Population death sequences and Cox processes driven by interacting Feller diffusions

CERN Document Server

Wei Gang; Feng Jian Feng

2002-01-01

We carry out a complete study on the relationship between Cox processes driven by interacting Feller diffusions and death sequences of immigration-emigration linked population networks. It is first proved that the Cox process driven by a Feller diffusion is equivalent to the death sequence of a birth and death process. The conclusion is then generalized to the case of Cox processes driven by interacting Feller diffusions and death sequences of interacting populations.

Population death sequences and Cox processes driven by interacting Feller diffusions

International Nuclear Information System (INIS)

Wei Gang; Clifford, Peter; Feng Jianfeng

2002-01-01

We carry out a complete study on the relationship between Cox processes driven by interacting Feller diffusions and death sequences of immigration-emigration linked population networks. It is first proved that the Cox process driven by a Feller diffusion is equivalent to the death sequence of a birth and death process. The conclusion is then generalized to the case of Cox processes driven by interacting Feller diffusions and death sequences of interacting populations

Population death sequences and Cox processes driven by interacting Feller diffusions

Energy Technology Data Exchange (ETDEWEB)

Wei Gang [Department of Mathematics, Baptist University, Hong Kong (China); Clifford, Peter [Department of Statistics, 1 South Parks Road, Oxford (United Kingdom); Feng Jianfeng [COGS, Sussex University, Brighton (United Kingdom)

2002-11-08

We carry out a complete study on the relationship between Cox processes driven by interacting Feller diffusions and death sequences of immigration-emigration linked population networks. It is first proved that the Cox process driven by a Feller diffusion is equivalent to the death sequence of a birth and death process. The conclusion is then generalized to the case of Cox processes driven by interacting Feller diffusions and death sequences of interacting populations.

Positron diffusion in zinc-blende-type semiconductors

International Nuclear Information System (INIS)

Singh, R.P.; Singh, M.

1992-01-01

A theory of positron diffusion in the presence of positron scattering with acoustic, piezoelectric-acoustic, and optical phonons in zinc-blende-type semiconductors is developed. The velocity-velocity correlation function is used to calculate the diffusion coefficient and the Green's function is used to calculate the correlation function. In this formulation the relaxation time automatically appears through the imaginary part of the self-energy. The effect of screening is included within the Thomas-Fermi approximation. The theory is used to calculate the energy relaxation time and diffusion length of positrons in GaAs. It is shown that the transverse and longitudinal phonons contribute almost the same amount towards the relaxation time in the piezoelectric-acoustic-phonon scattering of positrons. It is also found that the contribution of piezoelectric-acoustic-phonon scattering is about 10% to that of acoustic-phonon scattering at low temperatures. We obtained a fairly good agreement between our theory and experimental results available to us. It is found that optical-phonon scattering plays an important role in getting good agreement between theory and experiment at high temperatures

Self- and zinc diffusion in gallium antimonide

International Nuclear Information System (INIS)

Nicols, Samuel Piers

2002-01-01

The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT

Diffusion Driven Combustion Waves in Porous Media

Science.gov (United States)

Aldushin, A. P.; Matkowsky, B. J.

2000-01-01

Filtration of gas containing oxidizer, to the reaction zone in a porous medium, due, e.g., to a buoyancy force or to an external pressure gradient, leads to the propagation of Filtration combustion (FC) waves. The exothermic reaction occurs between the fuel component of the solid matrix and the oxidizer. In this paper, we analyze the ability of a reaction wave to propagate in a porous medium without the aid of filtration. We find that one possible mechanism of propagation is that the wave is driven by diffusion of oxidizer from the environment. The solution of the combustion problem describing diffusion driven waves is similar to the solution of the Stefan problem describing the propagation of phase transition waves, in that the temperature on the interface between the burned and unburned regions is constant, the combustion wave is described by a similarity solution which is a function of the similarity variable x/square root of(t) and the wave velocity decays as 1/square root of(t). The difference between the two problems is that in the combustion problem the temperature is not prescribed, but rather, is determined as part of the solution. We will show that the length of samples in which such self-sustained combustion waves can occur, must exceed a critical value which strongly depends on the combustion temperature T(sub b). Smaller values of T(sub b) require longer sample lengths for diffusion driven combustion waves to exist. Because of their relatively small velocity, diffusion driven waves are considered to be relevant for the case of low heat losses, which occur for large diameter samples or in microgravity conditions, Another possible mechanism of porous medium combustion describes waves which propagate by consuming the oxidizer initially stored in the pores of the sample. This occurs for abnormally high pressure and gas density. In this case, uniformly propagating planar waves, which are kinetically controlled, can propagate, Diffusion of oxidizer decreases

Diffusion-driven steady states of the Z-pinch

International Nuclear Information System (INIS)

Lehnert, B.

1988-01-01

Steady states of a Z-pinch where no electric field is imposed along the pinch axis by external means are investigated. In this case, diffusion-driven states become possible when imposed volume sources of particles and heat drive a radial diffusion velocity that, in its turn, generates the electric plasma current. The particle sources can be from pellet injection or a neutral gas blanket, and the heat sources provided by thermonuclear reactions or auxiliary heating. The present analysis and associated kinetic considerations indicate that steady diffusion-driven operation should become possible for certain classes of plasma profiles, without running into singularity problems at the pinch axis. Such operation leads to higher axial currents in a Z-pinch without an axial magnetic field than in a tokamaklike case under similar plasma conditions. The technical difficulty in realizing a volume distribution of particle sinks introduces certain constraints on the plasma and current profiles. This fact has to be taken into account in a stability analysis. Neoclassical or anomalous diffusion will increase the diffusion velocity of the plasma but is not expected to affect the main physical features of the present results

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

International Nuclear Information System (INIS)

Adorno, Dominique Persano; Pizzolato, Nicola; Fazio, Claudio

2015-01-01

Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations. (paper)

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

Science.gov (United States)

Persano Adorno, Dominique; Pizzolato, Nicola; Fazio, Claudio

2015-09-01

Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Quantum-corrected drift-diffusion models for transport in semiconductor devices

International Nuclear Information System (INIS)

De Falco, Carlo; Gatti, Emilio; Lacaita, Andrea L.; Sacco, Riccardo

2005-01-01

In this paper, we propose a unified framework for Quantum-corrected drift-diffusion (QCDD) models in nanoscale semiconductor device simulation. QCDD models are presented as a suitable generalization of the classical drift-diffusion (DD) system, each particular model being identified by the constitutive relation for the quantum-correction to the electric potential. We examine two special, and relevant, examples of QCDD models; the first one is the modified DD model named Schroedinger-Poisson-drift-diffusion, and the second one is the quantum-drift-diffusion (QDD) model. For the decoupled solution of the two models, we introduce a functional iteration technique that extends the classical Gummel algorithm widely used in the iterative solution of the DD system. We discuss the finite element discretization of the various differential subsystems, with special emphasis on their stability properties, and illustrate the performance of the proposed algorithms and models on the numerical simulation of nanoscale devices in two spatial dimensions

Real-space renormalization group approach to driven diffusive systems

Energy Technology Data Exchange (ETDEWEB)

Hanney, T [SUPA and School of Physics, University of Edinburgh, Mayfield Road, Edinburgh, EH9 3JZ (United Kingdom); Stinchcombe, R B [Theoretical Physics, 1 Keble Road, Oxford, OX1 3NP (United Kingdom)

2006-11-24

We introduce a real-space renormalization group procedure for driven diffusive systems which predicts both steady state and dynamic properties. We apply the method to the boundary driven asymmetric simple exclusion process and recover exact results for the steady state phase diagram, as well as the crossovers in the relaxation dynamics for each phase.

Real-space renormalization group approach to driven diffusive systems

International Nuclear Information System (INIS)

Hanney, T; Stinchcombe, R B

2006-01-01

We introduce a real-space renormalization group procedure for driven diffusive systems which predicts both steady state and dynamic properties. We apply the method to the boundary driven asymmetric simple exclusion process and recover exact results for the steady state phase diagram, as well as the crossovers in the relaxation dynamics for each phase

Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

NARCIS (Netherlands)

Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.

2004-01-01

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we

Evaluation of diffusivity in the anterior lobe of the pituitary gland: 3D turbo field echo with diffusion-sensitized driven-equilibrium preparation.

Science.gov (United States)

Hiwatashi, A; Yoshiura, T; Togao, O; Yamashita, K; Kikuchi, K; Kobayashi, K; Ohga, M; Sonoda, S; Honda, H; Obara, M

2014-01-01

3D turbo field echo with diffusion-sensitized driven-equilibrium preparation is a non-echo-planar technique for DWI, which enables high-resolution DWI without field inhomogeneity-related image distortion. The purpose of this study was to evaluate the feasibility of diffusion-sensitized driven-equilibrium turbo field echo in evaluating diffusivity in the normal pituitary gland. First, validation of diffusion-sensitized driven-equilibrium turbo field echo was attempted by comparing it with echo-planar DWI. Five healthy volunteers were imaged by using diffusion-sensitized driven-equilibrium turbo field echo and echo-planar DWI. The imaging voxel size was 1.5 × 1.5 × 1.5 mm(3) for diffusion-sensitized driven-equilibrium turbo field echo and 1.5 × 1.9 × 3.0 mm(3) for echo-planar DWI. ADCs measured by the 2 methods in 15 regions of interests (6 in gray matter and 9 in white matter) were compared by using the Pearson correlation coefficient. The ADC in the pituitary anterior lobe was then measured in 10 volunteers by using diffusion-sensitized driven-equilibrium turbo field echo, and the results were compared with those in the pons and vermis by using a paired t test. The ADCs from the 2 methods showed a strong correlation (r = 0.79; P pituitary gland were 1.37 ± 0.13 × 10(-3) mm(2)/s, which were significantly higher than those in the pons (1.01 ± 0.24 × 10(-3) mm(2)/s) and the vermis (0.89 ± 0.25 × 10(-3) mm(2)/s, P pituitary gland.

Diffusive smoothing of surfzone bathymetry by gravity-driven sediment transport

Science.gov (United States)

Moulton, M. R.; Elgar, S.; Raubenheimer, B.

2012-12-01

Gravity-driven sediment transport often is assumed to have a small effect on the evolution of nearshore morphology. Here, it is shown that down-slope gravity-driven sediment transport is an important process acting to smooth steep bathymetric features in the surfzone. Gravity-driven transport can be modeled as a diffusive term in the sediment continuity equation governing temporal (t) changes in bed level (h): ∂h/∂t ≈ κ ▽2h, where κ is a sediment diffusion coefficient that is a function of the bed shear stress (τb) and sediment properties, such as the grain size and the angle of repose. Field observations of waves, currents, and the evolution of large excavated holes (initially 10-m wide and 2-m deep, with sides as steep as 35°) in an energetic surfzone are consistent with diffusive smoothing by gravity. Specifically, comparisons of κ estimated from the measured bed evolution with those estimated with numerical model results for several transport theories suggest that gravity-driven sediment transport dominates the bed evolution, with κ proportional to a power of τb. The models are initiated with observed bathymetry and forced with observed waves and currents. The diffusion coefficients from the measurements and from the model simulations were on average of order 10-5 m2/s, implying evolution time scales of days for features with length scales of 10 m. The dependence of κ on τb varies for different transport theories and for high and low shear stress regimes. The US Army Corps of Engineers Field Research Facility, Duck, NC provided excellent logistical support. Funded by a National Security Science and Engineering Faculty Fellowship, a National Defense Science and Engineering Graduate Fellowship, and the Office of Naval Research.

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Diffusion-weighted magnetic resonance imaging of extraocular muscles in patients with Grave's ophthalmopathy using turbo field echo with diffusion-sensitized driven-equilibrium preparation.

Science.gov (United States)

Hiwatashi, A; Togao, O; Yamashita, K; Kikuchi, K; Momosaka, D; Honda, H

2018-03-20

The purpose of this study was to correlate diffusivity of extraocular muscles, measured by three-dimensional turbo field echo (3DTFE) magnetic resonance (MR) imaging using diffusion-sensitized driven-equilibrium preparation, with their size and activity in patients with Grave's ophthalmopathy. Twenty-three patients with Grave's ophthalmopathy were included. There were 17 women and 6 men with a mean age of 55.8±12.6 (SD) years (range: 26-83 years). 3DTFE with diffusion-sensitized driven-equilibrium MR images were obtained with b-values of 0 and 500s/mm 2 . The apparent diffusion coefficient (ADC) of extraocular muscles was measured on coronal reformatted MR images. Signal intensities of extraocular muscles on conventional MR images were compared to those of normal-appearing white matter, and cross-sectional areas of the muscles were also measured. The clinical activity score was also evaluated. Statistical analyses were performed with Pearson correlation and Mann-Whitney U tests. On 3DTFE with diffusion-sensitized driven-equilibrium preparation, the mean ADC of the extraocular muscles was 2.23±0.37 (SD)×10 -3 mm2/s (range: 1.70×10 -3 -3.11×10 -3 mm 2 /s). There was a statistically significant moderate correlation between ADC and the size of the muscles (r=0.61). There were no statistically significant correlations between ADC and signal intensity on conventional MR and the clinical activity score. 3DTFE with diffusion-sensitized driven-equilibrium preparation technique allows quantifying diffusivity of extraocular muscles in patients with Grave's ophthalmopathy. The diffusivity of the extraocular muscles on 3DTFE with diffusion-sensitized driven-equilibrium preparation MR images moderately correlates with their size. Copyright © 2018. Published by Elsevier Masson SAS.

Numerical simulation of impurities diffusion in a semiconductor. Application to the bore case in silicon

International Nuclear Information System (INIS)

Monnier, Joel

1971-01-01

To make a connection between technological parameters and electrical models it is necessary to know with a good accuracy the shape of the diffusion profiles. To do that we solve Fick's equations taking into account almost all physical phenomena known for diffusion in semiconductors: presence of an oxide layer, point defect diffusion coefficient dependence, impact of internal electric field, limited input flux, segregation coefficient... We have used DIFFUSI to predict diffusion profiles for device simulation programs; greater accuracy is then obtain to compute device properties and to optimize the device itself it is easy. Never accurate methods have still been studied like ionic probe and nuclear reactions to measure with an increased accuracy on the shape of the doping profiles. (author) [fr

Interestingness-Driven Diffusion Process Summarization in Dynamic Networks

DEFF Research Database (Denmark)

Qu, Qiang; Liu, Siyuan; Jensen, Christian S.

2014-01-01

The widespread use of social networks enables the rapid diffusion of information, e.g., news, among users in very large communities. It is a substantial challenge to be able to observe and understand such diffusion processes, which may be modeled as networks that are both large and dynamic. A key...... tool in this regard is data summarization. However, few existing studies aim to summarize graphs/networks for dynamics. Dynamic networks raise new challenges not found in static settings, including time sensitivity and the needs for online interestingness evaluation and summary traceability, which...... render existing techniques inapplicable. We study the topic of dynamic network summarization: how to summarize dynamic networks with millions of nodes by only capturing the few most interesting nodes or edges over time, and we address the problem by finding interestingness-driven diffusion processes...

Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

Science.gov (United States)

Maksimov, A. A.; Yakovlev, D. R.; Debus, J.; Tartakovskii, I. I.; Waag, A.; Karczewski, G.; Wojtowicz, T.; Kossut, J.; Bayer, M.

2010-07-01

The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te were studied optically and simulated numerically. In samples with inhomogeneous magnetic ion distribution, these dynamics are contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. A spin-diffusion coefficient of 7×10-8cm2/s was evaluated for Zn0.99Mn0.01Se from comparison of experiment and theory. Calculations of the exciton giant Zeeman splitting and the magnetization dynamics in ordered alloys and digitally grown parabolic quantum wells show perfect agreement with the experimental data. In both structure types, spin diffusion contributes essentially to the magnetization dynamics.

Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

1998-01-01

Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near......-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient...

Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

International Nuclear Information System (INIS)

Keay, B.J.; Allen, S.J.; Campman, K.L.

1995-01-01

We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process

Compact Models for Defect Diffusivity in Semiconductor Alloys.

Energy Technology Data Exchange (ETDEWEB)

Wright, Alan F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Lee, Stephen R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Department; Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Department

2017-09-01

Predicting transient effects caused by short - pulse neutron irradiation of electronic devices is an important part of Sandia's mission. For example , predicting the diffusion of radiation - induced point defects is needed with in Sandia's Qualification Alternative to the Sandia Pulsed Reactor (QASPR) pro gram since defect diffusion mediates transient gain recovery in QASPR electronic devices. Recently, the semiconductors used to fabricate radiation - hard electronic devices have begun to shift from silicon to III - V compounds such as GaAs, InAs , GaP and InP . An advantage of this shift is that it allows engineers to optimize the radiation hardness of electronic devices by using alloy s such as InGaAs and InGaP . However, the computer codes currently being used to simulate transient radiation effects in QASP R devices will need to be modified since they presume that defect properties (charge states, energy levels, and diffusivities) in these alloys do not change with time. This is not realistic since the energy and properties of a defect depend on the types of atoms near it and , therefore, on its location in the alloy. In particular, radiation - induced defects are created at nearly random locations in an alloy and the distribution of their local environments - and thus their energies and properties - evolves with time as the defects diffuse through the alloy . To incorporate these consequential effects into computer codes used to simulate transient radiation effects, we have developed procedures to accurately compute the time dependence of defect energies and properties and then formulate them within compact models that can be employed in these computer codes. In this document, we demonstrate these procedures for the case of the highly mobile P interstitial (I P ) in an InGaP alloy. Further dissemination only as authorized to U.S. Government agencies and their contractors; other requests shall be approved by the originating facility or higher DOE

Non-diffusive transport in 3-D pressure driven plasma turbulence

International Nuclear Information System (INIS)

Del-Castillo-Negrete, D.; Carreras, B.A.; Lynch, V.

2005-01-01

Numerical evidence of non-diffusive transport in 3-dimensional, resistive, pressure-gradient-driven plasma turbulence is presented. It is shown that the probability density function (pdf) of tracers is strongly non-Gaussian and exhibits algebraic decaying tails. To describe these results, a transport model using fractional derivative operators in proposed. The model incorporates in a unified way non-locality (i.e., non-Fickian transport), memory effects (i.e., non-Markovian transport), and non-diffusive scaling features known to be present in fusion plasmas. There is quantitative agreement between the model and the turbulent transport numerical calculations. In particular, the model reproduces the shape and space-time scaling of the pdf, and the super-diffusive scaling of the moments. (author)

Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

Science.gov (United States)

Lin, Jyh‑Ling; Lin, Ming‑Jang; Lin, Li‑Jheng

2006-04-01

The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (\\mathit{BV}) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the \\mathit{BV} and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

Double-diffusive mixed convection in a lid-driven cavity with non ...

Indian Academy of Sciences (India)

S SIVASANKARAN

2017-11-11

Nov 11, 2017 ... transfer are solved using the finite-volume method. The numerical ... Keywords. Mixed convection; double diffusion; non-uniform heating; lid-driven cavity. 1. ... exhaustive research due to its importance in various engi- neering ...

Innovation diffusion on time-varying activity driven networks

Science.gov (United States)

Rizzo, Alessandro; Porfiri, Maurizio

2016-01-01

Since its introduction in the 1960s, the theory of innovation diffusion has contributed to the advancement of several research fields, such as marketing management and consumer behavior. The 1969 seminal paper by Bass [F.M. Bass, Manag. Sci. 15, 215 (1969)] introduced a model of product growth for consumer durables, which has been extensively used to predict innovation diffusion across a range of applications. Here, we propose a novel approach to study innovation diffusion, where interactions among individuals are mediated by the dynamics of a time-varying network. Our approach is based on the Bass' model, and overcomes key limitations of previous studies, which assumed timescale separation between the individual dynamics and the evolution of the connectivity patterns. Thus, we do not hypothesize homogeneous mixing among individuals or the existence of a fixed interaction network. We formulate our approach in the framework of activity driven networks to enable the analysis of the concurrent evolution of the interaction and individual dynamics. Numerical simulations offer a systematic analysis of the model behavior and highlight the role of individual activity on market penetration when targeted advertisement campaigns are designed, or a competition between two different products takes place.

Modeling Diffusion and Buoyancy-Driven Convection with Application to Geological CO2 Storage

KAUST Repository

Allen, Rebecca

2015-04-01

ABSTRACT Modeling Diffusion and Buoyancy-Driven Convection with Application to Geological CO2 Storage Rebecca Allen Geological CO2 storage is an engineering feat that has been undertaken around the world for more than two decades, thus accurate modeling of flow and transport behavior is of practical importance. Diffusive and convective transport are relevant processes for buoyancy-driven convection of CO2 into underlying fluid, a scenario that has received the attention of numerous modeling studies. While most studies focus on Darcy-scale modeling of this scenario, relatively little work exists at the pore-scale. In this work, properties evaluated at the pore-scale are used to investigate the transport behavior modeled at the Darcy-scale. We compute permeability and two different forms of tortuosity, namely hydraulic and diffusive. By generating various pore ge- ometries, we find hydraulic and diffusive tortuosity can be quantitatively different in the same pore geometry by up to a factor of ten. As such, we emphasize that these tortuosities should not be used interchangeably. We find pore geometries that are characterized by anisotropic permeability can also exhibit anisotropic diffusive tortuosity. This finding has important implications for buoyancy-driven convection modeling; when representing the geological formation with an anisotropic permeabil- ity, it is more realistic to also account for an anisotropic diffusivity. By implementing a non-dimensional model that includes both a vertically and horizontally orientated 5 Rayleigh number, we interpret our findings according to the combined effect of the anisotropy from permeability and diffusive tortuosity. In particular, we observe the Rayleigh ratio may either dampen or enhance the diffusing front, and our simulation data is used to express the time of convective onset as a function of the Rayleigh ratio. Also, we implement a lattice Boltzmann model for thermal convective flows, which we treat as an analog for

Nanoscopic diffusion studies on III-V compound semiconductor structures: Experiment and theory

Science.gov (United States)

Gonzalez Debs, Mariam

The electronic structure of multilayer semiconductor heterostructures is affected by the detailed compositional profiles throughout the structure and at critical interfaces. The extent of interdiffusion across these interfaces places limits on both the processing time and temperatures for many applications based on the resultant compositional profile and associated electronic structure. Atomic and phenomenological methods were used in this work through the combination of experiment and theory to understand the nanoscopic mechanisms in complex heterostructures. Two principal studies were conducted. Tin diffusion in GaAs was studied by fitting complex experimental diffusion profiles to a phenomenological model which involved the diffusion of substitutional and interstitial dopant atoms. A methodology was developed combining both the atomistic model and the use of key features within these experimentally-obtained diffusion profiles to determine meaningful values of the transport and defect reaction rate parameters. Interdiffusion across AlSb/GaSb multi-quantum well interfaces was also studied. The chemical diffusion coefficient characterizing the AlSb/GaSb diffusion couple was quantitatively determined by fitting the observed photoluminescence (PL) peak shifts to the solution of the Schrodinger equation using a potential derived from the solution of the diffusion equation to quantify the interband transition energy shifts. First-principles calculations implementing Density Functional Theory were performed to study the thermochemistry of point defects as a function of local environment, allowing a direct comparison of interfacial and bulk diffusion phenomena within these nanoscopic structures. Significant differences were observed in the Ga and Al vacancy formation energies at the AlSb/GaSb interface when compared to bulk AlSb and GaSb with the largest change found for Al vacancies. The AlSb/GaSb structures were further studied using positron annihilation spectroscopy

Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

Science.gov (United States)

Xiao, Xiang-Bo; Liu, Bang-Gui

2018-03-01

It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.

Science.gov (United States)

Zhu, Zhen-Gang; Berakdar, Jamal

2009-04-08

We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.

Flagella-Driven Flows Circumvent Diffusive Bottlenecks that Inhibit Metabolite Exchange

Science.gov (United States)

Short, Martin; Solari, Cristian; Ganguly, Sujoy; Kessler, John; Goldstein, Raymond; Powers, Thomas

2006-03-01

The evolution of single cells to large and multicellular organisms requires matching the organisms' needs to the rate of exchange of metabolites with the environment. This logistic problem can be a severe constraint on development. For organisms with a body plan that approximates a spherical shell, such as colonies of the volvocine green algae, the required current of metabolites grows quadratically with colony radius whereas the rate at which diffusion can exchange metabolites grows only linearly with radius. Hence, there is a bottleneck radius beyond which the diffusive current cannot keep up with metabolic demands. Using Volvox carteri as a model organism, we examine experimentally and theoretically the role that advection of fluid by surface-mounted flagella plays in enhancing nutrient uptake. We show that fluid flow driven by the coordinated beating of flagella produces a convective boundary layer in the concentration of a diffusing solute which in turn renders the metabolite exchange rate quadratic in the colony radius. This enhanced transport circumvents the diffusive bottleneck, allowing increase in size and thus evolutionary transitions to multicellularity in the Volvocales.

Hall effect driven by non-collinear magnetic polarons in diluted magnetic semiconductors

Science.gov (United States)

Denisov, K. S.; Averkiev, N. S.

2018-04-01

In this letter, we develop the theory of Hall effect driven by non-collinear magnetic textures (topological Hall effect—THE) in diluted magnetic semiconductors (DMSs). We show that a carrier spin-orbit interaction induces a chiral magnetic ordering inside a bound magnetic polaron (BMP). The inner structure of non-collinear BMP is controlled by the type of spin-orbit coupling, allowing us to create skyrmion- (Rashba) or antiskyrmion-like (Dresselhaus) configurations. The asymmetric scattering of itinerant carriers on polarons leads to the Hall response which exists in weak external magnetic fields and at low temperatures. We point out that DMS-based systems allow one to investigate experimentally the dependence of THE both on a carrier spin polarization and on a non-collinear magnetic texture shape.

Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al/n-GaAs/Al Superconductor-Semiconductor-Superconductor Junctions

DEFF Research Database (Denmark)

Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Clausen, Thomas

1997-01-01

In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the ...

Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation.

Science.gov (United States)

Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

2016-07-14

Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.

Finite difference discretization of semiconductor drift-diffusion equations for nanowire solar cells

Science.gov (United States)

Deinega, Alexei; John, Sajeev

2012-10-01

We introduce a finite difference discretization of semiconductor drift-diffusion equations using cylindrical partial waves. It can be applied to describe the photo-generated current in radial pn-junction nanowire solar cells. We demonstrate that the cylindrically symmetric (l=0) partial wave accurately describes the electronic response of a square lattice of silicon nanowires at normal incidence. We investigate the accuracy of our discretization scheme by using different mesh resolution along the radial direction r and compare with 3D (x, y, z) discretization. We consider both straight nanowires and nanowires with radius modulation along the vertical axis. The charge carrier generation profile inside each nanowire is calculated using an independent finite-difference time-domain simulation.

Statistical mechanics of driven diffusive systems

CERN Document Server

Schmittmann, B

1995-01-01

Far-from-equilibrium phenomena, while abundant in nature, are not nearly as well understood as their equilibrium counterparts. On the theoretical side, progress is slowed by the lack of a simple framework, such as the Boltzmann-Gbbs paradigm in the case of equilibrium thermodynamics. On the experimental side, the enormous structural complexity of real systems poses serious obstacles to comprehension. Similar difficulties have been overcome in equilibrium statistical mechanics by focusing on model systems. Even if they seem too simplistic for known physical systems, models give us considerable insight, provided they capture the essential physics. They serve as important theoretical testing grounds where the relationship between the generic physical behavior and the key ingredients of a successful theory can be identified and understood in detail. Within the vast realm of non-equilibrium physics, driven diffusive systems form a subset with particularly interesting properties. As a prototype model for these syst...

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

Reduced equations of motion for quantum systems driven by diffusive Markov processes.

Science.gov (United States)

Sarovar, Mohan; Grace, Matthew D

2012-09-28

The expansion of a stochastic Liouville equation for the coupled evolution of a quantum system and an Ornstein-Uhlenbeck process into a hierarchy of coupled differential equations is a useful technique that simplifies the simulation of stochastically driven quantum systems. We expand the applicability of this technique by completely characterizing the class of diffusive Markov processes for which a useful hierarchy of equations can be derived. The expansion of this technique enables the examination of quantum systems driven by non-Gaussian stochastic processes with bounded range. We present an application of this extended technique by simulating Stark-tuned Förster resonance transfer in Rydberg atoms with nonperturbative position fluctuations.

