Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.
Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G
2017-08-23
We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.
International Nuclear Information System (INIS)
Allende, S.; Retamal, J.C.; Altbir, D.; D'Albuquerque e Castro, J.
2014-01-01
The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved
Energy Technology Data Exchange (ETDEWEB)
Allende, S.; Retamal, J.C. [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); Altbir, D., E-mail: dora.altbir@usach.cl [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); D' Albuquerque e Castro, J. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro 21941-972 (Brazil)
2014-04-15
The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved.
International Nuclear Information System (INIS)
Rodriguez-Rodriguez, G; Perez-Junquera, A; Hierro-Rodriguez, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D
2010-01-01
Domain wall propagation has been studied in perpendicular anisotropy CoPt multilayers patterned by e-beam lithography into 5 μm wide wires. Positive and negative peaks appear in time resolved magnetoresistance curves, associated to the different directions of domain wall propagation along the wires. The field dependence of domain wall velocity is well described by a creep model of a 1D wall in the presence of weak disorder with critical exponent μ=1/4.
Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy
Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.
2017-01-01
We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of
Magnetoresistance of microstructured permalloy ellipses having multi-domain configurations
International Nuclear Information System (INIS)
Kuo, C.Y.; Chung, W.S.; Wu, J.C.; Horng, Lance; Wei, Z.-H.; Lai, M.-F.; Chang, C.-R.
2007-01-01
Mirostructured permalloy ellipses having purposely designed multi-domain configurations were investigated. The samples were fabricated using e-beam lithography through a lift-off process. The magnetoresistance measurements were carried out with a constant dc sensing current under the external magnetic field applied along the short axis. The magnetoresistance curves manifest characteristic features in accordance with the specific domain configurations. Step-like/kink features were observed on the ellipses with cross-tie wall/two-vortex configuration and step-like plus kink magnetorsistance curve was found on the ellipse with cross-tie wall combining with two-vortex structure. A magnetic force microscopy and a micromagnetic simulation were employed to support these results
Anisotropy of domain wall resistance
Viret; Samson; Warin; Marty; Ott; Sondergard; Klein; Fermon
2000-10-30
The resistive effect of domain walls in FePd films with perpendicular anisotropy was studied experimentally as a function of field and temperature. The films were grown directly on MgO substrates, which induces an unusual virgin magnetic configuration composed of 60 nm wide parallel stripe domains. This allowed us to carry out the first measurements of the anisotropy of domain wall resistivity in the two configurations of current perpendicular and parallel to the walls. At 18 K, we find 8.2% and 1.3% for the domain wall magnetoresistance normalized to the wall width (8 nm) in these two respective configurations. These values are consistent with the predictions of Levy and Zhang.
Individual domain wall resistance in submicron ferromagnetic structures.
Danneau, R; Warin, P; Attané, J P; Petej, I; Beigné, C; Fermon, C; Klein, O; Marty, A; Ott, F; Samson, Y; Viret, M
2002-04-15
The resistance generated by individual domain walls is measured in a FePd nanostructure. Combining transport and magnetic imaging measurements, the intrinsic domain wall resistance is quantified. It is found positive and of a magnitude consistent with that predicted by models based on spin scattering effects within the walls. This magnetoresistance at a nanometer scale allows a direct counting of the number of walls inside the nanostructure. The effect is then used to measure changes in the magnetic configuration of submicron stripes under application of a magnetic field.
Directory of Open Access Journals (Sweden)
V. Fallahi
2012-06-01
Full Text Available The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls can be controlled through the domain walls separation. Also, we have represented another alternative way that enables us to handle easily the magnetoresistance of such a system as well as its conductance by utilizing the Rashba-type spin-orbit interaction induced by the external gates.
Magnetization reversal in ferromagnetic spirals via domain wall motion
Schumm, Ryan D.; Kunz, Andrew
2016-11-01
Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a ferromagnetic spiral nanowire. The spiral geometry is capable of taking advantage of the benefits of both straight and circular wires. Measurements of the in-plane components of the spirals' magnetization can be used to determine the angular location of the domain wall, impacting the magnetoresistive applications dependent on the domain wall location. The spirals' magnetization components are found to depend on the spiral parameters: the initial radius and spacing between spiral arms, along with the domain wall location. The magnetization is independent of the parameters of the rotating field used to move the domain wall, and therefore the model is valid for current induced domain wall motion as well. The speed of the domain wall is found to depend on the frequency of the rotating driving field, and the domain wall speeds can be reliably varied over several orders of magnitude. We further demonstrate a technique capable of injecting multiple domain walls and show the reliable and unidirectional motion of domain walls through the arms of the spiral.
Domain Wall Formation in Ferromagnetic Layers: An Ab Initio Study
Herper, Heike C.
Domain walls are an inherent feature of ferromagnetic (FM) films consisting of layers with different magnetic orientations. Since FM films are used in electrical devices the question of the influence of domain walls on, e.g., the magnetoresistance has attracted much interest. Besides discussing the resistance contribution of domain walls, it is appropriate to study different types of domain walls and their energy of formation. The behaviour of domain walls is usually discussed within model calculations. In the present paper it is done within an ab initio Green's function technique for layered systems, i.e., the fully relativistic, spin-polarized screened Korringa-Kohn Rostoker method. Results are presented for fcc Co layers covered by two semi-infinite fcc Pt(001) bulk systems or by bulk fcc Co(001), respectively. The resistance, which is caused by the different types of domain walls is discussed within a Kubo-Greenwood approach considering Co(001)/Co24/Co(001) as an example.
Stripe domains and magnetoresistance in thermally deposited nickel films
International Nuclear Information System (INIS)
Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.
2004-01-01
We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane
Stripe domains and magnetoresistance in thermally deposited nickel films
Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.
2004-05-01
We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.
Stripe domains and magnetoresistance in thermally deposited nickel films
Energy Technology Data Exchange (ETDEWEB)
Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C
2004-05-01
We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.
The Effect of a Pulsed Magnetic Field on Domain Wall Resistance in Magnetic Nanowires
Energy Technology Data Exchange (ETDEWEB)
Majidi, R; Tehranchi, M M; Tabrizi, K Ghafoori [Department of Physics, G.C., Shahid Beheshti University, Evin, 19838-63113, Tehran (Iran, Islamic Republic of); Phirouznia, A, E-mail: Teranchi@cc.sbu.ac.ir [Department of Physics, Azarbaijan University of Tarbiat Moallem, 53714-161 Tabriz (Iran, Islamic Republic of)
2011-04-01
The effect of a pulsed magnetic field on domain wall magnetoresistance for an ideal one-dimensional magnetic nanowire with a domain wall has been investigated. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. The results indicate that the domain wall resistance increase when enhancing the magnetic field. The evaluation of local magnetization has been considered in the presence of a pulsed magnetic field. The time evaluation of the magnetization also has an effect on the domain wall resistance. The resistance depends on the contribution of the Zeeman and exchange interactions.
The Effect of a Pulsed Magnetic Field on Domain Wall Resistance in Magnetic Nanowires
International Nuclear Information System (INIS)
Majidi, R; Tehranchi, M M; Tabrizi, K Ghafoori; Phirouznia, A
2011-01-01
The effect of a pulsed magnetic field on domain wall magnetoresistance for an ideal one-dimensional magnetic nanowire with a domain wall has been investigated. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. The results indicate that the domain wall resistance increase when enhancing the magnetic field. The evaluation of local magnetization has been considered in the presence of a pulsed magnetic field. The time evaluation of the magnetization also has an effect on the domain wall resistance. The resistance depends on the contribution of the Zeeman and exchange interactions.
Fernández Scarioni, Alexander; Krzysteczko, Patryk; Sievers, Sibylle; Hu, Xiukun; Schumacher, Hans W.
2018-06-01
We study the resistive and thermopower signatures of a single domain wall in a magnetic nanowire in the temperature range from 4 K to 204 K. The results are compared to the anisotropic magnetoresistance (AMR) and anisotropic magneto-Seebeck (AMS) data of the whole permalloy nanowire. The AMS ratio of the nanowire reveals a sign change at a temperature of 98 K, while the AMR ratio is positive over the complete temperature range. This behavior is also observed for the domain wall, allowing an attribution of the measured signatures to the domain wall magneto-Seebeck and domain wall magnetoresistive contributions. However, the observed zero crossing of the AMS ratio, in both types of measurements is not expected for permalloy, since the Mott formula predicts a temperature dependency of the AMS identical to the AMR. We discuss the origin of this behavior and can attribute it to the contributions of the lead and the protective platinum layer used in our devices. A correction scheme is presented and applied. Such contributions could also play a role in the analysis of magneto-Seebeck effects in other nanoscale devices, such as the tunnel magneto-Seebeck effect of magnetic tunnel junctions.
Magnetoresistance of non-180° domain wall in the presence of electron-photon interaction
Majidi, Roya
2013-04-01
In the present paper, influence of photon on resistance of non-180° domain wall in metallic magnetic nanowires has been studied using the semiclassical approach. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type domain wall between two ferromagnetic domains with relative magnetization angle less than 180° is considered. By increasing this angle, the contribution of the domain wall in the resistivity of the nanowire becomes considerable. It is also found that the fundamental contribution of the domain wall in resistivity can be controlled by propagating photon. These results are valuable in designing spintronic devices based on magnetic nanowires.
International Nuclear Information System (INIS)
Hanada, R.; Sugawara, H.; Aoki, Y.; Sato, H.; Shigeto, K.; Shinjo, T.; Ono, T.; Miyajima, H.
2002-01-01
We have simultaneously measured the field dependences of voltages at multiple pairs of resistance and transverse voltage probes in ferromagnetic wires (with either magnetic or non-magnetic voltage probes). Both the resistive (through the giant magnetoresistance and anisotropic magnetoresistance) and transverse voltages (through the planar Hall effect) exhibit abrupt jumps, reflecting discrete motion of domain walls or rotations of magnetization. Voltage probes, even if non-magnetic, are found to affect the jump fields depending on the sample conditions. We demonstrate that the specific information on the domain (wall) motion along a thin ferromagnetic wire could be obtained from the jump fields. (author)
Magnetoresistance through spin-polarized p states
International Nuclear Information System (INIS)
Papanikolaou, Nikos
2003-01-01
We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone
Stability of a pinned magnetic domain wall as a function of its internal configuration
Energy Technology Data Exchange (ETDEWEB)
Montaigne, F.; Duluard, A.; Briones, J.; Lacour, D.; Hehn, M. [Institut Jean Lamour, Université de Lorraine, CNRS, BP 70239, F-54506 Vandoeuvre lès Nancy (France); Childress, J. R. [HGST San Jose Research Center, 3403 Yerba Buena Rd, San Jose, California 95135 (United States)
2015-01-14
It is shown that there are many stable configurations for a domain wall pinned by a notch along a magnetic stripe. The stability of several of these configurations is investigated numerically as a function of the thickness of the magnetic film. The depinning mechanism depends on the structure of the domain wall and on the thickness of the magnetic film. In the case of a spin-valve structure, it appears that the stray fields emerging from the hard layer at the notch location influence the stability of the micromagnetic configuration. Different depinning mechanisms are thus observed for the same film thickness depending on the magnetization orientation of the propagating domain. This conclusion qualitatively explains experimental magnetoresistance measurements.
Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.
Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S
2016-02-10
Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.
Lei, Na; Devolder, Thibaut; Agnus, Guillaume; Aubert, Pascal; Daniel, Laurent; Kim, Joo-Von; Zhao, Weisheng; Trypiniotis, Theodossis; Cowburn, Russell P; Chappert, Claude; Ravelosona, Dafiné; Lecoeur, Philippe
2013-01-01
The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices.
Mohammed, Hanan; Vidal, Enrique Vilanova; Ivanov, Yurii P.; Kosel, Jü rgen
2016-01-01
Magnetotransport measurements were performed on multisegmented Co/Ni nanowires fabricated by template-assisted electrodeposition. Individual nanowires were isolated and electrodes patterned to study their magnetization reversal process. The magnetoresistance reversal curve of the multisegmented nanowire exhibits a step in the switching field. Micromagnetic simulations of the magnetization reversal process are in agreement with the experimental findings and attribute the step at the switching field to the pinning of a domain wall at the interface of the Co/Ni nanowire.
Mohammed, Hanan
2016-03-01
Magnetotransport measurements were performed on multisegmented Co/Ni nanowires fabricated by template-assisted electrodeposition. Individual nanowires were isolated and electrodes patterned to study their magnetization reversal process. The magnetoresistance reversal curve of the multisegmented nanowire exhibits a step in the switching field. Micromagnetic simulations of the magnetization reversal process are in agreement with the experimental findings and attribute the step at the switching field to the pinning of a domain wall at the interface of the Co/Ni nanowire.
Anomalous magnetoresistance effect in sputtered TbFeCo relating to dispersed magnetic moment
International Nuclear Information System (INIS)
Yumoto, S.; Toki, K.; Okada, O.; Gokan, H.
1988-01-01
The electric resistance is sputtered TbFeCo has been measured at room temperature as a function of magnetic field perpendicular to the film plane. Two kinds of anomalous magnetoresistance have been observed. One is a magnetoresistance peak in the magnetization reversal region. The other is reversible change proportional to the applied magnetic field, appearing in the other region. The magnetoresistance peak agrees well with a curve calculated from experimental Hall loop, using a phenomenological relation between anomalous magnetoresistance and anomalous Hall voltage. The magnetoresistance peak is found to originate from magnetic domain walls. The linear magnetoresistance change for TM dominant samples appears in a direction opposite to that for RE dominant samples. The linear change can't be derived from Hall loop
PREFACE: Domain wall dynamics in nanostructures Domain wall dynamics in nanostructures
Marrows, C. H.; Meier, G.
2012-01-01
Domain structures in magnetic materials are ubiquitous and have been studied for decades. The walls that separate them are topological defects in the magnetic order parameter and have a wide variety of complex forms. In general, their investigation is difficult in bulk materials since only the domain structure on the surface of a specimen is visible. Cutting the sample to reveal the interior causes a rearrangement of the domains into a new form. As with many other areas of magnetism, the study of domain wall physics has been revitalised by the advent of nanotechnology. The ability to fabricate nanoscale structures has permitted the formation of simplified and controlled domain patterns; the development of advanced microscopy methods has permitted them to be imaged and then modelled; subjecting them to ultrashort field and current pulses has permitted their dynamics to be explored. The latest results from all of these advances are described in this special issue. Not only has this led to results of great scientific beauty, but also to concepts of great applicability to future information technologies. In this issue the reader will find the latest results for these domain wall dynamics and the high-speed processes of topological structures such as domain walls and magnetic vortices. These dynamics can be driven by the application of magnetic fields, or by flowing currents through spintronic devices using the novel physics of spin-transfer torque. This complexity has been studied using a wide variety of experimental techniques at the edge of the spatial and temporal resolution currently available, and can be described using sophisticated analytical theory and computational modelling. As a result, the dynamics can be engineered to give rise to finely controlled memory and logic devices with new functionality. Moreover, the field is moving to study not only the conventional transition metal ferromagnets, but also complex heterostructures, novel magnets and even other
Energy Technology Data Exchange (ETDEWEB)
Okuda, Mitsunobu, E-mail: okuda.m-ky@nhk.or.jp; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Hayashi, Naoto [NHK Science and Technology Research Laboratories, 1-10-11 Kinuta Setagaya, Tokyo 157-8510 (Japan)
2014-05-07
Current-driven magnetic domain wall motions in magnetic nanowires have attracted great interests for physical studies and engineering applications. The magnetic force microscope (MFM) is widely used for indirect verification of domain locations in nanowires, where relative magnetic force between the local domains and the MFM probe is used for detection. However, there is an occasional problem that the magnetic moments of MFM probe influenced and/or rotated the magnetic states in the low-moment nanowires. To solve this issue, the “magnetic domain scope for wide area with nano-order resolution (nano-MDS)” method has been proposed recently that could detect the magnetic flux distribution from the specimen directly by scanning of tunneling magnetoresistive field sensor. In this study, magnetic domain structure in nanowires was investigated by both MFM and nano-MDS, and the leakage magnetic flux density from the nanowires was measured quantitatively by nano-MDS. Specimen nanowires consisted from [Co (0.3)/Pd (1.2)]{sub 21}/Ru(3) films (units in nm) with perpendicular magnetic anisotropy were fabricated onto Si substrates by dual ion beam sputtering and e-beam lithography. The length and the width of the fabricated nanowires are 20 μm and 150 nm. We have succeeded to obtain not only the remanent domain images with the detection of up and down magnetizations as similar as those by MFM but also magnetic flux density distribution from nanowires directly by nano-MDS. The obtained value of maximum leakage magnetic flux by nano-MDS is in good agreement with that of coercivity by magneto-optical Kerr effect microscopy. By changing the protective diamond-like-carbon film thickness on tunneling magnetoresistive sensor, the three-dimensional spatial distribution of leakage magnetic flux could be evaluated.
Current-supported domain wall movement to the target spot with a magnetic field
International Nuclear Information System (INIS)
Nam, Chunghee; Jang, Y.M.; Lee, K.S.; Lee, S.K.; Kim, T.W.; Cho, B.K.
2007-01-01
Current-driven domain wall (DW) motion in a submicron-size magnetic strip, which consists of Cu/IrMn/NiFe/Cu/NiFe/Cu pseudo-spin-valve with natural defects, was investigated by measuring the giant-magnetoresistance signal. The magnetic DW movement was induced by the injection of a high current density of 4x10 7 A/cm 2 . It was also found that a DW can be manipulated in more convenient way by the application of both current and magnetic field at the same time
Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe{sub 3}O{sub 4} films
Energy Technology Data Exchange (ETDEWEB)
Yoon, Kap Soo [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
2017-02-01
We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe{sub 3}O{sub 4} films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe{sub 3}O{sub 4} films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.
Bergshoeff, Eric A.; Kleinschmidt, Axel; Riccioni, Fabio
2012-01-01
We classify the half-supersymmetric "domain walls," i.e., branes of codimension one, in toroidally compactified IIA/IIB string theory and show to which gauged supergravity theory each of these domain walls belong. We use as input the requirement of supersymmetric Wess-Zumino terms, the properties of
Topological domain walls in helimagnets
Schoenherr, P.; Müller, J.; Köhler, L.; Rosch, A.; Kanazawa, N.; Tokura, Y.; Garst, M.; Meier, D.
2018-05-01
Domain walls naturally arise whenever a symmetry is spontaneously broken. They interconnect regions with different realizations of the broken symmetry, promoting structure formation from cosmological length scales to the atomic level1,2. In ferroelectric and ferromagnetic materials, domain walls with unique functionalities emerge, holding great promise for nanoelectronics and spintronics applications3-5. These walls are usually of Ising, Bloch or Néel type and separate homogeneously ordered domains. Here we demonstrate that a wide variety of new domain walls occurs in the presence of spatially modulated domain states. Using magnetic force microscopy and micromagnetic simulations, we show three fundamental classes of domain walls to arise in the near-room-temperature helimagnet iron germanium. In contrast to conventional ferroics, the domain walls exhibit a well-defined inner structure, which—analogous to cholesteric liquid crystals—consists of topological disclination and dislocation defects. Similar to the magnetic skyrmions that form in the same material6,7, the domain walls can carry a finite topological charge, permitting an efficient coupling to spin currents and contributions to a topological Hall effect. Our study establishes a new family of magnetic nano-objects with non-trivial topology, opening the door to innovative device concepts based on helimagnetic domain walls.
Electrical Transport and Magnetoresistance in Single-Wall Carbon Nanotubes Films
Directory of Open Access Journals (Sweden)
Vitaly KSENEVICH
2014-06-01
Full Text Available Electrical transport properties and magnetoresistance of single-wall carbon nanotubes (SWCNT films were investigated within temperature range (2 – 300 K and in magnetic fields up to 8 T. A crossover between metallic (dR/dT > 0 and non-metallic (dR/dT < 0 temperature dependence of the resistance as well as low-temperature saturation of the resistance in high bias regime indicated on the diminishing of role of the contact barriers between individual nanotubes essential for the charge transport in SWCNT arrays. The magnetoresistance (MR data demonstrated influence of weak localization and electron-electron interactions on charge transport properties in SWCNT films. The low-field negative MR with positive upturn was observed at low temperatures. At T > 10 K only negative MR was observed in the whole range of available magnetic fields. The negative MR can be approximated using 1D weak localization (WL model. The low temperature positive MR is induced by contribution from electron-electron interactions. DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6311
Domain wall engineering through exchange bias
International Nuclear Information System (INIS)
Albisetti, E.; Petti, D.
2016-01-01
The control of the structure and position of magnetic domain walls is at the basis of the development of different magnetic devices and architectures. Several nanofabrication techniques have been proposed to geometrically confine and shape domain wall structures; however, a fine tuning of the position and micromagnetic configuration is hardly achieved, especially in continuous films. This work shows that, by controlling the unidirectional anisotropy of a continuous ferromagnetic film through exchange bias, domain walls whose spin arrangement is generally not favored by dipolar and exchange interactions can be created. Micromagnetic simulations reveal that the domain wall width, position and profile can be tuned by establishing an abrupt change in the direction and magnitude of the exchange bias field set in the system. - Highlights: • Micromagnetic simulations study domain walls in exchange biased thin films. • Novel domain wall configurations can be stabilized via exchange bias. • Domain walls nucleate at the boundary of regions with different exchange bias. • Domain wall width and spin profile are controlled by tuning the exchange bias.
Domain wall networks on solitons
International Nuclear Information System (INIS)
Sutcliffe, Paul
2003-01-01
Domain wall networks on the surface of a soliton are studied in a simple theory. It consists of two complex scalar fields, in 3+1 dimensions, with a global U(1)xZ n symmetry, where n>2. Solutions are computed numerically in which one of the fields forms a Q ball and the other field forms a network of domain walls localized on the surface of the Q ball. Examples are presented in which the domain walls lie along the edges of a spherical polyhedron, forming junctions at its vertices. It is explained why only a small restricted class of polyhedra can arise as domain wall networks
International Nuclear Information System (INIS)
Rodriguez-Rodriguez, G; Hierro-Rodriguez, A; Perez-Junquera, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D
2010-01-01
The interplay between collective pinning on intrinsic structural defects and artificial pinning at a patterned hole is studied in magnetic multilayers with perpendicular anisotropy. The pinning strength of a patterned hole is measured through its efficiency to stop domain wall (DW) propagation into a consecutive unpatterned nanowire section (using antisymmetric magnetoresistance to detect the direction of DW propagation) whereas collective pinning is characterized by the field dependence of DW velocity. Close to room temperature, collective pinning becomes weaker than artificial pinning so that pinning at the hole compensates nucleation-pad geometry, blocking DW propagation across the nanowire.
Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments
Mohammed, Hanan
2017-06-22
Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.
Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments
Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen
2017-01-01
Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.
Domain Walls and Matter-Antimatter Domains in the Early Universe
Directory of Open Access Journals (Sweden)
Dolgov A.D.
2017-01-01
Full Text Available We suggest a scenario of spontaneous (or dynamical C and CP violation according to which it is possible to generate domains of matter and antimatter separated by cosmologically large distances. Such C(CP violation existed only in the early universe and later it disappeared with the only trace of generated matter and antimatter domains. So this scenario does not suffer from the problem of domain walls. According to this scenario the width of the domain wall should grow exponentially to prevent annihilation at the domain boundaries. Though there is a classical result obtained by Basu and Vilenkin that the width of the wall tends to the one of the stationary solution (constant physical width. That is why we considered thick domain walls in a de Sitter universe following paper by Basu and Vilenkin. However, we were interested not only in stationary solutions found therein, but also investigated the general case of domain wall evolution with time. When the wall thickness parameter, δ0 , is smaller than H−1/2 where H is the Hubble parameter in de Sitter space-time, then the stationary solutions exist, and initial field configurations tend with time to the stationary ones. However, there are no stationary solutions for δ0>H−1/2 We have calculated numerically the rate of the wall expansion in this case and have found that the width of the wall grows exponentially fast for δ0≫H−1 An explanation for the critical value δ0c=H−1/2 is also proposed.
Dressed Domain Walls and holography
International Nuclear Information System (INIS)
Grisa, Luca; Pujolas, Oriol
2008-01-01
The cutoff version of the AdS/CFT correspondence states that the Randall Sundrum scenario is dual to a Conformal Field Theory (CFT) coupled to gravity in four dimensions. The gravitational field produced by relativistic Domain Walls can be exactly solved in both sides of the correspondence, and thus provides one further check of it. We show in the two sides that for the most symmetric case, the wall motion does not lead to particle production of the CFT fields. Still, there are nontrivial effects. Due to the trace anomaly, the CFT effectively renormalizes the Domain Wall tension. On the five dimensional side, the wall is a codimension 2 brane localized on the Randall-Sundrum brane, which pulls the wall in a uniform acceleration. This is perceived from the brane as a Domain Wall with a tension slightly larger than its bare value. In both cases, the deviation from General Relativity appears at nonlinear level in the source, and the leading corrections match to the numerical factors.
Control of vortex state in cobalt nanorings with domain wall pinning centers
Directory of Open Access Journals (Sweden)
Manohar Lal
2018-05-01
Full Text Available Magnetic rings at the mesoscopic scale exhibit new spin configuration states and switching behavior, which can be controlled via geometrical structure, material composition and applied field. Vortex states in magnetic nanorings ensure flux closure, which is necessary for low stray fields in high packing density in memory devices. We performed magnetoresistance measurements on cobalt nanoring devices and show that by attaching nanowires to the ring, the vortex state can be stabilized. When a square pad is attached to the free end of the wire, the domain wall nucleation field in the nanowire is reduced. In addition, the vortex state persists over a larger range of magnetic fields, and exists at all in-plane orientations of the magnetic field. These experimental findings are well supported by our micromagnetic simulations.
Structural domain walls in polar hexagonal manganites
Kumagai, Yu
2014-03-01
The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.
Gravitational waves from domain walls and their implications
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Kazunori Nakayama
2017-07-01
Full Text Available We evaluate the impact of domain-wall annihilation on the currently ongoing and planned gravitational wave experiments, including a case in which domain walls experience a frictional force due to interactions with the ambient plasma. We show the sensitivity reach in terms of physical parameters, namely, the wall tension and the annihilation temperature. We find that a Higgs portal scalar, which stabilizes the Higgs potential at high energy scales, can form domain walls whose annihilation produces a large amount of gravitational waves within the reach of the advanced LIGO experiment (O5. Domain wall annihilation can also generate baryon asymmetry if the scalar is coupled to either SU(2L gauge fields or the (B−L current. This is a variant of spontaneous baryogenesis, but it naturally avoids the isocurvature constraint due to the scaling behavior of the domain-wall evolution. We delineate the parameter space where the domain-wall baryogenesis works successfully and discuss its implications for the gravitational wave experiments.
Probing giant magnetoresistance with THz spectroscopy
DEFF Research Database (Denmark)
Jin, Zuanming; Tkach, Alexander; Casper, Frederick
2014-01-01
We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....
Gravity and domain wall problem
International Nuclear Information System (INIS)
Rai, B.; Senjanovic, G.
1992-11-01
It is well known that the spontaneous breaking of discrete symmetries may lead to conflict with big-bang cosmology. This is due to formation of domain walls which give unacceptable contribution to the energy density of the universe. On the other hand, it is expected that gravity breaks global symmetries explicitly. In this work we propose that this could provide a natural solution to the domain-wall problem. (author). 17 refs
Second-harmonic imaging of ferroelectric domain walls
DEFF Research Database (Denmark)
Bozhevolnyi, Sergey I.; Hvam, Jørn Märcher; Pedersen, Kjeld
1998-01-01
configurations are presented. The SH generation enhancement is found especially pronounced for the polarization of the SH radiation being perpendicular to the domain walls. The origin and selection rules for the contrast in SH images of domain walls are discussed. The results obtained suggest that the domain...
Dynamics of domain wall driven by spin-transfer torque
International Nuclear Information System (INIS)
Chureemart, P.; Evans, R. F. L.; Chantrell, R. W.
2011-01-01
Spin-torque switching of magnetic devices offers new technological possibilities for data storage and integrated circuits. We have investigated domain-wall motion in a ferromagnetic thin film driven by a spin-polarized current using an atomistic spin model with a modified Landau-Lifshitz-Gilbert equation including the effect of the spin-transfer torque. The presence of the spin-transfer torque is shown to create an out-of-plane domain wall, in contrast to the external-field-driven case where an in-plane wall is found. We have investigated the effect of the spin torque on domain-wall displacement, domain-wall velocity, and domain-wall width, as well as the equilibration time in the presence of the spin-transfer torque. We have shown that the minimum spin-current density, regarded as the critical value for domain-wall motion, decreases with increasing temperature.
Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan
2018-01-01
Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.
Domain walls in single-chain magnets
Pianet, Vivien; Urdampilleta, Matias; Colin, Thierry; Clérac, Rodolphe; Coulon, Claude
2017-12-01
The topology and creation energy of domain walls in different magnetic chains (called Single-Chain Magnets or SCMs) are discussed. As these domain walls, that can be seen as "defects", are known to control both static and dynamic properties of these one-dimensional systems, their study and understanding are necessary first steps before a deeper discussion of the SCM properties at finite temperature. The starting point of the paper is the simple regular ferromagnetic chain for which the characteristics of the domain walls are well known. Then two cases will be discussed (i) the "mixed chains" in which isotropic and anisotropic classical spins alternate, and (ii) the so-called "canted chains" where two different easy axis directions are present. In particular, we show that "strictly narrow" domain walls no longer exist in these more complex cases, while a cascade of phase transitions is found for canted chains as the canting angle approaches 45∘. The consequence for thermodynamic properties is briefly discussed in the last part of the paper.
Alternative to domain wall fermions
International Nuclear Information System (INIS)
Neuberger, H.
2002-01-01
An alternative to commonly used domain wall fermions is presented. Some rigorous bounds on the condition number of the associated linear problem are derived. On the basis of these bounds and some experimentation it is argued that domain wall fermions will in general be associated with a condition number that is of the same order of magnitude as the product of the condition number of the linear problem in the physical dimensions by the inverse bare quark mass. Thus, the computational cost of implementing true domain wall fermions using a single conjugate gradient algorithm is of the same order of magnitude as that of implementing the overlap Dirac operator directly using two nested conjugate gradient algorithms. At a cost of about a factor of two in operation count it is possible to make the memory usage of direct implementations of the overlap Dirac operator independent of the accuracy of the approximation to the sign function and of the same order as that of standard Wilson fermions
Domain walls and fermion scattering in grand unified models
International Nuclear Information System (INIS)
Steer, D.A.; Vachaspati, T.
2006-01-01
Motivated by grand unification, we study the properties of domain walls formed in a model with SU(5)xZ 2 symmetry which is spontaneously broken to SU(3)xSU(2)xU(1)/Z 6 , and subsequently to SU(3)xU(1)/Z 3 . Even after the first stage of symmetry breaking, the SU(3) symmetry is broken to SU(2)xU(1)/Z 2 on the domain wall. In a certain range of parameters, flux tubes carrying color- and hyper-charge live on the domain wall and appear as 'boojums' when viewed from one side of the domain wall. Magnetic monopoles are also formed in the symmetry breaking and those carrying color and hyper-charge can be repelled from the wall due to the Meissner effect, or else their magnetic flux can penetrate the domain wall in quantized units. After the second stage of symmetry breaking, fermions can transmute when they scatter with the domain wall, providing a simpler version of fermion-monopole scattering: for example, neutrinos can scatter into d-quarks, leaving behind electric charge and color which is carried by gauge field excitations living on the domain wall
Booted domain wall and charged Kaigorodov space
International Nuclear Information System (INIS)
Cai Ronggen
2003-01-01
The Kaigorodov space is a homogeneous Einstein space and it describes a pp-wave propagating in anti-de Sitter space. It is conjectured in the literature that M-theory or string theory on the Kaigorodov space times a compact manifold is dual to a conformal field theory in an infinitely-boosted frame with constant momentum density. In this Letter we present a charged generalization of the Kaigorodov space by boosting a non-extremal charged domain wall to the ultrarelativity limit where the boost velocity approaches the speed of light. The finite boost of the domain wall solution gives the charged generalization of the Carter-Novotny-Horsky metric. We study the thermodynamics associated with the charged Carter-Novotny-Horsky space and discuss its relation to that of the static black domain walls and its implications in the domain wall/QFT (quantum field theory) correspondence
Giant magnetoresistance in CrFeMn alloys
International Nuclear Information System (INIS)
Xu, W.M.; Zheng, P.; Chen, Z.J.
1997-01-01
The electrical resistance and longitudinal magnetoresistance of Cr 75 (Fe x Mn 1-x ) 25 alloys, x=0.64, 0.72, are studied in the temperature range 1.5-270 K in applied field up to 7.5 T. The magnetoresistance is negative and strongly correlated with the spin reorientation. In the temperature range where the antiferromagnetic and ferromagnetic domains coexist, the samples display giant magnetoresistance which follows a H n -law at high field. (orig.)
Domain walls at finite temperature
International Nuclear Information System (INIS)
Carvalho, C.A. de; Marques, G.C.; Silva, A.J. da; Ventura, I.
1983-08-01
It is suggested that the phase transition of lambda phi 4 theory as a function of temperature coincides with the spontaneous appearance of domain walls. Based on one-loop calculations, T sub(c) = 4M/√ lambda is estimated as the temperature for these domains to because energetically favored, to be compared with T sub(c) = 4.9M/√ lambda from effective potential calculations (which are performed directly in the broken phase). Domain walls, as well as other Types of fluctuations, disorder the system above T sub(c), leading to =0. The critical exponent for the specific heat above T sub(c) is computed; and α=2/3 + 0 (√ lambda) is obtained. (Author) [pt
Flavor changing strings and domain walls
International Nuclear Information System (INIS)
Dvali, G.; Senjanovic, G.
1993-04-01
We consider the cosmological consequences of a spontaneous breaking of non-abelian discrete symmetries, which may appear as a natural remnant of a continuous symmetry, such as a family symmetry. The result may be a stable domain wall across which an electron would turn into a muon (orν e into ν μ ) or a flavor analogue of an Alice string-domain wall structure with the same property. (author). 16 refs
Monopoles, vortices, domain walls and D-branes: The rules of interaction
International Nuclear Information System (INIS)
Sakai, Norisuke; Tong, David
2005-01-01
Non-abelian gauge theories in the Higgs phase admit a startling variety of BPS solitons. These include domain walls, vortex strings, confined monopoles threaded on vortex strings, vortex strings ending on domain walls, monopoles threaded on strings ending on domain walls, and more. After presenting a self-contained review of these objects, including several new results on the dynamics of domain walls, we go on to examine the possible interactions of solitons of various types. We point out the existence of a classical binding energy when the string ends on the domain wall which can be thought of as a BPS boojum with negative mass. We present an index theorem for domain walls in non-abelian gauge theories. We also answer questions such as: Which strings can end on which walls? What happens when monopoles pass through domain walls? What happens when domain walls pass through each other? (author)
Axion-dilaton domain walls and fake supergravity
International Nuclear Information System (INIS)
Sonner, Julian; Townsend, Paul K
2007-01-01
Dynamical systems methods are used to investigate domain-wall solutions of a two-parameter family of models in which gravity is coupled to an axion and to a dilaton with an exponential potential of either sign. A complete global analysis is presented for (i) constant axion and (ii) flat walls, including a study of bifurcations and a new exact domain-wall solution with non-constant axion. We reconsider 'fake-supergravity' issues in light of these results. We show, by example, how domain walls determine multi-valued superpotentials that branch at stationary points that are not stationary points of the potential, and we apply this result to potentials with anti-de Sitter vacua. We also show by example that 'adapted' truncation to a single-scalar model may be inconsistent, and we propose a 'generalized' fake-supergravity formalism that applies in some such cases
Magnetic domain wall conduits for single cell applications
DEFF Research Database (Denmark)
Donolato, Marco; Torti, A.; Kostesha, Natalie
2011-01-01
The ability to trap, manipulate and release single cells on a surface is important both for fundamental studies of cellular processes and for the development of novel lab-on-chip miniaturized tools for biological and medical applications. In this paper we demonstrate how magnetic domain walls...... walls over 16 hours. Moreover, we demonstrate the controlled transport and release of individual yeast cells via displacement and annihilation of individual domain walls in micro- and nano-sized magnetic structures. These results pave the way to the implementation of magnetic devices based on domain...... walls technology in lab-on-chip systems devoted to accurate individual cell trapping and manipulation....
Investigation of Ferroelectric Domain Walls by Raman Spectroscopy
Stone, Gregory A.
Ferroelectric materials are characterized by an intrinsic spontaneous electric dipole moment that can be manipulated by the application of an electric field. Regions inside the crystal, known as domains, can have the spontaneous dipole moments oriented in a different direction than the surrounding crystal. Due to favorable piezoelectric, pyroelectric, electro-optic, and nonlinear optical properties, ferroelectric materials are attractive for commercial applications. Many devices, such as nonlinear frequency converters, require precisely engineered domain patterns. The properties of domains and their boundaries, known as domain walls, are vital to the performance and limitations of these devices. As a result, ferroelectric domains and the domain walls have been the focus of many scientific studies. Despite all this work, questions remain regarding their properties. This work is aimed at developing a better understanding of the properties of the domain wall using confocal Raman spectroscopy. Raman spectra taken from domain walls in Lithium Niobate and Lithium Tantalate reveal two distinct changes in the Raman spectra: (1) Shifts in frequency of the bulk Raman modes, which persists over a range of 0.2-0.5 mu m from the domain wall. The absence of this effect in defect free stoichiometric Lithium Tantalate indicates that the shifts are related to defects inside the crystal. (2) The presence of Raman modes corresponding to phonons propagating orthogonal to the laser beam axis, which are not collected in the bulk crystal. The phonons also preferential propagate normal to the domain wall. These modes are detected up to 0.35 mum from the domain wall. The observation and separation of these effects was made possible by the optimized spatial resolution (0.23 mum) of a home-built scanning confocal microscope and the fact that degeneracy of the transverse and longitudinal phonon polarization is lifted by polar phonons in Lithium Niobate and Lithium Tantalate. Raman
Domain walls in the extensions of the Standard Model
Krajewski, Tomasz; Lalak, Zygmunt; Lewicki, Marek; Olszewski, Paweł
2018-05-01
Our main interest is the evolution of domain walls of the Higgs field in the early Universe. The aim of this paper is to understand how dynamics of Higgs domain walls could be influenced by yet unknown interactions from beyond the Standard Model. We assume that the Standard Model is valid up to certain, high, energy scale Λ and use the framework of the effective field theory to describe physics below that scale. Performing numerical simulations with different values of the scale Λ we are able to extend our previous analysis [1]. Our recent numerical simulations show that evolution of Higgs domain walls is rather insensitive to interactions beyond the Standard Model as long as masses of new particles are grater than 1012 GeV. For lower values of Λ the RG improved effective potential is strongly modified at field strengths crucial to the evolution of domain walls. However, we find that even for low values of Λ, Higgs domain walls decayed shortly after their formation for generic initial conditions. On the other hand, in simulations with specifically chosen initial conditions Higgs domain walls can live longer and enter the scaling regime. We also determine the energy spectrum of gravitational waves produced by decaying domain walls of the Higgs field. For generic initial field configurations the amplitude of the signal is too small to be observed in planned detectors.
Resonant tunneling across a ferroelectric domain wall
Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.
2018-04-01
Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.
Anomalous feedback and negative domain wall resistance
International Nuclear Information System (INIS)
Cheng, Ran; Xiao, Di; Zhu, Jian-Gang
2016-01-01
Magnetic induction can be regarded as a negative feedback effect, where the motive-force opposes the change of magnetic flux that generates the motive-force. In artificial electromagnetics emerging from spintronics, however, this is not necessarily the case. By studying the current-induced domain wall dynamics in a cylindrical nanowire, we show that the spin motive-force exerting on electrons can either oppose or support the applied current that drives the domain wall. The switching into the anomalous feedback regime occurs when the strength of the dissipative torque β is about twice the value of the Gilbert damping constant α . The anomalous feedback manifests as a negative domain wall resistance, which has an analogy with the water turbine. (paper)
The profile of the domain walls in amorphous glass-covered microwires
Energy Technology Data Exchange (ETDEWEB)
Beck, F.; Rigue, J.N. [Universidade Federal de Santa Maria, Campus Cachoeira do Sul, RS (Brazil); Carara, M., E-mail: carara@smail.ufsm.br [Departamento de Física, Universidade Federal de Santa Maria, Santa Maria, RS (Brazil)
2017-08-01
Highlights: • Glass-covered microwires with positive magnetostriction were studied. • The single domain wall dynamics was studied under different conditions. • We have evaluated the profile and shape of the moving domain walls. • The domain wall evolves from a bell shape to a parabolic one when a current is applied. - Abstract: We have studied the domain wall dynamics in Joule-annealed amorphous glass-covered microwires with positive magnetostriction in the presence of an electric current, in order to evaluate the profile and shape of the moving domain wall. Such microwires are known to present magnetic bi-stability when axially magnetized. The single domain wall dynamics was evaluated under different conditions, under an axially applied stress and an electric current. We have observed the well known increasing of the domain wall damping with the applied stress due to the increase in the magnetoelastic anisotropy and, when the current is applied, depending on the current intensity and direction, a modification on the axial domain wall damping. When the orthogonal motion of the domain wall is considered, we have observed that the associated velocity present a smaller dependence on the applied current intensity. It was observed a modification on both the domain wall shape and length. In a general way, the domain wall evolves from a bell shape to a parabolic shape as the current intensity is increased. The results were explained in terms of the change in the magnetic energy promoted by the additional Oersted field.
Altering critical depinning current via domain wall pile-up in magnetic nanowires
International Nuclear Information System (INIS)
Geng, Liwei D.; Jin, Yongmei M.
