WorldWideScience

Sample records for distributed feedback semiconductor

  1. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

  2. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

    2002-01-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  3. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

    2002-02-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  4. Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

    2013-01-01

    Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  5. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb; Yariv

    1986-07-01

    A GaA1As semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. Also reported similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  6. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb, M.; Yariv, A.

    1986-07-01

    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  7. Self-induced frequency scanning and distributed bragg reflection in semiconductor lasers with phase-conjugate feedback

    Science.gov (United States)

    Cronin-Golomb, Mark; Yariv, Amnon

    1986-07-01

    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  8. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri

    2013-10-01

    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

  9. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  10. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

    1999-01-01

    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

  11. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

    Science.gov (United States)

    Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

    2017-02-01

    Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

  12. Random distributed feedback fibre lasers

    Energy Technology Data Exchange (ETDEWEB)

    Turitsyn, Sergei K., E-mail: s.k.turitsyn@aston.ac.uk [Aston Institute of Photonic Technologies, Aston University, Birmingham B4 7ET (United Kingdom); Novosibirsk State University, 2 Pirogova str., 630090, Novosibirsk (Russian Federation); Babin, Sergey A. [Novosibirsk State University, 2 Pirogova str., 630090, Novosibirsk (Russian Federation); Institute of Automation and Electrometry SB RAS, 1 Ac. Koptug. ave., 630090, Novosibirsk (Russian Federation); Churkin, Dmitry V. [Aston Institute of Photonic Technologies, Aston University, Birmingham B4 7ET (United Kingdom); Novosibirsk State University, 2 Pirogova str., 630090, Novosibirsk (Russian Federation); Institute of Automation and Electrometry SB RAS, 1 Ac. Koptug. ave., 630090, Novosibirsk (Russian Federation); Vatnik, Ilya D.; Nikulin, Maxim [Institute of Automation and Electrometry SB RAS, 1 Ac. Koptug. ave., 630090, Novosibirsk (Russian Federation); Podivilov, Evgenii V. [Novosibirsk State University, 2 Pirogova str., 630090, Novosibirsk (Russian Federation); Institute of Automation and Electrometry SB RAS, 1 Ac. Koptug. ave., 630090, Novosibirsk (Russian Federation)

    2014-09-10

    The concept of random lasers exploiting multiple scattering of photons in an amplifying disordered medium in order to generate coherent light without a traditional laser resonator has attracted a great deal of attention in recent years. This research area lies at the interface of the fundamental theory of disordered systems and laser science. The idea was originally proposed in the context of astrophysics in the 1960s by V.S. Letokhov, who studied scattering with “negative absorption” of the interstellar molecular clouds. Research on random lasers has since developed into a mature experimental and theoretical field. A simple design of such lasers would be promising for potential applications. However, in traditional random lasers the properties of the output radiation are typically characterized by complex features in the spatial, spectral and time domains, making them less attractive than standard laser systems in terms of practical applications. Recently, an interesting and novel type of one-dimensional random laser that operates in a conventional telecommunication fibre without any pre-designed resonator mirrors–random distributed feedback fibre laser–was demonstrated. The positive feedback required for laser generation in random fibre lasers is provided by the Rayleigh scattering from the inhomogeneities of the refractive index that are naturally present in silica glass. In the proposed laser concept, the randomly backscattered light is amplified through the Raman effect, providing distributed gain over distances up to 100 km. Although an effective reflection due to the Rayleigh scattering is extremely small (∼0.1%), the lasing threshold may be exceeded when a sufficiently large distributed Raman gain is provided. Such a random distributed feedback fibre laser has a number of interesting and attractive features. The fibre waveguide geometry provides transverse confinement, and effectively one-dimensional random distributed feedback leads to the

  13. Random distributed feedback fibre lasers

    International Nuclear Information System (INIS)

    Turitsyn, Sergei K.; Babin, Sergey A.; Churkin, Dmitry V.; Vatnik, Ilya D.; Nikulin, Maxim; Podivilov, Evgenii V.

    2014-01-01

    The concept of random lasers exploiting multiple scattering of photons in an amplifying disordered medium in order to generate coherent light without a traditional laser resonator has attracted a great deal of attention in recent years. This research area lies at the interface of the fundamental theory of disordered systems and laser science. The idea was originally proposed in the context of astrophysics in the 1960s by V.S. Letokhov, who studied scattering with “negative absorption” of the interstellar molecular clouds. Research on random lasers has since developed into a mature experimental and theoretical field. A simple design of such lasers would be promising for potential applications. However, in traditional random lasers the properties of the output radiation are typically characterized by complex features in the spatial, spectral and time domains, making them less attractive than standard laser systems in terms of practical applications. Recently, an interesting and novel type of one-dimensional random laser that operates in a conventional telecommunication fibre without any pre-designed resonator mirrors–random distributed feedback fibre laser–was demonstrated. The positive feedback required for laser generation in random fibre lasers is provided by the Rayleigh scattering from the inhomogeneities of the refractive index that are naturally present in silica glass. In the proposed laser concept, the randomly backscattered light is amplified through the Raman effect, providing distributed gain over distances up to 100 km. Although an effective reflection due to the Rayleigh scattering is extremely small (∼0.1%), the lasing threshold may be exceeded when a sufficiently large distributed Raman gain is provided. Such a random distributed feedback fibre laser has a number of interesting and attractive features. The fibre waveguide geometry provides transverse confinement, and effectively one-dimensional random distributed feedback leads to the

  14. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

    Science.gov (United States)

    Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

    2009-05-25

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  15. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

    OpenAIRE

    Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

    2009-01-01

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  16. Raman fiber distributed feedback lasers.

    Science.gov (United States)

    Westbrook, Paul S; Abedin, Kazi S; Nicholson, Jeffrey W; Kremp, Tristan; Porque, Jerome

    2011-08-01

    We demonstrate fiber distributed feedback (DFB) lasers using Raman gain in two germanosilicate fibers. Our DFB cavities were 124 mm uniform fiber Bragg gratings with a π phase shift offset from the grating center. Our pump was at 1480 nm and the DFB lasers operated on a single longitudinal mode near 1584 nm. In a commercial Raman gain fiber, the maximum output power, linewidth, and threshold were 150 mW, 7.5 MHz, and 39 W, respectively. In a commercial highly nonlinear fiber, these figures improved to 350 mW, 4 MHz, and 4.3 W, respectively. In both lasers, more than 75% of pump power was transmitted, allowing for the possibility of substantial amplification in subsequent Raman gain fiber. © 2011 Optical Society of America

  17. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    International Nuclear Information System (INIS)

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-01-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

  18. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  19. Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

    International Nuclear Information System (INIS)

    Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

    2013-01-01

    We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

  20. Single-mode biological distributed feedback laser

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Maier-Flaig, Florian; Lemmer, Uli

    2013-01-01

    Single-mode second order distributed feedback (DFB) lasers of riboflavin (vitamin B2) doped gelatine films on nanostructured low refractive index material are demonstrated. Manufacturing is based on a simple UV nanoimprint and spin-coating. Emission wavelengths of 543 nm and 562 nm for two...

  1. Distributed Wireless Power Transfer With Energy Feedback

    Science.gov (United States)

    Lee, Seunghyun; Zhang, Rui

    2017-04-01

    Energy beamforming (EB) is a key technique for achieving efficient radio-frequency (RF) transmission enabled wireless energy transfer (WET). By optimally designing the waveforms from multiple energy transmitters (ETs) over the wireless channels, they can be constructively combined at the energy receiver (ER) to achieve an EB gain that scales with the number of ETs. However, the optimal design of EB waveforms requires accurate channel state information (CSI) at the ETs, which is challenging to obtain practically, especially in a distributed system with ETs at separate locations. In this paper, we study practical and efficient channel training methods to achieve optimal EB in a distributed WET system. We propose two protocols with and without centralized coordination, respectively, where distributed ETs either sequentially or in parallel adapt their transmit phases based on a low-complexity energy feedback from the ER. The energy feedback only depends on the received power level at the ER, where each feedback indicates one particular transmit phase that results in the maximum harvested power over a set of previously used phases. Simulation results show that the two proposed training protocols converge very fast in practical WET systems even with a large number of distributed ETs, while the protocol with sequential ET phase adaptation is also analytically shown to converge to the optimal EB design with perfect CSI by increasing the training time. Numerical results are also provided to evaluate the performance of the proposed distributed EB and training designs as compared to other benchmark schemes.

  2. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    Science.gov (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  3. Flexible distributed architecture for semiconductor process control and experimentation

    Science.gov (United States)

    Gower, Aaron E.; Boning, Duane S.; McIlrath, Michael B.

    1997-01-01

    Semiconductor fabrication requires an increasingly expensive and integrated set of tightly controlled processes, driving the need for a fabrication facility with fully computerized, networked processing equipment. We describe an integrated, open system architecture enabling distributed experimentation and process control for plasma etching. The system was developed at MIT's Microsystems Technology Laboratories and employs in-situ CCD interferometry based analysis in the sensor-feedback control of an Applied Materials Precision 5000 Plasma Etcher (AME5000). Our system supports accelerated, advanced research involving feedback control algorithms, and includes a distributed interface that utilizes the internet to make these fabrication capabilities available to remote users. The system architecture is both distributed and modular: specific implementation of any one task does not restrict the implementation of another. The low level architectural components include a host controller that communicates with the AME5000 equipment via SECS-II, and a host controller for the acquisition and analysis of the CCD sensor images. A cell controller (CC) manages communications between these equipment and sensor controllers. The CC is also responsible for process control decisions; algorithmic controllers may be integrated locally or via remote communications. Finally, a system server images connections from internet/intranet (web) based clients and uses a direct link with the CC to access the system. Each component communicates via a predefined set of TCP/IP socket based messages. This flexible architecture makes integration easier and more robust, and enables separate software components to run on the same or different computers independent of hardware or software platform.

  4. X-ray semiconductor spectrometer with light feedback

    International Nuclear Information System (INIS)

    Zubareva, A.M.; Iliev, S.; Kushniruk, V.F.; Rykhlyuk, A.V.; Subbotin, V.G.; Kharitonov, Yu.P.

    1977-01-01

    An X-ray spectrometer with the pulse light feedback in the preamplifier has been designed. The resolution has been obtained to be 168 eV on line of 5.9 keV. The analysis of the electronics and detector contribution to the resolution has been performed

  5. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

    1999-01-01

    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

  6. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

    1988-01-01

    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

  7. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  8. Semiconductor X-ray spectrometer with light feedback

    International Nuclear Information System (INIS)

    Zubareva, A.M.; Iliev, S.; Kushniruk, V.F.; Rykhlyuk, A.V.; Subbotin, V.G.; Kharitonov, Yu.P.

    1978-01-01

    An X-ray spectrometer has been designed consisting of a preamplifier with light pulse feedback, and a Si (Li) detector. The electric(FET) circuit is given of the preamplifier designed on field effect transistors. An identification is made of the types of noises of a sink current of 7.5 mA. It is established that a significant part of the total noise comes from the detector-FET system, and white noise from leakage current in the detector. The use in the spectrometer of the preamplifier with light pulse feedback enables the white noise to be reduced to 40-45 eV with a detector leakage current of 10 -13 A. A decrease in the noise of the detector-FET system is only possible owing to the improved technology in the manufacture of FET's. The energy resolution of the spectrometer for the 5.9 keV line is 168 eV

  9. Smith-Purcell Distributed Feedback Laser

    CERN Document Server

    Kipnis, D; Gover, A

    2005-01-01

    Smith-Purcell radiation is the emission of electromagnetic radiation by an electron beam passing next to an optical grating. Recently measurement of relatively intense power of such radiation was observed in the THz-regime [1]. To explain the high intensity and the super-linear dependence on current beyond a threshold it was suggested that the radiating device operated in the high gain regime, amplifying spontaneous emission (ASE) [1,2]. We contest this interpretation and suggest an alternative mechanism. According to our interpretation the device operates as a distributed feedback (DFB) laser oscillator, in which a forward going surface wave, excited by the beam on the grating surface, is coupled to a backward going surface wave by a second order Bragg reflection process. This feedback process produces a saturated oscillator. We present theoretical analysis of the proposed process, which fits the reported experimental results, and enables better design of the radiation device, operating as a Smith-Purcell DF...

  10. Tunable and broadband microwave frequency combs based on a semiconductor laser with incoherent optical feedback

    International Nuclear Information System (INIS)

    Zhao Mao-Rong; Wu Zheng-Mao; Deng Tao; Zhou Zhen-Li; Xia Guang-Qiong

    2015-01-01

    Based on a semiconductor laser (SL) with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs (MFCs) is proposed and investigated numerically. The results show that, under suitable operation parameters, the SL with incoherent optical feedback can be driven to operate at a regular pulsing state, and the generated MFCs have bandwidths broader than 40 GHz within a 10 dB amplitude variation. For a fixed bias current, the line spacing (or repetition frequency) of the MFCs can be easily tuned by varying the feedback delay time and the feedback strength, and the tuning range of the line spacing increases with the increase in the bias current. The linewidth of the MFCs is sensitive to the variation of the feedback delay time and the feedback strength, and a linewidth of tens of KHz can be achieved through finely adjusting the feedback delay time and the feedback strength. In addition, mappings of amplitude variation, repetition frequency, and linewidth of MFCs in the parameter space of the feedback delay time and the feedback strength are presented. (paper)

  11. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.

    2003-01-01

    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  12. Optofluidic third order distributed feedback dye laser

    DEFF Research Database (Denmark)

    Gersborg-Hansen, Morten; Kristensen, Anders

    2006-01-01

    which has a refractive index lower than that of the polymer. In combination with a third order DFB grating, formed by the array of nanofluidic channels, this yields a low threshold for lasing. The laser is straightforward to integrate on lab-on-a-chip microsystems where coherent, tunable light......This letter describes the design and operation of a polymer-based third order distributed feedback (DFB) microfluidic dye laser. The device relies on light confinement in a nanostructured polymer film where an array of nanofluidic channels is filled by capillary action with a liquid dye solution...

  13. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Science.gov (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  14. Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

    International Nuclear Information System (INIS)

    Tronciu, V Z; Mirasso, Claudio R; Colet, Pere

    2008-01-01

    We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed

  15. Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

    Institute of Scientific and Technical Information of China (English)

    Xu Zhang; Huiying Ye; Zhaoxin Song

    2008-01-01

    Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

  16. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li

    2012-12-01

    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  17. Plasmonic distributed feedback lasers at telecommunications wavelengths.

    Science.gov (United States)

    Marell, Milan J H; Smalbrugge, Barry; Geluk, Erik Jan; van Veldhoven, Peter J; Barcones, Beatrix; Koopmans, Bert; Nötzel, Richard; Smit, Meint K; Hill, Martin T

    2011-08-01

    We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

  18. Thulium distributed-feedback fiber lasers

    DEFF Research Database (Denmark)

    Agger, Søren Dyøe

    2006-01-01

    in silica and the fabri- cation, design and characterization of coherent Distributed Feed-Back (DFB) ber lasers incorporating thulium as the active laser medium. Our recent results have proved that single-frequency, single-polarization, narrow-linewidth (tens of kHz) operation of thulium doped DFB ber...... lasers is possible. Demonstrations of single-frequency lasers have, until now, been achieved at 1740 nm, 1984 nm and at a record-breaking 2090 nm. The 1740 nm laser has been boosted to 60 mW of output power with a linewidth of only 3 kHz and implemented in a plug-and-play turnkey system with SMF28-APC...

  19. Tunability of optofluidic distributed feedback dye lasers

    DEFF Research Database (Denmark)

    Gersborg-Hansen, Morten; Kristensen, Anders

    2007-01-01

    We investigate the tunability of optofluidic distributed feedback (DFB) dye lasers. The lasers rely on light-confinement in a nano-structured polymer film where an array of nanofluidic channels constitutes a third order Bragg grating DFB laser resonator with a central phase-shift. The lasers...... are operated by filling the DFB laser resonator with a dye solution by capillary action and optical pumping with a frequency doubled Nd: YAG laser. The low reflection order of the DFB laser resonator yields low out-of-plane scattering losses as well as a large free spectral range (FSR), and low threshold...... fluences down to similar to 7 mu J/mm2 are observed. The large FSR facilitates wavelength tuning over the full gain spectrum of the chosen laser dye and we demonstrate 45 nm tunability using a single laser dye by changing the grating period and dye solution refractive index. The lasers are straight...

  20. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  1. Instability of homogeneous distribution of charged substitutional impurity in semiconductors

    International Nuclear Information System (INIS)

    Vasilevskij, M.I.; Ershov, S.N.; Panteleev, V.A.

    1985-01-01

    A mechanism is suggested of instability of uniform impurity distribution in a semiconductor. The mechanism is associated with the vacancy wind effect and deflection from local neutrality in case of impurity concentration fluctuation occurrence. It is shown that the mechanism can be realized by irradiation of silicon doped with group-3 and group 5 elements

  2. Crisis route to chaos in semiconductor lasers subjected to external optical feedback

    Science.gov (United States)

    Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

    2018-03-01

    Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

  3. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

    Science.gov (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

    2017-08-03

    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  4. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  5. Controlling semiconductor nanoparticle size distributions with tailored ultrashort pulses

    International Nuclear Information System (INIS)

    Hergenroeder, R; Miclea, M; Hommes, V

    2006-01-01

    The laser generation of size-controlled semiconductor nanoparticle formation under gas phase conditions is investigated. It is shown that the size distribution can be changed if picosecond pulse sequences of tailored ultra short laser pulses (<200 fs) are employed. By delivering the laser energy in small packages, a temporal energy flux control at the target surface is achieved, which results in the control of the thermodynamic pathway the material takes. The concept is tested with silicon and germanium, both materials with a predictable response to double pulse sequences, which allows deduction of the materials' response to complicated pulse sequences. An automatic, adaptive learning algorithm was employed to demonstrate a future strategy that enables the definition of more complex optimization targets such as particle size on materials less predictable than semiconductors

  6. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar

    2001-01-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  7. Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity.

    Science.gov (United States)

    Choi, Daeyoung; Wishon, Michael J; Chang, C Y; Citrin, D S; Locquet, A

    2018-01-01

    We observe experimentally two regimes of intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity as the feedback level is increased. The first regime encountered corresponds to multistate intermittency involving two or three states composed of several combinations of periodic, quasiperiodic, and subharmonic dynamics. The second regime is observed for larger feedback levels and involves intermittency between period-doubled and chaotic regimes. This latter type of intermittency displays statistical properties similar to those of on-off intermittency.

  8. Feedback brake distribution control for minimum pitch

    Science.gov (United States)

    Tavernini, Davide; Velenis, Efstathios; Longo, Stefano

    2017-06-01

    The distribution of brake forces between front and rear axles of a vehicle is typically specified such that the same level of brake force coefficient is imposed at both front and rear wheels. This condition is known as 'ideal' distribution and it is required to deliver the maximum vehicle deceleration and minimum braking distance. For subcritical braking conditions, the deceleration demand may be delivered by different distributions between front and rear braking forces. In this research we show how to obtain the optimal distribution which minimises the pitch angle of a vehicle and hence enhances driver subjective feel during braking. A vehicle model including suspension geometry features is adopted. The problem of the minimum pitch brake distribution for a varying deceleration level demand is solved by means of a model predictive control (MPC) technique. To address the problem of the undesirable pitch rebound caused by a full-stop of the vehicle, a second controller is designed and implemented independently from the braking distribution in use. An extended Kalman filter is designed for state estimation and implemented in a high fidelity environment together with the MPC strategy. The proposed solution is compared with the reference 'ideal' distribution as well as another previous feed-forward solution.

  9. Design of distributed feedback fibre lasers

    DEFF Research Database (Denmark)

    Lauridsen, Vibeke Claudia; Søndergaard, Thomas; Varming, Poul

    1997-01-01

    A numerical model for erbium fibre lasers with Bragg gratings is presented. The model is used to optimize the location of a discrete phase-shift and the phase-shift magnitude for a distributed phase-shift.......A numerical model for erbium fibre lasers with Bragg gratings is presented. The model is used to optimize the location of a discrete phase-shift and the phase-shift magnitude for a distributed phase-shift....

  10. Measurement of neutron flux distribution by semiconductor detector

    International Nuclear Information System (INIS)

    Obradovic, D.; Bosevski, T.

    1964-01-01

    Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable

  11. Time delay signature elimination of chaos in a semiconductor laser by dispersive feedback from a chirped FBG.

    Science.gov (United States)

    Wang, Daming; Wang, Longsheng; Zhao, Tong; Gao, Hua; Wang, Yuncai; Chen, Xianfeng; Wang, Anbang

    2017-05-15

    Time delay signature (TDS) of a semiconductor laser subject to dispersive optical feedback from a chirped fibre Bragg grating (CFBG) is investigated experimentally and numerically. Different from mirror, CFBG provides additional frequency-dependent delay caused by dispersion, and thus induces external-cavity modes with irregular mode separation rather than a fixed separation induced by mirror feedback. Compared with mirror feedback, the CFBG feedback can greatly depress and even eliminate the TDS, although it leads to a similar quasi-period route to chaos with increases of feedback. In experiments, by using a CFBG with dispersion of 2000ps/nm, the TDS is decreased by 90% to about 0.04 compared with mirror feedback. Furthermore, both numerical and experimental results show that the TDS evolution is quite different: the TDS decreases more quickly down to a lower plateau (even background noise level of autocorrelation function) and never rises again. This evolution tendency is also different from that of FBG feedback, of which the TDS first decreases to a minimal value and then increases again as feedback strength increases. In addition, the CFBG feedback has no filtering effects and does not require amplification for feedback light.

  12. Boundary feedback stabilization of distributed parameter systems

    DEFF Research Database (Denmark)

    Pedersen, Michael

    1988-01-01

    The author introduces the method of pseudo-differential stabilization. He notes that the theory of pseudo-differential boundary operators is a fruitful approach to problems arising in control and stabilization theory of distributed-parameter systems. The basic pseudo-differential calculus can...

  13. Event-triggered output feedback control for distributed networked systems.

    Science.gov (United States)

    Mahmoud, Magdi S; Sabih, Muhammad; Elshafei, Moustafa

    2016-01-01

    This paper addresses the problem of output-feedback communication and control with event-triggered framework in the context of distributed networked control systems. The design problem of the event-triggered output-feedback control is proposed as a linear matrix inequality (LMI) feasibility problem. The scheme is developed for the distributed system where only partial states are available. In this scheme, a subsystem uses local observers and share its information to its neighbors only when the subsystem's local error exceeds a specified threshold. The developed method is illustrated by using a coupled cart example from the literature. Copyright © 2015 ISA. Published by Elsevier Ltd. All rights reserved.

  14. THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM

    1998-01-01

    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  15. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    International Nuclear Information System (INIS)

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.; Rosso, O. A.

    2010-01-01

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  16. Framing Feedback for School Improvement around Distributed Leadership

    Science.gov (United States)

    Kelley, Carolyn; Dikkers, Seann

    2016-01-01

    Purpose: The purpose of this article is to examine the utility of framing formative feedback to improve school leadership with a focus on task-based evaluation of distributed leadership rather than on role-based evaluation of an individual leader. Research Methods/Approach: Using data from research on the development of the Comprehensive…

  17. Emission wavelength of multilayer distributed feedback dye lasers

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Smith, Cameron L. C.; Brøkner Christiansen, Mads

    2012-01-01

    Precise emission wavelength modeling is essential for understanding and optimization of distributed feedback (DFB) lasers. An analytical approach for determining the emission wavelength based on setting the propagation constant of the Bragg condition and solving for the resulting slab waveguide m...

  18. Accurate calculation of field and carrier distributions in doped semiconductors

    Directory of Open Access Journals (Sweden)

    Wenji Yang

    2012-06-01

    Full Text Available We use the numerical squeezing algorithm(NSA combined with the shooting method to accurately calculate the built-in fields and carrier distributions in doped silicon films (SFs in the micron and sub-micron thickness range and results are presented in graphical form for variety of doping profiles under different boundary conditions. As a complementary approach, we also present the methods and the results of the inverse problem (IVP - finding out the doping profile in the SFs for given field distribution. The solution of the IVP provides us the approach to arbitrarily design field distribution in SFs - which is very important for low dimensional (LD systems and device designing. Further more, the solution of the IVP is both direct and much easy for all the one-, two-, and three-dimensional semiconductor systems. With current efforts focused on the LD physics, knowing of the field and carrier distribution details in the LD systems will facilitate further researches on other aspects and hence the current work provides a platform for those researches.

  19. Distributed User Selection in Network MIMO Systems with Limited Feedback

    KAUST Repository

    Elkhalil, Khalil; Eltayeb, Mohammed E.; Dahrouj, Hayssam; Al-Naffouri, Tareq Y.

    2015-01-01

    We propose a distributed user selection strategy in a network MIMO setting with M base stations serving K users. Each base station is equipped with L antennas, where LM ≪ K. The conventional selection strategy is based on a well known technique called semi-orthogonal user selection when the zero-forcing beamforming (ZFBF) is adopted. Such technique, however, requires perfect channel state information at the transmitter (CSIT), which might not be available or need large feedback overhead. This paper proposes an alternative distributed user selection technique where each user sets a timer that is inversely proportional to his channel quality indicator (CQI), as a means to reduce the feedback overhead. The proposed strategy allows only the user with the highest CQI to respond with a feedback. Such technique, however, remains collision free only if the transmission time is shorter than the difference between the strongest user timer and the second strongest user timer. To overcome the situation of longer transmission times, the paper proposes another feedback strategy that is based on the theory of compressive sensing, where collision is allowed and all users encode their feedback information and send it back to the base-stations simultaneously. The paper shows that the problem can be formulated as a block sparse recovery problem which is agnostic on the transmission time, which makes it a good alternative to the timer approach when collision is dominant.

  20. Distributed User Selection in Network MIMO Systems with Limited Feedback

    KAUST Repository

    Elkhalil, Khalil

    2015-09-06

    We propose a distributed user selection strategy in a network MIMO setting with M base stations serving K users. Each base station is equipped with L antennas, where LM ≪ K. The conventional selection strategy is based on a well known technique called semi-orthogonal user selection when the zero-forcing beamforming (ZFBF) is adopted. Such technique, however, requires perfect channel state information at the transmitter (CSIT), which might not be available or need large feedback overhead. This paper proposes an alternative distributed user selection technique where each user sets a timer that is inversely proportional to his channel quality indicator (CQI), as a means to reduce the feedback overhead. The proposed strategy allows only the user with the highest CQI to respond with a feedback. Such technique, however, remains collision free only if the transmission time is shorter than the difference between the strongest user timer and the second strongest user timer. To overcome the situation of longer transmission times, the paper proposes another feedback strategy that is based on the theory of compressive sensing, where collision is allowed and all users encode their feedback information and send it back to the base-stations simultaneously. The paper shows that the problem can be formulated as a block sparse recovery problem which is agnostic on the transmission time, which makes it a good alternative to the timer approach when collision is dominant.

  1. Exciton distribution function and secondary radiation in polar semiconductors

    International Nuclear Information System (INIS)

    Trallero Giner, C.; Sotolongo Costa, O.

