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Sample records for deposition pecvd technique

  1. STRUCTURAL PROPERTIES INVESTIGATION ON MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2005-01-01

    Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microcrystalline silicon(μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si: H films are strongly affected by the two deposition conditions and are more sensitive to working gas pressure than VHF plasma power. SEM characterizations have further confirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of μc-Si: H films ascribing to polymerization reactions, which is also more sensitive to working gas pressure than VHF plasma power.

  2. SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2006-01-01

    Raman spectra and scanning electron microscope (SEM) techniques were used to determine the structural properties of microcrystalline silicon (μc-Si:H) films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition ( VHF-PECVD )technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer,corning 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Corning 7059 glass, the surfaces of the μc-Si:H films are fairly smooth because of the homogenous growth or little lattice mismatch. But for general optical glass, the surface of the μc-Si:H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si:H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material, and then the deposition rates, optical and electrical properties are also strongly influenced, hence,deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si:H films with device-grade quality on cheap substrates such as general glass.

  3. Simulation and experimental verification of silicon dioxide deposition by PECVD

    Science.gov (United States)

    Xu, Qing; Li, Yu-Xing; Li, Xiao-Ning; Wang, Jia-Bin; Yang, Fan; Yang, Yi; Ren, Tian-Ling

    2017-02-01

    Deposition of silicon dioxide in high-density plasma is an important process in integrated circuit manufacturing. A software named CFD-ACE was used to simulate the mechanism of plasma in the chamber of plasma enhanced chemical vapor deposition (PECVD) system, and the evolution of the feature profile was simulated based on CFD-TOPO. Simulation and experiment of silicon dioxide that deposited in SiH4/N2O mixture by PECVD system was researched. The particle density, energy and angular distribution in the chamber were simulated and discussed. We also studied how the depth/width ratio affected the step coverage of the trench and analyzed the deposition rate of silicon dioxide on the feature scale. X-ray photoelectron spectroscopy (XPS) was used to analyze the elemental composition of thin films. Images of the feature profiles were taken by scanning electron microscope (SEM). The simulation results were in good agreement with experimental, which could guide the semiconductor device manufacture.

  4. Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films

    Science.gov (United States)

    Coscia, U.; Ambrosone, G.; Gesuele, F.; Grossi, V.; Parisi, V.; Schutzmann, S.; Basa, D. K.

    2007-12-01

    The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.

  5. Thin film silicon n–i–p solar cells deposited by VHF PECVD at 100 °C substrate temperature

    NARCIS (Netherlands)

    Brinza, M.; Rath, J.K.; Schropp, R.E.I.

    2009-01-01

    The applicability of the very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) technique to the fabrication of solar cells in an n–i–p configuration at 100 °C substrate temperature is being investigated. Amorphous and microcrystalline silicon cells are made with the absorber la

  6. A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-03-01

    Full Text Available The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H thin film transistors (TFTs has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD and hot-wire chemical vapor deposition (HW-CVD at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50% can be deposited by HW-CVD all the way down to room temperature.

  7. Fluorocarbon coatings deposited on micron-sized particles by atmospheric PECVD

    NARCIS (Netherlands)

    Abadjieva, E.; Heijden, A.E.D.M. van der; Creyghton, Y.L.M.; Ommen, J.R. van

    2012-01-01

    Fluorocarbon coatings have been deposited on micron-sized silica particles by means of atmospheric pressure plasma-enhanced chemical vapor deposition (PECVD). The silica particles have a diameter in the range between 40 and 70 ?m. They are fluidized at atmospheric pressure in a circulating fluidized

  8. Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2008-01-01

    This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples by t...

  9. Growth of single wall carbon nanotubes using PECVD technique: An efficient chemiresistor gas sensor

    Science.gov (United States)

    Lone, Mohd Yaseen; Kumar, Avshish; Husain, Samina; Zulfequar, M.; Harsh; Husain, Mushahid

    2017-03-01

    In this work, the uniform and vertically aligned single wall carbon nanotubes (SWCNTs) have been grown on Iron (Fe) deposited Silicon (Si) substrate by plasma enhanced chemical vapor deposition (PECVD) technique at very low temperature of 550 °C. The as-grown samples of SWCNTS were characterized by field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM) and Raman spectrometer. SWCNT based chemiresistor gas sensing device was fabricated by making the proper gold contacts on the as-grown SWCNTs. The electrical conductance and sensor response of grown SWCNTs have been investigated. The fabricated SWCNT sensor was exposed to ammonia (NH3) gas at 200 ppm in a self assembled apparatus. The sensor response was measured at room temperature which was discussed in terms of adsorption of NH3 gas molecules on the surface of SWCNTs. The achieved results are used to develope a miniaturized gas sensor device for monitoring and control of environment pollutants.

  10. A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases

    Science.gov (United States)

    Bouaziz, Lamia; Dridi, Donia; Karyaoui, Mokhtar; Angelova, Todora; Sanchez Plaza, Guillermo; Chtourou, Radhouane

    2017-03-01

    In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.

  11. Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

    Directory of Open Access Journals (Sweden)

    Veronika Vavrunkova

    2007-01-01

    Full Text Available We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

  12. The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Verlaan, V.; Verkerk, A.D.; Arnoldbik, W.M.; Van der Werf, C.H.M.; Bakker, R.; Houweling, Z.S.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht (Netherlands); Romijn, I.G.; Borsa, D.M.; Weeber, A.W. [ECN Solar Energy, Petten (Netherlands); Luxembourg, S.L.; Zeman, M. [DIMES, Delft University of Technology, Delf (Netherlands); Dekkers, H.F.W. [IMEC, Leuven (Belgium)

    2009-04-15

    Silicon nitride (SiNx) is a material with many applications and can be deposited with various deposition techniques. Series of SiNx films were deposited with HWCVD, RF PECVD,MWPECVD and LF PECVD. The atomic densities are quantified using RBS and ERD. The influence of the atomic densities on the Si-N and Si-Si bond structure is studied. The density of N-N bonds is found to be negligible. New Si-N FTIR proportionality factors are determined which increase with increasing N/Si ratio from 1.2 x 10{sup 19} cm-1 for Si rich films (N/Si=0.2) to 2.4 x 10{sup 19}cm-1 for N rich films (N/Si=1.5). The peak position of the Si-H stretching mode in the FTIR spectrum is discussed using the chemical induction model. It is shown that especially for Si-rich films the hydrogen content affects the Si-H peak position. The influence of the composition on the refractive index of the films is discussed on the basis of the Lorentz-Lorenz equation and the Kramers-Kronig relation. The decreasing refractive index with increasing N/Si ratio is primarily caused by an increase of the band gap.