2015-01-01
An important role of domain wall pile-up in current-driven domain wall depinning in magnetic nanowires is revealed using micromagnetic simulations. It is found that the critical current for domain wall depinning can be substantially reduced and conveniently tuned by controlling domain wall number in the pile-up at pinning site, in analogy to dislocation pile-up responsible for Hall–Petch effect in mechanical strength. Domain wall pinning and depinning at an s-shape bend is considered, and the effects of curvature and current crowding in magnetic circuit on domain wall behaviors are discussed. - Highlights: • Advance fundamental knowledge of current-driven domain wall phenomena. • Provide a novel approach to drastically reduce the critical depinning current. • Solve an outstanding problem of effective control of domain wall pinning/depinning. • Report appealing new findings of magnetic domain wall pile-up mechanism. • Overcome the limitations of materials properties for domain wall-based devices
Localization of vector field on dynamical domain wall
Directory of Open Access Journals (Sweden)
Masafumi Higuchi
2017-03-01
Full Text Available In the previous works (arXiv:1202.5375 and arXiv:1402.1346, the dynamical domain wall, where the four dimensional FRW universe is embedded in the five dimensional space–time, has been realized by using two scalar fields. In this paper, we consider the localization of vector field in three formulations. The first formulation was investigated in the previous paper (arXiv:1510.01099 for the U(1 gauge field. In the second formulation, we investigate the Dvali–Shifman mechanism (arXiv:hep-th/9612128, where the non-abelian gauge field is confined in the bulk but the gauge symmetry is spontaneously broken on the domain wall. In the third formulation, we investigate the Kaluza–Klein modes coming from the five dimensional graviton. In the Randall–Sundrum model, the graviton was localized on the brane. We show that the (5,μ components (μ=0,1,2,3 of the graviton are also localized on the domain wall and can be regarded as the vector field on the domain wall. There are, however, some corrections coming from the bulk extra dimension if the domain wall universe is expanding.
On thick domain walls in general relativity
Goetz, Guenter; Noetzold, Dirk
1989-01-01
Planar scalar field configurations in general relativity differ considerably from those in flat space. It is shown that static domain walls of finite thickness in curved space-time do not possess a reflection symmetry. At infinity, the space-time tends to the Taub vacuum on one side of the wall and to the Minkowski vacuum (Rindler space-time) on the other. Massive test particles are always accelerated towards the Minkowski side, i.e., domain walls are attractive on the Taub side, but repulsive on the Minkowski side (Taub-vacuum cleaner). It is also proved that the pressure in all directions is always negative. Finally, a brief comment is made concerning the possibility of infinite, i.e., bigger than horizon size, domain walls in our universe. All of the results are independent of the form of the potential V(phi) greater than or equal to 0 of the scalar field phi.
Contribution of domain wall networks to the CMB power spectrum
International Nuclear Information System (INIS)
Lazanu, A.; Martins, C.J.A.P.; Shellard, E.P.S.
2015-01-01
We use three domain wall simulations from the radiation era to the late-time dark energy domination era based on the PRS algorithm to calculate the energy–momentum tensor components of domain wall networks in an expanding universe. Unequal time correlators in the radiation, matter and cosmological constant epochs are calculated using the scaling regime of each of the simulations. The CMB power spectrum of a network of domain walls is determined. The first ever quantitative constraint for the domain wall surface tension is obtained using a Markov chain Monte Carlo method; an energy scale of domain walls of 0.93 MeV, which is close but below the Zel'dovich bound, is determined
Contribution of domain wall networks to the CMB power spectrum
Energy Technology Data Exchange (ETDEWEB)
Lazanu, A., E-mail: A.Lazanu@damtp.cam.ac.uk [Centre for Theoretical Cosmology, Department of Applied Mathematics and Theoretical Physics, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Martins, C.J.A.P., E-mail: Carlos.Martins@astro.up.pt [Centro de Astrofísica, Universidade do Porto, Rua das Estrelas, 4150-762 Porto (Portugal); Instituto de Astrofísica e Ciências do Espaço, CAUP, Rua das Estrelas, 4150-762 Porto (Portugal); Shellard, E.P.S., E-mail: E.P.S.Shellard@damtp.cam.ac.uk [Centre for Theoretical Cosmology, Department of Applied Mathematics and Theoretical Physics, Wilberforce Road, Cambridge CB3 0WA (United Kingdom)
2015-07-30
We use three domain wall simulations from the radiation era to the late-time dark energy domination era based on the PRS algorithm to calculate the energy–momentum tensor components of domain wall networks in an expanding universe. Unequal time correlators in the radiation, matter and cosmological constant epochs are calculated using the scaling regime of each of the simulations. The CMB power spectrum of a network of domain walls is determined. The first ever quantitative constraint for the domain wall surface tension is obtained using a Markov chain Monte Carlo method; an energy scale of domain walls of 0.93 MeV, which is close but below the Zel'dovich bound, is determined.
Contribution of domain wall networks to the CMB power spectrum
Directory of Open Access Journals (Sweden)
A. Lazanu
2015-07-01
Full Text Available We use three domain wall simulations from the radiation era to the late-time dark energy domination era based on the PRS algorithm to calculate the energy–momentum tensor components of domain wall networks in an expanding universe. Unequal time correlators in the radiation, matter and cosmological constant epochs are calculated using the scaling regime of each of the simulations. The CMB power spectrum of a network of domain walls is determined. The first ever quantitative constraint for the domain wall surface tension is obtained using a Markov chain Monte Carlo method; an energy scale of domain walls of 0.93 MeV, which is close but below the Zel'dovich bound, is determined.
Current-driven vortex domain wall motion in wire-tube nanostructures
Energy Technology Data Exchange (ETDEWEB)
Espejo, A. P. [Departamento de Física, Universidad de Santiago de Chile (USACH), Av. Ecuador 3493, 9170124 Santiago (Chile); Institute of Nanostructure and Solid State Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg (Germany); Vidal-Silva, N. [Departamento de Física, Universidad de Santiago de Chile (USACH), Av. Ecuador 3493, 9170124 Santiago (Chile); López-López, J. A. [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Goerlitz, D.; Nielsch, K. [Institute of Nanostructure and Solid State Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg (Germany); Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH), Av. Ecuador 3493, 9170124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Av. Ecuador 3493, 9170124 Santiago (Chile)
2015-03-30
We have investigated the current-driven domain wall motion in nanostructures comprised of a pair of nanotube and nanowire segments. Under certain values of external magnetic fields, it is possible to pin a vortex domain wall in the transition zone between the wire and tube segments. We explored the behavior of this domain wall under the action of an electron flow applied in the opposite direction to the magnetic field. Thus, for a fixed magnetic field, it is possible to release a domain wall pinned simply by increasing the intensity of the current density, or conversely, for a fixed current density, it is possible to release the domain wall simply decreasing the magnetic external field. When the domain wall remains pinned due to the competition between the current density and the magnetic external field, it exhibits a oscillation frequency close to 8 GHz. The amplitude of the oscillations increases with the current density and decreases over time. On the other hand, when the domain wall is released and propagated through the tube segment, this shows the standard separation between a steady and a precessional regime. The ability to pin and release a domain wall by varying the geometric parameters, the current density, or the magnetic field transforms these wire-tube nanostructures in an interesting alternative as an on/off switch nano-transistor.
Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure
Murapaka, C.; Sethi, P.; Goolaup, S.; Lew, W. S.
2016-01-01
An all-magnetic logic scheme has the advantages of being non-volatile and energy efficient over the conventional transistor based logic devices. In this work, we present a reconfigurable magnetic logic device which is capable of performing all basic logic operations in a single device. The device exploits the deterministic trajectory of domain wall (DW) in ferromagnetic asymmetric branch structure for obtaining different output combinations. The programmability of the device is achieved by using a current-controlled magnetic gate, which generates a local Oersted field. The field generated at the magnetic gate influences the trajectory of the DW within the structure by exploiting its inherent transverse charge distribution. DW transformation from vortex to transverse configuration close to the output branch plays a pivotal role in governing the DW chirality and hence the output. By simply switching the current direction through the magnetic gate, two universal logic gate functionalities can be obtained in this device. Using magnetic force microscopy imaging and magnetoresistance measurements, all basic logic functionalities are demonstrated. PMID:26839036
Conduction at domain walls in oxide multiferroics
Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.
2009-03-01
Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.
Gravitational field of spherical domain wall in higher dimension
Indian Academy of Sciences (India)
An exact solution of Einstein's equations is found describing the gravitational ﬁeld of a spherical domain wall with nonvanishing stress component in the direction perpendicular to the plane of the wall. Also we have studied the motion of test particle around the domain wall.
Dynamics of one-dimensional domain walls interacting with disorder potential
International Nuclear Information System (INIS)
Krusin-Elbaum, L.; Shibauchi, T.; Argyle, B.; Gignac, L.; Zabel, T.; Weller, D.
2001-01-01
Dynamics of 1D perpendicular-anisotropy domain walls in a few monolayer-thin Co films is imaged by polar Kerr microscopy. When domain walls, driven by a square-pulsed magnetic fields, travel through a random disordered potential landscape, they display Gaussian-distributed roughness characteristic of this landscape. Average velocity of the domain wall driven by a constant magnetic field strongly depends on a strain field which modifies (increases) the elastic energy of the wall and reduces the wall velocity
Fluctuation and dipolar interaction effects on the pinning of domain walls
International Nuclear Information System (INIS)
Chui, S.T.
2001-01-01
We discuss the effect of the dipolar interaction on the pinning of domain walls. Domain walls are usually pinned near the boundaries between grains. Magnetic charges accumulated at the domain wall make the wall more unstable and easier to depin. We discuss how the grain-orientation and thermal fluctuations affect these magnetic charges and hence the depinning of the domain walls. Our results are illustrated by finite temperature Monte Carlo simulation on periodic arrays of large cells separated by walls consisting of faces of pyramids
Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.
Stamopoulos, D; Aristomenopoulou, E
2015-08-26
Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.
Theory of topological edges and domain walls
Bais, F.A.; Slingerland, J.K.; Haaker, S.M.
2009-01-01
We investigate domain walls between topologically ordered phases in two spatial dimensions. We present a method which allows for the determination of the superselection sectors of excitations of such walls and which leads to a unified description of the kinematics of a wall and the two phases to
Far- and near-field second-harmonic imaging of ferroelectric domain walls
DEFF Research Database (Denmark)
Bozhevolnyi, Sergey I.; Pedersen, K.; Skettrup, Torben
1998-01-01
Domain walls in periodically poled ferroelectric LiNbO3 crystals are observed with both far- and near-field imaging techniques that make use of second harmonic generation in the transition regions between neighbouring domains. Second harmonic images of domain walls represent bright lines of about.......5 micrometers in width (as measured with the near-field microscope) for the polarization of the second harmonic radiation perpendicular to the domain walls. Origin and selection rules for the constrast in second harmonic images of domain walls are discussed....
Magnetic domain walls as reconfigurable spin-wave nano-channels
Wagner, Kai
Research efforts to utilize spin waves as information carriers for wave based logic in micro- and nano-structured ferromagnetic materials have increased tremendously over the recent years. However, finding efficient means of tailoring and downscaling guided spin-wave propagation in two dimensions, while maintaining energy efficiency and reconfigurability, still remains a delicate challenge. Here we target these challenges by spin-wave transport inside nanometer-scaled potential wells formed along magnetic domain walls. For this, we investigate the magnetization dynamics of a rectangular-like element in a Landau state exhibiting a so called 180° Néel wall along its center. By microwave antennae the rf-excitation is constricted to one end of the domain wall and the spin-wave intensities are recorded by means of Brillouin-Light Scattering microscopy revealing channeled transport. Additional micromagnetic simulations with pulsed as well as cw-excitation are performed to yield further insight into this class of modes. We find several spin-wave modes quantized along the width of the domain wall yet with well defined wave vectors along the wall, exhibiting positive dispersion. In a final step, we demonstrate the flexibility of these spin-wave nano-channels based on domain walls. In contrast to wave guides realised by fixed geometries, domain walls can be easily manipulated. Here we utilize small external fields to control its position with nanometer precision over a micrometer range, while still enabling transport. Domain walls thus, open the perspective for reprogrammable and yet non-volatile spin-wave waveguides of nanometer width. Financial support by the Deutsche Forschungsgemeinschaft within project SCHU2922/1-1 is gratefully acknowledged.
Atomistic switch of giant magnetoresistance and spin thermopower in graphene-like nanoribbons
Zhai, Ming-Xing; Wang, Xue-Feng
2016-01-01
We demonstrate that the giant magnetoresistance can be switched off (on) in even- (odd-) width zigzag graphene-like nanoribbons by an atomistic gate potential or edge disorder inside the domain wall in the antiparallel (ap) magnetic configuration. A strong magneto-thermopower effect is also predicted that the spin thermopower can be greatly enhanced in the ap configuration while the charge thermopower remains low. The results extracted from the tight-binding model agree well with those obtained by first-principles simulations for edge doped graphene nanoribbons. Analytical expressions in the simplest case are obtained to facilitate qualitative analyses in general contexts. PMID:27857156
Ballistic rectification of vortex domain wall chirality at nanowire corners
Energy Technology Data Exchange (ETDEWEB)
Omari, K.; Bradley, R. C.; Broomhall, T. J.; Hodges, M. P. P.; Hayward, T. J. [Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Rosamond, M. C.; Linfield, E. H. [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom); Im, M.-Y. [Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873 (Korea, Republic of); Fischer, P. [Materials Sciences Division, Lawrence Berkley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Santa Cruz, California 94056 (United States)
2015-11-30
The interactions of vortex domain walls with corners in planar magnetic nanowires are probed using magnetic soft X-ray transmission microscopy. We show that when the domain walls are propagated into sharp corners using applied magnetic fields above a critical value, their chiralities are rectified to either clockwise or anticlockwise circulation depending on whether the corners turn left or right. Single-shot focused magneto-optic Kerr effect measurements are then used to demonstrate how, when combined with modes of domain propagation that conserve vortex chirality, this allows us to dramatically reduce the stochasticity of domain pinning at artificial defect sites. Our results provide a tool for controlling domain wall chirality and pinning behavior both in further experimental studies and in future domain wall-based memory, logic and sensor technologies.
Magnetostatic coupling of 90 domain walls in FeNi/Cu/Co trilayers
Energy Technology Data Exchange (ETDEWEB)
Kurde, Julia; Miguel, Jorge; Kuch, Wolfgang [Freie Universitaet, Berlin (Germany); Bayer, Daniela; Aeschlimann, Martin [Technische Universitaet, Kaiserslautern (Germany); Sanchez-Barriga, Jaime; Kronast, Florian; Duerr, Herrmann A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany)
2011-07-01
The magnetic interlayer coupling of FeNi/Cu/Co trilayered microstructures has been studied by means of X-ray magnetic circular dichroism in combination with photoelectron emission microscopy (XMCD-PEEM). We find that a parallel coupling between magnetic domains coexists with a non-parallel coupling between magnetic domain walls of each ferromagnetic layer. We attribute the non-parallel coupling of the two magnetic layers to local magnetic stray fields arising at domain walls in the magnetically harder Co layer. In the magnetically softer FeNi layer non-ordinary domain walls such as 270 and 90 domain walls with overshoot of the magnetization either inwards or outwards relative to the turning direction of the Co magnetization are identified. Micromagnetic simulations reveal that in the absence of magnetocrystalline anisotropy, both types of overshooting domain walls are energetically equivalent. However, if a uniaxial in-plane anisotropy is present, the relative orientation of the domain walls with respect to the anisotropy axis determines which of these domain walls is energetically favorable.
Walker-type velocity oscillations of magnetic domain walls
International Nuclear Information System (INIS)
Vella-Coleiro, G.P.
1976-01-01
We report stroboscopic observations of the radial motion of a magnetic bubble domain wall in an epitaxial LuGdAl iron garnet film. At high drive fields, initial velocities up to 9500 cm/sec were measured, and the domain wall was observed to move backwards during the field pulse, in agreement with calculations based on the Walker model
Spin Hall driven domain wall motion in magnetic bilayers coupled by a magnetic oxide interlayer
Liu, Yang; Furuta, Masaki; Zhu, Jian-Gang Jimmy
2018-05-01
mCell, previously proposed by our group, is a four-terminal magnetoresistive device with isolated write- and read-paths for all-spin logic and memory applications. A mCell requires an electric-insulating magnetic layer to couple the spin Hall driven write-path to the magnetic free layer of the read-path. Both paths are magnetic layers with perpendicular anisotropy and their perpendicularly oriented magnetization needs to be maintained with this insertion layer. We have developed a magnetic oxide (FeOx) insertion layer to serve for these purposes. We show that the FeOx insertion layer provides sufficient magnetic coupling between adjacent perpendicular magnetic layers. Resistance measurement shows that this magnetic oxide layer can act as an electric-insulating layer. In addition, spin Hall driven domain wall motion in magnetic bi-layers coupled by the FeOx insertion layer is significantly enhanced compared to that in magnetic single layer; it also requires low voltage threshold that poses possibility for power-efficient device applications.
Energy Technology Data Exchange (ETDEWEB)
Zhmetko, D.N., E-mail: sergey.zhmetko@gmail.com [Department of Physics, Zaporizhzhya National University, 66 Zhukovsky Street, 69063 Zaporizhzhya (Ukraine); Zhmetko, S.D. [Department of Physics, Zaporizhzhya National University, 66 Zhukovsky Street, 69063 Zaporizhzhya (Ukraine); Troschenkov, Y.N. [Institute for Magnetism, 36-b Vernadsky Boulevard, 03142 Kyiv (Ukraine); Matsura, A.V. [Department of Physics, Zaporizhzhya National University, 66 Zhukovsky Street, 69063 Zaporizhzhya (Ukraine)
2013-08-15
The frequency dependence of asymmetry of the domain walls velocity relative to the middle plane of amorphous ribbon is investigated. An additional pressure of the same direction acting on each domain wall caused by dependence of eddy current damping on the coordinate of the domain wall is revealed. The microscopic mechanisms of this additional pressure are considered. - Highlights: ► Additional pressure on the domain wall, caused by inhomogeneity of its damping. ► Asymmetry of the coordinate of the nucleation of domain walls and their damping. ► Connection between the components of additional pressure and its direction. ► Interaction of domain walls with the surface defects of the amorphous ribbon.
International Nuclear Information System (INIS)
Zhmetko, D.N.; Zhmetko, S.D.; Troschenkov, Y.N.; Matsura, A.V.
2013-01-01
The frequency dependence of asymmetry of the domain walls velocity relative to the middle plane of amorphous ribbon is investigated. An additional pressure of the same direction acting on each domain wall caused by dependence of eddy current damping on the coordinate of the domain wall is revealed. The microscopic mechanisms of this additional pressure are considered. - Highlights: ► Additional pressure on the domain wall, caused by inhomogeneity of its damping. ► Asymmetry of the coordinate of the nucleation of domain walls and their damping. ► Connection between the components of additional pressure and its direction. ► Interaction of domain walls with the surface defects of the amorphous ribbon
Separated matter and antimatter domains with vanishing domain walls
Energy Technology Data Exchange (ETDEWEB)
Dolgov, A.D.; Godunov, S.I.; Rudenko, A.S.; Tkachev, I.I., E-mail: dolgov@fe.infn.it, E-mail: sgodunov@itep.ru, E-mail: a.s.rudenko@inp.nsk.su, E-mail: tkachev@ms2.inr.ac.ru [Physics Department and Laboratory of Cosmology and Elementary Particle Physics, Novosibirsk State University, Pirogova st. 2, Novosibirsk, 630090 (Russian Federation)
2015-10-01
We present a model of spontaneous (or dynamical) C and CP violation where it is possible to generate domains of matter and antimatter separated by cosmologically large distances. Such C(CP) violation existed only in the early universe and later it disappeared with the only trace of generated baryonic and/or antibaryonic domains. So the problem of domain walls in this model does not exist. These features are achieved through a postulated form of interaction between inflaton and a new scalar field, realizing short time C(CP) violation.
Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires
Abanov, Artem; Tretiakov, Oleg; Liu, Yang
2011-03-01
We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).
Transverse field-induced nucleation pad switching modes during domain wall injection
Energy Technology Data Exchange (ETDEWEB)
Bryan, M. T.; Fry, P. W.; Schrefl, T.; Gibbs, M. R. J.; Allwood, D. A.; Im, M.-Y.; Fischer, P.
2010-03-12
We have used magnetic transmission X-ray microscopy (M-TXM) to image in-field magnetization configurations of patterned Ni{sub 80}Fe{sub 20} domain wall 'injection pads' and attached planar nanowires. Comparison with micromagnetic simulations suggests that the evolution of magnetic domains in rectangular injection pads depends on the relative orientation of closure domains in the remanent state. The magnetization reversal pathway is also altered by the inclusion of transverse magnetic fields. These different modes explain previous results of domain wall injection into nanowires. Even more striking was the observation of domain walls injecting halfway across the width of wider (>400 nm wide) wires but over wire lengths of several micrometers. These extended Neel walls can interact with adjacent nanowires and cause a switching in the side of the wire undergoing reversal as the domain wall continues to expand.
Direct observation of stochastic domain-wall depinning in magnetic nanowires
Energy Technology Data Exchange (ETDEWEB)
Im, Mi-Young; Bocklage, Lars; Fischer, Peter; Meier, Guido
2008-11-01
The stochastic field-driven depinning of a domain wall pinned at a notch in a magnetic nanowire is directly observed using magnetic X-ray microscopy with high lateral resolution down to 15 nm. The depinning-field distribution in Ni{sub 80}Fe{sub 20} nanowires considerably depends on the wire width and the notch depth. The difference in the multiplicity of domain-wall types generated in the vicinity of a notch is responsible for the observed dependence of the stochastic nature of the domain wall depinning field on the wire width and the notch depth. Thus the random nature of the domain wall depinning process is controllable by an appropriate design of the nanowire.
Thick domain wall spacetimes with and without reflection symmetry
International Nuclear Information System (INIS)
Melfo, Alejandra; Pantoja, Nelson; Skirzewski, Aureliano
2003-01-01
We show that different thick domain wall spacetimes, for which the scalar field configuration and the potential are the same, can be found as solutions to the coupled Einstein-scalar field equations, depending on whether or not reflection symmetry on the wall is imposed. Spacetimes with reflection symmetry may be dynamic or static, while the asymmetric ones are static. Asymmetric walls are asymptotically flat on one side and reduce to the Taub spacetime on the other. Examples of asymmetric thick walls in D-dimensional spacetimes are given, and previous analysis on the distributional thin-wall limit of the dynamic symmetric thick walls are extended to the asymmetric case. A new family of reflection symmetric, static thick domain wall spacetimes, including previously known Bogomol'nyi-Prasad-Sommerfield walls, is presented
Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire
Tretiakov, O. A.; Liu, Y.; Abanov, Ar.
2010-11-01
We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.
Domain wall kinetics of lithium niobate single crystals near the hexagonal corner
Energy Technology Data Exchange (ETDEWEB)
Choi, Ju Won [Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Ko, Do-Kyeong [Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Advanced Photonics Research Institute, GIST, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Yu, Nan Ei, E-mail: neyu@gist.ac.kr, E-mail: jhro@pnu.edu [Advanced Photonics Research Institute, GIST, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Kitamura, Kenji [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Ro, Jung Hoon, E-mail: neyu@gist.ac.kr, E-mail: jhro@pnu.edu [Department of Biomedical Engineering, School of Medicine, Pusan National University, Busan 602-739 (Korea, Republic of)
2015-03-09
A mesospheric approach based on a simple microscopic 2D Ising model in a hexagonal lattice plane is proposed to explain macroscopic “asymmetric in-out domain wall motion” observation in the (0001) plane of MgO-doped stoichiometric lithium niobate. Under application of an electric field that was higher than the conventional coercive field (E{sub c}) to the ferroelectric crystal, a natural hexagonal domain was obtained with walls that were parallel to the Y-axis of the crystal. When a fraction of the coercive field of around 0.1E{sub c} is applied in the reverse direction, this hexagonal domain is shrunk (moved inward) from the corner site into a shape with a corner angle of around 150° and 15° wall slopes to the Y-axis. A flipped electric field of 0.15E{sub c} is then applied to recover the natural hexagonal shape, and the 150° corner shape changes into a flat wall with 30° slope (moved outward). The differences in corner domain shapes between inward and outward domain motion were analyzed theoretically in terms of corner and wall site energies, which are described using the domain corner angle and wall slope with respect to the crystal Y-axis, respectively. In the inward domain wall motion case, the energy levels of the evolving 150° domain corner and 15° slope walls are most competitive, and could co-exist. In the outward case, the energy levels of corners with angles >180° are highly stable when compared with the possible domain walls; only a flat wall with 30° slope to the Y-axis is possible during outward motion.
Constricted nanowire with stabilized magnetic domain wall
International Nuclear Information System (INIS)
Sbiaa, R.; Al Bahri, M.
2016-01-01
Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.
Magnetoresistance in terbium and holmium single crystals
International Nuclear Information System (INIS)
Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.
1976-01-01
The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested
Pseudo-supersymmetry and the domain-wall/cosmology correspondence
International Nuclear Information System (INIS)
Skenderis, Kostas; Townsend, Paul K
2007-01-01
The correspondence between domain-wall and cosmological solutions of gravity coupled to scalar fields is explained. Any domain-wall solutions that admit a Killing spinor are shown to correspond to a cosmology that admits a pseudo-Killing spinor; whereas the Killing spinor obeys a Dirac-type equation with Hermitian 'mass'-matrix, the corresponding pseudo-Killing spinor obeys a Dirac-type equation with a anti-Hermitian 'mass'-matrix. We comment on some implications of (pseudo)supersymmetry
Domain wall solitons and Hopf algebraic translational symmetries in noncommutative field theories
International Nuclear Information System (INIS)
Sasai, Yuya; Sasakura, Naoki
2008-01-01
Domain wall solitons are the simplest topological objects in field theories. The conventional translational symmetry in a field theory is the generator of a one-parameter family of domain wall solutions, and induces a massless moduli field which propagates along a domain wall. We study similar issues in braided noncommutative field theories possessing Hopf algebraic translational symmetries. As a concrete example, we discuss a domain wall soliton in the scalar φ 4 braided noncommutative field theory in Lie-algebraic noncommutative space-time, [x i ,x j ]=2iκε ijk x k (i,j,k=1,2,3), which has a Hopf algebraic translational symmetry. We first discuss the existence of a domain wall soliton in view of Derrick's theorem, and construct explicitly a one-parameter family of solutions in perturbation of the noncommutativity parameter κ. We then find the massless moduli field which propagates on the domain wall soliton. We further extend our analysis to the general Hopf algebraic translational symmetry
Domain wall propagation in Fe-rich amorphous microwires
Energy Technology Data Exchange (ETDEWEB)
Panina, L.V. [School of Comp. and Math., Univ. of Plymouth, Drake Circus, PL4 AA, Plymouth (United Kingdom); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20018 San Sebastian (Spain); Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20018 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)
2012-05-01
The domain wall (DW) propagation in magnetically bistable Fe{sub 74}Si{sub 11}B{sub 13}C{sub 2} amorphous microwires with metallic nucleus diameters of 12-16 {mu}m has been investigated in order to explain high DW velocities observed in Sixtus-Tonks like experiments. In micrometric wires, the boundary between two head-to-head domains is very elongated. The DW mobility normal to the wall surface is reduced by the domain aspect ratio and is in the range of a few m/s/Oe in the linear regime. The experimental results in the viscous regime could be quantitatively explained in terms of the domain length and normal mobility limited by the eddy currents and spin relaxation losses.
Dynamical evolution of domain walls in an expanding universe
Press, William H.; Ryden, Barbara S.; Spergel, David N.
1989-01-01
Whenever the potential of a scalar field has two or more separated, degenerate minima, domain walls form as the universe cools. The evolution of the resulting network of domain walls is calculated for the case of two potential minima in two and three dimensions, including wall annihilation, crossing, and reconnection effects. The nature of the evolution is found to be largely independent of the rate at which the universe expands. Wall annihilation and reconnection occur almost as fast as causality allows, so that the horizon volume is 'swept clean' and contains, at any time, only about one, fairly smooth, wall. Quantitative statistics are given. The total area of wall per volume decreases as the first power of time. The relative slowness of the decrease and the smoothness of the wall on the horizon scale make it impossible for walls to both generate large-scale structure and be consistent with quadrupole microwave background anisotropy limits.
Investigation of domain walls in GMO crystals by conoscope method
International Nuclear Information System (INIS)
Radchenko, I.R.; Filimonova, L.A.
1993-01-01
The patterns of polarized beam interference (conoscopic patterns) enable assessment of orientation and parameters of crystal's optical indicatrix. The presented conoscopic patterns of gadolinium molybdate crystal in the vicinity to plane and wedge-live domain walls differ from conoscopic patterns of the crystals far away from these walls which allows to spear about changes occurring in the crystal in the vicinity to domain walls
Domain walls collision in Fe-rich and Co-rich glass covered microwires
Directory of Open Access Journals (Sweden)
Gonzalez J.
2013-01-01
Full Text Available We report the results of the investigation of domain walls propagation in Fe-rich and Co-rich microwires performed using Sixtus-Tonks and magneto-optical Kerr effect techniques. It was found that under certain experimental conditions we are able to create the regime of the motion of two domain walls moving to opposite directions which terminates by the collision of the domain walls. Also the domain walls collision was visualized using magneto-optical Kerr effect microscope when the surface giant Barkhausen jump induced by circular magnetic field has been observed.
Domain-wall dynamics in glass-coated magnetic microwires
International Nuclear Information System (INIS)
Varga, R.; Zhukov, A.; Usov, N.; Blanco, J.M.; Gonzalez, J.; Zhukova, V.; Vojtanik, P.
2007-01-01
Glass-coated magnetic microwires with positive magnetostriction show peculiar domain structure that consists mostly of one large domain with magnetization-oriented axially. It was shown that small closure domains appear at the end of the microwire in order to decrease the stray fields. As a result of such domain structure, the magnetization reversal in axial direction runs through the depinning of one of such closure domains and subsequent propagation of the corresponding domain wall. Quite unusual domain-wall (DW) dynamics of the DW propagation predicted previously from the theory has been found in such amorphous microwires. In this paper, we are dealing with the DW dynamics of glass-coated microwires with small positive magnetostriction. The DW damping coming from the structural relaxation dominates at low temperatures as a result of the decrease of the mobility of the structural atomic-level defects. Negative critical propagation field points to the possible DW propagation without applied magnetic field. Probable explanation could be in terms of the effective mass of the DW
Spin motive forces due to magnetic vortices and domain walls
Lucassen, M.E.; Kruis, G.C.F.L.; Lavrijsen, R.; Swagten, H.J.M.; Koopmans, B.; Duine, R.A.
2011-01-01
We study spin motive forces, that is, spin-dependent forces and voltages induced by time-dependent magnetization textures, for moving magnetic vortices and domain walls. First, we consider the voltage generated by a one-dimensional field-driven domain wall. Next, we perform detailed calculations on
Large exchange-dominated domain wall velocities in antiferromagnetically coupled nanowires
Kuteifan, Majd; Lubarda, M. V.; Fu, S.; Chang, R.; Escobar, M. A.; Mangin, S.; Fullerton, E. E.; Lomakin, V.
2016-04-01
Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for methods of information storage and processing. A major obstacle for their practical use is the domain-wall velocity, which is traditionally limited for low fields and currents due to the Walker breakdown occurring when the driving component reaches a critical threshold value. We show through numerical and analytical modeling that the Walker breakdown limit can be extended or completely eliminated in antiferromagnetically coupled magnetic nanowires. These coupled nanowires allow for large domain-wall velocities driven by field and/or current as compared to conventional nanowires.
Influence of temperature on current-induced domain wall motion and its Walker breakdown
International Nuclear Information System (INIS)
Fan, Lvchao; Hu, Jingguo; Su, Yuanchang; Zhu, Jinrong
2016-01-01
The current-driven domain wall propagation along a thin ferromagnetic strip with thermal field is studied by means of micromagnetic simulations. The results show that the velocity of domain wall is almost independent of temperature until Walker breakdown happened. However the thermal field can suppress Walker breakdown and makes domain wall move faster. Further analysis indicates that the thermal field tends to keep the out-of-plane magnetic moment of the domain wall stay in high value, which can promote domain wall motion and suppress the Walker breakdown by breaking the period of domain wall transformation. - Highlights: • Influences of temperature on the displacement and the velocity of DW are shown. • The suppression of Walker breakdown by temperature is given. • The reason for suppressing Walker breakdown is analyzed. • The breaking transformation period of Walker breakdown by temperature is given.
Domain wall motion in ferromagnetic systems with perpendicular magnetization
International Nuclear Information System (INIS)
Szambolics, H.; Toussaint, J.-Ch.; Marty, A.; Miron, I.M.; Buda-Prejbeanu, L.D.
2009-01-01
Although we lack clear experimental evidence, apparently out-of-plane magnetized systems are better suited for spintronic applications than the in-plane magnetized ones, mainly due to the smaller current densities required for achieving domain wall motion. [Co/Pt] multilayers belong to the first category of materials, the out-of-plane magnetization orientation arising from the strong perpendicular magnetocrystalline anisotropy. If the magnetization arranges itself out-of-plane narrow Bloch walls occur. In the present paper, both field and current-driven domain wall motion have been investigated for this system, using micromagnetic simulations. Three types of geometries have been taken into account: bulk, thin film and wire, and for all of them a full comparison is done between the effect of the applied field and injected current. The reduction of the system's dimension induces the decrease of the critical field and the critical current, but it does not influence the domain wall displacement mechanism.
Domain wall manipulation in magnetic nanotubes induced by electric current pulses
International Nuclear Information System (INIS)
Otálora, J A; López-López, J A; Landeros, P; Núñez, A S
2012-01-01
We propose that the injection of electric currents can be used to independently manipulate the position and chirality of vortex-like domain walls in metallic ferromagnetic nanotubes. We support this proposal upon theoretical and numerical assessment of the magnetization dynamics driven by such currents. We show that proper interplay between the tube geometry, magnitude of the electric current and the duration of a current pulse, can be used to manipulate the position, velocity and chirality of a vortex domain wall. Our calculations suggest that domain wall velocities greater than 1 km s -1 can be achieved for tube diameters of the order of 30 nm and increasing with it. We also find that the transition from steady to precessional domain wall motion occurs for very high electric current densities, of the order of 10 13 A m -2 . Furthermore, the great stability displayed by such chiral magnetic configurations, and the reduced Ohmic loses provided by the current pulses, lead to highly reproducible and efficient domain wall reversal mechanisms.
Percolative Theory of Organic Magnetoresistance and Fringe-Field Magnetoresistance
Flatté, Michael E.
2013-03-01
A recently-introduced percolation theory for spin transport and magnetoresistance in organic semiconductors describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Increases in the spin-flip rate open up ``spin-blocked'' pathways to become viable conduction channels and hence, as the spin-flip rate changes with magnetic field, produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with measurements of the shape and saturation of measured magnetoresistance curves. We find that the threshold hopping distance is analogous to the branching parameter of a phenomenological two-site model, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance. Regimes of slow and fast hopping magnetoresistance are uniquely characterized by their line shapes. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory. Extensions to this theory also describe fringe-field magnetoresistance, which is the influence of fringe magnetic fields from a nearby unsaturated magnetic electrode on the conductance of an organic film. This theory agrees with several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect. All work done in collaboration with N. J. Harmon, and fringe-field magnetoresistance work in collaboration also with F. Macià, F. Wang, M. Wohlgenannt and A. D. Kent. This work was supported by an ARO MURI.
Reply to "Domain-growth kinetics of systems with soft walls''
DEFF Research Database (Denmark)
Mouritsen, Ole G.; Præstgaard, Eigil
1988-01-01
On the basis of computer-simulation results for three different models with soft domain walls it is argued that the zero-temperature domain-growth kinetics falls in a separate universality class characterized by a kinetic growth exponent n≃0.25. However, for finite temperatures there is a distinct...... crossover to Lifshitz-Allen-Cahn kinetics n=0.50, thus suggesting that the soft-wall and hard-wall universality classes become identical at finite temperatures....
Unidirectional effect in domain wall propagation observed in bistable glass-coated microwire
Energy Technology Data Exchange (ETDEWEB)
Onufer, J., E-mail: jozef.onufer@tuke.sk; Ziman, J., E-mail: jan.ziman@tuke.sk; Kladivová, M., E-mail: maria.kladivova@tuke.sk
2015-12-15
Systematic study of domain wall velocity versus applied magnetic field dependences in glass-coated amorphous Fe{sub 77.5}Si{sub 7.5}B{sub 15} wire was carried out, revealing the existence of a very interesting phenomenon. Domain wall mobility can be significantly different in cases when magnetization reversal caused by domain wall motion results in different orientation of magnetization. The magnitude and sign of this so-called unidirectional effect can change along the wire. There are also samples with weak unidirectional effect in which it is possible, in regions of higher values of applied magnetic field, to observe the highest wall velocities. It is very probable that damping of domain wall motion is responsible for this effect. As a hypothesis a mechanism based on eddy current damping of domain wall motion was proposed for interpretation of this effect. In the framework of this mechanism asymmetric and non-linear volt-ampere characteristics of the metal–glass interface might be responsible for the unidirectional effect. - Highlights: • Unidirectional effect in domain wall propagation was observed. • The magnitude and sign of the unidirectional effect can change along the wire. • A hypothesis for interpretation of the unidirectional effect is proposed.
Scaling properties of domain wall networks
International Nuclear Information System (INIS)
Leite, A. M. M.; Martins, C. J. A. P.
2011-01-01
We revisit the cosmological evolution of domain wall networks, taking advantage of recent improvements in computing power. We carry out high-resolution field theory simulations in two, three and four spatial dimensions to study the effects of dimensionality and damping on the evolution of the network. Our results are consistent with the expected scale-invariant evolution of the network, which suggests that previous hints of deviations from this behavior may have been due to the limited dynamical range of those simulations. We also use the results of very large (1024 3 ) simulations in three cosmological epochs to provide a calibration for the velocity-dependent one-scale model for domain walls: we numerically determine the two free model parameters to have the values c w =0.5±0.2 and k w =1.1±0.3.
Unidirectional Magnon-Driven Domain Wall Motion due to Interfacial Dzyaloshinskii-Moriya Interaction
Lee, Seo-Won
2018-03-28
We theoretically study magnon-driven motion of a tranverse domain wall in the presence of interfacial Dzyaloshinskii-Moriya interaction (DMI). Contrary to previous studies, the domain wall moves along the same direction regardless of the magnon-flow direction. Our symmetry analysis reveals that the odd order DMI contributions to the domain wall velocity are independent of the magnon-flow direction. Corresponding DMI-induced asymmetric transitions from a spin-wave state to another give rise to a large momentum transfer to the domain wall without nonreciprocity and much reflection. This counterintuitive unidirectional motion occurs not only for a spin wave with a single wavevector but also for thermal magnons with distributed wavevectors.
Unidirectional Magnon-Driven Domain Wall Motion due to Interfacial Dzyaloshinskii-Moriya Interaction
Lee, Seo-Won; Kim, Kyoung-Whan; Moon, Jung-Hwan; Go, Gyungchoon; Manchon, Aurelien; Lee, Hyun-Woo; Everschor-Sitte, Karin; Lee, Kyung-Jin
2018-01-01
We theoretically study magnon-driven motion of a tranverse domain wall in the presence of interfacial Dzyaloshinskii-Moriya interaction (DMI). Contrary to previous studies, the domain wall moves along the same direction regardless of the magnon-flow direction. Our symmetry analysis reveals that the odd order DMI contributions to the domain wall velocity are independent of the magnon-flow direction. Corresponding DMI-induced asymmetric transitions from a spin-wave state to another give rise to a large momentum transfer to the domain wall without nonreciprocity and much reflection. This counterintuitive unidirectional motion occurs not only for a spin wave with a single wavevector but also for thermal magnons with distributed wavevectors.
Domain walls and the C P anomaly in softly broken supersymmetric QCD
Draper, Patrick
2018-04-01
In ordinary QCD with light, degenerate, fundamental flavors, C P symmetry is spontaneously broken at θ =π , and domain wall solutions connecting the vacua can be constructed in chiral perturbation theory. In some cases the breaking of C P saturates a 't Hooft anomaly, and anomaly inflow requires nontrivial massless excitations on the domain walls. Analogously, C P can be spontaneously broken in supersymmetric QCD (SQCD) with light flavors and small soft breaking parameters. We study C P breaking and domain walls in softly broken SQCD with Nfcomputed at leading order in the soft breaking parameters, producing a phase diagram for the stable wall trajectory. We also comment on domain walls in the similar case of QCD with an adjoint and fundamental flavors, and on the impact of adding an axion in this theory.
Dispersive elastic properties of Dzyaloshinskii domain walls
Pellegren, James; Lau, Derek; Sokalski, Vincent
Recent studies on the asymmetric field-driven growth of magnetic bubble domains in perpendicular thin films exhibiting an interfacial Dzyaloshinskii-Moriya interaction (DMI) have provided a wealth of experimental evidence to validate models of creep phenomena, as key properties of the domain wall (DW) can be altered with the application of an external in-plane magnetic field. While asymmetric growth behavior has been attributed to the highly anisotropic DW energy, σ (θ) , which results from the combination of DMI and the in-plane field, many experimental results remain anomalous. In this work, we demonstrate that the anisotropy of DW energy alters the elastic response of the DW as characterized by the surface stiffness, σ (θ) = σ (θ) + σ (θ) , and evaluate the impact of this stiffness on the creep law. We find that at in-plane fields larger than and antiparallel to the effective field due to DMI, the DW stiffness decreases rapidly, suggesting that higher energy walls can actually become more mobile than their low energy counterparts. This result is consistent with experiments on CoNi multilayer films where velocity curves for domain walls with DMI fields parallel and antiparallel to the applied field cross over at high in-plane fields.
Magneto-optical study of domain wall dynamics and giant Barkhausen jump in magnetic microwires
International Nuclear Information System (INIS)
Chizhik, A.; Zhukov, A.; Blanco, J.M.; Gonzalez, J.
2012-01-01
Investigation of surface domain walls motion in Co-rich magnetic microwires has been performed in circular and axial magnetic fields. The dc axial magnetic field acceleration of the domain wall motion related to the influence of the axial field on the structure of the moving domain wall has been discovered. Pulsed axial magnetic field induced unidirectional motion of surface domain wall also has been found.
Coupling between Current and Dynamic Magnetization : from Domain Walls to Spin Waves
Lucassen, M. E.
2012-05-01
So far, we have derived some general expressions for domain-wall motion and the spin motive force. We have seen that the β parameter plays a large role in both subjects. In all chapters of this thesis, there is an emphasis on the determination of this parameter. We also know how to incorporate thermal fluctuations for rigid domain walls, as shown above. In Chapter 2, we study a different kind of fluctuations: shot noise. This noise is caused by the fact that an electric current consists of electrons, and therefore has fluctuations. In the process, we also compute transmission and reflection coefficients for a rigid domain wall, and from them the linear momentum transfer. More work on fluctuations is done in Chapter 3. Here, we consider a (extrinsically pinned) rigid domain wall under the influence of thermal fluctuations that induces a current via spin motive force. We compute how the resulting noise in the current is related to the β parameter. In Chapter 4 we look into in more detail into the spin motive forces from field driven domain walls. Using micro magnetic simulations, we compute the spin motive force due to vortex domain walls explicitly. As mentioned before, this gives qualitatively different results than for a rigid domain wall. The final subject in Chapter 5 is the application of the general expression for spin motive forces to magnons. Although this might seem to be unrelated to domain-wall motion, this calculation allows us to relate the β parameter to macroscopic transport coefficients. This work was supported by Stichting voor Fundamenteel Onderzoek der Materie (FOM), the Netherlands Organization for Scientific Research (NWO), and by the European Research Council (ERC) under the Seventh Framework Program (FP7).
