation process, a mathematical model was thus constructed and used to explore the optimum operating conditions. A maximum mineralization percentage of 80% following with full creatinine removal had been achieved within 120 min of electrolysis, confirming the strong oxidation capability of BDD anodes. Moreover, the results obtained suggested that supporting electrolyte concentration should be listed as one of the most important parameters in BDD technology. Lastly, based on the results from quantum chemistry calculations and LC/MS analyses, two different reaction pathways which governed the electrocatalytic oxidation of creatinine irrespective of the supporting electrolytes were identified. Copyright © 2017 Elsevier Ltd. All rights reserved.

Comparison of electrocatalytic characterization of boron-doped diamond and SnO2 electrodes

International Nuclear Information System (INIS)

Lv, Jiangwei; Feng, Yujie; Liu, Junfeng; Qu, Youpeng; Cui, Fuyi

2013-01-01

Boron-doped diamond (BDD) and SnO 2 electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) and sol–gel method, respectively. Electrochemical characterization of the two electrodes were investigated by phenol electrochemical degradation, accelerated service life test, cyclic voltammetry (CV) in phenol solution, polarization curves in H 2 SO 4 . The surface morphology and crystal structure of two electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. The results showed a considerable difference between the two electrodes in their electrocatalytic activity, electrochemical stability and surface properties. Phenol was readily mineralized to CO 2 at BDD electrode, favoring electrochemical combustion, but its degradation was much slower at SnO 2 electrode. The service life of BDD electrode was 10 times longer than that of SnO 2 . Higher electrocatalytic activity and electrochemical stability of BDD electrode arise from its high oxygen evolution potential and the physically absorbed hydroxyl radicals (·OH) on electrode surface.

Origin, state of the art and some prospects of the diamond CVD

CERN Document Server

Spitsyn, B V; Alexenko, A E

2000-01-01

A short review on the diamond CVD origin, together with its state of the art and some prospects was given. New hybrid methods of the diamond CVD permit to gain 1.2 to 6 times of growth rate in comparison with ordinary diamond CVD's. Recent results on n-type diamond film synthesis through phosphorus doping in the course of the CVD process are briefly discussed. In comparison with high-pressure diamond synthesis, the CVD processes open new facets of the diamond as ultimate crystal for science and technology evolution. It was stressed that, mainly on the basis of new CVDs of diamond, the properties of natural diamond are not only reproduced, but can be surpassed. As examples, mechanical (fracture resistance), physical (thermal conductivity), and chemical (oxidation stability) properties are mentioned. Some present issues in the field are considered.

Electrochemical destruction of chlorophenoxy herbicides by anodic oxidation and electro-Fenton using a boron-doped diamond electrode

International Nuclear Information System (INIS)

Brillas, Enric; Boye, Birame; Sires, Ignasi; Garrido, Jose Antonio; Rodriguez, Rosa Maria; Arias, Conchita; Cabot, Pere-Lluis; Comninellis, Christos

2004-01-01

The degradation of herbicides 4-chlorophenoxyacetic acid (4-CPA), 4-chloro-2-methylphenoxyacetic acid (MCPA), 2,4-dichlorophenoxyacetic acid (2,4-D) and 2,4,5-trichlorophenoxyacetic acid (2,4,5-T) in aqueous medium of pH 3.0 has been comparatively studied by anodic oxidation and electro-Fenton using a boron-doped diamond (BDD) anode. All solutions are totally mineralized by electro-Fenton, even at low current, being the process more efficient with 1 mM Fe 2+ as catalyst. This is due to the production of large amounts of oxidant hydroxyl radical (OH·) on the BDD surface by water oxidation and from Fenton's reaction between added Fe 2+ and H 2 O 2 electrogenerated at the O 2 -diffusion cathode. The herbicide solutions are also completely depolluted by anodic oxidation. Although a quicker degradation is found at the first stages of electro-Fenton, similar times are required for achieving overall mineralization in both methods. The decay kinetics of all herbicides always follows a pseudo first-order reaction. Reversed-phase chromatography allows detecting 4-chlorophenol, 4-chloro-o-cresol, 2,4-dichlorophenol and 2,4,5-trichlorophenol as primary aromatic intermediates of 4-CPA, MCPA, 2,4-D and 2,4,5-T, respectively. Dechlorination of these products gives Cl - , which is slowly oxidized on BDD. Ion-exclusion chromatography reveals the presence of persistent oxalic acid in electro-Fenton by formation of Fe 3+ -oxalato complexes, which are slowly destroyed by OH· adsorbed on BDD. In anodic oxidation, oxalic acid is mineralized practically at the same rate as generated

Electrochemical degradation of a real textile effluent using boron-doped diamond or β-PbO2 as anode

International Nuclear Information System (INIS)

Aquino, Jose M.; Pereira, Gabriel F.; Rocha-Filho, Romeu C.; Bocchi, Nerilso; Biaggio, Sonia R.

2011-01-01

Highlights: · Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. · Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl - ions. · Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. · PbO 2 anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/β-PbO 2 anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L -1 ) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/β-PbO 2 anode, at any experimental condition. The best conditions are j = 5 mA cm -2 and 55 o C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q ap ) of only about 2 kA h m -3 . Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q ap value of only 7 kA h m -3 , with an energy consumption of about 30 kW h m -3 . This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

P-type diamond stripper foils for tandem ion accelerators

International Nuclear Information System (INIS)

Phelps, A.W.; Koba, R.

1989-01-01

The authors are developing a stripper foil composed of a p-type diamond membrane. This diamond stripper foil should have a significantly longer lifetime than any conventional stripper foil material. To be useful for stripper foils, the boron-doped blue diamond films must be thinner than 0.8 μm and pore-free. Two methods are compared for their ability to achieve a high nucleation areal density on a W substrate. Some W substrates were first coated with think layer of boron (≤20 nm) in order to enhance nucleation. Other W substrates were scratched with submicron diamond particles. A schematic diagram of the stripper foil is shown. Stripper foils were created by etching away the central area of W substrates. The diamond membrane was then supported by an annulus of W. Tungsten was selected as a ring-support material because of its high electrical and thermal conductivity, relatively low thermal expansion, and proven suitability as a substrate for diamond CVD. Warping or fracture of the diamond film after substrate etch-back was investigated

Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

Directory of Open Access Journals (Sweden)

Donna H. Wang

2011-08-01

Full Text Available Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM. The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA, due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

Diamond-based electrodes for organic photovoltaic devices

Czech Academy of Sciences Publication Activity Database

Kovalenko, Alexander; Ashcheulov, Petr; Guerrero, A.; Heinrichová, P.; Fekete, Ladislav; Vala, M.; Weiter, M.; Kratochvílová, Irena; Garcia-Belmonte, G.

2015-01-01

Roč. 134, Mar (2015), s. 73-79 ISSN 0927-0248 R&D Projects: GA TA ČR TA04020156 Institutional support: RVO:68378271 Keywords : organic photovoltaic s * boron doped diamond * chemical vapor deposition Subject RIV: JI - Composite Materials Impact factor: 4.732, year: 2015

Fabrication and characterization of an all-diamond tubular flow microelectrode for electroanalysis.

Science.gov (United States)

Hutton, Laura A; Vidotti, Marcio; Iacobini, James G; Kelly, Chris; Newton, Mark E; Unwin, Patrick R; Macpherson, Julie V

2011-07-15

The development of the first all-diamond hydrodynamic flow device for electroanalytical applications is described. Here alternate layers of intrinsic (insulating), conducting (heavily boron doped), and intrinsic polycrystalline diamond are grown to create a sandwich structure. By laser cutting a hole through the material, it is possible to produce a tubular flow ring electrode of a characteristic length defined by the thickness of the conducting layer (for these studies ∼90 μm). The inside of the tube can be polished to 17 ± 10 nm surface roughness using a diamond impregnanted wire resulting in a coplanar, smooth, all-diamond surface. The steady-state limiting current versus volume flow rate characteristics for the one electron oxidation of FcTMA(+) are in agreement with those expected for laminar flow in a tubular electrode geometry. For dopamine detection, it is shown that the combination of the reduced fouling properties of boron doped diamond, coupled with the flow geometry design where the products of electrolysis are washed away downstream of the electrode, completely eradicates fouling during electrolysis. This paves the way for incorporation of this flow design into online electroanalytical detection systems. Finally, the all diamond tubular flow electrode system described here provides a platform for future developments including the development of ultrathin ring electrodes, multiple apertures for increased current response, and multiple, individually addressable ring electrodes incorporated into the same flow tube.

Solid-state reaction kinetics of neodymium doped magnesium hydrogen phosphate system

Science.gov (United States)

Gupta, Rashmi; Slathia, Goldy; Bamzai, K. K.

2018-05-01

Neodymium doped magnesium hydrogen phosphate (NdMHP) crystals were grown by using gel encapsulation technique. Structural characterization of the grown crystals has been carried out by single crystal X-ray diffraction (XRD) and it revealed that NdMHP crystals crystallize in orthorhombic crystal system with space group Pbca. Kinetics of the decomposition of the grown crystals has been studied by non-isothermal analysis. The estimation of decomposition temperatures and weight loss has been made from the thermogravimetric/differential thermo analytical (TG/DTA) in conjuncture with DSC studies. The various steps involved in the thermal decomposition of the material have been analysed using Horowitz-Metzger, Coats-Redfern and Piloyan-Novikova equations for evaluating various kinetic parameters.

Correlation of CVD Diamond Electron Emission with Film Properties

Science.gov (United States)

Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

1996-03-01

Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

Science.gov (United States)

Khun, N W; Liu, E

2010-07-01

Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films.

Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D.

2008-03-29

To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

Energy Technology Data Exchange (ETDEWEB)

Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

2012-03-19

In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Science.gov (United States)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Degradation of 4,6-dinitro-o-cresol from water by anodic oxidation with a boron-doped diamond electrode

International Nuclear Information System (INIS)

Flox, Cristina; Garrido, Jose Antonio; Rodriguez, Rosa Maria; Centellas, Francesc; Cabot, Pere-Lluis; Arias, Conchita; Brillas, Enric

2005-01-01

Anodic oxidation of 4,6-dinitro-o-cresol (DNOC) has been studied in a cell of 100 ml with a boron-doped diamond anode and a graphite cathode, both of 3-cm 2 area. Solutions containing up to approximately 240 mg l -1 of compound in the pH range 2.0-12.0 have been treated at 100, 300 and 450 mA between 15 and 50 deg C. Total mineralization is always achieved due to the great amount of hydroxyl radical (·OH) produced as oxidant on the anode surface. Total organic carbon is more rapidly removed in acid medium, being the optimum pH 3.0. The degradation rate increases when temperature, current and DNOC concentration increase. However, at 100 mA depollution becomes more effective from 71 mg l -1 of initial pollutant. A pseudo first-order kinetics for DNOC decay is always found by reversed-phase chromatography, with a rate constant practically independent of pH, as expected if the same electroactive species is oxidized in all media. Ion-exclusion chromatography allowed the detection of oxalic acid as the ultimate carboxylic acid. The mineralization process leads to the complete release of NO 3 - ions from the destruction of nitroderivative intermediates. These products are oxidized simultaneously with accumulated oxalic acid up to the end of electrolyses. Comparative treatment of the same solutions with a Pt anode yields a quite poor depollution because of the generation of much lower amounts of reactive ·OH on its surface

Mercury-free sono-electroanalytical detection of lead in human blood by use of bismuth-film-modified boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Kruusma, Jaanus [Institute of Physical Chemistry, University of Tartu, Jakobi 2, 51013, Tartu (Estonia); Banks, Craig E.; Compton, Richard G. [Physical and Theoretical Chemistry Laboratory, Oxford University, South Parks Road, OX1 3QZ, Oxford (United Kingdom)

2004-06-01

We report the electroanalytical determination of lead by anodic stripping voltammetry at in-situ-formed, bismuth-film-modified, boron-doped diamond electrodes. Detection limits in 0.1 mol L{sup -1} nitric acid solution of 9.6x10{sup -8} mol L{sup -1} (0.2 ppb) and 1.1x10{sup -8} mol L{sup -1} (2.3 ppb) were obtained after 60 and 300 s deposition times, respectively. An acoustically assisted deposition procedure was also investigated and found to result in improved limits of detection of 2.6 x 10{sup -8} mol L{sup -1} (5.4 ppb) and 8.5 x 10{sup -10} mol L{sup -1} (0.18 ppb) for 60 and 300 s accumulation times, respectively. Furthermore, the sensitivity obtained under quiescent and insonated conditions increased from 5.5 (quiescent) to 76.7 A mol{sup -1} L (insonated) for 60 s accumulation and from 25.8 (quiescent) to 317.6 A mol{sup -1} L (insonated) for 300 s accumulation. Investigation of the use of ultrasound with diluted blood revealed detection limits of the order of 10{sup -8} mol L{sup -1} were achievable with excellent inter- and intra-reproducibility and sensitivity of 411.9 A mol{sup -1} L. For the first time, electroanalytical detection of lead in diluted blood is shown to be possible by use of insonated in-situ-formed bismuth-film-modified boron-doped diamond electrodes. This method is a rapid, sensitive, and non-toxic means of clinical sensing of lead in whole human blood. (orig.)

Electrochemical oxidation of nitrogen-heterocyclic compounds at boron-doped diamond electrode.

Science.gov (United States)

Xing, Xuan; Zhu, Xiuping; Li, Hongna; Jiang, Yi; Ni, Jinren

2012-01-01

Nitrogen-heterocyclic compounds (NHCs) are toxic and bio-refractory contaminants widely spread in environment. This study investigated electrochemical degradation of NHCs at boron-doped diamond (BDD) anode with particular attention to the effect of different number and position of nitrogen atoms in molecular structure. Five classical NHCs with similar structures including indole (ID), quinoline (QL), isoquinoline (IQL), benzotriazole (BT) and benzimidazole (BM) were selected as the target compounds. Results of bulk electrolysis showed that degradation of all NHCs was fit to a pseudo first-order equation. The five compounds were degraded with the following sequence: ID>QL>IQL>BT>BM in terms of their rates of oxidation. Quantum chemical calculation was combined with experimental results to describe the degradation character of NHCs at BDD anode. A linear relationship between degradation rate and delocalization energy was observed, which demonstrated that electronic charge was redistributed through the conjugation system and accumulated at the active sites under the attack of hydroxyl radicals produced at BDD anode. Moreover, atom charge was calculated by semi empirical PM3 method and active sites of NHCs were identified respectively. Analysis of intermediates by GC-MS showed agreement with calculation results. Copyright © 2011 Elsevier Ltd. All rights reserved.

Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

International Nuclear Information System (INIS)

Liu Ai-Ping; Liu Min; Yu Jian-Can; Qian Guo-Dong; Tang Wei-Hua

2015-01-01

Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. (paper)

Further improvement of mechanical and tribological properties of Cr-doped diamond-like carbon nanocomposite coatings by N codoping

Science.gov (United States)

Zou, Changwei; Xie, Wei; Tang, Xiaoshan

2016-11-01

In this study, the effects of nitrogen codoping on the microstructure and mechanical properties of Cr-doped diamond-like carbon (DLC) nanocomposite coatings were investigated in detail. Compared with undoped DLC coatings, the Cr-DLC and N/Cr-DLC coatings showed higher root-mean-square (RMS) roughness values. However, from the X-ray photoelectron spectroscopy (XPS) and Raman results, the fraction of sp2 carbon bonds of N/Cr-DLC coatings increased with increasing N content, which indicated the graphitization of the coatings. The hardness and elastic modulus of N/Cr-DLC coatings with 1.8 at. % N were about 26.8 and 218 GPa, respectively. The observed hardness increase with N codoping was attributed to the incorporation of N in the C network along with the formation of CrC(N) nanoparticles, as confirmed from the transmission electron microscopy (TEM) results. The internal stress markedly decreased from 0.93 to 0.32 GPa as the N content increased from 0 to 10.3 at. %. Furthermore, N doping significantly improved the high-temperature dry friction behavior of DLC coatings. The friction coefficient of N/Cr-DLC coatings with 8.0 and 10.3 at. % N was kept at about 0.2 during the overall sliding test at 500 °C. These results showed that appropriate N doping could promote the mechanical and tribological properties of Cr-DLC nanocomposite coatings.

Functional foam coatings inside tubing and custom developed diamond ignition targets

International Nuclear Information System (INIS)

Dawedeit, Christoph

2014-01-01

The development of inertial confinement fusion targets requires new efficient ablator materials and characteristic temperature measurements during confinement. Here, an aerogel coating process is developed to coat inside spheres and cylinders. The characteristic emission spectrum of doped aerogel inside diamond targets is used as temperature gauge during confinement. Coatings inside metal cylinders confirmed the generality of the coating procedure. In addition artificial diamond is characterized which represents an interesting ablator material.

Boron-doped diamond electrooxidation of ethyl paraben: The effect of electrolyte on by-products distribution and mechanisms.

Science.gov (United States)

Frontistis, Zacharias; Antonopoulou, Maria; Yazirdagi, Melis; Kilinc, Zeynep; Konstantinou, Ioannis; Katsaounis, Alexandros; Mantzavinos, Dionissios

2017-06-15

Ethyl paraben (EP), a representative emerging pollutant of the parabens family, was subject to electrochemical oxidation over a boron-doped diamond (BDD) anode. Experiments were carried out in a single-compartment cell at 10-70 mA cm -2 current density, 200-600 μg L -1 EP concentration, initial solution pH 3-9 and 0.1 M electrolyte concentration. The degradation rate is favored at increased current densities and in the presence of NaCl as the supporting electrolyte, while the pH effect is inconsiderable. For instance, the first order rate constant for the degradation of 200 μg L -1 EP at 30 mA cm -2 was 0.25, 0.1 and 0.07 min -1 with NaCl, Na 2 SO 4 and HClO 4 , respectively. Degradation in secondary treated wastewater was faster than in pure water presumably due to the action of chloride ions present in the effluent. Liquid chromatography time-of-flight mass spectrometry (LC-TOF-MS) was employed to determine major transformation by-products (TBPs). The route of EP degradation with Na 2 SO 4 involves hydroxylation and demethylation reactions, signifying the role of electrogenerated hydroxyl radicals in the process. Twenty one TBPs were identified with NaCl as the electrolyte, including several chlorinated and non-chlorinated dimers and trimers; these findings suggest that indirect oxidation mediated by chlorine radicals and other chlorine active species also takes place. In this view, the role of the supporting electrolyte is crucial since it can influence both reaction kinetics and pathways. Copyright © 2016 Elsevier Ltd. All rights reserved.

Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

International Nuclear Information System (INIS)

Wang, Xiaoping; Wang, Jinye; Wang, Lijun

2016-01-01

A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

Direct conversion of graphite into diamond through electronic excited states

CERN Document Server

Nakayama, H

2003-01-01

An ab initio total energy calculation has been performed for electronic excited states in diamond and rhombohedral graphite by the full-potential linearized augmented plane wave method within the framework of the local density approximation (LDA). First, calculations for the core-excited state in diamond have been performed to show that the ab initio calculations based on the LDA describe the wavefunctions in the electronic excited states as well as in the ground state quite well. Fairly good coincidence with both experimental data and theoretical prediction has been obtained for the lattice relaxation of the core exciton state. The results of the core exciton state are compared with nitrogen-doped diamond. Next, the structural stability of rhombohedral graphite has been investigated to examine the possibility of the transition into the diamond structure through electronic excited states. While maintaining the rhombohedral symmetry, rhombohedral graphite can be spontaneously transformed to cubic diamond. Tota...

Diamond-Based Supercapacitors: Realization and Properties.

Science.gov (United States)

Gao, Fang; Nebel, Christoph E

2016-10-26

In this Spotlight on Applications, we describe our recent progress on the fabrication of surface-enlarged boron-doped polycrystalline diamond electrodes, and evaluate their performance in supercapacitor applications. We begin with a discussion of the fabrication methods of porous diamond materials. The diamond surface enlargement starts with a top-down plasma etching method. Although the extra surface area provided by surface roughening or nanostructuring provides good outcome for sensing applications, a capacitance value <1 mF cm -2 or a surface-enlargement factor <100 fail to meet the requirement of a practical supercapacitor. Driven by the need for large surface areas, we recently focused on the tempated-growth method. We worked on both supported and free-standing porous diamond materials to enhance the areal capacitance to the "mF cm -2 " range. With our newly developed free-standing diamond paper, areal capacitance can be multiplied by stacking multilayers of the electrode material. Finally, considering the fact that there is no real diamond-based supercapacitor device up to now, we fabricated the first prototype pouch-cell device based on the free-standing diamond paper to evaluate its performance. The results reveal that the diamond paper is suitable for operation in high potential windows (up to 2.5 V) in aqueous electrolyte with a capacitance of 0.688 mF cm -2 per layer of paper (or 0.645 F g -1 ). Impedance spectroscopy revealed that the operation frequency of the device exceeds 30 Hz. Because of the large potential window and the ability to work at high frequency, the specific power of the device reached 1 × 10 5 W kg -1 . In the end, we made estimations on the future target performance of diamond supercapacitors based on the existing information.

Low-temperature phenomena in highly doped grained diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Nesládek, Miloš

2009-01-01

Roč. 9, č. 6 (2009), s. 3689-3694 ISSN 1533-4880 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond films * granular structure * superconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2009

Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

Energy Technology Data Exchange (ETDEWEB)

Zanin, Hudson, E-mail: hudsonzanin@gmail.com [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Peterlevitz, Alfredo Carlos; Ceragioli, Helder Jose [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Rodrigues, Ana Amelia; Belangero, William Dias [Laboratorio de Biomateriais em Ortopedia, Faculdade de Ciencias Medicas, Universidade Estadual de Campinas, Rua Cinco de Junho 350 CEP 13083970, Campinas, Sao Paulo (Brazil); Baranauskas, Vitor [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil)

2012-12-01

Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: Black-Right-Pointing-Pointer Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. Black-Right-Pointing-Pointer CVD diamonds have been prepared with magnetic and semiconductor properties. Black-Right-Pointing-Pointer Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing.

Science.gov (United States)

Hébert, Clément; Warnking, Jan; Depaulis, Antoine; Garçon, Laurie Amandine; Mermoux, Michel; Eon, David; Mailley, Pascal; Omnès, Franck

2015-01-01

Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. Copyright © 2014 Elsevier B.V. All rights reserved.

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

Science.gov (United States)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

International Nuclear Information System (INIS)

Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

2016-01-01

Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

International Nuclear Information System (INIS)

Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

2011-01-01

A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Understanding the chemical vapor deposition of diamond: recent progress

International Nuclear Information System (INIS)

Butler, J E; Mankelevich, Y A; Cheesman, A; Ma, Jie; Ashfold, M N R

2009-01-01

In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor, followed by a discussion of the surface chemical process involved in diamond growth.

The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

International Nuclear Information System (INIS)

McCallum, J.C.

