WorldWideScience

Sample records for dielectric interfaces studied

  1. Ionic Structure at Dielectric Interfaces

    Science.gov (United States)

    Jing, Yufei

    The behavior of ions in liquids confined between macromolecules determines the outcome of many nanoscale assembly processes in synthetic and biological materials such as colloidal dispersions, emulsions, hydrogels, DNA, cell membranes, and proteins. Theoretically, the macromolecule-liquid boundary is often modeled as a dielectric interface and an important quantity of interest is the ionic structure in a liquid confined between two such interfaces. The knowledge gleaned from the study of ionic structure in such models can be useful in several industrial applications, such as biosensors, lithium-ion batteries double-layer supercapacitors for energy storage and seawater desalination. Electrostatics plays a critical role in the development of such functional materials. Many of the functions of these materials, result from charge and composition heterogeneities. There are great challenges in solving electrostatics problems in heterogeneous media with arbitrary shapes because electrostatic interactions remains unknown but depend on the particular density of charge distributions. Charged molecules in heterogeneous media affect the media's dielectric response and hence the interaction between the charges is unknown since it depends on the media and on the geometrical properties of the interfaces. To determine the properties of heterogeneous systems including crucial effects neglected in classical mean field models such as the hard core of the ions, the dielectric mismatch and interfaces with arbitrary shapes. The effect of hard core interactions accounts properly for short range interactions and the effect of local dielectric heterogeneities in the presence of ions and/or charged molecules for long-range interactions are both analyzed via an energy variational principle that enables to update charges and the medium's response in the same simulation time step. In particular, we compute the ionic structure in a model system of electrolyte confined by two planar dielectric

  2. Semiconductor/dielectric interface engineering and characterization

    Science.gov (United States)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  3. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  4. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  5. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  6. Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications

    Science.gov (United States)

    Schroeder, T.; Lupina, G.; Sohal, R.; Lippert, G.; Wenger, Ch.; Seifarth, O.; Tallarida, M.; Schmeisser, D.

    2007-07-01

    Engineered dielectrics combined with compatible metal electrodes are important materials science approaches to scale three-dimensional trench dynamic random access memory (DRAM) cells. Highly insulating dielectrics with high dielectric constants were engineered in this study on TiN metal electrodes by partly substituting Al in the wide band gap insulator Al2O3 by Pr cations. High quality PrAlO3 metal-insulator-metal capacitors were processed with a dielectric constant of 19, three times higher than in the case of Al2O3 reference cells. As a parasitic low dielectric constant interface layer between PrAlO3 and TiN limits the total performance gain, a systematic nondestructive synchrotron x-ray photoelectron spectroscopy study on the interface chemistry of PrxAl2-xO3 (x =0-2) dielectrics on TiN layers was applied to unveil its chemical origin. The interface layer results from the decreasing chemical reactivity of PrxAl2-xO3 dielectrics with increasing Pr content x to reduce native Ti oxide compounds present on unprotected TiN films. Accordingly, PrAlO3 based DRAM capacitors require strict control of the surface chemistry of the TiN electrode, a parameter furthermore of importance to engineer the band offsets of PrxAl2-xO3/TiN heterojunctions.

  7. Center for dielectric studies

    Science.gov (United States)

    Cross, L. E.; Newnham, R. E.; Biggers, J. V.

    1984-05-01

    This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

  8. Oblique surface waves at an interface between a metal-dielectric superlattice and an isotropic dielectric

    International Nuclear Information System (INIS)

    Vuković, Slobodan M; Miret, Juan J; Zapata-Rodriguez, Carlos J; Jakšić, Zoran

    2012-01-01

    We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal-dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal-dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thickness of the layers and the dielectric permittivities of the constituent materials are met. We show that losses within the metallic layers can be substantially reduced by making the layers sufficiently thin. At the same time, a dramatic enlargement of the range of angles for oblique propagation of the new surface modes is observed. This can lead, however, to field non-locality and consequently to failure of the EM approximation.

  9. Haptic interfaces using dielectric electroactive polymers

    Science.gov (United States)

    Ozsecen, Muzaffer Y.; Sivak, Mark; Mavroidis, Constantinos

    2010-04-01

    Quality, amplitude and frequency of the interaction forces between a human and an actuator are essential traits for haptic applications. A variety of Electro-Active Polymer (EAP) based actuators can provide these characteristics simultaneously with quiet operation, low weight, high power density and fast response. This paper demonstrates a rolled Dielectric Elastomer Actuator (DEA) being used as a telepresence device in a heart beat measurement application. In the this testing, heart signals were acquired from a remote location using a wireless heart rate sensor, sent through a network and DEA was used to haptically reproduce the heart beats at the medical expert's location. A series of preliminary human subject tests were conducted that demonstrated that a) DE based haptic feeling can be used in heart beat measurement tests and b) through subjective testing the stiffness and actuator properties of the EAP can be tuned for a variety of applications.

  10. Floating dielectric slab optical interconnection between metal-dielectric interface surface plasmon polariton waveguides.

    Science.gov (United States)

    Kang, Minsu; Park, Junghyun; Lee, Il-Min; Lee, Byoungho

    2009-01-19

    A simple and effective optical interconnection which connects two distanced single metal-dielectric interface surface plasmon waveguides by a floating dielectric slab waveguide (slab bridge) is proposed. Transmission characteristics of the suggested structure are numerically studied using rigorous coupled wave analysis, and design rules based on the study are given. In the wave-guiding part, if the slab bridge can support more than the fundamental mode, then the transmission efficiency of the interconnection shows strong periodic dependency on the length of the bridge, due to the multi-mode interference (MMI) effect. Otherwise, only small fluctuation occurs due to the Fabry-Pérot effect. In addition, light beating happens when the slab bridge is relatively short. In the wave-coupling part, on the other hand, gap-assisted transmission occurs at each overlapping region as a consequence of mode hybridization. Periodic dependency on the length of the overlap region also appears due to the MMI effect. According to these results, we propose design principles for achieving both high transmission efficiency and stability with respect to the variation of the interconnection distance, and we show how to obtain the transmission efficiency of 68.3% for the 1mm-long interconnection.

  11. Refraction at a curved dielectric interface - Geometrical optics solution

    Science.gov (United States)

    Lee, S.-W.; Sheshadri, M. S.; Mittra, R.; Jamnejad, V.

    1982-01-01

    The transmission of a spherical or plane wave through an arbitrarily curved dielectric interface is solved by the geometrical optics theory. The transmitted field is proportional to the product of the conventional Fresnel's transmission coefficient and a divergence factor (DF), which describes the cross-sectional variation (convergence or divergence) of a ray pencil as the latter propagates in the transmitted region. The factor DF depends on the incident wavefront, the curvatures of the interface, and the relative indices of the two media. Explicit matrix formulas for calculating DF are given, and its physical significance is illustrated via examples.

  12. Local Electronic And Dielectric Properties at Nanosized Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Bonnell, Dawn A. [Univ. of Pennsylvania, Philadelphia, PA (United States)

    2015-02-23

    Final Report to the Department of Energy for period 6/1/2000 to 11/30/2014 for Grant # DE-FG02-00ER45813-A000 to the University of Pennsylvania Local Electronic And Dielectric Properties at Nanosized Interfaces PI: Dawn Bonnell The behavior of grain boundaries and interfaces has been a focus of fundamental research for decades because variations of structure and composition at interfaces dictate mechanical, electrical, optical and dielectric properties in solids. Similarly, the consequence of atomic and electronic structures of surfaces to chemical and physical interactions are critical due to their implications to catalysis and device fabrication. Increasing fundamental understanding of surfaces and interfaces has materially advanced technologies that directly bear on energy considerations. Currently, exciting developments in materials processing are enabling creative new electrical, optical and chemical device configurations. Controlled synthesis of nanoparticles, semiconducting nanowires and nanorods, optical quantum dots, etc. along with a range of strategies for assembling and patterning nanostructures portend the viability of new devices that have the potential to significantly impact the energy landscape. As devices become smaller the impact of interfaces and surfaces grows geometrically. As with other nanoscale phenomena, small interfaces do not exhibit the same properties as do large interfaces. The size dependence of interface properties had not been explored and understanding at the most fundamental level is necessary to the advancement of nanostructured devices. An equally important factor in the behavior of interfaces in devices is the ability to examine the interfaces under realistic conditions. For example, interfaces and boundaries dictate the behavior of oxide fuel cells which operate at extremely high temperatures in dynamic high pressure chemical environments. These conditions preclude the characterization of local properties during fuel cell

  13. Effect of Dielectric Interface on the Performance of MoS2 Transistors.

    Science.gov (United States)

    Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

    2017-12-27

    Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

  14. Metal-dielectric interfaces in gigascale electronics thermal and electrical stability

    CERN Document Server

    He, Ming

    2012-01-01

    Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric i...

  15. Bulk and interface dielectric functions: New results within the tight-binding approximation

    International Nuclear Information System (INIS)

    Elvira, V.D.; Duran, J.C.

    1991-01-01

    A tight-binding approach is used to analyze the dielectric behaviour of bulk semiconductors and semiconductor interfaces. This time interactions between second nearest neighbours are taken into account and several electrostatic models are proposed for the induced charge density around the atoms. The bulk dielectric function of different semiconductors (Si, Ge, GaAs and AlAs) are obtained and compared with other theoretical and experimental results. Finally, the energy band offset for GaAs-AlAs(1,0,0) interface is obtained and related to bulk properties of both semiconductors. The results presented in this paper show how the use of very simple but more realistic electrostatic models improve the analysis of the screening properties in semiconductors, giving a new support to the consistent tight-binding method for studying characteristics related to those properties. (Author)

  16. Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

    Science.gov (United States)

    Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

    2017-10-01

    The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

  17. Dielectric Property Enhancement in Polymer Composites with Engineered Interfaces

    Science.gov (United States)

    Krentz, Timothy Michael

    This thesis reports studies into the dielectric behavior of polymer composites filled with silica nanoparticles. The permittivity and dielectric breakdown strength (DBS) of these materials are critical to their performance in insulating applications such as high voltage power transmission. Until now, the mechanisms which lead to improvements in DBS in these systems have been poorly understood, in part because the effects of dispersion of the filler and the filler's surface electronic characteristics have been confused. The new surface modifications created in this thesis permit these two parameters to be addressed independently, leading to the hypothesis that nanocomposite dielectric materials exhibit DBS enhancement when electron avalanches are prevented from proceeding to reach a critical size capable of causing failure. The same control of dispersion and surface properties also lead to changes in the permittivity of the composite based upon the polarizability and trapping behavior of the filler. In this work, the dispersion and surface states of silica nanoparticles were independently controlled with two separate populations of surface molecules. Two matrix materials were studied, and in each system, a different, matrix-compatible long chain polymer is required to control dispersion. Conversely, a second population of short molecules is shown to be capable of creating electronic traps associated with the silica nanoparticle surface which lead to DBS enhancements largely independent of the matrix, indicating that the same failure mechanism is operating in both epoxy and polypropylene. Progressive variation in dispersion quality is attained with this surface modification scheme. This creates progressively smaller volumes of matrix polymer unaffected by the filler. This work shows that when these volumes approach and become smaller than the same scale as predicted for electron avalanches, the greatest changes in DBS are seen. Likewise, the plateau behavior of this

  18. Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

    Science.gov (United States)

    Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

    2018-05-01

    The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

  19. Improved polymer nanocomposite dielectric breakdown performance through barium titanate to epoxy interface control

    Energy Technology Data Exchange (ETDEWEB)

    Siddabattuni, Sasidhar [Missouri University of Science and Technology (formerly the University of Missouri-Rolla), Chemistry Department, 400W. 11th Street, Rolla, MO 65409 (United States); Schuman, Thomas P., E-mail: tschuman@mst.edu [Missouri University of Science and Technology (formerly the University of Missouri-Rolla), Chemistry Department, 400W. 11th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Missouri University of Science and Technology, Materials Science and Engineering Department, 1400N. Bishop Avenue, Rolla, MO 65409 (United States)

    2011-11-15

    Highlights: > A covalent filler-matrix interface improves the dielectric properties of a polymer-particle nanocomposite dielectric. > A covalent interface reduced the polymer free volume around the nanoparticles as assessed through T{sub g} measurements. > Composite T{sub g} was raised and breakdown strength improved for nanocomposites with a covalent polymer-particle interface. > A larger Maxwell-Wagner (MW) relaxation correlated with reduced breakdown strengths and energy storage densities. > The MW relaxation could be considered a dielectric defect regarding breakdown strength and energy storage density. - Abstract: A composite approach to dielectric design has the potential to provide improved permittivity as well as high breakdown strength and thus afford greater electrical energy storage density. Interfacial coupling is an effective approach to improve the polymer-particle composite dielectric film resistance to charge flow and dielectric breakdown. A bi-functional interfacial coupling agent added to the inorganic oxide particles' surface assists dispersion into the thermosetting epoxy polymer matrix and upon composite cure reacts covalently with the polymer matrix. The composite then retains the glass transition temperature of pure polymer, provides a reduced Maxwell-Wagner relaxation of the polymer-particle composite, and attains a reduced sensitivity to dielectric breakdown compared to particle epoxy composites that lack interfacial coupling between the composite filler and polymer matrix. Besides an improved permittivity, the breakdown strength and thus energy density of a covalent interface nanoparticle barium titanate in epoxy composite dielectric film, at a 5 vol.% particle concentration, was significantly improved compared to a pure polymer dielectric film. The interfacially bonded, dielectric composite film had a permittivity {approx}6.3 and at a 30 {mu}m thickness achieved a calculated energy density of 4.6 J/cm{sup 3}.

  20. Improved polymer nanocomposite dielectric breakdown performance through barium titanate to epoxy interface control

    International Nuclear Information System (INIS)

    Siddabattuni, Sasidhar; Schuman, Thomas P.; Dogan, Fatih

    2011-01-01

    Highlights: → A covalent filler-matrix interface improves the dielectric properties of a polymer-particle nanocomposite dielectric. → A covalent interface reduced the polymer free volume around the nanoparticles as assessed through T g measurements. → Composite T g was raised and breakdown strength improved for nanocomposites with a covalent polymer-particle interface. → A larger Maxwell-Wagner (MW) relaxation correlated with reduced breakdown strengths and energy storage densities. → The MW relaxation could be considered a dielectric defect regarding breakdown strength and energy storage density. - Abstract: A composite approach to dielectric design has the potential to provide improved permittivity as well as high breakdown strength and thus afford greater electrical energy storage density. Interfacial coupling is an effective approach to improve the polymer-particle composite dielectric film resistance to charge flow and dielectric breakdown. A bi-functional interfacial coupling agent added to the inorganic oxide particles' surface assists dispersion into the thermosetting epoxy polymer matrix and upon composite cure reacts covalently with the polymer matrix. The composite then retains the glass transition temperature of pure polymer, provides a reduced Maxwell-Wagner relaxation of the polymer-particle composite, and attains a reduced sensitivity to dielectric breakdown compared to particle epoxy composites that lack interfacial coupling between the composite filler and polymer matrix. Besides an improved permittivity, the breakdown strength and thus energy density of a covalent interface nanoparticle barium titanate in epoxy composite dielectric film, at a 5 vol.% particle concentration, was significantly improved compared to a pure polymer dielectric film. The interfacially bonded, dielectric composite film had a permittivity ∼6.3 and at a 30 μm thickness achieved a calculated energy density of 4.6 J/cm 3 .

  1. Two-Dimensional Graphene-Gold Interfaces Serve as Robust Templates for Dielectric Capacitors.

    Science.gov (United States)

    Teshome, Tamiru; Datta, Ayan

    2017-10-04

    The electronic structures of novel heterostructures, namely, graphene-Au van der Waals (vdW) interfaces, have been studied using density functional theory. Dispersion-corrected PBE-D2 functionals are used to describe the phonon spectrum and binding energies. Ab initio molecular dynamics simulations reveal that the vdW framework is preserved till 1200 K. Beyond T = 1200 K, a transition of the quasiplanar Au into the three-dimensional cluster-like structure is observed. A dielectric capacitor is designed by placing 1-4 hexagonal boron nitride (h-BN) monolayers between graphene and Au conductive plates. Charge separation between the Au and graphene plates is carried out under the effect of an external field normal to the graphene-h-BN-Au interface. The gravimetric capacitances are computed as C 1 = 7.6 μF/g and C 2 = 3.2 μF/g for h-BN bilayers with the Au-graphene heterostructures. The capacitive behavior shows strong deviations from the classical charging models and exemplifies the importance of quantum phenomenon at short contacts, which eventually nullifies at large interelectrode distances. The graphene-Au interface is predicted to be an exciting vdW heterostructure with a potential application as a dielectric capacitor.

  2. Equilibrium and surface stability of liquid dielectric interface in electrical and gravitational fields

    Energy Technology Data Exchange (ETDEWEB)

    Ievlev, I I; Isers, A B

    1976-01-01

    An examination is made of the problem of locating the stable equilibrium surface shape of the interface between two liquid, uniform, isotropic, ideal dielectrics subject to the force of gravity, surface tension, and electrical forces. The conditions for the equilibrium and surface stability of the interface were obtained from the minimum free energy principle. These conditions are used for solving problems on locating the stable equilibrium interface boundary between two dielectrics positioned between infinite charged vertical plates, between infinite vertical coaxial cylinders, between infinite grounded plates and two horizontal charged thin cylinders placed between them. 8 references, 4 figures.

  3. arXiv Axion-photon conversion caused by dielectric interfaces: quantum field calculation

    CERN Document Server

    Ioannisian, Ara N.; Millar, Alexander J.; Raffelt, Georg G.

    2017-09-05

    Axion-photon conversion at dielectric interfaces, immersed in a near-homogeneous magnetic field, is the basis for the dielectric haloscope method to search for axion dark matter. In analogy to transition radiation, this process is possible because the photon wave function is modified by the dielectric layers ("Garibian wave function") and is no longer an eigenstate of momentum. A conventional first-order perturbative calculation of the transition probability between a quantized axion state and these distorted photon states provides the microwave production rate. It agrees with previous results based on solving the classical Maxwell equations for the combined system of axions and electromagnetic fields. We argue that in general the average photon production rate is given by our result, independently of the detailed quantum state of the axion field. Moreover, our result provides a new perspective on axion-photon conversion in dielectric haloscopes because the rate is based on an overlap integral between unpertu...

  4. imide, crystal structure, thermal and dielectric studies

    Indian Academy of Sciences (India)

    methyl imidazolium methylidene bis(trifluoromethanesulfonyl)imide, crystal structure, thermal and dielectric studies. BOUMEDIENE HADDAD1,2,3,∗, TAQIYEDDINE MOUMENE2, DIDIER VILLEMIN1,. JEAN-FRANÇOIS LOHIER1 and EL-HABIB ...

  5. Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

    Science.gov (United States)

    Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

    2003-12-31

    Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

  6. Characterization of a dielectric microdroplet thermal interface material with dispersed nanoparticles

    International Nuclear Information System (INIS)

    Hamdan, A.; Sahli, F.; Richards, R.; Richards, C.

    2012-01-01

    This work presents the fabrication and characterization of a dielectric microdroplet thermal interface material (TIM). Glycerin droplets, 1 μL, were tested as TIMs in this study. Copper nanoparticles having a diameter of 25 nm were dispersed in glycerin at different volume fractions to enhance its thermal conductivity. An increase of 57.5% in the thermal conductivity of glycerin was measured at a volume fraction of 15%. A minimum thermal interface resistance of 30.37 mm 2 K/W was measured for the glycerin microdroplets at a deformed droplet height of 10.2 μm. Good agreement between experimental measurements and the predictions of a model based on Maxwell’s equation of rules of mixtures was obtained. The effect of nanoparticles' size on the effective thermal conductivity of glycerin was studied. Nanoparticles with diameters of 60–80 and 300 nm were dispersed in glycerin at a volume fraction of 5%, and their results were compared to those of the 25 nm particles.

  7. Studies on metal-dielectric plasmonic structures.

    Energy Technology Data Exchange (ETDEWEB)

    Chettiar, Uday K. (Purdue University, West Lafayette, IN); Liu, Zhengtong (Purdue University, West Lafayette, IN); Thoreson, Mark D. (Purdue University, West Lafayette, IN); Shalaev, Vladimir M. (Purdue University, West Lafayette, IN); Drachev, Vladimir P. (Purdue University, West Lafayette, IN); Pack, Michael Vern; Kildishev, Alexander V. (Purdue University, West Lafayette, IN); Nyga, Piotr (Purdue University, West Lafayette, IN)

    2010-01-01

    The interaction of light with nanostructured metal leads to a number of fascinating phenomena, including plasmon oscillations that can be harnessed for a variety of cutting-edge applications. Plasmon oscillation modes are the collective oscillation of free electrons in metals under incident light. Previously, surface plasmon modes have been used for communication, sensing, nonlinear optics and novel physics studies. In this report, we describe the scientific research completed on metal-dielectric plasmonic films accomplished during a multi-year Purdue Excellence in Science and Engineering Graduate Fellowship sponsored by Sandia National Laboratories. A variety of plasmonic structures, from random 2D metal-dielectric films to 3D composite metal-dielectric films, have been studied in this research for applications such as surface-enhanced Raman sensing, tunable superlenses with resolutions beyond the diffraction limit, enhanced molecular absorption, infrared obscurants, and other real-world applications.

  8. Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

    Directory of Open Access Journals (Sweden)

    Jiabao Sun

    2015-01-01

    Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.

  9. Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

    Science.gov (United States)

    Carman, Robert; Ward, Barry; Kane, Deborah

    2011-10-01

    The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

  10. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  11. Axion-photon conversion caused by dielectric interfaces: quantum field calculation

    Energy Technology Data Exchange (ETDEWEB)

    Ioannisian, Ara N. [Yerevan Physics Institute, Alikhanian Br. 2, 375036 Yerevan (Armenia); Kazarian, Narine [Institute for Theoretical Physics and Modeling, 375036 Yerevan (Armenia); Millar, Alexander J.; Raffelt, Georg G., E-mail: ara.ioannisyan@cern.ch, E-mail: narinkaz@gmail.com, E-mail: millar@mpp.mpg.de, E-mail: raffelt@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany)

    2017-09-01

    Axion-photon conversion at dielectric interfaces, immersed in a near-homogeneous magnetic field, is the basis for the dielectric haloscope method to search for axion dark matter. In analogy to transition radiation, this process is possible because the photon wave function is modified by the dielectric layers ('Garibian wave function') and is no longer an eigenstate of momentum. A conventional first-order perturbative calculation of the transition probability between a quantized axion state and these distorted photon states provides the microwave production rate. It agrees with previous results based on solving the classical Maxwell equations for the combined system of axions and electromagnetic fields. We argue that in general the average photon production rate is given by our result, independently of the detailed quantum state of the axion field. Moreover, our result provides a new perspective on axion-photon conversion in dielectric haloscopes because the rate is based on an overlap integral between unperturbed axion and photon wave functions, in analogy to the usual treatment of microwave-cavity haloscopes.

  12. Modulation of the adsorption properties at air-water interfaces of complexes of egg white ovalbumin with pectin by the dielectric constant

    NARCIS (Netherlands)

    Kudryashova, E.V.; Jongh, H.H.J.de

    2008-01-01

    The possibility of modulating the mesoscopic properties of food colloidal systems by the dielectric constant is studied by determining the impact of small amounts of ethanol (10%) on the adsorption of egg white ovalbumin onto the air-water interface in the absence and presence of pectin. The

  13. Investigation of dielectric breakdown in silica-epoxy nanocomposites using designed interfaces.

    Science.gov (United States)

    Bell, Michael; Krentz, Timothy; Keith Nelson, J; Schadler, Linda; Wu, Ke; Breneman, Curt; Zhao, Su; Hillborg, Henrik; Benicewicz, Brian

    2017-06-01

    Adding nano-sized fillers to epoxy has proven to be an effective method for improving dielectric breakdown strength (DBS). Evidence suggests that dispersion state, as well as chemistry at the filler-matrix interface can play a crucial role in property enhancement. Herein we investigate the contribution of both filler dispersion and surface chemistry on the AC dielectric breakdown strength of silica-epoxy nanocomposites. Ligand engineering was used to synthesize bimodal ligands onto 15nm silica nanoparticles consisting of long epoxy compatible, poly(glycidyl methacrylate) (PGMA) chains, and short, π-conjugated, electroactive surface ligands. Surface initiated RAFT polymerization was used to synthesize multiple graft densities of PGMA chains, ultimately controlling the dispersion of the filler. Thiophene, anthracene, and terthiophene were employed as π-conjugated surface ligands that act as electron traps to mitigate avalanche breakdown. Investigation of the synthesized multifunctional nanoparticles was effective in defining the maximum particle spacing or free space length (L f ) that still leads to property enhancement, as well as giving insight into the effects of varying the electronic nature of the molecules at the interface on breakdown strength. Optimization of the investigated variables was shown to increase the AC dielectric breakdown strength of epoxy composites as much as 34% with only 2wt% silica loading. Copyright © 2017 Elsevier Inc. All rights reserved.

  14. SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

    Science.gov (United States)

    Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

    2017-05-01

    Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

  15. Interfacing Dielectric-Loaded Plasmonic and Silicon Photonic Waveguides: Theoretical Analysis and Experimental Demonstration

    DEFF Research Database (Denmark)

    Tsilipakos, O.; Pitilakis, A.; Yioultsis, T. V.

    2012-01-01

    A comprehensive theoretical analysis of end-fire coupling between dielectric-loaded surface plasmon polariton and rib/wire silicon-on-insulator (SOI) waveguides is presented. Simulations are based on the 3-D vector finite element method. The geometrical parameters of the interface are varied...... in order to identify the ones leading to optimum performance, i.e., maximum coupling efficiency. Fabrication tolerances about the optimum parameter values are also assessed. In addition, the effect of a longitudinal metallic stripe gap on coupling efficiency is quantified, since such gaps have been...

  16. Impedance and dielectric characterizations of ionic partitioning in interfaces that membranous, biomimetic and gold surfaces form with electrolytes

    International Nuclear Information System (INIS)

    Chilcott, Terry C.; Guo, Chuan

    2013-01-01

    Silicon dioxide, organic monolayers covalently attached to silicon and gold are used as biosensor substrates and anchoring platforms for hybrid, tethered and supported lipid membranes used in membrane-protein studies. Electrical impedance spectroscopy (EIS) studies of gold in contact with potassium chloride electrolytes of concentrations ranging from 1 mM to 300 mM, characterized the gold–electrolyte interface as principally a Stern layer 20–30 Å thick and conductivity many orders of magnitude less than that of the bulk electrolyte. EIS studies of SiO 2 –electrolyte system that were similar to studies of a tetradecane–electrolyte system are presented herein that reveal an interface comprised of at least two interfacial layers and extending some 10 5 Å into the electrolyte. The average conductivity and thickness values for the layer in contact with the SiO 2 surface (∼10 −6 S m −1 and ∼28 Å, respectively) were of the order of magnitude expected for the Gouy–Chapman layer but the dependency of the thickness on concentration did not reflect the expected dependency of the Debye length over the full range of concentrations. The average values for the next layer (∼10 −3 S m −1 and ∼10 5 Å) exhibited a dependency on concentration similar to that expected for the bulk electrolyte. The theoretical derivations of ionic partitioning arising from the Born (dielectric) energy distributions in both the SiO 2 and gold interfaces were generally consistent with the respective EIS studies and revealed that partitioning in the SiO 2 interface mimicked that in bio-membranous interfaces. The dielectric characterizations suggest that; ionic partitioning in biomimetic interfaces play a role in long-ranging sequestration of organic molecules, the extensiveness of these interfaces contributes to differences in the lipid densities of bilayers formed on biomimetic substrates, and chloride ions have a greater affinity than the smaller potassium ions for gold

  17. Selective enhancement of Selényi rings induced by the cross-correlation between the interfaces of a two-dimensional randomly rough dielectric film

    Science.gov (United States)

    Banon, J.-P.; Hetland, Ø. S.; Simonsen, I.

    2018-02-01

    By the use of both perturbative and non-perturbative solutions of the reduced Rayleigh equation, we present a detailed study of the scattering of light from two-dimensional weakly rough dielectric films. It is shown that for several rough film configurations, Selényi interference rings exist in the diffusely scattered light. For film systems supported by dielectric substrates where only one of the two interfaces of the film is weakly rough and the other planar, Selényi interference rings are observed at angular positions that can be determined from simple phase arguments. For such single-rough-interface films, we find and explain by a single scattering model that the contrast in the interference patterns is better when the top interface of the film (the interface facing the incident light) is rough than when the bottom interface is rough. When both film interfaces are rough, Selényi interference rings exist but a potential cross-correlation of the two rough interfaces of the film can be used to selectively enhance some of the interference rings while others are attenuated and might even disappear. This feature may in principle be used in determining the correlation properties of interfaces of films that otherwise would be difficult to access.

  18. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  19. Tuning Infrared Plasmon Resonance of Black Phosphorene Nanoribbon with a Dielectric Interface.

    Science.gov (United States)

    Debu, Desalegn T; Bauman, Stephen J; French, David; Churchill, Hugh O H; Herzog, Joseph B

    2018-02-19

    We report on the tunable edge-plasmon-enhanced absorption of phosphorene nanoribbons supported on a dielectric substrate. Monolayer anisotropic black phosphorous (phosphorene) nanoribbons are explored for light trapping and absorption enhancement on different dielectric substrates. We show that these phosphorene ribbons support infrared surface plasmons with high spatial confinement. The peak position and bandwidth of the calculated phosphorene absorption spectra are tunable with low loss over a wide wavelength range via the surrounding dielectric environment of the periodic nanoribbons. Simulation results show strong edge plasmon modes and enhanced absorption as well as a red-shift of the peak resonance wavelength. The periodic Fabry-Perot grating model was used to analytically evaluate the absorption resonance arising from the edge of the ribbons for comparison with the simulation. The results show promise for the promotion of phosphorene plasmons for both fundamental studies and potential applications in the infrared spectral range.

  20. Insulating electrodes: a review on biopotential front ends for dielectric skin–electrode interfaces

    International Nuclear Information System (INIS)

    Spinelli, Enrique; Haberman, Marcelo

    2010-01-01

    Insulating electrodes, also known as capacitive electrodes, allow acquiring biopotentials without galvanic contact with the body. They operate with displacement currents instead of real charge currents, and the electrolytic electrode–skin interface is replaced by a dielectric film. The use of insulating electrodes is not the end of electrode interface problems but the beginning of new ones: coupling capacitances are of the order of pF calling for ultra-high input impedance amplifiers and careful biasing, guarding and shielding techniques. In this work, the general requirements of front ends for capacitive electrodes are presented and the different contributions to the overall noise are discussed and estimated. This analysis yields that noise bounds depend on features of the available devices as current and voltage noise, but the final noise level also depends on parasitic capacitances, requiring a careful shield and printed circuit design. When the dielectric layer is placed on the skin, the present-day amplifiers allow achieving noise levels similar to those provided by wet electrodes. Furthermore, capacitive electrode technology allows acquiring high quality ECG signals through thin clothes. A prototype front end for capacitive electrodes was built and tested. ECG signals were acquired with these electrodes in direct contact with the skin and also through cotton clothes 350 µm thick. They were compared with simultaneously acquired signals by means of wet electrodes and no significant differences were observed between both output signals

  1. Theory of tailorable optical response of two-dimensional arrays of plasmonic nanoparticles at dielectric interfaces.

    Science.gov (United States)

    Sikdar, Debabrata; Kornyshev, Alexei A

    2016-09-22

    Two-dimensional arrays of plasmonic nanoparticles at interfaces are promising candidates for novel optical metamaterials. Such systems materialise from 'top-down' patterning or 'bottom-up' self-assembly of nanoparticles at liquid/liquid or liquid/solid interfaces. Here, we present a comprehensive analysis of an extended effective quasi-static four-layer-stack model for the description of plasmon-resonance-enhanced optical responses of such systems. We investigate in detail the effects of the size of nanoparticles, average interparticle separation, dielectric constants of the media constituting the interface, and the nanoparticle position relative to the interface. Interesting interplays of these different factors are explored first for normally incident light. For off-normal incidence, the strong effects of the polarisation of light are found at large incident angles, which allows to dynamically tune the reflectance spectra. All the predictions of the theory are tested against full-wave simulations, proving this simplistic model to be adequate within the quasi-static limit. The model takes seconds to calculate the system's optical response and makes it easy to unravel the effect of each system parameter. This helps rapid rationalization of experimental data and understanding of the optical signals from these novel 'metamaterials', optimised for light reflection or harvesting.

  2. High-k dielectrics as bioelectronic interface for field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Borstlap, D

    2007-03-15

    Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

  3. Ion association at discretely-charged dielectric interfaces: Giant charge inversion

    Science.gov (United States)

    Wang, Zhi-Yong; Wu, Jianzhong

    2017-07-01

    Giant charge reversal has been identified for the first time by Monte Carlo simulation for a discretely charged surface in contact with a trivalent electrolyte solution. It takes place regardless of the surface charge density under study and the monovalent salt. In stark contrast to earlier predictions based on the 2-dimensional Wigner crystal model to describe strong correlation of counterions at the macroion surface, we find that giant charge reversal reflects an intricate interplay of ionic volume effects, electrostatic correlations, surface charge heterogeneity, and the dielectric response of the confined fluids. While the novel phenomenon is yet to be confirmed with experiment, the simulation results appear in excellent agreement with a wide range of existing observations in the subregime of charge inversion. Our findings may have far-reaching implications to understanding complex electrochemical phenomena entailing ionic fluids under dielectric confinements.

  4. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  5. Study of physicochemical stability of the copper/polyphenylquinoxaline interfaces

    Science.gov (United States)

    Even, R.; Palleau, J.; Oberlin, J. C.; Pantel, R.; Laviale, D.; Templier, F.; Torres, J.; Giustiniani, R.; Cros, A.

    Thin film technologies are now applied in building up multilayered chip to chip interconnections to achieve agressive requirement such as high electrical performance or extreme compactness. Copper as conductor and a new polymeric material, a poly phenyl quinoxaline, as dielectric have been chose to fulfill demanding electrical and physical conditions. Thermal stability at the interface Cu/polymer and polymer/Cu during polymer curing process is very important to preserve good adhesion between the conductor and dielectric materials. We have studied in this work the interfacial behavior as a function of annealing temperature and of annealing atmosphere.

  6. Photoconductivity and dielectric studies of potassium pentaborate

    Indian Academy of Sciences (India)

    Single crystal of potassium pentaborate (KB5) has been grown by solution growth ... equipped with the Gunn Oscillator guided with rectangular wave-guide. ... its dielectric behaviour with the change of frequency has also been investigated.

  7. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  8. Investigation of the chemistry of the dielectric/FeCoTb interface by x-ray photoelectron spectroscopy and Auger electron spectroscopy

    International Nuclear Information System (INIS)

    Stickle, W.F.; Coulman, D.

    1987-01-01

    The interfacial chemistry of magneto-optic structures of sputter deposited SiO, SiO 2 , Si 3 N 4 /FeCoTb/SiO, SiO 2 , and Si 3 N 4 was studied in detail by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS and AES depth profiles have revealed a substantial amount of redox chemistry at the dielectric/rare-earth transition metal interfaces. The chemical reactions occur preferentially with the terbium as revealed in the XPS portion of the study by the formation of terbium oxide and terbium silicide. In the case of Si 3 N 4 evidence of TbN/sub x/ has also been observed. ''As deposited'' and annealed samples of the magneto-optic structures are compared and contrasted. It is concluded that Si 3 N 4 is a superior dielectric for magneto-optic media

  9. Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

    Energy Technology Data Exchange (ETDEWEB)

    Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, 2410 Campus Shore Drive, Raleigh, North Carolina 27695 (United States)

    2015-06-15

    Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps with a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.

  10. Microstructure Study For Optimization Of Dielectric Property Of Electrical Porcelain

    International Nuclear Information System (INIS)

    Tak, S. K.; Shekhawat, M. S.; Mangal, R.

    2010-01-01

    Five sample mixtures of kaolin, ball clay, feldspar and Quartz were formulated and porcelain samples fabricated. Crystalline phases and mullite morphology were studied using XRD and SEM respectively. A composition of 30% kaolin, 15% ball clay, 30% feldspar and 25% quartz yielded a body with high dielectric strength of 19 kV/mm compare to an ISO graded product having dielectric strength 14.6 KV/mm after firing at 1225 deg. C.

  11. SOFC interface studies

    DEFF Research Database (Denmark)

    Jacobsen, Torben; Bay, Lasse; West, Keld

    performance and inductive hysteresis phenomena often observed in SOFC kinetic studies (\\ref{TJ01}). Fig.\\,\\ref{cath_laser} shows the YSZ surface developed below a Pt point electrode polarised at -0.10\\, V at $1000^\\circ$C for a period of 85 days. The structural as well as the compositional changes...

  12. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  13. Measurements of water molecule density by tunable diode laser absorption spectroscopy in dielectric barrier discharges with gas-water interface

    Science.gov (United States)

    Tachibana, Kunihide; Nakamura, Toshihiro; Kawasaki, Mitsuo; Morita, Tatsuo; Umekawa, Toyofumi; Kawasaki, Masahiro

    2018-01-01

    We measured water molecule (H2O) density by tunable diode-laser absorption spectroscopy (TDLAS) for applications in dielectric barrier discharges (DBDs) with a gas-water interface. First, the effects of water temperature and presence of gas flow were tested using a Petri dish filled with water and a gas injection nozzle. Second, the TDLAS system was applied to the measurements of H2O density in two types of DBDs; one was a normal (non-inverted) type with a dielectric-covered electrode above a water-filled counter electrode and the other was an inverted type with a water-suspending mesh electrode above a dielectric-covered counter electrode. The H2O density in the normal DBD was close to the density estimated from the saturated vapor pressure, whereas the density in the inverted DBD was about half of that in the former type. The difference is attributed to the upward gas flow in the latter type, that pushes the water molecules up towards the gas-water interface.

  14. Self-Powered Random Number Generator Based on Coupled Triboelectric and Electrostatic Induction Effects at the Liquid-Dielectric Interface.

    Science.gov (United States)

    Yu, Aifang; Chen, Xiangyu; Cui, Haotian; Chen, Libo; Luo, Jianjun; Tang, Wei; Peng, Mingzeng; Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

    2016-12-27

    Modern cryptography increasingly employs random numbers generated from physical sources in lieu of conventional software-based pseudorandom numbers, primarily owing to the great demand of unpredictable, indecipherable cryptographic keys from true random numbers for information security. Thus, far, the sole demonstration of true random numbers has been generated through thermal noise and/or quantum effects, which suffers from expensive and complex equipment. In this paper, we demonstrate a method for self-powered creation of true random numbers by using triboelectric technology to collect random signals from nature. This random number generator based on coupled triboelectric and electrostatic induction effects at the liquid-dielectric interface includes an elaborately designed triboelectric generator (TENG) with an irregular grating structure, an electronic-optical device, and an optical-electronic device. The random characteristics of raindrops are harvested through TENG and consequently transformed and converted by electronic-optical device and an optical-electronic device with a nonlinear characteristic. The cooperation of the mechanical, electrical, and optical signals ensures that the generator possesses complex nonlinear input-output behavior and contributes to increased randomness. The random number sequences are deduced from final electrical signals received by an optical-electronic device using a familiar algorithm. These obtained random number sequences exhibit good statistical characteristics, unpredictability, and unrepeatability. Our study supplies a simple, practical, and effective method to generate true random numbers, which can be widely used in cryptographic protocols, digital signatures, authentication, identification, and other information security fields.

  15. Metallic nanoparticles in dielectrics: A comparative study

    KAUST Repository

    Agambayev, Agamyrat; Farhat, Mohamed; Bagci, Hakan; Salama, Khaled N.

    2017-01-01

    The Maxwell-Garnett method is used to predict the effective dielectric constant and the tangent loss of various composites consisting of a PVDF-TrFE-CFE-matrix and metallic microsphere fillers made of Cu, Ni, W, Zn, or Fe. Simulation results demonstrate that for small filler fraction values and at low frequencies, the electrical properties of the resulting composite do not depend on the conductivity of the filler. These findings show that composites fabricated using cheaper metal nanoparticle fillers are as effective as those fabricated using expensive ones.

  16. Metallic nanoparticles in dielectrics: A comparative study

    KAUST Repository

    Agambayev, Agamyrat

    2017-10-25

    The Maxwell-Garnett method is used to predict the effective dielectric constant and the tangent loss of various composites consisting of a PVDF-TrFE-CFE-matrix and metallic microsphere fillers made of Cu, Ni, W, Zn, or Fe. Simulation results demonstrate that for small filler fraction values and at low frequencies, the electrical properties of the resulting composite do not depend on the conductivity of the filler. These findings show that composites fabricated using cheaper metal nanoparticle fillers are as effective as those fabricated using expensive ones.

  17. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

    International Nuclear Information System (INIS)

    Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

    2006-01-01

    The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

  18. Ion association at discretely-charged dielectric interfaces: Giant charge inversion [Dielectric response controlled ion association at physically heterogeneous surfaces: Giant charge reversal

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhi -Yong [Chongqing Univ. of Technology, Chongqing (China); Univ. of California, Riverside, CA (United States); Wu, Jianzhong [Univ. of California, Riverside, CA (United States)

    2017-07-11

    Giant charge reversal has been identified for the first time by Monte Carlo simulation for a discretely charged surface in contact with a trivalent electrolyte solution. It takes place regardless of the surface charge density under study and the monovalent salt. In stark contrast to earlier predictions based on the 2-dimensional Wigner crystal model to describe strong correlation of counterions at the macroion surface, we find that giant charge reversal reflects an intricate interplay of ionic volume effects, electrostatic correlations, surface charge heterogeneity, and the dielectric response of the confined fluids. While the novel phenomenon is yet to be confirmed with experiment, the simulation results appear in excellent agreement with a wide range of existing observations in the subregime of charge inversion. Lastly, our findings may have far-reaching implications to understanding complex electrochemical phenomena entailing ionic fluids under dielectric confinements.

  19. Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence

    Directory of Open Access Journals (Sweden)

    Zhi-Min Liao

    2012-06-01

    Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.

  20. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Masamichi Suzuki

    2012-03-01

    Full Text Available A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3 high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process.

  1. Studies on conductivity and dielectric properties of polyaniline–zinc ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. In the present paper, we report electrical conductivity and dielectric studies on the composites of conducting polyaniline (PANI) with crystalline semiconducting ZnS powder, wherein PANI has been taken as inclusion and ZnS crystallites as the host matrix. From the studies, it has been observed that the value of.

  2. Dielectric studies of fluids with reentrant resonators

    International Nuclear Information System (INIS)

    Goodwin, A.R.H.; Moldover, M.R.

    1993-01-01

    The authors have used a reentrant radio-frequency (rf) cavity as a resonator operating near 375 MHz to measure changes in the dielectric constant of fluids within it. The utility of these measurements was demonstrated by determining the dipole moment of 1,1,1,2,3,3-hexafluoropropane, a candidate replacement refrigerant (denoted R236ea) and by detecting the phase boundaries in the mixture [(1-x)C 2 H 6 + xCO 2 ], for the mole fraction x = 0.492. The densities of the coexisting phases of the mixture were determined using the Clausius-Mossotti relation which has errors on the order of 0.5% in this application. To test the accuracy of the present techniques, the rf resonator was calibrated with helium and then used to redetermine the molar polarizability A e of argon. The results were in excellent agreement with published values. The design of the reentrant resonator makes it suitable for use with corrosive fluids at temperature up to 400 degrees C

  3. Dielectric and thermal studies on gel grown strontium tartrate ...

    Indian Academy of Sciences (India)

    Administrator

    frequencies (110–700 kHz) of the applied a.c. field. It increases ... lytical studies. It is explained that crystallographic change due to polymorphic phase transition may be occur- ... inexpensive and unique method for growing crystals that show poor ... on dielectric and thermal characteristics of this material are described. 2.

  4. Structural, dielectric and piezoelectric study of Ca-, Zr-modified ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 40; Issue 5. Structural, dielectric and piezoelectric study of Ca-, Zr-modified BaTiO 3 lead-free ceramics. H MSOUNI A TACHAFINE M EL AATMANI D FASQUELLE J C CARRU M EL HAMMIOUI M RGUITI A ZEGZOUTI A OUTZOURHIT M DAOUD. Volume 40 Issue 5 ...

  5. Multiple Bloch surface waves in visible region of light at the interfaces between rugate filter/rugate filter and rugate filter/dielectric slab/rugate filter

    Science.gov (United States)

    Ullah Manzoor, Habib; Manzoor, Tareq; Hussain, Masroor; Manzoor, Sanaullah; Nazar, Kashif

    2018-04-01

    Surface electromagnetic waves are the solution of Maxwell’s frequency domain equations at the interface of two dissimilar materials. In this article, two canonical boundary-value problems have been formulated to analyze the multiplicity of electromagnetic surface waves at the interface between two dissimilar materials in the visible region of light. In the first problem, the interface between two semi-infinite rugate filters having symmetric refractive index profiles is considered and in the second problem, to enhance the multiplicity of surface electromagnetic waves, a homogeneous dielectric slab of 400 nm is included between two semi-infinite symmetric rugate filters. Numerical results show that multiple Bloch surface waves of different phase speeds, different polarization states, different degrees of localization and different field profiles are propagated at the interface between two semi-infinite rugate filters. Having two interfaces when a homogeneous dielectric layer is placed between two semi-infinite rugate filters has increased the multiplicity of electromagnetic surface waves.

  6. On gel electrophoresis of dielectric charged particles with hydrophobic surface: A combined theoretical and numerical study.

    Science.gov (United States)

    Majee, Partha Sarathi; Bhattacharyya, Somnath; Gopmandal, Partha Pratim; Ohshima, Hiroyuki

    2018-03-01

    A theoretical study on the gel electrophoresis of a charged particle incorporating the effects of dielectric polarization and surface hydrophobicity at the particle-liquid interface is made. A simplified model based on the weak applied field and low charge density assumption is also presented and compared with the full numerical model for a nonpolarizable particle to elucidate the nonlinear effects such as double layer polarization and relaxation as well as surface conduction. The main motivation of this study is to analyze the electrophoresis of the surface functionalized nanoparticle with tunable hydrophobicity or charged fluid drop in gel medium by considering the electrokinetic effects and hydrodynamic interactions between the particle and the gel medium. An effective medium approach, in which the transport in the electrolyte-saturated hydrogel medium is governed by the Brinkman equation, is adopted in the present analysis. The governing electrokinetic equations based on the conservation principles are solved numerically. The Navier-slip boundary condition along with the continuity condition of dielectric displacement are imposed on the surface of the hydrophobic polarizable particle. The impact of the slip length on the electrophoresis is profound for a thinner Debye layer, however, surface conduction effect also becomes significant for a hydrophobic particle. Impact of hydrophobicity and relaxation effects are higher for a larger particle. Dielectric polarization creates a reduction in its electrophoretic propulsion and has negligible impact at the thinner Debye length as well as lower gel screening length. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  8. Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

    Science.gov (United States)

    Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

    2011-11-09

    Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

  9. Role of electron swarm studies in the development of gaseous dielectrics

    International Nuclear Information System (INIS)

    Christophorou, L.G.

    1981-01-01

    Recent knowledge provided by swarm studies allowing control of the number densities and energies of free electrons in electrically stressed gases is highlighted. This knowledge aided the discovery of new gas dielectrics and the tailoring of gas dielectric mixtures. The role of electron attachment in the choice of unitary gas dielectrics or electronegative components in dielectric gas mixtures, and the role of electron scattering at low energies in the choice of buffer gases for mixtures is outlined

  10. Effect of the nanofilm thickness on the properties of the two-dimensional electron gas at the interface between two dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Gadiev, R. M., E-mail: gadiev.radik@gmail.com; Lachinov, A. N. [M. Akmullah Baskir State Pedagogical University (Russian Federation); Karamov, D. D. [Russian Academy of Sciences, Ufa Scientific Center (Russian Federation); Kiselev, D. A. [National University of Science and Technology MISiS (Russian Federation); Kornilov, V. M. [M. Akmullah Baskir State Pedagogical University (Russian Federation)

    2016-07-15

    The mechanism of formation of the two-dimensional conductivity along the interface between two polymer dielectrics is experimentally studied. The idea of “polar catastrophe,” which was successfully used earlier to explain the electronic properties of the interface between two perovskites LaAlO{sub 3}/SrTiO{sub 3}, is chosen as a base hypothesis. Piezoelectric response microscopy is used to reveal the presence of spontaneous polarization on the surface of a polymer film, and the remanent polarization is found to decrease with increasing film thickness. As in the case of perovskites, the polymer film thickness is found to strongly affect the electrical conductivity along the interface. Substantial differences between these phenomena are detected. The change in the electrical conductivity is shown to be caused by a significant increase in the charge carrier mobility when the film thickness decreases below a certain critical value. The relation between the change in the carrier mobility and the change in the spontaneous surface polarization of the polymer film when its thickness decreases is discussed.

  11. Dielectric properties of isolated clusters beam deflection studies

    CERN Document Server

    Heiles, Sven

    2013-01-01

    A broad range of state-of-the-art methods to determine properties of clusters are presented. The experimental setup and underlying physical concepts of these experiments are described. Furthermore, existing theoretical models to explain the experimental observations are introduced and the possibility to deduce structural information from measurements of dielectric properties is discussed. Additional case studies are presented in the book to emphasize the possibilities but also drawbacks of the methods.

  12. M-Adapting Low Order Mimetic Finite Differences for Dielectric Interface Problems

    Energy Technology Data Exchange (ETDEWEB)

    McGregor, Duncan A. [Oregon State Univ., Corvallis, OR (United States); Gyrya, Vitaliy [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Manzini, Gianmarco [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-03-07

    We consider a problem of reducing numerical dispersion for electromagnetic wave in the domain with two materials separated by a at interface in 2D with a factor of two di erence in wave speed. The computational mesh in the homogeneous parts of the domain away from the interface consists of square elements. Here the method construction is based on m-adaptation construction in homogeneous domain that leads to fourth-order numerical dispersion (vs. second order in non-optimized method). The size of the elements in two domains also di ers by a factor of two, so as to preserve the same value of Courant number in each. Near the interface where two meshes merge the mesh with larger elements consists of degenerate pentagons. We demonstrate that prior to m-adaptation the accuracy of the method falls from second to rst due to breaking of symmetry in the mesh. Next we develop m-adaptation framework for the interface region and devise an optimization criteria. We prove that for the interface problem m-adaptation cannot produce increase in method accuracy. This is in contrast to homogeneous medium where m-adaptation can increase accuracy by two orders.

  13. Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

    Science.gov (United States)

    Ben Elbahri, M.; Kahouli, A.; Mercey, B.; Lebedev, O.; Donner, W.; Lüders, U.

    2018-02-01

    Dielectrics based on amorphous sub-nanometric laminates of TiO2 and Al2O3 are subject to elevated dielectric losses and leakage currents, in large parts due to the extremely thin individual layer thickness chosen for the creation of the Maxwell-Wagner relaxation and therefore the high apparent dielectric constants. The optimization of performances of the laminate itself being strongly limited by this contradiction concerning its internal structure, we will show in this study that modifications of the dielectric stack of capacitors based on these sub-nanometric laminates can positively influence the dielectric losses and the leakage, as for example the nature of the electrodes, the introduction of thick insulating layers at the laminate/electrode interfaces and the modification of the total laminate thickness. The optimization of the dielectric stack leads to the demonstration of a capacitor with an apparent dielectric constant of 90, combined with low dielectric loss (tan δ) of 7 · 10-2 and with leakage currents smaller than 1  ×  10-6 A cm-2 at 10 MV m-1.

  14. Impedance/thermally stimulated depolarization current and microstructural relations at interfaces in degraded perovskite dielectrics

    Science.gov (United States)

    Liu, Wei-En

    In this work, a detailed investigation of electrical degradation has been performed on a model perovskite dielectric, Fe-doped SrTiO3 in both single and polycrystalline forms. In the single crystals, three different types of relaxation process were identified by TSDC, namely dipolar orientation of Fe'Ti-VÖ complexes, trap charges of FexTi-VÖ , and ionic space charge with the mobile VÖ . The energetics and concentrations of these are monitored as a function of the degradation process. Furthermore, IS is used to model the mechanisms that are spatially redistributed owning to the migration of VÖ towards the cathodic region of the crystal. Through modeling all the complex impedance Z*, modulus M*, admittance Y* and capacitance C*, an equivalent circuit model can be developed and key contributors to the IS can be identified. From this it is considered that the cathodic region changes to a conduction mechanism that is both band electron and polaron controlled. The major change during the degradation is to the polaron conduction pathways. Due to the nature of low polaron hopping mobility in this model system, the conductivity from both conductions become comparable providing that the calculated polaron concentration is around 5 order greater than that of band electron. The spatial dimension of the distributed conduction mechanisms is also modeled through the I.S. analysis. Excellent agreement is obtained between the IS data and the EELS data, where ≈30 microm of conducting region is developed at the cathode, and a corresponding high oxygen vacancy concentration on the order of 10 19/cm3 is obtained after degradation. Other than those relaxation mechanisms identified in the Fe-doped SrTiO 3 single crystal system, an extra relaxation mechanism was found in the polycrystalline systems and was attributed to the relaxation of oxygen vacancies across grain boundaries. Using the initial rise method of TSDC, the activation energies estimated for the relaxation of defect

  15. Growth, characterization and dielectric property studies of gel grown ...

    Indian Academy of Sciences (India)

    Administrator

    chemical reaction method. Plate-like single ... Barium succinate; gel growth; single crystals; dielectric constant; dielectric loss. 1. .... The chemical reaction involved in the birth of a new .... due to the displacement of electrons and ions, respec-.

  16. OTFT with pentacene-gate dielectric interface modified by silicon nanoparticles

    International Nuclear Information System (INIS)

    Jakabovic, J.; Kovac, J.; Srnanek, R.; Guldan, S.; Donoval, D.; Weis, M.; Sokolsky, M.; Cirak, J.; Broch, K.; Schreiber, F.

    2011-01-01

    We have for the first time investigated the structural and electrical properties of pentacene OTFT deposited on the semiconductor-gate insulator interface covered with SiNPs monolayer prepared by the LB method and compared these to a reference sample (without SiNPs). The micro-Raman, AFM and XRD measurements confirmed that the pentacene layer deposited on the semiconductor-gate insulator interface covered with a SiNPs monolayer on both hydrophobic and hydrophilic surfaces changes the structure. The Raman measurements show that the average value of α is between 0.8 and 1.0. The different structural quality of pentacene leads to better OTFTs electrical characteristics mainly saturation current of OTFTs with SiNPs increasing (∼ 2.5 x) with storing time (85 days) in comparison to OTFTs without SiNPs, which decrease similarly after 85 days.

  17. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  18. Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

    Science.gov (United States)

    Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

    2016-05-01

    The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

  19. Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

    International Nuclear Information System (INIS)

    Lo, G.Q.; Shih, D.K.; Ting, W.; Kwong, D.L.

    1989-01-01

    In this letter, the radiation-induced interface state generation ΔD it in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO 2 . The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ''hardness'' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides. (author)

  20. Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jianqiu, E-mail: jianqiu@vt.edu [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Tea, Eric; Li, Guanchen [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Hin, Celine [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Department of Material Science and Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road-MC 0238, Blacksburg, VA 24061 (United States)

    2017-06-01

    Highlights: • Hydrogen release process at the Al/SiO{sub 2} metal-oxide interface has been investigated. • A mathematical model that estimates the hydrogen release potential has been proposed. • Al atoms, Al−O bonds, and Si−Al bonds are the major hydrogen traps at the Al/SiO{sub 2} interface. • Hydrogen atoms are primarily release from Al−H and O−H bonds at the Al/SiO{sub 2} metal-oxide interface. - Abstract: The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO{sub 2} interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO{sub 2} metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Al−Si bonds, passivating a Si sp{sup 3} orbital. Interstitial hydrogen atoms can also break interfacial Al−O bonds, or be adsorbed at the interface on aluminum, forming stable Al−H−Al bridges. We showed that hydrogenated O−H, Si−H and Al−H bonds at the Al/SiO{sub 2} interfaces are polarized. The resulting bond dipole weakens the O−H and Si−H bonds, but strengthens the Al−H bond under the application of a positive bias at the metal gate. Our calculations indicate that Al−H bonds and O−H bonds are more important than Si−H bonds for the hydrogen release process.