  13. Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2007-01-01

    This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters...... at two areaswere formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently...

  14. Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2

    Institute of Scientific and Technical Information of China (English)

    ZHONG Zhi-qin; ZHANG Yi; YU Zhi-wei; DAI Li-ping; ZHANG Guo-jun; WANG Yu-mei; WANG Gang; WANG Shu-ya

    2009-01-01

    Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition(LF-PECVD) using silane and nitrogen as precursors. Characteristics such as deposition rate,surface morphology,and chemical composition were measured by spectroscopic ellipsometry(SE),atomic force microscope(AFM) and x-ray photoelectron spectroscopy(XPS).It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface.The XPS result indicated that a small quantity of oxygen was involved in the sample,which was discussed in this paper.

  15. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Said-Bacar, Z., E-mail: zabardjade@yahoo.fr [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Prathap, P. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Cayron, C. [CEA, LITEN, DEHT, Minatec, 17 rue des Martyrs, 38054 Cedex 9 (France); Mermet, F. [IREPA LASER, Pole API - Parc d' Innovation, 67400 Illkirch (France); Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. Black-Right-Pointing-Pointer Large hydrogen content results in decohesion of the films due to hydrogen effusion. Black-Right-Pointing-Pointer Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. Black-Right-Pointing-Pointer Grains of size between 20 and 100 {mu}m in width and about 200 {mu}m in long in scanning direction are obtained with these latter films. - Abstract: This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration ({approx}10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  16. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  17. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  18. Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Zhou Mei-Li; Fu Ya-Bo; Chen Qiang; Ge Yuan-Jing

    2007-01-01

    This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared,water wpour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.

  19. Thin film silicon deposited at 100 C by VHF PECVD: optoelectronic properties and incorporation in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brinza, Monica; Rath, Jatindra K.; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, Utrecht University, PO Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-15

    This paper explores the possibility of producing amorphous and nanocrystalline silicon using very high frequency PECVD at a low substrate temperature of 123 C at high deposition rate of 0.4-0.7 nm/s. The quality of these amorphous layers remains similar to that obtained in layers deposited at low deposition rate of 0.1 nm/s. The amorphous-to-nanocrystalline transition is sensitive to deposition chamber history. The microstructure parameter of the best nanocrystalline layers amounts to 0.4. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Application of PECVD for bulk and surface passivation of high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Krygowski, T.; Doshi, P.; Cai, L.; Doolittle, A.; Rohatgi, A. [Georgia Inst. of Technology, Atlanta, GA (United States)

    1995-08-01

    Plasma enhanced chemical vapor deposition (PECVD) passivation of bulk and surface defects has been shown to be an important technique to improve the performance of multicrystalline silicon (mc-Si) and single crystalline silicon solar cells. In this paper, we report the status of our on-going investigation into the bulk and surface passivation properties of PECVD insulators for photovoltaic applications. The objective of this paper is to demonstrate the ability of PECVD films to passivate the front (emitter) surface, bulk, and back surface by proper tailoring of deposition and post-PECVD annealing conditions.

  1. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper.

    Science.gov (United States)

    Gottlieb, Steven; Wöhrl, Nicolas; Schulz, Stephan; Buck, Volker

    2016-01-01

    The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film's nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and

  2. Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD with TEOS/N2/O2

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2013-12-01

    Full Text Available The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD. We used of low temperature and an inductively coupled plasma (ICP for various with gas mixtures of TEOS/N2/O2 at a given RF power and dc bias voltage. For the gas mixture with 40 sccm of N2 in TEOS, 100 standard cubic centimeters per minute (sccm of N2, and 500 sccm of O2, transparent and scratch-resistant SiO2 could be deposited with a deposition rate of 30 nm/min when RF power of 500 W and a dc-bias voltage of 350V were applied. The characteristics of the deposited SiO2, such as the composition, the binding energy, etc. were compared with the SiO2 deposited by using thermal CVD and evaporation. It was found that the SiO2 deposited by PECVD with TEOS/N2/O2 exhibited properties typical of SiO2 deposited applying thermal CVD and evaporation. The surface roughness of the 100 nm-thick SiO2 deposited by PECVD was similar to that of the substrate.

  3. Plasma diagnostic approach for the low-temperature deposition of silicon quantum dots using dual frequency PECVD

    Science.gov (United States)

    Sahu, B. B.; Yin, Y.; Lee, J. S.; Han, Jeon G.; Shiratani, M.

    2016-10-01

    Although studies of silicon (Si) quantum dots (QDs) were started just a few years ago, progress is noteworthy concerning unique film properties and their potential application for devices. In particular, relating to the Si QD process optimization, it is essential to control the deposition environment by studying the role of plasma parameters and atomic and molecular species in the process plasmas. In this work, we report on advanced material processes for the low-temperature deposition of Si QDs by utilizing radio frequency and ultrahigh frequency dual frequency (DF) plasma enhanced chemical vapor deposition (PECVD) method. DF PECVD can generate a very high plasma density in the range ~9  ×  1010 cm-3 to 3.2  ×  1011 cm-3 at a very low electron temperature (T e) ~ 1.5 to 2.4 eV. The PECVD processes, using a reactive mixture of H2/SiH4/NH3 gases, are carefully studied to investigate the operating regime and to optimize the deposition parameters by utilizing different plasma diagnostic tools. The analysis reveals that a higher ion flux at a higher plasma density on the substrate is conducive to enhancing the overall crystallinity of the deposited film. Along with high-density plasmas, a high concentration of atomic H and N is simultaneously essential for the high growth rate deposition of Si QDs. Numerous plasma diagnostics methods and film analysis tools are used to correlate the effect of plasma- and atomic-radical parameters on the structural and chemical properties of the deposited Si QD films prepared in the reactive mixtures of H2/SiH4/NH3 at various pressures.