1998-01-01

The kinetics of dopant-enhanced solid phase epitaxy (SPE) have been measured in buried a-Si layers doped with arsenic. SPE rates were measured over the temperature range 480 - 660 deg C for buried a-Si layers containing ten different As concentrations. In the absence of H-retardation effects, the dopant-enhanced SPE rate is observed to depend linearly on the As concentration over the entire range of concentrations, 1-16 x 10 19 cm -3 covered in the study. The Fermi level energy was calculated as a function of doping and find an equation that can provide good fits to the data. The implications of these results for models of the SPE process is discussed

Roughness transitions of diamond(100) induced by hydrogen-plasma treatment

Science.gov (United States)

Koslowski, B.; Strobel, S.; Wenig, M. J.; Ziemann, P.

To investigate the influence of hydrogen-plasma treatment on diamond(100) surfaces, heavily boron (B)-doped HPHT diamond crystals were mechanically and chemo-mechanically polished, and exposed to a microwave-assisted hydrogen plasma on a time scale of several minutes. The resulting surface morphology was analyzed on macroscopic scales by stylus profilometry (PFM) and on microscopic scales by STM and AFM. The polished samples have a roughness of typically 100 pmrms (PFM), with no obvious anisotropic structures at the surface. After exposure of the B-doped diamond(100) to the H-plasma, the roughness increases dramatically, and pronounced anisotropic structures appear, these being closely aligned with the crystallographic axis' and planes. An exposure for 3 minutes to the plasma leads to an increase of the roughness to 2-4 nmrms (STM), and a `brick-wall' pattern appears, formed by weak cusps running along . Very frequently, the cusps are replaced by `negative' pyramids that are bordered by {11X} facets. After an exposure of an additional 5 minutes, the surface roughness of the B-doped samples increases further to 20-40 nmrms (STM), and frequently exhibits a regular pattern with structures at a characteristic length scale of about 100 nm. Those structures are aligned approximately with and they are faceted with faces of approximately {XX1}. These results will be discussed in terms of strain relaxation, similar to the surface roughening observed on SiGe/Si and anisotropic etching.

Assessment of CVD diamond as a thermoluminescence dosemeter material

International Nuclear Information System (INIS)

Borchi, E.; Furetta, C.; Leroy, C.

1996-01-01

Diamond has a low atomic number (Z = 6) and is therefore essentially soft tissue (Z = 7.4) equivalent. As such, diamond is an attractive material for applications in dosimetry in which the radiation absorption in the sensor material should be as close as possible to that of soft tissue. Synthetic diamond prepared by chemical vapour deposition (CVD) offers an attractive option for this application. The aim of the present work is to report results on the thermoluminescence (TL) properties of CVD diamond samples. The annealing procedures, the linearity of the TL response as a function of dose, a short-term fading experiment and some kinetic properties have been investigated and are reported here. (Author)

Quantum transport in boron-doped nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Kindl, Dobroslav; Nesládek, Miloš

2008-01-01

Roč. 14, č. 7-8 (2008), s. 161-172 ISSN 0948-1907 R&D Projects: GA ČR GA202/07/0525; GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond film * ballistic transport * superconductivity * Josephson’s effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

In vivo pH monitoring using boron doped diamond microelectrode and silver needles: Application to stomach disorder diagnosis

Science.gov (United States)

Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

2013-11-01

This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

Science.gov (United States)

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

A simple square-wave voltammetric method for the determination of scopolamine in pharmaceuticals using a boron-doped diamond electrode

Directory of Open Access Journals (Sweden)

Simone Birkheur Santos

2014-01-01

Full Text Available A simple procedure is described for the determination of scopolamine by square-wave voltammetry using a cathodically pretreated boron-doped diamond electrode. Cyclic voltammetry studies indicate that the oxidation of scopolamine is irreversible at a peak potential of 1.59 V (vs. Ag/AgCl (3.0 mol L-1 KCl in a 0.50 mol L-1 sulfuric acid solution. Under optimized conditions, the analytical curve obtained was linear (r = 0.9996 for the scopolamine concentration range of 1.0 to 110 µmol L-1, with a detection limit of 0.84 µmol L-1. The method was successfully applied to the determination of scopolamine in pharmaceutical formulations with minimum sample preparation.

Adsorptive Separation and Sequestration of Krypton, I and C14 on Diamond Nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Tushar [Univ. of Missouri, Columbia, MO (United States); Loyalka, Sudarsha [Univ. of Missouri, Columbia, MO (United States); Prelas, Mark [Univ. of Missouri, Columbia, MO (United States); Viswanath, Dabir [Univ. of Missouri, Columbia, MO (United States)

2015-03-31

The objective of this research proposal was to address the separation and sequestration of Kr and I from each other using nano-sized diamond particles and retaining these in diamond until they decay to the background level or can be used as a byproduct. Following removal of Kr and I, an adsorbent will be used to adsorb and store CO2 from the CO2 rich stream. A Field Enhanced Diffusion with Optical Activation (FEDOA-a large scale process that takes advantage of thermal, electrical, and optical activation to enhance the diffusion of an element into diamond structure) was used to load Kr and I on micron or nano sized particles having a larger relative surface area. The diamond particles can be further increased by doping it with boron followed by irradiation in a neutron flux. Previous studies showed that the hydrogen storage capacity could be increased significantly by using boron-doped irradiated diamond particles. Diamond powders were irradiated for a longer time by placing them in a quartz tube. The surface area was measured using a Quantachrome Autosorb system. No significant increase in the surface area was observed. Total surface area was about 1.7 m2/g. This suggests the existence of very minimal pores. Interestingly it showed hysteresis upon desorption. A reason for this may be strong interaction between the surface and the nitrogen molecules. Adsorption runs at higher temperatures did not show any adsorption of krypton on diamond. Use of a GC with HID detector to determine the adsorption capacity from the breakthrough curves was attempted, but experimental difficulties were encountered.

Surface analytical investigation of diamond coatings and nucleation processes by secondary ion mass spectrometry

International Nuclear Information System (INIS)

Steiner, R.

1993-10-01

Imaging SIMS for the investigation of substrate surfaces: the influence of the substrate surface on diamond nucleation is a major topic in the investigation of the chemical vapour deposition (CVD) of diamond. It is well known that the nucleation density can be enhanced by scratching the substrate surface with abrasive powders. Diamond can nucleate at scratches or at residues of the polishing material. In the present work the surface of refractory metals (Mo, Nb, Ta, W) polished with silicon carbide and diamond powder is studied by imaging (2- or 3-D) secondary ion mass spectrometry (SIMS). In first experiments the distribution of SiC and/or diamond residues after polishing was determined. The reaction of diamond with the substrate during heating to deposition temperatures was investigated. Investigation of WC/Co hardmetal substrates: it is well known that Co contained in the binder phase of the hard metal inhibits a strong adhesion between the diamond film and the substrate, which is need for an application as cutting tool. Several attempts to improve the adhesion have been reported up to now. In this work a pre-treatment procedure leading to the formation of Co compounds (borides and silicides) which are stable under diamond deposition conditions were investigated. Furthermore, the application of intermediate sputter layers consisting of chromium and titanium were studied. Investigation of P-doped diamond coatings: in the quaternary phase diagram C-P-B-N exist some phases with diamond structure and superhard phases (e.g BP, c-BN). Also a hypothetical superhard phase of the composition C 3 N 4 is predicted. A scientific objective is the synthesis of such phases by chemical vapour deposition. An increase of the phosphorus concentration effects a distinct change in the morphology of the deposited coatings. A major advantage of SIMS is that the concentration profiles can be measured through the whole film, due to the sputter removal of the sample, and the interface

On the changing electrochemical behaviour of boron-doped diamond surfaces with time after cathodic pre-treatments

International Nuclear Information System (INIS)

Salazar-Banda, Giancarlo R.; Andrade, Leonardo S.; Nascente, Pedro A.P.; Pizani, Paulo S.; Rocha-Filho, Romeu C.; Avaca, Luis A.

2006-01-01

The electrochemical response of the Fe(CN) 6 4-/3- redox couple on boron-doped diamond (BDD) electrodes immediately after a cathodic pre-treatment and as a function of time exposed to atmospheric conditions is reported here. After this pre-treatment the electrode exhibits a changing electrochemical behaviour, i.e., a loss of the reversibility for the Fe(CN) 6 4-/3- redox couple as a function of time. Raman spectra showed that neither important bulk structural differences nor significant changes in the sp 2 /sp 3 content are introduced into the BDD film by the cathodic pre-treatment indicating that H-terminated sites play an important role in the electrochemical response of the electrodes. Thus, the changing behaviour reflected by a progressive decrease of the electron transfer rate with time must be associated to a loss of superficial hydrogen due to oxidation by oxygen from the air, as confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Moreover, it was also found that this changing electrochemical behaviour is inversely proportional to the doping level, suggesting that the boron content has a stabilizing effect on the H-terminated surface. These results point out the necessity of doing the cathodic pre-treatment just before the electrochemical experiments are carried out in order to ensure reliable and reproducible results

Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

Directory of Open Access Journals (Sweden)

Ciprian Radovan

2008-06-01

Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

Science.gov (United States)

Read, Tania L; Macpherson, Julie V

2016-01-06

Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

Science.gov (United States)

Read, Tania L.; Macpherson, Julie V.

2016-01-01

Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp2 carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail. PMID:26779959

The annealing of radiation damage in type Ia diamond

International Nuclear Information System (INIS)

Collins, Alan T; Kiflawi, Isaac

2009-01-01

The kinetics of the recovery of radiation damage in type Ia diamond has been investigated using isothermal annealing at 600 deg. C. In diamonds having a reasonably homogeneous distribution of nitrogen the decay of the vacancy concentration with time can be approximately described by a single exponential. Previous investigations have identified 'fast' and 'slow' components in the annealing, and we show that the existence of more than one time constant is associated with inhomogeneous nitrogen concentrations. The measurements show further that, in order to obtain the oscillator strengths of nitrogen-vacancy centres, studies must be restricted to diamonds with moderately high nitrogen concentrations.

Anodic voltammetry of zolmitriptan at boron-doped diamond electrode and its analytical applications.

Science.gov (United States)

Uslu, B; Canbaz, D

2010-04-01

The electrooxidative behavior and determination of zolmitriptan at a boron-doped diamond electrode were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. Zolmitriptan undergoes irreversible oxidation at a peak potential of about +0.9 V (vs Ag/AgCl/3 M KCl). DPV and SWV techniques are proposed for the determination of zolmitriptan in phosphate buffer at pH 3.03, which allows quantitation over the two different ranges (8 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) in supporting electrolyte for both methods. A linear response was obtained in phosphate buffer over two different ranges (6 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) for spiked serum samples at pH 3.03 for both techniques. The repeatability and reproducibility of the methods for all media were determined. The standard addition method was used in serum. Precision and accuracy were also checked in all media. No electroactive interferences from the excipients and endegenous substances were found in the pharmaceutical dosage form and the biological sample, respectively.

Fabrication of Nickel/nanodiamond/boron-doped diamond electrode for non-enzymatic glucose biosensor

International Nuclear Information System (INIS)

Dai, Wei; Li, Mingji; Gao, Sumei; Li, Hongji; Li, Cuiping; Xu, Sheng; Wu, Xiaoguo; Yang, Baohe

2016-01-01

Highlights: • Nanodiamonds (NDs) were electrophoretically deposited on the BDD film. • The NDs significantly extended the potential window. • Ni/NDs/BDD electrode was prepared by electrodeposition. • The electrode shows good catalytic activity for glucose oxidation. - Abstract: A stable and sensitive non-enzymatic glucose sensor was prepared by modifying a boron-doped diamond (BDD) electrode with nickel (Ni) nanosheets and nanodiamonds (NDs). The NDs were electrophoretically deposited on the BDD surface, and acted as nucleation sites for the subsequent electrodeposition of Ni. The morphology and composition of the modified BDD electrodes were characterized by field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy, respectively. The Ni nanosheet-ND modified BDD electrode exhibited good current response towards the non-enzymatic oxidation of glucose in alkaline media. The NDs significantly extended the potential window. The response to glucose was linear over the 0.2–1055.4-μM range. The limit of detection was 0.05 μM, at a signal-to-noise ratio of 3. The Ni nanosheet-ND/BDD electrode exhibited good selectivity, reproducibility and stability. Its electrochemical performance, low cost and simple preparation make it a promising non-enzymatic glucose sensor.

Transformation kinetics in plasma-sprayed barium- and strontium-doped aluminosilicate (BSAS)

International Nuclear Information System (INIS)

Harder, B.J.; Faber, K.T.

2010-01-01

The hexacelsian-to-celsian phase transformation in Ba 1-x Sr x Al 2 Si 2 O 8 is of interest for environmental barrier coating applications. Plasma-sprayed microstructures were heat treated above 1100 o C and the kinetics of the hexacelsian-to-celsian transformation were quantified. Activation energies for bulk and crushed materials were determined to be ∼340 and ∼500 kJ mol -1 , respectively. X-ray diffraction and electron backscattered diffraction were used to establish how plasma spraying barium- and strontium-doped aluminosilicate effectively reduces the energy required for its transformation.

Impact of keV-energy argon clusters on diamond and graphite

DEFF Research Database (Denmark)

Popok, Vladimir; Samela, Juha; Nordlund, Kai

2012-01-01

Impact of keV-energy size-selected Arn (n = 16, 27, 41) cluster ions on diamond and graphite is studied both experimentally and by molecular dynamics simulations. For the case of diamond, relatively high cluster kinetic energies (above certain threshold) are required to produce severe radiation...... the graphene planes, significant radiation damage is already introduced by impact of clusters with low kinetic energies (a few tens of eV/atom). However, collisions of the argon clusters cause very elastic response of the graphene planes that leads to efficient closure of the craters which could be formed...

Detonation nanodiamonds for doping Kevlar.

Science.gov (United States)

Comet, Marc; Pichot, Vincent; Siegert, Benny; Britz, Fabienne; Spitzer, Denis

2010-07-01

This paper reports on the first attempt to enclose diamond nanoparticles--produced by detonation--into a Kevlar matrix. A nanocomposite material (40 wt% diamond) was prepared by precipitation from an acidic solution of Kevlar containing dispersed nanodiamonds. In this material, the diamond nanoparticles (Ø = 4 nm) are entirely wrapped in a Kevlar layer about 1 nm thick. In order to understand the interactions between the nanodiamond surface and the polymer, the oxygenated surface functional groups of nanodiamond were identified and titrated by Boehm's method which revealed the exclusive presence of carboxyl groups (0.85 sites per nm2). The hydrogen interactions between these groups and the amide groups of Kevlar destroy the "rod-like" structure and the classical three-dimensional organization of this polymer. The distortion of Kevlar macromolecules allows the wrapping of nanodiamonds and leads to submicrometric assemblies, giving a cauliflower structure reminding a fractal object. Due to this structure, the macroscopic hardness of Kevlar doped by nanodiamonds (1.03 GPa) is smaller than the one of pure Kevlar (2.31 GPa). To our knowledge, this result is the first illustration of the change of the mechanical properties induced by doping the Kevlar with nanoparticles.

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

International Nuclear Information System (INIS)

Schuster, Fabian; Hetzl, Martin; Weiszer, Saskia; Garrido, Jose A.; Stutzmann, Martin; Wolfer, Marco; Nebel, Christoph E.; Kato, Hiromitsu

2015-01-01

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging

Electrochemical oxidation of chlorpheniramine at polytyramine film doped with ruthenium (II) complex: Measurement, kinetic and thermodynamic studies

International Nuclear Information System (INIS)

Khudaish, Emad A.; Al-Hinaai, Mohammed; Al-Harthy, Salim; Laxman, Karthik

2014-01-01

Highlights: • XPS data confirm doping of ruthenium onto the polytyramine moiety. • Doping of Ru decreases the Pty resistivity and increases the electron transfer kinetics. • The resulting sensor is stable for a large range of CPM concentration. • Estimated values of thermodynamic and kinetic parameters were comparable. • Application to commercial dosage forms was excellent and satisfactory. - Abstract: A solid-state sensor based on polytyramine film deposited at glassy carbon electrode doped with tris(2,2′-bipyridyl)Ru(II) complex (Ru/Pty/GCE) was constructed electrochemically. A redox property represented by [Ru(bpy) 3 ] 3+/2+ couple immobilized at the Pty moiety was characterized using typical voltammetric techniques. The XPS data and AFM images confirm the grafting of Ru species on the top of Pty while the electrochemical impedance spectroscopy (EIS) data supports the immobilization of both surface modifiers onto the GCE. The constructed sensor exhibits a substantial reactivity, stability and high sensitivity to chlorpheniramine maleate (CPM) oxidation. The detection limit (S/N = 3) was brought down to 338 nM using differential pulse voltammetry method. Thermodynamic and kinetic parameters were evaluated using hydrodynamic method. The apparent diffusion coefficient and the heterogeneous electron transfer rate constant for the CPM oxidation were 2.67 × 10 −5 cm 2 s −1 and 3.21 × 10 −3 cm s −1 , respectively. Interference studies and real sample analysis were conducted with excellent performance and satisfactory results

Electrochemically deposited Cu{sub 2}O cubic particles on boron doped diamond substrate as efficient photocathode for solar hydrogen generation

Energy Technology Data Exchange (ETDEWEB)

Mavrokefalos, Christos K. [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Hasan, Maksudul, E-mail: maksudul.hasan@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom); Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Rohan, James F. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Compton, Richard G. [Department of Chemistry, Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, England (United Kingdom); Foord, John S., E-mail: john.foord@chem.ox.ac.uk [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, England (United Kingdom)

2017-06-30

Highlights: • Fabrication of low-cost photocathode by electrochemical method is described. • Boron-doped diamond is presented as catalyst support. • NiO nanoparticles on Cu{sub 2}O surface enhances photocurrent and electrode stability. • Synergy of metallic interaction between Cu and Ni leads to high efficiency. - Abstract: Herein, we report a novel photocathode for the water splitting reaction. The electrochemical deposition of Cu{sub 2}O particles on boron doped diamond (BDD) electrodes and the subsequent decoration with NiO nanoparticles by a dip coating method to act as co-catalyst for hydrogen evolution reaction is described. The morphology analysis by scanning electron microscope (SEM) revealed that Cu{sub 2}O particles are cubic and decorated sporadically with NiO nanoparticles. X-ray photoelectron spectroscopy (XPS) confirmed the electronic interaction at the interface between Cu{sub 2}O and NiO through a binding energy shift of the main Cu 2p peak. The photoelectrochemical (PEC) performance of NiO-Cu{sub 2}O/BDD showed a much higher current density (−0.33 mA/cm{sup 2}) and photoconversion efficiency (0.28%) compared to the unmodified Cu{sub 2}O/BDD electrode, which are only −0.12 mA/cm{sup 2} and 0.06%, respectively. The enhancement in PEC performance is attributable to the synergy of NiO as an electron conduction mediator leading to the enhanced charge separation and transfer to the reaction interface for hydrogen evolution as evidenced by electrochemical impedance spectroscopy (EIS) and charge carrier density calculation. Stability tests showed that the NiO nanoparticles loading content on Cu{sub 2}O surface is a crucial parameter in this regard.

Electron Paramagnetic Resonance and X-ray Diffraction of Boron- and Phosphorus-Doped Nanodiamonds

Science.gov (United States)

Binh, Nguyen Thi Thanh; Dolmatov, V. Yu.; Lapchuk, N. M.; Shymanski, V. I.

2017-11-01

Powders of boron- and phosphorus-doped detonation nanodiamonds and sintered pellets of non-doped nanodiamond powders were studied using electron paramagnetic resonance and x-ray diffraction. Doping of detonation nanodiamond crystals with boron and phosphorus was demonstrated to be possible. These methods could be used to diagnose diamond nanocrystals doped during shock-wave synthesis.

Experimental studies of N~+ implantation into CVD diamond thin films

Institute of Scientific and Technical Information of China (English)

辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

1997-01-01

The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

Highly charged ion impact induced nanodefects in diamond

Energy Technology Data Exchange (ETDEWEB)

Makgato, T.N., E-mail: thuto.makgato@wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Microscopy and Microanalysis Unit, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Centre of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Schenkel, T. [E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Ritter, R.; Kowarik, G.; Aumayr, F. [Institute of Applied Physics, TU Wien-Vienna University of Technology, 1040 Vienna (Austria); Crespo Lopez-Urrutia, J.; Bernitt, S.; Beilmann, C.; Ginzel, R. [Max-Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany)

2013-11-01

We investigate the interaction of slow highly charged ion (SHCI) beams with insulating type Ib diamond (1 1 1) surfaces. Bismuth and Xenon SHCI beams produced using an Electron Beam Ion Trap (EBIT) and an Electron Cyclotron Resonance source (ECR) respectively, are accelerated onto type Ib diamond (1 1 1) surfaces with impact velocities up to ≈0.4 υ{sub Bohr}. SHCIs with charge states corresponding to potential energies between 4.5 keV and 110 keV are produced for this purpose. Atomic Force Microscopy analysis (AFM) of the diamond surfaces following SHCI impact reveals surface morphological modifications characterized as nanoscale craters (nano-craters). To interpret the results from Tapping Mode AFM analysis of the irradiated diamond surfaces we discuss the interplay between kinetic and potential energy in nano-crater formation using empirical data together with Stopping and Range of Ions in Matter (SRIM) Monte Carlo Simulations.

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

International Nuclear Information System (INIS)

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

2013-01-01

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

2013-09-15

A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

Contract W911NF-12-C-0102 (Advanced Diamond Technologies, Inc.)

Science.gov (United States)

2013-06-24

established. Accomplished mostly systematic fibrinogen test on different diamond surfaces. It showed ADT’s UNCD more resistive to fibrinogen than MCD ...doped UNCD both more resistive to thrombosis than MCD . In this phase I project, we studied the biocompatibility of the diamond ribbon surface by...as-dep, H2 Yes Yes G UNCD as-dep No Yes H UNCD as-dep, H2 No Yes I UNCD SiO2 control J UNCD SiO2, H2 control K MCD as-dep L MCD as-dep, H2

Comparison of glassy carbon and boron doped diamond electrodes: Resistance to biofouling

Energy Technology Data Exchange (ETDEWEB)

Trouillon, Raphael, E-mail: raphael.trouillon06@imperial.ac.u [Department of Bioengineering, Imperial College London, Royal School of Mines Building, London SW7 2AZ (United Kingdom); O' Hare, Danny [Department of Bioengineering, Imperial College London, Royal School of Mines Building, London SW7 2AZ (United Kingdom)

2010-09-01

Carbon based electrodes are widely used for in vivo and in vitro electrochemical studies. In particular, monoamine neurochemistry has been investigated using carbon microfibre electrodes. Similarly, glassy carbon (GC) is the preferred material for many biochemical applications, such as electrochemical detection in chromatography. More recently, boron doped diamond (BDD) has been utilized for biosensing, as its carbon sp{sup 3} structure is expected to provide better resistance to analyte fouling. However, the main factor limiting the use of electrochemical sensors for biological studies is the effect of the biological matrix. Indeed, in vivo or in situ measurements expose the sensor to a complex matrix of proteins, which adsorb on the sensing surface and interfere with the electrochemical measurements. Here, we compare the performance of three carbon based electrodes: GC, GC with low surface oxides and BDD. The redox species ruthenium(III) hexaammine (outer-sphere), ferrocyanide (surface sensitive) and the biologically significant dopamine have been investigated in protein and blood-mimicking matrices. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to examine the effect of spectator molecules and reaction products on electrode mechanisms. Our results show that BDD generally exhibits the best performance for most conditions and reactions and should therefore be preferred for measurements in biologically fouling environments. Furthermore, surface oxides seem also to improve resistance of the GC electrode to biofouling.

