WorldWideScience

Sample records for devices film badge

  1. Detection of narcotics with an immunoassay film badge

    International Nuclear Information System (INIS)

    Lukens, H.R.

    1993-01-01

    Efficient personnel performance, a major requirement for a safe nuclear industry, is jeopardized where personnel use narcotics. However, detection of narcotics at nuclear plants is a challenge. The unique specificity and sensitivity of an immunoassay has been implemented in the form of a small, dry immunoassay film badge (IFB) for the detection of vapors emitted by narcotics. The device is suitable as an area monitor, and its characteristics are suitable for use as a breath monitor for the detection of drug use

  2. Measurement error in longitudinal film badge data

    International Nuclear Information System (INIS)

    Marsh, J.L.

    2002-04-01

    The classical measurement error model is that of a simple linear regression with unobservable variables. Information about the covariates is available only through error-prone measurements, usually with an additive structure. Ignoring errors has been shown to result in biased regression coefficients, reduced power of hypothesis tests and increased variability of parameter estimates. Radiation is known to be a causal factor for certain types of leukaemia. This link is mainly substantiated by the Atomic Bomb Survivor study, the Ankylosing Spondylitis Patients study, and studies of various other patients irradiated for therapeutic purposes. The carcinogenic relationship is believed to be a linear or quadratic function of dose but the risk estimates differ widely for the different studies. Previous cohort studies of the Sellafield workforce have used the cumulative annual exposure data for their risk estimates. The current 1:4 matched case-control study also uses the individual worker's film badge data, the majority of which has been unavailable in computerised form. The results from the 1:4 matched (on dates of birth and employment, sex and industrial status) case-control study are compared and contrasted with those for a 1:4 nested (within the worker cohort and matched on the same factors) case-control study using annual doses. The data consist of 186 cases and 744 controls from the work forces of four BNFL sites: Springfields, Sellafield, Capenhurst and Chapelcross. Initial logistic regressions turned up some surprising contradictory results which led to a re-sampling of Sellafield mortality controls without the date of employment matching factor. It is suggested that over matching is the cause of the contradictory results. Comparisons of the two measurements of radiation exposure suggest a strongly linear relationship with non-Normal errors. A method has been developed using the technique of Regression Calibration to deal with these in a case-control study context

  3. Radon-film-badges by solid radiators to complement track detector-based radon monitors

    International Nuclear Information System (INIS)

    Tommasino, L.; Tommasino, M.C.; Viola, P.

    2009-01-01

    Existing passive radon monitors, based on track detectors, present many shortcomings, such as a limited response sensitivity for one-week-indoor measurements and a limited response linearity for the assessment of large radon exposures indoors, in thermal spa, in caves, and in soil. Moreover, for in-soil measurements these monitors are too bulky and are often conducive to wrong results. For what concerns the radon-in-water measurements, they are just not suitable. A new generation of passive radon monitors is introduced in this paper, which are very similar to the compact badges used in neutron- and gamma-dosimetry and will be referred to as radon-film-badges. These film-badges are formed by thin-film radiators with suitable radon-sorption characteristics, facing track detectors. The key strategy adopted for these radiators is to exploit an equilibrium type of radon sorption in solids. Even though this new generation of passive monitors is at its infancy, it appears already clear that said monitors make it finally possible to overcome most of the shortcomings of existing passive radon monitors. These devices are uniquely simple and can be easily acquired by any existing radon service to complement their presently used passive radon monitors with little or no effort.

  4. The Dose Estimation Formula Of Photon Radiation To Film Badge Of Kodak Type 2

    International Nuclear Information System (INIS)

    Rohmah, Nur

    2000-01-01

    Study to determine the formula of dose estimation for photon radiation to film badge of Kodak type 2 has been carried out. The irradiation was done by irradiated film badge of Kodak type 2 using photon sources of X-rays machine, 137 Cs and 60 Co. By determining the apparent dose and also the sensitivity values each filters of the calibration curve and the weighting factors of energy dependence curve, the formula of the dose estimation for film badge of Kodak type 2 could be obtained, i.e. H 1cm 2.066761E-02N ADPI-2 + 1.953342N ADAI - 8.946254N ADCu + 24.80611N ADSn/pb

  5. Low-level dosimetry based on activation analysis of badge film, 1

    International Nuclear Information System (INIS)

    Morikawa, Kaoru; Yamashita, Kazuya; Inamoto, Kazuo; Maeda, Masayuki; Sato, Takashi; Ono, Koichi.

    1988-01-01

    Underexposed badge film contains a minor quantity of silver which corresponds to the low radiation dose even after completion of the photographic densitometry ; however, it cannot be detected with a photographic densitometer. We intended to clarify the minor silver content based on radioactivation analysis with thermal neutrons at KUR (Kyoto University Research Reactor). The natural silver consists of two stable nuclides, i.e., 107 Ag and 109 Ag. These can be activated with irradiation of thermal neutrons to two radionuclides, i.e., 108 Ag and 110 Ag. In this paper, through the activation analysis of an underexposed badge film, methods of measurements are shown regarding both 108 Ag produced by the 107 Ag (n, γ) reaction and 110 Ag by the 109 Ag (n, γ). After underexposed badge films were irradiated with thermal neutrons, some gamma-rays emitted from the radionuclides in the activated films were measured with a high pure Ge detector or a NaI (Tl) scintillation detector. The following results were obtained: (1) several elements such as silver, iodine, gold, antimony, manganese and copper were detected by activation analyses of films exposed to low level 60 Co gamma-rays, (2) the exposure vs 108 Ag or 110 Ag activity curve was linear in the lower dose range of 60 Co gamma-rays. These data indicate that low level radiation doses, which is indeterminable by ordinary photographic densitometry, can be estimated by activation analysis of silver atoms in badge films. (author)

  6. The response of film badge dosemeters to high energy photon radiation

    International Nuclear Information System (INIS)

    Playle, T.S.

    1988-12-01

    The sites of the earlier magnox reactor power stations at Berkeley and Bradwell in the United Kingdom are subject to 6 MeV photon radiation from the coolant gas. Since 1966 the Central Electricity Generating Board has included in its film badge personal dosimetry procedures an algorithm for applying a correction for over-response to high energy photon radiation. The correction is based on laboratory irradiations using a source of pure 6 MeV photon radiation. Recently, the opportunity arose to evaluate the response of the film badges at locations around the Berkeley reactors where spectrum-dependent dose equivalent rates had been measured. This report compares the response of the film badge in these characterised radiation environments with the response measured in the calibration laboratory. It is concluded that in the location where measurements were made, the high energy enhancement of measured dose was obscured by the effects of low energy scattered radiation, and it is considered that this will be the case for all practical situations on the power station site. There is therefore no advantage in using the 6 MeV correction factors for routine film badge dosimetry in these locations. (author)

  7. The use of film badges for personnel monitoring

    International Nuclear Information System (INIS)

    Ehrlich, M.

    1962-01-01

    Photographic film is fairly inexpensive and durable and as a result of irradiation its radiosensitive components undergo relatively permanent changes. With proper calibration the optical density of the development and fixed photographic film can be related to radiation exposure. Personnel monitoring with photographic film is the method of choice in many laboratories, and this manual gives guidelines for the use of photographic film in personnel dosimetry.

  8. User's guide for survey-meter- and film-badge-dosimetry data bases

    International Nuclear Information System (INIS)

    Phillips, W.G.; Sherman, S.; Young, R.

    1981-05-01

    This manual describes the data storage and retrieval system designed by Environmental Monitoring Systems Laboratory Las Vegas (EMSL-LV) for radiation exposure data recorded in offsite areas during and after nuclear weapons tests conducted at the Nevada Test Site in the 1950's and early 1960's. Referred to hereinafter as the EMSL-LV system, this system contains two distinct subsets of offsite radiological measurements collected during early nuclear atmospheric tests at the Nevada Test Site. The purpose of the manual is to present the methods for using the EMSL-LV system to examine all or any portion of either data subset. The two distinct subsets which comprise the EMSL-LV system are survey meter data and film badge dosimetry data. The survey meter data consist of readings obtained from portable radiation monitoring instruments used around the Nevada Test Site during the 1950's and early 1960's to measure radiation exposure rates resulting from the nuclear testing program. The dosimetry data consist of measurements of integrated radiation exposure made with film badge type dosimeters in areas surrounding the Nevada Test Site

  9. Measurement of the external doses at low and high exposures by Agfa personal monitoring film, FD-III-B badge

    International Nuclear Information System (INIS)

    Mihai, F.; Stochioiu, A.; Bercea, S.; Udup, E.; Tudor, I.

    2008-01-01

    Full text: A growing number of papers report occupational exposure monitoring by different dosemeter devices. Researches into improvement of the personal dosemeter systems are encouraged. Dose measurement and especially skin dose measurement, are therefore increasingly important. Methods and acceptable dosemeter are not clearly defined and differ from a dosimetry laboratory to other depending on their specifically work procedure and type of dosemeter utilized. Taking into account the characteristic of the work place (industry, research, medical application) dosemeter have to cover a large dose range. The dose assessment problems are manly in low doses range (under 0.2 mSv) and higher doses range. For example, typical for radiation oncology and nuclear accident dosimetry the dose ranges are on the order of 2-70 Gy and 0.1-5 Gy. This work presents the performance of the Agfa personal monitoring film, badge FD-III-B type used in the most of the occupational exposure monitoring from Romania. The FD-III-B dosimeter, manufactured in Romania, is used for monitoring personnel working in radioactive environment - the photodosimetric method is the one of the most reliable method presenting the advantage that the film may be considered as master probe over 30 year and may be utilized during litigation. The dosimeter contains metallic filters of Al, Cu, Pb with different thicknesses, a plastic filter and a open window. The badge FD-III-B is a class B dosimeter according to the dose range and an indices 3 dosimeter from energy range of the radiations in conformity with Romanian Standard in force. Film Agfa 'personal monitoring', tacked in this experiment, consists of a low speed film (D2) and a very sensitive film (D10) designed for recording X-ray, gamma and beta radiation over the doses range 0.1 mSv to 1 Sv. The experiments have been effectuated at different background optical density (base fog) of the films and at different sources of radiation: 13 :7Cs, 60 Co and 24 : 1 Am

  10. Film badge personnel monitoring and dose distribution of industrial and medical workers in the country (1994-1998)

    International Nuclear Information System (INIS)

    Mittal, Hariom; Pandey, R.L.; Massand, O.P.

    2001-03-01

    Personnel Monitoring Section, Bhabha Atomic Research Centre, Mumbai, is entrusted with the responsibility of providing a countrywide personnel monitoring to radiation workers using extemal radiation like X, beta, gamma and neutron. As per Radiation Protection Rules (RPR) of 1971 promulgated by the competent authority the personnel monitoring service is mandatory for all the workers working with radiation. The radiation exposures received by them should be within the limits stipulated by AERB. Nearly 43,000 radiation workers in about 3000 DAE and non DAE institutions using radiation and radioisotopes are monitored, using both the Film Badges and the Thermoluminescent dosimeters. This report presents various aspects of film dosimetry which was introduced more than four decades ago in the country and also analysis of doses received by the radiation workers in the five year block 1994-1998 covered by film badge service. (author)

  11. Occupational exposure from external radiation used in medical practices in Pakistan by film badge dosimetry

    International Nuclear Information System (INIS)

    Jabeen, A.; Munir, M.; Khalil, A.; Masood, M.; Akhter, P.

    2010-01-01

    Occupational exposure data of workers due to external sources of radiation in various medical practices such as nuclear medicine (NM), radiotherapy and diagnostic radiology (DR) in Pakistan were collected and analysed. Whole-body doses of workers were measured by film badge dosimetry technique during 2003-2007. Annual average effective dose in NM, radio-therapy and DR varied in the range of 1.39-1.80, 1.05-1.45 and 1.22-1.71 mSv, respectively, during 2003-2007. These values are quite low and well below the annual limit of 20 mSv averaged over a period of 5 consecutive years. Nobody received the radiation dose >50 mSv in any single year over a period of 5 consecutive years; therefore, no overexposure case has been detected. Decreasing trend of annual average dose values in aforementioned categories of work during 2003-2007 indicates the improvement of radiation protection status in medical field in Pakistan. (authors)

  12. Stratified dosimetric badge

    International Nuclear Information System (INIS)

    Cox, F.M.; Shoffner, B.M.; Chamberlain, J.D.; Shrader, E.F.

    1974-01-01

    That badge is of the type comprising a perforated rigid supporting member of nonluminescent matter and a film-like non-luminescent foil rendered pervious to light according to the code and mounted so as to be in register with holes in the supporting member. The badge is characterized in that it comprises a depressed portion in the upper surface of the supporting member, the lower/surface of which is correspondingly bulged, in that the peripherical edges of the supporting member extend vertically downwards beyond said depressed portion, in that one or several ports in each of which a dosimeter is fixed are provided in said bulged portion, and in the said film-like foil is fixed within the peripheral edges of the supporting member, so that the badge lower surface to which said film-like foil is fixed comprises a planar surface. That badge can be used in particular for checking radiations to which individuals have been exposed [fr

  13. Radiographic film digitizing devices

    International Nuclear Information System (INIS)

    McFee, W.H.

    1988-01-01

    Until recently, all film digitizing devices for use with teleradiology or picture archiving and communication systems used a video camera to capture an image of the radiograph for subsequent digitization. The development of film digitizers that use a laser beam to scan the film represents a significant advancement in digital technology, resulting in improved image quality compared with video scanners. This paper discusses differences in resolution, efficiency, reliability, and the cost between these two types of devices. The results of a modified receiver operating characteristic comparison study of a video scanner and a laser scanner manufactured by the same company are also discussed

  14. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  15. Digital Badges in Education

    Science.gov (United States)

    Gibson, David; Ostashewski, Nathaniel; Flintoff, Kim; Grant, Sheryl; Knight, Erin

    2015-01-01

    Digital badges provide new affordances for online educational activities and experiences. When used with points and leaderboards, a badge can become a gamification element allowing learners to compete with themselves or others, and to know how close they are to accomplishing a goal and acquiring its accompanying reputation. In this role, badges…

  16. Badge Office Process Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Haurykiewicz, John Paul [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dinehart, Timothy Grant [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Parker, Robert Young [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-05-12

    The purpose of this process analysis was to analyze the Badge Offices’ current processes from a systems perspective and consider ways of pursuing objectives set forth by SEC-PS, namely increased customer flow (throughput) and reduced customer wait times. Information for the analysis was gathered for the project primarily through Badge Office Subject Matter Experts (SMEs), and in-person observation of prevailing processes. Using the information gathered, a process simulation model was constructed to represent current operations and allow assessment of potential process changes relative to factors mentioned previously. The overall purpose of the analysis was to provide SEC-PS management with information and recommendations to serve as a basis for additional focused study and areas for potential process improvements in the future.

  17. X-ray spot film device

    International Nuclear Information System (INIS)

    1981-01-01

    Improvements are described in an X-ray spot film device which is used in conjunction with an X-ray table to make a selected number of radiographic exposures on a single film and to perform fluoroscopic examinations. To date, the spot film devices consist of two X-ray field defining masks, one of which is moved manually. The present device is more convenient to use and speeds up the procedure. (U.K.)

  18. Badges of modern slavery

    OpenAIRE

    Paz-Fuchs, Amir

    2016-01-01

    Notwithstanding the 19th century formal abolition of slavery as legal ownership of people, modern slavery and forced labour have not been consigned to the past. In fact, their existence is more widespread, and made more difficult to tackle due to the lack of formal, legal criteria. This article suggests that reference to the past, historical institutions reveals seven ‘badges of slavery’ that are helpful in identifying occurrences of modern slavery and forced labour. These are: humiliation, o...

  19. Are Badges Useful in Education?: It Depends upon the Type of Badge and Expertise of Learner

    Science.gov (United States)

    Abramovich, Samuel; Schunn, Christian; Higashi, Ross Mitsuo

    2013-01-01

    Educational Badges are touted as an alternative assessment that can increase learner motivation. We considered two distinct models for educational badges; merit badges and videogame achievements. To begin unpacking the relationship between badges and motivation, we conducted a study using badges within an intelligent-tutor system for teaching…

  20. Accuracy of effective dose estimation in personal dosimetry: a comparison between single-badge and double-badge methods and the MOSFET method.

    Science.gov (United States)

    Januzis, Natalie; Belley, Matthew D; Nguyen, Giao; Toncheva, Greta; Lowry, Carolyn; Miller, Michael J; Smith, Tony P; Yoshizumi, Terry T

    2014-05-01

    The purpose of this study was three-fold: (1) to measure the transmission properties of various lead shielding materials, (2) to benchmark the accuracy of commercial film badge readings, and (3) to compare the accuracy of effective dose (ED) conversion factors (CF) of the U.S. Nuclear Regulatory Commission methods to the MOSFET method. The transmission properties of lead aprons and the accuracy of film badges were studied using an ion chamber and monitor. ED was determined using an adult male anthropomorphic phantom that was loaded with 20 diagnostic MOSFET detectors and scanned with a whole body CT protocol at 80, 100, and 120 kVp. One commercial film badge was placed at the collar and one at the waist. Individual organ doses and waist badge readings were corrected for lead apron attenuation. ED was computed using ICRP 103 tissue weighting factors, and ED CFs were calculated by taking the ratio of ED and badge reading. The measured single badge CFs were 0.01 (±14.9%), 0.02 (±9.49%), and 0.04 (±15.7%) for 80, 100, and 120 kVp, respectively. Current regulatory ED CF for the single badge method is 0.3; for the double-badge system, they are 0.04 (collar) and 1.5 (under lead apron at the waist). The double-badge system provides a better coefficient for the collar at 0.04; however, exposure readings under the apron are usually negligible to zero. Based on these findings, the authors recommend the use of ED CF of 0.01 for the single badge system from 80 kVp (effective energy 50.4 keV) data.

  1. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  2. Badging people not on your payroll.

    Science.gov (United States)

    Hogan, Mary Alice

    2009-01-01

    A complex badging process to create a culture of safety in a medical center is described by the author. Badging is not only used to control access by employees, but non-employees--medical students, vendors, contractors, volunteers, etc.--are subjected to similar processing procedures before they can be issued badges.

  3. CJEP will offer open science badges.

    Science.gov (United States)

    Pexman, Penny M

    2017-03-01

    This editorial announces the decision of the Canadian Journal of Experimental Psychology (CJEP) to offer Open Science Framework (OSF) Badges. The Centre for Open Science provides tools to facilitate open science practices. These include the OSF badges. The badges acknowledge papers that meet standards for openness of data, methods, or research process. They are now described in the CJEP Submission Guidelines, and are provided in the editorial. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  4. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  5. MOOC Badging and the Learning Arc

    OpenAIRE

    Cross, Simon; Galley, Rebecca

    2012-01-01

    The first part of the post expands on some of our thinking behind the digital badging strategy used in the 2012 OLDS MOOC by using a pictorial representation to explain the place of the badges in the course. This is predicated on (a) the idea that a course, just like a novel, a movie or a video game, contains a broad central 'story arc' - a 'learning arc' or journey with a start (beginning of course) and an end, and (b) the idea that there are different types of badge that have different rela...

  6. Open badges for education: what are the implications at the intersection of open systems and badging?

    Directory of Open Access Journals (Sweden)

    June Ahn

    2014-08-01

    Full Text Available Badges have garnered great interest among scholars of digital media and learning. In addition, widespread initiatives such as Mozilla’s Open Badge Framework expand the potential of badging into the realm of open education. In this paper, we explicate the concept of open badges. We highlight some of the ways that researchers have examined badges as part of educational practice and also highlight the different definitions of open-ness that are employed in popular and scholarly thought. By considering badges from three different perspectives (motivation, pedagogy, and credential and the concept of openness from three different perspectives (production, access and appropriation we develop a framework to consider the tensions where these competing conceptions meet. This explication illuminates how the ideas of open and badges intersect, and clarifies situations where these concepts come into direct conflict or mutually enhance each other. Our analysis pinpoints and elucidates particular areas where research is needed to better understand the complex phenomenon of open badges, and also offers design considerations for developers, educators, and organizations that are actively involved in open badges.

  7. A new fully automated TLD badge reader

    International Nuclear Information System (INIS)

    Kannan, S.; Ratna, P.; Kulkarni, M.S.

    2003-01-01

    At present personnel monitoring in India is being carried out using a number of manual and semiautomatic TLD badge Readers and the BARC TL dosimeter badge designed during 1970. Of late the manual TLD badge readers are almost completely replaced by semiautomatic readers with a number of performance improvements like use of hot gas heating to reduce the readout time considerably. PC based design with storage of glow curve for every dosimeter, on-line dose computation and printout of dose reports, etc. However the semiautomatic system suffers from the lack of a machine readable ID code on the badge and the physical design of the dosimeter card not readily compatible for automation. This paper describes a fully automated TLD badge Reader developed in the RSS Division, using a new TLD badge with machine readable ID code. The new PC based reader has a built-in reader for reading the ID code, in the form of an array of holes, on the dosimeter card. The reader has a number of self-diagnostic features to ensure a high degree of reliability. (author)

  8. Automatic film loader for X-ray spot film device

    International Nuclear Information System (INIS)

    1975-01-01

    A light tight tunnel extends over the top of a diagnostic X-ray table. A film cassette is mounted for reciprocating in the tunnel between an X-ray exposure position and a position in which the cassette is unloaded or loaded with film automatically. Unexposed films are dispensed one at a time into the cassette from a feed magazine at one end of the tunnel. After exposure, the film is ejected from the cassette into a receiving magazine at the same end of the tunnel. (Auth.)

  9. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

    2007-01-01

    machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

  10. Developing a conceptual model for facilitating the issuing of digital badges in a resource constrained environment

    CSIR Research Space (South Africa)

    Salerno, S

    2015-09-01

    Full Text Available Gamification and digital badging are new concepts to the educational environment, where on completion of specific tasks, an individual can earn a badge or badges showing their achievement. Currently Mozilla Open Badges is the standard...

  11. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  12. A microcontroller based readout unit for a smart personnel monitoring TLD badge

    International Nuclear Information System (INIS)

    Gaonkar, U.P.; Kulkarni, M.S.; Kannan, S.

    1997-01-01

    An automated TLD personnel monitoring system is under development to cope up with the requirements of personnel monitoring of rapidly growing number of radiation workers. The core of the system is a smart TLD badge incorporating a memory device and a microcontroller based readout unit for reading the memory contents of the badge. The memory is used to store personnel data including the accumulated dose data. The reader unit has a serial RS 232C interface for connection to a PC for entering/modifying data in the memory. A password protected software has also been developed in C for entering/modifying the data in the single memory. 3 figs

  13. Passive Badge Assessment for Long-Term, Low-level Air Monitoring on Submarines: Acrolein Badge Validation

    National Research Council Canada - National Science Library

    Williams, Kimberly P; Rose-Pehrsson, Susan L; Kidwell, David A

    2006-01-01

    .... Passive badge monitors for acrolein detection were tested. Long-term sampling efficiency was evaluated for a 28-day period by comparing the response of the passive badge to an active tube sampling method...

  14. A comparison of charged coupled devices and film sensitivities

    International Nuclear Information System (INIS)

    Wallick, W.O.; Kenyon, R.G.; Lubatti, H.J.

    1977-01-01

    The response of a charged coupled device (Fairchild CCD-202) to a Ne light source is studied and compared to the Kodak SO-143 film commonly used for streamer chamber applications. It is found that the CCD-202 cooled to - 10 0 C is considerebly more sensitive than the film. The advantages of using a CCD camera system for streamer chamber and other applications is discussed. (Auth.)

  15. Using badges to motivate and engage students

    DEFF Research Database (Denmark)

    Christensen, Inger-Marie F.; Hansen, Pernille Stenkil

    The gap between educational institutions and students is widening. Many institutions maintain traditional methods and adopt new at a slow pace. Some educators and developers are looking to gamification to bridge the gap. This workshop will help participants’ explore the potential of badges...

  16. Opportunities and Challenges with Digital Open Badges

    Science.gov (United States)

    Farmer, Tadd; West, Richard E.

    2016-01-01

    With increasing interest in competency and outcome-based education, and the blending of formal and informal learning, there is increasing need for credentials to match these learning paradigms. In this article, the authors discuss the benefits, challenges, and potential future directions for open digital badges--one potential alternative…

  17. Optical compensation device for chest film radiography

    Science.gov (United States)

    Gould, Robert G.; Hasegawa, Bruce H.; DeForest, Sherman E.; Schmidt, Gregory W.; Hier, Richard G.

    1990-07-01

    Although chest radiography is the most commonly performed radiographic examination and one of the most valuable and cost-effective studies in medicine it suffers from relatively high error rates in both missing pathology and false positive interpretations. Detectability of lung nodules and other structures in underpenetrated regions of the chest film can be improved by both exposure and optical compensation but current compensation systems require major capital cost or a significant change in normal clinical practice. A new optical compensation system called the " Intelligent X-Ray Illuminator" (IXI) automatically and virtually instantaneously generates a patient-specific optical unsharp mask that is projected directly on a radiograph. When a radiograph is placed on the IXI which looks much like a conventional viewbox it acquires a low-resolution electronic image of this film from which the film transmission is derived. The transmission information is inverted and blurred in an image processor to form an unsharp mask which is fed into a spatial light modulator (SLM) placed between a light source and the radiograph. The SLM tailors the viewbox luminance by decreasing illumination to underexposed (i. e. transmissive) areas of the radiograph presenting the observer with an optically unsharp-masked image. The IXI uses the original radiograph and will allow it to be viewed on demand with conventional (uniform illumination. Potentially the IXI could introduce the known beneficial aspects of optical unsharp masking into radiology at low capital

  18. α-sealed transfer device and portable plastic film sealers

    International Nuclear Information System (INIS)

    Fu Zhujun; Shan Ruixia

    1990-04-01

    An α transfer device which can be operated remotely is presented. The device is able to perform sealed transfer of radioactive articles from a hot cell or shielded glove box to the outside and non-radioactive articles from the outside to a hot cell or shielded glove box by using bag sealing technology. The structure of the transfer device is simple. Its operation is safe and reliable. The sealing performance of the device is very good (for alpha). The use of this transfer device will greatly reduce α contamination of the building and creates a favourable condition for operating radioactive materials in an undivided area. The portable heat sealing device is also a necessary tool in bag sealing technology and α-sealed transfer. Two types of portable plastic film sealers have been developed. Their structure is simple. The operation of the portable plastic film sealers is easy. Their performance is also excellent. Both the α-sealed transfer device and portable plastic film sealers are very useful to the reprocessing plant of nuclear fuel

  19. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  20. Durable transparent carbon nanotube films for flexible device components

    International Nuclear Information System (INIS)

    Sierros, K.A.; Hecht, D.S.; Banerjee, D.A.; Morris, N.J.; Hu, L.; Irvin, G.C.; Lee, R.S.; Cairns, D.R.

    2010-01-01

    This paper describes a durable carbon nanotube (CNT) film for flexible devices and its mechanical properties. Films as thin as 10 nm thick have properties approaching those of existing electrodes based on indium tin oxide (ITO) but with significantly improved mechanical properties. In uniaxial tension, strains as high as 25% are required for permanent damage and at lower strains resistance changes are slight and consistent with elastic deformation of the individual CNTs. A simple model confirms that changes in electrical resistance are described by a Poisson's ratio of 0.22. These films are also durable to cyclic loading, and even at peak strains of 10% no significant damage occurs after 250 cycles. The scratch resistance is also high as measured by nanoscratch, and for a 50 μm tip a load of 140 mN is required to cause initial failure. This is more than 5 times higher than is required to cause cracking in ITO. The robustness of the transparent conductive coating leads to significant improvement in device performance. In touch screen devices fabricated using CNT no failure occurs after a million actuations while for devices based on ITO electrodes 400,000 cycles are needed to cause failure. These durable electrodes hold the key to developing robust, large-area, lightweight, optoelectronic devices such as lighting, displays, electronic-paper, and printable solar cells. Such devices could hold the key to producing inexpensive green energy, providing reliable solid-state lighting, and significantly reducing our dependence on paper.

  1. CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

    Science.gov (United States)

    Davidson, Bradley Darren

    This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

  2. Front and backside processed thin film electronic devices

    Science.gov (United States)

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  3. Sprayed films of europium complexes toward light conversion devices

    Energy Technology Data Exchange (ETDEWEB)

    Camacho, Sabrina A.; Aoki, Pedro H.B.; Constantino, Carlos J.L.; Pires, Ana Maria, E-mail: anapires@fct.unesp.br

    2014-09-15

    Rare-earth complexes have become subject of intensive research due to the high quantum efficiency of their emission, very narrow bands, and excellent fluorescence monochromaticity. The chemical design and characterization of Eu complexes based on β-diketone ligands hexafluoroacetylacetate (hfac) and dibenzoylmetanate (dbm) is reported here. K[Eu(dbm){sub 4}] and K[Eu(hfac){sub 4}] complexes were immobilized as thin films by using the spray technique, a promising methodology for practical applications. The latter provides not only a faster layer deposition but also larger coated areas compared to conventional methods, such as layer-by-layer (LbL) and Langmuir–Blodgett (LB). The growth of the sprayed films was monitored through microbalance (QCM) and ultraviolet–visible (UV–Vis) absorption spectroscopy, which reveal a higher mass and absorbance per deposited layer of K[Eu(dbm){sub 4}] film. Micro-Raman images display a more homogeneous spatial distribution of the K[Eu(dbm){sub 4}] complex throughout the film, when compared to K[Eu(hfac){sub 4}] film. At nanometer scale, atomic force microscopy (AFM) images indicate that the roughness of the K[Eu(hfac){sub 4}] film is approximately one order of magnitude higher than that for the K[Eu(dbm){sub 4}] film, which pattern is kept at micrometer scale according to micro-Raman measurements. The photoluminescence data show that the complexes remain as pure red emitters upon spray immobilization. Besides, the quantum efficiency for the sprayed films are found equivalent to the values achieved for the powders, highlighting the potential of the films for application in light conversion devices. - Highlights: • Rare earth complexes thin films based on β-diketone ligands. • Spraying procedures to fabricate layer-by-layer (LbL) luminescent thin films. • Chemical design of Eu complexes based on hfac and dbm β-diketones ligands immobilized as sprayed films. • Pure red emitters upon spray immobilization. • Sprayed

  4. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    Science.gov (United States)

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  5. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  6. Organic nonvolatile memory devices with charge trapping multilayer graphene film

    International Nuclear Information System (INIS)

    Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

    2012-01-01

    We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

  7. Engaging Undergraduate Students in a Co-Curricular Digital Badging Platform

    Science.gov (United States)

    Coleman, Jonathan D.

    2018-01-01

    Digital badging continues to garner attention in the educational community. What remains to be seen is how badging will interact with traditional curricular elements. While concerns have been raised about using badges as extrinsic motivators in coursework, there are alternate areas of application for digital badging. Badges may actually serve to…

  8. Gamification of Nursing Education With Digital Badges.

    Science.gov (United States)

    White, Meagan; Shellenbarger, Teresa

    Digital badges (DBs) serve as an innovative approach to gamifying nursing education by engaging socially connected, technologically savvy nursing students in learning. Because assessment and credentialing mechanisms are housed and managed online, DBs are designed as visible indicators of accomplishment and skill. This article describes important considerations for faculty when incorporating game-based pedagogies such as DB into nursing education and identifies potential pitfalls with DB use that faculty should consider.

  9. Organic Photovoltaic Devices Based on Oriented n-Type Molecular Films Deposited on Oriented Polythiophene Films.

    Science.gov (United States)

    Mizokuro, Toshiko; Tanigaki, Nobutaka; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

    2018-04-01

    The molecular orientation of π-conjugated molecules has been reported to significantly affect the performance of organic photovoltaic devices (OPVs) based on molecular films. Hence, the control of molecular orientation is a key issue toward the improvement of OPV performance. In this research, oriented thin films of an n-type molecule, 3,4,9,10-Perylenetetracarboxylic Bisbenzimida-zole (PTCBI), were formed by deposition on in-plane oriented polythiophene (PT) films. Orientation of the PTCBI films was evaluated by polarized UV-vis spectroscopy and 2D-Grazing incidence X-ray diffraction. Results indicated that PTCBI molecules on PT film exhibit nearly edge-on and in-plane orientation (with molecular long axis along the substrate), whereas PTCBI molecules without PT film exhibit neither. OPVs composed of PTCBI molecular film with and without PT were fabricated and evaluated for correlation of orientation with performance. The OPVs composed of PTCBI film with PT showed higher power conversion efficiency (PCE) than that of film without PT. The experiment indicated that in-plane orientation of PTCBI molecules absorbs incident light more efficiently, leading to increase in PCE.

  10. CuPc/C60 heterojunction thin film optoelectronic devices

    International Nuclear Information System (INIS)

    Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

    2010-01-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

  11. Thin-film luminescent concentrators for integrated devices: a cookbook.

    Science.gov (United States)

    Evenson, S A; Rawicz, A H

    1995-11-01

    A luminescent concentrator (LC) is a nonimaging optical device used for collecting light energy. As a result of its unique properties, a LC also offers the possibility of separating different portions of the spectrum and concentrating them at the same time. Hence, LC's can be applied to a whole range of problems requiring the collection, manipulation, and distribution or measurement of light. Further-more, as described in our previous research, thin-film LC elements can be deposited directly over sensor and processing electronics in the form of integrated LC devices. As an aid to further research, the materials and technology required to fabricate these thin-film LC elements through the use of an ultraviolet-curable photopolymer are documented in detail.

  12. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  13. Film Sensor Device Fabricated by a Piezoelectric Poly(L-lactic acid) Film

    Science.gov (United States)

    Ando, Masamichi; Kawamura, Hideki; Kageyama, Keisuke; Tajitsu, Yoshiro

    2012-09-01

    Synthetic piezoelectric polymer films produced from petroleum feedstock have long been used as thin-film sensors and actuators. However, the fossil fuel requirements for synthetic polymer production and carbon dioxide emission from its combustion have raised concern about the environmental impact of its continued use. Eco-friendly biomass polymers, such as poly(L-lactic acid) (PLLA), are made from plant-based (vegetable starch) plastics and, thus, have a much smaller carbon footprint. Additionally, PLLA does not exhibit pyroelectricity or unnecessary poling. This suggests the usefulness of PLLA films for the human-machine interface (HMI). As an example of a new HMI, we have produced a TV remote control using a PLLA film. The intuitive operation provided by this PLLA device suggests that it is useful for the elderly or handicapped.

  14. Digital Badges and Library Instructional Programs: Academic Library Case Study

    Science.gov (United States)

    Rodgers, Andrea Reed; Puterbaugh, Mark

    2017-01-01

    This case study describes the planning, implementation, and migration process of Eastern University Library's information literacy digital badge. Prior to implementing a badging program, information literacy sessions were informally embedded in first-year college writing courses as a "one-shot" presentation. Spurred on by accreditation…

  15. Employer Perceptions of Critical Information Literacy Skills and Digital Badges

    Science.gov (United States)

    Raish, Victoria; Rimland, Emily

    2016-01-01

    Digital badges are an educational innovation used to measure learning of specific skills, such as information literacy. However, few studies have quantitatively surveyed employers for their perceptions about information literacy skills or digital badges. An online survey was developed and sent to employers to gauge perceptions of information…

  16. Characterisation and application of WO3 films for electrochromic devices

    Science.gov (United States)

    Stapinski, Thomas; Marszalek, Konstanty; Swatowska, Barbara; Stanco, Agnieszka

    2013-07-01

    Electrochromic system is the one of the most popular devices using color memory effect under the influence of an applied voltage. The electrochromic system was produced based on the thin WO3 electrochromic films. Films were prepared by RF magnetron sputtering from tungsten targets in a reactive Ar+O2 gas atmosphere of various Ar/O2 ratios. The technological gas mixture pressure was 3 Pa and process temperature 30°C. Structural and optical properties of WO3 films were investigated for as-deposited and heat treated samples at temperature range from 350°C to 450°C in air. The material revealed the dependence of properties on preparation conditions and on post-deposition heat treatment. Main parameters of thin WO3 films: thickness d, refractive index n, extinction coefficient k and energy gap Eg were determined and optimized for application in electrochromic system. The main components of the system were glass plate with transparent conducting oxides, electrolyte, and glass plate with transparent conducting oxides and WO3 layer. The optical properties of the system were investigated when a voltage was applied across it. The electrochromic cell revealed the controllable transmittance depended on the operation voltage.

  17. Copper Antimony Chalcogenide Thin Film PV Device Development

    Energy Technology Data Exchange (ETDEWEB)

    Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

    2015-06-14

    Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

  18. Thin aligned organic polymer films for liquid crystal devices

    International Nuclear Information System (INIS)

    Foster, Kathryn Ellen

    1997-01-01

    This project was designed to investigate the possibility of producing alignment layers for liquid crystal devices by cross-linking thin films containing anisotropic polymer bound chromophores via irradiation with polarised ultraviolet light. Photocross-linkable polymers find use in microelectronics, liquid crystal displays, printing and UV curable lacquers and inks; so there is an increasing incentive for the development of new varieties of photopolymers in general. The synthesis and characterisation of two new photopolymers that are suitable as potential alignment layers for liquid crystal devices are reported in this thesis. The first polymer contains the anthracene chromophore attached via a spacer unit to a methacrylate backbone and the second used a similarly attached aryl azide group. Copolymers of the new monomers with methyl methacrylate were investigated to establish reactivity ratios in order to understand composition drift during polymerisation. (author)

  19. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.; Fan, Shanhui

    2010-01-01

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

  20. A high-efficiency solution-deposited thin-film photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

    2008-10-02

    High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  1. Nobels Nobels laureates photographed by Peter Badge

    CERN Document Server

    2008-01-01

    A unique photographic record of all living Nobel laureates. In this handsome coffee-table book, photographer Peter Badge captures the likeness of every living Nobel laureate in a lasting black-and-white image -- more than 300 striking portraits in all. Brief biographical sketches accompanying the large-scale photographs pay homage to each laureate's singular contribution to science, literature or world peace. Bringing readers face-to-face with Nelson Mandela, Jimmy Carter, the Dalai Lama, James Watson, Gabriel García Márquez, Toni Morrison, Rita Levi-Montalcini, Linda Buck, and Paul Samuelson among many others, NOBELS offers an intimate and compelling look at well-known honorees as well as lesser-known recipients. A fascinating word/image tableau.

  2. Ultrathin TaOx film based photovoltaic device

    International Nuclear Information System (INIS)

    Tyagi, Pawan

    2011-01-01

    Application of the economical metal oxide thin-film photovoltaic devices is hindered by the poor energy efficiency. This paper investigates the photovoltaic effect with an ultrathin tantalum oxide (TaOx) tunnel barrier, formed by the plasma oxidation of a pre-deposited tantalum (Ta) film. These ∼ 3 nm TaOx tunnel barriers showed approximately 160 mV open circuit voltage and 3-5% energy efficiency, for varying light intensity. The ultrathin TaOx (∼ 3 nm) could absorb approximately 12% of the incident light radiation in 400-1000 nm wavelength range; this strong light absorbing capability was found to be associated with the dramatically large extinction coefficient. Spectroscopic ellipsometry revealed that the extinction coefficient of 3 nm TaOx was ∼ 0.2, two orders higher than that of tantalum penta oxide (Ta 2 O 5 ). Interestingly, refractive index of this 3 nm thick TaOx was comparable with that of stochiometeric Ta 2 O 5 . However, heating and prolonged high-intensity light exposure deteriorated the photovoltaic effect in TaOx junctions. This study provides the basis to explore the photovoltaic effect in a highly economical and easily processable ultrathin metal oxide tunnel barrier or analogous systems.

  3. Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

    NARCIS (Netherlands)

    2005-01-01

    A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

  4. Polymer−metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, S.; Gravesteijn, Dirk J; Soccol, D.; Kapteijn, F.; Sudhölter, E.J.R.; Gascon, J.; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer. Sensing

  5. Polymer-metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, Sumit; Soccol, Dimitri; Gravesteijn, Dirk J.; Kapteijn, Freek; Sudhölter, E.J.R.; Gascon, Jorge; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-
    MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid
    polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer.

  6. Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems

    NARCIS (Netherlands)

    Klee, M.; Beelen, D.; Keurl, W.; Kiewitt, R.; Kumar, B.; Mauczok, R.; Reimann, K.; Renders, Ch.; Roest, A.; Roozeboom, F.; Steeneken, P.G.; Tiggelman, M.P.J.; Vanhelmont, F.; Wunnicke, O.; Lok, P.; Neumann, K.; Fraser, J.; Schmitz, G.

    2007-01-01

    Dielectric, ferroelectric and piezoelectric thin films are getting more and more attention for next generation mobile communication and medical systems. Thin film technologies based on dielectric, ferroelectric and piezoelectric thin films enable System-in-Package (SiP) devices, resulting in optimal

  7. Method for the manufacture of a thin film electrochemical energy source and device

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method for the manuf. of a thin film electrochem. energy source. The invention also relates to a thin film electrochem. energy source. The invention also relates to an elec. device comprising such a thin film electrochem. energy source. The invention enables a more rapid

  8. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    International Nuclear Information System (INIS)

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

  9. Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

    Science.gov (United States)

    An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

    2015-02-01

    Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

  10. Magnetron sputtering fabrication and photoelectric properties of WSe2 film solar cell device

    Science.gov (United States)

    Mao, Xu; Zou, Jianpeng; Li, Hongchao; Song, Zhengqi; He, Siru

    2018-06-01

    Tungsten diselenide (WSe2) films with different growing orientations exhibit diverse photoelectric properties. The WSe2 film with C-axis⊥substrate texture has been prepared and applied to thin-film solar cells. W nanofilms with a thickness of 270 nm were deposited onto the Mo bottom electrode and then heat-treated in selenium vapor to synthesize WSe2 films with a thickness of 1 μm. ZnO films were deposited onto WSe2 films to form a P-N junction and ITO films were deposited subsequently as the conductive layer. X-ray diffractometry, scanning electron microscopy and UV-vis-NIR spectro-analysis instrument were employed to analyze the phase composition, optical absorptivity and micromorphology of WSe2 films and the WSe2 solar cell device. WSe2 films exhibit excellent photoelectric performance with an optical absorption coefficient greater than 105 cm-1 across the visible spectrum. The calculated direct and indirect band gap of the WSe2 films is 1.48 eV and 1.25 eV, respectively. With the application of standard glass/Mo/WSe2/ZnO/ITO/Ag device structure, the open-circuit voltage of the battery device is 82 mV. The short-circuit current density is 2.98 mA/cm2 and the filling factor is 0.32. The photoelectric conversion efficiency of the WSe2 film solar cell device is 0.79%.