  4. Synthesis of Ag-doped hydrogenated carbon thin films by a hybrid PVD–PECVD deposition process

    Indian Academy of Sciences (India)

    Majji Venkatesh; Sukru Taktak; Efstathios I Meletis

    2014-12-01

    Silver-doped hydrogenated amorphous carbon (Ag-DLC) films were deposited on Si substrates using a hybrid plasma vapour deposition–plasma enhanced chemical vapour deposition (PVD–PECVD) process combining Ag target magnetron sputtering and PECVD in an Ar–CH4 plasma. Processing parameters (working pressure, CH4/Ar ratio and magnetron current) were varied to obtain good deposition rate and a wide variety of Ag films. Structure and bonding environment of the films were obtained from transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy studies. Variation of processing parameters was found to produce Ag-doped amorphous carbon or diamond-like carbon (DLC) films with a range of characteristics with CH4/Ar ratio exercising a dominant effect. It was pointed out that Ag concentration and deposition rate of the film increased with the increase in d.c. magnetron current. At higher Ar concentration in plasma, Ag content increased whereas deposition rate of the film decreased. FTIR study showed that the films contained a significant amount of hydrogen and, as a result of an increase in the Ag content in the hydrogenated DLC film, $sp^{2}$ bond content also increased. The TEM cross sectional studies revealed that crystalline Ag particles were formed with a size in the range of 2–4 nm throughout an amorphous DLC matrix.

  5. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  6. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Directory of Open Access Journals (Sweden)

    Yaser Abdulraheem

    2014-05-01

    Full Text Available An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si wafers by plasma enhanced chemical vapor deposition (PECVD. The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause

  7. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  8. Effect of substrate temperature and input power on TiN film deposition by low-frequency (60 Hz) PECVD

    CERN Document Server

    Kim, H T; Han, D H; Park, D K

    2000-01-01

    Titanium nitride (TiN) thin films were prepared by low-frequency (60 Hz) plasma-enhanced chemical-vapor deposition (LF-PECVD) using a mixture of TiCl sub 4 and N sub 2 as source materials and H sub 2 as an atmospheric material. The LF sub P ECVD can be used as a new method for process control at a lower deposition temperature, and the apparatus is simpler than others. The effects of the substrate temperature and the input power on the characteristics of the TiN films deposited by using LF-PECVD were investigated. The SEM results showed that the deposition rate increased as the substrate temperature and the input power increased. The crystalline TiN films had a strong crystallographically preferred orientation of (200) on the XRD patterns. The electrical resistivity of the TiN films had a tendency to decrease with increasing substrate temperature, but did not exhibit any unique tendency with increasing input power. The TiN films had high IR reflection and an edge in the visible region. The reflectance of the f...

  9. Influence of Deposition Temperature on the Structure Of Si3N4 Thin Film Prepared By MWECR-PECVD

    Institute of Scientific and Technical Information of China (English)

    肖化; 陈俊芳; 张镇西

    2004-01-01

    The Si3N4 thin film is prepared by MWECR-PECVD at different deposition temperature and the structure of the Si3N4 thin film is investigated. The results indicate that the structure of the Si3N4 thin film prepared at low deposition temperature is in the amorphous phase. However, when the deposition temperature increases to 280℃, the Si3N4 thin film changes to crystalline -Si3N4 . With a further increase of the deposition temperature, the grain of the Si3N4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure of the Si3N4 thin film prepared at 280℃ is of a crystalline structure.

  10. The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongsheng, E-mail: chysh2003@zzu.edu.cn [Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052 (China); Chen, Xiping; Hao, Xiuli; Lu, Jingxiao; Yang, Shi-e [Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2013-04-01

    In this paper, we have measured the temperature depended growth properties of hydrogenated microcrystalline silicon (μc-Si:H) films, prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) from SiH{sub 4} and H{sub 2} gas mixtures. And, a 1D plasma model coupled with a well-mixed reactor model is used to simulate the growth process, in which concentrations of gas phase species, the crystalline orientation, the hydrogen content and the deposition rate are calculated. It suggests that the increasing surface fraction of the dangling bonds with the increase of substrate temperatures is responsible for the increase in the grain sizes. At the same time, the observed variations of the X-ray-diffraction intensities and the deposition rates of the films with temperature result from the differences in the growth rates of the facets.

  11. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  12. PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    M. Hofmann

    2008-01-01

    Full Text Available A novel plasma-enhanced chemical vapour deposited (PECVD stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing and below 30 cm/s (after forming gas anneal were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

  13. Effect of deposition time on structure of silver nanoparticles embedded in diamond-like carbon matrix made by RF-PECVD method

    Directory of Open Access Journals (Sweden)

    S Abdolghaderi

    2015-01-01

    Full Text Available Silver nanoparticles embedded in DLC matrix, were prepared by co-deposition of RF-Sputtering and RF-PECVD method from acetylene gas and sliver target. The RF power and initial pressure of chamber were fixed. Variations of morphology, optical and electrical properties of these films over time were investigated

  14. FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

    Energy Technology Data Exchange (ETDEWEB)

    Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

    2010-10-25

    Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

  15. A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

    Science.gov (United States)

    Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

    2014-06-11

    Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

  16. Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique

    Energy Technology Data Exchange (ETDEWEB)

    Gope, Jhuma [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Kumar, Sushil, E-mail: skumar@nplindia.org [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sudhakar, S.; Rauthan, C.M.S. [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, P.C. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India)

    2013-08-15

    Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV–visible (UV–Vis) spectroscopy. Different crystalline volume fraction (22%–60%) and band gap (∼1.58 eV–∼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10{sup −4} Ω{sup −1} cm{sup −1}. - Highlights: • Silicon films grown using VHF PECVD at various F{sub silane} (silane flow rate). • Amorphous to nanocrystalline silicon transition at F{sub silane} ∼5 sccm–10 sccm. • Deposition rate increases with the increase of F{sub silane}. • Powder formation occurred beyond 20 sccm of F{sub silane}. • Film grown at 20 sccm shows max. crystalline fraction ∼60% with E{sub g} ∼1.58 eV.

  17. Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates

    Science.gov (United States)

    Amor, Sana Ben; Meddeb, Hosny; Daik, Ridha; Othman, Afef Ben; Slama, Sonia Ben; Dimassi, Wissem; Ezzaouia, Hatem

    2016-01-01

    In this paper, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) under different hydrogen flow rates followed by a thermal treatment in an infrared furnace at different temperature ranging from 300 to 900 °C. The investigated structural, morphological and optoelectronic properties of samples were found to be strongly dependent on the annealing temperature. Raman spectroscopy revealed that nc-Si:H films contain crystalline, amorphous and mixed structures as well. We find that post-deposition thermal treatment may lead to a tendency for structural improvement and a decrease of the disorder in the film network at moderate temperature under 500 °C. As for annealing at higher temperature up to 900 °C induces the recrystallization of the film which is correlated with the grain size and volume fraction in the layer. We demonstrate that high annealing temperature can lead to a decrease of silicon-hydrogen bonds corresponding to a reduction of the amorphous matrix in the layer promoting the formation of covalent Si-Si bonds. The effusion of the hydrogen from the grown film leads to increase its density and therefore induces a decrease in the thickness of the layer. For post-deposition thermal treatment in temperature range under 700 °C, the post-deposition anneal seems to be crucial for obtaining good passivation quality as expressed by a minority carrier lifetime of 17 μs, as it allows a significant reduction in defect states at the layer/substrate interface. While for a temperature higher than 900 °C, the lifetime reduction is obtained because of hydrogen effusion phenomenon, thus a tendency for crystallization in the grown film.