Comparison of glassy carbon and boron doped diamond electrodes: Resistance to biofouling

International Nuclear Information System (INIS)

Trouillon, Raphael; O'Hare, Danny

2010-01-01

Carbon based electrodes are widely used for in vivo and in vitro electrochemical studies. In particular, monoamine neurochemistry has been investigated using carbon microfibre electrodes. Similarly, glassy carbon (GC) is the preferred material for many biochemical applications, such as electrochemical detection in chromatography. More recently, boron doped diamond (BDD) has been utilized for biosensing, as its carbon sp 3 structure is expected to provide better resistance to analyte fouling. However, the main factor limiting the use of electrochemical sensors for biological studies is the effect of the biological matrix. Indeed, in vivo or in situ measurements expose the sensor to a complex matrix of proteins, which adsorb on the sensing surface and interfere with the electrochemical measurements. Here, we compare the performance of three carbon based electrodes: GC, GC with low surface oxides and BDD. The redox species ruthenium(III) hexaammine (outer-sphere), ferrocyanide (surface sensitive) and the biologically significant dopamine have been investigated in protein and blood-mimicking matrices. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to examine the effect of spectator molecules and reaction products on electrode mechanisms. Our results show that BDD generally exhibits the best performance for most conditions and reactions and should therefore be preferred for measurements in biologically fouling environments. Furthermore, surface oxides seem also to improve resistance of the GC electrode to biofouling.

Optical patterning of trapped charge in nitrogen-doped diamond

Science.gov (United States)

Jayakumar, Harishankar; Henshaw, Jacob; Dhomkar, Siddharth; Pagliero, Daniela; Laraoui, Abdelghani; Manson, Neil B.; Albu, Remus; Doherty, Marcus W.; Meriles, Carlos A.

2016-08-01

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here, we use two-colour optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen on localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories.

Parabens abatement from surface waters by electrochemical advanced oxidation with boron doped diamond anodes.

Science.gov (United States)

Domínguez, Joaquín R; Muñoz-Peña, Maria J; González, Teresa; Palo, Patricia; Cuerda-Correa, Eduardo M

2016-10-01

The removal efficiency of four commonly-used parabens by electrochemical advanced oxidation with boron-doped diamond anodes in two different aqueous matrices, namely ultrapure water and surface water from the Guadiana River, has been analyzed. Response surface methodology and a factorial, composite, central, orthogonal, and rotatable (FCCOR) statistical design of experiments have been used to optimize the process. The experimental results clearly show that the initial concentration of pollutants is the factor that influences the removal efficiency in a more remarkable manner in both aqueous matrices. As a rule, as the initial concentration of parabens increases, the removal efficiency decreases. The current density also affects the removal efficiency in a statistically significant manner in both aqueous matrices. In the water river aqueous matrix, a noticeable synergistic effect on the removal efficiency has been observed, probably due to the presence of chloride ions that increase the conductivity of the solution and contribute to the generation of strong secondary oxidant species such as chlorine or HClO/ClO - . The use of a statistical design of experiments made it possible to determine the optimal conditions necessary to achieve total removal of the four parabens in ultrapure and river water aqueous matrices.

Modifying thin film diamond for electronic applications

International Nuclear Information System (INIS)

Baral, B.

1999-01-01

The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

Detection of trace levels of Pb2+ in tap water at boron-doped diamond electrodes with anodic stripping voltammetry

International Nuclear Information System (INIS)

Dragoe, Diana; Spataru, Nicolae; Kawasaki, Ryuji; Manivannan, Ayyakkannu; Spataru, Tanta; Tryk, Donald A.; Fujishima, Akira

2006-01-01

Boron-doped diamond (BDD) electrodes were used to investigate the possibility of detecting trace levels of lead by linear-sweep anodic stripping voltammetry. The low limit of detection (2 nM) is an advantage compared to other electrode materials, and it was found that at low pH values, copper concentrations that are usually present in drinking water do not affect to a large extent the detection of lead. These findings recommend anodic stripping voltammetry at the BDD electrodes as a suitable mercury-free method for the determination of trace levels of lead in drinking water. The results obtained for the lead detection in tap water real samples are in excellent agreement with those found by inductively coupled plasma-mass spectrometry (ICP-MS), demonstrating the practical analytical utility of the method

Etude cinétique de la dégradation électrochimique de composés organiques sur l'anode de diamant dope au bore : Application à la dépollution d'effluents aqueux.

OpenAIRE

Weiss-Hortala , Elsa

2006-01-01

The aim of this work was to study the mineralization by electrochemical oxidation of organic compounds contained in aqueous effluents. Compounds chosen as models were phenol and carboxylic acids stemming from the oxidation (maleic, oxalic and formic acids). The performance of the boron doped diamond anode (BDD) was compared with that of a commercial PbO2 electrode, under the same hydrodynamic conditions. The oxidation of phenol in aqueous solution shows that BDD anode possesses better kinetic...

Boron-Doped Diamond (BDD) Coatings Protect Underlying Silicon in Aqueous Acidic Media–Application to the Hydrogen Evolution Reaction

International Nuclear Information System (INIS)

Halima, A.F.; Rana, U.A.; MacFarlane, D.R.

2014-01-01

Abstract: Silicon has potential application as a functional semiconductor electrode in proposed solar water splitting cells. It is abundant and has excellent photovoltaic attributes, however it is extremely susceptible to corrosion, even in the dark, resulting in the formation of an electrochemically passive oxide upon interaction with aqueous media. This work investigates the potential for conductive, inert and transparent boron doped diamond (BDD) coatings to protect p-type Silicon (p-Si). The stability and electrochemical performance of p-Si and p-Si|BDD were investigated using voltammetric techniques in 1 M H 2 SO 4 , before and after long-term exposure to the acidic medium (up to 280 hours) under no applied potential bias. Unprotected Si degraded very rapidly whilst BDD was shown to protect the underlying Si, as evident from I-V curves that indicated no increased resistance across the Si-diamond interface. Furthermore, BDD supported facile proton reduction at significantly lower onset potential for the hydrogen evolution reaction (up to -500 mV vs. SCE) compared with bare Si cathode (-850 mV vs. SCE). The activity of the BDD electrode/electrolyte interface was further improved by coating with platinum catalyst particles, to produce a p-Si|BDD|Pt strucure, which reduced the HER onset to nearly zero overpotential. Tafel analysis indicated that desirable electrochemical activity and stability were achieved for p-Si|BDD|Pt, making this a promising electrode for application in water splitting cells

Kinetic Monte Carlo model of defect transport and irradiation effects in La-doped CeO2

International Nuclear Information System (INIS)

Oaks, Aaron; Yun Di; Ye Bei; Chen Weiying; Stubbins, James F.

2011-01-01

A generalized Kinetic Monte Carlo code was developed to study oxygen mobility in UO 2 type nuclear fuels, using lanthanum doped CeO 2 as a surrogate material. Molecular Statics simulations were performed using interatomic potentials for CeO 2 developed by Gotte, Minervini, and Sayle to calculate local configuration-dependent oxygen vacancy migration energies. Kinetic Monte Carlo simulations of oxygen vacancy diffusion were performed at varying lanthanum dopant concentrations using the developed generalized Kinetic Monte Carlo code and the calculated configuration-dependent migration energies. All three interatomic potentials were found to confirm the lanthanum trapping effect. The results of these simulations were compared with experimental data and the Gotte potential was concluded to yield the most realistic diffusivity curve.

Optical investigations on the wide bandgap semiconductors diamond and aluminum nitride

Energy Technology Data Exchange (ETDEWEB)

Teofilov, Nikolai

2007-07-01

In the context of this thesis, new results about optical defects and intrinsic properties of diamond, AlN and AlGaN alloys have been obtained. The main experimental techniques used were low temperature cathodoluminescence and photoluminescence spectroscopy. First, different aspects of intentional and background doping of diamond were discussed. Thus, the most commonly observed green luminescence emission from boron doped HPHT diamonds has been studied by means of temperature dependent CL in a wide temperature range from 10 K to 450 K. One further subject, addressing deep defect nitrogen related luminescence was a study of nitrogen addition in combustion flame grown CVD diamond layers. Two further topics concern intrinsic excitations in diamond, free excitons and electron-hole drops. Several important parameters like the critical density, the critical temperature, and the low-temperature density inside the drops were evaluated. The ground state density of the electron-hole condensate in diamond is about {approx} 42 times larger than that in Si, and the critical temperature takes very high values in the range of 165K.. 173K. Cathodoluminescence investigations on epitaxial wurtzite AlN layers grown on sapphire, SiC, and Si substrates, have shown that although the material is generally of good optical quality, deep level luminescence are still dominating the spectra. Relatively sharp near-band-edge transitions have been observed in all three samples that exhibit significantly reduced line widths for the AlN/sapphire and the AlN/SiC samples. Much broader emission lines in the near band-gap region have been observed for the first time from the AlN sample grown on Si (111) substrate. Temperature dependent CL measurements and numerical line decompositions reveal complicated substructures in the excitonic lines. The temperature dependence of the energy positions and broadening parameters of the transition have been studied and compared with the other materials. Epitaxial Al

Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiuping [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China); Ni, Jinren, E-mail: nijinren@iee.pku.edu.cn [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China); Wei, Junjun; Xing, Xuan; Li, Hongna [Department of Environmental Engineering, Peking University, the Key Laboratory of Water and Sediment Sciences, Ministry of Education, Beijing100871 (China)

2011-05-15

Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12 h, the COD was decreased from 532 to 99 mg L{sup -1} (<100 mg L{sup -1}, the National Discharge Standard of China). More importantly, the destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters.

Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode.

Science.gov (United States)

Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

2011-05-15

Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12h, the COD was decreased from 532 to 99 mg L(-1) (destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters. Copyright © 2011 Elsevier B.V. All rights reserved.

Destination of organic pollutants during electrochemical oxidation of biologically-pretreated dye wastewater using boron-doped diamond anode

International Nuclear Information System (INIS)

Zhu, Xiuping; Ni, Jinren; Wei, Junjun; Xing, Xuan; Li, Hongna

2011-01-01

Electrochemical oxidation of biologically-pretreated dye wastewater was performed in a boron-doped diamond (BDD) anode system. After electrolysis of 12 h, the COD was decreased from 532 to 99 mg L -1 ( -1 , the National Discharge Standard of China). More importantly, the destination of organic pollutants during electrochemical oxidation process was carefully investigated by molecular weight distribution measurement, resin fractionation, ultraviolet-visible spectroscopy, HPLC and GC-MS analysis, and toxicity test. As results, most organic pollutants were completely removed by electrochemical oxidation and the rest was primarily degraded to simpler compounds (e.g., carboxylic acids and short-chain alkanes) with less toxicity, which demonstrated that electrochemical oxidation of biologically-pretreated dye wastewater with BDD anode was very effective and safe. Especially, the performance of BDD anode system in degradation of large molecular organics such as humic substances makes it very promising in practical applications as an advanced treatment of biologically-pretreated wastewaters.

Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

Science.gov (United States)

Liu, Ai-Ping; Liu, Min; Yu, Jian-Can; Qian, Guo-Dong; Tang, Wei-Hua

2015-05-01

Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272237, 51272231, and 51010002) and the China Postdoctoral Science Foundation (Grant Nos. 2012M520063, 2013T60587, and Bsh1201016).

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

International Nuclear Information System (INIS)

Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

2016-01-01

Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C 2 H 2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C 2 H 2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C 2 H 2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C 2 H 2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus

Electrophoretic preparation and characterization of porous electrodes from diamond nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Riveros, Lyda La Torre; Soto, Keyla; Tryk, Donald A; Cabrera, Carlos R [Department of Chemistry and Center of Nanoscale Materials, University of Puerto Rico, Rio Piedras, PO Box 23346 San Juan, PR 00931-3346 (Puerto Rico)

2007-04-15

We carried out chemical purification of commercially available diamond nanoparticles by refluxing in aqueous HNO{sub 3} and characterized the samples by spectroscopic and surface techniques before and after purification. As a first step in the preparation of electrodes for electrochemistry, we have electrophoretically deposited thin, highly uniform films of controlled thickness (1-8 {mu}m) on silicon substrates using the purified diamond nanoparticles. These have been characterized by scanning electron microscopy (SEM). All films obtained were homogeneous in thickness and without macroscopic holes or cracks. Such structures could also be used in many other applications such as fuel cells or lithium batteries. We have performed cyclic voltammetry experiments with these electrodes. The voltammograms of diamond nanoparticles electrophoretically deposited on silicon indicate hydrogen evolution. This demonstrates that the material is useful as electrocatalitic support. This conclusion is supported by the cyclic voltammograms obtained using ferrycyanide (III) chloride and hexaamineruthenium (III) chloride complexes as redox probes. However, these redox probes showed very small peak currents. This behavior could be improved by doping the diamond nanoparticles with an impurity such as boron.

Electrophoretic preparation and characterization of porous electrodes from diamond nanoparticles

International Nuclear Information System (INIS)

Riveros, Lyda La Torre; Soto, Keyla; Tryk, Donald A; Cabrera, Carlos R

2007-01-01

We carried out chemical purification of commercially available diamond nanoparticles by refluxing in aqueous HNO 3 and characterized the samples by spectroscopic and surface techniques before and after purification. As a first step in the preparation of electrodes for electrochemistry, we have electrophoretically deposited thin, highly uniform films of controlled thickness (1-8 μm) on silicon substrates using the purified diamond nanoparticles. These have been characterized by scanning electron microscopy (SEM). All films obtained were homogeneous in thickness and without macroscopic holes or cracks. Such structures could also be used in many other applications such as fuel cells or lithium batteries. We have performed cyclic voltammetry experiments with these electrodes. The voltammograms of diamond nanoparticles electrophoretically deposited on silicon indicate hydrogen evolution. This demonstrates that the material is useful as electrocatalitic support. This conclusion is supported by the cyclic voltammograms obtained using ferrycyanide (III) chloride and hexaamineruthenium (III) chloride complexes as redox probes. However, these redox probes showed very small peak currents. This behavior could be improved by doping the diamond nanoparticles with an impurity such as boron

Microcrystalline diamond cylindrical resonators with quality-factor up to 0.5 million

Energy Technology Data Exchange (ETDEWEB)

Saito, Daisuke; Yang, Chen; Lin, Liwei [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Heidari, Amir [Department of Mechanical and Aerospace Engineering, University of California, Davis, California 95616 (United States); Najar, Hadi [Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States); Horsley, David A. [Department of Mechanical and Aerospace Engineering, University of California, Davis, California 95616 (United States); Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States)

2016-02-01

We demonstrate high quality-factor 1.5 mm diameter batch-fabricated microcrystalline diamond cylindrical resonators (CR) with quality-factors limited by thermoelastic damping (TED) and surface loss. Resonators were fabricated 2.6 and 5.3 μm thick in-situ boron-doped microcrystalline diamond films deposited using hot filament chemical vapor deposition. The quality-factor (Q) of as-fabricated CR's was found to increase with the resonator diameter and diamond thickness. Annealing the CRs at 700 °C in a nitrogen atmosphere led to a three-fold increase in Q, a result we attribute to thinning of the diamond layer via reaction with residual O{sub 2} in the annealing furnace. Post-anneal Q exceeding 0.5 million (528 000) was measured at the 19 kHz elliptical wineglass modes, producing a ring-down time of 8.9 s. A model for Q versus diamond thickness and resonance frequency is developed including the effects of TED and surface loss. Measured quality factors are shown to agree with the predictions of this model.

Electro-oxidation of the dye azure B: kinetics, mechanism, and by-products.

Science.gov (United States)

Olvera-Vargas, Hugo; Oturan, Nihal; Aravindakumar, C T; Paul, M M Sunil; Sharma, Virender K; Oturan, Mehmet A

2014-01-01

In this work, the electrochemical degradation of the dye azure B in aqueous solutions was studied by electrochemical advanced oxidation processes (EAOPs), electro-Fenton, and anodic oxidation processes, using Pt/carbon-felt and boron-doped diamond (BDD)/carbon-felt cells with H₂O₂ electrogeneration. The higher oxidation power of the electro-Fenton (EF) process using BDD anode was demonstrated. The oxidative degradation of azure B by the electrochemically generated hydroxyl radicals ((•)OH) follows a pseudo-first-order kinetics. The apparent rate constants of the oxidation of azure B by (•)OH were measured according to pseudo-first-order kinetic model. The absolute rate constant of azure B hydroxylation reaction was determined by competition kinetics method and found to be 1.19 × 10(9) M(-1) s(-1). It was found that the electrochemical degradation of the dye leads to the formation of aromatic by-products which are then oxidized to aliphatic carboxylic acids before their almost mineralization to CO₂ and inorganic ions (sulfate, nitrate, and ammonium). The evolution of the TOC removal and time course of short-chain carboxylic acids during treatment were also investigated.

Influence of W content on tribological performance of W-doped diamond-like carbon coatings under dry friction and polyalpha olefin lubrication conditions

International Nuclear Information System (INIS)

Fu, Zhi-qiang; Wang, Cheng-biao; Zhang, Wei; Wang, Wei; Yue, Wen; Yu, Xiang; Peng, Zhi-jian; Lin, Song-sheng; Dai, Ming-jiang

2013-01-01

Highlights: • W-doped DLC coating with various W contents was fabricated. • Friction and wear of DLC coated sample was studied. • The lubricant additive was T307. • The influence of W content on friction under lubrication was unveiled. • The influence of W content on wear under lubrication was studied. - Abstract: The influence on tungsten content on the structure, mechanical properties and tribological performance of W-doped diamond-like carbon (DLC) coatings was studied by X-ray photoelectron spectroscopy, nano-indentation, scratch test, and ball-on-disk friction test. It was found that with increasing W content, the content of WC and free W in the coatings is increased while the content of sp 3 -C in the coatings is decreased. The effect of W content on the hardness and elastic modulus of the coatings is indistinctive, but there exists the highest critical load of scratch test of above 100 N when W content is 3.08 at.%. With the increase of W content, the friction coefficients of W-doped DLC coatings under dry friction conditions are increased while the friction coefficients of W-doped DLC coatings under polyalpha olefin (PAO) lubrication are decreased. With the increase of W content, the wear rates of the DLC-coated samples under dry friction conditions show a minimum value; under pure PAO lubrication, the influence of W content on the wear rates of the DLC-coated samples is indistinctive when the W content is below 10.73 at.% while the wear rates are increased with increasing W content from 10.73 at.% to 24.09 at.%; when lubricated by PAO + thiophosphoric acid amine (T307) salt, the samples coated with the undoped DLC or the W-doped DLC with high W content exhibit low wear rates

Electronic and optical properties of diamond/organic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

2007-07-01

Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

Fluorination of Boron-Doped Diamond Film Electrodes for Minimization of Perchlorate Formation.

Science.gov (United States)

Gayen, Pralay; Chaplin, Brian P

2017-08-23

This research investigated the effects of surface fluorination on both rates of organic compound oxidation (phenol and terephthalic acid (TA)) and ClO 4 - formation at boron-doped diamond (BDD) film anodes at 22 °C. Different fluorination methods (i.e., electrochemical oxidation with perfluorooctanoic acid (PFOA), radio frequency plasma, and silanization) were used to incorporate fluorinated moieties on the BDD surface, which was confirmed by X-ray photoelectron spectroscopy (XPS). The silanization method was found to be the most effective fluorination method using a 1H,1H,2H,2H-perfluorodecyltrichlorosilane precursor to form a self-assembled monolayer (SAM) on the oxygenated BDD surface. The ClO 4 - formation decreased from rates of 0.45 ± 0.03 mmol m -2 min -1 during 1 mM NaClO 3 oxidation and 0.28 ± 0.01 mmol m -2 min -1 during 10 mM NaCl oxidation on the BDD electrode to below detectable levels (layer on the BDD surface that inhibited charge transfer via steric hindrance and hydrophobic effects. The surface coverages and thicknesses of the fluorinated films controlled the charge transfer rates, which was confirmed by estimates of film thicknesses using XPS and density functional theory simulations. The aliphatic silanized electrode also showed very high stability during OH • production. Perchlorate formation rates were below the detection limit (<0.12 μmoles m -2 min -1 ) for up to 10 consecutive NaClO 3 oxidation experiments.

Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

2016-04-01

To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

Directory of Open Access Journals (Sweden)

Alex Croot

2017-11-01

Full Text Available Diamond-based thermionic emission devices could provide a means to produce clean and renewable energy through direct heat-to-electrical energy conversion. Hindering progress of the technology are the thermionic output current and threshold temperature of the emitter cathode. In this report, we study the effects on thermionic emission caused by in situ exposure of the diamond cathode to beta radiation. Nitrogen-doped diamond thin films were grown by microwave plasma chemical vapor deposition on molybdenum substrates. The hydrogen-terminated nanocrystalline diamond was studied using a vacuum diode setup with a 63Ni beta radiation source-embedded anode, which produced a 2.7-fold increase in emission current compared to a 59Ni-embedded control. The emission threshold temperature was also examined to further assess the enhancement of thermionic emission, with 63Ni lowering the threshold temperature by an average of 58 ± 11 °C compared to the 59Ni control. Various mechanisms for the enhancement are discussed, with a satisfactory explanation remaining elusive. Nevertheless, one possibility is discussed involving excitation of preexisting conduction band electrons that may skew their energy distribution toward higher energies.

Synthesis of platinum and platinum–ruthenium-modified diamond nanoparticles

International Nuclear Information System (INIS)

La-Torre-Riveros, Lyda; Abel-Tatis, Emely; Méndez-Torres, Adrián E.; Tryk, Donald A.; Prelas, Mark; Cabrera, Carlos R.

2011-01-01

With the aim of developing dimensionally stable-supported catalysts for direct methanol fuel cell application, Pt and Pt–Ru catalyst nanoparticles were deposited onto undoped and boron-doped diamond nanoparticles (BDDNPs) through a chemical reduction route using sodium borohydride as a reducing agent. As-received commercial diamond nanoparticles (DNPs) were purified by refluxing in aqueous nitric acid solution. Prompt gamma neutron activation analysis and transmission electron microscopy (TEM) techniques were employed to characterize the as-received and purified DNPs. The purified diamond nanoparticulates, as well as the supported Pt and Pt–Ru catalyst systems, were subjected to various physicochemical characterizations, such as scanning electron microscopy, energy dispersive analysis, TEM, X-ray diffraction, inductively coupled plasma-mass spectrometry, X-ray photoelectron spectroscopy, and infrared spectroscopy. Physicochemical characterization showed that the sizes of Pt and Pt–Ru particles were only a few nanometers (2–5 nm), and they were homogeneously dispersed on the diamond surface (5–10 nm). The chemical reduction method offers a simple route to prepare the well-dispersed Pt and Pt–Ru catalyst nanoparticulates on undoped and BDDNPs for their possible employment as an advanced electrode material in direct methanol fuel cells.