Energy flux through the horizon in the black hole-domain wall systems
International Nuclear Information System (INIS)
Stojkovic, Dejan
2004-01-01
We study various configurations in which a domain wall (or cosmic string), described by the Nambu-Goto action, is embedded in a background space-time of a black hole in (3+1) and higher dimensional models. We calculate energy fluxes through the black hole horizon. In the simplest case, when a static domain wall enters the horizon of a static black hole perpendicularly, the energy flux is zero. In more complicated situations, where parameters which describe the domain wall surface are time and position dependent, the flux is non-vanishing is principle. These results are of importance in various conventional cosmological models which accommodate the existence of domain walls and strings and also in brane world scenarios. (author)
Trützschler, Julia; Sentosun, Kadir; Mozooni, Babak; Mattheis, Roland; McCord, Jeffrey
2016-08-04
High density magnetic domain wall gratings are imprinted in ferromagnetic-antiferromagnetic thin films by local ion irradiation by which alternating head-to-tail-to-head-to-tail and head-to-head-to-tail-to-tail spatially overlapping domain wall networks are formed. Unique magnetic domain processes result from the interaction of anchored domain walls. Non-linear magnetization response is introduced by the laterally distributed magnetic anisotropy phases. The locally varying magnetic charge distribution gives rise to localized and guided magnetization spin-wave modes directly constrained by the narrow domain wall cores. The exchange coupled multiphase material structure leads to unprecedented static and locally modified dynamic magnetic material properties.
Energy Technology Data Exchange (ETDEWEB)
Komine, Takashi, E-mail: komine@mx.ibaraki.ac.jp; Aono, Tomosuke [Faculty of Engineering, Ibaraki University 4-12-1, Nakanarusawa, Hitachi, Ibaraki, 316-8511 (Japan)
2016-05-15
We demonstrate current-induced domain wall motion in bilayer nanowire with synthetic antiferromagnetic (SAF) coupling by modeling two body problems for motion equations of domain wall. The influence of interlayer exchange coupling and magnetostatic interactions on current-induced domain wall motion in SAF nanowires was also investigated. By assuming the rigid wall model for translational motion, the interlayer exchange coupling and the magnetostatic interaction between walls and domains in SAF nanowires enhances domain wall speed without any spin-orbit-torque. The enhancement of domain wall speed was discussed by energy distribution as a function of wall angle configuration in bilayer nanowires.
Domain wall partition functions and KP
International Nuclear Information System (INIS)
Foda, O; Wheeler, M; Zuparic, M
2009-01-01
We observe that the partition function of the six-vertex model on a finite square lattice with domain wall boundary conditions is (a restriction of) a KP τ function and express it as an expectation value of charged free fermions (up to an overall normalization)
NMR and domain wall mobility in intermetallic compounds
International Nuclear Information System (INIS)
Guimaraes, A.P.; Sampaio, L.C.; Cunha, S.F.; Alves, K.M.B.
1991-01-01
The technique of pulsed NMR can be used to study the distribution of hyperfine fields in a magnetic matrix. The dynamics of the domain walls are relevant to the generation of NMR signals. In the present study on the (R x Y 1-x ) Fe 2 intermetallic compounds, the reduction in the signals is associated to increased propagation fields. This indicates that a smaller domain wall mobility is at the origin of these effects. NMR spectra in this system show the importance of direct and indirect (i.e., mediated by Fe atoms) terms in the transferred hyperfine field. (author)
Energy Technology Data Exchange (ETDEWEB)
Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)
2014-08-14
Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.
Rashba spin–orbit coupling effects on a current-induced domain wall motion
International Nuclear Information System (INIS)
Ryu, Jisu; Seo, Soo-Man; Lee, Kyung-Jin; Lee, Hyun-Woo
2012-01-01
A current-induced domain wall motion in magnetic nanowires with a strong structural inversion asymmetry [I.M. Miron, T. Moore, H. Szambolics, L.D. Buda-Prejbeanu, S. Auffret, B. Rodmacq, S. Pizzini, J. Vogel, M. Bonfim, A. Schuhl, G. Gaudin, Nat. Mat. 10 (2011) 419] seems to have novel features such as the domain wall motion along the current direction or the delay of the onset of the Walker breakdown. In such a highly asymmetric system, the Rashba spin–orbit coupling (RSOC) may affect a domain wall motion. We studied theoretically the RSOC effects on a domain wall motion and found that the RSOC, indeed, can induce the domain wall motion along the current direction in certain situations. It also delays the Walker breakdown and for a strong RSOC, the Walker breakdown does not occur at all. The RSOC effects are sensitive to the magnetic anisotropy of nanowires and also to the ratio between the Gilbert damping parameter α and the non-adiabaticity parameter β. - Highlights: ► Effects of Rashba spin–orbit coupling on a domain wall motion is calculated. ► The effects depend highly on the anisotropy of a magnetic system. ► It modifies the wall velocity for the system with a perpendicular magnetic anisotropy. ► The modified velocity can be along the current direction in certain situations. ► Rashba spin–orbit coupling also hinders the onset of the Walker breakdown.
Functional Properties at Domain Walls in BiFeO3: Electrical, Magnetic, and Structural investigations
He, Qing; Yang, C.-H.; Yu, P.; Gajek, M.; Seidel, J.; Ramesh, R.; Wang, F.; Chu, Y.-H.; Martin, L. W.; Spaldin, N.; Rother, A.
2009-03-01
BiFeO3 (BFO) is a widely studied robust ferroelectric, antiferromagnetic multiferroic. Conducting-atomic force microscopy studies reveal the presence of enhanced conductivity at certain types of domain walls in BFO. We have completed detailed TEM studies of the physical structure at these domain walls as well as in-depth DFT calculations of the evolution of electronic structure at these domain walls. These studies reveal two major contributions to the observed conduction: the formation of an electrostatic potential at the domain walls as well as a structurally-driven change in the electronic structure (i.e., a lower band gap locally) at the domain walls. We will discuss the use of optical characterization techniques as a way of probing this change in electronic structure at domain walls as well as detailed IV characterization both in atmospheric and UHV environments. Finally, the evolution of magnetism at these domain walls has been studied through the use of photoemission measurements. Initial findings point to a significant change in the magnetic order at these domain walls in BFO.
Alagoz, H. S.; Prasad, B.; Jeon, J.; Blamire, M. G.; Chow, K. H.; Jung, J.
2018-02-01
The subtle balance between the competing electronic phases in manganites due to complex interplay between spin, charge, and orbital degrees of freedom could allow one to modify the properties of electronically phase separated systems. In this paper, we show that the phase shift in the oscillatory magnetoresistance ρ (θ ) can be modified by engineering strain driven elongation of electronic domains in La0.3Pr0.4Ca0.3MnO3 (LPCMO) thin films. Strain-driven elongation of magnetic domains can produce different percolation paths and hence different anisotropic magnetoresistance responses. This tunability provides a unique control that is unattainable in conventional 3 d ferromagnetic metals and alloys.
The defects influence on domain wall propagation in bistable glass-coated microwires
International Nuclear Information System (INIS)
Rodionova, V.; Zhukova, V.; Ilyn, M.; Ipatov, M.; Perov, N.; Zhukov, A.
2012-01-01
We studied the domain wall (DW) dynamics of magnetically bistable amorphous glass-coated Fe 74 B 13 Si 11 C 2 microwires. In according to our experimental results magnetic field dependences of DW velocity of studied microwires can be divided into two groups: with uniform or uniformly accelerated DW propagation along the microwire. Strong correlation between the type of the magnetic field dependence of domain wall velocity, v(H), and the distribution of the local nucleation fields has been observed. Moreover, we observed abrupt increasing of DW velocity (jump) on the magnetic field dependences of the domain wall velocity, v(H), for the both types of the v(H) dependences. At the same time usual linear increasing of the domain wall velocity with magnetic field persists below these jumps. It was found that the jump height correlates with the location of nucleation place of the new domain wall. We have measured local nucleation field distribution in all the microwires. From local nucleation field distribution we have obtained the DW nucleation locations and estimated the jump height
The defects influence on domain wall propagation in bistable glass-coated microwires
Energy Technology Data Exchange (ETDEWEB)
Rodionova, V. [Magnetism Division, Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, San Sebastian 20018 (Spain); Zhukova, V., E-mail: valentina.zhukova@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, San Sebastian 20018 (Spain); Ilyn, M.; Ipatov, M. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, San Sebastian 20018 (Spain); Perov, N. [Magnetism Division, Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Zhukov, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, Bilbao 48011 (Spain)
2012-05-01
We studied the domain wall (DW) dynamics of magnetically bistable amorphous glass-coated Fe{sub 74}B{sub 13}Si{sub 11}C{sub 2} microwires. In according to our experimental results magnetic field dependences of DW velocity of studied microwires can be divided into two groups: with uniform or uniformly accelerated DW propagation along the microwire. Strong correlation between the type of the magnetic field dependence of domain wall velocity, v(H), and the distribution of the local nucleation fields has been observed. Moreover, we observed abrupt increasing of DW velocity (jump) on the magnetic field dependences of the domain wall velocity, v(H), for the both types of the v(H) dependences. At the same time usual linear increasing of the domain wall velocity with magnetic field persists below these jumps. It was found that the jump height correlates with the location of nucleation place of the new domain wall. We have measured local nucleation field distribution in all the microwires. From local nucleation field distribution we have obtained the DW nucleation locations and estimated the jump height.
One-dimensional in-plane edge domain walls in ultrathin ferromagnetic films
Lund, Ross G.; Muratov, Cyrill B.; Slastikov, Valeriy V.
2018-03-01
We study existence and properties of 1D edge domain walls in ultrathin ferromagnetic films with uniaxial in-plane magnetic anisotropy. In these materials, the magnetization vector is constrained to lie entirely in the film plane, with the preferred directions dictated by the magnetocrystalline easy axis. We consider magnetization profiles in the vicinity of a straight film edge oriented at an arbitrary angle with respect to the easy axis. To minimize the micromagnetic energy, these profiles form transition layers in which the magnetization vector rotates away from the direction of the easy axis to align with the film edge. We prove existence of edge domain walls as minimizers of the appropriate 1D micromagnetic energy functional and show that they are classical solutions of the associated Euler-Lagrange equation with a Dirichlet boundary condition at the edge. We also perform a numerical study of these 1D domain walls and uncover further properties of these domain wall profiles.
Quantum-induced interactions in the moduli space of degenerate BPS domain walls
International Nuclear Information System (INIS)
Alonso-Izquierdo, A.; Guilarte, J. Mateos
2014-01-01
In this paper quantum effects are investigated in a very special two-scalar field model having a moduli space of BPS topological defects. In a (1+1)-dimensional space-time the defects are classically degenerate in mass kinks, but in (3+1) dimensions the kinks become BPS domain walls, all of them sharing the same surface tension at the classical level. The heat kernel/zeta function regularization method will be used to control the divergences induced by the quantum kink and domain wall fluctuations. A generalization of the Gilkey-DeWitt-Avramidi heat kernel expansion will be developed in order to accommodate the infrared divergences due to zero modes in the spectra of the second-order kink and domain wall fluctuation operators, which are respectively N=2×N=2 matrix ordinary or partial differential operators. Use of these tools in the spectral zeta function associated with the Hessian operators paves the way to obtain general formulas for the one-loop kink mass and domain wall tension shifts in any (1+1)- or (3+1)-dimensional N-component scalar field theory model. Application of these formulae to the BPS kinks or domain walls of the N=2 model mentioned above reveals the breaking of the classical mass or surface tension degeneracy at the quantum level. Because the main parameter distinguishing each member in the BPS kink or domain wall moduli space is essentially the distance between the centers of two basic kinks or walls, the breaking of the degeneracy amounts to the surge in quantum-induced forces between the two constituent topological defects. The differences in surface tension induced by one-loop fluctuations of BPS walls give rise mainly to attractive forces between the constituent walls except if the two basic walls are very far apart. Repulsive forces between two close walls only arise if the coupling approaches the critical value from below
Domain wall network as QCD vacuum and the chromomagnetic trap formation under extreme conditions
International Nuclear Information System (INIS)
Nedelko, Sergei N.; Voronin, Vladimir E.
2015-01-01
The ensemble of Euclidean gluon field configurations represented by the domain wall network is considered. A single domain wall is given by the sine-Gordon kink for the angle between chromomagnetic and chromoelectric components of the gauge field. The domain wall separates the regions with Abelian self-dual and anti-self-dual fields. The network of the domain wall defects is introduced as a combination of multiplicative and additive superpositions of kinks. The character of the spectrum and eigenmodes of color-charged fluctuations in the presence of the domain wall network is discussed. Conditions for the formation of a stable thick domain wall junction (the chromomagnetic trap) during heavy-ion collisions are discussed, and the spectrum of color-charged quasi-particles inside the trap is evaluated. An important observation is the existence of the critical size L c of a single trap stable against gluon tachyonic modes. The size L c is related to the value of gluon condensate left angle g 2 F 2 right angle. The growth of large lumps of merged chromomagnetic traps and the concept of the confinement-deconfinement transition in terms of the ensemble of domain wall networks are outlined. (orig.)
Eavesdropping on spin waves inside the domain-wall nanochannel via three-magnon processes
Zhang, Beining; Wang, Zhenyu; Cao, Yunshan; Yan, Peng; Wang, X. R.
2018-03-01
One recent breakthrough in the field of magnonics is the experimental realization of reconfigurable spin-wave nanochannels formed by a magnetic domain wall with a width of 10-100 nm [Wagner et al., Nat. Nano. 11, 432 (2016), 10.1038/nnano.2015.339]. This remarkable progress enables an energy-efficient spin-wave propagation with a well-defined wave vector along its propagating path inside the wall. In the mentioned experiment, a microfocus Brillouin light scattering spectroscopy was taken in a line-scans manner to measure the frequency of the bounded spin wave. Due to their localization nature, the confined spin waves can hardly be detected from outside the wall channel, which guarantees the information security to some extent. In this work, we theoretically propose a scheme to detect/eavesdrop on the spin waves inside the domain-wall nanochannel via nonlinear three-magnon processes. We send a spin wave (ωi,ki) in one magnetic domain to interact with the bounded mode (ωb,kb) in the wall, where kb is parallel with the domain-wall channel defined as the z ̂ axis. Two kinds of three-magnon processes, i.e., confluence and splitting, are expected to occur. The confluence process is conventional: conservation of energy and momentum parallel with the wall indicates a transmitted wave in the opposite domain with ω (k ) =ωi+ωb and (ki+kb-k ) .z ̂=0 , while the momentum perpendicular to the domain wall is not necessary to be conserved due to the nonuniform internal field near the wall. We predict a stimulated three-magnon splitting (or "magnon laser") effect: the presence of a bound magnon propagating along the domain wall channel assists the splitting of the incident wave into two modes, one is ω1=ωb,k1=kb identical to the bound mode in the channel, and the other one is ω2=ωi-ωb with (ki-kb-k2) .z ̂=0 propagating in the opposite magnetic domain. Micromagnetic simulations confirm our theoretical analysis. These results demonstrate that one is able to uniquely
International Nuclear Information System (INIS)
Zaanen, J.; Horbach, M.L.; van Saarloos, W.
1996-01-01
Evidence is accumulating that the electron liquid in the cuprate superconductors is characterized by many-hole correlations of the charged magnetic domain-wall type. Here we focus on the strong-coupling limit where all holes are bound to domain walls. We assert that at high temperatures a classical domain-wall fluid is realized and show that the dynamics of such a fluid is characterized by spatial and temporal crossover scales set by temperature itself. The fundamental parameters of this fluid are such that the domain-wall motions dominate the low-frequency spin fluctuations and we derive predictions for the behavior of the dynamical magnetic susceptibility. We argue that a crossover occurs from a high-temperature classical to a low-temperature quantum regime, in direct analogy with helium. We discuss some general characteristics of the domain-wall quantum liquid, realized at low temperatures. copyright 1996 The American Physical Society
QCD axion dark matter from long-lived domain walls during matter domination
Harigaya, Keisuke; Kawasaki, Masahiro
2018-01-01
The domain wall problem of the Peccei–Quinn mechanism can be solved if the Peccei–Quinn symmetry is explicitly broken by a small amount. Domain walls decay into axions, which may account for dark matter of the universe. This scheme is however strongly constrained by overproduction of axions unless the phase of the explicit breaking term is tuned. We investigate the case where the universe is matter-dominated around the temperature of the MeV scale and domain walls decay during this matter dom...
Magnetic field control of 90°, 180°, and 360° domain wall resistance
Majidi, Roya
2012-10-01
In the present work, we have compared the resistance of the 90°, 180°, and 360° domain walls in the presence of external magnetic field. The calculations are based on the Boltzmann transport equation within the relaxation time approximation. One-dimensional Néel-type domain walls between two domains whose magnetization differs by angle of 90°, 180°, and 360° are considered. The results indicate that the resistance of the 360° DW is more considerable than that of the 90° and 180° DWs. It is also found that the domain wall resistance can be controlled by applying transverse magnetic field. Increasing the strength of the external magnetic field enhances the domain wall resistance. In providing spintronic devices based on magnetic nanomaterials, considering and controlling the effect of domain wall on resistivity are essential.
Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry
Fujita, T. C.; Kozuka, Y.; Uchida, M.; Tsukazaki, A.; Arima, T.; Kawasaki, M.
2015-01-01
A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by all-in-all-out spin ordering. Here, we report on the fabrication and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that one of the two degenerate all-in-all-out domain structures, which are connected by time-reversal operation, can be selectively formed by the polarity of the cooling magnetic field. Once formed, the domain is robust against an oppositely polarised magnetic field, as evidenced by an unusual odd field dependent term in the magnetoresistance and an anomalous term in the Hall resistance. Our findings pave the way for exploring the predicted novel quantum transport phenomenon at the surfaces/interfaces or magnetic domain walls of pyrochlore iridates. PMID:25959576
Dynamics of cylindrical domain walls in smectic C liquid crystals
International Nuclear Information System (INIS)
Stewart, I W; Wigham, E J
2009-01-01
An analysis of the dynamics of cylindrical domain walls in planar aligned samples of smectic C liquid crystals is presented. A circular magnetic field, induced by an electric current, drives a time-dependent reorientation of the corresponding radially dependent director field. Nonlinear approximations to the relevant nonlinear dynamic equation, derived from smectic continuum theory, are solved in a comoving coordinated frame: exact solutions are found for a π-wall and numerical solutions are calculated for π/2-walls. Each calculation begins with an assumed initial state for the director that is a prescribed cylindrical domain wall. Such an initial wall will proceed to expand or contract as its central core propagates radially inwards or outwards, depending on the boundary conditions for the director, the elastic constants, the magnitude of the field and the sign of the magnetic anisotropy of the liquid crystal
Characteristics of domain wall chirality and propagation in a Y-junction nanowire
Energy Technology Data Exchange (ETDEWEB)
Kwak, W.-Y.; Yoon, Seungha; Kwon, J.-H. [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Grünberg, P. [Gruenberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Cho, B. K., E-mail: chobk@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Gruenberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of)
2016-01-14
Chirality-dependent propagation of transverse wall along a nanowire was investigated using a Y-junction with spin-valve structure. It was found that the Y-junction can be used for convenient and effective electric detection of transverse domain wall chirality, especially in a nanowire with sub-200 nm width, where it is difficult to electrically detect chirality using conventional artificial defect, such as a notch, due to small resistance change. Domain wall propagation path in the Y-junction was found to be determined by the wall chirality, whether clockwise or counterclockwise. Using the Y-junction nanowire, characteristics of domain wall chirality that was nucleated in a nucleation pad, attached at the end of a nanowire, were studied and found to be in good agreement with the results of theoretical simulation.
Modulated Magnetic Nanowires for Controlling Domain Wall Motion: Toward 3D Magnetic Memories
Ivanov, Yurii P.; Chuvilin, Andrey; Lopatin, Sergei; Kosel, Jü rgen
2016-01-01
Cylindrical magnetic nanowires are attractive materials for next generation data storage devices owing to the theoretically achievable high domain wall velocity and their efficient fabrication in highly dense arrays. In order to obtain control over domain wall motion, reliable and well-defined pinning sites are required. Here, we show that modulated nanowires consisting of alternating nickel and cobalt sections facilitate efficient domain wall pinning at the interfaces of those sections. By combining electron holography with micromagnetic simulations, the pinning effect can be explained by the interaction of the stray fields generated at the interface and the domain wall. Utilizing a modified differential phase contrast imaging, we visualized the pinned domain wall with a high resolution, revealing its three-dimensional vortex structure with the previously predicted Bloch point at its center. These findings suggest the potential of modulated nanowires for the development of high-density, three-dimensional data storage devices. © 2016 American Chemical Society.
Modulated Magnetic Nanowires for Controlling Domain Wall Motion: Toward 3D Magnetic Memories
Ivanov, Yurii P.
2016-05-03
Cylindrical magnetic nanowires are attractive materials for next generation data storage devices owing to the theoretically achievable high domain wall velocity and their efficient fabrication in highly dense arrays. In order to obtain control over domain wall motion, reliable and well-defined pinning sites are required. Here, we show that modulated nanowires consisting of alternating nickel and cobalt sections facilitate efficient domain wall pinning at the interfaces of those sections. By combining electron holography with micromagnetic simulations, the pinning effect can be explained by the interaction of the stray fields generated at the interface and the domain wall. Utilizing a modified differential phase contrast imaging, we visualized the pinned domain wall with a high resolution, revealing its three-dimensional vortex structure with the previously predicted Bloch point at its center. These findings suggest the potential of modulated nanowires for the development of high-density, three-dimensional data storage devices. © 2016 American Chemical Society.
Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films
International Nuclear Information System (INIS)
Kim, D J; Gruverman, A; Connell, J G; Seo, S S A
2016-01-01
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)
Counting domain walls in N=1 super Yang-Mills theory
International Nuclear Information System (INIS)
Ritz, Adam; Shifman, Mikhail; Vainshtein, Arkady
2002-01-01
We study the multiplicity of BPS domain walls in N=1 super Yang-Mills theory, by passing to a weakly coupled Higgs phase through the addition of fundamental matter. The number of domain walls connecting two specified vacuum states is then determined via the Witten index of the induced world volume theory, which is invariant under the deformation to the Higgs phase. The world volume theory is a sigma model with a Grassmanian target space which arises as the coset associated with the global symmetries broken by the wall solution. Imposing a suitable infrared regulator, the result is found to agree with recent work of Acharya and Vafa in which the walls were realized as wrapped D4-branes in type IIA string theory
Domain-walls motion in glass-coated CoFeSiB amorphous microwires
Energy Technology Data Exchange (ETDEWEB)
Antonov, A.S. E-mail: as.antonov@mtu-net.ru; Buznikov, N.A.; Granovsky, A.B.; Joura, A.V.; Rakhmanov, A.L.; Yakunin, A.M
2002-08-01
A method for observation of domain-walls motion in amorphous microwires with circular magnetic anisotropy is proposed. Using the method, the magnetization reversal of glass-coated Co-based microwires induced by current pulses of high amplitude is studied. The magnetization reversal is shown to occur due to the nucleation of the domain walls at the sample ends and their subsequent motion along the microwire. The dependencies of the domain-wall velocity on the current pulse amplitude and a longitudinal DC magnetic field are measured. A model describing main features of experimental data is presented.
Domain-walls motion in glass-coated CoFeSiB amorphous microwires
International Nuclear Information System (INIS)
Antonov, A.S.; Buznikov, N.A.; Granovsky, A.B.; Joura, A.V.; Rakhmanov, A.L.; Yakunin, A.M.
2002-01-01
A method for observation of domain-walls motion in amorphous microwires with circular magnetic anisotropy is proposed. Using the method, the magnetization reversal of glass-coated Co-based microwires induced by current pulses of high amplitude is studied. The magnetization reversal is shown to occur due to the nucleation of the domain walls at the sample ends and their subsequent motion along the microwire. The dependencies of the domain-wall velocity on the current pulse amplitude and a longitudinal DC magnetic field are measured. A model describing main features of experimental data is presented
Induced motion of domain walls in multiferroics with quadratic interaction
Energy Technology Data Exchange (ETDEWEB)
Gerasimchuk, Victor S., E-mail: viktor.gera@gmail.com [National Technical University of Ukraine “Kyiv Polytechnic Institute”, Peremohy Avenue 37, 03056 Kiev (Ukraine); Shitov, Anatoliy A., E-mail: shitov@mail.ru [Donbass National Academy of Civil Engineering, Derzhavina Street 2, 86123 Makeevka, Donetsk Region (Ukraine)
2013-10-15
We theoretically study the dynamics of 180-degree domain wall of the ab-type in magnetic materials with quadratic magnetoelectric interaction in external alternating magnetic and electric fields. The features of the oscillatory and translational motions of the domain walls and stripe structures depending on the parameters of external fields and characteristics of the multiferroics are discussed. The possibility of the domain walls drift in a purely electric field is established. - Highlights: • We study DW and stripe DS in multiferroics with quadratic magnetoelectric interaction. • We build up the theory of oscillatory and translational (drift) DW and DS motion. • DW motion can be caused by crossed alternating electric and magnetic fields. • DW motion can be caused by alternating “pure” electric field. • DW drift velocity is formed by the AFM and Dzyaloshinskii interaction terms.
Chiral symmetry breaking for domain wall fermions in quenched lattice QCD
International Nuclear Information System (INIS)
Wu Lingling
2001-01-01
The domain wall fermion formulation exhibits full chiral symmetry for finite lattice spacing except for the effects of mixing between the domain walls. Close to the continuum limit these symmetry breaking effects should be described by a single residual mass. We determine this mass from the conservation law obeyed by the conserved axial current in quenched simulations with β = 5.7 and 6.0 and domain wall separations varying between 12 and 48 on 8 3 x 32 and 16 3 x 32 lattices. Using the resulting values for the residual mass we perform two complete and independent calculations of the pion decay constant. Good agreement is found between these two methods and with experiment
Nonextreme and ultraextreme domain walls and their global space-times
International Nuclear Information System (INIS)
Cvetic, M.; Griffies, S.; Soleng, H.H.
1993-01-01
Nonextreme walls (bubbles with two insides) and ultraextreme walls (bubbles of false vacuum decay) are discussed. Their respective energy densities are higher and lower than that of the corresponding extreme (supersymmetric), planar domain wall. These singularity free space-times exhibit nontrivial causal structure analogous to certain nonextreme black holes. We focus on anti--de Sitter--Minkowski walls and comment on Minkowski-Minkowski walls with trivial extreme limit, as well as walls adjacent to de Sitter space-times with no extreme limit
International Nuclear Information System (INIS)
Fontcuberta, J.
1999-01-01
In 1986 Alex Mueller and Georg Bednorz of IBM Zurich discovered high-temperature superconductivity in copper-based oxides. This finding, which was rewarded with the Nobel Prize for Physics in the following year, triggered intense research into the properties of the transition metal oxides. Since then scientists have questioned the very nature of the metallic state in these materials. A few years after the initial discovery, in 1993, more excitement greeted reports that certain manganese oxides showed a huge change in electrical resistivity when a magnetic field was applied. This effect is generally known as magnetoresistance, but the resistivity change observed in these oxides was so large that it could not be compared with any other forms of magnetoresistance. The effect observed in these materials the manganese perovskites was therefore dubbed ''colossal'' magnetoresistance to distinguish it from the giant magnetoresistance observed in magnetic multilayers. In this article the author explains why magnetoresistance is an expanding field of physics research. (UK)
Domain wall theory and exchange stiffness in Co/Pd multilayers
Kambersky, V.; Kambersky, V.; de Haan, P.; Simsova, J.; Porthun, S.; Porthun, S.; Gemperle, R.; Lodder, J.C.
1996-01-01
The stripe model of domain structure in multilayers is studied by micromagnetic simulation. The results indicate a strong reduction of the effective domain wall energy (by dipolar effects). Domain width measurements on sputtered Co/Pd multilayers are compared with the theory. The estimated exchange
Domain walls dynamics in the amorphous ribbon with a helical magnetic anisotropy
International Nuclear Information System (INIS)
Zhmetko, D.N.; Savin, V.V.; Lemish, P.V.; Troschenkov, Y.N.
2006-01-01
The damping mechanism for motion of domain walls, which form the sandwich structure and move from the middle plane of the ribbon to opposite surfaces during the dynamic magnetization reversal, have been investigated. The difference between the real and ideal sandwich domain structure, the actual distribution of the anisotropy easy directions through the ribbon thickness and the M-bar s deviation from local easy directions under the action of applied magnetic field have been taken into account. It was revealed that the maximum of the total damping coefficient β tot (x) near the half-way of the domain wall run is due to the influence of the magnetic stray fields. These fields have a character of irregular oscillations and are directed approximately perpendicular to the local easy direction of the ribbon layer through which the domain wall propagates. The damping coefficient β e.c. (x) determined by eddy-currents has the maximal value close to the ribbon middle and decreases linearly to zero when the domain wall approaches the ribbon surface
Phenomenology of the domain walls in thin ferromagnetic films
International Nuclear Information System (INIS)
Adam, G.
1978-01-01
The basic concepts and the main theoretical methods developed in the study of the domain walls in thin ferromagnetic films are given in this review. First, an insight into the origins and the classification criteria of the conceptually different wall structures is obtained by elementary considerations which are mainly based on the experimentally available data. Then, the more subtle aspect of the wall models dimensionality in soft ferromagnetic films is discussed. Finally, the various theoretical calculation methods of the wall parameters are summarized. (author)
Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi
Casper, Frederick; Felser, Claudia
2007-01-01
The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.
Collision of domain walls in asymptotically anti-de Sitter spacetime
International Nuclear Information System (INIS)
Takamizu, Yu-ichi; Maeda, Kei-ichi
2006-01-01
We study collision of two domain walls in five-dimensional asymptotically anti-de Sitter spacetime. This may provide the reheating mechanism of an ekpyrotic (or cyclic) brane universe, in which two Bogomol'nyi-Prasad-Sommerfield branes collide and evolve into a hot big bang universe. We evaluate a change of scalar field making the domain wall and can investigate the effect of a negative cosmological term in the bulk to the collision process and the evolution of our universe
Webs of domain walls in supersymmetric gauge theories
International Nuclear Information System (INIS)
Eto, Minoru; Isozumi, Youichi; Nitta, Muneto; Ohashi, Keisuke; Sakai, Norisuke
2005-01-01
Webs of domain walls are constructed as 1/4 Bogomol'nyi-Prasad-Sommerfield (BPS) states in d=4, N=2 supersymmetric U(N C ) gauge theories with N F hypermultiplets in the fundamental representation. Webs of walls can contain any numbers of external legs and loops like (p,q) string/5-brane webs. We find the moduli space M of a 1/4 BPS equation for wall webs to be the complex Grassmann manifold. When moduli spaces of 1/2 BPS states (parallel walls) and the vacua are removed from M, the noncompact moduli space of genuine 1/4 BPS wall webs is obtained. All the solutions are obtained explicitly and exactly in the strong gauge coupling limit. In the case of Abelian gauge theory, we work out the correspondence between configurations of wall web and the moduli space CP N F -1
International Nuclear Information System (INIS)
Alija, A; Sobrado, I; Rodriguez-RodrIguez, G; Velez, M; Alameda, J M; MartIn, J I; Parrondo, J M R
2010-01-01
Micromagnetic simulations have been performed in uniaxial magnetic films with 2D array of asymmetric arrow shape holes. In order to understand the asymmetric pinning potential created by the holes, different boundary geometries conditions are used on the simulations. The depinning fields for forward and backward domain wall propagation have been calculated by the analysis of the energy landscapes as a function of the domain wall position. Domain wall depinning occurs preferentially at the free ends of the domain wall at the film boundaries. We have found that the domain wall propagation is different at the top/bottom boundaries of the simulated film which can be understood in terms of the magnetostatic energy and the chirality of the domain wall.
Wall thickness dependence of the scaling law for ferroic stripe domains
International Nuclear Information System (INIS)
Catalan, G; Scott, J F; Schilling, A; Gregg, J M
2007-01-01
The periodicity of 180 0 stripe domains as a function of crystal thickness scales with the width of the domain walls, both for ferroelectric and for ferromagnetic materials. Here we derive an analytical expression for the generalized ferroic scaling factor and use this to calculate the domain wall thickness and gradient coefficients (exchange constants) in some ferroelectric and ferromagnetic materials. We then use these to discuss some of the wider implications for the physics of ferroelectric nanodevices and periodically poled photonic crystals. (fast track communication)
Gapped fermionic spectrum from a domain wall in seven dimension
Mukhopadhyay, Subir; Rai, Nishal
2018-05-01
We obtain a domain wall solution in maximally gauged seven dimensional supergravity, which interpolates between two AdS spaces and spontaneously breaks a U (1) symmetry. We analyse frequency dependence of conductivity and find power law behaviour at low frequency. We consider certain fermions of supergravity in the background of this domain wall and compute holographic spectral function of the operators in the dual six dimensional theory. We find fermionic operators involving bosons with non-zero expectation value lead to gapped spectrum.
Magnetoresistance effect in permalloy nanowires with various types of notches
Gao, Y.; You, B.; Wang, J.; Yuan, Y.; Wei, L. J.; Tu, H. Q.; Zhang, W.; Du, J.
2018-05-01
Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller) change of resistance always corresponds to larger (smaller) depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.
Current-induced domain wall motion in magnetic nanowires with spatial variation
International Nuclear Information System (INIS)
Ieda, Jun'ichi; Sugishita, Hiroki; Maekawa, Sadamichi
2010-01-01
We model current-induced domain wall motion in magnetic nanowires with the variable width. Employing the collective coordinate method we trace the wall dynamics. The effect of the width modulation is implemented by spatial dependence of an effective magnetic field. The wall destination in the potential energy landscape due to the magnetic anisotropy and the spatial nonuniformity is obtained as a function of the current density. For a nanowire of a periodically modulated width, we identify three (pinned, nonlinear, and linear) current density regimes for current-induced wall motion. The threshold current densities depend on the pulse duration as well as the magnitude of wire modulation. In the nonlinear regime, application of ns order current pulses results in wall displacement which opposes or exceeds the prediction of the spin transfer mechanism. The finding explains stochastic nature of the domain wall displacement observed in recent experiments.
Simulations of super-structure domain walls in two dimensional assemblies of magnetic nanoparticles
International Nuclear Information System (INIS)
Jordanovic, J.; Frandsen, C.; Beleggia, M.; Schiøtz, J.
2015-01-01
We simulate the formation of domain walls in two-dimensional assemblies of magnetic nanoparticles. Particle parameters are chosen to match recent electron holography and Lorentz microscopy studies of almost monodisperse cobalt nanoparticles assembled into regular, elongated lattices. As the particles are small enough to consist of a single magnetic domain each, their magnetic interactions can be described by a spin model in which each particle is assigned a macroscopic “superspin.” Thus, the magnetic behaviour of these lattices may be compared to magnetic crystals with nanoparticle superspins taking the role of the atomic spins. The coupling is, however, different. The superspins interact only by dipolar interactions as exchange coupling between individual nanoparticles may be neglected due to interparticle spacing. We observe that it is energetically favorable to introduce domain walls oriented along the long dimension of nanoparticle assemblies rather than along the short dimension. This is unlike what is typically observed in continuous magnetic materials, where the exchange interaction introduces an energetic cost proportional to the area of the domain walls. Structural disorder, which will always be present in realistic assemblies, pins longitudinal domain walls when the external field is reversed, and makes a gradual reversal of the magnetization by migration of longitudinal domain walls possible, in agreement with previous experimental results
Supertube domain walls and elimination of closed timelike curves in string theory
International Nuclear Information System (INIS)
Drukker, Nadav
2004-01-01
We show that some novel physics of supertubes removes closed timelike curves from many supersymmetric spaces which naively suffer from this problem. The main claim is that supertubes naturally form domain walls, so while analytical continuation of the metric would lead to closed timelike curves, across the domain wall the metric is nondifferentiable, and the closed timelike curves are eliminated. In the examples we study, the metric inside the domain wall is always of the Goedel type, while outside the shell it looks like a localized rotating object, often a rotating black hole. Thus this mechanism prevents the appearance of closed timelike curves behind the horizons of certain rotating black holes
Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires
Franchin, Matteo; Knittel, Andreas; Albert, Maximilian; Chernyshenko, Dmitri S.; Fischbacher, Thomas; Prabhakar, Anil; Fangohr, Hans
2011-09-01
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with pinning centers, which may be engineered, for example, through modulations in the nanowire geometry (such as notches or extrusions) or in the magnetic properties of the material. In this paper we study the motion and depinning of transverse domain walls through pinning centers in ferromagnetic cylindrical nanowires. We use (i) magnetic fields and (ii) spin-polarized currents to drive the domain walls along the wire. The pinning centers are modelled as a section of the nanowire which exhibits a uniaxial crystal anisotropy where the anisotropy easy axis and the wire axis enclose a variable angle θP. Using (i) magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the pinning center differ by 30%. On the contrary, using (ii) spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density (observed for θP=0∘, i.e., anisotropy axis pointing parallel to the wire axis) and the maximum value (for θP=90∘, i.e., anisotropy axis perpendicular to the wire axis). We study the depinning current density as a function of the height of the energy barrier of the pinning center using numerical and analytical methods. We find that for an industry standard energy barrier of 40kBT, a depinning current of about 5μA (corresponding to a current density of 6×1010A/m2 in a nanowire of 10nm diameter) is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design
Chung, Seok-Hwan
This work focuses on two largely unexplored phenomena in micromagnetics: the temperature-driven paramagnetic insulator to ferromagnetic (FM) metallic phase transition in perovskite manganite and ballistic magnetoresistance in spin-polarized nanocontacts. To investigate the phase transition, an off-the-shelf commercial scanning force microscope was redesigned for operation at temperatures from 350 K to 100 K. This adaptation is elaborated in this thesis. Using this system, both ferromagnetic and charge-ordered domain structures of (La 1-xPrx)0.67Ca0.33MnO3 thin film were observed by magnetic force microscopy (MFM) and electric force microscopy (EFM) operated in the vicinity of the peak resistance temperature (Tp). Predominantly in-plane oriented FM domains of sub-micrometer size emerge below Tp and their local magnetic moment increased as the temperature is reduced. Charge-ordered insulating regions show a strong electrostatic interaction with an EFM tip at a few degrees above Tp and the interaction correlates well with the temperature dependence of resistivity of the film. Cross-correlation analysis between topography and magnetic structure on several substrates indicates FM domains form on the flat regions of the surface, while charge ordering occurs at surface protrusions. In the investigation of ballistic magnetoresistance, new results on half-metallic ferromagnets formed by atomic or nanometer contacts of CrO2-CrO 2 and CrO2-Ni are presented showing magnetoconductance as high as 400%. Analysis of the magnetoconductance versus conductance data for all materials known to exhibit so-called ballistic magnetoresistance strongly suggests that magnetoconductance of nanocontacts follows a universal mechanism. If the maximum magnetoconductance is normalized to unity and the conductance is scaled with the resistivity of the material, then all data points fall onto a universal curve independent of the contact material and the transport mechanism. The analysis has been
Chiba, D; Kawaguchi, M; Fukami, S; Ishiwata, N; Shimamura, K; Kobayashi, K; Ono, T
2012-06-06
Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.
Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents
Sharma, Sanchar; Muralidharan, Bhaskaran; Tulapurkar, Ashwin
2015-09-01
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.
Current-induced domain wall motion in nanoscale ferromagnetic elements
Energy Technology Data Exchange (ETDEWEB)
Malinowski, G [Laboratoire de Physique des Solides, CNRS, Universite Paris-sud 11, 91405 Orsay Cedex (France); Boulle, O [SPINTEC, CEA/CNRS/UJF/GINP, INAC, 38054 Grenoble Cedex 9 (France); Klaeui, M, E-mail: Klaeui@uni-mainz.de [SwissFEL, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory of Nanomagnetism and Spin Dynamics, Ecole Polytechnique Federale de Lausanne (EPFL), 1015 Lausanne (Switzerland)
2011-09-28
We review the details of domain wall (DW) propagation due to spin-polarized currents that could potentially be used in magnetic data storage devices based on domains and DWs. We discuss briefly the basics of the underlying spin torque effect and show how the two torques arising from the interaction between the spin-polarized charge carriers and the magnetization lead to complex dynamics of a spin texture such as a DW. By direct imaging we show how confined DWs in nanowires can be displaced using currents in in-plane soft-magnetic materials, and that when using short pulses, fast velocities can be attained. For high-anisotropy out-of-plane magnetized wires with narrow DWs we present approaches to deducing the torque terms and show that in these materials potentially more efficient domain wall motion could be achieved.
Recent progress in experiment and theory of giant magnetoresistance in magnetic nanocontacts
International Nuclear Information System (INIS)
Tagirov, L. R.
2005-01-01
Full text: The experiment and theory of magnetoresistance (MR) in nanosize point contacts made of ferromagnetic metals is reviewed. The story begins from the series of experiments on Ni-Ni and Co-Co nanocontacts [1,2] in which an extraordinary high MR, 200-300%, has been observed at room temperature (see also the review [3] and references therein). Two basic mechanisms of nanosize contact MR have been proposed: enhancement of impurity scattering in the domain wall [2] and scattering of electrons by the geometrically constrained domain wall [4]. The theories were able to explain the values of magnetoresistance observed in the experiments. Very shortly afterwards further experiments raised the size of the effect till few thousand percents [5,6]. There was a discussion in the literature and scientific meetings that the observed giant MR was an artefact caused by the magneto-mechanical effect, but not true electronic MR. Indeed, some geometries of experiments could be doubted. However, a constructive development has been proposed by theory and carefully designed experiments. The theory predicted even higher magnetoresistance in the regime of conductance quantization through the magnetic nanocontact [7-10]. It seems that MR in conduction quantization regime has been observed in an experiment [11,12]. The work was supported by the RFBR grant No 03-02-17656. [1] N. Garcia, M. Munoz, and Y.-W. Zhao, Phys. Rev. Lett. 82, 2923 (1999). [2] G. Tatara, Y.-W. Zhao, M. Munoz, and N. Garcia, Phys. Rev. Lett. 83, 2030 (1999). [3] N. Garcia, M. Munoz, V.V. Osipov, et al., Journ. Magn. Magn. Mater. 240, 92-99 (2002). [4] L.R. Tagirov, B.P. Vodopyanov, K.B. Efetov, Phys. Rev. B 63, 104428 (2001). [5] H.D. Chopra, S.Z. Hua, Phys. Rev. B 66, 020403 (2002). [6] Hai Wang, H. Cheng, N. Garcia, cond-mat/0207516 (22 Jul 2002). [7] L.R. Tagirov, B.P. Vodopyanov, K.B. Efetov, Phys. Rev. B 65, 214419 (2002). [8] M.Ye. Zhuravlev, E.Y. Tsymbal, S.S. Jaswal et al., Appl. Phys. Lett. 83, 3534 (2003
Compactified webs and domain wall partition functions
Energy Technology Data Exchange (ETDEWEB)
Shabbir, Khurram [Government College University, Department of Mathematics, Lahore (Pakistan)
2017-04-15
In this paper we use the topological vertex formalism to calculate a generalization of the ''domain wall'' partition function of M-strings. This generalization allows calculation of partition function of certain compactified webs using a simple gluing algorithm similar to M-strings case. (orig.)
