WorldWideScience

Sample records for diodes son application

  1. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  2. Physics and Applications of Laser Diode Chaos

    CERN Document Server

    Sciamanna, Marc

    2015-01-01

    An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  3. High Power Diode Lasers Technology and Applications

    CERN Document Server

    Bachmann, Friedrich; Poprawe, Reinhart

    2007-01-01

    In a very comprehensive way this book covers all aspects of high power diode laser technology for materials processing. Basics as well as new application oriented results obtained in a government funded national German research project are described in detail. Along the technological chain after a short introduction in the second chapter diode laser bar technology is discussed regarding structure, manufacturing technology and metrology. The third chapter illuminates all aspects of mounting and cooling, whereas chapter four gives wide spanning details on beam forming, beam guiding and beam combination, which are essential topics for incoherently coupled multi-emitter based high power diode lasers. Metrology, standards and safety aspects are the theme of chapter five. As an outcome of all the knowledge from chapter two to four various system configurations of high power diode lasers are described in chapter six; not only systems focussed on best available beam quality but especially also so called "modular" set...

  4. Laser diode initiated detonators for space applications

    Science.gov (United States)

    Ewick, David W.; Graham, J. A.; Hawley, J. D.

    1993-01-01

    Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

  5. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  6. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse spectrosc......Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse......, the obtained results clearly strengthen the application potential of diode lasers, including the biomedical field....

  7. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin;

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  8. Planar GaAs diodes for THz frequency mixing applications

    Science.gov (United States)

    Bishop, William L.; Crowe, Thomas W.; Mattauch, Robert J.; Dossal, Hasan

    1992-01-01

    Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

  9. Application of spherical micro diodes for brachytherapy dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Broisman, Andrey, E-mail: andreybr@ariel.ac.i [Medical Physics, Ariel University Center, Ariel 40700 (Israel); Shani, Gad [Biomedical Engineering, Ben Gurion University, P.O. Box 653, Beer Sheva 84105 (Israel)

    2011-03-15

    The research presented in this paper demonstrates the feasibility and the advantages of using spherical micro diodes for radiation dosimetry. The spherical symmetry of the diode response is demonstrated, compared to that of planar diodes. The application of the spherical diode described here is for radiotherapy dosimetry, particularly brachytherapy. Measurements were done in PMMA phantoms. The advantage of the spherical diode is that it can be used for radiation measurement in a 4{pi} geometry, it was demonstrated by measurements in both axial and azimuthal planes. The diodes were found to respond equally to radiation coming from all directions, directly from the source or due to scattered radiation within the medium. In the present work 1.8 mm diameter silicone diodes were used. The small size of these spherical diodes provides local dose measurement and can be used for in situ dosimetry while treatment takes place. Treatment planning correction can be made accordingly. Commercially available seeds of the isotopes I{sup 125} and Pd{sup 103} were used as radiation sources. The spherical diodes response was compared with that of planar diodes XRB generally used for UV and X-ray dosimetry, and with TLD measurements. We have also compared the measured results with Monte Carlo simulation, applying the MCNP code and with calculations shown in the TG-43 report.

  10. Advanced laser diodes for sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

    2000-01-01

    The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

  11. Diode pumped solid-state laser oscillators for spectroscopic applications

    Science.gov (United States)

    Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

    1987-01-01

    The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

  12. Blue laser diode (LD) and light emitting diode (LED) applications

    Science.gov (United States)

    Bergh, Arpad A.

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

  13. Applications of microlens-conditioned laser diode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Beach, R.J.; Emanuel, M.A.; Freitas, B.L. [and others

    1995-01-01

    The ability to condition the radiance of laser diodes using shaped-fiber cylindrical-microlens technology has dramatically increased the number of applications that can be practically engaged by diode laser arrays. Lawrence Livermore National Laboratory (LLNL) has actively pursued optical efficiency and engineering improvements in this technology in an effort to supply large radiance-conditioned laser diode array sources for its own internal programs. This effort has centered on the development of a modular integrated laser diode packaging technology with the goal of enabling the simple and flexible construction of high average power, high density, two-dimensional arrays with integrated cylindrical microlenses. Within LLNL, the principal applications of microlens-conditioned laser diode arrays are as high intensity pump sources for diode pumped solid state lasers (DPSSLs). A simple end-pumping architecture has been developed and demonstrated that allows the radiation from microlens-conditioned, two-dimensional diode array apertures to be efficiently delivered to the end of rod lasers. To date, pump powers as high as 2.5 kW have been delivered to 3 mm diameter laser rods. Such high power levels are critical for pumping solid state lasers in which the terminal laser level is a Stark level lying in the ground state manifold. Previously, such systems have often required operation of the solid state gain medium at low temperature to freeze out the terminal laser Stark level population. The authors recently developed high intensity pump sources overcome this difficulty by effectively pumping to much higher inversion levels, allowing efficient operation at or near room temperature. Because the end-pumping technology is scalable in absolute power, the number of rare-earth ions and transitions that can be effectively accessed for use in practical DPSSL systems has grown tremendously.

  14. GaAs IMPATT diodes for microstrip circuit applications.

    Science.gov (United States)

    Wisseman, W. R.; Tserng, H. Q.; Shaw, D. W.; Mcquiddy, D. N.

    1972-01-01

    GaAs IMPATT diodes with plated heat sinks are shown to be particularly well suited for microstrip circuit applications. Details of materials growth and device fabrication procedures are given, and experimental results are presented for a GaAs IMPATT microstrip oscillator operating at X band.

  15. High-power diode lasers and their direct industrial applications

    Science.gov (United States)

    Loosen, Peter; Treusch, Hans-Georg; Haas, C. R.; Gardenier, U.; Weck, Manfred; Sinnhoff, V.; Kasperowski, S.; vor dem Esche, R.

    1995-04-01

    The paper summarizes activities of the two Fraunhofer-Institutes ILT and IPT concerning the development of high-power laser-diode stacks and their direct industrial applications. With microchannel coolers in copper technology and ultra-precision machined micro-optics a stack of 330 - 400 W total power with a maximum intensity of the focused beam of 2 104 W/cm2 has been built and tested in first applications. By further improvements of the lens-fabrication and -alignment technology as well as increase of the number of stacked diodes an output power in the kW-range and intensities up to about 105 W/cm2 shall be achieved in the near future. Applications of such laser sources in surface technology, in the processing of plastics, in laser-assisted machining and in brazing are discussed.

  16. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  17. Planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths

    Science.gov (United States)

    Bishop, W. L.; Crowe, T. W.; Mattauch, R. J.; Ostdiek, P. H.

    1991-01-01

    Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.

  18. Light-emitting diodes - Their potential in biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

    2010-10-15

    The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

  19. Diode-pumped all-solid-state lasers and applications

    CERN Document Server

    Parsons-Karavassilis, D

    2002-01-01

    This thesis describes research carried out by the within the Physics Department at Imperial College that was aimed at developing novel all-solid-state laser sources and investigating potential applications of this technology. A description of the development, characterisation and application of a microjoule energy level, diode-pumped all-solid-state Cr:LiSGAF femtosecond oscillator and regenerative amplifier system is presented. The femtosecond oscillator was pumped by two commercially available laser diodes and produced an approx 80 MHz pulse train of variable pulse duration with approx 30 mW average output power and a tuning range of over approx 60 nm. This laser oscillator was used to seed a regenerative amplifier, resulting in adjustable repetition rate (single pulse to 20 kHz) approx 1 mu J picosecond pulses. These pulses were compressed to approx 150 fs using a double-pass twin-grating compressor. The amplifier's performance was investigated with respect to two different laser crystals and different pul...

  20. III-nitride based light emitting diodes and applications

    CERN Document Server

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2017-01-01

    The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

  1. Study of pseudo noise CW diode laser for ranging applications

    Science.gov (United States)

    Lee, Hyo S.; Ramaswami, Ravi

    1992-11-01

    A new Pseudo Random Noise (PN) modulated CW diode laser radar system is being developed for real time ranging of targets at both close and large distances (greater than 10 KM) to satisy a wide range of applications: from robotics to future space applications. Results from computer modeling and statistical analysis, along with some preliminary data obtained from a prototype system, are presented. The received signal is averaged for a short time to recover the target response function. It is found that even with uncooperative targets, based on the design parameters used (200-mW laser and 20-cm receiver), accurate ranging is possible up to about 15 KM, beyond which signal to noise ratio (SNR) becomes too small for real time analog detection.

  2. Qualification and Selection of Flight Diode Lasers for Space Applications

    Science.gov (United States)

    Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

    2010-01-01

    The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode

  3. III-nitride based light emitting diodes and applications

    CERN Document Server

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2013-01-01

    Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

  4. Application of Diode Laser in the Treatment of Dentine Hypersensitivity

    Science.gov (United States)

    Gojkov-Vukelic, Mirjana; Hadzic, Sanja; Zukanovic, Amila; Pasic, Enes; Pavlic, Veriva

    2016-01-01

    Introduction: Dentine hypersensitivity is characterized by acute, sharp pain arising from the exposed dentine, most commonly in response to thermal, tactile, or chemical stimuli, and which cannot be linked to any other pathological changes in the tooth or the environment. Therapy uses various impregnating agents in the form of solutions or gels and, in more recent times, laser. Aim: The aim of this research was to examine the effects of treatment of hypersensitive dental cervix with diode laser. Materials and Methods: The study included 18 patients with 82 sensitive teeth. The degree of dentine hypersensitivity was evaluated by visual analogue scale (VAS), and the treatment was carried out by application of low-power diode laser over the span of three visits, which depended on the initial sensitivity. Results: There is a significant difference in VAS values measured at the onset of treatment (baseline) and immediately after the first laser treatment (t=9.275; p=0.000), after 7 days, after the second laser treatment (14 days) (t=7.085, p=0.000), as well as after 14 days and the third laser treatment (t=5.517, p=0.000), which confirms the effectiveness of this therapeutic procedure. The results showed a reduction of hypersensitivity in response to tactile stimulus with a probe after the third treatment, even with teeth whose value on the VAS was very high at the beginning of treatment (baseline). Conclusion: Within the scope of the conducted study, laser therapy has provided extremely safe and effective results in the treatment of cervical dentine hypersensitivity.

  5. Etude de l'isolation hybride en vue de son application dans les transformateurs de puissance

    Science.gov (United States)

    Kassi, Koutoua Simon

    For nearly a century the conventional insulation (oil / cellulose complex) was the type of insulation used in the power transformers and most electrical power equipments. But the cellulose paper, the solid part of this insulation has many weaknesses. Indeed, the aging of cellulose paper in power transformers is accelerated by moisture, oxygen, metal catalysts, temperature, etc.). The risk of failures is thereby increased. Another major weakness of cellulose paper is its inability to protect the electrical transformer windings against the harmful effects of corrosive sulfur. Given all the weaknesses of cellulose paper, several studies have been conducted to evaluate the performance of aramid paper, which has better thermal properties. The aramid paper is currently used as high temperature insulation, combined with high fire point oils (synthetic and vegetable oils), mainly in electric traction transformers. The hybrid solid insulation is associated with mineral oil or with high fire point oils; it finds application in transformers of fixed and mobile substations. Manufacturing technology is controlled by manufacturers but operators of electrical networks do not have baseline data (standards) as diagnostic tools, allowing them to monitor the health/condition of the isolation in this new type of transformer. The overall objective of this research was to study the hybrid insulation and to demonstrate its potential use in power transformers. This overall objective has been subdivided into three specific objectives, namely: (i) improving the diagnostic of the condition of solid hybrid insulation and conventional solid insulation; (ii) diagnosing the condition of oils sampled from hybrid, high temperature and conventional insulation and finally (iii) investigating the ability of aramid paper and cellulose paper to protect the copper (electrical windings) against harmful effects of corrosive sulfur. In order to achieve these objectives, thermal accelerated aging were

  6. Diode-pumped Alexandrite ring laser for lidar applications

    Science.gov (United States)

    Munk, A.; Jungbluth, B.; Strotkamp, M.; Hoffmann, H.-D.; Poprawe, R.; Höffner, J.

    2016-03-01

    We present design and performance data of a diode-pumped Q-switched Alexandrite ring laser in the millijoule regime, which is longitudinally pumped by laser diode bar modules in the red spectral range. As a first step, a linear resonator was designed and characterized in qcw operation as well as in Q-switched operation. Based on these investigations, two separate linear cavities were set up, each with one Alexandrite crystal longitudinally pumped by one diode module. The two cavities are fused together and form a ring cavity which yields up to 6 mJ pulse burst energy in the qcw regime at 770 nm.

  7. Physical based Schottky barrier diode modeling for THz applications

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Michaelsen, Rasmus Schandorph;

    2013-01-01

    In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device...... temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack...

  8. Direct diode lasers and their advantages for materials processing and other applications

    Science.gov (United States)

    Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

    2015-03-01

    The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

  9. Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications

    Directory of Open Access Journals (Sweden)

    N. Harihara Krishnan

    2011-01-01

    Full Text Available This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 μs. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing and testing practices adopted to meet the desired diode characteristics and ratings.

  10. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    Energy Technology Data Exchange (ETDEWEB)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  11. Selective-area nanoheteroepitaxy for light emitting diode (LED) applications

    Science.gov (United States)

    Wildeson, Isaac H.

    generate built-in electric fields with magnitudes that are one-tenth those on the polar c-plane with the same (In,Ga)N composition. The lateral strain relaxation innate in the nanoheterostructures allows greater coherent InN incorporation in the nanopyramids as compared to thin-film heterostructures, as confirmed by electroluminescence and transmission electron microscopy. In addition to applications for light emitting diodes, selective area growth of GaN nanostructures is also important for biological and sensing applications. A process for fabricating porous GaN nanorods is presented that also relies on selective-area organometallic vapor phase epitaxy. The nanopore walls are primarily outlined by nonpolar planes, and the diameter of the nanopore can be controlled by the diameter of the opening in the dielectric template and the growth time. The lining of the nanopore walls is comprised of crystalline GaN, which makes these structures interesting for sensing, electrical and optical applications.

  12. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  13. 2 transistors + 2 diodes-based PEBB designed for general applications in power electronics

    OpenAIRE

    Nicolás Apruzzese, Joan; Rocabert Delgado, Joan; Bordonau Farrerons, José; Busquets Monge, Sergio; Alepuz Menéndez, Salvador; Martínez Velasco, Juan Antonio; Peracaula Roura, Joan

    2009-01-01

    This paper presents a new Power Electronic Building Block (PEBB) designed to facilitate the implementation of different power converter topologies. The proposed PEBB consists of two diodes and two transistors and it can be used to implement the most relevant power converter topologies, due to its modularity. The addition of the two diodes is an exclusive feature of the new PEBB, which permits to implement neutral point clamped (NPC) multilevel converters. The application of the PE...

  14. Practical applications of the diode in dental practice

    Science.gov (United States)

    Moldoveanu, Lucia E.; Odor, Alin A.

    2016-03-01

    Introduction: The use of lasers has become a practice in modern periodontology and it is a fact that the use of diodes in the dental office can bring a real benefit in periodontal surgery. Material and method: These case reports describe few of various soft tissue procedures that were performed with diode laser 940 nm (Epic 10, Biolase Inc., USA). Discussions: There are a few immediate benefits of the intervention: the "periodontal bandage" belongs to the patient, the procedure is painless, performed under a superficial anesthesia and the psychological impact on the patient, as well as the acceptance, are superior to conventional methods of dentistry. Conclusions: Diode lasers at the level of periodontium have become a significant part of the dentistry, reducing the patient's stress and giving satisfaction to practitioners as well.

  15. Evaluation of light-emitting diodes for signage applications

    Science.gov (United States)

    Freyssinier, Jean Paul; Zhou, Yutao; Ramamurthy, Vasudha; Bierman, Andrew; Bullough, John D.; Narendran, Nadarajah

    2004-01-01

    This paper outlines two parts of a study designed to evaluate the use of light-emitting diodes (LEDs) in channel-letter signs. The first part of the study evaluated the system performance of red LED signs and white LED signs against reference neon and cold-cathode signs. The results show a large difference between the actual performance and potential savings from red and white LEDs. Depending on the configuration, a red LED sign could use 20% to 60% less power than a neon sign at the same light output. The light output of the brightest white LED sign tested was 15% lower than the cold-cathode reference, but its power was 53% higher. It appears from this study that the most efficient white LED system is still 40% less efficient than the cold-cathode system tested. One area that offers a great potential for further energy savings is the acrylic diffuser of the signs. The acrylic diffusers measured absorb between 60% and 66% of the light output produced by the sign. Qualitative factors are also known to play an important role in signage systems. One of the largest issues with any new lighting technology is its acceptance by the end user. Consistency of light output and color among LEDs, even from the same manufacturing batch, and over time, are two of the major issues that also could affect the advantages of LEDs for signage applications. To evaluate different signage products and to identify the suitability of LEDs for this application, it is important to establish a criterion for brightness uniformity. Building upon this information, the second part of the study used human factors evaluations to determine a brightness-uniformity criterion for channel-letter signs. The results show that the contrast modulation between bright and dark areas within a sign seems to elicit the strongest effect on how people perceive uniformity. A strong monotonic relationship between modulation and acceptability was found in this evaluation. The effect of contrast seems to be stronger

  16. New class of compact diode pumped sub 10 fs lasers for biomedical applications

    DEFF Research Database (Denmark)

    Le, T.; Mueller, A.; Sumpf, B.;

    2016-01-01

    -laser. In this work we present an alternative method by deploying frequency-doubled IR diodes with good beam qualities to pump fs-lasers. The revolutionary approach allows choosing any pump wavelengths in the green region and avoids complicated relay optics for the diodes. For the first time we show results...... of a diode-pumped 10 fs-laser and how a single diode setup can be integrated into a 30 x 30 cm(2) fs-laser system generating sub 20 fs laser pulses with output power towards half a Watt. This technology paves the way for a new class of very compact and cost-efficient fs-lasers for life science and industrial...... applications....

  17. Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar

    Science.gov (United States)

    Choi, Seok-Gyu; Han, Min; Baek, Yong-Hyun; Ko, Dong-Sik; Baek, Tae-Jong; Lee, Sang-Jin; Kim, Jin-Ho; Lee, Seong-Dae; Kim, Mi-Ra; Chae, Yeon-Sik; Kathalingam, Adaikalam; Rhee, Jin-Koo

    2010-11-01

    In this work, we have designed and fabricated the GaAs Gunn diodes for a 94 GHz waveguide voltage controlled oscillator (VCO) which is one of the important parts in a frequency modulated continuous wave (FMCW) radar application. For fabrication of the high power GaAs Gunn diodes, we adopted a graded gap injector which enhances the output power and conversion efficiency by effectively removing the dead-zone. We have measured RF characteristics of the fabricated GaAs Gunn diodes. The operating current, oscillation frequency, and output power of the fabricated GaAs Gunn diodes are presented as a function of the anode diameters. The operating current increases with anode diameters, whereas the oscillation frequency decreases. The higher oscillation frequency was obtained from 60 µm anode diameters of the fabricated Gunn GaAs diodes and higher power was obtained from 68 µm. Also, for application of the 94 GHz FMCW radar system, we have fabricated the 94 GHz waveguide VCO. From the fabricated GaAs Gunn diodes of anode diameter of 60 µm, we have obtained the improved VCO performance.

  18. Application of spherical diodes for megavoltage photon beams dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Barbés, Benigno, E-mail: bbarbes@unav.es [Servicio de Oncología Radioterápica, Clínica Universidad de Navarra, Avda. Pío XII, 36, E-31008 Pamplona, Navarra (Spain); Azcona, Juan D. [Department of Radiation Oncology, Stanford University, Stanford, California 94305 and Servicio de Oncología Radioterápica, Clínica Universidad de Navarra, Avda. Pío XII 36, E-31008 Pamplona, Navarra (Spain); Burguete, Javier [Departamento de Física y Matemática Aplicada, Facultad de Ciencias, Universidad de Navarra, Irunlarrea 1, E-31008 Pamplona, Navarra (Spain); Martí-Climent, Josep M. [Servicio de Medicina Nuclear, Clínica Universidad de Navarra, Avda. Pío XII 36, E-31008 Pamplona, Navarra (Spain)

    2014-01-15

    Purpose: External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to performin vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. Methods: The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm{sup 2} and 20 × 20 cm{sup 2}) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. Results: The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (±0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. Conclusions: The measurements of relative dose

  19. Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

    Science.gov (United States)

    Reinl, S.

    Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

  20. Diode laser osteoperforation and its application to osteomyelitis treatment

    Science.gov (United States)

    Privalov, Valeriy A.; Krochek, Igor V.; Lappa, Alexander V.

    2001-10-01

    Laser osteoperforation, previously studied in experiment in rabbits at treatment for acute purulent osteomyelitis (Privalov V. et.al., SPIE Proc., v.3565., pp. 72-79), was applied in clinic to 36 patients with chronic purulent osteomyelitis and to 6 patients (children) with acute haematogenic osteomyelitis. Diode lasers of 805 and 980 nm wavelength were used. There was achieved full recovery in all acute cases, and stable remission in chronic cases during all the observation period (1 - 2.5 years).

  1. Interdigitated planar Schottky varactor diodes for tunable MMIC applications

    OpenAIRE

    Lucyszyn, Stepan; Green, Ged; Robertson, Ian D.

    1992-01-01

    Techniques are presented for scale modelling interdigitated Planar Schottky Varactor Diodes (PSVDs) using an equivalent circuit model. A selection of low cost GaAs devices, with variations in the finger width and number of anode fingers, have been fabricated, measured and accurately characterized - well into the millimetric frequency range. From the results, a number of useful design rules are presented for the optimal choice of interdigitated PSVD topography. With the use of these rules, a 2...

  2. Optimized high-power diode laser, laser arrays, and bars for pump applications

    Science.gov (United States)

    Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Wolf, J.; Hennig, P.

    2009-02-01

    Broad area diode laser and diode laser bars are the most efficient light sources. In comparison to solid state laser or gas laser systems the over all beam quality of the diode laser is poor. Thus most application of diode laser bars is high efficient pumping of solid state lasers converting the beam quality and scaling the power of laser systems within the kW range. The pump efficiency and the beam coupling efficiency of the diode laser pumped systems has to be increased to meet the increasing laser market demands for reduced costs. JENOPTIK Diode Lab GmbH (JDL) has optimized their high power brilliance bars to enable reliable high power operation especially, for the 9xx nm wavelength range and low far field divergences. Superior reliability with long operation time of 13,000 hours and high power operation of 200 W are demonstrated for high power bars high filling factor mounted on passively cooled heat sinks. Smaller far field divergence at high power levels requires longer cavity length and higher efficiencies in the beam coupling needs requires lower filling factors. The new high brilliance bars and arrays with 20% filling factor are showing high power operation up to 95 W and a slow axis beam divergence of less than 8° (95% power content).

  3. Advances in AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisnieski, P.; Czernecki, R.; Targowski, G.

    2016-10-01

    Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., 380nm, to the visible 530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.

  4. AlGaInN laser diode technology and systems for defence and security applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2015-10-01

    AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

  5. Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

    OpenAIRE

    Hans Lüth; Mihail Ion Lepsa; Simone Montanari; Jürgen Stock; Arno Förster

    2006-01-01

    GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimize...

  6. Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

    1999-06-01

    Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

  7. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    Energy Technology Data Exchange (ETDEWEB)

    Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

    2016-05-15

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  8. Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed

    This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs...... is presented to obtain light extraction efficiency (LEE) improvement through nano-patterning, and IQE improvement through SP-QW coupling. Considering the fabrication process aspect, dry-etching damage on the semiconductor light-emitters from the nano-patterning is also addressed. Different ion-damage treatment...

  9. JENOPTIK diode lasers and bars optimized for high-power applications in the NIR range

    Science.gov (United States)

    Zorn, M.; Hülsewede, R.; Schulze, H.; Sebastian, J.; Hennig, P.; Schröder, D.

    2010-02-01

    Laser diodes and laser bars for the high-volume wavelength ranges at 808 nm and 940 nm are available in optimized design and high quality. However, a lot of other wavelengths in the NIR are needed for specialized applications also requiring high stability, reliability and a good efficiency with a good beam quality. An efficient adaptation of the laser diode design to optimize the laser performance at the customized wavelength is highly desirable. At JENOPTIK Diode Lab (JDL) we therefore focus on a flexible and competitive laser diode design resulting in a high output power and a high efficiency at reasonable production costs. Starting from excellent laser bars at 808 nm and 940 nm laser bars with emission wavelengths around 790 nm, 830 nm, 880nm (cw) and 940 nm (pulsed operation) are developed. For 792 nm a maximum output power of 90 W and an efficiency of 55 % has been achieved with an expected lifetime of more than 15000 hours. At 825 nm a maximum efficiency of 60 % and 60 W output power for more than 20.000 h with a high degree of polarization can be presented. Changing the quantum well material for 885 nm the output power reaches 125W with 63% efficiency also for more than 25.000 hours. Laser bars for pulsed applications (quasi-cw) at 940 nm result in an output power of 500 W with an efficiency of 60 %.

  10. AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2014-10-01

    The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

  11. Application of the GRAAL model to leaching experiments with SON68 nuclear glass in initially pure water

    Energy Technology Data Exchange (ETDEWEB)

    Frugier, P., E-mail: pierre.frugier@cea.f [CEA Marcoule, DTCD/SECM/LCLT, BP 17171, 30207 Bagnols-sur-Ceze Cedex (France); Chave, T. [ICSM Site de Marcoule, DEN/MAR/ICSM/LSFC, UMR 5257, BP 17171, 30207 Bagnols-sur-Ceze Cedex (France); Gin, S. [CEA Marcoule, DTCD/SECM/LCLT, BP 17171, 30207 Bagnols-sur-Ceze Cedex (France); Lartigue, J.-E. [CEA Cadarache, DEN/CAD/DTN/SMTM/LMTE, 13108 Saint-Paul-Lez-Durance Cedex (France)

    2009-08-01

    Based on a review of the current state of knowledge concerning the aqueous alteration of SON68 nuclear glass we have proposed a mechanistic model, GRAAL (Glass Reactivity with Allowance for the Alteration Layer) [P. Frugier, S. Gin, Y. Minet, T. Chave, B. Bonin, N. Godon, J.E. Lartigue, P. Jollivet, A. Ayral, L. De Windt, G. Santarini, J. Nucl. Mater. 380 (2008) 8]. This article describes how the GRAAL model hypotheses are solved using a calculation code coupling chemistry and transport. The geochemical solution of this model combines three major phenomena: chemical equilibria in solution, water and ion transport by convection or diffusion, and element diffusion through the passivating reactive interphase. The model results are compared with experimental data for SON68 glass leached in initially pure water both in a closed system and in renewed media. The comparison shows the model very satisfactorily accounts for variations in the pH and the element concentrations in solution as a function of time, the glass surface area in contact with solution, and the solution renewal rate. This success is due to the fact that the diffusion of elements through the alteration gel is taken into account in the model. This mechanism cannot be disregarded under most experimental conditions - if only to predict the solution pH - and must therefore be an integral part of the geochemical model.

  12. White Light Emitting Diode Development for General Illumination Applications

    Energy Technology Data Exchange (ETDEWEB)

    James Ibbetson

    2006-05-01

    This report contains a summary of technical achievements during a 3-year project aimed at developing the chip and packaging technology necessary to demonstrate efficient, high flux light-emitting diode (LED) arrays using Cree's gallium nitride/silicon carbide (GaN/SiC) LED technology as the starting point. Novel chip designs and fabrication processes are described that led to high power blue LEDs that achieved 310 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 32.5% and 26.5%, respectively. When combined with phosphor, high power white LEDs with luminous output of 67 lumens and efficacy of 57 lumens per watt were also demonstrated. Advances in packaging technology are described that enabled compact, multi-chip white LED lamp modules with 800-1000 lumens output at efficacies of up to 55 lumens per watt. Lamp modules with junction-to-ambient thermal resistance as low as 1.7 C/watt have also been demonstrated.

  13. Ideal Diode Equation for Organic Heterojunctions. I. Derivation and Application

    Energy Technology Data Exchange (ETDEWEB)

    Giebink, Noel C; Wiederrecht, Gary P; Wasielewski, Michael R; Forrest, Stephen R.

    2010-10-04

    The current-voltage characteristics of organic heterojunctions (HJs) are often modeled using the generalized Shockley equation derived for inorganic diodes. However, since this description does not rigorously apply to organic semiconductor donor-acceptor (D-A) HJs, the extracted parameters lack a clear physical meaning. Here, we derive the current density-voltage (J-V) characteristic specifically for D-A HJ solar cells and show that it predicts the general dependence of dark current, open-circuit voltage (Voc) , and short-circuit current (Joc) on temperature and light intensity as well as the maximum Voc for a given D-A material pair. We propose that trap-limited recombination due to disorder at the D-A interface leads to the introduction of two temperature-dependent ideality factors and show that this describes the dark current of copper phthalocyanine/C60 and boron subphthalocyanine/C60 cells at low temperature, where fits to the generalized Shockley equation break down. We identify the polaron pair recombination rate as a key factor that determines the J-V characteristics in the dark and under illumination and provide direct measurements of this process in our companion paper II [N. C. Giebink, B. E. Lassiter, G. P. Wiederrecht, M. R. Wasielewski, and S. R. Forrest, Phys. Rev. B 82, 155306 (2010)]. These results provide a general physical framework for interpreting the J-V characteristics

  14. Adoption of Light-Emitting Diodes in Common Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Mary [Navigant Consulting, Suwanee, GA (United States); Chwastyk, Dan [Navigant Consulting, Suwanee, GA (United States)

    2013-05-01

    Report estimating LED energy savings in nine applications where LEDs compete with traditional lighting sources such as incandescent, halogen, high-pressure sodium, and certain types of fluorescent. The analysis includes indoor lamp, indoor luminaire, and outdoor luminaire applications.

  15. Adoption of Light-Emitting Diodes in Common Lighting Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Mary [Navigant, Chicago, IL (United States); Stober, Kelsey [Navigant, Chicago, IL (United States)

    2015-07-01

    Report estimating LED energy savings between 2012 and 2014 in 10 applications where LEDs competed with traditional lighting sources such as incandescent, halogen, high-pressure sodium, and fluorescent. The analysis includes indoor lamp, indoor luminaire, and outdoor luminaire applications.

  16. PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

    Directory of Open Access Journals (Sweden)

    D. A. Arkhipov

    2015-11-01

    within 1 °С. Optical schematic diagram of the laser resonator keeps the laser beam divergence not exceeding a diffraction limit more than twice under a light pump power of 100 W. We have also shown that to increase the lasing efficiency, slab multilayer dielectric coatings made of SiO2 и ZrO2 should be used. Practical Relevance. We have proposed original design of the diode pumped solid-state laser module optimizing the generation and pump modes of solid-state lasers by the temperature stabilization technique for laser diode array and by compensation of the slab aberrations. The techniques are also applicable under space conditions; that is an important factor at developing the space-based lasers.

  17. Ideal diode equation for organic heterojunctions. I. Derivation and application

    Energy Technology Data Exchange (ETDEWEB)

    Giebink, Noel C; Wiederrecht, Gary P; Wasielewski, Michael R; Forrest, Stephen R.

    2010-10-04

    The current-voltage characteristics of organic heterojunctions (HJs) are often modeled using the generalized Shockley equation derived for inorganic diodes. However, since this description does not rigorously apply to organic semiconductor donor-acceptor (D-A) HJs, the extracted parameters lack a clear physical meaning. Here, we derive the current density-voltage (J-V) characteristic specifically for D-A HJ solar cells and show that it predicts the general dependence of dark current, open-circuit voltage (V{sub oc} ) , and short-circuit current (J{sub sc} ) on temperature and light intensity as well as the maximum V{sub oc} for a given D-A material pair. We propose that trap-limited recombination due to disorder at the D-A interface leads to the introduction of two temperature-dependent ideality factors and show that this describes the dark current of copper phthalocyanine/C{sub 60} and boron subphthalocyanine/C{sub 60} cells at low temperature, where fits to the generalized Shockley equation break down. We identify the polaron pair recombination rate as a key factor that determines the J-V characteristics in the dark and under illumination and provide direct measurements of this process in our companion paper II [N. C. Giebink, B. E. Lassiter, G. P. Wiederrecht, M. R. Wasielewski, and S. R. Forrest, Phys. Rev. B 82, 155306 (2010)]. These results provide a general physical framework for interpreting the J-V characteristics and understanding the efficiency of both small molecule and polymer organic, planar and bulk HJ solar cells.

  18. Ideal diode equation for organic heterojunctions. I. Derivation and application

    Science.gov (United States)

    Giebink, N. C.; Wiederrecht, G. P.; Wasielewski, M. R.; Forrest, S. R.

    2010-10-01

    The current-voltage characteristics of organic heterojunctions (HJs) are often modeled using the generalized Shockley equation derived for inorganic diodes. However, since this description does not rigorously apply to organic semiconductor donor-acceptor (D-A) HJs, the extracted parameters lack a clear physical meaning. Here, we derive the current density-voltage (J-V) characteristic specifically for D-A HJ solar cells and show that it predicts the general dependence of dark current, open-circuit voltage (Voc) , and short-circuit current (Jsc) on temperature and light intensity as well as the maximum Voc for a given D-A material pair. We propose that trap-limited recombination due to disorder at the D-A interface leads to the introduction of two temperature-dependent ideality factors and show that this describes the dark current of copper phthalocyanine/ C60 and boron subphthalocyanine/ C60 cells at low temperature, where fits to the generalized Shockley equation break down. We identify the polaron pair recombination rate as a key factor that determines the J-V characteristics in the dark and under illumination and provide direct measurements of this process in our companion paper II [N. C. Giebink, B. E. Lassiter, G. P. Wiederrecht, M. R. Wasielewski, and S. R. Forrest, Phys. Rev. B 82, 155306 (2010)10.1103/PhysRevB.82.155306]. These results provide a general physical framework for interpreting the J-V characteristics and understanding the efficiency of both small molecule and polymer organic, planar and bulk HJ solar cells.

  19. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.

    Science.gov (United States)

    Li, Zhenhua; Wu, Jiang; Wang, Zhiming M; Fan, Dongsheng; Guo, Aqiang; Li, Shibing; Yu, Shui-Qing; Manasreh, Omar; Salamo, Gregory J

    2010-04-22

    The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  20. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

    Directory of Open Access Journals (Sweden)

    Wu Jiang

    2010-01-01

    Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  1. Watt-level red-emitting diode lasers and modules for display applications

    Science.gov (United States)

    Paschke, Katrin; Blume, Gunnar; Feise, David; Pohl, Johannes; Sumpf, Bernd

    2016-02-01

    Red-emitting lasers for display applications require high output powers and a high visibility. We demonstrate diode lasers and modules in the red spectral range based on AlGaInP with optical output powers up to 1 W and a nearly diffraction limited beam. These high-luminance light sources based on tapered lasers are well suited for laser TVs and projectors for virtual reality simulators based on the flying spot technology. Additionally, we developed diode lasers with internal distributed Bragg reflector (DBR) surface gratings. These DBR tapered lasers and master-oscillator power-amplifiers based on DBR ridge-waveguide lasers and tapered amplifiers feature high power, single mode emission with coherence lengths up to several meters, which are suitable for the next-generation 3D displays based on holography.

  2. Bipolar one diode-one resistor integration for high-density resistive memory applications.

    Science.gov (United States)

    Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

    2013-06-07

    Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.

  3. High power fiber coupled diode lasers for display and lighting applications

    Science.gov (United States)

    Drovs, Simon; Unger, Andreas; Dürsch, Sascha; Köhler, Bernd; Biesenbach, Jens

    2017-02-01

    The performance of diode lasers in the visible spectral range has been continuously improved within the last few years, which was mainly driven by the goal to replace arc lamps in cinema or home projectors. In addition, the availability of such high power visible diode lasers also enables new applications in the medical field, but also the usage as pump sources for other solid state lasers. This paper summarizes the latest developments of fiber coupled sources with output power from 1.4 W to 120 W coupled into 100 μm to 400 μm fibers in the spectral range around 405 nm and 640 nm. New developments also include the use of fiber coupled multi single emitter arrays at 450 nm, as well as very compact modules with multi-W output power.

  4. The laser and its uses: 50 years after its invention; Le laser et ses applications: 50 ans apres son invention

    Energy Technology Data Exchange (ETDEWEB)

    Besnard, P. [FOTON/ENSSAT, CNRS, 22 - Lannion (France); Favennec, P.N. [APAST, 22 - Lannion (France)

    2011-07-01

    The laser, 50 years after its invention, has become a major player in modern technologies with its efficient partner the optical fiber. This book reviews the numerous applications of laser in diverse fields such as telecommunication, metrology, optical radar, surface treatment, medicine. The last chapter is dedicated to inertial fusion through the presentation of the Megajoule laser (LMJ) project

  5. Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

    Science.gov (United States)

    Förster, Arno; Stock, Jürgen; Montanari, Simone; Lepsa, Mihail Ion; Lüth, Hans

    2006-01-01

    GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.

  6. Applicability of the SON-R 6-40 Non-verbal Intelligence Test in China%SON-R6-40非言语智力测验在中国的适用性

    Institute of Scientific and Technical Information of China (English)

    徐建平; 郭枝; 王茜; Peter Tellegen

    2014-01-01

    SON-R 6-40非言语智力测验是以非文字形式测量个体推理与空间能力的智力评估工具.研究旨在考查SON-R6-40在中国的适用性.根据全国人口分布,在中国六大行政区6至40岁年龄人群中施测了1721人,通过与荷兰/德国混合样本比较,分析该测验的跨文化等值水平.结果表明:(1)测验信度与结构跨样本一致,说明该测验在两种文化下结构等值;(2)多样本验证性因素分析证明了该测验的测量单位等值性.因此,SON-R 6-40适合在中国推广使用以及用于智力的跨文化比较研究.

  7. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ► Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ► The fabricated white LEDs show good white balance. ► CdSe QDs present well green to yellow band luminescence. ► CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  8. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  9. Fluorescent SiC and its application to white light-emitting diodes*

    Institute of Scientific and Technical Information of China (English)

    Satoshi Kamiyama; Motoaki Iwaya; Tetsuya Takeuchi; Isamu Akasaki; Mikael Syv(a)j(a)rvi; Rositza Yakimova

    2011-01-01

    Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations,has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination.This material can be used as a substrate for a nearUV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.

  10. Computer modeling characterization, and applications of Gallium Arsenide Gunn diodes in radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    El- Basit, Wafaa Abd; El-Ghanam, Safaa Mohamed; Kamh, Sanaa Abd El-Tawab [Electronics Research Laboratory, Physics Department, Faculty of Women for Arts, Science and Education, Ain-Shams University, Cairo (Egypt); Abdel-Maksood, Ashraf Mosleh; Soliman, Fouad Abd El-Moniem Saad [Nuclear Materials Authority, Cairo (Egypt)

    2016-10-15

    The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  11. Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments

    Directory of Open Access Journals (Sweden)

    Wafaa Abd El-Basit

    2016-10-01

    Full Text Available The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  12. Son: Part One

    Directory of Open Access Journals (Sweden)

    Jennifer Higgie

    2004-08-01

    Full Text Available It is 1842. Two Englishman set out on a Grand Tour of Europe and the Middle East. One is a young, gifted artist; the other a Gentleman. By the time they return to England, the artist has become a devotee of the Egyptian god Osiris. One night, after dining together in a small inn in Cobham, he violently murders his beloved father, believing him to be an imposter. Why? Son is a novel inspired by the life of Richard Dadd, one of the greatest Victorian painters and inmate of Bethlem Hospital - more commonly known as Bedlam. Part Two of Son will be published in Portal vol. 2, no. 1, January 2005.

  13. Son: Part Two

    Directory of Open Access Journals (Sweden)

    Jennifer Higgie

    2005-03-01

    Full Text Available It is 1842. Two Englishman set out on a Grand Tour of Europe and the Middle East. One is a young, gifted artist; the other a Gentleman. By the time they return to England, the artist has become a devotee of the Egyptian god Osiris. One night, after dining together in a small inn in Cobham, he violently murders his beloved father, believing him to be an imposter. Why? Son is a novel inspired by the life of Richard Dadd, one of the greatest Victorian painters and inmate of Bethlem Hospital - more commonly known as Bedlam. Part one of Son was published in PORTAL vol. 1, no. 2, in July 2004. This is the second and concluding part of the novel.

  14. Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

    Science.gov (United States)

    Vukajlović Pleština, Jelena; Đerek, Vedran; Francaviglia, Luca; Amaduzzi, Francesca; Potts, Heidi; Ivanda, Mile; Morral, Anna Fontcuberta i.

    2017-07-01

    Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous silicon. Here, we present a method for the large-area fabrication of porous silicon microtubes by the stain etching of silicon micropillar arrays. We explain and model how the formation of the microtubes is influenced by the morphology of the substrate, especially the concave or convex character of the 3D features. Light emission is demonstrated at the micro- and nanoscale respectively by photo- and cathodoluminescence. Finally, we demonstrate a 0.55 cm2 device that can work as a photodetector with 2.3% conversion efficiency under one sun illumination, and also as a broadband light emitting diode, illustrating the applicability of our results for optoelectronic applications.

  15. Organic semiconductor heterojunctions and its application in organic light-emitting diodes

    CERN Document Server

    Ma, Dongge

    2017-01-01

    This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

  16. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates.

    Science.gov (United States)

    Chen, Shuming; Kwok, Hoi Sing

    2010-01-04

    Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost-effective method to rough the substrates and hence to scatter the light. By simply sand-blasting the edges and back-side surface of the glass substrates, a 20% improvement of forward efficiency has been demonstrated. Moreover, due to scattering effect, a constant color over all viewing angles and uniform light pattern with Lambertian distribution has been obtained. This simple and cost-effective method may be suitable for mass production of large-area OLEDs for lighting applications.

  17. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    Science.gov (United States)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Manaf Hashim, Abdul; Fadzli Abd Rahman, Shaharin; Rahman, Abdul Rahim Abdul; Nizam Osman, Mohd

    2011-02-01

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  18. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    Energy Technology Data Exchange (ETDEWEB)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam, E-mail: manaf@fke.utm.my [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

    2011-02-15

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  19. Amplitude-stabilized frequency-modulated laser diode and its interferometric sensing applications.

    Science.gov (United States)

    Takahashi, Y; Yoshino, T; Ohde, N

    1997-08-20

    A direct frequency-modulated (FM) laser diode light source without light power variation is developed. The amplitude variation of the FM laser diode is compensated by means of a feedback system with use of a superluminescent diode as an external light power controller. Output power greater than 1 mW is obtained at the modulation frequency to 5 kHz with a >10 stabilization factor. By use of the amplitude-stabilized FM laser diode, we measured subfringes with high accuracy in FM continuous wave interferometry, increased the dynamic range of the displacement measurement, and improved the stabilization factor in the laser diode feedback interferometer.

  20. Beam Profile Improvement of a High-Power Diode Laser Stack for Optoacoustic Applications

    Science.gov (United States)

    Sánchez, Miguel; Rodríguez, Sergio; Leggio, Luca; Gawali, Sandeep; Gallego, Daniel; Lamela, Horacio

    2017-04-01

    Recent advances in high-power diode lasers (HPDLs) technology allow their use as potential sources for optoacoustic (OA) applications, due to their high repetition rates (a few kHz), low costs and sizes. However, some OA applications require pulse energies in the order of mJ that cannot be provided by the only HPDLs (several μJ). The employment of diode laser bars (DLBs) and stacks (DLSs) significantly increases the energy per pulse up to several mJ, but they require more optical elements for collimation in fast and slow axes. In this work, we show an 808 nm DLS emitting optical nanosecond pulses with currents of ˜ 200 A and supplied by a customized current driver. We only collimate the beam in the fast axis by disposing the core of 200 μm optical fibers as collimating lenses along each bar of the stack, and we discuss the improvement of the beam profile. The results demonstrate that the beam profile is notably improved with the optical fiber lenses, and a 6.4 mm × 4.3 mm light spot is obtained by using a conventional focusing lens. Measurements report a total energy per pulse of 630 μJ in the spot, considering a pulse width of 850 ns and a repetition rate of 1 kHz. Finally, we focus the light spot into an absorbing inclusion (graphene oxide) hosted in a semi-transparent phantom to generate and detect high OA signals ({˜ }355 mV_{pp}). The results achieved demonstrate the capability of our DLS system to be applied in multispectral OA systems with final application in OA endoscopy and microscopy.

  1. High-performance GaSb laser diodes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications

    Science.gov (United States)

    Dvinelis, Edgaras; TrinkÅ«nas, Augustinas; Greibus, Mindaugas; Kaušylas, Mindaugas; Žukauskas, Tomas; Å imonytÄ--, Ieva; Songaila, RamÅ«nas; Vizbaras, Augustinas; Vizbaras, Kristijonas

    2015-01-01

    Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, and defense applications. Gas sensing in this spectral region is attractive due to the presence of numerous absorption lines for such gases as methane, ethane, ozone, carbon dioxide, carbon monoxide, etc. Sensing of the mentioned gas species is of particular importance for applications such as atmospheric LIDAR, petrochemical industry, greenhouse gas monitoring, etc. Defense applications benefit from the presence of covert atmospheric transmission window in the 2.1-2.3 micron band which is more eye-safe and offers less Rayleigh scattering than the conventional atmospheric windows in the near-infrared. Major requirement to enable these application is the availability of high-performance, continuous-wave laser sources in this window. Type-I GaSb-based laser diodes are ideal candidates for these applications as they offer direct emission possibility, high-gain and continuous wave operation. Moreover, due to the nature of type-I transition, these devices have a characteristic low operation voltage, which results in very low input powers and high wall-plug efficiency. In this work, we present recent results of 2 μm - 3.0 μm wavelength room-temperature CW light sources based on type-I GaSb developed at Brolis Semiconductors. We discuss performance of defense oriented high-power multimode laser diodes with superluminescent gain chips will be presented.