  18. Different index contrast silica-on-silicon waveguides by PECVD

    DEFF Research Database (Denmark)

    Ou, Haiyan

    2003-01-01

    Ge-doped silica-on-silicon waveguides with index steps of 0.01 and 0.02 were fabricated by a combination of plasma enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE) techniques, and their characteristics, including propagation loss, coupling loss with standard singlemode...

  19. The Influence of Silane Gas Flow Rate on Optoelectronic Properties of mc-Si:H Prepared by HWC-VHF-PECVD Technique

    Directory of Open Access Journals (Sweden)

    T. Winata

    2008-09-01

    Full Text Available Hydrogenated microcrystalline silicon (mc-Si:H thin films have been deposited using 10% silane (SiH4 in H2 dilution by Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HWC-VHF-PECVD technique. The resulted thin film characteristics were systematically studied as a function of the deposition parameter. The previous structural studies showed that the structural phase transition from amorphous to microcrystalline thin film was obtained using the filament temperature of 800 oC. In this study, the optoelectronic properties of mc-Si:H thin films were investigated as a function of the silane gas flow rate from 40 sccm to 80 sccm. The highest deposition rate of 3.6 Å/sec and the lower optical bandgap of 1.4 eV were obtained using 80 sccm and 60 sccm of the silane gas flow rate, respectively. The film showed the photosensitivity of 3 x 107, which is quite high above the minimal value of 103 for solar cell application.

  20. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun [Wonkwang University, Iksan (Korea, Republic of)

    2011-01-15

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl{sub 3(aq)} solution, which could then be transferred to the desired substrate.

  1. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

  2. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

  3. A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4{text{-}H2{text{-}}He} PECVD

    Science.gov (United States)

    Losurdo, M.; Giangregorio, M.; Grimaldi, A.; Capezzuto, P.; Bruno, G.

    2004-06-01

    Fully microcrystalline silicon, μc-Si, thin films (polyimide substrates by plasma enhanced chemical vapor deposition (PECVD) using SiF{4}-H{2}-He. The effect of deposition temperature on the structure, i.e., crystallinity and density, of μc-Si films is investigated by spectroscopic ellipsometry in the 1.5 {-}5.5 eV energy range. Modeling of spectroscopic ellipsometry data is used for highlighting crystallinity of the substrate/film interface, i.e., the absence of any amorphous incubation layer. It is found that film crystallinity does not depend on film thickness, and it increases with the decrease of deposition temperature. The temperature dependence is explained on the basis of a like-Arrhenius kinetic analysis of the etching process by atomic fluorine and hydrogen of both μc-Si and a-Si phases.

  4. The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.

    Science.gov (United States)

    Sahu, B B; Yin, Y Y; Tsutsumi, T; Hori, M; Han, Jeon G

    2016-05-14

    Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications.

  5. Synthesis of Anatase Titania Nanostructures at Room Temperature by PECVD Technique

    Institute of Scientific and Technical Information of China (English)

    K.M.K. Srivatsa; Deepak Chhikara; M. Senthil Kumar

    2011-01-01

    titania nanostructures have been synthesized at room temperature by plasma enhanced chemical vapor deposition (PECVD) process on silicon (100) substrates using titanium tetraisopropoxide [Ti(OC3H7)4, TTIP] vapor, argon and oxygen mixtures under various deposition pressures. The deposited titania has been characterized for its structural, morphological and chemical composition by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray (EDX) spectroscopy and Fourier transform infrared (FTIR) spectroscopy recordings. With the variation of deposition pressure, titania assumes various nanostructures viz. nanocrystals, nanoparticles, noanorods and comb-like structure. EDX and FTIR measurements show that the deposited titania is of high chemical purity. The possible growth mechanisms for the observed titania nanostructures have been discussed.

  6. Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Sun Fu-He; Wei Chang-Chun; Sun Jian; Zhang De-Kun; Geng Xin-Hua; Xiong Shao-Zhen; Zhao Ying

    2009-01-01

    This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

  7. Optimized the Parameters in Process of PECVD Deposition Silicon Nitride Film%PECVD氮化硅薄膜工艺参数研究

    Institute of Scientific and Technical Information of China (English)

    张树明; 廖华; 何京鸿; 尹云坤; 胡俊涛; 罗群

    2011-01-01

    According to the structure of solar modules and the performance of encapsulating material, the best antireflection film thickness and refractive index have been designed for silicon solar cell, and the technical parameters have been optimized with TAYLOR formula. Through the experiments, the good deposition parameters have been obtained for CETC-48th tube PECVD equipment.%根据太阳电池组件的结构和封装材料特性,设计出硅太阳电池片减反射薄膜的最佳厚度和折射率,利用泰勒公式进行优化PECVD制备氮化硅薄膜的工艺参数.通过实验,找出适合中电48所工业生产用管式PECVD制备氮化硅薄膜的工艺参数.

  8. Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Torres, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R. [Universidad Autonoma de Ciudad Juarez, Electrical Deparment, Chihuahua (Mexico); Zuniga, C.; Torres-Rios, A.; Monfil, K.; Rosales, P.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico)

    2011-10-25

    In this work we present our results on the deposition and characterization of polymorphous silicon (pm-Si:H) films prepared by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the plasma deposition parameters (as the chamber pressure and gas flow rates of SiH{sub 4} and H{sub 2}) on the structural, electric, and optical characteristics of the films. The temperature dependence of conductivity ({sigma}(T)), activation energy (E{sub a}), optical band gap (E{sub g}) and deposition rate (V{sub d}) were extracted for pm-Si:H films deposited at different pressure values and different gas flow rates. We observed that the chamber pressure is an important parameter that has a significant effect on the electric characteristics, and as well on the morphology of the pm-Si:H films (deduced from atomic force microscopy). It was found an optimal pressure range, in order to produce pm-Si:H films with high E{sub a} and room temperature conductivity, {sigma}{sub RT}, which are key parameters for thermal detection applications.

