Analytic solutions to linear, time-dependent fission product deposition models for isothermal laminar, slug, or multiregion flow conditions

International Nuclear Information System (INIS)

Durkee, J.W. Jr.

1983-01-01

The time-dependent convective-diffusion equation with radioactive decay is solved analytically in axisymmetric cylindrical geometry for laminar and slug velocity profiles under isothermal conditions. Concentration dependent diffusion is neglected. The laminar flow solution is derived using the method of separation of variables and Frobenius' technique for constructing a series expansion about a regular singular point. The slug flow multiregion solution is obtained using the method of separation of variables. The Davidon Variable Metric Minimization algorithm is used to compute the coupling coefficients. These solutions, which describe the transport of fission products in a flowing stream, are then used to determine the concentration of radioactive material deposited on a conduit wall using a standard mass transfer model. Fission product deposition measurements for five diffusion tubes in a Fort St. Vrain High-Temperature Gas-Cooled reactor plateout probe are analyzed. Using single region slug and laminar models, the wall mass transfer coefficients, diffusion coefficients, and inlet concentrations are determined using least squares analysis. The diffusion coefficients and inlet concentrations are consistent between tubes. The derived diffusion coefficients and wall mass transfer coefficients are in relative agreement with known literature values

Measurement and Prediction of Time-independent and Time-dependent Rheological Behavior of Waxy Crude Oil

OpenAIRE

Yavar Karimi; Ali Reza Solaimany Nazar

2017-01-01

Wax deposition phenomenon changes the rheological behavior of waxy crude oil completely. In the current work, the rheological time-dependent and time-independent behaviors of waxy crude oil samples are studied and flow curve and compliance function are measured for the oil samples with various wax contents at different temperatures. A decrease in temperature and an increase in wax content lead to an increase in the viscosity and yield stress but a significant drop in compliance function. A mo...

Effect of high temperature deposition on CoSi2 phase formation

International Nuclear Information System (INIS)

Comrie, C. M.; Ahmed, H.; Smeets, D.; Demeulemeester, J.; Vantomme, A.; Turner, S.; Van Tendeloo, G.; Detavernier, C.

2013-01-01

This paper discusses the nucleation behaviour of the CoSi to CoSi 2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi 2 , its growth behaviour, and the epitaxial quality of the CoSi 2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi 2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi 2 nucleation temperature above that of CoSi 2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi 2 growth occurs as a function of deposition temperature. First, the CoSi 2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi 2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi 2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi 2 growth mechanism.

Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W

International Nuclear Information System (INIS)

Joshi, R.V.; Prasad, V.; Krusin-Elbaum, L.; Yu, M.; Norcott, M.

1990-01-01

The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH 4 reduction of WF 6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 degree C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase

Temperature dependence of relaxation times in proton components of fatty acids

International Nuclear Information System (INIS)

Kuroda, Kagayaki; Iwabuchi, Taku; Saito, Kensuke; Obara, Makoto; Honda, Masatoshi; Imai, Yutaka

2011-01-01

We examined the temperature dependence of relaxation times in proton components of fatty acids in various samples in vitro at 11 tesla as a standard calibration data for quantitative temperature imaging of fat. The spin-lattice relaxation time, T 1 , of both the methylene (CH 2 ) chain and terminal methyl (CH 3 ) was linearly related to temperature (r>0.98, P 2 signal for calibration and observed the signal with 18% of CH 3 to estimate temperature. These findings suggested that separating the fatty acid components would significantly improve accuracy in quantitative thermometry for fat. Use of the T 1 of CH 2 seems promising in terms of reliability and reproducibility in measuring temperature of fat. (author)

EGFET pH Sensor Performance Dependence on Sputtered TiO2 Sensing Membrane Deposition Temperature

Directory of Open Access Journals (Sweden)

Khairul Aimi Yusof

2016-01-01

Full Text Available Titanium dioxide (TiO2 thin films were sputtered by radio frequency (RF magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V, hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

The influences of target properties and deposition times on pulsed laser deposited hydroxyapatite films

International Nuclear Information System (INIS)

Bao Quanhe; Chen Chuanzhong; Wang Diangang; Liu Junming

2008-01-01

Hydroxyapatite films were produced by pulsed laser deposition from three kinds of hydroxyapatite targets and with different deposition times. A JXA-8800R electron probe microanalyzer (EPMA) with a Link ISIS300 energy spectrum analyzer was used to give the secondary electron image (SE) and determine the element composition of the films. The phases of thin film were analyzed by a D/max-γc X-ray diffractometer (XRD). The Fourier-transform infrared spectroscopy (FT-IR) was used to characterize the hydroxyl, phosphate and other functional groups. The results show that deposited films were amorphous which mainly composed of droplet-like particles and vibration of PO 4 3- groups. With the target sintering temperature deposition times increasing, the density of droplets is decreased. While with deposition times increasing, the density of droplets is increased. With the target sintering temperature and deposition time increasing, the ratio of Ca/P is increasing and higher than that of theoretical value of HA

Predicting long-term temperature increase for time-dependent SAR levels with a single short-term temperature response.

Science.gov (United States)

Carluccio, Giuseppe; Bruno, Mary; Collins, Christopher M

2016-05-01

Present a novel method for rapid prediction of temperature in vivo for a series of pulse sequences with differing levels and distributions of specific energy absorption rate (SAR). After the temperature response to a brief period of heating is characterized, a rapid estimate of temperature during a series of periods at different heating levels is made using a linear heat equation and impulse-response (IR) concepts. Here the initial characterization and long-term prediction for a complete spine exam are made with the Pennes' bioheat equation where, at first, core body temperature is allowed to increase and local perfusion is not. Then corrections through time allowing variation in local perfusion are introduced. The fast IR-based method predicted maximum temperature increase within 1% of that with a full finite difference simulation, but required less than 3.5% of the computation time. Even higher accelerations are possible depending on the time step size chosen, with loss in temporal resolution. Correction for temperature-dependent perfusion requires negligible additional time and can be adjusted to be more or less conservative than the corresponding finite difference simulation. With appropriate methods, it is possible to rapidly predict temperature increase throughout the body for actual MR examinations. © 2015 Wiley Periodicals, Inc.

Response of temperature and density profiles to heat deposition profile and its impact on global scaling in LHD

International Nuclear Information System (INIS)

Yamada, H.; Murakami, S.; Yamazaki, K.

2002-01-01

Energy confinement and heat transport of net current-free NBI-heated plasmas in the Large Helical Device (LHD) are discussed with an emphasis on density dependence. Although the apparent density dependence of the energy confinement time has been demonstrated in a wide parameter range in LHD, the loss of this dependence has been observed in the high density regime under the specific condition. Broad heat deposition due to off-axis alignment and shallow penetration of neutral beams degrades the global energy confinement while the local heat transport maintains a clear temperature dependence lying between Bohm and gyro-Bohm characteristics. The central heat deposition inclines towards an intrinsic density dependence like τ E ∝(n-bar e /P) 0.6 from the saturated state. The broadening of the temperature profile due to the broad heat deposition profile contrasts with the invariant property which has observed widely as profile consistency and stiffness in tokamak experiments. (author)

Response of temperature and density profiles to heat deposition profile and its impact on global scaling in LHD

International Nuclear Information System (INIS)

Yamada, H.; Murakami, S.; Yamazaki, K.

2003-01-01

Energy confinement and heat transport of net current-free NBI-heated plasmas in the Large Helical Device (LHD) are discussed with an emphasis on density dependence. Although the apparent density dependence of the energy confinement time has been demonstrated in a wide parameter range in LHD, the loss of this dependence has been observed in the high density regime under the specific condition. Broad heat deposition due to off-axis alignment and shallow penetration of neutral beams degrades the global energy confinement while the local heat transport maintains a clear temperature dependence lying between Bohm and gyro-Bohm characteristics. The central heat deposition inclines towards an intrinsic density dependence like τ E ∝(n-bars e /P) 0.6 from the saturated state. The broadening of the temperature profile due to the broad heat deposition profile contrasts with the invariant property which has observed widely as profile consistency and stiffness in tokamak experiments. (author)

Structural properties of WO{sub 3} dependent of the annealing temperature deposited by hot-filament metal oxide deposition

Energy Technology Data Exchange (ETDEWEB)

Flores M, J. E. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica, Av. San Claudio y 18 Sur, Ciudad Universitaria, Col. Jardines de San Manuel, 72570 Puebla (Mexico); Diaz R, J. [IPN, Centro de Investigacion en Biotecnologia Aplicada, Ex-Hacienda de San Molino Km 1.5 Tepetitla, 90700 Tlaxcala (Mexico); Balderas L, J. A., E-mail: eflores@ece.buap.mx [IPN, Unidad Profesional Interdisciplinaria de Biotecnologia, Av. Acueducto s/n, Col. Barrio la Laguna, 07340 Mexico D. F. (Mexico)

2012-07-01

In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO{sub 3} that has been grown by hot-filament metal oxide deposition. The chemical stoichiometry was determined by X-ray photoelectron spectroscopy. By X-ray diffraction obtained that the as-deposited WO{sub 3} films present mainly monoclinic crystalline phase. WO{sub 3} optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO{sub 3} from 100 to 500 C. The Raman spectrum of the as-deposited WO{sub 3} film shows four intense peaks that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching ({upsilon}) and W-O bending ({delta}) modes, respectively, which enhanced and increased their intensity with the annealing temperature. (Author)

DiMES Studies of Temperature Dependence of Carbon Erosion and Re-Deposition in the DIII-D Divertor

Energy Technology Data Exchange (ETDEWEB)

Rudakov, D L; Jacob, W; Krieger, K; Litnovsky, A; Philipps, V; West, W P; Wong, C C; Allen, S L; Bastasz, R J; Boedo, J A; Brooks, N H; Boivin, R L; De Temmerman, G; Fenstermacher, M E; Groth, M; Hollmann, E M; Lasnier, C J; McLean, A G; Moyer, R A; Stangeby, P C; Wampler, W R; Watkins, J G; Wienhold, P; Whaley, J

2007-03-15

A strong effect of a moderately elevated surface temperature on net carbon deposition and deuterium co-deposition in the DIII-D divertor was observed under detached conditions. A DiMES sample with a gap 2 mm wide and 18 mm deep was exposed to lower-single-null (LSN) L-mode plasmas first at room temperature, and then at 200 C. At the elevated temperature, deuterium co-deposition in the gap was reduced by an order of magnitude. At the plasma-facing surface of the heated sample net carbon erosion was measured at a rate of 3 nm/s, whereas without heating net deposition is normally observed under detachment. In a related experiment three sets of molybdenum mirrors recessed 2 cm below the divertor floor were exposed to identical LSN ELMy H-mode discharges. The first set of mirrors exposed at ambient temperature exhibited net carbon deposition at a rate of up to 3.7 nm/s and suffered a significant drop in reflectivity. In contrast, two other mirror sets exposed at elevated temperatures between 90 C and 175 C exhibited practically no carbon deposition.

Response of temperature and density profiles to heat deposition profile and its impact on global scaling in LHD

International Nuclear Information System (INIS)

Yamada, H.

2002-01-01

Significant density dependence of the energy confinement time as described in the ISS95 scaling has been demonstrated in the extended parameter regimes in LHD. However, recent experiments have indicated that this density dependence is lost at a certain density under specific conditions. This paper discusses the cause of this saturation and related characteristics of anomalous transport. The saturation of the energy confinement time is observed in the density ramp-up phase of NBI heated plasmas. In contrast to the global energy confinement time, the local heat conduction coefficient still indicates the temperature dependence which is a companion to the density dependence of the energy confinement time. The apparent contradiction between the global confinement and the local transport can be attributed to the change of the heat deposition profile. Through this study, the response of temperature and density profiles to the heat deposition profile is highlighted, which is contrasted to the concept of stiffness or profile consistency observed in tokamaks. The major anomalous transport models based on ITG/TEM and interchange/ballooning modes are assessed. (author)

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

Science.gov (United States)

Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

2018-04-01

Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

International Nuclear Information System (INIS)

Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

2004-01-01

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

Decay Time Measurement for Different Energy Depositions of Plastic Scintillator Fabricated by High Temperature Polymerization Reaction

Energy Technology Data Exchange (ETDEWEB)

Lee, Cheol Ho; Son, Jaebum; Lee, Sangmin; Kim, Tae Hoon; Kim, Yong-Kyun [Hanyang University, Seoul (Korea, Republic of)

2016-10-15

Plastic scintillators are based on organic fluorite. They have many advantages such as fast rise and decay time, high optical transmission, ease of manufacturing, low cost, and large available size. For these reasons they are widely used for particle identification. Also, protection of people against a variety of threats (such as nuclear, radiological, and explosive) represents a true challenge along with the continuing development of science and technology. The plastic scintillator is widely used in various devise, which serves for nuclear, photonics, quantum, and high-energy physics. The plastic scintillator is probably the most widely used organic detector, and polystyrene is one of the most widely used materials in the making of the plastic scintillator detector. Thus, a styrene monomer as a solvent was used to fabricate the plastic scintillator by using high temperature polymerization reaction, and then the emission wavelength and the decay times for different energy depositions were measured by using the fabricated plastic scintillator. A plastic scintillator was fabricated to measure decay time for different energy depositions using the high temperature polymerization. Emission wavelength was measured of 426.05 nm to confirm a scintillator property using the spectrophotometer. Four gamma-ray sources (Cs-137, Co-60, Na-22, and Ba-133) were used to evaluate effect for decay time of different energy depositions. The average decay time of the fabricated plastic scintillator was measured to approximately 4.72 ns slightly higher more than commercial plastic scintillator. In future, light output and linearity will be measured to evaluate other property compared with the commercial scintillator.

Decay Time Measurement for Different Energy Depositions of Plastic Scintillator Fabricated by High Temperature Polymerization Reaction

International Nuclear Information System (INIS)

Lee, Cheol Ho; Son, Jaebum; Lee, Sangmin; Kim, Tae Hoon; Kim, Yong-Kyun

2016-01-01

Plastic scintillators are based on organic fluorite. They have many advantages such as fast rise and decay time, high optical transmission, ease of manufacturing, low cost, and large available size. For these reasons they are widely used for particle identification. Also, protection of people against a variety of threats (such as nuclear, radiological, and explosive) represents a true challenge along with the continuing development of science and technology. The plastic scintillator is widely used in various devise, which serves for nuclear, photonics, quantum, and high-energy physics. The plastic scintillator is probably the most widely used organic detector, and polystyrene is one of the most widely used materials in the making of the plastic scintillator detector. Thus, a styrene monomer as a solvent was used to fabricate the plastic scintillator by using high temperature polymerization reaction, and then the emission wavelength and the decay times for different energy depositions were measured by using the fabricated plastic scintillator. A plastic scintillator was fabricated to measure decay time for different energy depositions using the high temperature polymerization. Emission wavelength was measured of 426.05 nm to confirm a scintillator property using the spectrophotometer. Four gamma-ray sources (Cs-137, Co-60, Na-22, and Ba-133) were used to evaluate effect for decay time of different energy depositions. The average decay time of the fabricated plastic scintillator was measured to approximately 4.72 ns slightly higher more than commercial plastic scintillator. In future, light output and linearity will be measured to evaluate other property compared with the commercial scintillator

Quantum dynamics at finite temperature: Time-dependent quantum Monte Carlo study

Energy Technology Data Exchange (ETDEWEB)

Christov, Ivan P., E-mail: ivan.christov@phys.uni-sofia.bg

2016-08-15

In this work we investigate the ground state and the dissipative quantum dynamics of interacting charged particles in an external potential at finite temperature. The recently devised time-dependent quantum Monte Carlo (TDQMC) method allows a self-consistent treatment of the system of particles together with bath oscillators first for imaginary-time propagation of Schrödinger type of equations where both the system and the bath converge to their finite temperature ground state, and next for real time calculation where the dissipative dynamics is demonstrated. In that context the application of TDQMC appears as promising alternative to the path-integral related techniques where the real time propagation can be a challenge.

Effects of annealing temperatures on the physicochemical properties of nickel-phosphorus deposits

International Nuclear Information System (INIS)

Bai, Allen; Hu, C.-C.

2003-01-01

The dependence of physicochemical properties, including microhardness, magnetism, morphology, crystalline information, roughness factor and hydrogen evolution ability, on the phosphorus content, varying from 0 to 28 atomic percentage (at.%), of Ni-P deposits with annealing in air at eight temperatures (i.e., 100, 200, 300, 400, 500, 600, 700 and 800 deg. C) were systematically compared. The microhardness reached a maximum at 400 deg. C due to the crystallization of Ni and Ni 3 P at 400 deg. C and the significant diffusion of Cu into the Ni-P deposit at temperatures ≥500 deg. C, confirmed by the depth profiles of Ni, P, Cu and O elements. The paramagnetism of Ni-P deposit was gradually transformed into ferromagnetism at 400 deg. C, attributable to the phase separation of Ni and Ni 3 P. The roughness factor, R a , of the deposits with P contents ≤12 at.% were increased with increasing the annealing temperature at temperatures a of the deposits with 17-28 at.% of P is approximately independent of the annealing temperature. The rate of hydrogen evolution decreased with increasing the annealing temperature because the specific activity (i/R a ) of the Ni-P deposits was decreased with increasing the annealing temperature

Germanium nanoparticles grown at different deposition times for memory device applications

International Nuclear Information System (INIS)

Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

2016-01-01

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Germanium nanoparticles grown at different deposition times for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

2016-07-29

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Low temperature deposition: Properties of SiO{sub 2} films from TEOS and ozone by APCVD system

Energy Technology Data Exchange (ETDEWEB)

Juarez, H; Diaz, T; Rosendo, E; Garcia, G; Mora, F; Escalante, G [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur and Av. San Claudio, San Manuel 72000, Puebla (Mexico); Pacio, M; GarcIa, A, E-mail: hjuarez@cs.buap.m [Ingenieria Electrica, Secciaan Electranica del Estado Salido, Centro de Investigacian y de Estudios Avanzados del I. P. N., Av. Instituto Politecnico Nacional 2508, San Pedro Zacatenco, 07360 Mexico, D. F. (Mexico)

2009-05-01

An Atmospheric Pressure Chemical Vapor Deposition (APCVD) system was implemented for SiO{sub 2} nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O{sub 3}) were used and they were mixed into the APCVD system. The deposition temperatures were very low, from 125 to 250 {sup 0}C and the deposition time ranged from 1 to 15 minutes. The measured thicknesses from the deposited SiO{sub 2} films were between 5 and 300 nm. From the by Fourier-Transform Infrared (FTIR) spectra the typical absorption bands of the Si-O bond were observed and it was also observed a dependence on the vibrational modes corresponding to hydroxyl groups with the deposition temperature where the intensity of these vibrations can be related with the grade porosity grade of the films. Furthermore an analytical model has been evoked to determine the activation energy of the reactions in the surface and the gas phase in the deposit films process.

Time and temperature dependence of cascade induced defect production in in situ experiments and computer simulation

International Nuclear Information System (INIS)

Ishino, Shiori

1993-01-01

Understanding of the defect production and annihilation processes in a cascade is important in modelling of radiation damage for establishing irradiation correlation. In situ observation of heavy ion radiation damage has a great prospect in this respect. Time and temperature dependence of formation and annihilation of vacancy clusters in a cascade with a time resolution of 30 ms has been studied with a facility which comprises a heavy ion accelerator and an electron microscope. Formation and annihilation rates of defect clusters have been separately measured by this technique. The observed processes have been analysed by simple kinetic equations, taking into account the sink effect of surface and the defect clusters themselves together with the annihilation process due to thermal emission of vacancies from the defect clusters. Another tool to study time and temperature dependence of defect production in a cascade is computer simulation. Recent results of molecular dynamics calculations on the temperature dependence of cascade evolution are presented, including directional and temperature dependence of the lengths of replacement collision sequences, temperature dependence of the process to reach thermal equilibrium and so on. These results are discussed under general time frame of radiation damage evolution covering from 10 -15 to 10 9 s, and several important issues for the general understanding have been identified. (orig.)

A space and time scale-dependent nonlinear geostatistical approach for downscaling daily precipitation and temperature

KAUST Repository

Jha, Sanjeev Kumar

2015-07-21

A geostatistical framework is proposed to downscale daily precipitation and temperature. The methodology is based on multiple-point geostatistics (MPS), where a multivariate training image is used to represent the spatial relationship between daily precipitation and daily temperature over several years. Here, the training image consists of daily rainfall and temperature outputs from the Weather Research and Forecasting (WRF) model at 50 km and 10 km resolution for a twenty year period ranging from 1985 to 2004. The data are used to predict downscaled climate variables for the year 2005. The result, for each downscaled pixel, is daily time series of precipitation and temperature that are spatially dependent. Comparison of predicted precipitation and temperature against a reference dataset indicates that both the seasonal average climate response together with the temporal variability are well reproduced. The explicit inclusion of time dependence is explored by considering the climate properties of the previous day as an additional variable. Comparison of simulations with and without inclusion of time dependence shows that the temporal dependence only slightly improves the daily prediction because the temporal variability is already well represented in the conditioning data. Overall, the study shows that the multiple-point geostatistics approach is an efficient tool to be used for statistical downscaling to obtain local scale estimates of precipitation and temperature from General Circulation Models. This article is protected by copyright. All rights reserved.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

Science.gov (United States)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

Effect of deposition temperature on the properties of ZnO-doped indium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung Jin; Cho, Shin Ho [Silla University, Busan (Korea, Republic of)

2014-05-15

ZnO-doped In{sub 2}O{sub 3} (ZIO) thin films were deposited on quartz substrates at various deposition temperatures by radio-frequency magnetron sputtering. All the ZIO thin films showed a significant dependence on the deposition temperature. A strong preferential growth orientation was observed for all samples except the one deposited at 25 .deg. C. As the deposition temperature was increased, the crystalline orientation of the main (222) plane did not change, but the full width at half maximum got smaller and the intensity increased rapidly. The ZIO thin film deposited at 100 .deg. C showed the highest figure of merit with an average particle size of 60 nm, a bandgap energy of 3.51 eV, an electrical resistivity of 2.63 x 10{sup -3} Ωcm, and an electron concentration of 4.99 x 10{sup 20} cm{sup -3}. A blue-shift of optical bandgap energy was observed with increasing deposition temperature. These results suggest that the optimum deposition temperature for growing high-quality ZIO films is 100 .deg. C and that the structural, optical, and electrical properties of ZIO thin films can be modulated by controlling the deposition temperature.

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

Directory of Open Access Journals (Sweden)

S. Maikap

2011-01-01

Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

International Nuclear Information System (INIS)

Azooz, A.A.; Al-Jubbori, M.A.

2013-01-01

Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

Temperature dependence of 1H NMR relaxation time, T2, for intact and neoplastic plant tissues

Science.gov (United States)

Lewa, Czesław J.; Lewa, Maria

Temperature dependences of the spin-spin proton relaxation time, T2, have been shown for normal and tumorous tissues collected from kalus culture Nicotiana tabacum and from the plant Kalanchoe daigremontiana. For neoplastic plant tissues, time T2 was increased compared to that for intact plants, a finding similar to that for animal and human tissues. The temperature dependences obtained were compared to analogous relations observed with animal tissues.

A new temperature and humidity dependent surface site density approach for deposition ice nucleation

OpenAIRE

I. Steinke; C. Hoose; O. Möhler; P. Connolly; T. Leisner

2014-01-01

Deposition nucleation experiments with Arizona Test Dust (ATD) as a surrogate for mineral dusts were conducted at the AIDA cloud chamber at temperatures between 220 and 250 K. The influence of the aerosol size distribution and the cooling rate on the ice nucleation efficiencies was investigated. Ice nucleation active surface site (INAS) densities were calculated to quantify the ice nucleation efficiency as a function of temperature, humidity and the aerosol ...

Time-dependent radiolytic yields at room temperature and temperature-dependent absorption spectra of the solvated electrons in polyols

International Nuclear Information System (INIS)

Lin Mingzhang; Mostafavi, M.; Lampre, I.; Muroya, Y.; Katsumura, Y.

2007-01-01

The molar extinction coefficients at the absorption maximum of the solvated electron spectrum have been evaluated to be 900, 970, and 1000 mol -1 ·m 2 for 1,2-ethanediol (12ED), 1,2-propanediol (12PD), and 1,3-propanediol (13PD), respectively. These values are two-third or three-fourth of the value usually reported in the published report. Picosecond pulse radiolysis studies have aided in depicting the radiolytic yield of the solvated electron in these solvents as a function of time from picosecond to microsecond. The radiolytic yield in these viscous solvents is found to be strongly different from that of the water solution. The temperature dependent absorption spectra of the solvated electron in 12ED, 12PD, and 13PD have been also investigated. In all the three solvents, the optical spectra shift to the red with increasing temperature. While the shape of the spectra does not change in 13PD, a widening on the blue side of the absorption band is observed in 12ED and 12PD at elevated temperatures. (authors)

Strength and Anisotropy in Tournemire Shale: Temperature, Pressure and Time Dependences

Science.gov (United States)

Bonnelye, A.; Schubnel, A.; Zhi, G.; David, C.; Dick, P.

2017-12-01

Time and temperature dependent rock deformation has both scientific and socio-economic implications for natural hazards, the oil and gas industry and nuclear waste disposal. During the past decades, most studies on brittle creep have focused on igneous rocks and porous sedimentary rocks. To our knowledge, only few studies have been carried out on the brittle creep behavior of shale. We conducted a series of creep experiments on shale specimens coming from the French Institute for Nuclear Safety (IRSN) underground research laboratory located in Tournemire, France, under two different temperatures (26°C, 75°C) and confining pressures (10 MPa, 80 MPa), for three orientations (σ1along, perpendicular and 45° to bedding). In these long-term experiments (approximately 10 days), stress and strains were recorded continuously, while ultrasonic acoustic velocities were recorded every 1 15 minutes. The brittle creep failure stress of our Tournemire shale samples was systematically observed 50% higher than its short-term peak strength, with larger final axial strain accumulated. During creep, ultrasonic wave velocities first decreased, and then increased gradually. The magnitude of elastic wave velocity variations showed an important orientation and temperature dependence: velocities measured perpendicular to bedding showed increased variation, variation that was enhanced at higher temperature and higher pressure. The case of complete elastic anisotropy reversal was observed for sample deformed perpendicular to bedding, with amount of axial strain needed to reach anisotropy reversal reduced at higher temperature. SEM observations highlight the competition between crack growth, sealing/healing, and possibly mineral rotation, pressure solution or anisotropic compaction during creep defromation. Our study highlights that the short-term peak strength has little meaning in shale material, which can over-consolidate importantly by `plastic' flow. In addition, we show that elastic

Deposition of superconducting (Cu, C)-Ba-O films by pulsed laser deposition at moderate temperature

International Nuclear Information System (INIS)

Yamamoto, Tetsuro; Kikunaga, Kazuya; Obara, Kozo; Terada, Norio; Kikuchi, Naoto; Tanaka, Yasumoto; Tokiwa, Kazuyasu; Watanabe, Tsuneo; Sundaresan, Athinarayanan; Shipra

2007-01-01

Superconducting (Cu, C)-Ba-O thin films have been epitaxially grown on (100) SrTiO 3 at a low growth temperature of 500-600 deg. C by pulsed laser deposition. The dependences of their crystallinity and transport properties on preparation conditions have been investigated in order to clarify the dominant parameters for carbon incorporation and the emergence of superconductivity. It has been revealed that the CO 3 content in the films increases with increasing both the parameters of partial pressure of CO 2 during film growth and those of growth rate and enhancement of superconducting properties. The present study has also revealed that the structural and superconducting properties of the (Cu, C)-Ba-O films are seriously deteriorated by the irradiation of energetic particles during deposition. Suppression of the radiation damage is another key for a high and uniform superconducting transition. By these optimizations, a superconducting onset temperature above 50 K and a zero-resistance temperature above 40 K have been realized

Measurement and Prediction of Time-independent and Time-dependent Rheological Behavior of Waxy Crude Oil

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Yavar Karimi

2017-01-01

Full Text Available Wax deposition phenomenon changes the rheological behavior of waxy crude oil completely. In the current work, the rheological time-dependent and time-independent behaviors of waxy crude oil samples are studied and flow curve and compliance function are measured for the oil samples with various wax contents at different temperatures. A decrease in temperature and an increase in wax content lead to an increase in the viscosity and yield stress but a significant drop in compliance function. A modified Burger model is developed to predict the behavior of the compliance function and a modified Casson model is used to predict the flow curve of the waxy crude oil samples within a vast range of wax contents and temperatures. The proposed Burger and Casson models match with experimental results with R2 of 99.7% and 97.33% respectively.

Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

International Nuclear Information System (INIS)

Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

2008-01-01

The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

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Dychalska Anna

2015-09-01

Full Text Available Evolution of residual stress and its components with increasing temperature in chemical vapor deposited (CVD diamond films has a crucial impact on their high temperature applications. In this work we investigated temperature dependence of stress in CVD diamond film deposited on Si(100 substrate in the temperature range of 30 °C to 480 °C by Raman mapping measurement. Raman shift of the characteristic diamond band peaked at 1332 cm-1 was studied to evaluate the residual stress distribution at the diamond surface. A new approach was applied to calculate thermal stress evolution with increasing tempera­ture by using two commonly known equations. Comparison of the residts obtained from the two methods was presented. The intrinsic stress component was calculated from the difference between average values of residual and thermal stress and then its temperature dependence was discussed.

D2O clusters isolated in rare-gas solids: Dependence of infrared spectrum on concentration, deposition rate, heating temperature, and matrix material

Science.gov (United States)

Shimazaki, Yoichi; Arakawa, Ichiro; Yamakawa, Koichiro

2018-04-01

The infrared absorption spectra of D2O monomers and clusters isolated in rare-gas matrices were systematically reinvestigated under the control of the following factors: the D2O concentration, deposition rate, heating temperature, and rare-gas species. We clearly show that the cluster-size distribution is dependent on not only the D2O concentration but also the deposition rate of a sample; as the rate got higher, smaller clusters were preferentially formed. Under the heating procedures at different temperatures, the cluster-size growth was successfully observed. Since the monomer diffusion was not enough to balance the changes in the column densities of the clusters, the dimer diffusion was likely to contribute the cluster growth. The frequencies of the bonded-OD stretches of (D2O)k with k = 2-6 were almost linearly correlated with the square root of the critical temperature of the matrix material. Additional absorption peaks of (D2O)2 and (D2O)3 in a Xe matrix were assigned to the species trapped in tight accommodation sites.

A proton-recoil neutron spectrometer for time-dependent ion temperatures on the National Ignition Facility

International Nuclear Information System (INIS)

Murphy, T.J.

1995-01-01

Ion temperatures from inertial confinement fusion targets are usually determined by measuring the Doppler broadening of the neutron spectrum using the time-of-flight method. Measurement systems are generally designed so that the contribution of the duration of neutron production (∼100 ps) to the width of the neutron signal is negligible. This precludes the possibility of time-dependent ion temperature. If, however, one could measure the neutron energy and arrival time at a detector independently, then time-dependent neutron spectra could be obtained, and ion temperature information deduced. A concept utilizing a proton-recoil neutron spectrometer has been developed in which recoil protons from a small plastic foil are measured. From the energy, arrival time, and recoil angle of the recoil proton, the birth time and energy of the incident neutron can be deduced. The sensitivity of the system is low, but the higher anticipated neutron yields from the proposed National Ignition Facility may make the technique feasible. Large scintillator arrays currently in use on the Nova facility for neutron spectral measurements consist of ∼1,000 channels and detect between 50 and 500 counts for typical time-integrated data. Time-dependent results would then require about an order of magnitude larger system. Key issues for making this system feasible will be keeping the cost per channel low while allowing adequately time (∼ 50 ps), energy (20 keV), and angular resolution (2 mrad) for each of the proton detectors

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

International Nuclear Information System (INIS)

Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-01-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Time effects of water drainage from deposited back-fill

International Nuclear Information System (INIS)

Baranski, L.A.

1976-01-01

Time effects of water drainage from deposited back-fill in mine excavations are considered. The time dependence of drainage from the deposited material was determined from ''in situ'' measurements with the aid of radioisotope gauges. The measurements were performed for given drainage conditions and practically constant grain size composition. It was found that in a few hours after the end of the back-filling operation the mechanical properties of the deposited material are practically constant. (author)

Temperature dependence of the optical properties of ion-beam sputtered ZrN films

Energy Technology Data Exchange (ETDEWEB)

Larijani, M.M. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); Kiani, M. [Azad University, South Tehran Branch, Department of Physics, Tehran (Iran, Islamic Republic of); Jafari-Khamse, E. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); University of Kashan, Department of Physics, Kashan (Iran, Islamic Republic of); Fathollahi, V. [Nuclear Science Research School, NSTRI, Tehran (Iran, Islamic Republic of)

2014-11-15

The reflectivity of sputtered Zirconium nitride films on glass substrate has been investigated in the spectral energy range of 0.8-6.1 eV as a function of deposition temperature varying between 373 and 723 K. Optical constants of the prepared films have been determined using the Drude analysis. Experimental results showed strong dependency of optical properties of the films, such as optical resistivity on the substrate temperature. The temperature increase of the substrate has shown an increase in both the plasmon frequency and electron scattering time. The electrical behavior of the films showed a good agreement between their optical and electrical resistivity. (orig.)

Temperature-dependent dielectric properties in ITO/AF/Al device

International Nuclear Information System (INIS)

Choi, Hyun-Min; Kim, Won-Jong; Lee, Jong-Yong; Hong, Jin-Woong; Kim, Tae-Wan

2010-01-01

Temperature-dependent dielectric properties were studied in a device with a structure of ITO/amorphous fluoropolymer (AF)/Al. The AF was thermally deposited at a deposition rate of 0.1 A/s to a thickness of 20 nm under a pressure of 5 x 10 -6 Torr. From the dielectric properties of the device, an equivalent circuit for and the equivalent complex impedance Z eq of the device were obtained. The interfacial resistance was found to be approximately 38 Ω. As the temperature was increased, the radius of the Cole-Cole plot and β also increased for a constant applied voltage. However, as the applied voltage was increased, those values decreased at a constant temperature. These behaviors are thought to be due to an orientational polarization effect of the molecules inside the AF layer.

Illumination wavelength and time dependent nano gold photo-deposition and CO oxidation

Directory of Open Access Journals (Sweden)

Siewhui Chong

Full Text Available In this study, nano gold (Au was deposited on titanium dioxide (TiO2 of different morphologies and crystallinities by photo-deposition method under LED irradiation with various wavelengths and irradiation times. The reactivity of carbon monoxide (CO oxidation of the as-prepared catalysts was examined and correlated with the characteristics of TiO2 support and gold particles. Characterization and activity tests showed that the effective illumination wavelength of photo-deposition is strongly determined by the band-gap of TiO2. Au/Cubic-TiO2 (450 nm, 5 min yielded comparatively highest CO conversion of 71%, followed by Au/P25 (375 nm, 1 min and Au/ST21 (340 nm, 1 min. When the photon energy of the LED is lower than the band-gap of TiO2, CO conversion rate increases with the irradiation time due to the decrease in gold particle size which could possibly due to the lower speed of photo-deposition compared to that of concentration diffusion. Keywords: Gold, Catalyst, TiO2, Photodeposition, Carbon monoxide, Oxidation

Post-deposition annealing temperature dependence TiO_2-based EGFET pH sensor sensitivity

International Nuclear Information System (INIS)

Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

2016-01-01

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO_2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO_2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO_2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

Temperature dependence of the residual stresses and mechanical properties in TiN/CrN nano-layered coatings processed by cathodic arc deposition

International Nuclear Information System (INIS)

Lomello, F.; Arab Pour Yazdi; Sanchette, F.; Schuster, F.; Tabarant, M.; Billard, A.

