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Sample records for devices photo-switched conductors

  1. Photo-stimulated resistive switching of ZnO nanorods

    International Nuclear Information System (INIS)

    Park, Jinjoo; Lee, Seunghyup; Yong, Kijung

    2012-01-01

    Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states. (paper)

  2. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  3. A new kind of low-inductance transformer type magnetic switch (TTMS) with coaxial cylindrical conductors.

    Science.gov (United States)

    Zhang, Yu; Liu, Jinliang

    2013-02-01

    As important devices for voltage boosting and switching, respectively, pulse transformer and magnetic switch are widely used in pulsed power technology. In this paper, a new kind of transformer type magnetic switch (TTMS) with coaxial cylindrical conductors is put forward to combine the functions of voltage boosting and switching in one power device. As a compact combination device of discrete pulse transformer and magnetic switch, the compact TTMS decreases the required volume of magnetic cores in a large scale. The primary windings of the TTMS have a parallel combination structure so that the TTMS which only has 3 turns of secondary windings has a step-up ratio at 1:9. Before the magnetic core saturates, the TTMS has low unsaturated inductances of windings and good pulse response characteristics, so it can be used to substitute the Marx generator to charge the pulse forming line (PFL) at the ranges of several hundred kV and several hundred ns. After the core saturates, the cylindrical conductors can decrease the saturated inductance of the secondary windings of TTMS to a level less than 400 nH. As a result, the proposed TTMS can be used as the boosting transformer and main switch of helical Blumlein PFL to form the quasi-square voltage pulse on the 160 Ω load with a short pulse rise time only at 60 ns.

  4. Ultra-fast and sensitive photo-induced phase switching in (EDO-TTF)2PF6

    International Nuclear Information System (INIS)

    Chollet, Matthieu; Guerin, Laurent; Uchida, Naoki; Fukaya, Souichi; Ishikawa, Tadahiko; Koshihara, Shin-ya; Matsuda, Kazunari; Yamochi, Hideki; Ota, Akira; Saito, Gunzi

    2005-01-01

    Organic conductor (EDO-TTF) 2 PF 6 crystal having 14 filled band shows a metal (M)-insulator (I) transition accompanied with Peierls transition, charge ordering, and anion ordering at transition temperature, T C =280K. This crystal is an important and fascinating candidate for photo-induced M-I transition because the multi-instability will afford sensitivity to the tiny stimulation. We make the report of the reflectivity change in (EDO-TTF) 2 PF 6 crystal induced by the irradiation of femto-second (fs) pulsed laser (pulse width: 120fs, main wavelength: 800nm, repetition rate: 1kHz). The obtained results indicate that the highly efficient I-to-M transition occurs within 3ps in this material. Based on these results, the strong electron-lattice cooperative interaction is proved to play an essential role in the driving process of this M-I transition. Also, 14 filled materials, which show M-I transition, accompanied with the charge ordering, can be classified as fascinating candidates not only for superconductivity but also for photo-induced cooperative phenomena and application in phase switching devices

  5. Protective device for battery to protect against heavy discharge

    Energy Technology Data Exchange (ETDEWEB)

    1979-02-08

    The protective device according to the invention switches the equipment being supplied from the battery at a pre-determined discharge voltage by means of a switching device controlled by monitoring equipment. A semi-conductor element is used as the switching device. The current taken from the battery flows through the semi-conductor element to the equipment and to the monitoring device. When the discharge voltage is reached the semi-conductor element blocks. The semi-conductor switch can consist of transistors. The invention is explained by means of drawings and examples.

  6. Photo-switching element

    Energy Technology Data Exchange (ETDEWEB)

    Masaki, Yuichi

    1987-10-31

    Photo-input MOS transistor (Photo-switching element) cannot give enough ON/OFF ratio but requires an auxiliary condenser for a certain type of application. In addition, PN junction of amorphous silicon is not practical because it gives high leak current resulting in low electromotive force. In this invention, a solar cell was constructed with a lower electrode consisting of a transparent electro-conducting film, a photosensitive part consisting of an amorphous Si layer of p-i-n layer construction, and an upper metal electrode consisting of Cr or Nichrome, and a thin film transistor was placed on the solar cell, and further the upper metal electrode was co-used as a gate electrode of the thin film transistor; this set-up of this invention enabled to attain an efficient photo-electric conversion of the incident light, high electromotive force of the solar cell, and the transistor with high ON/OFF ratio. (3 figs)

  7. Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

    Science.gov (United States)

    Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

    2012-01-10

    An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. High voltage photo switch package module

    Science.gov (United States)

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  9. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    Science.gov (United States)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  10. Transparent conductors based on microscale/nanoscale materials for high performance devices

    Science.gov (United States)

    Gao, Tongchuan

    Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short

  11. Composite Material Switches

    Science.gov (United States)

    Javadi, Hamid (Inventor)

    2002-01-01

    A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

  12. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  13. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    Science.gov (United States)

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

  14. The approach of in-situ doping ion conductor fabricated with the cathodic arc plasma for all-solid-state electrochromic devices

    Directory of Open Access Journals (Sweden)

    Min-Chuan Wang

    2018-01-01

    Full Text Available The all-solid-state electrochromic device (ECD with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS and in-situ doping cathodic vacuum arc plasma (CVAP technology has been developed. The electrochromic (EC layer and ion conductor layer were deposited by reactive DCMS and CVAP technology, respectively. The in-situ doping ion conductor Ta2O5 deposited by the CVAP technology has provided the better material structure for ion transportation and showed about 2 times ion conductivity than the external doping process. The all-solid-state ECD with the in-situ doping CVAP ion conductor layer has demonstrated a maximum transmittance variation (ΔT of 71% at 550 nm, and a faster switching speed. The lower production cost and higher process stability could be achieved by the application of in-situ doping CVAP technology without breaking the vacuum process. Furthermore, the ion doping process with the reuse of energy during the CVAP process is not only decreasing the process steps, but also reducing the process energy consumption.

  15. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Directory of Open Access Journals (Sweden)

    Peng Xia

    2017-11-01

    Full Text Available A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF state to low resistance (ON state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  16. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Science.gov (United States)

    Xia, Peng; Li, Luman; Wang, Pengfei; Gan, Ying; Xu, Wei

    2017-11-01

    A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  17. Studies on advanced superconductors for fusion device. Pt. 1. Present status of Nb3Sn conductors

    International Nuclear Information System (INIS)

    Tachikawa, Kyoji; Yamamoto, Junya

    1996-03-01

    Nb 3 Sn conductors have been developed with great expectation as an advanced high-field superconductor to be used in fusion devices of next generation. Furthermore, Nb 3 Sn conductors are being developed for NMR magnet and superconducting generator as well as for cryogen-free superconducting magnet. A variety of fabrication procedures, such as bronze process, internal tin process and Nb tube method, have been developed based on the diffusion reaction. Recently, Nb 3 Sn conductors with ultra-thin filaments have been fabricated for AC use. Both high-field and AC performances of Nb 3 Sn conductors have been significantly improved by alloying addition. The Ti-doped Nb 3 Sn conductor has generated 21.5T at 1.8K operation. This report summarizes manufacturing procedures, superconducting performances and applications of Nb 3 Sn conductors fabricated through different processes in different countries. More detailed subjects included in this report are high-field properties, AC properties, conductors for fusion with large current capacities, stress-strain effect and irradiation effect as well as standardization of critical current measurement method regarding to Nb 3 Sn conductors. Comprehensive grasp on the present status of Nb 3 Sn conductors provided by this report will act as a useful data base for the future planning of fusion devices. (author). 172 refs

  18. Fast Switching Electrochromic Devices Containing Optimized BEMA/PEGMA Gel Polymer Electrolytes

    Directory of Open Access Journals (Sweden)

    N. Garino

    2013-01-01

    Full Text Available An optimized thermoset gel polymer electrolyte based on Bisphenol A ethoxylate dimethacrylate and Poly(ethylene glycol methyl ether methacrylate (BEMA/PEGMA was prepared by facile photo-induced free radical polymerisation technique and tested for the first time in electrochromic devices (ECD combining WO3 sputtered on ITO as cathodes and V2O5 electrodeposited on ITO as anodes. The behaviour of the prepared ECD was investigated electrochemically and electro-optically. The ECD transmission spectrum was monitored in the visible and near-infrared region by varying applied potential. A switching time of ca. 2 s for Li+ insertion (coloring and of ca. 1 s for Li+ de-insertion (bleaching were found. UV-VIS spectroelectrochemical measurements evidenced a considerable contrast between bleached and colored state along with a good stability over repeated cycles. The reported electrochromic devices showed a considerable enhancement of switching time with respect to the previously reported polymeric ECD indicating that they are good candidates for the implementation of intelligent windows and smart displays.

  19. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  20. Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

    Science.gov (United States)

    Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

    2017-07-27

    An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

  1. Electron collisions in gas switches

    International Nuclear Information System (INIS)

    Christophorou, L.G.

    1989-01-01

    Many technologies rely on the conduction/insulation properties of gaseous matter for their successful operation. Many others (e.g., pulsed power technologies) rely on the rapid change (switching or modulation) of the properties of gaseous matter from an insulator to a conductor and vice versa. Studies of electron collision processes in gases aided the development of pulsed power gas switches, and in this paper we shall briefly illustrate the kind of knowledge on electron collision processes which is needed to optimize the performance of such switching devices. To this end, we shall refer to three types of gas switches: spark gap closing, self-sustained diffuse discharge closing, and externally-sustained diffuse discharge opening. 24 refs., 15 figs., 2 tabs

  2. Photonic Switching Devices Using Light Bullets

    Science.gov (United States)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  3. Photo-induced cooperative covalent-bond switching in amorphous arsenic selenide

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Balitska, V [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Filipecki, J [Institute of Physics of Jan Dlugosz University, 13/15, Al. Armii Krajowej, Czestochowa, PL-42201 (Poland)

    2005-01-01

    A microstructural mechanism of photoinduced transformations in amorphous arsenic selenide films was studied with IR Fourier-spectroscopy technique in 300-100 cm{sup -1} region. It was shown that stage of irreversible photostructural changes was connected with cooperative process of coordination defect formation accompanied by homopolar chemical bonds switching in heteropolar ones. On the contrary, reversible photoinduced effects were caused by heteropolar chemical bonds switching in homopolar ones, as well as additional channel of bridge heteropolar bonds switching in short-layer ones. The both processes were associated with formation of anomalously coordinated defect pairs and accompanying atomic displacements at the level of medium-range ordering. The developed mathematical simulation procedure testified in a favour of defect-related origin of the reversible photo-thermallyinduced transformations, since their kinetics corresponded to known stretched-exponential dependence, tending to bimolecular behaviour rather then to single-exponential one.

  4. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  5. Contact materials for nanowire devices and nanoelectromechanical switches

    KAUST Repository

    Hussain, Muhammad Mustafa

    2011-02-01

    The impact of contact materials on the performance of nanostructured devices is expected to be signifi cant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifi cally discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

  6. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Science.gov (United States)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  7. Chemical switches and logic gates based on surface modified semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Szacilowski; Wojciech, Macyk [Jagiellonian Univ., Dept. of Chemistry, Krakow (Poland)

    2006-02-15

    Photoelectrochemical properties of multicomponent photo-electrodes based on titanium dioxide and cadmium sulfide powders modified with hexacyanoferrate complexes have been examined. Photocurrent responses were recorded as functions of applied potential and photon energy. Surprisingly, the photocurrent can be switched between positive and negative values as a result of potential or photon energy changes. This new effect called Photo Electrochemical Photocurrent Switching (PEPS) opens a possibility of new chemical switches and logic gates construction. Boolean logic analysis and a tentative mechanism of the device are discussed. (authors)

  8. Float level switch for a nuclear power plant containment vessel

    International Nuclear Information System (INIS)

    Powell, J.G.

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures

  9. Float level switch for a nuclear power plant containment vessel

    Science.gov (United States)

    Powell, James G.

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

  10. High voltage photo-switch package module having encapsulation with profiled metallized concavities

    Science.gov (United States)

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A

    2015-05-05

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

  11. Potential active materials for photo-supercapacitor: A review

    Science.gov (United States)

    Ng, C. H.; Lim, H. N.; Hayase, S.; Harrison, I.; Pandikumar, A.; Huang, N. M.

    2015-11-01

    The need for an endless renewable energy supply, typically through the utilization of solar energy in most applications and systems, has driven the expansion, versatility, and diversification of marketed energy storage devices. Energy storage devices such as hybridized dye-sensitized solar cell (DSSC)-capacitors and DSSC-supercapacitors have been invented for energy reservation. The evolution and vast improvement of these devices in terms of their efficiencies and flexibilities have further sparked the invention of the photo-supercapacitor. The idea of coupling a DSSC and supercapacitor as a complete energy conversion and storage device arose because the solar energy absorbed by dye molecules can be efficiently transferred and converted to electrical energy by adopting a supercapacitor as the energy delivery system. The conversion efficiency of a photo-supercapacitor is mainly dependent on the use of active materials during its fabrication. The performances of the dye, photoactive metal oxide, counter electrode, redox electrolyte, and conducting polymer are the primary factors contributing to high-energy-efficient conversion, which enhances the performance and shelf-life of a photo-supercapacitor. Moreover, the introduction of compact layer as a primary adherent film has been earmarked as an effort in enhancing power conversion efficiency of solar cell. Additionally, the development of electrolyte-free solar cell such as the invention of hole-conductor or perovskite solar cell is currently being explored extensively. This paper reviews and analyzes the potential active materials for a photo-supercapacitor to enhance the conversion and storage efficiencies.

  12. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  13. Coumarin-modified microporous-mesoporous Zn-MOF-74 showing ultra-high uptake capacity and photo-switched storage/release of U{sup VI} ions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Le; Wang, Lin Lin; Gong, Le Le; Feng, Xue Feng; Luo, Ming Biao; Luo, Feng, E-mail: ecitluofeng@163.com

    2016-07-05

    Graphical abstract: Table of content Herein, through coordination-based post-synthetic strategy, microporous-mesoporous Zn-MOF-74 was easily functionalized by grafting coumarin on coordinatively unsaturated Zn(II) centers, yielding a series of coumarin-modified Zn-MOF-74 materials. The obtained samples afforded ultra-high adsorption capacity for UVI ions from water with maximum adsorption capacities as high as 360 mg/g (the record value in MOFs) and remarkable photo-switched capability of 50 mg/g. - Highlights: • This work shows the record uptake capability of U{sup VI} (360 mg/g) in MOFs. • This work shows, for the first time, photo-switching behaviour towards U{sup VI} in aqueous solution. • This work demonstrates a simple and effective method to largely enhance uptake capability of U{sup VI}. • This work demonstrates a distinct method to prepare photo-sensitive MOFs for photo-switching behaviour towards guest molecules. - Abstract: Driven by an energy crisis but consequently puzzled by various environmental problems, uranium, as the basic material of nuclear energy, is now receiving extensive attentions. In contrast to numerous sorbents applied in this field, metal-organic framework (MOFs), as a renovated material platform, has only recently been developed. How to improve the adsorption capacity of MOF materials towards U{sup VI} ions, as well as taking advantage of the nature of these MOFs to design photo-switched behaviour for photo-triggered storage/release of U{sup VI} ions are at present urgent problems and great challenges to be solved. Herein, we show a simple and facile method to target the goal. Through coordination-based post-synthetic strategy, microporous- mesoporous Zn-MOF-74 was easily functionalized by grafting coumarin on coordinatively unsaturated Zn(II) centers, yielding a series of coumarin-modified Zn-MOF-74 materials. The obtained samples displayed ultra-high adsorption capacity for U{sup VI} ions from water at pH value of 4 with

  14. All-optical devices for ultrafast packet switching

    DEFF Research Database (Denmark)

    Dorren, H.J.S.; HerreraDorren, J.; Raz, O.

    2007-01-01

    We discuss integrated devices for all-optical packet switching. We focus on monolithically integrated all-optical flip-flops, ultra-fast semiconductor based wavelength converters and explain the operation principles. Finally, a 160 Gb/s all-optical packet switching experiment over 110 km of field...

  15. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit has a light emitting diode which supplies light to a photo-transistor, the light being interrupted from time to time. When the photo-transistor is illuminated, current builds up and when this current reaches a predetermined value, a trigger circuit changes state. The peak output of the photo-transistor is measured and the trigger circuit is arranged to change state when the output of the device is a set proportion of the peak output, so as to allow for aging of the components. The circuit is designed to control the ignition system in an automobile engine.

  16. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

    Science.gov (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

    2017-12-01

    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  17. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  18. Helical EMG module with explosive current opening switches

    International Nuclear Information System (INIS)

    Chernyshev, V.K.; Vakhrushev, V.V.; Volkov, G.I.; Ivanov, V.A.; Fetisov, I.K.

    1990-01-01

    To carry out the experimental work to study plasma properties, electromagnetic sources with 10 6 to 10 8 J of stored energy delivered to the load in microsecond time, are required. Among the current electromagnetic storage devices, the explosive magnetic generators (EMG) are of the largest energy capacity. The disadvantages of this type of generators is relatively long time (ten of microseconds) of electromagnetic energy cumulation in the deformable circuit. To reduce the time of energy transfer to the load to a microsecond range the switching scheme is generally used, where the cumulation circuit and that of the load are separated and connected in parallel via a switching element (opening switch) providing generation of desired power. In this paper, some ways and means of designing opening switches to generate high current pulses have been investigated. The opening switches to generate high current pulses have been investigated. The opening switches which operation is based on mechanic destruction of the conductor using high explosive, have the highest and most reliable performance. The authors have explored the mechanic disruption of a thin conductor (foil), the technique based on throwing the foil at the ribbed barrier of electric insulator material. The report presents the data obtained in studying the operation of this type of opening switch having cylindrical shape, 200 mm in diameter and 200 mm long, designed for generation of 5.5 MA current pulse in the load

  19. Light-activated resistance switching in SiOx RRAM devices

    Science.gov (United States)

    Mehonic, A.; Gerard, T.; Kenyon, A. J.

    2017-12-01

    We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

  20. Application of nanomaterials in two-terminal resistive-switching memory devices

    Directory of Open Access Journals (Sweden)

    Jianyong Ouyang

    2010-05-01

    Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

  1. Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

  2. Next-Generation Multifunctional Electrochromic Devices.

    Science.gov (United States)

    Cai, Guofa; Wang, Jiangxin; Lee, Pooi See

    2016-08-16

    The rational design and exploration of electrochromic devices will find a wide range of applications in smart windows for energy-efficient buildings, low-power displays, self-dimming rear mirrors for automobiles, electrochromic e-skins, and so on. Electrochromic devices generally consist of multilayer structures with transparent conductors, electrochromic films, ion conductors, and ion storage films. Synthetic strategies and new materials for electrochromic films and transparent conductors, comprehensive electrochemical kinetic analysis, and novel device design are areas of active study worldwide. These are believed to be the key factors that will help to significantly improve the electrochromic performance and extend their application areas. In this Account, we present our strategies to design and fabricate electrochromic devices with high performance and multifunctionality. We first describe the synthetic strategies, in which a porous tungsten oxide (WO3) film with nearly ideal optical modulation and fast switching was prepared by a pulsed electrochemical deposition method. Multiple strategies, such as sol-gel/inkjet printing methods, hydrothermal/inkjet printing methods, and a novel hybrid transparent conductor/electrochromic layer have been developed to prepare high-performance electrochromic films. We then summarize the recent advances in transparent conductors and ion conductor layers, which play critial roles in electrochromic devices. Benefiting from the developments of soft transparent conductive substrates, highly deformable electrochromic devices that are flexible, foldable, stretchable, and wearable have been achieved. These emerging devices have great potential in applications such as soft displays, electrochromic e-skins, deformable electrochromic films, and so on. We finally present a concept of multifunctional smart glass, which can change its color to dynamically adjust the daylight and solar heat input of the building or protect the users' privacy

  3. Resistive switching in mixed conductors : Ag2S as a model system

    NARCIS (Netherlands)

    Morales Masis, Monica

    2012-01-01

    Resistive switching memories have gained an increased interest due to the possibilities for downscaling of memory devices down to a few nanometers. These memories consist of a resistive material sandwiched between two metal electrodes, and applying a voltage between them induces resistance

  4. Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

    Science.gov (United States)

    Pan, Chengbin; Miranda, Enrique; Villena, Marco A.; Xiao, Na; Jing, Xu; Xie, Xiaoming; Wu, Tianru; Hui, Fei; Shi, Yuanyuan; Lanza, Mario

    2017-06-01

    Despite the enormous interest raised by graphene and related materials, recent global concern about their real usefulness in industry has raised, as there is a preoccupying lack of 2D materials based electronic devices in the market. Moreover, analytical tools capable of describing and predicting the behavior of the devices (which are necessary before facing mass production) are very scarce. In this work we synthesize a resistive random access memory (RRAM) using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals structures, and we develop a compact model that accurately describes its functioning. The devices were fabricated using scalable methods (i.e. CVD for material growth and shadow mask for electrode patterning), and they show reproducible resistive switching (RS). The measured characteristics during the forming, set and reset processes were fitted using the model developed. The model is based on the nonlinear Landauer approach for mesoscopic conductors, in this case atomic-sized filaments formed within the 2D materials system. Besides providing excellent overall fitting results (which have been corroborated in log-log, log-linear and linear-linear plots), the model is able to explain the dispersion of the data obtained from cycle-to-cycle in terms of the particular features of the filamentary paths, mainly their confinement potential barrier height.

  5. Electrochemical structure-switching sensing using nanoplasmonic devices

    Energy Technology Data Exchange (ETDEWEB)

    Patskovsky, Sergiy; Dallaire, Anne-Marie; Blanchard-Dionne, Andre-Pierre; Meunier, Michel [Department of Engineering Physics, Laser Processing and Plasmonics Laboratory, Polytechnique, Montreal, Station Centre-ville, QC (Canada); Vallee-Belisle, Alexis [Laboratory of Biosensors and Nanomachines, Departement de Chimie, Universite de Montreal, QC (Canada)

    2015-12-15

    In this article, the implementation of electrochemical plasmonic nanostructures functionalized with DNA-based structure-switching sensors is presented. eNanoSPR devices with open and microfluidic measurement cells are developed on the base of nanohole arrays in 100 nm gold film and applied for combined microscopic and electrochemical surface plasmon (eSPR) visualization. eSPR voltammograms and spectroscopy are performed using planar three electrode schematic with plasmonic nanostructure operated as working electrode. Limit of detection of eNanoSPR devices for oligonucleotide hybridization is estimated in the low nanomolar and applications for structure-switching electro-plasmonic sensing in complex liquids are discussed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Magnetically switched power supply system for lasers

    Science.gov (United States)

    Pacala, Thomas J. (Inventor)

    1987-01-01

    A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

  7. Design study of superconducting sextupole magnet using HTS coated conductor for neutron-focusing device

    International Nuclear Information System (INIS)

    Tosaka, T.; Koyanagi, K.; Ono, M.; Kuriyama, T.; Watanabe, I.; Tsuchiya, K.; Suzuki, J.; Adachi, T.; Shimizu, H.M.

    2006-01-01

    We performed a design study of sextupole magnet using high temperature superconducting (HTS) wires. The sextupole magnet is used as a focusing lens for neutron-focusing devices. A neutron-focusing device is desired to have a large aperture and a high magnetic field gradient of G, where G = 2B/r 2 , B is the magnetic field and r is a distance from the sextupole magnet axis. Superconducting magnets offer promising prospects to meet the demands of a neutron-focusing device. Recently NbTi coils of low temperature superconducting (LTS) have been developed for a sextupole magnet with a 46.8 mm aperture. The maximum magnetic field gradient G of this magnet is 9480 T/m 2 at 4.2 K and 12,800 T/m 2 at 1.8 K. On the other hand, rapid progress on second generation HTS wire has been made in increasing the performance of critical current and in demonstrating a long length. The second generation HTS wire is referred to as coated conductor. It consists of tape-shaped base upon which a thin coating of superconductor, usually YBCO, is deposited or grown. This paper describes a design study of sextupole magnet using coated conductors

  8. Photo- and electro-chromism of diarylethene modified ITO electrodes - towards molecular based read-write-erase information storage

    NARCIS (Netherlands)

    Areephong, J.; Browne, W.R.; Katsonis, N.; Feringa, B.L.

    2006-01-01

    Molecular memory devices based on dithienylethene switch modified ITO electrodes undergo reversible ring opening/closing both photo- and electro-chemically with non-destructive electrochemical readout.

  9. Reliability-cost models for the power switching devices of wind power converters

    DEFF Research Database (Denmark)

    Ma, Ke; Blaabjerg, Frede

    2012-01-01

    In order to satisfy the growing reliability requirements for the wind power converters with more cost-effective solution, the target of this paper is to establish a new reliability-cost model which can connect the relationship between reliability performances and corresponding semiconductor cost...... temperature mean value Tm and fluctuation amplitude ΔTj of power devices, are presented. With the proposed reliability-cost model, it is possible to enable future reliability-oriented design of the power switching devices for wind power converters, and also an evaluation benchmark for different wind power...... for power switching devices. First the conduction loss, switching loss as well as thermal impedance models of power switching devices (IGBT module) are related to the semiconductor chip number information respectively. Afterwards simplified analytical solutions, which can directly extract the junction...

  10. Self-consistent modelling of electrochemical strain microscopy in mixed ionic-electronic conductors: Nonlinear and dynamic regimes

    Science.gov (United States)

    Varenyk, O. V.; Silibin, M. V.; Kiselev, D. A.; Eliseev, E. A.; Kalinin, S. V.; Morozovska, A. N.

    2015-08-01

    The frequency dependent Electrochemical Strain Microscopy (ESM) response of mixed ionic-electronic conductors is analyzed within the framework of Fermi-Dirac statistics and the Vegard law, accounting for steric effects from mobile donors. The emergence of dynamic charge waves and nonlinear deformation of the surface in response to bias applied to the tip-surface junction is numerically explored. The 2D maps of the strain and concentration distributions across the mixed ionic-electronic conductor and bias-induced surface displacements are calculated. The obtained numerical results can be applied to quantify the ESM response of Li-based solid electrolytes, materials with resistive switching, and electroactive ferroelectric polymers, which are of potential interest for flexible and high-density non-volatile memory devices.

  11. Self-consistent modelling of electrochemical strain microscopy in mixed ionic-electronic conductors: Nonlinear and dynamic regimes

    Energy Technology Data Exchange (ETDEWEB)

    Varenyk, O. V.; Morozovska, A. N., E-mail: sergei2@ornl.gov, E-mail: anna.n.morozovska@gmail.com [Institute of Physics, National Academy of Sciences of Ukraine, 46, pr. Nauky, 03028 Kyiv (Ukraine); Silibin, M. V. [National Research University of Electronic Technology “MIET,” 124498 Moscow (Russian Federation); Kiselev, D. A. [National University of Science and Technology “MISiS,” 119049 Moscow, Leninskiy pr. 4 (Russian Federation); Eliseev, E. A. [Institute for Problems of Materials Science, NAS of Ukraine, Krjijanovskogo 3, 03142 Kyiv (Ukraine); Kalinin, S. V., E-mail: sergei2@ornl.gov, E-mail: anna.n.morozovska@gmail.com [The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-08-21

    The frequency dependent Electrochemical Strain Microscopy (ESM) response of mixed ionic-electronic conductors is analyzed within the framework of Fermi-Dirac statistics and the Vegard law, accounting for steric effects from mobile donors. The emergence of dynamic charge waves and nonlinear deformation of the surface in response to bias applied to the tip-surface junction is numerically explored. The 2D maps of the strain and concentration distributions across the mixed ionic-electronic conductor and bias-induced surface displacements are calculated. The obtained numerical results can be applied to quantify the ESM response of Li-based solid electrolytes, materials with resistive switching, and electroactive ferroelectric polymers, which are of potential interest for flexible and high-density non-volatile memory devices.

  12. Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

    International Nuclear Information System (INIS)

    Whitcher, T J; Woon, K L; Wong, W S; Chanlek, N; Nakajima, H; Saisopa, T; Songsiriritthigul, P

    2016-01-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current–voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK–Al interface. (paper)

  13. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    Science.gov (United States)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  14. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Mengseng [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Zhang, Kailiang, E-mail: kailiang_zhang@163.com [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Yang, Ruixia, E-mail: yangrx@hebut.edu.cn [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); Wang, Fang; Zhang, Zhichao; Wu, Shijian [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China)

    2017-07-15

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  15. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    International Nuclear Information System (INIS)

    Xia, Mengseng; Zhang, Kailiang; Yang, Ruixia; Wang, Fang; Zhang, Zhichao; Wu, Shijian

    2017-01-01

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  16. Materials growth and characterization of thermoelectric and resistive switching devices

    Science.gov (United States)

    Norris, Kate J.

    In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

  17. Stabilization of metal-oxide bulk switching device with diffused Bi contacts

    International Nuclear Information System (INIS)

    Lalevic, B.; Shoga, M.; Gvishi, M.; Levy, S.; Army ERADCOM, Ft. Monmouth, NJ)

    1979-01-01

    Threshold switching from the high to low resistance state has been investigated in the polycrystalline and single crystal NbO/sub x/ (where x is approximately = 2) metal-oxide devices. Stable and reproducible switching performance is observed in a configuration Bi-NbO 2 -Bi where Bi electrodes were covered with Au films. Improvement in the device performance is attributed to the Bi diffusion into NbO/sub x/ which has been confirmed by the Auger electron spectroscopy. Typical off state resistance of these devices is approx.100 KΩ and threshold switching voltage in the range from 100 to 2500 V. The delay time tau/sub d/ is exponentially dependent on the applied voltage V/sub appl/ and at larger V/sub appl'/ the delay time is less than a nanosecond. Recovery time of a device is approx.0.5 μsec as determined by the method of decreasing time interval between two successive pulses. Holding voltage is approx.40 V. The pulsed switched devices can withstand pulse durations between 0.1 to 3 μsec, repetition rate of 100 C/s and current intensities of 10 to 15 A, or 25 A peak with the applied pulse duration of 20 μsec, single shot

  18. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    Science.gov (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  19. 3-5 modulation and switching devices for optical systems applications

    Science.gov (United States)

    Singh, Jasprit; Bhattacharya, Pallab

    1995-04-01

    The thrust for this three year program has been to develop novel devices and systems applications for multiple quantum well based devices. We have investigated architectures based upon the quantum confined Stark effect (QCSE), a means by which excitonic resonances in a quantum well are electric field tuned to shift the peaked absorption spectrum of the material. The devices based upon this concept have been used, in the past, to realize switching structures employing the characteristic negative differential resistance available in PIN-MQW diodes under illumination. We have focuses, primarily on three schemes based upon the QCSE, to extend the utility of quantum well based devices. Firstly, we have developed, tested and optimized a novel tunable optical filter for wavelength selective applications. Secondly, we have demonstrated an MQW based scheme for optical pattern recognition which we have applied towards header recognition in a packet switching network environment. Thirdly, we have extended previous MQW based switching schemes to implement an optical read only memory (ROM) which can store two bits of information on a single sight, read by two different probe wavelengths of light.

  20. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  1. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

  2. Improvement in the heat transfer of a gas filled thermal switch

    International Nuclear Information System (INIS)

    Yamamoto, J.

    1984-01-01

    This chapter attempts to clarify the heat transfer mechanism of a gas filled stainless steel tube, and shows how the maximum heat transfer rate is determined under various filling pressures. The thermal switch is a convenient device for a thermal link between the cold heat of a cryocooler and a magnet dewar, because the switch acts as an active thermal conductor at the precooling stage and as an insulator after collecting liquid helium in the dewar. Topics considered include the switch structure, the heat transfer process, the delay of condensation, and the precooling stage and switching. It is determined that the heat transfer mechanism of the gas filled switch is due to normal nucleate boiling at the bottom and condensation on the upper cone. The higher the initial pressure, the larger the maximum heat flow obtained. Evaporation and condensation surfaces play an important role in the heat transfer rate

  3. A “Swingable” straight-chain affinity molecule immobilized on a semi-conductor electrode for photo-excited current-based molecular sensing

    International Nuclear Information System (INIS)

    Takatsuji, Yoshiyuki; Wakabayashi, Ryo; Sakakura, Tatsuya; Haruyama, Tetsuya

    2015-01-01

    The molecular affinities of biomolecules have found applications in the areas of clinical diagnostics, drug discovery, as well as allied fields of study. An affinity sensor is a unique in situ assay tool, which is valuable and convenient in practical situations. In this study, we designed a photo-excitable molecular interface with an affinity domain and fabricated with a “swingable” straight-chain affinity molecule immobilized on a semi-conductor electrode (SCE). The straight-chain affinity molecule possessed a photo-excitable dye at one end and was bound to the SCE surface at the other by the EC tag method, which was developed previously. A straight-chain molecule is too long to transfer electrons from the photo-excited dye to the conduction band of the SCE. However, the straight-chain molecule was designed with a “swing” structure, which made the transfer of electrons possible. The central region of the chain molecule has an affinity to the activated estrogen receptor (ER). When the activated ER bound to the affinity region, the molecular lost its swingable function, the electron transfer from the photo-excited dye to the SCE was consequently suppressed. Based on the unique swingable molecular interface, the affinity sensor can be used to determine the in situ concentration of endocrine disrupter ESTROGEN (17β-estradiol) at concentrations ranging from 2 to 10 nM with very good reproducibility. The superior assay reproducibility is responsible for the success of the EC tag method, which is a quantitative method for immobilizing molecules on SCE.

  4. Studies of switching structures in ferroelectric liquid crystal devices

    International Nuclear Information System (INIS)

    Pabla, D.S.

    1998-01-01

    The fast, bistable electro-optic response of ferroelectric liquid crystal (FLC) devices has made them prime candidates for use in display applications. However, before these applications can become widely commercially viable a number of key issues relating to the switching within these devices need to be addressed. One of these is related to the fact that while there has been much work done on modelling the switching process in FLC devices, with some moderate success, in the main these models have not accurately accounted for the physical processes taking place. In order to rectify this situation we present a simple, multi-variable approach which includes important physical phenomenon such as stressed states, partial and domain switching. Through using this model we learn more about the dynamic molecular profiles which may exist in devices, and use this as a springboard to undertake a comprehensive theoretical and experimental study of the molecular profiles of chevron structures under different types of addressing pulses and voltages. This entails modelling the dynamic profiles using a simple non flow reorientation theory and comparing these simulations directly with experimental data obtained through the use of two different optical characterisation techniques. Our findings show quite conclusively that for monopolar addressing within low and high voltage regimes and for low voltage bipolar pulses during the early stages of switching, the dynamic reorientation near the surfaces and central regions of the device lags the reorientation within the bulk. The reverse however being true for the high voltage bipolar addressing case. These results for chevron structures differ from previous theoretical predictions made by others using equations derived from the flow coupled chiral smectic C continuum theory. These flow coupled simulations however, refer to reorientation in bookshelf structures rather than the chevron type structures thought to exist in FLC devices. As

  5. Studies of switching structures in ferroelectric liquid crystal devices

    Energy Technology Data Exchange (ETDEWEB)

    Pabla, D.S

    1998-07-01

    The fast, bistable electro-optic response of ferroelectric liquid crystal (FLC) devices has made them prime candidates for use in display applications. However, before these applications can become widely commercially viable a number of key issues relating to the switching within these devices need to be addressed. One of these is related to the fact that while there has been much work done on modelling the switching process in FLC devices, with some moderate success, in the main these models have not accurately accounted for the physical processes taking place. In order to rectify this situation we present a simple, multi-variable approach which includes important physical phenomenon such as stressed states, partial and domain switching. Through using this model we learn more about the dynamic molecular profiles which may exist in devices, and use this as a springboard to undertake a comprehensive theoretical and experimental study of the molecular profiles of chevron structures under different types of addressing pulses and voltages. This entails modelling the dynamic profiles using a simple non flow reorientation theory and comparing these simulations directly with experimental data obtained through the use of two different optical characterisation techniques. Our findings show quite conclusively that for monopolar addressing within low and high voltage regimes and for low voltage bipolar pulses during the early stages of switching, the dynamic reorientation near the surfaces and central regions of the device lags the reorientation within the bulk. The reverse however being true for the high voltage bipolar addressing case. These results for chevron structures differ from previous theoretical predictions made by others using equations derived from the flow coupled chiral smectic C continuum theory. These flow coupled simulations however, refer to reorientation in bookshelf structures rather than the chevron type structures thought to exist in FLC devices. As

  6. High-explosive driven crowbar switch

    International Nuclear Information System (INIS)

    Dike, R.S.; Kewish, R.W. Jr.

    1976-01-01

    The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor

  7. The improvement of all-solid-state electrochromic devices fabricated with the reactive sputter and cathodic arc technology

    Directory of Open Access Journals (Sweden)

    Min-Chuan Wang

    2016-11-01

    Full Text Available The all-solid-state electrochromic device (ECD with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS and cathodic vacuum arc plasma (CVAP technology has been developed for smart electrochromic (EC glass application. The EC layer and ion conductor layer were deposited by reactive DCMS and CVAP technology, respectively. The ion conductor layer Ta2O5 deposited by the CVAP technology has provided the better porous material structure for ion transportation and showed 1.76 times ion conductivity than devices with all sputtering process. At the same time, the EC layer WO3 and NiO deposited by the reactive DCMS have also provided the high quality and uniform characteristic to overcome the surface roughness effect of the CVAP ion conductor layer in multilayer device structure. The all-solid-state ECD with the CVAP ion conductor layer has demonstrated a maximum transmittance variation (ΔT of 55% at 550nm and a faster-switching speed. Furthermore, the lower equipment cost and higher deposition rate could be achieved by the application of CVAP technology.

  8. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Science.gov (United States)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  9. Impacts of Co doping on ZnO transparent switching memory device characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Simanjuntak, Firman Mangasa; Wei, Kung-Hwa [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Prasad, Om Kumar [Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Panda, Debashis [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Lin, Chun-An; Tsai, Tsung-Ling; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-05-02

    The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  10. Compact integrated optical devices for optical sensor and switching applications

    NARCIS (Netherlands)

    Kauppinen, L.J.

    2010-01-01

    This thesis describes the design, fabrication, and characterization of compact optical devices for sensing and switching applications. Our focus has been to realize the devices using CMOS-compatible fabrication processes. Particularly the silicon photonics fabrication platform, ePIXfab, has been

  11. Semi-conductor switches

    International Nuclear Information System (INIS)

    1981-01-01

    Methods are described of improving certain electrical characteristics of bidirectional thyristors by selective irradiation of the boundary region between current-carrying portions of the device. Irradiation, preferably by electrons but also by neutrons, gamma radiation or protons, causes carrier lifetime reducing lattice defects. (U.K.)

  12. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    International Nuclear Information System (INIS)

    Borgatti, F.; Torelli, P.; Panaccione, G.

    2016-01-01

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  13. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

    2016-04-15

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  14. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  15. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    Science.gov (United States)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  16. Color-tunable electrophosphorescent device fabricated by a photo-bleaching method

    International Nuclear Information System (INIS)

    Kim, Tae-Ho; Park, Jong Hyeok; Park, O Ok

    2011-01-01

    We demonstrated an efficient color-tunable electrophosphorescent device fabricated by a photo-bleaching method. Electroluminescence studies indicate that excellent device performance can be achieved through efficient Foerster energy transfer from the conjugated polymer to the iridium complexes by improving their miscibility. The use of a very low concentration of red phosphorescent dye and the easy degradation characteristics of conjugated structure of the red dopant enable color-tuning from red to green emission by a simple UV-irradiation process without a sacrifice of luminescent properties.tp

  17. EXPERIMENTAL VERIFICATION OF COMPUTER MODEL OF COOLING SYSTEM FOR POWERFUL SEMI- CONDUCTOR DEVICE

    Directory of Open Access Journals (Sweden)

    I. A. Khorunzhii

    2007-01-01

    Full Text Available A cooling system for powerful semi-conductor device (power -1 kW consisting of a pin-type radiator and a body is considered in the paper. Cooling is carried out by forced convection of a coolant. Calculated values of temperatures on the radiator surface and experimentally measured values of temperatures in the same surface points have been compared in the paper. It has been shown that the difference between calculated and experimentally measured temperatures does not exceed 0,1-0,2 °C and it is comparable with experimental error value. The given results confirm correctness of a computer model.