Diffusion-advection within dynamic biological gaps driven by structural motion

Science.gov (United States)

Asaro, Robert J.; Zhu, Qiang; Lin, Kuanpo

2018-04-01

To study the significance of advection in the transport of solutes, or particles, within thin biological gaps (channels), we examine theoretically the process driven by stochastic fluid flow caused by random thermal structural motion, and we compare it with transport via diffusion. The model geometry chosen resembles the synaptic cleft; this choice is motivated by the cleft's readily modeled structure, which allows for well-defined mechanical and physical features that control the advection process. Our analysis defines a Péclet-like number, AD, that quantifies the ratio of time scales of advection versus diffusion. Another parameter, AM, is also defined by the analysis that quantifies the full potential extent of advection in the absence of diffusion. These parameters provide a clear and compact description of the interplay among the well-defined structural, geometric, and physical properties vis-a ̀-vis the advection versus diffusion process. For example, it is found that AD˜1 /R2 , where R is the cleft diameter and hence diffusion distance. This curious, and perhaps unexpected, result follows from the dependence of structural motion that drives fluid flow on R . AM, on the other hand, is directly related (essentially proportional to) the energetic input into structural motion, and thereby to fluid flow, as well as to the mechanical stiffness of the cleftlike structure. Our model analysis thus provides unambiguous insight into the prospect of competition of advection versus diffusion within biological gaplike structures. The importance of the random, versus a regular, nature of structural motion and of the resulting transient nature of advection under random motion is made clear in our analysis. Further, by quantifying the effects of geometric and physical properties on the competition between advection and diffusion, our results clearly demonstrate the important role that metabolic energy (ATP) plays in this competitive process.

Modification of semiconductors with proton beams. A review

International Nuclear Information System (INIS)

Kozlovskii, V.V.; Lomasov, V.N.; Kozlov, V.A.

2000-01-01

Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is shown to have high potential in monitoring the properties of semiconductor materials and designing devices of micro and nano electronics as compared to the conventional doping techniques such as thermal diffusion, epitaxy, and ion implantation

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-10-15

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V{sub SDH}) is derived, and drift and diffusive contributions to V{sub SDH} are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V{sub SDH} increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V{sub SDH} is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

Pattern formation, social forces, and diffusion instability in games with success-driven motion

Science.gov (United States)

Helbing, Dirk

2009-02-01

A local agglomeration of cooperators can support the survival or spreading of cooperation, even when cooperation is predicted to die out according to the replicator equation, which is often used in evolutionary game theory to study the spreading and disappearance of strategies. In this paper, it is shown that success-driven motion can trigger such local agglomeration and may, therefore, be used to supplement other mechanisms supporting cooperation, like reputation or punishment. Success-driven motion is formulated here as a function of the game-theoretical payoffs. It can change the outcome and dynamics of spatial games dramatically, in particular as it causes attractive or repulsive interaction forces. These forces act when the spatial distributions of strategies are inhomogeneous. However, even when starting with homogeneous initial conditions, small perturbations can trigger large inhomogeneities by a pattern-formation instability, when certain conditions are fulfilled. Here, these instability conditions are studied for the prisoner’s dilemma and the snowdrift game. Furthermore, it is demonstrated that asymmetrical diffusion can drive social, economic, and biological systems into the unstable regime, if these would be stable without diffusion.

Problems and progress in radiation physics of semiconductors

International Nuclear Information System (INIS)

Vinetskij, V.L.

1982-01-01

A survey of the current status of radiation physics of semiconductors comprises the analysis of some new problems and poses the statement of concern. The essential difference between the probability of interstitial-vacancy pair occurrence W(T) in elastic collisions and the generally accepted step distribution with a typical ''threshold'' energy Tsub(d) is indicated. The role of diffusion and reaction evolution of primary defects leading to specific properties of the cluster formation process is shown. Special features of defect formation in spatially inhomogeneous semiconductors, in particular for elastic stresses present, are described. Among most important advances in the radiation physics of semiconductors there are the discovery of non-activation motion of the ''extra'' atom in silicon, the observation of a low activation energy value for the vacancy diffusion, the understanding of subthreshold mechanism of defect formation and radiation-induced diffusion, the effects of laser annealing of defects and oriented crystallization

Room-temperature ductile inorganic semiconductor

Science.gov (United States)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

Institute of Scientific and Technical Information of China (English)

Ren Min; Li Ze-Hong; Liu Xiao-Long; Xie Jia-Xiong; Deng Guang-Min; Zhang Bo

2011-01-01

A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (Ron,sp),whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region,is proposed.The theoretical limit of its Ron,sp is deduced,the influence of structure parameters on the breakdown voltage (BV) and Ron,sp are investigated,and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained.Simulations show that the inhomogencous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET)has a superior “Ron,sp/BV” trade-off to the conventional VDMOS (a 38％ reduction of Ron,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10％ reduction of Ron,sp with the same BV).The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET.Its reverse recovery peak current,reverse recovery time and reverse recovery charge are about 50,80 and 40％ of those of the superjunction MOSFET,respectively.

Isotopically controlled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Haller, Eugene E.

2006-06-19

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

Science.gov (United States)

Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

2012-11-26

The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

Thermal diffusion segregation of an impurity in a driven granular fluid

Energy Technology Data Exchange (ETDEWEB)

Reyes, Francisco Vega; Garzó, Vicente [Departamento de Física, Universidad de Extremadura, E-06071 Badajoz, Spain and Instituto de Computación Científica Avanzada (ICCAEx), Universidad de Extremadura, E-06071 Badajoz (Spain)

2014-12-09

We study segregation of an impurity in a driven granular fluid under two types of steady states. In the first state, the granular gas is driven by a stochastic volume force field with a Fourier-type profile while in the second state, the granular gas is sheared in such a way that inelastic cooling is balanced by viscous heating. We compare theoretical results derived from a solution of the (inelastic) Boltzmann equation at Navier-Stokes (NS) order with those obtained from the Direct Monte Carlo simulation (DSMC) method and molecular dynamics (MD) simulations. Good agreement is found between theory and simulation, which provides strong evidence of the reliability of NS granular hydrodynamics for these steady states (including the dynamics of the impurity), even at high inelasticity. In addition, preliminary results for thermal diffusion in granular fluids at moderate densities are also presented. As for dilute gases, excellent agreement is also found in this more general case.

A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

International Nuclear Information System (INIS)

Ren Min; Li Ze-Hong; Liu Xiao-Long; Xie Jia-Xiong; Deng Guang-Min; Zhang Bo

2011-01-01

A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R on,sp ), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its R on,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R on,sp are investigated, and the optimized results with BV of 83 V and R on,sp of 54 mΩ·mm 2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior 'R on,sp /BV' trade-off to the conventional VDMOS (a 38% reduction of R on,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R on,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively. (interdisciplinary physics and related areas of science and technology)

Small-signal analysis of granular semiconductors

Energy Technology Data Exchange (ETDEWEB)

Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

2010-11-01

The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

Small-signal analysis of granular semiconductors

International Nuclear Information System (INIS)

Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

2010-01-01

The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

Diffusion of Implanted Radioisotopes in Solids

CERN Multimedia

2002-01-01

Implantation of radioisotopes into metal and semiconductor samples is performed. The implanted isotope or its decay-product should have a half-life long enough for radiotracer diffusion experiments. Such radioisotopes are utilized to investigate basic diffusion properties in semiconductors and metals and to improve our understanding of the atomic mechanisms of diffusion. For suitably chosen systems the combination of on-line production and clean implantation of radioisotopes at the ISOLDE facility opens new possibilities for diffusion studies in solids. \\\\ \\\\ The investigations are concentrated on diffusion studies of $^{195}$Au in amorphous materials. The isotope $^{195}$Au was obtained from the mass 195 of the mercury beam. $^{195}$Hg decays into $^{195}$Au which is a very convenient isotope for diffusion experiments. \\\\ \\\\ It was found that $^{195}$Au is a slow diffusor in amorphous Co-Zr alloys, whereas Co is a fast diffusor in the same matrix. The ``asymmetry'' in the diffusion behaviour is of considerab...

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Driven diffusion against electrostatic or effective energy barrier across α-hemolysin

Energy Technology Data Exchange (ETDEWEB)

Ansalone, Patrizio [Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, Torino, IT-10135 (Italy); Chinappi, Mauro [Center for Life Nano Science@Sapienza, Istituto Italiano di Tecnologia, Via Regina Elena 291, 00161 Roma (Italy); Rondoni, Lamberto [Scienze Matematiche, Politecnico di Torino Corso Duca degli Abruzzi 24, Torino, IT-10129, Italy and INFN, Sez. di Torino, Via P. Giuria 1, Torino IT-10125 (Italy); Cecconi, Fabio, E-mail: fabio.cecconi@roma1.infn.it [CNR-Istituto dei Sistemi Complessi UoS “Sapienza,” Via dei Taurini 19, 00185 Roma (Italy)

2015-10-21

We analyze the translocation of a charged particle across an α-Hemolysin (αHL) pore in the framework of a driven diffusion over an extended energy barrier generated by the electrical charges of the αHL. A one-dimensional electrostatic potential is extracted from the full 3D solution of the Poisson’s equation. We characterize the particle transport under the action of a constant forcing by studying the statistics of the translocation time. We derive an analytical expression of translocation time average that compares well with the results from Brownian dynamic simulations of driven particles over the electrostatic potential. Moreover, we show that the translocation time distributions can be perfectly described by a simple theory which replaces the true barrier by an equivalent structureless square barrier. Remarkably, our approach maintains its accuracy also for low-applied voltage regimes where the usual inverse-Gaussian approximation fails. Finally, we discuss how the comparison between the simulated time distributions and their theoretical prediction results to be greatly simplified when using the notion of the empirical Laplace transform technique.

Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1987-01-01

When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

Defects and diffusion in semiconductors XII

CERN Document Server

Fisher, David J

2010-01-01

This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes - in line with the policy of including original papers on all of the major material groups: ""Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films"" (A.Sharma and P.B.Barman), ""Structure and Optical Properties of Magnetron-Sputtered SiOx Layers with Silicon Nanoparticles"" (L.Khomenkova, N.Korsunska, T.Stara, Y.Goldstein, J.

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

International Nuclear Information System (INIS)

Aleksiejūnas, R.; Gelžinytė, K.; Nargelas, S.; Jarašiūnas, K.; Vengris, M.; Armour, E. A.; Byrnes, D. P.; Arif, R. A.; Lee, S. M.; Papasouliotis, G. D.

2014-01-01

We report on diffusion-driven and excitation-dependent carrier recombination rate in multiple InGaN/GaN quantum wells by using photoluminescence, light-induced absorption, and diffraction techniques. We demonstrate gradually increasing with excitation carrier diffusivity and its correlation with the recombination rate. At low carrier densities, an increase in radiative emission and carrier lifetime was observed due to partial saturation of non-radiative recombination centers. However, at carrier densities above ∼5 × 10 18  cm −3 , a typical value of photoluminescence efficiency droop, a further increase of diffusivity forces the delocalized carriers to face higher number of fast non-radiative recombination centers leading to an increase of non-radiative losses

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Aleksiejūnas, R.; Gelžinytė, K.; Nargelas, S., E-mail: saulius.nargelas@ff.vu.lt; Jarašiūnas, K. [Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio 9–III, 10222 Vilnius (Lithuania); Vengris, M. [Laser Research Center, Vilnius University, Saulėtekio 10, 10223 Vilnius (Lithuania); Armour, E. A.; Byrnes, D. P.; Arif, R. A.; Lee, S. M.; Papasouliotis, G. D. [Veeco Instruments, Turbodisc Operations, 394 Elizabeth Avenue, Somerset, New Jersey 08873 (United States)

2014-01-13

We report on diffusion-driven and excitation-dependent carrier recombination rate in multiple InGaN/GaN quantum wells by using photoluminescence, light-induced absorption, and diffraction techniques. We demonstrate gradually increasing with excitation carrier diffusivity and its correlation with the recombination rate. At low carrier densities, an increase in radiative emission and carrier lifetime was observed due to partial saturation of non-radiative recombination centers. However, at carrier densities above ∼5 × 10{sup 18} cm{sup −3}, a typical value of photoluminescence efficiency droop, a further increase of diffusivity forces the delocalized carriers to face higher number of fast non-radiative recombination centers leading to an increase of non-radiative losses.

Dynamos driven by poloidal flows in untwisted, curved and flat Riemannian diffusive flux tubes

International Nuclear Information System (INIS)

De Andrade, L.C.G.

2010-01-01

Recently Vishik anti-fast dynamo theorem has been tested against non-stretching flux tubes (Phys. Plasmas, 15 (2008)). In this paper, another anti dynamo theorem, called Cowling's theorem, which states that axisymmetric magnetic fields cannot support dynamo action, is carefully tested against thick tubular and curved Riemannian untwisted flows, as well as thin flux tubes in diffusive and diffusion less media. In the non-diffusive media Cowling's theorem is not violated in thin Riemann-flat untwisted flux tubes, where the Frenet curvature is negative. Nevertheless the diffusion action in the thin flux tube leads to a dynamo action driven by poloidal flows as shown by Love and Gubbins (Geophysical Res., 23 (1996) 857) in the context of geo dynamos. Actually it is shown that a slow dynamo action is obtained. In this case the Frenet and Riemann curvature still vanishes. In the case of magnetic filaments in diffusive media dynamo action is obtained when the Frenet scalar curvature is negative. Since the Riemann curvature tensor can be expressed in terms of the Frenet curvature of the magnetic flux tube axis, this result can be analogous to a recent result obtained by Chicone, Latushkin and Smith, which states that geodesic curvature in compact Riemannian manifolds can drive dynamo action in the manifold. It is also shown that in the absence of diffusion, magnetic energy does not grow but magnetic toroidal magnetic field can be generated by the poloidal field, what is called a plasma dynamo.

Peculiarities of neutron interaction with boron containing semiconductors

International Nuclear Information System (INIS)

Didyk, A.Yu.; ); Hofman, A.; Institute of Atomic Energy, Otwock/Swierk; Vlasukova, L.A.

2009-01-01

The results of point defect creation calculation in B 4 C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms ( 10 B) the damage creation by means of fission nuclear reaction fragments (alpha particles and 7 Li recoil nuclei) exceeds the damage created by fast neutrons (E n > 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment. (authors)

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Soret-driven double diffusive magneto-convection in couple stress liquid

Directory of Open Access Journals (Sweden)

Mishra P.

2012-07-01

Full Text Available The stability analysis of Soret driven double diffusive convection for electrically conducting couple stress liquid is investigated theoretically. The couple stress liquid is confined between two horizontal surfaces and a constant vertical magnetic field is applied across the surfaces. Linear stability analysis is used to investigate the effect of various parameters on the onset of convection. Effect of magnetic field on the onset of convection is presented by means of Chandrasekhar number. The problem is analyzed as a function of Chandrasekhar number (Q, positive and negative Soret parameter (S r and couple stress parameter (C, mainly. The results show that the Q, both positive and negative Sr and C delay the onset of convection. The effect of other parameters is also discussed in paper and shown by graphs.

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Band Gap Distortion in Semiconductors Strongly Driven by Intense Mid-Infrared Laser Fields

Science.gov (United States)

Kono, J.; Chin, A. H.

2000-03-01

Crystalline solids non-resonantly driven by intense time-periodic electric fields are predicted to exhibit unusual band-gap distortion.(e.g., Y. Yacoby, Phys. Rev. 169, 610 (1968); L.C.M. Miranda, Solid State Commun. 45, 783 (1983); J.Z. Kaminski, Acta Physica Polonica A 83, 495(1993).) Such non-perturbative effects have not been observed to date because of the unavoidable sample damage due to the very high intensity required using conventional lasers ( 1 eV photon energy). Here, we report the first clear evidence of laser-induced bandgap shrinkage in semiconductors under intense mid-infrared (MIR) laser fields. The use of long-wavelength light reduces the required intensity and prohibits strong interband absorption, thereby avoiding the damage problem. The significant sub-bandgap absorption persists only during the existence of the MIR laser pulse, indicating the virtual nature of the effect. We show that this particular example of non-perturbative behavior, known as the dynamical Franz-Keldysh effect, occurs when the effective ponderomotive potential energy is comparable to the photon energy of the applied field. This work was supported by ONR, NSF, JST and NEDO.

Nuclear relaxation in semiconductors doped with magnetic impurities

International Nuclear Information System (INIS)

Mel'nichuk, S.V.; Tovstyuk, N.K.

1984-01-01

The temperature and concentration dependences are investigated of the nuclear spin-lattice relaxation time with account of spin diffusion for degenerated and non-degenerated semicon- ductors doped with magnetic impurities. In case of the non-degenerated semiconductor the time is shown to grow with temperature, while in case of degenerated semiconductor it is practically independent of temperature. The impurity concentration growth results in decreasing the spin-lattice relaxation time

A Brief History of ... Semiconductors

Science.gov (United States)

Jenkins, Tudor

2005-01-01

The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

Quantitative autoradiography of semiconductor base material

International Nuclear Information System (INIS)

Treutler, H.C.; Freyer, K.

1983-01-01

Autoradiographic methods for the quantitative determination of elements interesting in semiconductor technology and their distribution in silicon are described. Whereas the local concentration and distribution of phosphorus has been determined with the aid of silver halide films the neutron-induced autoradiography has been applied in the case of boron. Silicon disks containing diffused phosphorus or implanted or diffused boron have been used as standard samples. Different possibilities of the quantitative evaluation of autoradiograms are considered and compared

Scaling Law for Cross-stream Diffusion in Microchannels under Combined Electroosmotic and Pressure Driven Flow.

Science.gov (United States)

Song, Hongjun; Wang, Yi; Pant, Kapil

2013-01-01

This paper presents an analytical study of the cross-stream diffusion of an analyte in a rectangular microchannel under combined electroosmotic flow (EOF) and pressure driven flow to investigate the heterogeneous transport behavior and spatially-dependent diffusion scaling law. An analytical model capable of accurately describing 3D steady-state convection-diffusion in microchannels with arbitrary aspect ratios is developed based on the assumption of the thin Electric Double Layer (EDL). The model is verified against high-fidelity numerical simulation in terms of flow velocity and analyte concentration profiles with excellent agreement (parametric analysis is then undertaken to interrogate the effect of the combined flow velocity field on the transport behavior in both the positive pressure gradient (PPG) and negative pressure gradient (NPG) cases. For the first time, the evolution from the spindle-shaped concentration profile in the PPG case, via the stripe-shaped profile (pure EOF), and finally to the butterfly-shaped profile in the PPG case is obtained using the analytical model along with a quantitative depiction of the spatially-dependent diffusion layer thickness and scaling law across a wide range of the parameter space.

Image classification using multiscale information fusion based on saliency driven nonlinear diffusion filtering.

Science.gov (United States)

Hu, Weiming; Hu, Ruiguang; Xie, Nianhua; Ling, Haibin; Maybank, Stephen

2014-04-01

In this paper, we propose saliency driven image multiscale nonlinear diffusion filtering. The resulting scale space in general preserves or even enhances semantically important structures such as edges, lines, or flow-like structures in the foreground, and inhibits and smoothes clutter in the background. The image is classified using multiscale information fusion based on the original image, the image at the final scale at which the diffusion process converges, and the image at a midscale. Our algorithm emphasizes the foreground features, which are important for image classification. The background image regions, whether considered as contexts of the foreground or noise to the foreground, can be globally handled by fusing information from different scales. Experimental tests of the effectiveness of the multiscale space for the image classification are conducted on the following publicly available datasets: 1) the PASCAL 2005 dataset; 2) the Oxford 102 flowers dataset; and 3) the Oxford 17 flowers dataset, with high classification rates.

Diffusion in Solids Fundamentals, Methods, Materials, Diffusion-Controlled Processes

CERN Document Server

Mehrer, Helmut

2007-01-01

Diffusion is a vital topic in solid-state physics and chemistry, physical metallurgy and materials science. Diffusion processes are ubiquitous in solids at elevated temperatures. A thorough understanding of diffusion in materials is crucial for materials development and engineering. This book first gives an account of the central aspects of diffusion in solids, for which the necessary background is a course in solid state physics. It then provides easy access to important information about diffuson in metals, alloys, semiconductors, ion-conducting materials, glasses and nanomaterials. Several diffusion-controlled phenomena, including ionic conduction, grain-boundary and dislocation pipe diffusion, are considered as well. Graduate students in solid-state physics, physical metallurgy, materials science, physical and inorganic chemistry or geophysics will benefit from this book as will physicists, chemists, metallurgists, materials engineers in academic and industrial research laboratories.

Interface Structure of MoO3 on Organic Semiconductors

Science.gov (United States)

White, Robin T.; Thibau, Emmanuel S.; Lu, Zheng-Hong

2016-01-01

We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion. PMID:26880185

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Processing of insulators and semiconductors

Science.gov (United States)

Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

2015-06-16

A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

A non-linear optimal control problem in obtaining homogeneous concentration for semiconductor materials

International Nuclear Information System (INIS)

Huang, C.-H.; Li, J.-X.

2006-01-01

A non-linear optimal control algorithm is examined in this study for the diffusion process of semiconductor materials. The purpose of this algorithm is to estimate an optimal control function such that the homogeneity of the concentration can be controlled during the diffusion process and the diffusion-induced stresses for the semiconductor materials can thus be reduced. The validation of this optimal control analysis utilizing the conjugate gradient method of minimization is analysed by using numerical experiments. Three different diffusion processing times are given and the corresponding optimal control functions are to be determined. Results show that the diffusion time can be shortened significantly by applying the optimal control function at the boundary and the homogeneity of the concentration is also guaranteed. This control function can be obtained within a very short CPU time on a Pentium III 600 MHz PC

Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

International Nuclear Information System (INIS)

Liu, Siyang; Zhang, Chunwei; Sun, Weifeng; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu

2014-01-01

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic

Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

Energy Technology Data Exchange (ETDEWEB)

Liu, Siyang; Zhang, Chunwei; Sun, Weifeng, E-mail: swffrog@seu.edu.cn [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China); Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu [CSMC Technologies Corporation, Wuxi 214061 (China)

2014-04-14

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

Milstein Approximation for Advection-Diffusion Equations Driven by Multiplicative Noncontinuous Martingale Noises

International Nuclear Information System (INIS)

Barth, Andrea; Lang, Annika

2012-01-01

In this paper, the strong approximation of a stochastic partial differential equation, whose differential operator is of advection-diffusion type and which is driven by a multiplicative, infinite dimensional, càdlàg, square integrable martingale, is presented. A finite dimensional projection of the infinite dimensional equation, for example a Galerkin projection, with nonequidistant time stepping is used. Error estimates for the discretized equation are derived in L 2 and almost sure senses. Besides space and time discretizations, noise approximations are also provided, where the Milstein double stochastic integral is approximated in such a way that the overall complexity is not increased compared to an Euler–Maruyama approximation. Finally, simulations complete the paper.

Geometry-Driven-Diffusion filtering of MR Brain Images using dissimilarities and optimal relaxation parameter

Energy Technology Data Exchange (ETDEWEB)

Bajla, Ivan [Austrian Research Centres Sibersdorf, Department of High Performance Image Processing and Video-Technology, A-2444 Seibersdorf (Austria); Hollander, Igor [Institute of information Processing, Austrian Academy of Sciences, Sonnenfelsgasse 19/2, 1010 Wien (Austria)

1999-12-31

A novel method of local adapting of the conductance using a pixel dissimilarity measure is developed. An alternative processing methodology is proposed, which is based on intensity gradient histogram calculated for region interiors and boundaries of a phantom which models real MR brain scans. It involves a specific cost function suitable for the calculation of the optimum relaxation parameter Kopt and for the selection of the optimal exponential conductance. Computer experiments for locally adaptive geometry-driven-diffusion filtering of an MR brain phantom have been performed and evaluated. (authors) 6 refs., 3 figs.2 tabs.

Geometry-Driven-Diffusion filtering of MR Brain Images using dissimilarities and optimal relaxation parameter

International Nuclear Information System (INIS)

Bajla, Ivan; Hollander, Igor

1998-01-01

A novel method of local adapting of the conductance using a pixel dissimilarity measure is developed. An alternative processing methodology is proposed, which is based on intensity gradient histogram calculated for region interiors and boundaries of a phantom which models real MR brain scans. It involves a specific cost function suitable for the calculation of the optimum relaxation parameter Kopt and for the selection of the optimal exponential conductance. Computer experiments for locally adaptive geometry-driven-diffusion filtering of an MR brain phantom have been performed and evaluated. (authors)

Soft X-ray spectromicroscopy and application to semiconductor microstructure characterization

International Nuclear Information System (INIS)

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.; Warwick, A.; Padmore, H.A.; Triplett, B.B.

1997-01-01

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved by conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at thr Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An Advanced Light Source μ-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers. (author)

Master stability functions reveal diffusion-driven pattern formation in networks

Science.gov (United States)

Brechtel, Andreas; Gramlich, Philipp; Ritterskamp, Daniel; Drossel, Barbara; Gross, Thilo

2018-03-01

We study diffusion-driven pattern formation in networks of networks, a class of multilayer systems, where different layers have the same topology, but different internal dynamics. Agents are assumed to disperse within a layer by undergoing random walks, while they can be created or destroyed by reactions between or within a layer. We show that the stability of homogeneous steady states can be analyzed with a master stability function approach that reveals a deep analogy between pattern formation in networks and pattern formation in continuous space. For illustration, we consider a generalized model of ecological meta-food webs. This fairly complex model describes the dispersal of many different species across a region consisting of a network of individual habitats while subject to realistic, nonlinear predator-prey interactions. In this example, the method reveals the intricate dependence of the dynamics on the spatial structure. The ability of the proposed approach to deal with this fairly complex system highlights it as a promising tool for ecology and other applications.

Effects of electric field and magnetic induction on spin injection into organic semiconductors

International Nuclear Information System (INIS)

Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

2011-01-01

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility

KAUST Repository

Dacuñ a, Javier; Salleo, Alberto

2011-01-01

We have developed and have applied a mobility edge model that takes drift and diffusion currents to characterize the space-charge-limited current in organic semiconductors into account. The numerical solution of the drift-diffusion equation allows

Donor-driven spin relaxation in multivalley semiconductors.

Science.gov (United States)

Song, Yang; Chalaev, Oleg; Dery, Hanan

2014-10-17

The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

Controlling Molecular Doping in Organic Semiconductors.

Science.gov (United States)

Jacobs, Ian E; Moulé, Adam J

2017-11-01

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diffusion tensor magnetic resonance imaging driven growth modeling for radiotherapy target definition in glioblastoma

DEFF Research Database (Denmark)

Jensen, Morten B; Guldberg, Trine L; Harbøll, Anja

2017-01-01

the microscopic tumor cell spread. Gliomas favor spread along the white matter fiber tracts. Tumor growth models incorporating the MRI diffusion tensors (DTI) allow to account more consistently for the glioma growth. The aim of the study was to investigate the potential of a DTI driven growth model to improve...... target definition in glioblastoma (GBM). MATERIAL AND METHODS: Eleven GBM patients were scanned using T1w, T2w FLAIR, T1w + Gd and DTI. The brain was segmented into white matter, gray matter and cerebrospinal fluid. The Fisher-Kolmogorov growth model was used assuming uniform proliferation...

Method to induce a conductivity type in a semiconductor

International Nuclear Information System (INIS)

Aboaf, J.A.; Sedgwick, T.O.

1977-01-01

The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

CERN Multimedia

Wagner, F E

2002-01-01

Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization

International Nuclear Information System (INIS)

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z.

1996-01-01

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS(mu)-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers

Phase field study of interfacial diffusion-driven spheroidization in a composite comprized of two mutually insoluble phases

Energy Technology Data Exchange (ETDEWEB)

Tian, Liang [Ames Laboratory; Russell, Alan [Ames Laboratory

2014-03-27

The phase field approach is a powerful computational technique to simulate morphological and microstructural evolution at the mesoscale. Spheroidization is a frequently observed morphological change of mesoscale heterogeneous structures during annealing. In this study, we used the diffuse interface phase field method to investigate the interfacial diffusion-driven spheroidization of cylindrical rod structures in a composite comprised of two mutually insoluble phases in a two-dimensional case. Perturbation of rod radius along a cylinder's axis has long been known to cause the necessary chemical potential gradient that drives spheroidization of the rod by Lord Rayleigh's instability theory. This theory indicates that a radius perturbation wavelength larger than the initial rod circumference would lead to cylindrical spheroidization. We investigated the effect of perturbation wavelength, interfacial energy, volume diffusion, phase composition, and interfacial percentage on the kinetics of spheroidization. The results match well with both the Rayleigh's instability criterion and experimental observations.

Pr-O-Al-N dielectrics for metal insulator semiconductor stacks

Energy Technology Data Exchange (ETDEWEB)

Henkel, Karsten; Torche, Mohamed; Sohal, Rakesh; Karavaev, Konstantin; Burkov, Yevgen; Schwiertz, Carola; Schmeisser, Dieter [Brandenburg University of Technology, Chair of Applied Physics and Sensors, K.-Wachsmann-Allee 1, 03046 Cottbus (Germany)

2011-02-15

This work focuses on praseodymium oxide films as a high-k material on silicon and silicon carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated to spectroscopic findings on this material system. Strong interfacial reactions between the praseodymium oxide and the semiconductor as well as silicon inter-diffusion into the high-k material are observed. The importance of a buffer layer is discussed and its optimisation is addressed, too. In particular the improvement of the performance by the introduction of an aluminium oxynitride buffer layer, which acts as an inter-diffusion barrier and reduces the leakage current, the interface state density and the equivalent oxide thickness is demonstrated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Measuring minority-carrier diffusion length using a Kelvin probe force microscope

International Nuclear Information System (INIS)

Shikler, R.; Fried, N.; Meoded, T.; Rosenwaks, Y.

