A microcontroller based readout unit for a smart personnel monitoring TLD badge

International Nuclear Information System (INIS)

Gaonkar, U.P.; Kulkarni, M.S.; Kannan, S.

1997-01-01

An automated TLD personnel monitoring system is under development to cope up with the requirements of personnel monitoring of rapidly growing number of radiation workers. The core of the system is a smart TLD badge incorporating a memory device and a microcontroller based readout unit for reading the memory contents of the badge. The memory is used to store personnel data including the accumulated dose data. The reader unit has a serial RS 232C interface for connection to a PC for entering/modifying data in the memory. A password protected software has also been developed in C for entering/modifying the data in the single memory. 3 figs

Occupational exposure from external radiation used in medical practices in Pakistan by film badge dosimetry

International Nuclear Information System (INIS)

Jabeen, A.; Munir, M.; Khalil, A.; Masood, M.; Akhter, P.

2010-01-01

Occupational exposure data of workers due to external sources of radiation in various medical practices such as nuclear medicine (NM), radiotherapy and diagnostic radiology (DR) in Pakistan were collected and analysed. Whole-body doses of workers were measured by film badge dosimetry technique during 2003-2007. Annual average effective dose in NM, radio-therapy and DR varied in the range of 1.39-1.80, 1.05-1.45 and 1.22-1.71 mSv, respectively, during 2003-2007. These values are quite low and well below the annual limit of 20 mSv averaged over a period of 5 consecutive years. Nobody received the radiation dose >50 mSv in any single year over a period of 5 consecutive years; therefore, no overexposure case has been detected. Decreasing trend of annual average dose values in aforementioned categories of work during 2003-2007 indicates the improvement of radiation protection status in medical field in Pakistan. (authors)

SSDL Preparation for Implementation of the Use of OSL Dosimeters in Malaysia

International Nuclear Information System (INIS)

Sangau, J.K.; Taiman Kadni; Ahmad Bazlie Abdul Kadir

2013-01-01

Since the early 1980's, film badge has been widely used as a device of personal dose monitoring in Malaysia. Secondary Standard Dosimetry Laboratory (SSDL), as a service center for film badge has obtained the supply of personal monitoring film from Agfa Gevaert, Belgium every year. As the uses of film badge have some weaknesses, it has prompted SSDL to find an alternative dosimeter to replace the film badge. Based on the studies that have been conducted, SSDL has selected OSL dosimeter (Optically Stimulated Luminescent Dosimeter) to replace the film badge and is expected to be fully operational by middle of 2015. This paper aims to explain the selection of OSL dosimeter and planning carried out to ensure the success of their application in Malaysia. (author)

Tweeting badges: user motivations for displaying achievement in publicly networked environments.

Science.gov (United States)

Kwon, K Hazel; Halavais, Alexander; Havener, Shannon

2015-02-01

Badge systems, a common mechanism for gamification on social media platforms, provide a way for users to present their knowledge or experience to others. This study aims to contribute to the understanding of why social media users publicize their achievements in the form of online badges. Five motivational factors for badge display in public networked environments are distinguished-self-efficacy, social incentives, networked support, passing time, and inattentive sharing-and it is suggested that different badge types are associated with different motivations. System developers are advised to consider these components in their designs, applying the elements most appropriate to the communities they serve. Comparing user motivations associated with badges shared across boundaries provides a better understanding of how online badges relate to the larger social media ecosystem.

Using digital badges in South Africa informing the validation of a multi-channel open badge system at a German university

CSIR Research Space (South Africa)

Niehaus, E

2017-05-01

Full Text Available strategy, remains an area to explore. One of the most crucial points of concern currently with digital badging is how to validate or credit a competence or skillset and what value this validation will carry for the individual. The Mozilla digital badge...

Badge Office Process Analysis

Energy Technology Data Exchange (ETDEWEB)

Haurykiewicz, John Paul [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dinehart, Timothy Grant [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Parker, Robert Young [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-05-12

The purpose of this process analysis was to analyze the Badge Offices’ current processes from a systems perspective and consider ways of pursuing objectives set forth by SEC-PS, namely increased customer flow (throughput) and reduced customer wait times. Information for the analysis was gathered for the project primarily through Badge Office Subject Matter Experts (SMEs), and in-person observation of prevailing processes. Using the information gathered, a process simulation model was constructed to represent current operations and allow assessment of potential process changes relative to factors mentioned previously. The overall purpose of the analysis was to provide SEC-PS management with information and recommendations to serve as a basis for additional focused study and areas for potential process improvements in the future.

X-ray spot film device

International Nuclear Information System (INIS)

1981-01-01

Improvements are described in an X-ray spot film device which is used in conjunction with an X-ray table to make a selected number of radiographic exposures on a single film and to perform fluoroscopic examinations. To date, the spot film devices consist of two X-ray field defining masks, one of which is moved manually. The present device is more convenient to use and speeds up the procedure. (U.K.)

Adding Badging to a Marketing Simulation to Increase Motivation to Learn

Science.gov (United States)

Saxton, M. Kim

2015-01-01

Badging has become a popular tool for obtaining social recognition for personal accomplishments. This innovation describes a way to add badging to a marketing simulation to increase student motivation to achieve the simulation's goals. Assessments indicate that badging both motivates students to perform better and helps explain students' perceived…

Carrying an anti-nuclear-power badge in the teaching profession

International Nuclear Information System (INIS)

Anon.

1990-01-01

The carrying of an anti-nuclear-power badge by a teacher during school hours violates the order to practice reticence in political activities. At the beginning of 1977 some teachers, the plaintiff as well, carried anti-nuclear-power badges, i.e. a round badge with a stylized red sun on a yellow background with the inscription 'Nuclear power - No, thank you'. Following a general direction by the educational authorities, the headmistress forbade plaintiff on 4.11.77 to visibly carry this badge during lessons. This protest having been without success, action was brought with partial success at the Administrative and Higher Administrative Court. The Federal Administrative Court dismissed the case. (orig./HSCH) [de

Radiographic film digitizing devices

International Nuclear Information System (INIS)

McFee, W.H.

1988-01-01

Until recently, all film digitizing devices for use with teleradiology or picture archiving and communication systems used a video camera to capture an image of the radiograph for subsequent digitization. The development of film digitizers that use a laser beam to scan the film represents a significant advancement in digital technology, resulting in improved image quality compared with video scanners. This paper discusses differences in resolution, efficiency, reliability, and the cost between these two types of devices. The results of a modified receiver operating characteristic comparison study of a video scanner and a laser scanner manufactured by the same company are also discussed

Student perceptions of digital badges in a drug information and literature evaluation course.

Science.gov (United States)

Fajiculay, Jay R; Parikh, Bhavini T; Wright, Casey V; Sheehan, Amy Heck

2017-09-01

The purpose of this article is to describe student perceptions of implementation of digital badges in a drug information and literature evaluation course. Two digital badges were developed as voluntary learning opportunities. Student perceptions were obtained through pre- and post-survey instruments consisting of selected questions from the Motivated Strategies for Learning Questionnaire. The response rate was 69% (106/153). At baseline, 53% of respondents agreed that digital badges could help them better understand course material. More students agreed they would share earned digital badges on LinkedIn (68%) than Facebook (19%). Most students who earned digital badges agreed that badges helped increase their confidence in course material (73%), focus on specific learning objectives (55%), look deeper into course competencies (64%), and were a useful adjunct to the traditional teaching method (82%). Digital badges were perceived by students as a positive adjunct to learning and may provide a novel mechanism for development of an electronic skills-based portfolio. Copyright © 2017 Elsevier Inc. All rights reserved.

Glass badge dosimetry system for large scale personal monitoring

International Nuclear Information System (INIS)

Norimichi Juto

2002-01-01

Glass Badge using silver activated phosphate glass dosemeter was specially developed for large scale personal monitoring. And dosimetry systems such as an automatic leader and a dose equipment calculation algorithm were developed at once to achieve reasonable personal monitoring. In large scale personal monitoring, both of precision for dosimetry and confidence for lot of personal data handling become very important. The silver activated phosphate glass dosemeter has basically excellent characteristics for dosimetry such as homogeneous and stable sensitivity, negligible fading and so on. Glass Badge was designed to measure 10 keV - 10 MeV range of photon. 300 keV - 3 MeV range of beta, and 0.025 eV - 15 MeV range of neutron by included SSNTD. And developed Glass Badge dosimetry system has not only these basic characteristics but also lot of features to keep good precision for dosimetry and data handling. In this presentation, features of Glass Badge dosimetry systems and examples for practical personal monitoring systems will be presented. (Author)

Digital Badges and Library Instructional Programs: Academic Library Case Study

Science.gov (United States)

Rodgers, Andrea Reed; Puterbaugh, Mark

2017-01-01

This case study describes the planning, implementation, and migration process of Eastern University Library's information literacy digital badge. Prior to implementing a badging program, information literacy sessions were informally embedded in first-year college writing courses as a "one-shot" presentation. Spurred on by accreditation…

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Developing a conceptual model for facilitating the issuing of digital badges in a resource constrained environment

CSIR Research Space (South Africa)

Salerno, S

2015-09-01

Full Text Available Gamification and digital badging are new concepts to the educational environment, where on completion of specific tasks, an individual can earn a badge or badges showing their achievement. Currently Mozilla Open Badges is the standard...

Comparing different error-conditions in film dosemeter evaluation

International Nuclear Information System (INIS)

Roed, H.; Figel, M.

2007-01-01

In the evaluation of a film used as a personal dosemeter it may be necessary to mark the dosemeters when possible error-conditions are recognised, such as errors that have an influence on the ability to make a correct evaluation of the dose value. In this project a comparison has been carried out to examine how two individual monitoring services, IMS [National Inst. of Radiation Hygiene (Denmark) (NIRH) and National Research Centre for Environment and Health (Germany) (GSF)], from two different EU countries mark their dosemeters. The IMS are different in size, type of customers and issuing period, but both use films as their primary dosemeters. The error-conditions examined are dosemeters exposed to moisture or light, contaminated dosemeters, films exposed outside the badge, missing filters in the badge, films inserted incorrectly in the badge and dosemeters not returned or returned too late to the IMS. The data are collected for the year 2003 where NIRH evaluated ∼50,000 and GSF ∼1.4 million film dosemeters. The percentage of film dosemeters is calculated for each error-condition as well as the distribution among eight different employee categories, i.e. medicine, nuclear medicine, nuclear industry, industry, radiography, laboratories, veterinary and others. It turned out, that incorrect insertion of the film in the badge was the most common error-condition observed at both IMS and that veterinarians, as the employee category, generally have the highest number of errors. NIRH has a significantly higher relative number of dosemeters in most error-conditions than GSF, which perhaps reflects that a comparison is difficult due to different systemic and methodical differences between the IMS and countries, e.g. regulations and monitoring programs etc. Also the non-existence of a common categorisation method for employee categories contributes to make a comparison like this difficult. (authors)

Digital Badges for STEM Learning in Secondary Contexts: A Mixed Methods Study

Science.gov (United States)

Elkordy, Angela

The deficit in STEM skills is a matter of concern for national economies and a major focus for educational policy makers. The development of Information and Communications Technologies (ICT) has resulted in a rapidly changing workforce of global scale. In addition, ICT have fostered the growth of digital and mobile technologies which have been the learning context, formal and informal, for a generation of youth. The purpose of this study was to design an intervention based upon a competency-based, digitally-mediated, learning intervention: digital badges for learning STEM habits of mind and practices. Designed purposefully, digital badge learning trajectories and criteria can be flexible tools for scaffolding, measuring, and communicating the acquisition of knowledge, skills, or competencies. One of the most often discussed attributes of digital badges, is the ability of badges to motivate learners. However, the research base to support this claim is in its infancy; there is little empirical evidence. A skills-based digital badge intervention was designed to demonstrate mastery learning in key, age-appropriate, STEM competencies aligned with Next Generation Science Standards (NGSS) and other educational standards. A mixed methods approach was used to study the impact of a digital badge intervention in the sample middle and high school population. Among the findings were statistically significant measures which substantiate that in this student population, the digital badges increased perceived competence and motivated learners to persist at task.

Flexible magnetic thin films and devices

Science.gov (United States)

Sheng, Ping; Wang, Baomin; Li, Runwei

2018-01-01

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

Employer Perceptions of Critical Information Literacy Skills and Digital Badges

Science.gov (United States)

Raish, Victoria; Rimland, Emily

2016-01-01

Digital badges are an educational innovation used to measure learning of specific skills, such as information literacy. However, few studies have quantitatively surveyed employers for their perceptions about information literacy skills or digital badges. An online survey was developed and sent to employers to gauge perceptions of information…

Badges to Acknowledge Open Practices: A Simple, Low-Cost, Effective Method for Increasing Transparency.

Directory of Open Access Journals (Sweden)

Mallory C Kidwell

2016-05-01

Full Text Available Beginning January 2014, Psychological Science gave authors the opportunity to signal open data and materials if they qualified for badges that accompanied published articles. Before badges, less than 3% of Psychological Science articles reported open data. After badges, 23% reported open data, with an accelerating trend; 39% reported open data in the first half of 2015, an increase of more than an order of magnitude from baseline. There was no change over time in the low rates of data sharing among comparison journals. Moreover, reporting openness does not guarantee openness. When badges were earned, reportedly available data were more likely to be actually available, correct, usable, and complete than when badges were not earned. Open materials also increased to a weaker degree, and there was more variability among comparison journals. Badges are simple, effective signals to promote open practices and improve preservation of data and materials by using independent repositories.

A new TLD badge with machine readable ID for fully automated readout

International Nuclear Information System (INIS)

Kannan, S. Ratna P.; Kulkarni, M.S.

2003-01-01

The TLD badge currently being used for personnel monitoring of more than 40,000 radiation workers has a few drawbacks such as lack of on-badge machine readable ID code, delicate two-point clamping of dosimeters on an aluminium card with the chances of dosimeters falling off during handling or readout, projections on one side making automation of readout difficult etc. A new badge has been designed with a 8-digit identification code in the form of an array of holes and smooth exteriors to enable full automation of readout. The new badge also permits changing of dosimeters when necessary. The new design does not affect the readout time or the dosimetric characteristics. The salient features and the dosimetric characteristics are discussed. (author)

The use of film badges for personnel monitoring

International Nuclear Information System (INIS)

Ehrlich, M.

1962-01-01

Photographic film is fairly inexpensive and durable and as a result of irradiation its radiosensitive components undergo relatively permanent changes. With proper calibration the optical density of the development and fixed photographic film can be related to radiation exposure. Personnel monitoring with photographic film is the method of choice in many laboratories, and this manual gives guidelines for the use of photographic film in personnel dosimetry.

Analysis of reaction products of food contaminants and ingredients: bisphenol A diglycidyl ether (BADGE) in canned foods.

Science.gov (United States)

Coulier, Leon; Bradley, Emma L; Bas, Richard C; Verhoeckx, Kitty C M; Driffield, Malcolm; Harmer, Nick; Castle, Laurence

2010-04-28

Bisphenol A diglycidyl ether (BADGE) is an epoxide that is used as a starting substance in the manufacture of can coatings for food-contact applications. Following migration from the can coating into food, BADGE levels decay and new reaction products are formed by reaction with food ingredients. The significant decay of BADGE was demonstrated by liquid chromatographic (LC) analysis of foodstuffs, that is, tuna, apple puree, and beer, spiked with BADGE before processing and storage. Life-science inspired analytical approaches were successfully applied to study the reactions of BADGE with food ingredients, for example, amino acids and sugars. An improved mass balance of BADGE was achieved by selective detection of reaction products of BADGE with low molecular weight food components, using a successful combination of stable isotopes of BADGE and analysis by LC coupled to fluorescence detection (FLD) and high-resolution mass spectrometric (MS) detection. Furthermore, proteomics approaches showed that BADGE also reacts with peptides (from protein digests in model systems) and with proteins in foods. The predominant reaction center for amino acids, peptides, and proteins was cysteine.

Superciliums in white-eared hummingbirds as badges of status signaling dominance.

Science.gov (United States)

González-García, Juan Manuel; Lara, Carlos; Quesada, Javier; Chávez-Zichinelli, Carlos A; Serrano-Meneses, Martín A

2018-04-03

The role of badges as indicators of contest ability has been previously described. In hummingbirds, the exhibition of a badge is expected to save energy expenditure in agonistic interactions and to favor energy intake. Here, we investigate whether variable supercilium size in the white-eared hummingbird has a role in dominance status signaling. Firstly, 45 hummingbird males were captured and their superciliums were photographed to investigate variation in size and any possible allometric relationships. Secondly, 42 male birds were used to analyze whether the supercilium has a role in dominance status signaling in a dyadic contest. We found that supercilium size varied continuously but that despite variability between individuals, there was no relationship between supercilium size and body size. However, our dyad experiment indicated that birds with larger badges were able to make more visits to the feeders than individuals with smaller badges. We suggest a status signaling function of the supercilium.

Teachers' Perceptions of Digital Badges as Recognition of Professional Development

Science.gov (United States)

Jones, W. Monty; Hope, Samantha; Adams, Brianne

2018-01-01

This mixed methods study examined teachers' perceptions and uses of digital badges received as recognition of participation in a professional development program. Quantitative and qualitative survey data was collected from 99 K-12 teachers who were awarded digital badges in Spring 2016. In addition, qualitative data was collected through…

The Effect of Achievement Badges on Students’ Behavior: An Empirical Study in a University-Level Computer Science Course

Directory of Open Access Journals (Sweden)

Lasse Hakulinen

2015-02-01

Full Text Available Achievement badges are a form of gamification that are used in an attempt to increase user engagement and motivation in various systems. A badge is typically a graphical icon that appears as a reward for the user after reaching an achievement but that has no practical value. In this study, we describe and evaluate the use of achievement badges in the ANONYMOUS online learning environment where students solve interactive, automatically assessed exercises in a Data Structures and Algorithms course throughout the semester. We conducted an experiment where the students (N=281 were randomly divided into a treatment and a control group, with and without achievement badges. Students in the treatment group were awarded achievement badges, for example, for solving exercises on the first attempt, doing exercises early, or solving all the exercises in a round with full points. Grading was the same for both groups, i.e. collecting badges did not affect the final grade, even though the exercise points themselves did. Students’ activity in ANONYMOUS was logged in order to find out whether the achievement badges had an effect on their behavior. We also collected numerical and open-ended feedback in order to find out students’ attitudes towards the badges. Our results show that achievement badges can be used to affect students’ behavior. Statistically significant differences were observed in the time used per exercise, number of sessions, total time, and normalized total number of badges. Furthermore, the majority of the students reported being motivated by the badges. Based on our findings, achievement badges seem to be a promising method to motivate students and to encourage desired study practices.

Girl Scout Camps and Badges: Engaging Girls in NASA Science

Science.gov (United States)

Harman, P. K.; DeVore, E. K.

2017-12-01

Reaching for the Stars: NASA Science for Girl Scouts (Girl Scout Stars) disseminates NASA STEM education-related resources, fosters interaction between Girl Scouts and NASA Subject Matter Experts (SMEs), and engages Girl Scouts in NASA science and programs through space science badges and summer camps. A space science badge is in development for each of the six levels of Girl Scouts: Daisies, Grades K - 1; Brownies, Grades 2 -3; Juniors, Grades 4 -5; Cadettes, Grades 6 -8; Seniors, Grades 9 -10: and Ambassadors, Grades 11 -12. Daisy badge will be accomplished by following three steps with two choices each. Brownie to Ambassador badges will be awarded by completing five steps with three choices for each. The badges are interwoven with science activities, role models (SMEs), and steps that lead girls to explore NASA missions. External evaluators monitor three rounds of field-testing and deliver formative assessment reports. Badges will be released in Fall of 2018 and 2019. Girl Scout Stars supports two unique camp experiences. The University of Arizona holds an Astronomy Destination, a travel and immersion adventure for individual girls ages 13 and older, which offers dark skies and science exploration using telescopes, and interacting with SMEs. Girls lean about motion of celestial objects and become astronomers. Councils send teams of two girls, a council representative and an amateur astronomer to Astronomy Camp at Goddard Space Flight Center. The teams were immersed in science content and activities, and a star party; and began to plan their new Girl Scout Astronomy Clubs. The girls will lead the clubs, aided by the council and amateur astronomer. Camps are evaluated by the Girl Scouts Research Institute. In Girl Scouting, girls discover their skills, talents and what they care about; connect with other Girl Scouts and people in their community; and take action to change the world. This is called the Girl Scout Leadership Experience. With girl-led, hands on

Feasibility study on using three element TLD badge based on CaSO4:Dy as environmental dosimeter

International Nuclear Information System (INIS)

Choudhary, Sreeletha; BharathiLashmi, G.V.; Yasotha, E.; Devanathan, P.S.; Annalakshmi, O.; Mathiyarasu, R.

2018-01-01

A three element thermoluminescence badge based on CaSO 4 :Dy is used for personnel monitoring in India. The three discs of the badge is heated in sequential manner by hot nitrogen gas and from the amount of light emitted while heating, the doses are estimated. This badge was redesigned as a two element system and is used for environmental monitoring. Though the two element badge has some advantages, the software used for processing of TLDs in the semiautomatic reader has to be modified and separate badges has to be maintained for environmental dose measurements. In this work a feasibility study has been carried out to use the three element personnel monitoring badge itself for environmental monitoring also. This study was also carried out to understand the abnormal pattern of the glow curves observed in some field cards

Badges of modern slavery

OpenAIRE

Paz-Fuchs, Amir

2016-01-01

Notwithstanding the 19th century formal abolition of slavery as legal ownership of people, modern slavery and forced labour have not been consigned to the past. In fact, their existence is more widespread, and made more difficult to tackle due to the lack of formal, legal criteria. This article suggests that reference to the past, historical institutions reveals seven ‘badges of slavery’ that are helpful in identifying occurrences of modern slavery and forced labour. These are: humiliation, o...

Optical modeling and simulation of thin-film photovoltaic devices

CERN Document Server

Krc, Janez

2013-01-01

In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

A high-efficiency solution-deposited thin-film photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

2008-10-02

High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Recognising Informal Elearning with Digital Badging: Evidence for a Sustainable Business Model

Science.gov (United States)

Law, Patrina

2015-01-01

Digital badging as a trend in education is now recognised. It offers a way to reward and motivate, providing evidence of skills and achievements. Badged Open Courses (BOCs) were piloted by The Open University (OU) in 2013. The project built on research into the motivations and profiles of learners using free educational resources which the OU…

Experiences in the monitoring of radiation workers in industry and hospitals in the Philippines

International Nuclear Information System (INIS)

Mateo, A.J.

1976-08-01

The task of monitoring of radiation doses among radiation workers employed either in industry and hospitals in the Philippines is presently being undertaken by the Philippine Atomic Energy Commission. These radiation monitoring devices cover not only radioactive materials or sources but also x-ray machines. The most common dosimetry used is the film badge. This paper presents some of the experiences gained in the use of the film badge and other dosimeters

Construction of pulse badge for upper extremities dosimetry in nuclear medicine

International Nuclear Information System (INIS)

Cunha, Cledison de Jesus; Souza, Divanizia do Nascimento

2005-01-01

In the manipulation of radioactive materials in nuclear medicine service the body parts of the worker who more is displayed to the ionizing radiation is hands, forearm and arm. Therefore it is necessary to developing badges for easy reproduction monitoring and low cost to determine the doses level radiation received by the worker in these extremities. The aim of this work is to investigation of a new pulse badge, that is developed with thermoluminescent detectors of CaSO 4 :Dy (TLD) in a small plate of acrylic, perforated cardboard to deposit the TLD. This set was involved in plastic to protect of humidity and other harmful ambient factors, moreover, a bracelet was inserted, adaptable for any worker. This badge had been gotten resulted satisfactory, with a reply to the enough dose for a dosimetric evaluation. (author)

Using badges to motivate and engage students

DEFF Research Database (Denmark)

Christensen, Inger-Marie F.; Hansen, Pernille Stenkil

The gap between educational institutions and students is widening. Many institutions maintain traditional methods and adopt new at a slow pace. Some educators and developers are looking to gamification to bridge the gap. This workshop will help participants’ explore the potential of badges...

Unusual ratio of TL readouts of different discs of personnel monitoring TLD badge based on CaSO4: Dy teflon disc

International Nuclear Information System (INIS)

Pradhan, S.M.; Ande, C.D.; Kher, R.K.; Chourasiya, G.; Vashishtha, R.; Gupta, A.K.

2005-01-01

In India Personnel Monitoring against external radiation hazard of gamma, beta and X-rays is provided using a TLD badge based on CaSO 4 : Dy Teflon TLD disc. Unusual ratios of TL readouts of different discs of TLD badge (Disc Ratios) observed for service TLD badges of radiation workers were investigated and simulated. Simulations were carried out by exposure of TLD badges by speck type radioactive sources placed in contact of badges, exposure of TLD badges placed on concrete floor to a radiography source. Clues for the simulation were obtained from nature of work, radiological conditions during course of individuals' work whose TLD badges showed the unusual disc ratios and geometrical calculations performed. It is concluded that although the actual exposure condition during use is unknown, the unusual disk ratios observed for the service TLD badges can be simulated and utilized to arrive at probable exposure conditions. The study helped in investigations of the abnormal exposures and assigning doses to the concerned radiation workers. (author)

Opportunities and Challenges with Digital Open Badges

Science.gov (United States)

Farmer, Tadd; West, Richard E.

2016-01-01

With increasing interest in competency and outcome-based education, and the blending of formal and informal learning, there is increasing need for credentials to match these learning paradigms. In this article, the authors discuss the benefits, challenges, and potential future directions for open digital badges--one potential alternative…

Studies on α-Al2O3: C based optically stimulated luminescence badge for eye lens monitoring applications

International Nuclear Information System (INIS)

Kumar, Munish; Kulkarni, M.S.; Ratna, P.; Gaikwad, N.; Tripathi, S.M.; Sharma, S.D.; Babu, D.A.R.; Bhatnagar, Amit; Muthe, K.P.; Sharma, D.N.

2014-01-01

The prototype two element eye-lens dosimeter badge based on indigenously developed α-Al 2 O 3 : C optically stimulated luminescence dosimeter was investigated comprehensively for its suitability for eye-lens monitoring applications. The badge is calibrated to measure the eye-lens dose in terms of H p (3). The minimum measurable dose using the eye-lens dosimeter badge is observed to be ∼ 35 μSv. This prototype eye-lens dosimeter badge was found to be suitable for measuring doses from X-rays, beta and gamma radiations to the eye-lens. The satisfactory performance of the prototype two element eye-lens dosimeter badge along with its attractive features such as multiple readout, less processing time, very good beta response uniquely position it for monitoring the eye-lens dose are presented. (author)

Buy badges and help finance Cap Loisirs activities!

CERN Multimedia

2008-01-01

Please give a warm welcome to Cap Loisirs’ volunteers who will be manning a stand at the main entrance on Friday 8 February! In honour of St. Valentine’s Day, they will be selling a selection of 5 badges designed by artist Anna Sommer, depicting declarations of love by our friends from the animal kingdom. Price : Frs. 3.- per badge The aim of Fondation Cap Loisirs is to provide leisure activities for mentally handicapped children, adolescents and adults. The Foundation offers a wide range of activities which allow the mentally handicapped to enjoy quality leisure in areas as varied as culture, sport, tourism, travel and artistic expression. Fondation Cap Loisirs Rue de Monthoux 66 – 1201 Geneva – Tel: 022 731 86 00 – CCP Genève 12-5587-5 – caploisirs@caploisirs.ch – http://www.Caploisirs.ch

α-sealed transfer device and portable plastic film sealers

International Nuclear Information System (INIS)

Fu Zhujun; Shan Ruixia

1990-04-01

An α transfer device which can be operated remotely is presented. The device is able to perform sealed transfer of radioactive articles from a hot cell or shielded glove box to the outside and non-radioactive articles from the outside to a hot cell or shielded glove box by using bag sealing technology. The structure of the transfer device is simple. Its operation is safe and reliable. The sealing performance of the device is very good (for alpha). The use of this transfer device will greatly reduce α contamination of the building and creates a favourable condition for operating radioactive materials in an undivided area. The portable heat sealing device is also a necessary tool in bag sealing technology and α-sealed transfer. Two types of portable plastic film sealers have been developed. Their structure is simple. The operation of the portable plastic film sealers is easy. Their performance is also excellent. Both the α-sealed transfer device and portable plastic film sealers are very useful to the reprocessing plant of nuclear fuel

Photon and neutron doses of the personnel using moisture and density measurement devices

Energy Technology Data Exchange (ETDEWEB)

Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V. [Greek Atomic Energy Commission, Agia Paraskevi, Attiki, 60092 (Greece)

2006-07-01

The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a {sup 137}Cs source for density measurements and an {sup 241}Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

Photon and neutron doses of the personnel using moisture and density measurement devices

International Nuclear Information System (INIS)

Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V.

2006-01-01

The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a 137 Cs source for density measurements and an 241 Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

Tutoring Online Tutors: Using Digital Badges to Encourage the Development of Online Tutoring Skills

Science.gov (United States)

Hrastinski, Stefan; Cleveland-Innes, Martha; Stenbom, Stefan

2018-01-01

Online tutors play a critical role in e-learning and need to have an appropriate set of skills in addition to subject matter expertise. This paper explores how digital badges can be used to encourage the development of online tutoring skills. Based on previous research, we defined three digital badges, which are examples of essential tutoring…

Hydrazine-based deposition route for device-quality CIGS films

International Nuclear Information System (INIS)

Mitzi, David B.; Yuan, Min; Liu, Wei; Kellock, Andrew J.; Chey, S. Jay; Gignac, Lynne; Schrott, Alex G.

2009-01-01

A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C

Hydrazine-based deposition route for device-quality CIGS films

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B. [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)], E-mail: dmitzi@us.ibm.com; Yuan, Min; Liu, Wei [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Kellock, Andrew J [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States); Chey, S Jay; Gignac, Lynne; Schrott, Alex G [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)

2009-02-02

A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.

Design Principles for Digital Badges Used in Libraries

Science.gov (United States)

Rimland, Emily; Raish, Victoria

2017-01-01

Digital badges give libraries greater flexibility in delivering impactful instruction to students. They serve as flexible, stackable microcredentials that sequence an information literacy experience across the curriculum. Design considerations rooted in learning theory have a foundation through which to drive decisions. Information literacy badges…

Polycaprolactone Thin-Film Micro- and Nanoporous Cell-Encapsulation Devices.

Science.gov (United States)

Nyitray, Crystal E; Chang, Ryan; Faleo, Gaetano; Lance, Kevin D; Bernards, Daniel A; Tang, Qizhi; Desai, Tejal A

2015-06-23

Cell-encapsulating devices can play an important role in advancing the types of tissue available for transplantation and further improving transplant success rates. To have an effective device, encapsulated cells must remain viable, respond to external stimulus, and be protected from immune responses, and the device itself must elicit a minimal foreign body response. To address these challenges, we developed a micro- and a nanoporous thin-film cell encapsulation device from polycaprolactone (PCL), a material previously used in FDA-approved biomedical devices. The thin-film device construct allows long-term bioluminescent transfer imaging, which can be used for monitoring cell viability and device tracking. The ability to tune the microporous and nanoporous membrane allows selective protection from immune cell invasion and cytokine-mediated cell death in vitro, all while maintaining typical cell function, as demonstrated by encapsulated cells' insulin production in response to glucose stimulation. To demonstrate the ability to track, visualize, and monitor the viability of cells encapsulated in implanted thin-film devices, we encapsulated and implanted luciferase-positive MIN6 cells in allogeneic mouse models for up to 90 days. Lack of foreign body response in combination with rapid neovascularization around the device shows promise in using this technology for cell encapsulation. These devices can help elucidate the metrics required for cell encapsulation success and direct future immune-isolation therapies.

Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

Science.gov (United States)

Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

2015-09-15

Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

Directory of Open Access Journals (Sweden)

Y. Djaoued

2012-01-01

Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

Rapid deposition process for zinc oxide film applications in pyroelectric devices

International Nuclear Information System (INIS)

Hsiao, Chun-Ching; Yu, Shih-Yuan

2012-01-01

Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

Science.gov (United States)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

Screen-printed piezoceramic thick films for miniaturised devices

DEFF Research Database (Denmark)

Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

2007-01-01

machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

Periodicity of TLD badge personnel monitoring service in India

International Nuclear Information System (INIS)

Kher, R.K.; Joshi, V.D.; Kaushik, Aruna; Sharma, Amiy; Chatterjee, S.