  18. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  19. Low inductance power electronics assembly

    Science.gov (United States)

    Herron, Nicholas Hayden; Mann, Brooks S.; Korich, Mark D.; Chou, Cindy; Tang, David; Carlson, Douglas S.; Barry, Alan L.

    2012-10-02

    A power electronics assembly is provided. A first support member includes a first plurality of conductors. A first plurality of power switching devices are coupled to the first support member. A first capacitor is coupled to the first support member. A second support member includes a second plurality of conductors. A second plurality of power switching devices are coupled to the second support member. A second capacitor is coupled to the second support member. The first and second pluralities of conductors, the first and second pluralities of power switching devices, and the first and second capacitors are electrically connected such that the first plurality of power switching devices is connected in parallel with the first capacitor and the second capacitor and the second plurality of power switching devices is connected in parallel with the second capacitor and the first capacitor.

  20. IGBT Dynamic Loss Reduction through Device Level Soft Switching

    Directory of Open Access Journals (Sweden)

    Lan Ma

    2018-05-01

    Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

  1. Interrupter and hybrid-switch testing for fusion devices

    International Nuclear Information System (INIS)

    Parsons, W.M.; Warren, R.W.; Honig, E.M.; Lindsay, J.D.G.; Bellamo, P.; Cassel, R.L.

    1979-01-01

    This paper discusses recent and ongoing switch testing for fusion devices. The first part describes testing for the TFTR ohmic-heating circuit. In this set of tests, which simulated the stresses produced during a plasma initiation pulse, circuit breakers were required to interrupt a current of 24 kA with an associated recovery voltage of 25 kV. Two interrupter systems were tested for over 1000 operations each, and both appear to satisfy TFTR requirements. The second part discusses hybrid-switch development for superconducting coil protection. These switching systems must be capable of carrying large currents on a continuous basis as well as performing interruption duties. The third part presents preliminary results on an early-counterpulse technique applied to vacuum interrupters. Implementation of this technique has resulted in large increases in interruptible current as well as a marked reduction in contact erosion

  2. Coulomb Blockade Plasmonic Switch.

    Science.gov (United States)

    Xiang, Dao; Wu, Jian; Gordon, Reuven

    2017-04-12

    Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

  3. Photo-Responsive Graphene and Carbon Nanotubes to Control and Tackle Biological Systems

    Science.gov (United States)

    Cardano, Francesca; Frasconi, Marco; Giordani, Silvia

    2018-01-01

    Photo-responsive multifunctional nanomaterials are receiving considerable attention for biological applications because of their unique properties. The functionalization of the surface of carbon nanotubes (CNTs) and graphene, among other carbon based nanomaterials, with molecular switches that exhibit reversible transformations between two or more isomers in response to different kind of external stimuli, such as electromagnetic radiation, temperature and pH, has allowed the control of the optical and electrical properties of the nanomaterial. Light-controlled molecular switches, such as azobenzene and spiropyran, have attracted a lot of attention for nanomaterial's functionalization because of the remote modulation of their physicochemical properties using light stimulus. The enhanced properties of the hybrid materials obtained from the coupling of carbon based nanomaterials with light-responsive switches has enabled the fabrication of smart devices for various biological applications, including drug delivery, bioimaging and nanobiosensors. In this review, we highlight the properties of photo-responsive carbon nanomaterials obtained by the conjugation of CNTs and graphene with azobenzenes and spiropyrans molecules to investigate biological systems, devising possible future directions in the field. PMID:29707534

  4. Photo-Responsive Graphene and Carbon Nanotubes to Control and Tackle Biological Systems

    Science.gov (United States)

    Cardano, Francesca; Frasconi, Marco; Giordani, Silvia

    2018-04-01

    Photo-responsive multifunctional nanomaterials are receiving considerable attention for biological applications because of their unique properties. The functionalization of the surface of carbon nanotubes (CNTs) and graphene, among other carbon based nanomaterials, with molecular switches that exhibit reversible transformations between two or more isomers in response to different kind of external stimuli, such as electromagnetic radiation, temperature and pH, has allowed the control of the optical and electrical properties of the nanomaterial. Light-controlled molecular switches, such as azobenzene and spiropyran, have attracted a lot of attention for nanomaterial’s functionalization because of the remote modulation of their physicochemical properties using light stimulus. The enhanced properties of the hybrid materials obtained from the coupling of carbon based nanomaterials with light-responsive switches has enabled the fabrication of smart devices for various biological applications, including drug delivery, bioimaging and nanobiosensors. In this review, we highlight the properties of photo-responsive carbon nanomaterials obtained by the conjugation of CNTs and graphene with azobenzenes and spiropyrans molecules to investigate biological systems, devising possible future directions in the field.

  5. 49 CFR 232.407 - Operations requiring use of two-way end-of-train devices; prohibition on purchase of...

    Science.gov (United States)

    2010-10-01

    ... a secondary, fully independent braking system capable of safely stopping the train in the event of... either by using the manual toggle switch or through automatic activation, whenever it becomes necessary... automatic brake valve or the conductor's emergency brake valve. (g) En route failure of device on a freight...

  6. Electrohydrodynamic direct—writing of conductor—insulator-conductor multi-layer interconnection

    International Nuclear Information System (INIS)

    Zheng Gao-Feng; Pei Yan-Bo; Wang Xiang; Zheng Jian-Yi; Sun Dao-Heng

    2014-01-01

    A multi-layer interconnection structure is a basic component of electronic devices, and printing of the multi-layer interconnection structure is the key process in printed electronics. In this work, electrohydrodynamic direct-writing (EDW) is utilized to print the conductor—insulator—conductor multi-layer interconnection structure. Silver ink is chosen to print the conductor pattern, and a polyvinylpyrrolidone (PVP) solution is utilized to fabricate the insulator layer between the bottom and top conductor patterns. The influences of EDW process parameters on the line width of the printed conductor and insulator patterns are studied systematically. The obtained results show that the line width of the printed structure increases with the increase of the flow rate, but decreases with the increase of applied voltage and PVP content in the solution. The average resistivity values of the bottom and top silver conductor tracks are determined to be 1.34 × 10 −7 Ω·m and 1.39 × 10 −7 Ω·m, respectively. The printed PVP layer between the two conductor tracks is well insulated, which can meet the insulation requirement of the electronic devices. This study offers an alternative, fast, and cost-effective method of fabricating conductor—insulator—conductor multi-layer interconnections in the electronic industry

  7. Control of Radioactive Lightning-Conductor

    International Nuclear Information System (INIS)

    Esposito, E.

    2004-01-01

    The radioactive lightning-conductor production in Brazil was started in 1970 and after a period of 19 years of commercialization of these devices, the National Nuclear Energy Commission (CNEN), based in studies done in Brazil and abroad, proved that the radioactive lightning-conductor performance wasn't superior to the conventional one, so the use of radioactive source is not justified. Thence, the authorization for its production was suspended and the installation of this type of lightning-conductor was forbidden. The radioactive material that results from the dismount of these devices must be immediately sent to CNEN, for treatment and temporary storage. After this prohibition and its publication in several specialized magazines, CNEN was searched for several institutions, factories, churches, etc, interested in obtaining information about the handling and shipment procedures of radioactive lightning-conductors that are inoperative and that must be sent to CNEN's Institutes, in a correct and secure form. From this moment CNEN technicians realize that the owners of radioactive lightning-conductors didn't have any knowledge and training in radiation protection, neither in equipment to monitoring the radiation. The radioactive material from these sources is, in almost all cases, the radioisotope 241Am which has a maximum activity of an order of 5 mCi (1,85 x 10-2 TBq); as the radiation emitted by 241Am is of alpha type, whose range in the air, is just few centimeters and the gamma rays are of low energy, an irradiation offer small risk. However, there is a contamination risk on someone hands, by the contact with the source. Aiming to attend, in an objective way, the users' interests in obtaining some pertinent technical information about the shipping of radioactive lightning-conductor that is inoperative or is being replaced and also to optimize its receipt in CNEN's Institutes, because there still has a great number of these lightning-conductors installed and still

  8. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong; Du, Yuanmin; Li, Yingtao; Zhu, Bowen; Leow, Wan Ru; Li, Yuangang; Pan, Jisheng; Wu, Tao; Chen, Xiaodong

    2015-01-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable

  9. The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

    Science.gov (United States)

    Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

    2018-03-01

    We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

  10. Electrostatic MEMS devices with high reliability

    Science.gov (United States)

    Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

    2015-02-24

    The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

  11. Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization

    International Nuclear Information System (INIS)

    Surawanitkun, C.; Kaewrawang, A.; Siritaratiwat, A.; Kruesubthaworn, A.; Sivaratana, R.; Jutong, N.; Mewes, C.K.A.; Mewes, T.

    2015-01-01

    For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect

  12. Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

    International Nuclear Information System (INIS)

    Kim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang; Lee, Daeseok; Woo, Jiyong; Choi, Godeuni

    2012-01-01

    In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H + and mobile hydroxyl (OH − ) ions are generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal–oxide-based resistive-switching random access memory devices. (paper)

  13. Optically controlled multiple switching operations of DNA biopolymer devices

    International Nuclear Information System (INIS)

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

    2015-01-01

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices

  14. Optically controlled multiple switching operations of DNA biopolymer devices

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu [Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Fruk, Ljiljana [Department of Chemical Engineering and Biotechnology, University of Cambridge, Pembroke Street, Cambridge CB2 3RA (United Kingdom); Hung, Yu-Chueh, E-mail: ychung@ee.nthu.edu.tw [Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2015-12-21

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

  15. Materials and devices for all-optical helicity-dependent switching

    Science.gov (United States)

    Salah El Hadri, Mohammed; Hehn, Michel; Malinowski, Grégory; Mangin, Stéphane

    2017-04-01

    Since the first observation of ultrafast demagnetization in Ni thin films by Beaurepaire et al 20 years ago, understanding the interaction between ultrashort laser pulses and magnetization has become a topic of huge interest. In 2007, an intriguing discovery related to ultrafast demagnetization was the observation of all-optical switching (AOS) of magnetization in ferrimagnetic GdFeCo alloy films using only femtosecond laser pulses. This review discusses the recent studies elucidating several key issues regarding the all-optical switching phenomenon. Although AOS had long been restricted to GdFeCo alloys, it turned out to be a more general phenomenon for a variety of ferrimagnetic as well as ferromagnetic materials. This discovery helped pave the way for the integration of all-optical writing in data storage industries. Nevertheless, theoretical models explaining the switching in GdFeCo alloy films do not appear to apply in the other materials, thus questioning the uniqueness of the microscopic origin of all-optical switching. By investigating the integration of all-optical switching in spintronic devices, two types of all-optical switching mechanism have been distinguished: a single-pulse heat-only switching in ferrimagnetic GdFeCo alloys, and a two regime helicity-dependent switching in both ferrimagnetic TbCo alloys and ferromagnetic Co/Pt multilayers. Another key issue discussed in this review is the necessary condition for the observation of all-optical switching. Many models have been proposed but are strongly challenged by the discovery of such switching in ferromagnets. A comprehensive investigation of the magnetic parameters governing all-optical switching demonstrate that its observation requires magnetic domains larger than the laser spot size during the cooling process; such a criterion is common for both ferri- and ferro-magnets. These investigations strongly improve our understanding and give intriguing insights into the rich physics of the ultrafast

  16. Platform for efficient switching between multiple devices in the intensive care unit.

    Science.gov (United States)

    De Backere, F; Vanhove, T; Dejonghe, E; Feys, M; Herinckx, T; Vankelecom, J; Decruyenaere, J; De Turck, F

    2015-01-01

    This article is part of the Focus Theme of METHODS of Information in Medicine on "Managing Interoperability and Complexity in Health Systems". Handheld computers, such as tablets and smartphones, are becoming more and more accessible in the clinical care setting and in Intensive Care Units (ICUs). By making the most useful and appropriate data available on multiple devices and facilitate the switching between those devices, staff members can efficiently integrate them in their workflow, allowing for faster and more accurate decisions. This paper addresses the design of a platform for the efficient switching between multiple devices in the ICU. The key functionalities of the platform are the integration of the platform into the workflow of the medical staff and providing tailored and dynamic information at the point of care. The platform is designed based on a 3-tier architecture with a focus on extensibility, scalability and an optimal user experience. After identification to a device using Near Field Communication (NFC), the appropriate medical information will be shown on the selected device. The visualization of the data is adapted to the type of the device. A web-centric approach was used to enable extensibility and portability. A prototype of the platform was thoroughly evaluated. The scalability, performance and user experience were evaluated. Performance tests show that the response time of the system scales linearly with the amount of data. Measurements with up to 20 devices have shown no performance loss due to the concurrent use of multiple devices. The platform provides a scalable and responsive solution to enable the efficient switching between multiple devices. Due to the web-centric approach new devices can easily be integrated. The performance and scalability of the platform have been evaluated and it was shown that the response time and scalability of the platform was within an acceptable range.

  17. High-temperature superconducting conductors and cables

    International Nuclear Information System (INIS)

    Peterson, D.E.; Maley, M.P.; Boulaevskii, L.; Willis, J.O.; Coulter, J.Y.; Ullmann, J.L.; Cho, Jin; Fleshler, S.

    1996-01-01

    This is the final report of a 3-year LDRD project at LANL. High-temperature superconductivity (HTS) promises more efficient and powerful electrical devices such as motors, generators, and power transmission cables; however this depends on developing HTS conductors that sustain high current densities J c in high magnetic fields at temperatures near liq. N2's bp. Our early work concentrated on Cu oxides but at present, long wire and tape conductors can be best made from BSCCO compounds with high J c at low temperatures, but which are degraded severely at temperatures of interest. This problem is associated with thermally activated motion of magnetic flux lines in BSCCO. Reducing these dc losses at higher temperatures will require a high density of microscopic defects that will pin flux lines and inhibit their motion. Recently it was shown that optimum defects can be produced by small tracks formed by passage of energetic heavy ions. Such defects result when Bi is bombarded with high energy protons. The longer range of protons in matter suggests the possibility of application to tape conductors. AC losses are a major limitation in many applications of superconductivity such as power transmission. The improved pinning of flux lines reduces ac losses, but optimization also involves other factors. Measuring and characterizing these losses with respect to material parameters and conductor design is essential to successful development of ac devices

  18. Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Masatoshi; Okabe, Kyota [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Kimura, Takashi [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

    2016-01-11

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

  19. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong

    2015-05-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Influence of Nitrogen Doping on Device Operation for TiO2-Based Solid-State Dye-Sensitized Solar Cells: Photo-Physics from Materials to Devices

    Directory of Open Access Journals (Sweden)

    Jin Wang

    2016-02-01

    Full Text Available Solid-state dye-sensitized solar cells (ssDSSC constitute a major approach to photovoltaic energy conversion with efficiencies over 8% reported thanks to the rational design of efficient porous metal oxide electrodes, organic chromophores, and hole transporters. Among the various strategies used to push the performance ahead, doping of the nanocrystalline titanium dioxide (TiO2 electrode is regularly proposed to extend the photo-activity of the materials into the visible range. However, although various beneficial effects for device performance have been observed in the literature, they remain strongly dependent on the method used for the production of the metal oxide, and the influence of nitrogen atoms on charge kinetics remains unclear. To shed light on this open question, we synthesized a set of N-doped TiO2 nanopowders with various nitrogen contents, and exploited them for the fabrication of ssDSSC. Particularly, we carefully analyzed the localization of the dopants using X-ray photo-electron spectroscopy (XPS and monitored their influence on the photo-induced charge kinetics probed both at the material and device levels. We demonstrate a strong correlation between the kinetics of photo-induced charge carriers probed both at the level of the nanopowders and at the level of working solar cells, illustrating a direct transposition of the photo-physic properties from materials to devices.

  1. Potential negative consequences of non-consented switch of inhaled medications and devices in asthma patients.

    Science.gov (United States)

    Björnsdóttir, U S; Gizurarson, S; Sabale, U

    2013-09-01

    Asthma requires individually tailored and careful management to control and prevent symptoms and exacerbations. Selection of the most appropriate treatment is dependent on both the choice of drugs and inhaler device; however, financial pressures may result in patients being switched to alternative medications and devices in an attempt to reduce costs. This review aimed to examine the published literature in order to ascertain whether switching a patient's asthma medications or device negatively impacts clinical and economic outcomes. A literature search of MEDLINE (2001-13 September 2011) was conducted to identify English-language articles focused on the direct impact of switching medications and inhaler devices and switching from fixed-dose combination to monocomponent therapy via separate inhalers in patients with asthma; the indirect impacts of switching were also assessed. Evidence showed that non-consented switching of medications and inhalers in patients with asthma can be associated with a range of negative outcomes, at both individual and organisational levels. Factors that reduce adherence may lead to compromised symptom control resulting in increased healthcare resource utilisation and poorer patient quality of life. The consequences of a non-consented switch should be weighed carefully against arguments supporting an inhaler switch without the patient's consent for non-medical/budgetary reasons, such as potential reductions in initial acquisition costs, which may be associated with subsequent additional healthcare needs. Given the increasing pressure for reduced costs and efficient allocation of limited healthcare resources, an additional investment in ensuring high medication adherence may lead to greater savings due to a potentially decreased demand for healthcare services. In contrast, savings achieved in acquisition costs may result in a greater net loss due to increased healthcare consumption caused by decreased asthma control. © 2013 The Authors

  2. Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

    Science.gov (United States)

    Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

    2018-02-01

    In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

  3. Chemical Detection Based on Adsorption-Induced and Photo-Induced Stresses in MEMS Devices

    Energy Technology Data Exchange (ETDEWEB)

    Datskos, P.G.

    1999-04-05

    Recently there has been an increasing demand to perform real-time in-situ chemical detection of hazardous materials, contraband chemicals, and explosive chemicals. Currently, real-time chemical detection requires rather large analytical instrumentation that are expensive and complicated to use. The advent of inexpensive mass produced MEMS (micro-electromechanical systems) devices opened-up new possibilities for chemical detection. For example, microcantilevers were found to respond to chemical stimuli by undergoing changes in their bending and resonance frequency even when a small number of molecules adsorb on their surface. In our present studies, we extended this concept by studying changes in both the adsorption-induced stress and photo-induced stress as target chemicals adsorb on the surface of microcantilevers. For example, microcantilevers that have adsorbed molecules will undergo photo-induced bending that depends on the number of absorbed molecules on the surface. However, microcantilevers that have undergone photo-induced bending will adsorb molecules on their surfaces in a distinctly different way. Depending on the photon wavelength and microcantilever material, the microcantilever can be made to bend by expanding or contracting the irradiated surface. This is important in cases where the photo-induced stresses can be used to counter any adsorption-induced stresses and increase the dynamic range. Coating the surface of the microstructure with a different material can provide chemical specificity for the target chemicals. However, by selecting appropriate photon wavelengths we can change the chemical selectivity due to the introduction of new surface states in the MEMS device. We will present and discuss our results on the use of adsorption-induced and photo-induced bending of microcantilevers for chemical detection.

  4. Development of YBCO tape conductor fabrication technology

    Energy Technology Data Exchange (ETDEWEB)

    Hong, G W; Kim, C J; Lee, H G. and others

    2001-08-01

    Superconductor when fabricated into wire shape is applied for developing electric power transmission cable, transformer, generator and SMES. Such superconducting power devices are capable of maximizing the efficiency of electricity and are anticipated to contribute for solving the energy problem of humankind. Furthermore the high temperature oxide superconductor developed in late 1980s is superconducting above boiling temperature of liquid nitrogen temperature has strong potential to realize superconducting power device and a lot of researches are being done in this field. Superconducting wire is the most important core material for developing superconducting power device and thermo-mechanical powder in tube process was developed to fabricated Ag/Bi-2223 conductor in long length having high critical current carrying capacity. Several companies fabricate and sell Ag/Bi-2223 superconducting wire longer than km length and used for developed electrical power device. But because of its inherent property of sharp decrease in current carrying capacity when applying high magnetic field, the application of Bi-2223 sire is limited as low as 20 K when the power device is in operating under high magnetic field. The YBCO tape conductor has the advantages of maintaining high critical current applying high magnetic field and can be used to most of the power device without special limitation. The metal substrate having good crystallographic texture and deposition technique which can deposit the good quality superconducting thin film continuously in large area are need to fabricate coated conductor, and this technique can be applied to develop the superconducting current limiter or magnetic field shielding device. A superconducting wire for using in high magnetic field is play a critical role in developing maglev, MRI, SMES, transformer, generator and motor and the continuous film deposition technique can be applied in other industry very much.

  5. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    International Nuclear Information System (INIS)

    Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin

    2011-01-01

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

  6. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  7. Verification of the short-circuit current making capability of high-voltage switching devices

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2001-01-01

    Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

  8. Guanidinium nonaflate as a solid-state proton conductor

    DEFF Research Database (Denmark)

    Chen, Xiaoli; Tang, Haolin; Putzeys, Tristan

    2016-01-01

    Protic organic ionic plastic crystals (POIPCs) are a type of novel solid-state proton conductors. In this work, guanidinium nonaflate ([Gdm-H][NfO]) is reported to be a model POIPC. Its structure-property relationship has been investigated comprehensively. Infrared analysis of [Gdm-H][NfO] and its....... In addition, POIPC-based solid-state proton conductors are also expected to find applications in sensors and other electrochemical devices....

  9. Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

    Science.gov (United States)

    Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

    2018-06-01

    We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

  10. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    Science.gov (United States)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  11. All-optical switching based on optical fibre long period gratings modified bacteriorhodopsin

    Science.gov (United States)

    Korposh, S.; James, S.; Partridge, M.; Sichka, M.; Tatam, R.

    2018-05-01

    All-optical switching using an optical fibre long-period gating (LPG) modified with bacteriorhodopsin (bR) is demonstrated. The switching process is based on the photo-induced RI change of bR, which in turn changes the phase matching conditions of the mode coupling by the LPG, leading to modulation of the propagating light. The effect was studied with an LPG immersed into a bR solution and with LPGs coated with the bR films, deposited onto the LPGs using the layer-by-layer electrostatic self-assembly (LbL) method. The dependence of the all-optical switching efficiency upon the concentration of the bR solution and on the grating period of the LPG was also studied. In addition, an in-fibre Mach-Zehnder interferometer (MZI) composed of a cascaded LPG pair separated by 30 mm and modified with bR was used to enhance the wavelength range of all-optical switching. The switching wavelength is determined by the grating period of the LPG. Switching efficiencies of 16% and 35% were observed when an LPG and an MZI were immersed into bR solutions, respectively. The switching time for devices coated with bR-films was within 1 s, 10 times faster than that observed for devices immersed into bR solution.

  12. Properties and applications of perovskite proton conductors

    Directory of Open Access Journals (Sweden)

    Eduardo Caetano Camilo de Souza

    2010-09-01

    Full Text Available A brief overview is given of the main types and principles of solid-state proton conductors with perovskite structure. Their properties are summarized in terms of the defect chemistry, proton transport and chemical stability. A good understanding of these subjects allows the manufacturing of compounds with the desired electrical properties, for application in renewable and sustainable energy devices. A few trends and highlights of the scientific advances are given for some classes of protonic conductors. Recent results and future prospect about these compounds are also evaluated. The high proton conductivity of barium cerate and zirconate based electrolytes lately reported in the literature has taken these compounds to a highlight position among the most studied conductor ceramic materials.

  13. A Passive, Adaptive and Autonomous Gas Gap Heat Switch

    NARCIS (Netherlands)

    Vanapalli, Srinivas; Colijn, B.A.; Vermeer, Cristian Hendrik; Holland, Herman J.; Tirolien, T.; ter Brake, Hermanus J.M.

    2015-01-01

    We report on the development of a heat switch for autonomous temperature control of electronic components in a satellite. A heat switch can modulate when needed between roles of a good thermal conductor and a good thermal insulator. Electronic boxes on a satellite should be maintained within a

  14. Stable confinement of toroidal electron plasma in an internal conductor device Prototype-Ring Trap

    International Nuclear Information System (INIS)

    Saitoh, H.; Yoshida, Z.; Watanabe, S.

    2005-01-01

    A pure electron plasma has been produced in an internal conductor device Prototype-Ring Trap (Proto-RT). The temporal evolution of the electron plasma was investigated by the measurement of electrostatic fluctuations. Stable confinement was realized when the potential profile adjusted to match the magnetic surfaces. The confinement time varies as a function of the magnetic field strength and the neutral gas pressure, and is comparable to the diffusion time of electrons determined by the classical collisions with neutral gas. Although the addition of a toroidal magnetic field stabilized the electrostatic fluctuation of the plasma, the effects of the magnetic shear shortened the stable confinement time, possibly because of the obstacles of coil support structures

  15. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    Directory of Open Access Journals (Sweden)

    Adrian Iovan

    2012-12-01

    Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  16. Microscopic observation of zenithal bistable switching in nematic devices with different surface relief structures

    International Nuclear Information System (INIS)

    Uche, C; Elston, S J; Parry-Jones, L A

    2005-01-01

    Nematic liquid crystals have been shown to exhibit zenithal electro-optic bistability in devices containing sinusoidal and deformed sinusoidal gratings. Recently it has been shown that zenithal bistable states can also be supported at isolated edges of square gratings. In this paper, we present microscopic observations of bistability in cells containing sinusoidal gratings and long-pitch square gratings. We have also investigated a novel display based on square wells. High frame-rate video microscopy was used to obtain time-sequenced images when the devices were switched with monopolar pulses. These show that zenithal bistable switching can occur by two different processes: (i) domain growth (observed in cells containing sinusoidal gratings) and (ii) homogenous switching (observed in cells containing isolated edges

  17. Electrical switching and memory phenomena observed in redox-gradient dendrimer sandwich devices

    OpenAIRE

    Li, JianChang; Blackstock, Silas C.; Szulczewski, Greg J.

    2005-01-01

    We report on the fabrication of dendrimer sandwich devices with electrical switching and memory properties. The storage media is consisted of a redox-gradient dendrimer layer sandwiched in organic barrier thin films. The dendrimer layer acts as potential well where redox-state changes and consequent electrical transitions of the embedded dendrimer molecules are expected to be effectively triggered and retained, respectively. Experimental results indicated that electrical switching could be re...

  18. Detail of photo 7903109 stack of superconducting cables in the modulus measuring device

    CERN Multimedia

    CERN PhotoLab

    1979-01-01

    The picture shows an assembly of insulated superconducting cables of the type used in the Po dipole magnet inserted in the elastic modulus measuring device (photos 7903547X and 7903169) in order to measures its mechanical properties under azimuthal compression. See also 7903547X, 7903169, 8307552X.

  19. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    Science.gov (United States)

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  20. Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

    Science.gov (United States)

    Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

    2018-02-01

    Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

  1. Automatic limit switch system for scintillation device and method of operation

    International Nuclear Information System (INIS)

    Brunnett, C.J.; Ioannou, B.N.

    1976-01-01

    A scintillation scanner is described having an automatic limit switch system for setting the limits of travel of the radiation detection device which is carried by a scanning boom. The automatic limit switch system incorporates position responsive circuitry for developing a signal representative of the position of the boom, reference signal circuitry for developing a signal representative of a selected limit of travel of the boom, and comparator circuitry for comparng these signals in order to control the operation of a boom drive and indexing mechanism. (author)

  2. Bistable fluidic valve is electrically switched

    Science.gov (United States)

    Fiet, O.; Salvinski, R. J.

    1970-01-01

    Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.

  3. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    Science.gov (United States)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  4. Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

    Science.gov (United States)

    Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

    2013-07-01

    Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

  5. Performance comparison of hybrid resistive switching devices based on solution-processable nanocomposites

    Science.gov (United States)

    Rajan, Krishna; Roppolo, Ignazio; Bejtka, Katarzyna; Chiappone, Annalisa; Bocchini, Sergio; Perrone, Denis; Pirri, Candido Fabrizio; Ricciardi, Carlo; Chiolerio, Alessandro

    2018-06-01

    The present work compares the influence of different polymer matrices on the performance of planar asymmetric Resistive Switching Devices (RSDs) based on silver nitrate and Ionic Liquid (IL). PolyVinyliDene Fluoride-HexaFluoroPropylene (PVDF-HFP), PolyEthylene Oxide (PEO), PolyMethyl MethAcrylate (PMMA) and a blend of PVDF-HFP and PEO were used as matrices and compared. RSDs represent perhaps the most promising electron device to back the More than Moore development, and our approach through functional polymers enables low temperature processing and gives compatibility towards flexible/stretchable/wearable equipment. The switching mechanism in all the four sample families is explained by means of a filamentary conduction. A huge difference in the cyclability and the On/Off ratio is experienced when changing the active polymers and explained based on the polymer crystallinity degree and general morphology of the prepared nanocomposite. It is worth noting that all the RSDs discussed here present good switching behaviour with reasonable endurance. The current study displays one of the most cost-effective and effortless ways to produce an RSD based on solution-processable materials.

  6. Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

    Science.gov (United States)

    Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

    2017-12-01

    Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

  7. Materials, Mechanics, and Patterning Techniques for Elastomer-Based Stretchable Conductors

    Directory of Open Access Journals (Sweden)

    Xiaowei Yu

    2016-12-01

    Full Text Available Stretchable electronics represent a new generation of electronics that utilize soft, deformable elastomers as the substrate or matrix instead of the traditional rigid printed circuit boards. As the most essential component of stretchable electronics, the conductors should meet the requirements for both high conductivity and the capability to maintain conductive under large deformations such as bending, twisting, stretching, and compressing. This review summarizes recent progresses in various aspects of this fascinating and challenging area, including materials for supporting elastomers and electrical conductors, unique designs and stretching mechanics, and the subtractive and additive patterning techniques. The applications are discussed along with functional devices based on these conductors. Finally, the review is concluded with the current limitations, challenges, and future directions of stretchable conductors.

  8. Effect of Ag nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Oh, Seung-Hwan; Choi, Hye-Jung; Wang, Gun-Uk; Kim, Dong-Yu; Hwang, Hyun-Sang; Lee, Tak-Hee

    2010-01-01

    The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the current-voltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

  9. Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

    Science.gov (United States)

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

    2018-06-01

    Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

  10. Medium-voltage switching devices: State-of-the art on technical standards; Mittelspannungs-Schaltanlagen: Stand der technischen Normen

    Energy Technology Data Exchange (ETDEWEB)

    Voss, Gerhard [Ingenieurbuero IGV Elektrotechnik, Ladenburg (Germany)

    2008-11-15

    With enhanced exchange box systems many low voltage switch devices can be equipped more compact (less volume demand), cost friendly and more reliable because of advanced arc discharge safety engineering. Presented is utilization and operation in the facility managment and industrial applications in detail. In the last years operation-important standards have been revised for planners and users. So users and planners have to occupy with new standards for medium-voltage switching devices. This knowledge forms the conditions to design devices in future extensively to individual demands of the company and according to standards. (GL)

  11. Automatic Time Regulator for Switching on an Aeration Device for ...

    African Journals Online (AJOL)

    The need to aerate the pond at odd hours due to diurnal limit, save cost and human labor, necessitated the design of an automatic time regulator circuit, which controls the switching on and o of an aeration device at a pre determined and selected time interval (5mins., 10mins., 20mins., 30mins., and 40mins.) This design ...

  12. Unevenness of Sliding Surface of Overhead Rigid Conductor Lines and Method for Reducing Unevenness

    Science.gov (United States)

    Aboshi, Mitsuo; Shimizu, Masashi

    Rigid conductor lines are used in many subways, because the use of such conductor lines reduces the risk of accidents and because less space is required for their installation. However, as the unevenness of the sliding surface of the rigid conductor lines significantly influences the fluctuations in the contact force between pantographs and contact lines, it is necessary to decrease the unevenness at the construction as well as the maintenance stages. In order to investigate the installation accuracy of overhead rigid conductor lines, we have developed a device that accurately and continuously measures the unevenness of the sliding surface. By using this measuring device, we have confirmed that the unevenness of the sliding surface depends on various factors such as the sag between the support points, the deformation of the aluminum base or the conductive rail in the case of a long wavelength, the slight sagging unevenness between the bolts of the long ear, the undulating wear etc. This paper describes the actual unevenness conditions and the technical methods for decreasing the unevenness of the sliding surface of overhead rigid conductor lines.

  13. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  14. Fabrication and Photo-Detecting Performance of 2D ZnO Inverse Opal Films

    Directory of Open Access Journals (Sweden)

    Xin Lin

    2016-09-01

    Full Text Available Two-dimensional (2D ZnO inverse opal (IO films were fabricated by co-assembly of sacrificed polystyrene (PS microspheres and citric acid/zinc acetate (CA/ZA aqueous solution at an oil–water interface followed by calcination. Their morphologies could be controlled by the surface property of polymer templates and CA/ZA molar ratio. Moreover, photo-detecting devices based on such films were constructed, which showed high photocurrent (up to 4.6 μA, excellent spectral selectivity, and reversible response to optical switch.

  15. Elastically stretchable thin film conductors on an elastomeric substrate

    Science.gov (United States)

    Jones Harris, Joyelle Elizabeth

    Imagine a large, flat screen television that can be rolled into a small cylinder after purchase in the store and then unrolled and mounted onto the wall of a home. The electronic devices within the television must be able to withstand large deformation and tensile strain. Consider a robot that is covered with an electronic skin that simulates human skin. The skin would enable the machine to lift an elderly person with care and sensitivity. The skin will endure repeated deformation with the highest tensile strains being experienced at the robot's joints. These applications and many others will benefit from stretchable electronic circuitry. While several different methods have been employed to create stretchable electronics, all methods use a common tool -- stretchable conductors. Therefore, the goal of this thesis work was to fabricate elastically stretchable conductors that can be used in stretchable electronics. We deposited Au thin films on an elastomeric substrate, and the resulting conductors remained electrically continuous when stretched by 30% and more. We developed photolithographic processes that can be used to pattern elastically stretchable conductors with a 10 mum resolution. We fabricated bi-level stretchable conductors that are separated by an elastomeric insulator and are electrically connected through via holes in the insulator. We applied our bi-level conductors to create a stretchable resistor-inductor-capacitor (RLC) circuit with a tunable resonant frequency. We also used stretchable conductors to measure action potentials in biological samples. This thesis describes the fabrication and application of our elastically stretchable conductors.

  16. Using temperature-switching approach to evaluate the ELDRS of bipolar devices

    Science.gov (United States)

    Li, Xiaolong; Lu, Wu; Wang, Xin; Guo, Qi; Yu, Xin; He, Chengfa; Sun, Jing; Liu, Mohan; Yao, Shuai; Wei, Xinyu

    2017-12-01

    Enhanced low-dose rate sensitivity (ELDRS) exhibited at low-dose rates (LDRs) by most bipolar devices is considered as one of the main concerns for spacecraft reliability. In this work, a time-saving and conservative approach - temperature-switching approach (TSA) - to simulate the ELDRS of bipolar devices is presented. Good agreement is observed between the predictive curve obtained with the TSA and the LDR data, and TSA provides us with a new insight into the test technique for ELDRS. Additionally, the mechanisms of TSA are analyzed in this paper.

  17. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  18. Fabrication of Nano-Crossbar Resistive Switching Memory Based on the Copper-Tantalum Pentoxide-Platinum Device Structure

    Science.gov (United States)

    Olga Gneri, Paula; Jardim, Marcos

    Resistive switching memory has been of interest lately not only for its simple metal-insulator-metal (MIM) structure but also for its promising ease of scalability an integration into current CMOS technologies like the Field Programmable Gate Arrays and other non-volatile memory applications. There are several resistive switching MIM combinations but under this scope of research, attention will be paid to the bipolar resistive switching characteristics and fabrication of Tantalum Pentaoxide sandwiched between platinum and copper. By changing the polarity of the voltage bias, this metal-insulator-metal (MIM) device can be switched between a high resistive state (OFF) and low resistive state (ON). The change in states is induced by an electrochemical metallization process, which causes a formation or dissolution of Cu metal filamentary paths in the Tantalum Pentaoxide insulator. There is very little thorough experimental information about the Cu-Ta 2O5-Pt switching characteristics when scaled to nanometer dimensions. In this light, the MIM structure was fabricated in a two-dimensional crossbar format. Also, with the limited available resources, a multi-spacer technique was formulated to localize the active device area in this MIM configuration to less than 20nm. This step is important in understanding the switching characteristics and reliability of this structure when scaled to nanometer dimensions.

  19. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  20. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

    Directory of Open Access Journals (Sweden)

    Ke Ma

    2012-07-01

    Full Text Available Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because of significant deviation in the packaging structure, electrical characteristics, as well as thermal impedance, these available power switching devices may have various thermal cycling behaviors, which will lead to converter solutions with very different cost, size and reliability performance. As a result, this paper aimed to investigate the thermal related characteristics of some important power switching devices. Their impact on the thermal cycling of a 10 MW three-level Neutral-Point-Clamped wind power converter is then evaluated under various operating conditions; the main focus will be on the grid connected inverter. It is concluded that the thermal performances of the 3L-NPC wind power converter can be significantly changed by the power device technology as well as their parallel configurations.

  1. Bistable switching in supercritical n+-n-n+GaAs transferred electron devices

    DEFF Research Database (Denmark)

    Jøndrup, Peter; Jeppesen, Palle; Jeppson, Bert

    1976-01-01

    : 1) cathode-triggered traveling domain; 2) cathode-triggered accumulation layer; 3) anode-triggered domain. Relative current drops up to 40 percent, and switching times down to 60 ps are obtained in low-duty-cycle pulsed experiments with threshold currents around 400 mA. Optimum device parameters...

  2. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

    Science.gov (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

    2017-12-01

    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  3. Innovative architecture of switching device for expanding the applications in fiber to the home (FTTH)

    Science.gov (United States)

    Mahmoud, Mohamed; Fayed, Heba A.; Aly, Moustafa H.; Aboul Seoud, A. K.

    2011-08-01

    A new device, optical cross add drop multiplexer (OXADM), is proposed and analyzed. It uses the combination concept of optical add drop multiplexer (OADM) and optical cross connect (OXC). It enables a wavelength switch while implementing add and drop functions simultaneously. So, it expands the applications in fiber to the home (FTTH) and optical core networks. A very high isolation crosstalk level (~ 60 dB) is achieved. Also, a bidirectional OXADM and N×N OXADM are proposed. Finally, a multistage OXADM is presented making some sort of wavelength buffering. To make these devices operate more efficient, tunable fiber Bragg gratings (TFBGs) switches are used to control the operation mechanism.

