Crystal Structure-Ionic Conductivity Relationships in Doped Ceria Systems

DEFF Research Database (Denmark)

Omar, Shobit; Wachsman, Eric D.; Jones, Jacob L.

2009-01-01

lattice strain of 10 mol% trivalent cation-doped ceria systems at the same temperatures. A consistent set of ionic conductivity data is developed, where the samples are synthesized under similar experimental conditions. On comparing the grain ionic conductivity, Nd0.10Ce0.90O2−δ exhibits the highest ionic...... conductivity among other doped ceria systems. The grain ionic conductivity is around 17% higher than that of Gd0.10Ce0.90O2−δ at 500°C, in air. X-ray diffraction profiles are collected on the sintered powder of all the compositions, from room temperature to 600°C, in air. From the lattice expansion data...... at high temperatures, the minimal elastic strain due to the presence of dopant is observed in Dy0.10Ce0.90O2−δ. Nd0.10Ce0.90O2−δ exhibits larger elastic lattice strain than Dy0.10Ce0.90O2−δ with better ionic conductivity at intermediate temperatures. Therefore, it is shown that the previously proposed...

Evaluation of thin film ceria membranes for syngas membrane reactors—Preparation, characterization and testing

DEFF Research Database (Denmark)

Kaiser, Andreas; Foghmoes, Søren Preben Vagn; Chatzichristodoulou, Christodoulos

2011-01-01

Gadolinium doped ceria (Ce0.1Gd0.9O1.95−δ, CGO10) was investigated as oxygen separation membrane material for application in syngas production. Planar, thin film CGO10 membranes were fabricated by tape casting and lamination on porous NiO-YSZ supports and subsequent co-sintering. High oxygen fluxes......-stoichiometry profile in the 30μm thin CGO membrane under operation reveal that due to oxygen permeation in the membrane the largest non-stoichiometry at the permeate (fuel) side is more than a factor of 6 times smaller at 850°C than that expected for CGO10 at equilibrium. The related relative expansion of the thin...... film CGO membrane should therefore lie below the expansion limit of 0.1% expected to be critical for mechanical stability and thereby allows for operation at high temperatures and low oxygen partial pressures....

Imaging space charge regions in Sm-doped ceria using electrochemical strain microscopy

International Nuclear Information System (INIS)

Chen, Qian Nataly; Li, Jiangyu; Adler, Stuart B.

2014-01-01

Nanocrystalline ceria exhibits a total conductivity several orders of magnitude higher than microcrystalline ceria in air at high temperature. The most widely accepted theory for this enhancement (based on fitting of conductivity data to various transport and kinetic models) is that relatively immobile positively charged defects and/or impurities accumulate at the grain boundary core, leading to a counterbalancing increase in the number of mobile electrons (small polarons) within a diffuse space charge region adjacent to each grain boundary. In an effort to validate this model, we have applied electrochemical strain microscopy to image the location and relative population of mobile electrons near grain boundaries in polycrystalline Sm-doped ceria in air at 20–200 °C. Our results show the first direct (spatially resolved) evidence that such a diffuse space charge region does exist in ceria, and is localized to both grain boundaries and the gas-exposed surface

Imaging space charge regions in Sm-doped ceria using electrochemical strain microscopy

Energy Technology Data Exchange (ETDEWEB)

Chen, Qian Nataly; Li, Jiangyu, E-mail: jjli@uw.edu [Department of Mechanical Engineering, University of Washington, Seattle, Washington 98195 (United States); Adler, Stuart B., E-mail: stuadler@uw.edu [Department of Chemical Engineering, University of Washington, Seattle, Washington 98195 (United States)

2014-11-17

Nanocrystalline ceria exhibits a total conductivity several orders of magnitude higher than microcrystalline ceria in air at high temperature. The most widely accepted theory for this enhancement (based on fitting of conductivity data to various transport and kinetic models) is that relatively immobile positively charged defects and/or impurities accumulate at the grain boundary core, leading to a counterbalancing increase in the number of mobile electrons (small polarons) within a diffuse space charge region adjacent to each grain boundary. In an effort to validate this model, we have applied electrochemical strain microscopy to image the location and relative population of mobile electrons near grain boundaries in polycrystalline Sm-doped ceria in air at 20–200 °C. Our results show the first direct (spatially resolved) evidence that such a diffuse space charge region does exist in ceria, and is localized to both grain boundaries and the gas-exposed surface.

Lanthanide-Doped Ceria Nanoparticles as Backside Coaters to Improve Silicon Solar Cell Efficiency.

Science.gov (United States)

Hajjiah, Ali; Samir, Effat; Shehata, Nader; Salah, Mohamed

2018-05-23

This paper introduces lanthanide-doped ceria nanoparticles as silicon solar cell back-side coaters, showing their influence on the solar cell efficiency. Ceria nanoparticles can be synthesized to have formed oxygen vacancies (O-vacancies), which are associated with converting cerium ions from the Ce 4+ state ions to the Ce 3+ ones. These O-vacancies follow the rule of improving silicon solar cell conductivity through a hopping mechanism. Besides, under near-ultra violet (near-UV) excitation, the reduced trivalent cerium Ce 3+ ions are directly responsible for down converting the un-absorbed UV wavelengths to a resultant green photo-luminescence emission at ~520 nm, which is absorbed through the silicon solar cell’s active layer. Adding lanthanide elements such as Neodymium “Nd” as ceria nanoparticle dopants helps in forming extra oxygen vacancies (O-vacancies), followed by an increase in the number of Ce 4+ to Ce 3+ ion reductions, thus enhancing the conductivity and photoluminescence down conversion mechanisms. After introducing lanthanide-doped ceria nanoparticles on a silicon solar cell surface, a promising enhancement in the behavior of the solar cell current-voltage curve is observed, and the efficiency is improved by about 25% of its initial value due to the mutual impact of improving both electric conductivity and optical conversions.

Synthesis and silica coating of calcia-doped ceria/plate-like titanate (K0.8Li0.27Ti1.73O4) nanocomposite by seeded polymerization technique

International Nuclear Information System (INIS)

El-Toni, Ahmed Mohamed; Yin, Shu; Sato, Tsugio

2007-01-01

Calcia-doped ceria is of potential interest as an ultraviolet (UV) radiation blocking material in personal care products because of the excellent UV light absorption property and low catalytic ability for the oxidation of organic materials superior to undoped ceria. In order to reduce the oxidation catalytic activity further, calcia-doped ceria was coated with amorphous silica by means of seeded polymerization technique. Generally, nanoparticles of inorganic materials do not provide a good coverage for human skin because of the agglomeration of the particles. The plate-like particles are required to enhance the coverage ability of inorganic materials. This can be accomplished by synthesis of calcia-doped ceria/plate-like potassium lithium titanate (K 0.8 Li 0.27 Ti 1.73 O 4 ) nanocomposite with subsequent silica coating to control catalytic activity of calcia-doped ceria. Calcia-doped ceria/plate-like potassium lithium titanate nanocomposite was prepared by soft chemical method followed by silica coating via seeded polymerization technique. Silica coated calcia-doped ceria/plate-like potassium lithium titanate nanocomposite was characterized by X-ray diffraction, SEM, TEM, XPS and FT-IR

Effect of doped ceria interlayer on cathode performance of the electrochemical cell using proton conducting oxide

International Nuclear Information System (INIS)

Sakai, Takaaki; Matsushita, Shotaro; Hyodo, Junji; Okuyama, Yuji; Matsuka, Maki; Ishihara, Tatsumi; Matsumoto, Hiroshige

2012-01-01

Highlights: ► Ce 0.8 Yb 0.2 O 2−δ (YbDC) interlayer conducted a large amount of protons. ► YbDC can work as cathode interlayer for proton conducting electrolyte cells. ► Cathode overpotential of the YbDC interlayer cells showed a plateau at about 400 mV. - Abstract: Introduction of doped ceria interlayer to cathode/electrolyte interface of the electrochemical cell with proton conducting electrolyte was investigated using thin Ce 0.8 Yb 0.2 O 2−δ (YbDC) interlayer of about 500 nm thickness. YbDC interlayer conducted a large amount of protons as much as 170 mA cm −2 . It was also found that cathode overpotential of the YbDC interlayer cells consistently showed a plateau at about 400 mV, at which that of the non-interlayer cells did not show, suggesting a possibility that cathode reaction is changed by introducing the doped ceria interlayer. This result also indicates that the interlayer showed high activity for cathode reaction when enough cathodic bias was applied. Especially, the interlayer showed high activity for the improvement of poor cathode reaction between SrZr 0.9 Y 0.1 O 3−α (SZY-91) electrolyte and platinum cathode.

Understanding the ionic conductivity maximum in doped ceria: trapping and blocking.

Science.gov (United States)

Koettgen, Julius; Grieshammer, Steffen; Hein, Philipp; Grope, Benjamin O H; Nakayama, Masanobu; Martin, Manfred

2018-02-26

Materials with high oxygen ion conductivity and low electronic conductivity are required for electrolytes in solid oxide fuel cells (SOFC) and high-temperature electrolysis (SOEC). A potential candidate for the electrolytes, which separate oxidation and reduction processes, is rare-earth doped ceria. The prediction of the ionic conductivity of the electrolytes and a better understanding of the underlying atomistic mechanisms provide an important contribution to the future of sustainable and efficient energy conversion and storage. The central aim of this paper is the detailed investigation of the relationship between defect interactions at the microscopic level and the macroscopic oxygen ion conductivity in the bulk of doped ceria. By combining ab initio density functional theory (DFT) with Kinetic Monte Carlo (KMC) simulations, the oxygen ion conductivity is predicted as a function of the doping concentration. Migration barriers are analyzed for energy contributions, which are caused by the interactions of dopants and vacancies with the migrating oxygen vacancy. We clearly distinguish between energy contributions that are either uniform for forward and backward jumps or favor one migration direction over the reverse direction. If the presence of a dopant changes the migration energy identically for forward and backward jumps, the resulting energy contribution is referred to as blocking. If the change in migration energy due to doping is different for forward and backward jumps of a specific ionic configuration, the resulting energy contributions are referred to as trapping. The influence of both effects on the ionic conductivity is analyzed: blocking determines the dopant fraction where the ionic conductivity exhibits the maximum. Trapping limits the maximum ionic conductivity value. In this way, a deeper understanding of the underlying mechanisms determining the influence of dopants on the ionic conductivity is obtained and the ionic conductivity is predicted

Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element

International Nuclear Information System (INIS)

Shehata, N.; Meehan, K.; Hudait, M.; Jain, N.

2012-01-01

The effect of lanthanides that have positive association energies with oxygen vacancies, such as samarium and neodymium, and the elements with negative association energies, such as holmium and erbium, on ionization state of cerium and, consequentially, the oxygen vacancy concentration in doped ceria nanoparticles are investigated in this article. Structural and optical characterizations of the doped and undoped ceria nanoparticles, synthesized using chemical precipitation, are carried out using transmission electron microscopy, X-ray diffractometry, optical absorption spectroscopy, and fluorescence spectroscopy. It is deduced that the negative association energy dopants decrease the conversion of Ce +4 into Ce +3 and, hence, scavenge the oxygen vacancies, evidenced by the observed increase in the allowed direct bandgap, decrease in the integrated fluorescence intensity, and increased the size of doped nanoparticles. The opposite trends are obtained when the positive association dopants are used. It is concluded that the determining factor as to whether a lanthanide dopant in ceria acts as a generator or scavenger of oxygen vacancies in ceria nanoparticles is the sign of the association energy between the element and the oxygen vacancies. The ability to tailor the ionization state of cerium and the oxygen vacancy concentration in ceria has applications in a broad range of fields, which include catalysis, biomedicine, electronics, and environmental sensing.

Enhanced mass diffusion phenomena in highly defective doped ceria

DEFF Research Database (Denmark)

Esposito, Vincenzo; Ni, De Wei; He, Zeming

2013-01-01

The densification and grain growth of the solid state ionic conductor material Ce0.9Gd0.1O1.95−δ (i.e. GDC10, gadolinium-doped ceria, with Gd 10mol.%) are analysed for nanometric and fine powders of various particle sizes, both in air and in a 9vol.% H2–N2 mixture. Due to a dominant solute drag...

Lattice thermal expansion and solubility limits of neodymium-doped ceria

International Nuclear Information System (INIS)

Zhang, Jinhua; Ke, Changming; Wu, Hongdan; Yu, Jishun; Wang, Jingran

2016-01-01

Nd x Ce 1−x O 2−0.5x (x=0–1.0) powders were prepared by reverse coprecipitation-calcination method and characterized by XRD. The crystal structure of product powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value. An empirical equation simulating the lattice parameter of neodymium doped ceria was established based on the experimental data. The lattice parameters of the fluorite structure solid solutions increased with extensive adoption of Nd 3+ , and the heating temperature going up. The average thermal expansion coefficients of neodymium doped ceria with fluorite structure are higher than 13.5×10 −6 °C −1 from room temperature to 1200 °C. - Graphical abstract: The crystal structure of Nd x Ce 1−x O 2−0.5x (x=0–1.0) powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value.

Parametric study of up-conversion efficiency in Er-doped ceria nanoparticles under 780 nm excitation

International Nuclear Information System (INIS)

Shehata, N.; Kandas, I.; Samir, E.; Meehan, K.; Aldacher, M.

2016-01-01

This paper presents a new parametric study of the optical up-conversion process in ceria nanoparticles doped with erbium (Er-CeO 2 NPs). Under 780 nm excitation, both the possible transitions that occur between Er 3+ ions and up-conversion rate model simulation are presented. Ceria nanoparticles (CeO 2 NPs) doped with erbium are experimentally synthesized using chemical precipitation technique with post-annealing up to 900 °C with different weight ratios of erbium dopant. We found that the synthesized nanoparticles can emit both green and red emissions under 780 nm laser excitation via two-photon absorption mechanism. Then, the quantum efficiencies of both colored emissions are theoretically investigated with different parameters related to the optical conversion process and the studied material. In addition, this work offer suggested ranges for the optimum values of the studied parameters which could improve the quantum yield efficiency. Einstein coefficients for erbium hosted in ceria are discussed in details using Judd–Ofelt analysis. This promising study could be helpful in improving the up-conversion efficiency of Er-ceria nanoparticles for applications such as bio-imaging and optical-based sensors.

Altering properties of cerium oxide thin films by Rh doping

International Nuclear Information System (INIS)

Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

2015-01-01

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

Nanostructured PLD-grown gadolinia doped ceria: Chemical and structural characterization by transmission electron microscopy techniques

DEFF Research Database (Denmark)

Rodrigo, Katarzyna Agnieszka; Wang, Hsiang-Jen; Heiroth, Sebastian

2011-01-01

The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss spec......, indicate apparent variation of the ceria valence state across and along the film. No element segregation to the grain boundaries is detected. These results are discussed in the context of solid oxide fuel cell applications.......The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss...... spectroscopy and energy dispersive X-ray spectroscopy. A dense, columnar and structurally inhomogeneous CGO10 film, i.e. exhibiting grain size refinement across the film thickness, is obtained in the deposition process. The cerium M4,5 edges, used to monitor the local electronic structure of the grains...

Lattice thermal expansion and solubility limits of neodymium-doped ceria

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jinhua, E-mail: jhzhang1212@126.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); State Key laboratory of Geological Process and Mineral Resources, China University of Geosciences, Wuhan 430074 (China); Ke, Changming [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Wu, Hongdan [College of Resources and Enviromental Engineering, Wuhan University of Science and Technology, Wuhan 430081 (China); Yu, Jishun [State Key laboratory of Geological Process and Mineral Resources, China University of Geosciences, Wuhan 430074 (China); Wang, Jingran [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China)

2016-11-15

Nd{sub x}Ce{sub 1−x}O{sub 2−0.5x} (x=0–1.0) powders were prepared by reverse coprecipitation-calcination method and characterized by XRD. The crystal structure of product powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value. An empirical equation simulating the lattice parameter of neodymium doped ceria was established based on the experimental data. The lattice parameters of the fluorite structure solid solutions increased with extensive adoption of Nd{sup 3+}, and the heating temperature going up. The average thermal expansion coefficients of neodymium doped ceria with fluorite structure are higher than 13.5×10{sup −6} °C{sup −1} from room temperature to 1200 °C. - Graphical abstract: The crystal structure of Nd{sub x}Ce{sub 1−x}O{sub 2−0.5x} (x=0–1.0) powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value.

Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

2013-11-01

The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

Sol–gel deposited ceria thin films as gate dielectric for CMOS ...

Indian Academy of Sciences (India)

Sol–gel deposited ceria thin films as gate dielectric for CMOS technology. ANIL G KHAIRNAR ... The semiconductor roadmap following Moore's law is responsible for ..... The financial support from University Grants Commi- ssion (UGC), New ...

Instability of supercritical porosity in highly doped ceria under reduced oxygen partial pressure

DEFF Research Database (Denmark)

Teocoli, Francesca; Ni, De Wei; Esposito, Vincenzo

2015-01-01

The thermomechanical behavior and microstructural evolution of low relative density (∼0.40) gadolinium-doped ceria are characterized under oxidative and reducing conditions at high temperatures. The electronic defects generated in the structure by Ce4+ to Ce3+ reduction play an important role on ...

High temperature fuel cell with ceria-based solid electrolyte

International Nuclear Information System (INIS)

Arai, H.; Eguchi, K.; Yahiro, H.; Baba, Y.

1987-01-01

Cation-doped ceria is investigated as an electrolyte for the solid oxide fuel cell. As for application to the fuel cells, the electrolyte are desired to have high ionic conductivity in deriving a large electrical power. A series of cation-doped ceria has higher ionic conductivity than zirconia-based oxides. In the present study, the basic electrochemical properties of cation-doped ceria were studied in relation to the application of fuel cells. The performance of fuel cell with yttria-doped ceria electrolyte was evaluated. Ceria-based oxides were prepared by calcination of oxide mixtures of the components or calcination of co-precipitated hydroxide mixtures from the metal nitrate solution. The oxide mixtures thus obtained were sintered at 1650 0 C for 15 hr in air into disks. Ionic transference number, t/sub i/, was estimated from emf of oxygen concentration cell. Electrical conductivities were measured by dc-4 probe method by varying the oxygen partial pressure. The fuel cell was operated by oxygen and hydrogen

Superior sinterability of nano-crystalline gadolinium doped ceria powders synthesized by co-precipitation method

International Nuclear Information System (INIS)

Hari Prasad, D.; Kim, H.-R.; Park, J.-S.; Son, J.-W.; Kim, B.-K.; Lee, H.-W.; Lee, J.-H.

2010-01-01

Reduced sintering temperature of doped ceria can greatly simplify the fabrication process of solid oxide fuel cells (SOFCs) by utilizing the co-firing of all cell components with a single step. In the present study, nano-crystalline gadolinium doped ceria (GDC) powders of high sinterability at lower sintering temperature has been synthesized by co-precipitation at room temperature. The successful synthesis of nano-crystalline GDC was confirmed by XRD, TEM and Raman spectroscopy analysis. Dilatometry studies showed that GDC prepared by this method can be fully densified (97% relative density) at a sintering temperature of 950 o C which is fairly lower than ever before. It has also been found that the sintered samples have a higher ionic conductivity of 1.64 x 10 -2 S cm -1 at 600 o C which is suitable for the intermediate temperature SOFC application.

Effects of sintering atmosphere and initial particle size on sintering of gadolinia-doped ceria

International Nuclear Information System (INIS)

Batista, Rafael Morgado

2014-01-01

The effects of the sintering atmosphere and initial particle size on the sintering of ceria containing 10 mol% gadolinia (GdO 1.5 ) were systematically investigated. The main physical parameter was the specific surface area of the initial powders. Nanometric powders with three different specific surface areas were utilized, 210 m 2 /g, 36,2 m 2 /g e 7,4 m 2 /g. The influence on the densification, and micro structural evolution were evaluated. The starting sintering temperature was verified to decrease with increasing on the specific surface area of raw powders. The densification was accelerated for the materials with smaller particle size. Sintering paths for crystallite growth were obtained. Master sintering curves for gadolinium-doped ceria were constructed for all initial powders. A computational program was developed for this purpose. The results for apparent activation energy showed noticeable dependence with specific surface area. In this work, the apparent activation energy for densification increased with the initial particle size of powders. The evolution of the particle size distributions on non isothermal sintering was investigated by WPPM method. It was verified that the grain growth controlling mechanism on gadolinia doped ceria is the pore drag for initial stage and beginning of intermediate stage. The effects of the sintering atmosphere on the stoichiometry deviation of ceria, densification, microstructure evolution, and electrical conductivity were analyzed. Inert, oxidizing, and reducing atmospheres were utilized on this work. Deviations on ceria stoichiometry were verified on the bulk materials. The deviation verified was dependent of the specific surface area and sintering atmosphere. Higher reduction potential atmospheres increase Ce 3+ bulk concentration after sintering. Accelerated grain growth and lower electrical conductivities were verified when reduction reactions are significantly present on sintering. (author)

Preparation of new composite ceramics based on gadolinium-doped ceria and magnesia nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Yao, Jingying; Schelter, Matthias; Zosel, Jens; Oelssner, Wolfram [Kurt-Schwabe-Institut fuer Mess- und Sensortechnik e.V. Meinsberg, Waldheim (Germany); Mertig, Michael [Kurt-Schwabe-Institut fuer Mess- und Sensortechnik e.V. Meinsberg, Waldheim (Germany); Physikalische Chemie, Mess- und Sensortechnik, Technische Universitaet Dresden (Germany)

2017-09-15

To achieve solid electrolyte materials for electrochemical energy storage devices with very high oxygen ion conductivity, composites of gadolinium-doped ceria (GDC) and magnesia (MgO) are developed in this study. Three different preparation methods are used to prepare nanoparticles from these two components. According to the characterization results, the self-propagating high-temperature synthesis is best suited for the preparation of both nanometer-sized GDC powder as solid electrolyte and MgO powder as insulator. The structures of the prepared nanometer-sized powders have been characterized by X-ray diffraction and transmission electron microscopy. They show narrow size distributions in the lower nanometer range. Then, dense composite ceramics are prepared from a MgO-GDC mixture by sintering. The size of the crystallite domains in the sintered ceramic is in the upper nanometer range. TEM and TEM-EDX images of a new composite ceramic based on gadolinium-doped ceria and magnesia nanoparticles. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation of new composite ceramics based on gadolinium-doped ceria and magnesia nanoparticles

International Nuclear Information System (INIS)

Yao, Jingying; Schelter, Matthias; Zosel, Jens; Oelssner, Wolfram; Mertig, Michael

2017-01-01

To achieve solid electrolyte materials for electrochemical energy storage devices with very high oxygen ion conductivity, composites of gadolinium-doped ceria (GDC) and magnesia (MgO) are developed in this study. Three different preparation methods are used to prepare nanoparticles from these two components. According to the characterization results, the self-propagating high-temperature synthesis is best suited for the preparation of both nanometer-sized GDC powder as solid electrolyte and MgO powder as insulator. The structures of the prepared nanometer-sized powders have been characterized by X-ray diffraction and transmission electron microscopy. They show narrow size distributions in the lower nanometer range. Then, dense composite ceramics are prepared from a MgO-GDC mixture by sintering. The size of the crystallite domains in the sintered ceramic is in the upper nanometer range. TEM and TEM-EDX images of a new composite ceramic based on gadolinium-doped ceria and magnesia nanoparticles. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Anode-supported single-chamber SOFCs based on gadolinia doped ceria electrolytes

Directory of Open Access Journals (Sweden)

Morales, M.

2008-12-01

Full Text Available The utilization of anode supported electrolytes is a useful strategy to increase the electrical properties of the solid oxide fuel cells, because it is possible to decrease considerably the thickness of the electrolytes. We have prepared successfully singlechamber fuel cells of gadolinia doped ceria electrolytes Ce_1-xGd_xO_2-y (CGO supported on an anode formed by a cermet of Ni-CGO. Mixtures of precursor powders of NiO and gadolinium doped ceria with different particle sizes and compositions were analyzed to obtain optimal bulk porous anodes to be used as anode supported fuel cells. Doped ceria electrolytes were prepared by sol-gel related techniques. Then, ceria based electrolytes were deposited by dip coating at different thickness (15-30 µm using an ink prepared with nanometric powders of electrolytes dispersed in a commercial liquid polymer. Cathodes of La_1-xSr_xCoO_3-s (LSCO were also prepared by sol-gel related techniques and were deposited by dip coating on the electrolyte thick films. Finally, electrical properties were determined in a single-chamber reactor where propane as fuel was mixed with synthetic air above the higher explosive limit. Stable density currents were obtained in these experimental conditions, but flow rates of the carrier gas and propane partial pressure were determinants for the optimization of the electrical properties of the fuel cells.

La utilización de electrolitos soportados en el ánodo es una estrategia muy útil para mejorar las propiedades eléctricas de las pilas de combustible de óxido sólido, debido a que permiten disminuir considerablemente el espesor de los electrolitos. Para este trabajo, se han preparado exitosamente pilas de combustible de óxido sólido con electrolitos de ceria dopada con Gd, Ce1_-xGd_xO_2-y (CGO soportados sobre un ánodo formado por un cermet de Ni/CGO. Dichas pilas se han

Biogas as a fuel for solid oxide fuel cells and synthesis gas production: effects of ceria-doping and hydrogen sulfide on the performance of nickel-based anode materials.

Science.gov (United States)

Laycock, Christian J; Staniforth, John Z; Ormerod, R Mark

2011-05-28

Numerous investigations have been carried out into the conversion of biogas into synthesis gas (a mixture of H(2) + CO) over Ni/YSZ anode cermet catalysts. Biogas is a variable mixture of gases consisting predominantly of methane and carbon dioxide (usually in a 2 : 1 ratio, but variable with source), with other constituents including sulfur-containing gases such as hydrogen sulfide, which can cause sulfur poisoning of nickel catalysts. The effect of temperature on carbon deposition and sulfur poisoning of 90 : 10 mol% Ni/YSZ under biogas conversion conditions has been investigated by carrying out a series of catalytic reactions of methane-rich (2 : 1) CH(4)/CO(2) mixtures in the absence and presence of H(2)S over the temperature range 750-1000 °C. The effect of ceria-doping on carbon dioxide reforming, carbon deposition and sulfur tolerance has also been investigated by carrying out a similar series of reactions over ceria-doped Ni/YSZ. Ceria was doped at 5 mol% of the nickel content to give an anode catalyst composition of 85.5 : 4.5 : 10 mol% Ni/CeO(2)/YSZ. Reactions were followed using quadrupolar mass spectrometry (QMS) and the amount of carbon deposition was analysed by subjecting the reacted catalyst samples to a post-reaction temperature programmed oxidation (TPO). On undoped Ni/YSZ, carbon deposition occurred predominantly through thermal decomposition of methane. Ceria-doping significantly suppressed methane decomposition and at high temperatures simultaneously promoted the reverse Boudouard reaction, significantly lowering carbon deposition. Sulfur poisoning of Ni/YSZ occurred in two phases, the first of which caused the most activity loss and was accelerated on increasing the reaction temperature, while the second phase had greater stability and became more favourable with increasing reaction temperature. Adding H(2)S significantly inhibited methane decomposition, resulting in much less carbon deposition. Ceria-doping significantly increased the sulfur

Determination of redox-active centers in praseodymium doped ceria by in situ-XANES spectroscopy

DEFF Research Database (Denmark)

Kiebach, Wolff-Ragnar; Chatzichristodoulou, Christodoulos; Werchmeister, Rebecka Maria Larsen

2012-01-01

Praseodymium doped ceria, a material of interest for electrochemical flue gas purification, was investigated with in situ X-ray Absorption Near Edge Structure spectroscopy between room temperature and 500°C in air and diluted nitrogen(II) oxide (NO/Ar) (1% NO in Ar). For temperatures above 400°C...

Spray pyrolysis of doped-ceria barrier layers for solid oxide fuel cells

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Chrzan, Aleksander; Karczewski, Jakub

2017-01-01

Gadolinium doped ceria (Ce0.8Gd0.2O2 − x-CGO) layer fabricated by spray pyrolysis is investigated as the diffusion barrier for solid oxide fuel cell. It is deposited between the La0.6Sr0.4FeO3 − δ cathode and the yttria stabilized zirconia electrolyte to mitigate harmful interdiffusion...

Detonation nanodiamond introduced into samarium doped ceria electrolyte improving performance of solid oxide fuel cell

Science.gov (United States)

Pei, Kai; Li, Hongdong; Zou, Guangtian; Yu, Richeng; Zhao, Haofei; Shen, Xi; Wang, Liying; Song, Yanpeng; Qiu, Dongchao

2017-02-01

A novel electrolyte materials of introducing detonation nanodiamond (DNDs) into samarium doped ceria (SDC) is reported here. 1%wt. DNDs doping SDC (named SDC/ND) can enlarge the electrotyle grain size and change the valence of partial ceria. DNDs provide the widen channel to accelerate the mobility of oxygen ions in electrolyte. Larger grain size means that oxygen ions move easier in electrolyte, it can also reduce the alternating current (AC) impedance spectra of internal grains. The lower valence of partial Ce provides more oxygen vacancies to enhance mobility rate of oxygen ions. Hence all of them enhance the transportation of oxygen ions in SDC/ND electrolyte and the OCV. Ultimately the power density of SOFC can reach 762 mw cm-2 at 800 °C (twice higher than pure SDC, which is 319 mw cm-2 at 800 °C), and it remains high power density in the intermediate temperature (600-800 °C). It is relatively high for the electrolyte supported (300 μm) cells.

Effects of sintering atmosphere and initial particle size on sintering of gadolinia-doped ceria; Efeitos da atmosfera de sinterizacao e do tamanho de particula na sinterizacao da ceria-gadolinia

Energy Technology Data Exchange (ETDEWEB)

Batista, Rafael Morgado

2014-07-01

The effects of the sintering atmosphere and initial particle size on the sintering of ceria containing 10 mol% gadolinia (GdO{sub 1.5}) were systematically investigated. The main physical parameter was the specific surface area of the initial powders. Nanometric powders with three different specific surface areas were utilized, 210 m{sup 2}/g, 36,2 m{sup 2}/g e 7,4 m{sup 2}/g. The influence on the densification, and micro structural evolution were evaluated. The starting sintering temperature was verified to decrease with increasing on the specific surface area of raw powders. The densification was accelerated for the materials with smaller particle size. Sintering paths for crystallite growth were obtained. Master sintering curves for gadolinium-doped ceria were constructed for all initial powders. A computational program was developed for this purpose. The results for apparent activation energy showed noticeable dependence with specific surface area. In this work, the apparent activation energy for densification increased with the initial particle size of powders. The evolution of the particle size distributions on non isothermal sintering was investigated by WPPM method. It was verified that the grain growth controlling mechanism on gadolinia doped ceria is the pore drag for initial stage and beginning of intermediate stage. The effects of the sintering atmosphere on the stoichiometry deviation of ceria, densification, microstructure evolution, and electrical conductivity were analyzed. Inert, oxidizing, and reducing atmospheres were utilized on this work. Deviations on ceria stoichiometry were verified on the bulk materials. The deviation verified was dependent of the specific surface area and sintering atmosphere. Higher reduction potential atmospheres increase Ce{sup 3+} bulk concentration after sintering. Accelerated grain growth and lower electrical conductivities were verified when reduction reactions are significantly present on sintering. (author)

Synthesis and functional properties of nanostructured ceria materials; Synthese und funktionelle Eigenschaften nanostrukturierter Ceroxidmaterialien

Energy Technology Data Exchange (ETDEWEB)

Naumann, Meike

2014-06-02

Nanostructured ceria tubes have been synthesised using electro spun polymer fibers as templating material. These polymer mats are produced by electro spinning starting with a polymer solution. In a next step polymer fibers are decorated with cer containing sol, which is then dried. To receive ceria tubes the polymer is removed on the one hand by thermal decomposition of the polymer or on the other hand by oxygen plasma treatment of ceria/polymer hybrid material. The resulting ceria tubes have a specific surface area of 98 m2 g-1. TEM, XRD, SAED and Raman investigations show a fully nanostructured crystallinity with cubic fluorine type structure. This obtained material shows a photo catalytic activity within decomposition of methylene blue in the Vis part of the electromagnetic spectrum. This photo catalytic activity can be increased using doping ions of transition and rare earth elements that are introduced in the sol-gel synthesis. Also here XRD and TEM investigations show a fully nano crystalline structure of ceria. Raman spectroscopy verifies the doping of ceria by transition and rare earth elements up to 22% of doping. No phase separation can be observed. The photo catalytic activity can be increased using these doped materials. Additionally a catalytic activity of pure ceria and mixed ceria/zirconia materials have been investigated synthesis of dimethylcarboxilate without water addition. Here a direct dependence between turn over and doping cannot be detected. The dependence can be deduced to the synthesis process of the catalyst. Terminal sensoric properties of doped and undoped ceria (n-type semiconductor) are investigated. The prepared materials are used as chemiresistors against oxygen at temperatures of 700 C. These investigations show a reversible increase of the electrical resistance against oxygen.