  1. Numerical studies on the electromagnetic properties of the nonlinear Lorentz Computational model for the dielectric media

    International Nuclear Information System (INIS)

    Abe, H.; Okuda, H.

    1994-06-01

    We study linear and nonlinear properties of a new computer simulation model developed to study the propagation of electromagnetic waves in a dielectric medium in the linear and nonlinear regimes. The model is constructed by combining a microscopic model used in the semi-classical approximation for the dielectric media and the particle model developed for the plasma simulations. It is shown that the model may be useful for studying linear and nonlinear wave propagation in the dielectric media

  2. A preliminary study on the dielectric constant of WPC based on some tropical woods

    International Nuclear Information System (INIS)

    Chia, L.H.L.; Chua, P.H.; Hon, Y.S.; Lee, E.

    1986-01-01

    The use of WPC as an important insulating material is studied by determining its dielectric constant. The variation of dielectric constant with moisture content is also investigated. Preliminary results show that all untreated woods studied have a higher dielectric constant than their polymer composites with the exception of Kapur and Keruing. It is therefore postulated that the presence of polymers has led to a decrease in the number of polarizable units. Such a material may be useful commercially. (author)

  3. Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

    International Nuclear Information System (INIS)

    Schumacher, Daniel

    2013-01-01

    The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La 0.66 Sr 0.33 MnO 3 /SrTiO 3 (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La 0.5 Sr 0.5 MnO 3 (LSMO) and BaTiO 3 (BTO). A possible dependence of the interface near magnetic structure of La 1-x Sr x MnO 3 having a doping level x close to the ferromagnetic-antiferromagnetic phase

  4. Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, Daniel

    2013-10-01

    The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La{sub 0.66}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La{sub 0.5}Sr{sub 0.5}MnO{sub 3} (LSMO) and BaTiO{sub 3} (BTO). A possible dependence of the interface near magnetic structure of La{sub 1-x}Sr{sub x}MnO{sub 3} having a doping level x

  5. Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric

    Science.gov (United States)

    Cheng, Yunfei; Wang, Wu

    2017-10-01

    In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.

  6. Computational study of textured ferroelectric polycrystals: Dielectric and piezoelectric properties of template-matrix composites

    Science.gov (United States)

    Zhou, Jie E.; Yan, Yongke; Priya, Shashank; Wang, Yu U.

    2017-01-01

    Quantitative relationships between processing, microstructure, and properties in textured ferroelectric polycrystals and the underlying responsible mechanisms are investigated by phase field modeling and computer simulation. This study focuses on three important aspects of textured ferroelectric ceramics: (i) grain microstructure evolution during templated grain growth processing, (ii) crystallographic texture development as a function of volume fraction and seed size of the templates, and (iii) dielectric and piezoelectric properties of the obtained template-matrix composites of textured polycrystals. Findings on the third aspect are presented here, while an accompanying paper of this work reports findings on the first two aspects. In this paper, the competing effects of crystallographic texture and template seed volume fraction on the dielectric and piezoelectric properties of ferroelectric polycrystals are investigated. The phase field model of ferroelectric composites consisting of template seeds embedded in matrix grains is developed to simulate domain evolution, polarization-electric field (P-E), and strain-electric field (ɛ-E) hysteresis loops. The coercive field, remnant polarization, dielectric permittivity, piezoelectric coefficient, and dissipation factor are studied as a function of grain texture and template seed volume fraction. It is found that, while crystallographic texture significantly improves the polycrystal properties towards those of single crystals, a higher volume fraction of template seeds tends to decrease the electromechanical properties, thus canceling the advantage of ferroelectric polycrystals textured by templated grain growth processing. This competing detrimental effect is shown to arise from the composite effect, where the template phase possesses material properties inferior to the matrix phase, causing mechanical clamping and charge accumulation at inter-phase interfaces between matrix and template inclusions. The computational

  7. Numerical studies on soliton propagation in the dielectric media by the nonlinear Lorentz computational model

    International Nuclear Information System (INIS)

    Abe, H.; Okuda, H.

    1994-06-01

    Soliton propagation in the dielectric media has been simulated by using the nonlinear Lorentz computational model, which was recently developed to study the propagation of electromagnetic waves in a linear and a nonlinear dielectric. The model is constructed by combining a microscopic model used in the semi-classical approximation for dielectric media and the particle model developed for the plasma simulations. The carrier wave frequency is retained in the simulation so that not only the envelope of the soliton but also its phase can be followed in time. It is shown that the model may be useful for studying pulse propagation in the dielectric media

  8. Dielectric property study of poly(4-vinylphenol)-graphene oxide nanocomposite thin film

    Science.gov (United States)

    Roy, Dhrubojyoti

    2018-05-01

    Thin film capacitor device having a sandwich structure of indium tin oxide (ITO)-coated glass/polymer or polymer nanocomposite /silver has been fabricated and their dielectric and leakage current properties has been studied. The dielectric properties of the capacitors were characterized for frequencies ranging from 1 KHz to 1 MHz. 5 wt% Poly(4-vinylphenol)(PVPh)-Graphene (GO) nanocomposite exhibited an increase in dielectric constant to 5.6 and small rise in dielectric loss to around˜0.05 at 10 KHz w.r.t polymer. The DC conductivity measurements reveal rise of leakage current in nanocomposite.

  9. Study of Super Dielectric Material for Novel Paradigm Capacitors

    Science.gov (United States)

    2018-03-01

    density, power density, dielectric constant, constant current, constant voltage, electric field minimization, dipole 15. NUMBER OF PAGES 85 16. PRICE... Technology and Strategies for Improvement ..................................................................................6 4. Super Dielectric...ds infinitesimal displacement dt infinitesimal time DT discharge time dV infinitesimal voltage E electric field Etot total energy EC Lab

  10. Quantum chemistry in arbitrary dielectric environments: Theory and implementation of nonequilibrium Poisson boundary conditions and application to compute vertical ionization energies at the air/water interface

    Science.gov (United States)

    Coons, Marc P.; Herbert, John M.

    2018-06-01

    Widely used continuum solvation models for electronic structure calculations, including popular polarizable continuum models (PCMs), usually assume that the continuum environment is isotropic and characterized by a scalar dielectric constant, ɛ. This assumption is invalid at a liquid/vapor interface or any other anisotropic solvation environment. To address such scenarios, we introduce a more general formalism based on solution of Poisson's equation for a spatially varying dielectric function, ɛ(r). Inspired by nonequilibrium versions of PCMs, we develop a similar formalism within the context of Poisson's equation that includes the out-of-equilibrium dielectric response that accompanies a sudden change in the electron density of the solute, such as that which occurs in a vertical ionization process. A multigrid solver for Poisson's equation is developed to accommodate the large spatial grids necessary to discretize the three-dimensional electron density. We apply this methodology to compute vertical ionization energies (VIEs) of various solutes at the air/water interface and compare them to VIEs computed in bulk water, finding only very small differences between the two environments. VIEs computed using approximately two solvation shells of explicit water molecules are in excellent agreement with experiment for F-(aq), Cl-(aq), neat liquid water, and the hydrated electron, although errors for Li+(aq) and Na+(aq) are somewhat larger. Nonequilibrium corrections modify VIEs by up to 1.2 eV, relative to models based only on the static dielectric constant, and are therefore essential to obtain agreement with experiment. Given that the experiments (liquid microjet photoelectron spectroscopy) may be more sensitive to solutes situated at the air/water interface as compared to those in bulk water, our calculations provide some confidence that these experiments can indeed be interpreted as measurements of VIEs in bulk water.

  11. The study of dielectric properties of the endohedral fullerenes

    Science.gov (United States)

    Bhusal, Shusil

    Dielectric response of the metal nitride fullerenes is studied using the density functional theory at the all-electron level using generalized gradient approximation. The dielectric response is studied by computing the static dipole polarizabilities using the finite field method, i.e. by numerically differentiating the dipole moments with respect to electric field. The endohedral fullerenes studied in this work are Sc3N C68(6140), Sc3N C68(6146), Sc3N C70(7854), Sc3N C70(7960), Sc3N C76(17490), Sc3N C78(22010), Sc3N C80(31923), Sc3N C80(31924), Sc3N C82(39663), Sc3N C90(43), Sc3N C90(44), Sc3N C92(85), Sc3N C94(121), Sc3N C96(186), Sc3N C98(166). Using the Voronoi and Hirschfield approaches as implemented in our NRLMOL code, we determine the atomic contributions to the total polarizability. The site-specific contributions to the polarizability of endohedral fullerenes allowed us to determine the polarizability of two subsystems: the fullerene shell and the encapsulated Sc3N unit. Our results showed that the contributions to the total polarizability from the encapsulated Sc3N units are vanishingly small. Thus, the total polarizability of the endohedral fullerene is almost entirely due to the outer fullerene shell. These fullerenes are excellent molecular models of a Faraday cage.

  12. Single-layer graphene-assembled 3D porous carbon composites with PVA and Fe₃O₄ nano-fillers: an interface-mediated superior dielectric and EMI shielding performance.

    Science.gov (United States)

    Rao, B V Bhaskara; Yadav, Prasad; Aepuru, Radhamanohar; Panda, H S; Ogale, Satishchandra; Kale, S N

    2015-07-28

    In this study, a novel composite of Fe3O4 nanofiller-decorated single-layer graphene-assembled porous carbon (SLGAPC) with polyvinyl alcohol (PVA) having flexibility and a density of 0.75 g cm(-3) is explored for its dielectric and electromagnetic interference (EMI) response properties. The composite is prepared by the solution casting method and its constituents are optimized as 15 wt% SLGAPC and 20 wt% Fe3O4 through a novel solvent relaxation nuclear magnetic resonance experiment. The PVA-SLGAPC-Fe3O4 composite shows high dielectric permittivity in the range of 1 Hz-10 MHz, enhanced by a factor of 4 as compared to that of the PVA-SLGAPC composite, with a reduced loss by a factor of 2. The temperature dependent dielectric properties reveal the activation energy behaviour with reference to the glass transition temperature (80 °C) of PVA. The dielectric hysteresis with the temperature cycle reveals a remnant polarization. The enhanced dielectric properties are suggested to be the result of improvement in the localized polarization of the integrated interface system (Maxwell-Wagner-Sillars (MWS) polarization) formed by the uniform adsorption of Fe3O4 on the surface of SLGAPC conjugated with PVA. The EMI shielding property of the composite with a low thickness of 0.3 mm in the X-band (8.2-12.4 GHz) shows a very impressive shielding efficiency of ∼15 dB and a specific shielding effectiveness of 20 dB (g cm(-3))(-1), indicating the promising character of this material for flexible EMI shielding applications.

  13. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

    Science.gov (United States)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2017-12-01

    The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

  14. SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH

    Science.gov (United States)

    Zhang, Xiaoxian; Myers, John N.; Huang, Huai; Shobha, Hosadurga; Chen, Zhan; Grill, Alfred

    2016-02-01

    PECVD deposited porous SiCOH with ultralow dielectric constant has been successfully integrated as the insulator in advanced interconnects to decrease the RC delay. The effects of NH3 plasma treatment and the effectiveness of the dielectric repair on molecular structures at the surface and buried interface of a pSiCOH film deposited on top of a SiCNH film on a Si wafer were fully characterized using sum frequency generation vibrational spectroscopy (SFG), supplemented by X-ray photoelectron spectroscopy. After exposure to NH3 plasma for 18 s, about 40% of the methyl groups were removed from the pSiCOH surface, and the average orientation of surface methyl groups tilted more towards the surface. The repair method used here effectively repaired the molecular structures at the pSiCOH surface but did not totally recover the entire plasma-damaged layer. Additionally, simulated SFG spectra with various average orientations of methyl groups at the SiCNH/pSiCOH buried interface were compared with the experimental SFG spectra collected using three different laser input angles to determine the molecular structural information at the SiCNH/pSiCOH buried interface after NH3 plasma treatment and repair. The molecular structures including the coverage and the average orientation of methyl groups at the buried interface were found to be unchanged by NH3 plasma treatment and repair.

  15. Optical studies of metallo-dielectric photonic crystals

    Science.gov (United States)

    Kamaev, Vladimir

    2007-12-01

    Metallo-dielectric photonic crystals (MDPCs) are characterized by a large difference between the dielectric constants of the constituents. Owing to their high DC conductivity a broad omnidirectional band gap is formed at low frequencies. At the same time there exist numerous propagating electromagnetic modes at frequencies above a cutoff. This gives a possibility of creating a "transparent" metal: a crystal transparent in the visible spectral range and simultaneously having high DC conductivity. Since the cutoff wavelength linearly scales with the crystal periodicity, in order to make an MDPC with propagating modes in the visible range the crystal periodicity has to be around a quarter micrometer. Fabrication of such a crystal is a challenging task. One of the feasible choices is natural or artificial opals, structures made of silica balls arranged into a close packed fcc lattice. The ball diameters could vary from 200 nm to several microns, allowing the desired optical features to be in the visible spectral range. In the present work we studied metal-infiltrated opals numerically, analytically, and experimentally (Chapters 1 and 4). Both theory and experiment revealed high reflectance of the samples at large wavelengths associated with the low frequency metallic band gap formation, and low reflectance at short wavelengths that has characteristic wiggles. Contrarily, the absorbance is low in the IR region and goes up towards the UV end, which is due to low group velocity of light and high metal absorption in the region. Numerical analysis of thin metal-infiltrated opals (˜3-5 layers) did show a transmission peak around the first reflectance minimum and cutoff frequency. In Chapter 5 we present transmission experiments on thin metal films perforated with periodic arrays of holes or deposited on an opal monolayer. Both types of 2D MDPCs exhibited anomalous transmission peaks associated with surface plasma excitations. It was shown that the phenomenon could be

  16. Dielectric and AC Conductivity Studies in PPy-Ag Nanocomposites

    OpenAIRE

    Praveenkumar, K.; Sankarappa, T.; Ashwajeet, J. S.; Ramanna, R.

    2015-01-01

    Polypyrrole and silver nanoparticles have been synthesized at 277 K by chemical route. Nanoparticles of polypyrrole-silver (PPy-Ag) composites were prepared by mixing polypyrrole and silver nanoparticles in different weight percentages. Dielectric properties as a function of temperature in the range from 300 K to 550 K and frequency in the range from 50 Hz to 1 MHz have been measured. Dielectric constant decreased with increase in frequency and temperature. Dielectric loss decreased with incr...

  17. Studying The Effect of Various Parameters on The Characteristics of The Dielectric and Metallic Photonic Crystals

    International Nuclear Information System (INIS)

    Ismail, M.; Badawy, Z.M.; Abdel-Rahman, E.

    2015-01-01

    Transmittance characteristics of two types of photonic crystals have been analysed using the transfer matrix method. The first one is the dielectric photonic crystal (DPC), and the second is the metallic photonic crystal (MPC). The effect of the most parameters on the transmission spectra of the dielectric and metallic photonic crystals has been studied

  18. Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

    2015-08-31

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

  19. Dielectric relaxation studies of dilute solutions of amides

    Energy Technology Data Exchange (ETDEWEB)

    Malathi, M.; Sabesan, R.; Krishnan, S

    2003-11-15

    The dielectric constants and dielectric losses of formamide, acetamide, N-methyl acetamide, acetanilide and N,N-dimethyl acetamide in dilute solutions of 1,4-dioxan/benzene have been measured at 308 K using 9.37 GHz, dielectric relaxation set up. The relaxation time for the over all rotation {tau}{sub (1)} and that for the group rotation {tau}{sub (2)} of (the molecules were determined using Higasi's method. The activation energies for the processes of dielectric relaxation and viscous flow were determined by using Eyring's rate theory. From relaxation time behaviour of amides in non-polar solvent, solute-solvent and solute-solute type of molecular association is proposed.

  20. First-principles study of dielectric properties of cerium oxide

    International Nuclear Information System (INIS)

    Yamamoto, Takenori; Momida, Hiroyoshi; Hamada, Tomoyuki; Uda, Tsuyoshi; Ohno, Takahisa

    2005-01-01

    We have theoretically investigated the dielectric properties of fluorite CeO 2 as well as hexagonal and cubic Ce 2 O 3 by using first-principles pseudopotentials techniques within the local density approximation. Calculated electronic and lattice dielectric constants of CeO 2 are in good agreement with previous theoretical and experimental results. For Ce 2 O 3 , the hexagonal phase has a lattice dielectric constant comparable to that of CeO 2 , whereas the cubic phase has a much smaller one. We have concluded that the enhancement of the dielectric constant in CeO 2 epitaxially grown on Si is not due to its lattice expansion experimentally observed nor regular formation of oxygen vacancies in CeO 2

  1. Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

    Science.gov (United States)

    Sundaram, Nandini Ganapathy

    Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400°C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet shrinkage rate requirements were salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap were evaluated by varying process pressure, power, substrate temperature and flow rate ratio (FRR) of processing gases. Both XPS and FTIR results confirmed that the stoichiometry of the ultra-low k (ULK) film is close to that of CF2 with no oxygen. C-V characteristics indicated the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 eV and 3.4 eV. Irradiation or plasma damage significantly impacts the ability to integrate the film in VSLI circuits. The film was evaluated after exposure to oxygen plasma and HMDS vapors and no change in the FTIR spectra or refractive index was observed. Film is resistant to attack by developers CD 26 and KOH. While the film dissolves in UVN-30 negative resist, it is impermeable to PGDMA. A 12% increase in dielectric constant and a decrease in contact angle from 65° to 47° was observed post e-beam exposure. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as

  2. Dielectric loss against piezoelectric power harvesting

    Science.gov (United States)

    Liang, Junrui; Shu-Hung Chung, Henry; Liao, Wei-Hsin

    2014-09-01

    Piezoelectricity is one of the most popular electromechanical transduction mechanisms for constructing kinetic energy harvesting systems. When a standard energy harvesting (SEH) interface circuit, i.e., bridge rectifier plus filter capacitor, is utilized for collecting piezoelectric power, the previous literature showed that the power conversion can be well predicted without much consideration for the effect of dielectric loss. Yet, as the conversion power gets higher by adopting power-boosting interface circuits, such as synchronized switch harvesting on inductor (SSHI), the neglect of dielectric loss might give rise to deviation in harvested power estimation. Given the continuous progress on power-boosting interface circuits, the role of dielectric loss in practical piezoelectric energy harvesting (PEH) systems should receive attention with better evaluation. Based on the integrated equivalent impedance network model, this fast track communication provides a comprehensive study on the susceptibility of harvested power in PEH systems under different conditions. It shows that, dielectric loss always counteracts piezoelectric power harvesting by causing charge leakage across piezoelectric capacitance. In particular, taking corresponding ideal lossless cases as references, the counteractive effect might be aggravated under one of the five conditions: larger dielectric loss tangent, lower vibration frequency, further away from resonance, weaker electromechanical coupling, or using power-boosting interface circuit. These relationships are valuable for the study of PEH systems, as they not only help explain the role of dielectric loss in piezoelectric power harvesting, but also add complementary insights for material, structure, excitation, and circuit considerations towards holistic evaluation and design for practical PEH systems.

  3. On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

    Directory of Open Access Journals (Sweden)

    Muhammad Nawaz

    2015-01-01

    Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

  4. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  5. Numerical study of the lateral resolution in electrostatic force microscopy for dielectric samples

    International Nuclear Information System (INIS)

    Riedel, C; AlegrIa, A; Colmenero, J; Schwartz, G A; Saenz, J J

    2011-01-01

    We present a study of the lateral resolution in electrostatic force microscopy for dielectric samples in both force and gradient modes. Whereas previous studies have reported expressions for metallic surfaces having potential heterogeneities (Kelvin probe force microscopy), in this work we take into account the presence of a dielectric medium. We introduce a definition of the lateral resolution based on the force due to a test particle being either a point charge or a polarizable particle on the dielectric surface. The behaviour has been studied over a wide range of typical experimental parameters: tip-sample distance (1-20) nm, sample thickness (0-5) μm and dielectric constant (1-20), using the numerical simulation of the equivalent charge method. For potential heterogeneities on metallic surfaces expressions are in agreement with the bibliography. The lateral resolution of samples having a dielectric constant of more than 10 tends to metallic behaviour. We found a characteristic thickness of 100 nm, above which the lateral resolution measured on the dielectric surface is close to that of an infinite medium. As previously reported, the lateral resolution is better in the gradient mode than in the force mode. Finally, we showed that for the same experimental conditions, the lateral resolution is better for a polarizable particle than for a charge, i.e. dielectric heterogeneities should always look 'sharper' (better resolved) than inhomogeneous charge distributions. This fact should be taken into account when interpreting images of heterogeneous samples.

  6. Numerical study of the lateral resolution in electrostatic force microscopy for dielectric samples

    Energy Technology Data Exchange (ETDEWEB)

    Riedel, C; AlegrIa, A; Colmenero, J [Departamento de Fisica de Materiales UPV/EHU, Facultad de Quimica, Apartado 1072, 20080 San Sebastian (Spain); Schwartz, G A [Centro de Fisica de Materiales CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, 20018 San Sebastian (Spain); Saenz, J J, E-mail: riedel@ies.univ-montp2.fr [Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastian (Spain)

    2011-07-15

    We present a study of the lateral resolution in electrostatic force microscopy for dielectric samples in both force and gradient modes. Whereas previous studies have reported expressions for metallic surfaces having potential heterogeneities (Kelvin probe force microscopy), in this work we take into account the presence of a dielectric medium. We introduce a definition of the lateral resolution based on the force due to a test particle being either a point charge or a polarizable particle on the dielectric surface. The behaviour has been studied over a wide range of typical experimental parameters: tip-sample distance (1-20) nm, sample thickness (0-5) {mu}m and dielectric constant (1-20), using the numerical simulation of the equivalent charge method. For potential heterogeneities on metallic surfaces expressions are in agreement with the bibliography. The lateral resolution of samples having a dielectric constant of more than 10 tends to metallic behaviour. We found a characteristic thickness of 100 nm, above which the lateral resolution measured on the dielectric surface is close to that of an infinite medium. As previously reported, the lateral resolution is better in the gradient mode than in the force mode. Finally, we showed that for the same experimental conditions, the lateral resolution is better for a polarizable particle than for a charge, i.e. dielectric heterogeneities should always look 'sharper' (better resolved) than inhomogeneous charge distributions. This fact should be taken into account when interpreting images of heterogeneous samples.

  7. Dielectric studies of Graphene and Glass Fiber reinforced composites

    Science.gov (United States)

    Praveen, D.; Shashi Kumar, M. E.; Pramod, R.

    2018-02-01

    Graphene and E-glass fibres are one of the key materials used currently due to their unique chemical and mechanical properties. Lately graphene has attracted many researchers across academic fraternity as it can yield better properties with lesser reinforcement percentages. The current research emphasizes on the development of graphene-based nanocomposites and its investigation on dielectric applications. The composites were fabricated by adding graphene reinforcements from 1%-3% by weight using conventional Hand-lay process. A thorough investigation was carried out to determine the dielectric behaviour of the nano-composites using impedance analyser according to ASTM standards. The dielectric measurements were carried out in the temperature range of 300K to 400K in a step of 20K. The current research proposes the material for application in capacitor industry as the sample of 2.5% weight fraction showed highest value of K with 14 at 26.1 Hz and 403K.

  8. Dielectric and gravimetric studies of water binding to lysozyme

    International Nuclear Information System (INIS)

    Bone, S.

    1996-01-01

    Time domain dielectric spectroscopy and hydration isotherm measurements as a function of temperature have been applied to hydrated lysozyme powder. Two dielectric dispersions were identified, the first centred at approximately 8 MHz and a second above 1 GHz. The higher dispersion is considered to be the result of rotational relaxation of water molecules bound to the enzyme. In this case the results indicate the existence of a population of 32 water molecules per lysozyme molecule which are irrotationally bound to the lysozyme structure. A larger population of water molecules is relatively free to respond to the electric field and exhibits a dipole moment close to that of vapour phase water molecules. Multi-temperature hydration isotherm measurements are used to calculate enthalpies and entropies associated with the binding of water to lysozyme. Discontinuities both in dielectric and in thermodynamic characteristics in the range 10-14% hydration are interpreted as a re-ordering of the water structure on the enzyme surface

  9. Study of dielectric liquids at room temperature for high energy x ray Tomography

    International Nuclear Information System (INIS)

    Lepert, S.

    1989-09-01

    The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

  10. Gas Gun Studies of Interface Wear Effects

    Science.gov (United States)

    Jackson, Tyler; Kennedy, Greg; Thadhani, Naresh

    2011-06-01

    The characteristics of interface wear were studied by performing gas gun experiments at velocities up to 1 km/s. The approach involved developing coefficients of constitutive strength models for Al 6061 and OFHC-Cu, then using those to design die geometry for interface wear gas gun experiments. Taylor rod-on-anvil impact experiments were performed to obtain coefficients of the Johnson-Cook constitutive strength model by correlating experimentally obtained deformed states of impacted samples with those predicted using ANSYS AUTODYN hydrocode. Simulations were used with validated strength models to design geometry involving acceleration of Al rods through a copper concentric cylindrical angular extrusion die. Experiments were conducted using 7.62 mm and 80 mm diameter gas guns. Differences in the microstructure of the interface layer and microhardness values illustrate that stress-strain conditions produced during acceleration of Al through the hollow concentric copper die, at velocities less than 800 m/s, result in formation of a layer via solid state alloying due to severe plastic deformation, while higher velocities produce an interface layer consisting of melted and re-solidified aluminum.

  11. Thermal, FT–IR and dielectric studies of gel grown sodium oxalate ...

    Indian Academy of Sciences (India)

    WINTEC

    Institute of Diploma Studies, Nirma University of Science and Technology, Ahmedabad 384 481, India. MS received 29 ... dielectric response at various frequencies of applied field. ... 1987). Many oxalates exist in nature, for example, copper.

  12. Structural, dielectric and a.c. conductivity study of Sb2O3 thin film ...

    Indian Academy of Sciences (India)

    X-ray diffraction; a.c. conductivity; dielectric properties; complex electric modulus. ... the study disordered systems because of the unusual temper- ..... energy. tunnelling model suggested by Wang et al [31], (s) should decrease with increase in ...

  13. Study of electrical percolation phenomenon from the dielectric and ...

    Indian Academy of Sciences (India)

    pattern of real part of electric modulus (M′) at selected frequencies is similar to dielectric constant. The existence of .... charge carriers have sufficient time to orient in the direction ..... Aziz S B and Abidin Z H Z 2013 J. Soft Matter Article ID.

  14. Dielectric Relaxation Studies of Alkyl Methacrylate–Phenol Mixtures ...

    African Journals Online (AJOL)

    The Kirkwood correlation factor and the excess inverse relaxation time were determined and they yield information on the molecular interactions occurring in the systems. The values of the static permittivity and the relaxation time increase with an increase in the percentage of phenol in the mixtures. KEYWORDS: Dielectric ...

  15. Dielectric studies of molecular motions in glassy and liquid nicotine

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, K [Institute of Physics, Silesian University, ulica Uniwersytecka 4, 40-007 Katowice (Poland); Paluch, M [Institute of Physics, Silesian University, ulica Uniwersytecka 4, 40-007 Katowice (Poland); Ziolo, J [Institute of Physics, Silesian University, ulica Uniwersytecka 4, 40-007 Katowice (Poland); Ngai, K L [Naval Research Laboratory, Washington DC 20375-5320 (United States)

    2006-06-21

    The dielectric permittivity and loss spectra of glassy and liquid states of nicotine have been measured over the frequency range 10{sup -2}-10{sup 9} Hz. The relaxation spectra are similar to common small molecular glass-forming substances, showing the structural {alpha}-relaxation and its precursor, the Johari-Goldstein {beta}-relaxation. The {alpha}-relaxation is well described by the Fourier transform of the Kohlrausch-Williams-Watts stretched exponential function with an approximately constant stretch exponent that is equal to 0.70 as the glass transition temperature is approached. The dielectric {alpha}-relaxation time measured over 11 orders of magnitude cannot be described by a single Vogel-Fulcher-Tamman-Hesse equation. The most probable Johari-Goldstein {beta}-relaxation time determined from the dielectric spectra is in good agreement with the primitive relaxation time of the coupling model calculated from parameters of the structural {alpha}-relaxation. The shape of the dielectric spectra of nicotine is compared with that of other glass-formers having about the same stretch exponent, and they are shown to be nearly isomorphic. The results indicate that the molecular dynamics of nicotine conform to the general pattern found in other glass-formers, and the presence of the universal Johari-Goldstein secondary relaxation, which plays a role in the crystallization of amorphous pharmaceuticals.

  16. Study of dielectric properties of adulterated milk concentration and freshness

    Science.gov (United States)

    Jitendra Murthy, V.; Sai Kiranmai, N.; Kumar, Sanjeev

    2017-08-01

    The knowledge of dielectric properties may hold a potential to develop a new technique for quality evaluation of milk. The dielectric properties of water diluted cow’s milk with milk concentration from 70 percent to 100 percent stored during 36hour storage at 22°C and 144 hour at 5°C were measured at room temperature for frequencies ranging from 10 to 4500 MHz and at low, high & at microwave frequencies using X band bench and open-ended coaxial-line probe technology, along with electrical conductivity. The raw milk had the lowest dielectric constant (ɛ‧) when the frequency was higher than about 20M.Hz, and had the highest loss (ɛ″) or decepation factor tan (δ) at each frequency. The penetration depth (dp) increased with decreasing frequency, water content and storage time, which was large enough to detect dielectric properties changes in milk samples and provide large scale RF pasteurization processes. The loss factor can be an indicator in predicting milk concentration and freshness.

  17. Nonlinear optics at interfaces

    International Nuclear Information System (INIS)

    Chen, C.K.

    1980-12-01

    Two aspects of surface nonlinear optics are explored in this thesis. The first part is a theoretical and experimental study of nonlinear intraction of surface plasmons and bulk photons at metal-dielectric interfaces. The second part is a demonstration and study of surface enhanced second harmonic generation at rough metal surfaces. A general formulation for nonlinear interaction of surface plasmons at metal-dielectric interfaces is presented and applied to both second and third order nonlinear processes. Experimental results for coherent second and third harmonic generation by surface plasmons and surface coherent antiStokes Raman spectroscopy (CARS) are shown to be in good agreement with the theory

  18. Structural and dielectric studies on Ag doped nano ZnSnO3

    Science.gov (United States)

    Deepa, K.; Angel, S. Lilly; Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Undoped and Ag-doped nano Zinc Stannate (ZSO) ternary oxide were prepared by co-precipitation method. The crystallographic, morphological and optical properties of the synthesized nanoparticles were studied using X-ray diffraction (XRD) and UV-Visible spectroscopy (UV-Vis) and Scanning electron microscopy (SEM). The electrical properties of the synthesized samples were studied by dielectric measurements. Higher concentration Ag doped ZSO nanoparticles exhibit higher dielectric constant at low frequency.

  19. Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

    Science.gov (United States)

    Shi, Hualiang

    Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma

  20. Study of interfaces in organic semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Maheshwari, P; Dutta, D; Sudarshan, K; Sharma, S K; Pujari, P K; Samanta, S; Singh, A; Aswal, D K

    2011-01-01

    The defect structure at the organic heterojunctions is studied using slow positron beam. The structural and electronic properties of heterojunctions are of technological and fundamental importance for understanding and optimization of electronic processes in organic devices. Interface trap centres play a significant role in the electrical conduction through the junctions. Depth dependent Doppler broadened annihilation measurements have been carried out in p- and n-type organic semiconductor thin films (30-80 nm) both single as well as multilayers grown on quartz substrate. The objective of the present study is to investigate the defect structure and to understand the behavior of positrons at the charged organic interfaces. Our result shows the sensitivity of positrons to the interfacial disorders that may be a convoluted effect of the presence of defects as well as the influence of the charge dipole in multilayers.

  1. Dielectric spectroscopy studies of low-disorder and low-dimensional materials

    OpenAIRE

    Tripathi, Pragya

    2016-01-01

    In this thesis we employ dielectric spectroscopy (in different implementations) to study the dielectric properties of different materials ranging from completely disordered supercooled liquids to low-disorder solids with only ratcheting reorientational motions, to low-dimensional systems such as thin films or needle-like crystals. The probed material properties include the electrical conductivity, the space-charge processes due to sample heterogeneities, molecular dynamics, hydrogen-bond dyna...

  2. High-frequency dielectric study of proustite crystals Ag3AsS3

    Science.gov (United States)

    Bordovsky, V. A.; Gunia, N. Yu; Castro, R. A.

    2014-12-01

    The dielectric properties of the crystals proustite in the frequency of 106-109 Hz and a temperature range of 173 to 473 K were studied. The dispersion of the dielectric parameters indicates the existence of non-Debye relaxation mechanism correlates with structural changes in the phase transition region. The charge transfer is temperature activated with an activation energy of 2.40 ± 0.01 eV.

  3. Studies on dielectric properties of ferrocenylhydrazone coordinated polymers irradiated by γ-rays

    International Nuclear Information System (INIS)

    Lin Yun; Chen Jie; Lin Zhanru

    2007-01-01

    The three ferrocenylhydrazone coordinated metal polymers were synthesized (PZM). The effect of the 60 Co γ irradiation on microwave dielectric properties and their temperature-dielectric properties were studies. It has been found that the dielectric parameters (ε', tgδ) of coordinated polymers increase along with the absorbed doses and coordinated metals in order Cu, Co, Ni, However, the dependent curves of dielectric parameters on arise-down temperature are universal. On the other hand, the small changes in chemical structure before and after irradiation were confirmed by IR differential spectrometry and SEM. It is possible to make such coordinated polymers as a multifunctional polymeric material with optical, electric and magnetic properties, which may be potentially used in microwave communication. (authors)

  4. High pressure dielectric studies on the structural and orientational glass.

    Science.gov (United States)

    Kaminska, E; Tarnacka, M; Jurkiewicz, K; Kaminski, K; Paluch, M

    2016-02-07

    High pressure dielectric studies on the H-bonded liquid D-glucose and Orientationally Disordered Crystal (ODIC) 1,6-anhydro-D-glucose (levoglucosan) were carried out. It was shown that in both compounds, the structural relaxation is weakly sensitive to compression. It is well reflected in the low pressure coefficient of the glass transition and orientational glass transition temperatures which is equal to 60 K/GPa for both D-glucose and 1,6-anhydro-D-glucose. Although it should be noted that ∂Tg(0)/∂p evaluated for the latter compound seems to be enormously high with respect to other systems forming ODIC phase. We also found that the shape of the α-loss peak stays constant for the given relaxation time independently on the thermodynamic condition. Consequently, the Time Temperature Pressure (TTP) rule is satisfied. This experimental finding seems to be quite intriguing since the TTP rule was shown to work well in the van der Waals liquids, while in the strongly associating compounds, it is very often violated. We have also demonstrated that the sensitivity of the structural relaxation process to the temperature change measured by the steepness index (mp) drops with pressure. Interestingly, this change is much more significant in the case of D-glucose with respect to levoglucosan, where the fragility changes only slightly with compression. Finally, kinetics of ODIC-crystal phase transition was studied at high compression. It is worth mentioning that in the recent paper, Tombari and Johari [J. Chem. Phys. 142, 104501 (2015)] have shown that ODIC phase in 1,6-anhydro-D-glucose is stable in the wide range of temperatures and there is no tendency to form more ordered phase at ambient pressure. On the other hand, our isochronal measurements performed at varying thermodynamic conditions indicated unquestionably that the application of pressure favors solid (ODIC)-solid (crystal) transition in 1,6-anhydro-D-glucose. This result mimics the impact of pressure on the

  5. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

    Science.gov (United States)

    Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

    2018-01-01

    We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

  6. Study of water mass transfer dynamics in frescoes by dielectric spectroscopy

    International Nuclear Information System (INIS)

    Olmi, R.; Riminesi, C.

    2008-01-01

    The knowledge of moisture content (M C) is essential for determining the state of preservation of various types of hand-work: from building materials such as bricks and concrete, to objects of artistic value, in particular frescoes and mural paintings. In all above, moisture is the primary source of damages, as it affects the durability of porous materials. Dielectric properties of porous materials are strongly affected by the presence of water, suggesting dielectric spectroscopy as a suitable non-invasive diagnostic technique. The development of a quantitative relationship between M C and permittivity requires to investigate the dynamics of water mass transfer in porous media, and to determine its effect on the dielectric properties. In this paper a coupled mass transfer/dielectric problem is introduced and solved numerically, based on a finite element model. Results are compared to experimental dielectric measurements performed on plaster samples by the open coaxial method. The application of the dielectric technique to frescoes monitoring is proposed, showing the results obtained is an on-site study.

  7. First-Principles Study of Enhanced Magnetoelectric Effects at the Fe/MgO(001) Interface

    Science.gov (United States)

    Niranjan, M. K.; Jaswal, S. S.; Tsymbal, E. Y.; Duan, C.-G.

    2010-03-01

    The magnetoelectric effect allows affecting magnetic properties of materials by electric fields with potential for technological applications such as electrically controlled magnetic data storage. In this study we explore, using first-principles methods, the magnetoelectric effect at the Fe/MgO(001) interface^,1. By explicitly introducing an electric field in our density-functional calculations we demonstrate that the magnetic moment of Fe atoms at the interface changes linearly as a function of the applied electric field with the surface magnetoelectric coefficient being strongly enhanced as compared to that for the clean Fe(001) surface.^1 The effect originates from the increased screening charge associated with a large dielectric constant of MgO. The influence of electric field on relative occupancy of the Fe-3d orbitals leads to significant change in the surface magnetocrystalline anisotropy. These results are compared with the available experimental work.^2 Our results indicate that using high-k dielectrics at the interface with ferromagnetic metals may be very effective in controlling the magnetic properties by electric fields thereby leading to interesting device applications. ^1 C.-G. Duan et al., Phys. Rev. Lett. 101, 137201 (2008). ^2 T. Maruyama et al., Nat. Nanotech., 4, 158 (2009).

  8. Dielectric track detectors and their applications in boron studies

    International Nuclear Information System (INIS)

    Mysak, F.; Krejci, M.

    1982-01-01

    Examples are presented of the applications of autoradiography using plastic films in the study of the distribution of boron in metal materials and its translocation owing to diffusion annealing. Alpha radiation is induced in the material by thermal neutrons while the reaction 10 B(n,α) 7 Li is used. Diffusion processes were studied in the transition zone between the base material and the overlay in hard alloy surfacing. The metallographically treated samples were placed on cellulose nitrate films and irradiated in a reactor. Autoradiograms showed that up to an annealing temperature of 800 degC there was no notable diffusion. Only at 900 degC migration occurred of boron from the transition zone to the base material. Also studied was the distribution of boron in soldered joints of nickel heat resisting alloys. The joints were subjected to homogenization annealing and the gradual disintegration was monitored of boride phases in dependence on the temperature and duration of annealing. Inside the joint boron practically disappeared and it finally appeared in the base material outside of the initial interface. (M.D.)

  9. Experimental Study on High Electrical Breakdown of Water Dielectric

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2005-01-01

    By means of a coaxial apparatus, pressurized water breakdown experiments with microsecond charging have been carried out with different surface roughness of electrodes and different ethylene glycol concentrations of ethylene glycol/water mixture. The experimental results about the breakdown stress and the effective time are presented. The breakdown stress is normalized to the situation that the effective time is transformed to 1 μs and analyzed. The conclusions are as follows: (1) the breakdown stress formula is modified to E = 0.561M A -1/10 t eff -1/N P 1/8 ; (2) the coefficient M is significantly increased by surface polishing and ethylene glycol additive; (3) it is accumulative for the capacity of improving electrical breakdown strength for surface polishing, ethylene glycol additive, and pressurization, of which pressurization is the most effective method; (4) the highest stress of 235.5 kV/cm is observed in ethylene glycol/water mixture with an ethylene glycol concentration of 80% at a hydrostatic pressure of 1215.9 kPa and is about one time greater than that in pure water at constant pressure; (5) for pressurization and surface polishing, the primary mechanism to improve the breakdown strength of water dielectric is the increase in the breakdown time delay. Research results indicate great potential in the application of the high power pulse conditioning system of water dielectric

  10. Study on chitosan film properties as a green dielectric

    Science.gov (United States)

    Nainggolan, I.; Nasution, T. I.; Putri, S. R. E.; Azdena, D.; Balyan, M.; Agusnar, H.

    2018-02-01

    Chitosan film dielectrics to produce an electrostatic capacitor were prepared by the solution cast technique. The charging and discharging of the capacitor were done using RC series circuit with DC voltage supply because chitosan has bipolar properties. First testing was by varying supply voltage of 1, 3, 5, 10 and 15 V, respectively, and could be determined that the most effective voltage for chitosan film can be well polarised is 5 V. The results of second testing for the use of 5 V supply showed that the capacitance of a chitosan film capacitor decreased with the increase in load value. For loads of 100, 1K, 10K, 100K and 1M Ω, the capacitance values of the chitosan film capacitor were 3.1725, 0.4136, 0.05379, 0.007917 and 0.001522 F, respectively. It was also found that the increase in voltage of the capacitor at charging process was faster for the lower load. Therefore, the research result has corresponded to the general formula that used to calculate the capacitance value and thus, the biopolymer chitosan has potential as a sustainable green dielectric.

  11. Interface study of fiber reinforced concrete

    Directory of Open Access Journals (Sweden)

    Pacios, A.

    1997-12-01

    Full Text Available In a composite material that uses fibers as reinforcement, the breakage of the matrix is produced jointly with the separation of the fiber from the matrix. The mechanical behavior of the interface describes how fibers can work stabilizing the cracking process. The interface is the medium that puts the fiber on load, being the mechanical behavior of the interface and the strength of the fiber two important parameters to consider to characterize the general behavior of the composite. The present work studies the effect of several parameters on the behavior of the interface. Those parameters are the type of fiber, its geometry and dimension and the modified matrix and loading rate. An experimental technique was designed to allow testing the same set-up for pull-out tests in a quasistatic machine and Charpy pendulum. Modifications of the matrix by adding a mineral admixture improve the behavior of the interface as much as a 100%. It has been observed that combining the two actions, an improved matrix with crimped fibers, the type of failure can be modified. In this new type of failure, the fiber breaks consequently toughness decreases. Other parameters, as the loading rate and inclination of the fiber also affect the behavior of the interface.

    En un material compuesto que utiliza fibras como refuerzo, la rotura de la matriz se produce conjuntamente con la separación de la fibra de la matriz, por lo que el comportamiento mecánico de la interfase describe hasta que punto las fibras pueden trabajar como estabilizadores en el proceso defisuración. La interfase es el medio que pone en carga a la fibra y, por ello, la resistencia mecánica de la interfase y de la fibra son dos parámetros importantes a considerar para caracterizar el comportamiento general del composite. Este trabajo investiga el efecto de la variación del tipo de fibra, geometría y dimensión de las mismas y las modificaciones de la matriz y la velocidad de desplazamiento

  12. Dielectric relaxation studies of some primary alcohols and their mixture with water

    International Nuclear Information System (INIS)

    Ahmad, S.S.; Yaqub, M.

    2003-01-01

    The complex dielectric constant of ethyl alcohol, methyl alcohol and 1- propanol and their mixtures with water of different concentration, (0 to 100% by weight) at the temperature of 303K has been evaluated, within the frequency range of (100KHz- 100 MHz). Moreover, the viscosity mu of each alcohol and its mixture with water have been measured at this temperature. The dielectric properties have been evaluated by Hartshorn and Ward apparatus. The purpose of this work is to study the influence of aliphatic group, size and shape on the extent of hydrogen bonding and also to obtain the thermodynamic data on hydrogen bond formation in the pure liquid state and its mixture. The width of the semicircle plot determines the distribution of average relaxation time. Dielectric relaxation time in pure alcohols and their water mixture has been calculated from the respected Cole-Cole plot and dielectric data. A single relaxation time of 117.16ps has been obtained for the molecules of pure methanol, whereas, the dielectric data of prophyl alcohol which indicates the viscosity water have been measured at the temperature 303 K. The dielectric properties in distribution of relaxation time, which is in good agreement with the Davidson-cole representation. The molecules in liquid mixture within frequency range, the mixture has more than one relaxation item, leading to the shortening of main relaxation time as compared with the pure alcohol and broadening of the complex permitivity spectra. The dependence of the dielectric relaxation on composition shows a remarkable behavior. Results are discussed in the light of H-bonded molecules. (author)

  13. A Comprehensive Study on Dielectric Properties of Volcanic Rock/PANI Composites

    Science.gov (United States)

    Kiliç, M.; Karabul, Y.; Okutan, M.; İçelli, O.

    2016-05-01

    Basalt is a very well-known volcanic rock that is dark colored and relatively rich in iron and magnesium, almost located each country in the world. These rocks have been used in the refused rock industry, to produce building tiles, construction industrial, highway engineering. Powders and fibers of basalt rocks are widely used of radiation shielding, thermal stability, heat and sound insulation. This study examined three different basalt samples (coded CM-1, KYZ-13 and KYZ-24) collected from different regions of Van province in Turkey. Polyaniline (PANI) is one of the representative conductive polymers due to its fine environmental stability, huge electrical conductivity, as well as a comparatively low cost. Also, the electrical and thermal properties of polymer composites containing PANI have been widely studied. The dielectric properties of Basalt/Polyaniline composites in different concentrations (10, 25, 50 wt.% PANI) have been investigated by dielectric spectroscopy method at the room temperature. The dielectric parameters (dielectric constants, loss and strength) were measured in the frequency range of 102 Hz-106 Hz at room temperature. The electrical mechanism change with PANI dopant. A detailed dielectrically analysis of these composites will be presented.

  14. Study of dielectric relaxation and AC conductivity of InP:S single crystal

    Science.gov (United States)

    El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

    2012-07-01

    The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

  15. Numerical study on characteristic of two-dimensional metal/dielectric photonic crystals

    Science.gov (United States)

    Zong, Yi-Xin; Xia, Jian-Bai; Wu, Hai-Bin

    2017-04-01

    An improved plan-wave expansion method is adopted to theoretically study the photonic band diagrams of two-dimensional (2D) metal/dielectric photonic crystals. Based on the photonic band structures, the dependence of flat bands and photonic bandgaps on two parameters (dielectric constant and filling factor) are investigated for two types of 2D metal/dielectric (M/D) photonic crystals, hole and cylinder photonic crystals. The simulation results show that band structures are affected greatly by these two parameters. Flat bands and bandgaps can be easily obtained by tuning these parameters and the bandgap width may reach to the maximum at certain parameters. It is worth noting that the hole-type photonic crystals show more bandgaps than the corresponding cylinder ones, and the frequency ranges of bandgaps also depend strongly on these parameters. Besides, the photonic crystals containing metallic medium can obtain more modulation of photonic bands, band gaps, and large effective refractive index, etc. than the dielectric/dielectric ones. According to the numerical results, the needs of optical devices for flat bands and bandgaps can be met by selecting the suitable geometry and material parameters. Project supported by the National Basic Research Program of China (Grant No. 2011CB922200) and the National Natural Science Foundation of China (Grant No. 605210010).

  16. Numerical study on characteristic of two-dimensional metal/dielectric photonic crystals

    International Nuclear Information System (INIS)

    Zong Yi-Xin; Xia Jian-Bai; Wu Hai-Bin

    2017-01-01

    An improved plan-wave expansion method is adopted to theoretically study the photonic band diagrams of two-dimensional (2D) metal/dielectric photonic crystals. Based on the photonic band structures, the dependence of flat bands and photonic bandgaps on two parameters (dielectric constant and filling factor) are investigated for two types of 2D metal/dielectric (M/D) photonic crystals, hole and cylinder photonic crystals. The simulation results show that band structures are affected greatly by these two parameters. Flat bands and bandgaps can be easily obtained by tuning these parameters and the bandgap width may reach to the maximum at certain parameters. It is worth noting that the hole-type photonic crystals show more bandgaps than the corresponding cylinder ones, and the frequency ranges of bandgaps also depend strongly on these parameters. Besides, the photonic crystals containing metallic medium can obtain more modulation of photonic bands, band gaps, and large effective refractive index, etc. than the dielectric/dielectric ones. According to the numerical results, the needs of optical devices for flat bands and bandgaps can be met by selecting the suitable geometry and material parameters. (paper)

  17. Transport and dielectric studies on silver based molybdo-tungstate quaternary superionic conducting glasses

    International Nuclear Information System (INIS)

    Prasad, P.S.S.; Radhakrishna, S.

    1988-01-01

    The molybdo-tungstate (MoO 3 -WO 3 ) combination of glass formers with silver oxide (Ag 2 O) as glass modifier and silver iodide (AgI) as ionic conductor were prepared to study the transport and dielectric properties of 60% AgI-40% (x Ag 2 O-y(WO 3 -MoO 3 )) for x/y=0.33 to 3.0 and establish the feasibility of using these glasses as electrolytes in the fabrication and characterisation of solid state batteries and potential memory devices. The details of the preparation of glasses and methods of measurement of their capacitance, dielectric loss factor and ac conductivity in the frequency range 100 Hz - 100 kHz from 30-120 C have been reported. The electronic contribution to the total conductivity, the ionic and electronic transport numbers were determined using Wagners dc polarisation technique. The observed high ionic and low electronic conductivities were attributed to the formation of ionic clusters in the glass and the effect of mixing two glass formers. The observed total ionic conductivity and its temperature dependence was explained using Arrhenius relation σ=σ 0 /T exp(-E/RT) and the measured dielectric constant and dielectric loss were explained on the basis of Jonschers theory. The frequency dependence of dielectric constant obeys the theory based on the polarisation of ions. 25 refs.; 8 figs

  18. High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

    Science.gov (United States)

    Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

    2018-01-01

    In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

  19. Differential Thermal Analysis and Dielectric Studies on 2-Methyl-2-Nitro-Propane under High Pressure

    Science.gov (United States)

    Büsing, D.; Jenau, M.; Reuter, J.; Würflinger, A.; Tamarit, J. Li.

    1995-05-01

    Differential thermal analysis and dielectric studies under pressures up to 300 MPa and temperatures of about 200 to 350 K have been performed on 2-methyl-2-nitro-propane (TBN). TBN displays an orientationally disordered phase (ODIC), solid I, and two non-plastic phases, solids II and III. The coexistence region of the plastic phase I increases with increasing pressure, whereas the low-temperature phase II apparently vanishes at a triple point I, II, III, above 300 MPa. The static permittivity increases on freezing, characterizing the solid I as an ODIC phase. In the frame of the Kirkwood-Onsager-Fröhlich theory the g-factor is about unity, discounting specific dielectric correlations. The dielectric behaviour of TBN is similar to previously studied related compounds, such as 2-chloro-2-methyl-propane or 2-brome- 2-methyl-propane

  20. Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study

    Directory of Open Access Journals (Sweden)

    Md. Shamim Sarker

    Full Text Available This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF ratio and subthreshold slope of the device using Non Equilibrium Greens Function (NEGF formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson’s equation self-consistently in NanoTCADViDES environment and found that the ON state performance of CNT MOSFET and CNT TFET have significant dependency on the dielectric strength of the gate oxide materials. The figure of merits of the devices also demonstrates that the CNT TFET is promising for high-speed and low-power logic applications. Keywords: CNT TFET, Subthreshold slop, Barrier width, Conduction band (C.B and Valance band (V.B, Oxide dielectric strength, Tight binding approach

  1. Dielectric and electrical study of PPy doped PVA-PVP films

    Science.gov (United States)

    Jha, Sushma; Tripathi, Deepti

    2018-05-01

    Dielectric parameters of free standing films of pure PVA (PolyvinylAlcohol) and PVA with varying concentrations of PVP(Polyvinylpyrrolidone) and Polypyrrole were prepared and studied in low frequency range (100Hz - 2MHz). The results show that dielectric constant, loss tangent and conductivity increase sharply on increasing the concentration of PVP above 50wt% in polymer matrix. PVA-PVP film with low concentration of PPy showed improvement in the values of complex permittivity, loss tangent and ac conductivity within the experimental frequency range. This eco - friendly polymeric material will be studied for its probable application for RFI/EMI shielding, biosensors, capacitors & insulation purposes.

  2. Temperature-dependent dielectric function of germanium in the UV–vis spectral range: A first-principles study

    International Nuclear Information System (INIS)

    Yang, J.Y.; Liu, L.H.; Tan, J.Y.

    2014-01-01

    The study of temperature dependence of thermophysical parameter dielectric function is key to understanding thermal radiative transfer in high-temperature environments. Limited by self-radiation and thermal oxidation, however, it is difficult to directly measure the high-temperature dielectric function of solids with present experimental technologies. In this work, we implement two first-principles methods, the ab initio molecular dynamics (AIMD) and density functional perturbation theory (DFPT), to study the temperature dependence of dielectric function of germanium (Ge) in the UV–vis spectral range in order to provide data of high-temperature dielectric function for radiative transfer study in high-temperature environments. Both the two methods successfully predict the temperature dependence of dielectric function of Ge. Moreover, the good agreement between the calculated results of the AIMD approach and experimental data at 825 K enables us to predict the high-temperature dielectric function of Ge with the AIMD method in the UV–vis spectral range. - Highlights: • The temperature dependence of dielectric function of germanium (Ge) is investigated with two first-principles methods. • The temperature effect on dielectric function of Ge is discussed. • The high-temperature dielectric function of Ge is predicted

  3. Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

    International Nuclear Information System (INIS)

    Ramesh, S.; Chai, M.F.

    2007-01-01

    Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt in the polymer electrolyte complexes

  4. Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh, S. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)]. E-mail: ramesh@mail.utar.edu.my; Chai, M.F. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)

    2007-05-15

    Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt in the polymer electrolyte complexes.

  5. Dielectric and electro-optical parameters of two ferroelectric liquid crystals: a comparative study

    International Nuclear Information System (INIS)

    Kumar Misra, Abhishek; Kumar Srivastava, Abhishek; Shukla, J P; Manohar, Rajiv

    2008-01-01

    Dielectric relaxation and an electro-optical study of two ferroelectric liquid crystals having different spontaneous polarizations (Felix 16/100 and Felix 17/000) showing SmC* and SmA phases have been performed in the temperature range 30-80 compfn C. The experimental data have been used to determine different relaxation parameters, viz. distribution parameter, relaxation frequency, dielectric strength and rotational viscosity. The Goldstone mode of dielectric permittivity has been well observed for both the samples under investigation. The activation energy of both the samples has also been determined by the best theoretical fitting of the Arrhenius plot. We have also evaluated the optical response time and anchoring energy coefficients from electro-optical measurement techniques for these samples.

  6. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  7. Microwave dielectric study of polar liquids at 298 K

    Science.gov (United States)

    Maharolkar, Aruna P.; Murugkar, A.; Khirade, P. W.

    2018-05-01

    Present paper deals with study of microwave dielectric properties like dielectric constant, viscosity, density and refractive index for the binary mixtures of Dimethylsulphoxide (DMSO) and Methanol over the entire concentration range were measured at 298K. The experimental data further used to determine the excess properties viz. excess static dielectric constant, excess molar volume, excess viscosity& derived properties viz. molar refraction&Bruggman factor. The values of excess properties further fitted with Redlich-Kister (R-K Fit) equation to calculate the binary coefficients and standard deviation. The resulting excess parameters are used to indicate the presence of intermolecular interactions and strength of intermolecular interactions between the molecules in the binary mixtures. Excess parameters indicate structure breaking factor in the mixture predominates in the system.