  4. Attentional flexibility and memory capacity in conductors and pianists.

    Science.gov (United States)

    Wöllner, Clemens; Halpern, Andrea R

    2016-01-01

    Individuals with high working memory (WM) capacity also tend to have better selective and divided attention. Although both capacities are essential for skilled performance in many areas, evidence for potential training and expertise effects is scarce. We investigated the attentional flexibility of musical conductors by comparing them to equivalently trained pianists. Conductors must focus their attention both on individual instruments and on larger sections of different instruments. We studied students and professionals in both domains to assess the contributions of age and training to these skills. Participants completed WM span tests for auditory and visual (notated) pitches and timing durations, as well as long-term memory tests. In three dichotic attention tasks, they were asked to detect small pitch and timing deviations from two melodic streams presented in baseline (separate streams), selective-attention (concentrating on only one stream), and divided-attention (concentrating on targets in both streams simultaneously) conditions. Conductors were better than pianists in detecting timing deviations in divided attention, and experts detected more targets than students. We found no group differences for WM capacity or for pitch deviations in the attention tasks, even after controlling for the older age of the experts. Musicians' WM spans across multimodal conditions were positively related to selective and divided attention. High-WM participants also had shorter reaction times in selective attention. Taken together, conductors showed higher attentional flexibility in successfully switching between different foci of attention.

  5. On-Chip Fluorescence Switching System for Constructing a Rewritable Random Access Data Storage Device.

    Science.gov (United States)

    Nguyen, Hoang Hiep; Park, Jeho; Hwang, Seungwoo; Kwon, Oh Seok; Lee, Chang-Soo; Shin, Yong-Beom; Ha, Tai Hwan; Kim, Moonil

    2018-01-10

    We report the development of on-chip fluorescence switching system based on DNA strand displacement and DNA hybridization for the construction of a rewritable and randomly accessible data storage device. In this study, the feasibility and potential effectiveness of our proposed system was evaluated with a series of wet experiments involving 40 bits (5 bytes) of data encoding a 5-charactered text (KRIBB). Also, a flexible data rewriting function was achieved by converting fluorescence signals between "ON" and "OFF" through DNA strand displacement and hybridization events. In addition, the proposed system was successfully validated on a microfluidic chip which could further facilitate the encoding and decoding process of data. To the best of our knowledge, this is the first report on the use of DNA hybridization and DNA strand displacement in the field of data storage devices. Taken together, our results demonstrated that DNA-based fluorescence switching could be applicable to construct a rewritable and randomly accessible data storage device through controllable DNA manipulations.

  6. Films of Carbon Nanomaterials for Transparent Conductors

    Directory of Open Access Journals (Sweden)

    Jun Wei

    2013-05-01

    Full Text Available The demand for transparent conductors is expected to grow rapidly as electronic devices, such as touch screens, displays, solid state lighting and photovoltaics become ubiquitous in our lives. Doped metal oxides, especially indium tin oxide, are the commonly used materials for transparent conductors. As there are some drawbacks to this class of materials, exploration of alternative materials has been conducted. There is an interest in films of carbon nanomaterials such as, carbon nanotubes and graphene as they exhibit outstanding properties. This article reviews the synthesis and assembly of these films and their post-treatment. These processes determine the film performance and understanding of this platform will be useful for future work to improve the film performance.

  7. A study on the short-circuit test by fault angle control and the recovery characteristics of the fault current limiter using coated conductor

    International Nuclear Information System (INIS)

    Park, D.K.; Kim, Y.J.; Ahn, M.C.; Yang, S.E.; Seok, B.-Y.; Ko, T.K.

    2007-01-01

    Superconducting fault current limiters (SFCLs) have been developed in many countries, and they are expected to be used in the recent electric power systems, because of their great efficiency for operating these power system stably. It is necessary for resistive FCLs to generate resistance immediately and to have a fast recovery characteristic after the fault clearance, because of re-closing operation. Short-circuit tests are performed to obtained current limiting operational and recovery characteristics of the FCL by a fault controller using a power switching device. The power switching device consists of anti-parallel connected thyristors. The fault occurs at the desired angle by controlling the firing angle of thyristors. Resistive SFCLs have different current limiting characteristics with respect to the fault angle in the first swing during the fault. This study deals with the short-circuit characteristic of FCL coils using two different YBCO coated conductors (CCs), 344 and 344s, by controlling the fault angle and experimental studies on the recovery characteristic by a small current flowing through the SFCL after the fault clearance. Tests are performed at various voltages applied to the SFCL in a saturated liquid nitrogen cooling system

  8. Photo-switch of pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Ketta, W.W.J.

    1989-01-01

    In this work passive Q-switching and its effect on the output laser beam from a pulsed Nd:YAG laser was studied. This was achieved using the photochemically stable (BDNI) dye after dissolving it in dichloroethane. The absorption spectra of the dye solution and how suitable to use with Nd:YAG laser was also dealt with. Cooling unit for the laser system, a detector to detect the output pulse, and an electronic counter to measure the pulse duration were constructed. In the free-running regime, the divergence angle was measured. The form of the output, its energy, and how it is affected by the pumping energy were also studied. In the Q-switching regime, the relation between output and pumping energies was studied and compared to the same relation under the free-running regime. 5 tabs.; 33 figs.; 57 refs

  9. Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

    Science.gov (United States)

    Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

    2018-05-10

    Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

  10. High Charge PHIN Photo Injector at CERN with Fast Phase switching within the Bunch Train for Beam Combination

    CERN Document Server

    Csatari Divall, M; Bolzon, B; Bravin, E; Chevallay, E; Dabrowski, A; Doebert, S; Drozdy, A; Fedosseev, V; Hessler, C; Lefevre, T; Livesley, S; Losito, R; Olvegaard, M; Petrarca, M; Rabiller, A N; Egger, D; Mete, O

    2011-01-01

    The high charge PHIN photo-injector was developed within the framework of the European CARE program to provide an alternative to the drive beam thermionic gun in the CTF3 (CLIC Test Facility) at CERN. In PHIN 1908 electron bunches are delivered with bunch spacing of 1.5 GHz and 2.33 nC charge per bunch. Furthermore the drive beam generated by CTF3 requires several fast 180 deg phase-shifts with respect to the 1.5 GHz bunch repetition frequency in order to allow the beam combination scheme developed at CTF3. A total of 8 subtrains, each 140 ns long and shifted in phase with respect to each other, have to be produced with very high phase and amplitude stability. A novel fiber modulator based phase-switching technique developed on the laser system provides this phase-shift between two consecutive pulses much faster and cleaner than the base line scheme, where a thermionic electron gun and sub-harmonic bunching are used. The paper describes the fiber-based switching system and the measurements verifying the schem...

  11. Design and construction of a resistive energy dump device for bipolar superconducting magnet systems

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, M. J.

    1977-05-01

    When superconducting magnets quench, the resistance of the conductor material rises rapidly to its normal value. This increase in resistance can result in catastrophic heating in the magnet unless stored field energy is quickly removed from the system. Phase inversion is the normal mode of energy removal. SCR's in the power supply are phased back, the output of the supply is inverted, and magnetic field energy is directed back into the utility grid. Under certain conditions, however, the power supply may fail to invert properly, and an alternate energy removal scheme must protect the superconducting magnet system. Composed of an isolation switch, a semiconductor switching module, and a dump resistor, the resistive dump device provides a viable protection scheme. Operationally, several conditions are capable of activating the isolation switch and triggering the bipolar SCR switching module. Manual dump commands, for instance, permit the operator to dump field energy in the event of observed abnormalities. A special voltage tap quench detector senses the aforementioned abnormal power supply output inversion and also fires the dump circuit. Regardless of the nature of the trigger input, however, activation of the energy dump device diverts coil current through the dump resistor. I/sup 2/R losses over time then safely dissipate stored magnetic field energy.

  12. ATLAS SemiConductor Tracker Operation and Performance

    CERN Document Server

    Tojo, J; The ATLAS collaboration

    2011-01-01

    The SemiConductor Tracker (SCT), comprising of silicon micro-strip detectors is one of the key precision tracking devices in the ATLAS Inner Detector. ATLAS is one of the experiments at CERN LHC. The completed SCT is in very good shapes with 99.3% of the SCT’s 4088 modules (a total of 6.3 million strips) are operational. The noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector, its performance and observed problems, with stress on the sensor and electronics performance. In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton-proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The Semi- Conductor Tracker (SCT) is the key precision tracking device in ATLAS, made from silicon micro-strip detectors processed in the planar p-in-n technology. The signals from the stri...

  13. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2017-01-01

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  14. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  15. Method of installing well conductors

    International Nuclear Information System (INIS)

    Houser, D.M.

    1991-01-01

    This patent describes a method of installing a well conductor in a marine environment. It comprises sealing a well conductor with a watertight plug; submerging the conductor from an elevated platform; adding additional conductor lengths to the conductor as needed thereby forming a conductor string; adjusting the buoyancy of the string to control the lowering of the string to the sea floor; and drilling through the plug after the conductor string has achieved the desired penetration depth

  16. An Organic Mixed Ion-Electron Conductor for Power Electronics

    DEFF Research Database (Denmark)

    Malti, Abdellah; Edberg, Jesper; Granberg, Hjalmar

    2016-01-01

    A mixed ionic–electronic conductor based on nanofibrillated cellulose composited with poly(3,4-ethylene-dioxythio­phene):­poly(styrene-sulfonate) along with high boiling point solvents is demonstrated in bulky electrochemical devices. The high electronic and ionic conductivities of the resulting...

  17. An Organic Mixed Ion–Electron Conductor for Power Electronics

    DEFF Research Database (Denmark)

    Malti, Abdellah; Edberg, Jesper; Granberg, Hjalmar

    2016-01-01

    A mixed ionic–electronic conductor based on nanofibrillated cellulose composited with poly(3,4-ethylene-dioxythio­phene):­poly(styrene-sulfonate) along with high boiling point solvents is demonstrated in bulky electrochemical devices. The high electronic and ionic conductivities of the resulting...

  18. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.; Pu, L.; Wu, J.C.; Cha, Dong Kyu; Hong, J.H.; Lin, W.N.; Li, Yangyang; Ding, Junfeng; David, A.; Li, K.; Wu, Tao

    2013-01-01

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3

  19. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

    Science.gov (United States)

    Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

    2016-06-01

    We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.

  20. Noise tolerance in wavelength-selective switching of optical differential quadrature-phase-shift-keying pulse train by collinear acousto-optic devices.

    Science.gov (United States)

    Goto, Nobuo; Miyazaki, Yasumitsu

    2014-06-01

    Optical switching of high-bit-rate quadrature-phase-shift-keying (QPSK) pulse trains using collinear acousto-optic (AO) devices is theoretically discussed. Since the collinear AO devices have wavelength selectivity, the switched optical pulse trains suffer from distortion when the bandwidth of the pulse train is comparable to the pass bandwidth of the AO device. As the AO device, a sidelobe-suppressed device with a tapered surface-acoustic-wave (SAW) waveguide and a Butterworth-type filter device with a lossy SAW directional coupler are considered. Phase distortion of optical pulse trains at 40 to 100  Gsymbols/s in QPSK format is numerically analyzed. Bit-error-rate performance with additive Gaussian noise is also evaluated by the Monte Carlo method.

  1. Piezo-phototronic effect devices

    Science.gov (United States)

    Wang, Zhong L.; Yang, Qing

    2013-09-10

    A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

  2. Cooperative photo-induced effects: from photo-magnetism under continuous irradiation to ultra-fast phenomena - study through optical spectroscopy and X-ray diffraction

    International Nuclear Information System (INIS)

    Glijer, D.

    2006-12-01

    The control with ultra-short laser pulses of the collective and concerted transformation of molecules driving a macroscopic state switching on an ultra-fast time scale in solid state opens new prospects in materials science. The goal is to realize at the material level what happens at the molecular level in femto-chemistry. These processes are highly cooperative and highly non-linear, leading to self-amplification and self-organization within the material, a so-called photo-induced phase transition with a new long range order (structural, magnetic, ferroelectric,...). Two families of molecular compounds have been studied here: first of all, spin transition materials changing from a diamagnetic state over to a paramagnetic state under the effect of temperature or under continuous laser excitation. It concerns photo-active molecular bi-stability prototype materials in solid state, whose switching has been studied during X-ray diffraction, optical reflectivity and magnetism experiments. Then we have studied charge-transfer molecular systems, prototype compounds for ultrafast photo-induced phase transitions: insulator-metal, neutral-ionic....As well as ultrafast optical experiments, time-resolved X ray crystallography is a key technique in order to follow at the atomic level the different steps of the photo-induced transformation and thus to observe the involved mechanisms. We have underlined a process of photo-formation of one-dimensional nano-domains of lattice-relaxed charge-transfer excitations, governing the photo-induced phase transition of the molecular charge-transfer complex TTF-CA by the first time-resolved diffuse scattering measurements. Moreover, a new femtosecond laser-plasma source and a optical pump-probe spectroscopy set-up with a highly sensitive detecting system have been developed in this work. The results presented here will be an illustration of the present scientific challenges existing on the one hand with the development of projects of major

  3. Stabilization of a Nb3Sn persistent current switch

    International Nuclear Information System (INIS)

    Urata, M.; Maeda, H.; Nakayama, S.; Yoneda, E.; Oda, Y.; Kumano, T.; Aoki, N.; Tomisaki, T.; Kabashima, S.

    1993-01-01

    A 2000 A class Nb 3 Sn persistent current switch has been successfully fabricated in the Toshiba R and D Center. The Nb tube processed conductor with Cu-10 wt.% Ni matrix has been developed for the switch in the Showa Electric Wire and Cable Co. Ltd. The magnetic instability which was observed in the previous 35 Ω Nb 3 Sn persistent current switch was improved in the present switch. The problem of quench current degradation and flux jump on magnetization, emerged in the previous switch, were confirmed to be solved. In the fast ramp, however, the switch degrades from the calculated results assuming the self field ac loss. In the Nb 3 Sn reaction process, Sn in the bronze diffuses into the Nb tube, which decreases the switch resistance. It was observed by a computer aided micro analysis (CMA) that Ni in the CuNi matrix precipitated on the Nb tube, which slightly reduced the switch resistance. (orig.)

  4. Device for testing continuity and/or short circuits in a cable

    Science.gov (United States)

    Hayhurst, Arthur R. (Inventor)

    1995-01-01

    A device for testing current paths is attachable to a conductor. The device automatically checks the current paths of the conductor for continuity of a center conductor, continuity of a shield and a short circuit between the shield and the center conductor. The device includes a pair of connectors and a circuit to provide for testing of the conductive paths of the cable. The pair of connectors electrically connects the conductive paths of a cable to be tested with the circuit paths of the circuit. The circuit paths in the circuit include indicators to simultaneously indicate the results of the testing.

  5. On a mechanism of switching off low-hybrid run away currents in tokamak devices

    International Nuclear Information System (INIS)

    Budnikov, V.N.; Esipov, L.A.; Irzak, M.A.

    1990-01-01

    The problem of the generation of low-hybrid run-away currents (LR) in tokamak devices is described. The mechanism of switching off LRCs is considered. Qualitative representation of the density limit, the transitions of which stops the generation of currents, is given

  6. Photo-assisted local oxidation of GaN using an atomic force microscope

    International Nuclear Information System (INIS)

    Hwang, J S; Hu, Z S; Lu, T Y; Chen, L W; Chen, S W; Lin, T Y; Hsiao, C-L; Chen, K-H; Chen, L-C

    2006-01-01

    This paper introduces a photo-assisted atomic force microscope (AFM) local oxidation technique which is capable of producing highly smooth oxide patterns with heights reaching several tens of nanometres on both n- and p-types of GaN (and in principle on most semiconductors) without the use of chemicals. The novel methodology relies on UV illumination of the surface of the substrate during conventional AFM local oxidation. A low 1.2 V threshold voltage for n-type GaN was obtained, which can be explained by UV photo-generation of excess electron-hole pairs in the substrate near the junction, thereby reducing the electric field required to drive carrier flow through the tip-sample Schottky barrier. It was demonstrated that the presence or absence of light alone was sufficient to switch the growth of the oxide on or off. The photo-assisted AFM oxidation technique is of immediate interest to the semiconductor industry for the fabrication of GaN-based complementary metal-oxide-semiconductor devices and nanodevices, improves chances for AFM-type data storage, and presents new degrees of freedom for process control technique

  7. Tutorial: Integrated-photonic switching structures

    Science.gov (United States)

    Soref, Richard

    2018-02-01

    Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

  8. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  9. Test of 60 kA coated conductor cable prototypes for fusion magnets

    Science.gov (United States)

    Uglietti, D.; Bykovsky, N.; Sedlak, K.; Stepanov, B.; Wesche, R.; Bruzzone, P.

    2015-12-01

    Coated conductors could be promising materials for the fabrication of the large magnet systems of future fusion devices. Two prototype conductors (flat cables in steel conduits), each about 2 m long, were manufactured using coated conductor tapes (4 mm wide) from Super Power and SuperOx, with a total tape length of 1.6 km. Each flat cable is assembled from 20 strands, each strand consisting of a stack of 16 tapes surrounded by two half circular copper profiles, twisted and soldered. The tapes were measured at 12 T and 4.2 K and the results of the measurements were used for the assessment of the conductor electromagnetic properties at low temperature and high field. The two conductors were assembled together in a sample that was tested in the European Dipole (EDIPO) facility. The current sharing temperatures of the two conductors were measured at background fields from 8 T up to 12 T and for currents from 30 kA up to 70 kA: the measured values are within a few percent of the values expected from the measurements on tapes (short samples). After electromagnetic cycling, T cs at 12 T and 50 kA decreased from about 12 K to 11 K (about 10%), corresponding to less than 3% of I c.

  10. Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

    Science.gov (United States)

    Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

    Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

  11. Preliminary experiment research of explosively driven opening switch

    International Nuclear Information System (INIS)

    Li Xiaolin; Chen Dongqun; Li Da; Cao Shengguang; Chen Yingcong

    2010-01-01

    In pulse power technology field, many loads require high current pulse with fast risetime, but sometimes, the common high current pulse powers don't satisfy request, thus there need pulse erection switches of sorts to shorten pulse risetime. Explosively driven opening switch (EDOS) is a good choice, it has simple structure and excellent performance, the primary parameters of EDOS are opening time, opening resistance, opening current and dissipation energy, which determine its performance and range for applications. For this, two kinds of EDOS are designed and manufactured, in the later experiments, the power supply is a 200 μF capacitor and the conductor is 0.03 mm copper foil, the results indicate that the two kinds of EDOS have good performance, the opening time is about 1-3 μs, the opening resistance is about 1-2 Ω, the opening current is about 24-31 kA and the average dissipation energy is about 0.125-0.34 kJ per groove, the capability of conduction current is adjusted by the thickness of conductor along with different opening current. (authors)

  12. Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

    Science.gov (United States)

    Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

    2018-06-01

    Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

  13. Effect of different substitution position on the switching behavior in single-molecule device with carbon nanotube electrodes

    Science.gov (United States)

    Yang, Jingjuan; Han, Xiaoxiao; Yuan, Peipei; Bian, Baoan; Wang, Yixiang

    2018-01-01

    We investigate the electronic transport properties of dihydroazulene (DHA) and vinylheptafulvene (VHF) molecule sandwiched between two carbon nanotubes using density functional theory and non-equilibrium Green's function. The device displays significantly switching behavior between DHA and VHF isomerizations. It is found the different substitution position of F in the molecule influences the switching ratio of device, which is analyzed by transmission spectra and molecular projected self-consistent Hamiltonian. The observed negative differential resistance effect is explained by transmission spectra and transmission eigenstates of transmission peak in the bias window. The observed reverse of current in VHF form in which two H atoms on the right side of the benzene ring of the molecule are replaced by F is explained by transmission spectra and molecule-electrode coupling with the varied bias. The results suggest that the reasonable substitution position of molecule may improve the switching ratio, displaying a potential application in future molecular circuit.

  14. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  15. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

    Science.gov (United States)

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  16. Plasma Generator Using Spiral Conductors

    Science.gov (United States)

    Szatkowski, George N. (Inventor); Dudley, Kenneth L. (Inventor); Ticatch, Larry A. (Inventor); Smith, Laura J. (Inventor); Koppen, Sandra V. (Inventor); Nguyen, Truong X. (Inventor); Ely, Jay J. (Inventor)

    2016-01-01

    A plasma generator includes a pair of identical spiraled electrical conductors separated by dielectric material. Both spiraled conductors have inductance and capacitance wherein, in the presence of a time-varying electromagnetic field, the spiraled conductors resonate to generate a harmonic electromagnetic field response. The spiraled conductors lie in parallel planes and partially overlap one another in a direction perpendicular to the parallel planes. The geometric centers of the spiraled conductors define endpoints of a line that is non-perpendicular with respect to the parallel planes. A voltage source coupled across the spiraled conductors applies a voltage sufficient to generate a plasma in at least a portion of the dielectric material.

  17. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  18. Conductor for a fluid-cooled winding

    Science.gov (United States)

    Kenney, Walter J.

    1983-01-01

    A conductor and method of making the conductor are provided for use in winding electrical coils which are cooled by a fluid communicating with the conductor. The conductor is cold worked through twisting and reshaping steps to form a generally rectangular cross section conductor having a plurality of helical cooling grooves extending axially of the conductor. The conductor configuration makes it suitable for a wide variety of winding applications and permits the use of simple strip insulation between turns and perforated sheet insulation between layers of the winding.

  19. Device for acoustic detection in a nuclear reactor

    International Nuclear Information System (INIS)

    Hanff, M.; Lions, N.; Peronnet, J.

    1975-01-01

    A description is given of a device which comprises a first acoustic conductor placed vertically within the coolant liquid contained in a nuclear reactor vessel and a second coaxial acoustic conductor extending to the exterior of the reactor vessel. The device essentially comprises an accelerometer assembly for detecting signals delivered by the second conductor and an amplifier which applies the detected signals to measuring instruments located outside the reactor vessel. The accelerometer comprises an amplifying pressure needle carried by the upper end of the second conductor, a piezoelectric ceramic element, a block fitted with a spring for applying the ceramic element against the needle and a preamplifier connected in series with the amplifier

  20. New a-Si:H photo-detectors for long-term charge storage

    International Nuclear Information System (INIS)

    Lee, H.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1993-04-01

    Using the high light absorption properties of amorphous silicon, we developed a new device configuration that can detect photons and store the induced charges for relatively long time. This device, coupled to a scintillator such as CsI(Tl) in an array form, could be used as a scintillation camera, or for long-term photo-detection such as radionuclide labeled chromatography. The detector has a simple sandwich structure consisting of a scintillator followed by a top metal layer, p-i-n layers of hydrogenated amorphous silicon (a-Si:H), a second metal layer, a thin insulating layer and a bottom metal layer. The electron-hole pairs generated in the i-layer by the interaction with the incident light will be separated by the imposed electric field and be stored in the central metal-insulator interface. Readout will be done by switching the external bias to ground after the storage time, which depends on the needs for the specific application. Prototype devices were fabricated and tested. The performances of the devices were analyzed in connection with the storage time and the background signal produced by the thermally generated charges

  1. Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

    Science.gov (United States)

    Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

    2016-12-01

    Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  2. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Science.gov (United States)

    2010-10-01

    ... rail assemblies or other transition devices on moveable bridges. 213.235 Section 213.235 Transportation... assemblies or other transition devices on moveable bridges. (a) Except as provided in paragraph (c) of this section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

  3. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

    DEFF Research Database (Denmark)

    Ma, Ke; Blaabjerg, Frede

    2012-01-01

    Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because...

  4. Cooperative photo-induced effects: from photo-magnetism under continuous irradiation to ultra-fast phenomena - study through optical spectroscopy and X-ray diffraction; Effets photo-induits cooperatifs: du photomagnetisme sous irradiation continue aux phenomenes ultrarapides - etude par spectroscopie optique et diffraction X

    Energy Technology Data Exchange (ETDEWEB)

    Glijer, D

    2006-12-15

    The control with ultra-short laser pulses of the collective and concerted transformation of molecules driving a macroscopic state switching on an ultra-fast time scale in solid state opens new prospects in materials science. The goal is to realize at the material level what happens at the molecular level in femto-chemistry. These processes are highly cooperative and highly non-linear, leading to self-amplification and self-organization within the material, a so-called photo-induced phase transition with a new long range order (structural, magnetic, ferroelectric,...). Two families of molecular compounds have been studied here: first of all, spin transition materials changing from a diamagnetic state over to a paramagnetic state under the effect of temperature or under continuous laser excitation. It concerns photo-active molecular bi-stability prototype materials in solid state, whose switching has been studied during X-ray diffraction, optical reflectivity and magnetism experiments. Then we have studied charge-transfer molecular systems, prototype compounds for ultrafast photo-induced phase transitions: insulator-metal, neutral-ionic....As well as ultrafast optical experiments, time-resolved X ray crystallography is a key technique in order to follow at the atomic level the different steps of the photo-induced transformation and thus to observe the involved mechanisms. We have underlined a process of photo-formation of one-dimensional nano-domains of lattice-relaxed charge-transfer excitations, governing the photo-induced phase transition of the molecular charge-transfer complex TTF-CA by the first time-resolved diffuse scattering measurements. Moreover, a new femtosecond laser-plasma source and a optical pump-probe spectroscopy set-up with a highly sensitive detecting system have been developed in this work. The results presented here will be an illustration of the present scientific challenges existing on the one hand with the development of projects of major

  5. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Science.gov (United States)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  6. High-field thermal transports properties of REBCO coated conductors

    CERN Document Server

    Bonura, M

    2015-01-01

    The use of REBCO coated conductors is envisaged for many applications, extending from power cables to high-field magnets. Whatever the case, thermal properties of REBCO tapes play a key role for the stability of superconducting devices. In this work, we present the first study on the longitudinal thermal conductivity (k) of REBCO coated conductors in magnetic fields up to 19 T applied both parallelly and perpendicularly to the thermal-current direction. Copper-stabilized tapes from six industrial manufacturers have been investigated. We show that zero-field k of coated conductors can be calculated with an accuracy of ‡ 15% from the residual resistivity ratio of the stabilizer and the Cu/non-Cu ratio. Measurements performed at high fields have allowed us to evaluate the consistency of the procedures generally used for estimating in-field k in the framework of the Wiedemann-Franz law from an electrical characterization of the materials. In-field data are intended to provide primary ingredients for the ...

  7. Temperature limited heater utilizing non-ferromagnetic conductor

    Science.gov (United States)

    Vinegar,; Harold J. , Harris; Kelvin, Christopher [Houston, TX

    2012-07-17

    A heater is described. The heater includes a ferromagnetic conductor and an electrical conductor electrically coupled to the ferromagnetic conductor. The ferromagnetic conductor is positioned relative to the electrical conductor such that an electromagnetic field produced by time-varying current flow in the ferromagnetic conductor confines a majority of the flow of the electrical current to the electrical conductor at temperatures below or near a selected temperature.

  8. Pump-Power-Driven Mode Switching in a Microcavity Device and Its Relation to Bose-Einstein Condensation

    Directory of Open Access Journals (Sweden)

    H. A. M. Leymann

    2017-06-01

    Full Text Available We investigate the switching of the coherent emission mode of a bimodal microcavity device, occurring when the pump power is varied. We compare experimental data to theoretical results and identify the underlying mechanism based on the competition between the effective gain, on the one hand, and the intermode kinetics, on the other. When the pumping is ramped up, above a threshold, the mode with the largest effective gain starts to emit coherent light, corresponding to lasing. In contrast, in the limit of strong pumping, it is the intermode kinetics that determines which mode acquires a large occupation and shows coherent emission. We point out that this latter mechanism is akin to the equilibrium Bose-Einstein condensation of massive bosons. Thus, the mode switching in our microcavity device can be viewed as a minimal instance of Bose-Einstein condensation of photons. Moreover, we show that the switching from one cavity mode to the other always occurs via an intermediate phase where both modes are emitting coherent light and that it is associated with both superthermal intensity fluctuations and strong anticorrelations between both modes.

  9. Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

    OpenAIRE

    Liu, G.; Zhang, E. X.; Liang, C. D.; Bloodgood, M. A.; Salguero, T. T.; Fleetwood, D. M.; Balandin, A. A.

    2017-01-01

    The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persisten...

  10. THESEUS: A wavelength division multiplexed/microwave subcarrier multiplexed optical network, its ATM switch applications and device requirements

    Science.gov (United States)

    Xin, Wei

    1997-10-01

    A Terabit Hybrid Electro-optical /underline[Se]lf- routing Ultrafast Switch (THESEUS) has been proposed. It is a self-routing wavelength division multiplexed (WDM) / microwave subcarrier multiplexed (SCM) asynchronous transfer mode (ATM) switch for the multirate ATM networks. It has potential to be extended to a large ATM switch as 1000 x 1000 without internal blocking. Among the advantages of the hybrid implementation are flexibility in service upgrade, relaxed tolerances on optical filtering, protocol simplification and less processing overhead. For a small ATM switch, the subcarrier can be used as output buffers to solve output contention. A mathematical analysis was conducted to evaluate different buffer configurations. A testbed has been successfully constructed. Multirate binary data streams have been switched through the testbed and error free reception ([<]10-9 bit error rate) has been achieved. A simple, intuitive theoretical model has been developed to describe the heterodyne optical beat interference. A new concept of interference time and interference length has been introduced. An experimental confirmation has been conducted. The experimental results match the model very well. It shows that a large portion of optical bandwidth is wasted due to the beat interference. Based on the model, several improvement approaches have been proposed. The photo-generated carrier lifetime of silicon germanium has been measured using time-resolved reflectivity measurement. Via oxygen ion implantation, the carrier lifetime has been reduced to as short as 1 ps, corresponding to 1 THz of photodetector bandwidth. It has also been shown that copper dopants act as recombination centers in the silicon germanium.

  11. Is there evidence for the added value and correct use of manual and automatically switching multimemory hearing devices? A scoping review

    NARCIS (Netherlands)

    de Graaff, Feike; Huysmans, Elke; Ket, Johannes C.F.; Merkus, Paul; Goverts, S. Theo; Leemans, C. René; Smits, Cas

    2018-01-01

    Objectives: To review literature on the use of manual and automatically switching multimemory devices by hearing aid and CI recipients, and to investigate if recipients appreciate and adequately use the ability to switch between programmes in various listening environments. Design: Literature was

  12. Photo-induced reduction of flavin mononucleotide in aqueous solutions

    International Nuclear Information System (INIS)

    Song, S.-H.; Dick, B.; Penzkofer, A.

    2007-01-01

    The photo-induced reduction of flavin mononucleotide (FMN) in aqueous solutions is studied by absorption spectra measurement under aerobic and anaerobic conditions. Samples without exogenous reducing agent and with the exogenous reducing agents ethylene-diamine-tetraacetic acid (EDTA) and dithiothreitol (DTT) are investigated. Under anaerobic conditions the photo-induced reduction with and without reducing agents is irreversible. Under aerobic conditions the photo-reduction without added reducing agent is small compared to the photo-degradation, and the photo-reduction of FMN by the reducing agents is reversible (re-oxidation in the dark). During photo-excitation of FMN the dissolved oxygen is consumed by singlet oxygen formation and subsequent chemical reaction. After light switch-off slow re-oxidation (slow absorption recovery) occurs due to air in-diffusion from surface. EDTA degradation by FMN excitation leads to oxygen scavenging. The quantum efficiencies of photo-reduction under aerobic and anaerobic conditions are determined. The re-oxidation of reduced FMN under aerobic conditions and due to air injection is investigated

  13. Fabrication process of a superconducting multifilament conductor of a cable and resulting electric conductor

    International Nuclear Information System (INIS)

    Fevrier, A.; Verhaege, T.; Bonnet, P.

    1990-01-01

    Elementary conductors constituted of a plurality of superconducting filaments in a metallic matrix are prepared and then twisted. Elementary conductors with a diameter between 0.05 and 0.25 mm without electric insulation are twisted after heating with a pitch of four time the diameter, finally the conductor is insulated [fr

  14. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  15. Embrittlement phenomenon of Ag core MP35N cable as lead conductor in medical device.

    Science.gov (United States)

    Wang, Ling; Li, Bernie; Zhang, Haitao

    2013-02-01

    Ag core MP35N (Ag/MP35N) wire has been used in lead electric conductor wires in the medical device industry for many years. Recently it was noticed that the combination of silver and MP35N restricts its wire drawing process. The annealing temperature in Ag/MP35N has to be lower than the melting temperature of pure Ag (960 °C), which cannot fully anneal MP35N. The lower annealing temperature results in a highly cold worked MP35N, which significantly reduces Ag/MP35N ductility. The embrittlement phenomenon of Ag/MP35N cable was observed in tension and bending deformation. The effect of the embrittlement on the wire flex fatigue life was evaluated using a newly developed flex fatigue testing method. The Ag/MP35N cable fatigue results was analyzed with a Coffin-Manson approach and compared to the MP35N cable fatigue results. The root causes of the Ag/Mp35N embrittlement phenomenon are discussed. Copyright © 2012 Elsevier Ltd. All rights reserved.

  16. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  17. Improvement on Main/backup Controller Switching Device of the Nozzle Throat Area Control System for a Turbofan Aero Engine

    Science.gov (United States)

    Li, Jie; Duan, Minghu; Yan, Maode; Li, Gang; Li, Xiaohui

    2014-06-01

    A full authority digital electronic controller (FADEC) equipped with a full authority hydro-mechanical backup controller (FAHMBC) is adopted as the nozzle throat area control system (NTACS) of a turbofan aero engine. In order to ensure the switching reliability of the main/backup controller, the nozzle throat area control switching valve was improved from three-way convex desktop slide valve to six-way convex desktop slide valve. Simulation results show that, if malfunctions of FAEDC occur and abnormal signals are outputted from FADEC, NTACS will be seriously influenced by the main/backup controller switching in several working states, while NTACS will not be influenced by using the improved nozzle throat area control switching valve, thus the controller switching process will become safer and smoother and the working reliability of this turbofan aero engine is improved by the controller switching device improvement.

  18. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Neeves, Matthew; Placido, Frank [Thin Film Centre, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Smithwick, Quinn [Disney Research, 521 Circle Seven Drive, Glendale, Los Angeles, California 91201 (United States)

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  19. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    International Nuclear Information System (INIS)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-01-01

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO x thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm 2 , exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively

  20. Large aperture optical switching devices

    International Nuclear Information System (INIS)

    Goldhar, J.; Henesian, M.A.

    1983-01-01

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs

  1. Cooling device of superconducting coils

    International Nuclear Information System (INIS)

    Duthil, R.; Lottin, J.C.

    1985-01-01

    This device is rotating around an horizontal axis. The superconducting coils are contained in a cryogenic enclosure feeded in liquid helium forced circulation. They are related to an electric generator by electric mains each of them comprising a gas exchanger, and an exchanger-evaporator set between the cryogenic device and those exchangers. The exchanger-evaporator is aimed at dissipating the heat arriving by conductors connected to the superconducting coils. According to the invention, the invention includes an annular canalization with horizontal axis in which the connection conductors bathe in liquid helium [fr

  2. Low ac loss geometries in YBCO coated conductors and impact on conductor stability

    Energy Technology Data Exchange (ETDEWEB)

    Duckworth, Robert C [ORNL; List III, Frederick Alyious [ORNL; Paranthaman, Mariappan Parans [ORNL; Rupich, M. W. [American Superconductor Corporation, Westborough, MA; Zhang, W. [American Superconductor Corporation, Westborough, MA; Xie, Y. Y. [SuperPower Incorporated, Schenectady, New York; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York

    2007-01-01

    Reduction of ac losses in applied ac fields can be accomplished through either the creation of filaments and bridging in YBCO coated conductors or an assembly of narrow width YBCO tapes. The ac losses for each of these geometries were measured at 77 K in perpendicular ac fields up to 100 mT. While ac loss reduction was achieved with YBCO filaments created through laser scribing and inkjet deposition, the assembly of stacked YBCO conductor provides an alternative method of ac loss reduction. When compared to a 4-mm wide YBCO coated conductor with a critical current of 60 A, the ac loss in a stack of 2-mm wide YBCO coated conductors with a similar total critical current was reduced. While the reduction in ac loss in a 2-mm wide stack coincided with the reduction in the engineering current density of the conductor, further reduction of ac loss was obtained through the splicing of the 2-mm wide tapes with low resistance solders. To better determine the practicality of these methods from a stability point of view, a numerical analysis was carried out to determine the influence of bridging and splicing on stability of a YBCO coated conductor for both liquid nitrogen-cooled and conduction cooled geometries.

  3. Modularized and water-cooled photo-catalyst cleaning devices for aquaponics based on ultraviolet light-emitting diodes

    Science.gov (United States)

    Yang, Henglong; Lung, Louis; Wei, Yu-Chien; Huang, Yi-Bo; Chen, Zi-Yu; Chou, Yu-Yang; Lin, Anne-Chin

    2017-08-01

    The feasibility of applying ultraviolet light-emitting diodes (UV-LED's) as triggering sources of photo-catalyst based on titanium dioxide (TiO2) nano-coating specifically for water-cleaning process in an aquaponics system was designed and proposed. The aquaponics system is a modern farming system to integrate aquaculture and hydroponics into a single system to establish an environmental-friendly and lower-cost method for farming fish and vegetable all together in urban area. Water treatment in an aquaponics system is crucial to avoid mutual contamination. we proposed a modularized watercleaning device composed of all commercially available components and parts to eliminate organic contaminants by using UV-LED's for TiO2 photo-catalyst reaction. This water-cleaning module consisted of two coaxial hollowed cylindrical pipes can be submerged completely in water for water treatment and cooling UV-LED's. The temperature of the UV-LED after proper thermal management can be reduced about 16% to maintain the optimal operation condition. Our preliminary experimental result by using Methylene Blue solution to simulate organic contaminants indicated that TiO2 photo-catalyst triggered by UV-LED's can effectively decompose organic compound and decolor Methylene Blue solution.

  4. Mutual capacitance of liquid conductors in deformable tactile sensing arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bin [Electrical and Computer Engineering Department, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Fontecchio, Adam K. [Electrical and Computer Engineering and Materials Science and Engineering Departments, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Visell, Yon [Electrical and Computer Engineering Department, Media Arts and Technology, California NanoSystems Institute, University of California, Santa Barbara, California 93106 (United States)

    2016-01-04

    Advances in highly deformable electronics are needed in order to enable emerging categories of soft computing devices ranging from wearable electronics, to medical devices, and soft robotic components. The combination of highly elastic substrates with intrinsically stretchable conductors holds the promise of enabling electronic sensors that can conform to curved objects, reconfigurable displays, or soft biological tissues, including the skin. Here, we contribute sensing principles for tactile (mechanical image) sensors based on very low modulus polymer substrates with embedded liquid metal microfluidic arrays. The sensors are fabricated using a single-step casting method that utilizes fine nylon filaments to produce arrays of cylindrical channels on two layers. The liquid metal (gallium indium alloy) conductors that fill these channels readily adopt the shape of the embedding membrane, yielding levels of deformability greater than 400%, due to the use of soft polymer substrates. We modeled the sensor performance using electrostatic theory and continuum mechanics, yielding excellent agreement with experiments. Using a matrix-addressed capacitance measurement technique, we are able to resolve strain distributions with millimeter resolution over areas of several square centimeters.

  5. Measurement of local critical currents in TFA-MOD processed coated conductors by use of scanning Hall-probe microscopy

    International Nuclear Information System (INIS)

    Shiohara, K.; Higashikawa, K.; Kawaguchi, T.; Inoue, M.; Kiss, T.; Yoshizumi, M.; Izumi, T.

    2011-01-01

    We have investigated 2-dimensional distribution of critical current density. We have measured TFA-MOD processed YBCO coated conductor. We used scanning Hall-probe microscopy. These provided information is useful for fabrication process of coated conductor. We have carried out 2-dimensional (2D) measurement of local critical current in a Trifluoroacetates-Metal Organic Deposition (TFA-MOD) processed YBCO coated conductor using scanning Hall-probe microscopy. Recently, remarkable R and D accomplishments on the fabrication processes of coated conductors have been conducted extensively and reported. The TFA-MOD process has been expected as an attractive process to produce coated conductors with high performance at a low production cost due to a simple process using non-vacuum equipments. On the other hand, enhancement of critical currents and homogenization of the critical current distribution in the coated conductors are definitely very important for practical applications. According to our measurements, we can detect positions and spatial distribution of defects in the conductor. This kind of information will be very helpful for the improvement of the TFA-MOD process and for the design of the conductor intended for practical electric power device applications.