Charm physics with physical light and strange quarks using domain wall fermions
Boyle, Peter A; Garron, Nicolas; Khamseh, Ava; Marinkovic, Marina; Sanfilippo, Francesco; Tsang, Justus Tobias; Boyle, Peter A.
2015-01-01
We present a study of charm physics using RBC/UKQCD 2+1 flavour physical point domain wall fermion ensembles for the light quarks as well as for the valence charm quark. After a brief motivation of domain wall fermions as a suitable heavy quark discretisation we will show first results for masses and matrix elements.
Magnetoresistive logic and biochip
International Nuclear Information System (INIS)
Brueckl, Hubert; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke
2004-01-01
While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems
International Nuclear Information System (INIS)
Bernard, Denis; Le Doussal, Pierre; Middleton, A. Alan
2007-01-01
Domain walls for spin glasses are believed to be scale invariant; a stronger symmetry, conformal invariance, has the potential to hold. The statistics of zero-temperature Ising spin glass domain walls in two dimensions are used to test the hypothesis that these domain walls are described by a Schramm-Loewner evolution SLE κ . Multiple tests are consistent with SLE κ , where κ=2.32±0.08. Both conformal invariance and the domain Markov property are tested. The latter does not hold in small systems, but detailed numerical evidence suggests that it holds in the continuum limit
Primordial black hole and wormhole formation by domain walls
Energy Technology Data Exchange (ETDEWEB)
Deng, Heling; Garriga, Jaume; Vilenkin, Alexander, E-mail: heling.deng@tufts.edu, E-mail: garriga@cosmos.phy.tufts.edu, E-mail: vilenkin@cosmos.phy.tufts.edu [Institute of Cosmology, Tufts University, 574 Boston Ave, Medford, MA, 02155 (United States)
2017-04-01
In theories with a broken discrete symmetry, Hubble sized spherical domain walls may spontaneously nucleate during inflation. These objects are subsequently stretched by the inflationary expansion, resulting in a broad distribution of sizes. The fate of the walls after inflation depends on their radius. Walls smaller than a critical radius fall within the cosmological horizon early on and collapse due to their own tension, forming ordinary black holes. But if a wall is large enough, its repulsive gravitational field becomes dominant much before the wall can fall within the cosmological horizon. In this ''supercritical'' case, a wormhole throat develops, connecting the ambient exterior FRW universe with an interior baby universe, where the exponential growth of the wall radius takes place. The wormhole pinches off in a time-scale comparable to its light-crossing time, and black holes are formed at its two mouths. As discussed in previous work, the resulting black hole population has a wide distribution of masses and can have significant astrophysical effects. The mechanism of black hole formation has been previously studied for a dust-dominated universe. Here we investigate the case of a radiation-dominated universe, which is more relevant cosmologically, by using numerical simulations in order to find the initial mass of a black hole as a function of the wall size at the end of inflation. For large supercritical domain walls, this mass nearly saturates the upper bound according to which the black hole cannot be larger than the cosmological horizon. We also find that the subsequent accretion of radiation satisfies a scaling relation, resulting in a mass increase by about a factor of 2.
Influence of Joule heating on current-induced domain wall depinning
Energy Technology Data Exchange (ETDEWEB)
Moretti, Simone, E-mail: simone.moretti@usal.es; Raposo, Victor; Martinez, Eduardo [University of Salamanca, Plaza de los Caidos, 37008 Salamanca (Spain)
2016-06-07
The domain wall depinning from a notch in a Permalloy nanostrip on top of a SiO{sub 2}/Si substrate is studied theoretically under application of static magnetic fields and the injection of short current pulses. The influence of Joule heating on current-induced domain wall depinning is explored self-consistently by coupling the magnetization dynamics in the ferromagnetic strip to the heat transport throughout the system. Our results indicate that Joule heating plays a remarkable role in these processes, resulting in a reduction in the critical depinning field and/or in a temporary destruction of the ferromagnetic order for typically injected current pulses. In agreement with experimental observations, similar pinning-depinning phase diagrams can be deduced for both current polarities when the Joule heating is taken into account. These observations, which are incompatible with the sole contribution of spin transfer torques, provide a deeper understanding of the physics underlying these processes and establish the real scope of the spin transfer torque. They are also relevant for technological applications based on current-induced domain-wall motion along soft strips.
Simulations of super-structure domain walls in two dimensional assemblies of magnetic nanoparticles
DEFF Research Database (Denmark)
Jordanovic, Jelena; Beleggia, Marco; Schiøtz, Jakob
2015-01-01
We simulate the formation of domain walls in two-dimensional assemblies of magnetic nanoparticles. Particle parameters are chosen to match recent electron holography and Lorentz microscopy studies of almost monodisperse cobalt nanoparticles assembled into regular, elongated lattices. As the parti......We simulate the formation of domain walls in two-dimensional assemblies of magnetic nanoparticles. Particle parameters are chosen to match recent electron holography and Lorentz microscopy studies of almost monodisperse cobalt nanoparticles assembled into regular, elongated lattices...... taking the role of the atomic spins. The coupling is, however, different. The superspins interact only by dipolar interactions as exchange coupling between individual nanoparticles may be neglected due to interparticle spacing. We observe that it is energetically favorable to introduce domain walls...... oriented along the long dimension of nanoparticle assemblies rather than along the short dimension. This is unlike what is typically observed in continuous magnetic materials, where the exchange interaction introduces an energetic cost proportional to the area of the domain walls. Structural disorder...
Magnetoresistance effect in permalloy nanowires with various types of notches
Directory of Open Access Journals (Sweden)
Y. Gao
2018-05-01
Full Text Available Suppressing the stochastic domain wall (DW motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller change of resistance always corresponds to larger (smaller depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
Energy Technology Data Exchange (ETDEWEB)
Braden, Jonathan [CITA, University of Toronto,60 St. George Street, Toronto, ON, M5S 3H8 (Canada); Department of Physics, University of Toronto,60 St. George Street, Toronto, ON, M5S 3H8 (Canada); Department of Physics and Astronomy, University College London,Gower Street, London, WC1E 6BT (United Kingdom); Bond, J. Richard [CITA, University of Toronto,60 St. George Street, Toronto, ON, M5S 3H8 (Canada); Mersini-Houghton, Laura [Department of Physics and Astronomy, University of North Carolina-Chapel Hill,1 Phillips Hall, 120 E. Cameron Avenue, Chapel Hill, NC 27599-3255 (United States)
2015-08-26
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation.
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
Energy Technology Data Exchange (ETDEWEB)
Braden, Jonathan; Bond, J. Richard [CITA, University of Toronto, 60 St. George Street, Toronto, ON, M5S 3H8 (Canada); Mersini-Houghton, Laura, E-mail: j.braden@ucl.ac.uk, E-mail: bond@cita.utoronto.ca, E-mail: mersini@physics.unc.edu [Department of Physics and Astronomy, University of North Carolina-Chapel Hill, 1 Phillips Hall, 120 E. Cameron Avenue, Chapel Hill, NC 27599-3255 (United States)
2015-08-01
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation.
Cosmic bubble and domain wall instabilities II: fracturing of colliding walls
International Nuclear Information System (INIS)
Braden, Jonathan; Bond, J. Richard; Mersini-Houghton, Laura
2015-01-01
We study collisions between nearly planar domain walls including the effects of small initial nonplanar fluctuations. These perturbations represent the small fluctuations that must exist in a quantum treatment of the problem. In a previous paper, we demonstrated that at the linear level a subset of these fluctuations experience parametric amplification as a result of their coupling to the planar symmetric background. Here we study the full three-dimensional nonlinear dynamics using lattice simulations, including both the early time regime when the fluctuations are well described by linear perturbation theory as well as the subsequent stage of fully nonlinear evolution. We find that the nonplanar fluctuations have a dramatic effect on the overall evolution of the system. Specifically, once these fluctuations begin to interact nonlinearly the split into a planar symmetric part of the field and the nonplanar fluctuations loses its utility. At this point the colliding domain walls dissolve, with the endpoint of this being the creation of a population of oscillons in the collision region. The original (nearly) planar symmetry has been completely destroyed at this point and an accurate study of the system requires the full three-dimensional simulation
Jonkers, PAE
2002-01-01
The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,
Domain wall energy landscapes in amorphous magnetic films with asymmetric arrays of holes
International Nuclear Information System (INIS)
Alija, A; Perez-Junquera, A; RodrIguez-RodrIguez, G; Velez, M; Alameda, J M; MartIn, J I; Marconi, V I; Kolton, A B; Parrondo, J M R; Anguita, J V
2009-01-01
Arrays of asymmetric holes have been defined in amorphous Co-Si films by e-beam lithography in order to study domain wall motion across the array subject to the asymmetric pinning potential created by the holes. Experimental results on Kerr effect magnetooptical measurements and hysteresis loops are compared with micromagnetic simulations in films with arrays of triangular holes. These show that the potential asymmetry favours forward wall propagation for flat walls but, if the wall contains a kink, net backward wall propagation is preferred at low fields, in agreement with minor loop experiments. The difference between the fields needed for forward and backward flat wall propagation increases as the size of the triangular holes is reduced, becoming maximum for 1 μm triangles, which is the characteristic length scale set by domain wall width.
Domain wall energy landscapes in amorphous magnetic films with asymmetric arrays of holes
Alija, A.; Pérez-Junquera, A.; Rodríguez-Rodríguez, G.; Vélez, M.; Marconi, V. I.; Kolton, A. B.; Anguita, J. V.; Alameda, J. M.; Parrondo, J. M. R.; Martín, J. I.
2009-02-01
Arrays of asymmetric holes have been defined in amorphous Co-Si films by e-beam lithography in order to study domain wall motion across the array subject to the asymmetric pinning potential created by the holes. Experimental results on Kerr effect magnetooptical measurements and hysteresis loops are compared with micromagnetic simulations in films with arrays of triangular holes. These show that the potential asymmetry favours forward wall propagation for flat walls but, if the wall contains a kink, net backward wall propagation is preferred at low fields, in agreement with minor loop experiments. The difference between the fields needed for forward and backward flat wall propagation increases as the size of the triangular holes is reduced, becoming maximum for 1 µm triangles, which is the characteristic length scale set by domain wall width.
Controlled motion of domain walls in submicron amorphous wires
Energy Technology Data Exchange (ETDEWEB)
Ţibu, Mihai; Lostun, Mihaela; Rotărescu, Cristian; Atiţoaie, Alexandru; Lupu, Nicoleta; Óvári, Tibor-Adrian, E-mail: taovari@phys-iasi.ro; Chiriac, Horia [Department of Magnetic Materials and Devices, National Institute of Research and Development for Technical Physics, Iaşi, 700050 (Romania); Allwood, Dan A. [Department of Materials Science and Engineering, University of Sheffield, Sheffield, S1 3JD (United Kingdom)
2016-05-15
Results on the control of the domain wall displacement in cylindrical Fe{sub 77.5}Si{sub 7.5}B{sub 15} amorphous glass-coated submicron wires prepared by rapid quenching from the melt are reported. The control methods have relied on conical notches with various depths, up to a few tens of nm, made in the glass coating and in the metallic nucleus using a focused ion beam (FIB) system, and on the use of small nucleation coils at one of the sample ends in order to apply magnetic field pulses aimed to enhance the nucleation of reverse domains. The notch-based method is used for the first time in the case of cylindrical ultrathin wires. The results show that the most efficient technique of controlling the domain wall motion in this type of samples is the simultaneous use of notches and nucleation coils. Their effect depends on wire diameter, notch depth, its position on the wire length, and characteristics of the applied pulse.
N=1 domain wall solutions of massive type II supergravity as generalized geometries
International Nuclear Information System (INIS)
Louis, J.
2006-05-01
We study N=1 domain wall solutions of type IIB supergravity compactified on a Calabi-Yau manifold in the presence of RR and NS electric and magnetic fluxes. We show that the dynamics of the scalar fields along the direction transverse to the domain wall is described by gradient flow equations controlled by a superpotential W. We then provide a geometrical interpretation of the gradient flow equations in terms of the mirror symmetric compactification of type IIA. They correspond to a set of generalized Hitchin flow equations of a manifold with SU(3) x SU(3)structure which is fibered over the direction transverse to the domain wall. (Orig.)
Electrical conduction at domain walls in multiferroic BiFeO3
Seidel, Jan; Martin, Lane; He, Qing; Zhan, Qian; Chu, Ying-Hao; Rother, Axel; Hawkridge, Michael; Maksymovych, Peter; Yu, Pu; Gajek, Martin; Balke, Nina; Kalinin, Sergei; Gemming, Sybille; Wang, Feng; Catalán, Gustau; Scott, James; Spaldin, Nicola; Orenstein, Joseph; Ramesh, Ramamoorthy
2009-03-01
We report the observation of room temperature electronic conductivity at ferroelectric domain walls in BiFeO3. The origin and nature of the observed conductivity is probed using a combination of conductive atomic force microscopy, high resolution transmission electron microscopy and first-principles density functional computations. We show that a structurally driven change in both the electrostatic potential and local electronic structure (i.e., a decrease in band gap) at the domain wall leads to the observed electrical conductivity. We estimate the conductivity in the wall to be several orders of magnitude higher than for the bulk material. Additionally we demonstrate the potential for device applications of such conducting nanoscale features.
High-pressure oxygenation of thin-wall YBCO single-domain samples
International Nuclear Information System (INIS)
Chaud, X; Savchuk, Y; Sergienko, N; Prikhna, T; Diko, P
2008-01-01
The oxygen annealing of ReBCO bulk material, necessary to achieve superconducting properties, usually induces micro- and macro-cracks. This leads to a crack-assisted oxygenation process that allows oxygenating large bulk samples faster than single crystals. But excellent superconducting properties are cancelled by the poor mechanical ones. More progressive oxygenation strategy has been shown to reduce drastically the oxygenation cracks. The problem then arises to keep a reasonable annealing time. The concept of bulk Y123 single-domain samples with thin-wall geometry has been introduced to bypass the inherent limitation due to a slow oxygen diffusion rate. But it is not enough. The use of a high oxygen pressure (16 MPa) enables to speed up further the process. It introduces a displacement in the equilibrium phase diagram towards higher temperatures, i.e., higher diffusion rates, to achieve a given oxygen content in the material. Remarkable results were obtained by applying such a high pressure oxygen annealing process on thin-wall single-domain samples. The trapped field of 16 mm diameter Y123 thin-wall single-domain samples was doubled (0.6T vs 0.3T at 77K) using an annealing time twice shorter (about 3 days). The initial development was made on thin bars. The advantage of thin-wall geometry is that such an annealing can be applied directly to a much larger sample
Stress dependence of the domain wall potential in amorphous CoFeSiB glass-coated microwires
International Nuclear Information System (INIS)
Varga, R.; Zhukov, A.; Blanco, J.M.; Gonzalez, J.; Zhukova, V.; Vojtanik, P.
2006-01-01
We present a method to study the domain wall potential through the thermal activation of the domain wall across the energy barrier. Two contributions to the domain wall potential in amorphous microwires are recognized: magnetoelastic and relaxation. The role of each contribution is studied by measuring the switching field distribution at different frequencies and under applied stress
Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO3
International Nuclear Information System (INIS)
Nataf, Guillaume F.; Guennou, Mael; Haussmann, Alexander; Barrett, Nick; Kreisel, Jens
2016-01-01
The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Non-volatile polarization switch of magnetic domain wall velocity
Energy Technology Data Exchange (ETDEWEB)
Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)
2015-12-21
Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.
Novel Chiral Magnetic Domain Wall Structure in Fe/Ni/Cu(001) Films
Chen, G.; Zhu, J.; Quesada, A.; Li, J.; N'Diaye, A. T.; Huo, Y.; Ma, T. P.; Chen, Y.; Kwon, H. Y.; Won, C.; Qiu, Z. Q.; Schmid, A. K.; Wu, Y. Z.
2013-04-01
Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.
Directory of Open Access Journals (Sweden)
Yoshihisa eOda
2013-12-01
Full Text Available Patterning of the cellulosic cell wall underlies the shape and function of plant cells. The cortical microtubule array plays a central role in the regulation of cell wall patterns. However, the regulatory mechanisms by which secondary cell wall patterns are established through cortical microtubules remain to be fully determined. Our recent study in xylem vessel cells revealed that a mutual inhibitory interaction between cortical microtubules and distinct plasma membrane domains leads to distinctive patterning in secondary cell walls. Our research revealed that the recycling of active and inactive ROP proteins by a specific GAP and GEF pair establishes distinct de novo plasma membrane domains. Active ROP recruits a plant-specific microtubule-associated protein, MIDD1, which mediates the mutual interaction between cortical microtubules and plasma membrane domains. In this mini review, we summarize recent research regarding secondary wall patterning, with a focus on the emerging interplay between plasma membrane domains and cortical microtubules through MIDD1 and ROP.
Effects of biases in domain wall network evolution. II. Quantitative analysis
Correia, J. R. C. C. C.; Leite, I. S. C. R.; Martins, C. J. A. P.
2018-04-01
Domain walls form at phase transitions which break discrete symmetries. In a cosmological context, they often overclose the Universe (contrary to observational evidence), although one may prevent this by introducing biases or forcing anisotropic evolution of the walls. In a previous work [Correia et al., Phys. Rev. D 90, 023521 (2014), 10.1103/PhysRevD.90.023521], we numerically studied the evolution of various types of biased domain wall networks in the early Universe, confirming that anisotropic networks ultimately reach scaling while those with a biased potential or biased initial conditions decay. We also found that the analytic decay law obtained by Hindmarsh was in good agreement with simulations of biased potentials, but not of biased initial conditions, and suggested that the difference was related to the Gaussian approximation underlying the analytic law. Here, we extend our previous work in several ways. For the cases of biased potential and biased initial conditions, we study in detail the field distributions in the simulations, confirming that the validity (or not) of the Gaussian approximation is the key difference between the two cases. For anisotropic walls, we carry out a more extensive set of numerical simulations and compare them to the canonical velocity-dependent one-scale model for domain walls, finding that the model accurately predicts the linear scaling regime after isotropization. Overall, our analysis provides a quantitative description of the cosmological evolution of these networks.
International Nuclear Information System (INIS)
Samardak, Alexander; Sukovatitsina, Ekaterina; Ognev, Alexey; Stebliy, Maksim; Davydenko, Alexander; Chebotkevich, Ludmila; Keun Kim, Young; Nasirpouri, Forough; Janjan, Seyed-Mehdi; Nasirpouri, Farzad
2014-01-01
Magnetic states of nickel nanogranular films were studied in two distinct structures of individual and agglomerated granules electrodeposited on n-type Si(1 1 1) surface from a modified Watts bath at a low pH of 2. Magnetic force microscopy and micromagnetic simulations revealed three-dimensional out-of-plane magnetic vortex states in stand-alone hemispherical granules and their arrays, and multi-domain patterns in large agglomerates and integrated films. Once the granules coalesce into small chains or clusters, the coercivity values increased due to the reduction of inter-granular spacing and strengthening of the magnetostatic interaction. Further growth leads to the formation of a continuous granulated film which strongly affected the coercivity and remanence. This was characterized by the domain wall nucleation and propagation leading to a stripe domain pattern. Magnetoresistance measurements as a function of external magnetic field are indicative of anisotropic magnetoresistance (AMR) for the continuous films electrodeposited on Si substrate. - Highlights: • Magnetic states of electrodeposited nickel in isolated spherical and agglomerated nanogranules, and a continuous film. • Preferential magnetization reversal mechanism in isolated granules is vortex state. • Micromagnetic simulations confirm the three-dimensional vortex. • Transition between the vortex state and multi-domain magnetic pattern causes a significant decrease in the coercive force. • Continuous nickel films electrodeposited on silicon substrate exhibit AMR whose magnitude increases with the film thickness
Energy Technology Data Exchange (ETDEWEB)
Majidi, Roya, E-mail: royamajidi@gmail.com [Department of Physics, Shahid Rajaee Teacher Training University, Lavizan, 16788-15811 Tehran (Iran, Islamic Republic of)
2012-10-01
In the present work, we have compared the resistance of the 90 Degree-Sign , 180 Degree-Sign , and 360 Degree-Sign domain walls in the presence of external magnetic field. The calculations are based on the Boltzmann transport equation within the relaxation time approximation. One-dimensional Neel-type domain walls between two domains whose magnetization differs by angle of 90 Degree-Sign , 180 Degree-Sign , and 360 Degree-Sign are considered. The results indicate that the resistance of the 360 Degree-Sign DW is more considerable than that of the 90 Degree-Sign and 180 Degree-Sign DWs. It is also found that the domain wall resistance can be controlled by applying transverse magnetic field. Increasing the strength of the external magnetic field enhances the domain wall resistance. In providing spintronic devices based on magnetic nanomaterials, considering and controlling the effect of domain wall on resistivity are essential.
Edge states in gated bilayer-monolayer graphene ribbons and bilayer domain walls
Mirzakhani, M.; Zarenia, M.; Peeters, F. M.
2018-05-01
Using the effective continuum model, the electron energy spectrum of gated bilayer graphene with a step-like region of decoupled graphene layers at the edge of the sample is studied. Different types of coupled-decoupled interfaces are considered, i.e., zigzag (ZZ) and armchair junctions, which result in significant different propagating states. Two non-valley-polarized conducting edge states are observed for ZZ type, which are mainly located around the ZZ-ended graphene layers. Additionally, we investigated both BA-BA and BA-AB domain walls in the gated bilayer graphene within the continuum approximation. Unlike the BA-BA domain wall, which exhibits gapped insulating behaviour, the domain walls surrounded by different stackings of bilayer regions feature valley-polarized edge states. Our findings are consistent with other theoretical calculations, such as from the tight-binding model and first-principles calculations, and agree with experimental observations.
Field-driven sense elements for chirality-dependent domain wall detection and storage
Energy Technology Data Exchange (ETDEWEB)
Bowden, S. R. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Maryland Nanocenter, University of Maryland, College Park, Maryland 20742 (United States); Unguris, J. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2013-12-14
A method for locally sensing and storing data of transverse domain wall chirality in planar nanowire logic and memory systems is presented. Patterned elements, in close proximity to the nanowires, respond to the asymmetry in the stray field from the domain wall to produce a chirality-dependent response. When a bias field is applied, a stray field-assisted reversal of the element magnetization results in a reversed remanent state, measurable by scanning electron microscopy with polarization analysis (SEMPA). The elements are designed as triangles with tips pointing toward the nanowire, allowing the shape anisotropy to be dominated by the base but having a portion with lower volume and lower energy barrier closest to the domain wall. Micromagnetic modeling assists in the design of the nanowire-triangle systems and experiments using SEMPA confirm the importance of aspect ratio and spacing given a constant bias field magnitude.
Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.
Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B
2016-10-20
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.
DEFF Research Database (Denmark)
Mouritsen, Ole G.; Praestgaard, Eigil
1988-01-01
obeys dynamical scaling and the shape of the dynamical scaling function pertaining to the structure factor is found to depend on P. Specifically, this function is described by a Porod-law behavior, q-ω, where ω increases with the wall softness. The kinetic exponent, which describes how the linear domain...... infinite to zero temperature as well as to nonzero temperatures below the ordering transition. The continuous nature of the spin variables causes the domain walls to be ‘‘soft’’ and characterized by a finite thickness. The steady-state thickness of the walls can be varied by a model parameter, P. At zero...... size varies with time, R(t)∼tn, is for both models at zero temperature determined to be n≃0.25, independent of P. At finite temperatures, the growth kinetics is found to cross over to the Lifshitz-Allen-Cahn law characterized by n≃0.50. The results support the idea of two separate zero...
Domain wall propagation tuning in magnetic nanowires through geometric modulation
Energy Technology Data Exchange (ETDEWEB)
Arzuza, L.C.C., E-mail: luisarzuza179@gmail.com [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Universidad de la Costa, Departamento de Ciencias Naturales y Exactas, Calle 58 No. 55-66, Barranquilla (Colombia); López-Ruiz, R. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Salazar-Aravena, D. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Departamento de Física, Facultad de Ciencias, Universidad de Tarapacá, 1000007 Arica (Chile); Knobel, M. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil); Brazilian Nanotechnology National Laboratory, Centro Nacional de Pesquisa em Energia e Materiais (CNPEM), 13083-970 Campinas (SP) (Brazil); Béron, F.; Pirota, K.R. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas (SP) (Brazil)
2017-06-15
Highlights: • The modulated nanowires dynamics occurs through two reversal modes. • Modulated nanowires show a change in the χ in contrast to homogeneous ones. • The FORC method reveals a non-uniform stray field due to shape modulation. - Abstract: The magnetic behavior of nickel modulated nanowires embedded in porous alumina membranes is investigated. Their diameters exhibit a sharp transition between below (35 nm) and above (52 nm) the theoretical limit for transverse and vortex domain walls. Magnetic hysteresis loops and first-order reversal curves (FORCs) were measured on several ordered nanowire arrays with different wide-narrow segment lengths ratio and compared with those from homogenous nanowires. The experimental magnetic response evidences a rather complex susceptibility behavior for nanowires with modulated diameter. Micromagnetic simulations on isolated and first-neighbors arrays of nanowires show that the domain wall structure, which depends on the segment diameter, suffers a transformation while crossing the diameter modulation, but without any pinning. The experimental array magnetic behavior can be ascribed to a heterogeneous stray field induced by the diameter modulation, yielding a stronger interaction field at the wide extremity than at the narrow one. The results evidence the possibility to control the domain wall propagation and morphology by modulating the lateral aspect of the magnetic entity.
A micromagnetic study of the oscillations of pinned domain walls in magnetic ribbons
Energy Technology Data Exchange (ETDEWEB)
Alejos, Oscar [Dpto. Electricidad y Electronica, Universidad de Valladolid, 47071 Valladolid (Spain)]. E-mail: oscaral@ee.uva.es; Torres, Carlos [Dpto. Electricidad y Electronica, Universidad de Valladolid, 47071 Valladolid (Spain); Hernandez-Gomez, Pablo [Dpto. Electricidad y Electronica, Universidad de Valladolid, 47071 Valladolid (Spain); Lopez-Diaz, Luis [Dpto. Fisica Aplicada, Universidad de Salamanca, 37071 Salamanca (Spain); Torres, Luis [Dpto. Fisica Aplicada, Universidad de Salamanca, 37071 Salamanca (Spain); Martinez, Eduardo [Dpto. Ingenieria Electromecanica, Universidad de Burgos, 09001 Burgos (Spain)
2007-09-15
The work studies the dynamics of domain walls in magnetic ribbons with thicknesses of the order of magnitude of the permalloy exchange length (5.7 nm) by means of micromagnetic simulations. Two small defects are symmetrically placed on both edges of the ribbon, one on each edge, occupying the whole ribbon thickness. One transverse domain wall is pinned by the defects, in a head-to-head configuration. A free wall oscillation is forced by applying a static external magnetic field in the direction of the large axis until the wall reaches a new equilibrium position (elongation), and then removed. Three dynamic regimes are observed depending on the size of the cross ribbon section.
A micromagnetic study of the oscillations of pinned domain walls in magnetic ribbons
International Nuclear Information System (INIS)
Alejos, Oscar; Torres, Carlos; Hernandez-Gomez, Pablo; Lopez-Diaz, Luis; Torres, Luis; Martinez, Eduardo
2007-01-01
The work studies the dynamics of domain walls in magnetic ribbons with thicknesses of the order of magnitude of the permalloy exchange length (5.7 nm) by means of micromagnetic simulations. Two small defects are symmetrically placed on both edges of the ribbon, one on each edge, occupying the whole ribbon thickness. One transverse domain wall is pinned by the defects, in a head-to-head configuration. A free wall oscillation is forced by applying a static external magnetic field in the direction of the large axis until the wall reaches a new equilibrium position (elongation), and then removed. Three dynamic regimes are observed depending on the size of the cross ribbon section
Directory of Open Access Journals (Sweden)
Youhei Yamaji
2014-05-01
Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.
International Nuclear Information System (INIS)
Salkola, M.I.; Schrieffer, J.R.
1998-01-01
Nonequilibrium properties of short-coherence-length s-wave superconductors are analyzed in the presence of extrinsic and intrinsic inhomogeneities. In general, the lowest-energy configurations of quasiparticle excitations are topological textures into which quasiparticles segregate and that are described as antiphase domain walls between superconducting regions whose order parameter phases differ by π. Antiphase domain walls can be probed by various experimental techniques, for example, by optical absorption and NMR. At zero temperature, quasiparticles seldom appear as self-trapped bag states. However, for low concentrations of quasiparticles, they may be stabilized in superconductors by extrinsic defects. copyright 1998 The American Physical Society
Influence of exchange coupling on current-driven domain wall motion in a nanowire
International Nuclear Information System (INIS)
Komine, Takashi; Takahashi, Kota; Murakami, Hiroshi; Sugita, Ryuji
2010-01-01
In this study, the effect of exchange stiffness constant on current-driven domain wall motion in nanowires with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) has been investigated using micromagnetic simulation. The critical current density in a nanowire with IMA decreases as the exchange stiffness constant decreases because the domain wall width at the upper edge of the nanowire narrows according to the decrease of the exchange stiffness constant. On the other hand, the critical current density in a nanowire with PMA slightly decreases contrary to that of IMA although the domain wall width reasonably decreases as the exchange stiffness constant decreases. The slight reduction rate of the critical current density is due to the increase of the effective hard-axis anisotropy of PMA nanowire.
Performance of synthetic antiferromagnetic racetrack memory: domain wall versus skyrmion
International Nuclear Information System (INIS)
Tomasello, R; Puliafito, V; Martinez, E; Manchon, A; Ricci, M; Carpentieri, M; Finocchio, G
2017-01-01
A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study of the performance of synthetic antiferromagnetic (SAF) racetrack memory in terms of velocity and sensitivity to defects by using experimental parameters. We find that, to stabilize a SAF skyrmion, the Dzyaloshinskii–Moriya interaction in the top and the bottom ferromagnet should have an opposite sign. The velocity of SAF skyrmions and SAF Néel domain walls are of the same order and can reach values larger than 1200 m s −1 if a spin–orbit torque from the spin-Hall effect with opposite sign is applied to both ferromagnets. The presence of disordered anisotropy in the form of randomly distributed grains introduces a threshold current for both SAF skyrmions and SAF domain walls motions. (paper)
Performance of synthetic antiferromagnetic racetrack memory: domain wall versus skyrmion
Tomasello, R
2017-06-20
A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study of the performance of synthetic antiferromagnetic (SAF) racetrack memory in terms of velocity and sensitivity to defects by using experimental parameters. We find that, to stabilize a SAF skyrmion, the Dzyaloshinskii–Moriya interaction in the top and the bottom ferromagnet should have an opposite sign. The velocity of SAF skyrmions and SAF Néel domain walls are of the same order and can reach values larger than 1200 m s−1 if a spin–orbit torque from the spin-Hall effect with opposite sign is applied to both ferromagnets. The presence of disordered anisotropy in the form of randomly distributed grains introduces a threshold current for both SAF skyrmions and SAF domain walls motions.
Hidden Supersymmetry of Domain Walls and Cosmologies
International Nuclear Information System (INIS)
Skenderis, Kostas; Townsend, Paul K.
2006-01-01
We show that all domain-wall solutions of gravity coupled to scalar fields for which the world-volume geometry is Minkowski or anti-de Sitter admit Killing spinors, and satisfy corresponding first-order equations involving a superpotential determined by the solution. By analytic continuation, all flat or closed Friedmann-Lemaitre-Robertson-Walker cosmologies are shown to satisfy similar first-order equations arising from the existence of 'pseudo Killing' spinors
Matter antimatter domains: A possible solution to the CP domain wall problem in the early universe
Mohanty, A. K.; Stecker, F. W.
1984-01-01
An SU(5) grand unified theory model is used to show how the degeneracy between vacua with different spontaneously broken charge parity can be dynamically lifted by a condensate of heavy fermion pairs. This drives a phase transition to a unique vacuum state with definite charge parity. The transition eliminates the domain walls in a matter antimatter symmetric domain cosmology.
Domain Wall Motion in Magnetic Nanostrips under the Influence of Rashba Field
Directory of Open Access Journals (Sweden)
Vito Puliafito
2012-01-01
Full Text Available Spin-orbit Rashba effect applies a torque on the magnetization of a ferromagnetic nanostrip in the case of structural inversion asymmetry, also affecting the steady domain wall motion induced by a spin-polarized current. This influence is here analytically studied in the framework of the extended Landau-Lifshitz-Gilbert equation, including the Rashba effect as an additive term of the effective field. Results of previous micromagnetic simulations and experiments have shown that this field yields an increased value of the Walker breakdown current together with an enlargement of the domain wall width. In order to analytically describe these results, the standard travelling wave ansatz for the steady domain wall motion is here adopted. Results of our investigations reveal the impossibility to reproduce, at the same time, the previous features and suggest the need of a more sophisticated model whose development requires, in turn, additional information to be extracted from ad hoc micromagnetic simulations.
Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO{sub 3}
Energy Technology Data Exchange (ETDEWEB)
Nataf, Guillaume F. [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Guennou, Mael [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Haussmann, Alexander [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, George-Baehr-Str. 1, 01069, Dresden (Germany); Barrett, Nick [Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Kreisel, Jens [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422, Belvaux (Luxembourg)
2016-03-15
The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Discrete quark-lepton symmetry need not pose a cosmological domain wall problem
International Nuclear Information System (INIS)
Lew, H.; Volkas, R.R.
1992-01-01
Quarks and leptons may be related to each other through a spontaneously broken discrete symmetry. Models with acceptable and interesting collider phenomenology have been constructed which incorporate this idea. However, the standard Hot Big Bang model of cosmology is generally considered to eschew spontaneously broken discrete symmetries because they often lead to the formation of unacceptably massive domain walls. It is pointed out that there are a number of plausible quark-lepton symmetric models in nature which do not produce cosmologically troublesome domain walls. 30 refs
Energy Technology Data Exchange (ETDEWEB)
Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.
2017-01-01
The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.
Fermion condensation and gapped domain walls in topological orders
Energy Technology Data Exchange (ETDEWEB)
Wan, Yidun [Department of Physics and Center for Field Theory and Particle Physics, Fudan University,Shanghai 200433 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing University,Nanjing 210093 (China); Perimeter Institute for Theoretical Physics,Waterloo N2L 2Y5, Ontario (Canada); Wang, Chenjie [Perimeter Institute for Theoretical Physics,Waterloo N2L 2Y5, Ontario (Canada)
2017-03-31
We study fermion condensation in bosonic topological orders in two spatial dimensions. Fermion condensation may be realized as gapped domain walls between bosonic and fermionic topological orders, which may be thought of as real-space phase transitions from bosonic to fermionic topological orders. This picture generalizes the previous idea of understanding boson condensation as gapped domain walls between bosonic topological orders. While simple-current fermion condensation was considered before, we systematically study general fermion condensation and show that it obeys a Hierarchy Principle: a general fermion condensation can always be decomposed into a boson condensation followed by a minimal fermion condensation. The latter involves only a single self-fermion that is its own anti-particle and that has unit quantum dimension. We develop the rules of minimal fermion condensation, which together with the known rules of boson condensation, provides a full set of rules for general fermion condensation.
Transverse thermal magnetoresistance of potassium
International Nuclear Information System (INIS)
Newrock, R.S.; Maxfield, B.W.
1976-01-01
Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 9 0 K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH 2 , where both A and B are temperature-dependent coefficients. Results show that A = A 0 + A 1 T 3 , while B(T) cannot be expressed as any simple power law. A 0 is dependent on the RRR, while A 1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A 0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects
Search for domain wall dark matter with atomic clocks on board global positioning system satellites.
Roberts, Benjamin M; Blewitt, Geoffrey; Dailey, Conner; Murphy, Mac; Pospelov, Maxim; Rollings, Alex; Sherman, Jeff; Williams, Wyatt; Derevianko, Andrei
2017-10-30
Cosmological observations indicate that dark matter makes up 85% of all matter in the universe yet its microscopic composition remains a mystery. Dark matter could arise from ultralight quantum fields that form macroscopic objects. Here we use the global positioning system as a ~ 50,000 km aperture dark matter detector to search for such objects in the form of domain walls. Global positioning system navigation relies on precision timing signals furnished by atomic clocks. As the Earth moves through the galactic dark matter halo, interactions with domain walls could cause a sequence of atomic clock perturbations that propagate through the satellite constellation at galactic velocities ~ 300 km s -1 . Mining 16 years of archival data, we find no evidence for domain walls at our current sensitivity level. This improves the limits on certain quadratic scalar couplings of domain wall dark matter to standard model particles by several orders of magnitude.
Bang, Do; Yu, Jiawei; Qiu, Xuepeng; Wang, Yi; Awano, Hiroyuki; Manchon, Aurelien; Yang, Hyunsoo
2016-01-01
We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.
Bang, Do
2016-05-23
We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.
High-frequency domain wall excitations in magnetic garnet films with in-plane magnetization
International Nuclear Information System (INIS)
Synogach, V.T.; Doetsch, H.
1996-01-01
Magnetic garnet films of compositions (YBi) 3 Fe 5 O 12 and (LuBi) 3 Fe 5 O 12 are grown by liquid-phase epitaxy on [110]- and [100]-oriented substrates of gadolinium gallium garnet, respectively. All films have in-plane magnetization. 180 degree and 90 degree domain walls in these films are studied by microwave technique. In addition to the known low-frequency mode of wall translation new multiple resonant modes of both 90 degree and 180 degree domain walls with very small linewidth (4.2 MHz) are observed at frequencies near 1 GHz. Resonances are effectively excited by an rf magnetic field which is parallel or perpendicular to the wall plane. Resonance frequencies are shown to have nonlinear dispersion dependence on the mode number: they decrease with increasing in-plane magnetic field normal to the wall plane. copyright 1996 The American Physical Society
Energy Technology Data Exchange (ETDEWEB)
Toscano, D., E-mail: danilotoscano@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Leonel, S.A., E-mail: sidiney@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Coura, P.Z., E-mail: pablo@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Sato, F., E-mail: sjfsato@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Costa, B.V., E-mail: bvc@fisica.ufmg.br [Departamento de Física, Laboratório de Simulação, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123–970 (Brazil); Vázquez, M., E-mail: mvazquez@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC. 28049 Madrid (Spain)
2016-12-01
Numerical simulations have been used to investigate the polarity reversal of the transverse domain wall in rectangular magnetic nanowires and the stabilization of the domain wall position after occurring the polarity reversal. In order to control the wall position we have considered two clusters of magnetic impurities, identical and equidistant from the nanowire width axis. Traps of pinning and blocking for the transverse domain wall can be originated from magnetic impurities, consisting of a local variation of the exchange constant. Under suitable excitation amplitudes it is possible to switch the polarity of the transverse domain wall by applying a nanosecond axial magnetic field pulse in a fast and controllable way. - Highlights: • Traps for pinning and blocking transverse domain walls are proposed. • The traps consisting of localized modifications of the magnetic properties. • The wall polarity can be reversed in a fast and controllable way.
International Nuclear Information System (INIS)
Zhmetko, D.N.; Zhmetko, S.D.
2009-01-01
The damping of the motion of domain walls of a sandwich domain structure by the eddy currents magnetic fields, the stray fields and the hysteresis friction fields is investigated. The blocking of the motion of domain walls by the eddy currents magnetic fields is discovered.
Internal friction due to domain-wall motion in martensitically transformed A15 compounds
International Nuclear Information System (INIS)
Snead, C.L. Jr.; Welch, D.O.
1985-01-01
A lattice instability in A15 materials in some cases leads to a cubic-to-tetragonal martensitic transformation at low temperatures. The transformed material orients in lamellae with c axes alternately aligned along the directions producing domain walls between the lamellae. An internal-friction (delta) feature below T/sub m/ is attributed to stress-induced domain-wall motion. The magnitude of the friction increases as temperature is lowered below T/sub m/ as (1-c/a) increases, and behaves as (1-c/a) 2 from T/sub m/ down to the superconducting critical temperature where the increasing tetragonality is inhibited. The effect of strain in the lattice is to decrease the domain-wall internal friction, but not affect T/sub m/. Neutron-induced disorder and the addition of some third-elements in alloying decrease both delta and T/sub m/, with some elements reducing only the former. Less than 1 at. % H is seen to completely suppress both delta and T/sub m. Martensitically transformed V 2 Zr demonstrates low-temperature internal-friction and modulus behavior consists with easy β/m wall motion relative to the easy m/m motion of the A15's. For the V 2 Zr, a peak in delta is observed, qualitatively in agreement with expected β/m wall motion
SUSY QM from three domain walls in a scalar potential
Energy Technology Data Exchange (ETDEWEB)
Rodrigues, R. de Lima; Lima, A.F. de [Universidade Federal de Campina Grande (UFCG), Campina Grande, PB (Brazil). Centro de Tecnologia. Unidade Academica de Fisica]. E-mail: aerlima@df.ufcg.edu.br; Bezerra de Mello, E.R.; Bezerra, V.B. [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Dept. de Fisica]. E-mails: emello@fisica.ufpb.br; valdir@fisica.ufpb.br
2007-07-01
We investigate the linear classical stability of Bogomol'nyi-Prasad-Sommerfield (BPS) on three domain wall solutions in a system of three coupled real scalar fields, for a general positive potential with a square form. From a field theoretic superpotential evaluated on the domain states, the connection between the supersymmetric quantum mechanics involving three-component eigenfunctions and the stability equation associated with three classical configurations is elaborated. (author)
Energy Technology Data Exchange (ETDEWEB)
Perriot, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires. Service de physique du solide et de resonnance magnetique
1967-01-01
We report the study of the electrical resistance of a niobium single crystal, at 4.2 deg. K, from the beginning of the superconductive transition to 80 kilo oersteds. Critical fieldsH{sub c2} and H{sub c3} have been determined. Influences on superconductive transition of current density, field-current angle, crystal orientation and magnetoresistance have been studied. Variation laws of low-field transverse and longitudinal magneto-resistances have been determined. (author) [French] La variation de la resistance electrique d'un monocristal cylindrique de niobium a ete etudiee, a 4,2 deg. K, depuis le debut de la transition supraconductrice jusqu'a 80 kilooersteds. Les champs critiques H{sub c2} et H{sub c3} ont ete determines. On a etudie l'influence de la densite de courant, de l'angle champ-courant, de l'anisotropie cristalline et de la magnetoresistance sur la transition supraconductrice. Les lois de variation des magnetoresistances transversale et longitudinale ont ete determinees dans le domaine des champs faibles. (auteur)
Energy Technology Data Exchange (ETDEWEB)
Sánchez-Tejerina, L. [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Alejos, Ó., E-mail: oscaral@ee.uva.es [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Martínez, E. [Dpto. Física Aplicada, Facultad de Ciencias, Universidad de Salamanca, 37011 Salamanca (Spain); Muñoz, J.M. [Dpto. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain)
2016-07-01
The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii–Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current. - Highlights: • The asymmetric response of domain walls in bilayer strips with PMA is studied. • Out-of-plane fields and SHE longitudinal currents are applied. • The response is associated to the rotation of the domain wall inner magnetization. • Clockwise and counter-clockwise magnetization rotations are not equivalent. • The asymmetry results in different travelled distances and/or terminal speeds.