Degradation of some ceria electrolytes under hydrogen contact nearby anode in solid oxide fuel cells (SOFCs

Directory of Open Access Journals (Sweden)

Malta Luiz Fernando Brum

2004-01-01

Full Text Available This work is concerned with thermodynamic analysis of the stability of some ceria electrolytes under contact with hydrogen gas nearby anode in fuel cells. It was considered the following types of ceria-electrolytes: pure ceria, strontium-doped ceria, calcium-doped ceria and calcium-bismuth-doped ceria. The equilibrium Log (pH2O/pH2 vs. T diagrams were constructed for x = 0.1 and 0.01, where x is the fraction of initial ceria converted to Ce2O3 (proportional to the ratio between activities of Ce3+ and Ce4+ in the ceria electrolyte, which is proportional to the fraction of electronic conduction in the electrolyte at a given temperature. The predictions of the diagrams are as follows: (a Ce1.9Ca0.1Bi0.8O5.1 and Ce0.9Sr0.1O1.9 are less stable than pure ceria for the whole temperature range (from 0 to 1000 °C; (b Ce0.9Ca0.1O1.9 is more stable than pure ceria below about 650 °C for x = 0.1 and below about 400 °C for x = 0.01; (c at each temperature in the considered range the pressure ratio pH2O(g/pH2(g has to be higher than thermodynamically predicted in order to keep CeO2 stable in the electrolyte contacting hydrogen gas. Thermodynamic predictions are entirely capable of explaining experimental data published on the subject (irreversible cell degradation in the case of SrO-doped ceria; weight loss from doped-ceria electrolyte above 700 °C; oxygen gas release during sintering of ceria.

High-temperature conversion of methane on a composite gadolinia-doped ceria-gold electrode

DEFF Research Database (Denmark)

Marina, O.A.; Mogensen, Mogens Bjerg

1999-01-01

Direct electrochemical oxidation of methane was attempted on a gadolinia-doped ceria Ce(0.6)Gd(0.4)O(1.8) (CG4) electrode in a solid oxide fuel cell using a porous gold-CG4 mixture as current collector Gold is relatively inert to methane in contrast to other popular SOFC anode materials such as n......Direct electrochemical oxidation of methane was attempted on a gadolinia-doped ceria Ce(0.6)Gd(0.4)O(1.8) (CG4) electrode in a solid oxide fuel cell using a porous gold-CG4 mixture as current collector Gold is relatively inert to methane in contrast to other popular SOFC anode materials...... such as nickel and platinum. CG4 was found to exhibit a low electrocatalytic activity for methane oxidation as well as no significant reforming activity implying that the addition of an electrocatalyst or cracking catalyst to the CG4 anode is required for SOFC operating on methane. The methane conversion...... observed at the open-circuit potential and low anodic overpotentials seems to be due to thermal methane cracking in the gas phase and on the alumina surfaces in the cell housing. At high anodic overpotentials, at electrode potentials where oxygen evolution was expected to take place, the formation of CO(2...

Influence of the process parameters on the spray pyrolysis technique, on the synthesis of gadolinium doped-ceria thin film

International Nuclear Information System (INIS)

Halmenschlager, C.M.; Neagu, R.; Rose, L.; Malfatti, C.F.; Bergmann, C.P.

2013-01-01

Graphical abstract: Gas-tight CGO made by spray pyrolysis suitable to be used as SOFC electrolyte. Display Omitted Highlights: ► Dense and crystalline CGO films deposited by spray pyrolysis on various substrates. ► Solvent did not have a strong influence on the film microstructure, defect concentration or thickness. ► The substrate did not have a strong influence on the film microstructure, defect concentration or thickness. ► Films with at least 2.5 μm of thickness presented high impermeability. ► The films obtained are suitable to use as a SOFC electrolyte. -- Abstract: This work presents the results of a process of optimization applied to gadolinia-doped ceria (Ce 0.8 Gd 0.2 O 1.9−x , or CGO) thin films, deposited by spray pyrolysis (SP). Spray pyrolysis is a high thermal deposition method that combines material deposition and heat treatment. This combination is advantageous since the post-deposition heat treatment step is not necessary. However, stresses are solidified in the coating during the deposition, which may lead to the initiation of a crack in the coating. The aim of this work was to achieve thin, dense, and continuous CGO coatings, which may be used as gas separation membranes and as a solid state electrochemical interfaces. Dense, flat, low-defect substrates such as silica slides, silicon mono crystal wafers, and porous substrates were used as substrates in this work. Cerium ammonium nitrate and gadolinium acetylacetonate were dissolved in ethanol and butyl carbitol to form a precursor solution that was sprayed on the heated substrates. Process parameters such as solvent composition, deposition rate and different heating regimes were analyzed. The microstructure was analyzed by secondary electron microscopy (SEM) and was found that thin, dense, and defect-free films could be produced on dense and porous substrates. The results obtained show that it is possible to obtain a CGO dense film deposited by spray pyrolysis. X-ray diffraction

Pulsed laser deposition of gadolinia doped ceria layers at moderate temperature – a seeding approach

DEFF Research Database (Denmark)

Rodrigo, Katarzyna Agnieszka; Heiroth, Sebastian; Pryds, Nini

Ceria-based thin films are often applied as key functional components in miniaturized electroceramic devices such as solid oxide fuel cells or gas sensors. Processing routes that prevent thermal degradation and yield access to the optimum microstructures are sought. Multi-step growth, involving...

DFT Calculations using WIEN2K to determine oxygen defect structure of rare earth doped ceria

CERN Document Server

Khalife, Ali Rida

2014-01-01

We perform density functional calculations using the program WIEN2K in order to study oxygen vacancies in rare earth doped ceria. The calculation for all rare earth elements were prepared, however only those foe Cadmium and Europium were performed due to lack of time. Also a short description of my stay at CERN was presented

Structure and chemistry of epitaxial ceria thin films on yttria-stabilized zirconia substrates, studied by high resolution electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Sinclair, Robert, E-mail: bobsinc@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, Sang Chul, E-mail: sclee99@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Shi, Yezhou; Chueh, William C. [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States)

2017-05-15

We have applied aberration-corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS) to study the structure and chemistry of epitaxial ceria thin films, grown by pulsed laser deposition onto (001) yttria-stabilized zirconia (YSZ) substrates. There are few observable defects apart from the expected mismatch interfacial dislocations and so the films would be expected to have good potential for applications. Under high electron beam dose rate (above about 6000 e{sup -}/Å{sup 2}s) domains of an ordered structure appear and these are interpreted as being created by oxygen vacancy ordering. The ordered structure does not appear at lower lose rates (ca. 2600 e{sup -}/Å{sup 2}s) and can be removed by imaging under 1 mbar oxygen gas in an environmental TEM. EELS confirms that there is both oxygen deficiency and the associated increase in Ce{sup 3+} versus Ce{sup 4+} cations in the ordered domains. In situ high resolution TEM recordings show the formation of the ordered domains as well as atomic migration along the ceria thin film (001) surface. - Highlights: • The local structure and chemistry of ceria can be studied by TEM combined with EELS. • At lower electron, there are no observable changes in the ceria thin films. • At higher dose rates, an ordered phase is created due to oxygen vacancy ordering. • In situ HRTEM shows the oxygen vacancy ordering and the movement of surface atoms.

Synthesis and characterization of ZrO2-CuO co-doped ceria nanoparticles via chemical precipitation method.

Science.gov (United States)

Viruthagiri, G; Gopinathan, E; Shanmugam, N; Gobi, R

2014-10-15

In the present study, the fluorite cubic phase of bare and ZrO2-CuO co-doped ceria (CeO2) nanoparticles have been synthesized through a simple chemical precipitation method. X-ray diffraction results revealed that average grain sizes of the samples are within 5-6nm range. The functional groups present in the samples were identified by Fourier Transform Infrared Spectroscopy (FTIR) study. Surface area measurement was carried out for the ceria nanoparticles to characterize the surface properties of the synthesized samples. The direct optical cutoff wavelength from DRS analysis was blue-shifted evidently with respect to the bulk material and indicated quantum-size confinement effect in the nanocrystallites. PL spectra revealed the strong and sharp UV emission at 401nm. The surface morphology and the element constitution of the pure and doped nanoparticles were studied by scanning electron microscope fitted with energy dispersive X-ray spectrometer arrangement. The thermal decomposition course was followed using thermo gravimetric and differential thermal analyses (TG-DTA). Copyright © 2014 Elsevier B.V. All rights reserved.

High Performance Nano-Ceria Electrodes for Solid Oxide Cells

DEFF Research Database (Denmark)

Graves, Christopher R.; Martinez Aguilera, Lev; Sudireddy, Bhaskar Reddy

2016-01-01

forming the active surfaces on a porous backbone with embedded electronic current collector material, yielding one of the highest performances reported for an electrode that operates either on fuel or oxidant. The second is a nano-Ce0.9Gd0.1O2-δ thin film prepared by spin-coating, which provides......In solid oxide electrochemical cells, the conventional Ni-based fuel-electrodes provide high electrocatalytic activity but they are often a major source of long-term performance degradation due to carbon deposition, poisoning of reaction sites, Ni mobility, etc. Doped-ceria is a promising mixed...

Characterization of gadolinia doped ceria prepared with nanostructured powders

International Nuclear Information System (INIS)

Batista, R.M.; Muccillo, E.N.S.

2012-01-01

Gadolinia doped ceria is a potential material for application as solid electrolyte in solid oxide fuel cells that operate at intermediate temperatures. The performance of this kind of device is strongly influenced by the properties of the solid electrolyte, and then, by its microstructure. In this work the microstructure evolution of materials with surface area between 7 and 200 m 2 /g was investigated in detail. Cylindrical pellets were prepared by isostatic compaction and sintered in the 700 deg C to 1400 deg C temperature range. X-ray diffraction experiments were conducted to follow the crystallite growth. The microstructure evolution was accompanied by scanning electron microscopy. The densification was estimated by the geometric parameters of the samples and by dilatometry. The results revealed a fast sintering kinetics for materials with finer particle size, as expected. Different behaviors for crystallite growth were verified. (author)

Synthesis of nanocrystalline ceria thin films by low-temperature thermal decomposition of Ce-propionate

International Nuclear Information System (INIS)

Roura, P.; Farjas, J.; Ricart, S.; Aklalouch, M.; Guzman, R.; Arbiol, J.; Puig, T.; Calleja, A.; Peña-Rodríguez, O.; Garriga, M.; Obradors, X.

2012-01-01

Thin films of Ce-propionate (thickness below 20 nm) have been deposited by spin coating and pyrolysed into ceria at temperatures below 200 °C. After 1 h of thermal treatment, no signature of the vibrational modes of Ce-propionate is detected by infrared spectroscopy, indicating that decomposition has been completed. The resulting ceria films are nanocrystalline as revealed by X-ray diffraction (average grain size of 2–2.5 nm) and confirmed by microscopy. They are transparent in the visible region and show the characteristic band gap absorption below 400 nm. A direct band gap energy of 3.50 ± 0.05 eV has been deduced irrespective of the pyrolysis temperature (160, 180 and 200 °C).

Single-crystal growth of ceria-based materials

International Nuclear Information System (INIS)

Ulbrich, Gregor

2015-01-01

In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

Releasing cation diffusion in self-limited nanocrystalline defective ceria thin films

DEFF Research Database (Denmark)

Esposito, Vincenzo; Ni, D. W.; Gualandris, Fabrizio

2017-01-01

Acceptor-doped nanocrystalline cerium oxide thin films are mechanically constrained nano-domains, with film/substrate interfacial strain and chemical doping deadlock mass diffusion. In contrast, in this paper we show that chemical elements result in highly unstable thin films under chemical...

Structural/surface characterization and catalytic evaluation of rare-earth (Y, Sm and La) doped ceria composite oxides for CH{sub 3}SH catalytic decomposition

Energy Technology Data Exchange (ETDEWEB)

He, Dedong; Chen, Dingkai; Hao, Husheng; Yu, Jie; Liu, Jiangping; Lu, Jichang; Liu, Feng [Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming, 650500 (China); Wan, Gengping [Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming, 650500 (China); Research Center for Analysis and Measurement, Hainan University, Haikou, 570228 (China); He, Sufang [Research Center for Analysis and Measurement, Kunming University of Science and Technology, Kunming, 650093 (China); Luo, Yongming, E-mail: environcatalysis222@yahoo.com [Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming, 650500 (China)

2016-12-30

Highlights: • Ce{sub 0.75}RE{sub 0.25}O{sub 2-δ} (RE = Y, Sm and La) were synthesized by citrate complexation method. • Ce{sub 0.75}Y{sub 0.25}O{sub 2-δ} exhibited the best stability for the decomposition of CH{sub 3}SH. • Cation radius played a key role in determining structure and surface characteristics. • Catalytic behavior depended on synergistic role of oxygen vacancies and basic sites. • Ce{sub 2}S{sub 3} accumulation on the surface was responsible for the deactivation of catalyst. - Abstract: A series of rare earth (Y, Sm and La) doped ceria composite oxides and pure CeO{sub 2} were synthesized and evaluated by conducting CH{sub 3}SH catalytic decomposition test. Several characterization studies, including XRD, BET, Raman, H{sub 2}-TPR, XPS, FT-IR, CO{sub 2}-TPD and CH{sub 3}SH-TPD, were undertaken to correlate structural and surface properties of the obtained ceria-based catalysts with their catalytic performance for CH{sub 3}SH decomposition. More oxygen vacancies and increased basic sites exhibited in the rare earth doped ceria catalysts. Y doped ceria sample (Ce{sub 0.75}Y{sub 0.25}O{sub 2-δ}), with a moderate increase in basic sites, contained more oxygen vacancies. More structural defects and active sites could be provided, and a relatively small amount of sulfur would accumulate, which resulted in better catalytic performance. The developed catalyst presented good catalytic behavior with stability very similar to that of typical zeolite-based catalysts reported previously. However, La doped ceria catalyst (Ce{sub 0.75}La{sub 0.25}O{sub 2-δ}) with the highest alkalinity was not the most active one. More sulfur species would be adsorbed and a large amount of cerium sulfide species (Ce{sub 2}S{sub 3}) would accumulate, which caused deactivation of the catalysts. The combined effect of increased oxygen vacancies and alkalinity led to the catalytic stability of Ce{sub 0.75}Sm{sub 0.25}O{sub 2-δ} sample was comparable to that of pure Ce

Reduction Dynamics of Doped Ceria, Nickel Oxide, and Cermet Composites Probed Using In Situ Raman Spectroscopy.

Science.gov (United States)

Maher, Robert C; Shearing, Paul R; Brightman, Edward; Brett, Dan J L; Brandon, Nigel P; Cohen, Lesley F

2016-01-01

The redox properties of gadolinium doped ceria (CGO) and nickel oxide (NiO) composite cermets underpin the operation of solid oxide electrochemical cells. Although these systems have been widely studied, a full comprehension of the reaction dynamics at the interface of these materials is lacking. Here, in situ Raman spectroscopic monitoring of the redox cycle is used to investigate the interplay between the dynamic and competing processes of hydrogen spillover and water dissociation on the doped ceria surface. In order to elucidate these mechanisms, the redox process in pure CGO and NiO is studied when exposed to wet and dry hydrogen and is compared to the cermet behavior. In dry hydrogen, CGO reduces relatively rapidly via a series of intermediate phases, while NiO reduces via a single-step process. In wet reducing atmospheres, however, the oxidation state of pure CGO is initially stabilized due to the dissociation of water by reduced Ce(III) and subsequent incorporation of oxygen into the structure. In the reduction process involving the composite cermet, the close proximity of the NiO improves the efficiency and speed of the composite reduction process. Although NiO is already incorporated into working cells, these observations suggest direct routes to further improve cell performance.

Thickness effects of yttria-doped ceria interlayers on solid oxide fuel cells

Science.gov (United States)

Fan, Zeng; An, Jihwan; Iancu, Andrei; Prinz, Fritz B.

2012-11-01

Determining the optimal thickness range of the interlayed yttria-doped ceria (YDC) films promises to further enhance the performance of solid oxide fuel cells (SOFCs) at low operating temperatures. The YDC interlayers are fabricated by the atomic layer deposition (ALD) method with one super cycle of the YDC deposition consisting of 6 ceria deposition cycles and one yttria deposition cycle. YDC films of various numbers of ALD super cycles, ranging from 2 to 35, are interlayered into bulk fuel cells with a 200 um thick yttria-stabilized zirconia (YSZ) electrolyte. Measurements and analysis of the linear sweep voltammetry of these fuel cells reveal that the performance of the given cells is maximized at 10 super cycles. Auger elemental mapping and X-ray photoelectron spectroscopy (XPS) techniques are employed to determine the film completeness, and they verify 10 super cycles of YDC to be the critical thickness point. This optimal YDC interlayer condition (6Ce1Y × 10 super cycles) is applied to the case of micro fuel cells as well, and the average performance enhancement factor is 1.4 at operating temperatures of 400 and 450 °C. A power density of 1.04 W cm-2 at 500 °C is also achieved with the optimal YDC recipe.

Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

DEFF Research Database (Denmark)

Reolon, R. P.; Sanna, S.; Xu, Yu

2018-01-01

A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

Synthesis and characterization of (Ba,Yb doped ceria nanopowders

Directory of Open Access Journals (Sweden)

Branko Matović

2011-06-01

Full Text Available Nanometric size (Ba, Yb doped ceria powders with fluorite-type structure were obtained by applying selfpropagating room temperature methods. Tailored composition was: Ce0.95−xBa0.05YbxO2−δ with fixed amount of Ba − 0.05 and varying Yb content “x” from 0.05 to 0.2. Powder properties such as crystallite and particle size and lattice parameters have been studied. Röntgen diffraction analyses (XRD were used to characterize the samples at room temperature. Also, high temperature treatment (up to 1550°C was used to follow stability of solid solutions. The mean diameters of the nanocrystals are determined from the full width at half maxima (FWHM of the XRD peaks. It was found that average diameter of crystallites is less than 3 nm. WilliamsonHall plots were used to separate the effect of the size and strain in the nanocrystals.

Ceria and strontium titanate based electrodes

DEFF Research Database (Denmark)

2010-01-01

A ceramic anode structure obtainable by a process comprising the steps of: (a) providing a slurry by dispersing a powder of an electronically conductive phase and by adding a binder to the dispersion, in which said powder is selected from the group consisting of niobium-doped strontium titanate......, vanadium-doped strontium titanate, tantalum-doped strontium titanate, and mixtures thereof, (b) sintering the slurry of step (a), (c) providing a precursor solution of ceria, said solution containing a solvent and a surfactant, (d) impregnating the resulting sintered structure of step (b...

The effect of CTAB on synthesis in butanol of samaria and gadolinia doped ceria - nickel oxide ceramics

International Nuclear Information System (INIS)

Arakaki, A.R.; Cunha, S.M.; Yoshito, W.K.; Ussui, V.; Lazar, D.R.R.

2011-01-01

In this work it was synthesized doped ceria and Samaria gadolinia - nickel oxide ceramics, mainly applied as anodes Fuel Cells Solid Oxide. Powders of composition Ce 0,8 (SmGd) 0,2 O 1,9 /NiO and mass ratio of 40: 60% were initially synthesized by hydroxides coprecipitation and then treated solvo thermically in butanol. Cerium samarium, gadolinium and nickel chlorides and CTAB with molar ratio metal / CTAB ranging from 1 to 3, were used as raw materials Powders were treated in butanol at 150 deg C for 16h. The powders were analyzed by X-ray diffraction, scanning electron microscopy, specific surface area for adsorption of nitrogen and particle size distribution by laser beam scattering. The ceramics were analyzed by scanning electron microscopy and density measurements by immersion technique in water. The results showed that the powders had the characteristic crystalline structures of ceria and nickel hydroxide, and high specific surface area (80 m 2 / g). The characterizations of ceramics demonstrated high chemical homogeneity and porosity values of 30%. (author)

Equilibrium and transient conductivity for gadolium-doped ceria under large perturbations: II. Modeling

DEFF Research Database (Denmark)

Zhu, Huayang; Ricote, Sandrine; Coors, W. Grover

2014-01-01

the computational implementation of a Nernst–Planck–Poisson (NPP) model to represent and interpret conductivity-relaxation measurements. Defect surface chemistry is represented with both equilibrium and finite-rate kinetic models. The experiments and the models are capable of representing relaxations from strongly......A model-based approach is used to interpret equilibrium and transient conductivity measurements for 10% gadolinium-doped ceria: Ce0.9Gd0.1O1.95 − δ (GDC10). The measurements were carried out by AC impedance spectroscopy on slender extruded GDC10 rods. Although equilibrium conductivity measurements...... provide sufficient information from which to derive material properties, it is found that uniquely establishing properties is difficult. Augmenting equilibrium measurements with conductivity relaxation significantly improves the evaluation of needed physical properties. This paper develops and applies...

Sintering, microstructure and electrical conductivity of gadolinia-doped ceria with SrO, TiO2 and SrTiO3

International Nuclear Information System (INIS)

Dias, Maria Cely Freitas

2013-01-01

Ceria containing trivalent rare-earths is a solid electrolyte with higher ionic conductivity than the standard yttria fully-stabilized zirconia ionic conductor. This property turns these ceria-based ionic conductors promising materials for application in solid oxide fuel cells operating at intermediate temperatures (500-700 deg C). One of the most utilized approaches to optimize the electrical conductivity and other properties of these materials is the introduction of a second additive. In this work, ceria-20 mol% gadolinia with additions of 1, 2.5 and 5 mol% of SrO, TiO 2 and SrTiO 3 as co-additives were prepared by solid state reaction. The main purpose was to investigate the effects of the co-additives on densification, microstructure and electrical conductivity of the solid electrolyte. Sintered pellets were characterized by apparent density, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and electrical conductivity by impedance spectroscopy. The additives were found to exert different influences in all studied properties. The way they influence the solid electrolyte properties depends on the type and content of the additive. SrO addition to doped ceria improves the intergranular conductivity, but decreases the apparent density of the pellets. Increase of densification was obtained with TiO 2 addition. This additive promotes increase of the blocking of charge carriers at the grain boundaries due to solute exsolution and formation of the pyrochlore Gd 2 Ti 2 O 7 phase at grain boundaries for contents in excess of the solubility limit. No influence on densification was found for SrTiO 3 additions. (author)

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

International Nuclear Information System (INIS)

Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

2009-01-01

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

Energy Technology Data Exchange (ETDEWEB)

Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

2009-11-15

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

Combined mode I-mode II fracture of 12-mol%-ceria-doped tetragonal zirconia polycrystalline ceramic

International Nuclear Information System (INIS)

Tikare, V.; Choi, S.R.

1997-01-01

The mode I, mode II, and combined mode I-mode II fracture behavior of ceria-doped tetragonal zirconia polycrystalline (Ce-TZP) ceramic was studied. The single-edge-precracked-beam (SEPB) samples were fractured using the asymmetric four-point-bend geometry. The ratio of mode I to mode II loading was varied by varying the degree of asymmetry in the four-point-bend geometry. The minimum strain energy density theory best described the mixed-mode fracture behavior of Ce-TZP with the mode I fracture toughness, K IC = 8.2 ± 0.6 MPa·m 1/2 , and the mode II fracture toughness, K IIC = 8.6 ± 1.3 MPa·m 1/2

Splitting CO2 with a ceria-based redox cycle in a solar-driven thermogravimetric analyzer.

Science.gov (United States)

Takacs, M; Ackermann, S; Bonk, A; Neises-von Puttkamer, M; Haueter, Ph; Scheffe, J R; Vogt, U F; Steinfeld, A

2017-04-01

Thermochemical splitting of CO 2 via a ceria-based redox cycle was performed in a solar-driven thermogravimetric analyzer. Overall reaction rates, including heat and mass transport, were determined under concentrated irradiation mimicking realistic operation of solar reactors. Reticulated porous ceramic (RPC) structures and fibers made of undoped and Zr 4+ -doped CeO 2 , were endothermally reduced under radiative fluxes of 1280 suns in the temperature range 1200-1950 K and subsequently re-oxidized with CO 2 at 950-1400 K. Rapid and uniform heating was observed for 8 ppi ceria RPC with mm-sized porosity due to its low optical thickness and volumetric radiative absorption, while ceria fibers with μm-sized porosity performed poorly due to its opacity to incident irradiation. The 10 ppi RPC exhibited higher fuel yield because of its higher sample density. Zr 4+ -doped ceria showed increasing reduction extents with dopant concentration but decreasing specific CO yield due to unfavorable oxidation thermodynamics and slower kinetics. © 2016 American Institute of Chemical Engineers , 63: 1263-1271, 2017.

A palladium-doped ceria@carbon core-sheath nanowire network: a promising catalyst support for alcohol electrooxidation reactions

Science.gov (United States)

Tan, Qiang; Du, Chunyu; Sun, Yongrong; Du, Lei; Yin, Geping; Gao, Yunzhi

2015-08-01

A novel palladium-doped ceria and carbon core-sheath nanowire network (Pd-CeO2@C CSNWN) is synthesized by a template-free and surfactant-free solvothermal process, followed by high temperature carbonization. This hierarchical network serves as a new class of catalyst support to enhance the activity and durability of noble metal catalysts for alcohol oxidation reactions. Its supported Pd nanoparticles, Pd/(Pd-CeO2@C CSNWN), exhibit >9 fold increase in activity toward the ethanol oxidation over the state-of-the-art Pd/C catalyst, which is the highest among the reported Pd systems. Moreover, stability tests show a virtually unchanged activity after 1000 cycles. The high activity is mainly attributed to the superior oxygen-species releasing capability of Pd-doped CeO2 nanowires by accelerating the removal of the poisoning intermediate. The unique interconnected one-dimensional core-sheath structure is revealed to facilitate immobilization of the metal catalysts, leading to the improved durability. This core-sheath nanowire network opens up a new strategy for catalyst performance optimization for next-generation fuel cells.A novel palladium-doped ceria and carbon core-sheath nanowire network (Pd-CeO2@C CSNWN) is synthesized by a template-free and surfactant-free solvothermal process, followed by high temperature carbonization. This hierarchical network serves as a new class of catalyst support to enhance the activity and durability of noble metal catalysts for alcohol oxidation reactions. Its supported Pd nanoparticles, Pd/(Pd-CeO2@C CSNWN), exhibit >9 fold increase in activity toward the ethanol oxidation over the state-of-the-art Pd/C catalyst, which is the highest among the reported Pd systems. Moreover, stability tests show a virtually unchanged activity after 1000 cycles. The high activity is mainly attributed to the superior oxygen-species releasing capability of Pd-doped CeO2 nanowires by accelerating the removal of the poisoning intermediate. The unique

Gadolinium-doped ceria nanopowders synthesized by urea-based homogeneous co-precipitation (UBHP)

Energy Technology Data Exchange (ETDEWEB)

Accardo, G., E-mail: d16605@kist.re.kr [Fuel Cell Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Spiridigliozzi, L. [Department of Civil and Mechanical Engineering, INSTM Research Unit, University of Cassino and Southern Lazio, Via G. Di Biasio 43, 03043 Cassino, FR (Italy); Cioffi, R.; Ferone, C. [Department of Engineering, INSTM Research Unit, University Parthenope of Naples, Centro Direzionale, Is. C4, 80143 Napoli (Italy); Di Bartolomeo, E. [Department of Chemical Science and Technology, University of Rome “Tor Vergata”, Viale della Ricerca Scientifica, 00133 Rome (Italy); Yoon, Sung Pil [Fuel Cell Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Dell’Agli, G. [Department of Civil and Mechanical Engineering, INSTM Research Unit, University of Cassino and Southern Lazio, Via G. Di Biasio 43, 03043 Cassino, FR (Italy)

2017-02-01

Gadolinium (10%)-doped ceria was successfully synthesized by using an urea-based co-precipitation method (UBHP). A single fluorite phase was obtained after a low temperature (400 °C) calcination treatment. The resulting powders showed grains of nanometric size with some agglomerations and an overall good sinterability. Pellets were sintered at 1300 and 1500 °C for 3 h. The ionic conductivity was measured by electrochemical impedance spectroscopy measurements and a correlation between electrical properties and microstructure was revealed. The promising conductivity values showed that the synthesized powders are suitable for intermediate temperature solid oxide fuel cells (IT-SOFCs) applications. - Highlights: • Urea-based homogeneous co-precipitation is applied to synthesize nanocrystalline GDC. • Dense GDC samples at different sintering temperatures were characterized. • SEM and TEM revealed a well define microstructure and controlled composition. • Correlation between electrochemical properties by EIS and microstructure was discussed. • UBHP method can be used to prepare high performance GDC electrolytes.

Growth and characterization of ceria thin films and Ce-doped {gamma}-Al{sub 2}O{sub 3} nanowires using sol-gel techniques

Energy Technology Data Exchange (ETDEWEB)

Gravani, S; Polychronopoulou, K; Doumanidis, C C; Rebholz, C [Mechanical and Manufacturing Engineering Department, Engineering School, University of Cyprus, 1678, Nicosia (Cyprus); Stolojan, V; Hinder, S J; Baker, M A [Faculty of Engineering and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Cui, Q; Gu, Z [Department of Chemical Engineering and CHN/NCOE Nanomanufacturing Center, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Gibson, P N, E-mail: M.Baker@surrey.ac.uk [Institute for Health and Consumer Protection, Joint Research Centre of the European Commission, 21027 Ispra (Italy)

2010-11-19

{gamma}-Al{sub 2}O{sub 3} is a well known catalyst support. The addition of Ce to {gamma}-Al{sub 2}O{sub 3} is known to beneficially retard the phase transformation of {gamma}-Al{sub 2}O{sub 3} to {alpha}-Al{sub 2}O{sub 3} and stabilize the {gamma}-pore structure. In this work, Ce-doped {gamma}-Al{sub 2}O{sub 3} nanowires have been prepared by a novel method employing an anodic aluminium oxide (AAO) template in a 0.01 M cerium nitrate solution, assisted by urea hydrolysis. Calcination at 500 deg. C for 6 h resulted in the crystallization of the Ce-doped AlOOH gel to form Ce-doped {gamma}-Al{sub 2}O{sub 3} nanowires. Ce{sup 3+} ions within the nanowires were present at a concentration of < 1 at.%. On the template surface, a nanocrystalline CeO{sub 2} thin film was deposited with a cubic fluorite structure and a crystallite size of 6-7 nm. Characterization of the nanowires and thin films was performed using scanning electron microscopy, transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy and x-ray diffraction. The nanowire formation mechanism and urea hydrolysis kinetics are discussed in terms of the pH evolution during the reaction. The Ce-doped {gamma}-Al{sub 2}O{sub 3} nanowires are likely to find useful applications in catalysis and this novel method can be exploited further for doping alumina nanowires with other rare earth elements.

Characterization of ceria-based SOFCs

Energy Technology Data Exchange (ETDEWEB)

Doshi, R.; Routbort, J.; Krumpelt, M. [Argonne National Lab., IL (United States)

1996-12-31

Solid Oxide Fuel Cells (SOFCs) operating at low temperatures (500-700{degrees}C) offer many advantages over the conventional zirconia-based fuel cells operating at higher temperatures. Reduced operating temperatures result in: (1) Application of metallic interconnects with reduced oxidation problems (2) Reduced time for start-up and lower energy consumption to reach operating temperatures (3) Increased thermal cycle ability for the cell structure due to lower thermal stresses of expansion mismatches. While this type of fuel cell may be applied to stationary applications, mobile applications require the ability for rapid start-up and frequent thermal cycling. Ceria-based fuel cells are currently being developed in the U.K. at Imperial College, Netherlands at ECN, and U.S.A. at Ceramatec. The cells in each case are made from a doped ceria electrolyte and a La{sub 1-x}Sr{sub x}Co{sub 1-y}Fe{sub y}O{sub 3} cathode.

Effect of Ca and Li additions on densification and electrical conductivity of 10 mol% gadolinia-doped ceria prepared by the coprecipitation technique; Efeito de adicoes de litio e calcio na densificacao e na condutividade eletrica da ceria-10% mol gadolinia preparada pela tecnica de co-precipitacao

Energy Technology Data Exchange (ETDEWEB)

Porfirio, T.C.