  6. Stretchable gold conductors embedded in PDMS and patterned by photolithography: fabrication and electromechanical characterization

    International Nuclear Information System (INIS)

    Adrega, T; Lacour, S P

    2010-01-01

    Stretchable gold conductors embedded in polydimethylsiloxane (PDMS) films were successfully prepared using standard photolithography. The minimum feature sizes patterned in the metal film and PDMS encapsulation are 10 µm and 20 µm, respectively. The micro-patterned conductors are robust to uni-axial (1D) and radial (2D) stretching with applied strains of tens of percent. The electrical response of the conductors follows a nonlinear increase with strain, and is reversible. The extensive stretchability of the conductors relies on a randomly and independently distributed network of micro-cracks (∼100 nm long) in the metal film on PDMS. The micro-cracks elongate to a few microns length both in the stretching and normal directions in 1D stretching but during 2D stretching, the micro-cracks grow and form 'dry mud' islands leaving the gold microstructure inside the islands intact. Patterning metallic thin films directly onto elastomeric substrates opens a promising route for microelectrodes and interconnects for soft and ultra-compliant MEMS and electronic devices.

  7. Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles

    Science.gov (United States)

    Hao, Aize; Ismail, Muhammad; He, Shuai; Huang, Wenhua; Qin, Ni; Bao, Dinghua

    2018-02-01

    The coexistence of unipolar and bipolar resistive switching (RS) behaviors of Ag-nanoparticles (Ag-NPs) doped NiFe2O4 (NFO) based memory devices was investigated. The switching voltages of required operations in the unipolar mode were smaller than those in the bipolar mode, while ON/OFF resistance levels of both modes were identical. Ag-NPs doped NFO based devices could switch between the unipolar and bipolar modes just by preferring the polarity of RESET voltage. Besides, the necessity of identical compliance current during the SET process of unipolar and bipolar modes provided an additional advantage of simplicity in device operation. Performance characteristics and cycle-to-cycle uniformity (>103 cycles) in unipolar operation were considerably better than those in bipolar mode (>102 cycles) at 25 °C. Moreover, good endurance (>600 cycles) at 200 °C was observed in unipolar mode and excellent nondestructive retention characteristics were obtained on memory cells at 125 °C and 200 °C. On the basis of temperature dependence of resistance at low resistance state, it was believed that physical origin of the RS mechanism involved the formation/rupture of the conducting paths consisting of oxygen vacancies and Ag atoms, considering Joule heating and electrochemical redox reaction effects for the unipolar and bipolar resistive switching behaviors. Our results demonstrate that 0.5% Ag-NPs doped nickel ferrites are promising resistive switching materials for resistive access memory applications.

  8. Assessment of liquid hydrogen cooled MgB2 conductors for magnetically confined fusion

    International Nuclear Information System (INIS)

    Glowacki, B A; Nuttall, W J

    2008-01-01

    Importantly environmental factors are not the only policy-driver for the hydrogen economy. Over the timescale of the development of fusion energy systems, energy security issues are likely to motivate a shift towards both hydrogen production and fusion as an energy source. These technologies combine local control of the system with the collaborative research interests of the major energy users in the global economy. A concept Fusion Island Reactor that might be used to generate H 2 (rather than electricity) is presented. Exploitation of produced hydrogen as a coolant and as a fuel is proposed in conjunction with MgB 2 conductors for the tokomak magnets windings, and electrotechnical devices for Fusion Island's infrastructure. The benefits of using MgB 2 over the Nb-based conductors during construction, operation and decommissioning of the Fusion Island Reactor are presented. The comparison of Nb 3 Sn strands for ITER fusion magnet with newly developed high field composite MgB 2 PIT conductors has shown that at 14 Tesla MgB 2 possesses better properties than any of the Nb 3 Sn conductors produced. In this paper the potential of MgB 2 conductors is examined for tokamaks of both the conventional ITER type and a Spherical Tokamak geometry. In each case MgB 2 is considered as a conductor for a range of field coil applications and the potential for operation at both liquid helium and liquid hydrogen temperatures is considered. Further research plans concerning the application of MgB 2 conductors for Fusion Island are also considered

  9. Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

    Science.gov (United States)

    Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M

    2009-03-04

    We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  10. Conductance switching in Ag2S devices fabricated by in situ sulfurization

    International Nuclear Information System (INIS)

    Morales-Masis, M; Molen, S J van der; Hesselberth, M B; Ruitenbeek, J M van; Fu, W T

    2009-01-01

    We report a simple and reproducible method to fabricate switchable Ag 2 S devices. The α-Ag 2 S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag 2 S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag 2 S, increasing the Ag + ion mobility. The as-fabricated Ag 2 S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  11. Advances in high voltage power switching with GTOs

    International Nuclear Information System (INIS)

    Podlesak, T.F.

    1990-01-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

  12. The ATLAS semi-conductor tracker operation and performance

    International Nuclear Information System (INIS)

    Robinson, D.

    2013-01-01

    The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The SCT was installed and commissioned within ATLAS in 2007, and has been used to exploit fully the physics potential of the LHC since the first proton–proton collisions at 7 TeV were delivered in 2009. In this paper, its operational status throughout data taking up to the end of 2011 is presented, and its tracking performance is reviewed. -- Highlights: ► The operation and performance of the ATLAS Semi-Conductor Tracker (SCT) is reviewed. ► More than 99% of the SCT strips have remained operational in all data taking periods so far. ► Tracking performance indicators have met or exceeded design specifications. ► Radiation damage effects match closely expectations from delivered fluence.

  13. Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

    Science.gov (United States)

    Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

    2018-06-01

    An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

  14. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit includes a light emitting diode which from time to time illuminates a photo-transistor, the photo-transistor serving when its output reaches a predetermined value to operate a trigger circuit. In order to allow for aging of the components, the current flow through the diode is increased when the output from the transistor falls below a known level. Conveniently, this is achieved by having a transistor in parallel with the diode, and turning the transistor off when the output from the phototransistor becomes too low. The circuit is designed to control the ignition system in an automobile engine.

  15. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device.

    Science.gov (United States)

    Hameed, Waqas; Azmat, Syed Khurram; Ali, Moazzam; Hussain, Wajahat; Mustafa, Ghulam; Ishaque, Muhammad; Ali, Safdar; Ahmed, Aftab; Temmerman, Marleen

    2015-01-01

    Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD) to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9) randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0) the chances of method switching. Compared with women who received free IUCD service (via voucher scheme), the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction.

  16. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device

    Directory of Open Access Journals (Sweden)

    Waqas Hameed

    2015-01-01

    Full Text Available Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9 randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0 the chances of method switching. Compared with women who received free IUCD service (via voucher scheme, the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction.

  17. Study of the switching rate of gas-discharge devices based on the open discharge with counter-propagating electron beams

    International Nuclear Information System (INIS)

    Bokhan, P. A.; Gugin, P. P.; Lavrukhin, M. A.; Zakrevsky, Dm. E.

    2015-01-01

    The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm 2 overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10 12  A/s

  18. Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

    Science.gov (United States)

    Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

    2018-04-01

    In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

  19. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

    Science.gov (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

    2017-07-01

    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  20. Focus on Organic Conductors

    Directory of Open Access Journals (Sweden)

    Shinya Uji, Takehiko Mori and Toshihiro Takahashi

    2009-01-01

    Full Text Available Organic materials are usually thought of as electrical insulators. Progress in chemical synthesis, however, has brought us a rich variety of conducting organic materials, which can be classified into conducting polymers and molecular crystals. Researchers can realize highly conducting molecular crystals in charge-transfer complexes, where suitable combinations of organic electron donor or acceptor molecules with counter ions or other organic molecules provide charge carriers. By means of a kind of chemical doping, the charge-transfer complexes exhibit high electrical conductivity and, thanks to their highly crystalline nature, even superconductivity has been observed. This focus issue of Science and Technology of Advanced Materials is devoted to the research into such 'organic conductors'The first organic metal was (TTF(TCNQ, which was found in 1973 to have high conductivity at room temperature and a metal–insulator transition at low temperatures. The first organic superconductor was (TMTSF2PF6, whose superconductivity under high pressures was reported by J´erome in 1980. After these findings, the research on organic conductors exploded. Hundreds of organic conductors have been reported, among which more than one hundred exhibit superconductivity. Recently, a single-component organic conductor has been found with metallic conductivity down to low temperatures.In these organic conductors, in spite of their simple electronic structures, much new physics has arisen from the low dimensionality. Examples are charge and spin density waves, characteristic metal–insulator transitions, charge order, unconventional superconductivity, superconductor–insulator transitions, and zero-gap conductors with Dirac cones. The discovery of this new physics is undoubtedly derived from the development of many intriguing novel organic conductors. High quality single crystals are indispensable to the precise measurement of electronic states.This focus issue

  1. Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices

    International Nuclear Information System (INIS)

    Thermadam, S. Puthen; Bhagat, S.K.; Alford, T.L.; Sakaguchi, Y.; Kozicki, M.N.; Mitkova, M.

    2010-01-01

    This paper presents a study of Cu diffusion at various temperatures in thin SiO 2 films and the influence of diffusion conditions on the switching of Programmable Metallization Cell (PMC) devices formed from such Cu-doped films. Film composition and diffusion products were analyzed using secondary ion mass spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction and Raman spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10 -3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO 2 network and remains in elemental form after diffusion for the annealing conditions used. PMC resistive memory cells were fabricated with such Cu-diffused SiO 2 films and device performance, including the stability of the switching voltage, is discussed in the context of the material characteristics.

  2. Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

    Science.gov (United States)

    Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

    1986-01-01

    After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

  3. Topological photonic orbital-angular-momentum switch

    Science.gov (United States)

    Luo, Xi-Wang; Zhang, Chuanwei; Guo, Guang-Can; Zhou, Zheng-Wei

    2018-04-01

    The large number of available orbital-angular-momentum (OAM) states of photons provides a unique resource for many important applications in quantum information and optical communications. However, conventional OAM switching devices usually rely on precise parameter control and are limited by slow switching rate and low efficiency. Here we propose a robust, fast, and efficient photonic OAM switch device based on a topological process, where photons are adiabatically pumped to a target OAM state on demand. Such topological OAM pumping can be realized through manipulating photons in a few degenerate main cavities and involves only a limited number of optical elements. A large change of OAM at ˜10q can be realized with only q degenerate main cavities and at most 5 q pumping cycles. The topological photonic OAM switch may become a powerful device for broad applications in many different fields and motivate a topological design of conventional optical devices.

  4. Effect of chemical substitutions on photo-switching properties of 3-hydroxy-picolinic acid studied by ab initio methods

    International Nuclear Information System (INIS)

    Rode, Michał F.; Sobolewski, Andrzej L.

    2014-01-01

    Effect of chemical substitutions to the molecular structure of 3-hydroxy-picolinic acid on photo-switching properties of the system operating on excited-state intramolecular double proton transfer (d-ESIPT) process [M. F. Rode and A. L. Sobolewski, Chem. Phys. 409, 41 (2012)] was studied with the aid of electronic structure theory methods. It was shown that simultaneous application of electron-donating and electron-withdrawing substitutions at certain positions of the molecular frame increases the height of the S 0 -state tautomerization barrier (ensuring thermal stability of isomers) and facilitates a barrierless access to the S 1 /S 0 conical intersection from the Franck-Condon region of the S 1 potential-energy surface. Results of study point to the conclusion that the most challenging issue for practical design of a fast molecular photoswitch based on d-ESIPT phenomenon are to ensure a selectivity of optical excitation of a given tautomeric form of the system

  5. Effect of chemical substitutions on photo-switching properties of 3-hydroxy-picolinic acid studied by ab initio methods

    Science.gov (United States)

    Rode, Michał F.; Sobolewski, Andrzej L.

    2014-02-01

    Effect of chemical substitutions to the molecular structure of 3-hydroxy-picolinic acid on photo-switching properties of the system operating on excited-state intramolecular double proton transfer (d-ESIPT) process [M. F. Rode and A. L. Sobolewski, Chem. Phys. 409, 41 (2012)] was studied with the aid of electronic structure theory methods. It was shown that simultaneous application of electron-donating and electron-withdrawing substitutions at certain positions of the molecular frame increases the height of the S0-state tautomerization barrier (ensuring thermal stability of isomers) and facilitates a barrierless access to the S1/S0 conical intersection from the Franck-Condon region of the S1 potential-energy surface. Results of study point to the conclusion that the most challenging issue for practical design of a fast molecular photoswitch based on d-ESIPT phenomenon are to ensure a selectivity of optical excitation of a given tautomeric form of the system.

  6. Manufacturing and test of 2G-HTS coils for rotating machines: Challenges, conductor requirements, realization

    International Nuclear Information System (INIS)

    Oomen, Marijn; Herkert, Werner; Bayer, Dietmar; Kummeth, Peter; Nick, Wolfgang; Arndt, Tabea

    2012-01-01

    We investigate the use of 2nd-generation High-Temperature Superconductors (2G-HTSs) in the rotors of electrical motors and generators. For these devices the conductor must be wound into robust impregnated coils, which are operated in vacuum at temperatures around 30 K, in strong magnetic fields of about 2T. Differences in thermal contraction between the coil former, conductor constituents, impregnation resin, bandage and heat-sink materials (assembled at room temperature) cause mechanical stresses at operating temperature. Rotating-machine operation adds Lorentz forces and challenging centripetal accelerations up to thousands of g. Second generation-HTS conductors withstand large tensile stresses in axial direction and compression in normal direction. However, shear stresses, axial compression, and tension normal to the conductor can cause degradation in superconducting properties. Such stresses can be mitigated by correct choice of materials, coil lay-out and manufacturing process. A certain stress level will remain, which the conductor must withstand. We have manufactured many impregnated round and race-track coils, using different 2G-HTS conductors, and tested them at temperatures from 25 K to 77 K. Degradation of the superconductor in early coils was traced to the mentioned differences in thermal contraction, and was completely avoided in coils produced later. We will discuss appropriate coil-winding techniques to assure robust and reliable superconductor performance.

  7. Realization of transient memory-loss with NiO-based resistive switching device

    Science.gov (United States)

    Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

    2012-11-01

    A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

  8. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  9. New design of cable-in-conduit conductor for application in future fusion reactors

    Science.gov (United States)

    Qin, Jinggang; Wu, Yu; Li, Jiangang; Liu, Fang; Dai, Chao; Shi, Yi; Liu, Huajun; Mao, Zhehua; Nijhuis, Arend; Zhou, Chao; Yagotintsev, Konstantin A.; Lubkemann, Ruben; Anvar, V. A.; Devred, Arnaud

    2017-11-01

    The China Fusion Engineering Test Reactor (CFETR) is a new tokamak device whose magnet system includes toroidal field, central solenoid (CS) and poloidal field coils. The main goal is to build a fusion engineering tokamak reactor with about 1 GW fusion power and self-sufficiency by blanket. In order to reach this high performance, the magnet field target is 15 T. However, the huge electromagnetic load caused by high field and current is a threat for conductor degradation under cycling. The conductor with a short-twist-pitch (STP) design has large stiffness, which enables a significant performance improvement in view of load and thermal cycling. But the conductor with STP design has a remarkable disadvantage: it can easily cause severe strand indentation during cabling. The indentation can reduce the strand performance, especially under high load cycling. In order to overcome this disadvantage, a new design is proposed. The main characteristic of this new design is an updated layout in the triplet. The triplet is made of two Nb3Sn strands and one soft copper strand. The twist pitch of the two Nb3Sn strands is large and cabled first. The copper strand is then wound around the two superconducting strands (CWS) with a shorter twist pitch. The following cable stages layout and twist pitches are similar to the ITER CS conductor with STP design. One short conductor sample with a similar scale to the ITER CS was manufactured and tested with the Twente Cable Press to investigate the mechanical properties, AC loss and internal inspection by destructive examination. The results are compared to the STP conductor (ITER CS and CFETR CSMC) tests. The results show that the new conductor design has similar stiffness, but much lower strand indentation than the STP design. The new design shows potential for application in future fusion reactors.

  10. Transparent conductor based on aluminum nanomesh

    International Nuclear Information System (INIS)

    Kazarkin, B; Mohammed, A S; Stsiapanau, A; Zhuk, S; Satskevich, Y; Smirnov, A

    2014-01-01

    We report a transparent conductor based on Al nanomesh, which was fabricated through Al anodization and etching processes. The Al anodization was performed at low temperature condition to slow down the anodization rate to achieve the well-controlled thickness of an Al nanomesh. By careful controlling of the anodization process, we can fabricate Al nanomesh transparent conductors with different sheet resistance and optical transparency in the visible spectrum range. We shall show that Al nanomesh transparent conductor is a strong contender for a transparent conductor dominated by ITO

  11. Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

    2016-01-18

    Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

  12. Testing of the 3M Company ACCR Conductor

    Energy Technology Data Exchange (ETDEWEB)

    Stovall, J.P.; RIzy, D.T.; Kisner, R.A.; Deve, H.E. (3M Comp.)

    2010-09-15

    The 3M Company has developed a high-temperature low-sag conductor referred to as Aluminum- Conductor Composite-Reinforced or ACCR. The conductor uses an aluminum metal matrix material to replace the steel in conventional conductors so the core has a lower density and higher conductivity. The objective of this work is to accelerate the commercial acceptance by electric utilities of these new conductor designs by testing four representative conductor classes in controlled conditions. Overhead transmission lines use bare aluminum conductor strands wrapped around a steel core strands to transmit electricity. The typical cable is referred to as aluminum-conductor steel-reinforced (ACSR). The outer strands are aluminum, chosen for its conductivity, low weight, and low cost. The center strand is of steel for the strength required to support the weight without stretching the aluminum due to its ductility. The power density of a transmission corridor has been directly increased by increasing the voltage level. Transmission voltages have increased from 115-kV to 765- kV over the past 80 years. In the United States, further increasing the voltage level is not feasible at this point in time, so in order to further increase the power density of a transmission corridor, conductor designs that increase the current carrying capability have been examined. One of the key limiting factors in the design of a transmission line is the conductor sag which determines the clearance of the conductor above ground or underlying structures needed for electrical safety. Increasing the current carrying capability of a conductor increases the joule heating in the conductor which increases the conductor sag. A conductor designed for high-temperature and lowsag operation requires an engineered modification of the conductor materials. To make an advanced cable, the 3M Company solution has been the development of a composite conductor consisting of Nextel ceramic fibers to replace the steel core and

  13. Assembly for electrical conductivity measurements in the piston cylinder device

    Science.gov (United States)

    Watson, Heather Christine [Dublin, CA; Roberts, Jeffrey James [Livermore, CA

    2012-06-05

    An assembly apparatus for measurement of electrical conductivity or other properties of a sample in a piston cylinder device wherein pressure and heat are applied to the sample by the piston cylinder device. The assembly apparatus includes a body, a first electrode in the body, the first electrode operatively connected to the sample, a first electrical conductor connected to the first electrode, a washer constructed of a hard conducting material, the washer surrounding the first electrical conductor in the body, a second electrode in the body, the second electrode operatively connected to the sample, and a second electrical conductor connected to the second electrode.

  14. Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices.

    Science.gov (United States)

    Du, Haiwei; Wan, Tao; Qu, Bo; Cao, Fuyang; Lin, Qianru; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-06-21

    Metal nanowires (NWs) networks with high conductance have shown potential applications in modern electronic components, especially the transparent electrodes over the past decade. In metal NW networks, the electrical connectivity of nanoscale NW junction can be modulated for various applications. In this work, silver nanowire (Ag NW) networks were selected to achieve the desired functions. The Ag NWs were first synthesized by a classic polyol process, and spin-coated on glass to fabricate transparent electrodes. The as-fabricated electrode showed a sheet resistance of 7.158 Ω □ -1 with an optical transmittance of 79.19% at 550 nm, indicating a comparable figure of merit (FOM, or Φ TC ) (13.55 × 10 -3 Ω -1 ). Then, two different post-treatments were designed to tune the Ag NWs for not only transparent electrode but also for threshold resistive switching (RS) application. On the one hand, the Ag NW film was mechanically pressed to significantly improve the conductance by reducing the junction resistance. On the other hand, an Ag@AgO x core-shell structure was deliberately designed by partial oxidation of Ag NWs through simple ultraviolet (UV)-ozone treatment. The Ag core can act as metallic interconnect and the insulating AgO x shell acts as a switching medium to provide a conductive pathway for Ag filament migration. By fabricating Ag/Ag@AgO x /Ag planar structure, a volatile threshold switching characteristic was observed and an on/off ratio of ∼100 was achieved. This work showed that through different post-treatments, Ag NW network can be engineered for diverse functions, transforming from transparent electrodes to RS devices.

  15. Testing of the 3M Company Composite Conductor

    Energy Technology Data Exchange (ETDEWEB)

    Stovall, John P [ORNL; Rizy, D Tom [ORNL; Kisner, Roger A [ORNL

    2010-10-01

    The 3M Company has developed a high-temperature low-sag conductor referred to as Aluminum-Conductor Composite-Reinforced or ACCR. The conductor uses an aluminum metal matrix material to replace the steel in conventional conductors. The objective of this work is to accelerate the commercial acceptance by electric utilities of this new conductor design by testing four representative conductor classes in controlled conditions. A unique facility called the Powerline Conductor Accelerated Testing (PCAT) Facility was built at ORNL for testing overhead conductors. The PCAT has been uniquely designed for testing overhead bare transmission line conductors at high currents and temperatures after they have been installed and tensioned to the manufacturer's specifications. The ability to operate a transmission line conductor in this manner does not exist elsewhere in the United States. Four classes of ACCR cable designed by the 3M Company have been successfully test at ORNL small, medium, large and small/compact. Based on these and other manufacturer tests, the 3M Company has successfully introduced the ACCR into the commercial market and has completed over twenty installations for utility companies.

  16. A two-dimensional finite element method to calculate the AC loss in superconducting cables, wires and coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Z; Jiang, Y; Pei, R; Coombs, T A [Electronic, Power and Energy Conversion Group, Engineering Department, University of Cambridge, CB2 1PZ (United Kingdom); Ye, L [Department of Electrical Power Engineering, CAU, P. O. Box 210, Beijing 100083 (China); Campbell, A M [Interdisciplinary Research Centre in Superconductivity, University of Cambridge, CB3 0HE (United Kingdom)], E-mail: Zh223@cam.ac.uk

    2008-02-15

    In order to utilize HTS conductors in AC electrical devices, it is very important to be able to understand the characteristics of HTS materials in the AC electromagnetic conditions and give an accurate estimate of the AC loss. A numerical method is proposed in this paper to estimate the AC loss in superconducting conductors including MgB{sub 2} wires and YBCO coated conductors. This method is based on solving a set of partial differential equations in which the magnetic field is used as the state variable to get the current and electric field distributions in the cross sections of the conductors and hence the AC loss can be calculated. This method is used to model a single-element and a multi-element MgB{sub 2} wires. The results demonstrate that the multi-element MgB{sub 2} wire has a lower AC loss than a single-element one when carrying the same current. The model is also used to simulate YBCO coated conductors by simplifying the superconducting thin tape into a one-dimensional region where the thickness of the coated conductor can be ignored. The results show a good agreement with the measurement.

  17. Transparent ceramic photo-optical semiconductor high power switches

    Science.gov (United States)

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  18. A generalized transformation to convert an arbitrary perfect electric conductor into another arbitrary dielectric object

    International Nuclear Information System (INIS)

    Huang Lujun; Zhou Daming; Wang Jian; Li Guanhai; Li Zhifeng; Chen Xiaoshuang; Lu Wei

    2011-01-01

    A generalized transformation is proposed to design an illusion device. The device can reshape an arbitrarily shaped perfect electrical conductor (PEC) into another dielectric object with arbitrary geometry. Such a device can evolve into an ideal invisibility cloak with non-conformal boundaries if the virtual space is filled with air. Furthermore, the validity of our proposed transformation is confirmed by two specific devices. One is to convert a regular polygonal PEC cylinder into a circular dielectric cylinder. Another one is to reshape a circular PEC cylinder into a regular polygonal dielectric cylinder.

  19. Research and Analysis of MEMS Switches in Different Frequency Bands

    Directory of Open Access Journals (Sweden)

    Wenchao Tian

    2018-04-01

    Full Text Available Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1 utilizing combinations of several switches in series; (2 covering a float metal layer on the dielectric layer; (3 using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4 developing MEMS switches using T-match and π-match; (5 designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS technology and reconfigurable MEMS’ surfaces; (6 employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7 selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8 adopting gold alloying with carbon nanotubes (CNTs, hermetic and reliable packaging, and mN-level contact.

  20. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  1. Conductance switching in Ag{sub 2}S devices fabricated by in situ sulfurization

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M; Molen, S J van der; Hesselberth, M B; Ruitenbeek, J M van [Kamerlingh Onnes Laboratorium, Universiteit Leiden, PO Box 9504, 2300 RA Leiden (Netherlands); Fu, W T [Leiden Institute of Chemistry, Gorlaeus Laboratorium, Universiteit Leiden, PO Box 9502, 2300 RA Leiden (Netherlands)], E-mail: ruitenbeek@physics.leidenuniv.nl

    2009-03-04

    We report a simple and reproducible method to fabricate switchable Ag{sub 2}S devices. The {alpha}-Ag{sub 2}S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag{sub 2}S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag{sub 2}S, increasing the Ag{sup +} ion mobility. The as-fabricated Ag{sub 2}S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  2. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  3. The first DC performance test and analysis of CC conductor short sample at ASIPP conductor test facility

    International Nuclear Information System (INIS)

    Shi Yi; Wu Yu; Liu Huajun; Long Feng; Qian Li; Ren Zhibin; Li Shaolei; Liu Bo; Chen Jinglin

    2012-01-01

    Highlights: ► In this study the first DC performance experiments of ITER correction coil conductor short sample have been carried out in ASIPP test facility. ► A CC conductor short sample was fabricated and tested to confirm the capability of this test facility for qualification tests of CC conductors. ► There is no obvious impact of cycling on DC performance measurement. ► Those measured results of current sharing temperature are in agreement with the expected results from strand scaling - Abstract: The first DC performance experiments of ITER correction coil (CC) conductor short sample have been carried out in the conductor test facility of Institute of Plasma Physics, CAS (ASIPP) in January this year. Those experiments aim to investigate the DC performance of ITER CC conductor. The tested conductor short sample is bended as a half circle with the diameter of 270 mm to meet the background magnetic field shape. The half circle part of sample is longer than the final twist pitch. The current sharing temperature (T cs ) in the 3.86 T external magnetic field (B ex ), ≤12 kA could be measured including the critical current (I c ) run. There is no obvious impact of 1000 cycles on DC performance. Those measured T cs results are in agreement with the expected results from strand scaling.

  4. Rf power amplification by energy storage and switching

    International Nuclear Information System (INIS)

    Vernon, W.

    1989-01-01

    This paper reports that during the last decade there have been several suggestions for RF storage and switching schemes. The principle behind these schemes is simply that energy from a source which is on for a long time at moderate power can be stored in a resonant cavity and dumped (switched) in a short time to yield higher power. This is also the basis of SLED which is driving the SLC, but the major difference is in the switching and the proposed power gains. In the case of SLED there is no switch only a phase agile RF source, and the maximum power gain is about a factor of 3. Proposed storage and switching schemes are often based on large ratios of charge to discharge times, say 5 μsec/50 nsec = 100 which could be the power amplification ratio. An early demonstration of the switching of a superconducting cavity was reported. It was observed that a peak power gain of 9 at low power levels with a cold cavity and a room-temperature switch. The switch was a He gas filled tube positioned in the leg of a waveguide T so that a η/2 stub turned into a η/4 stub when the gas broke down and became a good conductor. All switches encountered to date are some variant of this technique; the stubs reflects back an out-of-phase signal which cancels the one from the cavity so that no power escapes while the low-loss dielectric tube is non-conducting

  5. Specifications for conductors and proposed conductor configurations: Milestone M5.3

    CERN Document Server

    Bordini, Bernardo; Dhallé, Marc

    2018-01-01

    This document summarises the specifications of a superconductor suitable to be used in a particle accelerator dipole magnet that can reach a field of 16 Tesla during regular operation. The document reports also on the conductor configuration. These specifications set the performance targets for industrial production requirements at large scale. The document motivates the specifications on one hand by taking a particular magnet baseline design as starting point and by considering the results of various conductor test campaigns carried out at partner institutes.

  6. A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

    KAUST Repository

    Tai, Yanlong; Chen, Tao; Lubineau, Gilles

    2017-01-01

    Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film's structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

  7. A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

    KAUST Repository

    Tai, Yanlong

    2017-08-30

    Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film\\'s structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

  8. Photo-reactive charge trapping memory based on lanthanide complex

    Science.gov (United States)

    Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

    2015-10-01

    Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

  9. EYE CONTROLLED SWITCHING USING CIRCULAR HOUGH TRANSFORM

    OpenAIRE

    Sagar Lakhmani

    2014-01-01

    The paper presents hands free interface between electrical appliances or devices. This technology is intended to replace conventional switching devices for the use of disabled. It is a new way to interact with the electrical or electronic devices that we use in our daily life. The paper illustrates how the movement of eye cornea and blinking can be used for switching the devices. The basic Circle Detection algorithm is used to determine the position of eye. Eye blinking is used...

  10. The ATLAS Semi-Conductor Tracker Operation and Performance

    CERN Document Server

    Robinson, D; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT), is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The SCT was installed and commissioned within ATLAS in 2007, and has been has been used to fully exploit the physics potential of the LHC since the first proton-proton collisions at 7 TeV were delivered in 2009. In this paper, its operational status throughout data taking up to the end of 2011 is presented, and its tracking performance is reviewed.

  11. Launched electrons in plasma opening switches

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

    1989-01-01

    Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

  12. Field and temperature scaling of the critical current density in commercial REBCO coated conductors

    CERN Document Server

    Senatore, Carmine; Bonura, Marco; Kulich, Miloslav; Mondonico, Giorgio

    2016-01-01

    Scaling relations describing the electromagnetic behaviour of coated conductors (CCs) greatly simplify the design of REBCO-based devices. The performance of REBCO CCs is strongly influenced by fabrication route, conductor architecture and materials, and these parameters vary from one manufacturer to the others. In the present work we have examined the critical surface for the current density, Jc(T,B,θ ), of coated conductors from six different manufacturers: American Superconductor Co. (US), Bruker HTS GmbH (Germany), Fujikura Ltd. (Japan), SuNAM Co. Ltd. (Korea), SuperOx ZAO (Russia) and SuperPower Inc. (US). Electrical transport and magnetic measurements were performed at temperatures between 4.2 K and 77 K and in magnetic field up to 19 T. Experiments were conducted at three different orientations of the field with respect to the crystallographic c-axis of the REBCO layer, θ = 0deg , 45deg and 90deg , in order to probe the angular anisotropy of Jc. In spite of the large variability of CCs performance, ...

  13. Manually operated coded switch

    International Nuclear Information System (INIS)

    Barnette, J.H.

    1978-01-01

    The disclosure related to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made

  14. Plasmonic transparent conductors

    Science.gov (United States)

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-09-01

    Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

  15. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    International Nuclear Information System (INIS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  16. Electrochemical energy storage device based on carbon dioxide as electroactive species

    Science.gov (United States)

    Nemeth, Karoly; van Veenendaal, Michel Antonius; Srajer, George

    2013-03-05

    An electrochemical energy storage device comprising a primary positive electrode, a negative electrode, and one or more ionic conductors. The ionic conductors ionically connect the primary positive electrode with the negative electrode. The primary positive electrode comprises carbon dioxide (CO.sub.2) and a means for electrochemically reducing the CO.sub.2. This means for electrochemically reducing the CO.sub.2 comprises a conductive primary current collector, contacting the CO.sub.2, whereby the CO.sub.2 is reduced upon the primary current collector during discharge. The primary current collector comprises a material to which CO.sub.2 and the ionic conductors are essentially non-corrosive. The electrochemical energy storage device uses CO.sub.2 as an electroactive species in that the CO.sub.2 is electrochemically reduced during discharge to enable the release of electrical energy from the device.

  17. Nonvacuum, maskless fabrication of a flexible metal grid transparent conductor by low-temperature selective laser sintering of nanoparticle ink.

    Science.gov (United States)

    Hong, Sukjoon; Yeo, Junyeob; Kim, Gunho; Kim, Dongkyu; Lee, Habeom; Kwon, Jinhyeong; Lee, Hyungman; Lee, Phillip; Ko, Seung Hwan

    2013-06-25

    We introduce a facile approach to fabricate a metallic grid transparent conductor on a flexible substrate using selective laser sintering of metal nanoparticle ink. The metallic grid transparent conductors with high transmittance (>85%) and low sheet resistance (30 Ω/sq) are readily produced on glass and polymer substrates at large scale without any vacuum or high-temperature environment. Being a maskless direct writing method, the shape and the parameters of the grid can be easily changed by CAD data. The resultant metallic grid also showed a superior stability in terms of adhesion and bending. This transparent conductor is further applied to the touch screen panel, and it is confirmed that the final device operates firmly under continuous mechanical stress.

  18. Electron cyclotron resonance plasma photos

    Energy Technology Data Exchange (ETDEWEB)

    Racz, R.; Palinkas, J. [Institute of Nuclear Research (ATOMKI), H-4026 Debrecen, Bem ter 18/c (Hungary); University of Debrecen, H-4010 Debrecen, Egyetem ter 1 (Hungary); Biri, S. [Institute of Nuclear Research (ATOMKI), H-4026 Debrecen, Bem ter 18/c (Hungary)

    2010-02-15

    In order to observe and study systematically the plasma of electron cyclotron resonance (ECR) ion sources (ECRIS) we made a high number of high-resolution visible light plasma photos and movies in the ATOMKI ECRIS Laboratory. This required building the ECR ion source into an open ECR plasma device, temporarily. An 8MP digital camera was used to record photos of plasmas made from Ne, Ar, and Kr gases and from their mixtures. We studied and recorded the effect of ion source setting parameters (gas pressure, gas composition, magnetic field, and microwave power) to the shape, color, and structure of the plasma. The analysis of the photo series gave us many qualitative and numerous valuable physical information on the nature of ECR plasmas.

  19. Electron cyclotron resonance plasma photos

    International Nuclear Information System (INIS)

    Racz, R.; Palinkas, J.; Biri, S.

    2010-01-01

    In order to observe and study systematically the plasma of electron cyclotron resonance (ECR) ion sources (ECRIS) we made a high number of high-resolution visible light plasma photos and movies in the ATOMKI ECRIS Laboratory. This required building the ECR ion source into an open ECR plasma device, temporarily. An 8MP digital camera was used to record photos of plasmas made from Ne, Ar, and Kr gases and from their mixtures. We studied and recorded the effect of ion source setting parameters (gas pressure, gas composition, magnetic field, and microwave power) to the shape, color, and structure of the plasma. The analysis of the photo series gave us many qualitative and numerous valuable physical information on the nature of ECR plasmas.

  20. Surface effects of electrode-dependent switching behavior of resistive random-access memory

    KAUST Repository

    Ke, Jr Jian

    2016-09-26

    The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device\\'s switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.

  1. The CMS conductor

    CERN Document Server

    Horváth, I L; Marti, H P; Neuenschwander, J; Smith, R P; Fabbricatore, P; Musenich, R; Calvo, A; Campi, D; Curé, B; Desirelli, Alberto; Favre, G; Riboni, P L; Sgobba, Stefano; Tardy, T; Sequeira-Lopes-Tavares, S

    2000-01-01

    The Compact Muon Solenoid (CMS) is one of the experiments, which are being designed in the framework of the Large Hadron Collider (LHC) project at CERN, the design field of the CMS magnet is 4 T, the magnetic length is 13 m and the aperture is 6 m. This high magnetic field is achieved by means of a 4 layer, 5 modules superconducting coil. The coil is wound from an Al-stabilized Rutherford type conductor. The nominal current of the magnet is 20 kA at 4.5 K. In the CMS coil the structural function is ensured, unlike in other existing Al-stabilized thin solenoids, both by the Al-alloy reinforced conductor and the external former. In this paper the retained manufacturing process of the 50-km long reinforced conductor is described. In general the Rutherford type cable is surrounded by high purity aluminium in a continuous co-extrusion process to produce the Insert. Thereafter the reinforcement is joined by Electron Beam Welding to the pure Al of the insert, before being machined to the final dimensions. During the...

  2. Isolated converter with synchronized switching leg

    NARCIS (Netherlands)

    2003-01-01

    An amplification device is disclosed providing a way of integrating a switch mode power supply and a class D amplifier (switch mode amplifier). This results in the usage of basically one magnetic component (1), one major energy storage element (4) and switches (20, 30) that are controlled in such a

  3. Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

    Science.gov (United States)

    Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

    2018-01-01

    To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

  4. Switch-attention (aka switch-reference in South-American temporal clauses: facilitating oral transmission

    Directory of Open Access Journals (Sweden)

    Rik van Gijn

    2012-01-01

    Full Text Available Cultures without a written tradition depend entirely on the oral channel to transmit sometimes highly complex information. It is therefore not surprising that in the languages of such cultures linguistic devices evolve that enhance textual coherence, and thus comprehension. These devices should ideally also be economical in terms of morphosyntactic complexity in order to facilitate both production and comprehension. In this paper, I will argue that switch-attention (a term preferred over the traditional switch-reference systems in temporal clauses fulfill these requirements of cohesion and complexity reduction, making them particularly apt for orally transmitting texts. Moreover, switch-reference systems seem to diffuse relatively easily. These features taken together are suggested to be (partly responsible for the widely attested phenomenon in areas without a lengthy written tradition.

  5. Interacting with a Virtual Conductor

    NARCIS (Netherlands)

    Bos, Pieter; Reidsma, Dennis; Ruttkay, Zsófia; Nijholt, Anton; Harper, Richard; Rauterberg, Matthias; Combetto, Marco

    This paper presents a virtual embodied agent that can conduct musicians in a live performance. The virtual conductor conducts music specified by a MIDI file and uses input from a microphone to react to the tempo of the musicians. The current implementation of the virtual conductor can interact with

  6. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyung Hyun; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Na, Kyoung-Hoan, E-mail: khna@dankook.ac.kr [College of Engineering, Dankook University, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2015-10-15

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm–200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, R{sub a}=2.59 nm) on indium–tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current–voltage hysteresis and well over 1 h retentivity, and R{sub OFF}/R{sub ON}≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  7. The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

    Directory of Open Access Journals (Sweden)

    Jun He

    2012-03-01

    Full Text Available By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.

  8. Dynamic state switching in nonlinear multiferroic cantilevers

    Science.gov (United States)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Christian J.; Lofland, Samuel E.; Takeuchi, Ichiro

    2013-03-01

    We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured Pb(Zr0.52Ti0.48) O3 / Fe0.7Ga0.3 cantilevers when a high enough voltage around the resonant frequency of the device is applied on the Pb(Zr0.52Ti0.48) O3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response, which comes from the nonlinear behavior of the cantilever. The reference frequency at which the strain-mediated Fe0.7Ga0.3 based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to the increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices.