  9. Fundamental properties of a-SiNx:H thin films deposited by ICP-PECVD for MEMS applications

    Science.gov (United States)

    Dergez, D.; Schalko, J.; Bittner, A.; Schmid, U.

    2013-11-01

    In this study, the impact of deposition conditions on the properties of amorphous hydrogenated silicon nitride (a-SiNx:H) films using an inductively coupled plasma enhanced chemical vapor deposition technique (ICP-CVD) is evaluated. Due to the large number of experiments - even when taking only the most important synthesization parameters into account such as the total pressure in the deposition chamber, the substrate temperature, the ICP power and the flow rate ratio of N2/SiH4 - a design of experiments-based approach is chosen. As expected, the deposition rate strongly depends on the ICP power and the N2/SiH4 flow rate ratio, respectively. Films in the field of investigation deposited with a high flow rate of N2 labeled as Type I show relatively low mechanical stress values between -50 and +200 MPa, but exhibit a strong drift behavior toward compressive stress. Layers deposited at low nitrogen flow rates (Type II), however, yield large compressive stress and are stable as a function of time. The wet etch rate in hydrofluoric acid shows a gap of over two orders of magnitude when comparing the two a-SiNx:H types, indicating strong differences in the chemical composition. Fourier-transform infrared measurements demonstrate that in Type I films the hydrogen is mainly bonded to nitrogen, in contrast to Type II films, where Si-H bonds dominate. Surface related X-ray photoelectron spectroscopy measurements show that Type II layers have higher relative silicon content, while depth profiles yield that the oxygen content Type I films is above 10 at.%. This high oxygen content is proposed to be the result of diffusion of H2O into the layer, causing oxidation, and, as a consequence, the drifting behavior of the intrinsic film stress.

  10. Photonic band gap and defect mode of one-dimensional photonic crystal coated from a mixture of (HMDSO, N2) layers deposited by PECVD

    Science.gov (United States)

    Amri, R.; Sahel, S.; Gamra, D.; Lejeune, M.; Clin, M.; Zellama, K.; Bouchriha, H.

    2017-04-01

    One dimensional photonic crystal based on a mixture of an organic compound HMDSO and nitrogen N2, is elaborated by radiofrequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) at different radiofrequency powers. The variation of the radiofrequency power for a flow of N2/HMDSO ratio equal to 0.4, leads to obtain two kinds of layers A and B with refractive index nA = 2 and nB = 1.55 corresponding to RF power of 200 W and 20 W, respectively. The analysis of the infrared results shows that these layers have the same chemical composition element with different structure. These layers, which exhibit a good indexes difference (nA - nB) contrast, allowed then the elaboration of a one-photonic crystal from the same initial gas mixture, which is the aim of this work. After the optimization of the layers thickness, we have measured transmission and reflection spectra and we found that the photonic band gap (PBG) appears after 15 periods of alternating A and B deposited layers. The introduction of defect in the structure leads to obtain a localized mode in the center of the PBG corresponding to the telecommunication wave length 1.55 μm. Finally, we have successfully interpreted our experimental results by using a theoretical model based on transfer matrix method.

  11. Study of barrier properties and chemical resistance of recycled PET coated with amorphous carbon through a plasma enhanced chemical vapour deposition (PECVD) process.

    Science.gov (United States)

    Cruz, S A; Zanin, M; Nerin, C; De Moraes, M A B

    2006-01-01

    Many studies have been carried out in order to make bottle-to-bottle recycling feasible. The problem is that residual contaminants in recycled plastic intended for food packaging could be a risk to public health. One option is to use a layer of virgin material, named functional barrier, which prevents the contaminants migration process. This paper shows the feasibility of using polyethylene terephthalate (PET) recycled for food packaging employing a functional barrier made from hydrogen amorphous carbon film deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) process. PET samples were deliberately contaminated with a series of surrogates using a FDA protocol. After that, PET samples were coated with approximately 600 and 1200 Angstrons thickness of amorphous carbon film. Then, the migration tests using as food simulants: water, 10% ethanol, 3% acetic acid, and isooctane were applied to the sample in order to check the chemical resistance of the new coated material. After the tests, the liquid extracts were analysed using a solid-phase microextraction device (SPME) coupled to GC-MS.

  12. Research on Silicon Nitride Films Deposited by PECVD Technology%PECVD法氮化硅薄膜制备工艺的研究

    Institute of Scientific and Technical Information of China (English)

    汪文君; 孙建洁; 朱赛宁; 张世权

    2013-01-01

    Silicon nitride thin films were deposited successfully on Si substrates by plasma-enhanced chemical vapor deposition(PECVD). The thickness and refractive index of the thin iflms were tested by ellipsometer and proiflometry, respectively. The inlfuences of silane-ammonia lfow ratio(SAR)and spacing on the performance of silicon nitride thin iflms were studied. Results showed that the thickness and refractive index of thin iflms increased with SAR, and the etching rate in HF decreased rapidly after annealing.%采用等离子体增强化学气相沉积法(PECVD)在单晶硅衬底上制备了氮化硅薄膜,分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响,发现当硅烷氨气流量比增加时,薄膜厚度和折射率均随之增加,并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。

  13. Carbon nanotube growth by PECVD: a review

    Energy Technology Data Exchange (ETDEWEB)

    Meyyappan, M; Delzeit, Lance; Cassell, Alan; Hash, David [NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2003-05-01

    Carbon nanotubes (CNTs), due to their unique electronic and extraordinary mechanical properties, have been receiving much attention for a wide variety of applications. Recently, plasma enhanced chemical vapour deposition (PECVD) has emerged as a key growth technique to produce vertically-aligned nanotubes. This paper reviews various plasma sources currently used in CNT growth, catalyst preparation and growth results. Since the technology is in its early stages, there is a general lack of understanding of growth mechanisms, the role of the plasma itself, and the identity of key species responsible for growth. This review is aimed at the low temperature plasma research community that has successfully addressed such issues, through plasma and surface diagnostics and modelling, in semiconductor processing and diamond thin film growth.