International Nuclear Information System (INIS)
Sánchez-Tejerina, L.; Alejos, Ó.; Martínez, E.; Muñoz, J.M.
2016-01-01
The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii–Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current. - Highlights: • The asymmetric response of domain walls in bilayer strips with PMA is studied. • Out-of-plane fields and SHE longitudinal currents are applied. • The response is associated to the rotation of the domain wall inner magnetization. • Clockwise and counter-clockwise magnetization rotations are not equivalent. • The asymmetry results in different travelled distances and/or terminal speeds.
Energy Technology Data Exchange (ETDEWEB)
Bukharov, A A; Ovchinnikov, A S; Baranov, N V [Department of Physics, Ural State University, Ekaterinburg, 620083 (Russian Federation); Inoue, K [Institute for Advanced Materials Research, Hiroshima University, Hiroshima (Japan)
2010-11-03
Using Monte Carlo simulations we investigate magnetic hysteresis in two- and three-dimensional systems of weakly antiferromagnetically coupled spin chains based on a scenario of domain wall (kink) motion within the chains. By adapting the model of walkers to simulate the domain wall dynamics and using the Ising-like dipole-dipole model, we study the effects of interchain coupling, temperature and anisotropy axis direction on hysteresis curves.
Magnetoresistance in cobalt-contacted multi-wall carbon nanotubes
International Nuclear Information System (INIS)
Vinzelberg, H.; Zhao, B.; Moench, I.; Schumann, J.; Schneider, C.M.
2005-01-01
We present results for magnetotransport measurements on multiwall-carbon nanotubes (MWCNT) contacted by cobalt electrodes. By measuring the V(I) characteristics at constant magnetic fields and different orientation of the magnetization directions in the Co electrodes, we were able to determine both current and voltage dependences of the magnetoresistance (MR) effects. These tunneling MR values are compared with the directly measured MR at constant current with sweeping magnetic field. The V(I) curves show an ohmic behavior at 295 K and a non-linear tunneling behavior at 4.2 K. With decreasing bias current the MR increased up to 60% at 4.2 K, and with decreasing bias voltages even up to 175%. The MR disappears at high bias current (voltages) and temperatures higher than 40 K. For most of the samples the current dependences of the MR were found to be nearly symmetric upon reversing the current direction. However, in some cases we also observed a sign change of the MR as function of the applied current, which suggests an inversion of the spin polarization in one of the Co interfaces
Segmental front line dynamics of randomly pinned ferroelastic domain walls
Puchberger, S.; Soprunyuk, V.; Schranz, W.; Carpenter, M. A.
2018-01-01
Dynamic mechanical analysis (DMA) measurements as a function of temperature, frequency, and dynamic force amplitude are used to perform a detailed study of the domain wall motion in LaAlO3. In previous DMA measurements Harrison et al. [Phys. Rev. B 69, 144101 (2004), 10.1103/PhysRevB.69.144101] found evidence for dynamic phase transitions of ferroelastic domain walls in LaAlO3. In the present work we focus on the creep-to-relaxation region of domain wall motion using two complementary methods. We determine, in addition to dynamic susceptibility data, waiting time distributions of strain jerks during slowly increasing stress. These strain jerks, which result from self-similar avalanches close to the depinning threshold, follow a power-law behavior with an energy exponent ɛ =1.7 ±0.1 . Also, the distribution of waiting times between events follows a power law N (tw) ∝tw-(n +1 ) with an exponent n =0.9 , which transforms to a power law of susceptibility S (ω ) ∝ω-n . The present dynamic susceptibility data can be well fitted with a power law, with the same exponent (n =0.9 ) up to a characteristic frequency ω ≈ω* , where a crossover from stochastic DW motion to the pinned regime is well described using the scaling function of Fedorenko et al. [Phys. Rev. B 70, 224104 (2004), 10.1103/PhysRevB.70.224104].
Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.
Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya
2016-09-09
We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.
Analysis of ultra-narrow ferromagnetic domain walls
Energy Technology Data Exchange (ETDEWEB)
Jenkins, Catherine; Paul, David
2012-01-10
New materials with high magnetic anisotropy will have domains separated by ultra-narrow ferromagnetic walls with widths on the order of a few unit cells, approaching the limit where the elastic continuum approximation often used in micromagnetic simulations is accurate. The limits of this approximation are explored, and the static and dynamic interactions with intrinsic crystalline defects and external driving elds are modeled. The results developed here will be important when considering the stability of ultra-high-density storage media.
Logic and memory concepts for all-magnetic computing based on transverse domain walls
International Nuclear Information System (INIS)
Vandermeulen, J; Van de Wiele, B; Dupré, L; Van Waeyenberge, B
2015-01-01
We introduce a non-volatile digital logic and memory concept in which the binary data is stored in the transverse magnetic domain walls present in in-plane magnetized nanowires with sufficiently small cross sectional dimensions. We assign the digital bit to the two possible orientations of the transverse domain wall. Numerical proofs-of-concept are presented for a NOT-, AND- and OR-gate, a FAN-out as well as a reading and writing device. Contrary to the chirality based vortex domain wall logic gates introduced in Omari and Hayward (2014 Phys. Rev. Appl. 2 044001), the presented concepts remain applicable when miniaturized and are driven by electrical currents, making the technology compatible with the in-plane racetrack memory concept. The individual devices can be easily combined to logic networks working with clock speeds that scale linearly with decreasing design dimensions. This opens opportunities to an all-magnetic computing technology where the digital data is stored and processed under the same magnetic representation. (paper)
International Nuclear Information System (INIS)
Martinez, Eduardo
2012-01-01
The domain wall dynamics along thin ferromagnetic strips with high perpendicular magnetocrystalline anisotropy driven by either magnetic fields or spin-polarized currents is theoretically analyzed by means of full micromagnetic simulations and a one-dimensional model, including both surface roughness and thermal effects. At finite temperature, the results show a field dependence of the domain wall velocity in good qualitative agreement with available experimental measurements, indicating a low field, low velocity creep regime, and a high field, linear regime separated by a smeared depinning region. Similar behaviors were also observed under applied currents. In the low current creep regime the velocity-current characteristic does not depend significantly on the non-adiabaticity. At high currents, where the domain wall velocity becomes insensitive to surface pinning, the domain wall shows a precessional behavior even when the non-adiabatic parameter is equal to the Gilbert damping. These analyses confirm the relevance of both thermal fluctuations and surface roughness for the domain wall dynamics, and that complete micromagnetic modeling and one-dimensional studies taking into account these effects are required to interpret the experimental measurements in order to get a better understanding of the origin, the role and the magnitude of the non-adiabaticity. (paper)
International Nuclear Information System (INIS)
Zahnd, G.; Pham, V.T.; Marty, A.; Jamet, M.; Beigné, C.; Notin, L.; Vergnaud, C.; Rortais, F.; Vila, L.; Attané, J.-P.
2016-01-01
We study domain wall injection in 100 nm wide NiFe nanowires, followed by domain wall propagation and pinning on 50 nm wide constrictions. The injection is performed using local and external magnetic fields. Using several nucleation pad geometries, we show that at these small dimensions the use of an external field only does not allow obtaining a reproducible injection/pinning process. However, the use of an additional local field, created by an Oersted line, allows to nucleate a reversed domain at zero external applied field. Then, an external field of 5 mT enables the domain wall to propagate far from the Oersted line, and the pinning occurs reproducibly. We also show that notwithstanding the reproducibility of the pinning process, the depinning field is found to be stochastic, following a bimodal distribution. Using micromagnetic simulation we link two different DW configurations, vortex and transverse, to the two typical depinning fields. - Highlights: • Magnetic domain wall introduction and pinning in Permalloy nanowires with 50 nm wide constrictions. • Magnetic domain nucleation at zero external applied field. • Bimodal distribution of the domain wall configuration in the constriction.
Control of domain wall pinning by localised focused Ga + ion irradiation on Au capped NiFe nanowires
International Nuclear Information System (INIS)
Burn, D. M.; Atkinson, D.
2014-01-01
Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.
On domain wall boundary conditions for the XXZ spin Hamiltonian
DEFF Research Database (Denmark)
Orlando, Domenico; Reffert, Susanne; Reshetikhin, Nicolai
In this note, we derive the spectrum of the infinite quantum XXZ spin chain with domain wall boundary conditions. The eigenstates are constructed as limits of Bethe states for the finite XXZ spin chain with quantum sl(2) invariant boundary conditions....
Localization and chiral symmetry in 2+1 flavor domain wall QCD
Energy Technology Data Exchange (ETDEWEB)
David J. Antonio; Kenneth C. Bowler; Peter A. Boyle; Norman H. Christ; Michael A. Clark; Saul D. Cohen; Chris Dawson; Alistair Hart; Balint Joó; Chulwoo Jung; Richard D. Kenway; Shu Li; Meifeng Lin; Robert D. Mawhinney; Christopher M. Maynard; Shigemi Ohta; Robert J. Tweedie; Azusa Yamaguchi
2008-01-01
We present results for the dependence of the residual mass of domain wall fermions (DWF) on the size of the fifth dimension and its relation to the density and localization properties of low-lying eigenvectors of the corresponding hermitian Wilson Dirac operator relevant to simulations of 2+1 flavor domain wall QCD. Using the DBW2 and Iwasaki gauge actions, we generate ensembles of configurations with a $16^3\\times 32$ space-time volume and an extent of 8 in the fifth dimension for the sea quarks. We demonstrate the existence of a regime where the degree of locality, the size of chiral symmetry breaking and the rate of topology change can be acceptable for inverse lattice spacings $a^{-1} \\ge 1.6$ GeV.
Reconfigurable magnonic crystal consisting of periodically distributed domain walls in a nanostrip
International Nuclear Information System (INIS)
Li, Zhi-xiong; Wang, Xi-guang; Wang, Dao-wei; Nie, Yao-zhuang; Tang, Wei; Guo, Guang-hua
2015-01-01
We study spin wave propagation in a new type of magnonic crystal consisting of a series of periodically distributed magnetic domain walls in a nanostrip by micromagnetic simulation. Spin wave bands and bandgaps are observed in frequency spectra and dispersion curves. Some bandgaps are caused by the Bragg reflection of the spin wave modes at the Brillouin zone boundaries, while others originate from the coupling between different incident and reflected spin wave modes. The control of the spin wave band structure by changing the magnetocrystalline anisotropy or applying an external magnetic field is studied. Increasing the magnetocrystalline anisotropy leads to an increase of the bandgaps. The external field applied perpendicular to the nanostrip gives rise to a doubling of the domain-wall magnonic crystal period. As a result, more bandgaps appear on the frequency spectra of propagating spin waves. The results presented here may find their use in the design of reconfigurable magnonic devices. - Highlights: • A reconfigurable magnonic crystal consisting of domain walls in a uniform nanostrip is proposed. • Propagating characteristics of spin waves in such magnonic crystal are studied. • Spin-wave band structures can be effectively manipulated by magnetic anisotropy or magnetic field
Black holes escaping from domain walls
International Nuclear Information System (INIS)
Flachi, Antonino; Sasaki, Misao; Pujolas, Oriol; Tanaka, Takahiro
2006-01-01
Previous studies concerning the interaction of branes and black holes suggested that a small black hole intersecting a brane may escape via a mechanism of reconnection. Here we consider this problem by studying the interaction of a small black hole and a domain wall composed of a scalar field and simulate the evolution of this system when the black hole acquires an initial recoil velocity. We test and confirm previous results, however, unlike the cases previously studied, in the more general set-up considered here, we are able to follow the evolution of the system also during the separation, and completely illustrate how the escape of the black hole takes place
George, P. K.; Oeffinger, T. R.; Chen, T. T.
1976-01-01
Experiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.
Fast Magnetoresistive Random-Access Memory
Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.
1991-01-01
Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.
Anomalous magnetoresistance in amorphous metals
International Nuclear Information System (INIS)
Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.
1984-01-01
The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations
Gravitational field of spherical domain wall in higher dimension
Indian Academy of Sciences (India)
and examine whether bound orbits are possible or not. This study will be of relevance to the structure formation because it gives some idea about the behaviour of the particles. (created at the early universe) in the gravitational field of the domain walls. Our paper is organized as follows: The basic equations are constructed ...
Accurate calibration of the velocity-dependent one-scale model for domain walls
International Nuclear Information System (INIS)
Leite, A.M.M.; Martins, C.J.A.P.; Shellard, E.P.S.
2013-01-01
We study the asymptotic scaling properties of standard domain wall networks in several cosmological epochs. We carry out the largest field theory simulations achieved to date, with simulation boxes of size 2048 3 , and confirm that a scale-invariant evolution of the network is indeed the attractor solution. The simulations are also used to obtain an accurate calibration for the velocity-dependent one-scale model for domain walls: we numerically determine the two free model parameters to have the values c w =0.34±0.16 and k w =0.98±0.07, which are of higher precision than (but in agreement with) earlier estimates.
Accurate calibration of the velocity-dependent one-scale model for domain walls
Energy Technology Data Exchange (ETDEWEB)
Leite, A.M.M., E-mail: up080322016@alunos.fc.up.pt [Centro de Astrofisica, Universidade do Porto, Rua das Estrelas, 4150-762 Porto (Portugal); Ecole Polytechnique, 91128 Palaiseau Cedex (France); Martins, C.J.A.P., E-mail: Carlos.Martins@astro.up.pt [Centro de Astrofisica, Universidade do Porto, Rua das Estrelas, 4150-762 Porto (Portugal); Shellard, E.P.S., E-mail: E.P.S.Shellard@damtp.cam.ac.uk [Department of Applied Mathematics and Theoretical Physics, Centre for Mathematical Sciences, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom)
2013-01-08
We study the asymptotic scaling properties of standard domain wall networks in several cosmological epochs. We carry out the largest field theory simulations achieved to date, with simulation boxes of size 2048{sup 3}, and confirm that a scale-invariant evolution of the network is indeed the attractor solution. The simulations are also used to obtain an accurate calibration for the velocity-dependent one-scale model for domain walls: we numerically determine the two free model parameters to have the values c{sub w}=0.34{+-}0.16 and k{sub w}=0.98{+-}0.07, which are of higher precision than (but in agreement with) earlier estimates.
Badea, Robert; Berezovsky, Jesse
2016-06-01
The propagation of domain walls in a ferromagnetic film is largely determined by domain-wall pinning at defects in the material. In this article, we map the effective potential landscape for domain-wall pinning in permalloy films by raster scanning a single ferromagnetic vortex and monitoring the hysteretic vortex displacement vs applied magnetic field. The measurement is carried out using a differential magneto-optical microscopy technique which yields spatial sensitivity of approximately 10 nm. We present a simple algorithm for extracting an effective pinning potential from the measurement of vortex displacement vs applied field. The resulting maps of the pinning potential reveal distinct types of pinning sites, which we attribute to quasi-zero-, one-, and two-dimensional defects in the permalloy film.
Giant magnetoresistance through a single molecule.
Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf
2011-03-01
Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.
Breaking of chiral symmetry in vortex domain wall propagation in ferromagnetic nanotubes
International Nuclear Information System (INIS)
Otálora, J.A.; López-López, J.A.; Landeros, P.; Vargas, P.; Núñez, A.S.
2013-01-01
This paper is focused to the field-induced dynamics of vortex-like domain walls (VDWs) in magnetic nanotubes (MNTs). Based on a dissipative Lagrangian formalism that fully includes damping as well as exchange and dipole–dipole coupling, it is shown that VDW motion is very sensitive to the chirality, giving rise to a chiral asymmetry in the vortex wall propagation. As a consequence, the dynamics of the wall is fundamentally different to that of nanostripes and solid nanowires. Besides the well-known Walker breakdown that stands at the onset of the precessional wall motion, it is found an additional breakdown field (called here the chiral breakdown) that modifies the steady regime of VDWs. We also show outstanding VDWs dynamical properties at low applied fields, as low-field mobilities (∼10km/(sT)) and very short relaxation times (∼1ns), offering a reliable fast control of VDWs velocities (∼1000m/s at applied fields of 0.7 mT). - Highlights: • We model analytically the dynamics of vortex domain walls in magnetic nanotubes. • We fully include damping, exchange and dipole–dipole coupling. • The wall dynamics is fundamentally different to that of nanostripes. • We report and describe an extra dynamical instability, the Chiral Breakdown field. • We report outstanding dynamical properties at weak magnetic fields
Breaking of chiral symmetry in vortex domain wall propagation in ferromagnetic nanotubes
Energy Technology Data Exchange (ETDEWEB)
Otálora, J.A., E-mail: jorge.otalora@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso (Chile); López-López, J.A.; Landeros, P.; Vargas, P. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, Valparaíso (Chile); Núñez, A.S. [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Santiago (Chile)
2013-09-15
This paper is focused to the field-induced dynamics of vortex-like domain walls (VDWs) in magnetic nanotubes (MNTs). Based on a dissipative Lagrangian formalism that fully includes damping as well as exchange and dipole–dipole coupling, it is shown that VDW motion is very sensitive to the chirality, giving rise to a chiral asymmetry in the vortex wall propagation. As a consequence, the dynamics of the wall is fundamentally different to that of nanostripes and solid nanowires. Besides the well-known Walker breakdown that stands at the onset of the precessional wall motion, it is found an additional breakdown field (called here the chiral breakdown) that modifies the steady regime of VDWs. We also show outstanding VDWs dynamical properties at low applied fields, as low-field mobilities (∼10km/(sT)) and very short relaxation times (∼1ns), offering a reliable fast control of VDWs velocities (∼1000m/s at applied fields of 0.7 mT). - Highlights: • We model analytically the dynamics of vortex domain walls in magnetic nanotubes. • We fully include damping, exchange and dipole–dipole coupling. • The wall dynamics is fundamentally different to that of nanostripes. • We report and describe an extra dynamical instability, the Chiral Breakdown field. • We report outstanding dynamical properties at weak magnetic fields.
Magnetic domain-wall tilting due to domain-wall speed asymmetry
Kim, Dae-Yun; Park, Min-Ho; Park, Yong-Keun; Kim, Joo-Sung; Nam, Yoon-Seok; Hwang, Hyun-Seok; Kim, Duck-Ho; Je, Soong-Geun; Min, Byoung-Chul; Choe, Sug-Bong
2018-04-01
Broken symmetries in diverse systems generate a number of intriguing phenomena and the analysis on such broken symmetries often provides decisive clues for exploring underlying physics in the systems. Recently, in magnetic thin-film systems, the Dzyaloshinskii-Moriya interaction (DMI)—induced by the broken symmetry of structural inversion—accounts for various chiral phenomena, which are of timely issues in spintronics. Here, we report an experimental observation on unexpected tilting of magnetic domain walls (DWs) due to the broken symmetry under the application of the magnetic field transverse to the magnetic wire systems. It has been predicted that the DMI possibly causes such DW tilting in the direction of the energy minimization. However, very interestingly, experimental observation reveals that the DW tilting does not follow the prediction based on the energy minimization, even for the tilting direction. Instead, the DW tilting is governed by the DW speed asymmetry that is initiated by the DW pinning at wire edges. A simple analytic model is proposed in consideration of the DW speed asymmetry at wire edges, which successfully explains the experimental observation of the DW tilting directions and angles, as confirmed by numerical simulation. The present study manifests the decisive role of the DW pinning with the DW speed asymmetry, which determines the DW configuration and consequently, the dynamics.
Vacuum tension effects on the evolution of domain walls in the early universe
International Nuclear Information System (INIS)
Aurilia, A.
1984-06-01
The ''vacuum pressure'' mechanism of the hadronic bag model is taken as a guide to formulate the dynamics of closed domain walls in the cosmological case. The effective action functional suggested by this analogy is a straightforward generalization of the Einstein-Maxwell action: it involves a 3-index antisymmetric potential whose coupling to matter generates two effective cosmological constants, one inside and one outside the domain wall. It is suggested that this mechanism, which is alternative to the introduction of a Higgs potential, is the source of the bubble nucleation process envisaged in the New Inflationary Cosmology. The dynamics of a spherical domain in a de Sitter phase is analyzed and is consistent with the geometrical formulation of shell dynamics proposed long ago by Israel. (author)
Griggio, F; Jesse, S; Kumar, A; Ovchinnikov, O; Kim, H; Jackson, T N; Damjanovic, D; Kalinin, S V; Trolier-McKinstry, S
2012-04-13
The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots.
Domain Walls and Textured Vortices in a Two-Component Ginzburg-Landau Model
DEFF Research Database (Denmark)
Madsen, Søren Peder; Gaididei, Yu. B.; Christiansen, Peter Leth
2005-01-01
coupling between the two order parameters a ''textured vortex'' is found by analytical and numerical solution of the Ginzburg-Landau equations. With a Josephson type coupling between the two order parameters we find the system to split up in two domains separated by a domain wall, where the order parameter...... is depressed to zero....
Martin, J. I.; Alija, A.; Sobrado, I.; Perez-Junquera, A.; Rodriguez-Rodriguez, G.; Velez, M.; Alameda, J. M.; Marconi, V. I.; Kolton, A. B.; Parrondo, J. M. R.
2009-03-01
The driven motion of domain walls in extended magnetic films patterned with 2D arrays of asymmetric holes has been found to be subject to two different crossed ratchet effects [1] which results in an inversion of the sign of domain wall motion rectification as a function of the applied magnetic field. This effect can be understood in terms of the competition between drive, elasticity and asymmetric pinning as revealed by a simple 4̂-model. In order to optimize the asymmetric hole design, the relevant energy landscapes for domain wall motion across the array of asymmetric holes have been calculated by micromagnetic simulations as a function of array geometrical characteristics. The effects of a transverse magnetic field on these two crossed ratchet effects will also be discussed in terms of the decrease in domain wall energy per unit area and of the modifications in the magnetostatic barriers for domain wall pinning at the asymmetric inclusions. Work supported by Spanish MICINN.[1] A. Perez-Junquera et al, Phys. Rev. Lett. 100 (2008) 037203
End States, Ladder Compounds, and Domain-Wall Fermions
International Nuclear Information System (INIS)
Creutz, M.
1999-01-01
A magnetic field applied to a cross-linked ladder compound can generate isolated electronic states bound to the ends of the chain. After exploring the interference phenomena responsible, I discuss a connection to the domain-wall approach to chiral fermions in lattice gauge theory. The robust nature of the states under small variations of the bond strengths is tied to chiral symmetry and the multiplicative renormalization of fermion masses. copyright 1999 The American Physical Society
Avoiding domain wall problem in SU(N) grand unified theories
International Nuclear Information System (INIS)
Fujimoto, Y.; Zhiyong, Z.
1982-08-01
We look for the possibility of embedding the discrete sub-group of U(1)-Pecci-Quinn symmetry into the continuous one to avoid the domain wall problem. We find, within some restricted context, among various SU(N) models only one-family SU(5) and SU(6). (author)
Samaraweera, R L; Liu, H-C; Wang, Z; Reichl, C; Wegscheider, W; Mani, R G
2017-07-11
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . The results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.
Energy Technology Data Exchange (ETDEWEB)
Ding, Song [College of Electrical Engineering and Control Science, Nanjing Tech University, Nanjing, Jiangsu 211816 (China); School of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 210016 (China); Tian, GuiYun, E-mail: tian280@hotmail.com [School of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 210016 (China); School of Electrical and Electronic Engineering, Merz Court, University of Newcastle upon Tyne, Newcastle NE1 7RU (United Kingdom); Dobmann, Gerd; Wang, Ping [School of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 210016 (China)
2017-01-01
Skewness of Magnetic Barkhausen Noise (MBN) signal is used as a new feature for applied stress determination. After experimental studies, skewness presents its ability for measuring applied tensile stress compared with conventional feature, meanwhile, a non-linear behavior of this new feature and an independence of the excitation conditions under compressive stress are found and discussed. Effective damping during domain wall motion influencing the asymmetric shape of the MBN statistical distribution function is discussed under compressive and tensile stress variation. Domain wall (DW) energy and distance between pinning edges of the DW are considered altering the characteristic relaxation time, which is the reason for the non-linear phenomenon of skewness. - Highlights: • The skewness of magnetic Barkhausen noise profile is proposed as a new feature for applied stress determination. • The skewness is sensitive to applied stress and independent to excitation frequency. • Domain wall energy and pinning distance influence the relaxation time of domain wall, which leads to a non-linear behavior of skewness under compressive stress.
Domain walls of gauged supergravity, M-branes and algebraic curves
Bakas, I.; Sfetsos, K.
1999-01-01
We provide an algebraic classification of all supersymmetric domain wall solutions of maximal gauged supergravity in four and seven dimensions, in the presence of non-trivial scalar fields in the coset SL(8,R)/SO(8) and SL(5,R)/SO(5) respectively. These solutions satisfy first-order equations, which can be obtained using the method of Bogomol'nyi. From an eleven-dimensional point of view they correspond to various continuous distributions of M2- and M5-branes. The Christoffel-Schwarz transformation and the uniformization of the associated algebraic curves are used in order to determine the Schrodinger potential for the scalar and graviton fluctuations on the corresponding backgrounds. In many cases we explicitly solve the Schrodinger problem by employing techniques of supersymmetric quantum mechanics. The analysis is parallel to the construction of domain walls of five-dimensional gauged supergravity, with scalar fields in the coset SL(6,R)/SO(6), using algebraic curves or continuous distributions of D3-brane...
Energy Technology Data Exchange (ETDEWEB)
Xu, Qingping; Mengin-Lecreulx, Dominique; Liu, Xueqian W.; Patin, Delphine; Farr, Carol L.; Grant, Joanna C.; Chiu, Hsiu-Ju; Jaroszewski, Lukasz; Knuth, Mark W.; Godzik, Adam; Lesley, Scott A.; Elsliger, Marc-André; Deacon, Ashley M.; Wilson, Ian A.
2015-09-15
Bacterial SH3 (SH3b) domains are commonly fused with papain-like Nlp/P60 cell wall hydrolase domains. To understand how the modular architecture of SH3b and NlpC/P60 affects the activity of the catalytic domain, three putative NlpC/P60 cell wall hydrolases were biochemically and structurally characterized. These enzymes all have γ-
Energy Technology Data Exchange (ETDEWEB)
Perriot, G. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires. Service de physique du solide et de resonnance magnetique
1967-01-01
We report the study of the electrical resistance of a niobium single crystal, at 4.2 deg. K, from the beginning of the superconductive transition to 80 kilo oersteds. Critical fieldsH{sub c2} and H{sub c3} have been determined. Influences on superconductive transition of current density, field-current angle, crystal orientation and magnetoresistance have been studied. Variation laws of low-field transverse and longitudinal magneto-resistances have been determined. (author) [French] La variation de la resistance electrique d'un monocristal cylindrique de niobium a ete etudiee, a 4,2 deg. K, depuis le debut de la transition supraconductrice jusqu'a 80 kilooersteds. Les champs critiques H{sub c2} et H{sub c3} ont ete determines. On a etudie l'influence de la densite de courant, de l'angle champ-courant, de l'anisotropie cristalline et de la magnetoresistance sur la transition supraconductrice. Les lois de variation des magnetoresistances transversale et longitudinale ont ete determinees dans le domaine des champs faibles. (auteur)
Steady-state configurations of Dzyaloshinskii domain walls driven by field and current
Energy Technology Data Exchange (ETDEWEB)
Sánchez-Tejerina, L., E-mail: luis.st@ee.uva.es [Departamento de Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Departamento de Física Aplicada, Facultad de Ciencias, Universidad de Salamanca, 37011 Salamanca (Spain); Alejos, O. [Departamento de Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid (Spain); Martínez, E. [Departamento de Física Aplicada, Facultad de Ciencias, Universidad de Salamanca, 37011 Salamanca (Spain)
2017-02-01
The dynamics of Dzyaloshinskii domain walls (DDW) in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy, for different values of both perpendicular field and longitudinal current excitation associated to the Spin-Hall effect, has been studied, taking into account different values of the interfacial Dzyaloshinskii-Moriya interaction (DMI). This study has been carried out with the help of the q-Φ one-dimensional model and micromagnetic simulations. We have found that Walker breakdown may be avoided by applying a certain threshold current, even though the inverse effect is also possible. We have also found that, for particular values of field and current, the magnetization within the DDW experiences an abrupt change of orientation, which provokes a change on the contribution of current to the terminal DDW velocity. This effect disappears for sufficiently strong DMI, as it is expected from the model. - Highlights: • Steady-state configurations of Dzyaloshinskii domain walls driven by field and current have been reported. • Field-like torques and Slonczewskii-like torques due to spin-orbit interactions have been considered. • The response is associated with the rotation of the domain wall inner magnetization. • An asymmetric behavior arising from the existence of degenerate states is shown. • The asymmetry results in different travelled distances and/or terminal speeds.
Steady-state configurations of Dzyaloshinskii domain walls driven by field and current
International Nuclear Information System (INIS)
Sánchez-Tejerina, L.; Alejos, O.; Martínez, E.
2017-01-01
The dynamics of Dzyaloshinskii domain walls (DDW) in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy, for different values of both perpendicular field and longitudinal current excitation associated to the Spin-Hall effect, has been studied, taking into account different values of the interfacial Dzyaloshinskii-Moriya interaction (DMI). This study has been carried out with the help of the q-Φ one-dimensional model and micromagnetic simulations. We have found that Walker breakdown may be avoided by applying a certain threshold current, even though the inverse effect is also possible. We have also found that, for particular values of field and current, the magnetization within the DDW experiences an abrupt change of orientation, which provokes a change on the contribution of current to the terminal DDW velocity. This effect disappears for sufficiently strong DMI, as it is expected from the model. - Highlights: • Steady-state configurations of Dzyaloshinskii domain walls driven by field and current have been reported. • Field-like torques and Slonczewskii-like torques due to spin-orbit interactions have been considered. • The response is associated with the rotation of the domain wall inner magnetization. • An asymmetric behavior arising from the existence of degenerate states is shown. • The asymmetry results in different travelled distances and/or terminal speeds.
Fate of ZN domain wall in hot holographic QCD
International Nuclear Information System (INIS)
Yee, Ho-Ung
2009-01-01
We first study Z N -domain walls in a deconfined phase of Witten's D4-brane background of pure SU(N) Yang-Mills theory, motivated by a recent work in the case of N = 4 SYM. Similarly to it, we propose that for a large domain wall charge k ∼ N, it is described by k D2-branes blown up into a NS5-brane wrapping S 3 inside S 4 via Myers effect, and we calculate the tension by suitable U-duality. We find a precise Casimir scaling for the tension formula. We then study the fate of Z N -vacua in a presence of fundamental flavors in quenched approximation via gauge/gravity correspondence. In the case of D3/D7 system where one can vary the mass m q of flavors, we show that there is a phase transition at T c ∼ m q , below which the Z N -vacua survive while they are lifted above the critical temperature. We analytically calculate the energy lift of k'th vacua in the massless case, both in the D3/D7 system and in the Sakai-Sugimoto model. (author)
Domain wall universe in the Einstein-Born-Infeld theory
International Nuclear Information System (INIS)
Lee, Bum-Hoon; Lee, Wonwoo; Minamitsuji, Masato
2009-01-01
In this Letter, we discuss the dynamics of a domain wall universe embedded into the charged black hole spacetime of the Einstein-Born-Infeld (EBI) theory. There are four kinds of possible spacetime structures, i.e., those with no horizon, the extremal one, those with two horizons (as the Reissner-Nordstroem black hole), and those with a single horizon (as the Schwarzshild black hole). We derive the effective cosmological equations on the wall. In contrast to the previous works, we take the contribution of the electrostatic energy on the wall into account. By examining the properties of the effective potential, we find that a bounce can always happen outside the (outer) horizon. For larger masses of the black hole, the height of the barrier between the horizon and bouncing point in the effective potential becomes smaller, leading to longer time scales of bouncing process. These results are compared with those in the previous works.
Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors
Directory of Open Access Journals (Sweden)
Sergio Iván Ravelo Arias
2013-12-01
Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.
Topological Luttinger liquids from decorated domain walls
Parker, Daniel E.; Scaffidi, Thomas; Vasseur, Romain
2018-04-01
We introduce a systematic construction of a gapless symmetry-protected topological phase in one dimension by "decorating" the domain walls of Luttinger liquids. The resulting strongly interacting phases provide a concrete example of a gapless symmetry-protected topological (gSPT) phase with robust symmetry-protected edge modes. Using boundary conformal field theory arguments, we show that while the bulks of such gSPT phases are identical to conventional Luttinger liquids, their boundary critical behavior is controlled by a different, strongly coupled renormalization group fixed point. Our results are checked against extensive density matrix renormalization group calculations.
On k-string tensions and domain walls in N=1 gluodynamics
International Nuclear Information System (INIS)
Armoni, A.; Shifman, M.
2003-01-01
We discuss the k-dependence of the k-string tension σ k in SU(N) supersymmetric gluodynamics. As is well known, at large N the k-string consists, to leading order, of k noninteracting fundamental strings, so that σ k =kσ 1 . We argue, both from field-theory and string-theory side, that subleading corrections to this formula run in powers of 1/N 2 rather than 1/N, thus excluding the Casimir scaling. We suggest a heuristic model allowing one to relate the k-string tension in four-dimensional gluodynamics with the tension of the BPS domain walls (k-walls). In this model the domain walls are made of a net of strings connected to each other by baryon vertices. The relation emerging in this way leads to the sine formula σ k ∼Λ 2 Nsinπk/N. We discuss possible corrections to the sine law, and present arguments that they are suppressed by 1/k factors. We explain why the sine law does not hold in two dimensions. Finally, we discuss the applicability of the sine formula for non-supersymmetric orientifold field theories
Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.
Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo
2015-09-21
Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.
An investigation of time-dependent domain wall pinning effects in Tb/Fe multilayer thin flms
Phillips, G.N.; O'grady, K.; El-Hilo, M.
2002-01-01
Reverse domain nucleation time measurements have been performed on two Tb/Fe multilayer magneto-optic films exhibiting different degrees of domain wall pinning.A linear relationship between ln (reverse domain nucleation time) and the applied field has been predicted and observed for a sample
Non-local magnetoresistance in YIG/Pt nanostructures
Energy Technology Data Exchange (ETDEWEB)
Goennenwein, Sebastian T. B., E-mail: goennenwein@wmi.badw.de; Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Schlitz, Richard; Ganzhorn, Kathrin [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Althammer, Matthias [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany)
2015-10-26
We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.
Energy Technology Data Exchange (ETDEWEB)
Radchenko, I R; Filimonova, L A [Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation)
1993-06-01
The patterns of polarized beam interference (conoscopic patterns) enable assessment of orientation and parameters of crystal's optical indicatrix. The presented conoscopic patterns of gadolinium molybdate crystal in the vicinity to plane and wedge-live domain walls differ from conoscopic patterns of the crystals far away from these walls which allows to spear about changes occurring in the crystal in the vicinity to domain walls.
Large, non-saturating magnetoresistance in WTe2.
Ali, Mazhar N; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D; Schoop, Leslie M; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N P; Cava, R J
2014-10-09
Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.
Domain wall width of lithium niobate poled during growth
Brooks, R; Hole, D E; Callejo, D; Bermudez, V; Diéguez, E
2003-01-01
Good quality crystals of periodically poled lithium niobate can be generated directly during growth. However, the temperature gradients at the zone boundaries define the width of the regions where the polarity is reversed. Hence, the region influenced the domain transition may be a significant fraction of the overall poling period for material poled during growth. Evidence for the scale of this feature is reported both by chemical etching and by the less common method of ion beam luminescence and the 'domain wall' width approximately 1 mu m for these analyses. The influence of the reversal region may differ for alternative techniques but the relevance to device design for second harmonic generation is noted.
The Cosmological Constant and Domain Walls in Orientifold Field Theories and N=1 Gluodynamics
Armoni, Adi
2003-01-01
We discuss domain walls and vacuum energy density (cosmological constant) in N=1 gluodynamics and in non-supersymmetric large N orientifold field theories which have been recently shown to be planar equivalent (in the boson sector) to N=1 gluodynamics. A relation between the vanishing force between two parallel walls and vanishing cosmological constant is pointed out. This relation may explain why the cosmological constant vanishes in the orientifold field theory at leading order although the hadronic spectrum of this theory does not contain fermions in the limit N-->infinity. The cancellation is among even and odd parity bosonic contributions, due to NS-NS and R-R cancellations in the annulus amplitude of the underlying string theory. We use the open-closed string channel duality to describe interaction between the domain walls which is interpreted as the exchange of composite ``dilatons'' and ``axions'' coupled to the walls. Finally, we study some planar equivalent pairs in which both theories in the parent...
Magnetic scanning gate microscopy of a domain wall nanosensor using microparticle probe
Energy Technology Data Exchange (ETDEWEB)
Corte-León, H., E-mail: hector.corte@npl.co.uk [National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Royal Holloway University of London, Egham TW20 0EX (United Kingdom); Gribkov, B. [National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Krzysteczko, P. [Physikalisch-Technische Bundesanstalt, Braunschweig D-38116 (Germany); Marchi, F.; Motte, J.-F. [University of Grenoble Alpes, Inst. NEEL, Grenoble F-38042 (France); CNRS, Inst. NEEL, Grenoble F-38042 (France); Schumacher, H.W. [Physikalisch-Technische Bundesanstalt, Braunschweig D-38116 (Germany); Antonov, V. [Royal Holloway University of London, Egham TW20 0EX (United Kingdom); Kazakova, O. [National Physical Laboratory, Teddington TW11 0LW (United Kingdom)
2016-02-15
We apply the magnetic scanning gate microscopy (SGM) technique to study the interaction between a magnetic bead (MB) and a domain wall (DW) trapped in an L-shaped magnetic nanostructure. Magnetic SGM is performed using a custom-made probe, comprising a hard magnetic NdFeB bead of diameter 1.6 µm attached to a standard silicon tip. The MB–DW interaction is detected by measuring changes in the electrical resistance of the device as a function of the tip position. By scanning at different heights, we create a 3D map of the MB–DW interaction and extract the sensing volume for different widths of the nanostructure's arms. It is shown that for 50 nm wide devices the sensing volume is a cone of 880 nm in diameter by 1.4 µm in height, and reduces down to 800 nm in height for 100 nm devices with almost no change in its diameter. - Highlights: • AFM tips with a magnetic bead attached used to test interaction with domain wall. • Domain wall inside a nanostructure affect the electrical resistance. • Recording electrical resistance while scanning with modified AFM probe. • Change of resistance as a function of the position of the magnetic bead. • This allows comparing different devices in a reproducible and controllable way.
Shang, Jianyu; Deng, Zhihong; Fu, Mengyin; Wang, Shunting
2016-06-16
Traditional artillery guidance can significantly improve the attack accuracy and overall combat efficiency of projectiles, which makes it more adaptable to the information warfare of the future. Obviously, the accurate measurement of artillery spin rate, which has long been regarded as a daunting task, is the basis of precise guidance and control. Magnetoresistive (MR) sensors can be applied to spin rate measurement, especially in the high-spin and high-g projectile launch environment. In this paper, based on the theory of a MR sensor measuring spin rate, the mathematical relationship model between the frequency of MR sensor output and projectile spin rate was established through a fundamental derivation. By analyzing the characteristics of MR sensor output whose frequency varies with time, this paper proposed the Chirp z-Transform (CZT) time-frequency (TF) domain analysis method based on the rolling window of a Blackman window function (BCZT) which can accurately extract the projectile spin rate. To put it into practice, BCZT was applied to measure the spin rate of 155 mm artillery projectile. After extracting the spin rate, the impact that launch rotational angular velocity and aspect angle have on the extraction accuracy of the spin rate was analyzed. Simulation results show that the BCZT TF domain analysis method can effectively and accurately measure the projectile spin rate, especially in a high-spin and high-g projectile launch environment.
Spin-dependent transport in cobalt nanocontacts
Energy Technology Data Exchange (ETDEWEB)
Sarau, G.
2007-04-16
The magnetoresistance response of cobalt nanocontacts with varying geometries formed between two extended electrodes has been experimentally investigated and linked to micromagnetic simulations. The contribution of the nanoconstriction to the measured magnetoresistance signal has been separated from that of the electrode bulk. The different nanocontact geometries exhibit different shape anisotropies resulting in a characteristic behavior of the magnetization at each nanocontact. The magnetization reversal processes are explained on the basis of the anisotropic magnetoresistance and domain wall scattering effects. The domain wall resistance takes positive values, which is in agreement with models based on the spin mistracking inside the domain wall. The 4 K MR measurements are found to be influenced by the exchange bias effect between the ferromagnetic cobalt electrodes and the antiferromagnetic oxidized Co surface. When cooling down in an applied magnetic field, the uniform biased Co layer behaves as if it possesses a unidirectional anisotropy axis along the field cooling direction. In the zero field cooling case, the exchange bias varies locally throughout the sample giving rise to non-reproducible successive MR traces. (orig.)