  2. Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

    Directory of Open Access Journals (Sweden)

    Hans Lüth

    2006-04-01

    Full Text Available GaAs-based Gunn diodes with graded AlGaAs hot electron injectorheterostructures have been developed under the special needs in automotive applications.The fabrication of the Gunn diode chips was based on total substrate removal andprocessing of integrated Au heat sinks. Especially, the thermal and RF behavior of thediodes have been analyzed by DC, impedance and S-parameter measurements. Theelectrical investigations have revealed the functionality of the hot electron injector. Anoptimized layer structure could fulfill the requirements in adaptive cruise control (ACCsystems at 77 GHz with typical output power between 50 and 90 mW.

  3. Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

    Directory of Open Access Journals (Sweden)

    Fengbing Wu

    2012-01-01

    Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

  4. Luminescent Tungsten(VI) Complexes: Photophysics and Applicability to Organic Light-Emitting Diodes and Photocatalysis.

    Science.gov (United States)

    Yeung, Kwan-Ting; To, Wai-Pong; Sun, Chenyue; Cheng, Gang; Ma, Chensheng; Tong, Glenna So Ming; Yang, Chen; Che, Chi-Ming

    2017-01-02

    The synthesis, excited-state dynamics, and applications of two series of air-stable luminescent tungsten(VI) complexes are described. These tungsten(VI) complexes show phosphorescence in the solid state and in solutions with emission quantum yields up to 22 % in thin film (5 % in mCP) at room temperature. Complex 2 c, containing a 5,7-diphenyl-8-hydroxyquinolinate ligand, displays prompt fluorescence (blue-green) and phosphorescence (red) of comparable intensity, which could be used for ratiometric luminescent sensing. Solution-processed organic light-emitting diodes (OLEDs) based on 1 d showed a stable yellow emission with an external quantum efficiency (EQE) and luminance up to 4.79 % and 1400 cd m(-2) respectively. These tungsten(VI) complexes were also applied in light-induced aerobic oxidation reactions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Evaluation of inorganic and organic light-emitting diode displays for signage application

    Science.gov (United States)

    Sharma, Pratibha; Kwok, Harry

    2006-08-01

    High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the

  6. Son, Sent, and Servant

    Directory of Open Access Journals (Sweden)

    Truls Åkerlund

    2015-11-01

    Full Text Available This study challenges the claim that Jesus is the archetypical servant leader as described in contempo-rary leadership literature. Based on a theological reading of the Fourth Gospel, the paper suggests that, as a servant, Jesus cannot be understood apart from his mission and obedience to God. Consequently, Jesus was not primarily a servant leader but rather the Son who was sent to the world to enact the Fa-ther’s will. In this regard, the Fourth Gospel provides a unique perspective that is barely noted in the current discourse on servant leadership modelled on the example of Christ. Although certain aspects of servant leadership theory correspond to John’s portrayal of Jesus, the study concludes that other de-scriptions of him as a servant leader suffer from a one-sided and reductionist Christology. Implications of this view for Christian ministry are briefly sketched out.

  7. Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

    Energy Technology Data Exchange (ETDEWEB)

    Roepcke, J [INP-Greifswald, 17489 Greifswald, Friedrich-Ludwig-Jahn-Str. 19 (Germany); Lombardi, G [CNRS LIMHP, Universite Paris XIII, 99, av. J.B. Clement, 93430 Villetaneuse (France); Rousseau, A [Laboratoire de Physique et Technologie des Plasmas, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Davies, P B [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)

    2006-11-01

    Within the last decade mid-infrared absorption spectroscopy over a region from 3 to 17{mu}m and based on tuneable lead salt diode lasers, often called tuneable diode laser absorption spectroscopy or TDLAS, has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry in molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has led to further applications of TDLAS because most of these compounds and their decomposition products are infrared active. TDLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetic phenomena. Information about gas temperature and population densities can also be derived from TDLAS measurements. A variety of free radicals and molecular ions have been detected by TDLAS. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of quantum cascade lasers (QCLs) offers an attractive new option for the monitoring and control of industrial plasma processes. The aim of the present paper is threefold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas (ii) to report on selected studies of the spectroscopic properties and kinetic behaviour of radicals and (iii) to describe the current status of advanced instrumentation for TDLAS in the mid-infrared.

  8. Laser assisted die bending: a new application of high power diode lasers

    Science.gov (United States)

    Schuöcker, D.; Schumi, T.; Spitzer, O.; Bammer, F.; Schuöcker, G.; Sperrer, G.

    2015-02-01

    Nowadays high power lasers are mainly used for cutting of sheet metals, for welding, hardening and rapid prototyping. In the forming of sheet metals as bending or deep drawing lasers are not used. Nevertheless a few years ago a new application of high power lasers has been invented, where bending of materials that break at room temperature becomes possible by heating them along the bending edge with high power lasers thus allowing their treatment without cracks and rupture. For this purpose a large number of diode lasers are arranged in the bottom tool of a bending machine (a V-shaped die) which heat up the initially flat sheet metal during the bending process what is performed by pressing it into the die with a knife shaped upper tool where due to the laser heating the material is softened and thus cracks are avoided. For the technical realization of the new process of laser assisted die bending, modules equipped with numerous laser diodes and a total beam power of 2,5 kW are used. The light emitted by these modules enters a tool with a length of 15cm and is deflected towards the workpiece. By using ten of these modules with adjacent dies and by integrating those in a bending press a bending edge of sheet metals with a length of 1500mm can be realized. Such a bending press with laser assistance also needs energization with a power of practically 50kW, a respective water flow, a heat exchanger system and also a control for all functions of this system. Special measures have also been developed to avoid radiating of those tools that are not covered by a workpiece in the case of bending edges shorter than the full length of the bending tools whereas individual short circuiting of diode modules can be performed. Specific measures to ensure a safe operation without any harm to the operational person have been realized. Exploitation of the bending process has been carried out for titanium, where material thicknesses up to 3mm have been bent successfully.

  9. Application of a structure with a diode thermal effect for solar heating and cooling of a building; Application d'une structure a effet de diode thermique au chauffage et a la climatisation solaire d'un local

    Energy Technology Data Exchange (ETDEWEB)

    Boukadida, N. [Faculte des Sciences de Monastir (Tunisia); Vullierme, J.J. [Ecole Nationale Superieure de Mecanique et d' Aerotechnique (ENSMA), Lab. d' Etudes Thermiques, 86 - Poitiers (France)

    2002-07-01

    The aim of this study is to present the effect of a structure with a diode thermal effect on the building thermal behavior. Numerical simulations allowed us to compare the thermal behavior of a building equipped with this structure on its east, south and west frontages to that of standing or conventional building with large or low inertia. Results showed that the structure has a diode thermal effect mainly for the heating application. The revetment nature of the interior structure sides has an effect on the total coefficient of heat transfer The efficiency of this structure is sensible for cases where we can allow a low temperature inside the building during the winter season for a heating application and a high temperature during the summer season for a cooling application. (authors)

  10. Application of light-emitting diodes (LEDs) in cultivation of phototrophic microalgae: current state and perspectives.

    Science.gov (United States)

    Glemser, M; Heining, M; Schmidt, J; Becker, A; Garbe, D; Buchholz, R; Brück, T

    2016-02-01

    The quality and regulation of the incident light is crucial in microalgae cultivation processes. Depending on wavelength, spectrum, and intensity, growth characteristics and biochemical composition of these organisms vary. With mainly fluorescent lamps (FL) used previously for illumination, such variabilities could not be studied adequately due to their broad emission spectrum. In contrast, light-emitting diodes (LEDs) emit a very narrow wavelength band and enable flexible photobioreactor designs due to their small size. This review provides a condensed overview on the application of LEDs in microalgal cultivation processes. It summarizes the current availability and applicability of LED technologies as an illumination source for research-focused photobioreactor systems. A particular focus is the use of narrow-wavelength LEDs to address fundamental as well as applied aspects of light color on algae biomass and value-added compound formation. In this respect, the application of internal and external illumination systems is reviewed together with trends in the industrial use of LED systems to intensify algae process efficiency.

  11. Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: A review.

    Science.gov (United States)

    Song, Kai; Mohseni, Madjid; Taghipour, Fariborz

    2016-05-01

    Ultraviolet (UV) disinfection is an effective technology for the inactivation of pathogens in water and is of growing interest for industrial application. A new UV source - ultraviolet light-emitting diode (UV-LED) - has emerged in the past decade with a number of advantages compared to traditional UV mercury lamps. This promising alternative raises great interest in the research on application of UV-LEDs for water treatment. Studies on UV-LED water disinfection have increased during the past few years. This article presents a comprehensive review of recent studies on UV-LEDs with various wavelengths for the inactivation of different microorganisms. Many inconsistent and incomparable data were found from published studies, which underscores the importance of establishing a standard protocol for studying UV-LED inactivation of microorganisms. Different UV sensitivities to UV-LEDs and traditional UV lamps were observed in the literature for some microorganisms, which requires further investigation for a better understanding of microorganism response to UV-LEDs. The unique aspects of UV-LEDs improve inactivation effectiveness by applying LED special features, such as multiple wavelengths and pulsed illumination; however, more studies are needed to investigate the influencing factors and mechanisms. The special features of UV-LEDs offer the flexibility of novel reactor designs for a broad application of UV-LED reactors. Copyright © 2016 Elsevier Ltd. All rights reserved.

  12. Bioeffect of lipohemia rabbits irradiated in oral mucosa with 650-nm diode-laser-accompanied oxygen inspiration and clinical application

    Science.gov (United States)

    Yang, Fu-Shou; Tang, Jin-Xian; Liu, Cheng; Yang, Xi-Cheng; Pang, Hi-Xiu

    1998-11-01

    The study on irradiating in oral mucosa of rabbits with 650 nm diode laser and clinical application has been reported in this paper. The result of animal experiment showed: the obvious decrease of cholesterin and triglyceride has been found among those highly lipohemia rabbits in the experiments of 650nm diode laser irradiating accompanying with oxygen, as well as the parameters of hemorheology obviously being improved, as compared with highly lipohemia rabbits un-irradiating, the statistical analysis showing P renal interstitial in the group of rabbits which are irradiated with laser and accompanying with oxygen inspiration, and even the perfectly recovered tissue in some rabbits has been seen. This experimental result is significantly for clinical application. The results of clinic application showed, that the patients employed this method which treatment cerebral infarction, lipohemia, the total effective ratio achieved 91.7 percent, perfect effect 30.6 percent.

  13. Application of well characterized e - beam evaporated WSe2 thin films in Schottky Barrier diodes

    Science.gov (United States)

    Patel, Mayurkumar M.

    The studies of semiconductor thin films and their junctions such as metal semiconductor junctions (Schottky Barriers) have received much attention due to their applications in various electronic and optoelectronic devices including high frequency switching device, Schottky barrier devices, solar cells etc. But, realization of any electronic device using a combination of bulk and thin film or all bulk or all thin film components essentially requires metallization of metal contacts for electrical signals to flow into and out of the device. Thus junction between two metals and metal-semiconductor is an integral part of the device without which communication to the external circuit components would not be possible. In this reference stable metalsemiconductor contacts of ohmic as well as rectifying nature are very much important from technological point of view. In both cases preparation of reliable and efficient metal contacts with high yield and stability is challenging task for devices operating at high frequencies when packing density is increased by many fold. Thus, the behavior of metal-semiconductor contacts at microscopic scale may be explored for the development of future technology. The subject matter of such contacts is well documented in many books with review of developments in the recent past. Earlier devices were prepared on the bulk elemental semiconductors as an active region which was then followed by crystalline/amorphous compound semiconductors in bulk as well as thin film forms like Solar cells, p-n junction diodes, Schottky barrier devices etc. in recent past. Normally bulk crystalline'or amorphous substrate is used to support device structure made from crystalline/amorphous bulk and thin film. However, to the best of author's knowledge no attempts have been made to study the devices prepared by depositing semiconductor thin film with thin metal film supported by a by a non-conducting glass substrate. For this purpose, studies were carried out on

  14. Resonant tunnelling diode oscillator as an alternative LO for SIS receiver applications

    Science.gov (United States)

    Blundell, R.; Papa, D. C.; Brown, E. R.; Parker, C. D.

    1993-01-01

    The resonant tunnelling diode (RTD) oscillator has been demonstrated for the first time as a local oscillator (LO) in a heterodyne receiver. Noise measurements made on a sensitive 200 GHz superconductor-insulator-superconductor receiver using both a multiplied Gunn diode and an RTD oscillator as the LO revealed no difference in receiver noise as a function of oscillator type.

  15. New class of compact diode pumped sub 10 fs lasers for biomedical applications

    DEFF Research Database (Denmark)

    Le, T.; Mueller, A.; Sumpf, B.;

    2016-01-01

    Diode-pumping Ti: sapphire lasers promises a new approach to low-cost femtosecond light sources. Thus in recent years much effort has been taken just to overcome the quite low power and low beam qualities of available green diodes to obtain output powers of several hundred milliwatts from a fs-la...

  16. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  17. Diode lasers for direct application by utilizing a trepanning optic for remote oscillation welding of aluminum and copper

    Science.gov (United States)

    Fritsche, Haro; Müller, Norbert; Ferrario, Fabio; Fetissow, Sebastian; Grohe, Andreas; Hagen, Thomas; Steger, Ronny; Katzemaikat, Tristan; Ashkenasi, David; Gries, Wolfgang

    2017-02-01

    We report the first direct diode laser module integrated with a trepanning optic for remote oscillation welding. The trepanning optic is assembled with a collimated DirectProcess 900 laser engine. This modular laser is based on single emitters and beam combiners to achieve fiber coupled modules with a beam parameter product or BPP design consists in vertically stacking several diodes in the fast axis which leads to a rectangular output of about 100 W with BPP of product of the original vertical stack without the power loss of fiber coupling. The 500 W building blocks feature a highly flexible emitting wavelength bandwidth. New wavelengths can be configured by simply exchanging parts and without modifying the production process. This design principle provides the option to adapt the wavelength configuration to match a broad set of applications, from the UV to the visible and to the far IR depending on the commercial availability of laser diodes. This opens numerous additional applications like laser pumping, scientific and medical applications, as well as materials processing applications such as cutting and welding of copper aluminum or steel. Furthermore, the module's short lead lengths enable very short pulses. Integrated with electronics, the module's pulse width can be adjusted from micro-seconds to cw mode operation by simple software commands. An optical setup can be directly attached instead of a fiber to the laser module thanks to its modular design. This paper's experimental results are based on a trepanning optic attached to the laser module. Alltogether the setup approximately fits in a shoe box and weighs less than 20 kg which allows for direct mounting onto a 3D-gantry system. The oscillating weld performance of the 500 W direct diode laser utilizing a novel trepanning optic is discussed for its application to aluminum/aluminum and aluminum/copper joints.

  18. À chacun son puzzle

    Directory of Open Access Journals (Sweden)

    Jean-Noël Ferrié

    2012-05-01

    Full Text Available Le texte soutient que le « tournant naturaliste » que l’on nous invite à négocier ne donne aucun moyen supplémentaire pour parvenir à une description perspicace de ce que les gens font dans des circonstances précises, l’existence humaine pouvant être considérée comme une collection de circonstances précises. Sans doute le naturalisme nous permet-il de comprendre comment certaines actions humaines sont possibles, mais cela ne nous dit pas pourquoi et comment elles font sens pour tout un chacun. La méthodologie nécessaire pour éclaircir le premier point obscurcit généralement le second. Le mieux est donc de considérer que les deux approches ne vont pas de pair. Ce point de vue est soutenu à partir d’exemple tirés de l’anthropologie de la religion.To each one his puzzle. For a serene methodological pluralismThe text argues that the « naturalistic turn » that we are invited to negotiate does not give any additional means to achieve an insightful description of what people do in specific circumstances, and human existence can be considered as a collection of specific circumstances. Probably naturalism allows us to understand how some human actions are possible, but that does not tell us why and how they make sense for everyone. The methodology needed to clarify the first point usually obscures the second one. The best way is to consider that the two approaches do not go together. The text supports this view from an example drawn from the anthropology of religion.A cada uno su rompecabezas. En favor de un pluralismo metodológico serenoEl texto argumenta que la inflexión naturalista a la que se nos invita a participar no proporciona ningún medio suplementario que desemboque en una descripción perspicaz de lo que la gente hace en circunstancias concretas ya que la existencia humana puede ser considerada como una concatenación de circunstancias concretas. Sin duda el naturalismo nos permite comprender como son

  19. Diode laser using narrow bandwidth interference filter at 852 nm and its application in Faraday anomalous dispersion optical filter

    Science.gov (United States)

    Jiang, Zhaojie; Zhou, Qi; Tao, Zhiming; Zhang, Xiaogang; Zhang, Shengnan; Zhu, Chuanwen; Lin, Pingwei; Chen, Jingbiao

    2016-08-01

    We demonstrate an 852-nm external cavity diode laser (ECDL) system whose wavelength is mainly determined by an interference filter instead of other wavelength selective elements. The Lorentzian linewidth measured by the heterodyne beating between two identical lasers is 28.3 kHz. Moreover, we test the application of the ECDL in the Faraday atomic filter. Besides saturated absorption spectrum, the transmission spectrum of the Faraday atomic filter at 852 nm is measured by using the ECDL. This interference filter ECDL method can also be extended to other wavelengths and widen the application range of diode laser. Project supported by the National Natural Science Foundation of China (Grant No. 91436210) and the International Science and Technology Cooperation Program of China (Grant No. 2010DFR10900).

  20. Building block diode laser concept for high brightness laser output in the kW range and its applications

    Science.gov (United States)

    Ferrario, Fabio; Fritsche, Haro; Grohe, Andreas; Hagen, Thomas; Kern, Holger; Koch, Ralf; Kruschke, Bastian; Reich, Axel; Sanftleben, Dennis; Steger, Ronny; Wallendorf, Till; Gries, Wolfgang

    2016-03-01

    The modular concept of DirectPhotonics laser systems is a big advantage regarding its manufacturability, serviceability as well as reproducibility. By sticking to identical base components an economic production allows to serve as many applications as possible while keeping the product variations minimal. The modular laser design is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking several diodes in fast axis. This can be theoretically done until the combined fast axis beam quality is on a comparable level as the individual diodes slow axis beam quality without loosing overall beam performance after fiber coupling. Those stacked individual emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100 W with BPP of stacking those building blocks using the very same dense spectral combing technique up to multi kW Systems without further reduction of the BPP. The 500 W building blocks are consequently designed in a way that they feature a high flexibility with regard to their emitting wavelength bandwidth. Therefore, new wavelengths can be implemented by only exchanging parts and without any additional change of the production process. This design principal theoretically offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR as long as there are any diodes commercially available. This opens numerous additional applications like laser pumping, scientific applications, materials processing such as cutting and welding of copper aluminum or steel and also medical application. Typical operating at wavelengths in the 9XX nm range, these systems are designed for and mainly used in cutting and welding applications, but adapted wavelength ranges such as 793 nm and 1530 nm are also offered. Around 15

  1. Organic semiconductor heterojunction and its application in organic light-emitting diodes (Conference Presentation)

    Science.gov (United States)

    Ma, Dongge

    2016-09-01

    Organic light-emitting diodes (OLEDs) have drawn increasing attention as the next generation displays and lighting sources. High efficiency and long lifetime are necessary for OLEDs in practical applications. In conventional OLEDs, the charge carriers are directly injected into the organic transport layers from electrodes, the injection barriers between the organic transport layers and electrodes are unavoidable due to the mismatch between the work function of metal electrode and the energy level of charge-transport layer, which greatly affects the performance of fabricated OLEDs. Furthermore, tandem OLEDs, which are fabricated by vertically connecting several individual electroluminescent (EL) units together in series via an appropriate charge generation layer (CGL) with the entire device driven by a single power source can significantly enhance current efficiency and stability, but their performance is strongly dependent on the used CGL, especially the power efficiency is difficult to enhance due to the increase of working voltage. Recently we found that organic semiconductor heterojunctions show efficient charge generation effect and as CGL, not only double the luminance and current efficiency, but also greatly improve the power efficiency, which is difficult in tandem OLEDs based on conventional CGLs. We also realized electrode-independent charge injection by using organic semiconductor heterojuncrions as injectors in OLEDs, and obtained comparable electroluminescent (EL) performance with that of conventional OLEDs. Here, we report the results of tandem OLEDs based on organic semiconductor heterojunctions as CGL and OLEDs using organic semiconductor heterojunctions as injectors, and discuss this working mechanism in detail.

  2. Analysis of Noise Failure Characteristics for Superluminescent Diode Fiber-Optic Gyroscopes in Space Applications

    Science.gov (United States)

    Li, Min; Huang, Xiaokai; Jin, Jing; Chen, Yunxia; Kang, Rui

    Noise failure, particularly due to random walk error (RWE) degradation behavior, is one of the critical failure modes for fiber-optic gyroscopes (FOGs) in space applications. In this paper, firstly, the analytical model of RWE is presented and the affected parameters are listed according to the gamma irradiation damage mechanism. In addition, the influence of temperature is also included. The deterioration of affected parameters is determined through a 60Co radiation experiment on optic and optoelectronic components. Based on the parameters’ deterioration range and assumed distribution properties, their importance to the noise failure is calculated through the Sobol method, a global sensitivity analysis method. In the computation steps, the Latin Hyper Sampling (LHS) based Monte-Carlo numerical simulation technique is adopted. It is determined from calculation results that the detected light power (DLP) is the noise failure characteristic which is the most sensitive parameter in the space environment. Finally, another 60Co radiation experiment with the same conditions is performed on a superluminescent diode (SLD) FOG. The original noise degradation behavior is compared to the simulated RWE, calculated according to DLP, and the result shows that they follow trend almost identical. This supports the conclusion that DLP is the most sensitive noise failure characteristic for SLD-based FOGs.

  3. Blue emitting 1,8-naphthalimides with electron transport properties for organic light emitting diode applications

    Science.gov (United States)

    Ulla, Hidayath; Kiran, M. Raveendra; Garudachari, B.; Ahipa, T. N.; Tarafder, Kartick; Adhikari, Airody Vasudeva; Umesh, G.; Satyanarayan, M. N.

    2017-09-01

    In this article, the synthesis, characterization and use of two novel naphthalimides as electron-transporting emitter materials for organic light emitting diode (OLED) applications are reported. The molecules were obtained by substituting electron donating chloro-phenoxy group at the C-4 position. A detailed optical, thermal, electrochemical and related properties were systematically studied. Furthermore, theoretical calculations (DFT) were performed to get a better understanding of the electronic structures. The synthesized molecules were used as electron transporters and emitters in OLEDs with three different device configurations. The devices with the molecules showed blue emission with efficiencies of 1.89 cdA-1, 0.98 lmW-1, 0.71% at 100 cdm-2. The phosphorescent devices with naphthalimides as electron transport materials displayed better performance in comparison to the device without any electron transporting material and were analogous with the device using standard electron transporting material, Alq3. The results demonstrate that the naphthalimides could play a significant part in the progress of OLEDs.

  4. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Directory of Open Access Journals (Sweden)

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  5. Mushroom-type structures with the wires connected through diodes: Theory and applications

    Science.gov (United States)

    Forouzmand, Ali; Kaipa, Chandra S. R.; Yakovlev, Alexander B.

    2016-07-01

    In this paper, we establish a general formalism to quantify the interaction of electromagnetic waves with mushroom-type structures (high impedance surface and bi-layer) with diodes inserted along the direction of the wires. The analysis is carried out using the nonlocal homogenization model for the mushroom structure with the generalized additional boundary conditions at the connection of the wires to diodes. We calculate numerically the magnitude and phase of the reflected/transmitted fields in the presence of an ideal and realistic PIN diodes. It is observed that the reflection/transmission characteristics of the mushroom-type structures can be controlled by tuning the working states of the integrated PIN diodes. We realize a structure with a multi-diode switch to minimize the undesired transmission for a particular incident angle. In addition, a dual-band subwavelength imaging lens is designed based on the resonant amplification of evanescent waves, wherein the operating frequency can be tuned by changing the states of the PIN diodes. The analytical results are verified with the full-wave electromagnetic solver CST Microwave Studio, showing a good agreement.

  6. Deterministic chaos in RL-diode circuits and its application in metrology

    Science.gov (United States)

    Kucheruk, Volodymyr; Katsyv, Samuil; Glushko, Mykhailo; Wójcik, Waldemar; Zyska, Tomasz; Taissariyeva, Kyrmyzy; Mussabekov, Kanat

    2016-09-01

    The paper investigated the possibility of measuring the resistive physical quantity generator using deterministic chaos based RL-diode circuit. A generalized structure of the measuring device using a deterministic chaos signal generator. To separate the useful component of the measurement signal of amplitude detector is proposed to use. Mathematical modeling of the RL-diode circuit, which showed a significant effect of the barrier and diffusion capacity of the diode on the occurrence of deterministic chaotic oscillations in this circuit. It is shown that this type deterministic chaos signal generator has a high sensitivity to a change in output voltage resistance in the range of 250 Ohms, which can be used to create the measuring devices based on it.

  7. Next generation 9xx/10xx nm high power laser diode bars for multi-kilowatt industrial applications

    Science.gov (United States)

    Commin, Paul; Todt, René; Krejci, Martin; Bättig, Rainer; Brunner, Reinhard; Lichtenstein, Norbert

    2013-02-01

    We report on the development of high power, 9xx-10xx nm laser diode bars for use in direct diode systems and for solidstate and fibre laser pumping with applications in industrial markets. For 1 cm wide bars on micro channel cooler (MCC) we have achieved a reliable output power of 250 W across the 900 nm - 1060 nm range. At this output power level we have achieved power conversion efficiencies of 65-66 % and 90 % power content slow axis beam divergence of ~6.5°. Results of a 6400 h life test show an average power degradation of 0.6 % per 1000 h at this operating power level. We will also show results of high power bars assembled on the new OCLARO conductive cooler, the BLM. This new cooler has a small footprint of 12.6 mm × 24.8 mm and is designed for lateral or vertical stacking of diodes in multi kilowatt systems but with the benefits associated with a conductive cooler. The thermal properties are shown to be the same as for a standard CS mount. 1 cm wide high fill factor bars and 0.5 cm wide low fill factor half bars assembled on the BLM operate at 63-64 % power conversion efficiency (PCE) with output powers of up to 250 W and 150 W, respectively.

  8. Silicon Carbide Schottky Barrier Diode

    Science.gov (United States)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  9. Optical, electrical, and magnetic field studies of organic materials for light emitting diodes and photovoltaic applications

    Science.gov (United States)

    Basel, Tek Prasad

    We studied optical, electrical, and magnetic field responses of films and devices based on organic semiconductors that are used for organic light emitting diodes (OLEDs) and photovoltaic (OPV) solar cell applications. Our studies show that the hyperfine interaction (HFI)-mediated spin mixing is the key process underlying various magnetic field effects (MFE) and spin transport in aluminum tris(8-hydroxyquinoline)[Alq3]-based OLEDs and organic spin-valve (OSV). Conductivity-detected magnetic resonance in OLEDs and magneto-resistance (MR) in OSVs show substantial isotope dependence. In contrast, isotope-insensitive behavior in the magneto-conductance (MC) of same devices is explained by the collision of spin ½ carriers with triplet polaron pairs. We used steady state optical spectroscopy for studying the energy transfer dynamics in films and OLEDs based on host-guest blends of the fluorescent polymer and phosphorescent molecule. We have also studied the magnetic-field controlled color manipulation in these devices, which provide a strong proof for the `polaron-pair' mechanism underlying the MFE in organic devices. The critical issue that hampers organic spintronics device applications is significant magneto-electroluminescence (MEL) at room temperature (RT). Whereas inorganic spin valves (ISVs) show RT magneto-resistance, MR>80%, however, the devices do not exhibit electroluminescence (EL). In contrast, OLEDs show substantive EL emission, and are particularly attractive because of their flexibility, low cost, and potential for multicolor display. We report a conceptual novel hybrid organic/inorganic spintronics device (h-OLED), where we employ both ISV with large MR at RT, and OLED that has efficient EL emission. We investigated the charge transfer process in an OPV solar cell through optical, electrical, and magnetic field measurements of thin films and devices based on a low bandgap polymer, PTB7 (fluorinated poly-thienothiophene-benzodithiophene). We found that

  10. Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

    Energy Technology Data Exchange (ETDEWEB)

    Guellue, O., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, 72060 Batman (Turkey); Osmaniye Korkut Ata University, Science and Art Faculty, Department of Physics, 80000 Osmaniye (Turkey); Tueruet, A. [Atatuerk University, Science Faculty, Department of Physics, 25240 Erzurum (Turkey)

    2011-01-21

    Research highlights: > This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. > We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. > The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. > The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 {+-} 0.02 and 1.70 {+-} 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height {Phi}{sub b} determined from the I-V measurements was 0.75 {+-} 0.01 eV at 300 K and decreases to 0.61 {+-} 0.01 eV at 200 K. The forward voltage-temperature (V{sub F}-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I{sub F}) in the range 20 nA-6 {mu}A. The V{sub F}-T characteristics were linear for three activation currents in the diode. From the V{sub F}-T characteristics at 20 nA, 100 nA and 6 {mu}A, the values of the temperature coefficients of the forward bias voltage (dV{sub F}/dT) for the diode were determined as -2.30 mV K{sup -1}, -2.60 mV K{sup -1} and -3.26 mV K{sup -1} with a standard error of 0.05 mV K{sup -1}, respectively.

  11. Investigation of tunable diode laser absorption spectroscopy for its application as primary standard for partial pressure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Jousten, K; Bock, T [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany); Padilla-VIquez, G [Laboratorio Costarricense de MetrologIa (Lacomet), Ciudad de la Investigacion de la UCR, San Pedro de Montes de Oca (Costa Rica)], E-mail: Karl.jousten@ptb.de

    2008-03-01

    Partial pressures in vacuum systems can be quite accurately measured by tunable diode laser absorption spectroscopy in the infrared. To examine the possibility for its application as primary standard, for CO{sub 2} in the 2-{mu}m-region we made full traceability to the respective SI unit for each input quantity of the model, evaluated the results according to the ISO guide to the expression of uncertainty in measurement, and validated the method successfully by comparison with gravimetrically produced samples of CO{sub 2} in N{sub 2}.

  12. Extraction of Y2 O3 :Cr(3+) nanophosphor by eco-friendly approach and its suitability for white light-emitting diode applications.

    Science.gov (United States)

    Prasanna Kumar, J B; Ramgopal, G; Sunitha, D V; Prasad, B Daruka; Nagabhushana, H; Vidya, Y S; Anantharaju, K S; Prashantha, S C; Sharma, S C; Prabhakara, K R

    2017-05-01

    Cr(3)(+) -doped Y2 O3 (0.5-9 mol%) was synthesized by a simple solution combustion method using Aloe vera gel as a fuel/surfactant. The final obtained product was calcined at 750°C for 3 h, which is the lowest temperature reported so far for the synthesis of this compound. The calcined product was confirmed for its crystallinity and purity by powder X-ray diffraction (PXRD) studies which showed a single-phase nano cubic phosphor. The particles size estimated by Scherrer formula was in the range of 6-19 nm. The UV-vis spectra showed absorption bands at 198, 272 and 372 nm having band gap energy in the range 4.00-4.26 eV. In order to investigate the possibility of its use in white light emitting display applications, the photoluminescence properties of Cr(3)(+) -doped Y2 O3 nanophosphors were studied at an excitation wavelength in the near ultraviolet (UV) light region (361 nm). The emission spectra consisted of emission peaks in the blue ((4) F9/2  → (6) H15/2 ), orange ((4) F9/2  → (6) H13/2 ) and red ((4) F9/2  → (6) H11/2 ) regions. The CIE coordinates (0.33, 0.33) lie in the white light region. Hence Y2 O3 :Cr(3)(+) can be used for white light-emitting diode (LED) applications. Copyright © 2016 John Wiley & Sons, Ltd.

  13. Low noise InGaAs/InP single-photon negative feedback avalanche diodes: characterization and applications

    Science.gov (United States)

    Boso, Gianluca; Korzh, Boris; Lunghi, Tommaso; Zbinden, Hugo

    2015-05-01

    In recent years, many applications have been proposed that require detection of light signals in the near-infrared range with single-photon sensitivity and time resolution down to few hundreds of picoseconds. InGaAs/InP singlephoton avalanche diodes (SPADs) are a viable choice for these tasks thanks to their compactness and ease-of-use. Unfortunately, their performance is traditionally limited by high dark count rates (DCRs) and afterpulsing effects. However, a recent demonstration of negative feedback avalanche diodes (NFADs), operating in the free-running regime, achieved a DCR down to 1 cps at 10 % photon detection efficiency (PDE) at telecom wavelengths. Here we present our recent results on the characterization of NFAD detectors for temperatures down to approximately 150 K. A FPGA controlled test-bench facilitates the acquisition of all the parameters of interest like PDE, DCR, afterpulsing probability etc. We also demonstrate the performance of the detector in different applications: In particular, with low-temperature NFADs, we achieved high secret key rates with quantum key distribution over fiber links between 100-300 km. But low noise InGaAs/InP SPADs will certainly find applications in yet unexplored fields like photodynamic therapy, near infrared diffuse optical spectroscopy and many more. For example with a large area detector, we made time-resolved measurements of singlet-oxygen luminescence from a standard Rose Bengal dye in aqueous solution.

  14. Custom single-photon avalanche diode with integrated front-end for parallel photon timing applications.

    Science.gov (United States)

    Cammi, C; Panzeri, F; Gulinatti, A; Rech, I; Ghioni, M

    2012-03-01

    Emerged as a solid state alternative to photo multiplier tubes (PMTs), single-photon avalanche diodes (SPADs) are nowadays widely used in the field of single-photon timing applications. Custom technology SPADs assure remarkable performance, in particular a 10 counts/s dark count rate (DCR) at low temperature, a high photon detection efficiency (PDE) with a 50% peak at 550 nm and a 30 ps (full width at half maximum, FWHM) temporal resolution, even with large area devices, have been obtained. Over the past few years, the birth of novel techniques of analysis has led to the parallelization of the measurement systems and to a consequent increasing demand for the development of monolithic arrays of detectors. Unfortunately, the implementation of a multidimensional system is a challenging task from the electrical point of view; in particular, the avalanche current pick-up circuit, used to obtain the previously reported performance, has to be modified in order to enable high parallel temporal resolution, while minimizing the electrical crosstalk probability between channels. In the past, the problem has been solved by integrating the front-end electronics next to the photodetector, in order to reduce the parasitic capacitances and consequently the filtering action on the current signal of the SPAD, leading to an improvement of the timing jitter at higher threshold. This solution has been implemented by using standard complementary metal-oxide-semiconductor (CMOS) technologies, which, however, do not allow a complete control on the SPAD structure; for this reason the intrinsic performance of CMOS SPADs, such as DCR, PDE, and afterpulsing probability, are worse than those attainable with custom detectors. In this paper, we propose a pixel architecture, which enables the development of custom SPAD arrays in which every channel maintains the performance of the best single photodetector. The system relies on the integration of the timing signal pick-up circuit next to the

  15. Current transport across the pentacene/CVD-grown graphene interface for diode applications.

    Science.gov (United States)

    Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

    2012-06-27

    We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole–Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole–Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole–Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.

  16. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

    Science.gov (United States)

    Zdoroveyshchev, A. V.; Dorokhin, M. V.; Vikhrova, O. V.; Demina, P. B.; Kudrin, A. V.; Temiryazev, A. G.; Temiryazeva, M. P.

    2016-11-01

    The magnetic properties of Co45Pt55 films deposited by electron-beam evaporation in vacuum have been studied. The measurements of the Faraday and Kerr magnetooptical effects confirm the presence of the easy-magnetization axis perpendicular to the Co45Pt55 surface. It is shown that the perpendicular magnetic anisotropy and the residual magnetization are retained at 300 K for a long time. The magnetic characteristics of the Co45Pt55 layer surface have been studied by magnetic force microscopy, and "circular" mobile magnetic structures have been detected. The spin light-emitting diodes based on In(Ga)As/GaAs heteronanostructures with Co45Pt55 contact layers were fabricated. These diodes emit circularly-polarized light in the absence of an external magnetic field.

  17. High-quality distributed Bragg reflectors for resonant-cavity light-emitting diode applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S.; Naranjo, F.B.; Calle, F.; Sanchez-Garcia, M.A.; Calleja, E. [ISOM, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Vennegues, P. [CHREA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

    2002-08-16

    Efficient distributed Bragg reflectors based on Al{sub x}Ga{sub 1} {sub -} {sub x}N/GaN multilayer stacks have been grown by plasma-assisted molecular-beam epitaxy on GaN/Al{sub 2}O{sub 3} templates. The final goal is to incorporate these reflectors as bottom mirrors in a backside (sapphire) resonant-cavity light-emitting diode at 510 nm. The reflectors have been characterised by atomic force microscopy, high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Reflectivity measurements have also been performed, obtaining values between 30% and 50%, depending on the Al content used. The incorporation of the Al{sub x}Ga{sub 1} {sub -} {sub x}N/GaN Bragg reflector as bottom mirror in a RCLED structure improves the output power by a factor of 12 compared with conventional light-emitting diodes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  18. Optical and structural properties of CuO nanofilm: Its diode application

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000 Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.co [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060 Batman (Turkey)

    2010-03-04

    The high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet-vis (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy. Structural analysis results demonstrate that the single phase CuO on Si (1 0 0) substrate is of high a crystalline structure with a dominant in monoclinic (1 1 1) orientation. FT-IR results confirm the formation of pure CuO phase. UV-vis absorption measurements indicate that the band gap of the CuO films is 2.64 eV. The PL spectrum of the CuO films shows a broad emission band centered at 467 nm, which is consistent with absorption measurement. Also, Au/CuO/p-Si metal/interlayer/semiconductor (MIS) diodes have been fabricated. Electronic properties (current-voltage) of these structures were investigated. In addition, the interfacial state properties of the MIS diode were obtained. The interface-state density of the MIS diode was found to vary from 6.21 x 10{sup 12} to 1.62 x 10{sup 12} eV{sup -1} cm{sup -2}.

  19. Narrow-line, tunable, high-power diode laser pump for DPAL applications

    Science.gov (United States)

    Pandey, Rajiv; Merchen, David; Stapleton, Dean; Irwin, David; Humble, Chuck; Patterson, Steve; Kissel, Heiko; Biesenbach, Jens

    2013-05-01

    We report on a high-power diode laser pump source for diode-pumped alkali lasers (DPAL), specifically rubidium alkali vapor lasers at 780nm, delivering up to 100W/bar with FWHM spectral line width of 0.06nm (~30GHz). This pump is based on a micro-channel water-cooled stack with collimation in both-axes. Wavelength-locking of the output spectrum allows absorption in one of the very narrow resonance lines of the atomic rubidium alkali vapor. To achieve these results, research was conducted to deliver the highest performance on all key components of the product from the diode laser bar which produces the optical power at 780nm to the external Bragg gratings which narrow the spectrum line width. We highlight the advancements in the epitaxy, device design, beam collimation, grating selection, alignment, tunability and thermal control that enable realization of this novel pump-source for DPALs. Design trade-offs will be presented.

  20. Evaluation of 1024 channel VUV-photo-diodes for soft x-ray diagnostic applications

    Energy Technology Data Exchange (ETDEWEB)

    Molvik, A.W.

    1997-04-25

    We tested the operation of 1024 channel diode arrays (Model AXUV-1024, from IRD, Inc.) in subdued room light to establish that they worked and to determine the direction and speed of the scan of the 1024 channels. Further tests were performed in vacuum in the HAP, High-Average-Power Facility. There we found that the bare or glass covered diodes detected primarily visible light as expected, but diodes filtered by aluminized parylene, produced a signal consistent with soft x-rays. It is probable that the spectral response and sensitivity, as discussed below, reproduce that previously demonstrated by 1 to 16 channel VUV-photodiodes; however, significantly more effort would be required to establish that experimentally. These detectors appear to be worth further evaluation where 25 w spatial resolution bolometers or spectrograph detectors of known sensitivity are required, and single-shot or 0.02-0.2s time response is adequate. (Presumably, faster readout would be available with custom drive circuitry.)

  1. Design and manufacture of planar GaAs Gunn diode for millimeter wave application

    Science.gov (United States)

    Huang, Jie; Yang, Hao; Tian, Chao; Dong, Jun-Rong; Zhang, Hai-Ying; Guo, Tian-Yi

    2010-12-01

    GaAs-based planar Gunn diodes with AlGaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations: cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm2 is obtained. And the characteristics of negative differential resistance and the asymmetry of the current—voltage curve due to the AlGaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.

  2. The applications of diode and Er:YAG lasers in labial frenectomy in infant patients.

    Science.gov (United States)

    Gontijo, Isa; Navarro, Ricardo S; Haypek, Patrícia; Ciamponi, Ana Lídia; Haddad, Ana Estela

    2005-01-01

    This paper describes a clinical case of labial frenectomy using different high power lasers: diode (810 nm) and Er:YAG (2940 nm). Considerations are made about specific indications, surgery techniques, and advantages of labial frenectomy using these laser wavelengths. The diode laser has high absorbance by pigmented tissues with hemoglobin, melanin, and collagen chromophores. For this reason, this wavelength is well indicated for surgery in soft tissue (vaporization, incision, coagulation, hemostasis). It is not properly absorbed, however, and should never be used in contact with hard tissues (bone). The Er:YAG laser has high absorbance to water and mineral apatite, making this wavelength useful and safe for the ablation of hard tissues. In the labial frenectomy clinical procedure, a combined technique is suggested: using the diode laser in soft tissues and the Er:YAG laser in periosteal bone tissues and for removal of final collagen fibers. It is important for the professional to understand the physical characteristics of the different laser wavelengths and their interaction with biological tissues to assure that they are used in a safe way, and that the benefits of this technology can be provided to infant patients.

  3. Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

    Science.gov (United States)

    Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

    2016-01-11

    Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

  4. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  5. Schottky Diode Applications of the Fast Green FCF Organic Material and the Analyze of Solar Cell Characteristics

    Science.gov (United States)

    Çaldiran, Z.; Aydoğan, Ş.; İncekara, Ü.

    2016-05-01

    In this study, a device applications of organic material Fast Green FCF (C37H34N2Na2O10S3Na2) has been investigated. After chemical cleaning process of boron doped H-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky type diode. And then we calculated the basic diode parameters of device with current-voltage (I-V) and capacitance- voltage (C-V) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Φb) of rectifing contact from I-V measurements using thermionic emission methods. Furthermore, we calculated ideality factory (n), barrier height (Φb) and series resistance (Rs) of device using Cheung and Norde functions too. The diffusion potential, barrier height, Fermi energy level and donor concentration have been determined from the linear 1/C2-V curves at reverse bias, at room temperature and various frequencies. Besides we measured the current-voltage (I-V) at under light and analyzed the characteristics of the solar cell device.

  6. Electrical transport characterization of PEDOT:PSS/n-Si Schottky diodes and their applications in solar cells.

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon

    2014-06-01

    We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I(sc)), open circuit voltage (V(oc)), and conversion efficiency (eta) were - 19.7 mA/cm2, - 578.5 mV, and - 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT:PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

  7. Sons and daughters in China.

    Science.gov (United States)

    Robey, B

    1985-11-01

    Demographers from the East-West Population Institute (EWPI) and the China State Family Planning Commission, jointly analyzing data from computer tapes of China's 1982 national fertility survey, have produced new evidence of the extent to which families in China prefer male children. Evidence exists in almost every part of China that couples prefer sons to daughters, according to researchers Fred Arnold and Liu Zhaoxiang. Only Beijing and Shanghai are exceptions to this pattern. The persistence of such attidues in China demonstrates the difficulty of overcoming deeply rooted Confucian traditions. Following the Chinese revolution, the government guaranteed sexual equality in political, economic, and cultural life, but patriarchal attitudes still prevail, particularly in the countryside. Historically, couples have favored sons for a variety of reasons, including to continue the family name, provide security for the parents' old age, add to the family labor force, and perform ancestral rites. Believing that such attitudes block successful implementation of China's 1-child family policy, the government has launched a campaign to try to change them. At the time of the time of the 1982 fertility survey, China's 1-child certificate program had been in effect for 3 years. The program provides incentives such as monetary bonuses, preferential housing allocation, and special consideration for the child in education and job assignments to couples who agree not to have a 2nd child. According to the survey, 37% of all 1-child couples had accepted the 1-child certificate. Significantly, 60% of all 1-child certificate holders have a son. Of couples whose 1st child was a boy, 40% obtained the 1-child certificate, versus only 34% of those whose 1st child was a girl. Despite penalties for renouncing the 1-child certificate, about 1 out of every 10 mothers in the program had given birth to a 2nd child by the time of the survey. The 1st child of these mothers was twice as likely to be

  8. All-diode-laser cooling of Sr+ isotope ions for analytical applications

    Science.gov (United States)

    Jung, Kyunghun; Yamamoto, Kazuhiro; Yamamoto, Yuta; Miyabe, Masabumi; Wakaida, Ikuo; Hasegawa, Shuichi

    2017-06-01

    Trapping and cooling of Sr+ isotope ions by an all-diode-laser system has been demonstrated in order to develop a novel mass spectrometric technique in combination with ion trap-laser cooling. First, we constructed external cavity diode lasers and associated stabilization apparatus for laser cooling of Sr+ ions. The transition frequencies confirmed by optogalvanic spectroscopy enabled successful cooling of 88Sr+ ions. An image of two trapped ions has been captured by CCD camera. Minor isotopes, 84Sr+ and 86Sr+, were also cooled and trapped. From an analysis of the observed spectra of a string crystal of each isotope, the isotope shifts of the cooling transition (5s 2S1/2 → 5p 2P1/2) of Sr+ ions were determined to be +371(8) MHz for Δν84-88 and +169(8) MHz for Δν86-88. In the case of the repumping transition (4d 2D3/2 → 5p 2P1/2), Δν84-88 and Δν86-88 were measured to be -833(6) and -400(5) MHz, respectively. These values are in good agreement with previously reported values.