  9. Measurement of transverse Jc profiles of coated conductors using a magnetic knife of permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Haenisch, J [Los Alamos National Laboratory; Mueller, F M [Los Alamos National Laboratory; Ashworth, S P [Los Alamos National Laboratory; Coulter, J Y [Los Alamos National Laboratory; Matias, Vlad [Los Alamos National Laboratory

    2008-01-01

    The transverse J{sub c} distribution in YBCO coated conductors was measured non-destructively with high resolution using a 'magnetic knife' made of permanent magnets. The method utilizes the strong depression of J{sub c} in applied magnetic fields. A narrow region of low (including zero) magnetic field, in a surrounding higher field, is moved transversely across the sample in order to reveal the critical-current density distribution. The net resolution of this device is approximately 65 {micro}m, and the J{sub c} resolution is better than 0.5%. A Fourier series inversion process was used to determine the transverse J{sub c} distribution in the sample. The J{sub c} profile was correlated with other sample properties of coated conductors prepared by pulsed laser deposition. Because of its straight-forward and inexpensive design, this J{sub c} imaging technique can be a powerful tool for quality control in coated-conductor production.

  10. Ab initio investigation of the switching behavior of the dithiole-benzene nano-molecular wire

    International Nuclear Information System (INIS)

    Darvish Ganji, M.; Rungger, I.

    2008-01-01

    We report a first-principle study of electrical transport and switching behavior in a single molecular conductor consisting of a dithiole-benzene sandwiched between two Au( 100) electrodes. Ab initio total energy calculations reveal dithiole-benzene molecules on a gold surface, contacted by a monoatomic gold scanning tunneling microscope tip to have two classes of low energy conformations with differing symmetries. Lateral motion of the tip or excitation of the molecule cause it 10 change from one conformation class to the other and to switch between a strongly and a weakly conducting state. Thus, surprisingly. despite their apparent simplicity, these Au-dithiole-benzene -Au nano wires are shown to be electrically bi-stable switches, the smallest two-terminal molecular switches to date. The projected density of states and transmission coefficients are analyzed, and it suggests that the variation of the coupling between the molecule and the electrodes with external bias leads to switching behavior

  11. Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

    Science.gov (United States)

    Wang, Kai; Ou, Hai; Chen, Jun

    2015-06-01

    Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

  12. Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

    International Nuclear Information System (INIS)

    Wang, Kai; Ou, Hai; Chen, Jun

    2015-01-01

    Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The 'smart' pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients. (paper)

  13. High Critical Current Coated Conductors

    Energy Technology Data Exchange (ETDEWEB)

    Paranthaman, M. P.; Selvamanickam, V. (SuperPower, Inc.)

    2011-12-27

    One of the important critical needs that came out of the DOE’s coated conductor workshop was to develop a high throughput and economic deposition process for YBCO. Metal-organic chemical vapor deposition (MOCVD) technique, the most critical steps in high technical micro fabrications, has been widely employed in semiconductor industry for various thin film growth. SuperPower has demonstrated that (Y,Gd)BCO films can be deposited rapid with world record performance. In addition to high critical current density with increased film thickness, flux pinning properties of REBCO films needs to be improved to meet the DOE requirements for various electric-power equipments. We have shown that doping with Zr can result in BZO nanocolumns, but at substantially reduced deposition rate. The primary purpose of this subtask is to develop high current density MOCVD-REBCO coated conductors based on the ion-beam assisted (IBAD)-MgO deposition process. Another purpose of this subtask is to investigate HTS conductor design optimization (maximize Je) with emphasis on stability and protection issues, and ac loss for REBCO coated conductors.

  14. Electronic conductivity of mechanochemically synthesized ...

    Indian Academy of Sciences (India)

    temperature by connecting a series of metal–semiconductor devices whose switch- ... We have realized that the interface between two nanosemi- conductors .... a DC potential (v) which is less than the decomposition potential of the electrolyte.

  15. Substrate type < 111 >-Cu{sub 2}O/<0001 >-ZnO photovoltaic device prepared by photo-assisted electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Zamzuri, Mohd, E-mail: zamzuri@tf.me.tut.ac.jp [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); School of Manufacturing Eng., Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600 Arau, Perlis (Malaysia); Sasano, Junji [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Mohamad, Fariza Binti [Faculty of Electrical & Electronic Eng., University Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor (Malaysia); Izaki, Masanobu [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2015-11-30

    The substrate-type < 0001 > ZnO/<111 > Cu{sub 2}O photovoltaic (PV) device has been constructed by electrodeposition of a < 111 >-p-Cu{sub 2}O layer on an Au(111)/Si wafer substrate followed by stacking the n-ZnO layer by electrodeposition during light irradiation in aqueous solutions. The PV device was fabricated by stacking the Al:ZnO-window by sputtering and the top Al electrode by vacuum evaporation. The < 0001 >-ZnO layer was composed of aggregates of hexagonal columnar grains grown in the direction normal to the surface, and pores could be observed between the ZnO grains at the deposition time last 1800 s. The < 0001 >-ZnO/<111 >-Cu{sub 2}O PV device showed a photovoltaic performance under AM1.5 illumination, and showed the improved short-circuit current density of 5.87 mA cm{sup −2} by stacking the AZO-TCO due to the increase in the diffusion length of the carrier. - Highlights: • Substrate type ZnO/Cu{sub 2}O photovoltaic devices only by electrodeposition • ZnO layer was stacked on the Cu{sub 2}O layer by photo-assisted electrodeposition. • AZO/ZnO/Cu{sub 2}O photovoltaic devices with a short-circuit current density of 5.87 mA cm{sup −2}.

  16. Development of a 20kA current feedthrough using YBCO bulk conductors

    International Nuclear Information System (INIS)

    Maehata, Keisuke; Ishibashi, Kenji; Shintomi, Takakazu; Iwamoto, Akifumi; Maekawa, Ryuji; Mito, Toshiyuki

    2004-01-01

    In the phase II experiment of the Large Helical Device (LHD) of the National Institute for Fusion Science (NIFS), it is planned to operate the helical coils at 1.8 K by employing pressurized superfluid cooling to raise the magnetic field to 4 T with 17.3 kA. It is important to develop a 20kA-class current feedthrough into the 1.8 K region, but it must have a high current capacity and low heat leakage in the maximum magnetic leakage field of 1 T. Rectangle-shaped YBCO bulk conductors measuring 20 mm wide, 140 mm long and 10 mm thick were manufactured from square-pillar-shaped YBCO bulk materials for a 20 kA current. To check the quality of the bulk conductors, internal defects or cracks were detected by carrying out a precise survey of trapped magnetic flux. An assembled 20 kA current feedthrough was mounted in the λ-plate of a pressurized superfluid cooling cryostat. Experiments of current feeding into the 1.8 K region were carried out by operating the 20 kA current feedthrough. In the experiments, the transport current was kept at 20 kA for longer than 1,200 s. During the 20 kA operation, the current transport section of the YBCO bulk conductors remained in the superconducting state and the voltage drop between the YBCO bulk conductors and the copper electrode was observed to be constant. A contact resistance and the Joule heat generation in the joint region between the YBCO bulk conductors and the copper electrode were obtained as 1.45 nΩ and 0.72 W, respectively in the 20 kA operation. We have demonstrated the feasibility of using a 20 kA current feedthrough for the phase II experiment of the LHD. (author)

  17. Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

    Science.gov (United States)

    Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

    2013-01-01

    The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

  18. Atomic switches: atomic-movement-controlled nanodevices for new types of computing

    International Nuclear Information System (INIS)

    Hino, Takami; Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Nayak, Alpana; Ohno, Takeo; Aono, Masakazu

    2011-01-01

    Atomic switches are nanoionic devices that control the diffusion of metal cations and their reduction/oxidation processes in the switching operation to form/annihilate a metal atomic bridge, which is a conductive path between two electrodes in the on-state. In contrast to conventional semiconductor devices, atomic switches can provide a highly conductive channel even if their size is of nanometer order. In addition to their small size and low on-resistance, their nonvolatility has enabled the development of new types of programmable devices, which may achieve all the required functions on a single chip. Three-terminal atomic switches have also been developed, in which the formation and annihilation of a metal atomic bridge between a source electrode and a drain electrode are controlled by a third (gate) electrode. Three-terminal atomic switches are expected to enhance the development of new types of logic circuits, such as nonvolatile logic. The recent development of atomic switches that use a metal oxide as the ionic conductive material has enabled the integration of atomic switches with complementary metal-oxide-semiconductor (CMOS) devices, which will facilitate the commercialization of atomic switches. The novel characteristics of atomic switches, such as their learning and photosensing abilities, are also introduced in the latter part of this review. (topical review)

  19. Resistive coating for current conductors in cryogenic applications

    International Nuclear Information System (INIS)

    Hirayama, C.; Wagner, G.R.

    1982-01-01

    This invention relates to a resistive or semiconducting coating for use on current conductors in cryogenic applications. This includes copper-clad superconductor wire, copper wire used for stabilizing superconductor magnets, and for hyperconductors. The coating is a film of cuprous sulfide (Cu2S) that has been found not to degrade the properties of the conductors. It is very adherent to the respective conductors and satisfies the mechanical, thermal and electrical requirements of coatings for the conductors

  20. Charge transport through molecular switches

    International Nuclear Information System (INIS)

    Jan van der Molen, Sense; Liljeroth, Peter

    2010-01-01

    We review the fascinating research on charge transport through switchable molecules. In the past decade, detailed investigations have been performed on a great variety of molecular switches, including mechanically interlocked switches (rotaxanes and catenanes), redox-active molecules and photochromic switches (e.g. azobenzenes and diarylethenes). To probe these molecules, both individually and in self-assembled monolayers (SAMs), a broad set of methods have been developed. These range from low temperature scanning tunneling microscopy (STM) via two-terminal break junctions to larger scale SAM-based devices. It is generally found that the electronic coupling between molecules and electrodes has a profound influence on the properties of such molecular junctions. For example, an intrinsically switchable molecule may lose its functionality after it is contacted. Vice versa, switchable two-terminal devices may be created using passive molecules ('extrinsic switching'). Developing a detailed understanding of the relation between coupling and switchability will be of key importance for both future research and technology. (topical review)

  1. Charge transport through molecular switches

    Energy Technology Data Exchange (ETDEWEB)

    Jan van der Molen, Sense [Kamerlingh Onnes Laboratorium, Leiden University, Niels Bohrweg 2, 2333 CA Leiden (Netherlands); Liljeroth, Peter, E-mail: molen@physics.leidenuniv.n [Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, University of Utrecht, PO Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-07

    We review the fascinating research on charge transport through switchable molecules. In the past decade, detailed investigations have been performed on a great variety of molecular switches, including mechanically interlocked switches (rotaxanes and catenanes), redox-active molecules and photochromic switches (e.g. azobenzenes and diarylethenes). To probe these molecules, both individually and in self-assembled monolayers (SAMs), a broad set of methods have been developed. These range from low temperature scanning tunneling microscopy (STM) via two-terminal break junctions to larger scale SAM-based devices. It is generally found that the electronic coupling between molecules and electrodes has a profound influence on the properties of such molecular junctions. For example, an intrinsically switchable molecule may lose its functionality after it is contacted. Vice versa, switchable two-terminal devices may be created using passive molecules ('extrinsic switching'). Developing a detailed understanding of the relation between coupling and switchability will be of key importance for both future research and technology. (topical review)

  2. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    International Nuclear Information System (INIS)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-01-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  3. Assessment of conductor degradation in the ITER CS insert coil and implications for the ITER conductors

    Science.gov (United States)

    Mitchell, N.

    2007-01-01

    Nb3Sn cable in conduit-type conductors were expected to provide an efficient way of achieving large conductor currents at high field (up to 13 T) combined with good stability to electromagnetic disturbances due to the extensive helium contact area with the strands. Although ITER model coils successfully reached their design performance (Kato et al 2001 Fusion Eng. Des. 56/57 59-70), initial indications (Mitchell 2003 Fusion Eng. Des. 66-68 971-94) that there were unexplained performance shortfalls have been confirmed. Recent conductor tests (Pasztor et al 2004 IEEE Trans. Appl. Supercond. 14 1527-30) and modelling work (Mitchell 2005 Supercond. Sci. Technol. 18 396-404) suggest that the shortfalls are due to a combination of strand bending and filament fracture under the transverse magnetic loads. Using the new model, the extensive database from the ITER CS insert coil has been reassessed. A parametric fit based on a loss of filament area and n (the exponent of the power-law fit to the electric field) combined with a more rigorous consideration of the conductor field gradient has enabled the coil behaviour to be explained much more consistently than in earlier assessments, now fitting the Nb3Sn strain scaling laws when used with measurements of the conductor operating strain, including conditions when the insert coil current (and hence operating strain) were reversed. The coil superconducting performance also shows a fatigue-type behaviour consistent with recent measurements on conductor samples (Martovetsky et al 2005 IEEE Trans. Appl. Supercond. 15 1367-70). The ITER conductor design has already been modified compared to the CS insert, to increase the margin and provide increased resistance to the degradation, by using a steel jacket to provide thermal pre-compression to reduce tensile strain levels, reducing the void fraction from 36% to 33% and increasing the non-copper material by 25%. Test results are not yet available for the new design and performance

  4. Nano- and micro-electromechanical switch dynamics

    International Nuclear Information System (INIS)

    Pulskamp, Jeffrey S; Proie, Robert M; Polcawich, Ronald G

    2013-01-01

    This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes. (paper)

  5. The Autobiographical Photo-textual Devices. Rhetorics and Truth

    Directory of Open Access Journals (Sweden)

    Roberta Coglitore

    2014-05-01

    Full Text Available The case of autobiographical photo-texts is to be analyzed, first of all, as an autobiographical writing that feels the need to express by other means; secondly, as a specific rhetoric practice that chooses the image, next to the word, as a further persuasive force; finally, as a very special case of icono-texts, which uses some variety of the connection between the verbal and the visual. It is not only a matter of analyzing how it works the cooperation between photographs and autobiographical writing, that is, through which connectors – frames, white space, overlays and captions –, but also of understanding what are the functions of the photographs in relation to literature. This is in order to understand what truth is affirmed in the examples chosen: Franca Valeri, Grégoire Bouillier, Roland Barthes, Winfried G. Sebald, Lalla Romano, Jovanotti, Edward Said, Azar Nafisi, Vladimir Nabokov, André Breton, Hannah Höch, Annie Ernaux. Do photographs expose, confirm, add or resist the truth expressed by the literary side? And if narrative expresses the truth and the resistance to the truth of the author himself, what does the photo resist to, while showing?

  6. THE RATIONALE FOR THE USE OF TWO-PHASE SWITCHES FOR THREE-PHASE CONNECTIONS OF DISTRIBUTIVE DEVICE 27.5 KV

    Directory of Open Access Journals (Sweden)

    Yu. Ya. Sheika

    2008-12-01

    Full Text Available On the basis of materials of scientists of Moscow and Petersburg State Universities of C Ways and NIIEFAENERGO Ltd.» the author of this article with additions has considered a practical possibility of us bipolar switches on three-phase connections of distributive device 27,5 кV.

  7. Test of ITER conductors in SULTAN: An update

    International Nuclear Information System (INIS)

    Bruzzone, Pierluigi; Stepanov, Boris; Wesche, Rainer; Herzog, Robert; Calzolaio, Ciro; Vogel, Martin

    2011-01-01

    The ITER Toroidal Field (TF) conductor qualification phase has been carried out by testing short sample prototype conductors in the SULTAN test facility. This phase, started in 2007, has been substantially completed after minor adjustment of the conductor specification and test procedures. All the parties involved in the TF conductor procurement passed the qualification phase. Starting 2010, the samples for TF process qualification phase are tested in SULTAN. A summary of the results for all the ITER Qualification samples and an updated statistics are presented for the V-I and V-T characteristics of the cable-in-conduit conductors (CICC), including Nb 3 Sn and NbTi samples assembled with either a 'bottom joint' or a 'U-bend'. The technical improvements of the test facility are reported, including the enhanced cyclic loading rate and the calibration of the current meter. An outlook of the ITER conductor tests in the coming years is also presented.

  8. Device for dynamic switching of robot control points

    DEFF Research Database (Denmark)

    2015-01-01

    The invention comprises a system for switching between control points of a robotic system involving an industrial robot including a robot arm with a number of joints and provided with a tool interest point movable in a plurality of degrees of freedom.......The invention comprises a system for switching between control points of a robotic system involving an industrial robot including a robot arm with a number of joints and provided with a tool interest point movable in a plurality of degrees of freedom....

  9. Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

    Science.gov (United States)

    Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

    2018-06-01

    Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

  10. Visit to the Russian Production and Assembly Sites in March 2000 (photos obtained from MPI)

    CERN Multimedia

    2000-01-01

    Photo1 - EST electrode production at LPI. Photo2 - EST electrode production at LPI. Photo3 - EST electrode production at LPI. Photo4 - Cold test of EST electrodes at LPI. Photo5 - Cold test of EST electrodes at LPI. Photo6 - The device for cleaning honeycomb mats at JINR. Photo7 - Module assembly at IHEP. Photo8 - Module assembly at IHEP. Photo9 - Module assembly at IHEP. Photo10 - Transport cases for "Molniya" modules (former bomb cases)

  11. Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor.

    Science.gov (United States)

    Wu, Zhongwei; Bai, Sai; Xiang, Jian; Yuan, Zhongcheng; Yang, Yingguo; Cui, Wei; Gao, Xingyu; Liu, Zhuang; Jin, Yizheng; Sun, Baoquan

    2014-09-21

    Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH₃NH₃PbI₃-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.

  12. Photo annealing effect on p-doped inverted organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lafalce, Evan; Toglia, Patrick; Lewis, Jason E.; Jiang, Xiaomei, E-mail: xjiang@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2014-06-28

    We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, which eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.

  13. Flexible, ferroelectric nanoparticle doped polymer dispersed liquid crystal devices for lower switching voltage and nanoenergy generation

    Science.gov (United States)

    Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney

    2018-06-01

    Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.

  14. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  15. High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

    Science.gov (United States)

    Sablon, Kimberly A.; Sergeev, Andrei; Najmaei, Sina; Dubey, Madan

    2017-03-01

    Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible- and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

  16. High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

    Directory of Open Access Journals (Sweden)

    Sablon Kimberly A.

    2017-03-01

    Full Text Available Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs with graphene or two-dimensional (2D semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible- and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

  17. Stability analysis of NbTi-Ta-based high field conductor cooled by pool boiling below 4 K

    International Nuclear Information System (INIS)

    Chen, W.Y.; Alcorn, J.S.; Hsu, Y.H.; Purcell, J.R.

    1980-09-01

    Stability analysis has been performed for cabled NbTi-Ta-based superconductors intended for the high field (12 T) toroidal field coils for a large scale tokamak device such as ETF. Ternary NbTi-Ta was selected as the superconductor because of its superior critical current density at high field as compared to the binary alloy NbTi. The operating temperature was chosen to be 2.5 K or below to optimize the performance of the superconductor. A cabled conductor was selected to minimize the pulsed field losses. The conductor is cooled by pool boiling in a subcooled (approx. 2.5 K, 0.25 atm) bath, or in a superfluid helium (He-II) bath (approx. 1.8 K, 0.02 atm). The analysis was based on numerically simulating the evolution of a normal zone in the conductor. Appropriate superconductor properties and heat transfer characteristics were utilized in the simulation

  18. Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

    DEFF Research Database (Denmark)

    Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

    1974-01-01

    Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

  19. Temperature induced complementary switching in titanium oxide resistive random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Panda, D., E-mail: dpanda@nist.edu [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Simanjuntak, F. M.; Tseng, T.-Y. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-07-15

    On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

  20. Efficiency Evaluation on a CoolMos Switching and IGBT Conducting Multilevel Inverter

    DEFF Research Database (Denmark)

    Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

    2015-01-01

    This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due to the utilizat......This paper deals with a three-level inverter topology in the 3 kW range as an alternative to commonly used three-level topologies. The topology is attractive for having low switching losses due to the utilization of CoolMos switching devices while keeping conduction losses low due...... to the utilization of IGBTs. A proper time delay between the CoolMos and IGBT devices increases the efficiency by 0.2%. Maximum efficiencies of 97.7 % are achieved and less than 0.2 % efficiency degradation is possible with doubled switching frequency. The case temperatures of the switching devices are below 60 ◦C...

  1. Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

    Directory of Open Access Journals (Sweden)

    Deepak Bansal

    2016-01-01

    Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

  2. The microlasertron: An efficient switched-power source of mm wavelength radiation

    International Nuclear Information System (INIS)

    Palmer, R.B.

    1986-12-01

    An extension of W. Willis' ''Switched Power Linac'' is studied. Pulsed laser light falls on a photocathode wire, or wires, within a simple resonant structure. The resulting pulsed electron current between the wire and the structure wall drives the resonant field, and rf energy is extracted in the mm to cm wavelength range. Various geometries are presented, including one consisting of a simple array of parallel wires over a plane conductor. Results from a one-dimensional simulation are presented

  3. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  4. Low ac loss geometries in YBCO coated conductors

    International Nuclear Information System (INIS)

    Duckworth, R.C.; List, F.A.; Paranthaman, M.P.; Rupich, M.W.; Zhang, W.; Xie, Y.Y.; Selvamanickam, V.

    2007-01-01

    Reduction of ac losses in applied ac fields can be accomplished through either the creation of filaments and bridging in YBCO coated conductors or by an assembly of narrow width YBCO tapes. The ac losses for each of these geometries were measured at 77 K in perpendicular ac fields up to 100 mT. Despite physical isolation of the filaments, coupling losses were still present in the samples when compared to the expected hysteretic loss. In addition to filamentary conductors the assembly of stacked YBCO conductor provides an alternative method of ac loss reduction. When compared to a 4-mm wide YBCO coated conductor with a critical current of 60 A, the ac loss in a stack of 2-mm wide YBCO coated conductors with a similar total critical current was reduced. While the reduction in ac loss in a 2-mm wide stack coincided with the reduction in the engineering current density of the conductor, further reduction of ac loss was obtained through the splicing of the 2-mm wide tapes with low resistance solders

  5. Low ac loss geometries in YBCO coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Duckworth, R.C. [Oak Ridge National Laboratory, One Bethel Valley Road, P.O. Box 2008, MS-6305, Oak Ridge, TN 37831-6305 (United States)], E-mail: duckworthrc@ornl.gov; List, F.A.; Paranthaman, M.P. [Oak Ridge National Laboratory, One Bethel Valley Road, P.O. Box 2008, MS-6305, Oak Ridge, TN 37831-6305 (United States); Rupich, M.W.; Zhang, W. [American Superconductor, Two Technology Drive, Westborough, MA 01581 (United States); Xie, Y.Y.; Selvamanickam, V. [SuperPower, 450 Duane Ave, Schenectady, NY 12304 (United States)

    2007-10-01

    Reduction of ac losses in applied ac fields can be accomplished through either the creation of filaments and bridging in YBCO coated conductors or by an assembly of narrow width YBCO tapes. The ac losses for each of these geometries were measured at 77 K in perpendicular ac fields up to 100 mT. Despite physical isolation of the filaments, coupling losses were still present in the samples when compared to the expected hysteretic loss. In addition to filamentary conductors the assembly of stacked YBCO conductor provides an alternative method of ac loss reduction. When compared to a 4-mm wide YBCO coated conductor with a critical current of 60 A, the ac loss in a stack of 2-mm wide YBCO coated conductors with a similar total critical current was reduced. While the reduction in ac loss in a 2-mm wide stack coincided with the reduction in the engineering current density of the conductor, further reduction of ac loss was obtained through the splicing of the 2-mm wide tapes with low resistance solders.

  6. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-06-28

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  7. Performance of a plasma opening switch in positive polarity on Gamble I using flashboard plasma sources

    International Nuclear Information System (INIS)

    Renk, T.J.

    1995-01-01

    The successful development of the Plasma Opening Switch (POS) for inductive storage applications has been largely confined to negative polarity operation. Some models of POS behavior suggest that this is because in a positive polarity coaxial configuration, the weaker magnetic field at the cathode position retards the switch opening process. This article describes experiments in which both conductor radii in the POS region were significantly reduced. Anode- and cathode-side current monitors indicate that voltages greater than open-circuit are generated at the POS position, but there is a significant amount of electron flow out of the POS, depending upon load impedance. Flow impedance analysis indicates that a relatively small gap appears in the POS plasma after switch opening. Switch performance is also compared between flashboard and carbon gun plasma sources, with the latter operated both in positive and negative polarity

  8. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten; Luka-Guth, Katharina; Wieser, Matthias; Lokamani; Wolf, Jannic Sebastian; Helm, Manfred; Gemming, Sibylle; Kerbusch, Jochen; Scheer, Elke; Huhn, Thomas; Erbe, Artur

    2015-01-01

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  9. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten

    2015-04-16

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  10. Temperature behaviour of photo-emissive films. The case of photo-multipliers used in scintillation counters

    International Nuclear Information System (INIS)

    Ardalan, A.H.

    1966-01-01

    This work concerns the changes in the spectral sensitivity of 3 types of normal photo-cathodes (Cs 3 Sb, tri-alkali and bi-alkali without cesium) as a function of temperature. The photo-cathodes of cathodes of commercial photomultipliers (DARIO, E.M.I., R.C.A., A.S.C.O.F.) were used for these tests. The temperature range studied was -25 C to +55 C (except for the bi-alkali photo-cathodes which were tested up to +150 C) and the wave-length range was 3250 to 7000 angstrom. After a brief review of photo-electric effect theories, the experimental device is described and the measurement results presented. Finally, an interpretation of these results is proposed. For the normal range of scintillator emission, i.e. between 3000 and 5000 angstroms (Na I (Tl), plastics, anthracene) the temperature coefficient is always negative: -0.15 % C for Cs 3 Sb and up to -0.5 % C for the most temperature-sensitive photo-cathode. Above 5000 angstrom, the temperature coefficient of Cs 3 Sb films becomes positive: +0.5 % C on the overage. The accuracy of the spectral sensitivity measurements is ±4 % in absolute value and ±1 % in relative value. (author) [fr

  11. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  12. Novel approach for all-optical packet switching in wide-area networks

    Science.gov (United States)

    Chlamtac, Imrich; Fumagalli, Andrea F.; Wedzinga, Gosse

    1998-09-01

    All-optical Wavelength Division Multiplexing (WDM) networks are believed to be a fundamental component in future high speed backbones. However, while wavelength routing made circuit switching in WDM feasible the reality of extant optical technology does not yet provide the necessary devices to achieve individual optical packet switching. This paper proposes to achieve all-optical packet switching in WDM Wide Area Networks (WANs) via a novel technique, called slot routing. Using slot routing, entire slots, each carrying multiple packets on distinct wavelengths, are switched transparently and individually. As a result packets can be optically transmitted and switched in the network using available fast and wavelength non-sensitive devices. The proposed routing technique leads to an optical packet switching solution, that is simple, practical, and unique as it makes it possible to build a WDM all-optical WAN with optical devices based on proven technologies.

  13. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  14. Overcurrent experiments on HTS tape and cable conductor

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Jensen, Kim Høj; Træholt, Chresten

    2001-01-01

    their critical current. In this light, it is important to investigate the response of HTS tapes and cable conductors to overcurrents several times the critical current. A number of experiments have been performed on HTS tapes and cable conductors, with currents up to 20 times the critical current. During...... overcurrent experiments, the voltage, and the temperature were measured as functions of time in order to investigate the dynamic behavior of the HTS tape and cable conductor. After each experiment, damage to the superconductors was assessed by measuring the critical current. Preliminary results show...... that within seconds an HTS tape (critical current=17 A) heats above room temperature with an overcurrent larger than 140 A. Similar overcurrent experiments showed that a HTS cable conductor could sustain damage with overcurrents exceeding 10 times the critical current of the cable conductor....

  15. Challenges and status of ITER conductor production

    International Nuclear Information System (INIS)

    Devred, A; Backbier, I; Bessette, D; Bevillard, G; Gardner, M; Jong, C; Lillaz, F; Mitchell, N; Romano, G; Vostner, A

    2014-01-01

    Taking the relay of the large Hadron collider (LHC) at CERN, ITER has become the largest project in applied superconductivity. In addition to its technical complexity, ITER is also a management challenge as it relies on an unprecedented collaboration of seven partners, representing more than half of the world population, who provide 90% of the components as in-kind contributions. The ITER magnet system is one of the most sophisticated superconducting magnet systems ever designed, with an enormous stored energy of 51 GJ. It involves six of the ITER partners. The coils are wound from cable-in-conduit conductors (CICCs) made up of superconducting and copper strands assembled into a multistage cable, inserted into a conduit of butt-welded austenitic steel tubes. The conductors for the toroidal field (TF) and central solenoid (CS) coils require about 600 t of Nb 3 Sn strands while the poloidal field (PF) and correction coil (CC) and busbar conductors need around 275 t of Nb–Ti strands. The required amount of Nb 3 Sn strands far exceeds pre-existing industrial capacity and has called for a significant worldwide production scale up. The TF conductors are the first ITER components to be mass produced and are more than 50% complete. During its life time, the CS coil will have to sustain several tens of thousands of electromagnetic (EM) cycles to high current and field conditions, way beyond anything a large Nb 3 Sn coil has ever experienced. Following a comprehensive R and D program, a technical solution has been found for the CS conductor, which ensures stable performance versus EM and thermal cycling. Productions of PF, CC and busbar conductors are also underway. After an introduction to the ITER project and magnet system, we describe the ITER conductor procurements and the quality assurance/quality control programs that have been implemented to ensure production uniformity across numerous suppliers. Then, we provide examples of technical challenges that have been

  16. Challenges and status of ITER conductor production

    Science.gov (United States)

    Devred, A.; Backbier, I.; Bessette, D.; Bevillard, G.; Gardner, M.; Jong, C.; Lillaz, F.; Mitchell, N.; Romano, G.; Vostner, A.

    2014-04-01

    Taking the relay of the large Hadron collider (LHC) at CERN, ITER has become the largest project in applied superconductivity. In addition to its technical complexity, ITER is also a management challenge as it relies on an unprecedented collaboration of seven partners, representing more than half of the world population, who provide 90% of the components as in-kind contributions. The ITER magnet system is one of the most sophisticated superconducting magnet systems ever designed, with an enormous stored energy of 51 GJ. It involves six of the ITER partners. The coils are wound from cable-in-conduit conductors (CICCs) made up of superconducting and copper strands assembled into a multistage cable, inserted into a conduit of butt-welded austenitic steel tubes. The conductors for the toroidal field (TF) and central solenoid (CS) coils require about 600 t of Nb3Sn strands while the poloidal field (PF) and correction coil (CC) and busbar conductors need around 275 t of Nb-Ti strands. The required amount of Nb3Sn strands far exceeds pre-existing industrial capacity and has called for a significant worldwide production scale up. The TF conductors are the first ITER components to be mass produced and are more than 50% complete. During its life time, the CS coil will have to sustain several tens of thousands of electromagnetic (EM) cycles to high current and field conditions, way beyond anything a large Nb3Sn coil has ever experienced. Following a comprehensive R&D program, a technical solution has been found for the CS conductor, which ensures stable performance versus EM and thermal cycling. Productions of PF, CC and busbar conductors are also underway. After an introduction to the ITER project and magnet system, we describe the ITER conductor procurements and the quality assurance/quality control programs that have been implemented to ensure production uniformity across numerous suppliers. Then, we provide examples of technical challenges that have been encountered and

  17. Cooling device of superconducting coils. Dispositif de refroidissement de bobinages supraconducteurs

    Energy Technology Data Exchange (ETDEWEB)

    Duthil, R; Lottin, J C

    1985-08-30

    This device is rotating around an horizontal axis. The superconducting coils are contained in a cryogenic enclosure feeded in liquid helium forced circulation. They are related to an electric generator by electric mains each of them comprising a gas exchanger, and an exchanger-evaporator set between the cryogenic device and those exchangers. The exchanger-evaporator is aimed at dissipating the heat arriving by conductors connected to the superconducting coils. According to the invention, the invention includes an annular canalization with horizontal axis in which the connection conductors bathe in liquid helium.

  18. Frequency Dependent Losses in Transmission Cable Conductors

    DEFF Research Database (Denmark)

    Olsen, Rasmus Schmidt; Holbøll, Joachim; Guðmundsdóttir, Unnur Stella

    2011-01-01

    , such as thermal conditions in and around the cable, as well as the heat generated in conductors, screens, armours etc., taking into account proximity and skin effects. The work performed and presented in this paper is concerned with an improved determination of the losses generated in the conductor, by means...... of better calculation of the AC resistance of transmission cable conductors, in particular regarding higher frequencies. In this way, also losses under harmonics can be covered. Furthermore, the model is suitable for modelling of transient attenuation in high voltage cables. The AC resistance is calculated...... based on the current density distribution in different conductor designs by means of the Finite Element Method (FEM). The obtained results and methods are compared to available standards (IEC publication 60287-1-1)....

  19. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    International Nuclear Information System (INIS)

    Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

    2016-01-01

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  20. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Barangi, Mahmood, E-mail: barangi@umich.edu; Erementchouk, Mikhail; Mazumder, Pinaki [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2121 (United States)

    2016-08-21

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  1. Radiation sensitive solid state devices

    International Nuclear Information System (INIS)

    Shannon, J.M.; Ralph, J.E.

    1975-01-01

    A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections. (auth)

  2. Assessment of sodium conductor distribution cable

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-06-01

    The study assesses the barriers and incentives for using sodium conductor distribution cable. The assessment considers environmental, safety, energy conservation, electrical performance and economic factors. Along with all of these factors considered in the assessment, the sodium distribution cable system is compared to the present day alternative - an aluminum conductor system. (TFD)

  3. Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

    Science.gov (United States)

    Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

    2018-01-01

    In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

  4. Heavy-duty explosively operated pulsed opening and closing switches

    International Nuclear Information System (INIS)

    Peterson, D.R.; Price, J.H.; Upshaw, J.L.; Weldon, W.F.; Zowarka, R.C.; Gully, J.H.; Spann, M.L.

    1991-01-01

    This paper discusses improvements to heavy duty, explosively operated, opening and closing switches to reduce component cost, installation cost, and turnaround time without sacrificing reliability. Heavy duty opening and closing switches operated by small explosive charges (50 g or less) are essential to operation of the 60 MJ Balcones power supply. The six independent modules - a 10 MJ homopolar generator (HPG) and a 6 μH storage inductor - can be discharged sequentially, a valuable feature for shaping the current pulse delivered to loads such as high-energy railguns. Each delayed inductor must be isolated from the railgun circuit with a heavy duty closing switch capable of carrying megampere currents to millisecond duration. Similar closing switches are used to crowbar the railgun as the projectile approaches the muzzle: noise reduction, reduction of muzzle arc damage, and reduction of post-launch perturbation of projectile flight. The switches - both opening and closing - are characterized by microhm resistance in the closed state. Current is carried in metallic conductors. Metal-to-metal seams which carry current are maintained in uniform high pressure contact. Efficient switching is crucial to efficient conversion: rotor kinetic energy to stored inductive energy with ∼50% efficiency, stored inductive energy to projectile kinetic energy with ∼30% efficiency. The switches must operate with a precision and repeatability of 10 -5 s, readily achievable with explosives. The opening switches must be structurally and thermally capable of carrying megampere currents for more than 100 ms (∼10 5 C) and develop 10 kV upon opening, stay open for 10 - 2 s, and safely and reliably dissipate megajoules of inductive energy in the event of a fault, a failure of the switch to operate or an attempt to commutate into an open circuit

  5. ELECTRODYNAMIC STABILITY COMPUTATIONS FOR FLEXIBLE CONDUCTORS OF THE AERIAL LINES

    Directory of Open Access Journals (Sweden)

    I. I. Sergey

    2015-01-01

    Full Text Available In aerial transmission lines aluminium multiwire conductors are in use. Owing to their flexible design the electrodynamic effect of short circuit currents may lead to intolerable mutual rendezvous and even cross-whipping of the phase conductors. The increasing motion of the conductors caused by effect of the short-circuit electrodynamic force impulse is accompanied by the dynamic load impact affecting the conductors, insulating and supporting constructions of the aerial lines. Intensity of the short-circuit currents electrodynamic impact on the flexible conductors depends on the short circuit current magnitude. For research into electrodynamic endurance of the conductors of the aerial lines located at the vertices of arbitrary triangle with spans of a large length, the authors assume the conductor analytical model in the form of a flexible tensile thread whose mass is distributed evenly lengthwise the conductor. With this analytical model, by the action of the imposed forces the conductor assumes the form conditioned by the diagram of applied external forces, and resists neither bending nor torsion. The initial conditions calculation task reduces to solving the flexible thread statics equations. The law of motion of the conductor marginal points comes out of the conjoint solution of dynamic equations of the conductor and structural components of the areal electric power lines. Based on the proposed algorithm, the researchers of the Chair of the Electric Power Stations of BNTU developed a software program LINEDYS+, which in its characteristics yields to no foreign analogs, e. g. SAMSEF. To calculate the initial conditions they modified a software program computing the flexible conductor mechanics named MR 21. The conductor short-circuit electrodynamic interaction estimation considers structural elements of the areal lines, ice and wind loads, objective parameters of the short circuit. The software programs are accommodated with the simple and

  6. Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

    Science.gov (United States)

    Prakash, Ravi; Kaur, Davinder

    2018-05-01

    The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

  7. Thin film conductors for self-equalizing cables

    Science.gov (United States)

    Owen, G.; Trutna, W. R.; Orsley, T. J.; Lucia, F.; Daly, C. B.

    2017-10-01

    Self-equalizing cables using hollow conductors with wall thickness less than the skin depth were proposed in 1929. However, they do not appear ever to have been widely used, although the idea has resurfaced and been refined from time to time. In the early 2000's, self-equalizing conductors consisting of solid magnetic steel cores coated with silver were developed by W.L. Gore, and used in their 2.5 Gb/s "Eye-Opener" cables, although higher speed versions never appeared. We have revived the original 1929 idea, proposing to use glass as a solid insulating core. This technology can potentially work at frequencies of many 10's of GHz. Possible uses include short range GHz links such as USB and Thunderbolt, and intra-rack interconnections in data centers. Our feasibility experiments have validated the principle. Copper coated glass fibers can, in principle, be manufactured, but in these tests, the conductors were capillaries internally coated with silver as these are easily obtainable, relatively inexpensive and serve to test the concept. The performance of these experimental twin lead cables corresponds to calculations, confirming the general principle. By calculation, we have compared the performance of cables made from copper-on-insulator conductors to that of similar cables made with solid copper conductors, and verified that copper-on-insulator cables have significantly less frequency dependent loss. We have also made and tested cables with copper on PEEK conductors as surrogates for copper on glass fiber.

  8. Exploring the limits of a very large Nb3Sn conductor: the 80 kA conductor of the ITER toroidal field model coil

    International Nuclear Information System (INIS)

    Duchateau, J.L.; Ciazynski, D.; Guerber, O.; Park, S.H.; Zani, L.

    2003-01-01

    In Phase II experiment of the International Thermonuclear Experimental Reactor (ITER) Toroidal Field Model Coil (TFMC) the operation limits of its 80 kA Nb 3 Sn conductor were explored. To increase the magnetic field on the conductor, the TFMC was tested in presence of another large coil: the EURATOM-LCT coil. Under these conditions the maximum field reached on the conductor, was around 10 tesla. This exploration has been performed at constant current, by progressively increasing the coil temperature and monitoring the coil voltage drop in the current sharing regime. Such an operation was made possible thanks to the very high stability of the conductor. The aim of these tests was to compare the critical properties of the conductor with expectations and assess the ITER TF conductor design. These expectations are based on the documented critical field and temperature dependent properties of the 720 superconducting strands which compose the conductor. In addition the conductor properties are highly dependent on the strain, due to the compression appearing on Nb 3 Sn during the heat treatment of the pancakes and related to the differential thermal compression between Nb 3 Sn and the stainless steel jacket. No precise model exists to predict this strain, which is therefore the main information, which is expected from these tests. The method to deduce this strain from the different tests is presented, including a thermalhydraulic analysis to identify the temperature of the critical point and a careful estimation of the field map across the conductor. The measured strain has been estimated in the range -0.75% to -0.79 %. This information will be taken into account for ITER design and some adjustment of the ITER conductor design is under examination. (authors)

  9. Tuning the resistive switching properties of TiO2-x films

    Science.gov (United States)

    Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.