Determination of thermoluminescence kinetic parameters of thulium doped lithium calcium borate

International Nuclear Information System (INIS)

Jose, M.T.; Anishia, S.R.; Annalakshmi, O.; Ramasamy, V.

2011-01-01

For the first time kinetic parameters of thulium doped Lithium calcium borate (LCB) Thermoluminescence (TL) material are reported here. Irradiated LCB:Tm 3+ powder has revealed two intense TL glow peaks one at 510 (peak 1) and the other at 660 K (peak 2). Activation energy (E), frequency factor (s) and order of kinetics (b) of these peaks were determined by various heating rate (VHR), initial rise (IR), and peak shape (PS) methods. The trap depth and frequency factor determined for peaks 1 and 2 of LCB:Tm phosphor using VHR and IR methods are in good agreement. The average activation energy of peaks 1 and 2 obtained by these methods is 1.62 and 1.91 eV respectively. The frequency factors of peaks 1 and 2 are in the range of 10 13-16 and 10 12-14 sec -1 respectively. The E and s values estimated using the glow peak shape dependent parameters are relatively less compared to the values obtained from other methods. The large difference in these values is due to the complex nature of the glow curves. The order of the kinetics process for complex glow curve peaks could not be assigned on the basis of shape parameters alone but T m response on absorbed dose is to be considered for final confirmation. Glow peaks 1 and 2 of LCB:Tm 3+ obey first and general order kinetics respectively. - Highlights: → Trap depth and frequency factor are determined for the peaks at 510 and 660 K of LCB:Tm. → Parameters obtained by various heating rate and initial rise methods are in good agreement. → Trap depth of peak 1 and peak 2 is 1.61 eV and 1.91 eV respectively. → T m response to absorbed dose is used to distinguish a first order or non-first order kinetics.

Electronegativity and doping in semiconductors

KAUST Repository

Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

2012-01-01

Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

Electronegativity and doping in semiconductors

KAUST Repository

Schwingenschlögl, Udo

2012-08-23

Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

Superconductivity in heavily boron-doped silicon carbide

Directory of Open Access Journals (Sweden)

Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

2008-01-01

Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

Energy Technology Data Exchange (ETDEWEB)

Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

2015-04-01

Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

Intrinsically High Thermoelectric Performance in AgInSe2 n-Type Diamond-Like Compounds.

Science.gov (United States)

Qiu, Pengfei; Qin, Yuting; Zhang, Qihao; Li, Ruoxi; Yang, Jiong; Song, Qingfeng; Tang, Yunshan; Bai, Shengqiang; Shi, Xun; Chen, Lidong

2018-03-01

Diamond-like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high-performance diamond-like thermoelectric materials are p-type semiconductors. The lack of high-performance n-type diamond-like thermoelectric materials greatly restricts the fabrication of diamond-like material-based modules and their real applications. In this work, it is revealed that n-type AgInSe 2 diamond-like compound has intrinsically high thermoelectric performance with a figure of merit ( zT ) of 1.1 at 900 K, comparable to the best p-type diamond-like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low-frequency Ag-Se "cluster vibrations," as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high-performance n-type AgInSe 2 -based compounds, the diamond-like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond-like thermoelectric materials.

Dye-sensitization of boron-doped diamond foam: champion photoelectrochemical performance of diamond electrodes under solar light illumination

Czech Academy of Sciences Publication Activity Database

Krýsová, Hana; Kavan, Ladislav; Vlčková Živcová, Zuzana; Yeap, W. S.; Verstappen, P.; Maes, W.; Haenen, K.; Gao, F.; Nebel, C. E.

2015-01-01

Roč. 5, č. 99 (2015), s. 81069-81077 ISSN 2046-2069 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 Keywords : dye-sensitized solar cells * electrochemistry * diamonds Subject RIV: CG - Electrochemistry Impact factor: 3.289, year: 2015

γ radiation thermoluminescence performance of HFCVD diamond films

International Nuclear Information System (INIS)

Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Barboza-Flores, M.

2006-01-01

Polycrystalline chemically vapor deposited (CVD) diamond films have been proposed as detectors and dosimeters of ionizing radiation with prospective applications in high-energy photon dosimetry applications. We present a comparison study on the thermoluminescence (TL) properties of two diamond film samples grown by the hot filament CVD method having thickness of 180 and 500 μm and exposed to γ radiation in the 1-300 Gy dose range. The 180 μm thick sample deposited on silicon substrate displayed a TL glow curve peaked at 145 deg. C. The 500 μm, which was a free standing sample, exhibited higher intensity and a well defined first order kinetics TL glow peak around 289 deg. C. Both diamond samples showed a linear dose behavior in the 1-50 Gy range and sublinear behavior for higher doses. The 180 and 500 μm samples presented about 80% and 30% TL losses in a 24 h period, respectively, with both samples showing excellent TL reproducibility. The results indicate that the 500 μm CVD diamond film exhibited a good TL behavior adequate for γ radiation dosimetry

Metastable State Diamond Growth and its Applications to Electronic Devices.

Science.gov (United States)

Jeng, David Guang-Kai

Diamond which consists of a dense array of carbon atoms joined by strong covalent bonds and formed into a tetrahedral crystal structure has remarkable mechanical, thermal, optical and electrical properties suitable for many industrial applications. With a proper type of doping, diamond is also an ideal semiconductor for high performance electronic devices. Unfortunately, natural diamond is rare and limited by its size and cost, it is not surprising that people continuously look for a synthetic replacement. It was believed for long time that graphite, another form of carbon, may be converted into diamond under high pressure and temperature. However, the exact condition of conversion was not clear. In 1939, O. I. Leipunsky developed an equilibrium phase diagram between graphite and diamond based on thermodynamic considerations. In the phase diagram, there is a low temperature (below 1000^ circC) and low pressure (below 1 atm) region in which diamond is metastable and graphite is stable, therefore establishes the conditions for the coexistence of the two species. Leipunsky's pioneer work opened the door for diamond synthesis. In 1955, the General Electric company (GE) was able to produce artificial diamond at 55k atm pressure and a temperature of 2000^ circC. Contrary to GE, B. Derjaguin and B. V. Spitzyn in Soviet Union, developed a method of growing diamonds at 1000^circC and at a much lower pressure in 1956. Since then, researchers, particularly in Soviet Union, are continuously looking for methods to grow diamond and diamond film at lower temperatures and pressures with slow but steady progress. It was only in the early 80's that the importance of growing diamond films had attracted the attentions of researchers in the Western world and in Japan. Recent progress in plasma physics and chemical vapor deposition techniques in integrated electronics technology have pushed the diamond growth in its metastable states into a new era. In this research, a microwave plasma

Degradation of amaranth dye in alkaline medium by ultrasonic cavitation coupled with electrochemical oxidation using a boron-doped diamond anode

International Nuclear Information System (INIS)

Barros, Willyam R.P.; Steter, Juliana R.; Lanza, Marcos R.V.; Motheo, Artur J.

2014-01-01

Amaranth dye is used widely in the processing of paper, textiles, foods, cosmetics, beverages and medicines, and effluents contaminated with this compound are discharged daily into the environment. Recent studies have shown that azo dyes, especially those such as amaranth dye that have been classified as endocrine disruptors, may cause adverse effects to animal and human health. This paper describes the application of electrochemical oxidation (with a boron-doped diamond BDD thin-film anode) coupled with ultrasound sonolysis (20 kHz and 523 W cm −2 ) to the removal of amaranth dye from dilute alkaline solution. The electrochemical and sonoelectrochemical processes (ECh and SECh, respectively) were carried out at constant current density (10 to 50 mA cm −2 ) in a single compartment cylindrical cell. Sonolysis was virtually less useful for the decolorization and degradation of amaranth dye, whilst ECh and SECh were more effective in degrading the dye with almost complete removal (90 - 95%) attained after 90 min of experiment at an applied current density of 50 mA cm −2 . Degradation of the dye followed pseudo first-order kinetics in both processes, but the rate of reaction was faster with the SECh treatment confirming a synergistic effect between the cavitation process and the electrochemical system. Additionally, at low applied current densities (10 and 25 mA cm −2 ), SECh was considerably more effective than ECh for the amaranth dye mineralization. Although at 35 and 50 mA cm −2 , the two processes showed the respective removal of total organic carbon values: (i) 85% for the ECh and 90% for the SECh at 35 mA cm −2 ; (ii) 96% for the ECh and 98% for the SECh at 50 mA cm −2 . It is concluded that SECh presented the most favorable results for the decontamination of wastewaters containing azo dye compounds

Elastic properties of ultrathin diamond/AlN membranes

International Nuclear Information System (INIS)

Zuerbig, V.; Hees, J.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Kirste, L.; Heidrich, N.; Nebel, C.E.; Ambacher, O.; Lebedev, V.

2014-01-01

Nanocrystalline diamond- (NCD) and AlN-based ultrathin single layer and bilayer membranes are investigated towards their mechanical properties. It is shown that chemo-mechanical polishing and heavy boron doping of NCD thin films do not impact the elastic properties of NCD layers as revealed by negligible variations of the NCD Young's modulus (E). In addition, it is demonstrated that the combination of NCD elastic layer and AlN piezo-actuator is highly suitable for the fabrication of mechanically stable ultrathin membranes in comparison to AlN single layer membranes. The elastic parameters of NCD/AlN heterostructures are mainly determined by the outstanding high Young's modulus of NCD (E = 1019 ± 19 GPa). Such ultrathin unimorph membranes allow for fabrication of piezo-actuated AlN/NCD microlenses with tunable focus length. - Highlights: • Mechanical properties of nanocrystalline diamond (NCD) and AlN circular membranes • No influence of polishing of NCD thin films on the mechanical properties of NCD • No influence of heavy boron-doping on the mechanical properties of NCD • Demonstration of mechanically stable piezo-actuated NCD/AlN membranes • Reported performance of AlN/NCD microlenses with adjustable focus length

Voltammetric determination of mixtures of caffeine and chlorogenic acid in beverage samples using a boron-doped diamond electrode.

Science.gov (United States)

Yardım, Yavuz; Keskin, Ertugrul; Şentürk, Zühre

2013-11-15

Herein, a boron-doped diamond (BDD) electrode that is anodically pretreated was used for the simultaneous determination of caffeine (CAF) and chlorogenic acid (CGA) by cyclic and adsorptive stripping voltammetry. The dependence of peak current and potential on pH, scan rate, accumulation parameters and other experimental variables were studied. By using square-wave stripping mode after 60 s accumulation under open-circuit voltage, the BDD electrode was able to separate the oxidation peak potentials of CAF and CGA present in binary mixtures by about 0.4V in Britton-Robinson buffer at pH 1.0. The limits of detection were 0.107 µg mL(-1) (5.51×10(-7) M) for CAF, and 0.448 µg mL(-1) (1.26×10(-6) M) for CGA. The practical applicability of this methodology was tested in commercially available beverage samples. © 2013 Elsevier B.V. All rights reserved.

Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

Energy Technology Data Exchange (ETDEWEB)

Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

2016-10-01

The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

Fullerenes as alternative acceptors by transfer doping of diamond surfaces; Fullerene als alternative Akzeptoren bei der Transferdotierung von Diamantoberflaechen

Energy Technology Data Exchange (ETDEWEB)

Strobel, Paul

2008-06-06

The topic of this thesis is the fullerene induced surface conductivity on hydrogen terminated diamond. A systematic investigation of C{sub 60}, C{sub 60}F{sub 18}, C{sub 60}F{sub 36} and C{sub 60}F{sub 48} as transfer dopants on hydrogenated diamond has been performed. For C{sub 60}, the doping mechanism is more accurately described as a charge exchange in an extreme type II heterojunction. On the other hand a molecular surface acceptor model that takes the degeneracy of holes and the electric field caused by charge separation into account has been performed for the case of C{sub 60}F{sub 48} in excellent agreement with experimental results. Using in situ Hall Effect measurements of air, C{sub 60}, and C{sub 60}F{sub 48} induced conductivity the sign of the charge carriers that dominate the transport properties was determined. At ambient temperature the hole mobility {mu} as a function of the induced charge carrier density p between p=5.10{sup 10} cm{sup -2} and p=3.10{sup 13} cm{sup -2} was measured. A maximum of the mobility of 130-150 cm{sup 2}V{sup -1}s{sup -1} occurs for p=2.10{sup 1} cm{sup -2}. Temperature dependent Hall measurements between 77 and 350 K show a non-activated, constant charge carrier density on all examinated samples, independently of the kind of adsorbates. On the other hand, both the conductivity and the mobility exhibit temperature dependence, varying with the charge carrier concentration. An essential part of this thesis addressed the investigation and the improvement of the thermal stability of the fullerene layers. In order to achieve the covalent attachment of C{sub 60}F{sub 48} to a hydrogen terminated diamond surface a process for controlled partially hydrolisation was developed. Functionalization with hydroxyl groups could be achieved by using a remote water vapour plasma at room temperature for a few seconds as demonstrated by photoelectron spectroscopy. Prolonged water plasma exposure, however, as well as annealing at temperatures

PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

Science.gov (United States)

Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

2009-09-01

diamond's exceptional properties for quantum information processing [2], a topic on which there have been many recent papers, and where a diamond colour centre single photon source is already commercially available. Biomedical applications of diamond are recognised, partly tribological and partly electrochemical, but lie outside the present group of papers. Processing and controlling diamond surfaces and interfaces with other materials in their environment are critical steps en route to exploitation. Boron-doped diamond has already found application in electro-analysis and in the bulk oxidation of dissolved species in solution [3]. Energy-related applications—ranging from high-power electronics [3] to a potential first wall of fusion reactors [4]—are further exciting potential applications. Even small and ugly diamonds have value. Their mechanical properties [5] dominate, with significant niche applications such as thermal sinks. The major applications for diamond to date exploit only a fraction of diamond's special properties: visual for status diamonds, and mechanical for working diamonds. Diamond physics reaches well beyond the usual laboratory, to the geological diamond formation processes in the Earth's mantle. Characterization of natural gem diamonds [6, 7] is one part of the detective story that allows us to understand the conditions under which they formed. It was only half a century ago that the scientific and technological challenges of diamond synthesis were met systematically. Today, most of the recent research on diamond has concentrated on synthetics, whether created using high pressure, high temperature (HPHT) techniques or chemical vapour deposition (CVD). The HPHT synthesis of diamond has advanced dramatically [8, 9] to the extent that dislocation birefringence [10] can be largely eliminated. In silicon technology, the elimination of dislocations was a major step in microelectronics. Now, even diamond can be synthesised containing virtually no

Synergetic action of doping and coating on electrochemical ...

Indian Academy of Sciences (India)

was equipped with a diffracted beam graphite monochroma- tor. The diffraction data were ... (Diamond) high temperature thermal analyzer with 5–20 mg samples and a .... means that Cr, Co, Fe and Ni multi-doping did not change the intrinsic ...

Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond

Directory of Open Access Journals (Sweden)

Franz A. M. Koeck

2017-12-01

Full Text Available Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e., electron emitter or cathode and collector or anode, are optimized for operation in the desired temperature range. These parameters can be defined through the law of Richardson–Dushman that quantifies the ability of a material to release an electron current at a certain temperature as a function of the emission barrier or work function and the emission or Richardson constant. Engineering materials to defined parameter values presents the key challenge in constructing practical thermionic converters. The elevated temperature regime of operation presents a constraint that eliminates most semiconductors and identifies diamond, a wide band-gap semiconductor, as a suitable thermionic material through its unique material properties. For its surface, a configuration can be established, the negative electron affinity, that shifts the vacuum level below the conduction band minimum eliminating the surface barrier for electron emission. In addition, its ability to accept impurities as donor states allows materials engineering to control the work function and the emission constant. Single-crystal diamond electrodes with nitrogen levels at 1.7 eV and phosphorus levels at 0.6 eV were prepared by plasma-enhanced chemical vapor deposition where the work function was controlled from 2.88 to 0.67 eV, one of the lowest thermionic work functions reported. This work function range was achieved through control of the doping concentration where a relation to the amount of band bending emerged. Upward band bending that contributed to the work function was attributed to

Boron-doped diamond electrodes for the electrochemical oxidation and cleavage of peptides.

Science.gov (United States)

Roeser, Julien; Alting, Niels F A; Permentier, Hjalmar P; Bruins, Andries P; Bischoff, Rainer

2013-07-16

Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy carbon (GC) electrodes for the electrochemical oxidation and cleavage of peptides. An optimal working potential of 2000 mV was chosen to ensure oxidation of peptides on BDD by electron transfer processes only. Oxidation by electrogenerated OH radicals took place above 2500 mV on BDD, which is undesirable if cleavage of a peptide is to be achieved. BDD showed improved cleavage yield and reduced adsorption for a set of small peptides, some of which had been previously shown to undergo electrochemical cleavage C-terminal to tyrosine (Tyr) and tryptophan (Trp) on porous carbon electrodes. Repeated oxidation with BDD electrodes resulted in progressively lower conversion yields due to a change in surface termination. Cathodic pretreatment of BDD at a negative potential in an acidic environment successfully regenerated the electrode surface and allowed for repeatable reactions over extended periods of time. BDD electrodes are a promising alternative to GC electrodes in terms of reduced adsorption and fouling and the possibility to regenerate them for consistent high-yield electrochemical cleavage of peptides. The fact that OH-radicals can be produced by anodic oxidation of water at elevated positive potentials is an additional advantage as they allow another set of oxidative reactions in analogy to the Fenton reaction, thus widening the scope of electrochemistry in protein and peptide chemistry and analytics.

Nanocrystalline diamond on Si solar cells for direct photoelectrochemical water splitting

Czech Academy of Sciences Publication Activity Database

Ashcheulov, Petr; Kusko, M.; Fendrych, František; Poruba, A.; Taylor, Andrew; Jäger, Aleš; Fekete, Ladislav; Kraus, I.; Kratochvílová, Irena

2014-01-01

Roč. 211, č. 10 (2014), s. 2347-2352 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 238201 - MATCON Institutional support: RVO:68378271 Keywords : boron-doped diamond * solar cell * heterostructure * water splitting Subject RIV: JI - Composite Materials Impact factor: 1.616, year: 2014

Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

International Nuclear Information System (INIS)

Yamada, Takatoshi; Nebel, Christoph E.; Somu, Kumaragurubaran; Shikata, Shin-ichi

2008-01-01

The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 deg. C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 deg. C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 deg. C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages

Solid-state reaction kinetics and optical studies of cadmium doped magnesium hydrogen phosphate crystals

Science.gov (United States)

Verma, Madhu; Gupta, Rashmi; Singh, Harjinder; Bamzai, K. K.

2018-04-01

The growth of cadmium doped magnesium hydrogen phosphate was successfully carried out by using room temperature solution technique i.e., gel encapsulation technique. Grown crystals were confirmed by single crystal X-ray diffraction (XRD). The structure of the grown crystal belongs to orthorhombic crystal system and crystallizes in centrosymmetric space group. Kinetics of the decomposition of the grown crystals were studied by non-isothermal analysis. Thermo gravimetric / differential thermo analytical (TG/DTA) studies revealed that the grown crystal is stable upto 119 °C. The various steps involved in the thermal decomposition of the material have been analysed using Horowitz-Metzger, Coats-Redfern and Piloyan-Novikova equations for evaluating various kinetic parameters. The optical studies shows that the grown crystals possess wide transmittance in the visible region and significant optical band gap of 5.5ev with cut off wavelength of 260 nm.

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition

International Nuclear Information System (INIS)

Nakazawa, Hideki; Kamata, Ryosuke; Miura, Soushi; Okuno, Saori

2013-01-01

We have investigated the influence of the duty ratio of pulsed substrate bias on the structure and properties of Si-doped diamond-like carbon (Si-DLC) films deposited by radio frequency plasma-enhanced chemical vapor deposition using CH 4 , Ar, and monomethylsilane (CH 3 SiH 3 ) as the Si source. The Si/(Si + C) ratios in the Si-DLC films deposited using pulsed bias were higher than that of the dc-biased Si-DLC film, and the Si fraction increased with decreasing pulse duty ratio. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy analyses revealed that Si-C, Si-H n , and C-H n bonds in the Si-DLC films increased with decreasing duty ratio. The internal stress decreased as the duty ratio decreased, which is probably due to the increase in Si-C, Si-H n , and C-H n bonds in the films. The Si-DLC films deposited using pulsed bias had higher adhesion strength than the dc-biased Si-DLC film because of the further reduction of internal stress. At higher duty ratios, although the Si fractions of the pulse-biased Si-DLC films were higher than that of the dc-biased Si-DLC film, the wear rates of the former were less than that of the latter. - Highlights: • The internal stress of Si-doped films was lowered at lower duty ratios. • The adhesion of pulse-biased films was improved compared with that of dc films. • The tribological properties of Si-doped films were improved by the use of pulse bias

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

Energy Technology Data Exchange (ETDEWEB)

Dai, Wei, E-mail: popdw@126.com [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Jingmao; Geng, Dongsen [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Guo, Peng [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zheng, Jun [Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Qimin, E-mail: qmwang@gdut.edu.cn [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

2016-12-01

Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C{sub 2}H{sub 2} and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C{sub 2}H{sub 2} fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C{sub 2}H{sub 2} fraction. The results show that the Al and Cr contents in the films increased continuously as the C{sub 2}H{sub 2} fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would

Electrochemical oxidation and electroanalytical determination of xylitol at a boron-doped diamond electrode.

Science.gov (United States)

Lourenço, Anabel S; Sanches, Fátima A C; Magalhães, Renata R; Costa, Daniel J E; Ribeiro, Williame F; Bichinho, Kátia M; Salazar-Banda, Giancarlo R; Araújo, Mário C U

2014-02-01

Xylitol is a reduced sugar with anticariogenic properties used by insulin-dependent diabetics, and which has attracted great attention of the pharmaceutical, cosmetics, food and dental industries. The detection of xylitol in different matrices is generally based on separation techniques. Alternatively, in this paper, the application of a boron-doped diamond (BDD) electrode allied to differing voltammetric techniques is presented to study the electrochemical behavior of xylitol, and to develop an analytical methodology for its determination in mouthwash. Xylitol undergoes two oxidation steps in an irreversible diffusion-controlled process (D=5.05 × 10(-5)cm(2)s(-1)). Differential pulse voltammetry studies revealed that the oxidation mechanism for peaks P1 (3.4 ≤ pH ≤ 8.0), and P2 (6.0 ≤ pH ≤ 9.0) involves transfer of 1H(+)/1e(-), and 1e(-) alone, respectively. The oxidation process P1 is mediated by the (•)OH generated at the BDD hydrogen-terminated surface. The maximum peak current was obtained at a pH of 7.0, and the electroanalytical method developed, (employing square wave voltammetry) yielded low detection (1.3 × 10(-6) mol L(-1)), and quantification (4.5 × 10(-6) mol L(-1)) limits, associated with good levels of repeatability (4.7%), and reproducibility (5.3%); thus demonstrating the viability of the methodology for detection of xylitol in biological samples containing low concentrations. © 2013 Elsevier B.V. All rights reserved.