2010-07-01

Ceria containing rare-earth ceramics are potential candidates for application in intermediate-temperature solid oxide fuel cells. One of the main problems related to these ceramic materials is their relatively low sinterability. In this work, the effects of Ca and Li additions on densification and electrical conductivity of 10 mol% gadolinia-doped ceria was investigated. Ceramic compositions containing 1.5 mol% Ca or Li were prepared by the oxalate coprecipitation technique. Results of sintered density and electrical conductivity were compared to those of ceramic samples obtained by solid state reactions showing the effects of the synthesis method on densification and total electrical conductivity of the sintered materials. (author)

Influence of zirconium doping in ceria lattice as an active electrode in amperometric electrochemical ammonia gas sensor using oxygen pumping current

International Nuclear Information System (INIS)

Sharan, R.; Dutta, Atanu; Roy, Mainak

2016-01-01

An amperometric electrochemical sensor using Ce-Zr system as ammonia gas detecting electrode is reported. Using lanthanum gallate based electrolyte La_0_._8Sr_0_._2Ga_0_._8Mg_0_._1Ni_0_._1O_3 (LSGMN) and lanthanum strontium cobaltite La_0_._5Sr_0_._5CoO_3 (LSC) as oxygen reduction electrode, the sensor was found to be highly sensitive to NH_3 gas down to few ppm level, when operated in the temperature range 300-450°C. Keeping LSC electrodecomposition same, when sensing properties were studied with the variation of Zr concentration in ceria for active electrode, sensor with 30 mol % Zr doped ceria showed highest sensitivity of 28μA/ decade at 400°C. For all active electrodecompositions Ce_1_-_xZr_xO_2 (x = 0 to 0.7) highest sensitivity was observed at 400°C. All the sensors performed reproducibly with time response and recovery time 40 and 120 seconds respectively. (author)

Synthesis and characterization of gadolinia-doped ceria-silver cermet cathode material for solid oxide fuel cells

International Nuclear Information System (INIS)

Datta, Pradyot; Majewski, Peter; Aldinger, Fritz

2008-01-01

A series of Ce 0.9 Gd 0.1 O 2-δ -Ag cermets with different Ag contents were prepared by conventional sintering process aiming at assessing the suitability of using them as cathode material for solid oxide fuel cell (SOFC) with Gadolinia-doped ceria electrolyte. The chemical compatibility between Ce 0.9 Gd 0.1 O 2-δ (CGO) and Ag was investigated by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. Thermal expansion coefficients of the cermets were measured as a function of Ag content and were found to increase with metallic content. Although oxygen adsorption at the surface of the cermets could be detected, no reaction or solid solubility between CGO and Ag was found

Single-crystal growth of ceria-based materials; Einkristallzuechtung von Materialien auf der Basis von Cerdioxid

Energy Technology Data Exchange (ETDEWEB)

Ulbrich, Gregor

2015-07-23

In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

Effect of sintering temperature on structural and electrical properties of gadolinium doped ceria (Ce_0.9Gd_0.1O_1.95)

DEFF Research Database (Denmark)

Jadhav, L. D.; Pawar, S. H.; Chourashiya, M. G.

2007-01-01

Gadolinium doped ceria oxide is one of the promising materials as an electrolyte for IT-SOFCs. Ce0.9Gd0.1O1.95 (GDC10) powder was prepared by solid state reaction and sintered at 1473 K, 1573 K, 1673 K and 1773 K All samples were studied using X-ray diffraction, scanning electron micrograph and d...

Effects of metals doping on the removal of Hg and H{sub 2}S over ceria

Energy Technology Data Exchange (ETDEWEB)

Ling, Lixia, E-mail: linglixia@tyut.edu.cn [College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi (China); Zhao, Zhongbei; Zhao, Senpeng [College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi (China); Wang, Qiang [State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, Shanxi (China); Wang, Baojun, E-mail: wangbaojun@tyut.edu.cn [Key Laboratory of Coal Science and Technology (Taiyuan University of Technology), Ministry of Education and Shanxi Province, Taiyuan 030024, Shanxi (China); Zhang, Riguang [Key Laboratory of Coal Science and Technology (Taiyuan University of Technology), Ministry of Education and Shanxi Province, Taiyuan 030024, Shanxi (China); Li, Debao [State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, Shanxi (China)

2017-05-01

Highlights: • Mn and Fe doped CeO{sub 2}(111) surfaces favor Hg capture via strong interaction. • HgS adsorbs on Mn and Fe/CeO{sub 2}(111) surfaces with molecule mode. • Hg is easily oxidized by the active S on Mn and Fe/CeO{sub 2}(111) surfaces. • Mn and Fe doped ceria have the potential to simultaneous remove Hg and H{sub 2}S. - Abstract: The effects of Mn and Fe doping into the CeO{sub 2}(111) surface on the simultaneous removal of Hg and H{sub 2}S was investigated, a density functional theory calculation with the on-site Coulomb interaction taken into account was adopted. The adsorptions of Hg-containing species on perfect CeO{sub 2}(111), Mn/CeO{sub 2}(111) and Fe/CeO{sub 2}(111) surfaces were studied, the results showed that Mn and Fe dopants facilitated Hg adsorption, and more charge transferred from Hg atom to the metal doped surfaces; HgS preferred to adsorb on the perfect surface with the dissociated mode, while with the molecular mode on Mn/CeO{sub 2}(111) and Fe/CeO{sub 2}(111) surfaces. The reaction mechanism show that the dissociated S by H{sub 2}S can easily react with Hg leading to the formation of HgS on Mn/CeO{sub 2}(111) and Fe/CeO{sub 2}(111) surfaces, which is crucial to capture mercury.

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Photoluminescent properties of spider silk coated with Eu-doped nanoceria

Energy Technology Data Exchange (ETDEWEB)

Dmitrović, Svetlana, E-mail: svetlana8@vin.bg.ac.rs [University of Belgrade, Vinča Institute of Nuclear Sciences (Serbia); Nikolić, Marko G.; Jelenković, Branislav [University of Belgrade, Institute of Physics (Serbia); Prekajski, Marija [University of Belgrade, Vinča Institute of Nuclear Sciences (Serbia); Rabasović, Mihailo [University of Belgrade, Institute of Physics (Serbia); Zarubica, Aleksandra [University of Niš, Department of Chemistry, Faculty of Science and Mathematics (Serbia); Branković, Goran [University of Belgrade, Institute for Multidisciplinary Research, Department of Material Science (Serbia); Matović, Branko [University of Belgrade, Vinča Institute of Nuclear Sciences (Serbia)

2017-02-15

Spider dragline silk was coated with pure as well as Eu-doped ceria nanopowders at the room temperature. The treatment was done by immersion of the spider silk mesh into aqueous solutions of cerium nitrate (Ce(NO{sub 3}){sub 3}) and ammonium hydroxide (NH{sub 4}OH). Depending on the relationship between Ce{sup 3+} ion and ammonium hydroxide concentration, coated fibers exhibited a different thickness. Obtained materials were studied by means of FESEM. It was found that ceria nanoparticles of average size of 3 nm were coated along spider thread. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) confirmed crystal nature of nanoparticle coating of spider silk. By using Williamson-Hall plots, crystallite size and strain were estimated. EDS measurement confirmed the presence of Eu in spider-Eu-doped ceria composite, and according to FTIR analysis, the interaction between CeO2 and spider silk was proposed. The morphology of obtained composite was observed by TEM. The photoluminescence emission spectra of spider silk coated with Eu-doped ceria were measured with two different excitations of 385 and 466 nm. The two-photon excited auto-fluorescence of spider silk coated with Eu-doped ceria was detected using a nonlinear laser scanning microscope. Obtained composite has a potential as a fluorescent labeling material in diverse applications.

Photoluminescent properties of spider silk coated with Eu-doped nanoceria

International Nuclear Information System (INIS)

Dmitrović, Svetlana; Nikolić, Marko G.; Jelenković, Branislav; Prekajski, Marija; Rabasović, Mihailo; Zarubica, Aleksandra; Branković, Goran; Matović, Branko

2017-01-01

Spider dragline silk was coated with pure as well as Eu-doped ceria nanopowders at the room temperature. The treatment was done by immersion of the spider silk mesh into aqueous solutions of cerium nitrate (Ce(NO_3)_3) and ammonium hydroxide (NH_4OH). Depending on the relationship between Ce"3"+ ion and ammonium hydroxide concentration, coated fibers exhibited a different thickness. Obtained materials were studied by means of FESEM. It was found that ceria nanoparticles of average size of 3 nm were coated along spider thread. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) confirmed crystal nature of nanoparticle coating of spider silk. By using Williamson-Hall plots, crystallite size and strain were estimated. EDS measurement confirmed the presence of Eu in spider-Eu-doped ceria composite, and according to FTIR analysis, the interaction between CeO2 and spider silk was proposed. The morphology of obtained composite was observed by TEM. The photoluminescence emission spectra of spider silk coated with Eu-doped ceria were measured with two different excitations of 385 and 466 nm. The two-photon excited auto-fluorescence of spider silk coated with Eu-doped ceria was detected using a nonlinear laser scanning microscope. Obtained composite has a potential as a fluorescent labeling material in diverse applications.

Lattice parameters and electrical resistivity of Ceria-Yttria solid solutions

International Nuclear Information System (INIS)

Rey, Jose Fernando Queiruga

2002-01-01

Ce0 2 :u mol% Y 2 O 3 (u=0, 4, 6, 8, 10 and 12) solid solutions were prepared by the conventional powder mixture technique. The main purposes of this work are: the study of the dependence of the lattice parameter of the Ceria cubic phase on the Yttria content, comparing the experimental data with data calculated according to the existing theoretical models; to determine the dependence of the ionic conductivity on the Yttria content; and to study the stability of the cubic fluorite phase after extensive thermal treatments (aging) of the Ceria-Yttria specimens. The results show that the lattice parameter of the solid solutions follows the Vegard's law and can be described by the two reported theoretical models. The 8 mol% Yttria-doped Ceria was found to present the largest value of ionic conductivity. Preliminary results show that a large decrease is found for only 1 h aging at 700 deg C and that the ionic conductivity decreases for ceramic specimens aged for times up to 10 h. (author)

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Effect of chemical redox on Gd-doped ceria mass diffusion

DEFF Research Database (Denmark)

Ni, De Wei; de Florio, D.Z.; Marani, Debora

2015-01-01

The valence and size of cations influence mass diffusion and oxygen defects in ceria. Here we show that reduction of Ce4+ to Ce3+, at high temperatures and low oxygen activity, activates fast diffusion mechanisms which depend on the aliovalent cation concentration. As a result, polycrystalline so...... solid solutions with enhanced electrochemical properties are formed....

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Science.gov (United States)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Improvement of physical properties of ZnO thin films by tellurium doping

Energy Technology Data Exchange (ETDEWEB)

Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

2014-11-01

Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

Characterization of gadolinia-doped ceria with manganese addition synthesized by the cation complexation technique; Caracterizacao de ceria-gadolinia e ceria-gadolinia-manganes sintetizados pelo metodo de complexacao de cations

Energy Technology Data Exchange (ETDEWEB)

Yang, J.D.; Muccillo, R.; Muccillo, E.N.S., E-mail: enavarro@usp.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Rocha, R.A. [Universidade Federal do ABC (CEMCSA/UFABC), Santo Andre, SP (Brazil). Centro de Engenharia, Modelagem e Ciencias Sociais Aplicadas

2010-07-01

Ceria-based compounds may be used for several technological applications like catalysts, grinding media and materials for electrolyte and electrodes in solid oxide fuel cells. For most of these applications fine powders are required. In this work, nanostructured ceria powders containing 20 mol % gadolinia with and without manganese addition were synthesized by the cation complexation technique. The prepared powders were calcined at 600 deg C for thermal decomposition of the metal citrate precursors. Results of X-ray diffraction, scanning electron microscopy and specific surface area evidenced the role of manganese on physical characteristics of the nanostructured materials. The cation complexation technique revealed to be a promising method for obtaining nanostructured powders with high yield and suitable physical properties for several technological applications. (author)

synthesis and optical characterization of acid-doped polyaniline thin

African Journals Online (AJOL)

HOD

SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

Ab initio calculation of the migration free energy of oxygen diffusion in pure and samarium-doped ceria

Science.gov (United States)

Koettgen, Julius; Schmidt, Peter C.; Bučko, Tomáš; Martin, Manfred

2018-01-01

We have studied the free energy migration barriers Δ F‡ for oxygen diffusion in pure ceria and Sm-doped ceria for the temperatures 300, 700, and 1000 K. We used the density functional theory in the generalized gradient approximation and an additional Hubbard U parameter for the Ce 4 f electronic states. We compare the results for the free energy deduced from three different methods. First, a static harmonic approach is applied in which the temperature dependent vibrational contributions to energy and entropy are deduced from the phonon frequencies of supercells with a fixed volume. Second, a static quasiharmonic approach is used in which a part of the anharmonicity effect is introduced via an implicit dependence of the harmonic frequencies on the thermally expanding cell volume. Third, the free energy barriers are calculated using metadynamics and molecular dynamics in which anharmonicity effects are naturally taken into account. The three methods examined in this study lead to distinctly different results. According to the harmonic approximation, the migration free energy difference Δ F‡ increases with increasing temperature due to an increasing entropic contribution. According to the quasiharmonic approximation, the migration free energy is independent of temperature. Finally, molecular dynamics predicts a thermally induced increase in the migration free energy. We conclude that temperature dependent experimental lattice constants cancel out the increasing entropic contribution with increasing temperature in the static quasiharmonic approach. The full consideration of anharmonicity effects in the metadynamics method again leads to a temperature dependent migration free energy.

Electrical and stability performance of anode-supported solid oxide fuel cells with strontium- and magnesium-doped lanthanum gallate thin electrolyte

International Nuclear Information System (INIS)

Guo Weimin; Liu Jiang; Zhang Yaohui

2008-01-01

Anode-supported solid oxide fuel cells (SOFCs) comprising NiO-samarium-doped ceria (SDC) (Sm 0.2 Ce 0.8 O 1.9 ) composite anode, thin tri-layer electrolyte, and La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3 (LSCF)-La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3-δ (LSGM) composite cathode were fabricated. The thin tri-layer consisting of an 11-μm thick LSGM electrolyte layer and a 12-μm thick La 0.4 Ce 0.6 O 1.8 (LDC) layer on each side of the LSGM was prepared by centrifugal casting and co-firing technique. The performance of the cells operated with humidified H 2 as fuel and ambient air as oxidant showed a maximum power density of 1.23 W cm -2 at 800 deg. C. A stability test of about 100 h was carried out and some deterioration of output power was observed, while the open circuit voltage (OCV) kept unchanged. Impedance measurements showed that both the electrolyte ohmic resistance and the electrode polarization increased with time and the latter dominated the degradation

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose; Ahn, Sung-Jin; Crumlin, Ethan; Orikasa, Yuki; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

2010-01-01

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose

2010-06-22

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Sintering, microstructure and electrical conductivity of gadolinia-doped ceria with SrO, TiO{sub 2} and SrTiO{sub 3}; Sinterizacao, microestrutura e condutividade eletrica da ceria-gadolinia com adicoes de SrO, TiO{sub 2} e SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Dias, Maria Cely Freitas

2013-07-01

Ceria containing trivalent rare-earths is a solid electrolyte with higher ionic conductivity than the standard yttria fully-stabilized zirconia ionic conductor. This property turns these ceria-based ionic conductors promising materials for application in solid oxide fuel cells operating at intermediate temperatures (500-700 deg C). One of the most utilized approaches to optimize the electrical conductivity and other properties of these materials is the introduction of a second additive. In this work, ceria-20 mol% gadolinia with additions of 1, 2.5 and 5 mol% of SrO, TiO{sub 2} and SrTiO{sub 3} as co-additives were prepared by solid state reaction. The main purpose was to investigate the effects of the co-additives on densification, microstructure and electrical conductivity of the solid electrolyte. Sintered pellets were characterized by apparent density, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and electrical conductivity by impedance spectroscopy. The additives were found to exert different influences in all studied properties. The way they influence the solid electrolyte properties depends on the type and content of the additive. SrO addition to doped ceria improves the intergranular conductivity, but decreases the apparent density of the pellets. Increase of densification was obtained with TiO{sub 2} addition. This additive promotes increase of the blocking of charge carriers at the grain boundaries due to solute exsolution and formation of the pyrochlore Gd{sub 2}Ti{sub 2}O{sub 7} phase at grain boundaries for contents in excess of the solubility limit. No influence on densification was found for SrTiO{sub 3} additions. (author)

Raman study of Ba-doped ceria nanopowders

Directory of Open Access Journals (Sweden)

Radović M.

2007-01-01

Full Text Available A series of Ce1-xBaxO2-y (5£x£0.20 nanometric powders were synthesized by selfpropagating room temperature synthesis. XRD and Raman scattering measurements were used to characterize the samples at room temperature. All the samples are solid solutions with fluorite type structure with an average crystallite size about 5 nm. The redshift and asymmetric broadening of the Raman F2g mode can be well explained with combined confinement and strain effects because of the nanocrystalline powders nature. The appearance of the additional peaks at ~ 560 cm-1 and ~ 600 cm-1, are attributed to extrinsic and intrinsic O2- vacancies in ceria lattice. Raman spectra of temperature treated Ce0.80Ba0.20O2-d sample revealed the instability of this system.

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Fiscal 2000 project of inviting proposals for international joint research - invitation for international proposal (Power generation No.2). Achievement report on development of high-efficiency low-temperature power generation device using SOFC containing yttria-doped ceria layer; 2000 nendo kokusai kyodo kenkyu teian kobo jigyo - kokusai teian kobo (hatsuden No.2). Yttria gan'yu ceria so wo yusuru SOFC kokoritsu teion sadogata hatsuden sochi no kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Efforts continue to develop a solid oxide fuel cell (SOFC) capable of consuming methane, propane, and the like, as fuel directly and of operation at 650 degrees C or lower. The efforts in concrete terms involve the development of an anode material, an electrolyte, and a cathode material not to suffer carbon precipitation and the evaluation of power generation performance of a hydrocarbon fueled single cell. Activities are conducted in the five domains of (1) the fabrication of an SOFC single cell and a preliminary study, (2) evaluation of solid electrolyte thermal stability using X-ray diffraction, (3) anodic carbon precipitation test and single cell performance test, (4) survey of technical trends overseas, and (5) the goal and self-management. In domain (1), technologies are developed to form thin film anodes of Ni-GDC (gadolinium-doped ceria), Cu-GDC, Ni-YSZ (yttria-stabilized zirconia), and the like, for which the ultrasonic spray method and slurry coat method are used. In the study of cell manufacturing, the anode support method and cathode support method are investigated. The anode support method is used to fabricate a thin film, a thin YSZ film is successfully fabricated for typical Ni-YSZ. (NEDO)

Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

International Nuclear Information System (INIS)

Xu, Linhua; Zheng, Gaige; Zhao, Lilong; Pei, Shixin

2015-01-01

Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag + ion (Ag Zn ) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag 0 ). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive

Fabrication of Lanthanum Strontium Cobalt Ferrite-Gadolinium-Doped Ceria Composite Cathodes Using a Low-Price Inkjet Printer.

Science.gov (United States)

Han, Gwon Deok; Choi, Hyung Jong; Bae, Kiho; Choi, Hyeon Rak; Jang, Dong Young; Shim, Joon Hyung

2017-11-15

In this work, we have successfully fabricated lanthanum strontium cobalt ferrite (LSCF)-gadolinium-doped ceria (GDC) composite cathodes by inkjet printing and demonstrated their functioning in solid oxide fuel cells (SOFCs). The cathodes are printed using a low-cost HP inkjet printer, and the LSCF and GDC source inks are synthesized with fluidic properties optimum for inkjet printing. The composition and microstructure of the LSCF and GDC layers are successfully controlled by controlling the color level in the printed images and the number of printing cycles, respectively. Anode-support type SOFCs with optimized LSCF-GDC composite cathodes synthesized by our inkjet printing method have achieved a power output of over 570 mW cm -2 at 650 °C, which is comparable to the performance of a commercial SOFC stack. Electrochemical impedance analysis is carried out to establish a relationship between the cell performance and the compositional and structural characteristics of the printed LSCF-GDC composite cathodes.

Ceria nanoparticles vis-à-vis cerium nitrate as corrosion inhibitors for silica-alumina hybrid sol-gel coating

Energy Technology Data Exchange (ETDEWEB)

Lakshmi, R.V. [Surface Engineering Division, Council of Scientific and Industrial Research – National Aerospace Laboratories, HAL Airport Road, Kodihalli, Bengaluru 560017 (India); Aruna, S.T., E-mail: staruna194@gmail.com [Surface Engineering Division, Council of Scientific and Industrial Research – National Aerospace Laboratories, HAL Airport Road, Kodihalli, Bengaluru 560017 (India); Sampath, S. [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bengaluru 560012 (India)

2017-01-30

Highlights: • Corrosion protection efficiency comparison of ceria nanoparticles and cerium nitrate. • Silica-alumina hybrid coating exhibited good barrier protection. • Detailed XPS study confirm the hybrid structure and presence of Ce species in coating. • Loss of cerium ions not prevalent in ceria doped coating unlike that of cerium nitrate. • Ceria increased the coating integrity, corrosion inhibition and barrier protection. - Abstract: The present work provides a comparative study on the corrosion protection efficiency of defect free sol-gel hybrid coating containing ceria nanoparticles and cerium nitrate ions as corrosion inhibitors. Less explored organically modified alumina-silica hybrid sol-gel coatings are synthesized from 3-glycidoxypropyltrimethoxysilane and aluminium-tri-sec-butoxide. The microemulsion derived nanoparticles and the hybrid coatings are characterized and compared with coatings containing cerium nitrate. Corrosion inhibiting capability is assessed using electrochemical impedance spectroscopy. Scanning Kelvin probe measurements are also conducted on the coatings for identifying the apparent corrosion prone regions. Detailed X-ray photoelectron spectroscopy (XPS) analysis is carried out to comprehend the bonding and corrosion protection rendered by the hybrid coatings.

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Electrical and stability performance of anode-supported solid oxide fuel cells with strontium- and magnesium-doped lanthanum gallate thin electrolyte

Energy Technology Data Exchange (ETDEWEB)

Guo Weimin [College of Chemistry, South China University of Technology, Guangzhou 510640, Guangdong (China); Liu Jiang [College of Chemistry, South China University of Technology, Guangzhou 510640, Guangdong (China)], E-mail: jiangliu@scut.edu.cn; Zhang Yaohui [College of Chemistry, South China University of Technology, Guangzhou 510640, Guangdong (China)

2008-05-20

Anode-supported solid oxide fuel cells (SOFCs) comprising NiO-samarium-doped ceria (SDC) (Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9}) composite anode, thin tri-layer electrolyte, and La{sub 0.6}Sr{sub 0.4}Co{sub 0.8}Fe{sub 0.2}O{sub 3} (LSCF)-La{sub 0.9}Sr{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 3-{delta}} (LSGM) composite cathode were fabricated. The thin tri-layer consisting of an 11-{mu}m thick LSGM electrolyte layer and a 12-{mu}m thick La{sub 0.4}Ce{sub 0.6}O{sub 1.8} (LDC) layer on each side of the LSGM was prepared by centrifugal casting and co-firing technique. The performance of the cells operated with humidified H{sub 2} as fuel and ambient air as oxidant showed a maximum power density of 1.23 W cm{sup -2} at 800 deg. C. A stability test of about 100 h was carried out and some deterioration of output power was observed, while the open circuit voltage (OCV) kept unchanged. Impedance measurements showed that both the electrolyte ohmic resistance and the electrode polarization increased with time and the latter dominated the degradation.

Effect of Sr doping on LaTiO3 thin films

International Nuclear Information System (INIS)

Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

2005-01-01

We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

Co-deposition of Pt and ceria anode catalyst in supercritical carbon dioxide for direct methanol fuel cell applications

International Nuclear Information System (INIS)

You, Eunyoung; Guzmán-Blas, Rolando; Nicolau, Eduardo; Aulice Scibioh, M.; Karanikas, Christos F.; Watkins, James J.; Cabrera, Carlos R.

2012-01-01

Pt and mixed Pt-ceria catalysts were deposited onto gas diffusion layers using supercritical fluid deposition (SFD) to fabricate thin layer electrodes for direct methanol fuel cells. Dimethyl (1,5-cyclooctadiene) platinum (II) (CODPtMe 2 ) and tetrakis (2,2,6,6-tetramethyl 3,5-heptanedionato) cerium (IV) (Ce(tmhd) 4 ) were used as precursors. Hydrogen-assisted Pt deposition was performed in compressed carbon dioxide at 60 °C and 17.2 MPa to yield high purity Pt on carbon-black based gas diffusion layers. During the preparation of the mixed Pt-ceria catalyst, hydrogen reduction of CODPtMe 2 to yield Pt catalyzed the deposition of ceria from Ce(tmhd) 4 enabling co-deposition at 150 °C. The catalyst layers were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscope-energy dispersive spectral (SEM-EDS) analyses. Their electrochemical performance toward methanol oxidation was examined in half cell mode using a three electrode assembly as well as in fuel cell mode. The thin layer electrodes formed via SFD exhibited higher performance in fuel cell operations compared to those prepared by the conventional brush-paint method. Furthermore, the Pt-ceria catalyst with an optimized composition exhibited greater methanol oxidation activity than pure platinum.

Sulphate-ceria composite ceramics for energy environmental co-generation technology

International Nuclear Information System (INIS)

Liu, X.R.; Zhu, B.; Xu, J.; Sun, J.C.; Mao, Z.Q.

2005-01-01

In this work ion conductivity and FC application were studied for the new type composite material based on SDC (samarium doped ceria) and Li 2 SO 4 . Significant conductivity enhancement was achieved, e.g. 10 -2 -0.4 Scm -1 for the SDC-Li 2 SO 4 compared to 10 -4 -10 -2 Scm -1 for the SDC between 400 and 650 C. Some ion conductivity mechanisms were proposed correspondingly. Using the SDC-Li 2 SO 4 composite materials as the electrolytes, we achieved high performances, 200-540 mWcm -2 , for intermediate temperature (450-650 C) solid oxide FC (ITSOFC) applications. Sulfates, typically Li 2 SO 4 , have an excellent chemical stability in sulfur containing atmosphere. The sulfate-ceria (SDC-Li 2 SO 4 ) composite materials can thus meet the demands to develop the sulfur tolerant and H 2 S FC technologies, which was also demonstrated successfully with significant importance for both fundamental and applied research. (orig.)

Ni-YSZ cermet substrate supported thin SDC and YSZ+SDC bi-layer SOFCs

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.; Robertson, M.; Deces-Petit, C.; Xie, Y.; Hui, R.; Yick, S.; Styles, E.; Roller, J.; Kesler, O.; Qu, W.; Jankovic, J.; Tang, Z.; Perednis, D.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

2005-07-01

One of the disadvantages of a ceria-based electrolyte is that it becomes a mixed conductor at anode conditions, which causes cell voltage loss and fuel efficiency loss due to internal shorting. Chemical and mechanical stability is another concern for long-term service. To lower manufacturing costs, efforts have been made to bring proven semiconductor manufacturing technology to Solid Oxide Fuel Cells (SOFCs). This study employed Tape casting of cermet substrates, Screen-printing of functional layers and Co-firing of cell components (TSC) to fabricate nickel (Ni)-cermet supported cells with mainly ceria-based thin electrolytes. Ni-Yttria-Stabilized Zirconia (YSZ) cermet supported cell with Samaria Doped Ceria (SDC) single layer electrolytes and YSZ+SDC bi-layer electrolytes were successfully developed for low-temperature performance characterization. The elemental distribution at the cell interface was mapped and the electrochemical performance of the cells was recorded. Many high-Zr-content micro-islands were found on the thin SDC surface. The influence of co-firing temperature and thin-film preparation methods on the Zr-islands' appearance was also investigated. Using in-situ sintered cathodes, high performance of the SDC cells was obtained. It was concluded that the bi-layer cells did show higher Open Circuit Voltage (OCV) values, with 1180 mW/cm{sup 2} at 650 degrees C, as well as good performance at 700-800 degrees C, with near OCV value. However, their performance was much lower than those of the SDC cells at low operating temperature. Zr-micro-islands formation on the SDC electrolyte was observed and investigated. 6 refs., 5 tabs., 7 figs.

Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

2014-01-01

In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

Mechanical characterization of hydroxyapatite, thermoelectric materials and doped ceria

Science.gov (United States)

Fan, Xiaofeng

For a variety of applications of brittle ceramic materials, porosity plays a critical role structurally and/or functionally, such as in engineered bone scaffolds, thermoelectric materials and in solid oxide fuel cells. The presence of porosity will affect the mechanical properties, which are essential to the design and application of porous brittle materials. In this study, the mechanical property versus microstructure relations for bioceramics, thermoelectric (TE) materials and solid oxide fuel cells were investigated. For the bioceramic material hydroxyapatite (HA), the Young's modulus was measured using resonant ultrasound spectroscopy (RUS) as a function of (i) porosity and (ii) microcracking damage state. The fracture strength was measured as a function of porosity using biaxial flexure testing, and the distribution of the fracture strength was studied by Weibull analysis. For the natural mineral tetrahedrite based solid solution thermoelectric material (Cu10Zn2As4S13 - Cu 12Sb4S13), the elastic moduli, hardness and fracture toughness were studied as a function of (i) composition and (ii) ball milling time. For ZiNiSn, a thermoelectric half-Heusler compound, the elastic modulus---porosity and hardness---porosity relations were examined. For the solid oxide fuel cell material, gadolina doped ceria (GDC), the elastic moduli including Young's modulus, shear modulus, bulk modulus and Poisson's ratio were measured by RUS as a function of porosity. The hardness was evaluated by Vickers indentation technique as a function of porosity. The results of the mechanical property versus microstructure relations obtained in this study are of great importance for the design and fabrication of reliable components with service life and a safety factor. The Weibull modulus, which is a measure of the scatter in fracture strength, is the gauge of the mechanical reliability. The elastic moduli and Poisson's ratio are needed in analytical or numerical models of the thermal and

Self-combustion synthesis and oxygen storage properties of mesoporous gadolinia-doped ceria nanotubes

Energy Technology Data Exchange (ETDEWEB)

Yang Tao [College of Environmental and Energy Engineering, Beijing University of Technology (BUT-CEEE), Chaoyang District 100124, Beijing (China); Xia Dingguo, E-mail: yangtaophoenix@yahoo.com.cn [College of Environmental and Energy Engineering, Beijing University of Technology (BUT-CEEE), Chaoyang District 100124, Beijing (China)

2010-10-01

Ethyl glycol and citric acid, along with metal nitrates have been used to prepare Ce{sub 0.9}Gd{sub 0.1}O{sub 2-x} nanotubes directed at the anodic alumina oxide (AAO) template by combustion route. The tubes produced by the self-combustion route do not need any further calcination step. XRD patterns show the doped-ceria tubes have the flurite-type structure and no impurities are detected. The specific surface area of the tube is 112.7 m{sup 2} g{sup -1} and N{sub 2} adsorption-desorption profiles of the BET measurement shows the tubes are mesoporous. The largest aspect ratio of a nanotube reaches 20:1 and the TEM observation reveals the hollow structure. The Ce:Gd molar ratio calculated from the EDS and ICP-AES is 9:1 and the selected area electron diffraction confirms the flurite-type structure from the XRD characterization. The combined thermogravimetry-differential thermal analysis has been carried out to study the combustion reactions in the tube-forming process. The thermal stability of the nanotubes under both reductive and oxidative atmospheres is tested using the dynamic reduction/reoxidation reactions. At last, the oxygen storage capacity (OSC) of the nanotubes is calculated to be 695 {mu}mol-O{sup 2} g{sup -1} from the temperature-programed reduction reaction.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

Science.gov (United States)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

2012-12-05

Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

Science.gov (United States)

Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

2015-09-21

: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

2014-01-01

Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

An initial applications study of ceria-gadolinia solid oxide fuel cells: V. 1

Energy Technology Data Exchange (ETDEWEB)

Bauen, A.; Hart, D.; Mould, B.

1998-11-01

Fuel cells are categorised by their electrolytes, and the solid oxide fuel cell is so called because its electrolyte consists of a solid ceramic oxide. Commonly this has been a form of zirconia, though other materials are now being considered for their different electrical properties. One of these, ceria doped with gadolinia, shows promise for use in lower temperature regimes than zirconia, and may open up different areas of a future market for consideration. This report considers the opportunities for ceria-gadolinia solid oxide fuel cell systems by comparing them with the application requirements in markets where fuel cells may have potential. The advantages and disadvantages of the technology are analysed, together with the state of the art in research and development. The direction in which research effort needs to move to address some of the issues is assessed. The report then draws conclusions regarding the potential of ceria-gadolinia in solid oxide fuel cell systems and in the energy markets as a whole. It should be noted that while this report is an applications study, some technology assessment has been included. Much of this is found in Volume 2. (author)

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

2015-07-15

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Directory of Open Access Journals (Sweden)

Nen-Wen Pu

2015-09-01

Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Directory of Open Access Journals (Sweden)

Simona Liliana Iconaru

2014-01-01

Full Text Available In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM with energy Dispersive X-ray attachment (X-EDS, Fourier transform infrared spectroscopy (FT-IR, and glow discharge optical emission spectroscopy (GDOES. These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with xAg=0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

Physical properties and characterization of Ag doped CdS thin films

International Nuclear Information System (INIS)

Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

2012-01-01

Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

Preparation of thin layer materials with macroporous microstructure for SOFC applications

International Nuclear Information System (INIS)

Marrero-Lopez, D.; Ruiz-Morales, J.C.; Pena-Martinez, J.; Canales-Vazquez, J.; Nunez, P.

2008-01-01

A facile and versatile method using polymethyl methacrylate (PMMA) microspheres as pore formers has been developed to prepare thin layer oxide materials with controlled macroporous microstructure. Several mixed oxides with fluorite and perovskite-type structures, i.e. doped zirconia, ceria, ferrites, manganites, and NiO-YSZ composites have been prepared and characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen adsorption and mercury porosimetry. The synthesised materials are nanocrystalline and present a homogeneous pore distribution and relatively high specific surface area, which makes them interesting for SOFC and catalysis applications in the intermediate temperature range. - Graphical abstract: Thin films materials of mixed oxides with potential application in SOFC devices have been prepared with macroporous microstructure using PMMA microspheres as pore formers. Display Omitted

Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

International Nuclear Information System (INIS)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

2014-01-01

Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films

Energy Technology Data Exchange (ETDEWEB)

Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

2010-05-26

We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.