    2015-03-01

    We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.

  10. Gate Driver Circuit of Power Electronic Switches with Reduced Number of Isolated DC/DC Converter for a Switched Reluctance Motor

    International Nuclear Information System (INIS)

    Memon, A.A.

    2013-01-01

    This paper presents a gate driver circuit for the switching devices used in the asymmetrical converter for a switched reluctance machine with reduced number of isolated dc/dc converters. Isolation required in the gate driver circuit of switching devices is indispensable. For the purpose of isolation different arrangements may be used such as pulse transformers. The dc/dc converter for isolation and powering the gate drive circuits is suitable, cheaper in cost and simple to implement. It is also significant that required number of isolation converters is much less than the switches used in converter. In addition, a simple logic circuit has been presented for producing the gate signals at correct phase sequence which is compared with the gated signals directly obtained from the encoder of an existing machine. (author)

  11. Electromagnetic Pulse Excitation of Finite-Long Dissipative Conductors over a Conducting Ground Plane in the Frequency Domain.

    Energy Technology Data Exchange (ETDEWEB)

    campione, Salvatore [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Warne, Larry K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Schiek, Richard [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Basilio, Lorena I. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    This report details the modeling results for the response of a finite-length dissipative conductor interacting with a conducting ground to a hypothetical nuclear device with the same output energy spectrum as the Fat Man device. We use a frequency-domain method based on transmission line theory and implemented it in a code we call ATLOG - Analytic Transmission Line Over Ground. Select results are compared to ones computed using the circuit simulator Xyce. Intentionally Left Blank

  12. Modelling switching-time effects in high-frequency power conditioning networks

    Science.gov (United States)

    Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

    1979-01-01

    Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

  13. Wiring assembly and method of forming a channel in a wiring assembly for receiving conductor and providing separate regions of conductor contact with the channel

    Energy Technology Data Exchange (ETDEWEB)

    Stelzer, Gerald; Meinke, Rainer; Senti, Mark

    2018-03-06

    A conductor assembly and method for constructing an assembly of the type which, when conducting current, generates a magnetic field or which, in the presence of a changing magnetic field, induces a voltage. In one embodiment the method provides a first insulative layer tubular in shape and including a surface along which a conductor segment may be positioned. A channel formed in the surface of the insulative layer defines a first conductor path and includes a surface of first contour in cross section along a first plane transverse to the conductor path. A segment of conductor having a surface of second contour in cross section is positioned at least partly in the channel and extends along the conductor path. Along the first plane, contact between the conductor surface of second contour and the channel surface of first contour includes at least two separate regions of contact.

  14. Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

    Science.gov (United States)

    Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

    2018-04-01

    We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

  15. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

    Science.gov (United States)

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-02-18

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  16. Multiobjective optimal placement of switches and protective devices in electric power distribution systems using ant colony optimization

    Energy Technology Data Exchange (ETDEWEB)

    Tippachon, Wiwat; Rerkpreedapong, Dulpichet [Department of Electrical Engineering, Kasetsart University, 50 Phaholyothin Rd., Ladyao, Jatujak, Bangkok 10900 (Thailand)

    2009-07-15

    This paper presents a multiobjective optimization methodology to optimally place switches and protective devices in electric power distribution networks. Identifying the type and location of them is a combinatorial optimization problem described by a nonlinear and nondifferential function. The multiobjective ant colony optimization (MACO) has been applied to this problem to minimize the total cost while simultaneously minimize two distribution network reliability indices including system average interruption frequency index (SAIFI) and system interruption duration index (SAIDI). Actual distribution feeders are used in the tests, and test results have shown that the algorithm can determine the set of optimal nondominated solutions. It allows the utility to obtain the optimal type and location of devices to achieve the best system reliability with the lowest cost. (author)

  17. The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device

    International Nuclear Information System (INIS)

    Liu Zi-Yu; Zhang Pei-Jian; Meng Yang; Li Dong; Meng Qing-Yu; Li Jian-Qi; Zhao Hong-Wu

    2012-01-01

    The I—V characteristics of In 2 O 3 :SnO 2 /TiO 2 /In 2 O 3 :SnO 2 junctions with different interfacial barriers are investigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Filamentary model in resistive switching materials

    Science.gov (United States)

    Jasmin, Alladin C.

    2017-12-01

    The need for next generation computer devices is increasing as the demand for efficient data processing increases. The amount of data generated every second also increases which requires large data storage devices. Oxide-based memory devices are being studied to explore new research frontiers thanks to modern advances in nanofabrication. Various oxide materials are studied as active layers for non-volatile memory. This technology has potential application in resistive random-access-memory (ReRAM) and can be easily integrated in CMOS technologies. The long term perspective of this research field is to develop devices which mimic how the brain processes information. To realize such application, a thorough understanding of the charge transport and switching mechanism is important. A new perspective in the multistate resistive switching based on current-induced filament dynamics will be discussed. A simple equivalent circuit of the device gives quantitative information about the nature of the conducting filament at different resistance states.

  19. Thin film conductors for self-equalizing cables

    Directory of Open Access Journals (Sweden)

    G. Owen

    2017-10-01

    Full Text Available Self-equalizing cables using hollow conductors with wall thickness less than the skin depth were proposed in 1929. However, they do not appear ever to have been widely used, although the idea has resurfaced and been refined from time to time. In the early 2000’s, self-equalizing conductors consisting of solid magnetic steel cores coated with silver were developed by W.L. Gore, and used in their 2.5 Gb/s “Eye-Opener” cables, although higher speed versions never appeared. We have revived the original 1929 idea, proposing to use glass as a solid insulating core. This technology can potentially work at frequencies of many 10’s of GHz. Possible uses include short range GHz links such as USB and Thunderbolt, and intra-rack interconnections in data centers. Our feasibility experiments have validated the principle. Copper coated glass fibers can, in principle, be manufactured, but in these tests, the conductors were capillaries internally coated with silver as these are easily obtainable, relatively inexpensive and serve to test the concept. The performance of these experimental twin lead cables corresponds to calculations, confirming the general principle. By calculation, we have compared the performance of cables made from copper-on-insulator conductors to that of similar cables made with solid copper conductors, and verified that copper-on-insulator cables have significantly less frequency dependent loss. We have also made and tested cables with copper on PEEK conductors as surrogates for copper on glass fiber.

  20. LTS and HTS high current conductor development for DEMO

    International Nuclear Information System (INIS)

    Bruzzone, Pierluigi; Sedlak, Kamil; Uglietti, Davide; Bykovsky, Nikolay; Muzzi, Luigi; De Marzi, Gainluca; Celentano, Giuseppe; Della Corte, Antonio; Turtù, Simonetta; Seri, Massimo

    2015-01-01

    Highlights: • Design and R&D for DEMO TF conductors. • Wind&react vs. react&wind options for Nb_3Sn high grade TF conductors. • Progress in the manufacture of short length Nb_3Sn proptotypes. • Design and prototype manufacture for high current HTS cabled conductors. - Abstract: The large size of the magnets for DEMO calls for very large operating current in the forced flow conductor. A plain extrapolation from the superconductors in use for ITER is not adequate to fulfill the technical and cost requirements. The proposed DEMO TF magnets is a graded winding using both Nb_3Sn and NbTi conductors, with operating current of 82 kA @ 13.6 T peak field. Two Nb_3Sn prototypes are being built in 2014 reflecting the two approaches suggested by CRPP (react&wind method) and ENEA (wind&react method). The Nb_3Sn strand (overall 200 kg) has been procured at technical specification similar to ITER. Both the Nb_3Sn strand and the high RRR, Cr plated copper wire (400 kg) have been delivered. The cabling trials are carried out at TRATOS Cavi using equipment relevant for long length production. The completion of the manufacture of the two 20 m long prototypes is expected in the end of 2014 and their test is planned in 2015 at CRPP. In the scope of a long term technology development, high current HTS conductors are built at CRPP and ENEA. A DEMO-class prototype conductor is developed and assembled at CRPP: it is a flat cable composed of 20 twisted stacks of coated conductor tape soldered into copper shells. The 10 kA conductor developed at ENEA consists of stacks of coated conductor tape inserted into a slotted and twisted Al core, with a central cooling channel. Samples have been manufactured in industrial environment and the scalability of the process to long production lengths has been proven.

  1. Conductors for commercial MRI magnets beyond NbTi: requirements and challenges

    Science.gov (United States)

    Parizh, Michael; Lvovsky, Yuri; Sumption, Michael

    2017-01-01

    Magnetic resonance imaging (MRI), a powerful medical diagnostic tool, is the largest commercial application of superconductivity. The superconducting magnet is the largest and most expensive component of an MRI system. The magnet configuration is determined by competing requirements including optimized functional performance, patient comfort, ease of siting in a hospital environment, minimum acquisition and lifecycle cost including service. In this paper, we analyze conductor requirements for commercial MRI magnets beyond traditional NbTi conductors, while avoiding links to a particular magnet configuration or design decisions. Potential conductor candidates include MgB2, ReBCO and BSCCO options. The analysis shows that no MRI-ready non-NbTi conductor is commercially available at the moment. For some conductors, MRI specifications will be difficult to achieve in principle. For others, cost is a key barrier. In some cases, the prospects for developing an MRI-ready conductor are more favorable, but significant developments are still needed. The key needs include the development of, or significant improvements in: (a) conductors specifically designed for MRI applications, with form-fit-and-function readily integratable into the present MRI magnet technology with minimum modifications. Preferably, similar conductors should be available from multiple vendors; (b) conductors with improved quench characteristics, i.e. the ability to carry significant current without damage while in the resistive state; (c) insulation which is compatible with manufacturing and refrigeration technologies; (d) dramatic increases in production and long-length quality control, including large-volume conductor manufacturing technology. In-situ MgB2 is, perhaps, the closest to meeting commercial and technical requirements to become suitable for commercial MRI. Conductor technology is an important, but not the only, issue in introduction of HTS/MgB2 conductor into commercial MRI magnets. These

  2. Reversible switching in self-assembled monolayers of azobenzene thiolates on Au (111) probed by threshold photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Heinemann, Nils, E-mail: heinemann@physik.uni-kiel.de [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, Leibnizstr. 19, 24098 Kiel (Germany); Grunau, Jan; Leissner, Till; Andreyev, Oleksiy; Kuhn, Sonja; Jung, Ulrich [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, Leibnizstr. 19, 24098 Kiel (Germany); Zargarani, Dordaneh; Herges, Rainer [Otto-Diels-Institut fuer Organische Chemie, Christian-Albrechts-Universitaet zu Kiel, Otto-Hahn-Platz 4, 24098 Kiel (Germany); Magnussen, Olaf; Bauer, Michael [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, Leibnizstr. 19, 24098 Kiel (Germany)

    2012-06-19

    Highlights: Black-Right-Pointing-Pointer Photoelectron spectroscopy of liquid phase prepared SAMs of azobenzene derivative. Black-Right-Pointing-Pointer Photo-induced reversible switching in densely packed SAM is monitored. Black-Right-Pointing-Pointer Maximum density of switched molecules in SAM is derived from photoemission data. Black-Right-Pointing-Pointer Switching reaction only enabled at defects sites within the molecular layer. - Abstract: The reversible photo- and thermally activated isomerization of the molecular switch 3-(4-(4-Hexyl-phenylazo)-phenoxy)-propane-1-thiol (ABT, short for AzoBenzeneThiol) deposited by self-assembly from solution on Au (111) was studied using laser-based photoelectron spectroscopy. Differences in the molecular dipole moment characteristic for the trans and the cis isomer of ABT were monitored via changes in the sample work function, accessible by detection of the threshold energy for photoemission. A quantitative analysis of our data shows that the fraction of molecules within the densely packed monolayer that undergoes a switching process is of the order of 1%. This result indicates the relevance of substrate and film defects required to overcome the steric or electronic hindrance of the isomerization reaction in a densely packed monolayer.

  3. The phenomenon of voltage controlled switching in disordered superconductors

    International Nuclear Information System (INIS)

    Ghosh, Sanjib; De Munshi, D

    2014-01-01

    The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device. (paper)

  4. Polyaniline-based memristive microdevice with high switching rate and endurance

    Science.gov (United States)

    Lapkin, D. A.; Emelyanov, A. V.; Demin, V. A.; Erokhin, V. V.; Feigin, L. A.; Kashkarov, P. K.; Kovalchuk, M. V.

    2018-01-01

    Polyaniline (PANI) based memristive devices have emerged as promising candidates for hardware implementation of artificial synapses (the key components of neuromorphic systems) due to their high flexibility, low cost, solution processability, three-dimensional stacking capability, and biocompatibility. Here, we report on a way of the significant improvement of the switching rate and endurance of PANI-based memristive devices. The reduction of the PANI active channel dimension leads to the increase in the resistive switching rate by hundreds of times in comparison with the conventional one. The miniaturized memristive device was shown to be stable within at least 104 cyclic switching events between high- and low-conductive states with a retention time of at least 103 s. The obtained results make PANI-based memristive devices potentially widely applicable in neuromorphic systems.

  5. Design of force-cooled conductors for large fusion magnets

    International Nuclear Information System (INIS)

    Dresner, L.; Lue, J.W.

    1977-01-01

    One type of conductor under consideration for tokamak toroidal field (TF) magnets is a cable-in-conduit cooled by supercritical helium in forced convection. The main problem is designing such force-cooled conductors (fcc) is to maintain adequate stability while keeping the pumping power tolerably low. The transit time of the helium through a coil is many minutes. Since recovery of the conductor from a thermomechanical perturbation takes on the order of tens of milliseconds, for purposes of calculation, the inventory of helium available to promote recovery is finite. This means that a large enough perturbation will quench the conductor. We can then judge the stability of a fcc by the maximum perturbation of some specified type against which the conductor is stable, i.e., can still return to the superconducting state. The simplest type of perturbation is a sudden, uniform heat input over the entire length of the conductor. The maximum, sudden, uniform heat input per unit volume of metal ΔH is called the ''stability margin.''

  6. Recent advances in column switching sample preparation in bioanalysis.

    Science.gov (United States)

    Kataoka, Hiroyuki; Saito, Keita

    2012-04-01

    Column switching techniques, using two or more stationary phase columns, are useful for trace enrichment and online automated sample preparation. Target fractions from the first column are transferred online to a second column with different properties for further separation. Column switching techniques can be used to determine the analytes in a complex matrix by direct sample injection or by simple sample treatment. Online column switching sample preparation is usually performed in combination with HPLC or capillary electrophoresis. SPE or turbulent flow chromatography using a cartridge column and in-tube solid-phase microextraction using a capillary column have been developed for convenient column switching sample preparation. Furthermore, various micro-/nano-sample preparation devices using new polymer-coating materials have been developed to improve extraction efficiency. This review describes current developments and future trends in novel column switching sample preparation in bioanalysis, focusing on innovative column switching techniques using new extraction devices and materials.

  7. Multifunctional devices based on SnO2@rGO-coated fibers for human motion monitoring, ethanol detection, and photo response

    Science.gov (United States)

    Mi, Qing; Wang, Qi; Zang, Siyao; Chai, Zhaoer; Zhang, Jinnan; Ren, Xiaomin

    2018-05-01

    In this study, we developed a multifunctional device based on SnO2@rGO-coated fibers utilizing plasma treatment, dip coating, and microwave irradiation in sequence, and finally realized highly sensitive human motion monitoring, relatively good ethanol detection, and an obvious photo response. Moreover, the high level of comfort and compactness derived from highly elastic and comfortable fabrics contributes to the long-term availability and test accuracy. As an attempt at multifunctional integration of smart clothing, this work provides an attractive and relatively practical research direction.

  8. Diamagnetic composite material structure for reducing undesired electromagnetic interference and eddy currents in dielectric wall accelerators and other devices

    Science.gov (United States)

    Caporaso, George J.; Poole, Brian R.; Hawkins, Steven A.

    2015-06-30

    The devices, systems and techniques disclosed here can be used to reduce undesired effects by magnetic field induced eddy currents based on a diamagnetic composite material structure including diamagnetic composite sheets that are separated from one another to provide a high impedance composite material structure. In some implementations, each diamagnetic composite sheet includes patterned conductor layers are separated by a dielectric material and each patterned conductor layer includes voids and conductor areas. The voids in the patterned conductor layers of each diamagnetic composite sheet are arranged to be displaced in position from one patterned conductor layer to an adjacent patterned conductor layer while conductor areas of the patterned conductor layers collectively form a contiguous conductor structure in each diamagnetic composite sheet to prevent penetration by a magnetic field.

  9. Discharge amplified photo-emission from ultra-thin films applied to tuning work function of transparent electrodes in organic opto-electronic devices

    International Nuclear Information System (INIS)

    Gentle, A.R.; Smith, G.B.; Watkins, S.E.

    2013-01-01

    A novel photoemission technique utilising localised discharge amplification of photo-yield is reported. It enables fast, accurate measurement of work function and ionisation potential for ultra-thin buffer layers vacuum deposited onto single and multilayer transparent conducting electrodes for organic solar cells and OLED's. Work function in most traditional transparent electrodes has to be raised to maximise charge transfer while high transmittance and high conductance must be retained. Results are presented for a range of metal oxide buffers, which achieve this goal. This compact photo-yield spectroscopy tool with its fast turn-around has been a valuable development aid since ionisation potential can vary significantly as deposition conditions change slightly, and as ultra-thin films grow. It has also been useful in tracking the impact of different post deposition cleaning treatments along with some storage and transport protocols, which can adversely reduce ionisation potential and hence subsequent device performance.

  10. Ultrafast optical switching in three-dimensional photonic crystals

    OpenAIRE

    Mazurenko, D.A.

    2004-01-01

    The rapidly expanding research on photonic crystals is driven by potential applications in all-optical switches, optical computers, low-threshold lasers, and holographic data storage. The performance of such devices might surpass the speed of traditional electronics by several orders of magnitude and may result in a true revolution in nanotechnology. The heart of such devices would likely be an optical switching element. This thesis analyzes different regimes of ultrafast all-optical switchin...

  11. Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells

    KAUST Repository

    Melianas, Armantas

    2015-11-05

    In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium.

  12. Flexoelectric effect in an in-plane switching (IPS) liquid crystal cell for low-power consumption display devices

    OpenAIRE

    Kim, Min Su; Bos, Philip J.; Kim, Dong-Woo; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2016-01-01

    Technology of displaying static images in portable displays, advertising panels and price tags pursues significant reduction in power consumption and in product cost. Driving at a low-frequency electric field in fringe-field switching (FFS) mode can be one of the efficient ways to save powers of the recent portable devices, but a serious drop of image-quality, so-called image-flickering, has been found in terms of the coupling of elastic deformation to not only quadratic dielectric effect but...

  13. High current density aluminum stabilized conductor concepts for space applications

    International Nuclear Information System (INIS)

    Huang, X.; Eyssa, Y.M.; Hilal, M.A.

    1989-01-01

    Lightweight conductors are needed for space magnets to achieve values of E/M (energy stored per unit mass) comparable to the or higher than advanced batteries. High purity aluminum stabilized NbTi composite conductors cooled by 1.8 K helium can provide a winding current density up to 15 kA/cm/sup 2/ at fields up to 10 tesla. The conductors are edge cooled with enough surface area to provide recovery following a normalizing disturbance. The conductors are designed so that current diffusion time in the high purity aluminum is smaller than thermal diffusion time in helium. Conductor design, stability and current diffusion are considered in detail

  14. Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

    Science.gov (United States)

    Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

    2013-02-01

    Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

  15. An optically coupled system for quantitative monitoring of MRI-induced RF currents into long conductors.

    Science.gov (United States)

    Zanchi, Marta G; Venook, Ross; Pauly, John M; Scott, Greig C

    2010-01-01

    The currents induced in long conductors such as guidewires by the radio-frequency (RF) field in magnetic resonance imaging (MRI) are responsible for potentially dangerous heating of surrounding media, such as tissue. This paper presents an optically coupled system with the potential to quantitatively measure the RF currents induced on these conductors. The system uses a self shielded toroid transducer and active circuitry to modulate a high speed light-emitting-diode transmitter. Plastic fiber guides the light to a photodiode receiver and transimpedance amplifier. System validation included a series of experiments with bare wires that compared wire tip heating by fluoroptic thermometers with the RF current sensor response. Validations were performed on a custom whole body 64 MHz birdcage test platform and on a 1.5 T MRI scanner. With this system, a variety of phenomena were demonstrated including cable trap current attenuation, lossy dielectric Q-spoiling and even transverse electromagnetic wave node patterns. This system should find applications in studies of MRI RF safety for interventional devices such as pacemaker leads, and guidewires. In particular, variations of this device could potentially act as a realtime safety monitor during MRI guided interventions.

  16. An Optically-Coupled System for Quantitative Monitoring of MRI-Induced RF Currents into Long Conductors

    Science.gov (United States)

    Zanchi, Marta G.; Venook, Ross; Pauly, John M.; Scott, Greig C.

    2010-01-01

    The currents induced in long conductors such as guidewires by the radio frequency (RF) field in magnetic resonance imaging (MRI) are responsible for potentially dangerous heating of surrounding media, such as tissue. This paper presents an optically-coupled system with the potential to quantitatively measure the RF currents induced on these conductors. The system uses a self shielded toroid transducer and active circuitry to modulate a high speed LED transmitter. Plastic fiber guides the light to a photodiode receiver and transimpedance amplifier. System validation included a series of experiments with bare wires that compared wire tip heating by fluoroptic thermometers with the RF current sensor response. Validations were performed on a custom whole body 64 MHz birdcage test platform and on a 1.5T MRI scanner. With this system, a variety of phenomena were demonstrated including cable trap current attenuation, lossy dielectric Q-spoiling and even transverse electromagnetic wave node patterns. This system should find applications in studies of MRI RF safety for interventional devices such as pacemaker leads, and guidewires. In particular, variations of this device could potentially act as a realtime safety monitor during MRI guided interventions. PMID:19758855

  17. Qualification tests for ITER TF conductors in SULTAN

    International Nuclear Information System (INIS)

    Bruzzone, P.; Stepanov, B.; Wesche, R.

    2009-01-01

    From February 2007 to May 2008, 18 short length conductor sections have been tested in SULTAN for design verification and manufacturer qualification of the ITER Toroidal Field (TF) conductor. The test program is focussed on the current sharing temperature, T cs , at the nominal operating conditions, 68 kA current and 11.15 T effective field, which can be fully reproduced in the SULTAN test facility. A broad range of results was observed, with over 2 K difference among the T cs of the conductors. In average, the results are poorer compared to the potential performance estimated from the strand scaling law. The key parameters to mitigate the degradation are not yet clearly identified. The experimental challenges to test conductors with performance degradation are highlighted, including enhanced instrumentation sets, the application of gas flow calorimetry to sense the current sharing power and the post-processing of voltage data to cancel the transverse potential across the cable. The updated schedule of the tests in SULTAN is presented with the short-term action plan for conductor test.

  18. Photoswitching of triplet-triplet annihilation upconversion with photo-generated radical from hexaphenylbiimidazole

    Energy Technology Data Exchange (ETDEWEB)

    Mahmood, Zafar [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Toffoletti, Antonio [Dipartimento di Scienze Chimiche, Università degli Studi di Padova, Via Marzolo, 1, 35131 Padova (Italy); Zhao, Jianzhang, E-mail: zhaojzh@dlut.edu.cn [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Barbon, Antonio, E-mail: antonio.barbon@unipd.it [Dipartimento di Scienze Chimiche, Università degli Studi di Padova, Via Marzolo, 1, 35131 Padova (Italy)

    2017-03-15

    Photoirradiation generated radical from hexaphenyl-biimidazole (HPBI) was used for reversible switching of triplet-triplet annihilation (TTA) upconversion, based on quenching of the photosensitizer triplet state by radical-triplet pair mechanism. Upon 365 nm irradiation, the TTA upconversion in a system composed by a boron-dipyrromethene (BODIPY) derivative and perylene, was completely switched off due to quenching of triplet state of photosensitizer by photogenerated radical from HPBI. The upconversion was recovered after leaving the samples in darkness, due to regeneration of HPBI Dimer. The photophysical process involved in the photochromism and photoswitching of TTA upconversion were studied with steady-state UV–vis absorption spectroscopy, nanosecond transient absorption spectroscopy and EPR spectroscopy. - Graphical abstract: Radical-switched TTA upconversion was achieved with reversible quenching of the triplet state by photo-generated stable organic radical from photochromic hexaphenylbiimidazole.

  19. Fabrication of built-up conductors for large pulsed coils

    International Nuclear Information System (INIS)

    Henke, M.D.; Schermer, R.I.

    1979-01-01

    The development work was performed to provide a low-loss, cryostable conductor capable of carrying 5 kA at 3 T for a 30-MJ coil cycled at 0.35 Hz. Much of the work is relevant to conductor development for other pulsed coils, such as a tokamak induction heating coil. As part of the development process, various conductor configurations were subjected to ac loss measurements, stability tests, electrical resistance measurements, and mechanical load-bearing and mechanical fatigue tests. The result is a conductor that appears to satisfy the design criteria with a considerable safety margin

  20. Research and embedded implementation of Layer 3 switch

    Science.gov (United States)

    Song, Jin; Cheng, Zijing

    2009-12-01

    In the internetworking world, switches and routers have been deployed for workgroup and enterprise connectivity. In the past, switches mainly operated at Layer 2 (they were extensions of bridges), while routers were clearly Layer3 devices. Recently, the line has blurred and switches operating at Layer 3 are becoming more popular. This paper explains the Linux Bridge, Layer 2 Switches, Virtual LAN (VLAN) and Layer 3 Switches. The flow chart of Layer 3 switches and working routine related to Layer 3 switch technology were investigated in detail. This paper presents a new method to implement layer 3 switching that is entirely accomplished in software and is embedded implemented by code transplanting based on PowerPC 460GT platform.

  1. Pulsed power opening switch research at the University of New Mexico

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1987-01-01

    Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (--10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible

  2. Design of optical switches by illusion optics

    International Nuclear Information System (INIS)

    Shoorian, H R; Abrishamian, M S

    2013-01-01

    In this paper, illusion optics theory is employed to form Bragg gratings in an optical waveguide in order to design an optical switch. By using an illusion device at a certain distance from the waveguide, the effective refractive index of the waveguide is remotely modulated, turning the waveguide into a distributed Bragg reflector (DBR) which blocks the waves at a stop band. By removing the illusion device, the waves propagate through the waveguide again. In addition, this method is used to remotely tune DBR optical properties such as resonant frequency and bandwidth in a wide range, which leads to a tunable filter for optical switching applications. Finally, using an illusion device at a distance, an optical cavity is created by inserting defects remotely in a DBR without any physical damage in the primary device. (paper)

  3. Design of optical switches by illusion optics

    Science.gov (United States)

    Shoorian, H. R.; Abrishamian, M. S.

    2013-05-01

    In this paper, illusion optics theory is employed to form Bragg gratings in an optical waveguide in order to design an optical switch. By using an illusion device at a certain distance from the waveguide, the effective refractive index of the waveguide is remotely modulated, turning the waveguide into a distributed Bragg reflector (DBR) which blocks the waves at a stop band. By removing the illusion device, the waves propagate through the waveguide again. In addition, this method is used to remotely tune DBR optical properties such as resonant frequency and bandwidth in a wide range, which leads to a tunable filter for optical switching applications. Finally, using an illusion device at a distance, an optical cavity is created by inserting defects remotely in a DBR without any physical damage in the primary device.

  4. Effect of tip geometry on photo-electron-emission from nanostructures.

    Science.gov (United States)

    Teki, Ranganath; Lu, Toh-Ming; Koratkar, Nikhil

    2009-03-01

    We show in this paper the strong effect of tip geometry on the photo-electron-emission behavior of nanostructured surfaces. To study the effect of tip geometry we compared the photo-emissivity of Ru and Pt nanorods with pyramidal shaped tips to that of carbon nanorods that display flat top (planar) tips. Flat top architectures gave no significant increase in the emission current, while nanostructures with pyramidal shaped tips showed 3-4 fold increase in photo-emission compared to a thin film of the same material. Pyramidal tip geometries increase the effective surface area that is exposed to the incident photon-flux thereby enhancing the photon-collection probability of the system. Such nano-structured surfaces show promise in a variety of device applications such as photo-detectors, photon counters and photo-multiplier tubes.

  5. The Octopus switch

    NARCIS (Netherlands)

    Havinga, Paul J.M.

    2000-01-01

    This chapter1 discusses the interconnection architecture of the Mobile Digital Companion. The approach to build a low-power handheld multimedia computer presented here is to have autonomous, reconfigurable modules such as network, video and audio devices, interconnected by a switch rather than by a

  6. Bipolar resistive switching in different plant and animal proteins

    KAUST Repository

    Bag, A.; Hota, Mrinal Kanti; Mallik, Sandipan B.; Maì ti, Chinmay Kumar

    2014-01-01

    We report bipolar resistive switching phenomena observed in different types of plant and animal proteins. Using protein as the switching medium, resistive switching devices have been fabricated with conducting indium tin oxide (ITO) and Al as bottom and top electrodes, respectively. A clockwise bipolar resistive switching phenomenon is observed in all proteins. It is shown that the resistive switching phenomena originate from the local redox process in the protein and the ion exchange from the top electrode/protein interface.

  7. Bipolar resistive switching in different plant and animal proteins

    KAUST Repository

    Bag, A.

    2014-06-01

    We report bipolar resistive switching phenomena observed in different types of plant and animal proteins. Using protein as the switching medium, resistive switching devices have been fabricated with conducting indium tin oxide (ITO) and Al as bottom and top electrodes, respectively. A clockwise bipolar resistive switching phenomenon is observed in all proteins. It is shown that the resistive switching phenomena originate from the local redox process in the protein and the ion exchange from the top electrode/protein interface.

  8. Single Molecule Electronics and Devices

    Science.gov (United States)

    Tsutsui, Makusu; Taniguchi, Masateru

    2012-01-01

    The manufacture of integrated circuits with single-molecule building blocks is a goal of molecular electronics. While research in the past has been limited to bulk experiments on self-assembled monolayers, advances in technology have now enabled us to fabricate single-molecule junctions. This has led to significant progress in understanding electron transport in molecular systems at the single-molecule level and the concomitant emergence of new device concepts. Here, we review recent developments in this field. We summarize the methods currently used to form metal-molecule-metal structures and some single-molecule techniques essential for characterizing molecular junctions such as inelastic electron tunnelling spectroscopy. We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. We also discuss intriguing issues to be addressed further in the future such as heat and thermoelectric transport in an individual molecule. PMID:22969345

  9. Engineering the switching dynamics of TiO{sub x}-based RRAM with Al doping

    Energy Technology Data Exchange (ETDEWEB)

    Trapatseli, Maria, E-mail: mt3c13@soton.ac.uk; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis [Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ (United Kingdom)

    2016-07-14

    Titanium oxide (TiO{sub x}) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO{sub x} thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

  10. Stackable Form-Factor Peripheral Component Interconnect Device and Assembly

    Science.gov (United States)

    Somervill, Kevin M. (Inventor); Ng, Tak-kwong (Inventor); Torres-Pomales, Wilfredo (Inventor); Malekpour, Mahyar R. (Inventor)

    2013-01-01

    A stackable form-factor Peripheral Component Interconnect (PCI) device can be configured as a host controller or a master/target for use on a PCI assembly. PCI device may comprise a multiple-input switch coupled to a PCI bus, a multiplexor coupled to the switch, and a reconfigurable device coupled to one of the switch and multiplexor. The PCI device is configured to support functionality from power-up, and either control function or add-in card function.

  11. Pulsed laser triggered high speed microfluidic switch

    Science.gov (United States)

    Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

    2008-10-01

    We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

  12. Doped LZO buffer layers for laminated conductors

    Science.gov (United States)

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  13. Low temperature grown GaNAsSb: A promising material for photoconductive switch application

    Energy Technology Data Exchange (ETDEWEB)

    Tan, K. H.; Yoon, S. F.; Wicaksono, S.; Loke, W. K.; Li, D. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Saadsaoud, N.; Tripon-Canseliet, C. [Laboratoire d' Electronique et Electromagnétisme, Pierre and Marie Curie University, 4 Place Jussieu, 75005 Paris (France); Lampin, J. F.; Decoster, D. [Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille, BP 60069, 59652 Villeneuve d' Ascq Cedex (France); Chazelas, J. [Thales Airborne Systems, 2 Avenue Gay Lussac, 78852 Elancourt (France)

    2013-09-09

    We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10{sup 7} Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

  14. Q-switched all-solid-state lasers and application in processing of thin-film solar cell

    Science.gov (United States)

    Liu, Liangqing; Wang, Feng

    2009-08-01

    Societal pressure to renewable clean energy is increasing which is expected to be used as part of an overall strategy to address global warming and oil crisis. Photovoltaic energy conversion devices are on a rapidly accelerating growth path driven by government, of which the costs and prices lower continuously. The next generation thin-film devices are considered to be more efficiency and greatly reduced silicon consumption, resulting in dramatically lower per unit fabrication costs. A key aspect of these devices is patterning large panels to create a monolithic array of series-interconnected cells to form a low current, high voltage module. This patterning is accomplished in three critical scribing processes called P1, P2, and P3. All-solid-state Q-switched lasers are the technology of choice for these processes, due to their advantages of compact configuration, high peak-value power, high repeat rate, excellent beam quality and stability, delivering the desired combination of high throughput and narrow, clean scribes. The end pumped all-solid-state lasers could achieve 1064nm IR resources with pulse width of nanoseconds adopting acoustic-optics Q-switch, shorter than 20ns. The repeat rate is up to 100kHz and the beam quality is close to diffraction limit. Based on this, 532nm green lasers, 355nm UV lasers and 266nm DUV lasers could be carried out through nonlinear frequency conversion. Different wave length lasers are chose to process selective materials. For example, 8-15 W IR lasers are used to scribe the TCO film (P1); 1-5 W green lasers are suitable for scribing the active semiconductor layers (P2) and the back contact layers (P3). Our company, Wuhan Lingyun Photo-electronic System Co. Ltd, has developed 20W IR and 5W green end-pumped Q-switched all-solid-state lasers for thin-film solar industry. Operating in high repeat rates, the speed of processing is up to 2.0 m/s.

  15. Resistive switching characteristics of interfacial phase-change memory at elevated temperature

    Science.gov (United States)

    Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

    2018-04-01

    Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

  16. Resistive switching memories in MoS{sub 2} nanosphere assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xiao-Yong, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China); State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Yin, Zong-You [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Xu, Chun-Xiang, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn; Dai, Jun [State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Hu, Jing-Guo, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)

    2014-01-20

    A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS{sub 2} nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10{sup 4}), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

  17. Mechanical test of the model coil wound with large conductor

    International Nuclear Information System (INIS)

    Hiue, Hisaaki; Sugimoto, Makoto; Nakajima, Hideo; Yasukawa, Yukio; Yoshida, Kiyoshi; Hasegawa, Mitsuru; Ito, Ikuo; Konno, Masayuki.

    1992-09-01

    The high rigidity and strength of the winding pack are required to realize the large superconducting magnet for the fusion reactor. This paper describes mechanical tests concerning the rigidity of the winding pack. Samples were prepared to evaluate the adhesive strength between conductors and insulators. Epoxy and Bismaleimide-Triazine resin (BT resin) were used as the conductor insulator. The stainless steel (SS) 304 bars, whose surface was treated mechanically and chemically, was applied to the modeled conductor. The model coil was would with the model conductors covered with the insulator by grand insulator. A winding model combining 3 x 3 conductors was produced for measuring shearing rigidity. The sample was loaded with pure shearing force at the LN 2 temperature. The bar winding sample, by 8 x 6 conductors, was measured the bending rigidity. These three point bending tests were carried out at room temperature. The pancake winding sample was loaded with compressive forces to measure compressive rigidity of winding. (author)

  18. Apparatus to examine pulsed parallel field losses in large conductors

    International Nuclear Information System (INIS)

    Miller, J.R.; Shen, S.S.

    1977-01-01

    Conductors in tokamak toroidal field coils will be exposed to pulsed fields both parallel and perpendicular to the current direction. These conductors will likely be quite high capacity (10 to 20 kA) and therefore probably will be built up out of smaller units. We have previously published measurements of losses in conductors exposed to a pulsed parallel field, but those experiments necessarily used monolithic conductors of relatively small cross section because the pulse coil, a torus that surrounded the test conductor, was itself small. Here we describe an apparatus that is conceptually similar but has been scaled up to accept conductors of much larger cross section and current capacity. The apparatus consists basically of a superconducting torus that contains a movable spool to allow test samples to be wound inside without unwinding the torus. Details of apparatus design and capabilities are described and preliminary results from tests of the apparatus and from loss measurements using it are reported

  19. Capturing Better Photos and Video with your iPhone

    CERN Document Server

    Thomas, J Dennis; Sammon, Rick

    2011-01-01

    Offers unique advice for taking great photos and videos with your iPod or iPhone!. Packed with unique advice, tips, and tricks, this one-of-a-kind, full-color reference presents step-by-step guidance for taking the best possible quality photos and videos using your iPod or iPhone. Top This unique book walks you through everything from composing a picture, making minor edits, and posting content to using apps to create more dynamic images. You'll quickly put to use this up-to-date coverage of executing both common and uncommon photo and video tasks on your mobile device.: Presents unique advice

  20. Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

    CERN Document Server

    Im, Seongil; Kim, Jae Hoon

    2013-01-01

    Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

  1. Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

    Science.gov (United States)

    Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

    2012-10-02

    Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

  2. Charging device for an electrostatic accelerator

    International Nuclear Information System (INIS)

    Pivovar, L.I.; Khurgin, K.M.

    1983-01-01

    The invention relates to electrostatic accelerators operating in compressed gases and charged by a charge-carrying belt transport device with driving and driven shafts. The aim of the invention is the increase of service life of the device by decreasing deflection of the charge-carrying belt in high-voltage conductor operation at high voltages. Increase of survice life of the device is provided due to the fact that the belt as a whole is more stable and it runs true without slacking shielding rods

  3. Loss and Inductance Investigation in Superconducting Cable Conductors

    DEFF Research Database (Denmark)

    Olsen, Søren Krüger; Tønnesen, Ole; Træholt, Chresten

    1999-01-01

    An important parameter in the design and optimization of a superconducting cable conductor is the control of the current distribution among single tapes and layers. This distribution is to a large degree determined by inductances, since the resistances are low. The self and mutual inductances...... of transport current and current distribution.This presentation is based on a number of experiments performed on prototype superconducting cable conductors. The critical current (1uV/cm) of the conductor at 77K was 1590 A (cable #1) and 3240 A (cable #2) respectively.At an rms current of 2 kA (50 Hz) the AC......-loss was measured on cable #2 to 0.6W/mxphase. This is, to our knowledge, the lowest AC-loss (at 2kA and 77K) of a high temperature superconducting cable conductor reported so far....