Anodic stripping voltammetry of synthesized CdS nanoparticles at boron-doped diamond electrodes

Energy Technology Data Exchange (ETDEWEB)

Hayat, Mohammad; Ivandini, Tribidasari A., E-mail: ivandini.tri@sci.ui.ac.id; Saepudin, Endang [Department of Chemistry, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Einaga, Yasuaki [Department of Chemistry, Keio University (Japan)

2016-04-19

Cadmium sulphide (CdS) nanoparticles were chemically synthesized using reverse micelles microreactor methods. By using different washing treatments, UV-Vis spectroscopy showed that the absorption peaks appeared at 465 nm, 462 nm, 460 nm, and 459 nm respectively for CdS nanoparticles without and with 1, 2, and 3 times washing treatments using pure water. In comparison with the absorbance peak of bulk CdS at 512 nm, the shifted absorption peaks, indicates that the different sizes of CdS can be prepared. Anodic stripping voltammetry of the CdS nanoparticles was then studied at a boron-doped diamond electrode using 0.1 M KClO{sub 4} and 0.1 M HClO{sub 4} as the electrolytes. A scan rate of 100 mV/s with a deposition potential of -1000 mV (vs. Ag/AgCl) for 60 s at a potential scan from -1600 mV to +800 mV (vs. Ag/AgCl) was applied as the optimum condition of the measurements. Highly-accurate linear calibration curves (R{sup 2} = 0.99) in 0.1 M HClO{sub 4} with the sensitivity of 0.075 mA/mM and the limit of detection of 81 µM in 0.1 M HClO{sub 4} can be achieved, which is promising for an application of CdS nanoparticles as a label for biosensors.

Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

Science.gov (United States)

Yang, Yu; Koeck, Franz A.; Dutta, Maitreya; Wang, Xingye; Chowdhury, Srabanti; Nemanich, Robert J.

2017-10-01

This study investigates how the surface conductivity of H-terminated diamond can be preserved and stabilized by using a dielectric layer with an in situ post-deposition treatment. Thin layers of Al2O3 were grown by plasma enhanced atomic layer deposition (PEALD) on H-terminated undoped diamond (100) surfaces. The changes of the hole accumulation layer were monitored by correlating the binding energy of the diamond C 1s core level with electrical measurements. The initial PEALD of 1 nm Al2O3 resulted in an increase of the C 1s core level binding energy consistent with a reduction of the surface hole accumulation and a reduction of the surface conductivity. A hydrogen plasma step restored the C 1s binding energy to the value of the conductive surface, and the resistance of the diamond surface was found to be within the range for surface transfer doping. Further, the PEALD growth did not appear to degrade the surface conductive layer according to the position of the C 1s core level and electrical measurements. This work provides insight into the approaches to establish and control the two-dimensional hole-accumulation layer of the H-terminated diamond and improve the stability and performance of H-terminated diamond electronic devices.

The Use of Boron-doped Diamond Electrode on Yeast-based Microbial Fuel Cell for Electricity Production

Science.gov (United States)

Hanzhola, G.; Tribidasari, A. I.; Endang, S.

2018-01-01

The dependency of fossil energy in Indonesia caused the crude oil production to be drastically decreased since 2001, while energy consumption increased. In addition, The use of fossil energy can cause several environmental problems. Therefore, we need an alternative environment-friendly energy as solution for these problems. A microbial fuel cell is one of the prospective alternative source of an environment-friendly energy source to be developed. In this study, Boron-doped diamond electrode was used as working electrode and Candida fukuyamaensis as biocatalyst in microbial fuel cell. Different pH of anode compartment (pH 6.5-7.5) and mediator concentration (10-100 μM) was used to produce an optimal electricity. MFC was operated for 3 hours. During operation, the current and voltage density was measured with potensiostat. The maximum power and current density are 425,82 mW/m2 and 440 mA/m2, respectively, for MFC using pH 7.5 at anode compartment without addition of methylene blue. The addition of redox mediator is lowering the produced electricity because of its anti microbial properties that can kill the microbe.

Optimization of actinides trace precipitation on diamond/Si PIN sensor for alpha-spectrometry in aqueous solution

International Nuclear Information System (INIS)

Tran, Q.T.; Pomorski, M.; Sanoit, J. de; Mer-Calfati, C.; Scorsone, E.; Bergonzo, P.

2014-01-01

We report here on a new approach for the detection and identification of actinides (Pu, Am, Cm, etc). This approach is based on the use of a novel device consisting of a boron doped nanocrystalline diamond film deposited onto a silicon PIN diode alpha particle sensor. The actinides concentration is probed in situ in the measuring solution using a method based on electro-precipitation that can be carried out via the use of a doped diamond electrode. The device allows probing directly both alpha-particles activity and energy in liquid solutions. In this work, we address the optimization of the actinides electro-precipitation step onto the sensor. The approach is based on fine tuning the pH of the electrolyte, the nature of the supporting electrolytes (Na_2SO_4 or NaNO_3), the electrochemical cell geometry, the current density value, the precipitation duration as well as the sensor surface area. The deposition efficiency was significantly improved with values reaching for instance up to 81.5% in the case of electro-precipitation of 5.96 Bq "2"4"1Am on the sensor. The diamond/silicon sensor can be reused after measurement by performing a fast decontamination step at high yields 99%, where the "2"4"1Am electro-precipitated layer is quickly removed by applying an anodic current (+2 mA.cm"-"2 for 10 minutes) to the boron doped nanocrystalline diamond electrode in aqueous solution. This study demonstrated that alpha-particle spectroscopic measurements could be made feasible for the first time in aqueous solutions after an electrochemical deposition process, with theoretical detections thresholds as low as 0.24 Bq.L"-"1. We believe that this approach can be of very high interest for alpha-particle spectroscopy in liquids for actinides trace detection. (authors)

Potential barrier heights at metal on oxygen-terminated diamond interfaces

Energy Technology Data Exchange (ETDEWEB)

Muret, P., E-mail: pierre.muret@neel.cnrs.fr; Traoré, A.; Maréchal, A.; Eon, D. [Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble, France and CNRS, Inst. NEEL, F-38042 Grenoble (France); Pernot, J. [Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, (France); CNRS, Inst. NEEL, F-38042 Grenoble, (France); Institut Universitaire de France, 103 Boulevard Saint-Michel, F-75005 Paris (France); Pinero, J. C.; Villar, M. P.; Araujo, D., E-mail: daniel.araujo@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2015-11-28

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO{sub 2} deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that by Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones, (b) annealed at 350 °C, (c) annealed at 450 °C with the characteristic barrier heights of 2.2–2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients that are able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

Ultra-nanocrystalline diamond nanowires with enhanced electrochemical properties

International Nuclear Information System (INIS)

Shalini, Jayakumar; Lin, Yi-Chieh; Chang, Ting-Hsun; Sankaran, Kamatchi Jothiramalingam; Chen, Huang-Chin; Lin, I.-Nan; Lee, Chi-Young; Tai, Nyan-Hwa

2013-01-01

The effects of N 2 incorporation in Ar/CH 4 plasma on the electrochemical properties and microstructure of ultra-nanocrystalline diamond (UNCD) films are reported. While the electrical conductivity of the films increased monotonously with increasing N 2 content (up to 25%) in the plasma, the electrochemical behavior was optimized for UNCD films grown in (Ar–10% N 2 )/CH 4 plasma. Transmission electron microscopy showed that the main factor resulting in high conductivity in the films was the formation of needle-like nanodiamond grains and the induction graphite layer encapsulating these grains. The electrochemical process for N 2 -incorporated UNCD films can readily be activated due to the presence of nanographite along the grain boundaries of the films. The formation of needle-like diamond grains was presumably due to the presence of CN species that adhered to the existing nanodiamond clusters, which suppressed radial growth of the nanodiamond crystals, promoting anisotropic growth and the formation of needle-like nanodiamond. The N 2 -incorporated UNCD films outperformed other electrochemical electrode materials, such as boron-doped diamond and glassy carbon, in that the UNCD electrodes could sense dopamine, urea, and ascorbic acid simultaneously in the same mixture with clear resolution

Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

Energy Technology Data Exchange (ETDEWEB)

Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho, Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

2014-03-15

This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

International Nuclear Information System (INIS)

Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos

2014-01-01

This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L -1 H 2 SO 4 solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L -1 (r 2 = 0.999), with a detection limit of 7.1 μmol L -1 for PC and 3.8 μmol L -1 for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

2011-01-01

Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode

Energy Technology Data Exchange (ETDEWEB)

Qiu, Cuicui [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Yuan, Shi [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Xiang; Wang, Huijiao; Bakheet, Belal [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Komarneni, Sridhar [Department of Ecosystem Science and Management and Material Research Institute, 205 MRL Building, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Yujue, E-mail: wangyujue@tsinghua.edu.cn [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

2014-09-15

Graphical abstract: - Highlights: • Combining electrolysis with ozonation greatly enhances nitrophenol mineralization. • O{sub 3} can rapidly degrade nitrophenol to carboxylic acids in the bulk solution. • Carboxylic acids can be mineralized by ·OH generated from multiple sources in the electrolysis-O{sub 3} process. • Electrolysis and ozonation can compensate for each other's weakness on pollutant degradation. - Abstract: Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O{sub 3}) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O{sub 3} process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O{sub 3}, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO{sub 2} by ·OH generated from multiple sources in the electrolysis-O{sub 3} system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

Friction and wear properties of diamonds and diamond coatings

International Nuclear Information System (INIS)

Hayward, I.P.

1991-01-01

The recent development of chemical vapor deposition techniques for diamond growth enables bearings to be designed which exploit diamond's low friction and extreme resistance to wear. However, currently produced diamond coatings differ from natural diamond surfaces in that they are polycrystalline and faceted, and often contain appreciable amounts of non-diamond material (i.e. graphitic or amorphous carbon). Roughness, in particular, influences the friction and wear properties; rough coatings severely abrade softer materials, and can even wear natural diamond sliders. Nevertheless, the best available coatings exhibit friction coefficients as low as those of natural diamond and are highly resistant to wear. This paper reviews the tribological properties of natural diamond, and compares them with those of chemical vapor deposited diamond coatings. Emphasis is placed on the roles played by roughness and material transfer in controlling frictional behavior. (orig.)

In vitro assessment of cutting efficiency and durability of zirconia removal diamond rotary instruments.

Science.gov (United States)

Kim, Joon-Soo; Bae, Ji-Hyeon; Yun, Mi-Jung; Huh, Jung-Bo

2017-06-01

Recently, zirconia removal diamond rotary instruments have become commercially available for efficient cutting of zirconia. However, research of cutting efficiency and the cutting characteristics of zirconia removal diamond rotary instruments is limited. The purpose of this in vitro study was to assess and compare the cutting efficiency, durability, and diamond rotary instrument wear pattern of zirconia diamond removal rotary instruments with those of conventional diamond rotary instruments. In addition, the surface characteristics of the cut zirconia were assessed. Block specimens of 3 mol% yttrium cation-doped tetragonal zirconia polycrystal were machined 10 times for 1 minute each using a high-speed handpiece with 6 types of diamond rotary instrument from 2 manufacturers at a constant force of 2 N (n=5). An electronic scale was used to measure the lost weight after each cut in order to evaluate the cutting efficiency. Field emission scanning electron microscopy was used to evaluate diamond rotary instrument wear patterns and machined zirconia block surface characteristics. Data were statistically analyzed using the Kruskal-Wallis test, followed by the Mann-Whitney U test (α=.05). Zirconia removal fine grit diamond rotary instruments showed cutting efficiency that was reduced compared with conventional fine grit diamond rotary instruments. Diamond grit fracture was the most dominant diamond rotary instrument wear pattern in all groups. All machined zirconia surfaces were primarily subjected to plastic deformation, which is evidence of ductile cutting. Zirconia blocks machined with zirconia removal fine grit diamond rotary instruments showed the least incidence of surface flaws. Although zirconia removal diamond rotary instruments did not show improved cutting efficiency compared with conventional diamond rotary instruments, the machined zirconia surface showed smoother furrows of plastic deformation and fewer surface flaws. Copyright © 2016 Editorial Council

Diamond surface functionalization with biomimicry - Amine surface tether and thiol moiety for electrochemical sensors

Science.gov (United States)

Sund, James B.; Causey, Corey P.; Wolter, Scott D.; Parker, Charles B.; Stoner, Brian R.; Toone, Eric J.; Glass, Jeffrey T.

2014-05-01

The surface of conducting diamond was functionalized with a terminal thiol group that is capable of binding and detecting nitrogen-oxygen species. The functionalization process employed multiple steps starting with doped diamond films grown by plasma enhanced chemical vapor deposition followed by hydrogen termination and photochemical attachment of a chemically protected amine alkene. The surface tether was deprotected to reveal the amine functionality, which enabled the tether to be extended with surface chemistry to add a terminal thiol moiety for electrochemical sensing applications. Each step of the process was validated using X-ray photoelectron spectroscopy analysis.

Diamond surface functionalization with biomimicry – Amine surface tether and thiol moiety for electrochemical sensors

Energy Technology Data Exchange (ETDEWEB)

Sund, James B., E-mail: jim@jamessund.com [Department of Electrical and Computer Engineering, Duke University, Durham, NC (United States); Causey, Corey P. [Departments of Chemistry and Biochemistry, Duke University, Durham, NC (United States); Wolter, Scott D. [Department of Physics, Elon University, Elon, NC 27244 (United States); Parker, Charles B., E-mail: charles.parker@duke.edu [Department of Electrical and Computer Engineering, Duke University, Durham, NC (United States); Stoner, Brian R. [Department of Electrical and Computer Engineering, Duke University, Durham, NC (United States); Research Triangle Institute (RTI) International, Research Triangle Park, NC (United States); Toone, Eric J. [Departments of Chemistry and Biochemistry, Duke University, Durham, NC (United States); Glass, Jeffrey T. [Department of Electrical and Computer Engineering, Duke University, Durham, NC (United States)

2014-05-01

Highlights: • Diamond surfaces were functionalized with organic molecules using a novel approach. • Used biomimicry to select a molecule to bind NO, similar to the human body. • Molecular orbital theory predicted the molecule-analyte oxidation behavior. • A thiol moiety was attached to an amine surface tether on the diamond surface. • XPS analysis verified each surface functionalization step. - Abstract: The surface of conducting diamond was functionalized with a terminal thiol group that is capable of binding and detecting nitrogen–oxygen species. The functionalization process employed multiple steps starting with doped diamond films grown by plasma enhanced chemical vapor deposition followed by hydrogen termination and photochemical attachment of a chemically protected amine alkene. The surface tether was deprotected to reveal the amine functionality, which enabled the tether to be extended with surface chemistry to add a terminal thiol moiety for electrochemical sensing applications. Each step of the process was validated using X-ray photoelectron spectroscopy analysis.

Diamond surface functionalization with biomimicry – Amine surface tether and thiol moiety for electrochemical sensors

International Nuclear Information System (INIS)

Sund, James B.; Causey, Corey P.; Wolter, Scott D.; Parker, Charles B.; Stoner, Brian R.; Toone, Eric J.; Glass, Jeffrey T.

2014-01-01

Highlights: • Diamond surfaces were functionalized with organic molecules using a novel approach. • Used biomimicry to select a molecule to bind NO, similar to the human body. • Molecular orbital theory predicted the molecule-analyte oxidation behavior. • A thiol moiety was attached to an amine surface tether on the diamond surface. • XPS analysis verified each surface functionalization step. - Abstract: The surface of conducting diamond was functionalized with a terminal thiol group that is capable of binding and detecting nitrogen–oxygen species. The functionalization process employed multiple steps starting with doped diamond films grown by plasma enhanced chemical vapor deposition followed by hydrogen termination and photochemical attachment of a chemically protected amine alkene. The surface tether was deprotected to reveal the amine functionality, which enabled the tether to be extended with surface chemistry to add a terminal thiol moiety for electrochemical sensing applications. Each step of the process was validated using X-ray photoelectron spectroscopy analysis

Diamond Fuzzy Number

Directory of Open Access Journals (Sweden)

T. Pathinathan

2015-01-01

Full Text Available In this paper we define diamond fuzzy number with the help of triangular fuzzy number. We include basic arithmetic operations like addition, subtraction of diamond fuzzy numbers with examples. We define diamond fuzzy matrix with some matrix properties. We have defined Nested diamond fuzzy number and Linked diamond fuzzy number. We have further classified Right Linked Diamond Fuzzy number and Left Linked Diamond Fuzzy number. Finally we have verified the arithmetic operations for the above mentioned types of Diamond Fuzzy Numbers.

Effect of tetramethylsilane flow on the deposition and tribological behaviors of silicon doped diamond-like carbon rubbed against poly(oxymethylene)

Science.gov (United States)

Deng, Xingrui; Lim, Yankuang; Kousaka, Hiroyuki; Tokoroyama, Takayuki; Umehara, Noritsugu

2014-11-01

In this study, silicon doped diamond-like carbon (Si-DLC) was deposited on stainless steel (JIS SUS304) by using surface wave-excited plasma (SWP). The effects of tetramethylsilane (TMS) flow on the composition, topography, mechanical properties and tribological behavior were investigated. Pin-on-disc tribo-meter was used to investigate the tribological behavior of the Si-DLC coating rubbed against poly(oxymethylene) (POM). The results show that the deposition rate, roughness of Si-DLC increased and the hardness of Si-DLC decreased with the increase of TMS flow rate from 2 to 4 sccm; the roughness increase therein led to the increase of ploughing term of friction. The increase of adhesion term was also seen with the increase of TMS flow rate, being attributed to the decrease of hydrogen concentration in the coating. It was considered that more POM transferred onto the Si-DLC deposited at higher TMS flow rate due to larger heat generation by friction.

Diamond Pixel Detectors and 3D Diamond Devices

International Nuclear Information System (INIS)

Venturi, N.

2016-01-01

Results from detectors of poly-crystalline chemical vapour deposited (pCVD) diamond are presented. These include the first analysis of data of the ATLAS Diamond Beam Monitor (DBM). The DBM module consists of pCVD diamond sensors instrumented with pixellated FE-I4 front-end electronics. Six diamond telescopes, each with three modules, are placed symmetrically around the ATLAS interaction point. The DBM tracking capabilities allow it to discriminate between particles coming from the interaction point and background particles passing through the ATLAS detector. Also, analysis of test beam data of pCVD DBM modules are presented. A new low threshold tuning algorithm based on noise occupancy was developed which increases the DBM module signal to noise ratio significantly. Finally first results from prototypes of a novel detector using pCVD diamond and resistive electrodes in the bulk, forming a 3D diamond device, are discussed. 3D devices based on pCVD diamond were successfully tested with test beams at CERN. The measured charge is compared to that of a strip detector mounted on the same pCVD diamond showing that the 3D device collects significantly more charge than the planar device.

Superior hydrogen storage kinetics of MgH2 nanoparticles doped with TiF3

International Nuclear Information System (INIS)

Xie, L.; Liu, Y.; Wang, Y.T.; Zheng, J.; Li, X.G.

2007-01-01

MgH 2 nanoparticles were obtained by hydriding ultrafine magnesium particles which were prepared by hydrogen plasma-metal reaction. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the obtained sample is almost pure MgH 2 phase, without residual magnesium and with an average particle size of ∼300 nm. Milled with 5 wt.% TiF 3 as a doping precursor in a hydrogen atmosphere, the sample desorbed 4.5 wt.% hydrogen in 6 min under an initial hydrogen pressure of ∼0.001 bar at 573 K and absorbed 4.2 wt.% hydrogen in 1 min under ∼20 bar hydrogen at room temperature. Compared with MgH 2 micrometer particles doped with 5 wt.% TiF 3 under the same conditions as the MgH 2 nanoparticles, it is suggested that decrease of particle size is beneficial for enhancing absorption capacity at low temperatures, but has no effect on desorption. In addition, the catalyst was mainly responsible for improving the sorption kinetics and its catalytic mechanism is discussed

The system of quantum structures coated with the diamond-like carbon for silicon solar cells

International Nuclear Information System (INIS)

Efimov, V.P.; Abyzov, A.S.; Luchaninov, A.A.; Omarov, A.O.; Strel'nitskij, V.E.

2010-01-01

The peculiarity of the process of amorphous diamond-like carbon coating deposition on the surface of Si photoelectric cell with quantum filaments, which was irradiated by the electrons and heavy multi-charge ions, have been investigated. The experimental results on the investigations of the optical characteristics of the nitrogen doped hydrogenated diamond-like carbon a-C:(H,N) coatings were presented. The parameters of the process of a-C:(H,N) coating deposition on the surfaces of disordered Si semiconductors structures were optimized for the purpose of minimizing optical reflection coefficient from the front surface of the crystal and supplying its mechanical durability.

Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

Science.gov (United States)

Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

2008-07-30

A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

Photoluminescence decay kinetics of doped ZnS nanophosphors

International Nuclear Information System (INIS)

Sharma, Rajesh; Bhatti, H S

2007-01-01

Doped nanophosphor samples of ZnS:Mn, ZnS:Mn, Co and ZnS:Mn, Fe were prepared using a chemical precipitation method. Photoluminescence (PL) spectra were obtained and lifetime studies of the nanophosphors were carried out at room temperature. To the best of our knowledge, there are very few reports on the photoluminescence investigations of Co-doped or Fe-doped ZnS:Mn nanoparticles in the literature. Furthermore, there is no report on luminescence lifetime shortening of ZnS:Mn nanoparticles doped with Co or Fe impurity. Experimental results showed that there is considerable change in the photoluminescence spectra of ZnS:Mn nanoparticles doped with X (X = Co, Fe). The PL spectra of the ZnS:Mn, Co nanoparticle sample show three peaks at 410, 432 and 594 nm, while in the case of the ZnS:Mn, Fe nanoparticle sample the peaks are considerably different. The lifetimes are found to be in microsecond time domain for 594 nm emission, while nanosecond order lifetimes are obtained for 432 and 411 nm emission in ZnS:Mn, X nanophosphor samples. These lifetimes suggest a new additional decay channel of the carrier in the host material

Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

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G. Baskaran

2006-01-01

Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

Diamond nanowires: a novel platform for electrochemistry and matrix-free mass spectrometry.

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Szunerits, Sabine; Coffinier, Yannick; Boukherroub, Rabah

2015-05-27

Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs), and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs) focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed.

Diamond Nanowires: A Novel Platform for Electrochemistry and Matrix-Free Mass Spectrometry

Directory of Open Access Journals (Sweden)

Sabine Szunerits

2015-05-01

Full Text Available Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs, and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed.

Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

Science.gov (United States)

Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

2018-03-14

Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

Reduced sediment melting at 7.5-12 GPa: phase relations, geochemical signals and diamond nucleation

Science.gov (United States)

Brey, G. P.; Girnis, A. V.; Bulatov, V. K.; Höfer, H. E.; Gerdes, A.; Woodland, A. B.