  9. Achalasia in father and son.

    Science.gov (United States)

    Mackler, D; Schneider, R

    1978-11-01

    Achalasia has not been previously reported in father and son. A man, age 38, and his father, age 66, presented two years apart with symptoms of dysphagia and aspiration. The diagnosis of achalasia was made on the basis of x-ray and endoscopic findings and on esophageal motility studies performed on the father. Both responded well to pneumatic dilatation and have been asymptomatic for 24 months and 6 months, respectively. These cases again suggest a genetic basis for achalasia.

  10. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  11. Scaling of nano-Schottky-diodes

    NARCIS (Netherlands)

    Smit, G.D.J.; Rogge, S.; Klapwijk, T.M.

    2002-01-01

    A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes th

  12. Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications

    Science.gov (United States)

    2017-01-01

    A light-mediated methodology to grow patterned, emissive polymer brushes with micron feature resolution is reported and applied to organic light emitting diode (OLED) displays. Light is used for both initiator functionalization of indium tin oxide and subsequent atom transfer radical polymerization of methacrylate-based fluorescent and phosphorescent iridium monomers. The iridium centers play key roles in photocatalyzing and mediating polymer growth while also emitting light in the final OLED structure. The scope of the presented procedure enables the synthesis of a library of polymers with emissive colors spanning the visible spectrum where the dopant incorporation, position of brush growth, and brush thickness are readily controlled. The chain-ends of the polymer brushes remain intact, affording subsequent chain extension and formation of well-defined diblock architectures. This high level of structure and function control allows for the facile preparation of random ternary copolymers and red–green–blue arrays to yield white emission. PMID:28691078

  13. Parametric System Identification of Thermoelectric Cooler for Single Photon Avalanche Diode Application

    Directory of Open Access Journals (Sweden)

    Nurul Izzati Samsuddin

    2013-06-01

    Full Text Available The purpose of this study is to model the Thermoelectric Coolers (TEC by means of computational intelligence system identification. Thermoelectric coolers are widely used in cooling, maintaining and stabilizing the temperature of the Single Photon Avalanche Diode (SPAD. SPAD is a temperature sensitive optoelectronic device, where even a slight variation in temperature can cause unstable performance in quantum efficiency, responsibility and dark counts. However, it is not a simple task to derive a mathematical model for TEC since it varies with the operating condition. In this study, Particle Swarm Optimization (PSO was used to identify the mathematical model of the multistage TEC (1639733 from Element 14, which encapsulates dynamics of the SPAD, heat sink and components of the cooling heat exchanger. The model was validated by correlation tests, percentage accuracy and also by comparing its time and frequency responses against that of the TEC. It was found that the obtained model has a good representation of the actual system.

  14. Discrete mode laser diodes for FTTH/PON applications up to 10 Gbit/s

    Science.gov (United States)

    O'Carroll, John; Phelan, Richard; Kelly, Brian; Byrne, Diarmuid; Latkowski, Sylwester; Anandarajah, Prince M.; Barry, Liam P.

    2012-06-01

    Discrete Mode Laser Diodes (DMLDs) present an economic approach with a focus on high volume manufacturability of single mode lasers using a single step fabrication process. We report on a DMLD designed for operation in the 1550 nm window with high Side Mode Suppression Ratio (SMSR) over a wide temperature tuning range of -20 °C < T < 95 °C. Direct modulation rates as high as 10 Gbit/s are demonstrated at both 1550 nm and 1310 nm. Transmission experiments were also carried out over single mode fibre at both wavelengths. Using dispersion pre-compensation transmission from 0 to 60 km is demonstrated at 1550 nm with a maximum power penalty measured at 60 km of 3.6 dB.

  15. Soluble Flavanthrone Derivatives: Synthesis, Characterization, and Application to Organic Light-Emitting Diodes.

    Science.gov (United States)

    Kotwica, Kamil; Bujak, Piotr; Data, Przemyslaw; Krzywiec, Wojciech; Wamil, Damian; Gunka, Piotr A; Skorka, Lukasz; Jaroch, Tomasz; Nowakowski, Robert; Pron, Adam; Monkman, Andrew

    2016-06-01

    Simple modification of benzo[h]benz[5,6]acridino[2,1,9,8-klmna]acridine-8,16-dione, an old and almost-forgotten vat dye, by reduction of its carbonyl groups and subsequent O-alkylation, yields solution-processable, electroactive, conjugated compounds of the periazaacene type, suitable for the use in organic electronics. Their electrochemically determined ionization potential and electron affinity of about 5.2 and -3.2 eV, respectively, are essentially independent of the length of the alkoxyl substituent and in good agreement with DFT calculations. The crystal structure of 8,16-dioctyloxybenzo[h]benz[5,6]acridino[2,1,9,8-klmna]acridine (FC-8), the most promising compound, was solved. It crystallizes in space group P1‾ and forms π-stacked columns held together in the 3D structure by dispersion forces, mainly between interdigitated alkyl chains. Molecules of FC-8 have a strong tendency to self-organize in monolayers deposited on a highly oriented pyrolytic graphite surface, as observed by STM. 8,16-Dialkoxybenzo[h]benz[5,6]acridino[2,1,9,8-klmna]acridines are highly luminescent, and all have photoluminescence quantum yields of about 80 %. They show efficient electroluminescence, and can be used as guest molecules with a 4,4'-bis(N-carbazolyl)-1,1'-biphenyl host in guest/host-type organic light-emitting diodes. The best fabricated diodes showed a luminance of about 1900 cd m(-12) , a luminance efficiency of about 3 cd A(-1) , and external quantum efficiencies exceeding 0.9 %.

  16. Photodynamic therapy of murine non-melanoma skin carcinomas with diode laser after topical application of aluminum phthalocyanine chloride

    Science.gov (United States)

    Kyriazi, Maria; Alexandratou, Eleni; Yova, Dido; Rallis, Michail; Trebst, Tilmann

    2007-07-01

    The aim of this work is to study pharmacokinetics and photodynamic efficiency of aluminium phthalocyanine chloride (AlClPc) in dimethylsulfoxide/Tween 80/water solution, after topical application on hairless mice bearing non-melanoma skin carcinomas. The concentration of photosensitizer in normal skin and tumor biopsies 1-6 hours after application was assessed by fluorescence spectroscopy of chemical extractions. The concentration of photosensitizer was 40 times higher in tumor than in normal skin even 1 h after application. For photodynamic therapy (PDT) AlClPc was excited by a diode laser emitting at 670 nm, 1 h after application. Seven different combinations of therapeutic parameters were chosen. The efficiency was assessed as the percentage of complete tumor remission, the tumor growth retardation and the cosmetic outcomes. The highest complete remission 60% was achieved with the combination of 75 mW/cm2 with 150 J/cm2. No recurrence rate was observed in any treatment parameters group and the cosmetic outcome in all completely treated tumors was excellent. The results show that the effectiveness of PDT is highly dependent on fluence rate. In addition, they are promising for further investigation of this PDT scheme in preclinical studies mainly in non-melanoma skin carcinomas up to 7mm.

  17. Evaluation of Direct Diode Laser Deposited Stainless Steel 316L on 4340 Steel Substrate for Aircraft Landing Gear Application

    Science.gov (United States)

    2010-03-01

    AFRL-RX-WP-TP-2010-4149 EVALUATION OF DIRECT DIODE LASER DEPOSITED STAINLESS STEEL 316L ON 4340 STEEL SUBSTRATE FOR AIRCRAFT LANDING GEAR...March 2010 – 01 March 2010 4. TITLE AND SUBTITLE EVALUATION OF DIRECT DIODE LASER DEPOSITED STAINLESS STEEL 316L ON 4340 STEEL SUBSTRATE FOR...Code) N/A Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39-18 Evaluation of Direct Diode Laser Deposited Stainless Steel 316L on

  18. Compound seabuckthorn oil bolt joint poly cresol son in cervical LEEP postoperative suffonylureas solution of application%复方沙棘子油栓联合聚甲酚磺溶液在宫颈LEEP术后的应用

    Institute of Scientific and Technical Information of China (English)

    徐静; 孙建新

    2011-01-01

    目的 探讨复方沙棘子油栓联合聚甲酚黄溶液在宫颈LEEP术后的临床疗效.方法 将120例阴道镜病理回报:宫颈上皮内瘤变1-2级患者随机分成治疗组及对照组,治疗组宫颈LEEP刀治疗后宫颈用聚甲酚黄溶液1:10冲洗,后给复方沙棘子油栓一枚日一次应用,对照组,宫颈LEEP刀术后未曾特殊治疗.结果 宫颈LEEP刀术后,阴道流液多,出血时间长,创面愈合时间长,复方沙棘子油栓联合聚甲酚黄溶液可减少术后阴道排液时间,缩短出血时间,促进创面愈合时间.结论 复方沙棘子油栓联合聚甲酚黄溶液在宫颈LEEP治疗过程中,效果好,疗程短,复发率低.%Objective Explore compound seabuckthom oil bolt joint sons gather cresol yellow solution in cervical LEEP postoperative clinical curative effect. Methods 120 cases of vaginal mirror pathological return:cervical intraepithelial neoplasia of grade 2 variable 1-patients were randomly divided into treatment group and control group,the treatment group cervical LEEP knife after treatment cervical with polycarboxylate cresol yellow solution “flush,empress give compound seabuckthorn oil tethered to a medal,son,controls,cervix once application DaoShu LEEP after not special treatment. Results the cervix DaoShu LEEP after vaginal bleeding time,fluid flow,coagulant long long time,compound seabuckthorn oil bolt joint gather together son solution can reduce postoperative yellow cresol vaginal drainage time,reduce hemorrhage time, promote wound healing time. Conclusion compound seabuckthorn oil bolt joint gather together the son in cervical LEEP yellow cresol solution treatment process,good effect,short course,and the recurrence rate is low.

  19. Efficient Hybrid White Organic Light-Emitting Diodes for Application of Triplet Harvesting with Simple Structure

    CERN Document Server

    Hwang, Kyo Min; Lee, Sungkyu; Yoo, Han Kyu; Baek, Hyun Jung; Kim, Jwajin; Yoon, Seung Soo; Kim, Young Kwan

    2016-01-01

    In this study, we fabricated hybrid white organic light-emitting diodes (WOLEDs) based on triplet harvesting with simple structure. All the hole transporting material and host in emitting layer (EML) of devices were utilized with same material by using N,N'-di-1-naphthalenyl-N,N'-diphenyl-[1,1':4',1":4",1"'-quaterphenyl]-4,4"'-diamine (4P-NPD) which were known to be blue fluorescent material. Simple hybrid WOLEDs were fabricated three color with blue fluorescent and green, red phosphorescent materials. We was investigated the effect of triplet harvesting (TH) by exciton generation zone on simple hybrid WOLEDs. Characteristic of simple hybrid WOLEDs were dominant hole mobility, therefore exciton generation zone was expected in EML. Additionally, we was optimization thickness of hole transporting layer and electron transporting layer was fabricated a simple hybrid WOLEDs. Simple hybrid WOLED exhibits maximum luminous efficiency of 29.3 cd/A and maximum external quantum efficiency of 11.2%. Commission Internatio...

  20. Recent advance in tunable diode laser spectroscopy with background RAM nulling for industrial applications

    Science.gov (United States)

    Ruxton, Keith; Chakraborty, Arup Lal; McGettrick, Andrew J.; Duffin, Kevin; Johnstone, Walter; Stewart, George

    2009-10-01

    A limiting factor of tuneable diode laser spectroscopy (TDLS) with wavelength modulation spectroscopy (WMS) is the presence of background residual amplitude modulation (RAM) on the recovered 1st harmonic signal. The presence of this background term is due to direct modulation of the source laser power. This work presents a novel method to optically remove the unwanted background, with the major benefit being that measurement sensitivity can be increased. The recently developed phasor decomposition method1 (PDM), is a near IR (NIR) TDLS analysis technique that is used with the addition of the new RAM nulling method to recover gas absorption line-shapes. The PDM is a calibration free approach, which recovers the gas absorption line-shape and the isolated 1st derivative of the line-shape from the 1st harmonic signal. The work presented illustrates and validates the new RAM nulling procedure with measurements examining the 1650.96nm absorption line of methane (CH4) with comparisons to theory.

  1. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

    Science.gov (United States)

    Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

    2015-02-04

    In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

  2. Application of tunable diode laser absorption spectroscopy in the detection of oxygen

    Science.gov (United States)

    Zhou, Xin; Jin, Xing

    2015-10-01

    Most aircrafts is driven by chemic energy which is released in the combustion process. For improving the capability of engine and controlling the running on-time, the processes of fuel physics and chemistry need to be analysis by kinds of high quality sensor. In the research of designing and improving the processes of fuel physics and chemistry, the concentration, temperature and velocity of kinds of gas in the combustor need to be detected and measured. In addition, these engines and research equipments are always in the harsh environment of high temperature, high pressure and high speed. The harsh environment needs the sensor to be high reliability, well repetition, no cross- sensitivity between gases, and the traditional measurement system can't satisfy the metrical requirement well. Tunable diode laser absorption spectroscopy (TDLAS) analytic measurement technology can well satisfy the measurement in the harsh environment, which can support the whole measurement plan and high quality measurement system. Because the TDLAS sensor has the excellence of small bulk, light weight, high reliability and well specifically measurement, the TDLAS measurement technology has wide prospects. Different from most measurements, only a beam of laser can be pass through the measured environment by TDLAS, and the measurement equipment needn't be set in the harsh environment. So, the TDLAS equipment can't be interrupted by the measured equipment. The ability of subsistence in the harsh environment is very valuable, especially in the measurement on the subject of aerospace with environment of high speed, combustion and plasma. This paper focuses on the collecting the articles on the subject of oxygen detection of TDLAS. By analyzing the research and results of the articles, we conclude the central issues, difficulties and results. And we can get some instructive conclusions.

  3. Gallium phosphide high temperature diodes

    Science.gov (United States)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  4. ...And Kronos Ate His Sons

    Science.gov (United States)

    Vitiello, Giuseppe

    In closed systems, energy is conserved. The origin of the time axis is completely arbitrary due to the invariance under continuous time-translations. The flowing of time swallows those fictitious origins one might assign on its axis, as Kronos ate his sons. Dissipation breaks such a scenario. It implies a non-forgettable origin of time. Open systems need their complement (their "double") in order to become, together, a closed system. Time emerges as an observable measured by the evolution of the open system complement, which acts as a clock. The conservation of the energy-momentum tensor in electrodynamics is considered and its relation with dissipative systems and self-similar fractal structures is discussed. The isomorphism with coherent states in quantum field theory (QFT) is established and the generator of transitions among unitarily inequivalent representations of the canonical commutation relations (CCR) is shown to provide sequences in time of phases, which defines the arrow of time. Merging properties of electrodynamics, fractal self-similarity, dissipation and coherent states point to an integrated vision of Nature.

  5. Son huasteco e identidad regional

    Directory of Open Access Journals (Sweden)

    Rosa María Bonilla Burgos

    2013-04-01

    Full Text Available La población de la región Huasteca es partícipe de manifestaciones musicales en diferentes ámbitos, lo cual permite reconocer que entre todos los géneros utilizados destaca el son huasteco y su correspondiente bailable llamado huapango. Dichas expresiones musicales se impregnan de los ambientes tanto físico como social que viven constantemente. Es a través de las letras de los sones huastecos que se desarrolla el mecanismo para reflejar el mundo natural que perciben, y los acontecimientos que les suceden, cobrando una importancia que deriva en una identificación que trasciende. Conciben su entorno y lo refieren con sentido de pertenencia-apropiación, que les permite recrear su vida y fundirse en una identificación cultural a la que se le llamará “identidad regional”. La relevancia de considerar una expresión musical de estas características radica en que se preserva y enriquece constantemente unificando un área de México que no necesariamente corresponde a límites políticos establecidos en las diferentes etapas históricas.

  6. Son huasteco e identidad regional

    Directory of Open Access Journals (Sweden)

    Rosa María Bonilla Burgos

    2013-01-01

    Full Text Available La población de la región Huasteca es partícipe de manifestaciones musicales en diferentes ámbitos, lo cual permite reconocer que entre todos los géneros utilizados destaca el son huasteco y su correspondiente bailable llamado huapango. Dichas expresiones musicales se impregnan de los ambientes tanto físico como social que viven constantemente. Es a través de las letras de los sones huastecos que se desarrolla el mecanismo para reflejar el mundo natural que perciben, y los acontecimientos que les suceden, cobrando una importancia que deriva en una identificación que trasciende. Conciben su entorno y lo refieren con sentido de pertenencia-apropiación, que les permite recrear su vida y fundirse en una identificación cultural a la que se le llamará "identidad regional". La relevancia de considerar una expresión musical de estas características radica en que se preserva y enriquece constantemente unificando un área de México que no necesariamente corresponde a límites políticos establecidos en las diferentes etapas históricas.

  7. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  8. Application of a diode array spectroradiometer to measuring the spectral scattering properties of cloud types in a laboratory

    Directory of Open Access Journals (Sweden)

    A. R. D. Smedley

    2007-11-01

    Full Text Available In the last few years diode array spectroradiometers have become useful complements to traditional scanning instruments when measuring visible and ultraviolet solar radiation incident on the ground. This study describes the application of such an instrument to the problem of measuring the radiation scattered by different cloud-types in a laboratory environment. Details of how the instrument is incorporated into the experimental set-up are given together with the development of the system as a whole. The capability to measure a full spectrum for each scattering angle is an undoubted advantage, although the limited sensitivity impacts on the usefulness for optically thin clouds. Nevertheless example results are presented: (1 scattering phase functions at a range of wavelengths recorded simultaneously for water clouds, showing spectral deviation at the rainbow angle and verification of Mie theory; (2 likewise for mixed phase clouds, with evidence of both halo and rainbow features in a single scattering function; and, (3 detail of the forward scattering region in a glaciated cloud showing a barely perceptible halo feature, with implications for the small-scale structure of the ice crystals produced.

  9. Application of a diode array spectroradiometer to measuring the spectral scattering properties of cloud types in a laboratory

    Directory of Open Access Journals (Sweden)

    A. R. D. Smedley

    2007-07-01

    Full Text Available In the last few years diode array spectroradiometers have become useful complements to traditional scanning instruments when measuring visible and ultraviolet solar radiation incident on the ground. This study describes the application of such an instrument to the problem of measuring the radiation scattered by different cloud types in a laboratory environment. Details of how the instrument is incorporated into the experimental set-up are given together with the development of the system as a whole. The capability to measure a full spectrum for each scattering angle is an undoubted advantage, although the limited dynamic range impacts on the usefulness for optically thin clouds. Nevertheless example results are presented: (1 scattering phase functions at a range of wavelengths recorded simultaneously for water clouds, showing spectral deviation at the rainbow angle and verification of Mie theory; (2 likewise for mixed phase clouds, with evidence of both halo and rainbow features in a single scattering function; and, (3 detail of the forward scattering region in a glaciated cloud showing a barely perceptible halo feature, with implications for the small-scale structure of the ice crystals produced.

  10. High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

    Directory of Open Access Journals (Sweden)

    Masahiko Kondow

    2012-01-01

    Full Text Available GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to near infrared. By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved. This paper presents the reproducible growth of high-quality GaInNAs by molecular beam epitaxy. Examining the effect of nitrogen introduction and its correlation with impurity incorporation, we find that Al is unintentionally incorporated into the epitaxial layer even though the Al cell shutter is closed, followed by the concomitant incorporation of O and C. A gas-phase-scattering model can explain this phenomenon, suggesting that a large amount of N2 gas causes the scattering of residual Al atoms with occasional collisions resulting in the atoms being directed toward the substrate. Hence, the reduction of the sublimated Al beam during the growth period can suppress the incorporation of unintentional impurities, resulting in a highly pure epitaxial layer.

  11. Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si

    Science.gov (United States)

    von den Driesch, Nils; Stange, Daniela; Wirths, Stephan; Rainko, Denis; Mussler, Gregor; Stoica, Toma; Ikonic, Zoran; Hartmann, Jean-Michel; Grützmacher, Detlev; Mantl, Siegfried; Buca, Dan

    2016-03-01

    The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the efficient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations confirm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 µm). We have, however, identified some limitations of the GeSn/Ge MQW approach regarding emission efficiency, which can be overcome by introducing SiGeSn ternary alloys as quantum confinement barriers.

  12. 半导体激光在牙周治疗中的临床应用%Clinical application of the diode laser in periodontal therapy

    Institute of Scientific and Technical Information of China (English)

    赵静(综述); 李新月(审校)

    2016-01-01

    半导体激光从20世纪90年代中期开始用于口腔治疗,半导体激光具有高效率,体积小,寿命长,波长可选择,成本低,使用简便,创伤小,患者术后反应小等特点。目前,半导体激光已应用于牙周基础治疗,牙周手术治疗,牙周病的伴发病变--牙本质敏感等牙周治疗,半导体激光在牙周病的治疗中起到越来越重要的作用。本文将就半导体激光用于牙周治疗的临床应用做一综述。%Diode laser century began to be used for dental treatment from the mid-90s of the 20th. Diode laser has the advantages of high efficiency, small volume, long life, wave length selectable,low cost, easy to use, small trauma, and the patients with small postoperative reaction.Currently diode laser has been applied in periodontal non-surgery treatment, periodontal surgery treatment and treatment of periodontal disease accompanying lesions-- dentin sensitivity. Diode laser plays a more and more important role in the treatment of periodontal disease. This paper will review the clinical application of the diode laser.

  13. Investigations on the potential of a novel diode pumped Er:YAG laser system for dental applications

    Science.gov (United States)

    Stock, Karl; Hausladen, Florian; Hibst, Raimund

    2012-01-01

    The successful clinical application of the Er:YAG-laser in dentistry is well known, documented by numerous published studies. These lasers are flash lamp pumped systems and emit pulses of typically some 100 μs duration with energies of up to 1 J. Pulse repetition rates can reach up to 100Hz, and mean powers are up to about 8W. As an alternative to these laser systems recently a novel diode pumped Er:YAG laser system (Pantec Engineering AG) became available. This laser can provide a pulse repetition rate up to 2kHz and a mean laser power up to 15W. The aim of the presented study is to investigate the effect of this laser system on dental hard and soft tissue at various irradiation parameters, particular at repetition rates more than 100 Hz. At first an appropriate experimental set-up was realized with a beam delivery and focusing unit, a computer controlled stepper unit with sample holder, and a shutter unit. The stepper unit allows to move the samples (dentin or enamel slides of extracted human teeth, chicken breast, pig bone) with a defined velocity during irradiation by various laser parameters. For rinsing the sample surface a water spray was also included. The laser produced grooves and cuts were analyzed by light microscopy and laser scanning microscopy regarding to the ablation quality, geometry, ablation efficacy, and thermal effects. The grooves in dentin and enamel show a rough surface, typical for Er:YAG laser ablation. The craters are slightly cone shaped with sharp edges on the surface. Water cooling is essential to prevent thermal injury. The ablation efficacy in dentin is comparable to literature values of the flash lamp pumped Er:YAG laser. The cutting of bone and soft tissue is excellent and appears superior to earlier results obtained with flash lamp pumped system. As a further advantage, the broad range of repetition rates allows to widely vary the thermal side effects. In conclusion, these first experiments with a diode pumped Er:YAG laser

  14. Adult Son-Parent Relationships and Their Associations with Sons' Psychological Distress.

    Science.gov (United States)

    Barnett, Rosalind C.; And Others

    1992-01-01

    Examined relationship between quality of adult sons' experiences in current relationships with parents and sons' psychological distress among 285 sons. Sons who reported positive relationship with their mother or father also reported low psychological distress. Presence or absence of female siblings moderated association between both son-mother…

  15. Policy-based SON management demonstrator

    NARCIS (Netherlands)

    Lohmuller, S.; Eisenblatter, A.; Frenzel, C.; Gotz, D.; Hahn, S.; Kurner, T.; Litjens, R.; Lobinger, A.; Sas, B.; Schmelz, L.C.; Turke, U.

    2015-01-01

    A Self-Organising Network (SON) represents an approach where the optimisation of a mobile radio network is automated through a set of independently operating SON functions. These SON functions, however, require to be configured in order to allow for an optimised network performance with respect to t

  16. Light-emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO{sub 2-{delta}} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Seung-Hee; Huh, Hoon-Hoe; Son, Kee-Chul; Kim, Eui-Tae [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Daejeon (Korea); Lee, Chang-Soo [Department of Chemical Engineering, Chungnam National University, Daeduk Science Town, Daejeon (Korea); Kim, Kyung-Hyun; Huh, Chul [Electronics and Telecommunications Research Institute, Daeduk Science Town, Daejeon (Korea)

    2009-04-15

    We report the light-emitting diode (LED) characteristics of colloidal core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO{sub 2-{delta}} thin films on Si substrate. High-quality CdSe/ZnS QDs were synthesized via a pyrolysis in the range of 220-280 C. The QDs were embedded in TiO{sub 2-{delta}} thin film at 200 C by plasma-enhanced metallorganic chemical vapor deposition. The diode structure of n-TiO{sub 2-{delta}}/QDs/p-Si showed electroluminescence characteristics, indicating the possibility of LED applications of colloidal CdSe/ZnS nanocrystal QDs embedded in oxide films on large-area Si wafer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. ZVZCS Based High Frequency Link Grid Connected SVM applied Three Phase Three Level Diode Clamped Inverter for Photovoltaic Applications Part-II

    Directory of Open Access Journals (Sweden)

    Soumyadeep Ray

    2014-07-01

    Full Text Available This article proposes a newly proposed highly effective Zero Voltage and Zero Current switching based Front end converter with a High Frequency Transformer with a Three Phase Three Level Diode Clamped Inverter in photovoltaic applications. The switching scheme is implemented in MATLAB/ Simulink condition. ZVZCS condition is achieved. This type of converter shows high efficiency and very negligible switching loss. Finally ZVZCS based High Frequency Link Diode Clamped Inverter is connected to Grid. An MCI optimized Current controller is used with SVM switching technique.  In This article, responses with three types of controllers (I, PI, PID have been examined and compared. Simulation results show the effectiveness, and validity of this technique.

  18. High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications

    Science.gov (United States)

    Gordeev, N. Yu.; Maximov, M. V.; Shernyakov, Y. M.; Novikov, I. I.; Karachinsky, L. Ya.; Shchukin, V. A.; Kettler, T.; Posilovic, K.; Ledentsov, N. N.; Bimberg, D.; Duboc, R.; Sharon, A.; Arbiv, D. B.; Ben-Ami, U.

    2008-02-01

    Direct laser diodes can typically provide only a limited single mode power, while ultrahigh-brightness is required for many of the market-relevant applications. Thus, multistage power conversion schemes are applied, when the laser diodes are used just as a pumping source. In this paper we review the recent advances in ultra-large output aperture edge-emitting lasers based on the photonic band crystal (PBC) concept. The concept allows near- and far-field engineering robust to temperature and strain gradients and growth nonuniformities. High-order modes are selectively filtered and the effective optical confinement of the fundamental mode can be dramatically enhanced. At first, we show that robust ultra-narrow vertical beam divergence (operation by processing of the multistripe arrays along their lengths. The concept opens a way for 3D photonic crystal edge emitting lasers potentially allowing scalable single mode power increase to arbitrary high levels.

  19. Diagnostic and therapeutic applications of diode lasers and solid state lasers in medicine. Progress report

    Energy Technology Data Exchange (ETDEWEB)

    Jacques, S.L. [Texas Univ., Houston, TX (United States). Cancer Center; Welch, A.J. [Texas Univ., Austin, TX (United States); Motamedi, M. [Texas Univ., Galveston, TX (United States). Medical Branch; Rastegar, S. [Texas A and M Univ., College Station, TX (United States); Tittel, F. [Rice Univ., Houston, TX (United States); Esterowitz, L. [Naval Research Lab., Washington, DC (United States)

    1992-05-01

    The Texas Medical Center in Houston and the nearby UT Medical Branch at Galveston together constitute a major center of medical research activities. Laser applications in medicine are under development with the engineering assistance of the colloborating engineering centers at Rice University, UT-Austin, and Texas A&M Univ. In addition, this collective is collaborating with the Naval Research Laboratory, where new developments in laser design are underway, in order to transfer promising new laser technology rapidly into the medical environment.

  20. Diagnostic and therapeutic applications of diode lasers and solid state lasers in medicine

    Energy Technology Data Exchange (ETDEWEB)

    Jacques, S.L. (Texas Univ., Houston, TX (United States). Cancer Center); Welch, A.J. (Texas Univ., Austin, TX (United States)); Motamedi, M. (Texas Univ., Galveston, TX (United States). Medical Branch); Rastegar, S. (Texas A and M Univ., College Station, TX (United States)); Tittel, F. (Rice Univ., Houston, TX (United States)); Esterowitz, L. (Naval Research Lab., Washington, DC (United States))

    1992-05-01

    The Texas Medical Center in Houston and the nearby UT Medical Branch at Galveston together constitute a major center of medical research activities. Laser applications in medicine are under development with the engineering assistance of the colloborating engineering centers at Rice University, UT-Austin, and Texas A M Univ. In addition, this collective is collaborating with the Naval Research Laboratory, where new developments in laser design are underway, in order to transfer promising new laser technology rapidly into the medical environment.

  1. Diagnostic and therapeutic applications of diode lasers and solid state lasers in medicine. Progress report

    Energy Technology Data Exchange (ETDEWEB)

    Jacques, S.L. [Texas Univ., Houston, TX (United States). Cancer Center; Welch, A.J. [Texas Univ., Austin, TX (United States); Motamedi, M. [Texas Univ., Galveston, TX (United States). Medical Branch; Rastegar, S. [Texas A and M Univ., College Station, TX (United States); Tittel, F. [Rice Univ., Houston, TX (United States); Esterowitz, L. [Naval Research Lab., Washington, DC (United States)

    1993-05-01

    The Texas Medical Center in Houston and the nearby UT Medical Branch at Galveston together constitute a major center of medical research activities. Laser applications in medicine are under development with the engineering assistance of the collaborating engineering enters at Rice University, UT-Austin, Texas A&M Univ. In addition, this collective is collaborating with the naval Research Laboratory, where new developments in laser design are underway, in order to transfer promising new laser technology rapidly into the medical environment.

  2. SiC-based Schottky diode gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, G.W.; Neudeck, P.G.; Chen, L.Y. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Knight, D. [Cortez/NASA Lewis Research Center, Cleveland, OH (United States); Liu, C.C.; Wu, Q.H. [Electronics Design Center, Case Western Reserve Univ., Cleveland, OH (United States)

    1998-08-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor array for versatile high temperature gas sensing applications. (orig.) 6 refs.

  3. SiC-Based Schottky Diode Gas Sensors

    Science.gov (United States)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  4. Design of compact freeform lens for application specific Light-Emitting Diode packaging.

    Science.gov (United States)

    Wang, Kai; Chen, Fei; Liu, Zongyuan; Luo, Xiaobing; Liu, Sheng

    2010-01-18

    Application specific LED packaging (ASLP) is an emerging technology for high performance LED lighting. We introduced a practical design method of compact freeform lens for extended sources used in ASLP. A new ASLP for road lighting was successfully obtained by integrating a polycarbonate compact freeform lens of small form factor with traditional LED packaging. Optical performance of the ASLP was investigated by both numerical simulation based on Monte Carlo ray tracing method and experiments. Results demonstrated that, comparing with traditional LED module integrated with secondary optics, the ASLP had advantages of much smaller size in volume (approximately 1/8), higher system lumen efficiency (approximately 8.1%), lower cost and more convenience for customers to design and assembly, enabling possible much wider applications of LED for general road lighting. Tolerance analyses were also conducted. Installation errors of horizontal and vertical deviations had more effects on the shape and uniformity of radiation pattern compared with rotational deviation. The tolerances of horizontal, vertical and rotational deviations of this lens were 0.11 mm, 0.14 mm and 2.4 degrees respectively, which were acceptable in engineering.

  5. Application of a one-dimensional TEC code to the characterization of a lanthanum-hexaboride diode

    Science.gov (United States)

    van Dam, Scott A.; Ramalingam, Mysore L.

    A one-dimensional thermionic energy conversion (TEC) computer code has been utilized to provide a theoretical basis of comparison for experimentally derived data obtained from a lanthanum hexaboride cesium vapor thermionic diode. Although the code-generated predictions obtained were not in precise agreement with the experimental results, they do provide a basis for establishing the validity of the experimental results from an analytical framework. Certain discrepancies are thus identified, and an attempt is made to account for them in terms of code inaccuracies and/or possible experimental error. Experimental lanthanum-hexaboride (LaB6) cesium-vapor TEC diode characteristics are compared to those predicted by the TEC code. The diode used was activated by electron-bombardment heating in a rejuvenated diode testing facility. A DOS loop and auxiliary Fortran program were used in conjunction with the original TEC code to generate both general and LaB6 simulated diode current density vs. output voltage characteristics. The effects of changing the emitter and collector work functions and the operating cesium-vapor pressure were studied for both cases.

  6. A study of the electrical properties of self-biased channel MOS diodes for solar-cell applications

    Directory of Open Access Journals (Sweden)

    Tsugutomo Kudoh

    2017-01-01

    Full Text Available We propose two types of low-cost, low-loss diodes as alternatives to Schottky barrier diodes (SBDs for use as bypass diodes connected in parallel with solar-cell panels. Both of our proposed devices are self-biasing channel MOS diodes consisting of an n-channel MOS structure that features three-terminal operation combined with a DMOS cell structure exploiting self-biasing effects. By reducing the threshold voltage of the MOS gate, these devices feature lower on-voltages and lower rates of growth in the reverse leakage current with increasing temperature, thus preventing thermal runaway. To investigate the properties of our devices, we used a device simulator to analyze their performance as bypass diodes for a solar-cell panel. Our results indicate that when a shadow partially covers the cell, the current flowing on the load side of the solar-cell panel is about 50% larger than that observed for a Cr SBD, indicating the potential for significantly improved performance.

  7. Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.

    Science.gov (United States)

    Würtele, M A; Kolbe, T; Lipsz, M; Külberg, A; Weyers, M; Kneissl, M; Jekel, M

    2011-01-01

    GaN-based ultraviolet-C (UV-C) light emitting diodes (LEDs) are of great interest for water disinfection. They offer significant advantages compared to conventional mercury lamps due to their compact form factor, low power requirements, high efficiency, non-toxicity, and overall robustness. However, despite the significant progress in the performance of semiconductor based UV LEDs that has been achieved in recent years, these devices still suffer from low emission power and relatively short lifetimes. Even the best UV LEDs exhibit external quantum efficiencies of only 1-2%. The objective of this study was to investigate the suitability of GaN-based UV LEDs for water disinfection. The investigation included the evaluation of the performance characteristics of UV LEDs at different operating conditions as well as the design of a UV LED module in view of the requirements for water treatment applications. Bioanalytical testing was conducted using Bacillus subtilis spores as test organism and UV LED modules with emission wavelengths of 269 nm and 282 nm. The results demonstrate the functionality of the developed UV LED disinfection modules. GaN-based UV LEDs effectively inactivated B. subtilis spores during static and flow-through tests applying varying water qualities. The 269 nm LEDs reached a higher level of inactivation than the 282 nm LEDs for the same applied fluence. The lower inactivation achieved by the 282 nm LEDs was compensated by their higher photon flux. First flow-through tests indicate a linear correlation between inactivation and fluence, demonstrating a well designed flow-through reactor. With improved light output and reduced costs, GaN-based UV LEDs can provide a promising alternative for decentralised and mobile water disinfection systems. Copyright © 2010 Elsevier Ltd. All rights reserved.

  8. Advances in high power semiconductor diode lasers

    Science.gov (United States)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  9. Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications

    Directory of Open Access Journals (Sweden)

    Ashish Kumar

    2011-01-01

    Full Text Available In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD technique and had a thickness of about 3.7 µm. The calculated ideality factor and barrier height from current-voltage (I-V characteristics (at 300 K for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature.

  10. Mechanism of Fast Current Interruption in p -π -n Diodes for Nanosecond Opening Switches in High-Voltage-Pulse Applications

    Science.gov (United States)

    Sharabani, Y.; Rosenwaks, Y.; Eger, D.

    2015-07-01

    Step-recovery diodes operating in the snappy recovery regime are used as opening switches for generating narrow pulses with high-voltage amplitude. Physical modeling of the switching process is complex due to the large number of parameters involved, including diode structure, the extreme physical conditions, and the effect of external driving conditions. In this work, we address the problem by using a physical device simulator for solving the coupled device and electrical driving circuit equations. This method allows deciphering of the physical processes to take place in the diode during the fast current interruption phase. Herein we analyze the complete hard (snappy) reverse recovery process in short-base devices and determine the fast-transition-phase mechanism. It was found that the fast current interruption phase is constructed of two processes; the main parameters governing the switching time duration and the prepulse magnitude are the diode's reverse current density and its base-doping concentration. We describe the dependence of the switching performance in these parameters.

  11. Preference for sons: past and present.

    Science.gov (United States)

    Li, D

    1997-10-01

    This brief article discusses the present and past preference for sons in China. The preference for sons is rooted in feudal views that men are superior to women. Preference for sons dates back to the Warring States Period, in about 500 B.C. Clan brotherhoods of men have existed for centuries. Historical records mention the practice of female infanticide. Patriarchal families believed that women were economically dependent on men and thus became their subjects. Daughters married, lived in their husband's home, and did not carry the responsibility of caring for their own parents. Couples with only daughters would seek a son-in-law to support them in old age. Rural families with no sons were looked down upon. Sons were expected to carry on the family lineage, increase the reputation of the family, and protect the family's interests. The lack of sons was a sign of humiliation and a curse. The founding of the People's Republic of China brought changes to son preference. The government attempted to increase women's status. In rural areas, women were given equal access to the land. Job opportunities were created for women during the industrialization drive. The Chinese government encouraged the repudiation of the negative impacts of the doctrines of Confucius and Mencius. Efforts were made to give men and women equal pay for equal work. Legislation was passed prohibiting arranged marriage, polygyny, and early marriage. A side effect of fertility decline is the renewed preference for sons. In Huangyan and Haining in Zhejiang, a developed province, the sex ratio at birth is normal. Sexual division of labor reinforces son preference.

  12. Materials for diode pumped solid state lasers

    Science.gov (United States)

    Chase, L. L.; Davis, L. E.; Krupke, W. F.; Payne, S. A.

    1991-07-01

    The advantages of semiconductor diode lasers and laser arrays as pump sources for solid state lasers are reviewed. The properties that are desirable in solid state laser media for various diode pumping applications are discussed, and the characteristics of several promising media are summarized.

  13. Direct Determination of Harmonic and Inter-modulation distortions with an application to Single Mode Laser Diodes

    CERN Document Server

    Tannous, C

    2001-01-01

    Harmonic and Intermodulation distortions occur when a physical system is excited with a single or several frequencies and when the relationship between the input and output is non-linear. Working with non-linearities in the Frequency domain is not straightforward specially when the relationship between the input and output is not trivial. We outline the complete derivation of the Harmonic and Intermodulation distortions from basic principles to a general physical system. For illustration, the procedure is applied to the Single Mode laser diode where the relationship of input to output is non-trivial. The distortions terms are extracted directly from the Laser Diode rate equations and the method is tested by comparison to many results cited in the literature. This methodology is general enough to be applied to the extraction of distortion terms to any desired order in many physical systems in a general and systematic way.

  14. Red Blood Cell Forms in Acne and their Complex Treatment with Application of Light-Emitting Diode Influences

    Directory of Open Access Journals (Sweden)

    Farhad F. Khashimov

    2014-12-01

    Full Text Available The efficiency of the laser light-emitting diode (LED that is used in the complex treatment of acne was studied with light microscopy, scanning electron microscopy, and planimetry. It was found that the light emission of the photon matrix by A.Korobov–B.Korobov “Barva-Fleks/BIR” (λ1=470nm and λ2=940 nm combined with the drug treatment are an effective means for the treatment of acne.

  15. Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes.

    Science.gov (United States)

    Shi, Zhi-Feng; Zhang, Yuan-Tao; Cui, Xi-Jun; Zhuang, Shi-Wei; Wu, Bin; Chu, Xian-Wei; Dong, Xin; Zhang, Bao-Lin; Du, Guo-Tong

    2015-06-07

    Vertically aligned ZnO/MgO coaxial nanowire (NW) arrays were prepared on sapphire substrates by metal-organic chemical vapor deposition combined with a sputtering system. We present a comparative investigation of the morphological and optical properties of the produced heterostructures with different MgO layer thicknesses. Photoluminescence measurements showed that the optical performances of ZnO/MgO coaxial NWs were strongly dependent on the MgO layer thickness. The intensity of deep-level emission (DLE) decreased monotonously with the increase of MgO thickness, while the enhancement of ultraviolet (UV) emission showed a critical thickness of 15 nm, achieving a maximum intensity ratio (∼226) of IUV/IDLE at the same time. The significantly improved exciton emission efficiency of the coaxial NW structures allows us to study the surface passivation effect, photogenerated carrier confinement and transfer in terms of energy band theory. More importantly, we achieved an ultralow threshold (4.5 mA, 0.58 A cm(-2)) electrically driven UV lasing action based on the ZnO/MgO NW structures by constructing an Au/MgO/ZnO metal/insulator/semiconductor diode, and the continuous-current-driven diode shows a good temperature tolerance. The results obtained on the unique optical properties of ZnO/MgO coaxial NWs shed light on the design and development of ZnO-based UV laser diodes assembled with nanoscale building blocks.

  16. Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser; Caracteristicas dimensionales de soldadura formadas sobre el acero AISI 1045 mediante la aplicacion del laser diodo de alta potencia

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

    2004-07-01

    The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs.

  17. Efficient second harmonics generation of a laser-diode-pumped Nd:YAG laser and its applications. Laser diode reiki Nd:YAG laser no kokoritsu daini kochoha hassei to sono oyo

    Energy Technology Data Exchange (ETDEWEB)

    Kubota, S.; Oka, M. (Sony Corp., Tokyo (Japan))

    1991-08-10

    Stabilization of the second harmonics in a laser-diode-pumped Nd:YAG laser and its application are described. The laser is a quantum noise limiting laser, in which a mode competing noise is generated from an interaction between the laser medium Nd:YAG and the type II nonlinear optical crystal KTiOPO{sub 4} when generating a second harmonics in the resonator. However, the quantum noise limiting second harmonics was obtained by means of inserting (1/4) wave length plate in the resonator to release the bond between two intersecting inherent polarization modes. This stabilized green laser is of a single lateral mode is nearly free of aberration. Therefore, an optical disc prototype having three times as much of the currently used density was made using an objective lens having high number of openings to collect lights, which was verified capable of regeneration at a high signal to noise ratio. In addition, higher output is possible by means of parallelizing the excitation, and high output is realized from edge excitation at a fiber bundle. 18 refs., 3 figs.

  18. Fabrication and Characterization of Planar Dipole Antenna Integrated with GaAs Based-Schottky Diode for On-chip Electronic Device Application

    Energy Technology Data Exchange (ETDEWEB)

    Mustafa, Farahiyah; Hashim, Abdul Manaf; Parimon, Norfarariyanti; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia); Aziz, Azlan Abdul; Hashim, Md Roslan, E-mail: manaf@fke.utm.my [Nano-Optoelectronics Research, Faculty of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia)

    2011-02-15

    The design and RF characteristics of planar dipole antennas facilitated with coplanar waveguide (CPW) structure on semi-insulated GaAs are performed and confirmed to work in super high frequency (SHF) range. As expected, the fundamental resonant frequency shifts to higher frequency when the length of antenna decreases. Interestingly, the resonant frequencies of antenna are almost unchanged with the variation of antenna width and metal thickness. It is shown experimentally that return loss down to -54 dB with a metal thickness of 50 nm is obtainable. Preliminary investigation on design, fabrication, and DC and RF characteristics of the integrated device (planar dipole antenna + Schottky diode) on AlGaAs/GaAs HEMT structure is presented. From the preliminary direct irradiation experiments using the integrated device, the Schottky diode is not turned on due to weak reception of RF signal by dipole antenna. Further extensive considerations on the polarization of irradiation etc. need to be carried out in order to improve the signal reception. These preliminary results provide a new breakthrough for on-chip electronic device application in nanosystems.

  19. Novel Single-Frequency Diode Pumped Solid-State Lasers and Their Applications in Laser Ranging and Velocimetry

    Institute of Scientific and Technical Information of China (English)

    杨苏辉; 吴克瑛; 魏光辉

    2001-01-01

    Two models of laser diode pumped unidirectional single-frequency ring lasers with maximum single-frequency output powers of 1 W and 780mW are investigated. The statistical linewidth of the free-run laser is measured to be 2.1 kHz within 5μs by using a single-mode fibre link. We use the monolithic laser to measure the angular speed of a spinning motor and simulate a linearly frequency modulated continuous-wave ladar system in the laboratory.