  8. The Pr 2O 3/Si(0 0 1) interface studied by synchrotron radiation photo-electron spectroscopy

    Science.gov (United States)

    Schmeißer, D.; Müssig, H.-J.

    2003-10-01

    Pr 2O 3 is currently under consideration as a potential replacement for SiO 2 as the gate-dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. We studied the Pr 2O 3/Si(0 0 1) interface by a non-destructive depth profiling using synchrotron radiation photoelectron spectroscopy. Our data suggests that there is no silicide formation at the interface. Based on reported results, a chemical reactive interface exists, consisting of a mixed Si-Pr oxide such as (Pr 2O 3) x(SiO 2) 1- x, i.e. as a silicate phase with variable silicon content. This pseudo-binary alloy at the interface offers large flexibility toward successful integration of Pr 2O 3 into future CMOS technologies.

  9. Dielectric loss against piezoelectric power harvesting

    International Nuclear Information System (INIS)

    Liang, Junrui; Shu-Hung Chung, Henry; Liao, Wei-Hsin

    2014-01-01

    Piezoelectricity is one of the most popular electromechanical transduction mechanisms for constructing kinetic energy harvesting systems. When a standard energy harvesting (SEH) interface circuit, i.e., bridge rectifier plus filter capacitor, is utilized for collecting piezoelectric power, the previous literature showed that the power conversion can be well predicted without much consideration for the effect of dielectric loss. Yet, as the conversion power gets higher by adopting power-boosting interface circuits, such as synchronized switch harvesting on inductor (SSHI), the neglect of dielectric loss might give rise to deviation in harvested power estimation. Given the continuous progress on power-boosting interface circuits, the role of dielectric loss in practical piezoelectric energy harvesting (PEH) systems should receive attention with better evaluation. Based on the integrated equivalent impedance network model, this fast track communication provides a comprehensive study on the susceptibility of harvested power in PEH systems under different conditions. It shows that, dielectric loss always counteracts piezoelectric power harvesting by causing charge leakage across piezoelectric capacitance. In particular, taking corresponding ideal lossless cases as references, the counteractive effect might be aggravated under one of the five conditions: larger dielectric loss tangent, lower vibration frequency, further away from resonance, weaker electromechanical coupling, or using power-boosting interface circuit. These relationships are valuable for the study of PEH systems, as they not only help explain the role of dielectric loss in piezoelectric power harvesting, but also add complementary insights for material, structure, excitation, and circuit considerations towards holistic evaluation and design for practical PEH systems. (fast track communications)

  10. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

    Science.gov (United States)

    Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

    2017-03-29

    A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

  11. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    Science.gov (United States)

    Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

    2007-09-01

    Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

  12. Atomization of bismuthane in a dielectric barrier discharge: A mechanistic study

    Czech Academy of Sciences Publication Activity Database

    Kratzer, Jan; Zelina, Ondřej; Svoboda, Milan; Sturgeon, R. E.; Mester, Z.; Dědina, Jiří

    2016-01-01

    Roč. 88, č. 3 (2016), s. 1804-1811 ISSN 0003-2700 R&D Projects: GA ČR GA14-23532S Grant - others:GA AV ČR(CZ) M200311202 Institutional support: RVO:68081715 Keywords : dielectric barrier discharge * hydride generation * mechanistic study Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 6.320, year: 2016

  13. Oscillatory shear and high-pressure dielectric study of 5-methyl-3-heptanol

    DEFF Research Database (Denmark)

    Hecksher, Tina; Jakobsen, Bo; Dyre, J. C.

    2014-01-01

    The monohydroxy alcohol 5-methyl-3-heptanol is studied using rheology at ambient pressure and using dielectric spectroscopy at elevated pressures up to 1.03 GPa. Both experimental techniques reveal that the relaxational behavior of this liquid is intermediate between those that show a large Debye...

  14. Atomization of bismuthane in a dielectric barrier discharge: A mechanistic study

    Czech Academy of Sciences Publication Activity Database

    Kratzer, Jan; Zelina, Ondřej; Svoboda, Milan; Sturgeon, R. E.; Mester, Z.; Dědina, Jiří

    2016-01-01

    Roč. 88, č. 3 (2016), s. 1804-1811 ISSN 0003-2700 R&D Projects: GA ČR GA14-23532S Grant - others:GA AV ČR(CZ) M200311202 Institutional support: RVO:68081715 Keywords : dielectric barrier discharge * hydride generation * mechanistic study Subject RIV: CB - Analytical Chemistry , Separation Impact factor: 6.320, year: 2016

  15. NUMERICAL STUDY OF ELECTROMAGNETIC WAVES GENERATED BY A PROTOTYPE DIELECTRIC LOGGING TOOL

    Science.gov (United States)

    To understand the electromagnetic waves generated by a prototype dielectric logging tool, a numerical study was conducted using both the finite-difference, time-domain method and a frequency- wavenumber method. When the propagation velocity in the borehole was greater than th...

  16. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  17. Surface and Interface Studies with Radioactive Ions

    CERN Multimedia

    Weber, A

    2002-01-01

    Investigations on the atomic scale of magnetic surfaces and magnetic multilayers were performed by Perturbed Angular Correlation (PAC) spectroscopy. The unique combination of the Booster ISOLDE facility equipped with a UHV beamline and the UHV chamber ASPIC (Apparatus for Surface Physics and Interfaces at CERN) is ideally suited for such microscopic studies. Main advantages are the choice of problem-oriented radioactive probes and the purity of mass-separated beams. The following results were obtained: $\\,$i) Magnetic hyperfine fields (B$_{hf}$) of Se on Fe, Co, Ni surfaces were determined. The results prompted a theoretical study on the B$_{hf}$ values of the 4sp-elements in adatom position on Ni and Fe, confirming our results and predicting unexpected behaviour for the other elements. $\\,$ii) Exemplarily we have determined B$_{hf}$ values of $^{111}$Cd at many different adsorption sites on Ni surfaces. We found a strong dependence on the coordination number of the probes. With decreasing coordination nu...

  18. Study of the dielectric properties of barium titanate-polymer composites

    Energy Technology Data Exchange (ETDEWEB)

    Pant, H.C. [R and D Laboratory, Defence Laboratory, Camouflage Division, Defence Laboratory Ratanada Palace, Jodhpur 342011, Rajasthan (India); Patra, M.K. [R and D Laboratory, Defence Laboratory, Camouflage Division, Defence Laboratory Ratanada Palace, Jodhpur 342011, Rajasthan (India); Verma, Aditya [R and D Laboratory, Defence Laboratory, Camouflage Division, Defence Laboratory Ratanada Palace, Jodhpur 342011, Rajasthan (India); Vadera, S.R. [R and D Laboratory, Defence Laboratory, Camouflage Division, Defence Laboratory Ratanada Palace, Jodhpur 342011, Rajasthan (India); Kumar, N. [R and D Laboratory, Defence Laboratory, Camouflage Division, Defence Laboratory Ratanada Palace, Jodhpur 342011, Rajasthan (India)]. E-mail: nkjainjd@yahoo.com

    2006-07-15

    A comparative study of complex dielectric properties has been carried out at the X-band of microwave frequencies of composites of barium titanate (BaTiO{sub 3}) with two different polymer matrices: insulating polyaniline (PANI) powder (emeraldine base) and maleic resin. From these studies, it is observed that the composites of BaTiO{sub 3} with maleic resin show normal composite behavior and the dielectric constant follows the asymmetric Bruggeman model. In contrast, the composites of BaTiO{sub 3} with PANI show an unusual behavior wherein even at a low concentration of PANI (5 wt.%) there is a drastic reduction in the dielectric constant of BaTiO{sub 3}. This behavior of the dielectric constant is explained on the basis of coating of BaTiO{sub 3} particles by PANI which in turn is attributed to the highly surface adsorbing character. The materials have also been characterized using Fourier transform infrared spectroscopy, powder X-ray diffraction, scanning electron microscopy and optical microscopy studies.

  19. Study of the dielectric properties of barium titanate-polymer composites

    International Nuclear Information System (INIS)

    Pant, H.C.; Patra, M.K.; Verma, Aditya; Vadera, S.R.; Kumar, N.

    2006-01-01

    A comparative study of complex dielectric properties has been carried out at the X-band of microwave frequencies of composites of barium titanate (BaTiO 3 ) with two different polymer matrices: insulating polyaniline (PANI) powder (emeraldine base) and maleic resin. From these studies, it is observed that the composites of BaTiO 3 with maleic resin show normal composite behavior and the dielectric constant follows the asymmetric Bruggeman model. In contrast, the composites of BaTiO 3 with PANI show an unusual behavior wherein even at a low concentration of PANI (5 wt.%) there is a drastic reduction in the dielectric constant of BaTiO 3 . This behavior of the dielectric constant is explained on the basis of coating of BaTiO 3 particles by PANI which in turn is attributed to the highly surface adsorbing character. The materials have also been characterized using Fourier transform infrared spectroscopy, powder X-ray diffraction, scanning electron microscopy and optical microscopy studies

  20. Dielectric and complex impedance studies of BaTi0·85W0·15O3+δ ...

    Indian Academy of Sciences (India)

    Keywords. Ferroelectrics; grain boundaries; dielectric response; X-ray diffraction. 1. Introduction. Since the discovery of BaTiO3, these materials have been extensively studied owing to their interesting dielectric, ferroelectric, piezoelectric and pyroelectric properties. (Goodman and Buchanan 1986; Hench and West 1990;.

  1. Reliability of in vivo measurements of the dielectric properties of anisotropic tissue: a simulative study

    International Nuclear Information System (INIS)

    Huo Xuyang; Shi Xuetao; You Fusheng; Fu Feng; Liu Ruigang; Tang Chi; Dong Xiuzhen; Lu Qiang

    2013-01-01

    A simulative study was performed to measure the dielectric properties of anisotropic tissue using several in vivo and in vitro probes. COMSOL Multiphysics was selected to carry out the simulation. Five traditional probes and a newly designed probe were used in this study. One of these probes was an in vitro measurement probe and the other five were in vivo. The simulations were performed in terms of the minimal tissue volume for in vivo measurements, the calibration of a probe constant, the measurement performed on isotropic tissue and the measurement performed on anisotropic tissue. Results showed that the in vitro probe can be used to measure the in-cell dielectric properties of isotropic and anisotropic tissues. When measured with the five in vivo probes, the dielectric properties of isotropic tissue were all measured accurately. For the measurements performed on anisotropic tissue, large errors were observed when the four traditional in vivo probes were used, but only a small error was observed when the new in vivo probe was used. This newly designed five-electrode in vivo probe may indicate the dielectric properties of anisotropic tissue more accurately than these four traditional in vivo probes. (paper)

  2. Static dielectric constant of water within a bilayer using recent water models: a molecular dynamics study

    Science.gov (United States)

    Meneses-Juárez, Efrain; Rivas-Silva, Juan Francisco; González-Melchor, Minerva

    2018-05-01

    The water confined within a surfactant bilayer is studied using different water models via molecular dynamics simulations. We considered four representative rigid models of water: the SPC/E and the TIP4P/2005, which are commonly used in numerical calculations and the more recent TIP4Q and SPC/ε models, developed to reproduce the dielectric behaviour of pure water. The static dielectric constant of the confined water was analyzed as a function of the temperature for the four models. In all cases it decreases as the temperature increases. Additionally, the static dielectric constant of the bilayer-water system was estimated through its expression in terms of the fluctuations in the total dipole moment, usually applied for isotropic systems. The estimated dielectric was compared with the available experimental data. We found that the TIP4Q and the SPC/ε produce closer values to the experimental data than the other models, particularly at room temperature. It was found that the probability of finding the sodium ion close to the head of the surfactant decreases as the temperature increases, thus the head of the surfactant is more exposed to the interaction with water when the temperature is higher.

  3. Structural, photoconductivity, and dielectric studies of polythiophene-tin oxide nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Murugavel, S., E-mail: starin85@gmail.com; Malathi, M., E-mail: mmalathi@vit.ac.in

    2016-09-15

    Highlights: • Synthesis of polythiophene-tin oxide nanocomposites confirmed by FTIR and EDAX. • SEM shows SnO{sub 2} nanoparticles embedded within polythiophene matrix. • Stability and isoelectric point suggest nanoparticle–matrix interaction. • High dielectric constant due to high Maxwell–Wagner interfacial polarization. - Abstract: Polythiophene-tinoxide (PT-SnO{sub 2}) nanocomposites were prepared by in situ chemical oxidative polymerization, in the presence of various concentrations of SnO{sub 2} nanoparticles. Samples were characterized by X-ray diffraction, Fourier-transform infrared spectroscopy, thermogravimetric analysis, X-ray photoelectron spectroscopy and Zeta potential measurements. Morphologies and elemental compositions were investigated by transmission electron microscopy, field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy. The photoconductivity of the nanocomposites was studied by field-dependent dark and photo conductivity measurements. Their dielectric properties were investigated using dielectric spectroscopy, in the frequency range of 1kHz–1 MHz. The results indicated that the SnO{sub 2} nanoparticles in the PT-SnO{sub 2} nanocomposite were responsible for its enhanced dielectric performance.

  4. X-ray scattering studies of surfaces and interfaces

    International Nuclear Information System (INIS)

    Sanyal, M.K.

    1998-01-01

    Here we shall briefly review the basics and some applications of x-ray specular reflectivity and diffuse scattering techniques. These x-ray scattering techniques are uniquely suited to study of the structure of surfaces and interfaces at atomic resolutions as they are nondestructive and can probe even interfaces which are buried. The study of structure of surfaces and interfaces is not only required in understanding physics in reduced dimensions but is also essential in developing technologically important materials

  5. Changes in the dielectric properties of medaka fish embryos during development, studied by electrorotation

    Energy Technology Data Exchange (ETDEWEB)

    Shirakashi, Ryo, E-mail: aa21150@iis.u-tokyo.ac.jp [Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan); Mischke, Miriam [Lehrstuhl fuer Biotechnologie und Biophysik, Biozentrum, Universitaet Wuerzburg, Wuerzburg (Germany); Fischer, Peter [Physiologische Chemie, Biozentrum, Universitaet Wuerzburg, Wuerzburg (Germany); Memmel, Simon [Lehrstuhl fuer Biotechnologie und Biophysik, Biozentrum, Universitaet Wuerzburg, Wuerzburg (Germany); Krohne, Georg [Abteilung fuer Elektronenmikroskopie, Biozentrum, Universitaet Wuerzburg, Wuerzburg (Germany); Fuhr, Guenter R. [Lehrstuhl fuer Biotechnologie und Medizintechnik, Universitaet des Saarlandes, Saarbruecken (Germany); Zimmermann, Heiko [Lehrstuhl fuer Molekulare und Zellulaere Biotechnologie, Universitaet des Saarlandes, Saarbruecken (Germany); Sukhorukov, Vladimir L., E-mail: sukhorukov@biozentrum.uni-wuerzburg.de [Lehrstuhl fuer Biotechnologie und Biophysik, Biozentrum, Universitaet Wuerzburg, Wuerzburg (Germany)

    2012-11-09

    Highlights: Black-Right-Pointing-Pointer Electrorotation offers a non-invasive tool for dielectric analysis of fish embryos. Black-Right-Pointing-Pointer The three-shell dielectric model matches the rotation spectra of medaka eggs. Black-Right-Pointing-Pointer The capacitance value suggests a double-membrane structure of yolk envelope. -- Abstract: The Japanese medaka fish, Oryzias latipes, has become a powerful vertebrate model organism in developmental biology and genetics. The present study explores the dielectric properties of medaka embryos during pre-hatching development by means of the electrorotation (ROT) technique. Due to their layered structure, medaka eggs exhibited up to three ROT peaks in the kHz-MHz frequency range. During development from blastula to early somite stage, ROT spectra varied only slightly. But as the embryo progressed to the late-somite stage, the ROT peaks underwent significant changes in frequency and amplitude. Using morphological data obtained by light and electron microscopy, we analyzed the ROT spectra with a three-shell dielectric model that accounted for the major embryonic compartments. The analysis yielded a very high value for the ionic conductivity of the egg shell (chorion), which was confirmed by independent osmotic experiments. A relatively low capacitance of the yolk envelope was consistent with its double-membrane structure revealed by transmission electron microscopy. Yolk-free dead eggs exhibited only one co-field ROT peak, shifted markedly to lower frequencies with respect to the corresponding peak of live embryos. The dielectric data may be useful for monitoring the development and changes in fish embryos' viability/conditions in basic research and industrial aquaculture.

  6. Changes in the dielectric properties of medaka fish embryos during development, studied by electrorotation

    International Nuclear Information System (INIS)

    Shirakashi, Ryo; Mischke, Miriam; Fischer, Peter; Memmel, Simon; Krohne, Georg; Fuhr, Günter R.; Zimmermann, Heiko; Sukhorukov, Vladimir L.

    2012-01-01

    Highlights: ► Electrorotation offers a non-invasive tool for dielectric analysis of fish embryos. ► The three-shell dielectric model matches the rotation spectra of medaka eggs. ► The capacitance value suggests a double-membrane structure of yolk envelope. -- Abstract: The Japanese medaka fish, Oryzias latipes, has become a powerful vertebrate model organism in developmental biology and genetics. The present study explores the dielectric properties of medaka embryos during pre-hatching development by means of the electrorotation (ROT) technique. Due to their layered structure, medaka eggs exhibited up to three ROT peaks in the kHz–MHz frequency range. During development from blastula to early somite stage, ROT spectra varied only slightly. But as the embryo progressed to the late-somite stage, the ROT peaks underwent significant changes in frequency and amplitude. Using morphological data obtained by light and electron microscopy, we analyzed the ROT spectra with a three-shell dielectric model that accounted for the major embryonic compartments. The analysis yielded a very high value for the ionic conductivity of the egg shell (chorion), which was confirmed by independent osmotic experiments. A relatively low capacitance of the yolk envelope was consistent with its double-membrane structure revealed by transmission electron microscopy. Yolk-free dead eggs exhibited only one co-field ROT peak, shifted markedly to lower frequencies with respect to the corresponding peak of live embryos. The dielectric data may be useful for monitoring the development and changes in fish embryos’ viability/conditions in basic research and industrial aquaculture.

  7. Study of dielectric and piezoelectric properties of CNT reinforced PZT-PVA 0-3 composite

    Science.gov (United States)

    Vyas, Prince; Prajapat, Rampratap; Manmeeta, Saxena, Dhiraj

    2016-05-01

    Ferroelectric ceramic/polymer composites have the compliance of polymers which overcome the problems of brittleness in ceramics. By imbedding piezoelectric ceramic powder into a polymer matrix, 0-3 composites with good mechanical properties and high dielectric breakdown strength can be developed. The obtained composites of 0-3 connectivity exhibit the piezoelectric properties of ceramics and flexibility, strength and lightness of polymer. These composites can be used in vibration sensing and transducer applications specially as piezoelectric sensors. A potential way to improve piezoelectric& dielectric properties of theses composites is by inclusion of another conductive phase in these composites as reported in the literature. In present work, we prepared PZT-PVA 0-3 composites with 60% ceramic volume fraction reinforced with CNTs with volume ranging from 0 to 1.5 vol%. These CNT reinforced composites were obtained using hot press method with thickness of 200 µm having 0-3 conductivity. These composites were poled applying DC voltage. Dielectric properties of these samples were obtained in a wide frequency range (100 Hz to 1 Mhz) at room temperature. The piezoelectric properties of these composites were analyzed by measuring piezoelectric charge constants (d33). The dielectric and piezoelectric properties of these composites were studied as a function of CNT volume content. In these reinforced composites, CNTs act as a conductive filler dispersed in the matrix which in turn facilitates poling and results in an increase of the piezoelectric properties of the composite due to formation of percolation path through the composites. With a CNT content of 0.3 vol.% in PZT/PVA/CNTs, an increase of 61.3 % was observed in piezoelectric strain factors (d33). In these CNT reinforced composites, a substantial increase (approx. 67%) was also observed in dielectric constant and approximately 89% increase was observed in dielectric loss factor. Results so obtained are in the good

  8. Theoretical and Experimental Studies of New Polymer-Metal High-Dielectric Constant Nanocomposites

    Science.gov (United States)

    Ginzburg, Valeriy; Elwell, Michael; Myers, Kyle; Cieslinski, Robert; Malowinski, Sarah; Bernius, Mark

    2006-03-01

    High-dielectric-constant (high-K) gate materials are important for the needs of electronics industry. Most polymers have dielectric constant in the range 2 materials with K > 10 it is necessary to combine polymers with ceramic or metal nanoparticles. Several formulations based on functionalized Au-nanoparticles (R ˜ 5 -— 10 nm) and PMMA matrix polymer are prepared. Nanocomposite films are subsequently cast from solution. We study the morphology of those nanocomposites using theoretical (Self-Consistent Mean-Field Theory [SCMFT]) and experimental (Transmission Electron Microscopy [TEM]) techniques. Good qualitative agreement between theory and experiment is found. The study validates the utility of SCMFT as screening tool for the preparation of stable (or at least metastable) polymer/nanoparticle mixtures.

  9. Molecular interactions in ethyl acetate-chlorobenzene binary solution: Dielectric, spectroscopic studies and quantum chemical calculations

    Science.gov (United States)

    Karthick, N. K.; Kumbharkhane, A. C.; Joshi, Y. S.; Mahendraprabu, A.; Shanmugam, R.; Elangovan, A.; Arivazhagan, G.

    2017-05-01

    Dielectric studies using Time Domain Reflectometry method has been carried out on the binary solution of Ethyl acetate (EA) with Chlorobenzene (CBZ) over the entire composition range. Spectroscopic (FTIR and 13C NMR) signatures of neat EA, CBZ and their equimolar binary solution have also been recorded. The results of the spectroscopic studies favour the presence of (CBZ) Csbnd H ⋯ Odbnd C (EA), (EA) methylene Csbnd H ⋯ π electrons (CBZ) and (EA) methyl Csbnd H ⋯ Cl (CBZ) contacts which have been validated using quantum chemical calculations. Dimerization of CBZ has been identified. Presence of β-clusters has been identified in all the solutions. Although EA and CBZ molecules have nearly equal molar volumes, CBZ molecules experience larger hindrance for the rotation than EA molecules. Very small excess dielectric constant (εE) values may be correlated with weak heteromolecular forces and/or closed heteromolecular association.

  10. Barium ferrite/epoxy resin nanocomposite system: Fabrication, dielectric, magnetic and hydration studies

    Directory of Open Access Journals (Sweden)

    A. Kanapitsas

    2016-03-01

    Full Text Available Composite systems of epoxy resin and barium ferrite nanoparticles have been prepared, and studied varying the content of the inclusions. Morphology of prepared samples has been examined via scanning electron microscopy and X-ray diffraction spectra, while electrical and magnetic properties were investigated by means of broadband dielectric spectroscopy, and magnetization tests respectively. Finally, water vapor sorption measurements were conducted in order to study the water sorption dynamics of the system. Electron microscopy images revealed the successful fabrication of nanocomposites. Dielectric permittivity increases with filler content, while three relaxation processes were detected in the relative spectra. These processes are attributed to interfacial polarization, glass to rubber transition of the matrix, and re-orientation of polar side groups of the polymer’s chain. Magnetization and magnetic saturation increase with magnetic nano-powder content. Nanocomposites absorb a small amount of water, not exceeding 1.7 wt%, regardless filler content, indicating their hydrophobic character.

  11. Dielectric and modulus studies of polycrystalline BaZrO3 ceramic

    Science.gov (United States)

    Saini, Deepash S.; Singh, Sunder; Kumar, Anil; Bhattacharya, D.

    2018-05-01

    In the present work, dielectric and modulus studies of polycrystalline BaZrO3 ceramic, prepared by modified combustion method followed by conventional sintering, are investigated over the frequency range of 100 Hz to 106 Hz at different temperatures from 250 to 500 °C in air. The high value of dielectric constant (ɛ' ˜ 103) of BaZrO3 at high temperature and low frequency can be attributed to the Maxwell-Wagner polarization mechanism as well as to the thermally activated mechanism of charge carriers. Electric modulus reveal two type relaxations in the 250 °C to 800 °C temperature region as studied at different frequencies over 100 Hz to 106 Hz in air.

  12. Connected Lighting System Interoperability Study Part 1: Application Programming Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gaidon, Clement [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Poplawski, Michael [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-10-31

    First in a series of studies that focuses on interoperability as realized by the use of Application Programming Interfaces (APIs), explores the diversity of such interfaces in several connected lighting systems; characterizes the extent of interoperability that they provide; and illustrates challenges, limitations, and tradeoffs that were encountered during this exploration.

  13. Sedimentation in Particulate Aqueous Suspensions as studied by means of Dielectric Time Domain Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pettersen, Bjoernar Hauknes

    1997-12-31

    Many problems in offshore oil production and multiphase transport are related to surface and colloid chemistry. This thesis applies dielectric spectroscopy as an experimental technique to study the behaviour of particle suspensions in polar media. The thesis opens with an introduction to suspensions and time domain dielectric spectroscopy. It then investigates the dielectric properties of silica and alumina dispersed in polar solvents. It is found that theoretical models can be used to calculate the volume fraction disperse phase in the suspension and that the particle sedimentation depends on the wetting of the particles, charge on the particle surface and viscosity of the solvent, and that this dependency can be measured by time domain dielectric spectroscopy. When the surface properties of silica and alumina particles were modified by coating them with a non-ionic polymer and a non-ionic surfactant, then different degrees of packing in the sedimented phase at the bottom of the sedimentation vessel occurred. Chemometrical methods on the synthesis of monodisperse silica particles were used to investigate what factors influence the particle size. It turned out that it is insufficient to consider only main variables when discussing the results of the synthesis. By introducing interaction terms, the author could explain the variation in the size of particles synthesized. The difference in the sedimentation rate of monodisperse silica particles upon variation of volume fraction particles, pH, salinity, amount of silanol groups at the particle surface and temperature was studied. The cross interactions play an important role and a model explaining the variation in sedimentation is introduced. Finally, magnetic particles dispersed in water and in an external magnetic field were used to study the impact on the sedimentation due to the induced flocculation. 209 refs., 90 figs., 9 tabs.

  14. Dielectric and physiochemical study of binary mixture of nitrobenzene with toluene

    Science.gov (United States)

    Mohod, Ajay G.; Deshmukh, S. D.; Pattebahadur, K. L.; Undre, P. B.; Patil, S. S.; Khirade, P. W.

    2018-05-01

    This paper presents the study of binary mixture of Nitrobenzene (NB) with Toluene (TOL) for eleven different concentrations at room temperature. The determined Dielectric Constant (ɛ0) Density (ρ) and Refractive index (nD) values of binary mixture are used to calculate the excess properties i.e. Excess Dielectric Constant (ɛ0E), Excess Molar Volume (VmE), Excess Refractive Index (nDE) and Excess Molar Refraction (RmE) of mixture over the entire composition range and fitted to the Redlich-Kister equation. The Kirkwood Correlation Factor (geff) and other parameters were used to discuss the information about the orientation of dipoles and the solute-solvent interaction of binary mixture at molecular level over the entire range of concentration.

  15. Dielectric and conformational studies of hydrogen bonded 2-ethoxyethanol and ethyl methyl ketone system

    Science.gov (United States)

    Pattebahadur, Kanchan. L.; Deshmukh, S. D.; Mohod, A. G.; Undre, P. B.; Patil, S. S.; Khirade, P. W.

    2018-05-01

    The Dielectric constant, density and refractive index of binary mixture of 2-ethoxy ethanol (2-EE) with ethyl methyl ketone (EMK) including those of the pure liquids were measured for 11 concentrations at 25°C temperature. The experimental data is used to calculate the Excess molar volume, Excess dielectric constant, Kirkwood correlation factor and Bruggemann factor. The excess parameters results were fitted to the Redlich-Kister type polynomial equation to derive its fitting coefficient. The Kirkwood correlation factor of the mixture has been discussed to yield information about solute solvent interaction. The Bruggeman plot shows a deviation from linearity. The FT-IR spectra of pure and their binary mixtures are also studied.

  16. Studies of permittivity and permeability of dielectric matrix with cuboid metallic inclusions in different orientations

    Directory of Open Access Journals (Sweden)

    W. M. Wu

    2014-10-01

    Full Text Available In this paper, we investigate the possibility of using the heterogeneous materials, with cuboid metallic inclusions inside a dielectric substrate (host to control the effective permittivity. We find that in the gigahertz range, such a material demonstrates a significantly larger permittivity compared to the pure dielectric substrate. Three principal orientations of microscale cuboid inclusions have been taken into account in this study. The highest permittivity is observed when the orientation provides the largest polarization (electric dipole moment. The detrimental side effect of the metallic inclusion, which leads to the decrease of the effective magnetic permeability, can be suppressed by the proper choice of shape and orientation of the inclusions. This choice can in fact reduce the induced current and hence maximize the permeability. The dissipative losses are shown to be negligible in the relevant range of frequencies and cuboid dimensions.

  17. Numerical study of the characteristics of a dielectric barrier discharge plasma actuator

    Science.gov (United States)

    Shi, C. A.; Adamiak, K.; Castle, G. S. P.

    2018-03-01

    A dielectric barrier discharge actuator to control airflow along a flat dielectric plate has been numerically investigated in this paper. In order to avoid large computing times, streamers, Trichel pulses and the ionic reactions involving photons and electrons are neglected. The numerical model assumes two types of generic ions, one positive and one negative, whose drift in the electric field produces the electrohydrodynamic flow. This study provides detailed insights into the physical mechanisms of DBD that include the electric field, space charge transport, surface charge accumulation and air flow motion. The results show the V-I characteristics, velocity profiles and drag force estimates. In addition, the effects of the voltage level, frequency and inlet air velocity on the actuator performance are presented and interpreted. The simulation results show a good agreement with theoretical expectations and experimental data available in literature.

  18. Dielectric properties: A gateway to antibacterial assay-A case study of low-density polyethylene/chitosan composite films.

    Digital Repository Service at National Institute of Oceanography (India)

    Sunilkumar, M.; Gafoor, A.A.; Anas, A.; Haseena, A.P.; Sujith, A.

    anhydride and dicumyl peroxide were used as a coupling agent and a free radical initiator, respectively. The dielectric properties of the composite films were studied as a function of chitosan loading, presence of plasticizer and variable applied frequency...

  19. An experimental study of electrical and dielectric properties of consolidated clayey materials

    International Nuclear Information System (INIS)

    Comparon, L.

    2005-06-01

    This study is devoted to the electrical and dielectric properties of consolidated clays. A better understanding of the conduction and polarization phenomena in clays is necessary to better interpret in situ measurements in terms of water saturation and texture. An experimental study was carried out on synthetic clay samples (kaolinite and smectite) compacted with various water contents, porosities and mineralogical compositions, on a large frequency range, using three laboratory setups. The electrical properties of natural argillites (from ANDRA) were then investigated. We found that the response of the synthetic samples is mainly controlled by water content on the whole frequency range; two polarization phenomena were observed, which were related to the Maxwell-Wagner polarization and the electrical double layer polarization around the clay particles. The electrical response of argillites is more complex; it is controlled by water content but also by the microstructure of the rock. In these rocks, the electrical and dielectric anisotropies are high; anisotropy was also measured for the synthetic clays. The existing models explain the high frequency limit of the dielectric permittivity of the clayey materials, but the low frequency part of the spectra (≤1 MHz) needs theoretical developments. (author)

  20. Electrowetting on dielectric: experimental and model study of oil conductivity on rupture voltage

    Science.gov (United States)

    Zhao, Qing; Tang, Biao; Dong, Baoqin; Li, Hui; Zhou, Rui; Guo, Yuanyuan; Dou, Yingying; Deng, Yong; Groenewold, Jan; Henzen, Alexander Victor; Zhou, Guofu

    2018-05-01

    Electrowetting on dielectric devices uses a conducting (water) and insulating (oil) liquid phase in conjunction on a dielectric layer. In these devices, the wetting properties of the liquid phases can be manipulated by applying an electric field. The electric field can rupture the initially flat oil film and promotes further dewetting of the oil. Here, we investigate a problem in the operation of electrowetting on dielectric caused by a finite conductivity of the oil. In particular, we find that the voltage at which the oil film ruptures is sensitive to the application of relatively low DC voltages prior to switching. Here, we systematically investigate this dependence using controlled driving schemes. The mechanism behind these history effects point to charge transport processes in the dielectric and the oil, which can be modeled and characterized by a decay time. To quantify the effects the typical response timescales have been measured with a high-speed video camera. The results have been reproduced in simulations. In addition, a simplified yet accurate equivalent circuit model is developed to analyze larger data sets more conveniently. The experimental data support the hypothesis that each pixel can be characterized by a single decay time. We studied an ensemble of pixels and found that they showed a rather broad distribution of decay times with an average value of about 440 ms. This decay time can be interpreted as a discharge timescale of the oil, not to be confused with discharge of the entire system which is generally much faster (<1 ms). Through the equivalent circuit model, we also found that variations in the fluoropolymer (FP) conductivity cannot explain the distribution of decay times, while variations in oil conductivity can.

  1. Dielectric and electrical conductivity studies of bulk lead (II) oxide (PbO)

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, A.A.A., E-mail: aaadarwish@gmail.com [Department of Physics, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahwit (Yemen); Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia); El-Zaidia, E.F.M.; El-Nahass, M.M. [Department of Physics, Faculty of Education, Ain Shams University, Rorxy, Cairo 11757 (Egypt); Hanafy, T.A. [Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia); Department of Physics, Faculty of Science, Fayoum University, 63514 El Fayoum (Egypt); Al-Zubaidi, A.A. [Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia)

    2014-03-15

    Highlights: • The AC measurements of PbO were measured at temperature range 313–523 K. • The dielectric constants increased with temperature. • The mechanism responsible for AC conduction is electronic hopping. -- Abstract: The dielectric properties, the impedance spectroscopy and AC conductivity of bulk PbO have been investigated as a function of frequency and temperature. The measurements were carried out in the frequency range from 40 to 5 × 10{sup 6} Hz and in temperature range from 313 to 523 K. The frequency response of dielectric constant, ε{sub 1}, and dielectric loss index, ε{sub 2}, as a function of temperature were studied. The values of ε{sub 1} and ε{sub 2} were found to decrease with the increase in frequency. However, they increase with the increase in temperature. The presence of a single arc in the complex modulus spectrum at different temperatures confirms the single-phase character of the PbO. The AC conductivity exhibited a universal dynamic response: σ{sub AC} = Aω{sup s}. The AC conductivity was also found to increase with increasing temperature and frequency. The correlation barrier hopping (CBH) model was found to apply to the AC conductivity data. The calculated values of s were decreased with temperature. This behavior reveals that the conduction mechanism for PbO samples is CBH. The activation energy for AC conductivity decreases with increasing frequency. This confirms that the hopping conduction to the dominant mechanism for PbO samples.

  2. SUMC/MPOS/HAL interface study

    Science.gov (United States)

    Saponaro, J. A.; Kosmala, A. L.

    1973-01-01

    The implementation of the HAL/S language on the IBM-360, and in particular the mechanization of its real time, I/O, and error control statements within the OS-360 environment is described. The objectives are twofold: (1) An analysis and general description of HAL/S real time, I/O, and error control statements and the structure required to mechanize these statements. The emphasis is on describing the logical functions performed upon execution of each HAL statement rather than defining whether it is accomplished by the compiler or operating system. (2) An identification of the OS-360 facilities required during execution of HAL/S code as implemented for the current HAL/S-360 compiler; and an evaluation of the aspects involved with interfacing HAL/S with the SUMC operating system utilizing either the HAL/S-360 compiler or by designing a new HAL/S-SUMC compiler.

  3. Interest in broadband dielectric spectroscopy to study the electronic transport in materials for lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Badot, Jean-Claude, E-mail: jc.badot@chimie-paristech.fr [Institut de Recherche de Chimie Paris, UMR CNRS 8247, Réseau sur le Stockage Electrochimique de l' Energie (RS2E), Chimie Paris Tech, PSL*, 11 rue P. et M. Curie, 75231 Cedex 05 Paris (France); Lestriez, Bernard [Institut des Matériaux Jean Rouxel, UMR CNRS 6502, Université de Nantes, 2 rue de la Houssinière, BP32229, 44322 Nantes (France); Dubrunfaut, Olivier [GeePs | Group of electrical engineering – Paris, UMR CNRS 8507, CentraleSupélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Univ Paris 06, 3 & 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette CEDEX, Paris (France)

    2016-11-15

    Highlights: • Broadband dielectric spectroscopy measures the multiscale electronic conductivity from macroscopic to interatomic sizes. • There is an influence of the surface states on the electronic transfer of powdered materials (e.g. thin insulating layer of Li{sub 2}CO{sub 3} on LiNiO{sub 2} and carbon coating on LiFePO{sub 4}). • Electrical relaxations resulting from the interfacial polarizations at the different scales of the carbon black network are evidenced. - Abstract: Broadband dielectric spectroscopy (BDS) is used to measure complex permittivity and conductivity of conducting materials for lithium batteries at frequencies from a few Hz to several GHz with network and impedance analysers. Under the influence of an electric field, there will be charge density fluctuations in the conductor mainly due to electronic transfer. These fluctuations result in dielectric relaxations for frequencies below 100 GHz. The materials are compacted powders in which each element (particles, agglomerates of particles) can have different sizes and morphologies. In the present review, studies are reported on the influence of surface states in LiNiO{sub 2} (ageing and degradation in air) and LiFePO{sub 4} (carbon coating thin layer), and on a composite electrode based on the lithium trivanadate (Li{sub 1.1}V{sub 3}O{sub 8}) active material. The results have shown that the BDS technique is very sensitive to the different scales of materials architectures involved in electronic transport, from interatomic distances to macroscopic sizes.

  4. Electronic polarizability of light crude oil from optical and dielectric studies

    Science.gov (United States)

    George, A. K.; Singh, R. N.

    2017-07-01

    In the present paper we report the temperature dependence of density, refractive indices and dielectric constant of three samples of crude oils. The API gravity number estimated from the temperature dependent density studies revealed that the three samples fall in the category of light oil. The measured data of refractive index and the density are used to evaluate the polarizability of these fluids. Molar refractive index and the molar volume are evaluated through Lorentz-Lorenz equation. The function of the refractive index, FRI , divided by the mass density ρ, is a constant approximately equal to one-third and is invariant with temperature for all the samples. The measured values of the dielectric constant decrease linearly with increasing temperature for all the samples. The dielectric constant estimated from the refractive index measurements using Lorentz-Lorentz equation agrees well with the measured values. The results are promising since all the three measured properties complement each other and offer a simple and reliable method for estimating crude oil properties, in the absence of sufficient data.

  5. Experimental study for the use of sulfur hexafluoride as dielectric gas in particle accelerators

    International Nuclear Information System (INIS)

    Candanedo y Bernabe, C.

    1993-01-01

    The sulfur hexafluoride is the better dielectric gas in the world. It is used in particle accelerator, power stations and high voltage transformators. This is a high stable gas, but when is used as dielectric is degraded in toxic and corrosive fluorides this degradation of sulfur hexafluoride is a function of the voltaic arc, crown effect, pressure, temperature and radiation. The purification of the sulfur fluoride permitted to work in safe form and without the risks as contaminant. The objective of the work is the development of a process for the separation of the wastes from the fabrication of sulphur fluoride and the products of degradation. This process used adsorbents when this gas is used as dielectric. The methodology employed was bibliography research, experimental design of the equipment, construction of the experimental equipment, selection and use of adsorbents, installation of the adsorption columns for the experimentation, flow of the sulfur hexafluoride through the adsorbents, searching of the fluoride hexafluoride before and after of the step through the adsorption columns and writing of the results. In base to the results we conclude that the process is good. The work could be advantage using chromatographic techniques with adequate standards. Is possible to extend the study using an additional number of adsorbents. (Author). 34 refs, 7 graphs, 3 tabs

  6. Interest in broadband dielectric spectroscopy to study the electronic transport in materials for lithium batteries

    International Nuclear Information System (INIS)

    Badot, Jean-Claude; Lestriez, Bernard; Dubrunfaut, Olivier

    2016-01-01

    Highlights: • Broadband dielectric spectroscopy measures the multiscale electronic conductivity from macroscopic to interatomic sizes. • There is an influence of the surface states on the electronic transfer of powdered materials (e.g. thin insulating layer of Li_2CO_3 on LiNiO_2 and carbon coating on LiFePO_4). • Electrical relaxations resulting from the interfacial polarizations at the different scales of the carbon black network are evidenced. - Abstract: Broadband dielectric spectroscopy (BDS) is used to measure complex permittivity and conductivity of conducting materials for lithium batteries at frequencies from a few Hz to several GHz with network and impedance analysers. Under the influence of an electric field, there will be charge density fluctuations in the conductor mainly due to electronic transfer. These fluctuations result in dielectric relaxations for frequencies below 100 GHz. The materials are compacted powders in which each element (particles, agglomerates of particles) can have different sizes and morphologies. In the present review, studies are reported on the influence of surface states in LiNiO_2 (ageing and degradation in air) and LiFePO_4 (carbon coating thin layer), and on a composite electrode based on the lithium trivanadate (Li_1_._1V_3O_8) active material. The results have shown that the BDS technique is very sensitive to the different scales of materials architectures involved in electronic transport, from interatomic distances to macroscopic sizes.

  7. QCM-D studies on polymer behavior at interfaces

    CERN Document Server

    Liu, Guangming

    2014-01-01

    QCM-D Studies on Polymer Behavior at Interfaces reviews the applications of quartz crystal microbalance with dissipation (QCM-D) in polymer research, including the conformational change of grafted polymer chains, the grafting kinetics of polymer chains, the growth mechanism of polyelectrolyte multilayers, and the interactions between polymers and phospholipid membranes. It focuses on how QCM-D can be applied to the study of polymer behavior at various solid-liquid interfaces. Moreover, it clearly reveals the physical significance of the changes in frequency and dissipation associated with the different polymer behaviors at the interfaces.

  8. A compare study on dielectric behaviors of Au/(Zn-doped PVA)/n-4H ...

    Indian Academy of Sciences (India)

    55

    thickness effect of Zn-doped PVA on the dielectric constant (ε′), dielectric .... In order to formation MPS structures, the prepared PVA (Zn-nanoparticle doped) ..... MacCallumand J R and Vincent C A 1989 Polymer Electrolyte Reviews (London:.

  9. Dielectric spectroscopy technique applied to study the behaviour of irradiated polymer

    International Nuclear Information System (INIS)

    Saoud, R.; Soualmia, A.; Guerbi, C.A.; Benrekaa, N.

    2006-01-01

    Relaxation spectroscopy provides an excellent method for the study of motional processes in materials and has been widely applied to macromolecules and polymers. The technique is potentially of most interest when applied to irradiated systems. Application to the study of the structure beam-irradiated Teflon is thus an outstanding opportunity for the dielectric relaxation technique, particularly as this material exhibits clamping problems when subjected to dynamic mechanical relaxation studies. A very wide frequency range is necessary to resolve dipolar effects. In this paper, we discuss some significant results about the behavior and the modification of the structure of Teflon submitted to weak energy radiations

  10. Buried interfaces - A systematic study to characterize an adhesive interface at multiple scales

    Science.gov (United States)

    Haubrich, Jan; Löbbecke, Miriam; Watermeyer, Philipp; Wilde, Fabian; Requena, Guillermo; da Silva, Julio

    2018-03-01

    A comparative study of a model adhesive interface formed between laser-pretreated Ti15-3-3-3 and the thermoplastic polymer PEEK has been carried out in order to characterize the interfaces' structural details and the infiltration of the surface nano-oxide by the polymer at multiple scales. Destructive approaches such as scanning and transmission electron microscopy of microsections prepared by focused ion beam, and non-destructive imaging approaches including laser scanning and scanning electron microscopy of pretreated surfaces as well as synchrotron computed tomography techniques (micro- and ptychographic tomographies) were employed for resolving the large, μm-sized melt-structures and the fine nano-oxide substructure within the buried interface. Scanning electron microscopy showed that the fine, open-porous nano-oxide homogeneously covers the larger macrostructure features which in turn cover the joint surface. The open-porous nano-oxide forming the interface itself appears to be fully infiltrated and wetted by the polymer. No voids or even channels were detected down to the respective resolution limits of scanning and transmission electron microscopy.

  11. Contribution to the thermal study of a dielectric barrier discharge reactor

    International Nuclear Information System (INIS)

    Dubus, Nicolas

    2009-01-01

    This thesis aims to study the thermal behaviour of a laboratory Dielectric Barrier Discharge (DBD) reactor. An experimental study was first realized to measure temperatures at different points of the reactor by using optic fibers. These measurements were performed in transient and steady states. To examine the influence of heat losses, not insulated and insulated reactors were considered. The influence of the nature and the form of the applied voltage was else considered. Experiments were conducted with a sinusoidal voltage and a pulsed power supply. (author) [fr

  12. A large-scale study of the ultrawideband microwave dielectric properties of normal breast tissue obtained from reduction surgeries.

    Science.gov (United States)

    Lazebnik, Mariya; McCartney, Leah; Popovic, Dijana; Watkins, Cynthia B; Lindstrom, Mary J; Harter, Josephine; Sewall, Sarah; Magliocco, Anthony; Booske, John H; Okoniewski, Michal; Hagness, Susan C

    2007-05-21

    The efficacy of emerging microwave breast cancer detection and treatment techniques will depend, in part, on the dielectric properties of normal breast tissue. However, knowledge of these properties at microwave frequencies has been limited due to gaps and discrepancies in previously reported small-scale studies. To address these issues, we experimentally characterized the wideband microwave-frequency dielectric properties of a large number of normal breast tissue samples obtained from breast reduction surgeries at the University of Wisconsin and University of Calgary hospitals. The dielectric spectroscopy measurements were conducted from 0.5 to 20 GHz using a precision open-ended coaxial probe. The tissue composition within the probe's sensing region was quantified in terms of percentages of adipose, fibroconnective and glandular tissues. We fit a one-pole Cole-Cole model to the complex permittivity data set obtained for each sample and determined median Cole-Cole parameters for three groups of normal breast tissues, categorized by adipose tissue content (0-30%, 31-84% and 85-100%). Our analysis of the dielectric properties data for 354 tissue samples reveals that there is a large variation in the dielectric properties of normal breast tissue due to substantial tissue heterogeneity. We observed no statistically significant difference between the within-patient and between-patient variability in the dielectric properties.

  13. A large-scale study of the ultrawideband microwave dielectric properties of normal breast tissue obtained from reduction surgeries

    International Nuclear Information System (INIS)

    Lazebnik, Mariya; McCartney, Leah; Popovic, Dijana; Watkins, Cynthia B; Lindstrom, Mary J; Harter, Josephine; Sewall, Sarah; Magliocco, Anthony; Booske, John H; Okoniewski, Michal; Hagness, Susan C

    2007-01-01

    The efficacy of emerging microwave breast cancer detection and treatment techniques will depend, in part, on the dielectric properties of normal breast tissue. However, knowledge of these properties at microwave frequencies has been limited due to gaps and discrepancies in previously reported small-scale studies. To address these issues, we experimentally characterized the wideband microwave-frequency dielectric properties of a large number of normal breast tissue samples obtained from breast reduction surgeries at University of Wisconsin and University of Calgary hospitals. The dielectric spectroscopy measurements were conducted from 0.5 to 20 GHz using a precision open-ended coaxial probe. The tissue composition within the probe's sensing region was quantified in terms of percentages of adipose, fibroconnective and glandular tissues. We fit a one-pole Cole-Cole model to the complex permittivity data set obtained for each sample and determined median Cole-Cole parameters for three groups of normal breast tissues, categorized by adipose tissue content (0-30%, 31-84% and 85-100%). Our analysis of the dielectric properties data for 354 tissue samples reveals that there is a large variation in the dielectric properties of normal breast tissue due to substantial tissue heterogeneity. We observed no statistically significant difference between the within-patient and between-patient variability in the dielectric properties

  14. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  15. Extrinsic and intrinsic contributions for dielectric behavior of La{sub 2}NiMnO{sub 6} ceramic

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Zhenzhu, E-mail: czz03@163.com [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Liu, Xiaoting; He, Weiyan [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Ruan, Xuezheng [Key Laboratory of Inorganic Function Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Yanfang; Liu, Jinrong [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China)

    2015-11-15

    The influences of electrode material, DC bias and temperature on the electrical and dielectric properties of LNMO ceramic have been investigated using impedance spectroscopy and dielectric measurements. Evidences from dielectric and impedance analysis showed that the giant dielectric constant and its notable tunability originated from extrinsic contribution from interface polarization. Low temperature and high frequency dielectric characterization revealed the low intrinsic dielectric constant.

  16. FTIR and dielectric studies of molecular interaction between alkyl methacrylates and primary alcohols

    International Nuclear Information System (INIS)

    Dharmalingam, K.; Ramachandran, K.; Sivagurunathan, P.

    2007-01-01

    The molecular interaction between alkyl methacrylates (methyl methacrylate, ethyl methacrylate and butyl methacrylate) and primary alcohols (1-propanol, 1-butanol, 1-pentanol, 1-heptanol, 1-octanol and 1-decanol) has been studied in carbon tetrachloride by FTIR spectroscopic and dielectric methods. The results show that the most likely association between alcohol and ester is 1:1 complex through the free hydroxyl group of the alcohol and the carbonyl group of ester, and the alkyl chain length of both the alcohols and esters plays an important role in the determination of the strength of hydrogen bond (O-H:O=C) formed

  17. Study of observed broad dielectric relaxation and compatibility of polysulfone - Polyvinylidenefluoride blends

    Science.gov (United States)

    Patel, Swarnim; Shrivas, Sandhya; Dubey, R. K.; Keller, J. M.

    2018-05-01

    Short circuit thermally stimulated depolarization current measurement techniques has been employed to investigate the dielectric relaxation behavior of PSF: PVDF blends. The samples taken were blends of composition PSF: PVDF:: 80:20; 85:15; 90:10 and 95:05 percent by weight. The thermograms were characterized by a high value of initial current, a low temperature peak around 75-80°C and a prominent broad peak in the temperature interval 130 to 160°C. The two polymers are found to form compatible blend in the studied composition range.

  18. Interface thermal characteristics of flip chip packages - A numerical study

    International Nuclear Information System (INIS)

    Kandasamy, Ravi; Mujumdar, A.S.

    2009-01-01

    Flip chip ball grid array (FC-BGA) packages are commonly used for high inputs/outputs (I/O) ICs; they have been proven to provide good solutions for a variety of applications to maximize thermal and electrical performance. A fundamental limitation to such devices is the thermal resistance at the top of the package, which is characterized θ JC parameter. The die-to-lid interface thermal resistance is identified as a critical issue for the thermal management of electronic packages. This paper focuses on the effect of the interface material property changes on the interface thermal resistance. The effect of package's junction to case (Theta-JC or θ JC ) thermal performance is investigated for bare die, flat lid and cup lid packages using a validated thermal model. Thermal performance of a cup or flat lid attached and bare die packages were investigated for different interface materials. Improved Theta-JC performance was observed for the large die as compared to the smaller die. Several parametric studies were carried out to understand the effects of interface bond line thickness (BLT), different die sizes, the average void size during assembly and thermal conductivity of interface materials on package thermal resistance

  19. Structural, optical, dielectric and magnetic studies of gadolinium-added Mn-Cu nanoferrites

    Science.gov (United States)

    Kanna, R. Rajesh; Lenin, N.; Sakthipandi, K.; Kumar, A. Senthil

    2018-05-01

    Spinel ferrite with the general formula Mn1-xCuxFe1.85Gd0.15O4 (x = 0.2, 0.4, 0.6 and 0.8) was synthesized using the standard sonochemical method. The structure, optical, morphology, dielectric and magnetic properties of the prepared Mn1-xCuxFe1.85Gd0.15O4 nanoferrites were exhaustively investigated using various characterization techniques. The phase purity, secondary phase and crystallite parameters were studied from X-ray diffraction patterns. Fourier transform infrared spectra showed two absorption bands of transition metal oxides in the frequency range from 400 to 650 cm-1, which are related to asymmetric stretching modes of the spinel ferrites (AB2O4). Raman spectra have five active modes illustrating the vibration of O2- ions at both tetrahedral (A) site and octahedral (B) site ions. The wide and narrow scan spectrum from X-ray photoelectron spectroscopy results confirmed the presence of Mn, Cu, Gd, Fe, C and O elements in the composition. The oxidation state and core level of the photo electron peaks of Mn 2p, Cu 2p, Gd 3d, Fe 2p and O 1s were analyzed. The influence of the Cu2+ concentration in Mn1-xCuxFe1.85Gd0.15O4 on the morphology, varying from nanorods, nanoflakes to spherical, was explored on the basis of scanning electron microscopy images. Ultraviolet diffuse reflectance spectroscopy studies indicated that the optical bandgap (5.12-5.32 eV) of the nanoferrites showed an insulating behavior. The dielectric constant, loss tangent and complex dielectric constant values decreased with an increase in frequency with the addition of Gd3+ content. A vibrating sample magnetometer showed that the prepared nanoferrites had a soft ferromagnetic nature. The magnetic parameter changed markedly with an increase in the Cu content in Mn1-xCuxFe1.85Gd0.15O4 nanoferrites. The optical, dielectric and magnetic properties were considerably enhanced with the addition of Gd3+ ions in the spinel nanoferrites.

  20. Studies of low current back-discharge in point-plane geometry with dielectric layer

    International Nuclear Information System (INIS)

    Jaworek, A.; Rajch, E.; Czech, T.; Lackowski, M

    2005-01-01

    The paper presents results of spectroscopic investigations of back-discharge generated in the point-plane electrode geometry in air at atmospheric pressure, with the plane covered with fly ash layer. Four forms of the discharges were studied: onset streamers, glow, breakdown streamers and low-current back-arc discharge. Both polarities of the active discharge electrode, positive and negative, were tested. The back discharge is a type of DC electrical discharge, which take place when the passive plane electrode is covered with a dielectric layer. The layer can be made of solid material or a packed bed of dust or powder of low conductivity. The charge produced due to ionisation processes in the vicinity of the active point electrode is accumulated on the dielectric surface, and generates high electric field through this layer. When critical electric field through the layer is attained an electrical breakdown of the layer take place. The point of breakdown becomes a new source of ions of polarity opposite to those generated by the active electrode. The dielectric layer on the passive electrode causes that gaseous discharges such as breakdown streamers or arc start at lower voltages than they could in the case of normal corona discharge. The visual forms of the discharge were recorded and correlated with the current-voltage characteristics and optical emission spectra. Emission spectra of the discharge were measured in the light wavelength range of 200 to 600 nm to get information about excitation and ionisation processes. The light spectra were analysed by monochromator SPM-2 Karl-Zeiss-Jena with diffraction grating of 1302 grooves/mm and photomultiplier R375 (Hamamatsu) and signal preamplifier unit C7319 (Hamamatsu). The spectral analysis showed that the nitrogen molecular bands were dominant, but the emission of negative ions from the dielectric layer material were also detected. The most noticeable light emission in the range from 280 to 490 nm due to second

  1. Magnetic and dielectric studies of Fe substituted sillenite phase bismuth cobaltite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ray, J.; Biswal, A.K.; Kuila, S.; Vishwakarma, P.N., E-mail: prakashn@nitrkl.ac.in

    2015-06-05

    Highlights: • The samples prepared under ambient conditions, crystalizes in sillenite phase. • Ferrimagnetic ordering in BCO occurs at 30 K, with no bifurcation in ZFC and FC. • BCFO shows large bifurcation in ZFC and FC data as the sample is cooled down. • Dielectric loss improves by one order when 50% of cobalt is replaced with Fe. • Well distinguished extrinsic and intrinsic contributions in BCO and BCFO are seen. - Abstract: (Bi{sub 13}Co{sub 12})CoO{sub 40} (BCO) and (Bi{sub 13}Co{sub 5.5}Fe{sub 6.5})CoO{sub 40} (BCFO) nanoparticles are prepared by sol–gel auto combustion method. The X-ray diffraction study (XRD) reveals cubic crystal structure with space group I23. Surface scanning via atomic force microscopy shows the particle size decreases from 100 nm to 75 nm on partially substituting Fe at Co site. At room temperature, BCO is paramagnetic and shows signature of magnetic ordering at 30 K, which seems to be competing paramagnetic and antiferromagnetic behavior. No sign of magnetic disorder is seen, though indication of magnetic frustration is seen. Interestingly, the Fe substituted BCFO shows large magnetic disorder (even at room temperature) with strengthening ferromagnetic ordering as the temperature is lowered. The low temperature dielectric and magnetodielectric measurement shows dominance of extrinsic contributions, through-out the temperature range for BCO. For BCFO, the behavior may be divided under two regions viz., intrinsic (<260 K) and extrinsic (>260 K). Relaxation in both the regions is described by Arrhenius behavior with activation energies 0.25 eV and 0.04 eV in the extrinsic and intrinsic regions respectively. Most interestingly, the dielectric loss decreases by one order for Fe substituted sample. The Haverliak–Negami equation is found to better describe the observed relaxation data.