  4. Thermonuclear device

    International Nuclear Information System (INIS)

    Suzuki, Shohei

    1988-01-01

    Purpose: To obtain high voltage withstanding current introduction terminals not suffering from the effects of the reduction in the creeping voltage withstanding property by the application of magnetic fields. Constitution: This invention concerns a current introduction terminal for supplying electric current to coils for use in a thermonuclear device, etc. The conductor of the current introduction terminal on the side of vacuum is completely covered with solid insulator. This can eliminate the portion of securing the creeping withstanding voltage. The voltage withstanding characteristics of the solid insulator covering the portion of the conductor on the side of vacuum has a constant value irrespective of the atmosphere or the absence or presence of magnetic fields. Accordingly, the voltage withstanding characteristics of the current introduction terminal on the side of vacuum are determined by the property of the solid insulator, which is not reduced by the application of magnetic fields. (Ikeda, J.)

  5. Bidirectional current triggering in planar devices based on serially connected VO2 thin films using 965 nm laser diode.

    Science.gov (United States)

    Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

    2016-08-08

    By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO2) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO2. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

  6. Rotor position sensor switches currents in brushless dc motors

    Science.gov (United States)

    1965-01-01

    Reluctance switch incorporated in an induction motor is used for sensing rotor position and switching armature circuits in a brushless dc motor. This device drives the solar array system of an unmanned space satellite.

  7. Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics

    International Nuclear Information System (INIS)

    Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar

    2011-01-01

    Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.

  8. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  9. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen

    2016-04-07

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.

  10. Plasma opening switch studies of the applied Bz diode on the LION accelerator

    International Nuclear Information System (INIS)

    Struckman, C.K.; Kusse, B.R.; Meyerhofer, D.D.; Rondeau, G.

    1988-01-01

    The LION accelerator, 1.5 MV, 4Ω, at Cornell University is being used to study the characteristics of an applied B z , or, barrel diode. A plasma opening switch (POS) has been used to shape the voltage pulse seen by the diode. The results of a series of experiments utilizing a POS are presented. The plasma switch geometry is unique, with the plasma source located inside the center conductor of a coaxial transmission line. The switch region is located between the 17 cm radius anode and the 23 cm radius cathode. The switch is constructed of a flashboard plasma source bent into an azimuthally symmetric ring. The axial length of the plasma is only about 2 cm; which is much smaller than the switch radius. The plasma diffuses into the anode-cathode space through axially oriented slots in the anode. The plasma in the switch region has been characterized during static testing (no generator pulse) using Faraday cups. By using time of flight calculations, the Faraday cups give rough estimates of both the plasma density and velocity. Since the generator pulse is so short (100 ns) these static characterizations are indicative of the plasma when the voltage pulse is present. This low density, fast plasma produced the best results for the diode voltage pulse. Results from recently constructed Langmuir probes are also presented

  11. Photoelectric transfer device

    Energy Technology Data Exchange (ETDEWEB)

    Shinomiya, Takuji; Murao, Fumihide

    1987-12-07

    Concerning the conventional photoelectric transfer device, a short-circuit current of photodiodes is switched over with MOS transistors. However, since the backgate voltage of the MOS transistor which is to be used as the switching element, is provided by the source voltage, the leakage current between the backgate and the source/drain/ channel is great and due to this leakage current, errors occur in the photoelectric transfer power output. Especially, when the leakage current of the photodiodes is small, the error becomes large. In order to solve the above problem, this invention aims at offering a photoelectric transfer device which can provide the high precision photoelectric transfer even the short-circuit current generated in the photodiodes is small and proposes a photoelectric transfer device in which the backgate voltage of the MOS transistor switching over the short-circuit current of the photodiodes is made equal to the electric potential of the mutually connected anodes (or cathodes) of the photodiodes. (3 figs)

  12. Electromagnetic Pulse Excitation of Finite-Long Dissipative Conductors over a Conducting Ground Plane in the Time Domain

    Energy Technology Data Exchange (ETDEWEB)

    Campione, Salvatore [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Warne, Larry K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Schiek, Richard [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Basilio, Lorena I. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    This report details the modeling results for the response of a finite-length dissipative conductor interacting with a conducting ground to a hypothetical nuclear device with the same output energy spectrum as the Fat Man device. We use a time-domain method based on transmission line theory that allows accounting for time-varying air conductivities. We implemented such method in a code we call ATLOG - Analytic Transmission Line Over Ground. Results are compared the frequency-domain version of ATLOG previously developed and to the circuit simulator Xyce in some instances. Intentionally Left Blank

  13. A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

    Science.gov (United States)

    Lu, Jing; Tu, Xinglong; Yin, Guilin; Wang, Hui; He, Dannong

    2017-11-09

    In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO 2 /Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO 2 , which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO 2 /Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

  14. Ensuring the Authenticity and Fidelity of Captured Photos Using Trusted Execution and Mobile Application Licensing Capabilities

    OpenAIRE

    Papadamou, Kwstantinos; Samaras, Riginos; Sirivianos, Michael

    2016-01-01

    Mobile devices, which users habitually carry along, have become the main data gateway for the majority of the online services. Any device is able to collect at any time various types of data through its sensors. At the same time, modern identification techniques ask users to send photos of their ID documentation in order to be verified by an online service. Those photos are captured by the device's camera and are considered extremely sensitive. They must be secured and establish that they wil...

  15. Storm on lightning conductors

    International Nuclear Information System (INIS)

    Broomhead, Laurent.

    1980-01-01

    Radioactive lightning conductors using radium or americium 241 sources are compared to Faraday cage and lightning rod. Americium source preparation is shortly described. Efficiency of the different systems is still controversed [fr

  16. Seismic switch for strong motion measurement

    Science.gov (United States)

    Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

    1995-05-30

    A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

  17. Performance Test of Openflow Agent on Openflow Software-Based Mikrotik RB750 Switch

    Directory of Open Access Journals (Sweden)

    Rikie Kartadie

    2016-11-01

    Full Text Available A network is usually developed by several devices such as router, switch etc. Every device forwards data package manipulation with complicated protocol planted in its hardware. An operator is responsible for running configuration either to manage rules or application applied in the network. Human error may occur when device configuration run manually by operator. Some famous vendors, one of them is MikroTik, has also been implementing this OpenFlow on its operation. It provides the implementation of SDN/OpenFlow architecture with affordable cost. The second phase research result showed that switch OF software-based MikroTik resulted higher latency value than both mininet and switch OF software-based OpenWRT. The average gap value of switch OF software-based MikroTik is 2012 kbps lower than the value of switch OF software-based OpenWRT. The average gap value of throughput bandwidth protocol UDP switch OF software-based MikroTik is 3.6176 kBps lower than switch OF software-based OpenWRT and it is 8.68 kBps lower than mininet. The average gap throughput jitter protokol UDP of switch OF software-based MiktoTik is 0.0103ms lower than switch OF software-based OpenWRT and 0.0093ms lower than mininet. 

  18. Tetrathiapentalene-based organic conductors

    International Nuclear Information System (INIS)

    Misaki, Yohji

    2009-01-01

    The synthesis, structure and properties of tetrathiapentalene-based (TTP) organic conductors are reviewed. Among various TTP-type donors, bis-fused tetrathiafulvalene, 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (BDT-TTP) and its derivatives afford many metallic radical cation salts stable down to low temperatures, regardless of the size and shape of the counter anions. Most BDT-TTP conductors have a β-type donor arrangement with almost uniform stacks. Introduction of appropriate substituents results in molecular packing that differs from the β-type. A vinylogous TTP, 2-(1,3-dithiol-2-ylidene)-5-(2-ethanediylidene-1,3-dithiole) -1,3,4,6-tetrathiapentalene (DTEDT) has yielded an organic superconductor (DTEDT) 3 Au(CN) 2 as well as metallic radical cation salts, regardless of the counter anions. (Thio)pyran analogs of TTP, namely (T)PDT-TTP and its derivatives produce molecular conductors with novel molecular arrangements. A TTP analog with reduced π-electron system 2,5-bis(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene (BDA-TTP) has afforded several organic superconductors. Highly conducting molecular metals with unusual oxidation states (+1, +5/3 and neutral) have been developed on the basis of 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (BDT-TTP) derivatives and analogous metal derivatives M(dt) 2 (M = Ni, Au). (topical review)

  19. Tetrathiapentalene-based organic conductors

    Energy Technology Data Exchange (ETDEWEB)

    Misaki, Yohji, E-mail: misaki@eng.ehime-u.ac.j [Department of Applied Chemistry, Graduate School of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 790-8577 (Japan)

    2009-04-15

    The synthesis, structure and properties of tetrathiapentalene-based (TTP) organic conductors are reviewed. Among various TTP-type donors, bis-fused tetrathiafulvalene, 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (BDT-TTP) and its derivatives afford many metallic radical cation salts stable down to low temperatures, regardless of the size and shape of the counter anions. Most BDT-TTP conductors have a {beta}-type donor arrangement with almost uniform stacks. Introduction of appropriate substituents results in molecular packing that differs from the {beta}-type. A vinylogous TTP, 2-(1,3-dithiol-2-ylidene)-5-(2-ethanediylidene-1,3-dithiole) -1,3,4,6-tetrathiapentalene (DTEDT) has yielded an organic superconductor (DTEDT){sub 3}Au(CN){sub 2} as well as metallic radical cation salts, regardless of the counter anions. (Thio)pyran analogs of TTP, namely (T)PDT-TTP and its derivatives produce molecular conductors with novel molecular arrangements. A TTP analog with reduced {pi}-electron system 2,5-bis(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene (BDA-TTP) has afforded several organic superconductors. Highly conducting molecular metals with unusual oxidation states (+1, +5/3 and neutral) have been developed on the basis of 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (BDT-TTP) derivatives and analogous metal derivatives M(dt){sub 2} (M = Ni, Au). (topical review)

  20. Thickness-dependent resistance switching in Cr-doped SrTiO3

    Science.gov (United States)

    Kim, TaeKwang; Du, Hyewon; Kim, Minchang; Seo, Sunae; Hwang, Inrok; Kim, Yeonsoo; Jeon, Jihoon; Lee, Sangik; Park, Baeho

    2012-09-01

    The thickness-dependent bipolar resistance-switching behavior was investigated for epitaxiallygrown Cr-doped SrTiO3 (Cr-STO). All the pristine devices of different thickness showed polarity-independent symmetric current-voltage characteristic and the same space-charge-limited conduction mechanism. However, after a forming process, the resultant conduction and switching phenomena were significantly different depending on the thickness of Cr-STO. The forming process itself was highly influenced by resistance value of each pristine device. Based on our results, we suggest that the resistance-switching mechanism in Cr-STO depends not only on the insulating material's composition or the contact metal as previously reported but also on the initial resistance level determined by the geometry and the quality of the insulating material. The bipolar resistance-switching behaviors in oxide materials of different thicknesses exhibit mixed bulk and interface switching. This indicates that efforts in resistance-based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.

  1. Dynamic correlation of photo-excited electrons: Anomalous levels induced by light–matter coupling

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiankai [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, P.O. Box 800-204, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Huai, Ping, E-mail: huaiping@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, P.O. Box 800-204, Shanghai 201800 (China); Song, Bo, E-mail: bosong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, P.O. Box 800-204, Shanghai 201800 (China)

    2014-04-01

    Nonlinear light–matter coupling plays an important role in many aspects of modern physics, such as spectroscopy, photo-induced phase transition, light-based devices, light-harvesting systems, light-directed reactions and bio-detection. However, excited states of electrons are still unclear for nano-structures and molecules in a light field. Our studies unexpectedly present that light can induce anomalous levels in the electronic structure of a donor–acceptor nanostructure with the help of the photo-excited electrons transferring dynamically between the donor and the acceptor. Furthermore, the physics underlying is revealed to be the photo-induced dynamical spin–flip correlation among electrons. These anomalous levels can significantly enhance the electron current through the nanostructure. These findings are expected to contribute greatly to the understanding of the photo-excited electrons with dynamic correlations, which provides a push to the development and application of techniques based on photosensitive molecules and nanostructures, such as light-triggered molecular devices, spectroscopic analysis, bio-molecule detection, and systems for solar energy conversion.

  2. Conductor development for the Superconducting Super Collider (SSC)

    International Nuclear Information System (INIS)

    Gregory, E.

    1988-01-01

    This review investigates the developments in fine filamentary materials over the last three years and traces how the relations between the magnet requirements and property improvements have fashioned SSC conductor specifications. The review emphasizes factors that affect filament nonuniformity and the overall quality of the product. The elimination of proximity effect-induced coupling in SCC type conductors, by introducing small percentages of manganese into the copper between the filaments, is discussed. Modification of a Fermi kit has produced materials with improved critical current densities. The possibility of using this approach to make conductors for accelerator magnets is assessed

  3. Electrical circuit modeling of conductors with skin effect

    International Nuclear Information System (INIS)

    Kerst, D.W.; Sprott, J.C.

    1986-01-01

    The electrical impedance of a lossy conductor is a complicated function of time (or frequency) because of the skin effect. By solving the diffusion equation for magnetic fields in conductors of several prototypical shapes, the impedance can be calculated as a function of time for a step function of current. The solution suggests an electrical circuit representation that allows calculation of time-dependent voltages and currents of arbitrary waveforms. A technique using an operational amplifier to determine the current in such a conductor by measuring some external voltage is described. Useful analytical approximations to the results are derived

  4. Fast Switching ITO Free Electrochromic Devices

    DEFF Research Database (Denmark)

    Jensen, Jacob; Hösel, Markus; Kim, Inyoung

    2014-01-01

    devices with a response time of 2 s for an optical contrast of 27%. The other design utilizes an embedded silver grid electrode whereupon response times of 0.5 s for a 30% optical contrast are realized when oxidizing the device. A commercially available conductive poly(3,4-ethylenedioxythiophene):poly(4...

  5. A Superconducting Dual-Channel Photonic Switch.

    Science.gov (United States)

    Srivastava, Yogesh Kumar; Manjappa, Manukumara; Cong, Longqing; Krishnamoorthy, Harish N S; Savinov, Vassili; Pitchappa, Prakash; Singh, Ranjan

    2018-06-05

    The mechanism of Cooper pair formation and its underlying physics has long occupied the investigation into high temperature (high-T c ) cuprate superconductors. One of the ways to unravel this is to observe the ultrafast response present in the charge carrier dynamics of a photoexcited specimen. This results in an interesting approach to exploit the dissipation-less dynamic features of superconductors to be utilized for designing high-performance active subwavelength photonic devices with extremely low-loss operation. Here, dual-channel, ultrafast, all-optical switching and modulation between the resistive and the superconducting quantum mechanical phase is experimentally demonstrated. The ultrafast phase switching is demonstrated via modulation of sharp Fano resonance of a high-T c yttrium barium copper oxide (YBCO) superconducting metamaterial device. Upon photoexcitation by femtosecond light pulses, the ultrasensitive cuprate superconductor undergoes dual dissociation-relaxation dynamics, with restoration of superconductivity within a cycle, and thereby establishes the existence of dual switching windows within a timescale of 80 ps. Pathways are explored to engineer the secondary dissociation channel which provides unprecedented control over the switching speed. Most importantly, the results envision new ways to accomplish low-loss, ultrafast, and ultrasensitive dual-channel switching applications that are inaccessible through conventional metallic and dielectric based metamaterials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Texture development of HTS powder-in-tube conductors

    Energy Technology Data Exchange (ETDEWEB)

    Glowacki, B A [IRC in Superconductivity, University of Cambridge, Cambridge (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, Cambridge (United Kingdom)

    1998-10-01

    An overview of the fabrication and electromagnetic properties of high-temperature conductors processed by the powder-in-tube (PIT) technique with reference to texture development and critical anisotropy data is presented. Special emphasis is given to the optimization of the physicochemical and electromagnetic parameters of the multifilamentary and single-filament conductors with superconducting cores of Bi-2223, Tl-1223 and Y-123 superconducting phases. The influence of the multifilamentary and single-filament structures on texture development is discussed. Also, the importance of the local disturbances of the grain alignment and microdefects for the current distribution across and in the plane of the whole conductor is analysed. A comparative study of the critical current anisotropy with field direction in low magnetic fields of Tl-1223 and Bi-2223 conductors manufactured by the PIT technique is presented. For Tl-1223 PIT conductors the anisotropy coefficient shows a very pronounced minimum, followed by a monotonic reduction of anisotropy with the increase of the magnetic field. This is explained in terms of poor grain alignment with weak intergranular superconducting coupling which cause 3D current percolation and also by the demagnetizing effect of the grains and the ceramic core in the PIT Tl-1223 tapes. (author)

  7. Stress-tuned conductor-polymer composite for use in sensors

    Science.gov (United States)

    Martin, James E; Read, Douglas H

    2013-10-22

    A method for making a composite polymeric material with electrical conductivity determined by stress-tuning of the conductor-polymer composite, and sensors made with the stress-tuned conductor-polymer composite made by this method. Stress tuning is achieved by mixing a miscible liquid into the polymer precursor solution or by absorbing into the precursor solution a soluble compound from vapor in contact with the polymer precursor solution. The conductor may or may not be ordered by application of a magnetic field. The composite is formed by polymerization with the stress-tuning agent in the polymer matrix. The stress-tuning agent is removed following polymerization to produce a conductor-polymer composite with a stress field that depends on the amount of stress-tuning agent employed.

  8. Spirally Structured Conductive Composites for Highly Stretchable, Robust Conductors and Sensors.

    Science.gov (United States)

    Wu, Xiaodong; Han, Yangyang; Zhang, Xinxing; Lu, Canhui

    2017-07-12

    Flexible and stretchable electronics are highly desirable for next generation devices. However, stretchability and conductivity are fundamentally difficult to combine for conventional conductive composites, which restricts their widespread applications especially as stretchable electronics. Here, we innovatively develop a new class of highly stretchable and robust conductive composites via a simple and scalable structural approach. Briefly, carbon nanotubes are spray-coated onto a self-adhesive rubber film, followed by rolling up the film completely to create a spirally layered structure within the composites. This unique spirally layered structure breaks the typical trade-off between stretchability and conductivity of traditional conductive composites and, more importantly, restrains the generation and propagation of mechanical microcracks in the conductive layer under strain. Benefiting from such structure-induced advantages, the spirally layered composites exhibit high stretchability and flexibility, good conductive stability, and excellent robustness, enabling the composites to serve as highly stretchable conductors (up to 300% strain), versatile sensors for monitoring both subtle and large human activities, and functional threads for wearable electronics. This novel and efficient methodology provides a new design philosophy for manufacturing not only stretchable conductors and sensors but also other stretchable electronics, such as transistors, generators, artificial muscles, etc.

  9. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

    International Nuclear Information System (INIS)

    Li Yingtao; Long Shibing; Lv Hangbing; Liu Qi; Wang Yan; Zhang Sen; Lian Wentai; Wang Ming; Zhang Kangwei; Xie Hongwei; Liu Ming; Liu Su

    2011-01-01

    The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO 2 -based resistive memory devices has been investigated. Compared with the Cu/ZrO 2 /Pt structure device, by embedding a thin TiO x layer between the ZrO 2 and the Cu top electrode, the Cu/TiO x -ZrO 2 /Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO x -ZrO 2 /Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.

  10. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    International Nuclear Information System (INIS)

    Yeom, Seung-Won; Kim, Tan-Young; Ha, Hyeon Jun; Ju, Byeong-Kwon; Shin, Sang-Chul; Shim, Jae Won; Lee, Yun-Hi

    2016-01-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al 2 O 3 -based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al 2 O 3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al 2 O 3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices. (letter)

  11. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    Science.gov (United States)

    Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

    2016-02-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

  12. Hearing status among Norwegian train drivers and train conductors

    OpenAIRE

    Lie, A.; Skogstad, M.; Johnsen, T. S.; Engdahl, B.; Tambs, K.

    2013-01-01

    Background There is a general perception that train drivers and conductors may be at increased risk of developing noise-induced hearing loss. Aims To study job-related hearing loss among train drivers and train conductors. Methods Audiograms from train drivers and train conductors were obtained from the medical records of the occupational health service of the major Norwegian railway company. The results were compared with audiograms from an internal control group of railway workers and an ex...

  13. Data retention in organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Breemen, A.J.J.M. van; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

    2016-01-01

    Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can

  14. Detection of Tampering Inconsistencies on Mobile Photos

    Science.gov (United States)

    Cao, Hong; Kot, Alex C.

    Fast proliferation of mobile cameras and the deteriorating trust on digital images have created needs in determining the integrity of photos captured by mobile devices. As tampering often creates some inconsistencies, we propose in this paper a novel framework to statistically detect the image tampering inconsistency using accurately detected demosaicing weights features. By first cropping four non-overlapping blocks, each from one of the four quadrants in the mobile photo, we extract a set of demosaicing weights features from each block based on a partial derivative correlation model. Through regularizing the eigenspectrum of the within-photo covariance matrix and performing eigenfeature transformation, we further derive a compact set of eigen demosaicing weights features, which are sensitive to image signal mixing from different photo sources. A metric is then proposed to quantify the inconsistency based on the eigen weights features among the blocks cropped from different regions of the mobile photo. Through comparison, we show our eigen weights features perform better than the eigen features extracted from several other conventional sets of statistical forensics features in detecting the presence of tampering. Experimentally, our method shows a good confidence in tampering detection especially when one of the four cropped blocks is from a different camera model or brand with different demosaicing process.

  15. Topology optimization of ultra-fast nano-photonic switches

    DEFF Research Database (Denmark)

    Elesin, Yuriy; Lazarov, Boyan Stefanov; Jensen, Jakob Søndergaard

    2011-01-01

    The aim of this paper is to demonstrate 1D switch designs obtained by topology optimization which show better performance than the designs considered in the literature. Such devices are non-linear and their performance depends on the efficiency of light-matter interaction. Simple optical switches...

  16. Fixed type incore measuring device

    International Nuclear Information System (INIS)

    Oda, Naotaka; Ito, Hitoshi; Maeda, Hiroyuki

    1998-01-01

    The present invention concerns a measuring device using gamma thermometers to be used in a BWR type reactor. An input switch is inserted to the vicinity of a detection signal input portion of a signal cable connecting GT with the detection signal input portion of a fixed type incore measuring device, and a loop resistance measuring means is disposed to the input switch on the side of the GT by way of a measurement switch. Upon measuring loop resistance, the GT measuring circuit is switched from the detection signal input portion to the loop resistance measuring means by a switching operation of the input switch and the measurement switch thereby enabling to confirm the value of the loop resistance. In addition, the lowering of the voltage in the loop resistance is compensated to confirm the accurate measurement values to be used thereby enabling to measure GT detection signals accurately. A diagnosing means for diagnosing the state of GT based on the results of the measurement for the loop resistance is disposed, and the results are reported to an operator. (N.H.)

  17. N-state random switching based on quantum tunnelling

    Science.gov (United States)

    Bernardo Gavito, Ramón; Jiménez Urbanos, Fernando; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J.; Woodhead, Christopher S.; Missous, Mohamed; Roedig, Utz; Young, Robert J.

    2017-08-01

    In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case. In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.

  18. Hearing status among Norwegian train drivers and train conductors.

    Science.gov (United States)

    Lie, A; Skogstad, M; Johnsen, T S; Engdahl, B; Tambs, K

    2013-12-01

    There is a general perception that train drivers and conductors may be at increased risk of developing noise-induced hearing loss. To study job-related hearing loss among train drivers and train conductors. Audiograms from train drivers and train conductors were obtained from the medical records of the occupational health service of the major Norwegian railway company. The results were compared with audiograms from an internal control group of railway workers and an external reference group of people not occupationally exposed to noise. The monaural hearing threshold level at 4kHz, the mean binaural value at 3, 4 and 6kHz and the prevalence of audiometric notches (≥25 dB at 4kHz) were used for comparison. Audiograms were available for 1567 drivers, 1565 conductors, 4029 railway worker controls and 15 012 people not occupationally exposed to noise. No difference in hearing level or prevalence of audiometric notches was found between study groups after adjusting for age and gender. Norwegian train drivers and conductors have normal hearing threshold levels comparable with those in non-exposed groups.

  19. An overview of current developments in position-sensitive hybrid photon detectors and photo-multiplier tubes

    CERN Document Server

    Gys, Thierry

    1999-01-01

    Current developments in position-sensitive hybrid photon detectors and photo-multiplier tubes have stimulated increased interest from a variety of fields such as astronomy, biomedical imaging and high- energy physics. These devices are sensitive to single photons over a photon energy spectrum defined by the transmission of the optical entrance window and the photo-cathode type. Their spatial resolution ranges from a few millimeters for pad hybrid photon detectors and multi-anode photo-multiplier tubes down to a few tens of microns for pixel hybrid photon detectors and electron-bombarded charge-coupled devices. Basic technological and design aspects are assessed in this paper. (21 refs).

  20. Computer simulation of multiple stability regions in an internally cooled superconducting conductor and of helium replenishment in a bath-cooled conductor

    International Nuclear Information System (INIS)

    Turner, L.R.; Shindler, J.

    1984-09-01

    For upcoming fusion experiments and future fusion reactors, superconducting magnetic have been chosen or considered which employ cooling by pool-boiling HeI, by HeII, and by internally flowing HeI. The choice of conductor and cooling method should be determined in part by the response of the magnet to sudden localized heat pulses of various magnitudes. The paper describes the successful computer simulation of multiple stability in internally cooled conductors, as observed experimentally, using the computer code SSICC. It also describes the modeling of helium replenishment in the cooling channels of a bath-cooled conductor, using the computer code TASS

  1. Molecular dynamics studies of superionic conductors

    International Nuclear Information System (INIS)

    Rahman, A.; Vashishta, P.

    1983-01-01

    Structural and dynamical properties of superionic conductors AgI and CuI are studied using molecular dynamics (MD) techniques. The model of these superionic conductors is based on the use of effective pair potentials. To determine the constants in these potentials, cohesive energy and bulk modulus are used as input: in addition one uses notions of ionic size based on the known crystal structure. Salient features of the MD technique are outlined. Methods of treating long range Coulomb forces are discussed in detail. This includes the manner of doing Ewald sum for MD cells of arbitrary shape. Features that can be incorporated to expedite the MD calculations are also discussed. A novel MD technique which allows for a dynamically controlled variation of the shape and size of the MD cell is described briefly. The development of this novel technique has made it possible to study structural phase transitions in superionic conductors. 68 references, 17 figures, 2 tables

  2. PREFACE: International Symposium on Molecular Conductors: Novel Functions of Molecular Conductors under Extreme Conditions (ISMC 2008)

    Science.gov (United States)

    Takahashi, Toshihiro; Suzumura, Yoshikazu

    2008-02-01

    The International Symposium on Molecular Conductors 2008 (ISMC2008) was held as the second international symposium of the project entitled `Novel Functions of Molecular Conductors under Extreme Conditions', which was supported by the Grant-in-aid for Scientific Research on Priority Areas from the Ministry of Education, Culture, Sports, Science and Technology in Japan. The project lasted from September 2003 to March 2008, and was completed by this symposium held at Okazaki Conference Center, Institute for Molecular Science, Okazaki, Japan (23-25 July 2008), which about 100 scientists attended. During the symposium, five project teams gave summary talks and exciting talks were given on the topics developed recently not only by the members of the project but also by other scientists including invited speakers from abroad, who are doing active research on molecular conductors. It is expected that papers presented in the symposium will give valuable hints for the next step in the research of this field. Therefore the organizers of this symposium decided to publish this proceedings in order to demonstrate these activities, not only for the local community of the project, but also for the broad society of international scientists who are interested in molecular conductors. The editors, who are also the organizers of this symposium, believe that this proceedings provides a significant and relevant contribution to the field of molecular conductors since it is the first time we have published such a proceedings as an electronic journal. We note that all papers published in this volume of Journal of Physics: Conference Series have been peer reviewed by expert referees. Editors made every effort to satisfy the criterion of a proceedings journal published by IOP Publishing. Toshihiro Takahashi and Yoshikazu Suzumura Editors: Toshihiro Takahashi (Gakushuin University) (Chairman) Kazushi Kanoda (University of Tokyo) Seiichi Kagoshima (University of Tokyo) Takehiko Mori (Tokyo

  3. Nano-electromechanical switch-CMOS hybrid technology and its applications.

    Science.gov (United States)

    Lee, B H; Hwang, H J; Cho, C H; Lim, S K; Lee, S Y; Hwang, H

    2011-01-01

    Si-based CMOS technology is facing a serious challenge in terms of power consumption and variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Si-based CMOS devices has shown a theoretical feasibility for power management, but a huge technical gap must be bridged before a nanoscale NEM switch can be realized due to insufficient material development and the limited understanding of its reliability characteristics. These authors propose the use of a multilayer graphene as a nanoscale cantilever material for a nanoscale NEM switchwith dimensions comparable to those of the state-of-the-art Si-based CMOS devices. The optimal thickness for the multilayer graphene (about five layers) is suggested based on an analytical model. Multilayer graphene can provide the highest Young's modulus among the known electrode materials and a yielding strength that allows more than 15% bending. Further research on material screening and device integration is needed, however, to realize the promises of the hybridization of NEM-switch and Si-based CMOS devices.

  4. Design of a Wireless Sensor Module for Monitoring Conductor Galloping of Transmission Lines.

    Science.gov (United States)

    Huang, Xinbo; Zhao, Long; Chen, Guimin

    2016-10-09

    Conductor galloping may cause flashovers and even tower collapses. The available conductor galloping monitoring methods often employ acceleration sensors to measure the conductor translations without considering the conductor twist. In this paper, a new sensor for monitoring conductor galloping of transmission lines based on an inertial measurement unit and wireless communication is proposed. An inertial measurement unit is used for collecting the accelerations and angular rates of a conductor, which are further transformed into the corresponding geographic coordinate frame using a quaternion transformation to reconstruct the galloping of the conductor. Both the hardware design and the software design are described in details. The corresponding test platforms are established, and the experiments show the feasibility and accuracy of the proposed monitoring sensor. The field operation of the proposed sensor in a conductor spanning 734 m also shows its effectiveness.

  5. Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

    Science.gov (United States)

    Kayiranga, Thierry

    Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system

  6. All-thin-film PZT/FeGa Multiferroic Cantilevers and Their Applications in Switching Devices and Parametric Amplification

    Science.gov (United States)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Chris; Lofland, Samuel; Takeuchi, Ichiro

    2014-03-01

    We are investigating the characteristics of microfabricated PZT/FeGa multiferroic cantilevers. The cantilevers can be driven by AC or DC magnetic and electric field, and the device response can be read off as a piezo-induced voltage. We can use the multiple input parameters to operate the devices in a variety of manners for different applications. They include electromagnetic energy harvesting, pulse triggered nonlinear memory devices, and parametrically amplified ME sensors. Due to the competition of anisotropy and Zeeman energies, the mechanical resonant frequency of the cantilevers was found to follow a hysteresis behavior with DC bias magnetic field applied in the cantilever easy axis. We can also control and tune the occurrence of nonlinear bifurcation in the frequency spectrum. The resulting hysteresis in the frequency spectrum can be used to make switching devices, where the input can be DC electric and magnetic fields, as well as pulses of AC fields. We have also demonstrated parametric pumping of the response from an AC magnetic field using frequency-doubled AC electric field. The enhanced equivalent ME coefficient is as high as 10 million V/(cm*Oe), when the pumping voltage is very close to a threshold voltage. The quality factor also increases from 2000 to 80000 with pumping.

  7. Resistivity switching properties of Li-doped ZnO films deposited on LaB_6 electrode

    International Nuclear Information System (INIS)

    Igityan, A.; Kafadaryan, Y.; Aghamalyan, N.; Petrosyan, S.; Badalyan, G.; Vardanyan, V.; Nersisyan, M.; Hovsepyan, R.; Palagushkin, A.; Kryzhanovsky, B.

    2015-01-01

    Current–voltage (I–V) characteristics of Al/p-ZnO:Li/LaB_6 device, measured in voltage sweep mode, show unipolar resistive switching and monostable threshold switching (URS and MTS) for different bias voltage polarities. URS could be transformed to MTS by application of reverse bias voltage. With increasing number of cycles, URS is converted to bipolar resistive switching mode which is lost after certain number of cycles, and device turns into an ordinary resistor. Analysis of linear fitting I–V curves suggests that ohmic and space charge limited current laws are responsible for conductivity mechanism of Al/p-ZnO:Li/LaB_6 device. - Highlights: • Al/p-ZnO:Li/LaB_6 memristive device is fabricated using an e-beam evaporation technique. • Current–voltage (I–V) characteristics are studied. • Type of resistive switching mode depends on the bias voltage polarity and number of switching cycles. • Resistive switching in Al/ZnO:Li/LaB_6 has an interfacial effect. • Ohmic and SCLC laws are responsible for conductivity mechanism of resistive states.

  8. General relativistic galvano-gravitomagnetic effect in current carrying conductors

    International Nuclear Information System (INIS)

    Ahmedov, B.J.

    1998-11-01

    The analogy between general relativity and electromagnetism suggests that there is a galvano-gravitomagnetic effect, which is the gravitational analogue of the Hall effect. This new effect takes place when a current carrying conductor is placed in a gravitomagnetic field and the conduction electrons moving inside the conductor are deflected transversally with respect to the current flow. In connection with this galvano-gravitomagnetic effect, we explore the possibility of using current carrying conductors for detecting the gravitomagnetic field of the Earth. (author)

  9. ECR Plasma Photos

    International Nuclear Information System (INIS)

    Racz, R.; Biri, S.; Palinkas, J.

    2009-01-01

    Complete text of publication follows. In order to observe and study systematically the plasma of electron cyclotron resonance (ECR) ion sources (ECRIS) we made a high number of high-resolution visible light plasma photos and movies in the ATOMKI ECRIS Laboratory. This required building the ECR ion source into an open plasma device, temporarily. An 8MP digital camera was used to record photos of plasmas made from He, methane, N, O, Ne, Ar, Kr, Xe gases and from their mixtures. The effects of the main external setting parameters (gas pressure, gas composition, magnetic field, microwave power, microwave frequency) were studied to the shape, color and structure of the plasma. The double frequency mode (9+14 GHz) was also realized and photos of this special 'star-in-star' shape plasma were recorded. A study was performed to analyze and understand the color of the ECR plasmas. The analysis of the photo series gave us many qualitative and numerous valuable physical information on the nature of ECR plasmas. To our best knowledge our work is the first systematic study of ECR plasmas in the visible light region. When looking in the plasma chamber of an ECRIS we can see an axial image of the plasma (figure 1) in conformity with experimental setup. Most of the quantitative information was obtained through the summarised values of the Analogue Digital Unit (ADU) of pixels. By decreasing the strength of the magnetic trap we clearly observed that the brightness of the central part of the plasma gradually decreases, i.e. the plasma becomes more and more 'empty'. Figure 2 shows a photo series of ECR plasma at decreasing axial magnetic field. The radial size of the plasma increased because of the ascendant resonant zone. By increasing the power of the injected microwave an optimum (or at least saturation) was found in the brightness of the plasma. We found correlation between the gas dosing rates and plasma intensities. When sweeping the frequency of the microwave in a wide region

  10. Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    Science.gov (United States)

    Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

    2013-08-01

    The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

  11. Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    International Nuclear Information System (INIS)

    Gogurla, Narendar; Mondal, Suvra P; Sinha, Arun K; Katiyar, Ajit K; Banerjee, Writam; Ray, Samit K; Kundu, Subhas C

    2013-01-01

    The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems. (paper)

  12. Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

    Science.gov (United States)

    Daniel, Erik Stephen

    In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to

  13. A numerical simulation model of valence-change-based resistive switching

    OpenAIRE

    Marchewka, Astrid

    2017-01-01

    Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

  14. Complete achromatic and robustness electro-optic switch between two integrated optical waveguides

    Science.gov (United States)

    Huang, Wei; Kyoseva, Elica

    2018-01-01

    In this paper, we present a novel design of electro-optic modulator and optical switching device, based on current integrated optics technique. The advantages of our optical switching device are broadband of input light wavelength, robustness against varying device length and operation voltages, with reference to previous design. Conforming to our results of previous paper [Huang et al, phys. lett. a, 90, 053837], the coupling of the waveguides has a hyperbolic-secant shape. while detuning has a sign flip at maximum coupling, we called it as with a sign flip of phase mismatch model. The a sign flip of phase mismatch model can produce complete robust population transfer. In this paper, we enhance this device to switch light intensity controllable, by tuning external electric field based on electro-optic effect.

  15. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Science.gov (United States)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  16. A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

    Science.gov (United States)

    Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

    2018-04-01

    Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Transport ac losses in Bi-2223 multifilamentary tapes - conductor materials aspect

    Energy Technology Data Exchange (ETDEWEB)

    Glowacki, B A [IRC in Superconductivity, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge BC2 3QZ (United Kingdom); Majoros, M [IRC in Superconductivity, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Institute of Electrical Engineering, SAS, Bratislava (Slovakia)

    2000-05-01

    Transport ac losses in technical superconductors based on Bi-2223 tape material are influenced by many parameters. The major factors that define the ac performance of such conductors are the following: the size and number of filaments, their geometrical arrangement in the cross-section of the conductor, the twist pitch length, the resistivity of the matrix, the presence of oxide barriers around the filaments and deformation procedures such as sequential pressing or rolling followed by appropriate thermal treatment. In the present paper the above aspects are addressed from the viewpoint of the materials science of technical conductor design. Transport ac losses at power frequencies in different types of Bi-2223 conductor are presented and analysed. The results of conductor design analysis with respect to the coexistence of the superconductor with other materials in the conductor structure are presented. New concepts for minimization of the transport ac losses are discussed in detail. (author)

  18. Bipolar resistive switching behaviour in Mn 0.03 Zn 0.97 O ...

    Indian Academy of Sciences (India)

    C o n v e r s e l y , t h e r a t i o i n t h e A g / M Z O / L Z M O / p ^+$-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.

  19. Heat switch technology for cryogenic thermal management

    Science.gov (United States)

    Shu, Q. S.; Demko, J. A.; E Fesmire, J.

    2017-12-01

    Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

  20. pH-controlled silicon nanowires fluorescence switch

    International Nuclear Information System (INIS)

    Mu Lixuan; Shi Wensheng; Zhang Taiping; Zhang Hongyan; She Guangwei

    2010-01-01

    Covalently immobilizing photoinduced electronic transfer (PET) fluorophore 3-[N, N-bis(9-anthrylmethyl)amino]-propyltriethoxysilane (DiAN) on the surface of silicon nanowires (SiNWs) resulted a SiNWs-based fluorescence switch. This fluorescence switch is operated by adjustment of the acidity of the environment and exhibits sensitive response to pH at the range from 8 to 10. Such response is attributed to the effect of pH on the PET process. The successful combination of logic switch and SiNWs provides a rational approach to assemble different logic molecules on SiNWs for realization of miniaturization and modularization of switches and logic devices.

  1. A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory

    Science.gov (United States)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Sze, Simon M.; Lee, Jack C.

    2016-04-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

  2. High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

    International Nuclear Information System (INIS)

    Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

    2009-01-01

    A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

  3. Bistable laser device with multiple coupled active vertical-cavity resonators

    Science.gov (United States)

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-08-19

    A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

  4. Recent progress in high-pressure studies on organic conductors

    Directory of Open Access Journals (Sweden)

    Syuma Yasuzuka and Keizo Murata

    2009-01-01

    Full Text Available Recent high-pressure studies of organic conductors and superconductors are reviewed. The discovery of the highest Tc superconductivity among organics under high pressure has triggered the further progress of the high-pressure research. Owing to this finding, various organic conductors with the strong electron correlation were investigated under high pressures. This review includes the pressure techniques using the cubic anvil apparatus, as well as high-pressure studies of the organic conductors up to 10 GPa showing extraordinary temperature and pressure dependent transport phenomena.