  20. Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

    Science.gov (United States)

    Zhou, Yiyin; Dou, Wei; Du, Wei; Pham, Thach; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Mosleh, Aboozar; Alher, Murtadha; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard; Li, Baohua; Mortazavi, Mansour; Naseem, Hameed; Yu, Shui-Qing

    2016-07-01

    Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge double heterostructures (DHS) that were grown directly on a Si substrate via a chemical vapor deposition system. Both photoluminescence and electroluminescence spectra have been characterized at temperatures from 300 to 77 K. Based on our theoretical calculation, all GeSn alloys in this study are indirect bandgap materials. However, due to the small energy separation between direct and indirect bandgap, and the fact that radiative recombination rate greater than non-radiative, the emissions are mainly from the direct Γ-valley to valence band transitions. The electroluminescence emissions under current injection levels from 102 to 357 A/cm2 were investigated at 300 K. The monotonic increase of the integrated electroluminescence intensity was observed for each sample. Moreover, the electronic band structures of the DHS were discussed. Despite the indirect GeSn bandgap owing to the compressive strain, type-I band alignment was achieved with the barrier heights ranging from 11 to 47 meV.

  1. Infrared tunable diode laser applications: (i) atmospheric pollutants monitoring (ii) gas phase kinetics of elementary reactions; Application des diodes laser infrarouge accordables a deux problematiques: (i) la metrologie de polluants (ii) la cinetique des reactions elementaires

    Energy Technology Data Exchange (ETDEWEB)

    Dusanter, S.

    2002-12-15

    Infrared Tunable Diode Laser Absorption Spectroscopy provides sensibility, selectivity and high temporal resolution. We have applied this technique to atmospheric trace pollutants monitoring and to gas phase kinetics of elementary reactions. For metrology, we have developed a novel and effective protocol: pressure increase measurements. It has been applied to monitoring nitrous oxide, formaldehyde, acetaldehyde and 1,3-butadiene, in air or car exhausts. This work represents a first step toward the elaboration of a compact and portable instrument. The kinetic setup, where reactions are initiated by laser photolysis, has been validated with the well-known reactions of formyl and hydroxymethyl radicals with oxygen. A preliminary study of the rate constant for the unimolecular decomposition of pivaloyl radical has been performed. (author)

  2. "Mama's Boy; Preacher's Son": A Memoir

    Science.gov (United States)

    Whitlock, Reta Ugena

    2010-01-01

    "Mama's Boy; Preacher's Son" is Kevin Jennings's autobiographical account of growing up gay in the Southern United States. In his memoir, Jennings shares formative experiences relating to his impoverished childhood and his career as teacher and social activist. His rich description of the influence of family relationships on his personal and…

  3. "Mama's Boy; Preacher's Son": A Memoir

    Science.gov (United States)

    Whitlock, Reta Ugena

    2010-01-01

    "Mama's Boy; Preacher's Son" is Kevin Jennings's autobiographical account of growing up gay in the Southern United States. In his memoir, Jennings shares formative experiences relating to his impoverished childhood and his career as teacher and social activist. His rich description of the influence of family relationships on his personal…

  4. Preparation and characterization of electrodeposited ZnO and ZnO:Co nanorod films for heterojunction diode applications

    Energy Technology Data Exchange (ETDEWEB)

    Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Arslan, Andaç [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Ilican, Saliha [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Hür, Evrim [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Aksoy, Seval; Caglar, Mujdat [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey)

    2013-10-15

    was affected significantly by Co content. The pn heterojunction diodes were fabricated and the diode parameters were determined from the analysis of the measured dark current–voltage curves. Rectifying behavior was observed from the I–V characteristics of these heterojunction diodes.

  5. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  6. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  7. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  8. Compression des fichiers son de type wave.

    OpenAIRE

    BAKLI, Meriem

    2014-01-01

    Ce travail de projet de fin d’étude s’intéresse à une étude comparative sur la compression d’un fichier son. La compression est l'action utilisée pour réduire la taille physique d'un bloc d'information.. Il existe plusieurs algorithmes pour la compression comme HUFFMAN, …etc. Nous avons fait la compression d’un fichier son de format WAVE non compressé à un fichier MP3 compressé avec différent format de codage, différent frame et quelque soit le fichier mono où stéréo. A partir ...

  9. Paradox of Denials in All My Sons

    Institute of Scientific and Technical Information of China (English)

    雷慧慧

    2014-01-01

    Arthur Miller, who was one of the greatest American playwrights of the 20th century. In All My Sons, different sorts of denials lead to the family’s collapse and Keller’s death. Paradoxically, the very denial that is designed to protect him from prose-cution and incarceration is followed by a chain of events that lead to Keller’s own self-imprisonment and self-imposed execu-tion. Denial also exists in the history of some countries, such as Germany, Japan and America and so on. My paper aims to ex-plore the paradox of denial both in our history and in literature works. My paper will demonstrate that denial has some negative effects both on the outer-world and the inner-world through thorough analysis on the characters in All My Sons.

  10. Cuidados invisibles: ¿son suficientemente reconocidos?

    Directory of Open Access Journals (Sweden)

    Rosanna de la Rosa Eduardo

    Full Text Available Los cuidados invisibles son un elemento central y fundamental de la práctica de la Enfermería y son la base de su identidad profesional. La Enfermería ha sufrido un importante y positivo proceso de profesionalización en los últimos 150 años, sin embargo, los cuidados invisibles siguen siendo poco reconocidos, a pesar de su importancia en la recuperación y en la calidad de vida de los usuarios. En este trabajo se analizan brevemente las grandes transformaciones sociales actuales que obligan a replantearse la necesidad de visibilizar los cuidados invisibles, se plantean interrogantes clave para abordar esta discusión y se proponen una serie de acciones concretas para avanzar en este reconocimiento.

  11. Lighting with laser diodes

    Science.gov (United States)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  12. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  13. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    Science.gov (United States)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  14. Discovery of a phosphor for light emitting diode applications and its structural determination, Ba(Si,Al)5(O,N)8:Eu2+.

    Science.gov (United States)

    Park, Woon Bae; Singh, Satendra Pal; Sohn, Kee-Sun

    2014-02-12

    Most of the novel phosphors that appear in the literature are either a variant of well-known materials or a hybrid material consisting of well-known materials. This situation has actually led to intellectual property (IP) complications in industry and several lawsuits have been the result. Therefore, the definition of a novel phosphor for use in light-emitting diodes should be clarified. A recent trend in phosphor-related IP applications has been to focus on the novel crystallographic structure, so that a slight composition variance and/or the hybrid of a well-known material would not qualify from either a scientific or an industrial point of view. In our previous studies, we employed a systematic materials discovery strategy combining heuristics optimization and a high-throughput process to secure the discovery of genuinely novel and brilliant phosphors that would be immediately ready for use in light emitting diodes. Despite such an achievement, this strategy requires further refinement to prove its versatility under any circumstance. To accomplish such demands, we improved our discovery strategy by incorporating an elitism-involved nondominated sorting genetic algorithm (NSGA-II) that would guarantee the discovery of truly novel phosphors in the present investigation. Using the improved discovery strategy, we discovered an Eu(2+)-doped AB5X8 (A = Sr or Ba, B = Si and Al, X = O and N) phosphor in an orthorhombic structure (A21am) with lattice parameters a = 9.48461(3) Å, b = 13.47194(6) Å, c = 5.77323(2) Å, α = β = γ = 90°, which cannot be found in any of the existing inorganic compound databases.

  15. Architectural Engineering of Nanowire Network Fine Pattern for 30 μm Wide Flexible Quantum Dot Light-Emitting Diode Application.

    Science.gov (United States)

    Fang, Yunsheng; Ding, Ke; Wu, Zhicong; Chen, Hongting; Li, Wenbo; Zhao, Sheng; Zhang, Yanli; Wang, Lei; Zhou, Jun; Hu, Bin

    2016-11-22

    Replacing rigid metal oxides with flexible alternatives as a next-generation transparent conductor is important for flexible optoelectronic devices. Recently, nanowire networks have emerged as a new type of transparent conductor and have attracted wide attention because of their all-solution-based process manufacturing and excellent flexibility. However, the intrinsic percolation characteristics of the network determine that its fine pattern behavior is very different from that of continuous films, which is a critical issue for their practical application in high-resolution devices. Herein, a simple optimization approach is proposed to address this issue through the architectural engineering of the nanowire network. The aligned and random silver nanowire networks are fabricated and compared in theory and experimentally. Remarkably, network performance can be notably improved with an aligned structure, which is helpful for external quantum efficiency and the luminance of quantum dot light-emitting diodes (QLEDs) when the network is applied as the bottom-transparent electrode. More importantly, the advantage introduced by network alignment is also of benefit to fine pattern performance, even when the pattern width is narrowed to 30 μm, which leads to improved luminescent properties and lower failure rates in fine QLED strip applications. This paradigm illuminates a strategy to optimize nanowire network based transparent conductors and can promote their practical application in high-definition flexible optoelectronic devices.

  16. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

  17. "Quasi-freestanding" graphene-on-single walled carbon nanotube electrode for applications in organic light-emitting diode.

    Science.gov (United States)

    Liu, Yanpeng; Jung, Eun; Wang, Yu; Zheng, Yi; Park, Eun Ji; Cho, Sung Min; Loh, Kian Ping

    2014-03-12

    An air-stable transparent conductive film with "quasi-freestanding" graphene supported on horizontal single walled carbon nanotubes (SWCNTs) arrays is fabricated. The sheet resistance of graphene films stacked via layer-by-layer transfer (LBL) on quartz, and modified by 1-Pyrenebutyric acid N-hydroxysuccinimide ester (PBASE), is reduced from 273 Ω/sq to about 76 Ω/sq. The electrical properties are stable to heat treatment (up to 200 ºC) and ambient exposure. Organic light-emitting diodes (OLEDs) constructed of this carbon anode (T ≈ 89.13% at 550 nm) exhibit ≈88% power efficiency of OLEDs fabricated on an ITO anode (low turn on voltage ≈3.1 eV, high luminance up to ≈29 490 cd/m(2) , current efficiency ≈14.7 cd/A). Most importantly, the entire graphene-on-SWCNT hybrid electrodes can be transferred onto plastic (PET) forming a highly-flexible OLED device, which continues to function without degradation in performance at bending angles >60°.

  18. Characterizing the resolvability of real superluminescent diode sources for application to optical coherence tomography using a low coherence interferometry model

    Science.gov (United States)

    Jansz, Paul Vernon; Richardson, Steven; Wild, Graham; Hinckley, Steven

    2014-08-01

    The axial resolution is a critical parameter in determining whether optical coherent tomography (OCT) can be used to resolve specific features in a sample image. Typically, measures of resolution have been attributed to the light source characteristics only, including the coherence length and the point spread function (PSF) width of the OCT light sources. The need to cost effectively visualize the generated PSF and OCT cross-correlated interferogram (A-scan) using many OCT light sources have led to the extrinsic evolution of the OCT simulation model presented. This research indicated that empirical resolution in vivo, as well as depending on the light source's spectral characteristics, is also strongly dependent on the optical characteristics of the tissue, including surface reflection. This research showed that this reflection could be digitally removed from the A-scan of an epithelial model, enhancing the stratum depth resolution limit (SDRL) of the subsurface tissue. Specifically, the A-scan portion above the surface, the front surface interferogram, could be digitally subtracted, rather than deconvolved, from the subsurface part of each A-scan. This front surface interferogram subtraction resulted in considerably reduced empirical SDRLs being much closer to the superluminescent diodes' resolution limits, compared to the untreated A-scan results.

  19. Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes

    Science.gov (United States)

    Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Wang, Chunliang; Liu, Yichun

    2016-08-01

    In this paper, we prepared the silver nanowires (AgNWs)/aluminum-doped zinc oxide (AZO) composite transparent conducting electrodes for n-ZnO/p-GaN heterojunction light emitting-diodes (LEDs) by drop casting AgNW networks and subsequent atomic layer deposition (ALD) of AZO at 150 °C. The contact resistances between AgNWs were dramatically reduced by pre-annealing in the vacuum chamber before the ALD of AZO. In this case, AZO works not only as the conformal passivation layer that protects AgNWs from oxidation, but also as the binding material that improves AgNWs adhesion to substrates. Due to the localized surface plasmons (LSPs) of the AgNWs resonant coupling with the ultraviolet (UV) light emission from the LEDs, a higher UV light extracting efficiency is achieved from LEDs with the AgNWs/AZO composite electrodes in comparison with the conventional AZO electrodes. Additionally, the antireflective nature of random AgNW networks in the composite electrodes caused a broad output light angular distribution, which could be of benefit to certain optoelectronic devices like LEDs and solar cells.

  20. External cavity based single mode Fabry-Pérot laser diode and its application towards all-optical digital circuits

    Science.gov (United States)

    Nakarmi, Bikash; Zhang, Xuping; Won, Yong Hyub

    2012-11-01

    We have proposed a novel approach of realizing all-optical logic gates and combinational circuit using external cavity based single mode Fabry-Pérot laser diodes (SMFP-LDs). Different techniques and critical parameters for injection locking the any one of the modes of SMFP-LDs are discussed. Taking consideration of wavelength detuning and input injected power, we have proposed and demonstrated multi-input injection locking, supporting beam injection locking with the conventional injection locking which are used for demonstrating different logic gates (NAND, AND, XNOR, XOR, NOT, NOR) and digital circuits (Half adder and Comparator). Since we have used SMFP-LDs, there is no requirement of additional probe beam and associated components as required by other optical technologies making the realization simple in configuration, cost effective and power efficient. Clear output waveforms, eye diagrams, risingfalling times and BER are presented to verify the proposed method. All-optical logic units and digital circuit are demonstrated at the data rate of 10 Gbps with the waveform of NRZ signal waveform and measured eye diagram and BER of the PRBS of 231-1 signal. The maximum power penalty among all demonstrated units is below 1.4 dB at the BER of 10-9.

  1. Multiple and broad frequency response Gunn diodes

    Science.gov (United States)

    Pilgrim, N. J.; Macpherson, R. F.; Khalid, A.; Dunn, G. M.; Cumming, D. R. S.

    2009-10-01

    Gunn diodes, operating in transit time mode, are usually thought of as incapable of generating power at multiple frequencies or over a broad frequency range. In this paper, we report experimental results showing that these diodes can generate power at several frequencies and, using Monte Carlo simulations of both planar and vertical devices, we offer an explanation of how this unusual behaviour may come into being and suggest possible applications for this novel device.

  2. Varactor diodes for millimeter and submillimeter wavelengths

    Science.gov (United States)

    Rizzi, Brian J.; Hesler, Jeffrey L.; Dossal, Hasan; Crowe, Thomas W.

    1992-01-01

    Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.

  3. ?Cuales son las amenazas o peligros volcanicos?

    Science.gov (United States)

    Myers, Bobbie; Brantley, Steven R.; Stauffer, Peter; Hendley, James W.

    2000-01-01

    Los volcanes son capaces de producir numerosos peligros geologicos e hidrologicos. Los cientificos del Servicio Geologico de los EE. UU. (USGS, por sus siglas en ingles) y de otras instituciones alrededor del mundo estan estudiando los peligros de muchos de los centenares de volcanes activos y potencialmente activos del mundo. Estos cientificos vigilan muy de cerca la actividad de algunos de los volcanes mas peligrosos, por lo que estan preparados para alertar a las autoridades y/o a la poblacion en caso de que aumente sustancialmente la probabilidad de que ocurra una erupcion u otro evento peligroso.

  4. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes.

    Science.gov (United States)

    Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

    2017-09-19

    Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at ~ 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at ~ 5 V, the highest luminance (160 cd/m(2)) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

  5. My Son 22.10.11

    Directory of Open Access Journals (Sweden)

    Rebecca Baillie

    2013-01-01

    Full Text Available 'My Son 22.10.11' was made immediately following a miscarriage 8 weeks into pregnancy. After bleeding lightly for a couple of hours, I went to the toilet and a large bloody mass fell from within me. I knew that I could not flush this away, and that to retrieve the mass was my only chance to connect with the unborn foetus. I fished the contents from the bottom of the toilet bowl using my hands and carried them into my small studio. I found some paper and began to dissect the mass. At the centre, I found the tiny, cold, hard foetus. I kissed it and then began to use it as a kind of painting tool, drawing the outline of the lost child using its very own flesh and blood. I knew that to create a lasting and tangible portrait of 'my son' was the best way to understand the somewhat unreal and fleeting experience of miscarriage. I thought of Frida Kahlo while making the work, thinking 'thank God' that I had a reference to miscarriage before it happened to me. I also thought of my childhood days spent on our family pig farm, and of all the dead pig foetuses that I had seen at various stages of development. Before the miscarriage, I thought little about the subject; afterwards, I recognise the profundity of the creation of a life that is never born. The experience is so common, yet so very rarely discussed or depicted.

  6. Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Min Ju; Kim, Tae Geun

    2016-03-01

    We report performance improvements in near-ultraviolet (NUV) light-emitting diodes (LEDs) using various metal-doped indium tin oxide (ITO/metals). Metals with an orbital energy gap greater than that of an In atom (e.g., Ti, Ga, Ge, and Al) are deposited on ITO, and subsequent annealing is performed to improve optical transmittance of ITO due to effective bandgap increase via the linear combination of atomic orbitals, as well as electrical conductivity; thus, current spreading via metal-doping effect at the surface of ITO. As a result, the ITO/metals (annealed at 550 °C, 1 min) exhibit 90.5-94.7% transmittance at 385 nm and a specific contact resistance of 2.1-3.0 × 10(-3) Ω cm(2), whereas the reference ITOs exhibit 76.5-89.5% and 3.2-4.5 × 10(-3) Ω cm(2), respectively. Compared to NUV LEDs using conventional ITO (60 nm), the InGaN/AlGaInN NUV LED using ITO (110 nm)/metal (3 nm) on average exhibits a 70% increase in light output power at 100 mA and a 2% decrease in forward voltage at 20 mA, with more uniform and brighter emission images. We also identified the origin for the improvement by analyzing the surface of ITO/metals using X-ray photoelectron spectroscopy and Auger electron spectroscopy. This approach could offer a simple, effective way to enhance the overall efficiency of conventional NUV LEDs using ITO.

  7. A combined application of tunable diode laser absorption spectroscopy and isothermal micro-calorimetry for calorespirometric analysis.

    Science.gov (United States)

    Brueckner, David; Solokhina, Anna; Krähenbühl, Stephan; Braissant, Olivier

    2017-08-01

    Calorespirometry is the simultaneous analysis of the rate of heat emission (Rq), O2 consumption (RO2) and CO2 production (RCO2) by living systems such as tissues or organism cultures. The analysis provides useful knowledge about thermodynamic parameters relevant for e.g. biotechnology where parameter based yield maximization (fermentation) is relevant. The determination of metabolism related heat emission is easy and normally done by a calorimeter. However, measuring the amount of consumed O2 and produced CO2 can be more challenging, as additional preparation or instrumentation might be needed. Therefore, tunable diode laser absorption spectroscopy (TDLAS) was investigated as an alternative approach for respirometric analysis in order to facilitate the data collection procedure. The method determines by a spectroscopic laser non-invasively CO2 and O2 gas concentration changes in the respective vial headspaces. The gathered growth data from Pseudomonas aeruginosa cultured in two different scarce media was used to compute respiratory quotient (RQ) and calorespirometric ratios (CRCO2 [Rq/RCO2], CRO2 [Rq/RO2]). A comparison of the computed (experimental) values (for RQ, CRCO2 and CRO2) with values reported in the literature confirmed the appropriateness of TDLAS in calorespirometric studies. Thus, it could be demonstrated that TDLAS is a well-performing and convenient way to evaluate non-invasively respiratory rates during calorespirometric studies. Therefore, the technique is definitively worth to be investigated further for its potential use in research and in diverse productive environments. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Assembly of light-emitting diode based on hydrophilic CdTe quantum dots incorporating dehydrated silica gel.

    Science.gov (United States)

    Du, Jinhua; Wang, Chunlei; Xu, Xiaojing; Wang, Zhuyuan; Xu, Shuhong; Cui, Yiping

    2016-03-01

    Stable photoluminescence QD light-emitting diodes (QD-LEDs) were made based on hydrophilic CdTe quantum dots (QDs). A quantum dot-inorganic nanocomposite (hydrophilic CdTe QDs incorporating dehydrated silica gel) was prepared by two methods (rotary evaporation and freeze drying). Taking advantage of its viscosity, plasticity and transparency, dehydrated silica gel could be coated on the surface of ultraviolet (UV) light LEDs to make photoluminescence QD-LEDs. This new photoluminescence QD-LED, which is stable, environmentally non-toxic, easy to operate and low cost, could expand the applications of hydrophilic CdTe QDs in photoluminescence. Copyright © 2015 John Wiley & Sons, Ltd.

  9. Evaluation of Light-Emitting Diode (LED-660 Nm) Application over Primary Osteoblast-Like Cells on Titanium Surfaces: An In Vitro Study

    Science.gov (United States)

    Cankaya, Abdulkadir Burak; Erdem, Mehmet Ali; Erdem, Arzu Pınar; Erguven, Mine; Aybar, Buket; Kasapoglu, Cetin; Bilir, Ayhan

    2011-01-01

    Background: The goal of this study was to evaluate the behavior of neonatal rat calvarial osteoblast-like cells cultured on different implant surfaces and exposed once or three times to a 660-nm light-emitting diode (LED). Methods: An LED with a 660-nm wavelength was applied once or three times to cultured cells on standard and modified sandblasted acid-etched surfaces (SLA and SLActive; Straumann, Basel, Switzerland). To analyze the effect of the LED on cell proliferation, numbers, and viability, cells were cultured on titanium discs, and measurements were taken after 72 h. Cell proliferation rates were assessed using a bromodeoxyuridine immunohistochemical technique. Cell morphologies were evaluated by scanning electron microscopy (SEM). Results: Osteoblast-like cells proliferated on all tested surfaces, with differences among groups in cell counts and DNA synthesis values. The application of one LED treatment caused a significant increase in cell count in the SLActive group in comparison with the SLA group (p = 0.001), whereas the application of three LED treatments caused a significant decrease in cell count in the SLA group compared with the SLActive group (p < 0.001). After 72 h, the number of cells was highest in the SLActive group exposed once to the LED. Conclusions: One LED application in the SLActive group resulted in significantly increased cell numbers. However, these findings were not exactly compatible with the SEM findings, which demonstrated fewer cells and weak attachments between cells and to the surface. Thus, further studies using different LED application times are needed to clarify the reason for the increased number of cells that are apparently incapable of attaching to the titanium surfaces after 72 h. PMID:22022211

  10. Terahertz Diode Development

    Science.gov (United States)

    2009-03-23

    Gunn Diode , Negative Differential Resistance, Ballistic Transport, GaN, THz, Co-planar Resonator 16. SECURITY CLASSIFICATION OF: REPORT U b...Report DATES COVERED (From - Jo) 1 January 2004- 31 December 2008 4. TITLE AND SUBTITLE Terahertz Diode Development 5a. CONTRACT NUMBER N00014...current-voltage oscillations at the terminals of the diode at a frequency which is, to first order, determined by the average transit time of the EAL

  11. L'astronomie et son histoire

    CERN Document Server

    Roy, Jean-René

    1982-01-01

    Le livre de Jean-René Roy nous présente une vaste synthèse des connaissances présentes en astronomie. Le grand mérite du livre est de dérouler son sujet en parallèle avec une histoire de l'astronomie. Le côté historique est ici beaucoup plus qu'un luxe. Il redonne leurs dimensions vraies aux réponses qu'apporte l'astronomie. Pour bien sentir la nature d'une étape franchie, il faut aussi avoir vécu la situation telle qu'elle se présentait avant. Et les fiches personnelles incluses dans le livre ont l'intérêt de nous rapprocher encore plus du "" feu de l'action "". Écrit dans un style direct et

  12. Lo que son mujeres en los escenarios

    Directory of Open Access Journals (Sweden)

    González Cañal, Rafael

    2007-06-01

    Full Text Available In this article I review the publishing and stage trajectory of one of Rojas Zorrilla’s most significant plays: Lo que son mujeres. As well as collecting a list of the different editions, I emphasize the 1822 version by the Mexican Manuel Eduardo de Gorostiza, which started a new renaissance period for this play on stage. I also analyze the 1899 one-act version by Emilio Bobadilla. Finally, I include all the different productions between the 17th and the 19th centuries, and address the little interest aroused in the 20th century–suffice to say that it has not been staged even during these early years of the 21st century when the centenary of Rojas Zorrilla is being celebrated.En este artículo se hace un repaso detallado de la fortuna editorial y escénica de una de las obras más significativas de Rojas Zorrilla: Lo que son mujeres. Aparte de recoger las diferentes ediciones de la misma, se hace hincapié en la refundición del mexicano Manuel Eduardo de Gorostiza, estrenada en 1822, que abrió un período de cierta recuperación de este texto dramático en los escenarios. Se analiza también la refundición que llevó a cabo en un solo acto Emilio Bobadilla en 1899. Finalmente, se registran todas las representaciones conocidas de la obra desde el siglo XVII hasta el siglo XIX y se constata el poco interés que ha despertado en los escenarios del siglo XX. Incluso en los últimos años, en los que los montajes de obras de Rojas comienzan a ser más frecuentes, esta obra no ha sido todavía llevada a escena.

  13. Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode.

    Science.gov (United States)

    Baek, Sung-Doo; Biswas, Pranab; Kim, Jong-Woo; Kim, Yun Cheol; Lee, Tae Il; Myoung, Jae-Min

    2016-05-25

    This study explores low-temperature solution-process-based seed-layer-free ZnO p-n homojunction light-emitting diode (LED). In order to obtain p-type ZnO nanodisks (NDs), antimony (Sb) was doped into ZnO by using a facile chemical route at 120 °C. The X-ray photoelectron spectra indicated the presence of (SbZn-2VZn) acceptor complex in the Sb-doped ZnO NDs. Using these NDs as freestanding templates, undoped n-type ZnO nanorods (NRs) were epitaxially grown at 95 °C to form ZnO p-n homojunction. The homojunction with a turn-on voltage of 2.5 V was found to be significantly stable up to 100 s under a constant voltage stress of 5 V. A strong orange-red emission was observed by the naked eye under a forward bias of 5 V. The electroluminescence spectra revealed three major peaks at 400, 612, and 742 nm which were attributed to the transitions from Zni to VBM, from Zni to Oi, and from VO to VBM, respectively. The presence of these deep-level defects was confirmed by the photoluminescence of ZnO NRs. This study paves the way for future applications of ZnO homojunction LEDs using low-temperature and low-cost solution processes with the controlled use of native defects.

  14. Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok [Dept. of Display and Semiconductor Physics, Korea University, Chungnam (Korea, Republic of); Yoo, Suk Jae; Lee, Bonju [National Fusion Research Institute, 52, Yuseong-Gu, Deajeon, 305-333 (Korea, Republic of); Hong, MunPyo, E-mail: goodmoon@korea.ac.kr [Dept. of Display and Semiconductor Physics, Korea University, Chungnam (Korea, Republic of)

    2011-08-01

    A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

  15. Application of the laser diode with central wavelength 975 nm for the therapy of neurofibroma and hemangiomas

    Science.gov (United States)

    Szymańczyk, Jacek; Sawczak, Mirosław; Cenian, Witold; Karpienko, Katarzyna; Jędrzejewska-Szczerska, Małgorzata; Cenian, Adam

    2017-01-01

    This paper presents a newly developed dermatological laser (with a central wavelength 975 nm) for application in therapies requiring deep penetration of tissue, e.g., cutaneous (dermal) neurofibroma (von Recklinghausen disease) and hemangiomas. This laser can work either in pulses or continues wave mode. Laser radiation is transmitted toward the application region by optical fiber with a diameter of 0.6 mm. The compact design of the laser facilitates its transport and increases the comfort of use.

  16. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  17. Short-pulsed diode lasers as an excitation source for time-resolved fluorescence applications and confocal laser scanning microscopy in PDT

    Science.gov (United States)

    Kress, Matthias; Meier, Thomas H.; El-Tayeb, Tarek A. A.; Kemkemer, Ralf; Steiner, Rudolf W.; Rueck, Angelika C.

    2001-11-01

    This article describes a setup for subcellular time-resolved fluorescence spectroscopy and fluorescence lifetime measurements using a confocal laser scanning microscope in combination with a short pulsed diode laser for fluorescence excitation and specimen illumination. The diode laser emits pulses at 398 nm wavelength with 70 ps full width at half maximum (FWHM) duration. The diode laser can be run at a pulse repetition rate of 40 MHz down to single shot mode. For time resolved spectroscopy a spectrometer setup consisting of an Czerny Turner spectrometer and a MCP-gated and -intensified CCD camera was used. Subcellular fluorescence lifetime measurements were achieved using a time-correlated single photon counting (TCSPC) module instead of the spectrometer setup. The capability of the short pulsed diode laser for fluorescence imaging, fluorescence lifetime measurements and time-resolved spectroscopy in combination with laser scanning microscopy is demonstrated by fluorescence analysis of several photosensitizers on a single cell level.

  18. Photovoltaic-module bypass-diode encapsulation. Annual report

    Energy Technology Data Exchange (ETDEWEB)

    1983-06-20

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented in this annual report. A comprehensive survey of available pad-mounted PN junction and Schottky diodes led to the selection of Semicon PN junction diode cells for this application. Diode junction-to-heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1/sup 0/C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150/sup 0/C. Based on the results of a detailed thermal analysis, which covered the range of bypass currents from 2 to 20 amperes, three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed and fabricated. Thermal testing of these modules has enabled the formation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally-mounted packaged diodes. An assessment of bypass diode reliability, which relies heavily on rectifying diode failure rate data, leads to the general conclusion that, when proper designed and installed, these devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  19. Sons fricativos surdos Voiceless fricatives sounds

    Directory of Open Access Journals (Sweden)

    Carla Aparecida Cielo

    2008-01-01

    Full Text Available TEMA: características dos sons fricativos surdos. OBJETIVO: propor uma revisão da literatura pertinente às características acústicas, fonéticas e fonológicas dos fonemas fricativos surdos que integram o sistema fonológico do Português. Além disso, são descritas suas aplicações na terapia vocal. CONCLUSÕES: os fricativos são fonemas agudos, abrangendo de 2500 a 8000Hz; são plenamente adquiridos até os 3:7 anos de idade; o /s/ que também é o mais afetado em casos de frênulo lingual curto; a omissão do /s/ é uma das ocorrências mais freqüentes na alfabetização; sendo que, no desvio fonológico e na fissura lábio-palatina, freqüentemente ocorre comprometimento de toda a classe de fricativos. Na avaliação de voz, os fricativos são mencionados com as medidas de TMF e relação s/z, bem como seu uso como sons de apoio na fonoterapia.BACKGROUND: characteristics of voiceless fricative sounds PURPOSE: to review the literature related to acoustic, phonetics and phonological characteristics of voiceless fricative sounds that are part of the phonological system of the Portuguese Language. Furthermore, it describes the use of these sounds in voice therapy. CONCLUSIONS: fricatives are acute phonemes comprised between 2500 and 8000 Hz; they are fully acquired up to the age of 3:7 years; the /s/, which is the most affected in cases of short lingual frenum; omission of the /s/ is one of the most frequent occurrences during literacy education; and in the phonological deviation and labial-palatine fissure the entire class of fricatives is frequently affected. In voice assessment, fricative sounds are mentioned as TMF measurements and s/z relationship, and their use as support sounds in speech therapy.

  20. IMPATT diodes. Citations from the NTIS data base

    Science.gov (United States)

    Reed, W. E.

    1980-04-01

    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  1. Nouvelle technique d'élevage de l'acarien phyllophage Tetranychus urticae Koch (Acari : Tetranychidae et son application à l'étude de l'efficacité de quelques acaricides sur pomme de terre (Solarium tuberosum L.

    Directory of Open Access Journals (Sweden)

    Badegana, AM.

    2000-01-01

    Full Text Available A New Rearing Technique of Phytophagous Mite Tetranychus urticae Koch (Acari : Tetranychida and its Application in the Study of the Efficacy of some Acaricides on Potato [Solanum tuberosum L.. A 5 cm diameter leaf disc of potato or another host plant (or four on 2.5 cm diameter was used in a Petri dish of 9 cm diameter for the rearing technique. This leaf disc, pierced in its centre, slides along a rustproof pin and floats on a 1 mm thick lamina of demineralized fresh water. Water is a "strong barrier" which confines the tetranychid mites on the leaf disc, even if this one does not corne from a host plant (tetranychid mites deprived of food. This rearing technique was used as a bioassay to test the effectiveness of acaricides (pyrimiphos-methyl, bromopropylate, fenpropathrin, dienochlor on the developmental stages of Tetranychus urticae. The ovicidal activity against the eggs of one, three, seven days old (the eggs incubation duration being 8.1 ±0.15 days was also studied. The results obtained show that bromopropylate, fenpropathrin and dienochlor have an ovicidal activity against the eggs of the different ages, but dienochlor has the highest efficiency (90 % mortality. Pyrimiphos-methyl is only active against the seven-day old eggs and bromopropylate has a high efficiency only on the one-day old eggs. Concerning the other developmental stages such as chrysalis (protochrysalis, deu-tochrysalis, teleiochrysalis and mobile stages (larva, protonymph, deutonymph and adult female, pyrimiphos-methyl has de highest efficiency (90 % mortality ; dienochlor also, except mobile stages. Bromopropylate has no activity against the chrysalis and mobile stages and fenpropathrin has a remarkable repulsive effect.

  2. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.;

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers...

  3. Analytical application of 2f-wavelength modulation for isotope selective diode laser graphite furnace atomic absorption spectroscopy.

    Science.gov (United States)

    Wizemann, H D

    2000-01-01

    Experiences in the analytical application of the 2f-wavelength modulation technique for isotope selective atomic absorption spectroscopy in a graphite furnace are reported. Experimental as well as calculated results are presented, mainly for the natural lithium isotopes. Sensitivity, linearity, and (isotope) selectivity are studied by intensity modulation and wavelength modulation. High selectivities can be attained, however, on the cost of detection power. It is shown that the method enables the measurement of lithium isotope ratios larger than 2000 by absorption in a low-pressure graphite tube atomizer.

  4. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  5. Characterization of digital textile printing and polymer blend (PFO-DMP:P3HT) for application in manufacture of organic diodes emitting white light - WOLEDS

    Science.gov (United States)

    da Silva, Marco A. T.; Thomazini, Emanuelle F.; Albertini, Madson; Renzi, Wesley; Franchello, Flavio; Dias, Ivan F. L.; Duarte, José Leonil; Poças, Luiz C.; Lourenço, Sidney A.

    2016-12-01

    The research of materials and structures for the manufacture of organic diodes emitting white light WOLEDS has been very intense nowadays mainly due to the possibilities of its use in obtaining low-energy light consuming. The energy transfer between polymer materials has proven to be a great allied to search organic devices with emitting white light. Polymers such as PFO-DMP (donor) and P3HT (acceptor) are candidates for this application. In this work, P3HT, PFO-DMP and blends (PFO-DMP:P3HT (5%)) films were deposited by spin-coating on digital textile printing substrates. The optical properties of the digital textile printing, polymers and blend were studied by UV-VIS, steady-state photoluminescence (PL), PL quantum yield (PLQY) and Raman (all at 298 K) spectroscopy techniques. The digital textile printing were acquired from Isoliner, a Brazilian company specialized in this kind of textile. In the blend a strongly energy transfer from PFO-DMP to P3HT was observed. The PL spectrum of the PFO-DMP:P3HT (5%) covers the 430-730 nm range. From integrated PL spectra in the range of 13-643 K, it was obtained the temperature at which the phosphor loses 50% of its initial emission intensity, T1/2 = 430 K. Gaussian fits were performed, and the peaks were identified. Raman measurements were performed on substrates with and without polymers deposited and the results are in agreement with those found in the literature. Vibrational modes of textile increase the full width half maximum (FWHM), due to electron-phonons interaction. Results obtained through the coordinate calculation CIE from blend emission for various types of textile digital printing tested, showed the more appropriate combinations (substrate/blend) for emission in white.

  6. Studies on high power ultrasonic microembossing and organic light emitting diodes (OLEDs) for the creation of lab-on-CD devices for sensor related applications

    Science.gov (United States)

    Vengasandra, Srikanth G.

    This study demonstrates the application of High Power Ultrasonic Microembossing Technology (HPUMT) in producing microfeatures on polymer substrates. The work reviews a novel method of obtaining flash free and precise microfeatures by manipulating the material density through microcellular foaming. The microfeatures created on the polymer substrates were further characterized by analyzing the feature depth with respect to the critical ultrasonic embossing operating parameters such as embossing heating times (s), embossing amplitude (microm) at a constant embossing trigger force (N). An experiment design was constructed and performed to characterize the parameters on foamed and unfoamed (or regular) versions of polystyrene (PS) and polypropylene (PP) sample materials. Results indicated feature depth was proportional to heating times, amplitude and force. It was also seen the maximum depth was achieved in the shortest cycle times with higher amplitudes and forces of operation. HPUMT was further studied to create functional network of microchannels functioned as reservoirs, reaction chamber and burst or gate valves to form a centrifugal biosensing platform that is also referred to as a lab-on-CD or a bio-CD device. The surface energy of the polymer substrates was increased to enable fluid flow by using a surfactant based organic coating to facilitate hydrophilicity. Using an organic light emitting diode (OLEDs) as an electroluminescence source provided luminescence decay results in good agreement with stern-volmer relationship. The functionality of the OLED-coupled lab-on-CD device was further tested in measuring unknown concentrations of a particular analyte in corn slurry sample which contained numerous contaminants. Combinatorial multianalyte sensing was also made possible on a single bio-CD using a four photodetector (PD) quad preamp disk sensor.

  7. Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

    Science.gov (United States)

    Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

    2017-02-01

    Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

  8. Adolescents with Nonresident Fathers: Are Daughters more Disadvantaged than Sons?

    OpenAIRE

    Mitchell, Katherine Stamps; Booth, Alan; KING, VALARIE

    2009-01-01

    This study examined sons' and daughters' involvement with nonresident fathers and associated outcomes (N=4,663). Results indicate that sons and daughters report equal involvement with nonresident fathers on most measures of father investment, although sons report more overnight visits, sports, and movies, and feeling closer to their fathers compared to daughters. Sons and daughters generally benefit from nonresident father involvement in the same way in internalizing and externalizing problem...

  9. Application of Gaussian beam ray-equivalent model and back-propagation artificial neural network in laser diode fast axis collimator assembly.

    Science.gov (United States)

    Yu, Hao; Rossi, Giammarco; Braglia, Andrea; Perrone, Guido

    2016-08-10

    The paper presents the development of a tool based on a back-propagation artificial neural network to assist in the accurate positioning of the lenses used to collimate the beam from semiconductor laser diodes along the so-called fast axis. After training using a Gaussian beam ray-equivalent model, the network is capable of indicating the tilt, decenter, and defocus of such lenses from the measured field distribution, so the operator can determine the errors with respect to the actual lens position and optimize the diode assembly procedure. An experimental validation using a typical configuration exploited in multi-emitter diode module assembly and fast axis collimating lenses with different focal lengths and numerical apertures is reported.

  10. Adolescents with Nonresident Fathers: Are Daughters More Disadvantaged than Sons?

    Science.gov (United States)

    Mitchell, Katherine Stamps; Booth, Alan; King, Valarie

    2009-01-01

    This study examined sons' and daughters' involvement with nonresident fathers and associated outcomes (N = 4,663). Results indicated that sons and daughters reported equal involvement with nonresident fathers on most measures of father investment, although sons reported more overnight visits, sports, and movies and feeling closer to their fathers…

  11. Chemically Modulated Graphene Diodes

    OpenAIRE

    Kim, Hye-young; Lee, Kangho; McEvoy, Niall; Yim, Chanyoung; Duesberg, Georg S.

    2013-01-01

    PUBLISHED We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocom...

  12. A CW Gunn Diode Switching Element.

    Science.gov (United States)

    Hurtado, Marco; Rosenbaum, Fred J.

    As part of a study of the application of communication satellites to educational development, certain technical aspects of such a system were examined. A current controlled bistable switching element using a CW Gunn diode is reported on here. With modest circuits switching rates of the order of 10 MHz have been obtained. Switching is initiated by…

  13. Determining Extinction Ratio Of A Laser Diode

    Science.gov (United States)

    Unger, Glenn L.

    1992-01-01

    Improved technique to determine extinction ratio of pulsed laser diode based partly on definition of extinction ratio applicable to nonideal laser pulses. Heretofore, determinations involved assumption of ideal laser pulses, and neglected optical power from background light. Because power fluctuates during real pulse, more realistic to define extinction ratio in terms of energy obtained.

  14. Solar spectrum rectification using nano-antennas and tunneling diodes

    Science.gov (United States)

    Dagenais, Mario; Choi, Kwangsik; Yesilkoy, Filiz; Chryssis, Athanasios N.; Peckerar, Martin C.

    2010-02-01

    Our goal is to develop a rectifying antenna (rectenna) applicable to solar spectrum energy harvesting. In particular, we aim to demonstrate viable techniques for converting portion of the solar spectrum not efficiently converted to electric power by current photovoltaic approaches. Novel design guidelines are suggested for rectifying antenna coupled tunneling diodes. We propose a new geometric field enhancement scheme in antenna coupled tunneling diodes that uses surface plasmon resonances. For this purpose, we have successfully implemented a planar tunneling diode with polysilion/SiO2/polysilcon structure. An antenna coupled asymmetric tunneling diode is developed with a pointed triangle electrode for geometric field enhancement. The geometrically asymmetric tunneling diode shows a unique asymmetric tunneling current versus voltage characteristic. Through comparison with crossover tunneling diodes, we verified that the current asymmetry is not from the work function difference between the two electrodes. Results of RF rectification tests using the asymmetric diode demonstrate that our approach is practical for energy harvesting application. Furthermore, we describe how surface plasmons can enhance the electric field across the tunnel junction, lowering the effective "turn-on" voltage of the diode, further improving rectification efficiency.

  15. Phase-change radiative thermal diode

    CERN Document Server

    Ben-Abdallah, Philippe

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of futur contactless thermal circuits or in the conception of radiative coatings for thermal management.

  16. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

    Directory of Open Access Journals (Sweden)

    Abdul Manaf Hashim

    2011-08-01

    Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  17. Organic light-emitting diodes: High-throughput virtual screening

    Science.gov (United States)

    Hirata, Shuzo; Shizu, Katsuyuki

    2016-10-01

    Computer networks, trained with data from delayed-fluorescence materials that have been successfully used in organic light-emitting diodes, facilitate the high-speed prediction of good emitters for display and lighting applications.

  18. Drivers for High Power Laser Diodes

    Institute of Scientific and Technical Information of China (English)

    Yankov P; Todorov D; Saramov E

    2006-01-01

    During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack,and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd:YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.

  19. Optical communications. V - Light emitting diodes /LED/

    Science.gov (United States)

    Best, S. W.

    1980-10-01

    The process of assembling diode chips is discussed, along with their application in optical communications. Metal plating is performed with an evaporation technique using primarily AuGe on the back side and Al or AuZn on the front side. The assembling of LED-chips with metal casings is illustrated. The chip is mounted on a flat bottom plate and electrical contact is established by means of an alloying or adhesion procedure. A glass fiber can be attached to the diode and then fitted with a casing, or the diode can be assembled with a metal cap and a lense, or with an open cap that is sealed with a clear synthetic resin plastic. The typical emission spectra of an LED and a semiconductor laser are compared. Limitations in the operation of an LED in a photoconductor are examined, taking into account spectral line width and radiated power criteria.

  20. Poly (3,4-ethylenedioxythiophene) (PEDOT) and poly (3,4-ethylenedioxythiophene)-few walled carbon nanotube (PEDOT-FWCNT) nanocomposite based thin films for Schottky diode application

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Bhavana, E-mail: bgupta1206@gmail.com [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre of Atomic Research, Kalpakkam, Tamil Nadu 603102 (India); Mehta, Minisha, E-mail: mehta.mini@gmail.com [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre of Atomic Research, Kalpakkam, Tamil Nadu 603102 (India); Melvin, Ambrose [Catalysis Division, CSIR-National Chemical Laboratory, Dr. Homi Bhabha, Pune 411008 (India); Kamalakannan, R.; Dash, S.; Kamruddin, M.; Tyagi, A.K. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre of Atomic Research, Kalpakkam, Tamil Nadu 603102 (India)

    2014-10-15

    Transparent, conductive films of poly (3,4-ethylenedioxythiophene) (PEDOT) and poly (3,4-ethylenedioxythiophene)-few walled carbon nanotube (PEDOT-FWCNT) nanocomposite were synthesized by in-situ oxidative polymerization and investigated for their Schottky diode property. The prepared films were characterized by UV–Vis spectroscopy, thermal gravimetric analysis (TGA), surface resistivity, cyclic voltametery, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). SEM reveals the formation of homogeneous and adhesive polymer films while HRTEM confirms the uniform wrapping of polymer chains around the nanotube walls for PEDOT-FWCNT film. Improved thermal stability, conductivity and charge storage property of PEDOT in the presence of FWCNT is observed. Among different compositions, 5 wt. % of FWCNT is found to be optimum with sheet resistance and transmittance of 500 Ω sq{sup −1} and 77%, respectively. Moreover, the electronic and junction properties of polymer films were studied and compared by fabricating sandwich type devices with a configuration of Al/PEDOT or PEDOT-FWCNT nanocomposite/indium tin oxide (ITO) coated glass. The measured current density-voltage characteristics show typical rectifying behavior for both configurations. However, enhanced rectification ratio and higher forward current density is observed in case of PEDOT-FWCNT based Schottky diode. Furthermore, reliability test depicts smaller hysteresis effect and better performance of PEDOT-FWCNT based diodes. - Highlights: • Single step synthesis of PEDOT and PEDOT-FWCNT nanocomposites films via in-situ oxidative polymerization. • Thermal, electrical and electrochemical properties of films show positive effect of FWCNT on PEDOT films. • Schottky diodes based on metal Al/PEDOT or PEDOT-FWCNT composites/ITO glass are fabricated. • Improved electrical characteristics with better reliability is achieved for PEDOT-FWCNT based diodes.