Synthesis and characterization of Gd_0.1Ce_0.9O_1.95 thin films by spray pyrolysis technique

DEFF Research Database (Denmark)

Chourashiya, M. G.; Pawar, S. H.; Jadhav, L. D.

2008-01-01

The Gd doped ceria (CGO) in thin layers is of great interest for low temperature operation. In the present investigation, we report on the use of spray pyrolysis technique for the synthesis of CGO thin films. The process parameters were optimized for synthesizing Gd0.1Ce0.9O1.95 films. Films were...... characterized by XRD, EDS, SEM, and AFM and are observed to be phase pure and dense with surface roughness of the order of ∼5 nm. The d.c. conductivity was also measured and is observed to be ∼0.5 S/cm at 623 K....

Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

Directory of Open Access Journals (Sweden)

K. Usharani

2015-06-01

Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

Science.gov (United States)

Man, Hamdi

Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

Science.gov (United States)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

KAUST Repository

Hong, Nguyenhoa

2013-10-04

We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

Structural and vibrational investigations of Nb-doped TiO2 thin films

International Nuclear Information System (INIS)

Uyanga, E.; Gibaud, A.; Daniel, P.; Sangaa, D.; Sevjidsuren, G.; Altantsog, P.; Beuvier, T.; Lee, Chih Hao; Balagurov, A.M.

2014-01-01

Highlights: • We studied the evolutions of structure for TiO 2 thin film as changes with Nb doping and temperatures. • Up to 800 °C, the grain size of Nb 0.1 Ti 0.9 O 2 is smaller than for pure TiO 2 because doped Nb hinders the growth of the TiO 2 grains. • There was no formation of the rutile phase at high temperature. • Nb doped TiO 2 films have high electron densities at 400–700 °C. • Nb dope extends the absorbance spectra of TiO 2 which leads to the band gap reduce. - Abstract: Acid-catalyzed sol–gel and spin-coating methods were used to prepare Nb-doped TiO 2 thin film. In this work, we studied the effect of niobium doping on the structure, surface, and absorption properties of TiO 2 by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), Raman, and UV–vis absorption spectroscopy at various annealing temperatures. EDX spectra show that the Nb:Ti atomic ratios of the niobium-doped titania films are in good agreement with the nominal values (5 and 10%). XPS results suggest that charge compensation is achieved by the formation of Ti vacancies. Specific niobium phases are not observed, thus confirming that niobium is well incorporated into the titania crystal lattice. Thin films are amorphous at room temperature and the formation of anatase phase appeared at an annealing temperature close to 400 °C. The rutile phase was not observed even at 900 °C (XRD and Raman spectroscopy). Grain sizes and electron densities increased when the temperature was raised. Nb-doped films have higher electron densities and lower grain sizes due to niobium doping. Grain size inhibition can be explained by lattice stress induced by the incorporation of larger Nb 5+ ions into the lattice. The band gap energy of indirect transition of the TiO 2 thin films was calculated to be about 3.03 eV. After niobium doping, it decreased to 2.40 eV

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

An investigation on the In doping of ZnO thin films by spray pyrolysis

Science.gov (United States)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

Energy Technology Data Exchange (ETDEWEB)

Kellogg, Isaiah D. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States); Koylu, Umit O. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States)

2010-11-01

Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration. (author)

Investigation of nozzle shape effect on Sm0.1Ce0.9O1.95 thin film prepared by electrostatic spray deposition

International Nuclear Information System (INIS)

Ksapabutr, Bussarin; Panapoy, Manop; Choncharoen, Kittikhun; Wongkasemjit, Sujitra; Traversa, Enrico

2008-01-01

Dense samarium doped ceria (SDC) thin films are deposited using electrostatic spray deposition (ESD) technique. The influences of nozzle shape on the distribution of liquid jet at the nozzle tip and the morphology of the deposited SDC films are elucidated. Geometries of three nozzles employed are flat, sawtooth and wedge tips. From the observation of jet formation, the nozzle in flat shape gives the highest distribution of emitted droplets. The deposited films are characterized using a combination of XRD, SEM and AFM techniques. XRD results reveal that the single-phase fluorite structure forms at a relatively low deposition temperature of 400 o C. The flat spray tip provides the most uniform and smooth thin films, and also presents the lowest agglomeration of particles on thin-film surface

Effects of Mn doping on the ferroelectric properties of PZT thin films

International Nuclear Information System (INIS)

Zhang Qi

2004-01-01

The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

2017-11-01

Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

2016-01-01

Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

Antibacterial effects of silver-doped hydroxyapatite thin films sputter deposited on titanium

International Nuclear Information System (INIS)

Trujillo, Nathan A.; Oldinski, Rachael A.; Ma, Hongyan; Bryers, James D.; Williams, John D.; Popat, Ketul C.

2012-01-01

Since many orthopedic implants fail as a result of loosening, wear, and inflammation caused by repeated loading on the joints, coatings such as hydroxyapatite (HAp) on titanium with a unique topography have been shown to improve the interface between the implant and the natural tissue. Another serious problem with long-term or ideally permanent implants is infection. It is important to prevent initial bacterial colonization as existing colonies have the potential to become encased in an extracellular matrix polymer (biofilm) that is resistant to antibacterial agents. In this study, plasma-based ion implantation was used to examine the effects of pre-etching on plain titanium. Topographical changes to the titanium samples were examined and compared via scanning electron microscopy. Hydroxyapatite and silver-doped hydroxyapatite thin films were then sputter deposited on titanium substrates etched at − 700 eV. For silver-doped films, two concentrations of silver (∼ 0.5 wt.% and ∼ 1.5 wt.%) were used. Silver concentrations in the film were determined using energy dispersive X-ray spectroscopy. Hydroxyapatite film thicknesses were determined by measuring the surface profile using contact profilometry. Staphylococcus epidermidis and Pseudomonas aeruginosa adhesion studies were performed on plain titanium, titanium coated with hydroxyapatite, titanium coated with ∼ 0.5 wt.% silver-doped hydroxyapatite, and titanium coated with ∼ 1.5 wt.% silver-doped hydroxyapatite. Results indicate that less bacteria adhered to surfaces containing hydroxyapatite and silver; further, as the hydroxyapatite films delaminated, silver ions were released which killed bacteria in suspension. - Highlights: ► We have developed a combination of plasma-based ion implantation and ion beam sputter deposition technique. ► Silver-doped hydroxyapatite thin films on titanium were developed. ► The thin films showed the ability to control the concentration of silver that is doped within the

Study of growth of gadolinium-doped ceria nanobelts by a hydrothermal microwave system; Estudo do crescimento de nanofitas de ceria dopada com gadolinio por sistema de aquecimento por micro-ondas

Energy Technology Data Exchange (ETDEWEB)

Goncalves, R.F.; Castro, D.A.; Santos, M.R.C.; Figueiredo, A.T.; Godinho Junior, M. [Universidade Federal de Goias (UFG), Catalao, GO (Brazil). Dept. de Quimica; Barrado, C.M. [Universidade Federal do Para (UFPA), Belem, PA (Brazil). Inst. de Ciencias Exatas e Naturais; Leite, E.R. [Universidade Federal de Sao Carlos (INCTMN/UFSCar), SP (Brazil). Dept. de Qumica

2013-07-15

Cerium oxide (ceria) has attracted attention because of its important applications such as solid oxide fuel cells, catalysts for automobile exhaust gas, catalysts to obtain hydrogen, UV blockers, biomaterials, etc.. Control methods for synthesis of ceria are of great importance to explain or predict these properties. Thus, the objective of this work was to study the growth of cerium oxide nanobelts in a microwave-assisted hydrothermal system, where in 8 min 330 nm nanobelts were obtained at 130 deg C and 3 atm. The results collaborate to the research on reformers for ethanol and/or solid oxide fuel cells anode. (author)

Synthesis and characterization of mesoporous ceria/alumina nanocomposite materials via mixing of the corresponding ceria and alumina gel precursors.

Science.gov (United States)

Khalil, Kamal M S

2007-03-01

Mesoporous ceria/alumina, CeO(2)/Al(2)O(3), composites containing 10, 20 and 30% (w/w) ceria were prepared by a novel gel mixing method. In the method, ceria gel (formed via hydrolysis of ammonium cerium(IV) nitrate by aqueous ammonium carbonate solution) and alumina gel (formed via controlled hydrolysis of aluminum tri-isopropoxide) were mixed together. The mixed gel was subjected to subsequent drying and calcination for 3 h at 400, 600, 800 and 1000 degrees C. The uncalcined (dried at 110 degrees C) and the calcined composites were investigated by different techniques including TGA, DSC, FTIR, XRD, SEM and nitrogen adsorption/desorption isotherms. Results indicated that composites calcined for 3 h at 800 degrees C mainly kept amorphous alumina structure and gamma-alumina formed only upon calcinations at 1000 degrees C. On the other hand, CeO(2) was found to crystallize in the common ceria, cerinite, phase and it kept this structure over the entire calcination range (400-1000 degrees C). Therefore, high surface areas, stable surface textures, and non-aggregated nano-sized ceria dispersions were obtained. A systematic texture change based on ceria ratio was observed, however in all cases mesoporous composite materials exposing thermally stable texture and structure were obtained. The presented method produces composite ceria/alumina materials that suit different applications in the field of catalysis and membranes technology, and throw some light on physicochemical factors that determine textural morphology and thermal stability of such important composite.

Effect of grain mobility on ionic conductivity of Ceria added YSZ electrolyte

International Nuclear Information System (INIS)

Gupta, Alka; Omar, Shobit; Balani, Kantesh

2012-01-01

In an effort to develop novel electrolyte materials, the present work explores the effect of grain boundary mobility on ionic conductivity of CeO 2 -YSZ electrolyte. For cubic zirconia in general, the higher the grain boundary mobility, the lower the activation energy for oxide ion migration and judicious doping can be an effective method for mobility control. The two main directions for fabricating 8 mol. % YSZs (8YSZ) with 0,5 and 10 wt % CeO 2 are being followed: (i) co doping by conventional sintering (CS, 1400 ℃, 4h holding, ∼98 % theoretical density), and (ii) nano composite approach by spark plasma sintering (SPS, 1200 ℃, 5 min holding, ∼96 % theoretical density). Phase analysis by XRD, indicates that CeO 2 forms the complete solid solution with YSZ when synthesized by CS and both solid solution and composite formation (seen as isolated ceria rich zones in YSZ matrix by EDS analysis via TEM) by SPS. The grain boundary mobility for CS samples of pure and 10%CeO 2 added YSZ are 6.69 x 10 -18 to 10.35 X 10 -18 m 3 /N/s respectively. While for SPS sintered samples of pure and 10% CeO 2 added YSZ the grain boundary mobility comes out to be ∼0.032 X 10 -18 to 0.039 X 10 18 m 3 /N/s respectively. Grain mobility does not show any marginal change with increasing ceria content, elicit that the defect concentration is nearly constant in 8YSZ and is insensitive to ceria content. Remarkable increase of grain mobility in the SPS samples is attributed to rapid grain coarsening in the nano-grains limited to shorter sintering times. As expected, grain mobility for longer-times average out the transient phase and lower the net grain mobility such as in CS samples. The enhanced mobility in CeO 2 -YSZ SPS sintered electrolytes must be due to lower cation migration energy (activation energy for oxide ion migration), promoting enhanced ionic conductivity. (author)

Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

2014-07-25

Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

A novel recipe to improve the magnetic properties of Mn doped CeO{sub 2} as a room temperature ferromagnetic diluted metal oxide

Energy Technology Data Exchange (ETDEWEB)

Al-Agel, Faisal A., E-mail: fagel2@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Arfaj, Esam [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Al-Ghamdi, Ahmed A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Losovyj, Yaroslav [Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States); Bronstein, Lyudmila M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States); Mahmoud, Waleed E. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt)

2014-06-01

Mn doped ceria nanocrystals have been prepared using hexamethylene triperoxide diamine assisted solvothermal technique for the first time. The impact of this novel recipe on the structure, magnetic and spectroscopic behaviors was discussed. The doped oxides were studied using X-ray powder diffraction (XRD), transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), and magnetic measurements. The XRD analysis revealed that all the powders can be indexed to the pure cubic ceria, revealing complete solubility of Mn atoms in the ceria crystal structure with an interstitial substitution of Mn in the Ce sites. At the percolation concentration x=0.08 (Mn{sub 0.08}Ce{sub 0.92}O{sub 2}), the Mn doped cerium oxide displays a very high saturation magnetization of 4.48 emu/g and coercivity of 175.5 Oe. The enhanced magnetic properties are attributed to the formation of the complex between the Mn ion and an oxygen vacancy which is confirmed by the XPS analysis. According to the obtained results, one can say that this novel synthetic recipe increased the solubility of Mn ions into the CeO{sub 2} crystal structure and improved the magnetization by more than 37 times compared to the Mn doped CeO{sub 2} prepared by conventional methods. - Highlights: • Mn doped ceria was prepared by HMTD assisted solvothermal technique. • Complete solubility of Mn atoms in the ceria structure was achieved up to 10 at%. • High saturation magnetization of 4.48 emu/g was achieved at 8 at%. • The magnetization was improved by more than 37 times compared to conventional methods.

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

Energy Technology Data Exchange (ETDEWEB)

Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

2016-05-05

This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

Magnetic hysteresis of cerium doped bismuth ferrite thin films

International Nuclear Information System (INIS)

Gupta, Surbhi; Tomar, Monika; Gupta, Vinay

2015-01-01

The influence of Cerium doping on the structural and magnetic properties of BiFeO 3 thin films have been investigated. Rietveld refinement of X-ray diffraction data and successive de-convolution of Raman scattering spectra of Bi 1−x Ce x FeO 3 (BCFO) thin films with x=0–0.20 reflect the single phase rhombohedral (R3c) formation for x<0.08, whereas concentration-driven gradual structural phase transition from rhombohedral (R3c) to partial tetragonal (P4mm) phase follows for x≥0.08. All low wavenumber Raman modes (<300 cm −1 ) showed a noticeable shift towards higher wavenumber with increase in doping concentration, except Raman E-1 mode (71 cm −1 ), shows a minor shift. Sudden evolution of Raman mode at 668 cm −1 , manifested as A 1 -tetragonal mode, accompanied by the shift to higher wavenumber with increase in doping concentration (x) affirm partial structural phase transition. Anomalous wasp waist shaped (M–H) hysteresis curves with improved saturation magnetization (M s ) for BCFO thin films is attributed to antiferromagnetic interaction/hybridization between Ce 4f and Fe 3d electronic states. The contribution of both hard and soft phase to the total coercivity is calculated. Polycrystalline Bi 0.88 Ce 0.12 FeO 3 thin film found to exhibit better magnetic properties with M s =15.9 emu/g without any impure phase. - Highlights: • Synthesis of single phase Bi 1−x Ce x FeO 3 thin films with (x=0–0.2) on cost effective corning glass and silicon substrates using CSD technique. • Structural modification studies using Rietveld refinement of XRD and de-convolution of Raman spectra revealed partial phase transition from rhombohedral (R3c) to tetragonal (P4mm) phase. • Possible reasons for origin of pinched magnetic behavior of BCFO thin films are identified. • Contribution of both hard and soft magnetic phase in coercivity of BCFO thin films is calculated and practical applications of such materials exhibiting pinching behavior are conferred

Magnetic hysteresis of cerium doped bismuth ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Gupta, Surbhi [Department of Physics and Astrophysics, University of Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi (India)

2015-03-15

The influence of Cerium doping on the structural and magnetic properties of BiFeO{sub 3} thin films have been investigated. Rietveld refinement of X-ray diffraction data and successive de-convolution of Raman scattering spectra of Bi{sub 1−x}Ce{sub x}FeO{sub 3} (BCFO) thin films with x=0–0.20 reflect the single phase rhombohedral (R3c) formation for x<0.08, whereas concentration-driven gradual structural phase transition from rhombohedral (R3c) to partial tetragonal (P4mm) phase follows for x≥0.08. All low wavenumber Raman modes (<300 cm{sup −1}) showed a noticeable shift towards higher wavenumber with increase in doping concentration, except Raman E-1 mode (71 cm{sup −1}), shows a minor shift. Sudden evolution of Raman mode at 668 cm{sup −1}, manifested as A{sub 1}-tetragonal mode, accompanied by the shift to higher wavenumber with increase in doping concentration (x) affirm partial structural phase transition. Anomalous wasp waist shaped (M–H) hysteresis curves with improved saturation magnetization (M{sub s}) for BCFO thin films is attributed to antiferromagnetic interaction/hybridization between Ce 4f and Fe 3d electronic states. The contribution of both hard and soft phase to the total coercivity is calculated. Polycrystalline Bi{sub 0.88}Ce{sub 0.12}FeO{sub 3} thin film found to exhibit better magnetic properties with M{sub s}=15.9 emu/g without any impure phase. - Highlights: • Synthesis of single phase Bi{sub 1−x}Ce{sub x}FeO{sub 3} thin films with (x=0–0.2) on cost effective corning glass and silicon substrates using CSD technique. • Structural modification studies using Rietveld refinement of XRD and de-convolution of Raman spectra revealed partial phase transition from rhombohedral (R3c) to tetragonal (P4mm) phase. • Possible reasons for origin of pinched magnetic behavior of BCFO thin films are identified. • Contribution of both hard and soft magnetic phase in coercivity of BCFO thin films is calculated and practical

In situ ellipsometry — A powerful tool for monitoring alkali doping of organic thin films

International Nuclear Information System (INIS)

Haidu, F.; Ludemann, M.; Schäfer, P.; Gordan, O.D.; Zahn, D.R.T.

2014-01-01

The changes of the optical properties of several organic thin films induced by potassium doping were monitored using in situ spectroscopic ellipsometry. The samples were prepared in a high vacuum chamber by organic molecular deposition. Then, potassium (K) was evaporated by passing current through K getters. The three different organic molecules used, show very distinct and different spectral behaviour upon doping. While for Tris-(8-hydroxyquinoline)-aluminium(III) and N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine only small shifts of the spectral features were noticed, Manganese Phthalocyanine revealed significant changes of the optical properties induced by the K doping. This work indicates that the K doping process can have a dramatic effect on the electronic and the optical properties of the organic molecules, but the effect on the optical spectra remains specific for each organic molecule used, and cannot be easily predicted. - Highlights: • Monitoring organic film growth and doping with in situ spectroscopic ellipsometry • K doped organic thin films • Optical properties of organic thin films change by K doping. • The changes in the optical spectra remain specific for each organic molecule used

Optical and electrical properties of TiOPc doped Alq{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ramar, M.; Suman, C. K., E-mail: sumanck@nplindia.org; Tyagi, Priyanka; Srivastava, R. [CSIR-Network of Institutes for Solar Energy CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012 (India)

2015-06-24

The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq{sub 3} and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10{sup −5} cm{sup 2}/Vs. The Cole-Cole plots shows that the TiOPc doped Alq{sub 3} thin film can be represented by a single parallel resistance R{sub P} and capacitance C{sub P} network with a series resistance R{sub S} (10 Ω). The value of R{sub P} and C{sub P} at zero bias was 1587 Ω and 2.568 nF respectively. The resistance R{sub P} decreases with applied bias whereas the capacitance C{sub P} remains almost constant.

Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

Science.gov (United States)

Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

2014-04-01

In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

Science.gov (United States)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

International Nuclear Information System (INIS)

Pawar, S.M.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

2007-01-01

The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH 3 COO) 2 .Cd.2H 2 O, SeO 2 , and FeCl 3 at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E g from 1.95 to 1.65 eV

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

Elevated transition temperature in Ge doped VO2 thin films

Science.gov (United States)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

Science.gov (United States)

Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

2017-08-01

A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

Directory of Open Access Journals (Sweden)

Shi-Yi Zhuo

2012-03-01

Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

Institute of Scientific and Technical Information of China (English)

Mehdi Ahmadi; Sajjad Rashidi Dafeh; Samaneh Ghazanfarpour; Mohammad Khanzadeh

2017-01-01

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester (PCBM).1％ vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method.Crystalline structure,morphology,and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction,scanning electron microscopy,transmittance electron microscopy,and UV-visible transmission spectrum.The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm.The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm.The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart.In the cells using 60 nm pure and vanadium-doped TiO2 layers,the cell using the doped layer showed much higher efficiency.It is remarkable that the extemal quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths.

Optoelectronic properties of doped hydrothermal ZnO thin films

KAUST Repository

Mughal, Asad J.

2017-03-10

Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

Chemical bath deposition of CdS thin films doped with Zn and Cu

Indian Academy of Sciences (India)

Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ... Cadmium sulfide; chemical bath deposition; doping; optical window. 1. ..... at low temperature (10 K), finding similar trends than.

Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Mehdizadeh Dehkordi, Arash; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Thermochemical reactivity of 5–15 mol% Fe, Co, Ni, Mn-doped cerium oxides in two-step water-splitting cycle for solar hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Gokon, Nobuyuki, E-mail: ngokon@eng.niigata-u.ac.jp [Center for Transdisciplinary Research, Niigata University, 8050 Ikarashi 2-nocho, Nishi-ku, Niigata 950-2181 (Japan); Suda, Toshinori [Graduate School of Science and Technology, Niigata University, 8050 Ikarashi 2-nocho, Niigata 950-2181 (Japan); Kodama, Tatsuya [Department of Chemistry & Chemical Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2-nocho, Niigata 950-2181 (Japan)

2015-10-10

Highlights: • 5–15 mol% M-doped ceria are examined for thermochemical two-step water-splitting. • 5 mol% Fe- and Co-doped ceria have stoichiometric production of oxygen and hydrogen. • 10–15 mol% Fe- and Mn-doped ceria showed near-stoichiometric production. - Abstract: The thermochemical two-step water-splitting cycle using transition element-doped cerium oxide (M–CeO{sub 2−δ}; M = Fe, Co, Ni, Mn) powders was studied for hydrogen production from water. The oxygen/hydrogen productivity and repeatability of M–CeO{sub 2−δ} materials with M doping contents in the 5–15 mol% range were examined using a thermal reduction (TR) temperature of 1500 °C and water decomposition (WD) temperatures in the 800–1150 °C range. The temperature, steam partial pressure, and steam flow rate in the WD step had an impact on the hydrogen productivity and production rate. 5 mol% Fe- and Co-doped CeO{sub 2−δ} enhances hydrogen productivity by up to 25% on average compared to undoped CeO{sub 2}, and shows stable repeatability of stoichiometric oxygen and hydrogen production for the cyclic thermochemical two-step water-splitting reaction. In addition, 5 mol% Mn-doped CeO{sub 2−δ}, 10 and 15 mol% Fe- and Mn-doped CeO{sub 2−δ} show near stoichiometric reactivities.

Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

2008-01-01

Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

Impact of dynamic specimen shape evolution on the atom probe tomography results of doped epitaxial oxide multilayers: Comparison of experiment and simulation

Energy Technology Data Exchange (ETDEWEB)

Madaan, Nitesh; Nandasiri, Manjula; Devaraj, Arun, E-mail: arun.devaraj@pnnl.gov [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, 3335 Innovation Boulevard, Richland, Washington 99354 (United States); Bao, Jie [Energy and Environment Directorate, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, Washington 99354 (United States); Xu, Zhijie [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, Washington 99354 (United States); Thevuthasan, Suntharampillai [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, 3335 Innovation Boulevard, Richland, Washington 99354 (United States); Qatar Environment and Energy Research Institute, Qatar Foundation, PO Box 5825, Doha (Qatar)

2015-08-31

The experimental atom probe tomography (APT) results from two different specimen orientations (top-down and sideways) of a high oxygen ion conducting Samaria-doped-ceria/Scandia-stabilized-zirconia multilayer thin film solid oxide fuel cell electrolyte was compared with level-set method based field evaporation simulations for the same specimen orientations. This experiment-simulation comparison explains the dynamic specimen shape evolution and ion trajectory aberrations that can induce density artifacts in final reconstruction, leading to inaccurate estimation of interfacial intermixing. This study highlights the importance of comparing experimental results with field evaporation simulations when using APT to study oxide heterostructure interfaces.

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Fluorine doped vanadium dioxide thin films for smart windows

International Nuclear Information System (INIS)

Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

2011-01-01

Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

Fermi Potential across Working Solid Oxide Cells with Zirconia or Ceria Electrolytes

DEFF Research Database (Denmark)

Jacobsen, Torben; Chatzichristodoulou, Christodoulos; Mogensen, Mogens Bjerg

2014-01-01

A solid electrolyte will always possess a finite electronic conductivity, in particular electrolytes like doped ceria that easily get reduced and become mixed ionic and electronic conductors. This given rise too high leak currents through the solid oxide cell (SOC). Especially, problems have been...... driving the O2-ions is not the Fermi potential, which is the potential of the electrons, but the Galvani potential (or inner potential) (1). The concepts of potentials describing the electrical situation of a solid electrolyte is shown i Fig. 1, and an example of the Fermi potential (π) and Galvani...

Pt/Ceria-based Catalysts for Small Alcohol Electrooxidation

Science.gov (United States)

Menendez-Mora, Christian L.

High emissions of fossil-based energy sources have led to scientists around the world to develop new alternatives for the future. In this sense, fuel cells are a remarkable and promising energy option with less environmental impact. The most used fuels for this technology are hydrogen and small chain alcohols, which can be oxidized to transform their chemical energy into electrical power. To do this, fuel cells need catalysts that will act as an active surface where the oxidation can take place. The problem with platinum catalysts is its possible CO poisoning with intermediates that are produced before the complete oxidation of alcohol to CO2. Different approaches have been taken to try to resolve this issue. In this case, cerium oxide (ceria) was selected as a co-catalyst to mitigate the effect of CO poisoning of platinum. Ceria is a compound that has the ability to work as an "oxygen tank" and can donate oxygen to carbon monoxide that is strongly adsorbed at platinum surface to produce CO2 (carbon dioxide), regenerating the Pt surface for further alcohol oxidation. Therefore, enhancing the current density as well as the power output of a fuel cell. First, an occlusion deposition technique was used to prepare platinum/ceria composite electrodes and tested them towards small chain alcohol oxidation such as methanol oxidation reaction in acidic and alkaline media. The preliminary results demonstrated that the Pt/ceria electrodes were more efficient towards methanol electrooxidation when compared to Pt electrodes. This enhancement was attributed to the presence of ceria. A second preparation method was selected for the synthesis of ceria/Pt catalysts. In this case, a hydrothermal method was used and the catalysis were studied for the effect of MeOH, EtOH and n-BuOH oxidation. The observed effect was that electrodes made of Pt/Pt:CeO2-x showed better catalytic effect than Pt/ceria and platinum electrodes. Moreover, a comparison between ceria nanorods versus

Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO{sub 2} thin film

Energy Technology Data Exchange (ETDEWEB)

Rasoulnezhad, Hossein [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Kavei, Ghassem, E-mail: kaveighassem@gmail.com [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Ahmadi, Kamran [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Rahimipour, Mohammad Reza [Ceramic Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of)

2017-06-30

Highlights: • Combination of sonochemical and CVD methods for preparation of nanostructured carbon-doped TiO{sub 2} thin film on glass substrate, for the first time. • High transparency, monodispersity and homogeneity of the prepared thin films. • Preparation of the carbon-doped TiO{sub 2} thin films with nanorod and nanosphere morphologies. - Abstract: The present work reports the successful synthesis of the nanostructured carbon-doped TiO{sub 2} thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO{sub 2} sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO{sub 2} thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO{sub 2} to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

Science.gov (United States)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Morphology and the isoelectric point of nanosized aqueous ceria sols

International Nuclear Information System (INIS)

Gulicovski, Jelena J.; Bračko, Ines; Milonjić, Slobodan K.

2014-01-01

Ceria sols were synthesized by a forced hydrolysis method using cerium sulphate or cerium nitrate as precursors. High-resolution TEM was used to determine the microstructure and particle size of CeO 2 . A polycrystalline structure of ceria sols with crystallite sizes of 4.4 and 8.6 nm was obtained. The particles had a well-defined polyhedral shape. Direct bandgaps for ceria nanoparticles were 2.80 and 3.31 eV, respectively. The isoelectric point, pH iep , of ceria sols in KNO 3 solutions was investigated. The isoelectric point of ceria was found to be pH iep  = 7.6 ± 0.2. The obtained results indicate that the isoelectric point in the presence of SO 4 2− ions shifts to lower pH value. The particle size of ceria increases with pH, reaching the maximum value at pH iep as the result of agglomeration . - Highlights: • Ceria sols with cubic phase nanoparticles have been successfully synthesized. • The isoelectric point of ceria oxide in KNO 3 solutions was p Hiep  = 7.6 ± 0.2. • The specific adsorption of SO 4 2− ions causes a shift in IEP to lower pH (pH iep  = 6.7). • The correlation between IEP and the maximum diameter of particles was observed

Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

2014-07-01

Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Electromagnetic and optical characteristics of Nb5+-doped double-crossover and salmon DNA thin films

Science.gov (United States)

Babu Mitta, Sekhar; Reddy Dugasani, Sreekantha; Jung, Soon-Gil; Vellampatti, Srivithya; Park, Tuson; Park, Sung Ha

2017-10-01

We report the fabrication and physical characteristics of niobium ion (Nb5+)-doped double-crossover DNA (DX-DNA) and salmon DNA (SDNA) thin films. Different concentrations of Nb5+ ([Nb5+]) are coordinated into the DNA molecules, and the thin films are fabricated via substrate-assisted growth (DX-DNA) and drop-casting (SDNA) on oxygen plasma treated substrates. We conducted atomic force microscopy to estimate the optimum concentration of Nb5+ ([Nb5+]O = 0.08 mM) in Nb5+-doped DX-DNA thin films, up to which the DX-DNA lattices maintain their structures without deformation. X-ray photoelectron spectroscopy (XPS) was performed to probe the chemical nature of the intercalated Nb5+ in the SDNA thin films. The change in peak intensities and the shift in binding energy were witnessed in XPS spectra to explicate the binding and charge transfer mechanisms between Nb5+ and SDNA molecules. UV-visible, Raman, and photoluminescence (PL) spectra were measured to determine the optical properties and thus investigate the binding modes, Nb5+ coordination sites in Nb5+-doped SDNA thin films, and energy transfer mechanisms, respectively. As [Nb5+] increases, the absorbance peak intensities monotonically increase until ˜[Nb5+]O and then decrease. However, from the Raman measurements, the peak intensities gradually decrease with an increase in [Nb5+] to reveal the binding mechanism and binding sites of metal ions in the SDNA molecules. From the PL, we observe the emission intensities to reduce them at up to ˜[Nb5+]O and then increase after that, expecting the energy transfer between the Nb5+ and SDNA molecules. The current-voltage measurement shows a significant increase in the current observed as [Nb5+] increases in the SDNA thin films when compared to that of pristine SDNA thin films. Finally, we investigate the temperature dependent magnetization in which the Nb5+-doped SDNA thin films reveal weak ferromagnetism due to the existence of tiny magnetic dipoles in the Nb5+-doped SDNA

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

International Nuclear Information System (INIS)

Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

2014-01-01

Stable n-doping of WSe 2 using thin films of SiN x deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN x act to dope WSe 2 thin flakes n-type via field-induced effect. The electron concentration in WSe 2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN x through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe 2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe 2 n-MOSFETs with a mobility of ∼70 cm 2 /V s

Sulfation of ceria-zirconia model automotive emissions control catalysts

Science.gov (United States)

Nelson, Alan Edwin

Cerium-zirconium mixed metal oxides are used in automotive emissions control catalysts to regulate the partial pressure of oxygen near the catalyst surface. The near surface oxygen partial pressure is regulated through transfer of atomic oxygen from the ceria-zirconia solid matrix to the platinum group metals to form metal oxides capable of oxidizing carbon monoxide and unburned hydrocarbons. Although the addition of zirconium in the cubic lattice of ceria increases the oxygen storage capacity and thermal stability of the ceria matrix, the cerium-zirconium oxide system remains particularly susceptible to deactivation from sulfur compounds. While the overall effect of sulfur on these systems is understood (partially irreversible deactivation), the fundamental and molecular interaction of sulfur with ceria-zirconia remains a challenging problem. Ceria-zirconia metal oxide solid solutions have been prepared through co-precipitation with nitrate precursors. The prepared powders were calcined and subsequently formed into planer wafers and characterized for chemical and physical attributes. The prepared samples were subsequently exposed to a sulfur dioxide based environment and characterized with spectroscopic techniques to characterize the extent of sulfation and the nature of surface sulfur species. The extent of sulfation of the model ceria-zirconia systems was characterized with Auger electron spectroscopy (AES) prior to and after treatment in a microreactor. Strong dependencies were observed between the atomic ratio of ceria to zirconia and the extent of sulfation. In addition, the partial pressure of sulfur dioxide during treatments also correlated to the extent of sulfation, while temperature only slightly effected the extent of sulfation. The AES data suggests the gas phase sulfur dioxide preferentially chemisorbs on surface ceria atoms and the extent of sulfation is heavily dependent on sulfur dioxide concentrations and only slightly dependent on catalyst

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

Science.gov (United States)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

Science.gov (United States)

Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

2018-05-01

Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

Relationship Between Particle and Plasma Properties and Coating Characteristics of Samaria-Doped Ceria Prepared by Atmospheric Plasma Spraying for Use in Solid Oxide Fuel Cells

Science.gov (United States)

Cuglietta, Mark; Kesler, Olivera

2012-06-01

Samaria-doped ceria (SDC) has become a promising material for the fabrication of high-performance, intermediate-temperature solid oxide fuel cells (SOFCs). In this study, the in-flight characteristics, such as particle velocity and surface temperature, of spray-dried SDC agglomerates were measured and correlated to the resulting microstructures of SDC coatings fabricated using atmospheric plasma spraying, a manufacturing technique with the capability of producing full cells in minutes. Plasmas containing argon, nitrogen and hydrogen led to particle surface temperatures higher than those in plasmas containing only argon and nitrogen. A threshold temperature for the successful deposition of SDC on porous stainless steel substrates was calculated to be 2570 °C. Coating porosity was found to be linked to average particle temperature, suggesting that plasma conditions leading to lower particle temperatures may be most suitable for fabricating porous SOFC electrode layers.