2014-01-01

Nano-layered TiN-CrN coatings were synthesized by cathodic arc deposition (CAD) on M2 tool steel substrates. The aim of this study was to establish a double-correlation between the influence of the bilayer period and the deposition temperature on the resulting mechanical-tribological properties. The superlattice hardening enhancement was observed in samples deposited at different temperatures - i.e. without additional heating, 300 C and 400 C. Nonetheless, the residual compressive stresses are believed to be the responsible for reducing the hardness enhancement when the deposition temperature was increased. For instance, sample deposited without additional heating presented a hardness of 48.5 ± 1.3 GPa, while by increasing the processing temperature up to 400 C it was reduced down to 31.2 ± 4.1 GPa due to the stress relaxation. Indeed, the sample deposited at low temperature which possesses the thinnest bilayer period (13 nm) exhibited better mechanical properties. On the contrary, the role of the interfaces introduced when the period is decreased seems to rule the wear resistance. (authors)

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Influence of emitter temperature on the energy deposition in a low-pressure plasma

International Nuclear Information System (INIS)

Levko, Dmitry; Raja, Laxminarayan L.

2016-01-01

The influence of emitter temperature on the energy deposition into low-pressure plasma is studied by the self-consistent one-dimensional Particle-in-Cell Monte Carlo Collisions model. Depending on the emitter temperature, different modes of discharge operation are obtained. The mode type depends on the plasma frequency and does not depend on the ratio between the densities of beam and plasma electrons. Namely, plasma is stable when the plasma frequency is small. For this plasma, the energy transfer from emitted electrons to plasma electrons is inefficient. The increase in the plasma frequency results first in the excitation of two-stream electron instability. However, since the thermal velocity of plasma electrons is smaller than the electrostatic wave velocity, the resonant wave-particle interaction is inefficient for the energy deposition into the plasma. Further increase in the plasma frequency leads to the distortion of beam of emitted electrons. Then, the electrostatic wave generated due to two-stream instability decays into multiple slower waves. Phase velocities of these waves are comparable with the thermal velocity of plasma electrons which makes possible the resonant wave-particle interaction. This results in the efficient energy deposition from emitted electrons into the plasma.

Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH Sensors

Science.gov (United States)

Bazilah Rosli, Aimi; Awang, Zaiki; Sobihana Shariffudin, Shafinaz; Herman, Sukreen Hana

2018-03-01

Zinc Oxide (ZnO) nanostructures were deposited using chemical bath deposition (CBD) technique in water bath at 95 °C for 4 h. Post-deposition heat treatment in air ambient at various temperature ranging from 200-600 °C for 30 min was applied in order to enhance the electrical properties of ZnO nanostructures as the sensing membrane of extended-gate field effect transistor (EGFET) pH sensor. The as-deposited sample was prepared for comparison. The samples were characterized in terms of physical and sensing properties. FESEM images showed that scattered ZnO nanorods were formed for the as-deposited sample, and the morphology of the ZnO nanorods changed to ZnO nanoflowers when the heat treatment was applied from 200-600 °C. For sensing properties, the samples heated at 300 °C showed the higher sensitivity which was 39.9 mV/pH with the linearity of 0.9792. The sensing properties was increased with the increasing annealing treatment temperature up to 300 °C before decreased drastically.

Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

Directory of Open Access Journals (Sweden)

Anuar Kassim

2010-12-01

Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

Directory of Open Access Journals (Sweden)

A. C. Nwanya

2013-01-01

Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

International Nuclear Information System (INIS)

Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

2014-01-01

The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

Chemical vapour deposition diamond. Charge carrier movement at low temperatures and use in time-critical applications

International Nuclear Information System (INIS)

Jansen, Hendrik

2013-09-01

Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, over laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

CERN Document Server

Jansen, Hendrik; Pernegger, Heinz

Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

Temperature dependence of coercivity behavior in iron films on silicone oil surfaces

International Nuclear Information System (INIS)

Xu Xiaojun; Ye Quanlin; Ye Gaoxiang

2007-01-01

A new iron film system, deposited on silicone oil surfaces by vapor phase deposition method, has been fabricated and its microstructure as well as magnetic properties has been studied. It is found that the temperature dependence of the coercive field H c (T) of the films exhibits a peak around a critical temperature T crit =10-15 K: for the temperature T crit ,H c (T) increases with the temperature; if T>T crit , however, it decreases rapidly and then approaches a steady value as T further increases. Our study shows that, for T>T crit , the observed coercivity behavior is mainly dominated by the effect of the non-uniform single-domain particle size distribution, and for T crit , the anomalous coercivity behavior may be resulted from the surface anisotropy, the surface effect and the characteristic internal stress distribution in the films. The influence of the shape and size of the particles on the thermal dependence of the magnetization is also investigated

Enhanced diffusion with abnormal temperature dependence in underdamped space-periodic systems subject to time-periodic driving

Science.gov (United States)

Marchenko, I. G.; Marchenko, I. I.; Zhiglo, A. V.

2018-01-01

We present a study of the diffusion enhancement of underdamped Brownian particles in a one-dimensional symmetric space-periodic potential due to external symmetric time-periodic driving with zero mean. We show that the diffusivity can be enhanced by many orders of magnitude at an appropriate choice of the driving amplitude and frequency. The diffusivity demonstrates abnormal (decreasing) temperature dependence at the driving amplitudes exceeding a certain value. At any fixed driving frequency Ω normal temperature dependence of the diffusivity is restored at low enough temperatures, T oscillation frequency at the potential minimum, the diffusivity is shown to decrease with Ω according to a power law, with the exponent related to the transient superdiffusion exponent. This behavior is found similar for the cases of sinusoidal in time and piecewise constant periodic ("square") driving.

The Time-Dependent Chemistry of Cometary Debris in the Solar Corona

Science.gov (United States)

Pesnell, W. D.; Bryans, P.

2015-01-01

Recent improvements in solar observations have greatly progressed the study of sungrazing comets. They can now be imaged along the entirety of their perihelion passage through the solar atmosphere, revealing details of their composition and structure not measurable through previous observations in the less volatile region of the orbit further from the solar surface. Such comets are also unique probes of the solar atmosphere. The debris deposited by sungrazers is rapidly ionized and subsequently influenced by the ambient magnetic field. Measuring the spectral signature of the deposited material highlights the topology of the magnetic field and can reveal plasma parameters such as the electron temperature and density. Recovering these variables from the observable data requires a model of the interaction of the cometary species with the atmosphere through which they pass. The present paper offers such a model by considering the time-dependent chemistry of sublimated cometary species as they interact with the solar radiation field and coronal plasma. We expand on a previous simplified model by considering the fully time-dependent solutions of the emitting species' densities. To compare with observations, we consider a spherically symmetric expansion of the sublimated material into the corona and convert the time-dependent ion densities to radial profiles. Using emissivities from the CHIANTI database and plasma parameters derived from a magnetohydrodynamic simulation leads to a spatially dependent emission spectrum that can be directly compared with observations. We find our simulated spectra to be consistent with observation.

Dry deposition to vegetated surfaces: parametric dependencies

International Nuclear Information System (INIS)

Underwood, B.Y.

1987-12-01

The dry deposition velocity of airborne pollutants to vegetated surfaces depends on the physico-chemical form of the pollutant, on meteorological conditions (windspeed, atmospheric stability) and on characteristics of the surface cover. This report examines these dependencies, drawing on experimental data and on information from theoretical analyses. A canopy model is outlined which uses first-order closure of the equations for turbulent transport of momentum (or matter), with losses of momentum (or matter) to individual canopy elements parameterised in terms of the mean windspeed: the model has previously been tested against experimental data on an artificial 'grass' canopy. The model is used to elucidate the features of the dependence of deposition velocity on windspeed and on whether the pollutant is in gaseous or particulate form: in the former case, the dependence on the molecular diffusivity of the gas is shown; in the latter case, dependencies on particle diameter and density are deduced. The predictions are related to available measurements. Additional hypotheses are introduced to treat the influence of atmospheric stability on deposition, and the analysis is used to shed light on the somewhat confusing picture that has emerged from past experimental studies. In considering the dependence of deposition velocity on the structural properties of the vegetation, it is established that more parameters than the single one conventionally used -aerodynamic roughness length - are needed to characterise the surface cover. Some indications of the extent of variation in deposition velocity from one type of vegetation to another are elicited from the model. (author)

Deposit Shedding in Biomass-Fired Boilers: Shear Adhesion Strength Measurements

DEFF Research Database (Denmark)

Laxminarayan, Yashasvi; Jensen, Peter Arendt; Wu, Hao

2017-01-01

Ash deposition on boiler surfaces is a major problem encountered in biomass combustion. Timely removal of ash deposits is essentialfor optimal boiler operation. In order to improve the understanding of deposit shedding in boilers, this study investigates the adhesion strength of biomass ash from...... off by an electrically controlled arm, and the corresponding adhesion strength was measured. The effect of sintering temperature, sintering time, deposit composition, thermal shocks on the deposit, and steel type was investigated. The results reveal that the adhesion strength of ash deposits...... is dependent on two factors: ash melt fraction, and corrosion occurring at the deposit–tube interface. Adhesion strength increases with increasing sintering temperature, sharply increasing at the ash deformation temperature. However, sintering time, as well as the type of steel used, does not have...

Monitoring Streambed Scour/Deposition Under Nonideal Temperature Signal and Flood Conditions

Science.gov (United States)

DeWeese, Timothy; Tonina, Daniele; Luce, Charles

2017-12-01

Streambed erosion and deposition are fundamental geomorphic processes in riverbeds, and monitoring their evolution is important for ecological system management and in-stream infrastructure stability. Previous research showed proof of concept that analysis of paired temperature signals of stream and pore waters can simultaneously provide monitoring scour and deposition, stream sediment thermal regime, and seepage velocity information. However, it did not address challenges often associated with natural systems, including nonideal temperature variations (low-amplitude, nonsinusoidal signal, and vertical thermal gradients) and natural flooding conditions on monitoring scour and deposition processes over time. Here we addressed this knowledge gap by testing the proposed thermal scour-deposition chain (TSDC) methodology, with laboratory experiments to test the impact of nonideal temperature signals under a range of seepage velocities and with a field application during a pulse flood. Both analyses showed excellent match between surveyed and temperature-derived bed elevation changes even under very low temperature signal amplitudes (less than 1°C), nonideal signal shape (sawtooth shape), and strong and changing vertical thermal gradients (4°C/m). Root-mean-square errors on predicting the change in streambed elevations were comparable with the median grain size of the streambed sediment. Future research should focus on improved techniques for temperature signal phase and amplitude extractions, as well as TSDC applications over long periods spanning entire hydrographs.

Time-Dependent Behavior of Shrinkage Strain for Early Age Concrete Affected by Temperature Variation

OpenAIRE

Qin, Yu; Yi, Zhijian; Wang, Weina; Wang, Di

2017-01-01

Shrinkage has been proven to be an important property of early age concrete. The shrinkage strain leads to inherent engineering problems, such as cracking and loss of prestress. Atmospheric temperature is an important factor in shrinkage strain. However, current research does not provide much attention to the effect of atmospheric temperature on shrinkage of early age concrete. In this paper, a laboratory study was undertaken to present the time-dependent shrinkage of early age concrete under...

Coherent quantum transport in disordered systems: II. Temperature dependence of carrier diffusion coefficients from the time-dependent wavepacket diffusion method

International Nuclear Information System (INIS)

Zhong, Xinxin; Zhao, Yi; Cao, Jianshu

2014-01-01

The time-dependent wavepacket diffusion method for carrier quantum dynamics (Zhong and Zhao 2013 J. Chem. Phys. 138 014111), a truncated version of the stochastic Schrödinger equation/wavefunction approach that approximately satisfies the detailed balance principle and scales well with the size of the system, is applied to investigate the carrier transport in one-dimensional systems including both the static and dynamic disorders on site energies. The predicted diffusion coefficients with respect to temperature successfully bridge from band-like to hopping-type transport. As demonstrated in paper I (Moix et al 2013 New J. Phys. 15 085010), the static disorder tends to localize the carrier, whereas the dynamic disorder induces carrier dynamics. For the weak dynamic disorder, the diffusion coefficients are temperature-independent (band-like property) at low temperatures, which is consistent with the prediction from the Redfield equation, and a linear dependence of the coefficient on temperature (hopping-type property) only appears at high temperatures. In the intermediate regime of dynamic disorder, the transition from band-like to hopping-type transport can be easily observed at relatively low temperatures as the static disorder increases. When the dynamic disorder becomes strong, the carrier motion can follow the hopping-type mechanism even without static disorder. Furthermore, it is found that the memory time of dynamic disorder is an important factor in controlling the transition from the band-like to hopping-type motions. (paper)

Low-Temperature Deposition of Layered SnSe2 for Heterojunction Diodes

KAUST Repository

Serna, Martha I.

2018-04-27

Tin diselenide (SnSe) has been recently investigated as an alternative layered metal dichalcogenide due to its unique electrical and optoelectronics properties. Although there are several reports on the deposition of layered crystalline SnSe films by chemical and physical methods, synthesis methods like pulsed laser deposition (PLD) are not reported. An attractive feature of PLD is that it can be used to grow 2D films over large areas. In this report, a deposition process to grow stoichiometric SnSe on different substrates such as single crystals (Sapphire) and amorphous oxides (SiO and HfO) is reported. A detailed process flow for the growth of 2D SnSe at temperatures of 300 °C is presented, which is substantially lower than temperatures used in chemical vapor deposition and molecular beam epitaxy. The 2D SnSe films exhibit a mobility of ≈4.0 cm V s, and are successfully used to demonstrate SnSe/p-Si heterojunction diodes. The diodes show I /I ratios of 10-10 with a turn on voltage of <0.5 V, and ideality factors of 1.2-1.4, depending on the SnSe film growth conditions.

Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

Energy Technology Data Exchange (ETDEWEB)

Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com [NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my [Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Herman, S. H., E-mail: hana1617@salam.uitm.edu.my [Core of Frontier Materials & Industry Applications, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

Effects of deposition temperature on electrodeposition of zinc–nickel alloy coatings

International Nuclear Information System (INIS)

Qiao, Xiaoping; Li, Helin; Zhao, Wenzhen; Li, Dejun

2013-01-01

Highlights: ► Both normal and anomalous deposition can be realized by changing bath temperature. ► The Ni content in Zn–Ni alloy deposit increases sharply as temperature reach 60 °C. ► The abrupt change in coating composition is caused by the shift of cathodic potential. ► The deposition temperature has great effect on microstructure of Zn–Ni alloy deposit. -- Abstract: Zinc–nickel alloy coatings were electrodeposited on carbon steel substrates from the ammonium chloride bath at different temperatures. The composition, phase structure and morphology of these coatings were analyzed by energy dispersive spectrometer, X-ray diffractometer and scanning electron microscopy respectively. Chronopotentiometry and potentiostatic methods were also employed to analyze the possible causes of the composition and structure changes induced by deposition temperature. It has been shown that both normal and anomalous co-deposition of zinc and nickel could be realized by changing deposition temperature under galvanostatic conditions. The abrupt changes in the composition and phase structure of the zinc–nickel alloy coatings were observed when deposition temperature reached 60 °C. The sharply decrease of current efficiency for zinc–nickel co-deposition was also observed when deposition temperature is higher than 40 °C. Analysis of the partial current densities showed that the decrease of current efficiency with the rise of deposition temperature was due to the enhancement of the hydrogen evolution. It was also confirmed that the ennoblement of cathodic potential was the cause for the increase of nickel content in zinc–nickel alloy coatings as a result of deposition temperature rise. The good zinc–nickel alloy coatings with compact morphology and single γ phase could be obtained when the deposition temperature was fixed at 30–40 °C

Temperature field due to time-dependent heat sources in a large rectangular grid. Application for the KBS-3 repository

International Nuclear Information System (INIS)

Probert, T.; Claesson, Johan

1997-04-01

In the KBS-3 concept canisters containing nuclear waste are deposited along parallel tunnels over a large rectangular area deep below the ground surface. The temperature field in rock due to such a rectangular grid of heat-releasing canisters is studied. An analytical solution for this problem for any heat source has been presented in a preceding paper. The complete solution is summarized in this paper. The solution is by superposition divided into two main parts. There is a global temperature field due to the large rectangular canister area, while a local field accounts for the remaining heat source problem. In this sequel to the first report, the local solution is discussed in detail. The local solution consists of three parts corresponding to line heat sources along tunnels, point heat sources along a tunnel and a line heat source along a canister. Each part depends on two special variables only. These parts are illustrated in dimensionless form. Inside the repository the local temperature field is periodic in the horizontal directions and has a short extent in the vertical direction. This allows us to look at the solution in a parallelepiped around a canister. The solution in the parallelepiped is valid for all canisters that are not too close to the repository edges. The total temperature field is calculated for the KBS-3 case. The temperature field is calculated using a heat release that is valid for the first 10 000 years after deposition. The temperature field is shown in 23 figures in order to illustrate different aspects of the complex thermal process

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

Time-fractional particle deposition in porous media

Science.gov (United States)

Xu, Jianping

2017-05-01

In the percolation process where fluids carry small solid particles, particle deposition causes a real-time permeability change of the medium as the swarm of particles propagates along the medium. Then the permeability change influences percolation and deposition behaviors as a feedback. This fact triggers memory effect in the deposition dynamics, which means the particulate transport and deposition behaviors become history-dependent. In this paper, we conduct the time-fractional generalization of the classical phenomenological model of particle deposition in porous media to incorporate the memory effect. We tested and compared the effects of employing different types of fractional operators, i.e. the Riemann-Liouville type, the Hadamard type and the Prabhakar type. Numerical simulation results show that the system behaviors vary according to the change of distinct memory kernels in an expected way. We then discuss the physical meaning of the time-fractional generalization. It is shown that different types of fractional operators unanimously ground themselves on the local-Newtonian time transformation in a complex system, which is equivalent to a class of history integrals. By the introduction of various memory kernels, it enables the model to more powerfully fit and approximate observed data. Further, the fundamental meaning of this work is not to show which fractional operator is ‘better’, but to argue collectively the legitimacy and practicality of a non-Markovian particle deposition dynamics in porous media, and in fact it is admissible to a bunch of memory kernels which differ greatly from each other in functional forms. Hopefully the presented generalized mass conservation formalism offers a broader framework to investigate transport problems in porous media.

Time-fractional particle deposition in porous media

International Nuclear Information System (INIS)

Xu, Jianping

2017-01-01

In the percolation process where fluids carry small solid particles, particle deposition causes a real-time permeability change of the medium as the swarm of particles propagates along the medium. Then the permeability change influences percolation and deposition behaviors as a feedback. This fact triggers memory effect in the deposition dynamics, which means the particulate transport and deposition behaviors become history-dependent. In this paper, we conduct the time-fractional generalization of the classical phenomenological model of particle deposition in porous media to incorporate the memory effect. We tested and compared the effects of employing different types of fractional operators, i.e. the Riemann–Liouville type, the Hadamard type and the Prabhakar type. Numerical simulation results show that the system behaviors vary according to the change of distinct memory kernels in an expected way. We then discuss the physical meaning of the time-fractional generalization. It is shown that different types of fractional operators unanimously ground themselves on the local-Newtonian time transformation in a complex system, which is equivalent to a class of history integrals. By the introduction of various memory kernels, it enables the model to more powerfully fit and approximate observed data. Further, the fundamental meaning of this work is not to show which fractional operator is ‘better’, but to argue collectively the legitimacy and practicality of a non-Markovian particle deposition dynamics in porous media, and in fact it is admissible to a bunch of memory kernels which differ greatly from each other in functional forms. Hopefully the presented generalized mass conservation formalism offers a broader framework to investigate transport problems in porous media. (paper)

Diacetylene time-temperature indicators

International Nuclear Information System (INIS)

Patel, G.N.; Yee, K.C.

1980-01-01

An improved recording device is described, useful for measuring the integrated time-temperature or integrated radiation-dosage history of an article, comprising a substrate onto which an acetylenic compound, containing at least two conjugated c*c groups, in an inactive form, is deposited. The inactive form is capable of being converted by melt or solvent recrystallization to an active form, which undergoes 1,4-addition polymerization resulting in an irreversible, progressive color change. The color change produced at any given point in time represents an integrated time-temperature history of thermal annealing or integrated radiation-dosage history of exposure to actinic radiation to which an article has been exposed. Also described is a process for producing an inactive form of the acetylenic compound. A film and a fiber, made from the inactive form of an acetylenic compound are also described

Microarray study of temperature-dependent sensitivity and selectivity of metal/oxide sensing interfaces

Science.gov (United States)

Tiffany, Jason; Cavicchi, Richard E.; Semancik, Stephen

2001-02-01

Conductometric gas microsensors offer the benefits of ppm-level sensitivity, real-time data, simple interfacing to electronics hardware, and low power consumption. The type of device we have been exploring consists of a sensor film deposited on a "microhotplate"- a 100 micron platform with built-in heating (to activate reactions on the sensing surface) and thermometry. We have been using combinatorial studies of 36-element arrays to characterize the relationship between sensor film composition, operating temperature, and response, as measured by the device's sensitivity and selectivity. Gases that have been tested on these arrays include methanol, ethanol, dichloromethane, propane, methane, acetone, benzene, hydrogen, and carbon monoxide, and are of interest in the management of environmental waste sites. These experiments compare tin oxide films modified by catalyst overlayers, and ultrathin metal seed layers. The seed layers are used as part of a chemical vapor deposition process that uses each array element's microheater to activate the deposition of SnO2, and control its microstructure. Low coverage (20 Ê) catalytic metals (Pd, Cu, Cr, In, Au) are deposited on the oxides by masked evaporation or sputtering. This presentation demonstrates the value of an array-based approach for developing film processing methods, measuring performance characteristics, and establishing reproducibility. It also illustrates how temperature-dependent response data for varied metal/oxide compositions can be used to tailor a microsensor array for a given application.

Inverse heat transfer analysis of a functionally graded fin to estimate time-dependent base heat flux and temperature distributions

International Nuclear Information System (INIS)

Lee, Haw-Long; Chang, Win-Jin; Chen, Wen-Lih; Yang, Yu-Ching

2012-01-01

Highlights: ► Time-dependent base heat flux of a functionally graded fin is inversely estimated. ► An inverse algorithm based on the conjugate gradient method and the discrepancy principle is applied. ► The distributions of temperature in the fin are determined as well. ► The influence of measurement error and measurement location upon the precision of the estimated results is also investigated. - Abstract: In this study, an inverse algorithm based on the conjugate gradient method and the discrepancy principle is applied to estimate the unknown time-dependent base heat flux of a functionally graded fin from the knowledge of temperature measurements taken within the fin. Subsequently, the distributions of temperature in the fin can be determined as well. It is assumed that no prior information is available on the functional form of the unknown base heat flux; hence the procedure is classified as the function estimation in inverse calculation. The temperature data obtained from the direct problem are used to simulate the temperature measurements. The influence of measurement errors and measurement location upon the precision of the estimated results is also investigated. Results show that an excellent estimation on the time-dependent base heat flux and temperature distributions can be obtained for the test case considered in this study.

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Influence of deposition temperature and amorphous carbon on microstructure and oxidation resistance of magnetron sputtered nanocomposite Crsbnd C films

Science.gov (United States)

Nygren, Kristian; Andersson, Matilda; Högström, Jonas; Fredriksson, Wendy; Edström, Kristina; Nyholm, Leif; Jansson, Ulf

2014-06-01

It is known that mechanical and tribological properties of transition metal carbide films can be tailored by adding an amorphous carbon (a-C) phase, thus making them nanocomposites. This paper addresses deposition, microstructure, and for the first time oxidation resistance of magnetron sputtered nanocomposite Crsbnd C/a-C films with emphasis on studies of both phases. By varying the deposition temperature between 20 and 700 °C and alternating the film composition, it was possible to deposit amorphous, nanocomposite, and crystalline Crsbnd C films containing about 70% C and 30% Cr, or 40% C and 60% Cr. The films deposited at temperatures below 300 °C were X-ray amorphous and 500 °C was required to grow crystalline phases. Chronoamperometric polarization at +0.6 V vs. Ag/AgCl (sat. KCl) in hot 1 mM H2SO4 resulted in oxidation of Crsbnd C, yielding Cr2O3 and C, as well as oxidation of C. The oxidation resistance is shown to depend on the deposition temperature and the presence of the a-C phase. Physical characterization of film surfaces show that very thin C/Cr2O3/Crsbnd C layers develop on the present material, which can be used to improve the oxidation resistance of, e.g. stainless steel electrodes.

Time, stress, and temperature-dependent deformation in nanostructured copper: Stress relaxation tests and simulations

International Nuclear Information System (INIS)

Yang, Xu-Sheng; Wang, Yun-Jiang; Wang, Guo-Yong; Zhai, Hui-Ru; Dai, L.H.; Zhang, Tong-Yi

2016-01-01

In the present work, stress relaxation tests, high-resolution transmission electron microscopy (HRTEM), and molecular dynamics (MD) simulations were conducted on coarse-grained (cg), nanograined (ng), and nanotwinned (nt) copper at temperatures of 22 °C (RT), 30 °C, 40 °C, 50 °C, and 75 °C. The comprehensive investigations provide sufficient information for the building-up of a formula to describe the time, stress, and temperature-dependent deformation and clarify the relationship among the strain rate sensitivity parameter, stress exponent, and activation volume. The typically experimental curves of logarithmic plastic strain rate versus stress exhibited a three staged relaxation process from a linear high stress relaxation region to a subsequent nonlinear stress relaxation region and finally to a linear low stress relaxation region, which only showed-up at the test temperatures higher than 22 °C, 22 °C, and 30 °C, respectively, in the tested cg-, ng-, and nt-Cu specimens. The values of stress exponent, stress-independent activation energy, and activation volume were determined from the experimental data in the two linear regions. The determined activation parameters, HRTEM images, and MD simulations consistently suggest that dislocation-mediated plastic deformation is predominant in all tested cg-, ng-, and nt-Cu specimens in the initial linear high stress relaxation region at the five relaxation temperatures, whereas in the linear low stress relaxation region, the grain boundary (GB) diffusion-associated deformation is dominant in the ng- and cg-Cu specimens, while twin boundary (TB) migration, i.e., twinning and detwinning with parallel partial dislocations, governs the time, stress, and temperature-dependent deformation in the nt-Cu specimens.

Sputter deposited titanium disilicide at high substrate temperatures

Science.gov (United States)

Tanielian, M.; Blackstone, S.; Lajos, R.

1984-08-01

Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

Atomic layer deposition of GaN at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi [UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

2012-01-15

The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

Thin gold films on SnO2:In: Temperature-dependent effects on the optical properties

International Nuclear Information System (INIS)

Lansåker, P.C.; Niklasson, G.A.; Granqvist, C.G.

2012-01-01

Gold films with thicknesses of 5 ± 0.5 nm were sputter deposited onto SnO 2 :In-coated glass kept at different temperatures up to 140 °C, and similar films, deposited onto substrates at 25 °C, were annealing post treated at the same temperatures. Nanostructures and optical properties were recorded by scanning electron microscopy and spectrophotometry in the 0.3 to 2.5 μm wavelength range, respectively. Annealing had a minor influence on the optical transmittance despite significant changes in the scale of the nanostructure, whereas deposition onto substrates heated to 140 °C yielded granular films with strong plasmon absorption of luminous radiation. These results are of considerable interest for optical devices with gold films prepared at elevated temperature or operating at such temperature. - Highlights: ► Thin gold films have been deposited onto base layers of SnO 2 :In. ► The gold depositions were made onto both non-heated and heated substrates. ► Gold depositions onto non-heated substrates were followed by heat treatment. ► Depending on heating procedure, the gold films show apparently different structure.

Lanthanoid titanate film structure deposited at different temperatures in vacuum

International Nuclear Information System (INIS)

Kushkov, V.D.; Zaslavskij, A.M.; Mel'nikov, A.V.; Zverlin, A.V.; Slivinskaya, A.Eh.

1991-01-01

Influence of deposition temperature on the structure of lanthanoid titanate films, prepared by the method of high-rate vacuum condensation. It is shown that formation of crystal structure, close to equilibrium samples, proceeds at 1100-1300 deg C deposition temperatures. Increase of temperature in this range promotes formation of films with higher degree of structural perfection. Amorphous films of lanthanoid titanates form at 200-1000 deg C. Deposition temperature shouldn't exceed 1400 deg C to prevent the formation of perovskite like phases in films

Measuring temperature dependence of soil respiration: importance of incubation time, soil type, moisture content and model fits

Science.gov (United States)

Schipper, L. A.; Robinson, J.; O'Neill, T.; Ryburn, J.; Arcus, V. L.

2015-12-01

Developing robust models of the temperature response and sensitivity of soil respiration is critical for determining changes carbon cycling in response to climate change and at daily to annual time scales. Currently, approaches for measuring temperature dependence of soil respiration generally use long incubation times (days to weeks and months) at a limited number of incubation temperatures. Long incubation times likely allow thermal adaptation by the microbial population so that results are poorly representative of in situ soil responses. Additionally, too few incubation temperatures allows for the fit and justification of many different predictive equations, which can lead to inaccuracies when used for carbon budgeting purposes. We have developed a method to rapidly determine the response of soil respiration rate to wide range of temperatures. An aluminium block with 44 sample slots is heated at one end and cooled at the other to give a temperature gradient from 0 to 55°C at about one degree increments. Soil respiration is measured within 5 hours to minimise the possibility of thermal adaptation. We have used this method to demonstrate the similarity of temperature sensitivity of respiration for different soils from the same location across seasons. We are currently testing whether long-term (weeks to months) incubation alter temperature response and sensitivity that occurs in situ responses. This method is also well suited for determining the most appropriate models of temperature dependence and sensitivity of soil respiration (including macromolecular rate theory MMRT). With additional testing, this method is expected to be a more reliable method of measuring soil respiration rate for soil quality and modelling of soil carbon processes.

Effect of deposition temperature on the properties of nitrogen-doped AZO thin films grown on glass by rf reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Cho, Shinho, E-mail: scho@silla.ac.kr [Center for Green Fusion Technology and Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Heetae [Backlight Technology, LCD Division, Samsung Electronics Co., Ltd., Asan 336-841 (Korea, Republic of)

2010-09-15

Nitrogen-doped aluminum zinc oxide (NAZO) thin films were deposited on glass substrates at various deposition temperatures by rf reactive magnetron sputtering. The NAZO film deposited at 400 deg. C shows a strongly c-axis preferred orientation and n-type conduction with a resistivity of 2.1 x 10{sup -2} {Omega} cm, Hall mobility of 7.7 cm{sup 2} V{sup -1} s{sup -1}, and electron concentration of 3.8 x 10{sup 19} cm{sup -3}. The optimum crystallographic structure occurs at a deposition temperature of 400 deg. C, where a considerable crystallinity enhancement of the films is observed. The band gap energies of the NAZO films, obtained by using Tauc model and parabolic bands, are found to significantly depend on the deposition temperature, along with the band gap narrowing at higher deposition temperature due to renormalization effects.

Temperature-dependent μ-Raman investigation of struvite crystals.

Science.gov (United States)

Prywer, Jolanta; Kasprowicz, D; Runka, T

2016-04-05

The effect of temperature on the vibrational properties of struvite crystals grown from silica gels was systematically studied by μ-Raman spectroscopy. The time-dependent Raman spectra recorded in the process of long time annealing of struvite crystal at 353 K do not indicate structural changes in the struvite crystal with the time of annealing. The temperature-dependent Raman spectra recorded in the range 298-423 K reveal a phase transition in struvite at about 368 K. Above this characteristic temperature, some of bands assigned to vibrations of the PO4 and NH4 tetrahedra and water molecules observed in the Raman spectra in low temperatures (orthorhombic phase) change their spectral parameters or disappear, which indicates a transition to a higher symmetry structure of struvite in the range of high temperatures. Copyright © 2016 Elsevier B.V. All rights reserved.

Evolution of the microstructure in electrochemically deposited copper films at room temperature

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2007-01-01

The room temperature evolution of the microstructure in copper electrodeposits (self-annealing) was investigated by means of X-ray diffraction analysis and simultaneous measurement of the electrical resistivity as a function of time with an unprecedented time resolution. Independent of the copper...... the crystallographic texture changes by a multiple twinning mechanism. The kinetics of self-annealing is strongly affected by the thickness of the deposit. Storage of the copper films at sub-zero temperatures effectively hinders self-annealing and does not affect the kinetics of self-annealing upon reheating to room...... temperature....

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

2016-03-31

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

Directory of Open Access Journals (Sweden)

Neha Batra

2015-06-01

Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt

This thesis concerns the deposition of thin films for solar cells using pulsed laser deposition (PLD) and pulsed electron deposition (PED). The aim was to deposit copper tin sulfide (CTS) and zinc sulfide (ZnS) by pulsed laser deposition to learn about these materials in relation to copper zinc tin...... time. We compared the results of CZTS deposition by PLD at DTU in Denmark to CZTS made by PED at IMEM-CNR, where CIGS solar cells have successfully been fabricated at very low processing temperatures. The main results of this work were as follows: Monoclinic-phase CTS films were made by pulsed laser...... deposition followed by high temperature annealing. The films were used to understand the double band gap that we and other groups observed in the material. The Cu-content of the CTS films varied depending on the laser fluence (the laser energy per pulse and per area). The material transfer from...

The effects of temperature, organic matter and time-dependency on rheological properties of dry anaerobic digested swine manure.

Science.gov (United States)

Liu, Gang-Jin; Liu, Yi; Wang, Zhi-Yong; Lei, Yun-Hui; Chen, Zi-Ai; Deng, Liang-Wei

2015-04-01

An efficient way to avoid the pollution of swine wastewater is the application of dry anaerobic digestion, which needs rheological parameter for stirring and pipe designing. The rheological properties of this kind of sludge have been studied for many decades, yet their effects only solid concentration has been investigated widely. In this paper, the influences of temperature, organic and time-dependency on the efficiency of anaerobic digested swine manure were studied. The viscosity decreased with temperature arranged from 10 to 60 °C which caused increase in protein from 7.18 to 8.49 g/kg. 60 °C can make the digested swine manure with TS from 16.6% to 21.5% reach to the same rheology state. The added peptone decreased the viscosity because of its function of water-reducing admixture and air entraining mixture. Time-dependent experiment showed the decrease of shear stress over time. The first and the second yield stress of dry anaerobic digested swine manure were evaluated through time-dependent model. Copyright © 2015 Elsevier Ltd. All rights reserved.

Time-Dependent Hartree-Fock Approach to Nuclear Pasta at Finite Temperature

International Nuclear Information System (INIS)

Schuetrumpf, B; Maruhn, J A; Klatt, M A; Mecke, K; Reinhard, P-G; Iida, K

2013-01-01

We present simulations of neutron-rich matter at subnuclear densities, like supernova matter, with the time-dependent Hartree-Fock approximation at temperatures of several MeV. The initial state consists of α particles randomly distributed in space that have a Maxwell-Boltzmann distribution in momentum space. Adding a neutron background initialized with Fermi distributed plane waves the calculations reflect a reasonable approximation of astrophysical matter. This matter evolves into spherical, rod-like, and slab-like shapes and mixtures thereof. The simulations employ a full Skyrme interaction in a periodic three-dimensional grid. By an improved morphological analysis based on Minkowski functionals, all eight pasta shapes can be uniquely identified by the sign of only two valuations, namely the Euler characteristic and the integral mean curvature.

Time-Dependent Hartree-Fock Approach to Nuclear Pasta at Finite Temperature

Science.gov (United States)

Schuetrumpf, B.; Klatt, M. A.; Iida, K.; Maruhn, J. A.; Mecke, K.; Reinhard, P.-G.

2013-03-01

We present simulations of neutron-rich matter at subnuclear densities, like supernova matter, with the time-dependent Hartree-Fock approximation at temperatures of several MeV. The initial state consists of α particles randomly distributed in space that have a Maxwell-Boltzmann distribution in momentum space. Adding a neutron background initialized with Fermi distributed plane waves the calculations reflect a reasonable approximation of astrophysical matter. This matter evolves into spherical, rod-like, and slab-like shapes and mixtures thereof. The simulations employ a full Skyrme interaction in a periodic three-dimensional grid. By an improved morphological analysis based on Minkowski functionals, all eight pasta shapes can be uniquely identified by the sign of only two valuations, namely the Euler characteristic and the integral mean curvature.

Strain dependent magnetic properties of LSMO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Prajapat, C.L.; Gupta, N.; Singh, M.R.; Mishra, P.K.; Gupta, S.K.; Ravikumar, G.; Bhattacharya, D.; Singh, Surendra; Basu, S.; Roul, B.K.

2014-01-01

Perovskite manganites exhibiting colossal magnetoresistance (CMR) are ideal candidates for growth of epitaxial multilayers with oxide high temperature superconductors owing to their structural similarity and comparable growth conditions. They are widely employed in studies on superconductor/ferromagnet-superlattices. Among the manganites, La 2/3 Sr 1/3 MnO 3 (LSMO) has one of the highest FM transition temperatures (above 300K). Magnetic properties of films that are dependent on strain (such as coercivity) can be tuned by varying deposition conditions, by using different substrates and varying thickness of films in nano range. Lattice mismatch between LSMO with STO and MgO substrates are 0.6% and 8% respectively. This mismatch produces tensile strain in LSMO films and changes its magnetic properties. We study the change in magnetic properties of epitaxial LSMO thin films on MgO (100) and STO (100) substrates with varying thickness to change the strain in the film. LSMO films are prepared by pulsed laser deposition

Deposition Time and Thermal Cycles of Fabricating Thin-wall Steel Parts by Double Electrode GMAW Based Additive Manufacturing

Directory of Open Access Journals (Sweden)

Yang Dongqing

2017-01-01

Full Text Available The deposition time for fabricating the thin-wall part as well as the peak temperature of the substrate during the process was analyzed in the double electrode gas metal arc welding (DE-GMAW based additive manufacturing (AM. The total deposition time and the interlayer idle time of the manufacturing process decreased with the increasing of the bypass current under the same interlayer temperature and the same deposition rate. The thermal cycling curves illustrated that the peak temperature of the substrate was lower in the DE-GMAW base AM under the same conditions. When depositing the thin-wall parts, the DE-GMAW based AM can reduce the heat input to the substrate and improve the fabrication efficiency, compared with the GMAW based AM.

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

International Nuclear Information System (INIS)

Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

2015-01-01

A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

The effect of post-treatment time and temperature on cerium-based conversion coatings on Al 2024-T3

Energy Technology Data Exchange (ETDEWEB)

Heller, Daimon K [Missouri University of Science and Technology, 101 Straumanis Hall, 401 West 16th Street, Rolla, MO 65409 (United States)], E-mail: dkhvwb@mst.edu; Fahrenholtz, William G. [Missouri University of Science and Technology, 101 Straumanis Hall, 401 West 16th Street, Rolla, MO 65409 (United States)], E-mail: billf@mst.edu; O' Keefe, Matthew J. [Missouri University of Science and Technology, 101 Straumanis Hall, 401 West 16th Street, Rolla, MO 65409 (United States)

2010-02-15

Corrosion performance, morphology, and electrochemical characteristics of cerium-based conversion coatings on Al 2024-T3 were examined as a function of phosphate post-treatment time and temperature. Corrosion resistance improved after post-treatment in 2.5 wt.% NH{sub 4}H{sub 2}PO{sub 4} for times up to 10 min or temperatures up to 85 deg. C. Electrochemical impedance spectroscopy and polarization testing correlated to neutral salt spray corrosion performance. Hydrated cerium oxide and peroxide species present in the as-deposited coatings were transformed to CePO{sub 4}.H{sub 2}O for post-treatments at longer times and/or higher temperatures. Based on these results, processes active during post-treatment are kinetically dependent and strongly influenced by the post-treatment time and temperature.

Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

Science.gov (United States)

Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

2017-05-01

In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

Science.gov (United States)

Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

1998-03-01

We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

Temperature dependence of grain boundary free energy and elastic constants

International Nuclear Information System (INIS)

Foiles, Stephen M.

2010-01-01

This work explores the suggestion that the temperature dependence of the grain boundary free energy can be estimated from the temperature dependence of the elastic constants. The temperature-dependent elastic constants and free energy of a symmetric Σ79 tilt boundary are computed for an embedded atom method model of Ni. The grain boundary free energy scales with the product of the shear modulus times the lattice constant for temperatures up to about 0.75 the melting temperature.

A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

Energy Technology Data Exchange (ETDEWEB)

Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

1990-01-01

The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

Temperature dependence of fluctuation time scales in spin glasses

DEFF Research Database (Denmark)

Kenning, Gregory G.; Bowen, J.; Sibani, Paolo

2010-01-01

Using a series of fast cooling protocols we have probed aging effects in the spin glass state as a function of temperature. Analyzing the logarithmic decay found at very long time scales within a simple phenomenological barrier model, leads to the extraction of the fluctuation time scale of the s...

Cathodic deposition of CdSe films from dimethyl formamide solution at optimized temperature

Energy Technology Data Exchange (ETDEWEB)

Datta, J. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India)]. E-mail: jayati_datta@rediffmail.com; Bhattacharya, C. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India); Visiting Research Associate, School of Materials Science and Engineering, UNSW (Australia); Bandyopadhyay, S. [School of Materials Science and Engineering, UNSW, Sydney 2052 (Australia)

2006-12-15

In the present paper, thin film CdSe compound semiconductors have been electroplated on transparent conducting oxide coated glass substrates from nonaqueous dimethyl formamide bath containing CdCl{sub 2}, KI and Se under controlled temperature ranging from 100 to 140 deg. C. Thickness of the deposited films as obtained through focussed ion beam technique as well as their microstructural and photoelectrochemical properties have been found to depend on temperature. The film growth was therefore optimized at a bath temperature {approx}125 deg. C. The formation of crystallites in the range of 100-150 nm size has been ascertained through atomic force microscopy and scanning electron microscopy. Energy dispersive analysis of X-rays for the as deposited film confirmed the 1:1 composition of CdSe compound in the matrix exhibiting band-gap energy of 1.74 eV. Microstructural properties of the deposited films have been determined through X-ray diffraction studies, high-resolution transmission electron microscopy and electron diffraction pattern analysis. Electrochemical impedance spectroscopy and current-potential measurements have been performed to characterize the electrochemical behavior of the semiconductor-electrolyte interface. The photo-activity of the films have been recorded in polysulphide solution under illumination and solar conversion efficiency {>=}1% was achieved.

Temperature dependence of the Faraday rotation for CdMnCoTe films

International Nuclear Information System (INIS)

Ahn, J. Y.; Tanaka, M.; Imamura, M.

2001-01-01

The temperature dependence of magneto-optical property in the visible wavelength region has been studied on four-element semimagnetic semiconductor CdMnCoTe films deposited on quartz glass substrates by using MBE equipment. A large dispersion of Faraday rotation was observed, and the peak of the Faraday rotation was shifted to the higher photon energies with increasing Mn concentration at low temperatures. At 180 K, the value of the Faraday rotation observed for the Cd 0.647 Mn 0.34 Co 0.013 Te film on quartz glass was -0.36 deg/cmG at 630 nm. It is equivalent to the value of -0.36 deg/cmG observed at 77 K for the Cd 0.52 Mn 0.48 Te film on quartz glass. At 77 K, the Faraday rotation observed for the Cd 0.647 Mn 0.34 Co 0.013 Te film on quartz glass was -0.49 deg/cmG at 610 nm. The value is approximately two times larger than that of the Cd 0.52 Mn 0.48 Te film deposited on the same quartz glass substrate. The origin of the enhancement of Faraday rotation in CdMnCoTe films has been discussed in terms of the magnetic susceptibility χ. [copyright] 2001 American Institute of Physics

Analytical Modelling and Optimization of the Temperature-Dependent Dynamic Mechanical Properties of Fused Deposition Fabricated Parts Made of PC-ABS

Science.gov (United States)

Mohamed, Omar Ahmed; Masood, Syed Hasan; Bhowmik, Jahar Lal

2016-01-01

Fused deposition modeling (FDM) additive manufacturing has been intensively used for many industrial applications due to its attractive advantages over traditional manufacturing processes. The process parameters used in FDM have significant influence on the part quality and its properties. This process produces the plastic part through complex mechanisms and it involves complex relationships between the manufacturing conditions and the quality of the processed part. In the present study, the influence of multi-level manufacturing parameters on the temperature-dependent dynamic mechanical properties of FDM processed parts was investigated using IV-optimality response surface methodology (RSM) and multilayer feed-forward neural networks (MFNNs). The process parameters considered for optimization and investigation are slice thickness, raster to raster air gap, deposition angle, part print direction, bead width, and number of perimeters. Storage compliance and loss compliance were considered as response variables. The effect of each process parameter was investigated using developed regression models and multiple regression analysis. The surface characteristics are studied using scanning electron microscope (SEM). Furthermore, performance of optimum conditions was determined and validated by conducting confirmation experiment. The comparison between the experimental values and the predicted values by IV-Optimal RSM and MFNN was conducted for each experimental run and results indicate that the MFNN provides better predictions than IV-Optimal RSM. PMID:28774019

Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO2/Si substrates

Directory of Open Access Journals (Sweden)

H. Omi

2012-03-01

Full Text Available The erbium silicate formation processes during annealing in Ar gas were monitored by synchrotron radiation grazing incidence X-ray diffraction (GIXD in real time and the optical properties of the silicates were investigated by photoluminescence measurements in spectral and time-resolved domains. The GIXD measurements show that erbium silicates and erbium oxide are formed by interface reactions between silicon oxide and erbium oxides deposited on silicon oxide by reactive sputtering in Ar gas and O2/Ar mixture gas ambiences. The erbium silicates are formed above 1060 °C in Ar gas ambience and above 1010 °C in O2/Ar gas ambience, and erbium silicides are dominantly formed above 1250 °C. The I15/2-I13/2 Er3+ photoluminescence from the erbium oxide and erbium silicate exhibits abnormal temperature dependence, which can be explained by the phonon-assisted resonant absorption of the 532-nm excitation photons into the 2H11/2 levels of Er3+ ions of the erbium compounds.

Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Hone, Fekadu Gashaw, E-mail: fekeye@gmail.com [Hawassa University, Department of Physics, Hawassa (Ethiopia); Ampong, Francis Kofi [Kwame Nkrumah University of Science and Technology, Department of Physics, Kumasi (Ghana)

2016-11-01

Lead selenide (PbSe) nanocrystalline thin films have been deposited on silica glass substrates by the chemical bath deposition technique. The samples were deposited at the bath temperatures of 60, 75 and 90 °C respectively and characterized by a variety of techniques. The XRD results revealed that the PbSe thin film deposited at 60 °C was amorphous in nature. Films deposited at higher temperatures exhibited sharp and intense diffraction peaks, indicating an improvement in crystallinety. The deposition temperature also had a strong influence on the preferred orientation of the crystallites as well as other structural parameters such as microstrain and dislocation density. From the SEM study it was observed that film deposited at 90 °C had well defined crystallites, uniformly distributed over the entire surface of the substrate. The EDAX study confirmed that the samples deposited at the higher temperature had a better stoichiometric ratio. The optical band gap varied from 2.26 eV to 1.13 eV with increasing deposition temperature. - Highlights: • The crystallinety of the films improved as the deposition temperature increased. • The deposition temperature strongly influenced the preferred orientations. • Microstrain and dislocation density are decreased linearly with deposition temperature. • Band gap decreased from 2.26 eV to 1.13 eV as the deposition temperature increased.

Study of temperature dependence and angular distribution of poly(9,9-dioctylfluorene) polymer films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

International Nuclear Information System (INIS)

Caricato, A.P.; Anni, M.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Tunno, T.; Valerini, D.

2009-01-01

Poly(9,9-dioctylfluorene) (PFO) polymer films were deposited by matrix-assisted pulsed laser evaporation (MAPLE) technique. The polymer was diluted (0.5 wt%) in tetrahydrofuran and, once cooled to liquid nitrogen temperature, it was irradiated with a KrF excimer laser. 10,000 laser pulses were used to deposit PFO films on Si substrates at different temperatures (-16, 30, 50 and 70 deg. C). One PFO film was deposited with 16,000 laser pulses at a substrate temperature of 50 deg. C. The morphology, optical and structural properties of the films were investigated by SEM, AFM, PL and FTIR spectroscopy. SEM inspection showed different characteristic features on the film surface, like deflated balloons, droplets and entangled polymer filaments. The roughness of the films was, at least partially, controlled by substrate heating, which however had the effect to reduce the deposition rate. The increase of the laser pulse number modified the target composition and increased the surface roughness. The angular distribution of the material ejected from the target confirmed the forward ejection of the target material. PFO films presented negligible modification of the chemical structure respect to the bulk material.

Time-dependent two-temperature chemically non-equilibrium modelling of high-power Ar-N2 pulse-modulated inductively coupled plasmas at atmospheric pressure

International Nuclear Information System (INIS)

Tanaka, Yasunori

2006-01-01

A time-dependent, two-dimensional, two-temperature and chemical non-equilibrium model was developed for high-power Ar-N 2 pulse-modulated inductively coupled plasmas (PMICPs) at atmospheric pressure. The high-power PMICP is a new technique for sustaining high-power induction plasmas. It can control the plasma temperature and radical densities in the time domain. The PMICP promotes non-equilibrium effects by a sudden application of electric field, even in the high-power density plasmas. The developed model accounts separately for the time-dependent energy conservation equations of electrons and heavy particles. This model also considers reaction heat effects and energy transfer between electrons and heavy particles as well as enthalpy flow resulting from diffusion caused by the particle density gradient. Chemical non-equilibrium effects are also taken into account by solving time-dependent mass conservation equations for each particle, considering diffusion, convection and net production terms resulting from 30 chemical reactions. Transport and thermodynamic properties of Ar-N 2 plasmas are calculated self-consistently using the first order approximation of the Chapman-Enskog method at each position and iteration using the local particle composition, heavy particle temperature and electron temperature. This model is useful to discuss time evolution in temperature, gas flow fields and distribution of chemical species

Ultras-stable Physical Vapor Deposited Amorphous Teflon Films with Extreme Fictive Temperature Reduction

Science.gov (United States)

McKenna, Gregory; Yoon, Heedong; Koh, Yung; Simon, Sindee

In the present work, we have produced highly stable amorphous fluoropolymer (Teflon AF® 1600) films to study the calorimetric and relaxation behavior in the deep in the glassy regime. Physical vapor deposition (PVD) was used to produce 110 to 700 nm PVD films with substrate temperature ranging from 0.70 Tg to 0.90 Tg. Fictive temperature (Tf) was measured using Flash DSC with 600 K/s heating and cooling rates. Consistent with prior observations for small molecular weight glasses, large enthalpy overshoots were observed in the stable amorphous Teflon films. The Tf reduction for the stable Teflon films deposited in the vicinity of 0.85 Tg was approximately 70 K compared to the Tgof the rejuvenated system. The relaxation behavior of stable Teflon films was measured using the TTU bubble inflation technique and following Struik's protocol in the temperature range from Tf to Tg. The results show that the relaxation time decreases with increasing aging time implying that devitrification is occurring in this regime.

Constitutive model with time-dependent deformations

DEFF Research Database (Denmark)

Krogsbøll, Anette

1998-01-01

are common in time as well as size. This problem is adressed by means of a new constitutive model for soils. It is able to describe the behavior of soils at different deformation rates. The model defines time-dependent and stress-related deformations separately. They are related to each other and they occur...... was the difference in time scale between the geological process of deposition (millions of years) and the laboratory measurements of mechanical properties (minutes or hours). In addition, the time scale relevant to the production history of the oil field was interesting (days or years)....

Catalytic Palladium Film Deposited by Scalable Low-Temperature Aqueous Combustion.

Science.gov (United States)

Voskanyan, Albert A; Li, Chi-Ying Vanessa; Chan, Kwong-Yu

2017-09-27

This article describes a novel method for depositing a dense, high quality palladium thin film via a one-step aqueous combustion process which can be easily scaled up. Film deposition of Pd from aqueous solutions by conventional chemical or electrochemical methods is inhibited by hydrogen embrittlement, thus resulting in a brittle palladium film. The method outlined in this work allows a direct aqueous solution deposition of a mirror-bright, durable Pd film on substrates including glass and glassy carbon. This simple procedure has many advantages including a very high deposition rate (>10 cm 2 min -1 ) and a relatively low deposition temperature (250 °C), which makes it suitable for large-scale industrial applications. Although preparation of various high-quality oxide films has been successfully accomplished via solution combustion synthesis (SCS) before, this article presents the first report on direct SCS production of a metallic film. The mechanism of Pd film formation is discussed with the identification of a complex formed between palladium nitrate and glycine at low temperature. The catalytic properties and stability of films are successfully tested in alcohol electrooxidation and electrochemical oxygen reduction reaction. It was observed that combustion deposited Pd film on a glassy carbon electrode showed excellent catalytic activity in ethanol oxidation without using any binder or additive. We also report for the first time the concept of a reusable "catalytic flask" as illustrated by the Suzuki-Miyaura cross-coupling reaction. The Pd film uniformly covers the inner walls of the flask and eliminates the catalyst separation step. We believe the innovative concept of a reusable catalytic flask is very promising and has the required features to become a commercial product in the future.

Influence of deposits quantity and air temperature on 137Cs accumulation by the higher mushrooms

International Nuclear Information System (INIS)

Zarubina, N.E.

2012-01-01

Researches of the influence of weather conditions (amount of precipitation, air temperature) on 137 Cs content magnitude in fruit bodies of mushrooms: Boletus edulis Bull.: Fr., Suillus luteus (L.: Fr.) S.F.Gray, Xerocomus badius (Fr.) Kuhn. ex Gilb., Tricholoma flavovirens (Pers.: Fr.) Lund., Cantharellus cibarius Fr. at the territory of Chernobyl alienation zone and 'southern trace are performed. Correlation factors, determination factors between specific activity 137 Cs at mushrooms and quantity of deposits (mm) and the maximum temperature of air ( o C) are calculated. At calculations the decrease of the content of 137 Cs in mushrooms at the expense of disintegration of this isotope has been considered. As a result of researches the authentic dependence of specific activity 137 Cs in fruit bodies of the studied kinds of mushrooms from quantity of deposits and from air temperature has not been established.

Time-temperature dependent variations in beta-carotene contents in carrot using different spectrophotometric techniques

Science.gov (United States)

Ullah, Rahat; Khan, Saranjam; Shah, Attaullah; Ali, Hina; Bilal, Muhammad

2018-05-01

The current study presents time dependent variations in the concentration of beta-carotene in carrot under different storage-temperature conditions using UV–VIS and Raman spectrophotometric techniques. The UV–VIS absorption spectra of beta-carotene extracted from carrot shows three distinct absorption peaks at 442, 467, and 500 nm with maximum absorption at 467 nm. These absorption peaks are very much reproducible and are assigned to β-carotene. Similarly, Raman spectra of carrot samples also confirmed the three main Raman peaks of beta-carotene at shift positions 1003, 1150, and 1515 cm‑1. An overall decrease in beta-carotene content has been observed for time-temperature conditions. These results depict a decrease of about 40% in the content of beta-carotene when carrot samples were stored in a refrigerator (4 °C) for the first 20 d, whereas a decrease of about 25% was observed when carrot samples were stored in a freezer (‑16 °C) for the same period. The objective of this study is to investigate the possible use of Raman spectroscopy and UV–VIS spectroscopy for quick and detailed analysis of changes (degradation) in beta-carotene content associated with time and temperature in storage (frozen foods) in order to promote quality foods for consumers. Future study with a greater focus on the concentration/content of beta-carotene in other fruits/vegetables is also desirable.

Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

International Nuclear Information System (INIS)

Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

2006-01-01

The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

Complete FDTD analysis of microwave heating processes in frequency-dependent and temperature dependent media

Energy Technology Data Exchange (ETDEWEB)

Torres, F.; Jecko, B. [Univ. de Limoges (France). Inst. de Recherche en Communications Optiques et Microondes

1997-01-01

It is well known that the temperature rise in a material modifies its physical properties and, particularly, its dielectric permittivity. The dissipated electromagnetic power involved in microwave heating processes depending on {var_epsilon}({omega}), the electrical characteristics of the heated media must vary with the temperature to achieve realistic simulations. In this paper, the authors present a fast and accurate algorithm allowing, through a combined electromagnetic and thermal procedure, to take into account the influence of the temperature on the electrical properties of materials. First, the temperature dependence of the complex permittivity ruled by a Debye relaxation equation is investigated, and a realistic model is proposed and validated. Then, a frequency-dependent finite-differences time-domain ((FD){sup 2}TD) method is used to assess the instantaneous electromagnetic power lost by dielectric hysteresis. Within the same iteration, a time-scaled form of the heat transfer equation allows one to calculate the temperature distribution in the heated medium and then to correct the dielectric properties of the material using the proposed model. These new characteristics will be taken into account by the EM solver at the next iteration. This combined algorithm allows a significant reduction of computation time. An application to a microwave oven is proposed.

Temperature dependence on the time and momentum spectra in germanium

International Nuclear Information System (INIS)

Schultz, P.J.; MacKenzie, I.K.

1982-01-01

Recent measurements using the slow-#betta# + beam at Brookhaven, have suggested a thermally activated trapping mechanism which inhibited positron diffusion in single-crystal Ge. Supporting evidence has now been obtained from both Doppler broadening and lifetime measurements but, in both cases, the temperature dependence was so weak that it required the use of dual digital stabilization and unusual statistical precision in both types of spectrometry. (Auth.)

An important role of temperature dependent scattering time in understanding the high temperature thermoelectric behavior of strongly correlated system: La0.75Ba0.25CoO3.

Science.gov (United States)

Singh, Saurabh; Kumar, Devendra; Pandey, Sudhir K

2017-03-15

In the present work, we report the temperature dependent thermopower (α) behavior of La 0.75 Ba 0.25 CoO 3 compound in the temperature range 300-600 K. Using the Heikes formula, the estimated value of α corresponding to high-spin configuration of Co 3+ and Co 4+ ions is found to be  ∼16 [Formula: see text], which is close to the experimental value, ∼13 [Formula: see text], observed at  ∼600 K. The temperature dependent TE behavior of the compound is studied by combining the WIEN2K and BoltzTrap code. The self consistency field calculations show that the compound have ferromagnetic ground state structure. The electronic structure calculations give half metallic characteristic with a small gap of  ∼50 meV for down spin channel. The large and positive value for down spin channel is obtained due to the unique band structure shown by this spin channel. The temperature dependent relaxation time for both the spin-channel charge carriers is considered to study the thermopower data in temperature range 300-600 K. For evaluation of α, almost linear values of [Formula: see text] and a non-linear values of [Formula: see text] are taken into account. By taking the temperature dependent values of relaxation time for both the spin channels, the calculated values of α using two current model are found to be in good agreement with experimental values in the temperature range 300-600 K. At 300 K, the calculated value of electrical conductivity by using the same value of relaxation time, i.e. 0.1 [Formula: see text] 10 -14 seconds for spin-up and [Formula: see text] seconds for spin-dn channel, is found to be equal to the experimentally reported value.

Influence of deposits quantity and air temperature on 137Cs accumulation by the higher mushrooms

Directory of Open Access Journals (Sweden)

N. E. Zarubina

2012-12-01

Full Text Available Researches of the influence of weather conditions (amount of precipitation, air temperature on 137Cs content’s magnitude in fruit bodies of mushrooms: Boletus edulis Bull.: Fr., Suillus luteus (L.: Fr. S.F.Gray, Xerocomus badius (Fr. Kuhn. ex Gilb., Tricholoma flavovirens (Pers.: Fr. Lund., Cantharellus cibarius Fr. at the territory of Chernobyl alienation zone and «southern trace» are performed. Correlation factors, determination factors between specific activity 137Cs at mushrooms and quantity of deposits (mm and the maximum temperature of air (0С are calculated. At calculations the decrease of the content of 137Cs in mushrooms at the expense of disintegration of this isotope has been considered. As a result of researches the authentic dependence of specific activity 137Cs in fruit bodies of the studied kinds of mushrooms from quantity of deposits and from air temperature has not been established.

Time-dependent Hartree-Fock approach to nuclear ``pasta'' at finite temperature

Science.gov (United States)

Schuetrumpf, B.; Klatt, M. A.; Iida, K.; Maruhn, J. A.; Mecke, K.; Reinhard, P.-G.

2013-05-01

We present simulations of neutron-rich matter at subnuclear densities, like supernova matter, with the time-dependent Hartree-Fock approximation at temperatures of several MeV. The initial state consists of α particles randomly distributed in space that have a Maxwell-Boltzmann distribution in momentum space. Adding a neutron background initialized with Fermi distributed plane waves the calculations reflect a reasonable approximation of astrophysical matter. This matter evolves into spherical, rod-like, and slab-like shapes and mixtures thereof. The simulations employ a full Skyrme interaction in a periodic three-dimensional grid. By an improved morphological analysis based on Minkowski functionals, all eight pasta shapes can be uniquely identified by the sign of only two valuations, namely the Euler characteristic and the integral mean curvature. In addition, we propose the variance in the cell density distribution as a measure to distinguish pasta matter from uniform matter.

Progress Report on Alloy 617 Time Dependent Allowables

Energy Technology Data Exchange (ETDEWEB)

Wright, Julie Knibloe [Idaho National Lab. (INL), Idaho Falls, ID (United States)

2015-06-01

Time dependent allowable stresses are required in the ASME Boiler and Pressure Vessel Code for design of components in the temperature range where time dependent deformation (i.e., creep) is expected to become significant. There are time dependent allowable stresses in Section IID of the Code for use in the non-nuclear construction codes, however, there are additional criteria that must be considered in developing time dependent allowables for nuclear components. These criteria are specified in Section III NH. St is defined as the lesser of three quantities: 100% of the average stress required to obtain a total (elastic, plastic, primary and secondary creep) strain of 1%; 67% of the minimum stress to cause rupture; and 80% of the minimum stress to cause the initiation of tertiary creep. The values are reported for a range of temperatures and for time increments up to 100,000 hours. These values are determined from uniaxial creep tests, which involve the elevated temperature application of a constant load which is relatively small, resulting in deformation over a long time period prior to rupture. The stress which is the minimum resulting from these criteria is the time dependent allowable stress St. In this report data from a large number of creep and creep-rupture tests on Alloy 617 are analyzed using the ASME Section III NH criteria. Data which are used in the analysis are from the ongoing DOE sponsored high temperature materials program, form Korea Atomic Energy Institute through the Generation IV VHTR Materials Program and historical data from previous HTR research and vendor data generated in developing the alloy. It is found that the tertiary creep criterion determines St at highest temperatures, while the stress to cause 1% total strain controls at low temperatures. The ASME Section III Working Group on Allowable Stress Criteria has recommended that the uncertainties associated with determining the onset of tertiary creep and the lack of significant

Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

International Nuclear Information System (INIS)

McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

1999-01-01

The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

Analytical Modelling and Optimization of the Temperature-Dependent Dynamic Mechanical Properties of Fused Deposition Fabricated Parts Made of PC-ABS

Directory of Open Access Journals (Sweden)

Omar Ahmed Mohamed

2016-11-01

Full Text Available Fused deposition modeling (FDM additive manufacturing has been intensively used for many industrial applications due to its attractive advantages over traditional manufacturing processes. The process parameters used in FDM have significant influence on the part quality and its properties. This process produces the plastic part through complex mechanisms and it involves complex relationships between the manufacturing conditions and the quality of the processed part. In the present study, the influence of multi-level manufacturing parameters on the temperature-dependent dynamic mechanical properties of FDM processed parts was investigated using IV-optimality response surface methodology (RSM and multilayer feed-forward neural networks (MFNNs. The process parameters considered for optimization and investigation are slice thickness, raster to raster air gap, deposition angle, part print direction, bead width, and number of perimeters. Storage compliance and loss compliance were considered as response variables. The effect of each process parameter was investigated using developed regression models and multiple regression analysis. The surface characteristics are studied using scanning electron microscope (SEM. Furthermore, performance of optimum conditions was determined and validated by conducting confirmation experiment. The comparison between the experimental values and the predicted values by IV-Optimal RSM and MFNN was conducted for each experimental run and results indicate that the MFNN provides better predictions than IV-Optimal RSM.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Temperature dependence of the work function of ruthenium-based gate electrodes

International Nuclear Information System (INIS)

Alshareef, H.N.; Wen, H.C.; Luan, H.F.; Choi, K.; Harris, H.R.; Senzaki, Y.; Majhi, P.; Lee, B.H.; Foran, B.; Lian, G.

2006-01-01

The effect of device fabrication temperature on the work function of ruthenium (Ru) metal gate and its bilayers was investigated. The work function shows strong temperature dependence when Ru electrodes are deposited on silicon oxide, SiO 2 , but not on hafnium silicates (HfSiO x ). Specifically, the work function of Ru on SiO 2 increased from 4.5 eV at 500 deg. C to 5.0 eV at 700 deg. C. On further annealing to 900 deg. C or higher, the work function dropped to about 4.4 eV. In the case of HfSiO x , the work function of Ru changed by less than 100 mV over the same temperature range. Identical temperature dependence was observed using hafnium (Hf)/Ru and tantalum (Ta)/Ru bilayers. However, the peak values of the work function decreased with increasing Hf/Ru and Ta/Ru thickness ratios. Materials analysis suggests that these trends are driven by interactions at the Ru metal gate-dielectric interface

Enhancement of deposition rate at cryogenic temperature in synchrotron radiation excited deposition of silicon film

International Nuclear Information System (INIS)

Nara, Yasuo; Sugita, Yoshihiro; Ito, Takashi; Kato, Hiroo; Tanaka, Ken-ichiro

1989-01-01

The authors have investigated the synchrotron radiation excited deposition of silicon films on the SiO 2 substrate by using SiH 4 /He mixture gas at BL-12C at Photon Factory. They used VUV light from the multilayer mirror with the center photon energy from 97 to 123eV, which effectively excites L-core electrons of silicon. Substrate temperature was widely varied from -178 degree C to 500 degree C. At -178 degree C, the deposition rate was as high as 400nm/200mAHr (normalized at the storage ring current at 200mA). As increasing the substrate temperature, the deposition rate was drastically decreased. The number of deposited silicon atoms is estimated to be 4 to 50% of incident photons, while the number of photo generated species in the gas phase within the mean free path from the surface is calculated as few as about 10 -3 of incident photons. These experimental results show that the deposition reaction is governed by the dissociation of surface adsorbates by the synchrotron radiation

Time-dependent electron temperature diagnostics for high-power aluminum z-pinch plasmas

International Nuclear Information System (INIS)

Sanford, T.W.L.; Nash, T.J.; Mock, R.C.

1996-08-01

Time-resolved x-ray pinhole photographs and time-integrated radially-resolved x-ray crystal-spectrometer measurements of azimuthally-symmetric aluminum-wire implosions suggest that the densest phase of the pinch is composed of a hot plasma core surrounded by a cooler plasma halo. The slope of the free-bound x-ray continuum, provides a time-resolved, model-independent diagnostic of the core electron temperature. A simultaneous measurement of the time-resolved K-shell line spectra provides the electron temperature of the spatially averaged plasma. Together, the two diagnostics support a 1-D Radiation-Hydrodynamic model prediction of a plasma whose thermalization on axis produces steep radial gradients in temperature, from temperatures in excess of a kilovolt in the core to below a kilovolt in the surrounding plasma halo

Evaluating the Properties of High-Temperature and Low-Temperature Wear of TiN Coatings Deposited at Different Temperatures

Directory of Open Access Journals (Sweden)

B. Khorrami Mokhori

2017-02-01

Full Text Available In this research titanium nitride (TiN films were prepared by plasma assisted chemical vapor deposition using TiCl4, H2, N2 and Ar on the AISI H13 tool steel. Coatings were deposited during different substrate temperatures (460°C, 480 ° C  and 510 °C. Wear tests were performed in order to study the acting wear mechanisms in the high(400 °C and low (25 °C temperatures by ball on disc method. Coating structure and chemical composition were characterized using scanning electron microscopy, microhardness and X-ray diffraction. Wear test result was described in ambient temprature according to wear rate. It was evidenced that the TiN coating deposited at 460 °C has the least weight loss with the highest hardness value. The best wear resistance was related to the coating with the highest hardness (1800 Vickers. Wear mechanisms were observed to change by changing wear temperatures. The result of wear track indicated that low-temprature wear has surface fatigue but high-temperature wear showed adhesive mechanism.

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

Impurities in chromium deposits produced by electroplating and physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Dini, J.W.

1994-05-01

Impurity contents in electrodeposited (hexavalent and trivalent) chromium deposits and physically vapor deposited (thermal evaporation, electron beam evaporation and rf-sputtering) were compared. Oxygen is the key impurity obtained in electrodeposited films but it can be minimized in hexavalent plating solutions by operating at high temperature, e. g., 85 C. Electrodeposits produced in trivalent chromium plating solutions and physically vapor deposited films have much higher oxygen contents than electrodeposits produced in hexavalent chromium solutions operated at temperatures around 85 C. Depending on the target material used for physically vapor deposited films, these films can also have high amounts of other impurities.

Towards a climate-dependent paradigm of ammonia emission and deposition

Energy Technology Data Exchange (ETDEWEB)

Sutton, M.A.; Reis, S.; Riddick, S.N.; Dragosits, U.; Nemitz, E.; Tang, Y.S.; Braban, C.F.; Vieno, M.; Dore, A.J.; Mitchell, R.F.; Wanless, S.; Daunt, F.; Fowler, D. [NERC Centre for Ecology and Hydrology Edinburgh, Bush Estate, Penicuik EH26 0QB (United Kingdom); Blackall, T.D. [Department of Geography, Strand Campus, Kings College London, London WC2R 2LS (United Kingdom); Theobald, M.R. [Higher Technical School of Agricultural Engineering, Technical University of Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Milford, C. [Izana Atmospheric Research Center, Meteorological State Agency of Spain (AEMET), Santa Cruz de Tenerife 38071 (Spain); Flechard, C.R. [INRA, Agrocampus Ouest, UMR 1069 SAS, 65 rue de St. Brieuc, 35042 Rennes Cedex (France); Loubet, B.; Massad, R.; Cellier, P.; Personne, E. [UMR INRA-AgroParisTech Environnement et Grandes Cultures, 78850 Thiverval-Grignon (France); Coheur, P.F.; Clarisse, L.; Van Damme, M.; Ngadi, Y. [Spectroscopie de l' atmosphere, Chimie Quantique et Photophysique, Universite Libre de Bruxelles (ULB), 50 avenue F. D. Roosevelt, 1050 Brussels (Belgium); Clerbaux, C. [Universite Paris 06, Universite Versailles-St. Quentin, UMR8190, CNRS/INSU, LATMOS-IPSL, Paris (France); Geels, C.; Hertel, O. [Department of Environmental Science, Aarhus University, P.O. Box 358, Frederiksborgvej 399, 4000 Roskilde (Denmark); Ambelas Skjoeth, C. [National Pollen and Aerobiology Research Unit, University of Worcester, Henwick Grove, Worcester WR2 6AJ (United Kingdom); Wichink Kruit, R.J. [TNO, Climate, Air and Sustainability, P.O. Box 80015, 3508 TA Utrecht (Netherlands); Pinder, R.W.; Bash, J.O.; Walker, J.T. [US Environmental Protection Agency, Office of Research and Development, Research Triangle Park, 109 T.W. Alexander Drive, Durham, NC 27711 (United States); Simpson, D. [Norwegian Meteorological Institute, EMEP MSC-W, P.O. Box 43-Blindern, 0313 Oslo (Norway); Horvath, L. [Plant Ecology Research Group of Hungarian Academy of Sciences, Institute of Botany and Ecophysiology, Szent Istvan University, Pater K. utca 1, 2100 Goedoello (Hungary); Misselbrook, T.H. [Rothamsted Research, Sustainable Soils and Grassland Systems, North Wyke, Okehampton EX20 2SB (United Kingdom); Bleeker, A. [Energy Research Centre of the Netherlands (ECN), P.O. Box 1, 1755 ZG Petten (Netherlands); Dentener, F. [European Commission, DG Joint Research Centre, via Enrico Fermi 2749, 21027 Ispra (Italy); De Vries, W. [Alterra, Wageningen University and Research Centre, Droevendaalsesteeg 4, 6708 PB Wageningen (Netherlands)

2013-07-15

Existing descriptions of bi-directional ammonia (NH3) land-atmosphere exchange incorporate temperature and moisture controls, and are beginning to be used in regional chemical transport models. However, such models have typically applied simpler emission factors to upscale the main NH3 emission terms. While this approach has successfully simulated the main spatial patterns on local to global scales, it fails to address the environment- and climate-dependence of emissions. To handle these issues, we outline the basis for a new modelling paradigm where both NH3 emissions and deposition are calculated online according to diurnal, seasonal and spatial differences in meteorology. We show how measurements reveal a strong, but complex pattern of climatic dependence, which is increasingly being characterized using ground-based NH3 monitoring and satellite observations, while advances in process-based modelling are illustrated for agricultural and natural sources, including a global application for seabird colonies. A future architecture for NH3 emission-deposition modelling is proposed that integrates the spatio-temporal interactions, and provides the necessary foundation to assess the consequences of climate change. Based on available measurements, a first empirical estimate suggests that 5{sup o}C warming would increase emissions by 42 per cent (28-67%). Together with increased anthropogenic activity, global NH3 emissions may increase from 65 (45-85) Tg N in 2008 to reach 132 (89-179) Tg by 2100.

Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

Science.gov (United States)

Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

1994-01-01

Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

Temperature-dependent luminescence dynamics in ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Priller, H. [Institut fuer Angewandte Physik, Universitaet Karlsruhe and Center for Functional Nanostructures (CFN), Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe (Germany)]. E-mail: heiko.priller@physik.uni-karlsruhe.de; Hauschild, R. [Institut fuer Angewandte Physik, Universitaet Karlsruhe and Center for Functional Nanostructures (CFN), Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe (Germany); Zeller, J. [Institut fuer Angewandte Physik, Universitaet Karlsruhe and Center for Functional Nanostructures (CFN), Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe (Germany); Klingshirn, C. [Institut fuer Angewandte Physik, Universitaet Karlsruhe and Center for Functional Nanostructures (CFN), Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe (Germany); Kalt, H. [Institut fuer Angewandte Physik, Universitaet Karlsruhe and Center for Functional Nanostructures (CFN), Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe (Germany); Kling, R. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert-Einstein Allee 45, 89081 Ulm (Germany); Reuss, F. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert-Einstein Allee 45, 89081 Ulm (Germany); Kirchner, Ch. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert-Einstein Allee 45, 89081 Ulm (Germany); Waag, A. [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig (Germany)

2005-04-15

We report on an experimental study of the temporal photoluminescence dynamics of high-quality ZnO nanopillars from 10 K to room temperature. We find that defect states play an important role in the time evolution of the photoluminescence signal. At low excitation intensities capture into defects dominates the time dependence of the PL, at higher intensities they are saturated and the intrinsic excitation decay is observed. We separate the intrinsic exciton decay from the fast nonlinear M-band with the method of decay associated spectra and obtain the temperature dependence of the intrinsic exciton decay. High excitation measurements show a reduced exciton-exciton scattering in these thin nanorods.

Frequency and temperature dependence of ferromagnetic linewidth in exchange biased Permalloy

International Nuclear Information System (INIS)

Lubitz, P.; Rubinstein, M.; Krebs, J. J.; Cheng, S.-F.

2001-01-01

Ferromagnetic resonance linewidths were measured at 9.5 and 35 GHz and in the temperature range from 77 to 350 K for thin Permalloy (Py) films exchange biased by adjacent layers of NiO, CoO, or IrMn. Compared to unoxidized Py alone, for which the linewidth is nearly temperature independent in this range and scales linearly with frequency, exchange biased Py has broader lines with distinctive temperature dependences for each bias material at 9.5 GHz. Different temperature dependences were observed at 35 GHz. Our results are consistent with relaxation related to thermally driven reversal of the antiferromagnetic grains. Intrinsic damping and inhomogeneities also add to the widths. The qualitative features of the temperature and frequency dependences of the linewidths can be described with the usual expression for the slow relaxation linewidth mechanism. The temperature dependence of the relaxation time is taken from Neel's expression for the reversal time using appropriate rate prefactors and activation energies. [copyright] 2001 American Institute of Physics

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

Science.gov (United States)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Definition of Time Induction of Self-Ignition of the Substance on the Prognostic Extrapolation Depending on the Basis of Indicators Fire and Explosion Hazard

International Nuclear Information System (INIS)

Sechin, A; Kyrmakova, O; Osipenko, S

2016-01-01

In this article the research directed on development of a technique of definition of time of induction of the self-ignition of substances and materials which is an indicator of the beginning of development of an emergency is conducted. The experiment consisting in supervision over process of self-ignition of coal and oil deposits was the basis for research. On the basis of experimental data the curve expressing analytic - expected dependence of size of temperature of ignition on induction time was constructed. Proceeding from graphical representation of process, functional dependence of time of induction on a temperature indicator was received: y = 16920 • x 0 537 . By means of known indicators of such substances as bitumen oil oxidized (the combustible solid substance received by oxidation of residual product of oil refining) and tar oil (the combustible solid substance which is residual product of oil refining) and the received algorithm, verification of reliability of the received dependence and a technique of definition of time of induction of spontaneous ignition of deposits of oil in general was carried out. The practical importance of the conducted research is that having data on time of induction of process of self-ignition, by means of preventive measures becomes possible to avoid and prevent accidents in oil and oil processing branches, at the same time loss of property and loss of human life. (paper)

Deposition temperature influence on sputtered nanogranular magnetoresistive composites

International Nuclear Information System (INIS)

Mujika, M.; Arana, S.; Castano, E.

2007-01-01

Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

Dependence of the surface resistance of niobium coated copper cavities on the coating temperature

International Nuclear Information System (INIS)

Darriulat, P.; Durand, C.; Janot, P.; Rensing, N.; Weingarten, W.; Bosland, P.; Gobin, J.; Martignac, J.

1996-01-01

Six hydro-formed copper 1.5 GHz cavities have been baked and coated with niobium at different temperatures between 100 deg C and 200 deg C, while keeping the other discharge parameters unchanged. Their surface resistance has been measured as a function RF field and trapped magnetic field. Its dependence on deposition temperature confirms earlier indications obtained using 350 MHz LEP cavities that 150 deg C leads to optimal performances. The critical temperatures of Nb/Cu and bulk niobium cavities have also been measured. (author)

Time-temperature superposition in viscous liquids

DEFF Research Database (Denmark)

Olsen, Niels Boye; Dyre, Jeppe; Christensen, Tage Emil

2001-01-01

with a reduced time definition based on a recently proposed expression for the relaxation time, where G [infinity] reflects the fictive temperature. All parameters entering the reduced time were determined from independent measurements of the frequency-dependent shear modulus of the equilibrium liquid....

Temperature-dependent photoluminescence from CdS/Si nanoheterojunctions

Energy Technology Data Exchange (ETDEWEB)

Song, Yue Li; Li, Yong; Ji, Peng Fei; Zhou, Feng Qun; Sun, Xiao Jun; Yuan, Shu Qing; Wan, Ming Li [Pingdingshan University, Department of Physics, Solar New Energy Research Center, Pingdingshan (China); Ling, Hong [North China University of Water Resources and Electric Power, Department of Mathematics and Information Science, Zhengzhou (China)

2016-12-15

CdS/Si nanoheterojunctions have been fabricated by growing nanocrystal CdS (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) through using a chemical bath deposition method. The nanoheterojunctions have been constructed by three layers: the upper layer being a nc-CdS thin films, the intermediate layer being the interface region including nc-CdS and nanocrystal silicon (nc-Si), and the bottom layer being nc-Si layer grown on sc-Si substrate. The room temperature and temperature-dependent photoluminescence (PL) have been measured and analyzed to provide some useful information of defect states. Utilizing the Gauss-Newton fitting method, five emission peaks from the temperature-dependent PL spectra can be determined. From the high energy to low energy, these five peaks are ascribed to the some luminescence centers which are formed by the oxygen-related deficiency centers in the silicon oxide layer of Si-NPA, the band gap emission of nc-CdS, the transition from the interstitial cadmium (I{sub Cd}) to the valence band, the recombination from I{sub Cd} to cadmium vacancies (V{sub Cd}), and from sulfur vacancies (V{sub s}) to the valence band, respectively. Understanding of the defect states in the CdS/Si nanoheterojunctions is very meaningful for the performance of devices based on CdS/Si nanoheterojunctions. (orig.)

Time-dependent fracture of materials at elevated temperature for solar thermal power systems

International Nuclear Information System (INIS)

Gupta, G.D.

1979-01-01

Various Solar Thermal Power Systems are briefly described. The components of solar power systems in which time-dependent fracture problems become important are identified. Typical materials of interest, temperature ranges, and stress states are developed; and the number of cycles during the design life of these systems are indicated. The ASME Code procedures used by designers to predict the life of these components are briefly described. Some of the major problems associated with the use of these ASME procedures in the design of solar components are indicated. Finally, a number of test and development needs are identified which would enable the designers to predict the life of the solar power system components with a reasonable degree of confidence

Real time monitoring of filament-assisted chemically vapor deposited diamond by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Yue Cong; An, I.; Vedam, K.; Collins, R.W.; Nguyen, H.V.; Messier, R.

1991-01-01

Spectroscopic ellipsometry over the range 1.5-4.5 eV was applied as a real time probe of the processes occurring in the initial nucleation of thin film diamond by heated-filament assisted chemical vapor deposition. Using both untreated and diamond-polished c-Si substrates, as well as both carburized and uncarburized tungsten filaments, it was possible to separate and characterize competing phenomena, including the increase in surface temperature induced by filament ignition, the formation of carbide layers, contamination of the substrate by tungsten from the filament, annealing of diamond polishing damage, and, finally, diamond nucleation. An accurate measurement of the true temperature of the substrate surface averaged over the top 500 A can be obtained from the energy position of critical points in the c-Si band structure. For diamond deposition, we operated with an initial excess flow of CH 4 to stimulate nucleation. We applied real time feedback and manual control to reduce the CH 4 flow in the first monolayers of deposition. The thickness of diamond and an estimate of its nucleation density can be obtained from real time spectra, and the latter was in good agreement with that obtained from scanning electron microscopy. (orig.)

High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

Directory of Open Access Journals (Sweden)

N. Badi

2015-12-01

Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

Time Resolved Deposition Measurements in NSTX

International Nuclear Information System (INIS)

Skinner, C.H.; Kugel, H.; Roquemore, A.L.; Hogan, J.; Wampler, W.R.

2004-01-01

Time-resolved measurements of deposition in current tokamaks are crucial to gain a predictive understanding of deposition with a view to mitigating tritium retention and deposition on diagnostic mirrors expected in next-step devices. Two quartz crystal microbalances have been installed on NSTX at a location 0.77m outside the last closed flux surface. This configuration mimics a typical diagnostic window or mirror. The deposits were analyzed ex-situ and found to be dominantly carbon, oxygen, and deuterium. A rear facing quartz crystal recorded deposition of lower sticking probability molecules at 10% of the rate of the front facing one. Time resolved measurements over a 4-week period with 497 discharges, recorded 29.2 (micro)g/cm 2 of deposition, however surprisingly, 15.9 (micro)g/cm 2 of material loss occurred at 7 discharges. The net deposited mass of 13.3 (micro)g/cm 2 matched the mass of 13.5 (micro)g/cm 2 measured independently by ion beam analysis. Monte Carlo modeling suggests that transient processes are likely to dominate the deposition

Improving Erosion Resistance of Plasma-Sprayed Ceramic Coatings by Elevating the Deposition Temperature Based on the Critical Bonding Temperature

Science.gov (United States)

Yao, Shu-Wei; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2018-01-01

Interlamellar bonding within plasma-sprayed coatings is one of the most important factors dominating the properties and performance of coatings. The interface bonding between lamellae significantly influences the erosion behavior of plasma-sprayed ceramic coatings. In this study, TiO2 and Al2O3 coatings with different microstructures were deposited at different deposition temperatures based on the critical bonding temperature concept. The erosion behavior of ceramic coatings was investigated. It was revealed that the coatings prepared at room temperature exhibit a typical lamellar structure with numerous unbonded interfaces, whereas the coatings deposited at the temperature above the critical bonding temperature present a dense structure with well-bonded interfaces. The erosion rate decreases sharply with the improvement of interlamellar bonding when the deposition temperature increases to the critical bonding temperature. In addition, the erosion mechanisms of ceramic coatings were examined. The unbonded interfaces in the conventional coatings act as pre-cracks accelerating the erosion of coatings. Thus, controlling interlamellar bonding formation based on the critical bonding temperature is an effective approach to improve the erosion resistance of plasma-sprayed ceramic coatings.

Deposition and high temperature corrosion in a 10 MW straw

DEFF Research Database (Denmark)

Michelsen, Hanne Philbert; Frandsen, Flemming; Dam-Johansen, Kim

1998-01-01

Deposition and corrosion measurements were conducted at a 10 MW wheat straw fired stoker boiler used for combined power and heat production. The plant experiences major problems with deposits on the heat transfer surfaces, and test probes have shown enhanced corrosion due to selective corrosion...... for metal temperatures above 520 C. Deposition measurements carried out at a position equal to the secondary superheater showed deposits rich in potassium and chlorine and to a lesser extent in silicon, calcium, and sulfur. Potassium and chlorine make up 40-80 wt% of the deposits. Mechanisms of deposit...

(Alpha-) quenching temperature dependence in liquid scintillator

Energy Technology Data Exchange (ETDEWEB)

Soerensen, Arnd; Lozza, Valentina; Krosigk, Belina von; Zuber, Kai [Institut fuer Kern- und Teilchenphysik, TU Dresden (Germany)

2015-07-01

Liquid scintillator (LS) is an effective and promising detector material, which is and will be used by many small and large scale experiments. In order to perform correct signal identification and background suppression, a very good knowledge of LS properties is crucial. One of those is the light yield from alpha particles in liquid scintillator. This light output strongly quenched, approx. 10 times compared to that of electrons, and has been precisely studied at room temperature for various LS. Big scintillator experiments, such as SNO+ and maybe future large scale detectors, will operate at different temperatures. While a strong temperature dependence is well known for solid state scintillators, due to the different scintillation process, a quenching temperature dependence in LS is usually assumed negligible. On the other hand, inconsistencies in between measurements are often explained by potential temperature effects. This study investigates LAB based liquid scintillator with an intrinsic, dissolved alpha emitter and its behaviour with temperature change. In a small, cooled and heated setup, a stabilized read-out with two PMTs is realised. First results are presented.

BINARY: an optical freezing array for assessing temperature and time dependence of heterogeneous ice nucleation

Directory of Open Access Journals (Sweden)

C. Budke

2015-02-01

Full Text Available A new optical freezing array for the study of heterogeneous ice nucleation in microliter-sized droplets is introduced, tested and applied to the study of immersion freezing in aqueous Snomax® suspensions. In the Bielefeld Ice Nucleation ARraY (BINARY ice nucleation can be studied simultaneously in 36 droplets at temperatures down to −40 °C (233 K and at cooling rates between 0.1 and 10 K min−1. The droplets are separated from each other in individual compartments, thus preventing a Wegener–Bergeron–Findeisen type water vapor transfer between droplets as well as avoiding the seeding of neighboring droplets by formation and surface growth of frost halos. Analysis of freezing and melting occurs via an automated real-time image analysis of the optical brightness of each individual droplet. As an application ice nucleation in water droplets containing Snomax® at concentrations from 1 ng mL−1 to 1 mg mL−1 was investigated. Using different cooling rates, a small time dependence of ice nucleation induced by two different classes of ice nucleators (INs contained in Snomax® was detected and the corresponding heterogeneous ice nucleation rate coefficient was quantified. The observed time dependence is smaller than those of other types of INs reported in the literature, suggesting that the BINARY setup is suitable for quantifying time dependence for most other INs of atmospheric interest, making it a useful tool for future investigations.

BINARY: an optical freezing array for assessing temperature and time dependence of heterogeneous ice nucleation

Science.gov (United States)

Budke, C.; Koop, T.

2015-02-01

A new optical freezing array for the study of heterogeneous ice nucleation in microliter-sized droplets is introduced, tested and applied to the study of immersion freezing in aqueous Snomax® suspensions. In the Bielefeld Ice Nucleation ARraY (BINARY) ice nucleation can be studied simultaneously in 36 droplets at temperatures down to -40 °C (233 K) and at cooling rates between 0.1 and 10 K min-1. The droplets are separated from each other in individual compartments, thus preventing a Wegener-Bergeron-Findeisen type water vapor transfer between droplets as well as avoiding the seeding of neighboring droplets by formation and surface growth of frost halos. Analysis of freezing and melting occurs via an automated real-time image analysis of the optical brightness of each individual droplet. As an application ice nucleation in water droplets containing Snomax® at concentrations from 1 ng mL-1 to 1 mg mL-1 was investigated. Using different cooling rates, a small time dependence of ice nucleation induced by two different classes of ice nucleators (INs) contained in Snomax® was detected and the corresponding heterogeneous ice nucleation rate coefficient was quantified. The observed time dependence is smaller than those of other types of INs reported in the literature, suggesting that the BINARY setup is suitable for quantifying time dependence for most other INs of atmospheric interest, making it a useful tool for future investigations.

Temperature dependence of the thermal expansion of neutron-irradiated pyrolytic carbon and graphite

International Nuclear Information System (INIS)

Matsuo, Hideto

1988-01-01

The effects of neutron irradiation and annealing on the temperature dependence of the linear thermal expansion of pyrolytic carbon and graphite were investigated after irradiation at 930-1280 0 C to a maximum neutron fluence of 2.84 x 10 25 m -2 (E > 29 fJ). After irradiation, little change in the thermal expansion of pyrolytic graphite was observed. However, as-deposited pyrolytic carbon showed an increase in thermal expansion in the perpendicular direction, a decrease in the direction parallel to the deposition plane, and also an increase in the anisotropy of the thermal expansion. Annealing at 2000 0 C did not cause any effective changes for irradiated specimens of either as-deposited pyrolytic carbon or pyrolytic graphite. (author)

Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

Science.gov (United States)

Kumar, Ankit; Pan, Fan; Husain, Sajid; Akansel, Serkan; Brucas, Rimantas; Bergqvist, Lars; Chaudhary, Sujeet; Svedlindh, Peter

2017-12-01

Half-metallicity and low magnetic damping are perpetually sought for spintronics materials, and full Heusler compounds in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler compound thin films, and theory has struggled to establish a fundamental understanding of the temperature-dependent Gilbert damping in these systems. Here we present a study of the temperature-dependent Gilbert damping of differently ordered as-deposited Co2FeAl full Heusler compound thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states governs the Gilbert damping for the well-ordered phase, in contrast to the damping of partially ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room-temperature intrinsic damping observed for the well-ordered phase, provide fundamental insights into the physical origin of the Gilbert damping in full Heusler compound thin films.

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Science.gov (United States)

Rosales, Daniel; Gil, Bernard; Monavarian, Morteza; Zhang, Fan; Okur, Serdal; Izyumskaya, Natalia; Avrutin, Vitaliy; Özgür, Ümit; Morkoç, Hadis

2015-03-01

We studied the temperature dependence and the recombination dynamics of the photoluminescence of (1-101)-oriented semi-polar Al0.2Ga0.8N/GaN multiple quantum wells (MQW). The polarized low-temperature PL measurements reveal that radiative recombination exhibit an anisotropic behavior. The PL intensity at room temperature is reduced by one order of magnitude with respect to low temperature. The radiative decay time exhibits a mixed behavior: it is roughly constant between 8K to ranging near 140-150K and then rapidly increases with a slope of 10 ps.K-1. This behavior is indicative of coexistence of localized excitons and free excitons which relative proportion are statistically computed.

The Temperature Condition of the Plate with Temperature-Dependent Thermal Conductivity and Energy Release

Directory of Open Access Journals (Sweden)

V. S. Zarubin

2016-01-01

Full Text Available The temperature state of a solid body, in addition to the conditions of its heat exchange with the environment, can greatly depend on the heat release (or heat absorption processes within the body volume. Among the possible causes of these processes should be noted such as a power release in the fuel elements of nuclear reactors, exothermic or endothermic chemical reactions in the solid body material, which respectively involve heat release or absorbtion, heat transfer of a part of the electric power in the current-carrying conductors (so-called Joule’s heat or the energy radiation penetrating into the body of a semitransparent material, etc. The volume power release characterizes an intensity of these processes.The extensive list of references to the theory of heat conductivity of solids offers solutions to problems to determine a stationary (steady over time and non-stationary temperature state of the solids (as a rule, of the canonical form, which act as the sources of volume power release. Thus, in general case, a possibility for changing power release according to the body volume and in solving the nonstationary problems also a possible dependence of this value on the time are taken into consideration.However, in real conditions the volume power release often also depends on the local temperature, and such dependence can be nonlinear. For example, with chemical reactions the intensity of heat release or absorption is in proportion to their rate, which, in turn, is sensitive to the temperature value, and a dependence on the temperature is exponential. A further factor that in such cases makes the analysis of the solid temperature state complicated, is dependence on the temperature and the thermal conductivity of this body material, especially when temperature distribution therein  is significantly non-uniform. Taking into account the influence of these factors requires the mathematical modeling methods, which allow us to build an adequate

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

International Nuclear Information System (INIS)

Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

Energy Technology Data Exchange (ETDEWEB)

Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

International Nuclear Information System (INIS)

Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

2011-01-01

Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

Dynamic compensation temperatures in a mixed spin-1 and spin-3/2 Ising system under a time-dependent oscillating magnetic field

Energy Technology Data Exchange (ETDEWEB)

Keskin, Mustafa, E-mail: keskin@erciyes.edu.t [Department of Physics, Erciyes University, 38039 Kayseri (Turkey); Kantar, Ersin [Institute of Science, Erciyes University, 38039 Kayseri (Turkey)

2010-09-15

We study the existence of dynamic compensation temperatures in the mixed spin-1 and spin-3/2 Ising ferrimagnetic system Hamiltonian with bilinear and crystal-field interactions in the presence of a time-dependent oscillating external magnetic field on a hexagonal lattice. We employ the Glauber transitions rates to construct the mean-field dynamic equations. We investigate the time dependence of an average sublattice magnetizations, the thermal behavior of the dynamic sublattice magnetizations and the total magnetization. From these studies, we find the phases in the system, and characterize the nature (continuous or discontinuous) of transitions as well as obtain the dynamic phase transition (DPT) points and the dynamic compensation temperatures. We also present dynamic phase diagrams, including the compensation temperatures, in the five different planes. A comparison is made with the results of the available mixed spin Ising systems.

Dynamic compensation temperatures in a mixed spin-1 and spin-3/2 Ising system under a time-dependent oscillating magnetic field

International Nuclear Information System (INIS)

Keskin, Mustafa; Kantar, Ersin

2010-01-01

We study the existence of dynamic compensation temperatures in the mixed spin-1 and spin-3/2 Ising ferrimagnetic system Hamiltonian with bilinear and crystal-field interactions in the presence of a time-dependent oscillating external magnetic field on a hexagonal lattice. We employ the Glauber transitions rates to construct the mean-field dynamic equations. We investigate the time dependence of an average sublattice magnetizations, the thermal behavior of the dynamic sublattice magnetizations and the total magnetization. From these studies, we find the phases in the system, and characterize the nature (continuous or discontinuous) of transitions as well as obtain the dynamic phase transition (DPT) points and the dynamic compensation temperatures. We also present dynamic phase diagrams, including the compensation temperatures, in the five different planes. A comparison is made with the results of the available mixed spin Ising systems.

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

International Nuclear Information System (INIS)

Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

2016-01-01

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)] 2 /FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T A =200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T A ≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T A =300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T A and temperature. A large reduction in coercivity (H C ) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H C (T), i.e., a broad minimum in H C (T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H C (T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T C ) with T A (x). The multilayer films annealed at 200 °C exhibit low value of T C with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T C with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces. - Highlights: • Preparation and

Temperature dependency of external stress corrosion crack propagation of 304 stainless steel

International Nuclear Information System (INIS)

Hayashibara, Hitoshi; Mizutani, Yoshihiro; Mayuzumi, Masami; Tani, Jun-ichi

2010-01-01

Temperature dependency of external stress corrosion cracking (ESCC) of 304 stainless steel was examined with CT specimens. Maximum ESCC propagation rates appeared in the early phase of ESCC propagation. ESCC propagation rates generally became smaller as testing time advance. Temperature dependency of maximum ESCC propagation rate was analyzed with Arrhenius plot, and apparent activation energy was similar to that of SCC in chloride solutions. Temperature dependency of macroscopic ESCC incubation time was different from that of ESCC propagation rate. Anodic current density of 304 stainless steel was also examined by anodic polarization measurement. Temperature dependency of critical current density of active state in artificial sea water solution of pH=1.3 was similar to that of ESCC propagation rate. (author)

Short review on chemical bath deposition of thin film and characterization

Energy Technology Data Exchange (ETDEWEB)

Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

2016-05-06

This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

Towards a climate-dependent paradigm of ammonia emission and deposition

Science.gov (United States)

Sutton, Mark A.; Reis, Stefan; Riddick, Stuart N.; Dragosits, Ulrike; Nemitz, Eiko; Theobald, Mark R.; Tang, Y. Sim; Braban, Christine F.; Vieno, Massimo; Dore, Anthony J.; Mitchell, Robert F.; Wanless, Sarah; Daunt, Francis; Fowler, David; Blackall, Trevor D.; Milford, Celia; Flechard, Chris R.; Loubet, Benjamin; Massad, Raia; Cellier, Pierre; Personne, Erwan; Coheur, Pierre F.; Clarisse, Lieven; Van Damme, Martin; Ngadi, Yasmine; Clerbaux, Cathy; Skjøth, Carsten Ambelas; Geels, Camilla; Hertel, Ole; Wichink Kruit, Roy J.; Pinder, Robert W.; Bash, Jesse O.; Walker, John T.; Simpson, David; Horváth, László; Misselbrook, Tom H.; Bleeker, Albert; Dentener, Frank; de Vries, Wim

2013-01-01

Existing descriptions of bi-directional ammonia (NH3) land–atmosphere exchange incorporate temperature and moisture controls, and are beginning to be used in regional chemical transport models. However, such models have typically applied simpler emission factors to upscale the main NH3 emission terms. While this approach has successfully simulated the main spatial patterns on local to global scales, it fails to address the environment- and climate-dependence of emissions. To handle these issues, we outline the basis for a new modelling paradigm where both NH3 emissions and deposition are calculated online according to diurnal, seasonal and spatial differences in meteorology. We show how measurements reveal a strong, but complex pattern of climatic dependence, which is increasingly being characterized using ground-based NH3 monitoring and satellite observations, while advances in process-based modelling are illustrated for agricultural and natural sources, including a global application for seabird colonies. A future architecture for NH3 emission–deposition modelling is proposed that integrates the spatio-temporal interactions, and provides the necessary foundation to assess the consequences of climate change. Based on available measurements, a first empirical estimate suggests that 5°C warming would increase emissions by 42 per cent (28–67%). Together with increased anthropogenic activity, global NH3 emissions may increase from 65 (45–85) Tg N in 2008 to reach 132 (89–179) Tg by 2100. PMID:23713128

Synthesis of Nanocrystalline SnOx (x = 1–2 Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

Directory of Open Access Journals (Sweden)

Zulkarnain Zainal

2011-09-01

Full Text Available Nanocrystalline SnOx (x = 1–2 thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light.

Ice formation via deposition nucleation on mineral dust and organics: dependence of onset relative humidity on total particulate surface area

International Nuclear Information System (INIS)

Kanji, Zamin A; Florea, Octavian; Abbatt, Jonathan P D

2008-01-01

We present ice nucleation results for Arizona test dust, kaolinite, montmorillonite, silica, silica coated with a hydrophobic octyl chain, oxalic acid dihydrate, Gascoyne leonardite (a humic material), and Aldrich humic acid (sodium salt). The focus was on deposition mode nucleation below water saturation at 233 K. Particles were deposited onto a hydrophobic cold stage by atomization of a slurry/solution and exposed to a constant partial pressure of water vapor. By lowering the temperature of the stage, the relative humidity with respect to ice (RH i ) was gradually increased until ice nucleation was observed using digital photography. Different numbers of particles were deposited onto the cold stage by varying the atomization solution concentration and deposition time. For the same total particulate surface area, mineral dust particles nucleated ice at lower supersaturations than all other materials. The most hydrophobic materials, i.e. Gascoyne leonardite and octyl silica, were the least active. For our limit of detection of one ice crystal, the ice onset RH i values were dependent on the total surface area of the particulates, indicating that no unique threshold RH i for ice nucleation prevails

Ice formation via deposition nucleation on mineral dust and organics: dependence of onset relative humidity on total particulate surface area

Energy Technology Data Exchange (ETDEWEB)

Kanji, Zamin A; Florea, Octavian; Abbatt, Jonathan P D [Department of Chemistry, University of Toronto, 80 St George Street, Toronto, ON, M5S 3H6 (Canada)], E-mail: zkanji@chem.utoronto.ca

2008-04-15

We present ice nucleation results for Arizona test dust, kaolinite, montmorillonite, silica, silica coated with a hydrophobic octyl chain, oxalic acid dihydrate, Gascoyne leonardite (a humic material), and Aldrich humic acid (sodium salt). The focus was on deposition mode nucleation below water saturation at 233 K. Particles were deposited onto a hydrophobic cold stage by atomization of a slurry/solution and exposed to a constant partial pressure of water vapor. By lowering the temperature of the stage, the relative humidity with respect to ice (RH{sub i}) was gradually increased until ice nucleation was observed using digital photography. Different numbers of particles were deposited onto the cold stage by varying the atomization solution concentration and deposition time. For the same total particulate surface area, mineral dust particles nucleated ice at lower supersaturations than all other materials. The most hydrophobic materials, i.e. Gascoyne leonardite and octyl silica, were the least active. For our limit of detection of one ice crystal, the ice onset RH{sub i} values were dependent on the total surface area of the particulates, indicating that no unique threshold RH{sub i} for ice nucleation prevails.

Temperature dependence of optical properties in Nd/Cr:YAG materials

International Nuclear Information System (INIS)

Honda, Yoshiyuki; Motokoshi, Shinji; Jitsuno, Takahisa; Miyanaga, Noriaki; Fujioka, Kana; Nakatsuka, Masahiro; Yoshida, Minoru

2014-01-01

The energy transfer from Cr 3+ to Nd 3+ for Nd/Cr:YAG (Nd: 1.0%, Cr: 2.0%) materials was investigated by measuring the temperature dependences of fluorescence characteristics. The fluorescence intensity of Nd 3+ increased with temperature owing to enhancement of the absorption coefficient of Cr 3+ . The energy transfer efficiency was constant from 77 to 450 K. The energy transfer time decreased with increasing temperature. -- Highlights: • We investigate the energy transfer from Cr 3+ to Nd 3+ in Nd/Cr:YAG materials by measuring the temperature dependence of fluorescence characteristics. • The fluorescence intensity of Nd 3+ increased with temperature owing to enhancement of the absorption coefficient of Cr 3+ . • The energy transfer efficiency was constant from 77 to 450 K. • The energy transfer time decreased with increasing temperature. • Nd/Cr:YAG ceramics pumped by a flash lamp would not only provide high conversion efficiency, but can also be expected to function as an effective laser operating at high temperature

Constitutive modeling for uniaxial time-dependent ratcheting of SS304 stainless steel

International Nuclear Information System (INIS)

Kan Qianhua; Kang Guozheng; Zhang Juan

2007-01-01

Based on the experimental results of uniaxial time-dependent ratcheting behavior of SS304 stainless steel at room temperature and 973K, a new time-dependent constitutive model was proposed. The model describes the time-dependent ratcheting by adding a static/thermal recovery into the Abdel-Karim-Ohno non-linear kinematic hardening rule. The capability of the model to describe the time-dependent ratcheting was discussed by comparing the simulations with the corresponding experimental results. It is shown that the revised unified viscoplastic model can simulate the time-dependent ratcheting reasonably both at room and high temperatures. (authors)

Bath parameter dependence of chemically deposited Copper Selenide thin film

International Nuclear Information System (INIS)

Al-Mamun; Islam, A.B.M.O.

2004-09-01

In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu 2-x Se thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu 2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se. (author)

Energy deposition measurements in fast reactor safety experiments with fission thermocouple detectors

International Nuclear Information System (INIS)

Wright, S.A.; Scott, H.L.

1979-01-01

The investigation of phenomena occurring in in-pile fast reactor safety experiments requires an accurate measurement of the time dependent energy depositions within the fissile material. At Sandia Laboratories thin-film fission thermocouples are being developed for this purpose. These detectors have high temperature capabilities (400 to 500 0 C), are sodium compatible, and have milli-second time response. A significant advantage of these detectors for use as energy deposition monitors is that they produce an output voltage which is directly dependent on the temperature of a small chip of fissile material within the detectors. However, heat losses within the detector make it necessary to correct the response of the detector to determine the energy deposition. A method of correcting the detector response which uses an inverse convolution procedure has been developed and successfully tested with experimental data obtained in the Sandia Pulse Reactor (SPR-II) and in the Annular Core Research Reactor

Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

International Nuclear Information System (INIS)

Hamadi, O.; Shakir, N.; Mohammed, F.

2010-01-01

CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

Energy Technology Data Exchange (ETDEWEB)

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

2014-04-07

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Time dependence of the 137Cs resuspension factor on the Romanian territory after the Chernobyl accident

International Nuclear Information System (INIS)

Mihaila, B.; Cuculeanu, V.

1994-01-01

On the basis of the radioactivity levels in aerosol and atmospheric deposition samples due to the Chernobyl accident, the resuspension factor of 137 Cs as a four-parameter function has been inferred. The standard procedure to derive the dependence of resuspension on time assumes that the initial deposit is instantaneous. A simple method assuming a constant deposition rate over a fixed period has been proposed. Also, based on existing experimental data, an attempt was made to consider a realistic time dependence of the deposition rate to cope with the particular case of the Chernobyl accident. The differences between the two models are outlined. The Chernobyl direct deposit has been assumed to be the deposit measured between 30 April and 30 June 1986. The calculated values of the resuspension factor are consistent with the IAEA's recommended model and depend on the rainfall that occurred in June 1986 and the site-specific disturbance conditions during the first 100 d following 1 July 1986 and only on artificial disturbance by humans and vehicles after that. 16 refs., 5 figs., 3 tabs

The temperature dependent amide I band of crystalline acetanilide

Energy Technology Data Exchange (ETDEWEB)

Cruzeiro, Leonor [CCMAR, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal); Physics Department, FCT, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal); Freedman, Holly [CCMAR, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal)

2013-10-01

The temperature dependent anomalous peak in the amide I band of crystalline acetanilide is thought to be due to self-trapped states. On the contrary, according to the present model, the anomalous peak comes from the fraction of ACN molecules strongly hydrogen-bonded to a neighboring ACN molecule, and its intensity decreases because, on average, this fraction decreases as temperature increases. This model provides, for the first time, an integrated and theoretically consistent view of the temperature dependence of the full amide I band and a qualitative explanation of some of the features of nonlinear pump–probe experiments.

The temperature dependent amide I band of crystalline acetanilide

Science.gov (United States)

Cruzeiro, Leonor; Freedman, Holly

2013-10-01

The temperature dependent anomalous peak in the amide I band of crystalline acetanilide is thought to be due to self-trapped states. On the contrary, according to the present model, the anomalous peak comes from the fraction of ACN molecules strongly hydrogen-bonded to a neighboring ACN molecule, and its intensity decreases because, on average, this fraction decreases as temperature increases. This model provides, for the first time, an integrated and theoretically consistent view of the temperature dependence of the full amide I band and a qualitative explanation of some of the features of nonlinear pump-probe experiments.

The temperature dependent amide I band of crystalline acetanilide

International Nuclear Information System (INIS)

Cruzeiro, Leonor; Freedman, Holly

2013-01-01

The temperature dependent anomalous peak in the amide I band of crystalline acetanilide is thought to be due to self-trapped states. On the contrary, according to the present model, the anomalous peak comes from the fraction of ACN molecules strongly hydrogen-bonded to a neighboring ACN molecule, and its intensity decreases because, on average, this fraction decreases as temperature increases. This model provides, for the first time, an integrated and theoretically consistent view of the temperature dependence of the full amide I band and a qualitative explanation of some of the features of nonlinear pump–probe experiments.

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

2015-09-30

The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

Effect of Solution Molarity, Substrate Temperature and Spray Time on The Structural and Optical Properties Of ZnO Thin Films Deposited By Spray Pyrolysis

International Nuclear Information System (INIS)

Ramadan, A.A.; Hashem, H. M.; El-Sayed, S. M.; Ashour, A.H.; Abdel-Haleem, S.M.

2013-01-01

Zinc oxide thin films were deposited on a glass substrate by spray pyrolysis technique using solution of zinc acetate and air as the carrier gas. Effects of solution molarity, substrate temperature and spray time on films properties were investigated. All films deposited were characterized using X-ray diffraction for structural characterization and UV-VIS transmission spectrophotometry for optical properties. According to the analytical method, the type of crystal lattice was found to be hexagonal and X-ray diffraction (XRD) patterns showed that the films deposited were polycrystalline with (002) plane as preferential orientation. The values of lattice constant, grain size, micro strain and dislocation density of all samples were calculated. In addition, Optical behaviors of film samples were analyzed by obtaining transmission spectra, in the wavelength range of 350-800 nm. The UV-VIS spectroscopy shows the high transparency of ZnO films in the UV region. An optimization of the films has been carried out to determine the best preparation conditions.

The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

International Nuclear Information System (INIS)

Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

2016-01-01

CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

Correlation between temperature dependence of elastic moduli and Debye temperature of paramagnetic metal

International Nuclear Information System (INIS)

Bodryakov, V.Yu.; Povzner, A.A.

2000-01-01

The correlation between the temperature dependence of elastic moduli and the Debye temperature of paramagnetic metal is analyzed in neglect of the temperature dependence of the Poison coefficient σ within the frames of the Debye-Grueneisen presentations. It is shown, that namely the temperature dependence of the elastic moduli determines primarily the temperature dependence of the Debye temperature Θ(T). On the other hand, the temperature dependence Θ(T) very weakly effects the temperature dependence of the elastic moduli. The later made it possible to formulate the self-consistent approach to calculation of the elastic moduli temperature dependence. The numerical estimates of this dependence parameters are conducted by the example of the all around compression modulus of the paramagnetic lutetium [ru

Fouling deposition characteristic by variation of coal particle size and deposition temperature in DTF (Drop Tube Furnace)

Energy Technology Data Exchange (ETDEWEB)

Namkung, Hueon; Jeon, Youngshin; Kim, Hyungtaek [Ajou Univ., Suwon (Korea, Republic of). Div. of Energy Systems Research; Xu, Li-hua [IAE, Suwon (Korea, Republic of). Plant Engineering Center

2013-07-01

One of the major operation obstacles in gasification process is ash deposition phenomenon. In this investigation, experiment was carried out to examine coal fouling characteristics using a laminar DTF (Drop Tube Furnace) with variation of operating condition such as different coal size, and probe surface temperature. Four different samples of pulverized coal were injected into DTF under various conditions. The ash particles are deposited on probe by impacting and agglomerating action. Fouling grains are made of eutectic compound, which is made by reacting with acid minerals and alkali minerals, in EPMA (Electron Probe Micro-Analysis). And agglomeration area of fouling at top layer is wide more than it of middle and bottom layer. The major mineral factors of fouling phenomenon are Fe, Ca, and Mg. The deposition quantity of fouling increases with increasing particle size, high alkali mineral (Fe, Ca, and Mg) contents, and ash deposition temperature.

Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

DEFF Research Database (Denmark)

Sarkar, I.; Laux, M.; Demokritova, J.

2010-01-01

We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

CERN Document Server

Li Peng; Mazumder, J

2003-01-01

Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

EFFECT OF OIL TEMPERATURE ON THE WAX DEPOSITION OF CRUDE OIL WITH COMPOSITION ANALYSIS

Directory of Open Access Journals (Sweden)

Qing Quan

Full Text Available Abstract Wax deposition behavior was investigated in a set of one-inch experiment flow loops, using a local crude oil with high wax content. The temperature of the oil phase is chosen as a variable parameter while the temperature of the coolant media is maintained constant. Detailed composition of the deposit is characterized using High Temperature Gas Chromatography. It was found that the magnitude of the diffusion of the heavier waxy components (C35-C50 decreases when the oil temperature decreases, but the magnitude of the diffusion of the lighter waxy components increases. This result means that the diffusion of wax molecules shifts towards lower carbon number, which further proves the concept of molecular diffusion. Meanwhile, a meaningful phenomenon is that the mass of the deposit increases with the oil temperature decrease, which definitely proves the influence of wax solubility on deposition, while the formation of an incipient gel layer reflects the fact that an increase in the mass of the deposit does not mean a larger wax percentage fraction at lower oil temperature.

Vacuum deposition and pulsed modification of Ge thin films on Si. Structure and photoluminescence

International Nuclear Information System (INIS)

Batalov, R.I.; Bayazitov, R.M.; Novikov, G.A.; Shustov, V.A.; Bizyaev, D.A.; Gajduk, P.I.; Ivlev, G.D.; Prokop'ev, S.L.

2013-01-01

Vacuum deposition of Ge thin films onto Si substrates by magnetron sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited films by powerful laser or ion beams was performed. The dependence of the structure and optical properties of Ge/Si films on parameters of pulsed treatments was investigated. Optimum parameters of deposition and pulsed treatments resulting into light emitting monocrystalline Ge/Si layers are determined. (authors)

Time-dependent deformation at elevated temperatures in basalt from El Hierro, Stromboli and Teide volcanoes

Science.gov (United States)

Benson, P. M.; Fahrner, D.; Harnett, C. E.; Fazio, M.

2014-12-01

Time dependent deformation describes the process whereby brittle materials deform at a stress level below their short-term material strength (Ss), but over an extended time frame. Although generally well understood in engineering (where it is known as static fatigue or "creep"), knowledge of how rocks creep and fail has wide ramifications in areas as diverse as mine tunnel supports and the long term stability of critically loaded rock slopes. A particular hazard relates to the instability of volcano flanks. A large number of flank collapses are known such as Stromboli (Aeolian islands), Teide, and El Hierro (Canary Islands). Collapses on volcanic islands are especially complex as they necessarily involve the combination of active tectonics, heat, and fluids. Not only does the volcanic system generate stresses that reach close to the failure strength of the rocks involved, but when combined with active pore fluid the process of stress corrosion allows the rock mass to deform and creep at stresses far lower than Ss. Despite the obvious geological hazard that edifice failure poses, the phenomenon of creep in volcanic rocks at elevated temperatures has yet to be thoroughly investigated in a well controlled laboratory setting. We present new data using rocks taken from Stromboli, El Heirro and Teide volcanoes in order to better understand the interplay between the fundamental rock mechanics of these basalts and the effects of elevated temperature fluids (activating stress corrosion mechanisms). Experiments were conducted over short (30-60 minute) and long (8-10 hour) time scales. For this, we use the method of Heap et al., (2011) to impose a constant stress (creep) domain deformation monitored via non-contact axial displacement transducers. This is achieved via a conventional triaxial cell to impose shallow conditions of pressure (<25 MPa) and temperature (<200 °C), and equipped with a 3D laboratory seismicity array (known as acoustic emission, AE) to monitor the micro

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Akhilesh Kumar [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Hsu, Jen-Hwa [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

2016-11-15

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]{sub 2}/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T{sub A}=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T{sub A}≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T{sub A}=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T{sub A} and temperature. A large reduction in coercivity (H{sub C}) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H{sub C}(T), i.e., a broad minimum in H{sub C}(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H{sub C}(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T{sub C}) with T{sub A} (x). The multilayer films annealed at 200 °C exhibit low value of T{sub C} with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T{sub C} with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and

Low pressure chemical vapour deposition of temperature resistant colour filters

International Nuclear Information System (INIS)

Verheijen, J.; Bongaerts, P.; Verspui, G.

1987-01-01

The possibility to deposit multilayer colour filters, based on optical inference, by means of Low Pressure Chemical Vapour Deposition (LPCVD) was investigated. The filters were made in a standard LPCVD system by alternate deposition of Si/sub 3/N/sub 4/ and SiO/sub 2/ layers. This resulted in filters with excellent colour uniformity on glass and quartz substrates. No difference was measured between theoretically calculated transmission and the transmission of the filters deposited by LPCVD. Temperature treatment at 600 0 C in air air showed no deterioration of filter quality and optical properties

The Influence of Temperature on Time-Dependent Deformation and Failure in Granite: A Mesoscale Modeling Approach

Science.gov (United States)

Xu, T.; Zhou, G. L.; Heap, Michael J.; Zhu, W. C.; Chen, C. F.; Baud, Patrick

2017-09-01

An understanding of the influence of temperature on brittle creep in granite is important for the management and optimization of granitic nuclear waste repositories and geothermal resources. We propose here a two-dimensional, thermo-mechanical numerical model that describes the time-dependent brittle deformation (brittle creep) of low-porosity granite under different constant temperatures and confining pressures. The mesoscale model accounts for material heterogeneity through a stochastic local failure stress field, and local material degradation using an exponential material softening law. Importantly, the model introduces the concept of a mesoscopic renormalization to capture the co-operative interaction between microcracks in the transition from distributed to localized damage. The mesoscale physico-mechanical parameters for the model were first determined using a trial-and-error method (until the modeled output accurately captured mechanical data from constant strain rate experiments on low-porosity granite at three different confining pressures). The thermo-physical parameters required for the model, such as specific heat capacity, coefficient of linear thermal expansion, and thermal conductivity, were then determined from brittle creep experiments performed on the same low-porosity granite at temperatures of 23, 50, and 90 °C. The good agreement between the modeled output and the experimental data, using a unique set of thermo-physico-mechanical parameters, lends confidence to our numerical approach. Using these parameters, we then explore the influence of temperature, differential stress, confining pressure, and sample homogeneity on brittle creep in low-porosity granite. Our simulations show that increases in temperature and differential stress increase the creep strain rate and therefore reduce time-to-failure, while increases in confining pressure and sample homogeneity decrease creep strain rate and increase time-to-failure. We anticipate that the

Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Energy Technology Data Exchange (ETDEWEB)

Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

2006-10-25

Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

The Coupling Effect Research of Ash Deposition and Condensation in Low Temperature Flue Gas

Directory of Open Access Journals (Sweden)

Lei Ma

2016-01-01

Full Text Available Ash deposition is a key factor that deteriorates the heat transfer performance and leads to higher energy consumption of low pressure economizer working in low temperature flue gas. In order to study the ash deposition of heat exchange tubes in low temperature flue gas, two experiments are carried out with different types of heat exchange tubes in different flue gas environments. In this paper, Nusselt Number Nu and fouling factor ε are calculated to describe the heat transfer characteristics so as to study the ash deposition condition. The scanning electron microscope (SEM is used for the analysis of ash samples obtained from the outer wall of heat exchange tubes. The dynamic process of ash deposition is studied under different temperatures of outer wall. The results showed that ash deposition of heat exchanger will achieve a stable state in constant flue gas environment. According to the condition of condensation of acid vapor and water vapor, the process of ash deposition can be distinguished as mere ash deposition, acid-ash coupling deposition, and acid-water-ash coupling deposition.

Temperature dependence of nuclear surface properties

International Nuclear Information System (INIS)

Campi, X.; Stringari, S.

1982-01-01

Thermal properties of nuclear surface are investigated in a semi-infinite medium. Explicit analytical expression are given for the temperature dependence of surface thickness, surface energy and surface free energy. In this model the temperature effects depend critically on the nuclear incompressibility and on the shape of the effective mass at the surface. To illustrate the relevance of these effects we made an estimate of the temperature dependence of the fission barrier height. (orig.)

Enhanced performance of CdS/CdTe thin-film devices through temperature profiling techniques applied to close-spaced sublimation deposition

Energy Technology Data Exchange (ETDEWEB)

Xiaonan Li; Sheldon, P.; Moutinho, H.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

The authors describe a methodology developed and applied to the close-spaced sublimation technique for thin-film CdTe deposition. The developed temperature profiles consisted of three discrete temperature segments, which the authors called the nucleation, plugging, and annealing temperatures. They have demonstrated that these temperature profiles can be used to grow large-grain material, plug pinholes, and improve CdS/CdTe photovoltaic device performance by about 15%. The improved material and device properties have been obtained while maintaining deposition temperatures compatible with commercially available substrates. This temperature profiling technique can be easily applied to a manufacturing environment by adjusting the temperature as a function of substrate position instead of time.

Small grain size zirconium-based coatings deposited by magnetron sputtering at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Jimenez, O., E-mail: omar.jimenez.udg@gmail.com [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Audronis, M.; Leyland, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Flores, M.; Rodriguez, E. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Kanakis, K.; Matthews, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)

2015-09-30

Hard, partly amorphous, ZrTiB(N) coatings were deposited by Physical Vapour Deposition (PVD) onto (111) silicon wafers at low substrate temperatures of 85 and 110 °C using Closed Field Unbalanced Magnetron Sputtering. A segmented rectangular sputter target composed of three pieces (Zr/TiB{sub 2}/Zr) was used as the source of evaporation of coating components. Two different substrate biases (i.e. floating potential and − 50 V) and N{sub 2} reactive-gas flow rates of 2, 4 and 6 sccm were employed as the main deposition parameter variables. The chemical composition, structure, morphology and mechanical properties were investigated using a variety of analytical techniques such as Glow-Discharge Optical Emission Spectroscopy, cross-sectional Scanning Electron Microscopy (SEM), Glancing Angle X-ray Diffraction (GAXRD) and nanoindentation. With other parameters fixed, coating properties were found to be dependent on the substrate negative bias and nitrogen flow rate. Linear scan profiles and SEM imaging revealed that all coatings were smooth, dense and featureless (in fracture cross section) with no apparent columnar morphology or macro-defects. GAXRD structural analysis revealed that mostly metallic phases were formed for coatings containing no nitrogen, whereas a solid solution (Zr,Ti)N single phase nitride was found in most of the reactively deposited coatings — exhibiting a very small grain size due to nitrogen and boron grain refinement effects. Hardness values from as low as 8.6 GPa up to a maximum of 25.9 GPa are related mainly to solid solution strengthening effects. The measured elastic moduli correlated with the trends in hardness behaviour; values in the range of 120–200 GPa were observed depending on the selected deposition parameters. Also, high H/E values (> 0.1) were achieved with several of the coatings.

Time-dependent Fracture Behaviour of Polyampholyte Hydrogels

Science.gov (United States)

Sun, Tao Lin; Luo, Feng; Nakajima, Tasuku; Kurokawa, Takayuki; Gong, Jian Ping

Recently, we report that polyampholytes, polymers bearing randomly dispersed cationic and anionic repeat groups, form tough and self-healing hydrogels with excellent multiple mechanical functions. The randomness makes ionic bonds with a wide distribution of strength, via inter and intra chain complexation. As the breaking and reforming of ionic bonds are time dependent, the hydrogels exhibit rate dependent mechanical behaviour. We systematically studied the tearing energy by tearing test with various tearing velocity under different temperature, and the linear viscoelastic behaviour over a wide range of frequency and temperature. Results have shown that the tearing energy markedly increase with the crack velocity and decrease with the measured temperature. In accordance with the prediction of Williams, Landel, and Ferry (WLF) rate-temperature equivalence, a master curve of tearing energy dependence of crack velocity can be well constructed using the same shift factor from the linear viscoelastic data. The scaling relation of tearing energy as a function of crack velocity can be predicted well by the rheological data according to the developed linear fracture mechanics.

Time and temperature dependent breakdown characteristics of ZnS:Mn films obtained by rf-magnetron sputtering

Science.gov (United States)

Zhigal'Skii, A. A.; Mukhachev, V. A.; Troyan, P. E.

1994-04-01

Breakdown delay times (tdel) for films of managanese-doped zinc sulfide (ZnS:Mn) were measured in the range 10-6-10-1 s. The maximum value was tdel=10-3-10-2 s. The electrical strength (Ebr) was found to increase as the voltage pulse duration was reduced, the more so the thinner the ZnS:Mn film. The temperature dependence of Ebr exhibited a weak reduction in Ebr as the temperature was raised to roughly 80°C and a sharp reduction in Ebr for T>130°C. A maximum in Ebr was observed at T≈130°C which is presumably explained by a structural modification of the ZnS:Mn film. The experimental results obtained are explained in terms of a combined electronic and thermal breakdown mechanism.

Influence of load and temperature on tribological behaviour of electroless Ni-P deposits

Science.gov (United States)

Kundu, S.; Das, S. K.; Sahoo, P.

2016-09-01

Electroless Ni-P coatings have shown tremendous potential as tribology material at room temperature. However, the performance of the same in high temperature field needs to be evaluated as investigation reveals the softening of most of the coating materials. In the current study, both as-deposited as well as heat treated samples are developed for the performance evaluation. Coatings are tested under different loads with a constant speed and at temperatures ranging from room temperature (R.T.) to 500°C. Tribological tests are carried out on a pin-on- disc tribotester by selecting a wear track diameter of 60 mm for 5 minutes. Wear is reported in the form of wear rate by following Archard's equation. The microstructure characterization of the coating is performed using SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-Ray Analysis) and XRD (X-Ray Diffraction Analysis). Coating is developed with phosphorous weight percentages around 9% on cylindrical mild steel samples and the deposition thickness is observed to be around 50 μm. The as-deposited coating is found to be amorphous in nature and hardness of the as-deposited coating is found to be around 585HV01. Friction coefficient increases initially with the increase in temperature from room temperature up to 100°C but thereafter gradually decrease with the increase in temperature. Initial increase in temperature (up to 100°C) provides higher rate of wear compared to room temperature but with further increase it drops in most of the cases. Wear rate increases with the increase in temperature but as it crosses or nears the phase transformation temperature (around 340°C), the scenario gets reversed. From X-ray diffraction analysis, it is found that coating is amorphous in as-deposited condition but transforms into a crystalline structure with heat treatment.

Transition from Arrhenius to non-Arrhenius temperature dependence of structural relaxation time in glass-forming liquids: continuous versus discontinuous scenario.

Science.gov (United States)

Popova, V A; Surovtsev, N V

2014-09-01

The temperature dependences of α relaxation time τ(α)(T) of three glass-forming liquids (salol, o-terphenyl, and α-picoline) were investigated by a depolarized light scattering technique. A detailed description of τ(α)(T) near T(A), the temperature of the transition from the Arrhenius law at high temperatures to a non-Arrhenius behavior of τ(α)(T) at lower temperatures, was done. It was found that this transition is quite sharp. If the transition is described as switching from the Arrhenius law to the Vogel-Fulcher-Tammann law, it occurs within the temperature range of about 15 K or less. Most of the known expressions for τ(α)(T) cannot describe this sharp transition. Our analysis revealed that this transition can be described either as a discontinuous transition in the spirit of the frustration-limited domain theory [D. Kivelson, G. Tarjus, X. Zhao, and S. A. Kivelson, Phys. Rev. E 53, 751 (1996)], implying a phase transition, or by a phenomenological expression recently suggested [B. Schmidtke, N. Petzold, R. Kahlau, M. Hofmann, and E. A. Rössler, Phys. Rev. E 86, 041507 (2012)], where the activation energy includes the term depending exponentially on temperature.

The Study of Selected Properties of Ti EB PVD Coating Deposited Onto Inner Tube Surface at Low Temperature

Directory of Open Access Journals (Sweden)

Kottfer D.

2016-03-01

Full Text Available This study investigates the selected properties of the thin Ti coating applied by activated evaporation EB PVD technique. This technique was used for the deposition of Ti thin coating onto inner surface of OKhN3 MFA steel tubes. Deposition process was carried out at temperature 200°C. Conventional type of coatings - monolayer Ti - was analyzed by standard techniques for surface status and quality assessment - coating thickness, chemical composition by EDX analysis, adhesion, hardness, roughness, and growth direction of columns at room temperature. Ti monolayer achieved roughness Ra equal from 0.42 μm to 0.47 μm. The resulting hardness was from 2 GPa to 8.5 GPa depending on the sample location inside the vacuum chamber. Placing of the coated surface also affected the direction of grain growth of Ti coating columns. The angles α of grain growth were found to be from 40° to 60°. Angle α increased two to three times more than the incidence angle β (from 12° to 28° of evaporated Ti particles. Values of the adhesion measured along the Ti growth direction were mostly higher (up to 10% or the same as those measured perpendicular to it.

Temperature dependence of acceptor-hole recombination in germanium

International Nuclear Information System (INIS)

Darken, L.S.; Jellison, G.E. Jr.

1989-01-01

The recombination kinetics of several centers (Zn - , Cu - , B - , CuH - 2 , CuH - x , Zn = , Cu = , and CuH = x ) in high-purity Ge have been measured as a function of temperature from 8 to 160 K by transient capacitance techniques and are significantly faster than expected from cascade theory. The cascade theory also gives the wrong temperature dependence, and the wrong z dependence. Instead, the data are generally fit by the expression N v /4pτ c congruent kT/h (p and τ c are, respectively, the free-hole concentration in the sample and the experimental mean capture time for a center)

Temperature dependence of Brewster's angle.

Science.gov (United States)

Guo, Wei

2018-01-01

In this work, a dielectric at a finite temperature is modeled as an ensemble of identical atoms moving randomly around where they are trapped. Light reflection from the dielectric is then discussed in terms of atomic radiation. Specific calculation demonstrates that because of the atoms' thermal motion, Brewster's angle is, in principle, temperature-dependent, and the dependence is weak in the low-temperature limit. What is also found is that the Brewster's angle is nothing but a result of destructive superposition of electromagnetic radiation from the atoms.

Temperature dependence of plastic scintillators

Science.gov (United States)

Peralta, L.

2018-03-01

Plastic scintillator detectors have been studied as dosimeters, since they provide a cost-effective alternative to conventional ionization chambers. Several articles have reported undesired response dependencies on beam energy and temperature, which provides the motivation to determine appropriate correction factors. In this work, we studied the light yield temperature dependency of four plastic scintillators, BCF-10, BCF-60, BC-404, RP-200A and two clear fibers, BCF-98 and SK-80. Measurements were made using a 50 kVp X-ray beam to produce the scintillation and/or radioluminescence signal. The 0 to 40 °C temperature range was scanned for each scintillator, and temperature coefficients were obtained.

Substrate bias voltage and deposition temperature dependence on ...

Indian Academy of Sciences (India)

Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of ..... For line focusing, incident beam mask was employed with ..... org/content/avs/journal/jvst/11/4/10.1116/1.1312732. Thornton J A ...

Modeling the temperature dependence of thermophysical properties: Study on the effect of temperature dependence for RFA.

Science.gov (United States)

Watanabe, Hiroki; Kobayashi, Yo; Hashizume, Makoto; Fujie, Masakatsu G

2009-01-01

Radio frequency ablation (RFA) has increasingly been used over the past few years and RFA treatment is minimally invasive for patients. However, it is difficult for operators to control the precise formation of coagulation zones due to inadequate imaging modalities. With this in mind, an ablation system using numerical simulation to analyze the temperature distribution of the organ is needed to overcome this deficiency. The objective of our work is to develop a temperature dependent thermophysical liver model. First, an overview is given of the development of the thermophysical liver model. Second, a simulation to evaluate the effect of temperature dependence of the thermophysical properties of the liver is explained. Finally, the result of the simulation, which indicated that the temperature dependence of thermophysical properties accounts for temperature differences influencing the accuracy of RFA treatment is described.

Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

Science.gov (United States)

Sullivan, Roy M.

2016-01-01

The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

International Nuclear Information System (INIS)

Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

2017-01-01

Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

2017-04-30

Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

International Nuclear Information System (INIS)

Lin, Y.C.; Li, J.Y.; Yen, W.T.

2008-01-01

Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

Temperature-dependent release of volatile organic compounds of eucalypts by direct analysis in real time (DART) mass spectrometry.

Science.gov (United States)

Maleknia, Simin D; Vail, Teresa M; Cody, Robert B; Sparkman, David O; Bell, Tina L; Adams, Mark A

2009-08-01

A method is described for the rapid identification of biogenic, volatile organic compounds (VOCs) emitted by plants, including the analysis of the temperature dependence of those emissions. Direct analysis in real time (DART) enabled ionization of VOCs from stem and leaf of several eucalyptus species including E. cinerea, E. citriodora, E. nicholii and E. sideroxylon. Plant tissues were placed directly in the gap between the DART ionization source skimmer and the capillary inlet of the time-of-flight (TOF) mass spectrometer. Temperature-dependent emission of VOCs was achieved by adjusting the temperature of the helium gas into the DART ionization source at 50, 100, 200 and 300 degrees C, which enabled direct evaporation of compounds, up to the onset of pyrolysis of plant fibres (i.e. cellulose and lignin). Accurate mass measurements facilitated by TOF mass spectrometry provided elemental compositions for the VOCs. A wide range of compounds was detected from simple organic compounds (i.e. methanol and acetone) to a series of monoterpenes (i.e. pinene, camphene, cymene, eucalyptol) common to many plant species, as well as several less abundant sesquiterpenes and flavonoids (i.e. naringenin, spathulenol, eucalyptin) with antioxidant and antimicrobial properties. The leaf and stem tissues for all four eucalypt species showed similar compounds. The relative abundances of methanol and ethanol were greater in stem wood than in leaf tissue suggesting that DART could be used to investigate the tissue-specific transport and emissions of VOCs. Copyright (c) 2009 John Wiley & Sons, Ltd.

Liquid-filled ionization chamber temperature dependence

Energy Technology Data Exchange (ETDEWEB)

Franco, L. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain)]. E-mail: luciaff@usc.es; Gomez, F. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Iglesias, A. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Pardo, J. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Pazos, A. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Pena, J. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Zapata, M. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain)

2006-05-10

Temperature and pressure corrections of the read-out signal of ionization chambers have a crucial importance in order to perform high-precision absolute dose measurements. In the present work the temperature and pressure dependences of a sealed liquid isooctane filled ionization chamber (previously developed by the authors) for radiotherapy applications have been studied. We have analyzed the thermal response of the liquid ionization chamber in a {approx}20 deg. C interval around room temperature. The temperature dependence of the signal can be considered linear, with a slope that depends on the chamber collection electric field. For example, a relative signal slope of 0.27x10{sup -2}K{sup -1} for an operation electric field of 1.67x10{sup 6}Vm{sup -1} has been measured in our detector. On the other hand, ambient pressure dependence has been found negligible, as expected for liquid-filled chambers. The thermal dependence of the liquid ionization chamber signal can be parametrized within the Onsager theory on initial recombination. Considering that changes with temperature of the detector response are due to variations in the free ion yield, a parametrization of this dependence has been obtained. There is a good agreement between the experimental data and the theoretical model from the Onsager framework.

Surface morphology of polyethylene glycol films produced by matrix-assisted pulsed laser evaporation (MAPLE): Dependence on substrate temperature

DEFF Research Database (Denmark)

Rodrigo, K.; Czuba, P.; Toftmann, B.

2006-01-01

The dependence of the surface morphology on the substrate temperature during film deposition was investigated for polyethylene glycol (PEG) films by matrix-assisted pulsed laser evaporation (MAPLE). The surface structure was studied with a combined technique of optical imaging and AFM measurements...

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Science.gov (United States)

Wu, Zijian; Cai, Jian; Wang, Junqiang; Geng, Zhiting; Wang, Qian

2018-02-01

Silver nanoparticles (Ag NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification layer. The bonding structure consisted of a Ti adhesive/barrier layer and a Cu substrate layer was fabricated on the silicon wafer. Ag NPs were deposited on the Cu surface by magnetron sputtering in a high-pressure environment and a loose structure with NPs was obtained. Shear tests were performed after bonding, and the influences of PVD pressure, bonding pressure, bonding temperature and annealing time on shear strength were assessed. Cu-Cu bonding with Ag NPs was accomplished at 200°C for 3 min under the pressure of 30 MPa without a post-annealing process, and the average bonding strength of 13.99 MPa was reached. According to cross-sectional observations, a void-free bonding interface with an Ag film thickness of around 20 nm was achieved. These results demonstrated that a reliable low-temperature short-time Cu-Cu bonding was realized by the sintering process of Ag NPs between the bonding pairs, which indicated that this bonding method could be a potential candidate for future ultra-fine pitch 3D integration.

Effect of deposition temperature on the bonding configurations and properties of fluorine doped silicon oxide film

International Nuclear Information System (INIS)

Lu, Wei-Lun; Kuo, Ting-Wei; Huang, Chun-Hsien; Wang, Na-Fu; Tsai, Yu-Zen; Wang, Ming-Wei; Hung, Chen-I.; Houng, Mau-Phon

2011-01-01

In our study, fluorine-doped silicon oxide (SiOF) films were prepared using a mixture of SiH 4 , N 2 O, and CF 4 in a conventional plasma enhanced chemical vapor deposition system at various deposition temperatures. Deposition behaviors are determined by the deposition temperature. Our results show that for temperatures below 300 deg. C the process is surface-reaction-limited controlled, but becomes diffusion-limited when the deposition temperature exceeds 300 deg. C. The surface topography images obtained using an atomic force microscope show that a large amount of free volume space was created in the film with a low temperature deposition. The optical microscope and secondary ion mass spectrometer analyses show that precipitates were produced at the near-surface at the deposition temperature of 150 deg. C with a higher fluorine concentration of 2.97 at.%. Our results show that the properties of the SiOF film are controlled not only by the free volume space but also by the fluorine concentration. An optimal SiOF film prepared at a temperature of 200 deg. C shows a low dielectric constant of 3.55, a leakage current of 1.21 x 10 -8 A/cm 2 at 1 MV/cm, and a fluorine concentration of 2.5 at.%.

Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

Science.gov (United States)

Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

2017-03-01

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Temperature dependence of erythrocyte aggregation in vitro by backscattering nephelometry

Science.gov (United States)

Sirko, Igor V.; Firsov, Nikolai N.; Ryaboshapka, Olga M.; Priezzhev, Alexander V.

1997-05-01

We apply backscattering nephelometry technique to register the alterations of the scattering signal from a whole blood sample due to appearance or disappearance of different types of erythrocyte aggregates in stasis and under controlled shear stress. The measured parameters are: the characteristic times of linear and 3D aggregates formation, and the strength of aggregates of different types. These parameters depend on the sample temperature in the range of 2 divided by 50 degrees C. Temporal parameters of the aggregation process strongly increase at temperature 45 degrees C. For samples of normal blood the aggregates strength parameters do not significantly depend on the sample temperature, whereas for blood samples from patients suffering Sjogren syndrome we observe high increase of the strength of 3D and linear aggregates and decrease of time of linear aggregates formation at low temperature of the sample. This combination of parameters is opposite to that observed in the samples of pathological blood at room temperature. Possible reasons of this behavior of aggregation state of blood and explanation of the observed effects will be discussed.

Dynamic temperature estimation and real time emergency rating of transmission cables

DEFF Research Database (Denmark)

Olsen, R. S.; Holboll, J.; Gudmundsdottir, Unnur Stella

2012-01-01

enables real time emergency ratings, such that the transmission system operator can make well-founded decisions during faults. Hereunder is included the capability of producing high resolution loadability vs. time schedules within few minutes, such that the TSO can safely control the system.......). It is found that the calculated temperature estimations are fairly accurate — within 1.5oC of the finite element method (FEM) simulation to which it is compared — both when looking at the temperature profile (time dependent) and the temperature distribution (geometric dependent). The methodology moreover...

Temperature dependence of three-body ion-molecule reactions

International Nuclear Information System (INIS)

Boehringer, H.; Arnold, F.

1983-01-01

The temperature dependence of the ion-molecule association reactions (i) N 2 + + N 2 + M → N 4 + + M (M=N 2 , He), (ii) O 2 + + O 2 + M → O 4 + + M (M=O 2 , He) and (iii) He + + 2He → He 2 + + He have been studied over an extended temperature range to temperatures as low as 30K with a recently constructed liquid helium-cooled ion drift tube. Over most of the temperature range the threebody reaction rate coefficients show an inverse temperature dependence proportional to Tsup(-n) with n in the range 0.6 to 2.9. This temperature dependence is quite consistent with current theories of ion molecule association. At low temperatures, however, a deviation from the Tsup(-n) dependence was observed for the association reactions (ii). For reactions (i) different temperature dependences were obtained for N 2 and He third bodies indicating an additional temperature dependence of the collisional stabilisation process. (Authors)

Temperature Range for Metasomatism at the Bakalskoe Siderite Deposits with Use of Geochemical Data

Directory of Open Access Journals (Sweden)

M. T. Krupenin

2017-06-01

Full Text Available The data obtained with the quantitative microprobe ankerite–siderite composition analysis of seven samples from the different parts of Bakalskoe field showed that the wallrock ankerites in the western and central parts of the ore field differ in average concentrations of FeCO 3 (respectively 14.21 and 20.84 wt.%. However, there is no significant difference in composition of siderites. The calculation of the Mg-Fe metasomatism temperatures based on ankerite-siderite and ankerite-breinerite geothermometers showed the close agreement of the values of both methods at temperatures of 250 °C and above. The average temperatures of siderite metasomatism in the central part of the Bakalskoe ore field are in range 250-270 ° C, and, in the peripheral part, the determined temperature does not exceed 190-220 ° C. These values do not depend on the position of the siderite deposits in stratigraphic level of the Bakalskaya Suite.

Modelling impacts of atmospheric deposition and temperature on long-term DOC trends.

Science.gov (United States)

Sawicka, K; Rowe, E C; Evans, C D; Monteith, D T; E I Vanguelova; Wade, A J; J M Clark

2017-02-01

It is increasingly recognised that widespread and substantial increases in Dissolved organic carbon (DOC) concentrations in remote surface, and soil, waters in recent decades are linked to declining acid deposition. Effects of rising pH and declining ionic strength on DOC solubility have been proposed as potential dominant mechanisms. However, since DOC in these systems is derived mainly from recently-fixed carbon, and since organic matter decomposition rates are considered sensitive to temperature, uncertainty persists over the extent to which other drivers that could influence DOC production. Such potential drivers include fertilisation by nitrogen (N) and global warming. We therefore ran the dynamic soil chemistry model MADOC for a range of UK soils, for which time series data are available, to consider the likely relative importance of decreased deposition of sulphate and chloride, accumulation of reactive N, and higher temperatures, on soil DOC production in different soils. Modelled patterns of DOC change generally agreed favourably with measurements collated over 10-20years, but differed markedly between sites. While the acidifying effect of sulphur deposition appeared to be the predominant control on the observed soil water DOC trends in all the soils considered other than a blanket peat, the model suggested that over the long term, the effects of nitrogen deposition on N-limited soils may have been sufficient to raise the "acid recovery DOC baseline" significantly. In contrast, reductions in non-marine chloride deposition and effects of long term warming appeared to have been relatively unimportant. The suggestion that future DOC concentrations might exceed preindustrial levels as a consequence of nitrogen pollution has important implications for drinking water catchment management and the setting and pursuit of appropriate restoration targets, but findings still require validation from reliable centennial-scale proxy records, such as those being developed

Temperature dependence of surface nanobubbles

NARCIS (Netherlands)

Berkelaar, R.P.; Seddon, James Richard Thorley; Zandvliet, Henricus J.W.; Lohse, Detlef

2012-01-01

The temperature dependence of nanobubbles was investigated experimentally using atomic force microscopy. By scanning the same area of the surface at temperatures from 51 °C to 25 °C it was possible to track geometrical changes of individual nanobubbles as the temperature was decreased.

Temperature-dependent magnetic EXAFS investigation of Gd

CERN Document Server

Wende, H; Poulopoulos, P N; Rogalev, A; Goulon, J; Schlagel, D L; Lograsso, T A; Baberschke, K

2001-01-01

Magnetic EXAFS (MEXAFS) is the helicity-dependent counterpart of the well-established EXAFS technique. By means of MEXAFS it is possible not only to analyze the local magnetic structure but also to learn about magnetic fluctuations. Here we present the MEXAFS of a Gd single crystal at the L sub 3 sub , sub 2 -edges in the temperature range of 10-250 K. For the first time MEXAFS was probed over a large range in reduced temperature of 0.04<=T/T sub C<=0.85 with T sub C =293 K. We show that the vibrational damping described by means of a Debye temperature of theta sub D =160 K must be taken into account for the spin-dependent MEXAFS before analyzing magnetic fluctuations. For a detailed analysis of the MEXAFS and the EXAFS, the experimental data are compared to ab initio calculations. This enables us to separate the individual single- from the multiple-scattering contributions. The MEXAFS data have been recorded at the ID 12A beamline of the European Synchrotron Radiation Facility (ESRF). To ensure that th...

Effects of temperature and particle size on deposition in land based turbines - article no. 051503

Energy Technology Data Exchange (ETDEWEB)

Crosby, J.M.; Lewis, S.; Bons, J.P.; Ai, W.G.; Fletcher, T.H. [Brigham Young University, Provo, UT (United States). Dept. for Mechanical Engineering

2008-09-15

Four series of tests were performed in an accelerated deposition test facility to study the independent effects of particle size, gas temperature, and metal temperature on ash deposits from two candidate power turbine synfuels (coal and petcoke). The facility matches the gas temperature and velocity of modern first stage high pressure turbine vanes while accelerating the deposition process. Particle size was found to have a significant effect on capture efficiency with larger particles causing significant thermal barrier coating (TBC) spallation during a 4 h accelerated test. In the second series of tests, particle deposition rate was found to decrease with decreasing gas temperature. The threshold gas temperature for deposition was approximately 960{sup o}C. In the third and fourth test series, impingement cooling was applied to the back side of the target coupon to simulate internal vane cooling. Capture efficiency was reduced with increasing mass flow of coolant air; however, at low levels of cooling, the deposits attached more tenaciously to the TBC layer. Postexposure analyses of the third test series (scanning electron microscopy and X-ray spectroscopy) show decreasing TBC damage with increased cooling levels.

Molecular dynamics simulation about porous thin-film growth in secondary deposition

International Nuclear Information System (INIS)

Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

2007-01-01

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters

Molecular dynamics simulation about porous thin-film growth in secondary deposition

Energy Technology Data Exchange (ETDEWEB)

Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)

2007-07-15

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.

Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

International Nuclear Information System (INIS)

Galloway, R.B.

2002-01-01

It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

Portable mini-chamber for temperature dependent studies using small angle and wide angle x-ray scattering

Science.gov (United States)

Dev, Arun Singh; Kumar, Dileep; Potdar, Satish; Pandit, Pallavi; Roth, Stephan V.; Gupta, Ajay

2018-04-01

The present work describes the design and performance of a vacuum compatible portable mini chamber for temperature dependent GISAXS and GIWAXS studies of thin films and multilayer structures. The water cooled body of the chamber allows sample annealing up to 900 K using ultra high vacuum compatible (UHV) pyrolytic boron nitride heater, thus making it possible to study the temperature dependent evolution of structure and morphology of two-dimensional nanostructured materials. Due to its light weight and small size, the chamber is portable and can be accommodated at synchrotron facilities worldwide. A systematic illustration of the versatility of the chamber has been demonstrated at beamline P03, PETRA-III, DESY, Hamburg, Germany. Temperature dependent grazing incidence small angle x-ray scattering (GISAXS) and grazing incidence wide angle x-ray scattering (GIWAXS) measurements were performed on oblique angle deposited Co/Ag multilayer structure, which jointly revealed that the surface diffusion in Co columns in Co/Ag multilayer enhances by increasing temperature from RT to ˜573 K. This results in a morphology change from columnar tilted structure to densely packed morphological isotropic multilayer.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Science.gov (United States)

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Temperature dependence of dynamical permeability characterization of magnetic thin films using shorted microstrip line probe

International Nuclear Information System (INIS)

Li, Xiling; Li, Chengyi; Chai, Guozhi

2017-01-01

A temperature dependence microwave permeability characterization system of magnetic thin film up to 10 GHz is designed and fabricated. This system can be used at temperatures ranging from room temperature to 200 °C, and is based on a shorted microstrip probe, which is made by microwave printed circuit board. Without contacting the magnetic thin films to the probe, the microwave permeability of the film can be detected without any limitations of sample size and with almost the same accuracy, as shown by comparison with the results obtained from a shorted microstrip transmission-line fixture. The complex permeability can be deduced by an analytical approach from the measured reflection coefficient of a strip line ( S 11 ) with and without a ferromagnetic film material on it. The procedures are the same with the shorted microstrip transmission-line method. The microwave permeability of an oblique deposited CoZr thin film was investigated with this probe. The results show that the room temperature dynamic permeability of the CoZr film is in good agreement with the results obtained from the established short-circuited microstrip perturbation method. The temperature dependence permeability results fit well with the Landau–Lifshitz–Gilbert equation. Development of the temperature-dependent measurement of the magnetic properties of magnetic thin film may be useful for the high-frequency application of magnetic devices at high temperatures. (paper)

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

Directory of Open Access Journals (Sweden)

Brett B. Lewis

2015-04-01

Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

Temperature dependency in motor skill learning.

Science.gov (United States)

Immink, Maarten A; Wright, David L; Barnes, William S

2012-01-01

The present study investigated the role of temperature as a contextual condition for motor skill learning. Precision grip task training occurred while forearm cutaneous temperature was either heated (40-45 °C) or cooled (10-15 °C). At test, temperature was either reinstated or changed. Performance was comparable between training conditions while at test, temperature changes decreased accuracy, especially after hot training conditions. After cold training, temperature change deficits were only evident when concurrent force feedback was presented. These findings are the first evidence of localized temperature dependency in motor skill learning in humans. Results are not entirely accounted for by a context-dependent memory explanation and appear to represent an interaction of neuromuscular and sensory processes with the temperature present during training and test.

Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

2008-10-01

A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone

Science.gov (United States)

Horita, Susumu; Jain, Puneet

2017-08-01

A low-temperature silcon oxide film was deposited at 160 to 220 °C using an atmospheric pressure CVD system with silicone oil vapor and ozone gases. It was found that the deposition rate is markedly increased by adding trichloroethylene (TCE) vapor, which is generated by bubbling TCE solution with N2 gas flow. The increase is more than 3 times that observed without TCE, and any contamination due to TCE is hardly observed in the deposited Si oxide films from Fourier transform infrared spectra.

Modelled temperature-dependent excitability behaviour of a generalised human peripheral sensory nerve fibre.

Science.gov (United States)

Smit, Jacoba E; Hanekom, Tania; Hanekom, Johan J

2009-08-01

The objective of this study was to determine if a recently developed human Ranvier node model, which is based on a modified version of the Hodgkin-Huxley model, could predict the excitability behaviour in human peripheral sensory nerve fibres with diameters ranging from 5.0 to 15.0 microm. The Ranvier node model was extended to include a persistent sodium current and was incorporated into a generalised single cable nerve fibre model. Parameter temperature dependence was included. All calculations were performed in Matlab. Sensory nerve fibre excitability behaviour characteristics predicted by the new nerve fibre model at different temperatures and fibre diameters compared well with measured data. Absolute refractory periods deviated from measured data, while relative refractory periods were similar to measured data. Conduction velocities showed both fibre diameter and temperature dependence and were underestimated in fibres thinner than 12.5 microm. Calculated strength-duration time constants ranged from 128.5 to 183.0 micros at 37 degrees C over the studied nerve fibre diameter range, with chronaxie times about 30% shorter than strength-duration time constants. Chronaxie times exhibited temperature dependence, with values overestimated by a factor 5 at temperatures lower than body temperature. Possible explanations include the deviated absolute refractory period trend and inclusion of a nodal strangulation relationship.

Development of high-temperature superconducting coated conductor by MOCVD method

International Nuclear Information System (INIS)

Kim, Chan Joong; Jun, Byung Hyuk; Jung, Choung Hwan

2004-07-01

To fabricate the second generation superconductor wire, coated conductor, we selected MOCVD (Metal organic chemical vapor deposition) method which is commercially available and whose growth rate is very high. The first buffer layer CeO 2 was successfully deposited on the Ni tape. The thick Y-stabilized ZrO 2 layer was thus inserted between two CeO 2 layers by MOCVD method. The c-axis growth of the first CeO 2 , the inserted YSZ and top CeO 2 layer was achieved by optimized the deposition condition for the three buffers. It was found that the YBCO deposition was fairly dependant on the depostion temperature, time, oxygen partial pressure, amount of the source supplied. Especially the thickness of the YBCO films was linearly dedendant on the deposition temperature and time, but current properties was not linearly dependant on the film thickness. The critical current (Ic) of the YBCO film grown on SrTiO 3 and IBAD template were over 100 A/cm-width and 50 A/cm-width at 77 K and 0 field. To establish the MOCVD process, collaboration work with several organizations was made

MAEROS, Multicomponent Aerosol Time Evolution

International Nuclear Information System (INIS)

1991-01-01

1 - Description of program or function: MAEROS calculates aerosol composition and mass concentration as a function of particle size and time. The processes that may be considered are coagulation due to Brownian motion, gravity, and turbulence; particle deposition due to gravitational settling, diffusion, and thermophoresis; particle growth due to condensation of a gas, typically water vapor, and time-varying sources of particles of different sizes and chemical compositions. 2 - Method of solution: The numerical technique used is based upon dividing the particle size domain into m sections and imposing the condition of mass conservation for each chemical component for the processes considered. Aerosol mass concentrations are grouped into sections (i.e., size classes) for which an average composition is determined. For m sections, a set of 2m(m+2) sectional coefficients must be calculated before integrating in time. These coefficients are determined from the basic coagulation, condensation, and deposition coefficients. Since the sectional coefficients depend on the physical properties of the containment chamber (e.g., temperature, pressure, chamber volume, and deposition surface area), they will generally need to be recalculated for a particular application. However, for a given containment chamber, the sectional coefficients will probably vary only with temperature and pressure. Consequently, the code has been developed so that sectional coefficients are stored at a user-specified upper and lower bound for both temperature and pressure, and linear interpolation is used to determine the appropriate sectional coefficients for a given temperature and pressure. A Runge-Kutta-Fehlberg method is used to integrate in time. 3 - Restrictions on the complexity of the problem - Maxima of: 20 sections, 8 components, 50 rows for plotting, 101 columns for plotting. MAEROS is limited to geometrically spaced sections in particle mass (i.e., v(m+1).GE.2v(m) is the largest particle

Temperature profiles of time dependent tokamak plasmas from the parallel Ohm's law

International Nuclear Information System (INIS)

Micozzi, P.; Roccella, M.

1993-01-01

Profile consistency based on the parallel component of Ohm's law has been used to obtain electron temperature profiles. A resistive neoclassical term and a term that accounts for the bootstrap current contributions have been considered in Ohm's law. A numerical code has been developed to find solutions according to the MHD equilibrium equations. For stationary plasmas, the temperature profiles, obtained by a procedure in which a pseudo-parabolic shape of (J φ /R) is assumed and the peak temperature known from experiments is used, are close to the experimental data for several very different machines (JET, TFTR, ASDEX, ALCATOR-C and FT). The main feature of the model is its capability to provide an easy parametrization of Ohm's law also in non-stationary cases, without going through the complication of a detailed solution of the magnetic field diffusion equation. A rule for estimating a maximum value of the current diffusion time inside the plasma volume in such situations is given. This rule accounts for both the temperature profiles and the stabilization times in some non-stationary pulses observed in JET. (author). 28 refs, 12 figs

Aerosol deposition of Ba0.8Sr0.2TiO3 thin films

Directory of Open Access Journals (Sweden)

Branković Zorica

2009-01-01

Full Text Available In this work we optimized conditions for aerosol deposition of homogeneous, nanograined, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0 or Si covered by platinum (Pt (1 1 1 /Ti/SiO2/Si. Investigation showed that the best films were obtained at substrate temperature of 85ºC. After deposition films were slowly heated up to 650ºC, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crackfree, and smooth with rms roughness lower than 4 nm for both substrates.

Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

Science.gov (United States)

Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

2008-05-01

Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

International Nuclear Information System (INIS)

Gedelian, Cynthia A.; Rajanna, K.C.; Premerlani, Brian; Lu, Toh-Ming

2014-01-01

Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

Plasmon resonance enhanced temperature-dependent photoluminescence of Si-V centers in diamond

Energy Technology Data Exchange (ETDEWEB)

Cheng, Shaoheng [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Song, Jie; Wang, Qiliang; Liu, Junsong; Li, Hongdong, E-mail: hdli@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Zhang, Baolin [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2015-11-23

Temperature dependent optical property of diamond has been considered as a very important factor for realizing high performance diamond-based optoelectronic devices. The photoluminescence feature of the zero phonon line of silicon-vacancy (Si-V) centers in Si-doped chemical vapor deposited single crystal diamond (SCD) with localized surface plasmon resonance (LSPR) induced by gold nanoparticles has been studied at temperatures ranging from liquid nitrogen temperature to 473 K, as compared with that of the SCD counterpart in absence of the LSPR. It is found that with LSPR the emission intensities of Si-V centers are significantly enhanced by factors of tens and the magnitudes of the redshift (width) of the emissions become smaller (narrower), in comparison with those of normal emissions without plasmon resonance. More interestingly, these strong Si-V emissions appear remarkably at temperatures up to 473 K, while the spectral feature was not reported in previous studies on the intrinsic Si-doped diamonds when temperatures are higher than room temperature. These findings would lead to reaching high performance diamond-based devices, such as single photon emitter, quantum cryptography, biomarker, and so forth, working under high temperature conditions.

Nuclear Pasta at Finite Temperature with the Time-Dependent Hartree-Fock Approach

Science.gov (United States)

Schuetrumpf, B.; Klatt, M. A.; Iida, K.; Maruhn, J. A.; Mecke, K.; Reinhard, P.-G.

2016-01-01

We present simulations of neutron-rich matter at sub-nuclear densities, like supernova matter. With the time-dependent Hartree-Fock approximation we can study the evolution of the system at temperatures of several MeV employing a full Skyrme interaction in a periodic three-dimensional grid [1]. The initial state consists of α particles randomly distributed in space that have a Maxwell-Boltzmann distribution in momentum space. Adding a neutron background initialized with Fermi distributed plane waves the calculations reflect a reasonable approximation of astrophysical matter. The matter evolves into spherical, rod-like, connected rod-like and slab-like shapes. Further we observe gyroid-like structures, discussed e.g. in [2], which are formed spontaneously choosing a certain value of the simulation box length. The ρ-T-map of pasta shapes is basically consistent with the phase diagrams obtained from QMD calculations [3]. By an improved topological analysis based on Minkowski functionals [4], all observed pasta shapes can be uniquely identified by only two valuations, namely the Euler characteristic and the integral mean curvature. In addition we propose the variance in the cell-density distribution as a measure to distinguish pasta matter from uniform matter.

Nuclear Pasta at Finite Temperature with the Time-Dependent Hartree-Fock Approach

International Nuclear Information System (INIS)

Schuetrumpf, B; Maruhn, J A; Klatt, M A; Mecke, K; Reinhard, P-G; Iida, K

2016-01-01

We present simulations of neutron-rich matter at sub-nuclear densities, like supernova matter. With the time-dependent Hartree-Fock approximation we can study the evolution of the system at temperatures of several MeV employing a full Skyrme interaction in a periodic three-dimensional grid [1].The initial state consists of α particles randomly distributed in space that have a Maxwell-Boltzmann distribution in momentum space. Adding a neutron background initialized with Fermi distributed plane waves the calculations reflect a reasonable approximation of astrophysical matter.The matter evolves into spherical, rod-like, connected rod-like and slab-like shapes. Further we observe gyroid-like structures, discussed e.g. in [2], which are formed spontaneously choosing a certain value of the simulation box length. The ρ-T-map of pasta shapes is basically consistent with the phase diagrams obtained from QMD calculations [3]. By an improved topological analysis based on Minkowski functionals [4], all observed pasta shapes can be uniquely identified by only two valuations, namely the Euler characteristic and the integral mean curvature.In addition we propose the variance in the cell-density distribution as a measure to distinguish pasta matter from uniform matter. (paper)

50 CFR 259.34 - Minimum and maximum deposits; maximum time to deposit.

Science.gov (United States)

2010-10-01

... B objective. A time longer than 10 years, either by original scheduling or by subsequent extension... OCEANIC AND ATMOSPHERIC ADMINISTRATION, DEPARTMENT OF COMMERCE AID TO FISHERIES CAPITAL CONSTRUCTION FUND...) Minimum annual deposit. The minimum annual (based on each party's taxable year) deposit required by the...

Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

Energy Technology Data Exchange (ETDEWEB)

Piallat, Fabien, E-mail: fabien.piallat@gmail.com [STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles (France); CEA, LETI, Campus Minatec, F-38054 Grenoble (France); LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble (France); Gassilloud, Remy [CEA, LETI, Campus Minatec, F-38054 Grenoble (France); Caubet, Pierre [STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles (France); Vallée, Christophe [LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble (France)

2016-09-15

Due to the reduction of the thickness of the layers used in the advanced technology nodes, there is a growing importance of the surface phenomena in the definition of the general properties of the materials. One of the least controlled and understood phenomenon is the oxidation of metals after deposition, at the vacuum break. In this study, the influence of the sample temperature at vacuum break on the oxidation level of TiN deposited by metalorganic chemical vapor deposition is investigated. TiN resistivity appears to be lower for samples which underwent vacuum break at high temperature. Using X-ray photoelectron spectrometry analysis, this change is correlated to the higher oxidation of the TiN layer. Moreover, angle resolved XPS analysis reveals that higher is the temperature at the vacuum break, higher is the surface oxidation of the sample. This surface oxidation is in turn limiting the diffusion of oxygen in the volume of the layer. Additionally, evolution of TiN layers resistivity was monitored in time and it shows that resistivity increases until a plateau is reached after about 10 days, with the lowest temperature at vacuum break resulting in the highest increase, i.e., the resistivity of the sample released to atmosphere at high temperature increased by a factor 1.7 whereas the resistivity of the sample cooled down under vacuum temperature increased by a factor 2.7.

The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu{sup 2+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Nyenge, R.L. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Physics Department, Kenyatta University, P.O. Box 43844-0100, Nairobi (Kenya); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

2016-01-01

The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu{sup 2+}. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Science.gov (United States)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

International Nuclear Information System (INIS)

Deb, K.; Bera, A.; Saha, B.; Bhowmik, K. L.; Chattopadhyay, K. K.

2016-01-01

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

Energy Technology Data Exchange (ETDEWEB)

Deb, K.; Bera, A.; Saha, B., E-mail: biswajit.physics@gmail.com [Department of Physics, National Institute of Technology Agartala, Jirania, West Tripura 799046 (India); Bhowmik, K. L. [Department of Physics, National Institute of Technology Agartala, Jirania, West Tripura 799046 (India); Department of Chemistry, Bir Bikram Memorial College, Agartala, West Tripura 799004 (India); Chattopadhyay, K. K. [Department of Physics, Jadavpur University, Kolkata 700 032 (India)

2016-05-23

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

Science.gov (United States)

Deb, K.; Bhowmik, K. L.; Bera, A.; Chattopadhyay, K. K.; Saha, B.

2016-05-01

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

Computer Simulation of Temperature Parameter for Diamond Formation by Using Hot-Filament Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Chang Weon Song

2017-12-01

Full Text Available To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in a hot filament chemical vapor deposition (HF-CVD system. In this study, the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16, and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software ANSYS-FLUENT. To account for radiative heat-transfer in the HF-CVD reactor, the discrete ordinate (DO model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512–2802 K and 1076–1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with the experimental temperatures measured using a two-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

Synthesizing the Nanocrytalline Cobalt-Iron Coating Through The Electrodeposition Process With Different Time Deposition

Science.gov (United States)

Rozlin Nik Masdek, Nik; Sorfian Hafiz Mansor, Mohd; Salleh, Zuraidah; Hyie, Koay Mei

2018-03-01

In the engineering world, electrodeposition or electroplating has become the most popular method of surface coating in improving corrosion behavior and mechanical properties of material. Therefore in this study, CoFe nanoparticle protective coating has been synthesized on the mild steel washer using electrodeposition method. The electrodeposition was conducted in the acidic environment with the pH value range from 1 to 2 with the controlled temperature of 50°C. The influence of deposition time (30, 60, 90 minutes) towards characteristic and properties such as particle size, surface morphology, corrosion behavior, and microhardness were studied in this investigation. Several results can be obtained by doing this experiment and testing. First, the surface morphology of Cobalt Iron (CoFe) on the electrodeposited mild steel washer are obtained. In addition, the microhardness of the mild steel washer due to the different deposition time are determined. Next, the observation on the difference in the grain size of CoFe that has been electrodeposited on the mild steel plate is made. Last but not least, the corrosion behavior was investigated. CoFe nanoparticles deposited for 30 minutes produced the smallest particle size and the highest microhardness of 86.17 and 236.84 HV respectively. The CoFe nanoparticles also exhibit the slowest corrosion rate at 30 minutes as compared to others. The crystalline size also increases when the time deposition is increased. The sample with 30 minute depositon time indicate the smallest crystalline size which is 15nm. The decrement of deposition time plays an important role in synthesizing CoFe nanoparticles with good corrosion resistance and microhardness. CoFe nanoparticles obtained at 30 minutes shows high corrosion resistance compared to others. In a nutshell, it was observed that the decrement of deposition time improved mechanical and corrosion properties of CoFe nanoparticles.

Exponential temperature dependence of the critical transport current in Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Yom, S.S.; Hahn, T.S.; Kim, Y.H.; Chu, H.; Choi, S.S.

1989-01-01

We have measured the critical currents in rf-sputtered YBa 2 Cu 3 O/sub 7-x/ thin films deposited on polycrystalline yttria-stabilized zirconia substrates as a function of temperature down to 10 K. The dependence of the granular films at low temperature indicated exponential behavior which is similar to the superconductor-normal metal-superconductor (S-N-S) type tunneling junctions. For the films with a grain size of approximately 1 μm, we observed two exponential decay constants, which suggest that Josephson junctions limiting the transport critical current are possible both at the grain boundaries and at twin boundaries

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

International Nuclear Information System (INIS)

Laatar, F.; Harizi, A.; Smida, A.; Hassen, M.; Ezzaouia, H.

2016-01-01

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E_o), dispersion energy (E_d), and static refractive index (n_o) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ_e) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Low-temperature atomic layer deposition of MoS{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Jurca, Titel; Wang, Binghao; Tan, Jeffrey M.; Lohr, Tracy L.; Marks, Tobin J. [Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL (United States); Moody, Michael J.; Henning, Alex; Emery, Jonathan D.; Lauhon, Lincoln J. [Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, IL (United States)

2017-04-24

Wet chemical screening reveals the very high reactivity of Mo(NMe{sub 2}){sub 4} with H{sub 2}S for the low-temperature synthesis of MoS{sub 2}. This observation motivated an investigation of Mo(NMe{sub 2}){sub 4} as a volatile precursor for the atomic layer deposition (ALD) of MoS{sub 2} thin films. Herein we report that Mo(NMe{sub 2}){sub 4} enables MoS{sub 2} film growth at record low temperatures - as low as 60 C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Observing the temperature dependent transition of the GP2 peptide using terahertz spectroscopy.

Directory of Open Access Journals (Sweden)

Yiwen Sun

Full Text Available The GP2 peptide is derived from the Human Epidermal growth factor Receptor 2 (HER2/nue, a marker protein for breast cancer present in saliva. In this paper we study the temperature dependent behavior of hydrated GP2 at terahertz frequencies and find that the peptide undergoes a dynamic transition between 200 and 220 K. By fitting suitable molecular models to the frequency response we determine the molecular processes involved above and below the transition temperature (T(D. In particular, we show that below T(D the dynamic transition is dominated by a simple harmonic vibration with a slow and temperature dependent relaxation time constant and that above T(D, the dynamic behavior is governed by two oscillators, one of which has a fast and temperature independent relaxation time constant and the other of which is a heavily damped oscillator with a slow and temperature dependent time constant. Furthermore a red shifting of the characteristic frequency of the damped oscillator was observed, confirming the presence of a non-harmonic vibration potential. Our measurements and modeling of GP2 highlight the unique capabilities of THz spectroscopy for protein characterization.

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

International Nuclear Information System (INIS)

Zhao Wan-Ru; Zhang Jiang-Yong; Zhang Bao-Ping; Weng Guo-En; Liang Ming-Ming; Li Zeng-Cheng; Liu Jian-Ping

2014-01-01

Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence (PL) measurements. As temperature increases (15–300 K), the PL peak energy shows an anomalous V-shaped (redshift—blueshift) variation instead of an S-shaped (redshift—blueshift—redshift) variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells (MQWs). The PL full width at half maximum (FWHM) also shows a V-shaped (decrease—increase) variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MQWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MQWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9 meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content

Time-dependent local potential in a Tomonaga-Luttinger liquid

Science.gov (United States)

Kamar, Naushad Ahmad; Giamarchi, Thierry

2017-12-01

We study the energy deposition in a one-dimensional interacting quantum system with a pointlike potential modulated in amplitude. The pointlike potential at position x =0 has a constant part and a small oscillation in time with a frequency ω . We use bosonization, renormalization group, and linear response theory to calculate the corresponding energy deposition. It exhibits a power law behavior as a function of the frequency that reflects the Tomonaga-Luttinger liquid (TLL) nature of the system. Depending on the interactions in the system, characterized by the TLL parameter K of the system, a crossover between weak and strong coupling for the backscattering due to the potential is possible. We compute the frequency scale ω*, at which such crossover exists. We find that the energy deposition due to the backscattering shows different exponents for K >1 and K <1 . We discuss possible experimental consequences, in the context of cold atomic gases, of our theoretical results.

Vapor-deposited non-crystalline phase vs ordinary glasses and supercooled liquids: Subtle thermodynamic and kinetic differences

International Nuclear Information System (INIS)

Bhattacharya, Deepanjan; Sadtchenko, Vlad

2015-01-01

Vapor deposition of molecules on a substrate often results in glassy materials of high kinetic stability and low enthalpy. The extraordinary properties of such glasses are attributed to high rates of surface diffusion during sample deposition, which makes it possible for constituents to find a configuration of much lower energy on a typical laboratory time scale. However, the exact nature of the resulting phase and the mechanism of its formation are not completely understood. Using fast scanning calorimetry technique, we show that out-of-equilibrium relaxation kinetics and possibly the enthalpy of vapor-deposited films of toluene and ethylbenzene, archetypical fragile glass formers, are distinct from those of ordinary supercooled phase even when the deposition takes place at temperatures above the ordinary glass softening transition temperatures. These observations along with the absolute enthalpy dependences on deposition temperatures support the conjecture that the vapor-deposition may result in formation of non-crystalline phase of unique structural, thermodynamic, and kinetic properties

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

International Nuclear Information System (INIS)

Araiza, J J; Sanchez, O

2009-01-01

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr 3 N 4 (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, L.; Schmidt, J.; Wagner, T.A.; Bergmann, R.B. [Stuttgart Univ. (Germany). Inst. of Physical Electronics

2001-07-01

Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 {mu}m, obtained at a record deposition rate of 0.8 {mu}m/min and a deposition temperature of 650{sup o}C with a prebake at 810{sup o}C. A thin-film Si solar cell with a 20-{mu}m-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps. (author)

Magnetic behavior of NiCu nanowire arrays: Compositional, geometry and temperature dependence

International Nuclear Information System (INIS)

Palmero, E. M.; Bran, C.; Real, R. P. del; Vázquez, M.; Magén, C.

2014-01-01

Arrays of Ni 100−x Cu x nanowires ranging in composition 0 ≤ x ≤ 75, diameter from 35 to 80 nm, and length from 150 nm to 28 μm have been fabricated by electrochemical co-deposition of Ni and Cu into self-ordered anodic aluminum oxide membranes. As determined by X-ray diffraction and Transmission Electron Microscopy, the crystalline structure shows fcc cubic symmetry with [111] preferred texture and preferential Ni or Cu lattice depending on the composition. Their magnetic properties such as coercivity and squareness have been determined as a function of composition and geometry in a Vibrating Sample Magnetometer in the temperature range from 10 to 290 K for applied magnetic fields parallel and perpendicular to the nanowires axis. Addition of Cu into the NiCu alloy up to 50% enhances both parallel coercivity and squareness. For the higher Cu content, these properties decrease and the magnetization easy axis becomes oriented perpendicular to the wires. In addition, coercivity and squareness increase by decreasing the diameter of nanowires which is ascribed to the increase of shape anisotropy. The temperature dependent measurements reflect a complex behavior of the magnetic anisotropy as a result of energy contributions with different evolution with temperature.

Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

Science.gov (United States)

Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

2018-05-01

Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

Memory-dependent derivatives theory of thermo-viscoelasticity involving two-temperature

Energy Technology Data Exchange (ETDEWEB)

Ezzat, M. A. [Alexandria University, Alexandria (Egypt); El-Bary, A. A. [Arab Academy for Science and Technology, Alexandria (Egypt)

2015-10-15

A new model of two-temperature generalized thermo-viscoelasticity theory based on memory-dependent derivative is constructed. The equations of the new model are applied to one-dimensional problem of a half-space. The bounding surface is taken to be traction free and subjected to a time dependent thermal shock. Laplace transforms technique is used. A direct approach is applied to obtain the exact formulas of heat flux, temperature, stresses, displacement and strain in the Laplace transform domain. Application is employed to our problem to get the solution in the complete form. The considered variables are presented graphically and discussions are made.

Crossing regimes of temperature dependence in animal movement.

Science.gov (United States)

Gibert, Jean P; Chelini, Marie-Claire; Rosenthal, Malcolm F; DeLong, John P

2016-05-01

A pressing challenge in ecology is to understand the effects of changing global temperatures on food web structure and dynamics. The stability of these complex ecological networks largely depends on how predator-prey interactions may respond to temperature changes. Because predators and prey rely on their velocities to catch food or avoid being eaten, understanding how temperatures may affect animal movement is central to this quest. Despite our efforts, we still lack a mechanistic understanding of how the effect of temperature on metabolic processes scales up to animal movement and beyond. Here, we merge a biomechanical approach, the Metabolic Theory of Ecology and empirical data to show that animal movement displays multiple regimes of temperature dependence. We also show that crossing these regimes has important consequences for population dynamics and stability, which depend on the parameters controlling predator-prey interactions. We argue that this dependence upon interaction parameters may help explain why experimental work on the temperature dependence of interaction strengths has so far yielded conflicting results. More importantly, these changes in the temperature dependence of animal movement can have consequences that go well beyond ecological interactions and affect, for example, animal communication, mating, sensory detection, and any behavioral modality dependent on the movement of limbs. Finally, by not taking into account the changes in temperature dependence reported here we might not be able to properly forecast the impact of global warming on ecological processes and propose appropriate mitigation action when needed. © 2016 John Wiley & Sons Ltd.

Modelling impacts of temperature, and acidifying and eutrophying deposition on DOC trends

Science.gov (United States)

Sawicka, Kasia; Rowe, Ed; Evans, Chris; Monteith, Don; Vanguelova, Elena; Wade, Andrew; Clark, Joanna

2017-04-01

Surface water dissolved organic carbon (DOC) concentrations in large parts of the northern hemisphere have risen over the past three decades, raising concern about enhanced contributions of carbon to the atmosphere and seas and oceans. The effect of declining acid deposition has been identified as a key control on DOC trends in soil and surface waters, since pH and ionic strength affect sorption and desorption of DOC. However, since DOC is derived mainly from recently-fixed carbon, and organic matter decomposition rates are considered sensitive to temperature, uncertainty persists regarding the extent to the relative importance of different drivers that affect these upward trends. We ran the dynamic model MADOC (Model of Acidity and Soil Organic Carbon) for a range of UK soils (podzols, gleysols and peatland), for which the time-series were available, to consider the likely relative importance of decreased deposition of sulphate and chloride, accumulation of reactive N, and higher temperatures, on DOC production in different soils. Modelled patterns of DOC change generally agreed favourably with measurements collated over 10-20 years, but differed markedly between sites. While the acidifying effect of sulphur deposition appeared to be the predominant control on the observed soil water DOC trends in all the soils considered other than a blanket peat, the model suggested that over the long term, the effects of nitrogen deposition on N-limited soils may have been sufficient to elevate the DOC recovery trajectory significantly. The second most influential cause of rising DOC in the model simulations was N deposition in ecosystems that are N-limited and respond with stimulated plant growth. Although non-marine chloride deposition made some contribution to acidification and recovery, it was not amongst the main drivers of DOC change. Warming had almost no effect on modelled historic DOC trends, but may prove to be a significant driver of DOC in future via its influence

Temperature dependence of autoxidation of perilla oil and tocopherol degradation.

Science.gov (United States)

Wang, Seonyeong; Hwang, Hyunsuk; Yoon, Sukhoo; Choe, Eunok

2010-08-01

Temperature dependence of the autoxidation of perilla oil and tocopherol degradation was studied with corn oil as a reference. The oils were oxidized in the dark at 20, 40, 60, and 80 degrees C. Oil oxidation was determined by peroxide and conjugated dienoic acid values. Tocopherols in the oils were quantified by HPLC. The oxidation of both oils increased with oxidation time and temperature. Induction periods for oil autoxidation decreased with temperature, and were longer in corn oil than in perilla oil, indicating higher sensitivity of perilla oil to oxidation. However, time lag for tocopherol degradation was longer in perilla oil, indicating higher stability of tocopherols in perilla oil than in corn oil. Activation energies for oil autoxidation and tocopherol degradation were higher in perilla oil (23.9 to 24.2, 9.8 kcal/mol, respectively) than in corn oil (12.5 to 15.8, 8.8 kcal/mol, respectively) indicating higher temperature-dependence in perilla oil. Higher stability of tocopherols in perilla oil was highly related with polyphenols. The study suggests that more careful temperature control is required to decrease the autoxidation of perilla oil than that of corn oil, and polyphenols contributed to the oxidative stability of perilla oil by protecting tocopherols from degradation, especially at the early stage of oil autoxidation.

Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence

Science.gov (United States)

Bouzourâa, M.-B.; Battie, Y.; Dalmasso, S.; Zaïbi, M.-A.; Oueslati, M.; En Naciri, A.

2018-05-01

We report the temperature dependence of the dielectric function, the exciton binding energy and the electronic transitions of crystallized ZnO thin film using spectroscopic ellipsometry (SE) and photoluminescence (PL). ZnO layers were prepared by sol-gel method and deposited on crystalline silicon (Si) by spin coating technique. The ZnO optical properties were determined between 300 K and 620 K. Rigorous study of optical responses was achieved in order to demonstrate the quenching exciton of ZnO as a function of temperature. Numerical technique named constrained cubic splines approximation (CCS), Tauc-Lorentz (TL) and Tanguy dispersion models were selected for the ellipsometry data modeling in order to obtain the dielectric function of ZnO. The results reveals that the exciton bound becomes widely flattening at 470 K on the one hand, and on the other that the Tanguy dispersion law is more appropriate for determining the optical responses of ZnO thin film in the temperature range of 300 K-420 K. The Tauc-Lorentz, for its part, reproduces correctly the ZnO dielectric function in 470 K-620 K temperature range. The temperature dependence of the electronic transition given by SE and PL shows that the exciton quenching was observed in 420 K-∼520 K temperature range. This quenching effect can be explained by the equilibrium between the Coulomb force of exciton and its kinetic energy in the film. The kinetic energy was found to induce three degrees of freedom of the exciton.

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Beryllium-7 and 210Pb atmospheric deposition measured in moss and dependence on cumulative precipitation

International Nuclear Information System (INIS)

Krmar, M.; Mihailović, D.T.; Arsenić, I.; Radnović, D.; Pap, I.

2016-01-01

This paper focuses on analysis of the time series of 7 Be and 210 Pb activity measured in moss, and the amount, as well as duration of precipitation, to gain a better understanding of the possible relationships between airborne radionuclide deposition and precipitation. Here we consider whether the amount of these airborne radionuclides in moss samples is a cumulative measure of radionuclide deposition and decay, and a new approach for analyses of the relationships between precipitation and moss activity concentrations is suggested. Through these analyses it was shown that comparison of cumulative activity measured at one location using moss, normalized by values of cumulative amount or duration of precipitation, showed different regimes of airborne radionuclide deposition. - Graphical abstract: Correlation between cumulative activity of 7 Be and 210 Pb measured in moss samples normalized by the cumulative precipitation. - Highlights: • Use of mosses in measurement of airborne radionuclides deposition was investigated • Prior work indicated 7 Be and 210 Pb activities were not correlated with precipitation • This is unusual since radionuclides moss tissues depends on depositional fluxes. • A new method for study of 7 Be and 210 Pb depositional dynamics was developed • Different seasonal regimes of 7 Be deposition are more noticeable in new technique

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

Energy Technology Data Exchange (ETDEWEB)

Laatar, F., E-mail: fakher8laatar@gmail.com [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Harizi, A. [Photovoltaic and Semiconductor Materials Laboratory, Engineering Industrial Department, ENIT, Tunis El Manar University, BP 37, Le Belvédère, 1002 Tunis (Tunisia); Smida, A. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-06-15

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E{sub o}), dispersion energy (E{sub d}), and static refractive index (n{sub o}) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ{sub e}) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Chemically vapor-deposited tungsten: its high temperature strength and ductility

International Nuclear Information System (INIS)

Bryant, W.A.

1977-01-01

The high temperature tensile ductility (as measured by total elongation normal to the growth direction) of chemically vapor-deposited tungsten was found to be significantly greater than previously reported. A correlation was found between ductility and void content. However, voids were found to have essentially no effect on the high temperature strength of this material, which is considerably weaker than powder metallurgy tungsten. (Auth.)

Low-temperature atomic layer deposition of MgO thin films on Si

International Nuclear Information System (INIS)

Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

2013-01-01

Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

Bath temperature effect on magnetoelectric performance of Ni-lead zirconate titanate-Ni laminated composites synthesized by electroless deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, W. [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Wang, Y.G., E-mail: yingang.wang@nuaa.edu.c [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Bi, K. [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2011-03-15

Magnetoelectric (ME) Ni-lead zirconate titanate-Ni laminated composites have been prepared by electroless deposition at various bath temperatures. The structure of the Ni layers deposited at various bath temperatures was characterized by X-ray diffraction, and microstructures were investigated by transmission electron microscopy. The magnetostrictive coefficients were measured by means of a resistance strain gauge. The transverse ME voltage coefficient {alpha}{sub E,31} was measured with the magnetic field applied parallel to the sample plane. The deposition rate of Ni increases with bath temperature. Ni layer with smaller grain size is obtained at higher bath temperature and shows higher piezomagnetic coefficient, promoting the ME effect of corresponding laminated composites. It is advantageous to increase the bath temperature, while trying to avoid the breaking of bath constituents. - Research Highlights: Laminated composites without interlayer are prepared by electroless deposition. Bath temperature affects the grain size of the deposited Ni layers. Higher bath temperature is beneficial to obtain stronger ME response.

Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Seok Hwan Jeong

2018-03-01

Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Characterization and temperature controlling property of TiAlN coatings deposited by reactive magnetron co-sputtering

International Nuclear Information System (INIS)

Chen, J.T.; Wang, J.; Zhang, F.; Zhang, G.A.; Fan, X.Y.; Wu, Z.G.; Yan, P.X.

2009-01-01

Titanium aluminum nitride (TiAlN) ternary coating is a potential material which is expected to be applied on satellite for thermal controlling. In order to investigate thermal controlling property, TiAlN coatings were deposited on Si wafers with different N 2 and Ar flux ratio by reactive magnetron co-sputtering. The structure, morphology, chemical composition and optical reflectance are investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atom force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and spectrophotometer, respectively. The orientation of the coatings depends on the N 2 /Ar flux ratio. The coatings deposited with N 2 /Ar ratio of 10, 30 and 60% show the cubic-TiN [2 2 0] preferred orientation and the coating deposited with N 2 /Ar ratio of 100% exhibits the phase of hexagonal-AlN and cubic-TiN. The surface of the coatings becomes more compact and smoother with the N 2 /Ar ratios increase. XPS spectrum indicates that the oxides (TiO 2 and Al 2 O 3 ), oxynitride (TiN x O y ) and nitrides (TiN and AlN x ) appear at the surface of the coatings. Ignoring internal power, the optimum equilibrium temperature of TiAlN coatings is 18 deg. C and the equilibrium temperature after heat-treated has slight change, which provides the prospective application on thermal controlling

Temperature Dependence of Factors Controlling Isoprene Emissions

Science.gov (United States)

Duncan, Bryan N.; Yoshida, Yasuko; Damon, Megan R.; Douglass, Anne R.; Witte, Jacquelyn C.

2009-01-01

We investigated the relationship of variability in the formaldehyde (HCHO) columns measured by the Aura Ozone Monitoring Instrument (OMI) to isoprene emissions in the southeastern United States for 2005-2007. The data show that the inferred, regional-average isoprene emissions varied by about 22% during summer and are well correlated with temperature, which is known to influence emissions. Part of the correlation with temperature is likely associated with other causal factors that are temperature-dependent. We show that the variations in HCHO are convolved with the temperature dependence of surface ozone, which influences isoprene emissions, and the dependence of the HCHO column to mixed layer height as OMI's sensitivity to HCHO increases with altitude. Furthermore, we show that while there is an association of drought with the variation in HCHO, drought in the southeastern U.S. is convolved with temperature.

Temperature dependence of radiation chemistry of polymers

International Nuclear Information System (INIS)

Garrett, R.W.; Hill, D.J.T.; Le, T.T.; Milne, K.A.; O'Donnell, J.H.; Perera, S.M.C.; Pomery, P.J.

1990-01-01

Chemical reactions which occur during radiolysis of polymers usually show an increase in rate with increasing temperature that can be described by an Arrhenius relationship. The magnitude of the activation energy can vary widely and is affected by physical, as well as chemical, factors. Different reaction rates may be expected in crystalline and amorphous morphologies, and in glassy and rubbery regions. The temperature dependence of radiolysis reactions can be expected to show discontinuities at the glass and melting transitions, T g and T m . The ceiling temperature, T c , for polymerization/depolymerization will also affect the rate of degradation, especially for depropagation to monomer. The temperature for this effect depends on the molecular structure of the polymer. The temperature dependence of free radical reactions can be studied by cryogenic trapping and ESR spectroscopy during thermal profiling. Increased degradation rates at high dose rates can be due to increased temperatures resulting from energy absorption

Dependence of silicon carbide coating properties on deposition parameters: preliminary report

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1980-05-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide, which acts as a pressure vessel and provides containment of metallic fission products. The silicon carbide (SiC) is deposited by the thermal decomposition of methyltrichlorosilane (CH 3 SiCl 3 or MTS) in an excess of hydrogen. The purpose of the current study is to determine how the deposition variables affect the structure and properties of the SiC layer

Temperature dependence of coherence in transmon qubits

Energy Technology Data Exchange (ETDEWEB)

Schloer, Steffen; Braumueller, Jochen; Lukashenko, Oleksandr; Rotzinger, Hannes; Weides, Martin; Ustinov, Alexey V. [Physikalisches Institut, KIT, Karlsruhe (Germany); Sandberg, Martin; Vissers, Michael R.; Pappas, David P. [NIST, Boulder, CO (United States)

2015-07-01

Superconducting qubits are a promising field of research, not only with respect to quantum computing but also as highly sensitive detectors and due to the possibility of using them to study fundamental implications of quantum mechanics. The requirements for qubits that can be used as building blocks in a potential quantum computer are challenging. Modern superconducting qubits like the transmon are strong candidates for achieving these goals. The main challenge here is to increase the coherence of prepared quantum states. Here, we experimentally investigate the influence of temperature variation on relaxation and dephasing of a transmon qubit. Our goal is to understand decoherence mechanisms in material optimized circuits. Aiming at longer coherence, in this case peaking over 50 μs for T{sub 1} and T{sub 2}, our samples are fabricated at NIST using two different materials. Low-loss TiN was used for the shunt capacitance as well as the resonator, combined with shadow evaporated ultra-small Al-AlO{sub x}-Al Josephson junctions. We will present temperature-dependent data on qubit relaxation and dephasing times as well as power spectra. Our data will be compared to previously obtained temperature dependent data for other types of qubits.

Time-dependent Hartree approximation and time-dependent harmonic oscillator model

International Nuclear Information System (INIS)

Blaizot, J.P.

1982-01-01

We present an analytically soluble model for studying nuclear collective motion within the framework of the time-dependent Hartree (TDH) approximation. The model reduces the TDH equations to the Schroedinger equation of a time-dependent harmonic oscillator. Using canonical transformations and coherent states we derive a few properties of the time-dependent harmonic oscillator which are relevant for applications. We analyse the role of the normal modes in the time evolution of a system governed by TDH equations. We show how these modes couple together due to the anharmonic terms generated by the non-linearity of the theory. (orig.)

Radiation induced time dependent attenuation in a fiber

International Nuclear Information System (INIS)

Kelly, R.E.; Lyons, P.B.; Looney, L.D.

1985-01-01

Characteristics describing the time dependent attenuation coefficient of an optical fiber during and following a very short and intense radiation pulse are analyzed. This problem is important for transmission applications when the fiber is subjected to gamma, electron, or neutron beams. Besides time, the attenuation coefficient is a function of temperature, dose rate, dose, nature of the radiation (n, e, γ), fiber composition and purity, pre-existing solid state defects, and wavelength of the transmitted signal. The peak attenuation for a given fiber is mainly determined by the dose rate and pulse length, but temperature and strain (or athermal) annealing also contribute to a partial recovery during the pulse duration. The peak attenuation per unit dose appears to be smaller at high doses, perhaps caused by particle track overlap, which produces a saturation effect. After pulse termination, the attenuation coefficient tends to recover towards its pre-radiation value at different rates, depending upon the factors mentioned above. In particular, ionized electrons relax back to the positive lattice ions at a rate which depends upon initial separation distance and temperature. The initial separation distance is a function of beam energy. Some electrons will encounter a trap in the lattice and may recombine by quantum mechanical tunneling or be removed by photons (hence, absorption). Besides ionization, radiation may induce lattice displacements which in turn produce additional absorption centers. The displacement contribution has a different time constant than that associated with ionization. These topics, as they influence fiber characteristics, are discussed, along with supporting experimental data

Evolution of magnetic and microstructural properties of thick sputtered NdFeB films with processing temperature

Energy Technology Data Exchange (ETDEWEB)

Walther, A. [Institut Neel, CNRS-UJF, 25 rue de Martyrs, 38042 Grenoble (France); CEA Leti - MINATEC, 17 rue des Martyrs, 38054 Grenoble (France); Khlopkov, K. [IFW Dresden, Institute of Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany); Gutfleisch, O. [IFW Dresden, Institute of Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany); Givord, D. [Institut Neel, CNRS-UJF, 25 rue de Martyrs, 38042 Grenoble (France); Dempsey, N.M. [Institut Neel, CNRS-UJF, 25 rue de Martyrs, 38042 Grenoble (France)]. E-mail: nora.dempsey@grenoble.cnrs.fr

2007-09-15

Ta (100 nm)/NdFeB (5 {mu}m)/Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate {approx}18 {mu}m/h). A 2-step procedure was used: deposition at temperatures up to 400 deg. C followed by ex-situ annealing at higher temperatures. Post-deposition annealing temperatures above 650 deg. C are needed to develop high values of coercivity. The duration of the annealing time is more critical in anisotropic samples deposited onto heated substrates than in isotropic samples deposited at lower temperatures. For a given set of annealing conditions (750 deg. C/10'), high heating rates ({>=}2000 deg. C/h) favour high coercivity in both isotropic and anisotropic films. The shape and size of Nd{sub 2}Fe{sub 14}B grains depend strongly on the heating rate.

Dependence of hardness and impact energy on cooling time Δt8/5and temperature for S960QL

OpenAIRE

Samardžić, I.; Dunđer, M.; Vuherer, T.

2015-01-01

The paper deals with research into dependence of hardness and impact energy of thermal cycle simulated specimens of fine-grained structural steel S960QL on cooling time from 800 to 500 °C and on tested temperature. Results were obtained by measuring hardness of HV 10 and by experimental testing of Charpy notched tubes on instrumented Charpy hammer. Total impact energy, initiation energy and fracture propagation energy needed for occurrence of fracture is also elaborated. Key words:

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Energy Technology Data Exchange (ETDEWEB)

Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

2016-01-15

It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

Vacuum radiation induced by time dependent electric field

Directory of Open Access Journals (Sweden)

Bo Zhang

2017-04-01

Full Text Available Many predictions of new phenomena given by strong field quantum electrodynamics (SFQED will be tested on next generation multi-petawatt laser facilities in the near future. These new phenomena are basis to understand physics in extremely strong electromagnetic fields therefore have attracted wide research interest. Here we discuss a new SFQED phenomenon that is named as vacuum radiation. In vacuum radiation, a virtual electron loop obtain energy from time dependent external electric field and radiate an entangled photon pair. Features of vacuum radiation in a locally time dependent electric field including spectrum, characteristic temperature, production rate and power are given.

Vacuum radiation induced by time dependent electric field

Energy Technology Data Exchange (ETDEWEB)

Zhang, Bo, E-mail: zhangbolfrc@caep.cn [Department of High Energy Density Physics, Research Center of Laser Fusion, 621900, Mianyang, Sichuan (China); Laboratory of Science and Technology on Plasma Physics, Research Center of Laser Fusion, 621900, Mianyang, Sichuan (China); Zhang, Zhi-meng; Hong, Wei; He, Shu-Kai; Teng, Jian [Department of High Energy Density Physics, Research Center of Laser Fusion, 621900, Mianyang, Sichuan (China); Laboratory of Science and Technology on Plasma Physics, Research Center of Laser Fusion, 621900, Mianyang, Sichuan (China); Gu, Yu-qiu, E-mail: yqgu@caep.cn [Department of High Energy Density Physics, Research Center of Laser Fusion, 621900, Mianyang, Sichuan (China); Laboratory of Science and Technology on Plasma Physics, Research Center of Laser Fusion, 621900, Mianyang, Sichuan (China)

2017-04-10

Many predictions of new phenomena given by strong field quantum electrodynamics (SFQED) will be tested on next generation multi-petawatt laser facilities in the near future. These new phenomena are basis to understand physics in extremely strong electromagnetic fields therefore have attracted wide research interest. Here we discuss a new SFQED phenomenon that is named as vacuum radiation. In vacuum radiation, a virtual electron loop obtain energy from time dependent external electric field and radiate an entangled photon pair. Features of vacuum radiation in a locally time dependent electric field including spectrum, characteristic temperature, production rate and power are given.

Temperature buffer test. Installation of buffer, heaters and instruments in the deposition hole

Energy Technology Data Exchange (ETDEWEB)

Johannesson, Lars-Erik; Sanden, Torbjoern; Aakesson, Mattias [Clay Technology AB, Lund (Sweden); Barcena, Ignacio; Garcia-Sineriz, Jose Luis [Aitemin, Madrid (Spain)

2010-12-15

During 2003 the Temperature Buffer Test was installed in Aespoe Hard Rock Laboratory. Temperature, water pressure, relative humidity, total pressure and displacements etc. are measured in numerous points in the test. Most of the cables from the transducers are led in the deposition hole through slots in the rock surface of the deposition hole in watertight tubes to the data collection system in a container placed in the tunnel close to the deposition hole. This report describes the work with the installations of the buffer, heaters, and instruments and yields a description of the final location of all instruments. The report also contains a description of the materials that were installed and the densities yielded after placement.

Temperature buffer test. Installation of buffer, heaters and instruments in the deposition hole

International Nuclear Information System (INIS)

Johannesson, Lars-Erik; Sanden, Torbjoern; Aakesson, Mattias; Barcena, Ignacio; Garcia-Sineriz, Jose Luis

2010-12-01

During 2003 the Temperature Buffer Test was installed in Aespoe Hard Rock Laboratory. Temperature, water pressure, relative humidity, total pressure and displacements etc. are measured in numerous points in the test. Most of the cables from the transducers are led in the deposition hole through slots in the rock surface of the deposition hole in watertight tubes to the data collection system in a container placed in the tunnel close to the deposition hole. This report describes the work with the installations of the buffer, heaters, and instruments and yields a description of the final location of all instruments. The report also contains a description of the materials that were installed and the densities yielded after placement

Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

International Nuclear Information System (INIS)

Zhu, Junyu; Chen, Ying; Xu, Wenfei; Yang, Jing; Bai, Wei; Wang, Genshui; Duan, Chungang; Tang, Zheng; Tang, Xiaodong

2011-01-01

Polycrystalline La 0.7 Sr 0.3 MnO 3 (LSMO) films were prepared on SiO 2 /Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature ( 0.7 Sr 0.3 MnO 3 films were grown by a modified chemical solution deposition route. → High quality LSMO thin films were prepared directly onto SiO 2 /Si substrates. → Abnormality in resistivity of LSMO films at low temperatures was studied in detail. → The abnormality was mainly attributed to Kondo-like spin dependent scattering.

Microstructure stability of silver electrodeposits at room temperature

International Nuclear Information System (INIS)

Hansen, Karsten; Pantleon, Karen

2008-01-01

In situ quantitative X-ray diffraction analysis was used to investigate the kinetics of microstructure evolution at room temperature (self-annealing) in an electrodeposited silver layer. As a function of time at room temperature the as-deposited nanocrystalline microstructure evolved considerably: orientation-dependent grain growth and changes of the preferred grain orientation occurred. It is demonstrated for the first time that self-annealing occurs for electrodeposited silver layers and, hence, is not a unique feature of copper as often suggested

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Science.gov (United States)

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Temperature dependence of radiation effects in polyethylene

International Nuclear Information System (INIS)

Wu, G; Katsumura, Y.; Kudoh, H.; Morita, Y.; Seguchi, T.

2000-01-01

Temperature dependence of crosslinking and gas evolution under γ-irradiation was studied for high-density and low-density polyethylene samples in the 30-360degC range. It was found that crosslinking was the predominant process up to 300degC and the gel point decreased with increasing temperature. At above 300degC, however, the gel fraction at a given dose decreased rapidly with temperature and the action of radiation turned to enhance polyethylene degradation. Yields of H 2 and hydrocarbon gases increased with temperature and the compositions of hydrocarbons were dose dependent. (author)

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Science.gov (United States)

Hejazi, M. M.; Safari, A.

2011-11-01

This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert's triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child's trap-free square law suggesting the space charge limited current was the dominant mechanism.

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

Science.gov (United States)

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Effect of time and deposition method on quality of phosphonic acid modifier self-assembled monolayers on indium zinc oxide

Energy Technology Data Exchange (ETDEWEB)

Sang, Lingzi [Department of Chemistry and Biochemistry, University of Arizona, Tucson, AZ 85721 (United States); Knesting, Kristina M. [Department of Chemistry, University of Washington, Seattle, WA 98195-1700 (United States); Bulusu, Anuradha [School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Sigdel, Ajaya K. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Giordano, Anthony J.; Marder, Seth R. [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States); Berry, Joseph J. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Graham, Samuel [School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Ginger, David S. [Department of Chemistry, University of Washington, Seattle, WA 98195-1700 (United States); Pemberton, Jeanne E., E-mail: pembertn@email.arizona.edu [Department of Chemistry and Biochemistry, University of Arizona, Tucson, AZ 85721 (United States)

2016-12-15

Highlights: • Deposition of phosphonic acid monolayers on oxides from ethanol solutions occurs by rapid adsorption within 10 s with slower equilibration complete in 48 h. • The slower equilibration step involves molecular reorientation and vacancy filling on the oxide surface. • Soak-free deposition by spray coating and microcontact printing do not provide reproducible, fully-covered, uniform monolayers without substrate etching. • Adjustments to exposure time, substrate temperature, and solution/substrate contact efficiency are necessary to optimize soak-free methods. - Abstract: Phosphonic acid (PA) self-assembled monolayers (SAMs) are utilized at critical interfaces between transparent conductive oxides (TCO) and organic active layers in organic photovoltaic devices (OPVs). The effects of PA deposition method and time on the formation of close-packed, high-quality monolayers is investigated here for SAMs fabricated by solution deposition, micro-contact printing, and spray coating. The solution deposition isotherm for pentafluorinated benzylphosphonic acid (F{sub 5}BnPA) on indium-doped zinc oxide (IZO) is studied using polarization modulation-infrared reflection-absorption spectroscopy (PM-IRRAS) at room temperature as a model PA/IZO system. Fast surface adsorption occurs within the first min; however, well-oriented high-quality SAMs are reached only after ∼48 h, presumably through a continual process of molecular adsorption/desorption and monolayer filling accompanied by molecular reorientation. Two other rapid, soak-free deposition techniques, micro-contact printing and spray coating, are also explored. SAM quality is compared for deposition of phenyl phosphonic acid (PPA), F{sub 13}-octylphosphonic acid (F{sub 13}OPA), and pentafluorinated benzyl phosphonic acid (F{sub 5}BnPA) by solution deposition, micro-contact printing and spray coating using PM-IRRAS. In contrast to micro-contact printing and spray coating techniques, 48–168 h solution

Depth Dependent Relationships between Temperature and Ocean Heterotrophic Prokaryotic Production

KAUST Repository

Lønborg, Christian

2016-06-07

Marine prokaryotes play a key role in cycling of organic matter and nutrients in the ocean. Using a unique dataset (>14,500 samples), we applied a space-for-time substitution analysis to assess the temperature dependence of prokaryotic heterotrophic production (PHP) in epi- (0-200 m), meso- (201-1000 m) and bathypelagic waters (1001-4000 m) of the global ocean. Here, we show that the temperature dependence of PHP is fundamentally different between these major oceanic depth layers, with an estimated ecosystem-level activation energy (E) of 36 ± 7 kJ mol for the epipelagic, 72 ± 15 kJ mol for the mesopelagic and 274 ± 65 kJ mol for the bathypelagic realm. We suggest that the increasing temperature dependence with depth is related to the parallel vertical gradient in the proportion of recalcitrant organic compounds. These Ea predict an increased PHP of about 5, 12, and 55% in the epi-, meso-, and bathypelagic ocean, respectively, in response to a water temperature increase by 1°C. Hence, there is indication that a major thus far underestimated feedback mechanism exists between future bathypelagic ocean warming and heterotrophic prokaryotic activity.

Depth Dependent Relationships between Temperature and Ocean Heterotrophic Prokaryotic Production

KAUST Repository

Lø nborg, Christian; Cuevas, L. Antonio; Reinthaler, Thomas; Herndl, Gerhard J.; Gasol, Josep M.; Moran, Xose Anxelu G.; Bates, Nicholas R.; á lvarez-Salgado, Xosé A.

2016-01-01

Marine prokaryotes play a key role in cycling of organic matter and nutrients in the ocean. Using a unique dataset (>14,500 samples), we applied a space-for-time substitution analysis to assess the temperature dependence of prokaryotic heterotrophic production (PHP) in epi- (0-200 m), meso- (201-1000 m) and bathypelagic waters (1001-4000 m) of the global ocean. Here, we show that the temperature dependence of PHP is fundamentally different between these major oceanic depth layers, with an estimated ecosystem-level activation energy (E) of 36 ± 7 kJ mol for the epipelagic, 72 ± 15 kJ mol for the mesopelagic and 274 ± 65 kJ mol for the bathypelagic realm. We suggest that the increasing temperature dependence with depth is related to the parallel vertical gradient in the proportion of recalcitrant organic compounds. These Ea predict an increased PHP of about 5, 12, and 55% in the epi-, meso-, and bathypelagic ocean, respectively, in response to a water temperature increase by 1°C. Hence, there is indication that a major thus far underestimated feedback mechanism exists between future bathypelagic ocean warming and heterotrophic prokaryotic activity.

Venusian extended ejecta deposits as time-stratigraphic markers

Science.gov (United States)

Izenberg, Noam R.

1992-01-01

Use of impact crater ejects at time-stratigraphic markers was established during lunar geologic mapping efforts. The basic premise is that the deposition of impact ejecta, either by itself or mixed with impact-excavated material, is superimposed on a surface. The deposit becomes an observable, mappable unit produced in a single instant in geologic time. Up to two-thirds of Venus craters exhibit extended ejecta deposits. A reconnaissance survey of 336 craters (about 40 percent of the total population) was conducted. About half the craters examined were located in and around the Beta-Atla-Themis region, and half were spread over the western hemisphere of the planet. The survey was conducted using primarily C1-MIDR images. The preliminary survey shows: (1) of the 336 craters, 223 were found to have extended ejecta deposits. This proportion is higher than that found in other Venus crater databases by up to a factor of 2. (2) 53 percent of all extended ejecta craters were unambiguously superimposed on all volcanic and tectonic units. Crater Annia Faustina's associated parabolic ejecta deposit is clearly superimposed on volcanic flows coming from Gula Mons to the west. Parabola material from Faustina has covered the lava flows, smoothing the surface and reducing its specific backscatter cross section. The stratigraphy implies that the parabola material is the youngest observable unit in the region. (3) 12 percent of extended ejecta deposits are superimposed by volcanic materials. Crater Hwangcini has extended ejecta that has been covered by volcanic flows from a dome field to the northwest, implying that the volcanic units were emplaced subsequent to the ejecta deposit and are the youngest units in the locality. (4) It is difficult to determine the stratigraphic relationships of the remaining extended ejecta deposits in SAR at C1-MIDR resolution. Examination of higher resolution images and application of the other Magellan datasets in systematic manner should resolve

Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

International Nuclear Information System (INIS)

Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi

2004-01-01

We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10 4 , strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized

Adhesion Strength of Biomass Ash Deposits

DEFF Research Database (Denmark)

Laxminarayan, Yashasvi; Jensen, Peter Arendt; Wu, Hao

2016-01-01

. Therefore, timely removal of ash deposits is essential for optimal boiler operation. In order to improve the qualitative and quantitative understanding of deposit shedding in boilers, this study investigates the shear adhesion strength of biomass ash deposits on superheater tubes. Artificial biomass ash...... deposits were prepared on superheater tubes and sintered in an oven at temperatures up to 1000 °C. Subsequently, the deposits were sheared off by an electrically controlled arm, and the corresponding adhesion strength was measured. The results reveal the effect of temperature, ash/deposit composition......, sintering duration, and steel type on the adhesion strength....

Quantum corrections to temperature dependent electrical conductivity of ZnO thin films degenerately doped with Si

International Nuclear Information System (INIS)

Das, Amit K.; Ajimsha, R. S.; Kukreja, L. M.

2014-01-01

ZnO thin films degenerately doped with Si (Si x Zn 1−x O) in the concentrations range of ∼0.5% to 5.8% were grown by sequential pulsed laser deposition on sapphire substrates at 400 °C. The temperature dependent resistivity measurements in the range from 300 to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the 0.5%, 3.8%, and 5.8% doped Si x Zn 1−x O films in the entire temperature range. On the contrary, the Si x Zn 1−x O films with Si concentrations of 1.0%, 1.7%, and 2.0% showed a transition from negative to positive TCR with increasing temperature. These observations were explained using weak localization based quantum corrections to conductivity

Laser surface melting of 10 wt% Mo alloyed hardfacing Stellite 12 plasma transferred arc deposits: Structural evolution and high temperature wear performance

Science.gov (United States)

Dilawary, Shaikh Asad Ali; Motallebzadeh, Amir; Afzal, Muhammad; Atar, Erdem; Cimenoglu, Huseyin

2018-05-01

Laser surface melting (LSM) process has been applied on the plasma transferred arc (PTA) deposited Stellite 12 and 10 wt% Mo alloyed Stellite 12 in this study. Following the LSM process, structural and mechanical property comparison of the LSM'ed surfaces has been made. Hardness of the LSM'ed surfaces was measured as 549 HV and 623 HV for the Stellite 12 and Stellite 12 + 10 wt% Mo deposits, respectively. Despite their different hardness and structural features, the LSM'ed surfaces exhibited similar tribological performance at room temperature (RT), where fatigue wear mechanism operates. However, the wear at 500 °C promotes tribo-oxide layer formation whose composition depended on the alloying with Mo. Thus, addition of 10 wt% Mo into Stellite 12 PTA deposit has remarkably enhanced the high temperature wear performance of the LSM'ed surface as a result of participation of complex oxide (CoMoO4) in tribo-oxide layer.

Temperature dependence of the magnetization of canted spin structures

DEFF Research Database (Denmark)

Jacobsen, Henrik; Lefmann, Kim; Brok, Erik

2012-01-01

Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models for the ......Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models...... for the temperature dependence of the magnetization of a simple canted spin structure in which relaxation can take place at finite temperatures between spin configurations with different canting angles. We show that the saturation magnetization may either decrease or increase with decreasing temperature, depending...

Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers

Energy Technology Data Exchange (ETDEWEB)

Pappas, S. D.; Trachylis, D.; Velgakis, M. J. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Kapaklis, V.; Joensson, P. E.; Papaioannou, E. Th. [Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden); Delimitis, A. [Chemical Process Engineering Research Institute (CPERI), Centre for Research and Technology Hellas (CERTH), 57001 Thermi, Thessaloniki (Greece); Poulopoulos, P. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Materials Science Department, University of Patras, 26504 Patras (Greece); Fumagalli, P. [Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Politis, C. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

2012-09-01

Ni/NiO multilayers were grown by magnetron sputtering at room temperature, with the aid of the natural oxidation procedure. That is, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer ({approx}1.2 nm) is formed. Simulated x-ray reflectivity patterns reveal that layering is excellent for individual Ni-layer thickness larger than 2.5 nm, which is attributed to the intercalation of amorphous NiO between the polycrystalline Ni layers. The magnetization of the films, measured at temperatures 5-300 K, has almost bulk-like value, whereas the films exhibit a trend to perpendicular magnetic anisotropy (PMA) with an unusual significant positive interface anisotropy contribution, which presents a weak temperature dependence. The power-law behavior of the multilayers indicates a non-negligible contribution of higher order anisotropies in the uniaxial anisotropy. Bloch-law fittings for the temperature dependence of the magnetization in the spin-wave regime show that the magnetization in the multilayers decreases faster as a function of temperature than the one of bulk Ni. Finally, when the individual Ni-layer thickness decreases below 2 nm, the multilayer stacking vanishes, resulting in a dramatic decrease of the interface magnetic anisotropy and consequently in a decrease of the perpendicular magnetic anisotropy.

Time-dependent density functional theory for the charging kinetics of electric double layer containing room-temperature ionic liquids.

Science.gov (United States)

Lian, Cheng; Zhao, Shuangliang; Liu, Honglai; Wu, Jianzhong

2016-11-28

Understanding the charging kinetics of electric double layers is of fundamental importance for the design and development of novel electrochemical devices such as supercapacitors and field-effect transistors. In this work, we study the dynamic behavior of room-temperature ionic liquids using a classical time-dependent density functional theory that accounts for the molecular excluded volume effects, the electrostatic correlations, and the dispersion forces. While the conventional models predict a monotonic increase of the surface charge with time upon application of an electrode voltage, our results show that dispersion between ions results in a non-monotonic increase of the surface charge with the duration of charging. Furthermore, we investigate the effects of van der Waals attraction between electrode/ionic-liquid interactions on the charging processes.

Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

Energy Technology Data Exchange (ETDEWEB)

Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho, E-mail: bhchoi@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-707 (Korea, Republic of)

2015-01-15

ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

Temperature dependence of elastic properties of paratellurite

International Nuclear Information System (INIS)

Silvestrova, I.M.; Pisarevskii, Y.V.; Senyushenkov, P.A.; Krupny, A.I.

1987-01-01

New data are presented on the temperature dependence of the elastic wave velocities, elastic stiffness constants, and thermal expansion of paratellurite. It is shown that the external pressure appreciably influences the elastic properties of TeO 2 , especially the temperature dependence of the elastic modulus connected with the crystal soft mode. (author)

Size dependent magnetism of mass selected deposited transition metal clusters

International Nuclear Information System (INIS)

Lau, T.

2002-05-01

The size dependent magnetic properties of small iron clusters deposited on ultrathin Ni/Cu(100) films have been studied with circularly polarised synchrotron radiation. For X-ray magnetic circular dichroism studies, the magnetic moments of size selected clusters were aligned perpendicular to the sample surface. Exchange coupling of the clusters to the ultrathin Ni/Cu(100) film determines the orientation of their magnetic moments. All clusters are coupled ferromagnetically to the underlayer. With the use of sum rules, orbital and spin magnetic moments as well as their ratios have been extracted from X-ray magnetic circular dichroism spectra. The ratio of orbital to spin magnetic moments varies considerably as a function of cluster size, reflecting the dependence of magnetic properties on cluster size and geometry. These variations can be explained in terms of a strongly size dependent orbital moment. Both orbital and spin magnetic moments are significantly enhanced in small clusters as compared to bulk iron, although this effect is more pronounced for the spin moment. Magnetic properties of deposited clusters are governed by the interplay of cluster specific properties on the one hand and cluster-substrate interactions on the other hand. Size dependent variations of magnetic moments are modified upon contact with the substrate. (orig.)

Time-Dependent Natural Convection Couette Flow of Heat ...

African Journals Online (AJOL)

Time-Dependent Natural Convection Couette Flow of Heat Generating/Absorbing Fluid between Vertical Parallel Plates Filled With Porous Material. ... The numerical simulation conducted for some saturated liquids reveled that at t ≥ Pr the steady and unsteady state velocities (as well as the temperature of the fluid) ...

Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

2013-01-15

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

Temperature dependence of sound velocity in yttrium ferrite

International Nuclear Information System (INIS)

L'vov, V.A.

1979-01-01

The effect of the phonon-magnon and phonon-phonon interoctions on the temperature dependence of the longitudinal sound velocity in yttrium ferrite is considered. It has been shown that at low temperatures four-particle phonon-magnon processes produce the basic contribution to renormalization of the sound velocity. At higher temperatures the temperature dependence of the sound velocity is mainly defined by phonon-phonon processes

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Araiza, J J [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Paseo a la Bufa esq, Calzada Solidaridad s/n 98060, Zacatecas (Mexico); Sanchez, O [Departamento de Fisica e Ingenieria de Superficies, Instituto de Ciencia de Materiales de Madrid-CSIC, C/ Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain)], E-mail: olgas@icmm.csic.es

2009-06-07

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr{sub 3}N{sub 4} (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Analytical Solution of Heat Conduction for Hollow Cylinders with Time-Dependent Boundary Condition and Time-Dependent Heat Transfer Coefficient

Directory of Open Access Journals (Sweden)

Te-Wen Tu

2015-01-01

Full Text Available An analytical solution for the heat transfer in hollow cylinders with time-dependent boundary condition and time-dependent heat transfer coefficient at different surfaces is developed for the first time. The methodology is an extension of the shifting function method. By dividing the Biot function into a constant plus a function and introducing two specially chosen shifting functions, the system is transformed into a partial differential equation with homogenous boundary conditions only. The transformed system is thus solved by series expansion theorem. Limiting cases of the solution are studied and numerical results are compared with those in the literature. The convergence rate of the present solution is fast and the analytical solution is simple and accurate. Also, the influence of physical parameters on the temperature distribution of a hollow cylinder along the radial direction is investigated.