2015-08-01

Melting of carbonated sediment in the presence of graphite or diamond was experimentally investigated at 7.5-12 GPa and 800-1600 °C in a multianvil apparatus. Two starting materials similar to GLOSS of Plank and Langmuir (Chem Geol 145:325-394, 1998) were prepared from oxides, carbonates, hydroxides and graphite. One mixture (Na-gloss) was identical in major element composition to GLOSS, and the other was poorer in Na and richer in K (K-gloss). Both starting mixtures contained ~6 wt% CO2 and 7 wt% H2O and were doped at a ~100 ppm level with a number of trace elements, including REE, LILE and HFSE. The near-solidus mineral assemblage contained a silica polymorph (coesite or stishovite), garnet, kyanite, clinopyroxene, carbonates (aragonite and magnesite-siderite solid solution), zircon, rutile, bearthite and hydrous phases (phengite and lawsonite at 10 GPa). Hydrous phases disappear at ~900 °C, and carbonates persist up to 1000-1100 °C. At temperatures >1200 °C, the mineral assemblage consists of coesite or stishovite, kyanite and garnet. Clinopyroxene stability depends strongly on the Na content in the starting mixture; it remains in the Na-gloss composition up to 1600 °C at 12 GPa, but was not observed in K-gloss experiments above 1200 °C. The composition of melt or fluid changes gradually with increasing temperature from hydrous carbonate-rich ( 1). Aragonite and Fe-Mg carbonate have very different REE partition coefficients ( D Mst-Sd/L ~ 0.01 and D Arg/L ~ 1). Nb, Ta, Zr and Hf are strongly incompatible in both carbonates. The bearthite/melt partition coefficients are very high for LREE (>10) and decrease to ~1 for HREE. All HFSE are strongly incompatible in bearthite. In contrast, Ta, Nb, Zr and Hf are moderately to strongly compatible in ZrSiO4 and TiO2 phases. Based on the obtained partition coefficients, the composition of a mobile phase derived by sediment melting in deep subduction zones was calculated. This phase is strongly enriched in

Diamond bio electronics.

Science.gov (United States)

Linares, Robert; Doering, Patrick; Linares, Bryant

2009-01-01

The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions.

Application of holographic sub-wavelength diffraction gratings for monitoring of kinetics of bioprocesses

Science.gov (United States)

Tamulevičius, Tomas; Šeperys, Rimas; Andrulevičius, Mindaugas; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas; Mikalayeva, Valeryia; Daugelavičius, Rimantas

2012-09-01

In this work we present a refractive index (RI) sensor based on a sub-wavelength holographic diffraction grating. The sensor chip was fabricated by dry etching of the finely spaced (d = 428 nm) diffraction grating in SiOx doped diamond like carbon (DLC) film. It is shown that employing a fabricated sensor chip, and using the proposed method of analysis of data, one can inspect kinetics of processes in liquids occurring in the vicinity of the grating surface. The method is based on the spectral composition analysis of polarized polychromatic light reflected from the sub-wavelength diffraction grating. The RI measurement system was tested with different model liquid analytes including 25 wt.%, 50 wt.% sugar water solutions, 10 °C, 50 °C distilled water, also Gram-positive bacteria Bacillus subtilis interaction with ion-permeable channels forming antibiotic gramicidin D and a murolytic enzyme lysozyme. Analysis of the data set of specular reflection spectra enabled us to follow the kinetics of the RI changes in the analyte with millisecond resolution. Detectable changes in the effective RI were not worse than Δn = 10-4.

Electrochemical oxidation of COD from real textile wastewaters: Kinetic study and energy consumption.

Science.gov (United States)

Zou, Jiaxiu; Peng, Xiaolan; Li, Miao; Xiong, Ying; Wang, Bing; Dong, Faqin; Wang, Bin

2017-03-01

In the present study, the electrochemical oxidation of real wastewaters discharged by textile industry was carried out using a boron-doped diamond (BDD) anode. The effect of operational variables, such as applied current density (20-100 mA·cm -2 ), NaCl concentration added to the real wastewaters (0-3 g·L -1 ), and pH value (2.0-10.0), on the kinetics of COD oxidation and on the energy consumption was carefully investigated. The obtained experimental results could be well matched with a proposed kinetic model, in which the indirect oxidation mediated by electrogenerated strong oxidants would be described through a pseudo-first-order kinetic constant k. Values of k exhibited a linear increase with increasing applied current density and decreasing pH value, and an exponential increase with NaCl concentration. Furthermore, high oxidation kinetics resulted in low specific energy consumption, but this conclusion was not suitable to the results obtained under different applied current density. Under the optimum operational conditions, it only took 3 h to complete remove the COD in the real textile wastewaters and the specific energy consumption could be as low as 11.12 kWh·kg -1  COD. The obtained results, low energy consumption and short electrolysis time, allowed to conclude that the electrochemical oxidation based on BDD anodes would have practical industrial application for the treatment of real textile wastewater. Copyright © 2016 Elsevier Ltd. All rights reserved.

Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

Science.gov (United States)

Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

2015-03-01

Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements. Copyright © 2014 Elsevier B.V. All rights reserved.

Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

Directory of Open Access Journals (Sweden)

Vasile Ostafe

2008-07-01

Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

Bragg superlattice for obtaining individual photoluminescence of diamond color centers in dense 3D ensembles

Science.gov (United States)

Kukushkin, V. A.

2017-10-01

A way to significantly increase the spatial resolution of the color center photoluminescence collection in chemically vapor-deposited (CVD) diamond at a fixed exciting beam focal volume is suggested. It is based on the creation of a narrow waveguide for the color center photoluminescence with a small number of allowed vertical indices of guided modes. The waveguide is formed between the top surface of a CVD diamond film and an underlaid mirror—a Bragg superlattice made of interchanging high- and low boron-doped layers of CVD diamond. The guided color center photoluminescence is extracted through the top surface of a CVD diamond film with the frustrated total internal reflection method. According to the results of simulation made for a case when color centers are nitrogen-vacancy (NV) centers, the suggested way allows to increase the maximal value of the NV center concentration still compatible with selective collection of their photoluminescence by several times at a fixed exciting beam focal volume. This increase is provided without the deterioration of the NV center photoluminescence collection efficiency.

Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

Science.gov (United States)

Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

2018-05-01

Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

Oxidation kinetic changes of UO2 by additive addition and irradiation

International Nuclear Information System (INIS)

You, Gil-Sung; Kim, Keon-Sik; Min, Duck-Kee; Ro, Seung-Gy

2000-01-01

The kinetic changes of air-oxidation of UO 2 by additive addition and irradiation were investigated. Several kinds of specimens, such as unirradiated-UO 2 , simulated-UO 2 for spent PWR fuel (SIMFUEL), unirradiated-Gd-doped UO 2 , irradiated-UO 2 and -Gd-doped UO 2 , were used for these experiments. The oxidation results represented that the kinetic patterns among those samples are remarkably different. It was also revealed that the oxidation kinetics of irradiated-UO 2 seems to be more similar to that of unirradiated-Gd-doped UO 2 than that of SIMFUEL

Metal ion analysis in contaminated water samples using anodic stripping voltammetry and a nanocrystalline diamond thin-film electrode

International Nuclear Information System (INIS)

Sonthalia, Prerna; McGaw, Elizabeth; Show, Yoshiyuki; Swain, Greg M.

2004-01-01

Boron-doped nanocrystalline diamond thin-film electrodes were employed for the detection and quantification of Ag (I), Cu (II), Pb (II), Cd (II), and Zn (II) in several contaminated water samples using anodic stripping voltammetric (ASV). Diamond is an alternate electrode that possesses many of the same attributes as Hg and, therefore, appears to be a viable material for this electroanalytical measurement. The nanocrystalline form has been found to perform slightly better than the more conventional microcrystalline form of diamond in this application. Differential pulse voltammetry (DPASV) was used to detect these metal ions in lake water, well water, tap water, wastewater treatment sludge, and soil. The electrochemical results were compared with data from inductively coupled plasma mass spectrometric (ICP-MS) and or atomic absorption spectrometric (AAS) measurements of the same samples. Diamond is shown to function well in this electroanalytical application, providing a wide linear dynamic range, a low limit of quantitation, excellent response precision, and good response accuracy. For the analysis of Pb (II), bare diamond provided a response nearly identical to that obtained with a Hg-coated glassy carbon electrode

Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide.

Science.gov (United States)

Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

2016-08-09

The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20-500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection.

Diamond identifaction

International Nuclear Information System (INIS)

1976-01-01

X-ray topography on diamonds allows for unique identification of diamonds. The method described consists of the registration of crystal defects, inclusions etc. of a diamond, resulting in a 'finger print' of the individual jewel which can only be changed by its complete destruction

Hybrid laser technology and doped biomaterials

Science.gov (United States)

Jelínek, Miroslav; Zemek, Josef; Remsa, Jan; Mikšovský, Jan; Kocourek, Tomáš; Písařík, Petr; Trávníčková, Martina; Filová, Elena; Bačáková, Lucie

2017-09-01

Hybrid laser-based technologies for deposition of new types of doped thin films are presented. The focus is on arrangements combining pulsed laser deposition (PLD) with magnetron sputtering (MS), and on the setup with two simultaneously running PLD systems (dual PLD). Advantages and disadvantages of both arrangements are discussed. Layers of different dopants concentration were prepared. Experience with deposition of chromium and titanium doped diamond-like carbon (DLC) films for potential coating of bone implants is presented. Properties of the layers prepared by both technologies are compared and discussed. The suitability of the layers for colonization with human bone marrow mesenchymal stem cells and human osteoblast-like cells, were also evaluated under in vitro conditions.

Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

Energy Technology Data Exchange (ETDEWEB)

Qi, Yao; Long, Hangyu [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Ma, Li, E-mail: marycsupm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Quiping, E-mail: qiupwei@csu.edu.cn [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Li, Site [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Hu, Jingyuan [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Liu, Peizhi [Key laboratory of interface science and engineering in advanced materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,PR China (China); Wang, Yijia [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Meng, Lingcong [Department of Chemistry, University of Warwick, Coventry, West Midlands CV4 7AL (United Kingdom)

2016-12-30

Highlights: • BDD electrodes with different thickness have been fabricated. • BDD electrodes are used for simultaneous detection of DA and AA. • Anodic pretreatment enhance the separation of DA and AA oxidation peak potential. • Thicker BDD electrode show better performance for DA detection coexisting with AA. - Abstract: In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe{sub 3} (CN) {sub 6}]{sup 3−/4−} redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

Enhancing the electrochemical oxidation of acid-yellow 36 azo dye using boron-doped diamond electrodes by addition of ferrous ion

International Nuclear Information System (INIS)

Villanueva-Rodriguez, M.; Hernandez-Ramirez, A.; Peralta-Hernandez, J.M.; Bandala, Erick R.; Quiroz-Alfaro, Marco A.

2009-01-01

This work shows preliminary results on the electrochemical oxidation process (EOP) using boron-doped diamond (BDD) electrode for acidic yellow 36 oxidation, a common azo dye used in textile industry. The study is centred in the synergetic effect of ferrous ions and hydroxyl free radicals for improving discoloration of azo dye. The assays were carried out in a typical glass cell under potentiostatic conditions. On experimental conditions, the EOP was able to partially remove the dye from the reaction mixture. The reaction rate increased significantly by addition of Fe 2+ (1 mM as ferrous sulphate) to the system and by (assumed) generation of ferrate ion [Fe(VI)] over BDD electrode. Ferrate is considered as a highly oxidizing reagent capable of removing the colorant from the reaction mixture, in synergistic action with the hydroxyl radicals produced on the BDD surface. Further increases in the Fe 2+ concentration lead to depletion of the reaction rate probably due to the hydroxyl radical scavenging effect of Fe 2+ excess in the system.

A Comparative Analysis of 2-(Thiocyanomethylthio-Benzothiazole Degradation Using Electro-Fenton and Anodic Oxidation on a Boron-Doped Diamond Electrode

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Armando Vázquez

2018-01-01

Full Text Available 2-(Thiocyanomethylthio-benzothiazole (TCMTB is used as fungicide in the paper, tannery, paint, and coatings industries, and its study is important as it is considered toxic to aquatic life. In this study, a comparison of direct anodic oxidation (AO using a boron-doped diamond electrode (BDD and electro-Fenton (EF processes for TCMTB degradation in acidic chloride and sulfate media using a FM01-LC reactor was performed. The results of the electrolysis processes studied in the FM01-LC reactor showed a higher degradation of TCMTB with the anodic oxidation process than with the electro-Fenton process, reaching 81% degradation for the former process versus 47% degradation for the latter process. This difference was attributed to the decrease in H2O2 during the EF process, due to parallel oxidation of chlorides. The degradation rate and current efficiency increased as a function of volumetric flow rate, indicating that convection promotes anodic oxidation and electro-Fenton processes. The results showed that both AO and EF processes could be useful strategies for TCMTB toxicity reduction in wastewaters.

Combined addition of nano diamond and nano SiO2, an effective method to improve the in-field critical current density of MgB2 superconductor

International Nuclear Information System (INIS)

Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P.; Chattopadhyay, M.K.; Roy, S.B.; Syamaprasad, U.

2011-01-01

Highlights: → Both nano diamond and nano SiO 2 caused significant modifications in the structural properties of pure MgB 2 sample. → Reduction in T C for the best codoped sample was approximately 2 K. → The best codoped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T. → The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J C . -- Abstract: MgB 2 bulk samples added with nano SiO 2 and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg 2 Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO 2 /diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J C (H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J C (H) of co-doped samples were significantly higher and the best co-doped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T.

Diamond identification

International Nuclear Information System (INIS)

Lang, A.R.

1979-01-01

Methods of producing sets of records of the internal defects of diamonds as a means of identification of the gems by x-ray topography are described. To obtain the records one can either use (a) monochromatic x-radiation reflected at the Bragg angle from crystallographically equivalent planes of the diamond lattice structure, Bragg reflections from each such plane being recorded from a number of directions of view, or (b) white x-radiation incident upon the diamond in directions having a constant angular relationship to each equivalent axis of symmetry of the diamond lattice structure, Bragg reflections being recorded for each direction of the incident x-radiation. By either method an overall point-to-point three dimensional representation of the diamond is produced. (U.K.)

Square-wave voltammetric determination of fungicide fenfuram in real samples on bare boron-doped diamond electrode, and its corrosion properties on stainless steels used to produce agricultural tools

International Nuclear Information System (INIS)

Brycht, Mariola; Skrzypek, Sławomira; Kaczmarska, Kinga; Burnat, Barbara; Leniart, Andrzej; Gutowska, Natalia

2015-01-01

Graphical abstract: Display Omitted -- Highlights: • A bare boron-doped diamond electrode was first used to determine fenfuram. • A sensitive voltammetric procedure for the determination of fenfuram was developed. • The sensor showed high sensitivity, selectivity, and wide linear range. • The procedure was successfully applied to detect fenfuram in real samples. • The effect of fenfuram on the uniform and pitting corrosion of steel was stated. -- Abstract: A simple, selective, and sensitive electroanalytical method for the determination of a novel fungicide, fenfuram (Fnf), on a bare boron-doped diamond electrode (BDDE) using square-wave voltammetry (SWV) was developed. For the first time, the electrochemical oxidation of Fnf at BDDE at about 1.5 V vs. Ag/AgCl reference electrode in 0.35 mol L −1 sulfuric acid was investigated. To select the optimum experimental conditions, the effects of the supporting electrolyte, pH, frequency, amplitude, and step potential were studied. The developed method allowed the determination of Fnf in the concentration range of 2.4 × 10 −5 to 2.6 × 10 −4 mol L −1 (LOD = 6.3 × 10 −6 mol L −1 , LOQ = 2.1 × 10 −5 mol L −1 ). The validation of the method was carried out. The proposed procedure was successfully applied to determine Fnf in the spiked natural water samples collected from Polish rivers and in the spiked triticale seed samples by the standard addition method. To understand the Fnf electrode mechanism, the cyclic voltammetry (CV) technique was applied. The oxidation mechanism was also confirmed using mass spectrometry with the electrospray ionization (ESI-MS) technique. Using electrochemical techniques, the effect of Fnf on the corrosion properties of stainless steel which is used to produce agricultural tools was studied

Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Písařík, Petr; Jelínek, Miroslav; Kocourek, Tomáš; Zezulová, M.; Remsa, Jan; Jurek, Karel

2014-01-01

Roč. 117, č. 1 (2014), s. 83-88 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : diamond like carbon * chromium * contact angle * surface free energy * dual laser deposition * zeta potential Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

Relaxation dynamics and transformation kinetics of deeply supercooled water: Temperature, pressure, doping, and proton/deuteron isotope effects.

Science.gov (United States)

Lemke, Sonja; Handle, Philip H; Plaga, Lucie J; Stern, Josef N; Seidl, Markus; Fuentes-Landete, Violeta; Amann-Winkel, Katrin; Köster, Karsten W; Gainaru, Catalin; Loerting, Thomas; Böhmer, Roland

2017-07-21

Above its glass transition, the equilibrated high-density amorphous ice (HDA) transforms to the low-density pendant (LDA). The temperature dependence of the transformation is monitored at ambient pressure using dielectric spectroscopy and at elevated pressures using dilatometry. It is found that near the glass transition temperature of deuterated samples, the transformation kinetics is 300 times slower than the structural relaxation, while for protonated samples, the time scale separation is at least 30 000 and insensitive to doping. The kinetics of the HDA to LDA transformation lacks a proton/deuteron isotope effect, revealing that this process is dominated by the restructuring of the oxygen network. The x-ray diffraction experiments performed on samples at intermediate transition stages reflect a linear combination of the LDA and HDA patterns implying a macroscopic phase separation, instead of a local intermixing of the two amorphous states.

Relaxation dynamics and transformation kinetics of deeply supercooled water: Temperature, pressure, doping, and proton/deuteron isotope effects

Science.gov (United States)

Lemke, Sonja; Handle, Philip H.; Plaga, Lucie J.; Stern, Josef N.; Seidl, Markus; Fuentes-Landete, Violeta; Amann-Winkel, Katrin; Köster, Karsten W.; Gainaru, Catalin; Loerting, Thomas; Böhmer, Roland

2017-07-01

Above its glass transition, the equilibrated high-density amorphous ice (HDA) transforms to the low-density pendant (LDA). The temperature dependence of the transformation is monitored at ambient pressure using dielectric spectroscopy and at elevated pressures using dilatometry. It is found that near the glass transition temperature of deuterated samples, the transformation kinetics is 300 times slower than the structural relaxation, while for protonated samples, the time scale separation is at least 30 000 and insensitive to doping. The kinetics of the HDA to LDA transformation lacks a proton/deuteron isotope effect, revealing that this process is dominated by the restructuring of the oxygen network. The x-ray diffraction experiments performed on samples at intermediate transition stages reflect a linear combination of the LDA and HDA patterns implying a macroscopic phase separation, instead of a local intermixing of the two amorphous states.

Diamonds on Diamond: structural studies at extreme conditions on the Diamond Light Source.

Science.gov (United States)

McMahon, M I

2015-03-06

Extreme conditions (EC) research investigates how the structures and physical and chemical properties of materials change when subjected to extremes of pressure and temperature. Pressures in excess of one million times atmospheric pressure can be achieved using a diamond anvil cell, and, in combination with high-energy, micro-focused radiation from a third-generation synchrotron such as Diamond, detailed structural information can be obtained using either powder or single-crystal diffraction techniques. Here, I summarize some of the research drivers behind international EC research, and then briefly describe the techniques by which high-quality diffraction data are obtained. I then highlight the breadth of EC research possible on Diamond by summarizing four examples from work conducted on the I15 and I19 beamlines, including a study which resulted in the first research paper from Diamond. Finally, I look to the future, and speculate as to the type of EC research might be conducted at Diamond over the next 10 years. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

Erratum to: Influence of boron doping on mechanical and tribological ...

Indian Academy of Sciences (India)

2016-08-26

Aug 26, 2016 ... Erratum to: Influence of boron doping on mechanical and tribological properties in multilayer CVD-diamond coating systems. SAJAD HUSSAIN DIN M A SHAH N A SHEIKH K A NAJAR K RAMASUBRAMANIAN S BALAJI M S RAMACHANDRA RAO. Volume 39 Issue 7 December 2016 pp 1763-1763 ...

Selected topics related to the transport and superconductivity in boron-doped diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Nesládek, Miloš

2008-01-01

Roč. 9, č. 4 (2008), 044101/1-044101/6 ISSN 1468-6996 R&D Projects: GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.267, year: 2008

Superconductive B-doped nanocrystalline diamond thin films: Electrical transport and Raman spectra

Czech Academy of Sciences Publication Activity Database

Nesládek, M.; Tromson, D.; Mer, Ch.; Bergonzo, P.; Hubík, Pavel; Mareš, Jiří J.

2006-01-01

Roč. 88, č. 23 (2006), 232111/1-232111/3 ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * superconductivity * magnetoresistance * Raman spectroscopy * Fano resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.977, year: 2006

Mo doped DLC nanocomposite coatings with improved mechanical and blood compatibility properties

Energy Technology Data Exchange (ETDEWEB)

Tang, X.S. [School of Physics Science and Technology, Zhanjiang Normal University, Zhanjiang 524048 (China); Development Center for New Materials Engineering and Technology in Universities of Guangdong, Zhanjiang 524048 (China); Wang, H.J.; Feng, L. [School of Physics Science and Technology, Zhanjiang Normal University, Zhanjiang 524048 (China); Shao, L.X. [School of Physics Science and Technology, Zhanjiang Normal University, Zhanjiang 524048 (China); Development Center for New Materials Engineering and Technology in Universities of Guangdong, Zhanjiang 524048 (China); Zou, C.W., E-mail: qingyihaiyanas@163.com [School of Physics Science and Technology, Zhanjiang Normal University, Zhanjiang 524048 (China); Development Center for New Materials Engineering and Technology in Universities of Guangdong, Zhanjiang 524048 (China)

2014-08-30

Highlights: • Mo doped diamond like carbon coatings were deposited by magnetron sputtering. • The blood compatibility of Mo-DLC coatings was observed through platelet adhesion. • The amount of thrombus on the Mo-DLC is much less than that of pyrolytic carbon. - Abstract: Mo (molybdenum) doped diamond like carbon (Mo-DLC) coatings with improved mechanical and blood compatibility properties were deposited by closed field unbalanced magnetron sputtering. The undoped and Mo-doped DLC coatings were analyzed by various characterization techniques such as Raman spectra, Atomic force microscopy, and temperature-dependent frictional wear testing. The results showed that the Mo-DLC coating with low Mo concentration was a effective protective coating with reduced residual stress and increased cohesive strength, and kept good wear resistance at the ambient temperature of 500 °C. The blood compatibility of Mo-DLC coatings was investigated by platelet adhesion. The results showed that the amount of thrombus on the Mo-DLC nanocomposite coatings was much less than that of thrombus on pyrolytic carbon films. The Mo-DLC nanocomposite coatings would be a new kind of promising materials applied to artificial heart valve and endovascula stent.

Mo doped DLC nanocomposite coatings with improved mechanical and blood compatibility properties

International Nuclear Information System (INIS)

Tang, X.S.; Wang, H.J.; Feng, L.; Shao, L.X.; Zou, C.W.