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Influence of lithium doping on the structural and electrical characteristics of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Johny, T. Anto [Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani - PO, Thrissur, 680 581 Kerala (India); Kumar, Viswanathan, E-mail: vkumar10@yahoo.com [Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani - PO, Thrissur, 680 581 Kerala (India); Imai, Hideyuki; Kanno, Isaku [Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan)

2012-06-30

Thin films of undoped and lithium-doped Zinc oxide, (Zn{sub 1-x}Li{sub x})O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates [(111)Pt/Ti/SiO{sub 2}/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x {<=} 0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e{sub 31}{sup Low-Asterisk} has been determined for the thin films having the composition (Zn{sub 0.95}Li{sub 0.05})O, to study their suitability for piezoelectric applications. - Highlights: Black-Right-Pointing-Pointer Preferentially c-axis oriented (Zn{sub 1-x}Li{sub x})O films were spin-coated on glass. Black-Right-Pointing-Pointer (Zn{sub 1-x}Li{sub x})O thin films exhibit dense columnar microstructure. Black-Right-Pointing-Pointer Low levels of lithium doping, increases the electrical resistivity of ZnO thin films. Black-Right-Pointing-Pointer (Zn{sub 1-x}Li{sub x})O thin films show high values of transverse piezoelectric coefficient, e{sup Low-Asterisk }{sub 31}.

Preparation of manganese-doped ZnO thin films and their ...

Indian Academy of Sciences (India)

Various physical and chemical techniques that has been used to deposit Mn:ZnO thin films .... appearance and Mn-doped films were slightly brownish with a good adherence to the ..... shows a constantly decreasing trend with increasing man-.

Lanthanum gallate and ceria composite as electrolyte for solid oxide fuel cells

International Nuclear Information System (INIS)

Li Shuai; Li Zhicheng; Bergman, Bill

2010-01-01

The composite of doped lanthanum gallate (La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 2.85 , LSGM) and doped ceria (Ce 0.8 Sm 0.2 O 1.9 , CSO) was investigated as an electrolyte for solid oxide fuel cell (SOFC). The LSGM-CSO composite was examined by X-ray diffraction (XRD) and impedance spectroscopy. It was found that the sintered LSGM-CSO composite contains mainly fluorite CeO 2 phase and a minority impurity phase, Sm 3 Ga 5 O 12 . The LSGM-CSO composite electrolyte shows a small grain boundary response in the impedance spectroscopy as compared to LSGM and CSO pellets. The composite electrolyte exhibits the highest conductivity in the temperature range of 250-600 o C, compared to LSGM and CSO. The LSGM-CSO composite can be expected to be an attractive intermediate temperature electrolyte material for solid oxide fuel cells.

Morphology and the isoelectric point of nanosized aqueous ceria sols

Energy Technology Data Exchange (ETDEWEB)

Gulicovski, Jelena J. [The Vinča Institute of Nuclear Sciences, University of Belgrade, POB 522, 11001 Belgrade (Serbia); Bračko, Ines [Advanced Materials Department, Jozef Stefan Institute, Ljubljana (Slovenia); Milonjić, Slobodan K., E-mail: smiloni@vinca.rs [The Vinča Institute of Nuclear Sciences, University of Belgrade, POB 522, 11001 Belgrade (Serbia)

2014-12-15

Ceria sols were synthesized by a forced hydrolysis method using cerium sulphate or cerium nitrate as precursors. High-resolution TEM was used to determine the microstructure and particle size of CeO{sub 2}. A polycrystalline structure of ceria sols with crystallite sizes of 4.4 and 8.6 nm was obtained. The particles had a well-defined polyhedral shape. Direct bandgaps for ceria nanoparticles were 2.80 and 3.31 eV, respectively. The isoelectric point, pH{sub iep}, of ceria sols in KNO{sub 3} solutions was investigated. The isoelectric point of ceria was found to be pH{sub iep} = 7.6 ± 0.2. The obtained results indicate that the isoelectric point in the presence of SO{sub 4}{sup 2−} ions shifts to lower pH value. The particle size of ceria increases with pH, reaching the maximum value at pH{sub iep} as the result of agglomeration{sub .} - Highlights: • Ceria sols with cubic phase nanoparticles have been successfully synthesized. • The isoelectric point of ceria oxide in KNO{sub 3} solutions was p{sub Hiep} = 7.6 ± 0.2. • The specific adsorption of SO{sub 4}{sup 2−} ions causes a shift in IEP to lower pH (pH{sub iep} = 6.7). • The correlation between IEP and the maximum diameter of particles was observed.

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

Science.gov (United States)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

International Nuclear Information System (INIS)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

2011-01-01

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

2011-10-15

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

2016-11-30

Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

Novel ceria-polymer microcomposites for chemical mechanical polishing

International Nuclear Information System (INIS)

Coutinho, Cecil A.; Mudhivarthi, Subrahmanya R.; Kumar, Ashok; Gupta, Vinay K.

2008-01-01

Abrasive particles are key components in slurries for chemical mechanical polishing (CMP). Since the particle characteristics determine surface quality of wafers during polishing, in this research, novel abrasive composite particles have been developed. These composite particles contain nanoparticles of ceria dispersed within cross-linked, polymeric microspheres such that the average mass fraction of ceria is approximately 50% in the particles. The microspheres are formed by co-polymerization of N-isopropylacrylamide (NIPAM) with 3-(trimethoxysilyl)propyl methacrylate (MPS) and contain interpenetrating (IP) chains of poly(acrylic acid) (PAAc). Infrared spectroscopy, dynamic light scattering, and transmission electron microscopy are employed to characterize the composite particles. Planarization of silicon dioxide wafers is studied on a bench-top CMP tester and the polished surfaces are characterized by ellipsometry, atomic force and optical microscopy. Slurries formed from the composite ceria-polymer particles lead to lower topographical variations and surface roughness than slurries of only ceria nanoparticles even though both slurries achieve similar removal rates of ∼100 nm/min for similar ceria content. Polishing with the novel composite particles gives surfaces devoid of scratches and particle deposition, which makes these particles suitable for the next generation slurries in CMP

Novel ceria-polymer microcomposites for chemical mechanical polishing

Energy Technology Data Exchange (ETDEWEB)

Coutinho, Cecil A. [Department of Chemical and Biomedical Engineering, University of South Florida (United States); Mudhivarthi, Subrahmanya R.; Kumar, Ashok [Nanomaterials and Nanomanufacturing Research Center, University of South Florida (United States); Department of Mechanical Engineering, University of South Florida (United States); Gupta, Vinay K. [Department of Chemical and Biomedical Engineering, University of South Florida (United States)], E-mail: vkgupta@eng.usf.edu

2008-12-30

Abrasive particles are key components in slurries for chemical mechanical polishing (CMP). Since the particle characteristics determine surface quality of wafers during polishing, in this research, novel abrasive composite particles have been developed. These composite particles contain nanoparticles of ceria dispersed within cross-linked, polymeric microspheres such that the average mass fraction of ceria is approximately 50% in the particles. The microspheres are formed by co-polymerization of N-isopropylacrylamide (NIPAM) with 3-(trimethoxysilyl)propyl methacrylate (MPS) and contain interpenetrating (IP) chains of poly(acrylic acid) (PAAc). Infrared spectroscopy, dynamic light scattering, and transmission electron microscopy are employed to characterize the composite particles. Planarization of silicon dioxide wafers is studied on a bench-top CMP tester and the polished surfaces are characterized by ellipsometry, atomic force and optical microscopy. Slurries formed from the composite ceria-polymer particles lead to lower topographical variations and surface roughness than slurries of only ceria nanoparticles even though both slurries achieve similar removal rates of {approx}100 nm/min for similar ceria content. Polishing with the novel composite particles gives surfaces devoid of scratches and particle deposition, which makes these particles suitable for the next generation slurries in CMP.

Lung deposition and extrapulmonary translocation of nano-ceria after intratracheal instillation

International Nuclear Information System (INIS)

He Xiao; Zhang Haifeng; Ma Yuhui; Bai Wei; Zhang Zhiyong; Ding Yayun; Zhao Yuliang; Chai Zhifang; Lu Kai

2010-01-01

The broad potential applications of manufactured nanomaterials call for urgent assessment of their environmental and biological safety. However, most of the previous work focused on the cell level performance; little was known about the consequences of nanomaterial exposure at the whole-body and organ levels. In the present paper, the radiotracer technique was employed to study the pulmonary deposition and the translocation to secondary target organs after ceria nanoparticles (nano-ceria) were intratracheally instilled into Wistar rats. It was found that 63.9 ± 8.2% of the instilled nano-ceria remained in the lung by 28 d postexposure and the elimination half-life was 103 d. At the end of the test period, only 1/8-1/3 of the daily elimination of nano-ceria from the lung was cleared via the gastrointestinal tract, suggesting that phagocytosis by alveolar macrophages (AMs) with subsequent removal towards the larynx was no longer the predominant route for the elimination of nano-ceria from the lung. The whole-body redistribution of nano-ceria demonstrated that the deposited nano-ceria could penetrate through the alveolar wall into the systemic circulation and accumulate in the extrapulmonary organs. In vitro study suggested that nano-ceria would agglomerate and form sediments in the bronchoalveolar aqueous surrounding while binding to protein would be conducive to the redispersion of nano-ceria. The decrease in the size of agglomerates might enhance the penetration of nano-ceria into the systemic circulation. Our findings suggested that the effect of nanomaterial exposure, even at low concentration, should be assessed because of the potential lung and systemic cumulative toxicity of the nanomaterials.

Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

Science.gov (United States)

Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

2017-03-01

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

Structural Characteristics of Bimetallic Catalysts Supported on Nano-Ceria

Directory of Open Access Journals (Sweden)

J. F. Bozeman

2011-01-01

Full Text Available Cu-Pt bimetal catalysts supported on nanocrystalline CeO2 (nano-ceria are synthesized via the low-cost sol-gel approach followed by impregnation processing. The average particle size of the catalytic composites is 63 nm. Ceria nanopowders sequentially impregnated in copper solution and then in Pt solution transformed into Pt-skin-structured Cu-Pt/ceria nanocomposite, based on the surface elemental and bulk compositional analyses. The ceria supporter has a fluorite structure, but the structure of Cu and Pt catalytic contents, not detected by X-ray diffraction spectroscopy due to the low loading level, is yet conclusive. The bimetallic catalytic nanocomposites may potentially serve as sulfur-tolerant anode in solid oxide fuel cells.

Ceria-based electrospun fibers for renewable fuel production via two-step thermal redox cycles for carbon dioxide splitting.

Science.gov (United States)

Gibbons, William T; Venstrom, Luke J; De Smith, Robert M; Davidson, Jane H; Jackson, Gregory S

2014-07-21

Zirconium-doped ceria (Ce(1-x)Zr(x)O2) was synthesized through a controlled electrospinning process as a promising approach to cost-effective, sinter-resistant material structures for high-temperature, solar-driven thermochemical redox cycles. To approximate a two-step redox cycle for solar fuel production, fibrous Ce(1-x)Zr(x)O2 with relatively low levels of Zr-doping (0 rates of O2 release during reduction and CO production during reoxidation and by assessing post-cycling fiber crystallite sizes and surface areas. Sintering increases with reduction temperature but occurs primarily along the fiber axes. Even after 108 redox cycles with reduction at 1400 °C and oxidation with CO2 at 800 °C, the fibers maintain their structure with surface areas of ∼0.3 m(2) g(-1), higher than those observed in the literature for other ceria-based structures operating at similarly high temperature conditions. Total CO production and peak production rate stabilize above 3.0 mL g(-1) and 13.0 mL min(-1) g(-1), respectively. The results show the potential for electrospun oxides as sinter-resistant material structures with adequate surface area to support rapid CO2 splitting in solar thermochemical redox cycles.

Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Zhang, Pengwei; Tian, Xinlong; Cheng, Guo; Xie, Yinghao; Zhang, Huangchu; Zeng, Xiangfu; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2013-01-01

Highlights: •F and Sn co-doped ZnO thin films were synthesized by sol–gel method. •The effects of different F doping concentrations were investigated. •The co-doped nanocrystals exhibit good crystal quality. •The origin of the photoluminescence emissions was discussed. •The films showed high transmittance and low resistivity. -- Abstract: Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1 × 10 −3 Ω cm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn 2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration

Platinum/ceria/alumina catalysts on microstructures for carbon monoxide conversion

Energy Technology Data Exchange (ETDEWEB)

Germani, G.; Schuurman, Y.; Mirodatos, C. [Institut de Recherches sur la Catalyse, CNRS, 2 Avenue Albert Einstein, 69626 Villeurbanne (France); Alphonse, P.; Courty, M. [CIRIMAT, UMR-CNRS 5085, Universite Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex 04 (France)

2005-12-15

Platinum/ceria/alumina catalysts have been prepared by a sol-gel method and coated in the microchannels of stainless steel platelets. These catalysts are very active for the water-gas shift reaction between 300 and 400{sup o}C. Moreover, they are non-pyrophoric and thus well suited for the purification of hydrogen for PEM fuel cells. The obtained coatings show good adherence and catalytic activity. The influence of the amount of platinum and ceria as well as the effect of a binder on the catalytic performance has been investigated. The samples have been characterized before reaction by XRD, SEM and by N{sub 2} adsorption measurements. The kinetics, free from internal diffusion limitations, over these thin films have been described by a power law rate equation. An activation energy of 86kJ/mol has been found and at 260{sup o}C the TOF corresponds to 0.6+/-0.1s{sup -1} for all investigated samples. The superior activity of the platelets compared to the powder samples is attributed to the diffusion limitations inside the powder pellets. Thus catalysts deposited on microstructured platelets lead to a better platinum utilization.

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Directory of Open Access Journals (Sweden)

Gurpreet Kaur

2015-02-01

Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

Science.gov (United States)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Pyroelectricity of silicon-doped hafnium oxide thin films

Science.gov (United States)

Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

2018-04-01

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

2012-10-01

Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

Methylene blue photocatalytic mineralization under visible irradiation on TiO{sub 2} thin films doped with chromium

Energy Technology Data Exchange (ETDEWEB)

Diaz-Uribe, Carlos; Vallejo, William, E-mail: williamvallejo@mail.uniatlantico.edu.co; Ramos, Wilkendry

2014-11-15

Graphical abstract: - Highlights: • We used an easy and inexpensive technique to dope thin films of TiO{sub 2}. • We proved that hydroxyl radicals were generated under visible light irradiation by Cr:TiO{sub 2}. • We used a Haber–Weiss reaction through Cr:TiO{sub 2} catalyst to improve the photo-mineralization process. - Abstract: We studied changes in structural, optical and photocatalytic properties of TiO{sub 2} thin films due to doping process with chromium. Powders of undoped TiO{sub 2} and chromium-doped TiO{sub 2} (Cr:TiO{sub 2}) were synthesized by sol–gel method and, thin films were deposited by doctor blade method. The properties of the thin films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR) and diffuse reflectance. The XRD patterns indicated that doping process changed the crystalline phases radio of TiO{sub 2} thin films, furthermore, the optical analysis showed that band gap value of Cr:TiO{sub 2} thin films was 31% fewer than undoped TiO{sub 2} thin films. Along, Langmuir–Hinshelwood model was used to obtain kinetic information of the photo-mineralization process; results indicated that photocatalytic activity of Cr:TiO{sub 2} thin films were four times better than undoped TiO{sub 2} thin films; finally the synergic effect was tested by addition of the H{sub 2}O{sub 2}, photocatalytic yield was improved from 26% to 61% when methylene blue photo-mineralization was assisted with slightly amount of H{sub 2}O{sub 2}.

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

Directory of Open Access Journals (Sweden)

Xiaoyu Bi

2018-02-01

Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: → DLC thin films were deposited on Si substrates via dc magnetron sputtering. → Some DLC films were doped with N and/or Pt/Ru. → The film corrosion behavior was studied in a Hank solution with polarization test. → The PtRu-DLC film showed the highest corrosion potential among the films studied.

Structural and photodegradation behaviors of Fe{sup 3+}-doping TiO{sub 2} thin films prepared by a sol–gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Lin, Huey-Jiuan; Yang, Tien-Syh [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80782, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2014-10-15

Highlights: • Pure and various Fe{sup 3+}-doped TiO{sub 2} thin films have been successfully fabricated. • The phase of all thin films was single phase of anatase TiO{sub 2} when calcined at 823 K. • The crystallinity of TiO{sub 2} thin films decreased as Fe{sup 3+}-doping increased. • The photodegradation of each sample increased as the irradiation time increased. • The photodegradation increased as Fe{sup 3+}-doping increased at a fixed irradiation time. - Abstract: Pure and various Fe{sup 3+}-doping TiO{sub 2} thin films have been successfully fabricated on glass substrate prepared by a sol–gel spin coating route. The structural and photodegradation behavior of these films after calcined at various temperatures for 1 h were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrum and degradation of 1.0 × 10{sup −5} M methylene blue solution. When all thin films after calcined at 823 K for 1 h, the crystalline phase are comprised only contained single phase of anatase TiO{sub 2}. The crystallinity of various Fe{sup 3+}-doping TiO{sub 2} thin films decreases with Fe{sup 3+}-doping concentration increased. The PL intensity of all thin films also decreases with Fe{sup 3+}-doping concentration increased. When all various Fe{sup 3+}-doping TiO{sub 2} thin films after calcined at 823 K for 1 h, the photodegradation of each sample increases with irradiation time increased. Moreover, the photodegradation also increases with Fe{sup 3+}-doping concentration increased when fixed at constant irradiation time.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Photovoltaic properties of in-doped CDTE thin films deposited on metallic substrates

International Nuclear Information System (INIS)

Wagah F Mohamad; Khalid K Mohammed

2006-01-01

CDTE is a promising photovoltaic material due to its nearly optimum band gap and high optical absorption coefficient. This study looks into the effect of indium doping of the CdTe thin film deposited on stainless steel substrate. The conventional cells are usually manufactured on glass substrate and offer no weight advantage over single crystal cells. Since the metal foil support can be as thin as (40-60) μm and the weight saving is significant. The spectral response of the photo current with and without indium doping was studied in detail and compared with theory. The sub gap response of the resulted structure is particularly strong and extends to wavelengths up to 1000 nm

Singler-chamber SOFCs based on gadolinia doped ceria operated on methane and propane; Pilas de combustible de una sola camara, basadas en electrolitos de ceria dopada con gadolinia y operadas con metano y propano

Energy Technology Data Exchange (ETDEWEB)

Morales, M.; Roa, J. J.; Capdevila, X. G.; Segarra, M.; Pinol, S.

2010-07-01

The main advantages of single-chamber solid oxide fuel cells (SOFCs) respect to dual-chamber SOFCs, are to simplify the device design and to operate in mixtures of hydrocarbon (methane, propane...) and air, with no separation between fuel and oxidant. However, this design requires the use of selective electrodes for the fuel oxidation and the oxidant reduction. In this work, electrolyte-supported SOFCs were fabricated using gadolinia doped ceria (GDC) as the electrolyte, Ni + GDC as the anode and LSC(La{sub 0}.5Sr{sub 0}.5CoO{sub 3}-{delta})-GDC-Ag{sub 2}O as the cathode. The electrical properties of the cell were determined in mixtures of methane + air and propane + air. The influence of temperature, gas composition and total flow rate on the fuel cell performance was investigated. As a result, the power density was strongly increased with increasing temperature, total flow rate and hydrocarbon composition. Under optimized gas compositions and total flow conditions, power densities of 70 and 320 mW/cm{sup 2} operating on propane at a temperature of 600 degree centigrade and methane (795 degree centigrade) were obtained, respectively. (Author)

Structural, morphological and optical properties of Na and K dual doped CdS thin film

International Nuclear Information System (INIS)

Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

2012-01-01

Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

Science.gov (United States)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

National Research Council Canada - National Science Library

Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

2002-01-01

The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

Lanthanum gallate and ceria composite as electrolyte for solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Li Shuai, E-mail: shuail@kth.s [Department of Materials Science and Engineering, School of Industrial Engineering and Management, Royal Institute of Technology, SE 10044 Stockholm (Sweden); Li Zhicheng [School of Materials Science and Engineering, Central South University, 410083 Changsha, Hunan (China); Bergman, Bill [Department of Materials Science and Engineering, School of Industrial Engineering and Management, Royal Institute of Technology, SE 10044 Stockholm (Sweden)

2010-03-04

The composite of doped lanthanum gallate (La{sub 0.9}Sr{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 2.85}, LSGM) and doped ceria (Ce{sub 0.8}Sm{sub 0.2}O{sub 1.9}, CSO) was investigated as an electrolyte for solid oxide fuel cell (SOFC). The LSGM-CSO composite was examined by X-ray diffraction (XRD) and impedance spectroscopy. It was found that the sintered LSGM-CSO composite contains mainly fluorite CeO{sub 2} phase and a minority impurity phase, Sm{sub 3}Ga{sub 5}O{sub 12}. The LSGM-CSO composite electrolyte shows a small grain boundary response in the impedance spectroscopy as compared to LSGM and CSO pellets. The composite electrolyte exhibits the highest conductivity in the temperature range of 250-600 {sup o}C, compared to LSGM and CSO. The LSGM-CSO composite can be expected to be an attractive intermediate temperature electrolyte material for solid oxide fuel cells.

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

International Nuclear Information System (INIS)

Nazir, Adnan; Toma, Andrea; Shah, Nazar Abbas; Panaro, Simone; Butt, Sajid; Sagar, Rizwan ur Rehman; Raja, Waseem; Rasool, Kamran; Maqsood, Asghari

2014-01-01

Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10 6 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10 3 Ω cm) against a 20% cut in optical transmission

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Influence of annealing on texture properties of cerium oxide thin films

International Nuclear Information System (INIS)

Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

2013-01-01

Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

Improved electrochromical properties of sol-gel WO3 thin films by doping gold nanocrystals

International Nuclear Information System (INIS)

Naseri, N.; Azimirad, R.; Akhavan, O.; Moshfegh, A.Z.

2010-01-01

In this investigation, the effect of gold nanocrystals on the electrochromical properties of sol-gel Au doped WO 3 thin films has been studied. The Au-WO 3 thin films were dip-coated on both glass and indium tin oxide coated conducting glass substrates with various gold concentrations of 0, 3.2 and 6.4 mol%. Optical properties of the samples were studied by UV-visible spectrophotometry in a range of 300-1100 nm. The optical density spectra of the films showed the formation of gold nanoparticles in the films. The optical bandgap energy of Au-WO 3 films decreased with increasing the Au concentration. Crystalline structure of the doped films was investigated by X-ray diffractometry, which indicated formation of gold nanocrystals in amorphous WO 3 thin films. X-ray photoelectron spectroscopy (XPS) was used to study the surface chemical composition of the samples. XPS analysis indicated the presence of gold in metallic state and the formation of stoichiometric WO 3 . The electrochromic properties of the Au-WO 3 samples were also characterized using lithium-based electrolyte. It was found that doping of Au nanocrystals in WO 3 thin films improved the coloration time of the layer. In addition, it was shown that variation of Au concentration led to color change in the colored state of the Au-WO 3 thin films.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

Science.gov (United States)

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

2012-01-01

Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

Science.gov (United States)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

I. Saurdi

2014-01-01

Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

Surface coating of ceria nanostructures for high-temperature oxidation protection

Science.gov (United States)

Aadhavan, R.; Bhanuchandar, S.; Babu, K. Suresh

2018-04-01

Stainless steels are used in high-temperature structural applications but suffer from degradation at an elevated temperature of operation due to thermal stress which leads to spallation. Ceria coating over chromium containing alloys induces protective chromia layer formation at alloy/ceria interface thereby preventing oxidative degradation. In the present work, three metals of differing elemental composition, namely, AISI 304, AISI 410, and Inconel 600 were tested for high-temperature stability in the presence and absence of ceria coating. Nanoceria was used as the target to deposit the coating through electron beam physical vapor deposition method. After isothermal oxidation at 1243 K for 24 h, Ceria coated AISI 304 and Inconel 600 exhibited a reduced rate of oxidation by 4 and 1 orders, respectively, in comparison with the base alloy. The formation of spinel structure was found to be lowered in the presence of ceria due to the reduced migration of cations from the alloy.

Nanostructured nickel doped β-V{sub 2}O{sub 5} thin films for supercapacitor applications

Energy Technology Data Exchange (ETDEWEB)

Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S. [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India); Purushothaman, K.K. [Department of Physics, TRP Engineering College, Trichy (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India)

2013-07-15

Graphical abstract: - Highlights: • Nanorod with pores has been observed for 5 wt.% nickel doped β-V{sub 2}O{sub 5} thin films. • Film with 5 wt.% of nickel exhibits a specific capacitance of 417 F g{sup −1}. • These films exhibit high energy density. • The charge transfer resistance is 103 Ω. - Abstract: Interesting thin film electrodes of nickel doped vanadium pentoxide with different levels of doping (2.5–10 wt.%) are prepared on FTO and glass substrate at 300 °C using sol–gel spin coating method. The structural and morphological studies are made to understand the nature of the surface of the thin films. The electrochemical characteristics have been investigated through cyclic voltammetry and ac impedance spectroscopy measurements. The doping of nickel with β-V{sub 2}O{sub 5} has led to enhanced intercalation and deintercalation of ions. β-V{sub 2}O{sub 5} films with 5 wt.% of Ni exhibit the maximum specific capacitance of 417 F/g at a scan rate of 5 mV/s, with a good cyclic stability making it a promising candidate for supercapacitor application.

Crystallographic Investigation of Ag (4 mol%) Doped ZnO (SZO) Thin Films by XRD

International Nuclear Information System (INIS)

Lwin Lwin Nwe; Sandar Dwe; Khant Khant Lin; Khin Thuzar; Than Than Win; Ko Ko Kyaw Soe

2008-03-01

Silver doped ZnO(SZO) thin films are prepared by sol-based method. The silver dopant concentration is 4 mol % in this case. XRD analysis carried out to determine, crystallographic properties such as lattice parameters and crystallite size of SZO thin films.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

Science.gov (United States)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

2015-11-25

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

2018-04-01

Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Aravind, Arun, E-mail: aruncusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Kumar, Mukesh; Chandra, Ramesh [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247 667, Uttarakhand (India)

2012-08-01

Highlights: Black-Right-Pointing-Pointer Defect induced Raman active modes in Mn doped ZnO thin films. Black-Right-Pointing-Pointer Room temperature ferromagnetism. Black-Right-Pointing-Pointer Morphological variations of ZnO thin films with Mn doping. Black-Right-Pointing-Pointer Variation of refractive index of ZnO thin films with Mn doping. - Abstract: Zn{sub 1-x}Mn{sub x}O thin films were grown by pulsed laser deposition. The phase purity and the structure were confirmed by X-ray diffraction studies. The films have a transmittance more than 80% in the visible region. The refractive index of Zn{sub 0.90}Mn{sub 0.10}O films is found to be 1.77 at 550 nm. The presence of non-polar E{sub 2}{sup high} and E{sub 2}{sup low} Raman modes in thin films indicates that 'Mn' doping does not change the wurtzite structure of ZnO. Apart from the normal modes of ZnO the Zn{sub 1-x}Mn{sub x}O ceramic targets show two additional modes at 332 cm{sup -1} (I{sub 1}) and 524 cm{sup -1} (I{sub 2}). The broad Raman peaks (340-600 cm{sup -1}) observed Zn{sub 0.90}Mn{sub 0.10}O thin films can be deconvoluted into five peaks, denoted as P{sub 1}-P{sub 5}. The possible origins of Raman peaks in Zn{sub 1-x}Mn{sub x}O films are the structural disorder and morphological change caused by the Mn dopant. The B{sub 1}{sup low}, {sup 2}B{sub 1}{sup low}, B{sub 1}{sup high} and A{sub 1}{sup LO} modes as well as the surface phonon mode have been observed in heavily Mn-doped ZnO films. Zn{sub 0.98}Mn{sub 0.02}O thin film shows room temperature ferromagnetism. The saturation magnetic moment of the Zn{sub 0.98}Mn{sub 0.02}O thin film is 0.42{mu}{sub B}/Mn atom. The undoped ZnO film prepared under the same condition shows diamagnetic nature. At higher doping concentrations the formation of Mn clusters suppress the room temperature ferromagnetism in Zn{sub 1-x}Mn{sub x}O thin films and shows paramagnetism. XPS confirms the incorporation of Mn{sup 2+} into the ZnO lattice.

Evaluation of the Antimicrobial Activity of Different Antibiotics Enhanced with Silver-Doped Hydroxyapatite Thin Films

Directory of Open Access Journals (Sweden)

Daniela Predoi

2016-09-01

Full Text Available The inhibitory and antimicrobial effects of silver particles have been known since ancient times. In the last few years, a major health problem has arisen due to pathogenic bacteria resistance to antimicrobial agents. The antibacterial activities of new materials including hydroxyapatite (HAp, silver-doped hydroxyapatite (Ag:HAp and various types of antibiotics such as tetracycline (T-HAp and T-Ag:HAp or ciprofloxacin (C-HAp and C-Ag:HAp have not been studied so far. In this study we reported, for the first time, the preparation and characterization of various thin films based on hydroxyapatite and silver-doped hydroxyapatite combined with tetracycline or ciprofloxacin. The structural and chemical characterization of hydroxyapatite and silver-doped hydroxyapatite thin films has been evaluated by X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FTIR. The morphological studies of the HAp, Ag:HAp, T-HAp, T-Ag:HAp, C-HAp and C-Ag:HAp thin solid films were performed using scanning electron microscopy (SEM. In order to study the chemical composition of the coatings, energy dispersive X-ray analysis (EDX and glow discharge optical emission spectroscopy (GDOES measurements have been used, obtaining information on the distribution of the elements throughout the film. These studies have confirmed the purity of the prepared hydroxyapatite and silver-doped hydroxyapatite thin films obtained from composite targets containing Ca10−xAgx(PO46(OH2 with xAg = 0 (HAp and xAg = 0.2 (Ag:HAp. On the other hand, the major aim of this study was the evaluation of the antibacterial activities of ciprofloxacin and tetracycline in the presence of HAp and Ag:HAp thin layers against Staphylococcus aureus and Escherichia coli strains. The antibacterial activities of ciprofloxacin and tetracycline against Staphylococcus aureus and Escherichia coli test strains increased in the presence of HAp and Ag:HAp thin layers.

Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films

International Nuclear Information System (INIS)

Mhamdi, A.; Mimouni, R.; Amlouk, A.; Amlouk, M.; Belgacem, S.

2014-01-01

Highlights: • The sprayed Cu-doped ZnO thin layers films were well crystallised in hexagonal wurtzite phase. • Nanoncrystallites on clusters were observed whose density decreases especially at 2% Cu content. • This parallel circuit R–C represents the contribution of the grain boundaries delineating the oriented columnar microcrystallites along c-axis. - Abstract: Copper-doped zinc oxide thin films (ZnO:Cu) at different percentages (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Cu concentration on the structural, morphology and optical properties of the ZnO:Cu thin films were investigated. XRD analysis revealed that all films consist of single phase ZnO and were well crystallised in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. The Film surface was analyzed by contact atomic force microscopy (AFM) in order to understand the effect of the doping on the surface structure. Doping by copper resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin layers. Finally, all results have been discussed in terms of the copper doping concentration

Influence of ceria on the thermally durability of Pt/Rh automotive catalyst

International Nuclear Information System (INIS)

Muraki, H.; Zhang, G.

1998-01-01

Full text: The use of cerium oxide as an oxygen storage component in automotive three-way catalysts has been well established. More recently the requirement of the three-way catalysts against the increase of the severity in emission standards has focused attention on the development of more active, durable catalysts. The thermally durability of Pt/Rh catalyst can be achieved by the utilization of thermally stable ceria as well as optimization of washcoat composition and structure in order to control the extent of interaction between PGM and ceria. In the present paper, we describe the influence of newly developed washcoat components and PGM interaction with ceria on catalytic performance. First, to clear that the interaction between PGM and ceria contributes to catalytic performance, several kinds of catalysts which have the varied interactions between PGM and ceria were prepared using engineered washcoat techniques and evaluated in the model gas reactor. It was obvious that the difference in performance among them after aging derived from a diversity of interactions between Pt, Rh, and ceria. Second, for the purpose of determining the thermally durability of the developed Pt/Rh catalyst, the catalysts including the current catalyst were aged under three different temperatures and evaluated on engine dynamometer. Result of engine dynamometer evaluation revealed that significant improvement in the thermal durability can be achieved by optimizing the PGM-ceria interaction. In conclusion, we recognize that a thermal durability of a three-way catalyst can be improved by the stabilization of proper PGM-ceria interaction after aging as well as the utilization of thermally durable ceria material

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

2016-08-15

Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

Rendering photoreactivity to ceria. The role of defects

Energy Technology Data Exchange (ETDEWEB)

Yang, Chengwu; Yu, Xiaojuan; Heissler, Stefan; Weidler, Peter G.; Nefedov, Alexei; Wang, Yuemin; Woell, Christof [Institute of Functional Interfaces, IFG, Karlsruhe Institute of Technology - KIT, Eggenstein-Leopoldshafen (Germany); Plessow, Philipp N.; Studt, Felix [Institute of Catalysis Research and Technology, IKFT, Karlsruhe Institute of Technology - KIT, Eggenstein-Leopoldshafen (Germany)

2017-11-06

The photoreactivity of ceria, a photochemically inert oxide with a large band gap, can be increased to competitive values by introducing defects. This previously unexplained phenomenon has been investigated by monitoring the UV-induced decomposition of N{sub 2}O on well-defined single crystals of ceria by using infrared reflection-absorption spectroscopy (IRRAS). The IRRAS data, in conjunction with theory, provide direct evidence that reducing the ceria(110) surface yields high photoreactivity. No such effects are seen on the (111) surface. The low-temperature photodecomposition of N{sub 2}O occurs at surface O vacancies on the (110) surface, where the electron-rich cerium cations with a significantly lowered coordination number cause a local lowering of the huge band gap (ca. 6 eV). The quantum efficiency of strongly reduced ceria(110) surfaces in the photodecomposition of N{sub 2}O amounts to 0.03 %, and is thus comparable to that reported for the photooxidation of CO on rutile TiO{sub 2}(110). (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fuel cells with doped lanthanum gallate electrolyte

Science.gov (United States)

Feng, Man; Goodenough, John B.; Huang, Keqin; Milliken, Christopher

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800°C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800°C was achieved. our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum galiate and achieve higher power density at 800°C from solid oxide fuel cells.

Fuel cells with doped lanthanum gallate electrolyte

Energy Technology Data Exchange (ETDEWEB)

Feng Man [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Goodenough, J.B. [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Huang Keqin [Texas Univ., Austin, TX (United States). Center for Materials Science and Engineering; Milliken, C. [Cerematec, Inc., Salt Lake City, UT (United States)

1996-11-01

Single cells with doped lanthanum gallate electrolyte material were constructed and tested from 600 to 800 C. Both ceria and the electrolyte material were mixed with NiO powder respectively to form composite anodes. Doped lanthanum cobaltite was used exclusively as the cathode material. While high power density from the solid oxide fuel cells at 800 C was achieved, our results clearly indicate that anode overpotential is the dominant factor in the power loss of the cells. Better anode materials and anode processing methods need to be found to fully utilize the high ionic conductivity of the doped lanthanum gallate and achieve higher power density at 800 C from solid oxide fuel cells. (orig.)

The pH-dependant attachment of ceria nanoparticles to silica using surface analytical techniques

International Nuclear Information System (INIS)

Dawkins, K.; Rudyk, B.W.; Xu, Z.; Cadien, K.

2015-01-01

Graphical abstract: - Highlights: • A model for interaction between ceria nanoparticles and silica surfaces is proposed. • Proposed model investigated using zeta potential measurements and XPS. • Surface contamination is minimized at higher slurry pH levels. • High-resolution Ce 3d XPS and surface composition measured at different pH levels. • Variations in ceria contamination on silica surfaces via SEM and AES are studied. - Abstract: The adhesion and removal of ceria particles to a silica surface was investigated with the use of X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and auger electron spectroscopy (AES) measurements. A model is presented based on electrophoretic mobility measurements of ceria slurry and silica particles at different pH's. XPS results show that at acidic pH values, ceria is present on silica surfaces, but at alkaline pH values, far less ceria is present, or no ceria is present in the extreme case. SEM results corroborated the XPS results showing uniform distribution of ceria particles on silica surface at pH 6 while a clean silica surface is observed at pH 12. However, SEM images show agglomeration of ceria particles occurring at the isoelectric point of ceria at ∼pH 9.6. High resolution Ce 3d XPS analysis indicates that ceria present on the surface is composed ∼31% Ce(III) and ∼69% Ce(IV). AES mapping done at specific points on the silica surface validated both XPS and SEM results. Based on XPS, SEM and AES analyses, it is clear that an alkaline pH is necessary to minimize particulate contamination of silica surface by ceria

Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Matsubara, M.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2004-01-01

The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga 2 O 3 content ZnO target

Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

KAUST Repository

Han, Yang

2018-03-13

Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

KAUST Repository

Han, Yang; Fei, Zhuping; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D.; Heeney, Martin

2018-01-01

Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

Enhanced Intermediate-Temperature CO2 Splitting Using Nonstoichiometric Ceria and Ceria-Zirconia

KAUST Repository

Zhao, Zhenlong; Uddi, Mruthunjaya; Tsvetkov, Nikolai; Yildiz, Bilge; Ghoniem, Ahmed F.

2017-01-01

CO2 splitting via thermo-chemical or reactive redox has emerged as a novel and promising carbon-neutral energy solution. Its performance depends critically on the properties of the oxygen carriers (OC). Ceria is recognized as one of the most

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Science.gov (United States)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

International Nuclear Information System (INIS)

Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

2013-01-01

In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

Effect of Ag doping on the properties of ZnO thin films for UV stimulated emission

Science.gov (United States)

Razeen, Ahmed S.; Gadallah, A.-S.; El-Nahass, M. M.

2018-06-01

Ag doped ZnO thin films have been prepared using sol-gel spin coating method, with different doping concentrations. Structural and morphological properties of the films have been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Thin films have been optically pumped and stimulated emission has been observed with strong peaks in the UV region. The UV stimulated emission is found to be due to exciton-exciton scattering, and Ag doping promoted this process by increasing the excitons concentrations in the ZnO lattice. Output-input intensity relation and peak emission, FWHM, and quantum efficiency relations with pump intensity have been reported. The threshold for which stimulated emission started has been evaluated to be about 18 MW/cm2 with quantum efficiency of about 58.7%. Mechanisms explaining the role of Ag in enhancement of stimulated emission from ZnO thin films have been proposed.

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W.; Liu, E., E-mail: MEJLiu@ntu.edu.sg

2011-10-10

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: {yields} DLC thin films were deposited on Si substrates via dc magnetron sputtering. {yields} Some DLC films were doped with N and/or Pt/Ru. {yields} The film corrosion behavior was studied in a Hank solution with polarization test. {yields} The PtRu-DLC film showed the highest corrosion potential among the films studied.

Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

Directory of Open Access Journals (Sweden)

K. Durga Venkata Prasad

2016-07-01

Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

International Nuclear Information System (INIS)

Ray, Sekhar C.; Pong, W.F.; Papakonstantinou, P.

2016-01-01

The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp"3 network to sp"2 as evidenced by an increase of the sp"2 cluster and I_D/I_G ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp"2 cluster and I_D/I_G ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp"3-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp"3 and sp"2 contents are estimated from C K-edge XANES and VB-PES measurements.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

2011-01-01

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

2016-02-29

In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

Exploration of Al-Doped ZnO in Photovoltaic Thin Films

Science.gov (United States)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

Preparation of SDC electrolyte thin films on dense and porous substrates by modified sol-gel route

International Nuclear Information System (INIS)

Lin Hongfei; Ding, Changsheng; Sato, Kazuhisa; Tsutai, Yoshifumi; Ohtaki, Hiromichi; Iguchi, Mabito; Wada, Chiharu; Hashida, Toshiyuki

2008-01-01

Nanocrystalline fluorite type samarium doped ceria (SDC) electrolyte thin film for intermediate temperature-solid oxide fuel cells (IT-SOFCs) application were prepared on the dense and porous substrates at low temperatures of 573-1373 K using a novel citrate sol-gel route combined with a sol suspension spray coating technique. Thermogravimetric analysis showed that the decomposition of the citrate gel film and the initial crystallization of the SDC occurred at a low temperature of about 590 K. XRD examination revealed that the annealing of the green film at temperatures of 573-1373 K provided cubic nanocrystalline SDC phase. The crystallite sizes were in the range of 9-19 nm. Microscopic observations indicated that the derived film was homogeneous, dense and crack-free without pinholes. The desired thickness for preparation of thin electrolyte films from hundreds of nm to several μm should be controllable and feasible by repeating the simple and inexpensive citrate sol-gel spray coating process

Ceria powders by homogeneous precipitation technique

International Nuclear Information System (INIS)

Ramanathan, S.; Roy, S.K.

2003-01-01

Formation of precursors for ceria by two homogeneous precipitation reactions - (cerium chloride + urea at 95 degC - called reaction A and cerium chloride + hexamethylenetetramine at 85 degC - called reaction B) - has been studied. The variation of size of the colloidal particles formed and the zeta potential of the suspensions with progress of reactions exhibited similar trends for both the precipitation processes. Particle size increased from 100 to 300 nm with increasing temperature and extent of reaction. The zeta potential was found to decrease with increasing extent of precipitation in the pH range of 5 to 7. Filtration and drying led to agglomeration of the fine particles in case of the precursor from reaction B. The as-formed precursors were crystalline - a basic carbonate in case of reaction A and hydrous oxide in case of reaction B. It was found that nano-crystalline ceria powders (average crystallite size -10 nm) formed above 400 degC from both these precursors. The agglomerate size (D50) of the precursors and ceria powders formed after calcination at 600 degC varied from 0.7 to 3 μm. Increasing calcination temperature up to 800 degC, increased the crystallite size (50 nm). The zeta potential variation with pH and concentration of an anionic dispersant (Calgon) for the ceria powders formed was studied to determine the ideal conditions for suspension stability. It was found to be maximum (i.e., the suspensions stable) in the pH range of 3 to 4 or Calgon concentration of 0.01 to 0.1 weight percent. (author)

Sulfur poisoning of Ni/Gadolinium-doped ceria anodes: A long-term study outlining stable solid oxide fuel cell operation

Science.gov (United States)

Riegraf, Matthias; Zekri, Atef; Knipper, Martin; Costa, Rémi; Schiller, Günter; Friedrich, K. Andreas

2018-03-01

This work presents an analysis of the long-term behavior of nickel/gadolinium-doped ceria (CGO) anode-based solid oxide fuel cells (SOFC) under sulfur poisoning conditions. A parameter study of sulfur-induced irreversible long-term degradation of commercial, high-performance single cells was carried out at 900 °C for different H2/N2/H2S fuel gas atmospheres, current densities and Ni/CGO anodes. The poisoning periods of the cells varied from 200 to 1500 h. The possibility of stable long-term Ni/CGO anode operation under sulfur exposure is established and the critical operating regime is outlined. Depending on the operating conditions, two degradation phenomena can be observed. Small degradation of the ohmic resistance was witnessed for sulfur exposure times of approximately 1000 h. Moreover, degradation of the anode charge transfer resistance was observed to be triggered by the combination of a small anodic potential step and high sulfur coverage on Ni. The microstructural evolution of altered Ni/CGO anodes was examined post-mortem by means of SEM and FIB/SEM, and is correlated to the anode performance degradation under critical operating conditions, establishing Ni depletion, porosity increase and a tripe phase boundary density decrease in the anode functional layer. It is shown that short-term sulfur poisoning behavior can be used to assess long-term stability.

Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

Energy Technology Data Exchange (ETDEWEB)

Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

2016-02-15

We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Directory of Open Access Journals (Sweden)

Manjula N.

2015-12-01

Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

Copper supported on nanostructured mesoporous ceria-titania composites as catalysts for sustainable environmental protection: Effect of support composition

Czech Academy of Sciences Publication Activity Database

Issa, G. S.; Tsoncheva, T.; Mileva, A.; Dimitrov, M.D.; Kovacheva, D.; Henych, Jiří; Štengl, Václav

2017-01-01

Roč. 49, SI D (2017), s. 55-62 ISSN 0324-1130 Grant - others:AV ČR(CZ) BAS-17-13 Program:Bilaterální spolupráce Institutional support: RVO:61388980 Keywords : Mesoporous nanostructured ceria-titania doped with copper * template-assisted hydrothermal synthesis * ethyl acetate oxidation * methanol decomposition Subject RIV: CA - Inorganic Chemistry OBOR OECD: Inorganic and nuclear chemistry Impact factor: 0.238, year: 2016 http://www.bcc.bas.bg/BCC_Volumes/Volume_49_Special_D_2017/BCC2017-49-SE-D-055-062.pdf

A Novel Hybrid Axial-Radial Atmospheric Plasma Spraying Technique for the Fabrication of Solid Oxide Fuel Cell Anodes Containing Cu, Co, Ni, and Samaria-Doped Ceria

Science.gov (United States)

Cuglietta, Mark; Kuhn, Joel; Kesler, Olivera

2013-06-01

Composite coatings containing Cu, Co, Ni, and samaria-doped ceria (SDC) have been fabricated using a novel hybrid atmospheric plasma spraying technique, in which a multi-component aqueous suspension of CuO, Co3O4, and NiO was injected axially simultaneously with SDC injected radially in a dry powder form. Coatings were characterized for their microstructure, permeability, porosity, and composition over a range of plasma spray conditions. Deposition efficiency of the metal oxides and SDC was also estimated. Depending on the conditions, coatings displayed either layering or high levels of mixing between the SDC and metal phases. The deposition efficiencies of both feedstock types were strongly dependent on the nozzle diameter. Plasma-sprayed metal-supported solid oxide fuel cells utilizing anodes fabricated with this technique demonstrated power densities at 0.7 V as high as 366 and 113 mW/cm2 in humidified hydrogen and methane, respectively, at 800 °C.

Synthesis of Ceria Zirconia Oxides using Solvothermal Treatment

Directory of Open Access Journals (Sweden)

Machmudah Siti

2018-01-01

Full Text Available Ceria oxide (CeO2 is widely used as catalyst with high oxygen storage capacity at low temperature. The addition of zirconia oxide (ZrO2 to CeO2 can enhance oxygen storage capacity as well as thermal stability. In this work, ceria zirconia oxides has been synthesized via a low temperature solvothermal treatment in order to produce ceria zirconia oxides composite with high oxygen storage capacity as electrolyte of solid oxide fuel cells (SOFC. Under solvothermal conditions, solvent may control the direction of crystal growth, morphology, particle size and size distribution, because of the controllability of thermodynamics and transport properties by pressure and temperature. Water, mixed of water and ethanol (70/30 vol/vol, and mixed of water and ethylene glycol (70/30 vol/vol were used as solvent, while Ce(NO33 and ZrO(NO32 with 0.06 M concentration were used as precursor. The experiments were conducted at temperature of 150 °C and pressure for 2 h in a Teflon-lined autoclave of 100 mL volume. The synthesized products were dried at 60 °C for 6 and 12 h and then calcined at 900 °C for 6 h. The particle products were characterized using SEM, XRD, TG/DTA, and Potentiostat. The results showed that the morphology of particles formed were affected by the solvent. Solid plate shaped particles were produced in water, and tend to be pore with the addition of ethylene glycol. The addition of ethanol decreased the size of particles with sphere shaped. The XRD pattern indicated that ceria-zirconia oxides particles are uniformly distributed in the structure to form a homogeneous solid solution. Based on the electrochemical analysis, ceria zirconia oxides produced via solvothermal synthesis had high conductivity ion of 0.5594 S/cm, which is higher than minimum conductivity ion requirement of 0.01 S/cm for SOFC electrolyte. It indicated that ceria zirconia oxides produced via solvothermal synthesis is suitable for SOFC electrolyte.

The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Rodrigo, K.; Pryds, N.; Theil Kuhn, L.; Esposito, V.; Linderoth, S. [Technical University of Denmark, Fuel Cells and Solid State Chemistry Division, Risoe DTU, Roskilde (Denmark); Heiroth, S.; Lippert, T. [Paul Scherrer Institute, General Energy Research Department, Villigen PSI (Switzerland); Schou, J. [Technical University of Denmark, Department of Photonics Engineering, Roskilde (Denmark)

2011-09-15

Ultrathin crystalline films of 10 mol% gadolinia-doped ceria (CGO10) are grown on MgO (100) substrates by pulsed laser deposition at a moderate temperature of 400 C. As-deposited CGO10 layers of approximately 4 nm, 14 nm, and 22 nm thickness consist of fine grains with dimensions {<=}{proportional_to}11 nm. The films show high density within the thickness probed in the X-ray reflectivity experiments. Thermally activated grain growth, density decrease, and film surface roughening, which may result in the formation of incoherent CGO10 islands by dewetting below a critical film thickness, are observed upon heat treatment at 400 C and 800 C. The effect of the grain coarsening on the electrical characteristics of the layers is investigated and discussed in the context of a variation of the number density of grain boundaries. The results are evaluated with regard to the use of ultrathin CGO10 films as seeding templates for the moderate temperature growth of thick solid electrolyte films with improved oxygen transport properties. (orig.)

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

Science.gov (United States)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

Science.gov (United States)

Noda, Kei; Wakatsuki, Yusuke; Yamagishi, Yuji; Wada, Yasuo; Toyabe, Toru; Matsushige, Kazumi

2013-02-01

The current enhancement mechanism in contact-area-limited doping for bottom-gate, bottom-contact (BGBC) p-channel organic thin-film transistors (OTFTs) was investigated both by simulation and experiment. Simulation results suggest that carrier shortage and large potential drop occur in the source-electrode/channel interface region in a conventional BGBC OTFT during operation, which results in a decrease in the effective field-effect mobility. These phenomena are attributed to the low carrier concentration of active semiconductor layers in OTFTs and can be alleviated by contact-area-limited doping, where highly doped layers are prepared over source-drain electrodes. According to two-dimensional current distribution obtained from the device simulation, a current flow from the source electrode to the channel region via highly doped layers is generated in addition to the direct carrier injection from the source electrode to the channel, leading to the enhancement of the drain current and effective field-effect mobility. The expected current enhancement mechanism in contact-area-limited doping was experimentally confirmed in typical α-sexithiophene (α-6T) BGBC thin-film transistors.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2016-03-24

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-03-15

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

Energy Technology Data Exchange (ETDEWEB)

Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

2011-10-17

Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

Densification of Highly Defective Ceria by High Temperature Controlled Re-Oxidation

DEFF Research Database (Denmark)

Ni, De Wei; Glasscock, Julie; Pons, Aénor

2014-01-01

Highly enhanced densification and grain growth of Ce0.9Gd0.1O1.95-δ (CGO, gadolinium-doped ceria, with 10 mol% Gd) is achieved in low oxygen activity atmospheres. However, the material can suffer mechanical failures during cooling when the re-oxidation process is not controlled due to the large...... volume changes. In this work, the redox process of CGO is investigated using dilatometry, microscopy, electrochemical impedance spectroscopy and thermodynamic analysis. In addition, the conditions allowing controlled re-oxidation and cooling in order to preserve the mechanical integrity of the CGO...... component are defined: this can be achieved over a wide temperature range (800−1200◦C) by gradually increasing the oxygen content of the atmosphere. It is found that the electrical conductivity of the CGO, particularly at low temperature (oxidation...

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Directory of Open Access Journals (Sweden)

Hariyadi Soetedjo

2018-03-01

Full Text Available Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1 and (2 0 0 occurs during deposition. Keywords: Thin films, Lead sulfide, Sputtering, Resistivity, Semiconductor, Infrared

Indium doped zinc oxide thin films obtained by electrodeposition

International Nuclear Information System (INIS)

Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

2005-01-01

Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

Energy Technology Data Exchange (ETDEWEB)

Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

2016-07-01

The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp{sup 3} network to sp{sup 2} as evidenced by an increase of the sp{sup 2} cluster and I{sub D}/I{sub G} ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp{sup 2} cluster and I{sub D}/I{sub G} ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp{sup 3}-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp{sup 3} and sp{sup 2} contents are estimated from C K-edge XANES and VB-PES measurements.

Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

Science.gov (United States)

Ali, H. M.; Abd El-Ghanny, H. A.

2008-04-01

Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

Preparation of cadmium-doped ZnO thin films by SILAR and their ...

Indian Academy of Sciences (India)

Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath .... of complex ion on the substrate followed by reaction of the .... Intensity (a.u.). 0. 500 .... trum confirmed the presence of Zn, O and Cd elements in the.

Chromium doped TiO2 sputtered thin films synthesis, physical investigations and applications

CERN Document Server

Hajjaji, Anouar; Gaidi, Mounir; Bessais, Brahim; El Khakani, My Ali

2014-01-01

This book presents co-sputtered processes ways to produce chrome doped TiO2 thin films onto various substrates such as quartz, silicon and porous silicon. Emphasis is given on the link between the experimental preparation and physical characterization in terms of Cr content. Moreover, the structural, optical and optoelectronic investigations are emphasized throughout. The book explores the potencial applications of devices based on Cr doped TiO2 thin films as gas sensors and in photocatalysis and in the photovoltaic industry. Also, this book provides extensive leads into research literature, and each chapter contains details which aim to develop awareness of the subject and the methods used. The content presented here will be useful for graduate students as well as researchers in materials science, physics, chemistry and engineering.

Ameliorative role of nano-ceria against amine coated Ag-NP induced toxicity in Labeo rohita

Science.gov (United States)

Khan, Muhammad Saleem; Qureshi, Naureen Aziz; Jabeen, Farhat

2018-03-01

Silver nanoparticles (Ag-NPs) and its byproducts can spread pollution in aquatic habitat. Liver and gills are key target for toxicity. Oxidative stress, tissue alterations, and hemotoxicity are assumed to be associated with Ag-NPs in target animals. Cerium oxide nanoparticles (nano-ceria) show antioxidant potential in scavenging the free radicals generated in Ag-NP-induced oxidative stress. We determined ameliorated role of nano-ceria against Ag-NP-induced toxicity in fresh water Labeo rohita (L. rohita). Four groups were used in study including control, nano-ceria, Ag-NPs, and Ag-NPs + nano-ceria. Ag-NPs (30 mg l-1) and nano-ceria (50 µg kg-1) were given through water and prepared feed, respectively. The samples were taken after 28 days. Results demonstrated that pre-treatment of nano-ceria recovered L. rohita from Ag-NP-induced toxicity and oxidative stress. Nano-ceria pre-treatment actively mimics the activity of GST, GSH, CAT, and SOD. Furthermore, Ag-NPs' treatment caused severe inflammation and necrosis in hepatic parenchyma which leaded to congestion of blood in hepatic tissues. Accumulation of a yellow pigment in hepatic tissue was also seen due to necrosis of affected cells. In nano-ceria pre-treatment, there was no congestion in hepatic tissue. Vacuolization of cells and necrosis in some area was recorded in nano-ceria pre-treated group, but the gill and hepatic tissue showed improvement against Ag-NP-induced damage. Nano-ceria pre-treatment also improved hematological parameters in Ag-NP-treated fish. This study concluded that Ag-NP-induced toxicity in treated fish and pre-treatment of nano-ceria show ameliorative role.

Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

NARCIS (Netherlands)

Eising, Gert; Pauza, Andrew; Kooi, Bart J.

The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

Investigation of the structural, surface, optical and electrical properties of the Indium doped CuxO thin films deposited by a thermionic vacuum arc

Science.gov (United States)

Musaoğlu, Caner; Pat, Suat; Özen, Soner; Korkmaz, Şadan; Mohammadigharehbagh, Reza

2018-03-01

In this study, investigation of some physical properties of In-doped CuxO thin films onto amorphous glass substrates were done. The thin films were depsoied by thermionic vacuum arc technique (TVA). TVA technique gives a thin film with lower precursor impurity according to the other chemical and physical depsoition methods. The microstructural properties of the produced thin films was determined by x-ray diffraction device (XRD). The thickness values were measured as to be 30 nm and 60 nm, respectively. The miller indices of the thin films’ crystalline planes were determined as to be Cu (111), CuO (\\bar{1} 12), CuInO2 (107) and Cu2O (200), Cu (111), CuO (\\bar{1} 12), CuO (\\bar{2} 02), CuInO2 (015) for sample C1 and C2, respectively. The produced In-doped CuO thin films are in polycrystalline structure. The surface properties of produced In doped CuO thin films were determined by using an atomic force microscope (AFM) and field emission scanning electron microscope (FESEM) tools. The optical properties of the In doped CuO thin films were determined by UV–vis spectrophotometer, interferometer, and photoluminescence devices. p-type semiconductor thin film was obtained by TVA depsoition.

Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films

International Nuclear Information System (INIS)

Zribi, M.; Kanzari, M.; Rezig, B.

2008-01-01

Structural and optical properties of Na-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 deg. C in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In 6 S 7 , which disappeared on annealing above 350 deg. C. Good quality CuInS 2 :Na 0.3% films were obtained on annealing at 500 deg. C. Furthermore, we found that the absorption coefficient of Na-doped CuInS 2 thin films reached 1.5 x 10 5 cm -1 . The change in band gap of the doped samples annealed in the temperatures from 250 to 500 deg. C was in the range 0.038-0.105 eV

High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

Science.gov (United States)

Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2018-03-01

Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

International Nuclear Information System (INIS)

Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

2013-01-01

To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

Growth of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Aravazhi, S.; Geskus, D.; Pollnau, Markus; Worhoff, Kerstin; Agazzi, L.; Ismail, N.; Leijtens, X

2008-01-01

Rare-earth-ion-doped $KY(WO_4)_2 (KYW)$ is an important candidate for solid-state lasers. Its high refractive indices of the order of 2.0 make it attractive also for applications as integrated optical devices. Liquid phase epitaxy was employed for growing mono-crystalline KYW thin films co-doped

Microstructural characterization of composite cobaltite and lanthanum-based ceria for use as fuel cell cathodes

International Nuclear Information System (INIS)

Rodrigues, E.R.T.; Nascimento, R.M.; Miranda, A.C. de; Lima, A.M. de; Macedo, D.A.

2016-01-01

Fuel cells are devices that convert chemical energy into electricity via redox reactions. In this work, the lanthanum cobaltite doped with strontium and iron (La_0_,_6Sr_0_,_4Co_0_,_2Fe_0_,_8O_3 - LSCF) a traditional cathodes material of the fuel cell was mixed with an electrolyte material (composite) to the base ceria doped with gadolinia and a eutectic mixture of lithium carbonates and sodium (CGO-NLC). The powders of LSCF and CGO-NLC were obtained by the citrate method and mixed to obtain a composite cathode. Samples obtained by uniaxial pressure between 5 and 10 MPa were sintered at 1100°C and investigated by X-ray diffraction, scanning electron microscopy and micro hardness test. A symmetric cell cathode / electrolyte / cathode, obtained by co-pressing and co-sintering was investigated by electron microscopy. The results indicated that the composite is chemically stable up to the sintering temperature used. The hardness ranged between 51 and 227 HV. (author)

Observation of long phase-coherence length in epitaxial La-doped CdO thin films

Science.gov (United States)

Yun, Yu; Ma, Yang; Tao, Songsheng; Xing, Wenyu; Chen, Yangyang; Su, Tang; Yuan, Wei; Wei, Jian; Lin, Xi; Niu, Qian; Xie, X. C.; Han, Wei

2017-12-01

The search for long electron phase-coherence length, which is the length that an electron can keep its quantum wavelike properties, has attracted considerable interest in the last several decades. Here, we report the long phase-coherence length of ˜3.7 μm in La-doped CdO thin films at 2 K. Systematical investigations of the La doping and the temperature dependences of the electron mobility and the electron phase-coherence length reveal contrasting scattering mechanisms for these two physical properties. Furthermore, these results show that the oxygen vacancies could be the dominant scatters in CdO thin films that break the electron phase coherence, which would shed light on further investigation of phase-coherence properties in oxide materials.

Electroceramic reactors

Energy Technology Data Exchange (ETDEWEB)

Bagger, C. [Risoe National Lab., Materials Research Dept. (Denmark)

1999-10-01

Production of Gd-doped and Y-doped ceria has been successfully accomplished using a continuous technique with industrial production potential. Production parameters for tape casting and low temperature sintering of Gd-doped ceria membranes have been established as well. Yttria doping has been found cheaper than gadolinia doping, but sintering to gastightness was difficult, because grain growth is suppressed. The volume stability at 600 deg. C of yttria doped ceria during reduction was high. (EHS)

Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

Science.gov (United States)

Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

2018-02-01

The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenggong; Wang, Congcong; Kauppi, John [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Liu, Xiaoliang [Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China); Gao, Yongli, E-mail: ygao@pas.rochester.edu [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China)

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Adhesion and Atomic Structures of Gold on Ceria Nanostructures:The Role of Surface Structure and Oxidation State of Ceria Supports

Energy Technology Data Exchange (ETDEWEB)

Lin, Yuyuan [Northwestern University, Evanston; Wu, Zili [ORNL; Wen, Jianguo [Argonne National Laboratory (ANL); Poeppelmeier, Kenneth R [Northwestern University, Evanston; Marks, Laurence D [Northwestern University, Evanston

2015-01-01

Recent advances in heterogeneous catalysis have demonstrated that oxides supports with the same material but different shapes can result in metal catalysts with distinct catalytic properties. The shape-dependent catalysis was not well-understood owing to the lack of direct visualization of the atomic structures at metal-oxide interface. Herein, we utilized aberration-corrected electron microscopy and revealed the atomic structures of gold particles deposited on ceria nanocubes and nanorods with {100} or {111} facets exposed. For the ceria nanocube support, gold nanoparticles have extended atom layers at the metal-support interface. In contrast, regular gold nanoparticles and rafts are present on the ceria nanorod support. After hours of water gas shift reaction, the extended gold atom layers and rafts vanish, which is associated with the decrease of the catalytic activities. By understanding the atomic structures of the support surfaces, metal-support interfaces, and morphologies of the gold particles, a direct structure-property relationship is established.

Diffusivity, solubility and thermodynamic modelling of diffusion growth of Ga"3"+-doped LiTaO_3 thin film for integrated optics

International Nuclear Information System (INIS)

Zhang, De-Long; Zhang, Qun; Zhang, Pei; Kang, Jian; Wong, Wing-Han; Yu, Dao-Yin

2016-01-01

Graphical abstract: Diffusion growth of Ga"3"+-doped LiTaO_3(LT) thin film was studied thermodynamically. Some Ga"3"+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga_2O_3 film at the temperature range of (1273 to 1473) K. The Ga"3"+ profile in the grown thin film was analyzed by secondary ion mass spectrometry. Form the measured Ga"3"+ profiles, some thermodynamic parameters were obtained. These include diffusivity, diffusion constant, chemical activation energy, solubility, solubility constant and enthalpy of solution. These parameters are crucial to design and growth of a Ga"3"+-doped LT thin film with desired Ga"3"+ profile for integrated optics application. A thermodynamic model is suggested for the growth and verified experimentally. - Highlights: • Diffusion growth of Ga"3"+-doped LiTaO_3 thin film were studied thermodynamically. • Diffusion constant is 1.41 · 10"−"6 m"2/s and activation energy is 237.2 kJ/mol. • Solubility constant is 22.9 · 10"2"6 ions/m"3 and enthalpy of solution is 28.9 kJ/mol. • Ga"3"+ dopant has small effect on LiTaO_3 refractive index. • Ga"3"+ growth can be described by a Fick-type equation with a constant diffusivity. - Abstract: A thermodynamic study was performed on diffusion growth of Ga"3"+-doped LiTaO_3(LT) thin film for integrated optics. Some Ga"3"+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga_2O_3 film at the temperature range of (1273 to 1473) K. After growth, the refractive indices at Ga"3"+-doped and un-doped surface parts were measured by prism coupling technique and Li composition there was evaluated from the measured refractive indices. The results show that Ga"3"+ dopant has small effect on the LT index. Li_2O out-diffusion is not measurable. The Ga"3"+ profile in the grown thin film was analysed by secondary ion mass spectrometry. It is found that the grown Ga"3"+ ions follow a complementary error function profile. A

H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

Energy Technology Data Exchange (ETDEWEB)

Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

2017-02-28

Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

International Nuclear Information System (INIS)

Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

2015-01-01

Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

Dynamic magnetization of NiZn ferrite doped FeSiAl thin films fabricated by oblique sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

2017-06-15

Highlights: • We prepared NiZn ferrite doped FeSiAl-based thin films using oblique deposition technique. • The magnetic properties of FeSiAl-based thin films were systematically studied. • Two ferromagnetic resonance peaks were observed in the permeability spectra. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The thermal stability of properties we studied was relatively good. - Abstract: In this study, we comprehensively investigate the dynamic magnetic properties of FeSiAl-NiZnFeO thin films prepared by the oblique deposition method via a shorted microstrip perturbation technique. For the films with higher oblique angle and NiZn ferrite doping amount, there are two ferromagnetic resonance peaks observed in the permeability spectra, and both of the two peaks originate from FeSiAl. Furthermore, the magnetic anisotropy field H{sub K} of the ferromagnetic resonance peak at higher frequency is enhanced with increasing doping amount, which is interpreted in terms of the contribution of reinforced stress-induced anisotropy and shape anisotropy brought about by doping elements and oblique sputtering method. In addition, the thermal stability of the ferromagnetic resonance frequency f{sub FMR} of FeSiAl-NiZnFeO films with oblique angles of 35° and 45° with respect to temperature ranging from 300 K to 420 K is deteriorated with increasing ferrite doping amount, which is mainly ascribed to the influence of pair-ordering anisotropy and/or the reduction of the FeSiAl grain size.

Molybdenum Doped SnO2 Thin Films as a Methanol Vapor Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2013-02-01

Full Text Available The molybdenum doped SnO2 thin films were synthesized by conventional spray pyrolysis route and has been investigated for the methanol vapor sensing. The structural and elemental composition analysis of thin films was carried out by X- ray diffraction and Scanning Electron Microscopy (SEM and Energy Dispersive X-ray spectroscopy (EDAX.The XRD spectrum revealed that the thin films have the polycrystalline nature with a mixed phase comprising of SnO2 and MoO3. The scanning Electron Microscopy (SEM clears that the surface morphology observed to be granular, uniformly covering the entire surface area of the thin film. The methanol vapor sensing studies were performed in dry air at the different temperatures. The influence of the concentration of Molybdenum and operating temperature on the sensor performance has been investigated.

A comparative study of humidity sensing and photocatalytic applications of pure and nickel (Ni)-doped WO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ramkumar, S. [Bannari Amman Institute of Technology, Department of Physics, Erode, Tamilnadu (India); Rajarajan, G. [Vidhya Mandhir Institute of Technology, Department of Physics, Erode, Tamilnadu (India)

2017-06-15

Nanocrystalline of pristine and nickel (Ni)-doped tungsten trioxide (WO{sub 3}) thin films was deposited by chemical bath deposition method. The concentrations of Ni ions were varied from 0 to 10 wt%. In order to improve the crystallinity of the films were annealed at 600 C for 2 h in the ambient atmosphere. X-ray diffraction results reveal that the WO{sub 3} doped with nickel crystallizes in monoclinic structure and the results are in good agreement with the standard JCPDS data (card no: 83-0951). AFM micrographs reveal that average grain size of about 27-39 nm for pure and Ni-doped WO{sub 3} thin films. In addition, the band gap of the Ni-doped WO{sub 3} nanostructures is facilely tunable by controlling the Ni contents. The humidity sensor setup was fabricated and measured for pure and Ni-doped WO{sub 3} thin film sensor with various level of RH (10-90%). The Ni-doped WO{sub 3} sensor showed fast response and high sensitivity than pure WO{sub 3}. The photocatalytic activities of the films were evaluated by degradation of methyl orange, methylene blue and phenol in an aqueous solution under visible light irradiation. The photocatalytic activity of WO{sub 3} nanostructures could be remarkably enhanced by doping the Ni impurity. (orig.)

Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

Directory of Open Access Journals (Sweden)

Domenico D’Agostino

2017-05-01

Full Text Available Piezoelectricity and charge storage of undoped and Co-doped ZnO thin films were investigated by means of PiezoResponse Force Microscopy and Kelvin Probe Force Microscopy. We found that Co-doped ZnO exhibits a large piezoelectric response, with the mean value of piezoelectric matrix element d33 slightly lower than in the undoped sample. Moreover, we demonstrate that Co-doping affects the homogeneity of the piezoelectric response, probably as a consequence of the lower crystalline degree exhibited by the doped samples. We also investigate the nature of the interface between a metal electrode, made up of the PtIr AFM tip, and the films as well as the phenomenon of charge storage. We find Schottky contacts in both cases, with a barrier value higher in PtIr/ZnO than in PtIr/Co-doped ZnO, indicating an increase in the work function due to Co-doping.

Gas Sensing Properties of Metal Doped WO3 Thin Film Sensors Prepared by Pulsed Laser Deposition and DC Sputtering Process

Science.gov (United States)

Bhuiyan, Md. Mosharraf Hossain; Ueda, Tsuyoshi; Ikegami, Tomoaki; Ebihara, Kenji

2006-10-01

Tungsten trioxide (WO3) thin films gas sensors were prepared by the KrF excimer pulsed laser deposition (PLD) method. The films were prepared on the quartz glass, silicon and also on the Al2O3 sensor substrates with platinum interdigitated electrodes. The effect of doping of the platinum (Pt), palladium (Pd) or gold (Au) on the WO3 thin film was also investigated. These metals were doped to the WO3 thin film by the DC sputtering process during the PLD. The substrate temperature and the oxygen pressure were 400 °C and 100 mTorr, respectively, during the deposition. The films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). The sensitivity of the prepared sensors to 60 ppm NO gas was examined using the two terminal resistance method in a chamber at atmospheric pressure and operating temperatures of 25-350 °C. The sensitivity of the WO3 thin films doped with Pt, Pd, or Au was found to be higher than that of the undoped WO3 thin film.

Transport and magnetic properties of Ce-doped LaMnO3 thin films

International Nuclear Information System (INIS)

Yanagida, Takeshi; Kanki, Teruo; Vilquin, Bertrand; Tanaka, Hidekazu; Kawai, Tomoji

2005-01-01

Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

Science.gov (United States)

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

Directory of Open Access Journals (Sweden)

U.S. Mbamara

2016-06-01

Full Text Available Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS and X-ray Diffraction (XRD. The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-face surfaces were examined to assess the wear dimension and failure mechanism. Both friction behavior and wear (in the ball counter-face were observed to be dependent on the crystallinity and thickness of the thin film coatings.

Ga-doped ZnO thin film surface characterization by wavelet and fractal analysis

Energy Technology Data Exchange (ETDEWEB)

Jing, Chenlei; Tang, Wu, E-mail: tang@uestc.edu.cn

2016-02-28

Graphical abstract: - Highlights: • Multi-resolution signal decomposition of wavelet transform is applied to Ga-doped ZnO thin films with various thicknesses. • Fractal properties of GZO thin films are investigated by box counting method. • Fractal dimension is not in conformity with original RMS roughness. • Fractal dimension mainly depends on the underside diameter (grain size) and distance between adjacent grains. - Abstract: The change in roughness of various thicknesses Ga-doped ZnO (GZO) thin films deposited by magnetron reactive sputtering on glass substrates at room temperature was measured by atomic force microscopy (AFM). Multi-resolution signal decomposition based on wavelet transform and fractal geometry was applied to process surface profiles, to evaluate the roughness trend of relevant frequency resolution. The results give a six-level decomposition and the results change with deposited time and surface morphology. Also, it is found that fractal dimension is closely connected to the underside diameter (grain size) and the distance between adjacent grains that affect the change rate of surface and the increase of the defects such as abrupt changes lead to a larger value of fractal dimension.

Optical Properties of Al- and Sb-Doped CdTe Thin Films

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

Heterogeneous photocatalytic degradation of toluene in static environment employing thin films of nitrogen-doped nano-titanium dioxide

Science.gov (United States)

Kannangara, Yasun Y.; Wijesena, Ruchira; Rajapakse, R. M. G.; de Silva, K. M. Nalin

2018-04-01

Photocatalytic semiconductor thin films have the ability to degrade volatile organic compounds (VOCs) causing numerous health problems. The group of VOCs called "BTEX" is abundant in houses and indoor of automobiles. Anatase phase of TiO2 has a band gap of 3.2 eV and UV radiation is required for photogeneration of electrons and holes in TiO2 particles. This band gap can be decreased significantly when TiO2 is doped with nitrogen (N-TiO2). Dopants like Pd, Cd, and Ag are hazardous to human health but N-doped TiO2 can be used in indoor pollutant remediation. In this research, N-doped TiO2 nano-powder was prepared and characterized using various analytical techniques. N-TiO2 was made in sol-gel method and triethylamine (N(CH2CH3)3) was used as the N-precursor. Modified quartz cell was used to measure the photocatalytic degradation of toluene. N-doped TiO2 nano-powder was illuminated with visible light (xenon lamp 200 W, λ = 330-800 nm, intensity = 1 Sun) to cause the degradation of VOCs present in static air. Photocatalyst was coated on a thin glass plate, using the doctor-blade method, was inserted into a quartz cell containing 2.00 µL of toluene and 35 min was allowed for evaporation/condensation equilibrium and then illuminated for 2 h. Remarkably, the highest value of efficiency 85% was observed in the 1 μm thick N-TiO2 thin film. The kinetics of photocatalytic degradation of toluene by N-TiO2 and P25-TiO2 has been compared. Surface topology was studied by varying the thickness of the N-TiO2 thin films. The surface nanostructures were analysed and studied with atomic force microscopy with various thin film thicknesses.

Synthesis, microstructural characterization and optical properties of undoped, V and Sc doped ZnO thin films

International Nuclear Information System (INIS)

Amezaga-Madrid, P.; Antunez-Flores, W.; Ledezma-Sillas, J.E.; Murillo-Ramirez, J.G.; Solis-Canto, O.; Vega-Becerra, O.E.; Martinez-Sanchez, R.; Miki-Yoshida, M.

2011-01-01

Research highlights: → Undoped, V and Sc doped ZnO thin films by Aerosol Assisted Chemical Vapour Deposition. → Optimum substrate temperatures of 673 K and 623 K for Sc and V doped films. → Around one third of the dopants in solution were deposited into the films. → Crystallite and grain size decreased with the increase of dopant concentration. → Optical band gap increased from 3.29 to 3.32 eV for undoped to 7 Sc/Zn at. %. - Abstract: Many semiconductor oxides (ZnO, TiO 2 , SnO 2 ) when doped with a low percentage of non-magnetic (V, Sc) or magnetic 3d (Co, Mn, Ni, Fe) cation behave ferromagnetically. They have attracted a great deal of interest due to the integration of semiconducting and magnetic properties in a material. ZnO is one of the most promising materials to carry out these tasks in view of the fact that it is optically transparent and has n or p type conductivity. Here, we report the synthesis, microstructural characterization and optical properties of undoped, V and Sc doped zinc oxide thin films. ZnO based thin films with additions of V and Sc were deposited by the Aerosol Assisted Chemical Vapour Deposition method. V and Sc were incorporated separately in the precursor solution. The films were uniform, transparent and non-light scattering. The microstructure of the films was characterized by Grazing Incidence X-ray Diffraction, Scanning Electron Microscopy, and Scanning Probe Microscopy. Average grain size and surface rms roughness were estimated by the measurement of Atomic Force Microscopy. The microstructure of doped ZnO thin films depended on the type and amount of dopant material incorporated. The optical properties were determined from specular reflectance and transmittance spectra. Results were analyzed to determine the optical constant and band gap of the films. An increase in the optical band gap with the content of Sc dopant was obtained.

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Science.gov (United States)

Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Energy Technology Data Exchange (ETDEWEB)

Novruzov, V.D. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Keskenler, E.F., E-mail: keskenler@gmail.com [Department of Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize (Turkey); Tomakin, M. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Kahraman, S. [Department of Physics, Mustafa Kemal University, Hatay (Turkey); Gorur, O. [Department of Physics, Abant Izzet Baysal University, Bolu (Turkey)

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu{sub 2}S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

Preparation of Palladium-Impregnated Ceria by Metal Complex Decomposition for Methane Steam Reforming Catalysis

Directory of Open Access Journals (Sweden)

Worawat Wattanathana

2017-01-01

Full Text Available Palladium-impregnated ceria materials were successfully prepared via an integrated procedure between a metal complex decomposition method and a microwave-assisted wetness impregnation. Firstly, ceria (CeO2 powders were synthesized by thermal decomposition of cerium(III complexes prepared by using cerium(III nitrate or cerium(III chloride as a metal source to form a metal complex precursor with triethanolamine or benzoxazine dimer as an organic ligand. Palladium(II nitrate was consequently introduced to the preformed ceria materials using wetness impregnation while applying microwave irradiation to assist dispersion of the dopant. The palladium-impregnated ceria materials were obtained by calcination under reduced atmosphere of 10% H2 in He stream at 700°C for 2 h. Characterization of the palladium-impregnated ceria materials reveals the influences of the metal complex precursors on the properties of the obtained materials. Interestingly, the palladium-impregnated ceria prepared from the cerium(III-benzoxazine dimer complex revealed significantly higher BET specific surface area and higher content of the more active Pdδ+ (δ > 2 species than the materials prepared from cerium(III-triethanolamine complexes. Consequently, it exhibited the most efficient catalytic activity in the methane steam reforming reaction. By optimization of the metal complex precursors, characteristics of the obtained palladium-impregnated ceria catalysts can be modified and hence influence the catalytic activity.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

Science.gov (United States)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

Science.gov (United States)

Rafique, Subrina; Karim, Md Rezaul; Johnson, Jared M.; Hwang, Jinwoo; Zhao, Hongping

2018-01-01

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ˜1.2 × 1018 cm-3 and ˜9.5 × 1017 cm-3 with mobilities of ˜72 cm2/V s and ˜42 cm2/V s, respectively.

EuO and Gd-doped EuO thin films. Epitaxial growth and properties

International Nuclear Information System (INIS)

Sutarto, Ronny

2009-01-01

Europium oxide (EuO) based materials exhibit a wealth of spectacular phenomena, including half-metallic ferromagnetism, metal-insulator transition, colossal magneto-resistance, large magneto-optical Kerr effect, tunable ferromagnetic ordering temperatures, and large and long-lived photo-induced conductivity. These extraordinary properties make EuO an ideal candidate for implementation in device applications, in particular, for spintronics. Most of the work in the past has been carried out on bulk EuO, but for device applications it is preferred to have the EuO in thin lm form. A urry of studies have therefore emerged in the last decade in order to explore a wide variety of preparation routes and to investigate the properties of the resulting EuO thin films. A recent highlight is the demonstration that doped EuO films can be fabricated on Si and GaN, thereby exhibiting the expected spin-polarized transport effects. Nevertheless, it is still far from a trivial task to prepare EuO thin films with well de ned properties. For bulk EuO, it is already known that stoichiometry is the key issue, and that the presence of small amounts of defects or impurities quickly lead to very large deviations of the material properties. In fact, to make bulk EuO to be stoichiometric one needs temperatures as high as 1800 C. It is obvious that such high temperatures are not compatible with device engineering processes. The preparation of thin films must therefore involve much lower temperatures, preferably not higher than 400-500 C. The consequences are very dear. It turned out that many of the recent studies on EuO thin films are suffering from sample quality problems, due to the presence of, e.g., trivalent Eu species (Eu 3 O 4 , Eu 2 O 3 ), oxygen vacancies, or even Eu metal clusters. Controlled doping of the EuO with trivalent rare-earth ions is also not trivial, since most often even the actual doping concentrations were not known. In fact, one could also question in this respect the

EuO and Gd-doped EuO thin films. Epitaxial growth and properties

Energy Technology Data Exchange (ETDEWEB)

Sutarto, Ronny

2009-07-06

Europium oxide (EuO) based materials exhibit a wealth of spectacular phenomena, including half-metallic ferromagnetism, metal-insulator transition, colossal magneto-resistance, large magneto-optical Kerr effect, tunable ferromagnetic ordering temperatures, and large and long-lived photo-induced conductivity. These extraordinary properties make EuO an ideal candidate for implementation in device applications, in particular, for spintronics. Most of the work in the past has been carried out on bulk EuO, but for device applications it is preferred to have the EuO in thin lm form. A urry of studies have therefore emerged in the last decade in order to explore a wide variety of preparation routes and to investigate the properties of the resulting EuO thin films. A recent highlight is the demonstration that doped EuO films can be fabricated on Si and GaN, thereby exhibiting the expected spin-polarized transport effects. Nevertheless, it is still far from a trivial task to prepare EuO thin films with well de ned properties. For bulk EuO, it is already known that stoichiometry is the key issue, and that the presence of small amounts of defects or impurities quickly lead to very large deviations of the material properties. In fact, to make bulk EuO to be stoichiometric one needs temperatures as high as 1800 C. It is obvious that such high temperatures are not compatible with device engineering processes. The preparation of thin films must therefore involve much lower temperatures, preferably not higher than 400-500 C. The consequences are very dear. It turned out that many of the recent studies on EuO thin films are suffering from sample quality problems, due to the presence of, e.g., trivalent Eu species (Eu{sub 3}O{sub 4}, Eu{sub 2}O{sub 3}), oxygen vacancies, or even Eu metal clusters. Controlled doping of the EuO with trivalent rare-earth ions is also not trivial, since most often even the actual doping concentrations were not known. In fact, one could also question in

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

International Nuclear Information System (INIS)

Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

2015-01-01

We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Science.gov (United States)

Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-02-01

We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

International Nuclear Information System (INIS)

El Amiri, A.; Moubah, R.; Lmai, F.; Abid, M.; Hassanain, N.; Hlil, E.K.; Lassri, H.

2016-01-01

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

El Amiri, A., E-mail: aelamiri@casablanca.ma [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Moubah, R., E-mail: reda.moubah@hotmail.fr [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Lmai, F. [LPTA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Abid, M. [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Hassanain, N. [Laboratoire de Physique des Matériaux, Faculté des Sciences, BP 1014 Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France); Lassri, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco)

2016-01-15

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Ultraviolet Sensing by Al-doped ZnO Thin Films

International Nuclear Information System (INIS)

Rashid, A.R.A.; Menon, P.S.; Shaari, S.

2011-01-01

We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500 degree Celsius for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an improvement in electrical properties when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time. (author)

Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

Science.gov (United States)

Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

2018-01-01

Low concentrations (stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Energy Technology Data Exchange (ETDEWEB)

Shimoyama, Iwao, E-mail: shimoyama.iwao@jaea.go.jp [Material Science Research Center, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan); Baba, Yuji [Fukushima Administrative Department, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan); Hirao, Norie [Material Science Research Center, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan)

2017-05-31

Highlights: • Micro-orientation control method for organic polysilane thin films is proposed. • This method utilizes surface modification of graphite using heteroatom doping. • Lying, standing, and random orientations can be freely controlled by this method. • Micro-pattering of a polysilane film with controlled orientations is achieved. - Abstract: Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si K-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N{sub 2}{sup +}-irradiated substrates, and show no polarization dependence for an Ar{sup +}-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N{sub 2}{sup +}-irradiated, and Ar{sup +}-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of μm by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

A Humidity Sensor Based on Nb-doped Nanoporous TiO2 Thin Film

Directory of Open Access Journals (Sweden)

Mansoor Anbia

2011-11-01

Full Text Available The humidity sensing properties of the sensor fabricated from Nb-doped nanoporous TiO2 by screen-printing on the alumina substrate with Ag-Pd interdigital electrodes have been investigated. The nanoporous thin film has been prepared by sol-gel technique. The product has been characterized by X-ray diffraction and scanning electron microscopy to analyze the structure and its morphology. It is found that the impedance of this sensor changes more than four orders of magnitude in the relative humidity (RH range of 11–95 % at 25 °C. The response and recovery time of the sensor are about 19 and 25 s, respectively, during the RH variation from 11 to 95 %. The sensor shows high humidity sensitivity, rapid response and recovery, prominent stability, good repeatability and narrow hysteresis loop. These results indicate that Nb-doped nanoporous TiO2 thin films have a great potential for humidity sensing applications in room temperature operations.

Molten carbonate fuel cell cathode with mixed oxide coating

Science.gov (United States)

Hilmi, Abdelkader; Yuh, Chao-Yi

2013-05-07

A molten carbonate fuel cell cathode having a cathode body and a coating of a mixed oxygen ion conductor materials. The mixed oxygen ion conductor materials are formed from ceria or doped ceria, such as gadolinium doped ceria or yttrium doped ceria. The coating is deposited on the cathode body using a sol-gel process, which utilizes as precursors organometallic compounds, organic and inorganic salts, hydroxides or alkoxides and which uses as the solvent water, organic solvent or a mixture of same.

Structural, Morphological, and LPG Sensing Properties of Al-Doped ZnO Thin Film Prepared by SILAR

Directory of Open Access Journals (Sweden)

Shampa Mondal

2013-01-01

Full Text Available Undoped and aluminum doped zinc oxide (AZO thin films were deposited on glass substrates by successive ion layer adsorption and reaction (SILAR technique from ammonium zincate complex. The thin films are characterized by X-ray diffraction (XRD and scanning electron microscopy (SEM for their structural and morphological studies. Both undoped and Al-doped film show strong preferred c-axis orientation. The texture coefficient (TC of the film along (002 direction increases due to Al incorporation. SEM micrograph shows round shaped particles for pure ZnO. However AZO films show particles with off spherical shape and compact interconnected grains. Sensitivity of the film in presence of 80% LEL (lower explosive limit of LPG increases with temperature and is maximum at 325°C. Significantly high sensitivity of 87% with reasonably fast response was observed for 1% Al-doped ZnO (AZO film in presence of 1.6 vol% LPG at 325°C.

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

International Nuclear Information System (INIS)

Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

2011-01-01

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10 -4 Ω cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm 2 /Vs and carrier concentrations on the order of 10 20 cm -3 . All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10 -3 -10 -4 Ω cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

Preparation and characterisation of Al-doped Zn O thin films

International Nuclear Information System (INIS)

Saad, M.; Kassis, A.; Nounou, F.

2010-12-01

Al-doped Zn O thin films were prepared using RF magnetron sputtering under several preparation conditions (deposition pressure, RF power, substrate temperature). The films were optically and electrically characterized by measuring their transmission and resistance. Furthermore, x-ray diffraction spectroscopy was used in order to study the structural properties of these films. As a result of this study, the preparation conditions suitable for the highly conductive part of the window layer in solar cells were determined. (author)

Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

Directory of Open Access Journals (Sweden)

D. B. DUPARE

2009-02-01

Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

Effect of iron doping on structural and optical properties of TiO2 thin film by sol–gel routed spin coating technique

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Stephen Lourduraj

2017-08-01

Full Text Available Thin films of iron (Fe-doped titanium dioxide (Fe:TiO2 were prepared by sol–gel spin coating technique and further calcined at 450∘C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, ultraviolet–visible spectroscopy (UV–vis and atomic force microscopic (AFM techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.

XPS studies of Mg doped GDC (Ce0.8Gd0.2O2-δ) for IT-SOFC

Science.gov (United States)

Tyagi, Deepak; Rao, P. Koteswara; Wani, B. N.

2018-04-01

Fuel Cells have gained much attention as efficient and environment friendly device for both stationary as well as mobile applications. For intermediate temperature SOFC (IT-SOFC), ceria based electrolytes are the most promising one, due to their higher ionic conductivity at relatively lower temperatures. Gd doped ceria is reported to be having the highest ionic conductivity. In the present work, Mg is codoped along with Gd and the electronic structure of the constituents is studied by XPS. XPS confirm that the Cerium is present in +4 oxidation state only which indicates that electronic conduction can be completely avoided.

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

Fluorescent Nanocomposite of Embedded Ceria Nanoparticles in Crosslinked PVA Electrospun Nanofibers

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Nader Shehata

2016-06-01

Full Text Available This paper introduces a new fluorescent nanocomposite of electrospun biodegradable nanofibers embedded with optical nanoparticles. In detail, this work introduces the fluorescence properties of PVA nanofibers generated by the electrospinning technique with embedded cerium oxide (ceria nanoparticles. Under near-ultra violet excitation, the synthesized nanocomposite generates a visible fluorescent emission at 520 nm, varying its intensity peak according to the concentration of in situ embedded ceria nanoparticles. This is due to the fact that the embedded ceria nanoparticles have optical tri-valiant cerium ions, associated with formed oxygen vacancies, with a direct allowed bandgap around 3.5 eV. In addition, the impact of chemical crosslinking of the PVA on the fluorescence emission is studied in both cases of adding ceria nanoparticles in situ or of a post-synthesis addition via a spin-coating mechanism. Other optical and structural characteristics such as absorbance dispersion, direct bandgap, FTIR spectroscopy, and SEM analysis are presented. The synthesized optical nanocomposite could be helpful in different applications such as environmental monitoring and bioimaging.

On the growth mechanisms of polar (100) surfaces of ceria on copper (100)

Science.gov (United States)

Hackl, Johanna; Duchoň, Tomáš; Gottlob, Daniel M.; Cramm, Stefan; Veltruská, Kateřina; Matolín, Vladimír; Nemšák, Slavomír; Schneider, Claus M.

2018-05-01

We present a study of temperature dependent growth of nano-sized ceria islands on a Cu (100) substrate. Low-energy electron microscopy, micro-electron diffraction, X-ray absorption spectroscopy, and photoemission electron microscopy are used to determine the morphology, shape, chemical state, and crystal structure of the grown islands. Utilizing real-time observation capabilities, we reveal a three-way interaction between the ceria, substrate, and local oxygen chemical potential. The interaction manifests in the reorientation of terrace boundaries on the Cu (100) substrate, characteristic of the transition between oxidized and metallic surface. The reorientation is initiated at nucleation sites of ceria islands, whose growth direction is influenced by the proximity of the terrace boundaries. The grown ceria islands were identified as fully stoichiometric CeO2 (100) surfaces with a (2 × 2) reconstruction.

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

Science.gov (United States)

Samanta, Kousik

Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

Bioavailability and distribution and of ceria nanoparticles in simulated aquatic ecosystems, quantification with a radiotracer technique

International Nuclear Information System (INIS)

Zhang Zhiyong; Zhang Peng; He Xiao; Ma Yuhui; Lu Kai; Zhao Yuliang

2014-01-01

Although the presence of manufactured nanoparticles in the aquatic environment is still largely undocumented, their release could certainly occur in the future, particularly via municipal treatment plant effluents of cities supporting nano-industries. To get an initial estimate of the environmental behavior of nanomaterials, we investigated the distribution and accumulation of ceria nanoparticles in simulated aquatic ecosystems which included aquatic plant, shellfish, fish, water, and sediment using a radiotracer technique. Radioactive ceria ( 141 CeO 2 ) nanoparticles with a diameter of ca. 7 nm were synthesized by a precipitation method and added to the simulated aquatic ecosystems. The results indicate that the concentration of ceria nanoparticles in water decreased to a steady-state value after 3 days; meanwhile, the concentrations of ceria nanoparticles in the aquatic plant and sediment increased to their highest values. The distribution and accumulation characteristics of ceria nanoparticles in various aquatic organisms were different. Ceratophyllum demersum showed a high ability of accumulation of ceria nanoparticles from water. (authors)

Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

Science.gov (United States)

Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

2016-08-01

In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

Microstructural characterization of composite cobaltite and lanthanum-based ceria for use as fuel cell cathodes; Caracterizacao microestrutural de compositos a base de cobaltita de lantanio e ceria para aplicacao como catodos de celulas a combustivel

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, E.R.T.; Nascimento, R.M.; Miranda, A.C. de; Lima, A.M. de, E-mail: erickssonrtr@gmail.com [Universidade Federal do Rio Grande do Norte (UFRN), RN (Brazil); Macedo, D.A. [Universidade Federal da Paraiba (UFPB), PB (brazil)

2016-07-01

Fuel cells are devices that convert chemical energy into electricity via redox reactions. In this work, the lanthanum cobaltite doped with strontium and iron (La{sub 0,6}Sr{sub 0,4}Co{sub 0,2}Fe{sub 0,8}O{sub 3} - LSCF) a traditional cathodes material of the fuel cell was mixed with an electrolyte material (composite) to the base ceria doped with gadolinia and a eutectic mixture of lithium carbonates and sodium (CGO-NLC). The powders of LSCF and CGO-NLC were obtained by the citrate method and mixed to obtain a composite cathode. Samples obtained by uniaxial pressure between 5 and 10 MPa were sintered at 1100°C and investigated by X-ray diffraction, scanning electron microscopy and micro hardness test. A symmetric cell cathode / electrolyte / cathode, obtained by co-pressing and co-sintering was investigated by electron microscopy. The results indicated that the composite is chemically stable up to the sintering temperature used. The hardness ranged between 51 and 227 HV. (author)

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

Energy Technology Data Exchange (ETDEWEB)

Guan, Yan; Liu, Xiaohua [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian (China); Zhou, Dayu [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China); Mueller, Johannes [Fraunhofer IPMS-CNT, Dresden (Germany); Schenk, Tony; Schroeder, Uwe [NaMLab gGmbH/TU Dresden (Germany)

2015-10-15

A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO{sub 2} thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO{sub 2} thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Guan, Yan; Liu, Xiaohua; Zhou, Dayu; Xu, Jin; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

2015-01-01

A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO 2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO 2 thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of chlorine doping on the structural, morphological, optical and electrical properties of spray deposited CdS thin films

Directory of Open Access Journals (Sweden)

T. Sivaraman

2015-10-01

Full Text Available CdS and chlorine doped CdS (CdS:Cl thin films with different Cl-doping levels (0, 2, 4, 6 and 8 at% have been deposited on glass substrates by a spray pyrolysis technique using a perfume atomizer. The effect of Cl doping on the structural, morphological, optical and electrical properties of the films was investigated. XRD patterns revealed that all the films exhibit hexagonal crystal structure with a preferential orientation along the (0 0 2 plane irrespective of the Cl doping level. The particle size value decreases from 22.03 nm to 18.12 nm with increase in Cl concentration. Optical band gap is blue-shifted from 2.48 eV to 2.73 eV with increase in Cl doping concentration. All the films have resistivity in the order of 104 Ω cm. The obtained results confirm that chlorine as an anionic dopant material can enhance the physical properties of CdS thin films to a large extent.

Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films

NARCIS (Netherlands)

García-Revilla, S.; Valiente, R.; Romanyuk, Y.E.; Utke, I.; Pollnau, Markus

KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed. Obtained results were compared with spectra given for bulk crystals. Upconversion experiments after direct Yb3+ excitation

Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-02-28

We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

Science.gov (United States)

Amin, N. Mohd; Ng, S. S.

2018-01-01

Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

Science.gov (United States)

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

Structural characterization and oxygen nonstoichiometry of ceria-zirconia (Ce1−xZrxO2−δ) solid solutions

International Nuclear Information System (INIS)

Kuhn, M.; Bishop, S.R.; Rupp, J.L.M.; Tuller, H.L.

2013-01-01

The oxygen nonstoichiometry and crystalline structure of ceria-zirconia Ce 1−x Zr x O 2−δ (CZO) (x = 0.05, 0.1, 0.2, 0.5, and 0.8) solid solutions, commercially used as oxygen storage materials, have been examined using thermogravimetry, X-ray diffraction, and Raman spectroscopy. In this study detailed data describing oxygen vacancy concentrations, obtained at intermediate to high pO 2 , are interpreted with the aid of point defect equilibria relationships. For cubic CZO (x ⩽ 0.2), the ease of reducibility dramatically increased with increasing Zr content, as reflected by an ultimate >40% decrease in reduction enthalpy, with a corresponding shift in onset of reduction to higher pO 2 . The impact of pre-existing oxygen vacancies on the larger reduction enthalpy found for Y doped CZO, as compared with this study, is discussed, as is evidence that Zr increases the electron migration energy in ceria by 50%. The reducibility of tetragonal CZO (x > 0.2) was found to increase following redox cycling. This enhanced reducibility is believed to be related to ordering and is partially negated by a high temperature (1000 °C) heat treatment

Down-conversion luminescence and its temperature-sensing properties from Er3+-doped sodium bismuth titanate ferroelectric thin films

Science.gov (United States)

Wang, Shanshan; Zheng, Shanshan; Zhou, Hong; Pan, Anlian; Wu, Guangheng; Liu, Jun-ming

2015-11-01

Here, we demonstrate outstanding temperature-sensing properties from Na0.5Bi0.49Er0.01TiO3 (NBT:Er) thin films. The perovskite phase for them is stable in the temperature range from 80 to 440 K. Interestingly, the Er doping enhances the ferroelectric polarization and introduces local dipolar, which are positive for temperature sensing. Pumped by a 488-nm laser, the NBT:Er thin films show strong green luminescence with two bands around 525 and 548 nm. The intensity ratio I 525/ I 548 can be used for temperature sensing, and the maximum sensitivity is about 2.3 × 10-3 K-1, higher than that from Er-doped silicon oxide. These suggest NBT:Er thin film is a promising candidate for temperature sensor.

On direct internal methane steam reforming kinetics in operating solid oxide fuel cells with nickel-ceria anodes

Science.gov (United States)

Thallam Thattai, A.; van Biert, L.; Aravind, P. V.

2017-12-01

Major operating challenges remain to safely operate methane fuelled solid oxide fuel cells due to undesirable temperature gradients across the porous anode and carbon deposition. This article presents an experimental study on methane steam reforming (MSR) global kinetics for single operating SOFCs with Ni-GDC (gadolinium doped ceria) anodes for low steam to carbon (S/C) ratios and moderate current densities. The study points out the hitherto insufficient research on MSR global and intrinsic kinetics for operating SOFCs with complete Ni-ceria anodes. Further, it emphasizes the need to develop readily applicable global kinetic models as a subsequent step from previously reported state-of-art and complex intrinsic models. Two rate expressions of the Power law (PL) and Langmuir-Hinshelwood (LH) type have been compared and based on the analysis, limitations of using previously proposed rate expressions for Ni catalytic beds to study MSR kinetics for complete cermet anodes have been identified. Firstly, it has been shown that methane reforming on metallic (Ni) current collectors may not be always negligible, contrary to literature reports. Both PL and LH kinetic models predict significantly different local MSR reaction rate and species partial pressure distributions along the normalized reactor length, indicating a strong need for further experimental verifications.

Epitaxial stabilization of ultra thin films of electron doped manganites

Energy Technology Data Exchange (ETDEWEB)

Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-05-19

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

Directory of Open Access Journals (Sweden)

Hao-Min Xu

2016-11-01

Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing

International Nuclear Information System (INIS)

Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

2014-01-01

Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10 −2 Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. (papers)

Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-11-02

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.

Science.gov (United States)

Noda, Kei; Wada, Yasuo; Toyabe, Toru

2015-10-28

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

Tensile Strain Effects on the Magneto-transport in Calcium Manganese Oxide Thin Films: Comparison with its Hole-doped Counterpart

Science.gov (United States)

Lawson, Bridget; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Ferrone, Natalie; Houston, David; Yong, Grace; Kolagani, Rajeswari

Magnetoresistance properties of the epitaxial thin films of doped rare earth manganites are known to be influenced by the effect of bi-axial strain induced by lattice mismatch with the substrate. In hole-doped manganites, the effect of both compressive and tensile strain is qualitatively consistent with the expected changes in unit cell symmetry from cubic to tetragonal, leading to Jahn-Teller strain fields that affect the energy levels of Mn3 + energy levels. Recent work in our laboratory on CaMnO3 thin films has pointed out that tetragonal distortions introduced by tensile lattice mismatch strain may also have the effect of modulating the oxygen content of the films in agreement with theoretical models that propose such coupling between strain and oxygen content. Our research focuses on comparing the magneto-transport properties of hole-doped manganite LaCaMnO3 thin films with that of its electron doped counter parts, in an effort to delineate the effects of oxygen stoichiometry changes on magneto-transport from the effects of Jahn-Teller type strain. Towson University Office of Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grant from the Fisher College of Science and Mathematics, Seed Funding Grant from the School of Emerging technologies and the NSF Grant ECCS 112856.

An open circuit voltage equation enabling separation of cathode and anode polarization resistances of ceria electrolyte based solid oxide fuel cells

Science.gov (United States)

Zhang, Yanxiang; Chen, Yu; Yan, Mufu

2017-07-01

The open circuit voltage (OCV) of solid oxide fuel cells is generally overestimated by the Nernst equation and the Wagner equation, due to the polarization losses at electrodes. Considering both the electronic conduction of electrolyte and the electrode polarization losses, we express the OCV as an implicit function of the characteristic oxygen pressure of electrolyte (p* [atm], at which the electronic and ionic conductivities are the same), and the relative polarization resistance of electrodes (rc = Rc/Ri and ra = Ra/Ri, where Ri/c/a [Ωcm2] denotes the ionic resistance of electrolyte, and the polarization resistances of cathode and anode, respectively). This equation approaches to the Wagner equation when the electrodes are highly active (rc and ra → 0), and approaches to the Nernst equation when the electrolyte is a purely ionic conductor (p* → 0). For the fuel cells whose OCV is well below the prediction of the Wagner equation, for example with thin doped ceria electrolyte, it is demonstrated that the combination of OCV and impedance spectroscopy measurements allows the determination of p*, Rc and Ra. This equation can serve as a simple yet powerful tool to study the internal losses in the cell under open circuit condition.

Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

International Nuclear Information System (INIS)

Tsay, C.-Y.; Cheng, H.-C.; Tung, Y.-T.; Tuan, W.-H.; Lin, C.-K.

2008-01-01

In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 deg. C for 10 min and then annealed in air at 500 deg. C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10 2 Ω-cm

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

Energy Technology Data Exchange (ETDEWEB)

Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

2011-07-15

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

Science.gov (United States)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Structure and oxygen storage capacity of Pr-doped Ce0.26Zr0.74O2 mixed oxides

Institute of Scientific and Technical Information of China (English)

RAN Rui; WENG Duan; WU Xiaodong; FAN Jun; WANG Lei; WU Xiaodi

2011-01-01

Binary Ce-Zr (CZ),Pr-Zr (PZ) and ternary Ce-Zr-Pr (CZP) mixed oxides were prepared by an ammonia-aided co-precipitation method,and were aged in a steam/air flow at 1050 ℃.X-my diffraction (XRD),Raman spectra,X-photon spectra (XPS) and CO temperature programmed reduction (TPR) were carried out to characterize the micro-structure and reducibility of catalysts.The oxygen storage capacity (OSC) was evaluated with CO serving as probe gas.The results showed that a pseudo cubic structure was formed for the Zr-rich ceria-zirconia mixed oxides with Pr doping.The insertion of Pr prevented the phase segregation of the mixed oxides during the hydrothermal ageing.The Pr doped samples showed better redox performances in comparison with CZ,and the sample doped with 5 wt.％ Pr showed the most remarkably promoted dynamic oxygen storage capacity.This phenomenon was closely related to both the reducibility and oxygen mobility of the mixed oxides.The introduction of praseodymium into ceria-zirconia could accelerate the oxygen migration by increasing the amount of oxygen vacancies,although it was difficult for Pr3+ ions themselves to participate in the oxygen exchange process.

Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

Science.gov (United States)

Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

2018-05-01

In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

Science.gov (United States)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Microstructure and electric characteristics of AETiO3 (AE=Mg, Ca, Sr doped CaCu3Ti4O12 thin films prepared by the sol–gel method

Directory of Open Access Journals (Sweden)

Dong Xu

2015-10-01

Full Text Available This paper focuses on the effects of alkline-earth metal titante AETiO3 (AE=Mg, Ca, Sr doping on the microstructure and electric characteristics of CaCu3Ti4O12 thin films prepared by the sol–gel method. The results showed that the grain size of CCTO thin films could be increased by MgTiO3 doping. The movement of the grain boundaries was impeded by the second phases of CaTiO3 and SrTiO3 concentrating at grain boundaries in CaTiO3 and SrTiO3 doped CCTO thin films. Rapid ascent of dielectric constant could be observed in 0.1Mg TiO3 doped CCTO thin films, which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be observed. In addition, the nonlinear coefficient (α, threshold voltage (VT and leakage current (IL of AETiO3 doped CCTO thin films (AE=Mg, Ca, Sr showed different variation with the increasing content of the MgTiO3, CaTiO3 and SrTiO3.

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

Science.gov (United States)

Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Optical, structural and photocatalysis properties of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Bensouici, F., E-mail: fbensouici@yahoo.fr [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Bououdina, M.; Dakhel, A.A. [Department of Physics, College of Science, University of Bahrain, PO Box 32038 (Bahrain); Tala-Ighil, R.; Tounane, M.; Iratni, A. [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Souier, T. [Department of Physics, College of Science, Sultan Qaboos University, PO Box 36 (Oman); Liu, S.; Cai, W. [Key laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Technology, Center for Environmental and Energy Nanomaterials, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2017-02-15

Highlights: • A simple chemical route to obtain thin layers of Cu doped TiO{sub 2}. • Detailed structure analysis was carried out by Rietveld refinements. • Forming the CuO phase decreases the efficiency photocatalysis of TiO{sub 2}. - Abstract: Pure and Cu{sup +2} doped TiO{sub 2} thin films have been successfully deposited onto glass substrate by sol–gel dip-coating. The films were annealed at 450 °C for 1 h and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM-EDX), atomic force microscopy (AFM), UV–vis spectrophotometer and photocatalytic degradation of methylene blue. XRD confirmed the presence of two phases at higher Cu concentration; TiO{sub 2} anatase and CuO. AFM analysis showed that the surface roughness increases within increasing Cu content as well as the presence of large aggregates at higher Cu content. SEM observations confirmed the granular structure of the films, and EDX analysis revealed a low solubility limit (effective doping) of Cu into TiO{sub 2} lattice. It was found that the optical band gap energy decreases with increasing Cu content. At constant irradiation time, the photo-degradation of methylene blue rate decreased with increasing concentration of Cu{sup +2}.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin Films

NARCIS (Netherlands)

Zhang, W.; Jiang, S.; Wong, P.K.J.; Sun, Li; Wang, Y.K.; Wang, Kai; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; van der Laan, G.; Zhai, Y.

2014-01-01

By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd

Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

Directory of Open Access Journals (Sweden)

Rattanakorn Saensak

2014-03-01

Full Text Available This work reports characterizations of diamond-like carbon (DLC films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN63-/Fe(CN64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

Nanostructured thin film La{sub 0.6}Sr{sub 0.4}CoO{sub 3-δ} synthesized via salt-assisted spray pyrolysis for micro-SOFC application

Energy Technology Data Exchange (ETDEWEB)

Benel, Cahit; Darbandi, Azad J. [Institute for Nanotechnology, Karlsruhe Institute of Technology (Germany); Joint Research Laboratory Nanomaterials/Technische Universitaet Darmstadt and Karlsruhe Institute of Technology (Germany); Center for Functional Nanostructures, Karlsruhe Institute of Technology (Germany); Evans, Anna; Toelke, Rene [Nonmetallic Inorganic Materials, Department of Materials, ETH Zurich (Switzerland); Hahn, Horst [Institute for Nanotechnology, Karlsruhe Institute of Technology (Germany); Joint Research Laboratory Nanomaterials/Technische Universitaet Darmstadt and Karlsruhe Institute of Technology (Germany)

2012-07-01

Micro-solid oxide fuel cells (micro-SOFCs) are anticipated for battery replacement due to their increased energy capacity for applications such as portable electronic devices, mobile phones and laptops. In this work, nanocrystalline La{sub 0.6}Sr{sub 0.4}CoO{sub 3-δ} (LSC) powder with ultrafine microstructure and high specific surface area was synthesized via salt-assisted spray pyrolysis method. XRD results show the formation of a nanocrystalline single phase perovskite structure. Agglomerate-free LSC nanoparticles were stabilized in water-based dispersion without the need of ultrasonic energy application. Nanoparticulate cathode thin films of LSC with thickness between 150 and 500 nm were prepared via single step spin coating on yttria stabilized zirconia (YSZ) substrates. Gadolinium doped ceria (GDC) film was applied to YSZ substrate to avoid the chemical reaction between cathode and electrolyte. The performance of the thin film cathodes was evaluated by high temperature impedance spectroscopy on symmetrical samples.

Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

KAUST Repository

Baras, Abdulaziz

2011-07-01

Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

Modeling flux pinning in thin undoped and BazRo3-doped YBCO films

DEFF Research Database (Denmark)

Paturi, P.; Irjala, M.; Huhtinen, H.

2009-01-01

A simple model based on distributions of twin boundaries, dislocations, and BaZrO3 nanorods is presented to describe the Jc properties of undoped and BaZrO3 (BZO)-doped YBa2Cu3Ox thin films. The model accurately describes the shape of Jc(B,T) curves of the films, when the pinning site distributions...... are taken from distributions of twin spacings and BZO nanorods from transmission electron microscope images. Thus, assuming that the model can be used for prediction of the Jc properties, we conclude that for enhancement of undoped films more crystalline defects are needed and for doped films a dopant...

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Science.gov (United States)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

Science.gov (United States)

Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

2017-10-01

We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

Directory of Open Access Journals (Sweden)

Hiroshi Tsuji

2017-06-01

Full Text Available The effects of silicon doping on the properties of Zn-O-N (ZnON films and on the device characteristics of ZnON thin-film transistors (TFTs were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.

Photocatalytic performance of Sn-doped and undoped TiO2 nanostructured thin films under UV and vis-lights

International Nuclear Information System (INIS)

Arpac, E.; Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, Nadir; Sayilkan, H.

2007-01-01

Sn-doped and undoped nano-TiO 2 particles have been synthesized by hydrotermal process without solvent at 200 deg. C in 1 h. Nanostructure-TiO 2 based thin films have been prepared on glass substrate by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, SEM, BET and UV-vis-NIR techniques. The photocatalytic performance of the films were tested for degradation of Malachite Green dye in solution under UV and vis-lights. The results showed that (a) hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water, (b) the coated surfaces have nearly super-hydrophilic properties and (c) the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO 2 thin film

Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Wilson, K.C., E-mail: wilsonphy@gmail.com [Department of Physics, Govt. Polytechnic College Kothamangalam, Chelad P O, Ernakulam, Kerala 686681 (India); Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India); Basheer Ahamed, M. [Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India)

2016-01-15

Graphical abstract: - Highlights: • Novel honey comb like cadmium sulfide thin film nanostructures prepared using chemical bath deposition on glass substrates. • Honey comb nanostructure found in two layers: an ultra thin film at bottom and well inter connected with walls of < 25 nm thick on top; hence maximum surface area possible for CdS nanostructure. • Shell size of the nanostructures and energy band gaps were controlled also an enhanced persistent conductivity observed on Sn doping. - Abstract: Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like “plum pudding”. Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

Science.gov (United States)

Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

2018-03-01

Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

Catalytic Oxidation of Toluene on Hydrothermally Prepared Ceria Nanocrystals

Directory of Open Access Journals (Sweden)

M. Duplančić

2018-01-01

Full Text Available Ceria nanocrystals were prepared hydrothermally and tested as potential catalysts for oxidation of volatile organic compounds using toluene as a model compound. Pure ceria with a crystallite size of 4 nm, determined by the Scherrer method from XRD pattern has been obtained. The specific surface area of the prepared nanoparticles determined by BET analysis yielded 201 m2 g–1, while the band gap of 3.2 eV was estimated from DRS spectrum via Tauc’s plot. Catalytic tests were performed on calcined ceria (500 °C with increased crystallite size (9 nm caused by thermal treatment. The tests showed good activities for the toluene oxidation with T50 temperatures, corresponding to 50 % toluene conversion, observed at 250 °C and even lower temperatures depending on the total flow rate of the gas mixture. The one-dimensional pseudo-homogeneous model of the fixed bed reactor was proposed to describe the reactor performance and the appropriate kinetic parameters were estimated. Good agreement between experimental data and the proposed model was observed.

Fabrication and electrical resistivity of Mo-doped VO2 thin films coated on graphite conductive plates by a sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Choi, W.; Jung, H.M.; Um, S. [Hanyang Univ., Seoul (Korea, Republic of). School of Mechanical Engineering

2008-07-01

Vanadium oxides (VO2) can be used in optical devices, thermochromic smart windows and sensors. This paper reported on a study in which vanadium pentoxide (V2O5) powder was prepared and mixed with Molybdenum Oxides (MoO3) to form Mo-doped and -undoped VO2 thin films by a sol-gel method on graphite conductive substrates. The micro-structure and chemical compositions of the Mo-doped and -undoped VO2 thin films was investigated using X-Ray diffraction and scanning electron microscopy. Changes in electrical resistivity were measured as a function of the stoichiometric compositions between vanadium and molybdenum. In this study. Mo-doped and -undoped VO2 thin films showed the typical metal to insulator transition (MIT), where temperature range could be adjusted by modifying the dopant atomic ratio. The through-plane substrate structure of the Mo-doped layer influences the electrical resistivity of the graphite substrate. As the amount of the molybdenum increases, the electrical resistivity of the graphite conductive substrate decreases in the lower temperature range below the freezing point of water. The experimental results showed that if carefully controlled, thermal dissipation of VO2 thin films can be used as a self-heating source to melt frozen water with the electrical current flowing through the graphite substrate. 3 refs., 3 figs.

Magnetic and structural study of Cu-doped TiO2 thin films

International Nuclear Information System (INIS)

Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

2007-01-01

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

Effects of Ba doping on physical properties of La-Ca-Mn-O thin films

CERN Document Server

Hong, N H; Sakai, J; Iwasaki, H

2003-01-01

Transport and magnetic properties of La-Ba-Ca-Mn-O thin films fabricated by the pulsed laser deposition technique had been investigated systematically to see the effects of substitution of the small atom Ca by Ba which is much bigger. The induced insulator-to-metal (IM) transition was obtained not only in compositions near 0.5 and 0.18 which are boundaries between metallic and insulating phases but also in the heavily doped region. In the region of x > 0.5, the Ba doping causes an anomalous response of the system to the magnetic field and a positive magnetoresistance was observed. Besides, our results concerning the vicinity of 0.5 imply the existence of phase separation. As for x < 0.5, the doping enhances remarkably the paramagnetism-ferromagnetism transition and the IM transition temperatures.

Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

OpenAIRE

Arpana Agrawal; Tanveer Ahmad Dar; Pratima Sen

2013-01-01

The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight) thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies...

All-organic polymer-dispersed liquid crystal light-valves integrated with electroactive anthraquinone-2-sulfonate-doped polypyrrole thin films as driving electrodes

International Nuclear Information System (INIS)

Wang, Pen-Cheng; Yu, Jing-Yu; Li, Kuan-Hsun

2011-01-01

Highlights: → Fabrication of flexible semi-transparent all-polymer electrodes under ambient conditions without using a CVD system. → Characterization of the above electrodes based on anthraquinone-2-sulfonate-doped polypyrrole thin films. → Demonstration of all-organic liquid crystal light-valves with polypyrrole thin films as the driving electrodes. - Abstract: All-organic PDLC (polymer-dispersed liquid crystal) light-valves using all-polymer conductive substrates containing thin films of polypyrrole doped with anthraquinone-2-sulfonate (AQSA - ) as the driving electrodes were fabricated in this study. The all-polymer conductive substrates were prepared under ambient conditions by in situ depositing polypyrrole thin films on blank flexible poly(ethylene terephthalate), or PET, substrates from aqueous media in which oxidative polymerization of pyrrole was taking place. The obtained flexible all-polymer conductive substrates were semi-transparent with cohesive coatings of AQSA - doped polypyrrole thin films (thickness ∼55 nm). The all-polymer flexible conductive substrates had sheet resistivity ∼40 kΩ □ -1 and T% transparency against air ∼78% at 600 nm. The light-valves fabricated using the above all-polymer conductive substrates showed ∼50% transparency against air at 600 nm when 4 V μm -1 electric field was applied.

Sub-nA spatially resolved conductivity profiling of surface and interface defects in ceria films

Directory of Open Access Journals (Sweden)

Tim Farrow

2015-03-01

Full Text Available Spatial variability of conductivity in ceria is explored using scanning probe microscopy with galvanostatic control. Ionically blocking electrodes are used to probe the conductivity under opposite polarities to reveal possible differences in the defect structure across a thin film of CeO2. Data suggest the existence of a large spatial inhomogeneity that could give rise to constant phase elements during standard electrochemical characterization, potentially affecting the overall conductivity of films on the macroscale. The approach discussed here can also be utilized for other mixed ionic electronic conductor systems including memristors and electroresistors, as well as physical systems such as ferroelectric tunneling barriers.

1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

Science.gov (United States)

Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

2018-05-01

A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

Morphology and formation mechanism of ceria nanoparticles by spray pyrolysis

International Nuclear Information System (INIS)

Shih, Shao-Ju; Wu, Ying-Ying; Chen, Chin-Yi; Yu, Chin-Yang

2012-01-01

Ceria-based materials are used in industrial applications such as catalyst supports, carbon monoxide reduction catalysts, and solid oxide fuel cell electrolytes. Various applications require different morphological particles. The ceria particles with various morphologies from the precursors of cerium(III) acetate hydrate, cerium(IV) nitrate hydrate, and cerium(IV) ammonium nitrate were prepared by spray pyrolysis (SP) because SP has the potential for simple and continuous process. The precursor behaviors and the particle morphologies were characterized by thermogravimetric analysis and by transmission electron microscopy. Four main morphologies of solid spherical, hollow spherical with a single pore, hollow concave, and hollow spherical with multiple pores were observed. The experimental results suggest that the morphological formation mechanism is highly correlated with the factors of precursor solubilities, solvent evaporation rates (droplet diameters), and precursor melting temperatures. In addition, total concentrations of cerium(III) in the ceria particles from various precursors were examined using X-ray photoelectron spectroscopy.

Yttria-Ceria stabilized tetragonal zirconia polycrystals: Sintering, grain growth and grain boundary segregation

NARCIS (Netherlands)

Boutz, M.M.R.; Boutz, M.M.R.; Winnubst, Aloysius J.A.; Burggraaf, Anthonie; Burggraaf, A.J.

1994-01-01

An analysis is presented of grain growth and densification of yttria-ceria stabilized tetragonal zirconia polycrystals (Y, Ce-TZPs) using both isothermal and non-isothermal techniques. The characteristics of Y, Ce-TZPs are compared to those of Y-TZP and Ce-TZP and the effect of increasing ceria

Characterization of Sn Doped ZnS thin films synthesized by CBD

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Ayan; Mitra, Partha, E-mail: mitrapartha1@rediffmail.com [Department of Physics, The University of Burdwan, Burdwan (India)

2017-03-15

Zinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Rietveld analysis using MAUD software was used for particle size estimation. A constantly decreasing trend in particle size was observed with increasing tin incorporation in ZnS film which was due to enhanced microstrain resulting for tin incorporation. The particle size of prepared hexagonal wurtzite ZnS was around 14-18 nm with average size of ~16.5 nm. The bandgap of the film increases from ~ 3.69 eV for ZnS to ~ 3.90 eV for 5% Sn doped ZnS film which might be due to more ordered hexagonal structure as a result of tin incorporation. Band gap tenability property makes Sn doped ZnS suitable for application in different optoelectronics devices. PL study shows variation of intensity with excitation wavelength and a red shift is noticed for increasing excitation wavelength. (author)

Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

2014-12-15

(200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

2016-04-30

Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

Synthesis, microstructure and mechanical properties of ceria ...

Indian Academy of Sciences (India)

Unknown

ceria stabilized zirconia powders with improved mechanical properties. Ce–ZrO2 with 20 wt% ... structural ceramic materials (Garvie et al 1975; Evans and. Cannon 1986) ... thermal expansion matching with that of iron alloys. (Tsukuma and ...

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

International Nuclear Information System (INIS)

Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

2015-01-01

Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)

2015-01-01

The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.

Phosphorus-doped thin silica films characterized by magic-angle spinning nuclear magnetic resonance spectroscopy

DEFF Research Database (Denmark)

Jacobsen, H.J.; Skibsted, J.; Kristensen, Martin

2001-01-01

Magic-angle spinning nuclear magnetic resonance spectra of 31P and 29Si have been achieved for a thin silica film doped with only 1.8% 31P and deposited by plasma enhanced chemical vapor deposition on a pure silicon wafer. The observation of a symmetric 31P chemical shift tensor is consistent...

Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis

International Nuclear Information System (INIS)

Gokulakrishnan, V.; Parthiban, S.; Jeganathan, K.; Ramamurthi, K.

2011-01-01

Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 o C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 o C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 x 10 -3 Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.

Multicomponent doped barium strontium titanate thin films for tunable microwave applications

Science.gov (United States)

Alema, Fikadu Legesse

In recent years there has been enormous progress in the development of barium strontium titanate (BST) films for tunable microwave applications. However, the properties of BST films still remain inferior compared to bulk materials, limiting their use for microwave technology. Understanding the film/substrate mismatch, microstructure, and stoichiometry of BST films and finding the necessary remedies are vital. In this work, BST films were deposited via radio frequency magnetron sputtering method and characterized both analytically and electrically with the aim of optimizing their properties. The stoichiometry, crystal structure, and phase purity of the films were studied by varying the oxygen partial pressure (OPP) and total gas pressure (TGP) in the chamber. A better stoichiometric match between film and target was achieved when the TGP is high (> 30 mTorr). However, the O2/Ar ratio should be adjusted as exceeding a threshold of 2 mTorr in OPP facilitates the formation of secondary phases. The growth of crystalline film on platinized substrates was achieved only with a lower temperature grown buffer layer, which acts as a seed layer by crystallizing when the temperature increases. Concurrent Mg/Nb doping has significantly improved the properties of BST thin films. The doped film has shown an average tunability of 53%, which is only ˜8 % lower than the value for the undoped film. This drop is associated with the Mg ions whose detrimental effects are partially compensated by Nb ions. Conversely, the doping has reduced the dielectric loss by ˜40 % leading to a higher figure of merit. Moreover, the two dopants ensure a charge neutrality condition which resulted in significant leakage current reduction. The presence of large amounts of empty shallow traps related to Nb Ti localize the free carriers injected from the contacts; thus increase the device control voltage substantially (>10 V). A combinatorial thin film synthesis method based on co-sputtering of two BST

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

OpenAIRE

Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Science.gov (United States)

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

2018-03-01

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Effect of Mn doping on the structural and optical properties of ZrO2 thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.

2014-01-01

Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap

The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

International Nuclear Information System (INIS)

Rahal Achour; Benramache Said; Benhaoua Boubaker

2013-01-01

This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO 2 :F thin films were deposited at a 350 °C pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO 2 :F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm) −1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO 2 :F thin films deposited by ultrasonic spray was reported. (semiconductor materials)

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.; Cha, Dong Kyu; Alshareef, Husam N.

2011-01-01

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single

Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

Science.gov (United States)

Guo, Daoyou; Qin, Xinyuan; Lv, Ming; Shi, Haoze; Su, Yuanli; Yao, Guosheng; Wang, Shunli; Li, Chaorong; Li, Peigang; Tang, Weihua

2017-11-01

Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.[Figure not available: see fulltext.

Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

International Nuclear Information System (INIS)

Mehta, B.R.

2009-01-01

Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

High-performance thermal sensitive W-doped VO{sub 2}(B) thin film and its identification by first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Wan, Dongyun; Xiong, Ping; Chen, Lanli [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Shi, Siqi, E-mail: sqshi@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Ishaq, Ahmad [National Center for Physics, Quaid-I-Azam University, Islamabad 44000 (Pakistan); Luo, Hongjie [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Gao, Yanfeng, E-mail: yfgao@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

2017-03-01

Graphical abstract: VO{sub 2}(B) thin films with high TCR and suitable resistance were first achieved by W doping. The mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO{sub 2}(B) favors the strain control with W-doping for achieving a large TCR, which overcomes the contradiction between the high conductivity and large TCR generated by dopants in VO{sub 2}(M). - Highlights: • High performance W-doped VO{sub 2}(B) thin films were first achieved by co-sputtering. • Mechanism for performance improvement was studied by first-principles calculations. • The two-dimensional octahedral structure of VO{sub 2} (B) favors the strain control. • Achieved VO{sub 2} films possess high thermal sensitivity (TCR: −3.9%/K & R{sub 0}: 32.7 kΩ). - Abstract: VO{sub 2}(B) is currently a preferred phase structure for the application as bolometer material, which, however, suffers from low temperature-coefficient-of-resistance (TCR) values and large resistances. Here we present the combined experimental and first-principles calculations study on both doped and undoped VO{sub 2}(B) thin films enabling us to attain high TCR (−3.9%/k) and suitable square-resistance (32.7 kΩ) by controlled W doping employing the widely used magnetron sputtering technique. The TCR value is 50% larger than reported ones at the similar resistance. The underlying microscopic mechanism for the performance improvement was studied and results indicated that the introduction of extra electrons and the variation in the band structure resulting from the incorporation of W{sup 6+} ions in the VO{sub 2}(B) crystal lattice contribute to the enhancement of the electronic conductivity. Moreover, the special two-dimensional octahedral structure of monoclinic (C2/m) B-phase VO{sub 2} favors the strain control with W-doping for achieving a large TCR, which overcomes the analogous predicament between the high conductivity and large TCR

Characteristics and optical properties of iron ion (Fe{sup 3+})-doped titanium oxide thin films prepared by a sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Wang, M.C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan (China); Lin, H.J. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)], E-mail: hjlin@nuu.edu.tw; Yang, T.S. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2009-04-03

Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations have been prepared on a glass substrate by the sol-gel spin coating process. Characteristics and optical properties of TiO{sub 2} thin films doping of various Fe content were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry. The crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0 to 25.0 wt%. During the Fe{sup 3+} addition to 25.0 wt%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The absorption edge of TiO{sub 2} thin films shifted towards longer wavelengths (i.e. red shifted) from 355 to 415 nm when the Fe{sup 3+}-doped concentration increased from 0 to 25.0 wt%. The values of the refractive index (n), and extinction coefficient (k), decreased with an increasing Fe{sup 3+} content. Moreover, the band-gap energy of TiO{sub 2} thin films also decreased from 3.29 to 2.83 eV with an increase in the Fe{sup 3+} content from 0 to 25.0 wt%.

Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Karaagac, Hakan, E-mail: hkaraagac@ucdavis.edu [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States); Yengel, Emre; Saif Islam, M. [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States)

2012-04-25

Highlights: Black-Right-Pointing-Pointer Undoped and Al doped ZnO (AZO) thin films were successfully prepared using sol-gel technique. Black-Right-Pointing-Pointer Structural analysis has revealed that Al doping has a significant influence on preferential orientation. Black-Right-Pointing-Pointer It has been observed that wrinkles forms on the surface of films when annealed with a fast heat ramp up rate. Black-Right-Pointing-Pointer Optical analysis has revealed that that the band gap energy of ZnO thin film increases with increasing Al doping concentration. Black-Right-Pointing-Pointer The lowest resistivity is observed for 1% Al ZnO thin film, which is 2.2 Multiplication-Sign 10{sup -2} ({Omega} cm). - Abstract: ZnO and some of its ternary wide-bandgap alloys offer interesting opportunities for designing materials with tunable band gaps, strong piezoresistivity and controlled electrical conductance with high optical transparency. Synthesizing these materials on arbitrary substrates using low-cost and unconventional techniques can help in integrating semiconductors with different physical, electrical, and optical characteristics on a single substrate for heterogeneous integration of multifunctional devices. Here we report the successful synthesis of aluminum (Al) doped ZnO (AZO) thin films on soda-lime glass, silicon and fluorine doped tin oxide (FTO) pre-coated glass substrates by using sol-gel deposition method at ambient condition. X-ray diffraction (XRD) analysis revealed that varying degree of Al doping significantly impacts the crystal orientation, semiconductor bandgap and optical transparency of the film. Crystal structure of the film is also found to be strongly correlated to the characteristics of the substrate material. The impact of heating rate during post annealing process is studied and optimized in order to improve the surface morphology of the deposited films. Optical characterizations have revealed that bandgap energy of AZO films can be tuned

Enhanced photoelectrochemical performance of Ti-doped hematite thin films prepared by the sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Lian Xiaojuan; Yang Xin; Liu Shangjun; Xu Ying; Jiang Chunping; Chen Jinwei [College of Materials Science and Engineering, Sichuan University, No.24 South Section 1, Yihuan Road, Chengdu 610065 (China); Wang Ruilin, E-mail: rlwang26@yahoo.com.cn [College of Materials Science and Engineering, Sichuan University, No.24 South Section 1, Yihuan Road, Chengdu 610065 (China)

2012-01-15

Ti-doped {alpha}-Fe{sub 2}O{sub 3} thin films were successfully prepared on FTO substrates by the sol-gel route. Hematite film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS). The XRD data showed {alpha}-Fe{sub 2}O{sub 3} had a preferred (1 1 0) orientation which belonged to the rhombohedral system. Interestingly, the grains turned into worm-like shape after annealed at high temperature. The IPCE could reach 32.6% at 400 nm without any additional potential vs. SCE. Titanium in the lattice can affect the photo electro chemical performance positively by increasing the conductivity of the thin film. So the excited electrons and holes could live longer, rather than recombining with each other rapidly as undoped hematite. And the efficient carrier density on the Ti-doped anode surface was higher than the undoped anode, which contribute to the well PEC performance.

Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Science.gov (United States)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Chemical bath deposition of Hg doped CdSe thin films and their characterization

International Nuclear Information System (INIS)

Bhuse, V.M.

2005-01-01

The deliberate addition of Hg in CdSe thin film have been carried out using a simple, modified, chemical bath deposition technique with the objective to study the effect of Hg doping on properties of CdSe thin films. Synthesis was initiated at 278 K temperature using complexed cadmium sulphate, mercuric nitrate and sodium selenosulphate in an aqueous ammonical medium at pH 10. Films were characterized by XRD, SEM, optical absorption, electrical and thermoelectric techniques. The 'as deposited' films were uniform, well adherent, nearly stoichiometric and polycrystalline in a single cubic phase (zinc blende). Crystallite size determined from XRD and SEM was found to increase slightly with addition of Hg. The optical band gap of CdSe remains constant upto 0.05 mol% Hg doping, while it decreases monotonically with further increase in mercury content. Dark dc electrical resistivity and conduction activation energy of CdSe were found to decrease initially upto 0.05 mol% of Hg, thereafter increased for higher values of Hg but remains less than those of CdSe. All the films showed n-type of conductivity. A CdSe film containing 0.05 mol% of Hg showed higher absorption coefficient, and conductivity

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Characteristics of hydrogen co-doped ZnO : Al thin films

International Nuclear Information System (INIS)

Lee, S H; Lee, T S; Lee, K S; Cheong, B; Kim, W M; Kim, Y D

2008-01-01

ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al 2 O 3 on Corning glass at a substrate temperature of 150 deg. C with Ar and H 2 /Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H 2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H 2 . The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H 2 content in sputter gas. Annealing at 300 deg. C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications

Effect of Secondary Doping Using Sorbitol on Structure and Transport Properties of PEDOT-PSS Thin Films