Temperature dependence of magnetoresistance in copper single crystals

Science.gov (United States)

Bian, Q.; Niewczas, M.

2018-03-01

Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

Experimental studies on particle deposition by thermophoresis and inertial impaction from particulate high temperature gas flow

International Nuclear Information System (INIS)

Kim, S.S.; Kim, Y.J.

1987-01-01

In view of fouling and erosion of gas turbine blade, heat exchanger and pipelines, increasing attention has been paid to particle deposition (transport) in high temperature flow systems. This is also necessary to develop a cleaning or filtration devices. Using 'real time' laser-light reflectivity and scanning electron microscope technique, we quantitatively treat particle size effect and the interaction between Brownian diffusion, thermoporesis (particle drift down a temperature gradient), and inertial impaction of particles (0.2 to 30 μm in diameter) in laminar hot combustion gas-particles flow (ca. 1565 K)

Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Energy Technology Data Exchange (ETDEWEB)

Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

2017-08-01

Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

Time-dependent embedding

OpenAIRE

Inglesfield, J. E.

2007-01-01

A method of solving the time-dependent Schr\\"odinger equation is presented, in which a finite region of space is treated explicitly, with the boundary conditions for matching the wave-functions on to the rest of the system replaced by an embedding term added on to the Hamiltonian. This time-dependent embedding term is derived from the Fourier transform of the energy-dependent embedding potential, which embeds the time-independent Schr\\"odinger equation. Results are presented for a one-dimensi...

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Science.gov (United States)

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

KAUST Repository

Stavarache, Ionel

2017-07-21

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO₂ thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO₂ by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO₂ photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 10¹⁴ Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO₂ thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

KAUST Repository

Qaisi, Ramy M.; Smith, Casey; Hussain, Muhammad Mustafa

2014-01-01

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

KAUST Repository

Qaisi, Ramy M.

2014-05-15

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of metabolites for estimating blood deposition time.

Science.gov (United States)

Lech, Karolina; Liu, Fan; Davies, Sarah K; Ackermann, Katrin; Ang, Joo Ern; Middleton, Benita; Revell, Victoria L; Raynaud, Florence J; Hoveijn, Igor; Hut, Roelof A; Skene, Debra J; Kayser, Manfred

2018-01-01

Trace deposition timing reflects a novel concept in forensic molecular biology involving the use of rhythmic biomarkers for estimating the time within a 24-h day/night cycle a human biological sample was left at the crime scene, which in principle allows verifying a sample donor's alibi. Previously, we introduced two circadian hormones for trace deposition timing and recently demonstrated that messenger RNA (mRNA) biomarkers significantly improve time prediction accuracy. Here, we investigate the suitability of metabolites measured using a targeted metabolomics approach, for trace deposition timing. Analysis of 171 plasma metabolites collected around the clock at 2-h intervals for 36 h from 12 male participants under controlled laboratory conditions identified 56 metabolites showing statistically significant oscillations, with peak times falling into three day/night time categories: morning/noon, afternoon/evening and night/early morning. Time prediction modelling identified 10 independently contributing metabolite biomarkers, which together achieved prediction accuracies expressed as AUC of 0.81, 0.86 and 0.90 for these three time categories respectively. Combining metabolites with previously established hormone and mRNA biomarkers in time prediction modelling resulted in an improved prediction accuracy reaching AUCs of 0.85, 0.89 and 0.96 respectively. The additional impact of metabolite biomarkers, however, was rather minor as the previously established model with melatonin, cortisol and three mRNA biomarkers achieved AUC values of 0.88, 0.88 and 0.95 for the same three time categories respectively. Nevertheless, the selected metabolites could become practically useful in scenarios where RNA marker information is unavailable such as due to RNA degradation. This is the first metabolomics study investigating circulating metabolites for trace deposition timing, and more work is needed to fully establish their usefulness for this forensic purpose.

Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

International Nuclear Information System (INIS)

Eres, D.; Sharp, J.W.

1992-01-01

The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

Deposition and characterization of ZnS thin films using chemical bath deposition method in the presence of sodium tartrate as complexing agent

International Nuclear Information System (INIS)

Kassim, A.; Tee, T.W.; Min, H.S.; Nagalingam, S.

2011-01-01

ZnS thin films were deposited on indium tin oxide glass substrate using the chemical bath deposition method. The deposited films were characterized by X-ray diffraction and atomic force microscopy. The influence of bath temperature on the structure and morphology of the thin films was investigated at three different bath temperatures of 60, 70 and 80 deg. C in the presence of sodium tartrate as a complexing agent. The XRD results indicated that the deposited ZnS thin films exhibited a polycrystalline cubic structure. The number of ZnS peaks increased from three to four peaks as the bath temperature was increased from 60 to 80 deg. C based on the XRD patterns. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the bath temperature. The grain size increased as the bath temperature was increased from 60 to 80 deg. C. (author)

Potentiostatic electro-deposition of 241Am using room temperature ionic liquids

International Nuclear Information System (INIS)

Sankhe, R.H.; Mirashi, N.N.; Arijit Sengupta; Murali, M.S.

2015-01-01

An attempt was made for the potentiostatic electrodeposition of 241 Am using six different room temperature ionic liquids (RTILs). Effect of electrodeposition time on the % of electrodeposition of 241 Am, pH change of the solution and the temperature change of the systems were investigated. It was observed that for water immiscible RTILs, the least viscous RTIL gave the best yield (when mixed with iso-propanol), while for water miscible RTILs, reverse trend was observed (when mixed with water). Out of all water immiscible RTILs under consideration for the present case, the octyl-methyl-pyrrolidinium bis(trifluoromethylsulfonyl)imide (C 8 mpyNTf 2 ) in isopropanol was found to yield almost quantitative (99.6 %) electrodeposition of 241 Am within 45 min whereas the most effective system was found to be C 8 mimBr with ∼90 % of 241 Am deposited on the electrode for water miscible RTILs. To the best of our knowledge, this is the first approach ever been reported in the literature. (author)

Characterization and temperature controlling property of TiAlN coatings deposited by reactive magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Chen, J.T. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wang, J. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); National Key Laboratory of Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000 (China); Zhang, F.; Zhang, G.A.; Fan, X.Y.; Wu, Z.G. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Yan, P.X. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute Chemical and Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: pxyan@lzu.edu.cn

2009-03-20

Titanium aluminum nitride (TiAlN) ternary coating is a potential material which is expected to be applied on satellite for thermal controlling. In order to investigate thermal controlling property, TiAlN coatings were deposited on Si wafers with different N{sub 2} and Ar flux ratio by reactive magnetron co-sputtering. The structure, morphology, chemical composition and optical reflectance are investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atom force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and spectrophotometer, respectively. The orientation of the coatings depends on the N{sub 2}/Ar flux ratio. The coatings deposited with N{sub 2}/Ar ratio of 10, 30 and 60% show the cubic-TiN [2 2 0] preferred orientation and the coating deposited with N{sub 2}/Ar ratio of 100% exhibits the phase of hexagonal-AlN and cubic-TiN. The surface of the coatings becomes more compact and smoother with the N{sub 2}/Ar ratios increase. XPS spectrum indicates that the oxides (TiO{sub 2} and Al{sub 2}O{sub 3}), oxynitride (TiN{sub x}O{sub y}) and nitrides (TiN and AlN{sub x}) appear at the surface of the coatings. Ignoring internal power, the optimum equilibrium temperature of TiAlN coatings is 18 deg. C and the equilibrium temperature after heat-treated has slight change, which provides the prospective application on thermal controlling.

Structural properties of nitrogenated amorphous carbon films: Influence of deposition temperature and radiofrequency discharge power

International Nuclear Information System (INIS)

Lazar, G.; Bouchet-Fabre, B.; Zellama, K.; Clin, M.; Ballutaud, D.; Godet, C.

2008-01-01

The structural properties of nitrogenated amorphous carbon deposited by radiofrequency magnetron sputtering of graphite in pure N 2 plasma are investigated as a function of the substrate temperature and radiofrequency discharge power. The film composition is derived from x-ray photoemission spectroscopy, nuclear reaction analysis and elastic recoil detection measurements and the film microstructure is discussed using infrared, Raman, x-ray photoemission and near edge x-ray absorption fine structure spectroscopic results. At low deposition temperature and low radiofrequency power, the films are soft, porous, and easily contaminated with water vapor and other atmospheric components. The concentration of nitrogen in the films is very large for low deposition temperatures (∼33.6 at. % N at 150 deg. C) but decreases strongly when the synthesis temperature increases (∼15 at. % N at 450 deg. C). With increasing deposition temperature and discharge power values, the main observed effects in amorphous carbon nitride alloys are a loss of nitrogen atoms, a smaller hydrogen and oxygen contamination related to the film densification, an increased order of the aromatic sp 2 phase, and a strong change in the nitrogen distribution within the carbon matrix. Structural changes are well correlated with modifications of the optical and transport properties

Temperature dependent anomalous statistics

International Nuclear Information System (INIS)

Das, A.; Panda, S.

1991-07-01

We show that the anomalous statistics which arises in 2 + 1 dimensional Chern-Simons gauge theories can become temperature dependent in the most natural way. We analyze and show that a statistic's changing phase transition can happen in these theories only as T → ∞. (author). 14 refs

Composition dependence of crystallization temperature and magnetic property of NdFeB thin films

Energy Technology Data Exchange (ETDEWEB)

Khoa, T.V. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); International Training Institute for Materials Science (ITIMS), Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Ha, N.D. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); Hong, S.M. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); Jin, H.M. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); Kim, G.W. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); Hien, T.D. [International Training Institute for Materials Science (ITIMS), Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Tai, L.T. [International Training Institute for Materials Science (ITIMS), Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Duong, N.P. [International Training Institute for Materials Science (ITIMS), Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Lee, K.E. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); Kim, C.G. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of); Kim, C.O. [Research Center for Advanced Magnetic Materials (ReCAMM), Chungnam National University, Daejon, 305-764 (Korea, Republic of)]. E-mail: magkim@cnu.ac.kr

2006-09-15

Si(100)/Mo(30nm)/Nd{sub x}Fe{sub 92-x}B{sub 8}(800nm)/Mo(30nm) (x=14, 20, 30) films are prepared by RF magnetron sputtering at room temperature. As-deposited films are amorphous materials. The crystallization temperature of the Nd{sub 2}Fe{sub 14}B phase decreases from 575deg. C to 500deg. C with increase of x from 14 to 20-30. The optimum annealing temperature with 30min annealing time is 650 deg. C, 625 deg. C and 600 deg. C for x=14, 20 and 30, respectively, and the x=20 film has the largest energy product of 100118MG.

An analytic solution to the time-dependent first-daughter fission-product plateout problem for multi-region isothermal slug flow

International Nuclear Information System (INIS)

Durkee, J.W. Jr.; Lee, C.E.

1985-01-01

The time-dependent, axisymmetric, isothermal slug flow convective-diffusion equation with radioactive decay is solved analytically to predict the behavior of a first-daughter fission-product undergoing gaseous transport through multiple materials in a cylindrical pipe. The integration coefficients are determined using the Davidon variable metric minimization method. The behavior of fission-product material deposited on the conduit wall is described by a standard mass-transfer model. The time-dependent plateout rate behavior, determined previously for parent fission-product deposition, is again evident for daughter product plateout. Dominance of the daughter plateout by parent deposition characteristics is apparent. The determination of the daughter wall mass-transfer and diffusion coefficient using a least-squares analysis of measured data depends upon a reasonably low ratio of parent/daughter half-lives. This is illustrated with 137 Cs/ 137 Ba(=2x10 5 ) and 140 Ba/ 140 La(=7.6), where for 137 Cs/ 137 Ba the solution sensitivity to the 137 Ba deposition parameters is small and for 140 Ba/ 140 La a reasonable solution is readily obtained. (author)

SHOVAV-JUEL. A one dimensional space-time kinetic code for pebble-bed high-temperature reactors with temperature and Xenon feedback

International Nuclear Information System (INIS)

Nabbi, R.; Meister, G.; Finken, R.; Haben, M.

1982-09-01

The present report describes the modelling basis and the structure of the neutron kinetics-code SHOVAV-Juel. Information for users is given regarding the application of the code and the generation of the input data. SHOVAV-Juel is a one-dimensional space-time-code based on a multigroup diffusion approach for four energy groups and six groups of delayed neutrons. It has been developed for the analysis of the transient behaviour of high temperature reactors with pebble-bed core. The reactor core is modelled by horizontal segments to which different materials compositions can be assigned. The temperature dependence of the reactivity is taken into account by using temperature dependent neutron cross sections. For the simulation of transients in an extended time range the time dependence of the reactivity absorption by Xenon-135 is taken into account. (orig./RW)

Organic SIMS: the influence of time on the ion yield enhancement by silver and gold deposition

Science.gov (United States)

Adriaensen, L.; Vangaever, F.; Gijbels, R.

2004-06-01

A series of organic dyes and pharmaceuticals was used to study the secondary ion yield enhancement by metal deposition. The molecules were dissolved in methanol and spincasted on silicon substrates. Subsequently, silver or gold was evaporated on the samples to produce a very thin coating. The coated samples, when measured with TOF-SIMS, showed a considerable increase in characteristic secondary ion intensity. Gold-evaporated samples appear to exhibit the highest signal enhancement. These observations apply to organic samples in general, an advantage that allows to use the technique of metal deposition on real-world samples. However, the observed signal increase does not occur at any given moment. The time between metal deposition on the sample surface and the measuring of the sample with TOF-SIMS appears to have an important influence on the enhancement of the secondary ion intensities. In consideration of these observations several experiments were carried out, in which the spincasted samples were measured at different times after sample preparation, i.e., after gold or silver was deposited on the sample surface. The results show that, depending on the sample and the metal deposited, the secondary ion signals reach their maximum at different times. Further study will be necessary to detect the mechanism responsible for the observed enhancement effect.

Generalized Magneto-thermo-microstretch Response of a Half-space with Temperature-dependent Properties During Thermal Shock

Directory of Open Access Journals (Sweden)

Qi-lin Xiong

Full Text Available Abstract The generalized magneto-thermoelastic problem of an infinite homogeneous isotropic microstretch half-space with temperature-dependent material properties placed in a transverse magnetic field is investigated in the context of different generalized thermoelastic theories. The upper surface of the half-space is subjected to a zonal time-dependent heat shock. By solving finite element governing equations, the solution to the problem is obtained, from which the transient magneto-thermoelastic responses, including temperature, stresses, displacements, microstretch, microrotation, induced magnetic field and induced electric field are presented graphically. Comparisons are made in the results obtained under different generalized thermoelastic theories to show some unique features of generalized thermoelasticity, and comparisons are made in the results obtained under three forms of temperature dependent material properties (absolute temperature dependent, reference temperature dependent and temperature-independent to show the effects of absolute temperature and reference temperature. Weibull or Log-normal.

Dependence of alpha radionuclide diffusion and deposition on relative air humidity

International Nuclear Information System (INIS)

Danis, A.; Ciubotariu, M.; Oncescu, M.; Mocsy, I.; Tomulescu, V.

2000-01-01

solid alpha radionuclides/aerosols were measured using a new alpha monitoring device which includes or not the paper filter for solid radionuclides/aerosols stopping and the CR-39 track detector. Such devices were fixed upright at different distances from the floor, in case of cellar and mine gallery and, for laboratory chamber, at different distances from the place of radon penetration. The alpha monitoring duration was established as a function of track density in detectors, so that the density would be measurable. The duration was within one week to two months. In order to visualize the trails of alpha particles registered during the alpha exposures, the CR-39 track detectors were etched in NaOH - 30%, for 7 hours at 70 deg. C. The temperature and humidity were measured at the beginning and at the end of the measurements. Some very interesting results on the alpha radionuclide/aerosol diffusion and deposition in cellar and mine gallery, were already obtained. So, due to the presence of some processes in which the dynamic component of aerosols had a great contribution, such as convection (advection) and diffusion, especially convective diffusion, the humidity had a diminished influence on the deposition of the solid alpha radionuclides/aerosols. At high relative humidities, of 85 - 96%, along the height of cellar and mine gallery, the solid alpha radionuclide/aerosol concentrations were found to be the same in the limits of statistical errors. At this humidity, physical-chemical processes such as heterogeneous nucleations and formation/wash of aerosols arose. Depending on the mass and composition of the aerosols with components soluble in water, the volume of aerosols increased, the density was changed and as a consequence, the deposition rate of aerosols was more diminished. The research is still in progress. (authors)

Creep and rupture behavior of weld-deposited Type 16-8-2 stainless steel at 5930C

International Nuclear Information System (INIS)

Ward, A.L.; Blackburn, L.D.

1976-03-01

The creep and rupture behavior of weld-deposited Type 16-8-2 stainless steel at 593 0 C was investigated over the time range from 3.6 x 10 4 s to 2.5 x 10 7 s. Equations relating stress to the time to rupture, the time to the onset of tertiary creep, and the time to produce a given creep strain were obtained. The experimental results indicate that the control of welding parameters (e.g. current, voltage and travel speed) within reasonable ranges can yield weld deposits with consistent time-dependent properties. Limited data suggest that high temperature (1065 0 C) post-weld annealing significantly alters only the flow curve for plastic deformation, while long-term thermal exposure at an intermediate temperature (565 0 C) produces only minor changes in either the plastic deformation or creep behavior of the weld materials

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.

Science.gov (United States)

Yoon, Sung-Min; Seong, Nak-Jin; Choi, Kyujeong; Seo, Gi-Ho; Shin, Woong-Chul

2017-07-12

We demonstrated the physical and electrical properties of the In-Ga-Zn-O (IGZO) thin films prepared by atomic-layer deposition (ALD) method and investigated the effects of the ALD temperature. The film composition (atomic ratio of In:Ga:Zn) and film density were examined to be 1:1:3 and 5.9 g/cm 3 , respectively, for all the temperature conditions. The optical band gaps decreased from 3.81 to 3.21 eV when the ALD temperature increased from 130 to 170 °C. The amounts of oxygen-related defects such as oxygen vacancies increased with increasing the ALD temperature. It was found from the in situ temperature-dependent electrical conductivity measurements that the electronic natures including the defect structures and conduction mechanism of the IGZO thin films prepared at different temperatures showed marked variations. The carrier mobilities in the saturation regions (μ sat 's) for the fabricated thin film transistors (TFTs) using the IGZO channel layers were estimated to be 6.1 to 14.8 cm 2 V -1 s -1 with increasing the ALD temperature from 130 to 170 °C. Among the devices, when the ALD temperature was controlled to be 150 °C, the IGZO TFTs showed the best performance, which resulted from the fact that the amounts of oxygen vacancies and interstitial defects could be appropriately modulated at this condition. Consequently, the μ sat , subthreshold swing, and on/off ratio for the TFT using the IGZO channel prepared at 150 °C showed 10.4 cm 2 V -1 s -1 , 90 mV/dec, and 2 × 10 9 , respectively. The threshold voltage shifts of this device could also be effectively reduced to be 0.6 and -3.2 V under the positive-bias and negative-bias-illumination stress conditions. These obtained characteristics can be comparable to those for the sputter-deposited IGZO TFTs.

Stress evaluation of chemical vapor deposited silicon dioxide films

International Nuclear Information System (INIS)

Maeda, Masahiko; Itsumi, Manabu

2002-01-01

Film stress of chemical vapor deposited silicon dioxide films was evaluated. All of the deposited films show tensile intrinsic stresses. Oxygen partial pressure dependence of the intrinsic stress is very close to that of deposition rate. The intrinsic stress increases with increasing the deposition rate under the same deposition temperature, and decreases with increasing substrate temperature. Electron spin resonance (ESR) active defects in the films were observed when the films were deposited at 380 deg. C and 450 deg. C. The ESR signal intensity decreases drastically with increasing deposition temperature. The intrinsic stress correlates very closely to the intensity of the ESR-active defects, that is, the films with larger intrinsic stress have larger ESR-active defects. It is considered that the intrinsic stress was generated because the voids caused by local bond disorder were formed during random network formation among the SiO 4 tetrahedra. This local bond disorder also causes the ESR-active defects

Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Jin, Yongzhong [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Chen, Jian, E-mail: wuhangzs@163.com [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Fu, Qingshan [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China); Li, Binghong [China Rubber Group Carbon Black Industry Research and Design Institute, 643000 Zigong, Sichuan (China); Zhang, Huazhi; Gong, Yong [Department of Materials and Chemistry Engineering, Sichuan University of Science and Engineering, 643000 Zigong, Sichuan (China)

2015-01-01

Graphical abstract: - Highlights: • HCNFs were synthesized by one-step CVD using cupric tartrate as a catalyst at temperature below 500 °C. • The synthesis of HCNFs is highly temperature-dependent at the synthesis temperature of 280–480 °C. • The addition of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system. - Abstract: Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry–differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C{sub 4}H{sub 4}CuO{sub 6} → Cu reaction occurs at ∼250–310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100–400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5–1 μm and fiber diameter of 100–200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system.

Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

International Nuclear Information System (INIS)

Jin, Yongzhong; Chen, Jian; Fu, Qingshan; Li, Binghong; Zhang, Huazhi; Gong, Yong

2015-01-01

Graphical abstract: - Highlights: • HCNFs were synthesized by one-step CVD using cupric tartrate as a catalyst at temperature below 500 °C. • The synthesis of HCNFs is highly temperature-dependent at the synthesis temperature of 280–480 °C. • The addition of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system. - Abstract: Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry–differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C 4 H 4 CuO 6 → Cu reaction occurs at ∼250–310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100–400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5–1 μm and fiber diameter of 100–200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system

Negative feedback mechanism for the long-term stabilization of earth's surface temperature

International Nuclear Information System (INIS)

Walker, J.C.G.; Hays, P.B.; Kasting, J.F.

1981-01-01

We suggest that the partial pressure of carbon dioxide in the atmosphere is buffered, over geological time scales, by a negative feedback mechanism in which the rate of weathering of silicate minerals (followed by deposition of carbonate minerals) depends on surface temperature, and surface temperature, in turn, depends on carbon dioxide partial pressure through the green effect. Although the quantitative details of this mechanism are speculative, it appears able partially to stabilize earth's surface temperature against the steady increase of solar luminosity believed to have occured since the origin of the solar system

Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

Science.gov (United States)

Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

2000-01-01

A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

Investigation Of Temperature Dependent Characteristics Of ...

African Journals Online (AJOL)

The structure, magnetization and magnetostriction of Laves phase compound TbCo2 were investigated by temperature dependent high resolution neutron powder diffraction. The compound crystallizes in the cubic Laves phase C15 structure above its Curie temperature, TC and exhibits a rhombohedral distortion (space ...

Dependence of critical current properties on growth temperature and doping level of nanorods in PLD-YBa2Cu3Oy films

International Nuclear Information System (INIS)

Fujita, N.; Haruta, M.; Ichinose, A.; Maeda, T.; Horii, S.

2013-01-01

Highlights: •We fabricated Y123 films with Ba–Nb–O nanorods at various growth temperatures. •Irreversibility lines depended on growth temperature and doping level of Ba–Nb–O. •Nanorod morphology was drastically changed by growth temperature (T s ). •Its T s dependence of the matching field was different from that for Er123 + Ba–Nb–O. -- Abstract: The vortex-Bose-glass-like irreversibility lines (ILs) emerged for 2.5 and 5.0 at.% Ba–Nb–O (BNO)-doped YBa 2 Cu 3 O y films deposited by PLD using Nd:YAG-laser. The ILs strongly depended on growth temperature (T s ) in addition to the doping level of BNO. The vortex glass region was expanded with increasing T s or doping level of BNO. Drastic change of the nanorod morphology from short and bended nanorods to long and linear nanorods with increasing T s was clarified. Moreover, it was found that T s -dependent ILs were quite different from our previous results in BNO-doped ErBa 2 Cu 3 O y films

Time of Growth Dependent of ZnO-Nanorods by Self-Assembly Methods and its Structural Properties

Science.gov (United States)

Aprilia, A.; Bahtiar, A.; Safriani, L.; Ayunita, C. C.; Afifah, N.; Syakir, N.; Risdiana; Saragi, T.; Hidayat, S.; Fitrilawati; Siregar, R. E.

2017-05-01

ZnO-nanorods (ZnO-Nrs) have been successfully prepared on glass substrate using self-assembly method by varying deposition time. Zn acetate dehydrate and 2-methoxyethanol was used as raw material and solvent respectively (for ZnO seed layer preparation), meanwhile Zn nitrate hexahydrate and hexametylenetetramine (HMTA) dissolved in deionized water used as solution growth of ZnO-Nanorods (ZnO-Nrs). In this work, deposition times of ZnO-Nrs were varied by 120 min, 150 min, 180 min and 210 minutes at 100°C of annealing temperature. In order to investigate the physical properties of resulting ZnO, several measurements such as x-ray diffraction (XRD), ultra-violet visible spectroscopy and scanning electron microscopy (SEM) were carried out. Based on ZnO nanorods SEM image with varying time depositions, seems that increasing deposition time the nanorod size decrease but when the time reach 210 min, the average size of nanorods turned back increase. From XRD measurement, the average grain size and lattice constant (c) which is assemble the nanorod structure and lattice constant (c) was determined by Debye-Scherrer formula and Bragg law’s respectively. The growth process of ZnO nanorod by 180 min time deposition was known as an appropriate time to produce ZnO nanorods with high crystal quality due to sharp peak intensity of XRD spectrum.

The deposition of aerosols on cylinders in crossflow: a time dependent study

International Nuclear Information System (INIS)

Ilias, S.; Douglas, P.L.

1985-01-01

This paper discusses the study of the deposition of aerosols on cylinders due to inertial impaction based on the solution of Navier-Stokes equation. The solution of the velocity-stream function formulation of Navier-Stokes equation can simulate a realistic flow field for virtually an unlimited range of Reynolds number

Frictional Heating with Time-Dependent Specific Power of Friction

Directory of Open Access Journals (Sweden)

Topczewska Katarzyna

2017-06-01

Full Text Available In this paper analytical solutions of the thermal problems of friction were received. The appropriate boundary-value problems of heat conduction were formulated and solved for a homogeneous semi–space (a brake disc heated on its free surface by frictional heat fluxes with different and time-dependent intensities. Solutions were obtained in dimensionless form using Duhamel's theorem. Based on received solutions, evolution and spatial distribution of the dimensionless temperature were analyzed using numerical methods. The numerical results allowed to determine influence of the time distribution of friction power on the spatio-temporal temperature distribution in brake disc.

Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

International Nuclear Information System (INIS)

Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

2006-01-01

The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

Energy Technology Data Exchange (ETDEWEB)

Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

2016-04-30

Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

Evolution of film temperature during magnetron sputtering

International Nuclear Information System (INIS)

Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

2006-01-01

We report on the results of measurements of the temperature T F surf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T F surf and substrate temperature (T s ) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T F surf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T s after stopping the deposition. At the same time, the T s either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T s remains several times lower than the T F surf . The T F surf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T F surf of HTSL is several times higher than the T s . Variations in the T F surf fairly correlate with structure changes of Cr films along thickness investigated in detail previously

Effect of fuel type and deposition surface temperature on the growth and structure of ash deposit collected during co-firing of coal with sewage-sludge, saw-dust and refuse derived fuel

Energy Technology Data Exchange (ETDEWEB)

Kupka, Tomasz; Zajac, Krzysztof; Weber, Roman [Clausthal Univ. of Technology, Clausthal-Zellerfeld (Germany). Inst. of Energy Process Engineering and Fuel Technology

2008-07-01

Blends of a South African bituminous ''Middleburg'' coal and three alternative fuels (a municipal sewage-sludge, a saw-dust and a refuse derived fuel) have been fired in the slagging reactor to examine the effect of the added fuel on slagging propensity of the mixtures. Two kinds of deposition probes have been used, un-cooled ceramic probes and air-cooled steal probes. Distinct differences in physical and chemical structures of the deposits collected using the un-cooled ceramic probes and air-cooled metal probes have been observed. Glassy, easily molten deposits collected on un-cooled ceramic deposition probes were characteristic for co-firing of municipal sewage-sludge with coal. Porous, sintered (not molten) but easily removable deposits of the same fuel blend have been collected on the air-cooled metal deposition probes. Loose, easy removable deposits have been sampled on air-cooled metal deposition probe during co-firing of coal/saw-dust blends. The mass of the deposit sampled at lower surface temperatures (550-700 C) was always larger than the mass sampled at higher temperatures (1100-1300 C) since the higher temperature ash agglomerated and sintered much faster than the low temperature deposit. (orig.)

Tribological behavior at elevated temperature of multilayer TiCN/TiC/TiN hard coatings produced by chemical vapor deposition

International Nuclear Information System (INIS)

Bao Mingdong; Xu Xuebo; Zhang Haijun; Liu Xiaoping; Tian Linhai; Zeng Zhaoxin; Song Yubin

2011-01-01

Multilayer hard coatings of TiCN/TiC/TiN on high speed steel substrates were deposited using a chemical vapor deposition system. Evaluations of microstructure, wear morphology of coatings were characterized by scanning electron microscopy, and optical microscopy. Friction coefficient and wear rates of coatings were investigated using ball-on-disk tester sliding against a WC ball at a constant load of 20 N. Tribological behavior of the coatings at room and elevated temperature were discussed. Different changing tendency of friction coefficient were observed from ball-on-disc experiments. Results showed that the friction coefficient of coatings increased gradually to a highest value, then to a relatively constant value at room temperature dry sliding wear. The friction coefficient exhibited a reverse variation tendency at temperature of 550 °C. It got a higher value at the first sliding friction cycles. Then the value of friction coefficient decreased, suffered irregular oscillations and kept a relatively lower value with increasing sliding time. Reasons of the variation of friction coefficient with sliding time and wear mechanism were analyzed and discussed at room and elevated temperatures, respectively.

Temperature dependence of mobility in silicon (100) inversion layers at low temperatures

International Nuclear Information System (INIS)

Kawaguchi, Y.; Suzuki, T.; Kawaji, S.

1982-01-01

Electron mobility of Si(100) n-inversion layers in MOSFETs having μsub(peak) (4.2 K) = 4000.6500 and 12000 cm 2 /V x s has been measured at temperatures between 1 and 80 K. The carrier concentration dependence of the mobility extrapolated to T = O and the temperature dependent part of the scattering probability are investigated. (orig.)

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

Energy Technology Data Exchange (ETDEWEB)

Muñoz Burgos, J. M., E-mail: jmunozbu@pppl.gov; Stutman, D.; Tritz, K. [Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Barbui, T.; Schmitz, O. [Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-11-15

Helium line-ratios for electron temperature (T{sub e}) and density (n{sub e}) plasma diagnostic in the Scrape-Off-Layer (SOL) and edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet, 667.8 and 728.1 nm, and triplet, 706.5 nm, visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of this powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. The analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer or by other conflicting lines from different ions.

Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

Science.gov (United States)

Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

2016-02-01

(Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

Integration of the time-dependent heat equation in the fuel rod performance program IAMBUS

International Nuclear Information System (INIS)

West, G.

1982-01-01

An iterative numerical method for integration of the time-dependent heat equation is described. No presuppositions are made for the dependency of the thermal conductivity and heat capacity on space, time and temperature. (orig.) [de

Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors

International Nuclear Information System (INIS)

Wu Jie; Shi Junfei; Dong Chengyuan; Chen Yuting; Zhou Daxiang; Hu Zhe; Zhan Runze; Zou Zhongfei

2014-01-01

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ''optimized-annealed'' are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150 °C while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and O1s spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films. Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. (semiconductor devices)

Similar temperature dependencies of glycolytic enzymes: an evolutionary adaptation to temperature dynamics?

Directory of Open Access Journals (Sweden)

Cruz Luisa Ana B

2012-12-01

Full Text Available Abstract Background Temperature strongly affects microbial growth, and many microorganisms have to deal with temperature fluctuations in their natural environment. To understand regulation strategies that underlie microbial temperature responses and adaptation, we studied glycolytic pathway kinetics in Saccharomyces cerevisiae during temperature changes. Results Saccharomyces cerevisiae was grown under different temperature regimes and glucose availability conditions. These included glucose-excess batch cultures at different temperatures and glucose-limited chemostat cultures, subjected to fast linear temperature shifts and circadian sinoidal temperature cycles. An observed temperature-independent relation between intracellular levels of glycolytic metabolites and residual glucose concentration for all experimental conditions revealed that it is the substrate availability rather than temperature that determines intracellular metabolite profiles. This observation corresponded with predictions generated in silico with a kinetic model of yeast glycolysis, when the catalytic capacities of all glycolytic enzymes were set to share the same normalized temperature dependency. Conclusions From an evolutionary perspective, such similar temperature dependencies allow cells to adapt more rapidly to temperature changes, because they result in minimal perturbations of intracellular metabolite levels, thus circumventing the need for extensive modification of enzyme levels.

Relativistic time-dependent Fermion-mass renormalization using statistical regularization

Science.gov (United States)

Kutnink, Timothy; McMurray, Christian; Santrach, Amelia; Hockett, Sarah; Barcus, Scott; Petridis, Athanasios

2017-09-01

The time-dependent electromagnetically self-coupled Dirac equation is solved numerically by means of the staggered-leap-frog algorithm with reflecting boundary conditions. The stability region of the method versus the interaction strength and the spatial-grid size over time-step ratio is established. The expectation values of several dynamic operators are then evaluated as functions of time. These include the fermion and electromagnetic energies and the fermion dynamic mass. There is a characteristic, non-exponential, oscillatory dependence leading to asymptotic constants of these expectation values. In the case of the fermion mass this amounts to renormalization. The dependence of the expectation values on the spatial-grid size is evaluated in detail. Furthermore, the contribution of positive and negative energy states to the asymptotic values and the gauge fields is analyzed. Statistical regularization, employing a canonical ensemble whose temperature is the inverse of the grid size, is used to remove the grid-size and momentum-dependence and produce a finite result in the continuum limit.

Time-dependent fatigue--phenomenology and life prediction

International Nuclear Information System (INIS)

Coffin, L.F.

1979-01-01

The time-dependent fatigue behavior of materials used or considered for use in present and advanced systems for power generation is outlined. A picture is first presented to show how basic mechanisms and phenomenological information relate to the performance of the component under consideration through the so-called local strain approach. By this means life prediction criteria and design rules can be formulated utilizing laboratory test information which is directly translated to predicting the performance of a component. The body of phenomenological information relative to time-dependent fatigue is reviewed. Included are effects of strain range, strain rate and frequency, environment and wave shape, all of which are shown to be important in developing both an understanding and design base for time dependent fatigue. Using this information, some of the current methods being considered for the life prediction of components are reviewed. These include the current ASME code case, frequency-modified fatigue equations, strain range partitioning, the damage function method, frequency separation and damage rate equations. From this review, it is hoped that a better perspective on future directions for basic material science at high temperature can be achieved

Simulation of temperature-pressure profiles and wax deposition in gas-lift wells

Directory of Open Access Journals (Sweden)

Sevic Snezana

2017-01-01

Full Text Available Gas-lift is an artificial lift method in which gas is injected down the tubing- -casing annulus and enters the production tubing through the gas-lift valves to reduce the hydrostatic pressure of the formation fluid column. The gas changes pressure, temperature and fluid composition profiles throughout the production tubing string. Temperature and pressure drop along with the fluid composition changes throughout the tubing string can lead to wax, asphaltenes and inorganic salts deposition, increased emulsion stability and hydrate formation. This paper presents a new model that can sucesfully simulate temperature and pressure profiles and fluid composition changes in oil well that operates by means of gas-lift. This new model includes a pipe-in-pipe segment (production tubing inside production casing, countercurrent flow of gas-lift gas and producing fluid, heat exchange between gas-lift gas and the surrounding ambient – ground; and gas-lift gas with the fluid in the tubing. The model enables a better understanding of the multiphase fluid flow up the production tubing. Model was used to get insight into severity and locations of wax deposition. The obtained information on wax deposition can be used to plan the frequency and depth of wax removing operations. Model was developed using Aspen HYSYS software.