  1. Hermetic diode laser transmitter module

    Science.gov (United States)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  2. Directed and diode percolation

    Science.gov (United States)

    Redner, S.

    1982-03-01

    We study the novel percolation phenomena that occur in random-lattice networks consisting of resistor-like and diode-like bonds. Resistor bonds connect or "transmit information" in either direction along their length, while diodes connect in one direction only. We first treat the special case of directed bond percolation, in which the diodes are aligned along a preferred axis. Mean-field theory shows that clusters become extremely anisotropic near the percolation transition and that their shapes are characterized by two correlation lengths, one parallel and one transverse to the preferred axis. These lengths diverge with exponents ν∥=1 and ν⊥=12, respectively, from which we can show that the upper critical dimension for this system must be five. We also treat a more general random network on the square lattice containing resistors and diodes of arbitrary orientation. Duality arguments are applied to obtain exact results for the location of phase transitions in this system. We then use a position-space renormalization-group approach to map out the phase diagram and calculate critical exponents. This system has an isotropic percolating phase, and phases which percolate in only one direction. Novel types of transitions occur between these phases, in which the diode orientation plays a fundamental role. These percolating phases meet with the nonpercolating phase along a line of multicritical points, where concentration and orientational fluctuations are simultaneously critical.

  3. Is the distant relationship of fathers and homosexual sons related to the sons' erotic preference for male partners, or to the sons' atypical gender identity, or to both?

    Science.gov (United States)

    Freund, K; Blanchard, R

    1983-01-01

    Study 1 compared the retrospectively reported father-son relationships of four groups of adult males: (a) Gynephiles (males who erotically prefer physically mature females), (b) androphiles (who prefer physically mature males), (c) a combined group of heterosexual pedophiles and pedohebephiles (the latter being attracted to pubescent as well as prepubescent females), and (d) a combined group of homosexual pedophiles and pedohebephiles (the latter attracted to pubescent as well as prepubescent males). The gynephiles were paid volunteers; the latter three groups were patients. The androphiles, the only group among those compared known to exhibit a measurably greater degree of cross gender identity in childhood, were also the only group to report significantly poorer father-son relations. The homosexual pedo/pedohebephiles, who also prefer male partners but who exhibit typical male gender identity in childhood, did not differ in father-son relations from the gynephiles or the heterosexual pedo/pedohebephiles. Study 2 showed that, within a sample of nonpatient volunteer androphiles, those individuals who reported the greatest degree of cross gender behavior in childhood also tended to report the worst relationships with their fathers. This correlation was replicated within a sample of androphilic patients in Study 3. The consistent pattern of results obtained from these three studies suggests that the emotionally distant relationships of fathers and androphilic sons relate to the sons' atypical childhood gender identity (or observable gender role behavior) rather than to the sons' erotic preference for male partners per se.

  4. Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Mostefa Benhaliliba

    2015-06-01

    Full Text Available The effect of indium on the characteristics of Ag / SnO2 : In / Si / Au Schottky diode (SD is studied. The electronic parameters, ideal factor, the effective barrier, flat band barrier height, the series resistance, the saturation current density of the diodes were extracted from the current voltage (I-V and capacitance voltage (C-V characteristics. The series resistance (Rs determined by Cheung method increases (508-534 Ω with In doping level while the barrier height still constant around 0.57 V. Norde approximation gives a similar barrier height values of 0.69 V but the series resistance reaches higher values of 5500 Ω.

  5. Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements.Application to n-InP

    Institute of Scientific and Technical Information of China (English)

    Ali Ahaitouf; Abdelaziz Ahaitouf; Jean Paul Salvestrini; Hussein Srour

    2011-01-01

    Based on current voltage (I-Vg) and capacitance voltage (C-Vg) measurements,a reliable procedure is proposed to determine the effective surface potential Vd (Vg) in Schottky diodes.In the framework of thermionic emission,our analysis includes both the effect of the series resistance and the ideality factor,even voltage dependent.This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-Vg measurements.The study clearly shows that the depletion width and the flat band barrier height deduced from C-Vg,which are important parameters directly related to the surface potential in the semiconductor,should be estimated within our approach to obtain more reliable information.

  6. Son Preference in Pakistan; A Myth or Reality.

    Science.gov (United States)

    Atif, Khaula; Ullah, Muhammad Zia; Afsheen, Afeera; Naqvi, Syed Abid Hassan; Raja, Zulqarnain Ashraf; Niazi, Saleem Asif

    2016-01-01

    To analyze desire for sons/daughters among ladies of Peshawar, Pakistan, with a view to rule out son preference and to study impact of various demographic characteristics on the subject. Cross-sectional descriptive study conducted at Combined Military Hospital, Peshawar, from August 2015 - January 2016; sampling technique was random/probability/non-purposive. Self-designed questionnaire was utilized; carrying questions pertinent to desire for sons/daughters during marital life, and demographic details. Data analyzed via descriptive analysis (SPSS-21), expressed as frequencies/percentages and mean ± standard deviation(minimum/maximum). Sons and daughters desired (dependent variables) were cross-tabulated with independent variables. Response rate was 63.25% (n-506). Data revealed following: Sons desired 3.05±2.061(1/12); Daughters desired 1.15±0.767(0/4); 6.1%(n-31) and 0.6%(n-3) desired infinite number of sons and daughters respectively, 18.2%(n-92) did not desire to have even one daughter, while 2.2%(n-11) considered it immaterial to have daughters or sons. There was a significant relation between sons desired and client's education (p<0.001), husband's education (p<0.001) and socioeconomic class (p<0.001). There was no significant impact of religion (p-0.142) on desire for sons. Impact of independent variables on daughters desired was similar but less pronounced. There was candid son preference among the respondents. Gender discrimination can be attenuated by adequately addressing son preference at all tiers.

  7. A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Turgut, G. [Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, 25240 (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey); Sonmez, E. [Department of Physics, Faculty of K.K. Education, Ataturk University, Erzurum, 25240 (Turkey); Ozcelik, F.S. [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey)

    2016-04-15

    Highlights: • Eu incorporated ZnO thin films were grown by sol–gel spin coating. • The influence of Eu contribution on features of ZnO was investigated. • Al/ZnO:Eu/p-Si heterojunction diodes were also fabricated. • The diode parameters were calculated from I–V measurements. - Abstract: In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 × 10{sup −3} and 2.43 nm to the values of 35.56 nm, 1.98 × 10{sup −3} and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3.328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I–V) measurements at the room temperature.

  8. Patrilineal Ability: Nurturing Giftedness in Grandfathers, Fathers, and Sons

    Science.gov (United States)

    Smith, Fiona

    2015-01-01

    The identification of his son's high ability can cause a father to confront his own experiences as a gifted child and adult and change his emotional life, family dynamics, and career. Over the past decade, Fiona Smith has worked closely with numerous multi-generations of grandfathers, fathers, and sons in Australia to analyze their backgrounds,…

  9. Like Godfather, Like Son: Exploring the Intergenerational Nature of Crime

    Science.gov (United States)

    Hjalmarsson, Randi; Lindquist, Matthew J.

    2012-01-01

    Sons (daughters) with criminal fathers have 2.06 (2.66) times higher odds of having a criminal conviction than those with noncriminal fathers. One additional paternal sentence increases sons' (daughters') convictions by 32 (53) percent. Compared to traditional labor market measures, the intergenerational transmission of crime is lower than that…

  10. A Letter from a Black Mom to Her Son

    Science.gov (United States)

    Watson, Dyan

    2012-01-01

    An African American mother and teacher educator uses examples from her own childhood to describe how she hopes her child will be treated by teachers, and what she fears. In her letter to her son, the African American mom expresses how she want teachers to know her son's journey to school--metaphorically and physically. She wants them to know that…

  11. Son preference in rural China: patrilineal families and socioeconomic change.

    Science.gov (United States)

    Murphy, Rachel; Tao, Ran; Lu, Xi

    2011-01-01

    This article draws on a survey conducted in six provinces in summer 2008 to investigate the determinants of son preference in rural China. The analysis confirms the conventional wisdom that son preference is embedded within patrilineal family structures and practices. We extend our analysis by exploring specific aspects of variation within patrilineal family culture. We find that the patrilineal group (clan) composition of villages and family participation in practices such as building ancestral halls and updating genealogies significantly influence son preference. Yet even though son preference is embedded within patrilineal family culture, our analysis suggests that over time the attenuation of son preference is likely. This is because determinants associated with socioeconomic change—for instance, higher levels of education, direct exposure to official policy education materials, higher income (a proxy for rural industrialization), and agricultural mechanization—all attenuate son preference. Being younger and female are also associated with weaker son preference, and both characteristics are likely to interact with education and industrialization to further dilute son preference in the longer term. Nevertheless, our findings suggest that concerted efforts are needed to ameliorate institutional discrimination against rural people in welfare provisioning and in labor markets, and to promote multiple dimensions of gender equality, including in land rights, wage rates, and education.

  12. Frequency Comb Assisted Broadband Precision Spectroscopy with Cascaded Diode Lasers

    CERN Document Server

    Liu, Junqiu; Pfeiffer, Martin H P; Kordts, Arne; Kamel, Ayman N; Guo, Hairun; Geiselmann, Michael; Kippenberg, Tobias J

    2016-01-01

    Frequency comb assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this letter we present a novel method using cascaded frequency agile diode lasers, which allows extending the measurement bandwidth to 37.4 THz (1355 to 1630 nm) at MHz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy and in particular it enables to characterize the dispersion of integrated microresonators up to the fourth order.

  13. Study on the application of semiconductor light emitting diode and its lighting%探讨半导体发光二极管及其照明的应用

    Institute of Scientific and Technical Information of China (English)

    汪磊

    2016-01-01

    At present,with the rapid development of China's socialist market economy,people's living standards and quality of life continues to improve,so the cause of lighting proposed higher requirements, the semiconductor light-emitting diode has excellent performance in energy conservation and environmental protection,use for a long time,with good efficiency,therefore has been widely used in indoor and outdoor lighting.In this paper,through the analysis of light emitting diode principle,to discuss the application of the lighting.%现阶段,随着我国社会主义市场经济飞速发展,人们生活水平和生活质量不断提高,因此对照明事业提出了更高的要求,半导体发光二极管具备了良好的节能、环保性能,使用时间较长,具有良好的高效性,因此而被大量使用于室内外的照明当中,本文通过对发光二极管原理进行分析,探讨其照明的应用。

  14. Avalanche robustness of SiC Schottky diode

    OpenAIRE

    Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

    2016-01-01

    International audience; Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in the device can increase quickly and will not be uniformly distributed across t...

  15. Resolution of pathological identification between mother and son following rhinoplasty.

    Science.gov (United States)

    Hussain, M F; Gomersall, J D

    1976-10-01

    The case here described shows that severe psychological disturbance can be caused by identification between mother and son, resulting in preoccupation with a part of the body, which in the opinion of those outside the relationship, shows no gross abnormality. Similar delusional beliefs to those held by the mother were induced in the son, when he reached the age at which these beliefs occurred in the mother, in whom they were incompletely resolved. Plastic surgery, in the absence of gross deformity, brought relief of the distress caused by this type of psychopathology. Relief occurred in the conflicts of both mother and son, even though operation was on the latter, only.

  16. Causal Attributions and Parents' Acceptance of Their Homosexual Sons.

    Science.gov (United States)

    Belsky, Yael; Diamond, Gary M

    2015-01-01

    This Internet-based study examined the association between Israeli parents' attributions regarding the cause of their son's homosexuality and their level of acceptance of their homosexual son. The sample (N = 57) was recruited via Internet Web sites (gay forums and support groups). Findings suggest that more essentialist (versus constructivist) causal attributions were associated with higher levels of parental acceptance. Length of time parents knew of their son's homosexual orientation predicted the degree to which their attributions were essentialist. Implications are discussed.

  17. Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

    Science.gov (United States)

    Singh, S. D.; Nand, Mangla; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Sinha, A. K.; Jha, S. N.; Ganguli, Tapas

    2016-12-01

    Valence band offset of 2.3 ± 0.4 eV at strained NiO/MgO heterojunction is determined from photoelectron spectroscopy (PES) measurements. The determined value of valence band offset is larger than that is predicted from first principle calculations, but is in corroboration with that obtained from band transitivity rule. Our PES result indicates a larger value of the valence band offset at strained NiO/MgO heterojunction and can be used to predict accurately carrier transport and electroluminescence mechanisms for n-ZnO/MgO/p-NiO and p-NiO/MgO/n-GaN heterojunction light emitting diodes.

  18. Application of spherical diodes to size dose in means of photons of megavoltage; Aplicacion de diodos esfericos a la medida de dosis en hace de fotones de megavoltaje

    Energy Technology Data Exchange (ETDEWEB)

    Barbes, B.; Azcona, J. D.; Burguete, J.; Marti-Climent, J. M.

    2013-07-01

    We studied the ability of a spherical diode commercial, designed originally as a photovoltaic cell, to measure doses of beams of photons of nominal energies from 6 to 15 MV from a linear accelerator of therapeutic use. Previously it had proven its capacity for energy used in brachytherapy (20-30 keV) measures. We studied their angular response degradation with previous irradiance and its reliability for measures of factors of countryside on apertures from 2x2cm until 16x16cm. We check your over-response to scattered photons of low energy, produced in large fields, and the possibility of correcting this effect with a shield. (Author)

  19. Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Ho-Jun Lee

    2015-01-01

    Full Text Available Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical properties. To realize high light emission power and stable current operation, high-quality epitaxy and elaborate chip processing were performed. The fabricated flexible LEDs showed over threefold optical output power compared to normal LEDs on Si and had comparable forward voltage and series resistances.

  20. The angular dependence of a 2-dimensional diode array and the feasibility of its application in verifying the composite dose distribution of intensity-modulated radiation therapy.

    Science.gov (United States)

    Li, Qi-Lin; Deng, Xiao-Wu; Chen, Li-Xin; Huang, Xiao-Yan; Huang, Shao-Min

    2010-06-01

    The planning dose distribution of intensity-modulated radiation therapy (IMRT) has to be verified before clinical implementation. The commonly used verification method is to measure the beam fluency at 0 degree gantry angle with a 2-dimensional (2D) detector array, but not the composite dose distribution of the real delivery in the planned gantry angles. This study was to investigate the angular dependence of a 2D diode array (2D array) and the feasibility of using it to verify the composite dose distribution of IMRT. Angular response of the central detector in the 2D array was measured for 6 MV X-ray, 10 cmx10 cm field and 100 cm source axis distance (SAD) in different depths. With the beam incidence angle of 0-60 degrees, at intervals of 10 degrees, and inherent buildup of the 2D array (2 g/cm2), the array was irradiated and the readings of the central diode were compared with the measurement of thimble ionization chamber. Using a combined 30 cmx30 cmx30 cm phantom which consisted of solid water slabs on top and underlying the 2D array, with the diode detectors placed at 8 g/cm2 depth, measurements were taken for beam angles of 0 degrees-180 degrees at intervals of 10 degrees and compared with the calculation of treatment planning system (TPS) that pre-verified with ion chamber measuring. Differences between the array detector and thimble chamber measurements were greater than 1% and 3.5% when the beam angle was larger than 30 degrees and 60 degrees, respectively. The measurements in the combined phantom were different from the calculation as high as 20% for 90 degrees beam angle, 2% at 90 degrees+/-5 degrees and less than 1% for all the other beam angles. The 2D diode array is capable of being used in composite dose verification of IMRT when the beam angles of 90 degrees+/-5 degrees and 270 degrees+/-5 degrees are avoided.

  1. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  2. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heatin

  3. Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2010-01-01

    High power diode lasers are used in a large number of applications. A limiting factor for more widespread use of broad area lasers is the poor beam quality. Gain guided tapered diode lasers are ideal candidates for industrial applications that demands watt level output power with good beam quality...

  4. The Telephone Connection: An Interview with Ernest Hemingway's Son.

    Science.gov (United States)

    Workman, Brooke

    1979-01-01

    Relates how a conference call to Ernest Hemingway's son, Gregory, resolved questions and brought understanding and excitement to a group of Iowa high school students enrolled in a 12-week Hemingway seminar. (FL)

  5. Cryptorchidism and hypospadias in sons of gardeners and farmers

    DEFF Research Database (Denmark)

    Weidner, I S; Møller, H; Jensen, Tina Kold

    1998-01-01

    Cryptorchidism and hypospadias have been related to prenatal estrogen exposure in animal models. Some chemicals used in farming and gardening have been shown to possess estrogenic and other hormone-disrupting effects. Earlier studies have indicated increased risks of urogenital malformations...... in the sons of pesticide appliers. In the present study, parental occupation in the farming and gardening industry among 6,177 cases of cryptorchidism, 1,345 cases of hypospadias, and 23,273 controls, born live from 1983 to 1992 in Denmark, was investigated in a register-based case-control study....... A significantly increased risk of cryptorchidism but not hypospadias was found in sons of women working in gardening (adjusted odds ratio = 1.67; 95% confidence interval, 1.14-2.47). The risks were not increased in sons of men working in farming or gardening. The increased risk of cryptorchidism among sons...

  6. Mother-son incest as a defence against psychosis.

    Science.gov (United States)

    Bachmann, K M; Bossi, J

    1993-09-01

    In the following, a case of mother-adult son incest is described and explained from a psychoanalytical viewpoint. Two theories are put forward: (a) Mother-son incest may occur as a defence against psychosis, and (b) the incest represents an unconscious search for triangulation, a process in which external authorities (such as, for example, a court of law) may function as surrogates for persons who have been missed in the pre-oedipal past. It is therefore possible to understand mother-son incest symbolically as an indicator of pre-oedipal needs of the son and of the mother's longing for the absent partner. The incest is, however, not only a cry for help; it is also to be regarded as an attempt to solve the problem for both people involved. Looked at in this way, new ways of understanding and new possibilities for therapy emerge.

  7. "Diode Pumped Solid State Lasers At 2 And 3 µm"

    Science.gov (United States)

    Esterowitz, Leon

    1988-06-01

    The most attractive alternative to flashlamp pumping of solid state lasers is the diode laser. In the past two decades numerous laboratory devices have been assembled which incorporated single diode lasers, small laser diode arrays or LED's for pumping of Nd:YAG, Nd:glass and a host of other Nd lasers. The low power output, low packaging density, and extremely high cost of diode lasers prevented any serious applications for laser pumping in the past. The reason for the continued interest in this area stems from the potential dramatic increase in system efficiency and component lifetime, and reduction of thermal load of the solid-state laser material. The latter not only will reduce thereto-optic effects and therefore lead to better beam quality but also will enable an increase in pulse repetition frequency. The attractive operating parameters combined with low voltage operation and the compactness of an all solid-state laser system have a potential high payoff. The high pumping efficiency compared to flashlamps stems from the good spectral match between the laser diode emission and the rare earth activator absorption bands. A significant advantage of laser diode pumping compared to arc lamps is system lifetime and reliability. Laser diode arrays have exhibited lifetimes on the order of 10,000 hours in cw operation and 109 shots in the pulsed mode. Flashlamp life is on the order of 107 shots, and about 200 hours for cw operation. In addition, the high pump flux combined with a substantial UV content in lamp pumped systems causes material degradation in the pump cavity and in the coolant. Such problems are virtually eliminated with laser diode pump sources. The absence of high voltage pulses, high temperatures and UV radiation encountered with arc lamps leads to much more benign operating features for solid state laser systems employing laser diode pumps. Laser diode technology dates back to 1962 when laser action in GaAs diodes was first demonstrated. However, it

  8. An Analysis of the Equivalent Resistance of PIN Diodes at Microwave Frequencies

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-yu; SONG Kai-jun; MAO Rui-jie; LU Shi-qiang

    2004-01-01

    The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of a PIN diode decreases as the frequency increases. In this paper, the affection of skin effect to forward bias equivalent resistance is considered and an analytic expression of the equivalent resistance of the region I is presented. In result, the forward bias resistance ora PIN diode at microwave frequencies is much higher than that at DC and low frequencies. It is necessary, therefore,to consider the skin effect of PIN diodes in high frequency applications.

  9. Remarks on Psychological Analyses of Sons and Lovers

    Institute of Scientific and Technical Information of China (English)

    杨艳微

    2007-01-01

    Sons and Lovers is considered to be D.H.Lawrene's first masterpiece. Social critique and psychological exploration are two props of creative works of D.H.Lawrence. There are two points of view in literature world about the novel Sons and Lovers: One is its critical function which criticizes the destroy of capitalistic industrial civilization to human body and mind. The other is psychological analyses. The tragedy of the characters attributes to the Oedipus complex.

  10. The discovery and exploration of Hang Son Doong

    Energy Technology Data Exchange (ETDEWEB)

    Limbert, H.; Limbert, D.; Hieu, N.; Phai, V. V.; Kinh Bac, D.; Phuong, T. H.; Granger, D.

    2016-08-01

    Hang Son Doong is located in the Phong Nha Ke Bang Limestone Massif in Quang Binh Province, Central Vietnam. Cave exploration by British cavers has been continuous in this area since 1990. Hang Son Doong is part of the Phong Nha Cave system which runs from the southern end of the National Park near the Lao border to the final resurgence at Phong Nha Cave. (Author)

  11. SysSon: A Sonification Platform for Climate Data

    Science.gov (United States)

    Visda, Goudarzi; Hanns Holger, Rutz; Katharina, Vogt

    2014-05-01

    Climate data provide a challenging working basis for sonification. Both model data and measured data are assessed in collaboration with the Wegener Center for Climate and Global Change. The multi dimensionality and multi variety of climate data has a great potential for auditory displays. Furthermore, there is consensus on global climate change and the necessity of intensified climate research today in the scientific community and general public. Sonification provides a new means to communicate scientific results and inform a wider audience. SysSon is a user centered auditory platform for climate scientists to analyze data. It gives scientists broader insights by extracting hidden patterns and features from data that is not possible using a single modal visual interface. A variety of soundscapes to chose from lessens the fatigue that comes with repeated and sustained listening to long streams of data. Initial needs assessments and user tests made the work procedures and the terminology of climate scientists clear and informed the architecture of our system. Furthermore, experiments evaluated the sound design which led to a more advanced soundscape and improvement of the auditory display. We present a novel interactive sonification tool which combines a workspace for the scientists with a development environment for sonification models. The tool runs on different operating systems and is released as open source. In the standalone desktop application, multiple data sources can be imported, navigated and manipulated either via text or a graphical interface, including traditional plotting facilities. Sound models are built from unit generator graphs which are enhanced with matrix manipulation functions. They allow us to systematically experiment with elements known from the visual domain, such as range selections, scaling, thresholding, markers and labels. The models are organized in an extensible library, from which the user can choose and parametrize. Importance is

  12. Hyperchaos via X-Diode

    DEFF Research Database (Denmark)

    Lindberg, Erik; Tamasevicius, A.; Cenys, A.

    1998-01-01

    A Chaos diode (X-diode) with a hysteric current-voltage characteristic has been used to generate hyperchaotic oscillations characterized with multiple positive Lyapunov exponents. The hyperchaotic oscillators comprise a X-diode in parallel with an M'th order LC loop (M.GE.4). Numerical simulations...... and hardware experiments have beeen performed. An appropriate mathematical model is provided and is used to calculate the Lyapunov exponents. Synchronization properties have been investigated....

  13. Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Lung-Chien Chen

    2012-01-01

    Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

  14. Luminescence properties of blue La1-xCexAl(Si6-zAlz)(N10-zOz) (z˜1) oxynitride phosphors and their application in white light-emitting diode

    Science.gov (United States)

    Takahashi, Kohsei; Hirosaki, Naoto; Xie, Rong-Jun; Harada, Masamichi; Yoshimura, Ken-ichi; Tomomura, Yoshitaka

    2007-08-01

    This letter reports blue oxynitride phosphors of La1-xCexAl(Si6-zAlz)(N10-zOz) (z˜1) (termed JEM crystal phase) and their application for the white light-emitting diodes (LEDs). The JEM phosphor can be excited by 405nm light efficiently, and its spectrum can be tuned widely by changing the Ce concentration. The emission spectrum of this phosphor is as wide as 110nm in full width at half maximum, which is convenient to solid state lighting. The preparation of white LED was attempted by using a 405nm InGaN chip and oxynitride phosphors in this work. High color rendering index >95 was achieved in white LED with various correlated color temperatures, indicating the suitability of the JEM phosphor in solid-state lightings.

  15. Fabrication and transfer assembly of microscale, solid-state light emitting diodes and solar cells for transparent and flexible electronics applications

    Science.gov (United States)

    Brueckner, Eric P.

    Efficiency metrics for some solid-state electronic materials systems have progressed to the point where theoretical limits are being approached. Gallium nitride-based lightemitting diodes and silicon solar cells, for example, have achieved such extraordinarily high performance metrics that only incremental improvements upon them are expected in the next decade of intense research. This pseudo-plateau in performance development means concentrated effort can now be placed on strategic implementation of these materials into platforms that fill a growing demand for high-performance consumer products. Such products have traditionally relied upon large-scale materials, but possibilities now exist for manipulating micro-scale, wafer-based devices in ways that promote improvements in areas of electrical current spreading, light absorption and extraction, and thermal management. To this end, my research has focused on routes to fabricating and assembling solid-state light-emitting diodes and solar cells of indium gallium nitride and single-crystalline silicon, respectively, in configurations which optimize characteristics of their performance. Specifically, I have worked, in collaboration with others, to achieve a processing strategy that creates dense arrays of indium gallium nitride light-emitting diodes on a silicon wafer of (111) orientation and assemble them onto transparent and flexible substrates. This work produced novel form factors for solid-state lighting where small, light-emitting devices were spatially distributed and integrated with color-converting phosphors in ways that controllably tuned their chromaticity. We also demonstrated that incredible passive heat dissipation with these micro-scale elements stemming naturally from their small size and integration with metal films serving dually as an electrically interconnecting medium. The cell design and etching strategies used were then transferred to a single-crystalline silicon system where small, ribbon

  16. Active Stabilization of a Diode Laser Injection Lock

    CERN Document Server

    Saxberg, Brendan; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  17. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  18. Active stabilization of a diode laser injection lock

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  19. The Adjunctive Soft-Tissue Diode Laser in Orthodontics.

    Science.gov (United States)

    Borzabadi-Farahani, Ali

    2017-04-01

    Lasers are a relatively new addition to the orthodontist's armamentarium. This article reviews the fundamental basic science of available soft-tissue lasers, with an emphasis on diode lasers, and discusses various adjunct applications of the diode laser for soft-tissue orthodontic procedures. Diode lasers function by cutting with an initiated hot tip and produce minimal to no interaction with healthy dental hard tissue, making them suitable for soft-tissue procedures. The contact cutting mode provides enhanced bloodless site visibility and facility to perform delicate soft tissue procedures, which is important in areas with difficult access. Such adjunctive uses include laser gingivectomy to improve oral hygiene or bracket positioning, esthetic laser gingival recontouring, and laser exposure of superficially impacted teeth. Selected cases treated with a 940-nm indium-gallium-arsenide-phosphide (InGaAsP) diode laser will be presented.

  20. Active graphene–silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  1. Qualification of diode foil materials for excimer lasers

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, R.G.; Shurter, R.P.; Rose, E.A.

    1989-01-01

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor. 6 refs., 6 figs., 1 tab.

  2. Qualification of diode foil materials for excimer lasers

    Science.gov (United States)

    Anderson, R. G.; Shurter, R. P.; Rose, E. A.

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor.

  3. Active graphene-silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  4. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations

    Science.gov (United States)

    Tanikawa, Tomoyuki; Shojiki, Kanako; Katayama, Ryuji; Kuboya, Shigeyuki; Matsuoka, Takashi; Honda, Yoshio; Amano, Hiroshi

    2017-08-01

    The internal electric fields in III-polar (0001), N-polar (000\\bar{1}), and semipolar (10\\bar{1}1) InGaN/GaN light-emitting diodes were investigated by electroreflectance (ER) spectroscopy. The ER spectra reflected the difference in the direction and strength of internal electric fields. Phase analyses of the ER signal revealed that only III-polar InGaN wells have the opposite direction of the internal electric field at zero bias voltage; this finding is in good agreement with the results of numerical analyses. Quantitative analyses of internal electric fields were conducted by the linewidth analyses of ER spectra. Our experimental results indicate that the absolute value of internal electric fields can be measured from ER spectra.

  5. Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

    Institute of Scientific and Technical Information of China (English)

    Wang Jian; Zhang Wen-Dong; Xue Chen-Yang; Xiong Ji-Jun; Liu Jun; Xie Bin

    2007-01-01

    This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGal-xAs/GaAs resonant tunnelling diodes (RTDs) as a function of uniaxial external stress applied parallel to the [110] and the [110] orientations,and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110]stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [110] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [110] stresses and the linear sensitivities are up to 0.69 mV/MPa,-0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.

  6. Design, fabrication and characterization of In 0.23Ga 0.77As-channel planar Gunn diodes for millimeter wave applications

    Science.gov (United States)

    Li, Chong; Khalid, Ata; Paluchowski Caldwell, Sonia H.; Holland, Martin C.; Dunn, Geoff M.; Thayne, Iain G.; Cumming, David R. S.

    2011-10-01

    We present detailed design, fabrication and characterization of In 0.23Ga 0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 μm) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies.

  7. The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

    Directory of Open Access Journals (Sweden)

    A. Tombak

    2015-01-01

    Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

  8. THE MOTIF OF THE PRODIGAL SON IN IVAN TURGENEV'S NOVELS

    Directory of Open Access Journals (Sweden)

    Valentina Ivanovna Gabdullina

    2013-11-01

    Full Text Available The author questions the perception of Ivan Turgenev as a “non- Christian writer” and studies the problem of the prodigal son motif functioning in a series of his novels. In his novels, Turgenev pictured different phases of the archetypal story, originating from the Gospel parable of the prodigal son. In the novel Rudin he depicted the phase of spiritual wanderings of the hero who had lost touch with his native land — Russia. In his next novels (Home of the Gentry, Fathers and Sons and Smoke, after leading his hero in circles and sending him back to his paternal home, Turgenev reconstructs the model of human behavior, represented in the parable, thereby recognizing the immutability of the idea formalized in the Gospel. The motif of the return to Russian land gets its completion in Turgenev's last novel Virgin Soil, in which the author paradoxically connects the Westernist idea with the Gospel imperative. Solomin, the son of a deacon, sent by his wise father out to Europe “to get education”, studies in England, masters the European knowledge and returns back “to his native land” to establish his own business in inland Russia. Thus, a series of Turgenev's novels, in which he portrayed different phases of social life, are interlinked with the motif of the prodigal son, who is represented by novels' main characters.

  9. 50 Things My Son Doesn’t Need Me For

    Directory of Open Access Journals (Sweden)

    Tracey Kershaw

    2016-12-01

    Full Text Available ‘50 things my son doesn’t need me for’ (2011 explores the changing relationship between the artist and her son, and speaks about issues of loss. The artist’s interest is with the details and familiarity of everyday events. She focuses on unremarkable maternal experiences of daily life that relate to a particular time but which articulate both the extraordinary and the momentous, and represent the more fundamental changes that will inevitably occur as her son grows older. In the video, the artist is seen writing on a blackboard, and then erasing, 50 things that her son no longer needs her for. The video draws on the temporary nature of the items on the list; how quickly those things disappear. The artist focuses on the notion of loss as experienced from the mother’s perspective. The work explores feelings of maternal ambivalence, trapped in monotony, and the inherent contradictions with positive memories of closeness with her son.

  10. Photoluminescence properties and energy transfer in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8) phosphors for potential application in ultraviolet white light-emitting diodes.

    Science.gov (United States)

    Yu, Hong; Zi, Wenwen; Lan, Shi; Gan, Shucai; Zou, Haifeng; Xu, Xuechun; Hong, Guangyan

    2013-01-01

    Sr(3) MgSi(2) O(8) :Ce(3+) , Dy(3+) phosphors were prepared by a solid-state reaction technique and the photoluminescence properties were investigated. The emission spectra show not only a band due to Ce(3+) ions (403 nm) but also as a band due to Dy(3+) ions (480, 575 nm) (UV light excitation). The photoluminescence properties reveal that effective energy transfer occurs in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8)phosphors, and the co-doping of Ce(3+) could enhance the emission intensity of Dy(3+) to a certain extent by transferring its energy to Dy(3+) . The Ce(3+) /Dy(3+) energy transfer was investigated by emission/excitation spectra, and photoluminescence decay behaviors. In Sr2.94 MgSi2 O8 :0.01Ce(3+) , 0.05Dy(3+) phosphors, the fluorescence lifetime of Dy(3+) (from 3.35 to 27.59 ns) is increased whereas that of Ce(3+) is greatly decreased (from 43.59 to 13.55 ns), and this provides indirect evidence of the Ce(3+) to Dy(3+) energy transfer. The varied emitted color of Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) phosphors from blue to white were achieved by altering the concentration ratio of Ce(3+) and Dy(3+) . These results indicate Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) may be as a candidate phosphor for white light-emitting diodes. Copyright © 2012 John Wiley & Sons, Ltd.

  11. Son Preference in India: Shedding Light on the North-South Gradient

    Directory of Open Access Journals (Sweden)

    Daniela Klaus

    2014-12-01

    Full Text Available Dieser Beitrag liegt nur in englischer Sprache vor. Son preference is widespread in India and deep-rooted in its history. It is a matter of concern because it produces an imbalanced juvenile sex ratio. There are far fewer girls than boys. The figures vary greatly among the Indian states suggesting a major north-south gradient in son preference accompanied by a minor west-east gradient. The aim of this paper is to explain the regional pattern. We provide an application of the value of children-approach according to which the decision to have children is made on the calculus of benefits and costs related to children. In the light of the socioeconomic and sociocultural background in India, we propose that (potential parents’ expectations of benefits and costs are biased in favour of sons. This is suggested, therefore, as the key motivation for the preference for male offspring. However, region-specifics in the level of affluence, the educational level, the mode of production, the meaning and importance of religion, and the kinship regime are assumed to produce stronger son preference in north India compared to south India. This mediation-model is tested using the Indian sub-sample of the international Value of Children-study. Data were collected in Uttar Pradesh (north-central India and Puducherry (south-east India. Mothers aged 16 to 65 were interviewed in 2002 and 2010. Based on 1,173 respondents, a structural equation model was carried out to test the hypothesised composition effects related to the region and the mediating position of sex-specific benefits and costs. Initial findings confirm that the national son preference pattern is more likely to be found among north Indian mothers than south Indian mothers. As assumed, the sex-specific balance of benefits and costs contributes to the explanation of son preference. However, there is little evidence that the benefits and costs mediate between the region-specific socioeconomic and

  12. Violating Bell's inequality beyond Cirel'son's bound

    CERN Document Server

    Cabello, A

    2002-01-01

    Cirel'son inequality states that the absolute value of the combination of quantum correlations appearing in the Clauser-Horne-Shimony-Holt (CHSH) inequality is bound by $2 \\sqrt 2$. It is shown that the correlations of two qubits belonging to a three-qubit system can violate the CHSH inequality beyond $2 \\sqrt 2$. Such a violation is not in conflict with Cirel'son's inequality because it requires a choice of pairs of qubits which is only meaningful in a local-realistic theory. The maximum allowed violation of the CHSH inequality, 4, can be achieved using the Greenberger-Horne-Zeilinger state.

  13. Comparison of SHG Power Modulation by Wavelength Detuning of DFB- and DBR-Tapered Laser Diodes

    DEFF Research Database (Denmark)

    Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

    2016-01-01

    Pulsed visible lasers are used for a number of applications such as laser displays and medical treatments. Generating this visible light by direct frequency doubling of high power diode lasers opens new possibilities on how the power modulation can be performed. We present an investigation...... of the response of the second harmonic light to perturbations of the infrared laser diode and compare how the response differs for DFB- and DBR-Tapered laser diodes. We show that the visible light can be modulated from CW to kHz with modulation depths above 90% by wavelength detuning the laser diode....

  14. A Survey on Small Size Diodes For Microwave And Millimeter Wave Frequency Region

    Directory of Open Access Journals (Sweden)

    Rahul Ranjan, Prashant Kumar, Neha Singh

    2014-06-01

    Full Text Available This paper attempts to present a collection of microwave and millimetre wave semiconductor diodes. These semiconductor diodes are operates at microwave frequencies and millimetre frequencies. The invention of these semiconductor diodes led to almost complete replacement of vacuum devices which are bulky and large in size. Because of small size a large number of diodes can integrate on a single chip and this arrangement forms very large-scale integrated circuits which led to solid-state replacement on computer switching circuits. This paper surveys characteristics, applications, advantages and disadvantages of microwave and millimetre wave semiconductor devices.

  15. ¿Son los obreros idiotas e irracionales?

    Directory of Open Access Journals (Sweden)

    Francisco José León

    2010-01-01

    Full Text Available En este artículo presentamos un análisis crítico de la aproximación posmoderna y posestructuralista a la cuestión de la subjetividad obrera. El examen evidencia que: a algunas de sus proposiciones explicativas son internamente contradictorias o lógicamente inconsistentes; b en otras ocasiones la contradicción se produce entre las distintas proposiciones que la teoría ofrece para explicar un mismo fenómeno; c son frecuentes las contradicciones entre las proposiciones explicativas y los principios teóricos de los que se derivan; d es común la falta de inteligibilidad de las proposiciones; e abundan los "agujeros negros" en las cadenas de acontecimientos que se presentan como previos a la producción del efecto que pretenden explicar, y f muchas de sus proposiciones o bien no son plausibles empíricamente o simplemente no son empíricamente testables. Atribuimos a estas deficiencias la responsabilidad del fracaso de los autores posmodernos en su intento por recuperar la agencia obrera en los estudios del proceso de trabajo.

  16. Observations of a Father: My Son Has Spina Bifida.

    Science.gov (United States)

    Remmel, Carl L.

    1982-01-01

    The author reviews his experiences as the father of a child with spina bifida, a congenital problem in which the spine is not completely enclosed. He recounts his feelings upon first finding out about the condition and his son's subsequent surgeries and crises. (CL)

  17. Origins, Form, and Development of the Son Jarocho: Veracruz, Mexico.

    Science.gov (United States)

    Loza, Steven J.

    1982-01-01

    Son Jarocho (specifically from Veracruz) is a song-and-dance form originating in Spain and implanted in Mexico during 17th- and 18th-century colonization. The jarocho style of music today is one of Latin America's most unique forms, using one to four instruments and characterized by its distinctive rhythm. (LC)

  18. African American Single Mothers Raising Sons: Implications for Family Therapy

    Science.gov (United States)

    Gantt, Ann L.; Greif, Geoffrey L.

    2009-01-01

    Being raised by a single mother is one factor that has been suggested as contributing to the plight of African American males. Yet few studies have focused specifically on African American single mothers' experiences with raising sons. This qualitative study explored the following questions: (1) What are the experiences of African American single…

  19. Wavelength stabilized multi-kW diode laser systems

    Science.gov (United States)

    Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

    2015-03-01

    We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

  20. In vivo dosimetry with silicon diodes in total body irradiation

    Science.gov (United States)

    Oliveira, F. F.; Amaral, L. L.; Costa, A. M.; Netto, T. G.

    2014-02-01

    The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments.

  1. Novel high peak current pulsed diode laser sources for direct material processing

    Science.gov (United States)

    Traub, M.; Bock, M.; Hoffmann, H.-D.; Bartram, M.

    2007-02-01

    Diode laser systems are well established for applications which demand high continuous wave (cw) power. These applications are material processing like cutting and welding of metals as well as polymers where diode laser systems are less expensive and more compact than solid state lasers. Even though the optical output power and the beam quality of diode lasers are increasing steadily, the use of these sources is generally limited to cw applications. For processes during which ablating of material is demanded, however, conventional diode lasers are inferior compared to pulsed solid state lasers as diode lasers suffer from the absence of optical intracavity q-switching. Some examples of these applications are coating removal and marking. To overcome this drawback, we have developed several diode laser systems that use high peak-current drivers and thereby allow to operate the diode lasers at currents up to 500 A. The pulse source was tested with fiber coupled single emitters, conventional diode lasers and customized AR-coated diode laser bars. With the new diode laser driver, a peak output power of 250 W can be achieved with pulse durations of approx. 100 ns. Polarization coupling of two bars increases the power by a factor of two. Thereby an output power of 500 W can be demonstrated. These systems reach an intensity of 27 MW/cm2 per diode laser bar which is sufficient for ablating processes. We will demonstrate the design of the prototype system as well as results of marking and coating removal experiments with the system.

  2. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  3. Thermo-enhanced field emission from ZnO nanowires: Role of defects and application in a diode flat panel X-ray source

    Science.gov (United States)

    Zhang, Zhipeng; Chen, Daokun; Chen, Wenqing; Chen, Yicong; Song, Xiaomeng; Zhan, Runze; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2017-03-01

    A thermo-enhanced field emission phenomenon was observed from ZnO nanowires. The field emission current increased by almost two orders of magnitude under a constant applied electric field, and the turn-on field decreased from 6.04 MV/m to 5.0 MV/m when the temperature increased from 323 to 723 K. The Poole-Frenkel electron excitation from the defect-induced trapping centers to the conduction band under high electric fields is believed to be the primary cause of the observed phenomenon. The experimental results fit well with the proposed physical model. The field emission from ZnO nanowires with different defect concentrations further confirmed the role of defects. Using the thermo-enhanced field emission phenomenon, a diode flat panel X-ray source was demonstrated, for which the energy and dose can be separately tuned. The thermo-enhanced field emission phenomenon observed from ZnO nanowires could be an effective way to realize a large area flat panel multi-energy X-ray source.

  4. The Photoluminescent Properties of New Cationic Iridium(III Complexes Using Different Anions and Their Applications in White Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Hui Yang

    2015-09-01

    Full Text Available Three cationic iridium(III complexes [Ir(ppy2(phen][PF6] (C1, [Ir(ppy2(phen]2SiF6 (C2 and [Ir(ppy2(phen]2TiF6 (C3 (ppy: 2-phenylpyridine, phen: 1, 10-phenanthroline using different anions were synthesized and characterized by 1H Nuclear magnetic resonance (1HNMR, mass spectra (MS, Fourier transform infrared (FTIR spectra and element analysis (EA. After the ultraviolet visible (UV-vis absorption spectra, photoluminescent (PL properties and thermal properties of the complexes were investigated, complex C1 and C3 with good optical properties and high thermal stability were used in white light-emitting diodes (WLEDs as luminescence conversion materials by incorporation with 460 nm-emitting blue GaN chips. The integrative performances of the WLEDs fabricated with complex C1 and C3 are better than those fabricated with the widely used yellow phosphor Y3Al5O12:Ce3+ (YAG. The color rendering indexes of the WLEDs with C1 and C3 are 82.0 and 82.6, the color temperatures of them are 5912 K and 3717 K, and the maximum power efficiencies of them are 10.61 Lm·W−1 and 11.41 Lm·W−1, respectively.

  5. Validation and application of cavity-enhanced, near-infrared tunable diode laser absorption spectrometry for measurements of methane carbon isotopes at ambient concentrations.

    Science.gov (United States)

    Mortazavi, Behzad; Wilson, Benjamin J; Dong, Feng; Gupta, Manish; Baer, Doug

    2013-10-15

    Methane is an effective greenhouse gas but has a short residence time in the atmosphere, and therefore, reductions in emissions can alleviate its greenhouse gas warming effect within a decadal time frame. Continuous and high temporal resolution measurements of methane concentrations and carbon isotopic ratios (δ(13)CH4) can inform on mechanisms of formation, provide constraints on emissions sources, and guide future mitigation efforts. We describe the development, validation, and deployment of a cavity-enhanced, near-infrared tunable diode laser absorption spectrometry system capable of quantifying δ(13)CH4 at ambient methane concentrations. Laboratory validation and testing show that the instrument is capable of operating over a wide dynamic range of methane concentration and provides a measurement precision for δ(13)CH4 of better than ± 0.5 ‰ (1σ) over 1000 s of data averaging at ambient methane concentrations. The analyzer is accurate to better than ± 0.5 ‰, as demonstrated by measurements of characterized methane/air samples with minimal dependence (methane concentration. Deployment of the instrument at a marsh over multiple days demonstrated how methane fluxes varied by an order of magnitude over 2 day deployment periods, and showed a 17 ‰ variability in δ(13)CH4 of the emitted methane during the growing season.

  6. Synthesis of Zn(1-x)Cd(x)S:Mn/ZnS quantum dots and their application to light-emitting diodes.

    Science.gov (United States)

    Kim, Jong-Uk; Lee, Myung-Hyun; Yang, Heesun

    2008-11-19

    3.6 nm sized Mn-doped Zn(1-x)Cd(x)S quantum dots (QDs) with the composition (x) of 1, 0.5, 0.2 and 0 were synthesized by a reverse micelle approach. The bandgap energy of Zn(1-x)Cd(x)S:Mn QDs was tuned to a higher energy by increasing the Zn content, and the actual composition of alloyed Zn(1-x)Cd(x)S:Mn QDs was found to be different from the solution composition. Consecutive overcoating of the Zn(1-x)Cd(x)S:Mn QD surface by a ZnS shell was done, and the core/shell structured QDs exhibited quantum yields of 14-30%, depending on the composition of the core QDs. Using CdS:Mn/ZnS QDs, orange and white light-emitting diodes (LEDs) pumped by a near-UV and blue LED chips, respectively, were fabricated and their optical properties are described.