2014-01-01

Highlights: • Mo doped diamond like carbon coatings were deposited by magnetron sputtering. • The blood compatibility of Mo-DLC coatings was observed through platelet adhesion. • The amount of thrombus on the Mo-DLC is much less than that of pyrolytic carbon. - Abstract: Mo (molybdenum) doped diamond like carbon (Mo-DLC) coatings with improved mechanical and blood compatibility properties were deposited by closed field unbalanced magnetron sputtering. The undoped and Mo-doped DLC coatings were analyzed by various characterization techniques such as Raman spectra, Atomic force microscopy, and temperature-dependent frictional wear testing. The results showed that the Mo-DLC coating with low Mo concentration was a effective protective coating with reduced residual stress and increased cohesive strength, and kept good wear resistance at the ambient temperature of 500 °C. The blood compatibility of Mo-DLC coatings was investigated by platelet adhesion. The results showed that the amount of thrombus on the Mo-DLC nanocomposite coatings was much less than that of thrombus on pyrolytic carbon films. The Mo-DLC nanocomposite coatings would be a new kind of promising materials applied to artificial heart valve and endovascula stent

Thermoluminescence dosimetry properties and kinetic parameters of lithium potassium borate glass co-doped with titanium and magnesium oxides

International Nuclear Information System (INIS)

Hashim, S.; Alajerami, Y.S.M.; Ramli, A.T.; Ghoshal, S.K.; Saleh, M.A.; Abdul Kadir, A.B.; Saripan, M.I.; Alzimami, K.; Bradley, D.A.; Mhareb, M.H.A.

2014-01-01

Lithium potassium borate (LKB) glasses co-doped with TiO 2 and MgO were prepared using the melt quenching technique. The glasses were cut into transparent chips and exposed to gamma rays of 60 Co to study their thermoluminescence (TL) properties. The TL glow curve of the Ti-doped material featured a single prominent peak at 230 °C. Additional incorporation of MgO as a co-activator enhanced the TL intensity threefold. LKB:Ti,Mg is a low-Z material (Z eff =8.89) with slow signal fading. Its radiation sensitivity is 12 times lower that the sensitivity of TLD-100. The dose response is linear at doses up to 10 3 Gy. The trap parameters, such as the kinetics order, activation energy, and frequency factor, which are related to the glow peak, were determined using TolAnal software. - Highlights: • Lithium potassium borate glass doped with Ti and Mg was prepared. • The material is close to soft tissues in terms of Zeff. • The radiation sensitivity is about 12 times lower than that of TLD-100. • The signal fades about 8% in 10 days and 17% in 3 months

Structure, adhesive strength and electrochemical performance of nitrogen doped diamond-like carbon thin films deposited via DC magnetron sputtering.

Science.gov (United States)

Khun, N W; Liu, E; Krishna, M D

2010-07-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-Si (100) substrates by DC magnetron sputtering with different nitrogen flow rates at a substrate temperature of about 100 degrees C. The chemical bonding structure of the films was characterized by X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The adhesive strength and surface morphology of the films were studied using micro-scratch tester and scanning electron microscope (SEM), respectively. The electrochemical performance of the films was evaluated by potentiodynamic polarization testing and linear sweep voltammetry. The electrolytes used for the electrochemical tests were deaerated and unstirred 0.47 M KCl aqueous solution for potentiodynamic polarization testing and 0.2 M KOH and 0.1 M KCl solutions for voltammetric analysis. It was found that the DLC:N films could well passivate the underlying substrates though the corrosion resistance of the films decreased with increased nitrogen content in the films. The DLC:N films showed wide potential windows in the KOH solution, in which the detection ability of the DLC:N films to trace lead of about 1 x 10(-3) M Pb(2+) was also tested.

Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

Energy Technology Data Exchange (ETDEWEB)

Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)], E-mail: brillas@ub.edu

2009-02-28

The degradation of a 41 mg dm{sup -3} ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O{sub 2}-diffusion cathode. Heterogeneous hydroxyl radical ({center_dot}OH) is generated at the anode surface from water oxidation, while homogeneous {center_dot}OH is formed from Fenton's reaction between Fe{sup 2+} and H{sub 2}O{sub 2} generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of {center_dot}OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe{sup 2+} content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures.

Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

International Nuclear Information System (INIS)

Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita; Brillas, Enric

2009-01-01

The degradation of a 41 mg dm -3 ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O 2 -diffusion cathode. Heterogeneous hydroxyl radical (·OH) is generated at the anode surface from water oxidation, while homogeneous ·OH is formed from Fenton's reaction between Fe 2+ and H 2 O 2 generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of ·OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe 2+ content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures

Highly sensitive electrochemical biosensor for bisphenol A detection based on a diazonium-functionalized boron-doped diamond electrode modified with a multi-walled carbon nanotube-tyrosinase hybrid film.

Science.gov (United States)

Zehani, Nedjla; Fortgang, Philippe; Saddek Lachgar, Mohamed; Baraket, Abdoullatif; Arab, Madjid; Dzyadevych, Sergei V; Kherrat, Rochdi; Jaffrezic-Renault, Nicole

2015-12-15

A highly sensitive electrochemical biosensor for the detection of Bisphenol A (BPA) in water has been developed by immobilizing tyrosinase onto a diazonium-functionalized boron doped diamond electrode (BDD) modified with multi-walled carbon nanotubes (MWCNTs). The fabricated biosensor exhibits excellent electroactivity towards o-quinone, a product of this enzymatic reaction of BPA oxidation catalyzed by tyrosinase. The developed BPA biosensor displays a large linear range from 0.01 nM to 100 nM, with a detection limit (LOD) of 10 pM. The feasibility of the proposed biosensor has been demonstrated on BPA spiked water river samples. Therefore, it could be a promising and reliable analytical tool for on-site monitoring of BPA in waste water. Copyright © 2015 Elsevier B.V. All rights reserved.

Ir4+-Doped NiFe LDH to expedite hydrogen evolution kinetics as a Pt-like electrocatalyst for water splitting.

Science.gov (United States)

Chen, Qian-Qian; Hou, Chun-Chao; Wang, Chuan-Jun; Yang, Xiao; Shi, Rui; Chen, Yong

2018-06-06

NiFe-layered double hydroxide (NiFe LDH) is a state-of-the-art oxygen evolution reaction (OER) electrocatalyst, yet it suffers from rather poor catalytic activity for the hydrogen evolution reaction (HER) due to its extremely sluggish water dissociation kinetics, severely restricting its application in overall water splitting. Herein, we report a novel strategy to expedite the HER kinetics of NiFe LDH by an Ir4+-doping strategy to accelerate the water dissociation process (Volmer step), and thus this catalyst exhibits superior and robust catalytic activity for finally oriented overall water splitting in 1 M KOH requiring only a low initial voltage of 1.41 V delivering at 20 mA cm-2 for more than 50 h.

Detection of diamonds

International Nuclear Information System (INIS)

Hansen, J.O.; Blondeel, E.J.G.; Taylor, G.T.

1991-01-01

Diamond particles are distinguished from non-diamond, associated particles on the basis of their higher refractive index. The particles are brought to a specific location, typically in a stream of water flowing full in a vertical duct, and a beam of collimated electromagnetic radiation is directed at them. An array of radiation detectors is provided to detect refracted and/or reflected radiation. The array is so configured that the responses of the detectors, considered collectively, will be indicative of the presence of a diamond when a diamond is in fact present. However, when a particle having a substantially lower refractive index is present, the responses of the detectors will not be so indicative. The diamond and non-diamond particles can subsequently be sorted from one another

Superconductivity in doped two-leg ladder cuprates

International Nuclear Information System (INIS)

Qin Jihong; Yuan Feng; Feng Shiping

2006-01-01

Within the t-J ladder model, superconductivity with a modified d-wave symmetry in doped two-leg ladder cuprates is investigated based on the kinetic energy driven superconducting mechanism. It is shown that the spin-liquid ground-state at the half-filling evolves into the superconducting ground-state upon doping. In analogy to the doping dependence of the superconducting transition temperature in the planar cuprate superconductors, the superconducting transition temperature in doped two-leg ladder cuprates increases with increasing doping in the underdoped regime, and reaches a maximum in the optimal doping, then decreases in the overdoped regime

Superior hydrogen storage kinetics of MgH{sub 2} nanoparticles doped with TiF{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Xie, L. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Liu, Y. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Wang, Y.T. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Zheng, J. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li, X.G. [Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China) and College of Engineering, Peking University, Beijing 100871 (China)]. E-mail: xgli@pku.edu.cn

2007-08-15

MgH{sub 2} nanoparticles were obtained by hydriding ultrafine magnesium particles which were prepared by hydrogen plasma-metal reaction. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the obtained sample is almost pure MgH{sub 2} phase, without residual magnesium and with an average particle size of {approx}300 nm. Milled with 5 wt.% TiF{sub 3} as a doping precursor in a hydrogen atmosphere, the sample desorbed 4.5 wt.% hydrogen in 6 min under an initial hydrogen pressure of {approx}0.001 bar at 573 K and absorbed 4.2 wt.% hydrogen in 1 min under {approx}20 bar hydrogen at room temperature. Compared with MgH{sub 2} micrometer particles doped with 5 wt.% TiF{sub 3} under the same conditions as the MgH{sub 2} nanoparticles, it is suggested that decrease of particle size is beneficial for enhancing absorption capacity at low temperatures, but has no effect on desorption. In addition, the catalyst was mainly responsible for improving the sorption kinetics and its catalytic mechanism is discussed.

Structure and properties of diamond and diamond-like films

Energy Technology Data Exchange (ETDEWEB)

Clausing, R.E. [Oak Ridge National Lab., TN (United States)

1993-01-01

This section is broken into four parts: (1) introduction, (2) natural IIa diamond, (3) importance of structure and composition, and (4) control of structure and properties. Conclusions of this discussion are that properties of chemical vapor deposited diamond films can compare favorably with natural diamond, that properties are anisotropic and are a strong function of structure and crystal perfection, that crystal perfection and morphology are functions of growth conditions and can be controlled, and that the manipulation of texture and thereby surface morphology and internal crystal perfection is an important step in optimizing chemically deposited diamond films for applications.

The improvement of boron-doped diamond anode system in electrochemical degradation of p-nitrophenol by zero-valent iron

International Nuclear Information System (INIS)

Zhu Xiuping; Ni Jinren

2011-01-01

Boron-doped diamond (BDD) electrodes are promising anode materials in electrochemical treatment of wastewaters containing bio-refractory organic compounds due to their strong oxidation capability and remarkable corrosion stability. In order to further improve the performance of BDD anode system, electrochemical degradation of p-nitrophenol were initially investigated at the BDD anode in the presence of zero-valent iron (ZVI). The results showed that under acidic condition, the performance of BDD anode system containing zero-valent iron (BDD-ZVI system) could be improved with the joint actions of electrochemical oxidation at the BDD anode (39.1%), Fenton's reaction (28.5%), oxidation–reduction at zero-valent iron (17.8%) and coagulation of iron hydroxides (14.6%). Moreover, it was found that under alkaline condition the performance of BDD-ZVI system was significantly enhanced, mainly due to the accelerated release of Fe(II) ions from ZVI and the enhanced oxidation of Fe(II) ions. The dissolved oxygen concentration was significantly reduced by reduction at the cathode, and consequently zero-valent iron corroded to Fe(II) ions in anaerobic highly alkaline environments. Furthermore, the oxidation of released Fe(II) ions to Fe(III) ions and high-valent iron species (e.g., FeO 2+ , FeO 4 2− ) was enhanced by direct electrochemical oxidation at BDD anode.

Weightfield2: A fast simulator for silicon and diamond solid state detector

Energy Technology Data Exchange (ETDEWEB)

Cenna, Francesca, E-mail: cenna@to.infn.it [INFN Torino, Via Pietro Giuria 1, Torino (Italy); Cartiglia, N. [INFN Torino, Via Pietro Giuria 1, Torino (Italy); Friedl, M.; Kolbinger, B. [HEPHY Vienna (Austria); Sadrozinski, H.F.-W.; Seiden, A.; Zatserklyaniy, Andriy; Zatserklyaniy, Anton [University of California, Santa Cruz (United States)

2015-10-01

We have developed a fast simulation program to study the performance of silicon and diamond detectors, Weightfield2. The program uses GEANT4 libraries to simulate the energy released by an incoming particle in silicon (or diamond), and Ramo's theorem to generate the induced signal current. A graphical interface allows the user to configure many input parameters such as the incident particle, sensor geometry, presence and value of internal gain, doping of silicon sensor and its operating conditions, the values of an external magnetic field, ambient temperature and thermal diffusion. A simplified electronics simulator is also implemented to include the response of an oscilloscope and front-end electronics. The program has been validated by comparing its predictions for minimum ionizing and α particles with measured signals and TCAD simulations, finding very good agreement in both cases.

On the role of salts for the treatment of wastewaters containing pharmaceuticals by electrochemical oxidation using a boron doped diamond anode

International Nuclear Information System (INIS)

Lan, Yandi; Coetsier, Clémence; Causserand, Christel; Groenen Serrano, Karine

2017-01-01

Refractory pharmaceuticals remain in biologically treated wastewater and are continuously discharged into aquatic systems due to their limited biodegradability. Electrochemical oxidation is promising for the treatment of such refractory compounds, in particular using a boron doped diamond (BDD) anode. This study investigates the role of salts, such as sulfates and chlorides in the electrochemical treatment of wastewater. The presence of sulfates accelerated the removal of ciprofloxacin and sulfamethoxazole, but had no effect on the oxidation of salbutamol. This comparison highlights the selectivity of the reaction between organics and sulfate radicals. The addition of chlorides into the solution led to a remarkably-faster degradation of ciprofloxacin. However, incomplete mineralization was observed at high current densities due to the significant formation of halogenated organic compounds (AOX). The formation of refractory and toxic compounds such as ClO_4"− and AOX can be limited under the control of (i) applied current intensity and (ii) duration of electrolysis. Electrochemical oxidation of concentrated biologically-treated hospital wastewater investigated the excellent removal of biorefractory pharmaceuticals and confirmed the acceleration effect of salts on pharmaceutical degradation.

Fabrication and application of boron doped diamond BDD electrode in olive mill wastewater treatment in Jordan

Directory of Open Access Journals (Sweden)

Inshad Jum'h

2017-12-01

Full Text Available A boron doped diamond (BDD electrode was employed in an electrochemical reactor to oxidize the phenolic content of Jordanian olive mill wastewater. The BDD anode was fabricated using hot filament chemical vapor deposition on niobium and the morphology of the BDD electrode was characterized using an atomic force microscope. Then, electrolysis batch runs were carried out at laboratory scale to test the effect of different process parameters, namely, initial chemical oxygen demand (COD load (72.9, 33.8, and 0.18 g/L, the addition of Na2SO4 as supporting electrolyte, and adding NaCl along with Na2SO4, on the efficiency of the treatment process. The results were reported in terms of COD, color and turbidity removal, and pH variation. The experiments revealed that electrochemical oxidation using BDD significantly reduced the COD by 85% with no supporting electrolytes. It was observed that adding Na2SO4 with NaCl brought the COD removal to higher than 90% after 7 hours of treatment for COD loads of 72.9 and 33.8 g/L, and after 2 hours for a COD load of 0.18 g/L. Likewise, color was completely removed regardless of the initial COD load. The turbidity for samples with 72.9 and 33.8 g/L as COD load reached a minimal value of 2.5 and 1 NTU respectively.

AlTiN layer effect on mechanical properties of Ti-doped diamond-like carbon composite coatings

International Nuclear Information System (INIS)

Pang Xiaolu; Yang Huisheng; Gao Kewei; Wang Yanbin; Volinsky, Alex A.

2011-01-01

Ti/Ti-doped diamond-like carbon (DLC) and Ti/AlTiN/Ti-DLC composite coatings were deposited by magnetron sputtering on W18Cr4V high speed steel substrates. The effect of the AlTiN support layer on the properties of these composite coatings was investigated through microstructure and mechanical properties characterization, including hardness, elastic modulus, coefficient of friction and wear properties measured by scanning electron microscopy, Raman spectroscopy, scratch and ball-on-disk friction tests. Ti and AlTiN interlayers have a columnar structure with 50-80 nm grains. The hardness and elastic modulus of Ti/Ti-DLC and Ti/AlTiN/Ti-DLC coatings is 25.9 ± 0.4, 222.2 ± 6.3 GPa and 19.3 ± 1, 205.6 ± 6.7 GPa, respectively. Adhesion of Ti-DLC, Ti/AlTiN/Ti-DLC and AlTiN/Ti-DLC coatings expressed as the critical lateral force is 26.5 N, 38.2 N, and 47.8 N, respectively. Substrate coefficient of friction without coatings is 0.44, and it is 0.1 for Ti/Ti-DLC and Ti/AlTiN/Ti-DLC coatings. Wear resistance of Ti/AlTiN/Ti-DLC composite coatings is much higher than Ti/Ti-DLC coatings based on the wear track width of 169.8 and 73.2 μm, respectively, for the same experimental conditions.

Adhesion and differentiation of Saos-2 osteoblast-like cells on chromium-doped diamond-like carbon coatings.

Science.gov (United States)

Filova, Elena; Vandrovcova, Marta; Jelinek, Miroslav; Zemek, Josef; Houdkova, Jana; Jan Remsa; Kocourek, Tomas; Stankova, Lubica; Bacakova, Lucie

2017-01-01

Diamond-like carbon (DLC) thin films are promising for use in coating orthopaedic, dental and cardiovascular implants. The problem of DLC layers lies in their weak layer adhesion to metal implants. Chromium is used as a dopant for improving the adhesion of DLC films. Cr-DLC layers were prepared by a hybrid technology, using a combination of pulsed laser deposition (PLD) from a graphite target and magnetron sputtering. Depending on the deposition conditions, the concentration of Cr in the DLC layers moved from zero to 10.0 at.%. The effect of DLC layers with 0.0, 0.9, 1.8, 7.3, 7.7 and 10.0 at.% Cr content on the adhesion and osteogenic differentiation of human osteoblast-like Saos-2 cells was assessed in vitro. The DLC samples that contained 7.7 and 10.0 at.% of Cr supported cell spreading on day 1 after seeding. On day three after seeding, the most apparent vinculin-containing focal adhesion plaques were also found on samples with higher concentrations of chromium. On the other hand, the expression of type I collagen and alkaline phosphatase at the mRNA and protein level was the highest on Cr-DLC samples with a lower concentration of Cr (0-1.8 at.%). We can conclude that higher concentrations of chromium supported cell adhesion; however DLC and DLC doped with a lower concentration of chromium supported osteogenic cell differentiation.

Noble gas studies in vapor-growth diamonds: Comparison with shock-produced diamonds and the origin of diamonds in ureilites

Energy Technology Data Exchange (ETDEWEB)

Matsuda, Junichi; Fukunaga, Kazuya; Ito, Keisuke (Kobe Univ. (Japan))

1991-07-01

The authors synthesized vapor-trowth diamonds by two kinds of Chemical Vapor Deposition (CVD) using microwave (MWCVD) and hot filament (HFCVD) ionization of gases, and examined elemental abundances and isotopic compositions of the noble gases trapped in the diamonds. It is remarkable that strong differences existed in the noble gas concentrations in the two kinds of CVD diamonds: large amounts of noble gases were trapped in the MWCVD diamonds, but not in the HFCVD diamonds. The heavy noble gases (Ar to Xe) in the MWCVD diamonds were highly fractionated compared with those in the ambient atmosphere, and are in good agreement with the calculated fractionation patterns for plasma at an electron temperature of 7,000-9,000 K. These results strongly suggest that the trapping mechanism of noble gases in CVD diamonds is ion implantation during diamond growth. The degrees of fractionation of heavy noble gases were also in good agreement with those in ureilites. The vapor-growth hypothesis is discussed in comparison with the impact-shock hypothesis as a better model for the origin of diamonds in ureilites. The diamond (and graphite, amorphous carbon, too) may have been deposited on early condensates such as Re, Ir, W, etc. This model explains the chemical features of vein material in ureilites; the refractory siderophile elements are enriched in carbon and noble gases and low in normal siderophiles. The vapor-growth model is also compatible with the oxygen isotopic data of ureilites which suggests that nebular processes are primarily responsible for the composition of ureilites.

Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

Energy Technology Data Exchange (ETDEWEB)

Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

2012-07-01

This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

Diamond Synthesis Employing Nanoparticle Seeds

Science.gov (United States)

Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

2014-01-01

Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

Recognition of diamond grains on surface of fine diamond grinding wheel

Institute of Scientific and Technical Information of China (English)

Fengwei HUO; Zhuji JIN; Renke KANG; Dongming GUO; Chun YANG

2008-01-01

The accurate evaluation of grinding wheel sur-face topography, which is necessary for the investigation of the grinding principle, optimism, modeling, and simu-lation of a grinding process, significantly depends on the accurate recognition of abrasive grains from the measured wheel surface. A detailed analysis of the grain size distri-bution characteristics and grain profile wavelength of the fine diamond grinding wheel used for ultra-precision grinding is presented. The requirements of the spatial sampling interval and sampling area for instruments to measure the surface topography of a diamond grinding wheel are discussed. To recognize diamond grains, digital filtering is used to eliminate the high frequency disturb-ance from the measured 3D digital surface of the grinding wheel, the geometric features of diamond grains are then extracted from the filtered 3D digital surface, and a method based on the grain profile frequency characteris-tics, diamond grain curvature, and distance between two adjacent diamond grains is proposed. A 3D surface pro-filer based on scanning white light interferometry is used to measure the 3D surface topography of a #3000 mesh resin bonded diamond grinding wheel, and the diamond grains are then recognized from the 3D digital surface. The experimental result shows that the proposed method is reasonable and effective.

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

Science.gov (United States)

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

Diazo dye Congo Red degradation using a Boron-doped diamond anode: An experimental study on the effect of supporting electrolytes.

Science.gov (United States)

Jalife-Jacobo, H; Feria-Reyes, R; Serrano-Torres, O; Gutiérrez-Granados, S; Peralta-Hernández, Juan M

2016-12-05

Diazo dye Congo Red (CR) solutions at 100mg/L, were degraded using different supporting electrolytes in an electrochemical advanced oxidation process (EAOPs), like the anodic oxidation (AOx/BDD). All experiments were carried out in a 3L flow reactor with a Boron-doped diamond (BDD) anode and stainless steel cathode (AISI 304), at 7.5, 15, 30 and 50mA/cm(2) current densities (j). Furthermore, each experiment was carried out under a flow rate of 7L/min. Additionally, HClO4, NaCl, Na2SO4, and H2SO4 were tested as supporting electrolytes at a 50mM concentration. The degradation process was at all times considerably faster in NaCl medium. Solutions containing SO4(2-) or ClO4(-) ions were less prompted to degradation due to the low oxidation power of these species into the bulk. Dissolved organic carbon (DOC) analysis, was carried out to evaluate the mineralization of CR. The degradation of CR, was evaluated with the HPLC analysis of the treated solutions. Copyright © 2016 Elsevier B.V. All rights reserved.

Diamond and Diamond-Like Materials as Hydrogen Isotope Barriers

International Nuclear Information System (INIS)

Foreman, L.R.; Barbero, R.S.; Carroll, D.W.; Archuleta, T.; Baker, J.; Devlin, D.; Duke, J.; Loemier, D.; Trukla, M.