  14. Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

    NARCIS (Netherlands)

    Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2008-01-01

    Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder a

  15. Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

    NARCIS (Netherlands)

    Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2008-01-01

    Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder

  16. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  17. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    Science.gov (United States)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  18. Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

    Science.gov (United States)

    Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

    2016-03-01

    Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

  19. Material and optical properties of low-temperature NH3-free PECVD SiN x layers for photonic applications

    Science.gov (United States)

    Domínguez Bucio, Thalía; Khokhar, Ali Z.; Lacava, Cosimo; Stankovic, Stevan; Mashanovich, Goran Z.; Petropoulos, Periklis; Gardes, Frederic Y.

    2017-01-01

    SiN x layers intended for photonic applications are typically fabricated using LPCVD and PECVD. These techniques rely on high-temperature processing (>400 °C) to obtain low propagation losses. An alternative version of PECVD SiN x layers deposited at temperatures below 400 °C with a recipe that does not use ammonia (NH3-free PECVD) was previously demonstrated to be a good option to fabricate strip waveguides with propagation losses   <3 dB cm-1. We have conducted a systematic investigation of the influence of the deposition parameters on the material and optical properties of NH3-free PECVD SiN x layers fabricated at 350 °C using a design of experiments methodology. In particular, this paper discusses the effect of the SiH4 flow, RF power, chamber pressure and substrate on the structure, uniformity, roughness, deposition rate, refractive index, chemical composition, bond structure and H content of NH3-free PECVD SiN x layers. The results show that the properties and the propagation losses of the studied SiN x layers depend entirely on their compositional N/Si ratio, which is in fact the only parameter that can be directly tuned using the deposition parameters along with the film uniformity and deposition rate. These observations provide the means to optimise the propagation losses of the layers for photonic applications through the deposition parameters. In fact, we have been able to fabricate SiN x waveguides with H content  <20%, good uniformity and propagation losses of 1.5 dB cm-1 at 1550 nm and   <1 dB cm-1 at 1310 nm. As a result, this study can potentially help optimise the properties of the studied SiN x layers for different applications.

  20. Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si:H

    Directory of Open Access Journals (Sweden)

    Kumar Avishek

    2015-01-01

    Full Text Available The impact of the deposition parameters such as gas flow (sccm and RF plasma power density (W/cm2 on the deposition rate of a-Si:H films is systematically investigated. A high deposition rate of up to 146 nm/min at 13.56 MHz is achieved for the a-Si:H films deposited with high lateral uniformity on 30 × 40 cm2 large-area glass substrates. A relationship between the SiH4 gas flow and the RF power density is established. The SiH4 gas flow to RF power density ratio of about 2.4 sccm/mW cm-2 is found to give a linear increase in the deposition rate. The influence of the deposition rate on the material quality is studied using UV-VIS-NIR spectrophotometer and Raman characterisation techniques. Poly-Si thin film with crystal quality as high as 90% of single-crystalline Si wafer is obtained from the SPC of high rate deposited a-Si:H films.

  1. The role of PECVD hard coatings on the performance of industrial tools

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2014-03-01

    Full Text Available The advantages of the application of hard coatings, which are well knownfor cutting tools, are to a much lesser extent explored for casting, extrusion, molding and forming tools. Increasing the lifetime of these tools is an important task in surface engineering because of complex loading conditionsand often complicated tool geometry. The plasma-enhanced chemical vapor deposition (PECVD technique is well suited to deposit hard coatings onto large dies and moulds. The aim of this study was to discuss deposition processes suitable for coating of the often large three-dimensional molds and dies used in metal forming. Furthermore, results obtained using different hard coatings in industrial applications for several case studies like aluminum pressure die-casting; plastics injection molding and sheet metal forming are presented and discussed. For best coating performance, a careful optimization of both substrate pretreatment and coating deposition is necessary. The plasma-enhanced chemical vapor deposition (PECVD technique shows advantages for these applications because of the high flexibility in pre-treatment using chemical etching and plasma-nitriding, because of its ability to coat large complexly shaped tools and because of the possibility of deposition of low-chlorine containing low-friction coatings.

  2. Residual stress determination in PECVD TiN coatings by X-ray diffraction: a parametric study

    DEFF Research Database (Denmark)

    Thomsen, N.B.; Horsewell, Andy; Mogensen, K.S.

    1998-01-01

    The main objective of this research is to study the residual macroscopic stress in titanium-nitride, TiN, coatings deposited onto a tool steer substrate. The measurements were performed with a theta-theta decoupled X-ray diffractometer. The coatings were manufactured using an industrial pulsed......-DC plasma-enhanced chemical vapour deposition (PECVD) technique. The coatings were characterized in terms of microstructure, mechanical and tribological properties. A parametric study of the deposition parameters was performed. Process pressure, bias voltage, temperature and partial gas flows (argon...

  3. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  4. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  5. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  6. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  7. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Funde, A.M.; Bakr, Nabeel Ali; Kamble, D.K. [School of Energy Studies, University of Pune, Pune 411 007 (India); Hawaldar, R.R.; Amalnerkar, D.P. [Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008 (India); Jadkar, S.R. [Department of Physics, University of Pune, Ganeshkhind Road, Pune 411 007 (India)

    2008-10-15

    Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by conventional plasma enhanced chemical vapour deposition (PE-CVD) method at low temperature (200 C) using high rf power. The structural, optical and electrical properties of these films are carefully and systematically investigated as a function of hydrogen dilution of silane (R). Characterization of these films with low angle X-ray diffraction and Raman spectroscopy revealed that the crystallite size in the films tends to decrease and at same time the volume fraction of crystallites increases with increase in R. The Fourier transform infrared (FTIR) spectroscopic analysis showed at low values of R, the hydrogen is predominantly incorporated in the nc-Si:H films in the mono-hydrogen (Si-H) bonding configuration. However, with increasing R the hydrogen bonding in nc-Si:H films shifts from mono-hydrogen (Si-H) to di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2}){sub n} complexes. The hydrogen content in the nc-Si:H films decreases with increase in R and was found less than 10 at% over the entire studied range of R. On the other hand, the Tauc's optical band gap remains as high as 2 eV or much higher. The quantum size effect may responsible for higher band gap in nc-Si:H films. A correlation between electrical and structural properties has been found. For optimized deposition conditions, nc-Si:H films with crystallite size {proportional_to}7.67 nm having good degree of crystallinity ({proportional_to}84%) and high band gap (2.25 eV) were obtained with a low hydrogen content (6.5 at%). However, for these optimized conditions, the deposition rate was quite small (1.6 Aa/s). (author)

  8. PECVD of low-dielectric constant films for ULSI

    Science.gov (United States)