  7. Low Temperature DC Sputtering Deposition on Indium-Tin Oxide Film and Its Application to Inverted Top-emitting Organic Light-emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    Hui LIN; Junsheng YU; Shuangling LOU; Jun WANG; Yadong JIANG

    2008-01-01

    Indium tin oxide (ITO) ultrathin films were prepared on glass substrate by DC (direct current) magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction (XRD) technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H20 during sputtering process was almost amor- phous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes (IT-OLEDs) with the structure of glass substrate/AIq3 (40 nm)/NPB (15 nm)/CuPc(x nm)/ITO anode (100 nm), where the film thickness of CuPc was optimized. It was found that the lumi-nance of this IT-OLEDs was improved from 25 cd/m2 to more than 527 cd/m2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.

  8. Application of the diode laser for welding in tairoled blanks; Aplicaciond el lase de diodo para la soldadura en tailored blanks

    Energy Technology Data Exchange (ETDEWEB)

    Bocos, J. L.; Zubiri, F.; Garciandia, F.; Pena, J.; Cortiella, A.; Berrueta, J. M.; Zapirain, F.

    2004-07-01

    During the last years, one of the most interesting subjects in the automotive industry is the weight reduction of the automobile, and so to diminish the fuel consumption. Among other performance, the use in the body car of materials which have high mechanical resistance must be considered for the weight reduction of the automobile and maintaining high benefits. In this work, it has been studied the utilization of the diode laser for high resistance steel sheets welding, concretely microalloying steels (ZStE), DP dual phase and TRIP transformation induced plasticity. These steels can be employed in tailored blanks, which are defined as two or more separate pieces of flat material of dissimilar thickness and/or physical properties joined together before forming, to provide superior qualities in the finished stamped part. In this study, the metallographic characterization has been realised in the welding seams, and the mechanical behaviour has been analysed employing the following tests: microhardenss, drawing, tensile and fatigue. (Author) 15 refs.

  9. Photo- and electroluminescent properties of bithiophene disubstituted 1,3,4-thiadiazoles and their application as active components in organic light emitting diodes

    Science.gov (United States)

    Grykien, Remigiusz; Luszczynska, Beata; Glowacki, Ireneusz; Kurach, Ewa; Rybakiewicz, Renata; Kotwica, Kamil; Zagorska, Malgorzata; Pron, Adam; Tassini, Paolo; Maglione, Maria Grazia; Mauro, Anna De Girolamo Del; Fasolino, Tommaso; Rega, Romina; Pandolfi, Giuseppe; Minarini, Carla; Aprano, Salvatore

    2014-11-01

    Photo- and electroluminescence of five bithiophene disubstituted 1,3,4-thiadiazoles, constituting a new class of solution processable materials for organic opto-electronics, were studied. It was found that the introduction of alkyl solubilizing substituents bathochromically shifted the photo- and electroluminescence bands. The most pronounced effect was observed for the substitution at the Cα position which changed the emitting light color from bluish to green. All five derivatives were tested in host/guest type organic light emitting diodes (OLEDs) with either poly(N-vinylcarbazole) (PVK) or poly(N-vinylcarbazole) + 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PVK + PBD) matrices. The latter matrix turned out especially well suited for these guest molecules yielding devices of varying color coordinates. The best luminance (750 cd/m2) was measured for 2,5-bis(5‧-octyl-2,2‧-bithiophene-5-yl)-1,3,4-thiadiazole with the luminous efficiency exceeding 0.4 cd/A.

  10. Luminescence properties of a novel green emitting Ba2CaZn2Si6O17:Eu2+ phosphor for white light - Emitting diodes applications

    Science.gov (United States)

    Annadurai, G.; Kennedy, S. Masilla Moses; Sivakumar, V.

    2016-05-01

    A novel green emitting Ba2CaZn2Si6O17:Eu2+ (BCZSO:Eu2+) phosphor was synthesized using conventional high temperature solid state reaction method. Powder X-ray diffraction was carried out to confirm the phase formation of the synthesized phosphors. Photoluminescence emission spectrum was recorded under excitation at 340 nm. The BCZSO:Eu2+ phosphor exhibited an intense asymmetric green emission band around 502 nm which originated from the 4f65d1 → 4f7 transition of Eu2+ ion. The optimum doping concentration of Eu2+ was found to be 0.06 mol. The energy transfer mechanism among Eu2+ in BCZSO phosphor was found to be a dipole-dipole interaction, and the critical distance (RC) for the Eu2+ ions calculated by the concentration quenching and spectral overlap methods were 23.2 Å and 13.7 Å, respectively. The decay curve of BCZSO:Eu2+ phosphors were discussed. The CIE chromaticity coordinate values (x = 0.259, y = 0.463) of BCZSO:Eu2+ phosphor were located in green region and the correlated color temperature was 7571 K. All these properties gave an indication that BCZSO:Eu2+ phosphor could be a potential green-emitting phosphor for UV based white light emitting diodes.

  11. Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.

    Science.gov (United States)

    Kim, Hee-Dong; Kim, Kyeong Heon; Kim, Su Jin; Kim, Tae Geun

    2015-11-02

    A novel conducting filament (CF)-embedded indium tin oxide (ITO) film is fabricated using an electrical breakdown method. To assess the performance of this layer as an ohmic contact, it is applied to GaN (gallium nitride) light-emitting diodes (LEDs) as a p-type electrode for comparison with typical GaN LEDs using metallic ITO. The operating voltage and output power of the LED with the CF embedded ITO are 3.93 V and 8.49 mW, respectively, at an injection current of 100 mA. This is comparable to the operating voltage and output power of the conventionally fabricated LEDs using metallic ITO (3.93 V and 8.43 mW). Moreover, the CF-ITO LED displays uniform and bright light emission indicating excellent current injection and spreading. These results suggest that the proposed method of forming ohmic contacts is at least as effective as the conventional method.

  12. Low-Temperature Growth of Well-Aligned ZnO Nanorod Arrays by Chemical Bath Deposition for Schottky Diode Application

    Science.gov (United States)

    Yuan, Zhaolin

    2015-04-01

    A well-aligned ZnO nanorod array (ZNRA) was successfully grown on an indium tin oxide (ITO) substrate by chemical bath deposition at low temperature. The morphology, crystalline structure, transmittance spectrum and photoluminescence spectrum of as-grown ZNRA were investigated by field emission scanning electron microscopy, x-ray diffraction, ultraviolet-visible spectroscopy and spectrophotometer, respectively. The results of these measurements showed that the ZNRA contained densely packed, aligned nanorods with diameters from 30 nm to 40 nm and a wurtzite structure. The ZNRA exhibited good optical transparency within the visible spectral range, with >80% transmission. Gold (Au) was deposited on top of the ZNRA, and the current-voltage characteristics of the resulting ITO/ZNRA/Au device in the dark were evaluated in detail. The ITO/ZNRA/Au device acted as a Schottky barrier diode with rectifying behaviour, low turn-on voltage (0.6 V), small reverse-bias saturation current (3.73 × 10-6 A), a high ideality factor (3.75), and a reasonable barrier height (0.65 V) between the ZNRA and Au.

  13. An application of wavelet moments to the similarity analysis of three-dimensional fingerprint spectra obtained by high-performance liquid chromatography coupled with diode array detector.

    Science.gov (United States)

    Zhai, Hong Lin; Li, Bao Qiong; Tian, Yue Li; Li, Pei Zhen; Zhang, Xiao Yun

    2014-02-15

    More and more the three-dimensional (3D) fingerprint spectra, which can be obtained by high performance liquid chromatography coupled with diode array detector (HPLC-DAD), are applied to the analysis of drugs and foods. A novel approach to the similarity analysis of traditional Chinese medicines (TCMs) was proposed based on the digital image processing using 3D HPLC-DAD fingerprint spectra. As the one of shape features of digital grayscale image, wavelet moments were employed to extract the shape features from the grayscale images of 3D fingerprint spectra of different Coptis chinensis samples, and used to the similarity analysis of these samples. Compared with the results obtained by traditional features including principal components and spectrum data under single-wavelength, our results represented the more reliable assessment. This work indicates that the better features of fingerprint spectra are more important than similarity evaluation methods. Wavelet moments, which possess multi-resolution specialty and the invariance property in image processing, are more effective than traditional spectral features for the description of the systemic characterisation of mixture sample.

  14. New laser materials for laser diode pumping

    Science.gov (United States)

    Jenssen, H. P.

    1990-01-01

    The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

  15. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications.

  16. Analysis of Simultaneous Gas-Liquid Flow Through an Orifice and Its Application to Flow Metering Etude de l'écoulement simultané d'un mélange gaz-liquide à travers un orifice et son application à la mesure du débit

    Directory of Open Access Journals (Sweden)

    Pascal H.

    2006-11-01

    Full Text Available The purpose of this article is to show a more accurate orifice equation for a two-phase flow, such a compressible mixture of gas and liquid. The orifice equation given here con be used for the measurement of a gas-liquid mixture of fine emulsions by the orificemeter method. From the thermodynamic point of view, an equation of state has been formulated which provides the relationship between the specific mass of the mixture and pressure, under conditions of adiabatic expansion. The results obtained enable the mass flow rates of gas and liquid ta be determined without separation of the phases, provided thot the gas liquid mass ratio is known. The critical pressure ratio corresponding ta sonic velocity is also determined. Cet article présente une relation plus précise pour l'écoulement d'un système à deux phases, tel qu'un mélange compressible gaz-liquide, à travers un diaphragme. Cette relation peut être utilisée pour des mesures de mélanges gaz-liquide très finement divisés, c'est-à-dire des émulsions ou brouillards, par la méthode du diaphragme en paroi mince. Du point de vue thermodynamique, on a formulé une équation d'état donnant la relation entre la masse spécifique du mélange et la pression dans des conditions d'expansion adiabatique. Les résultats obtenus per-mettent de déterminer le débit massique du gaz et du liquide, sans séparation des deux phases, à condition que le rapport de masse gaz-liquide soit connu. On détermine également le rapport de pression critique correspondantà la vitesse du son.

  17. Rational design of multifunctional star-shaped molecules with a 1,3,5-triazine core and different arms for application in organic light-emitting diodes and organic solar cells.

    Science.gov (United States)

    Jin, Ruifa

    2015-08-01

    A series of star-shaped 1,3,5-triazine derivatives for intended application in organic light-emitting diodes (OLEDs) and organic solar cells (OSCs) were investigated theoretically to explore their optical, electronic, and charge-transport properties. Analysis of their frontier molecular orbitals (FMOs) indicated that vertical electronic transitions associated with absorption and emission by these derivatives can be characterized as intramolecular charge-transfer (ICT) processes. The calculated results show that the optical, electronic, and charge-transport properties of the derivatives are influenced by the end groups and π-bridges present. Our results suggest that the molecules under investigation could serve as donor materials in OSCs and/or luminescent materials in OLEDs. In addition, all of the molecules are expected to be promising candidates for hole- and electron-transport materials. Based on our results, we were able to propose a rational method of designing multifunctional materials for application in OLEDs and OSCs. Graphical abstract A series of multifunctional star-shaped small molecules were investigated as charge-transport and luminescent materials for OLEDs as well as charge-transport and donor materials for OSCs.

  18. Angled stripe superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, L.; Morrison, C.B.; Zinkiewicz, L.M.; Niesen, J.W.

    1989-08-08

    This patent describes a superluminescent light-emitting diode device having high power output and high spectral bandwidth. The device comprising: a semiconductor structure including at least one channel region formed in a semiconductor substrate and filled with a first semiconductor cladding layer of material having a higher index of refraction than substrate material outside the channel region, to provide lateral index-guiding of light within the channel region. The semiconductor structure also including a second semiconductor cladding layer of opposite conductivity type to the first, an active semiconductor layer at a junction between the first and second semiconductor cladding layers, and at least one emitting facet formed at a channel end; means for applying an electrical forward-bias voltage across the junction to produce emission of light; and wherein the channel is slightly inclined to a direction normal to the facet, to suppress lasing within the device, which can then operated at high powers and a broad spectral width.

  19. Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation

    Institute of Scientific and Technical Information of China (English)

    GAO Yong; LIU Jing; YANG Yuan

    2008-01-01

    Temperature-dependent characteristics of SiGeC p-i-n diodes are analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400 K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300 K to 400 K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400 K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400 K.

  20. Synthesis, characterization and properties of novel blue light emitting discrete π-functional polymer consisting of carbazole and anthracene units and their applications in polymer light emitting diodes

    Science.gov (United States)

    Gopal, Ram; Huang, Yi-Chiang; Lee, Hsu-Feng; Chang, Ming-Sien; Huang, Wen-Yao

    2017-03-01

    A new novel blue light emitting polymer containing carbazole and anthracene derivatives has been successfully synthesized via polycondensation chemical reaction of diol and difluoro monomers. An effort has been made to raise the band gap of blue light emitter by lowering the conjugation extent in the backbone. The synthesized blue polymer exhibits decent solubility, good process ability, high thermal stability, high glass transition temperature (272 °C) and the decomposition temperature of 358 °C. The UV-vis absorption spectra and photoluminescence spectra depict that the light emission lies in blue region. The solid state photoluminescence (PL) spectra of the polymer (λPL=456 nm) shows red shift (Δλ = 37 nm) as compared with the corresponding solution PL spectra, presumably due to lower intermolecular distance in solid state. The multi-layered polymer light emitting diode was fabricated, using blue polymer with ITO/PEDOT: PSS/BP/LiF/Al architecture. The luminance-voltage (L-V) and current density-voltage (J-V) curves show a maximum luminance of 7544 cd m-2, a maximum emission efficiency of 4.2 cd A-1, a maximum current density of 453 mA cm-2 at a turn-on voltage of 4.5 V. Moreover, the PLED instigate pure blue EL emission, stable at 436 nm with outstanding CIE coordinates of (x = 0.15, y = 0.08), which is close to the pure NTSC blue coordinates of (0.14, 0.08). [Figure not available: see fulltext.

  1. A comparative evaluation to assess the efficacy of 5% sodium fluoride varnish and diode laser and their combined application in the treatment of dentin hypersensitivity.

    Science.gov (United States)

    Suri, Isha; Singh, Poonam; Shakir, Quaid Johar; Shetty, Arvind; Bapat, Ranjeet; Thakur, Roshani

    2016-01-01

    Dentin hypersensitivity (DH) is an age old complaint with a great number of treatment modalities, but none of these are totally effective till date. Lasers being one of the latest treatment options in periodontics, a study was conducted to test the efficacy of diode laser (DL) in DH alone and in comparison with 5% sodium fluoride (NaF) varnish. The aim of the present study was to compare the effectiveness of 5% topical NaF varnish and 980 nm gallium aluminum arsenide (GaAlAs) DL alone and combination of 5% NaF + 980 nm GaAlAs DL in the management of DH. The study was conducted on 120 teeth in thirty patients with DH assessed by tactile and air blast (AB) stimuli measured by visual analog scale (VAS). Teeth were randomly divided into Group 1 (P) placebo-treated control group, Group 2 (NaF) treated by 5% NaF varnish, Group 3 (DL) treated with 980 nm DL, and Group 4 (NaF + DL) treated with both 5% NaF varnish and 980 nm DL (combination group). There was a significant reduction in DH. The VAS reduction percentages were calculated, and there was a significant decrease in DH above all in G4 (NaF + DL) than G3 (DL) and G2 (NaF). Even though all the three groups (2, 3, and 4) showed improvement in terms of DH reduction, 5% NaF varnish with DL showed the best results among all the groups.

  2. A comparative evaluation to assess the efficacy of 5% sodium fluoride varnish and diode laser and their combined application in the treatment of dentin hypersensitivity

    Directory of Open Access Journals (Sweden)

    Isha Suri

    2016-01-01

    Full Text Available Background: Dentin hypersensitivity (DH is an age old complaint with a great number of treatment modalities, but none of these are totally effective till date. Lasers being one of the latest treatment options in periodontics, a study was conducted to test the efficacy of diode laser (DL in DH alone and in comparison with 5% sodium fluoride (NaF varnish. Aim: The aim of the present study was to compare the effectiveness of 5% topical NaF varnish and 980 nm gallium aluminum arsenide (GaAlAs DL alone and combination of 5% NaF + 980 nm GaAlAs DL in the management of DH. Materials and Methods: The study was conducted on 120 teeth in thirty patients with DH assessed by tactile and air blast (AB stimuli measured by visual analog scale (VAS. Teeth were randomly divided into Group 1 (P placebo-treated control group, Group 2 (NaF treated by 5% NaF varnish, Group 3 (DL treated with 980 nm DL, and Group 4 (NaF + DL treated with both 5% NaF varnish and 980 nm DL (combination group. Results: There was a significant reduction in DH. The VAS reduction percentages were calculated, and there was a significant decrease in DH above all in G4 (NaF + DL than G3 (DL and G2 (NaF. Conclusion: Even though all the three groups (2, 3, and 4 showed improvement in terms of DH reduction, 5% NaF varnish with DL showed the best results among all the groups.

  3. Hybrid polymer waveguide characterization for microoptical tools with integrated laser diode chips for optogenetic applications at 430 nm and 650 nm

    Science.gov (United States)

    Schwaerzle, Michael; Nehlich, Julian; Schwarz, Ulrich T.; Paul, Oliver; Ruther, Patrick

    2016-03-01

    Appropriate micro-optical tools are required to exploit the key advantages of optogenetics in neuroscience, i.e. optical stimulation and inhibition of neural tissue at high spatial as well as temporal resolutions, providing cell specificity and the opportunity to simultaneously record electrophysiological signals. Besides the need for minimally invasive probes mandatory for a reduced tissue damage, highly flexible or wireless interfaces are demanded for experiments with freely behaving animals. Both these technical system requirements are achieved by integrating miniaturized waveguides for light transmission combined with bare laser diode (LD) chips integrated directly into neural probes. This paper describes a system concept using integrated, side emitting LD chips directly coupled to miniaturized waveguides implemented on silicon (Si) substrates. It details the fabrication, assembly, and optical as well as electrical characterization of waveguides (WG) made from the hybrid polymer Ormorcere. The WGs were photolithographically patterned to have a cross-section of 20x15 μm2. Bare LD chips are flip-chip bonded to electroplated gold (Au) pads with +/-5 μm accuracy relative to the WG facets. Transmitted radiant fluxes for blue (430 nm, (Al,In)GaN) and red (650 nm, AlGaInP) LDs are measured to be 150 μW (ID = 35 mA, 5% duty cycle) and 4.35 μW (ID = 225 mA, 0.5% duty cycle), respectively. This corresponds to an efficiency of the coupled and transmitted light of 44% for the red LDs. Long term measurements for 24 h using these systems with red LDs showed a decrease of the radiant flux of about 4% caused by LD aging at stable WG transmission properties. WGs immersed into Ringer's solution showed no significant change of their optical transmission properties after four weeks of exposure to the ionic solution.

  4. Who Will Help My Son?: A Family's Journey with Dyslexia.

    Science.gov (United States)

    DeBrew, Jacqueline

    2017-08-01

    It may seem unusual for a nurse to intervene and assist a child with a learning disability, but a mental health nurse who knows the warning signs of dyslexia is able to help families who are going through a difficult time. The current article details the author's experience regarding her son's dyslexia diagnosis. For her family, a nurse was a valuable resource. The impact the struggle had not only on her son, but also her family, and the changes brought about by getting a diagnosis and treatment, demonstrate the impact that nurses can have when family-focused care is provided. [Journal of Psychosocial Nursing and Mental Health Services, 55(8), 27-30.]. Copyright 2017, SLACK Incorporated.

  5. An ecological reading of the sons and lovers

    Institute of Scientific and Technical Information of China (English)

    徐萌萌

    2012-01-01

    1 .Introduction D.H. Lawrence is one of the greatest writers in the English lit- erature history. The author makes a textual analysis of the novel-- Sons and Lovers, David Herbert Lawrence's third novel Which is also his first masterpiece. The novel is recognized as the pioneer work among English novels and now has become one of the most widespread readings. As his representative, sons and lovers is a work filled with ecological elements, which discovered lots of social and psychological problems through the description of the character Paul's growing. Under the backgrounds of the author's own growing experiences and Industry Revolution, the natural circumstances has been ruined, the sick relationship in the worker's family,

  6. Conflicts between Spirit and Body in Sons and Lovers

    Institute of Scientific and Technical Information of China (English)

    赵佳

    2009-01-01

    The purpose of this paper is to analyze the conflicts between spirit and body that exist among characters in Sons and Lovers. By stating the complicated relationships of Mr. and Mrs. Morel, two sons and their mother, and the protagonist Paul and two women, Miriam and Clara, spirit and body collides and conflicts emerge from time to time. Conflicts between blood ties and lovers' affairs, moral principles and incest, and chastity and lust are reflected on char-acters, especially Paul in the novel. It concludes that Mrs. Morel's influence on Paul's spirit and thought is great. Her spiritual domination on Paul is the main factor for these conflicts. Her death at the end of the story will be a brand-new start of Paul's life.

  7. Maternal smoking in pregnancy and reproductive hormones in adult sons.

    Science.gov (United States)

    Ramlau-Hansen, C H; Thulstrup, A M; Olsen, J; Ernst, E; Andersen, C Y; Bonde, J P

    2008-12-01

    Smoking during pregnancy has been reported to alter levels of reproductive hormones in adult sons. From a Danish pregnancy cohort established in 1984-1987, 347 out of 5109 sons were selected according to their exposure to tobacco smoke in foetal life. From February 2005 to January 2006, a blood sample from each young man (18-21 years) was collected and analysed for reproductive hormones. There were no apparent trends of increasing or decreasing hormonal levels with increased exposure to maternal tobacco smoking during pregnancy. Only the free testosterone/free estradiol ratios increased with increased maternal smoking during pregnancy (p for trend = 0.05). No trends for increasing odds ratios for high follicle-stimulating hormone (> or =25 percentile) or low inhibin B (hormones later in life, but the data may suggest a shift in the hypothalamo-pituitary-gonadal axis towards higher androgenicity. This result was, however, of only borderline significance and could be because of chance.

  8. Fathers and sons: Freud's discovery of the Oedipus complex.

    Science.gov (United States)

    Fuchsman, Kenneth A

    2004-01-01

    Freud's path to the Oedipus complex reveals conceptual inconsistencies. These uncertainties concern fathers, brothers and sons, and the place of the oedipal triad within the family romance. Freud's uncovering of the Oedipus complex emerged, in large part, from his self-analysis of his childhood years in Freiberg. Freud's father was 20 years older than his third wife, and had two adult sons, all of whom lived in Freiberg. In 1897, when Freud announces the Oedipus complex, he stresses his love of his mother and jealousy of his father. Yet in 1924 Freud wrote that his adult brother, Philipp, had taken his father's place as the child's rival. The oedipal complex alters if there are four players rather than three. Freud's concept of an oedipal triangle does not adequately explain the psychological dynamics of his childhood. Fuller conceptual clarity would occur if the dynamics of the Oedipus complex were placed within the family context in which it unfolds.

  9. Private Transfers within the Family: Mothers, Fathers, Sons and Daughters

    OpenAIRE

    Donald Cox

    2003-01-01

    Despite recent advances in data collection and the growing number of empirical studies that examine private intergenerational transfers, there still exist significant gaps in our knowledge. Who transfers what to whom, and why do they it? I argue that some of these gaps could be filled by departing from the standard parent-child framework and concentrating instead on fathers, mothers, sons and daughters in a way that accounts for fundamental--and sometimes obvious--male-female differences in c...

  10. Son preference in Indian families: absolute versus relative wealth effects.

    Science.gov (United States)

    Gaudin, Sylvestre

    2011-02-01

    The desire for male children is prevalent in India, where son preference has been shown to affect fertility behavior and intrahousehold allocation of resources. Economic theory predicts less gender discrimination in wealthier households, but demographers and sociologists have argued that wealth can exacerbate bias in the Indian context. I argue that these apparently conflicting theories can be reconciled and simultaneously tested if one considers that they are based on two different notions of wealth: one related to resource constraints (absolute wealth), and the other to notions of local status (relative wealth). Using cross-sectional data from the 1998-1999 and 2005-2006 National Family and Health Surveys, I construct measures of absolute and relative wealth by using principal components analysis. A series of statistical models of son preference is estimated by using multilevel methods. Results consistently show that higher absolute wealth is strongly associated with lower son preference, and the effect is 20%-40% stronger when the household's community-specific wealth score is included in the regression. Coefficients on relative wealth are positive and significant although lower in magnitude. Results are robust to using different samples, alternative groupings of households in local areas, different estimation methods, and alternative dependent variables.

  11. Like Father, Like Son? Intergenerational Educational Mobility in India.

    Science.gov (United States)

    Azam, Mehtabul; Bhatt, Vipul

    2015-12-01

    Using the nationally representative India Human Development Survey (IHDS), we create a unique son-father matched data set that is representative of the entire adult male population (aged 20-65) in India. We use these data to document the evolution of intergenerational transmission of educational attainment in India over time, among different castes and states for the birth cohorts of 1940-1985. We find that educational persistence, as measured by the regression coefficient of father's education as a predictor of son's education, has declined over time. This implies that increases in average educational attainment are driven primarily by increases among children of less-educated fathers. However, we do not find such a declining trend in the correlation between educational attainment of sons and fathers, which is another commonly used measure of persistence. To understand the source of such a discrepancy between the two measures of educational persistence, we decompose the intergenerational correlation and find that although persistence has declined at the lower end of the fathers' educational distribution, it has increased at the top end of that distribution.

  12. The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

    Science.gov (United States)

    Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

    2016-06-01

    The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth.

  13. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  14. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  15. Design and airborne application of a tunable diode laser spectrometer for in-situ measurements of isotope ratios (δ18O, δD) in water

    Science.gov (United States)

    Dyroff, Christoph; Zahn, Andreas; Fütterer, Daniel

    2010-05-01

    The measurement of isotope ratios in water vapor (H2O) can significantly enhance our understanding of many crucial processes in which atmospheric water is involved. The H2O-isotope ratios collect and conserve the H2O evaporation and condensation history prior to sampling. They thus contain supplementary information on the hydrological atmospheric cycle which H2O-concentration measurements cannot provide. Furthermore, due to the considerable temperature-dependent isotope fractionation, H2O-isotope ratios of cloud particles are a measure of the supersaturation present during cloud formation. While a number of satellite measurements have recently been realized [1-4], they only provide a global picture. Airborne in-situ measurements - which can provide the often necessary high spatial resolution - have very scarcely been performed, and only about four instruments exist worldwide, one of which is the tunable diode-laser spectrometer ISOWAT [5]. In this presentation we discuss the design and performance characteristics of our compact and fully automated airborne spectrometer. ISOWAT will regularly (once per month) be deployed aboard the CARIBIC passenger aircraft (Lufthansa A340-600) [6] as of spring 2010, and we examine the importance and potential of our measurements based on the first in-flight data. Finally we give an outlook to further developments, which will even improve the performance of this instrument. Keywords: Water; Isotope Ratio; Laser Spectroscopy; Airborne Instrumentation References [1] A. E. Dessler, T. F. Hanisco, and S. Fueglistaler, J. Geophys. Res. 112, D18309, 2007. [2] J. Steinwagner, M. Milz, T. von Clarmann, N. Glatthor, U. Grabowski, M. Höpfner, G. P. Stiller, and T. Röckmann, Atmos. Chem. Phys. 7, 2601-2615, 2007. [3] V. H. Payne, D. Noone, A. Dudhia, C. Piccolo, and R. G. Grainger, Q. J. R. Meteorol. Soc. 133, 1459-1471, 2007. [4] D. Brown, J. Worden, and D. Noone, J. Geophys. Res. 113, D15124, 2008. [5] C. Dyroff, D. Fütterer, and A. Zahn

  16. Extensions of I{sub X}T{sub E}T and its application to electric power network supervision; Extensions d`I{sub X}T{sub E}t pour son application a la supervision d`un reseau electrique

    Energy Technology Data Exchange (ETDEWEB)

    Despouys, O.; Ingrand, F.; Ghallab, M.; Gouyon, J.P.

    1997-07-01

    A chronicle model describes a set of possible behaviours for a given dynamic system. I{sub X}T{sub E}T uses a reified logic and temporal constraints to describe chronicles. It also uses algorithms which allow it to recognize all the instances of theses chronicles through a stream of time-stamped events given as an input. I{sub X}T{sub E}T is used in a number of complex supervision applications. Recent extensions to I{sub X}T{sub E}T, enabling its application at the national utility Electricite de France for electric network supervision and more especially for event and fault diagnosis. The new approach, notably based on facultative events or non-events, is compared to the FONSYNT previous supervision approach used at EDF

  17. Ablation of dentin by irradiation of violet diode laser

    Science.gov (United States)

    Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

    2006-02-01

    Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

  18. FY2002 Progress Summary Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers, and Complementary Technologies, for Applications in Energy and Defense

    Energy Technology Data Exchange (ETDEWEB)

    Bayramian, A; Bibeau, C; Beach, R; Behrendt, B; Ebbers, C; Latkowski, J; Meier, W; Payne, S; Perkins, J; Schaffers, K; Skulina, K; Ditmire, T; Kelly, J; Waxer, L; Rudi, P; Randles, M; Witter, D; Meissner, H; Merissner, O

    2001-12-13

    The High Average Power Laser Program (HAPL) is a multi-institutional, coordinated effort to develop a high-energy, repetitively pulsed laser system for Inertial Fusion Energy and other DOE and DOD applications. This program is building a laser-fusion energy base to complement the laser-fusion science developed by DOE Defense programs over the past 25 years. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and LLNL. The current LLNL proposal is a companion proposal to that submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. Aside from the driver development aspect, the NRL and LLNL companion proposals pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, materials and power plant economics. This report requests continued funding in FY02 to support LLNL in its program to build a 1kW, 100J, diode-pumped, crystalline laser. In addition, research in high gain laser target design, fusion chamber issues and survivability of the final optic element will be pursued. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments.

  19. [Bladder cancer at an early age in father and son].

    Science.gov (United States)

    Ovsiannikov, D; Stöhr, R; Hartmann, A; Böttrich, R; Hengstler, J G; Golka, K

    2011-12-01

    Bladder cancer may be caused by external factors like tobacco smoking, but may also be familial. We report on a father and son who developed this tumour at the ages of 45 and 35. Testing various genetic markers including the mismatch repair proteins MLH1, MSH2 and MSH6, whose loss is associated with a higher risk for hereditary non-polyposis colorectal cancer (HNPCC, Lynch syndrome), did not point to a familial disease. Thus the heavy smoking habits of the two patients must be considered as causal.

  20. Adolescent sexual matricide following repetitive mother-son incest.

    Science.gov (United States)

    Schlesinger, L B

    1999-07-01

    A case of a 16-year-old male who committed a sexual matricide following years of mother-son incest is reported. After murdering his mother by strangulation, which itself was sexually arousing, the youngster engaged in both vaginal and anal necrophilia. The homicide occurred while the perpetrator was in a dissociative state and experiencing what has been referred to as a catathymic crisis: the sudden release of emotionally charged psychic conflict and tension, resulting in extreme violence within an interpersonal bond. Discussion of maternal image and maternal sexual conduct in relationship to the psychosexual development of adolescent males offers insight into the motivation in this extremely rare case.

  1. Experimental Violation of Bell Inequality beyond Cirel'son's Bound

    CERN Document Server

    Chen, Y A; Pan, J W; Yang, T; Zhang, A N; Zhao, Z; Cabello, Adan; Chen, Yu-Ao; Pan, Jian-Wei; Yang, Tao; Zhang, An-Ning; Zhao, Zhi

    2006-01-01

    The correlations between two qubits belonging to a three-qubit system can violate the Clauser-Horne-Shimony-Holt-Bell inequality beyond Cirel'son's bound [A. Cabello, Phys. Rev. Lett. 88, 060403 (2002)]. We experimentally demonstrate such a violation by 7 standard deviations by using a three-photon polarization-entangled Greenberger-Horne-Zeilinger state produced by Type-II spontaneous parametric down-conversion. In addition, using part of our results, we obtain a violation of the Mermin inequality by 39 standard deviations.

  2. ¿Son las mujeres una minoría?

    OpenAIRE

    Osborne, Raquel

    1996-01-01

    Not available.

    El clásico tratamiento de las mujeres como minoría desde la sociología se halla contemporáneamente interrelacionado con las políticas de igualdad tejidas en torno a las mujeres. Pasado y presente, teoría y práctica se unen para mostrar que las teorías no son accidentales ni fortuitas sino que acarrean importantes consecuencias en la acción, pudiendo dar lugar a intervenciones en la vida pública, que es lo que, a mi entender, confiere su sentido a la. sociolog...

  3. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

    OpenAIRE

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-01-01

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increa...

  4. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  5. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

    Science.gov (United States)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-06

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  6. Time delay of wave packets during their tunnelling through a quantum diode

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, N A; Skalozub, V V [Dnipropetrovsk National University Oles Honchar (Ukraine)

    2014-04-28

    A modified saddle-point method is used to investigate the process of propagation of a wave packet through a quantum diode. A scattering matrix is constructed for the structure in question. The case of tunnelling of a packet with a Gaussian envelope through the diode is considered in detail. The time delay and the shape of the wave packet transmitted are calculated. The dependence of the delay time on the characteristics of the input packet and the internal characteristics of the quantum diode is studied. Possible applications of the results obtained are discussed. (laser applications and other topics in quantum electronics)

  7. Son preference, sex selection, and kinship in Vietnam.

    Science.gov (United States)

    Guilmoto, Christophe Z

    2012-01-01

    This article examines the recent rise in the sex ratio at birth in Vietnam and relates its emergence to kinship systems and ethnic composition using 2009 census micro-data. Presentation of the main socioeconomic and ethnic differentials in birth masculinity is followed by a review of the three intermediate factors leading to increases in the sex ratio at birth: prenatal technology, declining fertility, and gender bias. An indirect measurement of fertility behavior is used to demonstrate the close association between levels of the sex ratio at birth and the intensity of son preference. Data on household composition indicate that Vietnam is characterized by the co-existence of kinship patterns typical of East and Southeast Asia. Son preference in Vietnam is found to be related to the prevalence of more traditional patrilineal systems. The article concludes by considering the implications of the cultural dimensions of prenatal sex selection for policy responses and for the likely future change in the sex ratio at birth.

  8. Visible optical radiation generates bactericidal effect applicable for inactivation of health care associated germs demonstrated by inactivation of E. coli and B. subtilis using 405-nm and 460-nm light emitting diodes

    Science.gov (United States)

    Hönes, Katharina; Stangl, Felix; Sift, Michael; Hessling, Martin

    2015-07-01

    The Ulm University of Applied Sciences is investigating a technique using visible optical radiation (405 nm and 460 nm) to inactivate health-hazardous bacteria in water. A conceivable application could be point-of-use disinfection implementations in developing countries for safe drinking water supply. Another possible application field could be to provide sterile water in medical institutions like hospitals or dental surgeries where contaminated pipework or long-term disuse often results in higher germ concentrations. Optical radiation for disinfection is presently mostly used in UV wavelength ranges but the possibility of bacterial inactivation with visible light was so far generally disregarded. One of the advantages of visible light is, that instead of mercury arc lamps, light emitting diodes could be used, which are commercially available and therefore cost-efficient concerning the visible light spectrum. Furthermore they inherit a considerable longer life span than UV-C LEDs and are non-hazardous in contrast to mercury arc lamps. Above all there are specific germs, like Bacillus subtilis, which show an inactivation resistance to UV-C wavelengths. Due to the totally different deactivation mechanism even higher disinfection rates are reached, compared to Escherichia coli as a standard laboratory germ. By 460 nm a reduction of three log-levels appeared with Bacillus subtilis and a half log-level with Escherichia coli both at a dose of about 300 J/cm². By the more efficient wavelength of 405 nm four and a half log-levels are reached with Bacillus subtilis and one and a half log-level with Escherichia coli also both at a dose of about 300 J/cm². In addition the employed optical setup, which delivered a homogeneous illumination and skirts the need of a stirring technique to compensate irregularities, was an important improvement compared to previous published setups. Evaluated by optical simulation in ZEMAX® the designed optical element provided proven

  9. Application Principle and Technology Progress in Using LightEmitting Diode (LED) Light Sources in Modern Agriculture%LED光源在现代农业的应用原理与技术进展

    Institute of Scientific and Technical Information of China (English)

    杨其长; 徐志刚; 陈弘达; 泮进明; 魏灵玲; 刘文科; 周泓; 刘晓英; 宋昌斌

    2011-01-01

    The application of light-emitting diode (LED) in modern agriculture has been increasingly concerned by countries worldwide with the development of LED technology and the decrease of its cost. LED has many advantages compared with the other electric light sources. First, it has good traits of photoelectric such as small size, longer life, low energy consumption, high luminous efficiency and low heat production. Second, light spectral composition of LED light source can be easily integrated or tailored according to the need of plant. LED light sources can efficiently promote the growth & development, photo-morphogenesism, yield and quality of agricultural organisms. In this paper, application status of LED in agriculture was outlined, potential of LED application was analyzed, and key (actors that limits application of LED in agriculture was pointed out. Finally, future development strategy, orientations and countermeasures of LED application in modern agriculture were discussed.%随着LED技术的发展和制造成本的下降,LED光源在现代农业中的应用越来越受到世界各国的广泛关注.LED不仅具有体积小、寿命长、能耗低、发光效率高、发热低等光电特性优点,而且还能根据农业生物的需要进行光谱的精确配置,促进农业生物的生长发育和光形态建成,从而提高其产量和品质.本文介绍了LED在农业照明领域的应用现状,分析了LED在农业领域的应用潜力,指出了限制农用LED推广应用的关键因素,并提出促进LED在现代农业中应用的发展思路、方向和重点以及对策.

  10. Light-Emitting Diodes in the Solid-State Lighting Systems

    CERN Document Server

    Sparavigna, Amelia Carolina

    2014-01-01

    Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lighting, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps.

  11. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

    OpenAIRE

    Meisam Rahmani; Razali Ismail; Mohammad Taghi Ahmadi; Mohammad Javad Kiani; Mehdi Saeidmanesh; F. A. Hediyeh Karimi; Elnaz Akbari; Komeil Rahmani

    2013-01-01

    Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA ...

  12. Superluminescent diode versus Fabry-Perot laser diode seeding in pulsed MOPA fiber laser systems for SBS suppression

    Science.gov (United States)

    Melo, M.; Sousa, J. M.; Salcedo, J. R.

    2015-03-01

    We demonstrate the use of a pulsed superluminescent diode (SLD) through direct current injection modulation as seeding source in a master oscillator power amplifier (MOPA) configuration when compared to a Fabry-Perot (FP) laser diode in the same system. The performance limitations imposed by the use of the Fabry-Perot lasers, caused by the backward high peak power pulses triggered due to stimulated Brillouin scattering (SBS) are not observed in the case of the SLD. Compared to conventional Fabry-Perot laser diodes, the SLD provides a smooth and broad output spectrum which is independent of the input pulse parameters. Moreover, the spectrum can be sliced and tailored to the application. Thus, free SBS operation is shown when using the SLD seeder in the same system, allowing for a significant increase on the extractable power and energy.

  13. Co-Identity with Son Is Core Component in Father's Development: Same-Gendered Father/Son Relationships Foster Relational Development in Fathers

    Science.gov (United States)

    Watson-Phillips, Carol

    2017-01-01

    What is the crucible of a father's relationally transformative growth in connection with his sons? In this article, the author first contextualizes relational theory, and then explores the idea that co-identity with a son provides the mortar and pestle for a father's development in same-gendered relationships. In connection with his son, a father…

  14. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-19

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  15. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-01

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  16. Terapia vocal e sons nasais: efeitos sobre disfonias hiperfuncionais

    Directory of Open Access Journals (Sweden)

    Simone Rattay Andrade

    2016-02-01

    Full Text Available RESUMO Buscou-se verificar os efeitos de um programa fonoterapêutico que incluiu orientação vocal e postural, adequação da função respiratória e a técnica de sons nasais em disfonias hiperfuncionais. Foi realizado um estudo de casos clínicos, observacional, longitudinal, não controlado, de caráter quantitativo que analisou três sujeitos do sexo feminino com idade média de 31,33 anos que apresentavam disfonias hiperfuncionais. Os sujeitos foram submetidos a: videolaringoscopia, avaliação vocal perceptivoauditiva e acústica, coleta de tempos máximos de fonação, triagem postural e determinação do tipo respiratório durante a fala, antes e após um programa terapêutico composto por orientação, conscientização e treinamento vocal com sons nasais durante 16 sessões de fonoterapia, uma vez na semana com treinamento em domicílio. Os dados foram analisados por meio dos testes não-paramétricos Mann-Whitney e Qui-quadrado, com nível de significância de 5%. Pós-terapia, observou-se que a postura corporal passou de desalinhada para alinhada e o tipo respiratório de superior para costodiafragmático abdominal; houve diminuição das medidas acústicas em relação ao grau e número de subharmônicos na maioria significante dos sujeitos, além de melhoras teciduais e diminuição do edema na mucosa das pregas vocais e na região aritenoide, e melhora da coaptação glótica. Após a execução de um programa fonoterapêutico com orientação vocal e postural, adequação da função respiratória e uso da técnica de sons nasais em disfonias hiperfuncionais, observou-se melhora significante da postura corporal, do tipo respiratório, das medidas acústicas sugestivas de ruído à emissão vocal, e efeitos positivos sobre o tecido e o fechamento das pregas vocais.

  17. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  18. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities

    Science.gov (United States)

    Hafiz, Shopan din Ahmad

    InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1-xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving more efficient visible light emitters and terahertz generating nanocavities and in colloidal Ge1-xSnx quantum dots (QDs) for developing efficient silicon compatible optoelectronics. To alleviate the electron overflow, which through strong experimental evidence is revealed to be the dominating mechanism responsible for efficiency degradation at high injection in InGaN based blue LEDs, different strategies involving electron injectors and optimized active regions have been developed. Effectiveness of optimum electron injector (EI) layers in reducing electron overflow and increasing quantum efficiency of InGaN based LEDs was demonstrated by photoluminescence (PL) and electroluminescence spectroscopy along with numerical simulations. Increasing the two-layer EI thickness in double heterostructure LEDs substantially reduced the electron overflow and increased external quantum efficiency (EQE) by three fold. By incorporating delta p-doped InGaN barriers in multiple quantum well (MQW) LEDs, 20% enhancement in EQE was achieved due to improved hole injection without degrading the layer quality. Carrier diffusion length, an important physical parameter that directly affects the performance of optoelectronic devices, was measured in epitaxial GaN using PL spectroscopy. The obtained diffusion lengths at room

  19. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  20. [Meaning of becoming mother and son/daughter through massage].

    Science.gov (United States)

    Márquez Doren, Francisca; Lucchini Raies, Camila; Rivera Martínez, Soledad

    2014-06-01

    Revealing the experience of mothers when massaging their children to know the phenomenon in the context of a mother-child healthy development. This is a qualitative study with a phenomenological approach carried out with 11 women who massaged their children and answered the guiding question: What did the experience of massaging your child mean to you? The experience of massaging their children meant the development of their being a mother and of being a son/daughter, in addition to developing the attachment relationship between them. The massage can operationalize this integrality, become a tool of communication, stimulation and promotion of secure attachment, by promoting the loving interaction between mother and child. This practice should be considered as an option in the programs that promote the comprehensive health of the mother and child.

  1. Meaning of becoming mother and son/daughter through massage

    Directory of Open Access Journals (Sweden)

    Francisca Márquez Doren

    2014-06-01

    Full Text Available Objective: Revealing the experience of mothers when massaging their children to know the phenomenon in the context of a mother-child healthy development. Method: This is a qualitative study with a phenomenological approach carried out with 11 women who massaged their children and answered the guiding question: What did the experience of massaging your child mean to you? Results: The experience of massaging their children meant the development of their being a mother and of being a son/daughter, in addition to developing the attachment relationship between them. The massage can operationalize this integrality, become a tool of communication, stimulation and promotion of secure attachment, by promoting the loving interaction between mother and child. Conclusion: This practice should be considered as an option in the programs that promote the comprehensive health of the mother and child.

  2. Ethics of intergenerational (father-to-son) sperm donation.

    Science.gov (United States)

    Bredenoord, Annelien L; Lock, Matthias T W T; Broekmans, Frank J M

    2012-05-01

    In the ever changing field of reproductive medicine, clinics are regularly confronted with requests for novel variants of medically assisted reproduction. Particularly third-party (assisted) reproduction, which requires the involvement of an oocyte or sperm donor, is ethically and psychologically complex due to the parties involved, but nevertheless widely accepted. A particular type of third party reproduction concerns intrafamilial medically assisted reproduction (IMAR), where the donor is a family member of the recipients. In IMAR, some of the ethical and psychological issues associated with third party reproduction are intensified. The precise impact and consequences, however, remain speculative due to the lack of information regarding IMAR. Both the ESHRE Task Force on Ethics and Law and the Human Fertilization and Embryology Authority have recently highlighted the lack of information and the need for debate. In order to contribute to the discussion and knowledge on IMAR, we present a couple that recently visited our academic clinic with a request for a very particular variant of IMAR: first degree, intergenerational father-to-son sperm donation. As our academic hospital did not have experience with this variant of IMAR, our interdisciplinary Ethics Committee for Reproductive Medicine extensively discussed the request, resulting in an advisory report on the ethics of IMAR in general and father-to-son sperm donation in particular. Here, we will first present the andrological and social background of the couple and subsequently discuss the ethical considerations that led to the approval of their request. We will conclude the paper with recommendations for a morally sound practice of IMAR.