1999-01-01

This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The purpose of this project was to develop diamond and diamond-like thin-films as hydrogen isotope permeation barriers. Hydrogen embrittlement limits the life of boost systems which otherwise might be increased to 25 years with a successful non-reactive barrier. Applications in tritium processing such as bottle filling processes, tritium recovery processes, and target filling processes could benefit from an effective barrier. Diamond-like films used for low permeability shells for ICF and HEDP targets were also investigated. Unacceptable high permeabilities for hydrogen were obtained for plasma-CVD diamond-like-carbon films

Comparison between beryllium and diamond-backing plates in diamond-anvil cells

DEFF Research Database (Denmark)

Periotto, Benedetta; Nestola, Fabrizio; Balic Zunic, Tonci

2011-01-01

A direct comparison between two complete intensity datasets, collected on the same sample loaded in two identical diamond-anvil pressure cells equipped, respectively, with beryllium and diamond backing plates was performed. The results clearly demonstrate that the use of diamond-backing plates...

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

Study of indium-defect interactions in diamond using 2-D CEEC

CERN Document Server

Storbeck, E J; Wahl, U; Connell, S H; Sellschop, J P Friedel

2000-01-01

Channeling has, since its inception, proven to be a valuable tool in locating the geometric position of atoms in the crystal lattice. Allied with powerful theoretical models, it can yield detailed information on the positions that these impurities occupy. $^{111}$In, a radioactive isotope with a conveniently short half-life, is an often-used probe of heavy-atom doping of materials. Previous work has centred on the lattice location of $^{111}$In implanted in type IIa diamond. Theoretical calculations on this `pure' system have also recently been made. We have performed the first studies of $^{111}$In implanted into various carefully selected, defect-rich diamond systems and obtained fractions for the sites occupied. The defect systems investigated include nitrogen in various configurations, boron, hydrogen and vacancies. The use of two-dimensional conversion-electron emission channeling (CEEC) has enabled the system to be studied in greater detail than with conventional one-dimensional CEEC. Coupled with the a...

Plasma spraying method for forming diamond and diamond-like coatings

Science.gov (United States)

Holcombe, Cressie E.; Seals, Roland D.; Price, R. Eugene

1997-01-01

A method and composition for the deposition of a thick layer (10) of diamond or diamond-like material. The method includes high temperature processing wherein a selected composition (12) including at least glassy carbon is heated in a direct current plasma arc device to a selected temperature above the softening point, in an inert atmosphere, and is propelled to quickly quenched on a selected substrate (20). The softened or molten composition (18) crystallizes on the substrate (20) to form a thick deposition layer (10) comprising at least a diamond or diamond-like material. The selected composition (12) includes at least glassy carbon as a primary constituent (14) and may include at least one secondary constituent (16). Preferably, the secondary constituents (16) are selected from the group consisting of at least diamond powder, boron carbide (B.sub.4 C) powder and mixtures thereof.

Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA

Czech Academy of Sciences Publication Activity Database

Shin, D.; Tokuda, N.; Rezek, Bohuslav; Nebel, C.E.

2006-01-01

Roč. 8, - (2006), s. 844-850 ISSN 1388-2481 Institutional research plan: CEZ:AV0Z10100521 Keywords : electrochemical surface modification * single-crystalline CVD diamond * covalent DNA Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.484, year: 2006

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications.

Science.gov (United States)

Tran Thi, Thu Nhi; Morse, J; Caliste, D; Fernandez, B; Eon, D; Härtwig, J; Barbay, C; Mer-Calfati, C; Tranchant, N; Arnault, J C; Lafford, T A; Baruchel, J

2017-04-01

Bragg diffraction imaging enables the quality of synthetic single-crystal diamond substrates and their overgrown, mostly doped, diamond layers to be characterized. This is very important for improving diamond-based devices produced for X-ray optics and power electronics applications. The usual first step for this characterization is white-beam X-ray diffraction topography, which is a simple and fast method to identify the extended defects (dislocations, growth sectors, boundaries, stacking faults, overall curvature etc. ) within the crystal. This allows easy and quick comparison of the crystal quality of diamond plates available from various commercial suppliers. When needed, rocking curve imaging (RCI) is also employed, which is the quantitative counterpart of monochromatic Bragg diffraction imaging. RCI enables the local determination of both the effective misorientation, which results from lattice parameter variation and the local lattice tilt, and the local Bragg position. Maps derived from these parameters are used to measure the magnitude of the distortions associated with polishing damage and the depth of this damage within the volume of the crystal. For overgrown layers, these maps also reveal the distortion induced by the incorporation of impurities such as boron, or the lattice parameter variations associated with the presence of growth-incorporated nitrogen. These techniques are described, and their capabilities for studying the quality of diamond substrates and overgrown layers, and the surface damage caused by mechanical polishing, are illustrated by examples.

The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

KAUST Repository

Hong, Nguyenhoa

2013-10-04

We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

Dehydrogenation kinetics of pure and nickel-doped magnesium hydride investigated by in situ time-resolved powder X-ray diffraction

DEFF Research Database (Denmark)

Jensen, T.R.; Andreasen, A.; Vegge, Tejs

2006-01-01

The dehydrogenation kinetics of pure and nickel (Ni)-doped (2w/w%) magnesium hydride (MgH2) have been investigated by in situ time-resolved powder X-ray diffraction (PXD). Deactivated samples, i.e. air exposed, are investigated in order to focus on the effect of magnesium oxide (MgO) surface layers......, which might be unavoidable for magnesium (Mg)-based storage media for mobile applications. A curved position-sensitive detector covering 120 degrees in 20 and a rotating anode X-ray source provide a time resolution of 45 s and up to 90 powder pattems collected during an experiment under isothermal...... by the Johnson-Mehi-Avrami formalism in order to derive rate constants at different temperatures. The apparent activation energies for dehydrogenation of pure and Ni-doped magnesium hydride were E-A approximate to 300 and 250 kJ/mol, respectively. Differential scanning calorimetry gave, E-A = 270 k...

Combined addition of nano diamond and nano SiO{sub 2}, an effective method to improve the in-field critical current density of MgB{sub 2} superconductor

Energy Technology Data Exchange (ETDEWEB)

Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P. [National Institute for Interdisciplinary Science and Technology (CSIR), Trivandrum 695019 (India); Chattopadhyay, M.K.; Roy, S.B. [Magnetic and Superconducting Materials Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Syamaprasad, U., E-mail: syamcsir@gmail.com [National Institute for Interdisciplinary Science and Technology (CSIR), Trivandrum 695019 (India)

2011-11-15

Highlights: {yields} Both nano diamond and nano SiO{sub 2} caused significant modifications in the structural properties of pure MgB{sub 2} sample. {yields} Reduction in T{sub C} for the best codoped sample was approximately 2 K. {yields} The best codoped sample yielded a J{sub C}, an order of magnitude more than the undoped one at 5 K and 8 T. {yields} The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J{sub C}. -- Abstract: MgB{sub 2} bulk samples added with nano SiO{sub 2} and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg{sub 2}Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO{sub 2}/diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J{sub C}(H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J{sub C}(H) of co-doped samples were significantly higher and the best co-doped sample yielded a J{sub C}, an order of magnitude more than the undoped one at 5 K and 8 T.

The Development of Open Water-lubricated Polycrystalline Diamond (PCD) Thrust Bearings for Use in Marine Hydrokinetic (MHK) Energy Machines

Energy Technology Data Exchange (ETDEWEB)

Cooley, Craig, H.; Khonsari, Michael,, M; Lingwall, Brent

2012-11-28

Polycrstalline diamond (PCD) bearings were designed, fabricated and tested for marine-hydro-kinetic (MHK) application. Bearing efficiency and life were evaluated using the US Synthetic bearing test facility. Three iterations of design, build and test were conducted to arrive at the best bearing design. In addition life testing that simulated the starting and stopping and the loading of real MHK applications were performed. Results showed polycrystalline diamond bearings are well suited for MHK applications and that diamond bearing technology is TRL4 ready. Based on life tests results bearing life is estimated to be at least 11.5 years. A calculation method for evaluating the performance of diamond bearings of round geometry was also investigated and developed. Finally, as part of this effort test bearings were supplied free of charge to the University of Alaska for further evaluation. The University of Alaska test program will subject the diamond bearings to sediment laden lubricating fluid.

Self-limited kinetics of electron doping in correlated oxides

International Nuclear Information System (INIS)

Chen, Jikun; Zhou, You; Jiang, Jun; Shi, Jian; Ramanathan, Shriram; Middey, Srimanta; Chakhalian, Jak; Chen, Nuofu; Chen, Lidong; Shi, Xun; Döbeli, Max

2015-01-01

Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni 3+ are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem

Experimental approach to controllably vary protein oxidation while minimizing electrode adsorption for boron-doped diamond electrochemical surface mapping applications.

Science.gov (United States)

McClintock, Carlee S; Hettich, Robert L

2013-01-02

Oxidative protein surface mapping has become a powerful approach for measuring the solvent accessibility of folded protein structures. A variety of techniques exist for generating the key reagent (i.e., hydroxyl radicals) for these measurements; however, these approaches range significantly in their complexity and expense of operation. This research expands upon earlier work to enhance the controllability of boron-doped diamond (BDD) electrochemistry as an easily accessible tool for producing hydroxyl radicals in order to oxidize a range of intact proteins. Efforts to modulate the oxidation level while minimizing the adsorption of protein to the electrode involved the use of relatively high flow rates to reduce protein residence time inside the electrochemical flow chamber. Additionally, a different cell activation approach using variable voltage to supply a controlled current allowed us to precisely tune the extent of oxidation in a protein-dependent manner. In order to gain perspective on the level of protein adsorption onto the electrode surface, studies were conducted to monitor protein concentration during electrolysis and gauge changes in the electrode surface between cell activation events. This report demonstrates the successful use of BDD electrochemistry for greater precision in generating a target number of oxidation events upon intact proteins.

Heavy metal ion adsorption behavior in nitrogen-doped magnetic carbon nanoparticles: Isotherms and kinetic study

International Nuclear Information System (INIS)

Shin, Keun-Young; Hong, Jin-Yong; Jang, Jyongsik

2011-01-01

Graphical abstract: Display Omitted Research highlights: → The monodisperse and multigram-scale N-MCNPs are fabricated by carbonization of polypyrrole as a carbon precursor. → The synthesized N-MCNPs provide an enhanced adsorption uptake for various heavy metal ions. → The N-MCNPs can be applied to the Langmuir model and pseudo-second-order kinetics. → The iron-impregnated N-MCNPs are reused up to 5 times with no loss of removal efficiency. - Abstract: To clarify the heavy metal adsorption mechanism of nitrogen-doped magnetic carbon nanoparticles (N-MCNPs), adsorption capacity was investigated from the adsorption isotherms, kinetics and thermodynamics points of view. The obtained results showed that the equilibrium adsorption behavior of Cr 3+ ion onto the N-MCNPs can be applied to the Langmuir model and pseudo-second-order kinetics. It indicated that the fabricated N-MCNPs had the homogenous surface for adsorption and all adsorption sites had equal adsorption energies. Furthermore, the adsorption onto N-MCNPs taken place through a chemical process involving the valence forces. According to the thermodynamics, the adsorption process is spontaneous and endothermic in nature which means that the adsorption capacity increases with increasing temperature due to the enhanced mobility of adsorbate molecules. The effects of the solution pH and the species of heavy metal ion on the adsorption uptake were also studied. The synthesized N-MCNPs exhibited an enhanced adsorption capacity for the heavy metal ions due to the high surface area and large amount of nitrogen contents.

A study of defects in diamond

International Nuclear Information System (INIS)

Hunt, D.C.

1999-01-01

irradiation at 100K), in conjunction with previous measurements, shows that it arises from the neutral -split self-interstitial. This is the first observation of a self-interstitial in type IV material. This shows the self-interstitial is not mobile in type IIa diamond under normal conditions (i.e. without the irradiation) until the annealing temperature of 700K. A new EPR defect, created during electron irradiation at 100K, has been investigated and labelled O3. It has a triplet ground state, S=1, and C 2 symmetry - with a rotation axis. Analysis of the 13 C hyperfine couplings by a simple molecular orbital calculation shows that 76% of the unpaired electronic wavefunction is localized in two non-bonding 2p orbitals, on different carbon atoms separated by ∼3.2(5)A. An EPR investigation of defects in a suite of nitrogen-doped CVD diamond films has shown that single substitutional donor nitrogen and the H1 defect, increase linearly with the nitrogen gas content in the feed stock for atomic nitrogen to carbon ratios (N:C) up to 0.4; the region where the growth rate is also increasing. For higher nitrogen:carbon (N:C) ratios the growth rate falls, and the quality of the films deteriorates substantially as the amount of non-diamond carbon in the film increases. (author)

Diamond film growth with modification properties of adhesion between substrate and diamond film

Directory of Open Access Journals (Sweden)

Setasuwon P.

2004-03-01

Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

Raman and EPR spectroscopic studies of chromium-doped diamond-like carbon films

Czech Academy of Sciences Publication Activity Database

Savchenko, Dariia; Vorlíček, Vladimír; Prokhorov, Andriy; Kalabukhova, E.; Lančok, Ján; Jelínek, Miroslav

2018-01-01

Roč. 83, Mar (2018), s. 30-37 ISSN 0925-9635 R&D Projects: GA MŠk(CZ) LO1409; GA MŠk(CZ) LM2015088; GA ČR(CZ) GA15-05864S Institutional support: RVO:68378271 Keywords : EPR * micro-Raman spectroscopy * diamond-like films * carbon-related defects * chromium Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.561, year: 2016

Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

Science.gov (United States)

Gruen, Dieter M [Downers Grove, IL

2009-08-11

One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

Novel phase of carbon, ferromagnetism, and conversion into diamond

International Nuclear Information System (INIS)

Narayan, Jagdish; Bhaumik, Anagh

2015-01-01

We report the discovery of a new phase of carbon (referred to as Q-carbon) and address fundamental issues related to direct conversion of carbon into diamond at ambient temperatures and pressures in air without any need for catalyst and presence of hydrogen. The Q-carbon is formed as result of quenching from super undercooled state by using high-power nanosecond laser pulses. We discuss the equilibrium phase diagram (P vs. T) of carbon and show that by rapid quenching kinetics can shift thermodynamic graphite/diamond/liquid carbon triple point from 5000 K/12 GPa to super undercooled carbon at atmospheric pressure in air. It is shown that nanosecond laser heating of diamond-like amorphous carbon on sapphire, glass, and polymer substrates can be confined to melt carbon in a super undercooled state. By quenching the carbon from the super undercooled state, we have created a new state of carbon (Q-carbon) from which nanodiamond, microdiamond, microneedles, and single-crystal thin films are formed depending upon the nucleation and growth times allowed for diamond formation. The Q-carbon quenched from liquid is a new state of solid carbon with a higher mass density than amorphous carbon and a mixture of mostly fourfold sp 3 (75%–85%) with the rest being threefold sp 2 bonded carbon (with distinct entropy). It is expected to have new and improved mechanical hardness, electrical conductivity, chemical, and physical properties, including room-temperature ferromagnetism (RTFM) and enhanced field emission. Here we present interesting results on RTFM, enhanced electrical conductivity and surface potential of Q-carbon to emphasize its unique properties. The Q-carbon exhibits robust bulk ferromagnetism with estimated Curie temperature of about 500 K and saturation magnetization value of 20 emu g −1 . From the Q-carbon, diamond phase is nucleated and a variety of micro- and nanostructures and large-area single-crystal diamond sheets are grown by allowing growth times

Diamonds for beam instrumentation

International Nuclear Information System (INIS)

Griesmayer, Erich

2013-01-01

Diamond is perhaps the most versatile, efficient and radiation tolerant material available for use in beam detectors with a correspondingly wide range of applications in beam instrumentation. Numerous practical applications have demonstrated and exploited the sensitivity of diamond to charged particles, photons and neutrons. In this paper, a brief description of a generic diamond detector is given and the interaction of the CVD diamond detector material with protons, electrons, photons and neutrons is presented. Latest results of the interaction of sCVD diamond with 14 MeV mono-energetic neutrons are shown.

Kankan diamonds (Guinea) III: δ13C and nitrogen characteristics of deep diamonds

Science.gov (United States)

Stachel, T.; Harris, J. W.; Aulbach, S.; Deines, P.

Diamonds from the Kankan area in Guinea formed over a large depth profile beginning within the cratonic mantle lithosphere and extending through the asthenosphere and transition zone into the lower mantle. The carbon isotopic composition, the concentration of nitrogen impurities and the nitrogen aggregation level of diamonds representing this entire depth range have been determined. Peridotitic and eclogitic diamonds of lithospheric origin from Kankan have carbon isotopic compositions (δ13C: peridotitic -5.4 to -2.2‰ eclogitic -19.7 to -0.7‰) and nitrogen characteristics (N: peridotitic 17-648 atomic ppm; eclogitic 0-1,313 atomic ppm; aggregation from IaA to IaB) which are generally typical for diamonds of these two suites worldwide. Geothermobarometry of peridotitic and eclogitic inclusion parageneses (worldwide sources) indicates that both suites formed under very similar conditions within the cratonic lithosphere, which is not consistent with a derivation of diamonds with light carbon isotopic composition from subducted organic matter within subducting oceanic slabs. Diamonds containing majorite garnet inclusions fall to the isotopically heavy side (δ13C: -3.1‰ to +0.9‰) of the worldwide diamond population. Nitrogen contents are low (0-126 atomic ppm) and one of the two nitrogen-bearing diamonds shows such a low level of nitrogen aggregation (30% B-centre) that it cannot have been exposed to ambient temperatures of the transition zone (>=1,400 °C) for more than 0.2 Ma. This suggests rapid upward transport and formation of some Kankan diamonds pene-contemporaneous to Cretaceous kimberlite activity. Similar to these diamonds from the asthenosphere and the transition zone, lower mantle diamonds show a small shift towards isotopic heavy compositions (-6.6 to -0.5‰, mode at -3.5‰). As already observed for other mines, the nitrogen contents of lower mantle diamonds were below detection (using FTIRS). The mutual shift of sublithospheric diamonds towards

Pulsed laser deposition of metallic films on the surface of diamond particles for diamond saw blades

International Nuclear Information System (INIS)

Jiang Chao; Luo Fei; Long Hua; Hu Shaoliu; Li Bo; Wang Youqing

2005-01-01

Ti or Ni films have been deposited on the diamond particle surfaces by pulsed laser deposition. Compressive resistance of the uncoated and coated diamond particles was measured, respectively, in the experiments. The compressive resistance of the Ti-coated diamonds particles was found much higher than that of the uncoated ones. It increased by 39%. The surface morphology is observed by the metallography microscope. The surface of the uncoated diamonds particles had many hollows and flaws, while the surface of Ni-coated diamond particles was flat and smooth, and the surface of Ti-coated diamond particles had some metal masses that stood out of the surface of the Ti-coated film. The components of the metallic films of diamond particles were examined by X-ray diffractometry (XRD). TiC was found formed on the Ti-coated diamond surface, which resulted in increased surface bonding strength between the diamond particles and the Ti films. Meanwhile, TiC also favored improving the bonding strength between the coated diamond particles and the binding materials. Moreover, the bending resistance of the diamond saw blade made of Ti-coated diamond was drastically higher than that of other diamond saw blades, which also played an important role in improving the blade's cutting ability and lifetime. Therefore, it was most appropriate that the diamond saw blade was made of Ti-coated diamond particles rather than other materials

Thermally stable diamond brazing

Science.gov (United States)

Radtke, Robert P [Kingwood, TX

2009-02-10

A cutting element and a method for forming a cutting element is described and shown. The cutting element includes a substrate, a TSP diamond layer, a metal interlayer between the substrate and the diamond layer, and a braze joint securing the diamond layer to the substrate. The thickness of the metal interlayer is determined according to a formula. The formula takes into account the thickness and modulus of elasticity of the metal interlayer and the thickness of the TSP diamond. This prevents the use of a too thin or too thick metal interlayer. A metal interlayer that is too thin is not capable of absorbing enough energy to prevent the TSP diamond from fracturing. A metal interlayer that is too thick may allow the TSP diamond to fracture by reason of bending stress. A coating may be provided between the TSP diamond layer and the metal interlayer. This coating serves as a thermal barrier and to control residual thermal stress.

Sublimation Properties of Pentaerythritol Tetranitrate Single Crystals Doped with Its Homologs

Energy Technology Data Exchange (ETDEWEB)

Bhattacharia, Sanjoy K.; Maiti, Amitesh; Gee, Richard H.; Weeks, Brandon L.

2012-07-20

Pentaerythritol tetranitrate (PETN) is a secondary explosive used extensively in military and commercial applications. Coarsening of PETN during long-term storage changes the physical properties such as surface area and particle morphology which are important factors in initiation and performance. Doping of impurities was proposed to slow the coarsening process since impurities were shown to modify both the kinetic and thermodynamic properties. In this paper, we discuss how doping of PETN with its homologs of dipentaerythritol hexanitrate (diPEHN) and tripentaerytritol octanitrate (triPEON) affect kinetic and thermodynamic parameters. Pure and homolog doped PETN single crystals were prepared by solvent evaporation in acetone at room temperature. Doping concentrations for this study were 1000 ppm, 5000 ppm, and 10000 ppm. Activation energy and vapor pressure of pure and doped PETN single crystals were obtained from thermogravimetric analysis data.

n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study

Czech Academy of Sciences Publication Activity Database

Vlčková Živcová, Zuzana; Frank, Otakar; Drijkoningen, S.; Haenen, K.; Mortet, Vincent; Kavan, Ladislav

2016-01-01

Roč. 6, č. 56 (2016), s. 51387-51393 ISSN 2046-2069 R&D Projects: GA ČR GA13-31783S Grant - others:AV ČR(CZ) G.0456.1 Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Amorphous films * Cyclic voltammetry * Diamond films Subject RIV: CG - Electrochemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 3.108, year: 2016

Diamond growth on an array of seeds: The revolution of diamond production

Energy Technology Data Exchange (ETDEWEB)

Sung, James C. [KINIK Company, 64, Chung-San Rd., Ying-Kuo, Taipei Hsien 239, Taiwan (China) and National Taiwan University, Taipei 106, Taiwan (China) and National Taipei University of Technology, Taipei 106, Taiwan (China)]. E-mail: sung@kinik.com.tw; Sung, Michael [Massachusetts Institute of Technology, Cambridge, MA (United States); Sung, Emily [Johnson and Johnson, Freemont, CA (United States)

2006-03-01

The consumption of saw diamond grits is a measure of a nation's constructional activities. The per capita consumption for the world is about 0.7 carats in 2004, and in China, about 3 carats. The manufacture of large saw diamond grits requires stringent control of pressure and temperature that only a few companies can master. However, with the implementation of a novel diamond seeding technology, large saw diamond grits of extreme quality can be mass produced. With this breakthrough, the prices of saw grit will plummet in the near future that should benefit the constructional industry worldwide. Moreover, electronic or thermal grade of large diamond crystals may be produced for applications in semiconductor, electronic or optical industry.