    1985-07-01

    An explicit non-equilibrium distribution function for excitons in the ground state n=1 in the case when the fundamental interaction is with acoustical phonons is calculated for polar semiconductors. Using it, a general expression for the secondary radiation cross-section (valid for Raman, hot and thermalized luminescence processes), is obtained. The results are applied to explain the temperature dependence of the 1LO and 2LO luminescence lines half-width in CdS single crystals. The relative contributions of 3LO Raman and luminescence intensities and the variation of the secondary emission spectrum as function of exciton life-time are studied. Comparison with experimental results yields quantitative agreement. (author)

  2. Distributed Feedback Laser Based on Single Crystal Perovskite

    Science.gov (United States)

    Sun, Shang; Xiao, Shumin; Song, Qinghai

    2017-06-01

    We demonstrate a single crystal perovskite based, with grating-structured photoresist on top, highly polarized distributed feedback laser. A lower laser threshold than the Fabry-Perot mode lasers from the same single crystal CH3NH3PbBr3 microplate was obtained. Single crystal CH3NH3PbBr3 microplates was synthesized with one-step solution processed precipitation method. Once the photoresist on top of the microplate was patterned with electron beam, the device was realized. This one-step fabrication process utilized the advantage of single crystal to the greatest extend. The ultra-low defect density in single crystalline microplate offer an opportunity for lower threshold lasing action compare with poly-crystal perovskite films. In the experiment, the lasing action based on the distributed feedback grating design was found with lower threshold and higher intensity than the Fabry-Perot mode lasers supported by the flat facets of the same microplate.

  3. Review on recent Developments on Fabrication Techniques of Distributed Feedback (DFB) Based Organic Lasers

    Science.gov (United States)

    Azrina Talik, Noor; Boon Kar, Yap; Noradhlia Mohamad Tukijan, Siti; Wong, Chuan Ling

    2017-10-01

    To date, the state of art organic semiconductor distributed feedback (DFB) lasers gains tremendous interest in the organic device industry. This paper presents a short reviews on the fabrication techniques of DFB based laser by focusing on the fabrication method of DFB corrugated structure and the deposition of organic gain on the nano-patterned DFB resonator. The fabrication techniques such as Laser Direct Writing (LDW), ultrafast photo excitation dynamics, Laser Interference Lithography (LIL) and Nanoimprint Lithography (NIL) for DFB patterning are presented. In addition to that, the method for gain medium deposition method is also discussed. The technical procedures of the stated fabrication techniques are summarized together with their benefits and comparisons to the traditional fabrication techniques.

  4. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  5. Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

    Science.gov (United States)

    Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-06-17

    Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

  6. Wafer-scale fabrication of polymer distributed feedback lasers

    DEFF Research Database (Denmark)

    Christiansen, Mads Brøkner; Schøler, Mikkel; Balslev, Søren

    2006-01-01

    The authors demonstrate wafer-scale, parallel process fabrication of distributed feedback (DFB) polymer dye lasers by two different nanoimprint techniques: By thermal nanoimprint lithography (TNIL) in polymethyl methacrylate and by combined nanoimprint and photolithography (CNP) in SU-8. In both...... techniques, a thin film of polymer, doped with rhodamine-6G laser dye, is spin coated onto a Borofloat glass buffer substrate and shaped into a planar waveguide slab with first order DFB surface corrugations forming the laser resonator. When optically pumped at 532 nm, lasing is obtained in the wavelength...... range between 576 and 607 nm, determined by the grating period. The results, where 13 laser devices are defined across a 10 cm diameter wafer substrate, demonstrate the feasibility of NIL and CNP for parallel wafer-scale fabrication of advanced nanostructured active optical polymer components...

  7. Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

    2011-01-01

    The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

  8. Single-mode surface plasmon distributed feedback lasers.

    Science.gov (United States)

    Karami Keshmarzi, Elham; Tait, R Niall; Berini, Pierre

    2018-03-29

    Single-mode surface plasmon distributed feedback (DFB) lasers are realized in the near infrared using a two-dimensional non-uniform long-range surface plasmon polariton structure. The surface plasmon mode is excited onto a 20 nm-thick, 1 μm-wide metal stripe (Ag or Au) on a silica substrate, where the stripe is stepped in width periodically, forming a 1st order Bragg grating. Optical gain is provided by optically pumping a 450 nm-thick IR-140 doped PMMA layer as the top cladding, which covers the entire length of the Bragg grating, thus creating a DFB laser. Single-mode lasing peaks of very narrow linewidth were observed for Ag and Au DFBs near 882 nm at room temperature. The narrow linewidths are explained by the low spontaneous emission rate into the surface plasmon lasing mode as well as the high quality factor of the DFB structure. The lasing emission is exclusively TM polarized. Kinks in light-light curves accompanied by spectrum narrowing were observed, from which threshold pump power densities can be clearly identified (0.78 MW cm-2 and 1.04 MW cm-2 for Ag and Au DFB lasers, respectively). The Schawlow-Townes linewidth for our Ag and Au DFB lasers is estimated and very narrow linewidths are predicted for the lasers. The lasers are suitable as inexpensive, recyclable and highly coherent sources of surface plasmons, or for integration with other surface plasmon elements of similar structure.

  9. Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp

    International Nuclear Information System (INIS)

    Su Hui; Lester, Luke F

    2005-01-01

    The dynamic properties of distributed feedback lasers (DFBs) based on InAs/InGaAs quantum dots (QDs) are studied. The response function of QD DFBs under external modulation is measured, and the gain compression with photon density is identified to be the limiting factor of the modulation bandwidth. The enhancement of the gain compression by the gain saturation with the carrier density in QDs is also analysed for the first time. The linewidth of the QD DFBs is found to be more than one order of magnitude narrower than that of conventional quantum well (QW) DFBs at comparable output powers. The figure of merit for the narrow linewidth is compared between different semiconductor materials, including bulk, QWs and QDs. Linewidth re-broadening and the effects of gain offset are also investigated. Finally, the chirp of QD DFBs is studied by time-resolved-chirp measurements. The wavelength chirping of the QD DFBs under 2.5 Gbps modulation is characterized. The strong dependence of the linewidth enhancement factor on the photon density is explained by the enhancement of gain compression by the gain saturation with the carrier density, which is related to the inhomogeneous broadening and spectral hole burning in QDs

  10. Distributed force feedback in the spinal cord and the regulation of limb mechanics.

    Science.gov (United States)

    Nichols, T Richard

    2018-03-01

    This review is an update on the role of force feedback from Golgi tendon organs in the regulation of limb mechanics during voluntary movement. Current ideas about the role of force feedback are based on modular circuits linking idealized systems of agonists, synergists, and antagonistic muscles. In contrast, force feedback is widely distributed across the muscles of a limb and cannot be understood based on these circuit motifs. Similarly, muscle architecture cannot be understood in terms of idealized systems, since muscles cross multiple joints and axes of rotation and further influence remote joints through inertial coupling. It is hypothesized that distributed force feedback better represents the complex mechanical interactions of muscles, including the stresses in the musculoskeletal network born by muscle articulations, myofascial force transmission, and inertial coupling. Together with the strains of muscle fascicles measured by length feedback from muscle spindle receptors, this integrated proprioceptive feedback represents the mechanical state of the musculoskeletal system. Within the spinal cord, force feedback has excitatory and inhibitory components that coexist in various combinations based on motor task and integrated with length feedback at the premotoneuronal and motoneuronal levels. It is concluded that, in agreement with other investigators, autogenic, excitatory force feedback contributes to propulsion and weight support. It is further concluded that coexistent inhibitory force feedback, together with length feedback, functions to manage interjoint coordination and the mechanical properties of the limb in the face of destabilizing inertial forces and positive force feedback, as required by the accelerations and changing directions of both predator and prey.

  11. Flux distribution by neutrons semi-conductors detectors during the startup of the EL4 reactor

    International Nuclear Information System (INIS)

    Fuster, S.; Tarabella, A.

    1967-01-01

    The Cea developed neutron semi-conductors detectors which allows a quasi-instantaneous monitoring of neutrons flux distribution, when placed in a reactor during the tests. These detectors have been experimented in the EL4 reactor. The experiment and the results are presented and compared with reference mappings. (A.L.B.)

  12. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  13. Discrimination of defects in III-V semiconductors by positron lifetime distribution

    CERN Document Server

    Chen, Z Q; Wang, S J

    2000-01-01

    In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

  14. Temperature distribution model for the semiconductor dew point detector

    Science.gov (United States)

    Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

    2001-08-01

    The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

  15. Distributing Leadership for Sustainable Peer Feedback on Tertiary Teaching

    Science.gov (United States)

    Wingrove, Dallas; Clarke, Angela; Chester, Andrea

    2015-01-01

    A growing evidence-based literature supports the value of peer feedback as a positive professional learning activity that enhances confidence, builds collegial relationships and supports reflective practice. Less clear is how best to embed such programs in university practices. This paper describes a leadership approach developed to support the…

  16. Application of multicomponent diffusion theory for description of impurities distribution in complex diffusive doping of semiconductors

    International Nuclear Information System (INIS)

    Uskov, V.A.; Kondrachenko, O.E.; Kondrachenko, L.A.

    1977-01-01

    A phenomenological theory of multicomponent diffusion involving interaction between the components is employed to analyze how the interaction between two admixtures affects their simultaneous or consequent diffusion into a semiconductor. The theory uses the equations of multicomponent dissusion under common conditions (constant diffusion coefficients and equilibrium distribution of vacancies). The experiments are described on In and Sb simultaneous diffusion into Ge. The diffusion is performed according to the routine gas phase technology with the use of radioactive isotopes In 114 and Sb 124 . It is shown that the introduction of an additional diffusion coefficient D 12 makes it possible to simply and precisely describe the distribution of interacting admixtures in complex diffusion alloying of semiconductors

  17. GaSb-based single-mode distributed feedback lasers for sensing (Conference Presentation)

    Science.gov (United States)

    Gupta, James A.; Bezinger, Andrew; Lapointe, Jean; Poitras, Daniel; Aers, Geof C.

    2017-02-01

    GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

  18. Multisensor Distributed Track Fusion AlgorithmBased on Strong Tracking Filter and Feedback Integration1)

    Institute of Scientific and Technical Information of China (English)

    YANGGuo-Sheng; WENCheng-Lin; TANMin

    2004-01-01

    A new multisensor distributed track fusion algorithm is put forward based on combiningthe feedback integration with the strong tracking Kalman filter. Firstly, an effective tracking gateis constructed by taking the intersection of the tracking gates formed before and after feedback.Secondly, on the basis of the constructed effective tracking gate, probabilistic data association andstrong tracking Kalman filter are combined to form the new multisensor distributed track fusionalgorithm. At last, simulation is performed on the original algorithm and the algorithm presented.

  19. Distributed feedback laser amplifiers combining the functions of amplifiers and channel filters

    DEFF Research Database (Denmark)

    Wang, Z.; Durhuus, T.; Mikkelsen, Benny

    1994-01-01

    A dynamic model for distributed feedback amplifiers, including the mode coupled equations and the carrier rate equation, is established. The presented mode coupled equations have taken into account the interaction between fast changing optical signal and the waveguide with corrugations. By showin...... the possibility of amplifying 100 ps pulses without pulse broadening, we anticipate that a distributed feedback amplifier can be used as a combined amplifier and channel filter in high bit rate transmission systems....

  20. Distributed feedback dye laser pumped with copper-vapor laser emission

    Energy Technology Data Exchange (ETDEWEB)

    Mirza, S Yu; Soldatov, A N; Sukhanov, V B

    1983-10-01

    The power-spectrum characteristics of the emission of a distributed feedback dye laser pumped with a copper vapor laser have been studied. Laser action has been observed in five dyes over a tuning range of 530-723 nm with an efficiency of 12.4%. The specfic features of the distributed feedback dye laser operating at pulse repetition rates of 4 kHz are discussed.

  1. Stability of period-one (P1) oscillations generated by semiconductor lasers subject to optical injection or optical feedback.

    Science.gov (United States)

    Lin, Lyu-Chih; Liu, Ssu-Hsin; Lin, Fan-Yi

    2017-10-16

    We study the stability of period-one (P1) oscillations experimentally generated by semiconductor lasers subject to optical injection (OI) and by those subject to optical feedback (OF). With unique advantages of broad frequency tuning range and large sideband rejection ratio, P1 oscillations can be useful in applications such as photonic microwave generation, radio-over-fiber communication, and laser Doppler velocimeter. The stability of the P1 oscillations is critical for these applications, which can be affected by spontaneous emission and fluctuations in both temperature and injection current. Although linewidths of P1 oscillations generated by various schemes have been reported, the mechanisms and roles which each of the OI and the OF play have however not been investigated in detail. To characterize the stability of the P1 oscillations generated by the OI and the OF schemes, we measure the linewidths and linewidth reduction ratios (LRRs) of the P1 oscillations. The OF scheme has a narrowest linewidth of 0.21 ± 0.03 MHz compared to 4.7 ± 0.6 MHz in the OI scheme. In the OF scheme, a much larger region of LRRs higher than 90% is also found. The superior stability of the OF scheme is benefited by the fact that the P1 oscillations in the OF scheme are originated from the undamped relaxation oscillation of a single laser and can be phase-locked to one of its external cavity modes, whereas those in the OI scheme come from two independent lasers which bear no phase relation. Moreover, excess P1 linewidth broadening in the OI scheme caused by fluctuation in injection parameters associated with frequency jitter and relative intensity noise (RIN) is also minimized in the OF scheme.

  2. Distributed-feedback single heterojunction GaAs diode laser

    International Nuclear Information System (INIS)

    Scifres, D.R.; Burnham, R.D.; Streifer, W.

    1974-01-01

    Laser operation of single-heterojunction GaAl As/GaAs diode lasers using a periodic structure within the gain medium of the device, thereby obviating the need for carefully cleaved end crystal faces to produce feedback, is reported. By varying the grating period, wavelengths from 8430 to 8560 A were observed. The threshold current densities were of the same order as for normal single heterojunction diode lasers. Some advantages in output wavelengths were observed over lasers with cleared faces. (U.S.)

  3. Distributed Cooperative Secondary Control of Microgrids Using Feedback Linearization

    DEFF Research Database (Denmark)

    Bidram, Ali; Davoudi, Ali; Lewis, Frank

    2013-01-01

    This paper proposes a secondary voltage control of microgrids based on the distributed cooperative control of multi-agent systems. The proposed secondary control is fully distributed; each distributed generator (DG) only requires its own information and the information of some neighbors. The dist......This paper proposes a secondary voltage control of microgrids based on the distributed cooperative control of multi-agent systems. The proposed secondary control is fully distributed; each distributed generator (DG) only requires its own information and the information of some neighbors...... parameters can be tuned to obtain a desired response speed. The effectiveness of the proposed control methodology is verified by the simulation of a microgrid test system....

  4. Effect of Rayleigh-scattering distributed feedback on multiwavelength Raman fiber laser generation.

    Science.gov (United States)

    El-Taher, A E; Harper, P; Babin, S A; Churkin, D V; Podivilov, E V; Ania-Castanon, J D; Turitsyn, S K

    2011-01-15

    We experimentally demonstrate a Raman fiber laser based on multiple point-action fiber Bragg grating reflectors and distributed feedback via Rayleigh scattering in an ~22-km-long optical fiber. Twenty-two lasing lines with spacing of ~100 GHz (close to International Telecommunication Union grid) in the C band are generated at the watt level. In contrast to the normal cavity with competition between laser lines, the random distributed feedback cavity exhibits highly stable multiwavelength generation with a power-equalized uniform distribution, which is almost independent on power.

  5. Femtosecond time-resolved hot carrier energy distributions of photoexcited semiconductor quantum dots

    International Nuclear Information System (INIS)

    Chuang, Chi-Hung; Burda, Clemens; Chen, Xiaobo

    2013-01-01

    Using femtosecond transient absorption spectroscopy, we investigated hot carrier distributions in semiconductor cadmium selenide quantum dots. The relaxation processes represent the behavior of an ensemble of QDs. This concept is applied for analysis with the Fermi-Dirac distribution and relaxation processes among different electron-hole pair states. By extracting the experimental hot carrier distribution and fitting with the Fermi-Dirac function, we resolved the rapid thermalization processes, such as carrier-carrier and carrier-phonon interactions was resolved within one picosecond upon photoexcitation. The analysis, using the Fermi-Dirac distribution modulated by the density of states, provides a general route to understanding the carrier cooling and heat dissipation processes in quantum dot-based systems. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

    Directory of Open Access Journals (Sweden)

    Jianqiao Liu

    2017-08-01

    Full Text Available The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  7. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

    Science.gov (United States)

    Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

    2017-08-10

    The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  8. Suppression of resistive wall instabilities with distributed, independently controlled, active feedback coils

    International Nuclear Information System (INIS)

    Cates, C.; Shilov, M.; Mauel, M. E.; Navratil, G. A.; Maurer, D.; Mukherjee, S.; Nadle, D.; Bialek, J.; Boozer, A.

    2000-01-01

    External kink instabilities are suppressed in a tokamak experiment by either (1) energizing a distributed array of independently controlled active feedback coils mounted outside a segmented resistive wall or (2) inserting a second segmented wall having much higher electrical conductivity. When the active feedback coils are off and the highly conducting wall is withdrawn, kink instabilities excited by plasma current gradients grow at a rate comparable to the magnetic diffusion rate of the resistive wall. (c) 2000 American Institute of Physics

  9. High-power random distributed feedback fiber laser: From science to application

    Energy Technology Data Exchange (ETDEWEB)

    Du, Xueyuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Naval Academy of Armament, Beijing 100161 (China); Zhang, Hanwei; Xiao, Hu; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2016-10-15

    A fiber laser based on random distributed feedback has attracted increasing attention in recent years, as it has become an important photonic device and has found wide applications in fiber communications or sensing. In this article, recent advances in high-power random distributed feedback fiber laser are reviewed, including the theoretical analyses, experimental approaches, discussion on the practical applications and outlook. It is found that a random distributed feedback fiber laser can not only act as an information photonics device, but also has the feasibility for high-efficiency/high-power generation, which makes it competitive with conventional high-power laser sources. In addition, high-power random distributed feedback fiber laser has been successfully applied for midinfrared lasing, frequency doubling to the visible and high-quality imaging. It is believed that the high-power random distributed feedback fiber laser could become a promising light source with simple and economic configurations. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Simulation of drift dynamics of arbitrary carrier distributions in complex semiconductor detectors

    CERN Document Server

    De Castro Manzano, Pablo

    2014-01-01

    An extensible open-source C++ software for the simulation of elec- trons and holes drift in semiconductor detectors of complex geometries has been developed in order to understand transient currents and charge collection efficiencies of arbitrary charge distributions. The simulation is based on Ramo’s theorem formalism to obtain induced currents in the electrodes. Efficient open source C++ numerical libraries are used to ob- tain the electric and weighting field using finite-element methods and to simulate the carrier transport. A graphical user interface is also provided. The tool has already been proved useful to model laser induced transient currents

  11. Measurement of neutron flux distribution by semiconductor detector; merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [Institut za nuklearne nauke Boris Kidric, Vinca, Beograd (Yugoslavia)

    1964-07-01

    Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable.

  12. Anisotropic formation and distribution of stacking faults in II-VI semiconductor nanorods.

    Science.gov (United States)

    Hughes, Steven M; Alivisatos, A Paul

    2013-01-09

    Nanocrystals of cadmium selenide exhibit a form of polytypism with stable forms in both the wurtzite and zinc blende crystal structures. As a result, wurtzite nanorods of cadmium selenide tend to form stacking faults of zinc blende along the c-axis. These faults were found to preferentially form during the growth of the (001) face, which accounts for 40% of the rod's total length. Since II-VI semiconductor nanorods lack inversion symmetry along the c-axis of the particle, the two ends of the nanorod may be identified by this anisotropic distribution of faults.

  13. Proposal for the momentum-resolved and time-resolved optical measurement of the current distribution in semiconductors.

    Science.gov (United States)

    Liu, Jiang-Tao; Su, Fu-Hai; Deng, Xin-Hua; Wang, Hai

    2012-05-21

    The two-color optical coherence absorption spectrum (QUIC-AB) of semiconductors in the presence of a charge current is investigated. We find that the QUIC-AB depends strongly not only on the amplitude of the electron current but also on the direction of the electron current. Thus, the amplitude and the angular distribution of current in semiconductors can be detected directly in real time with the QUIC-AB.

  14. Active Probing Feedback based Self Configurable Intelligent Distributed Antenna System

    DEFF Research Database (Denmark)

    Kumar, Ambuj

    collectively as Place Time Coverage & Capacity (PTC2). The dissertation proves through the concept of the PTC2 that the network performance can severely be degraded by the excessive and unrealistic site demands, the network management inefficiency, and the consequence of the accumulation of subscribers...... challenge through a viable solution that is based on injecting intelligence and services in parallel layers through a Distributed Antenna Systems (DAS) network. This approach would enable the remote sites to acquire intelligence and a resource pool at the same time, thereby managing the network dynamics...... promptly and aptly to absorb the PTC2 wobble. An Active Probing Management System (APMS) is proposed as a supporting architecture, to assist the intelligent system to keep a check on the variations at each and every site by either deploying the additional antenna or by utilising the service antenna...

  15. Single-mode biological distributed feedback lasers based on vitamin B2 doped gelatin

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Maier-Flaig, F.; Lemmer, U.

    Biological second-order distributed feedback (DFB) lasers are presented. Riboflavin (vitamin B2) doped gelatin as active material is spin-coated onto nanoimprinted polymer with low refractive index. DFB grating periods of 368 nm and 384 nm yield laser emission at 543 nm and 562 nm, respectively....

  16. Distribution of Feedback among Teacher and Students in Online Collaborative Learning in Small Groups

    Science.gov (United States)

    Coll, Cesar; Rochera, Maria Jose; de Gispert, Ines; Diaz-Barriga, Frida

    2013-01-01

    This study explores the characteristics and distribution of the feedback provided by the participants (a teacher and her students) in an activity organized inside a collaborative online learning environment. We analyse 853 submissions made by two groups of graduate students and their teacher (N1 = 629 & N2 = 224) involved in the collaborative…

  17. Highly stable microwave carrier generation using a dual-frequency distributed feedback laser

    NARCIS (Netherlands)

    Khan, M.R.H.; Bernhardi, Edward; Marpaung, D.A.I.; Burla, M.; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus; Roeloffzen, C.G.H.

    2012-01-01

    Photonic generation of microwave carriers by using a dual-frequency distributed feedback waveguide laser in ytterbium-doped aluminum oxide is demonstrated. A highperformance optical frequency locked loop is implemented to stabilize the microwave carrier. This approach results in a microwave

  18. Intra-laser-cavity microparticle sensing with a dual-wavelength distributed-feedback laser

    NARCIS (Netherlands)

    Bernhardi, Edward H.; van der Werf, Kees O; Hollink, Anton J F; Wörhoff, Kerstin; de Ridder, René M; Subramaniam, Vinod; Pollnau, Markus

    An integrated intra-laser-cavity microparticle sensor based on a dual-wavelength distributed-feedback channel waveguide laser in ytterbium-doped amorphous aluminum oxide on a silicon substrate is demonstrated. Real-time detection and accurate size measurement of single micro-particles with diameters

  19. On the modification of the Fermi-Dirac distribution function in degenerate semiconductors

    International Nuclear Information System (INIS)

    Chakraborty, P.K.; Biswas, S.K.; Ghatak, K.P.

    2004-01-01

    An attempt is made to study the Fermi-Dirac distribution function in degenerate semiconductors forming band tails (f p ) on the basis of a newly formulated electron dispersion law. It appears, taking n-GaAs as an example, that the influence of the carrier concentration (N i ) on f p is more significant than that of f 0 and f p is more effective than f 0 for higher values of N i . The relative change in Fermi-Dirac function with respect to f0((Δf/f0),Δf=fp-f0) for a fixed value of impurity screening potential, has initially zero value and then decreases with increasing electron energy (E). Thereafter exhibiting the minimum value, the (Δf/f0) increases at a relatively slow rate with increasing E and for higher value of E, f p approaches to f 0 . The present formulation provides us the key to investigate the transport properties of degenerate semiconductors which, in turn, depend on the solution of the Boltzmann transport equation and is expected to agree better with the experiments

  20. Factorization and the synthesis of optimal feedback gains for distributed parameter systems

    Science.gov (United States)

    Milman, Mark H.; Scheid, Robert E.

    1990-01-01

    An approach based on Volterra factorization leads to a new methodology for the analysis and synthesis of the optimal feedback gain in the finite-time linear quadratic control problem for distributed parameter systems. The approach circumvents the need for solving and analyzing Riccati equations and provides a more transparent connection between the system dynamics and the optimal gain. The general results are further extended and specialized for the case where the underlying state is characterized by autonomous differential-delay dynamics. Numerical examples are given to illustrate the second-order convergence rate that is derived for an approximation scheme for the optimal feedback gain in the differential-delay problem.

  1. Output Feedback Distributed Containment Control for High-Order Nonlinear Multiagent Systems.

    Science.gov (United States)

    Li, Yafeng; Hua, Changchun; Wu, Shuangshuang; Guan, Xinping

    2017-01-31

    In this paper, we study the problem of output feedback distributed containment control for a class of high-order nonlinear multiagent systems under a fixed undirected graph and a fixed directed graph, respectively. Only the output signals of the systems can be measured. The novel reduced order dynamic gain observer is constructed to estimate the unmeasured state variables of the system with the less conservative condition on nonlinear terms than traditional Lipschitz one. Via the backstepping method, output feedback distributed nonlinear controllers for the followers are designed. By means of the novel first virtual controllers, we separate the estimated state variables of different agents from each other. Consequently, the designed controllers show independence on the estimated state variables of neighbors except outputs information, and the dynamics of each agent can be greatly different, which make the design method have a wider class of applications. Finally, a numerical simulation is presented to illustrate the effectiveness of the proposed method.

  2. Picoseconds pulse generation and pulse width determination processes of a distributed feedback dye laser

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2004-08-01

    A mathematical model has been developed to describe the dynamic emission of Nd-glass, distributed feedback dye laser (DFDL), and periodical grating temperature. The suggested model allows the investigation of the time behavior of Nd-glass laser and DFDL pulsed. Moreover, it allows studying the effect of the laser input parameters of Nd-glass laser on the spectral characteristics of the output DFDL pulses such as pulse width, delay time, and time separation

  3. Transport Imaging of Spatial Distribution of Mobility-Lifetime (Micro Tau) Product in Bulk Semiconductors for Nuclear Radiation Detection

    Science.gov (United States)

    2012-06-01

    reproducibility for currents of 3×10-10 A, and 6×10-10 A. An operating current of 1×10-10 A shows higher variations in the distribution beginning at...York: John Wiley & Sons, 2000. [21] A. Owens and A. Peacock , “Compound semiconductor radiation detectors,” Nucl. Instr. and Meth. A, vol. 531, pp. 18...A. G. Kozorezov, J. K. Wigmore, A. Owens, R. den Hartog, A. Peacock , and H. A. Al-Jawari, “Resolution degradation of semiconductor detectors due to

  4. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  5. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    International Nuclear Information System (INIS)

    Filippov, V. V.; Bormontov, E. N.