Domain walls, near-BPS bubbles, and probabilities in the landscape
International Nuclear Information System (INIS)
Ceresole, Anna; Dall'Agata, Gianguido; Giryavets, Alexander; Kallosh, Renata; Linde, Andrei
2006-01-01
We develop a theory of static Bogomol'nyi-Prasad-Sommerfield (BPS) domain walls in stringy landscape and present a large family of BPS walls interpolating between different supersymmetric vacua. Examples include Kachru, Kallosh, Linde, Trivedi models, STU models, type IIB multiple flux vacua, and models with several Minkowski and anti-de Sitter vacua. After the uplifting, some of the vacua become de Sitter (dS), whereas some others remain anti-de Sitter. The near-BPS walls separating these vacua may be seen as bubble walls in the theory of vacuum decay. As an outcome of our investigation of the BPS walls, we found that the decay rate of dS vacua to a collapsing space with a negative vacuum energy can be quite large. The parts of space that experience a decay to a collapsing space, or to a Minkowski vacuum, never return back to dS space. The channels of irreversible vacuum decay serve as sinks for the probability flow. The existence of such sinks is a distinguishing feature of the landscape. We show that it strongly affects the probability distributions in string cosmology
Isospin Breaking Corrections to the HVP with Domain Wall Fermions
Boyle, Peter; Guelpers, Vera; Harrison, James; Juettner, Andreas; Lehner, Christoph; Portelli, Antonin; Sachrajda, Christopher
2018-03-01
We present results for the QED and strong isospin breaking corrections to the hadronic vacuum polarization using Nf = 2 + 1 Domain Wall fermions. QED is included in an electro-quenched setup using two different methods, a stochastic and a perturbative approach. Results and statistical errors from both methods are directly compared with each other.
Anomalous magnetoresistance in Fibonacci multilayers.
Energy Technology Data Exchange (ETDEWEB)
Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)
2012-01-01
We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.
Localized fermions on domain walls and extended supersymmetric quantum mechanics
International Nuclear Information System (INIS)
Oikonomou, V K
2014-01-01
We study fermionic fields localized on topologically unstable domain walls bounded by strings in a grand unified theory theoretical framework. Particularly, we found that the localized fermionic degrees of freedom, which are up and down-quarks as well as charged leptons, are connected to three independent N = 2, d = 1 supersymmetric quantum mechanics algebras. As we demonstrate, these algebras can be combined to form higher order representations of N = 2, d = 1 supersymmetry. Due to the uniform coupling of the domain wall solutions to the down-quarks and leptons, we also show that a higher order N = 2, d = 1 representation of the down-quark–lepton system is invariant under a duality transformation between the couplings. In addition, the two N = 2, d = 1 supersymmetries of the down-quark–lepton system, combine at the coupling unification scale to form an N = 4, d = 1 supersymmetry. Furthermore, we present the various extra geometric and algebraic attributes that the fermionic systems acquire, owing to the underlying N = 2, d = 1 algebras. (paper)
Field- and current-driven domain wall dynamics: An experimental picture
International Nuclear Information System (INIS)
Beach, G.S.D.; Knutson, C.; Tsoi, M.; Erskine, J.L.
2007-01-01
Field- and current-driven domain wall velocities are measured and discussed in terms of existing spin-torque models. A reversal in the roles of adiabatic and non-adiabatic spin-torque is shown to arise in those models below and above Walker breakdown. The measured dependence of velocity on current is the same in both regimes, indicating both spin-torque components have similar magnitude. However, the models on which these conclusions are based have serious quantitative shortcomings in describing the observed field-driven wall dynamics, for which they were originally developed. Hence, the applicability of simple one-dimensional models to most experimental conditions may be limited
Magnetoresistance in RCo2 spin-fluctuation systems
International Nuclear Information System (INIS)
Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.
2004-01-01
The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range
The domain walls of gauged maximal supergravities and their M-theory origin
International Nuclear Information System (INIS)
Bergshoe, Eric; Nielsen, Mikkel; Roest, Diederik
2004-01-01
We consider gauged maximal supergravities with CSO(p,q,r) gauge groups and their relation to the branes of string and M-theory. The gauge groups are characterised by n mass parameters, where n is the transverse dimension of the brane. We give the scalar potentials and construct the corresponding domain wall solutions. In addition, we show the higher-dimensional origin of the domain walls in terms of (distributions of) branes. We put particular emphasis on the CSO(p,q,r) gauged supergravities in D = 9 and D = 8, which are related to the D7-brane and D6-brane, respectively. In these cases, twisted and group manifold reductions are shown to play a crucial role. We also discuss salient features of the corresponding brane distributions. (author)
Tunneling decay of false domain walls: The silence of the lambs
Energy Technology Data Exchange (ETDEWEB)
Haberichter, Mareike, E-mail: M.Haberichter@kent.ac.uk [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); School of Mathematics, Statistics and Actuarial Science, University of Kent, Canterbury CT2 7NF (United Kingdom); MacKenzie, Richard, E-mail: richard.mackenzie@umontreal.ca; Ung, Yvan, E-mail: klingon-ecology@hotmail.com [Groupe de Physique des Particules, Département de Physique, Université de Montréal, C.P. 6128, Succursale Centre-ville, Montreal, Québec H3C 3J7 (Canada); Paranjape, M. B., E-mail: paranj@lps.umontreal.ca [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Groupe de Physique des Particules, Département de Physique, Université de Montréal, C.P. 6128, Succursale Centre-ville, Montreal, Québec H3C 3J7 (Canada); St. John’s College, University of Cambridge, Cambridge CB2 1TP (United Kingdom)
2016-04-15
We study the decay of “false” domain walls, that is, metastable states of the quantum theory where the true vacuum is trapped inside the wall with the false vacuum outside. We consider a theory with two scalar fields, a shepherd field and a field of sheep. The shepherd field serves to herd the solitons of the sheep field so that they are nicely bunched together. However, quantum tunnelling of the shepherd field releases the sheep to spread out uncontrollably. We show how to calculate the tunnelling amplitude for such a disintegration.
Tunneling decay of false domain walls: The silence of the lambs
International Nuclear Information System (INIS)
Haberichter, Mareike; MacKenzie, Richard; Ung, Yvan; Paranjape, M. B.
2016-01-01
We study the decay of “false” domain walls, that is, metastable states of the quantum theory where the true vacuum is trapped inside the wall with the false vacuum outside. We consider a theory with two scalar fields, a shepherd field and a field of sheep. The shepherd field serves to herd the solitons of the sheep field so that they are nicely bunched together. However, quantum tunnelling of the shepherd field releases the sheep to spread out uncontrollably. We show how to calculate the tunnelling amplitude for such a disintegration.
Transmission XMCD-PEEM imaging of an engineered vertical FEBID cobalt nanowire with a domain wall
Wartelle, A.; Pablo-Navarro, J.; Staňo, M.; Bochmann, S.; Pairis, S.; Rioult, M.; Thirion, C.; Belkhou, R.; de Teresa, J. M.; Magén, C.; Fruchart, O.
2018-01-01
Using focused electron-beam-induced deposition, we fabricate a vertical, platinum-coated cobalt nanowire with a controlled three-dimensional structure. The latter is engineered to feature bends along the height: these are used as pinning sites for domain walls, which are obtained at remanence after saturation of the nanostructure in a horizontally applied magnetic field. The presence of domain walls is investigated using x-ray magnetic circular dichroism (XMCD) coupled to photoemission electron microscopy (PEEM). The vertical geometry of our sample combined with the low incidence of the x-ray beam produce an extended wire shadow which we use to recover the wire’s magnetic configuration. In this transmission configuration, the whole sample volume is probed, thus circumventing the limitation of PEEM to surfaces. This article reports on the first study of magnetic nanostructures standing perpendicular to the substrate with XMCD-PEEM. The use of this technique in shadow mode enabled us to confirm the presence of a domain wall without direct imaging of the nanowire.
The mechanism of domain-wall structure formation in Ar-Kr submonolayer films on graphite
Directory of Open Access Journals (Sweden)
A. Patrykiejew
2014-12-01
Full Text Available Using Monte Carlo simulation method in the canonical ensemble, we have studied the commensurate-incommensurate transition in two-dimensional finite mixed clusters of Ar and Kr adsorbed on graphite basal plane at low temperatures. It has been demonstrated that the transition occurs when the argon concentration exceeds the value needed to cover the peripheries of the cluster. The incommensurate phase exhibits a similar domain-wall structure as observed in pure krypton films at the densities exceeding the density of a perfect (√3x√3R30º commensurate phase, but the size of commensurate domains does not change much with the cluster size. When the argon concentration increases, the composition of domain walls changes while the commensurate domains are made of pure krypton. We have constructed a simple one-dimensional Frenkel-Kontorova-like model that yields the results being in a good qualitative agreement with the Monte Carlo results obtained for two-dimensional systems.
Atiyah-Patodi-Singer index theorem for domain-wall fermion Dirac operator
Fukaya, Hidenori; Onogi, Tetsuya; Yamaguchi, Satoshi
2018-03-01
Recently, the Atiyah-Patodi-Singer(APS) index theorem attracts attention for understanding physics on the surface of materials in topological phases. Although it is widely applied to physics, the mathematical set-up in the original APS index theorem is too abstract and general (allowing non-trivial metric and so on) and also the connection between the APS boundary condition and the physical boundary condition on the surface of topological material is unclear. For this reason, in contrast to the Atiyah-Singer index theorem, derivation of the APS index theorem in physics language is still missing. In this talk, we attempt to reformulate the APS index in a "physicist-friendly" way, similar to the Fujikawa method on closed manifolds, for our familiar domain-wall fermion Dirac operator in a flat Euclidean space. We find that the APS index is naturally embedded in the determinant of domain-wall fermions, representing the so-called anomaly descent equations.
Steady motion of skyrmions and domains walls under diffusive spin torques
Elías, Ricardo Gabriel
2017-03-09
We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).
Steady motion of skyrmions and domains walls under diffusive spin torques
Elí as, Ricardo Gabriel; Vidal-Silva, Nicolas; Manchon, Aurelien
2017-01-01
We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).
Localization of bulk form fields on dilatonic domain walls
International Nuclear Information System (INIS)
Youm, Donam
2001-06-01
We study the localization properties of bulk form potentials on dilatonic domain walls. We find that bulk form potentials of any ranks can be localized as form potentials of the same ranks or one lower ranks, for any values of the dilaton coupling parameter. For large enough values of the dilaton coupling parameter, bulk form potentials of any ranks can be localized as form potentials of both the same ranks and one lower ranks. (author)
Tunneling anisotropic magnetoresistance driven by magnetic phase transition.
Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F
2017-09-06
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.
Large magnetoresistance effect in nitrogen-doped silicon
Directory of Open Access Journals (Sweden)
Tao Wang
2017-05-01
Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.
Energy Technology Data Exchange (ETDEWEB)
Hassel, Christoph
2009-08-11
In the present thesis, the spin dependent transport in epitaxial Fe wires as well as in perpendicularly magnetized multilayer wires is investigated. The main focus is on the investigation of quantum transport phenomena, the domain wall resistance as well as the current induced domain wall motion. Epitaxial Fe wires are prepared from epitaxial Fe films by means of electron beam lithography. Because of the intrinsic magnetic anisotropy, it is possible to prepare wires with a remanent transversal magnetization. Magnetic force microscopy is used to image the magnetic state of single wires. The magnetization reversal behaviour of these wires is investigated in detail using magnetoresistance measurements. These measurements are dominated by effects of the anisotropic magnetoresistance and can be explained by micromagnetic calculations. For the first time, quantum transport phenomena in epitaxial Fe wires are studied by magnetoresistance measurements for temperatures down to 20 mK. These measurements clearly indicate that, independent of the wire width and orientation, no contribution due to weak electron localization can be observed. The results are quantitatively explained within the framework of enhanced electron-electron interactions. Furthermore, by reducing the wire width the onset of the transition from two-dimensional to one-dimensional behaviour is found. To determine the domain wall resistance, a different number of domain walls is created in various structures, whereby the epitaxial samples allow to investigate different domain wall structures. First, a technique based on the stray field of a magnetic force microscope tip is presented. Furthermore, the influence of the shape anisotropy on the coercive field of single wires is used. Contributions to the observed resistance change due to the anisotropic magnetoresistance are calculated using micromagnetic simulations. A positive intrinsic relative resistance increase of 0.2% within the domain wall is found at
Shepley, Philippa M.; Tunnicliffe, Harry; Shahbazi, Kowsar; Burnell, Gavin; Moore, Thomas A.
2018-04-01
We study the magnetic properties of perpendicularly magnetized Pt/Co/Ir thin films and investigate the domain-wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultrathin films. Measurements of the Co layer thickness dependence of saturation magnetization, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e., DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain-wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain-wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter α , we find that both α and the velocity scaling parameter v0 change as a function of in-plane bias field.
Möbius domain-wall fermions on gradient-flowed dynamical HISQ ensembles
Berkowitz, Evan; Bouchard, Chris; Chang, Chia Cheng; Clark, M. A.; Joó, Bálint; Kurth, Thorsten; Monahan, Christopher; Nicholson, Amy; Orginos, Kostas; Rinaldi, Enrico; Vranas, Pavlos; Walker-Loud, André
2017-09-01
We report on salient features of a mixed lattice QCD action using valence Möbius domain-wall fermions solved on the dynamical Nf=2 +1 +1 highly improved staggered quark sea-quark ensembles generated by the MILC Collaboration. The approximate chiral symmetry properties of the valence fermions are shown to be significantly improved by utilizing the gradient-flow scheme to first smear the highly improved staggered quark configurations. The greater numerical cost of the Möbius domain-wall inversions is mitigated by the highly efficient QUDA library optimized for NVIDIA GPU accelerated compute nodes. We have created an interface to this optimized QUDA solver in Chroma. We provide tuned parameters of the action and performance of QUDA using ensembles with the lattice spacings a ≃{0.15 ,0.12 ,0.09 } fm and pion masses mπ≃{310 ,220 ,130 } MeV . We have additionally generated two new ensembles with a ˜0.12 fm and mπ˜{400 ,350 } MeV . With a fixed flow time of tg f=1 in lattice units, the residual chiral symmetry breaking of the valence fermions is kept below 10% of the light quark mass on all ensembles, mres≲0.1 ×ml , with moderate values of the fifth dimension L5 and a domain-wall height M5≤1.3 . As a benchmark calculation, we perform a continuum, infinite volume, physical pion and kaon mass extrapolation of FK±/Fπ± and demonstrate our results are independent of flow time and consistent with the FLAG determination of this quantity at the level of less than one standard deviation.
Magnetoresistances in Ni80Fe20-ITO granular film
International Nuclear Information System (INIS)
Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng
2012-01-01
Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.
Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke
2001-01-01
The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.
Huge magnetoresistance effect of highly oriented pyrolytic graphite
International Nuclear Information System (INIS)
Du Youwei; Wang Zhiming; Ni Gang; Xing Dingyu; Xu Qingyu
2004-01-01
Graphite is a quasi-two-dimensional semimetal. However, for usual graphite the magnetoresistance is not so high due to its small crystal size and no preferred orientation. Huge positive magnetoresistance up to 85300% at 4.2 K and 4950% at 300 K under 8.15 T magnetic field was found in highly oriented pyrolytic graphite. The mechanism of huge positive magnetoresistance is not only due to ordinary magnetoresistance but also due to magnetic-field-driven semimetal-insulator transition
Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.
Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng
2016-05-27
Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.
Direct observation of current-induced motion of a 3D vortex domain wall in cylindrical nanowires
Ivanov, Yurii P.
2017-05-08
The current-induced dynamics of 3D magnetic vortex domain walls in cylindrical Co/Ni nanowires are revealed experimentally using Lorentz microscopy and theoretically using micromagnetic simulations. We demonstrate that a spin-polarized electric current can control the reversible motion of 3D vortex domain walls, which travel with a velocity of a few hundred meters per second. This finding is a key step in establishing fast, high-density memory devices based on vertical arrays of cylindrical magnetic nanowires.
Direct observation of current-induced motion of a 3D vortex domain wall in cylindrical nanowires
Ivanov, Yurii P.; Chuvilin, Andrey; Lopatin, Sergei; Mohammed, Hanan; Kosel, Jü rgen
2017-01-01
The current-induced dynamics of 3D magnetic vortex domain walls in cylindrical Co/Ni nanowires are revealed experimentally using Lorentz microscopy and theoretically using micromagnetic simulations. We demonstrate that a spin-polarized electric current can control the reversible motion of 3D vortex domain walls, which travel with a velocity of a few hundred meters per second. This finding is a key step in establishing fast, high-density memory devices based on vertical arrays of cylindrical magnetic nanowires.
Large magnetoresistance tunnelling through a magnetically modulated nanostructure
International Nuclear Information System (INIS)
Lu Maowang; Zhang Lide
2003-01-01
Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system
Energy Technology Data Exchange (ETDEWEB)
Dobák, Samuel, E-mail: samuel.dobak@student.upjs.sk [Institute of Physics, Faculty of Science, Pavol Jozef Šafárik University, Park Angelinum 9, 041 54 Košice (Slovakia); Füzer, Ján; Kollár, Peter [Institute of Physics, Faculty of Science, Pavol Jozef Šafárik University, Park Angelinum 9, 041 54 Košice (Slovakia); Fáberová, Mária; Bureš, Radovan [Institute of Materials Research, Slovak Academy of Sciences, Watsonova 47, 043 53 Košice (Slovakia)
2017-03-15
This study sheds light on the dynamic magnetization process in iron/resin soft magnetic composites from the viewpoint of quantitative decomposition of their complex permeability spectra into the viscous domain wall motion and magnetization rotation. We present a comprehensive view on this phenomenon over the broad family of samples with different average particles dimension and dielectric matrix content. The results reveal the pure relaxation nature of magnetization processes without observation of spin resonance. The smaller particles and higher amount of insulating resin result in the prevalence of rotations over domain wall movement. The findings are elucidated in terms of demagnetizing effects rising from the heterogeneity of composite materials. - Highlights: • A first decomposition of complex permeability into domain wall and rotation parts in soft magnetic composites. • A pure relaxation nature of dynamic magnetization processes. • A complete loss separation in soft magnetic composites. • The domain walls activity is considerably suppressed in composites with smaller iron particles and higher matrix content. • The demagnetizing field acts as a significant factor at the dynamic magnetization process.
Interlocked chiral/polar domain walls and large optical rotation in Ni3TeO6
Directory of Open Access Journals (Sweden)
Xueyun Wang
2015-07-01
Full Text Available Chirality, i.e., handedness, pervades much of modern science from elementary particles, DNA-based biology to molecular chemistry; however, most of the chirality-relevant materials have been based on complex molecules. Here, we report inorganic single-crystalline Ni3TeO6, forming in a corundum-related R3 structure with both chirality and polarity. These chiral Ni3TeO6 single crystals exhibit a large optical specific rotation (α—1355° dm−1 cm3 g−1. We demonstrate, for the first time, that in Ni3TeO6, chiral and polar domains form an intriguing domain pattern, resembling a radiation warning sign, which stems from interlocked chiral and polar domain walls through lowering of the wall energy.
Colossal Magnetoresistance Manganites and Related Prototype Devices
Liu, Yukuai; Yin, Yuewei; Li, Xiaoguang
2013-01-01
We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions ...
Anisotropic magnetoresistance in a Fermi glass
International Nuclear Information System (INIS)
Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)
1986-01-01
Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity
Energy Technology Data Exchange (ETDEWEB)
Ducharne, B., E-mail: Benjamin.ducharne@insa-lyon.fr; Le, M.Q.; Sebald, G.; Cottinet, P.J.; Guyomar, D.; Hebrard, Y.
2017-06-15
Highlights: • Barkhausen noise energy versus excitation field hysteresis cycles MBN{sub energy}(H). • Difference in the dynamics of the induction field B and of the MBN{sub energy}. • Dynamic behavior of MBN{sub energy}(H) cycles is first-order. • Dynamic behavior of B(H) cycles is non-entire order. - Abstract: By means of a post-processing technique, we succeeded in plotting magnetic Barkhausen noise energy hysteresis cycles MBN{sub energy}(H). These cycles were compared to the usual hysteresis cycles, displaying the evolution of the magnetic induction field B versus the magnetic excitation H. The divergence between these comparisons as the excitation frequency was increased gave rise to the conclusion that there was a difference in the dynamics of the induction field and of the MBN{sub energy} related to the domain wall movements. Indeed, for the MBN{sub energy} hysteresis cycle, merely the domain wall movements were involved. On the other hand, for the usual B(H) cycle, two dynamic contributions were observed: domain wall movements and diffusion of the magnetic field excitation. From a simulation point of view, it was demonstrated that over a large frequency bandwidth a correct dynamic behavior of the domain wall movement MBN{sub energy}(H) cycle could be taken into account using first-order derivation whereas fractional orders were required for the B(H) cycles. The present article also gives a detailed description of how to use the developed process to obtain the MBN{sub energy}(H) hysteresis cycle as well as its evolution as the frequency increases. Moreover, this article provides an interesting explanation of the separation of magnetic loss contributions through a magnetic sample: a wall movement contribution varying according to first-order dynamics and a diffusion contribution which in a lump model can be taken into account using fractional order dynamics.
Magnetoresistance of magnetically doped ZnO films
Energy Technology Data Exchange (ETDEWEB)
Behan, A J; Mokhtari, A; Blythe, H J; Fox, A M; Gehring, G A [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M, E-mail: G.A.Gehring@sheffield.ac.u [Division of Superconductivity and Magnetism, University of Leipzig, D-04103, Leipzig (Germany)
2009-08-26
Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.
On-Chip Manipulation of Protein-Coated Magnetic Beads via Domain-Wall Conduits
DEFF Research Database (Denmark)
Donolato, Marco; Vavassori, Paolo; Gobbi, Marco
2010-01-01
Geometrically constrained magnetic domain walls (DWs) in magnetic nanowires can be manipulated at the nanometer scale. The inhomogeneous magnetic stray field generated by a DW can capture a magnetic nanoparticle in solution. On-chip nanomanipulation of individual magnetic beads coated with proteins...
Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets
Akosa, Collins Ashu; Kim, Won-Seok; Bisig, André
2015-01-01
Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ∼∇2[m×(u⋅∇)m]+ξ∇2[(u⋅∇)m], where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.
Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets
Akosa, Collins Ashu
2015-03-12
Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ∼∇2[m×(u⋅∇)m]+ξ∇2[(u⋅∇)m], where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.
High temperature meson propagators with domain-wall quarks
International Nuclear Information System (INIS)
Lagae, J.-F.; Sinclair, D. K.
1999-01-01
We study the chiral properties of domain-wall quarks at high temperatures on an ensemble of quenched configurations. Low lying eigenmodes of the Dirac operator are calculated and used to check the extent to which the Atiyah-Singer index theorem is obeyed on lattices with finite N 5 . We calculate the connected and disconnected screening propagators for the lowest mass scalar and pseudoscalar mesons in the sectors of different topological charge and note that they behave as expected. Separating out the would-be zero eigenmodes enables us to accurately estimate the disconnected propagators with far less effort than would be needed otherwise
High temperature meson propagators with domain-wall quarks
International Nuclear Information System (INIS)
Lagaee, J.-F.; Sinclair, D.K.
2000-01-01
We study the chiral properties of domain-wall quarks at high temperatures on an ensemble of quenched configurations. Low lying eigenmodes of the Dirac operator are calculated and used to check the extent to which the Atiyah-Singer index theorem is obeyed on lattices with finite N 5 . We calculate the connected and disconnected screening propagators for the lowest mass scalar and pseudoscalar mesons in the sectors of different topological charge and note that they behave as expected. Separating out the would-be zero eigenmodes enables us to accurately estimate the disconnected propagators with far less effort than would be needed otherwise
Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions
Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo
2015-01-01
Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...
Colossal magnetoresistance manganites
Indian Academy of Sciences (India)
Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.
Sugiyama, Yuki; Wakazaki, Mayumi; Toyooka, Kiminori; Fukuda, Hiroo; Oda, Yoshihisa
2017-08-21
Spatial control of cell-wall deposition is essential for determining plant cell shape [1]. Rho-type GTPases, together with the cortical cytoskeleton, play central roles in regulating cell-wall patterning [2]. In metaxylem vessel cells, which are the major components of xylem tissues, active ROP11 Rho GTPases form oval plasma membrane domains that locally disrupt cortical microtubules, thereby directing the formation of oval pits in secondary cell walls [3-5]. However, the regulatory mechanism that determines the planar shape of active Rho of Plants (ROP) domains is still unknown. Here we show that IQD13 associates with cortical microtubules and the plasma membrane to laterally restrict the localization of ROP GTPase domains, thereby directing the formation of oval secondary cell-wall pits. Loss and overexpression of IQD13 led to the formation of abnormally round and narrow secondary cell-wall pits, respectively. Ectopically expressed IQD13 increased the presence of parallel cortical microtubules by promoting microtubule rescue. A reconstructive approach revealed that IQD13 confines the area of active ROP domains within the lattice of the cortical microtubules, causing narrow ROP domains to form. This activity required the interaction of IQD13 with the plasma membrane. These findings suggest that IQD13 positively regulates microtubule dynamics as well as their linkage to the plasma membrane, which synergistically confines the area of active ROP domains, leading to the formation of oval secondary cell-wall pits. This finding sheds light on the role of microtubule-plasma membrane linkage as a lateral fence that determines the planar shape of Rho GTPase domains. Copyright © 2017 Elsevier Ltd. All rights reserved.
Tunneling magnetoresistance in Si nanowires
Montes Muñoz, Enrique
2016-11-09
We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.
Energy Technology Data Exchange (ETDEWEB)
Blanco-Roldán, C., E-mail: c.blanco@cinn.es [Departamento de Física, Universidad de Oviedo, Avenida Calvo Sotelo s/n, 33007 Oviedo (Spain); Centro de Investigación en Nanomateriales y Nanotecnología CINN (CSIC, Universidad de Oviedo), Avenida de la Vega 4-6, 33940 El Entrego (Spain); Quirós, C.; Rodriguez-Rodriguez, G.; Vélez, M.; Martín, J.I.; Alameda, J.M. [Departamento de Física, Universidad de Oviedo, Avenida Calvo Sotelo s/n, 33007 Oviedo (Spain); Centro de Investigación en Nanomateriales y Nanotecnología CINN (CSIC, Universidad de Oviedo), Avenida de la Vega 4-6, 33940 El Entrego (Spain)
2016-02-15
Three-dimensional magnetic circuits composed of Co microwires crossed by elevated Co bridges have been patterned on Si substrate by e-beam lithography and lift-off process. The lithographic procedure includes a double resist procedure that optimizes the shape of the bridge, so that 200 nm air gaps can be routinely achieved in between the wire and bridge elements. Microwire magnetization reversal processes have been analyzed by magneto-optical Kerr effect microscopy with different remanent bridge configurations. When the Co bridge is magnetized along the in-plane direction parallel to the wire axis, its stray field induces a marked pinning effect on domain wall propagation along the wire below it, even without being in contact. Changing the sign of the remanent state of the bridge, domain wall pinning can be selected to occur in either the ascending or descending branches of the wire hysteresis loop. Thus, these wire-bridge 3D circuits provide a simple system for tunable domain wall pinning controllable through the pre-recorded bridge remanent state. - Highlights: • Electron beam lithography is used to fabricate a tridimensional magnetic circuit. • Proposed circuit is made of a Co bridge overcrossing a non-contacted Co microwire. • Domain wall propagation can be controlled by previous magnetization of the system. • Domain wall pinning in the wire depends on the applied magnetic field sign.
Energy Technology Data Exchange (ETDEWEB)
Chen, Jiyun [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); School of Materials Science and Engineering, China University of Mining & Technology, Xuzhou 221116 (China); Tu, Ruikang [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); School of Materials Science and Engineering, Soochow University, Suzhou 215000 (China); Fang, Xiaoting [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); Gu, Quanchao [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); School of Materials Science and Engineering, Soochow University, Suzhou 215000 (China); Zhou, Yanying [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); Cui, Rongjing [Department of Chemistry, Changshu Institute of Technology, Changshu 215500 (China); Han, Zhida, E-mail: han@cslg.edu.cn [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); Zhang, Lei; Fang, Yong [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); Qian, Bin, E-mail: njqb@cslg.edu.cn [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); Zhang, Chengliang [School of Science, Jiangnan University, Wuxi 214122 (China); Jiang, Xuefan [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China)
2017-03-15
Recently, a new type of exchange bias (EB) after zero-field cooling has attracted considerable interest mainly in bulk magnetic competing systems. Here, we use a detailed magnetotransport investigation to probe the ground state and zero-field cooled EB (ZEB) in Mn{sub 50}Ni{sub 41}Sn{sub 9} ribbon. Both ZEB and field cooled EB were detected in magnetoresistance results consistent with magnetic measurement. A pure spin-glass ground state is proposed based on parabolic shape of low-field magnetoresistance combined with AC magnetization, memory effect. The appearance of ZEB is attributed to the field-induced nucleation and growth of ferromagnetic domains in the spin glass matrix forming unidirectional anisotropy at the interface. - Highlights: • Magnetoresistance was first used to probe the ground state and ZEB in Ni-Mn-based alloys. • A pure spin-glass ground state is proposed in Mn{sub 50}Ni{sub 41}Sn{sub 9} ribbon. • Field-induced nucleation and growth of ferromagnetic domains in SG results in ZEB.
Melting of Domain Wall in Charge Ordered Dirac Electron of Organic Conductor α-(BEDT-TTF)2I3
Ohki, Daigo; Matsuno, Genki; Omori, Yukiko; Kobayashi, Akito
2018-05-01
The origin of charge order melting is identified by using the real space dependent mean-field theory in the extended Hubbard model describing an organic Dirac electron system α-(BEDT-TTF)2I3. In this model, the width of a domain wall which arises between different types of the charge ordered phase exhibits a divergent increase with decreasing the strength of electron-electron correlations. By analyzing the finite-size effect carefully, it is shown that the divergence coincides with a topological transition where a pair of Dirac cones merges in keeping with a finite gap. It is also clarified that the gap opening point and the topological transition point are different, which leads to the existence of an exotic massive Dirac electron phase with melted-type domain wall and gapless edge states. The present result also indicated that multiple metastable states are emerged in massive Dirac Electron phase. In the trivial charge ordered phase, the gapless domain-wall bound state takes place instead of the gapless edge states, accompanying with a form change of the domain wall from melted-type into hyperbolic-tangent-type.
Resistivity dependence of magnetoresistance in Co/ZnO films.
Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong
2014-01-06
We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.
Optical spin-transfer-torque-driven domain-wall motion in a ferromagnetic semiconductor
Czech Academy of Sciences Publication Activity Database
Ramsay, A.J.; Roy, P.E.; Haigh, J.A.; Otxoa, R.M.; Irvine, A.C.; Janda, T.; Campion, R. P.; Gallagher, B. L.; Wunderlich, Joerg
2015-01-01
Roč. 114, č. 6 (2015), "067202-1"-"067202-5" ISSN 0031-9007 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : magnetic domain walls * magneto-optics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.645, year: 2015
Domain walls in (Ga,Mn)As diluted magnetic semiconductor
Czech Academy of Sciences Publication Activity Database
Sugawara, A.; Kasai, H.; Tonomura, A.; Brown, P.D.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Zemen, Jan; Jungwirth, Tomáš
2008-01-01
Roč. 100, č. 4 (2008), 047202/1-047202/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute ferromagnetic semiconductor * Néel domain walls * electron holography * Landau-Lifshitz-Gilbert simulation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008
Crossover from quantum tunneling to classical hopping of domain walls in ferromagnets
Zhou, Bin; Liang, Jiu-Qing; Pu, Fu-Cho
2001-09-01
In the model of quantum tunneling of domain walls in ferromagnets given by Chudnovsky et al., the crossover from quantum tunneling to classical hopping is investigated. Considering the periodical boundary condition of spatial coordinate, the type of transition depends critically on the length of ferromagnet along the Y-axis.
The corkscrew instability of a Freedericksz domain wall in a nematic liquid crystal
Munoz, A D L; Müller, M; Schoepf, W; Rehberg, I
2003-01-01
A liquid crystal with slightly positive dielectric anisotropy is investigated in the planar configuration. This system allows for competition between electroconvection and the homogeneous Freedericksz transition, leading to a rather complicated bifurcation scenario. We report measurements of a novel instability leading to the 'corkscrew' pattern. This state is closely connected to the Freedericksz state as it manifests itself as a regular modulation along a Freedericksz domain wall, although its frequency dependence indicates that electroconvection must play a crucial role. It can be understood in terms of a pitchfork bifurcation from a straight domain wall. Quantitative characterization is performed in terms of amplitude, wavelength and relaxation time. Its wavelength is of the order of the probe thickness, while its ondulation amplitude is an order of magnitude smaller. The relaxation time is comparable to the one obtained for electroconvection.
International Nuclear Information System (INIS)
Herrera Diez, L.; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.
2015-01-01
This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He + ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H −1∕4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H dep . In turn, H* ≈ H dep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion
Plane symmetric cosmological model with thick domain walls in Brans-Dicke theory of gravitation
International Nuclear Information System (INIS)
Pawar, D.; Bayaskar, S.; Patil, V.
2009-01-01
We have investigated plane symmetric cosmological model in presence of thick domain walls in Brans-Dicke theory of gravitation, some geometrical and physical behavior of the model are discussed. (authors)
Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.
Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S
2015-09-01
We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.
Time-resolved magnetization dynamics of cross-tie domain walls in permalloy microstructures
International Nuclear Information System (INIS)
Miguel, J; Kurde, J; Piantek, M; Kuch, W; Sanchez-Barriga, J; Heitkamp, B; Kronast, F; Duerr, H A; Bayer, D; Aeschlimann, M
2009-01-01
We report on a picosecond time-resolved x-ray magnetic circular dichroic-photoelectron emission microscopy study of the evolution of the magnetization components of a microstructured permalloy platelet comprising three cross-tie domain walls. A laser-excited photoswitch has been used to apply a triangular 80 Oe, 160 ps magnetic pulse. Micromagnetic calculations agree well with the experimental results, both in time and frequency, illustrating the large angle precession in the magnetic domains with magnetization perpendicular to the applied pulse, and showing how the magnetic vortices revert their core magnetization while the antivortices remain unaffected.
Time-resolved magnetization dynamics of cross-tie domain walls in permalloy microstructures
Energy Technology Data Exchange (ETDEWEB)
Miguel, J; Kurde, J; Piantek, M; Kuch, W [Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin (Germany); Sanchez-Barriga, J; Heitkamp, B; Kronast, F; Duerr, H A [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, D-12489 Berlin (Germany); Bayer, D; Aeschlimann, M, E-mail: jorge.miguel@fu-berlin.d [Fachbereich Physik, Universitaet Kaiserslautern, Erwin-Schroedinger Strasse 46, D-67663 Kaiserslautern (Germany)
2009-12-02
We report on a picosecond time-resolved x-ray magnetic circular dichroic-photoelectron emission microscopy study of the evolution of the magnetization components of a microstructured permalloy platelet comprising three cross-tie domain walls. A laser-excited photoswitch has been used to apply a triangular 80 Oe, 160 ps magnetic pulse. Micromagnetic calculations agree well with the experimental results, both in time and frequency, illustrating the large angle precession in the magnetic domains with magnetization perpendicular to the applied pulse, and showing how the magnetic vortices revert their core magnetization while the antivortices remain unaffected.
Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.
Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing
2015-12-09
Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.
Higher dimensional curved domain walls on Kähler surfaces
Energy Technology Data Exchange (ETDEWEB)
Akbar, Fiki T., E-mail: ftakbar@fi.itb.ac.id [Theoretical Physics Laboratory, Theoretical High Energy Physics and Instrumentation Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha no. 10 Bandung, 40132 (Indonesia); Gunara, Bobby E., E-mail: bobby@fi.itb.ac.id [Theoretical Physics Laboratory, Theoretical High Energy Physics and Instrumentation Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha no. 10 Bandung, 40132 (Indonesia); Radjabaycolle, Flinn C. [Theoretical Physics Laboratory, Theoretical High Energy Physics and Instrumentation Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha no. 10 Bandung, 40132 (Indonesia); Departement of Physics, Faculty of Mathematics and Natural Sciences, Cendrawasih University, Jl. Kampwolker Kampus Uncen Baru Waena-Jayapura 99351 (Indonesia); Wijaya, Rio N. [Theoretical Physics Laboratory, Theoretical High Energy Physics and Instrumentation Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha no. 10 Bandung, 40132 (Indonesia)
2017-03-15
In this paper we study some aspects of curved BPS-like domain walls in higher dimensional gravity theory coupled to scalars where the scalars span a complex Kähler surface with scalar potential turned on. Assuming that a fake superpotential has a special form which depends on Kähler potential and a holomorphic function, we prove that BPS-like equations have a local unique solution. Then, we analyze the vacuum structure of the theory including their stability using dynamical system and their existence in ultraviolet-infrared regions using renormalization group flow.
Geometric Control Over the Motion of Magnetic Domain Walls
International Nuclear Information System (INIS)
N.A. Sinitsyn; V.V. Dobrovitski; S. urazhdin; Avadh Saxena
2008-01-01
We propose a method that enables a precise control of magnetic patterns and relies only on the fundamental properties of the wire as well as on the choice of the path in the controlled parameter space but not on the rate of motion along this path. Possible experimental realizations of this mechanism are discussed. In particular, we show that the domain walls in magnetic nanowires can be translated by rotation of the magnetic easy axis or by applying pulses of magnetic field directed transverse to the magnetic easy axis
Higher dimensional curved domain walls on Kähler surfaces
International Nuclear Information System (INIS)
Akbar, Fiki T.; Gunara, Bobby E.; Radjabaycolle, Flinn C.; Wijaya, Rio N.
2017-01-01
In this paper we study some aspects of curved BPS-like domain walls in higher dimensional gravity theory coupled to scalars where the scalars span a complex Kähler surface with scalar potential turned on. Assuming that a fake superpotential has a special form which depends on Kähler potential and a holomorphic function, we prove that BPS-like equations have a local unique solution. Then, we analyze the vacuum structure of the theory including their stability using dynamical system and their existence in ultraviolet-infrared regions using renormalization group flow.
International Nuclear Information System (INIS)
Wyslocki, J.J.; Suski, W.; Wochowski, K.
1994-01-01
Magnetic domain structures in the UFe 8 Ni 2 Si 2 and UFe 6 Ni 4 Si 2 compounds were studied using the powder pattern method. The domain structure observed is typical for uniaxial materials. The domain-wall energy density γ was determined from the average surface domain width D s observed on surfaces perpendicular to the easy axis as equal to 16 erg/cm 2 for UFe 8 Ni 2 Si 2 and 10 erg/cm 2 for UFe 6 Ni 4 Si 2 . Moreover, the critical diameter for single domain particle D c was calculated for the studied compounds
Quark matter coupled to domain walls in Bianchi types II, VIII and IX ...
Indian Academy of Sciences (India)
In this study of Bianchi types II, VIII and IX Universes, quark matter coupled to domain walls in the ... The self-bound state appears to be at ρ ... The observations suggest that the Hubble expansion of the Universe ... Taking motivation from.
Domain wall motion in magnetically frustrated nanorings
Lubarda, M. V.; Escobar, M. A.; Li, S.; Chang, R.; Fullerton, E. E.; Lomakin, V.
2012-06-01
We describe a magnetically frustrated nanoring (MFNR) configuration which is formed by introducing antiferromagnetic coupling across an interface orthogonal to the ring's circumferential direction. Such structures have the unique characteristic that only one itinerant domain wall (DW) can exist in the ring, which does not need to be nucleated or injected into the structure and can never escape making it analogous to a magnetic Möbius strip. Numerical simulations show that the DW in a MFNR can be driven consecutively around the ring with a prescribed cyclicity, and that the frequency of revolutions can be controlled by the applied field. The energy landscapes can be controlled to be flat allowing for low fields of operation or to have a barrier for thermal stability. Potential logic and memory applications of MFNRs are considered and discussed.
Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.
Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo
2015-09-21
Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.
Systematic study of doping dependence on linear magnetoresistance in p-PbTe
International Nuclear Information System (INIS)
Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.
2014-01-01
We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF 2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF 2 doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.
Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$
Wang, Kefeng; Petrovic, C.
2016-01-01
We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...
Interconnected magnetic tunnel junctions for spin-logic applications
Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.
2018-05-01
With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.
Domain wall motions in perpendicularly magnetized CoFe/Pd multilayer nanowire
DEFF Research Database (Denmark)
Meng, Zhaoliang; Kumar, Manoj; Qiu, Jinjun
2014-01-01
Current-induced domain wall (DW) motion is investigated in a 600nm wide nanowire using multilayer film with a structure of Ta(5nm)/Pd(5nm)/[CoFe(0.4nm)/Pd(1.2nm)]15/Ta(5nm) in terms of anomalous Hall effect measurements. It is found that motion of DWs can be driven by a current density as low as 1...
Magnetoresistance anomaly in DyFeCo thin films
International Nuclear Information System (INIS)
Wu, J. C.; Wu, C. S.; Wu, Te-ho; Chen, Bing-Mau; Shieh, Han-Ping D.
2001-01-01
Microstructured rare-earth - transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. [copyright] 2001 American Institute of Physics
Spin-flip induced magnetoresistance in positionally disordered organic solids.
Harmon, N J; Flatté, M E
2012-05-04
A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.
Damjanovic, D
1997-01-01
The contribution from the irreversible displacement of non-180 deg domain walls to the direct longitudinal piezoelectric d sub 3 sub 3 coefficient of BaTiO sub 3 and Pb(Zr, Ti)O sub 3 ceramics was determined quantitatively by using the Rayleigh law. Effects of the crystal structure and microstructure of the ceramics as well as the external d.c. pressure on the domain wall contribution to d sub 3 sub 3 were examined. In barium titanate, this domain wall contribution is large (up to 35% of the total d sub 3 sub 3 , under the experimental conditions used) and dependent on the external d.c. pressure in coarse grained ceramics, and much smaller and independent of the external d.c. pressure in fine-grained samples. The presence of internal stresses in fine-grained ceramics could account for the observed behaviour. The analysis shows that the domain-wall contribution to the d sub 3 sub 3 in lead zirconate titanate ceramics is large in compositions close to the morphotropic phase boundary that contain a mixture of te...
Energy Technology Data Exchange (ETDEWEB)
Herrera Diez, L., E-mail: liza.herrera-diez@ief.u-psud.fr; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D. [Institut d' Electronique Fondamentale, Université Paris-Sud, UMR CNRS 8622, 91405 Orsay (France); Lamperti, A.; Mantovan, R. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate (MB) (Italy); Ocker, B. [Singulus Technology AG, Hanauer Landstrasse 103, 63796 Kahl am Main (Germany)
2015-07-20
This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.