  5. Enhanced Mixed Electronic-Ionic Conductors through Cation Ordering

    Energy Technology Data Exchange (ETDEWEB)

    Jacobson, Allan J. [Univ. of Houston, TX (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Grey, Clare [Stony Brook Univ., NY (United States)

    2014-08-31

    The performance of many energy conversion and storage devices depend on the properties of mixed ionic-electronic conducting (miec) materials. Mixed or ambipolar conductors simultaneously transport ions and electrons and provide the critical interface between chemical and electrical energy in devices such as fuel cells, ion transport membranes, and batteries. Enhancements in storage capacity, reversibility, power density and device lifetime all require new materials and a better understanding of the fundamentals of ambipolar conductivity and surface reactivity.The high temperature properties of the ordered perovksites AA’B2O5+x, where A = rare earth ion, Y and B = Ba, Sr were studied. The work was motivated by the high oxygen transport and surface exchange rates observed for members of this class of mixed ionic and electronic conductors. A combined experimental and computational approach, including structural, electrochemical, and transport characterization and modeling was used. The approach attacks the problem simultaneously at global (e.g., neutron diffraction and impedance spectroscopy), local (e.g., pair distribution function, nuclear magnetic resonance) and molecular (ab initio thermokinetic modeling) length scales. The objectives of the work were to understand how the cation and associated anion order lead to exceptional ionic and electronic transport properties and surface reactivity in AA’B2O5+x perovskites. A variety of compounds were studied by X-ray and neutron diffraction, measurements of thermodynamics and transport and theoretically. These included PrBaCo2O5+x and NdBaCo2O5+x, PrBaCo2-xFexO6- δ (x = 0, 0.5, 1.0, 1.5 and 2) and LnBaCoFeO6- δ (Ln = La, Pr, Nd, Sm, Eu and Gd), Sr3YCo4O10.5, YBaMn2O5+x. A0.5A’0.5BO3 (where A=Y, Sc, La, Ce, Pr, Nd, Pm, Sm; A’= Sr

  6. Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

    International Nuclear Information System (INIS)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Kim, Sowon; Choi, Kyung Hyun

    2017-01-01

    Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al 2 O 3 ) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications. (paper)

  7. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  8. Uncertainty quantification in capacitive RF MEMS switches

    Science.gov (United States)

    Pax, Benjamin J.

    Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

  9. A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering

    Science.gov (United States)

    Lee, Tae Sung; Lee, Nam Joo; Abbas, Haider; Hu, Quanli; Yoon, Tae-Sik; Lee, Hyun Ho; Le Shim, Ee; Kang, Chi Jung

    2018-01-01

    The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta2O5 and Ag2Se, which are transition-metal oxide (TMO) and silver chalcogenide, were investigated. The bilayer devices of Ta2O5 deposited on Ag2Se (Ta2O5/Ag2Se) and Ag2Se deposited on Ta2O5 (Ag2Se/Ta2O5) were fabricated for investigation of the RS characteristics by stacking sequence of Ta2O5 and Ag2Se. All operating voltages were applied to the Ag top electrode with the Pt bottom electrode grounded. The Ta2O5/Ag2Se device showed that a negative voltage sweep switched the device from high resistance state (HRS) to low resistance state (LRS) and a positive voltage sweep switched the device from LRS to HRS. On the contrary, for the Ag2Se/Ta2O5 device a positive voltage sweep switched the device from HRS to LRS, and a negative voltage sweep switched it from LRS to HRS. The polarity dependence of RS was attributed to the stacking sequence of Ta2O5 and Ag2Se. In addition, the combined heterostructured device of both bilayer stacks, Ta2O5/Ag2Se and Ag2Se/Ta2O5, exhibited the complementary switching characteristics. By using threshold switching devices, sneak path leakage can be reduced without additional selectors. The bilayer heterostructures of Ta2O5 and Ag2Se have various advantages such as self-compliance, reproducibility and forming-free stable RS. It confirms the possible applications of TMO and silver chalcogenide heterostructures in RRAM.

  10. Temperature dependence of critical current and transport current losses of 4 mm YBCO coated conductors manufactured using nonmagnetic substrate

    Science.gov (United States)

    Kvitkovic, J.; Hatwar, R.; Pamidi, S. V.; Fleshler, S.; Thieme, C.

    2015-12-01

    The temperature dependence of the critical current and AC losses were measured on American Superconductor Corporation's (AMSC) second generation high temperature superconducting (2G HTS) wire produced by Rolling Assisted Biaxially Textured Substrate (RABiTS) and Metal Organic Deposition (MOD) process. Wires manufactured with two types of substrates were characterized. The magnetic substrate with composition Ni5a%W exhibits a magnetic signature and has non-negligible AC losses in AC power applications. A new nonmagnetic substrate with an alloy composition Ni9a%W has been developed by AMSC to address the AC losses in 2G HTS. The data presented show that the performance of the new conductor is identical to the conductor with magnetic substrate in terms of critical current density. The data on AC losses demonstrate the absence of ferromagnetic loss component in the new conductor and significantly reduced AC losses at low to moderate values of I/Ic. The reduced losses will translate into reduced capital costs and lower operating costs of superconducting electrical devices for AC applications.

  11. The CEA JOSEFA test facility for sub-size conductors and joints

    International Nuclear Information System (INIS)

    Decool, P.; Libeyre, P.; Van Houtte, D.; Ciazynski, D.; Zani, L.; Serries, J.P.; Cloez, H.; Bej, S.

    2003-01-01

    The JOSEFA (Joint Sub-size Experiment FAcility) experimental test facility, installed at CEA/Cadarache is devoted to perform tests at cryogenic temperature on sub-size superconducting conductor and joint samples under parallel or transverse magnetic field. This facility was built in 1993 to investigate the performances of joints of cable-in-conduit conductors at sub-size level and further upgraded in the framework of European tasks. The samples of hairpin type using sub-size ITER conductors are cooled by a circulation of supercritical helium in a temperature range from 5 to 15 K and tested at a maximum current up to 10 kA. Two different helium bath cooled magnets allow to apply DC or AC transverse magnetic field up to 3.5 T or longitudinal magnetic field up to 7.5 T. A sliding system with a 240 mm stroke on the sample cryostat allows to test separately in the same sample either the conductor or the joint performances. The paper reports on how, through the conductor and joint development tasks, the facility performances were successfully increased and tested. The ITER TFMC joints using Nb3Sn conductors were first developed on this facility. The last developments, performed on ITER PF NbTi conductors and joints proved this facility to be a versatile and useful tool for superconducting magnet developments and showed the interest of possible upgrading to finalize conductor design. (author)

  12. Isolated and soft-switched power converter

    Science.gov (United States)

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  13. Power distribution: conductors in aluminium

    International Nuclear Information System (INIS)

    Schmid, R.

    2007-01-01

    This article takes a look at the use of aluminium conductors in medium and low-voltage cables. The author discusses how the increasing price of copper has led to the increasing use of aluminium as a material for the production of the conductors used in medium and low-voltage power cables. Aid is provided that is to help purchasers make the correct decisions when buying medium and low-voltage cables. The current market situation is examined and the appropriate norms are looked at. Technical data and economic aspects are discussed, both for medium and low-voltage applications. The electrical characteristics of the type of cable to be used are examined and discussed

  14. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  15. Temperature measurement device

    International Nuclear Information System (INIS)

    Fournier, Christian; Lions, Noel.

    1975-01-01

    The present invention relates to a temperature measuring system that can be applied in particular to monitoring the temperature of the cooling liquid metal of the outlet of the core assemblies of a fast reactor. Said device combines a long hollow metallic pole, at least partially dipped into the liquid metal and constituting a first thermocouple junction between said pole, and two metallic conductors of different nature, joined at one of their ends to constitute the second thermocouple junction. Said conductors suitably insulated are arranged inside a sheath. Said sheath made of the same metals as the pole extends inside the latter and is connected with the pole through a soldered joint. Said reliable system permits an instantaneous measurement of a quantity representing the variations in the recorded temperature and a measurement of the mean surrounding temperature that can be direcly used as a reference for calibrating the first one [fr

  16. Uncertainty in microscale gas damping: Implications on dynamics of capacitive MEMS switches

    International Nuclear Information System (INIS)

    Alexeenko, Alina; Chigullapalli, Sruti; Zeng Juan; Guo Xiaohui; Kovacs, Andrew; Peroulis, Dimitrios

    2011-01-01

    Effects of uncertainties in gas damping models, geometry and mechanical properties on the dynamics of micro-electro-mechanical systems (MEMS) capacitive switch are studied. A sample of typical capacitive switches has been fabricated and characterized at Purdue University. High-fidelity simulations of gas damping on planar microbeams are developed and verified under relevant conditions. This and other gas damping models are then applied to study the dynamics of a single closing event for switches with experimentally measured properties. It has been demonstrated that although all damping models considered predict similar damping quality factor and agree well for predictions of closing time, the models differ by a factor of two and more in predicting the impact velocity and acceleration at contact. Implications of parameter uncertainties on the key reliability-related parameters such as the pull-in voltage, closing time and impact velocity are discussed. A notable effect of uncertainty is that the nominal switch, i.e. the switch with the average properties, does not actuate at the mean actuation voltage. Additionally, the device-to-device variability leads to significant differences in dynamics. For example, the mean impact velocity for switches actuated under the 90%-actuation voltage (about 150 V), i.e. the voltage required to actuate 90% of the sample, is about 129 cm/s and increases to 173 cm/s for the 99%-actuation voltage (of about 173 V). Response surfaces of impact velocity and closing time to five input variables were constructed using the Smolyak sparse grid algorithm. The sensitivity analysis showed that impact velocity is most sensitive to the damping coefficient whereas the closing time is most affected by the geometric parameters such as gap and beam thickness. - Highlights: → We examine stochastic non-linear response of a microsystem switch subject to multiple input uncertainties. → Sample devices have been fabricated and device-to-device

  17. Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

    Science.gov (United States)

    Jah, Muzar; Simon, Eric; Sharma, Ashok

    2003-01-01

    Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

  18. Practical microwave electron devices

    CERN Document Server

    Meurant, Gerard

    2013-01-01

    Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

  19. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    International Nuclear Information System (INIS)

    Kim, E J; Kim, K A; Yoon, S M

    2016-01-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses. (paper)

  20. The Identification of Conductor-Distinguished Functions of Conducting

    Science.gov (United States)

    Gumm, Alan J.; Battersby, Sharyn L.; Simon, Kathryn L.; Shankles, Andrew E.

    2011-01-01

    The purpose of the present study was to identify whether conductors distinguish functions of conducting similarly to functions implied in previous research. A sample of 84 conductors with a full range of experience levels (M = 9.8) and of a full range of large ensemble types and ensemble age levels rated how much they pay attention to 82…

  1. Switching patients from other inhaled corticosteroid devices to the Easyhaler®: historical, matched-cohort study of real-life asthma patients

    Directory of Open Access Journals (Sweden)

    Price D

    2014-04-01

    Full Text Available David Price,1,2 Vicky Thomas,2 Julie von Ziegenweidt,2 Shuna Gould,2 Catherine Hutton,2 Christine King2 1Academic Centre of Primary Care, University of Aberdeen, Aberdeen, UK; 2Research in Real Life, Oakington, Cambridge, UK Purpose: To investigate the clinical and cost effectiveness of switching real-life asthma patients from other types of inhalers to the Easyhaler® (EH for the administration of inhaled corticosteroids (ICS. Patients and methods: Historical, matched-cohort study of 1,958 asthma patients (children and adults treated in UK primary-care practices, using data obtained from the Optimum Patient Care Research Database and Clinical Practice Research Datalink. Other inhalers (OH included pressurized metered-dose inhalers, breath-actuated inhalers, and dry-powder inhalers, delivering beclomethasone, budesonide, fluticasone, or ciclesonide. Patients remaining on OH unchanged (same drug, dosage, and device; n=979 were matched 1:1 with those switched to the EH (beclomethasone or budesonide at the same or lower ICS dosage (n=979, based on age, sex, year of index patient review/switch, most recent ICS drug, dosage, and device, and the number of severe exacerbations and average daily short-acting β2 agonist (SABA dosage in the preceding year. Clinical outcomes and health care costs were compared between groups for 12 months before and after the switch. Co-primary clinical outcomes were: 1 risk domain asthma control (RDAC – no asthma-related hospitalization, acute oral steroid use, or lower respiratory tract infection (LRTI; 2 exacerbation rate (American Thoracic Society [ATS] definition – where exacerbation is asthma-related hospitalization or acute oral steroid use; 3 exacerbation rate (clinical definition – where exacerbation is ATS exacerbation or LRTI; and 4 overall asthma control (OAC – RDAC plus average salbutamol-equivalent SABA dosage ≤200 μg/day. Non-inferiority (at least equivalence of EH was tested against OH for the

  2. Photo-induced optical activity in phase-change memory materials.

    Science.gov (United States)

    Borisenko, Konstantin B; Shanmugam, Janaki; Williams, Benjamin A O; Ewart, Paul; Gholipour, Behrad; Hewak, Daniel W; Hussain, Rohanah; Jávorfi, Tamás; Siligardi, Giuliano; Kirkland, Angus I

    2015-03-05

    We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

  3. Design and fabrication of forced-flow superconducting poloidal coils for the Large Helical Device

    International Nuclear Information System (INIS)

    Nakamoto, K.; Yamamoto, T.; Mizumaki, S.; Yamakoshi, T.; Kanai, Y.; Yamamoto, K.; Wachi, Y.; Ushijima, M.; Yoshida, T.; Kai, T.; Takahata, K.; Yamamoto, J.; Satow, T.; Motojima, O.

    1995-01-01

    Three pairs of superconducting poloidal coils for the LHD (Large Helical Device) have been designed and fabricated using NbTi/Cu cable-in-conduit (CIC) conductors cooled with forced-flow supercritical helium (SHE). In the LHD poloidal coils, high field accuracy as well as high reliability are required. To meet these requirements, detailed field and structural analyses have been performed and key parameters including winding pattern and size and locations of conductor joints have been determined. Compact conductor joint, where NbTi filaments are directly bonded, has also been developed using the solid state bonding technique. (orig.)

  4. Proton-Controlled Organic Microlaser Switch.

    Science.gov (United States)

    Gao, Zhenhua; Zhang, Wei; Yan, Yongli; Yi, Jun; Dong, Haiyun; Wang, Kang; Yao, Jiannian; Zhao, Yong Sheng

    2018-05-25

    Microscale laser switches have been playing irreplaceable roles in the development of photonic devices with high integration levels. However, it remains a challenge to switch the lasing wavelengths across a wide range due to relatively fixed energy bands in traditional semiconductors. Here, we report a strategy to switch the lasing wavelengths among multiple states based on a proton-controlled intramolecular charge-transfer (ICT) process in organic dye-doped flexible microsphere resonant cavities. The protonic acids can effectively bind onto the ICT molecules, which thus enhance the ICT strength of the dyes and lead to a red-shifted gain behavior. On this basis, the gain region was effectively modulated by using acids with different proton-donating ability, and as a result, laser switching among multiple wavelengths was achieved. The results will provide guidance for the rational design of miniaturized lasers with performances based on the characteristic of organic optoelectronic materials.

  5. Effect of resistance feedback on spin torque-induced switching of nanomagnets

    International Nuclear Information System (INIS)

    Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

    2009-01-01

    In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

  6. Wideband microwave generation with GaAs photoconductive switches

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Stein, J. M.; Obannon, B. J. J.

    1991-07-01

    We are using solid state photoconductive switches to generate wideband microwave pulses with peak powers to 20 MW. A parallel-plate Blumlein transmission line is used to directly feed an exponential taper antenna to produce single pulses with rise times of 200 ps and pulse durations of 340 ps (FWHM). Voltages up to 21 kV have been generated in a 1 cm tall, 12 cm wide parallel-plate line. With the switches operated in linear mode, we have demonstrated phasing of several switches to generate a coherent wave. Generated and radiated signals agree very well with numerical calculations. Radiation efficiencies approach 30 percent. The Blumlein dielectric can be changed to produce a damped waveform, thereby modifying the bandwidth of the signal. We have generated damped waveforms of up to 3 cycles using this method. The parallel-plate geometry lends itself to coupling to an antenna structure to radiate efficiently. The geometry also lends itself to expanding the generator in height and width. We have stacked two generators to nearly double the output power without degrading the pulse characteristics. Applications of ultrashort microwave pulses require a high repetition rate and long life from the generator. Life times of greater than 10(exp 5) shots have been seen occasionally at low to medium power densities. As the power density of a solid state photoconductive switch is increased, device life decreases. We have the capability to test devices at a repetition rate of 30 Hz and voltages to 25 kV. Preliminary data indicates that repeated pulse biasing (without switching) of large LEC grown devices in a slab geometry with fields as low as 30 kV/cm damages the switch and eventually leads to failure.

  7. Wideband microwave generation with GaAs photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (United States)); Stein, J.M. (Rockwell International Corp., Albuquerque, NM (United States)); O' Bannon, B.J.J. (Rockwell International Corp., Anaheim, CA (United States))

    1991-01-01

    We are using solid state photoconductive switches to generate wideband microwave pulses with peak powers to 20 MW. A parallel-plate Blumlein transmission line is used to directly feed an exponential taper antenna to produce single pulses with rise times of 200 ps and pulse durations of 340 ps (FWHM). Voltages up to 21 kV have been generated in a 1 cm tall, 12 cm wide parallel-plate line. With the switches operated in linear mode, we have demonstrated phasing of several switches to generate a coherent wave. Generated and radiated signals agree very well with numerical calculations. Radiation efficiencies approach 30%. The Blumlein dielectric can be changed to produce a damped waveform, thereby modifying the bandwidth of the signal. We have generated damped waveforms of up to 3 cycles using this method. The parallel-plate geometry lends itself to coupling to an antenna structure to radiate efficiently. The geometry also lends itself to expanding the generator in height and width. We have stacked two generators to nearly double the output power without degrading the pulse characteristics. Applications of ultrashort microwave pulses (UWB radar, HPM weapons) require a high repetition rate and long life from the generator. Life times of >10{sup 5} shots have been seen occasionally at low to medium power densities. As the power density of a solid state photoconductive switch is increased, device life decreases. We have the capability to test devices at a repetition rate of 30 Hz and voltages to 25 kV. Preliminary data indicates that repeated pulse biasing (without switching) of large LEC grown devices in a slab geometry with fields as low as 30 kV/cm damages the switch and eventually leads to failure. 6 refs., 10 figs.

  8. Investigation of current redistribution in superstabilized superconducting winding when switching to the normal resistive state

    International Nuclear Information System (INIS)

    Devred, A.

    1989-01-01

    We have investigated the electromagnetic behavior of a layer of superstabilized superconductive composite conductors when switching instantaneously and uniformly to the normal resistive state. The Laplace transform was used to solve the current diffusion equation in the superstabilizing material. The value of power dissipated per unit volume, averaged over the layer thickness, was then computed using the ''pseudo''-convolution theorem in the complex plane. Last, we present a simple interpretation of the phenomenon with the help of two time constants

  9. Test device for measuring permeability of a barrier material

    Science.gov (United States)

    Reese, Matthew; Dameron, Arrelaine; Kempe, Michael

    2014-03-04

    A test device for measuring permeability of a barrier material. An exemplary device comprises a test card having a thin-film conductor-pattern formed thereon and an edge seal which seals the test card to the barrier material. Another exemplary embodiment is an electrical calcium test device comprising: a test card an impermeable spacer, an edge seal which seals the test card to the spacer and an edge seal which seals the spacer to the barrier material.

  10. Copper oxide resistive switching memory for e-textile

    Directory of Open Access Journals (Sweden)

    Jin-Woo Han

    2011-09-01

    Full Text Available A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

  11. High-speed electro-optic switch with -80 dB crosstalk

    Science.gov (United States)

    Pan, J. J.; Su, W. H.; Xu, J. Y.; Grove, C. H.

    1992-01-01

    Special device modeling, design and layout, and precision processing controls were employed to fabricate new balanced-bridge 2x2 and 4x4 switches on X-cut, Y-propagation LiNbO3 substrate using Ti indiffused optical waveguides. The best of these devices achieved extinction ratio and crosstalk isolation of better than 93 dB electrically (46.5 dB optically). The new switches demonstrate good reproducibility with electrical crosstalk less than -80 dB.

  12. Switch on the Learning: Teaching Students with Significant Disabilities to Use Switches

    Science.gov (United States)

    Schaefer, John M.; Andzik, Natalie R.

    2016-01-01

    Students with significant disabilities often struggle to communicate their wants and needs but can be taught widely recognizable communication with the aid of augmentative and alternative communication (AAC) supports. Simple speech generating devices (SGDs) such as Step-by-Step switches or GoTalk can be used by students to send specific messages.…

  13. 21 CFR 868.1920 - Esophageal stethoscope with electrical conductors.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Esophageal stethoscope with electrical conductors. 868.1920 Section 868.1920 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN... stethoscope with electrical conductors. (a) Identification. An esophageal stethoscope with electrical...

  14. Twenty years of cable-in-conduit conductors: 1975-1995

    International Nuclear Information System (INIS)

    Dresner, L.

    1995-01-01

    This paper reviews our progress during the last two decades in understanding cable-in-conduit conductors. The emphasis is on the physical principles governing the behavior of cable-in-conduit conductors, and no detailed mathematics is presented. The paper is constructed as a historical narrative

  15. Design of force-cooled conductors for large fusion magnets

    Energy Technology Data Exchange (ETDEWEB)

    Dresner, L.; Lue, J.W.

    1977-01-01

    Conductors cooled by supercritical helium in forced convection are under active consideration for large toroidal fusion magnets. One of the central problems in designing such force cooled conductors is to maintain an adequate stability margin while keeping the pumping power tolerably low. A method has been developed for minimizing the pumping power for fixed stability by optimally choosing the matrix-to-superconductor and the metal-to-helium ratios. Such optimized conductors reduce pumping power requirements for fusion size magnets to acceptable limits. Furthermore, the mass flow and hence pumping losses can be varied through a magnet according to the local magnetic field and magnitude of desired stability margin. Force cooled conductors give flexibility in operation, permitting, for example, higher fields to be obtained than originally intended by lowering the bath temperature or increasing the pumping power or both. This flexibility is only available if the pumping power is low to begin with. Scaling laws for the pumping requirement and stability margin as functions of operating current density, number of strands and such physical parameters as stabilizer resistivity and critical current density, have been proved. Numerical examples will be given for design of conductors intended for use in large toroidal fusion magnet systems.

  16. Design of force-cooled conductors for large fusion magnets

    International Nuclear Information System (INIS)

    Dresner, L.; Lue, J.W.

    1977-01-01

    Conductors cooled by supercritical helium in forced convection are under active consideration for large toroidal fusion magnets. One of the central problems in designing such force cooled conductors is to maintain an adequate stability margin while keeping the pumping power tolerably low. A method has been developed for minimizing the pumping power for fixed stability by optimally choosing the matrix-to-superconductor and the metal-to-helium ratios. Such optimized conductors reduce pumping power requirements for fusion size magnets to acceptable limits. Furthermore, the mass flow and hence pumping losses can be varied through a magnet according to the local magnetic field and magnitude of desired stability margin. Force cooled conductors give flexibility in operation, permitting, for example, higher fields to be obtained than originally intended by lowering the bath temperature or increasing the pumping power or both. This flexibility is only available if the pumping power is low to begin with. Scaling laws for the pumping requirement and stability margin as functions of operating current density, number of strands and such physical parameters as stabilizer resistivity and critical current density, have been proved. Numerical examples will be given for design of conductors intended for use in large toroidal fusion magnet systems

  17. A Novel Method for Detection and Classification of Covered Conductor Faults

    Directory of Open Access Journals (Sweden)

    Stanislav Misak

    2016-01-01

    Full Text Available Medium-Voltage (MV overhead lines with Covered Conductors (CCs are increasingly being used around the world primarily in forested or dissected terrain areas or in urban areas where it is not possible to utilize MV cable lines. The CC is specific in high operational reliability provided by the conductor core insulation compared to Aluminium-Conductor Steel-Reinforced (ACSR overhead lines. The only disadvantage of the CC is rather the problematic detection of faults compared to the ACSR. In this work, we consider the following faults: the contact of a tree branch with a CC and the fall of a conductor on the ground. The standard protection relays are unable to detect the faults and so the faults pose a risk for individuals in the vicinity of the conductor as well as it compromises the overall safety and reliability of the MV distribution system. In this article, we continue with our previous work aimed at the method enabling detection of the faults and we introduce a method enabling a classification of the fault type. Such a classification is especially important for an operator of an MV distribution system to plan the optimal maintenance or repair the faulty conductors since the fall of a tree branch can be solved later whereas the breakdown of a conductor means an immediate action of the operator.

  18. Pulse Propagation on close conductors

    CERN Document Server

    Dieckmann, A

    2001-01-01

    The propagation and reflection of arbitrarily shaped pulses on non-dispersive parallel conductors of finite length with user defined cross section is simulated employing the discretized telegraph equation. The geometry of the system of conductors and the presence of dielectric material determine the capacities and inductances that enter the calculation. The values of these parameters are found using an iterative Laplace equation solving procedure and confirmed for certain calculable geometries including the line charge inside a box. The evolving pulses and the resulting crosstalk can be plotted at any instant and - in the Mathematica notebook version of this report - be looked at in an animation. As an example a differential pair of microstrips as used in the ATLAS vertex detector is analysed.

  19. Fabrication and tests of EF conductors for JT-60SA

    Energy Technology Data Exchange (ETDEWEB)

    Kizu, Kaname, E-mail: kizu.kaname@jaea.go.jp [Japan Atomic Energy Agency, Naka, Ibaraki 311-0193 (Japan); Kashiwa, Yoshitoshi; Murakami, Haruyuki [Japan Atomic Energy Agency, Naka, Ibaraki 311-0193 (Japan); Obana, Tetsuhiro; Takahata, Kazuya [National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan); Tsuchiya, Katsuhiko; Yoshida, Kiyoshi [Japan Atomic Energy Agency, Naka, Ibaraki 311-0193 (Japan); Hamaguchi, Shinji [National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan); Matsui, Kunihiro [Japan Atomic Energy Agency, Naka, Ibaraki 311-0193 (Japan); Nakamura, Kazuya; Takao, Tomoaki [Sophia University, Tokyo 102-8554 (Japan); Yanagi, Nagato; Imagawa, Shinsaku; Mito, Toshiyuki [National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan)

    2011-10-15

    The conductors for plasma equilibrium field (EF) coils of JT-60SA are NbTi cable-in-conduit (CIC) conductor with stainless steel 316L jacket. The production of superconductors for actual EF coils started from February 2010. Nine superconductors with 444 m in length were produced up to July 2010. More than 300 welding of jackets were performed. Six nonconformities were found by inspections as go gauge, visual inspection and X-ray test. In order to shorten the manufacturing time schedule, helium leak test was conducted at once after connecting the long length jacket not just after the welding. The maximum force to pull the cable into jacket was about 7.6 kN on average. The mass flow rates of 9 conductors showed almost same values indicating that there are no blockages in the conductors. The measured current sharing temperature agreed with the expectation values from strand performance indicating that no degradation was caused by production process. The coupling time constants of conductors ranged from 80 to 90 ms which are much smaller than the design value of 200 ms.

  20. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed optical device is a fiber-based multi-channel switch to quickly switch a fiber-coupled laser among many possible output channels to create a fiber-based...

  1. A family of oxide ion conductors based on the ferroelectric perovskite Na0.5Bi0.5TiO3.

    Science.gov (United States)

    Li, Ming; Pietrowski, Martha J; De Souza, Roger A; Zhang, Huairuo; Reaney, Ian M; Cook, Stuart N; Kilner, John A; Sinclair, Derek C

    2014-01-01

    Oxide ion conductors find important technical applications in electrochemical devices such as solid-oxide fuel cells (SOFCs), oxygen separation membranes and sensors. Na0.5Bi0.5TiO3 (NBT) is a well-known lead-free piezoelectric material; however, it is often reported to possess high leakage conductivity that is problematic for its piezo- and ferroelectric applications. Here we report this high leakage to be oxide ion conduction due to Bi-deficiency and oxygen vacancies induced during materials processing. Mg-doping on the Ti-site increases the ionic conductivity to ~0.01 S cm(-1) at 600 °C, improves the electrolyte stability in reducing atmospheres and lowers the sintering temperature. This study not only demonstrates how to adjust the nominal NBT composition for dielectric-based applications, but also, more importantly, gives NBT-based materials an unexpected role as a completely new family of oxide ion conductors with potential applications in intermediate-temperature SOFCs and opens up a new direction to design oxide ion conductors in perovskite oxides.

  2. Heat resistant/radiation resistant cable and incore structure test device for FBR type reactor

    International Nuclear Information System (INIS)

    Tanimoto, Hajime; Shiono, Takeo; Sato, Yoshimi; Ito, Kazumi; Sudo, Shigeaki; Saito, Shin-ichi; Mitsui, Hisayasu.

    1995-01-01

    A heat resistant/radiation resistant coaxial cable of the present invention comprises an insulation layer, an outer conductor and a protection cover in this order on an inner conductor, in which the insulation layer comprises thermoplastic polyimide. In the same manner, a heat resistant/radiation resistant power cable has an insulation layer comprising thermoplastic polyimide on a conductor, and is provided with a protection cover comprising braid of alamide fibers at the outer circumference of the insulation layer. An incore structure test device for an FBR type reactor comprises the heat resistant/radiation resistant coaxial cable and/or the power cable. The thermoplastic polyimide can be extrusion molded, and has excellent radiation resistant by the extrusion, as well as has high dielectric withstand voltage, good flexibility and electric characteristics at high temperature. The incore structure test device for the FBR type reactor of the present invention comprising such a cable has excellent reliability and durability. (T.M.)

  3. Fabrication process of a superconducting multifilament conductor of a cable and resulting electric conductor. Procede de fabrication d'un conducteur a brins multifilamentaires supraconducteurs, et conducteur en resultant

    Energy Technology Data Exchange (ETDEWEB)

    Fevrier, A; Verhaege, T; Bonnet, P

    1990-10-05

    Elementary conductors constituted of a plurality of superconducting filaments in a metallic matrix are prepared and then twisted. Elementary conductors with a diameter between 0.05 and 0.25 mm without electric insulation are twisted after heating with a pitch of four time the diameter, finally the conductor is insulated.

  4. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  5. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin

    2014-11-12

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

  6. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  7. Electroforming free resistive switching memory in two-dimensional VOx nanosheets

    KAUST Repository

    Hota, Mrinal Kanti

    2015-10-21

    We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.

  8. CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

    Science.gov (United States)

    Davidson, Bradley Darren

    This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

  9. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  10. Beyond the Beat: Modelling Intentions in a Virtual Conductor

    NARCIS (Netherlands)

    ter Maat, Mark; Ebbers, Rob M.; Reidsma, Dennis; Nijholt, Antinus

    We describe our research on designing and implementing a Virtual Conductor. That is, a virtual human (embodied agent) that acts like a human conductor in its interaction with a real, human orchestra. We reported previously on a first version that used a digital musical score to lead an orchestra.

  11. Field-Programmable Logic Devices with Optical Input Output

    Science.gov (United States)

    Szymanski, Ted H.; Saint-Laurent, Martin; Tyan, Victor; Au, Albert; Supmonchai, Boonchuay

    2000-02-01

    A field-programmable logic device (FPLD) with optical I O is described. FPLD s with optical I O can have their functionality specified in the field by means of downloading a control-bit stream and can be used in a wide range of applications, such as optical signal processing, optical image processing, and optical interconnects. Our device implements six state-of-the-art dynamically programmable logic arrays (PLA s) on a 2 mm 2 mm die. The devices were fabricated through the Lucent Technologies Advanced Research Projects Agency Consortium for Optical and Optoelectronic Technologies in Computing (Lucent ARPA COOP) workshop by use of 0.5- m complementary metal-oxide semiconductor self-electro-optic device technology and were delivered in 1998. All devices are fully functional: The electronic data paths have been verified at 200 MHz, and optical tests are pending. The device has been programmed to implement a two-stage optical switching network with six 4 4 crossbar switches, which can realize more than 190 10 6 unique programmable input output permutations. The same device scaled to a 2 cm 2 cm substrate could support as many as 4000 optical I O and 1 Tbit s of optical I O bandwidth and offer fully programmable digital functionality with approximately 110,000 programmable logic gates. The proposed optoelectronic FPLD is also ideally suited to realizing dense, statically reconfigurable crossbar switches. We describe an attractive application area for such devices: a rearrangeable three-stage optical switch for a wide-area-network backbone, switching 1000 traffic streams at the OC-48 data rate and supporting several terabits of traffic.

  12. Physics of superionic conductors

    CERN Document Server

    1979-01-01

    Superionic conductors are solids whose ionic conductivities approach, and in some cases exceed, those of molten salts and electrolyte solutions. This implies an un­ usual state of matter in which some atoms have nearly liquidlike mobility while others retain their regular crystalline arrangement. This liquid-solid duality has much appeal to condensed matter physicists, and the coincident development of powerful new methods for studying disordered solids and interest in superionic conductors for technical applications has resulted in a new surge of activity in this venerable field. It is the purpose of this book to summarize the current re­ search in the physics of superionic conduction. with special emphasis on those aspects which set these materials apart from other solids. The volume is aimed to­ wards the materials community and will, we expect, stimulate further research on these potentially useful substances. The usual characterization of the superionic phase lists high ionic conductivity; low activat...

  13. Single layered flexible photo-detector based on perylene/graphene composite through printed technology

    Science.gov (United States)

    Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

    2015-07-01

    In this paper, a single layered passive photo sensor based on perylene/graphene composite is proposed, which is deposited in comb type silver electrodes separated as 50 μm spacing. To increase an electrical conductivity of the proposed sensor, perylene and graphene are blended. Photo sensing layer (120nm thick) and Silver electrodes (50 μm width, 350 nm thick) are deposited on poly(ethylene terephthalate) (PET) substrate through electro-hydrodynamic (EHD) system. The proposed photo sensor detects a terminal resistance inversely varied by an incident light in the range between 78 GΩ in dark and 25 GΩ at light intensity of 400lux. The device response is maximum at 465 nm ~ 535 nm wavelength range at blue light. The device exhibited bendability up to 4mm diameter for 1000 endurance cycles. The surface morphology analysis is carried out with FE-SEM and microscope.

  14. Investigation of the influence of heat transfer on screen printed textile conductor

    Science.gov (United States)

    Kazani, I.; De Mey, G.; Hertleer, C.; Guxho, G.; Van Langenhove, L.

    2017-10-01

    Two different textile substrates were screen printed with silver-based inks in order to be electrically conductive. In every textile four conductors were printed with different widths in order to investigate the influence of heat transfer on each conductor. This was done, by using the thermo graphic camera and through the evaluation of each conductor’s profile. It was found that the conductors printed on the white textile had higher values of heat transfer compared to the other conductors printed on the dark textiles.

  15. Assessment of the noise annoyance among subway train conductors in Tehran, Iran.

    Science.gov (United States)

    Hamidi, Mansoureh; Kavousi, Amir; Zaheri, Somayeh; Hamadani, Abolfazl; Mirkazemi, Roksana

    2014-01-01

    Subway transportation system is a new phenomenon in Iran. Noise annoyance interferes with the individual's task performance, and the required alertness in the driving of subway trains. This is the first study conducted to measure the level of noise and noise annoyance among conductors of subway organization in Tehran, Iran. This cross sectional study was conducted among 167 randomly selected train conductors. Information related to noise annoyance was collected by using a self-administered questionnaire. The dosimetry and sound metering was done for the conductors and inside the cabins. There were 41 sound metering measuring samples inside the conductors' cabin, and there were 12 samples of conductors' noise exposure. The results of sound level meter showed that the mean Leq was 73.0 dBA ± 8.7 dBA and the dosimetry mean measured Leq was 82.1 dBA ± 6.8 dBA. 80% of conductors were very annoyed/annoyed by noise in their work place. 53.9% of conductors reported that noise affected their work performance and 63.5% reported that noise causes that they lose their concentration. The noise related to movement of train wheels on rail was reported as the worst by 83.2% followed by the noise of brakes (74.3%) and the ventilation noise (71.9%). 56.9% of conductors reported that they are suffering from sleeplessness, 40.1% from tinnitus and 80.2% feeling fatigue and sleepy. The study results showed the high level of noise and noise annoyance among train conductors and the poor health outcome of their exposure to this level of noise.

  16. Quantum oscillations in quasi-two-dimensional conductors

    CERN Document Server

    Galbova, O

    2002-01-01

    The electronic absorption of sound waves in quasi-two-dimensional conductors in strong magnetic fields, is investigated theoretically. A longitudinal acoustic wave, propagating along the normal n-> to the layer of quasi-two-dimensional conductor (k-> = left brace 0,0,k right brace; u-> = left brace 0,0,u right brace) in magnetic field (B-> = left brace 0, 0, B right brace), is considered. The quasiclassical approach for this geometry is of no interest, due to the absence of interaction between electromagnetic and acoustic waves. The problem is of interest in strong magnetic field when quantization of the charge carriers energy levels takes place. The quantum oscillations in the sound absorption coefficient, as a function of the magnetic field, are theoretically observed. The experimental study of the quantum oscillations in quasi-two-dimensional conductors makes it possible to solve the inverse problem of determining from experimental data the extrema closed sections of the Fermi surface by a plane p sub z = ...

  17. Cryogenic switched MOSFET characterization

    Science.gov (United States)

    1981-01-01

    Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

  18. Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis

    International Nuclear Information System (INIS)

    Khurana, Geetika; Kumar, Nitu; Katiyar, Ram S; Misra, Pankaj; Kooriyattil, Sudheendran; Scott, James F

    2016-01-01

    Forming-free resistive random access memory (ReRAM) devices having low switching voltages are a prerequisite for their commercial applications. In this study, the forming-free resistive switching characteristics of graphene oxide (GO) films embedded with gold nanoparticles (Au Nps), having an enhanced on/off ratio at very low switching voltages, were investigated for non-volatile memories. The GOAu films were deposited by the electrophoresis method and as-grown films were found to be in the low resistance state; therefore no forming voltage was required to activate the devices for switching. The devices having an enlarged on/off ratio window of ∼10"6 between two resistance states at low voltages (<1 V) for repetitive dc voltage sweeps showed excellent properties of endurance and retention. In these films Au Nps were uniformly dispersed over a large area that provided charge traps, which resulted in improved switching characteristics. Capacitance was also found to increase by a factor of ∼10, when comparing high and low resistance states in GOAu and pristine GO devices. Charge trapping and de-trapping by Au Nps was the mechanism responsible for the improved switching characteristics in the films. (paper)

  19. Device and Method for Gathering Ensemble Data Sets

    Science.gov (United States)

    Racette, Paul E. (Inventor)

    2014-01-01

    An ensemble detector uses calibrated noise references to produce ensemble sets of data from which properties of non-stationary processes may be extracted. The ensemble detector comprising: a receiver; a switching device coupled to the receiver, the switching device configured to selectively connect each of a plurality of reference noise signals to the receiver; and a gain modulation circuit coupled to the receiver and configured to vary a gain of the receiver based on a forcing signal; whereby the switching device selectively connects each of the plurality of reference noise signals to the receiver to produce an output signal derived from the plurality of reference noise signals and the forcing signal.

  20. Energy losses in switches

    International Nuclear Information System (INIS)

    Martin, T.H.; Seamen, J.F.; Jobe, D.O.

    1993-01-01

    The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset