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Sample records for direct memory access

  1. Remote direct memory access

    Archer, Charles J.; Blocksome, Michael A.

    2012-12-11

    Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

  2. Remote direct memory access over datagrams

    Grant, Ryan Eric; Rashti, Mohammad Javad; Balaji, Pavan; Afsahi, Ahmad

    2014-12-02

    A communication stack for providing remote direct memory access (RDMA) over a datagram network is disclosed. The communication stack has a user level interface configured to accept datagram related input and communicate with an RDMA enabled network interface card (NIC) via an NIC driver. The communication stack also has an RDMA protocol layer configured to supply one or more data transfer primitives for the datagram related input of the user level. The communication stack further has a direct data placement (DDP) layer configured to transfer the datagram related input from a user storage to a transport layer based on the one or more data transfer primitives by way of a lower layer protocol (LLP) over the datagram network.

  3. Direct Access to Working Memory Contents

    Bialkova, S.E.; Oberauer, K.

    2010-01-01

    Abstract. In two experiments participants held in working memory (WM) three digits in three different colors, and updated individual digits with the results of arithmetic equations presented in one of the colors. In the memory-access condition, a digit from WM had to be used as the first number in

  4. Direct access inter-process shared memory

    Brightwell, Ronald B; Pedretti, Kevin; Hudson, Trammell B

    2013-10-22

    A technique for directly sharing physical memory between processes executing on processor cores is described. The technique includes loading a plurality of processes into the physical memory for execution on a corresponding plurality of processor cores sharing the physical memory. An address space is mapped to each of the processes by populating a first entry in a top level virtual address table for each of the processes. The address space of each of the processes is cross-mapped into each of the processes by populating one or more subsequent entries of the top level virtual address table with the first entry in the top level virtual address table from other processes.

  5. Accessing memory

    Yoon, Doe Hyun; Muralimanohar, Naveen; Chang, Jichuan; Ranganthan, Parthasarathy

    2017-09-26

    A disclosed example method involves performing simultaneous data accesses on at least first and second independently selectable logical sub-ranks to access first data via a wide internal data bus in a memory device. The memory device includes a translation buffer chip, memory chips in independently selectable logical sub-ranks, a narrow external data bus to connect the translation buffer chip to a memory controller, and the wide internal data bus between the translation buffer chip and the memory chips. A data access is performed on only the first independently selectable logical sub-rank to access second data via the wide internal data bus. The example method also involves locating a first portion of the first data, a second portion of the first data, and the second data on the narrow external data bus during separate data transfers.

  6. Fast memory with direct access for nuclear physics

    Alexandre, B.; Riou, C.; Veler, J.C.

    1967-07-01

    This memory with thin ferromagnetic layers initially devoted to code the spatial position of sparkles in a sonic chamber must allow to give a more general interest in nuclear physics. We study the organisation of the memory and we present a summary of its technical characteristics [fr

  7. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    Blocksome, Michael A.; Mamidala, Amith R.

    2013-09-03

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  8. Quantum random access memory

    Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

    2007-01-01

    A random access memory (RAM) uses n bits to randomly address N=2^n distinct memory cells. A quantum random access memory (qRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that exponentially reduces the requirements for a memory call: O(log N) switches need be thrown instead of the N used in conventional (classical or quantum) RAM designs. This yields a more robust qRAM algorithm, as it in general requires entanglement among exponentially l...

  9. The special role of item-context associations in the direct-access region of working memory.

    Campoy, Guillermo

    2017-09-01

    The three-embedded-component model of working memory (WM) distinguishes three representational states corresponding to three WM regions: activated long-term memory, direct-access region (DAR), and focus of attention. Recent neuroimaging research has revealed that access to the DAR is associated with enhanced hippocampal activity. Because the hippocampus mediates the encoding and retrieval of item-context associations, it has been suggested that this hippocampal activation is a consequence of the fact that item-context associations are particularly strong and accessible in the DAR. This study provides behavioral evidence for this view using an item-recognition task to assess the effect of non-intentional encoding and maintenance of item-location associations across WM regions. Five pictures of human faces were sequentially presented in different screen locations followed by a recognition probe. Visual cues immediately preceding the probe indicated the location thereof. When probe stimuli appeared in the same location that they had been presented within the memory set, the presentation of the cue was expected to elicit the activation of the corresponding WM representation through the just-established item-location association, resulting in faster recognition. Results showed this same-location effect, but only for items that, according to their serial position within the memory set, were held in the DAR.

  10. Fencing network direct memory access data transfers in a parallel active messaging interface of a parallel computer

    Blocksome, Michael A.; Mamidala, Amith R.

    2015-07-07

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to a deterministic data communications network through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and the deterministic data communications network; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  11. Atomic memory access hardware implementations

    Ahn, Jung Ho; Erez, Mattan; Dally, William J

    2015-02-17

    Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

  12. Comparing implicit and explicit semantic access of direct and indirect word pairs in schizophrenia to evaluate models of semantic memory.

    Neill, Erica; Rossell, Susan Lee

    2013-02-28

    Semantic memory deficits in schizophrenia (SZ) are profound, yet there is no research comparing implicit and explicit semantic processing in the same participant sample. In the current study, both implicit and explicit priming are investigated using direct (LION-TIGER) and indirect (LION-STRIPES; where tiger is not displayed) stimuli comparing SZ to healthy controls. Based on a substantive review (Rossell and Stefanovic, 2007) and meta-analysis (Pomarol-Clotet et al., 2008), it was predicted that SZ would be associated with increased indirect priming implicitly. Further, it was predicted that SZ would be associated with abnormal indirect priming explicitly, replicating earlier work (Assaf et al., 2006). No specific hypotheses were made for implicit direct priming due to the heterogeneity of the literature. It was hypothesised that explicit direct priming would be intact based on the structured nature of this task. The pattern of results suggests (1) intact reaction time (RT) and error performance implicitly in the face of abnormal direct priming and (2) impaired RT and error performance explicitly. This pattern confirms general findings regarding implicit/explicit memory impairments in SZ whilst highlighting the unique pattern of performance specific to semantic priming. Finally, priming performance is discussed in relation to thought disorder and length of illness. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

  13. Direct access to INIS

    Zheludev, I.S.; Romanenko, A.G.

    1981-01-01

    Librarians, researchers, and information specialists throughout the world now have the opportunity for direct access to coverage of almost 95% of the world's literature dealing with the peaceful uses of atomic energy and nuclear science. This opportunity has been provided by the International Nuclear Information System (INIS) of the IAEA. INIS, with the voluntary collaboration of more than 60 of the Agency's Member States, maintains a comprehensive, computer-resident data-base, containing the bibliographic details plus informative abstracts of the bulk of the world's literature on nuclear science and technology. Since this data-base is growing at a rate of 75,000 items per year, and already contains more than 500,000 items, it is obviously important to be able to search this collection conveniently and efficiently. The usefulness of this ability is enhanced when other data-bases on related subjects are made available on an information network. During the early 1970s, on-line interrogation of large bibliographic data-bases became the accepted method for searching this type of information resource. Direct interaction between the searcher and the data-base provides quick feed-back resulting in improved literature listings for launching research and development projects. On-line access enables organizations which cannot store a large data-base on their own computer to expand the information resources at their command. Because of these advantages, INIS undertook to extend to interested Member States on-line access to its data-base in Vienna

  14. Multichannel analyzer using the direct-memory-access channel in a personal computer; Mnogokanal`nyj analizator v personal`nom komp`yutere, ispol`zuyushchij kanal pryamogo dostupa k pamyati

    Georgiev, G; Vankov, I; Dimitrov, L [Incn. Yadernykh Issledovanij i Yadernoj Ehnergetiki Bolgarskoj Akademii Nuk, Sofiya (Bulgaria); Peev, I [Firma TOIVEL, Sofiya (Bulgaria)

    1996-12-31

    Paper describes a multichannel analyzer of the spectrometry data developed on the basis of a personal computer memory and a controlled channel of direct access. Analyzer software covering a driver and program of spectrum display control is studied. 2 figs.

  15. Architectures for a quantum random access memory

    Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

    2008-01-01

    A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n-bit addresses can access 2^n memory sites. Any design for a RAM or qRAM then requires O(2^n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices ...

  16. Dynamic computing random access memory

    Traversa, F L; Bonani, F; Pershin, Y V; Di Ventra, M

    2014-01-01

    The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200–2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology. (paper)

  17. Accessibility Limits Recall from Visual Working Memory

    Rajsic, Jason; Swan, Garrett; Wilson, Daryl E.; Pratt, Jay

    2017-01-01

    In this article, we demonstrate limitations of accessibility of information in visual working memory (VWM). Recently, cued-recall has been used to estimate the fidelity of information in VWM, where the feature of a cued object is reproduced from memory (Bays, Catalao, & Husain, 2009; Wilken & Ma, 2004; Zhang & Luck, 2008). Response…

  18. Aspects of GPU perfomance in algorithms with random memory access

    Kashkovsky, Alexander V.; Shershnev, Anton A.; Vashchenkov, Pavel V.

    2017-10-01

    The numerical code for solving the Boltzmann equation on the hybrid computational cluster using the Direct Simulation Monte Carlo (DSMC) method showed that on Tesla K40 accelerators computational performance drops dramatically with increase of percentage of occupied GPU memory. Testing revealed that memory access time increases tens of times after certain critical percentage of memory is occupied. Moreover, it seems to be the common problem of all NVidia's GPUs arising from its architecture. Few modifications of the numerical algorithm were suggested to overcome this problem. One of them, based on the splitting the memory into "virtual" blocks, resulted in 2.5 times speed up.

  19. Fast Magnetoresistive Random-Access Memory

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

  20. Architectures for a quantum random access memory

    Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

    2008-11-01

    A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n -bit addresses can access 2n memory sites. Any design for a RAM or qRAM then requires O(2n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices impractical, due to the difficulty of constructing and operating coherent devices with large numbers of quantum logic gates. Here we analyze two different RAM architectures (the conventional fanout and the “bucket brigade”) and propose some proof-of-principle implementations, which show that, in principle, only O(n) two-qubit physical interactions need take place during each qRAM call. That is, although a qRAM needs O(2n) quantum logic gates, only O(n) need to be activated during a memory call. The resulting decrease in resources could give rise to the construction of large qRAMs that could operate without the need for extensive quantum error correction.

  1. Notified Access: Extending Remote Memory Access Programming Models for Producer-Consumer Synchronization

    Belli, Roberto; Hoefler, Torsten

    2015-01-01

    Remote Memory Access (RMA) programming enables direct access to low-level hardware features to achieve high performance for distributed-memory programs. However, the design of RMA programming schemes focuses on the memory access and less on the synchronization. For example, in contemporary RMA programming systems, the widely used producer-consumer pattern can only be implemented inefficiently, incurring in an overhead of an additional round-trip message. We propose Notified Access, a scheme where the target process of an access can receive a completion notification. This scheme enables direct and efficient synchronization with a minimum number of messages. We implement our scheme in an open source MPI-3 RMA library and demonstrate lower overheads (two cache misses) than other point-to-point synchronization mechanisms for each notification. We also evaluate our implementation on three real-world benchmarks, a stencil computation, a tree computation, and a Colicky factorization implemented with tasks. Our scheme always performs better than traditional message passing and other existing RMA synchronization schemes, providing up to 50% speedup on small messages. Our analysis shows that Notified Access is a valuable primitive for any RMA system. Furthermore, we provide guidance for the design of low-level network interfaces to support Notified Access efficiently.

  2. Notified Access: Extending Remote Memory Access Programming Models for Producer-Consumer Synchronization

    Belli, Roberto

    2015-05-01

    Remote Memory Access (RMA) programming enables direct access to low-level hardware features to achieve high performance for distributed-memory programs. However, the design of RMA programming schemes focuses on the memory access and less on the synchronization. For example, in contemporary RMA programming systems, the widely used producer-consumer pattern can only be implemented inefficiently, incurring in an overhead of an additional round-trip message. We propose Notified Access, a scheme where the target process of an access can receive a completion notification. This scheme enables direct and efficient synchronization with a minimum number of messages. We implement our scheme in an open source MPI-3 RMA library and demonstrate lower overheads (two cache misses) than other point-to-point synchronization mechanisms for each notification. We also evaluate our implementation on three real-world benchmarks, a stencil computation, a tree computation, and a Colicky factorization implemented with tasks. Our scheme always performs better than traditional message passing and other existing RMA synchronization schemes, providing up to 50% speedup on small messages. Our analysis shows that Notified Access is a valuable primitive for any RMA system. Furthermore, we provide guidance for the design of low-level network interfaces to support Notified Access efficiently.

  3. Introduction to magnetic random-access memory

    Dieny, Bernard; Lee, Kyung-Jin

    2017-01-01

    Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic mat rials and devices. It presents the bas...

  4. Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory

    Luís Vitório Cargnini

    2014-08-01

    Full Text Available Static random access memory (SRAM is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM is a candidate technology to replace SRAM, assuming appropriate dimensioning given an operating threshold voltage. The write current of spin transfer torque (STT-MRAM is a known limitation; however, this has been recently mitigated by leveraging perpendicular magnetic tunneling junctions. In this article, we present a comprehensive comparison of spin transfer torque-MRAM (STT-MRAM and SRAM cache set banks. The non-volatility of STT-MRAM allows the definition of new instant on/off policies and leakage current optimizations. Through our experiments, we demonstrate that STT-MRAM is a candidate for the memory hierarchy of embedded systems, due to the higher densities and reduced leakage of MRAM.We demonstrate that adopting STT-MRAM in L1 and L2 caches mitigates the impact of higher write latencies and increased current draw due to the use of MRAM. With the correct system-on-chip (SoC design, we believe that STT-MRAM is a viable alternative to SRAM, which minimizes leakage current and the total power consumed by the SoC.

  5. Directed Forgetting of Recently Recalled Autobiographical Memories

    Barnier, Amanda J.; Conway, Martin A.; Mayoh, Lyndel; Speyer, Joanne; Avizmil, Orit; Harris, Celia B.

    2007-01-01

    In 6 experiments, the authors investigated list-method directed forgetting of recently recalled autobiographical memories. Reliable directed forgetting effects were observed across all experiments. In 4 experiments, the authors examined the impact of memory valence on directed forgetting. The forget instruction impaired recall of negative,…

  6. Emerging Directions in Emotional Episodic Memory

    Dolcos, Florin; Katsumi, Yuta; Weymar, Mathias; Moore, Matthew; Tsukiura, Takashi; Dolcos, Sanda

    2017-01-01

    Building upon the existing literature on emotional memory, the present review examines emerging evidence from brain imaging investigations regarding four research directions: (1) Social Emotional Memory, (2) The Role of Emotion Regulation in the Impact of Emotion on Memory, (3) The Impact of Emotion on Associative or Relational Memory, and (4) The Role of Individual Differences in Emotional Memory. Across these four domains, available evidence demonstrates that emotion- and memory-related medial temporal lobe brain regions (amygdala and hippocampus, respectively), together with prefrontal cortical regions, play a pivotal role during both encoding and retrieval of emotional episodic memories. This evidence sheds light on the neural mechanisms of emotional memories in healthy functioning, and has important implications for understanding clinical conditions that are associated with negative affective biases in encoding and retrieving emotional memories. PMID:29255432

  7. Method and apparatus for managing access to a memory

    DeBenedictis, Erik

    2017-08-01

    A method and apparatus for managing access to a memory of a computing system. A controller transforms a plurality of operations that represent a computing job into an operational memory layout that reduces a size of a selected portion of the memory that needs to be accessed to perform the computing job. The controller stores the operational memory layout in a plurality of memory cells within the selected portion of the memory. The controller controls a sequence by which a processor in the computing system accesses the memory to perform the computing job using the operational memory layout. The operational memory layout reduces an amount of energy consumed by the processor to perform the computing job.

  8. Hardware Compilation of Application-Specific Memory-Access Interconnect

    Venkataramani, Girish; Bjerregaard, Tobias; Chelcea, Tiberiu

    2006-01-01

    operations dependent on memory reads. More fundamental is that dependences between accesses may not be statically provable (e.g., if the specification language permits pointers), which introduces memory-consistency problems. Addressing these issues with static scheduling results in overly conservative...... enables specifications to include arbitrary memory references (e.g., pointers) and allows the memory system to incorporate features that might cause the latency of a memory access to vary dynamically. This results in raising the level of abstraction in the input specification, enabling faster design times...

  9. Self-Testing Static Random-Access Memory

    Chau, Savio; Rennels, David

    1991-01-01

    Proposed static random-access memory for computer features improved error-detecting and -correcting capabilities. New self-testing scheme provides for detection and correction of errors at any time during normal operation - even while data being written into memory. Faults in equipment causing errors in output data detected by repeatedly testing every memory cell to determine whether it can still store both "one" and "zero", without destroying data stored in memory.

  10. Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

    Ohmacht, Martin

    2017-08-15

    In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

  11. Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

    Ohmacht, Martin

    2014-09-09

    In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

  12. Direct access: how is it working?

    Turner, S; Ross, M

    2017-02-10

    Aim The aim of this study was to identify and survey dental hygienists and therapists working in direct access practices in the UK, obtain their views on its benefits and disadvantages, establish which treatments they provided, and what barriers they had encountered.Method The study used a purposive sample of GDC-registered hygienists and therapists working in practices offering direct access, identified through a 'Google' search. An online survey was set up through the University of Edinburgh, and non-responses followed up by post.Results The initial search identified 243 individuals working in direct access practices. Where a practice listed more than one hygienist/therapist, one was randomly selected. This gave a total of 179 potential respondents. Eighty-six responses were received, representing a response rate of 48%. A large majority of respondents (58, 73%) were favourable in their view of the GDC decision to allow direct access, and most thought advantages outnumbered disadvantages for patients, hygienists, therapists and dentists. There were no statistically significant differences in views between hygienists and therapists. Although direct access patients formed a small minority of their caseload for most respondents, it is estimated that on average respondents saw approximately 13 per month. Treatment was mainly restricted to periodontal work, irrespective of whether the respondent was singly or dually qualified. One third of respondents reported encountering barriers to successful practice, including issues relating to teamwork and dentists' unfavourable attitudes. However, almost two thirds (64%) felt that direct access had enhanced their job satisfaction, and 45% felt their clinical skills had increased.Discussion Comments were mainly positive, but sometimes raised worrying issues, for example in respect to training, lack of dental nurse support and the limited availability of periodontal treatment under NHS regulations.

  13. 75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

    2010-03-25

    ... Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of... semiconductors and products containing same, including memory modules, by reason of infringement of certain... importation of certain dynamic random access memory semiconductors or products containing the same, including...

  14. Routes to the past: Neural substrates of direct and generative autobiographical memory retrieval

    Addis, Donna Rose; Knapp, Katie; Roberts, Reece P.; Schacter, Daniel L.

    2011-01-01

    Models of autobiographical memory propose two routes to retrieval depending on cue specificity. When available cues are specific and personally-relevant, a memory can be directly accessed. However, when available cues are generic, one must engage a generative retrieval process to produce more specific cues to successfully access a relevant memory. The current study sought to characterize the neural bases of these retrieval processes. During functional magnetic resonance imaging (fMRI), partic...

  15. Partitioning and Scheduling DSP Applications with Maximal Memory Access Hiding

    Sha Edwin Hsing-Mean

    2002-01-01

    Full Text Available This paper presents an iteration space partitioning scheme to reduce the CPU idle time due to the long memory access latency. We take into consideration both the data accesses of intermediate and initial data. An algorithm is proposed to find the largest overlap for initial data to reduce the entire memory traffic. In order to efficiently hide the memory latency, another algorithm is developed to balance the ALU and memory schedules. The experiments on DSP benchmarks show that the algorithms significantly outperform the known existing methods.

  16. Efficient accesses of data structures using processing near memory

    Jayasena, Nuwan S.; Zhang, Dong Ping; Diez, Paula Aguilera

    2018-05-22

    Systems, apparatuses, and methods for implementing efficient queues and other data structures. A queue may be shared among multiple processors and/or threads without using explicit software atomic instructions to coordinate access to the queue. System software may allocate an atomic queue and corresponding queue metadata in system memory and return, to the requesting thread, a handle referencing the queue metadata. Any number of threads may utilize the handle for accessing the atomic queue. The logic for ensuring the atomicity of accesses to the atomic queue may reside in a management unit in the memory controller coupled to the memory where the atomic queue is allocated.

  17. Memory for Recently Accessed Visual Attributes

    Jiang, Yuhong V.; Shupe, Joshua M.; Swallow, Khena M.; Tan, Deborah H.

    2016-01-01

    Recent reports have suggested that the attended features of an item may be rapidly forgotten once they are no longer relevant for an ongoing task (attribute amnesia). This finding relies on a surprise memory procedure that places high demands on declarative memory. We used intertrial priming to examine whether the representation of an item's…

  18. Database architecture optimized for the new bottleneck: Memory access

    P.A. Boncz (Peter); S. Manegold (Stefan); M.L. Kersten (Martin)

    1999-01-01

    textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

  19. Optimizing Database Architecture for the New Bottleneck: Memory Access

    S. Manegold (Stefan); P.A. Boncz (Peter); M.L. Kersten (Martin)

    2000-01-01

    textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

  20. Fast, Accurate Memory Architecture Simulation Technique Using Memory Access Characteristics

    小野, 貴継; 井上, 弘士; 村上, 和彰

    2007-01-01

    This paper proposes a fast and accurate memory architecture simulation technique. To design memory architecture, the first steps commonly involve using trace-driven simulation. However, expanding the design space makes the evaluation time increase. A fast simulation is achieved by a trace size reduction, but it reduces the simulation accuracy. Our approach can reduce the simulation time while maintaining the accuracy of the simulation results. In order to evaluate validity of proposed techniq...

  1. An introduction to direct access storage devices

    Sierra, Hugh M

    2012-01-01

    This book presents an exposition of the technology, design, organization, and structure of direct access storage devices (disk drives). It includes a discussion of the evolution of the technology (magnetic recording) and an assessment of other storage technologies, including optical recording. Examples of codes used in past implementations of disk drives as well as an application of disk drive usage dictated by reliability considerations are also included. The presentation assumes a minimum knowledge of magnetic recording, servomechanism design, and coding.

  2. More than a feeling: Emotional cues impact the access and experience of autobiographical memories.

    Sheldon, Signy; Donahue, Julia

    2017-07-01

    Remembering is impacted by several factors of retrieval, including the emotional content of a memory cue. Here we tested how musical retrieval cues that differed on two dimensions of emotion-valence (positive and negative) and arousal (high and low)-impacted the following aspects of autobiographical memory recall: the response time to access a past personal event, the experience of remembering (ratings of memory vividness), the emotional content of a cued memory (ratings of event arousal and valence), and the type of event recalled (ratings of event energy, socialness, and uniqueness). We further explored how cue presentation affected autobiographical memory retrieval by administering cues of similar arousal and valence levels in a blocked fashion to one half of the tested participants, and randomly to the other half. We report three main findings. First, memories were accessed most quickly in response to musical cues that were highly arousing and positive in emotion. Second, we observed a relation between a cue and the elicited memory's emotional valence but not arousal; however, both the cue valence and arousal related to the nature of the recalled event. Specifically, high cue arousal led to lower memory vividness and uniqueness ratings, but cues with both high arousal and positive valence were associated with memories rated as more social and energetic. Finally, cue presentation impacted both how quickly and specifically memories were accessed and how cue valence affected the memory vividness ratings. The implications of these findings for views of how emotion directs the access to memories and the experience of remembering are discussed.

  3. Quantum Secure Direct Communication with Quantum Memory.

    Zhang, Wei; Ding, Dong-Sheng; Sheng, Yu-Bo; Zhou, Lan; Shi, Bao-Sen; Guo, Guang-Can

    2017-06-02

    Quantum communication provides an absolute security advantage, and it has been widely developed over the past 30 years. As an important branch of quantum communication, quantum secure direct communication (QSDC) promotes high security and instantaneousness in communication through directly transmitting messages over a quantum channel. The full implementation of a quantum protocol always requires the ability to control the transfer of a message effectively in the time domain; thus, it is essential to combine QSDC with quantum memory to accomplish the communication task. In this Letter, we report the experimental demonstration of QSDC with state-of-the-art atomic quantum memory for the first time in principle. We use the polarization degrees of freedom of photons as the information carrier, and the fidelity of entanglement decoding is verified as approximately 90%. Our work completes a fundamental step toward practical QSDC and demonstrates a potential application for long-distance quantum communication in a quantum network.

  4. Emotion, directed forgetting, and source memory.

    Otani, Hajime; Libkuman, Terry M; Goernert, Phillip N; Kato, Koichi; Migita, Mai; Freehafer, Sarah E; Landow, Michael P

    2012-08-01

    We investigated the role of emotion on item and source memory using the item method of directed forgetting (DF) paradigm. We predicted that emotion would produce source memory impairment because emotion would make it more difficult to distinguish between to-be-remembered (R items) and to-be-forgotten items (F items) by making memory strength of R and F items similar to each other. Participants were presented with negatively arousing, positively arousing, and neutral pictures. After each picture, they received an instruction to remember or forget the picture. At retrieval, participants were asked to recall both R and F items and indicate whether each item was an R or F item. Recall was higher for the negatively arousing than for the positively arousing or neutral pictures. Further, DF occurred for the positively arousing and neutral pictures, whereas DF was not significant for the negatively arousing pictures. More importantly, the negatively arousing pictures, particularly the ones with violent content, showed a higher tendency of producing misattribution errors than the other picture types, supporting the notion that negative emotion may produce source memory impairment, even though it is still not clear whether the impairment occurs at encoding or retrieval. ©2011 The British Psychological Society.

  5. Hand Shape Affects Access to Memories

    K. Dijkstra (Katinka); M.P. Kaschak; R.A. Zwaan (Rolf)

    2008-01-01

    textabstractThe present study examined the ways that body posture facilitated retrieval of autobiographical memories in more detail by focusing on two aspects of congruence in position of a specific body part: hand shape and hand orientation. Hand shape is important in the tactile perception and

  6. Cue generation and memory construction in direct and generative autobiographical memory retrieval.

    Harris, Celia B; O'Connor, Akira R; Sutton, John

    2015-05-01

    Theories of autobiographical memory emphasise effortful, generative search processes in memory retrieval. However recent research suggests that memories are often retrieved directly, without effortful search. We investigated whether direct and generative retrieval differed in the characteristics of memories recalled, or only in terms of retrieval latency. Participants recalled autobiographical memories in response to cue words. For each memory, they reported whether it was retrieved directly or generatively, rated its visuo-spatial perspective, and judged its accompanying recollective experience. Our results indicated that direct retrieval was commonly reported and was faster than generative retrieval, replicating recent findings. The characteristics of directly retrieved memories differed from generatively retrieved memories: directly retrieved memories had higher field perspective ratings and lower observer perspective ratings. However, retrieval mode did not influence recollective experience. We discuss our findings in terms of cue generation and content construction, and the implication for reconstructive models of autobiographical memory. Copyright © 2015 Elsevier Inc. All rights reserved.

  7. Software Prefetching for Indirect Memory Accesses

    Ainsworth, Sam; Jones, Timothy

    2017-01-01

    Many modern data processing and HPC workloads are heavily memory-latency bound. A tempting proposition to solve this is software prefetching, where special non-blocking loads are used to bring data into the cache hierarchy just before being required. However, these are difficult to insert to effectively improve performance, and techniques for automatic insertion are currently limited. This paper develops a novel compiler pass to automatically generate software prefetches for indirect mem...

  8. An Investigation of Unified Memory Access Performance in CUDA

    Landaverde, Raphael; Zhang, Tiansheng; Coskun, Ayse K.; Herbordt, Martin

    2015-01-01

    Managing memory between the CPU and GPU is a major challenge in GPU computing. A programming model, Unified Memory Access (UMA), has been recently introduced by Nvidia to simplify the complexities of memory management while claiming good overall performance. In this paper, we investigate this programming model and evaluate its performance and programming model simplifications based on our experimental results. We find that beyond on-demand data transfers to the CPU, the GPU is also able to request subsets of data it requires on demand. This feature allows UMA to outperform full data transfer methods for certain parallel applications and small data sizes. We also find, however, that for the majority of applications and memory access patterns, the performance overheads associated with UMA are significant, while the simplifications to the programming model restrict flexibility for adding future optimizations. PMID:26594668

  9. Accessing forgotten memory traces from long-term memory via visual movements

    Estela eCamara

    2014-11-01

    Full Text Available Because memory retrieval often requires overt responses, it is difficult to determine to what extend forgetting occurs as a problem in explicit accessing of long-term memory traces. In this study, we used eye-tracking measures in combination with a behavioural task that favoured high forgetting rates to investigate the existence of memory traces from long-term memory in spite of failure in accessing them consciously. In 2 experiments, participants were encouraged to encode a large set of sound-picture-location associations. In a later test, sounds were presented and participants were instructed to visually scan, before a verbal memory report, for the correct location of the associated pictures in an empty screen. We found the reactivation of associated memories by sound cues at test biased oculomotor behaviour towards locations congruent with memory representations, even when participants failed to consciously provide a memory report of it. These findings reveal the emergence of a memory-guided behaviour that can be used to map internal representations of forgotten memories from long-term memory.

  10. Neutron detection using soft errors in dynamic Random Access Memories

    Darambara, D.G.; Spyrou, N.M.

    1994-01-01

    The purpose of this paper is to present results from experiments that have been performed to show the memory cycle time dependence of the soft errors produced by the interaction of alpha particles with dynamic random access memory devices, with a view to using these as position sensitive detectors. Furthermore, a preliminary feasibility study being carried out indicates the use of dynamic RAMs as neutron detectors by the utilization of (n, α) capture reactions in a Li converter placed on the top of the active area of the memory chip. ((orig.))

  11. Consciousness: physiological dependence on rapid memory access.

    Hudson, Arthur J

    2009-01-01

    Consciousness develops from birth during the early months as the senses and other nervous system functions mature sufficiently to receive, process and store information. Among these is the ascending reticular activating (arousal) system in the brain stem that is responsible for wakefulness and was proposed by Penfield and Jasper more than 50 years ago as the "controlling mechanism for states of consciousness". This concept has remained the most advanced physiological interpretation of consciousness although recent developments offer greater insights into its nature. The ascending arousal system is the source of activation of the thalamocortical and cortical mechanisms for sensory input and facilitates the rapid matching of sensory input and the binding of memory during cognitive processing. Nonetheless, it is proposed that memory is the critical element through which our connection with the world exists without which, despite a fully functional arousal system, consciousness as we know it could not exist. Evidence is presented in support of this concept in addition to the physiological difficulties that must be resolved if consciousness is to be understood.

  12. Direct access tariffs and barriers to choice

    Levson, D.

    1999-01-01

    The current situation of the power market in Alberta was reviewed. Based on this review is was concluded that the province is a long way from being a competitive, liquid power market. Further, it was predicted that unless large power purchasers get actively involved in managing their options, identify realistic and competitive supply options and actively campaign for the removal of barriers to choice, they will experience significant cost increases in the year 2001 and beyond, due in large measure to the market power exercised by the four major utilities (TAU, EPCOR, APL and Powerex). Barriers to new supply such as the high cost of standby, uncertainties about transmission and natural gas prices, the delays to cogeneration caused by low oil prices, and the design of direct access tariffs by utilities, were also explored. The cumulative contribution of these factors to uncertainties in pool price, fixed price and transmission and distribution costs were outlined

  13. Interacting Memory Systems—Does EEG Alpha Activity Respond to Semantic Long-Term Memory Access in a Working Memory Task?

    Barbara Berger

    2014-12-01

    Full Text Available Memory consists of various individual processes which form a dynamic system co-ordinated by central (executive functions. The episodic buffer as direct interface between episodic long-term memory (LTM and working memory (WM is fairly well studied but such direct interaction is less clear in semantic LTM. Here, we designed a verbal delayed-match-to-sample task specifically to differentiate between pure information maintenance and mental manipulation of memory traces with and without involvement of access to semantic LTM. Task-related amplitude differences of electroencephalographic (EEG oscillatory brain activity showed a linear increase in frontal-midline theta and linear suppression of parietal beta amplitudes relative to memory operation complexity. Amplitude suppression at upper alpha frequency, which was previously found to indicate access to semantic LTM, was only sensitive to mental manipulation in general, irrespective of LTM involvement. This suggests that suppression of upper EEG alpha activity might rather reflect unspecific distributed cortical activation during complex mental processes than accessing semantic LTM.

  14. Dataflow models for shared memory access latency analysis

    Staschulat, Jan; Bekooij, Marco Jan Gerrit

    2009-01-01

    Performance analysis of applications in multi-core platforms is challenging because of temporal interference while accessing shared resources. Especially, memory arbiters introduce a non-constant delay which signicantly in uences the execution time of a task. In this paper, we selected a

  15. Access time optimization of SRAM memory with statistical yield constraint

    Doorn, T.S.; Maten, ter E.J.W.; Di Bucchianico, A.; Beelen, T.G.J.; Janssen, H.H.J.M.

    2012-01-01

    A product may fail when design parameters are subject to large deviations. To guarantee yield one likes to determine bounds on the parameter range such that the fail probability P_fail is small. For Static Random Access Memory (SRAM) characteristics like Static Noise Margin and Read Current,

  16. Attentional priorities and access to short-term memory

    Gillebert, Celine; Dyrholm, Mads; Vangkilde, Signe Allerup

    2012-01-01

    The intraparietal sulcus (IPS) has been implicated in selective attention as well as visual short-term memory (VSTM). To contrast mechanisms of target selection, distracter filtering, and access to VSTM, we combined behavioral testing, computational modeling and functional magnetic resonance......, thereby displaying a significant interaction between the two factors. The interaction between target and distracter set size in IPS could not be accounted for by a simple explanation in terms of number of items accessing VSTM. Instead, it led us to a model where items accessing VSTM receive differential...

  17. Neural Correlates of Direct and Indirect Suppression of Autobiographical Memories.

    Noreen, Saima; O'Connor, Akira R; MacLeod, Malcolm D

    2016-01-01

    Research indicates that there are two possible mechanisms by which particular target memories can be intentionally forgotten. Direct suppression, which involves the suppression of the unwanted memory directly, and is dependent on a fronto-hippocampal modulatory process, and, memory substitution, which includes directing one's attention to an alternative memory in order to prevent the unwanted memory from coming to mind, and involves engaging the caudal prefrontal cortex (cPFC) and the mid-ventrolateral prefrontal cortex (VLPFC) regions. Research to date, however, has investigated the neural basis of memory suppression of relatively simple information. The aim of the current study was to use fMRI to identify the neural mechanisms associated with the suppression of autobiographical memories. In the present study, 22 participants generated memories in response to a series of cue words. In a second session, participants learnt these cue-memory pairings, and were subsequently presented with a cue word and asked either to recall (think) or to suppress (no-think) the associated memory, or to think of an alternative memory in order to suppress the original memory (memory-substitution). Our findings demonstrated successful forgetting effects in the no-think and memory substitution conditions. Although we found no activation in the dorsolateral prefrontal cortex, there was reduced hippocampal activation during direct suppression. In the memory substitution condition, however, we failed to find increased activation in the cPFC and VLPFC regions. Our findings suggest that the suppression of autobiographical memories may rely on different neural mechanisms to those established for other types of material in memory.

  18. Neural Correlates of Direct and Indirect Suppression of Autobiographical Memories

    Saima eNoreen

    2016-03-01

    Full Text Available Research indicates that there are two possible mechanisms by which particular target memories can be intentionally forgotten. Direct suppression, which involves the suppression of the unwanted memory directly, and is dependent on a fronto-hippocampal modulatory process, and, memory substitution, which includes directing one's attention to an alternative memory in order to prevent the unwanted memory from coming to mind, and involves engaging the caudal prefrontal cortex (cPFC and the mid-ventrolateral prefrontal cortex (VLPFC regions. Research to date, however, has investigated the neural basis of memory suppression of relatively simple information. The aim of the current study was to use fMRI to identify the neural mechanisms associated with the suppression of autobiographical memories. In the present study, 22 participants generated memories in response to a series of cue words. In a second session, participants learnt these cue-memory pairings, and were subsequently presented with a cue word and asked either to recall (think or to suppress (no-think the associated memory, or to think of an alternative memory in order to suppress the original memory (memory-substitution. Our findings demonstrated successful forgetting effects in the no-think and memory substitution conditions. Although we found no activation in the dorsolateral prefrontal cortex there was reduced hippocampal activation during direct suppression. In the memory substitution condition, however, we failed to find increased activation in the cPFC and VLPFC regions. Our findings suggest that the suppression of autobiographical memories may rely on different neural mechanisms to those established for other types of material in memory.

  19. Individual differences in memory span: the contribution of rehearsal, access to lexical memory, and output speed.

    Tehan, G; Lalor, D M

    2000-11-01

    Rehearsal speed has traditionally been seen to be the prime determinant of individual differences in memory span. Recent studies, in the main using young children as the subject population, have suggested other contributors to span performance, notably contributions from long-term memory and forgetting and retrieval processes occurring during recall. In the current research we explore individual differences in span with respect to measures of rehearsal, output time, and access to lexical memory. We replicate standard short-term phenomena; we show that the variables that influence children's span performance influence adult performance in the same way; and we show that lexical memory access appears to be a more potent source of individual differences in span than either rehearsal speed or output factors.

  20. Paging memory from random access memory to backing storage in a parallel computer

    Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

    2013-05-21

    Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

  1. Microsoft DirectAccess best practices and troubleshooting

    Krause, Jordan

    2013-01-01

    This book covers best practices and acts as a complete guide to DirectAccess and automatic remote access.Microsoft DirectAccess Best Practices and Troubleshooting is an ideal guide for any existing or future DirectAccess administrator and system administrators who are working on Windows Server 2012. This book will also be beneficial for someone with a basic knowledge of networking and deployment of Microsoft operating systems and software who wants to learn the intricacies of DirectAccess and its interfaces.

  2. Artificial intelligence applications of fast optical memory access

    Henshaw, P. D.; Todtenkopf, A. B.

    The operating principles and performance of rapid laser beam-steering (LBS) techniques are reviewed and illustrated with diagrams; their applicability to fast optical-memory (disk) access is evaluated; and the implications of fast access for the design of expert systems are discussed. LBS methods examined include analog deflection (source motion, wavefront tilt, and phased arrays), digital deflection (polarization modulation, reflectivity modulation, interferometric switching, and waveguide deflection), and photorefractive LBS. The disk-access problem is considered, and typical LBS requirements are listed as 38,000 beam positions, rotational latency 25 ms, one-sector rotation time 1.5 ms, and intersector space 87 microsec. The value of rapid access for increasing the power of expert systems (by permitting better organization of blocks of information) is illustrated by summarizing the learning process of the MVP-FORTH system (Park, 1983).

  3. SEU ground and flight data in static random access memories

    Liu, J.; Duan, J.L.; Hou, M.D.; Sun, Y.M.; Yao, H.J.; Mo, D.; Zhang, Q.X.; Wang, Z.G.; Jin, Y.F.; Cai, J.R.; Ye, Z.H.; Han, J.W.; Lin, Y.L.; Huang, Z.

    2006-01-01

    This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed on SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based on the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data

  4. Direct and generative retrieval of autobiographical memories: The roles of visual imagery and executive processes.

    Anderson, Rachel J; Dewhurst, Stephen A; Dean, Graham M

    2017-03-01

    Two experiments used a dual task methodology to investigate the role of visual imagery and executive resources in the retrieval of specific autobiographical memories. In Experiment 1, dynamic visual noise led to a reduction in the number of specific memories retrieved in response to both high and low imageability cues, but did not affect retrieval times. In Experiment 2, irrelevant pictures reduced the number of specific memories but only in response to low imageability cues. Irrelevant pictures also increased response times to both high and low imageability cues. The findings are in line with previous work suggesting that disrupting executive resources may impair generative, but not direct, retrieval of autobiographical memories. In contrast, visual distractor tasks appear to impair access to specific autobiographical memories via both the direct and generative retrieval routes, thereby highlighting the potential role of visual imagery in both pathways. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. The Influence of Direct and Indirect Speech on Source Memory

    Anita Eerland

    2018-02-01

    Full Text Available People perceive the same situation described in direct speech (e.g., John said, “I like the food at this restaurant” as more vivid and perceptually engaging than described in indirect speech (e.g., John said that he likes the food at the restaurant. So, if direct speech enhances the perception of vividness relative to indirect speech, what are the effects of using indirect speech? In four experiments, we examined whether the use of direct and indirect speech influences the comprehender’s memory for the identity of the speaker. Participants read a direct or an indirect speech version of a story and then addressed statements to one of the four protagonists of the story in a memory task. We found better source memory at the level of protagonist gender after indirect than direct speech (Exp. 1–3. When the story was rewritten to make the protagonists more distinctive, we also found an effect of speech type on source memory at the level of the individual, with better memory after indirect than direct speech (Exp. 3–4. Memory for the content of the story, however, was not influenced by speech type (Exp. 4. While previous research showed that direct speech may enhance memory for how something was said, we conclude that indirect speech enhances memory for who said what.

  6. Direct data access protocols benchmarking on DPM

    Furano, Fabrizio; Devresse, Adrien; Keeble, Oliver; Mancinelli, Valentina

    2015-12-01

    The Disk Pool Manager is an example of a multi-protocol, multi-VO system for data access on the Grid that went though a considerable technical evolution in the last years. Among other features, its architecture offers the opportunity of testing its different data access frontends under exactly the same conditions, including hardware and backend software. This characteristic inspired the idea of collecting monitoring information from various testbeds in order to benchmark the behaviour of the HTTP and Xrootd protocols for the use case of data analysis, batch or interactive. A source of information is the set of continuous tests that are run towards the worldwide endpoints belonging to the DPM Collaboration, which accumulated relevant statistics in its first year of activity. On top of that, the DPM releases are based on multiple levels of automated testing that include performance benchmarks of various kinds, executed regularly every day. At the same time, the recent releases of DPM can report monitoring information about any data access protocol to the same monitoring infrastructure that is used to monitor the Xrootd deployments. Our goal is to evaluate under which circumstances the HTTP-based protocols can be good enough for batch or interactive data access. In this contribution we show and discuss the results that our test systems have collected under the circumstances that include ROOT analyses using TTreeCache and stress tests on the metadata performance.

  7. Direct data access protocols benchmarking on DPM

    Furano, Fabrizio; Keeble, Oliver; Mancinelli, Valentina

    2015-01-01

    The Disk Pool Manager is an example of a multi-protocol, multi-VO system for data access on the Grid that went though a considerable technical evolution in the last years. Among other features, its architecture offers the opportunity of testing its different data access frontends under exactly the same conditions, including hardware and backend software. This characteristic inspired the idea of collecting monitoring information from various testbeds in order to benchmark the behaviour of the HTTP and Xrootd protocols for the use case of data analysis, batch or interactive. A source of information is the set of continuous tests that are run towards the worldwide endpoints belonging to the DPM Collaboration, which accumulated relevant statistics in its first year of activity. On top of that, the DPM releases are based on multiple levels of automated testing that include performance benchmarks of various kinds, executed regularly every day. At the same time, the recent releases of DPM can report monitoring infor...

  8. Direct dorsal hippocampal-prelimbic cortex connections strengthen fear memories.

    Ye, Xiaojing; Kapeller-Libermann, Dana; Travaglia, Alessio; Inda, M Carmen; Alberini, Cristina M

    2017-01-01

    The ability to regulate the consolidation and strengthening of memories for threatening experiences is critical for mental health, and its dysregulation may lead to psychopathologies. Re-exposure to the context in which the threat was experienced can either increase or decrease fear response through distinct processes known, respectively, as reconsolidation or extinction. Using a context retrieval-dependent memory-enhancement model in rats, we report that memory strengthens through activation of direct projections from dorsal hippocampus to prelimbic (PL) cortex and activation of critical PL molecular mechanisms that are not required for extinction. Furthermore, while sustained PL brain-derived neurotrophic factor (BDNF) expression is required for memory consolidation, retrieval engages PL BDNF to regulate excitatory and inhibitory synaptic proteins neuroligin 1 and neuroligin 2, which promote memory strengthening while inhibiting extinction. Thus, context retrieval-mediated fear-memory enhancement results from a concerted action of mechanisms that strengthen memory through reconsolidation while suppressing extinction.

  9. Complex dynamics of semantic memory access in reading.

    Baggio, Giosué; Fonseca, André

    2012-02-07

    Understanding a word in context relies on a cascade of perceptual and conceptual processes, starting with modality-specific input decoding, and leading to the unification of the word's meaning into a discourse model. One critical cognitive event, turning a sensory stimulus into a meaningful linguistic sign, is the access of a semantic representation from memory. Little is known about the changes that activating a word's meaning brings about in cortical dynamics. We recorded the electroencephalogram (EEG) while participants read sentences that could contain a contextually unexpected word, such as 'cold' in 'In July it is very cold outside'. We reconstructed trajectories in phase space from single-trial EEG time series, and we applied three nonlinear measures of predictability and complexity to each side of the semantic access boundary, estimated as the onset time of the N400 effect evoked by critical words. Relative to controls, unexpected words were associated with larger prediction errors preceding the onset of the N400. Accessing the meaning of such words produced a phase transition to lower entropy states, in which cortical processing becomes more predictable and more regular. Our study sheds new light on the dynamics of information flow through interfaces between sensory and memory systems during language processing.

  10. Administering an epoch initiated for remote memory access

    Blocksome, Michael A; Miller, Douglas R

    2012-10-23

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  11. Sleep directly following learning benefits consolidation of spatial associative memory

    Talamini, L.M.; Nieuwenhuis, I.L.C.; Takashima, A.

    2008-01-01

    The last decade has brought forth convincing evidence for a role of sleep in non-declarative memory. A similar function of sleep in episodic memory is supported by various correlational studies, but direct evidence is limited. Here we show that cued recall of face–location associations is

  12. Sleep directly following learning benefits consolidation of spatial associative memory

    Talamini, L.M.; Nieuwenhuis, I.L.C.; Takashima, A.; Jensen, O.

    2008-01-01

    The last decade has brought forth convincing evidence for a role of sleep in non-declarative memory. A similar function of sleep in episodic memory is supported by various correlational studies, but direct evidence is limited. Here we show that cued recall of face-location associations is

  13. Routes to the past: neural substrates of direct and generative autobiographical memory retrieval.

    Addis, Donna Rose; Knapp, Katie; Roberts, Reece P; Schacter, Daniel L

    2012-02-01

    Models of autobiographical memory propose two routes to retrieval depending on cue specificity. When available cues are specific and personally-relevant, a memory can be directly accessed. However, when available cues are generic, one must engage a generative retrieval process to produce more specific cues to successfully access a relevant memory. The current study sought to characterize the neural bases of these retrieval processes. During functional magnetic resonance imaging (fMRI), participants were shown personally-relevant cues to elicit direct retrieval, or generic cues (nouns) to elicit generative retrieval. We used spatiotemporal partial least squares to characterize the spatial and temporal characteristics of the networks associated with direct and generative retrieval. Both retrieval tasks engaged regions comprising the autobiographical retrieval network, including hippocampus, and medial prefrontal and parietal cortices. However, some key neural differences emerged. Generative retrieval differentially recruited lateral prefrontal and temporal regions early on during the retrieval process, likely supporting the strategic search operations and initial recovery of generic autobiographical information. However, many regions were activated more strongly during direct versus generative retrieval, even when we time-locked the analysis to the successful recovery of events in both conditions. This result suggests that there may be fundamental differences between memories that are accessed directly and those that are recovered via the iterative search and retrieval process that characterizes generative retrieval. Copyright © 2011 Elsevier Inc. All rights reserved.

  14. Large Capacity of Conscious Access for Incidental Memories in Natural Scenes.

    Kaunitz, Lisandro N; Rowe, Elise G; Tsuchiya, Naotsugu

    2016-09-01

    When searching a crowd, people can detect a target face only by direct fixation and attention. Once the target is found, it is consciously experienced and remembered, but what is the perceptual fate of the fixated nontarget faces? Whereas introspection suggests that one may remember nontargets, previous studies have proposed that almost no memory should be retained. Using a gaze-contingent paradigm, we asked subjects to visually search for a target face within a crowded natural scene and then tested their memory for nontarget faces, as well as their confidence in those memories. Subjects remembered up to seven fixated, nontarget faces with more than 70% accuracy. Memory accuracy was correlated with trial-by-trial confidence ratings, which implies that the memory was consciously maintained and accessed. When the search scene was inverted, no more than three nontarget faces were remembered. These findings imply that incidental memory for faces, such as those recalled by eyewitnesses, is more reliable than is usually assumed. © The Author(s) 2016.

  15. The dynamics of access to groups in working memory.

    Farrell, Simon; Lelièvre, Anna

    2012-11-01

    The finding that participants leave a pause between groups when attempting serial recall of temporally grouped lists has been taken to indicate access to a hierarchical representation of the list in working memory. An alternative explanation is that the dynamics of serial recall solely reflect output (rather than memorial) processes, with the temporal pattern at input merely suggesting a basis for the pattern of output buffering. Three experiments are presented here that disentangle input structure from output buffering in serial recall. In Experiment 1, participants were asked to recall a subset of visually presented digits from a temporally grouped list in their original order, where either within-group position or group position was kept constant. In Experiment 2, participants performed more standard serial recall of spoken digits, and input and output position were dissociated by asking participants to initiate recall from a post-cued position in the list. In Experiment 3, participants were asked to serially recall temporally grouped lists of visually presented digits where the grouping structure was unpredictable, under either articulatory suppression or silent conditions. The 3 experiments point to a tight linkage between implied memorial structures (i.e., the pattern of grouping at encoding) and the output structure implied by retrieval times and call into question a purely motoric account of the dynamics of recall.

  16. Sleep directly following learning benefits consolidation of spatial associative memory.

    Talamini, Lucia M; Nieuwenhuis, Ingrid L C; Takashima, Atsuko; Jensen, Ole

    2008-04-01

    The last decade has brought forth convincing evidence for a role of sleep in non-declarative memory. A similar function of sleep in episodic memory is supported by various correlational studies, but direct evidence is limited. Here we show that cued recall of face-location associations is significantly higher following a 12-h retention interval containing sleep than following an equally long period of waking. Furthermore, retention is significantly higher over a 24-h sleep-wake interval than over an equally long wake-sleep interval. This difference occurs because retention during sleep was significantly better when sleep followed learning directly, rather than after a day of waking. These data demonstrate a beneficial effect of sleep on memory that cannot be explained solely as a consequence of reduced interference. Rather, our findings suggest a competitive consolidation process, in which the fate of a memory depends, at least in part, on its relative stability at sleep onset: Strong memories tend to be preserved, while weaker memories erode still further. An important aspect of memory consolidation may thus result from the removal of irrelevant memory "debris."

  17. Enabling Highly-Scalable Remote Memory Access Programming with MPI-3 One Sided

    Robert Gerstenberger

    2014-01-01

    Full Text Available Modern interconnects offer remote direct memory access (RDMA features. Yet, most applications rely on explicit message passing for communications albeit their unwanted overheads. The MPI-3.0 standard defines a programming interface for exploiting RDMA networks directly, however, it's scalability and practicability has to be demonstrated in practice. In this work, we develop scalable bufferless protocols that implement the MPI-3.0 specification. Our protocols support scaling to millions of cores with negligible memory consumption while providing highest performance and minimal overheads. To arm programmers, we provide a spectrum of performance models for all critical functions and demonstrate the usability of our library and models with several application studies with up to half a million processes. We show that our design is comparable to, or better than UPC and Fortran Coarrays in terms of latency, bandwidth and message rate. We also demonstrate application performance improvements with comparable programming complexity.

  18. Evaluation of External Memory Access Performance on a High-End FPGA Hybrid Computer

    Konstantinos Kalaitzis

    2016-10-01

    Full Text Available The motivation of this research was to evaluate the main memory performance of a hybrid super computer such as the Convey HC-x, and ascertain how the controller performs in several access scenarios, vis-à-vis hand-coded memory prefetches. Such memory patterns are very useful in stencil computations. The theoretical bandwidth of the memory of the Convey is compared with the results of our measurements. The accurate study of the memory subsystem is particularly useful for users when they are developing their application-specific personality. Experiments were performed to measure the bandwidth between the coprocessor and the memory subsystem. The experiments aimed mainly at measuring the reading access speed of the memory from Application Engines (FPGAs. Different ways of accessing data were used in order to find the most efficient way to access memory. This way was proposed for future work in the Convey HC-x. When performing a series of accesses to memory, non-uniform latencies occur. The Memory Controller of the Convey HC-x in the coprocessor attempts to cover this latency. We measure memory efficiency as a ratio of the number of memory accesses and the number of execution cycles. The result of this measurement converges to one in most cases. In addition, we performed experiments with hand-coded memory accesses. The analysis of the experimental results shows how the memory subsystem and Memory Controllers work. From this work we conclude that the memory controllers do an excellent job, largely because (transparently to the user they seem to cache large amounts of data, and hence hand-coding is not needed in most situations.

  19. Taxing working memory during retrieval of emotional memories does not reduce memory accessibility when cued with reminders

    Kevin eVan Schie

    2015-02-01

    Full Text Available Earlier studies have shown that when individuals recall an emotional memory while simultaneously doing a demanding dual-task (e.g., playing Tetris, mental arithmetic, making eye movements, this reduces self-reported vividness and emotionality of the memory. These effects have been found up to one week later, but have largely been confined to self-report ratings. This study examined whether this dual-tasking intervention reduces memory performance (i.e., accessibility of emotional memories. Undergraduates (N = 60 studied word-image pairs and rated the retrieved image on vividness and emotionality when cued with the word. Then they viewed the cues and recalled the images with or without making eye movements. Finally, they re-rated the images on vividness and emotionality. Additionally, fragments from images from all conditions were presented and participants identified which fragment was paired earlier with which cue. Findings showed no effect of the dual-task manipulation on self-reported ratings and latency responses. Cued recall may not have been sufficient to elicit specific and continuous target retrieval for memory blurring to occur. The study demonstrates boundaries to the effects of the dual-tasking procedure.

  20. Design of ternary clocked adiabatic static random access memory

    Wang Pengjun; Mei Fengna

    2011-01-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions. (semiconductor integrated circuits)

  1. Materials selection for oxide-based resistive random access memories

    Guo, Yuzheng; Robertson, John

    2014-01-01

    The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO 2 , TiO 2 , Ta 2 O 5 , and Al 2 O 3 , to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta 2 O 5 RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy

  2. Materials selection for oxide-based resistive random access memories

    Guo, Yuzheng; Robertson, John [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

    2014-12-01

    The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO{sub 2}, TiO{sub 2}, Ta{sub 2}O{sub 5}, and Al{sub 2}O{sub 3}, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta{sub 2}O{sub 5} RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.

  3. Design of ternary clocked adiabatic static random access memory

    Pengjun, Wang; Fengna, Mei

    2011-10-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions.

  4. Neutron detection using soft errors in dynamic random access memories

    Darambara, D.G.; Spyrou, N.M.

    1992-01-01

    The fact that energetic alpha particles have been observed to be capable of inducing single-event upsets in integrated circuit memories has become a topic of considerable interest in the past few years. One recognized difficulty with dynamic random access memory devices (dRAMs) is that the alpha-particle 'contamination' present within the dRAM encapsulating material interact sufficiently as to corrupt stored data. The authors essentially utilized the fact that these corruptions may be induced in dRAMs by the interaction of charged particles with the chip of the dRAM itself as a basis of a hardware system for neutron detection with a view to applications in neutron imaging and elemental analysis. The design incorporates a bank of dRAMs on which the particles are incident. Initially, these particles were alpha particles from an appropriate alpha-emitting source employed to assess system parameters. The sensitivity of the device to logic state upsets by ionizing radiation is a function of design and technology parameters, inducing storage node area, node capacitance, operating voltage, minority carrier lifetime, electric fields pattern in the bulk silicon, and specific device geometry. The soft error rate of the device in a given package depends on the flux of alphas, the energy spectrum, the distribution of incident angles, the target area, the total stored charge, the collection efficiency, the cell geometry, the supply voltage, the cycle and refreshing time, and the noise margin

  5. Directions for memory hierarchies and their components: research and development

    Smith, A.J.

    1978-10-01

    The memory hierarchy is usually the largest identifiable part of a computer system and making effective use of it is critical to the operation and use of the system. The levels of such a memory hierarchy are considered and the state of the art and likely directions for both research and development are described. Algorithmic and logical features of the hierarchy not directly associated with specific components are also discussed. Among the problems believed to be the most significant are the following: (a) evaluate the effectiveness of gap filler technology as a level of storage between main memory and disk, and if it proves to be effective, determine how/where it should be used, (b) develop algorithms for the use of mass storage in a large computer system, and (c) determine how cache memories should be implemented in very large, fast multiprocessor systems

  6. Transcranial Direct Current Stimulation Improves Audioverbal Memory in Stroke Patients.

    Kazuta, Toshinari; Takeda, Kotaro; Osu, Rieko; Tanaka, Satoshi; Oishi, Ayako; Kondo, Kunitsugu; Liu, Meigen

    2017-08-01

    The aim of this study was to investigate whether anodal transcranial direct current stimulation over the left temporoparietal area improved audioverbal memory performance in stroke patients. Twelve stroke patients with audioverbal memory impairment participated in a single-masked, crossover, and sham-controlled experiment. The anodal or sham transcranial direct current stimulation was applied during the Rey Auditory Verbal Learning Test, which evaluates the ability to recall a list of 15 heard words over five trials. The number of correctly recalled words was compared between the anodal and sham conditions and the influence of transcranial direct current stimulation on serial position effect of the 15 words was also examined. The increase in the number of correctly recalled words from the first to the fifth trial was significantly greater in the anodal condition than in the sham condition (P transcranial direct current stimulation over the left temporoparietal area improved audioverbal memory performance and induced the primacy effect in stroke patients.

  7. Hardware support for collecting performance counters directly to memory

    Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

    2012-09-25

    Hardware support for collecting performance counters directly to memory, in one aspect, may include a plurality of performance counters operable to collect one or more counts of one or more selected activities. A first storage element may be operable to store an address of a memory location. A second storage element may be operable to store a value indicating whether the hardware should begin copying. A state machine may be operable to detect the value in the second storage element and trigger hardware copying of data in selected one or more of the plurality of performance counters to the memory location whose address is stored in the first storage element.

  8. Just one look: Direct gaze briefly disrupts visual working memory.

    Wang, J Jessica; Apperly, Ian A

    2017-04-01

    Direct gaze is a salient social cue that affords rapid detection. A body of research suggests that direct gaze enhances performance on memory tasks (e.g., Hood, Macrae, Cole-Davies, & Dias, Developmental Science, 1, 67-71, 2003). Nonetheless, other studies highlight the disruptive effect direct gaze has on concurrent cognitive processes (e.g., Conty, Gimmig, Belletier, George, & Huguet, Cognition, 115(1), 133-139, 2010). This discrepancy raises questions about the effects direct gaze may have on concurrent memory tasks. We addressed this topic by employing a change detection paradigm, where participants retained information about the color of small sets of agents. Experiment 1 revealed that, despite the irrelevance of the agents' eye gaze to the memory task at hand, participants were worse at detecting changes when the agents looked directly at them compared to when the agents looked away. Experiment 2 showed that the disruptive effect was relatively short-lived. Prolonged presentation of direct gaze led to recovery from the initial disruption, rather than a sustained disruption on change detection performance. The present study provides the first evidence that direct gaze impairs visual working memory with a rapidly-developing yet short-lived effect even when there is no need to attend to agents' gaze.

  9. Memory-n strategies of direct reciprocity.

    Hilbe, Christian; Martinez-Vaquero, Luis A; Chatterjee, Krishnendu; Nowak, Martin A

    2017-05-02

    Humans routinely use conditionally cooperative strategies when interacting in repeated social dilemmas. They are more likely to cooperate if others cooperated before, and are ready to retaliate if others defected. To capture the emergence of reciprocity, most previous models consider subjects who can only choose from a restricted set of representative strategies, or who react to the outcome of the very last round only. As players memorize more rounds, the dimension of the strategy space increases exponentially. This increasing computational complexity renders simulations for individuals with higher cognitive abilities infeasible, especially if multiplayer interactions are taken into account. Here, we take an axiomatic approach instead. We propose several properties that a robust cooperative strategy for a repeated multiplayer dilemma should have. These properties naturally lead to a unique class of cooperative strategies, which contains the classical Win-Stay Lose-Shift rule as a special case. A comprehensive numerical analysis for the prisoner's dilemma and for the public goods game suggests that strategies of this class readily evolve across various memory- n spaces. Our results reveal that successful strategies depend not only on how cooperative others were in the past but also on the respective context of cooperation.

  10. Information matching the content of visual working memory is prioritized for conscious access.

    Gayet, Surya; Paffen, Chris L E; Van der Stigchel, Stefan

    2013-12-01

    Visual working memory (VWM) is used to retain relevant information for imminent goal-directed behavior. In the experiments reported here, we found that VWM helps to prioritize relevant information that is not yet available for conscious experience. In five experiments, we demonstrated that information matching VWM content reaches visual awareness faster than does information not matching VWM content. Our findings suggest a functional link between VWM and visual awareness: The content of VWM is recruited to funnel down the vast amount of sensory input to that which is relevant for subsequent behavior and therefore requires conscious access.

  11. Radiation Dosimetry Using Three-Dimensional Optical Random Access Memories

    Moscovitch, M.

    2001-01-01

    The ability to determine particle type and energy plays an important role in the dosimetry of heavy charged particles (HCP) and neutrons. A new approach to radiation dosimetry is presented, which is shown to be capable of particle type and energy discrimination. This method is based on utilizing radiation induced changes in the digital information stored on three-dimensional optical random access memories (3D ORAM). 3D ORAM is a small cube (a few mm 3 ) composed of poly(methyl methacrylate) doped with a photochromic dye, and it was originally proposed as a memory device in high speed parallel computers. A Nd:YAG laser system is used to write and read binary information (bits) on the ORAM, which functions as a charged particle detector. Both the read and the write processes use two laser beams that simultaneously strike the material to cause a color change at their intersection (similar to the darkening of light-sensitive sunglasses when exposed to sunlight.) The laser produces color changes in the ORAM, which then reverts to the original color (''bit-flips'') at sites where energy is deposited from interaction with incident HCP or neutron-recoil protons. The feasibility of this approach was demonstrated both theoretically and experimentally. Calculations based on track structure theory (TST) predict that when HCP interact with the ORAM material, the local energy deposition is capable of inducing measurable ''bit-flips''. These predictions were recently confirmed experimentally using two types of ORAM systems, one based on spirobenzopyran and the other on anthracene, as the photochromic dyes

  12. Radiation dosimetry using three-dimensional optical random access memories

    Moscovitch, M.; Phillips, G.W.; Cullum, B.M.; Mobley, J.; Bogard, J.S.; Emfietzoglou, D.; Vo-Dinh, T.

    2002-01-01

    The ability to determine particle type and energy plays an important role in the dosimetry of heavy charged particles (HCP) and neutrons. A new approach to radiation dosimetry is presented, which is shown to be capable of particle type and energy discrimination. This method is based on utilising radiation induced changes in the digital information stored on three-dimensional optical random access memories (3D ORAM). 3D ORAM is a small cube (a few mm 3 ) composed of poly(methyl methacrylate) doped with a photochromic dye, and it was originally proposed as a memory device in high speed parallel computers. A Nd:YAG laser system is used to write and read binary information (bits) on the ORAM, which functions as a charged particle detector. Both the read and the write processes use two laser beams that simultaneously strike the material to cause a colour change at their intersection (similar to the darkening of light-sensitive sunglasses when exposed to sunlight). The laser produces colour changes in the ORAM, which then reverts to the original colour ('bit-flips') at sites where energy is deposited from interaction with incident HCP or neutron-recoil protons. The feasibility of this approach was demonstrated both theoretically and experimentally. Calculations based on track structure theory predict that when HCP interact with the ORAM material, the local energy deposition is capable of inducing measurable 'bit-flips'. These predictions were recently confirmed experimentally using two types of ORAM systems, one based on spirobenzopyran and the other on anthracene, as the photochromic dyes. (author)

  13. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems.

    Shehzad, Danish; Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models.

  14. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems

    Danish Shehzad

    2016-01-01

    Full Text Available Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models.

  15. The accessibility of memory items in children’s working memory

    Roome, Hannah; Towse, John

    2016-01-01

    This thesis investigates the processes and systems that support recall in working memory. In particular it seeks to apply ideas from the adult-based dual-memory framework (Unsworth & Engle, 2007b) that claims primary memory and secondary memory are independent contributors to working memory capacity. These two memory systems are described as domain-general processes that combine control of attention and basic memory abilities to retain information. The empirical contribution comprises five ex...

  16. Memory architecture for efficient utilization of SDRAM: a case study of the computation/memory access trade-off

    Gleerup, Thomas Møller; Holten-Lund, Hans Erik; Madsen, Jan

    2000-01-01

    . In software, forward differencing is usually better, but in this hardware implementation, the trade-off has made it possible to develop a very regular memory architecture with a buffering system, which can reach 95% bandwidth utilization using off-the-shelf SDRAM, This is achieved by changing the algorithm......This paper discusses the trade-off between calculations and memory accesses in a 3D graphics tile renderer for visualization of data from medical scanners. The performance requirement of this application is a frame rate of 25 frames per second when rendering 3D models with 2 million triangles, i...... to use a memory access strategy with write-only and read-only phases, and a buffering system, which uses round-robin bank write-access combined with burst read-access....

  17. Remote Memory Access Protocol Target Node Intellectual Property

    Haddad, Omar

    2013-01-01

    The MagnetoSpheric Multiscale (MMS) mission had a requirement to use the Remote Memory Access Protocol (RMAP) over its SpaceWire network. At the time, no known intellectual property (IP) cores were available for purchase. Additionally, MMS preferred to implement the RMAP functionality with control over the low-level details of the design. For example, not all the RMAP standard functionality was needed, and it was desired to implement only the portions of the RMAP protocol that were needed. RMAP functionality had been previously implemented in commercial off-the-shelf (COTS) products, but the IP core was not available for purchase. The RMAP Target IP core is a VHDL (VHSIC Hardware Description Language description of a digital logic design suitable for implementation in an FPGA (field-programmable gate array) or ASIC (application-specific integrated circuit) that parses SpaceWire packets that conform to the RMAP standard. The RMAP packet protocol allows a network host to access and control a target device using address mapping. This capability allows SpaceWire devices to be managed in a standardized way that simplifies the hardware design of the device, as well as the development of the software that controls the device. The RMAP Target IP core has some features that are unique and not specified in the RMAP standard. One such feature is the ability to automatically abort transactions if the back-end logic does not respond to read/write requests within a predefined time. When a request times out, the RMAP Target IP core automatically retracts the request and returns a command response with an appropriate status in the response packet s header. Another such feature is the ability to control the SpaceWire node or router using RMAP transactions in the extended address range. This allows the SpaceWire network host to manage the SpaceWire network elements using RMAP packets, which reduces the number of protocols that the network host needs to support.

  18. Main Memory

    Boncz, Peter; Liu, Lei; Özsu, M.

    2008-01-01

    htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random Access Memory (RAM), to indicate that load/store instructions can access data at any location at the same cost, is usually implemented using DRAM chips, which are connected to the CPU and other per...

  19. Visual inspection requirements for high-reliability random-access memories

    Andrade, A.; McHenery, J.

    1981-09-01

    Visual inspection requirements are given for random-access memories for deep-space satellite electronics. The requirements, based primarily on Military Standard 883B, are illustrated in the order of their manufacturing operation to clarify and facilitate inspection procedures

  20. Czechoslovakia's participation in IAEA's INIS/AGRIS direct access experiment

    Stanik, Z.

    1980-01-01

    The task of establishing direct access to the INIS data base is being implemented in Czechoslovakia by the Nuclear Information Centre in Prague-Zbraslav. The aim and meaning of the experiment is to build a Czechoslovak network of terminals linked to the IAEA with the possibility of future connections to other data bases. The first stage is characterized by the use of a dial-up line. (M.S.)

  1. Cerebellar transcranial direct current stimulation modulates verbal working memory.

    Boehringer, Andreas; Macher, Katja; Dukart, Juergen; Villringer, Arno; Pleger, Burkhard

    2013-07-01

    Neuroimaging studies show cerebellar activations in a wide range of cognitive tasks and patients with cerebellar lesions often present cognitive deficits suggesting a cerebellar role in higher-order cognition. We used cathodal transcranial direct current stimulation (tDCS), known to inhibit neuronal excitability, over the cerebellum to investigate if cathodal tDCS impairs verbal working memory, an important higher-order cognitive faculty. We tested verbal working memory as measured by forward and backward digit spans in 40 healthy young participants before and after applying cathodal tDCS (2 mA, stimulation duration 25 min) to the right cerebellum using a randomized, sham-controlled, double-blind, cross-over design. In addition, we tested the effect of cerebellar tDCS on word reading, finger tapping and a visually cued sensorimotor task. In line with lower digit spans in patients with cerebellar lesions, cerebellar tDCS reduced forward digit spans and blocked the practice dependent increase in backward digit spans. No effects of tDCS on word reading, finger tapping or the visually cued sensorimotor task were found. Our results support the view that the cerebellum contributes to verbal working memory as measured by forward and backward digit spans. Moreover, the induction of reversible "virtual cerebellar lesions" in healthy individuals by means of tDCS may improve our understanding of the mechanistic basis of verbal working memory deficits in patients with cerebellar lesions. Copyright © 2013 Elsevier Inc. All rights reserved.

  2. High density submicron magnetoresistive random access memory (invited)

    Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

    1999-04-01

    Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

  3. Are there multiple ways to direct attention in working memory?

    Atkinson, Amy L; Berry, Ed D J; Waterman, Amanda H; Baddeley, Alan D; Hitch, Graham J; Allen, Richard J

    2018-04-10

    In visual working memory tasks, memory for an item is enhanced if participants are told that the item is relatively more valuable than others presented within the same trial. Experiment 1 explored whether these probe value boosts (termed prioritization effects in previous literature) are affected by probe frequency (i.e., how often the more valuable item is tested). Participants were presented with four colored shapes sequentially and asked to recall the color of one probed item following a delay. They were informed that the first item was more valuable (differential probe value) or as valuable as the other items (equal probe value), and that this item would be tested more frequently (differential probe frequency) or as frequently (equal probe frequency) as the other items. Probe value and probe frequency boosts were observed at the first position, though both were accompanied by costs to other items. Probe value and probe frequency boosts were additive, suggesting the manipulations yield independent effects. Further supporting this, experiment 2 revealed that probe frequency boosts are not reliant on executive resources, directly contrasting with previous findings regarding probe value. Taken together, these outcomes suggest there may be several ways in which attention can be directed in working memory. © 2018 The Authors. Annals of the New York Academy of Sciences published by Wiley Periodicals, Inc. on behalf of New York Academy of Sciences.

  4. False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

    Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

    2013-04-01

    Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

  5. Role of an encapsulating layer for reducing resistance drift in phase change random access memory

    Bo Jin

    2014-12-01

    Full Text Available Phase change random access memory (PCRAM devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM and the encapsulating layer material (YELM according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.

  6. Accessing Information in Working Memory: Can the Focus of Attention Grasp Two Elements at the Same Time?

    Oberauer, Klaus; Bialkova, Svetlana

    2009-01-01

    Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a spatial task investigate time demands for successive…

  7. 75 FR 44283 - In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same...

    2010-07-28

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-707] In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of a... importation of certain dynamic random access memory semiconductors and products containing same, including...

  8. Accessing information in working memory: Can the focus of attention grasp two elements at the same time?

    Oberauer, K.; Bialkova, S.E.

    2009-01-01

    Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a

  9. A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

    Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2018-04-01

    A novel ternary content addressable memory (TCAM) design based on resistive random access memory (RRAM) is presented. Each TCAM cell consists of two parallel RRAM to both store and search for ternary data. The cell size of the proposed design is 8F2, enable a ∼60× cell area reduction compared with the conventional static random access memory (SRAM) based implementation. Simulation results also show that the search delay and energy consumption of the proposed design at the 64-bit word search are 2 ps and 0.18 fJ/bit/search respectively at 22 nm technology node, where significant improvements are achieved compared to previous works. The desired characteristics of RRAM for implementation of the high performance TCAM search chip are also discussed.

  10. The Benefits of Targeted Memory Reactivation for Consolidation in Sleep are Contingent on Memory Accuracy and Direct Cue-Memory Associations.

    Cairney, Scott A; Lindsay, Shane; Sobczak, Justyna M; Paller, Ken A; Gaskell, M Gareth

    2016-05-01

    To investigate how the effects of targeted memory reactivation (TMR) are influenced by memory accuracy prior to sleep and the presence or absence of direct cue-memory associations. 30 participants associated each of 50 pictures with an unrelated word and then with a screen location in two separate tasks. During picture-location training, each picture was also presented with a semantically related sound. The sounds were therefore directly associated with the picture locations but indirectly associated with the words. During a subsequent nap, half of the sounds were replayed in slow wave sleep (SWS). The effect of TMR on memory for the picture locations (direct cue-memory associations) and picture-word pairs (indirect cue-memory associations) was then examined. TMR reduced overall memory decay for recall of picture locations. Further analyses revealed a benefit of TMR for picture locations recalled with a low degree of accuracy prior to sleep, but not those recalled with a high degree of accuracy. The benefit of TMR for low accuracy memories was predicted by time spent in SWS. There was no benefit of TMR for memory of the picture-word pairs, irrespective of memory accuracy prior to sleep. TMR provides the greatest benefit to memories recalled with a low degree of accuracy prior to sleep. The memory benefits of TMR may also be contingent on direct cue-memory associations. © 2016 Associated Professional Sleep Societies, LLC.

  11. Asymmetrical access to color and location in visual working memory.

    Rajsic, Jason; Wilson, Daryl E

    2014-10-01

    Models of visual working memory (VWM) have benefitted greatly from the use of the delayed-matching paradigm. However, in this task, the ability to recall a probed feature is confounded with the ability to maintain the proper binding between the feature that is to be reported and the feature (typically location) that is used to cue a particular item for report. Given that location is typically used as a cue-feature, we used the delayed-estimation paradigm to compare memory for location to memory for color, rotating which feature was used as a cue and which was reported. Our results revealed several novel findings: 1) the likelihood of reporting a probed object's feature was superior when reporting location with a color cue than when reporting color with a location cue; 2) location report errors were composed entirely of swap errors, with little to no random location reports; and 3) both colour and location reports greatly benefitted from the presence of nonprobed items at test. This last finding suggests that it is uncertainty over the bindings between locations and colors at memory retrieval that drive swap errors, not at encoding. We interpret our findings as consistent with a representational architecture that nests remembered object features within remembered locations.

  12. What versus where: Investigating how autobiographical memory retrieval differs when accessed with thematic versus spatial information.

    Sheldon, Signy; Chu, Sonja

    2017-09-01

    Autobiographical memory research has investigated how cueing distinct aspects of a past event can trigger different recollective experiences. This research has stimulated theories about how autobiographical knowledge is accessed and organized. Here, we test the idea that thematic information organizes multiple autobiographical events whereas spatial information organizes individual past episodes by investigating how retrieval guided by these two forms of information differs. We used a novel autobiographical fluency task in which participants accessed multiple memory exemplars to event theme and spatial (location) cues followed by a narrative description task in which they described the memories generated to these cues. Participants recalled significantly more memory exemplars to event theme than to spatial cues; however, spatial cues prompted faster access to past memories. Results from the narrative description task revealed that memories retrieved via event theme cues compared to spatial cues had a higher number of overall details, but those recalled to the spatial cues were recollected with a greater concentration on episodic details than those retrieved via event theme cues. These results provide evidence that thematic information organizes and integrates multiple memories whereas spatial information prompts the retrieval of specific episodic content from a past event.

  13. One bipolar transistor selector - One resistive random access memory device for cross bar memory array

    Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

    2017-09-01

    A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

  14. A Strategic Analysis in Dynamic Random Access Memory Industry in Taiwan

    Chen, Yen-Chun

    2009-01-01

    The credit crisis and global economic recession have severely impacted on Integrated Circuit (IC) industry particularly in Dynamic Random Access Memory (DRAM) industry. The average selling price declined below the cost of chip and almost all memory producers are lack of cash flow. One of the global three 3 producers has been driven out of this industry and all Taiwanese DRAM vendors are facing to a dilemma on how they can survive through the economic recession and oversupply circumstance. Thi...

  15. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-01-01

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

  16. Optical interconnection network for parallel access to multi-rank memory in future computing systems.

    Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

    2015-08-10

    With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent.

  17. MAP Detector for Flash Memory Without Accessing the Interfering Cells

    Yassine, Hachem; Badiu, Mihai Alin; Coon, Justin P.

    2018-01-01

    the latency cost of accessing the interfering cells. Specifically, we exploit the fact that adjacent cells have common interferers by modeling the system as an appropriate hidden Markov model. Then we use the sum-product (message-passing) algorithm to compute the marginal posterior probabilities of the stored...

  18. Memory accessibility shapes explanation: Testing key claims of the inherence heuristic account.

    Hussak, Larisa J; Cimpian, Andrei

    2018-01-01

    People understand the world by constructing explanations for what they observe. It is thus important to identify the cognitive processes underlying these judgments. According to a recent proposal, everyday explanations are often constructed heuristically: Because people need to generate explanations on a moment-by-moment basis, they cannot perform an exhaustive search through the space of possible reasons, but may instead use the information that is most easily accessible in memory (Cimpian & Salomon 2014a, b). In the present research, we tested two key claims of this proposal that have so far not been investigated. First, we tested whether-as previously hypothesized-the information about an entity that is most accessible in memory tends to consist of inherent or intrinsic facts about that entity, rather than extrinsic (contextual, historical, etc.) facts about it (Studies 1 and 2). Second, we tested the implications of this difference in the memory accessibility of inherent versus extrinsic facts for the process of generating explanations: Does the fact that inherent facts are more accessible than relevant extrinsic facts give rise to an inherence bias in the content of the explanations generated (Studies 3 and 4)? The findings supported the proposal that everyday explanations are generated in part via a heuristic process that relies on easily accessible-and often inherent-information from memory.

  19. The short- and long-term consequences of directed forgetting in a working memory task.

    Festini, Sara B; Reuter-Lorenz, Patricia A

    2013-01-01

    Directed forgetting requires the voluntary control of memory. Whereas many studies have examined directed forgetting in long-term memory (LTM), the mechanisms and effects of directed forgetting within working memory (WM) are less well understood. The current study tests how directed forgetting instructions delivered in a WM task influence veridical memory, as well as false memory, over the short and long term. In a modified item recognition task Experiment 1 tested WM only and demonstrated that directed forgetting reduces false recognition errors and semantic interference. Experiment 2 replicated these WM effects and used a surprise LTM recognition test to assess the long-term effects of directed forgetting in WM. Long-term veridical memory for to-be-remembered lists was better than memory for to-be-forgotten lists-the directed forgetting effect. Moreover, fewer false memories emerged for to-be-forgotten information than for to-be-remembered information in LTM as well. These results indicate that directed forgetting during WM reduces semantic processing of to-be-forgotten lists over the short and long term. Implications for theories of false memory and the mechanisms of directed forgetting within working memory are discussed.

  20. Taxing Working Memory during Retrieval of Emotional Memories Does Not Reduce Memory Accessibility When Cued with Reminders

    van Schie, Kevin; Engelhard, Iris M; van den Hout, Marcel A

    2015-01-01

    Earlier studies have shown that when individuals recall an emotional memory while simultaneously doing a demanding dual-task [e.g., playing Tetris, mental arithmetic, making eye movements (EM)], this reduces self-reported vividness and emotionality of the memory. These effects have been found up to

  1. Chromatin accessibility prediction via convolutional long short-term memory networks with k-mer embedding.

    Min, Xu; Zeng, Wanwen; Chen, Ning; Chen, Ting; Jiang, Rui

    2017-07-15

    Experimental techniques for measuring chromatin accessibility are expensive and time consuming, appealing for the development of computational approaches to predict open chromatin regions from DNA sequences. Along this direction, existing methods fall into two classes: one based on handcrafted k -mer features and the other based on convolutional neural networks. Although both categories have shown good performance in specific applications thus far, there still lacks a comprehensive framework to integrate useful k -mer co-occurrence information with recent advances in deep learning. We fill this gap by addressing the problem of chromatin accessibility prediction with a convolutional Long Short-Term Memory (LSTM) network with k -mer embedding. We first split DNA sequences into k -mers and pre-train k -mer embedding vectors based on the co-occurrence matrix of k -mers by using an unsupervised representation learning approach. We then construct a supervised deep learning architecture comprised of an embedding layer, three convolutional layers and a Bidirectional LSTM (BLSTM) layer for feature learning and classification. We demonstrate that our method gains high-quality fixed-length features from variable-length sequences and consistently outperforms baseline methods. We show that k -mer embedding can effectively enhance model performance by exploring different embedding strategies. We also prove the efficacy of both the convolution and the BLSTM layers by comparing two variations of the network architecture. We confirm the robustness of our model to hyper-parameters by performing sensitivity analysis. We hope our method can eventually reinforce our understanding of employing deep learning in genomic studies and shed light on research regarding mechanisms of chromatin accessibility. The source code can be downloaded from https://github.com/minxueric/ismb2017_lstm . tingchen@tsinghua.edu.cn or ruijiang@tsinghua.edu.cn. Supplementary materials are available at

  2. Does retrieval intentionality really matter? Similarities and differences between involuntary memories and directly and generatively retrieved voluntary memories

    Barzykowski, Krystian; Staugaard, Søren Risløv

    2016-01-01

    differences between the characteristics of involuntary and directly retrieved memories. The results imply that retrieval intention seems to differentiate how a memory appears in a person’s mind. Furthermore, we argue that these differences in part could result from differences in encoding and consolidation.......Theories of autobiographical memory distinguish between involuntary and voluntary retrieval as a consequence of conscious intention (i.e., wanting to remember). Another distinction can be made between direct and generative retrieval, which reflects the effort involved (i.e., trying to remember......). However, it is unclear how intention and effort interacts. For example, involuntary memories and directly retrieved memories have been used interchangeably in the literature to refer to the same phenomenon of effortless, nonstrategic retrieval. More recent theoretical advances suggest...

  3. Turning Symbolic: The representation of motion direction in working memory

    Tal eSeidel Malkinson

    2016-02-01

    Full Text Available What happens to the representation of a moving stimulus when it is no longer present and its motion direction has to be maintained in working memory (WM? Is the initial, sensorial representation maintained during the delay period or is there another representation, at a higher level of abstraction? It is also feasible that multiple representations may co-exist in WM, manifesting different facets of sensory and more abstract features.To that end, we investigated the mnemonic representation of motion direction in a series of three psychophysical experiments, using a delayed motion-discrimination task (relative clockwisecounter-clockwise judgment. First, we show that a change in the dots' contrast polarity does not hamper performance. Next, we demonstrate that performance is unaffected by relocation of the Test stimulus in either retinotopic or spatiotopic coordinate frames. Finally, we show that an arrow-shaped cue presented during the delay interval between the Sample and Test stimulus, biases performance towards the direction of the arrow, although the cue itself is non-informative (it has no predictive value of the correct answer. These results indicate that the representation of motion direction in WM is independent of the physical features of the stimulus (polarity or position and has non-sensorial abstract qualities. It is plausible that an abstract mnemonic trace might be activated alongside a more basic, analogue representation of the stimulus. We speculate that the specific sensitivity of the mnemonic representation to the arrow-shaped symbol may stem from the long term learned association between direction and the hour in the clock.

  4. Boosting the FM-Index on the GPU: Effective Techniques to Mitigate Random Memory Access.

    Chacón, Alejandro; Marco-Sola, Santiago; Espinosa, Antonio; Ribeca, Paolo; Moure, Juan Carlos

    2015-01-01

    The recent advent of high-throughput sequencing machines producing big amounts of short reads has boosted the interest in efficient string searching techniques. As of today, many mainstream sequence alignment software tools rely on a special data structure, called the FM-index, which allows for fast exact searches in large genomic references. However, such searches translate into a pseudo-random memory access pattern, thus making memory access the limiting factor of all computation-efficient implementations, both on CPUs and GPUs. Here, we show that several strategies can be put in place to remove the memory bottleneck on the GPU: more compact indexes can be implemented by having more threads work cooperatively on larger memory blocks, and a k-step FM-index can be used to further reduce the number of memory accesses. The combination of those and other optimisations yields an implementation that is able to process about two Gbases of queries per second on our test platform, being about 8 × faster than a comparable multi-core CPU version, and about 3 × to 5 × faster than the FM-index implementation on the GPU provided by the recently announced Nvidia NVBIO bioinformatics library.

  5. The effects of enactment and intention accessibility on prospective memory performance.

    Schult, Janette C; Steffens, Melanie C

    2017-05-01

    The intention-superiority effect denotes faster response latencies to stimuli linked with a prospective memory task compared to stimuli linked with no prospective task or with a cancelled task. It is generally assumed that the increased accessibility of intention-related materials contributes to successful execution of prospective memory tasks at an appropriate opportunity. In two experiments we investigated the relationship between the intention-superiority effect and actual prospective memory performance under relatively realistic conditions. We also manipulated enactment versus observation encoding to further investigate the similarity in representations of enacted and to-be-enacted tasks. Additionally, Experiment 1 included a control condition to investigate the development of the intention-superiority effect over time. Participants were asked to perform prospective tasks at the end of the experiment to prepare the room for the next participant. They studied these preparatory tasks at the beginning of the experiment either by enacting them themselves or by observing the experimenter perform them. In Experiment 2, participants in a control condition did not intend to perform prospective tasks. We observed a smaller intention-superiority effect after enactment encoding than after observation encoding, but only if response latencies were assessed immediately before the prospective memory task. In addition, Experiment 2 suggested that the size of the intention-superiority effect is related to successful prospective memory performance, thus providing evidence for a functional relationship between accessibility and memory.

  6. Chemical insight into origin of forming-free resistive random-access memory devices

    Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, Xixiang; Pey, K. L.

    2011-01-01

    We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission

  7. Nanostructure-property relations for phase-change random access memory (PCRAM) line cells

    Kooi, B. J.; Oosthoek, J. L. M.; Verheijen, M. A.; Kaiser, M.; Jedema, F. J.; Gravesteijn, D. J.

    2012-01-01

    Phase-change random access memory (PCRAM) cells have been studied extensively using electrical characterization and rather limited by detailed structure characterization. The combination of these two characterization techniques has hardly been exploited and it is the focus of the present work.

  8. 76 FR 2336 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Final Results of...

    2011-01-13

    ... Semiconductors From the Republic of Korea: Final Results of Countervailing Duty Administrative Review AGENCY... administrative review of the countervailing duty order on dynamic random access memory semiconductors from the... to a change in the net subsidy rate. The final net subsidy rate for Hynix Semiconductor, Inc. is...

  9. Shared random access memory resource for multiprocessor real-time systems

    Dimmler, D.G.; Hardy, W.H. II

    1977-01-01

    A shared random-access memory resource is described which is used within real-time data acquisition and control systems with multiprocessor and multibus organizations. Hardware and software aspects are discussed in a specific example where interconnections are done via a UNIBUS. The general applicability of the approach is also discussed

  10. Cosmic and terrestrial single-event radiation effects in dynamic random access memories

    Massengill, L.W.

    1996-01-01

    A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed

  11. Adult age differences in memory in relation to availability and accessibility of knowledge-based schemas.

    Arbuckle, T Y; Vanderleck, V F; Harsany, M; Lapidus, S

    1990-03-01

    Three experiments investigated whether, over adulthood, the use of schemas to process and remember new information increases (developmental shift hypothesis), decreases (production deficiency hypothesis) or remains constant (age-invariance hypothesis). Effects of schema access were studied by having young, middle-aged, and old music experts and nonexperts recall information that was relevant or irrelevant to music (Experiment 1) and by comparing young and old participants' memory for prose passages when they knew or did not know the subject of the passage (Experiments 2 and 3). In each case, schema access facilitated memory equally across age levels, supporting the age-invariance hypothesis and implying that the basic structures and operations of memory do not necessarily change with age. Possible limits on the independence of age and schema utilization were considered in relation to the conditions under which each of the two alternative hypotheses might hold.

  12. "Forget to whom you have told this proverb'': Directed forgetting of destination memory in Alzheimer's disease

    El Haj, M.; Gandolphe, M.C.; Allain, P.; Fasotti, L.; Antoine, P.

    2015-01-01

    Destination memory is the ability to remember the receiver of transmitted information. By means of a destination memory directed forgetting task, we investigated whether participants with Alzheimer's Disease (AD) were able to suppress irrelevant information in destination memory. Twenty-six AD

  13. 75 FR 20564 - Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit...

    2010-04-20

    ... DEPARTMENT OF COMMERCE International Trade Administration [C-580-851] Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit for Preliminary Results of Countervailing Duty... access memory semiconductors from the Republic of Korea, covering the period January 1, 2008 through...

  14. Working memory, long-term memory and language processing : issues and future directions

    Collette, Fabienne; Van der Linden, Martial; Poncelet, Martine

    2000-01-01

    We examined different views of the relationships between working memory, long-term memory and language processing : working memory considered as a gateway between sensory input and long-term memory or rather as a workspace; working memory considered as not strictly tied to any particular cognitive system (and consequently viewed as separated from the language system) or rather as drawing on the operation and storage capacities of a subset of components involved in language processing. It is a...

  15. Semantic Dementia Shows both Storage and Access Disorders of Semantic Memory

    Yumi Takahashi

    2014-01-01

    Full Text Available Objective. Previous studies have shown that some patients with semantic dementia (SD have memory storage disorders, while others have access disorders. Here, we report three SD cases with both disorders. Methods. Ten pictures and ten words were prepared as visual stimuli to determine if the patients could correctly answer names and select pictures after hearing the names of items (Card Presentation Task, assessing memory storage disorder. In a second task, the viewing time was set at 20 or 300 msec (Momentary Presentation Task, evaluating memory access disorder using items for which correct answers were given in the first task. The results were compared with those for 6 patients with Alzheimer’s disease (AD. Results. The SD patients had lower scores than the AD group for both tasks, suggesting both storage and access disorders. The AD group had almost perfect scores on the Card Presentation Task but showed impairment on the Momentary Presentation Task, although to a lesser extent than the SD cases. Conclusions. These results suggest that SD patients have both storage and access disorders and have more severe access disorder than patients with AD.

  16. Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

    Phillips, G.W.; August, R.A.; Campbell, A.B.; Nelson, M.E.; Guardala, N.A.; Price, J.L.; Moscovitch, M.

    2002-01-01

    The feasibility was investigated of a solid-state neutron detector/dosemeter based on single-event upset (SEU) effects in dynamic random-access memories (DRAMs), commonly used in computer memories. Such a device, which uses a neutron converter material to produce a charged particle capable of causing an upset, would be light-weight, low-power, and could be read simply by polling the memory for bit flips. It would have significant advantages over standard solid-state neutron dosemeters which require off-line processing for track etching and analysis. Previous efforts at developing an SEU neutron detector/dosemeter have suffered from poor response, which can be greatly enhanced by selecting a modern high-density DRAM chip for SEU sensitivity and by using a thin 10 B film as a converter. Past attempts to use 10 B were not successful because the average alpha particle energy was insufficient to penetrate to the sensitive region of the memory. This can be overcome by removing the surface passivation layer before depositing the 10 B film or by implanting 10B directly into the chip. Previous experimental data show a 10 3 increase in neutron sensitivity by chips containing borosilicate glass, which could be used in an SEU detector. The results are presented of simulations showing that the absolute efficiency of an SEU neutron dosemeter can be increased by at least a factor of 1000 over earlier designs. (author)

  17. Breaking the current density threshold in spin-orbit-torque magnetic random access memory

    Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

    2018-04-01

    Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

  18. Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions

    Mingyang Gong

    2018-06-01

    Full Text Available Static Random Access Memory (SRAM Physical Unclonable Functions (PUFs are some of the most popular PUFs that provide a highly-secured solution for secret key storage. Given that PUF responses are noisy, the key reconstruction must use error correcting code (ECC to reduce the noise. Repetition code is widely used in resource constrained systems as it is concise and lightweight, however, research has shown that repetition codes can lead to information leakage. In this paper we found that the strongest cell distribution in a SRAM array may leak information of the responses of SRAM PUF when the repetition code is directly applied. Experimentally, on an ASIC platform with the HHGRACE 0.13 μm process, we recovered 8.3% of the measured response using the strongest cells revealed by the helper data, and we finally obtained a clone response 79% similar to weak response using the public helper data. We therefore propose Error Resistant Fuzzy Extractor (ERFE, a 4-bit error tolerant fuzzy extractor, that extracts the value of the sum of the responses as a unique key and reduces the failure rate to 1.8 × 10−8 with 256 bit entropy.

  19. A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories

    Nakamura, Kazuyuki; Sasao, Tsutomu; Matsuura, Munehiro; Tanaka, Katsumasa; Yoshizumi, Kenichi; Nakahara, Hiroki; Iguchi, Yukihiro

    2006-04-01

    A large-scale memory-technology-based programmable logic device (PLD) using a look-up table (LUT) cascade is developed in the 0.35-μm standard complementary metal oxide semiconductor (CMOS) logic process. Eight 64 K-bit synchronous SRAMs are connected to form an LUT cascade with a few additional circuits. The features of the LUT cascade include: 1) a flexible cascade connection structure, 2) multi phase pseudo asynchronous operations with synchronous static random access memory (SRAM) cores, and 3) LUT-bypass redundancy. This chip operates at 33 MHz in 8-LUT cascades at 122 mW. Benchmark results show that it achieves a comparable performance to field programmable gate array (FPGAs).

  20. Pigeon visual short-term memory directly compared to primates.

    Wright, Anthony A; Elmore, L Caitlin

    2016-02-01

    Three pigeons were trained to remember arrays of 2-6 colored squares and detect which of two squares had changed color to test their visual short-term memory. Procedures (e.g., stimuli, displays, viewing times, delays) were similar to those used to test monkeys and humans. Following extensive training, pigeons performed slightly better than similarly trained monkeys, but both animal species were considerably less accurate than humans with the same array sizes (2, 4 and 6 items). Pigeons and monkeys showed calculated memory capacities of one item or less, whereas humans showed a memory capacity of 2.5 items. Despite the differences in calculated memory capacities, the pigeons' memory results, like those from monkeys and humans, were all well characterized by an inverse power-law function fit to d' values for the five display sizes. This characterization provides a simple, straightforward summary of the fundamental processing of visual short-term memory (how visual short-term memory declines with memory load) that emphasizes species similarities based upon similar functional relationships. By closely matching pigeon testing parameters to those of monkeys and humans, these similar functional relationships suggest similar underlying processes of visual short-term memory in pigeons, monkeys and humans. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

    Heinonen, O.

    2014-10-05

    Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

  2. The Quality of Self, Social, and Directive Memories: Are There Adult Age Group Differences?

    Alea, Nicole; Arneaud, Mary Jane; Ali, Sideeka

    2013-01-01

    The quality of functional autobiographical memories was examined in young, middle-aged, and older adult Trinidadians ("N" = 245). Participants wrote about an event that served a self, social, and directive function, and reported on the memory's quality (e.g., significance, vividness, valence, etc.). Across age groups, directive memories…

  3. Social working memory: Neurocognitive networks and directions for future research

    Meghan L Meyer

    2012-12-01

    Full Text Available Navigating the social world requires the ability to maintain and manipulate information about people’s beliefs, traits, and mental states. We characterize this capacity as social working memory. To date, very little research has explored this phenomenon, in part because of the assumption that general working memory systems would support working memory for social information. Various lines of research, however, suggest that social cognitive processing relies on a neurocognitive network (i.e., the ‘mentalizing network’ that is functionally distinct from, and considered antagonistic with, the canonical working memory network. Here, we review evidence suggesting that demanding social cognition requires social working memory and that both the mentalizing and canonical working memory neurocognitive networks support social working memory. The neural data run counter to the common finding of parametric decreases in mentalizing regions as a function of working memory demand and suggest that the mentalizing network can support demanding cognition, when it is demanding social cognition. Implications for individual differences in social cognition and pathologies of social cognition are discussed.

  4. Main Memory

    P.A. Boncz (Peter); L. Liu (Lei); M. Tamer Özsu

    2008-01-01

    htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random

  5. Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

    Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao; Zhou Hang

    2014-01-01

    Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device. (condensed matter: structural, mechanical, and thermal properties)

  6. Shape memory alloy fixator system for suturing tissue in minimal access surgery.

    Xu, W; Frank, T G; Stockham, G; Cuschieri, A

    1999-01-01

    A new technique for suturing human tissue is described in which tissue closure is achieved by means of small fixators made from shape memory alloy. The aim of the development is to provide an alternative to thread suturing in minimal access surgery, which is quicker and requires less skill to achieve the required suturing quality. The design of the fixators is described in terms of the thermal shape recovery of shape memory alloy and a novel form of finite element analysis, which uses a nonlinear elastic element for the material property. Thermal analysis of the fixators and surrounding tissue is used to predict the temperature distribution during and after the application of electric current heating. This was checked in an in vitro experiment, which confirmed that deployment caused no detectable collateral damage to surrounding tissue. In vivo animal studies on the use of the shape memory alloy fixator for suturing tissue are ongoing to establish safety and healing effects.

  7. Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

    Zheng, Qi-Wen; Yu, Xue-Feng; Cui, Jiang-Wei; Guo, Qi; Ren, Di-Yuan; Cong, Zhong-Chao; Zhou, Hang

    2014-10-01

    Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

  8. Stream specificity and asymmetries in feature binding and content-addressable access in visual encoding and memory.

    Huynh, Duong L; Tripathy, Srimant P; Bedell, Harold E; Ögmen, Haluk

    2015-01-01

    Human memory is content addressable-i.e., contents of the memory can be accessed using partial information about the bound features of a stored item. In this study, we used a cross-feature cuing technique to examine how the human visual system encodes, binds, and retains information about multiple stimulus features within a set of moving objects. We sought to characterize the roles of three different features (position, color, and direction of motion, the latter two of which are processed preferentially within the ventral and dorsal visual streams, respectively) in the construction and maintenance of object representations. We investigated the extent to which these features are bound together across the following processing stages: during stimulus encoding, sensory (iconic) memory, and visual short-term memory. Whereas all features examined here can serve as cues for addressing content, their effectiveness shows asymmetries and varies according to cue-report pairings and the stage of information processing and storage. Position-based indexing theories predict that position should be more effective as a cue compared to other features. While we found a privileged role for position as a cue at the stimulus-encoding stage, position was not the privileged cue at the sensory and visual short-term memory stages. Instead, the pattern that emerged from our findings is one that mirrors the parallel processing streams in the visual system. This stream-specific binding and cuing effectiveness manifests itself in all three stages of information processing examined here. Finally, we find that the Leaky Flask model proposed in our previous study is applicable to all three features.

  9. Random access dynamic memory device with capacity of 4Kx16 bytes

    Damatov, Ya.M.; Nikityuk, N.M.; Nomokonova, A.I.

    1980-01-01

    Random access dynamic memory devjce with capacity of 4Kx16 bytes is described. A block diagram, time diagrams and a general view of a unit are presented. Regimes os unit operation and ways of data regeneration are described. The analyser regime and a possibility of recording data from ''R'' buses of CAMAC dataway permit to use the unit efficiency in spectrometrical channels with a high intensity of experimental events arrival. The unit is developed on the basis of using large integral circuits

  10. Random Access Memories: A New Paradigm for Target Detection in High Resolution Aerial Remote Sensing Images.

    Zou, Zhengxia; Shi, Zhenwei

    2018-03-01

    We propose a new paradigm for target detection in high resolution aerial remote sensing images under small target priors. Previous remote sensing target detection methods frame the detection as learning of detection model + inference of class-label and bounding-box coordinates. Instead, we formulate it from a Bayesian view that at inference stage, the detection model is adaptively updated to maximize its posterior that is determined by both training and observation. We call this paradigm "random access memories (RAM)." In this paradigm, "Memories" can be interpreted as any model distribution learned from training data and "random access" means accessing memories and randomly adjusting the model at detection phase to obtain better adaptivity to any unseen distribution of test data. By leveraging some latest detection techniques e.g., deep Convolutional Neural Networks and multi-scale anchors, experimental results on a public remote sensing target detection data set show our method outperforms several other state of the art methods. We also introduce a new data set "LEarning, VIsion and Remote sensing laboratory (LEVIR)", which is one order of magnitude larger than other data sets of this field. LEVIR consists of a large set of Google Earth images, with over 22 k images and 10 k independently labeled targets. RAM gives noticeable upgrade of accuracy (an mean average precision improvement of 1% ~ 4%) of our baseline detectors with acceptable computational overhead.

  11. Accessibility versus accuracy in retrieving spatial memory: evidence for suboptimal assumed headings.

    Yerramsetti, Ashok; Marchette, Steven A; Shelton, Amy L

    2013-07-01

    Orientation dependence in spatial memory has often been interpreted in terms of accessibility: Object locations are encoded relative to a reference orientation that affords the most accurate access to spatial memory. An open question, however, is whether people naturally use this "preferred" orientation whenever recalling the space. We tested this question by asking participants to locate buildings on a familiar campus from various imagined locations, without specifying the heading to be assumed. We then used these pointing judgments to infer the approximate heading participants assumed at each location. Surprisingly, each location showed a unique assumed heading that was consistent across participants and seemed to reflect episodic or visual properties of the space. This result suggests that although locations are encoded relative to a reference orientation, other factors may influence how people choose to access the stored information and whether they appeal to long-term spatial memory or other more sensory-based stores. PsycINFO Database Record (c) 2013 APA, all rights reserved.

  12. Directional hippocampal-prefrontal interactions during working memory.

    Liu, Tiaotiao; Bai, Wenwen; Xia, Mi; Tian, Xin

    2018-02-15

    Working memory refers to a system that is essential for performing complex cognitive tasks such as reasoning, comprehension and learning. Evidence shows that hippocampus (HPC) and prefrontal cortex (PFC) play important roles in working memory. The HPC-PFC interaction via theta-band oscillatory synchronization is critical for successful execution of working memory. However, whether one brain region is leading or lagging relative to another is still unclear. Therefore, in the present study, we simultaneously recorded local field potentials (LFPs) from rat ventral hippocampus (vHPC) and medial prefrontal cortex (mPFC) and while the rats performed a Y-maze working memory task. We then applied instantaneous amplitudes cross-correlation method to calculate the time lag between PFC and vHPC to explore the functional dynamics of the HPC-PFC interaction. Our results showed a strong lead from vHPC to mPFC preceded an animal's correct choice during the working memory task. These findings suggest the vHPC-leading interaction contributes to the successful execution of working memory. Copyright © 2017. Published by Elsevier B.V.

  13. Social working memory: neurocognitive networks and directions for future research.

    Meyer, Meghan L; Lieberman, Matthew D

    2012-01-01

    Navigating the social world requires the ability to maintain and manipulate information about people's beliefs, traits, and mental states. We characterize this capacity as social working memory (SWM). To date, very little research has explored this phenomenon, in part because of the assumption that general working memory systems would support working memory for social information. Various lines of research, however, suggest that social cognitive processing relies on a neurocognitive network (i.e., the "mentalizing network") that is functionally distinct from, and considered antagonistic with, the canonical working memory network. Here, we review evidence suggesting that demanding social cognition requires SWM and that both the mentalizing and canonical working memory neurocognitive networks support SWM. The neural data run counter to the common finding of parametric decreases in mentalizing regions as a function of working memory demand and suggest that the mentalizing network can support demanding cognition, when it is demanding social cognition. Implications for individual differences in social cognition and pathologies of social cognition are discussed.

  14. Immigration, language proficiency, and autobiographical memories: Lifespan distribution and second-language access.

    Esposito, Alena G; Baker-Ward, Lynne

    2016-08-01

    This investigation examined two controversies in the autobiographical literature: how cross-language immigration affects the distribution of autobiographical memories across the lifespan and under what circumstances language-dependent recall is observed. Both Spanish/English bilingual immigrants and English monolingual non-immigrants participated in a cue word study, with the bilingual sample taking part in a within-subject language manipulation. The expected bump in the number of memories from early life was observed for non-immigrants but not immigrants, who reported more memories for events surrounding immigration. Aspects of the methodology addressed possible reasons for past discrepant findings. Language-dependent recall was influenced by second-language proficiency. Results were interpreted as evidence that bilinguals with high second-language proficiency, in contrast to those with lower second-language proficiency, access a single conceptual store through either language. The final multi-level model predicting language-dependent recall, including second-language proficiency, age of immigration, internal language, and cue word language, explained ¾ of the between-person variance and (1)/5 of the within-person variance. We arrive at two conclusions. First, major life transitions influence the distribution of memories. Second, concept representation across multiple languages follows a developmental model. In addition, the results underscore the importance of considering language experience in research involving memory reports.

  15. Information matching the content of visual working memory is prioritized for conscious access.

    Gayet, S.; Paffen, C.L.E.; van der Stigchel, S.

    2013-01-01

    Visual working memory (VWM) is used to retain relevant information for imminent goal-directed behavior. In the experiments reported here, we found that VWM helps to prioritize relevant information that is not yet available for conscious experience. In five experiments, we demonstrated that

  16. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    Wu, Xing

    2011-08-29

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

  17. The content of visual working memory alters processing of visual input prior to conscious access: Evidence from pupillometry

    Gayet, S.; Paffen, C.L.E.; Guggenmos, M.; Sterzer, P.; Stigchel, S. van der

    2017-01-01

    Visual working memory (VWM) allows for keeping relevant visual information available after termination of its sensory input. Storing information in VWM, however, affects concurrent conscious perception of visual input: initially suppressed visual input gains prioritized access to consciousness when

  18. Working memory capacity predicts listwise directed forgetting in adults and children.

    Aslan, Alp; Zellner, Martina; Bäuml, Karl-Heinz T

    2010-05-01

    In listwise directed forgetting, participants are cued to forget previously studied material and to learn new material instead. Such cueing typically leads to forgetting of the first set of material and to memory enhancement of the second. The present study examined the role of working memory capacity in adults' and children's listwise directed forgetting. Working memory capacity was assessed with complex span tasks. In Experiment 1 working memory capacity predicted young adults' directed-forgetting performance, demonstrating a positive relationship between working memory capacity and each of the two directed-forgetting effects. In Experiment 2 we replicated the finding with a sample of first and a sample of fourth-grade children, and additionally showed that working memory capacity can account for age-related increases in directed-forgetting efficiency between the two age groups. Following the view that directed forgetting is mediated by inhibition of the first encoded list, the results support the proposal of a close link between working memory capacity and inhibitory function.

  19. Encoding and Retrieval Processes Involved in the Access of Source Information in the Absence of Item Memory

    Ball, B. Hunter; DeWitt, Michael R.; Knight, Justin B.; Hicks, Jason L.

    2014-01-01

    The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were "related" to the target item but never actually studied.…

  20. Daily Access to Sucrose Impairs Aspects of Spatial Memory Tasks Reliant on Pattern Separation and Neural Proliferation in Rats

    Reichelt, Amy C.; Morris, Margaret J.; Westbrook, Reginald Frederick

    2016-01-01

    High sugar diets reduce hippocampal neurogenesis, which is required for minimizing interference between memories, a process that involves "pattern separation." We provided rats with 2 h daily access to a sucrose solution for 28 d and assessed their performance on a spatial memory task. Sucrose consuming rats discriminated between objects…

  1. Children's familiarity preference in self-directed study improves recognition memory

    Adams, K.A.; Kachergis, G.E.; Markant, D.; Gunzelmann, G.; Howes, A.; Tenbrink, T.; Davelaar, E.

    2017-01-01

    In both adults and school-age children, volitional control over the presentation of stimuli during study leads to enhanced recognition memory. Yet little is known about how very young learners choose to allocate their time and attention during self-directed study. Using a recognition memory task, we

  2. Upgrade of hybrid fibre coax networks towards bi-directional access

    Khoe, G.D.; Wolters, R.P.C.; Boom, van den H.P.A.; Prati, G.

    1997-01-01

    In this paper we describe an upgrade scenario for Hybrid Fibre Coax (HFC) CATV Networks towards hi-directional access. The communication system described has been newly designed, and is based on the use of Direct Sequence- Code Division Multiple-Access (DS-CDMA). Due to its spread-spectrum

  3. New directions in research about local memory websites

    M. de Kreek (Mike); E.A. van Zoonen (Liesbet)

    2013-01-01

    markdownabstractRecent studies apply highly variable terminology in explaining the benefits of interventions using local memory websites. Our literature review systematizes this terminology into three, clearer levels of analysis that fit neatly into the empowerment framework: concepts on the micro

  4. Low-power resistive random access memory by confining the formation of conducting filaments

    Huang, Yi-Jen; Lee, Si-Chen; Shen, Tzu-Hsien; Lee, Lan-Hsuan; Wen, Cheng-Yen

    2016-01-01

    Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO_x/silver nanoparticles/TiO_x/AlTiO_x, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO_x layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

  5. Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

    Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

    2014-06-11

    Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

  6. Analysis of antigen-specific B-cell memory directly ex vivo.

    McHeyzer-Williams, Louise J; McHeyzer-Williams, Michael G

    2004-01-01

    Helper T-cell-regulated B-cell memory develops in response to initial antigen priming as a cellular product of the germinal center (GC) reaction. On antigen recall, memory response precursors expand rapidly with exaggerated differentiation into plasma cells to produce the high-titer, high-affinity antibody(Ab) that typifies the memory B-cell response in vivo. We have devised a high-resolution flow cytometric strategy to quantify the emergence and maintenance of antigen-specific memory B cells directly ex vivo. Extended cell surface phenotype establishes a level of cellular diversity not previously appreciated for the memory B-cell compartment. Using an "exclusion transfer" strategy, we ascertain the capacity of two distinct memory B-cell populations to transfer antigen-specific memory into naive adoptive hosts. Finally, we sequence expressed messenger ribonucleic acid (mRNA) from single cells within the population to estimate the level of somatic hypermutation as the best molecular indicator of B-cell memory. In this chapter, we describe the methods used in each of these four sections that serve to provide high-resolution quantification of antigen-specific B-cell memory responses directly ex vivo.

  7. Dynamic access control for two-direction shared traffic lanes

    Ebben, Mark; van der Zee, D.J.; van der Heijden, Matthijs C.

    2001-01-01

    In specific traffic situations, a single lane is available for traffic from two directions. Examples are traffic accidents or road maintenance reducing the number of available lanes on a road or, as we faced in a project on underground freight transportation, construction of a single lane for two

  8. Dynamic access control for two-direction shared traffic lanes

    Ebben, M.J.R.; van der Zee, D.J.; van der Heijden, M.C.

    2000-01-01

    In specilic traflic situations, a single lane is available for traiffic from two directions. Examples are traffic accidents or road maintenance reducing thc number of available lanes on a road or, as we faced in a project on underground freight transportation, construction of a slnglc lane for two

  9. Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments

    Arita, Yutaka; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi

    2003-07-01

    Single-event upsets (SEUs) in a 0.4 μm 4 Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476 m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using 252Cf.

  10. Dual representation of item positions in verbal short-term memory: Evidence for two access modes.

    Lange, Elke B; Verhaeghen, Paul; Cerella, John

    Memory sets of N = 1~5 digits were exposed sequentially from left-to-right across the screen, followed by N recognition probes. Probes had to be compared to memory list items on identity only (Sternberg task) or conditional on list position. Positions were probed randomly or in left-to-right order. Search functions related probe response times to set size. Random probing led to ramped, "Sternbergian" functions whose intercepts were elevated by the location requirement. Sequential probing led to flat search functions-fast responses unaffected by set size. These results suggested that items in STM could be accessed either by a slow search-on-identity followed by recovery of an associated location tag, or in a single step by following item-to-item links in study order. It is argued that this dual coding of location information occurs spontaneously at study, and that either code can be utilised at retrieval depending on test demands.

  11. Twin-bit via resistive random access memory in 16 nm FinFET logic technologies

    Shih, Yi-Hong; Hsu, Meng-Yin; King, Ya-Chin; Lin, Chrong Jung

    2018-04-01

    A via resistive random access memory (RRAM) cell fully compatible with the standard CMOS logic process has been successfully demonstrated for high-density logic nonvolatile memory (NVM) modules in advanced FinFET circuits. In this new cell, the transition metal layers are formed on both sides of a via, given two storage bits per via. In addition to its compact cell area (1T + 14 nm × 32 nm), the twin-bit via RRAM cell features a low operation voltage, a large read window, good data retention, and excellent cycling capability. As fine alignments between mask layers become possible, the twin-bit via RRAM cell is expected to be highly scalable in advanced FinFET technology.

  12. Single event upset in static random access memories in atmospheric neutron environments

    Arita, Y; Ogawa, I; Kishimoto, T

    2003-01-01

    Single-event upsets (SEUs) in a 0.4 mu m 4Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using sup 2 sup 5 sup 2 Cf. (author)

  13. Effects of Transcranial Direct Current Stimulation (tDCS) on Human Memory.

    Matzen, Laura E.; Trumbo, Michael Christopher Stefan

    2014-10-01

    Training a person in a new knowledge base or skill set is extremely time consuming and costly, particularly in highly specialized domains such as the military and the intelligence community. Recent research in cognitive neuroscience has suggested that a technique called transcranial direct current stimulation (tDCS) has the potential to revolutionize training by enabling learners to acquire new skills faster, more efficiently, and more robustly (Bullard et al., 2011). In this project, we tested the effects of tDCS on two types of memory performance that are critical for learning new skills: associative memory and working memory. Associative memory is memory for the relationship between two items or events. It forms the foundation of all episodic memories, so enhancing associative memory could provide substantial benefits to the speed and robustness of learning new information. We tested the effects of tDCS on associative memory, using a real-world associative memory task: remembering the links between faces and names. Working memory refers to the amount of information that can be held in mind and processed at one time, and it forms the basis for all higher-level cognitive processing. We investigated the degree of transfer between various working memory tasks (the N-back task as a measure of verbal working memory, the rotation-span task as a measure of visuospatial working memory, and Raven's progressive matrices as a measure of fluid intelligence) in order to determine if tDCS-induced facilitation of performance is task-specific or general.

  14. Direct access and customer choice : the meter and beyond

    Gill, J.

    1998-01-01

    Energy Service Providers (ESPs) and electric utilities have a fierce challenge ahead of them to find new customers and to retain existing ones. All ESPs looking to the future realize that they will be competing not only on the basis of price alone. New metering technology which provides more information on everything from consumption patterns to power quality data, and software that makes the information relevant to the end user, are some of the means used in meeting the challenges. Load management systems driven by real time price signals, and additional services such as security monitoring and home automation, (Internet access, environment sensing, appliance monitoring and even local telephone service) are some of the others. This state of affairs forces many ESPs and utilities to make commitments to private and public networks based primarily on wireless and telephone-based technology, which creates unprecedented opportunities for communications companies. For example, in California where the Independent System Operator requires hourly reads of meter values, as many as 15 million transactions per day are expected. It is suggested that given these developments, it will be only a matter of time before the databases maintained by utilities and ESPs will be worth more than their transmission wires

  15. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    Huang Da; Wu Jun-Jie; Tang Yu-Hua

    2013-01-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings

  16. The manufacture of system for testing static random access memory radiation effect

    Chen Rui; Yang Chen

    2008-01-01

    Space radiation effects will lead to single event upset, event latch up and other phenomena in SRAM devices. This paper introduces the hardware, software composition and related testing technology of SRAM radiation effect testing device. Through to the SRAM chip current detection and power protection, it has solved the SRAM chip damage question in the SRAM experiment. It has accessed to the expected experimental data by using the device in different source of radiation conducted on SRAM Experimental study of radiation effects. It provides important references in the assessment of operational life and reinforcement of the memory carried in the satellites. (authors)

  17. Structural analysis of anodic porous alumina used for resistive random access memory

    Lee, Jeungwoo; Nigo, Seisuke; Kato, Seiichi; Kitazawa, Hideaki; Kido, Giyuu; Nakano, Yoshihiro

    2010-01-01

    Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.

  18. A random access memory immune to single event upset using a T-Resistor

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  19. Random access memory immune to single event upset using a T-resistor

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  20. Finite temperature simulation studies of spin-flop magnetic random access memory devices

    Chui, S.T.; Chang, C.-R.

    2006-01-01

    Spin-flop structures are currently being developed for magnetic random access memory devices. We report simulation studies of this system. We found the switching involves an intermediate edge-pinned domain state, similar to that observed in the single layer case. This switching scenario is quite different from that based on the coherent rotation picture. A significant temperature dependence of the switching field is observed. Our result suggests that the interplane coupling and thus the switching field has to be above a finite threshold for the spin-flop switching to be better than conventional switching methods

  1. An 'ADC-Memory' system based on a new principle in data access

    Pan Dajing; Wu Yongqing; Wang Shibo

    1990-01-01

    A new kind of 'ADC-Memory' (ADC-M) with real time correction of counting loss in dead time is now used in a multiuser data acquisition and processing system based on DUAL/68000 microcomputer. In data access, it replaces the 'DMA + 1' in classical MCA with the new method 'DMA + N', where N is weight factor of correction. The new method is based on the principle of virtual pulse generator. This method is superior to the correction by the software because the correction needn't take the computer time. Thus, this ADC-M can be used in the counting of high rate pulses

  2. Memory of Gender and Gait Direction from Biological Motion: Gender Fades Away but Directions Stay

    Poom, Leo

    2012-01-01

    The delayed discrimination methodology has been used to demonstrate a high-fidelity nondecaying visual short-term memory (VSTM) for so-called preattentive basic features. In the current Study, I show that the nondecaying high VSTM precision is not restricted to basic features by using the same method to measure memory precision for gait direction…

  3. Experimental study on reactor neutron induced effect of deep sub-micron CMOS static random access memory

    Yang Shanchao; Guo Xiaoqiang; Lin Dongsheng; Chen Wei; Li Ruibin; Bai Xiaoyan; Wang Guizhen

    2010-01-01

    This paper investigates neutron irradiation effects of two kinds of commercial CMOS SRAM (static random access memory), of which one is 4M memory with the feature size of 0.25 μm and the other is 16M memory with the feature size of 0.13 μm. We designed a memory testing system of irradiation effects and performed the neutron irradiation experiment using the Xi'an Pulse Reactor. The upset of two kinds of memory cells did not present a threshold versus the increase of neutron fluence. The results showed that deep sub-micron SRAM behaved single-event upset (SEU) effect in neutron irradiation environment. The SEU effect of SRAM with smaller size and higher integrated level tends to upset is considered to be related to the reduction of the device feature size, and fewer charges for upsets of the memory cell also lead to the SEU effect. (authors)

  4. Cognitive control of familiarity: directed forgetting reduces proactive interference in working memory.

    Festini, Sara B; Reuter-Lorenz, Patricia A

    2014-03-01

    Proactive interference (PI) occurs when previously learned information interferes with new learning. In a working memory task, PI induces longer response times and more errors to recent negative probes than to new probes, presumably because the recent probe's familiarity invites a "yes" response. Warnings, longer intertrial intervals, and the increased contextual salience of the probes can reduce but not eliminate PI, suggesting that cognitive control over PI is limited. Here we tested whether control exerted in the form of intentional forgetting performed during working memory can reduce the magnitude of PI. In two experiments, participants performed a working memory task with directed-forgetting instructions and the occasional presentation of recent probes. Surprise long-term memory testing indicated better memory for to-be-remembered than for to-be-forgotten items, documenting the classic directed-forgetting effect. Critically, in working memory, PI was virtually eliminated for recent probes from prior to-be-forgotten lists, as compared to recent probes from prior to-be-remembered lists. Thus cognitive control, when executed via directed forgetting, can reduce the adverse and otherwise persistent interference from familiarity, an effect that we attribute to attenuated memory representations of the to-be-forgotten items.

  5. Strategic value-directed learning and memory in Alzheimer's disease and behavioural-variant frontotemporal dementia.

    Wong, Stephanie; Irish, Muireann; Savage, Greg; Hodges, John R; Piguet, Olivier; Hornberger, Michael

    2018-02-12

    In healthy adults, the ability to prioritize learning of highly valued information is supported by executive functions and enhances subsequent memory retrieval for this information. In Alzheimer's disease (AD) and behavioural-variant frontotemporal dementia (bvFTD), marked deficits are evident in learning and memory, presenting in the context of executive dysfunction. It is unclear whether these patients show a typical memory bias for higher valued stimuli. We administered a value-directed word-list learning task to AD (n = 10) and bvFTD (n = 21) patients and age-matched healthy controls (n = 22). Each word was assigned a low, medium or high point value, and participants were instructed to maximize the number of points earned across three learning trials. Participants' memory for the words was assessed on a delayed recall trial, followed by a recognition test for the words and corresponding point values. Relative to controls, both patient groups showed poorer overall learning, delayed recall and recognition. Despite these impairments, patients with AD preferentially recalled high-value words on learning trials and showed significant value-directed enhancement of recognition memory for the words and points. Conversely, bvFTD patients did not prioritize recall of high-value words during learning trials, and this reduced selectivity was related to inhibitory dysfunction. Nonetheless, bvFTD patients showed value-directed enhancement of recognition memory for the point values, suggesting a mismatch between memory of high-value information and the ability to apply this in a motivationally salient context. Our findings demonstrate that value-directed enhancement of memory may persist to some degree in patients with dementia, despite pronounced deficits in learning and memory. © 2018 The British Psychological Society.

  6. Multiple social identities and stereotype threat: imbalance, accessibility, and working memory.

    Rydell, Robert J; McConnell, Allen R; Beilock, Sian L

    2009-05-01

    In 4 experiments, the authors showed that concurrently making positive and negative self-relevant stereotypes available about performance in the same ability domain can eliminate stereotype threat effects. Replicating past work, the authors demonstrated that introducing negative stereotypes about women's math performance activated participants' female social identity and hurt their math performance (i.e., stereotype threat) by reducing working memory. Moving beyond past work, it was also demonstrated that concomitantly presenting a positive self-relevant stereotype (e.g., college students are good at math) increased the relative accessibility of females' college student identity and inhibited their gender identity, eliminating attendant working memory deficits and contingent math performance decrements. Furthermore, subtle manipulations in questions presented in the demographic section of a math test eliminated stereotype threat effects that result from women reporting their gender before completing the test. This work identifies the motivated processes through which people's social identities became active in situations in which self-relevant stereotypes about a stigmatized group membership and a nonstigmatized group membership were available. In addition, it demonstrates the downstream consequences of this pattern of activation on working memory and performance. Copyright (c) 2009 APA, all rights reserved.

  7. Ga-doped indium oxide nanowire phase change random access memory cells

    Jin, Bo; Lee, Jeong-Soo; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I; Kim, Hyoung Seop; Meyyappan, M

    2014-01-01

    Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In 2 O 3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition. (paper)

  8. [Effects of construct accessibility and self-schema on person memory].

    Kitamura, H

    1991-10-01

    The present study investigated the relationship among construct accessibility, self-schema and person memory. Three hundred and thirty-four subjects received 40 behavioral descriptions of a stimulus person, consisting of eight specific behaviors on each of five trait-dimensions. Subjects also rated personality traits of their acquaintances and themselves on nine-point bipolar scales and ranked the importance of the five trait-dimensions. Weights, which subjects assigned to each of the five dimensions, were calculated as indices of construct accessibility. Self-schema scores of each subject were also calculated based on his/her ratings. Multiple regression analyses indicated that the dimensional weights and self-schema scores were positively correlated with the recall performance of the descriptions of the stimulus person. The schematics recalled significantly more descriptions than the aschematics, whether their self-schema was positive or negative. Subjects who had positive self-schema showed higher construct accessibility than the aschematics. It was argued that the relationship between construct accessibility and self-schema might be affected by motivational factors such as self-esteem.

  9. Making working memory work: the effects of extended practice on focus capacity and the processes of updating, forward access, and random access.

    Price, John M; Colflesh, Gregory J H; Cerella, John; Verhaeghen, Paul

    2014-05-01

    We investigated the effects of 10h of practice on variations of the N-Back task to investigate the processes underlying possible expansion of the focus of attention within working memory. Using subtractive logic, we showed that random access (i.e., Sternberg-like search) yielded a modest effect (a 50% increase in speed) whereas the processes of forward access (i.e., retrieval in order, as in a standard N-Back task) and updating (i.e., changing the contents of working memory) were executed about 5 times faster after extended practice. We additionally found that extended practice increased working memory capacity as measured by the size of the focus of attention for the forward-access task, but not for variations where probing was in random order. This suggests that working memory capacity may depend on the type of search process engaged, and that certain working-memory-related cognitive processes are more amenable to practice than others. Copyright © 2014 Elsevier B.V. All rights reserved.

  10. Accessibility of observable and unobservable characteristics in autobiographical memories of recent and distant past.

    Karylowski, Jerzy J; Mrozinski, Blazej

    2017-02-01

    Self-reports regarding how people visualise themselves during events that occurred in the past show that for events from the distant past individuals report assuming a more external perspective than for events from the recent past [Nigro, G., & Neisser, U. (1983). Point of view in personal memories. Cognitive Psychology, 15, 467-482; Pronin, E., & Ross, L. (2006). Temporal differences in trait self-ascription. Journal of Personality & Social Psychology, 90, 197-209]. Thus it appears that, with the passage of time, representations of self embodied in memories of past events lose their position of an insider and assume a more ordinary position of self as an object seen from the perspective of an outside observer. The purpose of the present experiment was to examine this shift using a performance-based measure of accessibility. Results showed that self-judgements regarding unobservable, covert characteristics were faster for recent-compared to more distant-autobiographical events. However, self-judgements regarding observable, overt characteristics were faster for more distant events. This suggests an accessibility-based mechanism underlying the shift from internal to the relatively more external perspective in forming self-images related to the distant past.

  11. Spectrotemporal processing drives fast access to memory traces for spoken words.

    Tavano, A; Grimm, S; Costa-Faidella, J; Slabu, L; Schröger, E; Escera, C

    2012-05-01

    The Mismatch Negativity (MMN) component of the event-related potentials is generated when a detectable spectrotemporal feature of the incoming sound does not match the sensory model set up by preceding repeated stimuli. MMN is enhanced at frontocentral scalp sites for deviant words when compared to acoustically similar deviant pseudowords, suggesting that automatic access to long-term memory traces for spoken words contributes to MMN generation. Does spectrotemporal feature matching also drive automatic lexical access? To test this, we recorded human auditory event-related potentials (ERPs) to disyllabic spoken words and pseudowords within a passive oddball paradigm. We first aimed at replicating the word-related MMN enhancement effect for Spanish, thereby adding to the available cross-linguistic evidence (e.g., Finnish, English). We then probed its resilience to spectrotemporal perturbation by inserting short (20 ms) and long (120 ms) silent gaps between first and second syllables of deviant and standard stimuli. A significantly enhanced, frontocentrally distributed MMN to deviant words was found for stimuli with no gap. The long gap yielded no deviant word MMN, showing that prior expectations of word form limits in a given language influence deviance detection processes. Crucially, the insertion of a short gap suppressed deviant word MMN enhancement at frontocentral sites. We propose that spectrotemporal point-wise matching constitutes a core mechanism for fast serial computations in audition and language, bridging sensory and long-term memory systems. Copyright © 2012 Elsevier Inc. All rights reserved.

  12. Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

    Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

    2018-01-01

    We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

  13. On the interplay between working memory consolidation and attentional selection in controlling conscious access : Parallel processing at a cost-a comment on 'The interplay of attention and consciousness in visual search, attentional blink and working memory consolidation'

    Wyble, Brad; Bowman, Howard; Nieuwenstein, Mark

    On the interplay between working memory consolidation and attentional selection in controlling conscious access: parallel processing at a cost-a comment on 'The interplay of attention and consciousness in visual search, attentional blink and working memory consolidation'

  14. Directional Medium Access Control (MAC Protocols in Wireless Ad Hoc and Sensor Networks: A Survey

    David Tung Chong Wong

    2015-06-01

    Full Text Available This survey paper presents the state-of-the-art directional medium access control (MAC protocols in wireless ad hoc and sensor networks (WAHSNs. The key benefits of directional antennas over omni-directional antennas are longer communication range, less multipath interference, more spatial reuse, more secure communications, higher throughput and reduced latency. However, directional antennas lead to single-/multi-channel directional hidden/exposed terminals, deafness and neighborhood, head-of-line blocking, and MAC-layer capture which need to be overcome. Addressing these problems and benefits for directional antennas to MAC protocols leads to many classes of directional MAC protocols in WAHSNs. These classes of directional MAC protocols presented in this survey paper include single-channel, multi-channel, cooperative and cognitive directional MACs. Single-channel directional MAC protocols can be classified as contention-based or non-contention-based or hybrid-based, while multi-channel directional MAC protocols commonly use a common control channel for control packets/tones and one or more data channels for directional data transmissions. Cooperative directional MAC protocols improve throughput in WAHSNs via directional multi-rate/single-relay/multiple-relay/two frequency channels/polarization, while cognitive directional MAC protocols leverage on conventional directional MAC protocols with new twists to address dynamic spectrum access. All of these directional MAC protocols are the pillars for the design of future directional MAC protocols in WAHSNs.

  15. Cocaine Directly Impairs Memory Extinction and Alters Brain DNA Methylation Dynamics in Honey Bees.

    Søvik, Eirik; Berthier, Pauline; Klare, William P; Helliwell, Paul; Buckle, Edwina L S; Plath, Jenny A; Barron, Andrew B; Maleszka, Ryszard

    2018-01-01

    Drug addiction is a chronic relapsing behavioral disorder. The high relapse rate has often been attributed to the perseverance of drug-associated memories due to high incentive salience of stimuli learnt under the influence of drugs. Drug addiction has also been interpreted as a memory disorder since drug associated memories are unusually enduring and some drugs, such as cocaine, interfere with neuroepigenetic machinery known to be involved in memory processing. Here we used the honey bee (an established invertebrate model for epigenomics and behavioral studies) to examine whether or not cocaine affects memory processing independently of its effect on incentive salience. Using the proboscis extension reflex training paradigm we found that cocaine strongly impairs consolidation of extinction memory. Based on correlation between the observed effect of cocaine on learning and expression of epigenetic processes, we propose that cocaine interferes with memory processing independently of incentive salience by directly altering DNA methylation dynamics. Our findings emphasize the impact of cocaine on memory systems, with relevance for understanding how cocaine can have such an enduring impact on behavior.

  16. Cocaine Directly Impairs Memory Extinction and Alters Brain DNA Methylation Dynamics in Honey Bees

    Eirik Søvik

    2018-02-01

    Full Text Available Drug addiction is a chronic relapsing behavioral disorder. The high relapse rate has often been attributed to the perseverance of drug-associated memories due to high incentive salience of stimuli learnt under the influence of drugs. Drug addiction has also been interpreted as a memory disorder since drug associated memories are unusually enduring and some drugs, such as cocaine, interfere with neuroepigenetic machinery known to be involved in memory processing. Here we used the honey bee (an established invertebrate model for epigenomics and behavioral studies to examine whether or not cocaine affects memory processing independently of its effect on incentive salience. Using the proboscis extension reflex training paradigm we found that cocaine strongly impairs consolidation of extinction memory. Based on correlation between the observed effect of cocaine on learning and expression of epigenetic processes, we propose that cocaine interferes with memory processing independently of incentive salience by directly altering DNA methylation dynamics. Our findings emphasize the impact of cocaine on memory systems, with relevance for understanding how cocaine can have such an enduring impact on behavior.

  17. Response of the Ubiquitin-Proteasome System to Memory Retrieval After Extended-Access Cocaine or Saline Self-Administration.

    Werner, Craig T; Milovanovic, Mike; Christian, Daniel T; Loweth, Jessica A; Wolf, Marina E

    2015-12-01

    The ubiquitin-proteasome system (UPS) has been implicated in the retrieval-induced destabilization of cocaine- and fear-related memories in Pavlovian paradigms. However, nothing is known about its role in memory retrieval after self-administration of cocaine, an operant paradigm, or how the length of withdrawal from cocaine may influence retrieval mechanisms. Here, we examined UPS activity after an extended-access cocaine self-administration regimen that leads to withdrawal-dependent incubation of cue-induced cocaine craving. Controls self-administered saline. In initial experiments, memory retrieval was elicited via a cue-induced seeking/retrieval test on withdrawal day (WD) 50-60, when craving has incubated. We found that retrieval of cocaine- and saline-associated memories produced similar increases in polyubiquitinated proteins in the nucleus accumbens (NAc), compared with rats that did not undergo a seeking/retrieval test. Measures of proteasome catalytic activity confirmed similar activation of the UPS after retrieval of saline and cocaine memories. However, in a subsequent experiment in which testing was conducted on WD1, proteasome activity in the NAc was greater after retrieval of cocaine memory than saline memory. Analysis of other brain regions confirmed that effects of cocaine memory retrieval on proteasome activity, relative to saline memory retrieval, depend on withdrawal time. These results, combined with prior studies, suggest that the relationship between UPS activity and memory retrieval depends on training paradigm, brain region, and time elapsed between training and retrieval. The observation that mechanisms underlying cocaine memory retrieval change depending on the age of the memory has implications for development of memory destabilization therapies for cue-induced relapse in cocaine addicts.

  18. Variation in Direct Access to Tests to Investigate Cancer: A Survey of English General Practitioners.

    Brian D Nicholson

    Full Text Available The 2015 NICE guidelines for suspected cancer recommend that English General Practitioners have direct access to diagnostic tests to investigate symptoms of cancer that do not meet the criteria for urgent referral. We aimed to identify the proportion of GPs in England with direct access to these tests.We recruited 533 English GPs through a national clinical research network to complete an online survey about direct access to laboratory, radiology, and endoscopy tests in the three months leading up to the release of the 2015 NICE guidance. If they had direct access to a diagnostic test, GPs were asked about the time necessary to arrange a test and receive a report. Results are reported by NHS sub-region and, adjusting for sampling, for England as a whole.Almost all GPs reported direct access to x-ray and laboratory investigations except faecal occult blood testing (54%, 95% CI 49-59% and urine protein electrophoresis (89%, 95% CI 84-92%. Fewer GPs had direct access to CT scans (54%, 95% CI 49-59% or endoscopy (colonoscopy 32%, 95% CI 28-37%; gastroscopy 72%, 95% CI 67-77%. There was significant variation in direct access between NHS regions for the majority of imaging tests-for example, from 20 to 85% to MRI. Apart from x-ray, very few GPs (1-22% could access radiology and endoscopy within the timescales recommended by NICE. The modal request to test time was 2-4 weeks for routine radiology and 4-6 weeks for routine endoscopy with results taking another 1-2 weeks.At the time that the 2015 NICE guideline was released, local investment was required to not only provide direct access but also reduce the interval between request and test and speed up reporting. Further research using our data as a benchmark is now required to identify whether local improvements in direct access have been achieved in response to the NICE targets. If alternative approaches to test access are to be proposed they must be piloted comprehensively and underpinned by robust

  19. Variation in Direct Access to Tests to Investigate Cancer: A Survey of English General Practitioners

    Nicholson, Brian D.; Oke, Jason L.; Rose, Peter W.; Mant, David

    2016-01-01

    Background The 2015 NICE guidelines for suspected cancer recommend that English General Practitioners have direct access to diagnostic tests to investigate symptoms of cancer that do not meet the criteria for urgent referral. We aimed to identify the proportion of GPs in England with direct access to these tests. Methods We recruited 533 English GPs through a national clinical research network to complete an online survey about direct access to laboratory, radiology, and endoscopy tests in the three months leading up to the release of the 2015 NICE guidance. If they had direct access to a diagnostic test, GPs were asked about the time necessary to arrange a test and receive a report. Results are reported by NHS sub-region and, adjusting for sampling, for England as a whole. Results Almost all GPs reported direct access to x-ray and laboratory investigations except faecal occult blood testing (54%, 95% CI 49–59%) and urine protein electrophoresis (89%, 95% CI 84–92%). Fewer GPs had direct access to CT scans (54%, 95% CI 49–59%) or endoscopy (colonoscopy 32%, 95% CI 28–37%; gastroscopy 72%, 95% CI 67–77%). There was significant variation in direct access between NHS regions for the majority of imaging tests—for example, from 20 to 85% to MRI. Apart from x-ray, very few GPs (1–22%) could access radiology and endoscopy within the timescales recommended by NICE. The modal request to test time was 2–4 weeks for routine radiology and 4–6 weeks for routine endoscopy with results taking another 1–2 weeks. Conclusion At the time that the 2015 NICE guideline was released, local investment was required to not only provide direct access but also reduce the interval between request and test and speed up reporting. Further research using our data as a benchmark is now required to identify whether local improvements in direct access have been achieved in response to the NICE targets. If alternative approaches to test access are to be proposed they must be

  20. A model for Intelligent Random Access Memory architecture (IRAM) cellular automata algorithms on the Associative String Processing machine (ASTRA)

    Rohrbach, F; Vesztergombi, G

    1997-01-01

    In the near future, the computer performance will be completely determined by how long it takes to access memory. There are bottle-necks in memory latency and memory-to processor interface bandwidth. The IRAM initiative could be the answer by putting Processor-In-Memory (PIM). Starting from the massively parallel processing concept, one reached a similar conclusion. The MPPC (Massively Parallel Processing Collaboration) project and the 8K processor ASTRA machine (Associative String Test bench for Research \\& Applications) developed at CERN \\cite{kuala} can be regarded as a forerunner of the IRAM concept. The computing power of the ASTRA machine, regarded as an IRAM with 64 one-bit processors on a 64$\\times$64 bit-matrix memory chip machine, has been demonstrated by running statistical physics algorithms: one-dimensional stochastic cellular automata, as a simple model for dynamical phase transitions. As a relevant result for physics, the damage spreading of this model has been investigated.

  1. Using Direct Sub-Level Entity Access to Improve Nuclear Stockpile Simulation Modeling

    Parker, Robert Y. [Brigham Young Univ., Provo, UT (United States)

    1999-08-01

    Direct sub-level entity access is a seldom-used technique in discrete-event simulation modeling that addresses the accessibility of sub-level entity information. The technique has significant advantages over more common, alternative modeling methods--especially where hierarchical entity structures are modeled. As such, direct sub-level entity access is often preferable in modeling nuclear stockpile, life-extension issues, an area to which it has not been previously applied. Current nuclear stockpile, life-extension models were demonstrated to benefit greatly from the advantages of direct sub-level entity access. In specific cases, the application of the technique resulted in models that were up to 10 times faster than functionally equivalent models where alternative techniques were applied. Furthermore, specific implementations of direct sub-level entity access were observed to be more flexible, efficient, functional, and scalable than corresponding implementations using common modeling techniques. Common modeling techniques (''unbatch/batch'' and ''attribute-copying'') proved inefficient and cumbersome in handling many nuclear stockpile modeling complexities, including multiple weapon sites, true defect analysis, and large numbers of weapon and subsystem types. While significant effort was required to enable direct sub-level entity access in the nuclear stockpile simulation models, the enhancements were worth the effort--resulting in more efficient, more capable, and more informative models that effectively addressed the complexities of the nuclear stockpile.

  2. Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

    Huh, In; Cheon, Woo Young; Choi, Woo Young

    2016-04-01

    A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

  3. Direct Writing of Three-Dimensional Macroporous Photonic Crystals on Pressure-Responsive Shape Memory Polymers.

    Fang, Yin; Ni, Yongliang; Leo, Sin-Yen; Wang, Bingchen; Basile, Vito; Taylor, Curtis; Jiang, Peng

    2015-10-28

    Here we report a single-step direct writing technology for making three-dimensional (3D) macroporous photonic crystal patterns on a new type of pressure-responsive shape memory polymer (SMP). This approach integrates two disparate fields that do not typically intersect: the well-established templating nanofabrication and shape memory materials. Periodic arrays of polymer macropores templated from self-assembled colloidal crystals are squeezed into disordered arrays in an unusual shape memory "cold" programming process. The recovery of the original macroporous photonic crystal lattices can be triggered by direct writing at ambient conditions using both macroscopic and nanoscopic tools, like a pencil or a nanoindenter. Interestingly, this shape memory disorder-order transition is reversible and the photonic crystal patterns can be erased and regenerated hundreds of times, promising the making of reconfigurable/rewritable nanooptical devices. Quantitative insights into the shape memory recovery of collapsed macropores induced by the lateral shear stresses in direct writing are gained through fundamental investigations on important process parameters, including the tip material, the critical pressure and writing speed for triggering the recovery of the deformed macropores, and the minimal feature size that can be directly written on the SMP membranes. Besides straightforward applications in photonic crystal devices, these smart mechanochromic SMPs that are sensitive to various mechanical stresses could render important technological applications ranging from chromogenic stress and impact sensors to rewritable high-density optical data storage media.

  4. The Role of Memory Traces Quality in Directed Forgetting: A Comparison of Young and Older Participants

    Fabienne Collette

    2014-06-01

    Full Text Available A reduced directed-forgetting (DF effect in normal aging has frequently been observed with the item method. These results were interpreted as age-related difficulties in inhibiting the processing of irrelevant information. However, since the performance of older adults is usually lower on items to remember, the age effect on DF abilities could also be interpreted as reflecting memory problems. Consequently, the present study aimed at investigating the influence of memory traces quality on the magnitude of the DF effects in normal aging. We predicted that increasing the quality of memory traces (by increasing presentation times at encoding would be associated with attenuated DF effects in older participants due to the increased difficulty of inhibiting highly activated memory traces. A classical item-method DF paradigm was administered to 48 young and 48 older participants under short and long encoding conditions. Memory performance for information to memorize and to suppress was assessed with recall and recognition procedures, as well as with a Remember/Know/Guess (RKG paradigm. The results indicated that, when memory traces are equated between groups, DF effects observed with the recall, recognition and RKG procedures are of similar amplitude in both groups (all ps>0.05. This suggests that the decreased DF effect previously observed in older adults might not actually depend on their inhibitory abilities but may rather reflect quantitative and qualitative differences in episodic memory functioning.

  5. Low-energy neutron-induced single-event upsets in static random access memory

    Guo Xiaoqiang; Guo Hongxia; Wang Guizhen; Ling Dongsheng; Chen Wei; Bai Xiaoyan; Yang Shanchao; Liu Yan

    2009-01-01

    The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size(from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi'an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM's feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons. (authors)

  6. Surface effects of electrode-dependent switching behavior of resistive random-access memory

    Ke, Jr Jian

    2016-09-26

    The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device\\'s switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.

  7. Chemical insight into origin of forming-free resistive random-access memory devices

    Wu, X.

    2011-09-29

    We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

  8. A radiation-hardened 1K-bit dielectrically isolated random access memory

    Sandors, T.J.; Boarman, J.W.; Kasten, A.J.; Wood, G.M.

    1982-01-01

    Dielectric Isolation has been used for many years as the bipolar technology for latch-up free, radiation hardened integrated circuits in strategic systems. The state-of-the-art up to this point has been the manufacture of MSI functions containing a maximum of several hundred isolated components. This paper discusses a 1024 Bit Random Access Memory chip containing over 4000 dielectrically isolated components which has been designed for strategic radiation environments. The process utilized and the circuit design of the 1024 Bit RAM have been previously discussed. The techniques used are similar to those employed for the MX digital integrated circuits except for specific items required to make this a true LSI technology. These techniques, along with electrical and radiation data for the RAM, are presented

  9. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-01

    A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  10. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-01-01

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  11. Affect, accessibility of material in memory, and behavior: a cognitive loop?

    Isen, A M; Shalker, T E; Clark, M; Karp, L

    1978-01-01

    Two studies investigated the effect of good mood on cognitive processes. In the first study, conducted in a shopping mall, a positive feeling state was induced by giving subjects a free gift, and good mood, thus induced, was found to improve subjects' evaluations of the performance and service records of products they owned. In the second study, in which affect was induced by having subjects win or lose a computer game in a laboratory setting, subjects who had won the game were found to be better able to recall positive material in memory. The results of the two studies are discussed in terms of the effect that feelings have on accessibility of cognitions. In addition, the nature of affect and the relationship between good mood and behavior (such as helping) are discussed in terms of this proposed cognitive process.

  12. Stable switching of resistive random access memory on the nanotip array electrodes

    Tsai, Kun-Tong

    2016-09-13

    The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.

  13. Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

    Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

    2016-04-01

    The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

  14. Context controls access to working and reference memory in the pigeon (Columba livia).

    Roberts, William A; Macpherson, Krista; Strang, Caroline

    2016-01-01

    The interaction between working and reference memory systems was examined under conditions in which salient contextual cues were presented during memory retrieval. Ambient colored lights (red or green) bathed the operant chamber during the presentation of comparison stimuli in delayed matching-to-sample training (working memory) and during the presentation of the comparison stimuli as S+ and S- cues in discrimination training (reference memory). Strong competition between memory systems appeared when the same contextual cue appeared during working and reference memory training. When different contextual cues were used, however, working memory was completely protected from reference memory interference. © 2016 Society for the Experimental Analysis of Behavior.

  15. Performance analysis and comparison of a minimum interconnections direct storage model with traditional neural bidirectional memories.

    Bhatti, A Aziz

    2009-12-01

    This study proposes an efficient and improved model of a direct storage bidirectional memory, improved bidirectional associative memory (IBAM), and emphasises the use of nanotechnology for efficient implementation of such large-scale neural network structures at a considerable lower cost reduced complexity, and less area required for implementation. This memory model directly stores the X and Y associated sets of M bipolar binary vectors in the form of (MxN(x)) and (MxN(y)) memory matrices, requires O(N) or about 30% of interconnections with weight strength ranging between +/-1, and is computationally very efficient as compared to sequential, intraconnected and other bidirectional associative memory (BAM) models of outer-product type that require O(N(2)) complex interconnections with weight strength ranging between +/-M. It is shown that it is functionally equivalent to and possesses all attributes of a BAM of outer-product type, and yet it is simple and robust in structure, very large scale integration (VLSI), optical and nanotechnology realisable, modular and expandable neural network bidirectional associative memory model in which the addition or deletion of a pair of vectors does not require changes in the strength of interconnections of the entire memory matrix. The analysis of retrieval process, signal-to-noise ratio, storage capacity and stability of the proposed model as well as of the traditional BAM has been carried out. Constraints on and characteristics of unipolar and bipolar binaries for improved storage and retrieval are discussed. The simulation results show that it has log(e) N times higher storage capacity, superior performance, faster convergence and retrieval time, when compared to traditional sequential and intraconnected bidirectional memories.

  16. Different Roles of Direct and Indirect Frontoparietal Pathways for Individual Working Memory Capacity.

    Ekman, Matthias; Fiebach, Christian J; Melzer, Corina; Tittgemeyer, Marc; Derrfuss, Jan

    2016-03-09

    The ability to temporarily store and manipulate information in working memory is a hallmark of human intelligence and differs considerably across individuals, but the structural brain correlates underlying these differences in working memory capacity (WMC) are only poorly understood. In two separate studies, diffusion MRI data and WMC scores were collected for 70 and 109 healthy individuals. Using a combination of probabilistic tractography and network analysis of the white matter tracts, we examined whether structural brain network properties were predictive of individual WMC. Converging evidence from both studies showed that lateral prefrontal cortex and posterior parietal cortex of high-capacity individuals are more densely connected compared with low-capacity individuals. Importantly, our network approach was further able to dissociate putative functional roles associated with two different pathways connecting frontal and parietal regions: a corticocortical pathway and a subcortical pathway. In Study 1, where participants were required to maintain and update working memory items, the connectivity of the direct and indirect pathway was predictive of WMC. In contrast, in Study 2, where participants were required to maintain working memory items without updating, only the connectivity of the direct pathway was predictive of individual WMC. Our results suggest an important dissociation in the circuitry connecting frontal and parietal regions, where direct frontoparietal connections might support storage and maintenance, whereas subcortically mediated connections support the flexible updating of working memory content. Copyright © 2016 the authors 0270-6474/16/362894-10$15.00/0.

  17. Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

    Sharma, Ashok K.; Teverovsky, Alexander

    2001-01-01

    Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

  18. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

    Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

    2018-05-01

    Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

  19. Boosting Cognition : Effects of Multiple-Session Transcranial Direct Current Stimulation on Working Memory

    Talsma, L.J.; Kroese, H.A.; Slagter, H.A.

    Transcranial direct current stimulation (tDCS) is a promising tool for neurocognitive enhancement. Several studies have shown that just a single session of tDCS over the left dorsolateral pFC (lDLPFC) can improve the core cognitive function of working memory (WM) in healthy adults. Yet, recent

  20. A Modified Limited-Memory BNS Method for Unconstrained Minimization Based on the Conjugate Directions Idea

    Vlček, Jan; Lukšan, Ladislav

    2015-01-01

    Roč. 30, č. 3 (2015), s. 616-633 ISSN 1055-6788 R&D Projects: GA ČR GA13-06684S Institutional support: RVO:67985807 Keywords : unconstrained minimization * variable metric methods * limited-memory methods * the BFGS update * conjugate directions * numerical results Subject RIV: BA - General Mathematics Impact factor: 0.841, year: 2015

  1. Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture

    Kim, Min-Hoi; Lee, Gyu Jeong; Keum, Chang-Min; Lee, Sin-Doo

    2014-01-01

    We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on–off ratio and the high switching on–off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM. (paper)

  2. Transcranial direct current stimulation over the right DLPFC selectively modulates subprocesses in working memory

    Jiarui Wang

    2018-05-01

    Full Text Available Background Working memory, as a complex system, consists of two independent components: manipulation and maintenance process, which are defined as executive control and storage process. Previous studies mainly focused on the overall effect of transcranial direct current stimulation (tDCS on working memory. However, little has been known about the segregative effects of tDCS on the sub-processes within working memory. Method Transcranial direct current stimulation, as one of the non-invasive brain stimulation techniques, is being widely used to modulate the cortical activation of local brain areas. This study modified a spatial n-back experiment with anodal and cathodal tDCS exertion on the right dorsolateral prefrontal cortex (DLPFC, aiming to investigate the effects of tDCS on the two sub-processes of working memory: manipulation (updating and maintenance. Meanwhile, considering the separability of tDCS effects, we further reconfirmed the causal relationship between the right DLPFC and the sub-processes of working memory with different tDCS conditions. Results The present study showed that cathodal tDCS on the right DLPFC selectively improved the performance of the modified 2-back task in the difficult condition, whereas anodal tDCS significantly reduced the performance of subjects and showed an speeding-up tendency of response time. More precisely, the results of discriminability index and criterion showed that only cathodal tDCS enhanced the performance of maintenance in the difficult condition. Neither of the two tDCS conditions affected the performance of manipulation (updating. Conclusion These findings provide evidence that cathodal tDCS of the right DLPFC selectively affects maintenance capacity. Besides, cathodal tDCS also serves as an interference suppressor to reduce the irrelevant interference, thereby indirectly improving the working memory capacity. Moreover, the right DLPFC is not the unique brain regions for working memory

  3. How Do We Update Faces? Effects of Gaze Direction and Facial Expressions on Working Memory Updating

    Artuso, Caterina; Palladino, Paola; Ricciardelli, Paola

    2012-01-01

    The aim of the study was to investigate how the biological binding between different facial dimensions, and their social and communicative relevance, may impact updating processes in working memory (WM). We focused on WM updating because it plays a key role in ongoing processing. Gaze direction and facial expression are crucial and changeable components of face processing. Direct gaze enhances the processing of approach-oriented facial emotional expressions (e.g., joy), while averted gaze enh...

  4. Integrated Optical Content Addressable Memories (CAM and Optical Random Access Memories (RAM for Ultra-Fast Address Look-Up Operations

    Christos Vagionas

    2017-07-01

    Full Text Available Electronic Content Addressable Memories (CAM implement Address Look-Up (AL table functionalities of network routers; however, they typically operate in the MHz regime, turning AL into a critical network bottleneck. In this communication, we demonstrate the first steps towards developing optical CAM alternatives to enable a re-engineering of AL memories. Firstly, we report on the photonic integration of Semiconductor Optical Amplifier-Mach Zehnder Interferometer (SOA-MZI-based optical Flip-Flop and Random Access Memories on a monolithic InP platform, capable of storing the binary prefix-address data-bits and the outgoing port information for next hop routing, respectively. Subsequently the first optical Binary CAM cell (B-CAM is experimentally demonstrated, comprising an InP Flip-Flop and a SOA-MZI Exclusive OR (XOR gate for fast search operations through an XOR-based bit comparison, yielding an error-free 10 Gb/s operation. This is later extended via physical layer simulations in an optical Ternary-CAM (T-CAM cell and a 4-bit Matchline (ML configuration, supporting a third state of the “logical X” value towards wildcard bits of network subnet masks. The proposed functional CAM and Random Access Memories (RAM sub-circuits may facilitate light-based Address Look-Up tables supporting search operations at 10 Gb/s and beyond, paving the way towards minimizing the disparity with the frantic optical transmission linerates, and fast re-configurability through multiple simultaneous Wavelength Division Multiplexed (WDM memory access requests.

  5. European union water policy--tasks for implementing "Water Framework Directive" in pre-accession countries.

    Sözen, Seval; Avcioglu, Ebru; Ozabali, Asli; Görgun, Erdem; Orhon, Derin

    2003-08-01

    Water Framework Directive aiming to maintain and improve the aquatic environment in the EU was launched by the European Parliament in 2000. According to this directive, control of quantity is an ancillary element in securing good water quality and therefore measures on quantity, serving the objective of ensuring good quality should also be established. Accordingly, it is a comprehensive and coordinated package that will ensure all European waters to be protected according to a common standard. Therefore, it refers to all other Directives related to water resources management such as Urban Wastewater Treatment Directive Nitrates Directive, Drinking Water Directive, Integrated Pollution Prevention Control etc. Turkey, as a candidate state targeting full-membership, should comply the necessary preparations for the implementation of the "Water Framework Directive" as soon as possible. In this study, the necessary legislative, political, institutional, and technical attempts of the pre-accession countries have been discussed and effective recommendations have been offered for future activities in Turkey.

  6. 76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

    2011-09-07

    ... Bldg. 3F, 2-1 Yaesu 2- chome Chuo-ku, Tokyo 104-0028, Japan. Elpida Memory (USA) Inc., 1175 Sonora..., Round Rock, TX 78682. Hewlett-Packard Company, 3000 Hanover Street, Palo Alto, CA 94304. Kingston...

  7. Factor structure of overall autobiographical memory usage: the directive, self and social functions revisited.

    Rasmussen, Anne S; Habermas, Tilmann

    2011-08-01

    According to theory, autobiographical memory serves three broad functions of overall usage: directive, self, and social. However, there is evidence to suggest that the tripartite model may be better conceptualised in terms of a four-factor model with two social functions. In the present study we examined the two models in Danish and German samples, using the Thinking About Life Experiences Questionnaire (TALE; Bluck, Alea, Habermas, & Rubin, 2005), which measures the overall usage of the three functions generalised across concrete memories. Confirmatory factor analysis supported the four-factor model and rejected the theoretical three-factor model in both samples. The results are discussed in relation to cultural differences in overall autobiographical memory usage as well as sharing versus non-sharing aspects of social remembering.

  8. SuperLU{_}DIST: A scalable distributed-memory sparse direct solver for unsymmetric linear systems

    Li, Xiaoye S.; Demmel, James W.

    2002-03-27

    In this paper, we present the main algorithmic features in the software package SuperLU{_}DIST, a distributed-memory sparse direct solver for large sets of linear equations. We give in detail our parallelization strategies, with focus on scalability issues, and demonstrate the parallel performance and scalability on current machines. The solver is based on sparse Gaussian elimination, with an innovative static pivoting strategy proposed earlier by the authors. The main advantage of static pivoting over classical partial pivoting is that it permits a priori determination of data structures and communication pattern for sparse Gaussian elimination, which makes it more scalable on distributed memory machines. Based on this a priori knowledge, we designed highly parallel and scalable algorithms for both LU decomposition and triangular solve and we show that they are suitable for large-scale distributed memory machines.

  9. A direct metal transfer method for cross-bar type polymer non-volatile memory applications

    Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

    2008-01-01

    Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

  10. Memory

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  11. Goal-directed mechanisms that constrain retrieval predict subsequent memory for new "foil" information.

    Vogelsang, David A; Bonnici, Heidi M; Bergström, Zara M; Ranganath, Charan; Simons, Jon S

    2016-08-01

    To remember a previous event, it is often helpful to use goal-directed control processes to constrain what comes to mind during retrieval. Behavioral studies have demonstrated that incidental learning of new "foil" words in a recognition test is superior if the participant is trying to remember studied items that were semantically encoded compared to items that were non-semantically encoded. Here, we applied subsequent memory analysis to fMRI data to understand the neural mechanisms underlying the "foil effect". Participants encoded information during deep semantic and shallow non-semantic tasks and were tested in a subsequent blocked memory task to examine how orienting retrieval towards different types of information influences the incidental encoding of new words presented as foils during the memory test phase. To assess memory for foils, participants performed a further surprise old/new recognition test involving foil words that were encountered during the previous memory test blocks as well as completely new words. Subsequent memory effects, distinguishing successful versus unsuccessful incidental encoding of foils, were observed in regions that included the left inferior frontal gyrus and posterior parietal cortex. The left inferior frontal gyrus exhibited disproportionately larger subsequent memory effects for semantic than non-semantic foils, and significant overlap in activity during semantic, but not non-semantic, initial encoding and foil encoding. The results suggest that orienting retrieval towards different types of foils involves re-implementing the neurocognitive processes that were involved during initial encoding. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  12. Retrieval Practice Enhances the Accessibility but not the Quality of Memory

    Sutterer, David W.; Awh, Edward

    2016-01-01

    Numerous studies have demonstrated that retrieval from long term memory (LTM) can enhance subsequent memory performance, a phenomenon labeled the retrieval practice effect. However, the almost exclusive reliance on categorical stimuli in this literature leaves open a basic question about the nature of this improvement in memory performance. It has not yet been determined whether retrieval practice improves the probability of successful memory retrieval or the quality of the retrieved represen...

  13. "Forget to whom you have told this proverb": directed forgetting of destination memory in Alzheimer's disease.

    El Haj, Mohamad; Gandolphe, Marie-Charlotte; Allain, Philippe; Fasotti, Luciano; Antoine, Pascal

    2015-01-01

    Destination memory is the ability to remember the receiver of transmitted information. By means of a destination memory directed forgetting task, we investigated whether participants with Alzheimer's Disease (AD) were able to suppress irrelevant information in destination memory. Twenty-six AD participants and 30 healthy elderly subjects were asked to tell 10 different proverbs to 10 different celebrities (List 1). Afterwards, half of the participants were instructed to forget the destinations (i.e., the celebrities) whereas the other half were asked to keep them in mind. After telling 10 other proverbs to 10 other celebrities (List 2), participants were asked to read numbers aloud. Subsequently, all the participants were asked to remember the destinations of List 1 and List 2, regardless of the forget or remember instructions. The results show similar destination memory in AD participants who were asked to forget the destinations of List 1 and those who were asked to retain them. These findings are attributed to inhibitory deficits, by which AD participants have difficulties to suppress irrelevant information in destination memory.

  14. Development of measurement system for radiation effect on static random access memory based field programmable gate array

    Yao Zhibin; He Baoping; Zhang Fengqi; Guo Hongxia; Luo Yinhong; Wang Yuanming; Zhang Keying

    2009-01-01

    Based on the detailed investigation in field programmable gate array(FPGA) radiation effects theory, a measurement system for radiation effects on static random access memory(SRAM)-based FPGA was developed. The testing principle of internal memory, function and power current was introduced. The hardware and software implement means of system were presented. Some important parameters for radiation effects on SRAM-based FPGA, such as configuration RAM upset section, block RAM upset section, function fault section and single event latchup section can be gained with this system. The transmission distance of the system can be over 50 m and the maximum number of tested gates can reach one million. (authors)

  15. Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

    Yang, Xiang; Lu, Yang; Lee, Jongho; Chen, I.-Wei

    2016-01-01

    Tuning low resistance state is crucial for resistance random access memory (RRAM) that aims to achieve optimal read margin and design flexibility. By back-to-back stacking two nanometallic bipolar RRAMs with different thickness into a complementary structure, we have found that its low resistance can be reliably tuned over several orders of magnitude. Such high tunability originates from the exponential thickness dependence of the high resistance state of nanometallic RRAM, in which electron wave localization in a random network gives rise to the unique scaling behavior. The complementary nanometallic RRAM provides electroforming-free, multi-resistance-state, sub-100 ns switching capability with advantageous characteristics for memory arrays.

  16. Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

    Yang, Xiang; Lu, Yang; Lee, Jongho; Chen, I-Wei

    2016-01-01

    Tuning low resistance state is crucial for resistance random access memory (RRAM) that aims to achieve optimal read margin and design flexibility. By back-to-back stacking two nanometallic bipolar RRAMs with different thickness into a complementary structure, we have found that its low resistance can be reliably tuned over several orders of magnitude. Such high tunability originates from the exponential thickness dependence of the high resistance state of nanometallic RRAM, in which electron wave localization in a random network gives rise to the unique scaling behavior. The complementary nanometallic RRAM provides electroforming-free, multi-resistance-state, sub-100 ns switching capability with advantageous characteristics for memory arrays

  17. Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

    Xiao Yao; Guo Hong-Xia; Zhang Feng-Qi; Zhao Wen; Wang Yan-Ping; Zhang Ke-Ying; Ding Li-Li; Luo Yin-Hong; Wang Yuan-Ming; Fan Xue

    2014-01-01

    Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. (interdisciplinary physics and related areas of science and technology)

  18. Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

    Shima, Hisashi; Nakano, Takashi; Akinaga, Hiro

    2010-05-01

    The thermal stability of the resistance random access memory material in the reducing atmosphere at the elevated temperature was improved by the addition of Ti. The unipolar resistance switching before and after the postdeposition annealing (PDA) process at 400 °C was confirmed in Pt/CoO/Ti(5 nm)/Pt device, while the severe degradation of the initial resistance occurs in the Pt/CoO/Pt and Pt/CoO/Ti(50 nm)/Pt devices. By investigating the chemical bonding states of Co, O, and Ti using electron energy loss spectroscopy combined with transmission electron microscopy, it was revealed that excess Ti induces the formation of metallic Co, while the thermal stability was improved by trace Ti. Moreover, it was indicated that the filamentary conduction path can be thermally induced after PDA in the oxide layer by analyzing electrical properties of the degraded devices. The adjustment of the reducing elements is quite essential in order to participate in their profits.

  19. A Collective Study on Modeling and Simulation of Resistive Random Access Memory

    Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen

    2018-01-01

    In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across devices. This review provides detailed information regarding the various physical methodologies considered for developing models for RRAM devices. It covers all the important models reported till now and elucidates their features and limitations. Various additional effects and anomalies arising from memristive system have been addressed, and the solutions provided by the models to these problems have been shown as well. All the fundamental concepts of RRAM model development such as device operation, switching dynamics, and current-voltage relationships are covered in detail in this work. Popular models proposed by Chua, HP Labs, Yakopcic, TEAM, Stanford/ASU, Ielmini, Berco-Tseng, and many others have been compared and analyzed extensively on various parameters. The working and implementations of the window functions like Joglekar, Biolek, Prodromakis, etc. has been presented and compared as well. New well-defined modeling concepts have been discussed which increase the applicability and accuracy of the models. The use of these concepts brings forth several improvements in the existing models, which have been enumerated in this work. Following the template presented, highly accurate models would be developed which will vastly help future model developers and the modeling community.

  20. DESIGN AND ANALYSIS OF STATIC RANDOM ACCESS MEMORY BY SCHMITT TRIGGER TOPOLOGY FOR LOW VOLTAGE APPLICATIONS

    RUKKUMANI V.

    2016-12-01

    Full Text Available Aggressive scaling of transistor dimensions with each technology generation has resulted an increased integration density and improved device performance at the expense of increased leakage current. The Supply voltage scaling is an effective way of reducing dynamic as well as leakage power consumption. However the sensitivity of the circuit parameters increases with reduction of the supply voltage. SRAM bit- cells utilizing minimum sized transistors are susceptible to various random process variations. The Schmitt Trigger based operation gives better readconstancy as well as superior write-ability compared to the standard bitcell configurations. The proposed Schmitt Trigger based bitcells integrate a built-in feedback mechanism make the process with high tolerance. In this paper an obsolete design of a differential sensing Static Random Access Memory (SRAM bit cells for ultralow-power and ultralow-area Schmitt trigger operation is introduced. The ST bit cells incorporate a built-in feedback mechanism, provided by separate control signal if the feedback is given by the internal nodes, achieving process variation tolerance that must be used for future nano-scaled technology nodes. In this we proposed 32nm technology for designing 10T SRAM cell using Microwind.Total power about 30% is reduced due to 32 nm technology as compared to 65 nm technlology.

  1. Full-switching FSF-type superconducting spin-triplet magnetic random access memory element

    Lenk, D.; Morari, R.; Zdravkov, V. I.; Ullrich, A.; Khaydukov, Yu.; Obermeier, G.; Müller, C.; Sidorenko, A. S.; von Nidda, H.-A. Krug; Horn, S.; Tagirov, L. R.; Tidecks, R.

    2017-11-01

    In the present work a superconducting Co/CoOx/Cu41Ni59 /Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field applied parallel to the film plane. In more detail, around zero applied field, Tc is lower when the field is changed from negative to positive polarity (with respect to the cooling field), compared to the opposite case. We interpret this finding as the result of the generation of the odd-in-frequency triplet component of superconductivity arising at noncollinear orientation of the magnetizations in the Cu41Ni59 layer adjacent to the CoOx layer. This interpretation is supported by superconducting quantum interference device magnetometry, which revealed a correlation between details of the magnetic structure and the observed superconducting spin-valve effects. Readout of information is possible at zero applied field and, thus, no permanent field is required to stabilize both states. Consequently, this system represents a superconducting magnetic random access memory element for superconducting electronics. By applying increased transport currents, the system can be driven to the full switching mode between the completely superconducting and the normal state.

  2. The neural substrates of memory suppression: a FMRI exploration of directed forgetting.

    Bastin, Christine; Feyers, Dorothée; Majerus, Steve; Balteau, Evelyne; Degueldre, Christian; Luxen, André; Maquet, Pierre; Salmon, Eric; Collette, Fabienne

    2012-01-01

    The directed forgetting paradigm is frequently used to determine the ability to voluntarily suppress information. However, little is known about brain areas associated with information to forget. The present study used functional magnetic resonance imaging to determine brain activity during the encoding and retrieval phases of an item-method directed forgetting recognition task with neutral verbal material in order to apprehend all processing stages that information to forget and to remember undergoes. We hypothesized that regions supporting few selective processes, namely recollection and familiarity memory processes, working memory, inhibitory and selection processes should be differentially activated during the processing of to-be-remembered and to-be-forgotten items. Successful encoding and retrieval of items to remember engaged the entorhinal cortex, the hippocampus, the anterior medial prefrontal cortex, the left inferior parietal cortex, the posterior cingulate cortex and the precuneus; this set of regions is well known to support deep and associative encoding and retrieval processes in episodic memory. For items to forget, encoding was associated with higher activation in the right middle frontal and posterior parietal cortex, regions known to intervene in attentional control. Items to forget but nevertheless correctly recognized at retrieval yielded activation in the dorsomedial thalamus, associated with familiarity-based memory processes and in the posterior intraparietal sulcus and the anterior cingulate cortex, involved in attentional processes.

  3. The neural substrates of memory suppression: a FMRI exploration of directed forgetting.

    Christine Bastin

    Full Text Available The directed forgetting paradigm is frequently used to determine the ability to voluntarily suppress information. However, little is known about brain areas associated with information to forget. The present study used functional magnetic resonance imaging to determine brain activity during the encoding and retrieval phases of an item-method directed forgetting recognition task with neutral verbal material in order to apprehend all processing stages that information to forget and to remember undergoes. We hypothesized that regions supporting few selective processes, namely recollection and familiarity memory processes, working memory, inhibitory and selection processes should be differentially activated during the processing of to-be-remembered and to-be-forgotten items. Successful encoding and retrieval of items to remember engaged the entorhinal cortex, the hippocampus, the anterior medial prefrontal cortex, the left inferior parietal cortex, the posterior cingulate cortex and the precuneus; this set of regions is well known to support deep and associative encoding and retrieval processes in episodic memory. For items to forget, encoding was associated with higher activation in the right middle frontal and posterior parietal cortex, regions known to intervene in attentional control. Items to forget but nevertheless correctly recognized at retrieval yielded activation in the dorsomedial thalamus, associated with familiarity-based memory processes and in the posterior intraparietal sulcus and the anterior cingulate cortex, involved in attentional processes.

  4. A direct comparison of short-term audiomotor and visuomotor memory.

    Ward, Amanda M; Loucks, Torrey M; Ofori, Edward; Sosnoff, Jacob J

    2014-04-01

    Audiomotor and visuomotor short-term memory are required for an important variety of skilled movements but have not been compared in a direct manner previously. Audiomotor memory capacity might be greater to accommodate auditory goals that are less directly related to movement outcome than for visually guided tasks. Subjects produced continuous isometric force with the right index finger under auditory and visual feedback. During the first 10 s of each trial, subjects received continuous auditory or visual feedback. For the following 15 s, feedback was removed but the force had to be maintained accurately. An internal effort condition was included to test memory capacity in the same manner but without external feedback. Similar decay times of ~5-6 s were found for vision and audition but the decay time for internal effort was ~4 s. External feedback thus provides an advantage in maintaining a force level after feedback removal, but may not exclude some contribution from a sense of effort. Short-term memory capacity appears longer than certain previous reports but there may not be strong distinctions in capacity across different sensory modalities, at least for isometric force.

  5. The RNA Exosome Channeling and Direct Access Conformations Have Distinct In Vivo Functions

    Jaeil Han

    2016-09-01

    Full Text Available The RNA exosome is a 3′–5′ ribonuclease complex that is composed of nine core subunits and an essential catalytic subunit, Rrp44. Two distinct conformations of Rrp44 were revealed in previous structural studies, suggesting that Rrp44 may change its conformation to exert its function. In the channeling conformation, (Rrp44ch, RNA accesses the active site after traversing the central channel of the RNA exosome, whereas in the other conformation, (Rrp44da, RNA gains direct access to the active site. Here, we show that the Rrp44da exosome is important for nuclear function of the RNA exosome. Defects caused by disrupting the direct access conformation are distinct from those caused by channel-occluding mutations, indicating specific functions for each conformation. Our genetic analyses provide in vivo evidence that the RNA exosome employs a direct-access route to recruit specific substrates, indicating that the RNA exosome uses alternative conformations to act on different RNA substrates.

  6. Difference in Subjective Accessibility of On Demand Recall of Visual, Taste, and Olfactory Memories

    Petr Zach

    2018-01-01

    Full Text Available We present here significant difference in the evocation capability between sensory memories (visual, taste, and olfactory throughout certain categories of the population. As object for this memory recall we selected French fries that are simple and generally known. From daily life we may intuitively feel that there is much better recall of the visual and auditory memory compared to the taste and olfactory ones. Our results in young (age 12–21 years mostly females and some males show low capacity for smell and taste memory recall compared to far greater visual memory recall. This situation raises question whether we could train smell and taste memory recall so that it could become similar to visual or auditory ones. In our article we design technique of the volunteers training that could potentially lead to an increase in the capacity of their taste and olfactory memory recollection.

  7. Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

    Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

    2014-10-01

    Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 105 s with a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memory margin of 8.4 × 105, and bending-fatigue-free cycles of ˜1 × 103 with a memory margin (Ion/Ioff) of 3.3 × 105.

  8. Directional Congestion and Regime Switching in a Long Memory Model for Electricity Prices

    Haldrup, Niels; Nielsen, Morten Ø.

    The functioning of electricity markets has experienced increasing complexityas a result of deregulation in recent years. Consequently this affects the multilateral price behaviour across regions with physical exchange of power. It has been documented elsewhere that features such aslong memory...... and regime switching reflecting congestion and non-congestion periods are empirically relevant and hence are features that need to be taken into account when modeling price behavior. In the present paper we further elaborate on the co-existence of long memory and regime switches by focusing on the effect...... that the direction of possible congestion episodes has on the price dynamics. Under non-congestion prices are identical. The direction of possible congestion is identified by the region with excess demand of power through the sign of price differences and hence three different states can be considered: Non...

  9. Transcranial direct current stimulation may modulate extinction memory in posttraumatic stress disorder

    van?t Wout, Mascha; Longo, Sharon M.; Reddy, Madhavi K.; Philip, Noah S.; Bowker, Marguerite T.; Greenberg, Benjamin D.

    2017-01-01

    Abstract Background Abnormalities in fear extinction and recall are core components of posttraumatic stress disorder (PTSD). Data from animal and human studies point to a role of the ventromedial prefrontal cortex (vmPFC) in extinction learning and subsequent retention of extinction memories. Given the increasing interest in developing noninvasive brain stimulation protocols for psychopathology treatment, we piloted whether transcranial direct current stimulation (tDCS) during extinction lear...

  10. Two stages of directed forgetting: Electrophysiological evidence from a short-term memory task.

    Gao, Heming; Cao, Bihua; Qi, Mingming; Wang, Jing; Zhang, Qi; Li, Fuhong

    2016-06-01

    In this study, a short-term memory test was used to investigate the temporal course and neural mechanism of directed forgetting under different memory loads. Within each trial, two memory items with high or low load were presented sequentially, followed by a cue indicating whether the presented items should be remembered. After an interval, subjects were asked to respond to the probe stimuli. The ERPs locked to the cues showed that (a) the effect of cue type was initially observed during the P2 (160-240 ms) time window, with more positive ERPs for remembering relative to forgetting cues; (b) load effects were observed during the N2-P3 (250-500 ms) time window, with more positive ERPs for the high-load than low-load condition; (c) the cue effect was also observed during the N2-P3 time window, with more negative ERPs for forgetting versus remembering cues. These results demonstrated that directed forgetting involves two stages: task-relevance identification and information discarding. The cue effects during the N2 epoch supported the view that directed forgetting is an active process. © 2016 Society for Psychophysiological Research.

  11. Encoding and retrieval processes involved in the access of source information in the absence of item memory.

    Ball, B Hunter; DeWitt, Michael R; Knight, Justin B; Hicks, Jason L

    2014-09-01

    The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were related to the target item but never actually studied. In Experiments 1 and 2, participants studied 1 category member (e.g., onion) from a variety of different categories and at test were presented with an unstudied category label (e.g., vegetable) to probe memory for item and source information. In Experiments 3 and 4, 1 member of unidirectional (e.g., credit or card) or bidirectional (e.g., salt or pepper) associates was studied, whereas the other unstudied member served as a test probe. When recall failed, source information was accessible only when items were processed deeply during encoding (Experiments 1 and 2) and when there was strong forward associative strength between the retrieval cue and target (Experiments 3 and 4). These findings suggest that a retrieval probe diagnostic of semantically related item information reinstantiates information bound in memory during encoding that results in reactivation of associated contextual information, contingent upon sufficient learning of the item itself and the association between the item and its context information.

  12. Resistive Random Access Memory from Materials Development fnd Engineering to Novel Encryption and Neuromorphic Applications

    Beckmann, Karsten

    Resistive random access memory (ReRAM or RRAM) is a novel form of non-volatile memory that is expected to play a major role in future computing and memory solutions. It has been shown that the resistance state of ReRAM devices can be precisely tuned by modulating switching voltages, by limiting peak current, and by adjusting the switching pulse properties. This enables the realization of novel applications such as memristive neuromorphic computing and neural network computing. I have developed two processes based on 100 and 300mm wafer platforms to demonstrate functional HfO2 based ReRAM devices. The first process is designed for a rapid materials engineering and device characterization, while the second is an advanced hybrid ReRAM/CMOS combination based on the IBM 65nm 10LPe process technology. The 100mm wafer efforts were used to show impacts of etch processes on ReRAM switching performance and the need for a rigorous structural evaluation of ReRAM devices before starting materials development. After an etch development, a bottom electrode comparison between the inert materials Pt, Ru and W was performed where Ru showed superior results with respect to yield and resilience against environmental impacts such as humidity over a 2-month period. A comparison of amorphous and crystalline devices showed no statistical difference in the performance with respect to random telegraph noise. This demonstrates, that the forming process fundamentally alters the crystallographic structure within and around the filament. The 300mm wafer development efforts were aimed towards implementing ReRAM in the FEOL, combined with CMOS, to yield a seamless process flow of 1 transistor 1 ReRAM structures (1T1R). This technology was customized with custom-developed tungsten metal 1 (M1) and dual tungsten/copper via 1 (V1) structures, within which the ReRAM stack is embedded. The ReRAM itself consists of an inert W bottom electrode, HfO2 based active switching layer, a Ti oxygen scavenger

  13. Difference in Subjective Accessibility of On Demand Recall of Visual, Taste, and Olfactory Memories

    Zach, Petr; Zimmelová, Petra; Mrzílková, Jana; Kutová, Martina

    2018-01-01

    We present here significant difference in the evocation capability between sensory memories (visual, taste, and olfactory) throughout certain categories of the population. As object for this memory recall we selected French fries that are simple and generally known. From daily life we may intuitively feel that there is much better recall of the visual and auditory memory compared to the taste and olfactory ones. Our results in young (age 12–21 years) mostly females and some males show low cap...

  14. ViSA: a neurodynamic model for visuo-spatial working memory, attentional blink, and conscious access.

    Simione, Luca; Raffone, Antonino; Wolters, Gezinus; Salmas, Paola; Nakatani, Chie; Belardinelli, Marta Olivetti; van Leeuwen, Cees

    2012-10-01

    Two separate lines of study have clarified the role of selectivity in conscious access to visual information. Both involve presenting multiple targets and distracters: one simultaneously in a spatially distributed fashion, the other sequentially at a single location. To understand their findings in a unified framework, we propose a neurodynamic model for Visual Selection and Awareness (ViSA). ViSA supports the view that neural representations for conscious access and visuo-spatial working memory are globally distributed and are based on recurrent interactions between perceptual and access control processors. Its flexible global workspace mechanisms enable a unitary account of a broad range of effects: It accounts for the limited storage capacity of visuo-spatial working memory, attentional cueing, and efficient selection with multi-object displays, as well as for the attentional blink and associated sparing and masking effects. In particular, the speed of consolidation for storage in visuo-spatial working memory in ViSA is not fixed but depends adaptively on the input and recurrent signaling. Slowing down of consolidation due to weak bottom-up and recurrent input as a result of brief presentation and masking leads to the attentional blink. Thus, ViSA goes beyond earlier 2-stage and neuronal global workspace accounts of conscious processing limitations. PsycINFO Database Record (c) 2012 APA, all rights reserved.

  15. Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

    Austin Deschenes

    2016-11-01

    Full Text Available Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM. Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ, most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

  16. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

    2016-01-01

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  17. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    Barangi, Mahmood, E-mail: barangi@umich.edu; Erementchouk, Mikhail; Mazumder, Pinaki [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2121 (United States)

    2016-08-21

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  18. Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator

    Nishikata, Daisuke; Ali, Mohammad Alimudin Bin Mohd; Hosoda, Kento; Matsumoto, Hiroshi; Nakamura, Kazuyuki

    2018-04-01

    A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors.

  19. Working Memory Capacity: Attention Control, Secondary Memory, or Both? A Direct Test of the Dual-Component Model

    Unsworth, Nash; Spillers, Gregory J.

    2010-01-01

    The current study examined the extent to which attention control abilities, secondary memory abilities, or both accounted for variation in working memory capacity (WMC) and its relation to fluid intelligence. Participants performed various attention control, secondary memory, WMC, and fluid intelligence measures. Confirmatory factor analyses…

  20. A Direct Test of the Differentiation Mechanism: REM, BCDMEM, and the Strength-Based Mirror Effect in Recognition Memory

    Starns, Jeffrey J.; White, Corey N.; Ratcliff, Roger

    2010-01-01

    We explore competing explanations for the reduction in false alarm rate observed when studied items are strengthened. Some models, such as Retrieving Effectively from Memory (REM; Shiffrin & Steyvers, 1997), attribute the false alarm rate reduction to differentiation, a process in which strengthening memory traces at study directly reduces the…

  1. Memory for serial order across domains: An overview of the literature and directions for future research.

    Hurlstone, Mark J; Hitch, Graham J; Baddeley, Alan D

    2014-03-01

    From vocabulary learning to imitating sequences of motor actions, the ability to plan, represent, and recall a novel sequence of items in the correct order is fundamental for many verbal and nonverbal higher level cognitive activities. Here we review phenomena of serial order documented across the verbal, visual, and spatial short-term memory domains and interpret them with reference to the principles of serial order and ancillary assumptions instantiated in contemporary computational theories of memory for serial order. We propose that functional similarities across domains buttress the notion that verbal, visual, and spatial sequences are planned and controlled by a competitive queuing (CQ) mechanism in which items are simultaneously active in parallel and the strongest item is chosen for output. Within the verbal short-term memory CQ system, evidence suggests that serial order is represented via a primacy gradient, position marking, response suppression, and cumulative matching. Evidence further indicates that output interference operates during recall and that item similarity effects manifest during both serial order encoding and retrieval. By contrast, the principles underlying the representation of serial order in the visual and spatial CQ systems are unclear, largely because the relevant studies have yet to be performed. In the spatial domain, there is some evidence for a primacy gradient and position marking, whereas in the visual domain there is no direct evidence for either of the principles of serial order. We conclude by proposing some directions for future research designed to bridge this and other theoretical gaps in the literature.

  2. Contexts and Control Operations Used in Accessing List-Specific, Generalized, and Semantic Memories

    Humphreys, Michael S.; Murray, Krista L.; Maguire, Angela M.

    2009-01-01

    The human ability to focus memory retrieval operations on a particular list, episode or memory structure has not been fully appreciated or documented. In Experiment 1-3, we make it increasingly difficult for participants to switch between a less recent list (multiple study opportunities), and a more recent list (single study opportunity). Task…

  3. Retrieval practice enhances the accessibility but not the quality of memory.

    Sutterer, David W; Awh, Edward

    2016-06-01

    Numerous studies have demonstrated that retrieval from long-term memory (LTM) can enhance subsequent memory performance, a phenomenon labeled the retrieval practice effect. However, the almost exclusive reliance on categorical stimuli in this literature leaves open a basic question about the nature of this improvement in memory performance. It has not yet been determined whether retrieval practice improves the probability of successful memory retrieval or the quality of the retrieved representation. To answer this question, we conducted three experiments using a mixture modeling approach (Zhang & Luck, 2008) that provides a measure of both the probability of recall and the quality of the recalled memories. Subjects attempted to memorize the color of 400 unique shapes. After every 10 images were presented, subjects either recalled the last 10 colors (the retrieval practice condition) by clicking on a color wheel with each shape as a retrieval cue or they participated in a control condition that involved no further presentations (Experiment 1) or restudy of the 10 shape/color associations (Experiments 2 and 3). Performance in a subsequent delayed recall test revealed a robust retrieval practice effect. Subjects recalled a significantly higher proportion of items that they had previously retrieved relative to items that were untested or that they had restudied. Interestingly, retrieval practice did not elicit any improvement in the precision of the retrieved memories. The same empirical pattern also was observed following delays of greater than 24 hours. Thus, retrieval practice increases the probability of successful memory retrieval but does not improve memory quality.

  4. Transcranial direct current stimulation over the parietal cortex alters bias in item and source memory tasks.

    Pergolizzi, Denise; Chua, Elizabeth F

    2016-10-01

    Neuroimaging data have shown that activity in the lateral posterior parietal cortex (PPC) correlates with item recognition and source recollection, but there is considerable debate about its specific contributions. Performance on both item and source memory tasks were compared between participants who were given bilateral transcranial direct current stimulation (tDCS) over the parietal cortex to those given prefrontal or sham tDCS. The parietal tDCS group, but not the prefrontal group, showed decreased false recognition, and less bias in item and source discrimination tasks compared to sham stimulation. These results are consistent with a causal role of the PPC in item and source memory retrieval, likely based on attentional and decision-making biases. Copyright © 2016 Elsevier Inc. All rights reserved.

  5. Source coherence impairments in a direct detection direct sequence optical code-division multiple-access system.

    Fsaifes, Ihsan; Lepers, Catherine; Lourdiane, Mounia; Gallion, Philippe; Beugin, Vincent; Guignard, Philippe

    2007-02-01

    We demonstrate that direct sequence optical code- division multiple-access (DS-OCDMA) encoders and decoders using sampled fiber Bragg gratings (S-FBGs) behave as multipath interferometers. In that case, chip pulses of the prime sequence codes generated by spreading in time-coherent data pulses can result from multiple reflections in the interferometers that can superimpose within a chip time duration. We show that the autocorrelation function has to be considered as the sum of complex amplitudes of the combined chip as the laser source coherence time is much greater than the integration time of the photodetector. To reduce the sensitivity of the DS-OCDMA system to the coherence time of the laser source, we analyze the use of sparse and nonperiodic quadratic congruence and extended quadratic congruence codes.

  6. Source coherence impairments in a direct detection direct sequence optical code-division multiple-access system

    Fsaifes, Ihsan; Lepers, Catherine; Lourdiane, Mounia; Gallion, Philippe; Beugin, Vincent; Guignard, Philippe

    2007-02-01

    We demonstrate that direct sequence optical code- division multiple-access (DS-OCDMA) encoders and decoders using sampled fiber Bragg gratings (S-FBGs) behave as multipath interferometers. In that case, chip pulses of the prime sequence codes generated by spreading in time-coherent data pulses can result from multiple reflections in the interferometers that can superimpose within a chip time duration. We show that the autocorrelation function has to be considered as the sum of complex amplitudes of the combined chip as the laser source coherence time is much greater than the integration time of the photodetector. To reduce the sensitivity of the DS-OCDMA system to the coherence time of the laser source, we analyze the use of sparse and nonperiodic quadratic congruence and extended quadratic congruence codes.

  7. Unilateral prefrontal direct current stimulation effects are modulated by working memory load and gender.

    Meiron, Oded; Lavidor, Michal

    2013-05-01

    Recent studies revealed that anodal transcranial direct current stimulation (tDCS) to the left dorsolateral prefrontal cortex (DLPFC) may improve verbal working memory (WM) performance in humans. In the present study, we evaluated executive attention, which is the core of WM capacity, considered to be significantly involved in tasks that require active maintenance of memory representations in interference-rich conditions, and is highly dependent on DLPFC function. We investigated verbal WM accuracy using a WM task that is highly sensitive to executive attention function. We were interested in how verbal WM accuracy may be affected by WM load, unilateral DLPFC stimulation, and gender, as previous studies showed gender-dependent brain activation during verbal WM tasks. We utilized a modified verbal n-Back task hypothesized to increase demands on executive attention. We examined "online" WM performance while participants received transcranial direct current stimulation (tDCS), and implicit learning performance in a post-stimulation WM task. Significant lateralized "online" stimulation effects were found only in the highest WM load condition revealing that males benefit from left DLPFC stimulation, while females benefit from right DLPFC stimulation. High WM load performance in the left DLPFC stimulation was significantly related to post-stimulation recall performance. Our findings support the idea that lateralized stimulation effects in high verbal WM load may be gender-dependent. Further, our post-stimulation results support the idea that increased left hemisphere activity may be important for encoding verbal information into episodic memory as well as for facilitating retrieval of context-specific targets from semantic memory. Copyright © 2013 Elsevier Inc. All rights reserved.

  8. Conceptual elaboration versus direct lexical access in WAIS-similarities: differential effects of white-matter lesions and gray matter volumes.

    Fernaeus, Sven-Erik; Hellström, Åke

    2017-09-18

    Wechsler Adult Intelligence Scale (WAIS) subscale Similarities have been classified as a test of either verbal comprehension or of inductive reasoning. The reason may be that items divide into two categories. We tested the hypothesis of heterogeneity of items in WAIS-Similarities. Consecutive patients at a memory clinic and healthy controls participated in the study. White-matter hyperintensities (WMHs) and normalized temporal lobe volumes were measured based on Magnetic resonance Imaging (MRI), and tests of verbal memory and attention were used in addition to WAIS-Similarities to collect behavioural data. Factor analysis supported the hypothesis that two factors are involved in the performance of WAIS-similarities: (1) semiautomatic lexical access and (2) conceptual elaboration. These factors were highly correlated but provided discriminative diagnostic information: In logistic regression analyses, scores of the lexical access factor and of the conceptual elaboration factor discriminated patients with mild cognitive impairment from Alzheimer's disease patients and from healthy controls, respectively. High scores of WMH, indicating periventricular white-matter lesions, predicted factor scores of direct lexical access but not those of conceptual elaboration, which were predicted only by medial and lateral temporal lobe volumes.

  9. Solution-processed flexible NiO resistive random access memory device

    Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

    2018-04-01

    Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

  10. DATA-POOL : a direct-access data base for large-scale nuclear codes

    Yamano, Naoki; Koyama, Kinji; Naito, Yoshitaka; Minami, Kazuyoshi.

    1991-12-01

    A direct-access data base DATA-POOL has been developed for large-scale nuclear codes. The data can be stored and retrieved with specifications of simple node names, by using the DATA-POOL access package written in the FORTRAN 77 language. A management utility POOL for the DATA-POOL is also provided. A typical application of the DATA-POOL is shown to the RADHEAT-V4 code system developed for performing safety analyses of radiation shielding. Many samples and error messages are also noted to apply the DATA-POOL for the other code systems. This report is provided for a manual of DATA-POOL. (author)

  11. Effect of electrothermal annealing on the transformation behavior of TiNi shape memory alloy and two-way shape memory spring actuated by direct electrical current

    Wang, Z.G.; Zu, X.T.; Feng, X.D.; Zhu, S.; Deng, J.; Wang, L.M.

    2004-01-01

    In this work, the effect of electrothermal annealing on the transformation characterization of TiNi shape memory alloy and the electrothermal actuating characteristics of a two-way shape memory effect (TWSME) extension spring were investigated with direct electrical current. The results showed that with increasing direct electrical current density, the B2→R-phase transformation shifts to a lower temperature and R-phase→B19' shifts to a higher temperature in the cooling process. When annealing electrical current density reached 12.2 A/mm 2 , the R-phase disappeared and austenite transformed into martensite directly. The electrothermal annealing was an effective method of heat treatment in a selected part of shape memory alloy device. The electrothermal actuating characteristics of a TWSME spring showed that the time response and the maximum elongation greatly depended on the magnitude of the electrical current

  12. The influence of directed attention at encoding on source memory retrieval in the young and old: an ERP study.

    Dulas, Michael R; Duarte, Audrey

    2013-03-15

    Neuroimaging evidence suggests that older adults exhibit deficits in frontally-mediated strategic retrieval processes, such as post-retrieval monitoring. Behavioral research suggests that explicitly directing attention toward source features during encoding may improve source memory for both young and older adults and alleviate age-related source memory impairments, in part, by reducing demands on post-retrieval monitoring. We investigated this hypothesis in the present event-related potential (ERP) study. Young and older adults attended to either objects and their presented color (source) or to the object alone during study and made color source memory decisions at test. We attempted to match performance between groups by halving the memory load for older adults. Behavioral results showed that, while direction of attention to object and color improved source memory for both groups, older adults benefited less than the young. ERPs revealed that demands on late right frontal effects, indicative of post-retrieval monitoring, were similarly reduced by directed attention at encoding for both groups. However, older adults showed reduced ERP correlates of recollection (parietal old-new effect), as well as a sustained widespread negativity, potentially indicative of memory searches for perceptual details in the face of impaired recollection. These results suggest that older adults, like the young, can engage in post-retrieval monitoring when source details are difficult to recover. However, impaired recollection may underlie persistent age-related source memory deficits, even when encoding is supported via directed attention. Copyright © 2013 Elsevier B.V. All rights reserved.

  13. Executive control of stimulus-driven and goal-directed attention in visual working memory.

    Hu, Yanmei; Allen, Richard J; Baddeley, Alan D; Hitch, Graham J

    2016-10-01

    We examined the role of executive control in stimulus-driven and goal-directed attention in visual working memory using probed recall of a series of objects, a task that allows study of the dynamics of storage through analysis of serial position data. Experiment 1 examined whether executive control underlies goal-directed prioritization of certain items within the sequence. Instructing participants to prioritize either the first or final item resulted in improved recall for these items, and an increase in concurrent task difficulty reduced or abolished these gains, consistent with their dependence on executive control. Experiment 2 examined whether executive control is also involved in the disruption caused by a post-series visual distractor (suffix). A demanding concurrent task disrupted memory for all items except the most recent, whereas a suffix disrupted only the most recent items. There was no interaction when concurrent load and suffix were combined, suggesting that deploying selective attention to ignore the distractor did not draw upon executive resources. A final experiment replicated the independent interfering effects of suffix and concurrent load while ruling out possible artifacts. We discuss the results in terms of a domain-general episodic buffer in which information is retained in a transient, limited capacity privileged state, influenced by both stimulus-driven and goal-directed processes. The privileged state contains the most recent environmental input together with goal-relevant representations being actively maintained using executive resources.

  14. How memory of direct animal interactions can lead to territorial pattern formation.

    Potts, Jonathan R; Lewis, Mark A

    2016-05-01

    Mechanistic home range analysis (MHRA) is a highly effective tool for understanding spacing patterns of animal populations. It has hitherto focused on populations where animals defend their territories by communicating indirectly, e.g. via scent marks. However, many animal populations defend their territories using direct interactions, such as ritualized aggression. To enable application of MHRA to such populations, we construct a model of direct territorial interactions, using linear stability analysis and energy methods to understand when territorial patterns may form. We show that spatial memory of past interactions is vital for pattern formation, as is memory of 'safe' places, where the animal has visited but not suffered recent territorial encounters. Additionally, the spatial range over which animals make decisions to move is key to understanding the size and shape of their resulting territories. Analysis using energy methods, on a simplified version of our system, shows that stability in the nonlinear system corresponds well to predictions of linear analysis. We also uncover a hysteresis in the process of territory formation, so that formation may depend crucially on initial space-use. Our analysis, in one dimension and two dimensions, provides mathematical groundwork required for extending MHRA to situations where territories are defended by direct encounters. © 2016 The Author(s).

  15. Accelerating Memory-Access-Limited HPC Applications via Novel Fast Data Compression, Phase II

    National Aeronautics and Space Administration — A fast-paced continual increase on the ratio of CPU to memory speed feeds an exponentially growing limitation for extracting performance from HPC systems. Breaking...

  16. Accelerating Memory-Access-Limited HPC Applications via Novel Fast Data Compression, Phase I

    National Aeronautics and Space Administration — A fast-paced continual increase on the ratio of CPU to memory speed feeds an exponentially growing limitation for extracting performance from HPC systems. Ongoing...

  17. Beyond accessibility? Toward an on-line and memory-based model of framing effects

    Matthes, Jörg

    2007-01-01

    This theoretical article investigates the effects of media frames on individuals' judgments. In contrast to previous theorizing, we suggest that framing scholars should embrace both, on-line and memory-based judgment formation processes. Based on that premise, we propose a model that distinguishes between two phases of framing effects. Along the first phase, the media's framing contributes to the formation of an on-line or a memory-based judgment. The second phase describes six hypothetical r...

  18. No Effect of Cathodal Transcranial Direct Current Stimulation on Fear Memory in Healthy Human Subjects

    Aditya Mungee

    2016-11-01

    Full Text Available Background: Studies have demonstrated that fear memories can be modified using non-invasive methods. Recently, we demonstrated that anodal transcranial direct current stimulation (tDCS of the right dorsolateral prefrontal cortex is capable of enhancing fear memories. Here, we examined the effects of cathodal tDCS of the right dorsolateral prefrontal cortex during fear reconsolidation in humans. Methods: Seventeen young, healthy subjects were randomly assigned to two groups, which underwent fear conditioning with mild electric stimuli paired with a visual stimulus. Twenty-four hours later, both groups were shown a reminder of the conditioned fearful stimulus. Shortly thereafter, they received either tDCS (right prefrontal—cathodal, left supraorbital—anodal for 20 min at 1 mA, or sham stimulation. A day later, fear responses of both groups were compared. Results: On Day 3, during fear response assessment, there were no significant differences between the tDCS and sham group (p > 0.05. Conclusion: We conclude that cathodal tDCS of the right dorsolateral prefrontal cortex (right prefrontal—cathodal, left supraorbital—anodal did not influence fear memories.

  19. Czechoslovak participation in IAEA's experiment with direct access to INIS and AGRIS data bases

    Stanik, Z.

    Since June, 1978 Czechoslovakia has been participating in the IAEA terminal network allowing direct access to INIS and AGRIS data bases. A display and a printer from Hungary and a modem of a home make were used for equipping the terminal station. The equipment has been fully proven in operation. The Building is prepared of a home terminal network connected to the IAEA computer for rapid and quality meeting the information needs of Czechoslovak users. The connection is also considered of the projected network to ESA/IRS data bases via IIASA. (Ha)

  20. Cosmic ray access to earth satellites from below-horizon directions

    Humble, J.E.; Smart, D.F.; Shea, M.A.

    1982-01-01

    The traditional description of cosmic ray access to a given point, by use of main and Stormer cut-off rigidities, is not appropriate to describe the behaviour of charged particles approaching an earth satellite from all possible directions below the optical horizon. From certain azimuths, particles of high rigidity are unable to reach the spacecraft whilst particles at lower rigidity, having smaller local radii of curvature in the geomagnetic field, can reach it. In such cases no main cut-off, in the normal sense of that term, can exist. Examples of this behaviour are shown and appropriate new cut-off definitions are provided

  1. A novel multiplexer-based structure for random access memory cell in quantum-dot cellular automata

    Naji Asfestani, Mazaher; Rasouli Heikalabad, Saeed

    2017-09-01

    Quantum-dot cellular automata (QCA) is a new technology in scale of nano and perfect replacement for CMOS circuits in the future. Memory is one of the basic components in any digital system, so designing the random access memory (RAM) with high speed and optimal in QCA is important. In this paper, by employing the structure of multiplexer, a novel RAM cell architecture is proposed. The proposed architecture is implemented without the coplanar crossover approach. The proposed architecture is simulated using the QCADesigner version 2.0.3 and QCAPro. The simulation results demonstrate that the proposed QCA RAM architecture has the best performance in terms of delay, circuit complexity, area, cell count and energy consumption in comparison with other QCA RAM architectures.

  2. Accessibility

    Brooks, Anthony Lewis

    2017-01-01

    This contribution is timely as it addresses accessibility in regards system hardware and software aligned with introduction of the Twenty-First Century Communications and Video Accessibility Act (CVAA) and adjoined game industry waiver that comes into force January 2017. This is an act created...... by the USA Federal Communications Commission (FCC) to increase the access of persons with disabilities to modern communications, and for other purposes. The act impacts advanced communications services and products including text messaging; e-mail; instant messaging; video communications; browsers; game...... platforms; and games software. However, the CVAA has no legal status in the EU. This text succinctly introduces and questions implications, impact, and wider adoption. By presenting the full CVAA and game industry waiver the text targets to motivate discussions and further publications on the subject...

  3. EntrezAJAX: direct web browser access to the Entrez Programming Utilities

    Pallen Mark J

    2010-06-01

    Full Text Available Abstract Web applications for biology and medicine often need to integrate data from Entrez services provided by the National Center for Biotechnology Information. However, direct access to Entrez from a web browser is not possible due to 'same-origin' security restrictions. The use of "Asynchronous JavaScript and XML" (AJAX to create rich, interactive web applications is now commonplace. The ability to access Entrez via AJAX would be advantageous in the creation of integrated biomedical web resources. We describe EntrezAJAX, which provides access to Entrez eUtils and is able to circumvent same-origin browser restrictions. EntrezAJAX is easily implemented by JavaScript developers and provides identical functionality as Entrez eUtils as well as enhanced functionality to ease development. We provide easy-to-understand developer examples written in JavaScript to illustrate potential uses of this service. For the purposes of speed, reliability and scalability, EntrezAJAX has been deployed on Google App Engine, a freely available cloud service. The EntrezAJAX webpage is located at http://entrezajax.appspot.com/

  4. Design of a memory-access controller with 3.71-times-enhanced energy efficiency for Internet-of-Things-oriented nonvolatile microcontroller unit

    Natsui, Masanori; Hanyu, Takahiro

    2018-04-01

    In realizing a nonvolatile microcontroller unit (MCU) for sensor nodes in Internet-of-Things (IoT) applications, it is important to solve the data-transfer bottleneck between the central processing unit (CPU) and the nonvolatile memory constituting the MCU. As one circuit-oriented approach to solving this problem, we propose a memory access minimization technique for magnetoresistive-random-access-memory (MRAM)-embedded nonvolatile MCUs. In addition to multiplexing and prefetching of memory access, the proposed technique realizes efficient instruction fetch by eliminating redundant memory access while considering the code length of the instruction to be fetched and the transition of the memory address to be accessed. As a result, the performance of the MCU can be improved while relaxing the performance requirement for the embedded MRAM, and compact and low-power implementation can be performed as compared with the conventional cache-based one. Through the evaluation using a system consisting of a general purpose 32-bit CPU and embedded MRAM, it is demonstrated that the proposed technique increases the peak efficiency of the system up to 3.71 times, while a 2.29-fold area reduction is achieved compared with the cache-based one.

  5. Enhanced Working Memory Binding by Direct Electrical Stimulation of the Parietal Cortex

    Agustina Birba

    2017-06-01

    Full Text Available Recent works evince the critical role of visual short-term memory (STM binding deficits as a clinical and preclinical marker of Alzheimer’s disease (AD. These studies suggest a potential role of posterior brain regions in both the neurocognitive deficits of Alzheimer’s patients and STM binding in general. Thereupon, we surmised that stimulation of the posterior parietal cortex (PPC might be a successful approach to tackle working memory deficits in this condition, especially at early stages. To date, no causal evidence exists of the role of the parietal cortex in STM binding. A unique approach to assess this issue is afforded by single-subject direct intracranial electrical stimulation of specific brain regions during a relevant cognitive task. Electrical stimulation has been used both for clinical purposes and to causally probe brain mechanisms. Previous evidence of electrical currents spreading through white matter along well defined functional circuits indicates that visual working memory mechanisms are subserved by a specific widely distributed network. Here, we stimulated the parietal cortex of a subject with intracranial electrodes as he performed the visual STM task. We compared the ensuing results to those from a non-stimulated condition and to the performance of a matched control group. In brief, direct stimulation of the parietal cortex induced a selective improvement in STM. These results, together with previous studies, provide very preliminary but promising ground to examine behavioral changes upon parietal stimulation in AD. We discuss our results regarding: (a the usefulness of the task to target prodromal stages of AD; (b the role of a posterior network in STM binding and in AD; and (c the potential opportunity to improve STM binding through brain stimulation.

  6. SuperB R&D computing program: HTTP direct access to distributed resources

    Fella, A.; Bianchi, F.; Ciaschini, V.; Corvo, M.; Delprete, D.; Diacono, D.; Di Simone, A.; Franchini, P.; Donvito, G.; Giacomini, F.; Gianoli, A.; Longo, S.; Luitz, S.; Luppi, E.; Manzali, M.; Pardi, S.; Perez, A.; Rama, M.; Russo, G.; Santeramo, B.; Stroili, R.; Tomassetti, L.

    2012-12-01

    The SuperB asymmetric energy e+e- collider and detector to be built at the newly founded Nicola Cabibbo Lab will provide a uniquely sensitive probe of New Physics in the flavor sector of the Standard Model. Studying minute effects in the heavy quark and heavy lepton sectors requires a data sample of 75 ab-1 and a luminosity target of 1036cm-2s-1. The increasing network performance also in the Wide Area Network environment and the capability to read data remotely with good efficiency are providing new possibilities and opening new scenarios in the data access field. Subjects like data access and data availability in a distributed environment are key points in the definition of the computing model for an HEP experiment like SuperB. R&D efforts in such a field have been brought on during the last year in order to release the Computing Technical Design Report within 2013. WAN direct access to data has been identified as one of the more interesting viable option; robust and reliable protocols as HTTP/WebDAV and xrootd are the subjects of a specific R&D line in a mid-term scenario. In this work we present the R&D results obtained in the study of new data access technologies for typical HEP use cases, focusing on specific protocols such as HTTP and WebDAV in Wide Area Network scenarios. Reports on efficiency, performance and reliability tests performed in a data analysis context have been described. Future R&D plan includes HTTP and xrootd protocols comparison tests, in terms of performance, efficiency, security and features available.

  7. Towards scalable parellelism in Monte Carlo particle transport codes using remote memory access

    Romano, Paul K [Los Alamos National Laboratory; Brown, Forrest B [Los Alamos National Laboratory; Forget, Benoit [MIT

    2010-01-01

    One forthcoming challenge in the area of high-performance computing is having the ability to run large-scale problems while coping with less memory per compute node. In this work, they investigate a novel data decomposition method that would allow Monte Carlo transport calculations to be performed on systems with limited memory per compute node. In this method, each compute node remotely retrieves a small set of geometry and cross-section data as needed and remotely accumulates local tallies when crossing the boundary of the local spatial domain. initial results demonstrate that while the method does allow large problems to be run in a memory-limited environment, achieving scalability may be difficult due to inefficiencies in the current implementation of RMA operations.

  8. Towards scalable parallelism in Monte Carlo particle transport codes using remote memory access

    Romano, Paul K.; Forget, Benoit; Brown, Forrest

    2010-01-01

    One forthcoming challenge in the area of high-performance computing is having the ability to run large-scale problems while coping with less memory per compute node. In this work, we investigate a novel data decomposition method that would allow Monte Carlo transport calculations to be performed on systems with limited memory per compute node. In this method, each compute node remotely retrieves a small set of geometry and cross-section data as needed and remotely accumulates local tallies when crossing the boundary of the local spatial domain. Initial results demonstrate that while the method does allow large problems to be run in a memory-limited environment, achieving scalability may be difficult due to inefficiencies in the current implementation of RMA operations. (author)

  9. 75 FR 55764 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Preliminary Results of...

    2010-09-14

    ... Kuhbach, Director, Office 1, ``Sixth Countervailing Duty Administrative Review: Dynamic Random Access... ``Purchases at Prices that Constitute `More than Adequate Remuneration,' '' (``Uranium from France'') (citing...

  10. Evaluation of an intervention directed at the modification of memory beliefs in older adults

    Schmidt, I.W.; Zwart, J.F; Berg, I.J; Deelman, B.G.

    In clinical practice, memory interventions often aim to improve negative beliefs and expectations about memory in the elderly. The (implicit or explicit) assumption is often that changing beliefs and expectations about memory does not only improve subjective memory judgments, but leads to improved

  11. The Development of Memory Efficiency and Value-Directed Remembering across the Life Span: A Cross-Sectional Study of Memory and Selectivity

    Castel, Alan D.; Humphreys, Kathryn L.; Lee, Steve S.; Galvan, Adriana; Balota, David A.; McCabe, David P.

    2011-01-01

    Although attentional control and memory change considerably across the life span, no research has examined how the ability to strategically remember important information (i.e., value-directed remembering) changes from childhood to old age. The present study examined this in different age groups across the life span (N = 320, 5-96 years old). A…

  12. The effect of left frontal transcranial direct-current stimulation on propranolol-induced fear memory acquisition and consolidation deficits.

    Nasehi, Mohammad; Khani-Abyaneh, Mozhgan; Ebrahimi-Ghiri, Mohaddeseh; Zarrindast, Mohammad-Reza

    2017-07-28

    Accumulating evidence supports the efficacy of transcranial direct current stimulation (tDCS) in modulating numerous cognitive functions. Despite the fact that tDCS has been used for the enhancement of memory and cognition, very few animal studies have addressed its impact on the modulation of fear memory. This study was designed to determine whether pre/post-training frontal tDCS application would alter fear memory acquisition and/or consolidation deficits induced by propranolol in NMRI mice. Results indicated that administration of β1-adrenoceptor blocker propranolol (0.1mg/kg) impaired fear memory retrieval. Pre/post-training application of anodal tDCS when propranolol was administered prior to training reversed contextual memory retrieval whereas only the anodal application prior to training could induce the same result in the auditory test. Meanwhile, anodal stimulation had no effect on fear memories by itself. Moreover, regardless of when cathode was applied and propranolol administered, their combination restored contextual memory retrieval, while only cathodal stimulation prior to training facilitated the contextual memory retrieval. Also, auditory memory retrieval was restored when cathodal stimulation and propranolol occurred prior to training but it was abolished when stimulation occurred after training and propranolol was administered prior to training. Collectively, our findings show that tDCS applied on the left frontal cortex of mice affects fear memory performance. This alteration seems to be task-dependent and varies depending on the nature and timing of the stimulation. In certain conditions, tDCS reverses the effect of propranolol. These results provide initial evidence to support the timely use of tDCS for the modulation of fear-related memories. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Cognitive Architecture for Direction of Attention Founded on Subliminal Memory Searches, Pseudorandom and Nonstop

    Burger, J. R.

    2008-01-01

    By way of explaining how a brain works logically, human associative memory is modeled with logical and memory neurons, corresponding to standard digital circuits. The resulting cognitive architecture incorporates basic psychological elements such as short term and long term memory. Novel to the architecture are memory searches using cues chosen pseudorandomly from short term memory. Recalls alternated with sensory images, many tens per second, are analyzed subliminally as an ongoing process, ...

  14. All ITO-based transparent resistive switching random access memory using oxygen doping method

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2015-01-01

    Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >10 4  s at 85 °C, with a current ratio of ∼10 2 to ∼10 3 . This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated. • All ITO-based RRAM cell is achieved using oxygen doping method. • Good endurance and long retention time were observed.

  15. Respecting Relations: Memory Access and Antecedent Retrieval in Incremental Sentence Processing

    Kush, Dave W.

    2013-01-01

    This dissertation uses the processing of anaphoric relations to probe how linguistic information is encoded in and retrieved from memory during real-time sentence comprehension. More specifically, the dissertation attempts to resolve a tension between the demands of a linguistic processor implemented in a general-purpose cognitive architecture and…

  16. Memory Retrieval Given Two Independent Cues: Cue Selection or Parallel Access?

    Rickard, Timothy C.; Bajic, Daniel

    2004-01-01

    A basic but unresolved issue in the study of memory retrieval is whether multiple independent cues can be used concurrently (i.e., in parallel) to recall a single, common response. A number of empirical results, as well as potentially applicable theories, suggest that retrieval can proceed in parallel, though Rickard (1997) set forth a model that…

  17. Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

    Rocha, P.R.F.; Gomes, H.L.; Kiazadeh, A.; Chen, Qian; Leeuw, de D.M.; Meskers, S.C.J.

    2011-01-01

    This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching

  18. Primary care direct access MRI for the investigation of chronic headache

    Taylor, T.R., E-mail: timt@nhs.net [Queens Medical Centre, Nottingham (United Kingdom); Evangelou, N. [Queens Medical Centre, Nottingham (United Kingdom); Porter, H. [Nottingham Cripps Health Centre, Nottingham (United Kingdom); Lenthall, R. [Queens Medical Centre, Nottingham (United Kingdom)

    2012-01-15

    Aim: To assess the efficacy of a primary-care imaging pathway for neurology outpatients, from inception to deployment, compared with traditional outpatient referral. Materials and methods: After local agreement, guidelines were generated providing pathways for diagnosis and treatment of common causes of headache, highlighting 'red-flag' features requiring urgent neurology referral, and selecting patients for direct magnetic resonance imaging (MRI) referral. In addition, reports were clarified and standardized. To evaluate the efficacy of the access pathway, a retrospective sequential review of 100 MRI investigations was performed comparing general practitioner (GP) referral, with traditional neurology referral plus imaging, acquired before the pathway started. Results: No statistically significant difference in rates of major abnormalities, incidental findings or ischaemic lesions were identified between the two cohorts. Reported patient satisfaction was high, with a cost reduction for groups using the pathway. Conclusion: The findings of the present study suggest that a defined access pathway for imaging to investigate chronic headache can be deployed appropriately in a primary-care setting.

  19. Limiting the access to direct-acting antivirals against HCV: an ethical dilemma.

    Gentile, Ivan; Maraolo, Alberto E; Niola, Massimo; Graziano, Vincenzo; Borgia, Guglielmo; Paternoster, Mariano

    2016-11-01

    Hepatitis C virus (HCV) infection affects about 200 million people worldwide and represents a leading cause of liver-related mortality. Eradication of HCV infection, achieved mainly through direct-acting antivirals (DAA), results in a decrease of mortality and an improvement of quality of life. These drugs have a maximal efficacy and an optimal tolerability. However, their high cost precludes a universal access even in wealthy countries. Areas covered: This article deals with the policies adopted for the use of the new anti-HCV drugs, especially in Europe and most of all in Italy, supposedly the developed country with the highest HCV prevalence. The literature search was performed using Pubmed and Web of Science. Moreover, national regulatory institutional websites were consulted. Expert commentary: The current policy of limitation to the access of the DAA presents a series of ethical issues that makes it non-applicable. A 'treat-all' strategy should resolve all ethical dilemmas, by virtue of the wide benefits of anti-HCV treatment not only for the advanced stage of infection, but also for the initial stages. A reduction in price of the drugs is the actual condition to achieve such a change.

  20. Primary care direct access MRI for the investigation of chronic headache

    Taylor, T.R.; Evangelou, N.; Porter, H.; Lenthall, R.

    2012-01-01

    Aim: To assess the efficacy of a primary-care imaging pathway for neurology outpatients, from inception to deployment, compared with traditional outpatient referral. Materials and methods: After local agreement, guidelines were generated providing pathways for diagnosis and treatment of common causes of headache, highlighting “red-flag” features requiring urgent neurology referral, and selecting patients for direct magnetic resonance imaging (MRI) referral. In addition, reports were clarified and standardized. To evaluate the efficacy of the access pathway, a retrospective sequential review of 100 MRI investigations was performed comparing general practitioner (GP) referral, with traditional neurology referral plus imaging, acquired before the pathway started. Results: No statistically significant difference in rates of major abnormalities, incidental findings or ischaemic lesions were identified between the two cohorts. Reported patient satisfaction was high, with a cost reduction for groups using the pathway. Conclusion: The findings of the present study suggest that a defined access pathway for imaging to investigate chronic headache can be deployed appropriately in a primary-care setting.

  1. Urban growth and water access in sub-Saharan Africa: Progress, challenges, and emerging research directions.

    Dos Santos, S; Adams, E A; Neville, G; Wada, Y; de Sherbinin, A; Mullin Bernhardt, E; Adamo, S B

    2017-12-31

    For the next decade, the global water crisis remains the risk of highest concern, and ranks ahead of climate change, extreme weather events, food crises and social instability. Across the globe, nearly one in ten people is without access to an improved drinking water source. Least Developed Countries (LDCs) especially in sub-Saharan Africa (SSA) are the most affected, having disproportionately more of the global population without access to clean water than other major regions. Population growth, changing lifestyles, increasing pollution and accelerating urbanization will continue to widen the gap between the demand for water and available supply especially in urban areas, and disproportionately affect informal settlements, where the majority of SSA's urban population resides. Distribution and allocation of water will be affected by climate-induced water stresses, poor institutions, ineffective governance, and weak political will to address scarcity and mediate uncertainties in future supply. While attempts have been made by many scientists to examine different dimensions of water scarcity and urban population dynamics, there are few comprehensive reviews, especially focused on the particular situation in Sub-Saharan Africa. This paper contributes to interdisciplinary understanding of urban water supply by distilling and integrating relevant empirical knowledge on urban dynamics and water issues in SSA, focusing on progress made and associated challenges. It then points out future research directions including the need to understand how alternatives to centralized water policies may help deliver sustainable water supply to cities and informal settlements in the region. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Action mechanisms of transcranial direct current stimulation in Alzheimer´s disease and memory loss

    Niels eHansen

    2012-05-01

    Full Text Available The pharmacological treatment of Alzheimer´s disease (AD is often limited and accompanied by drug side effects. Thus alternative therapeutic strategies such as non-invasive brain stimulation are needed. Few studies have demonstrated that transcranial direct current stimulation (tDCS, a method of neuromodulation with consecutive robust excitability changes within the stimulated cortex area, is beneficial in AD. There is also evidence that tDCS enhances memory function in cognitive rehabilitation in depressive patients, Parkinson´s disease and stroke. TDCS improves working and visual recognition memory in humans and object-recognition learning in the elderly. Neurobiological mechanisms of AD comprise changes in neuronal activity and the cerebral blood flow caused by altered microvasculature, synaptic dysregulation from ß-amyloid peptide accumulation, altered neuromodulation by degeneration of modulatory amine transmitter systems, altered brain oscillations, and changes in network connectivity. tDCS alters (i neuronal activity and (ii human cerebral blood flow, (iii has synaptic and non-synaptic after-effects (iv, can modify neurotransmitters polarity-dependently, (v and alter oscillatory brain activity and (vi functional connectivity patterns in the brain. It thus is reasonable to use tDCS as a therapeutic instrument in AD as it improves cognitive function in manner based on a disease mechanism. Moreover, it might prove valuable in other types of dementia. Future large-scale clinical and mechanism-oriented studies may enable to identify its therapeutic validity in other types of demential disorders.

  3. Action mechanisms of transcranial direct current stimulation in Alzheimer's disease and memory loss.

    Hansen, Niels

    2012-01-01

    The pharmacological treatment of Alzheimer's disease (AD) is often limited and accompanied by drug side effects. Thus alternative therapeutic strategies such as non-invasive brain stimulation are needed. Few studies have demonstrated that transcranial direct current stimulation (tDCS), a method of neuromodulation with consecutive robust excitability changes within the stimulated cortex area, is beneficial in AD. There is also evidence that tDCS enhances memory function in cognitive rehabilitation in depressive patients, Parkinson's disease, and stroke. tDCS improves working and visual recognition memory in humans and object-recognition learning in the elderly. AD's neurobiological mechanisms comprise changes in neuronal activity and the cerebral blood flow (CBF) caused by altered microvasculature, synaptic dysregulation from ß-amyloid peptide accumulation, altered neuromodulation via degenerated modulatory amine transmitter systems, altered brain oscillations, and changes in network connectivity. tDCS alters (i) neuronal activity and (ii) human CBF, (iii) has synaptic and non-synaptic after-effects (iv), can modify neurotransmitters polarity-dependently, (v) and alter oscillatory brain activity and (vi) functional connectivity patterns in the brain. It thus is reasonable to use tDCS as a therapeutic instrument in AD as it improves cognitive function in manner based on a disease mechanism. Moreover, it could prove valuable in other types of dementia. Future large-scale clinical and mechanism-oriented studies may enable us to identify its therapeutic validity in other types of demential disorders.

  4. Expanding the enzyme universe: accessing non-natural reactions by mechanism-guided directed evolution.

    Renata, Hans; Wang, Z Jane; Arnold, Frances H

    2015-03-09

    High selectivity and exquisite control over the outcome of reactions entice chemists to use biocatalysts in organic synthesis. However, many useful reactions are not accessible because they are not in nature's known repertoire. In this Review, we outline an evolutionary approach to engineering enzymes to catalyze reactions not found in nature. We begin with examples of how nature has discovered new catalytic functions and how such evolutionary progression has been recapitulated in the laboratory starting from extant enzymes. We then examine non-native enzyme activities that have been exploited for chemical synthesis, with an emphasis on reactions that do not have natural counterparts. Non-natural activities can be improved by directed evolution, thus mimicking the process used by nature to create new catalysts. Finally, we describe the discovery of non-native catalytic functions that may provide future opportunities for the expansion of the enzyme universe. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Consumer direct access to clinical laboratory testing: what are the critical issues?

    Wilkinson, David S; Pontius, C Anne

    2003-01-01

    Americans are demanding, independent people. In most aspects of our lives, we are used to walking into a store or other place of business with the expectation that the personnel working for the business will make every effort to satisfy our requests quickly and without the need for a third party to intervene or approve the transaction. Hence, the popularity of convenience stores, do-it-yourself stores and kits, and e-commerce. The delivery of health-care services, however, generally does not conform to this model. Before most diagnostic tests or treatments are ordered, patients usually consult a physician. In many cases, prior to tests or treatments being performed, additional consultations are required with insurance plans. But the winds of change, they are a-blowing. More and more, people demand an active role in managing their health care. One emerging trend is direct patient access to clinical laboratory testing (1).

  6. Accessing the mental space - Spatial working memory processes for language and vision overlap in precuneus

    Wallentin, Mikkel; Weed, Ethan; Østergaard, Leif

    2008-01-01

    , strikingly overlapping a network previously shown to be involved in recall of spatial aspects of images depicting similar scenarios. This supports a neurocognitive model of language function, where sentences establish meaning by interacting with the perceptual and working memory networks of the brain.......Abstract: The ‘‘overlapping systems'' theory of language function argues that linguistic meaning construction crucially relies on contextual information provided by ‘‘nonlinguistic'' cognitive systems, such as perception and memory. This study examines whether linguistic processing of spatial.......g., ‘‘Was he turned towards her?'') and equally concrete nonspatial content (e.g., ‘‘Was he older than her?''). We found that recall of the spatial content relative to the nonspatial content resulted in higher BOLD response in a dorsoposterior network of brain regions, most significantly in precuneus...

  7. Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

    Cerjan, C J

    2000-01-01

    The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

  8. Circuit-Switched Memory Access in Photonic Interconnection Networks for High-Performance Embedded Computing

    2010-07-22

    Memory Systems: Cadle. DRAM, Disk. Morgan Kaufmann , 2007. (2 1) A. Joshi, C. Ballen, Y.-J. Kwon. S . Beamcr, I. Shamim . K. Asano\\’ic, and V...COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR( S ) 5d...PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION

  9. Immigration, Language Proficiency, and Autobiographical Memories: Lifespan Distribution and Second-Language Access

    Esposito, Alena G.; Baker-Ward, Lynne

    2015-01-01

    This investigation examined two controversies in the autobiographical literature: how cross-language immigration affects the distribution of autobiographical memories across the lifespan and under what circumstances language-dependent recall is observed. Both Spanish/English bilingual immigrants and English monolingual non-immigrants participated in a cue word study, with the bilingual sample taking part in a within-subject language manipulation. The expected bump in the num...

  10. Direct observation of hierarchical nucleation of martensite and size-dependent superelasticity in shape memory alloys.

    Liu, Lifeng; Ding, Xiangdong; Li, Ju; Lookman, Turab; Sun, Jun

    2014-02-21

    Martensitic transformation usually creates hierarchical internal structures beyond mere change of the atomic crystal structure. Multi-stage nucleation is thus required, where nucleation (level-1) of the underlying atomic crystal lattice does not have to be immediately followed by the nucleation of higher-order superstructures (level-2 and above), such as polysynthetic laths. Using in situ transmission electron microscopy (TEM), we directly observe the nucleation of the level-2 superstructure in a Cu-Al-Ni single crystal under compression, with critical super-nuclei size L2c around 500 nm. When the sample size D decreases below L2c, the superelasticity behavior changes from a flat stress plateau to a continuously rising stress-strain curve. Such size dependence definitely would impact the application of shape memory alloys in miniaturized MEMS/NEMS devices.

  11. Criterial learning is not enough: Retrieval practice is necessary for improving post-stress memory accessibility.

    Smith, Amy M; Davis, F Caroline; Thomas, Ayanna K

    2018-06-01

    In a recent study, having participants make three retrieval attempts (i.e., retrieval practice) when learning information strengthened memory against the detrimental effects of psychological stress. We aimed to determine whether learning to criterion, in which only one successful retrieval attempt is made, would similarly buffer memory against stress, or whether multiple retrieval attempts are necessary to achieve that effect. In Experiment 1, participants learned to criterion and then engaged in additional restudying (CL S ) or retrieval practice (CL R ). Twenty-four hours later, stress was induced and stress-related increases in cortisol were observed. However, no differences in recall performance were observed between any of the groups. Experiment 2 was similar but introduced a 1-week delay between encoding and retrieval. Recall performance was impaired for both groups under stress, but recall for those in the CL R group was still better than either pre- or post-stress performance for those in the CL S group. Thus, criterial learning may protect memory against stress in the short-term, but additional retrieval practice is more beneficial for achieving this effect in the long-term. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

  12. On EMDR: eye movements during retrieval reduce subjective vividness and objective memory accessibility during future recall.

    van den Hout, Marcel A; Bartelski, Nicola; Engelhard, Iris M

    2013-01-01

    In eye movement desensitization and reprocessing (EMDR), a treatment for post-traumatic stress disorder (PTSD), patients make eye movements (EM) during trauma recall. Earlier experimental studies found that EM during recall reduces memory vividness during future recalls, and this was taken as laboratory support for the underlying mechanism of EMDR. However, reduced vividness was assessed with self-reports that may be affected by demand characteristics. We tested whether recall+EM also reduces memory vividness on a behavioural reaction time (RT) task. Undergraduates (N=32) encoded two pictures, recalled them, and rated their vividness. In the EM group, one of the pictures was recalled again while making EM. In the no-EM group one of the pictures was recalled without EM. Then fragments from both the recalled and non-recalled pictures, and new fragments were presented and participants rated whether these were (or were not) seen before. Both pictures were rated again for vividness. In the EM group, self-rated vividness of the recalled+EM picture decreased, relative to the non-recalled picture. In the no-EM group there was no difference between the recalled versus non-recalled picture. The RT task showed the same pattern. Reduction of memory vividness due to recall+EM is also evident from non-self-report data.

  13. The contribution to immediate serial recall of rehearsal, search speed, access to lexical memory, and phonological coding: an investigation at the construct level.

    Tehan, Gerald; Fogarty, Gerard; Ryan, Katherine

    2004-07-01

    Rehearsal speed has traditionally been seen to be the prime determinant of individual differences in memory span. Recent studies, in the main using young children as the participant population, have suggested other contributors to span performance. In the present research, we used structural equation modeling to explore, at the construct level, individual differences in immediate serial recall with respect to rehearsal, search, phonological coding, and speed of access to lexical memory. We replicated standard short-term phenomena; we showed that the variables that influence children's span performance influence adult performance in the same way; and we showed that speed of access to lexical memory and facility with phonological codes appear to be more potent sources of individual differences in immediate memory than is either rehearsal speed or search factors.

  14. Evidence for parallel consolidation of motion direction and orientation into visual short-term memory.

    Rideaux, Reuben; Apthorp, Deborah; Edwards, Mark

    2015-02-12

    Recent findings have indicated the capacity to consolidate multiple items into visual short-term memory in parallel varies as a function of the type of information. That is, while color can be consolidated in parallel, evidence suggests that orientation cannot. Here we investigated the capacity to consolidate multiple motion directions in parallel and reexamined this capacity using orientation. This was achieved by determining the shortest exposure duration necessary to consolidate a single item, then examining whether two items, presented simultaneously, could be consolidated in that time. The results show that parallel consolidation of direction and orientation information is possible, and that parallel consolidation of direction appears to be limited to two. Additionally, we demonstrate the importance of adequate separation between feature intervals used to define items when attempting to consolidate in parallel, suggesting that when multiple items are consolidated in parallel, as opposed to serially, the resolution of representations suffer. Finally, we used facilitation of spatial attention to show that the deterioration of item resolution occurs during parallel consolidation, as opposed to storage. © 2015 ARVO.

  15. Computational complexity and memory usage for multi-frontal direct solvers used in p finite element analysis

    Calo, Victor M.; Collier, Nathan; Pardo, David; Paszyński, Maciej R.

    2011-01-01

    The multi-frontal direct solver is the state of the art for the direct solution of linear systems. This paper provides computational complexity and memory usage estimates for the application of the multi-frontal direct solver algorithm on linear systems resulting from p finite elements. Specifically we provide the estimates for systems resulting from C0 polynomial spaces spanned by B-splines. The structured grid and uniform polynomial order used in isogeometric meshes simplifies the analysis.

  16. Computational complexity and memory usage for multi-frontal direct solvers used in p finite element analysis

    Calo, Victor M.

    2011-05-14

    The multi-frontal direct solver is the state of the art for the direct solution of linear systems. This paper provides computational complexity and memory usage estimates for the application of the multi-frontal direct solver algorithm on linear systems resulting from p finite elements. Specifically we provide the estimates for systems resulting from C0 polynomial spaces spanned by B-splines. The structured grid and uniform polynomial order used in isogeometric meshes simplifies the analysis.

  17. Memory

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  18. An Account of the Accessioned Specimens in the Jose Vera Santos Memorial Herbarium, University of the Philippines Diliman

    Sandra L. Yap

    2013-12-01

    Full Text Available The University of the Philippines Herbarium was established in 1908 and originally located in Ermita, Manila. The majority of its pre-war collections were destroyed during World War II, and no formal records of its specimens were preserved. Since then, multiple efforts to restore and improve the Herbarium have been proposed and implemented, most notably its move to the UP Diliman campus. In 1999, the Herbarium was off icially renamed as the Jose Vera Santos Memorial Herbarium after the noted grass expert, who initiated rehabilitation work in the Herbarium after the war. The Herbarium is registered with the international code PUH in the Index Herbariorum, a global directory of public herbaria managed by the New York Botanical Garden. To assess the accessioned (uniquely numbered and recorded collection of the Herbarium, an electronic database of its accessions was created.The Herbarium currently contains 14,648 accessions, 12,681 (86.6% of which were collected in the Philippines. This is comprised of 309 families, 1903 genera, and 4485 distinct species. Thirty-nine type specimens form part of the collection, only one of which is a holotype. On the basis of major plant groups, angiosperms make up 71% of the collection. Unsurprisingly, Family Poaceae has the largest number of specimens at 2,759 accessions. The earliest dated Philippine specimen was collected by E.D. Merrill in 1902, and roughly half of the total accessioned specimens were collected in the 1950s and 1970s. The two most prolif ic collectors were Santos and Leonardo L. Co, with 2,320 and 2,147 specimens, respectively. Luzon is the most well-represented island group with 2,752 specimens collected in Metro Manila alone. At present, PUH Curator James V. LaFrankie is working on the expansion of the collection and upgrading of the herbarium to encourage future educational and research activities.

  19. Design of shape memory alloy actuators for direct power by an automotive battery

    Leary, M.; Huang, S.; Ataalla, T.; Baxter, A.; Subic, A.

    2013-01-01

    Highlights: ► We model Ni–Ti SMA actuators directly powered by a standard automotive battery. ► Feasible permutations for direct power are identified and confirmed experimentally. ► 0.5 mm diameter SMA of 225 mm length or larger is feasible for direct power. ► The feasibility of 0.25 mm SMA is greater, although the actuation force is lower. ► Prototype actuators are developed for long-stroke and short-stroke applications. -- Abstract: Nickel–Titanium (Ni–Ti) Shape Memory Alloys (SMAs) are increasingly utilized as mechanical actuators due to high power-to-mass ratio, high fatigue life and low cost. The implementation of SMA actuators in an automotive environment is of particular interest due to the potential for lower end-user functional efforts, together with reduced component mass and cost within a limited packaging space. In applications of this kind, the actuators are powered by a standard automotive (six cell lead-acid) battery. Although resistors and electronic devices can be used to avoid overload of either the SMA or battery system, the feasibility of supplying power to the actuators directly from the battery becomes a key objective for reducing system cost and complexity. In this study, the electrical resistivity of a linear Ni–Ti SMA actuator was theoretically calculated and experimentally verified. Based on this developed knowledge, the resistance of various actuator permutations was calculated, and the feasibility of operating the actuators with a standard automotive battery was assessed. To confirm the feasibility of powering SMA actuators directly from the automotive battery, two SMA actuator concepts were developed and experimentally validated.

  20. Modulating Memory Performance in Healthy Subjects with Transcranial Direct Current Stimulation Over the Right Dorsolateral Prefrontal Cortex.

    Smirni, Daniela; Turriziani, Patrizia; Mangano, Giuseppa Renata; Cipolotti, Lisa; Oliveri, Massimiliano

    2015-01-01

    The role of the Dorsolateral Prefrontal Cortex (DLPFC) in recognition memory has been well documented in lesion, neuroimaging and repetitive Transcranial Magnetic Stimulation (rTMS) studies. The aim of the present study was to investigate the effects of transcranial Direct Current Stimulation (tDCS) over the left and the right DLPFC during the delay interval of a non-verbal recognition memory task. 36 right-handed young healthy subjects participated in the study. The experimental task was an Italian version of Recognition Memory Test for unknown faces. Study included two experiments: in a first experiment, each subject underwent one session of sham tDCS and one session of left or right cathodal tDCS; in a second experiment each subject underwent one session of sham tDCS and one session of left or right anodal tDCS. Cathodal tDCS over the right DLPFC significantly improved non verbal recognition memory performance, while cathodal tDCS over the left DLPFC had no effect. Anodal tDCS of both the left and right DLPFC did not modify non verbal recognition memory performance. Complementing the majority of previous studies, reporting long term memory facilitations following left prefrontal anodal tDCS, the present findings show that cathodal tDCS of the right DLPFC can also improve recognition memory in healthy subjects.

  1. Atomic crystals resistive switching memory

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  2. The role of sleep in declarative memory consolidation--direct evidence by intracranial EEG.

    Axmacher, N.; Haupt, S.; Fernandez, G.S.E.; Elger, C.E.; Fell, J.

    2008-01-01

    Two step theories of memory formation assume that an initial learning phase is followed by a consolidation stage. Memory consolidation has been suggested to occur predominantly during sleep. Very recent findings, however, suggest that important steps in memory consolidation occur also during waking

  3. An Account of Performance in Accessing Information Stored in Long-Term Memory. A Fixed-Links Model Approach

    Altmeyer, Michael; Schweizer, Karl; Reiss, Siegbert; Ren, Xuezhu; Schreiner, Michael

    2013-01-01

    Performance in working memory and short-term memory tasks was employed for predicting performance in a long-term memory task in order to find out about the underlying processes. The types of memory were represented by versions of the Posner Task, the Backward Counting Task and the Sternberg Task serving as measures of long-term memory, working…

  4. SierraDNA – Demonstrating the Usefulness of Direct ILS Database Access

    James Padgett

    2015-10-01

    Full Text Available Innovative Interface’s Sierra(™ Integrated Library System (ILS brings with it a Database Navigator Application (SierraDNA - in layman's terms SierraDNA gives Sierra sites read access to their ILS database. Unlike the closed use cases produced by vendor supplied APIs, which restrict Libraries to limited development opportunities, SierraDNA enables sites to publish their own APIs and scripts based upon custom SQL code to meet their own needs and those of their users and processes. In this article we give examples showing how SierraDNA can be utilized to improve Library services. We highlight three example use cases which have benefited our users, enhanced online security and improved our back office processes. In the first use case we employ user access data from our electronic resources proxy server (WAM to detect hacked user accounts. Three scripts are used in conjunction to flag user accounts which are being hijacked to systematically steal content from our electronic resource provider’s websites. In the second we utilize the reading histories of our users to augment our search experience with an Amazon style “People who borrowed this book also borrowed…these books” feature. Two scripts are used together to determine which other items were borrowed by borrowers of the item currently of interest. And lastly, we use item holds data to improve our acquisitions workflow through an automated demand based ordering process. Our explanation and SQL code should be of direct use for adoption or as examples for other Sierra customers willing to exploit their ILS data in similar ways, but the principles may also be useful to non-Sierra sites that also wish to enhancement security, user services or improve back office processes.

  5. How do we update faces? Effects of gaze direction and facial expressions on working memory updating

    Caterina eArtuso

    2012-09-01

    Full Text Available The aim of the study was to investigate how the biological binding between different facial dimensions, and their social and communicative relevance, may impact updating processes in working memory (WM. We focused on WM updating because it plays a key role in ongoing processing. Gaze direction and facial expression are crucial and changeable components of face processing. Direct gaze enhances the processing of approach-oriented facial emotional expressions (e.g. joy, while averted gaze enhances the processing of avoidance-oriented facial emotional expressions (e.g. fear. Thus, the way in which these two facial dimensions are combined communicates to the observer important behavioral and social information. Updating of these two facial dimensions and their bindings has not been investigated before, despite the fact that they provide a piece of social information essential for building and maintaining an internal ongoing representation of our social environment. In Experiment 1 we created a task in which the binding between gaze direction and facial expression was manipulated: high binding conditions (e.g. joy-direct gaze were compared to low binding conditions (e.g. joy-averted gaze. Participants had to study and update continuously a number of faces, displaying different bindings between the two dimensions. In Experiment 2 we tested whether updating was affected by the social and communicative value of the facial dimension binding; to this end, we manipulated bindings between eye and hair color, two less communicative facial dimensions. Two new results emerged. First, faster response times were found in updating combinations of facial dimensions highly bound together. Second, our data showed that the ease of the ongoing updating processing varied depending on the communicative meaning of the binding that had to be updated. The results are discussed with reference to the role of WM updating in social cognition and appraisal processes.

  6. How do we update faces? Effects of gaze direction and facial expressions on working memory updating.

    Artuso, Caterina; Palladino, Paola; Ricciardelli, Paola

    2012-01-01

    The aim of the study was to investigate how the biological binding between different facial dimensions, and their social and communicative relevance, may impact updating processes in working memory (WM). We focused on WM updating because it plays a key role in ongoing processing. Gaze direction and facial expression are crucial and changeable components of face processing. Direct gaze enhances the processing of approach-oriented facial emotional expressions (e.g., joy), while averted gaze enhances the processing of avoidance-oriented facial emotional expressions (e.g., fear). Thus, the way in which these two facial dimensions are combined communicates to the observer important behavioral and social information. Updating of these two facial dimensions and their bindings has not been investigated before, despite the fact that they provide a piece of social information essential for building and maintaining an internal ongoing representation of our social environment. In Experiment 1 we created a task in which the binding between gaze direction and facial expression was manipulated: high binding conditions (e.g., joy-direct gaze) were compared to low binding conditions (e.g., joy-averted gaze). Participants had to study and update continuously a number of faces, displaying different bindings between the two dimensions. In Experiment 2 we tested whether updating was affected by the social and communicative value of the facial dimension binding; to this end, we manipulated bindings between eye and hair color, two less communicative facial dimensions. Two new results emerged. First, faster response times were found in updating combinations of facial dimensions highly bound together. Second, our data showed that the ease of the ongoing updating processing varied depending on the communicative meaning of the binding that had to be updated. The results are discussed with reference to the role of WM updating in social cognition and appraisal processes.

  7. Accessing the mental space-Spatial working memory processes for language and vision overlap in precuneus.

    Wallentin, Mikkel; Weed, Ethan; Østergaard, Leif; Mouridsen, Kim; Roepstorff, Andreas

    2008-05-01

    The "overlapping systems" theory of language function argues that linguistic meaning construction crucially relies on contextual information provided by "nonlinguistic" cognitive systems, such as perception and memory. This study examines whether linguistic processing of spatial relations established by reading sentences call on the same posterior parietal neural system involved in processing spatial relations set up through visual input. Subjects read simple sentences, which presented two agents in relation to each other, and were subsequently asked to evaluate spatial (e.g., "Was he turned towards her?") and equally concrete nonspatial content (e.g., "Was he older than her?"). We found that recall of the spatial content relative to the nonspatial content resulted in higher BOLD response in a dorsoposterior network of brain regions, most significantly in precuneus, strikingly overlapping a network previously shown to be involved in recall of spatial aspects of images depicting similar scenarios. This supports a neurocognitive model of language function, where sentences establish meaning by interacting with the perceptual and working memory networks of the brain. (Copyright) 2006 Wiley-Liss, Inc.

  8. A bilateral advantage in controlling access to visual short-term memory.

    Holt, Jessica L; Delvenne, Jean-François

    2014-01-01

    Recent research on visual short-term memory (VSTM) has revealed the existence of a bilateral field advantage (BFA--i.e., better memory when the items are distributed in the two visual fields than if they are presented in the same hemifield) for spatial location and bar orientation, but not for color (Delvenne, 2005; Umemoto, Drew, Ester, & Awh, 2010). Here, we investigated whether a BFA in VSTM is constrained by attentional selective processes. It has indeed been previously suggested that the BFA may be a general feature of selective attention (Alvarez & Cavanagh, 2005; Delvenne, 2005). Therefore, the present study examined whether VSTM for color benefits from bilateral presentation if attentional selective processes are particularly engaged. Participants completed a color change detection task whereby target stimuli were presented either across both hemifields or within one single hemifield. In order to engage attentional selective processes, some trials contained irrelevant stimuli that needed to be ignored. Targets were selected based on spatial locations (Experiment 1) or on a salient feature (Experiment 2). In both cases, the results revealed a BFA only when irrelevant stimuli were presented among the targets. Overall, the findings strongly suggest that attentional selective processes at encoding can constrain whether a BFA is observed in VSTM.

  9. ERP evidence for hemispheric asymmetries in exemplar-specific explicit memory access.

    Küper, Kristina; Zimmer, Hubert D

    2015-11-02

    The right cerebral hemisphere (RH) appears to be more effective in representing visual objects as distinct exemplars than the left hemisphere (LH) which is presumably biased towards coding objects at the level of abstract prototypes. As of yet, relatively little is known about the role that asymmetries in exemplar-specificity play at the level of explicit memory retrieval. In the present study, we addressed this issue by examining hemispheric asymmetries in the putative event-related potential (ERP) correlates of familiarity (FN400) and recollection (LPC). In an incidental study phase, pictures of familiar objects were presented centrally. At test, participants performed a memory inclusion task on identical repetitions and different exemplars of study items as well as new items which were presented in only one visual hemifield using the divided visual field technique. With respect to familiarity, we observed exemplar-specific FN400 old/new effects that were more pronounced for identical repetitions than different exemplars, irrespective of the hemisphere governing initial stimulus processing. In contrast, LPC old/new effects were subject to some hemispheric asymmetries indicating that exemplar-specific recollection was more extensive in the RH than in the LH. This further corroborates the idea that hemispheric asymmetries should not be generalized but need to be distinguished not only in different domains but also at different levels of processing. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Temperature induced complementary switching in titanium oxide resistive random access memory

    Panda, D., E-mail: dpanda@nist.edu [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Simanjuntak, F. M.; Tseng, T.-Y. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-07-15

    On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

  11. Direct Electrical Stimulation of the Human Entorhinal Region and Hippocampus Impairs Memory.

    Jacobs, Joshua; Miller, Jonathan; Lee, Sang Ah; Coffey, Tom; Watrous, Andrew J; Sperling, Michael R; Sharan, Ashwini; Worrell, Gregory; Berry, Brent; Lega, Bradley; Jobst, Barbara C; Davis, Kathryn; Gross, Robert E; Sheth, Sameer A; Ezzyat, Youssef; Das, Sandhitsu R; Stein, Joel; Gorniak, Richard; Kahana, Michael J; Rizzuto, Daniel S

    2016-12-07

    Deep brain stimulation (DBS) has shown promise for treating a range of brain disorders and neurological conditions. One recent study showed that DBS in the entorhinal region improved the accuracy of human spatial memory. Based on this line of work, we performed a series of experiments to more fully characterize the effects of DBS in the medial temporal lobe on human memory. Neurosurgical patients with implanted electrodes performed spatial and verbal-episodic memory tasks. During the encoding periods of both tasks, subjects received electrical stimulation at 50 Hz. In contrast to earlier work, electrical stimulation impaired memory performance significantly in both spatial and verbal tasks. Stimulation in both the entorhinal region and hippocampus caused decreased memory performance. These findings indicate that the entorhinal region and hippocampus are causally involved in human memory and suggest that refined methods are needed to use DBS in these regions to improve memory. Copyright © 2016 Elsevier Inc. All rights reserved.

  12. The thermochemical behavior of some binary shape memory alloys by high temperature direct synthesis calorimetry

    Meschel, S.V.; Pavlu, J.; Nash, P.

    2011-01-01

    Research highlights: → We studied 14 shape memory alloys. → The enthalpies of formation and structure characteristics are summarized. → Theoretical predictions by ab initio calculations compare better with experimental measurements than Miedema's semi empirical model. - Abstract: The standard enthalpies of formation of some shape memory alloys have been measured by high temperature direct synthesis calorimetry at 1373 K. The following results (in kJ/mol of atoms) are reported: CoCr (-0.3 ± 2.9); CuMn (-3.7 ± 3.2); Cu 3 Sn (-10.4 ± 3.1); Fe 2 Tb (-5.5 ± 2.4); Fe 2 Dy (-1.6 ± 2.9); Fe 17 Tb 2 (-2.1 ± 3.1); Fe 17 Dy 2 (-5.3 ± 1.7); FePd 3 (-16.0 ± 2.7); FePt (-23.0 ± 1.9); FePt 3 (-20.7 ± 2.3); NiMn (-24.9 ± 2.6); TiNi (-32.7 ± 1.0); TiPd (-60.3 ± 2.5). The results are compared with some earlier experimental values obtained by calorimetry and by EMF technique. They are also compared with predicted values on the basis of the semi empirical model of Miedema and co-workers and with ab initio calculations when available. We will also assess the available information regarding the structures of these alloys.

  13. A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability.

    Kim, Hyungjin; Kim, Sihyun; Kim, Hyun-Min; Lee, Kitae; Kim, Sangwan; Pak, Byung-Gook

    2018-09-01

    In this study, we investigate a one-transistor (1T) dynamic random access memory (DRAM) cell based on a gated-thyristor device utilizing voltage-driven bistability to enable high-speed operations. The structural feature of the surrounding gate using a sidewall provides high scalability with regard to constructing an array architecture of the proposed devices. In addition, the operation mechanism, I-V characteristics, DRAM operations, and bias dependence are analyzed using a commercial device simulator. Unlike conventional 1T DRAM cells utilizing the floating body effect, excess carriers which are required to be stored to make two different states are not generated but injected from the n+ cathode region, giving the device high-speed operation capabilities. The findings here indicate that the proposed DRAM cell offers distinct advantages in terms of scalability and high-speed operations.

  14. A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

    Chien, Wei-Chih; Chen, Yi-Chou; Lee, Feng-Ming; Lin, Yu-Yu; Lai, Erh-Kun; Yao, Yeong-Der; Gong, Jeng; Horng, Sheng-Fu; Yeh, Chiao-Wen; Tsai, Shih-Chang; Lee, Ching-Hsiung; Huang, Yu-Kai; Chen, Chun-Fu; Kao, Hsiao-Feng; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Lu, Chih-Yuan

    2011-04-01

    The behavior of WOX resistive random access memory (ReRAM) is a strong function of the top electrode material, which controls the conduction mechanism and the forming process. When using a top electrode with low work function, the current conduction is limited by space charges. On the other hand, the mechanism becomes thermionic emission for devices with a high work function top electrode. These (thermionic) devices are also found to have higher initial resistance, reduced forming current, and larger resistance window. Based on these insights and considering the compatibility to complementary metal-oxide-semiconductor (CMOS) process, we proposed to use Ni as the top electrode for high performance WOX ReRAM devices. The new Ni/WOX/W device can be switched at a low current density less than 8×105 A/cm2, with RESET/SET resistance ratio greater than 100, and extremely good data retention of more than 300 years at 85 °C.

  15. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of)

    2016-08-15

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  16. An energy efficient and high speed architecture for convolution computing based on binary resistive random access memory

    Liu, Chen; Han, Runze; Zhou, Zheng; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2018-04-01

    In this work we present a novel convolution computing architecture based on metal oxide resistive random access memory (RRAM) to process the image data stored in the RRAM arrays. The proposed image storage architecture shows performances of better speed-device consumption efficiency compared with the previous kernel storage architecture. Further we improve the architecture for a high accuracy and low power computing by utilizing the binary storage and the series resistor. For a 28 × 28 image and 10 kernels with a size of 3 × 3, compared with the previous kernel storage approach, the newly proposed architecture shows excellent performances including: 1) almost 100% accuracy within 20% LRS variation and 90% HRS variation; 2) more than 67 times speed boost; 3) 71.4% energy saving.

  17. No evidence for enhancements to visual working memory with transcranial direct current stimulation to prefrontal or posterior parietal cortices.

    Robison, Matthew K; McGuirk, William P; Unsworth, Nash

    2017-08-01

    The present study examined the relative contributions of the prefrontal cortex (PFC) and posterior parietal cortex (PPC) to visual working memory. Evidence from a number of different techniques has led to the theory that the PFC controls access to working memory (i.e., filtering), determining which information is encoded and maintained for later use whereas the parietal cortex determines how much information is held at 1 given time, regardless of relevance (i.e., capacity; McNab & Klingberg, 2008; Vogel, McCollough, & Machizawa, 2005). To test this theory, we delivered transcranial DC stimulation (tDCS) to the right PFC and right PPC and measured visual working memory capacity and filtering abilities both during and immediately following stimulation. We observed no evidence that tDCS to either the PFC or PPC significantly improved visual working memory. Although the present results did not allow us to make firm theoretical conclusions about the roles of the PFC and PPC in working memory, the results add to the growing body of literature surrounding tDCS and its associated behavioral and neurophysiological effects. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  18. Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

    Hanna, W. A.; Panagos, P.

    1983-01-01

    This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

  19. Conscious Access to Suppressed Threatening Information Is Modulated by Working Memory.

    Liu, Dong; Wang, Li; Wang, Ying; Jiang, Yi

    2016-11-01

    Previous research has demonstrated that emotional information processing can be modulated by what is being held in working memory (WM). Here, we showed that such content-based WM effects can occur even when the emotional information is suppressed from conscious awareness. Using the delayed-match-to-sample paradigm in conjunction with continuous flash suppression, we found that suppressed threatening (fearful and angry) faces emerged from suppression faster when they matched the emotional valence of WM contents than when they did not. This effect cannot be explained by perceptual priming, as it disappeared when the faces were only passively viewed and not held in WM. Crucially, such an effect is highly specific to threatening faces but not to happy or neutral faces. Our findings together suggest that WM can modulate nonconscious emotion processing, which highlights the functional association between nonconsciously triggered emotional processes and conscious emotion representation. © The Author(s) 2016.

  20. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  1. Photon echo quantum random access memory integration in a quantum computer

    Moiseev, Sergey A; Andrianov, Sergey N

    2012-01-01

    We have analysed an efficient integration of multi-qubit echo quantum memory (QM) into the quantum computer scheme based on squids, quantum dots or atomic resonant ensembles in a quantum electrodynamics cavity. Here, one atomic ensemble with controllable inhomogeneous broadening is used for the QM node and other nodes characterized by the homogeneously broadened resonant line are used for processing. We have found the optimal conditions for the efficient integration of the multi-qubit QM modified for the analysed scheme, and we have determined the self-temporal modes providing a perfect reversible transfer of the photon qubits between the QM node and arbitrary processing nodes. The obtained results open the way for realization of a full-scale solid state quantum computing based on the efficient multi-qubit QM. (paper)

  2. Expanding the Enzyme Universe: Accessing Non-Natural Reactions by Mechanism-Guided Directed Evolution

    Renata, Hans; Wang, Z. Jane

    2015-01-01

    High selectivities and exquisite control over reaction outcomes entice chemists to use biocatalysts in organic synthesis. However, many useful reactions are not accessible because they are not in nature’s known repertoire. We will use this review to outline an evolutionary approach to engineering enzymes to catalyze reactions not found in nature. We begin with examples of how nature has discovered new catalytic functions and how such evolutionary progressions have been recapitulated in the laboratory starting from extant enzymes. We then examine non-native enzyme activities that have been discovered and exploited for chemical synthesis, emphasizing reactions that do not have natural counterparts. The new functions have mechanistic parallels to the native reaction mechanisms that often manifest as catalytic promiscuity and the ability to convert from one function to the other with minimal mutation. We present examples of how non-natural activities have been improved by directed evolution, mimicking the process used by nature to create new catalysts. Examples of new enzyme functions include epoxide opening reactions with non-natural nucleophiles catalyzed by a laboratory-evolved halohydrin dehalogenase, cyclopropanation and other carbene transfer reactions catalyzed by cytochrome P450 variants, and non-natural modes of cyclization by a modified terpene synthase. Lastly, we describe discoveries of non-native catalytic functions that may provide future opportunities for expanding the enzyme universe. PMID:25649694

  3. Access and Quality of Care in Direct-to-Consumer Telemedicine.

    Uscher-Pines, Lori; Mulcahy, Andrew; Cowling, David; Hunter, Gerald; Burns, Rachel; Mehrotra, Ateev

    2016-04-01

    Direct-to-consumer (DTC) telemedicine serves millions of patients; however, there is limited research on the care provided. This study compared the quality of care at Teladoc ( www.teladoc.com ), a large DTC telemedicine company, with that at physician offices and compared access to care for Teladoc users and nonusers. Claims from all enrollees 18-64 years of age in the California Public Employees' Retirement System health maintenance organization between April 2012 and October 2013 were analyzed. We compared the performance of Teladoc and physician offices on applicable Healthcare Effectiveness Data and Information Set measures. Using geographic information system analyses, we compared Teladoc users and nonusers with respect to rural location and available primary care physicians. Of enrollees offered Teladoc (n = 233,915), 3,043 adults had a total of 4,657 Teladoc visits. For the pharyngitis performance measure (ordering strep test), Teladoc performed worse than physician offices (3% versus 50%, p located within a healthcare professional shortage area (odds ratio = 1.12, p = 0.10) or rural location (odds ratio = 1.0, p = 0.10). Teladoc providers were less likely to order diagnostic testing and had poorer performance on appropriate antibiotic prescribing for bronchitis. Teladoc users were not preferentially located in underserved communities. Short-term needs include ongoing monitoring of quality and additional marketing and education to increase telemedicine use among underserved patients.

  4. The automatic visual simulation of words: A memory reactivated mask slows down conceptual access.

    Rey, Amandine E; Riou, Benoit; Vallet, Guillaume T; Versace, Rémy

    2017-03-01

    How do we represent the meaning of words? The present study assesses whether access to conceptual knowledge requires the reenactment of the sensory components of a concept. The reenactment-that is, simulation-was tested in a word categorisation task using an innovative masking paradigm. We hypothesised that a meaningless reactivated visual mask should interfere with the simulation of the visual dimension of concrete words. This assumption was tested in a paradigm in which participants were not aware of the link between the visual mask and the words to be processed. In the first phase, participants created a tone-visual mask or tone-control stimulus association. In the test phase, they categorised words that were presented with 1 of the tones. Results showed that words were processed more slowly when they were presented with the reactivated mask. This interference effect was only correlated with and explained by the value of the visual perceptual strength of the words (i.e., our experience with the visual dimensions associated with concepts) and not with other characteristics. We interpret these findings in terms of word access, which may involve the simulation of sensory features associated with the concept, even if participants were not explicitly required to access visual properties. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  5. Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memories

    Breemen, A.J.J.M. van; Zaba, T.; Khikhlovskyi, V.; Michels, J.; Janssen, R.; Kemerink, M.; Gelinck, G.

    2015-01-01

    The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a

  6. Self-Referential Information Alleviates Retrieval Inhibition of Directed Forgetting Effects—An ERP Evidence of Source Memory

    Xinrui Mao

    2017-10-01

    Full Text Available Directed forgetting (DF assists in preventing outdated information from interfering with cognitive processing. Previous studies pointed that self-referential items alleviated DF effects due to the elaboration of encoding processes. However, the retrieval mechanism of this phenomenon remains unknown. Based on the dual-process framework of recognition, the retrieval of self-referential information was involved in familiarity and recollection. Using source memory tasks combined with event-related potential (ERP recording, our research investigated the retrieval processes of alleviative DF effects elicited by self-referential information. The FN400 (frontal negativity at 400 ms is a frontal potential at 300–500 ms related to familiarity and the late positive complex (LPC is a later parietal potential at 500–800 ms related to recollection. The FN400 effects of source memory suggested that familiarity processes were promoted by self-referential effects without the modulation of to-be-forgotten (TBF instruction. The ERP results of DF effects were involved with LPCs of source memory, which indexed retrieval processing of recollection. The other-referential source memory of TBF instruction caused the absence of LPC effects, while the self-referential source memory of TBF instruction still elicited the significant LPC effects. Therefore, our neural findings suggested that self-referential processing improved both familiarity and recollection. Furthermore, the self-referential processing advantage which was caused by the autobiographical retrieval alleviated retrieval inhibition of DF, supporting that the self-referential source memory alleviated DF effects.

  7. Memories.

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  8. Dopaminergic inputs in the dentate gyrus direct the choice of memory encoding

    Du, Huiyun; Deng, Wei; Aimone, James B.; Ge, Minyan; Parylak, Sarah

    2016-01-01

    Rewarding experiences are often well remembered, and such memory formation is known to be dependent on dopamine modulation of the neural substrates engaged in learning and memory; however, it is unknown how and where in the brain dopamine signals bias episodic memory toward preceding rather than subsequent events. Here we found that photostimulation of channelrhodopsin-2–expressing dopaminergic fibers in the dentate gyrus induced a long-term depression of cortical inputs, diminished theta oscillations, and impaired subsequent contextual learning. Computational modeling based on this dopamine modulation indicated an asymmetric association of events occurring before and after reward in memory tasks. In subsequent behavioral experiments, preexposure to a natural reward suppressed hippocampus-dependent memory formation, with an effective time window consistent with the duration of dopamine-induced changes of dentate activity. Altogether, our results suggest a mechanism by which dopamine enables the hippocampus to encode memory with reduced interference from subsequent experience.

  9. Neuro-Cognitive Intervention for Working Memory: Preliminary Results and Future Directions.

    Bree, Kathleen D; Beljan, Paul

    2016-01-01

    Definitions of working memory identify it as a function of the executive function system in which an individual maintains two or more pieces of information in mind and uses that information simultaneously for some purpose. In academics, working memory is necessary for a variety of functions, including attending to the information one's teacher presents and then using that information simultaneously for problem solving. Research indicates difficulties with working memory are observed in children with mathematics learning disorder (MLD) and reading disorders (RD). To improve working memory and other executive function difficulties, and as an alternative to medication treatments for attention and executive function disorders, the Motor Cognition(2)® (MC(2)®)program was developed. Preliminary research on this program indicates statistically significant improvements in working memory, mathematics, and nonsense word decoding for reading. Further research on the MC(2)® program and its impact on working memory, as well as other areas of executive functioning, is warranted.

  10. No effect of transcranial direct current stimulation of the dorsolateral prefrontal cortex on short-term memory.

    Wang, Jing; Wen, Jian-Bing; Li, Xiao-Li

    2018-01-01

    Short-term memory refers to the capacity for holding information in mind for a short period of time with conscious memorization. It is an important ability for daily life and is impaired in several neurological and psychiatric disorders. Anodal transcranial direct current stimulation (tDCS) applied to the dorsolateral prefrontal cortex (DLPFC) was reported to enhance the capability of short-term memory in healthy subjects. However, results were not consistent and what is the possible impact factor is not known. One important factor that may significantly influence the effect of tDCS is the timing of tDCS administration. In order to explore whether tDCS impact short-term memory and the optimal timing of tDCS administration, we applied anodal tDCS to the left DLPFC to explore the modulatory effect of online and off-line tDCS on digit span as well as visual short-term memory performance in healthy subjects. Results showed tDCS of the left DLPFC did not influence intentional digit span memory performance, whether before the task or during the task. In addition, tDCS of the DLPFC administered before the task showed no effect on visual short-term memory, while there was a trend of increase in false alarm when tDCS of the DLPFC administered during the task. These results did not provide evidence for the enhancement of short-term memory by tDCS of the left DLPFC in healthy subjects, but it suggested an importance of administration time for visual short-term memory. Further studies are required to taking into account the baseline performance of subjects and time-dependence feature of tDCS. © 2017 John Wiley & Sons Ltd.

  11. Direct access and patient/client self-referral to physiotherapy: a review of contemporary practice within the European Union.

    Bury, T J; Stokes, E K

    2013-12-01

    Direct access refers to service users being able to refer themselves to physiotherapy without a third-party referral. It represents a model of practice supported globally by the profession, growing research evidence and health policy in some health systems. To the authors' knowledge, no research has been reported to ascertain the extent to which direct access is available within the physiotherapy profession within the European Union (EU). To survey member organisations of the World Confederation for Physical Therapy (WCPT); establish the number of member states within the EU where it is possible for individuals seeking physiotherapy services to self-refer; describe the legislative/regulatory and reimbursement contexts in which physiotherapy services are delivered; examine if physiotherapy practice is different in member states where direct access is permitted compared with member states where direct access is not permitted; and to describe the barriers and facilitators to direct access perceived by member organisations of the WCPT. Cross-sectional, online survey using a purposive sample. Member organisations of the WCPT in the EU. Direct access is not available in all member states of the EU, despite the majority having legislation to regulate the profession, and entry-level education programmes that produce graduates with the requisite competencies. Key barriers perceived are those that can influence policy development, including the views of the medical profession and politicians. Support of service users and politicians, as well as professional autonomy, are seen as key facilitators. These results represent the first report of a comprehensive mapping of direct access to physiotherapy and contexts within the EU. In over half of member states, service users can self-refer to physiotherapists. These results provide insights to further individuals' understanding about the similarities and differences in working practices and service delivery factors, such as

  12. Elucidation and Optimization of Resistive Random Access Memory Switching Behavior for Advanced Computing Applications

    Alamgir, Zahiruddin

    RRAM has recently emerged as a strong candidate for non-volatile memory (NVM). Beyond memory applications, RRAM holds promise for use in performing logic functions, mimicking neuromorphic activities, enabling multi-level switching, and as one of the key elements of hardware based encryption or signal processing systems. It has been shown previously that RRAM resistance levels can be changed by adjusting compliance current or voltage level. This characteristic makes RRAM suitable for use in setting the synaptic weight in neuromorphic computing circuits. RRAM is also considered as a key element in hardware encryption systems, to produce unique and reproducible signals. However, a key challenge to implement RRAM in these applications is significant cycle to cycle performance variability. We sought to develop RRAM that can be tuned to different resistance levels gradually, with high reliability, and low variability. To achieve this goal, we focused on elucidating the conduction mechanisms underlying the resistive switching behavior for these devices. Electrical conduction mechanisms were determined by curve fitting I-V data using different current conduction equations. Temperature studies were also performed to corroborate these data. It was found that Schottky barrier height and width modulation was one of the key parameters that could be tuned to achieve different resistance levels, and for switching resistance states, primarily via oxygen vacancy movement. Oxygen exchange layers with different electronegativity were placed between top electrode and the oxide layer of TaOx devices to determine the effect of oxygen vacancy concentrations and gradients in these devices. It was found that devices with OELs with lower electronegativity tend to yield greater separation in the OFF vs. ON state resistance levels. As an extension of this work, TaOx based RRAM with Hf as the OEL was fabricated and could be tuned to different resistance level using pulse width and height

  13. Rehearsal of To-Be-Remembered Items Is Unnecessary to Perform Directed Forgetting within Working Memory: Support for an Active Control Mechanism

    Festini, Sara B.; Reuter-Lorenz, Patricia A.

    2017-01-01

    Directed forgetting tasks instruct people to forget targeted memoranda. In the context of working memory, people attempt to forget representations that are currently held in mind. Here, we evaluated candidate mechanisms of directed forgetting within working memory, by (a) testing the influence of articulatory suppression, a rehearsal-reducing and…

  14. Enhancing Public Access to Relevant and Valued Medical Information: Fresh Directions for RadiologyInfo.org.

    Rubin, Geoffrey D; Krishnaraj, Arun; Mahesh, Mahadevappa; Rajendran, Ramji R; Fishman, Elliot K

    2017-05-01

    RadiologyInfo.org is a public information portal designed to support patient care and broaden public awareness of the essential role radiology plays in overall patient health care. Over the past 14 years, RadiologyInfo.org has evolved considerably to provide access to more than 220 mixed-media descriptions of tests, treatments, and diseases through a spectrum of mobile and desktop platforms, social media, and downloadable documents in both English and Spanish. In 2014, the RSNA-ACR Public Information Website Committee, which stewards RadiologyInfo.org, developed 3- to 5-year strategic and implementation plans for the website. The process was informed by RadiologyInfo.org user surveys, formal stakeholder interviews, focus groups, and usability testing. Metrics were established as key performance indicators to assess progress toward the stated goals of (1) optimizing content to enhance patient-centeredness, (2) enhancing reach and engagement, and (3) maintaining sustainability. Major changes resulting from this process include a complete redesign of the website, the replacement of text-rich PowerPoint presentations with conversational videos, and the development of an affiliate network. Over the past year, visits to RadiologyInfo.org have increased by 60.27% to 1,424,523 in August 2016 from 235 countries and territories. Twenty-two organizations have affiliated with RadiologyInfo.org with new organizations being added on a monthly basis. RadiologyInfo provides a tangible demonstration of how radiologists can engage directly with the global public to educate them on the value of radiology in their health care and to allay concerns and dispel misconceptions. Regular self-assessment and responsive planning will ensure its continued growth and relevance. Copyright © 2016 American College of Radiology. Published by Elsevier Inc. All rights reserved.

  15. On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

    Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

    2018-02-01

    In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

  16. Minimal access direct spondylolysis repair using a pedicle screw-rod system: a case series

    Mohi Eldin Mohamed

    2012-11-01

    Full Text Available Abstract Introduction Symptomatic spondylolysis is always challenging to treat because the pars defect causing the instability needs to be stabilized while segmental fusion needs to be avoided. Direct repair of the pars defect is ideal in cases of spondylolysis in which posterior decompression is not necessary. We report clinical results using segmental pedicle-screw-rod fixation with bone grafting in patients with symptomatic spondylolysis, a modification of a technique first reported by Tokuhashi and Matsuzaki in 1996. We also describe the surgical technique, assess the fusion and analyze the outcomes of patients. Case presentation At Cairo University Hospital, eight out of twelve Egyptian patients’ acute pars fractures healed after conservative management. Of those, two young male patients underwent an operative procedure for chronic low back pain secondary to pars defect. Case one was a 25-year-old Egyptian man who presented with a one-year history of axial low back pain, not radiating to the lower limbs, after falling from height. Case two was a 29-year-old Egyptian man who presented with a one-year history of axial low back pain and a one-year history of mild claudication and infrequent radiation to the leg, never below the knee. Utilizing a standardized mini-access fluoroscopically-guided surgical protocol, fixation was established with two titanium pedicle screws place into both pedicles, at the same level as the pars defect, without violating the facet joint. The cleaned pars defect was grafted; a curved titanium rod was then passed under the base of the spinous process of the affected vertebra, bridging the loose fragment, and attached to the pedicle screw heads, to uplift the spinal process, followed by compression of the defect. The patients were discharged three days after the procedure, with successful fusion at one-year follow-up. No rod breakage or implant-related complications were reported. Conclusions Where there is no

  17. Dealing with the unexpected: consumer responses to direct-access BRCA mutation testing

    Uta Francke

    2013-02-01

    -positive participants appreciated learning their BRCA mutation status.Conclusions. Direct access to BRCA mutation tests, considered a model for high-risk actionable genetic tests of proven clinical utility, provided clear benefits to participants. The unexpected information demonstrated a cascade effect as relatives of newly identified carriers also sought testing and more mutation carriers were identified. Given the absence of evidence for serious emotional distress or inappropriate actions in this subset of mutation-positive customers who agreed to be interviewed for this study, broader screening of Ashkenazi Jewish women for these three BRCA mutations should be considered.

  18. Dealing with the unexpected: consumer responses to direct-access BRCA mutation testing.

    Francke, Uta; Dijamco, Cheri; Kiefer, Amy K; Eriksson, Nicholas; Moiseff, Bianca; Tung, Joyce Y; Mountain, Joanna L

    2013-01-01

    appreciated learning their BRCA mutation status. Conclusions. Direct access to BRCA mutation tests, considered a model for high-risk actionable genetic tests of proven clinical utility, provided clear benefits to participants. The unexpected information demonstrated a cascade effect as relatives of newly identified carriers also sought testing and more mutation carriers were identified. Given the absence of evidence for serious emotional distress or inappropriate actions in this subset of mutation-positive customers who agreed to be interviewed for this study, broader screening of Ashkenazi Jewish women for these three BRCA mutations should be considered.

  19. Working Memory and Hearing Aid Processing: Literature Findings, Future Directions, and Clinical Applications.

    Souza, Pamela; Arehart, Kathryn; Neher, Tobias

    2015-01-01

    Working memory-the ability to process and store information-has been identified as an important aspect of speech perception in difficult listening environments. Working memory can be envisioned as a limited-capacity system which is engaged when an input signal cannot be readily matched to a stored representation or template. This "mismatch" is expected to occur more frequently when the signal is degraded. Because working memory capacity varies among individuals, those with smaller capacity are expected to demonstrate poorer speech understanding when speech is degraded, such as in background noise. However, it is less clear whether (and how) working memory should influence practical decisions, such as hearing treatment. Here, we consider the relationship between working memory capacity and response to specific hearing aid processing strategies. Three types of signal processing are considered, each of which will alter the acoustic signal: fast-acting wide-dynamic range compression, which smooths the amplitude envelope of the input signal; digital noise reduction, which may inadvertently remove speech signal components as it suppresses noise; and frequency compression, which alters the relationship between spectral peaks. For fast-acting wide-dynamic range compression, a growing body of data suggests that individuals with smaller working memory capacity may be more susceptible to such signal alterations, and may receive greater amplification benefit with "low alteration" processing. While the evidence for a relationship between wide-dynamic range compression and working memory appears robust, the effects of working memory on perceptual response to other forms of hearing aid signal processing are less clear cut. We conclude our review with a discussion of the opportunities (and challenges) in translating information on individual working memory into clinical treatment, including clinically feasible measures of working memory.

  20. Modified Cooperative Access with Relay’s Data (MCARD based Directional Antenna for multi-rate WLANs

    Ahmed Magdy

    2014-03-01

    Full Text Available In this paper, for multi-rate wireless local area networks (WLANs, a modified protocol in Medium Access Control (MAC, called Modified Cooperative Access with Relay’s Data (MCARD based Directional Antenna using half wave length dipole in Uniform Circular Array (UCA topology is proposed. MCARD gives remote stations chance to send their information by using intermediate stations (relays to Access Point (AP at a higher data rate based practical antenna. As can be seen under MCARD, a relay station transmits its information before forwarding information from the source station because it uses directional antenna. Analytical results and simulations show that MCARD can significantly improve system quality of service (QOS in terms of throughput under different channel conditions.

  1. Disk access controller for Multi 8 computer

    Segalard, Jean

    1970-01-01

    After having presented the initial characteristics and weaknesses of the software provided for the control of a memory disk coupled with a Multi 8 computer, the author reports the development and improvement of this controller software. He presents the different constitutive parts of the computer and the operation of the disk coupling and of the direct access to memory. He reports the development of the disk access controller: software organisation, loader, subprograms and statements

  2. One-way shared memory

    Schoeberl, Martin

    2018-01-01

    Standard multicore processors use the shared main memory via the on-chip caches for communication between cores. However, this form of communication has two limitations: (1) it is hardly time-predictable and therefore not a good solution for real-time systems and (2) this single shared memory...... is a bottleneck in the system. This paper presents a communication architecture for time-predictable multicore systems where core-local memories are distributed on the chip. A network-on-chip constantly copies data from a sender core-local memory to a receiver core-local memory. As this copying is performed...... in one direction we call this architecture a one-way shared memory. With the use of time-division multiplexing for the memory accesses and the network-on-chip routers we achieve a time-predictable solution where the communication latency and bandwidth can be bounded. An example architecture for a 3...

  3. Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

    Wouters, D. J.; Maes, D.; Goux, L.; Lisoni, J. G.; Paraschiv, V.; Johnson, J. A.; Schwitters, M.; Everaert, J.-L.; Boullart, W.; Schaekers, M.; Willegems, M.; Vander Meeren, H.; Haspeslagh, L.; Artoni, C.; Caputa, C.; Casella, P.; Corallo, G.; Russo, G.; Zambrano, R.; Monchoix, H.; Vecchio, G.; Van Autryve, L.

    2006-09-01

    Ferroelectric random access memory (FeRAM) is an attractive candidate technology for embedded nonvolatile memory, especially in applications where low power and high program speed are important. Market introduction of high-density FeRAM is, however, lagging behind standard complementary metal-oxide semiconductor (CMOS) because of the difficult integration technology. This paper discusses the major integration issues for high-density FeRAM, based on SrBi2Ta2O9 (strontium bismuth tantalate or SBT), in relation to the fabrication of our stacked cell structure. We have worked in the previous years on the development of SBT-FeRAM integration technology, based on a so-called pseudo-three-dimensional (3D) cell, with a capacitor that can be scaled from quasi two-dimensional towards a true three-dimensional capacitor where the sidewalls will importantly contribute to the signal. In the first phase of our integration development, we integrated our FeRAM cell in a 0.35μm CMOS technology. In a second phase, then, possibility of scaling of our cell is demonstrated in 0.18μm technology. The excellent electrical and reliability properties of the small integrated ferroelectric capacitors prove the feasibility of the technology, while the verification of the potential 3D effect confirms the basic scaling potential of our concept beyond that of the single-mask capacitor. The paper outlines the different material and technological challenges, and working solutions are demonstrated. While some issues are specific to our own cell, many are applicable to different stacked FeRAM cell concepts, or will become more general concerns when more developments are moving into 3D structures.

  4. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    Tomczak, Y., E-mail: Yoann.Tomczak@imec.be [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium); Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A. [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Liu, E. [Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-01-25

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  5. 75 FR 11189 - Expanded Access to Direct-Acting Antiviral Agents for the Treatment of Chronic Hepatitis C...

    2010-03-10

    ... viral hepatitis and from 70 to 90 percent of all cases of hepatocellular carcinoma. An estimated 3.2...] Expanded Access to Direct-Acting Antiviral Agents for the Treatment of Chronic Hepatitis C Infection in... hepatitis C (CHC) infection in patients with unmet medical need. This public hearing is being held to obtain...

  6. “Forget to Whom You Have Told This Proverb”: Directed Forgetting of Destination Memory in Alzheimer's Disease

    El Haj, Mohamad; Gandolphe, Marie-Charlotte; Allain, Philippe; Fasotti, Luciano; Antoine, Pascal

    2015-01-01

    Destination memory is the ability to remember the receiver of transmitted information. By means of a destination memory directed forgetting task, we investigated whether participants with Alzheimer's Disease (AD) were able to suppress irrelevant information in destination memory. Twenty-six AD participants and 30 healthy elderly subjects were asked to tell 10 different proverbs to 10 different celebrities (List 1). Afterwards, half of the participants were instructed to forget the destinations (i.e., the celebrities) whereas the other half were asked to keep them in mind. After telling 10 other proverbs to 10 other celebrities (List 2), participants were asked to read numbers aloud. Subsequently, all the participants were asked to remember the destinations of List 1 and List 2, regardless of the forget or remember instructions. The results show similar destination memory in AD participants who were asked to forget the destinations of List 1 and those who were asked to retain them. These findings are attributed to inhibitory deficits, by which AD participants have difficulties to suppress irrelevant information in destination memory. PMID:25918456

  7. Working memory and hearing aid processing: Literature findings, future directions, and clinical applications

    Pamela eSouza

    2015-12-01

    Full Text Available Working memory—the ability to process and store information—has been identified as an important aspect of speech perception in difficult listening environments. Working memory can be envisioned as a limited-capacity system which is engaged when an input signal cannot be readily matched to a stored representation or template. This mismatch is expected to occur more frequently when the signal is degraded. Because working memory capacity varies among individuals, those with smaller capacity are expected to demonstrate poorer speech understanding when speech is degraded, such as in background noise. However, it is less clear whether (and how working memory should influence practical decisions, such as hearing treatment. Here, we consider the relationship between working memory capacity and response to specific hearing aid processing strategies. Three types of signal processing are considered, each of which will alter the acoustic signal: fast-acting wide-dynamic range compression, which smooths the amplitude envelope of the input signal; digital noise reduction, which may inadvertently remove speech signal components as it suppresses noise; and frequency compression, which alters the relationship between spectral peaks. For fast-acting wide-dynamic range compression, a growing body of data suggests that individuals with smaller working memory capacity may be more susceptible to such signal alterations, and may receive greater amplification benefit with low alteration processing. While the evidence for a relationship between wide-dynamic range compression and working memory appears robust, the effects of working memory on perceptual response to other forms of hearing aid signal processing are less clear cut. We conclude our review with a discussion of the opportunities (and challenges in translating information on individual working memory into clinical treatment, including clinically-feasible measures of working memory.

  8. Efficiently GPU-accelerating long kernel convolutions in 3-D DIRECT TOF PET reconstruction via memory cache optimization

    Ha, Sungsoo; Mueller, Klaus [Stony Brook Univ., NY (United States). Center for Visual Computing; Matej, Samuel [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Radiology

    2011-07-01

    The DIRECT represents a novel approach for 3-D Time-of-Flight (TOF) PET reconstruction. Its novelty stems from the fact that it performs all iterative predictor-corrector operations directly in image space. The projection operations now amount to convolutions in image space, using long TOF (resolution) kernels. While for spatially invariant kernels the computational complexity can be algorithmically overcome by replacing spatial convolution with multiplication in Fourier space, spatially variant kernels cannot use this shortcut. Therefore in this paper, we describe a GPU-accelerated approach for this task. However, the intricate parallel architecture of GPUs poses its own challenges, and careful memory and thread management is the key to obtaining optimal results. As convolution is mainly memory-bound we focus on the former, proposing two types of memory caching schemes that warrant best cache memory re-use by the parallel threads. In contrast to our previous two-stage algorithm, the schemes presented here are both single-stage which is more accurate. (orig.)

  9. Effects of psychosocial stress on the goal-directed and habit memory systems during learning and later execution.

    Fournier, Marion; d'Arripe-Longueville, Fabienne; Radel, Rémi

    2017-03-01

    Instrumental learning occurs through both goal-directed and habit memory systems, which are supported by anatomically distinct brain systems. Interestingly, stress may promote habits at the expense of goal-directed performance, since stress before training in an instrumental task was found to cause individuals to carry on with the learned association in spite of a devalued outcome. These findings nevertheless left pending questions, and it has been difficult to determine which system is primarily affected by stress (an improved habit system, an impaired goal-directed system, or both) and at what point the stress acts (at the moment of learning by making more resistant habits, or after devaluation by making individuals less sensitive to change in the outcome value). The present study (N=72 participants, 63 males and 9 females) aimed to answer these questions with (i) an instrumental task that dissociates the two memory systems and (ii) three conditions of psychosocial stress exposure (Trier Social Stress Test): stress induced before learning, before devaluation, and not induced for the control group. The study confirms that exposure to psychosocial stress leads to habitual performance. Moreover, it provides new insight into this effect by locating its origin as an impairment in the capacity of the goal-directed system rather than a reinforcement in habit learning. These results are discussed in light of recent neurobiological models of stress and memory. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  11. Neural Correlates of Direct Access Trading in a Real Stock Market: An fMRI Investigation.

    Raggetti, GianMario; Ceravolo, Maria G; Fattobene, Lucrezia; Di Dio, Cinzia

    2017-01-01

    Background: While financial decision making has been barely explored, no study has previously investigated the neural correlates of individual decisions made by professional traders involved in real stock market negotiations, using their own financial resources. Aim: We sought to detect how different brain areas are modulated by factors like age, expertise, psychological profile (speculative risk seeking or aversion) and, eventually, size and type (Buy/Sell) of stock negotiations, made through Direct Access Trading (DAT) platforms. Subjects and methods: Twenty male traders underwent fMRI while negotiating in the Italian stock market using their own preferred trading platform. Results: At least 20 decision events were collected during each fMRI session. Risk averse traders performed a lower number of financial transactions with respect to risk seekers, with a lower average economic value, but with a higher rate of filled proposals. Activations were observed in cortical and subcortical areas traditionally involved in decision processes, including the ventrolateral and dorsolateral prefrontal cortex (vlPFC, dlPFC), the posterior parietal cortex (PPC), the nucleus accumbens (NAcc), and dorsal striatum. Regression analysis indicated an important role of age in modulating activation of left NAcc, while traders' expertise was negatively related to activation of vlPFC. High value transactions were associated with a stronger activation of the right PPC when subjects' buy rather than sell. The success of the trading activity, based on a large number of filled transactions, was related with higher activation of vlPFC and dlPFC. Independent of chronological and professional age, traders differed in their attitude to DAT, with distinct brain activity profiles being detectable during fMRI sessions. Those subjects who described themselves as very self-confident, showed a lower or absent activation of both the caudate nucleus and the dlPFC, while more reflexive traders showed

  12. Neural Correlates of Direct Access Trading in a Real Stock Market: An fMRI Investigation

    GianMario Raggetti

    2017-09-01

    Full Text Available Background: While financial decision making has been barely explored, no study has previously investigated the neural correlates of individual decisions made by professional traders involved in real stock market negotiations, using their own financial resources.Aim: We sought to detect how different brain areas are modulated by factors like age, expertise, psychological profile (speculative risk seeking or aversion and, eventually, size and type (Buy/Sell of stock negotiations, made through Direct Access Trading (DAT platforms.Subjects and methods: Twenty male traders underwent fMRI while negotiating in the Italian stock market using their own preferred trading platform.Results: At least 20 decision events were collected during each fMRI session. Risk averse traders performed a lower number of financial transactions with respect to risk seekers, with a lower average economic value, but with a higher rate of filled proposals. Activations were observed in cortical and subcortical areas traditionally involved in decision processes, including the ventrolateral and dorsolateral prefrontal cortex (vlPFC, dlPFC, the posterior parietal cortex (PPC, the nucleus accumbens (NAcc, and dorsal striatum. Regression analysis indicated an important role of age in modulating activation of left NAcc, while traders' expertise was negatively related to activation of vlPFC. High value transactions were associated with a stronger activation of the right PPC when subjects' buy rather than sell. The success of the trading activity, based on a large number of filled transactions, was related with higher activation of vlPFC and dlPFC. Independent of chronological and professional age, traders differed in their attitude to DAT, with distinct brain activity profiles being detectable during fMRI sessions. Those subjects who described themselves as very self-confident, showed a lower or absent activation of both the caudate nucleus and the dlPFC, while more reflexive traders

  13. Proactive Interference and Directed Forgetting in Short-Term Motor Memory

    Burwitz, Leslie

    1974-01-01

    The present study was designed to test the effect of instructions to forget prior motor learning and the results were relevant to the understanding of short-term motor memory (STMM) proactive interference (PI). (Author/RK)

  14. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

    Dawson, J. A.; Guo, Y.; Robertson, J.

    2015-01-01

    Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour

  15. Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

    Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng

    2015-01-01

    A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices. Observing the resistive switching mechanism exhibited by all the samples suggested that Cu conductive filaments formed and ruptured during the set/reset process. The experimental results indicated that the endurance property failure that occurred was related to the joule heating effect. Moreover, the endurance switching cycle increased as the Cu concentration decreased. In high-temperature tests, the samples demonstrated that the operating (set/reset) voltages decreased as the temperature increased, and an Arrhenius plot was used to calculate the activation energy of the set/reset process. In addition, the samples demonstrated stable data retention properties when baked at 85 °C, but the samples with low Cu concentrations exhibited short retention times in the low-resistance state (LRS) during 125 °C tests. Therefore, Cu concentration is a crucial factor in the trade-off between the endurance and retention properties; furthermore, the Cu concentration can be easily modulated using this CS technique.

  16. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Liu, ChangLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Wang, XueJun [Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Zhang, XiuLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, XiaoLi [School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, HaiSheng, E-mail: hsxu@ecust.edu.cn [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300 (China)

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  17. Vividness of visual imagery and incidental recall of verbal cues, when phenomenological availability reflects long-term memory accessibility

    Amedeo eD'Angiulli

    2013-02-01

    Full Text Available The relationship between vivid visual mental images and unexpected recall (incidental recall was replicated, refined and extended. In Experiment 1, participants were asked to generate mental images from imagery-evoking verbal-cues (controlled on several verbal properties and then, on a trial-by-trial basis, rate the vividness of their images; thirty minutes later, participants were surprised with a task requiring free recall of the cues. Higher vividness ratings predicted better incidental recall of the cues than individual differences (whose effect was modest. Distributional analysis of image latencies through ex-Gaussian modeling showed an inverse relation between vividness and latency. However, recall was unrelated to image latency. The follow-up Experiment 2 showed that the processes underlying trial-by-trial vividness ratings are unrelated to the Vividness of Visual Imagery Questionnaire (VVIQ, as further supported by a meta-analysis of a randomly selected sample of relevant literature. The present findings suggest that vividness may act as an index of availability of long-term sensory traces, playing a non-epiphenomenal role in facilitating the access of those memories.

  18. Vividness of visual imagery and incidental recall of verbal cues, when phenomenological availability reflects long-term memory accessibility.

    D'Angiulli, Amedeo; Runge, Matthew; Faulkner, Andrew; Zakizadeh, Jila; Chan, Aldrich; Morcos, Selvana

    2013-01-01

    The relationship between vivid visual mental images and unexpected recall (incidental recall) was replicated, refined, and extended. In Experiment 1, participants were asked to generate mental images from imagery-evoking verbal cues (controlled on several verbal properties) and then, on a trial-by-trial basis, rate the vividness of their images; 30 min later, participants were surprised with a task requiring free recall of the cues. Higher vividness ratings predicted better incidental recall of the cues than individual differences (whose effect was modest). Distributional analysis of image latencies through ex-Gaussian modeling showed an inverse relation between vividness and latency. However, recall was unrelated to image latency. The follow-up Experiment 2 showed that the processes underlying trial-by-trial vividness ratings are unrelated to the Vividness of Visual Imagery Questionnaire (VVIQ), as further supported by a meta-analysis of a randomly selected sample of relevant literature. The present findings suggest that vividness may act as an index of availability of long-term sensory traces, playing a non-epiphenomenal role in facilitating the access of those memories.

  19. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

    Dawson, J. A., E-mail: jad95@cam.ac.uk; Guo, Y.; Robertson, J. [Department of Engineering, University of Cambridge, Cambridge CB2 1PZ (United Kingdom)

    2015-09-21

    Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.

  20. Fundamental criteria for the design of high-performance Josephson nondestructive readout random access memory cells and experimental confirmation

    Henkels, W.H.

    1979-01-01

    Fundamental design criteria for Josephson nondestructive readout random access memory (NDRO RAM) cells are presented, within the context of an LSI array environment. Emphasis is placed upon principles which are relevant to high performance. The criteria are elucidated via a specific design which is simulated and then experimentally evaluated in a technology with a smallest critical dimension of 5 μm. The specific cell differs from previously tested Josephson NDRO cells in several respects; namely, the cell stores only approx.8Phi 0 , employs interferometer gates and an external damping resistor, allows switching into device resonances, and eliminates the need for a special initialization cycle. The cell-selection scheme, employing triple coincidence, results in larger operating margins and smaller operating currents than have previously been achieved. The large operating margins and all basic cell design criteria were experimentally verified. The experimental interferometer gate characteristics were analyzed in detail and found to be describable by simple models. In addition, it was discovered that single flux quantum transitions in the interferometer gates could be exploited beneficially in order to enhance the insensitivity of operating margins to fabrication tolerances

  1. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Liu, ChangLi; Wang, XueJun; Zhang, XiuLi; Du, XiaoLi; Xu, HaiSheng

    2016-01-01

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  2. The Effectiveness of Transcranial Direct Current Stimulation (tDCS on Working Memory in Patients with Major Depression

    Mahboube Ebadi

    2017-08-01

    Full Text Available Abstract Background: The aim of this study was to evaluate the effectiveness of of transcranial direct current stimulation (tDCS on working memory in patients with major depression. Materials and Methods: The research method was quasi-experimental with pretest and post-test and follow-up with control group. The research population comprised female outpatient referrals to private psychiatric centers and psychological counseling centers in Tehran in the first half of 2016, They had received a diagnosis of depression by a psychiatrist at least once. Of these, 30 females were selected as a sample group with convenience sampling method and based on the criteria of inclusion and exclusion and were divided randomly into two groups , experimental (n = 15 and control (n = 15 group. The experimental group received transcranial direct current stimulation (tDCS in 10 sessions, While this intervention was not provided to the control group. The data were collected by N-BACK. Analysis of variance with repeated measurments was used to test the research hypothesis. Results: The results showed that transcranial direct current stimulation (tDCS had a significant effect on increasing working memory and the impact will continue to follow up. Conclusion: Therefore, this approach can be used to improve working memory in people with major depression.

  3. Internet Access and Usage in Improving Students' Self-Directed Learning in Indonesia Open University

    Rahardjo, Djoko; Sumardjo; Lubis, Djuara P.; Harijati, Sri Ir.

    2016-01-01

    Internet is well known nowadays, however higher distance education students who live in remote rural areas still have not been able to take advantages of this medium optimally for their learning process. For accessing the internet the students have to be available with the minimum prerequisites: the existence of adequate devices and the sufficient…

  4. Relationships between Access to Mobile Devices, Student Self-Directed Learning, and Achievement

    Bartholomew, Scott R.; Reeve, Ed; Veon, Raymond; Goodridge, Wade; Lee, Victor; Nadelson, Louis

    2017-01-01

    Today's students are growing up in a world of constant connectivity, instant information, and ever-changing technological advancements. The increasingly ubiquitous nature of mobile devices among K-12 students has led many to argue for and against the inclusion of these devices in K-12 classrooms. Arguments in favor cite instant access to…

  5. Updating appetitive memory during reconsolidation window: critical role of cue-directed behavior and amygdala central nucleus.

    Olshavsky, Megan E; Song, Bryan J; Powell, Daniel J; Jones, Carolyn E; Monfils, Marie-H; Lee, Hongjoo J

    2013-01-01

    When presented with a light cue followed by food, some rats simply approach the foodcup (Nonorienters), while others first orient to the light in addition to displaying the food-cup approach behavior (Orienters). Cue-directed orienting may reflect enhanced attentional and/or emotional processing of the cue, suggesting divergent natures of cue-information processing in Orienters and Nonorienters. The current studies investigate how differences in cue processing might manifest in appetitive memory retrieval and updating using a paradigm developed to persistently attenuate fear responses (Retrieval-extinction paradigm; Monfils et al., 2009). First, we examined whether the retrieval-extinction paradigm could attenuate appetitive responses in Orienters and Nonorienters. Next, we investigated if the appetitive memory could be updated using reversal learning (fear conditioning) during the reconsolidation window (as opposed to repeated unreinforced trials, i.e., extinction). Both extinction and new fear learning given within the reconsolidation window were effective at persistently updating the initial appetitive memory in the Orienters, but not the Nonorienters. Since conditioned orienting is mediated by the amygdala central nucleus (CeA), our final experiment examined the CeA's role in the retrieval-extinction process. Bilateral CeA lesions interfered with the retrieval-extinction paradigm-did not prevent spontaneous recovery of food-cup approach. Together, our studies demonstrate the critical role of conditioned orienting behavior and the CeA in updating appetitive memory during the reconsolidation window.

  6. Access to direct-acting antivirals for the treatment of hepatitis C in a country with limited resources.

    Marciano, S; Haddad, L; Borzi, S M; D'Amico, C; Gaite, L A; Aubone, M V; Sirotinsky, M E; Ratusnu, N; Frola, M S; Aparicio, M C; Ríos, B; Anselmo, M N; Hansen, R; De Filippi, S; Dans, C García; de Labra, L; Peche, M A; Strella, T M; Ibáñez Duran, M; García Rosales, M B; Dirchwolf, M; Galdame, O A; Gadano, A C

    2018-04-12

    To estimate the proportion of patients who access to direct-acting antivirals agents (DAAs) for the treatment of hepatitisC in Argentina and to evaluate factors associated with failure to access to treatment. We performed a cross-sectional study of DAAs prescriptions written by centers participating in the telemedicine project ECHO TM -Hospital Italiano of Buenos Aires between January 2016 and February 2017. A total of 143 consecutive prescriptions were evaluated; the global access was 70% (95% CI: 62%-77%). The only factor independently associated with failure to access to treatment was belonging to the public healthcare system [OR 4.98 (95% CI: 2.05- 12.09)] in comparison to belonging to private insurance or HMOs. Patients with hepatitisC who belong to the public healthcare system are 4 times more likely to fail to access to treatment of hepatitisC than patients with private insurance or other kind of insurance. Copyright © 2018 Asociación Mexicana de Gastroenterología. Publicado por Masson Doyma México S.A. All rights reserved.

  7. Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application

    Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2018-04-01

    We propose a new version of the post fabrication static random access memory (SRAM) self-improvement technique, which utilizes multiple stress application. It is demonstrated that, using a device matrix array (DMA) test element group (TEG) with intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) six-transistor (6T) SRAM cells fabricated by the 65 nm technology, the lowering of data retention voltage (DRV) is more effectively achieved than using the previously proposed single stress technique.

  8. The role of sleep in declarative memory consolidation--direct evidence by intracranial EEG.

    Axmacher, Nikolai; Haupt, Sven; Fernández, Guillén; Elger, Christian E; Fell, Juergen

    2008-03-01

    Two step theories of memory formation assume that an initial learning phase is followed by a consolidation stage. Memory consolidation has been suggested to occur predominantly during sleep. Very recent findings, however, suggest that important steps in memory consolidation occur also during waking state but may become saturated after some time awake. Sleep, in this model, specifically favors restoration of synaptic plasticity and accelerated memory consolidation while asleep and briefly afterwards. To distinguish between these different views, we recorded intracranial electroencephalograms from the hippocampus and rhinal cortex of human subjects while they retrieved information acquired either before or after a "nap" in the afternoon or on a control day without nap. Reaction times, hippocampal event-related potentials, and oscillatory gamma activity indicated a temporal gradient of hippocampal involvement in information retrieval on the control day, suggesting hippocampal-neocortical information transfer during waking state. On the day with nap, retrieval of recent items that were encoded briefly after the nap did not involve the hippocampus to a higher degree than retrieval of items encoded before the nap. These results suggest that sleep facilitates rapid processing through the hippocampus but is not necessary for information transfer into the neocortex per se.

  9. The role of selective attention in short-term memory and goal-directed behavior

    Vissers, M.E.

    2018-01-01

    Selective attention enables the prioritization of goal-relevant aspects of our sensory environment in order to guide our actions, or to store goal-relevant information in short-term memory. Yet, it remains largely unclear how attention prioritizes goal-relevant information. For example, selective

  10. On the Existence of Semantic Working Memory: Evidence for Direct Semantic Maintenance

    Shivde, Geeta; Anderson, Michael C.

    2011-01-01

    Despite widespread acknowledgment of the importance of online semantic maintenance, there has been astonishingly little work that clearly establishes this construct. We review the extant work relevant to short-term retention of meaning and show that, although consistent with semantic working memory, most data can be accommodated in other ways.…

  11. On dynamic selection of households for direct marketing based on Markov chain models with memory

    Otter, Pieter W.

    A simple, dynamic selection procedure is proposed, based on conditional, expected profits using Markov chain models with memory. The method is easy to apply, only frequencies and mean values have to be calculated or estimated. The method is empirically illustrated using a data set from a charitable

  12. Implicit short- and long-term memory direct our gaze in visual search

    Kruijne, Wouter; Meeter, Martijn

    2016-01-01

    Visual attention is strongly affected by the past: both by recent experience and by long-term regularities in the environment that are encoded in and retrieved from memory. In visual search, intertrial repetition of targets causes speeded response times (short-term priming). Similarly, targets that

  13. Direct evidence for a role of working memory in the attentional blink

    Akyürek, Elkan G; Hommel, Bernhard; Jolicœur, Pierre

    Theories of selective attention often have a central memory component, which is commonly thought to be limited in some way and is thereby a potential bottleneck in the attentional process. There have been only a few attempts to validate this assertion, and they have produced mixed results. This

  14. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

    Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

    2017-02-22

    Al 2 O 3 - or HfO 2 -based nanocomposite structures with embedded CoPt x nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt x NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt x NCs, ALD-derived Pt/oxide/100 cycle-CoPt x NCs/TiN/SiO 2 /Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10 2 ) of OFF/ON states, better switching endurance up to 10 4 cycles, and longer data retention over 10 5 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPt x NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPt x NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPt x NCs can effectively improve the formation of conducting filaments due to the CoPt x NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

  15. Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

    Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

    2002-01-01

    In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

  16. Soft-error tolerance and energy consumption evaluation of embedded computer with magnetic random access memory in practical systems using computer simulations

    Nebashi, Ryusuke; Sakimura, Noboru; Sugibayashi, Tadahiko

    2017-08-01

    We evaluated the soft-error tolerance and energy consumption of an embedded computer with magnetic random access memory (MRAM) using two computer simulators. One is a central processing unit (CPU) simulator of a typical embedded computer system. We simulated the radiation-induced single-event-upset (SEU) probability in a spin-transfer-torque MRAM cell and also the failure rate of a typical embedded computer due to its main memory SEU error. The other is a delay tolerant network (DTN) system simulator. It simulates the power dissipation of wireless sensor network nodes of the system using a revised CPU simulator and a network simulator. We demonstrated that the SEU effect on the embedded computer with 1 Gbit MRAM-based working memory is less than 1 failure in time (FIT). We also demonstrated that the energy consumption of the DTN sensor node with MRAM-based working memory can be reduced to 1/11. These results indicate that MRAM-based working memory enhances the disaster tolerance of embedded computers.

  17. Directed Forgetting in Direct and Indirect Tests of Memory: Seeking Evidence of Retrieval Inhibition Using Electrophysiological Measures

    Van Hooff, Johanna C.; Whitaker, T. Aisling; Ford, Ruth M.

    2009-01-01

    We investigated whether directed forgetting as elicited by the item-cueing method results solely from "differential rehearsal" of to-be-remembered vs. to-be-forgotten words or, additionally, from "inhibitory" processes that actively impair retrieval of to-be-forgotten words. During study, participants (N = 24) were instructed to remember half of a…

  18. Providing the Public with Online Access to Large Bibliographic Data Bases.

    Firschein, Oscar; Summit, Roger K.

    DIALOG, an interactive, computer-based information retrieval language, consists of a series of computer programs designed to make use of direct access memory devices in order to provide the user with a rapid means of identifying records within a specific memory bank. Using the system, a library user can be provided access to sixteen distinct and…

  19. THE DYNAMICS OF FOREIGN DIRECT INVESTMENT IN ROMANIA AFTER EU ACCESSION

    Nicoleta Rusu

    2010-12-01

    Full Text Available Identification of potential investment of the countries in the current context is one of the main important problem of the world economy because the investments, particularly foreign ones, is considered the key factor for economic growth and development. Foreign direct investments are an alternative source for financing the national economy, with a tendency in recent years of a positive effect on the Romanian economy. This paperwork highlights the role of foreign direct investment in Romania's economical growth potential, with major impact on employment, on the economic modernization, technology transfer and on the living standards. At the same time the article analyzed and highlights the contains of the current trend of foreign direct investments, structure and dynamics after Romania joined the European Union and their geographical distribution on the main development regions.

  20. Activities, self-referent memory beliefs, and cognitive performance: evidence for direct and mediated relations.

    Jopp, Daniela; Hertzog, Christopher

    2007-12-01

    In this study, the authors investigated the role of activities and self-referent memory beliefs for cognitive performance in a life-span sample. A factor analysis identified 8 activity factors, including Developmental Activities, Experiential Activities, Social Activities, Physical Activities, Technology Use, Watching Television, Games, and Crafts. A second-order general activity factor was significantly related to a general factor of cognitive function as defined by ability tests. Structural regression models suggested that prediction of cognition by activity level was partially mediated by memory beliefs, controlling for age, education, health, and depressive affect. Models adding paths from general and specific activities to aspects of crystallized intelligence suggested additional unique predictive effects for some activities. In alternative models, nonsignificant effects of beliefs on activities were detected when cognition predicted both variables, consistent with the hypothesis that beliefs derive from monitoring cognition and have no influence on activity patterns. PsycINFO Database Record (c) 2008 APA, all rights reserved.

  1. Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

    Chavent, A.; Ducruet, C.; Portemont, C.; Creuzet, C.; Alvarez-Hérault, J.; Vila, L.; Sousa, R. C.; Prejbeanu, I. L.; Dieny, B.

    2015-01-01

    This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer

  2. The role of selective attention in short-term memory and goal-directed behavior

    Vissers, M.E.

    2018-01-01

    Selective attention enables the prioritization of goal-relevant aspects of our sensory environment in order to guide our actions, or to store goal-relevant information in short-term memory. Yet, it remains largely unclear how attention prioritizes goal-relevant information. For example, selective attention may enhance processing of goal-relevant information, suppress processing of distracting information, or both. The research presented in this dissertation examined the neurophysiological mec...

  3. Neuronal activity in primate prefrontal cortex related to goal-directed behavior during auditory working memory tasks.

    Huang, Ying; Brosch, Michael

    2016-06-01

    Prefrontal cortex (PFC) has been documented to play critical roles in goal-directed behaviors, like representing goal-relevant events and working memory (WM). However, neurophysiological evidence for such roles of PFC has been obtained mainly with visual tasks but rarely with auditory tasks. In the present study, we tested roles of PFC in auditory goal-directed behaviors by recording local field potentials in the auditory region of left ventrolateral PFC while a monkey performed auditory WM tasks. The tasks consisted of multiple events and required the monkey to change its mental states to achieve the reward. The events were auditory and visual stimuli, as well as specific actions. Mental states were engaging in the tasks and holding task-relevant information in auditory WM. We found that, although based on recordings from one hemisphere in one monkey only, PFC represented multiple events that were important for achieving reward, including auditory and visual stimuli like turning on and off an LED, as well as bar touch. The responses to auditory events depended on the tasks and on the context of the tasks. This provides support for the idea that neuronal representations in PFC are flexible and can be related to the behavioral meaning of stimuli. We also found that engaging in the tasks and holding information in auditory WM were associated with persistent changes of slow potentials, both of which are essential for auditory goal-directed behaviors. Our study, on a single hemisphere in a single monkey, reveals roles of PFC in auditory goal-directed behaviors similar to those in visual goal-directed behaviors, suggesting that functions of PFC in goal-directed behaviors are probably common across the auditory and visual modality. This article is part of a Special Issue entitled SI: Auditory working memory. Copyright © 2016 Elsevier B.V. All rights reserved.

  4. Direct observation of conductive filament formation in Alq3 based organic resistive memories

    Busby, Y., E-mail: yan.busby@unamur.be; Pireaux, J.-J. [Research Center in the Physics of Matter and Radiation (PMR), Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), University of Namur, B-5000 Namur (Belgium); Nau, S.; Sax, S. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); List-Kratochvil, E. J. W. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); Institute of Solid State Physics, Graz University of Technology, A-8010 Graz (Austria); Novak, J.; Banerjee, R.; Schreiber, F. [Institute of Applied Physics, Eberhard-Karls-Universität Tübingen, D-72076 Tübingen (Germany)

    2015-08-21

    This work explores resistive switching mechanisms in non-volatile organic memory devices based on tris(8-hydroxyquinolie)aluminum (Alq{sub 3}). Advanced characterization tools are applied to investigate metal diffusion in ITO/Alq{sub 3}/Ag memory device stacks leading to conductive filament formation. The morphology of Alq{sub 3}/Ag layers as a function of the metal evaporation conditions is studied by X-ray reflectivity, while depth profile analysis with X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry is applied to characterize operational memory elements displaying reliable bistable current-voltage characteristics. 3D images of the distribution of silver inside the organic layer clearly point towards the existence of conductive filaments and allow for the identification of the initial filament formation and inactivation mechanisms during switching of the device. Initial filament formation is suggested to be driven by field assisted diffusion of silver from abundant structures formed during the top electrode evaporation, whereas thermochemical effects lead to local filament inactivation.

  5. Race perception and gaze direction differently impair visual working memory for faces: An event-related potential study.

    Sessa, Paola; Dalmaso, Mario

    2016-01-01

    Humans are amazingly experts at processing and recognizing faces, however there are moderating factors of this ability. In the present study, we used the event-related potential technique to investigate the influence of both race and gaze direction on visual working memory (i.e., VWM) face representations. In a change detection task, we orthogonally manipulated race (own-race vs. other-race faces) and eye-gaze direction (direct gaze vs. averted gaze). Participants were required to encode identities of these faces. We quantified the amount of information encoded in VWM by monitoring the amplitude of the sustained posterior contralateral negativity (SPCN) time-locked to the faces. Notably, race and eye-gaze direction differently modulated SPCN amplitude such that other-race faces elicited reduced SPCN amplitudes compared with own-race faces only when displaying a direct gaze. On the other hand, faces displaying averted gaze, independently of their race, elicited increased SPCN amplitudes compared with faces displaying direct gaze. We interpret these findings as denoting that race and eye-gaze direction affect different face processing stages.

  6. Simulation and Modeling of a New Medium Access Control Scheme for Multi-Beam Directional Networking

    2017-03-03

    Multi-beam directional systems are a novel approach to networking which leverage recent advances in physical layer technology, allowing formation of...for a programmatic method for setting up emulation experiments. Rather than hard code all of the underlying pieces for EMANE (such as the over-the-air

  7. Hydrogenation of fluoroarenes: Direct access to all-cis-(multi)fluorinated cycloalkanes.

    Wiesenfeldt, Mario P; Nairoukh, Zackaria; Li, Wei; Glorius, Frank

    2017-09-01

    All-c is -multifluorinated cycloalkanes exhibit intriguing electronic properties. In particular, they display extremely high dipole moments perpendicular to the aliphatic ring, making them highly desired motifs in material science. Very few such motifs have been prepared, as their syntheses require multistep sequences from diastereoselectively prefunctionalized precursors. Herein we report a synthetic strategy to access these valuable materials via the rhodium-cyclic (alkyl)(amino)carbene (CAAC)-catalyzed hydrogenation of readily available fluorinated arenes in hexane. This route enables the scalable single-step preparation of an abundance of multisubstituted and multifluorinated cycloalkanes, including all- cis -1,2,3,4,5,6-hexafluorocyclohexane as well as cis-configured fluorinated aliphatic heterocycles. Copyright © 2017, American Association for the Advancement of Science.

  8. Restricted-access media development for direct analysis of drugs in biofluids using capillary liquid chromatography.

    Jarmalaviciene, Reda; Kornysova, Olga; Bendokas, Vidmantas; Westerlund, Douglas; Buszewski, Boguslaw; Maruska, Audrius

    2008-07-01

    In analytical sciences the design of novel materials and stationary phases for the sample preparation and separation of analytes from biological fluids is needed. In this work we present different strategies for modification of stationary phases to produce tailored solutions for the analytical problem. In this context a novel shielded polymeric reversed-phase monolithic material was prepared in the presence of different numbers of reactive groups and concentrations of the coating polymer. Chromatographic experiments were performed using benzoic acid propyl ester in order to characterize the hydrophobicity and efficiency of the different restricted-access continuous beds prepared. Inverse size-exclusion chromatography was used for investigation of the pore structure properties of the beds. Capillary columns were applied for nanochromatography of biological fluids containing a mixture of nitrazepamum and medazepamum.

  9. Direct and Electronic Health Record Access to the Clinical Decision Support for Immunizations in the Minnesota Immunization Information System.

    Rajamani, Sripriya; Bieringer, Aaron; Wallerius, Stephanie; Jensen, Daniel; Winden, Tamara; Muscoplat, Miriam Halstead

    2016-01-01

    Immunization information systems (IIS) are population-based and confidential computerized systems maintained by public health agencies containing individual data on immunizations from participating health care providers. IIS hold comprehensive vaccination histories given across providers and over time. An important aspect to IIS is the clinical decision support for immunizations (CDSi), consisting of vaccine forecasting algorithms to determine needed immunizations. The study objective was to analyze the CDSi presentation by IIS in Minnesota (Minnesota Immunization Information Connection [MIIC]) through direct access by IIS interface and by access through electronic health records (EHRs) to outline similarities and differences. The immunization data presented were similar across the three systems examined, but with varying ability to integrate data across MIIC and EHR, which impacts immunization data reconciliation. Study findings will lead to better understanding of immunization data display, clinical decision support, and user functionalities with the ultimate goal of promoting IIS CDSi to improve vaccination rates.

  10. Battery powered thought: enhancement of attention, learning, and memory in healthy adults using transcranial direct current stimulation.

    Coffman, Brian A; Clark, Vincent P; Parasuraman, Raja

    2014-01-15

    This article reviews studies demonstrating enhancement with transcranial direct current stimulation (tDCS) of attention, learning, and memory processes in healthy adults. Given that these are fundamental cognitive functions, they may also mediate stimulation effects on other higher-order processes such as decision-making and problem solving. Although tDCS research is still young, there have been a variety of methods used and cognitive processes tested. While these different methods have resulted in seemingly contradictory results among studies, many consistent and noteworthy effects of tDCS on attention, learning, and memory have been reported. The literature suggests that although tDCS as typically applied may not be as useful for localization of function in the brain as some other methods of brain stimulation, tDCS may be particularly well-suited for practical applications involving the enhancement of attention, learning, and memory, in both healthy subjects and in clinical populations. © 2013 Elsevier Inc. All rights reserved.

  11. Design and implementation of an automatic acquisition card with direct memory incrementing intended for a multichannel analyser

    Al-Ani, Tarik Hesen

    1984-01-01

    This study presents a contribution to the implementation of a multichannel analyser, based on recent technology in order to give elaborated results to the user. This instrument will be designed using modular cards compatible with an Intel, Multi-bus System. The main purpose of this thesis consists in the study and design of the logical card establishing automatically an histogram in the memory of a micro-computer (Direct Memory Increment or DMI). This card allows the connection of up to four analog to digital converters and does the incrementing of the data in memory at the address delivered by an analog to digital Wilkinson type converter (400 MHz) designed at CEA. It allows: - 4 independent inputs working simultaneously with an average input rate of 87500 events/second for 16000 channels of 2 32 bits and with a time resolution of 1 μs; - 3 acquisition modes: histogram, multi-scaling and list; - calculation of the real and live times independently for the 4 inputs. In addition, this card provides the interfacing capability for a line printer, a sample driver and a 'mouse'. (author) [fr

  12. The cost of making an eye movement: A direct link between visual working memory and saccade execution.

    Schut, Martijn J; Van der Stoep, Nathan; Postma, Albert; Van der Stigchel, Stefan

    2017-06-01

    To facilitate visual continuity across eye movements, the visual system must presaccadically acquire information about the future foveal image. Previous studies have indicated that visual working memory (VWM) affects saccade execution. However, the reverse relation, the effect of saccade execution on VWM load is less clear. To investigate the causal link between saccade execution and VWM, we combined a VWM task and a saccade task. Participants were instructed to remember one, two, or three shapes and performed either a No Saccade-, a Single Saccade- or a Dual (corrective) Saccade-task. The results indicate that items stored in VWM are reported less accurately if a single saccade-or a dual saccade-task is performed next to retaining items in VWM. Importantly, the loss of response accuracy for items retained in VWM by performing a saccade was similar to committing an extra item to VWM. In a second experiment, we observed no cost of executing a saccade for auditory working memory performance, indicating that executing a saccade exclusively taxes the VWM system. Our results suggest that the visual system presaccadically stores the upcoming retinal image, which has a similar VWM load as committing one extra item to memory and interferes with stored VWM content. After the saccade, the visual system can retrieve this item from VWM to evaluate saccade accuracy. Our results support the idea that VWM is a system which is directly linked to saccade execution and promotes visual continuity across saccades.

  13. An analysis of periodic solutions of bi-directional associative memory networks with time-varying delays

    Cao Jinde; Jiang Qiuhao

    2004-01-01

    In this Letter, several sufficient conditions are derived for the existence and uniqueness of periodic oscillatory solution for bi-directional associative memory (BAM) networks with time-varying delays by employing a new Lyapunov functional and an elementary inequality, and all other solutions of the BAM networks converge exponentially to the unique periodic solution. These criteria are presented in terms of system parameters and have important leading significance in the design and applications of periodic neural circuits for delayed BAM. As an illustration, two numerical examples are worked out using the results obtained

  14. Direct-Acting Antivirals Improve Access to Care and Cure for Patients With HIV and Chronic HCV Infection.

    Collins, Lauren F; Chan, Austin; Zheng, Jiayin; Chow, Shein-Chung; Wilder, Julius M; Muir, Andrew J; Naggie, Susanna

    2018-01-01

    Direct-acting antivirals (DAA) as curative therapy for hepatitis C virus (HCV) infection offer >95% sustained virologic response (SVR), including in patients with human immunodeficiency virus (HIV) infection. Despite improved safety and efficacy of HCV treatment, challenges remain, including drug-drug interactions between DAA and antiretroviral therapy (ART) and restrictions on access by payers. We performed a retrospective cohort study of all HIV/HCV co-infected and HCV mono-infected patients captured in care at our institution from 2011-2015, reflecting the DAA era, to determine treatment uptake and SVR, and to elucidate barriers to accessing DAA for co-infected patients. We identified 9290 patients with HCV mono-infection and 507 with HIV/HCV co-infection. Compared to mono-infected patients, co-infected patients were younger and more likely to be male and African-American. For both groups, treatment uptake improved from the DAA/pegylated interferon (PEGIFN)-ribavirin to IFN-free DAA era. One-third of co-infected patients in the IFN-free DAA era required ART switch and nearly all remained virologically suppressed after 6 months. We observed SVR >95% for most patient subgroups including those with co-infection, prior treatment-experience, and cirrhosis. Predictors of access to DAA for co-infected patients included Caucasian race, CD4 count ≥200 cells/mm 3 , HIV virologic suppression and cirrhosis. Time to approval of DAA was longest for patients insured by Medicaid, followed by private insurance and Medicare. DAA therapy has significantly improved access to HCV treatment and high SVR is independent of HIV status. However, in order to realize cure for all, barriers and disparities in access need to be urgently addressed.

  15. Flexible, Symmetry-Directed Approach To Assembling Protein Cages (Publisher’s Version Open Access)

    2016-08-01

    construction of enzyme nanoreactors, encapsulation of protein cargos, targeted drug delivery , and polyvalent display of epitopes, where atomic-level precision...Flexible, symmetry-directed approach to assembling protein cages Aaron Sciorea, Min Sub, Philipp Koldeweyc, Joseph D. Eschweilera, Kelsey A. Diffleya...approved June 10, 2016 (received for review April 15, 2016) The assembly of individual protein subunits into large-scale symmet- rical structures is

  16. DIAGNOSTIC IMAGING IN A DIRECT-ACCESS SPORTS PHYSICAL THERAPY CLINIC: A 2-YEAR RETROSPECTIVE PRACTICE ANALYSIS.

    Crowell, Michael S; Dedekam, Erik A; Johnson, Michael R; Dembowski, Scott C; Westrick, Richard B; Goss, Donald L

    2016-10-01

    While advanced diagnostic imaging is a large contributor to the growth in health care costs, direct-access to physical therapy is associated with decreased rates of diagnostic imaging. No study has systematically evaluated with evidence-based criteria the appropriateness of advanced diagnostic imaging, including magnetic resonance imaging (MRI), when ordered by physical therapists. The primary purpose of this study was to describe the appropriateness of magnetic resonance imaging (MRI) or magnetic resonance arthrogram (MRA) exams ordered by physical therapists in a direct-access sports physical therapy clinic. Retrospective observational study of practice. Greater than 80% of advanced diagnostic imaging orders would have an American College of Radiology (ACR) Appropriateness Criteria rating of greater than 6, indicating an imaging order that is usually appropriate. A 2-year retrospective analysis identified 108 MRI/MRA examination orders from four physical therapists. A board-certified radiologist determined the appropriateness of each order based on ACR appropriateness criteria. The principal investigator and co-investigator radiologist assessed agreement between the clinical diagnosis and MRI/surgical findings. Knee (31%) and shoulder (25%) injuries were the most common. Overall, 55% of injuries were acute. The mean ACR rating was 7.7; scores from six to nine have been considered appropriate orders and higher ratings are better. The percentage of orders complying with ACR appropriateness criteria was 83.2%. Physical therapist's clinical diagnosis was confirmed by MRI/MRA findings in 64.8% of cases and was confirmed by surgical findings in 90% of cases. Physical therapists providing musculoskeletal primary care in a direct-access sports physical therapy clinic appropriately ordered advanced diagnostic imaging in over 80% of cases. Future research should prospectively compare physical therapist appropriateness and utilization to other groups of providers and

  17. Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

    Peng, Cheng-Jien

    The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could

  18. Variable Delay With Directly-Modulated R-SOA and Optical Filters for Adaptive Antenna Radio-Fiber Access

    Prince, Kamau; Presi, Marco; Chiuchiarelli, Andrea

    2009-01-01

    types of signals defined in IEEE 802.16 (WiMAX) standard for wireless networks: a 90 Mbps single-carrier signal (64-QAM at 2.4 GHz) and a 78 Mbps multitone orthogonal frequency-division multiple access (OFDMA) signal. The power budget of this configuration supports a 4-element antenna array....... on a directly-modulated reflective emiconductor amplifier (R-SOA) and exploits the interplay between transmission-line dispersion and tunable optical filtering to achieve flexible true time delay, with $2pi$ beam steering at the different antennas. The system was characterized, then successfully tested with two...

  19. Working memory capacity and controlled serial memory search.

    Mızrak, Eda; Öztekin, Ilke

    2016-08-01

    The speed-accuracy trade-off (SAT) procedure was used to investigate the relationship between working memory capacity (WMC) and the dynamics of temporal order memory retrieval. High- and low-span participants (HSs, LSs) studied sequentially presented five-item lists, followed by two probes from the study list. Participants indicated the more recent probe. Overall, accuracy was higher for HSs compared to LSs. Crucially, in contrast to previous investigations that observed no impact of WMC on speed of access to item information in memory (e.g., Öztekin & McElree, 2010), recovery of temporal order memory was slower for LSs. While accessing an item's representation in memory can be direct, recovery of relational information such as temporal order information requires a more controlled serial memory search. Collectively, these data indicate that WMC effects are particularly prominent during high demands of cognitive control, such as serial search operations necessary to access temporal order information from memory. Copyright © 2016 Elsevier B.V. All rights reserved.

  20. What is the effect of basic emotions on directed forgetting ? Investigating the role of basic emotions in memory.

    Artur Marchewka

    2016-08-01

    Full Text Available Studies presenting memory-facilitating effect of emotions typically focused on affective dimensions of arousal and valence. Little is known, however, about the extent to which stimulus-driven basic emotions could have distinct effects on memory. In the present paper we sought to examine the modulatory effect of disgust, fear and sadness on intentional remembering and forgetting using widely used item-method directed forgetting paradigm. Eighteen women underwent fMRI scanning during encoding phase in which they were asked either to remember (R or to forget (F pictures. In the test phase all previously used stimuli were re-presented together with the same number of new pictures and participants had to categorize them as old or new, irrespective of the F/R instruction. On the behavioral level we found a typical directed forgetting effect, i.e. higher recognition rates for to-be-remembered (TBR items than to-be-forgotten (TBF ones for both neutral and emotional categories. Emotional stimuli had higher recognition rate than neutral ones, while among emotional those eliciting disgust produced highest recognition, but at the same time induced more false alarms. Therefore when false alarm corrected recognition was examined the directed forgetting effect was equally strong irrespective of emotion. Additionally, even though subjects rated disgusting pictures as more arousing and negative than other picture categories, logistic regression on the item level showed that the effect of disgust on recognition memory was stronger than the effect of arousal or valence. On the neural level, ROI analyses (with valence and arousal covariates revealed that correctly recognized disgusting stimuli evoked the highest activity in the left amygdala compared to all other categories. This structure was also more activated for remembered vs. forgotten stimuli, but only in case of disgust or fear eliciting pictures. Our findings, despite several limitations, suggest that

  1. Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.

    Zhao, Qiang; Wang, Hanlin; Ni, Zhenjie; Liu, Jie; Zhen, Yonggang; Zhang, Xiaotao; Jiang, Lang; Li, Rongjin; Dong, Huanli; Hu, Wenping

    2017-09-01

    Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm 2 V -1 s -1 (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm 2 V -1 s -1 (average) for N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN 2 ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. The Changing Patterns of Foreign Direct Investment in EU Accession Countries

    Meyer, Klaus E.; Ionascu, Delia Simona; Kulawczuk, Przemyslaw

    2005-01-01

    Foreign direct investment (FDI) in Central and Eastern Europe (CEE) has been maturing as the region prepared to join the European Union (EU). Since the beginning of transition the pattern of FDI has evolved, reflecting new business strategies pursued in anticipation of EU membership. Based on first...... results from a questionnaire survey conducted in 2003 in Hungary, Lithuania and Poland, we portray the recent patterns and developments in foreign investment, the motives for investment, and managers' assessment of the local business environment. Some questions have been replicated from a study conducted...

  3. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dong Kyu; Zhang, Xixiang; Pey, Kin-Leong

    2011-01-01

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through

  4. Nanoscale memory devices

    Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

    2010-01-01

    This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

  5. Fabrication of tough epoxy with shape memory effects by UV-assisted direct-ink write printing.

    Chen, Kaijuan; Kuang, Xiao; Li, Vincent; Kang, Guozheng; Qi, H Jerry

    2018-03-07

    3D printing of epoxy-based shape memory polymers with high mechanical strength, excellent thermal stability and chemical resistance is highly desirable for practical applications. However, thermally cured epoxy in general is difficult to print directly. There have been limited numbers of successes in printing epoxy but they suffer from relatively poor mechanical properties. Here, we present an ultraviolet (UV)-assisted 3D printing of thermally cured epoxy composites with high tensile toughness via a two-stage curing approach. The ink containing UV curable resin and epoxy oligomer is used for UV-assisted direct-ink write (DIW)-based 3D printing followed by thermal curing of the part containing the epoxy oligomer. The UV curable resin forms a network by photo polymerization after the 1st stage of UV curing, which can maintain the printed architecture at an elevated temperature. The 2nd stage thermal curing of the epoxy oligomer yields an interpenetrating polymer network (IPN) composite with highly enhanced mechanical properties. It is found that the printed IPN epoxy composites enabled by the two-stage curing show isotropic mechanical properties and high tensile toughness. We demonstrated that the 3D-printed high-toughness epoxy composites show good shape memory properties. This UV-assisted DIW 3D printing via a two-stage curing method can broaden the application of 3D printing to fabricate thermoset materials with enhanced tensile toughness and tunable properties for high-performance and functional applications.

  6. Implicit short- and long-term memory direct our gaze in visual search.

    Kruijne, Wouter; Meeter, Martijn

    2016-04-01

    Visual attention is strongly affected by the past: both by recent experience and by long-term regularities in the environment that are encoded in and retrieved from memory. In visual search, intertrial repetition of targets causes speeded response times (short-term priming). Similarly, targets that are presented more often than others may facilitate search, even long after it is no longer present (long-term priming). In this study, we investigate whether such short-term priming and long-term priming depend on dissociable mechanisms. By recording eye movements while participants searched for one of two conjunction targets, we explored at what stages of visual search different forms of priming manifest. We found both long- and short- term priming effects. Long-term priming persisted long after the bias was present, and was again found even in participants who were unaware of a color bias. Short- and long-term priming affected the same stage of the task; both biased eye movements towards targets with the primed color, already starting with the first eye movement. Neither form of priming affected the response phase of a trial, but response repetition did. The results strongly suggest that both long- and short-term memory can implicitly modulate feedforward visual processing.

  7. Automatic and directed search processes in solving simple semantic-memory problems.

    Ben-Zur, H

    1989-09-01

    The cognitive processes involved in simple semantic-memory problems were investigated in four experiments. On each trial of Experiments 1 and 2, two stimulus words were presented, with the instructions to find a third word (i.e., the solution) that, when coupled with each of the stimuli, would yield two word pairs used in everyday language (e.g., surprise and birthday, for which the solution is party). The results of the two experiments indicated that informing the subject whether the solution constituted the first or the second element in the word pairs facilitated both likelihood and speed of solution attainment. In addition, solution attainment was relatively high for items based on frequently used word pairs (Experiment 1) and for items in which the stimuli appear, in everyday language, in a small number of word pairs (Experiment 2). In Experiment 3, the subjects were required to produce word pairs containing one of the two stimulus words from the items used in Experiment 2. Solution production was facilitated by rehearsing the second stimulus word of the specific item. The conclusion, supported by a post hoc analysis of the results of Experiments 2 and 3 (Experiment 4), was that indirect priming from one stimulus word may facilitate solution production from a searched word. These results are interpreted in terms of automatic and controlled processes, and their relevance to two different models for retrieval from semantic memory is discussed.

  8. A 0.18-μm 3.3 V 16 k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip

    Sheng, Ding; Zhi-Tang, Song; Bo, Liu; Min, Zhu; Xiao-Gang, Chen; Yi-Feng, Chen; Ju, Shen; Cong, Fu; Song-Lin, Feng

    2008-01-01

    Using standard 0.18-μm CMOS process and the special platform for 8-inch phase change random access memory (PCRAM), the first Chinese 16k bits PCRAM chip has been successfully achieved. A 1R1T structure has been designed for low voltage drop and low cost compared to the 1R1D structure and the BJT-switch structure. Full integration of the 16k bits PCRAM chip, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. The critical integration technology of the phase change material (PCM) fabrication and the standard CMOS process has been solved. Test results about PCM in a large-scale array have been generated for the next research of PCRAM chip

  9. Massive parallel optical pattern recognition and retrieval via a two-stage high-capacity multichannel holographic random access memory system

    Cai, Luzhong; Liu, Hua-Kuang

    2000-01-01

    The multistage holographic optical random access memory (HORAM) system reported recently by Liu et al. provides a new degree of freedom for improving storage capacity. We further present a theoretical and practical analysis of the HORAM system with experimental results. Our discussions include the system design and geometrical requirements, its applications for multichannel pattern recognition and associative memory, the 2-D and 3-D information storage capacity, and multichannel image storage and retrieval via VanderLugt correlator (VLC) filters and joint transform holograms. A series of experiments are performed to demonstrate the feasibility of the multichannel pattern recognition and image retrieval with both the VLC and joint transform correlator (JTC) architectures. The experimental results with as many as 2025 channels show good agreement with the theoretical analysis. (c) 2000 Society of Photo-Optical Instrumentation Engineers

  10. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  11. Unpacking Direct and Indirect Relationships of Short-Term Memory to Word Reading: Evidence From Korean-Speaking Children.

    Kim, Young-Suk Grace; Cho, Jeung-Ryeul; Park, Soon-Gil

    2017-08-01

    We examined the relations of short-term memory (STM), metalinguistic awareness (phonological, morphological, and orthographic awareness), and rapid automatized naming (RAN) to word reading in Korean, a language with a relatively transparent orthography. STM, metalinguistic awareness, and RAN have been shown to be important to word reading, but the nature of the relations of STM, metalinguistic awareness, and RAN to word reading has rarely been investigated. Two alternative models were fitted. In the indirect relation model, STM was hypothesized to be indirectly related to word reading via metalinguistic awareness and RAN. In the direct and indirect relations model, STM was hypothesized to be directly and indirectly related to word reading. Results from 207 beginning readers in South Korea showed that STM was directly related to word reading as well as indirectly via metalinguistic awareness and RAN. Although the direct effect of STM was relatively small (.16), the total effect incorporating the indirect effect was substantial (.42). These results suggest that STM is an important, foundational cognitive capacity that underpins metalinguistic awareness and RAN as well as word reading, and further indicate the importance of considering both direct and indirect effects of language and cognitive skills on word reading.

  12. 39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme

    Yamamoto, Yasue; Moriwaki, Shinichi; Kawasumi, Atsushi; Miyano, Shinji; Shinohara, Hirofumi

    2016-04-01

    We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at V DD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at V DD = 0.55 V. WWL-BST after read sensing scheme improves minimum operating voltage (V min) by 140 mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BST and WWL-BST has been developed using a 40 nm CMOS.

  13. Direct stimulation of angiotensin II type 2 receptor enhances spatial memory

    Jing, Fei; Mogi, Masaki; Sakata, Akiko

    2012-01-01

    We examined the possibility that direct stimulation of the angiotensin II type 2 (AT(2)) receptor by a newly generated direct AT(2) receptor agonist, Compound 21 (C21), enhances cognitive function. Treatment with C21 intraperitoneal injection for 2 weeks significantly enhanced cognitive function...

  14. Experimental study of directionally solidified ferromagnetic shape memory alloy under multi-field coupling

    Zhu, Yuping, E-mail: zhuyuping@126.com [Institute of Geophysics, China Earthquake Administration, Beijing 100081 (China); Chen, Tao; Teng, Yao [Faculty of Civil Engineering and Mechanics, Jiangsu University, Zhenjiang 212013 (China); Liu, Bingfei [Airport College, Civil Aviation University of China, Tianjin 300300 (China); Xue, Lijun [Tianjin Key Laboratory of the Design and Intelligent Control of the Advanced Mechatronical System, School of Mechanical Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2016-11-01

    Directionally solidified, polycrystalline Ni–Mn–Ga is studied in this paper. The polycrystalline Ni–Mn–Ga samples were cut at different angles to solidification direction. The magnetic field induced strain under constant stress and the temperature-induced strain under constant magnetic field during the loading–unloading cycle were measured. The experimental results show that the mechanical behavior during the loading–unloading cycle of the material is nonlinear and anisotropic. Based on the experimental results, the effects of multi-field coupling factors, such as stress, magnetic field, temperature and cutting angle on the mechanical behaviors were analyzed. Some useful conclusions were obtained, which will provide guidance for practical applications. - Highlights: • The magnetic-induced strains in different directions are tested. • The temperature-induced strains in different directions are tested. • The effects of coupling factors on directional solidification samples are studied.

  15. Frequency interleaving towards spectrally efficient directly detected optical OFDM for next-generation optical access networks.

    Mehedy, Lenin; Bakaul, Masuduzzaman; Nirmalathas, Ampalavanapillai

    2010-10-25

    In this paper, we theoretically analyze and demonstrate that spectral efficiency of a conventional direct detection based optical OFDM system (DDO-OFDM) can be improved significantly using frequency interleaving of adjacent DDO-OFDM channels where OFDM signal band of one channel occupies the spectral gap of other channel and vice versa. We show that, at optimum operating condition, the proposed technique can effectively improve the spectral efficiency of the conventional DDO-OFDM system as much as 50%. We also show that such a frequency interleaved DDO-OFDM system, with a bit rate of 48 Gb/s within 25 GHz bandwidth, achieves sufficient power budget after transmission over 25 km single mode fiber to be used in next-generation time-division-multiplexed passive optical networks (TDM-PON). Moreover, by applying 64- quadrature amplitude modulation (QAM), the system can be further scaled up to 96 Gb/s with a power budget sufficient for 1:16 split TDM-PON.

  16. Selective impairment of subcategories of long-term memory in mice with hippocampal lesions accessed by the olfactory tubing maze.

    Chaillan, F A; Marchetti, E; Soumireu-Mourat, B; Roman, F S

    2005-03-30

    A new apparatus, the olfactory tubing maze for mice, was developed recently to study learning and memory processes in mice in regard to their ethological abilities. As in humans, BALB/c mice with selective bilateral lesions of the hippocampal formation showed selective impairment of subcategories of long-term memory when tested with the olfactory tubing maze. After three learning sessions, control mice reached a high percentage of correct responses. They consistently made the olfactory-reward associations, but antero-dorsal and postero-ventral hippocampal-lesioned mice did not. However, all lesioned mice learned the paradigm and the timing of the task as fast and as well as control mice. These data suggest that the olfactory tubing maze can be used to study subcategories of memory, such as declarative and non-declarative memory, which are similar in some respects to those observed in humans. Consequently, possible memory effects of classical approaches (i.e., pharmacological or lesion studies) or genetic modifications in transgenic or gene-targeting mice can be effectively analyzed using this new apparatus.

  17. The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

    Li Da-Wei; Qin Jun-Rui; Chen Shu-Ming

    2013-01-01

    Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation. (geophysics, astronomy, and astrophysics)

  18. Information management in DNA replication modeled by directional, stochastic chains with memory

    Arias-Gonzalez, J. Ricardo

    2016-11-01

    Stochastic chains represent a key variety of phenomena in many branches of science within the context of information theory and thermodynamics. They are typically approached by a sequence of independent events or by a memoryless Markov process. Stochastic chains are of special significance to molecular biology, where genes are conveyed by linear polymers made up of molecular subunits and transferred from DNA to proteins by specialized molecular motors in the presence of errors. Here, we demonstrate that when memory is introduced, the statistics of the chain depends on the mechanism by which objects or symbols are assembled, even in the slow dynamics limit wherein friction can be neglected. To analyze these systems, we introduce a sequence-dependent partition function, investigate its properties, and compare it to the standard normalization defined by the statistical physics of ensembles. We then apply this theory to characterize the enzyme-mediated information transfer involved in DNA replication under the real, non-equilibrium conditions, reproducing measured error rates and explaining the typical 100-fold increase in fidelity that is experimentally found when proofreading and edition take place. Our model further predicts that approximately 1 kT has to be consumed to elevate fidelity in one order of magnitude. We anticipate that our results are necessary to interpret configurational order and information management in many molecular systems within biophysics, materials science, communication, and engineering.

  19. What Is the Effect of Basic Emotions on Directed Forgetting? Investigating the Role of Basic Emotions in Memory.

    Marchewka, Artur; Wypych, Marek; Michałowski, Jarosław M; Sińczuk, Marcin; Wordecha, Małgorzata; Jednoróg, Katarzyna; Nowicka, Anna

    2016-01-01

    Studies presenting memory-facilitating effect of emotions typically focused on affective dimensions of arousal and valence. Little is known, however, about the extent to which stimulus-driven basic emotions could have distinct effects on memory. In the present paper we sought to examine the modulatory effect of disgust, fear, and sadness on intentional remembering and forgetting using widely used item-method directed forgetting (DF) paradigm. Eighteen women underwent fMRI scanning during encoding phase in which they were asked either to remember (R) or to forget (F) pictures. In the test phase all previously used stimuli were re-presented together with the same number of new pictures and participants had to categorize them as old or new, irrespective of the F/R instruction. On the behavioral level we found a typical DF effect, i.e., higher recognition rates for to-be-remembered (TBR) items than to-be-forgotten (TBF) ones for both neutral and emotional categories. Emotional stimuli had higher recognition rate than neutral ones, while among emotional those eliciting disgust produced highest recognition, but at the same time induced more false alarms. Therefore, when false alarm corrected recognition was examined the DF effect was equally strong irrespective of emotion. Additionally, even though subjects rated disgusting pictures as more arousing and negative than other picture categories, logistic regression on the item level showed that the effect of disgust on recognition memory was stronger than the effect of arousal or valence. On the neural level, ROI analyses (with valence and arousal covariates) revealed that correctly recognized disgusting stimuli evoked the highest activity in the left amygdala compared to all other categories. This structure was also more activated for remembered vs. forgotten stimuli, but only in case of disgust or fear eliciting pictures. Our findings, despite several limitations, suggest that disgust have a special salience in memory

  20. Delay-dependent exponential stability analysis of bi-directional associative memory neural networks with time delay: an LMI approach

    Li Chuandong; Liao Xiaofeng; Zhang Rong

    2005-01-01

    For bi-directional associative memory (BAM) neural networks (NNs) with different constant or time-varying delays, the problems of determining the exponential stability and estimating the exponential convergence rate are investigated in this paper. An approach combining the Lyapunov-Krasovskii functional with the linear matrix inequality (LMI) is taken to study the problems, which provide bounds on the interconnection matrix and the activation functions, so as to guarantee the system's exponential stability. Some criteria for the exponential stability, which give information on the delay-dependent property, are derived. The results obtained in this paper provide one more set of easily verified guidelines for determining the exponential stability of delayed BAM (DBAM) neural networks, which are less conservative and less restrictive than the ones reported so far in the literature. Some typical examples are presented to show the application of the criteria obtained in this paper

  1. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  2. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

    2015-01-01

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

  3. Selective memory retrieval can impair and improve retrieval of other memories.

    Bäuml, Karl-Heinz T; Samenieh, Anuscheh

    2012-03-01

    Research from the past decades has shown that retrieval of a specific memory (e.g., retrieving part of a previous vacation) typically attenuates retrieval of other memories (e.g., memories for other details of the event), causing retrieval-induced forgetting. More recently, however, it has been shown that retrieval can both attenuate and aid recall of other memories (K.-H. T. Bäuml & A. Samenieh, 2010). To identify the circumstances under which retrieval aids recall, the authors examined retrieval dynamics in listwise directed forgetting, context-dependent forgetting, proactive interference, and in the absence of any induced memory impairment. They found beneficial effects of selective retrieval in listwise directed forgetting and context-dependent forgetting but detrimental effects in all the other conditions. Because context-dependent forgetting and listwise directed forgetting arguably reflect impaired context access, the results suggest that memory retrieval aids recall of memories that are subject to impaired context access but attenuates recall in the absence of such circumstances. The findings are consistent with a 2-factor account of memory retrieval and suggest the existence of 2 faces of memory retrieval. 2012 APA, all rights reserved

  4. Loss of object recognition memory produced by extended access to methamphetamine self-administration is reversed by positive allosteric modulation of metabotropic glutamate receptor 5.

    Reichel, Carmela M; Schwendt, Marek; McGinty, Jacqueline F; Olive, M Foster; See, Ronald E

    2011-03-01

    Chronic methamphetamine (meth) abuse can lead to persisting cognitive deficits. Here, we utilized a long-access meth self-administration (SA) protocol to assess recognition memory and metabotropic glutamate receptor (mGluR) expression, and the possible reversal of cognitive impairments with the mGluR5 allosteric modulator, 3-cyano-N-(1,3-diphenyl-1H-pyrazol-5-yl) benzamide (CDPPB). Male, Long-Evans rats self-administered i.v. meth (0.02 mg/infusion) on an FR1 schedule of reinforcement or received yoked-saline infusions. After seven daily 1-h sessions, rats were switched to 6-h daily sessions for 14 days, and then underwent drug abstinence. Rats were tested for object recognition memory at 1 week after meth SA at 90 min and 24 h retention intervals. In a separate experiment, rats underwent the same protocol, but received either vehicle or CDPPB (30 mg/kg) after familiarization. Rats were killed on day 8 or 14 post-SA and brain tissue was obtained. Meth intake escalated over the extended access period. Additionally, meth-experienced rats showed deficits in both short- and long-term recognition memory, demonstrated by a lack of novel object exploration. The deficit at 90 min was reversed by CDPPB treatment. On day 8, meth intake during SA negatively correlated with mGluR expression in the perirhinal and prefrontal cortex, and mGluR5 receptor expression was decreased 14 days after discontinuation of meth. This effect was specific to mGluR5 levels in the perirhinal cortex, as no differences were identified in the hippocampus or in mGluR2/3 receptors. These results from a clinically-relevant animal model of addiction suggest that mGluR5 receptor modulation may be a potential treatment of cognitive dysfunction in meth addiction.

  5. Direct and indirect patient costs of dermatology clinic visits and their impact on access to care and provider preference.

    Rothstein, Brooke E; Gonzalez, Jessica; Cunningham, Kiera; Saraiya, Ami; Dornelles, Adriana C; Nguyen, Bichchau M

    2017-12-01

    The direct and indirect costs of dermatology clinic visits are infrequently quantified. Indirect costs, such as the time spent traveling to and from appointments and the value of lost earnings from time away from work, are substantial costs that often are not included in economic analyses but may pose barriers to receiving care. Due to the national shortage of dermatologists, patients may have to wait longer for appointments or travel further to see dermatologists outside of their local community, resulting in high time and travel costs for patients. Patients' lost time and earnings comprise the opportunity cost of obtaining care. A monetary value for this opportunity cost can be calculated by multiplying a patient's hourly wage by the number of hours that the patient dedicated to attending the dermatology appointment. Using a single institution survey, this study quantified the direct and indirect patient costs, including opportunity costs and time burden, associated with dermatology clinic visits to better appreciate the impact of these factors on health care access and dermatologic provider preference.

  6. Memory, microprocessor, and ASIC

    Chen, Wai-Kai

    2003-01-01

    System Timing. ROM/PROM/EPROM. SRAM. Embedded Memory. Flash Memories. Dynamic Random Access Memory. Low-Power Memory Circuits. Timing and Signal Integrity Analysis. Microprocessor Design Verification. Microprocessor Layout Method. Architecture. ASIC Design. Logic Synthesis for Field Programmable Gate Array (EPGA) Technology. Testability Concepts and DFT. ATPG and BIST. CAD Tools for BIST/DFT and Delay Faults.

  7. Transcranial direct current stimulation improves short-term memory in an animal model of attention-deficit/hyperactivity disorder.

    Leffa, Douglas Teixeira; de Souza, Andressa; Scarabelot, Vanessa Leal; Medeiros, Liciane Fernandes; de Oliveira, Carla; Grevet, Eugenio Horacio; Caumo, Wolnei; de Souza, Diogo Onofre; Rohde, Luis Augusto Paim; Torres, Iraci L S

    2016-02-01

    Attention deficit hyperactivity disorder (ADHD) is characterized by impairing levels of hyperactivity, impulsivity and inattention. However, different meta-analyses have reported disruptions in short and long-term memory in ADHD patients. Previous studies indicate that mnemonic dysfunctions might be the result of deficits in attentional circuits, probably due to ineffective dopaminergic modulation of hippocampal synaptic plasticity. In this study we aimed to evaluate the potential therapeutic effects of a neuromodulatory technique, transcranial direct current stimulation (tDCS), in short-term memory (STM) deficits presented by the spontaneous hypertensive rats (SHR), the most widely used animal model of ADHD. Adult male SHR and Wistar Kyoto rats (WKY) were subjected to a constant electrical current of 0.5 mA intensity applied on the frontal cortex for 20 min/day during 8 days. STM was evaluated with an object recognition test conducted in an open field. Exploration time and locomotion were recorded, and brain regions were dissected to determine dopamine and BDNF levels. SHR spent less time exploring the new object when compared to WKY, and tDCS improved object recognition deficits in SHR without affecting WKY performance. Locomotor activity was higher in SHR and it was not affected by tDCS. After stimulation, dopamine levels were increased in the hippocampus and striatum of both strains, while BDNF levels were increased only in the striatum of WKY. These findings suggest that tDCS on the frontal cortex might be able to improve STM deficits present in SHR, which is potentially related to dopaminergic neurotransmission in the hippocampus and striatum of those animals. Copyright © 2016. Published by Elsevier B.V.

  8. Impaired working memory for visual motion direction in schizophrenia: Absence of recency effects and association with psychopathology.

    Stäblein, Michael; Sieprath, Lore; Knöchel, Christian; Landertinger, Axel; Schmied, Claudia; Ghinea, Denisa; Mayer, Jutta S; Bittner, Robert A; Reif, Andreas; Oertel-Knöchel, Viola

    2016-09-01

    Working memory (WM) impairments are a prominent neurocognitive symptom in schizophrenia (SZ) and include deficits in memory for serial order and abnormalities in serial position effects (i.e., primacy and recency effects). Former studies predominantly focused on investigating these deficits applying verbal or static visual stimuli, but little is known about WM processes that involve dynamic visual movements. We examined WM for visual motion directions, its susceptibility to distraction and the effect of serial positioning. Twenty-three patients with paranoid SZ and 23 healthy control subjects (HC) took part in the study. We conducted an adapted Sternberg-type recognition paradigm: three random dot kinematograms (RDKs) that depicted coherent visual motion were used as stimuli and a distractor stimulus was incorporated into the task. SZ patients performed significantly worse in the WM visual motion task, when a distractor stimulus was presented. While HC showed a recency effect for later RDKs, the effect was absent in SZ patients. WM deficits were associated with more severe psychopathological symptoms, poor visual and verbal learning, and a longer duration of illness. Furthermore, SZ patients showed impairments in several other neurocognitive domains. Findings suggest that early WM processing of visual motion is susceptible to interruption and that WM impairments are associated with clinical symptoms in SZ. The absence of a recency effect is discussed in respect of 3 theoretical approaches-impaired WM for serial order information, abnormalities in early visual representations (i.e., masking effects), and deficits in later visual processing (i.e., attentional blink effect). (PsycINFO Database Record (c) 2016 APA, all rights reserved).

  9. Directed coupling in local field potentials of macaque V4 during visual short-term memory revealed by multivariate autoregressive models

    Gregor M Hoerzer

    2010-05-01

    Full Text Available Processing and storage of sensory information is based on the interaction between different neural populations rather than the isolated activity of single neurons. In order to characterize the dynamic interaction and transient cooperation of sub-circuits within a neural network, multivariate autoregressive (MVAR models have proven to be an important analysis tool. In this study, we apply directed functional coupling based on MVAR models and describe the temporal and spatial changes of functional coupling between simultaneously recorded local field potentials (LFP in extrastriate area V4 during visual memory. Specifically, we compare the strength and directional relations of coupling based on Generalized Partial Directed Coherence (GDPC measures while two rhesus monkeys perform a visual short-term memory task. In both monkeys we find increases in theta power during the memory period that are accompanied by changes in directed coupling. These interactions are most prominent in the low frequency range encompassing the theta band (3-12~Hz and, more importantly, are asymmetric between pairs of recording sites. Furthermore, we find that the degree of interaction decreases as a function of distance between electrode positions, suggesting that these interactions are a predominantly local phenomenon. Taken together, our results show that directed coupling measures based on MVAR models are able to provide important insights into the spatial and temporal formation of local functionally coupled ensembles during visual memory in V4. Moreover, our findings suggest that visual memory is accompanied not only by a temporary increase of oscillatory activity in the theta band, but by a direction-dependent change in theta coupling, which ultimately represents a change in functional connectivity within the neural circuit.

  10. Direct visualization of polarization reversal of organic ferroelectric memory transistor by using charge modulated reflectance imaging

    Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2017-11-01

    By using the charge modulated reflectance (CMR) imaging technique, charge distribution in the pentacene organic field-effect transistor (OFET) with a ferroelectric gate insulator [P(VDF-TrFE)] was investigated in terms of polarization reversal of the P(VDF-TrFE) layer. We studied the polarization reversal process and the carrier spreading process in the OFET channel. The I-V measurement showed a hysteresis behavior caused by the spontaneous polarization of P(VDF-TrFE), but the hysteresis I-V curve changes depending on the applied drain bias, possibly due to the gradual shift of the polarization reversal position in the OFET channel. CMR imaging visualized the gradual shift of the polarization reversal position and showed that the electrostatic field formed by the polarization of P(VDF-TrFE) contributes to hole and electron injection into the pentacene layer and the carrier distribution is significantly dependent on the direction of the polarization. The polarization reversal position in the channel region is governed by the electrostatic potential, and it happens where the potential reaches the coercive voltage of P(VDF-TrFE). The transmission line model developed on the basis of the Maxwell-Wagner effect element analysis well accounts for this polarization reversal process in the OFET channel.

  11. The Eye Gaze Direction of an Observed Person Can Bias Perception, Memory, and Attention in Adolescents with and without Autism Spectrum Disorder

    Freeth, M.; Ropar, D.; Chapman, P.; Mitchell, P.

    2010-01-01

    The reported experiments aimed to investigate whether a person and his or her gaze direction presented in the context of a naturalistic scene cause perception, memory, and attention to be biased in typically developing adolescents and high-functioning adolescents with autism spectrum disorder (ASD). A novel computerized image manipulation program…

  12. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    Kim, Hee-Dong, E-mail: khd0708@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Yun, Min Ju [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Kim, Kyeong Heon [School of Electrical Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 163-701 (Korea, Republic of); Kim, Sungho, E-mail: sungho85.kim@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of)

    2016-08-05

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN{sub x}) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10{sup 3} in positive bias region and 5 × 10{sup 5} in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10{sup 4} s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10{sup 2} at 85 °C to ∼10{sup 3} at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN{sub x} films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN{sub x}-based RRAM cells have investigated. • Oxygen doping concentration within ZrN{sub x} is optimized using working pressure of sputter. • Long retention time were observed.

  13. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    Kim, Hee-Dong; Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho

    2016-01-01

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN_x) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10"3 in positive bias region and 5 × 10"5 in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10"4 s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10"2 at 85 °C to ∼10"3 at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN_x films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN_x-based RRAM cells have investigated. • Oxygen doping concentration within ZrN_x is optimized using working pressure of sputter. • Long retention time were observed.

  14. Fatigue - but not mTBI history, PTSD, or sleep quality - directly contributes to reduced prospective memory performance in Iraq and Afghanistan era Veterans.

    Rau, Holly K; Hendrickson, Rebecca; Roggenkamp, Hannah C; Peterson, Sarah; Parmenter, Brett; Cook, David G; Peskind, Elaine; Pagulayan, Kathleen F

    2017-10-13

    Memory problems that affect daily functioning are a frequent complaint among Veterans reporting a history of repetitive mild traumatic brain injury (mTBI), especially in cohorts with comorbid PTSD. Here, we test the degree to which subjective sleep impairment and daytime fatigue account for the association of PTSD and self-reported mTBI history with prospective memory. 82 Veterans with and without personal history of repeated blast-related mTBI during deployment were administered the Clinician Administered PTSD Scale (CAPS), Memory for Intentions Test (MIST), Patient Health Questionnaire-9 (PHQ-9), Neurobehavioral Symptom Inventory (NSI), and the Pittsburgh Sleep Quality Index (PSQI). Relationships between self-reported mTBI, PTSD, self-reported poor sleep and daytime fatigue, and MIST performance were modeled using partial least squares structural equation modeling (PLS-SEM). Reported daytime fatigue was strongly associated with poorer prospective memory performance. Poor subjective sleep quality was strongly and positively associated with reported daytime fatigue, but had no significant direct effect on prospective memory performance. PTSD diagnosis and self-reported mTBI history were only associated with prospective memory via their impact on subjective sleep quality and daytime fatigue. Results suggest that daytime fatigue may be a mediating factor by which both mTBI and PTSD can interfere with prospective memory. Additional attention should be given to complaints of daytime fatigue, independent of subjective sleep quality, in the clinical care of those with a self-reported history of mTBI, and/or PTSD. Further research into whether interventions that decrease daytime fatigue lead to improvement in prospective memory and subjective cognitive functioning is warranted.

  15. Racial/Ethnic Minorities Ineligible for Direct Access Colonoscopy (DAC): Identifying Patients Who Fall Through the Cracks.

    Miller, Sarah J; Sly, Jamilia R; Itzkowitz, Steven H; Jandorf, Lina

    2015-03-01

    Patients ineligible for direct access colonoscopy (DAC) are typically referred for a pre-colonoscopy consultation with gastroenterology (GI). However, the referral from primary care to GI creates the potential for patients to drop out of treatment. The primary objective of the current study was to examine the proportion of participants deemed ineligible for DAC that (1) attended an appointment with GI and (2) completed a screening colonoscopy. The second aim of the study was to examine predictors of screening colonoscopy adherence. Participants (N = 144) were average-risk patients who received a primary care referral for a screening colonoscopy and were deemed ineligible for DAC between 2008 and 2012. Following the primary care visit, participants completed a questionnaire that assessed demographics and psychological factors. Medical chart review determined whether participants completed the screening colonoscopy via the GI referral. Of the 144 participants, only 19 (13 %) completed the screening colonoscopy via the GI referral. Multiple regression analyses revealed that decisional balance was the only unique predictor of screening colonoscopy adherence. Patients deemed ineligible for DAC are highly unlikely to complete a screening colonoscopy. Interventions are needed to increase screening colonoscopy adherence in this vulnerable population.

  16. Increasing Public Awareness of Direct-to-Consumer Genetic Tests: Health Care Access, Internet Use, and Population Density Correlates

    Rutten, L. J. F.; Gollust, S. E.; Naveed, S.; Moser, R. P.

    2012-01-01

    Uncertainty around the value of and appropriate regulatory models for direct-to-consumer (DTC) genetic testing underscores the importance of tracking public awareness of these services. We analyzed nationally representative, cross-sectional data from the Health Information National Trends Survey in 2008 (n=7, 674) and 2011 (n=3, 959) to assess population-level changes in awareness of DTC genetic testing in the U.S. and to explore socio demographic, health care, Internet use, and population density correlates. Overall, awareness increased significantly from 29% in 2008 to 37% in 2011. The observed increase in awareness from 2008 to 2011 remained significant (OR=1.39) even when adjusted for socio demographic variables, health care access, Internet use, and population density. Independent of survey year, the odds of awareness of DTC genetic tests were significantly higher for those aged 50-64 (OR=1.64), and 65-74 (O R=1.60); college graduates (OR=2.02 ); those with a regular source of health care (OR=1.27); those with a prior cancer diagnosis (OR=1.24); those who use the Internet (OR=1.27); and those living in urban areas ( OR=1.25). Surveillance of awareness-along with empirical data on use of and response to genetic risk information-can inform public health and policy efforts to maximize benefits and minimize risks of DTC genetic testing.

  17. Increasing Public Awareness of Direct-to-Consumer Genetic Tests: Health Care Access, Internet Use, and Population Density Correlates

    Lila J. Finney Rutten

    2012-01-01

    Full Text Available Uncertainty around the value of and appropriate regulatory models for direct-to-consumer (DTC genetic testing underscores the importance of tracking public awareness of these services. We analyzed nationally representative, cross-sectional data from the Health Information National Trends Survey in 2008 (n=7,674 and 2011 (n=3,959 to assess population-level changes in awareness of DTC genetic testing in the U.S. and to explore sociodemographic, health care, Internet use, and population density correlates. Overall, awareness increased significantly from 29% in 2008 to 37% in 2011. The observed increase in awareness from 2008 to 2011 remained significant (OR=1.39 even when adjusted for sociodemographic variables, health care access, Internet use, and population density. Independent of survey year, the odds of awareness of DTC genetic tests were significantly higher for those aged 50–64 (OR=1.64, and 65–74 (OR=1.60; college graduates (OR=2.02; those with a regular source of health care (OR=1.27; those with a prior cancer diagnosis (OR=1.24; those who use the Internet (OR=1.27; and those living in urban areas (OR=1.25. Surveillance of awareness—along with empirical data on use of and response to genetic risk information—can inform public health and policy efforts to maximize benefits and minimize risks of DTC genetic testing.

  18. Increasing Public Awareness of Direct-to-Consumer Genetic Tests: Health Care Access, Internet Use, and Population Density Correlates.

    Finney Rutten, Lila J; Gollust, Sarah E; Naveed, Sana; Moser, Richard P

    2012-01-01

    Uncertainty around the value of and appropriate regulatory models for direct-to-consumer (DTC) genetic testing underscores the importance of tracking public awareness of these services. We analyzed nationally representative, cross-sectional data from the Health Information National Trends Survey in 2008 (n = 7, 674) and 2011 (n = 3, 959) to assess population-level changes in awareness of DTC genetic testing in the U.S. and to explore sociodemographic, health care, Internet use, and population density correlates. Overall, awareness increased significantly from 29% in 2008 to 37% in 2011. The observed increase in awareness from 2008 to 2011 remained significant (OR = 1.39) even when adjusted for sociodemographic variables, health care access, Internet use, and population density. Independent of survey year, the odds of awareness of DTC genetic tests were significantly higher for those aged 50-64 (OR = 1.64), and 65-74 (OR = 1.60); college graduates (OR = 2.02); those with a regular source of health care (OR = 1.27); those with a prior cancer diagnosis (OR = 1.24); those who use the Internet (OR = 1.27); and those living in urban areas (OR = 1.25). Surveillance of awareness-along with empirical data on use of and response to genetic risk information-can inform public health and policy efforts to maximize benefits and minimize risks of DTC genetic testing.

  19. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M. [Imec, Leuven 3001 (Belgium)

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  20. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  1. All-optical clocked flip-flops and random access memory cells using the nonlinear polarization rotation effect of low-polarization-dependent semiconductor optical amplifiers

    Wang, Yongjun; Liu, Xinyu; Tian, Qinghua; Wang, Lina; Xin, Xiangjun

    2018-03-01

    Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.

  2. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-06-28

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  3. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-01-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  4. Earthquake ethics through scientific knowledge, historical memory and societal awareness: the experience of direct internet information.

    de Rubeis, Valerio; Sbarra, Paola; Sebaste, Beppe; Tosi, Patrizia

    2013-04-01

    The experience of collection of data on earthquake effects and diffusion of information to people, carried on through the site "haisentitoilterremoto.it" (didyoufeelit) managed by the Istituto Nazionale di Geofisica e Vulcanologia (INGV), has evidenced a constantly growing interest by Italian citizens. Started in 2007, the site has collected more than 520,000 compiled intensity questionnaires, producing intensity maps of almost 6,000 earthquakes. One of the most peculiar feature of this experience is constituted by a bi-directional information exchange. Every person can record observed effects of the earthquake and, at the same time, look at the generated maps. Seismologists, on the other side, can find each earthquake described in real time through its effects on the whole territory. In this way people, giving punctual information, receive global information from the community, mediated and interpreted by seismological knowledge. The relationship amongst seismologists, mass media and civil society is, thus, deep and rich. The presence of almost 20,000 permanent subscribers distributed on the whole Italian territory, alerted in case of earthquake, has reinforced the participation: the subscriber is constantly informed by the seismologists, through e-mail, about events occurred in his-her area, even if with very small magnitude. The "alert" service provides the possibility to remember that earthquakes are a phenomenon continuously present, on the other hand it shows that high magnitude events are very rare. This kind of information is helpful as it is fully complementary to that one given by media. We analyze the effects of our activity on society and mass media. The knowledge of seismic phenomena is present in each person, having roots on fear, idea of death and destruction, often with the deep belief of very rare occurrence. This position feeds refusal and repression. When a strong earthquake occurs, surprise immediately changes into shock and desperation. A

  5. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  6. Measuring autobiographical fluency in the self-memory system.

    Rathbone, Clare J; Moulin, Chris J A

    2014-01-01

    Autobiographical memory is widely considered to be fundamentally related to concepts of self and identity. However, few studies have sought to test models of self and memory directly using experimental designs. Using a novel autobiographical fluency paradigm, the present study investigated memory accessibility for different levels of self-related knowledge. Forty participants generated 20 "I am" statements about themselves, from which the 1st, 5th, 10th, 15th, and 20th were used as cues in a two-minute autobiographical fluency task. The most salient aspects of the self, measured by both serial position and ratings of personal significance, were associated with more accessible sets of autobiographical memories. This finding supports theories that view the self as a powerful organizational structure in memory. Results are discussed with reference to models of self and memory.

  7. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

    Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

    2017-03-29

    A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

  8. Memory Dysfunction

    Matthews, Brandy R.

    2015-01-01

    Purpose of Review: This article highlights the dissociable human memory systems of episodic, semantic, and procedural memory in the context of neurologic illnesses known to adversely affect specific neuroanatomic structures relevant to each memory system. Recent Findings: Advances in functional neuroimaging and refinement of neuropsychological and bedside assessment tools continue to support a model of multiple memory systems that are distinct yet complementary and to support the potential for one system to be engaged as a compensatory strategy when a counterpart system fails. Summary: Episodic memory, the ability to recall personal episodes, is the subtype of memory most often perceived as dysfunctional by patients and informants. Medial temporal lobe structures, especially the hippocampal formation and associated cortical and subcortical structures, are most often associated with episodic memory loss. Episodic memory dysfunction may present acutely, as in concussion; transiently, as in transient global amnesia (TGA); subacutely, as in thiamine deficiency; or chronically, as in Alzheimer disease. Semantic memory refers to acquired knowledge about the world. Anterior and inferior temporal lobe structures are most often associated with semantic memory loss. The semantic variant of primary progressive aphasia (svPPA) is the paradigmatic disorder resulting in predominant semantic memory dysfunction. Working memory, associated with frontal lobe function, is the active maintenance of information in the mind that can be potentially manipulated to complete goal-directed tasks. Procedural memory, the ability to learn skills that become automatic, involves the basal ganglia, cerebellum, and supplementary motor cortex. Parkinson disease and related disorders result in procedural memory deficits. Most memory concerns warrant bedside cognitive or neuropsychological evaluation and neuroimaging to assess for specific neuropathologies and guide treatment. PMID:26039844

  9. CURRENT DIRECTION, ICE - MOVEMENT - DIRECTION and other data from DRIFTING PLATFORM in the NW Atlantic from 1992-05-01 to 1993-06-13 (NODC Accession 9300136)

    National Oceanic and Atmospheric Administration, Department of Commerce — The drifting buoy data in this accession was collected over a one year period from bouys deployed by Science Applications, Inc., Raleigh NC in NW Atlantic (limit-40...

  10. CURRENT DIRECTION, ICE - MOVEMENT - DIRECTION and other data from DRIFTING PLATFORM from 1976-04-05 to 1991-10-16 (NODC Accession 9300195)

    National Oceanic and Atmospheric Administration, Department of Commerce — The drifting buoy data in this accession was collected from 120 stations over 15 year period by US Coast Guard, Groton, CT. The data was collected between April 5,...

  11. CURRENT DIRECTION, ICE - MOVEMENT - DIRECTION and other data from DRIFTING PLATFORM in the NW Atlantic from 1993-06-10 to 1993-09-23 (NODC Accession 9400065)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Global Positioning System (GPS) tracked drifting buoy data in this accession was collected in NW Atlantic (limit-40 W) between June 10, 1993 and September 23,...

  12. ACCESS - A Science and Engineering Assessment of Space Coronagraph Concepts for the Direct Imaging and Spectroscopy of Exoplanetary Systems

    Trauger, John

    2008-01-01

    Topics include and overview, science objectives, study objectives, coronagraph types, metrics, ACCESS observatory, laboratory validations, and summary. Individual slides examine ACCESS engineering approach, ACCESS gamut of coronagraph types, coronagraph metrics, ACCESS Discovery Space, coronagraph optical layout, wavefront control on the "level playing field", deformable mirror development for HCIT, laboratory testbed demonstrations, high contract imaging with the HCIT, laboratory coronagraph contrast and stability, model validation and performance predictions, HCIT coronagraph optical layout, Lyot coronagraph on the HCIT, pupil mapping (PIAA), shaped pupils, and vortex phase mask experiments on the HCIT.

  13. Restricted access carbon nanotubes for direct extraction of cadmium from human serum samples followed by atomic absorption spectrometry analysis.

    Barbosa, Adriano F; Barbosa, Valéria M P; Bettini, Jefferson; Luccas, Pedro O; Figueiredo, Eduardo C

    2015-01-01

    In this paper, we propose a new sorbent that is able to extract metal ions directly from untreated biological fluids, simultaneously excluding all proteins from these samples. The sorbent was obtained through the modification of carbon nanotubes (CNTs) with an external bovine serum albumin (BSA) layer, resulting in restricted access carbon nanotubes (RACNTs). The BSA layer was fixed through the interconnection between the amine groups of the BSA using glutaraldehyde as cross-linker. When a protein sample is percolated through a cartridge containing RACNTs and the sample pH is higher than the isoelectric point of the proteins, both proteins from the sample and the BSA layer are negatively ionized. Thus, an electrostatic repulsion prevents the interaction between the proteins from the sample on the RACNTs surface. At the same time, metal ions are adsorbed in the CNTs (core) after their passage through the chains of proteins. The Cd(2+) ion was selected for a proof-of-principle case to test the suitability of the RACNTs due to its toxicological relevance. RACNTs were able to extract Cd(2+) and exclude almost 100% of the proteins from the human serum samples in an online solid-phase extraction system coupled with thermospray flame furnace atomic absorption spectrometry. The limits of detection and quantification were 0.24 and 0.80 μg L(-1), respectively. The sampling frequency was 8.6h(-1), and the intra- and inter-day precisions at the 0.80, 15.0, and 30.0 μg L(-1) Cd(2+) levels were all lower than 10.1% (RSD). The recoveries obtained for human blood serum samples fortified with Cd(2+) ranged from 85.0% to 112.0%. The method was successfully applied to analyze Cd(2+) directly from six human blood serum samples without any pretreatment, and the observed concentrations ranged from

  14. Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

    Cabout, T.; Buckley, J.; Cagli, C.; Jousseaume, V.; Nodin, J.-F.; Salvo, B. de; Bocquet, M.; Muller, Ch.

    2013-01-01

    This paper deals with the role of platinum or titanium–titanium nitride electrodes on variability of resistive switching characteristics and electrical performances of HfO 2 -based memory elements. Capacitor-like Pt/HfO 2 (10 nm)/Pt and Ti/HfO 2 (10 nm)/TiN structures were fabricated on top of a tungsten pillar bottom electrode and integrated in-between two interconnect metal lines. First, quasi-static measurements were performed to apprehend the role of electrodes on electroforming, set and reset operations and their corresponding switching parameters. Memory elements with Pt as top and bottom electrodes exhibited a non-polar behavior with sharp decrease of current during reset operation while Ti/HfO 2 /TiN capacitors showed a bipolar switching behavior, with a gradual reset. In a second step, statistical distributions of switching parameters (voltage and resistance) were extracted from data obtained on few hundreds of capacitors. Even if the resistance in low resistive state and reset voltage was found to be comparable for both types of electrodes, the progressive reset operation observed on samples with Ti/TiN electrodes led to a lower variability of resistance in high resistive state and concomitantly of set voltage. In addition Ti–TiN electrodes enabled gaining: (i) lower forming and set voltages with significantly narrower capacitor-to-capacitor distributions; (ii) a better data retention capability (10 years at 65 °C instead of 10 years at 50 °C for Pt electrodes); (iii) satisfactory dynamic performances with lower set and reset voltages for ramp speed ranging from 10 −2 to 10 7 V/s. The significant improvement of switching behavior with Ti–TiN electrodes is mainly attributed to the formation of a native interface layer between HfO 2 oxide and Ti top electrode. - Highlights: ► HfO2 based capacitor-like structures were fabricated with Pt and Ti based electrodes. ► Influence of electrode materials on switching parameter variability is assessed.

  15. A memory module for experimental data handling

    De Blois, J.

    1985-02-01

    A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory chian internal connector. The memory unit will be used in Mössbauer experiments and in thermal neutron scattering experiments.

  16. A memory module for experimental data handling

    Blois, J. de

    1985-01-01

    A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory by an internal connector. The memory unit will be used in Moessbauer experiments and in thermal neutron scattering experiments. (orig.)

  17. Single memory with multiple shift register functionality

    2010-01-01

    The present invention relates to a memory device comprising a memory (EM) having at least two predetermined register memory sections addressable by respective address ranges AS1-ASz) and at least one access port (P1-PZ) for providing access to said memory (EM). Furthermore, access control means (A)

  18. Potentiation of motor sub-networks for motor control but not working memory: Interaction of dACC and SMA revealed by resting-state directed functional connectivity

    Diwadkar, Vaibhav A.; Asemi, Avisa; Burgess, Ashley; Chowdury, Asadur; Bressler, Steven L.

    2017-01-01

    The dorsal Anterior Cingulate Cortex (dACC) and the Supplementary Motor Area (SMA) are known to interact during motor coordination behavior. We previously discovered that the directional influences underlying this interaction in a visuo-motor coordination task are asymmetric, with the dACC→SMA influence being significantly greater than that in the reverse direction. To assess the specificity of this effect, here we undertook an analysis of the interaction between dACC and SMA in two distinct contexts. In addition to the motor coordination task, we also assessed these effects during a (n-back) working memory task. We applied directed functional connectivity analysis to these two task paradigms, and also to the rest condition of each paradigm, in which rest blocks were interspersed with task blocks. We report here that the previously known asymmetric interaction between dACC and SMA, with dACC→SMA dominating, was significantly larger in the motor coordination task than the memory task. Moreover the asymmetry between dACC and SMA was reversed during the rest condition of the motor coordination task, but not of the working memory task. In sum, the dACC→SMA influence was significantly greater in the motor task than the memory task condition, and the SMA→dACC influence was significantly greater in the motor rest than the memory rest condition. We interpret these results as suggesting that the potentiation of motor sub-networks during the motor rest condition supports the motor control of SMA by dACC during the active motor task condition. PMID:28278267

  19. Developmental memory capacity resources of typical children retrieving picture communication symbols using direct selection and visual linear scanning with fixed communication displays.

    Wagner, Barry T; Jackson, Heather M

    2006-02-01

    This study examined the cognitive demands of 2 selection techniques in augmentative and alternative communication (AAC), direct selection, and visual linear scanning, by determining the memory retrieval abilities of typically developing children when presented with fixed communication displays. One hundred twenty typical children from kindergarten, 1st, and 3rd grades were randomly assigned to either a direct selection or visual linear scanning group. Memory retrieval was assessed through word span using Picture Communication Symbols (PCSs). Participants were presented various numbers and arrays of PCSs and asked to retrieve them by placing identical graphic symbols on fixed communication displays with grid layouts. The results revealed that participants were able to retrieve more PCSs during direct selection than scanning. Additionally, 3rd-grade children retrieved more PCSs than kindergarten and 1st-grade children. An analysis on the type of errors during retrieval indicated that children were more successful at retrieving the correct PCSs than the designated location of those symbols on fixed communication displays. AAC practitioners should consider using direct selection over scanning whenever possible and account for anticipatory monitoring and pulses when scanning is used in the service delivery of children with little or no functional speech. Also, researchers should continue to investigate AAC selection techniques in relationship to working memory resources.

  20. FPGA Based Intelligent Co-operative Processor in Memory Architecture

    Ahmed, Zaki; Sotudeh, Reza; Hussain, Dil Muhammad Akbar

    2011-01-01

    benefits of PIM, a concept of Co-operative Intelligent Memory (CIM) was developed by the intelligent system group of University of Hertfordshire, based on the previously developed Co-operative Pseudo Intelligent Memory (CPIM). This paper provides an overview on previous works (CPIM, CIM) and realization......In a continuing effort to improve computer system performance, Processor-In-Memory (PIM) architecture has emerged as an alternative solution. PIM architecture incorporates computational units and control logic directly on the memory to provide immediate access to the data. To exploit the potential...

  1. Single event simulation for memories using accelerated ions

    Sakagawa, Y.; Shiono, N.; Mizusawa, T.; Sekiguchi, M.; Sato, K.; Sugai, I.; Hirao, Y.; Nishimura, J.; Hattori, T.

    1987-01-01

    To evaluate the error immunity of the LSI memories from cosmic rays in space, an irradiation test using accelerated heavy ions is performed. The sensitive regions for 64 K DRAM (Dynamic Random Access Memory) and 4 K SRAM (Static Random Access Memory) are determined from the irradiation test results and the design parameters of the devices. The observed errors can be classified into two types. One is the direct ionization type and the other is the recoil produced error type. Sensitive region is determined for the devices. Error rate estimation methods for both types are proposed and applied to those memories used in space. The error rate of direct ionization exceeds the recoil type by 2 or 3 orders. And the direct ionization is susceptible to shield thickness. (author)

  2. The cost of making an eye movement : A direct link between visual working memory and saccade execution

    Schut, Martijn J; Van der Stoep, Nathan; Postma, Albert; Van der Stigchel, Stefan

    2017-01-01

    To facilitate visual continuity across eye movements, the visual system must presaccadically acquire information about the future foveal image. Previous studies have indicated that visual working memory (VWM) affects saccade execution. However, the reverse relation, the effect of saccade execution

  3. Focalised stimulation using high definition transcranial direct current stimulation (HD-tDCS) to investigate declarative verbal learning and memory functioning.

    Nikolin, Stevan; Loo, Colleen K; Bai, Siwei; Dokos, Socrates; Martin, Donel M

    2015-08-15

    Declarative verbal learning and memory are known to be lateralised to the dominant hemisphere and to be subserved by a network of structures, including those located in frontal and temporal regions. These structures support critical components of verbal memory, including working memory, encoding, and retrieval. Their relative functional importance in facilitating declarative verbal learning and memory, however, remains unclear. To investigate the different functional roles of these structures in subserving declarative verbal learning and memory performance by applying a more focal form of transcranial direct current stimulation, "High Definition tDCS" (HD-tDCS). Additionally, we sought to examine HD-tDCS effects and electrical field intensity distributions using computer modelling. HD-tDCS was administered to the left dorsolateral prefrontal cortex (LDLPFC), planum temporale (PT), and left medial temporal lobe (LMTL) to stimulate the hippocampus, during learning on a declarative verbal memory task. Sixteen healthy participants completed a single blind, intra-individual cross-over, sham-controlled study which used a Latin Square experimental design. Cognitive effects on working memory and sustained attention were additionally examined. HD-tDCS to the LDLPFC significantly improved the rate of verbal learning (p=0.03, η(2)=0.29) and speed of responding during working memory performance (p=0.02, η(2)=0.35), but not accuracy (p=0.12, η(2)=0.16). No effect of tDCS on verbal learning, retention, or retrieval was found for stimulation targeted to the LMTL or the PT. Secondary analyses revealed that LMTL stimulation resulted in increased recency (p=0.02, η(2)=0.31) and reduced mid-list learning effects (p=0.01, η(2)=0.39), suggesting an inhibitory effect on learning. HD-tDCS to the LDLPFC facilitates the rate of verbal learning and improved efficiency of working memory may underlie performance effects. This focal method of administrating tDCS has potential for probing

  4. [Au]/[Pd] Multicatalytic Processes: Direct One-Pot Access to Benzo[ c ]chromenes and Benzo[ b ]furans

    Oonishi, Yoshihiro; Gó mez-Suá rez, Adriá n; Martin, Anthony R.; Makida, Yusuke; Slawin, Alexandra M. Z.; Nolan, Steven P.

    2014-01-01

    A new synthetic protocol that combines the advantages offered by eco-friendly solvent-free reactions and sequential transformations is reported. This strategy offers straightforward access to benzo[c]chromenes and benzo[b]furans from commercially

  5. CURRENT - DIRECTION and Other Data from UNKNOWN From World-Wide Distribution from 19390416 to 19840111 (NODC Accession 8700122)

    National Oceanic and Atmospheric Administration, Department of Commerce — This accession contains an "Atlas of Selected "Modern" Good Quality Deep Data for the World Oceans (excluding the Arctic). This atlas was compiled by Scripps and...

  6. WAVE DIRECTION and Other Data from FIXED STATIONS From Coastal Waters of California from 19750313 to 19750525 (NODC Accession 9400044)

    National Oceanic and Atmospheric Administration, Department of Commerce — The accession contains Wave Surface Data collected in Coastal Waters of California between March 13, 1975 and May 25, 1975. Water surface elevation data was...

  7. A 32-bit computer for large memory applications on the FASTBUS

    Kellner, R.; Blossom, J.M.; Hung, J.P.

    1985-01-01

    A FASTBUS based 32-bit computer is being built at Los Alamos National Laboratory for use in systems requiring large fast memory in the FASTBUS environment. A separate local execution bus allows data reduction to proceed concurrently with other FASTBUS operations. The computer, which can operate in either master or slave mode, includes the National Semiconductor NS32032 chip set with demand paged memory management, floating point slave processor, interrupt control unit, timers, and time-of-day clock. The 16.0 megabytes of random access memory are interleaved to allow windowed direct memory access on and off the FASTBUS at 80 megabytes per second

  8. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-01-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

  9. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-07-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

  10. Effects of cortisol on the memory bias for emotional words? A study in patients with depression and healthy participants using the Directed Forgetting task.

    Kuehl, Linn K; Wolf, Oliver T; Driessen, Martin; Schlosser, Nicole; Fernando, Silvia Carvalho; Wingenfeld, Katja

    2017-09-01

    Mood congruent alterations in information processing such as an impaired memory bias for emotional information and impaired inhibitory functions are prominent features of a major depressive disorder (MDD). Furthermore, in MDD patients hypothalamic-pituitary-adrenal axis dysfunctions are frequently found. Impairing effects of stress or cortisol administration on memory retrieval as well as impairing stress effects on cognitive inhibition are well documented in healthy participants. In MDD patients, no effect of acute cortisol administration on memory retrieval was found. The current study investigated the effect of acute cortisol administration on memory bias in MDD patients (N = 55) and healthy controls (N = 63) using the Directed Forgetting (DF) task with positive, negative and neutral words in a placebo controlled, double blind design. After oral administration of 10 mg hydrocortisone/placebo, the item method of the DF task was conducted. Memory performance was tested with a free recall test. Cortisol was not found to have an effect on the results of the DF task. Interestingly, there was significant impact of valence: both groups showed the highest DF score for positive words and remembered significantly more positive words that were supposed to be remembered and significantly more negative words that were supposed to be forgotten. In general, healthy participants remembered more words than the depressed patients. Still, the depressed patients were able to inhibit intentionally irrelevant information at a comparable level as the healthy controls. These results demonstrate the importance to distinguish in experimental designs between different cognitive domains such as inhibition and memory in our study. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Transcranial direct current stimulation improves long-term memory deficits in an animal model of attention-deficit/hyperactivity disorder and modulates oxidative and inflammatory parameters.

    Leffa, Douglas Teixeira; Bellaver, Bruna; Salvi, Artur Alban; de Oliveira, Carla; Caumo, Wolnei; Grevet, Eugenio Horacio; Fregni, Felipe; Quincozes-Santos, André; Rohde, Luis Augusto; Torres, Iraci L S

    2018-04-05

    Transcranial direct current stimulation (tDCS) is a technique that modulates neuronal activity and has been proposed as a potential therapeutic tool for attention-deficit/hyperactivity disorder (ADHD) symptoms. Although pilot studies have shown evidence of efficacy, its mechanism of action remains unclear. We evaluated the effects of tDCS on behavioral (working and long-term memory) and neurochemical (oxidative and inflammatory parameters) outcomes related to ADHD pathophysiology. We used the most widely accepted animal model of ADHD: spontaneously hypertensive rats (SHR). The selected behavioral outcomes have been shown to be altered in both ADHD patients and animal models, and were chosen for their relation to the proposed mechanistic action of tDCS. Adult male SHR and their control, the Wistar Kyoto rats (WKY), were subjected to 20 min of bicephalic tDCS or sham stimulation for 8 consecutive days. Working memory, long-term memory, and neurochemical outcomes were evaluated. TDCS improved long-term memory deficits presented by the SHR. No change in working memory performance was observed. In the hippocampus, tDCS increased both the production of reactive oxygen species in SHR and the levels of the antioxidant molecule glutathione in both strains. TDCS also modulated inflammatory response in the brains of WKY by downregulating pro-inflammatory cytokines. TDCS had significant effects that were specific for strain, type of behavioral and neurochemical outcomes. The long-term memory improvement in the SHR may point to a possible therapeutic role of tDCS in ADHD that does not seem to be mediated by inflammatory markers. Additionally, the anti-inflammatory effects observed in the brain of WKY after tDCS needs to be further explored. Copyright © 2018 Elsevier Inc. All rights reserved.

  12. Memory bias for emotional and illness-related words in patients with depression, anxiety and somatization disorders: an investigation with the directed forgetting task.

    Wingenfeld, Katja; Terfehr, Kirsten; Meyer, Björn; Löwe, Bernd; Spitzer, Carsten

    2013-01-01

    Memory bias to emotion- and illness-related information plays a prominent role in many mental disorders, particularly major depressive disorder, anxiety disorders and somatoform disorder. The current study aimed to investigate memory bias in different mental disorders by using neutral, emotionally valenced and illness-related word stimuli in a directed forgetting task. Seventy-eight inpatients from a university-based psychosomatic hospital participated in the study. The item method of the directed forgetting task was used, in which participants are instructed to either forget or remember each item immediately after it has been presented. Memory performance was tested with a free recall test. Overall, 36 words were presented - 6 from each of 6 categories: neutral, negative, positive, illness related ('somatoform'), depression related, and anxiety related. Three words of each category were to be remembered and 3 were to be forgotten. Independently of the patients' diagnoses, we found that most patients had relative difficulties remembering anxiety- and depression-related words, compared to neutral words, when they were instructed to remember them. By contrast, in the 'instructed forgetting' condition, patients showed deficits in the ability to forget illness-related stimuli relative to neutral material. These effects were unspecific with regard to diagnosis. The results in the 'instructed remembering' condition might be interpreted in the context of cognitive avoidance instead of a memory bias. In the 'instructed forgetting' condition, it appeared that illness-related words were more difficult to suppress compared to the other word types, which could explain the observed memory bias. Copyright © 2012 S. Karger AG, Basel.

  13. Starclose SE® hemostasis after 6F direct antegrade superficial femoral artery access distal to the femoral head for peripheral endovascular procedures in obese patients.

    Spiliopoulos, Stavros; Kitrou, Panagiotis; Christeas, Nikolaos; Karnabatidis, Dimitris

    2016-01-01

    Direct superficial femoral artery (SFA) antegrade puncture is a valid alternative to common femoral artery (CFA) access for peripheral vascular interventions. Data investigating vascular closure device (VCD) hemostasis of distant SFA 6F access are limited. We aimed to investigate the safety and effectiveness of the Starclose SE® VCD for hemostasis, following direct 6F antegrade SFA access distal to the femoral head. This prospective, single-center study included patients who were not suitable for CFA puncture and were scheduled to undergo peripheral endovascular interventions using direct antegrade SFA 6F access, at least 2 cm below the inferior edge of femoral head. Hemostasis was obtained with the Starclose SE® VCD (Abbott Laboratories). Primary endpoints were successful hemostasis rate and periprocedural (30-day) major complication rate. Secondary endpoint was the rate of minor complications. Clinical and Doppler ultrasound follow-up was performed at discharge and at one month. Between September 2014 and August 2015, a total of 30 patients (21 male; 70.0%) with a mean body mass index of 41.2 kg/m2 were enrolled. Mean age was 72±9 years (range, 67-88 years). Most patients suffered from critical limb ischemia (87.1%) and diabetes (61.3%). Calcifications were present in eight cases (26.6%). Reason for direct SFA puncture was obesity (100%). Successful hemostasis was achieved in 100% of the cases. No major complications were noted after one-month follow-up. Minor complications included two <5 cm hematomas (6.6%) not necessitating treatment. In this prospective study, Starclose SE® VCD was safe and effective for hemostasis of antegrade direct SFA puncture. Uncomplicated hemostasis was achieved even in cases of puncturing 2 to 7 cm below the inferior edge of the femoral head.

  14. A Survey of Phase Change Memory Systems

    夏飞; 蒋德钧; 熊劲; 孙凝晖

    2015-01-01

    As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

  15. Memory consolidation

    Takashima, A.; Bakker, I.; Schmid, H.-J.

    2016-01-01

    In order to make use of novel experiences and knowledge to guide our future behavior, we must keep large amounts of information accessible for retrieval. The memory system that stores this information needs to be flexible in order to rapidly incorporate incoming information, but also requires that

  16. Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory.

    Nho, Hyun Woo; Kim, Jong Yun; Wang, Jian; Shin, Hyun-Joon; Choi, Sung-Yool; Yoon, Tae Hyun

    2014-01-01

    Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K- and O K-edges, both the RRAM junctions and the I0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.

  17. Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.

    Arita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2015-11-27

    In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small area around the filament. With repeated switching operations and increasing operational current, the WOx/electrode interfaces became indistinct. At the same time, the resistance of the off-state gradually decreased. This is thought to be caused by Cu condensation at the interfaces because of leakage current through the area other than through the filament. This will lead to device degradation through mechanisms such as endurance failure. This is the first accelerated aging test of ReRAM achieved using in-situ TEM.

  18. Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

    Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

    2018-06-01

    Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

  19. Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

    Sasaki, Taro; Endoh, Tetsuo

    2018-04-01

    In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T–1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

  20. Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

    Li Lei; Zhou Wanting; Liu Huihua

    2012-01-01

    In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 μm technology. (author)