Magnetoresistive multilayers deposited on the AAO membranes
International Nuclear Information System (INIS)
Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.
2005-01-01
Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si
New type magnetoresistance in Co/Si systems
International Nuclear Information System (INIS)
Honda, S.; Ishikawa, T.; Takai, K.; Mitarai, Y.; Harada, H.
2005-01-01
The magnetoresistance (MR) properties in both the sputter-deposited Co/Si multilayers and the system consisting of Co evaporated on the anodized Si have been examined. In the Co/Si multilayers, at room temperature both the sharp ordinary magnetoresistance (OMR) and the negative granular-type giant magnetoresistance (GMR) appear, while at low temperatures only the large OMR of about 3.5% is observed for in-plane field. In the Co/anodized-Si system, at room temperature the MR is negligibly small, while it increases steeply with decreasing temperature and very large OMR of about 22% is obtained at 110 K for perpendicular field
Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors
Harmon, N. J.; Flatté, M. E.
2012-02-01
A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their line shapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.
Quark matter coupled to domain walls in Bianchi types II, VIII and IX ...
Indian Academy of Sciences (India)
In this study of Bianchi types II, VIII and IX Universes, quark matter coupled to domain walls in the context of general relativity are explored. To obtain deterministic solution of the Einstein's field equations, various techniques are adopted. The features of the obtained solution are discussed.
Depinning of the ferroelectric domain wall in congruent LiNbO{sub 3}
Energy Technology Data Exchange (ETDEWEB)
Lee, Donghwa, E-mail: donghwa96@jnu.ac.kr [School of Materials Science and Engineering, Chonnam National University, Gwangju 61186 (Korea, Republic of); Gopalan, Venkatraman [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Phillpot, Simon R. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2016-08-22
The high coercive field, E{sub c}, of congruent LiNbO{sub 3} can be reduced by doping with Mg or Zn atoms, or by increasing the temperature above a threshold value. The physical origin for this reduction is not currently understood. Here, density functional theory calculations illustrate the atomic origin of the change in the switching field of the congruent LiNbO{sub 3}. They show that the high E{sub c} in the congruent LiNbO{sub 3} is a result of niobium antisite atoms on the lithium sublattice, pinning the motion of the domain walls. Thus, the healing of antisites by diffusion can significantly reduce the coercive field. In addition, this work demonstrates that the migration of these niobium antisites can be enhanced by doping or by changing the temperature. Thus, the depinning process of the congruent LiNbO{sub 3} is understood by the migration of the niobium antisite defect across the domain wall.
Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K
2017-06-05
In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.
The magnetoresistivity of some rare-earth metals
International Nuclear Information System (INIS)
Webber, G.D.
1978-10-01
The thesis describes measurements of the low temperature transverse magnetoresistivities of single crystals of rare-earth metals in magnetic fields up to 8 Tesla. A general introduction to the rare-earths, their magnetic properties and a review of the basic theory and mechanism of magnetoresistivity is given. Details of the crystal structure, growth of single crystals and sample mounting method follow. The experimental equipment and measuring techniques are then described. The low temperature transverse magnetoresistivity of polycrystalline lanthanum and single crystal praseodymium for the temperature range 4.2 - 30K is measured. The separation of the spin-disorder and Fermi-surface orbital effect contributions are described and the theoretical and experimental spin-disorder values compared. Magnetoresistivity measurements for neodymium single crystals (4.2 - 30K) are compared with the magnetic properties determined from neutron diffraction studies. Results for gadolinium single crystals (4.2 - 200K) are compared for two different impurity levels and with previous work. (UK)
Samaraweera, R. L.; Liu, H.-C.; Wang, Z.; Reichl, C.; Wegscheider, W.; Mani, R. G.
2017-01-01
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the obs...
International Nuclear Information System (INIS)
Sun, H.Y.; Hu, H.N.; Sun, Y.P.; Nie, X.F.
2004-01-01
Influence of rotating in-plane field on vertical Bloch lines in the walls of second kind of dumbbell domains (IIDs) was investigated, and a critical in-plane field range [H ip 1 ,H ip 2 ] of which vertical-Bloch lines (VBLs) annihilated in IIDs is found under rotating in-plane field (H ip 1 is the maximal critical in-plane-field of which hard domains remain stable, H ip 2 is the minimal critical in-plane-field of which all of the hard domains convert to soft bubbles (SBs, without VBLs)). It shows that the in-plane field range [H ip 1 , H ip 2 ] changes with the change of the rotating angle Δφ H ip 1 maintains stable, while H ip 2 decreases with the decreasing of rotating angle Δφ. Comparing it with the spontaneous shrinking experiment of IIDs under both bias field and in-plane field, we presume that under the application of in-plane field there exists a direction along which the VBLs in the domain walls annihilate most easily, and it is in the direction that domain walls are perpendicular to the in-plane field
Magnetoresistance in molybdenite (MoS2) crystals
International Nuclear Information System (INIS)
Chakraborty, B.R.; Dutta, A.K.
1975-01-01
The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)
Domain wall oscillation in magnetic nanowire with a geometrically confined region
Sbiaa, R.; Bahri, M. Al; Piramanayagam, S. N.
2018-06-01
In conventional magnetic devices such as magnetic tunnel junctions, a steady oscillation of a soft layer magnetization could find its application in various electronic systems. However, these devices suffer from their low output signal and large spectral linewidth. A more elegant scheme based on domain wall oscillation could be a solution to these issues if DW dynamics could be controlled precisely in space and time. In fact, in DW devices, the magnetic configuration of domain wall and its position are strongly dependent on the device geometry and material properties. Here we show that in a constricted device with judiciously adjusted dimensions, a DW can be trapped within the central part and keep oscillating with a single frequency f. For 200 nm by 40 nm nanowire, f was found to vary from 2 GHz to 3 GHz for a current density between 4.8 × 1012 A/m2 and 5.6 × 1012 A/m2. More interestingly, the device fabrication is simply based on two long nanowires connected by adjusting the offset in both x and y directions. This new type of devices enables the conversion of dc-current to an ac-voltage in a controllable manner opening thus the possibility of a new nano-oscillators with better performance.
Energy Technology Data Exchange (ETDEWEB)
Fujita, T. C.; Uchida, M., E-mail: uchida@ap.t.u-tokyo.ac.jp; Kozuka, Y.; Ogawa, S. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Arima, T. [Department of Advanced Materials Science, University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)
2016-01-11
Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu{sub 2}Ir{sub 2}O{sub 7} single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit linear MR but with opposite signs, which enables us to estimate the ratio of the two domains in the patterned channel. The linear MR for 80 × 60 μm{sup 2} channel is nearly zero after zero-field cooling, suggesting random distribution of domains smaller than the channel size. In contrast, the wide distribution of the value of the linear MR is detected in 2 × 2 μm{sup 2} channel, reflecting the detectable domain size depending on each cooling-cycle. Compared to simulation results, we estimate the average size of a single all-in-all-out magnetic domain as 1–2 μm.
Fabrication and physical properties of permalloy nano-size wires
International Nuclear Information System (INIS)
Yu, C.; Lee, S.F.; Yao, Y.D.; Wong, M.S.; Huang, E.W.; Ma, Y.-R.; Tsai, J.L.; Chang, C.R.
2003-01-01
Nano-size NiFe wires with patterned shapes in half-ring-in-series, octagon-in-series, and zigzag-in-series configurations were fabricated. Their magnetoresistance was studied below room temperature and their magnetic domain images were investigated at room temperature by a magnetic force microscope. In general, we have experimentally demonstrated that the variation of the magnetoresistance of our patterned nano-size wires can be related to different domain configurations and explained by the domain switching effect. The number of magnetic domain walls in our patterned wires can be controlled by the shape anisotropy and the size of each section of patterns that form the wires
Spin Hall magnetoresistance at high temperatures
International Nuclear Information System (INIS)
Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji
2015-01-01
The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface
Vortices and domain walls: 'Wormholes' in unconventional superconductors
International Nuclear Information System (INIS)
Bessarab, P F; Radievsky, A V
2010-01-01
In the framework of the 2D and 3D time-dependent Ginzburg-Landau model we study superconductors with multicomponent order parameter (d-pairing). We argue that topological defects inside the sample do affect its thermodynamic properties such as hysteresis loop, susceptibility, etc. Along with earlier known topological defects such as Abrikosov vortices, domain walls (DWs) which separate different magnetic phases and even vortices inside the DW, we found an interesting combination of DWs and vortices. Namely we show that equivalent magnetic phases may be linked together with a vortex going through the other magnetic phase. This configuration may correspond to a stable state even in a zero external magnetic field. We also mention that this configuration is topologically similar to the 'wormholes' in the quantum gravity.
Gravitational domain walls and the dynamics of the gravitational constant G
Bunster, Claudio; Gomberoff, Andrés
2017-07-01
From the point of view of elementary particle physics, the gravitational constant G is extraordinarily small. This has led to asking whether it could have decayed to its present value from an initial one commensurate with microscopical units. A mechanism that leads to such a decay is proposed herein. It is based on assuming that G may take different values within regions of the universe separated by a novel kind of domain wall, a "G -wall." The idea is implemented by introducing a gauge potential Aμ ν ρ, and its conjugate D , which determines the value of G as an integration constant rather than a fundamental constant. The value of G jumps when one goes through a G -wall. The procedure extends one previously developed for the cosmological constant, but the generalization is far from straightforward: (i) The intrinsic geometry of a G -wall is not the same as seen from its two sides because the second law of black hole thermodynamics mandates that the jump in G must cause a discontinuity in the scale of length. (ii) The size of the decay step in G is controlled by a function G (D ) which may be chosen so as to diminish the value of G towards the asymptote G =0 . It is shown that: (i) The dynamics of the gravitational field with G treated as a dynamical variable, coupled to G -walls and matter, follows from an action principle, which is given. (ii) A particle that impinges on a G -wall may be refracted or reflected. (iii) The various forces between two particles change when a G -wall is inserted in between them. (iv) G -walls may be nucleated trough tunneling and thermal effects, whose semiclassical probabilities are evaluated. (v) If the action principle is constructed properly, the entropy of a black hole increases when the value of the gravitational constant is changed through the absorption of a G-wall by the hole.
High antiferromagnetic domain wall velocity induced by Néel spin-orbit torques
Czech Academy of Sciences Publication Activity Database
Gomonay, O.; Jungwirth, Tomáš; Sinova, Jairo
2016-01-01
Roč. 117, č. 1 (2016), 1-5, č. článku 017202. ISSN 0031-9007 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * domain walls * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 8.462, year: 2016
Magnetoresistance effect in a both magnetically and electrically modulated nanostructure
International Nuclear Information System (INIS)
Lu, Mao-Wang; Yang, Guo-Jian
2007-01-01
We propose a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems, and this system may be used as a voltage-tunable magnetoresistance device
Epitaxial Ni films, e-beam nano-patterning and BMR
Lukaszew, R. Alejandra; Zhang, Zhengdong; Pearson, Dave; Zambano, Antonio
2004-05-01
We have attempted to clarify possible domain-wall processes present in the recently reported large ballistic magnetoresistance effects in nano-contacts. To that effect we have used e-beam lithography applied to epitaxial Ni films to fabricate nano-bridges in more controlled geometry than electrochemical deposition. Our preliminary results indicate that magnetic domains do play a role in the magneto-resistance of these nano-bridges but the order of magnitude of the observed effect is considerably smaller than the reported observations in electrochemically prepared nano-contacts.
Epitaxial Ni films, e-beam nano-patterning and BMR
International Nuclear Information System (INIS)
Lukaszew, R.A.; Zhang Zhengdong; Pearson, Dave; Zambano, Antonio
2004-01-01
We have attempted to clarify possible domain-wall processes present in the recently reported large ballistic magnetoresistance effects in nano-contacts. To that effect we have used e-beam lithography applied to epitaxial Ni films to fabricate nano-bridges in more controlled geometry than electrochemical deposition. Our preliminary results indicate that magnetic domains do play a role in the magneto-resistance of these nano-bridges but the order of magnitude of the observed effect is considerably smaller than the reported observations in electrochemically prepared nano-contacts
Chirality correlation within Dirac eigenvectors from domain wall fermions
International Nuclear Information System (INIS)
Blum, T.; Christ, N.; Cristian, C.; Liao, X.; Liu, G.; Mawhinney, R.; Wu, L.; Zhestkov, Y.; Dawson, C.
2002-01-01
In the dilute instanton gas model of the QCD vacuum, one expects a strong spatial correlation between chirality and the maxima of the Dirac eigenvectors with small eigenvalues. Following Horvath et al. we examine this question using lattice gauge theory within the quenched approximation. We extend the work of those authors by using weaker coupling, β=6.0, larger lattices, 16 4 , and an improved fermion formulation, domain wall fermions. In contrast with this earlier work, we find a striking correlation between the magnitudes of the chirality density, |ψ † (x)γ 5 ψ(x)|, and the normal density, ψ † (x)ψ(x), for the low-lying Dirac eigenvectors
Domain walls and exchange-interaction in Permalloy/Gd films
International Nuclear Information System (INIS)
Ranchal, R; Aroca, C; Lopez, E
2008-01-01
In this work we study the exchange coupling in Permalloy (Py)/gadolinium (Gd) bilayers. The exchange-coupled Py/Gd system is very temperature dependent and moreover the magnetization process in the Py layer is mainly due to domain wall (DW) displacements which are strongly controlled by pinning effects. We propose that this pinning could be caused by magnetostatic and exchange interactions between Py DWs and the magnetostrictive Gd layer. These effects mask the antiferromagnetic coupling between layers and, depending on temperature and Py thicknesses, apparent ferromagnetic coupling occurs. The study has been performed in the 80-300 K temperature range for different Py layer thicknesses and different Py induced anisotropies
Domain walls and perturbation theory in high-temperature gauge theory: SU(2) in 2+1 dimensions
International Nuclear Information System (INIS)
Korthals Altes, C.; Michels, A.; Teper, M.; Stephanov, M.
1997-01-01
We study the detailed properties of Z 2 domain walls in the deconfined high-temperature phase of the d=2+1 SU(2) gauge theory. These walls are studied both by computer simulations of the lattice theory and by one-loop perturbative calculations. The latter are carried out both in the continuum and on the lattice. We find that leading order perturbation theory reproduces the detailed properties of these domain walls remarkably accurately even at temperatures where the effective dimensionless expansion parameter g 2 /T is close to unity. The quantities studied include the surface tension, the action density profiles, roughening, and the electric screening mass. It is only for the last quantity that we find an exception to the precocious success of perturbation theory. All this shows that, despite the presence of infrared divergences at higher orders, high-T perturbation theory can be an accurate calculational tool. copyright 1997 The American Physical Society
Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.
Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng
2016-11-23
Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.
The Kaon B-parameter from Two-Flavour Dynamical Domain Wall Fermions
International Nuclear Information System (INIS)
Dawson, C.
2005-01-01
We report on the calculation of the kaon B-parameter using two dynamical flavours of domain wall fermions. Our analysis is based on three ensembles of configurations, each consisting of about 5,000 HMC trajectories, with a lattice spacing of approximately 1.7 GeV for 16 3 x32 lattices; dynamical quark masses range from approximately the strange quark mass to half of that. Both degenerate and non-degenerate quark masses are used for the kaons
On the equilibrium configuration of the Kittel type domain structure with Bloch walls, l80deg
International Nuclear Information System (INIS)
Gavrila, H.
1975-01-01
Using a phenomenologic method for appreciating different components of the free energy, the equilibrium configuration of the Kittel-type domain structure with Bloch walls is obtained. By improving the known methods, more accurate magnetostatic energy calculations are reported. In order to determine the equilibrium structure, the total free energy is minimized with respect to two system parameters: the Bloch wall width and the structure half-period. (author)
The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors
International Nuclear Information System (INIS)
Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang
2012-01-01
We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Parkin, Stuart
2012-02-01
Racetrack Memory is a novel high-performance, non-volatile storage-class memory in which magnetic domains are used to store information in a ``magnetic racetrack'' [1]. The magnetic racetrack promises a solid state memory with storage capacities and cost rivaling that of magnetic disk drives but with much improved performance and reliability: a ``hard disk on a chip''. The magnetic racetrack is comprised of a magnetic nanowire in which a series of magnetic domain walls are shifted to and fro along the wire using nanosecond-long pulses of spin polarized current [2]. We have demonstrated the underlying physics that makes Racetrack Memory possible [3,4] and all the basic functions - creation, and manipulation of a train of domain walls and their detection. The physics underlying the current induced dynamics of domain walls will also be discussed. In particular, we show that the domain walls respond as if they have mass, leading to significant inertial driven motion of the domain walls over long times after the current pulses are switched off [3]. We also demonstrate that in perpendicularly magnetized nanowires there are two independent current driving mechanisms: one derived from bulk spin-dependent scattering that drives the domain walls in the direction of electron flow, and a second interfacial mechanism that can drive the domain walls either along or against the electron flow, depending on subtle changes in the nanowire structure. Finally, we demonstrate thermally induced spin currents are large enough that they can be used to manipulate domain walls. [4pt] [1] S.S.P. Parkin, US Patent 6,834,005 (2004); S.S.P. Parkin et al., Science 320, 190 (2008); S.S.P. Parkin, Scientific American (June 2009). [0pt] [2] M. Hayashi, L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 320, 209 (2008). [0pt] [3] L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 330, 1810 (2010). [0pt] [4] X. Jiang et al. Nat. Comm. 1:25 (2010) and Nano Lett. 11, 96 (2011).
Effect of quantum tunneling on spin Hall magnetoresistance.
Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk
2017-02-22
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.
Temperature dependence of magnetoresistance in lanthanum manganite ceramics
International Nuclear Information System (INIS)
Gubkin, M.K.; Zalesskii, A.V.; Perekalina, T.M.
1996-01-01
Magnetoresistivity in the La0.9Na0.1Mn0.9(V,Co)0.1O3 and LaMnO3+δ ceramics was studied. The temperature dependence of magnetoresistance in these specimens was found to differ qualitatively from that in the La0.9Na0.1MnO3 single crystal (the magnetoresistance value remains rather high throughout the measurement range below the Curie temperature), with the maximum values being about the same (20-40% in the field of 20 kOe). Previously published data on magnetization, high frequency magnetic susceptibility, and local fields at the 139La nuclei of the specimens with similar properties attest to their magnetic inhomogeneity. The computation of the conductivity of the nonuniformly ordered lanthanum manganite was performed according to the mean field theory. The calculation results allow one to interpret qualitatively various types of experimental temperature dependences of magnetoresistance
Czech Academy of Sciences Publication Activity Database
Ondrejkovič, Petr; Márton, Pavel; Guennou, Mael; Setter, N.; Hlinka, Jiří
2013-01-01
Roč. 88, č. 2 (2013), "024114-1"-"024114-9" ISSN 1098-0121 Grant - others:7th Framework Programme(XE) 268058 Institutional support: RVO:68378271 Keywords : piezoelectric properties * charged domain walls * domain structure * twinned ferroelectric Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.664, year: 2013 http://link. aps .org/doi/10.1103/PhysRevB.88.024114
Investigation of domain walls in PPLN by confocal raman microscopy and PCA analysis
Shur, Vladimir Ya.; Zelenovskiy, Pavel; Bourson, Patrice
2017-07-01
Confocal Raman microscopy (CRM) is a powerful tool for investigation of ferroelectric domains. Mechanical stresses and electric fields existed in the vicinity of neutral and charged domain walls modify frequency, intensity and width of spectral lines [1], thus allowing to visualize micro- and nanodomain structures both at the surface and in the bulk of the crystal [2,3]. Stresses and fields are naturally coupled in ferroelectrics due to inverse piezoelectric effect and hardly can be separated in Raman spectra. PCA is a powerful statistical method for analysis of large data matrix providing a set of orthogonal variables, called principal components (PCs). PCA is widely used for classification of experimental data, for example, in crystallization experiments, for detection of small amounts of components in solid mixtures etc. [4,5]. In Raman spectroscopy PCA was applied for analysis of phase transitions and provided critical pressure with good accuracy [6]. In the present work we for the first time applied Principal Component Analysis (PCA) method for analysis of Raman spectra measured in periodically poled lithium niobate (PPLN). We found that principal components demonstrate different sensitivity to mechanical stresses and electric fields in the vicinity of the domain walls. This allowed us to separately visualize spatial distribution of fields and electric fields at the surface and in the bulk of PPLN.
Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.
Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V
2012-05-04
In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.
Lloyd-Hughes, J; Mosley, C D W; Jones, S P P; Lees, M R; Chen, A; Jia, Q X; Choi, E-M; MacManus-Driscoll, J L
2017-04-12
Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7 Sr 0.3 MnO 3 . At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.
Optimized cobalt nanowires for domain wall manipulation imaged by in situ Lorentz microscopy
International Nuclear Information System (INIS)
Rodríguez, L. A.; Magén, C.; Snoeck, E.; Gatel, C.; Serrano-Ramón, L.
2013-01-01
Direct observation of domain wall (DW) nucleation and propagation in focused electron beam induced deposited Co nanowires as a function of their dimensions was carried out by Lorentz microscopy (LTEM) upon in situ application of magnetic field. Optimal dimensions favoring the unambiguous DW nucleation/propagation required for applications were found in 500-nm-wide and 13-nm-thick Co nanowires, with a maximum nucleation field and the largest gap between nucleation and propagation fields. The internal DW structures were resolved using the transport-of-intensity equation formalism in LTEM images and showed that the optimal nanowire dimensions correspond to the crossover between the nucleation of transverse and vortex walls.
Colossal magnetoresistance in manganites and related prototype devices
International Nuclear Information System (INIS)
Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang
2013-01-01
We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO 3 p—n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. (topical review - magnetism, magnetic materials, and interdisciplinary research)
Large magnetoresistance in La-Ca-Mn-O films
International Nuclear Information System (INIS)
Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.
1995-01-01
A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films
Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing
2018-02-01
Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.
Energy Technology Data Exchange (ETDEWEB)
Heinen, Jan; Boulle, Olivier; Rousseau, Kevin; Malinowski, Gregory; Klaeui, Mathias [Universitaet Konstanz, Fachbereich Physik, D-78457 Konstanz (Germany); Swagton, Henk J.; Koopmans, Bert [Eindhoven University of Technology, Department of Applied Physics, MB 5600 (Netherlands); Ulysse, Christian; Faini, Giancarlo [CNRS, Phynano team, Laboratoire de Photonique et de Nanostructures, 91460 Marcoussis (France)
2010-07-01
We report on magnetotransport studies on perpendicularly magnetized nanowires with narrow domain wall (DW) structures. Using Co/Pt multilayer nanowires, we have previously shown that Joule heating is concealing most of the current induced domain wall effects, but using a constant sample temperature a large non-adiabacity factor {beta} has been deduced. Here, we carry out experiments for both applied field directions and current polarities, starting from different DW configurations within a Hall cross. We clearly show, using the different symmetries of spin torque and Oersted-field, that the much debated Oersted-field does not contribute to the DW depinning significantly. This allows us to extract the spin torque contribution and the non-adiabacity factor {beta}, which turns out to be in line with previous measurements.
Chiral damping of magnetic domain walls
Jué, Emilie
2015-12-21
Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics1, current-induced spin–orbit torques2, 3, 4, 5, 6, 7 and some topological magnetic structures8, 9, 10, 11, 12. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii–Moriya interaction (DMI) exhibit identical spatial symmetry13, 14, 15, 16, 17, 18, 19. However, both scenarios are differentiated by their time reversal properties: whereas DMI is a conservative effect that can be modelled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing one to distinguish the physical mechanism. The chiral damping enriches the spectrum of physical phenomena engendered by the SIA, and is essential for conceiving DW and skyrmion devices owing to its coexistence with DMI (ref. 20).
Chiral damping of magnetic domain walls
Jué , Emilie; Safeer, C. K.; Drouard, Marc; Lopez, Alexandre; Balint, Paul; Buda-Prejbeanu, Liliana; Boulle, Olivier; Auffret, Stephane; Schuhl, Alain; Manchon, Aurelien; Miron, Ioan Mihai; Gaudin, Gilles
2015-01-01
Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics1, current-induced spin–orbit torques2, 3, 4, 5, 6, 7 and some topological magnetic structures8, 9, 10, 11, 12. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii–Moriya interaction (DMI) exhibit identical spatial symmetry13, 14, 15, 16, 17, 18, 19. However, both scenarios are differentiated by their time reversal properties: whereas DMI is a conservative effect that can be modelled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing one to distinguish the physical mechanism. The chiral damping enriches the spectrum of physical phenomena engendered by the SIA, and is essential for conceiving DW and skyrmion devices owing to its coexistence with DMI (ref. 20).
Light induced kickoff of magnetic domain walls in Ising chains
Bogani, Lapo
2012-02-01
Controlling the speed at which systems evolve is a challenge shared by all disciplines, and otherwise unrelated areas use common theoretical frameworks towards this goal. A particularly widespread model is Glauber dynamics, which describes the time evolution of the Ising model and can be applied to any binary system. Here we show, using molecular nanowires under irradiation, that Glauber dynamics can be controlled by a novel domain-wall kickoff mechanism. Contrary to known processes, the kickoff has unambiguous fingerprints, slowing down the spin-flip attempt rate by several orders of magnitude, and following a scaling law. The required irradiation power is very low, a substantial improvement over present methods of magnetooptical switching: in our experimental demonstration we switched molecular nanowires with light, using powers thousands of times lower than in previous optical switching methods. This manipulation of stochastic dynamic processes is extremely clean, leading to fingerprint signatures and scaling laws. These observations can be used, in material science, to better study domain-wall displacements and solitons in discrete lattices. These results provide a new way to control and study stochastic dynamic processes. Being general for Glauber dynamics, they can be extended to different kinds of magnetic nanowires and to a myriad of fields, ranging from social evolution to neural networks and chemical reactivity. For nanoelectronics and molecular spintronics the kickoff affords external control of molecular spin-valves and a magnetic fingerprint in single molecule measurements. It can also be applied to the dynamics of mechanical switches and the related study of phasons and order-disorder transitions.
Role of spin polarized tunneling in magnetoresistance and low
Indian Academy of Sciences (India)
Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue
Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors
International Nuclear Information System (INIS)
Heine, G.
1999-05-01
Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 b . The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single crystals is interpreted as the suppression of the fluctuation-conductivity enhancement including orbital and spin contributions, whereas the negative magnetoresistance arises from the reduction of the fluctuation-induced pseudogap in the single-electron density-of-states by the magnetic field. For higher temperatures a transition to the normal-state magnetoresistance occurs for the in-plane transport. In the less anisotropic YBa2CU307 b thin films the positive out-of-plane magnetoresistance near T, changes sign to a negative magnetoresistance at higher temperatures. This behavior is also consistent with predictions from the theory of thermodynamic order-parameter fluctuations. The agreement of the fluctuation theory with the experimental findings is excellent for samples from the over doped side of the phase diagram, but deteriorate with decreasing carrier concentration. This behavior is interpreted by the dominating d-wave symmetry of the superconducting order
Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides
International Nuclear Information System (INIS)
Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.
2009-01-01
The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB 6 and NdB 6 ) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB 6 and NdB 6 compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-Δρ/ρ ∝ H 2 ), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB 6 and NdB 6 compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB 6 and NdB 6 , ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ loc has been estimated. It has been demonstrated that, in the temperature range T N loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ loc ∝ (T - Θ p ) -1 .
Magneto-elastic resonant phenomena at the motion of the domain wall in weak ferromagnets
International Nuclear Information System (INIS)
Kuz'menko, A.P.; Zhukov, E.A.; Dobromyslov, M.B.; Kaminsky, A.V.
2007-01-01
Dynamics of domain walls (DWs) in transparent thin orthoferrite samples with weak ferromagnetic ordering is investigated at sub- and supersonic velocities. A resonant increase of Lamb waves and the formation of magnetoelastic solitons under resonant conditions in both an elastic and between a spin and elastic subsystems were observed
Experimental detection of domain wall propagation above the Walker field
International Nuclear Information System (INIS)
Kondou, Kouta; Chiba, Daichi; Kobayashi, Kensuke; Ono, Teruo; Ohshima, Norikazu; Kasai, Shinya
2012-01-01
The domain wall (DW) velocity above the Walker field drops abruptly with increasing magnetic field, because of the so-called Walker breakdown, where the DW moves with a precessional mode. On applying the higher field, the DW velocity again starts to increase gradually. We report the DW propagation around this local minimum regime in detail, investigated through the time-resolved electrical detection technique, with a magnetic tunnel junction. Just above the Walker field, we succeeded in detecting the precessional motion of the DW in a real-time regime, while a different mode appeared around the local minimum of the DW velocity. (paper)
3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles
International Nuclear Information System (INIS)
Tan, Reasmey P.; Carrey, Julian; Respaud, Marc; Desvaux, Celine; Renaud, Philippe; Chaudret, Bruno
2008-01-01
We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed
Big magnetoresistance: magnetic polarons
International Nuclear Information System (INIS)
Teresa, J.M. de; Ibarra, M.R.
1997-01-01
By using several macro and microscopic experimental techniques we have given evidence for magnetoresistance in manganese oxides caused by the effect of the magnetic field on the magnetic polarons. (Author) 3 refs
Influence of temperature on the critical in-plane field range for VBLs in the walls of hard domains
International Nuclear Information System (INIS)
Nie, X.F.; Guo, G.X.; Xu, J.P.; Liu, S.P.; Wang, L.N.; Huo, S.G.
2006-01-01
The influence of temperature on the critical in-plane field range for vertical Bloch lines in the walls of three kinds of hard domains is investigated experimentally. It is found that for each kind of three hard domains, there exists a critical in-plane field range, i. e. [H ip (1) (T),H ip (2) (T)], which depends on temperatures and in which vertical Bloch lines are unstable. Here, H ip (1) (T) is the initial critical in-plane field where VBLs in the walls of three kinds of hard domains are annihilated, and H ip (2) (T) is the lowest in-plane field where VBLs in their corresponding hard domains are annihilated completely. H ip (1) (T), H ip (2) (T) and [H ip (1) (T),H ip (2) (T)], all decrease as the temperature increase. Furthermore, H ip (1) (T) and H ip (2) (T) reach zero at T 0 1 and T 0 , respectively. In addition, there exists a relationship among them, when T is unchanged, H ip (1) (T) of the three kinds of hard domains (ordinary hard bubbles (OHB), first kind of dumbbell domain (ID) and second kind of dumbbell domains (IID)) decrease successively, and theirH ip (2) (T) are the same
Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors
International Nuclear Information System (INIS)
Krivoruchko, V.N.
1996-01-01
The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity
RG domain wall for the general (su)-hat (2) coset models
Energy Technology Data Exchange (ETDEWEB)
Stanishkov, Marian [Institute for Nuclear Research and Nuclear Energy,Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria)
2016-08-16
We consider a RG flow in a general (su)-hat (2) coset model induced by the least relevant field. This is done using two different approaches. We first compute the mixing coefficients of certain fields in the UV and IR theories using a conformal perturbation theory. The necessary structure constants are computed. The same coefficients can be calculated using the RG domain wall construction of Gaiotto. We compute the corresponding one-point functions and show that the two approaches give the same result in the leading order.
Raut, Samarth S.; Liu, Peng; Finol, Ender A.
2015-01-01
In this work, we present a computationally efficient image-derived volume mesh generation approach for vasculatures that implements spatially varying patient-specific wall thickness with a novel inward extrusion of the wall surface mesh. Multi-domain vascular meshes with arbitrary numbers, locations, and patterns of both iliac bifurcations and thrombi can be obtained without the need to specify features or landmark points as input. In addition, the mesh output is coordinate-frame independent ...
Anisotropy of magnetoresistance on trapping magnetic fields in granular HTSC
Sukhanov, A A
2003-01-01
The features of magnetoresistance in Bi (Pb)-HTSC ceramics with the magnetic fields trapped are investigated. It is found that on trapping magnetic flux the magnetoresistance in granular HTSC becomes anisotropic. Moreover, for magnetic fields H parallel and currents perpendicular to field H sub i which induces the trapping the magnetoresistance field dependence DELTA R(H) is nonmonotonic and the magnetoresistance is negative for small fields H < Hinv. The effect of trapped field and transport current and their orientations on the dependence DELTA R(H) is investigated. In particular, it is found that the field of magnetoresistance sign inversion Hinv almost linearly grows with increase of the effective trapped magnetic fields. Hinv decreases down to zero as the angle between fields H and H sub i increases up to pi/2 and slightly decreases with increasing transport current. The results are treated in terms of the model of magnetic flux trapping in superconducting grains or 'loops' embedded in a matrix of wea...
Electrically tuned magnetic order and magnetoresistance in a topological insulator.
Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu
2014-09-15
The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.
Magnetoresistive waves in plasmas
International Nuclear Information System (INIS)
Felber, F.S.; Hunter, R.O. Jr.; Pereira, N.R.; Tajima, T.
1982-01-01
The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed
Fusion neutron effects on magnetoresistivity of copper stabilizer materials
International Nuclear Information System (INIS)
Guinan, M.W.; Van Konynenburg, R.A.
1983-01-01
Eight copper wires were repeatedly irradiated at 4.2 to 4.4 K with 14.8 MV neutrons and isochronally annealed at temperatures up to 34 0 C for a total of five cycles. Their electrical resistances were monitored during irradiation under zero applied magnetic field. After each irradiation the magnetoresistances were measured in applied transverse magnetic fields of up to 12 T. Then the samples were isochronally annealed to observe the recovery of the resistivity and magnetoresistivity. After each anneal at the highest temperature (34 0 C), some of the damage remained and contributed to the damage state observed following the subsequent irradiation. In this way, we were able to observe how the changes in magnetoresistance would accumulate during the repeated irradiations and anneals expected to be characteristic of fusion reactor magnets. For each succeeding irradiation the fluence was chosen to produce approximately the same final magnetoresistance at 12 T, taking account of the accumulating residual radiation damage. The increment of magnetoresistivity added by the irradiation varied from 35 to 65% at 12 T and from 50 to 90% at 8 T for the various samples
Quenched lattice QCD with domain wall fermions and the chiral limit
International Nuclear Information System (INIS)
Blum, T.; Wingate, M.; Chen, P.; Christ, N.; Cristian, C.; Fleming, G.; Kaehler, A.; Liao, X.; Liu, G.; Malureanu, C.; Mawhinney, R.; Siegert, G.; Sui, C.; Wu, L.; Zhestkov, Y.; Dawson, C.; Soni, A.; Ohta, S.; Vranas, P.
2004-01-01
Quenched QCD simulations on three volumes 8 3 x, 12 3 x and 16 3 x32 and three couplings β=5.7, 5.85 and 6.0 using domain wall fermions provide a consistent picture of quenched QCD. We demonstrate that the small induced effects of chiral symmetry breaking inherent in this formulation can be described by a residual mass (m res ) whose size decreases as the separation between the domain walls (L s ) is increased. However, at stronger couplings much larger values of L s are required to achieve a given physical value of m res . For β=6.0 and L s =16, we find m res /m s =0.033(3), while for β=5.7, and L s =48, m res /m s =0.074(5), where m s is the strange quark mass. These values are significantly smaller than those obtained from a more naive determination in our earlier studies. Important effects of topological near zero modes which should afflict an accurate quenched calculation are easily visible in both the chiral condensate and the pion propagator. These effects can be controlled by working at an appropriately large volume. A non-linear behavior of m π 2 in the limit of small quark mass suggests the presence of additional infrared subtlety in the quenched approximation. Good scaling is seen both in masses and in f π over our entire range, with inverse lattice spacing varying between 1 and 2 GeV
Witten Effect and Fractional Charges on the Domain Wall and the D-Brane-Like Dot
Kanazawa, I.; Maeda, R.
2018-04-01
We have discussed the anomalous excitations such as dyons, Majorana fermions, and quark-like fermions on the domain wall in topological materials and the D-brane-like dot, and the relation to low-energy hadrons in QCD, from the viewpoint of a field-theoretical formula.
Lin, Tao; Tang, Chi; Alyahayaei, Hamad M; Shi, Jing
2014-07-18
In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.
Dynamics of domain wall networks with junctions
International Nuclear Information System (INIS)
Avelino, P. P.; Oliveira, J. C. R. E.; Martins, C. J. A. P.; Menezes, J.; Menezes, R.
2008-01-01
We use a combination of analytic tools and an extensive set of the largest and most accurate three-dimensional field theory numerical simulations to study the dynamics of domain wall networks with junctions. We build upon our previous work and consider a class of models which, in the limit of large number N of coupled scalar fields, approaches the so-called ''ideal'' model (in terms of its potential to lead to network frustration). We consider values of N between N=2 and N=20, and a range of cosmological epochs, and we also compare this class of models with other toy models used in the past. In all cases we find compelling evidence for a gradual approach to scaling, strongly supporting our no-frustration conjecture. We also discuss the various possible types of junctions (including cases where there is a hierarchy of them) and their roles in the dynamics of the network. Finally, we provide a cosmological Zel'dovich-type bound on the energy scale of this kind of defect network: it must be lower than 10 keV.
Czech Academy of Sciences Publication Activity Database
Mokrý, Pavel; Sluka, T.
2017-01-01
Roč. 110, č. 16 (2017), č. článku 162906. ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : microscopic domain wall * electric fields * temperature dependence Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Electrical and electronic engineering Impact factor: 3.411, year: 2016 http://dx.doi.org/10.1063/1.4981874
Czech Academy of Sciences Publication Activity Database
Bednyakov, Petr; Sluka, T.; Tagantsev, A.; Damjanovic, D.; Setter, N.
2016-01-01
Roč. 28, č. 43 (2016), s. 9498-9503 ISSN 0935-9648 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : super-bandgap illumination * charged domain walls * ferroelectric BaTiO 3 * free-carrier generation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 19.791, year: 2016
Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.
Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng
2017-12-28
The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.
Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films
International Nuclear Information System (INIS)
Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.
1997-01-01
We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics
International Nuclear Information System (INIS)
Haussmann, Alexander; Schmidt, Sebastian; Wehmeier, Lukas; Eng, Lukas M.; Kirsten, Lars; Cimalla, Peter; Koch, Edmund
2017-01-01
We apply here spectral-domain optical coherence tomography (SD-OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium-doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ∝ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3-dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs' polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD-OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high-speed SD-OCT setup for the real-time DW tracking upon ferroelectric domain switching under high external fields. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Energy Technology Data Exchange (ETDEWEB)
Haussmann, Alexander; Schmidt, Sebastian; Wehmeier, Lukas; Eng, Lukas M. [Technische Universitaet Dresden, Institute of Applied Physics and Center for Advancing Electronics Dresden (cfaed), Dresden (Germany); Kirsten, Lars; Cimalla, Peter; Koch, Edmund [Technische Universitaet Dresden, Faculty of Medicine Carl Gustav Carus, Anesthesiology and Intensive Care Medicine, Clinical Sensoring and Monitoring, Dresden (Germany)
2017-08-15
We apply here spectral-domain optical coherence tomography (SD-OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium-doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ∝ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3-dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs' polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD-OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high-speed SD-OCT setup for the real-time DW tracking upon ferroelectric domain switching under high external fields. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films
International Nuclear Information System (INIS)
Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.
2000-01-01
Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented
Linear negative magnetoresistance in two-dimensional Lorentz gases
Schluck, J.; Hund, M.; Heckenthaler, T.; Heinzel, T.; Siboni, N. H.; Horbach, J.; Pierz, K.; Schumacher, H. W.; Kazazis, D.; Gennser, U.; Mailly, D.
2018-03-01
Two-dimensional Lorentz gases formed by obstacles in the shape of circles, squares, and retroreflectors are reported to show a pronounced linear negative magnetoresistance at small magnetic fields. For circular obstacles at low number densities, our results agree with the predictions of a model based on classical retroreflection. In extension to the existing theoretical models, we find that the normalized magnetoresistance slope depends on the obstacle shape and increases as the number density of the obstacles is increased. The peaks are furthermore suppressed by in-plane magnetic fields as well as by elevated temperatures. These results suggest that classical retroreflection can form a significant contribution to the magnetoresistivity of two-dimensional Lorentz gases, while contributions from weak localization cannot be excluded, in particular for large obstacle densities.
Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.
Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B
2010-09-01
The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.
Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films
International Nuclear Information System (INIS)
Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B; Steren, L B; Vega, D
2010-01-01
The angular dependence of the magnetoresistance effect has been measured on bicrystalline La 0.75 Sr 0.25 MnO 3 films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.
Stability equation and two-component Eigenmode for domain walls in scalar potential model
International Nuclear Information System (INIS)
Dias, G.S.; Graca, E.L.; Rodrigues, R. de Lima
2002-08-01
Supersymmetric quantum mechanics involving a two-component representation and two-component eigenfunctions is applied to obtain the stability equation associated to a potential model formulated in terms of two coupled real scalar fields. We investigate the question of stability by introducing an operator technique for the Bogomol'nyi-Prasad-Sommerfield (BPS) and non-BPS states on two domain walls in a scalar potential model with minimal N 1-supersymmetry. (author)
Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction
International Nuclear Information System (INIS)
Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai
2016-01-01
We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)
Deposition temperature influence on sputtered nanogranular magnetoresistive composites
International Nuclear Information System (INIS)
Mujika, M.; Arana, S.; Castano, E.
2007-01-01
Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field
Magnetoresistance in two-dimensional array of Ge/Si quantum dots
Stepina, N. P.; Koptev, E. S.; Pogosov, A. G.; Dvurechenskii, A. V.; Nikiforov, A. I.; Zhdanov, E. Yu
2012-07-01
Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.
Magnetoresistance in two-dimensional array of Ge/Si quantum dots
International Nuclear Information System (INIS)
Stepina, N P; Koptev, E S; Pogosov, A G; Dvurechenskii, A V; Nikiforov, A I; Zhdanov, E Yu
2012-01-01
Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.
Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.
Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D
2017-11-27
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.
Grain-boundary effects on the magnetoresistance properties of perovskite manganite films
International Nuclear Information System (INIS)
Gupta, A.; Gong, G.Q.; Xiao, G.; Duncombe, P.R.; Lecoeur, P.; Trouilloud, P.; Wang, Y.Y.; Dravid, V.P.; Sun, J.Z.