  2. Magnetic and dielectric studies of Fe substituted sillenite phase bismuth cobaltite nanoparticles

    International Nuclear Information System (INIS)

    Ray, J.; Biswal, A.K.; Kuila, S.; Vishwakarma, P.N.

    2015-01-01

    Highlights: • The samples prepared under ambient conditions, crystalizes in sillenite phase. • Ferrimagnetic ordering in BCO occurs at 30 K, with no bifurcation in ZFC and FC. • BCFO shows large bifurcation in ZFC and FC data as the sample is cooled down. • Dielectric loss improves by one order when 50% of cobalt is replaced with Fe. • Well distinguished extrinsic and intrinsic contributions in BCO and BCFO are seen. - Abstract: (Bi 13 Co 12 )CoO 40 (BCO) and (Bi 13 Co 5.5 Fe 6.5 )CoO 40 (BCFO) nanoparticles are prepared by sol–gel auto combustion method. The X-ray diffraction study (XRD) reveals cubic crystal structure with space group I23. Surface scanning via atomic force microscopy shows the particle size decreases from 100 nm to 75 nm on partially substituting Fe at Co site. At room temperature, BCO is paramagnetic and shows signature of magnetic ordering at 30 K, which seems to be competing paramagnetic and antiferromagnetic behavior. No sign of magnetic disorder is seen, though indication of magnetic frustration is seen. Interestingly, the Fe substituted BCFO shows large magnetic disorder (even at room temperature) with strengthening ferromagnetic ordering as the temperature is lowered. The low temperature dielectric and magnetodielectric measurement shows dominance of extrinsic contributions, through-out the temperature range for BCO. For BCFO, the behavior may be divided under two regions viz., intrinsic (<260 K) and extrinsic (>260 K). Relaxation in both the regions is described by Arrhenius behavior with activation energies 0.25 eV and 0.04 eV in the extrinsic and intrinsic regions respectively. Most interestingly, the dielectric loss decreases by one order for Fe substituted sample. The Haverliak–Negami equation is found to better describe the observed relaxation data

  3. Study of Dielectric Breakdown Performance of Transformer Oil Based Magnetic Nanofluids

    Directory of Open Access Journals (Sweden)

    Yuzhen Lv

    2017-07-01

    Full Text Available Research on the transformer oil-based nanofluids (NFs has been raised expeditiously over the past decade. Although, there is discrepancy in the stated results and inadequate understanding of the mechanisms of improvement of dielectric nanofluids, these nanofluids have emerged as a potential substitute of mineral oils as insulating and heat removal fluids for high voltage equipment. The transformer oil (TO based magnetic fluids (ferrofluids may be regarded as the posterity insulation fluids as they propose inspiring unique prospectus to improve dielectric breakdown strength, as well as heat transfer efficiency, as compared to pure transformer oils. In this work, transformer oil-based magnetic nanofluids (MNFs are prepared by dispersal of Fe3O4 nanoparticles (MNPs into mineral oil as base oil, with various NPs loading from 5 to 80% w/v. The lightning impulse breakdown voltages (BDV measurement was conducted in accordance with IEC 60897 by using needle to sphere electrodes geometry. The test results showed that dispersion of magnetic NPs may improve the insulation strength of MO. With the increment of NPs concentrations, the positive lightning impulse (LI breakdown strength of TO is first raised, up to the highest value at 40% loading, and then tends to decrease at higher concentrations. The outcomes of negative LI breakdown showed that BDV of MNFs, with numerous loadings, were inferior to the breakdown strength of pure MO. The 40% concentration of nanoparticles (optimum concentration was selected, and positive and negative LI breakdown strength was also further studied at different sizes (10 nm, 20 nm, 30 nm and 40 nm of NPs and different electrode gap distances. Augmentation in the BDV of the ferrofluids (FFs is primarily because of dielectric and magnetic features of Fe3O4 nanoaprticles, which act as electron scavengers and decrease the rate of free electrons produced in the ionization process. Research challenges and technical difficulties

  4. Construction of electron accelerator for studying secondary emission in dielectric materials

    International Nuclear Information System (INIS)

    Hessel, R.

    1990-01-01

    An acelerator for the generation of low energy electrons (in the 0.4 to 20 keV range) was constructed. The accelerator is equipped with some devices especially designed for the investigation of the electrical properties of electron-irradiated dielectrics. In this work we have employed it for the study of the secondary electron emission of irradiated polymers. Reference is made to a method proposed by H. von Seggern (IEEE Trans. Nucl. Sci. NS-32, p.1503 (1985)] which was intended for the determination of the electron emission yield especially between the two cross-over points in a single run, here called the dynamical method. We have been able to prove that, contrary to expectation, this method does not give correct results over the entire emission curve. Rather it gives yield values which are too low by 25% in the region where the emission exhibits a maximum, due to the interaction between the electron emission process and the positive surface charge of the dielectric. However the method needs not to be dismissed entirely. As it is, it can be used advantageously for the precise determination of the energy of the second cross-over point. In addition, with the same set up, the method could be improved by replacing the continuous irradiation of the sample by a pulsed irradiation, leading to results essentially the same as those shown in the literature. Finally analysing the process of interaction between the positive charge of the dielectric and the mechanism of electron emission in several situations, we were able: I) to determine the maximum value and the average value of the escape depth of the emitted electrons; II) for a sample with a net positive charge, to show that the positive charge resides very near the surface of incidence; III) for a sample with a net negative charge, to show that the positive charge also resides near the surface while the (prevalent) negative charge resides in the bulk of the material. (author)

  5. Study of the carbon material / electrolyte interface; Etude de l`interface materiau carbone / electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Genies, S.; Yazami, R. [Ecole Nationale Superieure d`Electrochimie et d`Electrometallurgie, 38 - Saint-Martin-d`Heres (France); Frison, J.C. [CNET, Centre de Recherches de Lannion, 22 (France); Ledran, J. [CNET, 92 - Issy-les-Moulineaux (France)

    1996-12-31

    The aim of this work is the comparative study of the properties of the natural graphite/liquid organic electrolyte interface by impedance spectroscopy with respect to different lithium salts (LiX with X = ClO{sub 4}{sup -}, BF{sub 4}{sup -}, CF{sub 3}SO{sub 3}{sup -}, N(CF{sub 3}SO{sub 2}){sub 2}{sup -}, PF{sub 6}{sup -}). The evolution of the interface properties during the first electrochemical reduction suggests different mechanisms of formation of passivation films. A more stable, thin and homogenous film seems to develop when the LiN(CF{sub 3}SO{sub 2}){sub 2} or LiPF{sub 6} lithium salts are used. The chemical diffusion coefficient of lithium in graphite has been determined by impedance spectroscopy. (J.S.) 16 refs.

  6. Study of the carbon material / electrolyte interface; Etude de l`interface materiau carbone / electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Genies, S; Yazami, R [Ecole Nationale Superieure d` Electrochimie et d` Electrometallurgie, 38 - Saint-Martin-d` Heres (France); Frison, J C [CNET, Centre de Recherches de Lannion, 22 (France); Ledran, J [CNET, 92 - Issy-les-Moulineaux (France)

    1997-12-31

    The aim of this work is the comparative study of the properties of the natural graphite/liquid organic electrolyte interface by impedance spectroscopy with respect to different lithium salts (LiX with X = ClO{sub 4}{sup -}, BF{sub 4}{sup -}, CF{sub 3}SO{sub 3}{sup -}, N(CF{sub 3}SO{sub 2}){sub 2}{sup -}, PF{sub 6}{sup -}). The evolution of the interface properties during the first electrochemical reduction suggests different mechanisms of formation of passivation films. A more stable, thin and homogenous film seems to develop when the LiN(CF{sub 3}SO{sub 2}){sub 2} or LiPF{sub 6} lithium salts are used. The chemical diffusion coefficient of lithium in graphite has been determined by impedance spectroscopy. (J.S.) 16 refs.

  7. Surfactants, interfaces and pores : a theoretical study

    NARCIS (Netherlands)

    Huinink, H.

    1998-01-01

    The aim of this study was to investigate the behavior of surfactants in porous media by theoretical means. The influence of curvature of a surface on the adsorption has been studied with a mean field lattice (MFL) model, as developed by Scheutjens and Fleer. An analytical theory has been

  8. Metal/dielectric thermal interfacial transport considering cross-interface electron-phonon coupling: Theory, two-temperature molecular dynamics, and thermal circuit

    Science.gov (United States)

    Lu, Zexi; Wang, Yan; Ruan, Xiulin

    2016-02-01

    The standard two-temperature equations for electron-phonon coupled thermal transport across metal/nonmetal interfaces are modified to include the possible coupling between metal electrons with substrate phonons. The previous two-temperature molecular dynamics (TT-MD) approach is then extended to solve these equations numerically at the atomic scale, and the method is demonstrated using Cu/Si interface as an example. A key parameter in TT-MD is the nonlocal coupling distance of metal electrons and nonmetal phonons, and here we use two different approximations. The first is based on Overhauser's "joint-modes" concept, while we use an interfacial reconstruction region as the length scale of joint region rather than the phonon mean-free path as in Overhauser's original model. In this region, the metal electrons can couple to the joint phonon modes. The second approximation is the "phonon wavelength" concept where electrons couple to phonons nonlocally within the range of one phonon wavelength. Compared with the original TT-MD, including the cross-interface electron-phonon coupling can slightly reduce the total thermal boundary resistance. Whether the electron-phonon coupling within the metal block is nonlocal or not does not make an obvious difference in the heat transfer process. Based on the temperature profiles from TT-MD, we construct a new mixed series-parallel thermal circuit. We show that such a thermal circuit is essential for understanding metal/nonmetal interfacial transport, while calculating a single resistance without solving temperature profiles as done in most previous studies is generally incomplete. As a comparison, the simple series circuit that neglects the cross-interface electron-phonon coupling could overestimate the interfacial resistance, while the simple parallel circuit in the original Overhauser's model underestimates the total interfacial resistance.

  9. Multi-Dielectric Brownian Dynamics and Design-Space-Exploration Studies of Permeation in Ion Channels.

    Science.gov (United States)

    Siksik, May; Krishnamurthy, Vikram

    2017-09-01

    This paper proposes a multi-dielectric Brownian dynamics simulation framework for design-space-exploration (DSE) studies of ion-channel permeation. The goal of such DSE studies is to estimate the channel modeling-parameters that minimize the mean-squared error between the simulated and expected "permeation characteristics." To address this computational challenge, we use a methodology based on statistical inference that utilizes the knowledge of channel structure to prune the design space. We demonstrate the proposed framework and DSE methodology using a case study based on the KcsA ion channel, in which the design space is successfully reduced from a 6-D space to a 2-D space. Our results show that the channel dielectric map computed using the framework matches with that computed directly using molecular dynamics with an error of 7%. Finally, the scalability and resolution of the model used are explored, and it is shown that the memory requirements needed for DSE remain constant as the number of parameters (degree of heterogeneity) increases.

  10. Growth, spectral, dielectric and antimicrobial studies on 4-piperidinium carboxylamide picrate crystals

    Science.gov (United States)

    Dhanabal, T.; Tharanitharan, V.; Amirthaganesan, G.; Dhandapani, M.

    2014-07-01

    Single crystal of 4-piperidinium carboxylamide picrate was grown by slow evaporation solution growth technique at ambient temperature. The average dimensions of grown crystal were 0.7 × 0.3 × 0.2 cm3. The solubility of the compound was analyzed using methanol and acetone. Optical property of the compound was ascertained by UV-visible absorption spectral study. The sharp and well defined Bragg peaks observed in the powder X-ray diffraction pattern confirm its crystallinity. The different kinds of protons and carbons in the compound were confirmed by 1H and 13C NMR spectral analyses. The presence of various functional groups in the compound was assigned through polarized Raman spectral study. The mechanical property of the crystal was measured by Vicker's microhardness test and the compound was found to be soft material. The dielectric constant and dielectric loss of the crystal decrease with increase in frequency. The antibacterial and antifungal activities of the crystal were studied by disc diffusion method and found that the compound shows good inhibition efficiency against various bacteria and fungi species.

  11. Studies on nitric oxide removal in simulated gas compositions under plasma-dielectric/catalytic discharges

    International Nuclear Information System (INIS)

    Rajanikanth, B.S.; Rout, Satyabrata

    2001-01-01

    Application of pulsed electrical discharges for gas cleaning is gaining prominence, mainly from the energy consideration point of view. This present paper presents recent work on applying the electrical discharge plasma technology for treating gaseous pollutants, in general, and nitric oxide, in particular, as this is one of the major contributors to air pollution. The present work focuses attention on pulsed electrical discharge technique for nitric oxide removal from simulated gas compositions and study of effect of packed dielectric pellets, with and without a coating of catalyst, on the removal process. Experiments were conducted in a cylindrical corona reactor energized by repetitive high voltage pulses. The effects of various parameters, viz. pulse voltage magnitude, pulse frequency, initial nitric oxide concentration and gas mixture composition on nitric oxide removal efficiency, are discussed. When the reactors were filled with different dielectric pellets like, barium titanate, alumina, and alumina coated with palladium catalyst, the improvement in nitric oxide removal efficiency is studied and discussed. The power dissipated in the reactor and the energy consumed per nitric oxide molecule removed was calculated. Further results and comparative study of various cases are presented in the paper

  12. Study of the aging processes in polyurethane adhesives using thermal treatment and differential calorimetric, dielectric, and mechanical techniques ; 1, identifying the aging processes ; 2, quantifying the aging effect

    CERN Document Server

    Althouse, L P

    1979-01-01

    Study of the aging processes in polyurethane adhesives using thermal treatment and differential calorimetric, dielectric, and mechanical techniques ; 1, identifying the aging processes ; 2, quantifying the aging effect

  13. Molecular dynamics of amorphous pharmaceutical fenofibrate studied by broadband dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    U. Sailaja

    2016-06-01

    Full Text Available Fenofibrate is mainly used to reduce cholesterol level in patients at risk of cardiovascular disease. Thermal transition study with the help of differential scanning calorimetry (DSC shows that the aforesaid active pharmaceutical ingredient (API is a good glass former. Based on our DSC study, the molecular dynamics of this API has been carried out by broadband dielectric spectroscopy (BDS covering wide temperature and frequency ranges. Dielectric measurements of amorphous fenofibrate were performed after its vitrification by fast cooling from a few degrees above the melting point (Tm=354.11 K to deep glassy state. The sample does not show any crystallization tendency during cooling and reaches the glassy state. The temperature dependence of the structural relaxation has been fitted by single Vogel–Fulcher–Tamman (VFT equation. From VFT fit, glass transition temperature (Tg was estimated as 250.56 K and fragility (m was determined as 94.02. This drug is classified as a fragile glass former. Deviations of experimental data from Kohlrausch–Williams–Watts (KWW fits on high-frequency flank of α-peak indicate the presence of an excess wing in fenofibrate. Based on Ngai׳s coupling model, we identified the excess wing as true Johari–Goldstein (JG process. Below the glass transition temperature one can clearly see a secondary relaxation (γ with an activation energy of 32.67 kJ/mol.

  14. Trapping-charging ability and electrical properties study of amorphous insulator by dielectric spectroscopy

    International Nuclear Information System (INIS)

    Mekni, Omar; Arifa, Hakim; Askri, Besma; Yangui, Béchir; Raouadi, Khaled; Damamme, Gilles

    2014-01-01

    Usually, the trapping phenomenon in insulating materials is studied by injecting charges using a Scanning Electron Microscope. In this work, we use the dielectric spectroscopy technique for showing a correlation between the dielectric properties and the trapping-charging ability of insulating materials. The evolution of the complex permittivity (real and imaginary parts) as a function of frequency and temperature reveals different types of relaxation according to the trapping ability of the material. We found that the space charge relaxation at low frequencies affects the real part of the complex permittivity ε ′ and the dissipation factor Tan(δ). We prove that the evolution of the imaginary part of the complex permittivity against temperature ε ″ =f(T) reflects the phenomenon of charge trapping and detrapping as well as trapped charge evolution Q p (T). We also use the electric modulus formalism to better identify the space charge relaxation. The investigation of trapping or conductive nature of insulating materials was mainly made by studying the activation energy and conductivity. The conduction and trapping parameters are determined using the Correlated Barrier Hopping (CBH) model in order to confirm the relation between electrical properties and charge trapping ability.

  15. A Molecular Dynamics Study of Crosslinked Phthalonitrile Polymers: The Effect of Crosslink Density on Thermomechanical and Dielectric Properties

    Directory of Open Access Journals (Sweden)

    Janel Chua

    2018-01-01

    Full Text Available In this work, molecular dynamics (MD and molecular mechanics (MM simulations are used to study well-equilibrated models of 4,4′-bis(3,4-dicyanophenoxybiphenyl (BPh–1,3-bis(3-aminophenoxybenzene (m-APB phthalonitrile (PN system with a range of crosslink densities. A cross-linking technique is introduced to build a series of systems with different crosslink densities; several key properties of this material, including thermal expansion, mechanical properties and dielectric properties are studied and compared with experimental results. It is found that the coefficient of linear thermal expansion predicted by the model is in good agreement with experimental results and indicative of the good thermal stability of the PN polymeric system. The simulation also shows that this polymer has excellent mechanical property, whose strength increases with increasing crosslink density. Lastly and most importantly, the calculated dielectric constant—which shows that this polymer is an excellent insulating material—indicates that there is an inverse relation between cross-linking density and dielectric constant. The trend gave rise to an empirical quadratic function which can be used to predict the limits of attainable dielectric constant for highly crosslinked polymer systems. The current computational work provides strong evidence that this polymer is a promising material for aerospace applications and offers guidance for experimental studies of the effect of cross-linking density on the thermal, mechanical and dielectric properties of the material.

  16. A Numerical Study of the Sour Gas Reforming in a Dielectric Barrier Discharge Reactor

    Directory of Open Access Journals (Sweden)

    Sajedeh Shahsavari

    2016-10-01

    Full Text Available In this paper, using a one-dimensional simulation model, the reforming process of sour gas, i.e. CH4, CO2, and H2S, to the various charged particles and syngas in a dielectric barrier discharge (DBD reactor is studied. An electric field is applied across the reactor radius, and thus a non-thermal plasma discharge is formed within the reactor. Based on the space-time coupled finite element method, the governing equations are solved, and the temporal and spatial profiles of different formed charged species from sour gas inside the plasma reactor are verified. It is observed that the electric field increases radially towards the cathode electrode. Moreover, the electron density growth rate at the radial positions closer to the cathode surface is smaller than the one in the anode electrode region. Furthermore, as time progresses, the positive ions density near the anode electrode is higher. In addition, the produced syngas density is mainly concentrated in the proximity of anode dielectric electrode.

  17. Study on the changes in blood plasma electroconductivity and dielectric constant in irradiated mammals

    International Nuclear Information System (INIS)

    Paskalev, Z.; Bancheva, E.

    1975-01-01

    Blood plasma electroconductivity and dielectric constant were measured in C57BL mice exposed to an uncontaminated gamma or neutron field or a mixed gamma-neutron field at a total dose of 5, 10, 15, 20, or 25 rad. Measurements were also made with blood plasma from Wistar rats given 200, 400, or 600 R X-rays. The results obtained revealed a characteristic pattern of radiation-induced changes in electroconductivity and dielectric constant, these end-points being indicative, respectively, or shifts in saline concentrations and in conformation of protein fractions of blood plasma. Analysis of the data showed that within a few days after exposure there were changes occurring in cellular and tissue water-salt metabolism, followed by enhancement or recovery to norm, depending on the dose. A possibility is thus rendered to use the blood plasma parameters studied as a test for detecting early shifts in cellular water-salt metabolism and in conformation of protein fractions at a time when no characteristic changes are yet to be observed in amounts of individual types of protein fractions from blood plasma of irradiated organisms. (author)

  18. Experimental study of the complex resistivity and dielectric constant of chrome-contaminated soil

    Science.gov (United States)

    Liu, Haorui; Yang, Heli; Yi, Fengyan

    2016-08-01

    Heavy metals such as arsenic and chromium often contaminate soils near industrialized areas. Soil samples, made with different water content and chromate pollutant concentrations, are often needed to test soil quality. Because complex resistivity and complex dielectric characteristics of these samples need to be measured, the relationship between these measurement results and chromium concentration as well as water content was studied. Based on soil sample observations, the amplitude of the sample complex resistivity decreased with an increase of contamination concentration and water content. The phase of complex resistivity takes on a tendency of initially decrease, and then increase with the increasing of contamination concentration and water content. For a soil sample with the same resistivity, the higher the amplitude of complex resistivity, the lower the water content and the higher the contamination concentration. The real and imaginary parts of the complex dielectric constant increase with an increase in contamination concentration and water content. Note that resistivity and complex resistivity methods are necessary to adequately evaluate pollution at various sites.

  19. Thermal and Dielectric Behavior Studies of Poly(Arylene Ether Sulfones with Sulfonated and Phosphonated Pendants

    Directory of Open Access Journals (Sweden)

    Shimoga D. Ganesh

    2016-01-01

    Full Text Available The present paper discusses the aspects of the synthesizing valeric acid based poly(ether sulfones with active carboxylic acid pendants (VALPSU from solution polymerization technique via nucleophilic displacement polycondensation reaction among 4,4′-dichlorodiphenyl sulfone (DCDPS and 4,4′-bis(4-hydroxyphenyl valeric acid (BHPA. The conditions necessary to synthesize and purify the polymer were investigated in some detail. The synthesized poly(ether sulfones comprise sulfone and ether linkages in addition to reactive carboxylic acid functionality; these active carboxylic acid functional groups were exploited to hold the phenyl sulphonic acid and phenyl phosphonic acid pendants. The phenyl sulphonic acid pendants in VALPSU were easily constructed by altering active carboxylic acid moieties by sulfanilic acid using N,N′-dicyclohexylcarbodiimide (DCC mediated mild synthetic route, whereas the latter one was built in two steps. Initially, polyphosphoric acid condensation with VALPSU by 4-bromoaniline and next straightforward palladium catalyzed synthetic route, in both of which acidic pendants are clenched by polymer backbone via amide linkage. Without impairing the primary polymeric backbone modified polymers were prepared by varying the stoichiometric ratios of respective combinations. All the polymers were physicochemically characterized and pressed into tablets; electrical contacts were established to study the dielectric properties. Finally, the influence of the acidic pendants on the dielectric properties was examined.

  20. Brain-computer interfacing under distraction: an evaluation study

    DEFF Research Database (Denmark)

    Brandl, Stephanie; Frølich, Laura; Höhne, Johannes

    2016-01-01

    Objective. While motor-imagery based brain-computer interfaces (BCIs) have been studied over many years by now, most of these studies have taken place in controlled lab settings. Bringing BCI technology into everyday life is still one of the main challenges in this field of research. Approach...

  1. A systematic study of the isothermal crystallization of the mono-alcohol n-butanol monitored by dielectric spectroscopy

    DEFF Research Database (Denmark)

    Jensen, Mikkel Hartmann; Hecksher, Tina; Niss, Kristine

    2015-01-01

    Isothermal crystallization of the mono-hydroxyl alcohol n-butanol was studied with dielectric spectroscopy in real time. The crystallization was carried out using two different sample cells at 15 temperatures between 120 K and 134 K. Crystallization is characterized by a decrease of the dielectric...... intensity. In addition, a shift in relaxation times to shorter times was observed during the crystallization process for all studied temperatures. The two different sample environments induced quite different crystallization behaviors, consistent and reproducible over all studied temperatures...... that a microscopic interpretation of crystallization measurements requires multiple probes, sample cells, and protocols....

  2. Synchrotron radiation studies of inorganic-organic semiconductor interfaces

    International Nuclear Information System (INIS)

    Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

    2003-01-01

    Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

  3. Performance of dielectric nanocomposites: matrix-free, hairy nanoparticle assemblies and amorphous polymer-nanoparticle blends.

    Science.gov (United States)

    Grabowski, Christopher A; Koerner, Hilmar; Meth, Jeffrey S; Dang, Alei; Hui, Chin Ming; Matyjaszewski, Krzysztof; Bockstaller, Michael R; Durstock, Michael F; Vaia, Richard A

    2014-12-10

    Demands to increase the stored energy density of electrostatic capacitors have spurred the development of materials with enhanced dielectric breakdown, improved permittivity, and reduced dielectric loss. Polymer nanocomposites (PNCs), consisting of a blend of amorphous polymer and dielectric nanofillers, have been studied intensely to satisfy these goals; however, nanoparticle aggregates, field localization due to dielectric mismatch between particle and matrix, and the poorly understood role of interface compatibilization have challenged progress. To expand the understanding of the inter-relation between these factors and, thus, enable rational optimization of low and high contrast PNC dielectrics, we compare the dielectric performance of matrix-free hairy nanoparticle assemblies (aHNPs) to blended PNCs in the regime of low dielectric contrast to establish how morphology and interface impact energy storage and breakdown across different polymer matrices (polystyrene, PS, and poly(methyl methacrylate), PMMA) and nanoparticle loadings (0-50% (v/v) silica). The findings indicate that the route (aHNP versus blending) to well-dispersed morphology has, at most, a minor impact on breakdown strength trends with nanoparticle volume fraction; the only exception being at intermediate loadings of silica in PMMA (15% (v/v)). Conversely, aHNPs show substantial improvements in reducing dielectric loss and maintaining charge/discharge efficiency. For example, low-frequency dielectric loss (1 Hz-1 kHz) of PS and PMMA aHNP films was essentially unchanged up to a silica content of 50% (v/v), whereas traditional blends showed a monotonically increasing loss with silica loading. Similar benefits are seen via high-field polarization loop measurements where energy storage for ∼15% (v/v) silica loaded PMMA and PS aHNPs were 50% and 200% greater than respective comparable PNC blends. Overall, these findings on low dielectric contrast PNCs clearly point to the performance benefits of

  4. Photoacoustic and dielectric spectroscopic studies of 4-dimethylamino-n-methyl-4-stilbazolium tosylate single crystal: An efficient terahertz emitter

    Science.gov (United States)

    Manivannan, M.; Martin Britto Dhas, S. A.; Jose, M.

    2016-12-01

    Bulk terahertz emitting single crystal of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) was synthesized by condensation method and grown by slow solvent evaporation technique from methanol. The structure and cell parameters of the grown crystals were derived from single crystal and powder X-ray diffraction analyses and the optical properties of the crystal were analyzed by UV-Vis Spectrophotometer. The presence of functional groups was identified by FTIR and FT-Raman spectroscopic studies. We demonstrated that in DAST crystal, the thermal transport properties such as thermal conductivity, thermal diffusivity and thermal effusivity are better than several well recognized standard materials using photoacoustic spectrophotometer. The dielectric measurement was made as a function of frequency (1 Hz-35 MHz) at different temperatures (30-200 °C). The dielectric constant and dielectric loss were found to be strongly dependent on temperature and frequency of the applied electric field. The semicircle in the cole-cole plot showed the presence of dielectric relaxation in the crystal with its diameter representing the resistance of the crystal. The resistivity and ac conductivity were calculated from the measured dielectric data.

  5. Theoretical study of the electromechanical efficiency of a loaded tubular dielectric elastomer actuator

    DEFF Research Database (Denmark)

    Rechenbach, Björn; Willatzen, Morten; Lassen, Benny

    2016-01-01

    The electromechanical efficiency of a loaded tubular dielectric elastomer actuator (DEA) is investigated theoretically. In previous studies, the external system, on which the DEA performs mechanical work, is implemented implicitly by prescribing the stroke of the DEA in a closed operation cycle....... Here, a more generic approach, modelling the external system by a frequency-dependent mechanical impedance which exerts a certain force on the DEA depending on its deformation, is chosen. It admits studying the dependence of the electromechanical efficiency of the DEA on the external system. A closed...... operation cycle is realized by exciting the DEA electrically by a sinusoidal voltage around a bias voltage. A detailed parametric study shows that the electromechanical efficiency is highly dependent on the frequency, amplitude, and bias of the excitation voltage and the mechanical impedance of the external...

  6. Scattering Study of Conductive-Dielectric Nano/Micro-Grained Single Crystals Based on Poly(ethylene glycol, Poly(3-hexyl thiophene and Polyaniline

    Directory of Open Access Journals (Sweden)

    Samira Agbolaghi

    2017-12-01

    Full Text Available Two types of rod-coil block copolymers including poly(3-hexylthiophene-block-poly(ethylene glycol (P3HT-b-PEG and PEG-block-polyaniline (PANI were synthesized using Grignard metathesis polymerization, Suzuki coupling, and interfacial polymerization. Afterward, two types of single crystals were grown by self-seeding methodology to investigate the coily and rod blocks in grafted brushes and ordered crystalline configurations. The conductive P3HT fibrillar single crystals covered by the dielectric coily PEG oligomers were grown from toluene, xylene, and anisole, and characterized by atomic force microscopy (AFM and grazing wide angle X-ray scattering (GIWAXS. Longer P3HT backbones resulted in folding, whereas shorter ones had a high tendency towards backbone lamination. The effective factors on folding of long P3HT backbones in the single crystal structures were the solvent quality and crystallization temperature. Better solvents due to decelerating the growth condition led to a higher number of foldings. Via increasing the crystallization temperature, the system decreased the folding number to maintain its stability. Poorer solvents also reflected a higher stacking in hexyl side chain and π-π stacking directions. The dielectric lamellar PEG single crystals sandwiched between the PANI nanorods were grown from amyl acetate, and analyzed using the interface distribution function (IDF of SAXS and AFM. The molecular weights of PANI and PEG blocks and crystallization temperature were focused while studying the grown single crystals.

  7. Thermoluminescence study of the trapped charge at an alumina surface electrode in different dielectric barrier discharge regimes

    Energy Technology Data Exchange (ETDEWEB)

    Ambrico, P F; Ambrico, M; Dilecce, G; De Benedictis, S [Consiglio Nazionale delle Ricerche, Istituto di Metodologie Inorganiche e dei Plasmi UOS Bari-c/o Dipartimento di Chimica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy); Colaianni, A [Dipartimento di Geologia e Geofisica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy); Schiavulli, L, E-mail: paolofrancesco.ambrico@cnr.i [Dipartimento Interateneo di Fisica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy)

    2010-08-18

    In this study, the charge trapping effect in alumina dielectric surfaces has been deeply investigated by means of a dedicated dielectric barrier discharge apparatus in different discharge regimes and gas mixtures. This work further validates our previous findings in the case of air discharges in a filamentary regime. Long lasting charge trapping has been evidenced by ex situ thermoluminescence characterizations of alumina dielectric barrier plates exposed to a plasma. The density of trapped surface charges was found to be higher in the glow discharge with respect to pseudo-glow and filamentary regimes, and for all regimes the minimum trap activation temperature was 390 K and the trap energy was less than or around 1 eV. This implies that in the case of glow discharges a higher reservoir of electrons is present. Also, the effect was found to persist for several days after running the discharge.

  8. Thermoluminescence study of the trapped charge at an alumina surface electrode in different dielectric barrier discharge regimes

    International Nuclear Information System (INIS)

    Ambrico, P F; Ambrico, M; Dilecce, G; De Benedictis, S; Colaianni, A; Schiavulli, L

    2010-01-01

    In this study, the charge trapping effect in alumina dielectric surfaces has been deeply investigated by means of a dedicated dielectric barrier discharge apparatus in different discharge regimes and gas mixtures. This work further validates our previous findings in the case of air discharges in a filamentary regime. Long lasting charge trapping has been evidenced by ex situ thermoluminescence characterizations of alumina dielectric barrier plates exposed to a plasma. The density of trapped surface charges was found to be higher in the glow discharge with respect to pseudo-glow and filamentary regimes, and for all regimes the minimum trap activation temperature was 390 K and the trap energy was less than or around 1 eV. This implies that in the case of glow discharges a higher reservoir of electrons is present. Also, the effect was found to persist for several days after running the discharge.

  9. Structural, dielectric and AC conductivity study of Sb2O3 thin film ...

    Indian Academy of Sciences (India)

    52

    However, to date, no reports have appeared on impedance spectroscopy, modulus behavior, electrical conductivity, dielectric relaxation and dielectric properties of crystalline Sb2O3 thin films. This paper deals for the first time with the frequency and temperature dependence of AC conductivity and complex electric modulus ...

  10. In-vitro Study of the Dielectric Effects of X-Ray on Whole Human Blood

    International Nuclear Information System (INIS)

    Bernal-Alvarado, Jesus; Sanchez, Antonio; Gutierrez, Gilberto; Sosa, Modesto; Hernandez, Francisco; Marquez, Sergio; Sotelo, Fernando; Palomares, Pascual

    2006-01-01

    A comparative study was done to investigate the effects of the x-radiation on the electric properties of whole human blood, from healthy people. The x-ray source was set to 55 kV and 75 kV, in order to investigate power level effects on the samples. Short and long time effects were also investigated. This experiment used a Solartron spectrometer to obtain the impedance response. No differences were found when samples were studied in the order of days (from one to five days), independently of the power level. Only in the case of 75 kV, in the power of the x-ray source, were detected significant differences between the dielectric properties of the blood, exposed to radiation, and its control sample, provided that the impedance spectrum were registered immediately after the exposure (after 15 or less minutes)

  11. XPS Studies of LSCF Interfaces after Cell Testing

    Directory of Open Access Journals (Sweden)

    Gianfranco DiGiuseppe

    2018-01-01

    Full Text Available The motivation of this investigation is to explore the possibility of using the depth profile capability of XPS to study interfaces after SOFC button cell testing. The literature uses XPS to study various cathode materials but has devoted little to the understanding of various cathode interfaces especially after testing. In this work, an SOFC button cell is first tested, and then, the LSCF cathode, barrier layer, and electrolyte are sputtered away to study the behavior of different interfaces. This work has shown that some elements have moved into other layers of the SOFC cell. It is argued that the migration of the elements is partly due to a redeposition mechanism after atoms are sputtered away, while the rest is due to interdiffusion between the SDC and YSZ layers. However, additional work is needed to better understand the mechanism by which atoms move around at different interfaces. The cell electrochemical performance is also discussed in some details but is not the focus.

  12. Dielectric Relaxation Studies of 2-Butoxyethanol with Aniline and Substituted Anilines Using Time Domain Reflectometry

    Directory of Open Access Journals (Sweden)

    P. Jeevanandham

    2014-01-01

    Full Text Available The complex dielectric spectra of 2-butoxyethanol with aniline and substituted anilines like aniline, o-chloroaniline, m-chloroaniline, o-anisidine and m-anisidine binary mixtures in the composition of different volumes of percent (0%, 25%, 50%, 75%, and 100% have been measured as a function of frequency between 10 MHz and 30 GHz at 298.15 K. The dielectric parameters like static dielectric constant ε0 and relaxation time τ have been obtained by using least square fit method. By using these parameters ε0,τ, effective Kirkwood correlation factor geff, corrective Kirkwood correlation factor gf, Bruggeman factor fB, excess dielectric constant εE, and excess inverse relaxation time 1/τE values are calculated and discussed to yield information on the dipolar alignment and molecular rotation of the binary liquid mixtures. From all the derived dielectric parameters, molecular interactions are interpreted through hydrogen bonding.

  13. Studies on the structural, optical and dielectric properties of samarium coordinated with salicylic acid single crystal

    Science.gov (United States)

    Singh, Harjinder; Slathia, Goldy; Gupta, Rashmi; Bamzai, K. K.

    2018-04-01

    Samarium coordinated with salicylic acid was successfully grown as a single crystal by low temperature solution technique using mixed solvent of methanol and water in equal ratio. Structural characterization was carried out by single crystal X-ray diffraction analysis and it crystallizes in centrosymmetric space group P121/c1. FTIR and UV-Vis-NIR spectroscopy confirmed the compound formation and help to determine the mode of binding of the ligand to the rare earth-metal ion. Dielectric constant and dielectric loss have been measured over the frequency range 100 Hz - 30MHz. The decrease in dielectric constant with increases in frequency is due to the transition from interfacial polarization to dipolar polarization. The small value of dielectric constant at higher frequency ensures that the crystal is good candidate for NLO devices. Dielectric loss represents the resistive nature of the material.

  14. Monodispersed fabrication and dielectric studies on ethylenediamine passivated α-manganese dioxide nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, A. Martin [Research and Development Centre, Bharathiar University, Coimbatore, Tamilnadu (India); Kumar, R. Thilak, E-mail: manojthilak@yahoo.com [Periyar Arts College, Cuddalore-607001, Tamilnadu (India)

    2016-09-15

    Highlights: • Monodispersed ethylenediamine (EDA) passivated α-MnO{sub 2} nanorods were fabricated by inexpensive wet chemical method. • FTIR analysis indicated that surface passivation is strongly influenced by the introduction of the organic ligand. • XRD and HR-SEM revealed the structure and morphology of the fabricated α-MnO{sub 2} nanorods with an average size of about 40 × 200 nm. • Dielectric studies pointed out that the fabricated α-MnO{sub 2} is semiconducting in nature with resistivity, ρ = 1.46 to 5.76 × 10{sup 3} Ωcm. • The optical energy gap for the fabricated α-MnO{sub 2} nanorods is found to be around 1.37 eV. - Abstract: In this present work, pure α-MnO{sub 2} nanorods were fabricated by the reduction of 0.2 m/L of KMnO{sub 4} with 0.2 m/L of Na{sub 2}S{sub 2}O{sub 3}·5H{sub 2}O and by passivating with the organic ligand Ethylenediamine (EDA). The structural, functional, morphological and chemical composition of the nanorods were investigated by X-Ray Diffractometer (XRD), Fourier Transform Infrared Spectrometer (FTIR), High Resolution Scanning Electron Microscope (HR-SEM) and Energy Dispersive X-Ray Spectrometry (EDX). The XRD analysis indicated high crystalline nature of the product and FTIR confirmed the contribution of the organic ligand in surface passivation. HR-SEM image revealed the morphology of the α-MnO{sub 2} nanorods with an average size of about 40 × 200 nm. EDX confirmed the presence of Mn and O in the material. UV–visible spectrophotometery was used to determine the absorption behavior of the nanorods and an indirect band gap of 1.37 eV was acquired by Taucplot. Dielectric studies were carried out using Broadband Dielectric Spectrometer(BDS) and the resistivity was found to be around the semiconductor range (ρ = 1.46 to 5.76 × 10{sup 3} Ωcm).

  15. Dielectric study of Poly(styrene- co -butadiene) Composites with Carbon Black, Silica, and Nanoclay

    KAUST Repository

    Vo, Loan T.

    2011-08-09

    Dielectric spectroscopy is used to measure polymer relaxation in styrene-butadiene rubber (SBR) composites. In addition to the bulk polymer relaxation, the SBR nanocomposites also exhibit a slower relaxation attributed to polymer relaxation at the polymer-nanoparticle interface. The glass transition temperature associated with the slower relaxation is used as a way to quantify the interaction strength between the polymer and the surface. Comparisons were made among composites containing nanoclay, silica, and carbon black. The interfacial relaxation glass transition temperature of SBR-clay nanocomposites is more than 80 °C higher than the SBR bulk glass transition temperature. An interfacial mode was also observed for SBR-silica nanocomposites, but the interfacial glass transition temperature of SBR-silica nanocomposite is somewhat lower than that of clay nanocomposites. An interfacial mode is also seen in the carbon black filled system, but the signal is too weak to analyze quantitatively. The interfacial polymer relaxation in SBR-clay nanocomposites is stronger compared to both SBR-carbon black and SBR-silica composites indicating a stronger interfacial interaction in the nanocomposites containing clay. These results are consistent with dynamic shear rheology and dynamic mechanical analysis measurements showing a more pronounced reinforcement for the clay nanocomposites. Comparisons were also made among clay nanocomposites using different SBRs of varying styrene concentration and architecture. The interfacial glass transition temperature of SBR-clay nanocomposites increases as the amount of styrene in SBR increases indicating that styrene interacts more strongly than butadiene with clay. © 2011 American Chemical Society.

  16. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  17. Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations

    Science.gov (United States)

    Yu, Sheng; Ran, Shunjie; Zhu, Hao; Eshun, Kwesi; Shi, Chen; Jiang, Kai; Gu, Kunming; Seo, Felix Jaetae; Li, Qiliang

    2018-01-01

    With the advances in two-dimensional (2D) transition metal dichalcogenides (TMDCs) based metal-oxide-semiconductor field-effect transistor (MOSFET), the interface between the semiconductor channel and gate dielectrics has received considerable attention due to its significant impacts on the morphology and charge transport of the devices. In this study, first principle calculations were utilized to investigate the strain effect induced by the interface between crystalline α-Al2O3 (0001)/h-MoS2 monolayer. The results indicate that the 1.3 nm Al2O3 can induce a 0.3% tensile strain on the MoS2 monolayer. The strain monotonically increases with thicker dielectric layers, inducing more significant impact on the properties of MoS2. In addition, the study on temperature effect indicates that the increasing temperature induces monotonic lattice expansion. This study clearly indicates that the dielectric engineering can effectively tune the properties of 2D TMDCs, which is very attractive for nanoelectronics.

  18. Cathodoluminescence study of Si/SiO2 interface structure

    International Nuclear Information System (INIS)

    Zamoryarskaya, M.V.; Sokolov, V.I.; Plotnikov, V.

    2004-01-01

    The structure of interface of thermal silicon oxide on p- and n-silicon with different content of activators (boron and phosphorus) was studied by using the method of the local cathodoluminescence (CL). The results of the CL study of the thick silicon oxide layers on silicon show that the content of the defects related with oxygen deficit decreases near the interface. In the same time, new bands in green and red range appear in CL spectra. The CL spectra of the layer with thickness 5-15 nm near interface are analogous to CL spectra of a composite of silicon nanoclusters and silicon oxide. The comparison of CL spectra of silicon oxide grown on p- and n-silicon shows that the film on p-silicon is characterized by higher concentration of silicon-deficit defects and silicon 'islands' near the surface. It may be the cause why the electrical hardness of silicon oxide on p-silicon is lower than the one on n-silicon. The integral electro-physical characteristics of silicon oxide also were measured. The bulk charge and the density of interface states of silicon oxide on p-silicon are higher than for oxide on n-silicon. The oxidization of n-silicon with nanostructure surface leads to the appearance of the CL bands related with oxygen deficit and silicon 'islands' in silicon oxide

  19. Study on guided-mode resonance characteristic of multilayer dielectric grating with broadband and wide using-angle

    International Nuclear Information System (INIS)

    Jian-Peng, Wang; Yun-Xia, Jin; Jian-Yong, Ma; Jian-Da, Shao; Zheng-Xiu, Fan

    2010-01-01

    Guided-mode resonance in a diffraction band of multilayer dielectric gratings may lead to a catastrophic result in laser system, especially in the ultrashort pulse laser system, so the inhibition of guided-mode resonance is very important. In this paper the characteristics of guided-mode resonance in multilayer dielectric grating are studied with the aim of better understanding the physical process of guided-mode resonance and designing a broadband multilayer dielectric grating with no guided-mode resonance. By employing waveguide theory, all guided-wave modes appearing in multilayer dielectric grating are found, and the incident conditions, separately, corresponding to each guided-wave mode are also obtained. The electric field enhancement in multilayer dielectric grating is shown obviously. Furthermore, from the detailed analyses on the guided-mode resonance conditions, it is found that the reduction of the grating period would effectively avoid the appearing of guided-mode resonance. And the expressions for calculating maximum periods, which ensure that no guided-mode resonance occurs in the requiring broad angle or wavelength range, are first reported. The above results calculated by waveguide theory and Fourier mode method are compared with each other, and they are coincident completely. Moreover, the method that relies on waveguide theory is more helpful for understanding the guided-mode resonance excited process and analyzing how each parameter affects the characteristic of guided-mode resonance. Therefore, the effects of multilayer dielectric grating parameters, such as period, fill factor, thickness of grating layer, et al., on the guided-mode resonance characteristic are discussed in detail based on waveguide theory, and some meaningful results are obtained. (classical areas of phenomenology)

  20. Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

    Directory of Open Access Journals (Sweden)

    Jianming Deng

    2016-03-01

    Full Text Available CaCu3Ti4−xYxO12 (0≤x≤0.12 ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The impedance and modulus tests both suggested the existence of two different relaxation behavior, which were attributed to bulk and grain boundary response. In addition, the conductivity and dielectric permittivity showed a step-like behavior under 405K. Meanwhile, frequency independence of dc conduction became dominant when above 405K. In CCTO ceramic, rare earth element Y3+ ions as an acceptor were used to substitute Ti sites, decreasing the concentration of oxygen vacancy around grain-electrode and grain boundary. The reason to the reduction of dielectric behavior in low frequencies range was associated with the Y doping in CCTO ceramic.

  1. Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

    International Nuclear Information System (INIS)

    Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

    2003-01-01

    Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

  2. RBS study of Ti/ZnO interface

    International Nuclear Information System (INIS)

    Rahman, A.M.A.; Narusawa, T.

    2008-01-01

    We have studied the interface stability of the Ti(overlayer)/ZnO(substrate) system. Ti thin film was grown on the Zn face of single crystal ZnO(0 0 0 1) substrate by the vacuum deposition technique. The Ti film thickness was typically 16 nm. Then the samples were annealed in air at 300 and 400 deg. C for 15 min, respectively. The deposition and annealing effects on the interface structure were investigated with Rutherford backscattering and channeling spectroscopy using 2 MeV He + ion beam. After Ti deposition the minimum yield from the ZnO substrate increased from 2% to 7%. This suggests severe damage caused by deposition, i.e. the interface reaction between Ti and ZnO (even at room temperature). A significant amount of Zn (approximately 6.4 x 10 16 atoms/cm 2 ) moved onto the surface after post-annealing at 400 deg. C. Since Ti has a stronger tendency to react with O than Zn, it is expected that Ti reacts with substrate oxygen leaving behind free Zn atoms, which can easily migrate onto the surface. We discuss how the Ti/ZnO interface reaction in detail, and seek to find another good metallic contact for ZnO devices, which are attracting much attention recently for practical applications as well as scientific aspects

  3. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    Science.gov (United States)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  4. Study of solute segregation at interfaces using Auger electron spectroscopy

    International Nuclear Information System (INIS)

    White, C.L.

    1984-01-01

    Interfacial segregation, often confined to within a few atomic distances of the interface, can strongly influence the processing and properties of metals and ceramics. The thinness of such solute-enriched regions can cause them to be particularly suitable for study using surface sensitive microanalytical techniques such as Auger electron spectroscopy (AES). The application of AES to studies of interfacial segregation in metals and ceramics is briefly reviewed, and several examples are presented. 43 references, 14 figures

  5. Microscopic theoretical study of frequency dependent dielectric constant of heavy fermion systems

    Science.gov (United States)

    Shadangi, Keshab Chandra; Rout, G. C.

    2017-05-01

    The dielectric polarization and the dielectric constant plays a vital role in the deciding the properties of the Heavy Fermion Systems. In the present communication we consider the periodic Anderson's Model which consists of conduction electron kinetic energy, localized f-electron kinetic energy and the hybridization between the conduction and localized electrons, besides the Coulomb correlation energy. We calculate dielectric polarization which involves two particle Green's functions which are calculated by using Zubarev's Green's function technique. Using the equations of motion of the fermion electron operators. Finally, the temperature and frequency dependent dielectric constant is calculated from the dielectric polarization function. The charge susceptibility and dielectric constant are computed numerically for different physical parameters like the position (Ef) of the f-electron level with respect to fermi level, the strength of the hybridization (V) between the conduction and localized f-electrons, Coulomb correlation potential temperature and optical phonon wave vector (q). The results will be discussed in a reference to the experimental observations of the dielectric constants.

  6. Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

    NARCIS (Netherlands)

    Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

    2017-01-01

    A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750?cm-1 to unravel the

  7. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  8. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  9. Experimental study of dielectric characteristics of rocks in a high-frequency field

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, S.

    1982-01-01

    Dielectric permeability (epsilon) as an electrical property of rocks has been used in recent years as the new parameter of well logging. Consequently a study was made of the dependence of epsilon of rocks on different factors. It was found that epsilon of rocks depends not only on minerals contained in them, their properties and distribution, but also on the frequency of the field, temperature and content of the mineralized water in the bed. It was indicated that for sedimentary rocks with low content of clay, their epsilon depends mainly on the content of water, and between epsilon and water saturation there is an approximately rectilinear relationship. The epsilon of dry and wet rocks differs 3-5-fold, so that with the help of epsilon one can determine flooding of the bed. Since epsilon increases with a rise in the content of clay in the rocks, with dielectric logging of the flooded bed it is necessary to make the corresponding correction. Under conditions of frequency of the field 60 Mz, epsilon in the NaCl solution decreases with an increase in mineralization, but the epsilon of the soda-containing rocks increases with an increase in mineralization. However, with mineralization less than 1 x 10/sup -2/, its influence on epsilon does not exceed 10%. The epsilon of water containing rocks diminishes with a rise in temperature. In addition, the epsilon of rocks drops with an increase in field frequency. With an increase in frequency, there is a decrease in influence of different factors (mineralization, distribution of minerals, content of clay, etc.) on the epsilon of rocks. At high frequencies, a distinct relationship is observed only between the epsilon and the water content of the rocks. Consequently it is expedient to improve the frequency of measurement to reveal the flooded beds. According to the data of dispersion of epsilon with different frequencies, one can determine the content of quality of the bed using electromagnetic logging.

  10. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-04-01

    The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.

  11. Dielectric dispersion, relaxation dynamics and thermodynamic studies of Beta-Alanine in aqueous solutions using picoseconds time domain reflectometry

    Science.gov (United States)

    Vinoth, K.; Ganesh, T.; Senthilkumar, P.; Sylvester, M. Maria; Karunakaran, D. J. S. Anand; Hudge, Praveen; Kumbharkhane, A. C.

    2017-09-01

    The aqueous solution of beta-alanine characterised and studied by their dispersive dielectric properties and relaxation process in the frequency domain of 10×106 Hz to 30×109 Hz with varying concentration in mole fractions and temperatures. The molecular interaction and dielectric parameters are discussed in terms of counter-ion concentration theory. The static permittivity (ε0), high frequency dielectric permittivity (ε∞) and excess dielectric parameters are accomplished by frequency depended physical properties and relaxation time (τ). Molecular orientation, ordering and correlation factors are reported as confirmation of intermolecular interactions. Ionic conductivity and thermo dynamical properties are concluded with the behaviour of the mixture constituents. Solute-solvent, solute-solute interaction, structure making and breaking abilities of the solute in aqueous medium are interpreted. Fourier Transform Infrared (FTIR) spectra of beta- alanine single crystal and liquid state have been studied. The 13C Nuclear Magnetic Resonance (NMR) spectral studies give the signature for resonating frequencies and chemical shifts of beta-alanine.

  12. Dielectric properties of nanosilica filled epoxy nanocomposites

    Indian Academy of Sciences (India)

    M G Veena

    Polymer nanocomposites are the 21st century engineering materials with wide range of ... the electronic industry for dielectric materials in electrical insulation ..... be ascribed to the interface barriers and chain entangle- ments towards the ...

  13. Study of Ag and PE interface after plasma treatment

    Czech Academy of Sciences Publication Activity Database

    Macková, Anna; Malinský, Petr; Bočan, Jiří; Švorčík, V.; Pavlík, J.; Strýhal, Z.; Sajdl, P.

    2008-01-01

    Roč. 5, č. 4 (2008), s. 964-967 ISSN 1862-6351. [9th International workshop on plasma based ion implantation and deposition. Leipzig, 02.09.2007-06.09.2007] R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : RBS and AFM study * metal-polymer interface * plasma treatment Subject RIV: JJ - Other Materials

  14. Dielectric properties study of surface engineered nanoTiO2/epoxy ...

    Indian Academy of Sciences (India)

    2018-02-02

    Feb 2, 2018 ... 2Department of Physics, Sri Sathya Sai Institute of Higher Learning, Vidyagiri, ... the surface modifiers were not successful in obtaining the improved dielectric .... lent Technologies Inc., Santa Clara, CA) at a frequency range.

  15. Dielectric nanoresonators for light manipulation

    Science.gov (United States)

    Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

    2017-07-01

    Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

  16. Dielectric properties of Zea mays kernels - studies for microwave power processing applications

    Energy Technology Data Exchange (ETDEWEB)

    Surducan, Emanoil; Neamtu, Camelia; Surducan, Vasile, E-mail: emanoil.surducan@itim-cj.r [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath, 400293 Cluj-Napoca (Romania)

    2009-08-01

    Microwaves absorption in biological samples can be predicted by their specific dielectrical properties. In this paper, the dielectric properties ({epsilon}' and {epsilon}'') of corn (Zea mays) kernels in the 500 MHz - 20 GHz frequencies range are presented. A short analysis of the microwaves absorption process is also presented, in correlation with the specific thermal properties of the samples, measured by simultaneous TGA-DSC method.

  17. Numerical study of the influence of dielectric tube on propagation of atmospheric pressure plasma jet based on coplanar dielectric barrier discharge

    Science.gov (United States)

    Haixin, HU; Feng, HE; Ping, ZHU; Jiting, OUYANG

    2018-05-01

    A 2D fluid model was employed to simulate the influence of dielectric on the propagation of atmospheric pressure helium plasma jet based on coplanar dielectric barrier discharge (DBD). The spatio-temporal distributions of electron density, ionization rate, electrical field, spatial charge and the spatial structure were obtained for different dielectric tubes that limit the helium flow. The results show that the change of the relative permittivity of the dielectric tube where the plasma jet travels inside has no influence on the formation of DBD itself, but has great impact on the jet propagation. The velocity of the plasma jet changes drastically when the jet passes from a tube of higher permittivity to one of lower permittivity, resulting in an increase in jet length, ionization rate and electric field, as well as a change in the distribution of space charges and discharge states. The radius of the dielectric tube has a great influence on the ring-shaped or solid bullet structure. These results can well explain the behavior of the plasma jet from the dielectric tube into the ambient air and the hollow bullet in experiments.

  18. A PIV Study of Drop-interface Coalescence with Surfactants

    Science.gov (United States)

    Weheliye, Weheliye Hashi; Dong, Teng; Angeli, Panagiota

    2017-11-01

    In this work, the coalescence of a drop with an aqueous-organic interface was studied by Particle Image Velocimetry (PIV). The effect of surfactants on the drop surface evolution, the vorticity field and the kinetic energy distribution in the drop during coalescence were investigated. The coalescence took place in an acrylic rectangular box with 79% glycerol solution at the bottom and Exxsol D80 oil above. The glycerol solution drop was generated through a nozzle fixed at 2cm above the aqueous/oil interface and was seeded with Rhodamine particles. The whole process was captured by a high-speed camera. Different mass ratios of non-ionic surfactant Span80 to oil were studied. The increase of surfactant concentration promoted deformation of the interface before the rupture of the trapped oil film. At the early stages after film rupture, two counter-rotating vortices appeared at the bottom of the drop which then travelled to the upper part. The propagation rates, as well as the intensities of the vortices decreased at high surfactant concentrations. At early stages, the kinetic energy was mainly distributed near the bottom part of the droplet, while at later stages it was distributed near the upper part of the droplet. Programme Grant MEMPHIS, Chinese Scholarship Council (CSC).

  19. Study of the physical mechanisms involved in the femtosecond laser optical breakdown of dielectric materials

    International Nuclear Information System (INIS)

    Mouskeftaras, Alexandros

    2013-01-01

    We have carried out detailed time resolved experimental studies of the mechanism of electron excitation-relaxation, when an ultrashort (60 fs -1 ps) laser (UV and IR) pulse interacts with a wide band gap dielectric material. The studies cover a range of different dielectric materials and the investigated regimes span from nondestructive ionization of the material at the low power end (∼TW/cm 2 ) to ablative domain at a higher laser power (∼10 TW/cm 2 ). This gives fundamental insight into the understanding of the laser damaging process taking place under our irradiation conditions. The usage of time-resolved spectral interferometry technique allows to directly measure the electron density of the irradiated material under different excitation conditions and hence leads to quantification of the process. The measurements, carried out at the optical breakdown threshold utilizing different pulse durations, raise questions regarding the usage of critical excitation density as a universal ablation criterion. A new criterion related to the exchanged energy is proposed. Additionally, the use of an experimental setup implementing a double pump pulse allows the identification of different excitation mechanisms taking place at time scales of the order of the pulse duration used. Electronic avalanche is observed in some materials (SiO 2 , NaCl) while this is not the case for others (Al 2 O 3 , MgO). These differences are discussed in detail. Next, we measure the energy spectrum of excited electrons with a complementary technique: the photoemission spectroscopy. These results allow us on one hand to show a crossed effect between the two 'pump' pulses and on the other hand to measure electron relaxation characteristic times, as a function of their kinetic energy. Finally, a morphological study of craters resulting from ablation in the case of a single pulse has been carried out for different irradiation parameters: number of shots, energy and pulse duration. This work has

  20. Characterization and study of dielectric and electrical properties of CaBi4Ti4O_1_5 (CBT) added with Bi_2O_3

    International Nuclear Information System (INIS)

    Freitas, D.B.; Campos Filho, M.C.; Sales, J.C.; Silva, P.M.O.; Sombra, A.S.

    2011-01-01

    The ceramic perovskite CaBi_4Ti_4O_1_5 (CBT) of space group A21am, Aurivillius family with deficiency A_5B_4O_1_5 cation has been prepared by solid state method in a planetary ball mill of high energy. The reagents samples were ground and calcined and then added with Bi_2O_3 (2% wt.) This work aims to characterize by X-ray diffraction to study the electrical properties and dielectric properties of (CBT). The x-ray diffraction revealed the formation of single orthorhombic phase. As for the dielectric properties (dielectric constant and dielectric loss) were measured at 30 deg C to 450 deg C, through which can be verified the presence of thermally activated processes. This phase has properties very relevant for possible use in capacitive devices, miniaturized filters, dielectric resonators antennas and oscillators. (author)

  1. First principles studies of complex oxide surfaces and interfaces

    International Nuclear Information System (INIS)

    Noguera, Claudine; Finocchi, Fabio; Goniakowski, Jacek

    2004-01-01

    Oxides enter our everyday life and exhibit an impressive variety of physical and chemical properties. The understanding of their behaviour, which is often determined by the electronic and atomic structures of their surfaces and interfaces, is a key question in many fields, such as geology, environmental chemistry, catalysis, thermal coatings, microelectronics, and bioengineering. In the last decade, first principles methods, mainly those based on the density functional theory, have been frequently applied to study complex oxide surfaces and interfaces, complementing the experimental observations. In this work, we discuss some of these contributions, with emphasis on several issues that are especially important when dealing with oxides: the local electronic structure at interfaces, and its connection with chemical reactivity; the charge redistribution and the bonding variations, in relation to screening properties; and the possibility of bridging the gap between model and real systems by taking into account the chemical environments and the effect of finite temperatures, and by performing simulations on systems of an adequate (large) size

  2. [Study on A White-Eye Pattern in Dielectric Barrier Discharge by Optical Emission Spectrum].

    Science.gov (United States)

    Zhu, Ping; Dong, Li-fang; Yang, Jing; Zhang, Yu; Zhang, Chao

    2015-06-01

    The white-eye pattern was firstly observed and investigated in a dielectric barrier discharge system in the mixture of argon and air whose content can be varied whenever necessary, and the study shows that the white-eye cell is an interleaving of three different hexagonal sub-structures: the center spot, the halo, and the ambient spots. The white-eye pattern is observed at a lower applied voltage. In this experiment, the heat capacity of water is high so that the water in water electrode is good at absorbing heat. In the process of pattern discharging the gas gap didn't increase its temperature, and the discharging phenomenon of this pattern has not changed. The temperature of the water electrodes almost keeps unchanged during the whole experiment, which is advantageous for the long-term stable measurement. Pictures recorded by ordinary camera with long exposure time in the same argon content condition show that the center spot, the halo, and the ambient spots og the white-eye pattern have different brightness, which may prove that their plasma states are different. And, it is worth noting that there are obvious differences of brightness not only on the center spot, the halo, and the ambient spots at the same pressure but also at the different pressure, which shows that its plasma state also changed with the variation of the pressure. Given this, in this experiment plasma temperatures of the central spot, halo, and ambient spots in a white-eye pattern at different gas pressure were studied by using optical emission spectra. The molecular vibration temperature is investigated by the emission spectra of nitrogen band of second positive system ( C3Πu --> B3Πg ). The electron excitation temperature is researched by the relative intensity ratio method of spectral lines of Ar I 763. 51 nm (2P6 --> 1S5) and Ar I 772. 42 nm (2P2 --> 1S3). The electronic density is investigated by the broadening of spectral line 696.5 nm. Through the analysis of experimental results, it

  3. Dielectric, optical and mechanical studies of phenolic polyene OH1 organic electrooptic crystal

    Science.gov (United States)

    Bharath, D.; Kalainathan, S.

    2014-11-01

    2-{3-[2-(4-Hydroxyphenyl) vinyl]-5, 5-dimethylcyclo-hex-2-en-1-ylidene}malononitrile (OH1) phenolic locked polyene organic material has been synthesized by the Knoevenagel condensation method. OH1 single crystals were grown in methanol by a slow evaporation method. In order to avoid the multinucleation and reduce the metastable zone width, phosphoric acid is added in different concentrations. The linear optical property of OH1 crystal has been studied using UV-vis-NIR spectroscopy in the wavelength range 190-1100 nm and optical constants are calculated theoretically. The magnitude of nonlinear refractive index (10-12 m2/W), nonlinear absorption (10-6 m/W) and third order nonlinear susceptibility (10-6 esu) has been studied using a Z-scan technique. Dielectric property of OH1 crystal has been studied in frequency range 50 Hz-5 MHz. Photoluminescence spectrum was recorded using a xenon lamp in the range of 450-700 nm. Laser optical damage threshold of OH1 crystal was obtained (0.62 GW/cm2) using a pulsed Nd-YAG laser (1064 nm) of repetition rate 10 ns.

  4. Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

    2016-04-01

    We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

  5. Liquid argon dielectric breakdown studies with the MicroBooNE purification system

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, R.; Carls, B.; James, C.; Johnson, B.; Jostlein, H.; Lockwitz, S.; Lundberg, B.; Raaf, J. L.; Rameika, R.; Rebel, B.; Zeller, G. P.; Zuckerbrot, M.

    2014-11-01

    The proliferation of liquid argon time projection chamber detectors makes the characterization of the dielectric properties of liquid argon a critical task. To improve understanding of these properties, a systematic study of the breakdown electric field in liquid argon was conducted using a dedicated cryostat connected to the MicroBooNE cryogenic system at Fermilab. An electrode sphere-plate geometry was implemented using spheres with diameters of 1.3 mm, 5.0 mm, and 76 mm. The MicroBooNE cryogenic system allowed measurements to be taken at a variety of electronegative contamination levels ranging from a few parts-per-million to tens of parts-per-trillion. The cathode-anode distance was varied from 0.1 mm to 2.5 cm. The results demonstrate a geometric dependence of the electric field strength at breakdown. This study is the first time that the dependence of the breakdown field on stressed cathode area has been shown for liquid argon.

  6. A numerical study on charging mechanism in leaky dielectric liquids inside the electrostatic atomizers

    Science.gov (United States)

    Kashir, Babak; Perri, Anthony; Yarin, Alexander L.; Mashayek, Farzad

    2017-11-01

    The charging of leaky dielectric liquids inside an electrostatic atomizer is studied numerically by developed codes based on OpenFOAM platform. Faradaic reactions are taken into account as the electrification mechanism. The impact of ionic finite size (steric terms) in high voltages is also investigated. The fundamental electrohydrodynamic understanding of the charging mechanism is aimed in the present work where the creation of polarized near-electrode layer and the movement of charges due to hydrodynamic flow are studied in conjunction with the solution of the Navier-Stokes equations. The case of a micro channel electrohydrodynamic flow subjected to two electrodes of the opposite polarity is considered as an example, with the goal to predict the resulting net charge at the exit. Even though the electrodes constitute a small portion of the channel wall, otherwise insulated, it is indicated that the channel length plays a dominant role in the discharging net charge. The ionic fluxes at the electrode surfaces are accounted through the Frumkin-Butler-Volmer relation found from the concurrent in-house experimental investigations. This projects was supported by National science Foundation (NSF) GOALI Grant CBET-1505276.

  7. Electromigration study of Al thin films deposited on low dielectric polyimide and SiO sub 2 ILD

    CERN Document Server

    Eun, B S

    1999-01-01

    The electromigration characteristics of Al-1 %Si-0.5 %Cu films deposited onto three kinds of polyimides (PI-2734, PI-2611, and BG-2480) and onto SiO sub 2 prepared by low pressure chemical vapor deposition have been investigated. The Al lines deposited onto SiO sub 2 showed about a one-order higher electromigration lifetime than those deposited onto polyimide interlayer dielectrics (ILDs). The electromigration characteristics degraded as the polyimide thickness increased. Joule heat which accumulated at the Al/polyimide interface was the main cause of the decrease in the electromigration reliability because the thermal conductivity of the polyimides was about one order lower than that of SiO sub 2.

  8. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  9. Dielectric haloscopes: sensitivity to the axion dark matter velocity

    Energy Technology Data Exchange (ETDEWEB)

    Millar, Alexander J.; Redondo, Javier; Steffen, Frank D., E-mail: millar@mpp.mpg.de, E-mail: jredondo@unizar.es, E-mail: steffen@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany)

    2017-10-01

    We study the effect of the axion dark matter velocity in the recently proposed dielectric haloscopes, a promising avenue to search for well-motivated high mass (40–400 μeV) axions. We describe non-zero velocity effects for axion-photon mixing in a magnetic field and for the phenomenon of photon emission from interfaces between different dielectric media. As velocity effects are only important when the haloscope is larger than about 20% of the axion de Broglie wavelength, for the planned MADMAX experiment with 80 dielectric disks the velocity dependence can safely be neglected. However, an augmented MADMAX or a second generation experiment would be directionally sensitive to the axion velocity, and thus a sensitive measure of axion astrophysics.

  10. Study and simulation of human interface; Human interface kenkyu to simulation

    Energy Technology Data Exchange (ETDEWEB)

    Nishitani, H. [Nara Institute of Science and Technology, Nara (Japan)

    1996-10-05

    Validation researches have begun about the interrelationship between systems and human beings using a virtual-reality plant environment. This article introduces some recent studies about the human interface in an operation control system in a virtual-reality environment. The evaluation of a system from the viewpoint of ease of use is called a usability test, to which a psychological protocol analysis is applied for finding out problematic points by carefully observing the operator actually operating the system. For instance, in a boiler plant simulator constructed for DCS training, the operator is given some tasks, such as the prediction as to how a certain event will develop, probing of the cause of anomalies, and execution of related operations. Video cameras are installed at various spots for the minute observation of facial expressions and behavior of the operator, and the operator`s recognition, thought, behavior, and utterances, expressed by the operator facially or verbally, are recorded and analyzed, and the results are utilized for system improvement and operator training. 3 refs., 2 figs.

  11. Structural, morphological and dielectric studies of zirconium substituted CoFe2O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    S. Anand

    2017-12-01

    Full Text Available In this work, the influence of zirconium substitution in cubic spinel nanocrystalline CoFe2O4 on the structural, morphological and dielectric properties are reported. Zirconium substituted cobalt ferrite Co1-xZrxFe2O4 (x = 0.7 nanoparticles were synthesized by sol-gel route. The structural and morphological investigations using powder X-ray diffraction and high resolution scanning electron microscope (HRSEM analysis are reported. Scherrer plot, Williamson–Hall analysis and Size-strain plot method were used to calculate the crystallite size and lattice strain of the samples. High purity chemical composition of the sample was confirmed by energy dispersive X-ray analysis. The atoms vibration modes of as synthesized nanoparticles were recorded using Fourier transform infrared (FTIR spectrometer in the range of 4000–400 cm-1. The temperature-dependent dielectric properties of zirconium substituted cobalt ferrite nanoparticles were also carried out. Relative dielectric permittivity, loss tangent and AC conductivity were measured in the frequency range 50 Hz to 5 MHz at temperatures between 323 K and 473 K. The dielectric constant and dielectric loss values of the sample decreased with increasing in the frequency of the applied signal.

  12. Optical and dielectric studies of KH2PO4 crystal influenced by organic ligand of citric acid and l-valine: A single crystal growth and comparative study

    Directory of Open Access Journals (Sweden)

    Mohd Anis

    Full Text Available In the present study pure, citric acid (CA and l-valine (LV doped potassium dihydrogen phosphate (KDP crystals have been grown with the aim to investigate the nonlinear optical applications facilitated by UV–visible, third order nonlinear optical (TONLO and dielectric properties. The structural parameters of grown crystals have been confirmed by single crystal X-ray diffraction analysis. The enhancement in optical transparency of KDP crystal due to addition of CA and LV has been examined within 200–900 nm by means of UV–visible spectral analysis. In addition, the transmittance data have been used to evaluate the effect of dopants on reflectance, refractive index and extinction coefficient of grown crystals in the visible region. The Z-scan analysis has been performed at 632.8 nm to identify the nature of photoinduced nonlinear refraction and nonlinear absorption in doped KDP crystals. The influence of π-bonded ligand of dopant CA and LV on TONLO susceptibility (χ3, refractive index (n2 and absorption coefficient (β of KDP crystals has been evaluated to discuss laser assisted device applications. The decrease in dielectric constant and dielectric loss of KDP crystal due to addition of CA and LV has been explored using the temperature dependent dielectric studies. Keywords: Crystal growth, Nonlinear optical materials, UV–visible studies, Z-scan analysis, Dielectric studies

  13. A quantitative approach for pesticide analysis in grape juice by direct interfacing of a matrix compatible SPME phase to dielectric barrier discharge ionization-mass spectrometry.

    Science.gov (United States)

    Mirabelli, Mario F; Gionfriddo, Emanuela; Pawliszyn, Janusz; Zenobi, Renato

    2018-02-12

    We evaluated the performance of a dielectric barrier discharge ionization (DBDI) source for pesticide analysis in grape juice, a fairly complex matrix due to the high content of sugars (≈20% w/w) and pigments. A fast sample preparation method based on direct immersion solid-phase microextraction (SPME) was developed, and novel matrix compatible SPME fibers were used to reduce in-source matrix suppression effects. A high resolution LTQ Orbitrap mass spectrometer allowed for rapid quantification in full scan mode. This direct SPME-DBDI-MS approach was proven to be effective for the rapid and direct analysis of complex sample matrices, with limits of detection in the parts-per-trillion (ppt) range and inter- and intra-day precision below 30% relative standard deviation (RSD) for samples spiked at 1, 10 and 10 ng ml -1 , with overall performance comparable or even superior to existing chromatographic approaches.

  14. 2008 ULTRASONIC BENCHMARK STUDIES OF INTERFACE CURVATURE--A SUMMARY

    International Nuclear Information System (INIS)

    Schmerr, L. W.; Huang, R.; Raillon, R.; Mahaut, S.; Leymarie, N.; Lonne, S.; Song, S.-J.; Kim, H.-J.; Spies, M.; Lupien, V.

    2009-01-01

    In the 2008 QNDE ultrasonic benchmark session researchers from five different institutions around the world examined the influence that the curvature of a cylindrical fluid-solid interface has on the measured NDE immersion pulse-echo response of a flat-bottom hole (FBH) reflector. This was a repeat of a study conducted in the 2007 benchmark to try to determine the sources of differences seen in 2007 between model-based predictions and experiments. Here, we will summarize the results obtained in 2008 and analyze the model-based results and the experiments.

  15. An experimental study of dielectric dispersion in porous media and its dependence on pore geometry

    Energy Technology Data Exchange (ETDEWEB)

    Haslund, E.

    1996-12-31

    Understanding water saturated composite media are important in the study of oil reservoirs. This doctoral thesis discusses measurements of the frequency dependent permittivity and conductivity of water saturated porous glass specimens. The experiments are designed to investigate the dispersion resulting from the geometrical properties of the pore space. Measurements are presented of the effective complex dielectric constant of water saturated porous glass specimens for frequencies below 13 MHz. The specimens are made from sintered glass spheres, and in some specimens thin plates are mixed in with the spheres. Low-conductivity water is used to saturate the pore space in order to scale the frequency range of the Maxwell-Wagner dispersion into the measurement range. The experiments are compared with two different effective medium approaches. One approach is the Mendelson and Cohen theory with randomly oriented spheroidal grains in addition to spherical grains, the other the Local porosity theory due to Hilfer. Both theories were found to be in good agreement with the experimental observations. 175 refs., 59 figs., 1 table

  16. A Simplified Numerical Study of the Kr/Cl2 Plasma Chemistry in Dielectric Barrier Discharge

    International Nuclear Information System (INIS)

    Bachir, N. Larbi Daho; Belasri, A.

    2013-01-01

    In this paper, the generation of excimers and exciplexe radiation in mixtures of rare gas with halogen by homogeneous dielectric barrier discharge (DBD) is investigated. The typical characteristics of an excilamp based on KrCl* exciplexe molecules and the kinetic processes for the formation and the decay of this molecules in the Kr/Cl 2 mixture are studied. The computer model developed is based on the Kr/Cl 2 mixture chemistry, the equivalent electric circuit and the Boltzmann equations. The importance in the kinetic processes of some species such as the metastable state of Krypton (Kr*( 3 P 0,2 )) and the negative ion of chloride (Cl − ) is considered. The results illustrate the time variations of charged species (n e , Kr + , Cl − , Cl + , Cl + 2 , Kr + 2 ), excited atoms and molecules (Kr*( 3 P 0,2 ), Kr*( 3 P 1 ), Cl*, Cl* 2 ), the excimers (Kr* 2 , KrCl*(B), KrCl*(C), Kr 2 Cl*) and the UV photon concentrations (in 222 nm, 235 nm, 258 nm and 325 nm range). The effects of chlorine concentration and the total gas pressure in the Kr-Cl 2 discharge on the electric parameters and radiation emissions are investigated. (low temperature plasma)

  17. Experimental study of surface dielectric barrier discharge in air and its ozone production

    International Nuclear Information System (INIS)

    Pekárek, Stanislav

    2012-01-01

    For surface dielectric barrier discharge in air we studied the effects of frequency of the driving voltage on dissipated power, asymmetry of amplitudes of the discharge voltage, discharge UV emission, ozone production, ozone production of the discharge with TiO 2 and of the discharge in magnetic field. We found that for a particular voltage the dissipated power is higher for the frequency of the driving voltage of 26.3 kHz than for the frequency of 10.9 kHz; peak values of the positive half-periods of the discharge voltage are higher than peak values of the negative half-periods; intensity of the discharge UV emissions for wavelengths of 320-420 nm is for both frequencies a linear function of power; maximum ozone concentration for the frequency of the driving voltage of 26.3 kHz is obtained with smaller power than for the frequency of 10.9 kHz; placement of TiO 2 particles into the discharge chamber increases for both frequencies of the driving voltage maximum ozone concentration produced by the discharge and for the frequency of the driving voltage of 26.3 kHz increases ozone production yield. Finally, there is no observable effect of magnetic field on concentration of ozone produced by the discharge as well as on production yield. (paper)

  18. Ion transport study in polymer-nanocomposite films by dielectric spectroscopy and conductivity scaling

    Science.gov (United States)

    Tripathi, Namrata; Thakur, Awalendra K.; Shukla, Archana; Marx, David T.

    2015-07-01

    The dielectric and conductivity response of polymer nanocomposite electrolytes (films of PMMA4LiClO4 dispersed with nano-CeO2 powder) have been investigated. The dielectric behavior was analyzed via the dielectric permittivity (ε‧) and dissipation factor (tan δ) of the samples. The analysis has shown the presence of space charge polarization at lower frequencies. The real part of ac conductivity spectra of materials obeys the Jonscher power law. Parameters such as dc conductivity, hopping rate, activation energies and the concentration of charge carriers were determined from conductivity data using the Almond West formalism. It is observed that the higher ionic conductivity at higher temperature is due to increased thermally-activated hopping rates accompanied by a significant increase in carrier concentration. The contribution of carrier concentration to the total conductivity is also confirmed from activation energy of migration conduction and from Summerfield scaling. The ac conductivity results are also well correlated with TEM results.

  19. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  20. Proposal of adaptive human interface and study of interface evaluation method for plant operators

    International Nuclear Information System (INIS)

    Ujita, Hiroshi; Kubota, Ryuji.

    1994-01-01

    In this report, a new concept of human interface adaptive to plant operators' mental model, cognitive process and psychological state which change with time is proposed. It is composed of a function to determine information which should be indicated to operators based on the plant situation, a function to estimate operators' internal conditions, and a function to arrange the information amount, position, timing, form etc. based on their conditions. The method to evaluate the fitness of the interface by using the analysis results based on cognitive science, ergonomics, psychology and physiology is developed to achieve such an interface. Fundamental physiological experiments have been performed. Stress and workload can be identified by the ratio of the power average of the α wave fraction of a brain wave and be distinguished by the ratio of the standard deviation of the R-R interval in test and at rest, in the case of low stress such as mouse operation, calculation and walking. (author)

  1. Proposal of adaptive human interface and study of interface evaluation method for plant operators

    Energy Technology Data Exchange (ETDEWEB)

    Ujita, Hiroshi [Hitachi Ltd., Ibaraki (Japan). Energy Research Lab.; Kubota, Ryuji

    1994-07-01

    In this report, a new concept of human interface adaptive to plant operators' mental model, cognitive process and psychological state which change with time is proposed. It is composed of a function to determine information which should be indicated to operators based on the plant situation, a function to estimate operators' internal conditions, and a function to arrange the information amount, position, timing, form etc. based on their conditions. The method to evaluate the fitness of the interface by using the analysis results based on cognitive science, ergonomics, psychology and physiology is developed to achieve such an interface. Fundamental physiological experiments have been performed. Stress and workload can be identified by the ratio of the power average of the [alpha] wave fraction of a brain wave and be distinguished by the ratio of the standard deviation of the R-R interval in test and at rest, in the case of low stress such as mouse operation, calculation and walking. (author).

  2. Theoretical study of the attenuation of a gaussian beam penetrating into a dielectric circular wave guide

    International Nuclear Information System (INIS)

    Crenn, J.P.

    1981-07-01

    It is proposed to draw up an approximate formula directly giving the attenuation of a gaussian beam penetrating into a superdimensioned dielectric circular wave guide. This formula is derived from optical laws, i.e. Fresnel's formulae of the reflexion of a wave on a dielectric to which a correcting term due to diffraction has been added. The results given by this formula are compared with the existing results, based on the breakdown of a gaussian beam into propagation modes, thereby enabling their validity and the field of use to be checked. An application is then made to the wave guides that will be employed in the infrared interferometer fitted in JET [fr

  3. Space station automation and robotics study. Operator-systems interface

    Science.gov (United States)

    1984-01-01

    This is the final report of a Space Station Automation and Robotics Planning Study, which was a joint project of the Boeing Aerospace Company, Boeing Commercial Airplane Company, and Boeing Computer Services Company. The study is in support of the Advanced Technology Advisory Committee established by NASA in accordance with a mandate by the U.S. Congress. Boeing support complements that provided to the NASA Contractor study team by four aerospace contractors, the Stanford Research Institute (SRI), and the California Space Institute. This study identifies automation and robotics (A&R) technologies that can be advanced by requirements levied by the Space Station Program. The methodology used in the study is to establish functional requirements for the operator system interface (OSI), establish the technologies needed to meet these requirements, and to forecast the availability of these technologies. The OSI would perform path planning, tracking and control, object recognition, fault detection and correction, and plan modifications in connection with extravehicular (EV) robot operations.

  4. A large-scale study of the ultrawideband microwave dielectric properties of normal, benign and malignant breast tissues obtained from cancer surgeries

    Energy Technology Data Exchange (ETDEWEB)

    Lazebnik, Mariya [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI (United States); Popovic, Dijana [Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB (Canada); McCartney, Leah [Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB (Canada); Watkins, Cynthia B [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI (United States); Lindstrom, Mary J [Department of Biostatistics and Medical Informatics, University of Wisconsin, Madison, WI (United States); Harter, Josephine [Department of Pathology, University of Wisconsin, Madison, WI (United States); Sewall, Sarah [Department of Pathology, University of Wisconsin, Madison, WI (United States); Ogilvie, Travis [Department of Pathology, University of Calgary, Calgary, AB (Canada); Magliocco, Anthony [Department of Pathology, University of Calgary, Calgary, AB (Canada); Breslin, Tara M [Department of Surgery, University of Wisconsin, Madison, WI (United States); Temple, Walley [Department of Surgery and Oncology, University of Calgary, Calgary, AB (Canada); Mew, Daphne [Department of Surgery and Oncology, University of Calgary, Calgary, AB (Canada); Booske, John H [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI (United States); Okoniewski, Michal [Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB (Canada); Hagness, Susan C [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI (United States)

    2007-10-21

    The development of microwave breast cancer detection and treatment techniques has been driven by reports of substantial contrast in the dielectric properties of malignant and normal breast tissues. However, definitive knowledge of the dielectric properties of normal and diseased breast tissues at microwave frequencies has been limited by gaps and discrepancies across previously published studies. To address these issues, we conducted a large-scale study to experimentally determine the ultrawideband microwave dielectric properties of a variety of normal, malignant and benign breast tissues, measured from 0.5 to 20 GHz using a precision open-ended coaxial probe. Previously, we reported the dielectric properties of normal breast tissue samples obtained from reduction surgeries. Here, we report the dielectric properties of normal (adipose, glandular and fibroconnective), malignant (invasive and non-invasive ductal and lobular carcinomas) and benign (fibroadenomas and cysts) breast tissue samples obtained from cancer surgeries. We fit a one-pole Cole-Cole model to the complex permittivity data set of each characterized sample. Our analyses show that the contrast in the microwave-frequency dielectric properties between malignant and normal adipose-dominated tissues in the breast is considerable, as large as 10:1, while the contrast in the microwave-frequency dielectric properties between malignant and normal glandular/fibroconnective tissues in the breast is no more than about 10%.

  5. A large-scale study of the ultrawideband microwave dielectric properties of normal, benign and malignant breast tissues obtained from cancer surgeries

    Science.gov (United States)

    Lazebnik, Mariya; Popovic, Dijana; McCartney, Leah; Watkins, Cynthia B.; Lindstrom, Mary J.; Harter, Josephine; Sewall, Sarah; Ogilvie, Travis; Magliocco, Anthony; Breslin, Tara M.; Temple, Walley; Mew, Daphne; Booske, John H.; Okoniewski, Michal; Hagness, Susan C.

    2007-10-01

    The development of microwave breast cancer detection and treatment techniques has been driven by reports of substantial contrast in the dielectric properties of malignant and normal breast tissues. However, definitive knowledge of the dielectric properties of normal and diseased breast tissues at microwave frequencies has been limited by gaps and discrepancies across previously published studies. To address these issues, we conducted a large-scale study to experimentally determine the ultrawideband microwave dielectric properties of a variety of normal, malignant and benign breast tissues, measured from 0.5 to 20 GHz using a precision open-ended coaxial probe. Previously, we reported the dielectric properties of normal breast tissue samples obtained from reduction surgeries. Here, we report the dielectric properties of normal (adipose, glandular and fibroconnective), malignant (invasive and non-invasive ductal and lobular carcinomas) and benign (fibroadenomas and cysts) breast tissue samples obtained from cancer surgeries. We fit a one-pole Cole-Cole model to the complex permittivity data set of each characterized sample. Our analyses show that the contrast in the microwave-frequency dielectric properties between malignant and normal adipose-dominated tissues in the breast is considerable, as large as 10:1, while the contrast in the microwave-frequency dielectric properties between malignant and normal glandular/fibroconnective tissues in the breast is no more than about 10%.

  6. A large-scale study of the ultrawideband microwave dielectric properties of normal, benign and malignant breast tissues obtained from cancer surgeries

    International Nuclear Information System (INIS)

    Lazebnik, Mariya; Popovic, Dijana; McCartney, Leah; Watkins, Cynthia B; Lindstrom, Mary J; Harter, Josephine; Sewall, Sarah; Ogilvie, Travis; Magliocco, Anthony; Breslin, Tara M; Temple, Walley; Mew, Daphne; Booske, John H; Okoniewski, Michal; Hagness, Susan C

    2007-01-01

    The development of microwave breast cancer detection and treatment techniques has been driven by reports of substantial contrast in the dielectric properties of malignant and normal breast tissues. However, definitive knowledge of the dielectric properties of normal and diseased breast tissues at microwave frequencies has been limited by gaps and discrepancies across previously published studies. To address these issues, we conducted a large-scale study to experimentally determine the ultrawideband microwave dielectric properties of a variety of normal, malignant and benign breast tissues, measured from 0.5 to 20 GHz using a precision open-ended coaxial probe. Previously, we reported the dielectric properties of normal breast tissue samples obtained from reduction surgeries. Here, we report the dielectric properties of normal (adipose, glandular and fibroconnective), malignant (invasive and non-invasive ductal and lobular carcinomas) and benign (fibroadenomas and cysts) breast tissue samples obtained from cancer surgeries. We fit a one-pole Cole-Cole model to the complex permittivity data set of each characterized sample. Our analyses show that the contrast in the microwave-frequency dielectric properties between malignant and normal adipose-dominated tissues in the breast is considerable, as large as 10:1, while the contrast in the microwave-frequency dielectric properties between malignant and normal glandular/fibroconnective tissues in the breast is no more than about 10%

  7. Study of spatiotemporal dynamics of a nanosecond atmospheric-pressure dielectric barrier discharge in millimeter-long air gaps

    Energy Technology Data Exchange (ETDEWEB)

    Malashin, M. V.; Moshkunkov, S. I.; Khomich, V. Yu.; Shershunova, E. A., E-mail: eshershunova@gmail.com [Russian Academy of Sciences, Institute for Electrophysics and Electric Power (Russian Federation)

    2017-02-15

    The spatiotemporal dynamics of a nanosecond atmospheric-pressure dielectric barrier discharge in 1- to 3-mm-long air gaps was studied experimentally. By using a segmented electrode, data on the time evolution of the discharge in different regions of the discharge gap were obtained. The uniformity of the discharge over the cross section is estimated by analyzing the spatial distribution of its glow.

  8. Study of the pressure dependence of dielectric properties of ionic crystals with the exchange-charge model

    Energy Technology Data Exchange (ETDEWEB)

    Batana, A; Faour, J

    1987-03-01

    The formalism of the exchange-charge model (ECM) is extended for studying the pressure dependence of the static dielectric constant and the volume dependence of the effective ionic charge for b.c.c. lattices. Calculated values for CsCl, CsBr, CsI, and TlBr together with the simple shell model values and experimental values are listed and discussed.

  9. First Principle simulations of electrochemical interfaces - a DFT study

    DEFF Research Database (Denmark)

    Ahmed, Rizwan

    for the whole system to qualify as a proper electrochemical interface. I have also contributed to the model, which accounts for pH in the first principle electrode-electrolyte interface simulations. This is an important step forward, since electrochemical reaction rate and barrier for charge transfer can......In this thesis, I have looked beyond the computational hydrogen electrode (CHE) model, and focused on the first principle simulations which treats the electrode-electrolyte interfaces explicitly. Since obtaining a realistic electrode-electrolyte interface was difficult, I aimed to address various...... challenges regarding first principle electrochemical interface modeling in order to bridge the gap between the model interface used in simulations and real catalyst at operating conditions. Atomic scale insight for the processes and reactions that occur at the electrochemical interface presents a challenge...

  10. Study on characteristics of high frequency dielectric barrier discharge for the removal of organic pollutant adsorbed on activated carbon

    Energy Technology Data Exchange (ETDEWEB)

    Qu, G.Z.; Li, G.F. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Li, J.; Lu, N.; Wu, Y.; Li, D. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Key Lab of Industrial Ecology and Environmental Engineering, Ministry of Education, Dalian (China)

    2010-07-01

    Advanced oxidation technologies such as photocatalysis, electrochemical degradation, Fenton oxidation, hydrogen peroxide oxidation, and plasma oxidation are increasingly being used to degrade refractory biodegradable organic contaminants. The plasma oxidation method has the advantage of direct in situ production of multiple types of high-reactive chemical species, including molecules and radicals that facilitate the degradation reaction. In addition, plasma oxidation does not produce any secondary pollution. Compared to other plasma technologies, the dielectric barrier discharge (DBD) plasma has been considered as a promising technology for removing toxic compounds because of its stability and its treatability property of biologically recalcitrant compounds in wastewater. However, the energy efficiency of DBD requires improvement for economic reasons. This paper reported on an experimental study that investigated the electrical characteristics of a parallel plate DBD reactor using a high frequency power supply for the removal of pentachlorophenol (PCP) adsorbed on activated carbon (AC). This study examined the effects of AC with different mass on discharge characteristics and compared the voltage and current waveforms, and discharge images of DBD reactors with different dielectric configurations. When the DBD reactor filled with AC, the applied voltage of discharge decreased regardless of the DBD reactor configuration in terms of having a single barrier or two barriers. The discharge characteristics had no significant change with AC mass increasing. The discharge images and current waveforms showed that DBD reactor configuration consisting of two dielectrics is more homogeneous and stable than the one consisting of a single dielectric. Under the same electric field condition, the degradation efficiency of PCP in two barriers reactor is higher than that in single barrier reactor. It was concluded that the findings from this study may be instrumental in treating

  11. Dielectric relaxation studies in super-cooled liquid and glassy phases of anti-cancerous alkaloid: Brucine

    Science.gov (United States)

    Afzal, Aboothahir; Shahin Thayyil, M.; Sulaiman, M. K.; Kulkarni, A. R.

    2018-05-01

    Brucine has good anti-tumor effects, on both liver cancer and breast cancer. It has bioavailability of 40.83%. Since the bioavailability of the drug is low, an alternative method to increase its bioavailability and solubility is by changing the drug into glassy form. We used Differential Scanning Calorimetry (DSC) for studying the glass forming ability of the drug. Brucine was found to be a very good glass former glass transition temperature 365 K. Based on the DSC analysis we have used broadband dielectric spectroscopy (BDS) for studying the drug in the super cooled and glassy state. BDS is an effective tool to probe the molecular dynamics in the super cooled and glassy state. Molecular mobility is found to be present even in the glassy state of this active pharmaceutical ingredient (API) which is responsible for the instability. Our aim is to study the factors responsible for instability of this API in amorphous form. Cooling curves for dielectric permittivity and dielectric loss revealed the presence of structural (α) and secondary relaxations (β and γ). Temperature dependence of relaxation time is fitted by Vogel-Fulcher-Tammann equation and found the values of activation energy of the α relaxation, fragility and glass transition temperature. Paluch's anti correlation is also verified, that the width of the α-loss peak at or near the glass transition temperature Tg is strongly anticorrelated with the polarity of the molecule. The larger the dielectric relaxation strength Δɛ (Tg) of the system, the narrower is the α-loss peak (higher value of βKWW).

  12. Charge accumulation in lossy dielectrics: a review

    DEFF Research Database (Denmark)

    Rasmussen, Jørgen Knøster; McAllister, Iain Wilson; Crichton, George C

    1999-01-01

    At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries such that the mat......At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries...

  13. Studies of the thermal properties of horn keratin by dielectric spectroscopy, thermogravimetric analysis and differential thermal analysis

    International Nuclear Information System (INIS)

    Marzec, E.; Piskunowicz, P.; Jaroszyk, F.

    2002-01-01

    The dielectric and thermal properties of horn keratin have been studied bu dielectric spectroscopy in the frequency range 10 1 -10 5 Hz, thermogravimetric analysis (TG) and different thermal analysis (DTA). Measurement of non-irradiated and g amma - irradiated keratin with doses 5, 50 kGy were performed at temperature from 22 to 260 o C. The results revealed the occurrence of phase transitions related to release of loosely bound water and bound water up to 200 o Cand the denaturation of the crystalline structure above this temperature. The influence of γ-irradiation on the thermal behaviour of keratin is significant only in the temperature range of denaturation. The decrease in the temperature of denaturation would suggest that γ-irradiation initiates main-chain degradation. (authors)

  14. Study of surface plasmon resonance of core-shell nanogeometry under the influence of perovskite dielectric environment: Electrostatic approximation

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Nilesh Kumar; Sharma, R. P. [Centre for Energy Studies, Indian Institute of Technology, Delhi-110016 (India)

    2016-05-23

    We have systematically study the nano-plasmonic coupling to the perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) dielectric media in terms of surface plasmon resonance. The surface plasmon resonances are exhibited by the metal nanoparticles which is the electromagnetic excitation conduction electron when it is irradiated by incident light photon. Tunable behaviour of SPRs can be utilized to enhance the absorption of photon inside the surrounding environment in the wavelength range 300 to 800 nm. We have been selected two different types of nanogeometry such as coated and non-coated metal nanoparticles (radii ranges from 10 to 15 nm) to understand the plasmonic interaction to the dielectric media. Finally, we have observed that the coated nanogeometry is more preferable as compared to non-coated system to analyse the tunability of SPR peaks.

  15. studies dielectric behaviour of some long chain alcohols and their mixtures with a non-polar solvent at various concentration

    International Nuclear Information System (INIS)

    Yaqub, M.; Ahmed, S.S.; Hussain, A.

    2006-01-01

    Dielectric constant, refractive index and the Kirkwood linear correlation factor of 1-propanol, 1-butanol and 1-pentanol in mixtures with carbon tetrachloride at various concentration have been measured at fixed frequency (100 KHz) at 303.15 K. For the study of dielectric properties of polar molecules in a non-polar solvent at different concentrations, polarization per unit volume and excess free-energy of mixing were evaluated at this temperature. In order to study the association of polar molecules in such a non-polar solvent, the Kirkwood correlation factor (g) between molecular pairs, which exists due to the hydrogen bond association suggesting the presence of some dimension in the liquid phase with a number of dimmers, was determined. The refractive index and dielectric constant measurements are expected to shed some light on the configuration of molecules in various mixtures, and give some idea about the specific interactions between components, which decrese with the increase in the concentration of alcohol. All the three mixtures showed different behaviour for the value of correlation factor (g) as a function of concentration. The response of 1-pentanol was broadly identical to that of small chain alcohols. The different behaviour of the correlation factor (g) was interpreted in terms of the Kirkwood-Frohlich theory, as it takes into account, explicitly, such type of short and long range interactions of a mixture of polar molecules with non-polar solvents. (author)

  16. Dielectric relaxation and AC conductivity studies of Se90Cd10−xInx glassy alloys

    Directory of Open Access Journals (Sweden)

    Nitesh Shukla

    2016-06-01

    Full Text Available Chalcogenide glassy alloys of Se90Cd10−xInx (x = 2, 4, 6, 8 are synthesized by melt quench technique. The prepared glassy alloys have been characterized by techniques such as differential scanning calorimetry (DSC, scanning electron microscopy (SEM and energy dispersive X-ray (EDAX. Dielectric properties of Se90Cd10−xInx (x = 2, 4, 6, 8 chalcogenide glassy system have been studied using impedance spectroscopic technique in the frequency range 42 Hz to 5 MHz at room temperature. It is found that the dielectric constants ɛ′, dielectric loss factor ɛ″ and loss angle Tan δ depend on frequency. ɛ′, ɛ″ and loss angle Tan δ are found to be decreasing with the In content in Se90Cd10−xInx glassy system. AC conductivity of the prepared sample has also been studied. It is found that AC conductivity increases with frequency where as it has decreasing trend with increasing In content in Se–Cd matrix. The semicircles observed in the Cole–Cole plots indicate a single relaxation process.

  17. Dielectric studies of Co3-xMnxO4 (x=0.1-1.0) cubic spinel multiferroic

    Science.gov (United States)

    Meena, P. L.; Kumar, Ravi; Prajapat, C. L.; Sreenivas, K.; Gupta, Vinay

    2009-07-01

    A series of Co3-xMnxO4 (x =0.1-1.0) multiferroic cubic spinel ceramics were prepared to study the effect of Mn substitution at Co site on the crystal structures and dielectric properties. No significant change in the structural symmetry was observed with increasing x up to 1.0. A linear increase in lattice parameter with x is attributed to the substitution of Co3+ by Mn3+ (large ionic radii) at the octahedral sites. An antiferromagnetic-type ordering of Co3O4 changes to ferrimagnetic-type order after incorporation of Mn. The effect of Mn substitution on the dielectric constant and loss tangent was studied over a wide range of frequency (75 kHz-5 MHz) and temperature of 150-450 K. The measured value of room temperature ac conductivity at 1.0 MHz was found to increase from 2.0×10-6 to 4.4×10-4 Ω-1 cm-1 and follows power law (σac=Aωs) behavior. The dielectric constant ɛ'(ω) shows a weak frequency dispersion and small temperature dependence below 250 K for all ceramic samples. However, a strong temperature and frequency dependence on ɛ'(ω) was observed at higher temperature (>250 K). The temperature dependent ɛ'(ω) data show the existence of room temperature ferroelectricity in all prepared samples.

  18. Dielectric relaxation behavior and impedance studies of Cu2+ ion doped Mg - Zn spinel nanoferrites

    Science.gov (United States)

    Choudhary, Pankaj; Varshney, Dinesh

    2018-03-01

    Cu2+ substituted Mg - Zn nanoferrites is synthesized by low temperature fired sol gel auto combustion method. The spinel nature of nanoferrites was confirmed by lab x-ray technique. Williamson - Hall (W-H) analysis estimate the average crystallite size (22.25-29.19 ± 3 nm) and micro strain induced Mg0.5Zn0.5-xCuxFe2O4 (0.0 ≤ x ≤ 0.5). Raman scattering measurements confirm presence of four active phonon modes. Red shift is observed with enhanced Cu concentration. Dielectric parameters exhibit a non - monotonous dispersion with Cu concentration and interpreted with the support of hopping mechanism and Maxwell-Wagner type of interfacial polarization. The ac conductivity of nanoferrites increases with raising the frequency. Complex electrical modulus reveals a non - Debye type of dielectric relaxation present in nanoferrites. Reactive impedance (Z″) detected an anomalous behavior and is related with resonance effect. Complex impedance demonstrates one semicircle corresponding to the intergrain (grain boundary) resistance and also explains conducting nature of nanoferrites. For x = 0.2, a large semicircle is observed revealing the ohmic nature (minimum potential drop at electrode surface). Dielectric properties were improved for nanoferrites with x = 0.2 and is due to high dielectric constant, conductivity and minimum loss value (∼0.009) at 1 MHz.

  19. Dielectric relaxation studies in 5CB nematic liquid crystal at 9 GHz ...

    Indian Academy of Sciences (India)

    Resonance width, shift in resonance frequency, relaxation time and activation energy of 5CB nematic liquid crystal are measured using microwave cavity technique under the influence of an external magnetic field at 9 GHz and at different temperatures. The dielectric response in liquid crystal at different temperatures and ...

  20. A first-principles study of the dielectric properties of TiO{sub 2} polymorphs

    Energy Technology Data Exchange (ETDEWEB)

    Thilagam, A; Simpson, D J; Gerson, A R, E-mail: Thilagam.Lohe@unisa.edu.au, E-mail: Darren.Simpson@unisa.edu.au, E-mail: Andrea.Gerson@unisa.edu.au [Minerals and Materials Science and Technology, Mawson Institute, Division of IEEE, University of South Australia, Mawson Lakes Campus, South Australia 5095 (Australia)

    2011-01-19

    We present an analysis of the dielectric properties of the three polymorphs of TiO{sub 2} (rutile, anatase and brookite phases), using ab initio time-dependent density functional perturbation theory based on the Vignale-Kohn functional. We implement this functional, which incorporates many-body effects, using the periodic program BAND. The improved result for the density of states spectra for brookite is suggestive of increased titanium ion Jahn-Teller effects for this phase. The imaginary and real components of the frequency-dependent dielectric functions show notable dielectric anisotropies, with implications for excitonic interactions, for all three common phases of TiO{sub 2}. Comparison of the electron energy-loss spectrum for undoped and doped rutile and anatase reveals the critical role of collective charge excitations in photocatalytic mechanisms. The correlation between plasmon peaks present at lower energies and decreased photocatalytic activity due to substitutional aluminum doping in combination with oxygen vacancies in rutile and anatase is highlighted. Moreover, there is clear correlation between dielectric properties and the microstructure of the TiO{sub 2} polymorphs as suggested via the framework of the Born effective charge and Hirshfeld charge distribution schemes.

  1. A first-principles study of the dielectric properties of TiO2 polymorphs

    International Nuclear Information System (INIS)

    Thilagam, A; Simpson, D J; Gerson, A R

    2011-01-01

    We present an analysis of the dielectric properties of the three polymorphs of TiO 2 (rutile, anatase and brookite phases), using ab initio time-dependent density functional perturbation theory based on the Vignale-Kohn functional. We implement this functional, which incorporates many-body effects, using the periodic program BAND. The improved result for the density of states spectra for brookite is suggestive of increased titanium ion Jahn-Teller effects for this phase. The imaginary and real components of the frequency-dependent dielectric functions show notable dielectric anisotropies, with implications for excitonic interactions, for all three common phases of TiO 2 . Comparison of the electron energy-loss spectrum for undoped and doped rutile and anatase reveals the critical role of collective charge excitations in photocatalytic mechanisms. The correlation between plasmon peaks present at lower energies and decreased photocatalytic activity due to substitutional aluminum doping in combination with oxygen vacancies in rutile and anatase is highlighted. Moreover, there is clear correlation between dielectric properties and the microstructure of the TiO 2 polymorphs as suggested via the framework of the Born effective charge and Hirshfeld charge distribution schemes.

  2. Ab-initio study of the dielectric response of high-permittivity perovskites for energy storage

    International Nuclear Information System (INIS)

    Do-Amaral-De-Andrade-Sophia, Gustavo

    2014-01-01

    Many of materials based on transition metals have a wide range of applications, such as the storage of energy, due to their peculiar properties (high-dielectric constants, ferro-electricity,...). The knowledge of their bulk properties is essential in designing targeted devices with high performance. For instance, ABO 3 perovskites are peculiarly interesting for their atomic structural flexibility, allowing high number of atoms substitution and giving them specific chemical and electrical properties compared to the pure compounds. In this context, first principles calculations can be useful to understand the structural and electronic properties of these materials. The pressure-induced giant dielectric anomaly of ABO 3 perovskites has been investigated at the ab initio level. Its mechanism has been analyzed in terms of thermodynamic phase stability, structural and phonon contributions and Born effective charges. It is shown that the IR-active soft phonon is responsible for the anomaly. This mode always involves a displacement and a deformation of the oxygen octahedra, while the roles of A and B ions vary among the materials and between high- and low-pressure phase transitions. A sharp increase in the phonon amplitude near the phase transition gives rise to the dielectric anomaly. The use of hybrid functionals is required for agreement with experimental data. The calculations show that the dielectric anomaly in the pressure-induced phase transitions of these perovskites is a property of the bulk material. (author)

  3. Study made of dielectric properties of promising materials for cryogenic capacitors

    Science.gov (United States)

    Mathes, K. N.; Minnich, S. H.

    1967-01-01

    Experimental investigations were conducted to determine dielectric properties of promising materials for cryogenic capacitors to be used in energy storage and pulse applications. The three classes of materials investigated were inorganic bonded ferroelectric materials, anodic coatings on metal foils, and polar low temperature liquids.

  4. Body machine interfaces for neuromotor rehabilitation: a case study.

    Science.gov (United States)

    Pierella, Camilla; Abdollahi, Farnaz; Farshchiansadegh, Ali; Pedersen, Jessica; Chen, David; Mussa-Ivaldi, Ferdinando A; Casadio, Maura

    2014-01-01

    High-level spinal cord injury (SCI) survivors face every day two related problems: recovering motor skills and regaining functional independence. Body machine interfaces (BoMIs) empower people with sever motor disabilities with the ability to control an external device, but they also offer the opportunity to focus concurrently on achieving rehabilitative goals. In this study we developed a portable, and low-cost BoMI that addresses both problems. The BoMI remaps the user's residual upper body mobility to the two coordinates of a cursor on a computer monitor. By controlling the cursor, the user can perform functional tasks, such as entering text and playing games. This framework also allows the mapping between the body and the cursor space to be modified, gradually challenging the user to exercise more impaired movements. With this approach, we were able to change the behavior of our SCI subject, who initially used almost exclusively his less impaired degrees of freedom - on the left side - for controlling the BoMI. At the end of the few practice sessions he had restored symmetry between left and right side of the body, with an increase of mobility and strength of all the degrees of freedom involved in the control of the interface. This is the first proof of concept that our BoMI can be used to control assistive devices and reach specific rehabilitative goals simultaneously.

  5. Nanostructured interfaces for enhancing mechanical properties of composites: Computational micromechanical studies

    DEFF Research Database (Denmark)

    Mishnaevsky, Leon

    2015-01-01

    Computational micromechanical studies of the effect of nanostructuring and nanoengineering of interfaces, phase and grain boundaries of materials on the mechanical properties and strength of materials and the potential of interface nanostructuring to enhance the materials properties are reviewed....

  6. Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Farid, Hafiz Muhammad Tahir, E-mail: tahirfaridbzu@gmail.com [Department of Physics, Bahauddin Zakariya, University Multan, 60800 (Pakistan); Ahmad, Ishtiaq; Ali, Irshad [Department of Physics, Bahauddin Zakariya, University Multan, 60800 (Pakistan); Ramay, Shahid M. [College of Science, Physics and Astronomy Department, King Saud University, P.O. Box 2455, 11451 Riyadh (Saudi Arabia); Mahmood, Asif [Chemical Engineering Department, College of Engineering, King Saud University, Riyadh (Saudi Arabia); Murtaza, G. [Centre for Advanced Studies in Physics, GC University, Lahore 5400 (Pakistan)

    2017-07-15

    Highlights: • Magnesium based spinel ferrites were successfully synthesized by sol-gel method. • Dielectric constant shows the normal spinel ferrites behavior. • The dc conductivity are found to decrease with increasing temperature. • The samples with low conductivity have high values of activation energy. • The Impedance decreases with increasing frequency of applied field. - Abstract: Spinel ferrites with nominal composition MgPr{sub y}Fe{sub 2−y}O{sub 4} (y = 0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1 MHz–3 GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole–Cole plots were used to separate the grain and grain boundary’s effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary’s resistance as compared to the grain’s resistance. As both AC conductivity and Cole–Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe{sub 2}O{sub 4} exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.

  7. Adhesion at WC/diamond interfaces - A theoretical study

    International Nuclear Information System (INIS)

    Padmanabhan, Haricharan; Rao, M. S. Ramachandra; Nanda, B. R. K.

    2015-01-01

    We investigate the adhesion at the interface of face-centered tungsten-carbide (001) and diamond (001) from density-functional calculations. Four high-symmetry model interfaces, representing different lattice orientations for either side of the interface, are constructed to incorporate different degrees of strain arising due to lattice mismatch. The adhesion, estimated from the ideal work of separation, is found to be in the range of 4 - 7 J m −2 and is comparable to that of metal-carbide interfaces. Maximum adhesion occurs when WC and diamond slabs have the same orientation, even though such a growth induces large epitaxial strain at the interface. From electronic structure calculations, we attribute the adhesion to covalent interaction between carbon p-orbitals as well as partial ionic interaction between the tungsten d- and carbon p-orbitals across the interface

  8. Adhesion at WC/diamond interfaces - A theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Padmanabhan, Haricharan [Department of Engineering Design, Indian Institute of Technology Madras, Chennai – 600036 (India); Rao, M. S. Ramachandra [Department of Physics and Nano-Functional Materials Technology Centre, Indian Institute of Technology Madras, Chennai – 600036 (India); Nanda, B. R. K., E-mail: nandab@iitm.ac.in [Department of Physics, Indian Institute of Technology Madras, Chennai – 600036 (India)

    2015-06-24

    We investigate the adhesion at the interface of face-centered tungsten-carbide (001) and diamond (001) from density-functional calculations. Four high-symmetry model interfaces, representing different lattice orientations for either side of the interface, are constructed to incorporate different degrees of strain arising due to lattice mismatch. The adhesion, estimated from the ideal work of separation, is found to be in the range of 4 - 7 J m{sup −2} and is comparable to that of metal-carbide interfaces. Maximum adhesion occurs when WC and diamond slabs have the same orientation, even though such a growth induces large epitaxial strain at the interface. From electronic structure calculations, we attribute the adhesion to covalent interaction between carbon p-orbitals as well as partial ionic interaction between the tungsten d- and carbon p-orbitals across the interface.

  9. Ab initio molecular dynamics study of temperature and pressure-dependent infrared dielectric functions of liquid methanol

    Directory of Open Access Journals (Sweden)

    C. C. Wang

    2017-03-01

    Full Text Available The temperature and pressure-dependent dielectric functions of liquids are of great importance to the thermal radiation transfer and the diagnosis and control of fuel combustion. In this work, we apply the state-of-the-art ab initio molecular dynamics (AIMD method to calculate the infrared dielectric functions of liquid methanol at 183–573 K and 0.1–160 MPa in the spectral range 10−4000 cm−1, and study the temperature and pressure effects on the dielectric functions. The AIMD approach is validated by the Infrared Variable Angle Spectroscopic Ellipsometry (IR-VASE experimental measurements at 298 K and 0.1 MPa, and the proposed IR-VASE method is verified by comparison with paper data of distilled water. The results of the AIMD approach agrees well with the experimental values of IR-VASE. The experimental and theoretical analyses indicate that the temperature and pressure exert a noticeable influence on the infrared dielectric functions of liquid methanol. As temperature increases, the average molecular dipole moment decreases. The amplitudes of dominant absorption peaks reduce to almost one half as temperature increases from 183 to 333 K at 0.1 MPa and from 273 to 573 K at 160 MPa. The absorption peaks below 1500 cm–1 show a redshift, while those centered around 3200 cm–1 show a blueshift. Moreover, larger average dipole moments are observed as pressure increases. The amplitudes of dominant absorption peaks increase to almost two times as pressure increases from 1 to 160 MPa at 373 K.