  3. Life test results of OLED-XL long-life devices for use in active matrix organic light emitting diode (AMOLED) displays for head mounted applications

    Science.gov (United States)

    Fellowes, David A.; Wood, Michael V.; Hastings, Arthur R., Jr.; Ghosh, Amalkumar P.; Prache, Olivier

    2007-04-01

    eMagin Corporation has recently developed long-life OLED-XL devices for use in their AMOLED microdisplays for head-worn applications. AMOLED displays have been known to exhibit high levels of performance with regards to contrast, response time, uniformity, and viewing angle, but a lifetime improvement has been perceived to be essential for broadening the applications of OLED's in the military and in the commercial market. The new OLED-XL devices gave the promise of improvements in usable lifetime over 6X what the standard full color, white, and green devices could provide. The US Army's RDECOM CERDEC NVESD performed life tests on several standard and OLED-XL panels from eMagin under a Cooperative Research and Development Agreement (CRADA). Displays were tested at room temperature, utilizing eMagin's Design Reference Kit driver, allowing computer controlled optimization, brightness adjustment, and manual temperature compensation. The OLED Usable Lifetime Model, developed under a previous NVESD/eMagin SPIE paper presented at DSS 2005, has been adjusted based on the findings of these tests. The result is a better understanding of the applicability of AMOLEDs in military and commercial head mounted systems: where good fits are made, and where further development might be needed.

  4. Temperature issues with white laser diodes, calculation and approach for new packages

    Science.gov (United States)

    Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

    2015-01-01

    Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

  5. Evaluation of SiC schottky diodes using pressure contacts

    OpenAIRE

    Ortiz Gonzalez, Jose; Alatise, Olayiwola; Aliyu, Attahir; Rajaguru, Pushparajah; Castellazzi, Alberto; Ran, Li; Mawby, Philip; Bailey, Chris

    2017-01-01

    The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristor- based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reve...

  6. Male-mediated infertility in sons of building painters and gardeners

    DEFF Research Database (Denmark)

    Ramlau-Hansen, Cecilia; Stoltenberg, Christian Ditlev G; Hougaard, K S

    2012-01-01

    To investigate whether sons of gardeners and building painters have increased risk of infertility in comparison with sons of bricklayers, carpenters and electricians.......To investigate whether sons of gardeners and building painters have increased risk of infertility in comparison with sons of bricklayers, carpenters and electricians....

  7. Few-photon optical diode

    CERN Document Server

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficiently than the opposite.

  8. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  9. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  10. Efficient generation of 3.9 W of diffraction-limited green light with spectrally combined tapered diode lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Andersen, Peter E.

    1060 nm tapered diode lasers, we achieve a 2.5-3.2 fold increase of green light with a maximum power of 3.9 Watts in a diffraction-limited beam. At this level, diode lasers have a high application potential, for example, within the biomedical field. In order to enhance the power even further, our...

  11. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

    KAUST Repository

    Shen, Chao

    2017-02-16

    III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the

  12. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

    Directory of Open Access Journals (Sweden)

    Meisam Rahmani

    2013-01-01

    Full Text Available Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking and metal (AA stacking layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

  13. Crossed-beam superluminescent diode.

    Science.gov (United States)

    Vaissié, Laurent; Smolski, Oleg V; Johnson, Eric G

    2005-07-01

    We investigate a novel surface-emitting superluminescent diode configuration that uses two detuned grating outcouplers to suppress lasing. This device exhibits a shaped beam with a peak power of 1.5 W quasi-continuous wave with an 11 nm bandwidth centered on 970 nm.

  14. Thermal-Diode Sandwich Panel

    Science.gov (United States)

    Basiulis, A.

    1986-01-01

    Thermal diode sandwich panel transfers heat in one direction, but when heat load reversed, switches off and acts as thermal insulator. Proposed to control temperature in spacecraft and in supersonic missiles to protect internal electronics. In combination with conventional heat pipes, used in solar panels and other heat-sensitive systems.

  15. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.;

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  16. Jean Alesi and his son Giuliano visited CERN

    CERN Multimedia

    Emma Jones

    2010-01-01

    Jean Alesi, former F1 racing driver, and his kids visited CERN on Monday 1st February 2010. The Bulletin and the Video productions team had the opportunity to meet him. The video interview is transcribed for your convenience. What attracted you to CERN, what was it that made you want to come? We talked at home with the children about places to see close to us, like CERN, where they are seeking to reproduce the origins of the world. These things are so far removed from what we ordinarily think and talk about, that they captured our imagination and made us want to come see for ourselves. We know that your son (Giuliano, 9 years) is interested in what is happening at CERN, so we'd like to ask him: how did he find out about it? Giuliano: I am very interested in the technologies used in laboratories, and the exploration of the Universe. Plus, I wanted to see some of the incredible machines. I enjoyed my visit a lot. I found out about CERN from my mother. She showed me a video that I really liked, so I wanted to...

  17. ¿Son las mujeres una minoría?

    Directory of Open Access Journals (Sweden)

    Osborne, Raquel

    1996-10-01

    Full Text Available Not available.

    El clásico tratamiento de las mujeres como minoría desde la sociología se halla contemporáneamente interrelacionado con las políticas de igualdad tejidas en torno a las mujeres. Pasado y presente, teoría y práctica se unen para mostrar que las teorías no son accidentales ni fortuitas sino que acarrean importantes consecuencias en la acción, pudiendo dar lugar a intervenciones en la vida pública, que es lo que, a mi entender, confiere su sentido a la. sociología y, en particular, a la sociología del género. El título alude a la existencia de un importante desarrollo en sociología de la temática de las minorías, que traemos a colación por cuanto desde muy temprano dicha ciencia refirió este tema a las mujeres, desarrollo que seguiremos en este artículo. La conceptualización de las mujeres como minoría se traducirá, en términos de políticas públicas, en lo que se conoce como medidas de acción o discriminación positiva impulsadas, en lo que a las mujeres atañe, por el movimiento feminista.

  18. ¿Las agencias son unidades administrativas especiales?

    Directory of Open Access Journals (Sweden)

    Consuelo Sarria

    2015-06-01

    Full Text Available Al plantearse como tema del artículo el de si las agencias son unidades administrativas especiales, el trabajo debe abordar dos conceptos aparentemente diferentes en cuanto al contenido y la génesis, pues de un lado se tiene conocimiento de las unidades administrativas especiales creadas con la finalidad de realizar actividades propias de un ministerio o departamento administrativo, y que, en consecuencia, siguiendo lineamientos jurisprudenciales, debían formar parte de la estructura de aquellos o estos. No obstante el reproche doctrinal referido a que a ciertas unidades administrativas se les otorgaba personería jurídica, llama la atención el cambio de criterio jurisprudencial que las avaló, y la manera en que a partir de la Constitución de 1991 se regularon unidades con o sin personería jurídica. Al abordar el tema de las agencias del Estado resulta relevante el origen anglosajón del término y la ausencia de características que las identifiquen, y la ausencia de un régimen común. Se hace especial mención a la reforma de 2011 y a cómo se crearon varias Agencias del Estado, algunas definidas como Unidades Administrativas Especiales, ante lo que cabe interrogarse sobre la correspondencia entre ambas nociones.

  19. Beam shaping design for compact and high-brightness fiber-coupled laser-diode system.

    Science.gov (United States)

    Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

    2015-06-20

    Fiber-coupled laser diodes have become essential sources for fiber laser pumping and direct energy applications. A compact and high-brightness fiber-coupled system has been designed based on a significant beam shaping method. The laser-diode stack consists of eight mini-bars and is effectively coupled into a standard 100 μm core diameter and NA=0.22 fiber. The simulative result indicates that the module will have an output power over 440 W. Using this technique, compactness and high-brightness production of a fiber-coupled laser-diode module is possible.

  20. Challenges of high power diode-pumped lasers for fusion energy

    Institute of Scientific and Technical Information of China (English)

    Bruno; Le; Garrec

    2014-01-01

    This paper reviews the different challenges that are encountered in the delivery of high power lasers as drivers for fusion energy.We will focus on diode-pumped solid-state lasers and we will highlight some of the main recent achievements when using ytterbium,cryogenic cooling and ceramic gain media.Apart from some existing fusion facilities and some military applications of diode-pumped solid-state lasers,we will show that diode-pumped solid-state lasers are scalable to inertial fusion energy(IFE)’s facility level and that the all-fiber laser scheme is very promising.

  1. The advances and characteristics of high-power diode laser materials processing

    Science.gov (United States)

    Li, Lin

    2000-10-01

    This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

  2. Principles of solar cells, LEDs and diodes the role of the PN junction

    CERN Document Server

    Kitai, Adrian

    2011-01-01

    The book will cover the two most important applications of semiconductor diodes - solar cells and LEDs - together with quantitative coverage of the physics of the PN junction at the senior undergraduate level. It will include: Review of semiconductor physicsIntroduction to PN diodesThe solar cellPhysics of efficient conversion of sunlight into electrical energySemiconductor solar cell materials and device physicsAdvanced solar cell materials and devicesThe light emitting diodePhysics of efficient conversion of electrical energy into lightSemiconductor li

  3. Structural and electrical properties of Ag grid/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) coatings for diode application through advanced printing technology.

    Science.gov (United States)

    Duraisamy, Navaneethan; Ponniah, Ganeshthangaraj; Jo, Jeongdai; Choi, Kyung-Hyun

    2013-08-01

    This paper is focused on printed techniques for the fabrication of hybrid structure of silver (Ag) grid/poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) (PEDOT:PSS) on polyethylene terepthalate (PET) as a flexible substrate. Ag grid has been printed on PET substrate by using gravure offset printing process, followed by PEDOT:PSS thin film deposition on Ag grid through electrohydrodynamic atomization (EHDA) technique. The important parameters for achieving uniform hybrid structure of Ag grid/PEDOT:PSS through printed techniques have been clearly discussed. Field emission scanning electron microscope studies revealed the uniformity of printed Ag grid with homogeneous deposition of PEDOT:PSS on Ag grid. The optical properties of Ag grid/PEDOT:PSS were measured by UV-visible spectroscopy, which showed nearly 80-82% of transparency in the visible region and it was nearly same as PEDOT:PSS thin film on PET substrate. Current-voltage (I-V) analysis of fabricated hybrid device by using printed Ag grid/PEDOT:PSS as a bottom electrode showed good rectifying behavior with possible interfacial mechanisms. Capacitance-voltage (C-V) analysis was carried over different frequencies. These results suggest that fabrication of hybrid structure through printed techniques will play a significant role in mass production of printed electronic devices for commercial application by using flexible substrate.

  4. Clinical application of a new 0.63- to 0.65-μm pulse diode laser in treating ear, throat, and nose diseases in adults and children

    Science.gov (United States)

    Nasedkin, Alexy N.; Pletnev, A. S.

    2001-04-01

    An investigation was made of applying a pulsed diode laser emitting at the wavelengths of 0.63 to 0.65 micrometers to treat various otolaryngological diseases, such as rhinosinusitis, acute rhinitis, vasomotor rhinitis, allergic rhinitis, the illness of the lymphoid ring, adenoiditis, chronic tonsillitis, pharyngitis, and catarrhal and suppurative otitis. The therapeutic effect produced by the pulsed diode laser was compared with that of conventional therapeutic lasers. It was found that the pulsed low-intensity laser radiation in the red spectrum region offered a number of advantages over conventional laser therapeutic techniques.

  5. Application of an InGaAsP diode laser to probe photodissociation dynamics - I(asterisk) quantum yields from n- and i-C3F7I and CH3I by laser gain vs absorption spectroscopy

    Science.gov (United States)

    Hess, W. P.; Kohler, S. J.; Haugen, H. K.; Leone, S. R.

    1986-01-01

    Initial measurements on I-asterisk yields of alkyl iodides at 266 nm are reported using gain vs. absorption spectroscopy with an InGaAsP diode probe laser. The results are 102 percent + or - 4 percent, 102 percent + or - 7 percent, and 73 percent + or - 4 percent for n-C3F7I, i-C3F7I, and CH3I respectively. Future prospects for the development of diode laser systems and for their use in dynamical studies are discussed.

  6. Radiolytic model of CN Cofrentes using BWRVIA: analysis of the effectiveness of mitigation in locations of the vessel with application of noble metal son-line; Modelo radiolitico de C. N: Cofrentes utilizando el BWRVIA: analisis de la efectividad de mitigacion en localizaciones de la vasija con aplicacion de metales nobles on-line

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Serrano Ledesma, C.; Sanchez Zapata, J. D.

    2012-07-01

    The effectiveness of mitigation is found from two chemical parameters: electrochemical potential (pm-a hydrogen injection) and Molar Ratio (for the application of noble metals). EPRI code exists, the BWRVIA (BWR Vessel Internals Application,) which enables setting model the impact radiolysis of water, the balance of liquid-vapor phase and recirculation have on the chemical variation of these parameters.

  7. ¿Son los MOOC una alternativa de aprendizaje?

    Directory of Open Access Journals (Sweden)

    Antonio Ramón Bartolomé Pina

    2015-01-01

    Full Text Available Este trabajo reflexiona sobre los MOOC como entornos de aprendizaje. El número de cursos masivos abiertos y en línea (MOOC ha crecido exponencialmente en pocos años desde que fueron introducidos. Los MOOC son considerados una nueva forma de entornos virtuales de aprendizaje potenciados por la tecnología. Se consideran dos tipos de MOOC: unos los organizados por Siemens y Downes (cMOOC y otros los desarrollados en lugares como Stanford, con muchos estudiantes y loables objetivos (xMOOC; estos tienen también sus debilidades. Aunque han sido recibidos con altas expectativas, también han encontrado una fuerte oposición que está aumentando con el tiempo, lo que nos permite estudiar este fenómeno en profundidad. Aunque todavía hay pocas investigaciones empíricas sobre los efectos de los MOOC en el aprendizaje, este estudio trata de arrojar luz sobre el tema desde un punto de vista teórico. En primer lugar exploraremos las expectativas positivas y negativas generadas. Los MOOC pueden constituir una buena propuesta a gran escala, lo que solo es posible para unas pocas grandes instituciones. No hay estudio de mercado, ni modelo de negocio, ni investigaciones empíricas que permitan confirmar los anuncios de sus efectos positivos. Revisaremos las teorías del aprendizaje recientes y clásicas respecto a su capacidad para explicar el proceso de aprendizaje y compararemos los cursos en línea tradicionales, los xMOOC y los cMOOC en relación a su potencial para apoyar el aprendizaje y su auto-regulación.

  8. Hope for the future: 3. Planning for sons.

    Science.gov (United States)

    Qutub, S A

    1995-01-01

    The Pakistan Institute for Environment-Developed Action Research (PIEDAR) has been active during 1992-95 in 25 rural villages of Kabirwala tahsil, Khanewal District, Punjab region, Pakistan. Participatory rural appraisal strategies are used to help communities understand the relationship between family size and sustainable land use patterns. The fertility rate in villages is over 6 children per woman. Over 9/10 women are familiar with the concept of family planning, 7/10 know of a specific method, but only 1/10 uses contraception. Religious taboos are but one reason for the gap between knowledge and use. 15% of couples report opposition by the husband or mother-in-law. A major determinant of large family size is attributed to problem of land security, which is prevalent throughout the province. About 50% of arable land is tied up in legal battles. The farms use a wheat-cotton cropping pattern, which relies on intensive labor inputs for peak periods. Many sons help families retain the land. The Village Organization was directed to focus on the land use problems of villages and to make recommendations. Action plans are developed with step by step implementation for every land parcel in order to increase productivity. Villagers working within this community organization experience how exchanges can be made to benefit each other. The structural organization of this emerging network is useful for cutting across social, traditional, and hierarchical structures to become a new foundation for economic relations. Traditional centers of power become useless to the economic functioning of the community, and more democratic forms of governance emerge. It has been argued that rural fertility is not influenced by tradition and irrationality but by socioeconomic necessity. If so, time will change reproductive trends; unfortunately, the process of social change is slow. Independent catalytic agents are needed for speeding up the process, while civil society needs the State to

  9. On the“Oedipus Complex”in Sons and Lovers-Mother is a lover of her son

    Institute of Scientific and Technical Information of China (English)

    王瑞瑒

    2014-01-01

    Sons and Lovers is one of Lawrence’s most famous novels. It mainly concerns about the love affairs among the main character-Paul, his mother and his two girlfriends. The mother’s strange love has affected the boys for a long time, which even has made him lose the ability to love other girls. As a result, Paul gradually has the“Oedipus Complex”towards his mother, and it has influenced the whole lifetime of himself. During the competition of grasp the heart of Paul, Miriam and Clara are all the los-ers, while they both can’t drag Paul out of the influence from his mother. It is not until the death of his mother does Paul finally escape from the control of his mother. All the origins can be concluded into one thing-that is the Paul’s“Oedipus Complex”towards his mother. What is the“Oedipus Complex”, and how does it reflect in the main content? How does it influence the emotions of Paul step by step? This essay will elaborate it in detail.

  10. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  11. Local mechanical stress relaxation of Gunn diodes irradiated by protons

    Science.gov (United States)

    Gradoboev, A. V.; Tesleva, E. P.

    2017-05-01

    The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)·102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.

  12. Applications of Liquid Chromatography with Fluorescence Detector Diodes and the Analysis of Environmental Pollutants; Aplicaciones de la Cromatografia Liquida con Detector de Diodos y Fluorescencia al Analisis de Contaminantes Medioambientales

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, S.; Perez, R. M.

    2012-04-11

    It presents a review on the determination of major types of organic pollutants in environmental samples by HPLC with diode array or fluorescence molecular detectors. Main objective has been to make a compilation of the analytical potential of the technique based on literature and our laboratory studies on the main aspects of analytical methodology used in the determination of these compounds. (Author) 53 refs.

  13. High power collimated diode laser stack

    Institute of Scientific and Technical Information of China (English)

    LIU Yuan-yuan; FANG Gao-zhan; MA Xiao-yu; LIU Su-ping; FENG Xiao-ming

    2006-01-01

    A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques.The module includes ten typical continuous wave (cw) bars and the total output power can be up to 368W at 48.6A.Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0.926 40 and 8.2060 respectively.The light emitting area is limited in a square area of 18.3 mm×11 mm.The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.

  14. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  15. Coupled Resonator Vertical Cavity Laser Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Chow, W.W.; Fischer, A.J.; Allerman, A.A.; Hou, H.Q.; Geib, K.M.

    1999-07-22

    For many applications, the device performance of edge emitting semiconductor lasers can be significantly improved through the use of multiple section devices. For example, cleaved coupled cavity (C3) lasers have been shown to provide single mode operation, wavelength tuning, high speed switching, as well as the generation of short pulses via mode-locking and Q-switching [1]. Using composite resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the coupling between the monolithic cavities, incorporate passive or active resonators which are spectrally degenerate or detuned, and to fabricate these devices in 2-dimensional arrays. Composite resonator vertical cavity lasers (CRVCL) have been examined using optical pumping and electrical injection [2-5]. We report on CRVCL diodes and show that efficient modulation of the laser emission can be achieved by either forward or reverse biasing the passive cavity within a CRVCL.

  16. Light-emitting diodes for analytical chemistry.

    Science.gov (United States)

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  17. Model for topological phononics and phonon diode

    Science.gov (United States)

    Liu, Yizhou; Xu, Yong; Zhang, Shou-Cheng; Duan, Wenhui

    2017-08-01

    The quantum anomalous Hall effect, an exotic topological state first theoretically predicted by Haldane and recently experimentally observed, has attracted enormous interest for low-power-consumption electronics. In this work, we derived a Schrödinger-like equation of phonons, where topology-related quantities, time-reversal symmetry, and its breaking can be naturally introduced similar to the process for electrons. Furthermore, we proposed a phononic analog of the Haldane model, which makes the novel quantum (anomalous) Hall-like phonon states characterized by one-way gapless edge modes immune to scattering. The topologically nontrivial phonon states are useful not only for conducting phonons without dissipation but also for designing highly efficient phononic devices, like an ideal phonon diode, which could find important applications in future phononics.

  18. Diode Pumped Fiber Laser

    Science.gov (United States)

    1983-07-01

    numerical aperture is assumed to be small, the fiber modes are taken to be of the LP-type, described for example by Marcuse (Reference 11). In an (x...Fort Washington, PA. 11. D. Marcuse in Theory of Dielectric Optical Waveguides, Quantum Electronics, Principles and Applications, (Academic...10, 2252-2258, October 1971. 17. D. Marcuse , "Gaussian approximation of the fundamental modes of graded- index fibers," J. Opt. Soc. Am., Vol

  19. Tunable diode laser spectroscopy as a technique for combustion diagnostics

    Science.gov (United States)

    Bolshov, M. A.; Kuritsyn, Yu. A.; Romanovskii, Yu. V.

    2015-04-01

    Tunable diode laser absorption spectroscopy (TDLAS) has become a proven method of rapid gas diagnostics. In the present review an overview of the state of the art of TDL-based sensors and their applications for measurements of temperature, pressure, and species concentrations of gas components in harsh environments is given. In particular, the contemporary tunable diode laser systems, various methods of absorption detection (direct absorption measurements, wavelength modulation based phase sensitive detection), and relevant algorithms for data processing that improve accuracy and accelerate the diagnostics cycle are discussed in detail. The paper demonstrates how the recent developments of these methods and algorithms made it possible to extend the functionality of TDLAS in the tomographic imaging of combustion processes. Some prominent examples of applications of TDL-based sensors in a wide range of practical combustion aggregates, including scramjet engines and facilities, internal combustion engines, pulse detonation combustors, and coal gasifiers, are given in the final part of the review.

  20. Spectral narrowing of a 980 nm tapered diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Gaëlle

    2011-01-01

    High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope...... in wavelength specific applications and hence, it is vital to stabilize the emission spectrum of these devices. In our experiment, we describe the wavelength narrowing of a 12 element 980 nm tapered diode laser bar using a simple Littman configuration. The tapered laser bar which suffered from a big smile has...... been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order...

  1. Dessiner son parcours professionnel, pour en tirer des enseignements

    Directory of Open Access Journals (Sweden)

    Pascale Corten-Gualtieri

    2011-02-01

    Full Text Available Dans le cadre de la formation continue pour des enseignants du supérieur, une activité d’expression visuelle a soutenu une posture réflexive à propos du développement professionnel de chacun. Il a été demandé aux enseignants de dessiner leur parcours professionnel en le comparant à un parcours routier. Ce dessin a ensuite servi de support aux enseignants pour dégager les leviers et les freins de leur développement professionnel, puis pour clarifier leur(s perspective(s d’évolution professionnelle. Cadrage théorique et échanges en binômes ont enrichi ce regard distancié. L’ensemble de ces activités constitue une préparation efficace et motivante à la rédaction d’un portfolio dans lequel l’enseignant analyse ses pratiques et son développement professionnels. Cet article décrit le cadre théorique et les modalités de cet ensemble d’activités ; il analyse ensuite les résultats obtenus, essentiellement à partir de l’étude du corpus de dessins réalisés par les enseignants, et d’une enquête d’évaluation réalisée auprès de ceux-ci.A recent visual creative activity carried out during a continuous education programme for teachers in higher education enhances reflective practice regarding professional development. Teachers were asked to draw their professional path as they would draw a route map. On the basis of this drawing, they were able to highlight the levers and obstacles in their professional development and then clarify their perspectives in terms of professional growth. This analysis was emphasized using a theoretical framework and exchanges in teams of two. All activities comprised an effective and stimulating preparation for writing a portfolio in which the teachers analyzed their professional practices and development. This article describes the theoretical framework and methods used during these activities; it then analyzes the results obtained based on the study of the various drawings made

  2. Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

    Science.gov (United States)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

    1996-01-01

    Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

  3. Le corpus ANCOR_Centre et son outil de requêtage : application à l’étude de l’accord en genre et nombre dans les coréférences et anaphores en français parlé

    Directory of Open Access Journals (Sweden)

    Lefeuvre Anais

    2014-07-01

    Full Text Available Cet article présente les premières études de corpus réalisés sur ANCOR_Centre, un nouveau corpus de français parlé annoté en relations de coréférence ou anaphoriques. Par sa taille (488 000 mots, 100 000 mentions, 50000 relations, ce corpus est sans équivalent sur le français et soutient la comparaison avec les plus grands corpus de coréférence existant sur d’autres langues. Dans un premier temps, nous détaillons la réalisation de cette ressource qui est diffusée librement sous licence Creative Commons. Puis nous présentons l’outil de requêtage associé au corpus, qui offre à la communauté des sciences du langage des capacités d’analyse exhaustives et précises du corpus, autant pour des études quantitatives que qualitatives (concordancier. Cet outil a été utilisé pour décrire quantitativement le contenu du corpus ANCOR, ce qui fait l’objet de la troisième partie de l’article. Enfin, nous présentons une étude originale basée là encore sur l’analyse par requête du corpus, qui montre qu’en français parlé, l’hypothèse d’accord systématique en genre et nombre entre la coréférence et son antécédent est loin d’être assurée

  4. Data and Analysis Methods of the Son-O-Mermaid and MERMAID Experiments

    Science.gov (United States)

    Simon, J. D.; Simons, F. J.; Nolet, G.

    2014-12-01

    Here we present, for the first time, the results from pilot deployments of the Son-O-Mermaid project, an autonomously drifting, oceangoing data-collection platform that can be cheaply deployed without the need for a costly research vessel, and that records and transmits hydroacoustic signals (with a target of those generated by teleseismic earthquakes) in near real-time. Both deployments employ three identical hydrophones spaced about 70 cm apart at the end of a 700 m long cable attached to a surface buoy that houses electronics, communications, and a GPS location package. The maiden voyage occurred October 8, 2012, in Exuma Bay, Bahamas and returned 25 hours of acoustic data. A second deployment is to take place in September 2014, with near-immediate data relay via Iridium modem. The experimental setup is different from the MERMAID instrument, which sinks to a midcolumn depth and surfaces to transmit waveforms when an event detection algorithm is triggered. MERMAIDs have recorded hundreds of seismic traces from 18 active floats in the Indian and Mediterranean Oceans with a signal-to-noise ratio suitable for global tomography. As with earthquake early-warning studies, both Son-O-Mermaid and MERMAID benefit from rapid and accurate event detection, discrimination, and measurement technology. With this triple purpose in mind we continue to improve methods (in the time-domain, via spectrogram analysis and using wavelets) that we illustrate on the latest and some of the older data, as well. While hydroacoustic data have numerous other applications beyond seismology (whale calls, ice calving, weather patterns, and so on) the Son-O-Mermaid and MERMAID instruments may potentially revolutionize seismic data collection in the oceans. Moreover, in the near future they will be fitted with more or different instruments, becoming multipurpose and multidisciplinary platforms for all types of scientific research in and of the oceans. In seismology we envision a future when the

  5. Quantum Noise in Laser Diodes

    Science.gov (United States)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  6. Megahertz organic/polymer diodes

    Science.gov (United States)

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  7. Diode lasers: A magical wand to an orthodontic practice

    Directory of Open Access Journals (Sweden)

    Vipul Kumar Srivastava

    2014-01-01

    Full Text Available LASER (Light Amplification by Stimulated Emission of Radiation is a powerful source of light, which has innumerable applications in all the fields of science including medicine and dentistry. It is one such technology that has become a desirable and an inseparable alternative to many traditional surgical procedures being held in the field of dentistry, and orthodontics is no exception. The current article describes the uses of a diode laser as an indispensable tool in an orthodontic office.

  8. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  9. Mothers' Predictions of Their Son's Executive Functioning Skills: Relations to Child Behavior Problems

    Science.gov (United States)

    Johnston, Charlotte

    2011-01-01

    This study examined mothers' ability to accurately predict their sons' performance on executive functioning tasks in relation to the child's behavior problems. One-hundred thirteen mothers and their 4-7 year old sons participated. From behind a one-way mirror, mothers watched their sons perform tasks assessing inhibition and planning skills.…

  10. Mothers' Predictions of Their Son's Executive Functioning Skills: Relations to Child Behavior Problems

    Science.gov (United States)

    Johnston, Charlotte

    2011-01-01

    This study examined mothers' ability to accurately predict their sons' performance on executive functioning tasks in relation to the child's behavior problems. One-hundred thirteen mothers and their 4-7 year old sons participated. From behind a one-way mirror, mothers watched their sons perform tasks assessing inhibition and planning skills.…

  11. New discoveries of old SON: a link between RNA splicing and cancer.

    Science.gov (United States)

    Hickey, Christopher J; Kim, Jung-Hyun; Ahn, Eun-Young Erin

    2014-02-01

    The SON protein is a ubiquitously expressed DNA- and RNA-binding protein primarily localized to nuclear speckles. Although several early studies implicated SON in DNA-binding, tumorigenesis and apoptosis, functional significance of this protein had not been recognized until recent studies discovered SON as a novel RNA splicing co-factor. During constitutive RNA splicing, SON ensures efficient intron removal from the transcripts containing suboptimal splice sites. Importantly, SON-mediated splicing is required for proper processing of selective transcripts related to cell cycle, microtubules, centrosome maintenance, and genome stability. Moreover, SON regulates alternative splicing of RNAs from the genes involved in apoptosis and epigenetic modification. In addition to the role in RNA splicing, SON has an ability to suppress transcriptional activation at certain promoter/enhancer DNA sequences. Considering the multiple SON target genes which are directly involved in cell proliferation, genome stability and chromatin modifications, SON is an emerging player in gene regulation during cancer development and progression. Here, we summarize available information from several early studies on SON, and highlight recent discoveries describing molecular mechanisms of SON-mediated gene regulation. We propose that our future effort on better understanding of diverse SON functions would reveal novel targets for cancer therapy.

  12. The Power of a Single Mother: The Influence of Black Women on Their Sons' Academic Performance

    Science.gov (United States)

    Robinson, Quintin L.; Werblow, Jacob

    2013-01-01

    This study examines the ways single Black mothers contribute to the educational success of their 11th-grade sons, despite the fact that their sons are enrolled in "failing schools." Data from five interviews and one focus group reveal common characteristics of how single-Black mothers help their sons beat the odds.

  13. High power coherent polarization locked laser diode.

    Science.gov (United States)

    Purnawirman; Phua, P B

    2011-03-14

    We have coherently combined a broad area laser diode array to obtain high power single-lobed output by using coherent polarization locking. The single-lobed coherent beam is achieved by spatially combining four diode emitters using walk-off crystals and waveplates while their phases are passively locked via polarization discrimination. While our previous work focused on coherent polarization locking of diode in Gaussian beams, we demonstrate in this paper, the feasibility of the same polarization discrimination for locking multimode beams from broad area diode lasers. The resonator is designed to mitigate the loss from smile effect by using retro-reflection feedback in the cavity. In a 980 nm diode array, we produced 7.2 W coherent output with M2 of 1.5x11.5. The brightness of the diode is improved by more than an order of magnitude.

  14. Luminescence and advanced mass spectroscopic characterization of sodium zinc orthophosphate phosphor for low-cost light-emitting diodes.

    Science.gov (United States)

    Mishra, Savvi; Swati, G; Rajesh, B; Tyagi, Kriti; Gahtori, Bhasker; Sivaiah, B; Vijayan, N; Dalai, M K; Dhar, A; Auluck, S; Jayasimhadri, M; Haranath, D

    2016-03-01

    A new rare-earth-free NaZnPO4:Mn(2+) (NZP:Mn) phosphor powder has been developed by our group and investigated meticulously for the first time using secondary ion mass spectroscopy and chemical imaging techniques. The studies confirmed the effective incorporation of Mn(2+) into the host lattice, resulting in an enhancement of photoluminescence intensity. Phase purity has been verified and structure parameters have been determined successfully by Rietveld refinement studies. The NZP:Mn phosphor powder exhibits strong absorption bands in the ultraviolet and visible (300-470 nm) regions with a significant broad yellow-green (~543 nm) emission due to the characteristic spin forbidden d-d transition ((4)T1→(6)A1) of Mn(2+) ions, indicating weak crystal field strength at the zinc-replaced manganese site. The decay constants are a few milliseconds, which is a pre-requisite for applications in many display devices. The results obtained suggest that this new phosphor powder will find many interesting applications in semiconductor physics, as cost-effective light-emitting diodes (LEDs), as solar cells and in photo-physics. Copyright © 2015 John Wiley & Sons, Ltd.

  15. Laser welding of polymers using high-power diode lasers

    Science.gov (United States)

    Bachmann, Friedrich G.; Russek, Ulrich A.

    2003-09-01

    Laser welding of polymers using high power diode lasers offers specific process advantages over conventional technologies, such as short process times while providing optically and qualitatively valuable weld seams, contactless yielding of the joining energy, absence of process induced vibrations, imposing minimal thermal stress and avoiding particle generation. Furthermore this method exhibits high integration capabilities and automatization potential. Moreover, because of the current favorable cost development within the high power diode laser market laser welding of polymers has become more and more an industrially accepted joining method. This novel technology permits both, reliable high quality joining of mechanically and electronically highly sensitive micro components and hermetic sealing of macro components. There are different welding strategies available, which are adaptable to the current application. Within the frame of this discourse scientific and also application oriented results concerning laser transmission welding of polymers using preferably diode lasers are presented. Besides the used laser systems the fundamental process strategies as well as decisive process parameters are illustrated. The importance of optical, thermal and mechanical properties is discussed. Applications at real technical components will be presented, demonstrating the industrial implementation capability and the advantages of a novel technology.

  16. In-volume heating using high-power laser diodes

    Science.gov (United States)

    Denisenkov, Valentin S.; Kiyko, Vadim V.; Vdovin, Gleb V.

    2015-03-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heating with different approaches to make the heat distribution more uniform and the process more efficient. High-power lasers can in theory provide in-bulk heating which can sufficiently increase the uniformity of heat distribution thus making the process more efficient. We chose two media (vegetable fat and glucose) for feasibility experiments. First, we checked if the media have necessary absorption coefficients on the wavelengths of commercially available laser diodes (940-980 nm). This was done using spectrophotometer at 700-1100 nm which provided the dependences of transmission from the wavelength. The results indicate that vegetable fat has noticeable transmission dip around 925 nm and glucose has sufficient dip at 990 nm. Then, after the feasibility check, we did numerical simulation of the heat distribution in bulk using finite elements method. Based on the results, optimal laser wavelength and illuminator configuration were selected. Finally, we carried out several pilot experiments with high-power diodes heating the chosen media.

  17. Un outil de prise de données sur une image numérisée et son utilité dans les études relatives aux poissons : exemple d'une application concrète en morphométrie

    Directory of Open Access Journals (Sweden)

    SAGNES P.

    1995-04-01

    Full Text Available Une configuration informatique polyvalente en analyse d'images est présentée. L'accent est mis sur une application morphométrique par l'intermédiaire d'un exemple concret chez les poissons, d'où ressortent les principales qualités du dispositif, soit la précision et la rapidité de collecte et de stockage des données. Des applications possibles de cet outil à des domaines d'étude précis sont également suggérées.

  18. Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    FENG Lie-Feng; LI Yang; LI Ding; WANG Cun-Da; ZHANG Guo-Yi; YAO Dong-Sheng; LIU Wei-Fang; XING Peng-Fei

    2011-01-01

    Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup.With increasing frequency of the ac signal,the relative light intensity (RLI) clearly decreases.Furthermore,a peculiar asynchrony between the RLI and ac small-signal is observed.At frequencies higher than 10kHz,the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency.Using the classical recombination model of light-emitting diodes under ac small-signal modulation,these abnormal characteristics of modulated EL can be clearly explained.High-power light-emitting diodes (LEDs) have received great attention recently owing to their applications in energy-saving lights,display items and many other fields;therefore,the optical and electrical characteristics of LEDs at forward bias hold significant potential for research.[1-4] However,for a new kind of light emission device,the general research on its performance focuses on the light emission and dc currentvoltage (I-V) characteristics.%Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup. With increasing frequency of the ac signal, the relative light intensity (RLI) clearly decreases. Furthermore, a peculiar asynchrony between the RLI and ac small-signal is observed. At frequencies higher than 10kHz, the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency. Using the classical recombination model of light-emitting diodes under ac small-signal modulation, these abnormal characteristics of modulated EL can be clearly explained.

  19. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  20. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  1. 小分子有机电致发光器件和材料的研究及应用%Development of Devices and Materials for Small Molecular Organic Light-emitting Diodes and Hurdles for Applications

    Institute of Scientific and Technical Information of China (English)

    密保秀; 王海珊; 高志强; 王旭鹏; 陈润锋; 黄维

    2011-01-01

    Organic light-emitting diodes (OLEDs) are electrical driven devices which contain organic materials as emitting media.OLEDs have attracted attention widely in modern science and technology, due to their good features of high brightness, quick response, large viewing angle, simple manufacture process, and flexibility,etc.Currently, OLEDs have stridden forward to commercialization in its application field, such as flat panel display (FPD) and solid state lighting (SSL).Although small-size FPD products based on OLED have been in the markets, and prototype products in large dimensions also have come to true, there still exist challenges and hurdles.In this paper, we review the progress in OLED research of devices and materials, as well as OLED applications.Firstly, devices with different structures, such as host emitter based- and dopant emitter based devices, single-, double-, triple- and multilayer devices, as well as white 0LED device are discussed, focusing on their working principles, corresponding device features and mechanism differences among them.Secondly, after introducing the strategies for OLED material research, different types of materials including hole transport materials, electron transport materials, various color emitters, and surface modification materials, are summarized,with their performance in OLED presented.Finally, the current challenges for applications are highlighted, and the focus of future research and development are proposed.%有机电致发光器件(OLED)是在电场作用下,以有机材料为活性发光层的器件.由于OLED具有亮度高、响应快、视角宽、工艺简单、可柔性等优点,在现代科学研究及技术应用中备受关注.其商业化应用,诸如平板显示(FPD)和固体照明(SSL)等,正在不断向前推进.本文综述了小分子OLED的各种器件结构和功能材料研究进展以及该领域存在的问题和挑战.在器件结构方面,着重介绍了每种器件的结构及相关工作原理

  2. Effects of radiation on laser diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  3. Fiber-distributed multi-channel open-path H2S sensor based on tunable diode laser absorption spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Dong Chen; Wenqing Liu; Yujun Zhang; Jianguo Liu; Ruifeng Kan; Min Wang; Xi Fang; Yiben Cui

    2007-01-01

    Tunable diode laser based gas detectors are now being used in a wide variety of applications for safety and environmental interest. A fiber-distributed multi-channel open-path H2S sensor based on tunable diode laser absorption spectroscopy (TDLAS) is developed, the laser used is a telecommunication near infrared distributed feed-back (DFB) tunable diode laser, combining with wavelength modulation specby combining optical fiber technique. An on-board reference cell provides on-line sensor calibration and almost maintenance-free operation. The sensor is suitable for large area field H2S monitoring application.

  4. SON68 glass dissolution driven by magnesium silicate precipitation

    Science.gov (United States)

    Fleury, Benjamin; Godon, Nicole; Ayral, André; Gin, Stéphane

    2013-11-01

    Experimental results are reported on the effect of magnesium silicate precipitation on the mechanisms and rate of borosilicate glass dissolution. Leaching experiments with SON68 glass, a borosilicate containing no Mg, were carried out in initially deionized water at 50 °C with a glass-surface-area-to-solution-volume ratio of 20,000 m-1. After 29 days of alteration the experimental conditions were modified by the addition of Mg to trigger the precipitation of Mg-silicate. Additional experiments were conducted to investigate the importance of other parameters such as pH or dissolved silica on the mechanisms of precipitation of Mg-silicates and their consequences on the glass dissolution rate. Mg-silicates precipitate immediately after Mg is added. The amount of altered glass increases with the quantity of added Mg, and is smaller when silicon is added in solution. A time lag is observed between the addition of magnesium and the resumption of glass alteration because silicon is first provided by partial dissolution of the previously formed alteration gel. It is shown that nucleation does not limit Mg-silicate precipitation. A pH above 8 is necessary for the phase to precipitate under the investigated experimental conditions. On the other hand the glass alteration kinetics limits the precipitation if the magnesium is supplied in solution at a non-limiting rate. The concentration of i in solution was analyzed as well as that of boron. The quantity of i released from the glass is estimated with the assumption that i and B are released congruently at the glass dissolution front. The remained quantity of the element i is then supposed to be in the gel or in the secondary phase. In this paper, we do not make a difference between gel and hydrated glass using the same word 'gel' whereas Gin et al. [40] makes this difference. Recent papers [40,41] discussed about different key issues related to the passivation properties of the alteration layer including the hydrated glass

  5. Comment on ``Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes'' [J. Appl. Phys. 97, 043709 (2005)

    Science.gov (United States)

    Dash, G. N.

    2005-11-01

    The avalanche noise behavior of impact avalanche transit-time (IMPATT) diodes has been modeled by Reklaitis and Reggiani [J. Appl. Phys. 97, 043709 (2005)]. They have obtained general agreement of their results with those of McIntyre [IEEE Trans. Electron Devices ED-13, 164 (1966)]. However, McIntyre's theory predicts the opposite noise behavior from that observed in the IMPATT diode. Hence the applicability of the noise model of Reklaitis and Reggiani to IMPATT diode is questionable.

  6. De Novo Truncating Variants in SON Cause Intellectual Disability, Congenital Malformations, and Failure to Thrive.

    Science.gov (United States)

    Tokita, Mari J; Braxton, Alicia A; Shao, Yunru; Lewis, Andrea M; Vincent, Marie; Küry, Sébastien; Besnard, Thomas; Isidor, Bertrand; Latypova, Xénia; Bézieau, Stéphane; Liu, Pengfei; Motter, Connie S; Melver, Catherine Ward; Robin, Nathaniel H; Infante, Elena M; McGuire, Marianne; El-Gharbawy, Areeg; Littlejohn, Rebecca O; McLean, Scott D; Bi, Weimin; Bacino, Carlos A; Lalani, Seema R; Scott, Daryl A; Eng, Christine M; Yang, Yaping; Schaaf, Christian P; Walkiewicz, Magdalena A

    2016-09-01

    SON is a key component of the spliceosomal complex and a critical mediator of constitutive and alternative splicing. Additionally, SON has been shown to influence cell-cycle progression, genomic integrity, and maintenance of pluripotency in stem cell populations. The clear functional relevance of SON in coordinating essential cellular processes and its presence in diverse human tissues suggests that intact SON might be crucial for normal growth and development. However, the phenotypic effects of deleterious germline variants in SON have not been clearly defined. Herein, we describe seven unrelated individuals with de novo variants in SON and propose that deleterious variants in SON are associated with a severe multisystem disorder characterized by developmental delay, persistent feeding difficulties, and congenital malformations, including brain anomalies.

  7. Modélisation électrothermique, commande et dimensionnement d’un système de stockage d’énergie par supercondensateurs avec prise en compte de son vieillissement : application à la récupération de l’énergie de freinage d’un trolleybus

    OpenAIRE

    HIJAZI, Alaa

    2010-01-01

    The studies presented in this thesis concern the thermal modeling, sizing and control of a stack composed of supercapacitors and DC/DC converter that feeds the auxiliaries or traction motors of the trolleybus in the case of electrical microcuts. In the first part, we were interested in the sizing of the storage system for an application concerning the recovering braking energy of a trolleybus. Direct and inverse models of the kinematic chain were studied in order to define a design strategy b...

  8. In vitro study of 960 nm high power diode laser applications in dental enamel, aided by the presence of a photoinitiator dye: scanning electron microscopy analysis; Estudo in vitro das aplicacoes do laser de diodo de alta potencia 960 nm em esmalte dentario, assistido por um fotoiniciador: analise de microscopia eletronica de varredura

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Marcelo Vinicius de

    2002-06-15

    The objective of this study is to verify if a high power diode laser can effectively modify the morphology of an enamel surface, and if this can be done in a controlled fashion by changing the lasers parameters. Previous studies using SEM demonstrated that through irradiation with Nd:YAG laser (1064 nm) it is possible to modify the morphology of the dental surface in such way as to increase its resistance against caries decays. The desired procedures that should achieve a decrease of the index of caries decays and of its sequels are on a primary level, which means that action is necessary before the disease installs itself. In this study it was used for the first time a prototype of a high power diode laser operating at 960 nm, produced by the Laboratory of Development of Lasers of the Center for Lasers and Applications of the IPEN. This equipment can present several advantages as reliability, reduced size and low cost. The aim was establish parameters of laser irradiation that produce the desired effects wanted in the enamel and protocols that guarantee its safety during application in dental hard tissues, protecting it of heating effects such as fissures and carbonization. (author)

  9. Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

    Science.gov (United States)

    Nihei, Shinichi; Sato, Eiichi; Hamaya, Tatsuki; Numahata, Wataru; Kogita, Hayato; Kami, Syouta; Arakawa, Yumeka; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

    2014-12-01

    To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current-voltage (I-V) amplifier, a voltage-voltage (V-V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I-V and V-V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu2(SiO4)O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)-Si-PIN, and an LSO-Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)-Si-PIN and the LSO-Si-PIN at the measurement conditions.

  10. Silicon Carbide Diodes Performance Characterization at High Temperatures

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

    2004-01-01

    NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

  11. High power diode lasers for solid-state laser pumps

    Science.gov (United States)

    Linden, Kurt J.; McDonnell, Patrick N.

    1994-02-01

    The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

  12. Organic light-emitting diodes from homoleptic square planar complexes

    Science.gov (United States)

    Omary, Mohammad A

    2013-11-12

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  13. Laser diode self-mixing technique for liquid velocimetry

    Science.gov (United States)

    Alexandrova, A.; Welsch, C. P.

    2016-09-01

    Using the self-mixing technique, or optical feedback interferometry, fluid velocity measurements of water seeded with titanium dioxide have been performed using a laser diode to measure the effect of the seeding particle concentration and also the pump speed of the flow. The velocimeter utilises commercially available laser diodes with a built-in photodiode for detection of the self-mixing effect. The device has demonstrated an accuracy better than 10% for liquid flow velocities up to 1.5 m/s with a concentration of scattering particles in the range of 0.8-0.03%. This is an improvement of one order of magnitude compared to previous experiments. The proposed velocimeter is to be developed further for application in gas-jet measurements.