    Shimogaki, Yukihiro

    1998-10-01

    We studied the reduction mechanism of the dielectric constant of F-doped silicon oxide films prepared by PECVD from SiH_4/N_2O/CF4 mixture. From the estimation of the dielectric constant at various frequencies, ranging from 1MHz to 100THz, using CV measurement, Kramers-Kronig relation and the square of the refractive index, we suggest that the dielectric constant due to ionic and electronic polarization is not the dominant factor in decreasing the dielectric constant. It is important to remove -OH in films to obtain very low dielectric constant F-doped silicon oxide films, because Si-OH is the main factor of the orientational polarization in silicon oxide films made by PECVD. To investigate the reaction mechanism which controls the film structure, we changed the residence time of gas in chamber by varying the flow rate. When the residence time in chamber decreases, the film deposition rate increases. We tried to explain flow rate dependency of the deposition rate using a simple CSTR (continuous stirred tank reactor) model. It can be concluded that there are two paths to deposit the films. One route is a deposition by the precursors with poor step coverage profile, and the other route is deposition through intermediates formed by gas phase reactions that contribute to have better step coverage. The overall gas phase reaction rate constant was estimated from these kinetic studies. Same approach was also carried out on the PECVD of C:F film deposition.

  9. Characteristics of nitrogen-doped carbon nanotubes synthesized by using PECVD and thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-Bum; Kong, So-Jeo; Lee, Sung-Youp; Kim, Je-Han; Lee, Hyeong-Rag [Kyungpook National University, Daegu (Korea, Republic of); Kim, Chang-Duk [Kyungpook National University, Sangju (Korea, Republic of); Min, Bong-Ki [Yeungnam University, Gyeongsan (Korea, Republic of)

    2012-04-15

    Nitrogen-doped carbon nanotubes (N-CNTs) are synthesizd by using plasma-enhanced chemical vapor deposition (PECVD) and thermal chemical vapor deposition (TCVD) because PECVD and TCVD are attractive methods for producing N-CNTs. In this paper, we report the experimental observation of nitrogen incorporation in multiwalled carbon nanotubes grown by using these methods. XPS analysis indicates a shift and broadening of the C 1s spectra peak with increasing disorder induced by nitrogen doping. The N 1s XPS spectra of N-CNTs grown by using PECVD show various structures such as graphitic, pyridinic and N-gaseous forms, while N-CNTs grown by using TCVD have only a graphitic form. Each structure affects the electronic properties of N-CNTs in a different way. TCVD provides a more profitable synthesis method for n-type CNTs while PECVD supports the synthesis of activated N-CNTs with no post-treatment.

  10. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  11. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  12. PENUMBUHAN LAPISAN TIPIS SILIKON MIKROKRISTAL TERHIDROGENASI DENGAN TEKNIK HWC-VHF-PECVD

    Directory of Open Access Journals (Sweden)

    Ida Usman

    2012-02-01

    Full Text Available Telah dikembangkan teknik HWC-VHF-PECVD (Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition untuk menumbuhkan lapisan tipis silikon mikrokristal terhidrogenasi (mc-Si:H. Dari hasil penumbuhan lapisan tipis yang dilakukan, teknik HWC-VHF-PECVD memperlihatkan laju deposisi yang lebih tinggi dibandingkan laju deposisi lapisan tipis yang diperoleh dari teknik PECVD maupun teknik VHF-PECVD konvensional. Berdasarkan hasil pengukuran XRD dan SEM, lapisan yang diperoleh pada temperatur filamen yang rendah masih berstruktur amorf. Indikasi yang mengarah pada pembentukan lapisan tipis berstruktur mikrokristalin mulai terlihat pada temperatur filamen ≥ 500oC, dimana puncak-puncak di fraksi spektrum XRD untuk orientasi kristalin tertentu mulai terbentu, sejalan dengan pembentukan butiran-butiran kristalin dari hasil foto SEM permukaan lapisan-lapisan tersebut.

  13. Effect of C/Si Ratio on the Electrochemical Behavior of a-SiCx:H Coatings on SS301 Substrate Deposited by PECVD

    Directory of Open Access Journals (Sweden)

    D. Li

    2014-01-01

    Full Text Available Amorphous hydrogenated silicon carbide (a-SiCx:H coatings were deposited on stainless steel 301 (SS301 using plasma enhanced chemical vapor deposition with the methane gas flow ranging from 30 to 90 sccm. XRD spectra confirmed the amorphous structure of these coatings. The as-deposited coatings all exhibited homogenous dense feature, and no porosities were observed in SEM and AFM analysis. The a-SiCx:H coatings remarkably increased the corrosion resistance of the SS301 substrate. With the increase of the C concentration, the a-SiCx:H coatings exhibited significantly enhanced electrochemical behavior. The a-SiCx:H coating with the highest carbon concentration acted as an excellent barrier to charge transfer, with a corrosion current of 3.5×10-12 A/cm2 and a breakdown voltage of 1.36 V, compared to 2.5×10-8 A/cm2 and 0.34 V for the SS301 substrate.

  14. Efficient Flame Retardant Thin Films Synthesized by Atmospheric Pressure PECVD through the High Co-deposition Rate of Hexamethyldisiloxane and Triethylphosphate on Polycarbonate and Polyamide-6 Substrates.

    Science.gov (United States)

    Hilt, Florian; Gherardi, Nicolas; Duday, David; Berné, Aurélien; Choquet, Patrick

    2016-05-18

    An innovative approach to produce high-performance and halogen-free flame-retardant thin films at atmospheric pressure is reported. PDMS-based coatings with embedded dopant-rich polyphosphates are elaborated thanks to a straightforward approach, using an atmospheric pressure dielectric barrier discharge (AP-DBD). Deposition conditions have been tailored to elaborate various thin films that can match the fire performance requirements. Morphology, chemical composition, and structure are investigated, and results show that the coatings performances are increased by taking advantage of the synergistic effect of P and Si flame retardant compounds. More specifically, this study relates the possibility to obtain flame retardant properties on PolyCarbonate and PolyAmide-6 thanks to their covering by a 5 μm thick coating, i.e. very thin films for this field of application, yet quite substantial for plasma processes. Hence, this approach enables deposition of flame retardant coatings onto different polymer substrates, providing a versatile fireproofing solution for different natures of polymer substrates. The presence of an expanded charred layer at the surface acts as a protective barrier limiting heat and mass transfer. This latter retains and consumes a part of the PC or PA-6 degradation byproducts and then minimizes the released flammable gases. It may also insulate the substrate from the flame and limit mass transfers of remaining volatile gases. Moreover, reactions in the condensed phase have also been highlighted despite the relatively thin thickness of the deposited layers. As a result of these phenomena, excellent performances are obtained, illustrated by a decrease of the peak of the heat release rate (pHRR) and an increase of the time to ignition (TTI).