2003-01-01

The periodicity of an individual monitoring service is an important aspect. Presently minimum period for TLD badge service is maintained as 'calendar month' and choice of quarterly service is also offered. The periodicity of the TLD service for a given category/application type of institution, is to be fixed taking into account level of average occupational doses in all or typical institutions of given category and other information indicating the status of safety and possible fluctuations of exposure levels and potential for overexposure cases. This paper presents the status on the periodicity of TLD Badge Service as is evolved and adopted for the four broad categories i.e. DAE (Nuclear Fuel Cycle) Institutions, Industrial, Medical, Research institutions. It is concluded that quarterly service is a convenient option for institution categories where type of work/workload, and work practices are such that occupational exposures could be normally kept below about one mSv or so in the monitoring period, average annual dose less than 1 mSv and persons receiving annual dose >10 mSv is less than 1% of total in the category. Also, the judicious use of the flexibility in the periodicity of TLD Badge service would help (i) to keep the monitoring related workload to the optimum for the monitoring units and (ii) to keep the expenses incurred by the institution towards monitoring to the minimum without sacrificing radiation safety (iii) to focus the extra monitoring efforts on the applications/situations requiring improvement in radiation safety. (author)

ZnO film for application in surface acoustic wave device

International Nuclear Information System (INIS)

Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

2007-01-01

High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Gamification of Nursing Education With Digital Badges.

Science.gov (United States)

White, Meagan; Shellenbarger, Teresa

Digital badges (DBs) serve as an innovative approach to gamifying nursing education by engaging socially connected, technologically savvy nursing students in learning. Because assessment and credentialing mechanisms are housed and managed online, DBs are designed as visible indicators of accomplishment and skill. This article describes important considerations for faculty when incorporating game-based pedagogies such as DB into nursing education and identifies potential pitfalls with DB use that faculty should consider.

N2 gas station and gas distribution system for TLD personnel monitoring gas based semi-automatic badge readers

International Nuclear Information System (INIS)

Chourasiya, G.; Pradhan, S.M.; Kher, R.K.; Bhatt, B.C

2003-01-01

Full text: New improvised hot gas based Auto TLD badge reader has several advantages over the earlier contact heating based manual badge reader. It requires constant supply of N 2 gas for its operation; The gas supplied using replaceable individual gas cylinders may have some safety hazards in their handling. It was therefore considered worthwhile to setup a N 2 gas assembly/ station outside the lab area and to bring regulated gas supply through network of tubes with proper regulation to the individual readers. The paper presents detailed description of the gas station and distribution system. The system is quite useful and offers several practical advantages for readout of TLD badges on the semiautomatic badge readers based on gas heating. Important advantage from dosimetric point of view is avoidance of gas flow rate fluctuations and corresponding variations in TL readouts

Analysis of reaction products of food contaminants and ingredients: Bisphenol A diglycidyl ether (BADGE) in canned foods

NARCIS (Netherlands)

Coulier, L.; Bradley, E.L.; Bas, R.C.; Verhoeckx, K.C.M.; Driffield, M.; Harmer, N.; Castle, L.

2010-01-01

Bisphenol A diglycidyl ether (BADGE) is an epoxide that is used as a starting substance in the manufacture of can coatings for food-contact applications. Following migration from the can coating into food, BADGE levels decay and new reaction products are formed by reaction with food ingredients. The

Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

Science.gov (United States)

Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

2015-04-08

Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

The actual state and problems of radiation control in medical facilities

International Nuclear Information System (INIS)

Kaneko, Masao

1978-01-01

Utilization of radiation was started in university hospitals, but recently, the established general inspections come to be very popular among general hospitals. Numerous kinds of nuclides are utilized for a number of purposes in university hospitals, while the kinds of nuclides utilized in general hospitals are quite limited. Concerning radiation safety control, film badge method is most popular among personal exposure control methods, while the combinations of film badge and pocket chamber methods, and film badge and TLD methods are also adopted. In many general hospitals, however, the exposure control tools are not equipped. Many kinds of safety control devices are installed for general controls. The laws so far mainly regulated the standards of buildings and installations, but did not specify the standard for accommodating RI-administered patients, and the preventive measures to secondary exposure and pollution, which often causes careless control. Therefore, the preventive measures to secondary injuries are required. (Kobatake, H.)

Magnetron sputtering fabrication and photoelectric properties of WSe2 film solar cell device

Science.gov (United States)

Mao, Xu; Zou, Jianpeng; Li, Hongchao; Song, Zhengqi; He, Siru

2018-06-01

Tungsten diselenide (WSe2) films with different growing orientations exhibit diverse photoelectric properties. The WSe2 film with C-axis⊥substrate texture has been prepared and applied to thin-film solar cells. W nanofilms with a thickness of 270 nm were deposited onto the Mo bottom electrode and then heat-treated in selenium vapor to synthesize WSe2 films with a thickness of 1 μm. ZnO films were deposited onto WSe2 films to form a P-N junction and ITO films were deposited subsequently as the conductive layer. X-ray diffractometry, scanning electron microscopy and UV-vis-NIR spectro-analysis instrument were employed to analyze the phase composition, optical absorptivity and micromorphology of WSe2 films and the WSe2 solar cell device. WSe2 films exhibit excellent photoelectric performance with an optical absorption coefficient greater than 105 cm-1 across the visible spectrum. The calculated direct and indirect band gap of the WSe2 films is 1.48 eV and 1.25 eV, respectively. With the application of standard glass/Mo/WSe2/ZnO/ITO/Ag device structure, the open-circuit voltage of the battery device is 82 mV. The short-circuit current density is 2.98 mA/cm2 and the filling factor is 0.32. The photoelectric conversion efficiency of the WSe2 film solar cell device is 0.79%.

Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

International Nuclear Information System (INIS)

Gayathri, A.G.; Joseph, C.M.

2016-01-01

Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

2016-09-15

Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

Durable transparent carbon nanotube films for flexible device components

International Nuclear Information System (INIS)

Sierros, K.A.; Hecht, D.S.; Banerjee, D.A.; Morris, N.J.; Hu, L.; Irvin, G.C.; Lee, R.S.; Cairns, D.R.

2010-01-01

This paper describes a durable carbon nanotube (CNT) film for flexible devices and its mechanical properties. Films as thin as 10 nm thick have properties approaching those of existing electrodes based on indium tin oxide (ITO) but with significantly improved mechanical properties. In uniaxial tension, strains as high as 25% are required for permanent damage and at lower strains resistance changes are slight and consistent with elastic deformation of the individual CNTs. A simple model confirms that changes in electrical resistance are described by a Poisson's ratio of 0.22. These films are also durable to cyclic loading, and even at peak strains of 10% no significant damage occurs after 250 cycles. The scratch resistance is also high as measured by nanoscratch, and for a 50 μm tip a load of 140 mN is required to cause initial failure. This is more than 5 times higher than is required to cause cracking in ITO. The robustness of the transparent conductive coating leads to significant improvement in device performance. In touch screen devices fabricated using CNT no failure occurs after a million actuations while for devices based on ITO electrodes 400,000 cycles are needed to cause failure. These durable electrodes hold the key to developing robust, large-area, lightweight, optoelectronic devices such as lighting, displays, electronic-paper, and printable solar cells. Such devices could hold the key to producing inexpensive green energy, providing reliable solid-state lighting, and significantly reducing our dependence on paper.

Matrix effect on leaching of Bisphenol A diglycidyl ether (BADGE) from epoxy resin based inner lacquer of aluminium tubes into semi-solid dosage forms.

Science.gov (United States)

Lipke, Uwe; Haverkamp, Jan Boris; Zapf, Thomas; Lipperheide, Cornelia

2016-04-01

To study the impact of different semi-solid dosage form components on the leaching of Bisphenol A (BPA) and Bisphenol A diglycidyl ether (BADGE) from the epoxy resin-based inner lacquer of aluminium tubes, the tubes were filled with different matrix preparations and stored at an elevated temperature. Despite compliance with the European Standards EN 15348 and EN 15766 on porosity and polymerisation of internal coatings of aluminium tubes, the commercially available tubes used in the study contained an increased amount of polymerisation residues, such as unbound BPA, BADGE and BADGE derivatives in the lacquer, as determined by acetonitrile extraction. Storage of Macrogol ointments in these tubes resulted in an almost quantitative migration of the unbound polymerisation residues from the coating into the ointment. In addition, due to alterations observed in the RP-HPLC chromatograms of the matrix spiked with BADGE and BADGE derivatives it is supposed that the leachates can react with formulation components. The contamination of the medicinal product by BPA, BADGE and BADGE derivatives can be precluded by using aluminium tubes with an internal lacquer with a low degree of unbound polymerisation residues. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

A device for checking the speeds and quality of X-ray films and efficiency of film processors

International Nuclear Information System (INIS)

Crooks, H.E.

1980-01-01

In order to carry out quality assurance tests of X-ray films, screens and processors, a standard exposure source of utmost reliability is desirable. The performance of apparatus containing yellow-green light emitting radioactive tritium activated phosphor, known as Betalight, is described. Over a period of 2 1/2 years, variations in film speeds up to +- 20% from nominally the same types of film have been observed. Additionally, substandard developer has been easily identified with the use of this device. The device is cheap and easy to manufacture, accurate and simple to use. (U.K.)

Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

Science.gov (United States)

Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

2017-04-01

We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

Open digital badges in Open edX

OpenAIRE

Hickey, Daniel T.; Barba, Lorena A.; Lemoie, Kerri; Amigot, Michael; Ewens, Damian

2014-01-01

Slides for the presentation at the Open edX Conference, Cambridge, MA 2014.   This talk presented the first public update of our collaboration to implement open digital badges in Dr. Barba's new MOOC, "Practical Numerical Methods with Python." It's a collaboration between Indiana University's Center for Research on Learning and Technology (led by Prof. Daniel T. Hickey);  Prof. Lorena Barba and her team at George Washington University, with her partners at IBL Studios Education, and...

Response of TLD badge for the estimation of exposure conditions in diagnostic x-ray departments - use of lead aprons

International Nuclear Information System (INIS)

Pradhan, A.S.; Chatterjee, S.; Bakshi, A.K.

2002-01-01

The present study was undertaken to ascertain the conditions of exposure of the TLD badge and to evaluate the inaccuracy involved in the estimation of dose received by the worker using an averaged lead apron transmission factor for the use of the badge above lead apron

Film Sensor Device Fabricated by a Piezoelectric Poly(L-lactic acid) Film

Science.gov (United States)

Ando, Masamichi; Kawamura, Hideki; Kageyama, Keisuke; Tajitsu, Yoshiro

2012-09-01

Synthetic piezoelectric polymer films produced from petroleum feedstock have long been used as thin-film sensors and actuators. However, the fossil fuel requirements for synthetic polymer production and carbon dioxide emission from its combustion have raised concern about the environmental impact of its continued use. Eco-friendly biomass polymers, such as poly(L-lactic acid) (PLLA), are made from plant-based (vegetable starch) plastics and, thus, have a much smaller carbon footprint. Additionally, PLLA does not exhibit pyroelectricity or unnecessary poling. This suggests the usefulness of PLLA films for the human-machine interface (HMI). As an example of a new HMI, we have produced a TV remote control using a PLLA film. The intuitive operation provided by this PLLA device suggests that it is useful for the elderly or handicapped.

a Brief Survey on Basic Properties of Thin Films for Device Application

Science.gov (United States)

Rao, M. C.; Shekhawat, M. S.

Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

NARCIS (Netherlands)

2005-01-01

A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

Sprayed films of europium complexes toward light conversion devices

Energy Technology Data Exchange (ETDEWEB)

Camacho, Sabrina A.; Aoki, Pedro H.B.; Constantino, Carlos J.L.; Pires, Ana Maria, E-mail: anapires@fct.unesp.br

2014-09-15

Rare-earth complexes have become subject of intensive research due to the high quantum efficiency of their emission, very narrow bands, and excellent fluorescence monochromaticity. The chemical design and characterization of Eu complexes based on β-diketone ligands hexafluoroacetylacetate (hfac) and dibenzoylmetanate (dbm) is reported here. K[Eu(dbm){sub 4}] and K[Eu(hfac){sub 4}] complexes were immobilized as thin films by using the spray technique, a promising methodology for practical applications. The latter provides not only a faster layer deposition but also larger coated areas compared to conventional methods, such as layer-by-layer (LbL) and Langmuir–Blodgett (LB). The growth of the sprayed films was monitored through microbalance (QCM) and ultraviolet–visible (UV–Vis) absorption spectroscopy, which reveal a higher mass and absorbance per deposited layer of K[Eu(dbm){sub 4}] film. Micro-Raman images display a more homogeneous spatial distribution of the K[Eu(dbm){sub 4}] complex throughout the film, when compared to K[Eu(hfac){sub 4}] film. At nanometer scale, atomic force microscopy (AFM) images indicate that the roughness of the K[Eu(hfac){sub 4}] film is approximately one order of magnitude higher than that for the K[Eu(dbm){sub 4}] film, which pattern is kept at micrometer scale according to micro-Raman measurements. The photoluminescence data show that the complexes remain as pure red emitters upon spray immobilization. Besides, the quantum efficiency for the sprayed films are found equivalent to the values achieved for the powders, highlighting the potential of the films for application in light conversion devices. - Highlights: • Rare earth complexes thin films based on β-diketone ligands. • Spraying procedures to fabricate layer-by-layer (LbL) luminescent thin films. • Chemical design of Eu complexes based on hfac and dbm β-diketones ligands immobilized as sprayed films. • Pure red emitters upon spray immobilization. • Sprayed

Feasibility Study on Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation

International Nuclear Information System (INIS)

Jung, Inha

2013-12-01

This report on the 'Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation' is belonged to the final report on the preliminary study of the first subject in 2013 for civilian project. This was complimented on the responsible of the Korea Atomic Energy Research Institute for 1 st of June 2013 to 30 th of November 2013. We are going to make sterilization the badge using the gamma ray and supplying the oxygen by nano-bubble oxygen rich water for cultivating the Matsutake Mushroom, instead of the conventional process of sterilization of the badge by hot steam over 120 .deg. C consuming over 8 hours and expensive ventilation system for supplying the fresh air for delivering the oxygen

Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

Directory of Open Access Journals (Sweden)

Ziyang Hu

2011-01-01

Full Text Available Indium-doped zinc oxide (IZO thin films were prepared by low-cost ultrasonic spray pyrolysis (USP. Both a low resistivity (3.13×10−3 Ω cm and an average direct transmittance (400∼1500 nm about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV devices based on poly(3-hexylthiophene and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

Calibration of the indium foil used for criticality accident dosimetry in the UCC-ND employee identification badge

International Nuclear Information System (INIS)

Ryan, M.T.; Butler, H.M.; Gupton, E.D.; Sims, C.S.

1982-05-01

The UCC-ND Employee Identification Badge contains an indium foil disc that is intended for use as a dosimetry screening device in the event of a criticality accident. While it is recognized that indium is not a precise mixed neutron-gamma dosimeter, its activation by neutrons provides adequate means for separating potentially exposed persons into three groups. These groups are: (1) personnel exposed below annual dose limits, (2) personnel exposed above annual dose limits but below 25 rem, and (3) personnel exposed above 25 rem. This screening procedure is designed to facilitate dosimeter processing in order to meet regulatory reporting requirements. A quick method of interpreting induced activity measurements is presented and discussed

Organic nonvolatile memory devices with charge trapping multilayer graphene film

International Nuclear Information System (INIS)

Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

2012-01-01

We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

Digital dosimetry and personal and environmental monitoring assembly

International Nuclear Information System (INIS)

Cerovac, Z.; Radalj, Z.; Prlic, I.; Cerovac, H.

1996-01-01

Film+TLD and film or TLD Dosimetry have a certain delay in dose reporting, since the reports on occupational doses are usually available to the users within 40 days after the actual exposure. This is particularly important when the dose is received within the short-time interval or when the radiation source has some technical failures. For this reason, the additional monitoring is recommendable. The common Dosimetry service in Croatia is well established and the data available shows that over 80% of occupationally exposed persons are working in medical facilities, mainly with x-ray sources. Dosimetry services in the country are providing three types of dosemeters, film dosemeter badge, film+TLD dosemeter badge or plane TLD badge. We have decided to introduce the palette of digital pocket dosemeters to be used at different workplaces occupationally exposed to ionizing radiation. After the first experience with the ALARA 1G digital dosemeter it came out that this type of ionizing radiation measuring device is suitable for the various non-occupational purposes. After some technical improvement and with some telecommunication electronics this device is usable as a point environmental measuring station. This means that the probe of the record any change in normal environmental radiation field, send the data to the central station and to raise alarm if necessary. That is why we have made a prototype for environmental monitoring able to be connected to any kind of telecommunication net. (author)

Feasibility Study on Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation

Energy Technology Data Exchange (ETDEWEB)

Jung, Inha

2013-12-15

This report on the 'Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation' is belonged to the final report on the preliminary study of the first subject in 2013 for civilian project. This was complimented on the responsible of the Korea Atomic Energy Research Institute for 1{sup st} of June 2013 to 30{sup th} of November 2013. We are going to make sterilization the badge using the gamma ray and supplying the oxygen by nano-bubble oxygen rich water for cultivating the Matsutake Mushroom, instead of the conventional process of sterilization of the badge by hot steam over 120 .deg. C consuming over 8 hours and expensive ventilation system for supplying the fresh air for delivering the oxygen.

Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

Science.gov (United States)

An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

2015-02-01

Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

Elaboration of a semiconductive thin film device technology on the basis of monocrystalline gallium arsenide

International Nuclear Information System (INIS)

Antoshenko, V.; Taurbaev, T.; Skirnevskaya, E.; Shorin, V.; Mihajlov, L.; Bajganatova, Sh.

1996-01-01

The aim of the project: To elaborate the economical technological process of preparing super thin monocrystalline GaAs substrates and device structures for semiconductive electronics. To realize the project it is necessary to solve following problems: o to elaborate and produce the equipment for preparing of separated films and thin film multilayer structures with p-n-junction; - to study conditions of preparing plane crystal perfect separated Ga(Al)As - films; - to optimize regimes of preparing thin film structures with p- and n-conductive - layers; - to determine the optimal methods of transferring autonomous films and structures over the second substrates; - to work out preparing methods of ohmic contacts and electrical commutation; - to optimize the process of repeated use of initial monocrystalline GaAs substrate; - to prepare the samples of discrete thin film photo- and emitting devices. As the result of project realization there will be created cheap ecological technology of heterojunction optoelectronic devices on the basis of GaAs and AlGaAs solid solutions, the laboratory samples of thin film devices will be presented

A comparison of charged coupled devices and film sensitivities

International Nuclear Information System (INIS)

Wallick, W.O.; Kenyon, R.G.; Lubatti, H.J.

1977-01-01

The response of a charged coupled device (Fairchild CCD-202) to a Ne light source is studied and compared to the Kodak SO-143 film commonly used for streamer chamber applications. It is found that the CCD-202 cooled to - 10 0 C is considerebly more sensitive than the film. The advantages of using a CCD camera system for streamer chamber and other applications is discussed. (Auth.)

PZT Thin-Film Micro Probe Device with Dual Top Electrodes

Science.gov (United States)

Luo, Chuan

Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths

Thin-film Rechargeable Lithium Batteries for Implantable Devices

Science.gov (United States)

Bates, J. B.; Dudney, N. J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Enhancement of photovoltaic characteristics of nanocrystalline 2,3-naphthalocyanine thin film-based organic devices

International Nuclear Information System (INIS)

Farag, A.A.M.; Osiris, W.G.; Ammar, A.H.

2012-01-01

Graphical abstract: Scanning electron microscopy (SEM) image of NPC films: (a) cross section view, (b) surface morphology of the film at 300 K, (c) surface morphology of the annealed film at 350 K, (d) surface morphology of the annealed film at 400 K, (e) surface morphology of the annealed film at 450 K, and (f) surface morphology of the annealed film at 500 K. Highlights: ► The absorption edge shifts to the lower energy for the annealed NPC film. ► The device of Au/NPC/ITO exhibit rectifying characteristics. ► The devices show improvement in photovoltaic parameters. ► The power conversion efficiency of the devices show enhancement under annealing. - Abstract: In this work, nanocrystalline thin films of 2,3-naphthalocyanine (NPC) were successfully deposited by a thermal evaporation technique at room temperature under high vacuum (∼10 −4 Pa). The crystal structure and surface morphology were measured using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. A preferred orientation along the (0 0 1) direction was observed in all the studied films and the average crystallite size was calculated. Scanning electron miscroscopy (SEM) images of NPC films at different thermal treatment indicated significant changes on surface level patterns and gave clear evidence of agglomeration of nanocrystalline structures. The molecular structural properties of the thin films were characterized using Fourier transform infrared spectroscopy (FTIR), which revealed the stability of the chemical bonds of the compound under thermal treatment. The dark electrical conductivity of the films at various heat treatment stages showed that NPC films have a better conductivity than that of its earlier reported naphthalocyanine films and the activation energy was found to decrease with annealing temperature. The absorption edge shifted to the lower energy as a consequence of the thermal annealing of the film and the fundamental absorption edges correspond to a

Thin-film luminescent concentrators for integrated devices: a cookbook.

Science.gov (United States)

Evenson, S A; Rawicz, A H

1995-11-01

A luminescent concentrator (LC) is a nonimaging optical device used for collecting light energy. As a result of its unique properties, a LC also offers the possibility of separating different portions of the spectrum and concentrating them at the same time. Hence, LC's can be applied to a whole range of problems requiring the collection, manipulation, and distribution or measurement of light. Further-more, as described in our previous research, thin-film LC elements can be deposited directly over sensor and processing electronics in the form of integrated LC devices. As an aid to further research, the materials and technology required to fabricate these thin-film LC elements through the use of an ultraviolet-curable photopolymer are documented in detail.

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.; Fan, Shanhui

2010-01-01

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

Study on film resistivity of Energy Conversion Components for MEMS Initiating Explosive Device

Science.gov (United States)

Ren, Wei; Zhang, Bin; Zhao, Yulong; Chu, Enyi; Yin, Ming; Li, Hui; Wang, Kexuan

2018-03-01

Resistivity of Plane-film Energy Conversion Components is a key parameter to influence its resistance and explosive performance, and also it has important relations with the preparation of thin film technology, scale, structure and etc. In order to improve the design of Energy Conversion Components for MEMS Initiating Explosive Device, and reduce the design deviation of Energy Conversion Components in microscale, guarantee the design resistance and ignition performance of MEMS Initiating Explosive Device, this paper theoretically analyzed the influence factors of film resistivity in microscale, through the preparation of Al film and Ni-Cr film at different thickness with micro/nano, then obtain the film resistivity parameter of the typical metal under different thickness, and reveals the effect rule of the scale to the resistivity in microscale, at the same time we obtain the corresponding inflection point data.

Organic Photovoltaic Devices Based on Oriented n-Type Molecular Films Deposited on Oriented Polythiophene Films.

Science.gov (United States)

Mizokuro, Toshiko; Tanigaki, Nobutaka; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

2018-04-01

The molecular orientation of π-conjugated molecules has been reported to significantly affect the performance of organic photovoltaic devices (OPVs) based on molecular films. Hence, the control of molecular orientation is a key issue toward the improvement of OPV performance. In this research, oriented thin films of an n-type molecule, 3,4,9,10-Perylenetetracarboxylic Bisbenzimida-zole (PTCBI), were formed by deposition on in-plane oriented polythiophene (PT) films. Orientation of the PTCBI films was evaluated by polarized UV-vis spectroscopy and 2D-Grazing incidence X-ray diffraction. Results indicated that PTCBI molecules on PT film exhibit nearly edge-on and in-plane orientation (with molecular long axis along the substrate), whereas PTCBI molecules without PT film exhibit neither. OPVs composed of PTCBI molecular film with and without PT were fabricated and evaluated for correlation of orientation with performance. The OPVs composed of PTCBI film with PT showed higher power conversion efficiency (PCE) than that of film without PT. The experiment indicated that in-plane orientation of PTCBI molecules absorbs incident light more efficiently, leading to increase in PCE.

Spin coated graphene films as the transparent electrode in organic photovoltaic devices

International Nuclear Information System (INIS)

Kymakis, E.; Stratakis, E.; Stylianakis, M.M.; Koudoumas, E.; Fotakis, C.

2011-01-01

Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C 61 -butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

Closed-loop model: An optimization of integrated thin-film magnetic devices

Energy Technology Data Exchange (ETDEWEB)

El-Ghazaly, Amal, E-mail: amale@stanford.edu [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Sato, Noriyuki [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); White, Robert M. [Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Wang, Shan X. [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States)

2017-06-15

Highlights: • An analytical model for inductance of thin-film magnetic devices was developed. • Different device topologies and magnetic permeabilities were addressed. • Inductance of various topologies were calculated and compared with simulation. • The model predicts simulated values with excellent accuracy. - Abstract: A generic analytical model has been developed to fully describe the flux closure through magnetic inductors. The model was applied to multiple device topologies including solenoidal single return path and dual return path inductors as well as spiral magnetic inductors for a variety of permeabilities and dimensions. The calculated inductance values from the analytical model were compared with simulated results for each of the analyzed device topologies and found to agree within 0.1 nH for the range of typical thin-film magnetic permeabilities (∼10{sup 2} to 10{sup 3}). Furthermore, the model can be used to evaluate behavior in other integrated or discrete magnetic devices with either non-isotropic or isotropic permeability and used to produce more efficient device designs in the future.

AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

International Nuclear Information System (INIS)

Wang, W B; Xuan, W P; Chen, J K; Wang, X Z; Luo, J K; Fu, Y Q; Chen, J J; Duan, P F; Mayrhofer, P; Bittner, A; Schmid, U

2016-01-01

This paper reports the characterization of scandium aluminum nitride (Al 1−xS c xN , x   =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients ( K 2 , ∼2%) compared with pure AlN films (<0.5%). The performance of the two types of devices was also investigated and compared, using acoustofluidics as an example. The AlScN/Si SAW devices achieved much lower threshold powers for the acoustic streaming and pumping of liquid droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices. (paper)

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

Science.gov (United States)

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Digital Badges for Staff Training: Motivate Employees to Learn with Micro-Credentials

Science.gov (United States)

Copenhaver, Kimberly; Pritchard, Liz

2017-01-01

Integrating micro-credentialing into employee training programs offers libraries an innovative and individualized way to recognize and certify learning and achievement. Digital badges provide a low-cost initiative to support learning benefiting both the individual and institution, offering evidence of skill development that transcends the library…

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

Science.gov (United States)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Recognising Informal Elearning with Digital Badging: Evidence for a Sustainable Business Model

Directory of Open Access Journals (Sweden)

Patrina Law

2015-11-01

Full Text Available Digital badging as a trend in education is now recognised. It offers a way to reward and motivate, providing evidence of skills and achievements. Badged Open Courses (BOCs were piloted by The Open University (OU in 2013. The project built on research into the motivations and profiles of learners using free educational resources which the OU makes available through its OpenLearn platform (Law, Perryman & Law, 2013. This research found that an increasing proportion of learners are keen to have their informal learning achievements recognised (Law & Law, 2014. Based on these data, a suite of free BOCs, assessed through the deployment of Moodle quizzes, was launched. This paper reports on evaluation of the BOCs and what we now know of the strategic importance of informal learning recognition. The initiative aligns with University strategies to provide accessible routes into formal learning for those who might not otherwise have the opportunity.

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

Science.gov (United States)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

Science.gov (United States)

Munshi, Amit Harenkumar

CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

Three-dimensional ordered titanium dioxide-zirconium dioxide film-based microfluidic device for efficient on-chip phosphopeptide enrichment.

Science.gov (United States)

Zhao, De; He, Zhongyuan; Wang, Gang; Wang, Hongzhi; Zhang, Qinghong; Li, Yaogang

2016-09-15

Microfluidic technology plays a significant role in separating biomolecules, because of its miniaturization, integration, and automation. Introducing micro/nanostructured functional materials can improve the properties of microfluidic devices, and extend their application. Inverse opal has a three-dimensional ordered net-like structure. It possesses a large surface area and exhibits good mass transport, making it a good candidate for bio-separation. This study exploits inverse opal titanium dioxide-zirconium dioxide films for on-chip phosphopeptide enrichment. Titanium dioxide-zirconium dioxide inverse opal film-based microfluidic devices were constructed from templates of 270-, 340-, and 370-nm-diameter poly(methylmethacrylate) spheres. The phosphopeptide enrichments of these devices were determined by matrix-assisted laser desorption/ionization time-of-flight (MALDI-TOF) mass spectrometry. The device constructed from the 270-nm-diameter sphere template exhibited good comprehensive phosphopeptide enrichment, and was the best among these three devices. Because the size of opal template used in construction was the smallest, the inverse opal film therefore had the smallest pore sizes and the largest surface area. Enrichment by this device was also better than those of similar devices based on nanoparticle films and single component films. The titanium dioxide-zirconium dioxide inverse opal film-based device provides a promising approach for the efficient separation of various biomolecules. Copyright © 2016 Elsevier Inc. All rights reserved.

Science and technology of biocompatible thin films for implantable biomedical devices.

Energy Technology Data Exchange (ETDEWEB)

Li, W.; Kabius, B.; Auciello, O.; Materials Science Division

2010-01-01

This presentation focuses on reviewing research to develop two critical biocompatible film technologies to enable implantable biomedical devices, namely: (1) development of bioinert/biocompatible coatings for encapsulation of Si chips implantable in the human body (e.g., retinal prosthesis implantable in the human eye) - the coating involves a novel ultrananocrystalline diamond (UNCD) film or hybrid biocompatible oxide/UNCD layered films; and (2) development of biocompatible films with high-dielectric constant and microfabrication process to produce energy storage super-capacitors embedded in the microchip to achieve full miniaturization for implantation into the human body.

AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

OpenAIRE

Wang, Wenbo; Fu, Yong Qing; Chen, Jinju; Xuan, Weipeng; Chen, Jinkai; Mayrhofer, Paul; Duan, Pengfei; Bittner, Elmar; Luo, Jikui

2016-01-01

This paper reports the characterization of scandium aluminum nitride (Al1−x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (

Design of photon energy compensation filters for the new four element CaSO4:Dy TLD badge

International Nuclear Information System (INIS)

Mishra, D.R.; Kulkarni, M.S.; Pradeep, Ratna; Kannan, S.

2001-01-01

A new four element TLD badge using CaSO 4 :Dy is being developed for the estimation of personal dose equivalents Hp(10) and Hp(0.07) and to discriminate them in the mix field (low energy x-ray and high energy γ-ray). Design of energy compensation filters for the new TLD badge is discussed. The total metal filter thickness is kept less than 1 mm. The first and second elements of the badge are planned to be open and plastic (≅180 gm/cm 2 ) window. For the third element a combination of 0.2 mm Sn + 0.7mm Cu + 0.1 mm Al with mass thickness ≅ 1100 mg/cm 2 is proposed which gives energy dependent response similar to Hp(10) within ± 20% (above 80 keV). For the fourth dosimeter a filter combination of 0.4 mm Al + 0.07 mm Sn is proposed which gives Hp(10)xR response for diagnostic x-rays within ± 10% in the mix field. (author)

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

Science.gov (United States)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir; Tischler, Jonathan R.; Tisdale, William A.; Walker, Brian J.

2017-12-12

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Method for the manufacture of a thin film electrochemical energy source and device

NARCIS (Netherlands)

2008-01-01

The invention relates to a method for the manuf. of a thin film electrochem. energy source. The invention also relates to a thin film electrochem. energy source. The invention also relates to an elec. device comprising such a thin film electrochem. energy source. The invention enables a more rapid

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

2017-01-01

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

Recent developments of truly stretchable thin film electronic and optoelectronic devices.