  11. Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

    2017-04-01

    We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

  12. A device for checking the speeds and quality of X-ray films and efficiency of film processors

    International Nuclear Information System (INIS)

    Crooks, H.E.

    1980-01-01

    In order to carry out quality assurance tests of X-ray films, screens and processors, a standard exposure source of utmost reliability is desirable. The performance of apparatus containing yellow-green light emitting radioactive tritium activated phosphor, known as Betalight, is described. Over a period of 2 1/2 years, variations in film speeds up to +- 20% from nominally the same types of film have been observed. Additionally, substandard developer has been easily identified with the use of this device. The device is cheap and easy to manufacture, accurate and simple to use. (U.K.)

  13. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    Science.gov (United States)

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

  14. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  15. Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

    Science.gov (United States)

    Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir; Tischler, Jonathan R.; Tisdale, William A.; Walker, Brian J.

    2017-12-12

    Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

  16. Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

    Science.gov (United States)

    Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

    We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

  17. Growth, characterization, and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, Robert F.

    1991-12-01

    The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

  18. Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Ziyang Hu

    2011-01-01

    Full Text Available Indium-doped zinc oxide (IZO thin films were prepared by low-cost ultrasonic spray pyrolysis (USP. Both a low resistivity (3.13×10−3 Ω cm and an average direct transmittance (400∼1500 nm about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV devices based on poly(3-hexylthiophene and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

  19. Adding Badging to a Marketing Simulation to Increase Motivation to Learn

    Science.gov (United States)

    Saxton, M. Kim

    2015-01-01

    Badging has become a popular tool for obtaining social recognition for personal accomplishments. This innovation describes a way to add badging to a marketing simulation to increase student motivation to achieve the simulation's goals. Assessments indicate that badging both motivates students to perform better and helps explain students' perceived…

  20. Study on film resistivity of Energy Conversion Components for MEMS Initiating Explosive Device

    Science.gov (United States)

    Ren, Wei; Zhang, Bin; Zhao, Yulong; Chu, Enyi; Yin, Ming; Li, Hui; Wang, Kexuan

    2018-03-01

    Resistivity of Plane-film Energy Conversion Components is a key parameter to influence its resistance and explosive performance, and also it has important relations with the preparation of thin film technology, scale, structure and etc. In order to improve the design of Energy Conversion Components for MEMS Initiating Explosive Device, and reduce the design deviation of Energy Conversion Components in microscale, guarantee the design resistance and ignition performance of MEMS Initiating Explosive Device, this paper theoretically analyzed the influence factors of film resistivity in microscale, through the preparation of Al film and Ni-Cr film at different thickness with micro/nano, then obtain the film resistivity parameter of the typical metal under different thickness, and reveals the effect rule of the scale to the resistivity in microscale, at the same time we obtain the corresponding inflection point data.

  1. Commissioning a hobby cutting device for radiochromic film preparation.

    Science.gov (United States)

    Zolfaghari, Somayeh; Francis, Kirby E; Kairn, Tanya; Crowe, Scott B

    2017-06-01

    In addition to a high spatial resolution and well characterised dose response, one of the major advantages of radiochromic film as a dosimeter is that sheets of film can be cut into pieces suitable for use as calibration films, and for in vivo and phantom measurements. The cutting of film is typically done using scissors or a guillotine, and this process can be time-consuming, limited in precision, requires extensive handling and does not allow holes to be cut from the film without cutting from an existing edge. This study investigated the use of a Brother ScanNCut hobby cutting system for EBT3 film preparation. The optimal operating parameters (blade size, pressure, speed) that resulted in precise cuts with minimal delamination at cut edges were identified using test cutting patterns. These parameters were then used to cut a large film insert for a stereotactic head phantom for comparison against an insert cut with scissors. While the hobby cutting system caused a wider region of delamination at the film edge (1.8 mm) compared to scissors (1 mm), the hobby cutting system was found to be able to produce reproducible cuts more efficiently and more accurately than scissors. The use of the hobby cutting system is recommended for complex phantom inserts (containing sharp corners or holes for alignment rods) or in situations where large numbers of film pieces need to be prepared.

  2. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  3. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  4. Enhancement of photovoltaic characteristics of nanocrystalline 2,3-naphthalocyanine thin film-based organic devices

    International Nuclear Information System (INIS)

    Farag, A.A.M.; Osiris, W.G.; Ammar, A.H.

    2012-01-01

    Graphical abstract: Scanning electron microscopy (SEM) image of NPC films: (a) cross section view, (b) surface morphology of the film at 300 K, (c) surface morphology of the annealed film at 350 K, (d) surface morphology of the annealed film at 400 K, (e) surface morphology of the annealed film at 450 K, and (f) surface morphology of the annealed film at 500 K. Highlights: ► The absorption edge shifts to the lower energy for the annealed NPC film. ► The device of Au/NPC/ITO exhibit rectifying characteristics. ► The devices show improvement in photovoltaic parameters. ► The power conversion efficiency of the devices show enhancement under annealing. - Abstract: In this work, nanocrystalline thin films of 2,3-naphthalocyanine (NPC) were successfully deposited by a thermal evaporation technique at room temperature under high vacuum (∼10 −4 Pa). The crystal structure and surface morphology were measured using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. A preferred orientation along the (0 0 1) direction was observed in all the studied films and the average crystallite size was calculated. Scanning electron miscroscopy (SEM) images of NPC films at different thermal treatment indicated significant changes on surface level patterns and gave clear evidence of agglomeration of nanocrystalline structures. The molecular structural properties of the thin films were characterized using Fourier transform infrared spectroscopy (FTIR), which revealed the stability of the chemical bonds of the compound under thermal treatment. The dark electrical conductivity of the films at various heat treatment stages showed that NPC films have a better conductivity than that of its earlier reported naphthalocyanine films and the activation energy was found to decrease with annealing temperature. The absorption edge shifted to the lower energy as a consequence of the thermal annealing of the film and the fundamental absorption edges correspond to a

  5. Design Principles for Digital Badges Used in Libraries

    Science.gov (United States)

    Rimland, Emily; Raish, Victoria

    2017-01-01

    Digital badges give libraries greater flexibility in delivering impactful instruction to students. They serve as flexible, stackable microcredentials that sequence an information literacy experience across the curriculum. Design considerations rooted in learning theory have a foundation through which to drive decisions. Information literacy badges…

  6. Glass badge dosimetry system for large scale personal monitoring

    International Nuclear Information System (INIS)

    Norimichi Juto

    2002-01-01

    Glass Badge using silver activated phosphate glass dosemeter was specially developed for large scale personal monitoring. And dosimetry systems such as an automatic leader and a dose equipment calculation algorithm were developed at once to achieve reasonable personal monitoring. In large scale personal monitoring, both of precision for dosimetry and confidence for lot of personal data handling become very important. The silver activated phosphate glass dosemeter has basically excellent characteristics for dosimetry such as homogeneous and stable sensitivity, negligible fading and so on. Glass Badge was designed to measure 10 keV - 10 MeV range of photon. 300 keV - 3 MeV range of beta, and 0.025 eV - 15 MeV range of neutron by included SSNTD. And developed Glass Badge dosimetry system has not only these basic characteristics but also lot of features to keep good precision for dosimetry and data handling. In this presentation, features of Glass Badge dosimetry systems and examples for practical personal monitoring systems will be presented. (Author)

  7. Transferred metal electrode films for large-area electronic devices

    International Nuclear Information System (INIS)

    Yang, Jin-Guo; Kam, Fong-Yu; Chua, Lay-Lay

    2014-01-01

    The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the minimum thickness of the polymer gate dielectric to typically more than 300 nm due to deep hot metal atom penetration and damage of the dielectric. We show here that the self-release layer transfer method recently developed for high-quality graphene transfer is also capable of giving high-quality metal thin-film transfers to produce high-performance capacitors and OFETs with superior dielectric breakdown strength even for ultrathin polymer dielectric films. Dielectric breakdown strengths up to 5–6 MV cm −1 have been obtained for 50-nm thin films of polystyrene and a cyclic olefin copolymer TOPAS ® (Zeon). High-quality OFETs with sub-10 V operational voltages have been obtained this way using conventional polymer dielectrics and a high-mobility polymer semiconductor poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene-2,5-diyl]. The transferred metal films can make reliable contacts without damaging ultrathin polymer films, self-assembled monolayers and graphene, which is not otherwise possible from evaporated or sputtered metal films

  8. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric...... elements. We show experimental results from two types PZT/PZT harvesting devices, one where the Pb(ZrxTi1−x)O3 (PZT) thick films are high pressure treated during the fabrication and the other where the treatment is omitted. We find that with the high pressure treatment prior to PZT sintering, the films...

  9. AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

    OpenAIRE

    Wang, Wenbo; Fu, Yong Qing; Chen, Jinju; Xuan, Weipeng; Chen, Jinkai; Mayrhofer, Paul; Duan, Pengfei; Bittner, Elmar; Luo, Jikui

    2016-01-01

    This paper reports the characterization of scandium aluminum nitride (Al1−x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (

  10. Elaboration of a semiconductive thin film device technology on the basis of monocrystalline gallium arsenide

    International Nuclear Information System (INIS)

    Antoshenko, V.; Taurbaev, T.; Skirnevskaya, E.; Shorin, V.; Mihajlov, L.; Bajganatova, Sh.

    1996-01-01

    The aim of the project: To elaborate the economical technological process of preparing super thin monocrystalline GaAs substrates and device structures for semiconductive electronics. To realize the project it is necessary to solve following problems: o to elaborate and produce the equipment for preparing of separated films and thin film multilayer structures with p-n-junction; - to study conditions of preparing plane crystal perfect separated Ga(Al)As - films; - to optimize regimes of preparing thin film structures with p- and n-conductive - layers; - to determine the optimal methods of transferring autonomous films and structures over the second substrates; - to work out preparing methods of ohmic contacts and electrical commutation; - to optimize the process of repeated use of initial monocrystalline GaAs substrate; - to prepare the samples of discrete thin film photo- and emitting devices. As the result of project realization there will be created cheap ecological technology of heterojunction optoelectronic devices on the basis of GaAs and AlGaAs solid solutions, the laboratory samples of thin film devices will be presented

  11. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  12. Improving light harvesting in polymer photodetector devices through nanoindented metal mask films

    NARCIS (Netherlands)

    Macedo, A. G.; Zanetti, F.; Mikowski, A.; Hummelen, J. C.; Lepienski, C. M.; da Luz, M. G. E.; Roman, L. S.

    2008-01-01

    To enhance light harvesting in organic photovoltaic devices, we propose the incorporation of a metal (aluminum) mask film in the system's usual layout. We fabricate devices in a sandwich geometry, where the mask (nanoindented with a periodic array of holes of sizes d and spacing s) is added between

  13. On-line display used with cathode ray tube film measuring device

    International Nuclear Information System (INIS)

    Fortney, L.R.; Robertson, W.J.

    1981-01-01

    An improved display has been developed for use on our computer controlled measuring device (RIPPLE). The device features a television image of the film and a digital presentation on the same X, Y display. The television image is formed using a modified left and right raster scan which can cover 50% more area in the same time as the traditional raster

  14. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Macedo, Andreia G. [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Grova, Isabel R.; Ackcelrud, Leni [Laboratorio de Polimeros Paulo Scarpa, Departamento de Quimica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Reis, Francoise T.; Sartorelli, Maria L. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Roman, Lucimara S., E-mail: lsroman@fisica.ufpr.br [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil)

    2012-05-01

    In this work, porous ordered TiO{sub 2} films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  15. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Macedo, Andreia G.; Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S.; Grova, Isabel R.; Ackcelrud, Leni; Reis, Françoise T.; Sartorelli, Maria L.; Roman, Lucimara S.

    2012-01-01

    In this work, porous ordered TiO 2 films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  16. a Brief Survey on Basic Properties of Thin Films for Device Application

    Science.gov (United States)

    Rao, M. C.; Shekhawat, M. S.

    Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

  17. Piezoelectric Polymer Films for Application in Monitoring Devices

    Science.gov (United States)

    1977-02-01

    pulse is also evident, as is the decay rate of the pressure, and what appears to be a pronounced " dicrotic notch ," which is asso- ciated with heart valve...investigation of factors responsible for this remark- able behavior of an organic polymer. Commercial PVF 2 homopolymer and copolymer films were oriented by... factors such as changes in elastic modulus of the film with temperature, depolarization processes at the higher temperature, and pyroelectric effects

  18. Polycaprolactone Thin-Film Micro- and Nanoporous Cell-Encapsulation Devices.

    Science.gov (United States)

    Nyitray, Crystal E; Chang, Ryan; Faleo, Gaetano; Lance, Kevin D; Bernards, Daniel A; Tang, Qizhi; Desai, Tejal A

    2015-06-23

    Cell-encapsulating devices can play an important role in advancing the types of tissue available for transplantation and further improving transplant success rates. To have an effective device, encapsulated cells must remain viable, respond to external stimulus, and be protected from immune responses, and the device itself must elicit a minimal foreign body response. To address these challenges, we developed a micro- and a nanoporous thin-film cell encapsulation device from polycaprolactone (PCL), a material previously used in FDA-approved biomedical devices. The thin-film device construct allows long-term bioluminescent transfer imaging, which can be used for monitoring cell viability and device tracking. The ability to tune the microporous and nanoporous membrane allows selective protection from immune cell invasion and cytokine-mediated cell death in vitro, all while maintaining typical cell function, as demonstrated by encapsulated cells' insulin production in response to glucose stimulation. To demonstrate the ability to track, visualize, and monitor the viability of cells encapsulated in implanted thin-film devices, we encapsulated and implanted luciferase-positive MIN6 cells in allogeneic mouse models for up to 90 days. Lack of foreign body response in combination with rapid neovascularization around the device shows promise in using this technology for cell encapsulation. These devices can help elucidate the metrics required for cell encapsulation success and direct future immune-isolation therapies.

  19. Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

    DEFF Research Database (Denmark)

    Hansen, Christian Rein; Sørensen, Thomas Just; Glyvradal, Magni

    2009-01-01

    By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum....... By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers...

  20. Nanoporous metal film: An energy-dependent transmission device for electron waves

    International Nuclear Information System (INIS)

    Grech, S.; Degiovanni, A.; Lapena, L.; Morin, R.

    2011-01-01

    We measure electron transmission through free-standing ultrathin nanoporous gold films, using the coherent electron beam emitted by sharp field emission tips in a low energy electron projection microscope setup. Transmission coefficient versus electron wavelength plots show periodic oscillations between 75 and 850 eV. These oscillations result from the energy dependence of interference between paths through the gold and paths through the nanometer-sized pores of the film. We reveal that these films constitute high transmittance quantum devices acting on electron waves through a wavelength-dependent complex transmittance defined by the porosity and the thickness of the film.

  1. Science and technology of biocompatible thin films for implantable biomedical devices.

    Energy Technology Data Exchange (ETDEWEB)

    Li, W.; Kabius, B.; Auciello, O.; Materials Science Division

    2010-01-01

    This presentation focuses on reviewing research to develop two critical biocompatible film technologies to enable implantable biomedical devices, namely: (1) development of bioinert/biocompatible coatings for encapsulation of Si chips implantable in the human body (e.g., retinal prosthesis implantable in the human eye) - the coating involves a novel ultrananocrystalline diamond (UNCD) film or hybrid biocompatible oxide/UNCD layered films; and (2) development of biocompatible films with high-dielectric constant and microfabrication process to produce energy storage super-capacitors embedded in the microchip to achieve full miniaturization for implantation into the human body.

  2. Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

    Science.gov (United States)

    Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

    2015-04-08

    Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

  3. Girl Scout Camps and Badges: Engaging Girls in NASA Science

    Science.gov (United States)

    Harman, P. K.; DeVore, E. K.

    2017-12-01

    Reaching for the Stars: NASA Science for Girl Scouts (Girl Scout Stars) disseminates NASA STEM education-related resources, fosters interaction between Girl Scouts and NASA Subject Matter Experts (SMEs), and engages Girl Scouts in NASA science and programs through space science badges and summer camps. A space science badge is in development for each of the six levels of Girl Scouts: Daisies, Grades K - 1; Brownies, Grades 2 -3; Juniors, Grades 4 -5; Cadettes, Grades 6 -8; Seniors, Grades 9 -10: and Ambassadors, Grades 11 -12. Daisy badge will be accomplished by following three steps with two choices each. Brownie to Ambassador badges will be awarded by completing five steps with three choices for each. The badges are interwoven with science activities, role models (SMEs), and steps that lead girls to explore NASA missions. External evaluators monitor three rounds of field-testing and deliver formative assessment reports. Badges will be released in Fall of 2018 and 2019. Girl Scout Stars supports two unique camp experiences. The University of Arizona holds an Astronomy Destination, a travel and immersion adventure for individual girls ages 13 and older, which offers dark skies and science exploration using telescopes, and interacting with SMEs. Girls lean about motion of celestial objects and become astronomers. Councils send teams of two girls, a council representative and an amateur astronomer to Astronomy Camp at Goddard Space Flight Center. The teams were immersed in science content and activities, and a star party; and began to plan their new Girl Scout Astronomy Clubs. The girls will lead the clubs, aided by the council and amateur astronomer. Camps are evaluated by the Girl Scouts Research Institute. In Girl Scouting, girls discover their skills, talents and what they care about; connect with other Girl Scouts and people in their community; and take action to change the world. This is called the Girl Scout Leadership Experience. With girl-led, hands on

  4. Thin film devices used as oxygen partial pressure sensors

    Science.gov (United States)

    Canady, K. S.; Wortman, J. J.

    1970-01-01

    Electrical conductivity of zinc oxide films to be used in an oxygen partial pressure sensor is measured as a function of temperature, oxygen partial pressure, and other atmospheric constituents. Time response following partial pressure changes is studied as a function of temperature and environmental changes.

  5. Combining the Converse Humidity/Resistance Response Behaviors of RGO Films for Flexible Logic Devices

    KAUST Repository

    Tai, Yanlong

    2017-03-23

    Carbon nanomaterials have excellent humidity sensing performance. Here, we demonstrate that reduced-graphene-oxide- (rGO) based conductive films with different thermal reduction times have gradient and invertible humidity/electrical resistance responses: rGO films (< 11 h, negative response, regarded as a signal of “0”), rGO films (around 11-13 h, balance point) and rGO films (> 13 h, negative response, regarded as a signal of “1”). We propose a new mechanism that describes a “scale”-like model for rGO films to explain these behaviors based on contributions from Ohm-contact resistance and capacitive reactance at interplate junctions, and intrinsic resistances of the nanoplates, respectively. This mechanism is accordingly validated via a series of experiments and electrical impedance spectroscopies, which complement more classical models based on proton conductivity. To explore the practical applications of the converse humidity/resistance responses, three simple flexible logic devices were developed, i) a rGO pattern for humidity-insensitive conductive film, which has the potential to greatly improve the stability of carbon-based electrical device to humidity; ii) a Janus pattern of rGO films for gesture recognition, which is very useful to human/machine interactions; iii) a sandwich pattern of rGO films for 3-dimensional (3D) noncontact sensing, which will be complementary to existing 3D touch technique.

  6. Using digital badges in South Africa informing the validation of a multi-channel open badge system at a German university

    CSIR Research Space (South Africa)

    Niehaus, E

    2017-05-01

    Full Text Available strategy, remains an area to explore. One of the most crucial points of concern currently with digital badging is how to validate or credit a competence or skillset and what value this validation will carry for the individual. The Mozilla digital badge...

  7. AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

    International Nuclear Information System (INIS)

    Wang, W B; Xuan, W P; Chen, J K; Wang, X Z; Luo, J K; Fu, Y Q; Chen, J J; Duan, P F; Mayrhofer, P; Bittner, A; Schmid, U

    2016-01-01

    This paper reports the characterization of scandium aluminum nitride (Al 1−xS c xN , x   =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients ( K 2 , ∼2%) compared with pure AlN films (<0.5%). The performance of the two types of devices was also investigated and compared, using acoustofluidics as an example. The AlScN/Si SAW devices achieved much lower threshold powers for the acoustic streaming and pumping of liquid droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices. (paper)

  8. Recent progress on thin-film encapsulation technologies for organic electronic devices

    Science.gov (United States)

    Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

    2016-03-01

    Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

  9. Buy badges and help finance Cap Loisirs activities!

    CERN Multimedia

    2008-01-01

    Please give a warm welcome to Cap Loisirs’ volunteers who will be manning a stand at the main entrance on Friday 8 February! In honour of St. Valentine’s Day, they will be selling a selection of 5 badges designed by artist Anna Sommer, depicting declarations of love by our friends from the animal kingdom. Price : Frs. 3.- per badge The aim of Fondation Cap Loisirs is to provide leisure activities for mentally handicapped children, adolescents and adults. The Foundation offers a wide range of activities which allow the mentally handicapped to enjoy quality leisure in areas as varied as culture, sport, tourism, travel and artistic expression. Fondation Cap Loisirs Rue de Monthoux 66 – 1201 Geneva – Tel: 022 731 86 00 – CCP Genève 12-5587-5 – caploisirs@caploisirs.ch – http://www.Caploisirs.ch

  10. ZnO film for application in surface acoustic wave device

    International Nuclear Information System (INIS)

    Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

    2007-01-01

    High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

  11. Periodicity of TLD badge personnel monitoring service in India

    International Nuclear Information System (INIS)

    Kher, R.K.; Joshi, V.D.; Kaushik, Aruna; Sharma, Amiy; Chatterjee, S.

    2003-01-01

    The periodicity of an individual monitoring service is an important aspect. Presently minimum period for TLD badge service is maintained as 'calendar month' and choice of quarterly service is also offered. The periodicity of the TLD service for a given category/application type of institution, is to be fixed taking into account level of average occupational doses in all or typical institutions of given category and other information indicating the status of safety and possible fluctuations of exposure levels and potential for overexposure cases. This paper presents the status on the periodicity of TLD Badge Service as is evolved and adopted for the four broad categories i.e. DAE (Nuclear Fuel Cycle) Institutions, Industrial, Medical, Research institutions. It is concluded that quarterly service is a convenient option for institution categories where type of work/workload, and work practices are such that occupational exposures could be normally kept below about one mSv or so in the monitoring period, average annual dose less than 1 mSv and persons receiving annual dose >10 mSv is less than 1% of total in the category. Also, the judicious use of the flexibility in the periodicity of TLD Badge service would help (i) to keep the monitoring related workload to the optimum for the monitoring units and (ii) to keep the expenses incurred by the institution towards monitoring to the minimum without sacrificing radiation safety (iii) to focus the extra monitoring efforts on the applications/situations requiring improvement in radiation safety. (author)

  12. Freestanding, heat resistant microporous film for use in energy storage devices

    Science.gov (United States)

    Pekala, Richard W.; Cherukupalli, Srinivas; Waterhouse, Robert R.

    2018-02-20

    Preferred embodiments of a freestanding, heat resistant microporous polymer film (10) constructed for use in an energy storage device (70, 100) implements one or more of the following approaches to exhibit excellent high temperature mechanical and dimensional stability: incorporation into a porous polyolefin film of sufficiently high loading levels of inorganic or ceramic filler material (16) to maintain porosity (18) and achieve low thermal shrinkage; use of crosslinkable polyethylene to contribute to crosslinking the polymer matrix (14) in a highly inorganic material-filled polyolefin film; and heat treating or annealing of biaxially oriented, highly inorganic material-filled polyolefin film above the melting point temperature of the polymer matrix to reduce residual stress while maintaining high porosity. The freestanding, heat resistant microporous polymer film embodiments exhibit extremely low resistance, as evidenced by MacMullin numbers of less than 4.5.

  13. Flexible barrier film, method of forming same, and organic electronic device including same

    Science.gov (United States)

    Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

    2013-03-26

    A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

  14. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  15. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  16. Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

    KAUST Repository

    Catrysse, Peter B.

    2010-08-11

    We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

  17. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    Science.gov (United States)

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  18. Badges to Acknowledge Open Practices: A Simple, Low-Cost, Effective Method for Increasing Transparency.

    Directory of Open Access Journals (Sweden)

    Mallory C Kidwell

    2016-05-01

    Full Text Available Beginning January 2014, Psychological Science gave authors the opportunity to signal open data and materials if they qualified for badges that accompanied published articles. Before badges, less than 3% of Psychological Science articles reported open data. After badges, 23% reported open data, with an accelerating trend; 39% reported open data in the first half of 2015, an increase of more than an order of magnitude from baseline. There was no change over time in the low rates of data sharing among comparison journals. Moreover, reporting openness does not guarantee openness. When badges were earned, reportedly available data were more likely to be actually available, correct, usable, and complete than when badges were not earned. Open materials also increased to a weaker degree, and there was more variability among comparison journals. Badges are simple, effective signals to promote open practices and improve preservation of data and materials by using independent repositories.

  19. Tweeting badges: user motivations for displaying achievement in publicly networked environments.

    Science.gov (United States)

    Kwon, K Hazel; Halavais, Alexander; Havener, Shannon

    2015-02-01

    Badge systems, a common mechanism for gamification on social media platforms, provide a way for users to present their knowledge or experience to others. This study aims to contribute to the understanding of why social media users publicize their achievements in the form of online badges. Five motivational factors for badge display in public networked environments are distinguished-self-efficacy, social incentives, networked support, passing time, and inattentive sharing-and it is suggested that different badge types are associated with different motivations. System developers are advised to consider these components in their designs, applying the elements most appropriate to the communities they serve. Comparing user motivations associated with badges shared across boundaries provides a better understanding of how online badges relate to the larger social media ecosystem.

  20. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  1. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Science.gov (United States)

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  2. A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

    KAUST Repository

    Tai, Yanlong

    2017-08-30

    Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film\\'s structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

  3. Micropatterned superconducting film circuitry for operation in hybrid quantum devices

    International Nuclear Information System (INIS)

    Bothner, Daniel

    2013-01-01

    This thesis discusses three aspects of the arduous way towards hybrid quantum systems consisting of superconducting circuits and ensembles of ultracold paramagnetic atoms. In the first part of the thesis, superconducting coplanar microwave resonators as used for quantum information processing with superconducting qubits are investigated in magnetic fields. In the second part of the thesis integrated atom chips are designed and fabricated, which offer the possibility to trap an ensemble of ultracold atoms close to a superconducting coplanar resonator on that chip. In the third and last part of the thesis, unconventional disordered and quasiperiodic arrangements of microfabricated holes (antidots) in superconducting films are patterned and investigated with respect to the impact of the arrangement on the superconductor transport properties in magnetic fields.

  4. Growth, characterization and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, R. F.; Glass, J. T.; Nemanich, R. J.; Bozeman, S. P.; Sowers, A. T.

    1995-06-01

    Experimental and theoretical studies concerned with interface interactions of diamond with Si, Ni, and Ni3Si substrates have been conducted. Oriented diamond films deposited on (100) Si were characterized by polar Raman, polar x-ray diffraction (XRD), and cross-sectional high resolution transmission electron microscopy (HRTEM). These sutides showed that the diamond(100)/Si(100) interface adopted the 3:2-match arrangement rather than a 45 deg rotation. Extended Hueckel tight-binding (EHTB) electronic structure calculations for a model system revealed that the interface interaction favors the 3:2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles; under the same growth conditions, graphite was formed on the nickel substrate. Our EHTB electronic structure calculations showed that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond nucleation over graphite nucleation, but this was not the case for the (111) and (100) surfaces of Ni.

  5. Synthesis of nanostructured multiphase Ti(C,N)/a-C films by a plasma focus device

    International Nuclear Information System (INIS)

    Ghareshabani, E.; Rawat, R.S.; Sobhanian, S.; Verma, R.; Karamat, S.; Pan, Z.Y.

    2010-01-01

    Nanostructured multiphase Ti(C,N)/a-C films were deposited using a 3.3 kJ pulsed plasma focus device onto silicon (1 0 0) substrates at room temperature. The plasma focus device, fitted with solid titanium anode instead of usual hollow copper anode, was operated with nitrogen and Ar/CH 4 as the filling gas. Films were deposited with different number of shots, at 80 mm from top of the anode and at zero angular position with respect to anode axis. X-ray diffraction results show the diffraction peaks related to different compounds such as TiC 2 , TiN, Ti 2 CN, Ti and TiC 0.62 confirming the deposition of multiphase titanium carbo-nitride composite films on silicon. X-ray photoelectron spectroscopy confirms the formation of Ti-C, C-N, Ti-N, Ti-O and C-C bonds in the films. Scanning electron microscopy reveals that the nanostructure grains are agglomerates of smaller nanoparticles about 10-20 nm in size. Raman studies verify the formation of multiphase Ti(C,N) and also of amorphous graphite in the films. The maximum microhardness value of the composite film is 14.8 ± 1.3 GPa for 30 shots.

  6. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    Science.gov (United States)

    Munshi, Amit Harenkumar

    CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

  7. Hydrazine-based deposition route for device-quality CIGS films

    International Nuclear Information System (INIS)

    Mitzi, David B.; Yuan, Min; Liu, Wei; Kellock, Andrew J.; Chey, S. Jay; Gignac, Lynne; Schrott, Alex G.

    2009-01-01

    A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C

  8. Hydrazine-based deposition route for device-quality CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B. [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)], E-mail: dmitzi@us.ibm.com; Yuan, Min; Liu, Wei [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Kellock, Andrew J [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States); Chey, S Jay; Gignac, Lynne; Schrott, Alex G [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)

    2009-02-02

    A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.

  9. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, R.; Lei, A.; Christiansen, T. L.

    2011-01-01

    We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material...

  10. Summary of the recent conference on thin-film neutron optical devices

    International Nuclear Information System (INIS)

    Majkrzak, C.F.

    1989-01-01

    The proceedings of the conference of the International Society for Optical Engineering on Thin-Film Neutron Optical Devices: Mirrors, Supermirrors, Multilayer Monochromators, Polarizers and Beam Guides, which was held in San Diego, California in August, 1988, are summarized here. 2 refs

  11. Complex composition film condensation in the sluice device of an electron microscope

    International Nuclear Information System (INIS)

    Kukuev, V.I.; Lesovoj, M.V.; Vlasov, D.A.; Malygin, M.V.; Domashevskaya, Eh.P.; Tomashpol'skij, Yu.Ya.

    1994-01-01

    Based on the sluice device of an electron microscope a system is developed for material laser evaporation and vapor condensation on a substrate, situated in the microscope specimen holder. Substrate heating by laser radiation to 100 deg C is used. The system is applied for investigating growth of high-temperature superconductor films

  12. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso; Nayak, Pradipta K.; Al-Jawhari, Hala A.; Bianchi Granato, Danilo; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2013-01-01

    developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values

  13. The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

    Science.gov (United States)

    Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

    2010-09-01

    We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

  14. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    Science.gov (United States)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  15. Evaluating and improving the performance of thin film force sensors within body and device interfaces.

    Science.gov (United States)

    Likitlersuang, Jirapat; Leineweber, Matthew J; Andrysek, Jan

    2017-10-01

    Thin film force sensors are commonly used within biomechanical systems, and at the interface of the human body and medical and non-medical devices. However, limited information is available about their performance in such applications. The aims of this study were to evaluate and determine ways to improve the performance of thin film (FlexiForce) sensors at the body/device interface. Using a custom apparatus designed to load the sensors under simulated body/device conditions, two aspects were explored relating to sensor calibration and application. The findings revealed accuracy errors of 23.3±17.6% for force measurements at the body/device interface with conventional techniques of sensor calibration and application. Applying a thin rigid disc between the sensor and human body and calibrating the sensor using compliant surfaces was found to substantially reduce measurement errors to 2.9±2.0%. The use of alternative calibration and application procedures is recommended to gain acceptable measurement performance from thin film force sensors in body/device applications. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

  16. Thermally evaporated thin films of SnS for application in solar cell devices

    International Nuclear Information System (INIS)

    Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

    2009-01-01

    SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

  17. A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

    KAUST Repository

    Tai, Yanlong; Chen, Tao; Lubineau, Gilles

    2017-01-01

    Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film's structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

  18. Mesoporous nanocrystalline film architecture for capacitive storage devices

    Science.gov (United States)

    Dunn, Bruce S.; Tolbert, Sarah H.; Wang, John; Brezesinski, Torsten; Gruner, George

    2017-05-16

    A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

  19. Open digital badges in Open edX

    OpenAIRE

    Hickey, Daniel T.; Barba, Lorena A.; Lemoie, Kerri; Amigot, Michael; Ewens, Damian

    2014-01-01

    Slides for the presentation at the Open edX Conference, Cambridge, MA 2014.   This talk presented the first public update of our collaboration to implement open digital badges in Dr. Barba's new MOOC, "Practical Numerical Methods with Python." It's a collaboration between Indiana University's Center for Research on Learning and Technology (led by Prof. Daniel T. Hickey);  Prof. Lorena Barba and her team at George Washington University, with her partners at IBL Studios Education, and...

  20. Spin coated graphene films as the transparent electrode in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Kymakis, E.; Stratakis, E.; Stylianakis, M.M.; Koudoumas, E.; Fotakis, C.

    2011-01-01

    Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C 61 -butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

  1. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    Science.gov (United States)

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  2. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    Science.gov (United States)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  3. In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

    Science.gov (United States)

    Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

    2017-04-25

    Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

  4. Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

    Directory of Open Access Journals (Sweden)

    Yuhang SUN

    2015-08-01

    Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

  5. PZT Thin-Film Micro Probe Device with Dual Top Electrodes

    Science.gov (United States)

    Luo, Chuan

    Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths

  6. Fabrication of 3D Microfluidic Devices by Thermal Bonding of Thin Poly(methyl methacrylate) Films

    KAUST Repository

    Perez, Paul

    2012-07-01

    The use of thin-film techniques for the fabrication of microfluidic devices has gained attention over the last decade, particularly for three-dimensional channel structures. The reasons for this include effective use of chip volume, mechanical flexibility, dead volume reduction, enhanced design capabilities, integration of passive elements, and scalability. Several fabrication techniques have been adapted for use on thin films: laser ablation and hot embossing are popular for channel fabrication, and lamination is widely used for channel enclosure. However, none of the previous studies have been able to achieve a strong bond that is reliable under moderate positive pressures. The present work aims to develop a thin-film process that provides design versatility, speed, channel profile homogeneity, and the reliability that others fail to achieve. The three building blocks of the proposed baseline were fifty-micron poly(methyl methacrylate) thin films as substrates, channel patterning by laser ablation, and device assembly by thermal-fusion bonding. Channel fabrication was characterized and tuned to produce the desired dimensions and surface roughness. Thermal bonding was performed using an adapted mechanical testing device and optimized to produce the maximum bonding strength without significant channel deformation. Bonding multilayered devices, incorporating conduction lines, and integrating various types of membranes as passive elements demonstrated the versatility of the process. Finally, this baseline was used to fabricate a droplet generator and a DNA detection chip based on micro-bead agglomeration. It was found that a combination of low laser power and scanning speed produced channel surfaces with better uniformity than those obtained with higher values. In addition, the implemented bonding technique provided the process with the most reliable bond strength reported, so far, for thin-film microfluidics. Overall, the present work proved to be versatile

  7. Closed-loop model: An optimization of integrated thin-film magnetic devices

    Energy Technology Data Exchange (ETDEWEB)

    El-Ghazaly, Amal, E-mail: amale@stanford.edu [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Sato, Noriyuki [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); White, Robert M. [Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Wang, Shan X. [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States)

    2017-06-15

    Highlights: • An analytical model for inductance of thin-film magnetic devices was developed. • Different device topologies and magnetic permeabilities were addressed. • Inductance of various topologies were calculated and compared with simulation. • The model predicts simulated values with excellent accuracy. - Abstract: A generic analytical model has been developed to fully describe the flux closure through magnetic inductors. The model was applied to multiple device topologies including solenoidal single return path and dual return path inductors as well as spiral magnetic inductors for a variety of permeabilities and dimensions. The calculated inductance values from the analytical model were compared with simulated results for each of the analyzed device topologies and found to agree within 0.1 nH for the range of typical thin-film magnetic permeabilities (∼10{sup 2} to 10{sup 3}). Furthermore, the model can be used to evaluate behavior in other integrated or discrete magnetic devices with either non-isotropic or isotropic permeability and used to produce more efficient device designs in the future.

  8. Tutoring Online Tutors: Using Digital Badges to Encourage the Development of Online Tutoring Skills

    Science.gov (United States)

    Hrastinski, Stefan; Cleveland-Innes, Martha; Stenbom, Stefan

    2018-01-01

    Online tutors play a critical role in e-learning and need to have an appropriate set of skills in addition to subject matter expertise. This paper explores how digital badges can be used to encourage the development of online tutoring skills. Based on previous research, we defined three digital badges, which are examples of essential tutoring…

  9. Teachers' Perceptions of Digital Badges as Recognition of Professional Development

    Science.gov (United States)

    Jones, W. Monty; Hope, Samantha; Adams, Brianne

    2018-01-01

    This mixed methods study examined teachers' perceptions and uses of digital badges received as recognition of participation in a professional development program. Quantitative and qualitative survey data was collected from 99 K-12 teachers who were awarded digital badges in Spring 2016. In addition, qualitative data was collected through…

  10. Recognising Informal Elearning with Digital Badging: Evidence for a Sustainable Business Model

    Science.gov (United States)

    Law, Patrina

    2015-01-01

    Digital badging as a trend in education is now recognised. It offers a way to reward and motivate, providing evidence of skills and achievements. Badged Open Courses (BOCs) were piloted by The Open University (OU) in 2013. The project built on research into the motivations and profiles of learners using free educational resources which the OU…

  11. A novel optic bistable device with very low threshold intensity using photorefractive films

    Science.gov (United States)

    Wang, Sean X.; Sun, Yuankun; Trivedi, Sudhir B.; Li, Guifang

    1994-08-01

    Brimrose Corporation of America reports the successful completion of the SBIR Phase I research in low-threshold intensity optical bistable devices using photorefractive nonlinearity. A thin photorefractive film optical bistable device was proposed in the Phase I proposal. The feasibility of this device was theoretically investigated. The theoretical feasibility study formulates the materials requirements in such a kind of configuration for Phase II research. In addition, we have proposed and investigated another configuration of optical bistable devices that do not require advanced photorefractive materials, namely, the self-pumped phase conjugator. We have successfully demonstrated a low-threshold optical bistable operation in a KNSBN:CU crystal. To the best of our knowledge, the threshold of 650 mW/sq. cm is the lowest of its kind to be achieved so far.

  12. Fully transparent thin-film transistor devices based on SnO2 nanowires.

    Science.gov (United States)

    Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

    2007-08-01

    We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

  13. A new automatic design method to develop multilayer thin film devices for high power laser applications

    International Nuclear Information System (INIS)

    Sahoo, N.K.; Apparao, K.V.S.R.

    1992-01-01

    Optical thin film devices play a major role in many areas of frontier technology like development of various laser systems to the designing of complex and precision optical systems. Design and development of these devices are really challenging when they are meant for high power laser applications. In these cases besides desired optical characteristics, the devices are expected to satisfy a whole range of different needs like high damage threshold, durability etc. In the present work a novel completely automatic design method based on Modified Complex Method has been developed for designing of high power thin film devices. Unlike most of the other methods it does not need any suitable starting design. A quarterwave design is sufficient to start with. If required, it is capable of generating its own starting design. The computer code of the method is very simple to implement. This report discusses this novel automatic design method and presents various practicable output designs generated by it. The relative efficiency of the method along with other powerful methods has been presented while designing a broadband IR antireflection coating. The method is also incorporated with 2D and 3D electric field analysis programmes to produce high damage threshold designs. Some experimental devices developed using such designs are also presented in the report. (author). 36 refs., 41 figs

  14. Electroluminescent efficiency of alternating current thick film devices using ZnS:Cu,Cl phosphor

    International Nuclear Information System (INIS)

    Sharma, Gaytri; Han, Sang Do; Kim, Jung Duk; Khatkar, Satyender P.; Rhee, Young Woo

    2006-01-01

    ZnS:Cu,Cl phosphor is prepared with the help of low intensity milling of the precursor material in two step firing process. The synthesized phosphor is used for the preparation of alternating current thick film electroluminescent (ACTFEL) devices with screen-printing method. The commission international de l'Eclairge (CIE) color co-ordinates of the ACTFEL devices prepared by these phosphor layers shows a shift from bluish-green to green region with the change in the amount of Cu in the phosphor. The various parameters to improve the efficiency and luminance of the devices have also been investigated. The brightness of the ac thick film EL device depends on the particle size of the phosphor, crystallinity, amount of binding material and applied voltage. The EL device fabricated with phosphor having average particle size of 25 μm shows maximum luminescence, when 60% phosphor concentration is used with respect to binding material. EL intensity is also linearly dependent on frequency. It is due the increase of excitation chances of the host matrix or dopant ions with increasing frequency

  15. Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

    International Nuclear Information System (INIS)

    Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

    1990-09-01

    We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

  16. Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Guillen, C.; Herrero, J

    2003-05-01

    Both frontal and back electrical contacts have been developed onto polyimide sheets (Kapton KJ[reg]) as alternative substrates to the conventional glasses, for application in lightweight and flexible thin film photovoltaic devices. Transparent and conductive indium tin oxide (ITO) thin films have been deposited by r.f.-magnetron sputtering as the frontal electrical contact. On the other hand, Mo, Cr and Ni layers have been prepared by e-gun evaporation for the back electrical connections. ITO films deposited onto polyimide have shown similar optical transmittance and higher electrical conductivity than onto glass substrates. The transmittance decreases and the conductivity increases after heating at 400 sign C in vacuum atmosphere. Mo, Cr and Ni layers deposited onto polyimide showed similar structure and electrical conductivity than onto conventional glasses. The properties of Mo and Cr layers remained unchanged after heating at 400 sign C in selenium atmosphere.

  17. Design refinement of multilayer optical thin film devices with two optimization techniques

    International Nuclear Information System (INIS)

    Apparao, K.V.S.R.

    1992-01-01

    The design efficiency of two different optimization techniques of designing multilayer optical thin film devices is compared. Ten different devices of varying complexities are chosen as design examples for the comparison. The design refinement efficiency and the design parameter characteristics of all the sample designs obtained with the two techniques are compared. The results of the comparison demonstrate that the new method of design developed using damped least squares technique with indirect derivatives give superior and efficient designs compared to the method developed with direct derivatives. (author). 23 refs., 4 tabs., 14 figs

  18. Electronic Properties and Device Applications of van-der-Waals Thin Films

    Science.gov (United States)

    Renteria, Jacqueline de Dios

    Successful exfoliation of graphene and discoveries of its unique electrical and thermal properties have motivated searches for other quasi two-dimensional (2D) materials with interesting properties. The layered van der Waals materials can be cleaved mechanically or exfoliated chemically by breaking the relatively weak bonding between the layers. In this dissertation research I addressed a special group of inorganic van der Waals materials -- layered transition metal dichalcogenides (MX2, where M=Mo, W, Nb, Ta or Ti and X=S, Se or Te). The focus of the investigation was electronic properties of thin films of TaSe2 and MoS2 and their device applications. In the first part of the dissertation, I describe the fabrication and performance of all-metallic three-terminal devices with the TaSe2 thin-film conducting channel. The layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. It was established that devices with nanometer-scale thickness channels exhibited strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. It was found that the drain-source current in thin-film 2H-TaSe2--Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. In the second part of the dissertation, I describe the fabrication, electrical testing and measurements of the low-frequency 1/f noise in three-terminal devices with the MoS2 thin-film channel (f is the frequency). Analysis of the experimental data allowed us to distinguish channel and contact noise contributions for both as fabricated and aged devices. The noise characteristics of MoS 2--Ti/Au devices are in agreement with the McWhorter model description. The latter is contrary to what is observed in

  19. Characterization of lipid films by an angle-interrogation surface plasmon resonance imaging device.

    Science.gov (United States)

    Liu, Linlin; Wang, Qiong; Yang, Zhong; Wang, Wangang; Hu, Ning; Luo, Hongyan; Liao, Yanjian; Zheng, Xiaolin; Yang, Jun

    2015-04-01

    Surface topographies of lipid films have an important significance in the analysis of the preparation of giant unilamellar vesicles (GUVs). In order to achieve accurately high-throughput and rapidly analysis of surface topographies of lipid films, a homemade SPR imaging device is constructed based on the classical Kretschmann configuration and an angle interrogation manner. A mathematical model is developed to accurately describe the shift including the light path in different conditions and the change of the illumination point on the CCD camera, and thus a SPR curve for each sampling point can also be achieved, based on this calculation method. The experiment results show that the topographies of lipid films formed in distinct experimental conditions can be accurately characterized, and the measuring resolution of the thickness lipid film may reach 0.05 nm. Compared with existing SPRi devices, which realize detection by monitoring the change of the reflective-light intensity, this new SPRi system can achieve the change of the resonance angle on the entire sensing surface. Thus, it has higher detection accuracy as the traditional angle-interrogation SPR sensor, with much wider detectable range of refractive index. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

    International Nuclear Information System (INIS)

    Wang, Ke; Chen, Ruofei; Zhuang, Fengjiang; Chen, Chuanwen; Su, Shaojian; Xiang, Yang

    2015-01-01

    Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~ 40 nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diffraction measurement, and the dominated absorption band from the ordered structures was further confirmed by ultraviolet-visible spectroscopy. The current–voltage characteristics of the junctions formed using TIPS-Pentacene on n-type Si substrates show good rectifying behavior with rectification ratios over 100 at 1 V. In the heterojunctions, barrier heights of ~ 0.8 eV and ideality factors of ~ 2 were determined based on thermionic emission model. It shows that TIPS-Pentacene can work well with n-type Si to form Schottky-type rectifying devices. Capacitance–voltage measurement performed on the metal–insulator–semiconductor structure of TIPS-Pentacene on SiO 2 shows obvious effects of accumulation and depletion in TIPS-Pentacene with bias. The maximum width of the depletion layer in TIPS-Pentacene is estimated to be 9.4 nm. - Highlights: • Ordered 6,13-bis (triisopropylsilylethynyl) (TIPS)-Pentacene films are formed on substrates. • TIPS-Pentacene films can work with n-type Si as Schottky-type rectifying devices. • TIPS-Pentacene/SiO 2 show obvious effects of accumulation and depletion with bias

  1. Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ke, E-mail: K.Wang@hqu.edu.cn; Chen, Ruofei; Zhuang, Fengjiang; Chen, Chuanwen; Su, Shaojian; Xiang, Yang

    2015-06-01

    Two-hundred-nanometer-thick 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-Pentacene) films were formed on Si substrates by spin coating. The rms roughness of the spun dendrite-type films is ~ 40 nm, determined by atomic force microscopy. Ordered crystalline structures were revealed by x-ray diffraction measurement, and the dominated absorption band from the ordered structures was further confirmed by ultraviolet-visible spectroscopy. The current–voltage characteristics of the junctions formed using TIPS-Pentacene on n-type Si substrates show good rectifying behavior with rectification ratios over 100 at 1 V. In the heterojunctions, barrier heights of ~ 0.8 eV and ideality factors of ~ 2 were determined based on thermionic emission model. It shows that TIPS-Pentacene can work well with n-type Si to form Schottky-type rectifying devices. Capacitance–voltage measurement performed on the metal–insulator–semiconductor structure of TIPS-Pentacene on SiO{sub 2} shows obvious effects of accumulation and depletion in TIPS-Pentacene with bias. The maximum width of the depletion layer in TIPS-Pentacene is estimated to be 9.4 nm. - Highlights: • Ordered 6,13-bis (triisopropylsilylethynyl) (TIPS)-Pentacene films are formed on substrates. • TIPS-Pentacene films can work with n-type Si as Schottky-type rectifying devices. • TIPS-Pentacene/SiO{sub 2} show obvious effects of accumulation and depletion with bias.

  2. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  3. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  4. Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

    Directory of Open Access Journals (Sweden)

    Jhansirani KOTCHARLAKOTA

    2016-05-01

    Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

  5. Nanomechanical characterization of multilayered thin film structures for digital micromirror devices

    International Nuclear Information System (INIS)

    Wei Guohua; Bhushan, Bharat; Joshua Jacobs, S.

    2004-01-01

    The digital micromirror device (DMD), used for digital projection displays, comprises a surface-micromachined array of up to 2.07 million aluminum micromirrors (14 μm square and 15 μm pitch), which switch forward and backward thousands of times per second using electrostatic attraction. The nanomechanical properties of the thin-film structures used are important to the performance of the DMD. In this paper, the nanomechanical characterization of the single and multilayered thin film structures, which are of interest in DMDs, is carried out. The hardness, Young's modulus and scratch resistance of TiN/Si, SiO 2 /Si, Al alloy/Si, TiN/Al alloy/Si and SiO 2 /TiN/Al alloy/Si thin-film structures were measured using nanoindentation and nanoscratch techniques, respectively. The residual (internal) stresses developed during the thin film growth were estimated by measuring the radius of curvature of the sample before and after deposition. To better understand the nanomechanical properties of these thin film materials, the surface and interface analysis of the samples were conducted using X-ray photoelectron spectroscopy. The nanomechanical properties of these materials are analyzed and the impact of these properties on micromirror performance is discussed

  6. Hydrogen doped thin film diamond. Properties and application for electronic devices

    International Nuclear Information System (INIS)

    Looi, H.J.

    2000-01-01

    The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

  7. Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

    International Nuclear Information System (INIS)

    Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

    2011-01-01

    In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

  8. Digital Badges for STEM Learning in Secondary Contexts: A Mixed Methods Study

    Science.gov (United States)

    Elkordy, Angela

    The deficit in STEM skills is a matter of concern for national economies and a major focus for educational policy makers. The development of Information and Communications Technologies (ICT) has resulted in a rapidly changing workforce of global scale. In addition, ICT have fostered the growth of digital and mobile technologies which have been the learning context, formal and informal, for a generation of youth. The purpose of this study was to design an intervention based upon a competency-based, digitally-mediated, learning intervention: digital badges for learning STEM habits of mind and practices. Designed purposefully, digital badge learning trajectories and criteria can be flexible tools for scaffolding, measuring, and communicating the acquisition of knowledge, skills, or competencies. One of the most often discussed attributes of digital badges, is the ability of badges to motivate learners. However, the research base to support this claim is in its infancy; there is little empirical evidence. A skills-based digital badge intervention was designed to demonstrate mastery learning in key, age-appropriate, STEM competencies aligned with Next Generation Science Standards (NGSS) and other educational standards. A mixed methods approach was used to study the impact of a digital badge intervention in the sample middle and high school population. Among the findings were statistically significant measures which substantiate that in this student population, the digital badges increased perceived competence and motivated learners to persist at task.

  9. Student perceptions of digital badges in a drug information and literature evaluation course.

    Science.gov (United States)

    Fajiculay, Jay R; Parikh, Bhavini T; Wright, Casey V; Sheehan, Amy Heck

    2017-09-01

    The purpose of this article is to describe student perceptions of implementation of digital badges in a drug information and literature evaluation course. Two digital badges were developed as voluntary learning opportunities. Student perceptions were obtained through pre- and post-survey instruments consisting of selected questions from the Motivated Strategies for Learning Questionnaire. The response rate was 69% (106/153). At baseline, 53% of respondents agreed that digital badges could help them better understand course material. More students agreed they would share earned digital badges on LinkedIn (68%) than Facebook (19%). Most students who earned digital badges agreed that badges helped increase their confidence in course material (73%), focus on specific learning objectives (55%), look deeper into course competencies (64%), and were a useful adjunct to the traditional teaching method (82%). Digital badges were perceived by students as a positive adjunct to learning and may provide a novel mechanism for development of an electronic skills-based portfolio. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

    International Nuclear Information System (INIS)

    Park, Joon Seok; Maeng, Wan-Joo; Kim, Hyun-Suk; Park, Jin-Seong

    2012-01-01

    The present article is a review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First, an overview is provided on how electrical performance may be enhanced by the adoption of specific device structures and process schemes, the combination of various oxide semiconductor materials, and the appropriate selection of gate dielectrics and electrode metals in contact with the semiconductor. As metal oxide TFT devices are excellent candidates for switching or driving transistors in next generation active matrix liquid crystal displays (AMLCD) or active matrix organic light emitting diode (AMOLED) displays, the major parameters of interest in the electrical characteristics involve the field effect mobility (μ FE ), threshold voltage (V th ), and subthreshold swing (SS). A study of the stability of amorphous oxide TFT devices is presented next. Switching or driving transistors in AMLCD or AMOLED displays inevitably involves voltage bias or constant current stress upon prolonged operation, and in this regard many research groups have examined and proposed device degradation mechanisms under various stress conditions. The most recent studies involve stress experiments in the presence of visible light irradiating the semiconductor, and different degradation mechanisms have been proposed with respect to photon radiation. The last part of this review consists of a description of methods other than conventional vacuum deposition techniques regarding the formation of oxide semiconductor films, along with some potential application fields including flexible displays and information storage.

  11. Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices

    Energy Technology Data Exchange (ETDEWEB)

    Roy, M.S. [Defence Lab., Jodhpur (India). Camouflage Div.; Sharma, G.D.; Gupta, S.K. [Department of Physics, J.N.V. University, Jodhpur (Raj.) (India)

    1997-11-21

    The charge generation and photovoltaic effects observed with thin films of TY in the form of sandwich structures, were analysed by J-V, C-V and photoaction spectra. These measurements were explained in terms of n-type semiconductivity of TY thin film and by the formation of a Schottky barrier with ITO while Ohmic contact with an Al or In electrode. The existence of thermionic emission over the ITO-TY barrier has been observed in low voltage region, whereas at high voltages, the process is dominant by the series resistance of TY layer. Various electrical parameters were calculated from the analysis of J-V and C-V characteristics of the devices and discussed in details. The diode quality factor is higher for Al/TY/ITO than In/TY/ITO device which can be attributed to the formation of thin layer of Al{sub 2}O{sub 3} between Al and TY. The photoaction spectra of the devices reveal that the fraction of light which is absorbed near the ITO-TY interface, to the depth of 180 A, is responsible for producing the charge carriers. The photovoltaic parameters were also calculated from the J-V characteristics of the devices, under illumination and described in detail. (orig.) 21 refs.

  12. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Poullain, Gilles, E-mail: gilles.poullain@ensicaen.fr; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

    2017-01-15

    Tb{sub x}Dy{sub 1−x}Fe{sub 2}/Pt/Pb(Zr{sub x}, Ti{sub 1−x})O{sub 3} thin films were grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient α{sup Η}{sub ΜΕ} was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large α{sup Η}{sub ΜΕ} of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance. - Highlights: • Magnetoelectric device behaves as a voltage source. • A simple way to subtract eddy currents during the measurement, is proposed.

  13. Development of alloy-film coated dispenser cathode for terahertz vacuum electron devices application

    International Nuclear Information System (INIS)

    Barik, R.K.; Bera, A.; Raju, R.S.; Tanwar, A.K.; Baek, I.K.; Min, S.H.; Kwon, O.J.; Sattorov, M.A.; Lee, K.W.; Park, G.-S.

    2013-01-01

    High power terahertz vacuum electron devices demand high current density and uniform emission dispenser cathode. It was found that the coating of noble metals e.g., Os, Ir, and Re on the surface of tungsten dispenser cathodes enhances the emission capabilities and uniformity. Hence metal coated cathode might be the best candidate for terahertz devices applications. In this study, ternary-alloy-film cathode (2Os:2Re:1 W) and Os coated cathode have been developed and the results are presented. The cathodes made out of this alloy coating showed 1.5 times higher emission and 0.02 eV emission uniformity as compared to those of simply Os coated cathodes which can be used in terahertz devices application.

  14. Development of alloy-film coated dispenser cathode for terahertz vacuum electron devices application

    Energy Technology Data Exchange (ETDEWEB)

    Barik, R. K.; Bera, A. [School of Electrical Engineering and Computer Science, Seoul National University, Seoul (Korea, Republic of); Raju, R. S. [Central Electronics Engineering Research Institute (CEERI), Rajasthan (India); Tanwar, A. K.; Baek, I. K.; Min, S. H.; Kwon, O. J.; Sattorov, M. A. [Department of Physics and Astronomy, Center for THz-Bio Application Systems, and Seoul-Teracom Inc., Seoul National University, Seoul (Korea, Republic of); Lee, K. W. [LIG Nex1, Seoul (Korea, Republic of); Park, G.-S., E-mail: gunsik@snu.ac.kr [School of Electrical Engineering and Computer Science, Seoul National University, Seoul (Korea, Republic of); Department of Physics and Astronomy, Center for THz-Bio Application Systems, and Seoul-Teracom Inc., Seoul National University, Seoul (Korea, Republic of); Advanced Institute of Convergence Technology, Suwon-si, Gyeonggi-do (Korea, Republic of)

    2013-07-01

    High power terahertz vacuum electron devices demand high current density and uniform emission dispenser cathode. It was found that the coating of noble metals e.g., Os, Ir, and Re on the surface of tungsten dispenser cathodes enhances the emission capabilities and uniformity. Hence metal coated cathode might be the best candidate for terahertz devices applications. In this study, ternary-alloy-film cathode (2Os:2Re:1 W) and Os coated cathode have been developed and the results are presented. The cathodes made out of this alloy coating showed 1.5 times higher emission and 0.02 eV emission uniformity as compared to those of simply Os coated cathodes which can be used in terahertz devices application.

  15. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d' Or, Quebec J9P 1Y3 (Canada); Kroeger, J. [NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada); Haddad, T. [Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada); Rosei, F. [Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  16. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    International Nuclear Information System (INIS)

    Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

    2015-01-01

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10 4 and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10 4  s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices

  17. Novel electrochromic devices based on composite films of poly(2,5-dimethoxyaniline)-waterborne polyurethane

    International Nuclear Information System (INIS)

    Yang, C.-H.; Chong, L.-W.; Huang, L.-M.; Lee, Y.-L.; Wen, T.-C.

    2005-01-01

    Waterborne polyurethane (WPU) was spin-coated on indium tin oxide (ITO) coated glass. Poly(2,5-dimethoxyaniline) (PDMA) was deposited using electrochemical polymerization as conducting composite film on the above WPU/ITO electrode and used as an electrode in an electrochromic device assembly. Tungsten oxide (WO 3 ) coated ITO glass was used as the other electrode with LiClO 4 doped gelled polyethylene oxide (PEO) as polymer electrolyte. The configuration of an electrochromic device was assembled: ITO/WPU-PDMA II LiClO 4 -PC-PEO (400,000) II WO 3 /ITO, where PC represents propylene carbonate. The characterization of the single electrodes, ITO/WPU-PDMA composite, ITO/WO 3 , and the device was performed by using cyclic voltammetry. The columbic efficiency (CE) of the ITO/WPU-PDMA composite and ITO/WO 3 electrodes were close to 100%. The optical contrast of the single electrodes and the device were determined by UV-vis spectroelectrochemical studies. A visible contrast in color upon switching the potential from -1.50 to +1.50 V was noticed for the device. The device was pale yellow at -1.5 V and dark green at +1.5 V. The CE of the device was 91%. Double potential chronamperomtry was used to determine the response time of coloring and bleaching processes. The bleaching process was found to be faster than coloring. The stability of the device was established by polarizing the device and recording the UV-vis spectrum in open circuit conditions. Bleaching state is more stable than coloring state

  18. Radiation dose measurements of the insertion devices using radiachromic film dosimeters

    International Nuclear Information System (INIS)

    Alderman, J.; Semones, E.; Job, P. K.

    2004-01-01

    The Advanced Photon Source (APS) uses Nd-Fe-B permanent magnets in the insertion devices to produce x-rays for scientific research [1,2]. Earlier investigations have exhibited varying degrees of demagnetization of these magnets [3] due to irradiation from electron beams [4,5,6], 60 Co γ-rays [5], and high-energy neutrons [7,8]. Radiation-induced demagnetization has been observed in the APS insertion devices [9] and was first measured in December of 2001. Partial demagnetization has also been observed in insertion devices at the European Synchrotron Radiation Facility (ESRF) [4,6], where Nd-Fe-B permanent magnets are also used. Growing concern for the lifetime of APS insertion devices, as well as the permanent magnets that will be used in next-generation, high-power light sources, like the FEL [10,11], resulted from the partial demagnetization observations made at both facilities. This concern in relation to radiation-induced demagnetization spurred a long-term project to measure and analyze the absorbed doses received by the APS insertion devices. The project required a reliable photon high-dose dosimetry technique capable of measuring absorbed doses greater than 10 6 rad, which was not readily available at the APS. Through a collaboration with the National Institute of Standards and Technology (NIST), one such technique using radiachromic films was considered, tested, and calibrated at the APS. This consequently led to the implementation of radiachromic film dosimetry for measuring the absorbed doses received by the insertion devices for each of the APS runs

  19. Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

    2017-06-15

    Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

  20. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Directory of Open Access Journals (Sweden)

    Farzana Aktar Chowdhury

    2015-10-01

    Full Text Available This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP adorned graphene oxide (GO nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW−1. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  1. Lithographically patterned thin activated carbon films as a new technology platform for on-chip devices.

    Science.gov (United States)

    Wei, Lu; Nitta, Naoki; Yushin, Gleb

    2013-08-27

    Continuous, smooth, visibly defect-free, lithographically patterned activated carbon films (ACFs) are prepared on the surface of silicon wafers. Depending on the synthesis conditions, porous ACFs can either remain attached to the initial substrate or be separated and transferred to another dense or porous substrate of interest. Tuning the activation conditions allows one to change the surface area and porosity of the produced carbon films. Here we utilize the developed thin ACF technology to produce prototypes of functional electrical double-layer capacitor devices. The synthesized thin carbon film electrodes demonstrated very high capacitance in excess of 510 F g(-1) (>390 F cm(-3)) at a slow cyclic voltammetry scan rate of 1 mV s(-1) and in excess of 325 F g(-1) (>250 F cm(-3)) in charge-discharge tests at an ultrahigh current density of 45,000 mA g(-1). Good stability was demonstrated after 10,000 galvanostatic charge-discharge cycles. The high values of the specific and volumetric capacitances of the selected ACF electrodes as well as the capacity retention at high current densities demonstrated great potential of the proposed technology for the fabrication of various on-chip devices, such as micro-electrochemical capacitors.

  2. Improving the Validity of Squeeze Film Air-Damping Model of MEMS Devices with Border Effect

    Directory of Open Access Journals (Sweden)

    Cheng Bai

    2014-01-01

    Full Text Available Evaluation of squeezed film air damping is critical in the design and control of dynamic MEMS devices. The published squeezed film air damping models are generally derived from the analytical solutions of Reynolds equation or its other modified forms under the supposition of trivial pressure boundary conditions on the peripheral borders. These treatments ignoring the border effect can not give faithful result for structure with smaller air venting gap or the double-gimbaled structure in which the inner frame and outer one affect the air venting. In this paper, we use Green’s function to solve the nonlinear Reynolds equation with inhomogeneous boundary conditions. For two typical normal motion cases of parallel plate, the analytical models of squeeze film damping force with border effect are established. The viscous and inertial losses with real values and image values acoustic impedance are all included in the model. These models reduced the time consumption while giving satisfactory result. Without multifield coupling analysis, the estimation of the dynamic behavior of MEMS device is also allowed, and the simulation of the system performance is more convenient.

  3. Nonlinear surface impedance of YBCO thin films: Measurements, modeling, and effects in devices

    International Nuclear Information System (INIS)

    Oates, D.E.; Koren, G.; Polturak, E.

    1995-01-01

    High-T c thin films continue to be of interest for passive device applications at microwave frequencies, but nonlinear effects may limit the performance. To understand these effects we have measured the nonlinear effects may limit the performance. To understand these effects we have measured the nonlinear surface impedance Z s in a number of YBa 2 Cu 3 O 7-x thin films as a function of frequency from 1 to 18 GHz, rf surface magnetic field H rf to 1500 Oe, and temperature from 4 K to T c . The results at low H rf are shown to agree quantitatively with a modified coupled-grain model and at high H rf with hysteresis-loss calculations using the Bean critical-state model applied to a thin strip. The loss mechanisms are extrinsic properties resulting from defects in the films. We also report preliminary measurements of the nonlinear impedance of Josephson junctions, and the results are related to the models of nonlinear Z s . The implications of nonlinear Z s for devices are discussed using the example of a five-pole bandpass filter

  4. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Farzana Aktar [Experimental Physics Division, Atomic Energy Centre, 4, Kazi Nazrul Islam Avenue, Dhaka-1000 (Bangladesh); Hossain, Mohammad Abul [Department of Chemistry, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Mohiuddin, Tariq [Department of Physics, College of Science, Sultan Qaboos University, Muscat (Oman); Boby, Monny Akter [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Alam, Mohammad Sahabul, E-mail: msalam@ksu.edu.sa [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Department of Chemical Engineering, College of Engineering & King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  5. Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

    Science.gov (United States)

    Meng, Lei

    Solar energy harvesting through photovoltaic conversion has gained great attention as a sustainable and environmentally friendly solution to meet the rapidly increasing global energy demand. Currently, the high cost of solar-cell technology limits its widespread use. This situation has generated considerable interest in developing alternative solar-cell technologies that reduce cost through the use of less expensive materials and processes. Perovskite solar cells provide a promising low-cost technology for harnessing this energy source. In Chapter two, a moisture-assist method is introduced and studied to facilitate grain growth of solution processed perovskite films. As an approach to achieve high-quality perovskite films, I anneal the precursor film in a humid environment (ambient air) to dramatically increase grain size, carrier mobility, and charge carrier lifetime, thus improving electrical and optical properties and enhancing photovoltaic performance. It is revealed that mild moisture has a positive effect on perovskite film formation, demonstrating perovskite solar cells with 17.1% power conversion efficiency. Later on, in Chapter four, an ultrathin flexible device delivering a PCE of 14.0% is introduced. The device is based on silver-mesh substrates exhibiting superior durability against mechanical bending. Due to their low energy of formation, organic lead iodide perovskites are also susceptible to degradation in moisture and air. The charge transport layer therefore plays a key role in protecting the perovskite photoactive layer from exposure to such environments, thus achieving highly stable perovskite-based photovoltaic cells. Although incorporating organic charge transport layers can provide high efficiencies and reduced hysteresis, concerns remain regarding device stability and the cost of fabrication. In this work, perovskite solar cells that have all solution-processed metal oxide charge transport layers were demonstrated. Stability has been

  6. Electrochromics for smart windows: Oxide-based thin films and devices

    International Nuclear Information System (INIS)

    Granqvist, Claes G.

    2014-01-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  7. Electrochromics for smart windows: Oxide-based thin films and devices

    Energy Technology Data Exchange (ETDEWEB)

    Granqvist, Claes G.

    2014-08-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  8. Production of Inorganic Thin Scintillating Films for Ion Beam Monitoring Devices

    CERN Document Server

    Re, Maurizio; Cosentino, Luigi; Cuttone, Giacomo; Finocchiaro, Paolo; Hermanne, Alex; Lojacono, Pietro A; Ma, YingJun; Thienpont, Hugo; Van Erps, Jurgen; Vervaeke, Michael; Volckaerts, Bart; Vynck, Pedro

    2005-01-01

    In this work we present the development of beam monitoring devices consisting of thin CsI(Tl) films deposited on Aluminium support layers. The light emitted by the scintillating layer during the beam irradiation is measured by a CCD-camera. In a first prototype a thin Aluminium support layer of 6 micron allows the ion beam to easily pass through without significant energy loss and scattering effects. Therefore it turns out to be a non-destructive monitoring device to characterize on-line beam shape and beam position without interfering with the rest of the irradiation process. A second device consists of an Aluminium support layer which is thick enough to completely stop the impinging ions allowing to monitor at the same time the beam profile and the beam current intensity. Some samples have been coated by a 100 Å protective layer to prevent the film damage by atmosphere exposition. In this contribution we present our experimental results obtained by irradiating the samples with proton beams at 8.3 and 62 Me...

  9. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  10. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

    Science.gov (United States)

    Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

    2017-12-01

    We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

  11. A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

    Science.gov (United States)

    Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

    2012-11-02

    Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

  12. The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

    Science.gov (United States)

    Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

    2018-05-01

    Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

  13. A new TLD badge with machine readable ID for fully automated readout

    International Nuclear Information System (INIS)

    Kannan, S. Ratna P.; Kulkarni, M.S.

    2003-01-01

    The TLD badge currently being used for personnel monitoring of more than 40,000 radiation workers has a few drawbacks such as lack of on-badge machine readable ID code, delicate two-point clamping of dosimeters on an aluminium card with the chances of dosimeters falling off during handling or readout, projections on one side making automation of readout difficult etc. A new badge has been designed with a 8-digit identification code in the form of an array of holes and smooth exteriors to enable full automation of readout. The new badge also permits changing of dosimeters when necessary. The new design does not affect the readout time or the dosimetric characteristics. The salient features and the dosimetric characteristics are discussed. (author)

  14. Carrying an anti-nuclear-power badge in the teaching profession

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    The carrying of an anti-nuclear-power badge by a teacher during school hours violates the order to practice reticence in political activities. At the beginning of 1977 some teachers, the plaintiff as well, carried anti-nuclear-power badges, i.e. a round badge with a stylized red sun on a yellow background with the inscription 'Nuclear power - No, thank you'. Following a general direction by the educational authorities, the headmistress forbade plaintiff on 4.11.77 to visibly carry this badge during lessons. This protest having been without success, action was brought with partial success at the Administrative and Higher Administrative Court. The Federal Administrative Court dismissed the case. (orig./HSCH) [de

  15. A scoping review towards the conceptualization of a digital Open Badges ecosystem in South Africa

    CSIR Research Space (South Africa)

    Motheeram, Preia

    2016-11-01

    Full Text Available relevant and rewarding pathways for learners. Open Badges can provide the infrastructure to facilitate this recognition of skills and achievements. In the absence of specific skills accreditation for informal skills and small scale competency development...

  16. Superciliums in white-eared hummingbirds as badges of status signaling dominance.

    Science.gov (United States)

    González-García, Juan Manuel; Lara, Carlos; Quesada, Javier; Chávez-Zichinelli, Carlos A; Serrano-Meneses, Martín A

    2018-04-03

    The role of badges as indicators of contest ability has been previously described. In hummingbirds, the exhibition of a badge is expected to save energy expenditure in agonistic interactions and to favor energy intake. Here, we investigate whether variable supercilium size in the white-eared hummingbird has a role in dominance status signaling. Firstly, 45 hummingbird males were captured and their superciliums were photographed to investigate variation in size and any possible allometric relationships. Secondly, 42 male birds were used to analyze whether the supercilium has a role in dominance status signaling in a dyadic contest. We found that supercilium size varied continuously but that despite variability between individuals, there was no relationship between supercilium size and body size. However, our dyad experiment indicated that birds with larger badges were able to make more visits to the feeders than individuals with smaller badges. We suggest a status signaling function of the supercilium.

  17. Electrochemical investigation of electrochromic devices based on NiO and WO3 films using different lithium salts electrolytes

    International Nuclear Information System (INIS)

    Wei, Youxiu; Chen, Mu; Liu, Weiming; Li, Lei; Yan, Yue

    2017-01-01

    Highlights: •ECDs based on NiO and WO 3 films using different electrolytes were fabricated. •Effect of different electrolytes on films and ECDs was investigated. •Applied voltage distribution on NiO and WO 3 electrodes in an ECD was studied. •Voltage distribution on films was unbalanced and associated with electrolyte. •Films have different impedance behavior in different states and electrolytes. -- Abstract: Electrochromic devices (ECDs) with different liquid electrolytes were fabricated using NiO film as counter electrode, WO 3 film as working electrode. The effect of liquid electrolytes containing different lithium salts (LiClO 4 , LiPF 6 , LiTFSI) on films and ECDs was investigated, such as transmittance change, charge density, memory effect and cyclic stability. Films or ECDs using LiPF 6 electrolyte have excellent electrochromic properties but low cyclic stability, compared with LiClO 4 and LiTFSI electrolytes. In order to deeply understand the effect of electrolyte on films and devices, the voltage distribution of films based on an analog cell and electrochemical impedance spectroscopy (EIS) were measured and analyzed in different lithium salts electrolytes. Results show that voltage distribution and EIS characteristics of films have obvious difference in liquid LiClO 4 , LiPF 6 and LiTFSI electrolytes. Voltage distribution on NiO and WO 3 films is unbalanced and the impedance of films in bleached and colored states is different in the same electrolyte.

  18. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    Science.gov (United States)

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  19. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  20. Fabrication and study of sol-gel ZnO films for use in Si-based heterojunction photovoltaic devices

    Directory of Open Access Journals (Sweden)

    Daniya Mukhamedshina

    2017-12-01

    Full Text Available This paper considers the use of zinc oxide thin films prepared via the sol-gel route as an n-type layer in heterojunction ZnO/Si solar cells. The ZnO films were prepared via a simple spin-coating technique using zinc acetate dihydrate as a zinc precursor, isopropanol as a solvent and monoethanolamine as a stabilizing agent. Optical, structural and morphological properties of ZnO were investigated for thin films grown from sol-gel solutions with different concentrations both on glass and silicon substrates. As such, a distribution of crystallite sizes and surface topology parameters corresponding to various zinc acetate dihydrate concentrations were obtained to elucidate optimal film deposition conditions. Correlation between thin film morphology and structural characteristics of ZnO thin films was made based on atomic-force microscopy studies. Finally, our results on fabrication, characterization and simulation of ZnO/Si heterojunctions for use as photovoltaic devices are presented. Although noticeable rectifying and photovoltaic properties were observed for Al/Si/ZnO/Ti/Au devices, there appears to exist a considerable room for device improvement with simulation studies suggesting that efficiencies of the order of 24% may be obtained for devices with optimal silicon wafer passivation, i.e. with lifetimes of the order of 1000 μs.

  1. Photon and neutron doses of the personnel using moisture and density measurement devices

    Energy Technology Data Exchange (ETDEWEB)

    Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V. [Greek Atomic Energy Commission, Agia Paraskevi, Attiki, 60092 (Greece)

    2006-07-01

    The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a {sup 137}Cs source for density measurements and an {sup 241}Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

  2. Photon and neutron doses of the personnel using moisture and density measurement devices

    International Nuclear Information System (INIS)

    Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V.

    2006-01-01

    The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a 137 Cs source for density measurements and an 241 Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

  3. Studies on applications of functional organic-thin-films for lithography on semiconductor device production

    International Nuclear Information System (INIS)

    Ogawa, Kazufumi

    1988-12-01

    This report describes some experimental results of studies in an attempt to contribute to the development of ultra-fine lithography which is used for the manufacture of semiconductor devices with design rule below 0.5 μm, and contains (1) manufacture of the exposure apparatus, (2) establishment of the resist process technology, and (3) preparation of the resist materials. The author designed and manufactured the KrF excimer laser stepper which is supposed to be most promising for practical uses. In the resist processing technology, the water-soluble contrast enhanced lithography (CEL) process was developed and this process has advantages is that high pattern contrast and large focus depth latitude were easily obtained. Finally, for resist materials, use of Langmuir-Blodgett (LB) films was investigated since the LB technique provides the method to prepare extremely thin organic films which are uniform in molecular level, and the reaction mechanism of the LB films of unsaturated compounds under irradiation with high energy beams was elucidated. (author)

  4. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

    Science.gov (United States)

    Franklin, Aaron D

    2015-08-14

    For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

  5. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    Science.gov (United States)

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  6. Thin Film Energy Storage Device with Spray‐Coated Sliver Paste Current Collector

    Directory of Open Access Journals (Sweden)

    Seong Man Yoon

    2017-12-01

    Full Text Available This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass‐manufacturable spray‐coating technology enables the fabrication of two different half‐cell electric double layer capacitors (EDLC with a spray‐coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half‐cell EDLC with the spray‐coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half‐cell EDLC with the spray‐coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from −0.5 V to 0.5 V, the spray‐coated thin film energy storage device exhibits a better performance.

  7. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-06-25

    Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

  8. BiFeO3 epitaxial thin films and devices: past, present and future

    Science.gov (United States)

    Sando, D.; Barthélémy, A.; Bibes, M.

    2014-11-01

    The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

  9. Feasibility study on using three element TLD badge based on CaSO4:Dy as environmental dosimeter

    International Nuclear Information System (INIS)

    Choudhary, Sreeletha; BharathiLashmi, G.V.; Yasotha, E.; Devanathan, P.S.; Annalakshmi, O.; Mathiyarasu, R.

    2018-01-01

    A three element thermoluminescence badge based on CaSO 4 :Dy is used for personnel monitoring in India. The three discs of the badge is heated in sequential manner by hot nitrogen gas and from the amount of light emitted while heating, the doses are estimated. This badge was redesigned as a two element system and is used for environmental monitoring. Though the two element badge has some advantages, the software used for processing of TLDs in the semiautomatic reader has to be modified and separate badges has to be maintained for environmental dose measurements. In this work a feasibility study has been carried out to use the three element personnel monitoring badge itself for environmental monitoring also. This study was also carried out to understand the abnormal pattern of the glow curves observed in some field cards

  10. The Effect of Achievement Badges on Students’ Behavior: An Empirical Study in a University-Level Computer Science Course

    Directory of Open Access Journals (Sweden)

    Lasse Hakulinen

    2015-02-01

    Full Text Available Achievement badges are a form of gamification that are used in an attempt to increase user engagement and motivation in various systems. A badge is typically a graphical icon that appears as a reward for the user after reaching an achievement but that has no practical value. In this study, we describe and evaluate the use of achievement badges in the ANONYMOUS online learning environment where students solve interactive, automatically assessed exercises in a Data Structures and Algorithms course throughout the semester. We conducted an experiment where the students (N=281 were randomly divided into a treatment and a control group, with and without achievement badges. Students in the treatment group were awarded achievement badges, for example, for solving exercises on the first attempt, doing exercises early, or solving all the exercises in a round with full points. Grading was the same for both groups, i.e. collecting badges did not affect the final grade, even though the exercise points themselves did. Students’ activity in ANONYMOUS was logged in order to find out whether the achievement badges had an effect on their behavior. We also collected numerical and open-ended feedback in order to find out students’ attitudes towards the badges. Our results show that achievement badges can be used to affect students’ behavior. Statistically significant differences were observed in the time used per exercise, number of sessions, total time, and normalized total number of badges. Furthermore, the majority of the students reported being motivated by the badges. Based on our findings, achievement badges seem to be a promising method to motivate students and to encourage desired study practices.

  11. Calibration of the indium foil used for criticality accident dosimetry in the UCC-ND employee identification badge

    International Nuclear Information System (INIS)

    Ryan, M.T.; Butler, H.M.; Gupton, E.D.; Sims, C.S.

    1982-05-01

    The UCC-ND Employee Identification Badge contains an indium foil disc that is intended for use as a dosimetry screening device in the event of a criticality accident. While it is recognized that indium is not a precise mixed neutron-gamma dosimeter, its activation by neutrons provides adequate means for separating potentially exposed persons into three groups. These groups are: (1) personnel exposed below annual dose limits, (2) personnel exposed above annual dose limits but below 25 rem, and (3) personnel exposed above 25 rem. This screening procedure is designed to facilitate dosimeter processing in order to meet regulatory reporting requirements. A quick method of interpreting induced activity measurements is presented and discussed

  12. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

    International Nuclear Information System (INIS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-01-01

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

  13. Stability and Performance of CsPbI2Br Thin Films and Solar Cell Devices.

    Science.gov (United States)

    Mariotti, Silvia; Hutter, Oliver S; Phillips, Laurie J; Yates, Peter J; Kundu, Biswajit; Durose, Ken

    2018-01-31

    In this manuscript, the inorganic perovskite CsPbI 2 Br is investigated as a photovoltaic material that offers higher stability than the organic-inorganic hybrid perovskite materials. It is demonstrated that CsPbI 2 Br does not irreversibly degrade to its component salts as in the case of methylammonium lead iodide but instead is induced (by water vapor) to transform from its metastable brown cubic (1.92 eV band gap) phase to a yellow phase having a higher band gap (2.85 eV). This is easily reversed by heating to 350 °C in a dry environment. Similarly, exposure of unencapsulated photovoltaic devices to water vapor causes current (J SC ) loss as the absorber transforms to its more transparent (yellow) form, but this is also reversible by moderate heating, with over 100% recovery of the original device performance. NMR and thermal analysis show that the high band gap yellow phase does not contain detectable levels of water, implying that water induces the transformation but is not incorporated as a major component. Performances of devices with best efficiencies of 9.08% (V OC = 1.05 V, J SC = 12.7 mA cm -2 and FF = 68.4%) using a device structure comprising glass/ITO/c-TiO 2 /CsPbI 2 Br/Spiro-OMeTAD/Au are presented, and further results demonstrating the dependence of the performance on the preparation temperature of the solution processed CsPbI 2 Br films are shown. We conclude that encapsulation of CsPbI 2 Br to exclude water vapor should be sufficient to stabilize the cubic brown phase, making the material of interest for use in practical PV devices.

  14. Analysis of reaction products of food contaminants and ingredients: bisphenol A diglycidyl ether (BADGE) in canned foods.

    Science.gov (United States)

    Coulier, Leon; Bradley, Emma L; Bas, Richard C; Verhoeckx, Kitty C M; Driffield, Malcolm; Harmer, Nick; Castle, Laurence

    2010-04-28

    Bisphenol A diglycidyl ether (BADGE) is an epoxide that is used as a starting substance in the manufacture of can coatings for food-contact applications. Following migration from the can coating into food, BADGE levels decay and new reaction products are formed by reaction with food ingredients. The significant decay of BADGE was demonstrated by liquid chromatographic (LC) analysis of foodstuffs, that is, tuna, apple puree, and beer, spiked with BADGE before processing and storage. Life-science inspired analytical approaches were successfully applied to study the reactions of BADGE with food ingredients, for example, amino acids and sugars. An improved mass balance of BADGE was achieved by selective detection of reaction products of BADGE with low molecular weight food components, using a successful combination of stable isotopes of BADGE and analysis by LC coupled to fluorescence detection (FLD) and high-resolution mass spectrometric (MS) detection. Furthermore, proteomics approaches showed that BADGE also reacts with peptides (from protein digests in model systems) and with proteins in foods. The predominant reaction center for amino acids, peptides, and proteins was cysteine.

  15. Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

    Science.gov (United States)

    Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

    2017-11-01

    Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

  16. Acidity-Controlled Conducting Polymer Films for Organic Thermoelectric Devices with Horizontal and Vertical Architectures

    Science.gov (United States)

    Lee, Woongki; Song, Myeonghun; Park, Soohyung; Nam, Sungho; Seo, Jooyeok; Kim, Hwajeong; Kim, Youngkyoo

    2016-09-01

    Organic thermoelectric devices (OTEDs) are recognized one of the next generation energy conversion platforms because of their huge potentials for securing electricity continuously from even tiny heat sources in our daily life. The advantage of OTEDs can be attributable to the design freedom in device shapes and the low-cost fabrication by employing solution coating processes at low temperatures. As one of the major OTE materials to date, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has been used, but no study has been yet carried out on its acidity control even though the acidic components in OTEDs can seriously affect the device performance upon operation. Here we demonstrate that the addition of aniline (a weak base) can control the acidity of PEDOT:PSS and enhance the performance of OTEDs. In particular, the vertical OTEDs with aniline-doped PEDOT:PSS films (active area = 1.0 cm2) could continuously generate electricity (0.06 nW) even at low temperatures (<38 °C) when they were mounted on a desk lamp (power = 24 W).

  17. Y1Ba2Cu3O(7-delta) thin film dc SQUIDs (superconducting quantum interference device)

    Science.gov (United States)

    Racah, Daniel

    1991-03-01

    Direct current superconducting quantum interferometers (SQUIDs) based on HTSC thin films have been measured and characterized. The thin films used were of different quality: (1) Granular films on Sapphire substrates, prepared either by e-gun evaporation, by laser ablation or by MOCVD (metal oxide chemical vapor deposition), (2) Epitaxial films on MgO substrates. Modulations of the voltage on the SQUIDs as a function of the applied flux have been observed in a wide range of temperatures. The nature of the modulation was found to be strongly dependent on the morphology of the film and on its critical current. The SQUIDs based on granular films were relatively noisy, hysteretic and with a complicated V-phi shape. Those devices based on low quality (lowIc) granular films could be measured only at low temperatures (much lower than 77 K). While those of higher quality (granular films with high Ic) could be measured near to the superconductive transition. The SQUID based on high quality epitaxial film was measured near Tc and showed an anomalous, time dependent behavior.

  18. Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Colpitts, T

    1997-07-01

    Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

  19. Thin film-based optically variable security devices: From passive to active

    Science.gov (United States)

    Baloukas, Bill

    the possibility of creating various surprising optical effects. Such a system is obviously more challenging to duplicate due to its complexity, but also adds a second level of authentication accessible to specialized personnel. By designing a metameric filter which matches either the bleached or colored state of an electrochromic device, I show that one can generate two hidden image effects: one which appears when the structure is tilted, and the other one which disappears when the electrochromic material is colored under an applied potential. In this specific study, I present an example of a filter that is metameric with the colored state of a tungsten-oxide-based Deb-type electrochromic device. A hybrid device such as presented in the previous study is clearly interesting from a prototype point of view. Unfortunately, having to design and fabricate two individual components would make such a security feature very expensive. Consequently, my goal was to combine both the color shift and electrochromic color change into a single structure. The following study thus demonstrates, that by designing and fabricating an interference filter based on dense and porous WO3, this goal can be achieved. Finally, a second method of fabricating electrochromic interference filters is proposed which results in a significant decrease in the total numbers of layers of the filters. Replacing the porous WO3 films by a WO 3/SiO2 composite allows for much lower refractive indices to be obtained thus resulting in a larger index contrast (0.61 versus 0.22 in the previous study). In this study, I first explore the physical and electrochromic properties of WO3/SiO2 mixtures. I then combine high and low index films in tandem configurations to observe the bleaching/ coloration dynamics. To account for the poor performance of the ITO|Composite|WO 3 film configuration, I also present an explanation based on the differences in electron diffusion coefficients of the films. I conclude this study with

  20. Perovskite Solar Cells: From the Atomic Level to Film Quality and Device Performance.

    Science.gov (United States)

    Saliba, Michael; Correa-Baena, Juan-Pablo; Grätzel, Michael; Hagfeldt, Anders; Abate, Antonio

    2018-03-01

    Organic-inorganic perovskites have made tremendous progress in recent years due to exceptional material properties such as high panchromatic absorption, charge carrier diffusion lengths, and a sharp optical band edge. The combination of high-quality semiconductor performance with low-cost deposition techniques seems to be a match made in heaven, creating great excitement far beyond academic ivory towers. This is particularly true for perovskite solar cells (PSCs) that have shown unprecedented gains in efficiency and stability over a time span of just five years. Now there are serious efforts for commercialization with the hope that PSCs can make a major impact in generating inexpensive, sustainable solar electricity. In this Review, we will focus on perovskite material properties as well as on devices from the atomic to the thin film level to highlight the remaining challenges and to anticipate the future developments of PSCs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Transparent EuTiO3 films: a possible two-dimensional magneto-optical device

    Science.gov (United States)

    Bussmann-Holder, Annette; Roleder, Krystian; Stuhlhofer, Benjamin; Logvenov, Gennady; Lazar, Iwona; Soszyński, Andrzej; Koperski, Janusz; Simon, Arndt; Köhler, Jürgen

    2017-01-01

    The magneto-optical activity of high quality transparent thin films of insulating EuTiO3 (ETO) deposited on a thin SrTiO3 (STO) substrate, both being non-magnetic materials, are demonstrated to be a versatile tool for light modulation. The operating temperature is close to room temperature and allows for multiple device engineering. By using small magnetic fields birefringence of the samples can be switched off and on. Similarly, rotation of the sample in the field can modify its birefringence Δn. In addition, Δn can be increased by a factor of 4 in very modest fields with simultaneously enhancing the operating temperature by almost 100 K.

  2. Development of Micron-Resolved Electron Spectroscopy to Study Organic Thin Films in Real Devices

    International Nuclear Information System (INIS)

    Wang, C.-H.; Fan, L.-J.; Yang, Y.-W.; Su, J.-W.; Chan, S.-W.; Chen, M.-C.

    2010-01-01

    A straightforward application of an electron energy analyzer equipped with an image detector to micron-resolved electron spectroscopic studies of organic thin film devices is reported. The electron spectroscopies implemented include synchrotron-based UPS, XPS, and Auger yield NEXAFS. Along the non-energy-dispersion direction of the analyzer, a spatial resolution of ∼40 μm is obtained through the employment of entrance slits, electrostatic lenses and segmented CCD detector. One significant benefit offered by the technique is that the electronic transport and electronic structure of the same micron-sized sample can be directly examined. The example illustrated is a top-contact organic field effect transistor (OFET) fabricated from semiconducting triethylsilylethynyl anthradithiophene and gold electrodes. It is found that an extensive out-diffusion of gold atoms to adjacent conduction channels takes place, presumably due to the inability of soft organic materials in dissipating the excess energy with which gaseous Au atoms possess.

  3. Electrical characterization of organic thin film transistors and alternative device architectures

    Science.gov (United States)

    Newman, Christopher R.

    In the last 10--15 years, organic semiconductors have evolved from experimental curiosities into viable alternatives for practical applications involving large-area and low-cost electronics such as display backplanes, electronic paper, radio frequency identification (RFID) tags, and solar cells. Many of the initially-stated goals in this field have been achieved; organic semconductors have demonstrated performance comparable to or greater than amorphous silicon (a-Si), the entrenched technology for most of the applications listed above. At present, the major obstacles remaining to commercialization of devices based on organic semiconductors involve material stability, processing considerations and optimization of the other device components (e.g. metal contacts and dielectric materials). Despite these technical achievements, significant gaps remain in our understanding of the underlying transport physics in these devices. This thesis summarizes experiments performed on organic field-effect transistors (OFETs) in an attempt to address some of these knowledge gaps. The FET, in addition to being a very useful device for practical applications (such as the driving elements in pixel backplanes), is also a very flexible architecture from an experimental standpoint. The presence of a capacitively-coupled gate electrode allows the investigation of transport physics as a function of carrier concentration. For devices in which non-idealities (i.e. carrier traps) largely dictate the observed characteristics, this is a very useful feature. Although practical OFETs are fabricated as conventional single-gate structures on an organic thin film (OTFTs), more exotic structures can often provide insights that standard OTFTs cannot. Specifically, single-crystal OFETs allow the investigation of carrier transport in the absence of grain boundaries, and double-gated OTFTs facilitate the investigation and comparison of properties across two discrete interfaces. One of the remaining

  4. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

    Science.gov (United States)

    Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

    2013-11-08

    Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  5. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  6. Construction of pulse badge for upper extremities dosimetry in nuclear medicine

    International Nuclear Information System (INIS)

    Cunha, Cledison de Jesus; Souza, Divanizia do Nascimento

    2005-01-01

    In the manipulation of radioactive materials in nuclear medicine service the body parts of the worker who more is displayed to the ionizing radiation is hands, forearm and arm. Therefore it is necessary to developing badges for easy reproduction monitoring and low cost to determine the doses level radiation received by the worker in these extremities. The aim of this work is to investigation of a new pulse badge, that is developed with thermoluminescent detectors of CaSO 4 :Dy (TLD) in a small plate of acrylic, perforated cardboard to deposit the TLD. This set was involved in plastic to protect of humidity and other harmful ambient factors, moreover, a bracelet was inserted, adaptable for any worker. This badge had been gotten resulted satisfactory, with a reply to the enough dose for a dosimetric evaluation. (author)

  7. Influence of iodine on the electrical and photoelectrical properties of zinc phthalocyanine thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, G.D. [Jodhpur Univ. (India). Dept. of Physics; Sangodkar, S.G. [Jodhpur Univ. (India). Dept. of Physics; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur (Raj.) (India)

    1996-11-01

    The electrical and photovoltaic properties of the zinc phthalocyanine (ZnPc) and I{sub 2} doped ZnPc thin films, sandwiched between indium tin oxide (ITO) and Al electrodes, were investigated. Doping with iodine brings adequate changes in the characteristics of the device. The devices constitute a metal-insulator-semiconductor (MIS) structure, in which depletion layer is formed in ZnPc, near Al-Al{sub 2}O{sub 3}/ZnPc. The depletion layer width and potential barrier height decrease with I{sub 2} doping. The charge transport phenomenon at higher voltage range appears to be space charge limited conduction (SCLC), in the presence of the discrete trapping level. The position of Fermi level shifts toward the valence band edge, which indicates that I{sub 2} doping increases the P-type conductivity. Various electrical and photovoltaic parameters were determined from the J-V and C-V analysis. The influence of the I{sub 2} doping has been discussed in detail. (orig.)

  8. Highly transparent and rollable PVA-co-PE nanofibers synergistically reinforced with epoxy film for flexible electronic devices.

    Science.gov (United States)

    Xiong, Bing; Zhong, Weibing; Zhu, Qing; Liu, Ke; Li, Mufang; Sun, Gang; Wang, Dong

    2017-12-14

    The development of electronics towards a more functions-integrated, flexible and stretchable direction requires mechanically flexible substrates with high thermal and dimensional stability and optical transparency. Herein, rolls of an optically transparent PVA-co-PE nanofibrous membrane/epoxy composite with synergistically enhanced thermal stability, very low CTE, and outstanding mechanical properties are reported. The nanoscale size, the unique inter-stack structure, and the strong interfacial interactions between the PVA-co-PE nanofibers and the epoxy contribute to the synergistic effects. Because of the match between the refractive index (RI) of the PVA-co-PE nanofibers and the epoxy matrix, the visible light transmittance of nanocomposite film could be as high as 85% and the composite film was still optically transparent with a nanofiber loading content of up to 61.7 wt%. The break strength and compliance matrix of the composite film with a high fiber loading of 61.7 wt% increased by 2.3 times of that of the neat epoxy film and exceeded 3000 m 2 N -1 , respectively. PVA-co-PE nanofibers have a very low CTE value (3.634 × 10 -6 K -1 ) and could be applicable as a reinforcement to reduce the thermal expansion of epoxy. Furthermore, we developed a flexible alternating current electroluminescent (ACEL) device based on the transparent composite film and the experimental results showed that the transparent composite film could serve as substrate for flexible electronic devices. In addition, their electrical and optical properties were evaluated.

  9. Development of a Handmade Conductivity Measurement Device for a Thin-Film Semiconductor and Its Application to Polypyrrole

    Science.gov (United States)

    Seng, Set; Shinpei, Tomita; Yoshihiko, Inada; Masakazu, Kita

    2014-01-01

    The precise measurement of conductivity of a semiconductor film such as polypyrrole (Ppy) should be carried out by the four-point probe method; however, this is difficult for classroom application. This article describes the development of a new, convenient, handmade conductivity device from inexpensive materials that can measure the conductivity…

  10. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  11. Analysis of reaction products of food contaminants and ingredients: Bisphenol A diglycidyl ether (BADGE) in canned foods

    NARCIS (Netherlands)

    Coulier, L.; Bradley, E.L.; Bas, R.C.; Verhoeckx, K.C.M.; Driffield, M.; Harmer, N.; Castle, L.

    2010-01-01

    Bisphenol A diglycidyl ether (BADGE) is an epoxide that is used as a starting substance in the manufacture of can coatings for food-contact applications. Following migration from the can coating into food, BADGE levels decay and new reaction products are formed by reaction with food ingredients. The

  12. Response of TLD badge for the estimation of exposure conditions in diagnostic x-ray departments - use of lead aprons

    International Nuclear Information System (INIS)

    Pradhan, A.S.; Chatterjee, S.; Bakshi, A.K.

    2002-01-01

    The present study was undertaken to ascertain the conditions of exposure of the TLD badge and to evaluate the inaccuracy involved in the estimation of dose received by the worker using an averaged lead apron transmission factor for the use of the badge above lead apron

  13. Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

    Science.gov (United States)

    Fan, Wei

    To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

  14. Modeling the instability behavior of thin film devices: Fermi Level Pinning

    Science.gov (United States)

    Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

    2018-05-01

    We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

  15. Device for film deposition and implantation of ions inside pipes of low diameter

    International Nuclear Information System (INIS)

    Pogrebnjak, A.D.; Perekrjostov, V.I.; Tyurin, Yu.N.; Wood, B.P.

    2002-01-01

    Two principally new devices, which can be applied to deposit coatings inside the pipes of low diameter, have been developed. The thickness of coatings and films can be varied. To deposit coatings of a low thickness (about 2 nm) on inside pipe walls using a vacuum-arc source and a sputtering device, which is composed of the pipe applied for anode cooling, the constant magnet, the magnetic circuit, the anode, the cathode, the pipe subjected for coating deposition, the cathode holder, etc. Using this device, we have deposited TiC, Ta, Cr, TiN coatings of various thickness ranging from scores of nano-meters to several micro-meters and with very good adhesion to the substrate. To increase adhesion, we applied 10 to 20 kV voltage during ion implantation to the substrate. To study element and structure composition, we applied RBS, TEM, SEM, XRD analyses, micro-hardness, wear resistance tests and also those for corrosion resistance in acid media. Another version of the source was based on the pulsed plasma-detonation technology and applied an evaporating electrode (for implantation) and a powder, which was injected into a plasma jet. The jet velocity reached several kilometers per second. Current of several kilo-amps passed through the plasma jet and increased its energy. The produced in this way coating thickness reached 30 to 400 micro-meter. Application of the vacuum-arc source for subsequent coating deposition allowed us to improve the servicing characteristics of surface layers. We have deposited NiAl, CoAl, A1 2 O 3 , WC-Co, Hastelloy and stainless steel SS316L

  16. Toward High-Performance Coatings for Biomedical Devices: Study on Plasma-Deposited Fluorocarbon Films and Ageing in PBS

    Directory of Open Access Journals (Sweden)

    Diego Mantovani

    2010-03-01

    Full Text Available High performance coatings tailored to medical devices represent a recognised approach to modulate surface properties. Plasma-deposited fluorocarbon films have been proposed as a potential stent coating. Previous studies have shown promising adhesion properties: the 35 nm-thick film sustained plastic deformation up to 25% such as induced during the clinical implantation. In this study, the compositional and morphological changes of plasma-deposited fluorocarbon films were examined during ageing in a pseudo-physiological medium, a phosphate buffer solution (PBS, by angle-resolved XPS, FT-IR data and AFM images. The evolution of the ageing process is discussed: defluorination and crosslinking yielded an oxidized protective top layer onto the films, which showed further degradation.

  17. Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

    Directory of Open Access Journals (Sweden)

    C. C. Huang

    2012-01-01

    Full Text Available Germanium antimony (Ge-Sb thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD. Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM with energy dispersive X-ray analysis (EDX and X-ray diffraction (XRD techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

  18. Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

    Science.gov (United States)

    Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

    1998-01-01

    Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

  19. Studies on α-Al2O3: C based optically stimulated luminescence badge for eye lens monitoring applications

    International Nuclear Information System (INIS)

    Kumar, Munish; Kulkarni, M.S.; Ratna, P.; Gaikwad, N.; Tripathi, S.M.; Sharma, S.D.; Babu, D.A.R.; Bhatnagar, Amit; Muthe, K.P.; Sharma, D.N.

    2014-01-01

    The prototype two element eye-lens dosimeter badge based on indigenously developed α-Al 2 O 3 : C optically stimulated luminescence dosimeter was investigated comprehensively for its suitability for eye-lens monitoring applications. The badge is calibrated to measure the eye-lens dose in terms of H p (3). The minimum measurable dose using the eye-lens dosimeter badge is observed to be ∼ 35 μSv. This prototype eye-lens dosimeter badge was found to be suitable for measuring doses from X-rays, beta and gamma radiations to the eye-lens. The satisfactory performance of the prototype two element eye-lens dosimeter badge along with its attractive features such as multiple readout, less processing time, very good beta response uniquely position it for monitoring the eye-lens dose are presented. (author)

  20. Improvement in fatigue property for a PZT ferroelectric film device with SRO electrode film prepared by chemical solution deposition

    International Nuclear Information System (INIS)

    Miyazaki, H.; Miwa, Y.; Suzuki, H.

    2007-01-01

    PZT films with (1 0 0) and (1 1 0) orientation were prepared by spin coating using the chemical solution deposition (CSD) method on an SRO/Si or a Pt/Ti/SiO 2 /Si substrate. The remnant polarization and the saturation polarization of the PZT/SRO/Si film were 21 and 35 μC/cm 2 , and those of the PZT/Pt/Ti/SiO 2 /Si film were 20 and 31 μC/cm 2 . The remnant polarization of the PZT/SRO/Si film maintained more than 10 8 switching cycles, and the fatigue property was observed for the PZT film fabricated on the Pt/Ti/SiO 2 /Si electrode

  1. Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

    Science.gov (United States)

    Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

    2017-12-01

    Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

  2. Fabrication of fullerene nano-strucutres in mixed films and devices utilizing fullerene nano-structures

    KAUST Repository

    Zhong, Yufei

    2017-04-06

    Embodiments provide methods for controlling crystallization of fullerene compounds in mixed films comprising one or more polymers. Methods can include depositing fullerene mixed films comprising one or more polymers on crystalline fullerene substrates and annealing the deposited mixed films. Methods can further include one or more of exposing the annealed mixed film to UV light, and washing the annealed mixed film with a solvent. Fullerene compounds can include one or more of PCBM, PCBNB, and PCBA.

  3. Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

    Energy Technology Data Exchange (ETDEWEB)

    Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

    2017-08-17

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

  4. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    Science.gov (United States)

    Zheng, Maxwell S.

    In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of >500 mum and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ˜12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ˜795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an

  5. General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

    KAUST Repository

    Xia, Chuan

    2016-12-30

    We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

  6. Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

    International Nuclear Information System (INIS)

    Tuğluoğlu, Nihat; Barış, Behzad; Gürel, Hatice; Karadeniz, Serdar; Yüksel, Ömer Faruk

    2014-01-01

    Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U ) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions

  7. Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

    2014-01-05

    Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

  8. Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

    Science.gov (United States)

    Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

    2013-04-01

    ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

  9. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    Science.gov (United States)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  10. Chemically fabricated LiFePO{sub 4} thin film electrode for transparent batteries and electrochromic devices

    Energy Technology Data Exchange (ETDEWEB)

    Béléké, Alexis B. [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Department of Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 rue University, Montréal, QC H3A 2B2 (Canada); Faure, Cyril [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Röder, Manuel [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Hovington, Pierre [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Posset, Uwe [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Guerfi, Abdelbast [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Zaghib, Karim, E-mail: zaghib.karim@ireq.ca [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada)

    2016-12-15

    Graphical abstract: Simplified diagram of the novel sol-gel approach of preparation of colorless and transparent LiFePO{sub 4} thin film electrode. - Highlights: • Novel sol-gel synthesis of colorless LFP thin film electrode for transparent Li-ion battery. • High performance of the electrode at various current densities: 5, 10, 20, 50 and 100 μA/cm{sup 2}. • LFP nanoparticles exhibit an excellent electro-activity. • Colorless LFP thin film shows a transmittance above 80% versus FTO. • Higher transmittance of LFP electrode a potential candidate for electrochromic devices. - Abstract: We report a new sol-gel approach of synthesis of LiFePO{sub 4} (LFP) thin film and its application as cathode materials for transparent Li-ion battery in half-cell configuration. LFP thin films were obtained from an alcoholic colloidal suspension of iron acetylacetonate (Fe(AcAc){sub 3}) and aqueous lithium dihydrogen phosphate (LiH{sub 2}PO{sub 4}) deposited on fluorine tin oxide (FTO) glass substrate, followed by heating at 450 °C under nitrogen gas for 1 h. X-ray diffraction (XRD) confirmed that the LFP films have an orthorhombic crystal system with space group Pnma (62). Scanning electron microscopy (SEM) shows spherical LFP nanoparticles aggregates homogenously deposited all over the surface of FTO substrate containing 3-D open pores. The electrochemical behaviors of thin film vs Li/Li{sup +} cell were investigated by cyclic voltammetry and galvanostatic charge-discharge measurements. The cycle life was evaluated by running 1000 cycles of charge-discharge at a current density of 20 μA/cm{sup 2}. The transmission spectra reveal 85–90% of transparency versus FTO as reference, which makes it a potential candidate as a complementary electrode in electrochromic devices (ECDs).

  11. Digital Badges for Staff Training: Motivate Employees to Learn with Micro-Credentials

    Science.gov (United States)

    Copenhaver, Kimberly; Pritchard, Liz

    2017-01-01

    Integrating micro-credentialing into employee training programs offers libraries an innovative and individualized way to recognize and certify learning and achievement. Digital badges provide a low-cost initiative to support learning benefiting both the individual and institution, offering evidence of skill development that transcends the library…

  12. The Effect of Badges on the Engagement of Students with Special Educational Needs: A Case Study

    Science.gov (United States)

    Sitra, Ourania; Katsigiannakis, Vangelis; Karagiannidis, Charalampos; Mavropoulou, Sofia

    2017-01-01

    This paper addresses the perceived benefits from gamification in the context of special education. It presents the findings of a study evaluating the effects of a specific gamification element (badges) on the engagement of five students with special learning needs, through online courses developed on the Moodle Learning Management System (LMS).…

  13. Perceptions and Uses of Digital Badges for Professional Learning Development in Higher Education

    Science.gov (United States)

    Dyjur, Patti; Lindstrom, Gabrielle

    2017-01-01

    Few instructors in higher education have completed a formal teaching program and, therefore, rely on informal professional development opportunities to enhance their teaching practice. Micro-credentialing in the form of digital badges is one way in which instructors can document their non-credit learning and accomplishments. This mixed methods…

  14. Learning Analytics and Digital Badges: Potential Impact on Student Retention in Higher Education

    Science.gov (United States)

    Mah, Dana-Kristin

    2016-01-01

    Learning analytics and digital badges are emerging research fields in educational science. They both show promise for enhancing student retention in higher education, where withdrawals prior to degree completion remain at about 30% in Organisation for Economic Cooperation and Development member countries. This integrative review provides an…

  15. Fabrication of fullerene nano-strucutres in mixed films and devices utilizing fullerene nano-structures

    KAUST Repository

    Zhong, Yufei; Amassian, Aram; Tajima, Keisuke

    2017-01-01

    Embodiments provide methods for controlling crystallization of fullerene compounds in mixed films comprising one or more polymers. Methods can include depositing fullerene mixed films comprising one or more polymers on crystalline fullerene

  16. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  17. Reduced graphene oxide and vertically aligned carbon nanotubes superhydrophilic films for supercapacitors devices

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, H., E-mail: hudsonzanin@gmail.com [Associated Laboratory of Sensors and Materials of the National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos CEP 12227-010, SP (Brazil); Departamento de Semicondutores, Instrumentos e Fotônica, Faculdade de Engenharia Elétrica e Computação, Universidade Estadual de Campinas, UNICAMP, Campinas 13083-970 (Brazil); Saito, E., E-mail: esaito135@gmail.com [Associated Laboratory of Sensors and Materials of the National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos CEP 12227-010, SP (Brazil); Ceragioli, H.J., E-mail: helderjc@gmail.com [Departamento de Semicondutores, Instrumentos e Fotônica, Faculdade de Engenharia Elétrica e Computação, Universidade Estadual de Campinas, UNICAMP, Campinas 13083-970 (Brazil); Baranauskas, V., E-mail: vitor@dsif.fee.unicamp.br [Departamento de Semicondutores, Instrumentos e Fotônica, Faculdade de Engenharia Elétrica e Computação, Universidade Estadual de Campinas, UNICAMP, Campinas 13083-970 (Brazil); Corat, E.J., E-mail: corat@las.inpe.br [Associated Laboratory of Sensors and Materials of the National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos CEP 12227-010, SP (Brazil)

    2014-01-01

    Graphical abstract: - Highlights: • Graphene nanosheets were produced onto wire rods. • RGO and VACNT-O were evaluated and compared as supercapacitor electrode. • RGO and VACNT-O have structural and electrochemical properties quite similars. • The materials present good specific capacitance, energy storage and power delivery. - Abstract: Reduced graphene oxide (RGO) and vertically aligned carbon nanotubes (VACNT) superhydrophilic films were prepared by chemical vapor deposition techniques for electrical energy storage investigations. These electrodes were characterized in terms of their material and electrochemical properties by scanning electron microscopy (SEM), surface wettability, Fourier transform infrared spectroscopy (FTIR), energy dispersive and Raman spectroscopies, cyclic voltammetry (CV) and galvanostatic charge–discharge. We observed several physical structural and electrochemical similarities between these carbon-based materials with particular attention to very good specific capacitance, ultra-high energy storage and fast power delivery. Our results showed that the main difference between specific capacitance values is attributed to pseudocapacitive contribution and high density of multiwall nanotubes tips. In this work we have tested a supercapacitor device using the VACNT electrodes.

  18. Compositional effects in Ag_2ZnSnSe_4 thin films and photovoltaic devices

    International Nuclear Information System (INIS)

    Gershon, Talia; Sardashti, Kasra; Lee, Yun Seog; Gunawan, Oki; Singh, Saurabh; Bishop, Douglas; Kummel, Andrew C.; Haight, Richard

    2017-01-01

    Ag_2ZnSnSe_4 (AZTSe) is a relatively new n-type photovoltaic (PV) absorber material which has recently demonstrated a conversion efficiency of ∼5% in a Schottky device architecture. To date, little is known about how the influence of composition on AZTSe material properties and the resulting PV performance. In this study, the Ag/Sn ratio is shown to be critical in the controlling grain growth, non-radiative recombination, and the bulk defect structure of the absorber. Insufficient Ag (relative to Zn and Sn) results in small grains, low photoluminescence intensities, and band gap narrowing, possibly due to an increase in the bulk defect density. Additionally, etching the AZTSe films in KCN prior to junction formation is found to be important for achieving reproducible efficiencies. Surface analysis using Auger Nanoprobe Microscopy analysis reveals that a KCN etch can selectively remove potentially harmful Ag-rich secondary phases, therefore improving the MoO_3/AZTSe junction quality. Moreover, grain boundaries in AZTSe are found to be enriched in Sn and O following KCN; the role this oxide plays in surface passivation and junction formation has yet to be determined.

  19. Design and construction of a device for elaborate films of Vyns or Cellulose with control thickness

    International Nuclear Information System (INIS)

    Patlan C, F.

    1998-01-01

    This work is a part of the studies about the elaboration of reference radioactive sources, which are done in the National Institute of Nuclear Research in Mexico. Specially concerns with the elaboration of α-β radioactive sources. The importance of this work is because their applications increase day by day. Medicine, engineering, agriculture and even the arts cannot escape to the influence and impact of the nuclear sciences. But, what are the radioactive sources?, what is a holder of a radioactive source?, why we elaborate holders with special materials?, which is the best technique to elaborate them?. These topics are commented in this work. The material is as follows: the introduction and objective are described in chapter one. The second chapter deals with concepts about atomic and molecular structures, general description of nuclear radiation and their characteristics, comments about radioactive law decay, interaction of the alpha particles with the matter and a short description about surface barrier detectors. The different methods for elaborate a radioactive source holders are described in the chapter three. This same chapter speaks the topic about the elaboration of vyns or cellulose films and a device is proposed for make them; are some methods described how to take measure of their thickness. Chapter four shows the results, analysis and the respective conclusions. (Author)

  20. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  1. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  2. Effects of Long-Term Static Bending Deformation on a Barrier Thin Film for Flexible Organic Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Hung-I Lu

    2018-03-01

    Full Text Available The objective of this study is to investigate the effect of long-term static bending on the encapsulation properties of a commercial barrier thin film for flexible optoelectronic devices. Encapsulation properties of the barrier film are evaluated under long-term static bending at various radii of curvature. Experimental results reveal that no significantly detrimental effect on the water vapor transmission rate (WVTR at 40 °C and 90% RH is found for compressive bending up to 1000 h and for tensile bending up to 100 h with a radius of curvature of 5 mm or larger. However, WVTR of the barrier thin film is significantly increased and cracks are found in the barrier film when subjected to tensile bending of a radius of 10 mm or 5 mm for 1000 h. The expected WVTR of the given barrier thin film is numerically computed using a three-dimensional (3D finite element model. Numerical results indicate that, with the presence of cracks in the barrier thin film, the WVTR increases for an apparent increase in moisture entrances. The WVTR calculated by the 3D cracking model concurs with the experimental results.

  3. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    Science.gov (United States)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  4. Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device

    International Nuclear Information System (INIS)

    Umar, Z.A.; Rawat, R.S.; Tan, K.S.; Kumar, A.K.; Ahmad, R.; Hussain, T.; Kloc, C.; Chen, Z.; Shen, L.; Zhang, Z.

    2013-01-01

    Highlights: •The energetic ions and electron beams are used to synthesize TiC x /SiC/a-C:H films. •As-deposited crystalline and hard nanocomposite TiC x /SiC/a-C:H films are synthesized. •Very high average deposition rates of 68 nm/shot are achieved using dense plasma focus. •The maximum hardness of 22 GPa is achieved at the surface of the film. -- Abstract: Thin films of TiC x /SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiC x /SiC/a-C:H nanocomposite thin films using CH 4 :Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH 4 :Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiC x /SiC phases for thin film synthesized using different number of focus shots with CH 4 :Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH 4 :Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH 4 :Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiC x /SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiC x /SiC/a-C:H coatings

  5. Building-Integrated Solar Energy Devices based on Wavelength Selective Films

    Science.gov (United States)

    Ulavi, Tejas

    A potentially attractive option for building integrated solar is to employ hybrid solar collectors which serve dual purposes, combining solar thermal technology with either thin film photovoltaics or daylighting. In this study, two hybrid concepts, a hybrid photovoltaic/thermal (PV/T) collector and a hybrid 'solar window', are presented and analyzed to evaluate technical performance. In both concepts, a wavelength selective film is coupled with a compound parabolic concentrator (CPC) to reflect and concentrate the infrared portion of the solar spectrum onto a tubular absorber. The visible portion of the spectrum is transmitted through the concentrator to either a thin film Cadmium Telluride (CdTe) solar panel for electricity generation or into the interior space for daylighting. Special attention is given to the design of the hybrid devices for aesthetic building integration. An adaptive concentrator design based on asymmetrical truncation of CPCs is presented for the hybrid solar window concept. The energetic and spectral split between the solar thermal module and the PV or daylighting module are functions of the optical properties of the wavelength selective film and the concentrator geometry, and are determined using a Monte Carlo Ray-Tracing (MCRT) model. Results obtained from the MCRT can be used in conjugation with meteorological data for specific applications to study the impact of CPC design parameters including the half-acceptance angle thetac, absorber diameter D and truncation on the annual thermal and PV/daylighting efficiencies. The hybrid PV/T system is analyzed for a rooftop application in Phoenix, AZ. Compared to a system of the same area with independent solar thermal and PV modules, the hybrid PV/T provides 20% more energy, annually. However, the increase in total delivered energy is due solely to the addition of the thermal module and is achieved at an expense of a decrease in the annual electrical efficiency from 8.8% to 5.8% due to shading by

  6. Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

    NARCIS (Netherlands)

    Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

    2011-01-01

    Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for

  7. Transport physics and device modeling of zinc oxide thin film transistors - part II : contact resistance in short channel devices

    NARCIS (Netherlands)

    Torricelli, F.; Smits, E.C.P.; Meijboom, J.R.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Cantatore, E.

    2011-01-01

    Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the

  8. Three-dimensional ordered titanium dioxide-zirconium dioxide film-based microfluidic device for efficient on-chip phosphopeptide enrichment.

    Science.gov (United States)

    Zhao, De; He, Zhongyuan; Wang, Gang; Wang, Hongzhi; Zhang, Qinghong; Li, Yaogang

    2016-09-15

    Microfluidic technology plays a significant role in separating biomolecules, because of its miniaturization, integration, and automation. Introducing micro/nanostructured functional materials can improve the properties of microfluidic devices, and extend their application. Inverse opal has a three-dimensional ordered net-like structure. It possesses a large surface area and exhibits good mass transport, making it a good candidate for bio-separation. This study exploits inverse opal titanium dioxide-zirconium dioxide films for on-chip phosphopeptide enrichment. Titanium dioxide-zirconium dioxide inverse opal film-based microfluidic devices were constructed from templates of 270-, 340-, and 370-nm-diameter poly(methylmethacrylate) spheres. The phosphopeptide enrichments of these devices were determined by matrix-assisted laser desorption/ionization time-of-flight (MALDI-TOF) mass spectrometry. The device constructed from the 270-nm-diameter sphere template exhibited good comprehensive phosphopeptide enrichment, and was the best among these three devices. Because the size of opal template used in construction was the smallest, the inverse opal film therefore had the smallest pore sizes and the largest surface area. Enrichment by this device was also better than those of similar devices based on nanoparticle films and single component films. The titanium dioxide-zirconium dioxide inverse opal film-based device provides a promising approach for the efficient separation of various biomolecules. Copyright © 2016 Elsevier Inc. All rights reserved.

  9. High temperature superconducting devices for SQUIDs, HF- and FIR-applications. Subproject: Thin-film heterostructures for devices and loss mechanisms in HTS. Final report

    International Nuclear Information System (INIS)

    Froehlich, O.

    1994-06-01

    The successful use of electronic devices fabricated from the High Temperature Superconductors (HTS) in SQUID systems as well as HF- and FIR-applications requires the development of a suitable thin-film and device technology. Within the present research project we successfully established the technological base for the deposition and patterning of epitaxial HTS thin-films (YBaCuO, NdCeCuO) and heterostructures of HTS and insulating materials (e.g. NdGaO 3 ). YBaCuO/NdCeCuO superlattices could be successfully fabricated such that both components of the hterostructure were in a superconducting state. This allows for the fabrication and study of superconducting p-n structures. With respect to the fabrication of single grain boundary Josephson junctions based on the bicrystal technique we could establish an international leadership. The small spread of the junction parameters (∝20%) allowed the controllable fabrication of simple devices such as SQUIDs or flux-flow transistors. By the development of a new measuring technique the homogeneity of the critical current density distribution in grain-boundary junctions could be investigated on a sub-μm-scale. Within this project we also could establish a good understanding of the physical background of the transport phenomena in the mixed state of HTS in the presence of a temperature gradient. (orig./MM) [de

  10. Self-assembled graphene/azo polyelectrolyte multilayer film and its application in electrochemical energy storage device.

    Science.gov (United States)

    Wang, Dongrui; Wang, Xiaogong

    2011-03-01

    Graphene/azo polyelectrolyte multilayer films were fabricated through electrostatic layer-by-layer (LbL) self-assembly, and their performance as electrochemical capacitor electrode was investigated. Cationic azo polyelectrolyte (QP4VP-co-PCN) was synthesized through radical polymerization, postpolymerization azo coupling reaction, and quaternization. Negatively charged graphene nanosheets were prepared by a chemically modified method. The LbL films were obtained by alternately dipping a piece of the pretreated substrates in the QP4VP-co-PCN and nanosheet solutions. The processes were repeated until the films with required numbers of bilayers were obtained. The self-assembly and multilayer surface morphology were characterized by UV-vis spectroscopy, AFM, SEM, and TEM. The performance of the LbL films as electrochemical capacitor electrode was estimated using cyclic voltammetry. Results show that the graphene nanosheets are densely packed in the multilayers and form random graphene network. The azo polyelectrolyte cohesively interacts with the nanosheets in the multilayer structure, which prevents agglomeration of graphene nanosheets. The sheet resistance of the LbL films decreases with the increase of the layer numbers and reaches the stationary value of 1.0 × 10(6) Ω/square for the film with 15 bilayers. At a scanning rate of 50 mV/s, the LbL film with 9 bilayers shows a gravimetric specific capacitance of 49 F/g in 1.0 M Na(2)SO(4) solution. The LbL films developed in this work could be a promising type of the electrode materials for electric energy storage devices.

  11. Effect of substituents on electronic properties, thin film structure and device performance of dithienothiophene-phenylene cooligomers

    International Nuclear Information System (INIS)

    Zhang Shiming; Guo Yunlong; Xi Hongxia; Di Chongan; Yu Jian; Zheng Kai; Liu Ruigang; Zhan Xiaowei; Liu Yunqi

    2009-01-01

    Dithienothiophene-phenylene cooligomers with n-hexyloxy or n-dodecyloxy substituents have been synthesized and compared to the previously reported unsubstituted parent compound. The effect of substituents on the thermal, electronic, optical, thin film structure and field-effect transistor (OFET) properties was investigated. Structural phase transitions from highly-ordered nanocrystalline to liquid crystalline were observed at 241 and 213 deg. C for n-hexyloxy- and n-dodecyloxy-substituted compounds respectively, different from the parent compound. For the alkoxy-substituted compounds, the absorption spectra in thin film blue shift 50 nm, while the fluorescence spectra in thin film red shift 88-100 nm compared to those in solution. The OFET devices based on the alkoxy-substituted compounds exhibit mobilities as high as ca 0.02 cm 2 V -1 s -1 and their performance is sensitive to the alkoxy substituents and substrate temperatures

  12. Use of fluorescent-metal intensifying screens with RT-type films for X-ray radiography using pulse devices

    International Nuclear Information System (INIS)

    Morgovskij, L.Ya.; Khakim'yanov, R.R.

    1985-01-01

    A study was made on characteristics of combination of fluorescent-metal Kyokko SMP-308 (Japan) and RCF (Agfa-Gevert) screens with domestic X-ray RT-1, RT-2, RT-5 films. Pulse X-ray MIRA-3D and NORA devices at 200 kV voltage amplitude in X-ray tube were used as radiation source. Testing was conducted for steel samples of 5-40 mm thickness. Comparative exposures for various film combinations with fluorescent-metal screens, fluorescent VP-2 screens and lead foils of 27 μm thickness were determined at that. It is shown that fluorescent-metal screens can be successfully applied with domestic X-ray technical films. They enable to decrease exposure by one order with insignificant deterioration of sensitivity. It is important for testing of pipeline welds

  13. Suppression of hydrogenated carbon film deposition by scavenger techniques and their application to the tritium inventory control of fusion devices

    International Nuclear Information System (INIS)

    Tabares, F.L.; Tafalla, D.; Tanarro, I.; Herrero, V.J.; Islyaikin, A.; Maffiotte, C.

    2002-01-01

    The well-known radical and ion scavenger techniques of application in amorphous hydrogenated carbon film deposition studies are investigated in relation to the mechanism of tritium and deuterium co-deposition in carbon-dominated fusion devices. A particularly successful scheme results from the injection of nitrogen into methane/hydrogen plasmas for conditions close to those prevailing in the divertor region of present fusion devices. A complete suppression of the a-C : H film deposition has been achieved for N 2 /CH 4 ratios close to one in methane (5%)/hydrogen DC plasma. The implications of these findings in the tritium retention control in future fusion reactors are addressed. (author). Letter-to-the-editor

  14. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Likhachev, D.V., E-mail: dmitriy.likhachev@globalfoundries.com

    2015-08-31

    During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

  15. Efficient thin-film stack characterization using parametric sensitivity analysis for spectroscopic ellipsometry in semiconductor device fabrication

    International Nuclear Information System (INIS)

    Likhachev, D.V.

    2015-01-01

    During semiconductor device fabrication, control of the layer thicknesses is an important task for in-line metrology since the correct thickness values are essential for proper device performance. At the present time, ellipsometry is widely used for routine process monitoring and process improvement as well as characterization of various materials in the modern nanoelectronic manufacturing. The wide recognition of this technique is based on its non-invasive, non-intrusive and non-destructive nature, high measurement precision, accuracy and speed, and versatility to characterize practically all types of materials used in modern semiconductor industry (dielectrics, semiconductors, metals, polymers, etc.). However, it requires the use of one of the multi-parameter non-linear optimization methods due to its indirect nature. This fact creates a big challenge for analysis of multilayered structures since the number of simultaneously determined model parameters, for instance, thin film thicknesses and model variables related to film optical properties, should be restricted due to parameter cross-correlations. In this paper, we use parametric sensitivity analysis to evaluate the importance of various model parameters and to suggest their optimal search ranges. In this work, the method is applied practically for analysis of a few structures with up to five-layered film stack. It demonstrates an evidence-based improvement in accuracy of multilayered thin-film thickness measurements which suggests that the proposed approach can be useful for industrial applications. - Highlights: • An improved method for multilayered thin-film stack characterization is proposed. • The screening-type technique based on so-called “elementary effects” was employed. • The model parameters were ranked according to relative importance for model output. • The method is tested using two examples of complex thin-film stack characterization. • The approach can be useful in many practical

  16. Syntheses and characterization of thin films of Te94Se6 nanoparticles for semiconducting and optical devices

    International Nuclear Information System (INIS)

    Salah, Numan; Habib, Sami S.; Memic, Adnan; Alharbi, Najlaa D.; Babkair, Saeed S.; Khan, Zishan H.

    2013-01-01

    Thin films of Te 94 Se 6 nanoparticles were synthesized using the physical vapor condensation technique at different argon (Ar) pressures. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy, absorption spectrum, photoluminescence (PL) and Raman spectroscopy. XRD results show that the as-grown films have a polycrystalline structure. SEM images display uniform nanoparticles in these films where the size increases from ∼ 12 to about 60 nm by decreasing Ar pressure from 667 to 267 Pa. These as-grown thin films were found to have direct band gaps, whose value decreases with increasing particle size. The absorption and extinction coefficients for these films were also investigated. PL emission spectra exhibit three bands peaking at 666, 718 and 760 nm, while Raman spectra displayed three bands located at 123, 143 and 169 cm −1 . No significant changes are observed in positions or intensities of these bands by decreasing the Ar pressure, except that of the last band of PL; where the intensity increases. The obtained results on this Te 94 Se 6 nanomaterial especially its controlled direct bandgap might be useful for development of optical disks and other semiconducting devices. - Highlights: ► Thin films of Te 94 Se 6 nanoparticles were grown at different argon (Ar) pressures. ► Size of the nanoparticles increased by decreasing Ar pressure. ► They have direct band gap, whose value decreases by increasing the particle size. ► These nanomaterials might be useful for development of semiconducting devices

  17. Light trapping in thin film solar cells using photonic engineering device concepts

    Science.gov (United States)

    Mutitu, James Gichuhi

    In this era of uncertainty concerning future energy solutions, strong reservations have arisen over the continued use and pursuit of fossil fuels and other conventional sources of energy. Moreover, there is currently a strong and global push for the implementation of stringent measures, in order to reduce the amount of green house gases emitted by every nation. As a consequence, there has emerged a sudden and frantic rush for new renewable energy solutions. In this world of renewable energy technologies is where we find photovoltaic (PV) technology today. However, as is, there are still many issues that need to be addressed before solar energy technologies become economically viable and available to all people, in every part of the world. This renewed interest in the development of solar electricity, has led to the advancement of new avenues that address the issues of cost and efficiency associated with PV. To this end, one of the prominent approaches being explored is thin film solar cell (TFSC) technology, which offers prospects of lower material costs and enables larger units of manufacture than conventional wafer based technology. However, TFSC technologies suffer from one major problem; they have lower efficiencies than conventional wafer based solar cell technologies. This lesser efficiency is based on a number of reasons, one of which is that with less material, there is less volume for the absorption of incident photons. This shortcoming leads to the need for optical light trapping; which is concerned with admitting the maximum amount of light into the solar cell and keeping the light within the structure for as long as possible. In this thesis, I present the fundamental scientific ideas, practice and methodology behind the application of photonic engineering device concepts to increase the light trapping capacity of thin film solar cells. In the introductory chapters, I develop the basic ideas behind light trapping in a sequential manner, where the effects

  18. Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

    Science.gov (United States)

    George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

    2015-06-24

    The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

  19. Enhanced performance of organic light-emitting devices by using electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film as the anode modification layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaona [Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yan Jun [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Meng Lingchuan [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Sun Chenghua; Hu Xiujie; Chen Ping [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhou Shuyun, E-mail: zhou_shuyun@mail.ipc.ac.cn [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Teng Feng [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

    2012-01-31

    Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films were prepared by electropolymerization on patterned indium tin oxide substrates in isopropanol solution. The thickness and doping level of the PEDOT:PSS films were controlled by adjusting the electropolymerization time and the concentration of poly(styrene sulfonate) acid, respectively. Organic light-emitting diodes were fabricated using the electropolymerized PEDOT:PSS film as the anode modification layer. The dependence of the performance on thickness of PEDOT:PSS films was investigated. It is shown that the performance of the device can be further enhanced when the thickness of PEDOT:PSS films reached an optimum condition. This method facilitates manufacturing procedures of conducting polymers films and may offer an economical route for producing organic electroluminescent devices.

  20. Synthesis and characterization of platinum thin film as top electrodes for multifunctional layer devices by PLD

    International Nuclear Information System (INIS)

    Coy, L.E.; Ventura, J.; Ferrater, C.; Langenberg, E.; Polo, M.C.; Garcia-Cuenca, M.V.; Varela, M.

    2010-01-01

    Platinum thin films were grown onto (001) oriented SrTiO 3 substrates by means of the pulsed laser deposition technique. Structural and morphological characterizations were performed using XRD and AFM. The influence of substrate temperature and deposition rate was analyzed on the crystallographic properties of the film. As a result, an increment in the crystallinity of the film due to the change on the temperature was observed. On the other hand, Pt films showed a granular morphology and its roughness was related to the fluence and low deposition temperature. Finally their electrical properties were analyzed and discussed as a function of the previous morphological results.

  1. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    National Research Council Canada - National Science Library

    Chmelka, Bradley F

    2007-01-01

    ...) nanocomposite films have been measured and controlled to modify, enhance, and understand their optical and/or semiconducting properties over a hierarchy of dimensions, from molecular to macroscopic...

  2. Effects of bacteria on CdS thin films used in technological devices

    Science.gov (United States)

    Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

    2017-04-01

    Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

  3. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  4. Functionalized Nano-Film Microchannel Plate: A Single High Aspect Ratio Device for High Resolution, Low Noise Astronomical Imaging, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed innovation is to apply proven nano-film technology to enable Microchannel plate (MCP) devices to be manufactured on a range of insulating substrates and...

  5. N2 gas station and gas distribution system for TLD personnel monitoring gas based semi-automatic badge readers

    International Nuclear Information System (INIS)

    Chourasiya, G.; Pradhan, S.M.; Kher, R.K.; Bhatt, B.C

    2003-01-01

    Full text: New improvised hot gas based Auto TLD badge reader has several advantages over the earlier contact heating based manual badge reader. It requires constant supply of N 2 gas for its operation; The gas supplied using replaceable individual gas cylinders may have some safety hazards in their handling. It was therefore considered worthwhile to setup a N 2 gas assembly/ station outside the lab area and to bring regulated gas supply through network of tubes with proper regulation to the individual readers. The paper presents detailed description of the gas station and distribution system. The system is quite useful and offers several practical advantages for readout of TLD badges on the semiautomatic badge readers based on gas heating. Important advantage from dosimetric point of view is avoidance of gas flow rate fluctuations and corresponding variations in TL readouts

  6. Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

    International Nuclear Information System (INIS)

    Mehta, B.R.

    2009-01-01

    Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

  7. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  8. Optimization of PEDOT films in ionic liquid supercapacitors: demonstration as a power source for polymer electrochromic devices.

    Science.gov (United States)

    Österholm, Anna M; Shen, D Eric; Dyer, Aubrey L; Reynolds, John R

    2013-12-26

    We report on the optimization of the capacitive behavior of poly(3,4-ethylenedioxythiophene) (PEDOT) films as polymeric electrodes in flexible, Type I electrochemical supercapacitors (ESCs) utilizing ionic liquid (IL) and organic gel electrolytes. The device performance was assessed based on figures of merit that are critical to evaluating the practical utility of electroactive polymer ESCs. PEDOT/IL devices were found to be highly stable over hundreds of thousands of cycles and could be reversibly charged/discharged at scan rates between 500 mV/s and 2 V/s depending on the polymer loading. Furthermore, these devices exhibit leakage currents and self-discharge rates that are comparable to state of the art electrochemical double-layer ESCs. Using an IL as device electrolyte allowed an extension of the voltage window of Type I ESCs by 60%, resulting in a 2.5-fold increase in the energy density obtained. The efficacies of tjese PEDOT ESCs were assessed by using them as a power source for a high-contrast and fast-switching electrochromic device, demonstrating their applicability in small organic electronic-based devices.

  9. Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

    NARCIS (Netherlands)

    Nguyen, Duc Minh

    2010-01-01

    In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser

  10. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  11. Recognising Informal Elearning with Digital Badging: Evidence for a Sustainable Business Model

    Directory of Open Access Journals (Sweden)

    Patrina Law

    2015-11-01

    Full Text Available Digital badging as a trend in education is now recognised. It offers a way to reward and motivate, providing evidence of skills and achievements. Badged Open Courses (BOCs were piloted by The Open University (OU in 2013. The project built on research into the motivations and profiles of learners using free educational resources which the OU makes available through its OpenLearn platform (Law, Perryman & Law, 2013. This research found that an increasing proportion of learners are keen to have their informal learning achievements recognised (Law & Law, 2014. Based on these data, a suite of free BOCs, assessed through the deployment of Moodle quizzes, was launched. This paper reports on evaluation of the BOCs and what we now know of the strategic importance of informal learning recognition. The initiative aligns with University strategies to provide accessible routes into formal learning for those who might not otherwise have the opportunity.

  12. Main principles of passive devices based on graphene and carbon films in microwave-THz frequency range

    Science.gov (United States)

    Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadezhda I.; Batrakov, Konstantin G.; Kaplas, Tommi; Lamberti, Patrizia; Kotsilkova, Rumiana; Lambin, Philippe

    2017-07-01

    The ability of thin conductive films, including graphene, pyrolytic carbon (PyC), graphitic PyC (GrPyC), graphene with graphitic islands (GrI), glassy carbon (GC), and sandwich structures made of all these materials separated by polymer slabs to absorb electromagnetic radiation in microwave-THz frequency range, is discussed. The main physical principles making a basis for high absorption ability of these heterostructures are explained both in the language of electromagnetic theory and using representation of equivalent electrical circuits. The idea of using carbonaceous thin films as the main working elements of passive radiofrequency (RF) devices, such as shields, filters, polarizers, collimators, is proposed theoretically and proved experimentally. The important advantage of PyC, GrI, GrPyC, and GC is that, in contrast to graphene, they either can be easily deposited onto a dielectric substrate or are strong enough to allow their transfer from the catalytic substrate without a shuttle polymer layer. This opens a new avenue toward the development of a scalable protocol for cost-efficient production of ultralight electromagnetic shields that can be transferred to commercial applications. A robust design via finite-element method and design of experiment for RF devices based on carbon/graphene films and sandwiches is also discussed in the context of virtual prototyping.

  13. Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

    Energy Technology Data Exchange (ETDEWEB)

    Khan, I.A.; Hassan, M.; Hussain, T. [Department of Physics, GC University, 54000 Lahore (Pakistan); Ahmad, R., E-mail: ahriaz@gmail.com [Department of Physics, GC University, 54000 Lahore (Pakistan); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Rawat, R.S. [National Institute of Education, Nanyang Technological University, Singapore 637616 (Singapore)

    2009-04-01

    Zirconium aluminium oxynitride multiphase composite film is deposited on zirconium substrate using energetic nitrogen ions delivered from dense plasma Focus device. X-ray diffractometer (XRD) results show that five Focus shots are sufficient to initiate the nucleation of ZrN and Al{sub 2}O{sub 3} whereas 10 Focus shots are sufficient to initiate the nucleation of AlN. XRD results reveal that crystal growth of nitrides/oxides increases by increasing Focus shots (up to 30 Focus shots) and resputtering of the previously deposited film is taken place by further increase in Focus shots (40 Focus shots). Scanning electron microscopic (SEM) results indicate the uniform distribution of spherical grains ({approx}35 nm). A smoother surface is observed for 20 Focus shots at 0 deg. angular position. SEM results also show a net-type microstructure (thread like features) of the sample treated for 30 Focus shots whereas rough surface morphology is observed for 40 Focus shots. Energy dispersive spectroscopic profiles show the distribution of different elements present in the deposited composite films. A typical microhardness value of the deposited composite films is 5255 {+-} 10 MPa for 10 grams imposed load which is 3.3 times than the microhardness values of unexposed sample. The microhardness values of the exposed samples increases with increasing Focus shots (up to 30 Focus shots) and decreases for 40 Focus shots treatment due to resputtering of the previously deposited composite film. The microhardness values of the composite films decreases by increasing the sample's angular position.

  14. Treatment verification system in radiotherapy using a digital portal imaging device. Comparison with screen/film systems

    International Nuclear Information System (INIS)

    Nakata, Manabu; Komai, Yoshinori; Okada, Takashi; Fukumoto, Satoshi; Chadani, Kazuma; Nohara, Hiroki; Kazusa, Chudou.

    1994-01-01

    A digital portal imaging (DPI) system for megavoltage photon beams was installed recently in our department. The purpose of this study is to evaluate the image quality of this system. We have analyzed the following properties of the system; relationship between measured dose-rate and pixel values of the DPI, spatial resolution, detectability of low-contrast objects and setup errors. The results were compared with those of conventional screen-film systems. As a result, the relationship between the measured dose-rate and the pixel value of the DPI was found to be linear in the dose-rate range between 100 and 400 cGy/min. Spatial resolution was 1.25 and 0.5 mm for the DPI and the screen-film systems, respectively. The slope of the contrast-detail curves differed between the DPI and the screen-film systems, the contrast thresholds were 0.6 and 0.3% for the DPI and the screen-film systems, respectively. The detectability of a setup error of 1 mm and 2 mm for the DPI was lower than that by the screen-film systems, although the difference was not very significant. In conclusion, the image quality of the DPI at present time is slightly inferior to the conventional screen-film systems. However, notable advantages of the DPI system are that any positional changes in patients during irradiation can be detected very quickly, and that quantitative analysis of the setup variation can be obtained. The image quality of the DPI will be improved as the technology regarding advances. Therefore, this verification system using the DPI device, is expected to be used for clinical radiation therapy in the future. (author)

  15. Pupil's motivation in the 3. grades for required reading and The Reading Badge

    OpenAIRE

    Logar, Renata

    2013-01-01

    Reading is extremely important for pupils and their development. The pupil with reading habits riches his vocabulary and gaining knowledge. On the other hand the pupil through reading entry into the world of imagination and stories. Major role in motivating students to read have parents and teachers. In this graduation thesis I was interested in how third grade teachers motivate their pupils to read. In doing so, I was focused mainly to reading for required reading and The Reading Badge. ...

  16. Growth and Analysis of Highly Oriented (11n) BCSCO Films for Device Research

    Science.gov (United States)

    Raina, K. K.; Pandey, R. K.

    1995-01-01

    Films of BCSCO superconductor of the type Bi2CaSr2Cu2O(x), have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (greater than 860 C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values, zero resistance (T(sab co)) and critical current density obtained are 87 K and 10(exp 5) A/sq cm respectively.

  17. Novel micro-patterning processes for thin film NiTi vascular devices

    International Nuclear Information System (INIS)

    Chun, Y J; Mohanchandra, K P; Carman, G P; Levi, D S; Fishbein, M C

    2010-01-01

    In order to create microscale features in thin film NiTi for use in vascular endografts, a novel 'lift-off process' was developed for use with deep reactive ion etching. A wet etching approach is compared to two variations of this new 'lift-off' process. The first lift-off process (lift-off I) used Si posts to define the features of NiTi film deposited on the Si substrate. This method produced fractures in the NiTi when the film was released. The lift-off II process used Si islands as substrate for the film while the Si wafer defined the specific geometric features. Lift-off II process allowed for the creation of various shape patterns (i.e., ellipse, diamond, circle, square, etc) in the range of 5–180 µm. The lift-off II process produced smooth and well aligned micro-patterns in thin film NiTi without the undercutting found in wet etching techniques. The micro-patterned thin film NiTi formed from the lift-off II process was used to cover a stent. In vivo tests were performed to evaluate the endothelialization though patterned thin films. Angiography, histopathology and SEM showed patency of the artery and uniformly promoted endothelial layer covering without thrombosis in both a medium and small artery

  18. Growth and analysis of highly oriented (11n) BCSCO films for device research

    International Nuclear Information System (INIS)

    Raina, K.K.; Pandey, R.K.

    1994-01-01

    Films of BCSCO superconductor of the type Bi 2 CaSr 2 Cu 2 O x have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO 3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 degrees C) of Bi 2 CaSr 2 Cu 2 O 8 . Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860 degrees C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO 3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi 2 CaSr 2 Cu 2 O 8 phase films on (001) NdGaO 3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO 3 substrate orientation. The best values of zero resistance (T co ) and critical current density obtained are 87 K and 10 5 A/cm 2 , respectively

  19. Novel approach to growth of precipitate-free, high-quality oxide thin films suitable for device applications

    International Nuclear Information System (INIS)

    Endo, K.; Badica, P.; Sato, H.; Akoh, H.

    2006-01-01

    To eliminate precipitates-segregates that can easily occur on the thin film surfaces of the multicomponent materials for electronics, a new approach is proposed, consisting of the following aspects: first, on the substrates, artificial steps of predefined height and width are produced, and second, films are grown on such substrates. The width of the step is taken equal to the 'double of the migration length' of the atomic species depositing on the substrate. In these conditions, precipitates migrate and gather at the step edges where the free energy is lowest and the resulting totally precipitate-free surface of the film on the step is suitable for device applications or integration purposes. The method has several other important advantages and they are discussed in the text. Using this new approach we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown by MOCVD on (001) SrTiO 3 single crystal substrates with artificial steps of about 20 μm width

  20. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    International Nuclear Information System (INIS)

    Kim, E J; Kim, K A; Yoon, S M

    2016-01-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses. (paper)

  1. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  2. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  3. Fluorine-doped tin oxide surfaces modified by self-assembled alkanethiols for thin-film devices

    Energy Technology Data Exchange (ETDEWEB)

    Alves, A.C.T.; Gomes, D.J.C.; Silva, J.R.; Silva, G.B., E-mail: george@cpd.ufmt.br

    2013-08-15

    In this work, we have investigated self-assembled monolayers (SAMs) from alkanethiols on fluorine-doped tin oxide (FTO) surfaces, which were used as an anode for thin-film devices prepared from the conductive copolymer so-called sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET). The assembled monolayers were characterized by using wetting contact angle, atomic force microscopy, and electrical measurements. The results indicated that dodecanethiol molecules, CH{sub 3}(CH{sub 2}){sub 11}SH, were well assembled on the FTO surfaces. In addition, it was found similar values of wetting contact angle for dodecanethiol assembled on both FTO and Au surfaces. Concerning the thin-film device, current–voltage analysis revealed a hysteresis. This behavior was associated to a charge-trapping effect and also to structural changes of the SAMs. Finally, charge injection capability of tin oxide electrodes can be improved by using SAMs and then this approach can plays an important role in molecular-scale electronic devices.

  4. Effect of high-energy electron beam irradiation on the device characteristics of IGZO-based transparent thin film transistors

    International Nuclear Information System (INIS)

    Moon, Hye Ji; Oh, Hye Ran; Bae, Byung Seong; Yun, Eui Jung; Ryu, Min Ki; Cho, Kyoung Ik

    2012-01-01

    In this study, we investigated the effects of high-energy electron beam irradiation (HEEBI) on the device properties of indium-gallium-zinc-oxide (IGZO)-based transparent thin film transistors (TTFTs). The developed TTFTs had a top gate structure, which used IGZO and Al 2 O 3 films for the active layer and the gate dielectric, respectively. The developed TTFTs were treated with HEEBI in air at RT at an electron beam energy of 0.8 MeV and a dose of 1 x 10 14 electrons/cm 2 . Without the HEEBI treatment, the devices operated in depletion mode with a threshold voltage (V th ) of -11.25 V, a field-effect mobility (μ FE ) of 8.71 cm 2 /Vs, an on-off ratio (I on/off ) of 1.3 x 10 8 and a sub-threshold slope (SS) of 0.3 V/decade. A huge positive-shifted V th of -1 V, a very high μ FE of 420 cm 2 /Vs, a high I on/off of 6.1 x 10 8 , and a lower SS of 0.25 V/decade were achieved for the HEEBI-treated devices, suggesting that the device characteristics of the developed TTFTs were significantly improved by the HEEBI treatment. The best device characteristics, which include I on/off of 8.1 x 10 8 , SS of 0.25 V/decade, V th of +1 V, μ FE of 8.8 cm 2 /Vs, and operation in the enhancement mode without aging, were obtained for the samples that had been annealed after HEEBI treatment. On the basis of the experimental results, we believe that HEEBI treatment can be crucial to develop IGZO-based TFTs with high performance and long-term reliability.

  5. Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

    Science.gov (United States)

    Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

    2015-01-01

    Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

  6. Combining the Converse Humidity/Resistance Response Behaviors of RGO Films for Flexible Logic Devices

    KAUST Repository

    Tai, Yanlong; Bera, Tushar Kanti; Lubineau, Gilles; Yang, Zhen-Guo

    2017-01-01

    Carbon nanomaterials have excellent humidity sensing performance. Here, we demonstrate that reduced-graphene-oxide- (rGO) based conductive films with different thermal reduction times have gradient and invertible humidity/electrical resistance

  7. The research of device for measuring film thickness of intelligent coating machine

    Directory of Open Access Journals (Sweden)

    Wang Wanjun

    2015-01-01

    Full Text Available Ion beam sputtering machine uses computer to real time monitor the change of film thickness in the preparation process of soft X ray multilayer element fabrication. It solves the problems of uneven film thickness and too thick film thickness and so on, which exist in the original preparation process. The high-precision quartz crystal converts film thickness measurement into frequency measurement. The equal precision frequency meter based on FPGA measures the frequency. It can reduce the signal delay and interference signal of discrete components, accordingly improving the accuracy of measurement. Then it sents the count value to the host computer through the single chip microcomputer serial port. It calculates and displays the value by the GUI of LabVIEW. The experimental results show that, the relative measurement error can be decreased to 1/10, i.e., the measurement accuracy can be improved by more than ten times.

  8. Porous Polymeric Films from Microbubbles Generated Using a T-Junction Microfluidic Device.

    Science.gov (United States)

    Elsayed, M; Kothandaraman, A; Edirisinghe, M; Huang, J

    2016-12-20

    In this work, a simple microfluidic junction with a T geometry and coarse (200 μm diameter) capillaries was used to generate monodisperse microbubbles with an alginate polymer shell. Subsequently, these bubbles were used to prepare porous alginate films with good control over the pore structure. The lack of pore size, shape, and surface control in scalable forming of polymeric films is a major application-limiting drawback at present. Controlling the thinning process of the shell of the bubbles to tune the surface of the resulting structures was also explored. Films were prepared with nanopatterned surfaces by controlling the thinning of the bubble shell, with the aid of surfactants, to induce efficient bursting (fragmentation) of bubbles to generate nanodroplets, which become embedded within the film surface. This novel feature greatly expands and enhances the use of hydrophilic polymers in a wide range of biomedical applications, particularly in drug delivery and tissue engineering, such as studying cellular responses to different morphological surfaces.

  9. The preparation of Nb3Ge thin film superconductors in a UHV evaporation and sputter device

    International Nuclear Information System (INIS)

    Krevet, B.; Schauer, W.; Wuechner, F.

    1978-10-01

    Thin film techniques like evaporation or sputtering are remarkbly suitable to vary the metallurgical and physical properties of superconductors in a wide range. In the case of the A15-compound Nb 3 Ge only these preparation techniques allow us to produce a metastable pure phase in stoichiometric composition and to study its superconducting properties. The presen report describes two UHV-plants to produce superconducting films by multisource coevaporation and cosputtering. Of special importance are the constancy, monitoring and control of the evaporation rate, and the thermalization of the sputter components on the other hand. The experimental methods used are explained in detail and discussed together with the results of Nb 3 Ge films. With the preparation parameters suitably chosen both techniques allow to prepare reproducibly Nb 3 Ge films with 21 K transition temperature (onset); under optimized conditions Tc values up to 22.3 K have been reached. (orig.) [de

  10. Horizontally-connected ZnO-graphene hybrid films for multifunctional devices

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Yi Rang [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Song, Wooseok; Lee, Young Bum; Kim, Seong Ku; Han, Jin Kyu; Myung, Sung; Lee, Sun Sook; An, Ki-Seok [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); Choi, Chel-Jong [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lim, Jongsun, E-mail: jslim@krict.re.kr [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of)

    2016-08-30

    Highlights: • We designed horizontally-connected ZnO and graphene hybrid nanofilms with improved flexibility for multifunctional nanodevices including high performance TFTs. • The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. • The hybrid thin film transistors exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}. - Abstract: Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}.

  11. Synthesis of Nanocrystalline ZnS Thin Films via Spray Pyrolysis for Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    F. Rahman

    2013-02-01

    Full Text Available ZnS thin films were deposited on the glass substrates at a temperature of 350 °C by a low cost spray pyrolysis technique and annealed at 450 °C and 550 °C in a closed furnace. The as-deposited and annealed films were characterized by Energy Dispersive X-ray, X-ray Diffraction and UV-VIS spectrophotometer and dc conductivity by four probe van der Pauw method. The X-ray diffraction spectra of as-deposited films showed amorphous nature and after annealing at 450 °C and 550 °C the films were found polycrystalline nature with wurtzite hexagonal structure. The optical transmission spectra suggest that the fundamental absorption edge in the films is formed by the direct allowed transition. The optical band gap was decreased from 3.75 to 2.5 eV when the as-deposited films were annealed. The existing results of electrical conductivity and the activation energy reveal the semi-conducting behaviour of the samples.

  12. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Liu, P., E-mail: liup0013@ntu.edu.sg; Chen, T. P., E-mail: echentp@ntu.edu.sg; Li, X. D.; Wong, J. I. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Z. [School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Y. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Leong, K. C. [GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼10{sup 9} Ω for a device with the radius of 50 μm) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼10{sup 3} Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.

  13. Fabrication and Characterization of High-Sensitivity Underwater Acoustic Multimedia Communication Devices with Thick Composite PZT Films

    Directory of Open Access Journals (Sweden)

    Jeng-Cheng Liu

    2017-01-01

    Full Text Available This paper presents a high-sensitivity hydrophone fabricated with a Microelectromechanical Systems (MEMS process using epitaxial thin films grown on silicon wafers. The evaluated resonant frequency was calculated through finite-element analysis (FEA. The hydrophone was designed, fabricated, and characterized by different measurements performed in a water tank, by using a pulsed sound technique with a sensitivity of −190 dB ± 2 dB for frequencies in the range 50–500 Hz. These results indicate the high-performance miniaturized acoustic devices, which can impact a variety of technological applications.

  14. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  15. Composite films of oxidized multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as a contact electrode for transistor and inverter devices.

    Science.gov (United States)

    Yun, Dong-Jin; Rhee, Shi-Woo

    2012-02-01

    Composite films of multiwall carbon nanotube (MWNT)/poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were prepared by spin-coating a mixture solution. The effect of the MWNT loading and the MWNT oxidation, with acid solution or ultraviolet (UV)-ozone treatment, on the film properties such as surface roughness, work function, surface energy, optical transparency and conductivity were studied. Also pentacene thin film transistors and inverters were made with these composite films as a contact metal and the device characteristics were measured. The oxidation of MWNT reduced the conductivity of MWNT/PEDOT:PSS composite film but increased the work function and transparency. UV-ozone treated MWNT/PEDOT:PSS composite film showed higher conductivity (14000 Ω/□) and work function (4.9 eV) than acid-oxidized MWNT/PEDOT:PSS composite film and showed better performance as a source/drain electrode in organic thin film transistor (OTFT) than other types of MWNT/PEDOT:PSS composite films. Hole injection barrier of the UV-ozone treated MWNT/PEDOT:PSS composite film with pentacene was significantly lower than any other films because of the higher work function.

  16. Growth and analysis of highly oriented (11n) BCSCO films for device research

    Energy Technology Data Exchange (ETDEWEB)

    Raina, K.K.; Pandey, R.K. [Texas A& M Univ., College Station, TX (United States)

    1994-12-31

    Films of BCSCO superconductor of the type Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub x} have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO{sub 3} substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880{degrees}C) of Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8}. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860{degrees}C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO{sub 3} have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8} phase films on (001) NdGaO{sub 3} substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO{sub 3} substrate orientation. The best values of zero resistance (T{sub co}) and critical current density obtained are 87 K and 10{sup 5} A/cm{sup 2}, respectively.

  17. Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Prager, L., E-mail: lutz.prager@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Helmstedt, U. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Herrnberger, H. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Kahle, O. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany); Kita, F. [AZ Electronic Materials Germany GmbH, Rheingaustraße 190-196, 65203 Wiesbaden (Germany); Münch, M. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Pender, A.; Prager, A.; Gerlach, J.W. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Stasiak, M. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany)

    2014-11-03

    Based on results of preceding research and development, thin gas barriers were made by wet application of perhydropolysilazane solution onto polymer films and its subsequent photo-initiated conversion to dense silica layers applying vacuum ultraviolet irradiation. Compared to the state of the art, these layers were sufficiently improved and characterized by spectroscopic methods, by scanning electron microscopy and by gas permeation measurements. Water vapor transmission rates (WVTR) below 10{sup −2} g m{sup −2} d{sup −1} were achieved. In this way, single barrier films were developed and produced on a pilot plant from roll to roll, 250 mm wide, at speeds up to 10 m min{sup −1}. Two films were laminated using adhesives curable with ultraviolet (UV) light and evaluated by peel tests, gas permeation measurement and climate testing. It could be shown that the described high-barrier laminates which exhibit WVTR ≈ 5 × 10{sup −4} g m{sup −2} d{sup −1}, determined by the calcium mirror method, are suitable for encapsulation of flexible thin-film photovoltaic modules. Durability of the encapsulated modules could be verified in several climate tests including damp-heat, thermo-cycle (heating, freezing, wetting) and UV exposures which are equivalent to more than 20 years of endurance at outdoor conditions in temperate climate. In the frame of further research and technical development it seems to be possible to design a cost efficient industrial scale process for the production of encapsulation films for photovoltaic applications. - Highlights: • Dense silica barrier layers were developed by a photochemical approach. • Polymer based barrier films were laminated yielding flexible high-barrier films. • Using these laminates photovoltaic test modules were encapsulated and tested. • A durability of more than 20 years at outdoor conditions could be proved.

  18. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang

    2017-06-27

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  19. Loop-Mediated Isothermal Amplification Using a Lab-on-a-Disc Device with Thin-film Phase Change Material.

    Science.gov (United States)

    Ko, Junguk; Yoo, Jae-Chern

    2018-03-05

    The design and fabrication of temperature measurement systems that facilitate successful realization of DNA amplification using a lab-on-a-disc (LOD) device are a highly challenging task. The major challenge lies in the fact that such a system must be directly attached to a heating chamber in a way that enables the accurate measurement of temperature of the chamber while allowing the LOD to rotate. This paper presents a temperature control system for implementing isothermal amplification of DNA samples using an LOD device. The proposed system utilizes a thin-film phase change material and non-contact heating system to remotely measure the actual temperature of the chamber and, if required, rapidly heat it to the desired temperature. The results of the experiments performed in this study demonstrate that the proposed system provides an automated platform for molecular amplification and exhibits an operational performance comparable to that of traditional microcentrifuge tube-based isothermal amplification systems.

  20. Bidirectional current triggering in planar devices based on serially connected VO2 thin films using 965 nm laser diode.

    Science.gov (United States)

    Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

    2016-08-08

    By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO2) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO2. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

  1. Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

    Directory of Open Access Journals (Sweden)

    Takayoshi Katase

    2017-05-01

    Full Text Available Infrared (IR transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2 as the active layer in a three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window.

  2. Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

    2012-12-01

    We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

  3. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang; Tsai, Dung-Sheng; Lu, Chao; Kim, Soo Youn; Mungan, Selin; Yang, Shih-Guo; Zhang, Yuanzhi; He, Jr-Hau

    2017-01-01

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  4. Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

    International Nuclear Information System (INIS)

    Pu, Haifeng; Zhou, Qianfei; Yue, Lan; Zhang, Qun

    2013-01-01

    We reported the impact of oxygen plasma treatment on solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Plasma-treated devices showed higher mobility, larger on/off current ratio, but a monotonically increased SS with plasma treatment time as well. The phenomenon was mainly due to two components in oxygen plasma, atomic oxygen and O 2 + , according to the photoluminescence (PL) measurement. Atomic oxygen reacted with oxygen vacancies in channel layer resulting in an improved mobility, and O 2 + tends to aggregated at the surface acting as trapping states simultaneously. Our study suggests that moderate oxygen plasma treatment can be adopted to improve the device performance, while O 2 + should be eliminated to obtain good interfacial states.

  5. Multiple-target method for sputtering amorphous films for bubble-domain devices

    International Nuclear Information System (INIS)

    Burilla, C.T.; Bekebrede, W.R.; Smith, A.B.

    1976-01-01

    Previously, sputtered amorphous metal alloys for bubble applications have ordinarily been prepared by standard sputtering techniques using a single target electrode. The deposition of these alloys is reported using a multiple target rf technique in which a separate target is used for each element contained in the alloy. One of the main advantages of this multiple-target approach is that the film composition can be easily changed by simply varying the voltages applied to the elemental targets. In the apparatus, the centers of the targets are positioned on a 15 cm-radius circle. The platform holding the film substrate is on a 15 cm-long arm which can rotate about the center, thus bringing the sample successively under each target. The platform rotation rate is adjustable from 0 to 190 rpm. That this latter speed is sufficient to homogenize the alloys produced is demonstrated by measurements made of the uniaxial anisotropy constant in Gd 0 . 12 Co 0 . 59 Cu 0 . 29 films. The anisotropy is 6.0 x 10 5 ergs/cm 3 and independent of rotation rate above approximately 25 rpm, but it drops rapidly for slower rotation rates, reaching 1.8 x 10 5 ergs/cm 3 for 7 rpm. The film quality is equal to that of films made by conventional methods. Coercivities of a few oersteds in samples with stripe widths of 1 to 2 μm and magnetizations of 800 to 2800 G were observed

  6. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

    International Nuclear Information System (INIS)

    Stoldt, Conrad R; Bright, Victor M

    2006-01-01

    A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

  7. Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

    Science.gov (United States)

    Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

    2018-01-01

    This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

  8. Characterization of Safranine O based thin-film sandwich devices by analysing their electrical and photoelectrical behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, G.D. [Jodhpur Univ. (India). Dept. of Physics; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur, Rajastan (India); Gupta, S.K. [Jodhpur Univ. (India). Dept. of Physics

    1997-04-30

    Safranine O (SAF), chemically known as 3,7-diamino-2,8-dimethyl-5-phenyl-phenazinium chloride, was employed in the form of thin film for the fabrication of In/SAF/ITO and Al/SAF/ITO (ITO is indium-tin oxide) sandwich devices. In these devices, at low voltages, the dark current in forward bias condition corresponds to a positive voltage at ITO, which varies exponentially with applied voltage. The square law dependence at higher voltage region indicates that conduction is limited by a discrete trapping level above the conduction band edge. The analysis of the 1/C{sup 2} versus V plots, for low frequencies, reveals that the SAF behaves as a semiconductor. At higher frequencies, the devices exhibit voltage-independent capacitances, which is explained in terms of the extremely slow kinetics of space charges. The photogeneration process in these devices is explained in terms of the exciton dissociation into free carriers at the Schottky barrier (Al/SAF and In/SAF interfaces). Various electrical and photovoltaic parameters are calculated and discussed in detail. (orig.)

  9. Nanoscale film formation of ferritin and its application to biomemory device

    International Nuclear Information System (INIS)

    Kim, Sang-Uk; Lee, Taek; Lee, Jin-Ho; Yagati, Ajay Kumar; Min, Junhong; Choi, Jeong-Woo

    2009-01-01

    A redox protein, ferritin is used as a functional constituent of the developed biomemory device. The concept of molecular device mainly depends on the solidification of biomolecules of interest and on the realization of properties of molecule immobilized on a selected substrate. Here, we immobilized the biomolecule, ferritin protein on gold substrate using an organic linker 11-mercaptoundecanoic acid (11-MUA). The immobilization of the protein on the gold substrate was confirmed by surface plasmon spectroscopy, Raman spectroscopy, and atomic force microscopy (AFM). The basic two memory functions, reading and writing of the developed biomemory device, were investigated by open-circuit potential amperometry (OCPA) using the redox property of the biomolecule of interest. The surface topography investigation by scanning tunneling microscopy (STM) shows that the robustness of the ferritin-based biomemory device was validated by the repeated electrochemical performance. These results show the developed biomemory device as a step towards the protein-based nanobiochip.

  10. Characteristics of Electro-Optic Device Using Conducting Polymers, Polythiophene and Polypyrrole Films

    Science.gov (United States)

    Kaneto, Keiichi; Yoshino, Katsumi; Inuishi, Yoshio

    1983-07-01

    Detailed characteristics of electro-optic elements (color switching and memory) utilizing the spectral change of conducting polymers by electrochemical doping and undoping are studied. The response time of color switching, for example, red≤ftrightarrowblue in polythiophene film in the electrolyte of LiBF4/acetonitrile is 30˜100 msec under the applied voltages of -2.0{≤ftrightarrow}+4.0 V vs. Li plate. More than 103 cycles of color switch are observed quite reproducibly. Three color states of yellow green, dark brown and blue are demonstrated for polypyrrole film.

  11. Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

    1999-09-30

    ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

  12. Electro-optical evaluation of tungsten oxide and vanadium pentoxide thin films for modeling an electrochromic device

    Directory of Open Access Journals (Sweden)

    H Najafi Ashtiani

    2015-01-01

    Full Text Available In this study, tungsten oxide and vanadium oxide electrochromic thin films were placed in vacuum and in a thickness of 200 nm on a transparent conductive substrate of SnO2:F using the physical method of thermal evaporation. Then they were studied for the optical characteristics in the wavelength range from 400 to 700 nm and for their electrical potentials in the range form +1.5 to -1.5 volts. The films were post heated in order to assess changes in energy gap with temperature, at temperatures120 , 300 and 500°C. Refractive and extinction coefficients and the transition type of films in the visible light range and in the thickness of 200 nm were determined and measured. X-ray diffraction pattern and SEM images and cyclic Voltammetry of layers were also studied. The results of this study due to the deposition of layers, the layer thickness selected, the type of substrate, the range of annealing temperatures and selected electrolyte were in full compliance with the works of other researchers [1,2,3]. Therefore, these layers with features such as crystal structure, refractive and even extinction coefficients in the range of visible light, the appropriate response of chromic switch in the replication potential, good adhesion to the substrate, and the high amount of optical transmition and so on, prove useful to be used in an electrochromic device

  13. Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters

    International Nuclear Information System (INIS)

    Hirano, Hideki; Tanaka, Shuji; Kimura, Tetsuya; Koutsaroff, Ivoyl P; Kadota, Michio; Hashimoto, Ken-ya; Esashi, Masayoshi

    2013-01-01

    This paper presents a film transfer process to integrate barium strontium titanate (BST) metal–insulator–metal (MIM) structures with surface acoustic wave (SAW) devices on a lithium niobate (LN) substrate. A high-quality BST film grown on a Si substrate above 650 °C was patterned into the MIM structures, and transferred to a LN substrate below 130 °C by Ar-plasma-activated Au–Au bonding and the Si lost wafer process. Simple test SAW devices with the transferred BST variable capacitors (VCs) were fabricated and characterized. The resonance frequency of a one-port SAW resonator with the VC connected in series changed from 999 to 1018 MHz, when a dc bias voltage of 3 V was applied to the VC. Although the observed frequency tuning range was smaller than expected due to the degradation of BST in the process, the experimental result demonstrated that a tunable SAW filter with the transferred BST VCs was feasible. (paper)

  14. Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

    International Nuclear Information System (INIS)

    Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

    2005-01-01

    Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

  15. Contribution of the cashew gum (Anacardium occidentale L.) for development of layer-by-layer films with potential application in nanobiomedical devices

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, I.M.S. [Departamento de Quimica, Centro de Ciencias da Natureza, CCN, Universidade Federal do Piaui, UFPI, Teresina, PI, 64049-550 (Brazil); Nucleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Parnaiba, CMRV, Universidade Federal do Piaui, UFPI, Parnaiba, PI, 64202-020 (Brazil); Zampa, M.F. [Nucleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Parnaiba, CMRV, Universidade Federal do Piaui, UFPI, Parnaiba, PI, 64202-020 (Brazil); Campus Parnaiba, Instituto Federal de Educacao Ciencia e Tecnologia do Piaui, IFPI, Parnaiba, PI, 64210-260 (Brazil); Moura, J.B.; Santos, J.R. dos [Departamento de Quimica, Centro de Ciencias da Natureza, CCN, Universidade Federal do Piaui, UFPI, Teresina, PI, 64049-550 (Brazil); Eaton, P. [REQUIMTE, Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre, Porto, 4169-007 (Portugal); Zucolotto, V. [Grupo de Biofisica Molecular Sergio Mascarenhas, Instituto de Fisica de Sao Carlos, IFSC, USP, Sao Carlos, SP, 13566-590 (Brazil); and others

    2012-08-01

    The search for bioactive molecules to be employed as recognition elements in biosensors has stimulated researchers to pore over the rich Brazilian biodiversity. In this sense, we introduce the use of natural cashew gum (Anacardium occidentale L.) as an active biomaterial to be used in the form of layer-by-layer films, in conjunction with phthalocyanines, which were tested as electrochemical sensors for dopamine detection. We investigated the effects of chemical composition of cashew gum from two different regions of Brazil (Piaui and Ceara states) on the physico-chemical characteristics of these nanostructures. The morphology of the nanostructures containing cashew gum was studied by atomic force microscopy which indicates that smooth films punctuated by globular features were formed that showed low roughness values. The results indicate that, independent of the origin, cashew gum stands out as an excellent film forming material with potential application in nanobiomedical devices as electrochemical sensors. Highlights: Black-Right-Pointing-Pointer This study focused on the use of cashew gum for the formation of LbL films. Black-Right-Pointing-Pointer LbL films containing cashew gums were investigated by AFM and cyclic voltammetry. Black-Right-Pointing-Pointer Cashew gum contributed to obtain stable films with well-defined redox processes. Black-Right-Pointing-Pointer Cashew gum films detected dopamine in low concentrations. Black-Right-Pointing-Pointer These LbL films presented potential application in nanobiomedical devices.

  16. Contribution of the cashew gum (Anacardium occidentale L.) for development of layer-by-layer films with potential application in nanobiomedical devices

    International Nuclear Information System (INIS)

    Araújo, I.M.S.; Zampa, M.F.; Moura, J.B.; Santos, J.R. dos; Eaton, P.; Zucolotto, V.

    2012-01-01

    The search for bioactive molecules to be employed as recognition elements in biosensors has stimulated researchers to pore over the rich Brazilian biodiversity. In this sense, we introduce the use of natural cashew gum (Anacardium occidentale L.) as an active biomaterial to be used in the form of layer-by-layer films, in conjunction with phthalocyanines, which were tested as electrochemical sensors for dopamine detection. We investigated the effects of chemical composition of cashew gum from two different regions of Brazil (Piauí and Ceará states) on the physico-chemical characteristics of these nanostructures. The morphology of the nanostructures containing cashew gum was studied by atomic force microscopy which indicates that smooth films punctuated by globular features were formed that showed low roughness values. The results indicate that, independent of the origin, cashew gum stands out as an excellent film forming material with potential application in nanobiomedical devices as electrochemical sensors. Highlights: ► This study focused on the use of cashew gum for the formation of LbL films. ► LbL films containing cashew gums were investigated by AFM and cyclic voltammetry. ► Cashew gum contributed to obtain stable films with well-defined redox processes. ► Cashew gum films detected dopamine in low concentrations. ► These LbL films presented potential application in nanobiomedical devices.

  17. Design, fabrication, and characterization of electroless Ni–P alloy films for micro heating devices

    International Nuclear Information System (INIS)

    Liu, Bernard Haochih; Liao, Fang-Yi; Chen, Jian-Hong

    2013-01-01

    In this work electroless nickel–phosphorous coatings were used as the micro heaters for scanning thermal microscopy. The deposition of Ni–P alloys not only simplified the microelectromechanical system fabrication steps but also provided flexibility in the tuning of the resistance of the heating elements. Ni–P films were plated on patterned silicon substrates and silicon with a silicon nitride film. The pre-deposition reactive ion etch (RIE) treatment caused a change in surface roughness that enhanced the adhesion of Ni–P coatings. Optimization of RIE parameters and pH values could achieve selective deposition of Ni–P, thus helped the lift-off of a serpentine circuit pattern. The chemical composition and microstructure of Ni–P films affect the electrical properties of micro heaters. Energy-dispersive X-ray spectroscopy identified the Ni–P composition and confirmed its insignificant level of oxidation. The high-temperature X-ray diffraction indicated that the as-deposited film was crystalline Ni, which later transformed into Ni 3 P at higher temperature. The resistivity of Ni–P films was tailored between 10 −5 and 10 −7 Ω m via a post-deposition annealing, which also obtained a stable temperature coefficient of resistance. Consequently, the performance of micro heaters could be designed with a high degree of flexibility. - Highlights: • We developed a process to fabricate micro heater by Ni–P electroless plating. • Reactive ion etch caused oscillating surface roughness and affected Ni–P adhesion. • Ni 3 P phase precipitates during annealing and reduces resistivity of Ni–P alloys. • Resistivity of Ni–P is tunable from 10 −5 to 10 −7 Ω m by plating and annealing

  18. Design, fabrication, and characterization of electroless Ni–P alloy films for micro heating devices

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Bernard Haochih, E-mail: hcliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Taiwan (China); Promotion Center for Global Materials Research, National Cheng Kung University, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Taiwan (China); Liao, Fang-Yi; Chen, Jian-Hong [Department of Materials Science and Engineering, National Cheng Kung University, Taiwan (China)

    2013-06-30

    In this work electroless nickel–phosphorous coatings were used as the micro heaters for scanning thermal microscopy. The deposition of Ni–P alloys not only simplified the microelectromechanical system fabrication steps but also provided flexibility in the tuning of the resistance of the heating elements. Ni–P films were plated on patterned silicon substrates and silicon with a silicon nitride film. The pre-deposition reactive ion etch (RIE) treatment caused a change in surface roughness that enhanced the adhesion of Ni–P coatings. Optimization of RIE parameters and pH values could achieve selective deposition of Ni–P, thus helped the lift-off of a serpentine circuit pattern. The chemical composition and microstructure of Ni–P films affect the electrical properties of micro heaters. Energy-dispersive X-ray spectroscopy identified the Ni–P composition and confirmed its insignificant level of oxidation. The high-temperature X-ray diffraction indicated that the as-deposited film was crystalline Ni, which later transformed into Ni{sub 3}P at higher temperature. The resistivity of Ni–P films was tailored between 10{sup −5} and 10{sup −7} Ω m via a post-deposition annealing, which also obtained a stable temperature coefficient of resistance. Consequently, the performance of micro heaters could be designed with a high degree of flexibility. - Highlights: • We developed a process to fabricate micro heater by Ni–P electroless plating. • Reactive ion etch caused oscillating surface roughness and affected Ni–P adhesion. • Ni{sub 3}P phase precipitates during annealing and reduces resistivity of Ni–P alloys. • Resistivity of Ni–P is tunable from 10{sup −5} to 10{sup −7} Ω m by plating and annealing.

  19. The interpretability of doctor identification badges in UK hospitals: a survey of nurses and patients.

    Science.gov (United States)

    Hickerton, Bethan C; Fitzgerald, Daniel John; Perry, Elizabeth; De Bolla, Alan R

    2014-07-01

    Hospital badges have multiple important purposes, but their essential role remains the clear identification of the bearer, including their professional status. The modernisation of medical careers in the National Health Service has changed terminology dramatically, resulting in a plethora of new job titles emerging among both doctors and nurses. To determine whether the new or old terminology allowed clearer identification of medical doctors by patients and nurses. We replicated 11 identification badges used in the Royal Cornwall Hospital and Wrexham Maelor Hospital, both current and before the introduction of new medical training terminology. Data were collected from 114 patients and 67 nurses, by asking them to (1) identify which name badges represented doctors and (2) rank them in order of seniority. Only 11% of patients and 60% of nurses identified a 'Foundation Year 1 Trainee' as a qualified medical doctor. Indeed, only 'General Practice Vocational Trainee' and 'Consultant' were both readily identifiable as qualified doctors to both patients and nurses. Ranking was also a problem, with only 19% of patients and 45% of nurses able to correctly grade medical doctors using the current terminology. The old terminology allowed more accurate identification by nurses, with over 80% successfully ranking and marking the title appropriately. Current terminology is a source of confusion to both patients and members of the immediate medical care team, with nurses unable to correctly identify medical doctors. Our study indicates that a review of terminology is necessary to ensure patients, and staff, are able to communicate effectively. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

  20. Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

    Science.gov (United States)

    Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

    2018-06-01

    We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

  1. Quality assurance of the manual OSLD Badge based personnel monitoring system

    International Nuclear Information System (INIS)

    Kumar, Munish; Gaonkar, U.P.; Koul, D.K.; Datta, D.; Singh, S.K.; Rakesh, R.B.; Kulkarni, M.S.; Ratna, P.

    2018-01-01

    Optically stimulated luminescence (OSL) based technique is widely used for monitoring of radiation workers exposed to x, gamma and beta radiations. Features such as multiple readout, short processing time, better beta response, absence of infra red signal (no heating), flexibility in the dosimeter design using binders or substrates having low melting point are associated advantages. Presently α-Al 2 O 3 :C and BeO based dosimeters are popularly used for personnel monitoring applications worldwide. The present paper describe results of the external quality control check (QAC) tests performed for the present OSLD badge based personnel monitoring system. The results were analyzed as per ANSI criteria and Trumpet curve methods

  2. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  3. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Science.gov (United States)

    Jarad, Amer N.; Ibrahim, Kamarulazizi; Ahmed, Nasser M.

    2016-07-01

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10-5 (Ω.cm)-1, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  4. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Energy Technology Data Exchange (ETDEWEB)

    Jarad, Amer N., E-mail: amer78malay@yahoo.com.my; Ibrahim, Kamarulazizi, E-mail: kamarul@usm.my; Ahmed, Nasser M., E-mail: nas-tiji@yahoo.com [Nano-optoelectronic Research and Technology Laboratory School of physics, University of Sains Malaysia, 11800 Pulau Pinang (Malaysia)

    2016-07-06

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10{sup −5} (Ω.cm){sup −1}, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  5. Tailoring uniform gold nanoparticle arrays and nanoporous films for next-generation optoelectronic devices

    Science.gov (United States)

    Farid, Sidra; Kuljic, Rade; Poduri, Shripriya; Dutta, Mitra; Darling, Seth B.

    2018-06-01

    High-density arrays of gold nanodots and nanoholes on indium tin oxide (ITO)-coated glass surfaces are fabricated using a nanoporous template fabricated by the self-assembly of diblock copolymers of poly (styrene-block-methyl methacrylate) (PS-b-PMMA) structures. By balancing the interfacial interactions between the polymer blocks and the substrate using random copolymer, cylindrical block copolymer microdomains oriented perpendicular to the plane of the substrate have been obtained. Nanoporous PS films are created by selectively etching PMMA cylinders, a straightforward route to form highly ordered nanoscale porous films. Deposition of gold on the template followed by lift off and sonication leaves a highly dense array of gold nanodots. These materials can serve as templates for the vapor-liquid-solid (VLS) growth of semiconductor nanorod arrays for next generation hybrid optoelectronic applications.

  6. Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yu-Jen; Tsai, Min-Chuan; Wang, Chiung-Hsin; Hsieh, Tsung-Eong, E-mail: tehsieh@mail.nctu.edu.tw

    2012-02-29

    Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 Degree-Sign C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. - Highlights: Black-Right-Pointing-Pointer Ce doping increased phase-change temperature of GST from 159 to 236 Degree-Sign C. Black-Right-Pointing-Pointer No suppression of resistivity level in amorphous Ce-doped GST. Black-Right-Pointing-Pointer Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 10{sup 5}. Black-Right-Pointing-Pointer p-type semiconducting behavior of GST was enhanced by Ce-doping. Black-Right-Pointing-Pointer Ce-doping improved the thermal stability of threshold voltage of GST PCM device.

  7. Film dosimetry using a smart device camera: a feasibility study for point dose measurements.

    Science.gov (United States)

    Aland, Trent; Jhala, Ekta; Kairn, Tanya; Trapp, Jamie

    2017-10-03

    In this work, a methodology for using a smartphone camera, in conjunction with a light-tight box operating in reflective transmission mode, is investigated as a proof of concept for use as a film dosimetry system. An imaging system was designed to allow the camera of a smartphone to be used as a pseudo densitometer. Ten pieces of Gafchromic EBT3 film were irradiated to doses up to 16.89 Gy and used to evaluate the effects of reproducibility and orientation, as well as the ability to create an accurate dose response curve for the smartphone based dosimetry system, using all three colour channels. Results were compared to a flatbed scanner system. Overall uncertainty was found to be best for the red channel with an uncertainty of 2.4% identified for film irradiated to 2.5 Gy and digitised using the smartphone system. This proof of concept exercise showed that although uncertainties still exceed a flatbed scanner system, the smartphone system may be useful for providing point dose measurements in situations where conventional flatbed scanners (or other dosimetry systems) are unavailable or unaffordable.

  8. Film dosimetry using a smart device camera: a feasibility study for point dose measurements

    Science.gov (United States)

    Aland, Trent; Jhala, Ekta; Kairn, Tanya; Trapp, Jamie

    2017-10-01

    In this work, a methodology for using a smartphone camera, in conjunction with a light-tight box operating in reflective transmission mode, is investigated as a proof of concept for use as a film dosimetry system. An imaging system was designed to allow the camera of a smartphone to be used as a pseudo densitometer. Ten pieces of Gafchromic EBT3 film were irradiated to doses up to 16.89 Gy and used to evaluate the effects of reproducibility and orientation, as well as the ability to create an accurate dose response curve for the smartphone based dosimetry system, using all three colour channels. Results were compared to a flatbed scanner system. Overall uncertainty was found to be best for the red channel with an uncertainty of 2.4% identified for film irradiated to 2.5 Gy and digitised using the smartphone system. This proof of concept exercise showed that although uncertainties still exceed a flatbed scanner system, the smartphone system may be useful for providing point dose measurements in situations where conventional flatbed scanners (or other dosimetry systems) are unavailable or unaffordable.

  9. Relation between film character and wafer alignment: critical alignment issues on HV device for VLSI manufacturing

    Science.gov (United States)

    Lo, Yi-Chuan; Lee, Chih-Hsiung; Lin, Hsun-Peng; Peng, Chiou-Shian

    1998-06-01

    Several continuous splits for wafer alignment target topography conditions to improve epitaxy film alignment were applied. The alignment evaluation among former layer pad oxide thickness (250 angstrom - 500 angstrom), drive oxide thickness (6000 angstrom - 10000 angstrom), nitride film thickness (600 angstrom - 1500 angstrom), initial oxide etch (fully wet etch, fully dry etch and dry plus wet etch) will be split to this experiment. Also various epitaxy deposition recipe such as: epitaxy source (SiHCl2 or SiCHCl3) and growth rate (1.3 micrometer/min approximately 2.0 micrometer/min) will be used to optimize the process window for alignment issue. All the reflectance signal and cross section photography of alignment target during NIKON stepper alignment process will be examined. Experimental results show epitaxy recipe plays an important role to wafer alignment. Low growth rate with good performance conformity epitaxy lead to alignment target avoid washout, pattern shift and distortion. All the results (signal monitor and film character) combined with NIKON's stepper standard laser scanning alignment system will be discussed in this paper.

  10. Feasibility Study on Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation

    International Nuclear Information System (INIS)

    Jung, Inha

    2013-12-01

    This report on the 'Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation' is belonged to the final report on the preliminary study of the first subject in 2013 for civilian project. This was complimented on the responsible of the Korea Atomic Energy Research Institute for 1 st of June 2013 to 30 th of November 2013. We are going to make sterilization the badge using the gamma ray and supplying the oxygen by nano-bubble oxygen rich water for cultivating the Matsutake Mushroom, instead of the conventional process of sterilization of the badge by hot steam over 120 .deg. C consuming over 8 hours and expensive ventilation system for supplying the fresh air for delivering the oxygen

  11. Feasibility Study on Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Inha

    2013-12-15

    This report on the 'Sterilization of Badge using Radiation and Cultivation by Nano-bubble Water for Matsutake Mushroom Cultivation' is belonged to the final report on the preliminary study of the first subject in 2013 for civilian project. This was complimented on the responsible of the Korea Atomic Energy Research Institute for 1{sup st} of June 2013 to 30{sup th} of November 2013. We are going to make sterilization the badge using the gamma ray and supplying the oxygen by nano-bubble oxygen rich water for cultivating the Matsutake Mushroom, instead of the conventional process of sterilization of the badge by hot steam over 120 .deg. C consuming over 8 hours and expensive ventilation system for supplying the fresh air for delivering the oxygen.

  12. The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-01-01

    Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 deg. C, 600 deg. C, 800 deg. C, and 1000 deg. C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 deg. C is determined as optimal annealing temperature for SAW devices. At 400 deg. C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 deg. C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k 2 ) of ZnO film decrease from 3.8% at 600 deg. C to 1.49% at 1000 deg. C.

  13. Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

    Energy Technology Data Exchange (ETDEWEB)

    Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

    2008-03-12

    This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

  14. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Science.gov (United States)

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  15. Environmental Science and Engineering Merit Badges: An Exploratory Case Study of a Non-Formal Science Education Program and the U.S. Scientific and Engineering Practices

    Science.gov (United States)

    Vick, Matthew E.; Garvey, Michael P.

    2016-01-01

    The Boy Scouts of America's Environmental Science and Engineering merit badges are two of their over 120 merit badges offered as a part of a non-formal educational program to U.S. boys. The Scientific and Engineering Practices of the U.S. Next Generation Science Standards provide a vision of science education that includes integrating eight…

  16. Unusual ratio of TL readouts of different discs of personnel monitoring TLD badge based on CaSO4: Dy teflon disc

    International Nuclear Information System (INIS)

    Pradhan, S.M.; Ande, C.D.; Kher, R.K.; Chourasiya, G.; Vashishtha, R.; Gupta, A.K.

    2005-01-01

    In India Personnel Monitoring against external radiation hazard of gamma, beta and X-rays is provided using a TLD badge based on CaSO 4 : Dy Teflon TLD disc. Unusual ratios of TL readouts of different discs of TLD badge (Disc Ratios) observed for service TLD badges of radiation workers were investigated and simulated. Simulations were carried out by exposure of TLD badges by speck type radioactive sources placed in contact of badges, exposure of TLD badges placed on concrete floor to a radiography source. Clues for the simulation were obtained from nature of work, radiological conditions during course of individuals' work whose TLD badges showed the unusual disc ratios and geometrical calculations performed. It is concluded that although the actual exposure condition during use is unknown, the unusual disk ratios observed for the service TLD badges can be simulated and utilized to arrive at probable exposure conditions. The study helped in investigations of the abnormal exposures and assigning doses to the concerned radiation workers. (author)

  17. P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2016-04-30

    Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

  18. Electrical and photoelectrical properties of poly(phenyl azomethine furane) thin films devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, G.D. [J.N.V. Univ., Jodhpur (India). Dept. of Phys.; Sandogaker, S.G. [J.N.V. Univ., Jodhpur (India). Dept. of Phys.; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur (Raj.) (India)

    1996-05-15

    Poly(phenyl azomethine furane) (PPAF), a conjugated system of poly-Schiff base was synthesised by condensation of p-aminobenzene with furane-2-aldehyde. Oxidative polymerization was conducted at 0-5 C temperature, and the polymer formed was found to be soluble in common organic solvent. Optical properties were studied in the UV-visible-IR region. Electrical and photoelectrical properties of Al/PPAF/ITO and Ag/PPAF/ITO sandwich devices were investigated by measuring the steady state photocurrent resulting from illumination. The device Al/PPAF/ITO shows a Schottky barrier at the Al-PPAF interface and ohmic contact at ITO-PPAF interface. The device Ag/PPAF/ITO shows ohmic contact at both interfaces. This behaviour has been explained in terms of P-type conductivity of the PPAF and the formation of a Schottky barrier with the low work function electrode and ohmic contact with the higher work function electrode. Under low forward bias voltage (ITO positive) ohmic conduction is observed while at higher voltage there is space charge-limited conduction (SCLC). The dependence of the photo short-circuit current on illumination intensity was discussed in detail. The C-V characteristics of both devices have also been analysed. (orig.)

  19. Optical NIR-VIS-VUV constants of advanced substrates for thin-film devices

    Czech Academy of Sciences Publication Activity Database

    Chernova, Ekaterina; Brooks, Christopher D.; Chvostová, Dagmar; Bryknar, Z.; Dejneka, Alexandr; Tyunina, Marina

    2017-01-01

    Roč. 7, č. 11 (2017), s. 3844-3862 ISSN 2159-3930 R&D Projects: GA ČR GA15-13778S; GA MŠk EF15_008/0000162; GA ČR GA15-15123S Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 Keywords : ellipsometry * epitaxy * optical properties * single-crystal substrates * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.591, year: 2016

  20. Field-modulation spectroscopy of pentacene thin films using field-effect devices: Reconsideration of the excitonic structure

    Science.gov (United States)

    Haas, Simon; Matsui, Hiroyuki; Hasegawa, Tatsuo

    2010-10-01

    We report pure electric-field effects on the excitonic absorbance of pentacene thin films as measured by unipolar field-effect devices that allowed us to separate the charge accumulation effects. The field-modulated spectra between 1.8 and 2.6 eV can be well fitted with the first derivative curve of Frenkel exciton absorption and its vibronic progression, and at higher energy a field-induced feature appears at around 2.95 eV. The results are in sharp contrast to the electroabsorption spectra reported by Sebastian in previous studies [Chem. Phys. 61, 125 (1981)10.1016/0301-0104(81)85055-0], and leads us to reconsider the excitonic structure including the location of charge-transfer excitons. Nonlinear π -electronic response is discussed based on second-order electro-optic (Kerr) spectra.

  1. Electric field dependent photocurrent generation in a thin-film organic photovoltaic device with a [70]fullerene-benzodifuranone dyad.

    Science.gov (United States)

    Ulmann, Pirmin A; Tanaka, Hideyuki; Matsuo, Yutaka; Xiao, Zuo; Soga, Iwao; Nakamura, Eiichi

    2011-12-21

    A [70]fullerene-benzodifuranone acceptor dyad synthesized by a Ag⁺-mediated coupling reaction was used to construct a thin-film organic solar cell. The fullerene and the benzodifuranone dye in the dyad have close-lying LUMO levels in the range of 3.7-3.9 eV, so that energy transfer from the dye to the fullerene can take place. A p-n heterojunction photovoltaic device consisting of a tetrabenzoporphyrin and a [70]fullerene-benzodifuranone dyad showed a weak but discernible contribution from light absorption of the dyad to the photocurrent under both a positive and a negative effective bias. These results indicate that the benzodifuranone moiety attached to the acceptor contributes to light-harvesting by energy transfer.

  2. Deposition of Al N and Ti N thin films on substrates of stainless steel SS304 using plasma focus device

    International Nuclear Information System (INIS)

    Al-Hawat, Sh.; Soukieh, M.; Abou Kharoub, M.; Al-Sadat, W.

    2006-06-01

    A 2.8 kJ plasma focus device was used to deposit thin films of aluminium nitride Al N and titanium nitride Ti N on a stainless steel 394 substrate, in order to improve its surface properties. The deposition process was carried out using various number of nitrogen plasma shots at pressures 0.5-0.75 mbar and at different sample's distances from the anode. The plasma diagnostics was achieved using the voltage and current signals recorded by a voltage divider and Rogovskii coil to determine the temperature and plasma density. The surface hardness of SS-304 was increased by about 50% after plasma coating and the thickness of the coated layers was about 1-2μm. This study shows that the hardness is increased with increasing the number of shots and decreased with the distance from the anode. The coated layers were characterized and a qualitative understanding of the deposition process was given. (author)

  3. Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices

    Science.gov (United States)

    K, Deepak; Roy, Amit; Anjaneyulu, P.; Kandaiah, Sakthivel; Pinjare, Sampatrao L.

    2017-10-01

    The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism from Ohmic to Space-charge limited conduction when temperature and voltage are varied. The carriers in CuTCA devices exhibit hopping transport, in which carriers hop from one site to the other. The hole mobility in this polymer device is found to be dependent on electric field E ( μpα√{E } ) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient γ and zero-field mobility μ0 are temperature dependent. The values of mobility and activation energies are estimated from temperature (90-140 K) dependent charge transport studies and found to be in the range of 1 × 10-11-8 × 10-12 m2/(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient γ is in the order of 17.8 × 10-4 (m/V)1/2, and the value of zero-field mobility μ0 is in the order of 1.2 × 10-11 m2/(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra.

  4. Ion implantation in superconducting niobium and Nb3 Sn thin films: adjustment of Josephson microbridges and SQUID devices

    International Nuclear Information System (INIS)

    Robic, J.Y.; Piaguet, J.; Duret, D.; Veler, J.C.; Veran, J.L.; Zenatti, D.

    1978-01-01

    The principles of operation of Josephson junctions and SQUIDS are resumed. An ion implantation technique for the adjustment of the critical current is presented. High quality superconducting thin films were obtained by electron gun evaporation of niobium on heated substrates. Polycrystalline Nb 3 Sn was made by annealing (1000 K, 10 -6 Torr) a multilayer structure of successively evaporated niobium and thin films. Selected ions (helium, neon, argon) were implanted at doses ranging from 10 13 to 10 17 cm -2 . After implantation the critical temperature, the critical current and the normal resistivity were measured on special photoetched geometries. The variations of these electrical properties depend on the nuclear energy loss. The critical temperature of Nb 3 Sn is decreased by ion implantation and can be increased again by a new annealing. The parameters of the ion implantation were defined in order to obtain a critical temperature slightly higher than the operating temperature. The geometries of the microbridges and the implanted areas where then chosen to obtain appropriate criticals currents (approximately 10 μA) at the operating temperature. The obtained microbridges were used as junction elements in superconducting quantum interference devices (SQUID)

  5. Laser Beam delivering and shaping device for transfer of organic film

    International Nuclear Information System (INIS)

    Lee, Kangin; Kwon, Jin Hyuk; Yi, Jonghoon

    2008-01-01

    The laser based organic material transfer methods are developed by several groups for OLED (organic light emitting diode)fabrication. Well developed laser based methods are LITI (Laser Induced Thermal Imaging)and LIPS (Laser Induced Pattern wise Sublimation). These methods are proved to be suitable for large OLED panel fabrication. At an early stage of development, TEM"00"mode Nd:YAG laser was used for pattering organic material. The focused focused Nd:YAG laser beam generated heat in the film and the heat caused expansion of organic material coated layer. The organic film on the layer is transferred to the display panel due to pressure exerted on the display panel by the layer. Recently developed system prefers to employ a diode laser with wavelength of 800nm. Diode laser is cheaper and smaller photon source compared with the Nd:YAG laser. In this work, we use Nd doped fiber laser (wavelength=1070nm, power=10W)because the laser has stable output and well defined Gaussian beam profile compared with diode laser. We also employed fiber coupled diode laser (808nm)because it also has well defined beam distribution. In laser methods, spatially shaped beam is required for clean and sharp transfer. There are several methods for the beam shaping such as aspheric lens, diffractive optical elements, and micro lens array etc. We found that Gaussian beam can be shaped to a square hat like beam just by using simple commercial spherical lens set

  6. Thin-Film LSCs Based on PMMA Nanohybrid Coatings: Device Optimization and Outdoor Performance

    Directory of Open Access Journals (Sweden)

    S. M. El-Bashir

    2013-01-01

    Full Text Available This study concerns the design optimization of thin-film luminescent solar concentrators (TLSCs based on polymethylmethacrylate (PMMA/silica nanohybrid films doped with coumarin dyestuffs specialized in coloring plastics. Two designs of TLSCs had been prepared and characterized. The first consists of a transparent nanohybrid layer coated on a fluorescent PMMA substrate. The second design is the ordinary configuration in which fluorescent nanohybrid layer is coated on a transparent PMMA substrate. The investigation of the spectral properties and efficiency parameters recommended the best solar energy conversion efficiency for the second design. The outdoor performance of optimized TLSC was also evaluated under clear sky conditions of Riyadh city, and the hourly values of the optical efficiency, ηopt, were calculated for one year. The best performance was achieved in summer since the short circuit current for PV cell was doubled after being attached to TLSC and the value of ηopt reached 40% which is higher than other values recorded before due to the abundant solar energy potential in the Arabian Peninsula.

  7. Deposition and Characterization of Hermetic, Biocompatible Thin Film Coatings for Implantable, Electrically Active Devices

    Science.gov (United States)

    Sweitzer, Robyn K.

    Retinal prostheses may be used to support patients suffering from Age-related macular degeneration or retinitis pigmentosa. A hermetic encapsulation of the poly(imide )-based prosthesis is important in order to prevent the leakage of water and ions into the electric circuitry embedded in the poly(imide) matrix. The deposition of amorphous aluminum oxide (by sputtering) and diamond like carbon (by pulsed laser ablation and vacuum arc vapor deposition) were studied for the application in retinal prostheses. The resulting thin films were characterized for composition, thickness, adhesion and smoothness by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy, profilometry and light microscopy. Electrical stability was evaluated and found to be good. The as-deposited films prevented incursion of salinated fluids into the implant over two (2) three month trials soaking in normal saline at body temperature, Biocompatibility was tested in vivo by implanting coated specimen subretinally in the eye of Yucatan pigs. While amorphous aluminum oxide is more readily deposited with sufficient adhesion quality, biocompatibility studies showed a superior behavior of diamond-like carbon. Amorphous aluminum oxide had more adverse effects and caused more severe damage to the retinal tissue.

  8. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Science.gov (United States)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  9. Thin film coatings for new generation infrared thermal picture synthesising devices

    International Nuclear Information System (INIS)

    Rodriguez, J.V.A.

    2001-01-01

    The usefulness of infrared imaging devices has been proved by the continuous marketing of such products for more than 10 years. The need to produce thermal images with high apparent temperature values (600-800 deg. C) in the 3-5 micron waveband, mean that the operating temperature of the device pixels must be high. Such high temperature operation compromises the lifetime and switching speed of the pixels. It is hence desired that the real temperature of the pixels is kept as low as possible to achieve the desired apparent temperature. This requires coating the pixels with a high emissivity coating in the infrared. Current devices have multi-layer double resonating cavity interference structures built on their top surface. These structures enhance the emissivity of the pixels to a value around 50%. However, the manufacturing of such structures on top of the delicate pixels is time intensive and involves many delicate processes, which increase the probability of device failure during manufacture. The work presented in this thesis aims at achieving a simple and quick process that will provide the pixels with a single high emissivity coating. The process is carried out using standard cleanroom equipment with the coating aimed at being than one micron thick, and being able to withstand the operating temperatures of the pixel under ambient atmospheres. The work concludes with an optimised sputter-deposition process of two coatings with a combined thickness of 7000A, followed by annealing at 700 deg. C. This process achieves a coating with an emissivity of 84%. The work also describes the deposition of a thermally stable SiC coating which is highly transparent in the infrared. (author)

  10. Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

    2016-08-01

    Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

  11. Improved propagation margin in YIG coated LPE garnet films for bubble devices

    International Nuclear Information System (INIS)

    Hidaka, Y.; Yoshimi, K.; Hibiya, T.; Mikami, M.

    1975-01-01

    YIG thin layers grown on (Y,Eu,Yb) 3 (Fe,Ga) 5 O 12 LPE films were found to be very effective for improvement of bubble propagation margin as well as for hard bubble suppression. In the ion-implanted rare earth substituted Ga:YIG on (111) GGG with 8 micron bubble, T-bar propagation margin was diminished, because of stretching or oscillating of bubble along the patterns. A 600 A YIG thin layer with in-plane magnetization, grown by CVD at 1065 0 C, obviated these destructive shortcomings and guaranteed the minimum driving field for stable bubble propagation down to 10 Oe. This improvement can be attributed to the magnetostatic interaction between the YIG layer and the bubble supporting layer. (auth)

  12. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    Science.gov (United States)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

  13. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    International Nuclear Information System (INIS)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (Ba x Sr 1-x )Ti 1+y O 3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba 0.5 Sr 0.5 TiO 3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O 2 ) process pressure, while the O 2 /Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. (c) 2000 American Institute of Physics

  14. Real-time monitoring of luminescent lifetime changes of PtOEP oxygen sensing film with LED/photodiode-based time-domain lifetime device.

    Science.gov (United States)

    Ji, Shaomin; Wu, Wanhua; Wu, Yubo; Zhao, Taiyang; Zhou, Fuke; Yang, Yubin; Zhang, Xin; Liang, Xiaofen; Wu, Wenting; Chi, Lina; Wang, Zhonggang; Zhao, Jianzhang

    2009-05-01

    A cost-effective LED/photodiode(PD)-based time-domain luminescent lifetime measuring device with rugged electronics and simplified algorithms was assembled and successfully used to characterize oxygen sensing films, by continuously monitoring phosphorescence lifetime changes of phosphorescent platinum octaethylporphyrin (PtOEP) in cardo poly(aryl ether ketone) polymer (IMPEK-C) vs. variation of the oxygen partial pressure in a gas mixture (O(2)/N(2)). The results determined by both phosphorescence lifetime and intensity monitoring were compared and the lifetime mode gave results which are in good agreement with the intensity mode. The lifetime-based linear Stern-Volmer plot indicates that the PtOEP molecules are nearly homogeneously distributed in the sensing film. The phosphorescent lifetime of the PtOEP film changes from 75 micros in neat N(2) to less than 2 micros in neat O(2). The sensing system (by combination of the PtOEP sensing film with the home-assembled lifetime device) gives a high lifetime-based O(2) sensing resolution, e.g. about 2 micros Torr(-1) for low O(2) concentration (below 3.5% O(2), V/V). This feasible lifetime device configuration is affordable to most sensor laboratories and the device may facilitate the study of O(2) sensing material with the continuous lifetime monitoring method.

  15. Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard A.; Hannon, James B.; Oida, Satoshi

    2018-04-03

    A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

  16. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyung Hyun; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Na, Kyoung-Hoan, E-mail: khna@dankook.ac.kr [College of Engineering, Dankook University, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2015-10-15

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm–200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, R{sub a}=2.59 nm) on indium–tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current–voltage hysteresis and well over 1 h retentivity, and R{sub OFF}/R{sub ON}≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  17. Effects of the Badge Mechanism on Self-Efficacy and Learning Performance in a Game-Based English Learning Environment

    Science.gov (United States)

    Yang, Jie Chi; Quadir, Benazir; Chen, Nian-Shing

    2016-01-01

    A growing number of studies have been conducted on digital game-based learning (DGBL). However, there has been a lack of attention paid to individuals' self-efficacy and learning performance in the implementation of DGBL. This study therefore investigated how the badge mechanism in DGBL enhanced users' self-efficacy in the subject domain of…

  18. Electrical and optical properties of diketopyrrolopyrrole-based copolymer interfaces in thin film devices.

    Science.gov (United States)

    Adil, Danish; Kanimozhi, Catherine; Ukah, Ndubuisi; Paudel, Keshab; Patil, Satish; Guha, Suchi

    2011-05-01

    Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

  19. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Science.gov (United States)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  20. Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

    2016-12-30

    Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

  1. Comparing different error-conditions in film dosemeter evaluation

    International Nuclear Information System (INIS)

    Roed, H.; Figel, M.

    2007-01-01

    In the evaluation of a film used as a personal dosemeter it may be necessary to mark the dosemeters when possible error-conditions are recognised, such as errors that have an influence on the ability to make a correct evaluation of the dose value. In this project a comparison has been carried out to examine how two individual monitoring services, IMS [National Inst. of Radiation Hygiene (Denmark) (NIRH) and National Research Centre for Environment and Health (Germany) (GSF)], from two different EU countries mark their dosemeters. The IMS are different in size, type of customers and issuing period, but both use films as their primary dosemeters. The error-conditions examined are dosemeters exposed to moisture or light, contaminated dosemeters, films exposed outside the badge, missing filters in the badge, films inserted incorrectly in the badge and dosemeters not returned or returned too late to the IMS. The data are collected for the year 2003 where NIRH evaluated ∼50,000 and GSF ∼1.4 million film dosemeters. The percentage of film dosemeters is calculated for each error-condition as well as the distribution among eight different employee categories, i.e. medicine, nuclear medicine, nuclear industry, industry, radiography, laboratories, veterinary and others. It turned out, that incorrect insertion of the film in the badge was the most common error-condition observed at both IMS and that veterinarians, as the employee category, generally have the highest number of errors. NIRH has a significantly higher relative number of dosemeters in most error-conditions than GSF, which perhaps reflects that a comparison is difficult due to different systemic and methodical differences between the IMS and countries, e.g. regulations and monitoring programs etc. Also the non-existence of a common categorisation method for employee categories contributes to make a comparison like this difficult. (authors)

  2. Preparation and characterization of electroluminescent devices based on complexes of β-diketonates of Tb3+, Eu3+, Gd3+ ions with macrocyclic ligands and UO22+ films

    International Nuclear Information System (INIS)

    Gibelli, Edison Bessa

    2010-01-01

    Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR 3+ ) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth β-diketonate complexes (Tb 3+ , Eu 3+ and Gd 3+ ) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO 2 2+ . The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

  3. Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Figus, Cristiana, E-mail: cristiana.figus@dsf.unica.it; Quochi, Francesco, E-mail: cristiana.figus@dsf.unica.it; Artizzu, Flavia, E-mail: cristiana.figus@dsf.unica.it; Saba, Michele, E-mail: cristiana.figus@dsf.unica.it; Marongiu, Daniela, E-mail: cristiana.figus@dsf.unica.it; Mura, Andrea; Bongiovanni, Giovanni [Dipartimento di Fisica - University of Cagliari, S.P. Km 0.7, I-09042 Monserrato (Canada) (Italy); Floris, Francesco; Marabelli, Franco; Patrini, Maddalena; Fornasari, Lucia [Dipartimento di Fisica - University of Pavia, Via Agostino Bassi 6, I-27100 Pavia (PV) (Italy); Pellacani, Paola; Valsesia, Andrea [Plasmore S.r.l. -Via Grazia Deledda 4, I-21020 Ranco (Vatican City State, Holy See) (Italy)

    2014-10-21

    Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

  4. Matrix effect on leaching of Bisphenol A diglycidyl ether (BADGE) from epoxy resin based inner lacquer of aluminium tubes into semi-solid dosage forms.

    Science.gov (United States)

    Lipke, Uwe; Haverkamp, Jan Boris; Zapf, Thomas; Lipperheide, Cornelia

    2016-04-01

    To study the impact of different semi-solid dosage form components on the leaching of Bisphenol A (BPA) and Bisphenol A diglycidyl ether (BADGE) from the epoxy resin-based inner lacquer of aluminium tubes, the tubes were filled with different matrix preparations and stored at an elevated temperature. Despite compliance with the European Standards EN 15348 and EN 15766 on porosity and polymerisation of internal coatings of aluminium tubes, the commercially available tubes used in the study contained an increased amount of polymerisation residues, such as unbound BPA, BADGE and BADGE derivatives in the lacquer, as determined by acetonitrile extraction. Storage of Macrogol ointments in these tubes resulted in an almost quantitative migration of the unbound polymerisation residues from the coating into the ointment. In addition, due to alterations observed in the RP-HPLC chromatograms of the matrix spiked with BADGE and BADGE derivatives it is supposed that the leachates can react with formulation components. The contamination of the medicinal product by BPA, BADGE and BADGE derivatives can be precluded by using aluminium tubes with an internal lacquer with a low degree of unbound polymerisation residues. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

  5. Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

    Science.gov (United States)

    Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

    2018-04-01

    In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

  6. Perovskite single crystals and thin films for optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Li, Gang; Han, Qifeng; Yang, Yang; Bae, Sang-Hoon; Sun, Pengyu

    2016-09-01

    Hybrid organolead trihalide perovskite (OTP) solar cells have developed as a promising candidate in photovoltaics due to their excellent properties including a direct bandgap, strong absorption coefficient, long carrier lifetime, and high mobility. Most recently, formamidinium (NH2CH=NH2+ or FA) lead iodide (FAPbI3) has attracted significant attention due to several advantages: (1) the larger organic FA cation can replace the MA cation and form a more symmetric crystal structure, (2) the smaller bandgap of FAPbI3 allows for near infrared (NIR) absorption, and (3) FAPbI3 has an elevated decomposition temperature and thus potential to improve stability. Single crystals provide an excellent model system to study the intrinsic electrical and optical properties of these materials due to their high purity, which is particularly important to understand the limits of these materials. In this work, we report the growth of large ( 5 millimeter size) single crystal FAPbI3 using a novel liquid based crystallization method. The single crystal FAPbI3 demonstrated a δ-phase to α-phase transition with a color change from yellow to black when heated to 185°C within approximately two minutes. The crystal structures of the two phases were identified and the PL emission peak of the α-phase FAPbI3 (820 nm) shows clear red-shift compared to the FAPbI3 thin film (805 nm). The FAPbI3 single crystal shows a long carrier lifetime of 484 ns, a high carrier mobility of 4.4 cm2·V-1·s-1, and even more interestingly a conductivity of 1.1 × 10-7(ohm·cm)-1, which is approximately one order of magnitude higher than that of the MAPbI3 single crystal. Finally, high performance photoconductivity type photodetectors were successfully demonstrated using the single crystal FAPbI3.

  7. The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

    International Nuclear Information System (INIS)

    Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

  8. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  9. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  10. First report on synthesis of ZnFe_2O_4 thin film using successive ionic layer adsorption and reaction: Approach towards solid-state symmetric supercapacitor device

    International Nuclear Information System (INIS)

    Raut, Shrikant S.; Sankapal, Babasaheb R.

    2016-01-01

    Highlights: • First report on synthesis of ZnFe_2O_4 thin film using SILAR method. • ZnFe_2O_4 electrode yields the specific capacitance of 471 Fg"−"1 at a scan rate of 5 mV s"−"1 in 1 M NaOH aqueous solution. • Solid-state symmetric supercapacitor device based on ZnFe_2O_4 sandwiched in polyvinyl alcohol (PVA)–LiClO_4 gel electrolyte exhibits voltage windows of 1.0 V. • ZnFe_2O_4-SSS supercapacitor device shows good energy and power density with long cycle life. - Abstract: ZnFe_2O_4 thin film has been synthesized by a simple and low cost successive ionic layer adsorption and reaction (SILAR) method without the use of surfactant or template. The nanoplate composed of nanoparticles with porous surface morphology has been revealed which is beneficial towards supercapacitor application. Formed ZnFe_2O_4 thin film has been tested as an electrode material for supercapacitor through electrochemical analysis. First attempt for SILAR synthesized ZnFe_2O_4 thin film exhibited a specific capacitance of 471 Fg"−"1 at a scan rate of 5 mVs"−"1 in 1 M NaOH aqueous solution. Further, ZnFe_2O_4 solid-state symmetric (SSS) supercapacitor device demonstrated voltage window of 1.0 V with specific capacitance of 32 Fg"−"1, energy density of 4.47 Whkg"−"1 and power density of 277 Wkg"−"1 at 1 Ag"−"1 current density. Such high performance capacitive behavior indicates ZnFe_2O_4 thin film is promising and low cost electrode material towards energy storage devices for various portable electronic systems.

  11. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  12. Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

    Science.gov (United States)

    Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

    2018-04-01

    We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

  13. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  14. General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

    KAUST Repository

    Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

    2016-01-01

    ) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

  15. Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, Hakan, E-mail: hkaraagac@ucdavis.edu [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States); Yengel, Emre; Saif Islam, M. [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States)

    2012-04-25

    Highlights: Black-Right-Pointing-Pointer Undoped and Al doped ZnO (AZO) thin films were successfully prepared using sol-gel technique. Black-Right-Pointing-Pointer Structural analysis has revealed that Al doping has a significant influence on preferential orientation. Black-Right-Pointing-Pointer It has been observed that wrinkles forms on the surface of films when annealed with a fast heat ramp up rate. Black-Right-Pointing-Pointer Optical analysis has revealed that that the band gap energy of ZnO thin film increases with increasing Al doping concentration. Black-Right-Pointing-Pointer The lowest resistivity is observed for 1% Al ZnO thin film, which is 2.2 Multiplication-Sign 10{sup -2} ({Omega} cm). - Abstract: ZnO and some of its ternary wide-bandgap alloys offer interesting opportunities for designing materials with tunable band gaps, strong piezoresistivity and controlled electrical conductance with high optical transparency. Synthesizing these materials on arbitrary substrates using low-cost and unconventional techniques can help in integrating semiconductors with different physical, electrical, and optical characteristics on a single substrate for heterogeneous integration of multifunctional devices. Here we report the successful synthesis of aluminum (Al) doped ZnO (AZO) thin films on soda-lime glass, silicon and fluorine doped tin oxide (FTO) pre-coated glass substrates by using sol-gel deposition method at ambient condition. X-ray diffraction (XRD) analysis revealed that varying degree of Al doping significantly impacts the crystal orientation, semiconductor bandgap and optical transparency of the film. Crystal structure of the film is also found to be strongly correlated to the characteristics of the substrate material. The impact of heating rate during post annealing process is studied and optimized in order to improve the surface morphology of the deposited films. Optical characterizations have revealed that bandgap energy of AZO films can be tuned

  16. Thin films

    International Nuclear Information System (INIS)

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  17. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  18. Chlorohydrins of bisphenol A diglycidyl ether (BADGE) and of bisphenol F diglycidyl ether (BFDGE) in canned foods and ready-to-drink coffees from the Japanese market.

    Science.gov (United States)

    Uematsu, Y; Hirata, K; Suzuki, K; Iida, K; Saito, K

    2001-02-01

    BADGE.2HCl and BFDGE.2HCl were determined in 28 samples of ready-to-drink canned coffee and 18 samples of canned vegetables (10 corn, 5 tomatoes and 3 others), all from the Japanese market. HPLC was used as the principal analytical method and GC-MS for confirmation of relevant LC fractions. BADGE.2HCl was found to be present in one canned coffee and five samples of corn, BFDGE.2HCl in four samples of canned tomatoes and in one canned corn. No sample was found which exceeded the 1 mg/kg limit of the EU for the BADGE chlorohydrins. However the highest concentration was found for the sum of BFDGE.2HCl anti BFDGE.HCl.H2O at a level of 1.5 mg/kg. A Beilstein test confirmed that all cans containing foods contaminated with BADGE.2HCl or BFDGE.2HCl had at lest one part coated with a PVC organosol.

  19. Device quality InO{sub x}:Sn and InO{sub x} thin films deposited at room temperature with different rf-power densities

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, A., E-mail: ana.de.amaral@ist.utl.pt [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Brogueira, P. [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Conde, O. [Universidade de Lisboa, Dept. de Fisica and ICEMS, Campo Grande, 1749-016 Lisboa (Portugal); Lavareda, G. [Dept. de Ciencia dos Materiais and CTS, FCT-UNL, 2829-516 Caparica (Portugal); Nunes de Carvalho, C. [Dept. de Ciencia dos Materiais, FCT-UNL and ICEMS, 2829-516 Caparica (Portugal)

    2012-12-30

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm{sup 2} and 58.6 mW/cm{sup 2} as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 Multiplication-Sign 10{sup -4} {Omega}{center_dot}cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm{sup 2} from a 5% Sn alloy or at 19.5 mW/cm{sup 2} from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: Black-Right-Pointing-Pointer InO{sub x}:Sn and InO{sub x} thin films were deposited at room temperature. Black-Right-Pointing-Pointer Transparency and electrical resistivity are relatively independent of Sn content. Black-Right-Pointing-Pointer Device quality material was obtained. Black-Right-Pointing-Pointer The surface morphology homogeneity of the films varies with tin content.

  20. Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

    International Nuclear Information System (INIS)

    Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; Nunes de Carvalho, C.

    2012-01-01

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95–80) % In:(5–20) % Sn alloys as evaporation sources and 19.5 mW/cm 2 and 58.6 mW/cm 2 as rf-power densities. The two most important macroscopic properties – visible transparency and electrical resistivity – are relatively independent of tin content (0–20%). Visible transmittance of about 75% and electrical resistivity around 5 × 10 −4 Ω·cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm 2 from a 5% Sn alloy or at 19.5 mW/cm 2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: ► InO x :Sn and InO x thin films were deposited at room temperature. ► Transparency and electrical resistivity are relatively independent of Sn content. ► Device quality material was obtained. ► The surface morphology homogeneity of the films varies with tin content.

  1. Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Aparicio, R.; Dobson, K.

    2003-01-01

    This report describes results achieved during a three-year subcontract to develop and understand thin-film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

  2. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  3. Superconducting (YBa2Cu3O7-δ) and manganite (La0.7Sr0.3MnO3) oxide thin film based devices

    International Nuclear Information System (INIS)

    Mechin, Laurence

    2005-01-01

    This manuscript presents my research activity since my PhD thesis defended in 1993. I mainly worked on two types of oxides: YBCO et LSMO. I always kept in mind the development of devices as a whole, i.e. from the thin film to the device characterization. One part of my work has been devoted to the study of structural, electrical or magnetic properties of the thin films in order to optimize deposition conditions. Both YBCO and LSMO oxides present a perovskite structure and require similar deposition conditions (700 - 750 C in O 2 pressure). I used three deposition methods: pulsed laser deposition, on axis high pressure sputtering and RF off axis sputtering. (author)

  4. Syntheses and characterization of thin films of Te{sub 94}Se{sub 6} nanoparticles for semiconducting and optical devices

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Habib, Sami S.; Memic, Adnan [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alharbi, Najlaa D. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Sciences Faculty for Girls, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Babkair, Saeed S. [Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Khan, Zishan H. [Department of Applied Sciences and Humanities, Jamia Millia Islamia (Central University), New Delhi-110025 (India)

    2013-03-01

    Thin films of Te{sub 94}Se{sub 6} nanoparticles were synthesized using the physical vapor condensation technique at different argon (Ar) pressures. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy, absorption spectrum, photoluminescence (PL) and Raman spectroscopy. XRD results show that the as-grown films have a polycrystalline structure. SEM images display uniform nanoparticles in these films where the size increases from ∼ 12 to about 60 nm by decreasing Ar pressure from 667 to 267 Pa. These as-grown thin films were found to have direct band gaps, whose value decreases with increasing particle size. The absorption and extinction coefficients for these films were also investigated. PL emission spectra exhibit three bands peaking at 666, 718 and 760 nm, while Raman spectra displayed three bands located at 123, 143 and 169 cm{sup −1}. No significant changes are observed in positions or intensities of these bands by decreasing the Ar pressure, except that of the last band of PL; where the intensity increases. The obtained results on this Te{sub 94}Se{sub 6} nanomaterial especially its controlled direct bandgap might be useful for development of optical disks and other semiconducting devices. - Highlights: ► Thin films of Te{sub 94}Se{sub 6} nanoparticles were grown at different argon (Ar) pressures. ► Size of the nanoparticles increased by decreasing Ar pressure. ► They have direct band gap, whose value decreases by increasing the particle size. ► These nanomaterials might be useful for development of semiconducting devices.

  5. High-performance electrochromic device based on nanocellulose/polyaniline and nanocellulose/poly(3,4-ethylenedioxythiophene) composite thin films

    Science.gov (United States)

    Zhang, Sihang; Fu, Runfang; Du, Zoufei; Jiang, Mengjin; Zhou, Mi; Gu, Yingchun; Chen, Sheng

    2017-07-01

    With the development of nanotechnology, nanocomposite materials based on renewable resources are the focus of this research. Nanocellulose was prepared using sulfuric acid to swell cotton pulp, following with extensive ultrasonication. Nanocellulose/polyaniline (NC/PANI) and nanocellulose/poly(3,4-ethylenedioxythiophene) (NC/PEDOT) nanocomposites with core/shell structure were manufactured by in situ polymerization. The film-forming properties and electrochromic properties of PANI and PEDOT were significantly improved using the nanocellulose as matrix. NC/PANI and NC/PEDOT composite films were studied in single and dual electrochromic devices (ECDs). A viscous gel electrolyte (GE) was used in ECDs. The architectural design of single and dual device was ITO/NC-PANI/GE/ITO or ITO/NC-PEDOT/GE/ITO and ITO/NC-PANI/GE/NC-PEDOT/ITO, respectively. The dual ECD based on NC/PANI and NC/PEDOT composite films exhibited a higher color contrast (30.3%), shortest response time (1.5 s for bleaching and 1.9 s for coloring), largest coloration efficiency (241.6 C/cm2), and best cycling stability (over 150 cycles) compared with the single devices.

  6. A backing device based on an embedded stiffener and retractable insertion tool for thin-film cochlear arrays

    Science.gov (United States)

    Tewari, Radheshyam

    Intracochlear trauma from surgical insertion of bulky electrode arrays and inadequate pitch perception are areas of concern with current hand-assembled commercial cochlear implants. Parylene thin-film arrays with higher electrode densities and lower profiles are a potential solution, but lack rigidity and hence depend on manually fabricated permanently attached polyethylene terephthalate (PET) tubing based bulky backing devices. As a solution, we investigated a new backing device with two sub-systems. The first sub-system is a thin poly(lactic acid) (PLA) stiffener that will be embedded in the parylene array. The second sub-system is an attaching and detaching mechanism, utilizing a poly(N-vinylpyrrolidone)-block-poly(d,l-lactide) (PVP-b-PDLLA) copolymer-based biodegradable and water soluble adhesive, that will help to retract the PET insertion tool after implantation. As a proof-of-concept of sub-system one, a microfabrication process for patterning PLA stiffeners embedded in parylene has been developed. Conventional hot-embossing, mechanical micromachining, and standard cleanroom processes were integrated for patterning fully released and discrete stiffeners coated with parylene. The released embedded stiffeners were thermoformed to demonstrate that imparting perimodiolar shapes to stiffener-embedded arrays will be possible. The developed process when integrated with the array fabrication process will allow fabrication of stiffener-embedded arrays in a single process. As a proof-of-concept of sub-system two, the feasibility of the attaching and detaching mechanism was demonstrated by adhering 1x and 1.5x scale PET tube-based insertion tools and PLA stiffeners embedded in parylene using the copolymer adhesive. The attached devices survived qualitative adhesion tests, thermoforming, and flexing. The viability of the detaching mechanism was tested by aging the assemblies in-vitro in phosphate buffer solution. The average detachment times, 2.6 minutes and 10 minutes

  7. Electrochemistry of poly(3,4-ethylenedioxythiophene)-polyaniline/ Prussian blue electrochromic devices containing an ionic liquid based gel electrolyte film.

    Science.gov (United States)

    Deepa, Melepurath; Awadhia, Arvind; Bhandari, Shweta

    2009-07-21

    Electrochromic devices based on poly(3,4-ethylenedioxythiophene) (PEDOT) as the cathodic coloring electrode and polyaniline (PANI) or Prussian blue (PB) as the counter electrode containing a highly conductive, self-supporting, distensible and transparent polymer-gel electrolyte film encapsulating an ionic liquid, 1-butyl-1-methylpyrrolidiniumbis-(trifluoromethylsulfonyl)imide, have been fabricated. Polarization, charge transfer and diffusion processes control the electrochemistry of the functional electrodes during coloration and bleaching and these phenomena differ when PEDOT and PANI/PB were employed alternately as working electrodes. While the electrochemical impedance response shows good similitude for PEDOT and PANI electrodes, the responses of PEDOT and PB were significantly different in the PEDOT-PB device, especially during reduction of PB, wherein the overall amplitude of the impedance response is enormous. Large values of the coloration efficiency maxima of 281 cm2 C(-1) (lambda = 583 nm) and 274 cm2 C(-1) (lambda = 602 nm), achieved at -1.0 and -1.5 V for the PEDOT PANI and PEDOT-PB devices have been correlated to the particularly low magnitude of charge transfer resistance and high polarization capacitance operative at the PEDOT ionic liquid based electrolyte interface at these dc potentials, thus allowing facile ion-transport and consequently resulting in enhanced absorption modulation. Moderately fast switching kinetics and the ability of these devices to sustain about 2500 cycles of clear-to-dark and dark-to-clear without incurring major losses in the optical contrast, along with the ease of construction of these cells in terms of high scalability and reproducibility of the synthetic procedure for fabrication of the electrochromic films and the ionic liquid based gel electrolyte film, are indicators of the promise these devices hold for practical applications like electrochromic windows and displays.

  8. Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices.

    Science.gov (United States)

    Eslamian, Morteza; Zabihi, Fatemeh

    2015-12-01

    A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic "substrate vibration-assisted drop casting" (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few similar reports by others, confirm that imposing ultrasonic vibration on the substrate can simply convert the uncontrollable drop casting method into a controllable coating technique. Therefore, the SVADC may be used to fabricate an array of emerging thin-film solar cells, such as polymer, perovskite, and quantum-dot solar cells, as well as other small thin-film devices, in a roll-to-roll and automated fabrication process. The preliminary results demonstrate a ten-fold increase in electrical conductivity of PSS made by SVADC compared with the film made by conventional drop casting. Also, simple planar perovskite solar cells made here using SVADC show promising performance with an efficiency of over 3 % for a simple structure without performing process optimization or using expensive materials and treatments.

  9. Design of photon energy compensation filters for the new four element CaSO4:Dy TLD badge

    International Nuclear Information System (INIS)

    Mishra, D.R.; Kulkarni, M.S.; Pradeep, Ratna; Kannan, S.

    2001-01-01

    A new four element TLD badge using CaSO 4 :Dy is being developed for the estimation of personal dose equivalents Hp(10) and Hp(0.07) and to discriminate them in the mix field (low energy x-ray and high energy γ-ray). Design of energy compensation filters for the new TLD badge is discussed. The total metal filter thickness is kept less than 1 mm. The first and second elements of the badge are planned to be open and plastic (≅180 gm/cm 2 ) window. For the third element a combination of 0.2 mm Sn + 0.7mm Cu + 0.1 mm Al with mass thickness ≅ 1100 mg/cm 2 is proposed which gives energy dependent response similar to Hp(10) within ± 20% (above 80 keV). For the fourth dosimeter a filter combination of 0.4 mm Al + 0.07 mm Sn is proposed which gives Hp(10)xR response for diagnostic x-rays within ± 10% in the mix field. (author)

  10. Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

    Science.gov (United States)

    Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

    2018-03-01

    For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

  11. RFID and Memory Devices Fabricated Integrally on Substrates

    Science.gov (United States)

    Schramm, Harry F.

    2004-01-01

    Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

  12. Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Gandla, Srinivas; Gollu, Sankara Rao; Sharma, Ramakant; Sarangi, Venkateshwarlu; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-10-12

    In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

  13. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Directory of Open Access Journals (Sweden)

    Robert L. Z. Hoye

    2015-04-01

    Full Text Available Atmospheric pressure spatial atomic layer deposition (AP-SALD has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  14. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Energy Technology Data Exchange (ETDEWEB)

    Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Muñoz-Rojas, David [LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France); Nelson, Shelby F. [Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States); Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Roozeboom, Fred [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB (Netherlands)

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  15. Evaluation of two-dimensional bolus effect of immobilization/support devices on skin doses: A radiochromic EBT film dosimetry study in phantom

    International Nuclear Information System (INIS)

    Chiu-Tsao, Sou-Tung; Chan, Maria F.

    2010-01-01

    Purpose: In this study, the authors have quantified the two-dimensional (2D) perspective of skin dose increase using EBT film dosimetry in phantom in the presence of patient immobilization devices during conventional and IMRT treatments. Methods: For 6 MV conventional photon field, the authors evaluated and quantified the 2D bolus effect on skin doses for six different common patient immobilization/support devices, including carbon fiber grid with Mylar sheet, Orfit carbon fiber base plate, balsa wood board, Styrofoam, perforated AquaPlast sheet, and alpha-cradle. For 6 and 15 MV IMRT fields, a stack of two film layers positioned above a solid phantom was exposed at the air interface or in the presence of a patient alpha-cradle. All the films were scanned and the pixel values were converted to doses based on an established calibration curve. The authors determined the 2D skin dose distributions, isodose curves, and cross-sectional profiles at the surface layers with or without the immobilization/support device. The authors also generated and compared the dose area histograms (DAHs) and dose area products from the 2D skin dose distributions. Results: In contrast with 20% relative dose [(RD) dose relative to d max on central axis] at 0.0153 cm in the film layer for 6 MV 10x10 cm 2 open field, the average RDs at the same depth in the film layer were 71%, 69%, 55%, and 57% for Orfit, balsa wood, Styrofoam, and alpha-cradle, respectively. At the same depth, the RDs were 54% under a strut and 26% between neighboring struts of a carbon fiber grid with Mylar sheet, and between 34% and 56% for stretched perforated AquaPlast sheet. In the presence of the alpha-cradle for the 6 MV (15 MV) IMRT fields, the hot spot doses at the effective measurement depths of 0.0153 and 0.0459 cm were 140% and 150% (83% and 89%), respectively, of the isocenter dose. The enhancement factor was defined as the ratio of a given DAH parameter (minimum dose received in a given area) with and without

  16. 3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

    Energy Technology Data Exchange (ETDEWEB)

    Wahab, Qamar ul.

    1994-01-01

    Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH[sub 4] discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures [<=] 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH[sub 4] partial pressure (PCH[sub 4]) and stoichiometric composition can only be obtained in a narrow PCH[sub 4] range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T[sub s]=850 degrees C and PCH[sub 4]=0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO[sub 2] layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 [mu]A cm[sup -2], a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor structures were fabricated by thermally grown SiO[sub 2] on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10[sup 11] cm[sup -2] eV[sup -1]. Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V.

  17. 3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

    International Nuclear Information System (INIS)

    Wahab, Qamar ul.

    1994-01-01

    Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH 4 discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures ≤ 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH 4 partial pressure (PCH 4 ) and stoichiometric composition can only be obtained in a narrow PCH 4 range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T s =850 degrees C and PCH 4 =0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO 2 layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 μA cm -2 , a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor (MOS) structures were fabricated by thermally grown SiO 2 on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10 11 cm -2 eV -1 . Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V. 59 refs, figs, tabs

  18. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  19. Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices

    International Nuclear Information System (INIS)

    Liu Junfu; Nistorica, Corina; Gory, Igor; Skidmore, George; Mantiziba, Fadziso M.; Gnade, Bruce E.

    2005-01-01

    This work reports layer-by-layer deposition of zirconium oxide on a Si surface from aqueous solutions using the successive ionic layer adsorption and reaction technique. The process consists of repeated cycles of adsorption of zirconium precursors, water rinse, and hydrolysis. The film composition was determined by X-ray photoelectron spectroscopy. The film thickness was determined by Rutherford backscattering spectrometry, by measuring the Zr atom concentration. The average deposition rate from a 0.1 M Zr(SO 4 ) 2 solution on a SiO 2 /Si surface is 0.62 nm per cycle. Increasing the acidity of the zirconium precursor solution inhibits the deposition of the zirconium oxide film. Atomic force microscopy shows that the zirconium oxide film consists of nanoparticles of 10-50 nm in the lateral dimension. The surface roughness increased with increasing number of deposition cycles. Friction measurements made with a microelectromechanical system device reveal a reduction of 45% in the friction coefficient of zirconium oxide-coated surfaces vs. uncoated surfaces in air

  20. Electrical characterization of MIS devices using PECVD SiN{sub x}:H films for application of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Jin-Su; Cho, Jun-Sik; Park, Joo-Hyung; Ahn, Seung-Kyu; Shin, Kee-Shik; Yoon, Kyung-Hoon [Korea Institute of Energy Research, Daejeon (Korea, Republic of); Yi, Jun-Sin [Sungkyunkwan University, Suwon (Korea, Republic of)

    2012-07-15

    The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiN{sub x}:H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiN{sub x}:H thin films were deposited by varying the gas ratio R (=NH{sub 3}/SiH{sub 4}+NH{sub 3}) and were annealed by rapid thermal processing (RTP). Metal-insulator- semiconductor (MIS) devices were fabricated using SiN{sub x}:H thin films as insulator layers and they were analyzed in the temperature range of 100 - 400 K by using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The annealed SiN{sub x}:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm x 156 mm) crystalline-silicon solar cells.

  1. Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices

    Science.gov (United States)

    Mao, Howard; Alhalaili, Badriyah; Kaya, Ahmet; Dryden, Daniel M.; Woodall, Jerry M.; Islam, M. Saif

    2017-08-01

    A very simple and inexpensive method for growing β-Ga2O3 films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga2O3 nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga2O3 film and nanowires.

  2. Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

    International Nuclear Information System (INIS)

    Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru

    2007-01-01

    Cu(In,Ga)Se 2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber

  3. Lowering of L10 phase transition temperature of FePt thin films by single shot H+ ion exposure using plasma focus device

    International Nuclear Information System (INIS)

    Pan, Z.Y.; Lin, J.J.; Zhang, T.; Karamat, S.; Tan, T.L.; Lee, P.; Springham, S.V.; Ramanujan, R.V.; Rawat, R.S.

    2009-01-01

    FePt thin films are exposed to pulsed energetic H + ion beam from plasma focus. In irradiated films, the phase transition from the low K u disordered face-centered-cubic structure to high K u ordered face-centered-tetragonal phase was achieved at 400 deg. C with the order parameter S ranging from 0.73 to 0.83, high coercivity of about 5356 kA/m, high negative nucleation field of about 7700 kA/m and high squareness ratio ranging from 0.73 to 0.79. The advantage of using plasma focus device is that it can lower phase transition temperature and significantly enhance the magnetic properties by a pulsed single shot exposure

  4. Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns.

    Science.gov (United States)

    Wang, Bin; Huang, Ming; Tao, Li; Lee, Sun Hwa; Jang, A-Rang; Li, Bao-Wen; Shin, Hyeon Suk; Akinwande, Deji; Ruoff, Rodney S

    2016-01-26

    We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.

  5. Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

    Science.gov (United States)

    Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

    2015-01-01

    Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

  6. Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films

    Science.gov (United States)

    Rosário, Carlos M. M.; Thöner, Bo; Schönhals, Alexander; Menzel, Stephan; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.

    2018-05-01

    Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content in a local region of these conductive filaments. However, a deep understanding of the filaments' composition and structure is still a matter of debate. We approached the problem by comparing the electronic transport, at temperatures from 300 K down to 2 K, in the filaments and in TaOx films exhibiting a substoichiometric oxygen content. The filaments were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar ReRAM structures. In the TaOx thin films with various oxygen contents, the in-plane transport was studied. There is a close similarity between the electrical properties of the conductive filaments in the ReRAM devices and of the TaOx films with x ˜ 1, evidencing also no dimensionality difference for the electrical transport. More specifically, for both systems there are two different conduction processes: one in the higher temperature range (from 50 K up to ˜300 K), where the conductivity follows a √{ T } dependence, and one at lower temperatures (<50 K), where the conductivity follows the exp(-1 / √{ T } ) dependence. This suggests a strong similarity between the material composition and structure of the filaments and those of the substoichiometric TaOx films. We also discuss the temperature dependence of the conductivity in the framework of possible transport mechanisms, mainly of those normally observed for granular metals.

  7. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  8. Self-assembled monolayers and chemical derivatization of Ba0.5Sr0.5TiO3 thin films: Applications in phase shifter devices

    International Nuclear Information System (INIS)

    Morales-Cruz, Angel L.; Van Keuls, Fred W.; Miranda, Felix A.; Cabrera, Carlos R.

    2005-01-01

    Thin films of barium strontium titanate (Ba 1-x Sr x TiO 3 (BSTO)) have been used in coupled microstrip phase shifters (CMPS) for possible insertion in satellite and wireless communication platforms primarily because of their high dielectric constant, low loss, large tunability, and good structural stability. In an attempt to improve the figure of merit K (phase shift deg /dB of loss) of phase shifters, modification of the metal/BSTO interface of these devices has been done through surface modification of the BSTO layer using a self-assembled monolayer approach. The impact of this nanotechnology promises to reduce RF losses by improving the quality of the metal/BSTO interface. In this study, compounds such as 3-mercaptopropyltrimethoxysilane (MPS), 16-mercaptohexadecanois acid (MHDA) and 3-mercaptopropionic acid (MPA) were used to form the self-assembled monolayers on the BSTO surface. As a result of the previous modification, chemical derivatization of the self-assembled monolayers was done in order to increase the chain length. Chemical derivatization was done using 3-aminopropyltrimethoxysilane (APS) and 16-mercaptohexadecanoic acid. Surface chemical analysis was done to reveal the composition of the derivatization via X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared (FT-IR). Low and high frequencies measurements of phase shifters were done in order measure the performance of these devices for insertion in antennas. X-ray photoelectron spectroscopy characterization of modified BSTO thin films with MPS showed a binding energy peak at 162.9 eV, indicative of a possible S-O interaction: sulfur of the mercapto compound, MPS, used to modify the surface with the oxygen site of the BSTO thin film. This interaction is at higher binding energies compared with the thiolate interaction. This behavior is observed with the other mercapto compounds such as: MHDA and MPA. An FT-IR analysis present a band at 780 cm -1 , which is characteristic of an O

  9. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    Science.gov (United States)

    Hankins, Matthew G [Albuquerque, NM

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  10. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  11. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  12. Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices; Herstellung und Untersuchung von epitaktischen HTSL/Isolator-Schichten auf Saphirsubstraten zur Anwendung in HF-Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Kittel, H.

    1995-10-01

    The use of high temperature superconductors (HTSC) like YBCO with distinct lower surface resistance compared to normal conductors allows miniaturisation of high frequency (HF) circuits. The object of this work was the fabrication of YBCO thin films on low loss sapphire substrates applicable for stripline devices. To induce epitaxial growth and to avoid chemical reaction at the film-substrate boundary buffer layers were investigated. The examination of the growth properties and especially of the surface impedance has been allotted particular importance. In contrast to CaTiO{sub 3} it was possible to deposit CeO{sub 2}-buffer layers in direct growth up to a thickness of about 30 nm without cracks. The films show all growth properties required and even Laue-oscillations being a feature of high quality growth enabling the determination of film thickness distribution without destruction. The YBCO growth-, transport- and HF-properties meet the ones of YBCO films on standard substrates. A remarkable result is that the mosaic distribution of the CEO film, itself strongly dependend on film thickness, does not influence that of the YBCO film considerably. Rather it changes its shape subsequently due to YBCO deposition. A further particularity in contrast to deposition on standard substrates is the need to adjust the substrate heater tempeature for deposition of YBCO films with thicknesses {>=}300 nm needed for HF application. To demonstrate their usefullness some stripline devices like planar coils and side coupled filters have been fabricated and characterised. (orig.)

  13. White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots

    Science.gov (United States)

    Kim, Jong-Hoon; Yang, Heesun

    2014-06-01

    Two types of non-Cd quantum dots (QDs)—In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones—are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

  14. White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots

    International Nuclear Information System (INIS)

    Kim, Jong-Hoon; Yang, Heesun

    2014-01-01

    Two types of non-Cd quantum dots (QDs)—In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu−In−Ga−S (CIGS) alloy ones, and red-emitting InP ones—are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI 1−x G x S/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI 0.2 G 0.8 S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI 0.2 G 0.8 S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution. (papers)

  15. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, D.W., E-mail: DWM172@bham.ac.uk [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom); Waddingham, R.; Flewitt, A.J. [University of Cambridge, Electrical Engineering Division, Department of Engineering, J J Thomson Avenue, Cambridge CB3 0FA,United Kingdom (United Kingdom); Sierros, K.A. [West Virginia University, Mechanical & Aerospace Engineering, Morgantown, WV 26506 (United States); Bowen, J. [Open University, Department of Engineering and Innovation, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Kukureka, S.N. [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom)

    2015-11-02

    Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates.

  16. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

    International Nuclear Information System (INIS)

    Mohammed, D.W.; Waddingham, R.; Flewitt, A.J.; Sierros, K.A.; Bowen, J.; Kukureka, S.N.

    2015-01-01

    Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates

  17. Enhanced performance of CdS/CdTe thin-film devices through temperature profiling techniques applied to close-spaced sublimation deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiaonan Li; Sheldon, P.; Moutinho, H.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe a methodology developed and applied to the close-spaced sublimation technique for thin-film CdTe deposition. The developed temperature profiles consisted of three discrete temperature segments, which the authors called the nucleation, plugging, and annealing temperatures. They have demonstrated that these temperature profiles can be used to grow large-grain material, plug pinholes, and improve CdS/CdTe photovoltaic device performance by about 15%. The improved material and device properties have been obtained while maintaining deposition temperatures compatible with commercially available substrates. This temperature profiling technique can be easily applied to a manufacturing environment by adjusting the temperature as a function of substrate position instead of time.

  18. Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

    International Nuclear Information System (INIS)

    Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Matsubara, M.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

    2004-01-01

    The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga 2 O 3 content ZnO target

  19. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  20. Investigation of thin films, heterostructures and devices of ceramic superconductors by means of high-resolution electron microscopy

    International Nuclear Information System (INIS)

    Jia Chunlin.

    1993-08-01

    In this thesis a systematic study of the microstructure of YBa 2 Cu 3 O 7 thin films is presented by means of high-resolution electron microscopy (HREM). Most of the efforts are focused on the characterization of heterostructures of superconducting YBa 2 Cu 3 O 7 and non-superconducting PrBa 2 Cu 3 O 7 and on YBa 2 Cu 3 O 7 films deposited on step-edge substrates. These specially designed structures exhibit a great potential for the electronic application of high-Tc superconductors and for the investigation of the basic electric properties of the YBa 2 Cu 3 O 7 superconductor. (orig.) [de

  1. Use of lead aprons - further considerations of estimation of doses and conditions of acute exposures of TLD badge in diagnostic x-ray institutions

    International Nuclear Information System (INIS)

    Pradhan, A.S.; Chatterjee, S.

    2003-01-01

    In the recent study the authors reported that the exposure conditions of the use of the TLD badge, whether worn under or over the lead apron could be estimated from the readout of the TLD badge used in X-ray diagnostic departments. The effectiveness of lead aprons procured from different suppliers having the same value of quoted nominal lead equivalence was found to vary severely and this indicated some limitation in the applicability of the method of evaluation of exposure conditions of the badge. The transmission factors for the lead aprons varied up to a factor of 15 for the same value of quoted nominal lead equivalence procured from three different suppliers. This is of serious consequences in radiation protection and attracts attention for quality control. An error in the estimation of the exposure conditions of the TLD badge could lead to an underestimation of doses up to 4 times using the prevalent method. The estimation of the actual doses of radiation workers in the cases of over-exposures for the situations of the use of the TLD badge over the lead apron showed that the variation in the quality of lead aprons could be wrong in the range from 1.6 to 25 times even if the kVp of the machine is exactly known. Therefore, attempt should not be made to estimate the actual doses under lead apron from the readout of the TLD badge worn over the apron, as the real values of the transmission factors of the aprons and kVp of the X-ray machine may not be available. (author)

  2. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    International Nuclear Information System (INIS)

    Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

    2008-01-01

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

  3. Flexible, Transparent, Thickness-Controllable SWCNT/PEDOT:PSS Hybrid Films Based on Coffee-Ring Lithography for Functional Noncontact Sensing Device

    KAUST Repository

    Tai, Yanlong

    2015-12-08

    Flexible transparent conductive films (FTCFs) as the essential components of the next generation of functional circuits and devices are presently attracting more attention. Here, a new strategy has been demonstrated to fabricate thickness-controllable FTCFs through coffee ring lithography (CRL) of single-wall carbon nanotube (SWCNT)/poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate (PEDOT:PSS) hybrid ink. The influence of ink concentration and volume on the thickness and size of hybrid film has been investigated systematically. Results show that the final FTCFs present a high performance, including a homogeneous thickness of 60-65 nm, a sheet resistance of 1.8 kohm/sq, a visible/infrared-range transmittance (79%, PET = 90%), and a dynamic mechanical property (>1000 cycle, much better than ITO film), respectively, when SWCNT concentration is 0.2 mg/mL, ink volume is 0.4 μL, drying at room temperature. Moreover, the benefits of these kinds of FTCFs have been verified through a full transparent, flexible noncontact sensing panel (3 × 4 sensing pixels) and a flexible battery-free wireless sensor based on a humidity sensing mechanism, showing excellent human/machine interaction with high sensitivity, good stability, and fast response/recovery ability. © 2015 American Chemical Society.

  4. Flexible, Transparent, Thickness-Controllable SWCNT/PEDOT:PSS Hybrid Films Based on Coffee-Ring Lithography for Functional Noncontact Sensing Device

    KAUST Repository

    Tai, Yanlong; Yang, Zhen Guo

    2015-01-01

    Flexible transparent conductive films (FTCFs) as the essential components of the next generation of functional circuits and devices are presently attracting more attention. Here, a new strategy has been demonstrated to fabricate thickness-controllable FTCFs through coffee ring lithography (CRL) of single-wall carbon nanotube (SWCNT)/poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate (PEDOT:PSS) hybrid ink. The influence of ink concentration and volume on the thickness and size of hybrid film has been investigated systematically. Results show that the final FTCFs present a high performance, including a homogeneous thickness of 60-65 nm, a sheet resistance of 1.8 kohm/sq, a visible/infrared-range transmittance (79%, PET = 90%), and a dynamic mechanical property (>1000 cycle, much better than ITO film), respectively, when SWCNT concentration is 0.2 mg/mL, ink volume is 0.4 μL, drying at room temperature. Moreover, the benefits of these kinds of FTCFs have been verified through a full transparent, flexible noncontact sensing panel (3 × 4 sensing pixels) and a flexible battery-free wireless sensor based on a humidity sensing mechanism, showing excellent human/machine interaction with high sensitivity, good stability, and fast response/recovery ability. © 2015 American Chemical Society.

  5. Optical and electrical characterizations of a single step ion beam milling mesa devices of chloride passivated PbS colloidal quantum dots based film

    Energy Technology Data Exchange (ETDEWEB)

    Hechster, Elad, E-mail: elad.hechster@gmail.com; Sarusi, Gabby [Electro-Optics Engineering Unit and Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva, 84100 Israel (Israel); Shapiro, Arthur; Lifshitz, Efrat [Schulich Faculty of Chemistry, Solid State Institute, Russel Berrie Nanotechnology Institute, Technion – Israel Institute of technology, 32000 Haifa (Israel)

    2016-07-15

    Colloidal Quantum Dots (CQDs) are of increasing interest, thanks to their quantum size effect that gives rise to their usage in various applications, such as biological tagging, solar cells and as the sensitizing layer of night vision devices. Here, we analyze the optical absorbance of chloride passivated PbS CQDs as well as revealing a correlation between their photoluminescence and sizes distribution, using theoretical models and experimental results from the literature. Next, we calculate the CQDs resistivity as a film. Although resistivity can be calculated from sheet resistance measurement using four point probes, such measurement is usually carried-out on the layer’s surface that in most cases has dangling bonds and surface states, which might affect the charges flow and modify the resistivity. Therefore; our approach, which was applied in this work, is to extract the actual resistivity from measurements that are performed along the film’s thickness (z-direction). For this intent, we fabricated gold capped PbS mesas devices using a single step Ion Beam Milling (IBM) process where we milled the gold and the PbS film continually, and then measured the vertical resistance. Knowing the mesas’ dimensions, we calculate the resistivity. To the best of our knowledge, no previous work has extracted, vertically, the resistivity of chloride passivated PbS CQDs using the above method.

  6. Optical and electrical characterizations of a single step ion beam milling mesa devices of chloride passivated PbS colloidal quantum dots based film

    International Nuclear Information System (INIS)

    Hechster, Elad; Sarusi, Gabby; Shapiro, Arthur; Lifshitz, Efrat

    2016-01-01

    Colloidal Quantum Dots (CQDs) are of increasing interest, thanks to their quantum size effect that gives rise to their usage in various applications, such as biological tagging, solar cells and as the sensitizing layer of night vision devices. Here, we analyze the optical absorbance of chloride passivated PbS CQDs as well as revealing a correlation between their photoluminescence and sizes distribution, using theoretical models and experimental results from the literature. Next, we calculate the CQDs resistivity as a film. Although resistivity can be calculated from sheet resistance measurement using four point probes, such measurement is usually carried-out on the layer’s surface that in most cases has dangling bonds and surface states, which might affect the charges flow and modify the resistivity. Therefore; our approach, which was applied in this work, is to extract the actual resistivity from measurements that are performed along the film’s thickness (z-direction). For this intent, we fabricated gold capped PbS mesas devices using a single step Ion Beam Milling (IBM) process where we milled the gold and the PbS film continually, and then measured the vertical resistance. Knowing the mesas’ dimensions, we calculate the resistivity. To the best of our knowledge, no previous work has extracted, vertically, the resistivity of chloride passivated PbS CQDs using the above method.

  7. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.

    Science.gov (United States)

    Yoon, Sung-Min; Seong, Nak-Jin; Choi, Kyujeong; Seo, Gi-Ho; Shin, Woong-Chul

    2017-07-12

    We demonstrated the physical and electrical properties of the In-Ga-Zn-O (IGZO) thin films prepared by atomic-layer deposition (ALD) method and investigated the effects of the ALD temperature. The film composition (atomic ratio of In:Ga:Zn) and film density were examined to be 1:1:3 and 5.9 g/cm 3 , respectively, for all the temperature conditions. The optical band gaps decreased from 3.81 to 3.21 eV when the ALD temperature increased from 130 to 170 °C. The amounts of oxygen-related defects such as oxygen vacancies increased with increasing the ALD temperature. It was found from the in situ temperature-dependent electrical conductivity measurements that the electronic natures including the defect structures and conduction mechanism of the IGZO thin films prepared at different temperatures showed marked variations. The carrier mobilities in the saturation regions (μ sat 's) for the fabricated thin film transistors (TFTs) using the IGZO channel layers were estimated to be 6.1 to 14.8 cm 2 V -1 s -1 with increasing the ALD temperature from 130 to 170 °C. Among the devices, when the ALD temperature was controlled to be 150 °C, the IGZO TFTs showed the best performance, which resulted from the fact that the amounts of oxygen vacancies and interstitial defects could be appropriately modulated at this condition. Consequently, the μ sat , subthreshold swing, and on/off ratio for the TFT using the IGZO channel prepared at 150 °C showed 10.4 cm 2 V -1 s -1 , 90 mV/dec, and 2 × 10 9 , respectively. The threshold voltage shifts of this device could also be effectively reduced to be 0.6 and -3.2 V under the positive-bias and negative-bias-illumination stress conditions. These obtained characteristics can be comparable to those for the sputter-deposited IGZO TFTs.

  8. Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

    International Nuclear Information System (INIS)

    Rourke, Devin; Ahn, Sungmo; Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos; Park, Wounjhang

    2014-01-01

    The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

  9. Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

    Energy Technology Data Exchange (ETDEWEB)

    Rourke, Devin [Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States); Ahn, Sungmo [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Park, Wounjhang, E-mail: won.park@colorado.edu [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80303 (United States)

    2014-09-21

    The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

  10. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wang, Zhenwei; Hedhili, Mohamed N.; Wang, Q. X.; Alshareef, Husam N.

    2014-01-01

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling

  11. Application of High-Temperature Superconducting Thin-Film Devices to Electro-Optical and Electronic Warfare Systems

    Science.gov (United States)

    1990-02-01

    superconducting dispersive (chirp) delay line. Bt currents (IB 1 and 1B 2) control states of write junctions (gates 1 and 2). (Counter) clockwise currents...Gavaler, and "S. A. Reihle, "Superconductive Convolver with June- A. I. Braginski, "Optical Response of Epitaxial Films tion Ring Nlixers," IELT Trans

  12. Flexible thin-film NFC tags powered by commercial USB reader device at 13.56MHz

    NARCIS (Netherlands)

    Myny, K.; Cobb, B.; Van Der Steen, J.L.; Tripathi, A.K.; Genoe, J.; Gelinck, G.H.; Heremans, P.

    2015-01-01

    Our goal is to create thin low-cost flexible NFC tags to allow everyday objects to communicate to smartphones and computers and thus participate in the Internet of Things. We employ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor circuits processed at low temperatures, less than

  13. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  14. Handheld and automated ultrasonic spray deposition of conductive PEDOT:PSS films and their application in AC EL devices

    NARCIS (Netherlands)

    Ely, Fernando; Matsumoto, Agatha; Zoetebier, Bram; Peressinotto, Valdirene S.; Hirata, Marcelo Kioshi; de Sousa, Douglas A.; Maciel, Rubens

    2014-01-01

    In this contribution we explore the spray deposition technique to achieve smooth films based on the conductive polymer PEDOT:PSS. Two different spray systems were used and compared namely: (a) handheld airbrush and (b) automated ultrasonic spray system. For each system a number of parameters were

  15. Applications of Poly(indole-6-carboxylic acid-co-2,2′-bithiophene Films in High-Contrast Electrochromic Devices

    Directory of Open Access Journals (Sweden)

    Chung-Wen Kuo

    2018-03-01

    Full Text Available Two homopolymers (poly(indole-6-carboxylic acid (PInc and poly(2,2′-bithiophene (PbT and a copolymer (poly(indole-6-carboxylic acid-co-2,2′-bithiophene (P(Inc-co-bT are electrodeposited on ITO electrode surfaces via electrochemical method. Electrochemical and electrochromic properties of PInc, PbT, and P(Inc-co-bT films were characterized using cyclic voltammetry and in situ UV-Vis spectroscopy. The anodic P(Inc-co-bT film prepared using Inc./bT = 1/1 feed molar ratio shows high optical contrast (30% at 890 nm and coloring efficiency (112 cm2 C−1 at 890 nm. P(Inc-co-bT film revealed light yellow, yellowish green, and bluish grey in the neutral, intermediate, and oxidation states, respectively. Electrochromic devices (ECDs were constructed using PInc, PbT, or P(Inc-co-bT film as anodic layer and PEDOT-PSS as cathodic layer. P(Inc-co-bT/PMMA-PC-ACN-LiClO4/PEDOT-PSS ECD showed high ∆T (31% at 650 nm, and PInc/PMMA-PC-ACN-LiClO4/PEDOT-PSS ECD displayed high coloration efficiency (416.7 cm2 C−1 at 650 nm. The optical memory investigations of PInc/PMMA-PC-ACN-LiClO4/PEDOT-PSS, PbT/PMMA-PC-ACN-LiClO4/PEDOT-PSS, and P(Inc-co-bT/PMMA-PC-ACN-LiClO4/PEDOT-PSS ECDs exhibited that ECDs had adequate optical memory in bleaching and coloring states.

  16. Calibration of TLD badge to photons of energies above 6 MeV encountered in nuclear reactors

    International Nuclear Information System (INIS)

    Pradhan, A.S.; Bakshi, A.K.

    1999-01-01

    Response of CaSO 4 :Dy Teflon discs based TLD badge has been evaluated for radiation fields having photons of energy above 6 MeV, often encountered in nuclear power plants. Gamma ray response of the TLD disc under metal filter in the badge (used for evaluation of gamma ray doses) was found to increase by about 10% to photons above 6 MeV as compared to the response for reference calibration to 60 Co gamma rays. Response of discs under the open window and the plastic filter was found to be only 40-60% of that under metal filter. Thus, while measurement of whole body dose is not affected seriously, the estimation of beta dose in the mixed fields of high energy gamma rays and beta rays could be in serious error. In the above fields for situations having beta doses of about 1.65 times the gamma ray doses, the present use of dose evaluation will record beta dose as zero, a serious under estimation of beta ray doses. Study also provides an explanation to an anomalous situation where reading under window or plastic filter is much less than that under metal filter. These aspects of personal dosimetry need attention. (author)

  17. Synchrotron White Beam X-Ray Topography Characterization of LGX and SXGS Bulk Single Crystals, Thin Films and Piezoelectric Devices

    National Research Council Canada - National Science Library

    Dudley, Michael

    2007-01-01

    ...), to the determination of defect and general distortion distributions in novel LGX piezoelectric crystals with a view to enabling improvement in crystal quality and consequently in piezoelectric device performance...

  18. High-frequency Lamb wave device composed of MEMS structure using LiNbO3 thin film and air gap.

    Science.gov (United States)

    Kadota, Michio; Ogami, Takashi; Yamamoto, Kansho; Tochishita, Hikari; Negoro, Yasuhiro

    2010-11-01

    High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb wave, a very thin (less than 0.5 μm thick) single-crystal plate must be used. It is difficult to fabricate such a very thin single crystal plate. The authors have attempted to use a c-axis orientated epitaxial LiNbO(3) thin film deposited by a chemical vapor deposition system (CVD) instead of using a thin LiNbO(3) single crystal plate. Lamb wave resonators composed of a interdigital transducer (IDT)/the LiNbO(3) film/air gap/base substrate structure like micro-electromechanical system (MEMS) transducers were fabricated. These resonators have shown a high frequency of 4.5 and 6.3 GHz, which correspond to very high acoustic velocities of 14,000 and 12,500 m/s, respectively, have excellent characteristics such as a ratio of resonant and antiresonant impedance of 52 and 38 dB and a wide band of 7.2% and 3.7%, respectively, and do not have spurious responses caused by the 0th modes of shear horizontal (SH(0)) and symmetric (S(0)) modes.

  19. Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plastics.

    Science.gov (United States)

    Yeo, Minje; Yun, Junggwon; Kim, Sangsig

    2013-09-01

    A pn heterojunction device based on p-type silicon (Si) nanowires (NWs) prepared by top-down method and n-type mercury selenide (HgSe) nanoparticles (NPs) synthesized by the colloidal method have been fabricated on a flexible plastic substrate. The synthesized HgSe NPs were analyzed through the effective mass approximation. The characteristics of the heterojunction device were examined and studied with the energy band diagram. The device showed typical diode characteristics with a turn-on voltage of 1.5 V and exhibited a high rectification ratio of 10(3) under relatively low forward bias. Under illumination of 633-nm-wavelength light, the device presented photocurrent efficiency of 117.5 and 20.1 nA/W under forward bias and reverse bias conditions, respectively. Moreover, the photocurrent characteristics of the device have been determined by bending of the plastic substrate upward and downward with strain of 0.8%. Even though the photocurrent efficiency has fluctuations during the bending cycles, the values are roughly maintained for 10(4) bending cycles. This result indicates that the fabricated heterojunction device has the potential to be applied as fundamental elements of flexible nanoelectronics.

  20. The influence of film-screen color sensitivity and type of measurement device on kVp measurements.

    Science.gov (United States)

    Lam, R W; Price, S C

    1989-01-01

    Three methods for evaluating radiographic kVp were studied: the Wisconsin Test Cassette, the Noninvasive Evaluator of Radiation Outputs (NERO), and the Dynalyzer. The Dynalyzer kVp readings were the highest and were followed by NERO and cassette readings in descending order. By film type, the cassette readings ranged from Kodak OG (green sensitive), TMG (green sensitive), XK (blue sensitive), and XRP (blue sensitive) in descending order. The results show that there is significant variation between the methods.

  1. Historical Evaluation of Film Badge Dosimetry Y-12 Plant: Part 2 - Neutron Radiation ORAUT-OTIB-0045

    International Nuclear Information System (INIS)

    Kerr, G.D.; Frome, E.L.; Watkins, J.P.; Tankersley, W.G.

    2009-01-01

    A summary of the major neutron sources involved in radiation exposures to Y-12 workers is presented in this TIB. Graphical methods are used to evaluate available neutron dose data from quarterly exposures to Y-12 workers and to determine how the data could be used to derive neutron-to-gamma dose ratios for dose reconstruction purposes. This TIB provides estimates of neutron-to-gamma dose ratios for specific departments and a default value for the neutron-to-gamma dose ratio based on the pooled neutron dose data for all Y-12 departments.

  2. Historical Evaluation of Film Badge Dosimetry Y-12 Plant: Part 2–Neutron Radiation ORAUT-OTIB-0045

    Energy Technology Data Exchange (ETDEWEB)

    Kerr GD, Frome EL, Watkins JP, Tankersley WG

    2009-12-14

    A summary of the major neutron sources involved in radiation exposures to Y-12 workers is presented in this TIB. Graphical methods are used to evaluate available neutron dose data from quarterly exposures to Y-12 workers and to determine how the data could be used to derive neutron-to-gamma dose ratios for dose reconstruction purposes. This TIB provides estimates of neutron-to-gamma dose ratios for specific departments and a default value for the neutron-to-gamma dose ratio based on the pooled neutron dose data for all Y-12 departments.

  3. New Copolymers Containing Charge Carriers for Organic Devices with ITO Films Treated by UV-Ozone Using High Intensity Discharge Lamp

    Directory of Open Access Journals (Sweden)

    Emerson Roberto SANTOS

    2009-02-01

    Full Text Available For electroluminescent devices new copolymers were synthesized using a Suzuki cross-coupling reaction based on monomers (fluorine-alt-phenylene in conjugation with quinoline-alt-phenylene units. They were characterized by 1H NMR, 13C NMR and FTIR. TGA measurements indicated that the copolymers have good thermal properties and no weight loss was observed up to 250 °C. The UV-Vis spectra were characterized by absorptions from the fluorene-alt-phenylene and quinoline-alt-phenylene segments in the backbone, while their photoluminescence (PL spectra dominated by emissions from the fluorene excimer. For devices assembly ITO films were treated using a High Intensity Discharge Lamp (HPMVL without outer bulb presenting high ozone concentration than that conventional germicidal lamp. The device with ITO treated revealed significant decrease of threshold voltage (or turn-on voltage compared by untreated with I-V curves. This decrease can be related by water and carbon dioxide extracted on surface after UV-Ozone treatment revealed by DRIFT measurements.

  4. A comparative study of the refractive index of silk protein thin films towards biomaterial based optical devices

    Science.gov (United States)

    Bucciarelli, A.; Mulloni, V.; Maniglio, D.; Pal, R. K.; Yadavalli, V. K.; Motta, A.; Quaranta, A.

    2018-04-01

    Over the last two decades, silk fibroin has been exploited as a versatile optical material in biological applications due to a combination of unique properties. Recently, protocols have been developed to produce a silk fibroin negative tone resist that is UV crosslinkable, thereby allowing micro and nanoscale patterning of the protein using traditional photolithographic tools. The same protocol has been applied to the silk protein sericin to develop a sericin resist. Despite the immense potential of these biomaterials to develop micro optical patterns on silicon and glass surfaces, as well as self-standing components, their refractive indexes are not well characterized. In this work, optimizing a method to obtain extremely smooth, thin films, the refractive index (RI) of fibroin and sericin proteins and resists were characterized using ellipsometry. The parameters of the Sellmeier and Cauchy dispersion laws have been determined to obtain the RI over a large wavelength range. A complete morphological study of the films has been conducted. In addition, the effect of solvent on the optical properties of silk fibroin and sericin thin films are reported, with differences in values explained by examining the change in the protein secondary structure.

  5. Enhanced physicochemical properties of polydimethylsiloxane based microfluidic devices and thin films by incorporating synthetic micro-diamond.

    Science.gov (United States)

    Waheed, Sidra; Cabot, Joan M; Macdonald, Niall P; Kalsoom, Umme; Farajikhah, Syamak; Innis, Peter C; Nesterenko, Pavel N; Lewis, Trevor W; Breadmore, Michael C; Paull, Brett

    2017-11-08

    Synthetic micro-diamond-polydimethylsiloxane (PDMS) composite microfluidic chips and thin films were produced using indirect 3D printing and spin coating fabrication techniques. Microfluidic chips containing up to 60 wt% micro-diamond were successfully cast and bonded. Physicochemical properties, including the dispersion pattern, hydrophobicity, chemical structure, elasticity and thermal characteristics of both chip and films were investigated. Scanning electron microscopy indicated that the micro-diamond particles were embedded and interconnected within the bulk material of the cast microfluidic chip, whereas in the case of thin films their increased presence at the polymer surface resulted in a reduced hydrophobicity of the composite. The elastic modulus increased from 1.28 for a PDMS control, to 4.42 MPa for the 60 wt% composite, along with a three-fold increase in thermal conductivity, from 0.15 to 0.45 W m -1 K -1 . Within the fluidic chips, micro-diamond incorporation enhanced heat dissipation by efficient transfer of heat from within the channels to the surrounding substrate. At a flow rate of 1000 μL/min, the gradient achieved for the 60 wt% composite chip equalled a 9.8 °C drop across a 3 cm long channel, more than twice that observed with the PDMS control chip.

  6. Comparing Digital Badges-and-Points with Classroom Token Systems: Effects on Elementary School ESL Students' Classroom Behavior and English Learning

    Science.gov (United States)

    Homer, Ryan; Hew, Khe Foon; Tan, Cheng Yong

    2018-01-01

    This paper reports the findings of a field experiment that gamified the classroom experience of elementary school ESL students by implementing digital badges-and-points which students could earn by achieving specific behavioral and learning goals. Altogether, 120 children in eight different classes participated in this study. Four of the classes…

  7. All-thin-film PZT/FeGa Multiferroic Cantilevers and Their Applications in Switching Devices and Parametric Amplification

    Science.gov (United States)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Chris; Lofland, Samuel; Takeuchi, Ichiro

    2014-03-01

    We are investigating the characteristics of microfabricated PZT/FeGa multiferroic cantilevers. The cantilevers can be driven by AC or DC magnetic and electric field, and the device response can be read off as a piezo-induced voltage. We can use the multiple input parameters to operate the devices in a variety of manners for different applications. They include electromagnetic energy harvesting, pulse triggered nonlinear memory devices, and parametrically amplified ME sensors. Due to the competition of anisotropy and Zeeman energies, the mechanical resonant frequency of the cantilevers was found to follow a hysteresis behavior with DC bias magnetic field applied in the cantilever easy axis. We can also control and tune the occurrence of nonlinear bifurcation in the frequency spectrum. The resulting hysteresis in the frequency spectrum can be used to make switching devices, where the input can be DC electric and magnetic fields, as well as pulses of AC fields. We have also demonstrated parametric pumping of the response from an AC magnetic field using frequency-doubled AC electric field. The enhanced equivalent ME coefficient is as high as 10 million V/(cm*Oe), when the pumping voltage is very close to a threshold voltage. The quality factor also increases from 2000 to 80000 with pumping.

  8. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  9. Discharge amplified photo-emission from ultra-thin films applied to tuning work function of transparent electrodes in organic opto-electronic devices

    International Nuclear Information System (INIS)

    Gentle, A.R.; Smith, G.B.; Watkins, S.E.

    2013-01-01

    A novel photoemission technique utilising localised discharge amplification of photo-yield is reported. It enables fast, accurate measurement of work function and ionisation potential for ultra-thin buffer layers vacuum deposited onto single and multilayer transparent conducting electrodes for organic solar cells and OLED's. Work function in most traditional transparent electrodes has to be raised to maximise charge transfer while high transmittance and high conductance must be retained. Results are presented for a range of metal oxide buffers, which achieve this goal. This compact photo-yield spectroscopy tool with its fast turn-around has been a valuable development aid since ionisation potential can vary significantly as deposition conditions change slightly, and as ultra-thin films grow. It has also been useful in tracking the impact of different post deposition cleaning treatments along with some storage and transport protocols, which can adversely reduce ionisation potential and hence subsequent device performance.

  10. Effects of Interfaces on Dynamics in Micro-Fluidic Devices: Slip-Boundaries’ Impact on Rotation Characteristics of Polar Liquid Film Motors

    Science.gov (United States)

    Jiang, Su-Rong; Liu, Zhong-Qiang; Amos Yinnon, Tamar; Kong, Xiang-Mu

    2017-05-01

    A new approach for exploring effects of interfaces on polar liquids is presented. Their impact on the polar liquid film motor (PLFM) - a novel micro-fluidic device - is studied. We account for the interface’s impact by modeling slip boundary effects on the PLFM’s electro-hydro-dynamical rotations. Our analytical results show as k={l}s/R increases (with {l}s denoting the slip length resulting from the interface’s impact on the film’s properties, k > -1 and R denoting the film’s radius): (a) PLFMs subsequently exhibit rotation characteristics under “negative-”, “no-”, “partial-” and “perfect-” slip boundary conditions; (b) The maximum value of the linear velocity of the steady rotating film increases linearly and its location approaches the film’s border; (c) The decay of the angular velocities’ dependency on the distance from the center of the film slows down, resulting in a macroscopic flow near the boundary. With our calculated rotation speed distributions consistent with the existing experimental ones, research aiming at fitting computed to measured distributions promises identifying the factors affecting {l}s, e.g., solid-fluid potential interactions and surface roughness. The consistency also is advantageous for optimizing PLFM’s applications as micro-washers, centrifuges, mixers in the lab-on-a-chip. Supported by National Natural Science Foundation of China under Grant Nos. 11302118, 11275112, and Natural Science Foundation of Shandong Province under Grant No. ZR2013AQ015

  11. Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

    International Nuclear Information System (INIS)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-01-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  12. Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-07-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  13. Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9 films

    Directory of Open Access Journals (Sweden)

    J. H. Park

    2015-08-01

    Full Text Available In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9 as a phase change material for reliable PCM (Phase Change Memory with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9 film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0 films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0 film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0 were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9 is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

  14. Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

    Science.gov (United States)

    Park, J. H.; Kim, S.-W.; Kim, J. H.; Ko, D.-H.; Wu, Z.; Cho, S. L.; Ahn, D.; Ahn, D. H.; Lee, J. M.; Nam, S. W.

    2015-08-01

    In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

  15. Cesium-incorporated indium-tin-oxide films for use as a cathode with low work function for a transparent organic light-emitting device

    International Nuclear Information System (INIS)

    Uchida, Takayuki; Mimura, Toshifumi; Ohtsuka, Masao; Otomo, Toshio; Ide, Mieko; Shida, Azusa; Sawada, Yutaka

    2006-01-01

    Transparent organic light-emitting devices (TOLEDs) were successfully fabricated utilizing a novel transparent conducting cathode with low work function. Cesium-incorporated indium-tin-oxide film was deposited on the organic layers with negligible damage by simultaneous operation of RF magnetron sputtering using an ITO target and vacuum evaporation of metallic cesium. Incorporation of cesium in the ITO film was confirmed by XPS analysis. The work function (4.3 eV) determined by photoelectron spectroscopy in air (PESA) was lower than that of 0.3-0.4-eV without cesium-incorporation and stable under the atmospheric environment. The electron injection efficiency of cesium-incorporated ITO cathode in the present transparent OLED fabricated was comparable to that of the previous double-layered structure comprising of ITO cathode and an organic buffer layer (BCP) doped by evaporation of cesium [T. Uchida, S. Kaneta, M. Ichihara, M. Ohtsuka, T. Otomo, D.R. Marx, Jpn. J. Appl. Phys., 44, No. 9 (2005) L282

  16. Polycrystalline silicon film solar cells on insulator devices. Final report; Duennschichtsolarzellen aus kristallinem Silicium auf Glassubstraten. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Werner, J.H.; Wagner, T.A.; Bruehne, K.; Berge, C.; Dassow, R.; Jensen, N.; Koehler, J.; Nerding, M.; Oberbeck, L.; Rinke, T.J.; Bergmann, R.B.; Schubert, M.B.

    2002-07-01

    The goal of presenting a highly efficient thin film silicon solar cell was achieved by manufacturing a 4 cm{sup 2}, 45 {mu}m thin cell with an AM1.5 efficiency of 16.6% (confirmed by FhG-ISE, Freiburg, Germany). This result reflects the potential of a novel transfer technique for single-crystalline silicon thin films which uses an electrochemically etched separation layer. Since the year 2000, this method was investigated in this project, and it proved to be very promising for manufacturing high efficiency thin film silicon solar cells. The transfer technique is now subject of a project in continuation in order to verify the feasibility of its industrial application. Polycrystalline silicon with grain sizes in the range of (1-100) {mu}m suffers from grain boundaries crossing the pn-junction which enhance recombination, and thereby limit the output voltage of respective solar cells to very low, and practically useless values. For the first time, a complete analysis of these limitations is given. Hence, the initial approach of epitaxially growing solar cell absorbers on a laser-crystallised seed layer proved not successful. After proper optimisation, hot-wire chemical vapour deposition (HW-CVD) yields <110>-textured nanocrystalline silicon (nc-Si) films with stable and improved electronic properties. A successful use in stacked 'micromorph' solar cells, however, seems unlikely since the deposition rate of high-quality nc-Si from HW-CVD turns out to be as low as such as plasma deposited nc-Si. As further project results, there are spin-offs for microelectronics from ion-assisted deposition (IAD), for displays from laser crystallisation, and for photovoltaics in heterojunction solar cells. (orig.) [German] Das Projektziel wurde mit der Herstellung einer 45 {mu}m duennen, monokristallinen Siliciumsolarzelle auf Glas mit einem Wandlungswirkungsgrad von 16,6% (bestaetigt bei FhG-ISE, Freiburg) erreicht. Dieses Ergebnis war moeglich durch die Anwendung einer neu

  17. Beta response of CaSO4:Dy based TLD badge and its angular dependence studies for personnel monitoring applications

    International Nuclear Information System (INIS)

    Kumar, Munish; Rakesh, R.B.; Sneha, C.; Ratna, P.; Bakshi, A.K.; Datta, D.

    2016-01-01

    In India, shallow/skin doses received by radiation workers from beta particles are measured using CaSO 4 :Dy based Teflon embedded TLD badge. The beta particles having maximum energy E max > 0.6 MeV - ≥ 3.54 MeV are monitored. The ratio of the response of discs under open and plastic regions (D Open/ D Perspex ) is used to estimate the energy of the beta source and to apply response correction factor. This is required as the disc dosimeters are thick and exhibit energy dependent response. Due to lack of comprehensive information regarding disc ratios and associated beta multiplication/response correction factors, present study was performed

  18. A Radiation Badge Survey for Family Members Living With Patients Treated With a 103Pd Permanent Breast Seed Implant

    International Nuclear Information System (INIS)

    Keller, Brian M.; Pignol, Jean-Philippe; Rakovitch, Eileen; Sankreacha, Raxa; O'Brien, Peter

    2008-01-01

    Purpose: Sixty-seven patients with early-stage breast cancer were treated in a Phase I/II clinical trial using a 103 Pd permanent breast seed implant as adjuvant radiotherapy after breast-conserving surgery. We report the dose received by family members living with these patients and compare measured doses with theoretical worst-case scenario estimates. Methods and Materials: Exposure-rate measurements were taken at 1 m from the patient by using a calibrated low-energy survey meter. Landauer (Landauer Inc., Glenwood, IL) Luxel badges, with sensitivity of 0.01 mSv, were given to family members to wear after the implantation. Badge readings for 33 spouses and 28 other family members were used to estimate effective doses, and these were compared with theory. Results: Average preimplantation planning target volume from computed tomography was 50.3 ml (range, 18.0-96.7 ml), and average preimplantation distance between the skin and the most anterior planning target volume margin was 0.57 cm. The average maximum exposure rate was measured to be 2.4 ± 1.1 mR/h, and average measured dose to a spouse was 0.99 ± 1.0 mSv. The calculated exposure rates and spousal doses using preimplantation computed tomography scan data overestimated those measured. Average measured family member dose (excluding spouses) was 0.20 ± 0.58 mSv. Conclusions: Based on measured and calculated spousal doses, a permanent breast seed implant using 103 Pd is safe for the public. However, it is recommended that extra precautions in the way of a breast patch be used when patients with an implant will be in the vicinity of toddlers or pregnant women

  19. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

    Directory of Open Access Journals (Sweden)

    Xingpeng Liu

    2017-12-01

    Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

  20. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    International Nuclear Information System (INIS)

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk

    2015-01-01

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping

  1. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Park, Jozeph [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Ahn, Byung Du [School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  2. 21 CFR 892.1840 - Radiographic film.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Radiographic film. 892.1840 Section 892.1840 Food... DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1840 Radiographic film. (a) Identification. Radiographic film is a device that consists of a thin sheet of radiotransparent material coated on one or both...

  3. Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis

    Energy Technology Data Exchange (ETDEWEB)

    Nakane, Akihiro; Tamakoshi, Masato; Fujimoto, Shohei; Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp [Department of Electrical, Electronic and Computer Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Tampo, Hitoshi; Kim, Kang Min; Kim, Shinho; Shibata, Hajime; Niki, Shigeru [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2016-08-14

    In developing photovoltaic devices with high efficiencies, quantitative determination of the carrier loss is crucial. In conventional solar-cell characterization techniques, however, photocurrent reduction originating from parasitic light absorption and carrier recombination within the light absorber cannot be assessed easily. Here, we develop a general analysis scheme in which the optical and recombination losses in submicron-textured solar cells are evaluated systematically from external quantum efficiency (EQE) spectra. In this method, the optical absorption in solar cells is first deduced by imposing the anti-reflection condition in the calculation of the absorptance spectrum, and the carrier extraction from the light absorber layer is then modeled by considering a carrier collection length from the absorber interface. Our analysis method is appropriate for a wide variety of photovoltaic devices, including kesterite solar cells [Cu{sub 2}ZnSnSe{sub 4}, Cu{sub 2}ZnSnS{sub 4}, and Cu{sub 2}ZnSn(S,Se){sub 4}], zincblende CdTe solar cells, and hybrid perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) solar cells, and provides excellent fitting to numerous EQE spectra reported earlier. Based on the results obtained from our EQE analyses, we discuss the effects of parasitic absorption and carrier recombination in different types of solar cells.

  4. Performance evaluation of vertical feed fully automated TLD badge reader using 0.8 and 0.4 mm teflon embedded CaSO4:Dy dosimeters

    International Nuclear Information System (INIS)

    Ratna, P.; More, Vinay; Kulkarni, M.S.

    2012-01-01

    The personnel monitoring of more than 80,000 radiation workers in India is at present carried out by semi-automated TLD badge Reader systems (TLDBR-7B) developed by Radiation Safety Systems Division, Bhabha Atomic Research Centre. More than 60 such reader systems are in use in all the personnel monitoring centers in the country. Radiation Safety Systems Division also developed the fully automated TLD badge reader based on a new TLD badge having built-in machine readable ID code (in the form of 16x3 hole pattern). This automated reader is designed with minimum of changes in the electronics and mechanical hardware in the semiautomatic version (TLDBR-7B) so that such semi-automatic readers can be easily upgraded to the fully automated versions by using the new TLD badge with ID code. The reader was capable of reading 50 TLD cards in 90 minutes. Based on the feedback from the users, a new model of frilly automated TLD badge Reader (model VEFFA-10) is designed which is an improved version of the previously reported fully Automated TLD badge reader. This VEFFA-10 PC based Reader incorporates vertical loading of TLD bards having machine readable ID code. In this new reader, a vertical rack, which can hold 100 such cards, is mounted from the right side of the reader system. The TLD card falls into the channel by gravity from where it is taken to the reading position by rack and pinion method. After the readout, the TLD card is dropped in a eject tray. The reader employs hot N 2 gas heating method and the gas flow is controlled by a specially designed digital gas flow meter on the front panel of the reader system. The system design is very compact and simple and card stuck up problem is totally eliminated in the reader system. The reader has a number of self-diagnostic features to ensure a high degree of reliability. This paper reports the performance evaluation of the Reader using 0.4 mm thick Teflon embedded CaSO 4 :Dy TLD cards instead of 0.8 mm cards

  5. Deposition of tellurium films by decomposition of electrochemically-generated H{sub 2}Te: application to radiative cooling devices

    Energy Technology Data Exchange (ETDEWEB)

    Engelhard, T.; Jones, E.D.; Viney, I. [Coventry Univ. (United Kingdom). Centre for Data Storage Mater.; Mastai, Y.; Hodes, G. [Department of Materials and Interfaces, Weizmann Institute of Science, 76100, Rehovot (Israel)

    2000-07-17

    The preparation of homogenous, large area thin layers of tellurium on thin polyethylene foils is described. The tellurium was formed by room temperature decomposition of electrochemically generated H{sub 2}Te. Pre-treatment of the polyethylene substrates with KMnO{sub 4} to give a Mn-oxide layer was found to improve the Te adhesion and homogeneity. Optical characterization of the layers was performed using UV/VIS/NIR spectroscopy. Such coatings have favorable characteristics for use as solar radiation shields in radiative cooling devices. The simplicity of generation of the very unstable H{sub 2}Te was also exploited to demonstrate formation of size-quantized CdTe nanocrystals. (orig.)

  6. Carrying an anti-nuclear-power badge in the teaching profession. BVerwG, decision of January 25, 1990. Tragen einer Anti-Atomkraft-Plakette im Schuldienst. Urteil des BVerwG vom 25. 1. 1990

    Energy Technology Data Exchange (ETDEWEB)

    Anon,

    1990-06-15

    The carrying of an anti-nuclear-power badge by a teacher during school hours violates the order to practice reticence in political activities. At the beginning of 1977 some teachers, the plaintiff as well, carried anti-nuclear-power badges, i.e. a round badge with a stylized red sun on a yellow background with the inscription 'Nuclear power - No, thank you'. Following a general direction by the educational authorities, the headmistress forbade plaintiff on 4.11.77 to visibly carry this badge during lessons. This protest having been without success, action was brought with partial success at the Administrative and Higher Administrative Court. The Federal Administrative Court dismissed the case. (orig./HSCH).

  7. The relationship of over density to overexposure each film/screen systems in chest radiography

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jung Min; Huo Joon [Korea University, Seoul (Korea, Republic of); Taro, Hayash; Yuji, Ishida; Tatsuya, Sakurai [The Chemotherapeutic Istitute Hospital, Tokyo (Japan)

    1999-06-01

    This study is to calculate the exposed radiation dose using Bit method, NDD calculation method and monogram method without dosimeter. In addition,we can calculate the radiation dose from x-ray film density as a film badge. The authors examined the entrance skin dose from 2 {approx} 3 intercostal chest x-ray film density. We also studied the relationship between film density and equivalent dose in the each screen film system under the different radiation quality and the poor geometry condition of grid ratio. As results, we established the deductive method to define the entrance skin dose from chest x-ray film density. The error range was found in the range -13 percent {approx} +17 percent for between deductive entrance skin dose and the 2 {approx} 3 inter coastal chest x-ray film density to actual detective radiation dose with dosimeter. (author)

  8. SSDL Preparation for Implementation of the Use of OSL Dosimeters in Malaysia

    International Nuclear Information System (INIS)

    Sangau, J.K.; Taiman Kadni; Ahmad Bazlie Abdul Kadir

    2013-01-01

    Since the early 1980's, film badge has been widely used as a device of personal dose monitoring in Malaysia. Secondary Standard Dosimetry Laboratory (SSDL), as a service center for film badge has obtained the supply of personal monitoring film from Agfa Gevaert, Belgium every year. As the uses of film badge have some weaknesses, it has prompted SSDL to find an alternative dosimeter to replace the film badge. Based on the studies that have been conducted, SSDL has selected OSL dosimeter (Optically Stimulated Luminescent Dosimeter) to replace the film badge and is expected to be fully operational by middle of 2015. This paper aims to explain the selection of OSL dosimeter and planning carried out to ensure the success of their application in Malaysia. (author)

  9. Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices.

    Science.gov (United States)

    Taha, Mohammad; Walia, Sumeet; Ahmed, Taimur; Headland, Daniel; Withayachumnankul, Withawat; Sriram, Sharath; Bhaskaran, Madhu

    2017-12-20

    Vanadium has 11 oxide phases, with the binary VO 2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO 2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO 2 synthesis have also been standing issues in VO 2 fabrication. Here, we address these major challenges in harnessing the functionality in VO 2 by demonstrating an approach that enables crystalline, switchable VO 2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO 2 on any substrate, thereby exploiting its untapped potential.

  10. Subdiffraction instrumentation development and application to the elucidation of biological systems, thin films, and organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Lesoine, Michael D [Iowa State Univ., Ames, IA (United States)

    2014-12-01

    Fluorescence and Raman instrumentation was developed to elucidate morphology, information on local environment, and material properties of target systems. Far-field fluorescence and luminescence spectroscopic measurements were performed using a pulsed super-continuum laser source and detector with high temporal resolution. With this arrangement morphologies of structures were coupled with time-correlated data. Polymeric beads and Alexa Fluor 594-phalloidin labeled cellular actin structures of cultured cells were imaged below the diffraction limit using stimulated emission depletion to resolve structures to ≈40nm. Lifetime imaging revealed a 2.0 ± 0.1 ns lifetime for fluorescently-labeled beads in confocal and depletion imaging modes. Depletion imaging was also able to display a change of 2.2 to 2.9 ns for different regions of the cellular actin network of cultured cells with a possible difference in lifetime caused by tryptophan quenching of the dye. Subdiffraction imaging with a resolution of ≈40 nm was also accomplished using luminescence depletion of photostable giant CdSe/14CdS nanocrystal quantum dots in air. Nanocrystal quantum dots, typically not prone to depletion, exhibited this phenomenon when excited with an energy of 50 pJ and 2 nJ of depletion energy. Luminescence depletion required half the energy compared to stimulated emission depletion to achieve the same resolution limit. The luminescence was depleted by as much as ≈92% with no observable photobleaching. Raman measurements of polymer films were performed with 532-nm laser illumination using scanning angle and conventional 180° backscattering modes to determine chemical information. The scanning angle mode achieved an angle resolution of 0.09° and was used to probe a thin layer of polystyrene as well as a diblock copolymer of polystyrene and poly(3-hexylthiophene-2,5-diyl). Enhancements to the Raman signals at selected angles lower than the critical angle for total internal reflection

  11. Evaluation algorithm for Hp (10), Hp (0.07) and response matrix in mixed fields of 137Cs+90Sr/90Y for badge TLD without use of its commercial holder

    International Nuclear Information System (INIS)

    Alvarez R, Jose T.; Tovar M, Victor M.; Castaneda P, Mario; Padilla, Ismael

    2008-01-01

    American standards HPS N 13.11 (1993, 2001) set up performance category tests for deep and shallow personal equivalent dose evaluated by dosimetry processors. These standards establish the parameters bias B, standard deviation S and tolerance level L, whose values indicate the deviations from the conventionally true value for the equivalent dose. On the other hand, for a right evaluation of the equivalent dose, all personal dosimetry systems have four basic components: badge, holder, reading protocol and dose evaluation algorithm. However, in Nuclear Plant Laguna Verde NPP dosimetry laboratory uses the badges Panasonic 802 A without Panasonic UD874AT holder, and instead employs a polyethylene holder bag to protect the badge from misuse. This situation disables the manufacturer algorithm designed for the combination: badge + holder. Therefore, the purpose of this work is to design a personal equivalent dose algorithm for this badge + bag, such this corrected algorithm let fulfill the HPS N 13.11 (1993) categories II, IV, V and VII. The algorithm starts from the readings of the elements: E1, E2, E3 and E4, only corrected by their element correction factor ECF. Additionally, we characterize the badge + bag by means of the response function for: 137 Cs, 85 Kr and 90 Sr/ 90 Y radiation fields. Finally, for validation of the algorithm one verifies that parameters B, S and L accomplish with the limits indicated by the standard. (author)

  12. Determination of BPA, BPB, BPF, BADGE and BFDGE in canned energy drinks by molecularly imprinted polymer cleaning up and UPLC with fluorescence detection.

    Science.gov (United States)

    Gallo, Pasquale; Di Marco Pisciottano, Ilaria; Esposito, Francesco; Fasano, Evelina; Scognamiglio, Gelsomina; Mita, Gustavo Damiano; Cirillo, Teresa

    2017-04-01

    A new method for simultaneous determination of five bisphenols in canned energy drinks by UPLC with fluorescence detection, after clean up on molecularly imprinted polymers, is herein described. The method was validated at two concentration levels, calculating trueness, repeatability and within-laboratory reproducibility, specificity, linearity of detector response, the limits of quantifications and the limits of detection for each bisphenol. The method is specific, reliable and very sensitive, allowing for determination of bisphenol F diglycidyl ether (BFDGE), bisphenol A (BPA), bisphenol B (BPB), bisphenol F (BPF) and bisphenol A diglycidyl ether (BADGE) down to 0.50ng/mL; it was employed to determine contamination levels from these bisphenols in forty energy drinks of different brands, collected from the market in Naples. BPA was detected in 17 out of 40 samples (42.5%); in some energy drinks also BPF, BADGE and BFDGE were determined. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. PREFACE: INERA Workshop: Transition Metal Oxide Thin Films-functional Layers in "Smart windows" and Water Splitting Devices. Parallel session of the 18th International School on Condensed Matter Physics

    Science.gov (United States)

    2014-11-01

    The Special issue presents the papers for the INERA Workshop entitled "Transition Metal Oxides as Functional Layers in Smart windows and Water Splitting Devices", which was held in Varna, St. Konstantin and Elena, Bulgaria, from the 4th-6th September 2014. The Workshop is organized within the context of the INERA "Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures", FP7 Project REGPOT 316309 program, European project of the Institute of Solid State Physics at the Bulgarian Academy of Sciences. There were 42 participants at the workshop, 16 from Sweden, Germany, Romania and Hungary, 11 invited lecturers, and 28 young participants. There were researchers present from prestigious European laboratories which are leaders in the field of transition metal oxide thin film technologies. The event contributed to training young researchers in innovative thin film technologies, as well as thin films characterization techniques. The topics of the Workshop cover the field of technology and investigation of thin oxide films as functional layers in "Smart windows" and "Water splitting" devices. The topics are related to the application of novel technologies for the preparation of transition metal oxide films and the modification of chromogenic properties towards the improvement of electrochromic and termochromic device parameters for possible industrial deployment. The Workshop addressed the following topics: Metal oxide films-functional layers in energy efficient devices; Photocatalysts and chemical sensing; Novel thin film technologies and applications; Methods of thin films characterizations; From the 37 abstracts sent, 21 manuscripts were written and later refereed. We appreciate the comments from all the referees, and we are grateful for their valuable contributions. Guest Editors: Assoc. Prof. Dr.Tatyana Ivanova Prof. DSc Kostadinka Gesheva Prof. DSc Hassan Chamatti Assoc. Prof. Dr. Georgi Popkirov Workshop Organizing Committee Prof

  14. Effects of the Boy Scouts of America Personal Fitness Merit Badge on Cardio-Metabolic Risk, Health Related Fitness and Physical Activity in Adolescent Boys.

    Science.gov (United States)

    Maxwell, Justin; Burns, Ryan D; Brusseau, Timothy A

    2017-01-01

    A growing number of adolescents are more sedentary and have fewer formal opportunities to participate in physical activity. With the mounting evidence that sedentary time has a negative impact on cardiometabolic profiles, health related fitness and physical activity, there is a pressing need to find an affordable adolescent physical activity intervention. One possible intervention that has been overlooked in the past is Boy Scouts of America. There are nearly 900,000 adolescent boys who participate in Boy Scouts in the United States. The purpose of this research study was to evaluate the effect of the Personal Fitness merit badge system on physical activity, health-related fitness, and cardio-metabolic blood profiles in Boy Scouts 11-17 years of age. Participants were fourteen (N = 14) Boy Scouts from the Great Salt Lake Council of the Boy Scouts of America who earned their Personal Fitness merit badge. Classes were held in the Spring of 2016 where boys received the information needed to obtain the merit badge and data were collected. Results from the related-samples Wilcoxon signed rank test showed that the median of differences between VO 2 peak pre-test and post-test scores were statistically significant ( p = 0.004). However, it also showed that the differences between the Pre-MetS (metabolic syndrome) and Post-MetS scores (p = 0.917), average steps taken per day ( p = 0.317), and BMI ( p = 0.419) were not statistically significant. In conclusion, the merit badge program had a positive impact on cardiovascular endurance, suggesting this program has potential to improve cardiovascular fitness and should be considered for boys participating in Boy Scouts.

  15. The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics

    International Nuclear Information System (INIS)

    Cho, Ju-Young; Kim, Dohyung; Park, Yong-Jin; Yang, Tae-Youl; Lee, Yoo-Yong; Joo, Young-Chang

    2015-01-01

    For high switching speed and high reliability of phase-change random access memory (PcRAM), we need to identify materials that enable fast crystallization at elevated temperatures but are stable at and above room temperature. Achieving this goal requires a breakthrough in our understanding of the unique crystallization kinetics of amorphous phase change materials as a fragile glass, described as the non-Arrhenius behavior of atomic mobility. It is a highly rewarding task to unravel the unconventional crystallization kinetics and related properties, because these properties can be utilized to predict the device characteristics. This manuscript utilizes the thin-film mechanics to investigate the crystallization kinetics of amorphous Ge 2 Sb 2 Te 5 phase-change materials doped with Al, Bi, C and N, which is an effective method to analyze the structural changes in amorphous materials. Crystallization temperature, super-cooled liquid region, glass transition temperature and fragility are measured to describe the crystallization kinetics tuned by doping; characteristic fragile-to-strong transition is observed for C and N dopings due to their structural feature as an interstitial dopant. Consequently, doping effects on the phase stability and atomic mobility manifested by the crystallization temperature and the super-cooled liquid region (or 1/fragility) successfully correspond with PcRAM characteristics, i.e., reliability and switching speed, respectively

  16. Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

    Science.gov (United States)

    Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

    2018-03-01

    Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Reduced Graphene Oxide-Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

    Science.gov (United States)

    Ibrahim, Sk; Chakraborty, Koushik; Pal, Tanusri; Ghosh, Surajit

    2017-12-01

    Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide-cadmium zinc sulfide (RGO-Cd0.5Zn0.5S) composite. The reduction in graphene oxide (GO), synthesis of Cd0.5Zn0.5S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV-Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO-CdZnS. An excellent photocurrent generation in RGO-CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

  18. Flip-flop logic circuit based on fully solution-processed organic thin film transistor devices with reduced variations in electrical performance

    Science.gov (United States)

    Takeda, Yasunori; Yoshimura, Yudai; Adib, Faiz Adi Ezarudin Bin; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2015-04-01

    Organic reset-set (RS) flip-flop logic circuits based on pseudo-CMOS inverters have been fabricated using full solution processing at a relatively low process temperatures of 150 °C or less. The work function for printed silver electrodes was increased from 4.7 to 5.4 eV through surface modification with a self-assembled monolayer (SAM) material. A bottom-gate, bottom-contact organic thin-film transistor (OTFT) device using a solution-processable small-molecular semiconductor material exhibited field-effect mobility of 0.40 cm2 V-1 s-1 in the saturation region and a threshold voltage (VTH) of -2.4 V in ambient air operation conditions. In order to reduce the variations in mobility and VTH, we designed a circuit with six transistors arranged in parallel, in order to average out their electrical characteristics. As a result, we have succeeded in reducing these variations without changing the absolute values of the mobility and VTH. The fabricated RS flip-flop circuits were functioned well and exhibited short delay times of 3.5 ms at a supply voltage of 20 V.

  19. Roles of grain boundary and oxygen vacancies in Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} films for resistive switching device application

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaobing, E-mail: xiaobing-yan@126.com, E-mail: mseyanx@nus.edu.sg [Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002 (China); Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore 117576 (Singapore); Li, Yucheng; Zhao, Jianhui; Li, Yan [Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002 (China); Bai, Gang [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Zhu, Siqi [Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Jinan University, Guangzhou 510632 (China)

    2016-01-18

    Oxygen vacancies are widely thought to be responsible for resistive switching (RS) effects based on polycrystalline oxides films. It is also well known that grain boundaries (GB) serve as reservoirs for accumulating oxygen vacancies. Here, Ar gas was introduced to enlarge the size of GB and increase the quantity of oxygen vacancies when the Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulse laser deposition technique. The experimental results indicate that the RS properties of the device exhibits better in the Ar-introduced BST films than in the O{sub 2}-grown BST films. High resolution transmission electron microscopy images show that an amorphous region GB with large size appears between two lattice planes corresponding to oxygen vacancies defects in the Ar-introduced BST. Fourier-transform infrared reflectivity spectroscopy results also reveal highly accumulated oxygen vacancies in the Ar-introduced BST films. And we propose that the conduction transport of the cell was dominantly contributed from not ions migration of oxygen vacancies but the electrons in our case according to the value of activation energies of two kinds of films.

  20. Process and operating device for an apparatus using a running liquid film and application to separation of Zr and Hf tetrachlorides

    International Nuclear Information System (INIS)

    Brun, R.

    1989-01-01

    A process is claimed allowing to maintain a thin film in a running film exchanger, by increasing the flow rate for a short time to establish a film all over the surface. Application is made to continuous condensation of zirconium and hafnium tetrachlorides, from the separation column, by absorption in a liquid solvent made of potassium chloroaluminate [fr