  14. Laser diode self-mixing technique for liquid velocimetry

    Energy Technology Data Exchange (ETDEWEB)

    Alexandrova, A., E-mail: a.alexandrova@liverpool.ac.uk [Cockcroft Institute, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); University of Liverpool, Department of Physics, Liverpool L69 7ZE (United Kingdom); Welsch, C.P. [Cockcroft Institute, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); University of Liverpool, Department of Physics, Liverpool L69 7ZE (United Kingdom)

    2016-09-11

    Using the self-mixing technique, or optical feedback interferometry, fluid velocity measurements of water seeded with titanium dioxide have been performed using a laser diode to measure the effect of the seeding particle concentration and also the pump speed of the flow. The velocimeter utilises commercially available laser diodes with a built-in photodiode for detection of the self-mixing effect. The device has demonstrated an accuracy better than 10% for liquid flow velocities up to 1.5 m/s with a concentration of scattering particles in the range of 0.8–0.03%. This is an improvement of one order of magnitude compared to previous experiments. The proposed velocimeter is to be developed further for application in gas-jet measurements.

  15. Optical components for tailoring beam properties of multi-kW diode lasers

    Science.gov (United States)

    Könning, Tobias; Köhler, Bernd; Wolf, Paul; Bayer, Andreas; Hubrich, Ralf; Bodem, Christian; Plappert, Nora; Kindervater, Tobias; Faßbender, Wilhelm; Dürsch, Sascha; Küster, Matthias; Biesenbach, Jens

    2017-02-01

    One important aspect for the increasing use of diode lasers in industrial applications is the flexibility of diode lasers to tailor the beam properties to the specific needs demanded from the application. For fiber coupled solutions beam shaping with appropriate micro-optical elements is used for efficient fiber coupling of the highly asymmetric diode laser beam, whereas for direct applications optical elements are used to generate specific intensity distributions, like homogenized lines, areas and rings. Applications with diode lasers like solid state laser pump sources often require tailored spectral characteristics with narrow bandwidth, which is realized by using volume Bragg gratings for wavelength stabilization. In this paper we will summarize several concepts for adapting beam properties of diode lasers by using specific optical components. For building very compact laser modules of up to 2 kW we already presented a concept based on beam shaping of high fill factor bars. In this paper we will focus on further tailoring the beam properties of these very compact laser modules in the wavelength range from 808 nm up to 1020 nm. Fiber coupling of such modules into an 800 μm NA0.22 fiber yielded 1.6 kW without using polarization coupling. Another example is the generation of a 2.5 kW homogenized line with 40 mm length and a width of 4 mm.

  16. P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment

    Science.gov (United States)

    Chand, R.; Esashi, M.; Tanaka, S.

    2014-04-01

    This paper reports the high temperature test results of SiC p-n junction diode up to 873 K. No significant change in diode series resistance (Rs) and a diode ideality factor of 1.02 were confirmed in air. We used the 4H-SiC diode which had a contact pad area of 300 μm × 300 μm and a junction area of 220 μm × 220 μm. Ohmic contact on both p and n (i.e. front and back) sides were made by Ni, because nickel silicide (NiSi) provides good ohmic contact for high temperature applications. The electrical contact pads of the SiC diode were made by sputter-depositing Ni or Pt on the NiSi ohmic contact. High temperature aging tests at 673 K, 773 K and 873 K were carried out in air, and the forward current-voltage (I-V) characteristics of the SiC diodes were measured at different time intervals to observe change in the junction and series resistance. Stable p-n junction characteristic and constant series resistance were confirmed for the Pt-metalized diodes at 673 K, 773 K and 873 K. However, the Ni-metallized diodes showed marginal increase in series resistance due to the oxidation of Ni metal contacts.

  17. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  18. Temperature dependence of commercially available diode detectors.

    Science.gov (United States)

    Saini, Amarjit S; Zhu, Timothy C

    2002-04-01

    Temperature dependence of commercially available n- and p-type diodes were studied experimentally under both high instantaneous dose rate (pulsed) and low dose rate (continuous) radiation. The sensitivity versus temperature was measured at SSD = 80 or 100 cm, 10 x 10 cm2, and 5 cm depth in a 30 x 30 x 30 cm3 water phantom between 10 degrees C and 35 degrees C. The response was linear for all the diode detectors. The temperature coefficient (or sensitivity variation with temperature, svwt) was dose rate independent for preirradiated diodes. They were (0.30 +/- 0.01)%/degrees C, (0.36 +/- 0.03)%/degrees C, and (0.29 +/- 0.08)%/degrees C for QED p-type, EDP p-type, and Isorad n-type diodes, respectively. The temperature coefficient for unirradiated n-type diodes was different under low dose rate [(0.16 to 0.45)%/degrees C, continuous, cobalt] and high instantaneous dose rate [(0.07 +/- 0.02)%/degrees C, pulsed radiation]. Moreover, the temperature coefficient varies among individual diodes. Similarly, the temperature coefficient for a special unirradiated QED p-type diode was different under low dose rate (0.34%/degrees C, cobalt) and high instantaneous dose rate [(0.26 +/- 0.01)%/degrees C, pulsed radiation]. Sufficient preirradiation can eliminate dose rate dependence of the temperature coefficient. On the contrary, preirradiation cannot eliminate dose rate dependence of the diode sensitivity itself.

  19. Electromagnetic wave analogue of electronic diode

    CERN Document Server

    Shadrivov, Ilya V; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinary strong nonlinear wave propagation effect in the same way as electronic diode function is provided by a nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differing by a factor of 65.

  20. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  1. Recent Advances in Organic Light-Emitting Diodes for Flexible Applications%柔性有机发光二极管材料与器件研究进展

    Institute of Scientific and Technical Information of China (English)

    李琛; 黄根茂; 段炼; 邱勇

    2016-01-01

    Organic light-emitting diodes ( OLEDs) are solid state light emitting devices. They have broad prospects in the field of wearable devices owing to their flexibility nature, low driving voltage and low power consumption. Small to medium size OLED displays have already been commercialized. Large OLED TVs and OLED lightings have also emerged in real ap-plications. We review the most focused issues as well as the main progress in the field of flexible OLED technology in the recent years. The developing trends of flexible substrate material, flexible thin film transistor material, flexible OLED emit-ting layer and flexible thin film encapsulation layer are summarized. We also introduce some emerging flexible device fabri-cation technologies, such as flexible fabric substrate, polymer fibre based light emitting cell, the symmetric panel stacking device structure and slot-die coating technology. Lastly, we look to the prospect of the flexible OLED materials and devices technology.%有机发光二极管( Organic Light Emitting Diodes,简称OLED)是全固态的薄膜发光器件。由于OLED的可柔性制备、低驱动电压、低功耗等优点,其在未来的可穿戴应用上具有广阔的发展前景。目前,小尺寸的OLED显示器已经实现商业化,大尺寸的OLED电视和照明也已有产品问世,但OLED器件的可穿戴应用尚处于探索期。综述了近年来基于可穿戴应用的柔性OLED材料及器件技术的研究进展,具体介绍了柔性基板材料、柔性薄膜晶体管材料、柔性OLED发光层技术、柔性薄膜封装材料与技术等方面的研究进展。此外,介绍了近几年来兴起的一些新型的柔性器件制备技术,如柔性纤维布基底技术、纤维状聚合物发光电化学池技术、对称平面层器件结构和狭缝涂布式印刷技术等。最后,对柔性OLED材料与器件技术的发展趋势进行了展望。

  2. Maternal pre-pregnancy body mass index and pubertal development among sons

    DEFF Research Database (Denmark)

    Hounsgaard, M L; Håkonsen, L B; Vested, A

    2013-01-01

    Maternal overweight and obesity in pregnancy has been associated with earlier age of menarche in daughters as well as reduced semen quality in sons. We aimed at investigating pubertal development in sons born by mothers with a high body mass index (BMI). The study included 2522 sons of mothers...... that during pregnancy in 1984-1987 were enrolled in a mother-child cohort and gave information on their pre-pregnancy height and weight from which we calculated their BMI. Information on sons' pubertal development, assessed by age when starting regular shaving, voice break, acne and first nocturnal emission...... indicators of pubertal development, results also indicated earlier pubertal development among sons of obese mothers. After excluding sons of underweight mothers in a subanalysis, we observed an inverse trend between maternal pre-pregnancy BMI and age at regular shaving, acne and first nocturnal emission...

  3. Promoting Robust Design of Diode Lasers for Space: A National Initiative

    Science.gov (United States)

    Tratt, David M.; Amzajerdian, Farzin; Kashem, Nasir B.; Shapiro, Andrew A.; Mense, Allan T.

    2007-01-01

    The Diode-laser Array Working Group (DAWG) is a national-level consumer/provider forum for discussion of engineering and manufacturing issues which influence the reliability and survivability of high-power broad-area laser diode devices in space, with an emphasis on laser diode arrays (LDAs) for optical pumping of solid-state laser media. The goals of the group are to formulate and validate standardized test and qualification protocols, operational control recommendations, and consensus manufacturing and certification standards. The group is using reliability and lifetime data collected by laser diode manufacturers and the user community to develop a set of standardized guidelines for specifying and qualifying laser diodes for long-duration operation in space, the ultimate goal being to promote an informed U.S. Government investment and procurement strategy for assuring the availability and durability of space-qualified LDAs. The group is also working to establish effective implementation of statistical design techniques at the supplier design, development, and manufacturing levels to help reduce product performance variability and improve product reliability for diodes employed in space applications

  4. Fabrication and characterization of flexible Ag/ZnO Schottky diodes on polyimide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, XinAn; Zhai, JunXia; Yu, XianKun; Ding, LingHong; Zhang, WeiFeng, E-mail: wfzhang@henu.edu.cn

    2013-12-02

    In this paper, we report on the fabrication of flexible Ag/ZnO Schottky diodes on polyimide substrates by pulsed laser deposition. The structural and optical properties of the ZnO films were investigated by X-ray diffractometry and spectrophotometry. The current–voltage (I–V) characteristics of flexible Schottky diodes with and without bending were measured at room temperature. The results show that the devices have good rectifying behaviors with an ideality factor of 2.8 and a Schottky barrier height of 0.54 eV according to the I–V characteristics. It was seen that the forward bias current–voltage characteristics at sufficiently large voltages have shown the effect of series resistance. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. The results show that the electrical properties of flexible diodes change little when measured with or without bending condition, indicating that the devices have potential applications in flexible electronics. - Highlights: • Flexible Ag/ZnO Schottky diodes were fabricated. • The electrical parameters of the diodes were obtained and analyzed. • The electrical properties of the diodes with bending were also discussed.

  5. Low Power Dynamic Logic Ripple Carry Adder Using Footed Diode Domino Logic

    Directory of Open Access Journals (Sweden)

    P. Krishna Karthik

    2014-03-01

    Full Text Available In recent electronic devices power saving has more importance than any other thing. Dynamic logic circuits are one of the basic power efficient circuits which comes into picture when dealt with low power. Dynamic logic circuits operate mainly in two phases, namely Pre-charge and evaluate phase. Domino logic circuits are more power efficient and cooperatively faster circuits which operate on the above two phases. For extremely low power applications footed diode domino logic is applied. This paper mainly deals with design of Dynamic logic circuit design based on footed diode domino logic with reduction in power and leakage current. In this proposed circuit we put a diode on the foot of domino logic circuit which results in power reduction as compared to reported and conventional domino logic. We are using NMOS as a diode and due to this extra diode (NMOS, in pre-charge period leakage current reduce due to stacking effect. Approximately 32% of power is saved using footed diode domino logic. For Simulation we are using tanner tool at 180nm technology.

  6. Comparison of father-son relationship in Chinese and American films

    Institute of Scientific and Technical Information of China (English)

    倪秀飞

    2015-01-01

    The depiction of human emotions is never lacking in filmography, and affection between family members accounts for the top spot to become the most deeply touching one, especially the father-son relationship. Compared with mother-daughter and mother-son relationship, father-son relationship is often full of tension, turning out to be more introverted. So, in which way do films and television shows at home and broad represent vividly and truly about the father-child relationship?

  7. Mothers' causal explanations for their son's schizophrenia: relationship to depression and guilt.

    Science.gov (United States)

    Natale, A; Barron, C

    1994-08-01

    This study investigated the relationship between mothers' causal explanations for their son's schizophrenia and the depression and guilt mothers experience. Thirty-three mothers who were primary caregivers to a schizophrenic son were interviewed using the Causal Dimension Scale and the Multiscore Depression Inventory. Twenty-nine mothers generated 50 causal explanations for their son's schizophrenia. The most frequently cited causal category was physiological/biological factors. Guilt was associated with causal explanations characterized as internal, whereas depression was unrelated to causal dimensions. The findings support the need to assess mothers' causal explanations for their son's schizophrenia and to research the health consequences of causal explanations.

  8. Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Nihei, Shinichi [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Sato, Eiichi, E-mail: dresato@iwate-med.ac.jp [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Hamaya, Tatsuki; Numahata, Wataru; Kogita, Hayato; Kami, Syouta; Arakawa, Yumeka; Oda, Yasuyuki [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya [Department of Surgery, Toho University Ohashi Medical Center, 2-17-6 Ohashi, Meguro, Tokyo 153-8515 (Japan)

    2014-12-11

    To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current–voltage (I–V) amplifier, a voltage–voltage (V–V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I–V and V–V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu{sub 2}(SiO{sub 4})O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)–Si-PIN, and an LSO–Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)–Si-PIN and the LSO–Si-PIN at the measurement conditions. - Highlights: • X-ray detecting module was developed to measure relative sensitivities of detectors. • Event-pulse-height spectra were measured to analyze X-ray-electric conversion effect. • Total photon number substantially decreased using scintillation detectors. • Scintillation effects using YAP(Ce) and LSO were quite low. • Si-PIN sensitivity without scintillators was quite high.

  9. Efficient concept for generation of diffraction-limited green light by sum-frequency generation of spectrally combined tapered diode lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Hasler, Karl-Heinz

    2012-01-01

    significantly. By combining two distributed Bragg reflector tapered diode lasers we achieve a 2.5–3.2 fold increase in power and a maximum of 3.9 W of diffraction-limited green light. At this power level, green diode laser systems have a high application potential, e.g., within the biomedical field. Our concept...

  10. Investigation and modelling of static and dynamic behaviour if silicon-PSN- and silicon-carbide-Schottky-diodes for low currents

    NARCIS (Netherlands)

    Neeb, C.; Luerkens, P.

    2009-01-01

    High voltage generators for X-ray applications are moving to increasing switching frequency. As a consequence switching losses, namely turn-on losses, of high voltage diodes are becoming dominant. Data sheets of preferred diodes do not contain relevant data in this respect, and simulation models of

  11. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

    Science.gov (United States)

    Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

    2013-09-14

    An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

    Science.gov (United States)

    Jiménez, A.; Milde, T.; Staacke, N.; Aßmann, C.; Carpintero, G.; Sacher, J.

    2017-07-01

    Narrow-linewidth tunable diode lasers are an important tool for spectroscopic instrumentation. Conventional external cavity diode lasers offer high output power and narrow linewidth. However, most external cavity diode lasers are designed as laboratory instrument and do not allow portability. In comparison, other commonly used lasers, like distributed feedback lasers (DFB) that are capable of driving a handheld device, are limited in power and show linewidths which are not sufficiently narrow for certain applications. We present new miniaturized types of tunable external cavity diode laser which overcome the drawbacks of conventional external cavity diode lasers and which preserve the advantages of this laser concept. Three different configurations are discussed in this article. The three types of miniaturized external cavity diode laser systems achieve power values of more than 50 mW within the 1.4 μm water vapor absorption band with excellent side-mode suppression and linewidth below 100 kHz. Typical features outstand with respect to other type of laser systems which are of extended use such as DFB laser diodes. The higher output power and the lower linewidth will enable a higher sensitivity and resolution for a wide range of applications.

  13. Dosimetry with semiconductor diodes in the application to the full-length irradiation technique of electrons; Dosimetria con diodos semiconductores en la aplicacion a la tecnica de irradiacion de cuerpo entero de electrones

    Energy Technology Data Exchange (ETDEWEB)

    Madrid G, O. A.; Rivera M, T. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Calz. Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico)

    2012-10-15

    The use of charged particles as electrons for the tumor-like lesions treatment to total surface of skin is not very frequent, the types of fungo id mycosis and cutaneous lymphomas compared with other neoplasms they are relatively scarce, however for the existent cases a non conventional technique should be contemplated as treatment alternative that can reach an effective control. In this work the variables of more influence with ionization chamber and semiconductor diodes are studied for to determine the quality of an electrons beam. (Author)

  14. Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

    Science.gov (United States)

    Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

    2016-03-01

    The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

  15. Single mode operation and extended scanning of anti-reflection coated visible laser diodes in a Littrow cavity

    Science.gov (United States)

    Lonsdale, D. J.; Andrews, D. A.; King, T. A.

    2004-05-01

    A method to increase the mode-hop-free tuning range is presented that is suitable for application with visible and short wavelength laser diodes, and relaxes the requirement on high tolerance mechanical components. Depending on the diode and cavity, the theory predicts an improvement of up to eight times the FSR of the extended cavity. In our system, an anti-reflection coated AlGaInP laser diode showed a mode-hop-free scan of 8 GHz, which is characteristic for the wavelength used in the device. Greater scanning ranges are predicted for shorter wavelength sources.

  16. Light-emitting diode technology in vitreoretinal surgery.

    Science.gov (United States)

    Dithmar, Stefan; Hoeh, Alexandra E; Amberger, Roman; Ruppenstein, Mira; Ach, Thomas

    2011-05-01

    Systems for vitreoretinal illumination during surgery usually consist of an external light source and a light fiber. We introduce a new illumination system for vitreoretinal surgery based on the light-emitting diode technology, with an embedded light source in the handle of the light fiber, making a separate light source unnecessary. A prototype of a new illumination system for vitreoretinal surgery (ocuLED; Geuder, Heidelberg, Germany) was tested. This system consists of a handle with a built-in light-emitting diode, supported by an external power source. The OcuLED was analyzed in regards to wavelength, maximum radiant power, and maximum irradiance and was compared with three commercially available vitreoretinal illumination systems. Furthermore, the first intraoperative application and handling were evaluated. The ocuLED system works with a cool white or a neutral white light-emitting diode and is powered externally. The wavelength spectrum shows a maximum at 565 nm and a second peak at 455 nm. Compared with other light sources, the proportion of potentially harmful blue light is low. Maximum radiant power and irradiance are in line with xenon and mercury vapor light sources. The intrasurgical light is bright and offers good visibility. The handle of ocuLED is slightly wider than commonly used light fiber handles, which do not affect its use during surgery. Technical progress in light-emitting diode technology allows minimizing the equipment for vitreoretinal illumination. The OcuLED provides bright illumination without an external light source. Wavelength spectrum, maximum radiant power, and irradiance are safe from the risk of phototoxic damage. Intrasurgical handling is identical to conventional light fibers.

  17. Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

    Science.gov (United States)

    Etchessahar, Bertrand; Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Cartier, Frédéric; Cartier, Stéphanie; D'Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel

    2013-10-01

    The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2-10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., "High power self-pinch diode experiments for radiographic applications" IEEE Trans. Plasma Sci. 35(3), 565-572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., "ASTERIX, a high intensity X-ray generator," in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567-570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., "Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV," Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode plasmas evolution

  18. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  19. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  20. Bilayer avalanche spin-diode logic

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien [Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France); Fadel, Eric R. [Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wessels, Bruce W. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Materials Science & Engineering, Northwestern University, Evanston, IL 60208 (United States); Sahakian, Alan V. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Biomedical Engineering, Northwestern University, Evanston, IL 60208 (United States)

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  1. Full-quantum light diode

    CERN Document Server

    Ghobadi, Roohollah

    2015-01-01

    Unidirectional light transport in one-dimensional nanomaterials at the quantum level is a crucial goal to achieve for upcoming computational devices. We here employ a full-quantum mechanical approach based on master equation to describe unidirectional light transport through a pair of two-level systems coupled to a one-dimensional waveguide. By comparing with published semi-classical results, we find that the nonlinearity of the system is reduced, thereby reducing also the unidirectional light transport efficiency. Albeit not fully efficient, we find that the considered quantum system can work as a light diode with an efficiency of approximately 60%. Our results may be used in quantum computation with classical and quantized light.

  2. Quantum noise in superluminescent diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yuvek, A.M.; Taylor, H.F.; Goldberg, L.; Weller, J.F.; Dandridge, A.

    1986-04-01

    Intensity noise in a superluminescent diode (SLD) has been studied over the frequency range from 100 Hz to 2 MHz. The ''1/F'' noise which dominates at low frequencies (<59 kHz) is superceded by a flat ''white noise'' spectrum at higher frequencies (> 500 5Hz). A more extensive investigation has been carried out in this higher frequency regime, where the intensity noise is assumed to result from quantum fluctuation effects. For a given SLD driving current, the excess noise power is found to be a linear function of photodetector current to the maximum observed level of 12 db. These results agree well with the behavior predicted by a quantum amplifier model for the SLD.

  3. Single-Molecule Diodes with High On/Off Ratios Through Environmental Control

    Science.gov (United States)

    Capozzi, Brian; Xia, Jianlong; Dell, Emma; Adak, Olgun; Liu, Zhen-Fei; Neaton, Jeffrey; Campos, Luis; Venkataraman, Latha

    2015-03-01

    Single-Molecule diodes were first proposed with an asymmetric molecule comprising a donor-bridge-acceptor architecture to mimic a semiconductor p-n junction. Progress in molecular electronics has led to the realization of several single-molecule diodes; these have relied on asymmetric molecular backbones, asymmetric molecule-electrode linkers, or asymmetric electrode materials. Despite these advances, molecular diodes have had limited potential for functional applications due to several pitfalls, including low rectification ratios (``on''/``off'' current ratios environment instead of an asymmetric molecule, we reproducibly achieve high rectification ratios at low operating voltages for molecular junctions based on a family of symmetric small-gap molecules. This technique serves as an unconventional approach for developing functional molecular-scale devices and probing their charge transport characteristics. Furthermore, this technique should be applicable to other nanoscale devices, providing a general route for tuning device properties.

  4. African-American Fathers' Perspectives on Facilitators and Barriers to Father-Son Sexual Health Communication.

    Science.gov (United States)

    Randolph, Schenita D; Coakley, Tanya; Shears, Jeffrey; Thorpe, Roland J

    2017-02-21

    African-American males ages 13 through 24 are disproportionately affected by sexually transmitted infections (STIs) and human immunodeficiency virus (HIV), accounting for over half of all HIV infections in this age group in the United States. Clear communication between African-American parents and their youth about sexual health is associated with higher rates of sexual abstinence, condom use, and intent to delay initiation of sexual intercourse. However, little is known about African-American fathers' perceptions of what facilitates and inhibits sexual health communication with their preadolescent and adolescent sons. We conducted focus groups with 29 African-American fathers of sons ages 10-15 to explore perceived facilitators and barriers for father-son communication about sexual health. Participants were recruited from barbershops in metropolitan and rural North Carolina communities highly affected by STIs and HIV, and data were analyzed using content analysis. Three factors facilitated father-son communication: (a) fathers' acceptance of their roles and responsibilities; (b) a positive father-son relationship; and (c) fathers' ability to speak directly to their sons about sex. We also identified three barriers: (a) fathers' difficulty in initiating sexual health discussions with their sons; (b) sons' developmental readiness for sexual health information; and (c) fathers' lack of experience in talking with their own fathers about sex. These findings have implications for father-focused prevention interventions aimed at reducing risky sexual behaviors in adolescent African-American males. © 2017 Wiley Periodicals, Inc.

  5. 78 FR 6128 - Accreditation of R. Markey & Sons, Inc., Markan Laboratories, as a Commercial Laboratory

    Science.gov (United States)

    2013-01-29

    ... SECURITY U.S. Customs and Border Protection Accreditation of R. Markey & Sons, Inc., Markan Laboratories, as a Commercial Laboratory AGENCY: U.S. Customs and Border Protection, Department of Homeland Security. ACTION: Notice of accreditation of R. Markey & Sons, Inc., Markan Laboratories, as a...

  6. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  7. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  8. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  9. Fertility Intention, Son Preference, and Second Childbirth: Survey Findings from Shaanxi Province of China.

    Science.gov (United States)

    Jiang, Quanbao; Li, Ying; Sanchez-Barricarte, Jesús J

    2016-02-01

    China is characterized by a low fertility intention, a strong preference for sons, as well as a stringent birth control policy. In this study, we used data from a Fertility Intention and Behavior Survey of 2101 questionnaires conducted in 2013 in Shaanxi Province of northwestern China, and event history analysis methods to examine the effect of fertility intention and preference for sons on the probability of having a second child. The results not only validate the correlation of fertility intention with having a second child empirically, even in the low fertility intention and stringent birth control context of China, but also show that women with a preference for sons were less likely to have a second child. Women with son preference turn to sex-selective abortion to ensure that their first child is a son, thus reducing the likelihood of a second child and decreasing the fertility rate. Our findings also shed light on China's potential fertility policy adjustment.

  10. 'Too many girls, too much dowry': son preference and daughter aversion in rural Tamil Nadu, India.

    Science.gov (United States)

    Diamond-Smith, Nadia; Luke, Nancy; McGarvey, Stephen

    2008-10-01

    The southern Indian state of Tamil Nadu has experienced a dramatic decline in fertility, accompanied by a trend of increased son preference. This paper reports on findings from qualitative interviews with women in rural villages about their fertility decision-making. Specifically addressed are the reasons behind increasing son preference and the consequences of this change. Findings suggest that daughter aversion, fuelled primarily by the perceived economic burden of daughters due to the proliferation of dowry, is playing a larger role in fertility decision-making than son preference. The desire for a son is often trumped by the worry over having many daughters. Women use various means of controlling the sex of their children, which in this study appear to be primarily female infanticide. It is important to distinguish between son preference and daughter aversion and to examine repercussions of low fertility within this setting.

  11. Pathways to prevention: improving nonresident African American fathers' parenting skills and behaviors to reduce sons' aggression.

    Science.gov (United States)

    Howard Caldwell, Cleopatra; Antonakos, Cathy L; Assari, Shervin; Kruger, Daniel; De Loney, E Hill; Njai, Rashid

    2014-01-01

    This study describes a test of the Fathers and Sons Program for increasing intentions to avoid violence and reducing aggressive behaviors in 8- to 12-year-old African American boys by enhancing the parenting skills satisfaction and parenting behaviors of their nonresident fathers. The study included 158 intervention and 129 comparison group families. Structural equation model results indicated that the intervention was effective for improving fathers' parenting skills satisfaction, which was positively associated with sons' satisfaction with paternal engagement. Sons' paternal engagement satisfaction was positively associated with their intentions to avoid violence. Although aggressive behaviors were lower for comparison group sons, the intervention effectively reduced sons' aggressive behaviors indirectly by enhancing fathers' parenting behaviors. Support for family-centered youth violence prevention efforts is discussed.

  12. Polyandrous females produce sons that are successful at post-copulatory competition.

    Science.gov (United States)

    Klemme, I; Bäumer, J; Eccard, J A; Ylönen, H

    2014-03-01

    Some of the genetic benefit hypotheses put forward to explain multiple male mating (polyandry) predict that sons of polyandrous females will have an increased competitive ability under precopulatory or post-copulatory competition via paternally inherited traits, such as attractiveness or fertilization efficiency. Here, we tested these predictions by comparing the competitive ability of sons of experimentally monandrous and polyandrous female bank voles (Myodes glareolus), while controlling for potential material and maternal effects. In female choice experiments, we found no clear preference for sons of either monandrous or polyandrous mothers. Moreover, neither male type was dominant over the other, indicating no advantage in precopulatory male contest competition. However, in competitive matings, sons of polyandrous mothers significantly increased their mating efforts (mating duration, intromission number). In line with this, paternity success was biased towards sons of polyandrous mothers. Because there was no evidence for maternal effects, our results suggest that female bank voles gain genetic benefits from polyandry.

  13. Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

    Science.gov (United States)

    Deo, Naresh C.

    1990-01-01

    A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

  14. I-V characteristics of foilless diodes

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Zhi; Huang Wen-Hua; Yang Zhan-Feng

    2005-01-01

    Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current andconfiguration parameters, i.e. diode voltage and external magnetic field, are investigated.Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(γ0 2/3-1)3/2, in which Ld is the Anode-Cathode(AK) gap, Rc the outer radius of cathode, and Rp the radius of drifting tube; x=ln(Rp/Rc), δr=Rp- Rc. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

  15. Near infrared polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; YANG Jian; HOU Qiong; MO Yueqi; PENG Junbiao; CAO Yong

    2005-01-01

    High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

  16. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  17. A new route for the synthesis of graphene oxide–Fe{sub 3}O{sub 4} (GO–Fe{sub 3}O{sub 4}) nanocomposites and their Schottky diode applications

    Energy Technology Data Exchange (ETDEWEB)

    Metin, Önder [Department of Chemistry, Faculty of Science, Atatürk University, 25240 Erzurum (Turkey); Aydoğan, Şakir [Department of Physics, Faculty of Science, Atatürk University, 25240 Erzurum (Turkey); Meral, Kadem, E-mail: kademm@atauni.edu.tr [Department of Chemistry, Faculty of Science, Atatürk University, 25240 Erzurum (Turkey)

    2014-02-05

    Highlights: • Graphene Oxide (GO)–Fe{sub 3}O{sub 4} nanocomposites were prepared by a novel and facile method. • The successful assembly of Fe{sub 3}O{sub 4} NPs onto GO sheets was displayed by TEM. • The GO–Fe{sub 3}O{sub 4} nanocomposites/p-Si junction showed good rectifying property. -- Abstract: Addressed herein is a facile method for the preparation of magnetic graphene oxide–Fe{sub 3}O{sub 4} (GO–Fe{sub 3}O{sub 4}) nanocomposites and the rectifying properties of (GO–Fe{sub 3}O{sub 4})/p-Si junction in a Schottky diode. GO–Fe{sub 3}O{sub 4} nanocomposites were prepared by a novel method in which as-prepared GO sheets were decorated with the monodisperse Fe{sub 3}O{sub 4} nanoparticles (NPs) in dimethylformamide/chloroform mixture via a sonication process. The successful assembly of Fe{sub 3}O{sub 4} NPs onto GO sheets was displayed by transmission electron microscopy (TEM). Inductively couple plasma optical emission spectroscopy (ICP-OES) analysis of the GO–Fe{sub 3}O{sub 4} nanocomposite showed that the nanocomposite consists of 20.1 wt% Fe{sub 3}O{sub 4} NPs which provides a specific saturation magnetization (Ms) as 16 emu/g. The current–voltage (I–V) characteristics of the (GO–Fe{sub 3}O{sub 4})/p-Si junction in a Schottky diode were studied in the temperature range of 50–350 K in the steps of 25 K. It was determined that the barrier height and ideality factor of the Au/GO–Fe{sub 3}O{sub 4}/p-Si/Al Schottky diode were depended on temperature as the barrier height increased while the ideality factor decreased with increasing temperature. The experimental values of barrier height and ideality factor were varied from 0.12 eV and 11.24 at 50 K to 0.76 eV and 2.49 at 350 K, respectively. The Richardson plot exhibited non-linearity at low temperatures that was attributed to the barrier inhomogeneities prevailing at the GO–Fe{sub 3}O{sub 4}/p-Si junction.

  18. Phase Noise Reduction of Laser Diode

    Science.gov (United States)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  19. Interferometry and Holography With Diode Laser Light

    CERN Document Server

    Lunazzi, Jose Joaquin

    2016-01-01

    We made an interferometric Michelson type setup and a simple holographic setup to demonstrate the feasibility of interferometric and holographic techniques by means of a diode laser. The laser was made by using a common diode available as a penlight element (less than R$ 15,00 value) and a simple stabilized 110 VCA- 3 VCC power supply. Interference fringes and holograms of small objects where obtained very similar to those of a helium-neon laser based setup.

  20. SiC Schottky diode electrothermal macromodel

    OpenAIRE

    Masana Nadal, Francisco

    2010-01-01

    This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.

  1. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  2. Multiple Isotope Magneto Optical Trap from a single diode laser

    CERN Document Server

    Valenzuela, V M; Gutierrez, M; Gomez, E; 10.1364/JOSAB.30.001205

    2013-01-01

    We present a Dual Isotope Magneto Optical Trap produced using a single diode laser. We generate all the optical frequencies needed for trapping both species using a fiber intensity modulator. All the optical frequencies are amplified simultaneously using a tapered amplifier. The independent control of each frequency is on the RF side rather than on the optical side. This introduces an enormous simplification for laser cooling applications that often require an acousto-optic modulator for each laser beam. Frequency changing capabilities are limited by the modulator bandwidth (10 GHz). Traps for more isotopes can be simply added by including additional RF frequencies to the modulator.

  3. Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc [CEA, DAM, CESTA—F-33114 Le Barp (France); Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Cartier, Frédéric; Cartier, Stéphanie; D' Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel [CEA, DAM, GRAMAT—F-46500 Gramat (France)

    2013-10-15

    The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode

  4. Studies of the sensitivity dependence of float zone silicon diodes on gamma absorbed dose

    Energy Technology Data Exchange (ETDEWEB)

    Pascoalino, K.C.S.; Santos, T.C. dos; Barbosa, R.F.; Camargo, F. de; Goncalves, J.A.C.; Bueno, C.C. [Instituto de Pesquisas Energeticas e Nucleares (CTR/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes

    2011-07-01

    Full text: Several advantages of silicon diodes which include small size, low cost, high sensitivity and wide availability, make them suitable for dosimetry and for radiation field mapping. However, the small radiation tolerance of ordinary silicon devices has imposed constraints on their application in intense radiation fields such as found in industrial radiation processes. This scenario has been changed with the development of radiation hard silicon devices to be used as track detectors in high-energy physics experiments. Particularly, in this work it is presented the dosimetric results obtained with a batch of nine junction silicon diodes developed, in the framework of CERN RD50 Collaboration, as good candidates for improved radiation hardness. These diodes were produced with 300 micrometer n-type silicon substrate grown by standard float zone technique and processed by the Microelectronics Center of Helsinki University of Technology. The samples irradiation was performed using a Co-60 irradiator (Gammacell 220) which delivers a dose-rate of 2 kGy/h. During the irradiation, the unbiased diodes were connected through low-noise coaxial cables to the input of a KEITHLEY 617 electrometer, in order to monitor the devices photocurrent as a function of the exposure time. To study the response uniformity of the batch of nine diodes as well the sensitivity dependence on the absorbed dose, they were irradiated with different doses from 5 kGy up to 50 kGy. The sensitivity response of each device was investigated through the on-line measurements of the current signals as a function of the exposure time. For doses up to 5 kGy, all diodes exhibited a current decay of almost six percent in comparison with the value registered at the start-time of the irradiation. However, this decrease in the current sensitivity is much smaller than those observed with ordinary diodes for the same absorbed dose. The dose-response curves of the devices were also investigated through the plot

  5. Synthesis and luminescent properties of Eu3+, Eu3+/Bi3+ and Gd3+ codoped YAG:Ce3+ phosphors and their potential applications in warm white light-emitting diodes

    Science.gov (United States)

    Yang, Yuguo; Li, Jing; Liu, Bing; Zhang, Yuanyuan; Lv, Xianshun; Wei, Lei; Wang, Xuping; Xu, Jianhua; Yu, Huajian; Hu, Yanyan; Zhang, Huadi; Ma, Ling; Wang, Jiyang

    2017-10-01

    A series of YAG:Ce3+/Eu3+, YAG:Ce3+/Eu3+/Bi3+ and YAG:Ce3+/Gd3+ phosphors were synthesized by a co-precipitation method. The results suggest that all of phosphors have the cubic phase and nearly spherical morphology. However, the red emission can be produced by codoping Eu3+ and Eu3+/Bi3+ ions in YAG:Ce3+, and the codoped Gd3+ ions can induce the red-shift of Ce3+ emission. These results suggest that the Eu3+, Eu3+/Bi3+ and Gd3+ ions can be used to decrease the correlated color temperature and increase the color-rendering index of white light-emitting diodes based on InGaN blue chip and YAG:Ce3+ phosphors.

  6. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Wei, E-mail: wguo2@ncsu.edu; Kirste, Ronny; Bryan, Zachary; Bryan, Isaac; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Gerhold, Michael [Engineering Science Directorate, Army Research Office, Research Triangle Park, North Carolina 27703 (United States)

    2015-03-21

    Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher light extraction efficiency in deep-ultra-violet light-emitting diodes.

  7. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

    Science.gov (United States)

    Guo, Wei; Kirste, Ronny; Bryan, Zachary; Bryan, Isaac; Gerhold, Michael; Collazo, Ramón; Sitar, Zlatko

    2015-03-01

    Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher light extraction efficiency in deep-ultra-violet light-emitting diodes.

  8. Spontaneous generation of vortex and coherent vector beams from a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping: application to highly sensitive rotational and translational Doppler velocimetry

    Science.gov (United States)

    Otsuka, Kenju; Chu, Shu-Chun

    2017-07-01

    Selective excitation of Laguerre-Gauss modes (optical vortices: helical LG0,2 and LG0,1), reflecting their weak transverse cross-saturation of population inversions against a preceding higher-order Ince-Gauss (IG0,2) or Hermite-Gauss (HG2,1) mode, was observed in a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping. Single-frequency coherent vector beams were generated through the transverse mode locking of a pair of orthogonally polarized IG2,0 and LG0,2 or HG2,1 and LG0,1 modes. Highly sensitive self-mixing rotational and translational Doppler velocimetry is demonstrated by using vortex and coherent vector beams.

  9. April 25, 2003, FY2003 Progress Summary and FY2002 Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers,and Complementary Technologies, for Applications in Energy and Defense

    Energy Technology Data Exchange (ETDEWEB)

    Meier, W; Bibeau, C

    2005-10-25

    The High Average Power Laser Program (HAPL) is a multi-institutional, synergistic effort to develop inertial fusion energy (IFE). This program is building a physics and technology base to complement the laser-fusion science being pursued by DOE Defense programs in support of Stockpile Stewardship. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and Lawrence Livermore National Laboratory (LLNL). The current LLNL proposal is a companion document to the one submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. The NRL and LLNL proposals also jointly pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, target physics, materials and power plant economics. This proposal requests continued funding in FY03 to support LLNL in its program to build a 1 kW, 100 J, diode-pumped, crystalline laser, as well as research into high gain fusion target design, fusion chamber issues, and survivability of the final optic element. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments. The HAPL Program pursues technologies needed for laser-driven IFE. System level considerations indicate that a rep-rated laser technology will be needed, operating at 5-10 Hz. Since a total energy of {approx}2 MJ will ultimately be required to achieve suitable target gain with direct drive targets, the architecture must be scaleable. The Mercury Laser is intended to offer such an architecture. Mercury is a solid state laser that incorporates diodes, crystals and gas cooling technologies.

  10. Parent-son decision-making about human papillomavirus vaccination: a qualitative analysis

    Directory of Open Access Journals (Sweden)

    Alexander Andreia B

    2012-12-01

    Full Text Available Abstract Background Licensed for use in males in 2009, Human Papillomavirus (HPV vaccination rates in adolescent males are extremely low. Literature on HPV vaccination focuses on females, adult males, or parents of adolescent males, without including adolescent males or the dynamics of the parent-son interaction that may influence vaccine decision-making. The purpose of this paper is to examine the decision-making process of parent-son dyads when deciding whether or not to get vaccinated against HPV. Methods Twenty-one adolescent males (ages 13–17, with no previous HPV vaccination, and their parents/guardians were recruited from adolescent primary care clinics serving low to middle income families in a large Midwestern city. Dyad members participated in separate semi-structured interviews assessing the relative role of the parent and son in the decision regarding HPV vaccination. Interviews were recorded, transcribed, and coded using inductive content analysis. Results Parents and sons focused on protection as a reason for vaccination; parents felt a need to protect their child, while sons wanted to protect their own health. Parents and sons commonly misinterpreted the information about the vaccine. Sons were concerned about an injection in the penis, while some parents and sons thought the vaccine would protect them against other sexually transmitted infections including Herpes, Gonorrhea, and HIV. Parents and sons recalled that the vaccine prevented genital warts rather than cancer. The vaccine decision-making process was rapid and dynamic, including an initial reaction to the recommendation for HPV vaccine, discussion between parent and son, and the final vaccine decision. Provider input was weighed in instances of initial disagreement. Many boys felt that this was the first health care decision that they had been involved in. Dyads which reported shared decision-making were more likely to openly communicate about sexual issues than those

  11. Snakes and snails and mermaid tails: raising a gender-variant son.

    Science.gov (United States)

    Kelso, Tony

    2011-10-01

    This article is a first-person account of a father's journey to lovingly accept his young gender-variant son, who began to show traits and preferences more common to girls almost from birth. The dad's efforts to discover constructive parenting strategies for raising his boy are also detailed. Experiences described begin with guilt and awareness of his own difficulty in coming to terms with his son's behavior, progress toward seeking and finding support and guidance, and eventually learning to embrace his son as he is, perhaps with questions about his own liberality and apprehensions about his boy's future.

  12. Mother-Son Interactions in Families of Boys with Attention-Deficit/hyperactivity Disorder with and without Oppositional Behavior.

    Science.gov (United States)

    Seipp, Carla M.; Johnston, Charlotte

    2005-01-01

    Parenting responsiveness and over-reactivity were assessed among 25 mothers of 7-9-year-old sons with Attention-Deficit/Hyperactivity Disorder (ADHD) and oppositional behavior (Oppositional Defiant, OD), 24 mothers of sons with ADHD only, and 38 mothers of nonproblem sons. Responsiveness was observed during mother-son play and clean-up…

  13. Narrow line diode laser stacks for DPAL pumping

    Science.gov (United States)

    Koenning, Tobias; Irwin, David; Stapleton, Dean; Pandey, Rajiv; Guiney, Tina; Patterson, Steve

    2014-02-01

    Diode pumped alkali metal vapor lasers (DPALs) offer the promise of scalability to very high average power levels while maintaining excellent beam quality, making them an attractive candidate for future defense applications. A variety of gain media are used and each requires a different pump wavelength: near 852nm for cesium, 780nm for rubidium, 766nm for potassium, and 670nm for lithium atoms. The biggest challenge in pumping these materials efficiently is the narrow gain media absorption band of approximately 0.01nm. Typical high power diode lasers achieve spectral widths around 3nm (FWHM) in the near infrared spectrum. With state of the art locking techniques, either internal to the cavity or externally mounted gratings, the spectral width can typically be reduced to 0.5nm to 1nm for kW-class, high power stacks. More narrow spectral width has been achieved at lower power levels. The diode's inherent wavelength drift over operating temperature and output power is largely, but not completely, eliminated. However, standard locking techniques cannot achieve the required accuracy on the location of the spectral output or the spectral width for efficient DPAL pumping. Actively cooled diode laser stacks with continuous wave output power of up to 100W per 10mm bar at 780nm optimized for rubidium pumping will be presented. Custom designed external volume holographic gratings (VHGs) in conjunction with optimized chip material are used to narrow and stabilize the optical spectrum. Temperature tuning on a per-bar-level is used to overlap up to fifteen individual bar spectra into one narrow peak. At the same time, this tuning capability can be used to adjust the pump wavelength to match the absorption band of the active medium. A spectral width of <0.1nm for the entire stack is achieved at <1kW optical output power. Tuning of the peak wavelength is demonstrated for up to 0.15nm. The technology can easily be adapted to other diode laser wavelengths to pump different materials.

  14. Investigation of a diode-pumped intracavity optical parametric oscillator in pulsed and continuous wave operation

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Skettrup, Torben; Balle-Petersen, O.;

    2001-01-01

    Summary form only given. CW and pulsed compact tunable laser sources in the infrared have widespread scientific, medical and industrial applications. Such a laser source can be obtained by use of a diode-pumped intracavity optical parametric oscillator (IOPO). We report on a IOPO based on a Yb...

  15. Characterization of diode valve in medium voltage dc/dc converter for wind turbines

    DEFF Research Database (Denmark)

    Dincan, Catalin Gabriel; Kjær, Philip Carne

    2016-01-01

    This paper proposes a methodology for characterization of medium voltage (MV), medium frequency (MF) rectifier diode valve. The intended application is for 10MW dc/dc converters used in DC offshore wind turbines. Sensitivity to semiconductor component parameter variation, snubber component...

  16. Modeling Ultraviolet (UV) Light Emitting Diode (LED) Energy Propagation in Reactor Vessels

    Science.gov (United States)

    2014-03-27

    urban wastewater effluent than a single wavelength used alone (Chevremont, Farnet, Coulomb, & Boudenne, 2012; Oguma, Kita, Sakai, Murakami ...j.jcrysgro.2004.04.071 Oguma, K., Kita, R., Sakai, H., Murakami , M., & Takizawa, S. (2013). Application of UV light emitting diodes to batch and flow

  17. Pulsed dermatologic 20W diode-laser emitting at 975-nm

    Science.gov (United States)

    Piechowski, L.; Cenian, W.; Sawczak, M.; Cenian, A.

    2013-01-01

    The pulsed dermatologic laser for photothermolysis is constructed basing on technology of 975 nm diode lasers developed for fiber-laser excitation. In near future these lasers can replace ND:YAG ones for dermatologic applications, especially therapy of deep skin diseases.

  18. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

  19. Mutual phase locking of a coupled laser diode-Gunn diode pair

    OpenAIRE

    Izadpanah, S.H; Rav-Noy, Z.; Mukai, S.; Margalit, S.; Yariv, Amnon

    1984-01-01

    Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity.

  20. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...