Science.gov (United States)

Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

2018-03-29

Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

International Nuclear Information System (INIS)

Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

2011-01-01

In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

Polymer−metal organic framework composite films as affinity layer for capacitive sensor devices

NARCIS (Netherlands)

Sachdeva, S.; Gravesteijn, Dirk J; Soccol, D.; Kapteijn, F.; Sudhölter, E.J.R.; Gascon, J.; Smet, de L.C.P.M.

2016-01-01

We report a simple method for sensor development using polymer-MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer. Sensing

Polymer-metal organic framework composite films as affinity layer for capacitive sensor devices

NARCIS (Netherlands)

Sachdeva, Sumit; Soccol, Dimitri; Gravesteijn, Dirk J.; Kapteijn, Freek; Sudhölter, E.J.R.; Gascon, Jorge; Smet, de L.C.P.M.

2016-01-01

We report a simple method for sensor development using polymer-
MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid
polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer.

Recent progress on thin-film encapsulation technologies for organic electronic devices

Science.gov (United States)

Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

2016-03-01

Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

Use of lead aprons - further considerations of estimation of doses and conditions of acute exposures of TLD badge in diagnostic x-ray institutions

International Nuclear Information System (INIS)

Pradhan, A.S.; Chatterjee, S.

2003-01-01

In the recent study the authors reported that the exposure conditions of the use of the TLD badge, whether worn under or over the lead apron could be estimated from the readout of the TLD badge used in X-ray diagnostic departments. The effectiveness of lead aprons procured from different suppliers having the same value of quoted nominal lead equivalence was found to vary severely and this indicated some limitation in the applicability of the method of evaluation of exposure conditions of the badge. The transmission factors for the lead aprons varied up to a factor of 15 for the same value of quoted nominal lead equivalence procured from three different suppliers. This is of serious consequences in radiation protection and attracts attention for quality control. An error in the estimation of the exposure conditions of the TLD badge could lead to an underestimation of doses up to 4 times using the prevalent method. The estimation of the actual doses of radiation workers in the cases of over-exposures for the situations of the use of the TLD badge over the lead apron showed that the variation in the quality of lead aprons could be wrong in the range from 1.6 to 25 times even if the kVp of the machine is exactly known. Therefore, attempt should not be made to estimate the actual doses under lead apron from the readout of the TLD badge worn over the apron, as the real values of the transmission factors of the aprons and kVp of the X-ray machine may not be available. (author)

Nobels Nobels laureates photographed by Peter Badge

CERN Document Server

2008-01-01

A unique photographic record of all living Nobel laureates. In this handsome coffee-table book, photographer Peter Badge captures the likeness of every living Nobel laureate in a lasting black-and-white image -- more than 300 striking portraits in all. Brief biographical sketches accompanying the large-scale photographs pay homage to each laureate's singular contribution to science, literature or world peace. Bringing readers face-to-face with Nelson Mandela, Jimmy Carter, the Dalai Lama, James Watson, Gabriel García Márquez, Toni Morrison, Rita Levi-Montalcini, Linda Buck, and Paul Samuelson among many others, NOBELS offers an intimate and compelling look at well-known honorees as well as lesser-known recipients. A fascinating word/image tableau.

Hydrogen doped thin film diamond. Properties and application for electronic devices

International Nuclear Information System (INIS)

Looi, H.J.

2000-01-01

The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

Nanoporous metal film: An energy-dependent transmission device for electron waves

International Nuclear Information System (INIS)

Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

2011-01-01

We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

Learning Analytics and Digital Badges: Potential Impact on Student Retention in Higher Education

Science.gov (United States)

Mah, Dana-Kristin

2016-01-01

Learning analytics and digital badges are emerging research fields in educational science. They both show promise for enhancing student retention in higher education, where withdrawals prior to degree completion remain at about 30% in Organisation for Economic Cooperation and Development member countries. This integrative review provides an…

Front and backside processed thin film electronic devices

Science.gov (United States)

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Perceptions and Uses of Digital Badges for Professional Learning Development in Higher Education

Science.gov (United States)

Dyjur, Patti; Lindstrom, Gabrielle

2017-01-01

Few instructors in higher education have completed a formal teaching program and, therefore, rely on informal professional development opportunities to enhance their teaching practice. Micro-credentialing in the form of digital badges is one way in which instructors can document their non-credit learning and accomplishments. This mixed methods…

Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

DEFF Research Database (Denmark)

Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

2012-01-01

We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric...... elements. We show experimental results from two types PZT/PZT harvesting devices, one where the Pb(ZrxTi1−x)O3 (PZT) thick films are high pressure treated during the fabrication and the other where the treatment is omitted. We find that with the high pressure treatment prior to PZT sintering, the films...

Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

Energy Technology Data Exchange (ETDEWEB)

Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2017-06-15

Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Science.gov (United States)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

CERN Document Server

Okuyama, Masanori

2005-01-01

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

Electronic Properties and Device Applications of van-der-Waals Thin Films

Science.gov (United States)

Renteria, Jacqueline de Dios

Successful exfoliation of graphene and discoveries of its unique electrical and thermal properties have motivated searches for other quasi two-dimensional (2D) materials with interesting properties. The layered van der Waals materials can be cleaved mechanically or exfoliated chemically by breaking the relatively weak bonding between the layers. In this dissertation research I addressed a special group of inorganic van der Waals materials -- layered transition metal dichalcogenides (MX2, where M=Mo, W, Nb, Ta or Ti and X=S, Se or Te). The focus of the investigation was electronic properties of thin films of TaSe2 and MoS2 and their device applications. In the first part of the dissertation, I describe the fabrication and performance of all-metallic three-terminal devices with the TaSe2 thin-film conducting channel. The layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. It was established that devices with nanometer-scale thickness channels exhibited strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. It was found that the drain-source current in thin-film 2H-TaSe2--Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. In the second part of the dissertation, I describe the fabrication, electrical testing and measurements of the low-frequency 1/f noise in three-terminal devices with the MoS2 thin-film channel (f is the frequency). Analysis of the experimental data allowed us to distinguish channel and contact noise contributions for both as fabricated and aged devices. The noise characteristics of MoS 2--Ti/Au devices are in agreement with the McWhorter model description. The latter is contrary to what is observed in

Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Macedo, Andreia G. [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Grova, Isabel R.; Ackcelrud, Leni [Laboratorio de Polimeros Paulo Scarpa, Departamento de Quimica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Reis, Francoise T.; Sartorelli, Maria L. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Roman, Lucimara S., E-mail: lsroman@fisica.ufpr.br [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil)

2012-05-01

In this work, porous ordered TiO{sub 2} films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

International Nuclear Information System (INIS)

Macedo, Andreia G.; Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S.; Grova, Isabel R.; Ackcelrud, Leni; Reis, Françoise T.; Sartorelli, Maria L.; Roman, Lucimara S.

2012-01-01

In this work, porous ordered TiO 2 films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems

NARCIS (Netherlands)

Klee, M.; Beelen, D.; Keurl, W.; Kiewitt, R.; Kumar, B.; Mauczok, R.; Reimann, K.; Renders, Ch.; Roest, A.; Roozeboom, F.; Steeneken, P.G.; Tiggelman, M.P.J.; Vanhelmont, F.; Wunnicke, O.; Lok, P.; Neumann, K.; Fraser, J.; Schmitz, G.

2007-01-01

Dielectric, ferroelectric and piezoelectric thin films are getting more and more attention for next generation mobile communication and medical systems. Thin film technologies based on dielectric, ferroelectric and piezoelectric thin films enable System-in-Package (SiP) devices, resulting in optimal

Improving light harvesting in polymer photodetector devices through nanoindented metal mask films

NARCIS (Netherlands)

Macedo, A. G.; Zanetti, F.; Mikowski, A.; Hummelen, J. C.; Lepienski, C. M.; da Luz, M. G. E.; Roman, L. S.

2008-01-01

To enhance light harvesting in organic photovoltaic devices, we propose the incorporation of a metal (aluminum) mask film in the system's usual layout. We fabricate devices in a sandwich geometry, where the mask (nanoindented with a periodic array of holes of sizes d and spacing s) is added between

On-line display used with cathode ray tube film measuring device

International Nuclear Information System (INIS)

Fortney, L.R.; Robertson, W.J.

1981-01-01

An improved display has been developed for use on our computer controlled measuring device (RIPPLE). The device features a television image of the film and a digital presentation on the same X, Y display. The television image is formed using a modified left and right raster scan which can cover 50% more area in the same time as the traditional raster

A scoping review towards the conceptualization of a digital Open Badges ecosystem in South Africa

CSIR Research Space (South Africa)

Motheeram, Preia

2016-11-01

Full Text Available relevant and rewarding pathways for learners. Open Badges can provide the infrastructure to facilitate this recognition of skills and achievements. In the absence of specific skills accreditation for informal skills and small scale competency development...

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

Science.gov (United States)

Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

2013-11-08

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

Evaluating and improving the performance of thin film force sensors within body and device interfaces.

Science.gov (United States)

Likitlersuang, Jirapat; Leineweber, Matthew J; Andrysek, Jan

2017-10-01

Thin film force sensors are commonly used within biomechanical systems, and at the interface of the human body and medical and non-medical devices. However, limited information is available about their performance in such applications. The aims of this study were to evaluate and determine ways to improve the performance of thin film (FlexiForce) sensors at the body/device interface. Using a custom apparatus designed to load the sensors under simulated body/device conditions, two aspects were explored relating to sensor calibration and application. The findings revealed accuracy errors of 23.3±17.6% for force measurements at the body/device interface with conventional techniques of sensor calibration and application. Applying a thin rigid disc between the sensor and human body and calibrating the sensor using compliant surfaces was found to substantially reduce measurement errors to 2.9±2.0%. The use of alternative calibration and application procedures is recommended to gain acceptable measurement performance from thin film force sensors in body/device applications. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

Radiation monitoring at Pakistan research reactor

International Nuclear Information System (INIS)

Ali, A.

1984-05-01

Area radiation monitoring is accomplished by using Tracer Lab. radiation monitor. Personnel monitoring is carried out using film badges, TLDs (Thermoluminescent Dosimeters) and pocket dosimeters. For the evaluation of monthly accumulated doses of radiation workers film badges/TLDs and for instantaneous/short term dose measurement in higher radiation zones pocket dosimeters are used in addition to film badge/TLD. Environmental monitoring is necessary to check the PARR operation effect on background radiation level in the vicinity of PINSTECH. (A.B.). 4 refs

Freestanding, heat resistant microporous film for use in energy storage devices

Science.gov (United States)

Pekala, Richard W.; Cherukupalli, Srinivas; Waterhouse, Robert R.

2018-02-20

Preferred embodiments of a freestanding, heat resistant microporous polymer film (10) constructed for use in an energy storage device (70, 100) implements one or more of the following approaches to exhibit excellent high temperature mechanical and dimensional stability: incorporation into a porous polyolefin film of sufficiently high loading levels of inorganic or ceramic filler material (16) to maintain porosity (18) and achieve low thermal shrinkage; use of crosslinkable polyethylene to contribute to crosslinking the polymer matrix (14) in a highly inorganic material-filled polyolefin film; and heat treating or annealing of biaxially oriented, highly inorganic material-filled polyolefin film above the melting point temperature of the polymer matrix to reduce residual stress while maintaining high porosity. The freestanding, heat resistant microporous polymer film embodiments exhibit extremely low resistance, as evidenced by MacMullin numbers of less than 4.5.

Chlorohydrins of bisphenol A diglycidyl ether (BADGE) and of bisphenol F diglycidyl ether (BFDGE) in canned foods and ready-to-drink coffees from the Japanese market.

Science.gov (United States)

Uematsu, Y; Hirata, K; Suzuki, K; Iida, K; Saito, K

2001-02-01

BADGE.2HCl and BFDGE.2HCl were determined in 28 samples of ready-to-drink canned coffee and 18 samples of canned vegetables (10 corn, 5 tomatoes and 3 others), all from the Japanese market. HPLC was used as the principal analytical method and GC-MS for confirmation of relevant LC fractions. BADGE.2HCl was found to be present in one canned coffee and five samples of corn, BFDGE.2HCl in four samples of canned tomatoes and in one canned corn. No sample was found which exceeded the 1 mg/kg limit of the EU for the BADGE chlorohydrins. However the highest concentration was found for the sum of BFDGE.2HCl anti BFDGE.HCl.H2O at a level of 1.5 mg/kg. A Beilstein test confirmed that all cans containing foods contaminated with BADGE.2HCl or BFDGE.2HCl had at lest one part coated with a PVC organosol.

Fabrication and study of sol-gel ZnO films for use in Si-based heterojunction photovoltaic devices

Directory of Open Access Journals (Sweden)

Daniya Mukhamedshina

2017-12-01

Full Text Available This paper considers the use of zinc oxide thin films prepared via the sol-gel route as an n-type layer in heterojunction ZnO/Si solar cells. The ZnO films were prepared via a simple spin-coating technique using zinc acetate dihydrate as a zinc precursor, isopropanol as a solvent and monoethanolamine as a stabilizing agent. Optical, structural and morphological properties of ZnO were investigated for thin films grown from sol-gel solutions with different concentrations both on glass and silicon substrates. As such, a distribution of crystallite sizes and surface topology parameters corresponding to various zinc acetate dihydrate concentrations were obtained to elucidate optimal film deposition conditions. Correlation between thin film morphology and structural characteristics of ZnO thin films was made based on atomic-force microscopy studies. Finally, our results on fabrication, characterization and simulation of ZnO/Si heterojunctions for use as photovoltaic devices are presented. Although noticeable rectifying and photovoltaic properties were observed for Al/Si/ZnO/Ti/Au devices, there appears to exist a considerable room for device improvement with simulation studies suggesting that efficiencies of the order of 24% may be obtained for devices with optimal silicon wafer passivation, i.e. with lifetimes of the order of 1000 μs.

Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

DEFF Research Database (Denmark)

Hansen, Christian Rein; Sørensen, Thomas Just; Glyvradal, Magni

2009-01-01

By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum....... By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers...

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Directory of Open Access Journals (Sweden)

Mehmet Cengiz Onbasli

2013-11-01

Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

CuPc/C60 heterojunction thin film optoelectronic devices

International Nuclear Information System (INIS)

Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

2010-01-01

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

Environmental Science and Engineering Merit Badges: An Exploratory Case Study of a Non-Formal Science Education Program and the U.S. Scientific and Engineering Practices

Science.gov (United States)

Vick, Matthew E.; Garvey, Michael P.

2016-01-01

The Boy Scouts of America's Environmental Science and Engineering merit badges are two of their over 120 merit badges offered as a part of a non-formal educational program to U.S. boys. The Scientific and Engineering Practices of the U.S. Next Generation Science Standards provide a vision of science education that includes integrating eight…

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.

2010-08-11

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

Production of Inorganic Thin Scintillating Films for Ion Beam Monitoring Devices

CERN Document Server

Re, Maurizio; Cosentino, Luigi; Cuttone, Giacomo; Finocchiaro, Paolo; Hermanne, Alex; Lojacono, Pietro A; Ma, YingJun; Thienpont, Hugo; Van Erps, Jurgen; Vervaeke, Michael; Volckaerts, Bart; Vynck, Pedro

2005-01-01

In this work we present the development of beam monitoring devices consisting of thin CsI(Tl) films deposited on Aluminium support layers. The light emitted by the scintillating layer during the beam irradiation is measured by a CCD-camera. In a first prototype a thin Aluminium support layer of 6 micron allows the ion beam to easily pass through without significant energy loss and scattering effects. Therefore it turns out to be a non-destructive monitoring device to characterize on-line beam shape and beam position without interfering with the rest of the irradiation process. A second device consists of an Aluminium support layer which is thick enough to completely stop the impinging ions allowing to monitor at the same time the beam profile and the beam current intensity. Some samples have been coated by a 100 Å protective layer to prevent the film damage by atmosphere exposition. In this contribution we present our experimental results obtained by irradiating the samples with proton beams at 8.3 and 62 Me...

The relationship of over density to overexposure each film/screen systems in chest radiography

Energy Technology Data Exchange (ETDEWEB)

Kim, Jung Min; Huo Joon [Korea University, Seoul (Korea, Republic of); Taro, Hayash; Yuji, Ishida; Tatsuya, Sakurai [The Chemotherapeutic Istitute Hospital, Tokyo (Japan)

1999-06-01

This study is to calculate the exposed radiation dose using Bit method, NDD calculation method and monogram method without dosimeter. In addition,we can calculate the radiation dose from x-ray film density as a film badge. The authors examined the entrance skin dose from 2 {approx} 3 intercostal chest x-ray film density. We also studied the relationship between film density and equivalent dose in the each screen film system under the different radiation quality and the poor geometry condition of grid ratio. As results, we established the deductive method to define the entrance skin dose from chest x-ray film density. The error range was found in the range -13 percent {approx} +17 percent for between deductive entrance skin dose and the 2 {approx} 3 inter coastal chest x-ray film density to actual detective radiation dose with dosimeter. (author)

Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

Directory of Open Access Journals (Sweden)

Yuhang SUN

2015-08-01

Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

Combining the Converse Humidity/Resistance Response Behaviors of RGO Films for Flexible Logic Devices

KAUST Repository

Tai, Yanlong

2017-03-23

Carbon nanomaterials have excellent humidity sensing performance. Here, we demonstrate that reduced-graphene-oxide- (rGO) based conductive films with different thermal reduction times have gradient and invertible humidity/electrical resistance responses: rGO films (< 11 h, negative response, regarded as a signal of “0”), rGO films (around 11-13 h, balance point) and rGO films (> 13 h, negative response, regarded as a signal of “1”). We propose a new mechanism that describes a “scale”-like model for rGO films to explain these behaviors based on contributions from Ohm-contact resistance and capacitive reactance at interplate junctions, and intrinsic resistances of the nanoplates, respectively. This mechanism is accordingly validated via a series of experiments and electrical impedance spectroscopies, which complement more classical models based on proton conductivity. To explore the practical applications of the converse humidity/resistance responses, three simple flexible logic devices were developed, i) a rGO pattern for humidity-insensitive conductive film, which has the potential to greatly improve the stability of carbon-based electrical device to humidity; ii) a Janus pattern of rGO films for gesture recognition, which is very useful to human/machine interactions; iii) a sandwich pattern of rGO films for 3-dimensional (3D) noncontact sensing, which will be complementary to existing 3D touch technique.

Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

International Nuclear Information System (INIS)

Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

2015-01-01

We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

Copper Antimony Chalcogenide Thin Film PV Device Development

Energy Technology Data Exchange (ETDEWEB)

Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

2015-06-14

Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

Electrochromics for smart windows: Oxide-based thin films and devices

Energy Technology Data Exchange (ETDEWEB)

Granqvist, Claes G.

2014-08-01

Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

Electrochromics for smart windows: Oxide-based thin films and devices

International Nuclear Information System (INIS)

Granqvist, Claes G.

2014-01-01

Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

Radiation dose measurements of the insertion devices using radiachromic film dosimeters

International Nuclear Information System (INIS)

Alderman, J.; Semones, E.; Job, P. K.

2004-01-01

The Advanced Photon Source (APS) uses Nd-Fe-B permanent magnets in the insertion devices to produce x-rays for scientific research [1,2]. Earlier investigations have exhibited varying degrees of demagnetization of these magnets [3] due to irradiation from electron beams [4,5,6], 60 Co γ-rays [5], and high-energy neutrons [7,8]. Radiation-induced demagnetization has been observed in the APS insertion devices [9] and was first measured in December of 2001. Partial demagnetization has also been observed in insertion devices at the European Synchrotron Radiation Facility (ESRF) [4,6], where Nd-Fe-B permanent magnets are also used. Growing concern for the lifetime of APS insertion devices, as well as the permanent magnets that will be used in next-generation, high-power light sources, like the FEL [10,11], resulted from the partial demagnetization observations made at both facilities. This concern in relation to radiation-induced demagnetization spurred a long-term project to measure and analyze the absorbed doses received by the APS insertion devices. The project required a reliable photon high-dose dosimetry technique capable of measuring absorbed doses greater than 10 6 rad, which was not readily available at the APS. Through a collaboration with the National Institute of Standards and Technology (NIST), one such technique using radiachromic films was considered, tested, and calibrated at the APS. This consequently led to the implementation of radiachromic film dosimetry for measuring the absorbed doses received by the insertion devices for each of the APS runs

Carrying an anti-nuclear-power badge in the teaching profession. BVerwG, decision of January 25, 1990. Tragen einer Anti-Atomkraft-Plakette im Schuldienst. Urteil des BVerwG vom 25. 1. 1990

Energy Technology Data Exchange (ETDEWEB)

Anon,

1990-06-15

The carrying of an anti-nuclear-power badge by a teacher during school hours violates the order to practice reticence in political activities. At the beginning of 1977 some teachers, the plaintiff as well, carried anti-nuclear-power badges, i.e. a round badge with a stylized red sun on a yellow background with the inscription 'Nuclear power - No, thank you'. Following a general direction by the educational authorities, the headmistress forbade plaintiff on 4.11.77 to visibly carry this badge during lessons. This protest having been without success, action was brought with partial success at the Administrative and Higher Administrative Court. The Federal Administrative Court dismissed the case. (orig./HSCH).

Flexible barrier film, method of forming same, and organic electronic device including same

Science.gov (United States)

Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

2013-03-26

A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

Summary of the recent conference on thin-film neutron optical devices

International Nuclear Information System (INIS)

Majkrzak, C.F.

1989-01-01

The proceedings of the conference of the International Society for Optical Engineering on Thin-Film Neutron Optical Devices: Mirrors, Supermirrors, Multilayer Monochromators, Polarizers and Beam Guides, which was held in San Diego, California in August, 1988, are summarized here. 2 refs

Routine monitoring of eye dose; and reply

Energy Technology Data Exchange (ETDEWEB)

Palmer, K; Jeans, S P; Faulkner, K; Bardsley, R A; Love, H G

1985-12-01

This letter briefly reports the assessment at Papworth Hospital of the feasibility of monitoring eye doses of staff using a film badge worn on the shoulder in addition to the badge worn under the lead apron. For three consecutive months hand and eye (forehead) dose were monitored using TLDs, while shoulder and body dose, recorded under the lead apron, were measured with film badges. For the four doctors monitored, (two radiologists and two cardiologists) the shoulder badge somewhat overestimated the eye dose. In the case of nurses, the dose recorded by the shoulder badge was of a similar order to the TLD-recorded eye dose. The reply from the Christie Hospital at Manchester comments on the use of the shoulder badge and contends that the use of forehead dosemeters to measure eye dose is to be preferred whenever possible.

The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

Science.gov (United States)

Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

2010-09-01

We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

The interpretability of doctor identification badges in UK hospitals: a survey of nurses and patients.

Science.gov (United States)

Hickerton, Bethan C; Fitzgerald, Daniel John; Perry, Elizabeth; De Bolla, Alan R

2014-07-01

Hospital badges have multiple important purposes, but their essential role remains the clear identification of the bearer, including their professional status. The modernisation of medical careers in the National Health Service has changed terminology dramatically, resulting in a plethora of new job titles emerging among both doctors and nurses. To determine whether the new or old terminology allowed clearer identification of medical doctors by patients and nurses. We replicated 11 identification badges used in the Royal Cornwall Hospital and Wrexham Maelor Hospital, both current and before the introduction of new medical training terminology. Data were collected from 114 patients and 67 nurses, by asking them to (1) identify which name badges represented doctors and (2) rank them in order of seniority. Only 11% of patients and 60% of nurses identified a 'Foundation Year 1 Trainee' as a qualified medical doctor. Indeed, only 'General Practice Vocational Trainee' and 'Consultant' were both readily identifiable as qualified doctors to both patients and nurses. Ranking was also a problem, with only 19% of patients and 45% of nurses able to correctly grade medical doctors using the current terminology. The old terminology allowed more accurate identification by nurses, with over 80% successfully ranking and marking the title appropriately. Current terminology is a source of confusion to both patients and members of the immediate medical care team, with nurses unable to correctly identify medical doctors. Our study indicates that a review of terminology is necessary to ensure patients, and staff, are able to communicate effectively. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Evaluation algorithm for Hp (10), Hp (0.07) and response matrix in mixed fields of 137Cs+90Sr/90Y for badge TLD without use of its commercial holder

International Nuclear Information System (INIS)

Alvarez R, Jose T.; Tovar M, Victor M.; Castaneda P, Mario; Padilla, Ismael

2008-01-01

American standards HPS N 13.11 (1993, 2001) set up performance category tests for deep and shallow personal equivalent dose evaluated by dosimetry processors. These standards establish the parameters bias B, standard deviation S and tolerance level L, whose values indicate the deviations from the conventionally true value for the equivalent dose. On the other hand, for a right evaluation of the equivalent dose, all personal dosimetry systems have four basic components: badge, holder, reading protocol and dose evaluation algorithm. However, in Nuclear Plant Laguna Verde NPP dosimetry laboratory uses the badges Panasonic 802 A without Panasonic UD874AT holder, and instead employs a polyethylene holder bag to protect the badge from misuse. This situation disables the manufacturer algorithm designed for the combination: badge + holder. Therefore, the purpose of this work is to design a personal equivalent dose algorithm for this badge + bag, such this corrected algorithm let fulfill the HPS N 13.11 (1993) categories II, IV, V and VII. The algorithm starts from the readings of the elements: E1, E2, E3 and E4, only corrected by their element correction factor ECF. Additionally, we characterize the badge + bag by means of the response function for: 137 Cs, 85 Kr and 90 Sr/ 90 Y radiation fields. Finally, for validation of the algorithm one verifies that parameters B, S and L accomplish with the limits indicated by the standard. (author)

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

Science.gov (United States)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Characterization of lipid films by an angle-interrogation surface plasmon resonance imaging device.

Science.gov (United States)

Liu, Linlin; Wang, Qiong; Yang, Zhong; Wang, Wangang; Hu, Ning; Luo, Hongyan; Liao, Yanjian; Zheng, Xiaolin; Yang, Jun

2015-04-01

Surface topographies of lipid films have an important significance in the analysis of the preparation of giant unilamellar vesicles (GUVs). In order to achieve accurately high-throughput and rapidly analysis of surface topographies of lipid films, a homemade SPR imaging device is constructed based on the classical Kretschmann configuration and an angle interrogation manner. A mathematical model is developed to accurately describe the shift including the light path in different conditions and the change of the illumination point on the CCD camera, and thus a SPR curve for each sampling point can also be achieved, based on this calculation method. The experiment results show that the topographies of lipid films formed in distinct experimental conditions can be accurately characterized, and the measuring resolution of the thickness lipid film may reach 0.05 nm. Compared with existing SPRi devices, which realize detection by monitoring the change of the reflective-light intensity, this new SPRi system can achieve the change of the resonance angle on the entire sensing surface. Thus, it has higher detection accuracy as the traditional angle-interrogation SPR sensor, with much wider detectable range of refractive index. Copyright © 2015 Elsevier B.V. All rights reserved.

Electroluminescent efficiency of alternating current thick film devices using ZnS:Cu,Cl phosphor

International Nuclear Information System (INIS)

Sharma, Gaytri; Han, Sang Do; Kim, Jung Duk; Khatkar, Satyender P.; Rhee, Young Woo

2006-01-01

ZnS:Cu,Cl phosphor is prepared with the help of low intensity milling of the precursor material in two step firing process. The synthesized phosphor is used for the preparation of alternating current thick film electroluminescent (ACTFEL) devices with screen-printing method. The commission international de l'Eclairge (CIE) color co-ordinates of the ACTFEL devices prepared by these phosphor layers shows a shift from bluish-green to green region with the change in the amount of Cu in the phosphor. The various parameters to improve the efficiency and luminance of the devices have also been investigated. The brightness of the ac thick film EL device depends on the particle size of the phosphor, crystallinity, amount of binding material and applied voltage. The EL device fabricated with phosphor having average particle size of 25 μm shows maximum luminescence, when 60% phosphor concentration is used with respect to binding material. EL intensity is also linearly dependent on frequency. It is due the increase of excitation chances of the host matrix or dopant ions with increasing frequency

Optimization of the energy response of radiographic films by Monte Carlo method

Energy Technology Data Exchange (ETDEWEB)

Moslehi, A. [Physics Department, Faculty of Science, Arak University, Shariati Square, Arak 38156 (Iran, Islamic Republic of); Hamidi, S., E-mail: s-hamidi@araku.ac.i [Physics Department, Faculty of Science, Arak University, Shariati Square, Arak 38156 (Iran, Islamic Republic of); Raisali, G. [Radiation Application Research School, Nuclear Science and Technology Research Institute, Atomic Energy Organization of Iran (Iran, Islamic Republic of); Gheshlaghi, F. [Film Badge Dosimetry Laboratory, National Radiation Protection Department, Iranian Nuclear Regulatory Authority, Atomic Energy Organization of Iran (Iran, Islamic Republic of)

2010-01-15

In the present work a simple model for calculation of the energy response of radiographic films was introduced. According to the model the energy response of a radiographic film is directly proportional to the optical density on the film and thus to the number of developed grains in the emulsion. The model was simulated by Monte Carlo method using MCNP code and the relative energy response of Kodak type 2 film under a few filters of A.E.R.E./R.P.S. film badge was calculated. The simulated responses were in agreement with the experimental data in the region of 30 keV-1.5 MeV. In the next stage a multi-element filter was simulated to optimize the energy response in the above energies. The energy response varied by 25% between 40 keV and 1.5 MeV. So the dose received by the film is equivalent to the desired true dose and there would be no need to the correction factors.

Optimization of the energy response of radiographic films by Monte Carlo method

International Nuclear Information System (INIS)

Moslehi, A.; Hamidi, S.; Raisali, G.; Gheshlaghi, F.

2010-01-01

In the present work a simple model for calculation of the energy response of radiographic films was introduced. According to the model the energy response of a radiographic film is directly proportional to the optical density on the film and thus to the number of developed grains in the emulsion. The model was simulated by Monte Carlo method using MCNP code and the relative energy response of Kodak type 2 film under a few filters of A.E.R.E./R.P.S. film badge was calculated. The simulated responses were in agreement with the experimental data in the region of 30 keV-1.5 MeV. In the next stage a multi-element filter was simulated to optimize the energy response in the above energies. The energy response varied by 25% between 40 keV and 1.5 MeV. So the dose received by the film is equivalent to the desired true dose and there would be no need to the correction factors.

Performance evaluation of vertical feed fully automated TLD badge reader using 0.8 and 0.4 mm teflon embedded CaSO4:Dy dosimeters

International Nuclear Information System (INIS)

Ratna, P.; More, Vinay; Kulkarni, M.S.

2012-01-01

The personnel monitoring of more than 80,000 radiation workers in India is at present carried out by semi-automated TLD badge Reader systems (TLDBR-7B) developed by Radiation Safety Systems Division, Bhabha Atomic Research Centre. More than 60 such reader systems are in use in all the personnel monitoring centers in the country. Radiation Safety Systems Division also developed the fully automated TLD badge reader based on a new TLD badge having built-in machine readable ID code (in the form of 16x3 hole pattern). This automated reader is designed with minimum of changes in the electronics and mechanical hardware in the semiautomatic version (TLDBR-7B) so that such semi-automatic readers can be easily upgraded to the fully automated versions by using the new TLD badge with ID code. The reader was capable of reading 50 TLD cards in 90 minutes. Based on the feedback from the users, a new model of frilly automated TLD badge Reader (model VEFFA-10) is designed which is an improved version of the previously reported fully Automated TLD badge reader. This VEFFA-10 PC based Reader incorporates vertical loading of TLD bards having machine readable ID code. In this new reader, a vertical rack, which can hold 100 such cards, is mounted from the right side of the reader system. The TLD card falls into the channel by gravity from where it is taken to the reading position by rack and pinion method. After the readout, the TLD card is dropped in a eject tray. The reader employs hot N 2 gas heating method and the gas flow is controlled by a specially designed digital gas flow meter on the front panel of the reader system. The system design is very compact and simple and card stuck up problem is totally eliminated in the reader system. The reader has a number of self-diagnostic features to ensure a high degree of reliability. This paper reports the performance evaluation of the Reader using 0.4 mm thick Teflon embedded CaSO 4 :Dy TLD cards instead of 0.8 mm cards

A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

KAUST Repository

Tai, Yanlong

2017-08-30

Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film\\'s structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

Science.gov (United States)

Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

2017-11-01

Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

Thermally evaporated thin films of SnS for application in solar cell devices

International Nuclear Information System (INIS)

Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

2009-01-01

SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

Remeasurement of early Harwell personnel film dosimeters

International Nuclear Information System (INIS)

Smith, J.W.; McGuinness, E.A.