1996-01-01
The role of grain boundaries in the magnetoresistance (MR) properties of the manganites has been investigated by comparing the properties of epitaxial and polycrystalline films of La 0.67 D 0.33 MnO 3-δ (D=Ca,Sr, or vacancies). While the MR in the epitaxial films is strongly peaked near the ferromagnetic transition temperature and is very small at low temperatures, the polycrystalline films show large MR over a wide temperature range down to 5 K. The results are explained in terms of switching of magnetic domains in the grains and disorder-induced canting of Mn spins in the grain-boundary region. copyright 1996 The American Physical Society
Holographic QCD with topologically charged domain-wall/membranes
International Nuclear Information System (INIS)
Lin Fengli; Wu Shangyu
2008-01-01
We study the thermodynamical phase structures of holographic QCD with nontrivial topologically charged domain-wall/membranes which are originally related to the multiple θ-vacua in the large N c limit. We realize the topologically charged membranes as the holographic D6-brane fluxes in the Sakai-Sugimoto model. The D6-brane fluxes couple to the probe D8-D8-bar via Chern-Simon term, and act as the source for the baryonic current density of QCD. We find rich phase structures of the dual meson system by varying asymptotic separation of D8 and D8-bar. Especially, there can be a thermodynamically favored and stable phase of finite baryonic current density. This provides the supporting evidence for the discovery of the topologically charged membranes found in the lattice QCD calculations. We also find a crossover phase with the limiting baryonic current density and temperature which suggest a Hagedorn-like phase transition of meson dissociation.
Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.
Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix
2016-01-08
We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.
Domain wall suppression in trapped mixtures of Bose-Einstein condensates
Pepe, Francesco V.; Facchi, Paolo; Florio, Giuseppe; Pascazio, Saverio
2012-08-01
The ground-state energy of a binary mixture of Bose-Einstein condensates can be estimated for large atomic samples by making use of suitably regularized Thomas-Fermi density profiles. By exploiting a variational method on the trial densities the energy can be computed by explicitly taking into account the normalization condition. This yields analytical results and provides the basis for further improvement of the approximation. As a case study, we consider a binary mixture of 87Rb atoms in two different hyperfine states in a double-well potential and discuss the energy crossing between density profiles with different numbers of domain walls, as the number of particles and the interspecies interaction vary.
Quantum and classical contributions to linear magnetoresistance in topological insulator thin films
International Nuclear Information System (INIS)
Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Mitra, Chiranjib
2016-01-01
Three dimensional topological insulators possess backscattering immune relativistic Dirac fermions on their surface due to nontrivial topology of the bulk band structure. Both metallic and bulk insulating topological insulators exhibit weak-antilocalization in the low magnetic field and linear like magnetoresistance in higher fields. We explore the linear magnetoresistance in bulk insulating topological insulator Bi 2-x Sb x Te 3-y Se y thin films grown by pulsed laser deposition technique. Thin films of Bi 2-x Sb x Te 3-y Se y were found to be insulating in nature, which conclusively establishes the origin of linear magnetoresistance from surface Dirac states. The films were thoroughly characterized for their crystallinity and composition and then subjected to transport measurements. We present a careful analysis taking into considerations all the existing models of linear magnetoresistance. We comprehend that the competition between classical and quantum contributions to magnetoresistance results in linear magnetoresistance in high fields. We observe that the cross-over field decreases with increasing temperature and the physical argument for this behavior is explained.
Frozen magnetoresistance at magnetization reversal of granular Bi(Pb)-HTSC
International Nuclear Information System (INIS)
Sukhanov, A.A.; Omelchenko, V.I.
2004-01-01
The frozen magnetoresistance dependences of granular Bi(Pb)-HTSC samples on fields initiating a magnetic flux trapping and on magnetic reversal fields Rt(Hi, Hr) are investigated. It is found that the Rt (Hr) dependences are nonmonotonous. The frozen magnetoresistance decreases substantially after the first pulse Hr applied (Hr < Hi) but remains practically unchanged at subsequent remagnetization by magnetic pulses of alternating polarity and of the same amplitude. The effect of magnetic reversal on magnetoresistance anisotropy and the negative magnetoresistance phenomenon are studied. Is shown that the results obtained are inconsistent with the model of critical state for SC grains and the model of SC loops but are well described quantitatively by the proposed Bi(Pb)-HTSC model according to which the magnetic flux trapping occurs in normal grains with HTSC shells and the sample resistance is determined by weak link chains
Integral formula for elliptic SOS models with domain walls and a reflecting end
Energy Technology Data Exchange (ETDEWEB)
Lamers, Jules, E-mail: j.lamers@uu.nl
2015-12-15
In this paper we extend previous work of Galleas and the author to elliptic SOS models. We demonstrate that the dynamical reflection algebra can be exploited to obtain a functional equation characterizing the partition function of an elliptic SOS model with domain-wall boundaries and one reflecting end. Special attention is paid to the structure of the functional equation. Through this approach we find a novel multiple-integral formula for that partition function.
Mohammed, Hanan
2018-04-18
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
Mohammed, Hanan; Corte-Leó n, Hector; Ivanov, Yurii P.; Lopatin, Sergei; Moreno, Julian A.; Chuvilin, Andrey; Salimath, Akshaykumar; Manchon, Aurelien; Kazakova, Olga; Kosel, Jü rgen
2018-01-01
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
Domain wall QCD with physical quark masses
Blum, T.; Christ, N.H.; Frison, J.; Garron, N.; Hudspith, R.J.; Izubuchi, T.; Janowski, T.; Jung, C.; Jüttner, A.; Kelly, C.; Kenway, R.D.; Lehner, C.; Marinkovic, M.; Mawhinney, R.D.; McGlynn, G.; Murphy, D.J.; Ohta, S.; Portelli, A.; Sachrajda, C.T.; Soni, A.
2016-01-01
We present results for several light hadronic quantities ($f_\\pi$, $f_K$, $B_K$, $m_{ud}$, $m_s$, $t_0^{1/2}$, $w_0$) obtained from simulations of 2+1 flavor domain wall lattice QCD with large physical volumes and nearly-physical pion masses at two lattice spacings. We perform a short, O(3)%, extrapolation in pion mass to the physical values by combining our new data in a simultaneous chiral/continuum `global fit' with a number of other ensembles with heavier pion masses. We use the physical values of $m_\\pi$, $m_K$ and $m_\\Omega$ to determine the two quark masses and the scale - all other quantities are outputs from our simulations. We obtain results with sub-percent statistical errors and negligible chiral and finite-volume systematics for these light hadronic quantities, including: $f_\\pi$ = 130.2(9) MeV; $f_K$ = 155.5(8) MeV; the average up/down quark mass and strange quark mass in the $\\bar {\\rm MS}$ scheme at 3 GeV, 2.997(49) and 81.64(1.17) MeV respectively; and the neutral kaon mixing parameter, $B_K$...
Current-driven domain wall motion based memory devices: Application to a ratchet ferromagnetic strip
Sánchez-Tejerina, Luis; Martínez, Eduardo; Raposo, Víctor; Alejos, Óscar
2018-04-01
Ratchet memories, where perpendicular magnetocristalline anisotropy is tailored so as to precisely control the magnetic transitions, has been recently proven to be a feasible device to store and manipulate data bits. For such devices, it has been shown that the current-driven regime of domain walls can improve their performances with respect to the field-driven one. However, the relaxing time required by the traveling domain walls constitutes a certain drawback if the former regime is considered, since it results in longer device latencies. In order to speed up the bit shifting procedure, it is demonstrated here that the application of a current of inverse polarity during the DW relaxing time may reduce such latencies. The reverse current must be sufficiently high as to drive the DW to the equilibrium position faster than the anisotropy slope itself, but with an amplitude sufficiently low as to avoid DW backward shifting. Alternatively, it is possible to use such a reverse current to increase the proper range of operation for a given relaxing time, i.e., the pair of values of the current amplitude and pulse time that ensures single DW jumps for a certain latency time.
Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal
Li, Peng
2015-12-10
Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal
Li, Peng; Xia, Chuan; Zheng, Dongxing; Wang, Ping; Jin, Chao; Bai, Haili
2015-01-01
Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Study of magnetoresistance in the supercooled state of Dy-Y alloys
Jena, Rudra Prasad; Lakhani, Archana
2018-02-01
We report the magnetoresistance studies on Dy1-xYx (x ≤ 0.05) alloys across the first order helimagnetic to ferromagnetic phase transition. These alloys exhibit multiple magnetic phases on varying the temperature and magnetic field. The magnetoresistance studies in the hysteresis region shows irreversibility in forward and reverse field cycles. The resistivity values at zero field for these alloys after zero field cooling to the measurement temperatures, are different in both forward and reverse field cycles. The path dependence of magnetoresistance suggests the presence of helimagnetic phase as the supercooled metastable state which transforms to the stable ferromagnetic state on increasing the field. At high magnetic fields negative magnetoresistance following a linear dependence with field is observed which is attributed to the magnon scattering.
Magnetic field driven domain-wall propagation in magnetic nanowires
International Nuclear Information System (INIS)
Wang, X.R.; Yan, P.; Lu, J.; He, C.
2009-01-01
The mechanism of magnetic field induced magnetic domain-wall (DW) propagation in a nanowire is revealed: A static DW cannot exist in a homogeneous magnetic nanowire when an external magnetic field is applied. Thus, a DW must vary with time under a static magnetic field. A moving DW must dissipate energy due to the Gilbert damping. As a result, the wire has to release its Zeeman energy through the DW propagation along the field direction. The DW propagation speed is proportional to the energy dissipation rate that is determined by the DW structure. The negative differential mobility in the intermediate field is due to the transition from high energy dissipation at low field to low energy dissipation at high field. For the field larger than the so-called Walker breakdown field, DW plane precesses around the wire, leading to the propagation speed oscillation.
International Nuclear Information System (INIS)
Calabrese, Pasquale; Hagendorf, Christian; Doussal, Pierre Le
2008-01-01
We study the time evolution of quantum one-dimensional gapless systems evolving from initial states with a domain wall. We generalize the path integral imaginary time approach that together with boundary conformal field theory allows us to derive the time and space dependence of general correlation functions. The latter are explicitly obtained for the Ising universality class, and the typical behavior of one- and two-point functions is derived for the general case. Possible connections with the stochastic Loewner evolution are discussed and explicit results for one-point time dependent averages are obtained for generic κ for boundary conditions corresponding to stochastic Loewner evolution. We use this set of results to predict the time evolution of the entanglement entropy and obtain the universal constant shift due to the presence of a domain wall in the initial state
International Nuclear Information System (INIS)
Sun, H.Y.; Hu, H.N.; Nie, X.F.
2001-01-01
The annihilation of vertical-Bloch lines in magnetic domain walls of the ordinary hard bubbles, to which both bias fields and in-plane fields are alternately applied, is investigated experimentally. The influence of an in-plane magnetic field on ordinary hard bubbles (OHB), dumbbell domains of the first kind (ID), and dumbbell domains of the second kind (IID) was analyzed, and a critical in-plane field range [H ip 0 ,H ip 2 ] for vertical Bloch line (VBL) annihilation was found. For the three types of hard domains (H ip 0 is the minimum critical in-plane field of VBLs which begin to be unstable, H ip 2 is the minimum critical in-plane field which only needs to be applied one time for collapse of all OHBs), the critical field range is the same with H ip 0 ≅8πM s . We hypothesize that there exists a direction along which the vertical-Bloch lines in the domain walls are annihilated most easily. It is also observed that the stability of vertical-Bloch lines in the domain walls does not depend on the initial state. This provides a more detailed description of the minimum critical in-plane field than previously known
Magnetoresistance of nanogranular Ni/NiO controlled by exchange anisotropy
International Nuclear Information System (INIS)
Del Bianco, L.; Spizzo, F.; Tamisari, M.; Allia, P.
2013-01-01
A link between exchange anisotropy and magnetoresistance has been found to occur in a Ni/NiO sample consisting of Ni nanocrystallites (mean size ∼13 nm, Ni content ∼33 vol%) dispersed in a NiO matrix. This material shows metallic-type electric conduction and isotropic spin-dependent magnetoresistance as well as exchange bias effect. The latter is the outcome of an exchange anisotropy arising from the contact interaction between the Ni phase and the NiO matrix. Combined analysis of magnetization M(H) and magnetoresistance MR(H) loops measured in the 5–250 K temperature range after zero-field-cooling (ZFC) and after field-cooling (FC) from 300 K reveals that the magnetoresistance is influenced by exchange anisotropy, which is triggered by the FC process and can be modified in strength by varying the temperature. Compared to the ZFC case, the exchange anisotropy produces a horizontal shift of the FC MR(H) loop along with a reduction of the MR response associated to the reorientation of the Ni moments. A strict connection between magnetoresistance and remanent magnetization of FC loops on one side and the exchange field on the other, ruled by exchange anisotropy, is indicated. - Highlights: • Nanogranular Ni/NiO with giant magnetoresistance (MR) and exchange bias effect. • Exchange anisotropy produces a shift of the field-cooled MR(H) loop and reduces MR. • MR, remanence of field-cooled loops and exchange field are three correlated quantities. • It is possible to control MR of nanogranular systems through the exchange anisotropy
Colossal Magnetoresistance in La-Y-Ca-Mn-O Films
Chen, L.H.; Tiefel, T.H.; Jin, S.; Palstra, T.T.M.; Ramesh, R.; Kwon, C.
1996-01-01
Magnetoresistance behavior of La0.60Y0.07CaMnOx, thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10^8% at ~60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of
Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field
International Nuclear Information System (INIS)
Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.
1995-01-01
The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs
On the magnetoresistance of heavy fermion compounds
International Nuclear Information System (INIS)
Lee Chengchung; Chen Chung
1992-09-01
Starting from two-conduction-band Anderson lattice model, the magneto-transport properties of heavy fermion systems are studied in the slave boson mean field theory. The residual magnetoresistivity induced by different kinds of impurities is calculated, and the experimentally detected positive maximum structure in the residual magnetoresistance of heavy fermion systems is reproduced. The transition of field-dependent resistivity from nonmonotonic to monotonic behaviour with increasing temperature can be explained naturally by including the charge fluctuation effect. The influence of applied pressure is also investigated. (author). 22 refs, 5 figs
Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements
DEFF Research Database (Denmark)
Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan
2003-01-01
The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct...... of conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....
Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$
Kumar, Devendra; Lakhani, Archana
2016-01-01
The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear ma...
Large linear magnetoresistance in topological crystalline insulator Pb_0_._6Sn_0_._4Te
International Nuclear Information System (INIS)
Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka
2016-01-01
Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb_0_._6Sn_0_._4Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation of the carrier mobility.
International Nuclear Information System (INIS)
Yusuf, S.M.
2000-01-01
We have studied giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects by carrying out magnetization, magnetoresistance and polarized neutron reflectivity measurements on epitaxial Co/Re multilayers. Polarized neutron reflectivity study with polarization analysis gives a direct way to sense the direction of sublattice magnetization and coupling between magnetic layers. The evolution of magnetic structure as a function of the strength and direction of the applied magnetic field has been studied. The AMR effect observed in magnetoresistance study has been explained in the light of observed magnetic structure. (author)
Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films
Energy Technology Data Exchange (ETDEWEB)
Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)
2010-09-01
The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.
Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers
International Nuclear Information System (INIS)
Peral, G.; Briones, F.; Vicent, J.L.
1991-01-01
Resistance measurements have been done in amorphous Nd 12 Fe 80 B 8 sputtered films and in amorphous sputtered Nd 26 Fe 68 B 6 /Fe 92 B 8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated
Czech Academy of Sciences Publication Activity Database
Baťková, M.; Bat´ko, I.; Flachbart, K.; Janů, Zdeněk; Jurek, Karel; Konovalova, E.S.; Kováč, J.; Reiffers, M.; Sechovský, V.; Shitsevalova, N.; Šantavá, Eva; Šebek, Josef
2008-01-01
Roč. 78, č. 22 (2008), 224414/1-224414/6 ISSN 1098-0121 Grant - others:SSA(SK) VEGA2/7184/27; SRD(SK) APVT-51–0317–04; SRD(SK) APVV-0346–07; ESF(XE) COST-STSM-P16–03222; ESF(HU) COST-STSM-P16–03226 Institutional research plan: CEZ:AV0Z10100520 Keywords : electrical resistivity * europium compounds * ferromagnetic materials * magnetic domains * magnetic polarons * magnetoresistance * negative resistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008
Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration
The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.
Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems
International Nuclear Information System (INIS)
Bulgadaev, S.A.; Kusmartsev, F.V.
2005-01-01
Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag 2+δ Se. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures
Investigation of structure and magnetoresistance in Co/ZnO films
International Nuclear Information System (INIS)
Quan Zhiyong; Xu Xiaohong; Li Xiaoli; Feng, Q.; Gehring, G. A.
2010-01-01
Co/ZnO films were deposited on glass substrates by magnetron sputtering at room temperature. The structure of the as-deposited films is studied by means of x-ray diffraction, x-ray photoelectron spectroscopy, and the zero-field-cooled and field-cooled magnetization curves. It is shown that the as-deposited samples consist of a mixture of regions of metallic Co and semiconducting ZnO. Large negative magnetoresistance of 26% and 11.9% are observed in the as-deposited Co/ZnO film with Co concentration of 50.7 at. % at 10 K and room temperature, respectively. Structural analysis, the temperature dependence of the conductivity and magnetoresistance reveal that the magnetoresistance is induced by spin-dependent tunneling between regions of conducting magnetic Co through the ZnO semiconducting barriers. The enhanced magnetoresistance in the low temperature regime may be related to the existence of higher-order tunneling processes between large Co regions mediated by small Co particles.
Energy Technology Data Exchange (ETDEWEB)
Boltaev, A.P.; Pudonin, F.A. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Sherstnev, I.A., E-mail: sherstnev@lebedev.ru [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Egorov, D.A. [National Research Nuclear University MEPhI, Kashirskoe shosse 31, 115409 Moscow (Russian Federation); Kozmin, A.M. [National Research University of Electronic Technology, Shokin Square, 1, Zelenograd, 124482 Moscow (Russian Federation)
2017-04-15
Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.
Giant current-perpendicular-to-plane magnetoresistance in multilayer graphene as grown on nickel.
Bodepudi, S C; Singh, A P; Pramanik, S
2014-05-14
Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of ∼10(4)% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).
International Nuclear Information System (INIS)
Boltaev, A.P.; Pudonin, F.A.; Sherstnev, I.A.; Egorov, D.A.; Kozmin, A.M.
2017-01-01
Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.
Imaging and tuning polarity at SrTiO3 domain walls
Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; Bell, Christopher; Xie, Yanwu; Chen, Zhuoyu; Hikita, Yasuyuki; Hwang, Harold Y.; Salje, Ekhard K. H.; Kalisky, Beena
2017-12-01
Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.
Anisotropic giant magnetoresistance in NbSb2
Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.
2014-01-01
The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239
Banerjee, Sreetama; Bülz, Daniel; Reuter, Danny; Hiller, Karla; Zahn, Dietrich R T; Salvan, Georgeta
2017-01-01
We report light-induced negative organic magnetoresistance (OMAR) measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) planar hybrid devices with two different device architectures. Hybrid electronic devices with trench-isolated electrodes (HED-TIE) having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET) substrates with a channel length of 20 µm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron-hole pairs under illumination as the magnetoresistive effect scales with the photocurrent. The magnetoresistance effect was found to diminish over time under ambient conditions compared to a freshly prepared sample. We propose that the much faster degradation of the magnetoresistance effect as compared to the photocurrent was due to the incorporation of water molecules in the TIPS-pentacene film.
Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses
Czech Academy of Sciences Publication Activity Database
Janda, Tomáš; Roy, P.E.; Otxoa, R.M.; Šobáň, Zbyněk; Ramsay, A.; Irvine, A.C.; Trojánek, F.; Surynek, M.; Campion, R. P.; Gallagher, B. L.; Němec, P.; Jungwirth, Tomáš; Wunderlich, Joerg
2017-01-01
Roč. 8, May (2017), 1-7, č. článku 15226. ISSN 2041-1723 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 610115 - SC2 Institutional support: RVO:68378271 Keywords : spintronics * domain walls Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 12.124, year: 2016
International Nuclear Information System (INIS)
Nagatani, Yukinori
2004-01-01
We investigate the Hawking radiation in the gauge Higgs-Yukawa theory. The ballistic model is proposed as an effective description of the system. We find that a spherical domain wall around the black hole is formed by field dynamics rather than thermal phase transition. The formation is a general property of the black hole whose Hawking temperature is equal to or greater than the energy scale of the theory. The formation of the electroweak wall and that of the GUT wall are shown. We also find a phenomenon of the spontaneous charging-up of the black hole by the wall. The Hawking radiation drives a mechanism of the charge transportation into the black hole when C- and CP-violation are assumed. The mechanism can strongly transport the hyper-charge into a black hole of the electroweak scale
An investigation of domains and walls in two NdFeB alloys by transmission electron microscopy
International Nuclear Information System (INIS)
Young, S.; Chapman, J.N.
1993-01-01
Transmission Electron Microscopy (TEM) has been used to investigate the domain structure in NdFeB alloy ampersand The variation of domain period in thinned sections has been studied for two different alloys and an energy minimization model has been used to calculate the specific domain wall energy (σ) for each alloy. For the basic alloy (A) a value for σ of 20.4mJ/m 2 Was found, whilst the alloy with additions of Dy (B) had a value which was ∼10% lower. This apparently surprising result is attributed to a decrease in the RE-TM exchange energy which more than offsets the increase in anisotropy resulting from the addition of Dy. The behavior of domains as they approach a grain boundary has also been investigated. It has been observed that the relative orientation of the c-axes of two adjacent grains is extremely important in determining the behavior of the domain structure at the grain boundary
Ferroelectric domain continuity over grain boundaries
DEFF Research Database (Denmark)
Mantri, Sukriti; Oddershede, Jette; Damjanovic, Dragan
2017-01-01
Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain boundary-domain interactions, thereby...... impacting macroscopic ferroelectric properties in polycrystalline systems. However detailed studies of such correlated domain structures across grain boundaries are limited. In this work, we have developed the mathematical requirements for domain wall plane matching at grain boundaries of any given...... orientation. We have also incorporated the effect of grain boundary ferroelectric polarization charge created when any two domains meet at the grain boundary plane. The probability of domain wall continuity for three specific grain misorientations is studied. Use of this knowledge to optimize processing...
Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.
Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming
2017-04-07
This article reports the characterization of WTe 2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe 2 thin films.
Extreme magnetoresistance in magnetic rare-earth monopnictides
Ye, Linda; Suzuki, Takehito; Wicker, Christina R.; Checkelsky, Joseph G.
2018-02-01
The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe2 and rare-earth monopnictide La(Sb,Bi), these systems tend to be nonmagnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of 1.6 ×106% at fields of 9 T whereas the magnetoresistance itself is nonmonotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with fields above magnetic ordering temperature TN. The magnitude of the XMR is larger than in other rare-earth monopnictides including the nonmagnetic members and follows a nonsaturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare-earth-based correlated topological materials.
Tadić, Bosiljka
2018-03-01
We study dynamics of a built-in domain wall (DW) in 2-dimensional disordered ferromagnets with different sample shapes using random-field Ising model on a square lattice rotated by 45 degrees. The saw-tooth DW of the length Lx is created along one side and swept through the sample by slow ramping of the external field until the complete magnetisation reversal and the wall annihilation at the open top boundary at a distance Ly. By fixing the number of spins N =Lx ×Ly = 106 and the random-field distribution at a value above the critical disorder, we vary the ratio of the DW length to the annihilation distance in the range Lx /Ly ∈ [ 1 / 16 , 16 ] . The periodic boundary conditions are applied in the y-direction so that these ratios comprise different samples, i.e., surfaces of cylinders with the changing perimeter Lx and height Ly. We analyse the avalanches of the DW slips between following field updates, and the multifractal structure of the magnetisation fluctuation time series. Our main findings are that the domain-wall lengths materialised in different sample shapes have an impact on the dynamics at all scales. Moreover, the domain-wall motion at the beginning of the hysteresis loop (HLB) probes the disorder effects resulting in the fluctuations that are significantly different from the large avalanches in the central part of the loop (HLC), where the strong fields dominate. Specifically, the fluctuations in HLB exhibit a wide multi-fractal spectrum, which shifts towards higher values of the exponents when the DW length is reduced. The distributions of the avalanches in this segments of the loops obey power-law decay and the exponential cutoffs with the exponents firmly in the mean-field universality class for long DW. In contrast, the avalanches in the HLC obey Tsallis density distribution with the power-law tails which indicate the new categories of the scale invariant behaviour for different ratios Lx /Ly. The large fluctuations in the HLC, on the other
Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires
Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter
2011-01-01
We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...
Magnetoresistance of amorphous CuZr: weak localization in a three dimensional system
International Nuclear Information System (INIS)
Bieri, J.B.; Fert, A.; Creuzet, G.
1984-01-01
Observations of anomalous magnetoresistance in amorphous CuZr at low temperature are reported. The magnetoresistance can be precisely accounted for in theoretical models of localization for 3-dimensional metallic systems in the presence of strong spin-orbit interactions (with a significant additional contribution from the quenching of superconducting fluctuations at the lowest temperatures). Magnetoresistance measurements on various other systems show that such 3-dimensional localization effects are very generally observed in amorphous alloys. (author)
Sant, T; Ksenzov, D; Capotondi, F; Pedersoli, E; Manfredda, M; Kiskinova, M; Zabel, H; Kläui, M; Lüning, J; Pietsch, U; Gutt, C
2017-11-08
Exciting a ferromagnetic material with an ultrashort IR laser pulse is known to induce spin dynamics by heating the spin system and by ultrafast spin diffusion processes. Here, we report on measurements of spin-profiles and spin diffusion properties in the vicinity of domain walls in the interface region between a metallic Al layer and a ferromagnetic Co/Pd thin film upon IR excitation. We followed the ultrafast temporal evolution by means of an ultrafast resonant magnetic scattering experiment in surface scattering geometry, which enables us to exploit the evolution of the domain network within a 1/e distance of 3 nm to 5 nm from the Al/FM film interface. We observe a magnetization-reversal close to the domain wall boundaries that becomes more pronounced closer to the Al/FM film interface. This magnetization-reversal is driven by the different transport properties of majority and minority carriers through a magnetically disordered domain network. Its finite lateral extension has allowed us to measure the ultrafast spin-diffusion coefficients and ultrafast spin velocities for majority and minority carriers upon IR excitation.
Anomalous electronic structure and magnetoresistance in TaAs2.
Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F
2016-06-07
The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.
Domain wall oscillations induced by spin torque in magnetic nanowires
Energy Technology Data Exchange (ETDEWEB)
Sbiaa, R., E-mail: rachid@squ.edu.om [Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Chantrell, R. W. [Department of Physics, University of York, York YO10 5DD (United Kingdom)
2015-02-07
Using micromagnetic simulations, the effects of the non-adiabatic spin torque (β) and the geometry of nanowires on domain wall (DW) dynamics are investigated. For the case of in-plane anisotropy nanowire, it is observed that the type of DW and its dynamics depends on its dimension. For a fixed length, the critical switching current decreases almost exponentially with the width W, while the DW speed becomes faster for larger W. For the case of perpendicular anisotropy nanowire, it was observed that DW dynamics depends strongly on β. For small values of β, oscillations of DW around the center of nanowire were revealed even after the current is switched off. In addition to nanowire geometry and intrinsic material properties, β could provide a way to control DW dynamics.
Vortices and domain walls: 'Wormholes' in unconventional superconductors
Energy Technology Data Exchange (ETDEWEB)
Bessarab, P F [St. Petersburg State University, Universitetskaya nab. 7/9, 199164 St. Petersburg (Russian Federation); Radievsky, A V, E-mail: van_der_paul@yahoo.co.u [Immanuel Kant State University of Russia, Nevskogo str. 14, 236016 Kaliningrad (Russian Federation)
2010-01-15
In the framework of the 2D and 3D time-dependent Ginzburg-Landau model we study superconductors with multicomponent order parameter (d-pairing). We argue that topological defects inside the sample do affect its thermodynamic properties such as hysteresis loop, susceptibility, etc. Along with earlier known topological defects such as Abrikosov vortices, domain walls (DWs) which separate different magnetic phases and even vortices inside the DW, we found an interesting combination of DWs and vortices. Namely we show that equivalent magnetic phases may be linked together with a vortex going through the other magnetic phase. This configuration may correspond to a stable state even in a zero external magnetic field. We also mention that this configuration is topologically similar to the 'wormholes' in the quantum gravity.
Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals
Energy Technology Data Exchange (ETDEWEB)
Lv, Yang-Yang; Zhang, Bin-Bin; Yao, Shu-Hua, E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn; Zhou, Jian, E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn; Zhang, Shan-Tao; Lu, Ming-Hui [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Li, Xiao; Chen, Y. B., E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Chen, Yan-Feng [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Microstructure, Nanjing University, Nanjing 210093 (China)
2016-06-13
Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe{sub 2}, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 10{sup 4}% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (∼1.4 × 10{sup 4}%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.
Studies of colossal magnetoresistive oxides with radioactive isotopes
CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Amaral, V S; Araújo, J P; Butz, T; Correia, J G; Dubourdieu, C; Habermeier, H U; Lourenço, A A; Marques, J G; Da Silva, M F A; Senateur, J P; Soares, J C; Sousa, J B; Suryan, R; Tokura, Y; Tavares, P B; Tomioka, Y; Tröger, W; Vantomme, A; Vieira, J M; Wahl, U; Weiss, F P; INTC
2000-01-01
We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase...
Directory of Open Access Journals (Sweden)
Sreetama Banerjee
2017-07-01
Full Text Available We report light-induced negative organic magnetoresistance (OMAR measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynylpentacene (TIPS-pentacene planar hybrid devices with two different device architectures. Hybrid electronic devices with trench-isolated electrodes (HED-TIE having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET substrates with a channel length of 20 µm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron–hole pairs under illumination as the magnetoresistive effect scales with the photocurrent. The magnetoresistance effect was found to diminish over time under ambient conditions compared to a freshly prepared sample. We propose that the much faster degradation of the magnetoresistance effect as compared to the photocurrent was due to the incorporation of water molecules in the TIPS-pentacene film.
Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.
Sapkota, Keshab R; Chen, Weimin; Maloney, F Scott; Poudyal, Uma; Wang, Wenyong
2016-10-14
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.
NbSe3: Fermi surface and magnetoresistance under uniaxial stress
International Nuclear Information System (INIS)
Tessema, G.X.; Gamble, B.K.; Kuh, J.; Skove, M.J.; Lacerda, A.H.; Bennett, M.
1999-01-01
The Fermi surface of NbSe 3 below the two CDW transitions is still not very clear. Large magnetoresistance and giant quantum oscillations have been seen at low temperature below the second CDW transition. The SdH oscillations are attributed to one or several small pieces of electron or hole pockets spared by the two CDW transitions at 145 and 59 K. In a previous low field study (μ 0 H<8 T) of the transverse magnetoresistance (H in the (b,c) plane) we have shown that the extremal area of one of these pockets decreases linearly with strain, ε, vanishing at ε = 2.5%. Here we extend our study into the high magnetic field regime (pulsed 60 T) and investigate the effect of uniaxial stress on the magnetoresistance (I//H). Our high field study is consistent with the fermiology study and shows that uniaxial stress leads to the obliteration of a small closed pocket. Above 1% strain the magnetoresistance is linear with H with no sign of saturation. (orig.)
International Nuclear Information System (INIS)
Alguero, M.; Bushby, A.J.; Reece, M.J.; Seifert, A.
2002-01-01
Lead zirconate titanate Pb(Zr,Ti)O 3 ferroelectric thin films show significant anelastic deformation when indented with spherical tipped indenters. Experiments on films with different Zr/Ti ratio and a mixed , preferred crystallographic orientation have shown that there is a good agreement between the anelastic deformation and the maximum strain achievable by non-180 deg. domain wall movement. An expected increase of the indentation stiffness of the films also accompanies the anelastic deformation because of the single crystal elastic anisotropy. All these observations seem to indicate that non-180 deg. ferroelectric domain wall movements occur under indentation stresses and cause anelasticity. Stresses for maximum anelastic deformation are compared with those for recently reported stress-induced depolarization
Sign change of magnetoresistance in Gd-doped amorphous carbon granular films.
Ding, Shihao; Jin, Chao; Fan, Ziwei; Li, Peng; Bai, Haili
2015-11-11
Gd/C granular films with 11% Gd were fabricated by facing-target magnetron sputtering at room temperature and then annealed at 300-650 °C for 1.5 h. A magnetoresistance of -82% was obtained in the Gd/C films annealed at 650 °C at 3 K under a magnetic field of 50 kOe. A sign change of the magnetoresistance from negative to positive and then back to negative was observed in all samples as the temperature decreases. Grain boundary scattering effects, wave-function-shrinkage, cotunneling and Gd-Gd interactions account for the mechanisms of the magnetoresistance effects in different temperature regions. The sign of the magnetoresistance also varies as the magnetic field increases. At the transition temperature of 25 K, the wave-function-shrinkage effect competes with cotunneling and Gd-Gd interactions at different magnetic fields. The competition between the wave-function-shrinkage effect and the grain boundary scattering effect is approximately at the transition temperature of 100 K. The temperature range of positive magnetoresistance expands and transition temperatures are changed as the annealing temperature increases. It is related to the expansion of the temperature region for the wave-function-shrinkage effect which occurs in the Mott variable range hopping conduction mechanism.
The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature
Directory of Open Access Journals (Sweden)
Z. H. Zhang
2015-03-01
Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.
International Nuclear Information System (INIS)
Yan, Zhongbo; Wan, Shaolong
2016-01-01
Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance. (paper)
Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers
Manchon, Aurelien
2017-01-01
We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.
Czech Academy of Sciences Publication Activity Database
Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.
2004-01-01
Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004
Enhanced magnetoresistance in the binary semimetal NbAs2 due to improved crystal quality
Yokoi, K.; Murakawa, H.; Komada, M.; Kida, T.; Hagiwara, M.; Sakai, H.; Hanasaki, N.
2018-02-01
We have observed an extremely large magnetoresistance exceeding 1.9 million at 1.7 K at 40 T for a single crystal of the binary semimetal NbAs2. The magnetoresistive behavior for this compound is quantitatively reproduced by a semiclassical two-carrier model in which the significant enhancement of magnetoresistance is attributed to the almost full compensation of the hole and electron densities (0.994 6 ×105cm2 /V .s ). Our results indicate that binary semimetals with higher carrier densities have a great potential for exhibiting a further divergent increase in magnetoresistance merely through an improvement in crystal quality.
Cosmiclike domain walls in superfluid 3He-B: Instantons and diabolical points in (k,r) space
International Nuclear Information System (INIS)
Salomaa, M.M.; Volovik, G.E.
1988-01-01
The possible planar superfluid B-B boundaries between inequivalent B-phase vacua are considered; such B-B interfaces provide an analogy with the cosmic domain walls that are believed to have precipitated in the phase transitions of the early Universe. Several of them display nontrivial structure in (k,r) space (i.e., the union of the momentum and real spaces). Such a wall represents an instanton connecting two B-phase vacua with different k-space topology. The transition between the vacua occurs through the formation of a pointlike defect either in the (k,r) space, or in the (k,t) space. These defects are so-called diabolical points of codimension 4, at which the fermionic energy tends to zero, thus providing the fermionic zero modes. Such points are new examples (within condensed-matter physics) of the peculiar diabolical points, which are characterized by the occurrence of a contact between the different branches of the quasiparticle spectra; in the present case, the branches of particles and holes, respectively. These points are here discussed for the case of the superfluid phases of liquid 3 He in close analogy with the quantum field theory of fermions interacting with classical bosonic fields. The cosmiclike domain walls in superfluid 3 He-B are observable in principle; in particular, the motion of the superfluid A-B interface is governed at low temperatures by the periodical emission of these topological excitation planes
Correia, J R C C C; Martins, C J A P
2017-10-01
Topological defects unavoidably form at symmetry breaking phase transitions in the early universe. To probe the parameter space of theoretical models and set tighter experimental constraints (exploiting the recent advances in astrophysical observations), one requires more and more demanding simulations, and therefore more hardware resources and computation time. Improving the speed and efficiency of existing codes is essential. Here we present a general purpose graphics-processing-unit implementation of the canonical Press-Ryden-Spergel algorithm for the evolution of cosmological domain wall networks. This is ported to the Open Computing Language standard, and as a consequence significant speedups are achieved both in two-dimensional (2D) and 3D simulations.
Correia, J. R. C. C. C.; Martins, C. J. A. P.
2017-10-01
Topological defects unavoidably form at symmetry breaking phase transitions in the early universe. To probe the parameter space of theoretical models and set tighter experimental constraints (exploiting the recent advances in astrophysical observations), one requires more and more demanding simulations, and therefore more hardware resources and computation time. Improving the speed and efficiency of existing codes is essential. Here we present a general purpose graphics-processing-unit implementation of the canonical Press-Ryden-Spergel algorithm for the evolution of cosmological domain wall networks. This is ported to the Open Computing Language standard, and as a consequence significant speedups are achieved both in two-dimensional (2D) and 3D simulations.
Domain shape instabilities and dendrite domain growth in uniaxial ferroelectrics
Shur, Vladimir Ya.; Akhmatkhanov, Andrey R.
2018-01-01
The effects of domain wall shape instabilities and the formation of nanodomains in front of moving walls obtained in various uniaxial ferroelectrics are discussed. Special attention is paid to the formation of self-assembled nanoscale and dendrite domain structures under highly non-equilibrium switching conditions. All obtained results are considered in the framework of the unified kinetic approach to domain structure evolution based on the analogy with first-order phase transformation. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.
Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires
International Nuclear Information System (INIS)
Liang, J.; Wang, J.; Cooley, B. J.; Rench, D. W.; Samarth, N.; Paul, A.; Dellas, N. S.; Mohney, S. E.; Engel-Herbert, R.
2012-01-01
We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization, and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.
Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks
Directory of Open Access Journals (Sweden)
S. C. Bodepudi
2016-01-01
Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.
Fan, Meng; Wang, Han; Misra, Shikhar; Zhang, Bruce; Qi, Zhimin; Sun, Xing; Huang, Jijie; Wang, Haiyan
2018-02-14
(La 0.7 Sr 0.3 MnO 3 ) 0.67 :(CuO) 0.33 (LSMO:CuO) nanocomposite thin films were deposited on SrTiO 3 (001), LaAlO 3 (001), and MgO (001) substrates by pulsed laser deposition, and their microstructure as well as magnetic and magnetoresistance properties were investigated. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that LSMO:CuO films grow as highly textured self-assembled vertically aligned nanocomposite (VAN), with a systematic domain structure and strain tuning effect based on the substrate type and laser deposition frequency. A record high low-field magnetoresistance (LFMR) value of ∼80% has been achieved in LSMO:CuO grown on LaAlO 3 (001) substrate under high frequency. Detailed analysis indicates that both the strain state and the phase boundary effect play a significant role in governing the overall LFMR behavior.
Enhanced magnetoresistance induced by oxygen deficiency in La0.4Ca0.6MnO3-δ oxides
International Nuclear Information System (INIS)
Triki, M.; Dhahri, E.; Hlil, E. K.; Garden, J. L.
2014-01-01
We report electrical features and magnetoresistance behavior of the oxygen deficient La 0.4 Ca 0.6 MnO 3-δ perovskites (δ = 0, 0.15, and 0.2). These samples will be referred to as S0, S15, and S20, respectively. The dependence of electrical transport on temperature and magnetic field is systematically investigated between 2 K and 400 K in magnetic field ranging up to 5 T. The parent compound shows a stable charge ordering/antiferromagnetic state with a semiconductor-like behavior in all considered temperature range. The variable range hopping and thermally activated hopping models are found to fit well with the electrical resistivity data at low and high temperatures, respectively. Oxygen deficiency tends to weaken the charge ordering and induce ferromagnetism and metallicity at low temperature. Metal insulator transition appears at higher fields for lower oxygen deficit (S15 sample) and without field for the S20 sample. The resistivity data for S15 sample are discussed in the framework of the variable-range hopping model. Abnormal transport properties were observed in the S20 sample, characterized by the double metal-insulator transitions and low minimum behavior. These results are discussed in terms of phenomenological percolation model, based on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions. While the parent compound shows no magnetoresistance, a large magnetoresistance is observed in the deficient samples at low temperature reaching 90% and 75% at 2 T for S15 and S20 samples, respectively. Noticeably, these values reached 98% and 91% at 5 T. The appearance of colossal magnetoresistance is attributed to the spin dependent hopping between spin clusters and/or ferromagnetic domains
Magnetoresistance stories of double perovskites
Indian Academy of Sciences (India)
2015-05-28
May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...
Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization
International Nuclear Information System (INIS)
Li-Jun, Chen; De-Yong, Wang; Qing-Feng, Zhan; Wei, He; Qing-An, Li
2008-01-01
We present the magnetoresistance measurements of ultrathin Mn 5 Ge 3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between Mn 5 Ge 3 and Ge (111), the thickness of Mn 5 Ge 3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn 5 Ge 3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn 5 Ge 3 film is a potential material for spin injection. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Dynamics of strings between walls
International Nuclear Information System (INIS)
Eto, Minoru; Fujimori, Toshiaki; Nagashima, Takayuki; Nitta, Muneto; Ohashi, Keisuke; Sakai, Norisuke
2009-01-01
Configurations of vortex strings stretched between or ending on domain walls were previously found to be 1/4 Bogomol'nyi-Prasad-Sommerfield (BPS) states in N=2 supersymmetric gauge theories in 3+1 dimensions. Among zero modes of string positions, the center of mass of strings in each region between two adjacent domain walls is shown to be non-normalizable whereas the rests are normalizable. We study dynamics of vortex strings stretched between separated domain walls by using two methods, the moduli space (geodesic) approximation of full 1/4 BPS states and the charged particle approximation for string end points in the wall effective action. In the first method we explicitly obtain the effective Lagrangian in the strong coupling limit, which is written in terms of hypergeometric functions, and find the 90 deg. scattering for head-on collision. In the second method the domain wall effective action is assumed to be U(1) N gauge theory, and we find a good agreement between two methods for well-separated strings.
Oscillations in magnetoresistance and interlayer coupling in magnetic sandwich structures
International Nuclear Information System (INIS)
Barnas, J.; Bulka, B.
1997-01-01
Kubo formalism is used to calculate the magnetoresistance due to magnetization rotation in a structure consisting two magnetic films separated by nonmagnetic layer. In the approximation of an uniform relaxation time of each layer, the oscillatory term in magnetoresistance corresponds to the oscillation period which depends on the potential barriers at the interfaces. This period is longer than the oscillation period observed in the coupling parameter. (author)
Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses
International Nuclear Information System (INIS)
Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.
2014-01-01
We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w Bi ) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ F = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L ϕ ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w Bi and t smaller than λ F showed low dimensional electronic behavior at low temperatures where L ϕ (T) exceed w Bi or t
International Nuclear Information System (INIS)
Wang, C M; Lei, X L
2014-01-01
We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation. (paper)