  10. Free water content and monitoring of healing processes of skin burns studied by microwave dielectric spectroscopy in vivo

    International Nuclear Information System (INIS)

    Hayashi, Yoshihito; Miura, Nobuhiro; Shinyashiki, Naoki; Yagihara, Shin

    2005-01-01

    We have investigated the dielectric properties of human skin in vivo at frequencies up to 10 GHz using a time-domain reflectometry method with open-ended coaxial probes. Since γ-dispersion results from the reorientation of free water molecules, the free water content of skin is quantitatively determined by dielectric measurements. The free water content of finger skin increased by about 10% after soaking in 37 0 C water for 30 min, and it systematically decreased again through the drying process, as expected. Thus this analytical method has been applied to the study of skin burns. The free water content of burned human cheek skin due to hydrofluoric acid was significantly lower than that of normal skin, and the burned skin recovered through the healing process. In the case of a human hand skin burn due to heat, although the free water content was almost the same as that of normal skin at the beginning, it decreased during the healing process for the first 10 days, then began to increase. Although the number of test subjects was one for each experiment, it was shown that free water content is a good indicator for evaluating skin health and can be well monitored by dielectric spectroscopy

  11. A comparative study on thermal, mechanical and dielectric characteristics of low density polyethylene crosslinked by radiation and chemical methods

    International Nuclear Information System (INIS)

    Kim, B.H.; Ling, D.Y.; Kim, J.S.

    1976-01-01

    A comparative study on thermal, static mechanical and dielectric characteristics were made over a temperature range of ca. 20 0 C to 320 0 C and a frequency range of KHZ band on low density polyethylene specimens crosslinked, respectively, by radiation and chemical method. The thermal property of both specimens shows that softening point appears to unchange by crosslinking however, melting and liquidizing temperatures attain rapid increase at the imitation of crosslinking. Mechanical properties show little difference to both specimens crosslinked by different method, further the behaviors were discussed in connection with the relaxation of molecular segments in amorphous phase. Dose dependent dielectric characteristics observed at ambient temperature under several fixed frequencies exhibit extremities at ca. 20 Mrad and the behaviors also were interpreted qualitatively by taking into consideration of dipole concentration change in amorphous phase together with the role of specimen geometry to the depth of oxidative layer. Observing frequency dependent dielectric characteristics, it was also proved that ionic conduction loss is appreciably greater in the specimen prepared by chemical method than that by radiation. (author)

  12. Injector and beam transport simulation study of proton dielectric wall accelerator

    International Nuclear Information System (INIS)

    Zhao, Quantang; Yuan, P.; Zhang, Z.M.; Cao, S.C; Shen, X.K.; Jing, Y.; Ma, Y.Y.; Yu, C.S.; Li, Z.P.; Liu, M.; Xiao, R.Q.; Zhao, H.W.

    2012-01-01

    A simulation study of a short-pulsed proton injector for, and beam transport in, a dielectric wall accelerator (DWA) has been carried out using the particle-in-cell (PIC) code Warp. It was shown that applying “tilt pulse” voltage waveforms on three electrodes enables the production of a shorter bunch by the injector. The fields in the DWA beam tube were simulated using Computer Simulation Technology’s Microwave Studio (CST MWS) package, with various choices for the boundary conditions. For acceleration in the DWA, the beam transport was simulated with Warp, using applied fields obtained by running CST MWS. Our simulations showed that the electric field at the entrance to the DWA represents a challenging issue for the beam transport. We thus simulated a configuration with a mesh at the entrance of the DWA, intended to improve the entrance field. In these latter simulations, a proton bunch was successfully accelerated from 130 keV to about 36 MeV in a DWA with a length of 36.75 cm. As the beam bunch progresses, its transverse dimensions diminish from (roughly) 0.5×0.5 cm to 0.2×0.4 cm. The beam pulse lengthens from 1 cm to 2 cm due to lack of longitudinal compression fields. -- Highlights: ► A pulse proton injector with tilt voltages on the three electrodes was simulated. ► The fields in different part of the DWA were simulated with CST and analyzed. ► The proton beam transport in DWA was simulated with Warp successfully. ► The simulation can help for designing a real DWA.

  13. Conductivity percolation in loosely compacted microcrystalline cellulose: An in situ study by dielectric spectroscopy during densification.

    Science.gov (United States)

    Nilsson, Martin; Frenning, Göran; Gråsjö, Johan; Alderborn, Göran; Strømme, Maria

    2006-10-19

    The present study aims at contributing to a complete understanding of the water-induced ionic charge transport in cellulose. The behavior of this transport in loosely compacted microcrystalline cellulose (MCC) powder was investigated as a function of density utilizing a new type of measurement setup, allowing for dielectric spectroscopy measurement in situ during compaction. The ionic conductivity in MCC was found to increase with increasing density until a leveling-out was observed for densities above approximately 0.7 g/cm3. Further, it was shown that the ionic conductivity vs density followed a percolation type behavior signifying the percolation of conductive paths in a 3D conducting network. The density percolation threshold was found to be between approximately 0.2 and 0.4 g/cm3, depending strongly on the cellulose moisture content. The observed percolation behavior was attributed to the forming of interparticulate bonds in the MCC and the percolation threshold dependence on moisture was linked to the moisture dependence of particle rearrangement and plastic deformation in MCC during compaction. The obtained results add to the understanding of the density-dependent water-induced ionic transport in cellulose showing that, at given moisture content, the two major parameters determining the magnitude of the conductivity are the connectedness of the interparticluate bonds and the connectedness of pores with a diameter in the 5-20 nm size range. At densities between approximately 0.7 and 1.2 g/cm3 both the bond and the pore networks have percolated, facilitating charge transport through the MCC compact.

  14. Hydrothermal assisted growth of CdSe nanoparticles and study on its dielectric properties

    Science.gov (United States)

    Jamble, Shweta N.; Ghoderao, Karuna P.; Kale, Rohidas B.

    2017-11-01

    In this work, we have synthesized cadmium selenide (CdSe) nanoparticles by using cadmium chloride (CdCl2) as cadmium ion and sodium selenosulfate (Na2SeSO3) as selenium ion sources through a simple, convenient and cost-effective hydrothermal route at 180 °C temperature for 24 h. Aqueous ammonia was employed as a complex reagent to adjust the pH of the solution. Structural analysis of the obtained product was carried out by using x-ray diffractometer, which revealed that the final product has a cubic structure of CdSe with average crystallite size 13.15 nm. The cauliflower-like CdSe nanostructures were confirmed from the scanning electron microscopy and high-resolution transmission electron microscopy. EDS analysis indicates that the obtained product has a good elemental stoichiometric ratio. The electron diffraction pattern reveals the polycrystalline nature of CdSe. From UV-visible absorption spectral analysis, the optical energy bandgap of CdSe nanoparticles was found to be 1.90 eV. XPS spectra presented Cd 3d3/2, Cd 3d5/2 and Se 3d3/2 peaks at 411.04, 404.29 and 53.52 eV respectively. The CdSe nanoparticles exhibit photoluminescence with two distinct emission bands at 632 nm and 720 nm. FTIR study was used towards the understanding of the formation mechanism and bonding on the surface of the resulting nanoparticles. The dielectric properties of a pelletized sample of CdSe nanoparticles were carried out at room temperature.

  15. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  16. Dielectrophoretic deformation of thin liquid films induced by surface charge patterns on dielectric substrates

    NARCIS (Netherlands)

    Berendsen, C.W.J.; Kuijpers, C.J.; Zeegers, J.C.H.; Darhuber, A.A.

    2013-01-01

    We studied the deformation of thin liquid films induced by surface charge patterns at the solid–liquid interface quantitatively by experiments and numerical simulations. We deposited a surface charge distribution on dielectric substrates by applying potential differences between a conductive liquid

  17. Organic thin film transistors with polymer brush gate dielectrics synthesized by atom transfer radical polymerization

    DEFF Research Database (Denmark)

    Pinto, J.C.; Whiting, G.L.; Khodabakhsh, S.

    2008-01-01

    , synthesized by atom transfer radical polymerization (ATRP), were used to fabricate low voltage OFETs with both evaporated pentacene and solution deposited poly(3-hexylthiophene). The semiconductor-dielectric interfaces in these systems were studied with a variety of methods including scanning force microscopy...

  18. Theoretical Study of Local Surface Plasmon Resonances on a Dielectric-Ag Core-Shell Nanosphere Using the Discrete-Dipole Approximation Method

    International Nuclear Information System (INIS)

    Ma Ye-Wan; Wu Zhao-Wang; Zhang Li-Hua; Liu Wan-Fang; Zhang Jie

    2015-01-01

    The local surface plasmon resonances (LSPRs) of dielectric-Ag core-shell nanospheres are studied by the discretedipole approximation method. The result shows that LSPRs are sensitive to the surrounding medium refractive index, which shows a clear red-shift with the increasing surrounding medium refractive index. A dielectric-Ag core-shell nanosphere exhibits a strong coupling between the core and shell plasmon resonance modes. LSPRs depend on the shell thickness and the composition of dielectric-core and metal-shell. LSPRs can be tuned over a longer wavelength range by changing the ratio of core to shell value. The lower energy mode ω_− shows a red-shift with the increasing dielectric-core value and the inner core radius, while blue-shifted with the increasing outer shell thickness. The underlying mechanisms are analyzed with the plasmon hybridization theory and the phase retardation effect. (paper)

  19. Dielectric studies on cerium doped BaLa2Ti3O10

    Directory of Open Access Journals (Sweden)

    Parshuram B. Abhange

    2015-12-01

    Full Text Available The BaLa2-xCexTi3O10 samples (with x = 0.2, 0.4, 0.6 and 0.8 were prepared by hydroxide co-precipitation method and finally sintered at 1150 °C. The structure of the prepared samples was characterized by XRD and SEM. The single phase material was confirmed only for the BaLa1.8Ce0.2Ti3O10 ceramics. However, at higher cerium concentration secondary phase was observed. The characteristic plate-like structure, having grains with submicrometer thickness and high aspect ratio, was clearly observed by SEM. The results of dielectric measurement suggest that the appropriate adjustment of doping (with x between 0.2 and 0.8 will give sufficient high dielectric constant at very low loss. The resistivity of samples decreases with increase in temperature indicating the normal semiconducting electrical behaviour.

  20. Study of high-k gate dielectrics by means of positron annihilation

    International Nuclear Information System (INIS)

    Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

    2007-01-01

    High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Study of a Modified AC Bridge Technique for Loss Angle Measurement of a Dielectric Material

    Directory of Open Access Journals (Sweden)

    S. C. BERA

    2008-09-01

    Full Text Available A Wheatstone’s bridge network like Schering Bridge, DeSauty Bridge etc measures the loss angle or tangent of loss angle (tanδ of a dielectric material. In high voltage application this loss angle is generally measured by high voltage Schering Bridge. But continuous measurement of tan δ is not possible by these techniques. In the present paper a modified operational amplifiers based Schering Bridge network has been proposed for continuous measurement of tanδ in the form of a bridge network output voltage. Mathematical analysis of the proposed bridge network has been discussed in the paper and experimental work has been performed assuming the lossy dielectric material as a series combination of loss less capacitor and a resistor. Experimental results are reported in the paper. From the mathematical analysis and experimental results it is found that the output of the proposed bridge network is almost linearly related with tanδ.

  2. Raman spectroscopy and dielectric Studies of multiple phase transitions in ZnO:Ni

    Science.gov (United States)

    Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay; Scott, J. F.; Katiyar, R. S.

    2008-03-01

    We present Raman and dielectric data on Ni-doped ZnO (Zn1-xNixO) ceramics as a function of Ni concentration (x =0.03, 0.06, and 0.10) and temperature. A mode (around 130cm-1) is identified as TA(M) [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)] and appears due to an antiferromagnetic phase transition at low temperatures (100K) via the spin-orbit mechanism [P. Moch and C. Dugautier, Phys. Lett. A 43, 169 (1973)]. A strong dielectric anomaly occurs at around 430-460K, depending on Ni concentration, and is due to extrinsic electret effects (Ni ionic conduction) and not to a ferroelectric phase transition.

  3. Dielectric, electrical and infrared studies of γ-Fe2O3 prepared by ...

    Indian Academy of Sciences (India)

    Unknown

    Murthy V R K 1990 Low frequency dielectric properties of ferrites (eds) V R K Murthy and B Viswanatham (New. Delhi: Narosa Publication) Ch. IV, ed. 1. Murthy V R K and Sobhanadri J 1976 J. Phys. Status Solidi. (a)36k 133. Rahman M M and Venkataraman A 2002 J. Therm. Anal. Cal. 68 91. Rane K S, Verenkar V M S and ...

  4. Second harmonic generation and dielectric study of the fine and coarse grain PMN-35PT ceramics

    Czech Academy of Sciences Publication Activity Database

    Kroupa, Jan; Bovtun, Viktor; Nuzhnyy, Dmitry; Savinov, Maxim; Vaněk, Přemysl; Kamba, Stanislav; Petzelt, Jan; Holc, J.; Kosec, M.; Amorin, H.; Alguero, M.

    2008-01-01

    Roč. 81, 11-12 (2008), s. 1059-1064 ISSN 0141-1594 R&D Projects: GA ČR(CZ) GA202/06/0403; GA MŠk OC 101 Institutional research plan: CEZ:AV0Z10100520 Keywords : relaxor ferroelectrics * phase transitions * PMN-PT * SHG * dielectric Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.201, year: 2008

  5. Ion transport study in polymer-nanocomposite films by dielectric spectroscopy and conductivity scaling

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Namrata, E-mail: ntripat@ilstu.edu [Department of Physics, Illinois State University, Normal, IL 61790 (United States); Thakur, Awalendra K. [Department of Physics, Indian Institute of Technology Patna, Bihar 800013 (India); Shukla, Archana [Department of Metallurgical Engineering & Materials Science, Indian Institute of Technology, Bombay 721302 (India); Marx, David T. [Department of Physics, Illinois State University, Normal, IL 61790 (United States)

    2015-07-15

    The dielectric and conductivity response of polymer nanocomposite electrolytes (films of PMMA{sub 4}LiClO{sub 4} dispersed with nano-CeO{sub 2} powder) have been investigated. The dielectric behavior was analyzed via the dielectric permittivity (ε′) and dissipation factor (tan δ) of the samples. The analysis has shown the presence of space charge polarization at lower frequencies. The real part of ac conductivity spectra of materials obeys the Jonscher power law. Parameters such as dc conductivity, hopping rate, activation energies and the concentration of charge carriers were determined from conductivity data using the Almond West formalism. It is observed that the higher ionic conductivity at higher temperature is due to increased thermally-activated hopping rates accompanied by a significant increase in carrier concentration. The contribution of carrier concentration to the total conductivity is also confirmed from activation energy of migration conduction and from Summerfield scaling. The ac conductivity results are also well correlated with TEM results.

  6. Dielectric study on hierarchical water structures restricted in cement and wood materials

    International Nuclear Information System (INIS)

    Abe, Fumiya; Nishi, Akihiro; Saito, Hironobu; Asano, Megumi; Watanabe, Seiei; Kita, Rio; Shinyashiki, Naoki; Yagihara, Shin; Fukuzaki, Minoru; Sudo, Seiichi; Suzuki, Youki

    2017-01-01

    Dielectric relaxation processes for mortar observed by broadband dielectric spectroscopy were analyzed in the drying and hydration processes for an aging sample in the frequency region from 1 MHz up to 2 MHz. At least two processes for structured water in the kHz frequency region and another mHz relaxation process affected by ionic behaviors were observed. Comparison of the relaxation parameters obtained for the drying and hydration processes suggests an existence of hierarchical water structures in the exchange of water molecules, which are originally exchanged from free water observed at around 20 GHz. The water molecules reflected in the lower frequency process of the two kHz relaxation processes are more restricted and take more homogeneous structures than the higher kHz relaxation process. These structured water usually hidden in large ionic behaviors for wood samples was observed by electrodes covered by a thin Teflon film, and hierarchical water structures were also suggested for wood samples. Dielectric spectroscopy technique is an effective tool to analyze the new concept of hierarchical water structures in complex materials. (paper)

  7. Brillouin light scattering studies on the mechanical properties of ultrathin, porous low-K dielectric films

    Science.gov (United States)

    Zhou, Wei; Sooryakumar, R.; King, Sean

    2010-03-01

    Low K dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric material for interconnects in state of the art integrated circuits. To further reduce interconnect resistance-capacitance (RC) delays, additional reductions in the K for these low-K materials is being pursued by the introduction of controlled levels of porosity. The main challenge for porous low-K dielectrics is the substantial reduction in mechanical properties that is accompanied by the increased pore volume content needed to reduce K. We report on the application of the nondestructive Brillouin light scattering technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200 nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for the principal elastic constants that completely characterize the mechanical properties of these porous films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. The resulting elastic constants are compared with corresponding values obtained from other experimental techniques.

  8. Dielectric Dispersion Studies Indicate Change in Structure of Water by Potentised Homeopathic Medicines

    Science.gov (United States)

    Mahata, C. R.

    2012-12-01

    Response of living bodies to different vastly `diluted' homeopathic medicines are different (rejecting the sceptic's view of `placebo' effect), though they are chemically same. Till now there is no satisfactory answer to how one such medicine differs from another in terms of scientifically measurable parameters. This paper tries to address this basic issue by taking two medicines of the same potency and two different potencies of the same medicine, namely, Arnica Mont 30c, 200c and Anacardium Orient 30c, 200c. These potencies are well above the Avogadro limit. The investigation reported here proceeds with the concept of `induced molecular structure' advanced by a number of scientists. Dielectric dispersion is used as the tool for experimental verification. It is based on the fact that when the exciting frequency of applied electric field equals the characteristic frequency, then macromolecules resonate leading to anomalous dielectric dispersion associated with sharp increase in dielectric loss, the resonance frequencies being different for macromolecules of different structures or dimensions. The results suggest that medicine- and potency-specific attributes are acquired by the vehicle (i.e. water) in the form of macromolecules generated by the potentization process of homeopathy making one medicine structurally different from another.

  9. Molecular modeling studies of structural properties of polyvinyl alcohol: a comparative study using INTERFACE force field.

    Science.gov (United States)

    Radosinski, Lukasz; Labus, Karolina

    2017-10-05

    Polyvinyl alcohol (PVA) is a material with a variety of applications in separation, biotechnology, and biomedicine. Using combined Monte Carlo and molecular dynamics techniques, we present an extensive comparative study of second- and third-generation force fields Universal, COMPASS, COMPASS II, PCFF, and the newly developed INTERFACE, as applied to this system. In particular, we show that an INTERFACE force field provides a possibility of composing a reliable atomistic model to reproduce density change of PVA matrix in a narrow temperature range (298-348 K) and calculate a thermal expansion coefficient with reasonable accuracy. Thus, the INTERFACE force field may be used to predict mechanical properties of the PVA system, being a scaffold for hydrogels, with much greater accuracy than latter approaches. Graphical abstract Molecular Dynamics and Monte Carlo studies indicate that it is possible to predict properties of the PVA in narrow temperature range by using the INTERFACE force field.

  10. Studies of nanosecond pulse surface ionization wave discharges over solid and liquid dielectric surfaces

    International Nuclear Information System (INIS)

    Petrishchev, Vitaly; Leonov, Sergey; Adamovich, Igor V

    2014-01-01

    Surface ionization wave discharges generated by high-voltage nanosecond pulses, propagating over a planar quartz surface and over liquid surfaces (distilled water and 1-butanol) have been studied in a rectangular cross section test cell. The discharge was initiated using a custom-made, alternating polarity, high-voltage nanosecond pulse plasma generator, operated at a pulse repetition rate of 100–500 Hz, with a pulse peak voltage and current of 10–15 kV and 7–20 A, respectively, a pulse FWHM of ∼100 ns, and a coupled pulse energy of 2–9 mJ/pulse. Wave speed was measured using a capacitive probe. ICCD camera images demonstrated that the ionization wave propagated predominantly over the quartz wall or over the liquid surface adjacent to the grounded waveguide placed along the bottom wall of the test cell. Under all experimental conditions tested, the surface plasma ‘sheet’ was diffuse and fairly uniform, both for positive and negative polarities. The parameters of ionization wave discharge propagating over distilled water and 1-butanol surfaces were close to those of the discharge over a quartz wall. No perturbation of the liquid surface by the discharge was detected. In most cases, the positive polarity surface ionization wave propagated at a higher speed and over a longer distance compared to the negative polarity wave. For all three sets of experiments (surface ionization wave discharge over quartz, water and 1-butanol), wave speed and travel distance decreased with pressure. Diffuse, highly reproducible surface ionization wave discharge was also observed over the liquid butanol–saturated butanol vapor interface, as well as over the distilled water–saturated water vapor interface, without buffer gas flow. No significant difference was detected between surface ionization discharges sustained using single-polarity (positive or negative), or alternating polarity high-voltage pulses. Plasma emission images yielded preliminary evidence of charge

  11. Experimental and computational study of dielectric barrier discharges for environmental applications

    Science.gov (United States)

    Aerts, Robby

    Air pollution has become a major global concern which affects all inhabitants of our precious earth. Nowadays it is fact that our climate is changing and the sea level is rising. Moreover, we are facing an energy crisis because all our fossil fuel resources will sooner or later be running empty. It is clear that drastic measures are needed to keep our planet as it is today for generations to come. One of these measures is the 20-20-20 targets imposed by the European Commission, which stimulates the research for environmental energy applications. In this PhD dissertation two environmental applications of plasma technology are investigated. The first one is the abatement of flue gases, and more specifically the destruction of volatile organic compounds (VOCs). The second one is the conversion of CO2 into valuable chemicals. Both of these applications suffer from a large energy cost under classical (thermodynamic) conditions, due to the chemical stability of these molecules. Plasma technology is quite promising to overcome these thermodynamic barriers. Plasmas allow reactions at different time-scales with different species, such as electrons, ions, radicals, molecules and excited species, creating new chemical pathways. Indeed, in a plasma the applied electrical energy is directly transferred to the electrons, which activate the gas by ionization, excitation and dissociation, hence creating reactive species (ions, excited species, radicals), that can further easily undergo other chemical reactions. Especially gas discharges, which are low temperature plasmas, show promising results in the destruction of pollutants at mild conditions. A common type of gas discharge is the dielectric barrier discharge (DBD) which has been successfully scaled up for industrial ozone generation and is widely investigated in the field of environmental applications. The complexity of DBDs creates difficulties for experimental diagnostics and therefore numerical studies can help to improve

  12. A study of speech interfaces for the vehicle environment.

    Science.gov (United States)

    2013-05-01

    Over the past few years, there has been a shift in automotive human machine interfaces from : visual-manual interactions (pushing buttons and rotating knobs) to speech interaction. In terms of : distraction, the industry views speech interaction as a...

  13. Some numerical studies of interface advection properties of level set ...

    Indian Academy of Sciences (India)

    explicit computational elements moving through an Eulerian grid. ... location. The interface is implicitly defined (captured) as the location of the discontinuity in the ... This level set function is advected with the background flow field and thus ...

  14. Experimental study of an isochorically heated heterogeneous interface. A progress report

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, Juan Carlos [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-08-20

    Outline of the presentation: Studying possible mix / interface motion between heterogeneous low/high Z interfaces driven by 2-fluid or kinetic plasma effects (Heated to few eV, Sharp (sub µm) interface); Isochoric heating to initialize interface done with Al quasimonoenergetic ion beams on Trident; Have measured isochoric heating in individual materials intended for compound targets; Fielded experiments on Trident to measure interface motion (Gold-diamond, tin-aluminium); Measured heated-sample temperature with streaked optical pyrometry (SOP) (UT Austin led (research contract), SOP tests → heating uniformity Vs thickness on Al foils. Results are being analyzed.

  15. Investigation of the dielectric properties of shale

    International Nuclear Information System (INIS)

    Martemyanov, Sergey M.

    2011-01-01

    The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

  16. Brain-computer interfacing under distraction: an evaluation study

    Science.gov (United States)

    Brandl, Stephanie; Frølich, Laura; Höhne, Johannes; Müller, Klaus-Robert; Samek, Wojciech

    2016-10-01

    Objective. While motor-imagery based brain-computer interfaces (BCIs) have been studied over many years by now, most of these studies have taken place in controlled lab settings. Bringing BCI technology into everyday life is still one of the main challenges in this field of research. Approach. This paper systematically investigates BCI performance under 6 types of distractions that mimic out-of-lab environments. Main results. We report results of 16 participants and show that the performance of the standard common spatial patterns (CSP) + regularized linear discriminant analysis classification pipeline drops significantly in this ‘simulated’ out-of-lab setting. We then investigate three methods for improving the performance: (1) artifact removal, (2) ensemble classification, and (3) a 2-step classification approach. While artifact removal does not enhance the BCI performance significantly, both ensemble classification and the 2-step classification combined with CSP significantly improve the performance compared to the standard procedure. Significance. Systematically analyzing out-of-lab scenarios is crucial when bringing BCI into everyday life. Algorithms must be adapted to overcome nonstationary environments in order to tackle real-world challenges.

  17. High-energy photoemission studies of oxide interfaces

    Science.gov (United States)

    Claessen, Ralph

    2015-03-01

    The interfaces of complex oxide heterostructures can host novel quantum phases not existing in the bulk of the constituents, with the high-mobility 2D electron system (2DES) in LaAlO3/SrTiO3 (LAO/STO) representing a prominent example. Despite extensive research the origin of the 2DES and its unusual properties - including the supposed coexistence of superconductivity and ferromagnetism - are still a matter of intense debate. Photoelectron spectroscopy, recently extended into the soft (SX-ARPES) and hard (HAXPES) X-ray regime, is a powerful method to provide detailed insight into the electronic structure of these heterostructures and, in particular, of the buried interface. This includes the identification of the orbital character of the 2DES as well as the determination of vital band structure information, such as band alignment, band bending, and even k-resolved band dispersions and Fermi surface topology. Moreover, resonant photoemission at the Ti L-edge reveals the existence of two different species of Ti 3d states, localized and itinerant, which can be distinguished and identified by their different resonance behavior. The role of oxygen vacancies is studied by controlled in-situ oxidation, which allows us to vary the composition from fully stoichiometric to strongly O-deficient. By comparison to free STO surfaces we can thus demonstrate that the metallicity of the heteointerfaces is intrinsic, i . e . it persists even in the absence of O defects. I will discuss our photoemission results on LAO/STO heterostructures in both (100) and (111) orientation as well as on the related system γ-Al2O3/STO(100), which also hosts a 2DES with an even higher mobility. Work in collaboration with J. Mannhart (MPI-FKF, Stuttgart), N. Pryds (TU Denmark), G. Rijnders (U Twente), S. Suga (U Osaka), M. Giorgoi (BESSY, HZB), W. Drube (DESY Photon Science), V.N. Strocov (Swiss Light Source), J. Denlinger (Advanced Light Source, LBNL), and T.-L. Lee (Diamond Light Source). Support by

  18. Study on the dipole moment of asphaltene molecules through dielectric measuring

    KAUST Repository

    Zhang, Long Li; Yang, Chao He; Wang, Ji Qian; Yang, Guo Hua; Li, Li; Li, Yan Vivian; Cathles, Lawrence

    2015-01-01

    The polarity of asphaltenes influences production, transportation, and refining of heavy oils. However, the dipole moment of asphaltene molecules is difficult to measure due to their complex composition and electromagnetic opaqueness. In this work, we present a convenient and efficient way to determine the dipole moment of asphaltene in solution by dielectric measurements alone without measurement of the refractive index. The dipole moment of n-heptane asphaltenes of Middle East atmospheric residue (MEAR) and Ta-He atmospheric residue (THAR) are measured within the temperature range of -60°C to 20°C. There is one dielectric loss peak in the measured solutions of the two types of asphaltene at the temperatures of -60°C or -40°C, indicating there is one type of dipole in the solution. Furthermore, there are two dielectric loss peaks in the measured solutions of the two kinds of asphaltene when the temperature rises above -5°C, indicating there are two types of dipoles corresponding to the two peaks. This phenomenon indicates that as the temperature increases above -5°C, the asphaltene molecules aggregate and present larger dipole moment values. The dipole moments of MEAR C7-asphaltene aggregates are up to 5 times larger than those before aggregation. On the other hand, the dipole moments of the THAR C7-asphaltene aggregates are only 3 times larger than those before aggregation. It will be demonstrated that this method is capable of simultaneously measuring multi dipoles in one solution, instead of obtaining only the mean dipole moment. In addition, this method can be used with a wide range of concentrations and temperatures.

  19. Structural and dielectric studies of Ce doped BaSnO3 perovskite nanostructures

    Science.gov (United States)

    Angel, S. Lilly; Deepa, K.; Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Undoped and Cerium (Ce) doped BaSnO3(BSO) nanostructures were synthesized by co-precipitation method. The cubic structure and perovskite phase were confirmed by X-ray diffraction (XRD). The crystallite size of BSO is 41nm and when Ce ion concentration is increased, the crystallite sizesdecreased. The nanocube, nanocuboids and nanorods are observed from SEM analysis. The purity of the undoped and doped samples are confirmed by EDS spectrum. For larger defects, wide band gap was obtained from UV-Vis and PL spectrum. The dielectric constants are increased at low frequencies when Ce impurities are introduced in the BSO matrix at Sn site.

  20. Tools to Study Interfaces for Superconducting, Thermoelectric, and Magnetic Materials at the University of Houston

    Science.gov (United States)

    2016-09-01

    AFRL-AFOSR-VA-TR-2016-0303 Tools to Study Interfaces for Superconducting ,Thermoelectric, and Magnetic Materials Paul C. W. Chu UNIVERSITY OF HOUSTON...8/28/2014 - 8/27/2016 Title: Tools to Study Interfaces for Superconducting , Thermoelectric, and Magnetic Materials at the University of Houston...effort. Tools to Study Interfaces for Superconducting , Thermoelectric, and Magnetic Materials at the University of Houston Grant/Contract Number AFOSR

  1. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Santhosh Kumar

    2014-06-01

    Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  2. Dielectric study of Poly(styrene- co -butadiene) Composites with Carbon Black, Silica, and Nanoclay

    KAUST Repository

    Vo, Loan T.; Anastasiadis, Spiros H.; Giannelis, Emmanuel P.

    2011-01-01

    at the polymer-nanoparticle interface. The glass transition temperature associated with the slower relaxation is used as a way to quantify the interaction strength between the polymer and the surface. Comparisons were made among composites containing nanoclay

  3. Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

    Directory of Open Access Journals (Sweden)

    Medeiros Jamilson Pinto

    1998-01-01

    Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

  4. Positron annihilation lifetime study of interfaces in ternary polymer blends

    International Nuclear Information System (INIS)

    Meghala, D; Ramya, P; Pasang, T; Raj, J M; Ranganathaiah, C; Williams, J F

    2013-01-01

    A new method based on positron lifetime spectroscopy is developed to characterize individual interfaces in ternary polymer blends and hence determine the composition dependent miscibility level. The method owes its origin to the Kirkwood-Risemann-Zimm (KRZ) model for the evaluation of the hydrodynamic interaction parameters (α ij ) which was used successfully for a binary blend with a single interface. The model was revised for the present work for ternary polymer blends to account for three interfaces. The efficacy of this method is shown for two ternary blends namely poly(styrene-co-acrylonitrile)/poly (ethylene-co-vinylacetate)/poly(vinyl chloride) (SAN/EVA/PVC) and polycaprolactone /poly(styrene-co-acrylonitrile)/poly(vinyl chloride) (PCL/SAN/PVC) at different compositions. An effective hydrodynamic interaction parameter, α eff , was introduced to predict the overall miscibility of ternary blends.

  5. A study on the optical, structural, electrical conductivity and dielectric properties of a lithium bismuth germanium tungsten glasses

    Energy Technology Data Exchange (ETDEWEB)

    Salem, Shaaban M., E-mail: shaabansalem@gmail.com [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt); Abdel-Khalek, E.K. [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt); Department of Physics, Faculty of Science, Jazan University (Saudi Arabia); Mohamed, E.A. [Department of Physics, Faculty of Science (Girl' s Branch), Al Azhar University, Nasr City, Cairo (Egypt); Department of Physics, Faculty of Science, Jazan University (Saudi Arabia); Farouk, M. [Department of Physics, Faculty of Science, Al Azhar University, Nasr City 11884, Cairo (Egypt); Department of Physics, Faculty of Science, Jazan University (Saudi Arabia)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer I report, for the first time, the effect of WO{sub 3} on Bi{sub 2}O{sub 3}, Li{sub 2}O, GeO{sub 2} and WO{sub 3} glasses through structural, optical, conductivity and dielectric studies. Black-Right-Pointing-Pointer Optical band gap E{sub op} for all types of electronic transitions, Urbach energy (E{sub r}), and refractive index determined. Black-Right-Pointing-Pointer The WO{sub 3} promotes as bitter constituent the reduction of W{sup 6+} to W{sup 5+} giving the bluish color. Black-Right-Pointing-Pointer Infrared spectra reveal characteristic GeO{sub 4}, GeO{sub 6}, Bi{sub 2}O{sub 3}, BiO{sub 6}, WO{sub 4} and WO{sub 6} units. Black-Right-Pointing-Pointer Based on ac and dc conductivity the conductivity increased and activation energies decreased with increase of WO{sub 3} content at all frequencies. - Abstract: Glasses in the system (65 - x)Bi{sub 2}O{sub 3}-15Li{sub 2}O-20GeO{sub 2}-xWO{sub 3} (where x = 2, 5 and 10 mol%) were prepared by normal melt quenching method. The change in density and molar volume in these glasses indicates the effect of WO{sub 3} on the glass structure. Fourier transform infrared (FT-IR) spectra show that these glasses are made up of GeO{sub 4}, GeO{sub 6}, BiO{sub 6}, BiO{sub 3}, WO{sub 4} and WO{sub 6} basic structural units. The structural units of BiO{sub 6}, GeO{sub 6} and WO{sub 6} increase with the increasing of WO{sub 3} content. The optical constants of these glasses are determined over a spectral range, providing the complex dielectric constant to be calculated. Higher values for the refractive index and dispersion are recorded due to the high polarizability of bismuth and tungsten ions. The values of the optical band gap E{sub g} for all types of electronic transitions and refractive index have been determined and discussed. The dc conductivity measured in the temperature range 423-623 K obeys Arrhenius law. The dielectric constant ({epsilon} Prime ), dielectric loss (tan {delta}) and

  6. A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication

    Directory of Open Access Journals (Sweden)

    Carlos E. Clement

    2017-01-01

    Full Text Available We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D electrowetting-on-dielectric (EWOD devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL capacitor, an ion gel dielectric offers two to three orders higher specific capacitance (c ≈ 10 μF/cm2 than that of conventional dielectrics such as SiO2. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has

  7. Positron and positronium annihilation in low-dielectric-constant films studied by a pulsed positron beam

    International Nuclear Information System (INIS)

    Suzuki, R.; Ohdaira, T.; Kobayashi, Y.; Ito, K.; Yu, R.S.; Shioya, Y.; Ichikawa, H.; Hosomi, H.; Ishikiriyama, K.; Shirataki, H.; Matsuno, S.; Xu, J.

    2004-01-01

    Positron and positronium annihilation in porous low-dielectric-constant (low-k) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and spin-on dielectric (SOD) have been investigated by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The ortho-positronium (o-Ps) lifetime strongly depends on the deposition condition. In general, PECVD low-k films have shorter o-Ps lifetimes than SOD low-k films, indicating PECVD low-k films have smaller pores. Since o-Ps diffusion and escaping from the surface occurs in most of porous SOD films, three-gamma annihilation measurement is important. To investigate o-Ps behavior in SOD films, we have carried out two-dimensional (2D) PALS measurement, which measures annihilation time and pulse-height of the scintillation detector simultaneously. Monte-Carlo simulation of the o-Ps diffusion and escaping in porous films has been carried out to simulate the 2D-PALS results. (orig.)

  8. The non-separability of ''dielectric'' and ''mechanical'' friction in molecular systems: A simulation study

    International Nuclear Information System (INIS)

    Kumar, P. V.; Maroncelli, M.

    2000-01-01

    Simulations of the time-dependent friction controlling rotational, translational, and vibrational motions of dipolar diatomic solutes in acetonitrile and methanol have been used to examine the nature of ''dielectric'' friction. The way in which electrical interactions increase the friction beyond that present in nonpolar systems is found to be rather different than what is anticipated by most theories of dielectric friction. Long-range electrostatic forces do not simply add an independent contribution to the friction due to short-ranged or ''mechanical'' sources (modeled here in terms of Lennard-Jones forces). Rather, the electrical and Lennard-Jones contributions are found to be strongly anticorrelated and not separable in any useful way. For some purposes, the mechanism by which electrical interactions increase friction is better viewed as a static electrostriction effect: electrical forces cause a subtle increase in atomic density in the solute's first solvation shell, which increases the amplitude of the force fluctuations derived from the Lennard-Jones interactions, i.e., the mechanical friction. However, electrical interactions also modify the dynamics of the friction, typically adding a long-time tail, which significantly increases the integral friction. Both of these effects must be included in a correct description of friction in the presence of polar interactions. (c) 2000 American Institute of Physics

  9. [Study on formation process of honeycomb pattern in dielectric barrier discharge by optical emission spectrum].

    Science.gov (United States)

    Dong, Li-Fang; Zhu, Ping; Yang, Jing; Zhang, Yu

    2014-04-01

    The authors report on the first investigation of the variations in the plasma parameters in the formation process of the honeycomb pattern in a dielectric barrier discharge by optical emission spectrum in argon and air mixture. The discharge undergoes hexagonal lattice, concentric spot-ring pattern and honeycomb pattern with the applied voltage increasing. The molecular vibration temperature, electron excitation temperature and electronic density of the three kinds of patterns were investigated by the emission spectra of nitrogen band of second positive system (C3pi(u) --> B3 pi(g)), the relative intensity ratio method of spectral lines of Ar I 763.51 nm (2P(6) --> 1S(5)) and Ar I 772.42 nm (2P(2) -->1S(3)) and the broadening of spectral line 696.5 nm respectively. It was found that the molecular vibration temperature and electron excitation temperature of the honeycomb pattern are higher than those of the hexagonal lattice, but the electron density of the former is lower than that of the latter. The discharge powers of the patterns were also measured with the capacitance method. The discharge power of the honeycomb pattern is much higher than that of the hexagonal lattice. These results are of great importance to the formation mechanism of the patterns in dielectric barrier discharge.

  10. Temperature dependent dielectric relaxation and ac-conductivity of alkali niobate ceramics studied by impedance spectroscopy

    Science.gov (United States)

    Yadav, Abhinav; Mantry, Snigdha Paramita; Fahad, Mohd.; Sarun, P. M.

    2018-05-01

    Sodium niobate (NaNbO3) ceramics is prepared by conventional solid state reaction method at sintering temperature 1150 °C for 4 h. The structural information of the material has been investigated by X-ray diffraction (XRD) and Field emission scanning electron microscopy (FE-SEM). The XRD analysis of NaNbO3 ceramics shows an orthorhombic structure. The FE-SEM micrograph of NaNbO3 ceramics exhibit grains with grain sizes ranging between 1 μm to 5 μm. The surface coverage and average grain size of NaNbO3 ceramics are found to be 97.6 % and 2.5 μm, respectively. Frequency dependent electrical properties of NaNbO3 is investigated from room temperature to 500 °C in wide frequency range (100 Hz-5 MHz). Dielectric constant, ac-conductivity, impedance, modulus and Nyquist analysis are performed. The observed dielectric constant (1 kHz) at transition temperature (400 °C) are 975. From conductivity analysis, the estimated activation energy of NaNbO3 ceramics is 0.58 eV at 10 kHz. The result of Nyquist plot shows that the electrical behavior of NaNbO3 ceramics is contributed by grain and grain boundary responses. The impedance and modulus spectrum asserts that the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation in NaNbO3.

  11. Magnetic and dielectric study of Fe-doped CdSe nanoparticles

    Science.gov (United States)

    Das, Sayantani; Banerjee, Sourish; Bandyopadhyay, Sudipta; Sinha, Tripurari Prasad

    2018-01-01

    Nanoparticles of cadmium selenide (CdSe) and Fe (5% and 10%) doped CdSe have been synthesized by soft chemical route and found to have cubic structure. The magnetic field dependent magnetization measurement of the doped samples indicates the presence of anti-ferromagnetic order. The temperature dependent magnetization (M-T) measurement under zero field cooled and field cooled conditions has also ruled out the presence of ferromagnetic component in the samples at room temperature as well as low temperature. In order to estimate the anti-ferromagnetic coupling among the doped Fe atoms, an M-T measurement at 500 Oe has been carried out, and the Curie-Weiss temperature θ of the samples has been estimated from the inverse of susceptibility versus temperature plots. The dielectric relaxation peaks are observed in the spectra of imaginary part of dielectric constant. The temperature dependent relaxation time is found to obey the Arrhenius law having activation energy 0.4 eV for Fe doped samples. The frequency dependent conductivity spectra are found to obey the power law. [Figure not available: see fulltext.

  12. Theoretical Study of the Transverse Dielectric Constant of Superlattices and Their Alloys. Ph.D Thesis

    Science.gov (United States)

    Kahen, K. B.

    1986-01-01

    The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.

  13. Discrete Element study of granular material - Bumpy wall interface behavior

    Science.gov (United States)

    El Cheikh, Khadija; Rémond, Sébastien; Pizette, Patrick; Vanhove, Yannick; Djelal, Chafika

    2016-09-01

    This paper presents a DEM study of a confined granular material sheared between two parallel bumpy walls. The granular material consists of packed dry spherical particles. The bumpiness is modeled by spheres of a given diameter glued on horizontal planes. Different bumpy surfaces are modeled by varying diameter or concentration of glued spheres. The material is sheared by moving the two bumpy walls at fixed velocity. During shear, the confining pressure applied on each bumpy wall is controlled. The effect of wall bumpiness on the effective friction coefficient and on the granular material behavior at the bumpy walls is reported for various shearing conditions. For given bumpiness and confining pressure that we have studied, it is found that the shear velocity does not affect the shear stress. However, the effective friction coefficient and the behavior of the granular material depend on the bumpiness. When the diameter of the glued spheres is larger than about the average grains diameter of the medium, the latter is uniformly sheared and the effective friction coefficient remains constant. For smaller diameters of the glued spheres, the effective friction coefficient increases with the diameter of glued spheres. The influence of glued spheres concentration is significant only for small glued spheres diameters, typically half of average particle diameter of the granular material. In this case, increasing the concentration of glued spheres leads to a decrease in effective friction coefficient and to shear localization at the interface. For different diameters and concentrations of glued spheres, we show that the effect of bumpiness on the effective friction coefficient can be characterized by the depth of interlocking.

  14. Electronic effects and fundamental physics studied in molecular interfaces.

    Science.gov (United States)

    Pope, Thomas; Du, Shixuan; Gao, Hong-Jun; Hofer, Werner A

    2018-05-29

    Scanning probe instruments in conjunction with a very low temperature environment have revolutionized the ability of building, functionalizing, and analysing two dimensional interfaces in the last twenty years. In addition, the availability of fast, reliable, and increasingly sophisticated methods to simulate the structure and dynamics of these interfaces allow us to capture even very small effects at the atomic and molecular level. In this review we shall focus largely on metal surfaces and organic molecular compounds and show that building systems from the bottom up and controlling the physical properties of such systems is no longer within the realm of the desirable, but has become day to day reality in our best laboratories.

  15. Dielectric, ferroelectric and impedance spectroscopic studies of Mn and W modified AgNbO{sub 3} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Muduli, Rakesh; Kumar, Pawan, E-mail: pawankumar@nitrkl.ac.in; Panda, Ranjit Kumar; Panigrahi, Simanchal

    2016-09-01

    In the present study, the effect of heterovalent ion doping on the dielectric and ferroelectric behaviour of AgNbO{sub 3}/AN system was investigated. 0.04 mol of manganese (Mn{sup 4+}) and tungsten (W{sup 6+}) ions of smaller ionic radii were substituted in place of niobium (Nb{sup 5+}) ions in the AN system for generating hole and electron rich compounds, respectively. Better dielectric properties with improved saturation polarisations were observed in the heterovalent ions modified AN ceramics. The relaxation behaviour of the modified AN ceramics was investigated by impedance spectroscopy study and intrinsic grain conduction was found to be dominating in the chosen frequency and temperature ranges. The reduced resistivity of the modified AN ceramics was discussed in terms of calculated activation energy. The significant reduction of the activation energy was proposed as the possible cause of early arrival of relaxation peak in the electron doped AN system. - Highlights: • Holes and electrons doping effect on electrical properties of AN system. • Doping of holes significantly enhanced the ferroelectricity. • Doping of electrons reduced activation energy. • Reduced activation energy was related with grains relaxation process.

  16. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure

    Science.gov (United States)

    Sa, Yoonki

    Continuous scaling down of critical dimensions in interconnect structures requires the use of ultralow dielectric constant (k) films as interlayer dielectrics to reduce resistance-capacitance delays. Porous carbon-doped silicon oxide (p-SiCOH) dielectrics have been the leading approach to produce these ultralow-k materials. However, embedding of porosity into dielectric layer necessarily decreases the mechanical reliability and increases its susceptibility to adsorption of potentially deleterious chemical species during device fabrication process. Among those, exposure of porous-SiCOH low-k (PLK) dielectrics to oxidizing plasma environment causes the increase in dielectric constant and their vulnerability to mechanical instability of PLKs due to the loss of methyl species and increase in moisture uptake. These changes in PLK properties and physical stability have been persisting challenges for next-generation interconnects because they are the sources of failure in interconnect integration as well as functional and physical failures appearing later in IC device manufacturing. It is therefore essential to study the fundamentals of the interactions on p-SiCOH matrix induced by plasma exposure and find an effective and easy-to-implement way to reverse such changes by repairing damage in PLK structure. From these perspectives, the present dissertation proposes 1) a fundamental understanding of structural transformation occurring during oxidative plasma exposure in PLK matrix structure and 2) its restoration by using silylating treatment, soft x-ray and inert Ar-plasma radiation, respectively. Equally important, 3) as an alternative way of increasing the thermo-mechanical reliability, PLK dielectric film with an intrinsically robust structure by controlling pore morphology is fabricated and investigated. Based on the investigations, stability of PLK films studied by time-dependent ball indentation tester under the elevated temperature, variation in film thickness and

  17. Synchrotron X-ray studies of liquid-vapor interfaces

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage

    1986-01-01

    The density profile ρ(z) across a liquid-vapor interface may be determined by the reflectivity R(θ) of X-rays at grazing angle incidence θ. The relation between R(θ) and ρ(z) is discussed, and experimental examples illustrating thermal roughness of simple liquids and smectic layering of liquid...

  18. The Work-Study Interface: Similarities and Differences between Ethnic Minority and Ethnic Majority Students

    Science.gov (United States)

    Meeuwisse, Marieke; de Meijer, Lonneke A.; Born, Marise Ph.; Severiens, Sabine E.

    2017-01-01

    Given the poorer academic outcomes of non-Western ethnic minority students compared to ethnic majority students, we investigated whether differences exist in work-study interface between ethnic groups. We tested a work-study interface model, in which the work-related factors work-study congruence, job control, job demands, work hours, job…

  19. Simulation Studies of the Dielectric Grating as an Accelerating and Focusing Structure

    International Nuclear Information System (INIS)

    Soong, Ken; Peralta, E.A.; Byer, R.L.; Colby, E.

    2011-01-01

    A grating-based design is a promising candidate for a laser-driven dielectric accelerator. Through simulations, we show the merits of a readily fabricated grating structure as an accelerating component. Additionally, we show that with a small design perturbation, the accelerating component can be converted into a focusing structure. The understanding of these two components is critical in the successful development of any complete accelerator. The concept of accelerating electrons with the tremendous electric fields found in lasers has been proposed for decades. However, until recently the realization of such an accelerator was not technologically feasible. Recent advances in the semiconductor industry, as well as advances in laser technology, have now made laser-driven dielectric accelerators imminent. The grating-based accelerator is one proposed design for a dielectric laser-driven accelerator. This design, which was introduced by Plettner, consists of a pair of opposing transparent binary gratings, illustrated in Fig. 1. The teeth of the gratings serve as a phase mask, ensuring a phase synchronicity between the electromagnetic field and the moving particles. The current grating accelerator design has the drive laser incident perpendicular to the substrate, which poses a laser-structure alignment complication. The next iteration of grating structure fabrication seeks to monolithically create an array of grating structures by etching the grating's vacuum channel into a fused silica wafer. With this method it is possible to have the drive laser confined to the plane of the wafer, thus ensuring alignment of the laser-and-structure, the two grating halves, and subsequent accelerator components. There has been previous work using 2-dimensional finite difference time domain (2D-FDTD) calculations to evaluate the performance of the grating accelerator structure. However, this work approximates the grating as an infinite structure and does not accurately model a

  20. Numerical study of the dielectric liquid around an electrical discharge generated vapor bubble in ultrasonic assisted EDM.

    Science.gov (United States)

    Shervani-Tabar, Mohammad T; Mobadersany, Nima

    2013-07-01

    In electrical discharge machining due to the electrical current, very small bubbles are created in the dielectric fluid between the tool and the workpiece. Increase of the number of bubbles and their growth in size generate a single bubble. The bubble has an important role in electrical discharge machining. In this paper the effect of ultrasonic vibration of the tool and the velocity fields and pressure distribution in the dielectric fluid around the bubble in the process of electrical discharge machining are studied numerically. The boundary integral equation method is applied for the numerical solution of the problem. It is shown that ultrasonic vibration of the tool has great influence on the evolution of the bubble, fluid behavior and the efficiency of the machining in EDM. At the last stages of the collapse phase of the bubble, a liquid jet develops on the bubble which has different shapes. Due to the different cases, and a high pressure region appears just near the jet of the bubble. Also the fluid particles have the highest relative velocity just near the liquid jet of the bubble. Copyright © 2012 Elsevier B.V. All rights reserved.

  1. Dielectric properties of liquid systems: study of interactions in the systems carbon tetrachloride with benzene, toluene, and p-xylene

    Directory of Open Access Journals (Sweden)

    Adrián H. Buep

    2014-12-01

    Full Text Available Intermolecular associations in liquid systems of non-polar and slightly polar compounds were studied through excess molar volumes (VEM and excess dielectric properties (εE and n2ED for mixtures of carbon tetrachloride (CCl4 with benzene (C6H6, toluene (C6H5CH3, and p-xylene (p-(CH32C6H4. These excess properties were calculated from measurements of density (ρ, static permittivity (ε, and refractive index (nD over the whole range of concentrations at 298.15 K. The values of the excess dielectric properties for these mixtures were fitted in two different ways, one through least squares using the Redlich–Kister equation and the other using a model developed to explain deviations from ideality. The first fit was found to be descriptive while the second gave the equilibrium constant values for the interaction products actually formed in the mixtures and the respective electronic polarizabilities and dipole moments, indicating the existence of interaction products.

  2. Experimental study on behaviors of dielectric elastomer based on acrylonitrile butadiene rubber

    Science.gov (United States)

    An, Kuangjun; Chuc, Nguyen Huu; Kwon, Hyeok Yong; Phuc, Vuong Hong; Koo, Jachoon; Lee, Youngkwan; Nam, Jaedo; Choi, Hyouk Ryeol

    2010-04-01

    Previously, the dielectric elastomer based on Acrylonitrile Butadiene Rubber (NBR), called synthetic elastomer has been reported by our group. It has the advantages that its characteristics can be modified according to the requirements of performances, and thus, it is applicable to a wide variety of applications. In this paper, we address the effects of additives and vulcanization conditions on the overall performance of synthetic elastomer. In the present work, factors to have effects on the performances are extracted, e.g additives such as dioctyl phthalate (DOP), barium titanium dioxide (BaTiO3) and vulcanization conditions such as dicumyl peroxide (DCP), cross-linking times. Also, it is described how the performances can be optimized by using DOE (Design of Experiments) technique and experimental results are analyzed by ANOVA (Analysis of variance).

  3. Synthesis, growth, structural, optical, thermal, dielectric and mechanical studies of an organic guanidinium p-nitrophenolate crystal

    Science.gov (United States)

    Dhavamurthy, M.; Peramaiyan, G.; Mohan, R.

    2014-08-01

    Guanidinium p-nitrophenolate (GUNP), a novel organic compound, was synthesized and crystals were grown from methanol solution by a slow evaporation solution growth technique. A single crystal X-ray diffraction study elucidated the crystal structure of GUNP belonging to the orthorhombic crystal system with space group Pnma. Thermal studies revealed that the GUNP crystal is thermally stable up to 192 °C. The lower cut-off wavelength of GUNP was found to be 505 nm by UV-vis-NIR spectral studies. The luminescence properties of the GUNP crystal were investigated. The three independent tensor coefficients ε11, ε22 and ε33 of the dielectric permittivity were calculated. The mechanical properties of the grown crystal were studied by Vickers' microhardness hardness technique.

  4. Growth and dielectric, mechanical, thermal and etching studies of an organic nonlinear optical L-arginine trifluoroacetate (LATF) single crystal

    International Nuclear Information System (INIS)

    Arjunan, S.; Mohan Kumar, R.; Mohan, R.; Jayavel, R.

    2008-01-01

    L-arginine trifluoroacetate, an organic nonlinear optical material, has been synthesized from aqueous solution. Bulk single crystal of dimension 57 mm x 5 mm x 3 mm has been grown by temperature lowering technique. Powder X-ray diffraction studies confirmed the monoclinic structure of the grown L-arginine trifluoroacetate crystal. Linear optical property of the grown crystal has been studied by UV-vis spectrum. Dielectric response of the L-arginine trifluoroacetate crystal was analysed for different frequencies and temperatures in detail. Microhardness study on the sample reveals that the crystal possesses relatively higher hardness compared to many organic crystals. Thermal analyses confirmed that the L-arginine trifluoroacetate material is thermally stable upto 212 deg. C. The etching studies have been performed to assess the perfection of the L-arginine trifluoroacetate crystal. Kurtz powder second harmonic generation test confirms the nonlinear optical properties of the as-grown L-arginine trifluoroacetate crystal

  5. X-Ray Scattering Studies of the Liquid-Vapor Interface of Gallium.

    Science.gov (United States)

    Kawamoto, Eric Hitoshi

    A UHV system was developed for performing X-ray scattering studies and in situ analyses of liquid metal surfaces. A nearly ideal choice for this study, gallium has a melting point just above room temperature; is amenable to handling in both air and vacuum; its surface oxides can be removed while its cleanliness is maintained and monitored. Using argon glow-discharge sputtering techniques to remove intervening surface oxides, thin wetting layers of gallium were prepared atop nonreactive substrates, to be used as samples suited for liquid surface scattering experiments. Preliminary measurements of X-ray reflectivity from the liquid-vapor interface of gallium were performed with the X-ray UHV chamber configured for use in conjunction with liquid surface spectrometers at two synchrotron beamlines. A novel technique for carrying out and interpreting scattering measurements from curved liquid surfaces was demonstrated. The energy tunability and intense focused white beam flux from a wiggler source was shown to place within reach the large values of wavevector transfer at which specular reflectivity data yield small length scale information about surface structure. Various theoretical treatments and simulations predict quasi-lamellar ordering of atoms near the free surface of metallic liquids due to energetics particular to metals (electron delocalization, the dependence of system energy on ion and electron densities, surface tension and electrostatic energy). However, the experimental data reported to date is insufficient to distinguish between a monotonic, sigmoidal electron density profile found at the free surfaces of dielectric liquids, and the damped oscillatory layer-like profiles anticipated for metallic liquids. Out to a wavevector transfer of Q = 0.55 A ^{-1}, the reflectivity data measured from a curved Ga surface is not inconsistent with what is expected for a liquid-vapor electron density profile of Gaussian width sigma = 1.3 +/- 0.2 A. Subsequent

  6. Dielectric inspection of erythrocyte morphology

    International Nuclear Information System (INIS)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-01-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes

  7. Dielectric inspection of erythrocyte morphology

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio [Life Science Laboratory, Materials Laboratories, Sony Corporation, Sony Bioinformatics Center, Tokyo Medical and Dental University, Bunkyo-ku, Tokyo 113-8510 (Japan); Asami, Koji [Laboratory of Molecular Aggregation Analysis, Division of Multidisciplinary Chemistry, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)], E-mail: Yoshihito.Hayashi@jp.sony.com

    2008-05-21

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  8. Adhesion properties of Cu(111)/α-quartz (0001) interfaces: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Wenshan, E-mail: wenshan@mail.xjtu.edu.cn; Wu, Lianping; Shen, Shengping, E-mail: sshen@mail.xjtu.edu.cn

    2017-05-17

    The fundamental properties of Cu/SiO{sub 2} interface are worth studying because they impact the quality and performance of silicon-based microelectronics and related devices. Using the charge-optimized many-body (COMB) potential in this study, we present a molecular dynamics simulation study of the structural, adhesive and electronic properties of Cu(111)/α-quartz SiO{sub 2} (0001) interfaces with two different crystalline orientations and various terminations by double-oxygens (OO), single-oxygen(O) and silicon(Si). For the equilibrated interfaces, the largest adhesion energies correspond to the oxygen richest OO-terminated interface in which the oxidation level of Cu is highest due to the largest charge transfer across the interface. In particular, we also investigate the properties of a series of nonequilibrated OO-, O- and Si-terminated interfaces that are created from their equilibrated counterparts by introducing vacancies of different numbers and different types. It is found that the adhesion energies of interfaces mostly decrease upon vacancy introductions only except for Si vacancies added in the Si-terminated interface. For all nonequilibrated interfaces of different terminations, we found a linear correlation between adhesive energy and area average excess charge transfer in Cu.

  9. Design and Development of Embedded Based System for the Measurement of Dielectric Constant Spectroscopy for Liquids

    Directory of Open Access Journals (Sweden)

    V. V. Ramana C. H.

    2010-09-01

    Full Text Available An embedded based system for the measurement of dielectric constant spectroscopy (for frequencies 1 kHz, 10 kHz, 100 kHz, 1 MHz and 10 MHz for liquids has been designed and developed. It is based on the principle that the change in frequency of an MAX 038 function generator, when the liquid forms the dielectric medium of the dielectric cell, is measured with a microcontroller. Atmel’s AT89LP6440 microcontroller is used in the present study. Further, an LCD module is interfaced with the microcontroller in 4-bit mode, which reduces the hardware complexity. Software is developed in C using Keil’s C-cross compiler. The instrument system covers a wide range of dielectric constants for various liquids at various frequencies and at different temperatures. The system is quite successful in the measurement of dielectric constant in liquids with an accuracy of ± 0.01 %. The dielectric constant is very dependent on the frequency of their measurement. No one-measurement technique is available, however, that will give the frequency range needed to characterize the liquid sample. The paper deals with the hardware and software details.

  10. The Importance of Interfaces: A HW/SW Codesign Case Study

    DEFF Research Database (Denmark)

    Jensen, Dan C. Raun; Madsen, Jan; Pedersen, Steen

    1997-01-01

    This paper presents a codesign case study in image analysis. The main objective is to stress the importance of handling HW/SW interfaces more precisely at the system level. In the presented case study, there is an intuitive and simple HW/SW interface, which is based upon the functional modules...

  11. Surface and interface strains studied by x-ray diffraction

    International Nuclear Information System (INIS)

    Akimoto, Koichi; Emoto, Takashi; Ichimiya, Ayahiko

    1998-01-01

    The authors have developed a technique of X-ray diffraction in order to measure strain fields near semiconductor surface and interface. The diffraction geometry is using the extremely asymmetric Bragg-case bulk reflection of a small incident angle to the surface and a large angle exiting from the surface. The incident angle of the X-rays is set near critical angle of total reflection by tuning X-ray energy of synchrotron radiation at the Photon Factory, Japan. For thermally grown-silicon oxide/Si(100) interface, the X-ray intensity of the silicon substrate 311 reflection has been measured. From comparison of the full width at half maxima (FWHM) of X-ray rocking curves of various thickness of silicon oxides, it has been revealed that silicon substrate lattice is highly strained in the thin (less than about 5 nm) silicon oxide/silicon system. In order to know the original silicon surface strain, the authors have also performed the same kind of measurements in the ultra-high vacuum chamber. A clean Si(111) 7x7 surface gives sharper X-ray diffraction peak than that of the native oxide/Si(111) system. From these measurements, it is concluded that the thin silicon oxide film itself gives strong strain fields to the silicon substrates, which may be the reason of the existence of the structural transition layer at the silicon oxide/Si interface

  12. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  13. Report on a comprehensive research study (home welfare apparatus system - interface); Sogo chosa kenkyu (zaitaku fukushi kiki system - interface) hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    In the light of the increasing role of welfare at home with the advance of the aging society, the paper conducted an investigational study on the R and D of the home welfare apparatus system - interface. In the study, making the most of the leading home care apparatus systems (welfare technohouses) installed at seven places in the country, the paper carried out a stay experiment on how the life is in the welfare house into which home welfare apparatus is integrated, and an experiment to assess biological data on aged people. Especially as to the support apparatus used for smooth life motions in houses such as movement, excretion and bathing, examined were the linkage with house bodies, care apparatus used, mutual interface with welfare apparatus, etc. By the experiments to assess these home welfare apparatus, an analytical study was conducted on the points to be improved in welfare apparatus and housing equipment, and at the same time on the course of the research/development. Concerning a system for the research study, a research promotion committee was established in Technology Research Association of Medical and Welfare Apparatus, the members of which are learned persons from the industrial circle, the government and universities. 111 figs., 36 tabs.

  14. Study of dielectric materials irradiated with electron beam by using the Pulsed Electro-Acoustic (PEA) method

    International Nuclear Information System (INIS)

    Nguyen, Xuan Truong

    2014-01-01

    Dielectric materials are frequently used as electrical insulators in spatial applications. Due to their dielectric nature, these dielectrics are likely to accumulate electric charges during their service. Under certain critical conditions, these internal or surface space charges can lead to an electrostatic surface discharge. To understand these phenomena, an experimental device has been developed in the laboratory. This device allows us to simulate the electronic irradiation conditions encountered in space. The aim of our study is to characterize the electrical behavior of insulating materials irradiated by electron beam, to investigate charge storage and transport phenomena and anticipate electrostatic discharges. In this work, the device based on the Pulsed Electro-Acoustic (PEA) technique has been chosen. It has been implanted in the irradiation chamber. It allows us to obtain the spatial distribution of charges injected between two periods of irradiation and during relaxation. However the PEA method offers a limited resolution and does not allow the detection of injected charges when they are too close to the surface. First, we performed a parameters signal processing analysis that we will call the spreading factor and the resolution factor. The preliminary study post-irradiation in air of experimental measurements showed that the resolution factor choice is important for the analysis and interpretation of the signal when the space charge is localized near the surface. Then, a comparison to the spreading parameter used in some deconvolution technique was established. In the second time, space charge distribution measurements in vacuum have been carried out on Poly Tetra Fluoro Ethylene (PTFE) films irradiated by an electron beam in the range [10-100] keV. Results from irradiation periods with increasing energies [10 keV → 100 keV] of the electron beam have been compared with results from irradiation periods with decreasing energies [100 keV → 10 keV]. In

  15. Elastic properties of surfactant monolayers at liquid-liquid interfaces: A molecular dynamics study

    DEFF Research Database (Denmark)

    Laradji, Mohamed; Mouritsen, Ole G.

    2000-01-01

    Using a simple molecular model based on the Lennard-Jones potential, we systematically study the elastic properties of liquid-liquid interfaces containing surfactant molecules by means of extensive and large-scale molecular dynamics simulations. The main elastic constants of the interface, corres...

  16. Waterjet cutting of periprosthetic interface tissue in loosened hip prostheses: an in vitro feasibility study

    NARCIS (Netherlands)

    Kraaij, Gert; Tuijthof, Gabrielle J. M.; Dankelman, Jenny; Nelissen, Rob G. H. H.; Valstar, Edward R.

    2015-01-01

    Waterjet cutting technology is considered a promising technology to be used for minimally invasive removal of interface tissue surrounding aseptically loose hip prostheses. The goal of this study was to investigate the feasibility of waterjet cutting of interface tissue membrane. Waterjets with 0.2

  17. Studies on interfaces between immiscible polymers by neutron reflectivity

    International Nuclear Information System (INIS)

    Torikai, Naoya; Noda, Ichiro; Matsushita, Yushu; Tasaki, Seiji; Ebisawa, Toru; Karim, Alamgir; Han, C.C.

    1995-01-01

    Segment distributions of partially deuterium-labeled styrene-2-vinylpyridine block copolymers in lamellar microphase-separated structure were investigated by neutron reflectivity (NR) measurements. Each component lamellae were alternatively stacked in spin-coated thin films and interfacial thickness between those lamellae was about 45 A. Also, it was found that the segments of block chains near a chemical junction point connecting different component blocks are strongly localized in the vicinity of lamellar interface, while those on the free ends are localized at the center of lamellar microdomain with a fairly wide distribution. (author)

  18. Studies on interfaces between immiscible polymers by neutron reflectivity

    Energy Technology Data Exchange (ETDEWEB)

    Torikai, Naoya; Noda, Ichiro [Nagoya Univ. (Japan). School of Engineering; Matsushita, Yushu; Tasaki, Seiji; Ebisawa, Toru; Karim, Alamgir; Han, C.C.

    1995-06-01

    Segment distributions of partially deuterium-labeled styrene-2-vinylpyridine block copolymers in lamellar microphase-separated structure were investigated by neutron reflectivity (NR) measurements. Each component lamellae were alternatively stacked in spin-coated thin films and interfacial thickness between those lamellae was about 45 A. Also, it was found that the segments of block chains near a chemical junction point connecting different component blocks are strongly localized in the vicinity of lamellar interface, while those on the free ends are localized at the center of lamellar microdomain with a fairly wide distribution. (author).

  19. A Simulation Study of the Virtual Interface Architecture

    International Nuclear Information System (INIS)

    Hu, Tan Chang; Stans, Leonard; Tarman, Thomas D.

    1999-01-01

    The Virtual Interface Architecture (VIA) is an emerging standard for interconnecting commodity computing nodes into a cluster. Since VIA protocol. operations are implemented outside the operating system kernel (often, entirely in hardware), VIA transfers can be performed at very low delay, high throughput, and minimal CPU overhead. This makes VIA ideal when building large clusters that perform complex simulations of physical events, However, the scaling properties of VIA are less clear. This paper describes the design and results of a simulation model developed in OPNET to investigate VIA's ability to scale to clusters of> 1000 nodes

  20. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1983-06-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)epsilong that are attached to the links b = (x+esub(μ),x) of the lattice and take their values in the linear space g which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)osub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportionalosub(i)osub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson loop expectation values show an area law decay, if the Euclidean action has certain qualitative features which imply that PHI = 0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  1. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1984-01-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)element ofG that are attached to the links b = (x+esub(μ), x) of the lattice and take their values in the linear space G which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)sigmasub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportional sigmasub(i)sigmasub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder-Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson-loop expectation values show an area law decay, if the euclidean action has certain qualitative features which imply that PHI=0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  2. Study of influence of fuel on dielectric and ferroelectric properties of bismuth titanate ceramics synthesized using solution based combustion technique

    International Nuclear Information System (INIS)

    Subohi, Oroosa; Malik, M M; Kurchania, Rajnish; Kumar, G S

    2015-01-01

    The effect of fuel characteristics on the processing and properties of bismuth titanate (BIT) ceramics obtained by solution combustion route using different fuels are reported in this paper. Dextrose, urea and glycine were used as fuel in this study. The obtained bismuth titanate ceramics were characterized by using XRD, SEM at different stages of sample preparation. It was observed that BIT obtained by using dextrose as fuel shows higher dielectric constant and higher remnant polarization due to smaller grain size and lesser c-axis growth as compared to the samples with urea and glycine as fuel. The electrical behavior of the samples with respect to temperature and frequency was also investigated to understand relaxation phenomenon. (paper)

  3. Synthesis and study of the optical properties of dielectric Bragg reflectors infiltrated with 6G-Rhodamine

    International Nuclear Information System (INIS)

    Gómez-Barojas, E; Aca-López, V; Luna-López, J A; Sánchez-Mora, E; Silva-González, R

    2014-01-01

    We report the study of the optical properties of 6G-Rhodamine (Rhd) infiltrated porous silicon dielectric Bragg reflectors (DBRs) with 31 constituent periods. The DBRs were obtained by an electrochemical anodizing process of Si in a two electrodes Teflon cell. The porosity was determined by gravimetric measurements on single Porous silicon (PSi) layers. Based on the characterization results of single layers the DBRs were synthesized. After anodizing, the DBRs were silanized with a 3-mercaptopropyltrimethoxysilane solution and functionalized with Rhd solutions at different concentrations. Cross section scanning electron micrographs show that the DBRs synthesis was successful. After each preparation step, Reflectance and Fluorescence (FL) spectra were recorded. These spectra show that as the Rhd concentration in solution is increased the stop band intensity as well as the FL intensity are enhanced due to constructive interference effects

  4. Structure and dynamics of hyaluronic acid semidilute solutions: a dielectric spectroscopy study.

    Science.gov (United States)

    Vuletić, T; Dolanski Babić, S; Ivek, T; Grgicin, D; Tomić, S; Podgornik, R

    2010-07-01

    Dielectric spectroscopy is used to investigate fundamental length scales describing the structure of hyaluronic acid sodium salt (Na-HA) semidilute aqueous solutions. In salt-free regime, the length scale of the relaxation mode detected in MHz range scales with HA concentration as c(HA)(-0.5) and corresponds to the de Gennes-Pfeuty-Dobrynin correlation length of polyelectrolytes in semidilute solution. The same scaling was observed for the case of long, genomic DNA. Conversely, the length scale of the mode detected in kilohertz range also varies with HA concentration as c(HA)(-0.5) which differs from the case of DNA (c(DNA)(-0.25)). The observed behavior suggests that the relaxation in the kilohertz range reveals the de Gennes-Dobrynin renormalized Debye screening length, and not the average size of the chain, as the pertinent length scale. Similarly, with increasing added salt the electrostatic contribution to the HA persistence length is observed to scale as the Debye length, contrary to scaling pertinent to the Odijk-Skolnick-Fixman electrostatic persistence length observed in the case of DNA. We argue that the observed features of the kilohertz range relaxation are due to much weaker electrostatic interactions that lead to the absence of Manning condensation as well as a rather high flexibility of HA as compared to DNA.

  5. Brillouin light scattering studies of the mechanical properties of ultrathin low-k dielectric films

    Science.gov (United States)

    Link, A.; Sooryakumar, R.; Bandhu, R. S.; Antonelli, G. A.

    2006-07-01

    In an effort to reduce RC time delays that accompany decreasing feature sizes, low-k dielectric films are rapidly emerging as potential replacements for silicon dioxide (SiO2) at the interconnect level in integrated circuits. The main challenge in low-k materials is their substantially weaker mechanical properties that accompany the increasing pore volume content needed to reduce k. We show that Brillouin light scattering is an excellent nondestructive technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for a direct measure of the principal elastic constants that completely characterize the mechanical properties of these ultrathin films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. We further show that the values obtained by this method agree well with other experimental techniques such as nanoindentation and picosecond laser ultrasonics.

  6. Rigorous numerical study of strong microwave photon-magnon coupling in all-dielectric magnetic multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Maksymov, Ivan S., E-mail: ivan.maksymov@uwa.edu.au [School of Physics M013, The University of Western Australia, 35 Stirling Highway, Crawley, WA 6009 (Australia); ARC Centre of Excellence for Nanoscale BioPhotonics, School of Applied Sciences, RMIT University, Melbourne, VIC 3001 (Australia); Hutomo, Jessica; Nam, Donghee; Kostylev, Mikhail [School of Physics M013, The University of Western Australia, 35 Stirling Highway, Crawley, WA 6009 (Australia)

    2015-05-21

    We demonstrate theoretically a ∼350-fold local enhancement of the intensity of the in-plane microwave magnetic field in multilayered structures made from a magneto-insulating yttrium iron garnet (YIG) layer sandwiched between two non-magnetic layers with a high dielectric constant matching that of YIG. The enhancement is predicted for the excitation regime when the microwave magnetic field is induced inside the multilayer by the transducer of a stripline Broadband Ferromagnetic Resonance (BFMR) setup. By means of a rigorous numerical solution of the Landau-Lifshitz-Gilbert equation consistently with the Maxwell's equations, we investigate the magnetisation dynamics in the multilayer. We reveal a strong photon-magnon coupling, which manifests itself as anti-crossing of the ferromagnetic resonance magnon mode supported by the YIG layer and the electromagnetic resonance mode supported by the whole multilayered structure. The frequency of the magnon mode depends on the external static magnetic field, which in our case is applied tangentially to the multilayer in the direction perpendicular to the microwave magnetic field induced by the stripline of the BFMR setup. The frequency of the electromagnetic mode is independent of the static magnetic field. Consequently, the predicted photon-magnon coupling is sensitive to the applied magnetic field and thus can be used in magnetically tuneable metamaterials based on simultaneously negative permittivity and permeability achievable thanks to the YIG layer. We also suggest that the predicted photon-magnon coupling may find applications in microwave quantum information systems.

  7. SXPS study of model GaAs(100)/electrolyte interface

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Mikhail V. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation); Mankel, Eric; Mayer, Thomas; Jaegermann, Wolfram [Institute of Material Sciences, Darmstadt University of Technology, Darmstadt (Germany)

    2010-02-15

    Model GaAs(100)/electrolyte interfaces are prepared in vacuum by co-adsorption of Cl{sub 2} and 2-propanol molecules at LN{sub 2} temperature. On adsorption of Cl{sub 2} molecules gallium chlorides, elemental arsenic and arsenic chlorides are formed. Co-adsorption of 2-propanol causes formation of additional GaCl{sub 3} and AsCl, as well as soluble/volatile As-based complexes, which are released from the surface depleting the sur- face by arsenic. Comparison of the As 3d and Ga 3d spectra obtained after heating the model interface to room temperature with the corresponding spectra obtained after emersion of the GaAs(100) surface from HCl/2-propanol solution allows to conclude that in HCl solution Cl{sup -} ions attack gallium sites and H{sup +} ions mostly attack arsenic sites. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Improved dielectric functions in metallic films obtained via template stripping

    Science.gov (United States)

    Hyuk Park, Jong; Nagpal, Prashant; Oh, Sang-Hyun; Norris, David J.

    2012-02-01

    We compare the dielectric functions of silver interfaces obtained via thermal evaporation with those obtained with template stripping. Ellipsometry measurements show that the smoother template-stripped surfaces exhibit effective dielectric functions with a more negative real component and a smaller imaginary component, implying higher conductivity and less energy loss, respectively. These results agree with the relation between dielectric function and surface roughness derived from combining the effective-medium model and the Drude-Lorentz model. The improvement in the effective dielectric properties shows that metallic films prepared via template stripping can be favorable for applications in electronics, nanophotonics, and plasmonics.

  9. Surface waves on metal-dielectric metamaterials

    DEFF Research Database (Denmark)

    Takayama, Osamu; Shkondin, Evgeniy; Panah, Mohammad Esmail Aryaee

    2016-01-01

    In this paper we analyze surface electromagnetic waves supported at an interface between an isotropic medium and an effective anisotropic material that can be realized by alternating conductive and dielectric layers with deep subwavelength thicknesses. This configuration can host various types...

  10. Effect of Compatibilization on Interfacial Polarization and Intrinsic Length Scales in Biphasic Polymer Blends of PαMSAN and PMMA : A Combined Experimental and Modeling Dielectric Study

    NARCIS (Netherlands)

    Bharati, A.; Wübbenhorst, M.; Moldenaers, Paula; Cardinaels, Ruth

    2016-01-01

    We describe an approach to tailor the dielectric interfacial properties of polymer blends by the interplay of compatibilizer effects on blend morphology and on blocking of charge carriers. A systematic study of the effect of the concentration of the compatibilizer, a random copolymer of

  11. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Lawrence Berkeley Lab., CA

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study

  12. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  13. Nanostructure multilayer dielectric materials for capacitors and insulators

    Science.gov (United States)

    Barbee, Jr., Troy W.; Johnson, Gary W.

    1998-04-21

    A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

  14. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  15. Microstructural studies on degradation of interface between LSM–YSZ cathode and YSZ electrolyte in SOFCs

    DEFF Research Database (Denmark)

    Liu, Yi-Lin; Hagen, Anke; Barfod, Rasmus

    2009-01-01

    The changes in the cathode/electrolyte interface microstructure have been studied on anode-supported technological solid oxide fuel cells (SOFCs) that were subjected to long-term (1500 h) testing at 750 °C under high electrical loading (a current density of 0.75 A/cm2). These cells exhibit...... different cathode degradation rates depending on, among others, the composition of the cathode gas, being significantly smaller in oxygen than in air. FE-SEM and high resolution analytical TEM were applied for characterization of the interface on a submicron- and nano-scale. The interface degradation has...... to decrease further due to the more pronounced formation of insulating zirconate phases that are present locally and preferably in LSM/YSZ electrolyte contact areas. The effects of the cathode gas on the interface degradation are discussed considering the change of oxygen activity at the interface, possible...

  16. Inertial polarization of dielectrics

    OpenAIRE

    Zavodovsky, A. G.

    2011-01-01

    It was proved that accelerated motion of a linear dielectric causes its polarization. Accelerated translational motion of a dielectric's plate leads to the positive charge of the surface facing the direction of motion. Metal plates of a capacitor were used to register polarized charges on a dielectric's surface. Potential difference between the capacitor plates is proportional to acceleration, when acceleration is constant potential difference grows with the increase of a dielectric's area, o...

  17. Study of structural, electrical, and dielectric properties of phosphate-borate glasses and glass-ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Melo, B. M. G.; Graça, M. P. F., E-mail: mpfg@ua.pt; Prezas, P. R.; Valente, M. A. [Physics Department (I3N), Aveiro University, Campus Universitário de Santiago, Aveiro (Portugal); Almeida, A. F.; Freire, F. N. A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Bih, L. [Equipe Physico-Chimie la Matière Condensée, Faculté des Sciences de Meknès, Meknès (Morocco)

    2016-08-07

    In this work, phosphate-borate based glasses with molar composition 20.7P{sub 2}O{sub 5}–17.2Nb{sub 2}O{sub 5}–13.8WO{sub 3}–34.5A{sub 2}O–13.8B{sub 2}O{sub 3}, where A = Li, Na, and K, were prepared by the melt quenching technique. The as-prepared glasses were heat-treated in air at 800 °C for 4 h, which led to the formation of glass-ceramics. These high chemical and thermal stability glasses are good candidates for several applications such as fast ionic conductors, semiconductors, photonic materials, electrolytes, hermetic seals, rare-earth ion host solid lasers, and biomedical materials. The present work endorses the analysis of the electrical conductivity of the as-grown samples, and also the electrical, dielectric, and structural changes established by the heat-treatment process. The structure of the samples was analyzed using X-Ray powder Diffraction (XRD), Raman spectroscopy, and density measurements. Both XRD and Raman analysis confirmed crystals formation through the heat-treatment process. The electrical ac and dc conductivities, σ{sub ac} and σ{sub dc}, respectively, and impedance spectroscopy measurements as function of the temperature, varying from 200 to 380 K, were investigated for the as-grown and heat-treated samples. The impedance spectroscopy was measured in the frequency range of 100 Hz–1 MHz.

  18. Optimal Super Dielectric Material

    Science.gov (United States)

    2015-09-01

    plate capacitor will reduce the net field to an unprecedented extent. This family of materials can form materials with dielectric values orders of... Capacitor -Increase Area (A)............8 b. Multi-layer Ceramic Capacitor -Decrease Thickness (d) .......10 c. Super Dielectric Material-Increase...circuit modeling, from [44], and B) SDM capacitor charge and discharge ...................................................22 Figure 15. Dielectric

  19. Structural, dielectric and ferroelectric properties of (Bi,Na)TiO{sub 3}–BaTiO{sub 3} system studied by high throughput screening

    Energy Technology Data Exchange (ETDEWEB)

    Hayden, Brian E. [Ilika Technologies Plc., Kenneth Dibben House, Enterprise Road, University of Southampton Science Park, Chilworth, Southampton SO16 7NS (United Kingdom); Department of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Yakovlev, Sergey, E-mail: sergey.yakovlev@ilika.com [Ilika Technologies Plc., Kenneth Dibben House, Enterprise Road, University of Southampton Science Park, Chilworth, Southampton SO16 7NS (United Kingdom)

    2016-03-31

    Thin-film materials libraries of the Bi{sub 2}O{sub 3}–Na{sub 2}O–TiO{sub 2}–BaO system in a broad composition range have been deposited in ultra-high vacuum from elemental evaporation sources and an oxygen plasma source. A high throughput approach was used for systematic compositional and structural characterization and the screening of the dielectric and ferroelectric properties. The perovskite (Bi,Na)TiO{sub 3}–BaTiO{sub 3} phase with a Ba concentration near the morphotropic phase boundary (ca. 6 at.%) exhibited a relative dielectric permittivity of 180, a loss tangent of 0.04 and remnant polarization of 19 μC/cm{sup 2}. Compared to published data, observed remnant polarization is close to that known for epitaxially grown films but higher than the values reported for polycrystalline films. The high throughput methodology and systematic nature of the study allowed us to establish the composition boundaries of the phase with optimal dielectric and ferroelectric characteristics. - Highlights: • Bi{sub 2}O{sub 3}–Na{sub 2}O–TiO{sub 2}–BaO high throughput materials library was deposited using PVD method. • Materials were processed from individual molecular beam epitaxy sources of elements. • High throughput approach was used for structural, dielectric and ferroelectric study. • Composition boundaries of perovskite compounds with optimum properties are reported.

  20. Structural, dielectric and ferroelectric properties of (Bi,Na)TiO3–BaTiO3 system studied by high throughput screening

    International Nuclear Information System (INIS)

    Hayden, Brian E.; Yakovlev, Sergey

    2016-01-01

    Thin-film materials libraries of the Bi 2 O 3 –Na 2 O–TiO 2 –BaO system in a broad composition range have been deposited in ultra-high vacuum from elemental evaporation sources and an oxygen plasma source. A high throughput approach was used for systematic compositional and structural characterization and the screening of the dielectric and ferroelectric properties. The perovskite (Bi,Na)TiO 3 –BaTiO 3 phase with a Ba concentration near the morphotropic phase boundary (ca. 6 at.%) exhibited a relative dielectric permittivity of 180, a loss tangent of 0.04 and remnant polarization of 19 μC/cm 2 . Compared to published data, observed remnant polarization is close to that known for epitaxially grown films but higher than the values reported for polycrystalline films. The high throughput methodology and systematic nature of the study allowed us to establish the composition boundaries of the phase with optimal dielectric and ferroelectric characteristics. - Highlights: • Bi 2 O 3 –Na 2 O–TiO 2 –BaO high throughput materials library was deposited using PVD method. • Materials were processed from individual molecular beam epitaxy sources of elements. • High throughput approach was used for structural, dielectric and ferroelectric study. • Composition boundaries of perovskite compounds with optimum properties are reported.

  1. Structural, dielectric and magnetic studies of magnetoelectric trirutile Fe{sub 2}TeO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, S. D., E-mail: sdkaushik@csr.res.in [UGC-DAE-Consortium for Scientific Research Mumbai Centre, R-5 Shed, BARC, Mumbai-400085 (India); Sahu, B.; Mohapatra, S. R.; Singh, A. K. [Department of Physics and Astronomy, National Institute of Technology, Rourkela-769008, Odisha (India)

    2016-05-23

    We have investigated structural, magnetic and dielectric properties of Fe{sub 2}TeO{sub 6} which is a magnetoelectric antiferromagnet with the trirutile lattice. Rietveld analysis of room temperature X-ray diffraction data shows the phase purity of the sample with tetragonal trirutile structure (space group P4{sub 2}/mnm). The DC susceptibility measurement performed on polycrystalline powders exhibits antiferromagnetic ordering below transition temperature ~ 210K. The employment of Curie-Weiss law to inverse magnetic susceptibility only in the temperature range 350-260 K indicates the magnetic ordering starts developing before the transition temperature. The temperature dependent dielectric measurements show an intrinsic behavior of dielectric constant below 150 K while a continuous increase in dielectric constant with temperature above 150 K may be attributed to a small increase in electrical conduction, known commonly in the literatures.

  2. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    International Nuclear Information System (INIS)

    Angermann, Heike

    2014-01-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D it (E), and density D it,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on

  3. Aging of Dielectric Properties below Tg

    DEFF Research Database (Denmark)

    Olsen, Niels Boye; Dyre, Jeppe; Christensen, Tage Emil

    The dielectric loss at 1Hz in TPP is studied during a temperature step from one equilibrium state to another. In the applied cryostate the temperature can be equilibrated on a timescale of 1 second. The aging time dependence of the dielectric loss is studied below Tg applying temperature steps...

  4. Ultrasonic and dielectric studies of polymer PDMS composites with ZnO and onion-like carbons nanoinclusions

    OpenAIRE

    Samulionis, Vytautas; Macutkevič, Jan; Banys, Jūras; Shenderova, Olga

    2015-01-01

    The ultrasonic and dielectric temperature investigations were performed in polydi-methylsiloxane (PDMS) with zinc oxide (ZnO) and onion-like carbon (OLC) nanocomposites. In the glass transition region, the ultrasonic velocity dispersion and large ultrasonic attenuation maxima were observed. The positions of ultrasonic attenuation peaks were slightly shifted to higher temperatures after doping PDMS with OLC and ZnO nanoparticles. The ultrasonic relaxation was compared to that of dielectric and...

  5. Dielectric Study of the Phase Transitions in [P(CH3)4]2CuY4 (Y = Cl, Br)

    Science.gov (United States)

    Gesi, Kazuo

    2002-05-01

    Phase transitions in [P(CH3)4]2CuY4 (Y = Cl, Br) have been studied by dielectric measurements. In [P(CH3)4]2CuCl4, a slight break and a discontinuous jump on the dielectric constant vs. temperature curve are seen at the normal-incommensurate and the incommensurate-commensurate phase transitions, respectively. A small peak of dielectric constant along the b-direction exists just above the incommensurate-to-commensurate transition temperature. The anisotropic dielectric anomalies of [P(CH3)4]2CuBr4 at phase transitions were measured along the three crystallographic axes. The pressure-temperature phase diagram of [P(CH3)4]2CuCl4 was determined. The initial pressure coefficients of the normal-to-incommensurate and the incommensurate-to-commensurate transition temperatures are 0.19 K/MPa and 0.27 K/MPa, respectively. The incommensurate phase in [P(CH3)4]2CuCl4 disappears at a triple point which exists at 335 MPa and 443 K. The stability and the pressure effects of the incommensurate phases are much different among the four [Z(CH3)4]2CuY4 crystals (Z = N, P; Y = Cl, Br).

  6. Wave analysis at frictional interface: A case wise study

    Science.gov (United States)

    Srivastava, Akanksha; Chattopadhyay, Amares; Singh, Pooja; Singh, Abhishek Kumar

    2018-03-01

    The present article deals with the propagation of a Stoneley wave and with the reflection as well as refraction of an incident P -wave at the frictional bonded interface between an initially stressed isotropic viscoelastic semi-infinite superstratum and an initially stressed isotropic substratum as case I and case II, respectively. The complex form of the velocity equation has been derived in closed form for the propagation of a Stoneley wave in the said structure. The real and imaginary parts of the complex form of the velocity equation correspond to the phase velocity and damped velocity of the Stoneley wave. Phase and damped velocity have been analysed against the angular frequency. The expressions of the amplitude ratios of the reflected and refracted waves are deduced analytically. The variation of the amplitude ratios is examined against the angle of incidence of the P -wave. The influence of frictional boundary parameters, initial stress, viscoelastic parameters on the phase and damped velocities of the Stoneley wave and the amplitude ratios of the reflected as well as refracted P - and SV -wave have been revealed graphically through numerical results.

  7. Elemental and structural studies at the bone-cartilage interface

    Energy Technology Data Exchange (ETDEWEB)

    Kaabar, W., E-mail: w.kaabar@surrey.ac.uk [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Daar, E. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Bunk, O. [Swiss Light Source, Paul Scherrer Institute, 5232 Villigen (Switzerland); Farquharson, M.J. [Department of Medical Physics and Applied Radiation Sciences, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4K1 (Canada); Laklouk, A. [Al-Fateh University, Tripoli (Libya); Bailey, M.; Jeynes, C. [Surrey Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gundogdu, O. [Umuttepe Campus, University of Kocaeli, 41380 Kocaeli (Turkey); Bradley, D.A. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2011-10-01

    Micro-Proton Induced X-ray Emission ({mu}-PIXE) and Proton Induced Gamma-ray Emission (PIGE) techniques were employed in the investigation of trace and essential elements distribution in normal and diseased human femoral head sections affected by osteoarthritis (OA). PIGE was exploited in the determination of elements of low atomic number z<15 such as Na and F whereas elements with z>15 viz Ca, Z, P and S were determined by PIXE. Accumulations of key elements in the bone and cartilage sections were observed, significant S and Na concentrations being found in the cartilage region particularly in normal tissues. Zn showed enhanced concentrations at the bone-cartilage interface. At a synchrotron facility, small angle X-ray scattering (SAXS) was utilized on a decalcified human femoral head section affected by OA, direct measurements being made of spatial alterations of collagen fibres. The SAXS results showed a slight decrease in the axial periodicity between normal collagen type I and that in diseased tissue in various sites, in contrast with the findings of others.

  8. Elemental and structural studies at the bone-cartilage interface

    International Nuclear Information System (INIS)

    Kaabar, W.; Daar, E.; Bunk, O.; Farquharson, M.J.; Laklouk, A.; Bailey, M.; Jeynes, C.; Gundogdu, O.; Bradley, D.A.

    2011-01-01

    Micro-Proton Induced X-ray Emission (μ-PIXE) and Proton Induced Gamma-ray Emission (PIGE) techniques were employed in the investigation of trace and essential elements distribution in normal and diseased human femoral head sections affected by osteoarthritis (OA). PIGE was exploited in the determination of elements of low atomic number z 15 viz Ca, Z, P and S were determined by PIXE. Accumulations of key elements in the bone and cartilage sections were observed, significant S and Na concentrations being found in the cartilage region particularly in normal tissues. Zn showed enhanced concentrations at the bone-cartilage interface. At a synchrotron facility, small angle X-ray scattering (SAXS) was utilized on a decalcified human femoral head section affected by OA, direct measurements being made of spatial alterations of collagen fibres. The SAXS results showed a slight decrease in the axial periodicity between normal collagen type I and that in diseased tissue in various sites, in contrast with the findings of others.

  9. Study on the microstructure and dielectric properties of X9R ceramics based on BaTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Gao Shunqi, E-mail: shunqigao@163.com [Institute of Electronics and Information Engineering, Tianjin University, Weijin Road, Tianjin 300072 (China); Wu Shunhua; Zhang Yonggang; Yang Hongxing; Wang Xinru [Institute of Electronics and Information Engineering, Tianjin University, Weijin Road, Tianjin 300072 (China)

    2011-01-15

    This paper investigated the microstructure and dielectric properties of BaTiO{sub 3}-Pb(Sn, Ti)O{sub 3} system ceramics. The Curie point of BaTiO{sub 3} is 130 deg. C. When the temperature is higher than 130 deg. C, the dielectric constant of BaTiO{sub 3} drops severely according to Curie-Weiss law. Pb(Ti, Sn)O{sub 3}(PTS) was selected to compensate the dielectric constant doping of BaTiO{sub 3} since it has high Curie temperature (Tc) point that is about 296 deg. C. The Curie temperature (Tc) point of BaTiO{sub 3} was broadened and shifted to higher temperature because of the doping of PTS, so the temperature coefficient of capacitance (TCC) curves of the ceramics based on BaTiO{sub 3} was flattened. When 2 wt% Pb(Ti{sub 0.55}Sn{sub 0.45})O{sub 3} was added, the sample showed super dielectric properties that the dielectric constant was >1750 at 25 deg. C, dielectric loss was lower than 2.0% and TCC was <{+-}10% from -55 deg. C to 200 deg. C. Therefore the materials satisfied EIA X9R specifications.

  10. Study of SrBi4Ti4O15 (SBTi) dielectric properties of doped PbO

    International Nuclear Information System (INIS)

    Rodrigues Junior, C.A.; Silva Filho, J.M.; Freitas, D.B.; Oliveira, R.G.M.; Sombra, B.; Sales, J.C.

    2012-01-01

    The ceramic SrBi 4 Ti 4 O 15 (SBTI), cation-deficient perovskite A 5 B 4 O 15 , was prepared by the method of solid state reaction and then doped with PbO (in the range 2-10% by weight). The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy at room temperature. The X-ray analysis was performed by the Rietveld refinement. The micrographs of the samples show globular-shaped grains (doped PbO). The dielectric properties: dielectric constant (Κ' or έ) and dielectric loss tangent (tan δ), were measured at room temperature in the frequency range 100 Hz - 1 MHz dielectric properties of these 1 MHz sample doped with 10 % PbO showed the dielectric constant Κ'= 168.34 and dielectric loss tangent tanδ, = 7,1.10 -2 . These results show a good possibility of miniaturization of electronic devices such as capacitors. (author)

  11. Humans, Intelligent Technology, and Their Interface: A Study of Brown’s Point

    Science.gov (United States)

    2017-12-01

    INTELLIGENT TECHNOLOGY , AND THEIR INTERFACE: A STUDY OF BROWN’S POINT by Jackie L. J. White December 2017 Thesis Advisor: Carolyn Halladay...REPORT TYPE AND DATES COVERED Master’s thesis 4. TITLE AND SUBTITLE HUMANS, INTELLIGENT TECHNOLOGY , AND THEIR INTERFACE: A STUDY OF BROWN’S POINT...with the technology before and during the accident. I combined the findings from the accident investigation with various heuristics regarding the human

  12. Revisiting the description of Protein-Protein interfaces. Part II: Experimental study

    OpenAIRE

    Cazals , Frédéric; Proust , Flavien

    2006-01-01

    This paper provides a detailed experimental study of an interface model developed in the companion article F. Cazals and F. Proust, Revisiting the description of Protein-Protein interfaces. Part I: algorithms. Our experimental study is concerned with the usual database of protein-protein complexes, split into five families (Proteases, Immune system, Enzyme Complexes, Signal transduction, Misc.) Our findings, which bear some contradictions with usual statements are the following: (i)Connectivi...

  13. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  14. Nonlinear Dielectric Response of Water Treed XLPE Cable Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Hvidsten, Sverre

    1999-07-01

    Condition assessment of XLPE power cables is becoming increasingly important for the utilities, due to a large number of old cables in service with high probability of failure caused by water tree degradation. The commercial available techniques are generally based upon measurements of the dielectric response, either by time (polarisation/depolarisation current or return voltage) or frequency domain measurements. Recently it has been found that a high number of water trees in XLPE insulated cables causes the dielectric response to increase more than linearly with increasing test voltage. This nonlinear feature of water tree degraded XLPE insulation has been suggested to be of a great importance, both for diagnostic purposes, and for fundamental understanding of the water tree phenomenon itself. The main purpose of this thesis have been to study the nonlinear feature of the dielectric response measured on watertreed XLPE insulation. This has been performed by dielectric response measurements in both time and frequency domain, numerical calculations of losses of simplified water tree models, and fmally water content and water permeation measurements on single water trees. The dielectric response measurements were performed on service aged cable samples and laboratory aged Rogowski type objects. The main reason for performing laboratory ageing was to facilitate diagnostic testing as a function of ageing time of samples containing mainly vented water trees. A new method, based upon inserting NaC1 particles at the interface between the upper semiconductive screen and the insulation, was found to successfully enhance initiation and growth of vented water trees. AC breakdown strength testing show that it is the vented water trees that reduce the breakdown level of both the laboratory aged test objects and service aged cable samples. Vented water treeing was found to cause the dielectric response to become nonlinear at a relatively low voltage level. However, the measured

  15. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  16. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  17. A study of usability principles and interface design for mobile e-books.

    Science.gov (United States)

    Wang, Chao-Ming; Huang, Ching-Hua

    2015-01-01

    This study examined usability principles and interface designs in order to understand the relationship between the intentions of mobile e-book interface designs and users' perceptions. First, this study summarised 4 usability principles and 16 interface attributes, in order to conduct usability testing and questionnaire survey by referring to Nielsen (1993), Norman (2002), and Yeh (2010), who proposed the usability principles. Second, this study used the interviews to explore the perceptions and behaviours of user operations through senior users of multi-touch prototype devices. The results of this study are as follows: (1) users' behaviour of operating an interactive interface is related to user prior experience; (2) users' rating of the visibility principle is related to users' subjective perception but not related to user prior experience; however, users' ratings of the ease, efficiency, and enjoyment principles are related to user prior experience; (3) the interview survey reveals that the key attributes affecting users' behaviour of operating an interface include aesthetics, achievement, and friendliness. This study conducts experiments to explore the effects of users’ prior multi-touch experience on users’ behaviour of operating a mobile e-book interface and users’ rating of usability principles. Both qualitative and quantitative data analyses were performed. By applying protocol analysis, key attributes affecting users’ behaviour of operation were determined.

  18. Disclosed dielectric and electromechanical properties of hydrogenated nitrile–butadiene dielectric elastomer

    International Nuclear Information System (INIS)

    Yang, Dan; Tian, Ming; Dong, Yingchao; Liu, Haoliang; Yu, Yingchun; Zhang, Liqun

    2012-01-01

    This paper presents a comprehensive study of the effects of acrylonitrile content, crosslink density and plasticization on the dielectric and electromechanical performances of hydrogenated nitrile–butadiene dielectric elastomer. It was found that by increasing the acrylonitrile content of hydrogenated nitrile–butadiene dielectric elastomer, the dielectric constant will be improved accompanied with a sharp decrease of electrical breakdown strength leading to a small actuated strain. At a fixed electric field, a high crosslink density increased the elastic modulus of dielectric elastomer, but it also enhanced the electrical breakdown strength leading to a high actuated strain. Adding a plasticizer into the dielectric elastomer decreased the dielectric constant and electrical breakdown strength slightly, but reduced the elastic modulus sharply, which was beneficial for obtaining a large strain at low electric field from the dielectric elastomer. The largest actuated strain of 22% at an electric field of 30 kV mm −1 without any prestrain was obtained. Moreover, the hydrogenated nitrile–butadiene dielectric actuator showed good history dependence. This proposed material has great potential to be an excellent dielectric elastomer. (paper)

  19. Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces

    International Nuclear Information System (INIS)

    Tanaka, Shingo; Kohyama, Masanori

    2003-01-01

    Ab initio pseudopotential calculation of 3C-SiC(1 1 1)/Al nano-hetero interfaces have been performed and interface atom species dependence (IASD) and interface orientation dependence (IOD) of nano-hetero interfaces between 3C-SiC ((1 1 1) or (0 0 1) orientation) and metal (Ti or Al) have been studied systematically. Stable atomic configurations of the 3C-SiC(1 1 1)/Al interfaces are quite different from those of the 3C-SiC(1 1 1)/Ti interfaces. Two terminated, Si-terminated (Si-TERM) and C-terminated (C-TERM), 3C-SiC(1 1 1)/Al interfaces have covalent bonding nature. In 3C-SiC/M (M = Ti or Al) nano-hetero interfaces, the C-terminated interface has relative strong, covalent and ionic C-Ti or C-Al bonds as TiC or SiC while the Si-terminated interface has various type of bonding nature, relative weak Si-Ti or Si-Al bonds from metallic character at the (0 0 1) interface to covalent character at the (1 1 1) interface. Adhesive energy (AE) shows strong IASD and IOD. The AE of the C-terminated interface is larger than that of the Si-terminated one. In the C-terminated interface, the AE of the (1 1 1) interface is smaller than that of the (0 0 1) one while in the Si-terminated interface there exists opposite interrelation. Schottky barrier height (SBH) also shows strong IASD and IOD. The SBH of the C-terminated interface is smaller than that of the Si-terminated one. The C-terminated SiC/Al interfaces have extremely small SBHs. In comparison with some experimental SBH, the present result is reliable as the difference of SBH between the two terminated interfaces and qualitative properties

  20. Molecular dynamics studies of fluid/oil interfaces for improved oil recovery processes.

    Science.gov (United States)

    de Lara, Lucas S; Michelon, Mateus F; Miranda, Caetano R

    2012-12-20

    In our paper, we study the interface wettability, diffusivity, and molecular orientation between crude oil and different fluids for applications in improved oil recovery (IOR) processes through atomistic molecular dynamics (MD). The salt concentration, temperature, and pressure effects on the physical chemistry properties of different interfaces between IOR agents [brine (H(2)O + % NaCl), CO(2), N(2), and CH(4)] and crude oil have been determined. From the interfacial density profiles, an accumulation of aromatic molecules near the interface has been observed. In the case of brine interfaced with crude oil, our calculations indicate an increase in the interfacial tension with increasing pressure and salt concentration, which favors oil displacement. On the other hand, with the other fluids studied (CO(2), N(2), and CH(4)), the interfacial tension decreases with increasing pressure and temperature. With interfacial tension reduction, an increase in fluid diffusivity in the oil phase is observed. We also studied the molecular orientation properties of the hydrocarbon and fluids molecules in the interface region. We perceived that the molecular orientation could be affected by changes in the interfacial tension and diffusivity of the molecules in the interface region with the increased pressure and temperature: pressure (increasing) → interfacial tension (decreasing) → diffusion (increasing) → molecular ordering. From a molecular point of view, the combination of low interfacial tension and high diffusion of molecules in the oil phase gives the CO(2) molecules unique properties as an IOR fluid compared with other fluids studied here.

  1. Nanocomposite dielectrics-properties and implications

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, J K; Hu, Y [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)

    2005-01-21

    The incorporation of nanoparticles into thermosetting resins is seen to impart desirable dielectric properties when compared with conventional (micron-sized particulates) composites. Although the improvements are accompanied by the mitigation of internal charge in the materials, the nature of the interfacial region is shown to be pivotal in determining the dielectric behaviour. In particular, it is shown that the conditions and enhanced area of the interface changes the bonding that may give rise to an interaction zone, which affects the interfacial polarization through the formation of local conductivity.

  2. High voltage/high resolution studies of metal and semiconductor interfaces

    International Nuclear Information System (INIS)

    Westmacott, K.H.; Dahmen, U.

    1989-11-01

    The application of high resolution transmission electron microscopy to the study of homo- or hetero-phase interface structures requires specimens that meet stringent criteria. In some systems the necessary geometric imaging conditions are established naturally, thus greatly simplifying the analysis. This is illustrated for a diamond-hexagonal/diamond-cubic interface in deformed silicon, a Σ99 tilt boundary in a pure aluminum bicrystal, and a germanium precipitate in an aluminum matrix. 13 refs., 5 figs

  3. Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric

    Directory of Open Access Journals (Sweden)

    Wei Huang

    2013-05-01

    Full Text Available Hysteresis mechanism of pentacene organic field-effect transistors (OFETs with polyvinyl alcohol (PVA and/or polymethyl methacrylate (PMMA dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ∼ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics.

  4. Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

    Science.gov (United States)

    Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

    2018-01-22

    A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

  5. Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications

    KAUST Repository

    Alshareef, Husam N.

    2011-01-03

    Nanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.

  6. Structural, Raman, and dielectric studies on multiferroic Mn-doped Bi 1-xLax FeO 3 ceramics

    KAUST Repository

    Xing, Zhibiao

    2014-04-03

    Multiferroic Bi1-xLaxFeO3 [BLFO (x)] ceramics with x = 0.10-0.50 and Mn-doped BLFO (x = 0.30) ceramics with different doping contents (0.1-1.0 mol%) were prepared by solid-state reaction method. They were crystallized in a perovskite phase with rhombohedral symmetry. In the BLFO (x) system, a composition (x)-driven structural transformation (R3c→C222) was observed at x = 0.30. The formation of Bi2Fe 4O9 impure phase was effectively suppressed with increasing the x value, and the rhombohedral distortion in the BLFO ceramics was decreased, leading to some Raman active modes disappeared. A significant red frequency shift (~13 cm-1) of the Raman mode of 232 cm-1 in the BLFO ceramics was observed, which strongly perceived a significant destabilization in the octahedral oxygen chains, and in turn affected the local FeO6 octahedral environment. In the Mn-doped BLFO (x = 0.30) ceramics, the intensity of the Raman mode near 628 cm-1 was increased with increasing the Mn-doping content, which was resulted from an enhanced local Jahn-Teller distortions of the (Mn,Fe)O6 octahedra. Electron microscopy images revealed some changes in the ceramic grain sizes and their morphologies in the Mn-doped samples at different contents. Wedge-shaped 71° ferroelectric domains with domain walls lying on the {110} planes were observed in the BLFO (x = 0.30) ceramics, whereas in the 1.0 mol% Mn-doped BLFO (x = 0.30) samples, 71° ferroelectric domains exhibited a parallel band-shaped morphology with average domain width of 95 nm. Dielectric studies revealed that high dielectric loss of the BLFO (x = 0.30) ceramics was drastically reduced from 0.8 to 0.01 (measured @ 104 Hz) via 1.0 mol% Mn-doping. The underlying mechanisms can be understood by a charge disproportion between the Mn4+ and Fe2+ in the Mn-doped samples, where a reaction of Mn4+ + Fe2+→Mn3+ + Fe3+ is taken place, resulting in the reduction in the oxygen vacancies and a suppression of the electron hopping from Fe3+ to Fe2+ ions

  7. Structural, Raman, and dielectric studies on multiferroic Mn-doped Bi 1-xLax FeO 3 ceramics

    KAUST Repository

    Xing, Zhibiao; Zhu, Xinhua; Zhu, Jianmin; Liu, Zhiguo; Al-Kassab, Talaat

    2014-01-01

    Multiferroic Bi1-xLaxFeO3 [BLFO (x)] ceramics with x = 0.10-0.50 and Mn-doped BLFO (x = 0.30) ceramics with different doping contents (0.1-1.0 mol%) were prepared by solid-state reaction method. They were crystallized in a perovskite phase with rhombohedral symmetry. In the BLFO (x) system, a composition (x)-driven structural transformation (R3c→C222) was observed at x = 0.30. The formation of Bi2Fe 4O9 impure phase was effectively suppressed with increasing the x value, and the rhombohedral distortion in the BLFO ceramics was decreased, leading to some Raman active modes disappeared. A significant red frequency shift (~13 cm-1) of the Raman mode of 232 cm-1 in the BLFO ceramics was observed, which strongly perceived a significant destabilization in the octahedral oxygen chains, and in turn affected the local FeO6 octahedral environment. In the Mn-doped BLFO (x = 0.30) ceramics, the intensity of the Raman mode near 628 cm-1 was increased with increasing the Mn-doping content, which was resulted from an enhanced local Jahn-Teller distortions of the (Mn,Fe)O6 octahedra. Electron microscopy images revealed some changes in the ceramic grain sizes and their morphologies in the Mn-doped samples at different contents. Wedge-shaped 71° ferroelectric domains with domain walls lying on the {110} planes were observed in the BLFO (x = 0.30) ceramics, whereas in the 1.0 mol% Mn-doped BLFO (x = 0.30) samples, 71° ferroelectric domains exhibited a parallel band-shaped morphology with average domain width of 95 nm. Dielectric studies revealed that high dielectric loss of the BLFO (x = 0.30) ceramics was drastically reduced from 0.8 to 0.01 (measured @ 104 Hz) via 1.0 mol% Mn-doping. The underlying mechanisms can be understood by a charge disproportion between the Mn4+ and Fe2+ in the Mn-doped samples, where a reaction of Mn4+ + Fe2+→Mn3+ + Fe3+ is taken place, resulting in the reduction in the oxygen vacancies and a suppression of the electron hopping from Fe3+ to Fe2+ ions

  8. Studies on frequency dependent electrical and dielectric properties of sintered zinc oxide pellets: effects of Al-doping

    Science.gov (United States)

    Tewari, S.; Ghosh, A.; Bhattacharjee, A.

    2016-11-01

    Sintered pellets of zinc oxide (ZnO), both undoped and Al-doped are prepared through a chemical process. Dopant concentration of Aluminium in ZnO [Al/Zn in weight percentage (wt%)] is varied from 0 to 3 wt%. After synthesis structural characterisation of the samples are performed with XRD and SEM-EDAX which confirm that all the samples are of ZnO having polycrystalline nature with particle size from 108.6 to 116 nm. Frequency dependent properties like a.c. conductivity, capacitance, impedance and phase angle are measured in the frequency range 10 Hz to 100 kHz as a function of temperature (in the range 25-150 °C). Nature of a.c. conductivity in these samples indicates hopping type of conduction arising from localised defect states. The frequency and temperature dependent properties under study are found to be as per correlated barrier hoping model. Dielectric and impedance properties studied in the samples indicate distributed relaxation, showing decrease of relaxation time with temperature.

  9. Numerical study on the discharge characteristics and nonlinear behaviors of atmospheric pressure coaxial electrode dielectric barrier discharges

    International Nuclear Information System (INIS)

    Zhang Ding-Zong; Wang Yan-Hui; Wang De-Zhen

    2017-01-01

    The discharge characteristics and temporal nonlinear behaviors of the atmospheric pressure coaxial electrode dielectric barrier discharges are studied by using a one-dimensional fluid model. It is shown that the discharge is always asymmetrical between the positive pulses and negative pulses. The gas gap severely affects this asymmetry. But it is hard to acquire a symmetrical discharge by changing the gas gap. This asymmetry is proportional to the asymmetric extent of electrode structure, namely the ratio of the outer electrode radius to the inner electrode radius. When this ratio is close to unity, a symmetrical discharge can be obtained. With the increase of frequency, the discharge can exhibit a series of nonlinear behaviors such as period-doubling bifurcation, secondary bifurcation and chaotic phenomena. In the period-doubling bifurcation sequence the period- n discharge becomes more and more unstable with the increase of n . The period-doubling bifurcation can also be obtained by altering the discharge gas gap. The mechanisms of two bifurcations are further studied. It is found that the residual quasineutral plasma from the previous discharges and corresponding electric field distribution can weaken the subsequent discharge, and leads to the occurrence of bifurcation. (paper)

  10. Growth, optical, thermal and dielectric studies of an amino acid organic nonlinear optical material: L-Alanine

    International Nuclear Information System (INIS)

    Caroline, M. Lydia; Sankar, R.; Indirani, R.M.; Vasudevan, S.

    2009-01-01

    Good transparent bulk single crystals of L-alanine (nonlinear optical material) have been grown successfully by slow cooling technique from aqueous solution at pH value of 2.0. Optically transparent crystals with dimensions 2.4 cm x 1.2 cm x 1.6 cm, were grown by optimizing the growth parameters within a growth period of 2 weeks. The crystallinity of L-alanine crystal was confirmed by the powder X-ray diffraction study and diffraction peaks are indexed. The vibrational structure of the molecule is elucidated from FTIR spectra. The thermal behaviour of the grown crystal was investigated by thermogravimetric (TG) and differential thermal analyses (DTA) techniques in a nitrogen atmosphere. The result showed that the material starts decomposing at 297 deg. C. Its optical behaviour has been examined by UV-vis spectral analysis, which shows the absence of absorbance between the wavelengths ranging from 200 to 1200 nm. The NLO property was confirmed by the powder technique of Kurtz and Perry. The dielectric behaviour of the sample was also studied for the first time

  11. Study of the defect structures produced by heavy ions in dielectrics by means of small angle scattering

    International Nuclear Information System (INIS)

    Albrecht, D.J.

    1983-11-01

    The aim of the present thesis was to study the defects in dielectrics produced by fast ions. For this the small angle scattering was proved as suitable method. By the production by means of the ion beam of an accelerator the defects possess a pronounced preferential direction. In scattering experiments this system of scattering centers is distinguished by its unusually strong dependence of the sample orientation according to the primary beam. This property was studied, described, and illustrated by examples, and it could by shown that from this additional informations about the scattering defects can be derived. For the first time nuclear tracks were detected by means of small angle neutron scattering. It could be shown that here the same results are obtained as by small angle X-ray scattering. The measured intensity distributions could be assigned to a mathematical model description which gives form, width, and density of the tracks in the position space. On the base of this cylinder model computer codes were established which simulate the scattering experiment regarding the main influences and calculate the expected theoretical intensity distribution. The agreement between calculated and measured scattering distributions proves the validity of the model. The parameters determined by this model, maximal change of density in the track, defect length, radial dilatation, distance of the narrowings and there depth were determined. For the main quantities, radial dilatation and maximal change of densities a simple description of the energy dependence could be given via the energy loss. (orig./HSI) [de

  12. Elaboration and dielectric characterization of a doped ferroelectric ...

    African Journals Online (AJOL)

    ... 1150,1180 and 1200 °C successively to optimize the sintering temperature optimal where the density of the sample is maximum (near theoretical density) and therefore the product has better physical quality. The study of dielectric properties of all samples showed a high permittivity dielectric εr = 18018, low dielectric loss: ...

  13. Analyzing the effect of gate dielectric on the leakage currents

    Directory of Open Access Journals (Sweden)

    Sakshi

    2016-01-01

    Full Text Available An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.

  14. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike, E-mail: angermann@helmholtz-berlin.de

    2014-09-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D{sub it}(E), and density D{sub it,min} of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly

  15. Effectiveness of monopolar dielectric transmission of pulsed electromagnetic fields for multiple sclerosis-related pain: A pilot study.

    Science.gov (United States)

    Hochsprung, A; Escudero-Uribe, S; Ibáñez-Vera, A J; Izquierdo-Ayuso, G

    2018-05-08

    Pain is highly prevalent in patients with multiple sclerosis (MS); it is chronic in 50% of cases and is classified as nociceptive, neuropathic, or mixed-type. Pain affects quality of life, sleep, and the activities of daily living. Electrotherapy is an interesting alternative or complementary treatment in the management of pain in MS, with new innovations constantly appearing. This study evaluates the effectiveness of treatment with monopolar dielectric transmission of pulsed electromagnetic fields (PEMF) for pain associated with MS. We performed a randomised, placebo-controlled clinical trial including 24 patients, who were assessed with the Brief Pain Inventory, the Multiple Sclerosis International Quality of Life questionnaire, the Beck Depression Inventory, and the Modified Fatigue Impact Scale. Statistically significant improvements were observed in maximum and mean pain scores, as well as in the impact of pain on work, personal relationships, and sleep and rest. Not significant differences were found between the treatment and placebo groups. Treatment with PEMF may be effective in reducing pain in patients with MS, although further research is necessary to confirm its effectiveness over placebo and to differentiate which type of pain may be more susceptible to this treatment. Copyright © 2018 Sociedad Española de Neurología. Publicado por Elsevier España, S.L.U. All rights reserved.

  16. Near-field study with a photon scanning tunneling microscope: Comparison between dielectric nanostructure and metallic nanostructure

    International Nuclear Information System (INIS)

    Mahmoud, Mahmoud Youcef; Bassou, Ghaouti; Salomon, Laurant; Chekroun, Z.; Djamai, Nesrine

    2007-01-01

    Scanning near-field optical microscopy (SNOM) integrates standard optical methods with scanning probe microscopy (SPM) techniques allowing to collect optical information with resolution well beyond the diffraction limit. We study the influence on image formation of several parameters in scanning near-field microscopy. The numerical calculations have been carried out using the differential method. We investigate a 2D-PSTM configuration with a dielectric rectangular object. We will focus on the collection type SNOM in a constant height scanning mode. Various oscillation patterns are observed from both sides of the nanostructure, which we interpret as interference between the diffracted waves scattered by the nanostructure (with the components of the wave vector parallel to the surface) and the evanescent incident wave above the surface. Using an optical near-field analysis and by calculating the electric field intensity distribution, we investigate the probe-sample distance effect. It is found that the distribution of the intensity related to the electric field is depending on sample-probe distance. We noticed the loss of details in the image and the presence of dramatic oscillations. Also, both of the polarization state of the illuminating light effect and the angle of incidence are investigated. We conclude that a differential method provides physical insight into the main features of the different images

  17. Near-field study with a photon scanning tunneling microscope: Comparison between dielectric nanostructure and metallic nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoud, Mahmoud Youcef [Laboratoire d' elaboration et caracterisation des materiaux, Groupe de Microscopie et Microanalyse, Universite Djilali Liabes de Sidi Bel-Abbes, Faculte des sciences (Algeria)], E-mail: mahmoudhamoud@yahoo.com; Bassou, Ghaouti [Laboratoire d' elaboration et caracterisation des materiaux, Groupe de Microscopie et Microanalyse, Universite Djilali Liabes de Sidi Bel-Abbes, Faculte des sciences (Algeria); Laboratoire de Physique (LPUB), CNRS UMR 5027, Groupe d' Optique de Champ Proche, Faculte des Sciences Mirande, Universite de Bourgogne, 9 Avenue Alain Savary, BP 47 870, 21078 Dijon Cedex (France); Salomon, Laurant [Laboratoire de Physique (LPUB), CNRS UMR 5027, Groupe d' Optique de Champ Proche, Faculte des Sciences Mirande, Universite de Bourgogne, 9 Avenue Alain Savary, BP 47 870, 21078 Dijon Cedex (France); Chekroun, Z. [Laboratoire d' elaboration et caracterisation des materiaux, Groupe de Microscopie et Microanalyse, Universite Djilali Liabes de Sidi Bel-Abbes, Faculte des sciences (Algeria); Djamai, Nesrine [Laboratoire de telecommunications et de traitement numerique du signal (LTTNS), Universite Djilali Liabes de Sidi Bel-Abbes, Faculte des sciences de l' ingenieur, Departement d' electronique (Algeria)

    2007-08-25

    Scanning near-field optical microscopy (SNOM) integrates standard optical methods with scanning probe microscopy (SPM) techniques allowing to collect optical information with resolution well beyond the diffraction limit. We study the influence on image formation of several parameters in scanning near-field microscopy. The numerical calculations have been carried out using the differential method. We investigate a 2D-PSTM configuration with a dielectric rectangular object. We will focus on the collection type SNOM in a constant height scanning mode. Various oscillation patterns are observed from both sides of the nanostructure, which we interpret as interference between the diffracted waves scattered by the nanostructure (with the components of the wave vector parallel to the surface) and the evanescent incident wave above the surface. Using an optical near-field analysis and by calculating the electric field intensity distribution, we investigate the probe-sample distance effect. It is found that the distribution of the intensity related to the electric field is depending on sample-probe distance. We noticed the loss of details in the image and the presence of dramatic oscillations. Also, both of the polarization state of the illuminating light effect and the angle of incidence are investigated. We conclude that a differential method provides physical insight into the main features of the different images.

  18. Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Wunderlich, Bernhard K; Klitzing, Regine V; Bausch, Andreas R

    2007-03-27

    The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.

  19. Study on Relationship between Dielectric Constant and Water Content of Rock-Soil Mixture by Time Domain Reflectometry

    Directory of Open Access Journals (Sweden)

    Daosheng Ling

    2016-01-01

    Full Text Available It is important to test water content of rock-soil mixtures efficiently and accurately to ensure both the quality control of compaction and assessment of the geotechnical engineering properties. To overcome time and energy wastage and probe insertion problems when using the traditional calibration method, a TDR coaxial test tube calibration arrangement using an upward infiltration method was designed. This arrangement was then used to study the influence of dry density, pore fluid conductivity, and soil/rock ratio on the relationship between water content and the dielectric constant of rock-soil mixtures. The results show that the empirical calibration equation forms for rock-soil mixtures can be the same as for soil materials. The effect of dry density on the calibration equation has the most significance and the influence of pore fluid conductivity can be ignored. The impact of variation of the soil/rock ratio can be neutralized by considering the effect of dry density in the calibration equation for the same kind of soil and rock. The empirical equations proposed by Zhao et al. show a good accuracy for rock-soil mixtures, indicating that the TDR method can be used to test gravimetric water content conveniently and efficiently without calibration in the field.

  20. Dielectric properties of polymer-particle nanocomposites influenced by electronic nature of filler surfaces.

    Science.gov (United States)

    Siddabattuni, Sasidhar; Schuman, Thomas P; Dogan, Fatih

    2013-03-01

    The interface between the polymer and the particle has a critical role in altering the properties of a composite dielectric. Polymer-ceramic nanocomposites are promising dielectric materials for many electronic and power devices, combining the high dielectric constant of ceramic particles with the high dielectric breakdown strength of a polymer. Self-assembled monolayers of electron rich or electron poor organophosphate coupling groups were applied to affect the filler-polymer interface and investigate the role of this interface on composite behavior. The interface has potential to influence dielectric properties, in particular the leakage and breakdown resistance. The composite films synthesized from the modified filler particles dispersed into an epoxy polymer matrix were analyzed by dielectric spectroscopy, breakdown strength, and leakage current measurements. The data indicate that significant reduction in leakage currents and dielectric losses and improvement in dielectric breakdown strengths resulted when electropositive phenyl, electron-withdrawing functional groups were located at the polymer-particle interface. At a 30 vol % particle concentration, dielectric composite films yielded a maximum energy density of ~8 J·cm(-3) for TiO2-epoxy nanocomposites and ~9.5 J·cm(-3) for BaTiO3-epoxy nanocomposites.

  1. Study of dielectric property on ZrO2 and Al doped ZrO2 nanoparticles

    International Nuclear Information System (INIS)

    Catherine Siriya Pushpa, K.; Mangayarkarasi, K.; Ravichandran, A.T.; Xavier, A. Robert; Nagabushana, B.M.

    2014-01-01

    A solution combustion process was used to synthesize ZrO 2 and Al doped ZrO 2 nanoparticles by using Zirconium nitrate and aluminium nitrate as the oxidizer and glycine as fuel. The prepared samples were characterized by several techniques such as X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible spectroscopy (UV-vis). The dielectric values of the pelletized samples were examined at room temperature as the function of frequency. XRD shows the structure of the prepared and doped samples. The SEM shows the surface morphology of the pure and doped ZrO 2 nanoparticles. The dielectric property enhances with increase of Al concentration, which is useful in dielectric gates. (author)

  2. Optically levitating dielectrics in the quantum regime: Theory and protocols

    International Nuclear Information System (INIS)

    Romero-Isart, O.; Pflanzer, A. C.; Cirac, J. I.; Juan, M. L.; Quidant, R.; Kiesel, N.; Aspelmeyer, M.

    2011-01-01

    We provide a general quantum theory to describe the coupling of light with the motion of a dielectric object inside a high-finesse optical cavity. In particular, we derive the total Hamiltonian of the system as well as a master equation describing the state of the center-of-mass mode of the dielectric and the cavity-field mode. In addition, a quantum theory of elasticity is used to study the coupling of the center-of-mass motion with internal vibrational excitations of the dielectric. This general theory is applied to the recent proposal of using an optically levitating nanodielectric as a cavity optomechanical system [see Romero-Isart et al., New J. Phys. 12, 033015 (2010); Chang et al., Proc. Natl. Acad. Sci. USA 107, 1005 (2010)]. On this basis, we also design a light-mechanics interface to prepare non-Gaussian states of the mechanical motion, such as quantum superpositions of Fock states. Finally, we introduce a direct mechanical tomography scheme to probe these genuine quantum states by time-of- flight experiments.

  3. Dielectric spectroscopy of watermelons for quality sensing

    Science.gov (United States)

    Nelson, Stuart O.; Guo, Wen-chuan; Trabelsi, Samir; Kays, Stanley J.

    2007-07-01

    Dielectric properties of four small-sized watermelon cultivars, grown and harvested to provide a range of maturities, were measured with an open-ended coaxial-line probe and an impedance analyser over the frequency range from 10 MHz to 1.8 GHz. Probe measurements were made on the external surface of the melons and also on tissue samples from the edible internal tissue. Moisture content and soluble solids content (SSC) were measured for internal tissue samples, and SSC (sweetness) was used as the quality factor for correlation with the dielectric properties. Individual dielectric constant and loss factor correlations with SSC were low, but a high correlation was obtained between the SSC and permittivity from a complex-plane plot of dielectric constant and loss factor, each divided by SSC. However, SSC prediction from the dielectric properties by this relationship was not as high as expected (coefficient of determination about 0.4). Permittivity data (dielectric constant and loss factor) for the melons are presented graphically to show their relationships with frequency for the four melon cultivars and for external surface and internal tissue measurements. A dielectric relaxation for the external surface measurements, which may be attributable to a combination of bound water, Maxwell-Wagner, molecular cluster or ion-related effects, is also illustrated. Coefficients of determination for complex-plane plots, moisture content and SSC relationship, and penetration depth are also shown graphically. Further studies are needed for determining the practicality of sensing melon quality from their dielectric properties.

  4. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  5. Study of electrical properties of Sc doped BaFe12O19 ceramic using dielectric, impedance, modulus spectroscopy and AC conductivity

    Science.gov (United States)

    Gupta, Surbhi; Deshpande, S. K.; Sathe, V. G.; Siruguri, V.

    2018-04-01

    We present dielectric, complex impedance, modulus spectroscopy and AC conductivity studies of the compound BaFe10Sc2O19 as a function of temperature and frequency to understand the conduction mechanism. The variation in complex dielectric constant with frequency and temperature were analyzed on the basis of Maxwell-Wagner-Koop's theory and charge hopping between ferrous and ferric ions. The complex impedance spectroscopy study shows only grain contribution whereas complex modulus plot shows two semicircular arcs which indicate both grain and grain boundary contributions in conduction mechanism. AC conductivity has also been evaluated which follows the Jonscher's law. The activation energy calculated from temperature dependence of DC conductivity comes out to be Ea˜ 0.31eV.

  6. Inductive dielectric analyzer

    International Nuclear Information System (INIS)

    Agranovich, Daniel; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri; Polygalov, Eugene

    2017-01-01

    One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions. (paper)

  7. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  8. Synchrotron X-ray scattering studies at mineral-water interfaces

    International Nuclear Information System (INIS)

    Chiarello, R.P.; Sturchio, N.C.

    1995-01-01

    Synchrotron X-ray scattering techniques provide a powerful tool for the in situ study of atomic scale processes occurring at solid-liquid interfaces. We have applied these techniques to characterize and study reactions at mineral-water interfaces. Here we present two examples. The first is the characterization of the calcite (CaCO 3 ) (10 bar 14) cleavage surface, in equilibrium with deionized water, by crystal truncation rod measurements. The second is the in situ study of the heteroepitaxial growth of otavite (CdCO 3 ) on the calcite (10 bar 14) cleavage surface. The results of such studies will lead to significant progress in understanding mineral-water interface geochemistry

  9. Contribution to study of interfaces instabilities in plane, cylindrical and spherical geometry

    Science.gov (United States)

    Toque, Nathalie

    1996-12-01

    This thesis proposes several experiments of hydrodynamical instabilities which are studied, numerically and theoretically. The experiments are in plane and cylindrical geometry. Their X-ray radiographies show the evolution of an interface between two solid media crossed by a detonation wave. These materials are initially solid. They become liquide under shock wave or stay between two phases, solid and liquid. The numerical study aims at simulating with the codes EAD and Ouranos, the interfaces instabilities which appear in the experiments. The experimental radiographies and the numerical pictures are in quite good agreement. The theoretical study suggests to modelise a spatio-temporal part of the experiments to obtain the quantitative development of perturbations at the interfaces and in the flows. The models are linear and in plane, cylindrical and spherical geometry. They preceed the inoming study of transition between linear and non linear development of instabilities in multifluids flows crossed by shock waves.

  10. STABILITY OF A CYLINDRICAL SOLUTE-SOLVENT INTERFACE: EFFECT OF GEOMETRY, ELECTROSTATICS, AND HYDRODYNAMICS.

    Science.gov (United States)

    Li, B O; Sun, Hui; Zhou, Shenggao

    The solute-solvent interface that separates biological molecules from their surrounding aqueous solvent characterizes the conformation and dynamics of such molecules. In this work, we construct a solvent fluid dielectric boundary model for the solvation of charged molecules and apply it to study the stability of a model cylindrical solute-solvent interface. The motion of the solute-solvent interface is defined to be the same as that of solvent fluid at the interface. The solvent fluid is assumed to be incompressible and is described by the Stokes equation. The solute is modeled simply by the ideal-gas law. All the viscous force, hydrostatic pressure, solute-solvent van der Waals interaction, surface tension, and electrostatic force are balanced at the solute-solvent interface. We model the electrostatics by Poisson's equation in which the solute-solvent interface is treated as a dielectric boundary that separates the low-dielectric solute from the high-dielectric solvent. For a cylindrical geometry, we find multiple cylindrically shaped equilibrium interfaces that describe polymodal (e.g., dry and wet) states of hydration of an underlying molecular system. These steady-state solutions exhibit bifurcation behavior with respect to the charge density. For their linearized systems, we use the projection method to solve the fluid equation and find the dispersion relation. Our asymptotic analysis shows that, for large wavenumbers, the decay rate is proportional to wavenumber with the proportionality half of the ratio of surface tension to solvent viscosity, indicating that the solvent viscosity does affect the stability of a solute-solvent interface. Consequences of our analysis in the context of biomolecular interactions are discussed.

  11. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  12. [Study on Square Super-Lattice Pattern with Surface Discharge in Dielectric Barrier Discharge by Optical Emission Spectra].

    Science.gov (United States)

    Niu, Xue-jiao; Dong, Li-fang; Liu, Ying; Wang, Qian; Feng, Jian-yu

    2016-02-01

    Square super-lattice pattern with surface discharge consisting of central spots and dim spots is firstly observed in the mixture of argon and air by using a dielectric barrier discharge device with water electrodes. By observing the image, it is found that the central spot is located at the centriod of its surrounding four dim spots. The short-exposure image recorded by a high speed video camera shows that the dim spot results from the surface discharges (SDs). The brightness of the central spot and is quite different from that of the dim spot, which indicates that the plasma states of the central spot and the dim spot may be differentiated. The optical emission spectrum method is used to further study the several plasma parameters of the central spot and the dim spot in different argon content. The emission spectra of the N₂ second positive band (C³IIu --> B³ IIg) are measured, from which the molecule vibration temperatures of the central spot and the dim spot are calculated respectively. The broadening of spectral line 696.57 nm (2P₂-->1S₅) is used to study the electron densities of the central spot and the dim spot. It is found that the molecule vibration temperature and electron density of the dim spot are higher than those of the central spot in the same argon content The molecule vibration temperature and electron density of the central spot and the dim spot increase with the argon content increasing from 90% to 99.9%. The surface discharge induced by the volume discharge (VD) has the determinative effect on the formation of the dim spot The experimental results above play an important role in studying the formation mechanism of surface discharg&of square super-lattice pattern with surface discharge. In addition, the studies exert an influence on the application of surface discharge and volume discharge in different fields.

  13. Crystallization studies and dielectric properties of (Ba0.7Sr0.3)TiO3 in bariumaluminosilicate glass

    Science.gov (United States)

    Divya, P. V.; Vignesh, G.; Kumar, V.

    2007-12-01

    Ferroelectric glass-ceramics with a basic composition (1 - y)(Ba0.70Sr0.30)TiO3 : y(BaO : Al2O3 : 2SiO2) have been synthesized by the sol-gel method. The major crystalline phase is the perovskite. The crystallization of the ferroelectric phase in the glass matrix have been studied using differential thermal analysis and x-ray diffraction and the kinetic parameters characterizing the crystallization have been determined using an Arrhenius model. Glass contents <= 5 mol% promoted liquid phase sintering, which reduced the sintering temperature to 1250 °C. The dielectric permittivity of the glass-ceramic samples decreased and the ferroelectric-paraelectric phase transition became more diffuse with increasing glass content. The dielectric connectivity of the ferroelectric phase in the composite have also been investigated and are reported.

  14. Adaptive support for user interface customization : a study in radiology

    NARCIS (Netherlands)

    Jorritsma, Wiard; Cnossen, Fokie; van Ooijen, Peter M. A.

    Objectives: This study aimed to evaluate the usefulness of adaptive customization support in a natural work environment: the Picture Archiving and Communication System (PACS) in radiology. Methods: Adaptive support was given in the form of customization suggestions, generated based on behavioral

  15. Interfaces study of all-polysaccharide composite films

    Czech Academy of Sciences Publication Activity Database

    Šimkovic, I.; Kelnar, Ivan; Mendichi, R.; Tracz, A.; Filip, J.; Bertók, T.; Kasák, P.

    2018-01-01

    Roč. 72, č. 3 (2018), s. 711-718 ISSN 0366-6352 Institutional support: RVO:61389013 Keywords : all-polysaccharide composites * elemental analysis * film properties study Subject RIV: JI - Composite Materials OBOR OECD: Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics Impact factor: 1.258, year: 2016

  16. Study of lithium glassy solid electrolyte/electrode interface by ...

    Indian Academy of Sciences (India)

    Unknown

    Institut de Chimie de la Matière Condensée de Bordeaux – C.N.R.S. et Ecole Nationale Supérieure de Chimie et de ... chemically very stable with the different types of electrodes studied here. ... tigated to improve the battery performance.

  17. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Science.gov (United States)

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  18. Interface chemistry of CdZnTe films studied by a peel-off approach

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Jun; Xu, Haitao; Zhang, Yuelu; Ji, Huanhuan; Xu, Run, E-mail: runxu@staff.shu.edu.cn; Huang, Jian; Zhang, Jijun; Liang, Xiaoyan; Tang, Ke; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • A peel-off approach is adopted to study the interface chemistry of CdZnTe films. • A thick mixed interlayer above 84 nm is found at a low growth temperature of 200 °C. • A reaction-limited model is suggested to explain the formation of mixed interlayer. - Abstract: CdZnTe films with thickness above 50 μm were deposited at temperatures of 200–500 °C by Close Space Sublimation method. A peel-off approach has been adopted to study the interface chemistry of CdZnTe thick films. For all the CdZnTe films, the scanning electron microscopy images show the small and round-like grains formed at interface in contrast to the large ordered grains at surface. For CdZnTe films grown at a low substrate temperature of 200 °C, the interface layer between CdZnTe and substrate is mixed with Te and CdTe, as evidenced by X-ray diffraction, Raman and X-ray photoelectron spectroscopy results. The thickness of the interface layer can be estimated to be 84 nm by depth profile using X-ray photoelectron spectroscopy. In contrast, a thin interface layer less than 14 nm is found at a high substrate temperature of 500 °C. The limited reaction of Te{sub 2} and Cd (Zn) to CdZnTe at a low growth temperature is responsible for the formation of the thick interface layer and a slow deposition rate at the nucleation stage.

  19. Water liquid-vapor interface subjected to various electric fields: A molecular dynamics study

    Science.gov (United States)

    Nikzad, Mohammadreza; Azimian, Ahmad Reza; Rezaei, Majid; Nikzad, Safoora

    2017-11-01

    Investigation of the effects of E-fields on the liquid-vapor interface is essential for the study of floating water bridge and wetting phenomena. The present study employs the molecular dynamics method to investigate the effects of parallel and perpendicular E-fields on the water liquid-vapor interface. For this purpose, density distribution, number of hydrogen bonds, molecular orientation, and surface tension are examined to gain a better understanding of the interface structure. Results indicate enhancements in parallel E-field decrease the interface width and number of hydrogen bonds, while the opposite holds true in the case of perpendicular E-fields. Moreover, perpendicular fields disturb the water structure at the interface. Given that water molecules tend to be parallel to the interface plane, it is observed that perpendicular E-fields fail to realign water molecules in the field direction while the parallel ones easily do so. It is also shown that surface tension rises with increasing strength of parallel E-fields, while it reduces in the case of perpendicular E-fields. Enhancement of surface tension in the parallel field direction demonstrates how the floating water bridge forms between the beakers. Finally, it is found that application of external E-fields to the liquid-vapor interface does not lead to uniform changes in surface tension and that the liquid-vapor interfacial tension term in Young's equation should be calculated near the triple-line of the droplet. This is attributed to the multi-directional nature of the droplet surface, indicating that no constant value can be assigned to a droplet's surface tension in the presence of large electric fields.

  20. Preparation and Characterization of Pure Organic Dielectric Composites for Capacitors

    Directory of Open Access Journals (Sweden)

    Mao Xin

    2018-01-01

    Full Text Available This work reports the excellent dielectric composites were prepared from polyimide (PI and poly(vinylidene fluoride (PVDF via solution blending and thermal imidization or chemical imidization. The dielectric and thermal properties of the composites were studied. Results indicated that the dielectric properties of the composites synthesized by these two methods were enhanced through the introduction of PVDF, and the composites exhibited excellent thermal stability. Compared to the thermal imidization, the composites prepared by chemical imidization exhibited superior dielectric properties. This study demonstrated that the PI/PVDF composites were potential dielectric materials in the field of electronics.

  1. Dielectric strength of SiO2 in a CMOS transistor structure

    International Nuclear Information System (INIS)

    Soden, J.M.

    1979-01-01

    The distribution of experimental dielectric strengths of SiO 2 gate dielectric in a CMOS transistor structure is shown to be composed of a primary, statistically-normal distribution of high dielectric strength and a secondary distribution spread through the lower dielectric strength region. The dielectric strength was not significantly affected by high level (1 x 10 6 RADS (Si)) gamma radiation or high temperature (200 0 C) stress. The primary distribution breakdowns occurred at topographical edges, mainly at the gate/field oxide interface, and the secondary distribution breakdowns occurred at random locations in the central region of the gate

  2. High energy-resolution electron energy-loss spectroscopy study of the dielectric properties of bulk and nanoparticle LaB6 in the near-infrared region

    International Nuclear Information System (INIS)

    Sato, Yohei; Terauchi, Masami; Mukai, Masaki; Kaneyama, Toshikatsu; Adachi, Kenji

    2011-01-01

    The dielectric properties of LaB 6 crystals and the plasmonic behavior of LaB 6 nanoparticles, which have been applied to solar heat-shielding filters, were studied by high energy-resolution electron energy-loss spectroscopy (HR-EELS). An EELS spectrum of a LaB 6 crystal showed a peak at 2.0 eV, which was attributed to volume plasmon excitation of carrier electrons. EELS spectra of single LaB 6 nanoparticles showed peaks at 1.1-1.4 eV depending on the dielectric effect from the substrates. The peaks were assigned to dipole oscillation excitations. These peak energies almost coincided with the peak energy of optical absorption of a heat-shielding filter with LaB 6 nanoparticles. On the other hand, those energies were a smaller than a dipole oscillation energy predicted using the dielectric function of bulk LaB 6 crystal. It is suggested that the lower energy than expected is due to an excitation at 1.2 eV, which was observed for oxidized LaB 6 area. -- Highlights: → The dielectric properties of LaB 6 nanoparticles applied to solar heat-shielding filters were studied by HR-EELS. → Plasmon peak energies of the LaB 6 nanoparticles were almost equal to optical absorption energy of a heat-shielding filter. → From this result, near-infrared optical absorption of the filter is due to the surface dipole mode of the nanoparticles.

  3. Solid binary mixtures of neopentanol with tert-Butyl chloride and carbon tetrachloride studied by thermal, X-ray and dielectric techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, Girish; Murthy, S.S.N., E-mail: ssnm0700@gmail.com

    2016-05-10

    Highlights: • DSC, dielectric and X-ray measurements have been done on TBC-NPOH and CTC-NPOH. • The results show the formation of solid solution for concentrations 0.7 ≤ x{sub m} ≤ 0.9. • A primary α-process and two sub-T{sub g} processes are found for TBC-NPOH. • For CTC-NPOH only one sub-T{sub g} process is found. • All the three sub-T{sub g} processes are Johari–Goldstein type. - Abstract: The binary mixtures of Neopentanol (NPOH) with tert-Butyl chloride (TBC) and Carbon tetrachloride (CTC), have been studied using Differential Scanning Calorimetry, Dielectric spectroscopy and X-ray diffraction techniques. The results indicate the formation of the solid solutions. The crystalline solid thus formed is found to be orientationally disordered and supercools easily to form glassy crystal for mole fraction of NPOH in the range of 0.7–0.9. The T{sub g} values are in the range of 140–147 K. In the dielectric study, a primary α-process and two sub-T{sub g} processes are found for TBC-NPOH, whereas for CTC-NPOH only one sub-T{sub g} process is found. The dielectric spectra of α- process follows the Havriliak–Negami equation. The sub-T{sub g} processes follow the Cole–Cole equation, and are found to be of Johari–Goldstein type, indicating intermolecular nature.

  4. A Brief Study on the Ignition of the Non-Thermal Atmospheric Pressure Plasma Jet from a Double Dielectric Barrier Configured Plasma Pencil

    International Nuclear Information System (INIS)

    Begum, Asma; Laroussi, Mounir; Pervez, M. R.

    2013-01-01

    To understand the self sustained propagation of the plasma jet/bullet in air under atmospheric pressure, the ignition of the plasma jet/bullet, the plasma jet/bullet ignition point in the plasma pencil, the formation time and the formation criteria from a dielectric barrier configured plasma pencil were investigated in this study. The results were confirmed by comparing these results with the plasma jet ignition process in the plasma pencil without a dielectric barrier. Electrical, optical, and imaging techniques were used to study the formation of the plasma jet from the ignition of discharge in a double dielectric barrier configured plasma pencil. The investigation results show that the plasma jet forms at the outlet of the plasma pencil as a donut shaped discharge front because of the electric field line along the outlet's surface. It is shown that the required time for the formation of the plasma jet changes with the input voltage of the discharge. The input power calculation for the gap discharge and for the whole system shows that 56% of the average input power is used by the first gap discharge. The estimated electron density inside the gap discharge is in the order of 10 11 cm −3 . If helium is used as a feeding gas, a minimum 1.48×10 −8 C charge is required per pulse in the gap discharge to generate a plasma jet

  5. An experimental study of electrical and dielectric properties of consolidated clayey materials; Etude experimentale des proprietes electriques et dielectriques des materiaux argileux consolides

    Energy Technology Data Exchange (ETDEWEB)

    Comparon, L

    2005-06-15

    This study is devoted to the electrical and dielectric properties of consolidated clays. A better understanding of the conduction and polarization phenomena in clays is necessary to better interpret in situ measurements in terms of water saturation and texture. An experimental study was carried out on synthetic clay samples (kaolinite and smectite) compacted with various water contents, porosities and mineralogical compositions, on a large frequency range, using three laboratory setups. The electrical properties of natural argillites (from ANDRA) were then investigated. We found that the response of the synthetic samples is mainly controlled by water content on the whole frequency range; two polarization phenomena were observed, which were related to the Maxwell-Wagner polarization and the electrical double layer polarization around the clay particles. The electrical response of argillites is more complex; it is controlled by water content but also by the microstructure of the rock. In these rocks, the electrical and dielectric anisotropies are high; anisotropy was also measured for the synthetic clays. The existing models explain the high frequency limit of the dielectric permittivity of the clayey materials, but the low frequency part of the spectra ({<=}1 MHz) needs theoretical developments. (author)

  6. Dielectric Actuation of Polymers

    Science.gov (United States)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  7. A density functional and quantum Monte Carlo study of glutamic acid in vacuo and in a dielectric continuum medium

    NARCIS (Netherlands)

    Floris, F.; Filippi, Claudia; Amovilli, C.

    2012-01-01

    We present density functional theory (DFT) and quantum Monte Carlo (QMC) calculations of the glutamic acid and glutamate ion in vacuo and in various dielectric continuum media within the polarizable continuum model (PCM). In DFT, we employ the integral equation formalism variant of PCM while, in

  8. A Study of the Dielectric Breakdown of SiO2 Films on Si by the Self- Quenching Technique

    Science.gov (United States)

    1974-10-01

    Cambell . Much of the early work on the breakdown of oxide films in 2 1 Q MOS structures was done by N. Klein and his coworkers...Electron Physics, 26, Academic Press. New York (1969). P. J. Harrop and D. S. Cambell , "Dielectric Properties of Thin Films," Handbook of Thin Film

  9. Theoretical study of reactions at the electrode-electrolyte interface

    International Nuclear Information System (INIS)

    Halley, J.W.

    1994-01-01

    Electron transfer rates are predicted by numerical methods, in collaboration with ANL. Emphasis is on electron transfer involving ions known to be important in enhancing stress corrosion cracking in light water reactors and on electron transfer at oxide surfaces. We have completed studies of the ferrous-ferric electron transfer rate in which effects of electric field, entropic effects in the free energy and quantum effects are included for the first time in the calculation of the rate of an electrochemical (heterogeneous) reaction rate. These new results confirm assumptions made in earlier calculations. The ferric ion has been modelled in a dissociable polarizable model showing the six-fold coordination of this ion in aqueous solution is stabilized by the three body interactions arising from the polarizability of water. In our studies of oxides, we have completed a Hartree self consistent calculation of the electronic structure of fayalite. The calculation utilizes a new method which takes phenomenological account of local electron correlations which have plagued electronic structure calculations of oxides for a long time. No electronic structure calculation of fayalite has been previously reported to our knowledge. Similar methods have been used to calculate the electronic structure of a vacancy in rutile (TiO 2 ). Results show that the screening donor electrons are anisotropically distributed around the vacancy

  10. Modeling of environmentally significant interfaces: Two case studies

    International Nuclear Information System (INIS)

    Williford, R.E.

    2006-01-01

    When some parameters cannot be easily measured experimentally, mathematical models can often be used to deconvolute or interpret data collected on complex systems, such as those characteristic of many environmental problems. These models can help quantify the contributions of various physical or chemical phenomena that contribute to the overall behavior, thereby enabling the scientist to control and manipulate these phenomena, and thus to optimize the performance of the material or device. In the first case study presented here, a model is used to test the hypothesis that oxygen interactions with hydrogen on the catalyst particles of solid oxide fuel cell anodes can sometimes occur a finite distance away from the triple phase boundary (TPB), so that such reactions are not restricted to the TPB as normally assumed. The model may help explain a discrepancy between the observed structure of SOFCs and their performance. The second case study develops a simple physical model that allows engineers to design and control the sizes and shapes of mesopores in silica thin films. Such pore design can be useful for enhancing the selectivity and reactivity of environmental sensors and catalysts. This paper demonstrates the mutually beneficial interactions between experiment and modeling in the solution of a wide range of problems

  11. Integrating Virtual Worlds with Tangible User Interfaces for Teaching Mathematics: A Pilot Study.

    Science.gov (United States)

    Guerrero, Graciela; Ayala, Andrés; Mateu, Juan; Casades, Laura; Alamán, Xavier

    2016-10-25

    This article presents a pilot study of the use of two new tangible interfaces and virtual worlds for teaching geometry in a secondary school. The first tangible device allows the user to control a virtual object in six degrees of freedom. The second tangible device is used to modify virtual objects, changing attributes such as position, size, rotation and color. A pilot study on using these devices was carried out at the "Florida Secundaria" high school. A virtual world was built where students used the tangible interfaces to manipulate geometrical figures in order to learn different geometrical concepts. The pilot experiment results suggest that the use of tangible interfaces and virtual worlds allowed a more meaningful learning (concepts learnt were more durable).

  12. Integrating Virtual Worlds with Tangible User Interfaces for Teaching Mathematics: A Pilot Study

    Directory of Open Access Journals (Sweden)

    Graciela Guerrero

    2016-10-01

    Full Text Available This article presents a pilot study of the use of two new tangible interfaces and virtual worlds for teaching geometry in a secondary school. The first tangible device allows the user to control a virtual object in six degrees of freedom. The second tangible device is used to modify virtual objects, changing attributes such as position, size, rotation and color. A pilot study on using these devices was carried out at the “Florida Secundaria” high school. A virtual world was built where students used the tangible interfaces to manipulate geometrical figures in order to learn different geometrical concepts. The pilot experiment results suggest that the use of tangible interfaces and virtual worlds allowed a more meaningful learning (concepts learnt were more durable.

  13. A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

    International Nuclear Information System (INIS)

    Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

    2010-01-01

    High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

  14. Broadband dielectric spectroscopy of oxidized porous silicon

    International Nuclear Information System (INIS)

    Axelrod, Ekaterina; Urbach, Benayahu; Sa'ar, Amir; Feldman, Yuri

    2006-01-01

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals

  15. Broadband dielectric spectroscopy of oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Axelrod, Ekaterina [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Urbach, Benayahu [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Sa' ar, Amir [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Feldman, Yuri [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel)

    2006-04-07

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals.

  16. Single crystal magnetic, dielectric and thermal studies of the relaxor ferroelectric Pb(Fe2/3W1/3)O3

    International Nuclear Information System (INIS)

    Ye, Z.G.; Sato, M.; Kita, E.; Bursill, L.A.; Schmid, H.

    1998-01-01

    The magnetic, dielectric and thermal properties of the complex perovskite Pb(Fe 2/3 W 1/3 )O 3 [PFW] have been studied on single crystals by means of a SQUID magnetometer, dielectric measurements and thermal analysis. Anomalies in the temperature dependence of the magnetization have revealed magnetic phase transitions at T N1 =350 K and T N2 =20 K. These two steps of antiferromagnetic ordering are attributed to the microstructural feature of the complex perovskite, characterized by ordered and disordered arrangements on the B-site, giving rise to a strong superexchange interaction of - Fe 3 + - O - Fe 3+ - type with a higher ordering temperature, and to a weak superexchange interaction of the B-site ordered elpasolite type - Fe 3+ + - O - W - O - Fe 3+ - with a lower Neel temperature. The low temperature antiferromagnetic phase exhibits a weak ferromagnetism. The dielectric properties of PFW show a relaxor ferroelectric behaviour with a dispersive maximum of permittivity at Tm (170 -190 K). The magnetic phase transition at T N2 =20 K results in anomalies both of the real part of permittivity and the dissipation factor, suggesting a magneto-electric coupling via magneto-structural interactions

  17. A case study on better iconographic design in electronic medical records' user interface.

    Science.gov (United States)

    Tasa, Umut Burcu; Ozcan, Oguzhan; Yantac, Asim Evren; Unluer, Ayca

    2008-06-01

    It is a known fact that there is a conflict between what users expect and what user interface designers create in the field of medical informatics along with other fields of interface design. The objective of the study is to suggest, from the 'design art' perspective, a method for improving the usability of an electronic medical record (EMR) interface. The suggestion is based on the hypothesis that the user interface of an EMR should be iconographic. The proposed three-step method consists of a questionnaire survey on how hospital users perceive concepts/terms that are going to be used in the EMR user interface. Then icons associated with the terms are designed by a designer, following a guideline which is prepared according to the results of the first questionnaire. Finally the icons are asked back to the target group for proof. A case study was conducted with 64 medical staff and 30 professional designers for the first questionnaire, and with 30 medical staff for the second. In the second questionnaire 7.53 icons out of 10 were matched correctly with a standard deviation of 0.98. Also, all icons except three were matched correctly in at least 83.3% of the forms. The proposed new method differs from the majority of previous studies which are based on user requirements by leaning on user experiments instead. The study demonstrated that the user interface of EMRs should be designed according to a guideline that results from a survey on users' experiences on metaphoric perception of the terms.

  18. Contemporary dielectric materials

    CERN Document Server

    Saravanan, R

    2016-01-01

    This book deals with experimental results of the physical characterization of several important, dielectric materials of great current interest. The experimental tools used for the analysis of these materials include X-ray diffraction, dielectric measurements, magnetic measurements using a vibrating sample magnetometer, optical measurements using a UV-Visible spectrometer etc.

  19. Dielectric Modulated FET (DMFET)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the nanogap cavity leads to change in effective gate capacitance and thus gate bias for FET. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the ...

  20. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  1. Light in complex dielectrics

    NARCIS (Netherlands)

    Schuurmans, F.J.P.

    1999-01-01

    In this thesis the properties of light in complex dielectrics are described, with the two general topics of "modification of spontaneous emission" and "Anderson localization of light". The first part focuses on the spontaneous emission rate of an excited atom in a dielectric host with variable

  2. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer

    Directory of Open Access Journals (Sweden)

    Shijiao Han

    2016-07-01

    Full Text Available To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs, a polar polymer layer was inserted between two polymethyl methacrylate (PMMA dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol (PVA or poly(4-vinylphenol (PVP containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one, and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type. The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

  3. Structural stability of characteristic interface for NiTi/Nb Nanowire: First-Principle study

    Science.gov (United States)

    Li, G. F.; Zheng, H. Z.; Shu, X. Y.; Peng, P.

    2016-01-01

    Compared with some other conventional interface models, the interface of NiTi(211)/Nb(220) in NiTiNb metal nanocomposite had been simulated and analyzed carefully. Results show that only several interface models, i.e., NiTi(100)/Nb(100)(Ni⃡Nb), NiTi(110)/Nb(110) and NiTi(211)/Nb(220), can be formed accordingly with their negative formation enthalpy. Therein the cohesive energy Δ E and Griffith rupture work W of NiTi(211)/Nb(220) interface model are the lowest among them. Density of states shows that there exists only one electronic bonding peak for NiTi(211)/Nb(220) interface model at -2.5 eV. Electron density difference of NiTi(211)/ Nb(220) shows that the Nb-Nb, Nb-Ti and Nb-Ni bonding characters seem like so peaceful as a fabric twisting every atom, which is different from conventional metallic bonding performance. Such appearance can be deduced that the metallic bonding between Nb-Nb, Nb-Ti and Nb-Ni in NiTi(211)/Nb(220) may be affected by its nanostructure called nanometer size effect. Thus, our findings open an avenue for detailed and comprehensive studies of nanocomposite.

  4. Experimental Study on Bond Behavior of FRP-Concrete Interface in Hygrothermal Environment

    Directory of Open Access Journals (Sweden)

    X. H. Zheng

    2016-01-01

    Full Text Available As the technique of fiber-reinforced polymer (FRP composite material strengthened reinforced concrete structures is widely used in the field of civil engineering, durability of the strengthened structures has attracted more attention in recent years. Hygrothermal environment has an adverse effect on the bond behavior of the interface between FRP and concrete. This paper focuses on the bond durability of carbon fiber laminate- (CFL- concrete interface in hygrothermal condition which simulates the climate characteristic in South China. Twenty 100 mm × 100 mm × 720 mm specimens were divided into 6 groups based on different temperature and humidity. After pretreatment in hygrothermal environment, the specimens were tested using double shear method. Strain gauges bonded along the CFL surface and linear variation displacement transducers (LVDTs were used to measure longitudinal strains and slip of the interface. Failure mode, ultimate capacity, load-deflection relationship, and relative slip were analyzed. The bond behavior of FRP-concrete interface under hygrothermal environment was studied. Results show that the ultimate bearing capacity of the interface reduced after exposure to hygrothermal environments. The decreasing ranges were up to 27.9% after exposure at high temperature and humidity (60°C, 95% RH. The maximum strains (εmax of the specimens pretreated decreased obviously which indicated decay of the bond behavior after exposure to the hygrothermal environment.

  5. Theoretical study of heat transfer with moving phase-change interface in thawing of frozen food

    International Nuclear Information System (INIS)

    Leung, M; Ching, W H; Leung, D Y C; Lam, G C K

    2005-01-01

    A theoretical solution was obtained for a transient phase-change heat transfer problem in thawing of frozen food. In the physical model, a sphere originally at a uniform temperature below the phase-change temperature is suddenly immersed in a fluid at a temperature above the phase-change temperature. As the body temperature increases, the phase-change interface will be first formed on the surface. Subsequently, the interface will absorb the latent heat and move towards the centre until the whole body undergoes complete phase change. In the mathematical formulation, the nonhomogeneous problem arises from the moving phase-change interface. The solution in terms of the time-dependent temperature field was obtained by use of Green's function. A one-step Newton-Raphson method was specially designed to solve for the position of the moving interface to satisfy the interface condition. The theoretical results were compared with numerical results generated by a finite difference model and experimental measurements collected from a cold water thawing process. As a good agreement was found, the theoretical solution developed in this study was verified numerically and experimentally. Besides thawing of frozen food, there are many other practical applications of the theoretical solution, such as food freezing, soil freezing/thawing, metal casting and bath quenching heat treatment, among others

  6. Theoretical study of heat transfer with moving phase-change interface in thawing of frozen food

    Science.gov (United States)

    Leung, M.; Ching, W. H.; Leung, D. Y. C.; Lam, G. C. K.

    2005-02-01

    A theoretical solution was obtained for a transient phase-change heat transfer problem in thawing of frozen food. In the physical model, a sphere originally at a uniform temperature below the phase-change temperature is suddenly immersed in a fluid at a temperature above the phase-change temperature. As the body temperature increases, the phase-change interface will be first formed on the surface. Subsequently, the interface will absorb the latent heat and move towards the centre until the whole body undergoes complete phase change. In the mathematical formulation, the nonhomogeneous problem arises from the moving phase-change interface. The solution in terms of the time-dependent temperature field was obtained by use of Green's function. A one-step Newton-Raphson method was specially designed to solve for the position of the moving interface to satisfy the interface condition. The theoretical results were compared with numerical results generated by a finite difference model and experimental measurements collected from a cold water thawing process. As a good agreement was found, the theoretical solution developed in this study was verified numerically and experimentally. Besides thawing of frozen food, there are many other practical applications of the theoretical solution, such as food freezing, soil freezing/thawing, metal casting and bath quenching heat treatment, among others.

  7. Beam Dynamics Simulation Platform and Studies of Beam Breakup in Dielectric Wakefield Structures

    International Nuclear Information System (INIS)

    Schoessow, P.; Kanareykin, A.; Jing, C.; Kustov, A.; Altmark, A.; Gai, W.

    2010-01-01

    A particle-Green's function beam dynamics code (BBU-3000) to study beam breakup effects is incorporated into a parallel computing framework based on the Boinc software environment, and supports both task farming on a heterogeneous cluster and local grid computing. User access to the platform is through a web browser.

  8. A first principles study of adhesion and electronic structure at Fe (110)/graphite (0001) interface

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yangzhen; Xing, Jiandong; Li, Yefei, E-mail: yefeili@126.com; Sun, Liang; Wang, Yong

    2017-05-31

    Highlights: • The surface energy of graphite (0001) and Fe (110) has been calculated and the number of layers of graphite slab and Fe slab has been estimated. • The work of adhesion of Fe (110)/graphite (0001) interface with different interfacial separation d{sub 0} (1.7–3 Å) has been systematically discussed. • The total electron density and electron density difference of Fe (110)/graphite (0001) are used to study the bonding characteristics. • The Interfacial energy and fracture toughness of Fe (110)/graphite (0001) are estimated. - Abstract: Using first–principles calculations, we discuss the bulk properties of bcc Fe and graphite and that of the surface, the work of adhesion, and the electronic structure of Fe (110)/graphite (0001) interface. In this study, the experimental results of the bulk properties of bcc Fe and graphite reveal that our adopted parameters are reliable. Moreover, the results of surface energy demonstrate that nine atomic layers of graphite (0001) and five atomic layers of Fe (110) exhibit bulk–like interiors. The lattice mismatch of Fe (110)/graphite (0001) interface is about 6%. The results also exhibit that the Fe atom residing on top of the second layer of graphite slab (HCP structure) is the preferred stacking sequence. The work of adhesion (W{sub ad}) of the optimized Fe/graphite interface of HCP structure is 1.36 J/m{sup 2}. Electronic structures indicate that the bonding characteristics are a mixture of covalent and ionic bonds in the HCP interface. Moreover, the magnetic moment of atoms at the interface was studied using the spin polarized density of states.

  9. Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

    Science.gov (United States)

    Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

    2018-01-01

    The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

  10. Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

    Science.gov (United States)

    Corneille, Jason Stephen

    This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

  11. Green, Innovative, and Profitable: A Case Study of Managerial Capabilities at Interface Inc.

    Directory of Open Access Journals (Sweden)

    Tommi Lampikoski

    2012-11-01

    Full Text Available This article describes the pioneering green-innovation management practices of a resource-intensive corporation, Interface Inc., which is a globally operating carpet manufacturer. Even during the current economic downturn, many companies remain committed to advancing their green business agendas. However, recent research suggests that most of these companies are far from reaching substantial competitive advantage from this commitment because they lack the connection between their green agendas and core innovation-management activities. This study illustrates how Interface succeeded with radical green innovations by investing in managerial capabilities that allowed it to conduct research, recognize opportunities, and revolutionize the carpeting industry. These capabilities enabled Interface to continuously challenge and disrupt well-established management recipes, existing knowledge, and proven industrial practices, and they enabled it to create a sustainable competitive advantage through a winning portfolio of radical green innovations.

  12. In-Situ TEM Study of Interface Sliding and Migration in an Ultrafine Lamellar Structure

    Energy Technology Data Exchange (ETDEWEB)

    Hsiung, L M

    2005-12-06

    The instability of interfaces in an ultrafine TiAl-({gamma})/Ti{sub 3}Al-({alpha}{sub 2}) lamellar structure by straining at room temperature has been investigated using in-situ straining techniques performed in a transmission electron microscope. The purpose of this study is to obtain experimental evidence to support the creep mechanisms based upon the interface sliding in association with a cooperative movement of interfacial dislocations previously proposed to interpret the nearly linear creep behavior observed from ultrafine lamellar TiAl alloys. The results have revealed that both the sliding and migration of lamellar interfaces can take place simultaneously as a result of the cooperative movement of interfacial dislocations.

  13. Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

    Energy Technology Data Exchange (ETDEWEB)

    Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B

    2003-04-15

    Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T{sub S}=450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal {beta}-MoSi{sub 2} could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet.

  14. Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

    International Nuclear Information System (INIS)

    Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B.

    2003-01-01

    Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T S =450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal β-MoSi 2 could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet

  15. Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

    Directory of Open Access Journals (Sweden)

    Valeria Bragaglia

    2017-08-01

    Full Text Available A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111 oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

  16. Layered interfaces between immiscible liquids studied by density-functional theory and molecular-dynamics simulations.

    Science.gov (United States)

    Geysermans, P; Elyeznasni, N; Russier, V

    2005-11-22

    We present a study of the structure in the interface between two immiscible liquids by density-functional theory and molecular-dynamics calculations. The liquids are modeled by Lennard-Jones potentials, which achieve immiscibility by suppressing the attractive interaction between unlike particles. The density profiles of the liquids display oscillations only in a limited part of the simple liquid-phase diagram (rho,T). When approaching the liquid-vapor coexistence, a significant depletion appears while the layering behavior of the density profile vanishes. By analogy with the liquid-vapor interface and the analysis of the adsorption this behavior is suggested to be strongly related to the drying transition.

  17. Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition

    Science.gov (United States)

    Karamat, S.; Çelik, K.; Shah Zaman, S.; Oral, A.

    2018-06-01

    High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment of other dielectrics with graphene needs more exploration. A potential dielectric material is required which could be used to grow graphene with all these qualities. Direct growth of graphene on magnesium oxide (MgO) substrates is an interesting idea and will be a new addition in the library of 2D materials. The present work is about the direct growth of graphene on MgO substrates by an ambient pressure chemical vapour deposition (CVD) method. We address the surface instability issue of the polar oxides which is the most challenging factor in MgO. Atomic force microscopy (AFM) measurements showed the topographical features of the graphene coated on MgO. X-ray photoelectron spectroscopy (XPS) study is carried out to extract information regarding the presence of necessary elements, their bonding with substrates and to confirm the sp-2 hybridization of carbon, which is a characteristic feature of graphene film. The chemical shift is due to the surface reconstruction of MgO in the prepared samples. For graphene-MgO interface, valence band offset (VBO) and conduction band offset (CBO) extracted from valence band spectra reported. Further, we predicted the energy band diagram for single layer and thin film of graphene. By using the room-temperature energy band gap values of MgO and graphene, the CBO is calculated to be 6.85 eV for single layer and 5.66 eV for few layer (1-3) of graphene layers.

  18. Note: Tesla based pulse generator for electrical breakdown study of liquid dielectrics

    Science.gov (United States)

    Veda Prakash, G.; Kumar, R.; Patel, J.; Saurabh, K.; Shyam, A.

    2013-12-01

    In the process of studying charge holding capability and delay time for breakdown in liquids under nanosecond (ns) time scales, a Tesla based pulse generator has been developed. Pulse generator is a combination of Tesla transformer, pulse forming line, a fast closing switch, and test chamber. Use of Tesla transformer over conventional Marx generators makes the pulse generator very compact, cost effective, and requires less maintenance. The system has been designed and developed to deliver maximum output voltage of 300 kV and rise time of the order of tens of nanoseconds. The paper deals with the system design parameters, breakdown test procedure, and various experimental results. To validate the pulse generator performance, experimental results have been compared with PSPICE simulation software and are in good agreement with simulation results.

  19. Evaluation of a novel Conjunctive Exploratory Navigation Interface for consumer health information: a crowdsourced comparative study.

    Science.gov (United States)

    Cui, Licong; Carter, Rebecca; Zhang, Guo-Qiang

    2014-02-10

    Numerous consumer health information websites have been developed to provide consumers access to health information. However, lookup search is insufficient for consumers to take full advantage of these rich public information resources. Exploratory search is considered a promising complementary mechanism, but its efficacy has never before been rigorously evaluated for consumer health information retrieval interfaces. This study aims to (1) introduce a novel Conjunctive Exploratory Navigation Interface (CENI) for supporting effective consumer health information retrieval and navigation, and (2) evaluate the effectiveness of CENI through a search-interface comparative evaluation using crowdsourcing with Amazon Mechanical Turk (AMT). We collected over 60,000 consumer health questions from NetWellness, one of the first consumer health websites to provide high-quality health information. We designed and developed a novel conjunctive exploratory navigation interface to explore NetWellness health questions with health topics as dynamic and searchable menus. To investigate the effectiveness of CENI, we developed a second interface with keyword-based search only. A crowdsourcing comparative study was carefully designed to compare three search modes of interest: (A) the topic-navigation-based CENI, (B) the keyword-based lookup interface, and (C) either the most commonly available lookup search interface with Google, or the resident advanced search offered by NetWellness. To compare the effectiveness of the three search modes, 9 search tasks were designed with relevant health questions from NetWellness. Each task included a rating of difficulty level and questions for validating the quality of answers. Ninety anonymous and unique AMT workers were recruited as participants. Repeated-measures ANOVA analysis of the data showed the search modes A, B, and C had statistically significant differences among their levels of difficulty (Pconsumer health information retrieval and

  20. Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

    CERN Document Server

    Helling, Cole Michael; The ATLAS collaboration

    2018-01-01

    The ATLAS Upgrade strip module design has readout flex circuits glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. The process requires radiation-hard adhesives compatible with the sensor technology. We report on the studies of the breakdown behavior with miniature versions of the prototype sensors, where candidate adhesives were placed in several locations on top of the sensor, including the strip area, guard ring region, and sensor edge. Thermal cycling tends to attenuate the observed cases of breakdown with glue on top of the guard ring. Glue reaching the sensor edge results in low breakdown voltage if it also covers AC- or DC- pads or bias ring openings. Glue placement on top of guard ring region was performed on a large-format sensor, with generally similar results to the miniature sensor tests, except for a large glue deposition, which resulted in a permanent reduction of the breakdown voltage. Post-irradiation measurements were perf...