    2013-01-01

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material’s anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors

  6. Entanglement distribution schemes employing coherent photon-to-spin conversion in semiconductor quantum dot circuits

    Science.gov (United States)

    Gaudreau, Louis; Bogan, Alex; Korkusinski, Marek; Studenikin, Sergei; Austing, D. Guy; Sachrajda, Andrew S.

    2017-09-01

    Long distance entanglement distribution is an important problem for quantum information technologies to solve. Current optical schemes are known to have fundamental limitations. A coherent photon-to-spin interface built with quantum dots (QDs) in a direct bandgap semiconductor can provide a solution for efficient entanglement distribution. QD circuits offer integrated spin processing for full Bell state measurement (BSM) analysis and spin quantum memory. Crucially the photo-generated spins can be heralded by non-destructive charge detection techniques. We review current schemes to transfer a polarization-encoded state or a time-bin-encoded state of a photon to the state of a spin in a QD. The spin may be that of an electron or that of a hole. We describe adaptations of the original schemes to employ heavy holes which have a number of attractive properties including a g-factor that is tunable to zero for QDs in an appropriately oriented external magnetic field. We also introduce simple throughput scaling models to demonstrate the potential performance advantage of full BSM capability in a QD scheme, even when the quantum memory is imperfect, over optical schemes relying on linear optical elements and ensemble quantum memories.

  7. Spectral distribution of the efficiency of terahertz difference frequency generation upon collinear propagation of interacting waves in semiconductor crystals

    International Nuclear Information System (INIS)

    Orlov, Sergei N; Polivanov, Yurii N

    2007-01-01

    Dispersion phase matching curves and spectral distributions of the efficiency of difference frequency generation in the terahertz range are calculated for collinear propagation of interacting waves in zinc blende semiconductor crystals (ZnTe, CdTe, GaP, GaAs). The effect of the pump wavelength, the nonlinear crystal length and absorption in the terahertz range on the spectral distribution of the efficiency of difference frequency generation is analysed. (nonlinear optical phenomena)

  8. Local and global stability for Lotka-Volterra systems with distributed delays and instantaneous negative feedbacks

    Science.gov (United States)

    Faria, Teresa; Oliveira, José J.

    This paper addresses the local and global stability of n-dimensional Lotka-Volterra systems with distributed delays and instantaneous negative feedbacks. Necessary and sufficient conditions for local stability independent of the choice of the delay functions are given, by imposing a weak nondelayed diagonal dominance which cancels the delayed competition effect. The global asymptotic stability of positive equilibria is established under conditions slightly stronger than the ones required for the linear stability. For the case of monotone interactions, however, sharper conditions are presented. This paper generalizes known results for discrete delays to systems with distributed delays. Several applications illustrate the results.

  9. Novel UEP LT Coding Scheme with Feedback Based on Different Degree Distributions

    Directory of Open Access Journals (Sweden)

    Li Ya-Fang

    2016-01-01

    Full Text Available Traditional unequal error protection (UEP schemes have some limitations and problems, such as the poor UEP performance of high priority data and the seriously sacrifice of low priority data in decoding property. Based on the reasonable applications of different degree distributions in LT codes, this paper puts forward a novel UEP LT coding scheme with a simple feedback to compile these data packets separately. Simulation results show that the proposed scheme can effectively protect high priority data, and improve the transmission efficiency of low priority data from 2.9% to 22.3%. Furthermore, it is fairly suitable to apply this novel scheme to multicast and broadcast environments since only a simple feedback introduced.

  10. Distributed feedback interband cascade lasers with top grating and corrugated sidewalls

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Feng [Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA; Stocker, Michael [Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA; Pham, John [Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA; Towner, Frederick [Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA; Shen, Kun [Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA; Wang, Jie [Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, USA; Lascola, Kevin [Thorlabs Quantum Electronics, 10335 Guilford Rd, Jessup, Maryland 20794, USA

    2018-03-26

    Distributed feedback (DFB) interband cascade lasers (ICLs) with a 1st order top surface grating were designed and fabricated. Partially corrugated sidewalls were implemented to suppress high order lateral modes. The DFB ICLs have 4 mm long and 4.5 mu m wide ridge waveguides and are mounted epi-up on AlN submounts. We demonstrated a continuous-wave (CW) DFB ICL, from a first wafer which has a large detuning of the gain peak from the DFB wavelength, with a side mode suppression ratio of 30 dB. With proper matching of grating feedback and the gain peak wavelength for the second wafer, a DFB ICL was demonstrated with a maximum CW output power and a maximum wall plug efficiency reaching 42 mW and 2%, respectively, at 25 degrees C. The lasing wavelengths of both lasers are around 3.3 mu m at 25 degrees C. Published by AIP Publishing.

  11. Low-frequency fluctuation regime in a multimode semiconductor laser subject to a mode-selective optical feedback

    International Nuclear Information System (INIS)

    Rogister, F.; Sciamanna, M.; Deparis, O.; Megret, P.; Blondel, M.

    2002-01-01

    We study numerically the dynamics of a multimode laser diode subject to a mode-selective optical feedback by using a generalization of the Lang-Kobayashi equations. In this configuration, only one longitudinal mode of the laser is reinjected into the laser cavity; the other modes are free. When the laser operates in the low-frequency fluctuation regime, our model predicts intensity bursts in the free modes simultaneously with dropouts in the selected mode, in good agreement with recent experiments. In the frame of our model, intensity bursts and dropouts are associated with collisions of the system trajectory in phase space with saddle-type antimodes

  12. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    Science.gov (United States)

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

  13. Extended-bandwidth frequency sweeps of a distributed feedback laser using combined injection current and temperature modulation.

    Science.gov (United States)

    Hefferman, Gerald; Chen, Zhen; Wei, Tao

    2017-07-01

    This article details the generation of an extended-bandwidth frequency sweep using a single, communication grade distributed feedback (DFB) laser. The frequency sweep is generated using a two-step technique. In the first step, injection current modulation is employed as a means of varying the output frequency of a DFB laser over a bandwidth of 99.26 GHz. A digital optical phase lock loop is used to lock the frequency sweep speed during current modulation, resulting in a linear frequency chirp. In the second step, the temperature of the DFB laser is modulated, resulting in a shifted starting laser output frequency. A laser frequency chirp is again generated beginning at this shifted starting frequency, resulting in a frequency-shifted spectrum relative to the first recorded data. This process is then repeated across a range of starting temperatures, resulting in a series of partially overlapping, frequency-shifted spectra. These spectra are then aligned using cross-correlation and combined using averaging to form a single, broadband spectrum with a total bandwidth of 510.9 GHz. In order to investigate the utility of this technique, experimental testing was performed in which the approach was used as the swept-frequency source of a coherent optical frequency domain reflectometry system. This system was used to interrogate an optical fiber containing a 20 point, 1-mm pitch length fiber Bragg grating, corresponding to a period of 100 GHz. Using this technique, both the periodicity of the grating in the frequency domain and the individual reflector elements of the structure in the time domain were resolved, demonstrating the technique's potential as a method of extending the sweeping bandwidth of semiconductor lasers for frequency-based sensing applications.

  14. Extended-bandwidth frequency sweeps of a distributed feedback laser using combined injection current and temperature modulation

    Science.gov (United States)

    Hefferman, Gerald; Chen, Zhen; Wei, Tao

    2017-07-01

    This article details the generation of an extended-bandwidth frequency sweep using a single, communication grade distributed feedback (DFB) laser. The frequency sweep is generated using a two-step technique. In the first step, injection current modulation is employed as a means of varying the output frequency of a DFB laser over a bandwidth of 99.26 GHz. A digital optical phase lock loop is used to lock the frequency sweep speed during current modulation, resulting in a linear frequency chirp. In the second step, the temperature of the DFB laser is modulated, resulting in a shifted starting laser output frequency. A laser frequency chirp is again generated beginning at this shifted starting frequency, resulting in a frequency-shifted spectrum relative to the first recorded data. This process is then repeated across a range of starting temperatures, resulting in a series of partially overlapping, frequency-shifted spectra. These spectra are then aligned using cross-correlation and combined using averaging to form a single, broadband spectrum with a total bandwidth of 510.9 GHz. In order to investigate the utility of this technique, experimental testing was performed in which the approach was used as the swept-frequency source of a coherent optical frequency domain reflectometry system. This system was used to interrogate an optical fiber containing a 20 point, 1-mm pitch length fiber Bragg grating, corresponding to a period of 100 GHz. Using this technique, both the periodicity of the grating in the frequency domain and the individual reflector elements of the structure in the time domain were resolved, demonstrating the technique's potential as a method of extending the sweeping bandwidth of semiconductor lasers for frequency-based sensing applications.

  15. Single-user MIMO versus multi-user MIMO in distributed antenna systems with limited feedback

    Science.gov (United States)

    Schwarz, Stefan; Heath, Robert W.; Rupp, Markus

    2013-12-01

    This article investigates the performance of cellular networks employing distributed antennas in addition to the central antennas of the base station. Distributed antennas are likely to be implemented using remote radio units, which is enabled by a low latency and high bandwidth dedicated link to the base station. This facilitates coherent transmission from potentially all available antennas at the same time. Such distributed antenna system (DAS) is an effective way to deal with path loss and large-scale fading in cellular systems. DAS can apply precoding across multiple transmission points to implement single-user MIMO (SU-MIMO) and multi-user MIMO (MU-MIMO) transmission. The throughput performance of various SU-MIMO and MU-MIMO transmission strategies is investigated in this article, employing a Long-Term evolution (LTE) standard compliant simulation framework. The previously theoretically established cell-capacity improvement of MU-MIMO in comparison to SU-MIMO in DASs is confirmed under the practical constraints imposed by the LTE standard, even under the assumption of imperfect channel state information (CSI) at the base station. Because practical systems will use quantized feedback, the performance of different CSI feedback algorithms for DASs is investigated. It is shown that significant gains in the CSI quantization accuracy and in the throughput of especially MU-MIMO systems can be achieved with relatively simple quantization codebook constructions that exploit the available temporal correlation and channel gain differences.

  16. Stabilizing operation point technique based on the tunable distributed feedback laser for interferometric sensors

    Science.gov (United States)

    Mao, Xuefeng; Zhou, Xinlei; Yu, Qingxu

    2016-02-01

    We describe a stabilizing operation point technique based on the tunable Distributed Feedback (DFB) laser for quadrature demodulation of interferometric sensors. By introducing automatic lock quadrature point and wavelength periodically tuning compensation into an interferometric system, the operation point of interferometric system is stabilized when the system suffers various environmental perturbations. To demonstrate the feasibility of this stabilizing operation point technique, experiments have been performed using a tunable-DFB-laser as light source to interrogate an extrinsic Fabry-Perot interferometric vibration sensor and a diaphragm-based acoustic sensor. Experimental results show that good tracing of Q-point was effectively realized.

  17. Temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers

    Science.gov (United States)

    Duan, J.; Huang, H.; Schires, K.; Poole, P. J.; Wang, C.; Grillot, F.

    2018-02-01

    In this paper, we investigate the temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers. In comparison with their quantum well counterparts, results show that quantum dot lasers have spectral linewidths rather insensitive to the temperature with minimum values below 200 kHz in the range of 283K to 303K. The experimental results are also well confirmed by numerical simulations. Overall, this work shows that quantum dot lasers are excellent candidates for various applications such as coherent communication systems, high-resolution spectroscopy, high purity photonic microwave generation and on-chip atomic clocks.

  18. Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

    Science.gov (United States)

    Duan, J.; Huang, H.; Lu, Z. G.; Poole, P. J.; Wang, C.; Grillot, F.

    2018-03-01

    This paper reports on the spectral linewidth of InAs/InP quantum dot distributed feedback lasers. Owing to a low inversion factor and a low linewidth enhancement factor, a narrow spectral linewidth of 160 kHz (80 kHz intrinsic linewidth) with a low sensitivity to temperature is demonstrated. When using anti-reflection coatings on both facets, narrow linewidth operation is extended to high powers, believed to be due to a reduction in the longitudinal spatial hole burning. These results confirm the high potential of quantum dot lasers for increasing transmission capacity in future coherent communication systems.

  19. Nanoimprinted distributed feedback lasers comprising TiO2 thin films

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Smith, Cameron; Leung, Michael C.

    2013-01-01

    Design guidelines for optimizing the sensing performance of nanoimprinted second order distributed feedback dye lasers are presented. The guidelines are verified by experiments and simulations. The lasers, fabricated by UV-nanoimprint lithography into Pyrromethene doped Ormocomp thin films on glass......, have their sensor sensitivity enhanced by a factor of up to five via the evaporation of a titanium dioxide (TiO2) waveguiding layer. The influence of the TiO2 layer thickness on the device sensitivity is analyzed with a simple model that accurately predicts experimentally measured wavelength shifts...

  20. Nanoimprinted distributed feedback dye laser sensor for real-time imaging of small molecule diffusion

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Dufva, Martin; Kristensen, Anders

    2014-01-01

    Label-free imaging is a promising tool for the study of biological processes such as cell adhesion and small molecule signaling processes. In order to image in two dimensions of space current solutions require motorized stages which results in low imaging frame rates. Here, a highly sensitive...... distributed feedback (DFB) dye laser sensor for real-time label-free imaging without any moving parts enabling a frame rate of 12 Hz is presented. The presence of molecules on the laser surface results in a wavelength shift which is used as sensor signal. The unique DFB laser structure comprises several areas...

  1. Nanotopography enhanced mobility determines mesenchymal stem cell distribution on micropatterned semiconductors bearing nanorough areas.

    Science.gov (United States)

    Gallach Pérez, Darío; Punzón Quijorna, Esther; Sanz, Ruy; Torres-Costa, Vicente; García Ruiz, Josefa P; Manso Silván, Miguel

    2015-02-01

    Surface micropatterns are relevant instruments for the in vitro analysis of cell cultures in non-conventional planar conditions. In this work, two semiconductors (Si and TiO2) have been micropatterned by combined ion-beam/chemical-etching processes leading to selective areas bearing nanorough features. A preferential affinity of human mesenchymal stem cells (hMSCs) for planar areas versus nanotopographic ones is observed. Fluorescence microscopy after β-catenin staining suggests that hMSCs adhesion is inhibited on nanostructured porous silicon areas. This has a direct impact in the development of actin fibers and suggests different cell migration mechanisms on the materials of a micropattern. hMSCs organization on nanotopographic micropatterns has been modeled by using a simplified random walk approach. The model attributes preferential cell mobilities on the nanotopographic areas with respect to the planar and considers purely stochastic movement with no inertial term. Simulations of the cell distribution have been run on 1D and 2D micropatterns and compared with the real hMSC cultures. The simulations allow defining two regimes for cell organization as a function of cell density. hMSCs ordering on planar areas is diffusion-induced in most micropatterns but constriction forced disorder appears for high cell densities. The relative mobility on the planar versus nanotopographic areas can be used as a quality indicator of the nanotopography contrasts in the diffusion induced ordering regime. It is shown that the relative mobility is favorable for the TiO2 versus the Si based system, and allows envisaging its use for the calibrated design of nanotopography based micropatterned materials. Copyright © 2014 Elsevier B.V. All rights reserved.

  2. Output feedback control of heat transport mechanisms in parabolic distributed solar collectors

    KAUST Repository

    Elmetennani, Shahrazed

    2016-08-05

    This paper presents an output feedback control for distributed parabolic solar collectors. The controller aims at forcing the outlet temperature to track a desired reference in order to manage the produced heat despite the external disturbances. The proposed control strategy is derived using the distributed physical model of the system to avoid the loss of information due to model approximation schemes. The system dynamics are driven to follow reference dynamics defined by a transport equation with a constant velocity, which allows to control the transient behavior and the response time of the closed loop. The designed controller depends only on the accessible measured variables which makes it easy for real time implementation and useful for industrial plants. Simulation results show the efficiency of the reference tracking closed loop under different working conditions.

  3. Distributed Intrusion Sensor Using DFB Laser with Optical Feedback and Saturable Absorber

    Directory of Open Access Journals (Sweden)

    Kyoo Nam Choi

    2018-01-01

    Full Text Available Characteristics of a distributed intrusion sensor using a coherent DFB laser diode with an external optical feedback and saturable absorber were experimentally investigated. The stimulus at a location of 2 km using a PZT transducer placed the location of a simulated intruder in Φ-OTDR trace after averaging 32 times. Field trials demonstrated the detection of a vehicle and a pedestrian crossing above the sensing line and a loop in a burial depth of 50 cm. This distributed intrusion sensor using a coherent DFB laser diode as the light source had the advantages of a simple structure and intruder detection capability at the underground burial location.

  4. SAFCM: A Security-Aware Feedback Control Mechanism for Distributed Real-Time Embedded Systems

    DEFF Research Database (Denmark)

    Ma, Yue; Jiang, Wei; Sang, Nan

    2012-01-01

    Distributed Real-time Embedded (DRE) systems are facing great challenges in networked, unpredictable and especially unsecured environments. In such systems, there is a strong need to enforce security on distributed computing nodes in order to guard against potential threats, while satisfying......-time systems, a multi-input multi-output feedback loop is designed and a model predictive controller is deployed based on an equation model that describes the dynamic behavior of the DRE systems. This control loop uses security level scaling to globally control the CPU utilization and security performance...... for the whole system. We propose a "security level" metric based on an evolution of cryptography algorithms used in embedded systems. Experimental results demonstrate that SAFCM not only has the excellent adaptivity compared to open-loop mechanism, but also has a better overall performance than PID control...

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  6. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  7. Fabrication of 32Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

    International Nuclear Information System (INIS)

    Zhou Dai-Bing; Wang Hui-Tao; Zhang Rui-Kang; Wang Bao-Jun; Bian Jing; An Xin; Lu Dan; Zhao Ling-Juan; Zhu Hong-Liang; Ji Chen; Wang Wei

    2015-01-01

    A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10 mW at 0 V bias when the injection current of the distributed feedback laser is 100 mA at 25°C. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.5V pp nonreturn-to-zero pseudorandom modulation signal at −2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained. (paper)

  8. Distributed feedback multimode Brillouin–Raman random fiber laser in the S-band

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Jemangin, M H; Harun, S W

    2013-01-01

    A novel S-band multimode Brillouin–Raman random fiber laser based on distributed feedback of Rayleigh scattered light is demonstrated. It relies on a short length, 7.7 km long angle-cleaved dispersion compensating fiber in a mirror-less open cavity. Two 1425 nm laser diodes at a modest operating power amplify a Brillouin pump (BP) signal, which in turn generates a multi-wavelength laser output through the stimulated Brillouin scattering. Eleven Brillouin Stokes lines, spanning from 1515.15 to 1516.00 nm, were obtained at a Raman pump power of 361.66 mW. Out of these, five odd Brillouin Stokes lines were generated with a flat peak power of about 0 dBm. (letter)

  9. Studies on widely tunable ultra-short laser pulses using energy transfer distributed feedback dye laser

    International Nuclear Information System (INIS)

    Ahamed, M.B.; Ramalingam, A.; Palanisamy, P.K.

    2003-01-01

    This paper presents both theoretical and experimental study of the characteristics of Nd: YAG laser pumped energy transfer distributed feedback dye laser (ETDFDL). Using theoretical model proposed, the behavior of ETDFDL such as the characteristics of donor DFDL, the acceptor DFDL, the dependence of their pulse width and output power on donor-acceptor concentrations and pump power are studied for dye mixture Rhodamine 6G and Cresyl Violet in detail. Experimentally using prism-dye cell configuration, the ETDFDL output is obtained and the output energy of DFDL is measured at the emission peaks of donor and acceptor dyes for different pump powers and donor-acceptor concentrations. In addition, the DFDL linewidth measurement has been carried out at the lasing wavelengths of the donor and acceptor dyes using Fabry-Perot etalon and the tunability of DFDL is measured to be in the wavelength range of 545-680 nm

  10. Inversionless gain via six-wave mixing and the investigation of distributed feedback

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hong [College of Physics and Electronic Engineering, Hainan Normal University, Haikou, 571158 (China); Zhang, Ting-Gui [School of Mathematics and Statistics, Hainan Normal University, Haikou, 571158 (China); Zou, Xu [College of Physics and Electronic Engineering, Hainan Normal University, Haikou, 571158 (China); Zhang, Yan, E-mail: zhangy345@nenu.edu.cn [School of Physics and Center for Quantum Sciences, Northeast Normal University, Changchun 130024 (China)

    2017-05-10

    In the present paper, we investigate the spectral-line enhancement of a coherently driven treble-Λ type atomic system. The numerical results show that the amplitudes and the amplification region of probe fields can be all-optically manipulated by modulating the detunings and intensities of coupling fields. In this case, we trap the cold atoms of treble-Λ type in a one-dimensional optical lattice to study the intensity envelopes by the modulation of gain or simultaneous modulation of gain and index. - Highlights: • There are three advantages in this model. • Firstly, it can simultaneously control the three-color probe fields. • Secondly, it allows synchronous nonlinear manipulation of treble-light signals at one network node. • Thirdly, it can be realized distributed feedback lasers.

  11. First operation of a powerful FEL with two-dimensional distributed feedback

    CERN Document Server

    Agarin, N V; Bobylev, V B; Ginzburg, N S; Ivanenko, V G; Kalinin, P V; Kuznetsov, S A; Peskov, N Yu; Sergeev, A S; Sinitsky, S L; Stepanov, V D

    2000-01-01

    A W-band (75 GHz) FEL of planar geometry driven by a sheet electron beam was realised using the pulse accelerator ELMI (0.8 MeV/3 kA/5 mu s). To provide the spatial coherence of radiation from different parts of the electron beam with a cross-section of 0.4x12 cm two-dimensional distributed feedback systems have been employed using a 2-D Bragg resonator of planar geometry. The resonator consisted of two 2-D Bragg reflectors separated by a regular waveguide section. The total energy in the microwave pulse of microsecond duration was 100 J corresponding to a power of approx 100 MW. The main component of the FEL radiation spectrum was at 75 GHz that corresponded to the zone of effective Bragg reflection found from 'cold' microwave testing of the resonator. The experimental data compared well with the results of theoretical analysis.

  12. High-resolution distributed-feedback fiber laser dc magnetometer based on the Lorentzian force

    International Nuclear Information System (INIS)

    Cranch, G A; Flockhart, G M H; Kirkendall, C K

    2009-01-01

    A low-frequency magnetic field sensor, based on a current-carrying beam driven by the Lorentzian force, is described. The amplitude of the oscillation is measured by a distributed-feedback fiber laser strain sensor attached to the beam. The transduction mechanism of the sensor is derived analytically using conventional beam theory, which is shown to accurately predict the responsivity of a prototype sensor. Excellent linearity and negligible hysteresis are demonstrated. Noise sources in the fiber laser strain sensor are described and thermo-mechanical noise in the transducer is estimated. The prototype sensor achieves a magnetic field resolution of 5 nT Hz for 25 mA of current, which is shown to be close to the predicted thermo-mechanical noise limit of the sensor. The current is supplied optically through a separate optical fiber yielding an electrically passive sensor head

  13. Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

    Science.gov (United States)

    Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

    2014-10-28

    Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

  14. Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings

    Science.gov (United States)

    Wang, Dong-Bo; Zhang, Jin-Chuan; Cheng, Feng-Min; Zhao, Yue; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

    2018-02-01

    In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at 4.76 μm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any mode hop by the optimized antireflection (AR) coating on the front facet. The AR coating consists of a double layer dielectric of Al2O3 and Ge. For a 2-mm laser cavity, the maximum output power of the AR-coated DFB-QCL was more than 170 mW at 20 °C with a high wall-plug efficiency (WPE) of 4.7% in a continuous-wave (CW) mode.

  15. Single-frequency thulium-doped distributed-feedback fibre laser

    DEFF Research Database (Denmark)

    Agger, Søren; Povlsen, Jørn Hedegaard; Varming, Poul

    2004-01-01

    We have successfully demonstrated a single-frequency distributed-feedback (DFB) thulium-doped silica fiber laser emitting at a wavelength of 1735 nm. The laser cavity is less than 5 cm long and is formed by intracore UV-written Bragg gratings with a phase shift. The laser is pumped at 790 nm from...... a Ti:sapphire laser and has a threshold pump power of 59 mW. The laser has a maximum output power of 1 mW in a singlefrequency, single-polarization radiation mode and is tunable over a few nanometers. To the best of the authors’ knowledge, this is the first report of a single-frequency DFB fiber laser...... that uses thulium as the amplifying medium. The lasing wavelength is the longest demonstrated with DFB fiber lasers and yet is among the shortest obtained for thulium-doped silica fiber lasers....

  16. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  17. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    International Nuclear Information System (INIS)

    Yanchev, I.

    2003-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated

  18. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in mis-structures

    International Nuclear Information System (INIS)

    Yanchev, I; Slavcheva, G.

    1993-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ 2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ 2 determining the amplitude of the potential fluctuations is calculated. 7 refs. (orig.)

  19. Potential fluctuations due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    International Nuclear Information System (INIS)

    Slavcheva, G.; Yanchev, I.

    1991-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening due to the image charge with respect to the metal electrode in MIS-structure is taken into account, introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ 2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ 2 determining the amplitude of the potential fluctuations is calculated. (author). 7 refs, 1 fig

  20. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    CERN Document Server

    Yanchev, I

    2003-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.

  1. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    Energy Technology Data Exchange (ETDEWEB)

    Yanchev, I

    2003-07-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.

  2. Moving mesh finite element method for finite time extinction of distributed parameter systems with positive exponential feedback

    International Nuclear Information System (INIS)

    Garnadi, A.D.

    1997-01-01

    In the distributed parameter systems with exponential feedback, non-global existence of solution is not always exist. For some positive initial values, there exist finite time T such that the solution goes to infinity, i.e. finite time extinction or blow-up. Here is present a numerical solution using Moving Mesh Finite Element to solve the distributed parameter systems with exponential feedback close to blow-up time. The numerical behavior of the mesh close to the time of extinction is the prime interest in this study

  3. The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions

    Directory of Open Access Journals (Sweden)

    Krzysztof Jόzwikowska

    2015-06-01

    Full Text Available The main goal of this work is to determine a statistical non-equilibrium distribution function for the electron and holes in semiconductor heterostructures in steady-state conditions. Based on the postulates of local equilibrium, as well as on the integral form of the weighted Gyarmati’s variational principle in the force representation, using an alternative method, we have derived general expressions, which have the form of the Fermi–Dirac distribution function with four additional components. The physical interpretation of these components has been carried out in this paper. Some numerical results of a non-equilibrium distribution function for an electron in HgCdTe structures are also presented.

  4. Immediate Feedback on Accuracy and Performance: The Effects of Wireless Technology on Food Safety Tracking at a Distribution Center

    Science.gov (United States)

    Goomas, David T.

    2012-01-01

    The effects of wireless ring scanners, which provided immediate auditory and visual feedback, were evaluated to increase the performance and accuracy of order selectors at a meat distribution center. The scanners not only increased performance and accuracy compared to paper pick sheets, but were also instrumental in immediate and accurate data…

  5. The Effects of Computerized Auditory Feedback on Electronic Article Surveillance Tag Placement in an Auto-Parts Distribution Center

    Science.gov (United States)

    Goomas, David T.

    2008-01-01

    In this report from the field, computerized auditory feedback was used to inform order selectors and order selector auditors in a distribution center to add an electronic article surveillance (EAS) adhesive tag. This was done by programming handheld computers to emit a loud beep for high-priced items upon scanning the item's bar-coded Universal…

  6. Business Activity Monitoring: Real-Time Group Goals and Feedback Using an Overhead Scoreboard in a Distribution Center

    Science.gov (United States)

    Goomas, David T.; Smith, Stuart M.; Ludwig, Timothy D.

    2011-01-01

    Companies operating large industrial settings often find delivering timely and accurate feedback to employees to be one of the toughest challenges they face in implementing performance management programs. In this report, an overhead scoreboard at a retailer's distribution center informed teams of order selectors as to how many tasks were…

  7. Distribution of volatile organic compounds over a semiconductor Industrial Park in Taiwan.

    Science.gov (United States)

    Chiu, Kong-Hwa; Wu, Ben-Zen; Chang, Chih-Chung; Sree, Usha; Lo, Jiunn-Guang

    2005-02-15

    This study examined volatile organic compounds (VOC) concentration in ambient air collected during the years 2000--2003 at several different locations of Hsinchu Science-based Industrial Park (HSIP) in Taiwan. A canister automated GC-MS system analyzed the volatile organics in ambient air grasp samples according to T0-15 method. Oxygenated volatiles were the most abundant VOC detected in HSIP followed by aromatics that are commonly used as solvents in the semiconductor industries. The major components measured in the ambient air are 2-propanol (29-135 ppbv), acetone (12-164 ppbv), benzene (0.7-1.7 ppbv), and toluene (13-20 ppbv). At some of the sampling locations, odorous compounds such as carbon disulfide and dimethyl sulfide levels exceed threshold values. The estimated toluene/benzene ratio is very high at most of the sites. However, the total amount of VOC is reduced over the years from 2000 to 2003 due to strict implementation on use and discharge of solvents in industries. There exists no definite seasonal pattern for sporadic occurrence of high levels of some of the volatile organics. Stagnant weather conditions with low wind speeds aid accumulation of toxic species at ground level. The results entail that hi-tech semiconductor industries are still a potential source for harmful organic substances to surrounding microenvironment.

  8. Distributed Cooperative Current-Sharing Control of Parallel Chargers Using Feedback Linearization

    Directory of Open Access Journals (Sweden)

    Jiangang Liu

    2014-01-01

    Full Text Available We propose a distributed current-sharing scheme to address the output current imbalance problem for the parallel chargers in the energy storage type light rail vehicle system. By treating the parallel chargers as a group of agents with output information sharing through communication network, the current-sharing control problem is recast as the consensus tracking problem of multiagents. To facilitate the design, input-output feedback linearization is first applied to transform the nonidentical nonlinear charging system model into the first-order integrator. Then, a general saturation function is introduced to design the cooperative current-sharing control law which can guarantee the boundedness of the proposed control. The cooperative stability of the closed-loop system under fixed and dynamic communication topologies is rigorously proved with the aid of Lyapunov function and LaSalle invariant principle. Simulation using a multicharging test system further illustrates that the output currents of parallel chargers are balanced using the proposed control.

  9. Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

    Science.gov (United States)

    Talla Mbé, Jimmi Hervé; Woafo, Paul

    2018-03-01

    We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

  10. Acoustic Emission Source Location Using a Distributed Feedback Fiber Laser Rosette

    Directory of Open Access Journals (Sweden)

    Fang Li

    2013-10-01

    Full Text Available This paper proposes an approach for acoustic emission (AE source localization in a large marble stone using distributed feedback (DFB fiber lasers. The aim of this study is to detect damage in structures such as those found in civil applications. The directional sensitivity of DFB fiber laser is investigated by calculating location coefficient using a method of digital signal analysis. In this, autocorrelation is used to extract the location coefficient from the periodic AE signal and wavelet packet energy is calculated to get the location coefficient of a burst AE source. Normalization is processed to eliminate the influence of distance and intensity of AE source. Then a new location algorithm based on the location coefficient is presented and tested to determine the location of AE source using a Delta (Δ DFB fiber laser rosette configuration. The advantage of the proposed algorithm over the traditional methods based on fiber Bragg Grating (FBG include the capability of: having higher strain resolution for AE detection and taking into account two different types of AE source for location.

  11. Tunable organic distributed feedback dye laser device excited through Förster mechanism

    Science.gov (United States)

    Tsutsumi, Naoto; Hinode, Taiki

    2017-03-01

    Tunable organic distributed feedback (DFB) dye laser performances are re-investigated and characterized. The slab-type waveguide DFB device consists of air/active layer/glass substrate. Active layer consisted of tris(8-quinolinolato)aluminum (Alq3), 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) dye, and polystyrene (PS) matrix. Effective energy transfer from Alq3 to DCM through Förster mechanism enhances the laser emission. Slope efficiency in the range of 4.9 and 10% is observed at pump energy region higher than 0.10-0.15 mJ cm-2 (lower threshold), which is due to the amplified spontaneous emission (ASE) and lasing. Typical slope efficiency for lasing in the range of 2.0 and 3.0% is observed at pump energy region higher than 0.25-0.30 mJ cm-2 (higher threshold). The tuning wavelength for the laser emission is ranged from 620 to 645 nm depending on the ASE region.

  12. Distributed-feedback dye laser for picosecond ultraviolet and visible spectroscopy

    International Nuclear Information System (INIS)

    Yaney, Perry P.; Kliner, Dahv A. V.; Schrader, Paul E.; Farrow, Roger L.

    2000-01-01

    We describe the design and operation of a tunable, picosecond laser system for use in time-resolved spectroscopic measurements in the visible and ultraviolet (UV) spectral region. The laser is designed for fine tuning and high wavelength stability. A Nd:YAG-pumped distributed-feedback dye laser (DFDL) generates pulses that are ∼100 ps in duration with a nearly transform-limited linewidth (∼5 GHz) at a 20 Hz repetition rate. The DFDL pulses are amplified in two bow-tie amplifiers, providing pulse energies of up to 3.0 mJ; the amplified pulses may be frequency doubled to the UV spectral region, providing up to 1.0 mJ. The DFDL wavelength is computer stabilized to within ±0.8 pm (±0.7 GHz, two standard deviations), allowing the wavelength to be stationed on a narrow atomic or molecular transition or permitting nearly continuous spectral scans. Application of the laser system to studies of OH energy transfer has been demonstrated; both laser-induced-fluorescence and degenerate-four-wave-mixing spectra have been recorded. (c) 2000 American Institute of Physics

  13. MATLAB simulation of a Distributed Feedback (DFB) laser with chirp effects

    Science.gov (United States)

    Espe, Burt L.

    1994-12-01

    A model of a distributed feedback (DFB) laser was implemented in MATLAB and SIMULINK. Using the laser rate equation, the model was simulated to obtain general characteristics of the chirp of the lasers frequency. The simulations were controlled by using different drive current waveforms, based on various bit patterns, data rates, and drive current values (threshold current and the extinction ratio). Once created, the laser drive current was passed to the SIMULINK DFB laser model. The output of a simulation provided frequency chirp, laser power emitted, photon density, and carrier density data. Two sets of simulations were conducted. The first set of simulations focused on the data rates and bit patterns. From these simulations it was determined that the transition from a ZERO bit to a ONE bit caused the greatest frequency excursions. Also, as the data rate increases the maximum frequency excursion increases. Finally, the first set of simulations revealed that the predictability of the chirp decreases as the data rate increases and as the complexity of the bit pattern increases. The second set of simulations examined the effect of the extinction ratio on frequency chirp. By plotting the maximum frequency excursion against its respective extinction ratio, it was determined that in some cases the maximum frequency excursions in a system could be minimized.

  14. Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

    Science.gov (United States)

    Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

    2007-01-01

    Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

  15. Bio-effects of repetitively pulsed ultra-fast distributed feedback dye lasers

    International Nuclear Information System (INIS)

    Khan, N.; Ahmad, M.I.; Sheikh, A.

    1999-01-01

    Results of experimental study showing an unexpected rise in pulses of distributed feedback dye laser (DFDL) output due to temperature accumulation in dye cell during passively Q-Switched, a Mode-locked operation is reported. This unintended increase in number of pulse duration, per pulse energy may cause side-effects when used for selective photo thermolysis. To probe this phenomenon most commonly dye was excited with 10 to 20 pulses of second harmonic of a passively Q-Switched and Mode-locked Nd-YaG laser. The outputs of DFDL and Nd:YaG laser were recorded by Imacon 675-streak camera. The peak of DFDL output pulses was found delayed proportionally from the peak of the NYAG pulses by more than one inter-pulse period of excitation laser. A computer program was used to simulate the experimentally measured delay to estimate thermal decay constants and energy retained by the medium to determine the amount of incremental fluctuations in output. The delay between peaks of Nd:YAG (input) and DFDL(output) pulses was found to vary from 10 to 14 nanoseconds for various cavity lengths. It was found that for smaller inter-pulse periods the effect of gradual build-up satisfies the threshold conditions for some of the pulses that otherwise can not. This may lead to unintended increase in energy fluence causing overexposure-induced side-effects. (author)

  16. Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

    International Nuclear Information System (INIS)

    Gol'dman, E. I.

    2006-01-01

    Mobile impurities in the form of ions and neutral associations are present in the insulator films that isolate the semiconductor from the metal electrode. If temperatures and the polarizing electric field are sufficiently high, impurities concentrate at the insulator-semiconductor interface where they exchange electrons with the semiconductor. It is shown that the pairwise interaction of particles via the field of elastic stresses caused by the concentration-related expansion of the insulator can give rise to an instability in the impurity distribution that is uniform over the contact. The stationary small-scale ordering of the particles over the contact of the insulator with the semiconductor arises in the solution of point defects, which is accompanied by annular flows of the particles

  17. Fast BPM data distribution for global orbit feedback using commercial gigabit ethernet technology

    International Nuclear Information System (INIS)

    Hulsart, R.; Cerniglia, P.; Michnoff, R.; Minty, M.

    2011-01-01

    In order to correct beam perturbations in RHIC around 10Hz, a new fast data distribution network was required to deliver BPM position data at rates several orders of magnitude above the capability of the existing system. The urgency of the project limited the amount of custom hardware that could be developed, which dictated the use of as much commercially available equipment as possible. The selected architecture uses a custom hardware interface to the existing RHIC BPM electronics together with commercially available Gigabit Ethernet switches to distribute position data to devices located around the collider ring. Using the minimum Ethernet packet size and a field programmable gate array (FPGA) based state machine logic instead of a software based driver, real-time and deterministic data delivery is possible using Ethernet. The method of adapting this protocol for low latency data delivery, bench testing of Ethernet hardware, and the logic to construct Ethernet packets using FPGA hardware will be discussed. A robust communications system using almost all commercial off-the-shelf equipment was developed in under a year which enabled retrofitting of the existing RHIC BPM system to provide 10 KHz data delivery for a global orbit feedback scheme using 72 BPMs. Total latencies from data acquisition at the BPMs to delivery at the controller modules, including very long transmission distances, were kept under 100 (micro)s, which provide very little phase error in correcting the 10 Hz oscillations. Leveraging off of the speed of Gigabit Ethernet and wide availability of Ethernet products enabled this solution to be fully implemented in a much shorter time and at lower cost than if a similar network was developed using a proprietary method.

  18. Robust Speed Tracking Control for a Micro Turbine as a Distributed Energy Resource via Feedback Domination and Disturbance Observer

    Directory of Open Access Journals (Sweden)

    Ancheng Xu

    2017-01-01

    Full Text Available Micro turbine (MT is characterized with complex dynamics, parameter uncertainties, and variable working conditions. In this paper, a novel robust controller is investigated for a single-shaft micro turbine as a distributed energy resource by integrating a feedback domination control technique and a feedforward disturbance compensation. An active estimation process of the mismatched disturbances is firstly enabled by constructing a disturbance observer. Secondly, we adopt a feedback domination technique, rather than popularly used feedback linearization methods, to handle the system nonlinearities. In an explicit way, the composite controllers are then derived by recursive design based on Lyapunov theory while a global input-to-state stability can be guaranteed. Abundant comparison simulation results are provided to demonstrate the effectiveness of the proposed scheme, which not only perform an improved closed-loop control performance comparing to all existing results, but also render a simple control law which will ease its practical implementation.

  19. Fine distributed moderating material to the enhance feedback effects in LBE cooled rast reactors

    Energy Technology Data Exchange (ETDEWEB)

    Merk, Bruno [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Reactor Safety Div.

    2013-07-01

    In this work it is demonstrated, that the concept of enhanced feedback coefficients is transferable to LBE cooled fast reactors. The demonstration is based on the fuel assembly design of the CDT project. The effect of the moderating material on the neutron spectrum, on the k{sub inf}, and on the fuel temperature feedback and the coolant feedback is shown, discussed and compared to SFRs. The calculations are performed with the 2D lattice transport code HELIOS and based on the fully detailed fuel assembly geometry representation. (orig.)

  20. [A Methane Detection System Using Distributed Feedback Laser at 1 654 nm].

    Science.gov (United States)

    Li, Bin; Liu, Hui-fang; He, Qi-xin; Zhai, Bing; Pan, Jiao-qing; Zheng, Chuan-tao; Wang, Yi-ding

    2016-01-01

    A methane (CH4) detection system based on tunable diode laser absorption spectroscopy (TDLAS) technique was experimentally demonstrated. A distributed feedback (DFB) laser around 1 654 nm, an open reflective sensing probe and two InGaAs photodiodes were adopted in the system. The electrical part of the system mainly includes the laser temperature control & modulation module and the orthogonal lock-in amplifier module. Temperature and spectrum tests on the DFB laser indicate that, the laser temperature fluctuation can be limited to the range of -0.02-0.02 degrees C, the laser's emitting wavelength varies linearly with the temperature and injection current, and also good operation stability of the laser was observed through experiments. Under a constant working temperature, the center wavelength of the laser is varied linearly by adjusting the driving current. Meanwhile, a 5 kHz sine wave signal and a 10 Hz saw wave signal were provided by the driving circuit for the harmonic extraction purpose. The developed orthogonal lock-in amplifier can extract the If and 2f harmonic signals with the extraction error of 3.55% and 5% respectively. By using the open optical probe, the effective optical pass length was doubled to 40 cm. Gas detection experiment was performed to derive the relation between the harmonic amplitude and the gas concentration. As the concentration increases from 1% to 5%, the amplitudes of the 1f harmonic and the 2f harmonic signal were obtained, and good linear ration between the concentration and the amplitude ratio was observed, which proves the normal function of the developed detection system. This system is capable to detect other trace gases by using relevant DFB lasers.

  1. Surface-plasmon-enhanced lasing emission based on polymer distributed feedback laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dingke, E-mail: dingke.zhang@gmail.com, E-mail: shijianchen@gmail.com [School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Chen, Shijian, E-mail: dingke.zhang@gmail.com, E-mail: shijianchen@gmail.com; Huang, Yingzhou; Zhang, Zhen [School of Physics, Chongqing University, Chongqing 401331 (China); Wang, Yanping; Ma, Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2015-01-14

    Optical losses associated with the metallic contacts necessary for charge injection are an obstacle to the development of electrically pumped organic lasers. In this work, we show that it is possible to overcome these losses by introducing surface plasmons (SPs) in a distributed feedback laser to enhance the lasing emission. We perform a detailed study of the SPs influence on the lasing emission. We experimentally show that enhanced lasing emission has been successfully achieved in the presence of a metal electrode. The laser emission is strongly dependent on the thickness of Ag layer. By optimizing the thickness of Ag layer, surface-plasmon-enhanced lasing emission has been achieved with much reduced thresholds and higher intensity. When the thickness of the Ag layer increases to 50 nm, the device exhibits ten-fold emission intensity and a fifth of excitation threshold comparing with Ag-free one. The finite-difference time-domain (FDTD) results show that large field intensity is built at the 4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran:/poly(9-vinylcarbazole)Ag interface, which could lead to a strong coupling between lasing and SPs, and consequently a much enhanced laser emission at the photon energy of around 2.02 eV (615 nm). Our FDTD simulations gave an explanation of the effects of the SPs on lasing operation in the periodic structures. The use of SPs would lead to a new class of highly efficient solid-state laser sources and provide a new path to achieve electrically pumped organic lasers.

  2. A rho scaffold integrates the secretory system with feedback mechanisms in regulation of auxin distribution.

    Directory of Open Access Journals (Sweden)

    Ora Hazak

    2010-01-01

    Full Text Available Development in multicellular organisms depends on the ability of individual cells to coordinate their behavior by means of small signaling molecules to form correctly patterned tissues. In plants, a unique mechanism of directional transport of the signaling molecule auxin between cells connects cell polarity and tissue patterning and thus is required for many aspects of plant development. Direction of auxin flow is determined by polar subcellular localization of PIN auxin efflux transporters. Dynamic PIN polar localization results from the constitutive endocytic cycling to and from the plasma membrane, but it is not well understood how this mechanism connects to regulators of cell polarity. The Rho family small GTPases ROPs/RACs are master regulators of cell polarity, however their role in regulating polar protein trafficking and polar auxin transport has not been established. Here, by analysis of mutants and transgenic plants, we show that the ROP interactor and polarity regulator scaffold protein ICR1 is required for recruitment of PIN proteins to the polar domains at the plasma membrane. icr1 mutant embryos and plants display an a array of severe developmental aberrations that are caused by compromised differential auxin distribution. ICR1 functions at the plasma membrane where it is required for exocytosis but does not recycle together with PINs. ICR1 expression is quickly induced by auxin but is suppressed at the positions of stable auxin maxima in the hypophysis and later in the embryonic and mature root meristems. Our results imply that ICR1 is part of an auxin regulated positive feedback loop realized by a unique integration of auxin-dependent transcriptional regulation into ROP-mediated modulation of cell polarity. Thus, ICR1 forms an auxin-modulated link between cell polarity, exocytosis, and auxin transport-dependent tissue patterning.

  3. Dye laser with distributed feedback and with pumping by copper-vapor laser

    Energy Technology Data Exchange (ETDEWEB)

    Mirza, S Yu; Soldatov, A N; Sukhanov, V B

    1983-10-01

    An experimental study was made for determining the characteristics of dye lasers with distributed feedback, not requiring intricate resonator structures, and the feasibility of their pumping with radiation from a metal-vapor laser. The experiments were performed with five different dyes lasing in the yellow-red (510.6 - 578.2 nm) range of the spectrum: rhodamine 110, 6G, S and ocazine 17,1 in ethyl alcohol solution. The optical equipment included a copper-vapor pumping laser with the gas-discharge tube inside a telescopic resonator of the unstable type. Pumping pulses of 20 ns duration were generated at 510.6 and 578.2 nm wavelengths and a 4 kHz repetition rate. The pumping power was varied by means of an interference filter smoothly adjustable through rotation. The pumping laser beam was focused by a cylindrical lens on the dye cell. At optimum dye concentrations, corresponding to a maximum attainable emission power, dye concentrate was added into the circulation system for determining the dependence of the pumping threshold power on the dye concentration. Also measured were the dependence of the emission efficiency on the pumping power and the tuning range of each dye laser. The efficiency was found to remain constant over the pumping power range from threshold level to eight times higher level. The results reveal different angles of laser beam divergence in the vertical plane and in the horizontal plane, the divergence angle being four times larger in the vertical plane. The conversion efficiency increased, without significant changes in spectral characteristics, with a single annular reflector instead of two reflectors. 9 references, 4 figures, 1 table.

  4. Non-fragile observer-based output feedback control for polytopic uncertain system under distributed model predictive control approach

    Science.gov (United States)

    Zhu, Kaiqun; Song, Yan; Zhang, Sunjie; Zhong, Zhaozhun

    2017-07-01

    In this paper, a non-fragile observer-based output feedback control problem for the polytopic uncertain system under distributed model predictive control (MPC) approach is discussed. By decomposing the global system into some subsystems, the computation complexity is reduced, so it follows that the online designing time can be saved.Moreover, an observer-based output feedback control algorithm is proposed in the framework of distributed MPC to deal with the difficulties in obtaining the states measurements. In this way, the presented observer-based output-feedback MPC strategy is more flexible and applicable in practice than the traditional state-feedback one. What is more, the non-fragility of the controller has been taken into consideration in favour of increasing the robustness of the polytopic uncertain system. After that, a sufficient stability criterion is presented by using Lyapunov-like functional approach, meanwhile, the corresponding control law and the upper bound of the quadratic cost function are derived by solving an optimisation subject to convex constraints. Finally, some simulation examples are employed to show the effectiveness of the method.

  5. Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

    International Nuclear Information System (INIS)

    Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

    2008-01-01

    Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

  6. Study of gain-coupled distributed feedback laser based on high order surface gain-coupled gratings

    Science.gov (United States)

    Gao, Feng; Qin, Li; Chen, Yongyi; Jia, Peng; Chen, Chao; Cheng, LiWen; Chen, Hong; Liang, Lei; Zeng, Yugang; Zhang, Xing; Wu, Hao; Ning, Yongqiang; Wang, Lijun

    2018-03-01

    Single-longitudinal-mode, gain-coupled distributed feedback (DFB) lasers based on high order surface gain-coupled gratings are achieved. Periodic surface metal p-contacts with insulated grooves realize gain-coupled mechanism. To enhance gain contrast in the quantum wells without the introduction of effective index-coupled effect, groove length and depth were well designed. Our devices provided a single longitudinal mode with the maximum CW output power up to 48.8 mW/facet at 971.31 nm at 250 mA without facet coating, 3dB linewidth (39 dB). Optical bistable characteristic was observed with a threshold current difference. Experimentally, devices with different cavity lengths were contrasted on power-current and spectrum characteristics. Due to easy fabrication technique and stable performance, it provides a method of fabricating practical gain-coupled distributed feedback lasers for commercial applications.

  7. Fiber-distributed feedback lasers for high-speed wavelength-division multiplexed networks

    DEFF Research Database (Denmark)

    Sejka, Milan; Hübner, Jörg; Varming, Poul

    1996-01-01

    Summary form only given. In conclusion, we have demonstrated that fiber DFB lasers constitute an excellent alternative to commercially available semiconductor DFB lasers. We have also shown that two fiber DFB lasers can be spliced together without any BER power penalty. Therefore, we suggest...... the possibility of using a single pump source for pumping a WDM laser array consisting of a number of fiber lasers spliced in series....

  8. Effects of the inversion layer thickness and 10B distribution in it on the characteristics of ion-doped semiconductor neutron counters

    International Nuclear Information System (INIS)

    Diasamidze, Eh.M.; Solov'ev, Yu.A.; Shmakov, A.N.

    1984-01-01

    The technique for calculating the dependence of energy spectrum of the 10 B(n, α) 7 Li reaction products in the thickness of the inversion layer in a semiconductor counter fabricated using the diffusion method is proposed. The inversion layer is formed as a result of the 10 B ion implantation into n-type silicon. The cases of uniform and Gaussian distributions of 10 B impurity are considered. Corrections for neutron fluence calculation by α-peak, taking into account α-particle absorption in the inversion layer are obtained. It is concluded that the suggested calculational technique can be used for semiconductor counters fabricated by the diffusion method

  9. On the Use of Fine Distributed Moderating Material to Enhance Feedback Coefficients in Fast Reactors

    International Nuclear Information System (INIS)

    Merk, B.

    2012-01-01

    Conclusions and outlook: • Use of moderating material to enhance feedback coefficients in SFR: • Creation of a new degree of freedom for SFR design; • Good opportunities for the compensation of the effects due to transmutation fuels; • No major influence on Am incinieration; • Major problem is the thermal stability; • Stability up to ~1300°C by use of YH

  10. The vertical distribution of climate forcings and feedbacks from the surface to top of atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Previdi, Michael [Columbia University, Lamont-Doherty Earth Observatory, Palisades, NY (United States); Liepert, Beate G. [NorthWest Research Associates, Redmond, WA (United States)

    2012-08-15

    The radiative forcings and feedbacks that determine Earth's climate sensitivity are typically defined at the top-of-atmosphere (TOA) or tropopause, yet climate sensitivity itself refers to a change in temperature at the surface. In this paper, we describe how TOA radiative perturbations translate into surface temperature changes. It is shown using first principles that radiation changes at the TOA can be equated with the change in energy stored by the oceans and land surface. This ocean and land heat uptake in turn involves an adjustment of the surface radiative and non-radiative energy fluxes, with the latter being comprised of the turbulent exchange of latent and sensible heat between the surface and atmosphere. We employ the radiative kernel technique to decompose TOA radiative feedbacks in the IPCC Fourth Assessment Report climate models into components associated with changes in radiative heating of the atmosphere and of the surface. (We consider the equilibrium response of atmosphere-mixed layer ocean models subjected to an instantaneous doubling of atmospheric CO{sub 2}). It is shown that most feedbacks, i.e., the temperature, water vapor and cloud feedbacks, (as well as CO{sub 2} forcing) affect primarily the turbulent energy exchange at the surface rather than the radiative energy exchange. Specifically, the temperature feedback increases the surface turbulent (radiative) energy loss by 2.87 W m{sup -2} K{sup -1} (0.60 W m{sup -2} K{sup -1}) in the multimodel mean; the water vapor feedback decreases the surface turbulent energy loss by 1.07 W m{sup -2} K{sup -1} and increases the surface radiative heating by 0.89 W m{sup -2} K{sup -1}; and the cloud feedback decreases both the turbulent energy loss and the radiative heating at the surface by 0.43 and 0.24 W m{sup -2} K{sup -1}, respectively. Since changes to the surface turbulent energy exchange are dominated in the global mean sense by changes in surface evaporation, these results serve to highlight

  11. The effect of body bias of the metal-oxide-semiconductor field-effect transistor in the resistive network on spatial current distribution in a bio-inspired complementary metal-oxide-semiconductor vision chip

    Science.gov (United States)

    Kong, Jae-Sung; Hyun, Hyo-Young; Seo, Sang-Ho; Shin, Jang-Kyoo

    2008-11-01

    Complementary metal-oxide-semiconductor (CMOS) vision chips for edge detection based on a resistive circuit have recently been developed. These chips help in the creation of neuromorphic systems of a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends predominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the metal-oxide-semiconductor field-effect transistor for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160 × 120 CMOS vision chips have been fabricated using a standard CMOS technology. The experimental results nicely match our prediction.

  12. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

  13. Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

    Science.gov (United States)

    Ripamonti, Giancarlo; Lacaita, Andrea L.

    1993-03-01

    The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

  14. Net Metering and Market Feedback Loops: Exploring the Impact of Retail Rate Design on Distributed PV Deployment

    Energy Technology Data Exchange (ETDEWEB)

    Darghouth, Naïm R. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Wiser, Ryan [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Barbose, Galen [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Mills, Andrew [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2015-01-13

    The substantial increase in deployment of customer-sited solar photovoltaics (PV) in the United States has been driven by a combination of steeply declining costs, financing innovations, and supportive policies. Among those supportive policies is net metering, which in most states effectively allows customers to receive compensation for distributed PV generation at the full retail electricity price. The current design of retail electricity rates and the presence of net metering have elicited concerns that the possible under-recovery of fixed utility costs from PV system owners may lead to a feedback loop of increasing retail prices that accelerate PV adoption and further rate increases. However, a separate and opposing feedback loop could offset this effect: increased PV deployment may lead to a shift in the timing of peak-period electricity prices that could reduce the bill savings received under net metering where time-varying retail electricity rates are used, thereby dampening further PV adoption. In this paper, we examine the impacts of these two competing feedback dynamics on U.S. distributed PV deployment through 2050 for both residential and commercial customers, across states. Our results indicate that, at the aggregate national level, the two feedback effects nearly offset one another and therefore produce a modest net effect, although their magnitude and direction vary by customer segment and by state. We also model aggregate PV deployment trends under various rate designs and net-metering rules, accounting for feedback dynamics. Our results demonstrate that future adoption of distributed PV is highly sensitive to retail rate structures. Whereas flat, time-invariant rates with net metering lead to higher aggregate national deployment levels than the current mix of rate structures (+5% in 2050), rate structures with higher monthly fixed customer charges or PV compensation at levels lower than the full retail rate can dramatically erode aggregate customer

  15. Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating

    Science.gov (United States)

    Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki

    2018-03-01

    We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (current and temperature ranges.

  16. Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy.

    Science.gov (United States)

    Sasaki, Hirokazu; Otomo, Shinya; Minato, Ryuichiro; Yamamoto, Kazuo; Hirayama, Tsukasa

    2014-06-01

    Phase-shifting electron holography and Lorentz microscopy were used to map dopant distributions in GaAs compound semiconductors with step-like dopant concentration. Transmission electron microscope specimens were prepared using a triple beam focused ion beam (FIB) system, which combines a Ga ion beam, a scanning electron microscope, and an Ar ion beam to remove the FIB damaged layers. The p-n junctions were clearly observed in both under-focused and over-focused Lorentz microscopy images. A phase image was obtained by using a phase-shifting reconstruction method to simultaneously achieve high sensitivity and high spatial resolution. Differences in dopant concentrations between 1 × 10(19) cm(-3) and 1 × 10(18) cm(-3) regions were clearly observed by using phase-shifting electron holography. We also interpreted phase profiles quantitatively by considering inactive layers induced by ion implantation during the FIB process. The thickness of an inactive layer at different dopant concentration area can be measured from the phase image. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  17. Enhancing the Performance of Distributed Feedback Dye Lasers and Plasmonic V-grooves for Lab-on-a-chip Systems

    DEFF Research Database (Denmark)

    Smith, Cameron

    The ability to perform laboratory operations in compact systems is not only advantageous for the development of diagnostics tools and their production, but also provides unique opportunities to explore the natural world on the micro- and nanoscale. To this end, we focus on two optical schemes: 1...... to the advantages they bring to lab-on-a-chip systems.......) polymer-based distributed feedback (DFB) dye lasers, and 2) plasmonic V-grooves. Regarding the first, DFB dye lasers are well suited to serve as compact, minimal analyte volume and highly sensitive refractive index sensors, where changes occurring in an analyte result in readily measurable shifts...

  18. A novel feedback control system – Controlling the material flow in deep drawing using distributed blank-holder force

    DEFF Research Database (Denmark)

    Endelt, Benny Ørtoft; Tommerup, Søren; Danckert, Joachim

    2013-01-01

    The performance of a feedback control system is often limited by the quality of the model on which it is based, and often the controller design is based on trial and error due to insufficient modeling capabilities. A framework is proposed where the controller design is based on classical state...... on a deep drawing operation where the objective was to control material flow throughout the part using only spatial information regarding flange draw-in. The control system controls both the magnitude and distribution of the blank-holder force. The methodology proved stable and flexible with respect...

  19. Pseudodifferential Perturbations and Stabilization of Distributed Parameter Systems: Dirichlet Feedback Control Problems

    DEFF Research Database (Denmark)

    Pedersen, Michael

    1991-01-01

    The stabilization problems for parabolic and hyperbolic partial differential equations with Dirichlet boundary condition are considered. The systems are stabilized by a boundary feedback in(1) The operator equation,(2) The boundary condition,(3) Both the operator equation and the boundary condition...... turns out to be a shortcut to some of the stabilization results of Lasiecka and Triggiani in [J. Differential Equations, 47 (1983), pp. 245-272], [SIAM J. Control Optim., 21(1983), pp. 766-802], and [Appl. Math. Optim., 8(1981), pp. 1-37], and it illuminates to some extent how a change of boundary...

  20. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  1. Transient queue-size distribution in a finite-capacity queueing system with server breakdowns and Bernoulli feedback

    Science.gov (United States)

    Kempa, Wojciech M.

    2017-12-01

    A finite-capacity queueing system with server breakdowns is investigated, in which successive exponentially distributed failure-free times are followed by repair periods. After the processing a customer may either rejoin the queue (feedback) with probability q, or definitely leave the system with probability 1 - q. The system of integral equations for transient queue-size distribution, conditioned by the initial level of buffer saturation, is build. The solution of the corresponding system written for Laplace transforms is found using the linear algebraic approach. The considered queueing system can be successfully used in modelling production lines with machine failures, in which the parameter q may be considered as a typical fraction of items demanding corrections. Morever, this queueing model can be applied in the analysis of real TCP/IP performance, where q stands for the fraction of packets requiring retransmission.

  2. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  3. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

  4. Polycrystalline semiconductor probes for monitoring the density distribution of an intense thermal neutron flux in nuclear reactors

    International Nuclear Information System (INIS)

    Graul, J.; Mueller, R.G.; Wagner, E.

    1975-05-01

    The applicability of semiconductor detectors for high thermal neutron flux densities is theoretically estimated and experimentally examined. For good thermal stability and low radiation capture rate silicon carbide is used as semiconductor material, produced in polycristalline layers to achieve high radiation resistance. The relations between crystallinity, photoelectric sensitivity and radiation resistance are shown. The radiation resistance of polycrystalline SiC-probes is approximately 100 times greater than that of conventional single crystal radiation detectors. For thermal neutron measurement they can be used in the flux range of approx. 10 10 13 (cm -2 sec -1 ) with operation times of 1.6 a >= tsub(b,max) >= 30 d, resp. (orig.) [de

  5. Output feedback control of heat transport mechanisms in parabolic distributed solar collectors

    KAUST Repository

    Elmetennani, Shahrazed; Kirati, Taous Meriem Laleg

    2016-01-01

    . The proposed control strategy is derived using the distributed physical model of the system to avoid the loss of information due to model approximation schemes. The system dynamics are driven to follow reference dynamics defined by a transport equation with a

  6. Passivity-Based Automated Design of Stable Multi-Feedback Distributed Power Delivery Systems

    Science.gov (United States)

    2017-03-01

    power ility criterion tomated desi designing a shown in Fig gulator is syn ogy and desig is used durin ber and lo upplies in th stem. During livery...Nu co ,736 318 578 776 ng scenario i y system. Th ted system i rent loads. I power supplie ocation of th fies the qualit the distribute tomated

  7. GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

    Science.gov (United States)

    Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

    2011-01-31

    We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

  8. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

    2010-01-01

    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

  9. Enhancement of high-energy distribution tail in Monte Carlo semiconductor simulations using a Variance Reduction Scheme

    Directory of Open Access Journals (Sweden)

    Vincenza Di Stefano

    2009-11-01

    Full Text Available The Multicomb variance reduction technique has been introduced in the Direct Monte Carlo Simulation for submicrometric semiconductor devices. The method has been implemented in bulk silicon. The simulations show that the statistical variance of hot electrons is reduced with some computational cost. The method is efficient and easy to implement in existing device simulators.

  10. Real-time two-dimensional imaging of potassium ion distribution using an ion semiconductor sensor with charged coupled device technology.

    Science.gov (United States)

    Hattori, Toshiaki; Masaki, Yoshitomo; Atsumi, Kazuya; Kato, Ryo; Sawada, Kazuaki

    2010-01-01

    Two-dimensional real-time observation of potassium ion distributions was achieved using an ion imaging device based on charge-coupled device (CCD) and metal-oxide semiconductor technologies, and an ion selective membrane. The CCD potassium ion image sensor was equipped with an array of 32 × 32 pixels (1024 pixels). It could record five frames per second with an area of 4.16 × 4.16 mm(2). Potassium ion images were produced instantly. The leaching of potassium ion from a 3.3 M KCl Ag/AgCl reference electrode was dynamically monitored in aqueous solution. The potassium ion selective membrane on the semiconductor consisted of plasticized poly(vinyl chloride) (PVC) with bis(benzo-15-crown-5). The addition of a polyhedral oligomeric silsesquioxane to the plasticized PVC membrane greatly improved adhesion of the membrane onto Si(3)N(4) of the semiconductor surface, and the potential response was stabilized. The potential response was linear from 10(-2) to 10(-5) M logarithmic concentration of potassium ion. The selectivity coefficients were K(K(+),Li(+))(pot) = 10(-2.85), K(K(+),Na(+))(pot) = 10(-2.30), K(K(+),Rb(+))(pot) =10(-1.16), and K(K(+),Cs(+))(pot) = 10(-2.05).

  11. Feedback control for distributed heat transfer mechanisms in direct-contact membrane distillation system

    KAUST Repository

    Eleiwi, Fadi; N'Doye, Ibrahima; Laleg-Kirati, Taous-Meriem

    2015-01-01

    In this paper, the problem of stabilization and production rate reference tracking for a Direct-Contact Membrane Distillation (DCMD) system is addressed. Sufficient conditions for the asymptotic and exponential stabilization for DCMD system are presented using the Gronwall-Bellman lemma and Linear Matrix Inequalities (LMIs) approaches, respectively. A nonlinear observer is then proposed to estimate the temperature distribution among the DCMD domain. This contributes to propose a reference production rate control design for the DCMD process via observer-based output control approach. Finally, numerical simulations are given to show the effectiveness of the proposed methods.

  12. Feedback control for distributed heat transfer mechanisms in direct-contact membrane distillation system

    KAUST Repository

    Eleiwi, Fadi

    2015-09-21

    In this paper, the problem of stabilization and production rate reference tracking for a Direct-Contact Membrane Distillation (DCMD) system is addressed. Sufficient conditions for the asymptotic and exponential stabilization for DCMD system are presented using the Gronwall-Bellman lemma and Linear Matrix Inequalities (LMIs) approaches, respectively. A nonlinear observer is then proposed to estimate the temperature distribution among the DCMD domain. This contributes to propose a reference production rate control design for the DCMD process via observer-based output control approach. Finally, numerical simulations are given to show the effectiveness of the proposed methods.

  13. Moving mesh finite element method for finite time extinction of distributed parameter systems with positive exponential feedback; Lokakarya Komputasi dalam Sains dan Teknologi Nuklir VI

    Energy Technology Data Exchange (ETDEWEB)

    Garnadi, A D [Department of Matematics, Bogor Institute of Agriculture, Bogor (Indonesia)

    1997-07-01

    In the distributed parameter systems with exponential feedback, non-global existence of solution is not always exist. For some positive initial values, there exist finite time T such that the solution goes to infinity, i.e. finite time extinction or blow-up. Here is present a numerical solution using Moving Mesh Finite Element to solve the distributed parameter systems with exponential feedback close to blow-up time. The numerical behavior of the mesh close to the time of extinction is the prime interest in this study.

  14. Soil Surface Organic Layers in Alaska's Arctic Foothills: Development, Distribution and Microclimatic Feedbacks

    Science.gov (United States)

    Baughman, C. A.; Mann, D. H.; Verbyla, D.; Valentine, D.; Kunz, M. L.; Heiser, P. A.

    2013-12-01

    Accumulated organic matter at the ground surface plays an important role in arctic ecosystems. These soil surface organic layers (SSOLs) influence temperature, moisture, and chemistry in the underlying mineral soil and, on a global basis, comprise enormous stores of labile carbon. Understanding the dynamics of SSOLs is prerequisite to modeling the responses of arctic ecosystem processes to climate changes. Here, we ask three questions regarding SSOLs in the Arctic Foothills in northern Alaska: 1) What environmental factors control their spatial distribution? 2) How long do they take to form? 3) What is the relationship between SSOL thickness and mineral soil temperature through the growing season? The best topographically-controlled predictors of SSOL thickness and spatial distribution are duration of sunlight during the growing-season, upslope drainage area, slope gradient, and elevation. SSOLs begin to form within several decades following disturbance but require 500-700 years to reach equilibrium states. Once formed, mature SSOLs lower peak growing-season temperature and mean annual temperature in the underlying mineral horizon by 8° and 3° C respectively, which reduces available growing degree days within the upper mineral soil by nearly 80%. How ongoing climate change in northern Alaska will affect the region's SSOLs is an open and potentially crucial question.

  15. The effects of baryon physics, black holes and active galactic nucleus feedback on the mass distribution in clusters of galaxies

    Science.gov (United States)

    Martizzi, Davide; Teyssier, Romain; Moore, Ben; Wentz, Tina

    2012-06-01

    The spatial distribution of matter in clusters of galaxies is mainly determined by the dominant dark matter component; however, physical processes involving baryonic matter are able to modify it significantly. We analyse a set of 500 pc resolution cosmological simulations of a cluster of galaxies with mass comparable to Virgo, performed with the AMR code RAMSES. We compare the mass density profiles of the dark, stellar and gaseous matter components of the cluster that result from different assumptions for the subgrid baryonic physics and galaxy formation processes. First, the prediction of a gravity-only N-body simulation is compared to that of a hydrodynamical simulation with standard galaxy formation recipes, and then all results are compared to a hydrodynamical simulation which includes thermal active galactic nucleus (AGN) feedback from supermassive black holes (SMBHs). We find the usual effects of overcooling and adiabatic contraction in the run with standard galaxy formation physics, but very different results are found when implementing SMBHs and AGN feedback. Star formation is strongly quenched, producing lower stellar densities throughout the cluster, and much less cold gas is available for star formation at low redshifts. At redshift z= 0 we find a flat density core of radius 10 kpc in both the dark and stellar matter density profiles. We speculate on the possible formation mechanisms able to produce such cores and we conclude that they can be produced through the coupling of different processes: (I) dynamical friction from the decay of black hole orbits during galaxy mergers; (II) AGN-driven gas outflows producing fluctuations of the gravitational potential causing the removal of collisionless matter from the central region of the cluster; (III) adiabatic expansion in response to the slow expulsion of gas from the central region of the cluster during the quiescent mode of AGN activity.

  16. Real-space distribution of the Hall current densities and their spin polarization in nonmagnetic zine-blende semiconductors

    Czech Academy of Sciences Publication Activity Database

    Středa, Pavel; Drchal, Václav

    2012-01-01

    Roč. 86, č. 19 (2012), "195204-1"-"195204-8" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/1228 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : nonmagnetic semiconductors * spin Hall currents Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012

  17. Rateless feedback codes

    DEFF Research Database (Denmark)

    Sørensen, Jesper Hemming; Koike-Akino, Toshiaki; Orlik, Philip

    2012-01-01

    This paper proposes a concept called rateless feedback coding. We redesign the existing LT and Raptor codes, by introducing new degree distributions for the case when a few feedback opportunities are available. We show that incorporating feedback to LT codes can significantly decrease both...... the coding overhead and the encoding/decoding complexity. Moreover, we show that, at the price of a slight increase in the coding overhead, linear complexity is achieved with Raptor feedback coding....

  18. Audio Feedback -- Better Feedback?

    Science.gov (United States)

    Voelkel, Susanne; Mello, Luciane V.

    2014-01-01

    National Student Survey (NSS) results show that many students are dissatisfied with the amount and quality of feedback they get for their work. This study reports on two case studies in which we tried to address these issues by introducing audio feedback to one undergraduate (UG) and one postgraduate (PG) class, respectively. In case study one…

  19. Single mode solid state distributed feedback dye laser fabricated by grey scale electron beam lithography on dye doped SU-8 resist

    DEFF Research Database (Denmark)

    Balslev, Søren; Rasmussen, Torben; Shi, Peixiong

    2005-01-01

    We demonstrate grey scale electron beam lithography on functionalized SU-8 resist for fabrication of single mode solid state dye laser devices. The resist is doped with Rhodamine 6G perchlorate and the lasers are based on a first order Bragg grating distributed feedback resonator. The lasers...

  20. Frequency Locking and Monitoring Based on Bi-directional Terahertz Radiation of a 3rd-Order Distributed Feedback Quantum Cascade Laser

    NARCIS (Netherlands)

    Van Marrewijk, N.; Mirzaei, B.; Hayton, D.; Gao, J.R.; Kao, T.Y.; Hu, Q.; Reno, J.L.

    2015-01-01

    We have performed frequency locking of a dual, forward reverse emitting third-order distributed feedback quantum cascade laser (QCL) at 3.5 THz. By using both directions of THz emission in combination with two gas cells and two power detectors, we can for the first time perform frequency

  1. Phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser using a room-temperature superlattice harmonic mixer

    NARCIS (Netherlands)

    Hayton, D. J.; Khudchencko, A.; Pavelyev, D. G.; Hovenier, J. N.; Baryshev, A.; Gao, J. R.; Kao, T. Y.; Hu, Q.; Reno, J. L.; Vaks, V.

    2013-01-01

    We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60 dB is observed in the intermediate frequency

  2. Phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser using a room-temperature superlattice harmonic mixer

    NARCIS (Netherlands)

    Hayton, D.J.; Khudchenko, A.; Pavelyev, D.G.; Hovenier, J.N.; Baryshev, A.; Gao, J.R.; Kao, T.Y.; Hu, Q.; Reno, J.L.; Vaks, V.

    2013-01-01

    We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60?dB is observed in the intermediate frequency

  3. Self-reflection in a system of excitons and biexcitons in semiconductors

    International Nuclear Information System (INIS)

    Khadzhi, P I; Lyakhomskaya, K D

    1999-01-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted. (nonlinear optical phenomena)

  4. NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

    Science.gov (United States)

    Khadzhi, P. I.; Lyakhomskaya, K. D.

    1999-10-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

  5. Toward continuous-wave operation of organic semiconductor lasers

    Science.gov (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

    2017-01-01

    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  6. Real time ammonia detection in exhaled human breath using a distributed feedback quantum cascade laser based sensor

    Science.gov (United States)

    Lewicki, Rafał; Kosterev, Anatoliy A.; Thomazy, David M.; Risby, Terence H.; Solga, Steven; Schwartz, Timothy B.; Tittel, Frank K.

    2011-01-01

    A continuous wave, thermoelectrically cooled, distributed feedback quantum cascade laser (DFB-QCL) based sensor platform for the quantitative detection of ammonia (NH3) concentrations present in exhaled human breath is reported. The NH3 concentration measurements are performed with a 2f wavelength modulation quartz enhanced photoacoustic spectroscopy (QEPAS) technique, which is very well suited for real time breath analysis, due to the fast gas exchange inside a compact QEPAS gas cell. An air-cooled DFB-QCL was designed to target the interference-free NH3 absorption line located at 967.35 cm-1 (λ~10.34 μm). The laser is operated at 17.5 °C, emitting ~ 24 mW of optical power at the selected wavelength. A 1σ minimum detectable concentration of ammonia for the line-locked NH3 sensor is ~ 6 ppb with 1 sec time resolution. The NH3 sensor, packaged in a 12"x14"x10" housing, is currently installed at a medical breath research center in Bethlehem, PA and tested as an instrument for non-invasive verification of liver and kidney disorders based on human breath samples.

  7. Single-mode distributed feedback laser operation with no dependence on the morphology of the gain medium

    Energy Technology Data Exchange (ETDEWEB)

    Umar, Muhammad [Department of Energy Systems Research, Ajou University, Suwon (Korea, Republic of); Min, Kyungtaek [Department of Energy Systems Research, Ajou University, Suwon (Korea, Republic of); Inter-university Semiconductor Research Center, Seoul National University (Korea, Republic of); Jeon, Heonsu [Department of Physics and Astronomy, Seoul National University (Korea, Republic of); Kim, Sunghwan [Department of Energy Systems Research, Ajou University, Suwon (Korea, Republic of); Department of Physics, Ajou University, Suwon (Korea, Republic of)

    2017-06-15

    Organic distributed feedback (DFB) lasers can be useful photonic tools for biological applications where the roles of organic materials are important, because highly coherent single mode emission with broad tuning range can be obtained. However, the formulaic structures of organic lasers, and the uses of gain media as resonators themselves, are not suitable for inducing laser emission from irregular shaped gain media, such as dye-staining cells and tissues. Here, we report a reusable photonic template comprising an exceedingly thin and discrete titanium dioxide (TiO{sub 2}) layer on a one-dimensional (1D) quartz grating to induce single mode DFB lasing from a variety of states of optical gain media. Using the same template, the external gain media of optically thick and thin casted film, liquid, and a free-standing thick film reveal single mode lasing with reliable performance. Numerical simulations demonstrate that the 25-nm thick TiO{sub 2} disconnected grating lines support a spatially confined DFB mode in the vertical direction, even under no index difference between superstrate and substrate. Additionally, not using the typical waveguide gain layer promises high sensitivity and detection limit in refractometric sensing. These results suggest that the photonic structure may serve as a versatile sensing platform for bioapplications. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  9. The effect of host star spectral energy distribution and ice-albedo feedback on the climate of extrasolar planets.

    Science.gov (United States)

    Shields, Aomawa L; Meadows, Victoria S; Bitz, Cecilia M; Pierrehumbert, Raymond T; Joshi, Manoj M; Robinson, Tyler D

    2013-08-01

    Planetary climate can be affected by the interaction of the host star spectral energy distribution with the wavelength-dependent reflectivity of ice and snow. In this study, we explored this effect with a one-dimensional (1-D), line-by-line, radiative transfer model to calculate broadband planetary albedos as input to a seasonally varying, 1-D energy balance climate model. A three-dimensional (3-D) general circulation model was also used to explore the atmosphere's response to changes in incoming stellar radiation, or instellation, and surface albedo. Using this hierarchy of models, we simulated planets covered by ocean, land, and water-ice of varying grain size, with incident radiation from stars of different spectral types. Terrestrial planets orbiting stars with higher near-UV radiation exhibited a stronger ice-albedo feedback. We found that ice extent was much greater on a planet orbiting an F-dwarf star than on a planet orbiting a G-dwarf star at an equivalent flux distance, and that ice-covered conditions occurred on an F-dwarf planet with only a 2% reduction in instellation relative to the present instellation on Earth, assuming fixed CO(2) (present atmospheric level on Earth). A similar planet orbiting the Sun at an equivalent flux distance required an 8% reduction in instellation, while a planet orbiting an M-dwarf star required an additional 19% reduction in instellation to become ice-covered, equivalent to 73% of the modern solar constant. The reduction in instellation must be larger for planets orbiting cooler stars due in large part to the stronger absorption of longer-wavelength radiation by icy surfaces on these planets in addition to stronger absorption by water vapor and CO(2) in their atmospheres, which provides increased downwelling longwave radiation. Lowering the IR and visible-band surface ice and snow albedos for an M-dwarf planet increased the planet's climate stability against changes in instellation and slowed the descent into global ice

  10. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  11. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  12. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    Science.gov (United States)

    Laminack, William; Gole, James

    2015-12-01

    A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  13. Community-level plant-soil feedbacks explain landscape distribution of native and non-native plants.

    Science.gov (United States)

    Kulmatiski, Andrew

    2018-02-01

    Plant-soil feedbacks (PSFs) have gained attention for their potential role in explaining plant growth and invasion. While promising, most PSF research has measured plant monoculture growth on different soils in short-term, greenhouse experiments. Here, five soil types were conditioned by growing one native species, three non-native species, or a mixed plant community in different plots in a common-garden experiment. After 4 years, plants were removed and one native and one non-native plant community were planted into replicate plots of each soil type. After three additional years, the percentage cover of each of the three target species in each community was measured. These data were used to parameterize a plant community growth model. Model predictions were compared to native and non-native abundance on the landscape. Native community cover was lowest on soil conditioned by the dominant non-native, Centaurea diffusa , and non-native community cover was lowest on soil cultivated by the dominant native, Pseudoroegneria spicata . Consistent with plant growth on the landscape, the plant growth model predicted that the positive PSFs observed in the common-garden experiment would result in two distinct communities on the landscape: a native plant community on native soils and a non-native plant community on non-native soils. In contrast, when PSF effects were removed, the model predicted that non-native plants would dominate all soils, which was not consistent with plant growth on the landscape. Results provide an example where PSF effects were large enough to change the rank-order abundance of native and non-native plant communities and to explain plant distributions on the landscape. The positive PSFs that contributed to this effect reflected the ability of the two dominant plant species to suppress each other's growth. Results suggest that plant dominance, at least in this system, reflects the ability of a species to suppress the growth of dominant competitors

  14. Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser

    Science.gov (United States)

    Raghunathan, R.; Olinger, J.; Hurtado, A.; Grillot, F.; Kovanis, V.; Lester, L. F.

    2015-03-01

    Recent work has shown the Quantum Dot (QD) material system to be well-suited to support dual-mode lasing. In particular, optical injection from a master laser (ML) into the residual Fabry-Perot (FP) modes of a 1310 nm Quantum Dot Distributed Feedback (QD-DFB) laser has been recently demonstrated to offer a highly reliable platform for stable dual-mode lasing operation. External controls on the ML, such as operating temperature and bias current, can be used to precisely adjust the spacing between the two lasing modes. This tunability of modeseparation is very promising for a range of applications requiring the generation of microwave, millimeter wave and terahertz signals. Considering the versatility and utility of such a scheme, it is imperative to acquire a deeper understanding of the factors that influence the dual-mode lasing process, in order to optimize performance. Toward this end, this paper seeks to further our understanding of the optically-injected dual-mode lasing mechanism. For fixed values of optical power injected into each FP residual mode and wavelength detuning, the dual-mode lasing characteristics are analyzed with regard to important system parameters such as the position and the intensity of the injected residual mode (relative to the Bragg and the other residual FP modes of the device) for two similarly-fabricated QD-DFBs. Results indicate that for dual mode lasing spaced less than 5 nm apart, the relative intensity of the injected FP mode and intracavity noise levels are critical factors in determining dual mode lasing behavior. Insight into the dual-mode lasing characteristics could provide an important design guideline for the master and QD-DFB slave laser cavities.

  15. Improving lower limb weight distribution asymmetry during the squat using Nintendo Wii Balance Boards and real-time feedback.

    Science.gov (United States)

    McGough, Rian; Paterson, Kade; Bradshaw, Elizabeth J; Bryant, Adam L; Clark, Ross A

    2012-01-01

    Weight-bearing asymmetry (WBA) may be detrimental to performance and could increase the risk of injury; however, detecting and reducing it is difficult in a field setting. This study assessed whether a portable and simple-to-use system designed with multiple Nintendo Wii Balance Boards (NWBBs) and customized software can be used to evaluate and improve WBA. Fifteen elite Australian Rules Footballers and 32 age-matched, untrained participants were tested for measures of WBA while squatting. The NWBB and customized software provided real-time visual feedback of WBA during half of the trials. Outcome measures included the mean mass difference (MMD) between limbs, interlimb symmetry index (SI), and percentage of time spent favoring a single limb (TFSL). Significant reductions in MMD (p = 0.028) and SI (p = 0.007) with visual feedback were observed for the entire group data. Subgroup analysis revealed significant reductions in MMD (p = 0.047) and SI (p = 0.026) with visual feedback in the untrained sample; however, the reductions in the trained sample were nonsignificant. The trained group showed significantly less WBA for TFSL under both visual conditions (no feedback: p = 0.015, feedback: p = 0.017). Correlation analysis revealed that participants with high levels of WBA had the greatest response to feedback (p professional athletes do not possess the same magnitude of WBA. Inexpensive, portable, and widely available gaming technology may be used to evaluate and improve WBA in clinical and sporting settings.

  16. A realistic analysis of the phonon growth characteristics in a degenerate semiconductor using a simplified model of Fermi-Dirac distribution

    Science.gov (United States)

    Basu, A.; Das, B.; Middya, T. R.; Bhattacharya, D. P.

    2017-01-01

    The phonon growth characteristic in a degenerate semiconductor has been calculated under the condition of low temperature. If the lattice temperature is high, the energy of the intravalley acoustic phonon is negligibly small compared to the average thermal energy of the electrons. Hence one can traditionally assume the electron-phonon collisions to be elastic and approximate the Bose-Einstein (B.E.) distribution for the phonons by the simple equipartition law. However, in the present analysis at the low lattice temperatures, the interaction of the non equilibrium electrons with the acoustic phonons becomes inelastic and the simple equipartition law for the phonon distribution is not valid. Hence the analysis is made taking into account the inelastic collisions and the complete form of the B.E. distribution. The high-field distribution function of the carriers given by Fermi-Dirac (F.D.) function at the field dependent carrier temperature, has been approximated by a well tested model that apparently overcomes the intrinsic problem of correct evaluation of the integrals involving the product and powers of the Fermi function. Hence the results thus obtained are more reliable compared to the rough estimation that one may obtain from using the exact F.D. function, but taking recourse to some over simplified approximations.

  17. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    Energy Technology Data Exchange (ETDEWEB)

    Laminack, William [Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Gole, James, E-mail: James.Gole@physics.gatech.edu [Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Department of Mechanical Engineering, Georgia Tech, Atlanta, GA 30332 (United States)

    2015-12-30

    Graphical abstract: Visual representation of the PS interface interacting with mixed gas configurations. The red dots correspond to nanostructured metal oxides. Each combination of distinct molecules are labeled below the pores, which are oversized in the figure. - Highlights: • First study of mixed gas analytes interacting with a micro-porous silicon substrate. • Responses are represented by a newly developed response absorption isotherm. • This isotherm is modeled on the basis of the Fermi distribution function. • The developing IHSAB concept explains multi-gas analyte–analyte interactions. - Abstract: A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte–interface, and analyte–analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  18. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  19. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  20. Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II-VI based semiconductor disk lasers

    International Nuclear Information System (INIS)

    De Jesus, Joel; Gayen, Swapan K.; Garcia, Thor A.; Tamargo, Maria C.; Kartazaev, Vladimir; Jones, Brynmor E.; Schlosser, Peter J.; Hastie, Jennifer E.

    2015-01-01

    We report the structural and optical properties of molecular beam epitaxy grown II-VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540-570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∝560 nm. We estimate that a DBR with ∝40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II-VI MQW structures on InP substrates for the development of SDLs operational in the green-yellow wavelength range. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

    Science.gov (United States)

    Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

    2002-05-01

    The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

  2. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  3. Optical feedback structures and methods of making

    Science.gov (United States)

    None

    2014-11-18

    An optical resonator can include an optical feedback structure disposed on a substrate, and a composite including a matrix including a chromophore. The composite disposed on the substrate and in optical communication with the optical feedback structure. The chromophore can be a semiconductor nanocrystal. The resonator can provide laser emission when excited.

  4. The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

    International Nuclear Information System (INIS)

    Ahmed, N.A.G.; Christodoulides, C.E.; Carter, G.; Nobes, M.J.; Titov, A.I.

    1980-01-01

    Low angle exit (9 0 ) Rutherford backscattering geometry and channelling of 2 MeV 4 He + are employed to investigate the disorder depth profiles created by 40 keV N + implantation in (111) silicon and (100) GaAs targets. Parameters which can influence the disordering rate and its spatial distribution, such as ion fluence flux, substrate type and substrate temperature are examined. Under certain implantation conditions, the damage profile distributions are asymmetric - exhibiting a bimodal form in silicon targets or confined much closer to the GaAs surface than the normally expected mean range of 40 keV N + ions. (orig.)

  5. The determination of gold depth distribution in semiconductor silicon-potential interferences inherent in NAA by radiation damages

    International Nuclear Information System (INIS)

    Rudolph, P.; Lange, A.; Flachowsky, J.

    1986-01-01

    Gold is used quite extensively to control the charge storage time of high speed diodes and transistors. Therefore, the diffusion of gold into silicon wafers of finite thickness is important in the design and fabrication of these devices. Therefore it is necessary to estimate exactly concentration and depth distribution of gold formed by gold doping. Usually, gold content and depth distribution has been estimate by neutron activation analysis with step by step etching techniques. But during the irradiation in a nuclear fuel reactor the silicon wafers undergo minute or pronounced radiation damages which may affect the depth profiles of gold concentration. (author)

  6. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  7. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  8. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  10. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  11. Enhancement of the static extinction ratio by using a dual-section distributed feedback laser integrated with an electro-absorption modulator

    Science.gov (United States)

    Cho, Chun-Hyung; Kim, Jongseong; Sung, Hyuk-Kee

    2016-09-01

    We report on the enhancement of the static extinction ratio by using a dual-section distributed feedback laser diode integrated with an electro-absorption modulator. A directly- modulated dual-section laser can provide improved modulation performance under a low bias level ( i.e., below the threshold level) compared with a standard directly-modulated laser. By combining the extinction ratio from a dual-section laser with that from an electro-absorption modulator section, a total extinction ratio of 49.6. dB are successfully achieved.

  12. Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

    Science.gov (United States)

    Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

    2007-10-15

    A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

  13. Localization and Imaging of Integrated Circuit Defect Using Simple Optical Feedback Detection

    Directory of Open Access Journals (Sweden)

    Vernon Julius Cemine

    2004-12-01

    Full Text Available High-contrast microscopy of semiconductor and metal edifices in integrated circuits is demonstrated by combining laser-scanning confocal reflectance microscopy, one-photon optical-beam-induced current (1P-OBIC imaging, and optical feedback detection via a commercially available semiconductor laser that also serves as the excitation source. The confocal microscope has a compact in-line arrangement with no external photodetector. Confocal and 1P-OBIC images are obtained simultaneously from the same focused beam that is scanned across the sample plane. Image pairs are processed to generate exclusive high-contrast distributions of the semiconductor, metal, and dielectric sites in a GaAs photodiode array sample. The method is then utilized to demonstrate defect localization and imaging in an integrated circuit.

  14. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-04-15

    The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

  15. High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser.

    Science.gov (United States)

    Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

    2016-07-15

    We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900-2000 nm.

  16. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  18. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  19. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  20. Fiber Bragg grating interrogation using wavelength modulated tunable distributed feedback lasers and a fiber-optic Mach-Zehnder interferometer.

    Science.gov (United States)

    Roy, Anirban; Chakraborty, Arup Lal; Jha, Chandan Kumar

    2017-04-20

    This paper demonstrates a technique of high-resolution interrogation of two fiber Bragg gratings (FBGs) with flat-topped reflection spectra centered on 1649.55 nm and 1530.182 nm with narrow line width tunable semiconductor lasers emitting at 1651.93 nm and 1531.52 nm, respectively. The spectral shift of the reflection spectrum in response to temperature and strain is accurately measured with a fiber-optic Mach-Zehnder interferometer that has a free spectral range of 0.0523 GHz and a broadband photodetector. Laser wavelength modulation and harmonic detection techniques are used to transform the gentle edges of the flat-topped FBG into prominent leading and trailing peaks that are up to five times narrower than the FBG spectrum. Either of these peaks can be used to accurately measure spectral shifts of the FBG reflection spectrum with a resolution down to a value of 0.47 pm. A digital signal processing board is used to measure the temperature-induced spectral shifts over the range of 30°C-80°C and strain-induced spectral shifts from 0  μϵ to 12,000  μϵ. The shift is linear in both cases with a temperature sensitivity of 12.8 pm/°C and strain sensitivity of 0.12  pm/μϵ. The distinctive feature of this technique is that it does not use an optical spectrum analyzer at any stage of its design or operation. It can be readily extended to all types of tunable diode lasers and is ideally suited for compact field instruments and for biomedical applications in stroke rehabilitation monitoring.

  1. Optimal allocation of reviewers for peer feedback

    DEFF Research Database (Denmark)

    Wind, David Kofoed; Jensen, Ulf Aslak; Jørgensen, Rasmus Malthe

    2017-01-01

    feedback to be effective students should give and receive useful feedback. A key challenge in peer feedback is allocating the feedback givers in a good way. It is important that reviewers are allocated to submissions such that the feedback distribution is fair - meaning that all students receive good......Peer feedback is the act of letting students give feedback to each other on submitted work. There are multiple reasons to use peer feedback, including students getting more feedback, time saving for teachers and increased learning by letting students reflect on work by others. In order for peer...... indicated the quality of the feedback. Using this model together with historical data we calculate the feedback-giving skill of each student and uses that as input to an allocation algorithm that assigns submissions to reviewers, in order to optimize the feedback quality for all students. We test...

  2. Stable single-mode distributed feedback quantum cascade lasers at λ ∼ 4.25 μm with low power consumption

    Science.gov (United States)

    Jia, Zhiwei; Wang, Lijun; Zhang, Jinchuan; Liu, Fengqi; Zhuo, Ning; Zhai, Shenqiang; Liu, Junqi; Wang, Zhanguo

    2016-10-01

    Short-wavelength (4.25 μm) distributed-feedback quantum cascade laser operating in continuous wave (cw) mode at room temperature with low power consumption was presented. Stable single-mode operation with a side-mode-suppression-ratio above 25 dB was maintained for the whole measured current and temperature range by enlarging gain difference and strong grating coupling. Because of the strong coupling, very low threshold current and power consumption were achieved. For a device of 9-μm-wide and 2-mm-long, the cw threshold current and power consumption at 293 K were as low as 126 mA and 1.45 W, respectively. All results above were from the device without using buried heterostructure geometry.

  3. CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode

    Science.gov (United States)

    Martin, R. D.; Forouhar, S.; Keo, S.; Lang, R. J.; Hunsperger, R. G.; Tiberio, R. C.; Chapman, P. F.

    1995-01-01

    Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etehed along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8/cm was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.

  4. Comparative analysis of frequency and noise characteristics of Fabry – Perot and distributed feedback laser diodes with external optical injection locking

    Energy Technology Data Exchange (ETDEWEB)

    Afonenko, A A; Dorogush, E S [Belarusian State University, Minsk (Belarus); Malyshev, S A; Chizh, A L [B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)

    2015-11-30

    Using a system of coupled travelling wave equations, in the small-signal regime we analyse frequency and noise characteristics of index- or absorption-coupled distributed feedback laser diodes, as well as of Fabry – Perot (FP) laser diodes. It is shown that the weakest dependence of the direct modulation efficiency on the locking frequency in the regime of strong external optical injection locking is exhibited by a FP laser diode formed by highly reflective and antireflective coatings on the end faces of a laser structure. A reduction in the dependence of output characteristics of the laser diode on the locking frequency can be attained by decreasing the reflection coefficient of the antireflective FP mirror. (control of laser radiation parameters)

  5. Intensity-Stabilized Fast-Scanned Direct Absorption Spectroscopy Instrumentation Based on a Distributed Feedback Laser with Detection Sensitivity down to 4 × 10−6

    Directory of Open Access Journals (Sweden)

    Gang Zhao

    2016-09-01

    Full Text Available A novel, intensity-stabilized, fast-scanned, direct absorption spectroscopy (IS-FS-DAS instrumentation, based on a distributed feedback (DFB diode laser, is developed. A fiber-coupled polarization rotator and a fiber-coupled polarizer are used to stabilize the intensity of the laser, which significantly reduces its relative intensity noise (RIN. The influence of white noise is reduced by fast scanning over the spectral feature (at 1 kHz, followed by averaging. By combining these two noise-reducing techniques, it is demonstrated that direct absorption spectroscopy (DAS can be swiftly performed down to a limit of detection (LOD (1σ of 4 × 10−6, which opens up a number of new applications.

  6. A Time Difference Method for Measurement of Phase Shift between Distributed Feedback Laser Diode (DFB-LD Output Wavelength and Intensity

    Directory of Open Access Journals (Sweden)

    Yongning Liu

    2015-07-01

    Full Text Available A time difference method to conveniently measure the phase shift between output wavelength and intensity of distributed feedback laser diodes (DFB-LDs was proposed. This approach takes advantage of asymmetric absorption positions at the same wavelength during wavelength increase and decrease tuning processes in the intensity-time curve by current modulation. For its practical implementation, a measurement example of phase shift was demonstrated by measuring a time difference between the first time and the second time attendances of the same gas absorption line in the intensity-time curve during one sine or triangle modulation circle. The phase shifts at modulation frequencies ranging from 50 Hz to 50 kHz were measured with a resolution of 0.001π. As the modulation frequency increased the shift value increased with a slowed growth rate.

  7. Formativ Feedback

    DEFF Research Database (Denmark)

    Hyldahl, Kirsten Kofod

    Denne bog undersøger, hvordan lærere kan anvende feedback til at forbedre undervisningen i klasselokalet. I denne sammenhæng har John Hattie, professor ved Melbourne Universitet, udviklet en model for feedback, hvilken er baseret på synteser af meta-analyser. I 2009 udgav han bogen "Visible...

  8. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  9. 46 CFR 183.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

  10. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

  11. 46 CFR 120.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

  12. Training symmetry of weight distribution after stroke: a randomized controlled pilot study comparing task-related reach, Bobath and feedback training approaches.

    Science.gov (United States)

    Mudie, M H; Winzeler-Mercay, U; Radwan, S; Lee, L

    2002-09-01

    To determine (1) the most effective of three treatment approaches to retrain seated weight distribution long-term after stroke and (2) whether improvements could be generalized to weight distribution in standing. Inpatient rehabilitation unit. Forty asymmetrical acute stroke subjects were randomly allocated to one of four groups in this pilot study. Changes in weight distribution were compared between the 10 subjects of each of three treatment groups (task-specific reach, Bobath, or Balance Performance Monitor [BPM] feedback training) and a no specific treatment control group. One week of measurement only was followed by two weeks of daily training sessions with the treatment to which the subject was randomly allocated. Measurements were performed using the BPM daily before treatment sessions, two weeks after cessation of treatment and 12 weeks post study. Weight distribution was calculated in terms of mean balance (percentage of total body weight) or the mean of 300 balance points over a 30-s data run. In the short term, the Bobath approach was the most effective treatment for retraining sitting symmetry after stroke (p = 0.004). Training with the BPM and no training were also significant (p = 0.038 and p = 0.035 respectively) and task-specific reach training failed to reach significance (p = 0.26). At 12 weeks post study 83% of the BPM training group, 38% of the task-specific reach group, 29% of the Bobath group and 0% of the untrained group were found to be distributing their weight to both sides. Some generalization of symmetry training in sitting to standing was noted in the BPM training group which appeared to persist long term. Results should be treated with caution due to the small group sizes. However, these preliminary findings suggest that it might be possible to restore postural symmetry in sitting in the early stages of rehabilitation with therapy that focuses on creating an awareness of body position.

  13. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  14. Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

    Science.gov (United States)

    Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

    2015-07-22

    Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

  15. Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

    Science.gov (United States)

    Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-05-28

    An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  17. Distributed cooperative H∞ optimal tracking control of MIMO nonlinear multi-agent systems in strict-feedback form via adaptive dynamic programming

    Science.gov (United States)

    Luy, N. T.

    2018-04-01

    The design of distributed cooperative H∞ optimal controllers for multi-agent systems is a major challenge when the agents' models are uncertain multi-input and multi-output nonlinear systems in strict-feedback form in the presence of external disturbances. In this paper, first, the distributed cooperative H∞ optimal tracking problem is transformed into controlling the cooperative tracking error dynamics in affine form. Second, control schemes and online algorithms are proposed via adaptive dynamic programming (ADP) and the theory of zero-sum differential graphical games. The schemes use only one neural network (NN) for each agent instead of three from ADP to reduce computational complexity as well as avoid choosing initial NN weights for stabilising controllers. It is shown that despite not using knowledge of cooperative internal dynamics, the proposed algorithms not only approximate values to Nash equilibrium but also guarantee all signals, such as the NN weight approximation errors and the cooperative tracking errors in the closed-loop system, to be uniformly ultimately bounded. Finally, the effectiveness of the proposed method is shown by simulation results of an application to wheeled mobile multi-robot systems.

  18. Measurement of neutron flux by semiconductor detector; Merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [The Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

    1965-07-01

    Using semiconductor detectors for measuring the neutron flux distribution is considered suitable and faster than using activation foils. Results of radial neutron flux distribution obtained by semiconductor detectors are presented.

  19. Feedback Networks

    OpenAIRE

    Zamir, Amir R.; Wu, Te-Lin; Sun, Lin; Shen, William; Malik, Jitendra; Savarese, Silvio

    2016-01-01

    Currently, the most successful learning models in computer vision are based on learning successive representations followed by a decision layer. This is usually actualized through feedforward multilayer neural networks, e.g. ConvNets, where each layer forms one of such successive representations. However, an alternative that can achieve the same goal is a feedback based approach in which the representation is formed in an iterative manner based on a feedback received from previous iteration's...

  20. Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

    Science.gov (United States)

    Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

    2011-04-25

    Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

  1. Reactivity feedback evaluation of material relocations in the CABRI-1 experiments with fuel worth distributions from SNR-300

    International Nuclear Information System (INIS)

    Royl, P.; Pfrang, W.; Struwe, D.

    1991-01-01

    The fuel relocations from the CABRI-1 experiments with irradiated fuel that had been evaluated from the hodoscope measurements were used together with fuel reactivity worth distributions from the SNR-300 to estimate the reactivity effect which these motions would have if they occurred in SNR-300 at the same relative distance to the peak power as in CABRI. The procedure for the reactivity evaluation is outlined including the assumptions made for fuel mass conservation. The results show that the initial fuel motion yields always negative reactivities. They also document the mechanism for a temporary reactivity increase by in-pin fuel flow in some transient overpower tests. This mechanism, however, never dominates, because material accumulates always sufficiently above the peak power point. Thus, the late autocatalytic amplifications of voiding induced power excursions by compactive in-pin fuel flow, that had been simulated in bounding loss of flow analyses for SNR-300, have no basis at all when considering the results from the CABRI-1 experiments

  2. Mesoscale Modeling of Smoke Particles Distribution and Their Radiative Feedback over Northern Sub-Saharan African Region

    Science.gov (United States)

    Yue, Y.; Wang, J.; Ichoku, C. M.; Ellison, L.

    2015-12-01

    Stretching from southern boundary of Sahara to the equator and expanding west to east from Atlantic Ocean coasts to the India Ocean coasts, the northern sub-Saharan African (NSSA) region has been subject to intense biomass burning. Comprised of savanna, shrub, tropical forest and a number of agricultural crops, the extensive fires burn belt covers central and south of NSSA during dry season (from October to March) contributes to one of the highest biomass burning rate per km2 in the world. Due to smoke particles' absorption effects of solar radiation, they can modify the surface and atmosphere temperature and thus change atmospheric stability, height of the boundary layer, regional atmospheric circulation, evaporation rate, cloud formation, and precipitation. Hence, smoke particles emitted from biomass burning over NSSA region has a significant influence to the air quality, weather and climate variability. In this study, the first version of this Fire Energetics and Emissions Research (FEER.v1) emissions of several smoke constituents including light-absorbing organic carbon (OC) and black carbon (BC) are applied to a state-of-science meteorology-chemistry model as NOAA Weather Research and Forecasting Model with Chemistry (WRF-Chem). We analyzed WRF-Chem simulations of surface and vertical distribution of various pollutants and their direct radiative effects in conjunction with satellite observation data from Moderate Resolution Imaging Spectroradiometer (MODIS) and Cloud-Aerosol Lidar data with Orthogonal Polarization (CALIPSO) to strengthen the importance of combining space measured emission products like FEER.v1 emission inventory with mesoscale model over intense biomass burning region, especially in area where ground-based air-quality and radiation-related observations are limited or absent.

  3. Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm.

    Science.gov (United States)

    Feng, Tao; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Stein, Aaron; Lu, Ming; Belenky, Gregory

    2017-11-01

    The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ∼5-μm-wide ridge with ∼5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1  cm -1 . The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFB lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. The devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.

  4. Narrow-stripe broad-area lasers with distributed-feedback surface gratings as brilliant sources for high power spectral beam combining systems

    Science.gov (United States)

    Decker, J.; Crump, P.; Fricke, J.; Wenzel, H.; Maaβdorf, A.; Erbert, G.; Tränkle, G.

    2014-03-01

    Laser systems based on spectral beam combining (SBC) of broad-area (BA) diode lasers are promising tools for material processing applications. However, the system brightness is limited by the in-plane beam param- eter product, BPP, of the BA lasers, which operate with a BPP of BPP and vertical far eld angle (95% power content), μV 95. The resulting diode lasers are fabricated as mini- bars for reduced assembly costs. Gratings are integrated into the mini-bar, with each laser stripe emitting at a different wavelength. In this way, each emitter can be directed into a single bre via low-cost dielectric filters. Distributed-feedback narrow-stripe broad-area (DFB-NBA) lasers are promising candidates for these SBC sys- tems. We review here the design process and performance achieved, showing that DFB-NBA lasers with stripe width, W = 30 μm, successfully cut of higher-order lateral modes, improving BPP. Uniform, surface-etched, 80th-order Bragg gratings are used, with weak gratings essential for high e ciency. To date, such DFB-NBA sources operate with BPP BPP is half that of a DFB-BA lasers with W = 90 um. We conclude with a review of options for further performance improvements.

  5. Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

    Science.gov (United States)

    Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

    2013-02-11

    We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

  6. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  7. COEVOLUTION BETWEEN SUPERMASSIVE BLACK HOLES AND BULGES IS NOT VIA INTERNAL FEEDBACK REGULATION BUT BY RATIONED GAS SUPPLY DUE TO ANGULAR MOMENTUM DISTRIBUTION

    Energy Technology Data Exchange (ETDEWEB)

    Cen, Renyue, E-mail: cen@astro.princeton.edu [Princeton University Observatory, Princeton, NJ 08544 (United States)

    2015-05-20

    We reason that without physical fine-tuning, neither the supermassive black holes (SMBHs) nor the stellar bulges can self-regulate or inter-regulate by driving away already fallen cold gas to produce the observed correlation between them. We suggest an alternative scenario where the observed mass ratios of the SMBHs to bulges reflect the angular momentum distribution of infallen gas such that the mass reaching the stable accretion disk is a small fraction of that reaching the bulge region, averaged over the cosmological timescales. We test this scenario using high-resolution, large-scale cosmological hydrodynamic simulations, without active galactic nucleus (AGN) feedback, assuming the angular momentum distribution of gas landing in the bulge region yields a Mestel disk that is supported by independent simulations resolving the Bondi radii of SMBHs. A mass ratio of 0.1%–0.3% between the very low angular momentum gas that free falls to the subparsec region to accrete to the SMBH and the overall star formation rate is found. This ratio is found to increase with increasing redshift to within a factor of ∼2, suggesting that the SMBH-to-bulge ratio is nearly redshift independent, with a modest increase with redshift, which is a testable prediction. Furthermore, the duty cycle of AGNs with high Eddington ratios is expected to increase significantly with redshift. Finally, while SMBHs and bulges are found to coevolve on ∼30–150 Myr timescales or longer, there is indication that on still smaller timescales, the SMBH accretion and star formation may be less correlated.

  8. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  9. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  10. Multi-electrode laterally coupled distributed feedback InGaAsP/InP lasers: a prescription for longitudinal mode control

    Science.gov (United States)

    Benhsaien, Abdessamad; Dridi, Kais; Zhang, Jessica; Hall, Trevor J.

    2013-10-01

    Photonic Integrated Circuits (PICs) enable photons as data carriers at a very high speed. PIC market opportunities call for reduced wafer dimensions, power consumption and cost as well as enhanced reliability. The PIC technology development must cater for the latter relentless traits. In particular, monolithic PICs are sought as they can integrate hundreds of components and functions onto a single chip. InGaAsP/InP laterally-coupled distributed feedback (LC-DFB) lasers stand as key enablers in the PIC technology thanks to the compelling advantages their embedded high-order surface-gratings have. The patterning of the spatial corrugation along the sidewalls of the LC-DFB ridge, has been established to make the epitaxial overgrowth unnecessary thereby reducing the cost and time of manufacturing, and ultimately increasing the yield. LC-DFBs boast a small footprint synonymous of enhanced monolithic integrate-ability. Nonetheless, LC-DFBs suffer from the adverse longitudinal spatial hole burning (LSHB) effects materialized by typically quite high threshold current levels. Indeed, the carrier density longitudinal gradient- responsible for modes contending for the available material gain in the cavity- may be alleviated somewhat by segmenting the LC-DFB electrode into two or three reasonably interspaced longitudinal sections. In this work we report on the realization and performance of various electrode partition configurations. At room temperature, the experimental characterization of many as-cleaved LC-DFB devices provides ample evidence of superior performance such as a narrow linewidth (less than 400 kHz), a wide wavelength tune-ability (over 4 nm) and a hop-free single mode emission (side mode suppression ratio (SMSR) exceeding 54dB).

  11. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  12. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  13. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  14. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  15. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  16. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  17. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  18. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  19. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  20. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  1. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  2. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  3. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  4. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  5. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  6. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey

    2017-01-01

    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  7. Charge regulation at semiconductor-electrolyte interfaces.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2015-07-01

    The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

  8. All-Optical flip-flop operation using a SOA and DFB laser diode optical feedback combination

    DEFF Research Database (Denmark)

    D'Oosterlinck, W.; Öhman, Filip; Buron, Jakob Due

    2007-01-01

    We report on the switching of an all-optical flip-flop consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB), bidirectionally coupled to each other. Both simulation and experimental results are presented. Switching times as low as 50ps, minimal required...... switch pulse energies below lpJ and a repetition rate of 1.25GHz have been measured. Contrast ratios over 25dB have been obtained. The dependence on the pulse length and CW input power of the minimal required switch energy is investigated....

  9. High-Speed Chaos in an Optical Feedback System with Flexible Timescales

    National Research Council Canada - National Science Library

    Blakely, Jonathan

    2003-01-01

    We describe a new optoelectronic device with timedelayed feedback that uses a Mach-Zehnder interferometer as passive nonlinearity and a semiconductor laser as a current-to-optical frequency converter...

  10. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  11. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  12. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  13. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  14. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  15. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  16. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  17. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  18. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  19. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  20. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  1. Feedback and Incentives

    DEFF Research Database (Denmark)

    Eriksson, Tor Viking; Poulsen, Anders; Villeval, Marie Claire

    2009-01-01

    This paper experimentally investigates the impact of different pay schemes and relative performance feedback policies on employee effort. We explore three feedback rules: no feedback on relative performance, feedback given halfway through the production period, and continuously updated feedback. ...... behind, and front runners do not slack off. But in both pay schemes relative performance feedback reduces the quality of the low performers' work; we refer to this as a "negative quality peer effect"....

  2. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  3. Quantitative autoradiography of semiconductor base material

    International Nuclear Information System (INIS)

    Treutler, H.C.; Freyer, K.

    1983-01-01

    Autoradiographic methods for the quantitative determination of elements interesting in semiconductor technology and their distribution in silicon are described. Whereas the local concentration and distribution of phosphorus has been determined with the aid of silver halide films the neutron-induced autoradiography has been applied in the case of boron. Silicon disks containing diffused phosphorus or implanted or diffused boron have been used as standard samples. Different possibilities of the quantitative evaluation of autoradiograms are considered and compared

  4. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Skriftlig feedback i engelskundervisningen

    DEFF Research Database (Denmark)

    Kjærgaard, Hanne Wacher

    2017-01-01

    The article describes useful feedback strategies in language teaching and describes the feedback practices of lower-seconday teachers in Denmark. The article is aimed at language teahcers in secondary schools.......The article describes useful feedback strategies in language teaching and describes the feedback practices of lower-seconday teachers in Denmark. The article is aimed at language teahcers in secondary schools....

  6. Student Engagement with Feedback

    Science.gov (United States)

    Scott, Jon; Shields, Cathy; Gardner, James; Hancock, Alysoun; Nutt, Alex

    2011-01-01

    This report considers Biological Sciences students' perceptions of feedback, compared with those of the University as a whole, this includes what forms of feedback were considered most useful and how feedback used. Compared with data from previous studies, Biological Sciences students gave much greater recognition to oral feedback, placing it on a…

  7. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  8. Calculation of the displacement cross sections and the DPA distribution in hydrogenated amorphous silicon semiconductors detectors in medical digital imaging applications

    International Nuclear Information System (INIS)

    Leyva Fabelo, Antonio; Piñera Hernández, Ibrahin; Shtejer Díaz, Katerin; Abreu Alfonso, Yamiel; Cruz Inclán, Carlos Manuel

    2007-01-01

    In present paper the dependence of the displacement cross sections of the different species of atoms in the a-Si:H structure, with the energy of the secondary electrons generated by the X-rays of the typical energies using in medical imaging applications, was calculated using the Mott-McKinley- Feshbach approach. It was verified that for electron energies higher than 1.52 keV it is possible the occurrence of hydrogen atoms displacements, while for the silicon atoms the threshold energy is 126 keV. These results were compared with those obtained for similar detectors but developed with crystalline silicon. With the use of the mathematical simulation of the radiation transport in the matter, the energy spectrum of the secondary electrons was calculated in order to estimate the number of atomic displacements, which take place in the semiconducting amorphous device in working regime. The spatial distribution of the dpa in the detectors volume, as well as its behavior with the depth in the work region are presented and discussed in the text. (author)

  9. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

    Science.gov (United States)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

    2013-11-18

    Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

  10. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  11. Impact of slow-light enhancement on optical propagation in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

    2015-01-01

    We derive and validate a set of coupled Bloch wave equations for analyzing the reflection and transmission properties of active semiconductor photonic crystal waveguides. In such devices, slow-light propagation can be used to enhance the material gain per unit length, enabling, for example......, the realization of short optical amplifiers compatible with photonic integration. The coupled wave analysis is compared to numerical approaches based on the Fourier modal method and a frequency domain finite element technique. The presence of material gain leads to the build-up of a backscattered field, which...... is interpreted as distributed feedback effects or reflection at passive-active interfaces, depending on the approach taken. For very large material gain values, the band structure of the waveguide is perturbed, and deviations from the simple coupled Bloch wave model are found....

  12. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  13. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  14. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  15. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  16. Longitudinal feedback system for PEP

    International Nuclear Information System (INIS)

    Allen, M.A.; Cornacchia, M.; Millich, A.

    1979-02-01

    Whether the wide bandwidth longitudinal feedback system described in this paper is made to act on the individual modes in frequency domain or on the individual bunches in time domain, it represents a clean and efficient way of damping the longitudinal oscillations without influencing other beam parameters such as bunch shape or synchrotron frequency distribution. The frequency domain feedback presents the advantage of providing information on which modes are unstable and on their risetimes, which may be helpful in locating dangerous resonators in the ring

  17. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  18. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  19. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  20. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  1. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  2. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  3. Driver feedback mobile APP

    Energy Technology Data Exchange (ETDEWEB)

    Soriguera Marti, F.; Miralles Miquel, E.

    2016-07-01

    This paper faces the human factor in driving and its consequences for road safety. It presents the concepts behind the development of a smartphone app capable of evaluating drivers’ performance. The app provides feedback to the driver in terms of a grade (between 0 and 10) depending on the aggressiveness and risks taken while driving. These are computed from the cumulative probability distribution function of the jerks (i.e. the time derivative of acceleration), which are measured using the smartphones’ accelerometer. Different driving contexts (e.g. urban, freeway, congestion, etc.) are identified applying cluster analysis to the measurements, and treated independently. Using regression analysis, the aggressiveness indicator is related to the drivers' safety records and to the probability of having an accident, through the standard DBQ - Driving Behavior Questionnaire. Results from a very limited pilot test show a strong correlation between the 99th percentile of the jerk measurements and the DBQ results. A linear model is fitted. This allows quantifying the safe driving behavior only from smartphone measurements. Finally, this indicator is translated into a normalized grade and feedback to the driver. This feedback will challenge the driver to train and to improve his performance. The phone will be blocked while driving and will incorporate mechanisms to prevent bad practices, like competition in aggressive driving. The app is intended to contribute to the improvement of road safety, one of the major public health problems, by tackling the human factor which is the trigger of the vast majority of traffic accidents. Making explicit and quantifying risky behaviors is the first step towards a safer driving. (Author)

  4. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  5. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  6. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  7. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  8. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  9. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  10. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  11. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  12. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  13. Fault Tolerant Feedback Control

    DEFF Research Database (Denmark)

    Stoustrup, Jakob; Niemann, H.

    2001-01-01

    An architecture for fault tolerant feedback controllers based on the Youla parameterization is suggested. It is shown that the Youla parameterization will give a residual vector directly in connection with the fault diagnosis part of the fault tolerant feedback controller. It turns out...... that there is a separation be-tween the feedback controller and the fault tolerant part. The closed loop feedback properties are handled by the nominal feedback controller and the fault tolerant part is handled by the design of the Youla parameter. The design of the fault tolerant part will not affect the design...... of the nominal feedback con-troller....

  14. Feedback on Feedback--Does It Work?

    Science.gov (United States)

    Speicher, Oranna; Stollhans, Sascha

    2015-01-01

    It is well documented that providing assessment feedback through the medium of screencasts is favourably received by students and encourages deeper engagement with the feedback given by the language teacher (inter alia Abdous & Yoshimura, 2010; Brick & Holmes, 2008; Cann, 2007; Stannard, 2007). In this short paper we will report the…

  15. Novel Reduced-Feedback Wireless Communication Systems

    KAUST Repository

    Shaqfeh, Mohammad Obaidah; Alnuweiri, Hussein; Alouini, Mohamed-Slim

    2011-01-01

    We have recently contributed to this field and published several journal and conference papers. We are the pioneers to propose a novel reduced-feedback opportunistic scheduling scheme that combines many desired features including fairness in resources distribution across the active terminals and distributed processing at the MAC layer level. In addition our scheme operates close to the upper capacity limits of achievable transmission rates over wireless links. We have also proposed another hybrid scheme that enables adjusting the feedback load flexibly based on rates requirements. We are currently investigating other novel ideas to design reduced-feedback communication systems.

  16. Microscopic modeling of photoluminescence of strongly disordered semiconductors

    International Nuclear Information System (INIS)

    Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, S.W.

    2007-01-01

    A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution

  17. On load resistor noise in preamplifiers for semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

    1975-01-01

    The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

  18. Semiconductor analysis with a channeled helium microbeam

    International Nuclear Information System (INIS)

    Ingarfield, S.A.; McKenzie, C.D.; Short, K.T.; Williams, J.S.

    1981-01-01

    This paper describes the use of a channeled helium microbeam for analysis of damage and dopant distributions in semiconductors. Practical difficulties and potential problems associated with the channeling of microbeams in semiconductors have been examined. In particular, the following factors have been characterised: i) the effect of both convergence of focused beam and beam scanning on the quality of channeling; ii) damage produced by the probe ions; and iii) local beam heating effects arising from high current densities. Acceptable channeling has been obtained (minimum yield approaching 4%) under a variety of focusing and scanning conditions which are suitable for analysis of device structures. The capabilities of the technique are demonstrated by monitoring variations in local damage and impurity depth distributions across a narrow (<2mm) region of an ion implanted silicon wafer

  19. Theory of quantum diffusion in biased semiconductors

    CERN Document Server

    Bryksin, V V

    2003-01-01

    A general theory is developed to describe diffusion phenomena in biased semiconductors and semiconductor superlattices. It is shown that the Einstein relation is not applicable for all field strengths so that the calculation of the field-mediated diffusion coefficient represents a separate task. Two quite different diffusion contributions are identified. The first one disappears when the dipole operator commutes with the Hamiltonian. It plays an essential role in the theory of small polarons. The second contribution is obtained from a quantity that is the solution of a kinetic equation but that cannot be identified with the carrier distribution function. This is in contrast to the drift velocity, which is closely related to the distribution function. A general expression is derived for the quantum diffusion regime, which allows a clear physical interpretation within the hopping picture.

  20. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  1. Distribution

    Science.gov (United States)

    John R. Jones

    1985-01-01

    Quaking aspen is the most widely distributed native North American tree species (Little 1971, Sargent 1890). It grows in a great diversity of regions, environments, and communities (Harshberger 1911). Only one deciduous tree species in the world, the closely related Eurasian aspen (Populus tremula), has a wider range (Weigle and Frothingham 1911)....

  2. Continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor

    Science.gov (United States)

    Jia, Yufei; Kerner, Ross A.; Grede, Alex J.; Rand, Barry P.; Giebink, Noel C.

    2017-12-01

    Hybrid organic-inorganic perovskites have emerged as promising gain media for tunable, solution-processed semiconductor lasers. However, continuous-wave operation has not been achieved so far1-3. Here, we demonstrate that optically pumped continuous-wave lasing can be sustained above threshold excitation intensities of 17 kW cm-2 for over an hour in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of T ≈ 160 K. In contrast with the lasing death phenomenon that occurs for pure tetragonal-phase MAPbI3 at T > 160 K (ref. 4), we find that continuous-wave gain becomes possible at T ≈ 100 K from tetragonal-phase inclusions that are photogenerated by the pump within the normally existing, larger-bandgap orthorhombic host matrix. In this mixed-phase system, the tetragonal inclusions function as carrier recombination sinks that reduce the transparency threshold, in loose analogy to inorganic semiconductor quantum wells, and may serve as a model for engineering improved perovskite gain media.

  3. The Mythology of Feedback

    Science.gov (United States)

    Adcroft, Andy

    2011-01-01

    Much of the general education and discipline-specific literature on feedback suggests that it is a central and important element of student learning. This paper examines feedback from a social process perspective and suggests that feedback is best understood through an analysis of the interactions between academics and students. The paper argues…

  4. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  5. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  6. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  7. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  8. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  9. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  10. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  11. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  12. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  14. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  15. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  16. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  18. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  19. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  20. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  1. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  2. Follower-Centered Perspective on Feedback: Effects of Feedback Seeking on Identification and Feedback Environment

    OpenAIRE

    Gong, Zhenxing; Li, Miaomiao; Qi, Yaoyuan; Zhang, Na

    2017-01-01

    In the formation mechanism of the feedback environment, the existing research pays attention to external feedback sources and regards individuals as objects passively accepting feedback. Thus, the external source fails to realize the individuals’ need for feedback, and the feedback environment cannot provide them with useful information, leading to a feedback vacuum. The aim of this study is to examine the effect of feedback-seeking by different strategies on the supervisor-feedback environme...

  3. Multivariable Feedback Control of Nuclear Reactors

    Directory of Open Access Journals (Sweden)

    Rune Moen

    1982-07-01

    Full Text Available Multivariable feedback control has been adapted for optimal control of the spatial power distribution in nuclear reactor cores. Two design techniques, based on the theory of automatic control, were developed: the State Variable Feedback (SVF is an application of the linear optimal control theory, and the Multivariable Frequency Response (MFR is based on a generalization of the traditional frequency response approach to control system design.

  4. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  5. Positron annihilation spectroscopy in defects of semiconductors

    International Nuclear Information System (INIS)

    Fujinami, Masanori

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

  6. Electrons and Phonons in Semiconductor Multilayers

    Science.gov (United States)

    Ridley, B. K.

    1996-11-01

    This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

  7. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  8. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  9. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  10. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  11. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  12. RF feedback for KEKB

    Energy Technology Data Exchange (ETDEWEB)

    Ezura, Eizi; Yoshimoto, Shin-ichi; Akai, Kazunori [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

    1996-08-01

    This paper describes the present status of the RF feedback development for the KEK B-Factory (KEKB). A preliminary experiment concerning the RF feedback using a parallel comb-filter was performed through a choke-mode cavity and a klystron. The RF feedback has been tested using the beam of the TRISTAN Main Ring, and has proved to be effective in damping the beam instability. (author)

  13. Neural cryptography with feedback.

    Science.gov (United States)

    Ruttor, Andreas; Kinzel, Wolfgang; Shacham, Lanir; Kanter, Ido

    2004-04-01

    Neural cryptography is based on a competition between attractive and repulsive stochastic forces. A feedback mechanism is added to neural cryptography which increases the repulsive forces. Using numerical simulations and an analytic approach, the probability of a successful attack is calculated for different model parameters. Scaling laws are derived which show that feedback improves the security of the system. In addition, a network with feedback generates a pseudorandom bit sequence which can be used to encrypt and decrypt a secret message.

  14. Feedback and Incentives:

    DEFF Research Database (Denmark)

    Eriksson, Tor Viking; Poulsen, Anders; Villeval, Marie-Claire

    This paper experimentally investigates the impact of different pay and relative performance information policies on employee effort. We explore three information policies: No feedback about relative performance, feedback given halfway through the production period, and continuously updated feedba...... of positive peer effects since the underdogs almost never quit the competition even when lagging significantly behind, and frontrunners do not slack off. Moreover, in both pay schemes information feedback reduces the quality of the low performers' work....

  15. Policy Feedback System (PFS)

    Data.gov (United States)

    Social Security Administration — The Policy Feedback System (PFS) is a web application developed by the Office of Disability Policy Management Information (ODPMI) team that gathers empirical data...

  16. Feedback stabilization initiative

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-06-01

    Much progress has been made in attaining high confinement regimes in magnetic confinement devices. These operating modes tend to be transient, however, due to the onset of MHD instabilities, and their stabilization is critical for improved performance at steady state. This report describes the Feedback Stabilization Initiative (FSI), a broad-based, multi-institutional effort to develop and implement methods for raising the achievable plasma betas through active MHD feedback stabilization. A key element in this proposed effort is the Feedback Stabilization Experiment (FSX), a medium-sized, national facility that would be specifically dedicated to demonstrating beta improvement in reactor relevant plasmas by using a variety of MHD feedback stabilization schemes.

  17. Feedback stabilization initiative

    International Nuclear Information System (INIS)

    1997-06-01

    Much progress has been made in attaining high confinement regimes in magnetic confinement devices. These operating modes tend to be transient, however, due to the onset of MHD instabilities, and their stabilization is critical for improved performance at steady state. This report describes the Feedback Stabilization Initiative (FSI), a broad-based, multi-institutional effort to develop and implement methods for raising the achievable plasma betas through active MHD feedback stabilization. A key element in this proposed effort is the Feedback Stabilization Experiment (FSX), a medium-sized, national facility that would be specifically dedicated to demonstrating beta improvement in reactor relevant plasmas by using a variety of MHD feedback stabilization schemes

  18. Feedback Loop Gains and Feedback Behavior (1996)

    DEFF Research Database (Denmark)

    Kampmann, Christian Erik

    2012-01-01

    Linking feedback loops and system behavior is part of the foundation of system dynamics, yet the lack of formal tools has so far prevented a systematic application of the concept, except for very simple systems. Having such tools at their disposal would be a great help to analysts in understanding...... large, complicated simulation models. The paper applies tools from graph theory formally linking individual feedback loop strengths to the system eigenvalues. The significance of a link or a loop gain and an eigenvalue can be expressed in the eigenvalue elasticity, i.e., the relative change...... of an eigenvalue resulting from a relative change in the gain. The elasticities of individual links and loops may be found through simple matrix operations on the linearized system. Even though the number of feedback loops can grow rapidly with system size, reaching astronomical proportions even for modest systems...

  19. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  20. Optimized chaotic Brillouin dynamic grating with filtered optical feedback.

    Science.gov (United States)

    Zhang, Jianzhong; Li, Zhuping; Wu, Yuan; Zhang, Mingjiang; Liu, Yi; Li, Mengwen

    2018-01-16

    Chaotic Brillouin dynamic gratings (BDGs) have special advantages such as the creation of single, permanent and localized BDG. However, the periodic signals induced by conventional optical feedback (COF) in chaotic semiconductor lasers can lead to the generation of spurious BDGs, which will limit the application of chaotic BDGs. In this paper, filtered optical feedback (FOF) is proposed to eliminate spurious BDGs. By controlling the spectral width of the optical filter and its detuning from the laser frequency, semiconductor lasers with FOF operate in the suppression region of the time-delay signature, and chaotic outputs serving as pump waves are then utilized to generate the chaotic BDG in a polarization maintaining fiber. Through comparative analysis of the COF and FOF schemes, it has been demonstrated that spurious BDGs are effectively eliminated and that the reflection characterization of the chaotic BDG is improved. The influence of FOF on the reflection and gain spectra of the chaotic BDG is analyzed as well.

  1. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  2. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  3. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  4. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  5. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  6. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  7. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  8. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  9. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  10. Sea ice-albedo climate feedback mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Schramm, J.L.; Curry, J.A. [Univ. of Colorado, Boulder, CO (United States); Ebert, E.E. [Bureau of Meterology Research Center, Melbourne (Australia)

    1995-02-01

    The sea ice-albedo feedback mechanism over the Arctic Ocean multiyear sea ice is investigated by conducting a series of experiments using several one-dimensional models of the coupled sea ice-atmosphere system. In its simplest form, ice-albedo feedback is thought to be associated with a decrease in the areal cover of snow and ice and a corresponding increase in the surface temperature, further decreasing the area cover of snow and ice. It is shown that the sea ice-albedo feedback can operate even in multiyear pack ice, without the disappearance of this ice, associated with internal processes occurring within the multiyear ice pack (e.g., duration of the snow cover, ice thickness, ice distribution, lead fraction, and melt pond characteristics). The strength of the ice-albedo feedback mechanism is compared for several different thermodynamic sea ice models: a new model that includes ice thickness distribution., the Ebert and Curry model, the Mayjut and Untersteiner model, and the Semtner level-3 and level-0 models. The climate forcing is chosen to be a perturbation of the surface heat flux, and cloud and water vapor feedbacks are inoperative so that the effects of the sea ice-albedo feedback mechanism can be isolated. The inclusion of melt ponds significantly strengthens the ice-albedo feedback, while the ice thickness distribution decreases the strength of the modeled sea ice-albedo feedback. It is emphasized that accurately modeling present-day sea ice thickness is not adequate for a sea ice parameterization; the correct physical processes must be included so that the sea ice parameterization yields correct sensitivities to external forcing. 22 refs., 6 figs., 1 tab.

  11. Effects of feedback reliability on feedback-related brain activity: A feedback valuation account.

    Science.gov (United States)

    Ernst, Benjamin; Steinhauser, Marco

    2018-04-06

    Adaptive decision making relies on learning from feedback. Because feedback sometimes can be misleading, optimal learning requires that knowledge about the feedback's reliability be utilized to adjust feedback processing. Although previous research has shown that feedback reliability indeed influences feedback processing, the underlying mechanisms through which this is accomplished remain unclear. Here we propose that feedback processing is adjusted by the adaptive, top-down valuation of feedback. We assume that unreliable feedback is devalued relative to reliable feedback, thus reducing the reward prediction errors that underlie feedback-related brain activity and learning. A crucial prediction of this account is that the effects of feedback reliability are susceptible to contrast effects. That is, the effects of feedback reliability should be enhanced when both reliable and unreliable feedback are experienced within the same context, as compared to when only one level of feedback reliability is experienced. To evaluate this prediction, we measured the event-related potentials elicited by feedback in two experiments in which feedback reliability was varied either within or between blocks. We found that the fronto-central valence effect, a correlate of reward prediction errors during reinforcement learning, was reduced for unreliable feedback. But this result was obtained only when feedback reliability was varied within blocks, thus indicating a contrast effect. This suggests that the adaptive valuation of feedback is one mechanism underlying the effects of feedback reliability on feedback processing.

  12. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  13. FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

  14. Feedback For Helpers

    Science.gov (United States)

    Stromer, Walter F.

    1975-01-01

    The author offers some feedback to those in the helping professions in three areas: (1) forms and letters; (2) jumping to conclusions; and (3) blaming and belittling, in hopes of stimulating more feedback as well as more positive ways of performing their services. (HMV)

  15. 'Peer feedback' voor huisartsopleiders

    NARCIS (Netherlands)

    Damoiseaux, R A M J; Truijens, L

    2016-01-01

    In medical specialist training programmes it is common practice for residents to provide feedback to their medical trainers. The problem is that due to its anonymous nature, the feedback often lacks the specificity necessary to improve the performance of trainers. If anonymity is to be abolished,

  16. Feedback og interpersonel kommunikation

    DEFF Research Database (Denmark)

    Dindler, Camilla

    2016-01-01

    Som interpersonel kommunikationsform handler feedback om at observere, mærke og italesætte det, som handler om relationen mellem samtaleparterne mere end om samtaleemnet. Her er fokus på, hvad der siges og hvordan der kommunikeres sammen. Feedback er her ikke en korrigerende tilbagemelding til...

  17. Modeling and experimental verification of laser self-mixing interference phenomenon with the structure of two-external-cavity feedback

    Science.gov (United States)

    Chen, Peng; Liu, Yuwei; Gao, Bingkun; Jiang, Chunlei

    2018-03-01

    A semiconductor laser employed with two-external-cavity feedback structure for laser self-mixing interference (SMI) phenomenon is investigated and analyzed. The SMI model with two directions based on F-P cavity is deduced, and numerical simulation and experimental verification were conducted. Experimental results show that the SMI with the structure of two-external-cavity feedback under weak light feedback is similar to the sum of two SMIs.

  18. Velocity Feedback Experiments

    Directory of Open Access Journals (Sweden)

    Chiu Choi

    2017-02-01

    Full Text Available Transient response such as ringing in a control system can be reduced or removed by velocity feedback. It is a useful control technique that should be covered in the relevant engineering laboratory courses. We developed velocity feedback experiments using two different low cost technologies, viz., operational amplifiers and microcontrollers. These experiments can be easily integrated into laboratory courses on feedback control systems or microcontroller applications. The intent of developing these experiments was to illustrate the ringing problem and to offer effective, low cost solutions for removing such problem. In this paper the pedagogical approach for these velocity feedback experiments was described. The advantages and disadvantages of the two different implementation of velocity feedback were discussed also.

  19. Feedback i matematik

    DEFF Research Database (Denmark)

    Sortkær, Bent

    2017-01-01

    Feedback bliver i litteraturen igen og igen fremhævet som et af de mest effektive midler til at fremme elevers præstationer i skolen (Hartberg, Dobson, & Gran, 2012; Hattie & Timperley, 2007; Wiliam, 2015). Dette på trods af, at flere forskere påpeger, at feedback ikke altid er læringsfremmende...... (Hattie & Gan, 2011), og nogle endda viser, at feedback kan have en negativ virkning i forhold til præstationer (Kluger & DeNisi, 1996). Artiklen vil undersøge disse tilsyneladende modstridende resultater ved at stille spørgsmålet: Under hvilke forudsætninger virker feedback i matematik læringsfremmende......? Dette gøres ved at dykke ned i forskningslitteraturen omhandlende feedback ud fra en række temaer for på den måde at besvare ovenstående spørgsmål....

  20. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  1. Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor

    DEFF Research Database (Denmark)

    Kovács, András; Schaffer, B.; Moreno, M. S.

    2011-01-01

    Fe-doped GaN semiconductors are of interest for combining the properties of semiconductors and magnetic materials [1]. Depending on the growth temperature used, Fe can either be distributed homogenously in the GaN host lattice or it can accumulate in the form of Fe-N nanocrystals. As a result of ...

  2. Imaging the motion of electrons across semiconductor heterojunctions

    Science.gov (United States)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  3. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  4. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  5. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  6. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  7. Distributed feedback guided surface acoustic wave microresonator

    Science.gov (United States)

    Golan, G.; Griffel, G.; Seidman, A.; Croitoru, N.

    1989-08-01

    Surface acoustic wave resonators have been used in a number of applications: high-Q frequency filtering, very accurate frequency sources, etc. A major disadvantage of conventional resonators is their large dimensions, which makes them inadequate for integrated acoustics applications. In order to overcome these size limitations a new type of microresonator was designed, developed, and tested. In this paper, theoretical calculations and measurements on two kinds of such devices (a corrugated waveguide filter and a microresonator structure) are presented and their possible applications are discussed.

  8. Activity coefficients of electrons and holes in semiconductors

    International Nuclear Information System (INIS)

    Orazem, M.E.; Newman, J.

    1984-01-01

    Dilute-solution transport equations with constant activity coefficients are commonly used to model semiconductors. These equations are consistent with a Boltzmann distribution and are invalid in regions where the species concentration is close to the respective site concentration. A more rigorous treatment of transport in a semiconductor requires activity coefficients which are functions of concentration. Expressions are presented for activity coefficients of electrons and holes in semiconductors for which conduction- and valence-band energy levels are given by the respective bandedge energy levels. These activity coefficients are functions of concentration and are thermodynamically consistent. The use of activity coefficients in macroscopic transport relationships allows a description of electron transport in a manner consistent with the Fermi-Dirac distribution

  9. Feedback and efficient behavior.

    Directory of Open Access Journals (Sweden)

    Sandro Casal

    Full Text Available Feedback is an effective tool for promoting efficient behavior: it enhances individuals' awareness of choice consequences in complex settings. Our study aims to isolate the mechanisms underlying the effects of feedback on achieving efficient behavior in a controlled environment. We design a laboratory experiment in which individuals are not aware of the consequences of different alternatives and, thus, cannot easily identify the efficient ones. We introduce feedback as a mechanism to enhance the awareness of consequences and to stimulate exploration and search for efficient alternatives. We assess the efficacy of three different types of intervention: provision of social information, manipulation of the frequency, and framing of feedback. We find that feedback is most effective when it is framed in terms of losses, that it reduces efficiency when it includes information about inefficient peers' behavior, and that a lower frequency of feedback does not disrupt efficiency. By quantifying the effect of different types of feedback, our study suggests useful insights for policymakers.

  10. Feedback - fra et elevperspektiv

    DEFF Research Database (Denmark)

    Petersen, Benedikte Vilslev; Pedersen, Bent Sortkær

    Feedback bliver i litteraturen igen og igen fremhævet som et af de mest effektive midler til at fremme elevers præstationer i skolen (Hattie og Timperley, 2007). Andre studier er dog inde på at feedback ikke altid er læringsfremmende og nogle viser endda at feedback kan have en negativ virkning i...... forhold til præstationer (Kluger & DeNisi, 1996). I forsøget på at forklare hvordan og hvorfor feedback virker (forskelligt), er der undersøgt flere dimensioner og forhold omkring feedback (se bl.a. Black og Wiliam, 1998; Hattie og Timperley, 2007; Shute, 2008). Dog er der få studier der undersøger...... hvordan feedback opleves fra et elevperspektiv (Ruiz-Primo og Li, 2013). Samtidig er der i feedbacklitteraturen en mangel på kvalitative studier, der kommer tæt på fænomenet feedback, som det viser sig i klasserummet (Ruiz-Primo og Li, 2013) i naturlige omgivelser (Black og Wiliam, 1998), og hvordan...

  11. Training effectiveness feedback

    International Nuclear Information System (INIS)

    Wiggin, N.A.

    1987-01-01

    A formal method of getting feedback about the job performance of employees is a necessary part of all the authors training programs. The formal process may prove to be inadequate if it is the only process in use. There are many ways and many opportunities to get good feedback about employee performance. It is important to document these methods and specific instances to supplement the more formalized process. The key is to identify them, encourage them, use them, and document the training actions that result from them. This paper describes one plant's method of getting feedback about performance of technicians in the field

  12. Feedback System Theory

    Science.gov (United States)

    1978-11-01

    R 2. GOVT A $ SION NO. 3 RIEqLPýIVT’S.;TALOG NUMBER r/ 4. TITLE (and wbiFflT, -L M4 1 , FEEDBACK SYSTEM THEORY ~r Inter in- 6. PERFORMING ORG. REPORT...ANNUAL REPORT FEEDBACK SYSTEM THEORY AFOSR GRANT NO. 76-2946B Air Force Office of Scientific Research for year ending October 31, 1978 79 02 08 L|I...re less stringent than in other synthesis techniques which cannot handle significant parameter uncertainty. _I FEEDBACK SYSTEM THEORY 1. Introduction

  13. Brugbar peer feedback

    DEFF Research Database (Denmark)

    Hvass, Helle; Heger, Stine

    Studerende kan være medskabere af undervisning i akademisk skrivning, når de modtager og giver feedback til hinandens ufærdige akademiske tekster. Det ser vi i et udviklingsprojekt, hvor vi afprøver kollektive vejledningsformater. Vi har dog erfaret: 1. at studerende mangler træning i at give og ...... modtage feedback 2. at den manglende træning kan stå i vejen for realiseringen af læringspotentialet ved peer feedback....

  14. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  15. Asymmetric noise sensitivity of pulse trains in an excitable microlaser with delayed optical feedback

    Science.gov (United States)

    Terrien, Soizic; Krauskopf, Bernd; Broderick, Neil G. R.; Andréoli, Louis; Selmi, Foued; Braive, Rémy; Beaudoin, Grégoire; Sagnes, Isabelle; Barbay, Sylvain

    2017-10-01

    A semiconductor micropillar laser with delayed optical feedback is considered. In the excitable regime, we show that a single optical perturbation can trigger a train of pulses that is sustained for a finite duration. The distribution of the pulse train duration exhibits an exponential behavior characteristic of a noise-induced process driven by uncorrelated white noise present in the system. The comparison of experimental observations with theoretical and numerical analysis of a minimal model yields excellent agreement. Importantly, the random switch-off process takes place between two attractors of different nature: an equilibrium and a periodic orbit. Our analysis shows that there is a small time window during which the pulsations are very sensitive to noise, and this explains the observed strong bias toward switch-off. These results raise the possibility of all optical control of the pulse train duration that may have an impact for practical applications in photonics and may also apply to the dynamics of other noise-driven excitable systems with delayed feedback.

  16. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  17. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  18. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  19. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  20. Feedback Valence Affects Auditory Perceptual Learning Independently of Feedback Probability

    Science.gov (United States)

    Amitay, Sygal; Moore, David R.; Molloy, Katharine; Halliday, Lorna F.

    2015-01-01

    Previous studies have suggested that negative feedback is more effective in driving learning than positive feedback. We investigated the effect on learning of providing varying amounts of negative and positive feedback while listeners attempted to discriminate between three identical tones; an impossible task that nevertheless produces robust learning. Four feedback conditions were compared during training: 90% positive feedback or 10% negative feedback informed the participants that they were doing equally well, while 10% positive or 90% negative feedback informed them they were doing equally badly. In all conditions the feedback was random in relation to the listeners’ responses (because the task was to discriminate three identical tones), yet both the valence (negative vs. positive) and the probability of feedback (10% vs. 90%) affected learning. Feedback that informed listeners they were doing badly resulted in better post-training performance than feedback that informed them they were doing well, independent of valence. In addition, positive feedback during training resulted in better post-training performance than negative feedback, but only positive feedback indicating listeners were doing badly on the task resulted in learning. As we have previously speculated, feedback that better reflected the difficulty of the task was more effective in driving learning than feedback that suggested performance was better than it should have been given perceived task difficulty. But contrary to expectations, positive feedback was more effective than negative feedback in driving learning. Feedback thus had two separable effects on learning: feedback valence affected motivation on a subjectively difficult task, and learning occurred only when feedback probability reflected the subjective difficulty. To optimize learning, training programs need to take into consideration both feedback valence and probability. PMID:25946173

  1. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  2. Ambulatory Feedback System

    Science.gov (United States)

    Finger, Herbert; Weeks, Bill

    1985-01-01

    This presentation discusses instrumentation that will be used for a specific event, which we hope will carry on to future events within the Space Shuttle program. The experiment is the Autogenic Feedback Training Experiment (AFTE) scheduled for Spacelab 3, currently scheduled to be launched in November, 1984. The objectives of the AFTE are to determine the effectiveness of autogenic feedback in preventing or reducing space adaptation syndrome (SAS), to monitor and record in-flight data from the crew, to determine if prediction criteria for SAS can be established, and, finally, to develop an ambulatory instrument package to mount the crew throughout the mission. The purpose of the Ambulatory Feedback System (AFS) is to record the responses of the subject during a provocative event in space and provide a real-time feedback display to reinforce the training.

  3. NAIP 2015 Imagery Feedback

    Data.gov (United States)

    Farm Service Agency, Department of Agriculture — The NAIP 2015 Imagery Feedback web application allows users to make comments and observations about the quality of the 2015 National Agriculture Imagery Program...

  4. Feedback in analog circuits

    CERN Document Server

    Ochoa, Agustin

    2016-01-01

    This book describes a consistent and direct methodology to the analysis and design of analog circuits with particular application to circuits containing feedback. The analysis and design of circuits containing feedback is generally presented by either following a series of examples where each circuit is simplified through the use of insight or experience (someone else’s), or a complete nodal-matrix analysis generating lots of algebra. Neither of these approaches leads to gaining insight into the design process easily. The author develops a systematic approach to circuit analysis, the Driving Point Impedance and Signal Flow Graphs (DPI/SFG) method that does not require a-priori insight to the circuit being considered and results in factored analysis supporting the design function. This approach enables designers to account fully for loading and the bi-directional nature of elements both in the feedback path and in the amplifier itself, properties many times assumed negligible and ignored. Feedback circuits a...

  5. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  6. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  7. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  8. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  9. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  10. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  11. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  12. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  13. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  14. Modeling of the transient mobility in disordered organic semiconductors

    NARCIS (Netherlands)

    Germs, W.C.; Van der Holst, J.M.M.; Van Mensfoort, S.L.M.; Bobbert, P.A.; Coehoorn, R.

    2011-01-01

    In non-steady-state experiments, the electrical response of devicesbased on disordered organic semiconductors often shows a large transient contribution due to relaxation of the out-of-equilibrium charge-carrier distribution. We have developed a model describing this process, based only on the

  15. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  16. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  17. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  18. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  19. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  20. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru

    2014-01-01

    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  1. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  2. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  3. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  4. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  5. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  6. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  7. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  8. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  9. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  10. MARTe at FTU: The new feedback control

    Energy Technology Data Exchange (ETDEWEB)

    Boncagni, Luca, E-mail: luca.boncagni@enea.it [EURATOM - ENEA Fusion Association, Frascati Research Centre, Division of Fusion Physics, Rome, Frascati (Italy); Sadeghi, Yahya; Carnevale, Daniele; Di Geronimo, Andrea; Varano, Gianluca; Vitelli, Riccardo [Department of Computer Science, Systems and Production, University of Rome Tor Vergata, Rome (Italy); Galperti, Critsian [Istituto di Fisica del Plasma, CNR, EURATOM-ENEA Association, Milan (Italy); Zarfati, Emanuele; Pucci, Daniele [Department Antonio Ruberti, University of Rome La Sapienza, Rome (Italy)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer We show that the MARTe is a candidate for ITER PSH. Black-Right-Pointing-Pointer We replace the old real-time feedback software using the MARTe framework. Black-Right-Pointing-Pointer We describe all the work done for the integration. - Abstract: Keeping in mind the necessities of a modern control system for fusion devices, such as modularity and a distributed architecture, an upgrade of the present FTU feedback control system was planned, envisaging also a possible reutilization in the proposed FAST experiment [1]. For standardization and efficiency purposes we decided to adopt a pre-existent ITER-relevant framework called MARTe [2], already used with success in other European Tokamak devices [3]. Following the developments shown in [4], in this paper we report on the structure of the new feedback system, and how it was integrated in the current control structure and pulse programming interface, and in the other MARTe systems already in FTU: RT-ODIN [5] and the ECRH and LH [6] satellite stations. The new feedback system has been installed in the FTU backup station (known as 'Feedback B'), which shares the input signals with the actual feedback system, in order to simplify the validation and debug of the new controller by testing it in parallel with the current one. Experimental results are then presented.

  11. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  12. Traders' strategy with price feedbacks in financial market

    OpenAIRE

    Mizuno, Takayuki; Nakano, Tohur; Takayasu, Misako; Takayasu, Hideki

    2003-01-01

    We introduce an autoregressive-type model of prices in financial market taking into account the self-modulation effect. We find that traders are mainly using strategies with weighted feedbacks of past prices. These feedbacks are responsible for the slow diffusion in short times, apparent trends and power law distribution of price changes.

  13. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    several controversially discussed questions on the nature of transport in this type of nanodevices. In contrast to previous approximate approaches, we show that the nature of transport in QCLs is sensitive to the applied bias voltage and can be tuned from the coherent to the incoherent regime. We point out that the elastic scattering at rough interfaces is among the most efficient incoherent scattering mechanisms in THz-QCLs and significantly influences the laser performance. Up to now, this has been utterly underestimated in approximate studies of THz-QCLs with direct optical transitions. All current theoretical models apply periodic (or field-periodic) boundary conditions on the transport in QCLs. Our revision of the open boundary conditions allows us to consider the QCL as an open quantum devices, instead. In this way, we illustrate that charge distributions in QCLs can develop periodicities that are only commensurable or even incommensurable with the QCL periodicity. This effect leads to efficient non-radiative transitions between the laser levels and is - due to the common periodic boundary conditions - completely missed in literature. We also propose several novel THz-QCLs with larger optical gain, lower thermal load and a higher resistivity against growth imperfections. The third part of this thesis is dedicated to the spin transport in two-dimensional semicon- ductor heterostructures. It is common to apply an approximate envelope function model (EFT) for the spin-orbit interaction in such devices, in spite of the well-known fact that EFT calculations typically incorrectly predict the spin-splitting in semiconductor heterostructures. For this reason, we represent the NEGF method in the EFT model as well as in a microscopic atomistic tight binding model. In the later model, the spin-orbit interaction is treated nonperturbatively going far beyond the approximate EFT model. We show that the numerically efficient EFT model yields results that qualitatively agree with

  14. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-01-01

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  15. Global climate feedbacks

    Energy Technology Data Exchange (ETDEWEB)

    Manowitz, B.

    1990-10-01

    The important physical, chemical, and biological events that affect global climate change occur on a mesoscale -- requiring high spatial resolution for their analysis. The Department of Energy has formulated two major initiatives under the US Global Change Program: ARM (Atmospheric Radiation Measurements), and CHAMMP (Computer Hardware Advanced Mathematics and Model Physics). ARM is designed to use ground and air-craft based observations to document profiles of atmospheric composition, clouds, and radiative fluxes. With research and models of important physical processes, ARM will delineate the relationships between trace gases, aerosol and cloud structure, and radiative transfer in the atmosphere, and will improve the parameterization of global circulation models. The present GCMs do not model important feedbacks, including those from clouds, oceans, and land processes. The purpose of this workshop is to identify such potential feedbacks, to evaluate the uncertainties in the feedback processes (and, if possible, to parameterize the feedback processes so that they can be treated in a GCM), and to recommend research programs that will reduce the uncertainties in important feedback processes. Individual reports are processed separately for the data bases.

  16. Problems and progress in radiation physics of semiconductors

    International Nuclear Information System (INIS)

    Vinetskij, V.L.

    1982-01-01

    A survey of the current status of radiation physics of semiconductors comprises the analysis of some new problems and poses the statement of concern. The essential difference between the probability of interstitial-vacancy pair occurrence W(T) in elastic collisions and the generally accepted step distribution with a typical ''threshold'' energy Tsub(d) is indicated. The role of diffusion and reaction evolution of primary defects leading to specific properties of the cluster formation process is shown. Special features of defect formation in spatially inhomogeneous semiconductors, in particular for elastic stresses present, are described. Among most important advances in the radiation physics of semiconductors there are the discovery of non-activation motion of the ''extra'' atom in silicon, the observation of a low activation energy value for the vacancy diffusion, the understanding of subthreshold mechanism of defect formation and radiation-induced diffusion, the effects of laser annealing of defects and oriented crystallization

  17. Conduit for high temperature transfer of molten semiconductor crystalline material

    Science.gov (United States)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1983-01-01

    A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

  18. Feedback Conversations: Creating Feedback Dialogues with a New Textual Tool for Industrial Design Student Feedback

    Science.gov (United States)

    Funk, Mathias; van Diggelen, Migchiel

    2017-01-01

    In this paper, the authors describe how a study of a large database of written university teacher feedback in the department of Industrial Design led to the development of a new conceptual framework for feedback and the design of a new feedback tool. This paper focuses on the translation of related work in the area of feedback mechanisms for…

  19. Transmutation doping of semiconductors by charged particles (review)

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Zakharenkov, L.F.; Shustrov, B.A.

    1992-01-01

    A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monographs and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. An analysis is made of the modeling intended to give the total numbers of donors and acceptor impurities introduced by the NTD process, to optimize the compensation coefficients, and to estimate the distributions of the dopants with depth in a semiconductor crystal. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. In view of the specific objects that have been investigated experimntally, the second section is divided into three subsections: silicon, III-V compounds, other semiconductors and related materials (such as high-temperature superconductors, ferroelectric films, etc.). An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. 45 refs

  20. Situated Formative Feedback

    DEFF Research Database (Denmark)

    Lukassen, Niels Bech; Wahl, Christian; Sorensen, Elsebeth Korsgaard

    refer to this type of feedback as, Situated Formative Feedback (SFF). As a basis for exploring, identifying and discussing relevant aspects of SFF the paper analyses qualitative data from a Moodle dialogue. Data are embedded in the qualitative analytic program Nvivo and are analysed with a system...... theoretical textual analysis method. Asynchronous written dialogue from an online master’s course at Aalborg University forms the empirical basis of the study. The findings suggests in general that students play an essential role in SFF and that students and educators are equal in the COP, but holds different...

  1. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  2. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  3. Dynamic thermoelectricity in uniform bipolar semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Volovichev, I.N., E-mail: vin@ire.kharkov.ua

    2016-07-01

    The theory of the dynamic thermoelectric effect has been developed. The effect lies in an electric current flowing in a closed circuit that consists of a uniform bipolar semiconductor, in which a non-uniform temperature distribution in the form of the traveling wave is created. The calculations are performed for the one-dimensional model in the quasi-neutrality approximation. It was shown that the direct thermoelectric current prevails, despite the periodicity of the thermal excitation, the circuit homogeneity and the lack of rectifier properties of the semiconductor system. Several physical reasons underlining the dynamic thermoelectric effect are found. One of them is similar to the Dember photoelectric effect, its contribution to the current flowing is determined by the difference in the electron and hole mobilities, and is completely independent of the carrier Seebeck coefficients. The dependence of the thermoelectric short circuit current magnitude on the semiconductor parameters, as well as on the temperature wave amplitude, length and velocity is studied. It is shown that the magnitude of the thermoelectric current is proportional to the square of the temperature wave amplitude. The dependence of the thermoelectric short circuit current on the temperature wave length and velocity is the nonmonotonic function. The optimum values for the temperature wave length and velocity, at which the dynamic thermoelectric effect is the greatest, have been deduced. It is found that the thermoelectric short circuit current changes its direction with decreasing the temperature wave length under certain conditions. The prospects for the possible applications of the dynamic thermoelectric effect are also discussed.

  4. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  5. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  6. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  7. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  8. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  9. A reduced feedback proportional fair multiuser scheduling scheme

    KAUST Repository

    Shaqfeh, Mohammad

    2011-12-01

    Multiuser switched-diversity scheduling schemes were recently proposed in order to overcome the heavy feedback requirements of conventional opportunistic scheduling schemes by applying a threshold-based, distributed and ordered scheduling mechanism. A slight reduction in the prospected multiuser diversity gains is an acceptable trade-off for great savings in terms of required channel-state-information feedback messages. In this work, we propose a novel proportional fair multiuser switched-diversity scheduling scheme and we demonstrate that it can be optimized using a practical and distributed method to obtain the per-user feedback thresholds. We demonstrate by numerical examples that our reduced feedback proportional fair scheduler operates within 0.3 bits/sec/Hz from the achievable rates by the conventional full feedback proportional fair scheduler in Rayleigh fading conditions. © 2011 IEEE.

  10. Novel Reduced-Feedback Wireless Communication Systems

    KAUST Repository

    Shaqfeh, Mohammad Obaidah

    2011-11-20

    including fairness in resources distribution across the active terminals and distributed processing at the MAC layer level. In addition our scheme operates close to the upper capacity limits of achievable transmission rates over wireless links. We have also proposed another hybrid scheme that enables adjusting the feedback load flexibly based on rates requirements. We are currently investigating other novel ideas to design reduced-feedback communication systems.

  11. Credit Market Information Feedback

    OpenAIRE

    Balasubramanyan, Lakshmi; Craig, Ben R.; Thomson, James B.; Zaman, Saeed

    2015-01-01

    We examine how a combination of credit market and asset quality information can jointly be used in assessing bank franchise value. We find that expectations of future credit demand and future asset quality explain contemporaneous bank franchise value, indicative of the feedback in credit market information and its consequent impact on bank franchise value.

  12. Continuous feedback fluid queues

    NARCIS (Netherlands)

    Scheinhardt, Willem R.W.; van Foreest, N.D.; Mandjes, M.R.H.

    2003-01-01

    We investigate a fluid buffer which is modulated by a stochastic background process, while the momentary behavior of the background process depends on the current buffer level in a continuous way. Loosely speaking the feedback is such that the background process behaves `as a Markov process' with

  13. Feedback i undervisningen

    DEFF Research Database (Denmark)

    Kirkegaard, Preben Olund

    2015-01-01

    undervisningsdifferentiering, feedback på læreprocesser, formativ og summativ evaluering, observationer og analyse af undervisning samt lærernes teamsamarbejde herom. Praktikken udgør et særligt læringsrum i læreruddannelsen. Samspillet mellem studerende, praktiklærere og undervisere giver den studerende en unik mulighed...

  14. Portfolio, refleksion og feedback

    DEFF Research Database (Denmark)

    Hansen, Jens Jørgen; Qvortrup, Ane; Christensen, Inger-Marie F.

    2017-01-01

    Denne leder definerer indledningsvist begrebet portfolio og gør rede for anvendelsesmuligheder i en uddannelseskontekst. Dernæst behandles portfoliometodens kvalitet og effekt for læring og undervisning og de centrale begreber refleksion, progression og feedback præsenteres og diskuteres. Herefter...

  15. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  16. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  17. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  18. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  19. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  20. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  1. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  2. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  3. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  4. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  5. Beam bunch feedback

    International Nuclear Information System (INIS)

    Lambertson, G.

    1995-09-01

    When the electromagnetic fields that are excited by the passage of a bundle of charged particles persist to act upon bunches that follow, then the motions of the bunches are coupled. This action between bunches circulating on a closed orbit can generate growing patterns of bunch excursions. Such growth can often be suppressed by feedback systems that detect the excursion and apply corrective forces to the bunches. To be addressed herein is feedback that acts on motions of the bunch body centers. In addition to being useful for suppressing the spontaneous growth of coupled-bunch motions, such feedback can be used to damp transients in bunches injected into an accelerator or storage ring; for hadrons which lack strong radiation damping, feedback is needed to avoid emittance growth through decoherence. Motions excited by noise in magnetic fields or accelerating rf can also be reduced by using this feedback. Whether the action is on motions that are transverse to the closed orbit or longitudinal, the arrangement is the same. Bunch position is detected by a pickup and that signal is processed and directed to a kicker that may act upon the same bunch or some other portion of the collective beam pattern. Transverse motion is an oscillation with angular frequency ν perpendicular ω o where ω o is the orbital frequency 2π line-integral o. Longitudinal synchrotron oscillation occurs at frequency ω s = ν s ω o . The former is much more rapid, ν perpendicular being on the order of 10 while ν s is typically about 10 minus 1 to 10 minus 2

  6. Synthesis of semiconductor polymers by inductive plasma; Sintesis de polimeros semiconductores por plasmas inductivos

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, G.; Cruz, G.; Olayo, M.G. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico); Morales, J. [UAM-I, 09340 Mexico D.F. (Mexico)

    2003-07-01

    When carrying out the synthesis of semiconductor polymers by plasma it is important to consider the electric arrangement of the discharge since this it influences in the distribution of the energy of the particles in the reactor. The main electric arrangements in those that are developed the brightness discharges of radio frequency are resistive, capacitive and inductive. In the Laboratory of Materials processing by plasma of the ININ its have been worked different synthesis of polymers with resistive arrangements with good results. In this work the results of the synthesis and characterization of poly aniline and chlorate polyethylene by inductive plasma are presented. (Author)

  7. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  8. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  9. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  10. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  11. MEDICAL STUDENTS’ FEEDBACK ABOUT FORMATIVE ASSESSMENT PATTERN

    Directory of Open Access Journals (Sweden)

    Navajothi

    2016-03-01

    Full Text Available BACKGROUND Pharmacology is the toughest subject in the II MBBS syllabus. Students have to memorise a lot about the drugs’ name and classification. We are conducting internal assessment exams after completion of each system. Number of failures will be more than 60% in the internal assessments conducted during first six months of II MBBS course. AIM To assess the formative assessment pattern followed in our institution with the students’ feedback and modify the pattern according to the students’ feedback. SETTINGS & DESIGN Prospective Observational Study conducted at Department of Pharmacology, Government Sivagangai Medical College, Sivagangai, Tamil Nadu. MATERIALS AND METHODS Questionnaire was prepared and distributed to the 300 students of Government Sivagangai Medical College and feedback was collected. Data collected was analysed in Microsoft Excel 2007 version. RESULTS Received feedback from 274 students. Most (80% of the students wanted to attend the tests in all systems. Monthly assessment test was preferred by 47% of the students. Students who preferred to finish tests before holidays was 57%. Most (56% of the students preferred tests for 1 hour. Multiple choice question (MCQ type was preferred by 43%, which is not a routine question pattern. Only 7% preferred viva. Recall type of questions was preferred by 41% of the students. CONCLUSION In our institution, internal assessment is conducted as per the students’ mind setup. As the feedback has been the generally followed one, we will add MCQs in the forthcoming tests. Application type questions will be asked for more marks than Recall type of questions.

  12. Positron annihilation spectroscopy in defects of semiconductors

    CERN Document Server

    Fujinami, M

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

  13. Programmable and coherent crystallization of semiconductors

    KAUST Repository

    Yu, Liyang

    2017-03-04

    The functional properties and technological utility of polycrystalline materials are largely determined by the structure, geometry, and spatial distribution of their multitude of crystals. However, crystallization is seeded through stochastic and incoherent nucleation events, limiting the ability to control or pattern the microstructure, texture, and functional properties of polycrystalline materials. We present a universal approach that can program the microstructure of materials through the coherent seeding of otherwise stochastic homogeneous nucleation events. The method relies on creating topographic variations to seed nucleation and growth at designated locations while delaying nucleation elsewhere. Each seed can thus produce a coherent growth front of crystallization with a geometry designated by the shape and arrangement of seeds. Periodic and aperiodic crystalline arrays of functional materials, such as semiconductors, can thus be created on demand and with unprecedented sophistication and ease by patterning the location and shape of the seeds. This approach is used to demonstrate printed arrays of organic thin-film transistors with remarkable performance and reproducibility owing to their demonstrated spatial control over the microstructure of organic and inorganic polycrystalline semiconductors.

  14. Cathodoluminescence of semiconductors in the scanning electron microscope

    International Nuclear Information System (INIS)

    Noriegas, Javier Piqueras de

    2008-01-01

    Full text: Cathodoluminescence (CL) in the scanning electron microscope (SEM) is a nondestructive technique, useful for characterization of optical and electronic properties of semiconductors, with spatial resolution. The contrast in the images of CL is related to the presence of crystalline defects, precipitates or impurities and provides information on their spatial distribution. CL spectra allows to study local energy position of localized electronic states. The application of the CL is extended to semiconductor very different characteristics, such as bulk material, heterostructures, nanocrystalline film, porous semiconductor, nanocrystals, nanowires and other nano-and microstructures. In the case of wafers, provides information on the homogeneity of their electronic characteristics, density of dislocations, grain sub frontiers, distribution of impurities and so on. while on the study of heterostructures CL images can determine, for example, the presence of misfit dislocations at the interface between different sheets, below the outer surface of the sample. In the study of other low dimensional structures, such as nanocrystalline films, nanoparticles and nano-and microstructures are observed elongated in some cases quantum confinement effects from the CL spectra. Moreover, larger structures, the order of hundreds of nanometers, with forms of wires, tubes or strips, is that in many semiconductor materials, mainly oxides, the behavior of luminescence is different from bulk material. The microstructures have a different structure of defects and a greater influence of the surface, which in some cases leads to a higher emission efficiency and a different spectral distribution. The presentation describes the principle of the CL technique and examples of its application in the characterization of a wide range of both semiconductor materials of different composition, and of different sizes ranging from nanostructures to bulk samples

  15. Ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Gusev, V.; Gusevova, M.

    1980-01-01

    The historical development is described of the method of ion implantation, the physical research of the method, its technological solution and practical uses. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material, ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions. (M.S.)

  16. Ion implantation in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, V; Gusevova, M

    1980-06-01

    The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.

  17. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  18. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  19. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  20. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.