1981-05-01

The A.E.A. epidemiological study depends for its radiation dose data on records of film badge doses which have been stored continuously since 1947. The records were originally kept to assist in the control of radiation hazard to the individual and for that purpose doses below the measurement threshold were unimportant. The epidemiological study could consider these doses to be either zero or equal to the measurement threshold, but both assumptions risk introducing a bias. Samples of old films worn in 1955 and 1960 were therefore remeasured using the present-day lower threshold of 0.005 rems to aid the choice of the most correct estimate. It was found that there had been little change in the blackening on the films or in the assessed radiation dose for 238 films above the original threshold of 0.05 rems, confirming that remeasurement was possible. The 2426 films previously recorded as ''<0.05 rems'' were found on remeasurement to give an average dose of 0.009 rems. A similar epidemiological study of radiation workers at Hanford took threshold doses as equal to zero and considered only positive measured doses. The errors possible with this approach are discussed. (author)

A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

KAUST Repository

Tai, Yanlong; Chen, Tao; Lubineau, Gilles

2017-01-01

Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film's structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

Synthesis of nanostructured multiphase Ti(C,N)/a-C films by a plasma focus device

International Nuclear Information System (INIS)

Ghareshabani, E.; Rawat, R.S.; Sobhanian, S.; Verma, R.; Karamat, S.; Pan, Z.Y.

2010-01-01

Nanostructured multiphase Ti(C,N)/a-C films were deposited using a 3.3 kJ pulsed plasma focus device onto silicon (1 0 0) substrates at room temperature. The plasma focus device, fitted with solid titanium anode instead of usual hollow copper anode, was operated with nitrogen and Ar/CH 4 as the filling gas. Films were deposited with different number of shots, at 80 mm from top of the anode and at zero angular position with respect to anode axis. X-ray diffraction results show the diffraction peaks related to different compounds such as TiC 2 , TiN, Ti 2 CN, Ti and TiC 0.62 confirming the deposition of multiphase titanium carbo-nitride composite films on silicon. X-ray photoelectron spectroscopy confirms the formation of Ti-C, C-N, Ti-N, Ti-O and C-C bonds in the films. Scanning electron microscopy reveals that the nanostructure grains are agglomerates of smaller nanoparticles about 10-20 nm in size. Raman studies verify the formation of multiphase Ti(C,N) and also of amorphous graphite in the films. The maximum microhardness value of the composite film is 14.8 ± 1.3 GPa for 30 shots.

Characterisation and application of WO3 films for electrochromic devices

Science.gov (United States)

Stapinski, Thomas; Marszalek, Konstanty; Swatowska, Barbara; Stanco, Agnieszka

2013-07-01

Electrochromic system is the one of the most popular devices using color memory effect under the influence of an applied voltage. The electrochromic system was produced based on the thin WO3 electrochromic films. Films were prepared by RF magnetron sputtering from tungsten targets in a reactive Ar+O2 gas atmosphere of various Ar/O2 ratios. The technological gas mixture pressure was 3 Pa and process temperature 30°C. Structural and optical properties of WO3 films were investigated for as-deposited and heat treated samples at temperature range from 350°C to 450°C in air. The material revealed the dependence of properties on preparation conditions and on post-deposition heat treatment. Main parameters of thin WO3 films: thickness d, refractive index n, extinction coefficient k and energy gap Eg were determined and optimized for application in electrochromic system. The main components of the system were glass plate with transparent conducting oxides, electrolyte, and glass plate with transparent conducting oxides and WO3 layer. The optical properties of the system were investigated when a voltage was applied across it. The electrochromic cell revealed the controllable transmittance depended on the operation voltage.

Nonlinear surface impedance of YBCO thin films: Measurements, modeling, and effects in devices

International Nuclear Information System (INIS)

Oates, D.E.; Koren, G.; Polturak, E.

1995-01-01

High-T c thin films continue to be of interest for passive device applications at microwave frequencies, but nonlinear effects may limit the performance. To understand these effects we have measured the nonlinear effects may limit the performance. To understand these effects we have measured the nonlinear surface impedance Z s in a number of YBa 2 Cu 3 O 7-x thin films as a function of frequency from 1 to 18 GHz, rf surface magnetic field H rf to 1500 Oe, and temperature from 4 K to T c . The results at low H rf are shown to agree quantitatively with a modified coupled-grain model and at high H rf with hysteresis-loss calculations using the Bean critical-state model applied to a thin strip. The loss mechanisms are extrinsic properties resulting from defects in the films. We also report preliminary measurements of the nonlinear impedance of Josephson junctions, and the results are related to the models of nonlinear Z s . The implications of nonlinear Z s for devices are discussed using the example of a five-pole bandpass filter

Nanomechanical characterization of multilayered thin film structures for digital micromirror devices

International Nuclear Information System (INIS)

Wei Guohua; Bhushan, Bharat; Joshua Jacobs, S.

2004-01-01

The digital micromirror device (DMD), used for digital projection displays, comprises a surface-micromachined array of up to 2.07 million aluminum micromirrors (14 μm square and 15 μm pitch), which switch forward and backward thousands of times per second using electrostatic attraction. The nanomechanical properties of the thin-film structures used are important to the performance of the DMD. In this paper, the nanomechanical characterization of the single and multilayered thin film structures, which are of interest in DMDs, is carried out. The hardness, Young's modulus and scratch resistance of TiN/Si, SiO 2 /Si, Al alloy/Si, TiN/Al alloy/Si and SiO 2 /TiN/Al alloy/Si thin-film structures were measured using nanoindentation and nanoscratch techniques, respectively. The residual (internal) stresses developed during the thin film growth were estimated by measuring the radius of curvature of the sample before and after deposition. To better understand the nanomechanical properties of these thin film materials, the surface and interface analysis of the samples were conducted using X-ray photoelectron spectroscopy. The nanomechanical properties of these materials are analyzed and the impact of these properties on micromirror performance is discussed

Ultrathin TaOx film based photovoltaic device

International Nuclear Information System (INIS)

Tyagi, Pawan

2011-01-01

Application of the economical metal oxide thin-film photovoltaic devices is hindered by the poor energy efficiency. This paper investigates the photovoltaic effect with an ultrathin tantalum oxide (TaOx) tunnel barrier, formed by the plasma oxidation of a pre-deposited tantalum (Ta) film. These ∼ 3 nm TaOx tunnel barriers showed approximately 160 mV open circuit voltage and 3-5% energy efficiency, for varying light intensity. The ultrathin TaOx (∼ 3 nm) could absorb approximately 12% of the incident light radiation in 400-1000 nm wavelength range; this strong light absorbing capability was found to be associated with the dramatically large extinction coefficient. Spectroscopic ellipsometry revealed that the extinction coefficient of 3 nm TaOx was ∼ 0.2, two orders higher than that of tantalum penta oxide (Ta 2 O 5 ). Interestingly, refractive index of this 3 nm thick TaOx was comparable with that of stochiometeric Ta 2 O 5 . However, heating and prolonged high-intensity light exposure deteriorated the photovoltaic effect in TaOx junctions. This study provides the basis to explore the photovoltaic effect in a highly economical and easily processable ultrathin metal oxide tunnel barrier or analogous systems.

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

Science.gov (United States)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

Directory of Open Access Journals (Sweden)

Farzana Aktar Chowdhury

2015-10-01

Full Text Available This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP adorned graphene oxide (GO nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW−1. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Farzana Aktar [Experimental Physics Division, Atomic Energy Centre, 4, Kazi Nazrul Islam Avenue, Dhaka-1000 (Bangladesh); Hossain, Mohammad Abul [Department of Chemistry, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Mohiuddin, Tariq [Department of Physics, College of Science, Sultan Qaboos University, Muscat (Oman); Boby, Monny Akter [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Alam, Mohammad Sahabul, E-mail: msalam@ksu.edu.sa [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Department of Chemical Engineering, College of Engineering & King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

2015-10-15

This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

Science.gov (United States)

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Thin film-based optically variable security devices: From passive to active

Science.gov (United States)

Baloukas, Bill

the possibility of creating various surprising optical effects. Such a system is obviously more challenging to duplicate due to its complexity, but also adds a second level of authentication accessible to specialized personnel. By designing a metameric filter which matches either the bleached or colored state of an electrochromic device, I show that one can generate two hidden image effects: one which appears when the structure is tilted, and the other one which disappears when the electrochromic material is colored under an applied potential. In this specific study, I present an example of a filter that is metameric with the colored state of a tungsten-oxide-based Deb-type electrochromic device. A hybrid device such as presented in the previous study is clearly interesting from a prototype point of view. Unfortunately, having to design and fabricate two individual components would make such a security feature very expensive. Consequently, my goal was to combine both the color shift and electrochromic color change into a single structure. The following study thus demonstrates, that by designing and fabricating an interference filter based on dense and porous WO3, this goal can be achieved. Finally, a second method of fabricating electrochromic interference filters is proposed which results in a significant decrease in the total numbers of layers of the filters. Replacing the porous WO3 films by a WO 3/SiO2 composite allows for much lower refractive indices to be obtained thus resulting in a larger index contrast (0.61 versus 0.22 in the previous study). In this study, I first explore the physical and electrochromic properties of WO3/SiO2 mixtures. I then combine high and low index films in tandem configurations to observe the bleaching/ coloration dynamics. To account for the poor performance of the ITO|Composite|WO 3 film configuration, I also present an explanation based on the differences in electron diffusion coefficients of the films. I conclude this study with

The Effect of Badges on the Engagement of Students with Special Educational Needs: A Case Study

Science.gov (United States)

Sitra, Ourania; Katsigiannakis, Vangelis; Karagiannidis, Charalampos; Mavropoulou, Sofia

2017-01-01

This paper addresses the perceived benefits from gamification in the context of special education. It presents the findings of a study evaluating the effects of a specific gamification element (badges) on the engagement of five students with special learning needs, through online courses developed on the Moodle Learning Management System (LMS).…

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Phan, Duy-Thach; Chung, Gwiy-Sang

2011-01-01

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 deg. C, 600 deg. C, 800 deg. C, and 1000 deg. C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 deg. C is determined as optimal annealing temperature for SAW devices. At 400 deg. C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 deg. C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k 2 ) of ZnO film decrease from 3.8% at 600 deg. C to 1.49% at 1000 deg. C.

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

Fluorine-doped tin oxide surfaces modified by self-assembled alkanethiols for thin-film devices

Energy Technology Data Exchange (ETDEWEB)

Alves, A.C.T.; Gomes, D.J.C.; Silva, J.R.; Silva, G.B., E-mail: george@cpd.ufmt.br

2013-08-15

In this work, we have investigated self-assembled monolayers (SAMs) from alkanethiols on fluorine-doped tin oxide (FTO) surfaces, which were used as an anode for thin-film devices prepared from the conductive copolymer so-called sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET). The assembled monolayers were characterized by using wetting contact angle, atomic force microscopy, and electrical measurements. The results indicated that dodecanethiol molecules, CH{sub 3}(CH{sub 2}){sub 11}SH, were well assembled on the FTO surfaces. In addition, it was found similar values of wetting contact angle for dodecanethiol assembled on both FTO and Au surfaces. Concerning the thin-film device, current–voltage analysis revealed a hysteresis. This behavior was associated to a charge-trapping effect and also to structural changes of the SAMs. Finally, charge injection capability of tin oxide electrodes can be improved by using SAMs and then this approach can plays an important role in molecular-scale electronic devices.

Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

International Nuclear Information System (INIS)

Wang, Ke; Chen, Ruofei; Zhuang, Fengjiang; Chen, Chuanwen; Su, Shaojian; Xiang, Yang

2015-01-01

Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~ 40 nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diffraction measurement, and the dominated absorption band from the ordered structures was further confirmed by ultraviolet-visible spectroscopy. The current–voltage characteristics of the junctions formed using TIPS-Pentacene on n-type Si substrates show good rectifying behavior with rectification ratios over 100 at 1 V. In the heterojunctions, barrier heights of ~ 0.8 eV and ideality factors of ~ 2 were determined based on thermionic emission model. It shows that TIPS-Pentacene can work well with n-type Si to form Schottky-type rectifying devices. Capacitance–voltage measurement performed on the metal–insulator–semiconductor structure of TIPS-Pentacene on SiO 2 shows obvious effects of accumulation and depletion in TIPS-Pentacene with bias. The maximum width of the depletion layer in TIPS-Pentacene is estimated to be 9.4 nm. - Highlights: • Ordered 6,13-bis (triisopropylsilylethynyl) (TIPS)-Pentacene films are formed on substrates. • TIPS-Pentacene films can work with n-type Si as Schottky-type rectifying devices. • TIPS-Pentacene/SiO 2 show obvious effects of accumulation and depletion with bias

Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Ke, E-mail: K.Wang@hqu.edu.cn; Chen, Ruofei; Zhuang, Fengjiang; Chen, Chuanwen; Su, Shaojian; Xiang, Yang

2015-06-01

Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~ 40 nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diffraction measurement, and the dominated absorption band from the ordered structures was further confirmed by ultraviolet-visible spectroscopy. The current–voltage characteristics of the junctions formed using TIPS-Pentacene on n-type Si substrates show good rectifying behavior with rectification ratios over 100 at 1 V. In the heterojunctions, barrier heights of ~ 0.8 eV and ideality factors of ~ 2 were determined based on thermionic emission model. It shows that TIPS-Pentacene can work well with n-type Si to form Schottky-type rectifying devices. Capacitance–voltage measurement performed on the metal–insulator–semiconductor structure of TIPS-Pentacene on SiO{sub 2} shows obvious effects of accumulation and depletion in TIPS-Pentacene with bias. The maximum width of the depletion layer in TIPS-Pentacene is estimated to be 9.4 nm. - Highlights: • Ordered 6,13-bis (triisopropylsilylethynyl) (TIPS)-Pentacene films are formed on substrates. • TIPS-Pentacene films can work with n-type Si as Schottky-type rectifying devices. • TIPS-Pentacene/SiO{sub 2} show obvious effects of accumulation and depletion with bias.

Thin film photovoltaic devices with a minimally conductive buffer layer

Science.gov (United States)

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Guillen, C.; Herrero, J

2003-05-01

Both frontal and back electrical contacts have been developed onto polyimide sheets (Kapton KJ[reg]) as alternative substrates to the conventional glasses, for application in lightweight and flexible thin film photovoltaic devices. Transparent and conductive indium tin oxide (ITO) thin films have been deposited by r.f.-magnetron sputtering as the frontal electrical contact. On the other hand, Mo, Cr and Ni layers have been prepared by e-gun evaporation for the back electrical connections. ITO films deposited onto polyimide have shown similar optical transmittance and higher electrical conductivity than onto glass substrates. The transmittance decreases and the conductivity increases after heating at 400 sign C in vacuum atmosphere. Mo, Cr and Ni layers deposited onto polyimide showed similar structure and electrical conductivity than onto conventional glasses. The properties of Mo and Cr layers remained unchanged after heating at 400 sign C in selenium atmosphere.

Pupil's motivation in the 3. grades for required reading and The Reading Badge

OpenAIRE

Logar, Renata

2013-01-01

Reading is extremely important for pupils and their development. The pupil with reading habits riches his vocabulary and gaining knowledge. On the other hand the pupil through reading entry into the world of imagination and stories. Major role in motivating students to read have parents and teachers. In this graduation thesis I was interested in how third grade teachers motivate their pupils to read. In doing so, I was focused mainly to reading for required reading and The Reading Badge. ...

SSDL personel dosimetry system: migration from a client - server system into a web-based system

International Nuclear Information System (INIS)

Maizura Ibrahim; Rosnah Shariff; Ahmad Bazlie Abdul Kadir; John Konsoh Sangau; Mohd Amin Sharifuldin Salleh; Taiman Kadni; Noriah Mod Ali

2007-01-01

Personnel Dosimetry System has been used by the Secondary Standard Dosimetry Laboratory (SSDL), Nuclear Malaysia since ten years ago. The system is a computerized database system with a client-server concept. This system has been used by Film Badge Laboratory, SSDL to record details of clients, calculation of Film Badge dosage, management of radiation workers data's, generating of dosage report, retrieval of statistical reports regarding film badge usage for the purpose of reporting to monitoring bodies such as Atomic Energy Licensing Board (AELB), Ministry of Health and others. But, due to technical problems that frequently occurs, the system is going to be replaced by a newly developed web- based system called e-SSDL. This paper describe the problems that regularly occurs in the previous system, explains how the process of replacing the client-server system with a web-based system is done and the differences between the previous and current system. This paper will also present details architecture of the new system and the new process introduced in processing film badges. (Author)

Fabrication of 3D Microfluidic Devices by Thermal Bonding of Thin Poly(methyl methacrylate) Films

KAUST Repository

Perez, Paul

2012-07-01

The use of thin-film techniques for the fabrication of microfluidic devices has gained attention over the last decade, particularly for three-dimensional channel structures. The reasons for this include effective use of chip volume, mechanical flexibility, dead volume reduction, enhanced design capabilities, integration of passive elements, and scalability. Several fabrication techniques have been adapted for use on thin films: laser ablation and hot embossing are popular for channel fabrication, and lamination is widely used for channel enclosure. However, none of the previous studies have been able to achieve a strong bond that is reliable under moderate positive pressures. The present work aims to develop a thin-film process that provides design versatility, speed, channel profile homogeneity, and the reliability that others fail to achieve. The three building blocks of the proposed baseline were fifty-micron poly(methyl methacrylate) thin films as substrates, channel patterning by laser ablation, and device assembly by thermal-fusion bonding. Channel fabrication was characterized and tuned to produce the desired dimensions and surface roughness. Thermal bonding was performed using an adapted mechanical testing device and optimized to produce the maximum bonding strength without significant channel deformation. Bonding multilayered devices, incorporating conduction lines, and integrating various types of membranes as passive elements demonstrated the versatility of the process. Finally, this baseline was used to fabricate a droplet generator and a DNA detection chip based on micro-bead agglomeration. It was found that a combination of low laser power and scanning speed produced channel surfaces with better uniformity than those obtained with higher values. In addition, the implemented bonding technique provided the process with the most reliable bond strength reported, so far, for thin-film microfluidics. Overall, the present work proved to be versatile

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

Science.gov (United States)

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Fully transparent thin-film transistor devices based on SnO2 nanowires.

Science.gov (United States)

Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

2007-08-01

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

Electrochemical investigation of electrochromic devices based on NiO and WO3 films using different lithium salts electrolytes

International Nuclear Information System (INIS)

Wei, Youxiu; Chen, Mu; Liu, Weiming; Li, Lei; Yan, Yue

2017-01-01

Highlights: •ECDs based on NiO and WO 3 films using different electrolytes were fabricated. •Effect of different electrolytes on films and ECDs was investigated. •Applied voltage distribution on NiO and WO 3 electrodes in an ECD was studied. •Voltage distribution on films was unbalanced and associated with electrolyte. •Films have different impedance behavior in different states and electrolytes. -- Abstract: Electrochromic devices (ECDs) with different liquid electrolytes were fabricated using NiO film as counter electrode, WO 3 film as working electrode. The effect of liquid electrolytes containing different lithium salts (LiClO 4 , LiPF 6 , LiTFSI) on films and ECDs was investigated, such as transmittance change, charge density, memory effect and cyclic stability. Films or ECDs using LiPF 6 electrolyte have excellent electrochromic properties but low cyclic stability, compared with LiClO 4 and LiTFSI electrolytes. In order to deeply understand the effect of electrolyte on films and devices, the voltage distribution of films based on an analog cell and electrochemical impedance spectroscopy (EIS) were measured and analyzed in different lithium salts electrolytes. Results show that voltage distribution and EIS characteristics of films have obvious difference in liquid LiClO 4 , LiPF 6 and LiTFSI electrolytes. Voltage distribution on NiO and WO 3 films is unbalanced and the impedance of films in bleached and colored states is different in the same electrolyte.

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

International Nuclear Information System (INIS)

Park, Joon Seok; Maeng, Wan-Joo; Kim, Hyun-Suk; Park, Jin-Seong

2012-01-01

The present article is a review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First, an overview is provided on how electrical performance may be enhanced by the adoption of specific device structures and process schemes, the combination of various oxide semiconductor materials, and the appropriate selection of gate dielectrics and electrode metals in contact with the semiconductor. As metal oxide TFT devices are excellent candidates for switching or driving transistors in next generation active matrix liquid crystal displays (AMLCD) or active matrix organic light emitting diode (AMOLED) displays, the major parameters of interest in the electrical characteristics involve the field effect mobility (μ FE ), threshold voltage (V th ), and subthreshold swing (SS). A study of the stability of amorphous oxide TFT devices is presented next. Switching or driving transistors in AMLCD or AMOLED displays inevitably involves voltage bias or constant current stress upon prolonged operation, and in this regard many research groups have examined and proposed device degradation mechanisms under various stress conditions. The most recent studies involve stress experiments in the presence of visible light irradiating the semiconductor, and different degradation mechanisms have been proposed with respect to photon radiation. The last part of this review consists of a description of methods other than conventional vacuum deposition techniques regarding the formation of oxide semiconductor films, along with some potential application fields including flexible displays and information storage.

Thin aligned organic polymer films for liquid crystal devices

International Nuclear Information System (INIS)

Foster, Kathryn Ellen

1997-01-01

This project was designed to investigate the possibility of producing alignment layers for liquid crystal devices by cross-linking thin films containing anisotropic polymer bound chromophores via irradiation with polarised ultraviolet light. Photocross-linkable polymers find use in microelectronics, liquid crystal displays, printing and UV curable lacquers and inks; so there is an increasing incentive for the development of new varieties of photopolymers in general. The synthesis and characterisation of two new photopolymers that are suitable as potential alignment layers for liquid crystal devices are reported in this thesis. The first polymer contains the anthracene chromophore attached via a spacer unit to a methacrylate backbone and the second used a similarly attached aryl azide group. Copolymers of the new monomers with methyl methacrylate were investigated to establish reactivity ratios in order to understand composition drift during polymerisation. (author)

Quality assurance of the manual OSLD Badge based personnel monitoring system

International Nuclear Information System (INIS)

Kumar, Munish; Gaonkar, U.P.; Koul, D.K.; Datta, D.; Singh, S.K.; Rakesh, R.B.; Kulkarni, M.S.; Ratna, P.

2018-01-01

Optically stimulated luminescence (OSL) based technique is widely used for monitoring of radiation workers exposed to x, gamma and beta radiations. Features such as multiple readout, short processing time, better beta response, absence of infra red signal (no heating), flexibility in the dosimeter design using binders or substrates having low melting point are associated advantages. Presently α-Al 2 O 3 :C and BeO based dosimeters are popularly used for personnel monitoring applications worldwide. The present paper describe results of the external quality control check (QAC) tests performed for the present OSLD badge based personnel monitoring system. The results were analyzed as per ANSI criteria and Trumpet curve methods

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

International Nuclear Information System (INIS)

Tuğluoğlu, Nihat; Barış, Behzad; Gürel, Hatice; Karadeniz, Serdar; Yüksel, Ömer Faruk

2014-01-01

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U ) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

Energy Technology Data Exchange (ETDEWEB)

Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

2014-01-05

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

Design refinement of multilayer optical thin film devices with two optimization techniques

International Nuclear Information System (INIS)

Apparao, K.V.S.R.

1992-01-01

The design efficiency of two different optimization techniques of designing multilayer optical thin film devices is compared. Ten different devices of varying complexities are chosen as design examples for the comparison. The design refinement efficiency and the design parameter characteristics of all the sample designs obtained with the two techniques are compared. The results of the comparison demonstrate that the new method of design developed using damped least squares technique with indirect derivatives give superior and efficient designs compared to the method developed with direct derivatives. (author). 23 refs., 4 tabs., 14 figs

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Science.gov (United States)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

Complex composition film condensation in the sluice device of an electron microscope

International Nuclear Information System (INIS)

Kukuev, V.I.; Lesovoj, M.V.; Vlasov, D.A.; Malygin, M.V.; Domashevskaya, Eh.P.; Tomashpol'skij, Yu.Ya.

1994-01-01

Based on the sluice device of an electron microscope a system is developed for material laser evaporation and vapor condensation on a substrate, situated in the microscope specimen holder. Substrate heating by laser radiation to 100 deg C is used. The system is applied for investigating growth of high-temperature superconductor films

Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

Science.gov (United States)

Liu, Yang; Kim, Eunju; Han, Jeong In

2016-01-01

During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

UV dosimetry in Antarctica (Baia Terranova): analysis of data from polysulphone films and GUV 511 radiometer

Science.gov (United States)

Mariutti, Gianni F.; Bortolin, Emanuela; Polichetti, Alessandro; Anav, Andrea; Casale, Giuseppe R.; Di Menno, Massimo; Rafanelli, Claudio

2003-11-01

This paper shows the results of measurements carried out in November 2002 in the Italian Antarctic Base of Baia Terranova (74.07°S, 164.08°E) to test polysulphone film badges as possible UV personal dosimeters in such extreme environmental conditions. In the Italian Antarctic Base a multichannel radiometer GUV 511 (Biospherical Inc.) is routinely used by the Italian National Research Council (CNR) for UV irradiance at sea level. This instrument measures the intensity of the solar UV spectrum at four different wavelengths: 305, 320, 340, 380 nm, respectively. Data obtained from polysulphone badges exposed in the horizontal and the vertical configurations during diverse time lapses of the day, and from polysulphone badges worn by three volunteers of the base staff during several outdoors activities, have been compared with the irradiance data calculated from the measured values of GUV 511. A preliminary analysis of the whole data, also in the light of other recorded atmospheric and climatic parameters, shows a reasonable consistency. As also shown by previous measurements, carried out in June 2002 in the locality of Ny Alesund (Svalbard -- Artic Region), the calibration of the above mentioned personal dosimeters by means of another instrument operating in the same locality is a crucial step. Further work is required to demonstrate this approach is suitable for an acceptable evaluation of personal radiant exposures.

Computerized assessment of the measurement of individual doses

International Nuclear Information System (INIS)

Kiibus, A.

1981-06-01

The department for the measurements of individual doses makes regular dose controls by means of film badges for approximately 14000 individuals. The operation is facilitated by a Honeywell Bull Mini 6 Mod 43 computer. The computer language is COBOL applied to registering of in-data such as delivery of badges, film development, calibration, invoices, recording of individual doses and customers. The print-out consists of customers, badge codes, dosimeter lists, development specifications, dose statements, addresses, bills, dose statistics and the register of individuals. As a consequence of charges the activity is financially self-supporting. (G.B.)

Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

International Nuclear Information System (INIS)

Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

2015-01-01

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10 4 and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10 4  s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices

High-performance electrochromic device based on nanocellulose/polyaniline and nanocellulose/poly(3,4-ethylenedioxythiophene) composite thin films

Science.gov (United States)

Zhang, Sihang; Fu, Runfang; Du, Zoufei; Jiang, Mengjin; Zhou, Mi; Gu, Yingchun; Chen, Sheng

2017-07-01

With the development of nanotechnology, nanocomposite materials based on renewable resources are the focus of this research. Nanocellulose was prepared using sulfuric acid to swell cotton pulp, following with extensive ultrasonication. Nanocellulose/polyaniline (NC/PANI) and nanocellulose/poly(3,4-ethylenedioxythiophene) (NC/PEDOT) nanocomposites with core/shell structure were manufactured by in situ polymerization. The film-forming properties and electrochromic properties of PANI and PEDOT were significantly improved using the nanocellulose as matrix. NC/PANI and NC/PEDOT composite films were studied in single and dual electrochromic devices (ECDs). A viscous gel electrolyte (GE) was used in ECDs. The architectural design of single and dual device was ITO/NC-PANI/GE/ITO or ITO/NC-PEDOT/GE/ITO and ITO/NC-PANI/GE/NC-PEDOT/ITO, respectively. The dual ECD based on NC/PANI and NC/PEDOT composite films exhibited a higher color contrast (30.3%), shortest response time (1.5 s for bleaching and 1.9 s for coloring), largest coloration efficiency (241.6 C/cm2), and best cycling stability (over 150 cycles) compared with the single devices.

Thin Film Energy Storage Device with Spray‐Coated Sliver Paste Current Collector

Directory of Open Access Journals (Sweden)

Seong Man Yoon

2017-12-01

Full Text Available This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass‐manufacturable spray‐coating technology enables the fabrication of two different half‐cell electric double layer capacitors (EDLC with a spray‐coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half‐cell EDLC with the spray‐coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half‐cell EDLC with the spray‐coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from −0.5 V to 0.5 V, the spray‐coated thin film energy storage device exhibits a better performance.

Automatic film loader for X-ray spot film device

International Nuclear Information System (INIS)

1975-01-01

A light tight tunnel extends over the top of a diagnostic X-ray table. A film cassette is mounted for reciprocating in the tunnel between an X-ray exposure position and a position in which the cassette is unloaded or loaded with film automatically. Unexposed films are dispensed one at a time into the cassette from a feed magazine at one end of the tunnel. After exposure, the film is ejected from the cassette into a receiving magazine at the same end of the tunnel. (Auth.)

Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

Science.gov (United States)

Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

Effects of the Boy Scouts of America Personal Fitness Merit Badge on Cardio-Metabolic Risk, Health Related Fitness and Physical Activity in Adolescent Boys.

Science.gov (United States)

Maxwell, Justin; Burns, Ryan D; Brusseau, Timothy A

2017-01-01

A growing number of adolescents are more sedentary and have fewer formal opportunities to participate in physical activity. With the mounting evidence that sedentary time has a negative impact on cardiometabolic profiles, health related fitness and physical activity, there is a pressing need to find an affordable adolescent physical activity intervention. One possible intervention that has been overlooked in the past is Boy Scouts of America. There are nearly 900,000 adolescent boys who participate in Boy Scouts in the United States. The purpose of this research study was to evaluate the effect of the Personal Fitness merit badge system on physical activity, health-related fitness, and cardio-metabolic blood profiles in Boy Scouts 11-17 years of age. Participants were fourteen (N = 14) Boy Scouts from the Great Salt Lake Council of the Boy Scouts of America who earned their Personal Fitness merit badge. Classes were held in the Spring of 2016 where boys received the information needed to obtain the merit badge and data were collected. Results from the related-samples Wilcoxon signed rank test showed that the median of differences between VO 2 peak pre-test and post-test scores were statistically significant ( p = 0.004). However, it also showed that the differences between the Pre-MetS (metabolic syndrome) and Post-MetS scores (p = 0.917), average steps taken per day ( p = 0.317), and BMI ( p = 0.419) were not statistically significant. In conclusion, the merit badge program had a positive impact on cardiovascular endurance, suggesting this program has potential to improve cardiovascular fitness and should be considered for boys participating in Boy Scouts.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

Energy Technology Data Exchange (ETDEWEB)

Poullain, Gilles, E-mail: gilles.poullain@ensicaen.fr; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

2017-01-15

Tb{sub x}Dy{sub 1−x}Fe{sub 2}/Pt/Pb(Zr{sub x}, Ti{sub 1−x})O{sub 3} thin films were grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient α{sup Η}{sub ΜΕ} was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large α{sup Η}{sub ΜΕ} of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance. - Highlights: • Magnetoelectric device behaves as a voltage source. • A simple way to subtract eddy currents during the measurement, is proposed.

Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

Science.gov (United States)

Meng, Lei

Solar energy harvesting through photovoltaic conversion has gained great attention as a sustainable and environmentally friendly solution to meet the rapidly increasing global energy demand. Currently, the high cost of solar-cell technology limits its widespread use. This situation has generated considerable interest in developing alternative solar-cell technologies that reduce cost through the use of less expensive materials and processes. Perovskite solar cells provide a promising low-cost technology for harnessing this energy source. In Chapter two, a moisture-assist method is introduced and studied to facilitate grain growth of solution processed perovskite films. As an approach to achieve high-quality perovskite films, I anneal the precursor film in a humid environment (ambient air) to dramatically increase grain size, carrier mobility, and charge carrier lifetime, thus improving electrical and optical properties and enhancing photovoltaic performance. It is revealed that mild moisture has a positive effect on perovskite film formation, demonstrating perovskite solar cells with 17.1% power conversion efficiency. Later on, in Chapter four, an ultrathin flexible device delivering a PCE of 14.0% is introduced. The device is based on silver-mesh substrates exhibiting superior durability against mechanical bending. Due to their low energy of formation, organic lead iodide perovskites are also susceptible to degradation in moisture and air. The charge transport layer therefore plays a key role in protecting the perovskite photoactive layer from exposure to such environments, thus achieving highly stable perovskite-based photovoltaic cells. Although incorporating organic charge transport layers can provide high efficiencies and reduced hysteresis, concerns remain regarding device stability and the cost of fabrication. In this work, perovskite solar cells that have all solution-processed metal oxide charge transport layers were demonstrated. Stability has been

Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

Energy Technology Data Exchange (ETDEWEB)

Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

1999-09-30

ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

A novel optic bistable device with very low threshold intensity using photorefractive films

Science.gov (United States)

Wang, Sean X.; Sun, Yuankun; Trivedi, Sudhir B.; Li, Guifang

1994-08-01

Brimrose Corporation of America reports the successful completion of the SBIR Phase I research in low-threshold intensity optical bistable devices using photorefractive nonlinearity. A thin photorefractive film optical bistable device was proposed in the Phase I proposal. The feasibility of this device was theoretically investigated. The theoretical feasibility study formulates the materials requirements in such a kind of configuration for Phase II research. In addition, we have proposed and investigated another configuration of optical bistable devices that do not require advanced photorefractive materials, namely, the self-pumped phase conjugator. We have successfully demonstrated a low-threshold optical bistable operation in a KNSBN:CU crystal. To the best of our knowledge, the threshold of 650 mW/sq. cm is the lowest of its kind to be achieved so far.

In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

Science.gov (United States)

Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

2017-04-25

Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

Energy Technology Data Exchange (ETDEWEB)

Aïssa, B., E-mail: aissab@emt.inrs.ca [Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d' Or, Quebec J9P 1Y3 (Canada); Kroeger, J. [NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada); Haddad, T. [Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada); Rosei, F. [Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

2015-09-28

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

Development of alloy-film coated dispenser cathode for terahertz vacuum electron devices application

International Nuclear Information System (INIS)

Barik, R.K.; Bera, A.; Raju, R.S.; Tanwar, A.K.; Baek, I.K.; Min, S.H.; Kwon, O.J.; Sattorov, M.A.; Lee, K.W.; Park, G.-S.

2013-01-01

High power terahertz vacuum electron devices demand high current density and uniform emission dispenser cathode. It was found that the coating of noble metals e.g., Os, Ir, and Re on the surface of tungsten dispenser cathodes enhances the emission capabilities and uniformity. Hence metal coated cathode might be the best candidate for terahertz devices applications. In this study, ternary-alloy-film cathode (2Os:2Re:1 W) and Os coated cathode have been developed and the results are presented. The cathodes made out of this alloy coating showed 1.5 times higher emission and 0.02 eV emission uniformity as compared to those of simply Os coated cathodes which can be used in terahertz devices application.

Development of alloy-film coated dispenser cathode for terahertz vacuum electron devices application

Energy Technology Data Exchange (ETDEWEB)

Barik, R. K.; Bera, A. [School of Electrical Engineering and Computer Science, Seoul National University, Seoul (Korea, Republic of); Raju, R. S. [Central Electronics Engineering Research Institute (CEERI), Rajasthan (India); Tanwar, A. K.; Baek, I. K.; Min, S. H.; Kwon, O. J.; Sattorov, M. A. [Department of Physics and Astronomy, Center for THz-Bio Application Systems, and Seoul-Teracom Inc., Seoul National University, Seoul (Korea, Republic of); Lee, K. W. [LIG Nex1, Seoul (Korea, Republic of); Park, G.-S., E-mail: gunsik@snu.ac.kr [School of Electrical Engineering and Computer Science, Seoul National University, Seoul (Korea, Republic of); Department of Physics and Astronomy, Center for THz-Bio Application Systems, and Seoul-Teracom Inc., Seoul National University, Seoul (Korea, Republic of); Advanced Institute of Convergence Technology, Suwon-si, Gyeonggi-do (Korea, Republic of)

2013-07-01

High power terahertz vacuum electron devices demand high current density and uniform emission dispenser cathode. It was found that the coating of noble metals e.g., Os, Ir, and Re on the surface of tungsten dispenser cathodes enhances the emission capabilities and uniformity. Hence metal coated cathode might be the best candidate for terahertz devices applications. In this study, ternary-alloy-film cathode (2Os:2Re:1 W) and Os coated cathode have been developed and the results are presented. The cathodes made out of this alloy coating showed 1.5 times higher emission and 0.02 eV emission uniformity as compared to those of simply Os coated cathodes which can be used in terahertz devices application.

Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

Energy Technology Data Exchange (ETDEWEB)

Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

2016-12-30

Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

Effects of the Badge Mechanism on Self-Efficacy and Learning Performance in a Game-Based English Learning Environment

Science.gov (United States)

Yang, Jie Chi; Quadir, Benazir; Chen, Nian-Shing

2016-01-01

A growing number of studies have been conducted on digital game-based learning (DGBL). However, there has been a lack of attention paid to individuals' self-efficacy and learning performance in the implementation of DGBL. This study therefore investigated how the badge mechanism in DGBL enhanced users' self-efficacy in the subject domain of…

Situation of radiation exposure in medical personnel, (2)

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Minoru; Kumazaki, Hiroshi; Tsuchiya, Mitsuaki; Nakamura, Masamoto; Nonomura, Takuo [Tokyo Metropolitan Isotope Research Center (Japan)

1982-09-01

In connection with the radiation protection for medical personnel, the logarithmic normal distribution of their exposure doses has been examined, which is a prerequisite for the practice. The data were the doses measured by film badges from April, 1976, to March, 1981, for physicians, radiation technicians and nurses. The dose measurement by film badges was carried out monthly, 12 times a year; the values given were mrem/year. For the probability distribution of exposure doses, the following items were surveyed: comparison between three types of the profession and the kinds of film badges, i.e. for X-ray and ..gamma..-ray, the linearity of the logarithmic normal distribution for the types of medical institution, and comparison in the linearity between Japan and other countries. The fitting to linearity was found to be very good.

DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

Science.gov (United States)

Franklin, Aaron D

2015-08-14

For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

An international cooperation by using an all-encompassing passive radon monitor

International Nuclear Information System (INIS)

Tommasino, L.; Chen, J.; Falcomer, R.; Janik, M.; Kanda, R.; DeFelice, F.; Cardellini, F.; Trevisi, R.; Leonardi, F.; Magnoni, M.; Chiaberto, E.; Agnesod, G.; Ragani, M. Faure; Espinosa, G.; Golzarri, J.; Kozak, K.; Mazur, J.

2017-01-01

The recently developed radon film-badge makes it possible to measure radon indoors, in soil, in water and/or in aqueous media (e.g. mud). As a result of its wide response linearity, this monitor has been successfully used to measure radon in-water with concentrations from 10 to ∼10 000 Bq/L. By exploiting the unique characteristics of this badge, a mini-survey has been carried out by Health Canada in which radon in water was measured from 12 private wells, as well as in tap water originating from the Ottawa River. Due to the widespread interest of different laboratories in using these passive monitors, laboratories were provided with plastic films to construct their own badges by using in-house CR-39 detectors. Monitors were then irradiated by a known radon concentration at the National Institute of Radiation Metrology (ENEA) s radon chamber and sent back to each laboratory for processing and counting. Even though these laboratories have been using different etching- and counting procedures, the film-badge responses varied only within ∼12%. (authors)

Triboluminescent tamper-indicating device

Science.gov (United States)

Johnston, Roger G.; Garcia, Anthony R. E.

2002-01-01

A tamper-indicating device is described. The device has a transparent or translucent cylindrical body that includes triboluminescent material, and an outer opaque layer that prevents ambient light from entering. A chamber in the body holds an undeveloped piece of photographic film bearing an image. The device is assembled from two body members. One of the body members includes a recess for storing film and an optical assembly that can be adjusted to prevent light from passing through the assembly and exposing the film. To use the device with a hasp, the body members are positioned on opposite sides of a hasp, inserted through the hasp, and attached. The optical assembly is then manipulated to allow any light generated from the triboluminescent materials during a tampering activity that damages the device to reach the film and destroy the image on the film.

Enhanced performance of organic light-emitting devices by using electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film as the anode modification layer

Energy Technology Data Exchange (ETDEWEB)

Liu Xiaona [Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yan Jun [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Meng Lingchuan [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Sun Chenghua; Hu Xiujie; Chen Ping [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhou Shuyun, E-mail: zhou_shuyun@mail.ipc.ac.cn [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Teng Feng [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

2012-01-31

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films were prepared by electropolymerization on patterned indium tin oxide substrates in isopropanol solution. The thickness and doping level of the PEDOT:PSS films were controlled by adjusting the electropolymerization time and the concentration of poly(styrene sulfonate) acid, respectively. Organic light-emitting diodes were fabricated using the electropolymerized PEDOT:PSS film as the anode modification layer. The dependence of the performance on thickness of PEDOT:PSS films was investigated. It is shown that the performance of the device can be further enhanced when the thickness of PEDOT:PSS films reached an optimum condition. This method facilitates manufacturing procedures of conducting polymers films and may offer an economical route for producing organic electroluminescent devices.

Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

DEFF Research Database (Denmark)

Xu, R.; Lei, A.; Christiansen, T. L.

2011-01-01

We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material...

Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

1990-09-01

We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

Calibration of TLD badge to photons of energies above 6 MeV encountered in nuclear reactors

International Nuclear Information System (INIS)

Pradhan, A.S.; Bakshi, A.K.

1999-01-01

Response of CaSO 4 :Dy Teflon discs based TLD badge has been evaluated for radiation fields having photons of energy above 6 MeV, often encountered in nuclear power plants. Gamma ray response of the TLD disc under metal filter in the badge (used for evaluation of gamma ray doses) was found to increase by about 10% to photons above 6 MeV as compared to the response for reference calibration to 60 Co gamma rays. Response of discs under the open window and the plastic filter was found to be only 40-60% of that under metal filter. Thus, while measurement of whole body dose is not affected seriously, the estimation of beta dose in the mixed fields of high energy gamma rays and beta rays could be in serious error. In the above fields for situations having beta doses of about 1.65 times the gamma ray doses, the present use of dose evaluation will record beta dose as zero, a serious under estimation of beta ray doses. Study also provides an explanation to an anomalous situation where reading under window or plastic filter is much less than that under metal filter. These aspects of personal dosimetry need attention. (author)

Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

Science.gov (United States)

Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

2018-04-01

We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices

Energy Technology Data Exchange (ETDEWEB)

Roy, M.S. [Defence Lab., Jodhpur (India). Camouflage Div.; Sharma, G.D.; Gupta, S.K. [Department of Physics, J.N.V. University, Jodhpur (Raj.) (India)

1997-11-21

The charge generation and photovoltaic effects observed with thin films of TY in the form of sandwich structures, were analysed by J-V, C-V and photoaction spectra. These measurements were explained in terms of n-type semiconductivity of TY thin film and by the formation of a Schottky barrier with ITO while Ohmic contact with an Al or In electrode. The existence of thermionic emission over the ITO-TY barrier has been observed in low voltage region, whereas at high voltages, the process is dominant by the series resistance of TY layer. Various electrical parameters were calculated from the analysis of J-V and C-V characteristics of the devices and discussed in details. The diode quality factor is higher for Al/TY/ITO than In/TY/ITO device which can be attributed to the formation of thin layer of Al{sub 2}O{sub 3} between Al and TY. The photoaction spectra of the devices reveal that the fraction of light which is absorbed near the ITO-TY interface, to the depth of 180 A, is responsible for producing the charge carriers. The photovoltaic parameters were also calculated from the J-V characteristics of the devices, under illumination and described in detail. (orig.) 21 refs.

Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

Energy Technology Data Exchange (ETDEWEB)

Choi, Kyung Hyun; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Na, Kyoung-Hoan, E-mail: khna@dankook.ac.kr [College of Engineering, Dankook University, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

2015-10-15

This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm–200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, R{sub a}=2.59 nm) on indium–tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current–voltage hysteresis and well over 1 h retentivity, and R{sub OFF}/R{sub ON}≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

Science.gov (United States)

Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

2018-04-01

In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

Improving the Validity of Squeeze Film Air-Damping Model of MEMS Devices with Border Effect

Directory of Open Access Journals (Sweden)

Cheng Bai

2014-01-01

Full Text Available Evaluation of squeezed film air damping is critical in the design and control of dynamic MEMS devices. The published squeezed film air damping models are generally derived from the analytical solutions of Reynolds equation or its other modified forms under the supposition of trivial pressure boundary conditions on the peripheral borders. These treatments ignoring the border effect can not give faithful result for structure with smaller air venting gap or the double-gimbaled structure in which the inner frame and outer one affect the air venting. In this paper, we use Green’s function to solve the nonlinear Reynolds equation with inhomogeneous boundary conditions. For two typical normal motion cases of parallel plate, the analytical models of squeeze film damping force with border effect are established. The viscous and inertial losses with real values and image values acoustic impedance are all included in the model. These models reduced the time consumption while giving satisfactory result. Without multifield coupling analysis, the estimation of the dynamic behavior of MEMS device is also allowed, and the simulation of the system performance is more convenient.

Highly transparent and rollable PVA-co-PE nanofibers synergistically reinforced with epoxy film for flexible electronic devices.

Science.gov (United States)

Xiong, Bing; Zhong, Weibing; Zhu, Qing; Liu, Ke; Li, Mufang; Sun, Gang; Wang, Dong

2017-12-14

The development of electronics towards a more functions-integrated, flexible and stretchable direction requires mechanically flexible substrates with high thermal and dimensional stability and optical transparency. Herein, rolls of an optically transparent PVA-co-PE nanofibrous membrane/epoxy composite with synergistically enhanced thermal stability, very low CTE, and outstanding mechanical properties are reported. The nanoscale size, the unique inter-stack structure, and the strong interfacial interactions between the PVA-co-PE nanofibers and the epoxy contribute to the synergistic effects. Because of the match between the refractive index (RI) of the PVA-co-PE nanofibers and the epoxy matrix, the visible light transmittance of nanocomposite film could be as high as 85% and the composite film was still optically transparent with a nanofiber loading content of up to 61.7 wt%. The break strength and compliance matrix of the composite film with a high fiber loading of 61.7 wt% increased by 2.3 times of that of the neat epoxy film and exceeded 3000 m 2 N -1 , respectively. PVA-co-PE nanofibers have a very low CTE value (3.634 × 10 -6 K -1 ) and could be applicable as a reinforcement to reduce the thermal expansion of epoxy. Furthermore, we developed a flexible alternating current electroluminescent (ACEL) device based on the transparent composite film and the experimental results showed that the transparent composite film could serve as substrate for flexible electronic devices. In addition, their electrical and optical properties were evaluated.

Real-time monitoring of luminescent lifetime changes of PtOEP oxygen sensing film with LED/photodiode-based time-domain lifetime device.

Science.gov (United States)

Ji, Shaomin; Wu, Wanhua; Wu, Yubo; Zhao, Taiyang; Zhou, Fuke; Yang, Yubin; Zhang, Xin; Liang, Xiaofen; Wu, Wenting; Chi, Lina; Wang, Zhonggang; Zhao, Jianzhang

2009-05-01

A cost-effective LED/photodiode(PD)-based time-domain luminescent lifetime measuring device with rugged electronics and simplified algorithms was assembled and successfully used to characterize oxygen sensing films, by continuously monitoring phosphorescence lifetime changes of phosphorescent platinum octaethylporphyrin (PtOEP) in cardo poly(aryl ether ketone) polymer (IMPEK-C) vs. variation of the oxygen partial pressure in a gas mixture (O(2)/N(2)). The results determined by both phosphorescence lifetime and intensity monitoring were compared and the lifetime mode gave results which are in good agreement with the intensity mode. The lifetime-based linear Stern-Volmer plot indicates that the PtOEP molecules are nearly homogeneously distributed in the sensing film. The phosphorescent lifetime of the PtOEP film changes from 75 micros in neat N(2) to less than 2 micros in neat O(2). The sensing system (by combination of the PtOEP sensing film with the home-assembled lifetime device) gives a high lifetime-based O(2) sensing resolution, e.g. about 2 micros Torr(-1) for low O(2) concentration (below 3.5% O(2), V/V). This feasible lifetime device configuration is affordable to most sensor laboratories and the device may facilitate the study of O(2) sensing material with the continuous lifetime monitoring method.

Chemically fabricated LiFePO{sub 4} thin film electrode for transparent batteries and electrochromic devices

Energy Technology Data Exchange (ETDEWEB)

Béléké, Alexis B. [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Department of Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 rue University, Montréal, QC H3A 2B2 (Canada); Faure, Cyril [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Röder, Manuel [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Hovington, Pierre [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Posset, Uwe [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Guerfi, Abdelbast [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Zaghib, Karim, E-mail: zaghib.karim@ireq.ca [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada)

2016-12-15

Graphical abstract: Simplified diagram of the novel sol-gel approach of preparation of colorless and transparent LiFePO{sub 4} thin film electrode. - Highlights: • Novel sol-gel synthesis of colorless LFP thin film electrode for transparent Li-ion battery. • High performance of the electrode at various current densities: 5, 10, 20, 50 and 100 μA/cm{sup 2}. • LFP nanoparticles exhibit an excellent electro-activity. • Colorless LFP thin film shows a transmittance above 80% versus FTO. • Higher transmittance of LFP electrode a potential candidate for electrochromic devices. - Abstract: We report a new sol-gel approach of synthesis of LiFePO{sub 4} (LFP) thin film and its application as cathode materials for transparent Li-ion battery in half-cell configuration. LFP thin films were obtained from an alcoholic colloidal suspension of iron acetylacetonate (Fe(AcAc){sub 3}) and aqueous lithium dihydrogen phosphate (LiH{sub 2}PO{sub 4}) deposited on fluorine tin oxide (FTO) glass substrate, followed by heating at 450 °C under nitrogen gas for 1 h. X-ray diffraction (XRD) confirmed that the LFP films have an orthorhombic crystal system with space group Pnma (62). Scanning electron microscopy (SEM) shows spherical LFP nanoparticles aggregates homogenously deposited all over the surface of FTO substrate containing 3-D open pores. The electrochemical behaviors of thin film vs Li/Li{sup +} cell were investigated by cyclic voltammetry and galvanostatic charge-discharge measurements. The cycle life was evaluated by running 1000 cycles of charge-discharge at a current density of 20 μA/cm{sup 2}. The transmission spectra reveal 85–90% of transparency versus FTO as reference, which makes it a potential candidate as a complementary electrode in electrochromic devices (ECDs).

Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

Energy Technology Data Exchange (ETDEWEB)

Venkatasubramanian, R; Colpitts, T

1997-07-01

Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

Y1Ba2Cu3O(7-delta) thin film dc SQUIDs (superconducting quantum interference device)

Science.gov (United States)

Racah, Daniel

1991-03-01

Direct current superconducting quantum interferometers (SQUIDs) based on HTSC thin films have been measured and characterized. The thin films used were of different quality: (1) Granular films on Sapphire substrates, prepared either by e-gun evaporation, by laser ablation or by MOCVD (metal oxide chemical vapor deposition), (2) Epitaxial films on MgO substrates. Modulations of the voltage on the SQUIDs as a function of the applied flux have been observed in a wide range of temperatures. The nature of the modulation was found to be strongly dependent on the morphology of the film and on its critical current. The SQUIDs based on granular films were relatively noisy, hysteretic and with a complicated V-phi shape. Those devices based on low quality (lowIc) granular films could be measured only at low temperatures (much lower than 77 K). While those of higher quality (granular films with high Ic) could be measured near to the superconductive transition. The SQUID based on high quality epitaxial film was measured near Tc and showed an anomalous, time dependent behavior.

Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

Energy Technology Data Exchange (ETDEWEB)

Liu, P., E-mail: liup0013@ntu.edu.sg; Chen, T. P., E-mail: echentp@ntu.edu.sg; Li, X. D.; Wong, J. I. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Z. [School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Y. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Leong, K. C. [GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

2014-01-20

A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼10{sup 9} Ω for a device with the radius of 50 μm) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼10{sup 3} Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.

A new automatic design method to develop multilayer thin film devices for high power laser applications

International Nuclear Information System (INIS)

Sahoo, N.K.; Apparao, K.V.S.R.

1992-01-01

Optical thin film devices play a major role in many areas of frontier technology like development of various laser systems to the designing of complex and precision optical systems. Design and development of these devices are really challenging when they are meant for high power laser applications. In these cases besides desired optical characteristics, the devices are expected to satisfy a whole range of different needs like high damage threshold, durability etc. In the present work a novel completely automatic design method based on Modified Complex Method has been developed for designing of high power thin film devices. Unlike most of the other methods it does not need any suitable starting design. A quarterwave design is sufficient to start with. If required, it is capable of generating its own starting design. The computer code of the method is very simple to implement. This report discusses this novel automatic design method and presents various practicable output designs generated by it. The relative efficiency of the method along with other powerful methods has been presented while designing a broadband IR antireflection coating. The method is also incorporated with 2D and 3D electric field analysis programmes to produce high damage threshold designs. Some experimental devices developed using such designs are also presented in the report. (author). 36 refs., 41 figs

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

Energy Technology Data Exchange (ETDEWEB)

Liu, Yong [Iowa State Univ., Ames, IA (United States)

2002-01-01

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H₂, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

Directory of Open Access Journals (Sweden)

Abdellah Boulouz

2014-01-01

Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

International Nuclear Information System (INIS)

Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

2015-01-01

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

Toward High-Performance Coatings for Biomedical Devices: Study on Plasma-Deposited Fluorocarbon Films and Ageing in PBS

Directory of Open Access Journals (Sweden)

Diego Mantovani

2010-03-01

Full Text Available High performance coatings tailored to medical devices represent a recognised approach to modulate surface properties. Plasma-deposited fluorocarbon films have been proposed as a potential stent coating. Previous studies have shown promising adhesion properties: the 35 nm-thick film sustained plastic deformation up to 25% such as induced during the clinical implantation. In this study, the compositional and morphological changes of plasma-deposited fluorocarbon films were examined during ageing in a pseudo-physiological medium, a phosphate buffer solution (PBS, by angle-resolved XPS, FT-IR data and AFM images. The evolution of the ageing process is discussed: defluorination and crosslinking yielded an oxidized protective top layer onto the films, which showed further degradation.

Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

Science.gov (United States)

Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

1998-01-01

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Method for making photovoltaic devices using oxygenated semiconductor thin film layers

Science.gov (United States)

Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

2014-12-16

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Syntheses and characterization of thin films of Te94Se6 nanoparticles for semiconducting and optical devices

International Nuclear Information System (INIS)

Salah, Numan; Habib, Sami S.; Memic, Adnan; Alharbi, Najlaa D.; Babkair, Saeed S.; Khan, Zishan H.

2013-01-01

Thin films of Te 94 Se 6 nanoparticles were synthesized using the physical vapor condensation technique at different argon (Ar) pressures. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy, absorption spectrum, photoluminescence (PL) and Raman spectroscopy. XRD results show that the as-grown films have a polycrystalline structure. SEM images display uniform nanoparticles in these films where the size increases from ∼ 12 to about 60 nm by decreasing Ar pressure from 667 to 267 Pa. These as-grown thin films were found to have direct band gaps, whose value decreases with increasing particle size. The absorption and extinction coefficients for these films were also investigated. PL emission spectra exhibit three bands peaking at 666, 718 and 760 nm, while Raman spectra displayed three bands located at 123, 143 and 169 cm −1 . No significant changes are observed in positions or intensities of these bands by decreasing the Ar pressure, except that of the last band of PL; where the intensity increases. The obtained results on this Te 94 Se 6 nanomaterial especially its controlled direct bandgap might be useful for development of optical disks and other semiconducting devices. - Highlights: ► Thin films of Te 94 Se 6 nanoparticles were grown at different argon (Ar) pressures. ► Size of the nanoparticles increased by decreasing Ar pressure. ► They have direct band gap, whose value decreases by increasing the particle size. ► These nanomaterials might be useful for development of semiconducting devices

AN INTERNATIONAL COOPERATION BY USING AN ALL-ENCOMPASSING PASSIVE RADON MONITOR.

Science.gov (United States)

Tommasino, L; Chen, J; Falcomer, R; Janik, M; Kanda, R; DeFelice, F; Cardellini, F; Trevisi, R; Leonardi, F; Magnoni, M; Chiaberto, E; Agnesod, G; Ragani, M Faure; Espinosa, G; Golzarri, J; Kozak, K; Mazur, J

2017-11-01

The recently developed radon film-badge makes it possible to measure radon indoors, in soil, in water and/or in aqueous media (e.g. mud). As a result of its wide response linearity, this monitor has been successfully used to measure radon in-water with concentrations from 10 to ~10 000 Bq/L. By exploiting the unique characteristics of this badge, a mini-survey has been carried out by Health Canada in which radon in water was measured from 12 private wells, as well as in tap water originating from the Ottawa River. Due to the widespread interest of different laboratories in using these passive monitors, laboratories were provided with plastic films to construct their own badges by using in-house CR-39 detectors. Monitors were then irradiated by a known radon concentration at the National Institute of Radiation Metrology (ENEA)'s radon chamber and sent back to each laboratory for processing and counting. Even though these laboratories have been using different etching- and counting-procedures, the film-badge responses varied only within ~12%. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

International Nuclear Information System (INIS)

Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

2005-01-01

Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

Directory of Open Access Journals (Sweden)

Jhansirani KOTCHARLAKOTA

2016-05-01

Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

Lithographically patterned thin activated carbon films as a new technology platform for on-chip devices.

Science.gov (United States)

Wei, Lu; Nitta, Naoki; Yushin, Gleb

2013-08-27

Continuous, smooth, visibly defect-free, lithographically patterned activated carbon films (ACFs) are prepared on the surface of silicon wafers. Depending on the synthesis conditions, porous ACFs can either remain attached to the initial substrate or be separated and transferred to another dense or porous substrate of interest. Tuning the activation conditions allows one to change the surface area and porosity of the produced carbon films. Here we utilize the developed thin ACF technology to produce prototypes of functional electrical double-layer capacitor devices. The synthesized thin carbon film electrodes demonstrated very high capacitance in excess of 510 F g(-1) (>390 F cm(-3)) at a slow cyclic voltammetry scan rate of 1 mV s(-1) and in excess of 325 F g(-1) (>250 F cm(-3)) in charge-discharge tests at an ultrahigh current density of 45,000 mA g(-1). Good stability was demonstrated after 10,000 galvanostatic charge-discharge cycles. The high values of the specific and volumetric capacitances of the selected ACF electrodes as well as the capacity retention at high current densities demonstrated great potential of the proposed technology for the fabrication of various on-chip devices, such as micro-electrochemical capacitors.

21 CFR 892.1840 - Radiographic film.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Radiographic film. 892.1840 Section 892.1840 Food... DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1840 Radiographic film. (a) Identification. Radiographic film is a device that consists of a thin sheet of radiotransparent material coated on one or both...

Measurement of radiocesium concentration in trees using cumulative gamma radiation dose rate detection systems - A simple presumption for radiocesium concentration in living woods using glass-badge based gamma radiation dose rate detection system

Energy Technology Data Exchange (ETDEWEB)

Yoshihara, T.; Hashida, S.N. [Plant Molecular Biology, Laboratory of Environmental Science, Central Research Institute of Electric Power Industry (CRIEPI), 1646 Abiko, Chiba 270-1194 (Japan); Kawachi, N.; Suzui, N.; Yin, Y.G.; Fujimaki, S. [Radiotracer Imaging Gr., Quantum Beam Science Center, Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Nagao, Y.; Yamaguchi, M. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2014-07-01

Radiocesium from the severe accident at the Fukushima Dai-ichi Nuclear Power Plant on 11 March 2011 contaminates large areas. After this, a doubt for forest products, especially of mushroom, is indelible at the areas. Pruned woody parts and litters are containing a considerable amount of radiocesium, and generates a problem at incineration and composting. These mean that more attentive survey for each subject is expected; however, the present survey system is highly laborious/expensive and/or non-effective for this purpose. On the other hand, we can see a glass-badge based gamma radiation dose rate detection system. This system always utilized to detect a personal cumulative radiation dose, and thus, it is not suitable to separate a radiation from a specific object. However, if we can separate a radiation from a specific object and relate it with the own radiocesium concentration, it would enable us to presume the specific concentration with just an easy monitoring but without a destruction of the target nature and a complicated process including sampling, pre-treatment, and detection. Here, we present the concept of the measurement and results of the trials. First, we set glass-badges (type FS, Chiyoda Technol Corp., Japan) on a part of bough (approximately 10 cm in diameter) of Japanese flowering cherry trees (Prunus x yedoensis cv. Somei-Yoshino) with four different settings: A, a direct setting without any shield; B, a setting with an aluminum shield between bough and the glass-badge; C, a setting with a lead shield between bough and the glass-badge; D, a setting with a lead shield covering the glass-badge to shut the radiation from the surrounding but from bough. The deduction between the amount of each setting should separate a specific radiation of the bough from unlimited radiation from the surrounding. Even if the hourly dose rate is not enough to count the difference, a moderate cumulative dose would clear the difference. In fact, results demonstrated a

Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

International Nuclear Information System (INIS)

Likhachev, D.V.

2015-01-01

During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

Energy Technology Data Exchange (ETDEWEB)

Likhachev, D.V., E-mail: dmitriy.likhachev@globalfoundries.com

2015-08-31

During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

RFID and Memory Devices Fabricated Integrally on Substrates

Science.gov (United States)

Schramm, Harry F.

2004-01-01

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

Record mobility in transparent p-type tin monoxide films and devices by phase engineering

KAUST Repository

Caraveo-Frescas, Jesus Alfonso; Nayak, Pradipta K.; Al-Jawhari, Hala A.; Bianchi Granato, Danilo; Schwingenschlö gl, Udo; Alshareef, Husam N.

2013-01-01

developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values

Comparing Digital Badges-and-Points with Classroom Token Systems: Effects on Elementary School ESL Students' Classroom Behavior and English Learning

Science.gov (United States)

Homer, Ryan; Hew, Khe Foon; Tan, Cheng Yong

2018-01-01

This paper reports the findings of a field experiment that gamified the classroom experience of elementary school ESL students by implementing digital badges-and-points which students could earn by achieving specific behavioral and learning goals. Altogether, 120 children in eight different classes participated in this study. Four of the classes…

Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

Directory of Open Access Journals (Sweden)

C. C. Huang

2012-01-01

Full Text Available Germanium antimony (Ge-Sb thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD. Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM with energy dispersive X-ray analysis (EDX and X-ray diffraction (XRD techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2016-04-30

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

Science.gov (United States)

Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

2014-06-01

Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

Method for making an improved magnetic encoding device

Science.gov (United States)

Fox, Richard J.

1981-01-01

A magnetic encoding device and method for making the same are provided for use as magnetic storage mediums in identification control applications which give output signals from a reader that are of shorter duration and substantially greater magnitude than those of the prior art. Magnetic encoding elements are produced by uniformly bending wire or strip stock of a magnetic material longitudinally about a common radius to exceed the elastic limit of the material and subsequently mounting the material so that it is restrained in an unbent position on a substrate of nonmagnetic material. The elements are spot weld attached to a substrate to form a binary coded array of elements according to a desired binary code. The coded substrate may be enclosed in a plastic laminate structure. Such devices may be used for security badges, key cards, and the like and may have many other applications.

Contribution of the cashew gum (Anacardium occidentale L.) for development of layer-by-layer films with potential application in nanobiomedical devices

Energy Technology Data Exchange (ETDEWEB)

Araujo, I.M.S. [Departamento de Quimica, Centro de Ciencias da Natureza, CCN, Universidade Federal do Piaui, UFPI, Teresina, PI, 64049-550 (Brazil); Nucleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Parnaiba, CMRV, Universidade Federal do Piaui, UFPI, Parnaiba, PI, 64202-020 (Brazil); Zampa, M.F. [Nucleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Parnaiba, CMRV, Universidade Federal do Piaui, UFPI, Parnaiba, PI, 64202-020 (Brazil); Campus Parnaiba, Instituto Federal de Educacao Ciencia e Tecnologia do Piaui, IFPI, Parnaiba, PI, 64210-260 (Brazil); Moura, J.B.; Santos, J.R. dos [Departamento de Quimica, Centro de Ciencias da Natureza, CCN, Universidade Federal do Piaui, UFPI, Teresina, PI, 64049-550 (Brazil); Eaton, P. [REQUIMTE, Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre, Porto, 4169-007 (Portugal); Zucolotto, V. [Grupo de Biofisica Molecular Sergio Mascarenhas, Instituto de Fisica de Sao Carlos, IFSC, USP, Sao Carlos, SP, 13566-590 (Brazil); and others

2012-08-01

The search for bioactive molecules to be employed as recognition elements in biosensors has stimulated researchers to pore over the rich Brazilian biodiversity. In this sense, we introduce the use of natural cashew gum (Anacardium occidentale L.) as an active biomaterial to be used in the form of layer-by-layer films, in conjunction with phthalocyanines, which were tested as electrochemical sensors for dopamine detection. We investigated the effects of chemical composition of cashew gum from two different regions of Brazil (Piaui and Ceara states) on the physico-chemical characteristics of these nanostructures. The morphology of the nanostructures containing cashew gum was studied by atomic force microscopy which indicates that smooth films punctuated by globular features were formed that showed low roughness values. The results indicate that, independent of the origin, cashew gum stands out as an excellent film forming material with potential application in nanobiomedical devices as electrochemical sensors. Highlights: Black-Right-Pointing-Pointer This study focused on the use of cashew gum for the formation of LbL films. Black-Right-Pointing-Pointer LbL films containing cashew gums were investigated by AFM and cyclic voltammetry. Black-Right-Pointing-Pointer Cashew gum contributed to obtain stable films with well-defined redox processes. Black-Right-Pointing-Pointer Cashew gum films detected dopamine in low concentrations. Black-Right-Pointing-Pointer These LbL films presented potential application in nanobiomedical devices.

Contribution of the cashew gum (Anacardium occidentale L.) for development of layer-by-layer films with potential application in nanobiomedical devices

International Nuclear Information System (INIS)

Araújo, I.M.S.; Zampa, M.F.; Moura, J.B.; Santos, J.R. dos; Eaton, P.; Zucolotto, V.

2012-01-01

The search for bioactive molecules to be employed as recognition elements in biosensors has stimulated researchers to pore over the rich Brazilian biodiversity. In this sense, we introduce the use of natural cashew gum (Anacardium occidentale L.) as an active biomaterial to be used in the form of layer-by-layer films, in conjunction with phthalocyanines, which were tested as electrochemical sensors for dopamine detection. We investigated the effects of chemical composition of cashew gum from two different regions of Brazil (Piauí and Ceará states) on the physico-chemical characteristics of these nanostructures. The morphology of the nanostructures containing cashew gum was studied by atomic force microscopy which indicates that smooth films punctuated by globular features were formed that showed low roughness values. The results indicate that, independent of the origin, cashew gum stands out as an excellent film forming material with potential application in nanobiomedical devices as electrochemical sensors. Highlights: ► This study focused on the use of cashew gum for the formation of LbL films. ► LbL films containing cashew gums were investigated by AFM and cyclic voltammetry. ► Cashew gum contributed to obtain stable films with well-defined redox processes. ► Cashew gum films detected dopamine in low concentrations. ► These LbL films presented potential application in nanobiomedical devices.

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

Energy Technology Data Exchange (ETDEWEB)

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Aparicio, R.; Dobson, K.

2003-01-01

This report describes results achieved during a three-year subcontract to develop and understand thin-film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

BiFeO3 epitaxial thin films and devices: past, present and future

Science.gov (United States)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Radiation exposures of medical employes and its management

International Nuclear Information System (INIS)

Saegusa, Kenji; Arimizu, Noboru; Uchiyama, Akira.

1982-01-01

For the five years period from April, 1976, to March, 1981, the usage of film badges at the hospital of Chiba University is described as follows: the number of personnel using film badges, the distribution of radiation exposure dose, and the employes exposed beyond 500 mrem yearly in respective years, departments and professional types. The cumulative number of personnel was 2,476 (yearly average was 495). Professional types were physician, nurse, radiation technician, researcher, etc. The number of personnel using film badges has been increasing year after year; of which about 500, 70% are physicians. A cumulative total of the employes exposed exceeding 500 mrem yearly was 11, ten being physicians; the highest dose was 1,840 mrem. The average yearly exposure dose per person was the highest in radiation technicians (100 - 30 mrem/person/year), followed by physicians (50 - 24 mrem) and nurses (9 - 1 mrem). As a whole, the value was 45 - 20 mrem/person/year. (J.P.N.)

Radiation exposures of medical employees and its management

Energy Technology Data Exchange (ETDEWEB)

Saegusa, K; Arimizu, N [Chiba Univ. (Japan). School of Medicine; Uchiyama, A

1982-03-01

For the five years period from April, 1976, to March, 1981, the usage of film badges at the hospital of Chiba University is described as follows: the number of personnel using film badges, the distribution of radiation exposure dose, and the employees exposed beyond 500 mrem yearly in respective years, departments and professional types. The cumulative number of personnel was 2,476 (yearly average was 495). Professional types were physician, nurse, radiation technician, researcher, etc. The number of personnel using film badges has been increasing year after year; of which about 500, 70% are physicians. A cumulative total of the employees exposed exceeding 500 mrem yearly was 11, ten being physicians; the highest dose was 1,840 mrem. The average yearly exposure dose per person was the highest in radiation technicians (100 - 30 mrem/person/year), followed by physicians (50 - 24 mrem) and nurses (9 - 1 mrem). As a whole, the value was 45 - 20 mrem/person/year.

High temperature superconducting devices for SQUIDs, HF- and FIR-applications. Subproject: Thin-film heterostructures for devices and loss mechanisms in HTS. Final report

International Nuclear Information System (INIS)

Froehlich, O.

1994-06-01

The successful use of electronic devices fabricated from the High Temperature Superconductors (HTS) in SQUID systems as well as HF- and FIR-applications requires the development of a suitable thin-film and device technology. Within the present research project we successfully established the technological base for the deposition and patterning of epitaxial HTS thin-films (YBaCuO, NdCeCuO) and heterostructures of HTS and insulating materials (e.g. NdGaO 3 ). YBaCuO/NdCeCuO superlattices could be successfully fabricated such that both components of the hterostructure were in a superconducting state. This allows for the fabrication and study of superconducting p-n structures. With respect to the fabrication of single grain boundary Josephson junctions based on the bicrystal technique we could establish an international leadership. The small spread of the junction parameters (∝20%) allowed the controllable fabrication of simple devices such as SQUIDs or flux-flow transistors. By the development of a new measuring technique the homogeneity of the critical current density distribution in grain-boundary junctions could be investigated on a sub-μm-scale. Within this project we also could establish a good understanding of the physical background of the transport phenomena in the mixed state of HTS in the presence of a temperature gradient. (orig./MM) [de

Studies on applications of functional organic-thin-films for lithography on semiconductor device production

International Nuclear Information System (INIS)

Ogawa, Kazufumi

1988-12-01

This report describes some experimental results of studies in an attempt to contribute to the development of ultra-fine lithography which is used for the manufacture of semiconductor devices with design rule below 0.5 μm, and contains (1) manufacture of the exposure apparatus, (2) establishment of the resist process technology, and (3) preparation of the resist materials. The author designed and manufactured the KrF excimer laser stepper which is supposed to be most promising for practical uses. In the resist processing technology, the water-soluble contrast enhanced lithography (CEL) process was developed and this process has advantages is that high pattern contrast and large focus depth latitude were easily obtained. Finally, for resist materials, use of Langmuir-Blodgett (LB) films was investigated since the LB technique provides the method to prepare extremely thin organic films which are uniform in molecular level, and the reaction mechanism of the LB films of unsaturated compounds under irradiation with high energy beams was elucidated. (author)

[Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

Science.gov (United States)

Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

2010-06-01

The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

A practical approach towards minimisation of latent image fading in personnel monitoring films

International Nuclear Information System (INIS)

Dhond, R.V.; Patel, P.H.; Shenoy, K.S.; Adtani, M.M.

1980-01-01

A serious drawback of the film badges used in personnel monitoring is the latent image fading often as high as 95% when they are subjected to extreme climatic conditions such as high humidities and temperatures. Current data on latent image fading in personnel monitoring films of various brands of manufacturers (Kodak, Agfa-Gevaert, Du Pont) are summarized. If individual film packs are hermitically sealed in polythene envelopes, fading is reduced to 20%. Studies were, therefore, conducted on Kodak type 2 films to observe the radiation response of films subjected alternatively to humid (20deg C and 90% r.h.) conditions for 8 hours and dry (20deg C and 30 to 40% r.h.) conditions for 16 hours with a view to find out a practicable and simple method to minimise the error due to fading. The films were then exposed to 600, 1200, 2400 and 4800 mR of radium-226 gammas after one week of storage and replaced in their experimental conditions. The films were processed after zero, one and two weeks of their storage in their respective conditions. Dose versus density curves of films were plotted. A fading less than 10% is shown for a storage period of two weeks. It is also suggested that films be kept in a desiccator having dry silica gel crystals during the periods when they are not being worn by the radiation workers. (M.G.B.)

Main principles of passive devices based on graphene and carbon films in microwave-THz frequency range

Science.gov (United States)

Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadezhda I.; Batrakov, Konstantin G.; Kaplas, Tommi; Lamberti, Patrizia; Kotsilkova, Rumiana; Lambin, Philippe

2017-07-01

The ability of thin conductive films, including graphene, pyrolytic carbon (PyC), graphitic PyC (GrPyC), graphene with graphitic islands (GrI), glassy carbon (GC), and sandwich structures made of all these materials separated by polymer slabs to absorb electromagnetic radiation in microwave-THz frequency range, is discussed. The main physical principles making a basis for high absorption ability of these heterostructures are explained both in the language of electromagnetic theory and using representation of equivalent electrical circuits. The idea of using carbonaceous thin films as the main working elements of passive radiofrequency (RF) devices, such as shields, filters, polarizers, collimators, is proposed theoretically and proved experimentally. The important advantage of PyC, GrI, GrPyC, and GC is that, in contrast to graphene, they either can be easily deposited onto a dielectric substrate or are strong enough to allow their transfer from the catalytic substrate without a shuttle polymer layer. This opens a new avenue toward the development of a scalable protocol for cost-efficient production of ultralight electromagnetic shields that can be transferred to commercial applications. A robust design via finite-element method and design of experiment for RF devices based on carbon/graphene films and sandwiches is also discussed in the context of virtual prototyping.

Record mobility in transparent p-type tin monoxide films and devices by phase engineering

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2013-06-25

Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

International Nuclear Information System (INIS)

Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

2004-01-01

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

"Space slitter" for film or tape

Science.gov (United States)

Johnson, W. H.

1978-01-01

Device cuts film or tape into strips by guiding film in channel under cutting blades. Device is operated by lifting pressure bar to insert blades into film. Film is then pulled through blades. Cutter has potential uses in advertising, commercial art, and publishing fields.

Determination of BPA, BPB, BPF, BADGE and BFDGE in canned energy drinks by molecularly imprinted polymer cleaning up and UPLC with fluorescence detection.

Science.gov (United States)

Gallo, Pasquale; Di Marco Pisciottano, Ilaria; Esposito, Francesco; Fasano, Evelina; Scognamiglio, Gelsomina; Mita, Gustavo Damiano; Cirillo, Teresa

2017-04-01

A new method for simultaneous determination of five bisphenols in canned energy drinks by UPLC with fluorescence detection, after clean up on molecularly imprinted polymers, is herein described. The method was validated at two concentration levels, calculating trueness, repeatability and within-laboratory reproducibility, specificity, linearity of detector response, the limits of quantifications and the limits of detection for each bisphenol. The method is specific, reliable and very sensitive, allowing for determination of bisphenol F diglycidyl ether (BFDGE), bisphenol A (BPA), bisphenol B (BPB), bisphenol F (BPF) and bisphenol A diglycidyl ether (BADGE) down to 0.50ng/mL; it was employed to determine contamination levels from these bisphenols in forty energy drinks of different brands, collected from the market in Naples. BPA was detected in 17 out of 40 samples (42.5%); in some energy drinks also BPF, BADGE and BFDGE were determined. Copyright © 2016 Elsevier Ltd. All rights reserved.

Self-assembled graphene/azo polyelectrolyte multilayer film and its application in electrochemical energy storage device.

Science.gov (United States)

Wang, Dongrui; Wang, Xiaogong

2011-03-01

Graphene/azo polyelectrolyte multilayer films were fabricated through electrostatic layer-by-layer (LbL) self-assembly, and their performance as electrochemical capacitor electrode was investigated. Cationic azo polyelectrolyte (QP4VP-co-PCN) was synthesized through radical polymerization, postpolymerization azo coupling reaction, and quaternization. Negatively charged graphene nanosheets were prepared by a chemically modified method. The LbL films were obtained by alternately dipping a piece of the pretreated substrates in the QP4VP-co-PCN and nanosheet solutions. The processes were repeated until the films with required numbers of bilayers were obtained. The self-assembly and multilayer surface morphology were characterized by UV-vis spectroscopy, AFM, SEM, and TEM. The performance of the LbL films as electrochemical capacitor electrode was estimated using cyclic voltammetry. Results show that the graphene nanosheets are densely packed in the multilayers and form random graphene network. The azo polyelectrolyte cohesively interacts with the nanosheets in the multilayer structure, which prevents agglomeration of graphene nanosheets. The sheet resistance of the LbL films decreases with the increase of the layer numbers and reaches the stationary value of 1.0 × 10(6) Ω/square for the film with 15 bilayers. At a scanning rate of 50 mV/s, the LbL film with 9 bilayers shows a gravimetric specific capacitance of 49 F/g in 1.0 M Na(2)SO(4) solution. The LbL films developed in this work could be a promising type of the electrode materials for electric energy storage devices.

Multilayer Integrated Film Bulk Acoustic Resonators

CERN Document Server

Zhang, Yafei

2013-01-01

Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

A LC-MS/MS method for the determination of BADGE-related and BFDGE-related compounds in canned fish food samples based on the formation of [M+NH(4)](+) aducts.

Science.gov (United States)

Míguez, J; Herrero, C; Quintás, I; Rodríguez, C; Gigosos, P G; Mariz, O C

2012-12-01

A new and simple liquid chromatography tandem mass-spectrometry method for the determination of different bisphenol A (BPA) derivatives such as bisphenol A diglycidyl ether (BADGE), bisphenol F diglycidyl ether (BFDGE) and their reaction products with water and hydrochloric acid in different fish food products was developed. The extraction procedure and the chromatographic conditions were optimised for complex food matrices such as fish products. Food samples were homogenised and extracted with a 1:1 solution of acetonitrile-hexane, the solvent was eliminated in a N(2) stream and the extract was reconstituted with 0.5mL of a 0.01M solution of ammonium formate. The sample solution obtained was directly measured by LC-MS/MS without any further purification under the developed conditions. The use of a mobile phase composed by ammonium formate-methanol in a binary gradient mode produced [M+NH(4)](+) aducts for the different BADGEs and BFDGEs. These aduct's fragmentations were employed for the LC-MS/MS quantification of BPA derivatives in canned fish samples. The results of the validation were appropriate: the method was linear for BADGE and its hydrolysed derivatives up to 1000μgkg(-1), for the remaining compounds linearity achieved up to 100μgkg(-1). Quantification limits were in the range 2-10μgkg(-1). RSD (intra and inter-day) was 6-12% and the recovery was comprised between 89% and 109%. Under the optimised conditions, the chromatographic separation was performed in 8min per sample. The method was applied to the determination of BADGE, BFDGE and their reaction products in different samples of canned fish from Spanish origin. Migration results obtained were in compliance with the EU regulations. Copyright © 2012 Elsevier Ltd. All rights reserved.

Evaluation of two-dimensional bolus effect of immobilization/support devices on skin doses: A radiochromic EBT film dosimetry study in phantom

International Nuclear Information System (INIS)

Chiu-Tsao, Sou-Tung; Chan, Maria F.

2010-01-01

Purpose: In this study, the authors have quantified the two-dimensional (2D) perspective of skin dose increase using EBT film dosimetry in phantom in the presence of patient immobilization devices during conventional and IMRT treatments. Methods: For 6 MV conventional photon field, the authors evaluated and quantified the 2D bolus effect on skin doses for six different common patient immobilization/support devices, including carbon fiber grid with Mylar sheet, Orfit carbon fiber base plate, balsa wood board, Styrofoam, perforated AquaPlast sheet, and alpha-cradle. For 6 and 15 MV IMRT fields, a stack of two film layers positioned above a solid phantom was exposed at the air interface or in the presence of a patient alpha-cradle. All the films were scanned and the pixel values were converted to doses based on an established calibration curve. The authors determined the 2D skin dose distributions, isodose curves, and cross-sectional profiles at the surface layers with or without the immobilization/support device. The authors also generated and compared the dose area histograms (DAHs) and dose area products from the 2D skin dose distributions. Results: In contrast with 20% relative dose [(RD) dose relative to d max on central axis] at 0.0153 cm in the film layer for 6 MV 10x10 cm 2 open field, the average RDs at the same depth in the film layer were 71%, 69%, 55%, and 57% for Orfit, balsa wood, Styrofoam, and alpha-cradle, respectively. At the same depth, the RDs were 54% under a strut and 26% between neighboring struts of a carbon fiber grid with Mylar sheet, and between 34% and 56% for stretched perforated AquaPlast sheet. In the presence of the alpha-cradle for the 6 MV (15 MV) IMRT fields, the hot spot doses at the effective measurement depths of 0.0153 and 0.0459 cm were 140% and 150% (83% and 89%), respectively, of the isocenter dose. The enhancement factor was defined as the ratio of a given DAH parameter (minimum dose received in a given area) with and without

Syntheses and characterization of thin films of Te{sub 94}Se{sub 6} nanoparticles for semiconducting and optical devices

Energy Technology Data Exchange (ETDEWEB)

Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Habib, Sami S.; Memic, Adnan [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alharbi, Najlaa D. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Sciences Faculty for Girls, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Babkair, Saeed S. [Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Khan, Zishan H. [Department of Applied Sciences and Humanities, Jamia Millia Islamia (Central University), New Delhi-110025 (India)

2013-03-01

Thin films of Te{sub 94}Se{sub 6} nanoparticles were synthesized using the physical vapor condensation technique at different argon (Ar) pressures. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy, absorption spectrum, photoluminescence (PL) and Raman spectroscopy. XRD results show that the as-grown films have a polycrystalline structure. SEM images display uniform nanoparticles in these films where the size increases from ∼ 12 to about 60 nm by decreasing Ar pressure from 667 to 267 Pa. These as-grown thin films were found to have direct band gaps, whose value decreases with increasing particle size. The absorption and extinction coefficients for these films were also investigated. PL emission spectra exhibit three bands peaking at 666, 718 and 760 nm, while Raman spectra displayed three bands located at 123, 143 and 169 cm{sup −1}. No significant changes are observed in positions or intensities of these bands by decreasing the Ar pressure, except that of the last band of PL; where the intensity increases. The obtained results on this Te{sub 94}Se{sub 6} nanomaterial especially its controlled direct bandgap might be useful for development of optical disks and other semiconducting devices. - Highlights: ► Thin films of Te{sub 94}Se{sub 6} nanoparticles were grown at different argon (Ar) pressures. ► Size of the nanoparticles increased by decreasing Ar pressure. ► They have direct band gap, whose value decreases by increasing the particle size. ► These nanomaterials might be useful for development of semiconducting devices.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

Electrochemistry of poly(3,4-ethylenedioxythiophene)-polyaniline/ Prussian blue electrochromic devices containing an ionic liquid based gel electrolyte film.

Science.gov (United States)

Deepa, Melepurath; Awadhia, Arvind; Bhandari, Shweta

2009-07-21

Electrochromic devices based on poly(3,4-ethylenedioxythiophene) (PEDOT) as the cathodic coloring electrode and polyaniline (PANI) or Prussian blue (PB) as the counter electrode containing a highly conductive, self-supporting, distensible and transparent polymer-gel electrolyte film encapsulating an ionic liquid, 1-butyl-1-methylpyrrolidiniumbis-(trifluoromethylsulfonyl)imide, have been fabricated. Polarization, charge transfer and diffusion processes control the electrochemistry of the functional electrodes during coloration and bleaching and these phenomena differ when PEDOT and PANI/PB were employed alternately as working electrodes. While the electrochemical impedance response shows good similitude for PEDOT and PANI electrodes, the responses of PEDOT and PB were significantly different in the PEDOT-PB device, especially during reduction of PB, wherein the overall amplitude of the impedance response is enormous. Large values of the coloration efficiency maxima of 281 cm2 C(-1) (lambda = 583 nm) and 274 cm2 C(-1) (lambda = 602 nm), achieved at -1.0 and -1.5 V for the PEDOT PANI and PEDOT-PB devices have been correlated to the particularly low magnitude of charge transfer resistance and high polarization capacitance operative at the PEDOT ionic liquid based electrolyte interface at these dc potentials, thus allowing facile ion-transport and consequently resulting in enhanced absorption modulation. Moderately fast switching kinetics and the ability of these devices to sustain about 2500 cycles of clear-to-dark and dark-to-clear without incurring major losses in the optical contrast, along with the ease of construction of these cells in terms of high scalability and reproducibility of the synthetic procedure for fabrication of the electrochromic films and the ionic liquid based gel electrolyte film, are indicators of the promise these devices hold for practical applications like electrochromic windows and displays.

Suppression of hydrogenated carbon film deposition by scavenger techniques and their application to the tritium inventory control of fusion devices

International Nuclear Information System (INIS)

Tabares, F.L.; Tafalla, D.; Tanarro, I.; Herrero, V.J.; Islyaikin, A.; Maffiotte, C.

2002-01-01

The well-known radical and ion scavenger techniques of application in amorphous hydrogenated carbon film deposition studies are investigated in relation to the mechanism of tritium and deuterium co-deposition in carbon-dominated fusion devices. A particularly successful scheme results from the injection of nitrogen into methane/hydrogen plasmas for conditions close to those prevailing in the divertor region of present fusion devices. A complete suppression of the a-C : H film deposition has been achieved for N 2 /CH 4 ratios close to one in methane (5%)/hydrogen DC plasma. The implications of these findings in the tritium retention control in future fusion reactors are addressed. (author). Letter-to-the-editor

Effects of Long-Term Static Bending Deformation on a Barrier Thin Film for Flexible Organic Optoelectronic Devices

Directory of Open Access Journals (Sweden)

Hung-I Lu

2018-03-01

Full Text Available The objective of this study is to investigate the effect of long-term static bending on the encapsulation properties of a commercial barrier thin film for flexible optoelectronic devices. Encapsulation properties of the barrier film are evaluated under long-term static bending at various radii of curvature. Experimental results reveal that no significantly detrimental effect on the water vapor transmission rate (WVTR at 40 °C and 90% RH is found for compressive bending up to 1000 h and for tensile bending up to 100 h with a radius of curvature of 5 mm or larger. However, WVTR of the barrier thin film is significantly increased and cracks are found in the barrier film when subjected to tensile bending of a radius of 10 mm or 5 mm for 1000 h. The expected WVTR of the given barrier thin film is numerically computed using a three-dimensional (3D finite element model. Numerical results indicate that, with the presence of cracks in the barrier thin film, the WVTR increases for an apparent increase in moisture entrances. The WVTR calculated by the 3D cracking model concurs with the experimental results.

A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

Science.gov (United States)

Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

2012-11-02

Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

Science.gov (United States)

Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

2000-01-01

Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

International Nuclear Information System (INIS)

Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

2000-01-01

Precise control of composition and microstructure is critical for the production of (Ba x Sr 1-x )Ti 1+y O 3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba 0.5 Sr 0.5 TiO 3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O 2 ) process pressure, while the O 2 /Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. (c) 2000 American Institute of Physics

Effect of substituents on electronic properties, thin film structure and device performance of dithienothiophene-phenylene cooligomers

International Nuclear Information System (INIS)

Zhang Shiming; Guo Yunlong; Xi Hongxia; Di Chongan; Yu Jian; Zheng Kai; Liu Ruigang; Zhan Xiaowei; Liu Yunqi

2009-01-01

Dithienothiophene-phenylene cooligomers with n-hexyloxy or n-dodecyloxy substituents have been synthesized and compared to the previously reported unsubstituted parent compound. The effect of substituents on the thermal, electronic, optical, thin film structure and field-effect transistor (OFET) properties was investigated. Structural phase transitions from highly-ordered nanocrystalline to liquid crystalline were observed at 241 and 213 deg. C for n-hexyloxy- and n-dodecyloxy-substituted compounds respectively, different from the parent compound. For the alkoxy-substituted compounds, the absorption spectra in thin film blue shift 50 nm, while the fluorescence spectra in thin film red shift 88-100 nm compared to those in solution. The OFET devices based on the alkoxy-substituted compounds exhibit mobilities as high as ca 0.02 cm 2 V -1 s -1 and their performance is sensitive to the alkoxy substituents and substrate temperatures

Novel electrochromic devices based on composite films of poly(2,5-dimethoxyaniline)-waterborne polyurethane

International Nuclear Information System (INIS)

Yang, C.-H.; Chong, L.-W.; Huang, L.-M.; Lee, Y.-L.; Wen, T.-C.

2005-01-01

Waterborne polyurethane (WPU) was spin-coated on indium tin oxide (ITO) coated glass. Poly(2,5-dimethoxyaniline) (PDMA) was deposited using electrochemical polymerization as conducting composite film on the above WPU/ITO electrode and used as an electrode in an electrochromic device assembly. Tungsten oxide (WO 3 ) coated ITO glass was used as the other electrode with LiClO 4 doped gelled polyethylene oxide (PEO) as polymer electrolyte. The configuration of an electrochromic device was assembled: ITO/WPU-PDMA II LiClO 4 -PC-PEO (400,000) II WO 3 /ITO, where PC represents propylene carbonate. The characterization of the single electrodes, ITO/WPU-PDMA composite, ITO/WO 3 , and the device was performed by using cyclic voltammetry. The columbic efficiency (CE) of the ITO/WPU-PDMA composite and ITO/WO 3 electrodes were close to 100%. The optical contrast of the single electrodes and the device were determined by UV-vis spectroelectrochemical studies. A visible contrast in color upon switching the potential from -1.50 to +1.50 V was noticed for the device. The device was pale yellow at -1.5 V and dark green at +1.5 V. The CE of the device was 91%. Double potential chronamperomtry was used to determine the response time of coloring and bleaching processes. The bleaching process was found to be faster than coloring. The stability of the device was established by polarizing the device and recording the UV-vis spectrum in open circuit conditions. Bleaching state is more stable than coloring state

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters

International Nuclear Information System (INIS)

Hirano, Hideki; Tanaka, Shuji; Kimura, Tetsuya; Koutsaroff, Ivoyl P; Kadota, Michio; Hashimoto, Ken-ya; Esashi, Masayoshi

2013-01-01

This paper presents a film transfer process to integrate barium strontium titanate (BST) metal–insulator–metal (MIM) structures with surface acoustic wave (SAW) devices on a lithium niobate (LN) substrate. A high-quality BST film grown on a Si substrate above 650 °C was patterned into the MIM structures, and transferred to a LN substrate below 130 °C by Ar-plasma-activated Au–Au bonding and the Si lost wafer process. Simple test SAW devices with the transferred BST variable capacitors (VCs) were fabricated and characterized. The resonance frequency of a one-port SAW resonator with the VC connected in series changed from 999 to 1018 MHz, when a dc bias voltage of 3 V was applied to the VC. Although the observed frequency tuning range was smaller than expected due to the degradation of BST in the process, the experimental result demonstrated that a tunable SAW filter with the transferred BST VCs was feasible. (paper)

The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

International Nuclear Information System (INIS)

Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

2013-01-01

The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

International Nuclear Information System (INIS)

Mehta, B.R.

2009-01-01

Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

Novel approach to growth of precipitate-free, high-quality oxide thin films suitable for device applications

International Nuclear Information System (INIS)

Endo, K.; Badica, P.; Sato, H.; Akoh, H.

2006-01-01

To eliminate precipitates-segregates that can easily occur on the thin film surfaces of the multicomponent materials for electronics, a new approach is proposed, consisting of the following aspects: first, on the substrates, artificial steps of predefined height and width are produced, and second, films are grown on such substrates. The width of the step is taken equal to the 'double of the migration length' of the atomic species depositing on the substrate. In these conditions, precipitates migrate and gather at the step edges where the free energy is lowest and the resulting totally precipitate-free surface of the film on the step is suitable for device applications or integration purposes. The method has several other important advantages and they are discussed in the text. Using this new approach we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown by MOCVD on (001) SrTiO 3 single crystal substrates with artificial steps of about 20 μm width

Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device

International Nuclear Information System (INIS)

Umar, Z.A.; Rawat, R.S.; Tan, K.S.; Kumar, A.K.; Ahmad, R.; Hussain, T.; Kloc, C.; Chen, Z.; Shen, L.; Zhang, Z.

2013-01-01

Highlights: •The energetic ions and electron beams are used to synthesize TiC x /SiC/a-C:H films. •As-deposited crystalline and hard nanocomposite TiC x /SiC/a-C:H films are synthesized. •Very high average deposition rates of 68 nm/shot are achieved using dense plasma focus. •The maximum hardness of 22 GPa is achieved at the surface of the film. -- Abstract: Thin films of TiC x /SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiC x /SiC/a-C:H nanocomposite thin films using CH 4 :Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH 4 :Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiC x /SiC phases for thin film synthesized using different number of focus shots with CH 4 :Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH 4 :Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH 4 :Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiC x /SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiC x /SiC/a-C:H coatings

SIRAD – Personal radiation detectors

International Nuclear Information System (INIS)

Alnawaf, Hani; Butson, Martin J.; Yu, Peter K.N.; Cheung, Tsang

2011-01-01

SIRAD badge dosimeters provide a visual qualitative measurement of exposure to radiation for mid range dose exposure. This is performed using an active radiochromic dosimeter in a transparent window, combined into a badge assembly. When irradiated, the badges active window turns blue, which can be matched against the given colour chart for a qualitative assessment of the exposure received. Two peaks in the absorption spectra located at 617 nm and 567 nm were found. When analysed with a common computer desktop scanner, the optical density response of the film to radiation exposure is non-linear but reproducible. The net OD of the film was 0.21 when exposed to 50cGyand 0.31 at 200 cGy exposure when irradiated with a 6 MV x-ray energy beam and analysed using a broad spectrum light source. These values reduced when exposed with kilovoltage x-rays with an approximate 30% reducing in sensitivity at 50 kVp. The film provides an adequate measurement and visually qualitative assessment of radiation exposure for levels in the range of 0–50 cGy.

Use of fluorescent-metal intensifying screens with RT-type films for X-ray radiography using pulse devices

International Nuclear Information System (INIS)

Morgovskij, L.Ya.; Khakim'yanov, R.R.

1985-01-01

A study was made on characteristics of combination of fluorescent-metal Kyokko SMP-308 (Japan) and RCF (Agfa-Gevert) screens with domestic X-ray RT-1, RT-2, RT-5 films. Pulse X-ray MIRA-3D and NORA devices at 200 kV voltage amplitude in X-ray tube were used as radiation source. Testing was conducted for steel samples of 5-40 mm thickness. Comparative exposures for various film combinations with fluorescent-metal screens, fluorescent VP-2 screens and lead foils of 27 μm thickness were determined at that. It is shown that fluorescent-metal screens can be successfully applied with domestic X-ray technical films. They enable to decrease exposure by one order with insignificant deterioration of sensitivity. It is important for testing of pipeline welds

Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

Science.gov (United States)

Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

2013-04-01

ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

Development of a Handmade Conductivity Measurement Device for a Thin-Film Semiconductor and Its Application to Polypyrrole

Science.gov (United States)

Seng, Set; Shinpei, Tomita; Yoshihiko, Inada; Masakazu, Kita

2014-01-01

The precise measurement of conductivity of a semiconductor film such as polypyrrole (Ppy) should be carried out by the four-point probe method; however, this is difficult for classroom application. This article describes the development of a new, convenient, handmade conductivity device from inexpensive materials that can measure the conductivity…

Intermetallic semiconducting films

CERN Document Server

Wieder, H H

1970-01-01

Intermetallic Semiconducting Films introduces the physics and technology of AшВv compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three t

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Science.gov (United States)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Functionalized Nano-Film Microchannel Plate: A Single High Aspect Ratio Device for High Resolution, Low Noise Astronomical Imaging, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed innovation is to apply proven nano-film technology to enable Microchannel plate (MCP) devices to be manufactured on a range of insulating substrates and...

Application of environmental Cs-137 techniques to problems of sediment redistribution Sungai Lui Representative Basin, Selangor, Malaysia

International Nuclear Information System (INIS)

Daud bin Mohamad; Moo Siew Pheng.

1980-10-01

Secondary standard dosimetry laboratory (UPDK), Nuclear Energy Unit, is well equipped with all necessary irradiation facilities and radiation measuring devices. The establishment of the Laboratory is partly aimed at giving calibration services for all kinds of dosemeters, personnel radiation monitoring by using film badges and TLD etc. In running the above services, safe and correct handling procedures of the mentioned facilities and devices are necessary. Furthermore, the accuracy of measurements is of great importance. This report outlined the procedures of handling the equipment, of performing experimental works as well as of getting the mentioned services from UPDK. This report is referred as a guide containing all the standard procedures aiming at a safety operation of radiation and electrical devices and finally to achieve a high degree of dosimetric accuracies. (author)

Preparation and Pb(II Adsorption Properties of Crosslinked Pectin-Carboxymethyl Chitosan Film

Directory of Open Access Journals (Sweden)

Budi Hastuti

2015-11-01

Full Text Available A modified pectin has been synthesized by reacting/combining -OH group among pectin and chitosan with BADGE (Bisphenol A diglycidyl ether crosslinker agent. The structure and morphology of the new material were characterized by Fourier transform infrared (FTIR spectroscopy, scanning electron microscopy (SEM and X-ray Diffraction (XRD analysis. Thermogravimetric studies showed an improvement in thermal characteristic. Adsorption experiments were performed in batch processes; sorption isotherms and kinetics were also studied. The Langmuir and Freundlich adsorption isotherm models were applied to describe the isotherms and isotherm constants for the adsorption of Pb(II ion onto adsorbent pectin-carboxymethyl chitosan-BADGE (pec-CMC-BADGE. The dynamic study showed that the sorption process followed the second-order kinetic equation. Result indicated also that Pb(II ion uptake could be well described by the Langmuir and Freundlich adsorption model of pec-CMC-BADGE and CMC with DG° of 25.3 and 23.1 kJ mol-1,respectively, while that of pectin followed Freundlich isotherm with DG° of 16.6 kJ mol-1.

Proximity credentials: A survey

International Nuclear Information System (INIS)

Wright, L.J.

1987-04-01

Credentials as a means of identifying individuals have traditionally been a photo badge and more recently, the coded credential. Another type of badge, the proximity credential, is making inroads in the personnel identification field. This badge can be read from a distance instead of being veiewed by a guard or inserted into a reading device. This report reviews proximity credentials, identifies the companies marketing or developing proximity credentials, and describes their respective credentials. 3 tabs

Data processing of personnel exposure in TLD and film systems

International Nuclear Information System (INIS)

Lerner, A.; Liav, N.; Eisen, Y.

1979-01-01

The program for the processing and storage of data on the personnel irradiation exposure in Israel is built on the data base of the Weizmann Institute of Science; it is a general program suitable for both TLD and film dosimetry. The TSO system helped bring up-to-date the data of the various collections in an interactive way. The introduction of the TLD dosemeters in the badge service required certain changes in the thinking line - this because the TLD being a personal dosemeter is returned into service after having been deciphered. This demands following up the dosemeter when the worker moves from unit to unit or after he had finished his work. The program takes into account the internal exposures,too and conforms to the new recommendation published in ICRP-26. (B.G.)

Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

KAUST Repository

Trinh, Cong

2012-07-10

We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz), forming a film composed of the metal-ligand complex. Fast and quantitative formation of the complex leads to marked changes in the morphology and optical properties of the film. X-ray diffraction studies show that the chemical annealing process converts amorphous ZnTPP films to crystalline ZnTPP•ligand films, whose porphryin planes lie nearly parallel to the substrate (average deviation is 8° for the ZnTPP•pz film). Organic solar cells were prepared with ZnTPP donor and C 60 acceptor layers. Devices were prepared with and without chemical annealing of the ZnTPP layer with a pyrazine ligand. The devices with chemically annealed ZnTPP donor layer show an increase in short-circuit current (J SC) and fill factor (FF) relative to analogous unannealed devices, presumably because of enhanced exciton diffusion length and improved charge conductivity. The open circuit voltages (V OC) of the chemically annealed devices are lower than their unannealed counterpart because of enhanced polaron pair recombination at the donor/acceptor heterojunction. A net improvement of 5-20% in efficiency has been achieved, after chemical annealing of ZnTPP films with pyrazine. © 2012 American Chemical Society.

P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

Energy Technology Data Exchange (ETDEWEB)

Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

2012-01-31

In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

Optimization of PEDOT films in ionic liquid supercapacitors: demonstration as a power source for polymer electrochromic devices.

Science.gov (United States)

Österholm, Anna M; Shen, D Eric; Dyer, Aubrey L; Reynolds, John R

2013-12-26

We report on the optimization of the capacitive behavior of poly(3,4-ethylenedioxythiophene) (PEDOT) films as polymeric electrodes in flexible, Type I electrochemical supercapacitors (ESCs) utilizing ionic liquid (IL) and organic gel electrolytes. The device performance was assessed based on figures of merit that are critical to evaluating the practical utility of electroactive polymer ESCs. PEDOT/IL devices were found to be highly stable over hundreds of thousands of cycles and could be reversibly charged/discharged at scan rates between 500 mV/s and 2 V/s depending on the polymer loading. Furthermore, these devices exhibit leakage currents and self-discharge rates that are comparable to state of the art electrochemical double-layer ESCs. Using an IL as device electrolyte allowed an extension of the voltage window of Type I ESCs by 60%, resulting in a 2.5-fold increase in the energy density obtained. The efficacies of tjese PEDOT ESCs were assessed by using them as a power source for a high-contrast and fast-switching electrochromic device, demonstrating their applicability in small organic electronic-based devices.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

Science.gov (United States)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Next-Generation Multifunctional Electrochromic Devices.

Science.gov (United States)

Cai, Guofa; Wang, Jiangxin; Lee, Pooi See

2016-08-16

The rational design and exploration of electrochromic devices will find a wide range of applications in smart windows for energy-efficient buildings, low-power displays, self-dimming rear mirrors for automobiles, electrochromic e-skins, and so on. Electrochromic devices generally consist of multilayer structures with transparent conductors, electrochromic films, ion conductors, and ion storage films. Synthetic strategies and new materials for electrochromic films and transparent conductors, comprehensive electrochemical kinetic analysis, and novel device design are areas of active study worldwide. These are believed to be the key factors that will help to significantly improve the electrochromic performance and extend their application areas. In this Account, we present our strategies to design and fabricate electrochromic devices with high performance and multifunctionality. We first describe the synthetic strategies, in which a porous tungsten oxide (WO3) film with nearly ideal optical modulation and fast switching was prepared by a pulsed electrochemical deposition method. Multiple strategies, such as sol-gel/inkjet printing methods, hydrothermal/inkjet printing methods, and a novel hybrid transparent conductor/electrochromic layer have been developed to prepare high-performance electrochromic films. We then summarize the recent advances in transparent conductors and ion conductor layers, which play critial roles in electrochromic devices. Benefiting from the developments of soft transparent conductive substrates, highly deformable electrochromic devices that are flexible, foldable, stretchable, and wearable have been achieved. These emerging devices have great potential in applications such as soft displays, electrochromic e-skins, deformable electrochromic films, and so on. We finally present a concept of multifunctional smart glass, which can change its color to dynamically adjust the daylight and solar heat input of the building or protect the users' privacy

Acidity-Controlled Conducting Polymer Films for Organic Thermoelectric Devices with Horizontal and Vertical Architectures

Science.gov (United States)

Lee, Woongki; Song, Myeonghun; Park, Soohyung; Nam, Sungho; Seo, Jooyeok; Kim, Hwajeong; Kim, Youngkyoo

2016-09-01

Organic thermoelectric devices (OTEDs) are recognized one of the next generation energy conversion platforms because of their huge potentials for securing electricity continuously from even tiny heat sources in our daily life. The advantage of OTEDs can be attributable to the design freedom in device shapes and the low-cost fabrication by employing solution coating processes at low temperatures. As one of the major OTE materials to date, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has been used, but no study has been yet carried out on its acidity control even though the acidic components in OTEDs can seriously affect the device performance upon operation. Here we demonstrate that the addition of aniline (a weak base) can control the acidity of PEDOT:PSS and enhance the performance of OTEDs. In particular, the vertical OTEDs with aniline-doped PEDOT:PSS films (active area = 1.0 cm2) could continuously generate electricity (0.06 nW) even at low temperatures (<38 °C) when they were mounted on a desk lamp (power = 24 W).

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

X ray sensitive area detection device

Science.gov (United States)

Carter, Daniel C. (Inventor); Witherow, William K. (Inventor); Pusey, Marc L. (Inventor); Yost, Vaughn H. (Inventor)

1990-01-01

A radiation sensitive area detection device is disclosed which comprises a phosphor-containing film capable of receiving and storing an image formed by a pattern of incoming x rays, UV, or other radiation falling on the film. The device is capable of fluorescing in response to stimulation by a light source in a manner directly proportional to the stored radiation pattern. The device includes: (1) a light source capable of projecting light or other appropriate electromagnetic wave on the film so as to cause it to fluoresce; (2) a means to focus the fluoresced light coming from the phosphor-containing film after light stimulation; and (3) at least one charged coupled detector or other detecting element capable of receiving and digitizing the pattern of fluoresced light coming from the phosphor-containing film. The device will be able to generate superior x ray images of high resolution from a crystal or other sample and will be particularly advantageous in that instantaneous near-real-time images of rapidly deteriorating samples can be obtained. Furthermore, the device can be made compact and sturdy, thus capable of carrying out x ray or other radiation imaging under a variety of conditions, including those experienced in space.

Ferroelectric ultrathin perovskite films

Science.gov (United States)

Rappe, Andrew M; Kolpak, Alexie Michelle

2013-12-10

Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

Personal Dosimetry for Radiation Workers Upgrading an Old Petroleum Oil Field

International Nuclear Information System (INIS)

Gomaa, M.A.M.

2011-01-01

Radiation protection consultations and services were carried out over the last 15 years in Egypt at several petroleum companies. Egypt issued its first NORM Regulation in 2000; this was subsequently modified in 2006. The main aim of the present work was to report dosimetric experience gained during the handling of contaminated equipment in the upgrading of an old oilfield. Optimization of radiation protection was carried out using lead blankets. Film badges were distributed to workers. Films were redistributed to personnel every few weeks. More than 700 film badges were distributed during the working period and workers' health surveillance was carried out, including complete blood analysis. For the 5 month period, individual doses were estimated. The average effective dose was less than 1 mSv. (author)

Thin films

International Nuclear Information System (INIS)

Strongin, M.; Miller, D.L.

1976-01-01

This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

Improved magnetic encoding device and method for making the same. [Patent application

Science.gov (United States)

Fox, R.J.

A magnetic encoding device and method for making the same are provided for use as magnetic storage media in identification control applications that give output signals from a reader that are of shorter duration and substantially greater magnitude than those of the prior art. Magnetic encoding elements are produced by uniformly bending wire or strip stock of a magnetic material longitudinally about a common radius to exceed the elastic limit of the material and subsequently mounting the material so that it is restrained in an unbent position on a substrate of nonmagnetic material. The elements are spot weld attached to a substrate to form a binary coded array of elements according to a desired binary code. The coded substrate may be enclosed in a plastic laminate structure. Such devices may be used for security badges, key cards, and the like and may have many other applications. 7 figures.

Exponential increase in the on-off ratio of conductance in organic memory devices by controlling the surface morphology of the devices

Science.gov (United States)

Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

2018-05-01

We have shown an exponential increase in the ratio of conductance in the on and off states of switching devices by controlling the surface morphology of the thin films for the device by depositing at different rotational speeds. The pinholes which are preferred topography on the surface at higher rotational speed give rise to higher on-off ratio of current from the devices fabricated at the speed. The lower rotational speed contributes to higher thickness of the film and hence no switching. For thicker films, the domain is formed due to phase segregation between the two components in the film, which also indicates that the film is far from thermal equilibrium. At higher speed, there is very little scope of segregation when the film is drying up. Hence, there are only few pinholes on the surface of the film which are shallow. So, the filamentary mechanism of switching in memory devices can be firmly established by varying the speed of thin film deposition which leads to phase segregation of the materials. Thus, the formation of filament can be regulated by controlling the thickness and the surface morphology.

Electrical characterization of organic thin film transistors and alternative device architectures

Science.gov (United States)

Newman, Christopher R.

In the last 10--15 years, organic semiconductors have evolved from experimental curiosities into viable alternatives for practical applications involving large-area and low-cost electronics such as display backplanes, electronic paper, radio frequency identification (RFID) tags, and solar cells. Many of the initially-stated goals in this field have been achieved; organic semconductors have demonstrated performance comparable to or greater than amorphous silicon (a-Si), the entrenched technology for most of the applications listed above. At present, the major obstacles remaining to commercialization of devices based on organic semiconductors involve material stability, processing considerations and optimization of the other device components (e.g. metal contacts and dielectric materials). Despite these technical achievements, significant gaps remain in our understanding of the underlying transport physics in these devices. This thesis summarizes experiments performed on organic field-effect transistors (OFETs) in an attempt to address some of these knowledge gaps. The FET, in addition to being a very useful device for practical applications (such as the driving elements in pixel backplanes), is also a very flexible architecture from an experimental standpoint. The presence of a capacitively-coupled gate electrode allows the investigation of transport physics as a function of carrier concentration. For devices in which non-idealities (i.e. carrier traps) largely dictate the observed characteristics, this is a very useful feature. Although practical OFETs are fabricated as conventional single-gate structures on an organic thin film (OTFTs), more exotic structures can often provide insights that standard OTFTs cannot. Specifically, single-crystal OFETs allow the investigation of carrier transport in the absence of grain boundaries, and double-gated OTFTs facilitate the investigation and comparison of properties across two discrete interfaces. One of the remaining

Leukemia among participants in military maneuvers at a nuclear bomb test

International Nuclear Information System (INIS)

Caldwell, G.G.; Kelley, D.B.; Heath, C.W.

1980-01-01

To test the possibility of a casual relationship between leukemia and exposure to nuclear radiation, the frequency of leukemia in personnel observing the detonation of a nuclear device called ''Smoky'' during August 1957 was determined. Of some 3224 men who witnessed the detonation, nine cases of leukemia were observed. They included four cases of acute myelocytic leukemia, three of chronic myelocytic leukemia, one of hairy cell lymphocyctic leukemia, and one of acute lymphocytic luekemia. These findings represent a significant increase over the expected leukemia incidence of 3.5 cases. Mean film-badge gamma radiation dose for the study group was 466.2 mrem

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2012-12-01

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Characterization of Safranine O based thin-film sandwich devices by analysing their electrical and photoelectrical behaviour

Energy Technology Data Exchange (ETDEWEB)

Sharma, G.D. [Jodhpur Univ. (India). Dept. of Physics; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur, Rajastan (India); Gupta, S.K. [Jodhpur Univ. (India). Dept. of Physics

1997-04-30

Safranine O (SAF), chemically known as 3,7-diamino-2,8-dimethyl-5-phenyl-phenazinium chloride, was employed in the form of thin film for the fabrication of In/SAF/ITO and Al/SAF/ITO (ITO is indium-tin oxide) sandwich devices. In these devices, at low voltages, the dark current in forward bias condition corresponds to a positive voltage at ITO, which varies exponentially with applied voltage. The square law dependence at higher voltage region indicates that conduction is limited by a discrete trapping level above the conduction band edge. The analysis of the 1/C{sup 2} versus V plots, for low frequencies, reveals that the SAF behaves as a semiconductor. At higher frequencies, the devices exhibit voltage-independent capacitances, which is explained in terms of the extremely slow kinetics of space charges. The photogeneration process in these devices is explained in terms of the exciton dissociation into free carriers at the Schottky barrier (Al/SAF and In/SAF interfaces). Various electrical and photovoltaic parameters are calculated and discussed in detail. (orig.)

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

Science.gov (United States)

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Commissioning a hobby cutting device for radiochromic film preparation.

Science.gov (United States)

Zolfaghari, Somayeh; Francis, Kirby E; Kairn, Tanya; Crowe, Scott B

2017-06-01

In addition to a high spatial resolution and well characterised dose response, one of the major advantages of radiochromic film as a dosimeter is that sheets of film can be cut into pieces suitable for use as calibration films, and for in vivo and phantom measurements. The cutting of film is typically done using scissors or a guillotine, and this process can be time-consuming, limited in precision, requires extensive handling and does not allow holes to be cut from the film without cutting from an existing edge. This study investigated the use of a Brother ScanNCut hobby cutting system for EBT3 film preparation. The optimal operating parameters (blade size, pressure, speed) that resulted in precise cuts with minimal delamination at cut edges were identified using test cutting patterns. These parameters were then used to cut a large film insert for a stereotactic head phantom for comparison against an insert cut with scissors. While the hobby cutting system caused a wider region of delamination at the film edge (1.8 mm) compared to scissors (1 mm), the hobby cutting system was found to be able to produce reproducible cuts more efficiently and more accurately than scissors. The use of the hobby cutting system is recommended for complex phantom inserts (containing sharp corners or holes for alignment rods) or in situations where large numbers of film pieces need to be prepared.

Effect of high-energy electron beam irradiation on the device characteristics of IGZO-based transparent thin film transistors

International Nuclear Information System (INIS)

Moon, Hye Ji; Oh, Hye Ran; Bae, Byung Seong; Yun, Eui Jung; Ryu, Min Ki; Cho, Kyoung Ik

2012-01-01

In this study, we investigated the effects of high-energy electron beam irradiation (HEEBI) on the device properties of indium-gallium-zinc-oxide (IGZO)-based transparent thin film transistors (TTFTs). The developed TTFTs had a top gate structure, which used IGZO and Al 2 O 3 films for the active layer and the gate dielectric, respectively. The developed TTFTs were treated with HEEBI in air at RT at an electron beam energy of 0.8 MeV and a dose of 1 x 10 14 electrons/cm 2 . Without the HEEBI treatment, the devices operated in depletion mode with a threshold voltage (V th ) of -11.25 V, a field-effect mobility (μ FE ) of 8.71 cm 2 /Vs, an on-off ratio (I on/off ) of 1.3 x 10 8 and a sub-threshold slope (SS) of 0.3 V/decade. A huge positive-shifted V th of -1 V, a very high μ FE of 420 cm 2 /Vs, a high I on/off of 6.1 x 10 8 , and a lower SS of 0.25 V/decade were achieved for the HEEBI-treated devices, suggesting that the device characteristics of the developed TTFTs were significantly improved by the HEEBI treatment. The best device characteristics, which include I on/off of 8.1 x 10 8 , SS of 0.25 V/decade, V th of +1 V, μ FE of 8.8 cm 2 /Vs, and operation in the enhancement mode without aging, were obtained for the samples that had been annealed after HEEBI treatment. On the basis of the experimental results, we believe that HEEBI treatment can be crucial to develop IGZO-based TFTs with high performance and long-term reliability.

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

Science.gov (United States)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

Directory of Open Access Journals (Sweden)

Hui-Ying Li

2015-02-01

Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

Transferred metal electrode films for large-area electronic devices

International Nuclear Information System (INIS)

Yang, Jin-Guo; Kam, Fong-Yu; Chua, Lay-Lay

2014-01-01

The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the dielectric. We show here that the self-release layer transfer method recently developed for high-quality graphene transfer is also capable of giving high-quality metal thin-film transfers to produce high-performance capacitors and OFETs with superior dielectric breakdown strength even for ultrathin polymer dielectric films. Dielectric breakdown strengths up to 5–6 MV cm −1 have been obtained for 50-nm thin films of polystyrene and a cyclic olefin copolymer TOPAS ® (Zeon). High-quality OFETs with sub-10 V operational voltages have been obtained this way using conventional polymer dielectrics and a high-mobility polymer semiconductor poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene-2,5-diyl]. The transferred metal films can make reliable contacts without damaging ultrathin polymer films, self-assembled monolayers and graphene, which is not otherwise possible from evaporated or sputtered metal films

Treatment verification system in radiotherapy using a digital portal imaging device. Comparison with screen/film systems

International Nuclear Information System (INIS)

Nakata, Manabu; Komai, Yoshinori; Okada, Takashi; Fukumoto, Satoshi; Chadani, Kazuma; Nohara, Hiroki; Kazusa, Chudou.

1994-01-01

A digital portal imaging (DPI) system for megavoltage photon beams was installed recently in our department. The purpose of this study is to evaluate the image quality of this system. We have analyzed the following properties of the system; relationship between measured dose-rate and pixel values of the DPI, spatial resolution, detectability of low-contrast objects and setup errors. The results were compared with those of conventional screen-film systems. As a result, the relationship between the measured dose-rate and the pixel value of the DPI was found to be linear in the dose-rate range between 100 and 400 cGy/min. Spatial resolution was 1.25 and 0.5 mm for the DPI and the screen-film systems, respectively. The slope of the contrast-detail curves differed between the DPI and the screen-film systems, the contrast thresholds were 0.6 and 0.3% for the DPI and the screen-film systems, respectively. The detectability of a setup error of 1 mm and 2 mm for the DPI was lower than that by the screen-film systems, although the difference was not very significant. In conclusion, the image quality of the DPI at present time is slightly inferior to the conventional screen-film systems. However, notable advantages of the DPI system are that any positional changes in patients during irradiation can be detected very quickly, and that quantitative analysis of the setup variation can be obtained. The image quality of the DPI will be improved as the technology regarding advances. Therefore, this verification system using the DPI device, is expected to be used for clinical radiation therapy in the future. (author)

Progress of Diamond-like Carbon Films

Directory of Open Access Journals (Sweden)

CHEN Qing-yun

2017-03-01

Full Text Available Diamond-like carbon(DLC films had many unique and outstanding properties such as high thermal conductivity, high hardness, excellent chemical inertness, low friction coefficients and wear coefficients. The properties and combinations were very promising for heat sink, micro-electromechanical devices, radiation hardening, biomedical devices, automotive industry and other technical applications, more research and a lot of attention were attracted in recent years. The research progress of diamond-like films and the nucleation mechanism of film were summarized, and application prospect of DLC films were demonstrated. The aim of this paper is to provide insights on the research trend of DLC films and the industry applications.

First report on synthesis of ZnFe_2O_4 thin film using successive ionic layer adsorption and reaction: Approach towards solid-state symmetric supercapacitor device

International Nuclear Information System (INIS)

Raut, Shrikant S.; Sankapal, Babasaheb R.

2016-01-01

Highlights: • First report on synthesis of ZnFe_2O_4 thin film using SILAR method. • ZnFe_2O_4 electrode yields the specific capacitance of 471 Fg"−"1 at a scan rate of 5 mV s"−"1 in 1 M NaOH aqueous solution. • Solid-state symmetric supercapacitor device based on ZnFe_2O_4 sandwiched in polyvinyl alcohol (PVA)–LiClO_4 gel electrolyte exhibits voltage windows of 1.0 V. • ZnFe_2O_4-SSS supercapacitor device shows good energy and power density with long cycle life. - Abstract: ZnFe_2O_4 thin film has been synthesized by a simple and low cost successive ionic layer adsorption and reaction (SILAR) method without the use of surfactant or template. The nanoplate composed of nanoparticles with porous surface morphology has been revealed which is beneficial towards supercapacitor application. Formed ZnFe_2O_4 thin film has been tested as an electrode material for supercapacitor through electrochemical analysis. First attempt for SILAR synthesized ZnFe_2O_4 thin film exhibited a specific capacitance of 471 Fg"−"1 at a scan rate of 5 mVs"−"1 in 1 M NaOH aqueous solution. Further, ZnFe_2O_4 solid-state symmetric (SSS) supercapacitor device demonstrated voltage window of 1.0 V with specific capacitance of 32 Fg"−"1, energy density of 4.47 Whkg"−"1 and power density of 277 Wkg"−"1 at 1 Ag"−"1 current density. Such high performance capacitive behavior indicates ZnFe_2O_4 thin film is promising and low cost electrode material towards energy storage devices for various portable electronic systems.

Radiation Protection Services Division: progress report for 1992-1993

International Nuclear Information System (INIS)

Massand, O.P.; Murthy, B.K.S.

1994-01-01

This report describes the work of the Radiation Protection Services Division during 1993, for implementation of radiation safety in all institutions in India using radiation sources in medical, industrial and research applications. It gives information about personnel monitoring using photographic film and TLD badges, neutron monitoring badges, advisory and licensing services, regulation, transport of radioactive materials and periodic protection survey. About 33 publications by the staff of the Division are also listed. (author). 4 tabs

PREFACE: INERA Workshop: Transition Metal Oxide Thin Films-functional Layers in "Smart windows" and Water Splitting Devices. Parallel session of the 18th International School on Condensed Matter Physics

Science.gov (United States)

2014-11-01

The Special issue presents the papers for the INERA Workshop entitled "Transition Metal Oxides as Functional Layers in Smart windows and Water Splitting Devices", which was held in Varna, St. Konstantin and Elena, Bulgaria, from the 4th-6th September 2014. The Workshop is organized within the context of the INERA "Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures", FP7 Project REGPOT 316309 program, European project of the Institute of Solid State Physics at the Bulgarian Academy of Sciences. There were 42 participants at the workshop, 16 from Sweden, Germany, Romania and Hungary, 11 invited lecturers, and 28 young participants. There were researchers present from prestigious European laboratories which are leaders in the field of transition metal oxide thin film technologies. The event contributed to training young researchers in innovative thin film technologies, as well as thin films characterization techniques. The topics of the Workshop cover the field of technology and investigation of thin oxide films as functional layers in "Smart windows" and "Water splitting" devices. The topics are related to the application of novel technologies for the preparation of transition metal oxide films and the modification of chromogenic properties towards the improvement of electrochromic and termochromic device parameters for possible industrial deployment. The Workshop addressed the following topics: Metal oxide films-functional layers in energy efficient devices; Photocatalysts and chemical sensing; Novel thin film technologies and applications; Methods of thin films characterizations; From the 37 abstracts sent, 21 manuscripts were written and later refereed. We appreciate the comments from all the referees, and we are grateful for their valuable contributions. Guest Editors: Assoc. Prof. Dr.Tatyana Ivanova Prof. DSc Kostadinka Gesheva Prof. DSc Hassan Chamatti Assoc. Prof. Dr. Georgi Popkirov Workshop Organizing Committee Prof

The Application of Minimally Invasive Devices with Nanostructured Surface Functionalization: Antisticking Behavior on Devices and Liver Tissue Interface in Rat

Directory of Open Access Journals (Sweden)

Li-Hsiang Lin

2015-01-01

Full Text Available This study investigated the thermal injury and adhesion property of a novel electrosurgery of liver using copper-doped diamond-like carbon (DLC-Cu surface treatment. It is necessary to reduce the thermal damage of surrounding tissues for clinical electrosurgeries. The surface morphologies of stainless steel (SS coated with DLC (DLC-Cu-SS films were characterized by scanning electron microscopy (SEM and transmission electron microscopy (TEM. Bionic liver models were reconstructed using magnetic resonance imaging (MRI to simulate electrosurgery. Cell cytotoxicity assays showed that the DLC-Cu thin film was nontoxic. The temperature of tissue decreased significantly with use of the electrosurgical device with nanostructured DLC-Cu films and increased with increasing thickness of the films. Thermography revealed that the surgical temperature in the DLC-Cu-SS electrosurgical device was significantly lower than that in the untreated device in the animal model. Moreover, compared to the SS electrosurgical device, the DLC-Cu-SS electrosurgical device caused a relatively small injury area and lateral thermal effect. The results indicate that the DLC-Cu-SS electrosurgical device decreases excessive thermal injury and ensures homogeneous temperature transformation in the tissues.

Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

Energy Technology Data Exchange (ETDEWEB)

Khan, I.A.; Hassan, M.; Hussain, T. [Department of Physics, GC University, 54000 Lahore (Pakistan); Ahmad, R., E-mail: ahriaz@gmail.com [Department of Physics, GC University, 54000 Lahore (Pakistan); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Rawat, R.S. [National Institute of Education, Nanyang Technological University, Singapore 637616 (Singapore)

2009-04-01

Zirconium aluminium oxynitride multiphase composite film is deposited on zirconium substrate using energetic nitrogen ions delivered from dense plasma Focus device. X-ray diffractometer (XRD) results show that five Focus shots are sufficient to initiate the nucleation of ZrN and Al{sub 2}O{sub 3} whereas 10 Focus shots are sufficient to initiate the nucleation of AlN. XRD results reveal that crystal growth of nitrides/oxides increases by increasing Focus shots (up to 30 Focus shots) and resputtering of the previously deposited film is taken place by further increase in Focus shots (40 Focus shots). Scanning electron microscopic (SEM) results indicate the uniform distribution of spherical grains ({approx}35 nm). A smoother surface is observed for 20 Focus shots at 0 deg. angular position. SEM results also show a net-type microstructure (thread like features) of the sample treated for 30 Focus shots whereas rough surface morphology is observed for 40 Focus shots. Energy dispersive spectroscopic profiles show the distribution of different elements present in the deposited composite films. A typical microhardness value of the deposited composite films is 5255 {+-} 10 MPa for 10 grams imposed load which is 3.3 times than the microhardness values of unexposed sample. The microhardness values of the exposed samples increases with increasing Focus shots (up to 30 Focus shots) and decreases for 40 Focus shots treatment due to resputtering of the previously deposited composite film. The microhardness values of the composite films decreases by increasing the sample's angular position.

Nanostructured transparent conducting oxide electrochromic device

Science.gov (United States)

Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2016-05-17

The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

Superconducting (YBa2Cu3O7-δ) and manganite (La0.7Sr0.3MnO3) oxide thin film based devices

International Nuclear Information System (INIS)

Mechin, Laurence

2005-01-01

This manuscript presents my research activity since my PhD thesis defended in 1993. I mainly worked on two types of oxides: YBCO et LSMO. I always kept in mind the development of devices as a whole, i.e. from the thin film to the device characterization. One part of my work has been devoted to the study of structural, electrical or magnetic properties of the thin films in order to optimize deposition conditions. Both YBCO and LSMO oxides present a perovskite structure and require similar deposition conditions (700 - 750 C in O 2 pressure). I used three deposition methods: pulsed laser deposition, on axis high pressure sputtering and RF off axis sputtering. (author)

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

Science.gov (United States)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices

International Nuclear Information System (INIS)

Liu Junfu; Nistorica, Corina; Gory, Igor; Skidmore, George; Mantiziba, Fadziso M.; Gnade, Bruce E.

2005-01-01

This work reports layer-by-layer deposition of zirconium oxide on a Si surface from aqueous solutions using the successive ionic layer adsorption and reaction technique. The process consists of repeated cycles of adsorption of zirconium precursors, water rinse, and hydrolysis. The film composition was determined by X-ray photoelectron spectroscopy. The film thickness was determined by Rutherford backscattering spectrometry, by measuring the Zr atom concentration. The average deposition rate from a 0.1 M Zr(SO 4 ) 2 solution on a SiO 2 /Si surface is 0.62 nm per cycle. Increasing the acidity of the zirconium precursor solution inhibits the deposition of the zirconium oxide film. Atomic force microscopy shows that the zirconium oxide film consists of nanoparticles of 10-50 nm in the lateral dimension. The surface roughness increased with increasing number of deposition cycles. Friction measurements made with a microelectromechanical system device reveal a reduction of 45% in the friction coefficient of zirconium oxide-coated surfaces vs. uncoated surfaces in air

Electrical characterization of MIS devices using PECVD SiN{sub x}:H films for application of silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Yoo, Jin-Su; Cho, Jun-Sik; Park, Joo-Hyung; Ahn, Seung-Kyu; Shin, Kee-Shik; Yoon, Kyung-Hoon [Korea Institute of Energy Research, Daejeon (Korea, Republic of); Yi, Jun-Sin [Sungkyunkwan University, Suwon (Korea, Republic of)

2012-07-15

The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiN{sub x}:H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiN{sub x}:H thin films were deposited by varying the gas ratio R (=NH{sub 3}/SiH{sub 4}+NH{sub 3}) and were annealed by rapid thermal processing (RTP). Metal-insulator- semiconductor (MIS) devices were fabricated using SiN{sub x}:H thin films as insulator layers and they were analyzed in the temperature range of 100 - 400 K by using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The annealed SiN{sub x}:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm x 156 mm) crystalline-silicon solar cells.

Transparent EuTiO3 films: a possible two-dimensional magneto-optical device

Science.gov (United States)

Bussmann-Holder, Annette; Roleder, Krystian; Stuhlhofer, Benjamin; Logvenov, Gennady; Lazar, Iwona; Soszyński, Andrzej; Koperski, Janusz; Simon, Arndt; Köhler, Jürgen

2017-01-01

The magneto-optical activity of high quality transparent thin films of insulating EuTiO3 (ETO) deposited on a thin SrTiO3 (STO) substrate, both being non-magnetic materials, are demonstrated to be a versatile tool for light modulation. The operating temperature is close to room temperature and allows for multiple device engineering. By using small magnetic fields birefringence of the samples can be switched off and on. Similarly, rotation of the sample in the field can modify its birefringence Δn. In addition, Δn can be increased by a factor of 4 in very modest fields with simultaneously enhancing the operating temperature by almost 100 K.

Physics and applications of electrochromic devices

Science.gov (United States)

Pawlicka, Agnieszka; Avellaneda, Cesar O.

2003-07-01

Solid state electrochromic devices (ECD) are of considerable technological and commercial interest because of their controllable transmission, absorption and/or reflectance. For instance, a major application of these devices is in smart windows that can regulate the solar gains of buildings and also in glare attenuation in automobile rear view mirrors. Other applications include solar cells, small and large area flat panel displays, satellite temperature control, food monitoring, and document authentication. A typical electrochromic device has a five-layer structure: GS/TC/EC/IC/IS/TC/GS, where GS is a glass substrate, TC is a transparent conductor, generally ITO (indium tin oxide) or FTO (fluorine tin oxide), EC is an electrochromic coating, IC is an ion conductor (solid or liquid electrolyte) and IS is an ion storage coating. Generally, the EC and IS layers are deposited separately on the TC coatings and then jointed with the IC and sealed. The EC and IS are thin films that can be deposited by sputtering, CVD, sol-gel precursors, etc. There are different kinds of organic, inorganic and organic-inorganic films that can be used to make electrochromic devices. Thin electrochromic films can be: WO3, Nb2O5, Nb2O5:Li+ or Nb2O5-TiO2 coatings, ions storage films: CeO2-TiO2, CeO2-ZrO2 or CeO2-TiO2-ZrO2 and electrolytes like Organically Modified Electrolytes (Ormolytes) or polymeric films also based on natural polymers like starch or cellulose. These last are very interesting due to their high ionic conductivity, high transparency and good mechanical properties. This paper describes construction and properties of different thin oxide and polymeric films and also shows the optical response of an all sol-gel electrochromic device with WO3/Ormolyte/CeO2-TiO2 configuration.

Radiation protection in the Czechoslovak nuclear power plants

International Nuclear Information System (INIS)

Singer, J.; Koc, J.; Hynek, J.; Trousil, J.

1987-01-01

The radiation monitoring by means of the central information system and of autonomous, portable and laboratory devices as well as a brief characteristic of the nuclear power plant radiation fields are described. The new personal dosimetric film and thermoluminescent badges and the method (including the block diagram) for personal dose evaluation are also introduced. Internal contamination monitoring is performed by means of a whole-body counter and excreta sample analysis. Monitoring the influence of effluents from nuclear power plants on environment in Czechoslovakia is based on significant radionuclide measurements in ventilation stacks and in the environment, also by means of the telemetric system, all in connection with mathematical models. (author)

Radioactive liquid waste processing device

International Nuclear Information System (INIS)

Murakami, Susumu; Kuroda, Noriko; Matsumoto, Hiroyo.

1991-01-01

The present device comprises a radioactive liquid wastes concentration means for circulating radioactive liquid wastes between each of the tank, a pump and a film evaporator thereby obtaining liquid concentrates and a distilled water recovery means for condensing steams separated by the film evaporator by means of a condenser. It further comprises a cyclizing means for circulating the resultant distilled water to the upstream after the concentration of the liquid concentrates exceeds a predetermined value or the quality of the distilled water reaches a predetermined level. Further, a film evaporator having hydrophilic and homogeneous films is used as a film evaporator. Then, the quality of the distilled water discharged from the present device to the downstream can always satisfy the predetermined conditions. Further, by conducting operation at high concentration while interrupting the supply of the processing liquids, high concentration up to the aimed concentration can be attained. Further, since the hydrophilic homogeneous films are used, carry over of the radioactive material accompanying the evaporation is eliminated to reduce the working ratio of the vacuum pump. (T.M.)

Fabrication of coplanar HF analog devices

International Nuclear Information System (INIS)

Schulz, G.; Kratz, H.

1993-01-01

A thin film technology has to be built up, which allows the reliable and reproducible production of such devices. This technology has to fulfill some general requirements and many specific ones due to the difference of the devices. The general requirements concern the suitability of the technology for industrial production. That means, that the production processes should be reliable, they should allow a high trough-put, and up-scaling should be possible. Processes as passivation or cryo-packaging of the devices belong to this group of requirements as well. The technology for fabrication of the devices splits up into three well distinguishable techniques: deposition of thin films, control of the quality of the deposited layers and patterning of the device structures and contacts. (orig.)

Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

Science.gov (United States)

Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

2015-01-01

Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

Biomolecular detection device

Science.gov (United States)

Huo, Qisheng [Albuquerque, NM; Liu, Jun [Albuquerque, NM

2008-10-21

A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

Modeling the instability behavior of thin film devices: Fermi Level Pinning

Science.gov (United States)

Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

2018-05-01

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

A Radiation Badge Survey for Family Members Living With Patients Treated With a 103Pd Permanent Breast Seed Implant

International Nuclear Information System (INIS)

Keller, Brian M.; Pignol, Jean-Philippe; Rakovitch, Eileen; Sankreacha, Raxa; O'Brien, Peter

2008-01-01

Purpose: Sixty-seven patients with early-stage breast cancer were treated in a Phase I/II clinical trial using a 103 Pd permanent breast seed implant as adjuvant radiotherapy after breast-conserving surgery. We report the dose received by family members living with these patients and compare measured doses with theoretical worst-case scenario estimates. Methods and Materials: Exposure-rate measurements were taken at 1 m from the patient by using a calibrated low-energy survey meter. Landauer (Landauer Inc., Glenwood, IL) Luxel badges, with sensitivity of 0.01 mSv, were given to family members to wear after the implantation. Badge readings for 33 spouses and 28 other family members were used to estimate effective doses, and these were compared with theory. Results: Average preimplantation planning target volume from computed tomography was 50.3 ml (range, 18.0-96.7 ml), and average preimplantation distance between the skin and the most anterior planning target volume margin was 0.57 cm. The average maximum exposure rate was measured to be 2.4 ± 1.1 mR/h, and average measured dose to a spouse was 0.99 ± 1.0 mSv. The calculated exposure rates and spousal doses using preimplantation computed tomography scan data overestimated those measured. Average measured family member dose (excluding spouses) was 0.20 ± 0.58 mSv. Conclusions: Based on measured and calculated spousal doses, a permanent breast seed implant using 103 Pd is safe for the public. However, it is recommended that extra precautions in the way of a breast patch be used when patients with an implant will be in the vicinity of toddlers or pregnant women

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

International Nuclear Information System (INIS)

Pu, Haifeng; Zhou, Qianfei; Yue, Lan; Zhang, Qun

2013-01-01

We reported the impact of oxygen plasma treatment on solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Plasma-treated devices showed higher mobility, larger on/off current ratio, but a monotonically increased SS with plasma treatment time as well. The phenomenon was mainly due to two components in oxygen plasma, atomic oxygen and O 2 + , according to the photoluminescence (PL) measurement. Atomic oxygen reacted with oxygen vacancies in channel layer resulting in an improved mobility, and O 2 + tends to aggregated at the surface acting as trapping states simultaneously. Our study suggests that moderate oxygen plasma treatment can be adopted to improve the device performance, while O 2 + should be eliminated to obtain good interfacial states.

Application of β plastic film thickness gauge in automatic production of agricultural film

International Nuclear Information System (INIS)

Liu Longzhi; Guo Juhao

1996-01-01

The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices.

Science.gov (United States)

Eslamian, Morteza; Zabihi, Fatemeh

2015-12-01

A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic "substrate vibration-assisted drop casting" (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few similar reports by others, confirm that imposing ultrasonic vibration on the substrate can simply convert the uncontrollable drop casting method into a controllable coating technique. Therefore, the SVADC may be used to fabricate an array of emerging thin-film solar cells, such as polymer, perovskite, and quantum-dot solar cells, as well as other small thin-film devices, in a roll-to-roll and automated fabrication process. The preliminary results demonstrate a ten-fold increase in electrical conductivity of PSS made by SVADC compared with the film made by conventional drop casting. Also, simple planar perovskite solar cells made here using SVADC show promising performance with an efficiency of over 3 % for a simple structure without performing process optimization or using expensive materials and treatments.

Anisotropic conducting films for electromagnetic radiation applications

Science.gov (United States)

Cavallo, Francesca; Lagally, Max G.; Rojas-Delgado, Richard

2015-06-16

Electronic devices for the generation of electromagnetic radiation are provided. Also provided are methods for using the devices to generate electromagnetic radiation. The radiation sources include an anisotropic electrically conducting thin film that is characterized by a periodically varying charge carrier mobility in the plane of the film. The periodic variation in carrier mobility gives rise to a spatially varying electric field, which produces electromagnetic radiation as charged particles pass through the film.

Scalable Production of Mechanically Robust Antireflection Film for Omnidirectional Enhanced Flexible Thin Film Solar Cells.

Science.gov (United States)

Wang, Min; Ma, Pengsha; Yin, Min; Lu, Linfeng; Lin, Yinyue; Chen, Xiaoyuan; Jia, Wei; Cao, Xinmin; Chang, Paichun; Li, Dongdong

2017-09-01

Antireflection (AR) at the interface between the air and incident window material is paramount to boost the performance of photovoltaic devices. 3D nanostructures have attracted tremendous interest to reduce reflection, while the structure is vulnerable to the harsh outdoor environment. Thus the AR film with improved mechanical property is desirable in an industrial application. Herein, a scalable production of flexible AR films is proposed with microsized structures by roll-to-roll imprinting process, which possesses hydrophobic property and much improved robustness. The AR films can be potentially used for a wide range of photovoltaic devices whether based on rigid or flexible substrates. As a demonstration, the AR films are integrated with commercial Si-based triple-junction thin film solar cells. The AR film works as an effective tool to control the light travel path and utilize the light inward more efficiently by exciting hybrid optical modes, which results in a broadband and omnidirectional enhanced performance.

Beta response of CaSO4:Dy based TLD badge and its angular dependence studies for personnel monitoring applications

International Nuclear Information System (INIS)

Kumar, Munish; Rakesh, R.B.; Sneha, C.; Ratna, P.; Bakshi, A.K.; Datta, D.

2016-01-01

In India, shallow/skin doses received by radiation workers from beta particles are measured using CaSO 4 :Dy based Teflon embedded TLD badge. The beta particles having maximum energy E max > 0.6 MeV - ≥ 3.54 MeV are monitored. The ratio of the response of discs under open and plastic regions (D Open/ D Perspex ) is used to estimate the energy of the beta source and to apply response correction factor. This is required as the disc dosimeters are thick and exhibit energy dependent response. Due to lack of comprehensive information regarding disc ratios and associated beta multiplication/response correction factors, present study was performed

Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

Science.gov (United States)

Hines, Jacqueline H. (Inventor)

2015-01-01

A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

Building-Integrated Solar Energy Devices based on Wavelength Selective Films

Science.gov (United States)

Ulavi, Tejas

A potentially attractive option for building integrated solar is to employ hybrid solar collectors which serve dual purposes, combining solar thermal technology with either thin film photovoltaics or daylighting. In this study, two hybrid concepts, a hybrid photovoltaic/thermal (PV/T) collector and a hybrid 'solar window', are presented and analyzed to evaluate technical performance. In both concepts, a wavelength selective film is coupled with a compound parabolic concentrator (CPC) to reflect and concentrate the infrared portion of the solar spectrum onto a tubular absorber. The visible portion of the spectrum is transmitted through the concentrator to either a thin film Cadmium Telluride (CdTe) solar panel for electricity generation or into the interior space for daylighting. Special attention is given to the design of the hybrid devices for aesthetic building integration. An adaptive concentrator design based on asymmetrical truncation of CPCs is presented for the hybrid solar window concept. The energetic and spectral split between the solar thermal module and the PV or daylighting module are functions of the optical properties of the wavelength selective film and the concentrator geometry, and are determined using a Monte Carlo Ray-Tracing (MCRT) model. Results obtained from the MCRT can be used in conjugation with meteorological data for specific applications to study the impact of CPC design parameters including the half-acceptance angle thetac, absorber diameter D and truncation on the annual thermal and PV/daylighting efficiencies. The hybrid PV/T system is analyzed for a rooftop application in Phoenix, AZ. Compared to a system of the same area with independent solar thermal and PV modules, the hybrid PV/T provides 20% more energy, annually. However, the increase in total delivered energy is due solely to the addition of the thermal module and is achieved at an expense of a decrease in the annual electrical efficiency from 8.8% to 5.8% due to shading by

Substrate structures for InP-based devices

International Nuclear Information System (INIS)

Wanlass, M.W.; Sheldon, P.

1990-01-01

A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device

Influence of iodine on the electrical and photoelectrical properties of zinc phthalocyanine thin film devices

Energy Technology Data Exchange (ETDEWEB)

Sharma, G.D. [Jodhpur Univ. (India). Dept. of Physics; Sangodkar, S.G. [Jodhpur Univ. (India). Dept. of Physics; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur (Raj.) (India)

1996-11-01

The electrical and photovoltaic properties of the zinc phthalocyanine (ZnPc) and I{sub 2} doped ZnPc thin films, sandwiched between indium tin oxide (ITO) and Al electrodes, were investigated. Doping with iodine brings adequate changes in the characteristics of the device. The devices constitute a metal-insulator-semiconductor (MIS) structure, in which depletion layer is formed in ZnPc, near Al-Al{sub 2}O{sub 3}/ZnPc. The depletion layer width and potential barrier height decrease with I{sub 2} doping. The charge transport phenomenon at higher voltage range appears to be space charge limited conduction (SCLC), in the presence of the discrete trapping level. The position of Fermi level shifts toward the valence band edge, which indicates that I{sub 2} doping increases the P-type conductivity. Various electrical and photovoltaic parameters were determined from the J-V and C-V analysis. The influence of the I{sub 2} doping has been discussed in detail. (orig.)

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Science.gov (United States)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices

Science.gov (United States)

Chen, Yu-Ze; Medina, Henry; Lin, Hung-Chiao; Tsai, Hung-Wei; Su, Teng-Yu; Chueh, Yu-Lun

2015-01-01

Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a

Composite films of oxidized multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as a contact electrode for transistor and inverter devices.

Science.gov (United States)

Yun, Dong-Jin; Rhee, Shi-Woo

2012-02-01

Composite films of multiwall carbon nanotube (MWNT)/poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were prepared by spin-coating a mixture solution. The effect of the MWNT loading and the MWNT oxidation, with acid solution or ultraviolet (UV)-ozone treatment, on the film properties such as surface roughness, work function, surface energy, optical transparency and conductivity were studied. Also pentacene thin film transistors and inverters were made with these composite films as a contact metal and the device characteristics were measured. The oxidation of MWNT reduced the conductivity of MWNT/PEDOT:PSS composite film but increased the work function and transparency. UV-ozone treated MWNT/PEDOT:PSS composite film showed higher conductivity (14000 Ω/□) and work function (4.9 eV) than acid-oxidized MWNT/PEDOT:PSS composite film and showed better performance as a source/drain electrode in organic thin film transistor (OTFT) than other types of MWNT/PEDOT:PSS composite films. Hole injection barrier of the UV-ozone treated MWNT/PEDOT:PSS composite film with pentacene was significantly lower than any other films because of the higher work function.

Interacting with a personal wearable device

NARCIS (Netherlands)

Haan, de G.; Wright, P.; Hollnagel, E.; Dekker, S.

2000-01-01

Comris is a research project that aims to create a wearable assistant, "the parrot", for conference and workshop visitors. A personal interest profile and an active badge system enable agents in a virtual information space to provide context-sensitive information about interesting persons and events

Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

KAUST Repository

Ho, Chih-Hsiang

2017-06-27

The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

KAUST Repository

Ho, Chih-Hsiang; Tsai, Dung-Sheng; Lu, Chao; Kim, Soo Youn; Mungan, Selin; Yang, Shih-Guo; Zhang, Yuanzhi; He, Jr-Hau

2017-01-01

The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

Production, Characterization And Tribological Properties Of Molybdenum Doped Diamond-like Carbon Films

OpenAIRE

Alp, Emre

2012-01-01

Thin films whose thickness is typically less than several microns are produced by the deposition of individual atoms on any substrate. Historically, thin films have been used for about half a century in producing instrument hard coatings, optical coatings, thin-film batteries, electronic devices, photovoltaic devices, memory devices and decorative parts. Thin film technology is still being developed by a technological advancement since it is a key factor in the twenty-first century developmen...

Influence of film dimensions on film droplet formation.

Science.gov (United States)

Holmgren, Helene; Ljungström, Evert

2012-02-01

Aerosol particles may be generated from rupturing liquid films through a droplet formation mechanism. The present work was undertaken with the aim to throw some light on the influence of film dimensions on droplet formation with possible consequences for exhaled breath aerosol formation. The film droplet formation process was mimicked by using a purpose-built device, where fluid films were spanned across holes of known diameters. As the films burst, droplets were formed and the number and size distributions of the resulting droplets were determined. No general relation could be found between hole diameter and the number of droplets generated per unit surface area of fluid film. Averaged over all film sizes, a higher surface tension yielded higher concentrations of droplets. Surface tension did not influence the resulting droplet diameter, but it was found that smaller films generated smaller droplets. This study shows that small fluid films generate droplets as efficiently as large films, and that droplets may well be generated from films with diameters below 1 mm. This has implications for the formation of film droplets from reopening of closed airways because human terminal bronchioles are of similar dimensions. Thus, the results provide support for the earlier proposed mechanism where reopening of closed airways is one origin of exhaled particles.

High-frequency Lamb wave device composed of MEMS structure using LiNbO3 thin film and air gap.

Science.gov (United States)

Kadota, Michio; Ogami, Takashi; Yamamoto, Kansho; Tochishita, Hikari; Negoro, Yasuhiro

2010-11-01

High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb wave, a very thin (less than 0.5 μm thick) single-crystal plate must be used. It is difficult to fabricate such a very thin single crystal plate. The authors have attempted to use a c-axis orientated epitaxial LiNbO(3) thin film deposited by a chemical vapor deposition system (CVD) instead of using a thin LiNbO(3) single crystal plate. Lamb wave resonators composed of a interdigital transducer (IDT)/the LiNbO(3) film/air gap/base substrate structure like micro-electromechanical system (MEMS) transducers were fabricated. These resonators have shown a high frequency of 4.5 and 6.3 GHz, which correspond to very high acoustic velocities of 14,000 and 12,500 m/s, respectively, have excellent characteristics such as a ratio of resonant and antiresonant impedance of 52 and 38 dB and a wide band of 7.2% and 3.7%, respectively, and do not have spurious responses caused by the 0th modes of shear horizontal (SH(0)) and symmetric (S(0)) modes.

Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis

properties of metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties, and thus also their integration in novel optoelectronic devices. In this work, MoOx thin-films with various different phases and compositions were prepared by direct-current reactive...... molecules DBP and C70 are also covered in this work. The devices show interesting characteristics for very thin layers of the as-deposited MoOx films, displaying similar device efficiencies as those of in situ prepared MoOx thin-films formed from thermal evaporation. For the annealed MoOx films......Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...

Elimination device for metal impurities

International Nuclear Information System (INIS)

Yanagisawa, Ko.

1982-01-01

Purpose: To enable reuse of adsorbing materials by eliminating Fe 3 O 4 films reduced with adsorbing performance by way of electrolytic polishing and then forming fresh membranes using high temperature steams. Constitution: An elimination device is provided to a coolant clean-up system of a reactor for eliminating impurities such as cobalt. The elimination device comprises adsorbing materials made of stainless steel tips or the likes having Fe 3 O 4 films. The adsorbing materials are regenerated by applying an electric current between grid-like cathode plates and anode plates to leach out the Fe 3 O 4 films, washing out the electrolytic solution by cleaning water and then applying steams at high temperature onto the adsorbing materials to thereby form fresh Fe 3 O 4 films again thereon. The regeneration of the adsorbing materials enables to eliminate Co 60 and the like in the primary coolant efficiently. (Moriyama, K.)

Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

Directory of Open Access Journals (Sweden)

Takayoshi Katase

2017-05-01

Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

SAFETY: STRICTER CONTROLS IN CONTROLLED AREAS IN THE PS

CERN Multimedia

G. Daems

2001-01-01

The PS accelerators will soon stop for several months. Work will take place in controlled areas in the PS and will involve many people who are not always aware of the risks associated with the work sites. To guarentee the safety of these workers, the following two measures will be applied: everyone working in a controlled zone - Linacs, PSB, and PS machines tunnels, and transfer lines - must wear, visibly, his CERN access card and his film badge. the CERN access card and the film badge will only be issued after following a basic safety course. Regular checks will be carried out during the shutdown. Anyone without these two items on their person will be obliged to leave the area immediately.

Piezoelectric Polymer Films for Application in Monitoring Devices

Science.gov (United States)

1977-02-01

pulse is also evident, as is the decay rate of the pressure, and what appears to be a pronounced " dicrotic notch ," which is asso- ciated with heart valve...investigation of factors responsible for this remark- able behavior of an organic polymer. Commercial PVF 2 homopolymer and copolymer films were oriented by... factors such as changes in elastic modulus of the film with temperature, depolarization processes at the higher temperature, and pyroelectric effects

Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

Energy Technology Data Exchange (ETDEWEB)

Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

2017-08-17

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

Directory of Open Access Journals (Sweden)

Xingpeng Liu

2017-12-01

Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

International Nuclear Information System (INIS)

Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; Nunes de Carvalho, C.

2012-01-01

The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95–80) % In:(5–20) % Sn alloys as evaporation sources and 19.5 mW/cm 2 and 58.6 mW/cm 2 as rf-power densities. The two most important macroscopic properties – visible transparency and electrical resistivity – are relatively independent of tin content (0–20%). Visible transmittance of about 75% and electrical resistivity around 5 × 10 −4 Ω·cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm 2 from a 5% Sn alloy or at 19.5 mW/cm 2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: ► InO x :Sn and InO x thin films were deposited at room temperature. ► Transparency and electrical resistivity are relatively independent of Sn content. ► Device quality material was obtained. ► The surface morphology homogeneity of the films varies with tin content.

Optical constant of thin gold films

DEFF Research Database (Denmark)

Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

2017-01-01

The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

OpenAIRE

龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

2008-01-01

"Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

Tunable multiband ferroelectric devices for reconfigurable RF-frontends

CERN Document Server

Zheng, Yuliang

2013-01-01

Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film deposition and multilayer circuitry. Next, it highlights the original classes of thin-film ferroelectric devices, including stratified metal-insulator-metal varactors with suppression of acoustic resonance and programmable bi-stable high frequency capacitors. At the end the book analyzes how the frontends can be reformed b...

Prototype solid-state electrochromic window devices

International Nuclear Information System (INIS)

Dao, L.H.; Nguyen, M.T.

1989-01-01

This paper discusses electrochromic smart windows which are prospective devices for the control of light transmission in response to the variation of brightness of the environment. The fabrication of electrochromic windows based on cathodically coloring transition metal oxides and anodically coloring conducting polymers are described. The device consists of gel or glassy polymer electrolytes sandwiches by a pair of transparent conducting glass coated respectively with a thin film of WO 3 or MoO 3 prepared by electrodeposition, and with a thin film of ploy(aniline) derivatives obtained by electropolymerization or solution casting. The electrochromic properties of the five-layer smart window devices are presented

Wearable strain sensors based on thin graphite films for human activity monitoring

Science.gov (United States)

Saito, Takanari; Kihara, Yusuke; Shirakashi, Jun-ichi

2017-12-01

Wearable health-monitoring devices have attracted increasing attention in disease diagnosis and health assessment. In many cases, such devices have been prepared by complicated multistep procedures which result in the waste of materials and require expensive facilities. In this study, we focused on pyrolytic graphite sheet (PGS), which is a low-cost, simple, and flexible material, used as wearable devices for monitoring human activity. We investigated wearable devices based on PGSs for the observation of elbow and finger motions. The thin graphite films were fabricated by cutting small films from PGSs. The wearable devices were then made from the thin graphite films assembled on a commercially available rubber glove. The human motions could be observed using the wearable devices. Therefore, these results suggested that the wearable devices based on thin graphite films may broaden their application in cost-effective wearable electronics for the observation of human activity.

Steps Towards Industrialization of Cu–III–VI2Thin‐Film Solar Cells:Linking Materials/Device Designs to Process Design For Non‐stoichiometric Photovoltaic Materials

Science.gov (United States)

Chang, Hsueh‐Hsin; Sharma, Poonam; Letha, Arya Jagadhamma; Shao, Lexi; Zhang, Yafei; Tseng, Bae‐Heng

2016-01-01

The concept of in‐line sputtering and selenization become industrial standard for Cu–III–VI2 solar cell fabrication, but still it's very difficult to control and predict the optical and electrical parameters, which are closely related to the chemical composition distribution of the thin film. The present review article addresses onto the material design, device design and process design using parameters closely related to the chemical compositions. Its variation leads to change in the Poisson equation, current equation, and continuity equation governing the device design. To make the device design much realistic and meaningful, we need to build a model that relates the opto‐electrical properties to the chemical composition. The material parameters as well as device structural parameters are loaded into the process simulation to give a complete set of process control parameters. The neutral defect concentrations of non‐stoichiometric CuMSe2 (M = In and Ga) have been calculated under the specific atomic chemical potential conditions using this methodology. The optical and electrical properties have also been investigated for the development of a full‐function analytical solar cell simulator. The future prospects regarding the development of copper–indium–gallium–selenide thin film solar cells have also been discussed. PMID:27840790

Steps Towards Industrialization of Cu-III-VI2Thin-Film Solar Cells:Linking Materials/Device Designs to Process Design For Non-stoichiometric Photovoltaic Materials.

Science.gov (United States)

Hwang, Huey-Liang; Chang, Hsueh-Hsin; Sharma, Poonam; Letha, Arya Jagadhamma; Shao, Lexi; Zhang, Yafei; Tseng, Bae-Heng

2016-10-01

The concept of in-line sputtering and selenization become industrial standard for Cu-III-VI 2 solar cell fabrication, but still it's very difficult to control and predict the optical and electrical parameters, which are closely related to the chemical composition distribution of the thin film. The present review article addresses onto the material design, device design and process design using parameters closely related to the chemical compositions. Its variation leads to change in the Poisson equation, current equation, and continuity equation governing the device design. To make the device design much realistic and meaningful, we need to build a model that relates the opto-electrical properties to the chemical composition. The material parameters as well as device structural parameters are loaded into the process simulation to give a complete set of process control parameters. The neutral defect concentrations of non-stoichiometric CuMSe 2 (M = In and Ga) have been calculated under the specific atomic chemical potential conditions using this methodology. The optical and electrical properties have also been investigated for the development of a full-function analytical solar cell simulator. The future prospects regarding the development of copper-indium-gallium-selenide thin film solar cells have also been discussed.

Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Current state of low energy EB devices and its application technology

International Nuclear Information System (INIS)

Kinoshita, Shinobu

2000-01-01

This paper introduced the current state of low energy type EB (electron beam) devices with an acceleration voltage of 300 kV or below and specific application examples. As for EB devices, it introduced the ultra-compact new EB device (microbeam LV), experimental devices, and the pilot/production devices which have been recently developed by the manufacturer to which the author belongs. As the applications of low energy EB devices, it specifically introduced curing, graft polymerization, crosslinking, and sterilization/disinfection with soft electrons: (1) examples of EB curing; antistatic agents in antibacterial/antifungal property imparting processing, hard coat, printing and topcoat, high gloss/pattern transfer processing, and metal vapor deposition film, (2) example of graft polymerization; barrier imparting films, and (3) examples of crosslinking; shrinking films/tubes and foamed sheets. (A.O.)

Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Gandla, Srinivas; Gollu, Sankara Rao; Sharma, Ramakant; Sarangi, Venkateshwarlu; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2015-10-12

In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

Sputtered highly oriented PZT thin films for MEMS applications

Science.gov (United States)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

Carbon Based Transistors and Nanoelectronic Devices

Science.gov (United States)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

Growth, characterization, and device development in monocrystalline diamond films

Science.gov (United States)

Davis, Robert F.

1991-12-01

The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

International Nuclear Information System (INIS)

Kim, E J; Kim, K A; Yoon, S M

2016-01-01

Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses. (paper)

Preparation and characterization of electroluminescent devices based on complexes of β-diketonates of Tb3+, Eu3+, Gd3+ ions with macrocyclic ligands and UO22+ films

International Nuclear Information System (INIS)

Gibelli, Edison Bessa

2010-01-01

Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR 3+ ) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth β-diketonate complexes (Tb 3+ , Eu 3+ and Gd 3+ ) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO 2 2+ . The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

Science.gov (United States)

Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

2018-01-01

This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Directory of Open Access Journals (Sweden)

Ana Luz Muñoz-Rosas

2018-03-01

Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

Horizontally-connected ZnO-graphene hybrid films for multifunctional devices

Energy Technology Data Exchange (ETDEWEB)

Lim, Yi Rang [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Song, Wooseok; Lee, Young Bum; Kim, Seong Ku; Han, Jin Kyu; Myung, Sung; Lee, Sun Sook; An, Ki-Seok [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); Choi, Chel-Jong [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lim, Jongsun, E-mail: jslim@krict.re.kr [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of)

2016-08-30

Highlights: • We designed horizontally-connected ZnO and graphene hybrid nanofilms with improved flexibility for multifunctional nanodevices including high performance TFTs. • The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. • The hybrid thin film transistors exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}. - Abstract: Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}.

Fabrication and Characterization of High-Sensitivity Underwater Acoustic Multimedia Communication Devices with Thick Composite PZT Films

Directory of Open Access Journals (Sweden)

Jeng-Cheng Liu

2017-01-01

Full Text Available This paper presents a high-sensitivity hydrophone fabricated with a Microelectromechanical Systems (MEMS process using epitaxial thin films grown on silicon wafers. The evaluated resonant frequency was calculated through finite-element analysis (FEA. The hydrophone was designed, fabricated, and characterized by different measurements performed in a water tank, by using a pulsed sound technique with a sensitivity of −190 dB ± 2 dB for frequencies in the range 50–500 Hz. These results indicate the high-performance miniaturized acoustic devices, which can impact a variety of technological applications.

Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

Science.gov (United States)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

Science.gov (United States)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

High-Performance Single-Crystalline Perovskite Thin-Film Photodetector