WorldWideScience

Sample records for direct wafer bonding

  1. Wafer bonding applications and technology

    CERN Document Server

    Gösele, Ulrich

    2004-01-01

    During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

  2. GeSn-on-insulator substrate formed by direct wafer bonding

    Science.gov (United States)

    Lei, Dian; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Wang, Bing; Gong, Xiao; Tan, Chuan Seng; Yeo, Yee-Chia

    2016-07-01

    GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge1-xSnx layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO2 on Ge1-xSnx, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge1-xSnx layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge1-xSnx epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge1-xSnx film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

  3. GeSn-on-insulator substrate formed by direct wafer bonding

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Lee, Kwang Hong; Wang, Bing [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); Bao, Shuyu [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Tan, Chuan Seng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2016-07-11

    GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge{sub 1-x}Sn{sub x} layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO{sub 2} on Ge{sub 1-x}Sn{sub x}, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge{sub 1-x}Sn{sub x} layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge{sub 1-x}Sn{sub x} epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge{sub 1-x}Sn{sub x} film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

  4. Fabrication and Characterization of Capacitive Micromachined Ultrasonic Transducers with Low-Temperature Wafer Direct Bonding

    Directory of Open Access Journals (Sweden)

    Xiaoqing Wang

    2016-12-01

    Full Text Available This paper presents a fabrication method of capacitive micromachined ultrasonic transducers (CMUTs by wafer direct bonding, which utilizes both the wet chemical and O2plasma activation processes to decrease the bonding temperature to 400 °C. Two key surface properties, the contact angle and surface roughness, are studied in relation to the activation processes, respectively. By optimizing the surface activation parameters, a surface roughness of 0.274 nm and a contact angle of 0° are achieved. The infrared images and static deflection of devices are assessed to prove the good bonding effect. CMUTs having silicon membranes with a radius of 60 μm and a thickness of 2 μm are fabricated. Device properties have been characterized by electrical and acoustic measurements to verify their functionality and thus to validate this low-temperature process. A resonant frequency of 2.06 MHz is obtained by the frequency response measurements. The electrical insertion loss and acoustic signal have been evaluated. This study demonstrates that the CMUT devices can be fabricated by low-temperature wafer direct bonding, which makes it possible to integrate them directly on top of integrated circuit (IC substrates.

  5. Handbook of wafer bonding

    CERN Document Server

    Ramm, Peter; Taklo, Maaike M V

    2011-01-01

    Written by an author and editor team from microsystems companies and industry-near research organizations, this handbook and reference presents dependable, first-hand information on bonding technologies.In the first part, researchers from companies and institutions around the world discuss the most reliable and reproducible technologies for the production of bonded wafers. The second part is devoted to current and emerging applications, including microresonators, biosensors and precise measuring devices.

  6. Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

    Directory of Open Access Journals (Sweden)

    Kewei Gong

    2017-01-01

    Full Text Available Successful direct wafer bonding between InP and silicon-on-insulator (SOI wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.

  7. Transparent and electrically conductive GaSb/Si direct wafer bonding at low temperatures by argon-beam surface activation

    Science.gov (United States)

    Predan, F.; Reinwand, D.; Klinger, V.; Dimroth, F.

    2015-10-01

    Direct wafer bonds of the material system n-GaSb/n-Si have been achieved by means of a low-temperature direct wafer bonding process, enabling an optical transparency of the bonds along with a high electrical conductivity of the boundary layer. In the used technique, the surfaces are activated by sputter-etching with an argon fast-atom-beam (FAB) and bonded in ultra-high vacuum. The bonds were annealed at temperatures between 300 and 400 °C, followed by an optical, mechanical and electrical characterization of the interface. Additionally, the influence of the sputtering on the surface topography of the GaSb was explicitly investigated. Fully bonded wafer pairs with high bonding strengths were found, as no blade could be inserted into the bonds without destroying the samples. The interfacial resistivities of the bonded wafers were significantly reduced by optimizing the process parameters, by which Ohmic interfacial resistivities of less than 5 mΩ cm2 were reached reproducibly. These promising results make the monolithic integration of GaSb on Si attractive for various applications.

  8. 300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology

    Science.gov (United States)

    Widiez, Julie; Sollier, Sébastien; Baron, Thierry; Martin, Mickaël; Gaudin, Gweltaz; Mazen, Frédéric; Madeira, Florence; Favier, Sylvie; Salaun, Amélie; Alcotte, Reynald; Beche, Elodie; Grampeix, Helen; Veytizou, Christelle; Moulet, Jean-Sébastien

    2016-04-01

    This paper reports the first demonstration of 300 mm In0.53Ga0.47As-on-insulator (InGaAs-OI) substrates. The use of direct wafer bonding and the Smart Cut™ technology lead to the transfer of high quality InGaAs layer on large Si wafer size (300 mm) at low effective cost, taking into account the reclaim of the III-V on Si donor substrate. The optimization of the three key building blocks of this technology is detailed. (1) The III-V epitaxial growth on 300 mm Si wafers has been optimized to decrease the defect density. (2) For the first time, hydrogen-induced thermal splitting is made inside the indium phosphide (InP) epitaxial layer and a wide implantation condition ranges is observed on the contrary to bulk InP. (3) Finally a specific direct wafer bonding with alumina oxide has been chosen to avoid outgas diffusion at the alumina oxide/III-V compound interface.

  9. A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding

    Institute of Scientific and Technical Information of China (English)

    LIANG Ting; GUO Xia; GUAN Bao-Lu; GUO Jing; GU Xiao-Ling; LIN Qiao-Ming; SHEN Guang-Di

    2007-01-01

    A red-light AlGaInP light emitting diode(LED)is fabricated by,using direct wafer bonding technology.Taking N-GaN wafer as the transparent substrate,the red-light LED is flip-chiped onto a structured silicon submount.Electronic luminance(EL)test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer.Current-voltage(Ⅰ-Ⅴ)measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V<1.5V).In the large voltage region (V>1.5 V),the Ⅰ-Ⅴ characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.

  10. GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off

    Science.gov (United States)

    Mu, Fengwen; Morino, Yuki; Jerchel, Kathleen; Fujino, Masahisa; Suga, Tadatomo

    2017-09-01

    Room temperature GaN-Si direct wafer bonding was done by surface activated bonding (SAB). At first, a feasibility study using GaN template has been done. Then, crystal-face dependence of the bonding results for freestanding GaN substrate has been investigated between Ga-face and N-face. The results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy and larger bonded area. This difference should be caused by their different surface roughnesses after chemical-mechanical polishing (CMP). Besides, both of the structure and composition of the two kinds of interfaces were investigated to understand the bonding mechanisms. The phenomenon of Ga-enrichment during surface activation and Ga-diffusion into Si at room temperature for both Ga-face bonding and N-face bonding has been confirmed.

  11. Wafer bonding using Cu-Sn intermetallic bonding layers

    NARCIS (Netherlands)

    Flötgen, C.; Pawlak, M.; Pabo, E.; Wiel, H.J. van de; Hayes, G.R.; Dragoi, V.

    2014-01-01

    Wafer-level Cu-Sn intermetallic bonding is an interesting process for advanced applications in the area of MEMS and 3D interconnects. The existence of two intermetallic phases for Cu-Sn system makes the wafer bonding process challenging. The impact of process parameters on final bonding layer

  12. Biocompatible "click" wafer bonding for microfluidic devices.

    Science.gov (United States)

    Saharil, Farizah; Carlborg, Carl Fredrik; Haraldsson, Tommy; van der Wijngaart, Wouter

    2012-09-07

    We introduce a novel dry wafer bonding concept designed for permanent attachment of micromolded polymer structures to surface functionalized silicon substrates. The method, designed for simultaneous fabrication of many lab-on-chip devices, utilizes a chemically reactive polymer microfluidic structure, which rapidly bonds to a functionalized substrate via"click" chemistry reactions. The microfluidic structure consists of an off-stoichiometry thiol-ene (OSTE) polymer with a very high density of surface bound thiol groups and the substrate is a silicon wafer that has been functionalized with common bio-linker molecules. We demonstrate here void free, and low temperature (silane functionalized silicon wafer.

  13. Silicon waveguides produced by wafer bonding

    DEFF Research Database (Denmark)

    Poulsen, Mette; Jensen, Flemming; Bunk, Oliver

    2005-01-01

    X-ray waveguides are successfully produced employing standard silicon technology of UV photolithography and wafer bonding. Contrary to theoretical expectations for similar systems even 100 mu m broad guides of less than 80 nm height do not collapse and can be used as one dimensional waveguides...

  14. Biocompatible "click" wafer bonding for microfluidic devices

    OpenAIRE

    Saharil, Farizah; Carlborg, Carl Fredrik; Haraldsson, Tommy; van der Wijngaart, Wouter

    2012-01-01

    We introduce a novel dry wafer bonding concept designed for permanent attachment of micromolded polymer structures to surface functionalized silicon substrates. The method, designed for simultaneous fabrication of many lab-on-chip devices, utilizes a chemically reactive polymer microfluidic structure, which rapidly bonds to a functionalized substrate via "click" chemistry reactions. The microfluidic structure consists of an off-stoichiometry thiol-ene (OSTE) polymer with a very high density o...

  15. The influence of wafer dimensions on the contact wave velocity in silicon wafer bonding

    DEFF Research Database (Denmark)

    Bengtsson, S.; Ljungberg, Karin; Vedde, Jan

    1996-01-01

    The contact wave velocity in silicon wafer bonding is experimentally found to decrease with wafer thickness and to be only weakly dependent on wafer diameter. Wafers of different thicknesses ranging from 270 to 5000 mu m, were dipped in HF:H2O before bonding to give the surfaces hydrophobic...... stored in the material is increased, and the contact wave velocity is decreased. (C) 1996 American Institute of Physics....

  16. Novel 1.3-micron high-speed directly modulated semiconductor laser device designs and the development of wafer bonding technology for compliant-substrate fabrication

    Science.gov (United States)

    Greenberg, Joseph

    2000-10-01

    High speed optical sources at 1.3 mum are required to drive the fiber optic infrastructure around the world. Of the three components that make up an optical link, these sources limit the overall data transmission capacity of these networks. The importance of operating at 1.3 mum, has led device engineers to rely on InP-based devices, though inferior in many ways to devices based on GaAs. This work seeks to develop new device designs to improve the directly modulated bandwidths of 1.3 mum lasers. Elevated temperatures degrade the DC and high speed performance of semiconductor lasers. InP-based devices are especially susceptible to temperature variations. Lasers were flip chip bonded to diamond heat sinks to improve heat removal from these devices. Although dramatic improvements were seen in their DC performance, the lasers' high frequency response did not improve. Other factors such, as carrier heating, likely limited the performance of these devices. Device designs on GaAs emitting at 1.3 mum were sought as a replacement for the troublesome InP devices. Laser structures employing ordered quantum wells on GaAs (111) substrates have been proposed. Theoretical calculations indicate that 1.3 mum emission should be achievable, and 1.55 mum emission may be possible. Experimental evidence from devices based on GaAs (111) indicates that such lasers should outperform their InP-based counterparts. Lasers grown on InGaAs-like substrates, either bulk ternary or compliant substrates, are promising candidates for improving 1.3 mum device performance. In anticipation of availability of such substrates, a toolkit for designing InxGa1--xAs quantum well lasers on InyGa 1--yAs substrates has been developed. The choice of well and substrate compositions, well width and desired percentage strain combinations emitting at 1.3 mum can be made using a few simple graphs. An analytical valence band model has been employed to qualitatively test competing device designs. Twist bonded compliant

  17. MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

    Science.gov (United States)

    Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

    2013-12-03

    In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

  18. MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

    Energy Technology Data Exchange (ETDEWEB)

    Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

    2013-12-03

    In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

  19. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  20. Sulfur passivation techniques for III-V wafer bonding

    Science.gov (United States)

    Jackson, Michael James

    The use of direct wafer bonding in a multijunction III-V solar cell structure requires the formation of a low resistance bonded interface with minimal thermal treatment. A wafer bonded interface behaves as two independent surfaces in close proximity, hence a major source of resistance is Fermi level pinning common in III-V surfaces. This study demonstrates the use of sulfur passivation in III-V wafer bonding to reduce the energy barrier at the interface. Two different sulfur passivation processes are addressed. A dry sulfur passivation method that utilizes elemental sulfur vapor activated by ultraviolet light in vacuum is compared with aqueous sulfide and native oxide etch treatments. Through the addition of a sulfur desorption step in vacuum, the UV-S treatment achieves bondable surfaces free of particles contamination or surface roughening. X-ray photoelectron spectroscopy measurements of the sulfur treated GaAs surfaces find lower levels of oxide and the appearance of sulfide species. After 4 hrs of air exposure, the UV-S treated GaAs actually showed an increase in the amount of sulfide bonded to the semiconductor, resulting in less oxidation compared to the aqueous sulfide treatment. Large area bonding is achieved for sulfur treated GaAs / GaAs and InP / InP with bulk fracture strength achieved after annealing at 400 °C and 300 °C respectively, without large compressive forces. The electrical conductivity across a sulfur treated 400 °C bonded n-GaAs/n-GaAs interface significantly increased with a short anneal (1-2 minutes) at elevated temperatures (50--600 °C). Interfaces treated with the NH4OH oxide etch, on the other hand, exhibited only mild improvement in accordance with previously published studies in this area. TEM and STEM images revealed similar interfacial microstructure changes with annealing for both sulfur treated and NH4OH interfaces, whereby some areas have direct semiconductor-semiconductor contact without any interfacial layer. Fitting the

  1. Fabricating Capacitive Micromachined Ultrasonic Transducers with Wafer Bonding Technique

    Directory of Open Access Journals (Sweden)

    Anil ARORA

    2008-06-01

    Full Text Available We report the fabrication of capacitive micromachined ultrasonic transducer by wafer bonding technique. Membrane is transferred from SOI wafer to the prime wafer having silicon dioxide cavity. The thickness of cavity height depends on silicon dioxide grown on prime wafer by dry/wet oxidation. Thinning of device wafer of SOI by oxidation, controls membrane thickness. Two wafers are bonded in vacuum under optimized controlled parameters. Using this method, we can get single crystal silicon as membrane, whose mechanical and electrical parameters are well known. Silicon membrane is free from stress and density variation. Focused Ion Beam etching and laser Doppler Vibrometer were used to do structural and electrical characterization respectively. The measured resonance frequency of fabricated device i.e. 2.24 MHz is much closer to the designed value i.e. 2.35 MHz.

  2. Wafer level bonding using localized radio-frequency induction heating

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A wafer level bonding technique by localized induction heating has been developed and demonstrated in this paper.A suitable fabrication process scheme has also been established for the localized induction heating and bonding.It takes only about 20 seconds to complete the bonding process.The temperatures of solder loops and the central area of solder loops are above 300°C and below 70°C,respectively.Due to the solder reflow,robust and hermetic glass wafer bonding is accomplished,and the average tensile strength is 6.42 MPa.Under-heated or over-heated bonding has been found to result in cracks at bonding interfaces and sputtering layer,which degrades the bonding qualities.

  3. Si-gold-glass hybrid wafer bond for 3D-MEMS and wafer level packaging

    Science.gov (United States)

    Reddy, Jayaprakash; Pratap, Rudra

    2017-01-01

    We report a relatively low temperature (MEMS device integration and wafer level packaging. We demonstrate the process by realizing a simple MEMS cantilever beam and a complex MEMS gyroscope structure. These structures are characterized for ohmic contact and electromechanical response to verify the electrical interconnect and the mechanical strength of the structure at the bond interface.

  4. Cost-Efficient Wafer-Level Capping for MEMS and Imaging Sensors by Adhesive Wafer Bonding

    Directory of Open Access Journals (Sweden)

    Simon J. Bleiker

    2016-10-01

    Full Text Available Device encapsulation and packaging often constitutes a substantial part of the fabrication cost of micro electro-mechanical systems (MEMS transducers and imaging sensor devices. In this paper, we propose a simple and cost-effective wafer-level capping method that utilizes a limited number of highly standardized process steps as well as low-cost materials. The proposed capping process is based on low-temperature adhesive wafer bonding, which ensures full complementary metal-oxide-semiconductor (CMOS compatibility. All necessary fabrication steps for the wafer bonding, such as cavity formation and deposition of the adhesive, are performed on the capping substrate. The polymer adhesive is deposited by spray-coating on the capping wafer containing the cavities. Thus, no lithographic patterning of the polymer adhesive is needed, and material waste is minimized. Furthermore, this process does not require any additional fabrication steps on the device wafer, which lowers the process complexity and fabrication costs. We demonstrate the proposed capping method by packaging two different MEMS devices. The two MEMS devices include a vibration sensor and an acceleration switch, which employ two different electrical interconnection schemes. The experimental results show wafer-level capping with excellent bond quality due to the re-flow behavior of the polymer adhesive. No impediment to the functionality of the MEMS devices was observed, which indicates that the encapsulation does not introduce significant tensile nor compressive stresses. Thus, we present a highly versatile, robust, and cost-efficient capping method for components such as MEMS and imaging sensors.

  5. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  6. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, Vincent L.; Berenschot, J.W.; Elwenspoek, Miko; Fluitman, Jan H.J

    1995-01-01

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a w

  7. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, Vincent L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for as well resist spinning and layer patterning as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a

  8. Electronic properties of interfaces produced by silicon wafer hydrophilic bonding

    Energy Technology Data Exchange (ETDEWEB)

    Trushin, Maxim

    2011-07-15

    The thesis presents the results of the investigations of electronic properties and defect states of dislocation networks (DNs) in silicon produced by wafers direct bonding technique. A new insight into the understanding of their very attractive properties was succeeded due to the usage of a new, recently developed silicon wafer direct bonding technique, allowing to create regular dislocation networks with predefined dislocation types and densities. Samples for the investigations were prepared by hydrophilic bonding of p-type Si (100) wafers with same small misorientation tilt angle ({proportional_to}0.5 ), but with four different twist misorientation angles Atw (being of < , 3 , 6 and 30 , respectively), thus giving rise to the different DN microstructure on every particular sample. The main experimental approach of this work was the measurements of current and capacitance of Schottky diodes prepared on the samples which contained the dislocation network at a depth that allowed one to realize all capabilities of different methods of space charge region spectroscopy (such as CV/IV, DLTS, ITS, etc.). The key tasks for the investigations were specified as the exploration of the DN-related gap states, their variations with gradually increasing twist angle Atw, investigation of the electrical field impact on the carrier emission from the dislocation-related states, as well as the establishing of the correlation between the electrical (DLTS), optical (photoluminescence PL) and structural (TEM) properties of DNs. The most important conclusions drawn from the experimental investigations and theoretical calculations can be formulated as follows: - DLTS measurements have revealed a great difference in the electronic structure of small-angle (SA) and large-angle (LA) bonded interfaces: dominating shallow level and a set of 6-7 deep levels were found in SA-samples with Atw of 1 and 3 , whereas the prevalent deep levels - in LA-samples with Atw of 6 and 30 . The critical twist

  9. Biocompatible silicon wafer bonding for biomedical microdevices

    Science.gov (United States)

    Hansford, Derek; Desai, Tejal A.; Tu, Jay K.; Ferrari, Mauro

    1998-03-01

    In this paper,several candidate bonding materials are reviewed for use in biomedical microdevices. These include poly propylmethacrylate (PPMA), poly methylmethacrylate (PMMA), a copolymer of poly methacrylate and two types of silicone gels. They were evaluated based on their cytotoxicity and bond strength, as well as several other qualitative assessments. The cytotoxicity was determined through a cell growth assay protocol in which cells were grown on the various substrate and their growth was compared to cells grown on control substrate. The adhesive strength was assessed by using a pressurized plate test in which the adhesive interface was pressurized to failure. All of the substrate were found to be non-cytotoxic in an inert manner except for the industrial silicone adhesive gel. The adhesive strengths of the various materials are compared to each other and to previously published adhesive strengths. All of the materials were found to have a sufficient bonding strength for biomedical applications, but several other factors were determined that limit the use of each material.

  10. Materials integration for high-performance photovoltaics by wafer bonding

    Science.gov (United States)

    Zahler, James Michael

    The fundamental efficiency limit for state of the art triple-junction photovoltaic devices is being approached. By allowing integration of non-lattice-matched materials in monolithic structures, wafer bonding enables novel photovoltaic devices that have a greater number of subcells to improve the discretization of the solar spectrum, thus extending the efficiency limit of the devices. Additionally, wafer bonding enables the integration of non-lattice-matched materials with foreign substrates to confer desirable properties associated with the handle substrate on the solar cell structure, such as reduced mass, increased thermal conductivity, and improved mechanical toughness. This thesis outlines process development and characterization of wafer bonding integration technologies essential for transferring conventional triple-junction solar cell designs to potentially lower cost Ge/Si epitaxial templates. These epitaxial templates consist of a thin film of single-crystal Ge on a Si handle substrate. Additionally, a novel four-junction solar cell design consisting of non-lattice matched subcells of GaInP, GaAs, InGaAsP, and InGaAs based on InP/Si wafer-bonded epitaxial templates is proposed and InP/Si template fabrication and characterization is pursued. In this thesis the detailed-balance theory of the thermodynamic limiting performance of solar cell efficiency is applied to several device designs enabled by wafer bonding and layer exfoliation. The application of the detailed-balance theory to the novel four-junction cell described above shows that operating under 100 suns at 300 K a maximum efficiency of 54.9% is achievable with subcell bandgaps of 1.90, 1.42, 1.02, and 0.60 eV, a material combination achievable by integrating two wide-bandgap subcells lattice matched to GaAs and two narrow-bandgap subcells lattice matched to InP. Wafer bonding and layer transfer processes with sufficient quality to enable subsequent material characterization are demonstrated for both

  11. Fabrication of capacitive micromachined ultrasonic transducers based on adhesive wafer bonding technique

    Science.gov (United States)

    Li, Zhenhao; Wong, Lawrence L. P.; Chen, Albert I. H.; Na, Shuai; Sun, Jame; Yeow, John T. W.

    2016-11-01

    This paper reports the fabrication process of wafer bonded capacitive micromachined ultrasonic transducers (CMUTs) using photosensitive benzocyclobutene as a polymer adhesive. Compared with direct bonding and anodic bonding, polymer adhesive bonding provides good tolerance to wafer surface defects and contamination. In addition, the low process temperature of 250 °C is compatible with standard CMOS processes. Single-element CMUTs consisting of cells with a diameter of 46 µm and a cavity depth of 323 nm were fabricated. In-air and immersion acoustic characterizations were performed on the fabricated CMUTs, demonstrating their capability for transmitting and receiving ultrasound signals. An in-air resonance frequency of 5.47 MHz was measured by a vibrometer under a bias voltage of 300 V.

  12. Chemical strategies for die/wafer submicron alignment and bonding.

    Energy Technology Data Exchange (ETDEWEB)

    Martin, James Ellis; Baca, Alicia I.; Chu, Dahwey; Rohwer, Lauren Elizabeth Shea

    2010-09-01

    This late-start LDRD explores chemical strategies that will enable sub-micron alignment accuracy of dies and wafers by exploiting the interfacial energies of chemical ligands. We have micropatterned commensurate features, such as 2-d arrays of micron-sized gold lines on the die to be bonded. Each gold line is functionalized with alkanethiol ligands before the die are brought into contact. The ligand interfacial energy is minimized when the lines on the die are brought into registration, due to favorable interactions between the complementary ligand tails. After registration is achieved, standard bonding techniques are used to create precision permanent bonds. We have computed the alignment forces and torque between two surfaces patterned with arrays of lines or square pads to illustrate how best to maximize the tendency to align. We also discuss complex, aperiodic patterns such as rectilinear pad assemblies, concentric circles, and spirals that point the way towards extremely precise alignment.

  13. Fusion bonding of Si wafers investigated by x ray diffraction

    DEFF Research Database (Denmark)

    Weichel, Steen; Grey, Francois; Rasmussen, Kurt

    2000-01-01

    The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from...... the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 degrees C, and increases abruptly up to temperatures of 1000 degrees C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic...

  14. Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, V. I., E-mail: vivdov@gmail.com; Ubyivovk, E. V.; Vyvenko, O. F. [St.-Petersburg State University (Russian Federation)

    2013-02-15

    The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60 Degree-Sign zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2 Degree-Sign , whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60 Degree-Sign dislocations, the majority of which are extended along one direction, which does not coincide with the Left-Pointing-Angle-Bracket 110 Right-Pointing-Angle-Bracket directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.

  15. 1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies

    2013-08-30

    The goal of 1366 Direct Wafer™ is to drastically reduce the cost of silicon-based PV by eliminating the cost barrier imposed by sawn wafers. The key characteristics of Direct Wafer are 1) kerf-free, 156-mm standard silicon wafers 2) high throughput for very low CAPEX and rapid scale up. Together, these characteristics will allow Direct Wafer™ to become the new standard for silicon PV wafers and will enable terawatt-scale PV – a prospect that may not be possible with sawn wafers. Our single, high-throughput step will replace the expensive and rate-limiting process steps of ingot casting and sawing, thereby enabling drastically lower wafer cost. This High-Impact PV Supply Chain project addressed the challenges of scaling Direct Wafer technology for cost-effective, high-throughput production of commercially viable 156 mm wafers. The Direct Wafer process is inherently simple and offers the potential for very low production cost, but to realize this, it is necessary to demonstrate production of wafers at high-throughput that meet customer specifications. At the start of the program, 1366 had demonstrated (with ARPA-E funding) increases in solar cell efficiency from 10% to 15.9% on small area (20cm2), scaling wafer size up to the industry standard 156mm, and demonstrated initial cell efficiency on larger wafers of 13.5%. During this program, the throughput of the Direct Wafer furnace was increased by more than 10X, simultaneous with quality improvements to meet early customer specifications. Dedicated equipment for laser trimming of wafers and measurement methods were developed to feedback key quality metrics to improve the process and equipment. Subsequent operations served both to determine key operating metrics affecting cost, as well as generating sample product that was used for developing downstream processing including texture and interaction with standard cell processing. Dramatic price drops for silicon wafers raised the bar significantly, but the

  16. 1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies

    2013-08-30

    The goal of 1366 Direct Wafer™ is to drastically reduce the cost of silicon-based PV by eliminating the cost barrier imposed by sawn wafers. The key characteristics of Direct Wafer are 1) kerf-free, 156-mm standard silicon wafers 2) high throughput for very low CAPEX and rapid scale up. Together, these characteristics will allow Direct Wafer™ to become the new standard for silicon PV wafers and will enable terawatt-scale PV – a prospect that may not be possible with sawn wafers. Our single, high-throughput step will replace the expensive and rate-limiting process steps of ingot casting and sawing, thereby enabling drastically lower wafer cost. This High-Impact PV Supply Chain project addressed the challenges of scaling Direct Wafer technology for cost-effective, high-throughput production of commercially viable 156 mm wafers. The Direct Wafer process is inherently simple and offers the potential for very low production cost, but to realize this, it is necessary to demonstrate production of wafers at high-throughput that meet customer specifications. At the start of the program, 1366 had demonstrated (with ARPA-E funding) increases in solar cell efficiency from 10% to 15.9% on small area (20cm2), scaling wafer size up to the industry standard 156mm, and demonstrated initial cell efficiency on larger wafers of 13.5%. During this program, the throughput of the Direct Wafer furnace was increased by more than 10X, simultaneous with quality improvements to meet early customer specifications. Dedicated equipment for laser trimming of wafers and measurement methods were developed to feedback key quality metrics to improve the process and equipment. Subsequent operations served both to determine key operating metrics affecting cost, as well as generating sample product that was used for developing downstream processing including texture and interaction with standard cell processing. Dramatic price drops for silicon wafers raised the bar significantly, but the

  17. Characterization of wafer-level bonded hermetic packages using optical leak detection

    Science.gov (United States)

    Duan, Ani; Wang, Kaiying; Aasmundtveit, Knut; Hoivik, Nils

    2009-07-01

    For MEMS devices required to be operated in a hermetic environment, one of the main reliability issues is related to the packaging methods applied. In this paper, an optical method for testing low volume hermetic cavities formed by anodic bonding between glass and SOI (silicon on insulator) wafer is presented. Several different cavity-geometry structures have been designed, fabricated and applied to monitor the hermeticity of wafer level anodic bonding. SOI wafer was used as the cap wafer on which the different-geometry structures were fabricated using standard MEMS technology. The test cavities were bonded using SOI wafers to glass wafers at 400C and 1000mbar pressure inside a vacuum bonding chamber. The bonding voltage varies from 200V to 600V. The bonding strength between glass and SOI wafer was mechanically tested using shear tester. The deformation amplitudes of the cavity cap surface were monitored by using an optical interferometer. The hermeticity of the glass-to-SOI wafer level bonding was characterized through observing the surface deformation in a 6 months period in atmospheric environment. We have observed a relatively stable micro vacuum-cavity.

  18. Cu-Sn transient liquid phase wafer bonding for MEMS applications

    NARCIS (Netherlands)

    Flötgen, C.; Pawlak, M.; Pabo, E.; Wiel, H.J. van de; Hayes, G.R.; Dragoi, V.

    2013-01-01

    The impact of process parameters on final bonding layer quality was investigated for Transient Liquid Phase (TLP) wafer-level bonding based on the Cu-Sn system. Subjects of this investigation were bonding temperature profile, bonding time and contact pressure as well as the choice of metal

  19. Wafer bonding technology for new generation vacuum MEMS: challenges and promises

    Science.gov (United States)

    Dragoi, V.; Pabo, E.

    2015-05-01

    Various MEMS devices are incorporated into consumer electronic devices. A particular category of MEMS require vacuum packaging by wafer bonding with the need to encapsulate vacuum levels of 10-2 mbar or higher with long time stability. The vacuum requirement is limiting the choice of the wafer bonding process and raises significant challenges to the existing investigation methods (metrology) used for results qualification. From the broad range of wafer bonding processes only few are compatible with vacuum applications: fusion bonding, anodic bonding, glass frit bonding and metal-based bonding. The outgassing from the enclosed surfaces after bonding will affect the vacuum level in the cavity: in some cases, a getter material is used inside the device cavity to compensate for this outgassing. Additionally the selected bonding process must be compatible with the devices on the wafers being bonded. This work reviews the principles of vacuum encapsulation using wafer bonding. Examples showing the suitability of each process for specific applications types will be presented. A significant challenge in vacuum MEMS fabrication is the lack of analytical methods needed for process characterization or reliability testing. A short overview of the most used methods and their limitations will be presented. Specific needs to be addressed will be introduced with examples.

  20. Investigation of Wafer Level Au-Si Eutectic Bonding of Shape Memory Alloy (SMA) with Silicon

    OpenAIRE

    Bushra, Sobia

    2011-01-01

    The objective of this research work was to investigate the low temperature gold silicon eutectic bonding of SMA with silicon wafers. The research work was carried out to optimize a bond process with better yield and higher bond strength. The gold layer thickness, processing temperature, diffusion barrier, adhesive layer, and the removal of silicon oxide are the important parameters in determining a reliable and uniform bond. Based on the previous work on Au-Si eutectic bonding, 7 different Si...

  1. Methods for characterization of wafer-level encapsulation applied on silicon to LTCC anodic bonding

    Science.gov (United States)

    Khan, M. F.; Ghavanini, F. A.; Haasl, S.; Löfgren, L.; Persson, K.; Rusu, C.; Schjølberg-Henriksen, K.; Enoksson, P.

    2010-06-01

    This paper presents initial results on generic characterization methods for wafer-level encapsulation. The methods, developed specifically to evaluate anodic bonding of low-temperature cofired ceramics (LTCC) to Si, are generally applicable to wafer-level encapsulation. Different microelectromechanical system (MEMS) structures positioned over the whole wafer provide local information about the bond quality. The structures include (i) resonating cantilevers as pressure sensors for bond hermeticity, (ii) resonating bridges as stress sensors for measuring the stress induced by the bonding and (iii) frames/mesas for pull tests. These MEMS structures have been designed, fabricated and characterized indicating that local information can easily be obtained. Buried electrodes to enable localized bonding have been implemented and their effectiveness is indicated from first results of the novel Si to LTCC anodic bonding.

  2. Analyses of crack growth along interface of patterned wafer-level Cu-Cu bonds

    DEFF Research Database (Denmark)

    Tvergaard, Viggo; Hutchinson, John W.

    2009-01-01

    A preliminary theoretical study is carried out of the role of micron-scale patterning on the interface toughness of bonded Cu-to-Cu nanometer-scale films. The work is motivated by the experimental studies of [Tadepalli, R., Turner. K.T., Thompson, C.V., 2008b. Effects of patterning on the interface...... toughness of wafer-level Cu-Cu bonds. Acta Materialia 56, 438-447; Tadepalli, R., Turner, K.T., Thompson, C.V., 2008c. Mixed-mode interface toughness of wafer-level Cu-Cu bonds using asymmetric chevron test. J. Mech. Phys. Solids 56, 707-718.] wherein 400 nm Cu films were deposited in a variety of patterns...... on Si wafer substrates. Specimens were then produced by bringing the Cu surfaces into contact creating thermo-compression bonds. Interface toughness of these specimens was experimentally measured. The present study focuses on interface patterns comprised of bonded strips, called lines, alternating...

  3. Vertical integration of array-type miniature interferometers at wafer level by using multistack anodic bonding

    Science.gov (United States)

    Wang, Wei-Shan; Wiemer, Maik; Froemel, Joerg; Enderlein, Tom; Gessner, Thomas; Lullin, Justine; Bargiel, Sylwester; Passilly, Nicolas; Albero, Jorge; Gorecki, Christophe

    2016-04-01

    In this work, vertical integration of miniaturized array-type Mirau interferometers at wafer level by using multi-stack anodic bonding is presented. Mirau interferometer is suitable for MEMS metrology and for medical imaging according to its vertical-, lateral- resolutions and working distances. Miniaturized Mirau interferometer can be a promising candidate as a key component of an optical coherence tomography (OCT) system. The miniaturized array-type interferometer consists of a microlens doublet, a Si-based MEMS Z scanner, a spacer for focus-adjustment and a beam splitter. Therefore, bonding technologies which are suitable for heterogeneous substrates are of high interest and necessary for the integration of MEMS/MOEMS devices. Multi-stack anodic bonding, which meets the optical and mechanical requirements of the MOEMS device, is adopted to integrate the array-type interferometers. First, the spacer and the beam splitter are bonded, followed by bonding of the MEMS Z scanner. In the meanwhile, two microlenses, which are composed of Si and glass wafers, are anodically bonded to form a microlens doublet. Then, the microlens doublet is aligned and bonded with the scanner/spacer/beam splitter stack. The bonded array-type interferometer is a 7- wafer stack and the thickness is approximately 5mm. To separate such a thick wafer stack with various substrates, 2-step laser cutting is used to dice the bonded stack into Mirau chips. To simplify fabrication process of each component, electrical connections are created at the last step by mounting a Mirau chip onto a flip chip PCB instead of through wafer vias. Stability of Au/Ti films on the MEMS Z scanner after anodic bonding, laser cutting and flip chip bonding are discussed as well.

  4. Eutectic and solid-state wafer bonding of silicon with gold

    Energy Technology Data Exchange (ETDEWEB)

    Abouie, Maryam; Liu, Qi [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, Canada T6G 2V4 (Canada); Ivey, Douglas G., E-mail: doug.ivey@ualberta.ca [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, Canada T6G 2V4 (Canada)

    2012-12-01

    Highlights: Black-Right-Pointing-Pointer Eutectic and solid-state Au-Si bonding are compared for both a-Si and c-Si samples. Black-Right-Pointing-Pointer Exchange of a-Si and Au layer was observed in both types of bonded samples. Black-Right-Pointing-Pointer Use of c-Si for bonding resulted in formation of craters at the Au/c-Si interface. Black-Right-Pointing-Pointer Solid-state Au-Si bonding produces better bonds in terms of microstructure. - Abstract: The simple Au-Si eutectic, which melts at 363 Degree-Sign C, can be used to bond Si wafers. However, faceted craters can form at the Au/Si interface as a result of anisotropic and non-uniform reaction between Au and crystalline silicon (c-Si). These craters may adversely affect active devices on the wafers. Two possible solutions to this problem were investigated in this study. One solution was to use an amorphous silicon layer (a-Si) that was deposited on the c-Si substrate to bond with the Au. The other solution was to use solid-state bonding instead of eutectic bonding, and the wafers were bonded at a temperature (350 Degree-Sign C) below the Au-Si eutectic temperature. The results showed that the a-Si layer prevented the formation of craters and solid-state bonding not only required a lower bonding temperature than eutectic bonding, but also prevented spill out of the solder resulting in strong bonds with high shear strength in comparison with eutectic bonding. Using amorphous silicon, the maximum shear strength for the solid-state Au-Si bond reached 15.2 MPa, whereas for the eutectic Au-Si bond it was 13.2 MPa.

  5. 3D micro-optical lens scanner made by multi-wafer bonding technology

    Science.gov (United States)

    Bargiel, S.; Gorecki, C.; Barański, M.; Passilly, N.; Wiemer, M.; Jia, C.; Frömel, J.

    2013-03-01

    We present the preliminary design, construction and technology of a microoptical, millimeter-size 3-D microlens scanner, which is a key-component for a number of optical on-chip microscopes with emphasis on the architecture of confocal microscope. The construction of the device relies on the vertical integration of micromachined building blocks: top glass lid, silicon electrostatic comb-drive X-Y and Z microactuators with integrated scanning microlenses, ceramic LTCC spacer, and bottom lid with focusing microlens. All components are connected on the wafer level only by sequential anodic bonding. The technology of through wafer vias is applied to create electrical connections through a stack of wafers. More generally, the presented bonding/connection technologies are also of a great importance for the development of various silicon-based devices based on vertical integration scheme. This approach offers a space-effective integration of complex MOEMS devices and an effective integration of various heterogeneous technologies.

  6. Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies

    Science.gov (United States)

    Lee, Tien-Hsi

    Wafer bonding is an attractive technology for modern semiconductor and microelectronic industry due to its variability in allowing combination of materials. Initially, the bonding of wafers of the same material, such as silicon-silicon wafer bonding has been major interest. In the meantime, research interest has shifted to the bonding of dissimilar materials such as silicon to quartz or to sapphire. Thermal stress coming from the different expansion coefficients usually is a barrier to the success of dissimilar material bonding. Thermal stress may cause debonding, sliding, cracking, thermal misfit dislocations, or film wrinkle to impair the quality of the transferred layer. This dissertation presents several effective approaches to solve the thermal stress problem. These approaches concern bonding processes (low vacuum bonding and storage), thinning (advanced ion implantation layer splitting), and annealing processes (accumulative effect of blister generation) and are combined to design the best heat-treatment cycle. For this propose the concept of hot bonding is used in order to effectively minimize the thermal mismatch of dissimilar material bonding during the bonding and thinning procedures. During the initial bonding and bond strengthening phase, the difference in the temperature between bonding and annealing processes should be decreased as much as possible to avoid excessive thermal stresses. This concept can be realized either by increasing the bonding temperature or by decreasing the annealing temperature. A thinning technique has to employed that can thin the device wafer before debonding occurs due to the thermal stress generated either from the cooling-down process in the first case or by the annealing process itself in the late case. The ion implantation layer splitting method, also known as the Smart-cutsp°ler process, developed by Bruel at LEIT in France is a practical thinning technique which satisfies the above requirement. In the study, an

  7. Nanofluidic chip for liquid TEM cell fabricated by parylene and silicon nitride direct bonding

    Science.gov (United States)

    Jang, Heejun; Kang, Il-Suk; Kim, Jihye; Kim, Jonghyun; Cha, Yun Jeong; Yoon, Dong Ki; Lee, Wonhee

    2017-09-01

    Despite the importance of nanofluidic transmission electron microscope (TEM) chips, a simple fabrication method has yet to be developed due to the difficulty of wafer bonding techniques using a nanoscale thick bonding layer. We present a simple and robust wafer scale bonding technique using parylene as a bonding layer. A nanoscale thick parylene layer was deposited on a silicon nitride (SiN) wafer and patterned to construct nanofluidic channels. The patterned parylene layer was directly bonded to another SiN wafer by thermal surface activation and bonding, with a bonding strength of ˜3 MPa. Fourier transform infrared spectroscopy showed that carbon-oxygen bonds were generated by thermal activation. We demonstrated TEM imaging of gold nanoparticles suspended in liquid using the fabricated nanofluidic chip.

  8. Oxide layer dissolution in Si/SiO{sub x}/Si wafer bonded structures

    Energy Technology Data Exchange (ETDEWEB)

    Pippel, E.; Werner, P.; Goesele, U. [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany); Vdovin, V. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Institute of Rare Metals Giredmet, Moscow (Russian Federation); Zakharov, N.

    2009-10-15

    The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are separated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si-Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Low temperature fusion wafer bonding quality investigation for failure mode analysis

    NARCIS (Netherlands)

    Dragoi, V.; Czurratis, P.; Brand, S.; Beyersdorfer, J.; Patzig, C.; Krugers, J.P.; Schrank, F.; Siegert, J.; Petzold, M.

    2012-01-01

    In this paper, a brief summary of potential defect formation and failure characteristics for low temperature plasma-assisted Si wafer bonding in correlation to different influencing factors is given. In terms of a failure catalogue classification, these defects are related to incoming material quali

  10. Low temperature sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Berenschot, J.W.; Elwenspoek, M.; Fluitman, J.H.J.

    1994-01-01

    A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique co

  11. Low temperature fusion wafer bonding quality investigation for failure mode analysis

    NARCIS (Netherlands)

    Dragoi, V.; Czurratis, P.; Brand, S.; Beyersdorfer, J.; Patzig, C.; Krugers, J.P.; Schrank, F.; Siegert, J.; Petzold, M.

    2012-01-01

    In this paper, a brief summary of potential defect formation and failure characteristics for low temperature plasma-assisted Si wafer bonding in correlation to different influencing factors is given. In terms of a failure catalogue classification, these defects are related to incoming material

  12. Low temperature fusion wafer bonding quality investigation for failure mode analysis

    NARCIS (Netherlands)

    Dragoi, V.; Czurratis, P.; Brand, S.; Beyersdorfer, J.; Patzig, C.; Krugers, J.P.; Schrank, F.; Siegert, J.; Petzold, M.

    2012-01-01

    In this paper, a brief summary of potential defect formation and failure characteristics for low temperature plasma-assisted Si wafer bonding in correlation to different influencing factors is given. In terms of a failure catalogue classification, these defects are related to incoming material quali

  13. Low temperature sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, V.L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    1994-01-01

    A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique

  14. Anodic Bonding of Transparent Conductive Oxide Coated Silicon Wafer to Glass Substrate for Solar Cell Applications

    Science.gov (United States)

    Yuda, Yohei; Koida, Takashi; Kaneko, Tetsuya; Kondo, Michio

    2013-01-01

    We report on the anodic bonding of Si wafer coated by thin transparent conductive oxide (TCO) with a glass substrate, for the first time. We obtained sufficient bonding strength of as high as 9.5 MPa using a 30-nm-thick indium tin oxide (ITO) layer. We have also found that the ITO sample shows much stronger bonding strength does a sample that with a zinc oxide layer. The bonding mechanism is discussed in terms of the permeation of indium elements into the glass side driven by electric field. Finally we demonstrated a solar cell using this substrate.

  15. Wafer bonding solution to epitaxial graphene-silicon integration

    Science.gov (United States)

    Dong, Rui; Guo, Zelei; Palmer, James; Hu, Yike; Ruan, Ming; Hankinson, John; Kunc, Jan; Bhattacharya, Swapan K.; Berger, Claire; de Heer, Walt A.

    2014-03-01

    A new strategy for the integration of graphene electronics with silicon complementary metal-oxide-semiconductor (Si-CMOS) technology is demonstrated that requires neither graphene transfer nor patterning. Inspired by silicon-on-insulator and three-dimensional device hyper-integration techniques, a thin monocrystalline silicon layer ready for CMOS processing is bonded to epitaxial graphene (EG) on SiC. The parallel Si and graphene electronic platforms are interconnected by metal vias. In this method, EG is grown prior to bonding so that the process is compatible with EG high temperature growth and preserves graphene integrity and nano-structuring.

  16. Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

    Directory of Open Access Journals (Sweden)

    Dongling Li

    2017-05-01

    Full Text Available Au/Si eutectic bonding is considered to BE a promising technology for creating 3D structures and hermetic packaging in micro-electro-mechanical system (MEMS devices. However, it suffers from the problems of a non-uniform bonding interface and complex processes for the interconnection of metal wires. This paper presents a novel Au/Si eutectic wafer bonding structure and an implementation method for MEMS accelerometer packaging. The related processing parameters influencing the Au/Si eutectic bonding quality were widely investigated. It was found that a high temperature of 400 °C with a low heating/cooling rate of 5 °C/min is crucial for successful Au/Si eutectic bonding. High contact force is beneficial for bonding uniformity, but the bonding strength and bonding yield decrease when the contact force increases from 3000 to 5000 N due to the metal squeezing out of the interface. The application of TiW as an adhesion layer on a glass substrate, compared with a commonly used Cr or Ti layer, significantly improves the bonding quality. The bonding strength is higher than 50 MPa, and the bonding yield is above 90% for the presented Au/Si eutectic bonding. Furthermore, the wafer-level vacuum packaging of the MEMS accelerometer was achieved based on Au/Si eutectic bonding and anodic bonding with one process. Testing results show a nonlinearity of 0.91% and a sensitivity of 1.06 V/g for the MEMS accelerometer. This Au/Si eutectic bonding process can be applied to the development of reliable, low-temperature, low-cost fabrication and hermetic packaging for MEMS devices.

  17. Damascene patterned metal/adhesive wafer bonding for three-dimensional integration

    Science.gov (United States)

    McMahon, J. Jay

    Wafer bonding of damascene patterned metal/adhesive surfaces is explored for a new three-dimensional (3D) integration technology platform. By bonding a pair of damascene patterned metal/adhesive layers, high density micron-sized vias can be formed for interconnection of fully fabricated integrated circuit (IC) dies at the wafer-level. Such via dimensions increase the areal interconnect density by at least two orders of magnitude over current package and die-stacking approaches to 3D integration. The adhesive field-dielectric produces a high critical adhesion energy bond and has the potential to produce void-free bonded interfaces. This new technology platform has been demonstrated by fabricating and characterizing inter-wafer via-chains on 200 mm diameter Si wafers. Copper and partially cured divinylsiloxane bis-benzocyclobutene (BCB) are selected as the metal and adhesive, respectively, and unit processes for this demonstration are described. Typical alignment tolerance is ˜2 mum, and baseline bonding conditions include vacuum of 5x10-4 mbar, bonding force of 10 kN, and two step bonding temperature of 250°C for 60 min followed by 350°C for 60 min. Integration issues associated with the damascene patterning and the wafer bonding processes are discussed, particularly the resulting topography of damascene patterned Cu/BCB. Cross-sectional investigation of bonded and annealed inter-wafer interconnections provides insight into the Cu-Cu and BCB-BCB bonding interfaces. Inter-wafer specific contact resistance is measured to be on the order of 10-7 O-cm 2 for these via-chains. Several material characterization techniques have been explored to evaluate partially cured BCB as an adhesive field-dielectric. To investigate the critical adhesion energy, Gc, four-point bending is utilized to compare surfaces bonded after chemical-mechanical planarization (CMP) and various post-CMP treatments. The Gc of bonded 50% partially cured BCB is measured to be in the range of 32--44 J

  18. The Evolution of Wafer Bonding Moving from the back-end further to the front-end

    Institute of Scientific and Technical Information of China (English)

    Thomas Glinsner; Peter Hangweier

    2009-01-01

    @@ 1 Introduction As the nanoscale era progresses, innovative new materials and processes continue to be developed and implemented as a means of keeping the industry on the path of Moore's Law. Wafer bonding - literally, the temporary or permanent joining of two wafers or substrates using a suitable combination of process technologies, chemicals and adhesives - is one such innovation.

  19. Direct bonded space maintainers.

    Science.gov (United States)

    Santos, V L; Almeida, M A; Mello, H S; Keith, O

    1993-01-01

    The aim of this study was to evaluate clinically a bonded space maintainer, which would reduce chair-side time and cost. Sixty appliances were fabricated from 0.7 mm stainless steel round wire and bonded using light-cured composite to the two teeth adjacent to the site of extraction of a posterior primary tooth. Twenty males and sixteen females (age range 5-9-years-old) were selected from the Pedodontic clinic of the State University of Rio de Janeiro. The sixty space maintainers were divided into two groups according to the site in which they were placed: a) absent first primary molar and b) absent second primary molar. Impressions and study models were obtained prior to and 6 months after bonding the appliances. During this period only 8.3% of failures were observed, most of them from occlusal or facial trauma. Student t-test did not show statistically significant alterations in the sizes of the maintained spaces during the trial period.

  20. Material size effects on crack growth along patterned wafer-level Cu–Cu bonds

    DEFF Research Database (Denmark)

    Tvergaard, Viggo; Niordson, Christian Frithiof; Hutchinson, John W.

    2013-01-01

    The role of micron-scale patterning on the interface toughness of bonded Cu-to-Cu nanometer-scale films is analyzed, motivated by experimental studies of Tadepalli, Turner and Thompson. In the experiments 400nm Cu films were deposited in various patterns on Si wafer substrates and then bonded...... together. Crack growth along the bond interface is here studied numerically using finite element analyses. The experiments have shown that plasticity in the Cu films makes a major contribution to the macroscopic interface toughness. To account for the size dependence of the plastic flow a strain gradient...... plasticity model is applied here for the metal. A cohesive zone model is applied to represent the crack growth along the bond between the two Cu films. This cohesive zone model incorporates the effect of higher order stresses in the continuum, such that the higher order tractions on the crack faces decay...

  1. Reducing thermal mismatch stress in anodically bonded silicon-glass wafers: theoretical estimation

    Science.gov (United States)

    Sinev, Leonid S.; Ryabov, Vladimir T.

    2017-01-01

    This paper reports the theoretical study and estimations of thermal mismatch stress reduction in anodically bonded silicon-glass stacks by justifiable selection of bonding temperature and glass thickness. This can be done only after prior thorough study of temperature dependence of the linear thermal expansion coefficient of the glass and silicon to be used. We show by analyzing such a dependence of several glass brands that the usual idea of decreasing the bonding process temperature as a solution to the thermal mismatch stress problem can be a failure. Interchanging glass brands during device design is shown to produce very contrasting changes in residual stresses. These results are in good agreement with finite-element modeling. This paper reports there is proportion between glass and silicon wafer thicknesses minimizing thermal mismatch stress at unbonded side of the silicon independently of the bonding or working temperatures chosen.

  2. Evolution of grain structures during directional solidification of silicon wafers

    Science.gov (United States)

    Lin, H. K.; Wu, M. C.; Chen, C. C.; Lan, C. W.

    2016-04-01

    The evolution of grain structures, especially the types of grain boundaries (GBs), during directional solidification is crucial to the electrical properties of multicrystalline silicon used for solar cells. To study this, the electric molten zone crystallization (EMZC) of silicon wafers at different drift speeds from 2 to 6 mm/min was considered. It was found that orientation was dominant at the lower drift velocity, while orientation at the higher drift velocity. Most of the non-∑GBs tended to align with the thermal gradient, but some tilted toward the unfavorable grains having higher interfacial energies. On the other hand, the tilted ∑3GBs tended to decrease during grain competition, except at the higher speed, where the twin nucleation became frequent. The competition of grains separated by ∑GBs could be viewed as the interactions of GBs that two coherent ∑3n GBs turned into one ∑3nGB following certain relations as reported before. On the other hand, when ∑ GBs met non-∑ GBs, the non-∑ GBs remained which explained the decrease of ∑ GBs at the lower speed.

  3. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    Science.gov (United States)

    Bronuzzi, J.; Mapelli, A.; Moll, M.; Sallese, J. M.

    2016-08-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set in full depletion. In a first step, Synopsys Sentaurus TCAD is used to evaluate the soundness of this technique for interface traps characterization such as it may happen in bonded interfaces. Next, an analytical model is developed in details to give a better insight into the physics behind the TCT for interface layers. Further, this can be used as a simple tool to evidence what are the relevant parameters influencing the TCT signal and to set the basis for preliminary characterizations.

  4. Evolution of the interface structure of bonded Si wafers after high temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, N D; Pippel, E; Werner, P; Goesele, U [Max Planck Institute of Microstructure Physics, 06120 Halle (Saale) (Germany); Vdovin, V [Institute for Chemical Problems of Microelectronics, 119017 Moscow (Russian Federation); Milvidskii, M [Institute of Rare Metals ' Giredmet' , 119017 Moscow (Russian Federation); Ries, M; Seacrist, M [MEMC Inc, 501 Pearl Drive, St Peters, MO, 63376 (United States); Falster, R [MEMC Electronic Materials SpA, Viale Gherzi 31, I-28100 Novara (Italy)

    2010-02-01

    The evolution of the interfaces of bonded Si wafers and the corresponding low-angle twist boundary have been analysed in dependence on thermal annealing. Two orientation relations were investigated: i) Si(001)/SiO{sub 2}/Si(001) and ii) Si(110)/SiO{sub 2}/Si(001). The interfaces were analysed by TEM and STEM/EDX and EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. A dissolution of the oxide and the formation of Si-Si boundaries occur much faster in the case of Si(110)/Si(001) bonding than in Si(001)/Si(001). The process of interface fusion and the dissolution of the oxide layer are discussed.

  5. Direct Bonded Pontic (Laporan Kasus

    Directory of Open Access Journals (Sweden)

    Suhandi Sidjaja

    2015-10-01

    Full Text Available Advanced science and technology in dentistry enable dental practitioners to modified she bonding techniques in tooth replacement. A pontic made of composite resin bonded to etched enamel of the adjacent teeth can be used in the replacement of one missing anterior tooth with a virgin or sowed adpicent tooth. The advantages of this technique include a one visit treatment, cow cost, good esthetics, less side effects and easy repair or rebounding. Clinical evaluation showed a high success rate therefore with a proper diagnosis and a perfect skill of the direct bonded technique this treatment can be used as an alternative restoration.

  6. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    CERN Document Server

    Bronuzzi, J.; Moll, M.; Sallese, J.M.

    2016-01-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set ...

  7. Why are Hydrogen Bonds Directional?

    Indian Academy of Sciences (India)

    ABHISHEK SHAHI; ELANGANNAN ARUNAN

    2016-10-01

    The recent IUPAC recommendation on the definition of hydrogen bonding points out that directionality is a defining characteristic of a hydrogen bond and the angle ∠X-H-Y is generally linear or 180◦. It also suggests that the X-H· · ·Y angle be greater than 110◦ for an interaction to be characterized as a hydrogenbond but does not provide any rationale for the same. This article reports a rationale for limiting the angle, based on the electron density topology using the quantum theory of atoms in molecules. Electron density topology for common hydrogen bond donors HF, HCl, HBr, HNC, HCN and HCCH are reported in this work. These calculations lead to an interesting observation that the atomic basins of H atom in all these donor molecules are limited justifying the restriction of hydrogen bond angle. Moreover, similar analysis on some hydrogen bonded complexes confirms that beyond this angle the acceptor atom Y starts interacting with the atomic basin on X. However, conclusions based on bond lengths and angles have to be treated with care and as the IUPAC recommendation points out that independent ‘evidence for bond formation’ in every case is important.

  8. Integrated optical MEMS using through-wafer vias and bump-bonding.

    Energy Technology Data Exchange (ETDEWEB)

    McCormick, Frederick Bossert; Frederick, Scott K.

    2008-01-01

    This LDRD began as a three year program to integrate through-wafer vias, micro-mirrors and control electronics with high-voltage capability to yield a 64 by 64 array of individually controllable micro-mirrors on 125 or 250 micron pitch with piston, tip and tilt movement. The effort was a mix of R&D and application. Care was taken to create SUMMiT{trademark} (Sandia's ultraplanar, multilevel MEMS technology) compatible via and mirror processes, and the ultimate goal was to mate this MEMS fabrication product to a complementary metal-oxide semiconductor (CMOS) electronics substrate. Significant progress was made on the via and mirror fabrication and design, the attach process development as well as the electronics high voltage (30 volt) and control designs. After approximately 22 months, the program was ready to proceed with fabrication and integration of the electronics, final mirror array, and through wafer vias to create a high resolution OMEMS array with individual mirror electronic control. At this point, however, mission alignment and budget constraints reduced the last year program funding and redirected the program to help support the through-silicon via work in the Hyper-Temporal Sensors (HTS) Grand Challenge (GC) LDRD. Several months of investigation and discussion with the HTS team resulted in a revised plan for the remaining 10 months of the program. We planned to build a capability in finer-pitched via fabrication on thinned substrates along with metallization schemes and bonding techniques for very large arrays of high density interconnects (up to 2000 x 2000 vias). Through this program, Sandia was able to build capability in several different conductive through wafer via processes using internal and external resources, MEMS mirror design and fabrication, various bonding techniques for arrayed substrates, and arrayed electronics control design with high voltage capability.

  9. Comprehensive investigation of sequential plasma activated Si/Si bonded interfaces for nano-integration on the wafer scale.

    Science.gov (United States)

    Kibria, M G; Zhang, F; Lee, T H; Kim, M J; Howlader, M M R

    2010-04-02

    The sequentially plasma activated bonding of silicon wafers has been investigated to facilitate the development of chemical free, room temperature and spontaneous bonding required for nanostructure integration on the wafer scale. The contact angle of the surface and the electrical and nanostructural behavior of the interface have been studied. The contact angle measurements show that the sequentially plasma (reactive ion etching plasma followed by microwave radicals) treated surfaces offer highly reactive and hydrophilic surfaces. These highly reactive surfaces allow spontaneous integration at the nanometer scale without any chemicals, external pressure or heating. Electrical characteristics show that the current transportation across the nanobonded interface is dependent on the plasma parameters. High resolution transmission electron microscopy results confirm nanometer scale bonding which is needed for the integration of nanostructures. The findings can be applied in spontaneous integration of nanostructures such as nanowires/nanotubes/quantum dots on the wafer scale.

  10. Investigation of Surface Pre-Treatment Methods for Wafer-Level Cu-Cu Thermo-Compression Bonding

    Directory of Open Access Journals (Sweden)

    Koki Tanaka

    2016-12-01

    Full Text Available To increase the yield of the wafer-level Cu-Cu thermo-compression bonding method, certain surface pre-treatment methods for Cu are studied which can be exposed to the atmosphere before bonding. To inhibit re-oxidation under atmospheric conditions, the reduced pure Cu surface is treated by H2/Ar plasma, NH3 plasma and thiol solution, respectively, and is covered by Cu hydride, Cu nitride and a self-assembled monolayer (SAM accordingly. A pair of the treated wafers is then bonded by the thermo-compression bonding method, and evaluated by the tensile test. Results show that the bond strengths of the wafers treated by NH3 plasma and SAM are not sufficient due to the remaining surface protection layers such as Cu nitride and SAMs resulting from the pre-treatment. In contrast, the H2/Ar plasma–treated wafer showed the same strength as the one with formic acid vapor treatment, even when exposed to the atmosphere for 30 min. In the thermal desorption spectroscopy (TDS measurement of the H2/Ar plasma–treated Cu sample, the total number of the detected H2 was 3.1 times more than the citric acid–treated one. Results of the TDS measurement indicate that the modified Cu surface is terminated by chemisorbed hydrogen atoms, which leads to high bonding strength.

  11. Anodic bonding using SOI wafer for fabrication of capacitive micromachined ultrasonic transducers

    Science.gov (United States)

    Bellaredj, M.; Bourbon, G.; Walter, V.; Le Moal, P.; Berthillier, M.

    2014-02-01

    In medical ultrasound imaging, mostly piezoelectric crystals are used as ultrasonic transducers. Capacitive micromachined ultrasonic transducers (CMUTs) introduced around 1994 have been shown to be a good alternative to conventional piezoelectric transducers in various aspects, such as sensitivity, transduction efficiency or bandwidth. This paper focuses on a fabrication process for CMUTs using anodic bonding of a silicon on insulator wafer on a glass wafer. The processing steps are described leading to a good control of the mechanical response of the membrane. This technology makes possible the fabrication of large membranes and can extend the frequency range of CMUTs to lower frequencies of operation. Silicon membranes having radii of 50, 70, 100 and 150 µm and a 1.5 µm thickness are fabricated and electromechanically characterized using an auto-balanced bridge impedance analyzer. Resonant frequencies from 0.6 to 2.3 MHz and an electromechanical coupling coefficient around 55% are reported. The effects of residual stress in the membranes and uncontrolled clamping conditions are clearly responsible for the discrepancies between experimental and theoretical values of the first resonance frequency. The residual stress in the membranes is determined to be between 90 and 110 MPa. The actual boundary conditions are between the clamped condition and the simply supported condition and can be modeled with a torsional stiffness of 2.10-7 Nm rad-1 in the numerical model.

  12. Geometrical Deviation and Residual Strain in Novel Silicon-on-Aluminium-Nitride Bonded Wafers

    Institute of Scientific and Technical Information of China (English)

    门传玲; 徐政; 吴雁军; 安正华; 谢欣云; 林成鲁

    2002-01-01

    Aluminium nitride (AlN), with much higher thermal conductivity, is considered to be an excellent alternative to the SiO2 layer in traditional silicon-on-insulator (SOI) materials. The silicon-on-aluminium-nitride (SOAN) structure was fabricated by the smart-cut process to alleviate the self-heating effects for traditional SOI. The convergent beam Kikuchi line diffraction pattern results show that some rotational misalignment exists when two wafers are bonded, which is about 3°. The high-resolution x-ray diffraction result indicates that, before annealing at high temperature, the residual lattice strain in the top silicon layer is tensile. After annealing at 1100° C for an hour, the strain in the top Si decreases greatly and reverses from tensile to slightly compressive as a result of viscous flow of AlN.

  13. High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor.

    Science.gov (United States)

    Wang, Liying; Du, Xiaohui; Wang, Lingyun; Xu, Zhanhao; Zhang, Chenying; Gu, Dandan

    2017-03-16

    In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS) stackable structure and integrated Ti getter. A double-layer structure similar to a silicon-on-insulator (SOI) wafer is formed after the resonant layer and the pressure-sensitive layer are bonded by silicon direct bonding (SDB). In order to form good bonding quality between the pressure-sensitive layer and the glass cap layer, the cross-layer anodic bonding technique is proposed for vacuum package by sputtering Aluminum (Al) on the combination wafer of the pressure-sensitive layer and the resonant layer to achieve electrical interconnection. The model and the bonding effect of this technique are discussed. In addition, in order to enhance the performance of titanium (Ti) getter, the prepared and activation parameters of Ti getter under different sputtering conditions are optimized and discussed. Based on the optimized results, the Ti getter (thickness of 300 nm to 500 nm) is also deposited on the inside of the glass groove by magnetron sputtering to maintain stable quality factor (Q). The Q test of the built testing system shows that the number of resonators with a Q value of more than 10,000 accounts for more than 73% of the total. With an interval of 1.5 years, the Q value of the samples remains almost constant. It proves the proposed cross-layer anodic bonding and getter technique can realize high-Q resonant structure for long-term stable operation.

  14. High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor

    Directory of Open Access Journals (Sweden)

    Liying Wang

    2017-03-01

    Full Text Available In order to achieve and maintain a high quality factor (high-Q for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS stackable structure and integrated Ti getter. A double-layer structure similar to a silicon-on-insulator (SOI wafer is formed after the resonant layer and the pressure-sensitive layer are bonded by silicon direct bonding (SDB. In order to form good bonding quality between the pressure-sensitive layer and the glass cap layer, the cross-layer anodic bonding technique is proposed for vacuum package by sputtering Aluminum (Al on the combination wafer of the pressure-sensitive layer and the resonant layer to achieve electrical interconnection. The model and the bonding effect of this technique are discussed. In addition, in order to enhance the performance of titanium (Ti getter, the prepared and activation parameters of Ti getter under different sputtering conditions are optimized and discussed. Based on the optimized results, the Ti getter (thickness of 300 nm to 500 nm is also deposited on the inside of the glass groove by magnetron sputtering to maintain stable quality factor (Q. The Q test of the built testing system shows that the number of resonators with a Q value of more than 10,000 accounts for more than 73% of the total. With an interval of 1.5 years, the Q value of the samples remains almost constant. It proves the proposed cross-layer anodic bonding and getter technique can realize high-Q resonant structure for long-term stable operation.

  15. Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(0 0 1) wafers processed and nanopackaged in a clean room environment

    Science.gov (United States)

    Kolmer, Marek; Godlewski, Szymon; Zuzak, Rafal; Wojtaszek, Mateusz; Rauer, Caroline; Thuaire, Aurélie; Hartmann, Jean-Michel; Moriceau, Hubert; Joachim, Christian; Szymonski, Marek

    2014-01-01

    Specific surfaces allowing the ultra-high vacuum (UHV) creation of electronic interconnects and atomic nanostructures are required for the successful development of novel nanoscale electronic devices. Atomically flat and reconstructed Si(0 0 1):H surfaces are serious candidates for that role. In this work such Si:H surfaces were prepared in a cleanroom environment on 200 mm silicon wafers with a hydrogen bake and were subsequently bonded together to ensure the surface protection, and allow their transportation and storage for several months in air. Given the nature of the bonding, which was hydrophobic with weak van der Waals forces, we were then able to de-bond them in UHV. We show that the quality of the de-bonded Si:H surface enables the "at will" construction of sophisticated and complex dangling bond (DB) nanostructures by atomically precise scanning tunneling microscope (STM) tip induced desorption of hydrogen atoms. The DB structures created on slightly doped Si:H samples were characterized by scanning tunneling microscopy and spectroscopy (STM/STS) performed at 4 K. Our results demonstrate that DB nanostructures fabricated on UHV de-bonded Si(0 0 1):H wafers could be directly incorporated in future electronics as interconnects and parts of nanoscale logic circuits.

  16. Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(0 0 1) wafers processed and nanopackaged in a clean room environment

    Energy Technology Data Exchange (ETDEWEB)

    Kolmer, Marek; Godlewski, Szymon; Zuzak, Rafal; Wojtaszek, Mateusz [Centre for Nanometer-Scale Science and Advanced Materials, NANOSAM, Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Reymonta Str. 4, PL 30-059 Krakow (Poland); Rauer, Caroline; Thuaire, Aurélie; Hartmann, Jean-Michel; Moriceau, Hubert [CEA, LETI, Minatec Campus, 17, Avenue des Martyrs, 38 054 Grenoble Cedex 9 (France); Joachim, Christian [Nanosciences Group and MANA Satellite, CEMES-CNRS, 29 rue Jeanne Marvig, F-31055 Toulouse (France); Szymonski, Marek, E-mail: marek.szymonski@uj.edu.pl [Centre for Nanometer-Scale Science and Advanced Materials, NANOSAM, Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Reymonta Str. 4, PL 30-059 Krakow (Poland)

    2014-01-01

    Specific surfaces allowing the ultra-high vacuum (UHV) creation of electronic interconnects and atomic nanostructures are required for the successful development of novel nanoscale electronic devices. Atomically flat and reconstructed Si(0 0 1):H surfaces are serious candidates for that role. In this work such Si:H surfaces were prepared in a cleanroom environment on 200 mm silicon wafers with a hydrogen bake and were subsequently bonded together to ensure the surface protection, and allow their transportation and storage for several months in air. Given the nature of the bonding, which was hydrophobic with weak van der Waals forces, we were then able to de-bond them in UHV. We show that the quality of the de-bonded Si:H surface enables the “at will” construction of sophisticated and complex dangling bond (DB) nanostructures by atomically precise scanning tunneling microscope (STM) tip induced desorption of hydrogen atoms. The DB structures created on slightly doped Si:H samples were characterized by scanning tunneling microscopy and spectroscopy (STM/STS) performed at 4 K. Our results demonstrate that DB nanostructures fabricated on UHV de-bonded Si(0 0 1):H wafers could be directly incorporated in future electronics as interconnects and parts of nanoscale logic circuits.

  17. Low-Cost, Manufacturable, 6-Inch Wafer Bonding Process for Next-Generation 5-Junction IMM+Ge Photovoltaic Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the development of a 6-inch wafer bonding process to allow bonding of a multi-junction inverted metamorphic (IMM) tandem solar cell structure to an...

  18. Wafer-level integration of NiTi shape memory alloy on silicon using Au-Si eutectic bonding

    OpenAIRE

    Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; van der Wijngaart, Wouter

    2012-01-01

    This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au-Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more ...

  19. Plate-like structure health monitoring based on ultrasonic guided wave technology by using bonded piezoelectric ceramic wafers

    Science.gov (United States)

    Liu, Zenghua; Zhao, Jichen; He, Cunfu; Wu, Bin

    2008-11-01

    Piezoelectric ceramic wafers are applied for the excitation and detection of ultrasonic guided waves to determine the health state of plate-like structures. Two PZT wafers, whose diameter is 11mm and thickness is 0.4mm respectively, are bonded permanently on the surface of a 1mm thick aluminum plate. One of these wafers is actuated by sinusoidal tone burst at various frequencies ranging from 100kHz to 500kHz, the other one is used as a receiver for acquiring ultrasonic guided wave signals. According to the amplitudes and shapes of these received signals, guided wave modes and their proper frequency range by using these wafers are determined. For the improvement of the signal-to-noise ratio, the Daubechies wavelet of order 40 is used for signal denoising as the mother wavelet. Furthermore, the detection of an artificial cylindrical through-hole defect is achieved by using S0 at 300kHz. Experimental results show that it is feasible and effective to detect defects in plate-like structures based on ultrasonic guided wave technology by using bonded piezoelectric ceramic wafers.

  20. Wafer-level packaging with compression-controlled seal ring bonding

    Science.gov (United States)

    Farino, Anthony J

    2013-11-05

    A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

  1. New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super-Chip Integration

    Science.gov (United States)

    Fukushima, Takafumi; Yamada, Yusuke; Kikuchi, Hirokazu; Koyanagi, Mitsumasa

    2006-04-01

    A new three-dimensional (3D) integration technology using the chip-to-wafer bonding technique provides the ultimate super-chip integration in which various kinds of chip of different sizes can be vertically stacked and electrically connected through a number of vertical interconnections. We have investigated several key technologies of vertical interconnection formation, chip alignment, chip-to-wafer bonding, adhesive injection, and chip thinning to vertically stack known good dies (KGDs) into 3D LSI chips. By using these key technologies, successful fabrication of 3D LSI test chips with vertical interconnections consisting of In-Au microbumps and buried interconnections filled with polycrystalline silicon (poly-Si) was demonstrated. The test chips was composed of three kinds of very thin chip of 5, 6, and 7 mm2 and ranging in thickness from 30 to 90 μm. Each chip is tightly bonded using a low-viscosity epoxy adhesive as a dielectric material.

  2. The fabrication of microfluidic structures by means of full-wafer adhesive bonding using a poly(dimethylsiloxane) catalyst

    Science.gov (United States)

    Samel, Björn; Kamruzzaman Chowdhury, M.; Stemme, Göran

    2007-08-01

    In this work, we present the use of a PDMS (poly(dimethylsiloxane)) curing-agent as the intermediate layer for adhesive full-wafer bonding suitable for fabrication of microfluidic structures. The curing-agent of the two-component silicone rubber (Sylgard 184) is spin coated on a substrate, brought into contact with another PDMS layer and heat cured to create an irreversible seal which is as strong as or even stronger than plasma-assisted PDMS bonding. The maximum bond strength is measured to 800 kPa when bonding together PDMS and silicon. The applicability of the new PDMS adhesive bonding method is verified by means of fabricating microfluidic structures. Using this method allows for wafer-level bonding of PDMS to various materials such as PDMS, glass or silicon and more importantly to selectively bond different layers by using a patterned adhesive bonding technique. Moreover, precise alignment of the structural layers is facilitated since curing is initiated upon heat which is an advantage when fabricating multilayer microfluidic devices.

  3. LAMMPS Framework for Directional Dynamic Bonding

    DEFF Research Database (Denmark)

    2012-01-01

    and bond types. When breaking bonds, all angular and dihedral interactions involving broken bonds are removed. The framework allows chemical reactions to be modeled, and use it to simulate a simplistic, coarse-grained DNA model. The resulting DNA dynamics illustrates the power of the present framework.......We have extended the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) to support directional bonds and dynamic bonding. The framework supports stochastic formation of new bonds, breakage of existing bonds, and conversion between bond types. Bond formation can be controlled...... to limit the maximal functionality of a bead with respect to various bond types. Concomitant with the bond dynamics, angular and dihedral interactions are dynamically introduced between newly connected triplets and quartets of beads, where the interaction type is determined from the local pattern of bead...

  4. Bond strength of direct and indirect bonded brackets after thermocycling.

    Science.gov (United States)

    Daub, Jacob; Berzins, David W; Linn, Brandon James; Bradley, Thomas Gerard

    2006-03-01

    Thermocycling simulates the temperature dynamics in the oral environment. With direct bonding, thermocycling reduces the bond strength of orthodontic adhesives to tooth structure. The purpose of this study was to evaluate the shear bond strengths (SBS) of one direct and two indirect bonding methods/adhesives after thermocycling. Sixty human premolars were divided into three groups. Teeth in group 1 were bonded directly with Transbond XT. Teeth in group 2 were indirect bonded with Transbond XT/Sondhi Rapid Set, which is chemically cured. Teeth in group 3 were indirect bonded with Enlight LV/Orthosolo and light cured. Each sample was thermocycled between 5 degrees C and 55 degrees C for 500 cycles. Mean SBS in groups 1, 2, and 3 were not statistically significantly different (13.6 +/- 2.9, 12.3 +/- 3.0, and 11.6 +/- 3.2 MPa, respectively; P > .05). However, when these values were compared with the results of a previous study using the same protocol, but without thermocycling, the SBS was reduced significantly (P = .001). Weibull analysis further showed that group 3 had the lowest bonding survival rate at the minimum clinically acceptable bond-strength range. The Adhesive Remnant Index was also determined, and group 2 had a significantly (P bond failures at the resin/enamel interface.

  5. Wafer-level hermetic thermo-compression bonding using electroplated gold sealing frame planarized by fly-cutting

    Science.gov (United States)

    Farisi, Muhammad Salman Al; Hirano, Hideki; Frömel, Jörg; Tanaka, Shuji

    2017-01-01

    In this paper, a novel wafer-level hermetic packaging technology for heterogeneous device integration is presented. Hermetic sealing is achieved by low-temperature thermo-compression bonding using electroplated Au micro-sealing frame planarized by single-point diamond fly-cutting. The proposed technology has significant advantages compared to other established processes in terms of integration of micro-structured wafer, vacuum encapsulation and electrical interconnection, which can be achieved at the same time. Furthermore, the technology is also achievable for a bonding frame width as narrow as 30 μm, giving it an advantage from a geometry perspective, and bonding temperatures as low as 300 °C, making it advantageous for temperature-sensitive devices. Outgassing in vacuum sealed cavities is studied and a cavity pressure below 500 Pa is achieved by introducing annealing steps prior to bonding. The pressure of the sealed cavity is measured by zero-balance method utilizing diaphragm-structured bonding test devices. The leak rate into the packages is determined by long-term sealed cavity pressure measurement for 1500 h to be less than 2.0× {{10}-14} Pa m3s-1. In addition, the bonding shear strength is also evaluated to be higher than 100 MPa.

  6. Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

    Science.gov (United States)

    Ke, Shaoying; Lin, Shaoming; Wei, Huang; Wang, Jianyuan; cheng, Buwen; Liang, Kun; Li, Cheng; Chen, Songyan

    2017-02-01

    The investigation of the single-photon properties of a wafer-bonded Ge/Si single-photon avalanche photodiode (SPAD) is theoretically conducted. We focus on the effect of the natural GeO2 layer (hydrophilic reaction) at the Ge/Si wafer-bonded interface on dark count characteristics and single-photon response. It is found that the wafer-bonded Ge/Si SPAD exhibits very low dark current at 250 K due to the absence of threading dislocation (TD) in the Ge layer. Owing to the increase of the unit-gain bias applied on the SPAD, the primary dark current (I DM) increases with the increase in GeO2 thickness. Furthermore, the dependence of the linear-mode gain and 3 dB bandwidth (BW) for the dark count on GeO2 thickness is also presented. It is observed that the dark count probability of the Ge/Si SPAD significantly increases with the increase in GeO2 thickness due to the increase of the I DM and the reduction of the 3 dB BW. It is also found that with the increase in GeO2 thickness, the external quantum efficiency, which affects the single-photon detection efficiency (SPDE), drastically decreases because of the blocking effect of the GeO2 layer and the serious recombination at the wafer-bonded Ge/Si interface. The afterpulsing probability (AP) shows an abnormal behavior with GeO2 thickness. This results from the decrease in avalanche charge and increase in effective transit time.

  7. Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology

    Science.gov (United States)

    Fournel, F.; Continni, L.; Morales, C.; Da Fonseca, J.; Moriceau, H.; Rieutord, F.; Barthelemy, A.; Radu, I.

    2012-05-01

    Bonding energy represents an important parameter for direct bonding applications as well as for the elaboration of physical mechanisms at bonding interfaces. Measurement of bonding energy using double cantilever beam (DCB) under prescribed displacement is the most used technique thanks to its simplicity. The measurements are typically done in standard atmosphere with relative humidity above 30%. Therefore, the obtained bonding energies are strongly impacted by the water stress corrosion at the bonding interfaces. This paper presents measurements of bonding energies of directly bonded silicon wafers under anhydrous nitrogen conditions in order to prevent the water stress corrosion effect. It is shown that the measurements under anhydrous nitrogen conditions (less than 0.2 ppm of water in nitrogen) lead to high stable debonding lengths under static load and to higher bonding energies compared to the values measured under standard ambient conditions. Moreover, the bonding energies of Si/SiO2 or SiO2/SiO2 bonding interfaces are measured overall the classical post bond annealing temperature range. These new results allow to revisit the reported bonding mechanisms and to highlight physical and chemical phenomena in the absence of stress corrosion effect.

  8. Direct transfer of wafer-scale graphene films

    Science.gov (United States)

    Kim, Maria; Shah, Ali; Li, Changfeng; Mustonen, Petri; Susoma, Jannatul; Manoocheri, Farshid; Riikonen, Juha; Lipsanen, Harri

    2017-09-01

    Flexible electronics serve as the ubiquitous platform for the next-generation life science, environmental monitoring, display, and energy conversion applications. Outstanding multi-functional mechanical, thermal, electrical, and chemical properties of graphene combined with transparency and flexibility solidifies it as ideal for these applications. Although chemical vapor deposition (CVD) enables cost-effective fabrication of high-quality large-area graphene films, one critical bottleneck is an efficient and reproducible transfer of graphene to flexible substrates. We explore and describe a direct transfer method of 6-inch monolayer CVD graphene onto transparent and flexible substrate based on direct vapor phase deposition of conformal parylene on as-grown graphene/copper (Cu) film. The method is straightforward, scalable, cost-effective and reproducible. The transferred film showed high uniformity, lack of mechanical defects and sheet resistance for doped graphene as low as 18 Ω/sq and 96.5% transparency at 550 nm while withstanding high strain. To underline that the introduced technique is capable of delivering graphene films for next-generation flexible applications we demonstrate a wearable capacitive controller, a heater, and a self-powered triboelectric sensor.

  9. Wafer level vacuum packaging of scanning micro-mirrors using glass-frit and anodic bonding methods

    Science.gov (United States)

    Langa, S.; Drabe, C.; Kunath, C.; Dreyhaupt, A.; Schenk, H.

    2013-03-01

    In this paper the authors report about the six inch wafer level vacuum packaging of electro-statically driven two dimensional micro-mirrors. The packaging was done by means of two types of wafer bonding methods: anodic and glass frit. The resulting chips after dicing are 4 mm wide, 6 mm long and 1.6 mm high and the residual pressure inside the package after dicing was estimated to be between 2 and 20 mbar. This allowed us to reduce the driving voltage of the micro-mirrors by more than 40% compared to the driving voltage without vacuum packaging. The vacuum stability after 5 months was verified by measurement using the so called "membrane method". Persistence of the vacuum was proven. No getter materials were used for packaging.

  10. An electrical test method for quality detecting of wafer level eutectic bonding

    Science.gov (United States)

    Zhang, Lemin; Jiao, Binbin; Ku, Will; Tseng, Li-Tien; Kong, Yanmei; Chien, Yu-Hao; Yun, Shichang; Chen, Dapeng

    2017-01-01

    As the costs of packaging and testing account for a substantial portion of microelectromechanical system (MEMS) devices, an effective and convenient characterization method is urgent to be investigated to lower the cost. In this paper, an electrical test method was utilized, and the test key used for a four-probe current-voltage test was designed to monitor the quality of the AuSn eutectic bonding. The electrical test can directly detect whether or not voids existed in the bonding layer. The difference in alloy state, for example, the existence of the (Au, Ni) 3Sn2 phase confirmed by the scanning electron microscope and energy dispersive x-ray spectroscopy test, can also be reflected by resistivity variation. The electrical test can be implemented automatically and conveniently unlike other characterization methods. Therefore, it is suitable to be applied in quality inspection in industrial production.

  11. Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface.

    Science.gov (United States)

    Hayeck, Nathalie; Ravier, Sylvain; Gemayel, Rachel; Gligorovski, Sasho; Poulet, Irène; Maalouly, Jacqueline; Wortham, Henri

    2015-11-01

    Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer. As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds. Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time-Time of Flight-Mass Spectrometry (DART-ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group.

  12. Wafer-level packaging and laser bonding as an approach for silicon-into-lab-on-chip integration

    Science.gov (United States)

    Brettschneider, T.; Dorrer, C.; Bründel, M.; Zengerle, R.; Daub, M.

    2013-05-01

    A novel approach for the integration of silicon biosensors into microfluidics is presented. Our approach is based on wafer-level packaging of the silicon die and a laser-bonding process of the resulting mold package into a polymer-multilayer stack. The introduction of a flexible and 40 μm thin hot melt foil as an intermediate layer enables laser bonding between materials with different melting temperatures, where standard laser welding processes cannot be employed. All process steps are suitable for mass production, e.g. the approach does not involve any dispensing steps for glue or underfiller. The integration approach was demonstrated and evaluated regarding process technology by wafer-level redistribution of daisy chain silicon dies representing a generic biosensor. Electrical connection was successfully established and laser-bonding tensile strength of 5.7 N mm-2 and burst pressure of 587 kPa at a temperature of 100 °C were achieved for the new material combination. The feasibility of the complete packaging approach was shown by the fabrication of a microfluidic flow cell with embedded mold package.

  13. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

    Science.gov (United States)

    Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan; Uchida, Shiro; Lu, Shu-long; Yang, Hui

    2016-12-01

    We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

  14. Direct bonding applied to space maintenance.

    Science.gov (United States)

    Swaine, T J; Wright, G Z

    1976-01-01

    Based on the conditions of this study, the following conclusions were reached: A success rate of 70 percent seems to justify further investigation into direct bonded space maintainers. A space maintainer directly bonded to the buccal surfaces seems to be efficient in maintaining single tooth spaces. Primary-to-primary appliances were more successful than the primary-to-permanent appliances, which suggests that incomplete first permanent molar eruption and a posterior location affect appliance durability.

  15. Effects of adhesive thickness on the Lamb wave pitch-catch signal using bonded piezoelectric wafer transducers

    Science.gov (United States)

    Islam, M. M.; Huang, H.

    2016-08-01

    This paper investigates the effects of adhesive layer on Lamb wave ultrasound pitch-catch signals that are excited and sensed by piezoelectric wafer transducers bonded on a slender structure. Analytical models were established to simulate the longitudinal and flexural vibrations of the structures separately and parametric studies of the bonding layer properties, i.e. the shear transfer parameter, adhesive thickness, and shear modulus, were performed. The parametric studies indicate that there exists an optimal adhesive layer thickness that generates maximum ultrasound pitch-catch signal for both wave modes. This prediction was subsequently validated by measurements. In addition, an improved match between the measured and simulated pitch-catch signals was achieved by adjusting the adhesive layer parameters.

  16. Direct to Digital Holography for Semiconductor Wafer Defect Detection and Review

    Energy Technology Data Exchange (ETDEWEB)

    ThomasJr., C. E. [nLine Corporation, Austin, TX; Bahm, Tracy M. [nLine Corporation, Austin, TX; Baylor, Larry R [ORNL; Bingham, Philip R. [nLine Corporation, Austin, TX; Burns, Steven W. [nLine Corporation, Austin, TX; Chidley, Matthew D [ORNL; Dai, Xiaolong [nLine Corporation, Austin, TX; Delahanty, Robert J. [nLine Corporation, Austin, TX; Doti, Christopher J. [nLine Corporation, Austin, TX; El-Khashab, Ayman [nLine Corporation, Austin, TX; Fisher, Robert L. [nLine Corporation, Austin, TX; Gilbert, Judd M. [nLine Corporation, Austin, TX; Cui, Hongtao [ORNL; Goddard Jr, James Samuel [ORNL; Hanson, Gregory R [ORNL; Hickson, Joel D. [nLine Corporation, Austin, TX; Hunt, Martin A. [nLine Corporation, Austin, TX; Hylton, Kathy W [ORNL; John, George C. [nLine Corporation, Austin, TX; Jones, Michael L. [nLine Corporation, Austin, TX; McDonald, Kenneth R. [nLine Corporation, Austin, TX; Mayo, Michael W. [nLine Corporation, Austin, TX; McMackin, Ian [nLine Corporation, Austin, TX; Patek, David [ORNL; Price, John H. [nLine Corporation, Austin, TX; Rasmussen, David A [ORNL; Schaefer, Louis J. [nLine Corporation, Austin, TX; Scheidt, Thomas R. [nLine Corporation, Austin, TX; Schulze, Mark A. [nLine Corporation, Austin, TX; Schumaker, Philip D. [nLine Corporation, Austin, TX; Shen, Bichuan [nLine Corporation, Austin, TX; Smith, Randall G. [nLine Corporation, Austin, TX; Su, Allen N. [nLine Corporation, Austin, TX; Tobin Jr, Kenneth William [ORNL; Usry, William R. [nLine Corporation, Austin, TX; Voelkl, Edgar [nLine Corporation, Austin, TX; Weber, Karsten S. [nLine Corporation, Austin, TX; Jones, Paul G. [nLine Corporation, Austin, TX; Owen, Robert W. [nLine Corporation, Austin, TX

    2002-01-01

    A method for recording true holograms (not holographic interferometry) directly to a digital video medium in a single image has been invented. This technology makes the amplitude and phase for every pixel of the target object wave available. Since phase is proportional to wavelength, this makes high-resolution metrology an implicit part of the holographic recording. Measurements of phase can be made to one hundredth or even one thousandth of a wavelength, so the technology is attractive for finding defects on semiconductor wafers, where feature sizes are now smaller than the wavelength of even deep ultra-violet light.

  17. On the directionality of halogen bonding.

    Science.gov (United States)

    Huber, Stefan M; Scanlon, Joseph D; Jimenez-Izal, Elisa; Ugalde, Jesus M; Infante, Ivan

    2013-07-07

    The origin of the high directionality of halogen bonding was investigated quantum chemically by a detailed comparison of typical adducts in two different orientations: linear (most stable) and perpendicular. Energy decomposition analyses revealed that the synergy between charge-transfer interactions and Pauli repulsion are the driving forces for the directionality, while electrostatic contributions are more favourable in the less-stable, perpendicular orientation.

  18. Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

    CERN Document Server

    Choi, W B; Lee Jae Sik; Sung, M Y

    2000-01-01

    The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/M sup 2 , which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

  19. Study on the pyroelectric properties of lithium niobate wafer prepared by wafer bonding and thinning%铌酸锂晶片的键合减薄及热释电性能研究

    Institute of Scientific and Technical Information of China (English)

    杨绪军; 陈箫; 刘岗; 牛坤旺; 张文栋

    2011-01-01

    铌酸锂(LN)作为一种热释电材料,可以被用于制作光电探测器敏感单元的敏感层,但通常LN晶片厚度为0.5 mm,远大于光电敏感单元厚度的要求,所以需要用键合减薄及抛光技术对LN晶片进行加工处理.本研究所用键合减薄技术主要包含:RZJ-304光刻胶键合、铣磨、抛光、剥离液剥离和丙酮清洗RZJ-304胶.利用该技术加工得到了面积为10 mm×10 mm,厚度为50 μm,表面比较光滑,表面粗糙度为1.63 nm的LN晶片.LN晶片的热释电信号峰峰值在减薄抛光后为176 mV,是未经处理时的4倍,满足了热释电探测器敏感层的要求.%Pyroelectric material lithium niobate (LN) can be used for the preparation of sensitive layer in the sensitive element of photoelectric detector. However, as the thickness of normal LN wafer, which is 0.5 mm, is much larger than the thickness of sensitive element, LN wafer need to be processed using the thinning and polishing techniques. A novel wafer bonding and thinning technique was introduced in this study, and it mainly included: wafer bonding with RZJ-304 photoresist, grinding, polishing, separating wafers with stripper and removing photoresist with acetone. LN wafer (10mm in square) with a thickness of 50 um is prepared using this technique, and the surface of prepared LN wafer is very smooth with the surface roughness being 1.63 nm. The peak value of the pyroelectric signal of the processed LN wafer is 176 mV, which is four times that of the unprocessed wafer, fulfilling the requirements of the sensitive layer of pyroelectric detector.

  20. Second-harmonic generation in periodically-poled thin film lithium niobate wafer-bonded on silicon

    Science.gov (United States)

    Rao, Ashutosh; Malinowski, Marcin; Honardoost, Amirmahdi; Talukder, Javed Rouf; Rabiei, Payam; Delfyett, Peter; Fathpour, Sasan

    2016-12-01

    Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 {\\mu}m2. The compactness of the waveguides results in efficient second-order nonlinear devices. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications.

  1. Second-harmonic generation in periodically-poled thin film lithium niobate wafer-bonded on silicon

    CERN Document Server

    Rao, Ashutosh; Honardoost, Amirmahdi; Talukder, Javed Rouf; Rabiei, Rayam; Delfyett, Peter; Fathpour, Sasan

    2016-01-01

    Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 {\\mu}m2. The compactness of the waveguides results in efficient second-order nonlinear devices. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications.

  2. Design and fabrication of high performance wafer-level vacuum packaging based on glass-silicon-glass bonding techniques

    Science.gov (United States)

    Zhang, Jinwen; Jiang, Wei; Wang, Xin; Zhou, Jilong; Yang, Huabing

    2012-12-01

    In this paper, a high performance wafer-level vacuum packaging technology based on GSG triple-layer sealing structure for encapsulating large mass inertial MEMS devices fabricated by silicon-on-glass bulk micromachining technology is presented. Roughness controlling strategy of bonding surfaces was proposed and described in detail. Silicon substrate was thinned and polished by CMP after the first bonding with the glass substrate and was then bonded with the glass micro-cap. Zr thin film was embedded into the concave of the micro-cap by a shadow-mask technique. The glass substrate was thinned to about 100 µm, wet etched through and metalized for realizing vertical feedthrough. During the fabrication, all patterning processes were operated carefully so as to reduce extrusive fragments to as little as possible. In addition, a high-performance micro-Pirani vacuum gauge was integrated into the package for monitoring the pressure and the leak rate further. The result shows that the pressure in the package is about 120 Pa and has no obvious change for more than one year indicating 10-13 stdcc s-1 leak rate.

  3. 热释电红外探测器PZT晶片粘接质量控制%Quality Control of the PZT Wafer Bonding in Pyroelectric Infrared Detector

    Institute of Scientific and Technical Information of China (English)

    黄江平; 冯江敏; 王羽; 苏玉辉; 信思树; 李玉英

    2013-01-01

    热释电红外探测器芯片研制中,晶片粘接是芯片研制中的关键工艺之一。本文详细论述了粘接胶的选择依据及晶片粘接质量控制。确定了适合器件研制的粘接胶和粘胶工艺流程。对粘接中出现的问题及解决办法进行了讨论。研制出了完全能满足器件工艺要求的热释电探测器PZT晶片。%The wafer bonding is one of the key technologies in pyroelectric infrared detector chip development. This paper discusses the selection basis of bonding glue and quality control of wafer bonding in details, also determines the adhesive glue and the technology suitable for detector development, and analyzes the problems and the resolution method in the course of wafer bonding. The PZT wafer that can fully meet the technology requirements of pyroelectric detector is provided.

  4. High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor

    National Research Council Canada - National Science Library

    Liying Wang; Xiaohui Du; Lingyun Wang; Zhanhao Xu; Chenying Zhang; Dandan Gu

    2017-01-01

    In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS...

  5. High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zihao; Preble, Stefan F. [Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States); Yao, Ruizhe; Lee, Chi-Sen; Guo, Wei, E-mail: wei-guo@uml.edu [Physics and Applied Physics Department, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States); Lester, Luke F. [Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)

    2015-12-28

    InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

  6. Nature of bonding forces between two hydrogen-passivated silicon wafers

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Nielsen, E.; Hult, E.;

    1998-01-01

    attraction between H overlayers, we find that the attraction is mainly due to long-range van der Waals interactions between the Si substrates, while the equilibrium separation is determined by short-range repulsion between occupied Si-H orbitals. Estimated bonding energies and Si-H frequency shifts...

  7. Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

    Science.gov (United States)

    Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

    2017-10-01

    The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing temperatures is also clearly clarified. It suggests that the bubble density is significantly affected by the crystallinity and thickness of the a-Ge layer. With the increase of the crystallinity and thickness of the a-Ge layer, the bubble density decreases. It is important that a near-bubble-free Ge interface, which is also an oxide-free interface, is achieved when the bonded Si wafers (a-Ge layer thickness  ⩾  20 nm) are annealed at 400 °C. Furthermore, the crystallization temperature of the a-Ge between the bonded Si wafers is lower than that on a Si substrate alone and the Ge grains firstly form at the Ge/Ge bonded interface, rather than the Ge/Si interface. We believe that the stress-induced crystallization of a-Ge film and the intermixing of Ge atoms at the Ge/Ge interface can be responsible for this feature.

  8. An X-ray diffraction study of direct-bonded silicon interfaces

    DEFF Research Database (Denmark)

    Howes, P.B.; Benamara, M.; Grey, F.

    1998-01-01

    Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(001) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals...

  9. Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

    Science.gov (United States)

    Lee, Y. J.; Lin, P. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

    2007-04-01

    An InGaN-based dual-wavelength blue/green (470nm/550nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40lm/W at 20mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

  10. Chemiluminescence system for direct determination and mapping of ultra-trace metal impurities on a silicon wafer.

    Science.gov (United States)

    Kim, Romertta; Sung, Y I; Lee, J S; Lim, H B

    2010-11-01

    A highly sensitive chemiluminescence (CL) system which consumed low sample and reagent volumes in the microlitre range was developed for direct determination and mapping of ultra-trace metal contaminants on solid surfaces, such as silicon wafers or flat display panels. The analytical result of the system was confirmed with ICP-MS. The system was composed of a scanner, sensor and a wafer moving stage. The scanner, with a scanning tip made of 0.03'' i.d. PTFE tubing, was used to collect metal impurities on the wafer surface with 5 μL of scanning solution. A coaxial sensing head of about 13 mm o.d. and 110 mm height was designed both to inject a luminescent reagent of luminol-H(2)O(2) mixture and to collect the luminescence light resulting from the reaction with metal ions of Co(2+), Fe(2+), Cu(2+), and Ni(2+). Due to the almost zero background, an extremely low limit of detection of 20.8 pg/mL for Co(2+) in 1% hydrofluoric acid (HF) was obtained from the calibration curve. In order to map the spatial distribution of the impurities, 11 cross sections of a Co-contaminated wafer were selected and scanned individually with a diluted HF solution. A contaminant level of 1.45-7.11 × 10(11) atoms cm(-2) was obtained for each section with an average of 4.21 × 10(11) atoms cm(-2), which was similar to the analytical result of 5.48 × 10(11) atoms cm(-2) obtained from vapor phase deposition-inductively coupled plasma-mass spectrometry (VPD-ICP-MS). Although this CL system does not have selectivity for each specific metal ion, its high sensitivity facilitates the monitoring and mapping of metal impurities of Co, Fe, Cu, etc. on the wafer directly and it can be used as an on-line inspection sensor for the first time in the semiconductor industry.

  11. Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Häussler, Dietrich [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Houben, Lothar [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Essig, Stephanie [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Kurttepeli, Mert [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Dimroth, Frank [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Dunin-Borkowski, Rafal E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Jäger, Wolfgang, E-mail: wolfgang.jaeger@tf.uni-kiel.de [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany)

    2013-11-15

    Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration-corrected high-angle annular dark-field STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy-dispersive X-ray spectroscopy (EDXS), and with high-resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer-bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the widths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. - Highlights: • Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si - multi-junction solar cells. • Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. • The projected widths of the interface layers are determined on the atomic scale from STEM-HAADF measurements. • The effects of atom and ion beam activation treatment on the bonding

  12. Preliminary reliability test of lateral-current-injection GaInAsP/InP membrane distributed feedback laser on Si substrate fabricated by adhesive wafer bonding

    Science.gov (United States)

    Fukuda, Kai; Inoue, Daisuke; Hiratani, Takuo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

    2017-02-01

    A preliminary reliability test was performed for lateral-current-injection GaInAsP/InP membrane Distributed Feedback (DFB) lasers fabricated by multi-regrowth and adhesive wafer bonding. The measurement was conducted for lasers with two different types of p-side electrode: Ti/Au and Au/Zn/Au. The device with the Au/Zn/Au electrode, which had better current-voltage (I-V) characteristics, showed no degradation of differential quantum efficiency and threshold current after continuous aging for 310 h at a bias current density of 5 kA/cm2. This result indicates that the multi-regrowth and bonding process for the GaInAsP/InP membrane DFB laser will not impact the initial reliability.

  13. High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

    CERN Document Server

    Wuu, D S; Huang, S H; Chung, C R

    2002-01-01

    Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

  14. A Method to Pattern Silver Nanowires Directly on Wafer-Scale PDMS Substrate and Its Applications.

    Science.gov (United States)

    Chou, Namsun; Kim, Youngseok; Kim, Sohee

    2016-03-01

    This study describes a fabrication method of microsized AgNW patterns based on poly dimethylsiloxane (PDMS) substrate using a poly(p-xylylene) (parylene) stencil technique. Various patterns of AgNW conductive sheets were created on the wafer scale area in the forms of straight and serpentine lines, texts, and symbols, which dimensions ranged from a few tens of micrometers to hundreds of micrometers. We demonstrated the electrical performance of straight line and serpentine line patterned AgNW electrodes when subjected to mechanical strains. The gauge factor and stretchability ranged from 0.5 to 55.2 at 2% uniaxial strain and from 4.7 to 55.7%, respectively, depending on the shapes and structures of the AgNW electrodes. Using the developed AgNW patterning technique, we fabricated strain sensors to detect small body signals epidermally such as hand motion, eye blink and heart rate. Also, tactile sensors were fabricated and exhibited the sensitivity of 3.91 MPa(-1) in the pressure range lower than 50 kPa, and 0.28 MPa(-1) in the pressure range greater than 50 kPa up to 1.3 MPa. From these results, we concluded that the proposed technique enables the fabrication of reliable AgNW patterns on wafer-scale PDMS substrate and the potential applications for various flexible electronic devices.

  15. Experiments on room temperature optical fiber-fiber direct bonding

    Science.gov (United States)

    Hao, Jinping; Yan, Ping; Xiao, Qirong; Wang, Yaping; Gong, Mali

    2012-08-01

    High quality permanent connection between optical fibers is a significant issue in optics and communication. Studies on room temperature optical large diameter fiber-fiber direct bonding, which is essentially surface interactions of glass material, are presented here. Bonded fiber pairs are obtained for the first time through the bonding technics illustrated here. Two different kinds of bonding technics are provided-fresh surface (freshly grinded and polished) bonding and hydrophobic surface (activated by H2SO4 and HF) bonding. By means of fresh surface bonding, a bonded fiber pair with light transmitting efficiency of 98.1% and bond strength of 21.2 N is obtained. Besides, in the bonding process, chemical surface treatment of fibers' end surfaces is an important step. Therefore, various ways of surface treatment are analyzed and compared, based on atomic force microscopy force curves of differently disposed surfaces. According to the comparison, fresh surfaces are suggested as the prior choice in room temperature optical fiber-fiber bonding, owing to their larger adhesive force, attractive force, attractive distance, and adhesive range.

  16. Study of hybrid orientation structure wafer*

    Institute of Scientific and Technical Information of China (English)

    Tan Kaizhou; Zhang Jing; Xu Shiliu; Zhang Zhengfan; Yang Yonghui; Chen Jun; Liang Tao

    2011-01-01

    Two types of 5 μm thick hybrid orientation structure wafers, which were integrated by (110) or (100) orientation silicon wafers as the substrate, have been investigated for 15-40 V voltage ICs and MEMS sensor applications. They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique, and have been presented in China for the first time. The thickness of BOX SiO2 buried in wafer is 220 nm. It has been found that the quality of hybrid orientation structure with (100) wafer substrate is better than that with (110) wafer substrate by “Sirtl defect etching of HOSW”.

  17. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, H. A.

    2008-11-01

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  18. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeonghee, E-mail: jhkim@ece.ucsb.edu; Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-01-12

    This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V{sub GS} = 0 V and L{sub go} = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials.

  19. Wafer characteristics via reflectometry

    Science.gov (United States)

    Sopori, Bhushan L.

    2010-10-19

    Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

  20. Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

    Science.gov (United States)

    Hanaoka, M.; Kaneda, H.; Oyabu, S.; Yamagishi, M.; Hattori, Y.; Ukai, S.; Shichi, K.; Wada, T.; Suzuki, T.; Watanabe, K.; Nagase, K.; Baba, S.; Kochi, C.

    2016-07-01

    We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 \\upmu m. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ˜ 200 \\upmu m with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.

  1. Thioamides: versatile bonds to induce directional and cooperative hydrogen bonding in supramolecular polymers.

    Science.gov (United States)

    Mes, Tristan; Cantekin, Seda; Balkenende, Dirk W R; Frissen, Martijn M M; Gillissen, Martijn A J; De Waal, Bas F M; Voets, Ilja K; Meijer, E W; Palmans, Anja R A

    2013-06-24

    The amide bond is a versatile functional group and its directional hydrogen-bonding capabilities are widely applied in, for example, supramolecular chemistry. The potential of the thioamide bond, in contrast, is virtually unexplored as a structuring moiety in hydrogen-bonding-based self-assembling systems. We report herein the synthesis and characterisation of a new self-assembling motif comprising thioamides to induce directional hydrogen bonding. N,N',N''-Trialkylbenzene-1,3,5-tris(carbothioamide)s (thioBTAs) with either achiral or chiral side-chains have been readily obtained by treating their amide-based precursors with P2S5. The thioBTAs showed thermotropic liquid crystalline behaviour and a columnar mesophase was assigned. IR spectroscopy revealed that strong, three-fold, intermolecular hydrogen-bonding interactions stabilise the columnar structures. In apolar alkane solutions, thioBTAs self-assemble into one-dimensional, helical supramolecular polymers stabilised by three-fold hydrogen bonding. Concentration- and temperature-dependent self-assembly studies performed by using a combination of UV and CD spectroscopy demonstrated a cooperative supramolecular polymerisation mechanism and a strong amplification of supramolecular chirality. The high dipole moment of the thioamide bond in combination with the anisotropic shape of the resulting cylindrical aggregate gives rise to sufficiently strong depolarised light scattering to enable depolarised dynamic light scattering (DDLS) experiments in dilute alkane solution. The rotational and translational diffusion coefficients, D(trans) and D(rot), were obtained from the DDLS measurements, and the average length, L, and diameter, d, of the thioBTA aggregates were derived (L = 490 nm and d = 3.6 nm). These measured values are in good agreement with the value L(w) = 755 nm obtained from fitting the temperature-dependent CD data by using a recently developed equilibrium model. This experimental verification

  2. A posttreatment evaluation of direct bonding in orthodontics.

    Science.gov (United States)

    Zachrisson, B J

    1977-02-01

    A long-term evaluation was made of results achieved in direct bonding of metal attachments with a chemically polymerized composite material. A total of 705 attachments were bonded to different teeth, including premolars and molars, in forty-six children. Slim bracket bases, small quantities of adhesive paste, and trimming of the excess material were used to improve esthetics and to benefit in respect of gingival condition. The same person bonded all brackets and performed the orthodontic treatment by a friction-free edgewise light-wire technique. Mean treatment time was 17 months. The clinical appearance before, during, and after treatment is shown in Figs. 3 to 5. The failure rates for the whole treatment period were 4 to 10 per cent for central and lateral incisors, canines, and first premolars in both dental arches. The second premolars, which were often in various stages of eruption at the time of bonding, and the molars had higher failure rates (Table I). An evident individual variation was noted, as a few children had a high number of loose brackets. Clinical and scanning electron microscopic studies of tooth surfaces following removal of the brackets demonstrated normal surface appearance when plain-cut tungsten carbide burs rotated at low speed were used to remove remnants of adhesive that could not easily be scraped off. Precoating etched enamel with sealant, in combination with daily fluoride mouth rinses and good oral hygiene, virtually eliminated the caries problem, but regular inspection for interproximal cavities was needed. There were no signs of enamel damage or discoloration for periods of up to 12 months subsequent to bracket removal. Further details of the technical operative procedure, failure analysis, bracket type and design, gingival health, and other aspects of direct bonding were also discussed.

  3. Void-Free Direct Bonding of CMUT Arrays with Single Crystalline Plates and Pull- In Insulation

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Dahl Johnsen, Mathias

    2013-01-01

    anisotropically plasma etched cavities after the second oxidation. It is demonstrated that the protrusions will prevent good wafer bonding without subsequent polishing or etching steps. A new fabrication process is therefore proposed, allowing protrusionfree bonding surfaces with no alteration of the final......, and a proposed analytical model, which is in good agreement with the simulated results. The results demonstrate protrusion heights in the order of 10 nm to 40 nm, with higher oxidation temperatures giving the highest protrusions. Isotropically wet etched cavities exhibit significantly smaller protrusions than...

  4. Amide-directed photoredox-catalysed C-C bond formation at unactivated sp3 C-H bonds

    Science.gov (United States)

    Chu, John C. K.; Rovis, Tomislav

    2016-11-01

    Carbon-carbon (C-C) bond formation is paramount in the synthesis of biologically relevant molecules, modern synthetic materials and commodity chemicals such as fuels and lubricants. Traditionally, the presence of a functional group is required at the site of C-C bond formation. Strategies that allow C-C bond formation at inert carbon-hydrogen (C-H) bonds enable access to molecules that would otherwise be inaccessible and the development of more efficient syntheses of complex molecules. Here we report a method for the formation of C-C bonds by directed cleavage of traditionally non-reactive C-H bonds and their subsequent coupling with readily available alkenes. Our methodology allows for amide-directed selective C-C bond formation at unactivated sp3 C-H bonds in molecules that contain many such bonds that are seemingly indistinguishable. Selectivity arises through a relayed photoredox-catalysed oxidation of a nitrogen-hydrogen bond. We anticipate that our findings will serve as a starting point for functionalization at inert C-H bonds through a strategy involving hydrogen-atom transfer.

  5. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

    Science.gov (United States)

    Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2010-05-10

    An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).

  6. Direct bonding for dissimilar metals assisted by carboxylic acid vapor

    Science.gov (United States)

    Song, Jenn-Ming; Huang, Shang-Kun; Akaike, Masatake; Suga, Tadatomo

    2015-03-01

    This study developed a low-temperature low-vacuum direct bonding process for dissimilar metals via surface modification with formic acid vapor. Robust Cu/Ag and Cu/Zn bonding with a shear strength higher than 25 MPa can be achieved by thermal compression at 275 and 300 °C, respectively. CuZn5 and Cu5Zn8 formed at the interface of Cu/Zn joints, while no distinct interdiffusion layers appeared at the Cu/Ag interface. At elevated temperatures, the shear strength of Cu/Zn joints decreased significantly and turned to be weaker than Cu/Ag at 250 °C due to the softening of Zn. All the joints performed well subjected to thermal cycling up to 1000 times. However, compared with Cu/Ag joints with stable mechanical performance suffering aging at 250 °C, the shear strength of Cu/Zn degraded drastically up to 200 h, and after that it remained almost constant, which can be ascribed to the competitive growth between CuZn5 and Cu5Zn8, resulting in collapse and oxidation of CuZn5.

  7. Effect of Curing Direction on Microtensile Bond Strength of Fifth and Sixth Generation Dental Adhesives

    Directory of Open Access Journals (Sweden)

    Ali Nadaf

    2012-09-01

    Full Text Available Background and Aims: Composite restorative materials and dental adhesives are usually cured with light sources. The light direction may influence the bond strength of dental adhesives. The aim of this study was to evaluate the effect of light direction on the microtensile bond strength of fifth and sixth generation dental adhesives.Materials and Methods: Prime & Bond NT and Clearfil SE bond were used with different light directions.Sixty human incisor teeth were divided into 4 groups (n=15. In groups A and C, Clearfil SE bond with light curing direction from buccal was used for bonding a composite resin to dentin. In groups B and D, Prime & Bond NT with light curing direction from composite was used. After thermocycling the specimens were subjected to tensile force until debonding occurred and values for microtensile bond strength were recorded. The data were analyzed using two-way ANOVA and Tukey post hoc test.Results: The findings showed that the bond strength of Clearfil SE bond was significantly higher than that of Prime&Bond NT (P<0.001. There was no significant difference between light curing directions (P=0.132.Conclusion: Light curing direction did not have significant effect on the bond strength. Sixth generation adhesives was more successful than fifth generation in terms of bond strength to dentin.

  8. Enhanced Cu-to-Cu direct bonding by controlling surface physical properties

    Science.gov (United States)

    Chiang, Po-Hao; Liang, Sin-Yong; Song, Jenn-Ming; Huang, Shang-Kun; Chiu, Ying-Ta; Hung, Chih-Pin

    2017-03-01

    Cu-to-Cu direct bonding is one of the key technologies for three-dimensional (3D) chip stacking. This research proposes a new concept to enhance Cu-to-Cu direct bonding through the control of surface physical properties. A linear relationship between bonding strength and the H/\\sqrt{R} value of the bonding face (H: subsurface hardness, R: surface roughness) was found. Low vacuum air plasma and thermal annealing were adopted to adjust the surface physical conditions. Instead of surface activation, an acceleration in copper atom diffusion due to plasma-induced compressive stress accounts for the improvement in bonding strength.

  9. Three wafer stacking for 3D integration.

    Energy Technology Data Exchange (ETDEWEB)

    Greth, K. Douglas; Ford, Christine L.; Lantz, Jeffrey W.; Shinde, Subhash L.; Timon, Robert P.; Bauer, Todd M.; Hetherington, Dale Laird; Sanchez, Carlos Anthony

    2011-11-01

    Vertical wafer stacking will enable a wide variety of new system architectures by enabling the integration of dissimilar technologies in one small form factor package. With this LDRD, we explored the combination of processes and integration techniques required to achieve stacking of three or more layers. The specific topics that we investigated include design and layout of a reticle set for use as a process development vehicle, through silicon via formation, bonding media, wafer thinning, dielectric deposition for via isolation on the wafer backside, and pad formation.

  10. Three wafer stacking for 3D integration.

    Energy Technology Data Exchange (ETDEWEB)

    Greth, K. Douglas; Ford, Christine L.; Lantz, Jeffrey W.; Shinde, Subhash L.; Timon, Robert P.; Bauer, Todd M.; Hetherington, Dale Laird; Sanchez, Carlos Anthony

    2011-11-01

    Vertical wafer stacking will enable a wide variety of new system architectures by enabling the integration of dissimilar technologies in one small form factor package. With this LDRD, we explored the combination of processes and integration techniques required to achieve stacking of three or more layers. The specific topics that we investigated include design and layout of a reticle set for use as a process development vehicle, through silicon via formation, bonding media, wafer thinning, dielectric deposition for via isolation on the wafer backside, and pad formation.

  11. Novel Position-Space Renormalization Group for Bond Directed Percolation in Two Dimensions

    OpenAIRE

    KAYA, H.; Erzan, A.

    1998-01-01

    A new position-space renormalization group approach is investigated for bond directed percolation in two dimensions. The threshold value for the bond occupation probabilities is found to be $p_c=0.6443$. Correlation length exponents on time (parallel) and space (transverse) directions are found to be $\

  12. Rhodium-Catalyzed C-C Bond Formation via Heteroatom-Directed C-H Bond Activation

    Energy Technology Data Exchange (ETDEWEB)

    Colby, Denise; Bergman, Robert; Ellman, Jonathan

    2010-05-13

    Once considered the 'holy grail' of organometallic chemistry, synthetically useful reactions employing C-H bond activation have increasingly been developed and applied to natural product and drug synthesis over the past decade. The ubiquity and relative low cost of hydrocarbons makes C-H bond functionalization an attractive alternative to classical C-C bond forming reactions such as cross-coupling, which require organohalides and organometallic reagents. In addition to providing an atom economical alternative to standard cross - coupling strategies, C-H bond functionalization also reduces the production of toxic by-products, thereby contributing to the growing field of reactions with decreased environmental impact. In the area of C-C bond forming reactions that proceed via a C-H activation mechanism, rhodium catalysts stand out for their functional group tolerance and wide range of synthetic utility. Over the course of the last decade, many Rh-catalyzed methods for heteroatom-directed C-H bond functionalization have been reported and will be the focus of this review. Material appearing in the literature prior to 2001 has been reviewed previously and will only be introduced as background when necessary. The synthesis of complex molecules from relatively simple precursors has long been a goal for many organic chemists. The ability to selectively functionalize a molecule with minimal pre-activation can streamline syntheses and expand the opportunities to explore the utility of complex molecules in areas ranging from the pharmaceutical industry to materials science. Indeed, the issue of selectivity is paramount in the development of all C-H bond functionalization methods. Several groups have developed elegant approaches towards achieving selectivity in molecules that possess many sterically and electronically similar C-H bonds. Many of these approaches are discussed in detail in the accompanying articles in this special issue of Chemical Reviews. One approach

  13. Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

    Science.gov (United States)

    Mavoori, Hareesh; Ramirez, Ainissa G.; Jin, Sungho

    2001-05-01

    The surfaces of electronic and optical materials such as nitrides, carbides, oxides, sulfides, fluorides, selenides, diamond, silicon, and GaAs are known to be very difficult to bond with low melting point solders (<300 °C). We have achieved a direct and powerful bonding on these surfaces by using low temperature solders doped with rare-earth elements. The rare earth is stored in micron-scale, finely-dispersed intermetallic islands (Sn3Lu or Au4Lu), and when released, causes chemical reactions at the interface producing strong bonds. These solders directly bond to semiconductor surfaces and provide ohmic contacts. They can be useful for providing direct electrical contacts and interconnects in a variety of electronic assemblies, dimensionally stable and reliable bonding in optical fiber, laser, or thermal management assemblies.

  14. Influence of the direction of tubules on bond strength to dentin.

    Science.gov (United States)

    Ogata, M; Okuda, M; Nakajima, M; Pereira, P N; Sano, H; Tagami, J

    2001-01-01

    This study investigated the influence of the direction of dentinal tubules on resin-dentin tensile bond strength (mu TBS) using four commercially available bonding systems and observed the resin-dentin interfaces with an SEM. The dentin bonding systems used in this study were Clearfil Liner Bond II (LB, Kuraray), Imperva Fluoro Bond (FB, Shofu), Single Bond (SB, 3M) and One-Step (OS, BISCO). Thirty-six extracted caries-free human molars were used for micro tensile bond testing and eight additional teeth were used for scanning electron microscopy (SEM). The teeth were divided into two groups according to the direction of the dentinal tubules at the resin-dentin interface: a perpendicular group, in which the occlusal enamel was removed perpendicular to the long axis of the tooth, and a parallel group, in which the mesial half of the tooth was removed parallel to the long axis of the tooth, and the coronal dentin surface was used for bonding. After the flat dentin surfaces were polished with #600 silicon carbide paper, each surface was treated with one of the four adhesive systems according to the manufacturer's recommendation, then covered with resin composite (Clearfil AP-X, Kuraray) to provide sufficient bulk for micro-tensile bond testing. After 24 hours in 37 degrees C water, the resin-bonded teeth were serially sliced perpendicular to the adhesive surface, the adhesive interface trimmed to a cross sectional area of 1 mm2 and subjected to tensile forces at a crosshead speed of 1 mm/min. Statistical analysis of the tensile bond strengths were performed using two-way ANOVA and Fisher's PLSD test at 95% level of confidence. The tensile bond strength of the group with tubules parallel to the bonded interface was higher than that of tubules cut perpendicularly. This tendency reached statistical significance using SB and OS.

  15. Template-Directed meta-Selective Olefination of Aryl C–H Bonds

    OpenAIRE

    2015-01-01

    Authors: Jinquan Yu ### Abstract The most common bond in many organic compounds is the C–H bond. Hence, it is a great challenge to selectively cleave a particular C–H bond in the presence of multiple ones. One of most widely used approach to this problem is the use of -chelating directing groups (1). However, the insertion of the transition metal is strictly restricted to the ortho-C–H bond through a six- or seven-membered cyclic pre-transition state (TS). Although many strategies ha...

  16. Electrochemical detection of uric acid using ruthenium-dioxide-coated carbon nanotube directly grown onto Si wafer

    Science.gov (United States)

    Shih, Yi-Ting; Lee, Kuei-Yi; Lin, Chung-Kuang

    2015-12-01

    Carbon nanotubes (CNTs) directly grown onto a Si substrate by thermal chemical vapor deposition were used in uric acid (UA) detection. The process is simple and formation is easy without the need for additional chemical treatments. However, CNTs lack selectivity and sensitivity to UA. To enhance the electrochemical analysis, ruthenium oxide was used as a catalytic mediator in the modification of electrodes. The electrochemical results show that RuO2 nanostructures coated onto CNTs can strengthen the UA signal. The peak currents of RuO2 nanostructures coated onto CNTs linearly increase with increasing UA concentration, meaning that they can work as electrodes for UA detection. The lowest detection limit and highest sensitivity were 55 nM and 4.36 µA/µM, respectively. Moreover, the characteristics of RuO2 nanostructures coated onto CNTs were examined by scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy.

  17. Surface-phosphorylated copolymer promotes direct bone bonding.

    Science.gov (United States)

    Gopalakrishnanchettiyar, Sailaja S; Mohanty, Mira; Kumary, Thrikkovil V; Valappil, Mohanan P; Parameshwaran, Ramesh; Varma, Harikrishna K

    2009-10-01

    The bone bonding potential of surface-phosphorylated poly (2-hydroxyethyl methacrylate-co-methyl methacrylate) [poly (HEMA-co-MMA)] has been investigated and compared with commercially available poly (methyl methacrylate) bone cement (CMW1 radiopaque, Depuy; Johnson & Johnson, Blackpool, Lancashire, England, United Kingdom) as control. Poly (HEMA-co-MMA) is synthesized by free radical-initiated copolymerization and surface functionalized by phosphorylation. The X-ray photoelectron spectroscopy confirms the presence of surface-bound phosphate groups on poly (HEMA-co-MMA). The surface-phosphorylated poly (HEMA-co-MMA) promotes in vitro biomineralization, cell viability, cell adhesion, and expression of bone-specific markers such as osteocalcin and alkaline phosphatase. The bone implantation study performed in rabbits as per ISO 10993-6; 1994 (E) shows that surface-phosphorylated poly (HEMA-co-MMA) elicits bone bonding and new bone formation. New woven bone trabeculae are formed at the defect site of surface-phosphorylated poly (HEMA-co-MMA) within 1 week, while for control sample, inflammatory cells--predominantly, macrophages, fibroblasts, and fibrocytes--are present at the cortical margins around the defect. The 4 and 12 weeks postimplantation results show that the major part of the defects around the surface-phosphorylated poly (HEMA-co-MMA) implant is bridged with new woven bone, with significant remodeling (evident from resorption bays) along both the margins of the defect, but for control implants, the defects are only partially closed, with slight remodeling along the margins, but most of them are separated by fibrous tissue.

  18. Optical characterization of gaps in directly bonded Si compound optics using infrared spectroscopy

    CERN Document Server

    Gully-Santiago, Michael; White, Victor

    2015-01-01

    Silicon direct bonding offers flexibility in the design and development of Si optics by allowing manufacturers to combine subcomponents with a potentially lossless and mechanically stable interface. The bonding process presents challenges in meeting the requirements for optical performance because air gaps at the Si interface cause large Fresnel reflections. Even small (35 nm) gaps reduce transmission through a direct bonded Si compound optic by 4% at $\\lambda = 1.25 \\; \\mu$m at normal incidence. We describe a bond inspection method that makes use of precision slit spectroscopy to detect and measure gaps as small as 14 nm. Our method compares low finesse Fabry-P\\'{e}rot models to high precision measurements of transmission as a function of wavelength. We demonstrate the validity of the approach by measuring bond gaps of known depths produced by microlithography.

  19. Novel position-space renormalization group for bond directed percolation in two dimensions

    Science.gov (United States)

    Kaya, Hüseyin; Erzan, Ayşe

    A new position-space renormalization group approach is investigated for bond directed percolation in two dimensions. The threshold value for the bond occupation probabilities is found to be pc=0.6443. Correlation length exponents on time (parallel) and space (transverse) directions are found to be ν∥=1.719 and ν⊥=1.076, respectively, which are in very good agreement with the best-known series expansion results.

  20. Reduction reaction analysis of nanoparticle copper oxide for copper direct bonding using formic acid

    Science.gov (United States)

    Fujino, Masahisa; Akaike, Masatake; Matsuoka, Naoya; Suga, Tadatomo

    2017-04-01

    Copper direct bonding is required for electronics devices, especially power devices, and copper direct bonding using formic acid is expected to lower the bonding temperature. In this research, we analyzed the reduction reaction of copper oxide using formic acid with a Pt catalyst by electron spin resonance analysis and thermal gravimetry analysis. It was found that formic acid was decomposed and radicals were generated under 200 °C. The amount of radicals generated was increased by adding the Pt catalyst. Because of these radicals, both copper(I) oxide and copper(II) oxide start to be decomposed below 200 °C, and the reduction of copper oxide is accelerated by reactants such as H2 and CO from the decomposition of formic acid above 200 °C. The Pt catalyst also accelerates the reaction of copper oxide reduction. Herewith, it is considered that the copper surface can be controlled more precisely by using formic acid to induce direct bonding.

  1. Minimally invasive cosmetic dentistry: smile reconstruction using direct resin bonding.

    Science.gov (United States)

    Prieto, Lucia Trazzi; Araujo, Cintia Tereza Pimenta; de Oliveira, Dayane Carvalho Ramos Salles; de Azevedo Vaz, Sergio Lins; D'Arce, Maria Beatriz Freitas; Paulillo, Luis Alexandre Maffei Sartini

    2014-01-01

    Discrepancies in tooth size and shape can interfere with smile harmony. Composite resin can be used to improve the esthetics of the smile at a low cost while offering good clinical performance. This article presents an approach for restoring and correcting functional, anatomic, and esthetic discrepancies with minimal intervention, using composites and a direct adhesive technique. This conservative restorative procedure provided the patient with maximum personal esthetic satisfaction.

  2. Direct quantitative analysis of phthalate esters as micro-contaminants in cleanroom air and wafer surfaces by auto-thermal desorption--gas chromatography--mass spectrometry.

    Science.gov (United States)

    Kang, Yuhao; Den, Walter; Bai, Hsunling; Ko, Fu-Hsiang

    2005-04-01

    This study established an analytical method for the trace analyses of two phthalate esters, including diethyl phthalate (DEP) and di-n-butyl phthalate (DBP), known as the major constituents of cleanroom micro-contamination detrimental to the reliability of semiconductor devices. Using thermal desorption coupled with a GC-MS system, standard tubes were prepared by delivering liquid standards pre-vaporized by a quasi-vaporizer into Tenax GR tubes for calibration. This method was capable of achieving detection limits of 0.05 microg m(-3) for 0.1 m3 air samples and 0.03 ng cm(-2) for 150-mm wafer surface density. Actual samples collected from a semiconductor cleanroom showed that the concentration of DBP in a polypropylene wafer box (0.45 microg m(-3)) was nearly four times higher than that in the cleanroom environment (0.12 microg m(-3)). The surface contamination of DBP was 0.67 ng cm(-2) for a wafer stored in the wafer box for 24 h. Furthermore, among the three types of heat-resistant O-ring materials tested, Kalrez was found to be particularly suitable for high-temperature processes in semiconductor cleanrooms due to their low emissions of organic vapors. This analytical procedure should serve as an effective monitoring method for the organic micro-contamination in cleanroom environments.

  3. InGaAs-OI Substrate Fabrication on a 300 mm Wafer

    Directory of Open Access Journals (Sweden)

    Sebastien Sollier

    2016-09-01

    Full Text Available In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs wafer on insulator (InGaAs-OI substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM, scanning acoustic microscopy (SAM, and HR-XRD, to insure the crystalline quality of the post transferred layer.

  4. An electret-based energy harvesting device with a wafer-level fabrication process

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Wang, Fei; Hansen, Ole

    2013-01-01

    This paper presents a MEMS energy harvesting device which is able to generate power from two perpendicular ambient vibration directions. A CYTOP polymer is used both as the electret material for electrostatic transduction and as a bonding interface for low-temperature wafer bonding. The device...... is also discussed. With a final chip size of about 1 cm2, a power output of 32.5 nW is successfully harvested with an external load of 17 MΩ, when a harmonic vibration source with an RMS acceleration amplitude of 0.03 g (∼0.3 m s−2) and a resonant frequency of 179 Hz is applied. These results can...

  5. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Mary Hagerott; Olson, S. M. (Aonex Technologies Inc., Pasadena, CA); Banas, M.; Park, Y. -B. (Aonex Technologies Inc., Pasadena, CA); Ladous, C. (Aonex Technologies Inc., Pasadena, CA); Russell, Michael J.; Thaler, Gerald; Zahler, J. M. (Aonex Technologies Inc., Pasadena, CA); Pinnington, T. (Aonex Technologies Inc., Pasadena, CA); Koleske, Daniel David; Atwater, Harry A. (Aonex Technologies Inc., Pasadena, CA)

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  6. Modification of Purine and Pyrimidine Nucleosides by Direct C-H Bond Activation

    Directory of Open Access Journals (Sweden)

    Yong Liang

    2015-03-01

    Full Text Available Transition metal-catalyzed modifications of the activated heterocyclic bases of nucleosides as well as DNA or RNA fragments employing traditional cross-coupling methods have been well-established in nucleic acid chemistry. This review covers advances in the area of cross-coupling reactions in which nucleosides are functionalized via direct activation of the C8-H bond in purine and the C5-H or C6-H bond in uracil bases. The review focuses on Pd/Cu-catalyzed couplings between unactivated nucleoside bases with aryl halides. It also discusses cross-dehydrogenative arylations and alkenylations as well as other reactions used for modification of nucleoside bases that avoid the use of organometallic precursors and involve direct C-H bond activation in at least one substrate. The scope and efficiency of these coupling reactions along with some mechanistic considerations are discussed.

  7. Rh(III-catalyzed directed C–H bond amidation of ferrocenes with isocyanates

    Directory of Open Access Journals (Sweden)

    Satoshi Takebayashi

    2012-10-01

    Full Text Available [RhCp*(OAc2(H2O] [Cp* = pentamethylcyclopentadienyl] catalyzed the C–H bond amidation of ferrocenes possessing directing groups with isocyanates in the presence of 2 equiv/Rh of HBF4·OEt2. A variety of disubstituted ferrocenes were prepared in high yields, or excellent diastereoselectivities.

  8. Direct 2-acetoxylation of quinoline N-oxides via copper catalyzed C-H bond activation.

    Science.gov (United States)

    Chen, Xuan; Zhu, Chongwei; Cui, Xiuling; Wu, Yangjie

    2013-08-07

    An efficient and direct 2-acetoxylation of quinoline N-oxides via copper(I) catalyzed C-H bond activation has been developed. This transformation was achieved using TBHP as an oxidant in the cross-dehydrogenative coupling (CDC) reaction of quinoline N-oxides with aldehydes, and provided a practical pathway to 2-acyloxyl quinolines.

  9. Bond selectivity in electron-induced reaction due to directed recoil on an anisotropic substrate

    Science.gov (United States)

    Anggara, Kelvin; Huang, Kai; Leung, Lydie; Chatterjee, Avisek; Cheng, Fang; Polanyi, John C.

    2016-12-01

    Bond-selective reaction is central to heterogeneous catalysis. In heterogeneous catalysis, selectivity is found to depend on the chemical nature and morphology of the substrate. Here, however, we show a high degree of bond selectivity dependent only on adsorbate bond alignment. The system studied is the electron-induced reaction of meta-diiodobenzene physisorbed on Cu(110). Of the adsorbate's C-I bonds, C-I aligned `Along' the copper row dissociates in 99.3% of the cases giving surface reaction, whereas C-I bond aligned `Across' the rows dissociates in only 0.7% of the cases. A two-electronic-state molecular dynamics model attributes reaction to an initial transition to a repulsive state of an Along C-I, followed by directed recoil of C towards a Cu atom of the same row, forming C-Cu. A similar impulse on an Across C-I gives directed C that, moving across rows, does not encounter a Cu atom and hence exhibits markedly less reaction.

  10. Selective low temperature microcap packaging technique through flip chip and wafer level alignment

    Science.gov (United States)

    Pan, C. T.

    2004-04-01

    In this study, a new technique of selective microcap bonding for packaging 3-D MEMS (Micro Electro Mechanical Systems) devices is presented. Microcap bonding on a selected area of the host wafer was successfully demonstrated through flip chip and wafer level alignment. A passivation treatment was developed to separate the microcap from the carrier wafer. A thick metal nickel (Ni) microcap was fabricated by an electroplating process. Its stiffness is superior to that of thin film poly-silicon made by the surface micromachining technique. For the selective microcap packaging process, photo definable materials served as the intermediate adhesive layer between the host wafer and the metal microcap on the carrier wafer. Several types of photo definable material used as the adhesive layer were tested and characterized for bonding strength. The experimental result shows that excellent bonding strength at low bonding temperature can be achieved.

  11. Indirect versus direct photoionization with ultrashort pulses: interferences and time-resolved bond-length changes

    Science.gov (United States)

    Gräfe, S.; Engel, V.

    2004-02-01

    The photoionization of NaI molecules with femtosecond laser pulses leads to photoelectron distributions which vary with the delay between a pump- and a probe-pulse. If the vibrational wave packet as prepared in the pump-transition is located in a region where the bonding character is ionic, the photoelectron, due to its localization on the iodine atom, may be ejected directly or be scattered from the Na + ion. This leads to structures in the photoelectron spectrum which, in turn, reflect temporal bond-length changes.

  12. Within-wafer CD variation induced by wafer shape

    Science.gov (United States)

    Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

    2016-03-01

    In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer

  13. Wafer bonding process for building MEMS devices

    Science.gov (United States)

    Pabo, Eric F.; Meiler, Josef; Matthias, Thorsten

    2014-06-01

    The technology for the measurement of colour rendering and colour quality is not new, but many parameters related to this issue are currently changing. A number of standard methods were developed and are used by different specialty areas of the lighting industry. CIE 13.3 has been the accepted standard implemented by many users and used for many years. Light-emitting Diode (LED) technology moves at a rapid pace and, as this lighting source finds wider acceptance, it appears that traditional colour-rendering measurement methods produce inconsistent results. Practical application of various types of LEDs yielded results that challenged conventional thinking regarding colour measurement of light sources. Recent studies have shown that the anatomy and physiology of the human eye is more complex than formerly accepted. Therefore, the development of updated measurement methodology also forces a fresh look at functioning and colour perception of the human eye, especially with regard to LEDs. This paper includes a short description of the history and need for the measurement of colour rendering. Some of the traditional measurement methods are presented and inadequacies are discussed. The latest discoveries regarding the functioning of the human eye and the perception of colour, especially when LEDs are used as light sources, are discussed. The unique properties of LEDs when used in practical applications such as luminaires are highlighted.

  14. Organic chemistry. Functionalization of C(sp3)-H bonds using a transient directing group.

    Science.gov (United States)

    Zhang, Fang-Lin; Hong, Kai; Li, Tuan-Jie; Park, Hojoon; Yu, Jin-Quan

    2016-01-15

    Proximity-driven metalation has been extensively exploited to achieve reactivity and selectivity in carbon-hydrogen (C-H) bond activation. Despite the substantial improvement in developing more efficient and practical directing groups, their stoichiometric installation and removal limit efficiency and, often, applicability as well. Here we report the development of an amino acid reagent that reversibly reacts with aldehydes and ketones in situ via imine formation to serve as a transient directing group for activation of inert C-H bonds. Arylation of a wide range of aldehydes and ketones at the β or γ positions proceeds in the presence of a palladium catalyst and a catalytic amount of amino acid. The feasibility of achieving enantioselective C-H activation reactions using a chiral amino acid as the transient directing group is also demonstrated.

  15. Wafer-Level Vacuum Packaging of Smart Sensors.

    Science.gov (United States)

    Hilton, Allan; Temple, Dorota S

    2016-10-31

    The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors-"low cost" for ubiquitous presence, and "smart" for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

  16. Wafer-Level Vacuum Packaging of Smart Sensors

    Directory of Open Access Journals (Sweden)

    Allan Hilton

    2016-10-01

    Full Text Available The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

  17. A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

    Science.gov (United States)

    Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

    2012-07-01

    We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

  18. Palladium(II)-Catalyzed C-H Bond Activation/C-C and C-O Bond Formation Reaction Cascade: Direct Synthesis of Coumestans.

    Science.gov (United States)

    Neog, Kashmiri; Borah, Ashwini; Gogoi, Pranjal

    2016-12-02

    A palladium catalyzed cascade reaction of 4-hydroxycoumarins and in situ generated arynes has been developed for the direct synthesis of coumestans. This cascade strategy proceeds via C-H bond activation/C-O and C-C bond formations in a single reaction vessel. This methodology affords moderate to good yields of coumestans and is tolerant of a variety of functional groups including halide. The methodology was applied to the synthesis of natural product flemichapparin C.

  19. 3D互连中光刻与晶圆级键合技术面临的挑战,趋势及解决方案%Challenges, Trends and Solutions for 3D Interconnects in Lithography and Wafer Level Bonding Techniques

    Institute of Scientific and Technical Information of China (English)

    Margarete Zoberbier; Erwin Hell; Kathy Cook; Marc Hennemayer; Dr.-Ing.Barbara Neubert

    2010-01-01

    Technology advances such as 3D Integration are expanding the potential applications of products into mass markets such as consumer electronics. These new technologies are also pushing the envelope of what's currently possible for many production processes, including lithography processes and wafer bonding.There is still the need to coat, pattern and etch structures. This paper will explore some of the lithographic challenges associated with 3D interconnection technology. Wafer bonding techniques as used in the 3D Packaging will be described with all the challenges and available solutions and trends.Furthermore a new Maskalinger technology will be introduced which allows extreme alignment accuracy assisted by pattern recognition down to 0.25 μm.An overall introduction on the challenges, trends and solutions for 3D interconnects in lithography and Wafer Level bonding techniques and the SUSS's equipment platform will be described accordingly to the needed processes. The processing issues encountered in those techniques will be discussed with a focus on wafer bonding and lithography steps.%目前,3D集成技术的优势正在扩展消费类电子产品的潜在应用进入批量市场.这些新技术也在推进着当前许多生产工艺中的一些封装技术包括光刻和晶圆键合成为可能.其中还需要涂胶,作图和蚀刻结构.探讨一些与三维互连相关的光刻技术的挑战.用于三维封装的晶圆键合技术将结合这些挑战和可用的解决方案及发展趋势一并介绍.此外还介绍了一种新的光刻设备,它可通过图形识别技术的辅助实现低于0.25μm的最终对准精度.对于采用光刻和晶圆级键合技术在三维互连中的挑战,趋势和解决方案及SUSS公司设备平台的整体介绍将根据工艺要求来描述.在这些技术中遇到的工艺问题将集中在晶圆键合和光刻工序方面重点讨论.

  20. Bond strength of individual carbon nanotubes grown directly on carbon fibers

    Science.gov (United States)

    Kim, Kyoung Ju; Lee, Geunsung; Kim, Sung-Dae; Kim, Seong-Il; Youk, Ji Ho; Lee, Jinyong; Kim, Young-Woon; Yu, Woong-Ryeol

    2016-10-01

    The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via in situ pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (˜200 MPa), 8-10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon-carbon interactions between the CNT (its bottom atoms) and the carbon substrate.

  1. Bond strength of individual carbon nanotubes grown directly on carbon fibers.

    Science.gov (United States)

    Kim, Kyoung Ju; Lee, Geunsung; Kim, Sung-Dae; Kim, Seong-Il; Youk, Ji Ho; Lee, Jinyong; Kim, Young-Woon; Yu, Woong-Ryeol

    2016-10-07

    The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via in situ pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (∼200 MPa), 8-10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon-carbon interactions between the CNT (its bottom atoms) and the carbon substrate.

  2. Comparative study on direct and indirect bracket bonding techniques regarding time length and bracket detachment

    Directory of Open Access Journals (Sweden)

    Jefferson Vinicius Bozelli

    2013-12-01

    Full Text Available OBJECTIVE: The aim of this study was to assess the time spent for direct (DBB - direct bracket bonding and indirect (IBB - indirect bracket bonding bracket bonding techniques. The time length of laboratorial (IBB and clinical steps (DBB and IBB as well as the prevalence of loose bracket after a 24-week follow-up were evaluated. METHODS: Seventeen patients (7 men and 10 women with a mean age of 21 years, requiring orthodontic treatment were selected for this study. A total of 304 brackets were used (151 DBB and 153 IBB. The same bracket type and bonding material were used in both groups. Data were submitted to statistical analysis by Wilcoxon non-parametric test at 5% level of significance. RESULTS: Considering the total time length, the IBB technique was more time-consuming than the DBB (p < 0.001. However, considering only the clinical phase, the IBB took less time than the DBB (p < 0.001. There was no significant difference (p = 0.910 for the time spent during laboratorial positioning of the brackets and clinical session for IBB in comparison to the clinical procedure for DBB. Additionally, no difference was found as for the prevalence of loose bracket between both groups. CONCLUSION: the IBB can be suggested as a valid clinical procedure since the clinical session was faster and the total time spent for laboratorial positioning of the brackets and clinical procedure was similar to that of DBB. In addition, both approaches resulted in similar frequency of loose bracket.

  3. The Significance of Multivalent Bonding Motifs and “Bond Order” in DNA-Directed Nanoparticle Crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Thaner, Ryan V.; Eryazici, Ibrahim; Macfarlane, Robert J.; Brown, Keith A.; Lee, Byeongdu; Nguyen, SonBinh T.; Mirkin, Chad A.

    2016-05-18

    Multivalent oligonucleotide-based bonding elements have been synthesized and studied for the assembly and crystallization of gold nanoparticles. Through the use of organic branching points, divalent and trivalent DNA linkers were readily incorporated into the oligonucleotide shells that define DNA-nanoparticles and compared to monovalent linker systems. These multivalent bonding motifs enable the change of "bond strength" between particles and therefore modulate the effective "bond order." In addition, the improved accessibility of strands between neighboring particles, either due to multivalency or modifications to increase strand flexibility, gives rise to superlattices with less strain in the crystallites compared to traditional designs. Furthermore, the increased availability and number of binding modes also provide a new variable that allows previously unobserved crystal structures to be synthesized, as evidenced by the formation of a thorium phosphide superlattice.

  4. Wafer-level vacuum/hermetic packaging technologies for MEMS

    Science.gov (United States)

    Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

    2010-02-01

    An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

  5. Direct-bonded Magnesite-Chrome Bricks for Kilns and Furnaces of Building Materials Industry JC 497-92 ( 96 )

    Institute of Scientific and Technical Information of China (English)

    Yu Lingyan; Chai Junlan

    2008-01-01

    @@ 1 Contents and Applied Scope This standard specifies the classification, shapes and dimensions, technical requirements, test methods, inspection rules, marking, packing, transportation, storage and quality certificate of direct-bonded magne-site -chrome bricks for building materials industry.

  6. Experimental Characterisation and Multi-Physic Modelling of Direct Bonding Mechanical Behaviour: Application to Spatial Optical Systems

    Science.gov (United States)

    Cocheteau, N.; Maurel-Pantel, A.; Lebon, F.; Rosu, I.; Ait-Zaid, S.; Savin de Larclause, I.; Salaun, Y.

    2014-06-01

    Direct bonding is a well-known process. However in order to use this process in spatial instrument fabrication the mechanical resistance needs to be quantified precisely. In order to improve bonded strength, optimal parameters of the process are found by studying the influence of annealing time, temperature and roughness which are studied using three experimental methods: double shear, cleavage and wedge tests. Those parameters are chosen thanks to the appearance of time/temperature equivalence. All results brought out the implementation of a multi-physic model to predict the mechanical behavior of direct bonding interface.

  7. Direct Acylation of C(sp(3))-H Bonds Enabled by Nickel and Photoredox Catalysis.

    Science.gov (United States)

    Joe, Candice L; Doyle, Abigail G

    2016-03-14

    Using nickel and photoredox catalysis, the direct functionalization of C(sp(3))-H bonds of N-aryl amines by acyl electrophiles is described. The method affords a diverse range of α-amino ketones at room temperature and is amenable to late-stage coupling of complex and biologically relevant groups. C(sp(3))-H activation occurs by photoredox-mediated oxidation to generate α-amino radicals which are intercepted by nickel in catalytic C(sp(3))-C coupling. The merger of these two modes of catalysis leverages nickel's unique properties in alkyl cross-coupling while avoiding limitations commonly associated with transition-metal-mediated C(sp(3))-H activation, including requirements for chelating directing groups and high reaction temperatures.

  8. Modeling radiative properties of nanoscale patterned wafers

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Temperature nonuniformity in rapid thermal processing of wafers is a critical problem facing the semiconductor industry. One cause of the problem is the nonuniform absorption of thermal radiation in patterned wafers where the optical properties vary across the wafer surface. This paper presents a parametric study of the radiative properties of patterned wafers, considering the effect of temperature, wavelength, and polarization. The finite-difference time-domain (FDTD) method is employed to examine the effect of various trench sizes on the radiative properties via numerically solving the Maxwell equations. The effective medium theory (EMT) is also used to help explain the absorptance prediction. The results show that in the cases with trench size variation, the resonance cavity effect may increase the absorptance as the trench width increases. And in the cases with trench size increasing at several different filling ratios, the absorptance does not change much at small filling ratio. The effects of the resonant cavity, diffraction, wave interferences on the spectral-directional absorptance were also discussed. This work is of great importance for optimization of advanced annealing techniques in semiconductor manufacturing.

  9. Heterojunction characteristics of ZnO and CuO substrates formed by direct bonding

    Energy Technology Data Exchange (ETDEWEB)

    Abe, Hiroshi; Fujishima, Masahide; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, Yuri-honjo, Akita 015-0055 (Japan)

    2012-06-15

    The n-ZnO/p-CuO heterojunction characteristics have been investigated by direct bonding of ZnO and CuO substrates at room temperatures, and by post-annealing at 800 C. The ZnO substrate was fabricated by mixing of ZnO and Al{sub 2}O{sub 3} (2%) powders, pressing at 50 MPa, and sintering at 1400 C while the CuO substrate was fabricated by mixing of CuO and Li{sub 2}CO{sub 3} (1%) powders, pressing at 300 MPa, and sintering at 700 C. Rectifying behaviour with an ideality factor of 126 was observed after bonding of these substrates. Post-annealing of the heterojunction, however, significantly increased both the forward and the reverse currents, and the rectifying behaviour was lost. Symmetrical I-V curves with threshold voltages of about {+-} 1 V were observed and this degradation could be explained by impurity (Al and Li) segregation at the junction interface. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. A model ternary heparin conjugate by direct covalent bond strategy applied to drug delivery system.

    Science.gov (United States)

    Wang, Ying; Xin, Dingcheng; Hu, Jiawen; Liu, Kaijian; Pan, Jiangao; Xiang, Jiannan

    2009-01-01

    A model ternary heparin conjugate by direct covalent bond strategy has been developed, in which modified heparin using active mix anhydride as intermediate conjugates with model drug molecule and model specific ligand, respectively. Designed ester bonds between model drug and heparin facilitate hydrolysis kinetics research. The strategy can be extended to design and synthesize a targeted drug delivery system. The key point is to use mixed anhydride groups as activating intermediates to mediate the synthesis of the ternary heparin conjugate. Formation of mixed anhydride is detected by the conductimetry experiment. The ternary heparin conjugate is characterized by (13)C NMR, FT-IR and GPC, respectively. The decreased trend on degree of substitution (DS) is consistent with that of introduced anticancer drug and specific ligand in drug delivery system. Moreover, their anticoagulant activity is evaluated by measuring activated partial thromboplastin time (APTT) and anti-factor Xa activity. The results show that model ternary heparin conjugate with reduced anticoagulant activity may avoid the risk of severe hemorrhagic complication during the administration and is potential to develop a safe and effective drug delivery system on anticancer research.

  11. Interface of Si/Si Directly Wafer Bonding%Si/Si直接键合界面性质的研究

    Institute of Scientific and Technical Information of China (English)

    陈松岩; 谢生; 何国荣

    2004-01-01

    通过三步直接键合方法实现了Si/Si键合.采用XPS、FTIR、I-V、拉伸强度等手段对Si/Si键合结构的界面特性作了深入广泛的研究.研究结果表明,高温退火后,在键合界面没有Si-H和Si-OH网络存在,键合界面主要由单质Si和不定形氧化硅SiOx组成.同时,研究还表明,I-V特性和键合强度强烈地依赖于退火温度.

  12. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    Energy Technology Data Exchange (ETDEWEB)

    Kojima, Takuto, E-mail: tkojima@toyota-ti.ac.jp; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)

    2015-09-15

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

  13. AgNO2-mediated direct nitration of the quinoxaline tertiary benzylic C-H bond and direct conversion of 2-methyl quinoxalines into related nitriles.

    Science.gov (United States)

    Wu, Degui; Zhang, Jian; Cui, Jianhai; Zhang, Wei; Liu, Yunkui

    2014-09-25

    A unique method for AgNO2-mediated direct nitration of the quinoxaline tertiary C-H bond and direct conversion of 2-methyl quinoxalines into 2-quinoxaline nitriles under oxidative conditions has been developed. This protocol provides an efficient way to access quinoxaline containing nitroalkanes and nitriles depending on different substrate selection.

  14. Rapid fabrication and packaging of AlGaN/GaN high-temperature ultraviolet photodetectors using direct wire bonding

    Science.gov (United States)

    So, Hongyun; Senesky, Debbie G.

    2016-07-01

    Cost-effective fabrication and rapid packaging of AlGaN/GaN ultraviolet (UV) photodetectors was demonstrated using direct wire bonding between aluminum wires and a GaN surface. The fabricated photodetectors showed stable dark current levels through the highly conductive 2D electron gas (2DEG), which was electrically connected to aluminum bonding wires. At room temperature, the current passing through the 2DEG rapidly increased upon exposure to UV light because of the generated electrons excited in the AlGaN/GaN layers. In addition, the devices showed consistent and reliable operation at high temperatures up to 100 °C with mechanically stable bonding wires (pull strength of 3-5.2 gram-force), supporting the use of direct wire bonding techniques to fabricate simple AlGaN/GaN sensors for UV detection within harsh environments, such as downhole and space exploration applications.

  15. The direct determination of double bond positions in lipid mixtures by liquid chromatography/in-line ozonolysis/mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Chenxing; Zhao, Yuan-Yuan [Department of Agricultural, Food and Nutritional Science, University of Alberta, Edmonton, Alberta T6G 2P5 (Canada); Curtis, Jonathan M., E-mail: jcurtis1@ualberta.ca [Department of Agricultural, Food and Nutritional Science, University of Alberta, Edmonton, Alberta T6G 2P5 (Canada)

    2013-01-31

    Highlights: ► An ozonolysis reactor was coupled in-line with mass spectrometry (O{sub 3}-MS). ► Double bond positions in FAME were determined unambiguously without standards. ► LC directly connected to O{sub 3}-MS allowed double bond localization in lipid mixtures. ► LC/O{sub 3}-MS applied to bovine fat demonstrated practical use in lipid analysis. -- Abstract: The direct determination of double bond positions in unsaturated lipids using in-line ozonolysis-mass spectrometry (O{sub 3}-MS) is described. In this experiment, ozone penetrates through the semi-permeable Teflon AF-2400 tubing containing a flow of a solution of fatty acid methyl esters (FAME). Unsaturated FAME are thus oxidized by the ozone and cleaved at the double bond positions. The ozonolysis products then flow directly into the atmospheric pressure photoionization (APPI) source of a mass spectrometer for analysis. Aldehyde products retaining the methyl ester group are indicative of the double bond positions in unsaturated FAME. For the first time, O{sub 3}-MS is able to couple directly to high performance liquid chromatography (HPLC), making the double bond localization in lipid mixtures possible. The application of LC/O{sub 3}-MS has been demonstrated for a fat sample from bovine adipose tissue. A total of 9 unsaturated FAME including 6 positional isomers were identified unambiguously, without comparison to standards. The in-line ozonolysis reaction apparatus is applicable to most mass spectrometers without instrumental modification; it is also directly compatible with various LC columns. The LC/O{sub 3}-MS method described here is thus a practical, versatile and easy to use new approach to the direct determination of double bond positions in lipids, even in complex mixtures.

  16. Directed Binding of Gliding Bacterium, Mycoplasma mobile, Shown by Detachment Force and Bond Lifetime

    Directory of Open Access Journals (Sweden)

    Akihiro Tanaka

    2016-06-01

    Full Text Available Mycoplasma mobile, a fish-pathogenic bacterium, features a protrusion that enables it to glide smoothly on solid surfaces at a velocity of up to 4.5 µm s−1 in the direction of the protrusion. M. mobile glides by a repeated catch-pull-release of sialylated oligosaccharides fixed on a solid surface by hundreds of 50-nm flexible “legs” sticking out from the protrusion. This gliding mechanism may be explained by a possible directed binding of each leg with sialylated oligosaccharides, by which the leg can be detached more easily forward than backward. In the present study, we used a polystyrene bead held by optical tweezers to detach a starved cell at rest from a glass surface coated with sialylated oligosaccharides and concluded that the detachment force forward is 1.6- to 1.8-fold less than that backward, which may be linked to a catch bond-like behavior of the cell. These results suggest that this directed binding has a critical role in the gliding mechanism.

  17. MEMS Wafer-level Packaging Technology Using LTCC Wafer

    Science.gov (United States)

    Mohri, Mamoru; Esashi, Masayoshi; Tanaka, Shuji

    This paper describes a versatile and reliable wafer-level hermetic packaging technology using an anodically-bondable low temperature co-fired ceramic (LTCC) wafer, in which multi-layer electrical feedthroughs can be embedded. The LTCC wafer allows many kinds of micro electro mechanical systems (MEMS) to be more flexibly designed and more easily packaged. The hermeticity of vacuum-sealed cavities was confirmed after 3000 cycles of thermal shock (-40°C×30min/+125°C×30min) by diaphragm method. To practically apply the LTCC wafer to a variety of MEMS, the electrical connection between MEMS on a Si wafer and feedthroughs in the LTCC should be established by a simple and reliable method. We have developed a new electrical connection methods; The electrical connection is established by porous Au bumps, which are a part of Au vias exposed in wet-etched cavities on the LTCC wafer. 100% yield of both electrical connection and hermetic sealing was demonstrated. A thermal shock test up to 3000 cycles confirmed the reliability of this packaging technology.

  18. Wafer integrated micro-scale concentrating photovoltaics

    Science.gov (United States)

    Gu, Tian; Li, Duanhui; Li, Lan; Jared, Bradley; Keeler, Gordon; Miller, Bill; Sweatt, William; Paap, Scott; Saavedra, Michael; Das, Ujjwal; Hegedus, Steve; Tauke-Pedretti, Anna; Hu, Juejun

    2017-09-01

    Recent development of a novel micro-scale PV/CPV technology is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The wafer-embedded micro-concentrating elements is shown to considerably improve the concentration-acceptance-angle product, potentially leading to dramatically reduced module materials and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture, which makes the WPV module compatible with commercial flat panel infrastructures. The PV/CPV hybrid architecture further allows the collection of both direct and diffuse sunlight, thus extending the geographic and market domains for cost-effective PV system deployment. The WPV approach can potentially benefits from both the high performance of multijunction cells and the low cost of flat plate Si PV systems.

  19. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  20. Wafer Fusion for Integration of Semiconductor Materials and Devices

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

    1999-05-01

    We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

  1. Direct Functionalization of Nitrogen Heterocycles via Rh-Catalyzed C-H Bond Activation

    Energy Technology Data Exchange (ETDEWEB)

    Lewis, Jared; Bergman, Robert; Ellman, Jonathan

    2008-02-04

    Nitrogen heterocycles are present in many compounds of enormous practical importance, ranging from pharmaceutical agents and biological probes to electroactive materials. Direct funtionalization of nitrogen heterocycles through C-H bond activation constitutes a powerful means of regioselectively introducing a variety of substituents with diverse functional groups onto the heterocycle scaffold. Working together, our two groups have developed a family of Rh-catalyzed heterocycle alkylation and arylation reactions that are notable for their high level of functional-group compatibility. This Account describes their work in this area, emphasizing the relevant mechanistic insights that enabled synthetic advances and distinguished the resulting transformations from other methods. They initially discovered an intramolecular Rh-catalyzed C-2-alkylation of azoles by alkenyl groups. That reaction provided access to a number of di-, tri-, and tetracyclic azole derivatives. They then developed conditions that exploited microwave heating to expedite these reactions. While investigating the mechanism of this transformation, they discovered that a novel substrate-derived Rh-N-heterocyclic carbene (NHC) complex was involved as an intermediate. They then synthesized analogous Rh-NHC complexes directly by treating precursors to the intermediate [RhCl(PCy{sub 3}){sub 2}] with N-methylbenzimidazole, 3-methyl-3,4-dihydroquinazolein, and 1-methyl-1,4-benzodiazepine-2-one. Extensive kinetic analysis and DFT calculations supported a mechanism for carbene formation in which the catalytically active RhCl(PCy{sub 3}){sub 2} fragment coordinates to the heterocycle before intramolecular activation of the C-H bond occurs. The resulting Rh-H intermediate ultimately tautomerizes to the observed carbene complex. With this mechanistic information and the discovery that acid co-catalysts accelerate the alkylation, they developed conditions that efficiently and intermolecularly alkylate a variety of

  2. Direct functionalization of nitrogen heterocycles via Rh-catalyzed C-H bond activation.

    Science.gov (United States)

    Lewis, Jared C; Bergman, Robert G; Ellman, Jonathan A

    2008-08-01

    [Reaction: see text]. Nitrogen heterocycles are present in many compounds of enormous practical importance, ranging from pharmaceutical agents and biological probes to electroactive materials. Direct functionalization of nitrogen heterocycles through C-H bond activation constitutes a powerful means of regioselectively introducing a variety of substituents with diverse functional groups onto the heterocycle scaffold. Working together, our two groups have developed a family of Rh-catalyzed heterocycle alkylation and arylation reactions that are notable for their high level of functional-group compatibility. This Account describes our work in this area, emphasizing the relevant mechanistic insights that enabled synthetic advances and distinguished the resulting transformations from other methods. We initially discovered an intramolecular Rh-catalyzed C-2 alkylation of azoles by alkenyl groups. That reaction provided access to a number of di-, tri-, and tetracyclic azole derivatives. We then developed conditions that exploited microwave heating to expedite these reactions. While investigating the mechanism of this transformation, we discovered that a novel substrate-derived Rh- N-heterocyclic carbene (NHC) complex was involved as an intermediate. We then synthesized analogous Rh-NHC complexes directly by treating precursors to the intermediate [RhCl(PCy 3)2] with N-methylbenzimidazole, 3-methyl-3,4-dihydroquinazoline, and 1-methyl-1,4-benzodiazepine-2-one. Extensive kinetic analysis and DFT calculations supported a mechanism for carbene formation in which the catalytically active RhCl(PCy 3) 2 fragment coordinates to the heterocycle before intramolecular activation of the C-H bond occurs. The resulting Rh-H intermediate ultimately tautomerizes to the observed carbene complex. With this mechanistic information and the discovery that acid cocatalysts accelerate the alkylation, we developed conditions that efficiently and intermolecularly alkylate a variety of

  3. Note: Near infrared interferometric silicon wafer metrology.

    Science.gov (United States)

    Choi, M S; Park, H M; Joo, K N

    2016-04-01

    In this investigation, two near infrared (NIR) interferometric techniques for silicon wafer metrology are described and verified with experimental results. Based on the transparent characteristic of NIR light to a silicon wafer, the fiber based spectrally resolved interferometry can measure the optical thickness of the wafer and stitching low coherence scanning interferometry can reconstruct entire surfaces of the wafer.

  4. Characterization of Boron Diffusion Phenomena According to the Specific Resistivity of N-Type Si Wafer.

    Science.gov (United States)

    Lee, Woo-Jin; Choi, Chel-Jong; Park, Gye-Choon; Yang, O-Bong

    2016-02-01

    This paper is directed to characterize the boron diffusion process according to the specific resistivity of the Si wafer. N-type Si wafers were used with the specific resistivity of 0.5-3.2 omega-cm, 1.0-6.5 omega-cm and 2.0-8.0 omega-cm. The boron tribromide (BBr3) was used as boron source to create the PN junction on N-type Si wafer. The boron diffusion in N-type Si wafer was characterized by sheet resistance of wafer surface, secondary ion mass spectroscopy measurements (SIMS) and surface life time analysis. The degree of boron diffusion was depended on the variation in specific resistivity and sheet resistance of the bare N-type Si wafer. The boron diffused N-Si wafer exhibited the average junction depth of 750 nm and boron concentration of 1 x 10(19). N-type Si wafer with the different specific resistance considerably affected the boron diffusion length and life time of Si wafer. It was found that the lifetime of boron diffused wafer was proportional to the sheet resistance and resistivity. However, optimization process may necessary to achieve the high efficiency through the high sheet resistance wafer, because the metallization process control is very sensitive.

  5. The role of continuing bonds in coping with grief: overview and future directions.

    Science.gov (United States)

    Root, Briana L; Exline, Julie Juola

    2014-01-01

    The existing empirical literature depicts a complex picture of the role that continuing bonds play in coping with bereavement, with contradictory findings emerging across studies. This article presents an overview of continuing bonds research and highlights several areas ripe for exploration. First, definitional issues are identified. Second, three paths for clarification are presented: the bereaved's perception of the bond as positive or negative, the quality of the predeath relationship, and the bereaved's afterlife beliefs. Through refining the definition and exploring these potential avenues of research, we hope to clarify the roles that continuing bonds may play in coping with bereavement.

  6. Critical Cleaning Requirements for Back End Wafer Bumping Processes

    Energy Technology Data Exchange (ETDEWEB)

    Bixenman, M. [Kyzen Corporation (United States)

    2000-04-24

    As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packages in a huge device with hundreds of leads. The solution is bumps; hold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research gas focused on enhanced cleaning solutions that meet this critical cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein. (author). 9 refs.

  7. Dislocation structure in interfaces between Si wafers with hybrid crystal orientation

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, Vladimir [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Zakharov, Nikolai; Pippel, Eckhard; Werner, Peter [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Saale) (Germany); Milvidskii, Mikhail [Institute of Rare Metals ' Giredmet' , Moscow (Russian Federation); Ries, Mike; Seacrist, Mike [MEMC Inc., 501 Pearl Drive, St. Peters, MO (United States); Falster, Robert [MEMC Electronic Materials SpA, Novara (Italy)

    2009-08-15

    Dislocation structure in Si(110)/Si(001) wafer bonding (WB) structures have been studied by transmission electron microscopy (TEM). The behavior of intermediate native oxide layers during high temperature annealing, the nature of interfacial dislocations and dislocation generation mechanisms are the main issues of this work. Samples were fabricated by direct hydrophilic WB of 200 mm wafers with native oxide. The as-bonded structures containing 140-nm thick layers were thermally annealed in the temperature range 1150 to 1200 C. The dislocation structure composed of a pattern of unidirectional parallel but broken dislocation arrays is formed in the structures with partial or entire dissolution of the oxide layer. The contrast of broken dark lines usually observed in TEM bright field micrographs is supposed to be caused by integral effect of steps compensating twist misorientation and arrays of 60-degree dislocations. We suggest that nucleation of dislocation loops at the interface due to the agglomeration of intrinsic point defects is a plausible mechanism of dislocation generation. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

    DEFF Research Database (Denmark)

    Hermansson, Karin; Grey, Francois; Bengtsson, Stefan;

    1998-01-01

    Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading...

  9. Bond strength durability of direct and indirect composite systems following surface conditioning for repair

    NARCIS (Netherlands)

    Passos, Sheila Pestana; Ozcan, Mutlu; Vanderlei, Aleska Dias; Leite, Fabiola Pessoa Pereira; Kimpara, Estevao Tomomitsu; Bottino, Marco Antonio

    2007-01-01

    Purpose: This study evaluated the effect of surface conditioning methods and thermocycling on the bond strength between a resin composite and an indirect composite system in order to test the repair bond strength. Materials and Methods: Eighteen blocks (5 x 5 x 4 mm) of indirect resin composite (Sin

  10. Twelve-year results of a direct-bonded partial prosthesis in a patient with advanced periodontitis: a clinical report.

    Science.gov (United States)

    Minami, Hiroyuki; Minesaki, Yoshito; Suzuki, Shiro; Tanaka, Takuo

    2012-08-01

    Prosthodontic treatment for patients with advanced periodontitis is a therapeutic challenge. A minimally invasive technique is preferred to preserve the remaining mobile abutment teeth. This report describes the initial clinical treatment and 12-year follow-up of a direct-bonded prosthesis reinforced with a cast metal framework, used as a conservative treatment option to replace periodontally involved maxillary lateral incisors.

  11. New Initiation Modes for Directed Carbonylative C–C Bond Activation: Rhodium-Catalyzed (3 + 1 + 2) Cycloadditions of Aminomethylcyclopropanes

    Science.gov (United States)

    2016-01-01

    Under carbonylative conditions, neutral Rh(I)-systems modified with weak donor ligands (AsPh3 or 1,4-oxathiane) undergo N-Cbz, N-benzoyl, or N-Ts directed insertion into the proximal C–C bond of aminomethylcyclopropanes to generate rhodacyclopentanone intermediates. These are trapped by N-tethered alkenes to provide complex perhydroisoindoles. PMID:27709913

  12. Direct assessment of quantum nuclear effects on hydrogen bond strength by constrained-centroid ab initio path integral molecular dynamics

    Science.gov (United States)

    Walker, Brent; Michaelides, Angelos

    2010-11-01

    The impact of quantum nuclear effects on hydrogen (H-) bond strength has been inferred in earlier work from bond lengths obtained from path integral molecular dynamics (PIMD) simulations. To obtain a direct quantitative assessment of such effects, we use constrained-centroid PIMD simulations to calculate the free energy changes upon breaking the H-bonds in dimers of HF and water. Comparing ab initio simulations performed using PIMD and classical nucleus molecular dynamics (MD), we find smaller dissociation free energies with the PIMD method. Specifically, at 50 K, the H-bond in (HF)2 is about 30% weaker when quantum nuclear effects are included, while that in (H2O)2 is about 15% weaker. In a complementary set of simulations, we compare unconstrained PIMD and classical nucleus MD simulations to assess the influence of quantum nuclei on the structures of these systems. We find increased heavy atom distances, indicating weakening of the H-bond consistent with that observed by direct calculation of the free energies of dissociation.

  13. Direct approaches to nitriles via highly efficient nitrogenation strategy through C-H or C-C bond cleavage.

    Science.gov (United States)

    Wang, Teng; Jiao, Ning

    2014-04-15

    Because of the importance of nitrogen-containing compounds in chemistry and biology, organic chemists have long focused on the development of novel methodologies for their synthesis. For example, nitrogen-containing compounds show up within functional materials, as top-selling drugs, and as bioactive molecules. To synthesize these compounds in a green and sustainable way, researchers have focused on the direct functionalization of hydrocarbons via C-H or C-C bond cleavage. Although researchers have made significant progress in the direct functionalization of simple hydrocarbons, direct C-N bond formation via C-H or C-C bond cleavage remains challenging, in part because of the unstable character of some N-nucleophiles under oxidative conditions. The nitriles are versatile building blocks and precursors in organic synthesis. Recently, chemists have achieved the direct C-H cyanation with toxic cyanide salts in the presence of stoichiometric metal oxidants. In this Account, we describe recent progress made by our group in nitrile synthesis. C-H or C-C bond cleavage is a key process in our strategy, and azides or DMF serve as the nitrogen source. In these reactions, we successfully realized direct nitrile synthesis using a variety of hydrocarbon groups as nitrile precursors, including methyl, alkenyl, and alkynyl groups. We could carry out C(sp(3))-H functionalization on benzylic, allylic, and propargylic C-H bonds to produce diverse valuable synthetic nitriles. Mild oxidation of C═C double-bonds and C≡C triple-bonds also produced nitriles. The incorporation of nitrogen within the carbon skeleton typically involved the participation of azide reagents. Although some mechanistic details remain unclear, studies of these nitrogenation reactions implicate the involvement of a cation or radical intermediate, and an oxidative rearrangement of azide intermediate produced the nitrile. We also explored environmentally friendly oxidants, such as molecular oxygen, to make our

  14. The electrostatic-alloy bonding technique used in MEMS

    Institute of Scientific and Technical Information of China (English)

    WANG Wei; CHEN Wei-ping

    2006-01-01

    Electrostatic-alloy bonding of silicon wafer with glass deposited by Au to form Si/Au-glass water,and bonding of Si/Au-glass with silicon wafer were researched during fabrication of pressure sensors.The silicon wafer and glass wafer with an Au film resistor were bonded by electrostatic bonding,and then Si-Au alloy bonding was formed by annealing at 400℃ for 2 h.The air sealability of the cavity after bonding was finally tested using the N2 filling method.The results indicate that large bond strength was obtained at the bonding interface.This process was used in fabricating a pressure sensor with a sandwich structure.The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.

  15. Wafer Replacement Cluster Tool (Presentation);

    Energy Technology Data Exchange (ETDEWEB)

    Branz, H. M.

    2008-04-01

    This presentation on wafer replacement cluster tool discusses: (1) Platform for advanced R and D toward SAI 2015 cost goal--crystal silicon PV at area costs closer to amorphous Si PV, it's 15% efficiency, inexpensive substrate, and moderate temperature processing (<800 C); (2) Why silicon?--industrial and knowledge base, abundant and environmentally benign, market acceptance, and good efficiency; and (3) Why replace wafers?--expensive, high embedded energy content, and uses 50-100 times more silicon than needed.

  16. Laser-assisted direct joining of AISI304 stainless steel with polycarbonate sheets: Thermal analysis, mechanical characterization, and bonds morphology

    Science.gov (United States)

    Lambiase, F.; Genna, S.

    2017-02-01

    Laser-Assisted Metal and Plastic bonding (LAMP) of AISI304 sheets with polycarbonate sheets is investigated in this work. The process was performed by means of a high power diode laser with a maximum power of 200 W. The study introduces an integrated experimental approach aimed at understanding how the main process conditions (laser power and scanning speed) influence the direct-bonds quality, dimensions and presence of defects. To this end, the bonds dimension, shear strength, formation and dimension of bubbles in the bonded region were related to the temperature measurements and process parameters. According to the achieved results, the processing window that enables a good adhesion of the two materials is relatively small; this is due the activation of the adhesion phenomena that require overcoming an energy threshold. However, excessive energy levels reduce the bonds strength due to the increase in defects (bubbles) dimension that may combine (coalescence) leading to the formation of a central tunnel where the two substrates are completely detached.

  17. GaAs wafer overlay performance affected by annealing heat treatment: II

    Science.gov (United States)

    Liu, Ying; Black, Iain

    2002-07-01

    Further analysis on how wafer distortion affecting the overlay performance during annealing treatment in GaAs wafer fabrication was conducted quantitatively using MONO-LITH software. The experimental results were decomposed as wafer translation, scaling at X and Y direction, rotation and orthogonality. The grid residual was used to describe non- correctable distortion of the wafers, which fits the equations given below: Residual equals Measured - Modeled, which is not a modeled component. The Vector Map displays distribution of error vectors over the wafer or field for various components or overall effect. Based on the component analysis that the misalignment caused by translation and scaling can be compensated by heat treatment if the wafer is placed at a favorable orientation. This can help mitigate the effects of substrate quality in manufactory.

  18. Improved quality control of silicon wafers using novel off-line air pocket image analysis

    Science.gov (United States)

    Valley, John F.; Sanna, M. Cristina

    2014-08-01

    Air pockets (APK) occur randomly in Czochralski (Cz) grown silicon (Si) crystals and may become included in wafers after slicing and polishing. Previously the only APK of interest were those that intersected the front surface of the wafer and therefore directly impacted device yield. However mobile and other electronics have placed new demands on wafers to be internally APK-free for reasons of thermal management and packaging yield. We present a novel, recently patented, APK image processing technique and demonstrate the use of that technique, off-line, to improve quality control during wafer manufacturing.

  19. Wafer of Intel Pentium 4 Prescott Chips

    CERN Multimedia

    Silicon wafer with hundreds of Penryn cores (microprocessor). There are around four times as many Prescott chips can be made per wafer than with the previous generation of Northwood-core Pentium 4 processors. It is faster and cheaper.

  20. 1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2017-05-10

    For photovoltaic (PV) manufacturing to thrive in the U.S., there must be an innovative core to the technology. Project Automate builds on 1366’s proprietary Direct Wafer® kerfless wafer technology and aims to unlock the cost and efficiency advantages of thin kerfless wafers. Direct Wafer is an innovative, U.S.-friendly (efficient, low-labor content) manufacturing process that addresses the main cost barrier limiting silicon PV cost-reductions – the 35-year-old grand challenge of manufacturing quality wafers (40% of the cost of modules) without the cost and waste of sawing. This simple, scalable process will allow 1366 to manufacture “drop-in” replacement wafers for the $10 billion silicon PV wafer market at 50% of the cost, 60% of the capital, and 30% of the electricity of conventional casting and sawing manufacturing processes. This SolarMat project developed the Direct Wafer processes’ unique capability to tailor the shape of wafers to simultaneously make thinner AND stronger wafers (with lower silicon usage) that enable high-efficiency cell architectures. By producing wafers with a unique target geometry including a thick border (which determines handling characteristics) and thin interior regions (which control light capture and electron transport and therefore determine efficiency), 1366 can simultaneously improve quality and lower cost (using less silicon).

  1. Determination of wafer center position during the transfer process by using the beam-breaking method

    Science.gov (United States)

    Chen, Yi-Cheng; Wang, Zhi-Gen; Huang, Bo-Kai

    2014-09-01

    A wafer on a robot blade may slip due to inertia sliding during the acceleration or deceleration process. This study presents the implementation and experimental verification of a novel real-time wafer positioning system to be used during the transfer process. A system-integration computer program involving a human-machine interface (HMI) was also developed, exhibiting the following functions: (a) moving direction judgment; (b) notch-passing judgment; (c) indicating the sensor by which the notch passes; and (d) computing the wafer center in real time. The position of the wafer center is calculated based on the time-sequence of the beam-breaking signals from two optical sensors, and the geometric relations among the sensing points of the robot blade and wafer. When using eight-inch wafers, the experimental results indicated the capabilities of the proposed positioning system under various conditions, including distinct parameters regarding the moving direction, wafer displacement and notch-passing sensors. The accuracy and precision (repeatability) of the measurement in various conditions were calculated and discussed. Furthermore, the experimental results demonstrate that, after combining the novel wafer positioning system and HMI program, the proposed method can be used to compute the position of the wafer center in real time in various conditions.

  2. 三维互连中光刻及晶圆级键合技术的挑战、趋势和解决方案%Challenges, Trends and Solutions for 3D Interconnects in Lithography and Wafer Level Bonding Techniques

    Institute of Scientific and Technical Information of China (English)

    Margarete Zoberbier; Erwin Hell; Kathy Cook; Marc Hennemayer; Dr.-Ing. Barbara Neubert

    2009-01-01

    基于它的技术优势三雏集成技术正在不断地被应用到新的产品中,也包括被应用到消费电子产品里.同时也对许多工艺提出了新的要求,其中也包括光刻和晶圆级键合.三维集成技术还是需要光刻工艺来完成图形的转换,为此,讨论了三维集成工艺对工艺设备和技术提出的挑战.介绍了SUSS公司与三维技术相关的产品.着重讨论与三维集成工艺相关的光刻和键合工艺.描述了三维集成对它们提出的挑战以及目前已有的解决方案和前景.并介绍一款新的具有0.25μm对准精度的接近接触式光刻机.%Technology advances such as 3D Integration are expanding the potential applications of products into mass markets such as consumer electronics. These new technologies are also pushing the envelope of what's currently possible for many production processes, including lithography processes and wafer bonding.There is the need to coat, pattern and etch structures which may have tens or even hundreds of microns in height. This paper will explore some of the lithographic challenges associated with 3D interconnection technology, where use of the vertical dimension has necessitated new methods of conformally coating high topography, new imaging techniques to align various masking levels to the underlying patterns, and new exposure techniques to accomplish high fidelity patterning over such high structures. Wafer bonding techniques as used in the 3D Packaging will be described with all the challenges and available solutions and trends. Furthermore a new Maskalinger technology will be introduced which allows extreme alignment accuracy assisted by pattern recognition down to 0.25 μm.

  3. Comparison of shear bond strength of resin reinforced chemical cure glass ionomer, conventional chemical cure glass ionomer and chemical cure composite resin in direct bonding systems: an in vitro study.

    Science.gov (United States)

    Rao, Kolasani Srinivasa; Reddy, T Praveen Kumar; Yugandhar, Garlapati; Kumar, B Sunil; Reddy, S N Chandrasekhar; Babu, Devatha Ashok

    2013-01-01

    The acid pretreatment and use of composite resins as the bonding medium has disadvantages like scratching and loss of surface enamel, decalcification, etc. To overcome disadvantages of composite resins, glass ionomers and its modifications are being used for bonding. The study was conducted to evaluate the efficiency of resin reinforced glass ionomer as a direct bonding system with conventional glass ionomer cement and composite resin. The study showed that shear bond strength of composite resin has the higher value than both resin reinforced glass ionomer and conventional glass ionomer cement in both 1 and 24 hours duration and it increased from 1 to 24 hours in all groups. The shear bond strength of resin reinforced glass ionomer cement was higher than the conventional glass ionomer cement in both 1 and 24 hours duration. Conditioning with polyacrylic acid improved the bond strength of resin reinforced glass ionomer cement significantly but not statistically significant in the case of conventional glass ionomer cement.

  4. Wafering economies for industrialization from a wafer manufacturer's viewpoint

    Science.gov (United States)

    Rosenfield, T. P.; Fuerst, F. P.

    1982-01-01

    The key technical limitations which inhibit the lowering of value-added costs for state-of-the-art wafering techniques are assessed. From the best experimental results to date, a projection was made to identify those parts of each system which need to be developed in order to meet or improve upon the value-added cost reduction necessary for $0.70/Wp photovoltaics modules.

  5. Clinical comparison between a resin-reinforced self-cured glass ionomer cement and a composite resin for direct bonding of orthodontic brackets. Part 2: Bonding on dry enamel and on enamel soaked with saliva.

    Science.gov (United States)

    Cacciafesta, V; Bosch, C; Melsen, B

    1999-11-01

    The purposes of this investigation were to compare the clinical performance of a resin-reinforced self-cured glass ionomer cement to a standard composite resin in the direct bonding of orthodontic brackets when bonded onto: a) dry teeth and b) teeth soaked with saliva. The two bonding agents were compared using a split-mouth design. In that, both systems were used for direct bonding of stainless steel brackets in every patient. Thirty-eight consecutive patients with fixed appliances were followed for a period of 12 months. The patients were randomly divided into two groups: group A (11 patients) and group B (27 patients). In group A, the performance of 220 stainless steel brackets was evaluated: 110 brackets were bonded with GC Fuji Ortho glass ionomer cement (GC Industrial Co., Tokyo, Japan) onto dry teeth, and 110 bonded with System 1+ composite resin (Ormco Corp., Glendora, CA). In group B, the performance of 540 stainless steel brackets was evaluated: 270 brackets were bonded with GC Fuji Ortho onto teeth soaked with saliva, and 270 bonded with System 1+. In group A, GC Fuji Ortho recorded an overall failure rate (34.5%) significantly higher (p 0.05) between the failure rates of the two bonding agents were found when GC Fuji Ortho was used on teeth soaked with saliva. It was concluded, therefore, that GC Fuji Ortho shows clinically acceptable bond strengths when bonded onto moist teeth, but not when used on dry enamel. Both bonding agents failed mostly at the enamel/adhesive interface, without causing any enamel damage.

  6. Simple and accurate optical height sensor for wafer inspection systems

    Science.gov (United States)

    Shimura, Kei; Nakai, Naoya; Taniguchi, Koichi; Itoh, Masahide

    2016-02-01

    An accurate method for measuring the wafer surface height is required for wafer inspection systems to adjust the focus of inspection optics quickly and precisely. A method for projecting a laser spot onto the wafer surface obliquely and for detecting its image displacement using a one-dimensional position-sensitive detector is known, and a variety of methods have been proposed for improving the accuracy by compensating the measurement error due to the surface patterns. We have developed a simple and accurate method in which an image of a reticle with eight slits is projected on the wafer surface and its reflected image is detected using an image sensor. The surface height is calculated by averaging the coordinates of the images of the slits in both the two directions in the captured image. Pattern-related measurement error was reduced by applying the coordinates averaging to the multiple-slit-projection method. Accuracy of better than 0.35 μm was achieved for a patterned wafer at the reference height and ±0.1 mm from the reference height in a simple configuration.

  7. Temperature Dependent Electrical Properties of PZT Wafer

    Science.gov (United States)

    Basu, T.; Sen, S.; Seal, A.; Sen, A.

    2016-04-01

    The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

  8. Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

    Science.gov (United States)

    Soo, M Teng; Zheng, Kun; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Zou, Jin

    2016-07-13

    Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers.

  9. Direct integration of MEMS, dielectric pumping and cell manipulation with reversibly bonded gecko adhesive microfluidics

    Science.gov (United States)

    Warnat, S.; King, H.; Wasay, A.; Sameoto, D.; Hubbard, T.

    2016-09-01

    We present an approach to form a microfluidic environment on top of MEMS dies using reversibly bonded microfluidics. The reversible polymeric microfluidics moulds bond to the MEMS die using a gecko-inspired gasket architecture. In this study the formed microchannels are demonstrated in conjunction with a MEMS mechanical single cell testing environment for BioMEMS applications. A reversible microfluidics placement technique with an x-y and rotational accuracy of  ±2 µm and 1° respectively on a MEMS die was developed. No leaks were observed during pneumatic pumping of common cell media (PBS, sorbitol, water, seawater) through the fluidic channels. Thermal chevron actuators were successful operated inside this fluidic environment and a performance deviation of ~15% was measured compared to an open MEMS configuration. Latex micro-spheres were pumped using traveling wave di-electrophoresis and compared to an open (no-microfluidics) configuration with velocities of 24 µm s-1 and 20 µm s-1.

  10. Chelation-assisted palladium-catalyzed direct cyanation of 2-arylpyridine C-H bonds.

    Science.gov (United States)

    Jia, Xiaofei; Yang, Dongpeng; Zhang, Shouhui; Cheng, Jiang

    2009-10-15

    A chelation-assisted palladium-catalyzed ortho-cyanation of the sp2 C-H bond by CuCN provided aromatic nitriles in moderate to good yields. Notably, the reaction could be conducted on a 10 mmol scale. The key intermediate of the natural product of Menispermum dauricum DC was concisely synthesized by the procedure. This new approach represents an exceedingly practical method for the synthesis of aromatic nitriles and offers an attractive alternative to the traditional Sandmeyer reaction.

  11. Deposition uniformity inspection in IC wafer surface

    Science.gov (United States)

    Li, W. C.; Lin, Y. T.; Jeng, J. J.; Chang, C. L.

    2014-03-01

    This paper focuses on the task of automatic visual inspection of color uniformity on the surface of integrated circuits (IC) wafers arising from the layering process. The oxide thickness uniformity within a given wafer with a desired target thickness is of great importance for modern semiconductor circuits with small oxide thickness. The non-uniform chemical vapor deposition (CVD) on a wafer surface will proceed to fail testing in Wafer Acceptance Test (WAT). Early detection of non-uniform deposition in a wafer surface can reduce material waste and improve production yields. The fastest and most low-priced inspection method is a machine vision-based inspection system. In this paper, the proposed visual inspection system is based on the color representations which were reflected from wafer surface. The regions of non-uniform deposition present different colors from the uniform background in a wafer surface. The proposed inspection technique first learns the color data via color space transformation from uniform deposition of normal wafer surfaces. The individual small region statistical comparison scheme then proceeds to the testing wafers. Experimental results show that the proposed method can effectively detect the non-uniform deposition regions on the wafer surface. The inspection time of the deposited wafers is quite compatible with the atmospheric pressure CVD time.

  12. Laser-Direct Writing of Silver Metal Electrodes on Transparent Flexible Substrates with High-Bonding Strength.

    Science.gov (United States)

    Zhou, Weiping; Bai, Shi; Ma, Ying; Ma, Delong; Hou, Tingxiu; Shi, Xiaomin; Hu, Anming

    2016-09-21

    We demonstrate a novel approach to rapidly fabricate conductive silver electrodes on transparent flexible substrates with high-bonding strength by laser-direct writing. A new type of silver ink composed of silver nitrate, sodium citrate, and polyvinylpyrrolidone (PVP) was prepared in this work. The role of PVP was elucidated for improving the quality of silver electrodes. Silver nanoparticles and sintered microstructures were simultaneously synthesized and patterned on a substrate using a focused 405 nm continuous wave laser. The writing was completed through the transparent flexible substrate with a programmed 2D scanning sample stage. Silver electrodes fabricated by this approach exhibit a remarkable bonding strength, which can withstand an adhesive tape test at least 50 times. After a 1500 time bending test, the resistance only increased 5.2%. With laser-induced in-situ synthesis, sintering, and simultaneous patterning of silver nanoparticles, this technology is promising for the facile fabrication of conducting electronic devices on flexible substrates.

  13. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

    Science.gov (United States)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-02-11

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  14. Direct measurement and modulation of single-molecule coordinative bonding forces in a transition metal complex

    DEFF Research Database (Denmark)

    Hao, Xian; Zhu, Nan; Gschneidtner, Tina

    2013-01-01

    Coordination chemistry has been a consistently active branch of chemistry since Werner's seminal theory of coordination compounds inaugurated in 1893, with the central focus on transition metal complexes. However, control and measurement of metal-ligand interactions at the single-molecule level...... remain a daunting challenge. Here we demonstrate an interdisciplinary and systematic approach that enables measurement and modulation of the coordinative bonding forces in a transition metal complex. Terpyridine is derived with a thiol linker, facilitating covalent attachment of this ligand on both gold...

  15. Disulphide bond restrains the C-terminal region of thermostable direct hemolysin during folding to promote oligomerization.

    Science.gov (United States)

    Kundu, Nidhi; Tichkule, Swapnil; Pandit, Shashi Bhushan; Chattopadhyay, Kausik

    2017-01-15

    Pore-forming toxins (PFTs) are typically produced as water-soluble monomers, which upon interacting with target cells assemble into transmembrane oligomeric pores. Vibrio parahaemolyticus thermostable direct hemolysin (TDH) is an atypical PFT that exists as a tetramer in solution, prior to membrane binding. The TDH structure highlights a core β-sandwich domain similar to those found in the eukaryotic actinoporin family of PFTs. However, the TDH structure harbors an extended C-terminal region (CTR) that is not documented in the actinoporins. This CTR remains tethered to the β-sandwich domain through an intra-molecular disulphide bond. Part of the CTR is positioned at the inter-protomer interface in the TDH tetramer. Here we show that the truncation, as well as mutation, of the CTR compromise tetrameric assembly, and the membrane-damaging activity of TDH. Our study also reveals that intra-protomer disulphide bond formation during the folding/assembly process of TDH restrains the CTR to mediate its participation in the formation of inter-protomer contact, thus facilitating TDH oligomerization. However, once tetramerization is achieved, disruption of the disulphide bond does not affect oligomeric assembly. Our study provides critical insights regarding the regulation of the oligomerization mechanism of TDH, which has not been previously documented in the PFT family.

  16. Synthetic Molecular Motors: Thermal N Inversion and Directional Photoinduced C=N Bond Rotation of Camphorquinone Imines.

    Science.gov (United States)

    Greb, Lutz; Eichhöfer, Andreas; Lehn, Jean-Marie

    2015-11-23

    The thermal and photochemical E/Z isomerization of camphorquinone-derived imines was studied by a combination of kinetic, structural, and computational methods. The thermal isomerization proceeds by linear N inversion, whereas the photoinduced process occurs through C=N bond rotation with preferred directionality as a result of diastereoisomerism. Thereby, these imines are arguably the simplest example of synthetic molecular motors. The generality of the orthogonal trajectories of the thermal and photochemical pathways allows for the postulation that every suitable chiral imine qualifies, in principle, as a molecular motor driven by light or heat.

  17. Aesthetic Management of Fluoresced Teeth with Ceramic Veneers and Direct Composite Bonding – An Overview and A Case Presentation

    Science.gov (United States)

    Jhajharia, Kapil; Shah, Harsh Haren; Paliwal, Ashutosh; Parikh, Viral

    2015-01-01

    Tooth discolouration is a common problem and affects people of all ages. Apart from the conventional treatment modalities for the same, newer options are available today with better techniques and materials. The present case report describes a 17-year-old girl who had stained and pitted teeth, attributable to dental fluorosis and she desired aesthetic treatment for the same. The pros and cons of all treatment options were carefully weighed and a multistep treatment process involving ceramic veneers and direct bonding were planned. The execution of the planned treatment yielded a good aesthetic and functional outcome. PMID:26266231

  18. Aesthetic Management of Fluoresced Teeth with Ceramic Veneers and Direct Composite Bonding - An Overview and A Case Presentation.

    Science.gov (United States)

    Jhajharia, Kapil; Shah, Harsh Haren; Paliwal, Ashutosh; Parikh, Viral; Patel, Shrikant

    2015-06-01

    Tooth discolouration is a common problem and affects people of all ages. Apart from the conventional treatment modalities for the same, newer options are available today with better techniques and materials. The present case report describes a 17-year-old girl who had stained and pitted teeth, attributable to dental fluorosis and she desired aesthetic treatment for the same. The pros and cons of all treatment options were carefully weighed and a multistep treatment process involving ceramic veneers and direct bonding were planned. The execution of the planned treatment yielded a good aesthetic and functional outcome.

  19. Direct detection by atomic force microscopy of single bond forces associated with the rupture of discrete charge-transfer complexes.

    Science.gov (United States)

    Skulason, Hjalti; Frisbie, C Daniel

    2002-12-18

    Atomic force microscopy (AFM) was used to measure the chemical binding force of discrete electron donor-acceptor complexes formed at the interface between proximal self-assembled monolayers (SAMs). Derivatives of the well-known electron donor N,N,N',N'-tetramethylphenylenediamine (TMPD) and the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) were immobilized on Au-coated AFM tips and substrates by formation of SAMs of N,N,N'-trimethyl-N'-(10-thiodecyl)-1,4-phenylenediamine (I) and bis(10-(2-((2,5-cyclohexadiene-1,4-diylidene)dimalonitrile))decyl) disulfide (II), respectively. Pull-off forces between modified tips and substrates were measured under CHCl(3) solvent. The mean pull-off forces associated with TMPD/TCNQ microcontacts were more than an order of magnitude larger than the pull-off forces for TMPD/TMPD and TCNQ/TCNQ microcontacts, consistent with the presence of specific charge-transfer interactions between proximal TMPD donors and TCNQ acceptors. Furthermore, histograms of pull-off forces for TMPD/TCNQ contacts displayed 70 +/- 15 pN periodicity, assigned to the rupture of individual TMPD-TCNQ donor-acceptor (charge-transfer) complexes. Both the mean pull-off force and the 70 pN force quantum compare favorably with a contact mechanics model that incorporates the effects of discrete chemical bonds, solvent surface tensions, and random contact area variations in consecutive pull-offs. From the 70 pN force quantum, we estimate the single bond energy to be approximately 4-5 kJ/mol, in reasonable agreement with thermodynamic data. These experiments establish that binding forces due to discrete chemical bonds can be detected directly in AFM pull-off measurements employing SAM modified probes and substrates. Because SAMs can be prepared with a wide range of exposed functional groups, pull-off measurements between SAM-coated tips and substrates may provide a general strategy for directly measuring binding forces associated with a variety of simple

  20. High frequency guided wave propagation in monocrystalline silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2017-04-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

  1. Wafer scale oblique angle plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  2. Phase shift reflectometry for wafer inspection

    Science.gov (United States)

    Peng, Kuang; Cao, Yiping; Li, Hongru; Sun, Jianfei; Bourgade, Thomas; Asundi, Anand Krishna

    2015-07-01

    In 3D measurement, specular surfaces can be reconstructed by phase shift reflectometry and the system configuration is simple. In this paper, a wafer is measured for industrial inspection to make sure the quality of the wafer by calibrating, phase unwrapping, slope calculation and integration. The profile result of the whole wafer can be reconstructed and it is a curve. As the height of the structures on the wafer is the target we are interested in, by fitting and subtracting the curve surface, the structures on the wafer can be observed on the flat surface. To confirm the quality farther, a part of the wafer is captured and zoomed in to be detected so that the difference between two structures can be observed better.

  3. Directing Group in Decarboxylative Cross-Coupling: Copper-Catalyzed Site-Selective C-N Bond Formation from Nonactivated Aliphatic Carboxylic Acids.

    Science.gov (United States)

    Liu, Zhao-Jing; Lu, Xi; Wang, Guan; Li, Lei; Jiang, Wei-Tao; Wang, Yu-Dong; Xiao, Bin; Fu, Yao

    2016-08-03

    Copper-catalyzed directed decarboxylative amination of nonactivated aliphatic carboxylic acids is described. This intramolecular C-N bond formation reaction provides efficient access to the synthesis of pyrrolidine and piperidine derivatives as well as the modification of complex natural products. Moreover, this reaction presents excellent site-selectivity in the C-N bond formation step through the use of directing group. Our work can be considered as a big step toward controllable radical decarboxylative carbon-heteroatom cross-coupling.

  4. Anodic bonding using a hybrid electrode with a two-step bonding process

    Science.gov (United States)

    Wei, Luo; Jing, Xie; Yang, Zhang; Chaobo, Li; Yang, Xia

    2012-06-01

    A two-step bonding process using a novel hybrid electrode is presented. The effects of different electrodes on bonding time, bond strength and the bonded interface are analyzed. The anodic bonding is studied using a domestic bonding system, which carries out a detailed analysis of the integrity of the bonded interface and the bond strength measurement. With the aid of the hybrid electrode, a bubble-free anodic bonding process could be accomplished within 15-20 min, with a shear strength in excess of 10 MPa. These results show that the proposed method has a high degree of application value, including in most wafer-level MEMS packaging.

  5. Palladium-catalyzed picolinamide-directed iodination of remote ortho-C−H bonds of arenes: Synthesis of tetrahydroquinolines

    Science.gov (United States)

    Nack, William A; Wang, Xinmou; Wang, Bo

    2016-01-01

    Summary A new palladium-catalyzed picolinamide (PA)-directed ortho-iodination reaction of ε-C(sp2)−H bonds of γ-arylpropylamine substrates is reported. This reaction proceeds selectively with a variety of γ-arylpropylamines bearing strongly electron-donating or withdrawing substituents, complementing our previously reported PA-directed electrophilic aromatic substitution approach to this transformation. As demonstrated herein, a three step sequence of Pd-catalyzed γ-C(sp3)−H arylation, Pd-catalyzed ε-C(sp2)−H iodination, and Cu-catalyzed C−N cyclization enables a streamlined synthesis of tetrahydroquinolines bearing diverse substitution patterns. PMID:27559375

  6. Study of wafer pre-aligning approaches

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Wafer pre-aligning system is an important component in IC manufacturing industry. A wafer prealigning platform with a CCD sensor is presented in this paper. The centering and notch detecting approaches are extended based on this platform. Least square circle fitting approach is adopted to calculate the center and radius of the wafer, and a formula for calculating the fitting error is derived. An approach called edge variation rate is also proposed to detect the range of wafer notch, and the fiducial is calculated by curve fitting approach. These approaches can improve the accuracy effectively as indicated by experiments.

  7. High Speed On-Wafer Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At the High Speed On-Wafer Characterization Laboratory, researchers characterize and model devices operating at terahertz (THz) and millimeter-wave frequencies. The...

  8. High Speed On-Wafer Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At the High Speed On-Wafer Characterization Laboratory, researchers characterize and model devices operating at terahertz (THz) and millimeter-wave frequencies. The...

  9. Self-assembly of alkanethiolates directs sulfur bonding with GaAs(100)

    Science.gov (United States)

    Mancheno-Posso, Pablo; Muscat, Anthony J.

    2017-03-01

    Molecules that contain linear alkane chains self-assemble on a variety of surfaces changing the degree of wetting, lubricity, and reactivity. We report on the reoxidation of GaAs(100) in air after adsorbing five alkanethiols (CnH2n+1-SH where n = 3, 6, 12, 18, 20) and one alkanedithiol (HS-(CH2)8-SH) deposited from the liquid phase. The alignment of the alkane chains forms a self-assembled layer, however, air diffuses readily through the carbon layer and reaches the surface. The impact of alignment is to improve the bonding of sulfur with the surface atoms which reduces the oxidation rate based on fitting the data to a reaction-diffusion model. The layer thickness and molecular density scale linearly with the number of carbon atoms in the alkane chain. The thickness of the alkanethiolate (RS-) layer grows by 0.87 ± 0.06 Å for each C atom in the chain and the surface density by 0.13 ± 0.03 molecule per nm2 per C atom up to a coverage of 5.0 molecules/nm2 for n = 20 or 0.8 monolayer. The surface coverage increases with length because interactions between methylene (CH2) groups in neighboring chains reduce the tilt angle of the molecules with the surface normal. The tight packing yields areas per alkanethiolate as low as 20 Å2 for n = 20. The amount of C in the layer divided by the chain length is approximately constant up to n = 12 but increases sharply by a factor of 2-4× for n = 18 and 20 based on the C 1s X-ray photoelectron spectroscopy (XPS) peak. Fourier transform infrared (FTIR) spectroscopy shows that the asymmetric methylene stretch shifts continuously to lower wavenumber and the relative peak area increases sharply with the length of the alkane chain. Fitting the data to a reaction-diffusion model shows that for times less than 30 min the surface oxide coverage does not depend on the thickness of the self-assembled layer nor the diffusivity of oxygen through the layer. Instead increasing the layer thickness makes more S available for bonding with the

  10. Small footprint wafer-level vacuum packaging using compressible gold sealing rings

    Science.gov (United States)

    Antelius, Mikael; Stemme, Göran; Niklaus, Frank

    2011-08-01

    A novel low-temperature wafer-level vacuum packaging process is presented. The process uses plastically deformed gold rings as sealing structures in combination with flux-free soldering to provide the bond force for a sealing wafer. This process enables the separation of the sealing and the bonding functions both spatially on the wafer and temporally in different process steps, which results in reduced areas for the sealing rings and prevents outgassing from the solder process in the cavity. This enables space savings and yields improvements. We show the experimental result of the hermetic sealing. The leak rate into the packages is determined, by measuring the package lid deformation over 10 months, to be lower than 3.5 × 10-13 mbar l s-1, which is suitable for most MEMS packages. The pressure inside the produced packages is measured to be lower than 10 mbar.

  11. Integratible Process for Fabrication of Fluidic Microduct Networks on a Single Wafer

    Energy Technology Data Exchange (ETDEWEB)

    Matzke, C.M.; Ashby, C.I.; Bridges, M.M.; Griego, L.; Wong, C.C.

    1999-09-07

    We present a microelectronics fabrication compatible process that comprises photolithography and a key room temperature SiON thin film plasma deposition to define and seal a fluidic microduct network. Our single wafer process is independent of thermo-mechanical material properties, particulate cleaning, global flatness, assembly alignment, and glue medium application, which are crucial for wafer fusion bonding or sealing techniques using a glue medium. From our preliminary experiments, we have identified a processing window to fabricate channels on silicon, glass and quartz substrates. Channels with a radius of curvature between 8 and 50 {micro}m, are uniform along channel lengths of several inches and repeatable across the wafer surfaces. To further develop this technology, we have begun characterizing the SiON film properties such as elastic modulus using nanoindentation, and chemical bonding compatibility with other microelectronic materials.

  12. Low-Temperature Silicon-to-Silicon Anodic Bonding Using Sodium-Rich Glass for MEMS Applications

    Science.gov (United States)

    Tiwari, Ruchi; Chandra, Sudhir

    2014-02-01

    In the present work, silicon-to-silicon anodic bonding has been accomplished using an intermediate sodium-rich glass layer deposited by a radiofrequency magnetron sputtering process. The bonding was carried out at low direct-current voltage of about 80 V at 365°C. The alkali ion (sodium) concentration in the deposited film, the surface roughness of the film, and the flatness of the silicon wafers were studied in detail and closely monitored to improve the bond strength of the bonded silicon wafers. The effect of chemical mechanical polishing (CMP) on the surface roughness of the deposited film was also investigated. The average roughness of the deposited film was found to be ~6 Å, being reduced to 2 Å after CMP. It was observed that the concentration of sodium ions in the deposited film varied significantly with the sputtering parameters. Scanning electron microscopy was used to obtain cross-sectional images of the bonded pair. The bonding energy of the bonded wafer pair was measured using the crack-opening method. The bonding energy was found to vary from 0.3 J/m2 to 2.1 J/m2 for different bonding conditions. To demonstrate the application of the process developed, a sealed cavity was created using the silicon-to-silicon anodic bonding technique, which can be used for fabrication of devices such as capacitive pressure sensors and Fabry- Perot-based pressure sensors. Also, a matrix of microwells was fabricated using this technique, which can be used in various biomicroelectromechanical system applications.

  13. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    Science.gov (United States)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  14. On the ultrafast charge migration and subsequent charge directed reactivity in Cl⋯N halogen-bonded clusters following vertical ionization

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, Sankhabrata; Bhattacharya, Atanu, E-mail: atanub@ipc.iisc.ernet.in [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore (India); Periyasamy, Ganga [Department of Chemistry, Central College Campus, Bangalore University, Bangalore (India)

    2015-06-28

    In this article, we have presented ultrafast charge transfer dynamics through halogen bonds following vertical ionization of representative halogen bonded clusters. Subsequent hole directed reactivity of the radical cations of halogen bonded clusters is also discussed. Furthermore, we have examined effect of the halogen bond strength on the electron-electron correlation- and relaxation-driven charge migration in halogen bonded complexes. For this study, we have selected A-Cl (A represents F, OH, CN, NH{sub 2}, CF{sub 3}, and COOH substituents) molecules paired with NH{sub 3} (referred as ACl:NH{sub 3} complex): these complexes exhibit halogen bonds. To the best of our knowledge, this is the first report on purely electron correlation- and relaxation-driven ultrafast (attosecond) charge migration dynamics through halogen bonds. Both density functional theory and complete active space self-consistent field theory with 6-31 + G(d, p) basis set are employed for this work. Upon vertical ionization of NCCl⋯NH{sub 3} complex, the hole is predicted to migrate from the NH{sub 3}-end to the ClCN-end of the NCCl⋯NH{sub 3} complex in approximately 0.5 fs on the D{sub 0} cationic surface. This hole migration leads to structural rearrangement of the halogen bonded complex, yielding hydrogen bonding interaction stronger than the halogen bonding interaction on the same cationic surface. Other halogen bonded complexes, such as H{sub 2}NCl:NH{sub 3}, F{sub 3}CCl:NH{sub 3}, and HOOCCl:NH{sub 3}, exhibit similar charge migration following vertical ionization. On the contrary, FCl:NH{sub 3} and HOCl:NH{sub 3} complexes do not exhibit any charge migration following vertical ionization to the D{sub 0} cation state, pointing to interesting halogen bond strength-dependent charge migration.

  15. The effect of different surface treatments of stainless steel crown and different bonding agents on shear bond strength of direct composite resin veneer

    Directory of Open Access Journals (Sweden)

    Ajami B

    2007-01-01

    Full Text Available Background and Aim: Stainless steel crown (SSC is the most durable and reliable restoration for primary teeth with extensive caries but its metalic appearance has always been a matter of concern. With advances in restorative materials and metal bonding processes, composite veneer has enhanced esthetics of these crowns in clinic. The aim of this study was to evaluate the shear bond strength of SSC to composite resin using different surface treatments and adhesives. Materials and Methods: In this experimental study, 90 stainless steel crowns were selected. They were mounted in molds and divided into 3 groups of 30 each (S, E and F. In group S (sandblast, buccal surfaces were sandblasted for 5 seconds. In group E (etch acidic gel was applied for 5 minutes and in group F (fissure bur surface roughness was created by fissure diamond bur. Each group was divided into 3 subgroups (SB, AB, P based on different adhesives: Single Bond, All Bond2 and Panavia F. Composite was then bonded to specimens. Cases were incubated in 100% humidity at 37°C for 24 hours. Shear bond strength was measured by Zwick machine with crosshead speed of 0.5 mm/min. Data were analyzed by ANOVA test with p0.05 so the two variables were studied separately. No significant difference was observed in mean shear bond strength of composite among the three kinds of adhesives (P>0.05. Similar results were obtained regarding surface treatments (P>0.05. Conclusion: Based on the results of this study, treating the SSC surface with bur and using single bond adhesive and composite can be used successfully to obtain esthetic results in pediatric restorative treatments.

  16. Wafer-level assembly and sealing of a MEMS nanoreactor for in situ microscopy

    NARCIS (Netherlands)

    Mele, L.; Santagata, F.; Panraud, G.; Morana, B.; Tichelaar, F.D.; Creemer, J.F.; Sarro, P.M.

    2010-01-01

    This paper presents a new process for the fabrication of MEMS-based nanoreactors for in situ atomic-scale imaging of nanoparticles under relevant industrial conditions. The fabrication of the device is completed fully at wafer level in an ISO 5 clean room and it is based on silicon fusion bonding

  17. Preparation and Characterization of PZT Wafers

    Science.gov (United States)

    Seal, A.; Rao, B. S. S. Chandra; Kamath, S. V.; Sen, A.; Maiti, H. S.

    2008-07-01

    Piezoelectric materials have recently attracted a lot of attention for ultrasonic structural health monitoring (shm) in aerospace, defence and civilian sectors, where they can act as both actuators and sensors. Incidentally, piezoelectric materials in the form of wafers (pwas-piezoelectric wafer active sensor, approx. 5-10 mm square and 0.2-0.3 mm thickness) are inexpensive, non intrusive and non-resonant wide band devices that can be surface-mounted on existing structures, inserted between the layers of lap joints or embedded inside composite materials. The material of choice for piezoelectric wafers is lead zirconate titanate (PZT) of composition close to morphotropic phase boundary [pb(zr0.52 ti0.48)o3]. However, an excess pbo is normally added to pzt as a densification aid and also to make up for the lead loss during high temperature sintering. Hence, it is of paramount importance to know how the shift of the lead content from the morphotropic composition affects the piezoelectric and mechanical properties of the sintered wafers, keeping in view the importance of mechanical properties of wafers in shm. In the present study, we observed that with the increase in the lead content of the sintered wafers, the dielectric and piezoelectric constants decreased. However, the elastic modulus, hardness and fracture toughness of the wafers increased with increasing lead content in the composition. Hence, the lead content in the sintered wafers should be optimized to get acceptable piezoelectric and mechanical

  18. Methane production using resin-wafer electrodeionization

    Science.gov (United States)

    Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

    2014-03-25

    The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

  19. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... these issues and presents the development leading to applicable technological solutions. The via technology developed in this work enable effective utilization of the available surface area on both sides of the amplifier chip for redistribution as well as placement of passive components and external...... connections. A process for wafer level packaging and assembly of chips with vias is presented in this thesis. Discrete components, capacitors and resistors, are assembled on the backside of the amplifier chips by screen printing of solder paste, pick and place of components, and reflow soldering. Since...

  20. The effect of direct and indirect water storage on the microtensile dentin bond strength of a total-etch and two self-etching adhesives.

    Science.gov (United States)

    Abdalla, Ali I; El Eraki, Magda; Feilzer, Albert J

    2007-12-01

    To evaluate the effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. The adhesive materials were: one total-etch adhesive; Admira Bond and two self-etch adhesives; Clearfil SE Bond and Hybrid Bond. Freshly extracted human third molar teeth were used. In each tooth, a Class I cavity (4 x 4 mm) was prepared in the occlusal surface with the pulpal floor extending approximately 1 mm into dentin. The teeth were divided into three groups (n = 12). Each group was restored with the resin composite Clearfil APX using one of the tested adhesives. For each experimental group three test procedures (n = 10) were carried out: Procedure A: the teeth were stored in water for 24 hours, then sectioned longitudinally, buccolingually and mesiodistally to get rectangular slabs of 1.0 - 1.2 mm thickness on which a microtensile test was carried out; Procedure B: the teeth were also sectioned, however the slabs were stored in water at 37 degrees C for 1 year before microtensile testing; Procedure C: the teeth were kept in water at 37 degrees C for 1 year before sectioning and microtensile testing. During microtensile testing the slabs were placed in a universal testing machine and load was applied at a cross-head speed of 0.5 mm/minute. For the 24-hour water storage groups there was no significant difference in bond strength between the three adhesives. After 1 year of indirect water storage, the bond strength decreased but the reduction was not significantly different from those of 24 hours. After 1 year of direct water storage, the mean bond strengths of Admira Bond and Hybrid Bond were significantly reduced compared to their 24-hour results. In contrast the average value of Clearfil SE Bond was not significantly affected.

  1. Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

    Science.gov (United States)

    Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

    2017-08-01

    Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

  2. Preparation of wafer-level glass cavities by a low-cost chemical foaming process (CFP).

    Science.gov (United States)

    Shang, Jintang; Chen, Boyin; Lin, Wei; Wong, Ching-Ping; Zhang, Di; Xu, Chao; Liu, Junwen; Huang, Qing-An

    2011-04-21

    A novel foaming process-chemical foaming process (CFP)-using foaming agents to fabricate wafer-level micro glass cavities including channels and bubbles was investigated. The process consists of the following steps sequentially: (1) shallow cavities were fabricated by a wet etching on a silicon wafer; (2) powders of a proper foaming agent were placed in a silicon cavity, named 'mother cavity', on the etched silicon surface; (3) the silicon cavities were sealed with a glass wafer by anodic bonding; (4) the bonded wafers were heated to above the softening point of the glass, and baked for several minutes, when the gas released by the decomposition of the foaming agent in the 'mother cavity' went into the other sealed interconnected silicon cavities to foam the softened glass into cylindrical channels named 'daughter channels', or spherical bubbles named 'son bubbles'. Results showed that wafer-level micro glass cavities with smooth wall surfaces were achieved successfully without contamination by the CFP. A model for the CFP was proposed to predict the final shape of the glass cavity. Experimental results corresponded with model predictions. The CFP provides a low-cost avenue to preparation of micro glass cavities of high quality for applications such as micro-reactors, micro total analysis systems (μTAS), analytical and bio-analytical applications, and MEMS packaging.

  3. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, V.L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    1995-01-01

    A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film

  4. Enantioselective Intramolecular Hydroarylation of Alkenes via Directed C-H Bond Activation

    Energy Technology Data Exchange (ETDEWEB)

    Harada, Hitoshi; Thalji, Reema; Bergman, Robert; Ellman, Jonathan

    2008-05-22

    Highly enantioselective catalytic intramolecular ortho-alkylation of aromatic imines containing alkenyl groups tethered at the meta position relative to the imine directing group has been achieved using [RhCl(coe){sub 2}]{sub 2} and chiral phosphoramidite ligands. Cyclization of substrates containing 1,1- and 1,2-disubstituted as well as trisubstituted alkenes were achieved with enantioselectivities >90% ee for each substrate class. Cyclization of substrates with Z-alkene isomers proceeded much more efficiently than substrates with E-alkene isomers. This further enabled the highly stereoselective intramolecular alkylation of certain substrates containing Z/E-alkene mixtures via a Rh-catalyzed alkene isomerization with preferential cyclization of the Z-isomer.

  5. Enantioselective Intramolecular Hydroarylation of Alkenes via Directed C-H Bond Activation

    Energy Technology Data Exchange (ETDEWEB)

    Harada, Hitoshi; Thalji, Reema; Bergman, Robert; Ellman, Jonathan

    2008-05-22

    Highly enantioselective catalytic intramolecular ortho-alkylation of aromatic imines containing alkenyl groups tethered at the meta position relative to the imine directing group has been achieved using [RhCl(coe){sub 2}]{sub 2} and chiral phosphoramidite ligands. Cyclization of substrates containing 1,1- and 1,2-disubstituted as well as trisubstituted alkenes were achieved with enantioselectivities >90% ee for each substrate class. Cyclization of substrates with Z-alkene isomers proceeded much more efficiently than substrates with E-alkene isomers. This further enabled the highly stereoselective intramolecular alkylation of certain substrates containing Z/E-alkene mixtures via a Rh-catalyzed alkene isomerization with preferential cyclization of the Z-isomer.

  6. Wafer-level manufacturing technology of glass microlenses

    Science.gov (United States)

    Gossner, U.; Hoeftmann, T.; Wieland, R.; Hansch, W.

    2014-08-01

    In high-tech products, there is an increasing demand to integrate glass lenses into complex micro systems. Especially in the lighting industry LEDs and laser diodes used for automotive applications require encapsulated micro lenses. To enable low-cost production, manufacturing of micro lenses on wafer level base using a replication technology is a key technology. This requires accurate forming of thousands of lenses with a diameter of 1-2 mm on a 200 mm wafer compliant with mass production. The article will discuss the technical aspects of a lens manufacturing replication process and the challenges, which need to be solved: choice of an appropriate master for replication, thermally robust interlayer coating, choice of replica glass, bonding and separation procedure. A promising approach for the master substrate material is based on a lens structured high-quality glass wafer with high melting point covered by a coating layer of amorphous silicon or germanium. This layer serves as an interlayer for the glass bonding process. Low pressure chemical vapor deposition and plasma enhanced chemical vapor deposition processes allow a deposition of layer coatings with different hydrogen and doping content influencing their chemical and physical behavior. A time reduced molding process using a float glass enables the formation of high quality lenses while preserving the recyclability of the mother substrate. The challenge is the separation of the replica from the master mold. An overview of chemical methods based on optimized etching of coating layer through small channels will be given and the impact of glass etching on surface roughness is discussed.

  7. LiTaO3/Silicon Composite Wafers for the Fabrication of Low Loss Low TCF High Coupling Resonators for Filter Applications

    Science.gov (United States)

    Ballandras, S.; Courjon, E.; Baron, T.; Moulet, J.-B.; Signamarcheix, T.; Daniau, W.

    SAW devices are widely used for radio-frequency (RF) telecommunication filtering and the number of SAW filters, resonators or duplexers is still increasing in RF stage of cellular phones. Therefore, a strong effort is still dedicated to reduce as much as possible their sensitivity to environmental parameter and more specifically to temperature. Bounding processes have been developed at FEMTO-ST and CEA-LETI using either Au/Au or direct bonding techniques for the fabrication of composite wafers combining materials with very different thermoelastic properties, yielding innovative solutions for about-zero temperature coefficient of frequency (TCF) bulk acoustic wave devices. In the present work, this approach has been applied to (YXl)/42∘ lithium tantalate plates, bounded onto (100) silicon wafers and thinned down to 25 μm. The leading idea already explored by other groups as mentioned in introduction consists in impeding the thermal expansion of the piezoelectric material using silicon limited expansion. 2 GHz resonators have been built on such plates and tested electrically and thermally, first by tip probing. A dramatic reduction of the TCF is observed for all the tested devices, allowing to reduce the thermal drift of the resonators down to a few ppm.K-1 within the standard temperature range. We then propose an analysis of the frequency-temperature behavior of the device to improve the resonator design to use these wafers for industrial applications.

  8. Predictive modeling of composite material degradation using piezoelectric wafer sensors electromechanical impedance spectroscopy

    Science.gov (United States)

    Gresil, Matthieu; Yu, Lingyu; Sutton, Mike; Guo, Siming; Pollock, Patrick

    2012-04-01

    The advancement of composite materials in aircraft structures has led to on increased need for effective structural health monitoring (SHM) technologies that are able to detect and assess damage present in composites structures. The work presented in this paper is interested in understanding using self-sensing piezoelectric wafer active sensors (PWAS) to conduct electromechanical impedance spectroscopy (EMIS) in glass fiber reinforced plastic (GFRP) to perform structures health monitoring. PWAS are bonded to the composite material and the EMIS method is used to analyze the changes in the structural resonance and anti-resonance. As the damage progresses in the specimen, the impedance spectrum will change. In addition, multi-physics based finite element method (MP-FEM) is used to model the electromechanical behavior of a free PWAS and its interaction with the host structure on which it is bonded. The MPFEM permits the input and the output variables to be expressed directly in electric terms while the two way electromechanical conversion is done internally in the MP_FEM formulation. To reach the goal of using the EMIS approach to detect damage, several damages models are generated on laminated GFRP structures. The effects of the modeling are carefully studied through experimental validation. A good match has been observed for low and very high frequencies.

  9. Probing and irradiation tests of ALICE pixel chip wafers and sensors

    CERN Document Server

    Cinausero, M; Antinori, F; Chochula, P; Dinapoli, R; Dima, R; Fabris, D; Galet, G; Lunardon, M; Manea, C; Marchini, S; Martini, S; Moretto, S; Pepato, Adriano; Prete, G; Riedler, P; Scarlassara, F; Segato, G F; Soramel, F; Stefanini, G; Turrisi, R; Vannucci, L; Viesti, G

    2004-01-01

    In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICE1LHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results. (6 refs).

  10. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  11. Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock

    Energy Technology Data Exchange (ETDEWEB)

    Degoulange, J.; Trassy, C. [SIMAP UMR CNRS, INP Grenoble (France); Perichaud, I.; Martinuzzi, S. [TECSEN UMR CNRS-University Paul Cezanne-Aix, Marseille III (France)

    2008-10-15

    A solution to the problem of the shortage of silicon feedstock used to grow multicrystalline ingots can be the production of a feedstock obtained by the direct purification of upgraded metallurgical silicon by means of a plasma torch. It is found that the dopant concentrations in the material manufactured following this metallurgical route are in the 10{sup 17} cm{sup -3} range. Minority carrier diffusion lengths L{sub n} are close to 35 {mu}m in the raw wafers and increases up to 120 {mu}m after the wafers go through the standard processing steps needed to make solar cells: phosphorus diffusion, aluminium-silicon alloying and hydrogenation by deposition of a hydrogen-rich silicon nitride layer followed by an annealing. L{sub n} values are limited by the presence of residual metallic impurities, mainly slow diffusers like aluminium, and also by the high doping level. (author)

  12. Modelling deformation and fracture in confectionery wafers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John [Mechanical Engineering Department, Imperial College London, South Kensington, London, SW7 2AZ, United Kingdom and Nestec York Ltd., Nestlé Product Technology Centre, Haxby Road, PO Box 204, York YO91 1XY (United Kingdom)

    2015-01-22

    The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

  13. Silicon Wafer X-ray Mirror Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this one year research project, we propose to do the following four tasks;(1) Design the silicon wafer X-ray mirror demo unit and develop a ray-tracing code to...

  14. ISOTROPIC TEXTURING OF POLYCRYSTALLINE SILICON WAFERS

    Institute of Scientific and Technical Information of China (English)

    L. Wang; H. Shen; Y.F. Hu

    2005-01-01

    An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal etching conditions have been determined by etching rate calculation, scanning electron microscope (SEM) image and reflectance measurement. The surface morphology of the textured wafers varies in accordance with the different etchant concentration which in turn leads to the dissimilarity of etching speed. Textured polycrystalline silicon wafer surfaces display randomly located etched pits which can reduce the surface reflection and enhance the light absorption. The special relationship between reflectivity and etching rate was studied. Reflectance measurements show that isotropic texturing is one of the suitable techniques for texturing polycrystalline silicon wafers and benefits solar cells performances.

  15. Silicon Wafer X-ray Mirror Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this one year research project, we propose to do the following four tasks; (1) Design the silicon wafer X-ray mirror demo unit and develop a ray-tracing code to...

  16. Modelling deformation and fracture in confectionery wafers

    Science.gov (United States)

    Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John

    2015-01-01

    The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

  17. Development of ultra-low impedance Through-wafer Micro-vias

    Energy Technology Data Exchange (ETDEWEB)

    Finkbeiner, F.M. E-mail: fmf@lheapop.gsfc.nasa.gov; Adams, C.; Apodaca, E.; Chervenak, J.A.; Fischer, J.; Doan, N.; Li, M.J.; Stahle, C.K.; Brekosky, R.P.; Bandler, S.R.; Figueroa-Feliciano, E.; Lindeman, M.A.; Kelley, R.L.; Saab, T.; Talley, D.J

    2004-03-11

    Concurrent with our microcalorimeter array fabrication for Constellation-X technology development, we are developing ultra-low impedance Through-Wafer Micro-Vias (TWMV) as electrical interconnects for superconducting circuits. The TWMV will enable the electrical contacts of each detector to be routed to contacts on the backside of the array. There, they can be bump-bonded to a wiring fan-out board which interfaces with the front-end Superconducting Quantum Interference Device readout. We are concentrating our developmental efforts on ultra-low impedance copper and superconducting aluminum TWMV in 300-400 micron thick silicon wafers. For both schemes, a periodic pulse-reverse electroplating process is used to fill or coat micron-scale through-wafer holes of aspect ratios up to 20. Here we discuss the design, fabrication process, and recent electro-mechanical test results of Al and Cu TWMV at room and cryogenic temperatures.

  18. Genesis Ultrapure Water Megasonic Wafer Spin Cleaner

    Science.gov (United States)

    Allton, Judith H.; Stansbery, Eileen K.; Calaway, Michael J.; Rodriquez, Melissa C.

    2013-01-01

    A device removes, with high precision, the majority of surface particle contamination greater than 1-micron-diameter in size from ultrapure semiconductor wafer materials containing implanted solar wind samples returned by NASA's Genesis mission. This cleaning device uses a 1.5-liter/minute flowing stream of heated ultrapure water (UPW) with 1- MHz oscillating megasonic pulse energy focused at 3 to 5 mm away from the wafer surface spinning at 1,000 to 10,000 RPM, depending on sample size. The surface particle contamination is removed by three processes: flowing UPW, megasonic cavitations, and centripetal force from the spinning wafer. The device can also dry the wafer fragment after UPW/megasonic cleaning by continuing to spin the wafer in the cleaning chamber, which is purged with flowing ultrapure nitrogen gas at 65 psi (.448 kPa). The cleaner also uses three types of vacuum chucks that can accommodate all Genesis-flown array fragments in any dimensional shape between 3 and 100 mm in diameter. A sample vacuum chuck, and the manufactured UPW/megasonic nozzle holder, replace the human deficiencies by maintaining a consistent distance between the nozzle and wafer surface as well as allowing for longer cleaning time. The 3- to 5-mm critical distance is important for the ability to remove particles by megasonic cavitations. The increased UPW sonication time and exposure to heated UPW improve the removal of 1- to 5-micron-sized particles.

  19. Stability of laser-propelled wafer satellites

    Science.gov (United States)

    Srinivasan, Prashant; Hughes, Gary B.; Lubin, Philip; Zhang, Qicheng; Madajian, Jonathan; Brashears, Travis; Kulkarni, Neeraj; Cohen, Alexander; Griswold, Janelle

    2016-09-01

    For interstellar missions, directed energy is envisioned to drive wafer-scale spacecraft to relativistic speeds. Spacecraft propulsion is provided by a large array of phase-locked lasers, either in Earth orbit or stationed on the ground. The directed-energy beam is focused on the spacecraft, which includes a reflective sail that propels the craft by reflecting the beam. Fluctuations and asymmetry in the beam will create rotational forces on the sail, so the sail geometry must possess an inherent, passive stabilizing effect. A hyperboloid shape is proposed, since changes in the incident beam angle due to yaw will passively counteract rotational forces. This paper explores passive stability properties of a hyperboloid reflector being bombarded by directed-energy beam. A 2D cross-section is analyzed for stability under simulated asymmetric loads. Passive stabilization is confirmed over a range of asymmetries. Realistic values of radiation pressure magnitude are drawn from the physics of light-mirror interaction. Estimates of beam asymmetry are drawn from optical modeling of a laser array far-field intensity using fixed and stochastic phase perturbations. A 3D multi-physics model is presented, using boundary conditions and forcing terms derived from beam simulations and lightmirror interaction models. The question of optimal sail geometry can be pursued, using concepts developed for the baseline hyperboloid. For example, higher curvature of the hyperboloid increases stability, but reduces effective thrust. A hyperboloid sail could be optimized by seeking the minimum curvature that is stable over the expected range of beam asymmetries.

  20. Synthesis of -C[double bond, length as m-dash]N- linked covalent organic frameworks via the direct condensation of acetals and amines.

    Science.gov (United States)

    Li, Zhi-Jun; Ding, San-Yuan; Xue, Hua-Dong; Cao, Wei; Wang, Wei

    2016-06-01

    We demonstrate herein a facile approach for constructing -C[double bond, length as m-dash]N- linked COFs from acetals. Three new COFs (imine-linked LZU-20, hydrazone-linked LZU-21, and azine-linked LZU-22) were synthesized by the direct condensation of dimethyl acetals and amines. All the synthesized COFs are highly crystalline and exhibit good thermal stability.

  1. Porous solid ion exchange wafer for immobilizing biomolecules

    Science.gov (United States)

    Arora, Michelle B.; Hestekin, Jamie A.; Lin, YuPo J.; St. Martin, Edward J.; Snyder, Seth W.

    2007-12-11

    A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

  2. Influence of Immersion Lithography on Wafer Edge Defectivity

    OpenAIRE

    Jami, K.; Pollentier, I.; Vedula, S; Blumenstock, G

    2010-01-01

    In this paper, we investigated the impact of immersion lithography on wafer edge defectivity. In the past, such work has been limited to inspection of the flat top part of the wafer edge due to the inspection challenges at the curved wafer edge and lack of a comprehensive defect inspection solution. Our study used a new automated edge inspection system that provides full wafer edge imaging and automatic defect classification. The work revealed several key challenges to controlling wafer edge-...

  3. Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology

    Directory of Open Access Journals (Sweden)

    Pooja Batra

    2014-05-01

    Full Text Available For high-volume production of 3D-stacked chips with through-silicon-vias (TSVs, wafer-scale bonding offers lower production cost compared with bump bond technology and is promising for interconnect pitches smaller than 5 µ using available tooling. Prior work has presented wafer-scale integration with tungsten TSV for low-power applications. This paper reports the first use of low-temperature oxide bonding and copper TSV to stack high performance cache cores manufactured in 45 nm Silicon On Insulator-Complementary Metal Oxide Semiconductor (SOI-CMOS embedded DRAM (EDRAM having 12 to 13 copper wiring levels per strata and upto 11000 TSVs at 13 µm pitch for power and signal delivery. The wafers are thinned to 13 µm using grind polish and etch. TSVs are defined post bonding and thinning using conventional alignment techniques. Up to four additional metal levels are formed post bonding and TSV definition. A key feature of this process is its compatibility with the existing high performance POWER7™ EDRAM core requiring neither modification of the existing CMOS fabrication process nor re-design since the TSV RC characteristic is similar to typical 100–200 µm length wiring load enabling 3D macro-to-macro signaling without additional buffering Hardware measurements show no significant impact on device drive and off-current. Functional test at wafer level confirms 2.1 GHz 3D stacked EDRAM operation.

  4. Development of wafers with lowered glycemic index

    Directory of Open Access Journals (Sweden)

    N. N. Popova

    2016-01-01

    Full Text Available The negative impact on an organism is made by lack of culture of food of the population and low physical activity. It leads to violations of carbohydrate and lipidic exchange, development of obesity, diabetes, cardiovascular and other diseases. Relevance of development of foodstuff, in particular – the confectionery promoting decrease in risk of developing of such pathologies is proved. A research objective – development of a compounding of wafers with the lowered glycemic index. As an object of a research the wafers baked in house conditions are chosen. In work various characteristics are analysed (hygroscopicity, a cariogenicity sweet degree, power value, a glicemic index and a glycemic response the sweetening substances, the choice of fructose as sugar substitute for production of wafers with the lowered glycemic index is reasonable. By optimization of a compounding of wafers the amount of sugar was replaced with amount of sweetener, equivalent on sweet. As a result of predesigns the interval of a variation of amount of the fructose entered into a compounding of wafers is established. Further assessment of the indicators of quality forming consumer demand of products – appearance, taste, a smell, existence of a crunch is carried out. Humidity of the received wafers after their production and in the course of storage is also investigated. Decrease in a glycemic index was fixed by amount of glucose in blood. Its measurements saw by means of the glucose meter "on an empty stomach" and after the use of wafers to a complete recovery of level of sugar in blood. The confectionery made on the optimized compounding practically doesn't differ on caloric content from a control sample, and glucose level in blood after their use on about 20% below.

  5. Microstructure and oxidation performance of a –' Pt-aluminide bond coat on directionally solidified superalloy CM-247LC

    Indian Academy of Sciences (India)

    Md Zafir Alam; N Hazari; Dipak K Das

    2014-10-01

    The microstructure of a Pt-modified -' bond coat on CM-247LC Ni-base superalloy has been examined and its cyclic oxidation performance at 1100 °C in air is comparatively evaluated with that of a conventional -(Ni, Pt)Al bond coat. The -' bond coat was effective in imparting oxidation resistance to the CM-247LC alloy for about 100 h, whereas the coating imparted oxidation resistance for significantly longer duration of about 1000 h. The nature of surface damage that occurred to the -' coating during oxidation has been compared with that reported in the case of coating.

  6. Intra-lot wafer by wafer overlay control using integrated and standalone metrology combined sampling

    Science.gov (United States)

    Choi, Young Sin; Nam, Young Sun; Lee, Dong Han; Lee, Jae Il; Kang, Young Seog; Jang, Se Yeon; Kong, Jeong Heung

    2016-03-01

    As overlay margin is getting tighter, traditional overlay correction method is not enough to secure more overlay margin without extended correction potential on lithography tool. Timely, the lithography tool has a capability of wafer to wafer correction. From these well-timed industry's preparations, the uncorrected overlay error from current sampling in a lot could be corrected for yield enhancement. In this paper, overlay budget break was performed prior to experiments with the purpose of estimating amount of overlay improvement. And wafer to wafer correction was simulated to the specified layer of a 2x node DRAM device. As a result, not only maximum 94.4% of residual variation improvement is estimated, but also recognized that more samplings to cover all wafer's behavior is inevitable. Integrated metrology with optimized sampling scheme was also introduced as a supportive method for more samplings.

  7. Full-field wafer warpage measurement technique

    Science.gov (United States)

    Hsieh, H. L.; Lee, J. Y.; Huang, Y. G.; Liang, A. J.; Sun, B. Y.

    2017-06-01

    An innovative moiré technique for full-field wafer warpage measurement is proposed in this study. The wafer warpage measurement technique is developed based on moiré method, Talbot effect, scanning profiling method, stroboscopic, instantaneous phase-shift method, as well as four-step phase shift method, high resolution, high stability and full-field measurement capabilities can be easily achieved. According to the proposed full-field optical configuration, a laser beam is expanded into a collimated beam with a 2-inch diameter and projected onto the wafer surface. The beam is reflected by the wafer surface and forms a moiré fringe image after passing two circular gratings, which is then focused and captured on a CCD camera for computation. The corresponding moiré fringes reflected from the wafer surface are obtained by overlapping the images of the measuring grating and the reference grating. The moiré fringes will shift when wafer warpage occurs. The phase of the moiré fringes will change proportionally to the degree of warpage in the wafer, which can be measured by detecting variations in the phase shift of the moiré fringes in each detection points on the surface of the entire wafer. The phase shift variations of each detection points can be calculated via the instantaneous phase-shift method and the four-step phase-shift method. By adding up the phase shift variations of each detection points along the radii of the circular gratings, the warpage value and surface topography of the wafer can be obtained. Experiments show that the proposed method is capable of obtaining test results similar to that of a commercial sensor, as well as performing accurate measurements under high speed rotation of 1500rpm. As compared to current warpage measurement methods such as the beam optical method, confocal microscopy, laser interferometry, shadow moiré method, and structured light method, this proposed technique has the advantage of full-field measurement, high

  8. Wafer-fused semiconductor radiation detector

    Science.gov (United States)

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  9. Wafer-level vacuum packaging for an optical readout bi-material cantilever infrared FPA

    Science.gov (United States)

    Li, Shuyu; Zhou, Xiaoxiong; Yu, Xiaomei

    2013-12-01

    In this paper, we report the design and fabrication of an uncooled infrared (IR) focal plane array (FPA) on quartz substrate and the wafer-level vacuum packaging for the IR FPA in view of an optical readout method. This FPA is composed of bi-material cantilever array which fabricated by the Micro-Electro Mechanical System (MEMS) technology, and the wafer-level packaging of the IR FPA is realized based on AuSn solder bonding technique. The interface of soldering is observed by scan electron microscope (SEM), which indicates that bonding interface is smooth and with no bubbles. The air leakage rate of packaged FPA is measured to be 1.3×10-9 atm·cc/s.

  10. Self-Assembly of Chip-Size Components with Cavity Structures: High-Precision Alignment and Direct Bonding without Thermal Compression for Hetero Integration

    Directory of Open Access Journals (Sweden)

    Mitsumasa Koyanagi

    2011-02-01

    Full Text Available New surface mounting and packaging technologies, using self-assembly with chips having cavity structures, were investigated for three-dimensional (3D and hetero integration of complementary metal-oxide semiconductors (CMOS and microelectromechanical systems (MEMS. By the surface tension of small droplets of 0.5 wt% hydrogen fluoride (HF aqueous solution, the cavity chips, with a side length of 3 mm, were precisely aligned to hydrophilic bonding regions on the surface of plateaus formed on Si substrates. The plateaus have micro-channels to readily evaporate and fully remove the liquid from the cavities. The average alignment accuracy of the chips with a 1 mm square cavity was found to be 0.4 mm. The alignment accuracy depends, not only on the area of the bonding regions on the substrates and the length of chip periphery without the widths of channels in the plateaus, but also the area wetted by the liquid on the bonding regions. The precisely aligned chips were then directly bonded to the substrates at room temperature without thermal compression, resulting in a high shear bonding strength of more than 10 MPa.

  11. On-wafer high temperature characterization system

    Science.gov (United States)

    Teodorescu, L.; ǎghici, F., Dr; Rusu, I.; Brezeanu, G.

    2016-12-01

    In this work a on-wafer high temperature characterization system for wide bandgap semiconductor devices and circuits has been designed, implemented and tested. The proposed system can perform the wafer temperature adjustment in a large domain, from the room temperature up to 3000C with a resolution better than +/-0.50C. In order to obtain both low-noise measurements and low EMI, the heating element of the wafer chuck is supplied in two ways: one is from a DC linear power supply connected to the mains electricity, another one is from a second DC unit powered by batteries. An original temperature control algorithm, different from classical PID, is used to modify the power applied to the chuck.

  12. Adhesive disbond detection using piezoelectric wafer active sensors

    Science.gov (United States)

    Roth, William; Giurgiutiu, Victor

    2015-04-01

    The aerospace industry continues to increase the use of adhesives for structural bonding due to the increased joint efficiency (reduced weight), even distribution of the load path and decreases in stress concentrations. However, the limited techniques for verifying the strength of adhesive bonds has reduced its use on primary structures and requires an intensive inspection schedule. This paper discusses a potential structural health monitoring (SHM) technique for the detection of disbonds through the in situ inspection of adhesive joints. This is achieved through the use of piezoelectric wafer active sensors (PWAS), thin unobtrusive sensors which are permanently bonded to the aircraft structure. The detection method discussed in this study is electromechanical impedance spectroscopy (EMIS), a local vibration method. This method detects disbonds from the change in the mechanical impedance of the structure surrounding the disbond. This paper will discuss how predictive modeling can provide valuable insight into the inspection method, and provide better results than empirical methods alone. The inspection scheme was evaluated using the finite element method, and the results were verified experimentally using a large aluminum test article, and included both pristine and disbond coupons.

  13. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

    OpenAIRE

    Bo Xie; Yonghao Xing; Yanshuang Wang; Jian Chen; Deyong Chen; Junbo Wang

    2015-01-01

    This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free ...

  14. Wafer level 3-D ICs process technology

    CERN Document Server

    Tan, Chuan Seng; Reif, L Rafael

    2009-01-01

    This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

  15. Wafer-scale graphene integrated circuit.

    Science.gov (United States)

    Lin, Yu-Ming; Valdes-Garcia, Alberto; Han, Shu-Jen; Farmer, Damon B; Meric, Inanc; Sun, Yanning; Wu, Yanqing; Dimitrakopoulos, Christos; Grill, Alfred; Avouris, Phaedon; Jenkins, Keith A

    2011-06-10

    A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.

  16. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    Energy Technology Data Exchange (ETDEWEB)

    Emanuel Sachs

    2013-01-16

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the

  17. Removal of surface oxide from electrical test (E-test) pads using an argon sputter etch procedure to recover TAB wafers

    Science.gov (United States)

    Petersen-Buchheit, Tina A.; Johannes, William R.; Patel, Divyesh N.; Coleman, Jeffrey F.

    1997-09-01

    In Intel's manufacturing flow, discrete devices in the scribeline of wafers are tested (E-Test structures) to determine if they meet specifications for reliability and functionality. The wafers are then sorted to determine die functionality. Probing equipment is used to measure E-test structures by way of aluminum pads (E-Test pads) which make contact with devices in the scribeline. Tape automated bonding packaging requires additional processing (compared to Wire Bonded devices) to plate gold bumps on to the die bond pads. The gold bumps are not plated on the E-Test pads but they receive additional processing which may create an insulating surface layer, such as aluminum oxide, preventing the acquisition of reliability information from the wafer tested. If reliability data is not available, wafers are discarded even though the die present on the wafer may be functional. An argon sputter etch procedure is suggested to remove the problematic insulating oxide and recover wafers. The major concerns associated with using a sputter etch recovery procedure include: redistribution of gold across the surface of the wafer; gate charging due to the sputter process; polyimide (PI) surface roughness and thickness issues; encapsulation adhesion issues; and elevated burn-in fallout. This paper will discuss the procedure used to remove surface oxide and experiments to determine if recovery was successful. Process characterization which encompassed etch time and RF power were used to optimize the recovery procedure for reliability purposes. The experimental parameters evaluated include: E-Test parametric data to compare recovered wafers to baseline wafers; threshold voltage data; pad to pad surface leakage due to gold redistribution; SEM cross sections and profilometry to ensure PI integrity; and C-mode Scanning Acoustic Microscopy to address encapsulation adhesion concerns.

  18. Fabrication of High Aspect Ratio Through-Wafer Vias in CMOS Wafers for 3-D Packaging Applications

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel; Frech, J.; Heschel, M.

    2003-01-01

    A process for fabrication of through-wafer vias in CMOS wafers is presented. The process presented offers simple and well controlled fabrication of through-wafer vias using DRIE formation of wafer through-holes, low temperature deposition of through-hole insulation, doubled sided sputtering of Cr....../Au, and electroless deposition of Cu. A novel characteristic of the process is the use of a metal etch stop layer providing perfect control of the etch profile of the wafer through-holes in combination with a remarkably improved etch uniformity across the wafer. Excellent through-hole insulation is provided through...

  19. A new self-curing resin-modified glass-ionomer cement for the direct bonding of orthodontic brackets in vivo.

    Science.gov (United States)

    Fricker, J P

    1998-04-01

    A new self-curing (chemically cured) resin-modified glass-ionomer cement, Fuji Ortho (GC International), is based on the technology of hybrid glass-ionomer restorative materials and features chemical adhesion to tooth structure and long-term fluoride release. This article describes a 12-month clinical evaluation of Fuji Ortho for the direct bonding of orthodontic (metal) brackets with System 1+ (Ormco Corp.) as a control. Three failures of Fuji Ortho occurred from a sample of 60 (5%), with five failures of the composite resin from a sample of 60 (8.3%). No statistical significance was seen between these results. Fuji Ortho is a satisfactory adhesive for the direct bonding of orthodontic brackets where there are no occlusal interferences.

  20. Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate

    Science.gov (United States)

    Matsumoto, Keiichi; Zhang, Xinxin; Kishikawa, Junya; Shimomura, Kazuhiko

    2015-03-01

    Current-injected light emission was confirmed for metal organic vapor phase epitaxy (MOVPE) grown (Ga)InAs/InP quantum dots (QDs) on directly bonded InP/Si substrate. The InP/Si substrate was prepared by directly bonding of InP thin film and a Si substrate using a wet-etching and annealing process. A p-i-n LED structure including Stranski-Krastanov (Ga)InAs/InP QDs was grown by MOVPE on an InP/Si substrate. No debonding between Si substrate and InP layer was observed, even after MOVPE growth and operation of the device under continuous wave conditions at RT. The photoluminescence, current/voltage, and electroluminescence characteristics of the device grown on the InP/Si substrate were compared with reference grown on an InP substrate.

  1. Solar wafer market in a crisis; Ausgeduennt

    Energy Technology Data Exchange (ETDEWEB)

    Heup, Juergen

    2010-07-15

    After a boom period in which producers of silicon wafers were hailed for reducing the cost of solar modules, the market is now undergoing a period of stress, and some producers were unable to continue. The contribution presents an example to show how the industry can be saved. (orig.)

  2. Optimal Wafer Cutting in Shuttle Layout Problems

    DEFF Research Database (Denmark)

    Nisted, Lasse; Pisinger, David; Altman, Avri

    2011-01-01

    A major cost in semiconductor manufacturing is the generation of photo masks which are used to produce the dies. When producing smaller series of chips it can be advantageous to build a shuttle mask (or multi-project wafer) to share the startup costs by placing different dies on the same mask...

  3. Wafer-Scale Integration of Systolic Arrays,

    Science.gov (United States)

    1985-10-01

    wafer-scale system, however, all the nearest neighbors of a processor may be dead, and thus the prime advantage of adopting a systolic array...work, however. To the best of our knowledge, the only result of a similar nature is due to Erdos and Renyi 15] who showed that most graphs with N

  4. Tomographic Evaluation of Reparative Dentin Formation after Direct Pulp Capping with Ca(OH)2, MTA, Biodentine, and Dentin Bonding System in Human Teeth.

    Science.gov (United States)

    Nowicka, Alicja; Wilk, Grażyna; Lipski, Mariusz; Kołecki, Janusz; Buczkowska-Radlińska, Jadwiga

    2015-08-01

    New materials can increase the efficiency of pulp capping through the formation of a complete reparative dentin bridge with no toxic effects. The present study involved tomographic evaluations of reparative dentin bridge formation after direct pulp capping with calcium hydroxide, mineral trioxide aggregate (MTA), Biodentine (Septodont, Saint Maur des Fossés, France), and Single Bond Universal (3M ESPE, Seefeld, Germany) in human teeth. Forty-four caries-free, intact, human third molars scheduled for extraction were subjected to mechanical pulp exposure and assigned to 1 of 4 experimental groups depending on the pulp capping agent used: calcium hydroxide, MTA, Biodentine, or Single Bond Universal. After 6 weeks, the teeth were extracted and processed for cone-beam computed tomographic imaging and histologic examination. Tomographic data, including the density and volume of formed reparative dentin bridges, were evaluated using a scoring system. The reparative dentin formed in the calcium hydroxide, MTA, and Biodentine groups was significantly superior to that formed in the Single Bond Universal group in terms of thickness and volume. The dentin bridges in the Biodentine group showed the highest average and maximum volumes. The mean density of dentin bridges was the highest in the MTA group and the lowest in the Single Bond Universal group. The volume of reparative dentin bridges formed after direct pulp capping is dependent on the material used. Biodentine and MTA resulted in the formation of bridges with a significantly higher average volume compared with Single Bond Universal, and cone-beam computed tomographic imaging allowed for the identification of the location of dentin bridges. Copyright © 2015 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  5. 100% foundry compatible packaging and full wafer release and die separation technique for surface micromachined devices

    Energy Technology Data Exchange (ETDEWEB)

    OLIVER,ANDREW D.; MATZKE,CAROLYN M.

    2000-04-06

    A completely foundry compatible chip-scale package for surface micromachines has been successfully demonstrated. A pyrex (Corning 7740) glass cover is placed over the released surface micromachined die and anodically bonded to a planarized polysilicon bonding ring. Electrical feedthroughs for the surface micromachine pass underneath the polysilicon sealing ring. The package has been found to be hermetic with a leak rate of less than 5 x 10{sup {minus}8} atm cm{sup {minus}3}/s. This technology has applications in the areas of hermetic encapsulation and wafer level release and die separation.

  6. Low-cost silicon wafer dicing using a craft cutter

    KAUST Repository

    Fan, Yiqiang

    2014-05-20

    This paper reports a low-cost silicon wafer dicing technique using a commercial craft cutter. The 4-inch silicon wafers were scribed using a crafter cutter with a mounted diamond blade. The pre-programmed automated process can reach a minimum die feature of 3 mm by 3 mm. We performed this scribing process on the top polished surface of a silicon wafer; we also created a scribing method for the back-unpolished surface in order to protect the structures on the wafer during scribing. Compared with other wafer dicing methods, our proposed dicing technique is extremely low cost (lower than $1,000), and suitable for silicon wafer dicing in microelectromechanical or microfluidic fields, which usually have a relatively large die dimension. The proposed dicing technique is also usable for dicing multiple project wafers, a process where dies of different dimensions are diced on the same wafer.

  7. Laser-induced subsurface modification of silicon wafers

    NARCIS (Netherlands)

    Verburg, P.C.

    2015-01-01

    Wafer dicing is the technology to separate wafers into divided components known as dies. New developments in the semiconductor industry, such as die stacking and the development of microelectromechanical systems, present significant challenges to the dicing process. A promising wafer dicing method

  8. H-bonding-directed self-assembly of synthetic copolymers containing nucleobases: organization and colloidal fusion in a noncompetitive solvent.

    Science.gov (United States)

    Lutz, Jean-François; Pfeifer, Sebastian; Chanana, Munish; Thünemann, Andreas F; Bienert, Ralf

    2006-08-15

    The self-organization of random copolymers composed of a nucleobase monomer (either 1-(4-vinylbenzyl)thymine or 9-(4-vinylbenzyl)adenine) and dodecyl methacrylate (DMA) was studied in dilute chloroform solutions. The balance between the molar fractions of the nucleobase monomer (leading to intermolecular H-bonding) and DMA (soluble moiety in chloroform) in the polymer chains was found to be the parameter that principally influences the self-organization. DMA-rich copolymers are molecularly soluble in chloroform, whereas nucleobase-rich copolymers are insoluble in this solvent. Copolymers possessing an equimolar comonomer composition self-assemble into micrometer-sized particles physically cross-linked by intermolecular H-bonds (either thymine-thymine or adenine-adenine interactions, depending on the studied copolymer). Nevertheless, when mixed together, thymine- and adenine-based colloids fuse into thermodynamically stable microspheres cross linked by adenine-thymine interactions.

  9. Direct space decomposition of ELI-D: interplay of charge density and pair-volume function for different bonding situations.

    Science.gov (United States)

    Wagner, Frank R; Kohout, Miroslav; Grin, Yuri

    2008-10-01

    The topological features, i.e., gradients and curvatures of the same-spin electron pair restricted electron localizability indicator (ELI-D) in position space are analyzed in terms of those of the electron density and the pair-volume function. The analysis of the topology of these constituent functions and their interplay on ELI-D attractor formation for a number of molecules representing chemically different bonding situations allows distinguishing between different chemical bonding scenarios on a quantum mechanical basis without the recourse to orbitals. The occurrence of the Laplacian of the electron density in the expression for the Laplacian of ELI-D allows us to establish a physical link between electron localizability and electron pairing as displayed by ELI-D and the role of Laplacian of the density in this context.

  10. Anodically bonded submicron microfluidic chambers.

    Science.gov (United States)

    Dimov, S; Bennett, R G; Córcoles, A; Levitin, L V; Ilic, B; Verbridge, S S; Saunders, J; Casey, A; Parpia, J M

    2010-01-01

    We demonstrate the use of anodic bonding to fabricate cells with characteristic size as large as 7 x 10 mm(2), with height of approximately 640 nm, and without any internal support structure. The cells were fabricated from Hoya SD-2 glass and silicon wafers, each with 3 mm thickness to maintain dimensional stability under internal pressure. Bonding was carried out at 350 degrees C and 450 V with an electrode structure that excluded the electric field from the open region. We detail fabrication and characterization steps and also discuss the design of the fill line for access to the cavity.

  11. Anodically bonded submicron microfluidic chambers

    Science.gov (United States)

    Dimov, S.; Bennett, R. G.; Córcoles, A.; Levitin, L. V.; Ilic, B.; Verbridge, S. S.; Saunders, J.; Casey, A.; Parpia, J. M.

    2010-01-01

    We demonstrate the use of anodic bonding to fabricate cells with characteristic size as large as 7×10 mm2, with height of ≈640 nm, and without any internal support structure. The cells were fabricated from Hoya SD-2 glass and silicon wafers, each with 3 mm thickness to maintain dimensional stability under internal pressure. Bonding was carried out at 350 °C and 450 V with an electrode structure that excluded the electric field from the open region. We detail fabrication and characterization steps and also discuss the design of the fill line for access to the cavity.

  12. Size of silicon strip sensor from 6 inch wafer (right) compared to that from a 4 inch wafer (left).

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Silicon strip sensors made from 6 inch wafers will allow for much larger surface area coverage at a reduced cost per unit surface area. A prototype sensor of size 8cm x 11cm made by Hamamatsu from a 6 inch wafer is shown next to a traditional 6cm x 6cm sensor from a 4 inch wafer.

  13. Carboxylic acid functionalized ortho-linked oxacalix[2]benzene[2]pyrazine: synthesis, structure, hydrogen bond and metal directed self-assembly.

    Science.gov (United States)

    Kong, Ling-Wei; Ma, Ming-Liang; Wu, Liang-Chun; Zhao, Xiao-Li; Guo, Fang; Jiang, Biao; Wen, Ke

    2012-05-14

    Cyclooligomerization of 2,6-dichloropyrazine 4 and benzyl 2,3-dihydroxybenzoate 5 under microwave irradiation resulted in a racemic pair of ester functionalized ortho-linked oxacalix[2]benzene[2]pyrazine 6, which was further transformed to the corresponding racemic carboxylic acid functionalized ortho-linked oxacalix[2]benzene[2]pyrazine 3. Both enantiomers of 3 adopt 1,3-alternate conformations with their two carboxylic acid groups pointing to opposite directions in the solid state. Enantiomers of 3 form a step-like one-dimensional supramolecular polymer via intermolecular hydrogen bond interactions between the carboxylic acids for crystals obtained in methanol. No hydrogen bonds were formed between the carboxylic acids for crystals of 3 obtained in pyridine and aqueous guanidine solutions; instead, intermolecular hydrogen bonds between the carboxylic acid groups of 3 and pyridine, as well as guanidinium ions were formed. Under metal-mediated self-assembly conditions, the pyrazinyl nitrogen atoms in 3 interacted with transition metal ions, such as Ag(I), Cu(II) and Zn(II), and resulted in the formation of four new metal-containing supramolecular complexes. Metallomacrocycles 7, 8 and 9 were formed by reactions of 3 with Ag(I) or Cu(II) ions by bridging two ligands 3 in the equatorial region via M-N coordination bonds. A one-dimensional coordination polymer 10 was generated by reaction between ligand 3 and Zn(II) ions, and a cage-based structure is presented in 10 by bridging of the cyclophane units by Zn(2+) ions via Zn-N and Zn-O bonds.

  14. Strength and leak testing of plasma activated bonded interfaces

    DEFF Research Database (Denmark)

    Visser, M.M.; Weichel, Steen; Reus, Roger De

    2002-01-01

    Bond strength and hermeticity of plasma activated bonded (PAB) Si-Si interfaces are reported. Bonding of 100 mm Si(1 0 0) wafers was performed. An average bond strength of 9.0+/-3.9 MPa was achieved without performing any annealing steps. Cavities bonded in vacuum were found to be hermetic based...... on detection of changes in membrane deflections. The detection limit for leak was 8E-13 mbar l/s. For comparison, strength and leak tests were also performed with regular fusion bonded wafers annealed at 1100 degreesC. The PAB was found to withstand post-processing steps such as RCA cleaning, 24 h in de......-ionised water (DIW), 24 h in 2.5% HF, 24 h in acetone and 60 s in a resist developer. By analysing the thin silicon oxide present on the surfaces to be bonded with optical methods, the influence of pre-cleaning and activation process parameters was investigated....

  15. Artificial solid electrolyte interphase with in-situ formed porosity for enhancing lithiation of silicon wafer

    Science.gov (United States)

    Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

    2016-12-01

    In order to utilize silicon wafer as electrode and substrate for integrated lithium-ion batteries, a composite film with in-situ formed porosity (lithium phosphorous oxynitride/tin oxide, LiPON/SnO2) is fabricated and directly exploited as the artificial solid electrolyte interphase film. Without the compromise of Coulombic efficiency, the capacity and cycle performance of silicon wafer are both developed, resulting from the reduced resistance and the dynamically stable coating. This work provides guidance to enhance the lithiation of bulk silicon, and the strategy of surface modification can be applied to other advanced materials or fields.

  16. Feature profile evolution in plasma processing using on-wafer monitoring system

    CERN Document Server

    Samukawa, Seiji

    2014-01-01

    This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

  17. Thermal modeling of wafer-based precision glass molding process

    Science.gov (United States)

    Hu, Yang; Shen, Lianguan; Zhou, Jian; Li, Mujun

    2016-10-01

    Wafer based precision glass optics manufacturing has been an innovative approach for combining high accuracy with mass production. However, due to the small ratio of thickness and diameter of the glass wafer, deformation and residual stress would be induced for the nonuniform temperature distribution in the glass wafer after molding. Therefore, thermal modelling of the heating system in the wafer based precision glass molding (PGM) process is of great importance in optimizing the heating system and the technique of the process. The current paper deals with a transient thermal modelling of a self-developed heating system for wafer based PGM process. First, in order to investigate the effect of radiation from the surface and interior of the glass wafer, the thermal modeling is simulated with a discrete ordinates radiation model in the CFD software FLUENT. Temperature distribution of the glass wafer obtained from the simulations is then used to evaluate the performance of heating system and investigate some importance parameters in the model, such as interior and surface radiation in glass wafer, thermal contact conductance between glass wafer and molds, thickness to diameter ratio of glass wafer. Finally, structure modification in the molding chamber is raised to decrease the temperature gradient in the glass wafer and the effect is significant.

  18. Wafer level test solutions for IR sensors

    Science.gov (United States)

    Giessmann, Sebastian; Werner, Frank-Michael

    2014-05-01

    Wafer probers provide an established platform for performing electrical measurements at wafer level for CMOS and similar process technologies. For testing IR sensors, the requirements are beyond the standard prober capabilities. This presentation will give an overview about state of the art IR sensor probing systems reaching from flexible engineering solutions to automated production needs. Cooled sensors typically need to be tested at a target temperature below 80 K. Not only is the device temperature important but also the surrounding environment is required to prevent background radiation from reaching the device under test. To achieve that, a cryogenic shield is protecting the movable chuck. By operating that shield to attract residual gases inside the chamber, a completely contamination-free test environment can be guaranteed. The use of special black coatings are furthermore supporting the removal of stray light. Typically, probe card needles are operating at ambient (room) temperature when connecting to the wafer. To avoid the entrance of heat, which can result in distorted measurements, the probe card is fully embedded into the cryogenic shield. A shutter system, located above the probe field, is designed to switch between the microscope view to align the sensor under the needles and the test relevant setup. This includes a completely closed position to take dark current measurements. Another position holds a possible filter glass with the required aperture opening. The necessary infrared sources to stimulate the device are located above.

  19. Wafer weak point detection based on aerial images or WLCD

    Science.gov (United States)

    Ning, Guoxiang; Philipp, Peter; Litt, Lloyd C.; Ackmann, Paul; Crell, Christian; Chen, Norman

    2015-10-01

    Aerial image measurement is a key technique for model based optical proximity correction (OPC) verification. Actual aerial images obtained by AIMS (aerial image measurement system) or WLCD (wafer level critical dimension) can detect printed wafer weak point structures in advance of wafer exposure and defect inspection. Normally, the potential wafer weak points are determined based on optical rule check (ORC) simulation in advance. However, the correlation to real wafer weak points is often not perfect due to the contribution of mask three dimension (M3D) effects, actual mask errors, and scanner lens effects. If the design weak points can accurately be detected in advance, it will reduce the wafer fab cost and improve cycle time. WLCD or AIMS tools are able to measure the aerial images CD and bossung curve through focus window. However, it is difficult to detect the wafer weak point in advance without defining selection criteria. In this study, wafer weak points sensitive to mask mean-to-nominal values are characterized for a process with very high MEEF (normally more than 4). Aerial image CD uses fixed threshold to detect the wafer weak points. By using WLCD through threshold and focus window, the efficiency of wafer weak point detection is also demonstrated. A novel method using contrast range evaluation is shown in the paper. Use of the slope of aerial images for more accurate detection of the wafer weak points using WLCD is also discussed. The contrast range can also be used to detect the wafer weak points in advance. Further, since the mean to nominal of the reticle contributes to the effective contrast range in a high MEEF area this work shows that control of the mask error is critical for high MEEF layers such as poly, active and metal layers. Wafer process based weak points that cannot be detected by wafer lithography CD or WLCD will be discussed.

  20. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...... specific. Often fusion bonding of silicon nitride surfaces to silicon or silicon dioxide to silicon surfaces is preferred, though Si3N4–Si3N4 bonding is indeed possible and practical for many devices as will be shown in this paper. We present an overview of existing knowledge on Si3N4–Si3N4 bonding and new...... results on bonding of thin and thick Si3N4 layers. The new results include high temperature bonding without any pretreatment, along with improved bonding ability achieved by thermal oxidation and chemical pretreatment. The bonded wafers include both unprocessed and processed wafers with a total silicon...

  1. A general strategy for organocatalytic activation of C-H bonds via photoredox catalysis: direct arylation of benzylic ethers.

    Science.gov (United States)

    Qvortrup, Katrine; Rankic, Danica A; MacMillan, David W C

    2014-01-15

    Direct C-H functionalization and arylation of benzyl ethers has been accomplished via photoredox organocatalysis. The productive merger of a thiol catalyst and a commercially available iridium photoredox catalyst in the presence of household light directly affords benzylic arylation products in good to excellent yield. The utility of this methodology is further demonstrated in direct arylation of 2,5-dihydrofuran to form a single regioisomer.

  2. Nitriles as directionally tolerant hydrogen bond acceptors: IR-UV ion depletion spectroscopy of benzenepropanenitrile and its hydrate clusters

    Science.gov (United States)

    Robertson, Patrick A.; Lobo, Isabella A.; Wilson, David J. D.; Robertson, Evan G.

    2016-09-01

    Benzenepropanenitrile (BPN) and its hydrate clusters are studied by R2PI and IR-UV ion-depletion spectroscopy in the CH/OH stretch regions, aided by theoretical calculations. A single water molecule binds to the terminal nitrile 'lone-pair' of the anti-BPN host, but there is also evidence for a side-type structure with OH donating to the nitrile π-electrons. In the gauche-BPN cluster, water is located at an intermediate angle that facilitates O⋯HC(ortho) interaction. A wide range of attachment angles is possible, as the intrinsic preference for linear hydrogen bonding is mediated by additional CH⋯O interactions that depend on molecular geometry near the nitrile group.

  3. H-Bonding Self-assembled Template-directed Synthesis of a Reactive Amide-bridged Ladder Polyvinylsiloxane

    Institute of Scientific and Technical Information of China (English)

    You Zhi WAN; Ying Hua LIU; Ping XIE; Rong Ben ZHANG

    2006-01-01

    A novel, reactive amide-bridged ladder polyvinylsiloxane (abbr. LP) with Mn = 2.4×104was synthesized for the first time by means of aryl amide H-bonding self-assembled template.The regularity of LP was characterized by the XRD, 29Si NMR and DSC methods. XRD analysis demonstrated the ladder width w = 9.09 A and the ladder thickness t = 3.89 A, respectively, which are approximately consistent with the molecular simulation-calculated ones: w'= 10.60 A and t'=3.06 A. 29Si NMR displayed a resonance peak with small half peak width, △1/2 ~ 4 ppm, for the moiety [=Si(Vi)O2/2-]n of LP. Besides, as a collateral evidence, DSC measurement revealed a high glass transition temperature Tg = 225℃, suggesting high stiffness of the ladder main chain of LP.

  4. Experimental dental bio-adhesives for direct restorations: the influence of PMnEDM homologs structure on bond strength.

    Science.gov (United States)

    Kupka, Tomasz W; Gibas, Mirosław; Dabrowska, Agnieszka; Tanasiewicz, Marta; Malec, Witold

    2007-10-01

    The purpose of this study was to evaluate the effect of PMnEDM dental monomer homologs chemical structure on shear bond strength between polymer-based composite and alloy. Four light-cured experimental universal dental bio-adhesives (group codes: A (PMDM), B (PM2EDM), C (PM3EDM), D (PM4EDM)) were preliminarily evaluated with respect to sensitivity to ambient light, curing time, depth of cure, and uncured film thickness according to standardized procedures. Appropriate tests were performed to measure shear bond strength (SBS) of polymer-based composite to cobalt-based alloy with the use of the adhesives investigated. Variability of results was evaluated by use of the coefficient of variation (CV). Results were estimated with the aid of one-way analysis of variance (ANOVA), performed on the logarithmic values, with alpha=0.05 significance level. All materials passed the requirements according to physicochemical properties. Except for formulation D, all results estimating SBS were positive with respect to standardized requirements. The uppermost mean SBS was achieved for the A adhesive (11.45 MPa) and appeared to be significantly different compared to D one (5.07 MPa) (p=0.0495). Also the B adhesive, having slightly lower mean SBS value (10.50 MPa) exhibited a significant difference in respect to D one (p=0.0455). The means for other trial pairs did not differ statistically. The materials here studied might be considered to have a practical use in dental clinics, especially the formulations B and C.

  5. Troponate/Aminotroponate Ruthenium-Arene Complexes: Synthesis, Structure, and Ligand-Tuned Mechanistic Pathway for Direct C-H Bond Arylation with Aryl Chlorides in Water.

    Science.gov (United States)

    Dwivedi, Ambikesh D; Binnani, Chinky; Tyagi, Deepika; Rawat, Kuber S; Li, Pei-Zhou; Zhao, Yanli; Mobin, Shaikh M; Pathak, Biswarup; Singh, Sanjay K

    2016-07-05

    A series of water-soluble troponate/aminotroponate ruthenium(II)-arene complexes were synthesized, where O,O and N,O chelating troponate/aminotroponate ligands stabilized the piano-stool mononuclear ruthenium-arene complexes. Structural identities for two of the representating complexes were also established by single-crystal X-ray diffraction studies. These newly synthesized troponate/aminotroponate ruthenium-arene complexes enable efficient C-H bond arylation of arylpyridine in water. The unique structure-activity relationship in these complexes is the key to achieve efficient direct C-H bond arylation of arylpyridine. Moreover, the steric bulkiness of the carboxylate additives systematically directs the selectivity toward mono- versus diarylation of arylpyridines. Detailed mechanistic studies were performed using mass-spectral studies including identification of several key cyclometalated intermediates. These studies provided strong support for an initial cycloruthenation driven by carbonate-assisted deprotonation of 2-phenylpyridine, where the relative strength of η(6)-arene and the troponate/aminotroponate ligand drives the formation of cyclometalated 2-phenylpyridine Ru-arene species, [(η(6)-arene)Ru(κ(2)-C,N-phenylpyridine) (OH2)](+) by elimination of troponate/aminotroponate ligands and retaining η(6)-arene, while cyclometalated 2-phenylpyridine Ru-troponate/aminotroponate species [(κ (2)-troponate/aminotroponate)Ru(κ(2)-C,N-phenylpyridine)(OH2)2] was generated by decoordination of η(6)-arene ring during initial C-H bond activation of 2-phenylpyridine. Along with the experimental mass-spectral evidence, density functional theory calculation also supports the formation of such species for these complexes. Subsequently, these cycloruthenated products activate aryl chloride by facile oxidative addition to generate C-H arylated products.

  6. Direct functionalization of M-C (M = Pt(II), Pd(II)) bonds using environmentally benign oxidants, O2 and H2O2.

    Science.gov (United States)

    Vedernikov, Andrei N

    2012-06-19

    Atom economy and the use of "green" reagents in organic oxidation, including oxidation of hydrocarbons, remain challenges for organic synthesis. Solutions to this problem would lead to a more sustainable economy because of improved access to energy resources such as natural gas. Although natural gas is still abundant, about a third of methane extracted in distant oil fields currently cannot be used as a chemical feedstock because of a dearth of economically and ecologically viable methodologies for partial methane oxidation. Two readily available "atom-economical" "green" oxidants are dioxygen and hydrogen peroxide, but few methodologies have utilized these oxidants effectively in selective organic transformations. Hydrocarbon oxidation and C-H functionalization reactions rely on Pd(II) and Pt(II) complexes. These reagents have practical advantages because they can tolerate moisture and atmospheric oxygen. But this tolerance for atmospheric oxygen also makes it challenging to develop novel organometallic palladium and platinum-catalyzed C-H oxidation reactions utilizing O(2) or H(2)O(2). This Account focuses on these challenges: the development of M-C bond (M = Pt(II), Pd(II)) functionalization and related selective hydrocarbon C-H oxidations with O(2) or H(2)O(2). Reactions discussed in this Account do not involve mediators, since the latter can impart low reaction selectivity and catalyst instability. As an efficient solution to the problem of direct M-C oxidation and functionalization with O(2) and H(2)O(2), this Account introduces the use of facially chelating semilabile ligands such as di(2-pyridyl)methanesulfonate and the hydrated form of di(2-pyridyl)ketone that enable selective and facile M(II)-C(sp(n)) bond functionalization with O(2) (M = Pt, n = 3; M = Pd, n = 3 (benzylic)) or H(2)O(2) (M = Pd, n = 2). The reactions proceed efficiently in protic solvents such as water, methanol, or acetic acid. With the exception of benzylic Pd(II) complexes, the

  7. Building the future of WaferSat spacecraft for relativistic spacecraft

    Science.gov (United States)

    Brashears, Travis; Lubin, Philip; Rupert, Nic; Stanton, Eric; Mehta, Amal; Knowles, Patrick; Hughes, Gary B.

    2016-09-01

    Recently, there has been a dramatic change in the way space missions are viewed. Large spacecraft with massive propellant-filled launch stages have dominated the space industry since the 1960's, but low-mass CubeSats and low-cost rockets have enabled a new approach to space exploration. In recent work, we have built upon the idea of extremely low mass (sub 1 kg), propellant-less spacecraft that are accelerated by photon propulsion from dedicated directed-energy facilities. Advanced photonics on a chip with hybridized electronics can be used to implement a laser-based communication system on board a sub 1U spacecraft that we call a WaferSat. WaferSat spacecraft are equipped with reflective sails suitable for propulsion by directed-energy beams. This low-mass spacecraft design does not require onboard propellant, creating significant new opportunities for deep space exploration at a very low cost. In this paper, we describe the design of a prototype WaferSat spacecraft, constructed on a printed circuit board. The prototype is envisioned as a step toward a design that could be launched on an early mission into Low Earth Orbit (LEO), as a key milestone in the roadmap to interstellar flight. In addition to laser communication, the WaferSat prototype includes subsystems for power source, attitude control, digital image acquisition, and inter-system communications.

  8. Super-flat wafer chucks: from simulation and testing to a complete 300mm wafer chuck with low wafer deformation between pins

    Science.gov (United States)

    Müller, Renate; Afanasiev, Kanstantin; Ziemann, Marcel; Schmidt, Volker

    2014-04-01

    Berliner Glas is a privately owned, mid-sized manufacturer of precision opto-mechanics in Germany. One specialty of Berliner Glas is the design and production of high performance vacuum and electrostatic wafer chucks. Driven by the need of lithography and inspection for smaller overlay values, we pursue the production of an ideally flat wafer chuck. An ideally flat wafer chuck holds a wafer with a completely flat backside and without lateral distortion within the wafer surface. Key parameters in influencing the wafer chucks effective flatness are thermal performance and thermal management, roughness of the surface, choice of materials and the contact area between wafer and wafer chuck. In this presentation we would like to focus on the contact area. Usually this is decreased as much as possible to avoid sticking effects and the chance of trapped particles between the chuck surface and the backside of the wafer. This can be realized with a pin structure on the chuck surface. Making the pins smaller and moving pins further apart from each other makes the contact area ever smaller but also adds new challenges to achieve a flat and undistorted wafer on the chuck. We would like to address methods of designing and evaluating such a pin structure. This involves not only the capability to simulate the ideal pattern of pins on the chuck's surface, for which we will present 2D and 3D simulation results. As well, we would like to share first results of our functional models. Finally, measurement capability has to be ensured, which means improving and further development of Fizeau flatness test interferometers.

  9. Intermetallic Compound Formation Mechanisms for Cu-Sn Solid-Liquid Interdiffusion Bonding

    Science.gov (United States)

    Liu, H.; Wang, K.; Aasmundtveit, K. E.; Hoivik, N.

    2012-09-01

    Cu-Sn solid-liquid interdiffusion (SLID) bonding is an evolving technique for wafer-level packaging which features robust, fine pitch and high temperature tolerance. The mechanisms of Cu-Sn SLID bonding for wafer-level bonding and three-dimensional (3-D) packaging applications have been studied by analyzing the microstructure evolution of Cu-Sn intermetallic compounds (IMCs) at elevated temperature up to 400°C. The bonding time required to achieve a single IMC phase (Cu3Sn) in the final interconnects was estimated according to the parabolic growth law with consideration of defect-induced deviation. The effect of predominantly Cu metal grain size on the Cu-Sn interdiffusion rate is discussed. The temperature versus time profile (ramp rate) is critical to control the morphology of scallops in the IMC. A low temperature ramp rate before reaching the bonding temperature is believed to be favorable in a SLID wafer-level bonding process.

  10. Direct oxidative arylation of aryl C - H bonds with aryl boronic acids via pd catalysis directed by the N,N-dimethylaminomethyl group.

    Science.gov (United States)

    Zhang, Ji-Cheng; Shi, Jiang-Ling; Wang, Bi-Qin; Hu, Ping; Zhao, Ke-Qing; Shi, Zhang-Jie

    2015-04-01

    Biaryl skeletons were directly constructed via palladium-catalyzed ortho-arylation of N,N-dimethyl benzylamine with aryl boronic acids with high efficiency and high regioselectivity under open-flask conditions. The N,N-dimethylaminomethyl group was first applied as a directing group in such an oxidative coupling. Various substrates proved to be efficient coupling partners, furnishing the corresponding ortho-monoarylated or -diarylated arenes in moderate to good yields under mild conditions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. H-bonding template-directed synthesis of a complete m-PDA-bridged ladder polyhydrosiloxane (OLPHS)

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A highly ordered m-phenylenediimino-bridged ladder polyhydrosiloxane (abbr. OLPHS) with Mn = 1.24 × 104 was synthesized stoichiometric hydrolysis and dehydrochlorination condensation reaction between Si-Cl and Si-OH bonds. The complete ladder structure of OLPHS has been confirmed by the following three data. Two characteristic Bragg's peaks representing the ladder width (w = 0.94 nm) and ladder thickness (t = 0.42 nm) were observed in XRD analysis, which are consistent with those calculated by molecular simulation. The very sharp absorption with a small half-peak width (w1/2 = 0.5 ppm) for [(-HN)HSiO2/2]n moiety of OLPHS in 29Si NMR spectrum indicated presence of the complete ladder structure. As collateral evidence, a higher glass transition temperature (Tg = 105 ℃) is also recorded in the DSC measurement, implying the high stiffness of ladder chain of OLPHS.(C) 2007 Rong Ben Zhang. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.

  12. Substituent Directed Phototransformations of BN-Heterocycles: Elimination vs Isomerization via Selective B-C Bond Cleavage.

    Science.gov (United States)

    Yang, Deng-Tao; Mellerup, Soren K; Peng, Jin-Bao; Wang, Xiang; Li, Quan-Song; Wang, Suning

    2016-09-14

    Electron-rich and -poor BN-heterocycles with benzyl-pyridyl backbones and two bulky aryls on the boron (Ar = tipp, BN-1, Ar = MesF, BN-2) have been found to display distinct molecular transformations upon irradiation by UV light. BN-1 undergoes an efficient photoelimination reaction forming a BN-phenanthrene with ΦPE = 0.25, whereas BN-2 undergoes a thermally reversible, stereoselective, and quantitative isomerization to a dark colored BN-1,3,5-cyclooctatriene (BN-1,3,5-COT, BN-2a). This unusual photoisomerization persists for other BN-heterocycles with electron-deficient aryls such as BN-3 with a benzyl-benzothiazolyl backbone and Mes(F) substituents or BN-4 with a benzyl-pyridyl backbone and two C6F5 groups on the boron. The photoisomerization of BN-4 goes beyond BN-1,3,5-COT (BN-4a), forming a new species (BN-1,3,6-COT, BN-4b) via C-F bond cleavage and [1,3]-F atom sigmatropic migration. Computational studies support that BN-4a is an intermediate in the formation of BN-4b. This work establishes that steric and electronic factors can effectively control the transformations of BN-heterocycles, allowing access to important and previously unknown BN-embedded species.

  13. Candida parapsilosis meningitis associated with Gliadel (BCNU) wafer implants.

    LENUS (Irish Health Repository)

    O'Brien, Deirdre

    2012-02-01

    A 58-year old male presented with meningitis associated with subgaleal and subdural collections 6 weeks following a temporal craniotomy for resection of recurrent glioblastoma multiforme and Gliadel wafer implantation. Candida parapsilosis was cultured from cerebrospinal fluid (CSF) and Gliadel wafers removed during surgical debridement. He was successfully treated with liposomal amphotericin B. To our knowledge, this is the first reported case of Candida parapsilosis meningitis secondary to Gliadel wafer placement.

  14. SHAPE BIFURCATION OF AN ELASTIC WAFER DUE TO SURFACE STRESS

    Institute of Scientific and Technical Information of China (English)

    闫琨; 何陵辉; 刘人怀

    2003-01-01

    A geometrically nonlinear analysis was proposed for the deformation of a freestanding elastically isotropic wafer caused by the surface stress change on one surface. Thelink between the curvature and the change in surface stress was obtained analytically fromenergetic consideration. In contrast to the existing linear analysis, a remarkableconsequence is that, when the wafer is very thin or the surface stress difference between thetwo major surfaces is large enough, the shape of the wafer will bifurcate.

  15. Candida parapsilosis meningitis associated with Gliadel (BCNU) wafer implants.

    LENUS (Irish Health Repository)

    O'brien, Deirdre

    2010-12-15

    A 58-year old male presented with meningitis associated with subgaleal and subdural collections 6 weeks following a temporal craniotomy for resection of recurrent glioblastoma multiforme and Gliadel wafer implantation. Candida parapsilosis was cultured from cerebrospinal fluid (CSF) and Gliadel wafers removed during surgical debridement. He was successfully treated with liposomal amphotericin B. To our knowledge, this is the first reported case of Candida parapsilosis meningitis secondary to Gliadel wafer placement.

  16. Electrochemical behaviors of silicon wafers in silica slurry

    Institute of Scientific and Technical Information of China (English)

    Xiaolan Song; Haiping Yang; Xunda Shi; Xi He; Guanzhou Qiu

    2008-01-01

    The electrochemical behaviors of n-type silicon wafers in silica-based slurry were investigated, and the influences of the pH value and solid content of the slurry on the corrosion of silicon wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of (100) surface was lower than that of (111), whereas the current density of (100) was much higher than that of (111).

  17. Review. Industrial silicon wafer solar cells. Status and trends

    Energy Technology Data Exchange (ETDEWEB)

    Aberle, Armin G.; Boreland, Matthew B.; Hoex, Bram; Mueller, Thomas [National Univ. of Singapore (Singapore). Solar Energy Research Institute of Singapore (SERIS)

    2012-11-01

    Crystalline silicon solar cells dominate today's global photovoltaic (PV) market. This paper presents the status and trends of the most important industrial silicon wafer solar cells, ranging from standard p-type homojunction cells to heterojunction cells on n-type wafers. Owing to ongoing technological innovations such as improved surface passivation and the use of increasingly thinner wafers, the trend towards higher cell efficiencies and lower dollar/watt costs is expected to continue during the next 10 years, making silicon wafer based PV modules a moving target for any competing PV technology. (orig.)

  18. Mask qualification strategies in a wafer fab

    Science.gov (United States)

    Jaehnert, Carmen; Kunowski, Angela

    2007-02-01

    Having consistent high quality photo masks is one of the key factors in lithography in the wafer fab. Combined with stable exposure- and resist processes, it ensures yield increases in production and fast learning cycles for technology development and design evaluation. Preventive controlling of incoming masks and quality monitoring while using the mask in production is essential for the fab to avoid yield loss or technical problems caused by mask issues, which eventually result in delivery problems to the customer. In this paper an overview of the procedures used for mask qualification and production release, for both logic and DRAM, at Infineon Dresden is presented. Incoming qualification procedures, such as specification checks, incoming inspection, and inline litho process window evaluation, are described here. Pinching and electrical tests, including compatibility tests for mask copies for high volume products on optimized litho processes, are also explained. To avoid mask degradation over lifetime, re-inspection checks are done for re-qualification while using the mask in production. The necessity of mask incoming inspection and re-qualification, due to the repeater printing from either the processing defects of the original mask or degrading defects of being used in the fab (i.e. haze, ESD, and moving particles, etc.), is demonstrated. The need and impact of tight mask specifications, such as CD uniformity signatures and corresponding electrical results, are shown with examples of mask-wafer CD correlation.

  19. The clinical application of direct bonding fixed retaining wire.%直接粘接式固定保持弓丝的临床应用

    Institute of Scientific and Technical Information of China (English)

    李雪琦; 刘进

    2001-01-01

    目的:介绍直接粘接式固定保持弓丝的材料及临床应用中的使用方法和效果。方法:使用3MUnitek公司所生产的固定保持器套件。按光固材料的使用步骤,将弓丝粘到牙列片段的唇侧及舌侧。结果:32例病例中,保持期最长1.5a,最短1a,8人次因材料部分脱落而需重新粘接,6个病例保持结束时覆牙 合覆盖近Ⅱ度。26例保持良好的矫治效果。表明此种保持器是一种效果稳定、操作简便、美观的保持器。结论:固定保持器是一种稳定、有效和美观的保持方法。%Objective:To introduce fixed retaining wire materials,applyingmethod and clinical effects.Methods:The fixed retaining kits made in 3MUnitek Co. were used.The wire was bonded with directly bonding technique to the labial or lingual surfaces of teeth according to the application steps of light-cure material.The longest retaining period was 1.5 years,and the shortest one was 1 year.Results:The results showed that among 32 cases there were 8 times of rebonding due to the wire bonding failure.The overbite and over jet of six cases increased about two degree when the retention finished.26 cases maintained fine effect.Conclusions:The fixed retaining appliance is stable,effective and aesthetic.

  20. Copper-catalyzed direct amination of quinoline N-oxides via C-H bond activation under mild conditions.

    Science.gov (United States)

    Zhu, Chongwei; Yi, Meiling; Wei, Donghui; Chen, Xuan; Wu, Yangjie; Cui, Xiuling

    2014-04-04

    A highly efficient and concise one-pot strategy for the direct amination of quinoline N-oxides via copper-catalyzed dehydrogenative C-N coupling has been developed. The desired products were obtained in good to excellent yields for 22 examples starting from the parent aliphatic amines. This methodology provides a practical pathway to 2-aminoquinolines and features a simple system, high efficiency, environmental friendliness, low reaction temperature, and ligand, additives, base, and external oxidant free conditions.

  1. Indirect bonding technique in orthodontics

    Directory of Open Access Journals (Sweden)

    Kübra Yıldırım

    2016-08-01

    Full Text Available ‘Direct Bonding Technique’ which allows the fixed orthodontic appliances to be directly bonded to teeth without using bands decreased the clinic time for bracket bonding and increased esthetics and oral hygiene during orthodontic treatment. However, mistakes in bracket positioning were observed due to decreased direct visual sight and access to posterior teeth. ‘Indirect Bonding Technique’ was developed for eliminating these problems. Initially, decreased bond strength, higher bond failure rate, periodontal tissue irritation, compromised oral hygiene and increased laboratory time were the main disadvantages of this technique when compared to direct bonding. The newly developed materials and modified techniques help to eliminate these negative consequences. Today, the brackets bonded with indirect technique have similar bond strength with brackets bonded directly. Moreover, indirect and direct bonding techniques have similar effects on periodontal tissues. However, indirect bonding technique requires more attention and precision in laboratory and clinical stage, and has higher cost. Orthodontist's preference between these two bonding techniques may differ according to time spent in laboratory and clinic, cost, patient comfort and personal opinion.

  2. Characterization of MEMS-on-tube assembly: reflow bonding of borosilicate glass (Duran ®) tubes to silicon substrates

    NARCIS (Netherlands)

    Mogulkoc, B.; Jansen, H.V.; Berenschot, J.W.; Brake, ter H.J.M.; Knowles, K.M.; Elwenspoek, M.C.

    2009-01-01

    Reflow bonding of borosilicate glass tubes to silicon wafers is a technology which has significant potential for microfluidic applications. The borosilicate glass tubes are designed to be used as an interface and package for wafer-level microfluidic devices. The strength of the resulting package has

  3. Direct observation of a hydrophobic bond in loop-closure of a capped (-OCH2CH2-)n oligomer in water

    CERN Document Server

    Chaudhari, Mangesh I; Paulaitis, Michael E

    2010-01-01

    The small r variation of the probability density P(r) for end-to-end separations of a -CH2CH3 capped (-OCH2CH2-)n oligomer in water is computed to be closely similar to the CH4 ... CH4 potential of mean force under the same circumstances. Since the aqueous solution CH4 ... CH4 potential of mean force is the natural physical definition of a primitive hydrophobic bond, the present result identifies an experimentally accessible circumstance for direct observation of a hydrophobic bond which has not been observed previously because of the low solubility of CH4 in water. The physical picture is that the soluble chain molecule carries the capping groups into aqueous solution, and permits them to find one another with reasonable frequency. Comparison with the corresponding results without the solvent shows that hydration of the solute oxygen atoms swells the chain molecule globule. This supports the view that the chain molecule globule might have a secondary effect on the hydrophobic interaction which is of first in...

  4. ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors

    Science.gov (United States)

    So, Hongyun; Senesky, Debbie G.

    2016-11-01

    Rapid, cost-effective, and simple fabrication/packaging of microscale gallium nitride (GaN) ultraviolet (UV) sensors are demonstrated using zinc oxide nanorod arrays (ZnO NRAs) as an antireflective layer and direct bonding of aluminum wires to the GaN surface. The presence of the ZnO NRAs on the GaN surface significantly reduced the reflectance to less than 1% in the UV and 4% in the visible light region. As a result, the devices fabricated with ZnO NRAs and mechanically stable aluminum bonding wires (pull strength of 3-5 gf) showed higher sensitivity (136.3% at room temperature and 148.2% increase at 250 °C) when compared with devices with bare (uncoated) GaN surfaces. In addition, the devices demonstrated reliable operation at high temperatures up to 300 °C, supporting the feasibility of simple and cost-effective UV sensors operating with higher sensitivity in high-temperature conditions, such as in combustion, downhole, and space exploration applications.

  5. Use of nanoporous columnar thin film in the wafer-level packaging of MEMS devices

    Science.gov (United States)

    Lee, Byung-Kee; Choi, Dong-Hoon; Yoon, Jun-Bo

    2010-04-01

    This paper presents a new packaging technology that uses a nanoporous columnar thin film to seal microelectromechanical system (MEMS) devices at the wafer level. In the proposed packaging process, the processing temperature is 350 °C. The process is relatively inexpensive compared to wafer level packaging processes, because the wafer-bonding step is eliminated and the die size is shrunk. In the suggested approach, a sputtered columnar thin film at room temperature forms vertical nanopores as etch holes, and an air cavity is formed by the removal of a sacrificial layer through the nanopores in the columnar membrane. Subsequent hermetic vacuum packaging of the cavity is achieved by depositing thin films over the membrane under low pressure. The hermeticity of the packaging was verified by using an optical surface morphology microscope to measure the deflection change of the sealing membrane before and after breaking of the vacuum through an interconnected membrane. The long-term hermeticity was monitored by measuring the maximum central deflection of the PECVD sealing layer over a period of 170 days. The precise pressure (0.7 Torr) and short-term (30 days) pressure change inside the cavity were measured by encapsulated Ni Pirani gauges, representing packaged freestanding MEMS devices.

  6. The multi-motion-overlap algorithms for minimizing the time between successive scans of wafer stage

    Institute of Scientific and Technical Information of China (English)

    Pan Haihong; Chen Lin; Li Xiaoqing; Zhou Yunfei

    2008-01-01

    In order to optimize the transitional time during the successive exposure seam for a step-and-scan lithography and improve the productivity in a wafer production process, an investigation of the motion trajectory planning along the scanning direction for wafer stage was carried out.The motions of wafer stage were divided into two respective logical moves ( i.e.step-move and scan-move) and the multi-motionoverlap algorithms (MMOA) were presented for optimizing the transitional time between the successive exposure scans.The conventional motion planning method, the Hazehon method and the MMOA were analyzed theoretically and simulated using MATLAB under four different exposure field sizes.The results show that the total time between two successive scans consumed by MMOA is reduced by 4.82%,2.62%, 3.06% and 3.96%, compared with those of the conventional motion planning method; and reduced by 2.58%, 0.76%, 1.63% and 2.92%, compared with those of the Hazehon method respectively.The theoretical analyses and simulation results illuminate that the MMOA can effectively minimize the transitional step time between successive exposure scans and therefore increase the wafer fabricating productivity.

  7. FY1995 study of perfect-closed ULSI manufacturing system for future large-diameter wafer processing; 1995 nendo jisedai daikokei wafer taio kanzen closed ULSI seizo sochi system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-05-01

    The purpose of this study is to develop advanced processing technologies to fabricate ultra-large-scale-integrated circuit on large-diameter wafers with high-precision and no-fluctuations at low temperatures. We develop the plasma process technologies to generate high-density uniform plasma with high-controllability to realize very precise manufacturing and low-temperature processing, and technologies for the high-performance process apparatus in which wafer surface is never exposed to atmosphere and therefore ultraclean wafer surface in atomic level are always maintained and molecules and ions react on the wafer surface in perfect accordance with reaction theories. We have developed a plasma process equipment using RLSA (Radial Line Slot Antenna) for formations of high-quality thin films. As a result, high-density uniform plasma has been successfully produced. The kinetic energy of bombarding ions onto the semiconductor substrate surface can be reduced to 7eV in this microwave plasma. Therefore high-quality thin films without any damages can be successfully formed. Next, we have developed magnetron plasma equipment with dipole-ring magnet for deep sub-micron etching. It was revealed that deviation of the plasma due to E x B drifts of electrons was perfectly improved by applying RF to an upper ring electrode. It was also revealed that to realize a closed manufacturing system, in which the wafers are transported in an ultra clean N{sub 2} environment and the wafer surface are never exposed to atmosphere, is essential for the deep sub-micron semiconductor manufacturing with high-reliability. Additionally, very fine-structure and bonding state of Si (100) surface which are terminated by hydrogen or fluorine, chorine was made clear by calculations using quantum chemistry under the three-dimensional periodic boundary condition. (NEDO)

  8. Cooperative catalysis of metal and O-H···O/sp3-C-H···O two-point hydrogen bonds in alcoholic solvents: Cu-catalyzed enantioselective direct alkynylation of aldehydes with terminal alkynes.

    Science.gov (United States)

    Ishii, Takaoki; Watanabe, Ryo; Moriya, Toshimitsu; Ohmiya, Hirohisa; Mori, Seiji; Sawamura, Masaya

    2013-09-27

    Catalyst-substrate hydrogen bonds in artificial catalysts usually occur in aprotic solvents, but not in protic solvents, in contrast to enzymatic catalysis. We report a case in which ligand-substrate hydrogen-bonding interactions cooperate with a transition-metal center in alcoholic solvents for enantioselective catalysis. Copper(I) complexes with prolinol-based hydroxy amino phosphane chiral ligands catalytically promoted the direct alkynylation of aldehydes with terminal alkynes in alcoholic solvents to afford nonracemic secondary propargylic alcohols with high enantioselectivities. Quantum-mechanical calculations of enantiodiscriminating transition states show the occurrence of a nonclassical sp(3)-C-H···O hydrogen bond as a secondary interaction between the ligand and substrate, which results in highly directional catalyst-substrate two-point hydrogen bonding.

  9. Analysis of wafer heating in 14nm DUV layers

    Science.gov (United States)

    Subramany, Lokesh; Chung, Woong Jae; Samudrala, Pavan; Gao, Haiyong; Aung, Nyan; Gomez, Juan Manuel; Minghetti, Blandine; Lee, Shawn

    2016-03-01

    To further shrink the contact and trench dimensions, Negative Tone Development (NTD) has become the de facto process at these layers. The NTD process uses a positive tone resist and an organic solvent-based negative tone developer which leads to improved image contrast, larger process window and smaller Mask Error Enhancement Factor (MEEF)[1]. The NTD masks have high transmission values leading to lens heating and as observed here wafer heating as well. Both lens and wafer heating will contribute to overlay error, however the effects of lens heating can be mitigated by applying lens heating corrections while no such corrections exist for wafer heating yet. Although the magnitude of overlay error due to wafer heating is low relative to lens heating; ever tightening overlay requirements imply that the distortions due to wafer heating will quickly become a significant part of the overlay budget. In this work the effects, analysis and observations of wafer heating on contact and metal layers of the 14nm node are presented. On product wafers it manifests as a difference in the scan up and scan down signatures between layers. An experiment to further understand wafer heating is performed with a test reticle that is used to monitor scanner performance.

  10. Wafer hot spot identification through advanced photomask characterization techniques

    Science.gov (United States)

    Choi, Yohan; Green, Michael; McMurran, Jeff; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

    2016-10-01

    As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer's needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.

  11. Development of a novel plasma scanning technique for high-quality anodic bonding

    Science.gov (United States)

    Wu, Jim-Wei; Yang, Chii-Rong; Huang, Che-Yi

    2016-04-01

    Anodic bonding is a type of nonintermediate wafer bonding technique that has been widely used in microelectromechanical systems for sealing devices or assembling microstructures. However, the conventional anodic bonding method has a limitation. The specimens being bonded must typically be in contact with the anode and cathode electrodes during the bonding process. In general, the initial bonding position corresponds to the contact area of the two electrodes; subsequently, the bonded region gradually extends to cover the entire target region. Nevertheless, the traditional diffuse bonding method provides limited bonding efficiency in industrial applications. Therefore, this paper proposes a novel plasma bonding technique for 2D scanning anodic bonding. In this technique, the plasma is positioned to simultaneously heat and bond specimens. We conducted an experiment that entailed bonding 4-inch silicon/glass wafers by using N2 plasma. The results revealed that an almost bubble-free bonded interface and an average bonding strength exceeding 37 MPa were achieved for a bonding time of 15 min 53 s, bonding voltage of 2 kV, noncontact distance (between the cathode electrode and the bonding specimens) of 3 mm, variable raster scan path, scan speed of 3 mm s-1, and continuous scan steps of 2.5 mm in the x- and y-axes. A comprehensive series of experiments were performed to validate the bonding performance of the proposed technique.

  12. Infrared spectroscopy of wafer-scale graphene.

    Science.gov (United States)

    Yan, Hugen; Xia, Fengnian; Zhu, Wenjuan; Freitag, Marcus; Dimitrakopoulos, Christos; Bol, Ageeth A; Tulevski, George; Avouris, Phaedon

    2011-12-27

    We report spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions) and the wavelength at which Pauli blocking occurs due to band filling. From these, the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37 ± 0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically doped single-layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 μm (40 cm(-1)) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

  13. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  14. Laser Enhanced Hydrogen Passivation of Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Lihui Song

    2015-01-01

    Full Text Available The application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Improvements in minority carrier lifetime are confirmed in the laser hydrogenated regions using photoluminescence (PL imaging. However with inappropriate laser settings a localised reduction in minority carrier lifetime can result. It is observed that high illumination intensities and rapid cooling are beneficial for achieving improvements in minority carrier lifetimes through laser hydrogenation. The laser hydrogenation process is then applied to finished screen-printed solar cells fabricated on seeded-cast quasi monocrystalline silicon wafers. The passivation of dislocation clusters is observed with clear improvements in quantum efficiency, open circuit voltage, and short circuit current density, leading to an improvement in efficiency of 0.6% absolute.

  15. Comparison of slowness profiles of lamb wave with elastic moduli and crystal structure in single crystalline silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Min, Young Jae; Yun, Gyeong Won; Kim, Kyung Min; Roh, Yuji; Kim, Young H. [Applied Acoustics Lab, Korea Science Academy of KAIST, Busan (Korea, Republic of)

    2016-02-15

    Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

  16. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers.

    Science.gov (United States)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Wood, Barry; Iacopi, Francesca

    2014-08-15

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

  17. Lanthanide-directed synthesis of luminescent self-assembly supramolecular structures and mechanically bonded systems from acyclic coordinating organic ligands.

    Science.gov (United States)

    Barry, Dawn E; Caffrey, David F; Gunnlaugsson, Thorfinnur

    2016-06-01

    Herein some examples of the use of lanthanide ions (f-metal ions) to direct the synthesis of luminescent self-assembly systems (architectures) will be discussed. This area of lanthanide supramolecular chemistry is fast growing, thanks to the unique physical (magnetic and luminescent) and coordination properties of the lanthanides, which are often transferred to the resulting supermolecule. The emphasis herein will be on systems that are luminescent, and hence, generated by using either visibly emitting ions (such as Eu(III), Tb(III) and Sm(III)) or near infrared emitting ions (like Nd(III), Yb(III) and Er(III)), formed through the use of templating chemistry, by employing structurally simple ligands, possessing oxygen and nitrogen coordinating moieties. As the lanthanides have high coordination requirements, their use often allows for the formation of coordination compounds and supramolecular systems such as bundles, grids, helicates and interlocked molecules that are not synthetically accessible through the use of other commonly used templating ions such as transition metal ions. Hence, the use of the rare-earth metal ions can lead to the formation of unique and stable species in both solution and in the solid state, as well as functional and responsive structures.

  18. Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gate

    DEFF Research Database (Denmark)

    Buron, Jonas Due; Mackenzie, David M. A.; Petersen, Dirch Hjorth;

    2015-01-01

    We demonstrate wafer-scale, non-contact mapping of essential carrier transport parameters, carrier mobility (mu(drift)), carrier density (N-S), DC sheet conductance (sigma(dc)), and carrier scattering time (tau(SC)) in CVD graphene, using spatially resolved terahertz time-domain conductance...... spectroscopy. sigma(dc) and tau(SC) are directly extracted from Drude model fits to terahertz conductance spectra obtained in each pixel of 10 x 10 cm(2) maps with a 400 mu m step size. sigma(dc)- and tau(SC)-maps are translated into mu(drift) and N-S maps through Boltzmann transport theory for graphene charge...... carriers and these parameters are directly compared to van der Pauw device measurements on the same wafer. The technique is compatible with all substrate materials that exhibit a reasonably low absorption coefficient for terahertz radiation. This includes many materials used for transferring CVD graphene...

  19. Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

    Science.gov (United States)

    Lee, Ho Ki; Baek, Kye Hyun; Shin, Kyoungsub

    2017-06-01

    As semiconductor devices are scaled down to sub-20 nm, process window of plasma etching gets extremely small so that process drift or shift becomes more significant. This study addresses one of typical process drift issues caused by consumable parts erosion over time and provides feasible solution by using virtual metrology (VM) based wafer-to-wafer control. Since erosion of a shower head has center-to-edge area dependency, critical dimensions (CDs) at the wafer center and edge area get reversed over time. That CD trend is successfully estimated on a wafer-to-wafer basis by a partial least square (PLS) model which combines variables from optical emission spectroscopy (OES), VI-probe and equipment state gauges. R 2 of the PLS model reaches 0.89 and its prediction performance is confirmed in a mass production line. As a result, the model can be exploited as a VM for wafer-to-wafer control. With the VM, advanced process control (APC) strategy is implemented to solve the CD drift. Three σ of CD across wafer is improved from the range (1.3-2.9 nm) to the range (0.79-1.7 nm). Hopefully, results introduced in this paper will contribute to accelerating implementation of VM based APC strategy in semiconductor industry.

  20. Design and implementation of a novel conical electrode for fast anodic bonding

    Science.gov (United States)

    Yang, Chii-Rong; Wu, Jim-Wei; Chang, Long-Yin

    2014-10-01

    Anodic bonding is a frequently used nonintermediate wafer-bonding technique for use in MEMS. However, it has a minimum bonding time for a 4 in silicon/glass wafer that is generally limited to the order of several minutes because of the gas-trapping problem that occurs in the bonded interface when a conventional bonding electrode is used. Therefore, the purpose of this study was to develop a novel conical bonding electrode, which shortens the bonding time and solves the gas-trapping problem of the bonded interface. The 4 in silicon/glass wafers fitted with the proposed electrode exhibited a bonding ratio of 99.89% and an average bonding strength of around 15 MPa, which was attained within 15 s, at a bonding voltage of 900 V and a bonding temperature of 400 °C. A comprehensive series of experiments was performed to validate the excellent bonding performance of the proposed conical electrode.

  1. The amide C-N bond of isatins as the directing group and the internal oxidant in Ru-catalyzed C-H activation and annulation reactions: access to 8-amido isocoumarins.

    Science.gov (United States)

    Kaishap, Partha Pratim; Sarma, Bipul; Gogoi, Sanjib

    2016-07-28

    The N-O, N-N and O-O bonds are the frequently used internally oxidative directing groups used in various redox-neutral coupling reactions. The sole use of the C-N bond as the oxidizing directing group was reported recently by Li X. and co-workers for the Rh(iii)-catalyzed C-H activation of phenacyl ammonium salts. Herein, we report the use of the amide C-N bond of isatins as the oxidizing directing group for the Ru(ii)-catalyzed redox-neutral C-H activation and annulation reactions with alkynes which afford 8-amido isocoumarins. The reaction also features excellent regioselectivity with alkyl aryl substituted alkynes.

  2. Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits.

    Science.gov (United States)

    Kang, Jian; Takenaka, Mitsuru; Takagi, Shinichi

    2016-05-30

    We present Ge rib waveguide devices fabricated on a Ge-on-insulator (GeOI) wafer as a proof-of-concept Ge mid-infrared photonics platform. Numerical analysis revealed that the driving current for a given optical attenuation in a carrier-injection Ge waveguide device at a 1.95 μm wavelength can be approximately five times smaller than that in a Si device, enabling in-line carrier-injection Ge optical modulators based on free-carrier absorption. We prepared a GeOI wafer with a 2-μm-thick buried oxide layer (BOX) by wafer bonding. By using the GeOI wafer, we fabricated Ge rib waveguides. The Ge rib waveguides were transparent to 2 μm wavelengths and the propagation loss was found to be 1.4 dB/mm, which may have been caused by sidewall scattering. We achieved a negligible bend loss in the Ge rib waveguide, even with a 5 μm bend radius, owing to the strong optical confinement in the GeOI structure. We also formed a lateral p-i-n junction along the Ge rib waveguide to explore the capability of absorption modulation by carrier injection. By injecting current through the lateral p-i-n junction, we achieved optical intensity modulation in the 2 μm band based on the free-carrier absorption in Ge.

  3. SEMICONDUCTOR TECHNOLOGY A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

    Science.gov (United States)

    Baohong, Gao; Yuling, Liu; Chenwei, Wang; Yadong, Zhu; Shengli, Wang; Qiang, Zhou; Baimei, Tan

    2010-10-01

    This paper presents a new cleaning process using boron-doped diamond (BDD) film anode electrochemical oxidation for metallic contaminants on polished silicon wafer surfaces. The BDD film anode electrochemical oxidation can efficiently prepare pyrophosphate peroxide, pyrophosphate peroxide can oxidize organic contaminants, and pyrophosphate peroxide is deoxidized into pyrophosphate. Pyrophosphate, a good complexing agent, can form a metal complex, which is a structure consisting of a copper ion, bonded to a surrounding array of two pyrophosphate anions. Three polished wafers were immersed in the 0.01 mol/L CuSO4 solution for 2 h in order to make comparative experiments. The first one was cleaned by pyrophosphate peroxide, the second by RCA (Radio Corporation of America) cleaning, and the third by deionized (DI) water. The XPS measurement result shows that the metallic contaminants on wafers cleaned by the RCA method and by pyrophosphate peroxide is less than the XPS detection limits of 1 ppm. And the wafer's surface cleaned by pyrophosphate peroxide is more efficient in removing organic carbon residues than RCA cleaning. Therefore, BDD film anode electrochemical oxidation can be used for microelectronics cleaning, and it can effectively remove organic contaminants and metallic contaminants in one step. It also achieves energy saving and environmental protection.

  4. Ormocer: An aesthetic direct restorative material; An in vitro study comparing the marginal sealing ability of organically modified ceramics and a hybrid composite using an ormocer-based bonding agent and a conventional fifth-generation bonding agent

    Directory of Open Access Journals (Sweden)

    Sarika Kalra

    2012-01-01

    Full Text Available Aims and Objectives : To compare the marginal sealing ability of ormocer with a hybrid composite using an ormocer based bonding agent and a conventional fifth generation bonding agent. Materials and Methods : Fifty four human premolars were randomly distributed into four test groups of 12 teeth each and two control groups of 3 teeth each. Class I occlusal preparation of 1.5 mm depth were made in each tooth. These were restored using the adhesive and restorative material according to the group. The restorations were finished using a standard composite finishing and polishing kit. Thermocycling between 5 o C and 55 o C was carried out. Having blocked the root apex and the entire tooth surface except 1 mm around the restoration margin, the teeth were immersed in 2% methylene blue for 48 hours, after which the dye penetration through the margins of each sample was studied under a stereomicroscope. Results and Discussion : Group IV (Admira with Admira Bond showed the minimum marginal leakage with a mean of 0.200 mm. Four samples in this group showed no microleakage at all and a maximum of 0.400 mm was seen in one sample. Group II (Spectrum TPH with Admira Bond showed the maximum leakage with a mean of 0.433 mm. One sample showed as much as 1.00 mm of microleakage. Admira when used with Admira Bond showed lesser microleakage than Spectrum TPH used with Prime & Bond NT, the difference being statistically insignificant.

  5. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  6. Bond Issues.

    Science.gov (United States)

    Pollack, Rachel H.

    2000-01-01

    Notes trends toward increased borrowing by colleges and universities and offers guidelines for institutions that are considering issuing bonds to raise money for capital projects. Discussion covers advantages of using bond financing, how use of bonds impacts on traditional fund raising, other cautions and concerns, and some troubling aspects of…

  7. Review of Chemical-Mechanical Planarization Modeling for Integrated Circuit Fabrication: From Particle Scale to Die and Wafer Scales

    OpenAIRE

    Luo, Jianfeng; Dornfeld, David A.

    2003-01-01

    Modeling and simulation are critical to transfer CMP from an engineering 'art' to an engineering 'science'. Research efforts in CMP modeling have been attempted in the last decade. There is an urgent need to review the current models including their limitations and future research directions systematically. In this paper, chemical mechanical planarization modeling is reviewed systematically, from particle scale to die and wafer scales.

  8. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-19

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  9. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-01

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  10. X-Ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy

    Science.gov (United States)

    Park, Yoonjoon; Choi, Sang Hyouk; King, Glen C.; Elliott, James R.; Dimarcantonio, Albert L.

    2010-01-01

    A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90 deg, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

  11. Stress-warping relation in thin film coated wafers

    Science.gov (United States)

    Schicker, J.; Khan, W. A.; Arnold, T.; Hirschl, C.

    2017-02-01

    A misfit strain or stress in a thin layer on the surface of a wafer lets the composite disk warp. When the wafer is thin and large, the Stoney estimation of the film stress as function of the curvature yields large errors. We present a nonlinear analytical model that describes the relationship between warpage and film stress on an anisotropic wafer, and give evidence for its suitability for large thin wafers by a comparison to finite element results. Finally, we show the confidence limit of the Stoney estimation and the benefit by the nonlinear model. For thin coatings, it can be succesfully used even without knowledge of the film properties, which was the main advantage of the Stoney estimation.

  12. On-wafer magnetic resonance of magnetite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Little, Charles A.E., E-mail: caelittle@gmail.com; Russek, Stephen E., E-mail: stephen.russek@nist.gov; Booth, James C., E-mail: james.booth@nist.gov; Kabos, Pavel, E-mail: pavel.kabos@nist.gov; Usselman, Robert J., E-mail: robertusselman@gmail.com

    2015-11-01

    Magnetic resonance measurements of ferumoxytol and TEMPO were made using an on-wafer transmission line technique with a vector network analyzer, allowing for broadband measurements of small sample volumes (4 nL) and small numbers of spins (1 nmol). On-wafer resonance measurements were compared with standard single-frequency cavity-based electron paramagnetic resonance (EPR) measurements using a new power conservation approach and the results show similar line shape. On-wafer magnetic resonance measurements using integrated microfluidics and microwave technology can significantly reduce the cost and sample volumes required for EPR spectral analysis and allow for integration of EPR with existing lab-on-a-chip processing and characterization techniques for point-of-care medical diagnostic applications. - Highlights: • On-wafer measurements showed similar line shape to traditional cavity-based EPR. • New power conservation approach alleviates de-embedding ambiguities. • Allows for measurements of small sample volumes and small number of spins.

  13. High Performance Wafer-Based Capillary Electrochromatography Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Los Gatos Research proposes to develop wafer-based capillary electrochromatography for lab-on-a-chip (LOC) applications. These microfluidic devices will be...

  14. 9nm node wafer defect inspection using visible light

    Science.gov (United States)

    Zhou, Renjie; Edwards, Chris; Popescu, Gabriel; Goddard, Lynford L.

    2014-04-01

    Over the past 2 years, we have developed a common optical-path, 532 nm laser epi-illumination diffraction phase microscope (epi-DPM) and successfully applied it to detect different types of defects down to 20 by 100 nm in a 22nm node intentional defect array (IDA) wafer. An image post-processing method called 2DISC, using image frame 2nd order differential, image stitching, and convolution, was used to significantly improve sensitivity of the measured images. To address 9nm node IDA wafer inspection, we updated our system with a highly stable 405 nm diode laser. By using the 2DISC method, we detected parallel bridge defects in the 9nm node wafer. To further enhance detectability, we are exploring 3D wafer scanning, white-light illumination, and dark-field inspection.

  15. Investigation on Adsorption State of Surface Adsorbate on Silicon Wafer

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    An adsorption kinetics model for adsorbate on the specularly polished silicon wafer was suggested. The mathematical model of preferential adsorption and the mechanism controlling the adsorption state of adsorbate were discussed.

  16. Use of Selective Anodic Bonding to Create Micropump Chambers with Virtually No Dead Volume

    NARCIS (Netherlands)

    Veenstra, T.T.; Berenschot, Johan W.; Gardeniers, Johannes G.E.; Sanders, Remco G.P.; Elwenspoek, Michael Curt; van den Berg, Albert

    2001-01-01

    Membrane micropump chambers of 11 mm diam with virtually zero) dead volume were realized using selective anodic bonding. The selective bonding was achieved with less than 1 mm thick metallic antibonding layers on the glass wafer. Experiments were carried out to come to a better understanding of the

  17. Use of selective anodic bonding to create micropump chambers with virtually no dead volume

    NARCIS (Netherlands)

    Veenstra, T.T.; Berenschot, Johan W.; Gardeniers, Johannes G.E.; Sanders, Remco G.P.; Elwenspoek, Michael Curt; van den Berg, Albert

    2001-01-01

    Membrane micropump chambers of 11 mm diam with virtually zero dead volume were realized using selective anodic bonding. The selective bonding was achieved with less than 1 nm thick metallic antibonding layers on the glass wafer. Experiments were carried out to come to a better understanding of the

  18. IGBT Scaling Principle Toward CMOS Compatible Wafer Processes

    OpenAIRE

    2012-01-01

    A scaling principle for trench gate IGBT is proposed. CMOS technology on large diameter wafer enables to produce various digital circuits with higher performance and lower cost. The transistor cell structure becomes laterally smaller and smaller and vertically shallower and shallower. In contrast, latest IGBTs have rather deeper trench structure to obtain lower on-state voltage drop and turn-off loss. In the aspect of the process uniformity and wafer warpage, manufacturing such structure in t...

  19. Development of Megasonic cleaning for silicon wafers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, A.

    1980-09-01

    The major goals to develop a cleaning and drying system for processing at least 2500 three-in.-diameter wafers per hour and to reduce the process cost were achieved. The new system consists of an ammonia-hydrogen peroxide bath in which both surfaces of 3/32-in.-spaced, ion-implanted wafers are cleaned in quartz carriers moved on a belt past two pairs of Megasonic transducers. The wafers are dried in the novel room-temperature, high-velocity air dryer in the same carriers used for annealing. A new laser scanner was used effectively to monitor the cleaning ability on a sampling basis. The following factors contribute to the improved effectiveness of the process: (1) recirculation and filtration of the cleaning solution permit it to be used for at least 100,000 wafers with only a relatively small amount of chemical make-up before discarding; (2) uniform cleanliness is achieved because both sides of the wafer are Megasonically scrubbed to remove particulate impurities; (3) the novel dryer permits wafers to be dried in a high-velocity room-temperature air stream on a moving belt in their quartz carriers; and (4) the personnel safety of such a system is excellent and waste disposal has no adverse ecological impact. With the addition of mechanical transfer arms, two systems like the one developed will produce enough cleaned wafers for a 30-MW/year production facility. A projected scale-up well within the existing technology would permit a system to be assembled that produces about 12,745 wafers per hour; about 11 such systems, each occupying about 110 square feet, would be needed for each cleaning stage of a 500-MW/year production facility.

  20. One step automated unpatterned wafer defect detection and classification

    Science.gov (United States)

    Dou, Lie; Kesler, Daniel; Bruno, William; Monjak, Charles; Hunt, Jim

    1998-11-01

    Automated detection and classification of crystalline defects on micro-grade silicon wafers is extremely important for integrated circuit (IC) device yield. High training cost, limited capability of classifying defects, increasing possibility of contamination, and unexpected human mistakes necessitate the need to replace the human visual inspection with automated defect inspection. The Laser Scanning Surface Inspection Systems (SSISs) equipped with the Reconvergent Specular Detection (RSD) apparatus are widely used for final wafer inspection. RSD, more commonly known as light channel detection (LC), is capable of detecting and classifying material defects by analyzing information from two independent phenomena, light scattering and reflecting. This paper presents a new technique including a new type of light channel detector to detect and classify wafer surface defects such as slipline dislocation, Epi spikes, Pits, and dimples. The optical system to study this technique consists of a particle scanner to detect and quantify light scattering events from contaminants on the wafer surface and a RSD apparatus (silicon photo detector). Compared with the light channel detector presently used in the wafer fabs, this new light channel technique provides higher sensitivity for small defect detection and more defect scattering signatures for defect classification. Epi protrusions (mounds and spikes), slip dislocations, voids, dimples, and some other common defect features and contamination on silicon wafers are studied using this equipment. The results are compared quantitatively with that of human visual inspection and confirmed by microscope or AFM. This new light channel technology could provide the real future solution to the wafer manufacturing industry for fully automated wafer inspection and defect characterization.

  1. Further investigation of EUV process sensitivities for wafer track processing

    Science.gov (United States)

    Bradon, Neil; Nafus, K.; Shite, H.; Kitano, J.; Kosugi, H.; Goethals, M.; Cheng, S.; Hermans, J.; Hendrickx, E.; Baudemprez, B.; Van Den Heuvel, D.

    2010-04-01

    As Extreme ultraviolet (EUV) lithography technology shows promising results below 40nm feature sizes, TOKYO ELECTRON LTD.(TEL) is committed to understanding the fundamentals needed to improve our technology, thereby enabling customers to meet roadmap expectations. TEL continues collaboration with imec for evaluation of Coater/Developer processing sensitivities using the ASML Alpha Demo Tool for EUV exposures. The results from the collaboration help develop the necessary hardware for EUV Coater/Developer processing. In previous work, processing sensitivities of the resist materials were investigated to determine the impact on critical dimension (CD) uniformity and defectivity. In this work, new promising resist materials have been studied and more information pertaining to EUV exposures was obtained. Specifically, post exposure bake (PEB) impact to CD is studied in addition to dissolution characteristics and resist material hydrophobicity. Additionally, initial results show the current status of CDU and defectivity with the ADT/CLEAN TRACK ACTTM 12 lithocluster. Analysis of a five wafer batch of CDU wafers shows within wafer and wafer to wafer contribution from track processing. A pareto of a patterned wafer defectivity test gives initial insight into the process defects with the current processing conditions. From analysis of these data, it's shown that while improvements in processing are certainly possible, the initial results indicate a manufacturable process for EUV.

  2. Strategy optimization for mask rule check in wafer fab

    Science.gov (United States)

    Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

    2015-07-01

    Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

  3. Using Multiple Implant Regions To Reduce Development Wafer Usage

    Science.gov (United States)

    Walther, S. R.; Falk, S.; Mehta, S.; Erokhin, Y.; Nunan, P.

    2006-11-01

    The cost of new process development has risen significantly with larger wafer sizes and the increased number of fabrication steps needed to create advanced devices. The high value of each 300 mm development wafer has spurred efforts to find a way to explore more than a single process setting with each wafer. Traditional methods of defining multiple spatially distinct implant regions on a single wafer achieve poor utilization of device die. The need for efficient utilization of the die and wide process latitude for defining multiple implant regions per wafer has led to the development of an implant proximity mask (vMask™), which permits sharply defined borders between implant regions that may have different species, energy, angle, or dose. The capability of this system to achieve multiple spatially resolved implant conditions per wafer with high die utilization and using the same process parameters as production implants will be described. Specifically, results for measurement of the uniform process area, process repeatability, and cleanliness will illustrate the potential of this technique to dramatically reduce implant process development costs.

  4. Dry texturing of mc-Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Garima [ENEA-Casaccia, Rome (Italy); CNER, 14-Vigyan Bhawan, University of Rajasthan, Jaipur (India); De Iuliis, Simona; Serenelli, Luca; Salza, Enrico; Tucci, Mario [ENEA-Casaccia, Rome (Italy)

    2011-03-15

    Texturing of mc-Si is a prevailing research topic to improve solar cell efficiency in production. Surface texturing for enhanced absorption in Si has been historically obtained by creating randomly distributed pyramids using anisotropic etchants; but this preferential etching works only on single crystalline silicon because of its crystallographic orientations. A low-cost, large area, random, mask-less texturing scheme is expected to significantly impact terrestrial PV technology and reduce the amount of wet-chemical waste. We propose an approach based on randomly etched mc-Si by RIE system using NF{sub 3} instead of SF{sub 6} or CF{sub 4} to reduce the detrimental formation of carbonaceous or sulfurous contamination at the silicon surface, which results in a surface recombination. To obtain a fast process we have investigated the effect of the chemical etching due to the NF{sub 3} radicals and the ion bombardment induced by Ar. We have found that Arions promote a helpful surface pre-conditioning, while fluorine radicals, produced by NF{sub 3} dissociation, are needed to increase the Si etching rate. Different combinations of flux ratios, gas pressures and RF power have been explored. Efforts have been devoted in obtaining a homogeneous texture on large area wafers, which is inescapable for industrialization. After 10 minutes process effective reflectance values have been measured within the range of 12-14%, and with a-Si/SiN{sub x} the value reduced to 7%. Post-processing minority carrier lifetime values in the range of 10 microseconds have been measured without applying any further chemical cleaning. Additionally, microscopic analysis has been performed to evaluate the surface microstructure morphology (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Reliable aluminum contact formation by electrostatic bonding

    Science.gov (United States)

    Kárpáti, T.; Pap, A. E.; Radnóczi, Gy; Beke, B.; Bársony, I.; Fürjes, P.

    2015-07-01

    The paper presents a detailed study of a reliable method developed for aluminum fusion wafer bonding assisted by the electrostatic force evolving during the anodic bonding process. The IC-compatible procedure described allows the parallel formation of electrical and mechanical contacts, facilitating a reliable packaging of electromechanical systems with backside electrical contacts. This fusion bonding method supports the fabrication of complex microelectromechanical systems (MEMS) and micro-opto-electromechanical systems (MOEMS) structures with enhanced temperature stability, which is crucial in mechanical sensor applications such as pressure or force sensors. Due to the applied electrical potential of  -1000 V the Al metal layers are compressed by electrostatic force, and at the bonding temperature of 450 °C intermetallic diffusion causes aluminum ions to migrate between metal layers.

  6. Electric current characteristic of anodic bonding

    Science.gov (United States)

    He, Jun; Yang, Fang; Wang, Wei; Zhang, Li; Huang, Xian; Zhang, Dacheng

    2015-06-01

    In this paper, a novel current-time model of anodic bonding is proposed and verified experimentally in order to investigate underlying mechanisms of anodic bonding and to achieve real-time monitoring of bonding procedure. The proposed model provides a thorough explanation for the electric current characteristic of anodic bonding. More significantly, it explains two issues which other models cannot explain. One is the sharp rise in current when a voltage is initially applied during anodic bonding. The other is the unexpected large width of depletion layers. In addition, enlargement of the intimately contacted area during anodic bonding can be obtained from the proposed model, which can be utilized to monitor the bonding process. To verify the proposed model, Borofloat33 glass and silicon wafers were adopted in bonding experiments in SUSS SB6 with five different bonding conditions (350 °C 1200 V 370 °C 1200 V 380 °C 1200 V 380 °C 1000 V and 380 °C 1400 V). The results indicate that the observed current data highly coincide with the proposed current-time model. For widths of depletion layers, depth profiling using secondary ion mass spectrometry demonstrates that the calculated values by the model are basically consistent with the experimental values as well.

  7. Parental Bonding

    Directory of Open Access Journals (Sweden)

    T. Paul de Cock

    2014-08-01

    Full Text Available Estimating the early parent–child bonding relationship can be valuable in research and practice. Retrospective dimensional measures of parental bonding provide a means for assessing the experience of the early parent–child relationship. However, combinations of dimensional scores may provide information that is not readily captured with a dimensional approach. This study was designed to assess the presence of homogeneous groups in the population with similar profiles on parental bonding dimensions. Using a short version of the Parental Bonding Instrument (PBI, three parental bonding dimensions (care, authoritarianism, and overprotection were used to assess the presence of unobserved groups in the population using latent profile analysis. The class solutions were regressed on 23 covariates (demographics, parental psychopathology, loss events, and childhood contextual factors to assess the validity of the class solution. The results indicated four distinct profiles of parental bonding for fathers as well as mothers. Parental bonding profiles were significantly associated with a broad range of covariates. This person-centered approach to parental bonding has broad utility in future research which takes into account the effect of parent–child bonding, especially with regard to “affectionless control” style parenting.

  8. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

    Science.gov (United States)

    Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2014-08-11

    We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

  9. Method for protecting chip corners in wet chemical etching of wafers

    Science.gov (United States)

    Hui, Wing C.

    1994-01-01

    The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

  10. Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

    Science.gov (United States)

    Platzgummer, Elmar; Klein, Christof; Loeschner, Hans

    2013-07-01

    IMS Nanofabrication realized a 50 keV electron multibeam proof-of-concept (POC) tool confirming writing principles with 0.1 nm address grid and lithography performance capability. The POC system achieves the predicted 5 nm 1 sigma blur across the 82 μm×82 μm array of 512×512 (262,144) programmable 20 nm beams. 24-nm half pitch (HP) has been demonstrated and complex patterns have been written in scanning stripe exposure mode. The first production worthy system for the 11-nm HP mask node is scheduled for 2014 (Alpha), 2015 (Beta), and first-generation high-volume manufacturing multibeam mask writer (MBMW) tools in 2016. In these MBMW systems the max beam current through the column is 1 μA. The new architecture has also the potential for 1× mask (master template) writing. Substantial further developments are needed for maskless e-beam direct write (EBDW) applications as a beam current of >2 mA is needed to achieve 100 wafer per hour industrial targets for 300 mm wafer size. Necessary productivity enhancements of more than three orders of magnitude are only possible by shrinking the multibeam optics such that 50 to 100 subcolumns can be placed on the area of a 300 mm wafer and by clustering 10 to 20 multicolumn tools. An overview of current EBDW efforts is provided.

  11. Nickel-Catalyzed C–O Bond-Cleaving Alkylation of Esters: Direct Replacement of the Ester Moiety by Functionalized Alkyl Chains

    KAUST Repository

    Liu, Xiangqian

    2017-06-07

    Two efficient protocols for the nickel-catalyzed aryl–alkyl cross-coupling reactions using esters as coupling components have been established. The methods enable the selective oxidative addition of nickel to acyl C–O and aryl C–O bonds and allow the aryl–alkyl cross-coupling via decarbonylative bond cleavage or through cleavage of a C–O bond with high efficiency and good functional group compatibility. The protocols allow the streamlined, unconventional utilization of widespread ester groups and their precursors, carboxylic acids and phenols, in synthetic organic chemistry.

  12. Direct Covalent Grafting of Phytate to Titanium Surfaces through Ti-O-P Bonding Shows Bone Stimulating Surface Properties and Decreased Bacterial Adhesion.

    Science.gov (United States)

    Córdoba, Alba; Hierro-Oliva, Margarita; Pacha-Olivenza, Miguel Ángel; Fernández-Calderón, María Coronada; Perelló, Joan; Isern, Bernat; González-Martín, María Luisa; Monjo, Marta; Ramis, Joana M

    2016-05-11

    Myo-inositol hexaphosphate, also called phytic acid or phytate (IP6), is a natural molecule abundant in vegetable seeds and legumes. Among other functions, IP6 inhibits bone resorption. It is adsorbed on the surface of hydroxyapatite, inhibiting its dissolution and decreasing the progressive loss of bone mass. We present here a method to directly functionalize Ti surfaces covalently with IP6, without using a cross-linker molecule, through the reaction of the phosphate groups of IP6 with the TiO2 layer of Ti substrates. The grafting reaction consisted of an immersion in an IP6 solution to allow the physisorption of the molecules onto the substrate, followed by a heating step to obtain its chemisorption, in an adaptation of the T-Bag method. The reaction was highly dependent on the IP6 solution pH, only achieving a covalent Ti-O-P bond at pH 0. We evaluated two acidic pretreatments of the Ti surface, to increase its hydroxylic content, HNO3 30% and HF 0.2%. The structure of the coated surfaces was characterized by X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and ellipsometry. The stability of the IP6 coating after three months of storage and after sterilization with γ-irradiation was also determined. Then, we evaluated the biological effect of Ti-IP6 surfaces in vitro on MC3T3-E1 osteoblastic cells, showing an osteogenic effect. Finally, the effect of the surfaces on the adhesion and biofilm viability of oral microorganisms S. mutans and S. sanguinis was also studied, and we found that Ti-IP6 surfaces decreased the adhesion of S. sanguinis. A surface that actively improves osseointegration while decreasing the bacterial adhesion could be suitable for use in bone implants.

  13. Bump Bonding Using Metal-Coated Carbon Nanotubes

    Science.gov (United States)

    Lamb, James L.; Dickie, Matthew R.; Kowalczyk, Robert S.; Liao, Anna; Bronikowski, Michael J.

    2012-01-01

    Bump bonding hybridization techniques use arrays of indium bumps to electrically and mechanically join two chips together. Surface-tension issues limit bump sizes to roughly as wide as they are high. Pitches are limited to 50 microns with bumps only 8-14 microns high on each wafer. A new process uses oriented carbon nanotubes (CNTs) with a metal (indium) in a wicking process using capillary actions to increase the aspect ratio and pitch density of the connections for bump bonding hybridizations. It merges the properties of the CNTs and the metal bumps, providing enhanced material performance parameters. By merging the bumps with narrow and long CNTs oriented in the vertical direction, higher aspect ratios can be obtained if the metal can be made to wick. Possible aspect ratios increase from 1:1 to 20:1 for most applications, and to 100:1 for some applications. Possible pitch density increases of a factor of 10 are possible. Standard capillary theory would not normally allow indium or most other metals to be drawn into the oriented CNTs, because they are non-wetting. However, capillary action can be induced through the ability to fabricate oriented CNT bundles to desired spacings, and the use of deposition techniques and temperature to control the size and mobility of the liquid metal streams and associated reservoirs. This hybridization of two technologies (indium bumps and CNTs) may also provide for some additional benefits such as improved thermal management and possible current density increases.

  14. Excitation and reception of pure shear horizontal waves by using face-shear d24 mode piezoelectric wafers

    Science.gov (United States)

    Miao, Hongchen; Huan, Qiang; Li, Faxin

    2016-11-01

    The fundamental shear horizontal (SH0) wave in plate-like structures is of great importance in non-destructive testing (NDT) and structural health monitoring (SHM) as it is non-dispersive, while excitation or reception of SH0 waves using piezoelectrics is always a challenge. In this work, we firstly demonstrate via finite element simulations that face-shear piezoelectrics is superior to thickness-shear piezoelectrics in driving SH waves. Next, by using a newly defined face-shear d24 PZT wafer as an actuator and face-shear d36 PMN-PT wafers as sensors, pure SH0 wave was successfully excited in an aluminum plate from 130 to 180 kHz. Then, it was shown that the face-shear d24 PZT wafer could receive the SH0 wave only and filter the Lamb waves over a wide frequency range (120-230 kHz). The directionality of the excited SH0 wave was also investigated using face-shear d24 PZT wafers as both actuators and sensors. Results show that pure SH0 wave can be excited symmetrically along two orthogonal directions (0° and 90°) and the amplitude of the excited SH0 wave can keep over 90% of the maximum amplitude when the deviate angle is within 30°. This work could greatly promote the applications of SH0 wave in NDT and SHM.

  15. Process for Patterning Indium for Bump Bonding

    Science.gov (United States)

    Denis, Kevin

    2012-01-01

    An innovation was created for the Cosmology Large Angular Scale Surveyor for integration of low-temperature detector chips with a silicon backshort and a silicon photonic choke through flipchip bonding. Indium bumps are typically patterned using liftoff processes, which require thick resist. In some applications, it is necessary to locate the bumps close to high-aspect-ratio structures such as wafer through-holes. In those cases, liftoff processes are challenging, and require complicated and time-consuming spray coating technology if the high-aspect-ratio structures are delineated prior to the indium bump process. Alternatively, processing the indium bumps first is limited by compatibility of the indium with subsequent processing. The present invention allows for locating bumps arbitrarily close to multiple-level high-aspect-ratio structures, and for indium bumps to be formed without liftoff resist. The process uses the poor step coverage of indium deposited on a silicon wafer that has been previously etched to delineate the location of the indium bumps. The silicon pattern can be processed through standard lithography prior to adding the high-aspect-ratio structures. Typically, high-aspectratio structures require a thick resist layer so this layer can easily cover the silicon topography. For multiple levels of topography, the silicon can be easily conformally coated through standard processes. A blanket layer of indium is then deposited onto the full wafer; bump bonding only occurs at the high points of the topography.

  16. Investigation of the Relationship between Whole-Wafer Strength and Control of Its Edge Engineering

    Science.gov (United States)

    Chen, Po-Ying; Tsai, Ming-Hsing; Yeh, Wen-Kuan; Jing, Ming-Haw; Chang, Yukon

    2009-12-01

    Silicon wafer breakage has become a major concern for all semiconductor fabrication lines because it is brittle, and thus high stresses are easily induced in its manufacture. The production cost of devices significantly increases even for a breakage loss of a few percent if wafers are broken near completion. Even wafer breakage near the beginning of the process is significant. In this investigation, we develop a brand new approach to reducing breakage by using a charge-coupled device (CCD) to capture the cross-section image of the wafer at its edge; the data measured at the edge can be used to determine overall wafer strength. Analysis of the image of the wafer edge is used to characterize silicon strength, and a simple drop test is conducted to elucidate wafer failure, improving our understanding of the accumulation of stress in the wafer bulk before failure. We also describe many of the improvements that have resulted in the virtual elimination of wafer breakage due to unidentified causes. Our analysis gives the optimal front size (B1), edge widths (A1,A2), and bevel angle (θ) for the edge profiles of wafers to prevent wafer breakage. Briefly, when a suitable material and suitable process control approaches are utilized, silicon wafer breakage can be prevented. This is the first investigation providing evidence that whole-wafer strength is an important issue. We present a physical model to explain why wafer fracture has become an increasingly serious problem as the diameter of wafers has increased. The control of wafer edge geometry has been demonstrated to be an effective means of protecting wafers with large diameters against breakage. This model reveals that the breakage rate of wafers can be reduced by controlling the uniformity of the differences between the front size and the rear edge widths during the wafer manufacturing process.

  17. Silicon wafer-based tandem cells: The ultimate photovoltaic solution?

    Science.gov (United States)

    Green, Martin A.

    2014-03-01

    Recent large price reductions with wafer-based cells have increased the difficulty of dislodging silicon solar cell technology from its dominant market position. With market leaders expected to be manufacturing modules above 16% efficiency at 0.36/Watt by 2017, even the cost per unit area (60-70/m2) will be difficult for any thin-film photovoltaic technology to significantly undercut. This may make dislodgement likely only by appreciably higher energy conversion efficiency approaches. A silicon wafer-based cell able to capitalize on on-going cost reductions within the mainstream industry, but with an appreciably higher than present efficiency, might therefore provide the ultimate PV solution. With average selling prices of 156 mm quasi-square monocrystalline Si photovoltaic wafers recently approaching 1 (per wafer), wafers now provide clean, low cost templates for overgrowth of thin, wider bandgap high performance cells, nearly doubling silicon's ultimate efficiency potential. The range of possible Si-based tandem approaches is reviewed together with recent results and ultimate prospects.

  18. Fuzzy TOPSIS for Multiresponse Quality Problems in Wafer Fabrication Processes

    Directory of Open Access Journals (Sweden)

    Chiun-Ming Liu

    2013-01-01

    Full Text Available The quality characteristics in the wafer fabrication process are diverse, variable, and fuzzy in nature. How to effectively deal with multiresponse quality problems in the wafer fabrication process is a challenging task. In this study, the fuzzy technique for order preference by similarity to an ideal solution (TOPSIS, one of the fuzzy multiattribute decision-analysis (MADA methods, is proposed to investigate the fuzzy multiresponse quality problem in integrated-circuit (IC wafer fabrication process. The fuzzy TOPSIS is one of the effective fuzzy MADA methods for dealing with decision-making problems under uncertain environments. First, a fuzzy TOPSIS methodology is developed by considering the ambiguity between quality characteristics. Then, a detailed procedure for the developed fuzzy TOPSIS approach is presented to show how the fuzzy wafer fabrication quality problems can be solved. Real-world data is collected from an IC semiconductor company and the developed fuzzy TOPSIS approach is applied to find an optimal combination of parameters. Results of this study show that the developed approach provides a satisfactory solution to the wafer fabrication multiresponse problem. This developed approach can be also applied to other industries for investigating multiple quality characteristics problems.

  19. Microstructure studies of the grinding damage in monocrystalline silicon wafers

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yinxia; KANG Renke; GUO Dongming; JIN Zhuji

    2007-01-01

    The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components.Damage microstructures of the silicon wafers ground by the #325,#600, and #2000 grinding wheels was analyzed.The results show that many microcracks,fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel.No obvious microstructure change exists.The amorphous layer with a thickness of about 100 nm,microcracks, high density dislocations,and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel.For the wafer ground by the #2000 grinding wheel,an amorphous layer of about 30 nm thickness,a polycrystalline silicon layer,a few dislocations,and an elastic deformation layer exist.In general,with the decrease in grit size,the material removal mode changes from micro-fracture mode to ductile mode gradually.

  20. Wafer-level fabrication of arrays of glass lens doublets

    Science.gov (United States)

    Passilly, Nicolas; Perrin, Stéphane; Albero, Jorge; Krauter, Johann; Gaiffe, Olivier; Gauthier-Manuel, Ludovic; Froehly, Luc; Lullin, Justine; Bargiel, Sylwester; Osten, Wolfgang; Gorecki, Christophe

    2016-04-01

    Systems for imaging require to employ high quality optical components in order to dispose of optical aberrations and thus reach sufficient resolution. However, well-known methods to get rid of optical aberrations, such as aspherical profiles or diffractive corrections are not easy to apply to micro-optics. In particular, some of these methods rely on polymers which cannot be associated when such lenses are to be used in integrated devices requiring high temperature process for their further assembly and separation. Among the different approaches, the most common is the lens splitting that consists in dividing the focusing power between two or more optical components. In here, we propose to take advantage of a wafer-level technique, devoted to the generation of glass lenses, which involves thermal reflow in silicon cavities to generate lens doublets. After the convex lens sides are generated, grinding and polishing of both stack sides allow, on the first hand, to form the planar lens backside and, on the other hand, to open the silicon cavity. Nevertheless, silicon frames are then kept and thinned down to form well-controlled and auto-aligned spacers between the lenses. Subsequent accurate vertical assembly of the glass lens arrays is performed by anodic bonding. The latter ensures a high level of alignment both laterally and axially since no additional material is required. Thanks to polishing, the generated lens doublets are then as thin as several hundreds of microns and compatible with micro-opto-electro-systems (MOEMS) technologies since they are only made of glass and silicon. The generated optical module is then robust and provide improved optical performances. Indeed, theoretically, two stacked lenses with similar features and spherical profiles can be almost diffraction limited whereas a single lens characterized by the same numerical aperture than the doublet presents five times higher wavefront error. To demonstrate such assumption, we fabricated glass

  1. Behavior of piezoelectric wafer active sensor in various media

    Science.gov (United States)

    Kamas, Tuncay

    The dissertation addresses structural health monitoring (SHM) techniques using ultrasonic waves generated by piezoelectric wafer active sensors (PWAS) with an emphasis on the development of theoretical models of standing harmonic waves and guided waves. The focal objective of the research is to extend the theoretical study of electro-mechanical coupled PWAS as a resonator/transducer that interacts with standing and traveling waves in various media through electro-mechanical impedance spectroscopy (EMIS) method and guided wave propagation. The analytical models are developed and the coupled field finite element analysis (CF-FEA) models are simulated and verified with experiments. The dissertation is divided into two parts with respect to the developments in EMIS methods and GWP methods. In the first part, analytical and finite element models have been developed for the simulation of PWAS-EMIS in in-plane (longitudinal) and out-of-plane (thickness) mode. Temperature effects on free PWAS-EMIS are also discussed with respect to the in-plane mode. Piezoelectric material degradation on certain electrical and mechanical properties as the temperature increases is simulated by our analytical model for in-plane circular PWAS-EMIS that agrees well with the sets of experiments. Then the thickness mode PWAS-EMIS model was further developed for a PWAS resonator bonded on a plate-like structure. The latter analytical model was to determine the resonance frequencies for the normal mode expansion method through the global matrix method by considering PWAS-substrate and proof mass-PWAS-substrate models. The proof mass concept was adapted to shift the systems resonance frequencies in thickness mode. PWAS in contact with liquid medium on one of its surface has been analytically modeled and simulated the electro-mechanical response of PWAS with various liquids with different material properties such as the density and the viscosity. The second part discusses the guided wave propagation

  2. Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures

    Science.gov (United States)

    Aono, T.; Suzuki, K.; Kanamaru, M.; Okada, R.; Maeda, D.; Hayashi, M.; Isono, Y.

    2016-10-01

    This research demonstrates a newly developed anodic bonding-based wafer-level-packaging technique to simultaneously seal an accelerometer in the atmosphere and a gyroscope in a vacuum with a glass cap for micro-electromechanical systems sensors. It is necessary for the accelerometer, with a damping oscillator, to be sealed in the atmosphere to achieve a high-speed response. As the gyroscope can achieve high sensitivity with a large displacement at the resonant frequency without air-damping, the gyroscope must be sealed in a vacuum. The technique consists of three processing steps: the first bonding step in the atmosphere for the accelerometer, the pressure control step and the second bonding step in a vacuum for the gyroscope. The process conditions were experimentally determined to achieve higher shear strength at the interface of the packaging. The packaging performance of the accelerometer and gyroscope after wafer-level packaging was also investigated using a laser Doppler velocimeter at room temperature. The amplitude at the resonant frequency of the accelerometer was reduced by air damping, and the quality factor of the gyroscope showed a value higher than 1000. The reliability of the gyroscope was also confirmed by a thermal cyclic test and an endurance test at high humidity and high temperature.

  3. A method for wafer level hermetic packaging of SOI-MEMS devices with embedded vertical feedthroughs using advanced MEMS process

    Science.gov (United States)

    Mert Torunbalci, Mustafa; Emre Alper, Said; Akin, Tayfun

    2015-12-01

    This paper presents a novel, inherently simple, and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where a single SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a single glass cap wafer is used for hermetic encapsulation and routing metallization. Hermetic encapsulation can be achieved either with the silicon-glass anodic or Au-Si eutectic bonding techniques. The dies sealed with anodic and Au-Si eutectic bonding provide a low vertical feedthrough resistance around 50 Ω. Glass-to-silicon anodically and Au-Si eutectic bonded seals yield a very stable cavity pressure below 10 mTorr with thin-film getters, which are measured to be stable even after 311 d. The package pressure can be adjusted from 5 mTorr to 20 Torr by using different outgassing, cavity depth, and gettering options. The packaging yield is observed to be around 64% and 84% for the anodic and Au-Si eutectic packages, respectively. The average shear strength of the anodic and eutectic packages is measured to be higher than 17 MPa and 42 MPa, respectively. Temperature cycling, high temperature storage, and ultra-high temperature shock tests result in no degradation in the hermeticity of the packaged chips, proving perfect thermal reliability.

  4. Selective Au-Si eutectic bonding for Si-based MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, A.; Lehew, S.; Yu, C. [and others

    1995-05-22

    A novel method of fabricating three-dimensional silicon micro electromechanical systems (MEMS) is presented, using selectivity thin film deposited Au-Si eutectic bond pads. Utilizing this process, complicated structures such as microgrippers and microchannels are fabricated. Bond strengths are higher than the silicon fracture strength and the bond areas can be localized and aligned to the processed wafer. The process and the applications are described in this paper.

  5. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging.

    Science.gov (United States)

    Xie, Bo; Xing, Yonghao; Wang, Yanshuang; Chen, Jian; Chen, Deyong; Wang, Junbo

    2015-09-21

    This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

  6. Wafer-scale fabrication of polymer distributed feedback lasers

    DEFF Research Database (Denmark)

    Christiansen, Mads Brøkner; Schøler, Mikkel; Balslev, Søren

    2006-01-01

    The authors demonstrate wafer-scale, parallel process fabrication of distributed feedback (DFB) polymer dye lasers by two different nanoimprint techniques: By thermal nanoimprint lithography (TNIL) in polymethyl methacrylate and by combined nanoimprint and photolithography (CNP) in SU-8. In both...... techniques, a thin film of polymer, doped with rhodamine-6G laser dye, is spin coated onto a Borofloat glass buffer substrate and shaped into a planar waveguide slab with first order DFB surface corrugations forming the laser resonator. When optically pumped at 532 nm, lasing is obtained in the wavelength...... range between 576 and 607 nm, determined by the grating period. The results, where 13 laser devices are defined across a 10 cm diameter wafer substrate, demonstrate the feasibility of NIL and CNP for parallel wafer-scale fabrication of advanced nanostructured active optical polymer components...

  7. White-light interferometric microscopy for wafer defect inspection

    Science.gov (United States)

    Zhou, Renjie; Edwards, Christopher; Bryniarski, Casey; Dallmann, Marjorie F.; Popescu, Gabriel; Goddard, Lynford L.

    2015-03-01

    White-light imaging systems are free of laser-speckle. Thus, they offer high sensitivity for optical defect metrology, especially when used with interferometry based quantitative phase imaging. This can be a potential solution for wafer inspection beyond the 9 nm node. Recently, we built a white-light epi-illumination diffraction phase microscopy (epi-wDPM) for wafer defect inspection. The system is also equipped with an XYZ scanning stage and real-time processing. Preliminary results have demonstrated detection of 15 nm by 90 nm in a 9 nm node densely patterned wafer with bright-field imaging. Currently, we are implementing phase imaging with epi-wDPM for additional sensitivity.

  8. Laser assisted micro-welding of ultra-thin glass wafers

    Science.gov (United States)

    Hevonkorpi, V.; Lundén, H.; Määttänen, A.

    2016-03-01

    The use of glass in semiconductor industry has been growing during the past years and the grow is estimated to continue and accelerate considerably during the coming years. For efficient manufacturing, especially when using ultra-thin wafers, novel bonding technologies are needed. In this paper, a laser assisted additive free glass-glass welding technology is presented. Furthermore, the use of laser assisted welding to manufacture hermetic packages for optical components is investigated. The reliability and robustness of the weld and the process is verified by damp heat (85 °C at 85% RH) testing. A large quantity, one hundred samples, was tested to define the repeatability of the welding process. D263T, a glass type commonly used in manufacturing consumer products, was selected. Glass-glass welding proved to be a reliable bonding method offering a non-outgassing, room temperature bonding. In addition, it was verified that the weld is hermetic having a good resistance to high temperature and moisture conditions. No changes in the welding seams were observed during or after damp heat testing.

  9. 450mm wafer patterning with jet and flash imprint lithography

    Science.gov (United States)

    Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

    2013-09-01

    The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

  10. Disc resonator gyroscope fabrication process requiring no bonding alignment

    Science.gov (United States)

    Shcheglov, Kirill V. (Inventor)

    2010-01-01

    A method of fabricating a resonant vibratory sensor, such as a disc resonator gyro. A silicon baseplate wafer for a disc resonator gyro is provided with one or more locating marks. The disc resonator gyro is fabricated by bonding a blank resonator wafer, such as an SOI wafer, to the fabricated baseplate, and fabricating the resonator structure according to a pattern based at least in part upon the location of the at least one locating mark of the fabricated baseplate. MEMS-based processing is used for the fabrication processing. In some embodiments, the locating mark is visualized using optical and/or infrared viewing methods. A disc resonator gyroscope manufactured according to these methods is described.

  11. Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

    Energy Technology Data Exchange (ETDEWEB)

    Fong, Theodore E.

    2013-05-06

    The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technology further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.

  12. Simulations and Silicon Wafer Compatibility of a Voltage-Controlled Optical Switch Using ITO/NbOx

    Science.gov (United States)

    Burghardt, Kevin

    The story of optics and processing has always been on of silicon devices making strides faster and cheaper than optics. The idea of creating optical switches has been generally relegated to academic exercises or niche markets. This research takes a view of optical processing that is complimentary to silicon. Silicon wafers produce extremely dense, high quality devices but producing truly 3D integrated circuits has been a challenge. It would be advantageous to not need to bond wafers to create a 3D active structure. An argument for an optical switch that has a simple structure and uses industry established fabrication methods is given. The proposed switch uses the material indium tin oxide nanoparticles in niobum oxide glass (ITO/NbOx) as the active layer. The transmittance through this material is proportional to the electric field applied to it meaning the structure of a capacitor could be used to control it. It uses a metal for one plate of the capacitor and the ITO/NbOx as the other plate with the light running through ITO/NbO x plate. Each of the plates are separated from one another and surrounded by a dielectric material. Simulations show that silicon dioxide (SiO 2) can be used effectively to turn the ITO/NbOx into a light guide with a transmittance controllable using an applied voltage and that the proposed structure can be created using industry established wafer fabrication processes.

  13. Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays

    Science.gov (United States)

    Forsberg, Fredrik; Roxhed, Niclas; Fischer, Andreas C.; Samel, Björn; Ericsson, Per; Hoivik, Nils; Lapadatu, Adriana; Bring, Martin; Kittilsland, Gjermund; Stemme, Göran; Niklaus, Frank

    2013-09-01

    Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.

  14. High Performance Microaccelerometer with Wafer-level Hermetic Packaged Sensing Element and Continuous-time BiCMOS Interface Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Hyoungho [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of); Park, Sangjun [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of); Paik, Seung-Joon [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of); Choi, Byoung-doo [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of); Park, Yonghwa [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of); Lee, Sangmin [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of); Kim, Sungwook [SML Electronics, Inc. (Korea, Republic of); Lee, Sang Chul [SML Electronics, Inc. (Korea, Republic of); Lee, Ahra [SML Electronics, Inc. (Korea, Republic of); Yoo, Kwangho [SML Electronics, Inc. (Korea, Republic of); Lim, Jaesang [SML Electronics, Inc. (Korea, Republic of); Cho, Dong-il [School of Electrical Engineering and Computer Science, Seoul National University (Korea, Republic of)

    2006-04-01

    A microaccelerometer with highly reliable, wafer-level packaged MEMS sensing element and fully differential, continuous time, low noise, BiCMOS interface circuit is fabricated. The MEMS sensing element is fabricated on a (111)-oriented SOI wafer by using the SBM (Sacrificial/Bulk Micromachining) process. To protect the silicon structure of the sensing element and enhance the reliability, a wafer level hermetic packaging process is performed by using a silicon-glass anodic bonding process. The interface circuit is fabricated using 0.8 {mu}m BiCMOS process. The capacitance change of the MEMS sensing element is amplified by the continuous-time, fully-differential transconductance input amplifier. A chopper-stabilization architecture is adopted to reduce low-frequency noise including 1/f noise. The fabricated microaccelerometer has the total noise equivalent acceleration of 0.89 {mu}g/{radical}Hz, the bias instability of 490 {mu}g, the input range of {+-}10 g, and the output nonlinearity of {+-}0.5 %FSO.

  15. Low-cost bump bonding activities at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Vaehaenen, S; Tick, T; Campbell, M, E-mail: Sami.vaehaenen@cern.c [CERN, PH-ESE 1211 Geneva 23 (Switzerland)

    2010-11-15

    Conventional bumping processes used in the fabrication of hybrid pixel detectors for High Energy Physics (HEP) experiments use electroplating for Under Bump Metallization (UBM) and solder bump deposition. This process is laborious, involves time consuming photolithography and can only be performed using whole wafers. Electroplating has been found to be expensive when used for the low volumes which are typical of HEP experiments. In the low-cost bump bonding development work, electroless deposition technology of UBM is studied as an alternative to the electroplating process in the bump size / pitch window beginning from 20 {mu}m / 50 {mu}m. Electroless UBM deposition used in combination with solder transfer techniques has the potential to significantly lower the cost of wafer bumping without requiring increased wafer volumes. A test vehicle design of sensor and readout chip, having daisy chains and Kelvin bump structures, was created to characterize the flip chip process with electroless UBM. Two batches of test vehicle wafers were manufactured with different bump pad metallization. Batch no. 1 had AlSi(1%) metallization, which is similar to the one used on sensor wafers, and Batch no. 2 had AlSi(2%)Cu(1%) metallization, which is very similar to the one used on readout wafers. Electroless UBMs were deposited on both wafer batches. In addition, electroplated Ni UBM and SnPb solder bumps were grown on the test sensor wafers. Test assemblies were made by flip chip bonding the solder-bumped test sensors against the test readout chips with electroless UBMs. Electrical yields and individual joint resistances were measured from assemblies, and the results were compared to a well known reference technique based on electroplated solder bumps structures on both chips. The electroless UBMs deposited on AlSi(2%)Cu(1%) metallization showed excellent electrical yields and small tolerances in individual joint resistance. The results from the UBMs deposited on AlSi(1

  16. Optical coating uniformity of 200mm (8") diameter precut wafers

    Science.gov (United States)

    Burt, Travis C.; Fisher, Mark; Brown, Dean; Troiani, David

    2017-02-01

    Automated spectroscopic profiling (mapping) of a 200 mm diameter near infrared high reflector (centered at 1064 nm) are presented. Spatial resolution at 5 mm or less was achieved using a 5 mm × 1.5 mm monochromatic beam. Reflection changes of 1.0% across the wafer diameter were observed under s-polarized and p- polarized conditions. Redundancy was established for each chord by re-measuring the center of the wafer and reproducibility of approximately platform for angles of incidence in the range 5°stream processing.

  17. Wafer scale integration of catalyst dots into nonplanar microsystems

    DEFF Research Database (Denmark)

    Gjerde, Kjetil; Kjelstrup-Hansen, Jakob; Gammelgaard, Lauge;

    2007-01-01

    In order to successfully integrate bottom-up fabricated nanostructures such as carbon nanotubes or silicon, germanium, or III-V nanowires into microelectromechanical systems on a wafer scale, reliable ways of integrating catalyst dots are needed. Here, four methods for integrating sub-100-nm...... diameter nickel catalyst dots on a wafer scale are presented and compared. Three of the methods are based on a p-Si layer utilized as an in situ mask, an encapsulating layer, and a sacrificial window mask, respectively. All methods enable precise positioning of nickel catalyst dots at the end...

  18. Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gate

    DEFF Research Database (Denmark)

    Buron, Jonas Due; Mackenzie, David M. A.; Petersen, Dirch Hjorth

    2015-01-01

    spectroscopy. sigma(dc) and tau(SC) are directly extracted from Drude model fits to terahertz conductance spectra obtained in each pixel of 10 x 10 cm(2) maps with a 400 mu m step size. sigma(dc)- and tau(SC)-maps are translated into mu(drift) and N-S maps through Boltzmann transport theory for graphene charge......We demonstrate wafer-scale, non-contact mapping of essential carrier transport parameters, carrier mobility (mu(drift)), carrier density (N-S), DC sheet conductance (sigma(dc)), and carrier scattering time (tau(SC)) in CVD graphene, using spatially resolved terahertz time-domain conductance...

  19. Bond Boom

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The Ministry of Finance recently kick-started a pilot program allowing local governments of Shanghai and Shenzhen,and Zhejiang and Guangdong provinces to issue bonds for the first time.How will the new policy affect fiscal capacities of local governments and the broader economy? What else should the country do to build a healthy bond market? Economists and experts discussed these issues in an interview with the Shanghai Securities Journal.Edited excerpts follow.

  20. Bond Boom

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The Ministry of Finance recently kick-started a pilot program allowing local governments of Shanghai and Shenzhen, and Zhejiang and Guangdong provinces to issue bonds for the first time. How will the new policy affect fiscal capacities of local governments and the broader economy? What else should the country do to build a healthy bond market? Economists and experts discussed these issues in an interview with the ShanghaiSecuritiesJournal. Edited excerpts follow:

  1. The influence of wafer elasticity on acoustic waves during LIGA development.

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Aili

    2003-12-01

    During acoustically stimulated LIGA development, a wafer receives sound waves from both sides at a wide variety of incidence angles that vary in time depending on the orientation of the wafer relative to the multiple transducers that are typically actuated in a periodic sequence. It is important to understand the influence of these variables on the transmission of energy through the wafer as well as the induced motion of the wafer itself because these processes impact the induced acoustic streaming of the fluid within features, the mechanism presently thought responsible for enhanced development of LIGA features. In the present work, the impact of wafer elasticity on LIGA development is investigated. Transmission waves, wafer bending waves, and the related concepts such as critical bending frequency, mechanical impedance, coincidence, and resonance, are discussed. Supercritical-frequency incident waves induce supersonic bending waves in the wafer. Incident wave energy is channeled into three components, transmitted, reflected and energy deposited to the wafer, depending on the wafer material, thickness and wave incidence angle. Results show at normal incidence for a 1-mm PMMA wafer, about 47% of the wave energy is deposited in the wafer. The wafer gains almost half of the incident energy, a result that agrees well with the Bankert et a1 measurements. In LIGA development, transmitted waves may sometimes produce strong acoustic motion of the developer on the wafer backside, especially for the so-called coincidence case in which almost all incident wave energy transfers to the backside. Wafer bending waves cause wafer oscillation at high frequency, promoting the development process, but features shaking may weaken their attachments to the substrate. Resonance is not likely for the entire wafer, but may occur in short and wide wafer feature columns, which are least likely to break away from the substrate, perhaps resulting in good agitation of the fluid in adjacent

  2. FeCl2-promoted cleavage of the unactivated C-C bond of alkylarenes and polystyrene: direct synthesis of arylamines.

    Science.gov (United States)

    Qin, Chong; Shen, Tao; Tang, Conghui; Jiao, Ning

    2012-07-09

    Ironing it out: an efficient and convenient nitrogenation strategy involving C-C bond cleavage for the straightforward synthesis of versatile arylamines is presented. Various alkyl azides and alkylarenes, including the common industrial by-product cumene, react using this protocol. Moreover, this method provides a potential strategy for the degradation of polystyrene.

  3. A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.

    Science.gov (United States)

    Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

    2014-12-16

    This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in "H" type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than -0.01% F.S/°C in the range of -40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.

  4. A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

    Directory of Open Access Journals (Sweden)

    Zhenyu Luo

    2014-12-01

    Full Text Available This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.

  5. A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

    Science.gov (United States)

    Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

    2014-01-01

    This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S. PMID:25521385

  6. Protection of MOS capacitors during anodic bonding

    Science.gov (United States)

    Schjølberg-Henriksen, K.; Plaza, J. A.; Rafí, J. M.; Esteve, J.; Campabadal, F.; Santander, J.; Jensen, G. U.; Hanneborg, A.

    2002-07-01

    We have investigated the electrical damage by anodic bonding on CMOS-quality gate oxide and methods to prevent this damage. n-type and p-type MOS capacitors were characterized by quasi-static and high-frequency CV-curves before and after anodic bonding. Capacitors that were bonded to a Pyrex wafer with 10 μm deep cavities enclosing the capacitors exhibited increased leakage current and interface trap density after bonding. Two different methods were successful in protecting the capacitors from such damage. Our first approach was to increase the cavity depth from 10 μm to 50 μm, thus reducing the electric field across the gate oxide during bonding from approximately 2 × 105 V cm-1 to 4 × 104 V cm-1. The second protection method was to coat the inside of a 10 μm deep Pyrex glass cavity with aluminium, forming a Faraday cage that removed the electric field across the cavity during anodic bonding. Both methods resulted in capacitors with decreased interface trap density and unchanged leakage current after bonding. No change in effective oxide charge or mobile ion contamination was observed on any of the capacitors in the study.

  7. Face-to-face transfer of wafer-scale graphene films.

    Science.gov (United States)

    Gao, Libo; Ni, Guang-Xin; Liu, Yanpeng; Liu, Bo; Castro Neto, Antonio H; Loh, Kian Ping

    2014-01-01

    Graphene has attracted worldwide interest since its experimental discovery, but the preparation of large-area, continuous graphene film on SiO2/Si wafers, free from growth-related morphological defects or transfer-induced cracks and folds, remains a formidable challenge. Growth of graphene by chemical vapour deposition on Cu foils has emerged as a powerful technique owing to its compatibility with industrial-scale roll-to-roll technology. However, the polycrystalline nature and microscopic roughness of Cu foils means that such roll-to-roll transferred films are not devoid of cracks and folds. High-fidelity transfer or direct growth of high-quality graphene films on arbitrary substrates is needed to enable wide-ranging applications in photonics or electronics, which include devices such as optoelectronic modulators, transistors, on-chip biosensors and tunnelling barriers. The direct growth of graphene film on an insulating substrate, such as a SiO2/Si wafer, would be useful for this purpose, but current research efforts remain grounded at the proof-of-concept stage, where only discontinuous, nanometre-sized islands can be obtained. Here we develop a face-to-face transfer method for wafer-scale graphene films that is so far the only known way to accomplish both the growth and transfer steps on one wafer. This spontaneous transfer method relies on nascent gas bubbles and capillary bridges between the graphene film and the underlying substrate during etching of the metal catalyst, which is analogous to the method used by tree frogs to remain attached to submerged leaves. In contrast to the previous wet or dry transfer results, the face-to-face transfer does not have to be done by hand and is compatible with any size and shape of substrate; this approach also enjoys the benefit of a much reduced density of transfer defects compared with the conventional transfer method. Most importantly, the direct growth and spontaneous attachment of graphene on the underlying

  8. Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

    Science.gov (United States)

    Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.; Mehdi, Imran; Thomas, Bertrand

    2013-01-01

    Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together.

  9. Bond strength with custom base indirect bonding techniques.

    Science.gov (United States)

    Klocke, Arndt; Shi, Jianmin; Kahl-Nieke, Bärbel; Bismayer, Ulrich

    2003-04-01

    Different types of adhesives for indirect bonding techniques have been introduced recently. But there is limited information regarding bond strength with these new materials. In this in vitro investigation, stainless steel brackets were bonded to 100 permanent bovine incisors using the Thomas technique, the modified Thomas technique, and light-cured direct bonding for a control group. The following five groups of 20 teeth each were formed: (1) modified Thomas technique with thermally cured base composite (Therma Cure) and chemically cured sealant (Maximum Cure), (2) Thomas technique with thermally cured base composite (Therma Cure) and chemically cured sealant (Custom I Q), (3) Thomas technique with light-cured base composite (Transbond XT) and chemically cured sealant (Sondhi Rapid Set), (4) modified Thomas technique with chemically cured base adhesive (Phase II) and chemically cured sealant (Maximum Cure), and (5) control group directly bonded with light-cured adhesive (Transbond XT). Mean bond strengths in groups 3, 4, and 5 were 14.99 +/- 2.85, 15.41 +/- 3.21, and 13.88 +/- 2.33 MPa, respectively, and these groups were not significantly different from each other. Groups 1 (mean bond strength 7.28 +/- 4.88 MPa) and 2 (mean bond strength 7.07 +/- 4.11 MPa) showed significantly lower bond strengths than groups 3, 4, and 5 and a higher probability of bond failure. Both the original (group 2) and the modified (group 1) Thomas technique were able to achieve bond strengths comparable to the light-cured direct bonded control group.

  10. 3D Align overlay verification using glass wafers

    NARCIS (Netherlands)

    Smeets, E.M.J.; Bijnen, F.C.G.; Slabbekoorn, J.; Van Zeijl, H.W.

    2004-01-01

    In the MEMS world, increasing attention is being given to 3D devices requiring dual-sided processing. This requires lithography tools that are able to align a wafer to both its back side as front side. Overlay describes how well front and back side layers are positioned with respect to each other. C

  11. 3D Align overlay verification using glass wafers

    NARCIS (Netherlands)

    Smeets, E.M.J.; Bijnen, F.C.G.; Slabbekoorn, J.; Van Zeijl, H.W.

    2004-01-01

    In the MEMS world, increasing attention is being given to 3D devices requiring dual-sided processing. This requires lithography tools that are able to align a wafer to both its back side as front side. Overlay describes how well front and back side layers are positioned with respect to each other.

  12. Fatigue Life Analysis of Cantilever Probe on Wafer Test

    Directory of Open Access Journals (Sweden)

    Hsiao Te-Ching

    2016-01-01

    Full Text Available This research utilizes the finite element analysis software (ANSYS to stimulate the different probe material quality (tungsten, SUS304 stainless steel, SUS316L stainless steel and SKD11 tool steel, respectively during wafer tests. Under a room temperature of (25°C, the stress and fatigue life (cycles of probing test of the cantilever probe were measured with an OverDriver (OD of 20µm, 40µm, 50µm, 60µm and 80µm, respectively. First, to obtain the magnitude of pinpoint shift of the probe under wafer test and the OverDriver is 50µm. And, calculate the fatigue life of the probe. Then, a probe model with the same characteristics as the experiment is created and the probe fatigue life analyzed with the ANSYS. After the reliability of the model is ascertained, the wafer tests of different probe materials are stimulated under different OverDriver circumstances to calculate its stress and fatigue life. The results indicate that the greatest stress measured during the wafer test of the tungsten, SUS304 stainless steel, SUS316L stainless steel and SKD11 tool steel cantilever probe are all smaller than the yield strength, and the fatigue life could reach over one hundred K cycles. When catalogued by the cantilever probe fatigue life during one hundred K cycles, the life span, in order, is tungsten < SUS316L stainless steel < SUS304 stainless steel < SKD11 tool steel.

  13. Wafer-scale nanostructure formation inside vertical nano-pores

    NARCIS (Netherlands)

    Berenschot, Johan W.; Sun, Xingwu; Le The, Hai; Tiggelaar, Roald M.; de Boer, Meint J.; Eijkel, Jan C.T.; Gardeniers, Johannes G.E.; Tas, Niels Roelof; Sarajlic, Edin

    We propose a wafer-scale technique for nanostructure formation inside vertically oriented, through-membrane nano-pores. It uses 50 nm monocrystalline silicon pillars as a mold, embedded in a silicon nitride membrane formed in an innovative step. The proposed technique paves the way towards advanced

  14. Wafer scale coating of polymer cantilever fabricated by nanoimprint lithography

    DEFF Research Database (Denmark)

    Greve, Anders; Dohn, Søren; Keller, Stephan Urs

    2010-01-01

    Microcantilevers can be fabricated in TOPAS by nanoimprint lithography, with the dimensions of 500 ¿m length 4.5 ¿m thickness and 100 ¿m width. By using a plasma polymerization technique it is possible to selectively functionalize individually cantilevers with a polymer coating, on wafer scale...

  15. 3D Align overlay verification using glass wafers

    NARCIS (Netherlands)

    Smeets, E.M.J.; Bijnen, F.C.G.; Slabbekoorn, J.; Van Zeijl, H.W.

    2004-01-01

    In the MEMS world, increasing attention is being given to 3D devices requiring dual-sided processing. This requires lithography tools that are able to align a wafer to both its back side as front side. Overlay describes how well front and back side layers are positioned with respect to each other. C

  16. Wafer-scale nanostructure formation inside vertical nano-pores

    NARCIS (Netherlands)

    Berenschot, Johan W.; Sun, Xingwu; Le The, Hai; Tiggelaar, Roald M.; de Boer, Meint J.; Eijkel, Jan C.T.; Gardeniers, Johannes G.E.; Tas, Niels Roelof; Sarajlic, Edin

    2017-01-01

    We propose a wafer-scale technique for nanostructure formation inside vertically oriented, through-membrane nano-pores. It uses 50 nm monocrystalline silicon pillars as a mold, embedded in a silicon nitride membrane formed in an innovative step. The proposed technique paves the way towards advanced

  17. Method for reuse of wafers for growth of vertically-aligned wire arrays

    Science.gov (United States)

    Spurgeon, Joshua M; Plass, Katherine E; Lewis, Nathan S; Atwater, Harry A

    2013-06-04

    Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.

  18. Novel Bonding technologies for wafer-level transparent packaging of MOEMS

    CERN Document Server

    Kirchberger, H; Wimpliger, M

    2008-01-01

    Depending on the type of Micro-Electro-Mechanical System (MEMS), packaging costs are contributing up to 80% of the total device cost. Each MEMS device category, its function and operational environment will individually dictate the packaging requirement. Due to the lack of standardized testing procedures, the reliability of those MEMS packages sometimes can only be proven by taking into consideration its functionality over lifetime. Innovation with regards to cost reduction and standardization in the field of packaging is therefore of utmost importance to the speed of commercialisation of MEMS devices. Nowadays heavily driven by consumer applications the MEMS device market is forecasted to enjoy a compound annual growth rate (CAGR) above 13%, which is when compared to the IC device market, an outstanding growth rate. Nevertheless this forecasted value can drift upwards or downwards depending on the rate of innovation in the field of packaging. MEMS devices typically require a specific fabrication process wher...

  19. Evaluation of wafer bonded CMUTs with rectangular membranes featuring high fill factor.

    Science.gov (United States)

    Wong, Serena H; Kupnik, Mario; Zhuang, Xuefeng; Lin, Der-Song; Butts-Pauly, Kim; Khuri-Yakub, Butrus T

    2008-09-01

    Increasing fill factor is one design approach used to increase average output displacement, output pressure, and sensitivity of capacitive micromachined ultrasonic transducers (CMUTs). For rectangular cells, the cell-to-cell spacing and the aspect ratio determine the fill factor. In this paper, we explore the effects of these parameters on performance, in particular the nonuniformity of collapse voltage between neighboring cells and presence of higher order modes in air or immersed operation. We used a white light interferometer to measure nonuniformity in deflection between neighboring cells. We found that reducing the cell-to-cell spacing could cause bending of the center support post, which amplifies nonuniformities in collapse voltage to 18.4% between neighboring cells. Using a 2-D finite element model (FEM), we found that for our designs, increasing the support post width to 1.67 times the membrane thickness alleviated the post bending problem. Using impedance and interferometer measurements to observe the effects of aspect ratio on higher order modes, we found that the (1,3) modal frequency approached the (1,1) modal frequency as the aspect ratio of the rectangles increased. In air operation, under continuous wave (CW) excitation at the center frequency, the rectangular cells behaved in the (1,1) mode. In immersion, because of dispersive guided modes, these cells operated in a higher order mode when excited with a CW signal at the center frequency. This contributed to a loss of output pressure; for this reason our rectangular design was unsuitable for CW operation in immersion.

  20. Inserting CO2 into Aryl C-H Bonds of Metal-Organic Frameworks: CO2 Utilization for Direct Heterogeneous C-H Activation.

    Science.gov (United States)

    Gao, Wen-Yang; Wu, Haifan; Leng, Kunyue; Sun, Yinyong; Ma, Shengqian

    2016-04-25

    Described for the first time is that carbon dioxide (CO2 ) can be successfully inserted into aryl C-H bonds of the backbone of a metal-organic framework (MOF) to generate free carboxylate groups, which serve as Brønsted acid sites for efficiently catalyzing the methanolysis of epoxides. The work delineates the very first example of utilizing CO2 for heterogeneous C-H activation and carboxylation reactions on MOFs, and opens a new avenue for CO2 chemical transformations under mild reaction conditions.

  1. Effect of Grinding Process on The Wafer Surface Roughness%磨削工艺对晶片表面粗糙度的影响

    Institute of Scientific and Technical Information of China (English)

    张文斌; 王仲康

    2015-01-01

    The grinding process directly affects the surface quality of silicon wafer quality param eters, am ong these param eters,surface roughness is one of the im portant index in differential geom etry param eters of the silicon wafer quality. Effect of grinding wheel type,the wheel infeed rate grinding process on the wafer surface roughness are analyzed.%磨削工艺直接影响着磨削后晶片的参数,在这些参数中,表面粗糙度是鉴别晶片几何参数好坏的重要指标之一。分析了磨削工艺中砂轮粒度、砂轮进给速度对表面粗糙度的影响。

  2. Direct, simple derivatization of disulfide bonds in proteins with organic mercury in alkaline medium without any chemical pre-reducing agents

    Energy Technology Data Exchange (ETDEWEB)

    Campanella, Beatrice; Onor, Massimo [National Research Council of Italy, C.N.R., Istituto di Chimica dei Composti Organo Metallici-ICCOM- UOS Pisa, Area di Ricerca, Via G. Moruzzi 1, 56124 Pisa (Italy); Ferrari, Carlo [National Research Council of Italy, C.N.R., Istituto Nazionale di Ottica, INO-UOS Pisa, Area di Ricerca, Via G. Moruzzi 1, 56124 Pisa (Italy); D’Ulivo, Alessandro [National Research Council of Italy, C.N.R., Istituto di Chimica dei Composti Organo Metallici-ICCOM- UOS Pisa, Area di Ricerca, Via G. Moruzzi 1, 56124 Pisa (Italy); Bramanti, Emilia, E-mail: bramanti@pi.iccom.cnr.it [National Research Council of Italy, C.N.R., Istituto di Chimica dei Composti Organo Metallici-ICCOM- UOS Pisa, Area di Ricerca, Via G. Moruzzi 1, 56124 Pisa (Italy)

    2014-09-16

    Highlights: • A simple procedure for the derivatization of proteins disulfide bonds. • Cysteine groups in several proteins derivatised with pHMB in alkaline media. • 75–100% labelling of cysteines in proteins with pHMB. - Abstract: In this work we have studied the derivatization of protein disulfide bonds with p-Hydroxymercurybenzoate (pHMB) in strong alkaline medium without any preliminary reduction. The reaction has been followed by the determination of the protein–pHMB complex using size exclusion chromatography coupled to a microwave/UV mercury oxidation system for the on-line oxidation of free and protein-complexed pHMB and atomic fluorescence spectrometry (SEC–CVG–AFS) detection. The reaction has been optimized by an experimental design using lysozyme as a model protein and applied to several thiolic proteins. The proposed method reports, for the first time, that it is possible to label 75–100% cysteines of proteins and, thus, to determine thiolic proteins without the need of any reducing step to obtain reduced -SH groups before mercury labelling. We obtained a detection limit of 100 nmol L{sup −1} based on a signal-to-noise ratio of 3 for unbound and complexed pHMB, corresponding to a detection limit of proteins ranged between 3 and 360 nmol L{sup −1}, depending on the number of cysteines in the protein sequence.

  3. Realization of ultrafast and high-quality anodic bonding using a non-contact scanning electrode

    Science.gov (United States)

    Wu, Jim-Wei; Yang, Chii-Rong; Huang, Mao-Jung; Yang, Cheng-Hao; Huang, Che-Yi

    2013-07-01

    The anodic bonding technique, which is primarily used in glass to silicon wafer bonding, has been extensively used in microelectromechanical systems (MEMS) for the packaging of microsensors and microactuators. When the bonding voltage is applied, the bonded region instantly occurs at the contact point of the cathode with the glass. The geometric shape or arranged pattern of the cathode electrode significantly affects the bonding quality, particularly the gas-trapping at the bonded interface and the bonding time. This paper presents a novel anodic bonding process, in which the non-contacting and rotating electrode with radial lines is used as the cathode for scan bonding with arc-discharge assistance. The experimental results show that a bonding ratio of 99.98% and an average bonding strength of 15.45 MPa for a 4-inch silicon/glass bonded pair can be achieved in a 17 s bonding time by using a cathode electrode with eight 45 included-angle radial lines at a rotation speed of 0.45 rpm, a non-contact gap of 120 µm, a bonding voltage of 900 V and a bonding temperature of 400 °C. This ultrafast and high-quality anodic bonding has been synchronously realized under this scan bonding technique.

  4. Peptide and protein loading into porous silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Prestidge, C.A.; Barnes, T.J.; Mierczynska-Vasilev, A.; Kempson, I.; Peddie, F. [Ian Wark Research Institute, University of South Australia, Mawson Lakes (Australia); Barnett, C. [Medica Ltd, Malvern, Worcestershire, UK WR14 3SZ (United Kingdom)

    2008-02-15

    The influence of peptide/protein size and hydrophobicity on the physical and chemical aspects of loading within porous silicon (pSi) wafer samples has been determined using Atomic Force Microscopy (AFM) and Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). Both Gramicidin A (a small hydrophobic peptide) and Papain (a larger hydrophilic protein) were observed (ToF-SIMS) to penetrate across the entire pSi layer, even at low loading levels. AFM surface imaging of pSi wafers during peptide/protein loading showed that surface roughness increased with Papain loading, but decreased with Gramicidin A loading. For Papain, the loading methodology was also found to influence loading efficiency. These differences indicate more pronounced surface adsorption of Papain. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Switchable static friction of piezoelectric composite—silicon wafer contacts

    Science.gov (United States)

    van den Ende, D. A.; Fischer, H. R.; Groen, W. A.; van der Zwaag, S.

    2013-04-01

    The meso-scale surface roughness of piezoelectric fiber composites can be manipulated by applying an electric field to a piezocomposite with a polished surface. In the absence of an applied voltage, the tips of the embedded piezoelectric ceramic fibers are below the surface of the piezocomposite and a silicon wafer counter surface rests solely on the matrix region of the piezocomposite surface. When actuated, the piezoelectric ceramic fibers protrude from the surface and the wafer rests solely on these protrusions. A threefold decrease in engineering static friction coefficient upon actuation of the piezocomposite was observed: from μ* = 1.65 to μ* = 0.50. These experimental results could be linked to the change in contact surface area and roughness using capillary adhesion theory, which relates the adhesive force to the number and size of the contacting asperities for the different surface states.

  6. Surface shape control of the workpiece in a double-spindle triple-workstation wafer grinder

    Science.gov (United States)

    Xianglong, Zhu; Renke, Kang; Zhigang, Dong; Guang, Feng

    2011-10-01

    Double-spindle triple-workstation (DSTW) ultra precision grinders are mainly used in production lines for manufacturing and back thinning large diameter (>= 300 mm) silicon wafers for integrated circuits. It is important, but insufficiently studied, to control the wafer shape ground on a DSTW grinder by adjusting the inclination angles of the spindles and work tables. In this paper, the requirements of the inclination angle adjustment of the grinding spindles and work tables in DSTW wafer grinders are analyzed. A reasonable configuration of the grinding spindles and work tables in DSTW wafer grinders are proposed. Based on the proposed configuration, an adjustment method of the inclination angle of grinding spindles and work tables for DSTW wafer grinders is put forward. The mathematical models of wafer shape with the adjustment amount of inclination angles for both fine and rough grinding spindles are derived. The proposed grinder configuration and adjustment method will provide helpful instruction for DSTW wafer grinder design.

  7. Bond Strength of Resin Cements to Dentin Using New Universal Bonding Agents

    Science.gov (United States)

    2015-06-30

    indications. The goal of dental adhesives is to provide an equally effective bond to two hard tissues of different nature (Van Meerbeek, 2011). Bonding...tests: An analysis of 50 investigations on bond strength. Quint Int. 1997;28:717–723. Bisco. “All-Bond Universal Light-Cured Dental Adhesive ...Dentsply. “Prime & Bond Elect Universal Dental Adhesive Directions for Use.” Available at: http://www.dentsply.com.au/secure/downloadfile.asp?pid

  8. Towards reduced impact of EUV mask defectivity on wafer

    Science.gov (United States)

    Jonckheere, R.; Van den Heuvel, D.; Pacco, A.; Pollentier, I.; Baudemprez, B.; Jehoul, C.; Hermans, J.; Hendrickx, E.

    2014-07-01

    The defectivity challenges of extreme ultraviolet (EUV) masks, that need to be addressed before production readiness of EUV lithography is assured from the mask perspective, are twofold. First, the EUV-specific defect type relating to the multi-layer (ML) mirror, the so-called ML-defects, require to become more detectable than they are printable. This not only requires proven capability of blank inspection, but also the existence of satisfactory printability mitigation strategies (comprising avoidance, pattern shift methodology, compensation repair). Both these assets need to become available within the mask supply chain, as there is little that can still be done about such residual defects at the wafer fab. In a production phase, finding unexpected printing ML-defects is unacceptable. It is shown how the specific way-of-working in use at imec, starting from the printed wafer, contributes to related learning and identification of remaining gaps, in getting this issue fully dealt with. The second challenge relates to particle contamination during use of the reticle at the wafer fab. Avoiding overlaycritical particles on the backside of NXE3100 reticles is facilitated by the established way-of-working. Minimizing the occurrence of particles "hopping" between reticles via the electrostatic clamp of the scanner (so-called clamp-traveling particles) is a major driver for appropriate mask cleaning. The latter may not have negative impact by frequent use, in view of the highly vulnerable EUV mask stack, and especially for the present "black-border" solution in which the ML is etched away at the image border on the reticle. A lot of effort is spent into monitoring of NXE3100 reticles for particle adders on the pattern side. This is realized by comparing past and present mask defect maps obtained by inspection of printed wafers with subsequent repeater analysis.

  9. Model of Grain Depth of Cut in Wafer Rotation Grinding Method for Silicon Wafers%工件旋转法磨削硅片的磨粒切削深度模型

    Institute of Scientific and Technical Information of China (English)

    高尚; 王紫光; 康仁科; 董志刚; 张璧

    2016-01-01

    During the integrated circuit manufacturing process, ultra-precision grinding based on the principle of wafer rotation grinding is currently utilized as a major method in flattening and back-thinning of large-size silicon wafers. Grain depth of cut is a function to characterize the overall grinding conditions and has direct effect on the surface/subsurface quality of ground workpieces. Modelling of grain depth of cut of workpiece rotation grinding has great significance in grinding of silicon wafers with high efficiency and high surface layer quality. Based on the analysis of relative motion between cup-type grinding wheel, abrasives and silicon water in wafer rotation grinding, the model of grain depth of cut is proposed and the mathematical relationship among grain depth of cut, dimensions of cup-type grinding wheel, grinding parameters and radical distance is presented. With the proposed model, the subsurface damage distributions along the radical direction of ground silicon wafers and the effects of machining conditions on subsurface damage in wafer rotation grinding are then analyzed, and the grinding experiments are conducted to verify the model. The experiment results show that the subsurface damage depth decreases gradually along radical direction from edge to centre of the ground wafer surface. The subsurface damage depth increases with the increase in wheel grain size, wafer rotation speed, wheel feedrate and the decrease in wheel rotation speed. The experiment results agree well with the model predictions.%半导体器件制造中,工件旋转法磨削是大尺寸硅片正面平坦化加工和背面薄化加工最广泛应用的加工方法。磨粒切削深度是反映磨削条件综合作用的磨削参量,其大小直接影响磨削工件的表面/亚表面质量,研究工件旋转法磨削的磨粒切削深度模型对于实现硅片高效率高质量磨削加工具有重要的指导意义。通过分析工件旋转法磨削过程中砂轮、

  10. Wafer-shape based in-plane distortion predictions using superfast 4G metrology

    Science.gov (United States)

    van Dijk, Leon; Mileham, Jeffrey; Malakhovsky, Ilja; Laidler, David; Dekkers, Harold; Van Elshocht, Sven; Anberg, Doug; Owen, David M.; van Haren, Richard

    2017-03-01

    With the latest immersion scanners performing at the sub-2 nm overlay level, the non-lithography contributors to the OnProduct-Overlay budget become more and more dominant. Examples of these contributors are etching, thin film deposition, Chemical-Mechanical Planarization and thermal anneal. These processes can introduce stress or stress changes in the thin films on top of the silicon wafers, resulting in significant wafer grid distortions. High-order wafer alignment (HOWA) is the current ASML solution for correcting wafers with a high order grid distortion introduced by non-lithographic processes, especially when these distortions vary from wafer-to-wafer. These models are currently successfully applied in high volume production at several semiconductor device manufacturers. An important precondition is that the wafer distortions remain global as the polynomial-based HOWA models become less effective for very local distortions. Wafer-shape based feed forward overlay corrections can be a possible solution to overcome this challenge. Thin film stress typically has an impact on the unclamped, free-form shape of the wafers. When an accurate relationship between the wafer shape and in-plane distortion (IPD) after clamping is established then feedforward overlay control can be enabled. In this work we assess the capability of wafer-shape based IPD predictions via a controlled experiment. The processinduced IPDs are accurately measured on the ASML TWINSCANTM system using its SMASH alignment system and the wafer shapes are measured on the Superfast 4G inspection system. In order to relate the wafer shape to the IPD we have developed a prediction model beyond the standard Stoney approximation. The match between the predicted and measured IPD is excellent ( 1-nm), indicating the feasibility of using wafer shape for feed-forward overlay control.

  11. Novel Fabrication Techniques for Wafer-Scale Graphene Drum NanoElectroMechanical Resonators

    Science.gov (United States)

    Lee, Sunwoo; Chen, Changyao; Deshpande, Vikram V.; Lee, Gwan Hyoung; Storch, Isaac; Zhang, Congchun; Yu, Young-Jun; Kim, Philip; McEuen, Paul; Hone, James

    2012-02-01

    Graphene NanoElectroMechanical Systems (NEMS) have shown excellent mass sensitivity as well as resonant and oscillatory behaviors that are desirable in mass sensors and active elements in Radio Frequency Integrated Circuit (RFIC) design. Out of many structures proposed for graphene NEMS, it has been recently shown that a drum resonator exhibits higher Q-factor than other structures such as a bar resonator. However, fabricating a large array of drum graphene resonator has been problematic because liquid or gas can be trapped inside the drum. Such issues led to designs with a hole in the center of a drum or with a drainage trench, either at the cost of additional lithography step or lowered Q-factor. Here, we demonstrate two novel fabrication methods that are free of the trapping without any compromise in additional lithography step or Q-factor degradation. In one method, wafer scale graphene is dry-stamped on prefabricated leads, holes and local gates. In the other method, an resist strip with a circular hole at the center holds graphene underneath. I will discuss direct electrical readout and characterization of devices using these two methods. These drum structures may provide a practical way to achieve wafer scale high Q graphene NEMS.

  12. A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers.

    Science.gov (United States)

    Iuchi, T; Toyoda, Y; Seo, T

    2013-02-01

    We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on simulation and experimental results, we developed two radiation thermometry methods for silicon wafers: one is based on the polarized emissivity-invariant condition and the other is based on the relationship between the ratio of the p- and s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9-4.8 μm), irrespective of the dielectric film thickness and the substrate resistivity, which depends on the dopant concentration. The temperature measurements were estimated to have expanded uncertainties (k = 2) of less than 5 °C. With a view to practically applying these methods, we investigated a method to reduce the intense background radiance produced by high-intensity heating lamps. We found that the background radiance can be greatly reduced by using a radiometer that is sensitive to wavelengths of 4.5 or 4.8 μm and suitable geometrical arrangements of a quartz plate. This opens up the possibility of using the two proposed radiation thermometry methods in practical applications.

  13. Wafer-level chip-scale packaging analog and power semiconductor applications

    CERN Document Server

    Qu, Shichun

    2015-01-01

    This book presents a state-of-art and in-depth overview in analog and power WLCSP design, material characterization, reliability, and modeling. Recent advances in analog and power electronic WLCSP packaging are presented based on the development of analog technology and power device integration. The book covers in detail how advances in semiconductor content, analog and power advanced WLCSP design, assembly, materials, and reliability have co-enabled significant advances in fan-in and fan-out with redistributed layer (RDL) of analog and power device capability during recent years. Along with new analog and power WLCSP development, the role of modeling is a key to assure successful package design. An overview of the analog and power WLCSP modeling and typical thermal, electrical, and stress modeling methodologies is also provided. This book also: ·         Covers the development of wafer-level power discrete packaging with regular wafer-level design concepts and directly bumping technology ·    �...

  14. Hydrogen bonds as structural directive towards unusual polynuclear complexes: synthesis, structure, and magnetic properties of copper(II) and nickel(II) complexes with a 2-aminoglucose ligand.

    Science.gov (United States)

    Burkhardt, Anja; Spielberg, Eike T; Simon, Sascha; Görls, Helmar; Buchholz, Axel; Plass, Winfried

    2009-01-01

    The reaction of benzyl 2-amino-4,6-O-benzylidene-2-deoxy-alpha-D-glucopyranoside (HL) with the metal salts Cu(ClO(4))(2)6 H(2)O and Ni(NO(3))(2)6 H(2)O affords via self-assembly a tetranuclear mu(4)-hydroxido bridged copper(II) complex [(mu(4)-OH)Cu(4)(L)(4)(MeOH)(3)(H(2)O)](ClO(4))(3) (1) and a trinuclear alcoholate bridged nickel(II) complex [Ni(3)(L)(5)(HL)]NO(3) (2), respectively. Both complexes crystallize in the acentric space group P2(1). The X-ray crystal structure reveals the rare (mu(4)-OH)Cu(4)O(4) core for complex 1 which is mu(2)-alcoholate bridged. The copper(II) ions possess a distorted square-pyramidal geometry with an [NO(4)] donor set. The core is stabilized by hydrogen bonding between the coordinating amino group of the glucose backbone and the benzylidene protected oxygen atom O4 of a neighboring {Cu(L)} fragment as hydrogen-bond acceptor. For complex 2 an [N(4)O(2)] donor set is observed at the nickel(II) ions with a distorted octahedral geometry. The trinuclear isosceles Ni(3) core is bridged by mu(3)-alcoholate O3 oxygen atoms of two glucose ligands. The two short edges are capped by mu(2)-alcoholate O3 oxygen atoms of the two ligands coordinated at the nickel(II) ion at the vertex of these two edges. Along the elongated edge of the triangle a strong hydrogen bond (244 pm) between the O3 oxygen atoms of ligands coordinating at the two relevant nickel(II) ions is observed. The coordinating amino groups of the these two glucose ligands are involved in additional hydrogen bonds with O4 oxygen atoms of adjacent ligands further stabilizing the trinuclear core. The carbohydrate backbones in all cases adopt the stable (4)C(1) chair conformation and exhibit the rare chitosan-like trans-2,3-chelation. Temperature dependent magnetic measurements indicate an overall antiferromagnetic behavior for complex 1 with J(1)=-260 and J(2)=-205 cm(-1) (g=2.122). Compound 2 is the first ferromagnetically coupled trinuclear nickel(II) complex with J(A)=16.4 and J

  15. Integration of robust fluidic interconnects using metal to glass anodic bonding

    Science.gov (United States)

    Briand, Danick; Weber, Patrick; de Rooij, Nicolaas F.

    2005-09-01

    This paper reports on the encapsulation of a piezoresistive silicon/Pyrex liquid flow sensor using metal to glass anodic bonding. The bonding technique allowed integrating robust metallic microfluidic interconnects and eliminating the use of glue and O-rings. The bonding parameters of a silicon/Pyrex/metal triple stack were chosen to minimize the residual stress and to obtain a strong and liquid tight bonding interface. The silicon/Pyrex liquid flow sensor was successfully bonded to metallic plates of Kovar and Alloy 42, on which tubes were fixed and a printed circuit board (PCB) was integrated. A post-bonding annealing procedure was developed to reduce the residual bonding stress. The characteristics of the encapsulated liquid flow sensor, such as the temperature coefficient of sensitivity, fulfilled the specifications. Wafer level packaging using metal to glass anodic bonding was considered to reduce the packaging size and cost.

  16. Nanoneedles based on porous silicon for chip bonding with self assembly capability

    Energy Technology Data Exchange (ETDEWEB)

    Jonnalagadda, Prasad; Mescheder, Ulrich; Kovacs, Andras; Nimoe, Antwi [Institute for Applied Research and Faculty Computer and Electrical Engineering, Hochschule Furtwangen University, Robert-Gerwig-Platz 1, 78120 Furtwangen (Germany)

    2011-06-15

    Needle-like surface structures have been fabricated using a self-organized nanostructuring process based on porous silicon. Optimized surfaces have been used for a novel bonding process in Si-MEMS. The realized needle-like surfaces enable Van-der-Waals based bonding at low temperature with self-assembly capability. The bonding forces depend on the surface topology and can be tailored by the nanostructuring process between permanent and detachable bonding. Bond strength for permanent bonding in the range of 1-10 MPa has been achieved. Multiple bonding of the same surface is possible (Velcro {sup registered} -principle). The capability of needle like surfaces for self aligned bonding of Si-chips or small silicon based systems (''smart dust'') on locally nanostructured areas of silicon wafers (Si-motherboard) has been shown. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors

    NARCIS (Netherlands)

    Rajaraman, V.; Makinwa, K.A.A.; French, P.J.

    2008-01-01

    We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device

  18. DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors

    NARCIS (Netherlands)

    Rajaraman, V.; Makinwa, K.A.A.; French, P.J.

    2008-01-01

    We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device

  19. Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion

    Science.gov (United States)

    Vangala, Shivashankar; Kimani, Martin; Peterson, Rita; Stites, Ron; Snure, Michael; Tassev, Vladimir

    2016-10-01

    Quasi-phase-matched (QPM) GaP layers up to 300 μm thick have been produced by low-pressure hydride vapor phase epitaxy (LP-HVPE) overgrowth on orientation-patterned GaAs (OPGaAs) templates fabricated using a wafer-fusion bonding technique. The growth on the OPGaAs templates resulted in up to 200 μm thick vertically propagating domains, with a total GaP thickness of 300 μm. The successful thick growth on OPGaAs templates is the first step towards solving the material problems associated with unreliable material quality of commercially available GaP wafers and making the whole process of designing QPM frequency conversion devices molecular beam epitaxy free and more cost-effective.

  20. Legume Wafer Supplementation to Increase the Performance of Post-Weaning Ettawa Grade Goats

    Directory of Open Access Journals (Sweden)

    Brilian Desca Dianingtyas

    2017-04-01

    Full Text Available This research was conducted to analyze the effect of legume wafer supplementation on the performance of post weaning Ettawa Grade goats. A total of 16 post weaning Ettawa Grade goats (average body weight 13.10±0.91 kg were grouped into 4 group treatments and 4 blocks as replicate in a completely randomized block design. The treatments were T0 (basal diet/control, T1 (supplementation of 12.12% wafer supplement of Indigofera zollingeriana, T2 (supplementation of 13.54% wafer supplement of Leucaena leucocephala and T3 (supplementation of 12.37% wafer supplement of Calliandra calothyrsus. The feed intake, nutrient digestibility, average daily gain (ADG, feed efficiency (FE, and income over feed cost (IOFC were observed. The results showed that supplementation of legume wafer increased (P<0.05 the feed intake, organic matter digestibility, ADG, FE, and IOFC. Supplementation of I. zollingeriana wafer increased ADG by 55.08%, FE by 34.91%, and IOFC by 14.53%; L. leucocephala wafer increased ADG by 66.18%, FE by 41.63%, and IOFC by 19.09%; and C. calothyrsus wafer increased ADG by 32.62%, FE by 11.30%, and IOFC by 14.34%. In conclusion, the addition of legume wafer supplements into the rations could increase the feed utility value of legumes and L. leucocephala wafer at 13.54% showed the best performance in post-weaning Ettawa Grade goats.

  1. Direct evidence for preferential {beta} C-H bond cleavage resulting from 248 nm photolysis of the n-propyl radical using selectively-deuterated 1-bromopropane precursors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Z.; Mathews, M.G.; Koplitz, B. [Tulane Univ., New Orleans, LA (United States)

    1995-05-04

    A series of selectively deuterated 1-bromopropane precursors have been used to study site-specific photolysis in the n-propyl radical. A two-color photolysis approach (222 nm followed by 248 nm radiation) is used to create an intermediate photofragment and produce an H or a D atom, which is detected by 1 + 1 resonance ionization through Lyman-{alpha}. Target precursors are BrCH{sub 2}CD{sub 2}CD{sub 3}, BrCD{sub 2}CH{sub 2}CD{sub 3}, and BrCD{sub 2}CD{sub 2}CH{sub 3} as well as BrCD{sub 2}CH{sub 2}CH{sub 3}, BrCH{sub 2}CD{sub 2}CH{sub 3}, and BrCH{sub 2}CH{sub 2}CD{sub 3}. The `enhanced` H (or D) atom signals clearly demonstrate that C-H (or C-D) bond cleavage at the {beta} position is strongly favored. The net enhancement process undoubtedly involves photolysis of an intermediate, almost certainly the n-propyl radical. A comparison with systems involving ethyl and isopropyl radical photolysis is also presented. 14 refs., 4 figs.

  2. Persentase Karkas Itik Peking yang Diberi Pakan dalam Bentuk Wafer Ransum Komplit Mengandung Limbah Kopi

    Directory of Open Access Journals (Sweden)

    Muhammad Daud

    2016-04-01

    Full Text Available ABSTRAK. Penggunaan wafer ransum komplit mengandung limbah kopi pada itik peking dilakukan dengan tujuan untuk mengetahui berat akhir dan persentase karkas. Materi penelitian yang digunakan adalah itik peking umur 1 hari (DOD sebanyak 96 ekor dibagi dalam 4 perlakuan dan 3 ulangan. Ransum yang digunakan satu bulan pertama adalah ransum komersil, dan satu bulan terakhir wafer ransum komplit mengandung limbah kopi. Ransum perlakuan yang diberikan adalah: P0 = Wafer ransum komplit 0% limbah kopi (kontrol, P1 = Wafer ransum komplit 2,5% limbah kopi, P2 = Wafer ransum komplit 5% limbah kopi, dan P3 = Wafer ransum komplit 7,5% limbah kopi. Parameter yang diamati: bobot hidup, bobot karkas, bobot potongan karkas, persentase karkas, dan persentase potongan karkas. Penelitian ini menggunakan Rancangan Acak Lengkap. Data dianalisis dengan analysis of variance dan dilanjutkan dengan Uji Duncan. Hasil penelitian menunjukkan penggunaan limbah kulit kopi sebagai bahan penyusun ransum itik peking dalam bentuk wafer ransum komplit berpengaruh nyata terhadap bobot akhir. Penggunaan limbah kulit kopi 2,5% dalam ransum secara signifikan (P<0.05 meningkatkan bobot karkas dan potongan karkas. Dapat disimpulkan penggunaan limbah kulit kopi sebanyak 2,5% sebagai bahan penyusun wafer ransum komplit tidak memberi pengaruh negatif terhadap bobot badan akhir, persentase karkas dan potongan karkas itik peking.    (Carcass percentage of peking duck feed wafer complete ration containing of coffee waste  ABSTRACT. This research was conducted to study the effectiveness of wafer complete ration containing coffee waste on the final body weight and carcass percentage. The study used 96 DOD Peking duck. Completely Randomized Design (CRD consisting of 4 treatments and 3 replications. Rations used during the first month was a commercial ration, and then subsequently wafer complete ration of coffee waste given as treatments; P0 = wafer complete ration contained 0% of coffee waste

  3. Interfacial characterization of Al-Al thermocompression bonds

    Energy Technology Data Exchange (ETDEWEB)

    Malik, N., E-mail: nishantmalik1987@gmail.com [Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1032, Blindern, N-0315 Oslo (Norway); SINTEF ICT, Department of Microsystems and Nanotechnology, P.O. Box 124 Blindern, N-0314 Oslo (Norway); Carvalho, P. A. [SINTEF Materials and Chemistry, Department of Materials and Nanotechnology, P.O. Box 124 Blindern, N-0314 Oslo (Norway); Poppe, E. [SINTEF ICT, Department of Microsystems and Nanotechnology, P.O. Box 124 Blindern, N-0314 Oslo (Norway); Finstad, T. G. [Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1032, Blindern, N-0315 Oslo (Norway)

    2016-05-28

    Interfaces formed by Al-Al thermocompression bonding were studied by the transmission electron microscopy. Si wafer pairs having patterned bonding frames were bonded using Al films deposited on Si or SiO{sub 2} as intermediate bonding media. A bond force of 36 or 60 kN at bonding temperatures ranging from 400–550 °C was applied for a duration of 60 min. Differences in the bonded interfaces of 200 μm wide sealing frames were investigated. It was observed that the interface had voids for bonding with 36 kN at 400 °C for Al deposited both on Si and on SiO{sub 2}. However, the dicing yield was 33% for Al on Si and 98% for Al on SiO{sub 2}, attesting for the higher quality of the latter bonds. Both a bond force of 60 kN applied at 400 °C and a bond force of 36 kN applied at 550 °C resulted in completely bonded frames with dicing yields of, respectively, 100% and 96%. A high density of long dislocations in the Al grains was observed for the 60 kN case, while the higher temperature resulted in grain boundary rotation away from the original Al-Al interface towards more stable configurations. Possible bonding mechanisms and reasons for the large difference in bonding quality of the Al films deposited on Si or SiO{sub 2} are discussed.

  4. Effect of surfactant on removal of particle contamination on Si wafers in ULSI

    Institute of Scientific and Technical Information of China (English)

    TAN Bai-mei; LI Wei-wei; NIU Xin-huan; WANG Sheng-li; LIU Yu-ling

    2006-01-01

    The adsorption mechanism of particle on the surface of silicon wafer after polishing or grinding whose surface force field is very strong was discussed,and the removal method of particle was studied. Particle is deposited on the wafer surface by interactions,mainly including the Van der Waals forces and static forces. In order to suppress particles depositing on the wafer surface,it is essential that the wafer surface and the particles should have the same polarity of the zeta potential. According to colloid chemistry and lots of experiments,this can be achieved by adding surfactants. Nonionic complex surfactant was used as megasonic cleaning solution,and the adsorptive state of particle on Si wafers was effectively controlled. The efficiency and effect of megasonic particle removal is greatly improved. A perfect result is also obtained in wafer cleaning.

  5. PRICING OF MULTIPLE DEFAULTABLE BOND

    Institute of Scientific and Technical Information of China (English)

    JianZhihong; LiChulin

    2002-01-01

    In this paper a generalized defaultable bond pricing formula is derived by assuming that there exists a defaultable forward rate term structure and that firms in the economy interact when default occurs. Generally,The risk-neutral default intensity χQ is not equal to the empirical or actual default intensity λ,. This paper proves that multiple default intensities are invari-ant under equivalent martingale transformation,given a well-diversified portfolio corresponding to the defaultable bond. Thus one can directly apply default intensities and fractional losses empirically estimated to the evaluation of defaultable bonds or contingent claims.

  6. Highly fluorescent platinum(II) organometallic complexes of perylene and perylene monoimide, with Pt σ-bonded directly to the perylene core.

    Science.gov (United States)

    Lentijo, Sergio; Miguel, Jesús A; Espinet, Pablo

    2010-10-18

    3-Bromoperylene (BrPer) or N-(2,5-di-tert-butylphenyl)-9-bromo-perylene-3,4-dicarboximide (BrPMI) react with [Pt(PEt(3))(4)] to yield trans-[PtR(PEt(3))(2)Br] (R = Per, 1a; R = PMI, 1b). Neutral and cationic perylenyl complexes containing a Pt(PEt(3))X group have been prepared from 1a,b by substitution of the Br ligand by a variety of other ligands (NCS, CN, NO(3), CN(t)Bu, PyMe). The X-ray structures of trans-[PtR(PEt(3))(2)X] (R = Per, X = NCS (2a); R = PMI, X = NO(3) (4b); R = Per, X = CN(t)Bu (5a)) show that the perylenyl fragment remains nearly planar and is arranged almost orthogonal to the coordination plane: The three molecules appear as individual entities in the solid state, with no π-π stacking of perylenyl rings. Each platinum complex exhibits fluorescence associated to the perylene or PMI fragments with emission quantum yields, in solution at room temperature, in the range 0.30-0.80 and emission lifetimes ∼4 ns, but with significantly different emission maxima, by influence of the X ligands on Pt. The similarity of the overall luminescence spectra of these metalated complexes with the perylene or PMI strongly suggests a perylene-dominated intraligand π-π*emissive state, metal-perturbed by interaction of the platinum fragment mostly via polarization of the Ar-Pt bond.

  7. Network analyzer calibration for cryogenic on-wafer measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hietala, V.M.; Housel, M.S.; Caldwell, R.B.

    1994-04-01

    A cryogenic probe station for on-wafer microwave measurements has been developed at Sandia National Laboratories to explore the basic device physics and characterize advanced components for low-temperature applications. The station was designed to operate over a temperature range of 20 to 300 K with a frequency range of DC to 50 GHz. Due to the vacuum and the low temperature environment, the use of microwave probes and the calibration of network analyzer measurements are somewhat elaborate. This paper presents guidelines for probe use and calibration in this environment.

  8. PEMANFAATAN KLOBOT JAGUNG SEBAGAI WAFER RANSUM KOMPLIT UNTUK DOMBA

    Directory of Open Access Journals (Sweden)

    YULI RETNANI

    2012-09-01

    Full Text Available ABSTRAK Limbah pertanian pada umumnya memiliki kandungan protein, kecernaan, dan palatabilitas yang rendah disamping itu sifatnya yang voluminous menyulitkan dalam penanganan, baik pada saat transportasi maupun penyimpanannya, sehingga memerlukan suatu cara untuk meningkatkan nilai guna limbah pertanian. Klobot jagung merupakan salah satu limbah yang dapat dimanfaatkan sebagai sumber serat, karena kandungan seratnya tinggi yaitu sebesar 32%. Kendala yang dihadapi dalam penggunaan klobot jagung sebagai pakan ternak yaitu sifatnya yang voluminous, sehingga masih belum banyak dimanfaatkan sebagai pakan ternak. Untuk memudahkan penyimpanan dan menjaga ketersediaannya maka klobot jagung dimanfaatkan dengan pengolahan fisik dalam bentuk wafer. Tujuan penelitian ini untuk mengetahui taraf terbaik dari klobot jagung yang dapat digunakan sebagai substitusi sumber serat pengganti rumput lapang di dalam wafer ransum komplit untuk domba ditinjau dari kualitas sifat fisik yaitu kadar air, kerapatan wafer, daya serap air, dan palatabilitas. Rancangan percobaan yang digunakan adalah rancangan acak lengkap (RAL dengan 4 perlakuan dan 3 ulangan. Perlakuan yang dicobakan adalah: ransum yang mengandung 30% rumput lapang + 70% konsentrat (R1; ransum yang mengandung 20% rumput lapang + 10% klobot jagung + 70% konsentrat (R2; ransum yang mengandung 10% rumput lapang + 20% klobot jagung + 70% konsentrat (R3; dan ransum yang mengandung 30% klobot jagung + 70% konsentrat (R4. Variabel yang diukur adalah kandungan air, densitas, penyerapan air, dan palatabitas dari wafer klobot jagung. Hasil penelitian menunjukkan bahwa perlakuan R2 dan R3 berpengaruh terhadap kandungan air (p<0,05. Perlakuan R2, R3, dan R4 berpengaruh sangat nyata terhadap daya serap air (p<0,01, tetapi tidak berpengaruh terhadap densitas. Nilai kandungan air berkisar antara 9,39%-12,61%, dan nilai densitas berkisar antara 0,70 g/cm3-0,75 g/cm3, sedangkan nilai palatabilitas wafer berkisar 550-885 g

  9. Characteristics of Si+/B+ dual implanted silicon wafers

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Thin p+ layers with good electrical properties were fabricated by RTA (rapid thermal annealing) with post-FA (furance annealing) of Si+/B+ dual implanted silicon wafers. The electrical and structural characteristics of thin p+ layers have been measured by FPP (four-point probe), SRP (spreading resistance probe), RBS/channelling. Optimizing the implantation and annealing processes, especially using the thermal cycle of RTA followed by FA, shallow p+n junctions can be fabricated, which shows excellent I-V characteristics with revers-bias leakage current densities of 1.8?nA/cm2 at -1.4?V.

  10. Exploration of surface hydrophilic properties on AISI 304 stainless steel and silicon wafer against aging after atmospheric pressure plasma treatment

    Science.gov (United States)

    Chuang, Shang-I.; Duh, Jenq-Gong

    2014-11-01

    The aim of this work is to seek the enhanced surface hydrophilic properties on AISI 304 stainless steel and silicon wafer after atmospheric pressure plasma treatment using a specifically designed atmospheric pressure plasma jet. The aging tendency of surface hydrophilic property under air is highlighted. It is concluded that both of the silicon wafer and stainless steel treated with plasma generated from supply gas of argon 15 slm mixed with oxygen 40 sccm shows a better tendency on remaining high water contact angle as compared to that with pure argon and nitrogen addition. Additional peaks of O I (777, 844 nm), O II (408 nm) are detected by optical emission spectroscope indicating the presence of the oxygen radicals and ionic species, which interact with surfaces and thus contribute to low water contact angle (WCA) surfaces. Moreover, the result acquired from X-ray photoelectron spectroscopy (XPS) indicates that the increase in the oxygen-related bonding exhibits a better contribution on remaining high surface energy over a period of time.

  11. DRIE fabrication of notch-free silicon structures using a novel silicon-on-patterned metal and glass wafer

    Science.gov (United States)

    Kim, Ki Hoon; Kim, Sang Cheol; Park, Kyu Yeon; Yang, Sang Sik

    2011-04-01

    This paper presents a method of fabricating a silicon structure without notches using a new kind of substrate consisting of silicon-on-patterned metal and glass (SOMG). It has a metal interlayer with a thickness of 0.1 µm between a silicon wafer and glass wafer as an insulation layer to eliminate the micro-charging effect on the insulation surface for the silicon dry etching process. This substrate is fabricated by anodic bonding and polishing. To ascertain the effect of the SOMG substrate, 100 µm deep silicon structures with 5 and 20 µm wide trenches have been etched on SOG (silicon-on-glass) and SOMG substrates under similar conditions. In order to perform the deep silicon etching process, a thick photoresist of AZ9260 is used as a dry etch mask. In the results, no notches are on SOMG, while notches occur on SOG. Also, regardless of the over-etching time as the dimensions of the area to be etched, no notches are formed at the bottom of the silicon structure. This results in a notchless silicon structure. This research shows the feasibility of applying this technique to many applications using silicon devices.

  12. Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging

    Science.gov (United States)

    Lee, Ju-Yong; Lee, Sung-Woo; Lee, Seung-Ki; Park, Jae-Hyoung

    2013-08-01

    We present a novel method for the fabrication of void-free copper-filled through-glass-vias (TGVs), and their application to the wafer-level radio frequency microelectromechanical systems (RF MEMS) packaging scheme. By using the glass reflow process with a patterned silicon mold, a vertical TGV with smooth sidewall and fine pitch could be achieved. Bottom-up void-free filling of the TGV is successfully demonstrated through the seedless copper electroplating process. In addition, the proposed process allows wafer-level packaging with glass cap encapsulation using the anodic bonding process, since the reflowed glass interposer is only formed in the device area surrounded with silicon substrate. A simple coplanar waveguide (CPW) line was employed as the packaged device to evaluate the electrical characteristics and thermo-mechanical reliability of the proposed packaging structure. The fabricated packaging structure showed a low insertion loss of 0.116 dB and a high return loss of 35.537 dB at 20 GHz, which were measured through the whole electrical path, including the CPW line, TGVs and contact pads. An insertion loss lower than 0.1 dB and a return loss higher than 30 dB could be achieved at frequencies of up to 15 GHz, and the resistance of the single copper via was measured to be 36 mΩ. Furthermore, the thermo-mechanical reliability of the proposed packaging structure was also verified through thermal shock and pressure cooker test.

  13. Selected applications of photothermal and photoluminescence heterodyne techniques for process control in silicon wafer manufacturing

    Science.gov (United States)

    Ehlert, Andreas; Kerstan, Michael; Lundt, Holger; Huber, Anton; Helmreich, Dieter; Geiler, Hans-Dieter; Karge, Harald; Wagner, Matthias

    1997-02-01

    Two noncontact laser-based heterodyne techniques, photothermal heterodyne (PTH) and photoluminescence heterodyne (PLH), are introduced and applied to processing and quality control in silicon wafer manufacturing. The crystallographic characteristics of process-induced defects in silicon wafers are suitable for the application of PTH and PLH techniques, which are demonstrated on selected examples from different steps of silicon wafer production. Both PLH and PTH techniques meet the demand for nondestructive and on-line-suitable measurement in the semiconductor industry.

  14. Direct C-C Coupling of CO2 and the Methyl Group from CH4 Activation through Facile Insertion of CO2 into Zn-CH3 σ-Bond.

    Science.gov (United States)

    Zhao, Yuntao; Cui, Chaonan; Han, Jinyu; Wang, Hua; Zhu, Xinli; Ge, Qingfeng

    2016-08-17

    Conversion of CO2 and CH4 to value-added products will contribute to alleviating the green-house gas effect but is a challenge both scientifically and practically. Stabilization of the methyl group through CH4 activation and facile CO2 insertion ensure the realization of C-C coupling. In the present study, we demonstrate the ready C-C coupling reaction on a Zn-doped ceria catalyst. The detailed mechanism of this direct C-C coupling reaction was examined based on the results from density functional theory calculations. The results show that the Zn dopant stabilizes the methyl group by forming a Zn-C bond, thus hindering subsequent dehydrogenation of CH4. CO2 can be inserted into the Zn-C bond in an activated bent configuration, with the transition state in the form of a three-centered Zn-C-C moiety and an activation barrier of 0.51 eV. The C-C coupling reaction resulted in the acetate species, which could desorb as acetic acid by combining with a surface proton. The formation of acetic acid from CO2 and CH4 is a reaction with 100% atom economy, and the implementation of the reaction on a heterogeneous catalyst is of great importance to the utilization of the greenhouse gases. We tested other possible dopants including Al, Ga, Cd, In, and Ni and found a positive correlation between the activation barrier of C-C coupling and the electronegativity of the dopant, although C-H bond activation is likely the dominant reaction on the Ni-doped ceria catalyst.

  15. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells

    Science.gov (United States)

    Tayagaki, Takeshi; Furuta, Daichi; Aonuma, Osamu; Takahashi, Isao; Hoshi, Yusuke; Kurokawa, Yasuyoshi; Usami, Noritaka

    2017-04-01

    Crystalline silicon (c-Si) wafers have found extensive use in photovoltaic applications. In this regard, to enable advanced light manipulation in thin-wafer c-Si solar cells, we demonstrate the fabrication of double-side-textured Si wafers composed of a front-surface photonic nanotexture fabricated with quantum dot arrays and a rear-surface microtexture. The addition of the rear-surface microtexture to a Si wafer with the front-surface photonic nanotexture increases the wafer’s optical absorption in the near-infrared region, thus enabling enhanced light trapping. Excitation spectroscopy reveals that the photoluminescence intensity in the Si wafer with the double-sided texture is higher than that in the Si wafer without the rear-surface microtexture, thus indicating an increase in true optical absorption in the Si wafer with the double-sided texture. Our results indicate that the double-sided textures, i.e., the front-surface photonic nanotexture and rear-surface microtexture, can effectively reduce the surface reflection loss and provide enhanced light trapping, respectively.

  16. Halogen Bonding in Hypervalent Iodine Compounds.

    Science.gov (United States)

    Catalano, Luca; Cavallo, Gabriella; Metrangolo, Pierangelo; Resnati, Giuseppe; Terraneo, Giancarlo

    Halogen bonds occur when electrophilic halogens (Lewis acids) attractively interact with donors of electron density (Lewis bases). This term is commonly used for interactions undertaken by monovalent halogen derivatives. The aim of this chapter is to show that the geometric features of the bonding pattern around iodine in its hypervalent derivatives justify the understanding of some of the longer bonds as halogen bonds. We suggest that interactions directionality in ionic and neutral λ(3)-iodane derivatives is evidence that the electron density distribution around iodine atoms is anisotropic, a region of most positive electrostatic potential exists on the extensions of the covalent bonds formed by iodine, and these positive caps affect, or even determine, the crystal packing of these derivatives. For instance, the short cation-anion contacts in ionic λ(3)-iodane and λ(5)-iodane derivatives fully match the halogen bond definition and geometrical prerequisites. The same holds for the short contacts the cation of ionic λ(3)-iodanes forms with lone-pair donors or the short contacts given by neutral λ(3)-iodanes with incoming nucleophiles. The longer and weaker bonds formed by iodine in hypervalent compounds are usually called secondary bondings and we propose that the term halogen bond can also be used. Compared to the term secondary bond, halogen bond may possibly be more descriptive of some bonding features, e.g., its directionality and the relationships between structure of interacting groups and interaction strength.

  17. Effect of internal stresses on the mechanical parameters of silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Oksanich, A.P.; Cherner, V.M.; Tuzovskii, K.A.

    1988-12-01

    The authors examined how the mechanical parameters of silicon wafers vary with the stress area. The polished (100) wafers were cut from a billet grown by Czochralski's method. The internal stresses were produced by moving the wafers in and out of an oven having a working zone at 1420 K. Then the oxide film was removed. The area of the stressed parts was determined by photoelasticity. The mechanical parameters were measured with contactless pneumatic loading and continuous central deflection measurement. The internal stresses affect the properties; at a given load the central deflection in an unstressed wafer is larger than in a stressed one.

  18. Fabrication of micro-nano composite textured surface for slurry sawn mc-Si wafers cell

    Science.gov (United States)

    Niu, Y. C.; liu, Z.; Ren, X. K.; Liu, X. J.; Liu, H. T.; Jiang, Y. S.

    2017-01-01

    In order to enhance the PV efficiency of the cell made from slurry sawn (SS) mc-Si wafers, using a Ag-assisted electroless etching (AgNO3+HF+H2O2) combined with an auxiliary etching (HF+HNO3) the RENA textured SS mc-Si wafers (called as RENA wafers) were further textured (nano pores were formed on the original micro pits) to change into micro-nano composite textured wafers (called as MN-RENA wafers). The solar cells made from the MN-RENA wafers had a better PV efficiency than that of RENA wafers. This is mainly attributed to the higher light-trapping of the micro-nano composite texture. The nano size texture enhanced the light-trap of wafer surface and, at the same time, the micro size texture maintained the light-trap uniformity of different gains of RENA wafer. However, there still exist a potential for optimization, such as, the SiNx passviation coating should be improved to be deposited more uniformly in order to passivate the bottom of pits better and to reduce the reflectance of the obtuse tips of pits.

  19. Wafer-level testing and test during burn-in for integrated circuits

    CERN Document Server

    Bahukudumbi, Sudarshan

    2010-01-01

    Wafer-level testing refers to a critical process of subjecting integrated circuits and semiconductor devices to electrical testing while they are still in wafer form. Burn-in is a temperature/bias reliability stress test used in detecting and screening out potential early life device failures. This hands-on resource provides a comprehensive analysis of these methods, showing how wafer-level testing during burn-in (WLTBI) helps lower product cost in semiconductor manufacturing.Engineers learn how to implement the testing of integrated circuits at the wafer-level under various resource constrain

  20. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

    Directory of Open Access Journals (Sweden)

    Bo Xie

    2015-09-01

    Full Text Available This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months, a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

  1. Residual stress in silicon wafer using IR polariscope

    Science.gov (United States)

    Lu, Zhijia; Wang, Pin; Asundi, Anand

    2008-09-01

    The infrared phase shift polariscope (IR-PSP) is a full-field optical technique for stress analysis in Silicon wafers. Phase shift polariscope is preferred to a conventional polariscope, as it can provide quantitative information of the normal stress difference and the shear stress in the specimen. The method is based on the principles of photoelasticity, in which stresses induces temporary birefringence in materials which can be quantitatively analyzed using a phase shift polariscope. Compared to other stress analysis techniques such as x-ray diffraction or laser scanning, infrared photoelastic stress analysis provides full-field information with high resolution and in near real time. As the semiconductor fabrication is advancing, larger wafers, thinner films and more compact packages are being manufactured. This results in a growing demand of process control. Residual stress exist in silicon during semiconductor fabrication and these stresses may make cell processing difficult or even cause the failure of the silicon. Reducing these stresses would improve manufacturability and reliability. Therefore stress analysis is essential to trace the root cause of the stresses. The polariscope images are processed using MATLAB and four-step phase shifting method to provide quantitative as well as qualitative information regarding the residual stress of the sample. The system is calibrated using four-point bend specimen and then the residual stress distribution in a MEMS sample is shown.

  2. Implementation of high-resolution reticle inspection in wafer fabs

    Science.gov (United States)

    Dayal, Aditya; Bergmann, Nathan M.; Sanchez, Peter

    2003-05-01

    Many advanced wafer fabs are currently fabricating devices with 130nm or smaller design rules. To meet the challenges at these sub-wavelength technology nodes, fabs are using a variety of resolution enhancement techniques (RETs) in lithography and exploring new methods of processing, inspecting and requalifying photomasks. The acceleration of the lithography roadmap imposes more stringent requirements on mask qualification and requalification to ensure that device yields are not compromised: mask inspection tools of today need to find smaller defects on reticles against considerably more complicated patterns or tighter critical dimensions (CDs). In this paper we describe the early stages of implementation and proliferation of advanced reticle inspection tools at high volume manufacturing wafer fabs. The fabs run incoming multi-surface contamination inspections on masks sent from the mask shop (Intel Mask Operations, IMO), and follow them up with periodic inspections/review to make sure any new contaminant or damage does not go undetected. When necessary, images of defects are electronically presented to engineers at IMO for review. Reticle requalification with these inspection tools reduces or eliminates the need for print test verification. We describe the tools and procedure used to streamline reticle requalification at the fabs and improve the feedback loop between the fabs and the mask shop.

  3. (18)F-Fluorination of Unactivated C-H Bonds in Branched Aliphatic Amino Acids: Direct Synthesis of Oncological Positron Emission Tomography Imaging Agents.

    Science.gov (United States)

    Nodwell, Matthew B; Yang, Hua; Čolović, Milena; Yuan, Zheliang; Merkens, Helen; Martin, Rainer E; Bénard, François; Schaffer, Paul; Britton, Robert

    2017-03-15

    A mild and selective photocatalytic C-H (18)F-fluorination reaction has been developed that provides direct access to (18)F-fluorinated amino acids. The biodistribution and uptake of three (18)F-labeled leucine analogues via LAT1 mediated transport in several cancer cell lines is reported. Positron emission tomography imaging of mice bearing PC3 (prostate) or U87 (glioma) xenografts using 5-[(18)F]-fluorohomoleucine showed high tumor uptake and excellent tumor visualization, highlighting the utility of this strategy for rapid tracer discovery for oncology.

  4. Tensile Bond Strength of Latex-Modified Bonded Concrete Overlays

    Science.gov (United States)

    Dubois, Cameron; Ramseyer, Chris

    2010-10-01

    The tensile bond strength of bonded concrete overlays was tested using the in-situ pull-off method described in ASTM C 1583 with the goal of determining whether adding latex to the mix design increases bond strength. One slab of ductile concrete (f'c > 12,000 psi) was cast with one half tined, i.e. roughened, and one half steel-troweled, i.e. smooth. The slab surface was sectioned off and overlay mixtures containing different latex contents cast in each section. Partial cores were drilled perpendicular to the surface through the overlay into the substrate. A tensile loading device applied a direct tensile load to each specimen and the load was increased until failure occurred. The tensile bond strength was then calculated for comparison between the specimens.

  5. Understanding Bonds - Denmark

    DEFF Research Database (Denmark)

    Rimmer, Nina Røhr

    2016-01-01

    a specified rate of interest during the life of the bond and to repay the face value of the bond (the principal) when it “matures,” or comes due. Among the types of bonds you can choose from are: Government securities, municipal bonds, corporate bonds, mortgage and asset-backed securities, federal agency...

  6. Penggunaan Limbah Kopi Sebagai Bahan Penyusun Ransum Itik Peking dalam Bentuk Wafer Ransum Komplit

    Directory of Open Access Journals (Sweden)

    Muhammad Daud

    2013-04-01

    Full Text Available Effect of coffee waste as component of compiler ration peking duck in the form of wafer complete ration ABSTRACT. Coffee waste is a by-product of coffee processing that potential to be used as feed stuff for peking duck. The weakness of this coffee waste, among others, is perishable, voluminous (bulky and the availability was fluctuated so the processing technology is needed to make this vegetable waste to be durable, easy to stored and to be given to livestock. To solve this problem vegetable waste could be formed as wafer. This research was conducted to study effectiveness of coffee waste as component of compiler ration peking duck in the form of wafer complete ration This experiment was run in completely randomized design which consist of 4 feed treatment and 3 replications.  Ration used was consisted of  P0 = wafer complete ration 0% coffee waste (control, P1 = wafer complete ration 2,5% coffee waste, P2 = wafer complete ration 5% coffee waste, and P3 = Wafer complete ration 7,5% coffee waste. The Variables observed were: physical characteristic (aroma, color, and wafer density and palatability of wafer complete ration. Data collected was analyzed with ANOVA and Duncan Range Test would be used if the result was significantly different. The result showed that the density of wafer complete ration coffee waste was significantly (P< 0.05 differences between of treatment. Mean density wafer complete ration equal to: P0= 0,52±0,03, P1 =0,67±0,04, P2 =0,72±0,03, and P3 = 0,76±0.05 g/cm3. Wafer complete ration coffee waste palatability was significantly (P< 0.05 differences between of treatment. It is concluded that of wafer complete ration composition 5 and 7,5% coffee waste was significantly wafer palatability and gave a highest wafer density. The ration P0 was the most palatable compare to other treatments for the experimental peking duck.

  7. Penggunaan Limbah Kopi Sebagai Bahan Penyusun Ransum Itik Peking dalam Bentuk Wafer Ransum Komplit

    Directory of Open Access Journals (Sweden)

    Muhammad Daud

    2013-04-01

    Full Text Available Effect of coffee waste as component of compiler ration peking duck in the form of wafer complete ration ABSTRACT. Coffee waste is a by-product of coffee processing that potential to be used as feed stuff for peking duck. The weakness of this coffee waste, among others, is perishable, voluminous (bulky and the availability was fluctuated so the processing technology is needed to make this vegetable waste to be durable, easy to stored and to be given to livestock. To solve this problem vegetable waste could be formed as wafer. This research was conducted to study effectiveness of coffee waste as component of compiler ration peking duck in the form of wafer complete ration This experiment was run in completely randomized design which consist of 4 feed treatment and 3 replications.  Ration used was consisted of  P0 = wafer complete ration 0% coffee waste (control, P1 = wafer complete ration 2,5% coffee waste, P2 = wafer complete ration 5% coffee waste, and P3 = Wafer complete ration 7,5% coffee waste. The Variables observed were: physical characteristic (aroma, color, and wafer density and palatability of wafer complete ration. Data collected was analyzed with ANOVA and Duncan Range Test would be used if the result was significantly different. The result showed that the density of wafer complete ration coffee waste was significantly (P< 0.05 differences between of treatment. Mean density wafer complete ration equal to: P0= 0,52±0,03, P1 =0,67±0,04, P2 =0,72±0,03, and P3 = 0,76±0.05 g/cm3. Wafer complete ration coffee waste palatability was significantly (P< 0.05 differences between of treatment. It is concluded that of wafer complete ration composition 5 and 7,5% coffee waste was significantly wafer palatability and gave a highest wafer density. The ration P0 was the most palatable compare to other treatments for the experimental peking duck.

  8. Physical Nature of Hydrogen Bond

    CERN Document Server

    Zhyganiuk, I V

    2015-01-01

    The physical nature and the correct definition of hydrogen bond (H-bond) are considered.\\,\\,The influence of H-bonds on the thermodynamic, kinetic, and spectroscopic properties of water is analyzed.\\,\\,The conventional model of H-bonds as sharply directed and saturated bridges between water molecules is incompatible with the behavior of the specific volume, evaporation heat, and self-diffusion and kinematic shear viscosity coefficients of water. On the other hand, it is shown that the variation of the dipole moment of a water molecule and the frequency shift of valence vibrations of a hydroxyl group can be totally explained in the framework of the electrostatic model of H-bond.\\,\\,At the same time, the temperature dependences of the heat capacity of water in the liquid and vapor states clearly testify to the existence of weak H-bonds.\\,\\,The analysis of a water dimer shows that the contribution of weak H-bonds to its ground state energy is approximately 4--5 times lower in comparison with the energy of electr...

  9. Wafer-scale fabrication of uniform Si nanowire arrays using the Si wafer with UV/Ozone pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Fan; Li, Meicheng, E-mail: mcli@ncepu.edu.cn [Harbin Institute of Technology, School of Materials Science and Engineering (China); Huang, Rui; Yu, Yue; Gu, Tiansheng; Chen, Zhao; Fan, Huiyang; Jiang, Bing [North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy (China)

    2013-09-15

    The electroless etching technique combined with the process of UV/Ozone pretreatment is presented for wafer-scale fabrication of the silicon nanowire (SiNW) arrays. The high-level uniformity of the SiNW arrays is estimated by the value below 0.2 of the relative standard deviation of the reflection spectra on the 4-in. wafer. Influence of the UV/Ozone pretreatment on the formation of SiNW arrays is investigated. It is seen that a very thin SiO{sub 2} produced by the UV/Ozone pretreatment improves the uniform nucleation of Ag nanoparticles (NPs) on the Si surface because of the effective surface passivation. Meanwhile, the SiO{sub 2} located among the adjacent Ag NPs can obstruct the assimilation growth of Ag NPs, facilitating the deposition of the uniform and dense Ag NPs catalysts, which induces the formation of the SiNW arrays with good uniformity and high filling ratio. Furthermore, the remarkable antireflective and hydrophobic properties are observed for the SiNW arrays which display great potential in self-cleaning antireflection applications.

  10. Adhesives for orthodontic bracket bonding

    Directory of Open Access Journals (Sweden)

    Déborah Daniella Diniz Fonseca

    2010-04-01

    Full Text Available The advent of acid etching, introduced by Buonocore in 1955, brought the possibility of bonding between the bracket base and enamel, contributing to more esthetic and conservative orthodontics. This direct bracket bonding technique has brought benefits such as reduced cost and time in performing the treatment, as well as making it easier to perform oral hygiene. The aim of this study was to conduct a survey of published studies on orthodontic bracket bonding to dental enamel. It was verified that resin composites and glass ionomer are the most studied and researched materials for this purpose. Resin-modified glass ionomer, with its biocompatibility, capacity of releasing fluoride and no need for acid etching on the tooth structure, has become increasingly popular among dentists. However, due to the esthetic and mechanical properties of light polymerizable resin composite, it continues to be one of the adhesives of choice in the bracket bonding technique and its use is widely disseminated.

  11. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released

  12. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released t

  13. Tunable Vertical-Cavity Surface-Emitting Lasers Integrated with Two Wafers

    Institute of Scientific and Technical Information of China (English)

    REN Xiu-Juan; GUAN Bao-Lu; GUO Shuai; LI Shuo; LI Chuan-Chuan; HAO Cong-Xia; ZHOU Hong-Yi; GUO Xiao

    2011-01-01

    A novel two-wafer concept for micro-electro-mechanically tunable vertical cavity surface emitting lasers (VCSELs)is presented. The VCSEL is composed by two wafers: one micro-electromechanical-system membrane wafer with four arms to adjust the cavity length through electrostatic actuation and a "half-VCSEL" wafer consisting of a fixed bottom mirror and an amplifying active region. The measurement results of the electricity pumped tunable VCSEL with more than 9mW output power at room temperature over the tuning range prove the feasibility of the proposition.%@@ A novel two-wafer concept for micro-electro-mechanically tunable vertical cavity surface emitting lasers (VCSELs) is presented.The VCSEL is composed by two wafers: one micro-electromechanical-system membrane wafer with four arms to adjust the cavity length through electrostatic actuation and a "half-VCSEL" wafer consisting of a fixed bottom mirror and an amplifying active region.The measurement results of the electricity pumped tunable VCSEL with more than 9mW output power at room temperature over the tuning range prove the feasibility of the proposition.

  14. Fabrication of CVD graphene-based devices via laser ablation for wafer-scale characterization

    DEFF Research Database (Denmark)

    Mackenzie, David; Buron, Jonas Christian Due; Whelan, Patrick Rebsdorf;

    2015-01-01

    Selective laser ablation of a wafer-scale graphene film is shown to provide flexible, high speed (1 wafer/hour) device fabrication while avoiding the degradation of electrical properties associated with traditional lithographic methods. Picosecond laser pulses with single pulse peak fluences of 140......-effect mobility, doping level, on–off ratio, and conductance minimum before and after laser ablation fabrication....

  15. In-plane shear piezoelectric wafer active sensor phased arrays for structural health monitoring

    Science.gov (United States)

    Wang, Wentao; Zhou, Wensong; Wang, Peng; Wang, Chonghe; Li, Hui

    2016-04-01

    This paper proposes a new way for guided wave structural health monitoring using in-plane shear (d36 type) piezoelectric wafer active sensors phased arrays. Conventional piezoelectric wafer active sensors phased arrays based on inducing into specific Lamb wave modes (d31 type) has already widely used for health monitoring of the thin-wall structures. Rather than Lamb wave modes, the in-plane shear piezoelectric wafer active sensors phased arrays induces in-plane shear horizontal (SH) guided waves. The SH guided waves are distinct with the Lamb waves with simple waveform and less additional converted wave modes and the zero symmetric mode (SH0) is non-dispersive. In this paper, the advantage of the shear horizontal wave and the in-plane shear piezoelectric wafers capability to generate SH waves is first reviewed. Then finite element analysis of a 4-in-plane shear wafer active sensors phased array embedded on a rectangular aluminium plate is performed. In addition, numerical simulations with respect to creaks with different sizes as well as locations are implemented by the in-plane shear wafer active sensors phased array. For comparison purposes, the same numerical simulations using the conventional piezoelectric wafer active sensors phased arrays are also employed at the same time. Results indicate that the in-plane shear (d36 type) piezoelectric wafer active sensors phased arrays has the potential to identify damage location and assess damage severity in structural health monitoring.

  16. Heat transport in cold-wall single-wafer low pressure chemical-vapor-deposition reactors

    NARCIS (Netherlands)

    Hasper, A.; Schmitz, J.E.J.; Holleman, J.; Verweij, J.F.

    1992-01-01

    A model is formulated to understand and predict wafer temperatures in a tungsten low pressure chemical‐vapor‐deposition (LPCVD) single‐wafer cold‐wall reactor equipped with hot plate heating. The temperature control is usually carried out on the hot plate temperature. Large differences can occur

  17. Improved wafer-scale fabrication of aligned pdms-glass microchips with integrated electrodes

    NARCIS (Netherlands)

    Li, J.; Le Gac, S.; Berg, van den A.; Viovy, J.L.; Tabeling, P.; Descroix, S.; Malaquin, L.

    2007-01-01

    We report an improved fabrication process of PDMS-based hybrid chips at the scale of a whole wafer and including an alignment step. This implies a control of the dimension variations of this elastomer upon temperature changes and the production of a PDMS wafer compatible with the use of standard ali

  18. Fabrication of a wafer-scale uniform array of single-crystal organic nanowire complementary inverters by nanotransfer printing

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Koo Lee, Yong-Eun; Sung, Myung Mo

    2015-02-01

    We report the fabrication and electrical characterization of a wafer-scale array of organic complementary inverters using single-crystal 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) nanowires as p- and n-channels, respectively. Two arrays of single-crystal organic nanowires were generated consecutively on desired locations of a common substrate with a desired mutual alignment by a direct printing method (liquid-bridge-mediated nanotransfer molding). Another direct printing of silver micron scale structures, as source and drain electrodes, on the substrate with the two printed nanowire arrays produced an array of complementary inverters with a bottom gate, top contact configuration. Field-effect mobilities of single-crystal TIPS-PEN and C60 nanowire field-effect transistors (FETs) in the arrays were uniform with 1.01 ± 0.14 and 0.10 ± 0.01 cm2V-1 s-1, respectively. A wafer-scale array of complementary inverters produced all by the direct printing method showed good performance with an average gain of 25 and with low variations among the inverters.

  19. PMMA to SU-8 Bonding for Polymer Based Lab-on -a-chip Systems with Integrated Optics

    DEFF Research Database (Denmark)

    Clausen, Bjarne

    2003-01-01

    An adhesive bonding technique for wafer-level sealing of SU-8 based lab-on-a-chip microsystems with integrated optical components is presented. Microfluidic channels and optical components, e.g. waveguides, are fabricated in cross-linked SU-8 and sealed with a Pyrex glass substrate by means...

  20. Temperature Uniformity of Wafer on a Large-Sized Susceptor for a Nitride Vertical MOCVD Reactor

    Institute of Scientific and Technical Information of China (English)

    LI Zhi-Ming; JIANG Hai-Ying; HAN Yan-Bin; LI Jin-Ping; YIN Jian-Qin; ZHANG Jin-Cheng

    2012-01-01

    The effect of coil location on wafer temperature is analyzed in a vertical MOCVD reactor by induction heating.It is observed that the temperature distribution in the wafer with the coils under the graphite susceptor is more uniform than that with the coils around the outside wall of the reactor.For the case of coils under the susceptor,we find that the thickness of the susceptor,the distance from the coils to the susceptor bottom and the coil turns significantly affect the temperature uniformity of the wafer. An optimization process is executed for a 3-inch susceptor with this kind of structure,resulting in a large improvement in the temperature uniformity.A further optimization demonstrates that the new susceptor structure is also suitable for either multiple wafers or large-sized wafers approaching 6 and 8 inches.

  1. Stickers versus wafers: The value of resource in a public goods game with children

    Directory of Open Access Journals (Sweden)

    Phiética Raíssa Rodrigues da Silva

    Full Text Available Abstract We investigated how the type of resource, food (wafer or non-food (sticker, age and sex influence cooperation in children. 251 children were tested in a public goods game during eight rounds in two experimental conditions: wafer or sticker condition. Wafers were all of the same kind but stickers were varied. The results indicated that 1 older children donated more stickers than younger children, but they did not differ in relation to wafer donations; and 2 sticker donations remained high along the rounds, while wafer donations decreased. We propose that different strategies may be adopted according to the quality, particularly to the diversity of the resource used, and the cost of cooperation may be overcome when it is more advantageous to wait for a future reward.

  2. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Cross Shear Roll Bonding

    DEFF Research Database (Denmark)

    Bay, Niels; Bjerregaard, Henrik; Petersen, Søren. B;

    1994-01-01

    The present paper describes an investigation of roll bonding an AlZn alloy to mild steel. Application of cross shear roll bonding, where the two equal sized rolls run with different peripheral speed, is shown to give better bond strength than conventional roll bonding. Improvements of up to 20......-23% in bond strength are found and full bond strength is obtained at a reduction of 50% whereas 65% is required in case of conventional roll bonding. Pseudo cross shear roll bonding, where the cross shear effect is obtained by running two equal sized rolls with different speed, gives the same results....

  4. Study on localized induction heating for wafer level packaging

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Micro-electro-mechanical systems(MEMS)are being developed as a new multi-disciplinary technology,which will undoubtedly have a revolutionary impact on the future of human life.However,with the development of MEMS technology,the packaging has become the main technical obstacle to the commercialization of MEMS.An approach to MEMS packaging by high-frequency electromagnetic induction heating at wafer level is presented in terms of numerical simulation and experimental study.The structure of inductor is firstly designed and optimized.Then the heating situation of PCB board is verified.The results indicate that the heat impact on the chip during the packaging process can be effectively reduced by local induction heating packaging,therefore the thermal stress on the chip is considerably lowered.This method can effectively improve the reliability of the MEMS devices.

  5. Ambient plasma treatment of silicon wafers for surface passivation recovery

    Science.gov (United States)

    Ge, Jia; Prinz, Markus; Markert, Thomas; Aberle, Armin G.; Mueller, Thomas

    2017-08-01

    In this work, the effect of an ambient plasma treatment powered by compressed dry air on the passivation quality of silicon wafers coated with intrinsic amorphous silicon sub-oxide is investigated. While long-time storage deteriorates the effective lifetime of all samples, a short ambient plasma treatment improves their passivation qualities. By studying the influence of the plasma treatment parameters on the passivation layers, an optimized process condition was identified which even boosted the passivation quality beyond its original value obtained immediately after deposition. On the other hand, the absence of stringent requirement on gas precursors, vacuum condition and longtime processing makes the ambient plasma treatment an excellent candidate to replace conventional thermal annealing in industrial heterojunction solar cell production.

  6. Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Mohamed Fathi

    2007-01-01

    Full Text Available We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm. Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.

  7. Patterned wafer inspection using spatial filtering for the cluster environment.

    Science.gov (United States)

    Taubenblatt, M A; Batchelder, J S

    1992-06-10

    Automated-process tool clusters are becoming increasingly prevalent in advanced semiconductor manufacturing plants, necessitating integrated inspection of patterned semiconductor wafers for defects and particulates. Integrated inspection tools must be small, sensitive, inexpensive, and fast in order to be compatible with the cluster environment. We show that intensity spatial filtering, with some refinements, can provide the required sensitivity and speed in a small, inexpensive package. By using dark-field illumination and a nonrectangular azimuthal orientation (e.g., 45 degrees ) to the primarily rectangular pattern, we show that the strongest diffraction from the pattern can be made to bypass the optical system entirely. This technique alleviates stringent scatter and antireflection requirements on the optics, and it permits the use of off-the-shelf components.

  8. Fabrication of PIN diode detectors on thinned silicon wafers

    CERN Document Server

    Ronchin, Sabina; Dalla Betta, Gian Franco; Gregori, Paolo; Guarnieri, Vittorio; Piemonte, Claudio; Zorzi, Nicola

    2004-01-01

    Thin substrates are one of the possible choices to provide radiation hard detectors for future high-energy physics experiments. Among the advantages of thin detectors are the low full depletion voltage, even after high particle fluences, the improvement of the tracking precision and momentum resolution and the reduced material budget. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of tetra-methyl ammonium hydroxide etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 57 and 99mum thick membranes. They have been tested, showing a very low leakage current ( less than 0.4nA/cm**2) and, as expected, a very low depletion voltage ( less than 1V for the 57mum membrane). The paper describes the technological approach used for devices fabrication and reports selected results from the electrical characterization.

  9. Imaging Hydrogen Bond in Real Space

    CERN Document Server

    Chen, Xiu; Liu, Lacheng; Liu, Xiaoqing; Cai, Yingxing; Liu, Nianhua; Wang, Li

    2013-01-01

    Hydrogen bond is often assumed to be a purely electrostatic interaction between a electron-deficient hydrogen atom and a region of high electron density. Here, for the first time, we directly image hydrogen bond in real space by room-temperature scanning tunneling microscopy (STM) with the assistance of resonant tunneling effect in double barrier mode. STM observations demonstrate that the C=O:HO hydrogen bonds lifted several angstrom meters above metal surfaces appear shuttle-like features with a significant contrast along the direction connected the oxygen and hydrogen atoms of a single hydrogen bond. The off-center location of the summit and the variance of the appearance height for the hydrogen bond with scanning bias reveal that there are certain hybridizations between the electron orbitals of the involved oxygen and hydrogen atoms in the C=O:HO hydrogen bond.

  10. Time-varying wetting behavior on copper wafer treated by wet-etching

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Sheng-Hung; Wu, Chuan-Chang [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China); Wu, Hsing-Chen [Advanced Technology Materials Inc, Hsinchu 310, Taiwan, ROC (China); Cheng, Shao-Liang [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China); Sheng, Yu-Jane, E-mail: yjsheng@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Tsao, Heng-Kwong, E-mail: hktsao@cc.ncu.edu.tw [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China)

    2015-06-30

    Graphical abstract: - Highlights: • A thin oxide layer always remains on surfaces of Cu wafers after aqueous etching. • A pure Cu wafer is obtained by the HAc treatment and the water CA is about 45°. • The oxide layer and CA grow with time after the Cu wafer is exposed to air. • Surface roughness and hydrophobicity of pure Cu wafers grow rapidly in vacuum. - Abstract: The wet cleaning process in semiconductor fabrication often involves the immersion of the copper wafer into etching solutions and thereby its surface properties are significantly altered. The wetting behavior of a copper film deposited on silicon wafer is investigated after a short dip in various etching solutions. The etchants include glacial acetic acid and dilute solutions of nitric acid, hydrofluoric acid, and tetramethylammonium hydroxide. It was found that in most cases a thin oxide layer still remains on the surface of as-received Cu wafers when they are subject to etching treatments. However, a pure Cu wafer can be obtained by the glacial acetic acid treatment and its water contact angle (CA) is about 45°. As the pure Cu wafer is placed in the ambient condition, the oxide thickness grows rapidly to the range of 10–20 Å within 3 h and the CA on the hydrophilic surface also rises. In the vacuum, it is surprising to find that the CA and surface roughness of the pure Cu wafer can grow significantly. These interesting results may be attributed to the rearrangement of surface Cu atoms to reduce the surface free energy.

  11. Bonding Strength of Ceromer with Direct Laser Sintered, Ni-Cr-Based, and ZrO2 Metal Infrastructures After Er:YAG, Nd:YAG, and Ho:YAG Laser Surface Treatments-A Comparative In Vitro Study.

    Science.gov (United States)

    Gorler, Oguzhan; Ozdemir, Ali Kemal

    2016-08-01

    Laser modalities instead of conventional surface treatment techniques have been suggested to obtain an adequate micromechanical bonding between dental super- and infrastructures. The present study was undertaken to assess the effect of surface treatment with Ho:YAG, Er:YAG, and Nd:YAG laser modalities on the shear bond strength (SBS) of ceromer to different types of metal infrastructures in in vitro settings. The study specimens consisted of 40 direct laser sintered (DLS), 40 Ni-Cr-based, and 40 zirconium oxide (ZrO2) infrastructures. In each infrastructure group, the specimens were divided randomly into five treatment modalities (n = 8): no treatment (controls), sandblasting, Er:YAG, Nd:YAG, and Ho:YAG lasers. The DLS, Ni-Cr-based, and ZrO2 infrastructures were prepared in the final dimensions of 7 mm in diameter and 3 mm in thickness in line with the ISO 11405 standard. Ceromer as superstructure was applied to all the infrastructures after their surface treatments according to the selected treatment modality. SBS test was performed to test the effectiveness of surface treatments. A stereomicroscope was used to determine the changes in the surface morphology of specimens. Among the laser modalities and sandblasting, Ho:YAG laser caused the most important increase in the DLS and Ni-Cr-based infrastructures but sandblasting caused the most important increase in the ZrO2 infrastructure. In all the infrastructures, Nd:YAG laser has the least effectiveness, and Er:YAG laser makes an intermediate success. The stereomicroscopy images presented that the applications of laser surface treatments altered the surface in all the infrastructures. Overall, in current experimental settings, Ho:YAG, Nd:YAG, and Er:YAG lasers, in order of strength, are effective in improving the bonding of ceromer to all the infrastructures. Ho:YAG laser is more effective in the DLS and Ni-Cr-based infrastructures, but sandblasting is more effective in the ZrO2 infrastructure. The studied

  12. On the molecular basis of the activity of the antimalarial drug chloroquine: EXAFS-assisted DFT evidence of a direct Fe-N bond with free heme in solution

    Science.gov (United States)

    Macetti, Giovanni; Rizzato, Silvia; Beghi, Fabio; Silvestrini, Lucia; Lo Presti, Leonardo

    2016-02-01

    4-aminoquinoline antiplasmodials interfere with the biocrystallization of the malaria pigment, a key step of the malaria parasite metabolism. It is commonly believed that these drugs set stacking π···π interactions with the Fe-protoporphyrin scaffold of the free heme, even though the details of the heme:drug recognition process remain elusive. In this work, the local coordination of Fe(III) ions in acidic solutions of hematin at room temperature was investigated by extended x-ray absorption fine structure (EXAFS) spectroscopy in the 4.0-5.5 pH range, both in the presence and in the absence of the antimalarial drug chloroquine. EXAFS results were complemented by DFT simulations in polarizable continuum media to model solvent effects. We found evidence that a complex where the drug quinoline nitrogen is coordinated with the iron center might coexist with formerly proposed adduct geometries, based on stacking interactions. Charge-assisted hydrogen bonds among lateral chains of the two molecules play a crucial role in stabilizing this complex, whose formation is favored by the presence of lipid micelles. The direct Fe-N bond could reversibly block the axial position in the Fe 1st coordination shell in free heme, acting as an inhibitor for the crystallization of the malaria pigment without permanently hampering the catalytic activity of the redox center. These findings are discussed in the light of possible implications on the engineering of drugs able to thwart the adaptability of the malaria parasite against classical aminoquinoline-based therapies.

  13. Wire bonding in microelectronics

    CERN Document Server

    Harman, George G

    2010-01-01

    Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. Coverage includes: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fine-pitch, specialized-looping, soft-substrate, and extreme-temperature wire bo...

  14. 复合树脂核材料与牙本质黏结强度的实验研究%Experimental study of bonding strength between resin composite direct core build-up materials and dentin in vitro

    Institute of Scientific and Technical Information of China (English)

    俞长路; 陈梅梅; 叶茂昌

    2012-01-01

    目的 比较使用3种不同牙本质黏结剂时,2种复合树脂核材料与精细粒度车针预备的牙本质之间的微拉伸黏结强度.方法 本实验使用的2种复合树脂核材料为Bisfil-core和Luxacore,3种黏结剂为ONE-STEPRPLUS、Contax和ibond,各对应的组别为BO组、LO组、BC组、LC组、Bi组和Li组.18颗人类磨牙用于本实验,每组3颗牙齿.所有牙齿均去除冠部釉质,暴露出完整的表浅牙本质,并用精细粒度金钢砂车针预备牙本质.然后按照各厂家的说明完成黏结剂的应用并用2种核材料分别修复牙冠.牙齿在37℃的自来水中保存24 h后,沿与黏结面垂直的方向片切成厚约0.7 mm的薄片,然后修整黏结面,使其面积大约在1.0 mm2.样本在MTS Synergie100材料测试机上进行黏结强度测试,所得数据用方差分析和LSD检验进行统计学处理.结果 各组的黏结强度分别为BO组(27.34±6.52)MPa、LO组(36.49±11.74)MPa、BC组(23.78±9.03)MPa、LC组(34.35±13.35)MPa、Bi组(29.12±7.99)MPa、Li组(32.63±8.17)MPa.统计学分析显示,黏结强度的差异在不同黏结剂之间无统计学意义,在不同的核材料之间差异有统计学意义.结论 3种黏结剂均可以满足临床需要,流动性复合树脂核材料可以显著提高黏结强度.%Objective To compare the microtensile bonding strength between two resin composite direct core build - up materials and dentin prepared with a superfine - grit diamond bur when using three different dentin adhesives. Methods Two kinds of resin composite core build - up materials, Bisfil - core and Luxacore, and three kinds of adhesives, ONE - STEP O RPLUS, Contax and ibond, were used in this stud)'. The six corresponding groups were BO, LO, BC, LC, Bi, Li, respectively. Eighteen human molarswere randomly divided into six groups with three teeth in each group in this stud)'. The coronal enamel of all teeth was removed and the superficial dentin was exposed, which were then prepared

  15. Electron multi-beam technology for mask and wafer writing at 0.1nm address grid

    Science.gov (United States)

    Platzgummer, Elmar; Klein, Christof; Loeschner, Hans

    2013-03-01

    An overview of electron beam tool configurations is provided. The adoption of multi-beam writing is mandatory in order to fulfill industrial needs for 11nm HP nodes and below. IMS Nanofabrication realized a 50keV electron multibeam proof-of-concept (POC) tool confirming writing principles with 0.1nm address grid and lithography performance capability. The new architecture will be introduced for mask writing at first, but has also the potential for 1xmask (master template) and direct wafer writing. The POC system achieves the predicted 5nm 1sigma blur across the 82μm x 82μm array of 512 x 512 (262,144) programmable 20nm beams. 24nm HP has been demonstrated and complex patterns have been written in scanning stripe exposure mode. The first production worthy system for the 11nm HP mask node is scheduled for 2014 (Alpha), 2015 (Beta) and 1st generation HVM mask writer tools in 2016. Implementing a multi-axis column configuration, 50x / 100x productivity enhancements are possible for direct 300mm / 450mm wafer writing.

  16. Validation of thermodesorption method for analysis of semi-volatile organic compounds adsorbed on wafer surface.

    Science.gov (United States)

    Hayeck, Nathalie; Gligorovski, Sasho; Poulet, Irène; Wortham, Henri

    2014-05-01

    To prevent the degradation of the device characteristics it is important to detect the organic contaminants adsorbed on the wafers. In this respect, a reliable qualitative and quantitative analytical method for analysis of semi-volatile organic compounds which can adsorb on wafer surfaces is of paramount importance. Here, we present a new analytical method based on Wafer Outgassing System (WOS) coupled to Automated Thermal Desorber-Gas chromatography-Mass spectrometry (ATD-GC-MS) to identify and quantify volatile and semi-volatile organic compounds from 6", 8" and 12" wafers. WOS technique allows the desorption of organic compounds from one side of the wafers. This method was tested on three important airborne contaminants in cleanroom i.e. tris-(2-chloroethyl) phosphate (TCEP), tris-(2-chloroisopropyl) phosphate (TCPP) and diethyl phthalate (DEP). In addition, we validated this method for the analysis and quantification of DEP, TCEP and TCPP and we estimated the backside organic contamination which may contribute to the front side of the contaminated wafers. We are demonstrating that WOS/ATD-GC-MS is a suitable and highly efficient technique for desorption and quantitative analysis of organophosphorous compounds and phthalate ester which could be found on the wafer surface.

  17. Surface shape control of the workpiece in a double-spindle triple-workstation wafer grinder

    Institute of Scientific and Technical Information of China (English)

    Zhu Xianglong; Kang Renke; Dong Zhigang; Feng Guang

    2011-01-01

    Double-spindle triple-workstation (DSTW) ultra precision grinders are mainly used in production lines for manufacturing and back thinning large diameter (≥ 300 mm) silicon wafers for integrated circuits.It is important,but insufficiently studied,to control the wafer shape ground on a DSTW grinder by adjusting the inclination angles of the spindles and work tables.In this paper,the requirements of the inclination angle adjustment of the grinding spindles and work tables in DSTW wafer grinders are analyzed.A reasonable configuration of the grinding spindles and work tables in DSTW wafer grinders are proposed.Based on the proposed configuration,an adjustment method of the inclination angle of grinding spindles and work tables for DSTW wafer grinders is put forward.The mathematical models of wafer shape with the adjustment amount of inclination angles for both fine and rough grinding spindles are derived.The proposed grinder configuration and adjustment method will provide helpful instruction for DSTW wafer grinder design.

  18. Kajian Level Kadar Air dan Ukuran Partikel Bahan Pakan Terhadap Penampilan Fisik Wafer

    Directory of Open Access Journals (Sweden)

    Retno Iswarin Pujaningsih

    2013-04-01

    Full Text Available Study on the level of water content and particle size of feed ingredients to the physical appearance of wafer  ABSTRACT. This study attempted wafer manufacturing technology development of conventional feed ingredients. The benefit of wafer increase feed consumption and feed efficiency, increase the metabolizable energy content of the feed, kill pathogenic bacteria, reduce the amount of feed scattered, extending the storage time, ensure the balance of feed nutrients and vitamins to prevent oxidation. Research was continuing several research activities on wafer manufacturing technology that has been done and continues to be developed by the researchers. The long term goal of a series of research is to obtain basic information to the wafer manufacturing optimum quality and measurable. Specific target is to obtain basic information about the quality of the wafer on the level of water content and the use of a certain particle size. The research method used was experimental and analytical methods in the laboratory. The results showed that based on the test of physical qualities (moisture content, density, water absorption showed that the use of the level of moisture content up to 8% with a particle size of 10-20 mm feed material provides the best physical appearance of wafer.

  19. Sheet resistance uniformity in drive-in step for different multi-crystalline silicon wafer dispositions

    Energy Technology Data Exchange (ETDEWEB)

    Moussi, A.; Bouhafs, D.; Mahiou, L. [Laboratoire des Cellules Photovoltaiques, Unite de Developpement de la Technologie du Silicium, 2 Bd, Frantz Fanon, B.P. 140, 7 Merveilles Alger (Algeria); Belkaid, M.S. [Dep. Electronique, Faculte de Genie Electrique et Informatique, UMMTO (Algeria)

    2009-09-15

    In this work, we present a study of emitters realized using different configurations of the silicon wafers in the quartz boat. The phosphorous liquid source is sprayed onto p-type multi-crystalline silicon substrates and the drive-in is made at high temperature in a muffle furnace. Three different configurations of the wafers in the boat are tested: separated, back to back and compact block of wafers. A fourth configuration is also used in source-receptor mode. The emitter phosphorous concentration profile is obtained by SIMS analysis. The resulting emitters are characterized by sheet resistance measurements and a comparison is made between the wafers within the same batch and from one batch to another. The uniformity and the standard deviation of the sheet resistance are calculated in each case. The emitter sheet resistance mapping of the wafer set in the middle of the boat for a given process gives a mean R{sub sq} 14.66 {omega}/sq with a standard deviation of 1.76% and uniformity of 18.7%. Standard deviations of 2.116% and 1.559% are obtained for wafers in the batch when using the spaced and compact configurations, respectively. The standard deviation is reduced to 0.68% when the wafers are used in source/receptor mode. A comparison is also made between wafers with different dilution of phosphorous source in ethanol. From these results we can conclude that the compact configuration offers better uniformity and lower standard deviation. Furthermore, when combined with the source-receptor configuration these parameters are significantly improved. This study allows the experimenter to identify the technological parameters of the solar cell emitter manufacturing and target precisely the desired values of the sheet resistance while limiting the number of rejected wafers. (author)

  20. Test systems of the STS-XYTER2 ASIC: from wafer-level to in-system verification

    Science.gov (United States)

    Kasinski, Krzysztof; Zubrzycka, Weronika

    2016-09-01

    The STS/MUCH-XYTER2 ASIC is a full-size prototype chip for the Silicon Tracking System (STS) and Muon Chamber (MUCH) detectors in the new fixed-target experiment Compressed Baryonic Matter (CBM) at FAIR-center, Darmstadt, Germany. The STS assembly includes more than 14000 ASICs. The complicated, time-consuming, multi-step assembly process of the detector building blocks and tight quality assurance requirements impose several intermediate testing to be performed for verifying crucial assembly steps (e.g. custom microcable tab-bonding before wire-bonding to the PCB) and - if necessary - identifying channels or modules for rework. The chip supports the multi-level testing with different probing / contact methods (wafer probe-card, pogo-probes, in-system tests). A huge number of ASICs to be tested restricts the number and kind of tests possible to be performed within a reasonable time. The proposed architectures of test stand equipment and a brief summary of methodologies are presented in this paper.