2000-01-01

A method based on Kelvin probe force microscopy for measuring minority-carrier diffusion length in semiconductors is described. The method is based on measuring the surface photovoltage between the tip of an atomic force microscope and the surface of an illuminated semiconductor junction. The photogenerated carriers diffuse to the junction and change the contact potential difference between the tip and the sample, as a function of the distance from the junction. The diffusion length L is then obtained by fitting the measured contact potential difference using the minority-carrier continuity equation. The method was applied to measurements of electron diffusion length in GaP pn and Schottky junctions. The measured diffusion length was found to be ∼2 μm, in good agreement with electron beam induced current measurements

Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.

1992-01-01

This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

Spin-relaxation time in the impurity band of wurtzite semiconductors

Science.gov (United States)

Tamborenea, Pablo I.; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo A.

2017-09-01

The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.

Diffusion between evolving interfaces

International Nuclear Information System (INIS)

Juntunen, Janne; Merikoski, Juha

2010-01-01

Diffusion in an evolving environment is studied by continuous-time Monte Carlo simulations. Diffusion is modeled by continuous-time random walkers on a lattice, in a dynamic environment provided by bubbles between two one-dimensional interfaces driven symmetrically towards each other. For one-dimensional random walkers constrained by the interfaces, the bubble size distribution dominates diffusion. For two-dimensional random walkers, it is also controlled by the topography and dynamics of the interfaces. The results of the one-dimensional case are recovered in the limit where the interfaces are strongly driven. Even with simple hard-core repulsion between the interfaces and the particles, diffusion is found to depend strongly on the details of the dynamical rules of particles close to the interfaces.

Manufacture of ribbon and solar cells of material of semiconductor grade

International Nuclear Information System (INIS)

1980-01-01

A method is described of producing ribbon-like substantially monocrystalline bodies of silicon or other materials of semiconductor grade suitable for use in solar cells or other semiconductor devices. A tube of the material is made and a photovoltaic junction formed in it. The tube is then divided lengthwise into a number of ribbon-like bodies. The photovoltaic junction can be formed either by diffusion or by ion-implantation. (U.K.)

Centimetre-scale electron diffusion in photoactive organic heterostructures

Science.gov (United States)

Burlingame, Quinn; Coburn, Caleb; Che, Xiaozhou; Panda, Anurag; Qu, Yue; Forrest, Stephen R.

2018-02-01

The unique properties of organic semiconductors, such as flexibility and lightness, are increasingly important for information displays, lighting and energy generation. But organics suffer from both static and dynamic disorder, and this can lead to variable-range carrier hopping, which results in notoriously poor electrical properties, with low electron and hole mobilities and correspondingly short charge-diffusion lengths of less than a micrometre. Here we demonstrate a photoactive (light-responsive) organic heterostructure comprising a thin fullerene channel sandwiched between an electron-blocking layer and a blended donor:C70 fullerene heterojunction that generates charges by dissociating excitons. Centimetre-scale diffusion of electrons is observed in the fullerene channel, and this can be fitted with a simple electron diffusion model. Our experiments enable the direct measurement of charge diffusivity in organic semiconductors, which is as high as 0.83 ± 0.07 square centimetres per second in a C60 channel at room temperature. The high diffusivity of the fullerene combined with the extraordinarily long charge-recombination time yields diffusion lengths of more than 3.5 centimetres, orders of magnitude larger than expected for an organic system.

Radiation effects in technologies of semiconductor materials and devises

International Nuclear Information System (INIS)

Korshunov, F.P.; Bogatyrev, Yu.V.; Lastovskij, S.B.; Marchenko, I.G.; Zhdanovich, N.E.

2003-01-01

In the paper were considered the physical basics and practical results of using of penetrating radiations in technologies of nuclear transmutation of semiconductor materials (Si, GaAs) as well as in production of semiconductor devices including high-power silicon diodes, thyristors and transistors. It is shown the high efficiency of radiation technology for increasing of electronic device speed, exclusion of technological operations such as gold or platinum diffusions, increase of quality, decrease of prime cost and increase of good-to-bad device ratio yield

Finite element method for simulation of the semiconductor devices

International Nuclear Information System (INIS)

Zikatanov, L.T.; Kaschiev, M.S.

1991-01-01

An iterative method for solving the system of nonlinear equations of the drift-diffusion representation for the simulation of the semiconductor devices is worked out. The Petrov-Galerkin method is taken for the discretization of these equations using the bilinear finite elements. It is shown that the numerical scheme is a monotonous one and there are no oscillations of the solutions in the region of p-n transition. The numerical calculations of the simulation of one semiconductor device are presented. 13 refs.; 3 figs

Radiation-enhanced diffusion in metals and alloys

International Nuclear Information System (INIS)

Lam, N.Q.; Rothman, S.J.

1975-01-01

Some phenomena that involves diffusion during irradiation include fission-product redistribution in reactor fuels, defect clustering in CTR walls or fast-reactor cladding, smearing-out of gradients in ion-implanted semiconductors, and microstructure development in a HVEM. This paper is a review of the basics of radiation-enhanced diffusion (REM). The present status of REM today is somewhat the same as diffusion in the 1940's, and recommendations are made for further work. 105 references

Diffusive instabilities in hyperbolic reaction-diffusion equations

Science.gov (United States)

Zemskov, Evgeny P.; Horsthemke, Werner

2016-03-01

We investigate two-variable reaction-diffusion systems of the hyperbolic type. A linear stability analysis is performed, and the conditions for diffusion-driven instabilities are derived. Two basic types of eigenvalues, real and complex, are described. Dispersion curves for both types of eigenvalues are plotted and their behavior is analyzed. The real case is related to the Turing instability, and the complex one corresponds to the wave instability. We emphasize the interesting feature that the wave instability in the hyperbolic equations occurs in two-variable systems, whereas in the parabolic case one needs three reaction-diffusion equations.

100% spin accumulation in non-half-metallic ferromagnet-semiconductor junctions

International Nuclear Information System (INIS)

Petukhov, A G; Niggemann, J; Smelyanskiy, V N; Osipov, V V

2007-01-01

We show that the spin polarization of electron density in non-magnetic degenerate semiconductors can achieve 100%. The effect of 100% spin accumulation does not require a half-metallic ferromagnetic contact and can be realized in ferromagnet-semiconductor FM-n + -n junctions even at moderate spin selectivity of the FM-n + contact when the electrons with spin 'up' are extracted from n semiconductor through the heavily doped n + layer into the ferromagnet and the electrons with spin 'down' are accumulated near the n + -n interface. We derived a general equation relating spin polarization of the current to that of the electron density in non-magnetic semiconductors. We found that the effect of complete spin polarization is achieved near the n + -n interface when the concentration of the spin 'up' electrons tends to zero in this region while the diffusion current of these electrons remains finite

Defects and diffusion in semiconductors XIII an annual retrospective

CERN Document Server

Fisher, D J

2011-01-01

This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: ""Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide"" (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), ""Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles"" (M.Ragam, N.Sankar, K.Ramachandran), ""The Effect of a Light Impurity on the Elec

Temperature-dependent built-in potential in organic semiconductor devices

NARCIS (Netherlands)

Kemerink, M.; Kramer, J.M.; Gommans, H.H.P.; Janssen, R.A.J.

2006-01-01

The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density

Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

International Nuclear Information System (INIS)

Kozlov, V.A.; Kozlovski, V.V.

2001-01-01

One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation

An effective pair potential for liquid semiconductor, Se: Structure and ...

Indian Academy of Sciences (India)

This model potential is then used to describe through low-order perturbation theory, the structure and related dynamical properties like self-diffusion coefficient and shear viscosity of this complex liquid over a wide range of temperatures. Keywords. Liquid semiconductor; pair potential; structure and dynamical properties.

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

Science.gov (United States)

El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

2015-12-16

Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

Science.gov (United States)

Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

2015-09-15

Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

Diffusion and drift of charges in semiconductor detectors

International Nuclear Information System (INIS)

Meidinger, N.

1991-01-01

For this analysis, a fully depleteable pn-CCD (a novel, energy and local resolution semiconductor using the drift chamber principle) has been tested for verification at different temperatures, photon energies, and drift times, including theoretical calculations. Experimental results are in good agreement with calculated data, and deviations (≤11%) have been understood to an extent that proposals can be made for improving the accuracy. Charge splitting has been found to be reduced in the case of reduced charge collecting areas, i.e. for example at lower temperatures, or with shorter drift times. This effect is also reduced in the case of larger charge collecting areas (pixels). With the given topology of the cell structure, the charge splitting can be much more strongly suppressed as compared to other X-ray CCD design types. (orig.) [de

Diffusion tensor magnetic resonance imaging driven growth modeling for radiotherapy target definition in glioblastoma.

Science.gov (United States)

Jensen, Morten B; Guldberg, Trine L; Harbøll, Anja; Lukacova, Slávka; Kallehauge, Jesper F

2017-11-01

The clinical target volume (CTV) in radiotherapy is routinely based on gadolinium contrast enhanced T1 weighted (T1w + Gd) and T2 weighted fluid attenuated inversion recovery (T2w FLAIR) magnetic resonance imaging (MRI) sequences which have been shown to over- or underestimate the microscopic tumor cell spread. Gliomas favor spread along the white matter fiber tracts. Tumor growth models incorporating the MRI diffusion tensors (DTI) allow to account more consistently for the glioma growth. The aim of the study was to investigate the potential of a DTI driven growth model to improve target definition in glioblastoma (GBM). Eleven GBM patients were scanned using T1w, T2w FLAIR, T1w + Gd and DTI. The brain was segmented into white matter, gray matter and cerebrospinal fluid. The Fisher-Kolmogorov growth model was used assuming uniform proliferation and a difference in white and gray matter diffusion of a ratio of 10. The tensor directionality was tested using an anisotropy weighting parameter set to zero (γ0) and twenty (γ20). The volumetric comparison was performed using Hausdorff distance, Dice similarity coefficient (DSC) and surface area. The median of the standard CTV (CTVstandard) was 180 cm 3 . The median surface area of CTVstandard was 211 cm 2 . The median surface area of respective CTV γ0 and CTV γ20 significantly increased to 338 and 376 cm 2 , respectively. The Hausdorff distance was greater than zero and significantly increased for both CTV γ0 and CTV γ20 with respective median of 18.7 and 25.2 mm. The DSC for both CTV γ0 and CTV γ20 were significantly below one with respective median of 0.74 and 0.72, which means that 74 and 72% of CTVstandard were included in CTV γ0 and CTV γ20, respectively. DTI driven growth models result in CTVs with a significantly increased surface area, a significantly increased Hausdorff distance and decreased overlap between the standard and model derived volume.

Diffusion and mixing in gravity-driven dense granular flows.

Science.gov (United States)

Choi, Jaehyuk; Kudrolli, Arshad; Rosales, Rodolfo R; Bazant, Martin Z

2004-04-30

We study the transport properties of particles draining from a silo using imaging and direct particle tracking. The particle displacements show a universal transition from superdiffusion to normal diffusion, as a function of the distance fallen, independent of the flow speed. In the superdiffusive (but sub-ballistic) regime, which occurs before a particle falls through its diameter, the displacements have fat-tailed and anisotropic distributions. In the diffusive regime, we observe very slow cage breaking and Péclet numbers of order 100, contrary to the only previous microscopic model (based on diffusing voids). Overall, our experiments show that diffusion and mixing are dominated by geometry, consistent with long-lasting contacts but not thermal collisions, as in normal fluids.

Impurity gettering in semiconductors

Science.gov (United States)

Sopori, Bhushan L.

1995-01-01

A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

Semiconductor surface diffusion: Nonthermal effects of photon illumination

International Nuclear Information System (INIS)

Ditchfield, R.; Llera-Rodriguez, D.; Seebauer, E. G.

2000-01-01

Nonthermal influences of photon illumination on surface diffusion at high temperatures have been measured experimentally. Activation energies and pre-exponential factors for diffusion of germanium, indium, and antimony on silicon change by up to 0.3 eV and two orders of magnitude, respectively, in response to illumination by photons having energies greater than the substrate band gap. The parameters decrease for n-type material and increase for p-type material. Aided by results from photoreflectance spectroscopy, we suggest that motion of the surface quasi-Fermi-level for minority carriers accounts for much of the effect by changing the charge states of surface vacancies. An additional adatom-vacancy complexation mechanism appears to operate on p-type substrates. The results have significant implications for aspects of microelectronics fabrication by rapid thermal processing that are governed by surface mobility. (c) 2000 The American Physical Society

Analysis of fluctuations in semiconductor devices

Science.gov (United States)

Andrei, Petru

The random nature of ion implantation and diffusion processes as well as inevitable tolerances in fabrication result in random fluctuations of doping concentrations and oxide thickness in semiconductor devices. These fluctuations are especially pronounced in ultrasmall (nanoscale) semiconductor devices when the spatial scale of doping and oxide thickness variations become comparable with the geometric dimensions of devices. In the dissertation, the effects of these fluctuations on device characteristics are analyzed by using a new technique for the analysis of random doping and oxide thickness induced fluctuations. This technique is universal in nature in the sense that it is applicable to any transport model (drift-diffusion, semiclassical transport, quantum transport etc.) and it can be naturally extended to take into account random fluctuations of the oxide (trapped) charges and channel length. The technique is based on linearization of the transport equations with respect to the fluctuating quantities. It is computationally much (a few orders of magnitude) more efficient than the traditional Monte-Carlo approach and it yields information on the sensitivity of fluctuations of parameters of interest (e.g. threshold voltage, small-signal parameters, cut-off frequencies, etc.) to the locations of doping and oxide thickness fluctuations. For this reason, it can be very instrumental in the design of fluctuation-resistant structures of semiconductor devices. Quantum mechanical effects are taken into account by using the density-gradient model as well as through self-consistent Poisson-Schrodinger computations. Special attention is paid to the presenting of the technique in a form that is suitable for implementation on commercial device simulators. The numerical implementation of the technique is discussed in detail and numerous computational results are presented and compared with those previously published in literature.

Direct observation of triplet energy transfer from semiconductor nanocrystals.

Science.gov (United States)

Mongin, Cédric; Garakyaraghi, Sofia; Razgoniaeva, Natalia; Zamkov, Mikhail; Castellano, Felix N

2016-01-22

Triplet excitons are pervasive in both organic and inorganic semiconductors but generally remain confined to the material in which they originate. We demonstrated by transient absorption spectroscopy that cadmium selenide semiconductor nanoparticles, selectively excited by green light, engage in interfacial Dexter-like triplet-triplet energy transfer with surface-anchored polyaromatic carboxylic acid acceptors, extending the excited-state lifetime by six orders of magnitude. Net triplet energy transfer also occurs from surface acceptors to freely diffusing molecular solutes, further extending the lifetime while sensitizing singlet oxygen in an aerated solution. The successful translation of triplet excitons from semiconductor nanoparticles to the bulk solution implies that such materials are generally effective surrogates for molecular triplets. The nanoparticles could thereby potentially sensitize a range of chemical transformations that are relevant for fields as diverse as optoelectronics, solar energy conversion, and photobiology. Copyright © 2016, American Association for the Advancement of Science.

From State Dependent Diffusion to Constant Diffusion in Stochastic Differential Equations by the Lamperti Transform

DEFF Research Database (Denmark)

Møller, Jan Kloppenborg; Madsen, Henrik

the Lamperti transform. This note gives an example driven introduction to the Lamperti transform. The general applicability of the Lamperti transform is limited to univariate diffusion processes, but for a restricted class of multivariate diffusion processes Lamperti type transformations are available...

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

Science.gov (United States)

Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

2017-02-01

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Defects and diffusion, theory & simulation II

CERN Document Server

Fisher, David J

2010-01-01

This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: ""Predicting Diffusion Coefficients from First Principles ..."" (Mantina, Chen & Liu), ""Gouge Assessment for Pipes ..."" (Meliani, Pluvinage & Capelle), ""Simulation of the Impact Behaviour of ... Hollow Sphere Structures"" (Ferrano, Speich, Rimkus, Merkel & Öchsner), ""Elastic-Plastic

An introduction to solid state diffusion

CERN Document Server

Borg, Richard J

2012-01-01

The energetics and mechanisms of diffusion control the kinetics of such diverse phenomena as the fabrication of semiconductors and superconductors, the tempering of steel, geological metamorphism, the precipitation hardening of nonferrous alloys and corrosion of metals and alloys. This work explains the fundamentals of diffusion in the solid state at a level suitable for upper-level undergraduate and beginning graduate students in materials science, metallurgy, mineralogy, and solid state physics and chemistry. A knowledge of physical chemistry such as is generally provided by a one-year under

Pacemaker-driven stochastic resonance on diffusive and complex networks of bistable oscillators

Energy Technology Data Exchange (ETDEWEB)

Perc, Matjaz; Gosak, Marko [Department of Physics, Faculty of Natural Sciences and Mathematics, University of Maribor, Koroska cesta 160, SI-2000 Maribor (Slovenia)], E-mail: matjaz.perc@uni-mb.si

2008-05-15

We study the phenomenon of stochastic resonance on diffusive, small-world and scale-free networks consisting of bistable overdamped oscillators. Important thereby is the fact that the external subthreshold periodic forcing is introduced only to a single oscillator of the network. Hence, the forcing acts as a pacemaker trying to impose its rhythm on the whole network through the unit to which it is introduced. Without the addition of additive spatiotemporal noise, however, the whole network, including the unit that is directly exposed to the pacemaker, remains trapped forever in one of the two stable steady states of the local dynamics. We show that the correlation between the frequency of subthreshold pacemaker activity and the response of the network is resonantly dependent on the intensity of additive noise. The reported pacemaker-driven stochastic resonance depends most significantly on the coupling strength and the underlying network structure. Namely, the outreach of the pacemaker obeys the classic diffusion law in the case of nearest-neighbor interactions, thus being proportional to the square root of the coupling strength, whereas it becomes superdiffusive by an appropriate small-world or scale-free topology of the interaction network. In particular, the scale-free topology is identified as being optimal for the dissemination of localized rhythmic activity across the whole network. Also, we show that the ratio between the clustering coefficient and the characteristic path length is the crucial quantity defining the ability of a small-world network to facilitate the outreach of the pacemaker-emitted subthreshold rhythm. We additionally confirm these findings by using the FitzHugh-Nagumo excitable system as an alternative to the bistable overdamped oscillator.

Pacemaker-driven stochastic resonance on diffusive and complex networks of bistable oscillators

International Nuclear Information System (INIS)

Perc, Matjaz; Gosak, Marko

2008-01-01

We study the phenomenon of stochastic resonance on diffusive, small-world and scale-free networks consisting of bistable overdamped oscillators. Important thereby is the fact that the external subthreshold periodic forcing is introduced only to a single oscillator of the network. Hence, the forcing acts as a pacemaker trying to impose its rhythm on the whole network through the unit to which it is introduced. Without the addition of additive spatiotemporal noise, however, the whole network, including the unit that is directly exposed to the pacemaker, remains trapped forever in one of the two stable steady states of the local dynamics. We show that the correlation between the frequency of subthreshold pacemaker activity and the response of the network is resonantly dependent on the intensity of additive noise. The reported pacemaker-driven stochastic resonance depends most significantly on the coupling strength and the underlying network structure. Namely, the outreach of the pacemaker obeys the classic diffusion law in the case of nearest-neighbor interactions, thus being proportional to the square root of the coupling strength, whereas it becomes superdiffusive by an appropriate small-world or scale-free topology of the interaction network. In particular, the scale-free topology is identified as being optimal for the dissemination of localized rhythmic activity across the whole network. Also, we show that the ratio between the clustering coefficient and the characteristic path length is the crucial quantity defining the ability of a small-world network to facilitate the outreach of the pacemaker-emitted subthreshold rhythm. We additionally confirm these findings by using the FitzHugh-Nagumo excitable system as an alternative to the bistable overdamped oscillator

Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes

DEFF Research Database (Denmark)

Sevincli, Haldun; Lehmann, T.; Ryndyk, D. A.

2013-01-01

as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic...

Data-Driven Diffusion Of Innovations: Successes And Challenges In 3 Large-Scale Innovative Delivery Models.

Science.gov (United States)

Dorr, David A; Cohen, Deborah J; Adler-Milstein, Julia

2018-02-01

Failed diffusion of innovations may be linked to an inability to use and apply data, information, and knowledge to change perceptions of current practice and motivate change. Using qualitative and quantitative data from three large-scale health care delivery innovations-accountable care organizations, advanced primary care practice, and EvidenceNOW-we assessed where data-driven innovation is occurring and where challenges lie. We found that implementation of some technological components of innovation (for example, electronic health records) has occurred among health care organizations, but core functions needed to use data to drive innovation are lacking. Deficits include the inability to extract and aggregate data from the records; gaps in sharing data; and challenges in adopting advanced data functions, particularly those related to timely reporting of performance data. The unexpectedly high costs and burden incurred during implementation of the innovations have limited organizations' ability to address these and other deficits. Solutions that could help speed progress in data-driven innovation include facilitating peer-to-peer technical assistance, providing tailored feedback reports to providers from data aggregators, and using practice facilitators skilled in using data technology for quality improvement to help practices transform. Policy efforts that promote these solutions may enable more rapid uptake of and successful participation in innovative delivery system reforms.

Exciton diffusion length in narrow bandgap polymers

NARCIS (Netherlands)

Mikhnenko, O.V.; Azimi, H.; Morana, M.; Blom, P.W.M.; Loi, M.A.

2012-01-01

We developed a new method to accurately extract the singlet exciton diffusion length in organic semiconductors by blending them with a low concentration of methanofullerene[6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The dependence of photoluminescence (PL) decay time on the fullerene

Solute coupled diffusion in osmotically driven membrane processes.

Science.gov (United States)

Hancock, Nathan T; Cath, Tzahi Y

2009-09-01

Forward osmosis (FO) is an emerging water treatment technology with potential applications in desalination and wastewater reclamation. In FO, water is extracted from a feed solution using the high osmotic pressure of a hypertonic solution that flows on the opposite side of a semipermeable membrane; however, solutes diffuse simultaneously through the membrane in both directions and may jeopardize the process. In this study, we have comprehensively explored the effects of different operating conditions on the forward diffusion of solutes commonly found in brackish water and seawater, and reverse diffusion of common draw solution solutes. Results show that reverse transport of solutes through commercially available FO membranes range between 80 mg to nearly 3,000 mg per liter of water produced. Divalent feed solutes have low permeation rates (less than 1 mmol/m2-hr) while monovalent ions and uncharged solutes exhibit higher permeation. Findings have significant implications on the performance and sustainability of the FO process.

Magnetic diffuse scattering

International Nuclear Information System (INIS)

Cable, J.W.

1987-01-01

The diffuse scattering of neutrons from magnetic materials provides unique and important information regarding the spatial correlations of the atoms and the spins. Such measurements have been extensively applied to magnetically ordered systems, such as the ferromagnetic binary alloys, for which the observed correlations describe the magnetic moment fluctuations associated with local environment effects. With the advent of polarization analysis, these techniques are increasingly being applied to study disordered paramagnetic systems such as the spin-glasses and the diluted magnetic semiconductors. The spin-pair correlations obtained are essential in understanding the exchange interactions of such systems. In this paper, we describe recent neutron diffuse scattering results on the atom-pair and spin-pair correlations in some of these disordered magnetic systems. 56 refs

Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

Radiotracer diffusion in semiconductors and metallic compounds using short-lived isotopes

CERN Multimedia

Deicher, M; Kronenberg, J; Wagner, F E

The transport of atoms in solids is of central importance for solid state physics, chemistry, metallurgy, and material sciences. Since the mobility of atoms in solids contributes to many physical phenomena the study of diffusion processes is of fundamental interest for solid state physics. Diffusion processes were frequently investigated using radioactive isotopes (radiotracers). The application of short-lived isotopes delivered at ISOLDE extends substantially the possibilities of investigating diffusion processes in solids. In particular, a new experimental set-up to be installed at ISOLDE in this year will enable the use of radioactive isotopes with half-lives down to minutes. Alternatively, in special cases diffusion processes can be investigated with help of hyperfine techniques on an atomic scale, like by perturbed $\\gamma \\gamma$-angular correlation (PAC). Here, the motion of the atom of interest becomes visible directly via characteristic changes in the measured PAC spectra.

Spin-drift transport in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong-4331 (Bangladesh)

2008-02-07

We present a study on spin transport in semiconductors under applied electric fields. Our experiments detect photoinjected electron spins and their relaxation during drift transport in intrinsic and moderately n-doped GaAs, based on the extraordinary Hall (eH) effect. For relatively low electric field (E), the optically spin-induced eH effect in n-doped GaAs is found to be enhanced with increasing doping density and not to depend much on E, indicating that a substantial amount of optical spin polarization is preserved during the drift transport in these extrinsic semiconductors. However, when the spin-oriented electrons are injected with a high E, a very significant decrease is observed in the eH voltage (V{sub eH}) due to an increase in the spin precession frequency of the hot electrons. Spin relaxation by the D'yakonov-Perel' mechanism is calculated, and is suggested to be the reason for such a rapid spin relaxation for hot electrons under a high E. However, in an intrinsic GaAs (i-GaAs), a much weaker V{sub eH} is observed and, as the electron spins scattered by holes due to the Coulomb interaction in i-GaAs, the spin relaxation by the Bir-Aronov-Pikus mechanism is considered. Skew scattering and side jump as possible mechanisms of the optically spin-induced transverse Hall currents are discussed. Based on a spin drift-diffusion model, drift and diffusion contributions to the V{sub eH} are examined. The results are also discussed in comparison with theoretical investigations.

Semiconductor Laser Multi-Spectral Sensing and Imaging

Directory of Open Access Journals (Sweden)

Han Q. Le

2010-01-01

Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Semiconductor laser multi-spectral sensing and imaging.

Science.gov (United States)

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Theory of ion-temperature-gradient-driven turbulence in tokamaks

International Nuclear Information System (INIS)

Lee, G.S.; Diamond, P.H.

1986-01-01

An analytic theory of ion-temperature-gradient-driven turbulence in tokamaks is presented. Energy-conserving, renormalized spectrum equations are derived and solved in order to obtain the spectra of stationary ion-temperature-gradient-driven turbulence. Corrections to mixing-length estimates are calculated explicitly. The resulting anomalous ion thermal diffusivity chi/sub i/ = 0.4[(π/2)ln(1 + eta/sub i/)] 2 [(1 + eta/sub i/)/tau] 2 rho/sub s/ 2 c/sub s//L/sub s/ is derived and is found to be consistent with experimentally-deduced thermal diffusivities. The associated electron thermal diffusivity and particle and heat-pinch velocities are also calculated. The effect of impurity gradients on saturated ion-temperature-gradient-driven turbulence is discussed and a related explanation of density profile steepening during Z-mode operation is proposed. 35 refs., 4 figs

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Particle diffusion in a spheromak

International Nuclear Information System (INIS)

Meyerhofer, D.D.; Levinton, F.M.; Yamada, M.

1988-01-01

The local carbon particle diffusion coefficient was measured in the Proto S-1/C spheromak using a test particle injection scheme. When the plasma was not in a force-free Taylor state, and when there were pressure gradients in the plasma, the particle diffusion was five times that predicted by Bohm and was consistent with collisional drift wave diffusion. The diffusion appears to be driven by correlations of the fluctuating electric field and density. During the decay phase of the discharge when the plasma was in the Taylor state, the diffusion coefficient of the carbon was classical. 23 refs., 4 figs

Leukemia and non-Hodgkin lymphoma in semiconductor industry workers in Korea.

Science.gov (United States)

Kim, Inah; Kim, Hyun J; Lim, Sin Y; Kongyoo, Jungok

2012-01-01

Reports of leukemia and non-Hodgkin lymphoma (NHL), cancers known to have a similar pathophysiology, among workers in the semiconductor industry have generated much public concern in Korea. This paper describes cases reported to the NGO Supporters for the Health and Rights of People in the Semiconductor Industry (SHARPs). We identified demographic characteristics, occupational, and disease history, for 17 leukemia and NHL cases from the Giheung Samsung semiconductor plant, diagnosed from November 2007 to January 2011. Patients were relatively young (mean = 28·5 years, SD = 6·5) at the time of diagnosis and the mean latency period was 104·3 months (SD = 65·8). Majority of the cases were fabrication operators (11 workers among 17) and 12 were hired before 2000. Six cases worked in the etching or diffusion process. The evidence to confirm the causal relationship between exposures in the semiconductor industry and leukemia or NHL remains insufficient and a more formal, independent study of the exposure-disease relationship in this occupation is needed. However, workers should be protected from the potential exposures immediately.

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Spin injection and transport in semiconductor and metal nanostructures

Science.gov (United States)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

Diffused sunlight driven highly synergistic pathway for complete mineralization of organic contaminants using reduced graphene oxide supported photocatalyst

Energy Technology Data Exchange (ETDEWEB)

Babu, Sundaram Ganesh; Ramalingam Vinoth [SRM Research Institute, SRM University, Kattankulathur 603203, Chennai, Tamilnadu (India); Neppolian, Bernaurdshaw, E-mail: neppolian.b@res.srmuniv.ac.in [SRM Research Institute, SRM University, Kattankulathur 603203, Chennai, Tamilnadu (India); Dionysiou, Dionysios D. [Environmental Engineering and Science Program, Department of Biomedical, Chemical and Environmental Engineering, University of Cincinnati, Cincinnati, OH 45221-0012 (United States); Ashokkumar, Muthupandian [The School of Chemistry, University of Melbourne, Parkville, Melbourne, Victoria 3010 (Australia)

2015-06-30

Highlights: • Diffused sunlight is firstly used as an effective source for the degradation of organics. • More than 10 fold synergistic effect is achieved by sono-photocatalysis. • rGO enhances the degradation efficiency up to 54% as compared with CuO–TiO{sub 2} alone. • Plausible mechanism and intermediates formed are supported with experimental studies. - Abstract: Diffused sunlight is found to be an effective light source for the efficient degradation and mineralization of organic pollutant (methyl orange as a probe) by sono-photocatalytic degradation using reduced graphene oxide (rGO) supported CuO–TiO{sub 2} photocatalyst. The prepared catalysts are characterized by XRD, XPS, UV–vis DRS, PL, photoelectrochemical, SEM-EDS and TEM. A 10 fold synergy is achieved for the first time by combining sonochemical and photocatalytic degradation under diffused sunlight. rGO loading augments the activity of bare CuO–TiO{sub 2} more than two fold. The ability of rGO in storing, transferring, and shuttling electrons at the heterojunction between TiO{sub 2} and CuO facilitates the separation of photogenerated electron–hole pairs, as evidenced by the photoluminescence results. The complete mineralization of MO and the by-products within a short span of time is confirmed by TOC analysis. Further, hydroxyl radical mediated degradation under diffused sunlight is confirmed by LC–MS. This system shows similar activity for the degradation of methylene blue and 4-chlorophenol indicating the versatility of the catalyst for the degradation of various pollutants. This investigation is likely to open new possibilities for the development of highly efficient diffused sunlight driven TiO{sub 2} based photocatalysts for the complete mineralization of organic contaminants.

Empirical molecular-dynamics study of diffusion in liquid semiconductors

Science.gov (United States)

Yu, W.; Wang, Z. Q.; Stroud, D.

1996-11-01

We report the results of an extensive molecular-dynamics study of diffusion in liquid Si and Ge (l-Si and l-Ge) and of impurities in l-Ge, using empirical Stillinger-Weber (SW) potentials with several choices of parameters. We use a numerical algorithm in which the three-body part of the SW potential is decomposed into products of two-body potentials, thereby permitting the study of large systems. One choice of SW parameters agrees very well with the observed l-Ge structure factors. The diffusion coefficients D(T) at melting are found to be approximately 6.4×10-5 cm2/s for l-Si, in good agreement with previous calculations, and about 4.2×10-5 and 4.6×10-5 cm2/s for two models of l-Ge. In all cases, D(T) can be fitted to an activated temperature dependence, with activation energies Ed of about 0.42 eV for l-Si, and 0.32 or 0.26 eV for two models of l-Ge, as calculated from either the Einstein relation or from a Green-Kubo-type integration of the velocity autocorrelation function. D(T) for Si impurities in l-Ge is found to be very similar to the self-diffusion coefficient of l-Ge. We briefly discuss possible reasons why the SW potentials give D(T)'s substantially lower than ab initio predictions.

A classical-quantum coupling strategy for a hierarchy of one dimensional models for semiconductors

OpenAIRE

Jourdana, Clément; Pietra, Paola; Vauchelet, Nicolas

2014-01-01

We consider one dimensional coupled classical-quantum models for quantum semiconductor device simulations. The coupling occurs in the space variable : the domain of the device is divided into a region with strong quantum effects (quantum zone) and a region where quantum effects are negligible (classical zone). In the classical zone, transport in diffusive approximation is modeled through diffusive limits of the Boltzmann transport equation. This leads to a hierarchy of classical model. The qu...

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

Science.gov (United States)

Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

2015-12-02

Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

Science.gov (United States)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

1988-01-01

Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

fdtd Semiconductor Microlaser Simulator v. 2.0

Energy Technology Data Exchange (ETDEWEB)

2009-01-29

This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

Stability of polarization in organic ferroelectric metal-insulator-semiconductor (MIS) structures

Energy Technology Data Exchange (ETDEWEB)

Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Strasse 24-25, 14476, Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University, Dean Street, Bangor Gwynedd, LL57 1UT (United Kingdom)

2011-07-01

Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in such devices is confined to the interface between the insulator and the semiconductor, the focus of the present study was on the investigation of this region. Capacitance-voltage (C-V) measurements of all-organic MIS devices with poly(vinylidenefluoride- trifluoroethylene) (P(VDF-TrFE)) as gate insulator and poly(3-hexylthiophene)(P3HT) as semiconductor were carried out. When the structure was driven into depletion, a positive flat-band voltage shift was observed arising from the change in polarization state of the ferroelectric insulator. When driven into accumulation, the polarization was reversed. It is shown that both polarization states are stable. However, negative charge trapped at the interface during the depletion cycle masks the negative shift in flat-band voltage expected during the sweep to accumulation voltages. Measurements on P(VDF-TrFE)/P3HT based FeFETs yield further evidence for fixed charges at the interface. Output characteristics suggest the injection of negative charges into the interface region when a depletion voltage is applied between source and gate contact.

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

An integrated semiconductor device enabling non-optical genome sequencing.

Science.gov (United States)

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

Science.gov (United States)

Craco, L.; Laad, M. S.; Müller-Hartmann, E.

2003-12-01

Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

CERN Document Server

Pearton, Stephen

2013-01-01

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

Image Structure-Preserving Denoising Based on Difference Curvature Driven Fractional Nonlinear Diffusion

Directory of Open Access Journals (Sweden)

Xuehui Yin

2015-01-01

Full Text Available The traditional integer-order partial differential equations and gradient regularization based image denoising techniques often suffer from staircase effect, speckle artifacts, and the loss of image contrast and texture details. To address these issues, in this paper, a difference curvature driven fractional anisotropic diffusion for image noise removal is presented, which uses two new techniques, fractional calculus and difference curvature, to describe the intensity variations in images. The fractional-order derivatives information of an image can deal well with the textures of the image and achieve a good tradeoff between eliminating speckle artifacts and restraining staircase effect. The difference curvature constructed by the second order derivatives along the direction of gradient of an image and perpendicular to the gradient can effectively distinguish between ramps and edges. Fourier transform technique is also proposed to compute the fractional-order derivative. Experimental results demonstrate that the proposed denoising model can avoid speckle artifacts and staircase effect and preserve important features such as curvy edges, straight edges, ramps, corners, and textures. They are obviously superior to those of traditional integral based methods. The experimental results also reveal that our proposed model yields a good visual effect and better values of MSSIM and PSNR.

Intra-regional Diffusion of Spectrum License Allocation Policies

DEFF Research Database (Denmark)

Pogrebnyakov, Nicolai; Maitland, Carleen F.

2013-01-01

-depth qualitative analyses to compare effects of various diffusion mechanisms; diffusion of spectrum license allocation policies at the regional level was more strongly driven by a policy’s likely effectiveness, as compared to potential payoffs for policymakers; and conversely, at the national level diffusion...... regions. Design/methodology/approach – A qualitative comparative case method is used. Cases are developed from secondary data from the European Union and South America, and analyzed at the national and regional levels. Findings – The results suggest: the expected utility model can be used for in...... was driven by both payoffs for the policymakers and likely policy effectiveness. Originality/value – The two academic contributions of the paper are its expansion of a unified policy diffusion model to simultaneously account for regional and national levels of governance, as well as for technological change...

Diffusion of zinc into an unpassivated surface of indium phosphide

International Nuclear Information System (INIS)

Budko, T.O.; Gushchinskaya, E.V.; Emelyanenko, Yu.S.; Malyshev, S.A.

1989-01-01

Peculiarities are studied of the diffusion of Zn into an unpassivated surface of InP in an open gasflow system. In the region where the carrier concentration profile is described by an erfc (error function compliment), the diffusion coefficient and activation energy are determined. It is shown that thermal processes cause changes in the charge state of Zn in InP which result in a variation of the carrier profile in the semiconductor. (author)

A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

International Nuclear Information System (INIS)

Park, Mun-Soo; Na, Inmook; Wie, Chu R.

2005-01-01

n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement

Purcell effect in an organic-inorganic halide perovskite semiconductor microcavity system

International Nuclear Information System (INIS)

Wang, Jun; Wang, Yafeng; Hu, Tao; Wu, Lin; Shen, Xuechu; Chen, Zhanghai; Cao, Runan; Xu, Fei; Da, Peimei; Zheng, Gengfeng; Lu, Jian

2016-01-01

Organic-inorganic halide perovskite semiconductors with the attractive physics properties, including strong photoluminescence (PL), huge oscillator strengths, and low nonradiative recombination losses, are ideal candidates for studying the light-matter interaction in nanostructures. Here, we demonstrate the coupling of the exciton state and the cavity mode in the lead halide perovskite microcavity system at room temperature. The Purcell effect in the coupling system is clearly observed by using angle-resolved photoluminescence spectra. Kinetic analysis based on time-resolved PL reveals that the spontaneous emission rate of the halide perovskite semiconductor is significantly enhanced at resonance of the exciton energy and the cavity mode. Our results provide the way for developing electrically driven organic polariton lasers, optical devices, and on-chip coherent quantum light sources

Diffusion-driven magnesium and iron isotope fractionation in Hawaiian olivine

Science.gov (United States)

Teng, F.-Z.; Dauphas, N.; Helz, R.T.; Gao, S.; Huang, S.

2011-01-01

Diffusion plays an important role in Earth sciences to estimate the timescales of geological processes such as erosion, sediment burial, and magma cooling. In igneous systems, these diffusive processes are recorded in the form of crystal zoning. However, meaningful interpretation of these signatures is often hampered by the fact that they cannot be unambiguously ascribed to a single process (e.g., magmatic fractionation, diffusion limited transport in the crystal or in the liquid). Here we show that Mg and Fe isotope fractionations in olivine crystals can be used to trace diffusive processes in magmatic systems. Over sixty olivine fragments from Hawaiian basalts show isotopically fractionated Mg and Fe relative to basalts worldwide, with up to 0.4??? variation in 26Mg/24Mg ratios and 1.6??? variation in 56Fe/54Fe ratios. The linearly and negatively correlated Mg and Fe isotopic compositions [i.e., ??56Fe=(??3.3??0.3)????26Mg], co-variations of Mg and Fe isotopic compositions with Fe/Mg ratios of olivine fragments, and modeling results based on Mg and Fe elemental profiles demonstrate the coupled Mg and Fe isotope fractionation to be a manifestation of Mg-Fe inter-diffusion in zoned olivines during magmatic differentiation. This characteristic can be used to constrain the nature of mineral zoning in igneous and metamorphic rocks, and hence determine the residence times of crystals in magmas, the composition of primary melts, and the duration of metamorphic events. With improvements in methodology, in situ isotope mapping will become an essential tool of petrology to identify diffusion in crystals. ?? 2011 Elsevier B.V.

Modelling of dc characteristics for granular semiconductors

International Nuclear Information System (INIS)

Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

2010-01-01

The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

Modelling of dc characteristics for granular semiconductors

Energy Technology Data Exchange (ETDEWEB)

Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

2010-11-01

The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

Contribution to the study of rectification at the metal-semiconductor contact: analysis of aging in silicon Schottky diodes

International Nuclear Information System (INIS)

Ponpon, J.-P.

1979-01-01

The formation of the barrier height and the aging of metal-semiconductor contacts during exposure to air have been studied. The evolution of the electrical characteristics, especially the barrier height, of silicon Schottky diodes results from the diffusion of oxygen through the electrode and its accumulation at the interface. The diffusion coefficient of oxygen has been deduced for each metal used. In a first step the oxygen neutralize a fixed positive charge which remains at the semiconductor surface after etching; then, as silicon is oxidized, a MIS device is formed. Similar results have been obtained in the case of germanium, while no aging appears with cadmium telluride. In this case the barrier height seems to be determined by chemical reactions at the interface [fr

Effects of the inversion layer thickness and 10B distribution in it on the characteristics of ion-doped semiconductor neutron counters

International Nuclear Information System (INIS)

Diasamidze, Eh.M.; Solov'ev, Yu.A.; Shmakov, A.N.

1984-01-01

The technique for calculating the dependence of energy spectrum of the 10 B(n, α) 7 Li reaction products in the thickness of the inversion layer in a semiconductor counter fabricated using the diffusion method is proposed. The inversion layer is formed as a result of the 10 B ion implantation into n-type silicon. The cases of uniform and Gaussian distributions of 10 B impurity are considered. Corrections for neutron fluence calculation by α-peak, taking into account α-particle absorption in the inversion layer are obtained. It is concluded that the suggested calculational technique can be used for semiconductor counters fabricated by the diffusion method

Efficient semiconductor multicycle terahertz pulse source

Science.gov (United States)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

Quantitative autoradiography of semiconductor materials by means of diffused phosphorus standards

International Nuclear Information System (INIS)

Treutler, H.C.; Freyer, K.

1983-01-01

A suitable standard sample was developed and tested on the basis of phosphorus for the quantitative autoradiography of elements of interest in semiconductor technology. By the aid of silicon disks with a phosphorus concentration of 6x10 17 atomsxcm - 2 the error of the quantitative autoradiogprahic method is determined. The relative mean error of the density measurement is at best +-4%; the relative mean error of the determination of phosphorus concentration by use of an error-free standard sample is about +-15%. The method will be extended to other elements by use of this standard sample of phosphorus. (author)

Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

Science.gov (United States)

Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

2014-07-16

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of semiconductor electronics

International Nuclear Information System (INIS)

Bardeen, John.

1977-01-01

In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

Cosmic ray driven outflows in an ultraluminous galaxy

Science.gov (United States)

Fujita, Akimi; Mac Low, Mordecai-Mark

2018-06-01

In models of galaxy formation, feedback driven both by supernova (SN) and active galactic nucleus is not efficient enough to quench star formation in massive galaxies. Models of smaller galaxies have suggested that cosmic rays (CRs) play a major role in expelling material from the star-forming regions by diffusing SN energy to the lower density outskirts. We therefore run gas dynamical simulations of galactic outflows from a galaxy contained in a halo with 5 × 1012 M⊙ that resembles a local ultraluminous galaxy, including both SN thermal energy and a treatment of CRs using the same diffusion approximation as Salem & Bryan. We find that CR pressure drives a low-density bubble beyond the edge of the shell swept up by thermal pressure, but the main bubble driven by SN thermal pressure overtakes it later, which creates a large-scale biconical outflow. CRs diffusing into the disc are unable to entrain its gas in the outflows, yielding a mass-loading rate of only ˜ 0.1 per cent with varied CR diffusion coefficients. We find no significant difference in mass-loading rates in SN-driven outflows with or without CR pressure. Our simulations strongly suggest that it is hard to drive a heavily mass-loaded outflow with CRs from a massive halo potential, although more distributed star formation could lead to a different result.

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

Science.gov (United States)

Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

2014-09-24

Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

Directory of Open Access Journals (Sweden)

Beata Bajorowicz

2014-09-01

Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Diffusion of elements and vacancies in multi-component systems

Czech Academy of Sciences Publication Activity Database

Fischer, F. D.; Svoboda, Jiří

2014-01-01

Roč. 60, MAR (2014), s. 338-367 ISSN 0079-6425 Institutional support: RVO:68081723 Keywords : multi-component diffusion * vacancy activity * manning theory * stress-driven diffusion Subject RIV: BJ - Thermodynamics Impact factor: 27.417, year: 2014

In Situ Fluorine Doping of TiO2 Superstructures for Efficient Visible-Light Driven Hydrogen Generation.

Science.gov (United States)

Zhang, Peng; Tachikawa, Takashi; Fujitsuka, Mamoru; Majima, Tetsuro

2016-03-21

With the aid of breakthroughs in nanoscience and nanotechnology, it is imperative to develop metal oxide semiconductors through visible light-driven hydrogen generation. In this study, TiOF2 was incorporated as an n-type F-dopant source to TiO2 mesocrystals (TMCs) with visible-light absorption during the topotactic transformation. The crystal growth, structural change, and dynamic morphological evolution, from the initial intermediate NH4 TiOF3 to HTiOF3, TiOF2, and F-doped TMCs, were verified through in situ temperature-dependent techniques to elucidate the doping mechanism from intermediate TiOF2. The visible-light efficiencies of photocatalytic hydrogen were dependent on the contents of the dopant as compared with the pure TMC and a controled reference. Using femtosecond time-resolved diffuse reflectance spectroscopy, the charge-transfer dynamics were monitored to confirm the improvement of charge separation after doping. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microscopic origin and macroscopic implications of lane formation in mixtures of oppositely-driven particles

Science.gov (United States)

Whitelam, Stephen

Colloidal particles of two types, driven in opposite directions, can segregate into lanes. I will describe some results on this phenomenon obtained by simple physical arguments and computer simulations. Laning results from rectification of diffusion on the scale of a particle diameter: oppositely-driven particles must, in the time taken to encounter each other in the direction of the drive, diffuse in the perpendicular direction by about one particle diameter. This geometric constraint implies that the diffusion constant of a particle, in the presence of those of the opposite type, grows approximately linearly with Peclet number, a prediction confirmed by our numerics. Such environment-dependent diffusion is statistically similar to an effective interparticle attraction; consistent with this observation, we find that oppositely-driven colloids display features characteristic of the simplest model system possessing both interparticle attractions and persistent motion, the driven Ising lattice gas. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

Design and simulation of a heat transformer of a directly solar-driven diffusion absorption chiller; Auslegung und Simulation von Waermeuebertragern einer direkt solarthermisch angetriebenen Diffusions-Absorptionskaeltemaschine

Energy Technology Data Exchange (ETDEWEB)

Hong, Josua; Schmid, Fabian; Spindler, Klaus [Stuttgart Univ. (DE). Inst. fuer Thermodynamik und Waermetechnik (ITW)

2011-07-01

The ITW is working on a directly solar-driven diffusion absorption chiller. Solar cooling offers vast potential for saving fossil resources, e.g. owing to the good temporal agreement between insolation and cold demand for cooling of office buildings and domestic buildings. So far, the focus has been on central systems with indirect solar thermal operation. Direct solar thermal plants can be decentral. A diffusion-absorption refrigeration system without mechanical components was constructed. Solvent circulation is achieved by the thermosyphon principle, which makes the plant noiseless, wear-free, and low-maintenance. In the course of a study, a mathematical model of the heat exchangers was established on the basis of the heat transfer equations, and optimisation suggestions for the heat exchanger were identified on this basis. The influence of the pressure gradient - which is decisive -, and the influence of geometry and materials were investigated. The simulations were validated by measurements. Concrete optimisation potentials were identified, and first suggestions were implemented. [German] Am ITW wird intensiv an einer direkt solarthermisch angetriebenen Diffusions-Absorptionskaeltemaschine (DAKM) geforscht. Die solare Kuehlung bietet grosse Potentiale zur Einsparung fossiler Energietraeger. Ein Grund dafuer ist die gute zeitliche Uebereinstimmung zwischen Solarstrahlung und dem Kaeltebedarf fuer die Kuehlung von Wohngebaeuden und Bueros. Bislang standen zentrale und indirekt solarthermisch angetriebene Systeme zur Kaelteerzeugung im Fokus. Die direkt solarthermisch angetriebene Anlage kann auf Grund ihres neuen Konzepts dezentral aufgebaut und betrieben werden. Auf Grundlage des Diffusions-Absorptionskaelteprozesses wurde eine Anlage gebaut, die ohne mechanische Bauteile funktioniert. Der Loesungsmittelumlauf erfolgt durch das Thermosiphonprinzip. Dadurch ist die Anlage im Betrieb geraeuschlos, verschleissfrei und wartungsarm. Im Rahmen einer Studienarbeit

Diffusion driven optofluidic dye lasers encapsulated into polymer chips

DEFF Research Database (Denmark)

Wienhold, Tobias; Breithaupt, Felix; Vannahme, Christoph

2012-01-01

Lab-on-a-chip systems made of polymers are promising for the integration of active optical elements, enabling e.g. on-chip excitation of fluorescent markers or spectroscopy. In this work we present diffusion operation of tunable optofluidic dye lasers in a polymer foil. We demonstrate that these ......Lab-on-a-chip systems made of polymers are promising for the integration of active optical elements, enabling e.g. on-chip excitation of fluorescent markers or spectroscopy. In this work we present diffusion operation of tunable optofluidic dye lasers in a polymer foil. We demonstrate...... that these first order distributed feedback lasers can be operated for more than 90 min at a pulse repetition rate of 2 Hz without fluidic pumping. Ultra-high output pulse energies of more than 10 μJ and laser thresholds of 2 μJ are achieved for resonator lengths of 3 mm. By introducing comparatively large on......-chip dye solution reservoirs, the required exchange of dye molecules is accomplished solely by diffusion. Polymer chips the size of a microscope cover slip (18 × 18 mm2) were fabricated in batches on a wafer using a commercially available polymer (TOPAS® Cyclic Olefin Copolymer). Thermal imprinting...

Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging

Energy Technology Data Exchange (ETDEWEB)

Zhang, S. [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States); Providence High School, Charlotte, NC 28270 (United States); Su, L.Q.; Kon, J. [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States); Gfroerer, T. [Davidson College, Davidson, NC 28035 (United States); Wanlass, M.W. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Zhang, Y., E-mail: yong.zhang@uncc.edu [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States)

2017-05-15

Photoluminescence (PL) imaging has been shown to be an efficient technique for investigating carrier diffusion in semiconductors. In the past, the measurement was typically carried out by measuring at one wavelength (e.g., at the band gap) or simply the whole emission band. At room temperature in a semiconductor like GaAs, the band-to-band PL emission may occur in a spectral range over 200 meV, vastly exceeding the average thermal energy of about 26 meV. To investigate the potential dependence of the carrier diffusion on the carrier kinetic energy, we performed wavelength selective PL imaging on a GaAs double hetero-structure in a spectral range from about 70 meV above to 50 meV below the bandgap, extracting the carrier diffusion lengths at different PL wavelengths by fitting the imaging data to a theoretical model. The results clearly show that the locally generated carriers of different kinetic energies mostly diffuse together, maintaining the same thermal distribution throughout the diffusion process. Potential effects related to carrier density, self-absorption, lateral wave-guiding, and local heating are also discussed.

Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

International Nuclear Information System (INIS)

Koprowski, A; Humbel, O; Plappert, M; Krenn, H

2015-01-01

We have performed an analytical study of the effects of oxygen plasma ashing processes in semiconductor device fabrication and its impact on minority carrier lifetime in high voltage semiconductor devices. Our work includes a critical background study of life time killing mechanisms by deep traps imparted into the semiconductor by barrel plasma ashing. The Elymat technique provides the opportunity to measure lifetime and diffusion length of minority carriers and surface photo voltage (SPV) measurement was used to analyse influences of process parameters such as photoresist, time budget and positioning in the process chamber. It was shown that in microwave plasma processes the diffusion length changes severely with tempering at 200 °C, whereas RF-plasma processes show a significant process time-dependence. Batch tools in general suffer from a strong first wafer effect which could be correlated with the static electrical parameters of the semiconductor devices. The trap identities were detected by using deep level transient spectroscopy and the chemical species of the traps has been proven by inductive coupled plasma mass spectrometry. The deep-bandgap trap energies are reliable fingerprints of the chosen process parameters such as process time and of resist-influences. By microwave plasma processes intrinsic Fe and FeB-complex levels were identified and a good agreement with the SPV-measurement and electrical device characteristic was shown. RF-plasma processes impart levels attributed to Pt levels and an additional level, which could be identified as a trap level probably forming a complex of Pt and H. (paper)

Wave-driven Rotation in Supersonically Rotating Mirrors

Energy Technology Data Exchange (ETDEWEB)

A. Fetterman and N.J. Fisch

2010-02-15

Supersonic rotation in mirrors may be produced by radio frequency waves. The waves produce coupled diffusion in ion kinetic and potential energy. A population inversion along the diffusion path then produces rotation. Waves may be designed to exploit a natural kinetic energy source or may provide the rotation energy on their own. Centrifugal traps for fusion and isotope separation may benefit from this wave-driven rotation.

Wave-driven Rotation in Supersonically Rotating Mirrors

International Nuclear Information System (INIS)

Fetterman, A.; Fisch, N.J.

2010-01-01

Supersonic rotation in mirrors may be produced by radio frequency waves. The waves produce coupled diffusion in ion kinetic and potential energy. A population inversion along the diffusion path then produces rotation. Waves may be designed to exploit a natural kinetic energy source or may provide the rotation energy on their own. Centrifugal traps for fusion and isotope separation may benefit from this wave-driven rotation.

Architectures for Improved Organic Semiconductor Devices

Science.gov (United States)

Beck, Jonathan H.

, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Self-diffusion in silicon - Change of a paradigm

Energy Technology Data Exchange (ETDEWEB)

Seeger, Alfred [Universitaet Stuttgart, Institut fuer Theoretische und Angewandte Physik, Pfaffenwaldring 57, 70569 Stuttgart (Germany); Max-Planck-Institut fuer Metallforschung, Heisenbergstr. 3, 70569 Stuttgart (Germany)

2011-12-15

Diffusion processes play a key role in the fabrication of semiconductor devices. For a long time the underlying mechanisms were thought to be analogous to those in metals, based on vacancies as thc dominant lattice defects in thermal equilibrium. From the mid-sixties onwards it became clear that this picture is invalid for Si, where strongly relaxed self-interstitials are dominant and responsible for self- and Group-III- diffusion. Inter alia, this change of a paradigm led to novel concepts and to the quantitative explanation of the diffusion of so-called hybrids such as Au, Pt, and Zn in Si by the so-called kick-out mechanism. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

International Nuclear Information System (INIS)

Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

2009-01-01

The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

Chaos-pass filtering in injection-locked semiconductor lasers

International Nuclear Information System (INIS)

Murakami, Atsushi; Shore, K. Alan

2005-01-01

Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Inter-atomic force constants of BaF{sub 2} by diffuse neutron scattering measurement

Energy Technology Data Exchange (ETDEWEB)

Sakuma, Takashi, E-mail: sakuma@mx.ibaraki.ac.jp; Makhsun,; Sakai, Ryutaro [Institute of Applied Beam Science, Ibaraki University, Mito 310-8512 (Japan); Xianglian [College of Physics and Electronics Information, Inner Mongolia University for the Nationalities, Tongliao 028043 (China); Takahashi, Haruyuki [Institute of Applied Beam Science, Ibaraki University, Hitachi 316-8511 (Japan); Basar, Khairul [Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung 40132 (Indonesia); Igawa, Naoki [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai 319-1195 (Japan); Danilkin, Sergey A. [Bragg Institute, Australian Nuclear Science and Technology Organisation, Kirrawee DC NSW 2232 (Australia)

2015-04-16

Diffuse neutron scattering measurement on BaF{sub 2} crystals was performed at 10 K and 295 K. Oscillatory form in the diffuse scattering intensity of BaF{sub 2} was observed at 295 K. The correlation effects among thermal displacements of F-F atoms were obtained from the analysis of oscillatory diffuse scattering intensity. The force constants among neighboring atoms in BaF{sub 2} were determined and compared to those in ionic crystals and semiconductors.

Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs

Science.gov (United States)

Göbbels, Stefan; Güntherodt, Gernot; Beschoten, Bernd

2018-05-01

We report on lateral spin-caloric transport (LSCT) of electron spin packets which are optically generated by ps laser pulses in the non-magnetic semiconductor n-GaAs at K. LSCT is driven by a local temperature gradient induced by an additional cw heating laser. The spatio-temporal evolution of the spin packets is probed using time-resolved Faraday rotation. We demonstrate that the local temperature-gradient induced spin diffusion is solely driven by a non-equilibrium hot spin distribution, i.e. without involvement of phonon drag effects. Additional electric field-driven spin drift experiments are used to verify directly the validity of the non-classical Einstein relation for moderately doped semiconductors at low temperatures for near band-gap excitation.

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

Science.gov (United States)

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

Evolution of biofunctional semiconductor nanocrystals: a calorimetric investigation.

Science.gov (United States)

Ghosh, Debasmita; Mondal, Somrita; Roy, Chandra Nath; Saha, Abhijit

2013-12-14

Semiconductor nanomaterials have found numerous applications in optoelectronic device fabrication and in platforms for drug delivery and hyperthermia cancer treatment, and in various other biomedical fields because of their high photochemical stability and size-tunable photoluminescence (PL). However, little attention has been paid to exploring the energetics of formation of these semiconductor nanoparticles. We demonstrate that formation of nanocrystals with biofunctionalization supported by widely used groups, BSA and cysteine, is an exothermic spontaneous process driven by enthalpy. The whole energetics of the reaction shows that formation of smaller particles is favored with lower synthesis temperature. Further, it is shown that the thermodynamics of nanoparticle formation is strongly influenced by the conformation of the protein matrix. We also demonstrate that protein supported formation of nanocrystals is thermodynamically more favorable compared to that involving smaller organic thiol groups. The favorable enthalpy of formation compensates unfavorable entropy, resulting in favorable Gibbs free energy. Thus, this study can open up new avenues for establishing a thermodynamic basis for the design of nanosystems with new and tunable properties.

Computer simulation model of the structure of ion implanted impurities in semiconductors

International Nuclear Information System (INIS)

Roman, E.; Majlis, N.

1983-02-01

A system of ion implanted impurities in a semiconductor is described by a Monte Carlo simulation of a non-equilibrium system of random distributed hard spheres. The radial distribution function of this system is found. The comparison is made with the fluid hard sphere case. The assumption of the absence either of annealing or diffusion of the impurities after the implantation process is also made. (author)

Rapid thermal processing and beyond applications in semiconductor processing

CERN Document Server

Lerch, W

2008-01-01

Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging a

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

NASA/DOD Aerospace Knowledge Diffusion Research Project. Paper 59: Japanese Technological Innovation. Implications for Large Commercial Aircraft and Knowledge Diffusion

Science.gov (United States)

Pinelli, Thomas E.; Barclay, Rebecca O.; Kotler, Mindy L.

1997-01-01

This paper explores three factors-public policy, the Japanese (national) innovation system, and knowledge-that influence technological innovation in Japan. To establish a context for the paper, we examine Japanese culture and the U.S. and Japanese patent systems in the background section. A brief history of the Japanese aircraft industry as a source of knowledge and technology for other industries is presented. Japanese and U.S. alliances and linkages in three sectors-biotechnology, semiconductors, and large commercial aircraft (LCA)-and the importation, absorption, and diffusion of knowledge and technology are examined next. The paper closes with implications for diffusing knowledge and technology, U.S. public policy, and LCA.

On an adaptive time stepping strategy for solving nonlinear diffusion equations

International Nuclear Information System (INIS)

Chen, K.; Baines, M.J.; Sweby, P.K.

1993-01-01

A new time step selection procedure is proposed for solving non- linear diffusion equations. It has been implemented in the ASWR finite element code of Lorenz and Svoboda [10] for 2D semiconductor process modelling diffusion equations. The strategy is based on equi-distributing the local truncation errors of the numerical scheme. The use of B-splines for interpolation (as well as for the trial space) results in a banded and diagonally dominant matrix. The approximate inverse of such a matrix can be provided to a high degree of accuracy by another banded matrix, which in turn can be used to work out the approximate finite difference scheme corresponding to the ASWR finite element method, and further to calculate estimates of the local truncation errors of the numerical scheme. Numerical experiments on six full simulation problems arising in semiconductor process modelling have been carried out. Results show that our proposed strategy is more efficient and better conserves the total mass. 18 refs., 6 figs., 2 tabs

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Defects and diffusion, theory and simulation an annual retrospective I

CERN Document Server

Fisher, David J

2009-01-01

This first volume, in a new series covering entirely general results in the fields of defects and diffusion, includes abstracts of papers which appeared between the beginning of 2008 and the end of October 2009 (journal availability permitting).This new series replaces the 'general' section which was previously part of each issue of the Metals, Ceramics and Semiconductor retrospective series. As well as 356 abstracts, the volume includes original papers on all of the usual material groups: ""Predicting Diffusion Coefficients from First Principles via Eyring's Reaction Rate Theory"" (Mantina, C

Characterization and application of halloysite nanotubes in semiconductor

International Nuclear Information System (INIS)

Basilia, Blessie; Sudario, Franck; Clemente, Richard; Millare, Jeremiah; Abad, Jojo

2013-01-01

The demand for low cost and reliable conductive die attach paste continues to increase because of the recent development in the semiconductor and electronics industry. Hybrid products with vertically and horizontally integrated components attach material with good electrical conductivity and excellent reliability. This has driven interest in polymers filled with silver particles that can deliver good performance and reliability at reduced cost. The challenge lies with the metal and polymer composition of the available die attach epoxies in the market with low Tg (glass transition temperature) and high CTE (coefficient of thermal expansion) compared to other components. Adding Halloysite Nanotube (HNT) to make a silver-filled epoxy (SFE) nanocomposite by in-situ intercalation method, the desired electrical conductivity of the epoxy matrix can be achieved without compromising its adhesion strength which is suitable for semiconductor die attach application. A custom design of experiment was used to study the effects of HNT mixed at varying composition into the silver filled epoxy matrix. Test results based on ASTM, JEDEC and military standards indicated that the desirable electrical conductivity and shear strength applicable to semiconductor die attach application can be achieved at 3% to 6% HNT composition. There was a substantial increase in Tg from 219°C t 228°C and reduction in CTE from 117 to 76 ppm/°C. Exfoliated structures of embedded HNT in the cured polymer matrix were observed in the SEM (Scanning Electron Microscopy) micrographs. Considering the electrical conductivity, adhesion strength, Tg and CTE, the HNT content of 3 to 6% is a good range to produce this material to attain good functionality and reliability. Combining HNT to make a silver filled epoxy-clay nanocomposite is highly feasible for semiconductor and electronics application. (author)

Keldysh field theory for driven open quantum systems.

Science.gov (United States)

Sieberer, L M; Buchhold, M; Diehl, S

2016-09-01

Recent experimental developments in diverse areas-ranging from cold atomic gases to light-driven semiconductors to microcavity arrays-move systems into the focus which are located on the interface of quantum optics, many-body physics and statistical mechanics. They share in common that coherent and driven-dissipative quantum dynamics occur on an equal footing, creating genuine non-equilibrium scenarios without immediate counterpart in equilibrium condensed matter physics. This concerns both their non-thermal stationary states and their many-body time evolution. It is a challenge to theory to identify novel instances of universal emergent macroscopic phenomena, which are tied unambiguously and in an observable way to the microscopic drive conditions. In this review, we discuss some recent results in this direction. Moreover, we provide a systematic introduction to the open system Keldysh functional integral approach, which is the proper technical tool to accomplish a merger of quantum optics and many-body physics, and leverages the power of modern quantum field theory to driven open quantum systems.

How to measure atomic diffusion processes in the sub-nanometer range

International Nuclear Information System (INIS)

Schmidt, H.; Gupta, M.; Gutberlet, T.; Stahn, J.; Bruns, M.

2008-01-01

Self-diffusion of the atomic constituents in the solid state is a fundamental transport process that controls various materials properties. With established methods of diffusivity determination it is only possible to measure diffusion processes on a length scale down to 10 nm at corresponding diffusivities of 10 -23 m 2 s -1 . However, for complex materials like amorphous or nano-structured solids the given values are often not sufficient for a proper characterization. Consequently, it is necessary to detect diffusion length well below 1 nm. Here, we present the method of neutron reflectometry on isotope multilayers. For two model systems, an amorphous semiconductor and an amorphous metallic alloy, the efficiency of this method is demonstrated to detect minimum diffusion lengths of only 0.6-0.7 nm. It is further shown that diffusivities can be derived which are more than two orders of magnitude lower than those obtainable with conventional methods. Prospects of this method in order to solve actual kinetic problems in materials science are given

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

The simulation of charge sharing in semiconductor X-ray pixel detectors

CERN Document Server

Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

2002-01-01

Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

Semiconductor statistics

CERN Document Server

Blakemore, J S

1987-01-01

In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

Modeling 2D and 3D diffusion.

Science.gov (United States)

Saxton, Michael J

2007-01-01

Modeling obstructed diffusion is essential to the understanding of diffusion-mediated processes in the crowded cellular environment. Simple Monte Carlo techniques for modeling obstructed random walks are explained and related to Brownian dynamics and more complicated Monte Carlo methods. Random number generation is reviewed in the context of random walk simulations. Programming techniques and event-driven algorithms are discussed as ways to speed simulations.

Surface-Plasmon-Driven Hot Electron Photochemistry.

Science.gov (United States)

Zhang, Yuchao; He, Shuai; Guo, Wenxiao; Hu, Yue; Huang, Jiawei; Mulcahy, Justin R; Wei, Wei David

2017-11-30

Visible-light-driven photochemistry has continued to attract heightened interest due to its capacity to efficiently harvest solar energy and its potential to solve the global energy crisis. Plasmonic nanostructures boast broadly tunable optical properties coupled with catalytically active surfaces that offer a unique opportunity for solar photochemistry. Resonant optical excitation of surface plasmons produces energetic hot electrons that can be collected to facilitate chemical reactions. This review sums up recent theoretical and experimental approaches for understanding the underlying photophysical processes in hot electron generation and discusses various electron-transfer models on both plasmonic metal nanostructures and plasmonic metal/semiconductor heterostructures. Following that are highlights of recent examples of plasmon-driven hot electron photochemical reactions within the context of both cases. The review concludes with a discussion about the remaining challenges in the field and future opportunities for addressing the low reaction efficiencies in hot-electron-induced photochemistry.

Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

International Nuclear Information System (INIS)

Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

1998-01-01

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Band structure engineering of semiconductors for enhanced photoelectrochemical water splitting: The case of TiO2

Science.gov (United States)

Yin, Wan-Jian; Tang, Houwen; Wei, Su-Huai; Al-Jassim, Mowafak M.; Turner, John; Yan, Yanfa

2010-07-01

Here, we propose general strategies for the rational design of semiconductors to simultaneously meet all of the requirements for a high-efficiency, solar-driven photoelectrochemical (PEC) water-splitting device. As a case study, we apply our strategies for engineering the popular semiconductor, anatase TiO2 . Previous attempts to modify known semiconductors such as TiO2 have often focused on a particular individual criterion such as band gap, neglecting the possible detrimental consequence to other important criteria. Density-functional theory calculations reveal that with appropriate donor-acceptor coincorporation alloys with anatase TiO2 hold great potential to satisfy all of the criteria for a viable PEC device. We predict that (Mo, 2N) and (W, 2N) are the best donor-acceptor combinations in the low-alloy concentration regime whereas (Nb, N) and (Ta, N) are the best choice of donor-acceptor pairs in the high-alloy concentration regime.

Heterogeneous semiconductor photocatalysts for hydrogen production from aqueous solutions of electron donors

Science.gov (United States)

Kozlova, E. A.; Parmon, V. N.

2017-09-01

Current views on heterogeneous photocatalysts for visible- and near-UV-light-driven production of molecular hydrogen from water and aqueous solutions of inorganic and organic electron donors are analyzed and summarized. Main types of such photocatalysts and methods for their preparation are considered. Particular attention is paid to semiconductor photocatalysts based on sulfides that are known to be sensitive to visible light. The known methods for increasing the quantum efficiency of the target process are discussed, including design of the structure, composition and texture of semiconductor photocatalysts and variation of the medium pH and the substrate and photocatalyst concentrations. Some important aspects of the activation and deactivation of sulfide photocatalysts and the evolution of their properties in the course of hydrogen production processes in the presence of various types of electron donors are analyzed. The bibliography includes 276 references.

Towards a systematic assessment of errors in diffusion Monte Carlo calculations of semiconductors: Case study of zinc selenide and zinc oxide

Energy Technology Data Exchange (ETDEWEB)

Yu, Jaehyung [Department of Mechanical Science and Engineering, 1206 W Green Street, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Ertekin, Elif, E-mail: ertekin@illinois.edu [Department of Mechanical Science and Engineering, 1206 W Green Street, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); International Institute for Carbon Neutral Energy Research - WPI-I" 2CNER, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan)

2015-12-14

The fixed node diffusion Monte Carlo (DMC) method has attracted interest in recent years as a way to calculate properties of solid materials with high accuracy. However, the framework for the calculation of properties such as total energies, atomization energies, and excited state energies is not yet fully established. Several outstanding questions remain as to the effect of pseudopotentials, the magnitude of the fixed node error, and the size of supercell finite size effects. Here, we consider in detail the semiconductors ZnSe and ZnO and carry out systematic studies to assess the magnitude of the energy differences arising from controlled and uncontrolled approximations in DMC. The former include time step errors and supercell finite size effects for ground and optically excited states, and the latter include pseudopotentials, the pseudopotential localization approximation, and the fixed node approximation. We find that for these compounds, the errors can be controlled to good precision using modern computational resources and that quantum Monte Carlo calculations using Dirac-Fock pseudopotentials can offer good estimates of both cohesive energy and the gap of these systems. We do however observe differences in calculated optical gaps that arise when different pseudopotentials are used.

Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method

KAUST Repository

Zhang, Xuan; Zheng, Xiujun; Zhang, Hong; Zhang, Junli; Fu, Jiecai; Zhang, Qiang; Peng, Chaoyi; Bai, Feiming; Zhang, Xixiang; Peng, Yong

2017-01-01

Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.

Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method

KAUST Repository

Zhang, Xuan

2017-08-10

Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.

Degradation of quantum dots and change of their energy spectra in semimagnetic semiconductors under nuclear irradiation

Directory of Open Access Journals (Sweden)

G. V. Vertsimakha

2011-09-01

Full Text Available Spreading of the potential profile for the charge carriers in quantum dots in binary semiconductors and the shift of the quantum levels for electrons, holes and excitons under the nuclear irradiation has been investigated. The spreading occurs because of the redistribution of atoms of different kinds between the barrier and quantum dot due to radiationenhanced diffusion. It is shown that in semimagnetic semiconductors (e.g. CdTe/(Cd, MnTe, in which a giant magnetic splitting of exciton levels exists, the redistribution of magnetic ions under irradiation causes significant increase in the splitting of exciton levels in a magnetic field in a quantum dot.

A gradient structure for reaction–diffusion systems and for energy-drift-diffusion systems

International Nuclear Information System (INIS)

Mielke, Alexander

2011-01-01

In recent years the theory of the Wasserstein metric has opened up new treatments of diffusion equations as gradient systems, where the free energy or entropy take the role of the driving functional and where the space is equipped with the Wasserstein metric. We show on the formal level that this gradient structure can be generalized to reaction–diffusion systems with reversible mass-action kinetic. The metric is constructed using the dual dissipation potential, which is a quadratic functional of all chemical potentials including the mobilities as well as the reaction kinetics. The metric structure is obtained by Legendre transform from the dual dissipation potential. The same ideas extend to systems including electrostatic interactions or a correct energy balance via coupling to the heat equation. We show this by treating the semiconductor equations involving the electron and hole densities, the electrostatic potential, and the temperature. Thus, the models in Albinus et al (2002 Nonlinearity 15 367–83), which stimulated this work, have a gradient structure

Stability analysis of non-autonomous reaction-diffusion systems: the effects of growing domains

KAUST Repository

Madzvamuse, Anotida; Gaffney, Eamonn A.; Maini, Philip K.

2009-01-01

By using asymptotic theory, we generalise the Turing diffusively-driven instability conditions for reaction-diffusion systems with slow, isotropic domain growth. There are two fundamental biological differences between the Turing conditions on fixed and growing domains, namely: (i) we need not enforce cross nor pure kinetic conditions and (ii) the restriction to activator-inhibitor kinetics to induce pattern formation on a growing biological system is no longer a requirement. Our theoretical findings are confirmed and reinforced by numerical simulations for the special cases of isotropic linear, exponential and logistic growth profiles. In particular we illustrate an example of a reaction-diffusion system which cannot exhibit a diffusively-driven instability on a fixed domain but is unstable in the presence of slow growth. © Springer-Verlag 2009.

Stability analysis of non-autonomous reaction-diffusion systems: the effects of growing domains

KAUST Repository

Madzvamuse, Anotida

2009-08-29

By using asymptotic theory, we generalise the Turing diffusively-driven instability conditions for reaction-diffusion systems with slow, isotropic domain growth. There are two fundamental biological differences between the Turing conditions on fixed and growing domains, namely: (i) we need not enforce cross nor pure kinetic conditions and (ii) the restriction to activator-inhibitor kinetics to induce pattern formation on a growing biological system is no longer a requirement. Our theoretical findings are confirmed and reinforced by numerical simulations for the special cases of isotropic linear, exponential and logistic growth profiles. In particular we illustrate an example of a reaction-diffusion system which cannot exhibit a diffusively-driven instability on a fixed domain but is unstable in the presence of slow growth. © Springer-Verlag 2009.

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

A simple model for the determination of L0, D and τ in a semiconductor and their temperature dependence

International Nuclear Information System (INIS)

Ahmed, F.

1989-07-01

It is very important to characterize the quality of a semiconductor material before it is processed into a device. Diffusion length L 0 , diffusion constant D and carrier lifetime τ of minority carriers are some of the parameters which play a vital role in determining the quality of a semiconductor material. Recently Ahmed and co-workers have shown that by measuring the frequency response of a time varying (e iwt ) light (or electron) beam one can determine all the important parameters including the absorption coefficient of light and surface recombination velocity. Here we propose a simple method by which one can obtain L 0 , D and τ separately from measured phase shift of short circuit photo current at some modulation frequency ω and at two different wavelengths of incident light. It is suggested that the above procedure is particularly suitable for inferring the temperature dependence of these parameters. (author). 5 refs

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Numerical method for a 2D drift diffusion model arising in strained n ...

Indian Academy of Sciences (India)

Abstract. This paper reports the calculation of electron transport in metal oxide semiconductor field effects transistors (MOSFETs) with biaxially tensile strained silicon channel. The calculation is formulated based on two-dimensional drift diffusion model (DDM) including strain effects. The carrier mobility dependence on the ...

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

Science.gov (United States)

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors

CERN Document Server

Vanderschaeve, G; Insa, P D T; Caillard, D

2000-01-01

TEM in situ straining experiments provide a unique way to investigate in real time the behaviour of individual dislocations under applied stress. The results obtained on a variety of semiconductors are presented: numerous dislocation sources are observed which makes it possible to measure the dislocation velocity as a function of different physical parameters (local shear stress, temperature, dislocation character, length of the moving dislocation, ...). The experimental results are consistent with a dislocation glide governed by the Peierls mechanism, even for II-VI compounds which have a significant degree of ionic character. For compounds, a linear dependence of the dislocation velocity on the length of the moving segment is noticed, whereas for elemental semiconductors a transition between a length-dependent and a length-independent velocity regime is observed. Analysed in the framework of the kink diffusion model (Hirth and Lothe theory), these results allow an estimation of the kink formation and migrat...

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Semiconductor spintronics

CERN Document Server

Xia, Jianbai; Chang, Kai

2012-01-01

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

The astigmatism factor for semiconductor injection lasers

International Nuclear Information System (INIS)

Zhao Yiguang; Guo Changzhi

1988-03-01

The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

Science.gov (United States)

Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

2017-08-10

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

Directory of Open Access Journals (Sweden)

Jianqiao Liu

2017-08-01

Full Text Available The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

Deformation-driven diffusion and plastic flow in amorphous granular pillars.

Science.gov (United States)

Li, Wenbin; Rieser, Jennifer M; Liu, Andrea J; Durian, Douglas J; Li, Ju

2015-06-01

We report a combined experimental and simulation study of deformation-induced diffusion in compacted quasi-two-dimensional amorphous granular pillars, in which thermal fluctuations play a negligible role. The pillars, consisting of bidisperse cylindrical acetal plastic particles standing upright on a substrate, are deformed uniaxially and quasistatically by a rigid bar moving at a constant speed. The plastic flow and particle rearrangements in the pillars are characterized by computing the best-fit affine transformation strain and nonaffine displacement associated with each particle between two stages of deformation. The nonaffine displacement exhibits exponential crossover from ballistic to diffusive behavior with respect to the cumulative deviatoric strain, indicating that in athermal granular packings, the cumulative deviatoric strain plays the role of time in thermal systems and drives effective particle diffusion. We further study the size-dependent deformation of the granular pillars by simulation, and find that different-sized pillars follow self-similar shape evolution during deformation. In addition, the yield stress of the pillars increases linearly with pillar size. Formation of transient shear lines in the pillars during deformation becomes more evident as pillar size increases. The width of these elementary shear bands is about twice the diameter of a particle, and does not vary with pillar size.

Numerical method for a 2D drift diffusion model arising in strained n ...

Indian Academy of Sciences (India)

This paper reports the calculation of electron transport in metal oxide semiconductor field effects transistors (MOSFETs) with biaxially tensile strained silicon channel. The calculation is formulated based on two-dimensional drift diffusion model (DDM) including strain effects. The carrier mobility dependence on the lateral and ...

Product diffusion through on-demand information-seeking behaviour.

Science.gov (United States)

Riedl, Christoph; Bjelland, Johannes; Canright, Geoffrey; Iqbal, Asif; Engø-Monsen, Kenth; Qureshi, Taimur; Sundsøy, Pål Roe; Lazer, David

2018-02-01

Most models of product adoption predict S-shaped adoption curves. Here we report results from two country-scale experiments in which we find linear adoption curves. We show evidence that the observed linear pattern is the result of active information-seeking behaviour: individuals actively pulling information from several central sources facilitated by modern Internet searches. Thus, a constant baseline rate of interest sustains product diffusion, resulting in a linear diffusion process instead of the S-shaped curve of adoption predicted by many diffusion models. The main experiment seeded 70 000 (48 000 in Experiment 2) unique voucher codes for the same product with randomly sampled nodes in a social network of approximately 43 million individuals with about 567 million ties. We find that the experiment reached over 800 000 individuals with 80% of adopters adopting the same product-a winner-take-all dynamic consistent with search engine driven rankings that would not have emerged had the products spread only through a network of social contacts. We provide evidence for (and characterization of) this diffusion process driven by active information-seeking behaviour through analyses investigating (a) patterns of geographical spreading; (b) the branching process; and (c) diffusion heterogeneity. Using data on adopters' geolocation we show that social spreading is highly localized, while on-demand diffusion is geographically independent. We also show that cascades started by individuals who actively pull information from central sources are more effective at spreading the product among their peers. © 2018 The Authors.

Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

Science.gov (United States)

Ho, I.-Chen

Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms

Probing the defects in nano-semiconductors using positrons

Energy Technology Data Exchange (ETDEWEB)

Nambissan, P M G, E-mail: pmg.nambissan@saha.ac.in [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

2011-01-10

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS{sub 2} nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn{sup 2+}-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Probing the defects in nano-semiconductors using positrons

International Nuclear Information System (INIS)

Nambissan, P M G

2011-01-01

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS 2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn 2+ -doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Probing the defects in nano-semiconductors using positrons

Science.gov (United States)

Nambissan, P. M. G.

2011-01-01

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn2+-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Scanning tunnel microscopy of semiconductor nanostructures

International Nuclear Information System (INIS)

Eder, C.

1997-09-01

In this work a scanning tunneling microscope (STM) is utilized as a surface sensitive tool for local characterization of internal potential profiles of GaAs/AlGaAs heterostructures. The STM is operated at variable temperatures under ambient conditions, i.e. either in air or in the variable temperature insert of a cryostat. Distinct local differences between current-voltage curves taken on inverted heterostructures, which were patterned by wet chemically etching, are found. The spectroscopic differences can be ascribed to the internal potential profile in the subsurface regions of the sample. Current imaging tunneling spectroscopy (CITS) is applied to study quantum wire regions. It is found that the magnitude of the CITS-current is an indirect measure of edge depletion zones, which are much larger at 4.2 K. Direct measurements of relevant energy levels in quantum structures were obtained by ballistic electron emission microscopy (BEEM). It is shown that this 3-terminal technique is an excellent tool for transport characterization of minibands formed in semiconductor superlattices. Furthermore, low dimensional electron gases are shown to act as very efficient collector electrodes at low temperatures. For the first time, BEEM experiments were performed at 4.2 K. The enhanced thermal resolution at 4.2 K allows an analysis of the relevant scattering processes. It is found that the collector current is strongly influenced by diffusive scattering at the metal/semiconductor interface. (author)

Lateral diffusion of nutrients by mammalian herbivores in terrestrial ecosystems.

Directory of Open Access Journals (Sweden)

Adam Wolf

Full Text Available Animals translocate nutrients by consuming nutrients at one point and excreting them or dying at another location. Such lateral fluxes may be an important mechanism of nutrient supply in many ecosystems, but lack quantification and a systematic theoretical framework for their evaluation. This paper presents a mathematical framework for quantifying such fluxes in the context of mammalian herbivores. We develop an expression for lateral diffusion of a nutrient, where the diffusivity is a biologically determined parameter depending on the characteristics of mammals occupying the domain, including size-dependent phenomena such as day range, metabolic demand, food passage time, and population size. Three findings stand out: (a Scaling law-derived estimates of diffusion parameters are comparable to estimates calculated from estimates of each coefficient gathered from primary literature. (b The diffusion term due to transport of nutrients in dung is orders of magnitude large than the coefficient representing nutrients in bodymass. (c The scaling coefficients show that large herbivores make a disproportionate contribution to lateral nutrient transfer. We apply the diffusion equation to a case study of Kruger National Park to estimate the conditions under which mammal-driven nutrient transport is comparable in magnitude to other (abiotic nutrient fluxes (inputs and losses. Finally, a global analysis of mammalian herbivore transport is presented, using a comprehensive database of contemporary animal distributions. We show that continents vary greatly in terms of the importance of animal-driven nutrient fluxes, and also that perturbations to nutrient cycles are potentially quite large if threatened large herbivores are driven to extinction.

Mesoscopic spin Hall effect in semiconductor nanostructures

Science.gov (United States)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

Production of solar chemicals: gaining selectivity with hybrid molecule/semiconductor assemblies.

Science.gov (United States)

Hennessey, Seán; Farràs, Pau

2018-05-29

Research on the production of solar fuels and chemicals has rocketed over the past decade, with a wide variety of systems proposed to harvest solar energy and drive chemical reactions. In this Feature Article we have focused on hybrid molecule/semiconductor assemblies in both powder and supported materials, summarising recent systems and highlighting the enormous possibilities offered by such assemblies to carry out highly demanding chemical reactions with industrial impact. Of relevance is the higher selectivity obtained in visible light-driven organic transformations when using molecular catalysts compared to photocatalytic materials.

Stable room-temperature thallium bromide semiconductor radiation detectors

Science.gov (United States)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Stable room-temperature thallium bromide semiconductor radiation detectors

Directory of Open Access Journals (Sweden)

A. Datta

2017-10-01

Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Charge and spin diffusion on the metallic side of the metal-insulator transition: A self-consistent approach

Science.gov (United States)

Wellens, Thomas; Jalabert, Rodolfo A.

2016-10-01

We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and diffusion coefficient are calculated within different schemes of the self-consistent framework. The simplest of these schemes qualitatively reproduces previous phenomenological developments, while more elaborate calculations provide corrections that approach the values obtained in numerical simulations. The results are universal for zinc-blende semiconductors with electron conductance in the impurity band, and thus they are able to account for the measured spin-relaxation times of materials with very different physical parameters. From a general point of view, our theory opens a new perspective for describing the hopping dynamics in random quantum networks.

Directional Charge Separation in Isolated Organic Semiconductor Crystalline Nanowires

Energy Technology Data Exchange (ETDEWEB)

Barnes, Michael; Labastide, Joelle; Bond-Thompson, Hilary; Briseno, Alejandro; Collela, Nicolas

2017-03-01

In the conventional view of organic photovoltaics (OPV), localized electronic excitations (excitons) formed in the active layer are transported by random 3D diffusion to an interface where charge separation and extraction take place. Because radiative de-excitation is usually strongly allowed in organic semiconductors, efficient charge separation requires high exciton mobility, with much of the diffusive motion ‘wasted’ in directions that don’t result in an interface encounter. Our research efforts are focused on ways to enforce a preferred directionality in energy and/or charge transport using ordered crystalline nanowires in which the intermolecular interactions that facilitate transport along, for example, the pi-stacking axis, can be made several orders of magnitude stronger than those in a transverse direction. The results presented in our recent work (Nature Communications) is a first step towards realizing the goal of directional control of both energy transport and charge separation, where excitons shared between adjacent molecules dissociate exclusively along the pi-stacking direction.

Design and implementation of ejector driven micropump

International Nuclear Information System (INIS)

Chuech, S.G.; Chen, C.-C.; Lu, J.-C.; Yan, M.-M.

2007-01-01

The working principle of the ejector, which converts fluid energy into suction power, was utilized for designing the miniaturized pump. The present micropump with the structure scale in the size range of microns to millimeters was fabricated through the MEMS manufacturing processes. The pump may offer portable convenience and requires no electrical power; especially it can be used in many applications where electricity is unsafe or impractical. To optimize the design, the size of the diffuser throat in the micropump was varied and used as a design parameter. The optimization results indicate that there exists an optimal width for the diffuser throat, which is critically important to the design of an ejector driven micropump. For testing the pump, the fabricated micropump was driven by compressed air from a portable can to pump water and air. In the experimental tests, the pumping flow rates of water and air were measured and compared for design optimization

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

Microscopic theory of photon-correlation spectroscopy in strong-coupling semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schneebeli, Lukas

2009-11-27

would be a great contribution in the growing field of quantum optics in semiconductors. The efforts in QD systems are again driven by the atomic systems which not only have shown the vacuum Rabi splitting, but also the second rung, e.g. via direct spectroscopy and via photon-correlation measurements. In this thesis, it is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission. The resonance fluorescence equations are derived and solved for strong-coupling semiconductor quantum-dot systems using a fully quantized multimode theory and a cluster-expansion approach. A reduced model is developed to explain the origin of auto- and cross-correlation resonances in the two-photon emission spectrum of the fluorescent light. These resonances are traced back to the two-photon strong-coupling states of Jaynes-Cummings ladder. The accuracy of the reduced model is verified via numerical solution of the resonance fluorescence equations. The analysis reveals the direct relation between the squeezed-light emission and the strong-coupling states in optically excited semiconductor systems. (orig.)

Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation

Science.gov (United States)

Donatini, Fabrice; Pernot, Julien

2018-03-01

In semiconductor nanowires (NWs) the exciton diffusion coefficient can be determined using a scanning electron microscope fitted with a cathodoluminescence system. High spatial and temporal resolution cathodoluminescence experiments are needed to measure independently the exciton diffusion length and lifetime in single NWs. However, both diffusion length and lifetime can be affected by the electron beam bombardment during observation and measurement. Thus, in this work the exciton lifetime in a ZnO NW is measured versus the electron beam dose (EBD) via a time-resolved cathodoluminescence experiment with a temporal resolution of 50 ps. The behavior of the measured exciton lifetime is consistent with our recent work on the EBD dependence of the exciton diffusion length in similar NWs investigated under comparable SEM conditions. Combining the two results, the exciton diffusion coefficient in ZnO is determined at room temperature and is found constant over the full span of EBD.

Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

KAUST Repository

Wondmagegn, Wudyalew T.

2011-04-01

The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Terahertz Focusing and Polarization Control in Large-Area Bias-Free Semiconductor Emitters

Science.gov (United States)

Carthy, Joanna L.; Gow, Paul C.; Berry, Sam A.; Mills, Ben; Apostolopoulos, Vasilis

2018-03-01

We show that, when large-area multiplex terahertz semiconductor emitters, that work on diffusion currents and Schottky potentials, are illuminated by ultrashort optical pulses they can radiate a directional electromagnetic terahertz pulse which is controlled by the angular spectrum of the incident optical beam. Using the lens that focuses the incident near-infrared pulse, we have demonstrated THz emission focusing in free space, at the same point where the optical radiation would focus. We investigated the beam waist and Gouy phase shift of the THz emission as a function of frequency. We also show that the polarization profile of the emitted THz can be tailored by the metallic patterning on the semiconductor, demonstrating radial polarization when a circular emitter design is used. Our techniques can be used for fast THz beam steering and mode control for efficiently coupling to waveguides without the need for THz lenses or parabolic mirrors.

Continuum modelling of silicon diffusion in indium gallium arsenide

Science.gov (United States)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

Science.gov (United States)

Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

2012-09-01

In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Semiconductors data handbook

CERN Document Server

Madelung, Otfried

2004-01-01

This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

Quantification of Ionic Diffusion in Lead Halide Perovskite Single Crystals

KAUST Repository

Peng, Wei

2018-05-25

Lead halide perovskites are mixed electronic/ionic semiconductors that have recently revolutionized the photovoltaics field. The physical characterization of the ionic conductivity has been rather elusive due to the highly intermixing of ionic and electronic current. In this work the synthesis of low defect density monocrystalline MAPbBr3 (MA=Methyl ammonium) solar cells free of hole transport layer (HTL) suppresses the effect of electronic current. Impedance spectroscopy reveals the characteristic signature of ionic diffusion (the Warburg element and transmission line equivalent circuit) and ion accumulation at the MAPbBr3/Au interface. Diffusion coefficients are calculated based on a good correlation between thickness of MAPbBr3 and characteristic diffusion transition frequency. In addition, reactive external interfaces are studied by comparison of polycrystalline MAPbBr3 devices prepared either with or without a HTL. The low frequency response in IS measurements is correlated with the chemical reactivity of moving ions with the external interfaces and diffusion into the HTL.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Science.gov (United States)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

Science.gov (United States)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

Thermophysical Properties of Te-based II-VI Semiconductors: Reduced Algorithms for Thermal Diffusivity Determination

Science.gov (United States)

Banish, R. Michael; Brantschen, Segolene; Pourpoint, Timothee L.; Wessling, Francis; Sekerka, Robert F.

2003-01-01

This paper presents methodologies for measuring the thermal diffusivity using the difference between temperatures measured at two, essentially independent, locations. A heat pulse is applied for an arbitrary time to one region of the sample; either the inner core or the outer wall. Temperature changes are then monitored versus time. The thermal diffusivity is calculated from the temperature difference versus time. No initial conditions are used directly in the final results.

Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

Science.gov (United States)

Henderson, Gregory Newell

Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

Construction of vesicle CdSe nano-semiconductors photocatalysts with improved photocatalytic activity: Enhanced photo induced carriers separation efficiency and mechanism insight.

Science.gov (United States)

Wen, Jiangsu; Ma, Changchang; Huo, Pengwei; Liu, Xinlin; Wei, Maobin; Liu, Yang; Yao, Xin; Ma, Zhongfei; Yan, Yongsheng

2017-10-01

Visible-light-driven photocatalysis as a green technology has attracted a lot of attention due to its potential applications in environmental remediation. Vesicle CdSe nano-semiconductor photocatalyst are successfully prepared by a gas template method and characterized by a variety of methods. The vesicle CdSe nano-semiconductors display enhanced photocatalytic performance for the degradation of tetracycline hydrochloride, the photodegradation rate of 78.824% was achieved by vesicle CdSe, which exhibited an increase of 31.779% compared to granular CdSe. Such an exceptional photocatalytic capability can be attributed to the unique structure of the vesicle CdSe nano-semiconductor with enhanced light absorption ability and excellent carrier transport capability. Meanwhile, the large surface area of the vesicle CdSe nano-semiconductor can increase the contact probability between catalyst and target and provide more surface-active centers. The photocatalytic mechanisms are analyzed by active species quenching. It indicates that h + and O 2 - are the main active species which play a major role in catalyzing environmental toxic pollutants. Simultaneously, the vesicle CdSe nano-semiconductor had high efficiency and stability. Copyright © 2017. Published by Elsevier B.V.

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

An experimental study of high heat flux removal by shear-driven liquid films

Directory of Open Access Journals (Sweden)

Zaitsev Dmitry

2017-01-01

Full Text Available Intensively evaporating liquid films, moving under the friction of a co-current gas flow in a mini-channel (shear-driven liquid films, are promising for the use in cooling systems of modern semiconductor devices with high local heat release. In this work, the effect of various parameters, such as the liquid and gas flow rates and channel height, on the critical heat flux in the locally heated shear-driven water film has been studied. A record value of the critical heat flux of 1200 W/cm2 has been achieved in experiments. Heat leaks to the substrate and heat losses to the atmosphere in total do not exceed 25% for the heat flux above 400 W/cm2. Comparison of the critical heat fluxes for the shear-driven liquid film and for flow boiling in a minichannel shows that the critical heat flux is an order of magnitude higher for the shear-driven liquid film. This confirms the prospect of using shear-driven liquid films in the modern high-efficient cooling systems.

Development and testing of a novel survey to assess Stakeholder-driven Community Diffusion of childhood obesity prevention efforts.

Science.gov (United States)

Korn, Ariella R; Hennessy, Erin; Hammond, Ross A; Allender, Steven; Gillman, Matthew W; Kasman, Matt; McGlashan, Jaimie; Millar, Lynne; Owen, Brynle; Pachucki, Mark C; Swinburn, Boyd; Tovar, Alison; Economos, Christina D

2018-05-31

Involving groups of community stakeholders (e.g., steering committees) to lead community-wide health interventions appears to support multiple outcomes ranging from policy and systems change to individual biology. While numerous tools are available to measure stakeholder characteristics, many lack detail on reliability and validity, are not context specific, and may not be sensitive enough to capture change over time. This study describes the development and reliability of a novel survey to measure Stakeholder-driven Community Diffusion via assessment of stakeholders' social networks, knowledge, and engagement about childhood obesity prevention. This study was completed in three phases. Phase 1 included conceptualization and online survey development through literature reviews and expert input. Phase 2 included a retrospective study with stakeholders from two completed whole-of-community interventions. Between May-October 2015, 21 stakeholders from the Shape Up Somerville and Romp & Chomp interventions recalled their social networks, knowledge, and engagement pre-post intervention. We also assessed one-week test-retest reliability of knowledge and engagement survey modules among Shape Up Somerville respondents. Phase 3 included survey modifications and a second prospective reliability assessment. Test-retest reliability was assessed in May 2016 among 13 stakeholders involved in ongoing interventions in Victoria, Australia. In Phase 1, we developed a survey with 7, 20 and 50 items for the social networks, knowledge, and engagement survey modules, respectively. In the Phase 2 retrospective study, Shape Up Somerville and Romp & Chomp networks included 99 and 54 individuals. Pre-post Shape Up Somerville and Romp & Chomp mean knowledge scores increased by 3.5 points (95% CI: 0.35-6.72) and (- 0.42-7.42). Engagement scores did not change significantly (Shape Up Somerville: 1.1 points (- 0.55-2.73); Romp & Chomp: 0.7 points (- 0.43-1.73)). Intraclass correlation

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Metal semiconductor contacts and devices

CERN Document Server

Cohen, Simon S; Einspruch, Norman G

1986-01-01

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Reducing leakage current in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

Science.gov (United States)

Vella, M.C.

1996-08-13

Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

The Adoption and Diffusion of eLearning in UK Universities: \\ud A Comparative Case Study Using Giddens’s Theory of Structuration

OpenAIRE

Singh, Gurmak; Hardaker, Glenn

2011-01-01

This exploratory study identifies the factors that influence the adoption and diffusion of instructional technology at five prominent universities in the United Kingdom. The study examines the organisational factors that enable and inhibit organisational adoption and diffusion of innovation. Five diverse approaches to adoption and diffusions of instructional technology were examined; top-down, integrated top-down and bottom, research driven and project driven approach. The paper argues that s...

Microscopic origin and macroscopic implications of lane formation in mixtures of oppositely driven particles

Science.gov (United States)

Klymko, Katherine; Geissler, Phillip L.; Whitelam, Stephen

2016-08-01

Colloidal particles of two types, driven in opposite directions, can segregate into lanes [Vissers et al., Soft Matter 7, 2352 (2011), 10.1039/c0sm01343a]. This phenomenon can be reproduced by two-dimensional Brownian dynamics simulations of model particles [Dzubiella et al., Phys. Rev. E 65, 021402 (2002), 10.1103/PhysRevE.65.021402]. Here we use computer simulation to assess the generality of lane formation with respect to variation of particle type and dynamical protocol. We find that laning results from rectification of diffusion on the scale of a particle diameter: oppositely driven particles must, in the time taken to encounter each other in the direction of the drive, diffuse in the perpendicular direction by about one particle diameter. This geometric constraint implies that the diffusion constant of a particle, in the presence of those of the opposite type, grows approximately linearly with the Péclet number, a prediction confirmed by our numerics over a range of model parameters. Such environment-dependent diffusion is statistically similar to an effective interparticle attraction; consistent with this observation, we find that oppositely driven nonattractive colloids display features characteristic of the simplest model system possessing both interparticle attractions and persistent motion, the driven Ising lattice gas [Katz, Leibowitz, and Spohn, J. Stat. Phys. 34, 497 (1984), 10.1007/BF01018556]. These features include long-ranged correlations in the disordered regime, a critical regime characterized by a change in slope of the particle current with the Péclet number, and fluctuations that grow with system size. By analogy, we suggest that lane formation in the driven colloid system is a phase transition in the macroscopic limit, but that macroscopic phase separation would not occur in finite time upon starting from disordered initial conditions.

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

Microfluidic diffusivity meter: a tool to optimize CO2 driven enhanced oil recovery

Science.gov (United States)

Puneeth, S. B.; Kim, Young Ho; Goel, Sanket

2017-02-01

As the energy demands continue to swell with growing population and there persists a lack of unexploited oilfields, the prime focus of any nation would be to maximize the oil recovery factor from existing oil fields. CO2-Enhanced oil recovery is a process to improve the recovery of crude oil from an oil field and works at high pressure and in very deep conditions. CO2 and oil are miscible at high pressure, resulting in low viscosity and oil swells. This swelling can be measured based on mathematical calculations in real time and correlated with the CO2 concentration. This process has myriad advantages over its counterparts which include being able to harness oil trapped in reservoirs besides being cheaper and more efficient. A Diffusivity meter is inevitable in the measurement of the diffusion co-efficient of two samples. Diffusivity meters currently available in the market are weighed down by disadvantages like the requirement of large samples for testing, high cost and complexity. This elicits the need for a Microfluidic based diffusivity meter capable of analyzing Nano-liter sample volumes besides being more precise and affordable. The scope of this work involves the design and development of a Microfluidic robust and inexpensive prototype diffusivity meter using a capillary tube and endorsing its performance by comparison of results with known diffusivity range and supervision of the results with an electronic microscope coupled to PC and Data Acquisition System. The prototype produced at the end of the work is expected to outweigh disadvantages in existing products in terms of sample size, efficiency and time saving.

Onset of density-driven instabilities in fractured aquifers

Science.gov (United States)

Jafari Raad, Seyed Mostafa; Hassanzadeh, Hassan

2018-04-01

Linear stability analysis is conducted to study the onset of density-driven convection involved in solubility trapping of C O2 in fractured aquifers. The effect of physical properties of a fracture network on the stability of a diffusive boundary layer in a saturated fractured porous media is investigated using the dual porosity concept. Linear stability analysis results show that both fracture interporosity flow and fracture storativity play an important role in the stability behavior of the system. It is shown that a diffusive boundary layer under the gravity field in fractured porous media with lower fracture storativity and/or higher fracture interporosity flow coefficient is more stable. We present scaling relations for the onset of convective instability in fractured aquifers with single and variable matrix block size distribution. These findings improve our understanding of density-driven flow in fractured aquifers and are important in the estimation of potential storage capacity, risk assessment, and storage site characterization and screening.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

Science.gov (United States)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

Taylor dispersion in wind-driven current

Science.gov (United States)

Li, Gang; Wang, Ping; Jiang, Wei-Quan; Zeng, Li; Li, Zhi; Chen, G. Q.

2017-12-01

Taylor dispersion associated with wind-driven currents in channels, shallow lakes and estuaries is essential to hydrological environmental management. For solute dispersion in a wind-driven current, presented in this paper is an analytical study of the evolution of concentration distribution. The concentration moments are intensively derived for an accurate presentation of the mean concentration distribution, up to the effect of kurtosis. The vertical divergence of concentration is then deduced by Gill's method of series expansion up to the fourth order. Based on the temporal evolution of the vertical concentration distribution, the dispersion process in the wind-driven current is concretely characterized. The uniform shear leads to a special symmetrical distribution of mean concentration free of skewness. The non-uniformity of vertical concentration is caused by convection and smeared out gradually by the effect of diffusion, but fails to disappear even at large times.

Carbon dioxide sequestration: Modeling the diffusive and convective transport under a CO2 cap

KAUST Repository

Allen, Rebecca; Sun, Shuyu

2012-01-01

of low permeability. CO2 from this ‘capped' region diffuses into the fluid underlying it, and the resulting CO2-fluid mixture increases in density. This increase in density leads to gravity-driven convection. Accordingly, diffusive-convective transport

Workshop 95. Part III

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-12-31

Out of 140 short communications presented in the proceedings, 13 have been inputted into INIS. The topics covered include lifetime control in semiconductor devices by ion irradiation, single crystal scintillation detectors, environmental monitoring, diffusion and sorption of radionuclides in soils, accelerator driven reactors, radioactive waste disposal, digital reactor control systems and research reactors. (Z.S.).

Workshop 95. Part III

International Nuclear Information System (INIS)

1995-01-01

Out of 140 short communications presented in the proceedings, 13 have been inputted into INIS. The topics covered include lifetime control in semiconductor devices by ion irradiation, single crystal scintillation detectors, environmental monitoring, diffusion and sorption of radionuclides in soils, accelerator driven reactors, radioactive waste disposal, digital reactor control systems and research reactors. (Z.S.)

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Classical and quantum dynamics of driven elliptical billiards

Energy Technology Data Exchange (ETDEWEB)

Lenz, Florian

2009-12-09

Subject of this thesis is the investigation of the classical dynamics of the driven elliptical billiard and the development of a numerical method allowing the propagation of arbitrary initial states in the quantum version of the system. In the classical case, we demonstrate that there is Fermi acceleration in the driven billiard. The corresponding transport process in momentum space shows a surprising crossover from sub- to normal diffusion. This crossover is not parameter induced, but rather occurs dynamically in the evolution of the ensemble. The four-dimensional phase space is analyzed in depth, especially how its composition changes in different velocity regimes. We show that the stickiness properties, which eventually determine the diffusion, are intimately connected with this change of the composition of the phase space with respect to velocity. In the course of the evolution, the accelerating ensemble thus explores regions of varying stickiness, leading to the mentioned crossover in the diffusion. In the quantum case, a series of transformations tailored to the elliptical billiard is applied to circumvent the time-dependent Dirichlet boundary conditions. By means of an expansion ansatz, this eventually yields a large system of coupled ordinary differential equations, which can be solved by standard techniques. (orig.)

Classical and quantum dynamics of driven elliptical billiards

International Nuclear Information System (INIS)

Lenz, Florian

2009-01-01

Subject of this thesis is the investigation of the classical dynamics of the driven elliptical billiard and the development of a numerical method allowing the propagation of arbitrary initial states in the quantum version of the system. In the classical case, we demonstrate that there is Fermi acceleration in the driven billiard. The corresponding transport process in momentum space shows a surprising crossover from sub- to normal diffusion. This crossover is not parameter induced, but rather occurs dynamically in the evolution of the ensemble. The four-dimensional phase space is analyzed in depth, especially how its composition changes in different velocity regimes. We show that the stickiness properties, which eventually determine the diffusion, are intimately connected with this change of the composition of the phase space with respect to velocity. In the course of the evolution, the accelerating ensemble thus explores regions of varying stickiness, leading to the mentioned crossover in the diffusion. In the quantum case, a series of transformations tailored to the elliptical billiard is applied to circumvent the time-dependent Dirichlet boundary conditions. By means of an expansion ansatz, this eventually yields a large system of coupled ordinary differential equations, which can be solved by standard techniques. (orig.)

Theory of neoclassical ion temperature-gradient-driven turbulence

Science.gov (United States)

Kim, Y. B.; Diamond, P. H.; Biglari, H.; Callen, J. D.

1991-02-01

The theory of collisionless fluid ion temperature-gradient-driven turbulence is extended to the collisional banana-plateau regime. Neoclassical ion fluid evolution equations are developed and utilized to investigate linear and nonlinear dynamics of negative compressibility ηi modes (ηi≡d ln Ti/d ln ni). In the low-frequency limit (ωB2p. As a result of these modifications, growth rates are dissipative, rather than sonic, and radial mode widths are broadened [i.e., γ˜k2∥c2s(ηi -(2)/(3) )/μi, Δx˜ρs(Bt/Bp) (1+ηi)1/2, where k∥, cs, and ρs are the parallel wave number, sound velocity, and ion gyroradius, respectively]. In the limit of weak viscous damping, enhanced neoclassical polarization persists and broadens radial mode widths. Linear mixing length estimates and renormalized turbulence theory are used to determine the ion thermal diffusivity in both cases. In both cases, a strong favorable dependence of ion thermal diffusivity on Bp (and hence plasma current) is exhibited. Furthermore, the ion thermal diffusivity for long wavelength modes exhibits favorable density scaling. The possible role of neoclassical ion temperature-gradient-driven modes in edge fluctuations and transport in L-phase discharges and the L to H transition is discussed.

A transient thermodynamic model for track formation in amorphous semi-conductors: a possible mechanism

International Nuclear Information System (INIS)

Dufour, C.; Toulemonde, M.; Paumier, E.; Lesellier de Chezelles, B.; Delignon, V.

1991-01-01

Latent tracks have been observed in amorphous semi-conductors after heavy ion irradiation in the electronic stopping power regime. A transient thermodynamic model is developed including energy diffusion on the electron gas and on the atomic lattice and energy exchange between these two systems. A set of two non linear differential equations is solved numerically in cylindrical geometry in order to predict the radii of the latent tracks observed in amorphous germanium and silicon. A good agreement is obtained for the two materials using the same set of input parameters for the energy diffusion on the electronic system and the same coupling constant for the energy exchange between electron and lattice atoms despite the large differences in the macroscopic lattice thermodynamical parameters of the two materials

Frequency-dependent photothermal measurement of transverse thermal diffusivity of organic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Brill, J. W.; Shahi, Maryam; Yao, Y. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Payne, Marcia M.; Anthony, J. E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Edberg, Jesper; Crispin, Xavier [Department of Science and Technology, Organic Electronics, Linköping University, SE-601 74 Norrköping (Sweden)

2015-12-21

We have used a photothermal technique, in which chopped light heats the front surface of a small (∼1 mm{sup 2}) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid-nitrogen-cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the incident light, which leaks around or through the sample, measurements are made for the detector signal that is in quadrature with the chopped light. Results are presented for layered crystals of semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pn) and for papers of cellulose nanofibrils coated with semiconducting poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (NFC-PEDOT). For NFC-PEDOT, we have found that the transverse diffusivity, smaller than the in-plane value, varies inversely with thickness, suggesting that texturing of the papers varies with thickness. For TIPS-pn, we have found that the interlayer diffusivity is an order of magnitude larger than the in-plane value, consistent with previous estimates, suggesting that low-frequency optical phonons, presumably associated with librations in the TIPS side groups, carry most of the heat.

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

International Nuclear Information System (INIS)

Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

2016-01-01

A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

Diffusion-assisted selective dynamical recoupling: A new approach to measure background gradients in magnetic resonance

Science.gov (United States)

Álvarez, Gonzalo A.; Shemesh, Noam; Frydman, Lucio

2014-02-01

Dynamical decoupling, a generalization of the original NMR spin-echo sequence, is becoming increasingly relevant as a tool for reducing decoherence in quantum systems. Such sequences apply non-equidistant refocusing pulses for optimizing the coupling between systems, and environmental fluctuations characterized by a given noise spectrum. One such sequence, dubbed Selective Dynamical Recoupling (SDR) [P. E. S. Smith, G. Bensky, G. A. Álvarez, G. Kurizki, and L. Frydman, Proc. Natl. Acad. Sci. 109, 5958 (2012)], allows one to coherently reintroduce diffusion decoherence effects driven by fluctuations arising from restricted molecular diffusion [G. A. Álvarez, N. Shemesh, and L. Frydman, Phys. Rev. Lett. 111, 080404 (2013)]. The fully-refocused, constant-time, and constant-number-of-pulses nature of SDR also allows one to filter out "intrinsic" T1 and T2 weightings, as well as pulse errors acting as additional sources of decoherence. This article explores such features when the fluctuations are now driven by unrestricted molecular diffusion. In particular, we show that diffusion-driven SDR can be exploited to investigate the decoherence arising from the frequency fluctuations imposed by internal gradients. As a result, SDR presents a unique way of probing and characterizing these internal magnetic fields, given an a priori known free diffusion coefficient. This has important implications in studies of structured systems, including porous media and live tissues, where the internal gradients may serve as fingerprints for the system's composition or structure. The principles of this method, along with full analytical solutions for the unrestricted diffusion-driven modulation of the SDR signal, are presented. The potential of this approach is demonstrated with the generation of a novel source of MRI contrast, based on the background gradients active in an ex vivo mouse brain. Additional features and limitations of this new method are discussed.

Diffusion-assisted selective dynamical recoupling: A new approach to measure background gradients in magnetic resonance

International Nuclear Information System (INIS)

Álvarez, Gonzalo A.; Shemesh, Noam; Frydman, Lucio

2014-01-01

Dynamical decoupling, a generalization of the original NMR spin-echo sequence, is becoming increasingly relevant as a tool for reducing decoherence in quantum systems. Such sequences apply non-equidistant refocusing pulses for optimizing the coupling between systems, and environmental fluctuations characterized by a given noise spectrum. One such sequence, dubbed Selective Dynamical Recoupling (SDR) [P. E. S. Smith, G. Bensky, G. A. Álvarez, G. Kurizki, and L. Frydman, Proc. Natl. Acad. Sci. 109, 5958 (2012)], allows one to coherently reintroduce diffusion decoherence effects driven by fluctuations arising from restricted molecular diffusion [G. A. Álvarez, N. Shemesh, and L. Frydman, Phys. Rev. Lett. 111, 080404 (2013)]. The fully-refocused, constant-time, and constant-number-of-pulses nature of SDR also allows one to filter out “intrinsic” T 1 and T 2 weightings, as well as pulse errors acting as additional sources of decoherence. This article explores such features when the fluctuations are now driven by unrestricted molecular diffusion. In particular, we show that diffusion-driven SDR can be exploited to investigate the decoherence arising from the frequency fluctuations imposed by internal gradients. As a result, SDR presents a unique way of probing and characterizing these internal magnetic fields, given an a priori known free diffusion coefficient. This has important implications in studies of structured systems, including porous media and live tissues, where the internal gradients may serve as fingerprints for the system's composition or structure. The principles of this method, along with full analytical solutions for the unrestricted diffusion-driven modulation of the SDR signal, are presented. The potential of this approach is demonstrated with the generation of a novel source of MRI contrast, based on the background gradients active in an ex vivo mouse brain. Additional features and limitations of this new method are discussed

Mixing of III-V compound semiconductor superlattices

International Nuclear Information System (INIS)

Mei, Ping.

1989-01-01

In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

An alternative treatment of heat flow for charge transport in semiconductor devices

International Nuclear Information System (INIS)

Grupen, Matt

2009-01-01

A unique thermodynamic model of Fermi gases suitable for semiconductor device simulation is presented. Like other models, such as drift diffusion and hydrodynamics, it employs moments of the Boltzmann transport equation derived using the Fermi-Dirac distribution function. However, unlike other approaches, it replaces the concept of an electron thermal conductivity with the heat capacity of an ideal Fermi gas to determine heat flow. The model is used to simulate a field-effect transistor and show that the external current-voltage characteristics are strong functions of the state space available to the heated Fermi distribution.

Inertial effects in diffusion-limited reactions

International Nuclear Information System (INIS)

Dorsaz, N; Foffi, G; De Michele, C; Piazza, F

2010-01-01

Diffusion-limited reactions are commonly found in biochemical processes such as enzyme catalysis, colloid and protein aggregation and binding between different macromolecules in cells. Usually, such reactions are modeled within the Smoluchowski framework by considering purely diffusive boundary problems. However, inertial effects are not always negligible in real biological or physical media on typical observation time frames. This is all the more so for non-bulk phenomena involving physical boundaries, that introduce additional time and space constraints. In this paper, we present and test a novel numerical scheme, based on event-driven Brownian dynamics, that allows us to explore a wide range of velocity relaxation times, from the purely diffusive case to the underdamped regime. We show that our algorithm perfectly reproduces the solution of the Fokker-Planck problem with absorbing boundary conditions in all the regimes considered and is thus a good tool for studying diffusion-guided reactions in complex biological environments.

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Science.gov (United States)

Kammermeier, Michael; Wenk, Paul; Schliemann, John; Heedt, Sebastian; Gerster, Thomas; Schäpers, Thomas

2017-12-01

We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-orbit coupling resulting from a zinc-blende lattice and the Rashba spin-orbit coupling, which is controlled by a lateral gate electrode. The spin relaxation rate due to Dresselhaus spin-orbit coupling is found to depend neither on the spin density component nor on the wire growth direction and is unaffected by the radial boundary. In contrast, the Rashba spin relaxation rate is strongly reduced for a wire radius that is smaller than the spin precession length. The derived model is fitted to the data of magnetoconductance measurements of a heavily doped back-gated InAs nanowire and transport parameters are extracted. At last, we compare our results to previous theoretical and experimental studies and discuss the occurring discrepancies.

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Self-assembling peptide semiconductors

Science.gov (United States)

Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

2017-01-01

Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

Semiconductors for plasmonics and metamaterials

DEFF Research Database (Denmark)

Naik, G.V.; Boltasseva, Alexandra

2010-01-01

Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve.

Science.gov (United States)

Fesenko, Pavlo; Flauraud, Valentin; Xie, Shenqi; Kang, Enpu; Uemura, Takafumi; Brugger, Jürgen; Genoe, Jan; Heremans, Paul; Rolin, Cédric

2017-07-19

To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation density, whereas the aperture-to-aperture distance of 0.5 μm provides sufficient crosstalk between neighboring apertures through the diffusion of adsorbed molecules. By integrating the nanosieve in the channel area of a thin-film transistor mask, we show a route for patterning both the organic semiconductor and the metal contacts of thin-film transistors using one mask only and without mask realignment.

Mn-AlInN: a new diluted magnetic semiconductor

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar; Sharif, Rehana; Zhu, J.J.

2009-01-01

Mn ions have been incorporated into MOCVD grown Al 1-x In x N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∝260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T c above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

Spin physics in semiconductors

CERN Document Server

2017-01-01

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Oxide semiconductors

CERN Document Server

Svensson, Bengt G; Jagadish, Chennupati

2013-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

Semiconductor statistics

CERN Document Server

Blakemore, J S

1962-01-01

Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

International Nuclear Information System (INIS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Meunier, Michel

2009-01-01

Electronic-behavior modeling of three-dimensional (3D) p + -π-p + and n + -ν-n + semiconducting diffusible devices with highly accurate resistances for the design of analog resistors, which are compatible with the CMOS (complementary-metal-oxide-semiconductor) technologies, is performed in three dimensions with the fast tube multiplexing method (TMM). The current–voltage (I–V) curve of a silicon device is usually computed with traditional device simulators of technology computer-aided design (TCAD) based on the finite-element method (FEM). However, for the design of 3D p + -π-p + and n + -ν-n + diffusible resistors, they show a high computational cost and convergence that may fail with fully non-separable 3D dopant concentration profiles as observed in many diffusible resistors resulting from laser trimming. These problems are avoided with the proposed TMM, which divides the 3D resistor into one-dimensional (1D) thin tubes with longitudinal axes following the main orientation of the average electrical field in the tubes. The I–V curve is rapidly obtained for a device with a realistic 3D dopant profile, since a system of three first-order ordinary differential equations has to be solved for each 1D multiplexed tube with the TMM instead of three second-order partial differential equations in the traditional TCADs. Simulations with the TMM are successfully compared to experimental results from silicon-based 3D resistors fabricated by laser-induced dopant diffusion in the gaps of MOSFETs (metal-oxide-semiconductor field-effect transistors) without initial gate. Using thin tubes with other shapes than parallelepipeds as ring segments with toroidal lateral surfaces, the TMM can be generalized to electronic devices with other types of 3D diffusible microstructures

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

Science.gov (United States)

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

KMC Simulation of Surface Growth of Semiconductors

International Nuclear Information System (INIS)

Esen, M.

2004-01-01

In this work we have studied the growth and equilibration of semiconductor surfaces consisting of monoatomic steps separated by flat terraces using kinetic Monte Carlo method. Atomistic processes such as diffusion on terraces, attachment/detachment particles to/from step edges, attachment of particles from an upper terrace to a bounding step, diffusion of particles along step edges are considered. A rate equation for each, these processes is written and the overall transition probabilities are calculated where processes are ordered to make the distinction between slow and fast processes Iractal The interaction of steps is also included in the calculation of rate equations. The growth of such a surface is simulated when there is a particle flux to the surface. The rough of the surface and its dependence on both temperature and kinetic parameters such edge diffusion barrier are investigated. The formation of islands on terraces is prohibited and the distribution of their number and sizes are investigated as a function of temperature and appropriate kinetic parameters. In the absence of a flux to the surface, the equilibration of the surface is investigated paying particular attention to the top of the profile when the initial surface is a periodic profile where parallel monoatomic steps separated by terraces. It is observed that during equilibration of the profile, the topmost step disintegrates quickly and leads to many islands on the top of the profile due to. collision and annihilation of step edges of opposite sign. The islands then quickly disintegrate due to the line tension effect and this scenario repeats itself until the surface completely flattens

Application of a numerical transport correction in diffusion calculations

International Nuclear Information System (INIS)

Tomatis, Daniele; Dall'Osso, Aldo

2011-01-01

Full core calculations by ordinary transport methods can demand considerable computational time, hardly acceptable in the industrial work frame. However, the trend of next generation nuclear cores goes toward more heterogeneous systems, where transport phenomena of neutrons become very important. On the other hand, using diffusion solvers is more practical allowing faster calculations, but a specific formulation of the diffusion coefficient is requested to reproduce the scalar flux with reliable physical accuracy. In this paper, the Ronen method is used to evaluate numerically the diffusion coefficient in the slab reactor. The new diffusion solution is driven toward the solution of the integral neutron transport equation by non linear iterations. Better estimates of currents are computed and diffusion coefficients are corrected at node interfaces, still assuming Fick's law. This method enables obtaining closer results to the transport solution by a common solver in multigroup diffusion. (author)

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1992-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

Coherent diffusive transport mediated by Andreev reflections at V=Delta/e in a mesoscopic superconductor/semiconductor/superconductor junction

DEFF Research Database (Denmark)

Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Kuhn, Oliver

1997-01-01

We present experiments revealing a singularity in the coherent current across a superconductor/semiconductor/superconductor (SSmS) junction at the bias voltage corresponding to the superconducting energy gap V=Delta/e. The SSmS structure consists of highly doped GaAs with superconducting electrodes...

The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

Science.gov (United States)

Chantis, Athanasios

2009-03-01

I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

Development of a direct solar driven diffusion absorption chiller; Entwicklung einer direkt solarthermisch angetriebenen Diffusions-Absorptionskaeltemaschine

Energy Technology Data Exchange (ETDEWEB)

Schmid, Fabian; Bierling, Bernd; Spindler, Klaus [Stuttgart Univ. (Germany). Inst. fuer Thermodynamik und Waermetechnik (ITW)

2013-03-15

At the ITW, a decentralized solar cooling system is developed based on the diffusion-absorption refrigeration cycle. The generator and the bubble pump of the process are integrated in a solar collector, and therefore directly heated. The main research focus after reaching a stable operation of the system is a detailed investigation of the auxiliary gas circuit. (orig.)

A nonlinear equation for ionic diffusion in a strong binary electrolyte

Science.gov (United States)

Ghosal, Sandip; Chen, Zhen

2010-01-01

The problem of the one-dimensional electro-diffusion of ions in a strong binary electrolyte is considered. The mathematical description, known as the Poisson–Nernst–Planck (PNP) system, consists of a diffusion equation for each species augmented by transport owing to a self-consistent electrostatic field determined by the Poisson equation. This description is also relevant to other important problems in physics, such as electron and hole diffusion across semiconductor junctions and the diffusion of ions in plasmas. If concentrations do not vary appreciably over distances of the order of the Debye length, the Poisson equation can be replaced by the condition of local charge neutrality first introduced by Planck. It can then be shown that both species diffuse at the same rate with a common diffusivity that is intermediate between that of the slow and fast species (ambipolar diffusion). Here, we derive a more general theory by exploiting the ratio of the Debye length to a characteristic length scale as a small asymptotic parameter. It is shown that the concentration of either species may be described by a nonlinear partial differential equation that provides a better approximation than the classical linear equation for ambipolar diffusion, but reduces to it in the appropriate limit. PMID:21818176

Nonlinear Elasticity of Doped Semiconductors

Science.gov (United States)

2017-02-01

AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

DEFF Research Database (Denmark)

Nielsen, Otto M.

1983-01-01

of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

Semiconductor radiation detection systems

CERN Document Server

2010-01-01

Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1995-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

What is the real value of diffusion length in GaN?

International Nuclear Information System (INIS)

Yakimov, E.B.

2015-01-01

Highlights: • The applicability of SEM methods for diffusion length measurements in GaN is discussed. • The discussion is based on our own experiments and on the available literature data. • A study of EBIC dependence on beam energy suits well for a small diffusion length. • The most reliable diffusion length values in the state-of-the-art n-GaN are evaluated. - Abstract: The applicability of scanning electron microscopy methods for excess carrier diffusion length measurements in GaN is discussed. The discussion is based on author’s experiments and on the available literature data. It is shown that for semiconductors with submicron diffusion length special attention should be paid to the choice of measuring method and experimental conditions. Some reasons for diffusion length overestimation and underestimation are analyzed. It is shown that a measurement of collected current dependence on electron beam energy is the most suitable method for submicron diffusion length evaluations because it is much easier to meet conditions for a proper application of this method than for other widely used methods. The analysis of data previously reported in literature and author’s results have shown that the diffusion length values in the range from 70 to 400 nm are the most reliable for state-of-the-art n-GaN epilayers

Deuterium permeation and diffusion in high-purity beryllium

International Nuclear Information System (INIS)

Abramov, E.; Riehm, M.P.; Thompson, D.A.; Smeltzer, W.W.

1990-01-01

The permeation rate of deuterium through high-purity beryllium membranes was measured using the gas-driven permeation technique. The time-dependent and the steady-state deuterium flux data were analyzed and the effective diffusivities of the samples were determined. Using multilayer permeation theory the effects of surface oxide were eliminated and the diffusion coefficients of the bulk beryllium determined. The diffusion parameters obtained for the extra-grade beryllium samples (99.8%) are D 0 =6.7x10 -9 m 2 /s and E D =28.4 kJ/mol. For the high-grade beryllium samples (99%) the parameters are D 0 =8.0x10 -9 m 2 /s and E D =35.1 kJ/mol. (orig.)

II-VI semiconductor compounds

CERN Document Server

1993-01-01

For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

Suitable Fundamental Properties of Ta0.75V0.25ON Material for Visible-Light-Driven Photocatalysis: A DFT Study

KAUST Repository

Harb, Moussab; Cavallo, Luigi

2016-01-01

By applying calculations based on density functional theory, and on density functional perturbation theory, together with generalized gradient approximation-Perdew–Burke–Emzerho and screened Coulomb hybrid HSE06 functionals, we predict novel and suitable fundamental parameters of the stable monoclinic Ta0.75V0.25ON semiconductor for solar water splitting. In addition to its predicted bandgap of 2.0 eV in the required zone for solar-driven water splitting, this material reveals a high visible-light absorption coefficient, high static dielectric constant, high hole and electron mobilities along the [001] and [010] crystallographic directions, relatively low exciton binding energy, and suitable band edge energy levels for oxidizing water and reducing protons. The optical, charge-carrier transport, and redox features predicted for this material are found to be considerably better than those obtained for Ta3N5, which is the most common semiconductor photocatalyst used in visible-light-driven water splitting.

Suitable Fundamental Properties of Ta0.75V0.25ON Material for Visible-Light-Driven Photocatalysis: A DFT Study

KAUST Repository

Harb, Moussab

2016-11-29

By applying calculations based on density functional theory, and on density functional perturbation theory, together with generalized gradient approximation-Perdew–Burke–Emzerho and screened Coulomb hybrid HSE06 functionals, we predict novel and suitable fundamental parameters of the stable monoclinic Ta0.75V0.25ON semiconductor for solar water splitting. In addition to its predicted bandgap of 2.0 eV in the required zone for solar-driven water splitting, this material reveals a high visible-light absorption coefficient, high static dielectric constant, high hole and electron mobilities along the [001] and [010] crystallographic directions, relatively low exciton binding energy, and suitable band edge energy levels for oxidizing water and reducing protons. The optical, charge-carrier transport, and redox features predicted for this material are found to be considerably better than those obtained for Ta3N5, which is the most common semiconductor photocatalyst used in visible-light-driven water splitting.

Thermonuclear-driven fast magnetosonic-wave heating in tokamak plasmas

International Nuclear Information System (INIS)

Sutton, W.R. III.

1982-01-01

A thermonuclear driven fast magnetosonic wave instability is investigated in tokamak plasmas for propagation transverse to the external magnetic field at frequencies of several times the alpha particle gyro rate: ω approx. = L Ω/sub α/ = k/sub perpendicular/ v/sub A/, L approx. 4 to 8, k/sub parallel/ << k/sub perpendicular/. The 2-D differential quasi-linear diffusion equation is derived in circular cylindrical, v/sub perpendicular/-v/sub parallel/ geometry. We perform an expansion in the small parameter k/sub parallel/k/sub perpendicucular/ of the quasi-linear diffusion coefficients

Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as seen via Microphotoluminescence

Science.gov (United States)

Mascarenhas, Angelo; Fluegel, Brian; Alberi, Kirstin; Zhang, Yong-Hang

2015-03-01

The ability to spatially resolve the degree to which extended defects impact carrier diffusion lengths and lifetimes is important for determining upper limits for defect densities in semiconductor devices. We show that a new spatially and temporally resolved photoluminescence (PL) imaging technique can be used to accurately extract carrier lifetimes in the immediate vicinity of dark-line defects in CdTe/MgCdTe double heterostructures. A series of PL images captured during the decay process show that extended defects with a density of 1.4x10-5 cm-2 deplete photogenerated charge carriers from the surrounding semiconductor material on a nanosecond time scale. The technique makes it possible to elucidate the interplay between nonradiative carrier recombination and carrier diffusion and reveals that they both combine to degrade the PL intensity over a fractional area that is much larger than the physical size of the defects. Carrier lifetimes are correctly determined from numerical simulations of the decay behavior by taking these two effects into account. Our study demonstrates that it is crucial to measure and account for the influence of local defects in the measurement of carrier lifetime and diffusion, which are key transport parameters for the design and modeling of advanced solar-cell and light-emitting devices. We acknowledge the financial support of the Department of Energy Office of Science under Grant No. DE-AC36-08GO28308.

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Double Diffusive Natural Convection in a Nuclear Waste Repository

International Nuclear Information System (INIS)

Y. Hao; J. Nitao; T.A. Buscheck; Y. Sun

2006-01-01

In this study, we conduct a two-dimensional numerical analysis of double diffusive natural convection in an emplacement drift for a nuclear waste repository. In-drift heat and moisture transport is driven by combined thermal- and compositional-induced buoyancy forces. Numerical results demonstrate buoyancy-driven convective flow patterns and configurations during both repository heat-up and cool-down phases. It is also shown that boundary conditions, particularly on the drip-shield surface, have strong impacts on the in-drift convective flow and transport

Semiconductors bonds and bands

CERN Document Server

Ferry, David K

2013-01-01

As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

Nonequilibrium relation between potential and stationary distribution for driven diffusion

Czech Academy of Sciences Publication Activity Database

Maes, C.; Netočný, Karel; Shergelashvili, B.M.

2009-01-01

Roč. 80, č. 1 (2009), 011121/1-011121/10 ISSN 1539-3755 R&D Projects: GA ČR GA202/07/0404 Institutional research plan: CEZ:AV0Z10100520 Keywords : diffusion * fluctuations * inverse problems Subject RIV: BE - Theoretical Physics Impact factor: 2.400, year: 2009 http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PLEEE8000080000001011121000001&idtype=cvips&gifs=Yes

Size effects in many-valley fluctuations in semiconductors

International Nuclear Information System (INIS)

Sokolov, V.N.; Kochelap, V.A.

1995-08-01

We present the results of theoretical investigations of nonhomogeneous fluctuations in submicron active regions of many-valley semiconductors with equivalent valleys(Ge, Si-type), where the dimension 2d of the region is comparable to or less than the intervalley diffusion relaxation length L iv . It is shown that for arbitrary orientations of the valley axes (the crystal axes) with respect to lateral sample surfaces, the fluctuation spectra depend on the bias voltage applied to the layer in the region of weak nonheating electric fields. The new physical phenomenon is reported: the fluctuation spectra depend on the sample thickness, with 2d iv the suppression of fluctuations arises for fluctuation frequencies ω -1 iv , τ -1 iv is the characteristic intervalley relaxation time. (author). 43 refs, 5 figs

Dimer-flipping-assisted diffusion on a Si(001) surface

International Nuclear Information System (INIS)

Zi, J.; Min, B. J.; Lu, Y.; Wang, C. Z.; Ho, K. M.

2000-01-01

The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows

Diffusion in plasma: The Hall effect, compositional waves, and chemical spots

Energy Technology Data Exchange (ETDEWEB)

Urpin, V., E-mail: Vadim.urpin@uv.es [Ioffe Institute of Physics and Technology (Russian Federation)

2017-03-15

Diffusion caused by a combined influence of the electric current and Hall effect is considered, and it is argued that such diffusion can form inhomogeneities of a chemical composition in plasma. The considered mechanism can be responsible for the formation of element spots in laboratory and astrophysical plasmas. This current-driven diffusion can be accompanied by propagation of a particular type of waves in which the impurity number density oscillates alone. These compositional waves exist if the magnetic pressure in plasma is much greater than the gas pressure.

Diffusion and transport in locally disordered driven lattices

International Nuclear Information System (INIS)

Wulf, Thomas; Okupnik, Alexander; Schmelcher, Peter

2016-01-01

We study the effect of disorder on the particle density evolution in a classical Hamiltonian driven lattice setup. If the disorder is localized within a finite sub-domain of the lattice, the emergence of strong tails in the density distribution which even increases towards larger positions is shown, thus yielding a highly non-Gaussian particle density evolution. As the key underlying mechanism, we identify the conversion between different components of the unperturbed systems mixed phase space which is induced by the disorder. Based on the introduction of individual conversion rates between chaotic and regular components, a theoretical model is developed which correctly predicts the scaling of the particle density. The effect of disorder on the transport properties is studied where a significant enhancement of the transport for cases of localized disorder is shown, thereby contrasting strongly the merely weak modification of the transport for global disorder.

Diffusion and transport in locally disordered driven lattices

Energy Technology Data Exchange (ETDEWEB)

Wulf, Thomas, E-mail: Thomas.Wulf@physnet.uni-hamburg.de; Okupnik, Alexander [Zentrum für Optische Quantentechnologien, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany); Schmelcher, Peter, E-mail: Peter.Schmelcher@physnet.uni-hamburg.de [Zentrum für Optische Quantentechnologien, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany); The Hamburg Centre for Ultrafast Imaging, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany)

2016-09-15

We study the effect of disorder on the particle density evolution in a classical Hamiltonian driven lattice setup. If the disorder is localized within a finite sub-domain of the lattice, the emergence of strong tails in the density distribution which even increases towards larger positions is shown, thus yielding a highly non-Gaussian particle density evolution. As the key underlying mechanism, we identify the conversion between different components of the unperturbed systems mixed phase space which is induced by the disorder. Based on the introduction of individual conversion rates between chaotic and regular components, a theoretical model is developed which correctly predicts the scaling of the particle density. The effect of disorder on the transport properties is studied where a significant enhancement of the transport for cases of localized disorder is shown, thereby contrasting strongly the merely weak modification of the transport for global disorder.

Observation of Hg-diffusion in CdTe using heavy ion (40MeV-O5+) backscattering

International Nuclear Information System (INIS)

Otake, H.; Takita, K.; Murakami, K.; Masuda, K.; Kudo, H.; Seki, S.

1984-01-01

Diffusion of Hg in the near-surface region of CdTe crystals was observed by means of 40MeV-O 5+ ion backscattering. CdTe crystals immersed in Hg were kept in furnace at 280 -- 340 0 C for 2 -- 240hours. The backscattering spectra of these crystals were measured. The concentration of the diffused Hg atoms in the surface reached to 4 x 10 20 cm -3 , and Hg distribution was observed up to 1.4 μm from surface. Temperature dependence of the diffusion coefficients was determined as D = 5 x 10 3 exp (-2.0 +- 0.3eV/kT) cm 2 /sec. Hg-diffusion was not observed in the case of CdTe kept in Hg with a small amount of Cd. These facts suggest that Hg diffusion is controlled by the diffusion of Cd-vacancy. A method of observing the Hg-atoms profile in the near-surface region of the semiconductor was established. (author)

Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

Science.gov (United States)

Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

2018-02-01

Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

Roadmap on semiconductor-cell biointerfaces

Science.gov (United States)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

Agent-based Modeling Automated: Data-driven Generation of Innovation Diffusion Models

NARCIS (Netherlands)

Jensen, T.; Chappin, E.J.L.

2016-01-01

Simulation modeling is useful to gain insights into driving mechanisms of diffusion of innovations. This study aims to introduce automation to make identification of such mechanisms with agent-based simulation modeling less costly in time and labor. We present a novel automation procedure in which

Market-Driven Management: the Policy Implications

OpenAIRE

Bellini, Nicola

2008-01-01

The first policy implication of the diffusion of a Market-Driven Management approach is the same as the spreading of globalization, i.e. the obsolescence of industrial policies as traditionally designed and managed by Nation-States with the established toolbox of protectionism and subsidies, picking 'national champions', etc. The growing asymmetry between the physical jurisdiction of political bodies and the global operation space of modern corporations feeds the apparent trend toward company...

Solar systems diffusion in local markets

International Nuclear Information System (INIS)

Sidiras, D.K.; Koukios, E.G.

2004-01-01

This paper reports on a study of the driving forces and barriers of the spectacular diffusion of solar energy use for domestic hot-water production in Greece. Through the various kinds of questionnaires used in this work, the main diffusion actors have been requested to grade the various diffusion factors identified by desk and preliminary field research. Households identify a number of economic (available family income), technical (new technologies), political (new incentives), and socio-cultural (sensitivity in energy matters) factors as dominant. According to the solar industry, advertising, distribution and quality control standards have to be added to the list of critical factors. Technical experts contribute with identifying, besides R and D, public awareness on energy matters. Solar collector diffusion, despite the fact that it has followed a market-driven mechanism, was revealed to be a multi-actor, multi-dimensional and multi-parametric phenomenon. Presently, the phenomenon is constrained by the available family income, with technology-related factors, i.e., research, and standardization quality control, playing increasing roles

Mn-AlInN: a new diluted magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul; Ali, Akbar [Quaid-i-Azam University, Advance Materials Physics Laboratory, Physics Department, Islamabad (Pakistan); Sharif, Rehana [University of Engineering and Technology, Department of Physics, Lahore (Pakistan); Zhu, J.J. [Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing (China)

2009-09-15

Mn ions have been incorporated into MOCVD grown Al{sub 1-x}In{sub x}N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at {proportional_to}260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T{sub c} above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

Carbon out-diffusion mechanism for direct graphene growth on a silicon surface

International Nuclear Information System (INIS)

Kim, Byung-Sung; Lee, Jong Woon; Jang, Yamujin; Choi, Soon Hyung; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Joo, Won-Jae; Hwang, Sungwoo; Whang, Dongmok

2015-01-01

Direct growth of graphene on silicon (Si) through chemical vapor deposition has predominantly focused on surface-mediated processes due to the low carbon (C) solubility in Si. However, a considerable quantity of C atoms was incorporated in Si and formed Si 1−x C x alloy with a reduced lattice dimension even in the initial stage of direct graphene growth. Subsequent high temperature annealing promoted active C out-diffusion, resulting in the formation of a graphitic layer on the Si surface. Furthermore, the significantly low thermal conductivity of the Si 1−x C x alloy shows that the incorporated C atoms affect the properties of a semiconductor adjacent to the graphene. These findings provide a key guideline for controlling desirable properties of graphene and designing hybrid semiconductor/graphene architectures for various applications

Photo-induced transformation process at gold clusters-semiconductor interface: Implications for the complexity of gold clusters-based photocatalysis

Science.gov (United States)

Liu, Siqi; Xu, Yi-Jun

2016-03-01

The recent thrust in utilizing atomically precise organic ligands protected gold clusters (Au clusters) as photosensitizer coupled with semiconductors for nano-catalysts has led to the claims of improved efficiency in photocatalysis. Nonetheless, the influence of photo-stability of organic ligands protected-Au clusters at the Au/semiconductor interface on the photocatalytic properties remains rather elusive. Taking Au clusters-TiO2 composites as a prototype, we for the first time demonstrate the photo-induced transformation of small molecular-like Au clusters to larger metallic Au nanoparticles under different illumination conditions, which leads to the diverse photocatalytic reaction mechanism. This transformation process undergoes a diffusion/aggregation mechanism accompanied with the onslaught of Au clusters by active oxygen species and holes resulting from photo-excited TiO2 and Au clusters. However, such Au clusters aggregation can be efficiently inhibited by tuning reaction conditions. This work would trigger rational structural design and fine condition control of organic ligands protected-metal clusters-semiconductor composites for diverse photocatalytic applications with long-term photo-stability.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Introduction to Semiconductor Devices

Science.gov (United States)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Scanning electron microscopy of semiconductor materials

International Nuclear Information System (INIS)

Bresse, J.F.; Dupuy, M.

1978-01-01

The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

Deuterium permeation and diffusion in high purity beryllium

International Nuclear Information System (INIS)

Abramov, E.

1990-05-01

The permeation rate of deuterium through high-purity beryllium membranes was measured using the gas-driven permeation technique. The time-dependent and the steady-state deuterium flux data were analyzed and the effective diffusivities of the samples were determined. A multilayer permeation theory was used in order to eliminate the surface oxide effects and the diffusion coefficients of the bulk beryllium were determined. The diffusion parameters obtained for the extra-grade beryllium samples (99.8%) are D 0 = 6.7 x 10 -9 [m 2 /s] and E D = 28.4 [KJ/mol]; and for the high-grade beryllium samples (99%) the parameters are D 0 = 8.0 x 10 -9 [m 2 /s] and E D = 35.1 [KJ/mol

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1990-01-01

The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1989-01-01

The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

International Nuclear Information System (INIS)

Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

2006-01-01

The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

Science.gov (United States)

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.

Overview of atomic layer etching in the semiconductor industry

International Nuclear Information System (INIS)

Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

2015-01-01

Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices

Overview of atomic layer etching in the semiconductor industry

Energy Technology Data Exchange (ETDEWEB)

Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

2015-03-15

Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

Spin physics in semiconductors

CERN Document Server

Dyakonov, Mikhail I

2008-01-01

This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Consistency properties of chaotic systems driven by time-delayed feedback

Science.gov (United States)

Jüngling, T.; Soriano, M. C.; Oliver, N.; Porte, X.; Fischer, I.

2018-04-01

Consistency refers to the property of an externally driven dynamical system to respond in similar ways to similar inputs. In a delay system, the delayed feedback can be considered as an external drive to the undelayed subsystem. We analyze the degree of consistency in a generic chaotic system with delayed feedback by means of the auxiliary system approach. In this scheme an identical copy of the nonlinear node is driven by exactly the same signal as the original, allowing us to verify complete consistency via complete synchronization. In the past, the phenomenon of synchronization in delay-coupled chaotic systems has been widely studied using correlation functions. Here, we analytically derive relationships between characteristic signatures of the correlation functions in such systems and unequivocally relate them to the degree of consistency. The analytical framework is illustrated and supported by numerical calculations of the logistic map with delayed feedback for different replica configurations. We further apply the formalism to time series from an experiment based on a semiconductor laser with a double fiber-optical feedback loop. The experiment constitutes a high-quality replica scheme for studying consistency of the delay-driven laser and confirms the general theoretical results.

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

Directory of Open Access Journals (Sweden)

Yoshihiro Irokawa

2011-01-01

Full Text Available In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations.

Automation and Integration in Semiconductor Manufacturing

OpenAIRE

Liao, Da-Yin

2010-01-01

Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

International Nuclear Information System (INIS)

Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

2016-01-01

The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception–and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In 2 O 3 (ITO)—converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein–Moss shift that are consistent with previous studies on In 2 O 3 single crystals and thin films. - Highlights: • The Tauc method of band gap measurement is re-evaluated for crystalline materials. • Graphical method proposed for extracting optical band gaps from absorption spectra. • The proposed method incorporates an energy broadening term for energy transitions. • Values for ITO were self-consistent between two different measurement methods.

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Wong-Zakai approximations and attractors for stochastic reaction-diffusion equations on unbounded domains

Science.gov (United States)

Wang, Xiaohu; Lu, Kening; Wang, Bixiang

2018-01-01

In this paper, we study the Wong-Zakai approximations given by a stationary process via the Wiener shift and their associated long term behavior of the stochastic reaction-diffusion equation driven by a white noise. We first prove the existence and uniqueness of tempered pullback attractors for the Wong-Zakai approximations of stochastic reaction-diffusion equation. Then, we show that the attractors of Wong-Zakai approximations converges to the attractor of the stochastic reaction-diffusion equation for both additive and multiplicative noise.

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Diode having trenches in a semiconductor region

Energy Technology Data Exchange (ETDEWEB)

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Light-field-driven currents in graphene

Science.gov (United States)

Higuchi, Takuya; Heide, Christian; Ullmann, Konrad; Weber, Heiko B.; Hommelhoff, Peter

2017-10-01

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10-15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10-18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in

Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

2011-01-01

The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

Ultralong Radiative States in Hybrid Perovskite Crystals: Compositions for Submillimeter Diffusion Lengths

KAUST Repository

Alarousu, Erkki

2017-08-29

Organic-inorganic hybrid perovskite materials have recently evolved into the leading candidate solution-processed semiconductor for solar cells due to their combination of desirable optical and charge transport properties. Chief among these properties is the long carrier diffusion length, which is essential to optimizing the device architecture and performance. Herein, we used time-resolved photoluminescence (at low excitation fluence, 10.59 μJ·cm upon two-photon excitation), which is the most accurate and direct approach to measure the radiative charge carrier lifetime and diffusion lengths. Lifetimes of about 72 and 4.3 μs for FAPbBr and FAPbI perovskite single crystals have been recorded, presenting the longest radiative carrier lifetimes reported to date for perovskite materials. Subsequently, carrier diffusion lengths of 107.2 and 19.7 μm are obtained. In addition, we demonstrate the key role of the organic cation units in modulating the carrier lifetime and its diffusion lengths, in which the defect formation energies for FA cations are much higher than those with the MA ones.

Ultrafast THz Saturable Absorption in Doped Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hoffmann, Matthias C.

2011-01-01

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Rueda-Fonseca, P.; Orrù, M. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Institut NEEL, F-38000 Grenoble (France); CEA, INAC, F-38000 Grenoble (France); Bellet-Amalric, E.; Robin, E. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC, F-38000 Grenoble (France); Den Hertog, M.; Genuist, Y.; André, R.; Tatarenko, S.; Cibert, J., E-mail: joel.cibert@neel.cnrs.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Institut NEEL, F-38000 Grenoble (France)

2016-04-28

With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires (NWs) by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusion-limited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.

Diffuse scattering from hemispherical nanoparticles at the air–silicon interface

International Nuclear Information System (INIS)

Centeno, Anthony; Ahmed, Badar; Reehal, Haricharan; Xie, Fang

2013-01-01

There has been much recent interest in the application of plasmonics to improve the efficiency of silicon solar cells. In this paper we use finite difference time domain calculations to investigate the placement of hemispherical gold nanoparticles on the rear surface of a silicon solar cell. The results indicate that nanoparticles protruding into the silicon, rather than into air, have a larger scattering efficiency and diffuse scattering into the semiconductor. This finding could lead to improved light trapping within a thin silicon solar cell device. (paper)

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping

Science.gov (United States)

Sun, Zhuting; Burgess, Tim; Tan, H. H.; Jagadish, Chennupati; Kogan, Andrei

2018-04-01

We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatures T. The wire resistance R W and the zero bias resistance R C, dominated by the contacts, exhibit very different responses to temperature changes. While R W shows almost no dependence on T, R C varies by several orders of magnitude as the devices are cooled from room temperature to T = 5 K. We develop a model that employs a sharp donor level very low in the GaAs conduction band and show that our observations are consistent with the model predictions. We then demonstrate that such measurements can be used to estimate carrier properties in nanostructured semiconductors and obtain an estimate for N D, the doping density in our samples. We also discuss the effects of surface states and dielectric confinement on carrier density in semiconductor nanowires.

From convection rolls to finger convection in double-diffusive turbulence

NARCIS (Netherlands)

Yang, Yantao; Verzicco, Roberto; Lohse, Detlef

2015-01-01

Double-diffusive convection (DDC), which is the buoyancy-driven flow with fluid density depending on two scalar components, is ubiquitous in many natural and engineering environments. Of great interests are scalars’ transfer rate and flow structures. Here we systematically investigate DDC flow

Epitaxy of semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Krogstrup, P.; Ziino, N.L.B.; Chang, W.

2015-01-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Turing instability for a competitor-competitor-mutualist model with nonlinear cross-diffusion effects

International Nuclear Information System (INIS)

Wen, Zijuan; Fu, Shengmao

2016-01-01

This paper deals with a strongly coupled reaction-diffusion system modeling a competitor-competitor-mutualist three-species model with diffusion, self-diffusion and nonlinear cross-diffusion and subject to Neumann boundary conditions. First, we establish the persistence of a corresponding reaction-diffusion system without self- and cross-diffusion. Second, the global asymptotic stability of the unique positive equilibrium for weakly coupled PDE system is established by using a comparison method. Moreover, under certain conditions about the intra- and inter-species effects, we prove that the uniform positive steady state is linearly unstable for the cross-diffusion system when one of the cross-diffusions is large enough. The results indicate that Turing instability can be driven solely from strong diffusion effect of the first species (or the second species or the third species) due to the pressure of the second species (or the first species).

Geometrical effects on the electron residence time in semiconductor nano-particles.

Science.gov (United States)

Koochi, Hakimeh; Ebrahimi, Fatemeh

2014-09-07

We have used random walk (RW) numerical simulations to investigate the influence of the geometry on the statistics of the electron residence time τ(r) in a trap-limited diffusion process through semiconductor nano-particles. This is an important parameter in coarse-grained modeling of charge carrier transport in nano-structured semiconductor films. The traps have been distributed randomly on the surface (r(2) model) or through the whole particle (r(3) model) with a specified density. The trap energies have been taken from an exponential distribution and the traps release time is assumed to be a stochastic variable. We have carried out (RW) simulations to study the effect of coordination number, the spatial arrangement of the neighbors and the size of nano-particles on the statistics of τ(r). It has been observed that by increasing the coordination number n, the average value of electron residence time, τ̅(r) rapidly decreases to an asymptotic value. For a fixed coordination number n, the electron's mean residence time does not depend on the neighbors' spatial arrangement. In other words, τ̅(r) is a porosity-dependence, local parameter which generally varies remarkably from site to site, unless we are dealing with highly ordered structures. We have also examined the effect of nano-particle size d on the statistical behavior of τ̅(r). Our simulations indicate that for volume distribution of traps, τ̅(r) scales as d(2). For a surface distribution of traps τ(r) increases almost linearly with d. This leads to the prediction of a linear dependence of the diffusion coefficient D on the particle size d in ordered structures or random structures above the critical concentration which is in accordance with experimental observations.

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Optical coherent control in semiconductors

DEFF Research Database (Denmark)

Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

2001-01-01

of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

Semiconductor materials and their properties

NARCIS (Netherlands)

Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

2017-01-01

Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Nuclear radiation detection by a variband semiconductor

International Nuclear Information System (INIS)

Volkov, A.S.

1981-01-01

Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

Energy Technology Data Exchange (ETDEWEB)

Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp [National Institute of Technology, Kagawa College, Kagawa, Mitoyo, Takuma, Koda 551 (Japan); Tsuji, Takuto [National Institute of Technology, Suzuka College, Mie, Suzuka, Shiroko (Japan); Wakahara, Akihiro [Toyohashi University of Technology, Aichi, Toyohashi, Tenpaku, Hibarigaoka 1-1 (Japan); Rusop, Mohamad [University Technology Mara, Selangor, Shah Alam, 40450 (Malaysia)

2016-07-06

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

Quantum transport in semiconductor nanowires

NARCIS (Netherlands)

Van Dam, J.

2006-01-01

This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

Quantum optics with semiconductor nanostructures

CERN Document Server

Jahnke, Frank

2012-01-01

A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

Ion-driven deuterium permeation through tungsten at high temperatures

Science.gov (United States)

Gasparyan, Yu. M.; Golubeva, A. V.; Mayer, M.; Pisarev, A. A.; Roth, J.

2009-06-01

The ion-driven permeation (IDP) through 50 μm thick pure tungsten foils was measured in the temperature range of 823-923 K during irradiation by 200 eV/D + ion beam with a flux of 10 17-10 18 D/m 2s. Gas driven permeation (GDP) from the deuterium background gas was observed as well. Calculations using both the analytical formula for the diffusion limited regime (DLR) and the TMAP 7 code gave good agreement with the experimental data. Defects with a detrapping energy of (2.05 ± 0.15) eV were found to limit the permeation lag time in our experimental conditions.

Ion-driven deuterium permeation through tungsten at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Gasparyan, Yu.M., E-mail: yury.gasparyan@ipp.mpg.d [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmanstrasse 2, D-85748 Garching (Germany); Moscow Engineering and Physics Institute, Kashirskoe sh. 31, Moscow 115409 (Russian Federation); Golubeva, A.V. [RRC ' Kurchatov Institute' , Ac. Kurchatov sq., 1/1, Moscow RU-123182 (Russian Federation); Mayer, M. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmanstrasse 2, D-85748 Garching (Germany); Pisarev, A.A. [Moscow Engineering and Physics Institute, Kashirskoe sh. 31, Moscow 115409 (Russian Federation); Roth, J. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmanstrasse 2, D-85748 Garching (Germany)

2009-06-15

The ion-driven permeation (IDP) through 50 mum thick pure tungsten foils was measured in the temperature range of 823-923 K during irradiation by 200 eV/D{sup +} ion beam with a flux of 10{sup 17}-10{sup 18} D/m{sup 2}s. Gas driven permeation (GDP) from the deuterium background gas was observed as well. Calculations using both the analytical formula for the diffusion limited regime (DLR) and the TMAP 7 code gave good agreement with the experimental data. Defects with a detrapping energy of (2.05 +- 0.15) eV were found to limit the permeation lag time in our experimental conditions.

Ion-driven deuterium permeation through tungsten at high temperatures

International Nuclear Information System (INIS)

Gasparyan, Yu.M.; Golubeva, A.V.; Mayer, M.; Pisarev, A.A.; Roth, J.

2009-01-01

The ion-driven permeation (IDP) through 50 μm thick pure tungsten foils was measured in the temperature range of 823-923 K during irradiation by 200 eV/D + ion beam with a flux of 10 17 -10 18 D/m 2 s. Gas driven permeation (GDP) from the deuterium background gas was observed as well. Calculations using both the analytical formula for the diffusion limited regime (DLR) and the TMAP 7 code gave good agreement with the experimental data. Defects with a detrapping energy of (2.05 ± 0.15) eV were found to limit the permeation lag time in our experimental conditions.

Ternary chalcopyrite semiconductors

CERN Document Server

Shay, J L; Pamplin, B R

2013-01-01

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Iterative solution of the semiconductor device equations

Energy Technology Data Exchange (ETDEWEB)

Bova, S.W.; Carey, G.F. [Univ. of Texas, Austin, TX (United States)

1996-12-31

Most semiconductor device models can be described by a nonlinear Poisson equation for the electrostatic potential coupled to a system of convection-reaction-diffusion equations for the transport of charge and energy. These equations are typically solved in a decoupled fashion and e.g. Newton`s method is used to obtain the resulting sequences of linear systems. The Poisson problem leads to a symmetric, positive definite system which we solve iteratively using conjugate gradient. The transport equations lead to nonsymmetric, indefinite systems, thereby complicating the selection of an appropriate iterative method. Moreover, their solutions exhibit steep layers and are subject to numerical oscillations and instabilities if standard Galerkin-type discretization strategies are used. In the present study, we use an upwind finite element technique for the transport equations. We also evaluate the performance of different iterative methods for the transport equations and investigate various preconditioners for a few generalized gradient methods. Numerical examples are given for a representative two-dimensional depletion MOSFET.

Analysis and calibration of transient enhanced diffusion for an indium impurity in a nanoscale semiconductor device

International Nuclear Information System (INIS)

Lee, Jun-Ha; Lee, Hoong-Joo

2005-01-01

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO 2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-μm device characteristics, such as V th and I dsat , for which the differences between simulation and experiment less than 5 %.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

Science.gov (United States)

Roy, Pinku; Maiti, Tanmoy

2018-02-01

Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Coherent dynamics in semiconductors

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

1998-01-01

enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

Diffuse Surface Scattering in the Plasmonic Resonances of Ultralow Electron Density Nanospheres.

Science.gov (United States)

Monreal, R Carmina; Antosiewicz, Tomasz J; Apell, S Peter

2015-05-21

Localized surface plasmon resonances (LSPRs) have recently been identified in extremely diluted electron systems obtained by doping semiconductor quantum dots. Here, we investigate the role that different surface effects, namely, electronic spill-out and diffuse surface scattering, play in the optical properties of these ultralow electron density nanosystems. Diffuse scattering originates from imperfections or roughness at a microscopic scale on the surface. Using an electromagnetic theory that describes this mechanism in conjunction with a dielectric function including the quantum size effect, we find that the LSPRs show an oscillatory behavior in both position and width for large particles and a strong blue shift in energy and an increased width for smaller radii, consistent with recent experimental results for photodoped ZnO nanocrystals. We thus show that the commonly ignored process of diffuse surface scattering is a more important mechanism affecting the plasmonic properties of ultralow electron density nanoparticles than the spill-out effect.

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Life-cycle assessment of semiconductors

CERN Document Server

Boyd, Sarah B

2012-01-01

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

Energy Technology Data Exchange (ETDEWEB)

Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

2003-06-23

This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

Reflection technique for thermal mapping of semiconductors

Science.gov (United States)

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Porous and Nanoporous Semiconductors and Emerging Applications

Directory of Open Access Journals (Sweden)

Helmut Föll

2006-01-01

Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

Emission and Absorption Entropy Generation in Semiconductors

DEFF Research Database (Denmark)

Reck, Kasper; Varpula, Aapo; Prunnila, Mika

2013-01-01

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

Theory of resistivity-gradient-driven turbulence

International Nuclear Information System (INIS)

Garcia, L.; Carreras, B.A.; Diamond, P.H.; Callen, J.D.

1984-10-01

A theory of the nonlinear evolution and saturation of resistivity-driven turbulence, which evolves from linear rippling instabilities, is presented. The nonlinear saturation mechanism is identified both analytically and numerically. Saturation occurs when the turbulent diffusion of the resistivity is large enough so that dissipation due to parallel electron thermal conduction balances the nonlinearly modified resistivity gradient driving term. The levels of potential, resistivity, and density fluctuations at saturation are calculated. A combination of computational modeling and analytic treatment is used in this investigation

Characterization of defects in semiconductors using radioactive isotopes

CERN Document Server

Deicher, Manfred

2007-01-01

Radioactive atoms have been used in solid-state physics and in material science for many decades. Besides their classical application as tracer for diffusion studies, nuclear techniques such as Mossbauer spectroscopy, perturbed angular correlation, and emission channeling have used nuclear properties to gain microscopical information on the structural and dynamical properties of solids. The availability of many different radioactive isotopes as a clean ion beam at facilities like ISOLDE/CERN has triggered a new era involving methods sensitive for the optical and electronic properties of solids, especially in the field of semiconductor physics. Spectroscopic techniques like photoluminescence (PL), deep-level transient spectroscopy (DLTS), and Hall effect gain a new quality by using radioactive isotopes. Due to their decay the chemical origin of an observed electronic and optical behavior of a specific defect or dopant can be unambiguously identified. This contribution will highlight a few examples to illustrat...

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Semiconductor Nanocrystals for Biological Imaging

Energy Technology Data Exchange (ETDEWEB)

Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

2005-06-28

Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

Progress in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Walton, J.; Gatti, E.

1985-01-01

Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

Logarithmic Superdiffusion in Two Dimensional Driven Lattice Gases

Science.gov (United States)

Krug, J.; Neiss, R. A.; Schadschneider, A.; Schmidt, J.

2018-03-01

The spreading of density fluctuations in two-dimensional driven diffusive systems is marginally anomalous. Mode coupling theory predicts that the diffusivity in the direction of the drive diverges with time as (ln t)^{2/3} with a prefactor depending on the macroscopic current-density relation and the diffusion tensor of the fluctuating hydrodynamic field equation. Here we present the first numerical verification of this behavior for a particular version of the two-dimensional asymmetric exclusion process. Particles jump strictly asymmetrically along one of the lattice directions and symmetrically along the other, and an anisotropy parameter p governs the ratio between the two rates. Using a novel massively parallel coupling algorithm that strongly reduces the fluctuations in the numerical estimate of the two-point correlation function, we are able to accurately determine the exponent of the logarithmic correction. In addition, the variation of the prefactor with p provides a stringent test of mode coupling theory.

Dynamical Fano-Like Interference between Rabi Oscillations and Coherent Phonons in a Semiconductor Microcavity System.

Science.gov (United States)

Yoshino, S; Oohata, G; Mizoguchi, K

2015-10-09

We report on dynamical interference between short-lived Rabi oscillations and long-lived coherent phonons in CuCl semiconductor microcavities resulting from the coupling between the two oscillations. The Fourier-transformed spectra of the time-domain signals obtained from semiconductor microcavities by using a pump-probe technique show that the intensity of the coherent longitudinal optical phonon of CuCl is enhanced by increasing that of the Rabi oscillation, which indicates that the coherent phonon is driven by the Rabi oscillation through the Fröhlich interaction. Moreover, as the Rabi oscillation frequency decreases upon crossing the phonon frequency, the spectral profile of the coherent phonon changes from a peak to a dip with an asymmetric structure. The continuous wavelet transformation reveals that these peak and dip structures originate from constructive and destructive interference between Rabi oscillations and coherent phonons, respectively. We demonstrate that the asymmetric spectral structures in relation to the frequency detuning are well reproduced by using a classical coupled oscillator model on the basis of dynamical Fano-like interference.

Theory of neoclassical resistivity-gradient-driven turbulence

International Nuclear Information System (INIS)

Kwon, O.J.; Diamond, P.H.; Hahm, T.S.

1988-12-01

It is shown that rippling instabilities can tap the density gradient expansion free energy source through the density dependence of the neoclassical resistivity. Linear analyses show that the region where neoclassical rippling modes are significantly excited extends from the edge of the plasma to the region where ν/sub *e/ ≤ 1. Since these modes are non-dispersive, diamagnetic effects are negligible in comparison to the nonlinear decorrelation rate at saturation. Thus, the relevant regime is the 'strong turbulence' regime. The turbulent radial diffusivities of the temperature and the density are obtained as eigenvalues of the renormalized eigenmode equations at steady state. The density gradient acts to enhance the level of turbulence, compared to that driven by the temperature gradient alone. The saturated turbulent state is characterized by: current decoupling, the breakdown of Boltzmann relation, a radial mode scale of density fluctuations exceeding that of temperature fluctuations, implying that density diffusivity exceeds temperature diffusivity, and that density fluctuation levels exceed temperature fluctuation levels. Magnetic fluctuation levels are negligible. 29 refs., 1 fig

Semiconductor sensors

International Nuclear Information System (INIS)

Hartmann, Frank

2011-01-01

Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

Steady state solution of the Fokker-Planck equation combined with unidirectional quasilinear diffusion under detailed balance conditions

International Nuclear Information System (INIS)

Hizanidis, K.

1984-04-01

The relativistic collisional Fokker-Planck equation combined with an externally imposed unidirectional quasilinear (rf) diffusion is solved for arbitrary values of rf diffusion coefficient under conditions of detailed balance of the staionary joint distribution involved. The detailed balance condition imposes a restriction on the functional form of the quasilinear diffusion coefficient which might be associated with the existence of a saturated spectrum of fluctuation in a quasilinearly rf-driven plasma

Terahertz Nonlinear Optics in Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

2013-01-01

We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

Review of solar PV policies, interventions and diffusion in East Africa

DEFF Research Database (Denmark)

Hansen, Ulrich Elmer; Pedersen, Mathilde Brix; Nygaard, Ivan

2015-01-01

from donor and government-based support to market-driven diffusion of solar PV; and (ii) a transition from small-scale, off-grid systems towards mini-grids and large-scale, grid-connected solar power plants. The paper points out three generic factors that have contributed to encouraging SHS diffusion......Previous research on the diffusion of solar PV in Africa has mainly focused on solar home systems (SHS) in individual countries and thus overlooked developments in other PV market segments that have recently emerged. In contrast this paper adopts a regional perspective by reviewing developments...... in supportive policies, donor programs and diffusion status in all PV market segments in Kenya, Tanzania and Uganda, as well as identifying the key factors put forward in the literature to explain differences in the diffusion of SHS in these three countries. The paper finds two emerging trends: (i) a movement...

Rethinking pattern formation in reaction-diffusion systems

Science.gov (United States)

Halatek, J.; Frey, E.

2018-05-01

The present theoretical framework for the analysis of pattern formation in complex systems is mostly limited to the vicinity of fixed (global) equilibria. Here we present a new theoretical approach to characterize dynamical states arbitrarily far from (global) equilibrium. We show that reaction-diffusion systems that are driven by locally mass-conserving interactions can be understood in terms of local equilibria of diffusively coupled compartments. Diffusive coupling generically induces lateral redistribution of the globally conserved quantities, and the variable local amounts of these quantities determine the local equilibria in each compartment. We find that, even far from global equilibrium, the system is well characterized by its moving local equilibria. We apply this framework to in vitro Min protein pattern formation, a paradigmatic model for biological pattern formation. Within our framework we can predict and explain transitions between chemical turbulence and order arbitrarily far from global equilibrium. Our results reveal conceptually new principles of self-organized pattern formation that may well govern diverse dynamical systems.

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

Diffusion length of minority carriers in scanning electron beam annealed silicon

International Nuclear Information System (INIS)

Smith, H.J.; Cilliers, R.; Bontemps, A.

1982-01-01

Ion implantation has advantages for solar cell production, but necessitates an annealing step. Various new transitory annealing methods have appeared recently. A particularly attractive method is multi-scan electron beam annealing of thermally isolated wafers. Energy is applied homogeneously over the whole target surface and the temperature rises throughout the thickness. Backscattering analysis shows good recrystallization in seconds. However the effect of this total heating on the diffusion length (Lsub(D)) must be investigated particularly in view of the degradation of Lsub(D) due to high temperature oven annealing. The semiconductor-electrolyte diode method was set up to measure the current generated in the cell due to the creation and diffusion of carriers in the silicon under photon irradiation. Comparison with a theoretical model yields Lsub(D). It appears that 3mA.cm - 2 of 15keV electrons recrystallizes damage in 2.5 seconds and does not decrease Lsub(D) in the bulk. In 4 seconds the Lsub(D) decreases and dopant diffusion occurs. On technical grounds this method can thus be applied for solar cell production. (Auth.)

Cultural Diffusion Was the Main Driving Mechanism of the Neolithic Transition in Southern Africa

Science.gov (United States)

Jerardino, Antonieta; Fort, Joaquim; Isern, Neus; Rondelli, Bernardo

2014-01-01

It is well known that the Neolithic transition spread across Europe at a speed of about 1 km/yr. This result has been previously interpreted as a range expansion of the Neolithic driven mainly by demic diffusion (whereas cultural diffusion played a secondary role). However, a long-standing problem is whether this value (1 km/yr) and its interpretation (mainly demic diffusion) are characteristic only of Europe or universal (i.e. intrinsic features of Neolithic transitions all over the world). So far Neolithic spread rates outside Europe have been barely measured, and Neolithic spread rates substantially faster than 1 km/yr have not been previously reported. Here we show that the transition from hunting and gathering into herding in southern Africa spread at a rate of about 2.4 km/yr, i.e. about twice faster than the European Neolithic transition. Thus the value 1 km/yr is not a universal feature of Neolithic transitions in the world. Resorting to a recent demic-cultural wave-of-advance model, we also find that the main mechanism at work in the southern African Neolithic spread was cultural diffusion (whereas demic diffusion played a secondary role). This is in sharp contrast to the European Neolithic. Our results further suggest that Neolithic spread rates could be mainly driven by cultural diffusion in cases where the final state of this transition is herding/pastoralism (such as in southern Africa) rather than farming and stockbreeding (as in Europe). PMID:25517968

Two Dimensional Drug Diffusion Between Nanoparticles and Fractal Tumors

Science.gov (United States)

Samioti, S. E.; Karamanos, K.; Tsiantis, A.; Papathanasiou, A.; Sarris, I.

2017-11-01

Drug delivery methods based on nanoparticles are some of the most promising medical applications in nanotechnology to treat cancer. It is observed that drug released by nanoparticles to the cancer tumors may be driven by diffusion. A fractal tumor boundary of triangular Von Koch shape is considered here and the diffusion mechanism is studied for different drug concentrations and increased fractality. A high order Finite Elements method based on the Fenics library is incorporated in fine meshes to fully resolve these irregular boundaries. Drug concentration, its transfer rates and entropy production are calculated in an up to forth order fractal iteration boundaries. We observed that diffusion rate diminishes for successive prefractal generations. Also, the entropy production around the system changes greatly as the order of the fractal curve increases. Results indicate with precision where the active sites are, in which most of the diffusion takes place and thus drug arrives to the tumor.

Dimensional reduction of a general advection–diffusion equation in 2D channels

Science.gov (United States)

Kalinay, Pavol; Slanina, František

2018-06-01

Diffusion of point-like particles in a two-dimensional channel of varying width is studied. The particles are driven by an arbitrary space dependent force. We construct a general recurrence procedure mapping the corresponding two-dimensional advection-diffusion equation onto the longitudinal coordinate x. Unlike the previous specific cases, the presented procedure enables us to find the one-dimensional description of the confined diffusion even for non-conservative (vortex) forces, e.g. caused by flowing solvent dragging the particles. We show that the result is again the generalized Fick–Jacobs equation. Despite of non existing scalar potential in the case of vortex forces, the effective one-dimensional scalar potential, as well as the corresponding quasi-equilibrium and the effective diffusion coefficient can be always found.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Market survey of semiconductors

International Nuclear Information System (INIS)

Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

1977-06-01

Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

Introductory semiconductor device physics

CERN Document Server

Parker, Greg

2004-01-01

ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Probing the type of anomalous diffusion with single-particle tracking.

Science.gov (United States)

Ernst, Dominique; Köhler, Jürgen; Weiss, Matthias

2014-05-07

Many reactions in complex fluids, e.g. signaling cascades in the cytoplasm of living cells, are governed by a diffusion-driven encounter of reactants. Yet, diffusion in complex fluids often exhibits an anomalous characteristic ('subdiffusion'). Since different types of subdiffusion have distinct effects on timing and equilibria of chemical reactions, a thorough determination of the reactants' type of random walk is key to a quantitative understanding of reactions in complex fluids. Here we introduce a straightforward and simple approach for determining the type of subdiffusion from single-particle tracking data. Unlike previous approaches, our method also is sensitive to transient subdiffusion phenomena, e.g. obstructed diffusion below the percolation threshold. We validate our strategy with data from experiment and simulation.

The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

Science.gov (United States)

Cvikl, B.

2010-01-01

The closed solution for the internal electric field and the total charge density derived in the drift-diffusion approximation for the model of a single layer organic semiconductor structure characterized by the bulk shallow single trap-charge energy level is presented. The solutions for two examples of electric field boundary conditions are tested on room temperature current density-voltage data of the electron conducting aluminum/tris(8-hydroxyquinoline aluminum/calcium structure [W. Brütting et al., Synth. Met. 122, 99 (2001)] for which jexp∝Va3.4, within the interval of bias 0.4 V≤Va≤7. In each case investigated the apparent electron mobility determined at given bias is distributed within a given, finite interval of values. The bias dependence of the logarithm of their lower limit, i.e., their minimum values, is found to be in each case, to a good approximation, proportional to the square root of the applied electric field. On account of the bias dependence as incorporated in the minimum value of the apparent electron mobility the spatial distribution of the organic bulk electric field as well as the total charge density turn out to be bias independent. The first case investigated is based on the boundary condition of zero electric field at the electron injection interface. It is shown that for minimum valued apparent mobilities, the strong but finite accumulation of electrons close to the anode is obtained, which characterize the inverted space charge limited current (SCLC) effect. The second example refers to the internal electric field allowing for self-adjustment of its boundary values. The total electron charge density is than found typically to be of U shape, which may, depending on the parameters, peak at both or at either Alq3 boundary. It is this example in which the proper SCLC effect is consequently predicted. In each of the above two cases, the calculations predict the minimum values of the electron apparent mobility, which substantially

Dispersion-induced nonlinearities in semiconductors

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, A.

2002-01-01

A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

Diffusion relaxation times of nonequilibrium isolated small bodies and their solid phase ensembles to equilibrium states

Science.gov (United States)

Tovbin, Yu. K.

2017-08-01

The possibility of obtaining analytical estimates in a diffusion approximation of the times needed by nonequilibrium small bodies to relax to their equilibrium states based on knowledge of the mass transfer coefficient is considered. This coefficient is expressed as the product of the self-diffusion coefficient and the thermodynamic factor. A set of equations for the diffusion transport of mixture components is formulated, characteristic scales of the size of microheterogeneous phases are identified, and effective mass transfer coefficients are constructed for them. Allowing for the developed interface of coexisting and immiscible phases along with the porosity of solid phases is discussed. This approach can be applied to the diffusion equalization of concentrations of solid mixture components in many physicochemical systems: the mutual diffusion of components in multicomponent systems (alloys, semiconductors, solid mixtures of inert gases) and the mass transfer of an absorbed mobile component in the voids of a matrix consisting of slow components or a mixed composition of mobile and slow components (e.g., hydrogen in metals, oxygen in oxides, and the transfer of molecules through membranes of different natures, including polymeric).

Determination of hydrogen diffusivity and permeability in W near room temperature applying a tritium tracer technique

International Nuclear Information System (INIS)

Ikeda, T.; Otsuka, T.; Tanabe, T.

2011-01-01

Tungsten is a primary candidate of plasma facing material in ITER and beyond, owing to its good thermal property and low erosion. But hydrogen solubility and diffusivity near ITER operation temperatures (below 500 K) have scarcely studied. Mainly because its low hydrogen solubility and diffusivity at lower temperatures make the detection of hydrogen quite difficult. We have tried to observe hydrogen plasma driven permeation (PDP) through nickel and tungsten near room temperatures applying a tritium tracer technique, which is extremely sensible to detect tritium diluted in hydrogen. The apparent diffusion coefficients for PDP were determined by permeation lag times at first time, and those for nickel and tungsten were similar or a few times larger than those for gas driven permeation (GDP). The permeation rates for PDP in nickel and tungsten were larger than those for GDP normalized to the same gas pressure about 20 and 5 times larger, respectively.

Molecular semiconductors photoelectrical properties and solar cells

CERN Document Server

Rees, Ch

1985-01-01

During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

International Nuclear Information System (INIS)

Jyegal, Jang

2015-01-01

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices

Impurity sublattice localization in ZnO revealed by li marker diffusion

DEFF Research Database (Denmark)

Azarov, A.Yu.; Knutsen, K.E.; Neuvonen, P.T.

2013-01-01

Sublattice localization of impurities in compound semiconductors, e.g., ZnO, determines their electronic and optical action. Despite that the impurity position may be envisaged based on charge considerations, the actual localization is often unknown, limiting our understanding of the incorporation...... and possible doping mechanisms. In this study, we demonstrate that the preferential sublattice occupation for a number of impurities in ZnO can be revealed by monitoring Li diffusion. In particular, using ion implantation, the impurity incorporation into the Zn sublattice (holds for, B, Mg, P, Ag, Cd, and Sb...

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.