  15. Silicon surface and bulk defect passivation by low temperature PECVD oxides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.; Rohatgi, A. [Georgia Institute of Technology, Atlanta, GA (United States). Univ. Center of Excellence for Photovoltaics Research and Education; Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

    1995-01-01

    The effectiveness of PECVD passivation of surface and bulk defects in Si, as well as phosphorous diffused emitters, Is investigated and quantified. Significant hydrogen incorporation coupled with high positive charge density in the PECVD SiN layer is found to play an important role in bulk and surface passivation. It is shown that photo-assisted anneal in a forming gas ambient after PECVD depositions significantly improves the passivation of emitter and bulk defects. PECVD passivation of phosphorous doped emitters and boron doped bare Si surfaces is found to be a strong function of doping concentration. Surface recombination velocity of less than 200 cm/s for 0.2 Ohm-cm and less than 1 cm/s for high resistivity substrates ({approximately} Ohm-cm) were achieved. PECVD passivation improved bulk lifetime in the range of 30% to 70% in multicrystalline Si materials. However, the degree of the passivation was found to be highly material specific. Depending upon the passivation scheme, emitter saturation current density (J{sub oe}) can be reduced by a factor of 3 to 9. Finally, the stability of PECVD oxide/nitride passivation under prolonged UV exposure is established.

  16. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  17. Direct imaging of mechanical and chemical gradients across the thickness of graded organosilicone microwave PECVD coatings.

    Science.gov (United States)

    Hall, Colin J; Murphy, Peter J; Griesser, Hans J

    2014-01-22

    The characterization of variations in the chemical composition and ensuing mechanical properties across the thickness of coatings with continuously varying compositions through their thickness (graded coatings) presents considerable challenges for current analytical techniques in materials science. We report here the direct imaging of nanomechanical and chemical gradients across cross-sections of an organosilicone coating fabricated via microwave plasma enhanced chemical vapor deposition (PECVD). Cross-sectional nanoindentation was used to determine the mechanical properties of uniform and graded organosilicone coatings. Both hardness and modulus across the coatings were directly measured. Additionally, "modulus mapping" on cross-sections was used to map the complex modulus. For the graded coating, it was found that variations in the complex modulus was predominantly due to varying storage modulus. It was observed that at the interface with the substrate there was a low storage modulus, which linearly increased to a relatively high storage modulus at the surface. It is proposed that the increase in stiffness, from the substrate interface to the outer surface, is due to the increasing content of a cross-linked O-Si-O network. This mechanical gradient has been linked to a change in the Si:O ratio via direct compositional mapping using ToF-SIMS. Direct mapping of the mechanical and compositional gradients across these protective coatings provides insight into the changes in properties with depth and supports optimization of the critical mechanical performance of PECVD graded coatings.

  18. New low-stress PECVD poly-SiGe layers for MEMS

    NARCIS (Netherlands)

    Rusu, C.R.; Sedky, Sherif; Parmentier, Brigette; Verbist, Agnes; Richard, Olivier; Brijs, Bert; Geenen, Luc; Witvrouw, Ann; Lärmer, Franz; Fischer, Frank; Kronmüller, Silvia; Leca, V.; Otter, A.M.

    2003-01-01

    Thick poly-SiGe layers, deposited by plasma-enhanced chemical vapor deposition (PECVD), are very promising structural layers for use in microaccelerometers, microgyroscopes or for thin-film encapsulation, especially for applications where the thermal budget is limited. In this work it is shown for

  19. Low thermal budget rapid thermal annealing of hydrogenated PECVD silicon thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Farrokh-Baroughi, M.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2006-07-01

    The photovoltaic (PV) market is currently dominated by crystalline silicon solar cells, having a market share of more than 84 per cent. Half of the total price of the PV modules is attributed to the cost of silicon base materials. This paper presented a new approach towards low cost solar cell technologies. In particular, it presented a low temperature plasma enhanced chemical vapor deposition (PECVD) technique for emitter realization. The technique improves the junction quality by a medium temperature low thermal budget rapid thermal annealing (RTA) technique. The many advantages that RTA has for silicon processing was discussed with reference to rapid thermal processing (RTP) used for annealing low temperature deposited silicon thin films. Some of the attractive features of RTP include low cost, minimum overall thermal budget, low power consumption and high throughput. For all the annealed samples in this study which were deposited without hydrogen dilution, 90 per cent of the surface was full of pits caused mainly by hydrogen evolution from the films. It was suggested that high hydrogen dilution can enhance the film quality and reduce the number and size of pits for device applications, particularly for the solar cell applications. However, it was concluded that the growth mechanism of 91 per cent and 99 per cent hydrogen dilution on c-Si and glass substrates using the same process conditions are different and may lead to quasiepitaxial growth mechanism for the films deposited on the crystalline wafers. 21 tabs., 3 tabs., 9 figs.

  20. Isotropic metal deposition technique for metamaterials fabrication

    DEFF Research Database (Denmark)

    Malureanu, Radu; Andryieuski, Andrei; Lavrinenko, Andrei

    2009-01-01

    In this work we will present the first steps taken towards isotropic deposition of thin metallic layers on dielectric substrates. The deposition takes place in aqueous environment thus making it both cheap and easy to be implemented....

  1. Isotropic metal deposition technique for metamaterials fabrication

    DEFF Research Database (Denmark)

    Malureanu, Radu; Andryieuski, Andrei; Lavrinenko, Andrei

    2009-01-01

    In this work we will present the first steps taken towards isotropic deposition of thin metallic layers on dielectric substrates. The deposition takes place in aqueous environment thus making it both cheap and easy to be implemented....

  2. Two-step method preparation of graphene without hydrogen on methanol pretreatment copper substrate by PECVD at low temperature

    Science.gov (United States)

    Han, Linzhi; Liu, JingJing; Zhao, Zhanxia; Chen, Shumin; Ma, Zhongquan; Zhao, Lei

    2016-10-01

    Plasma enhanced chemical vapor deposition (PECVD) is one effective method to prepare graphene at low temperature in a short time. However, the low temperature in PECVD could not provide substrate a proper state for large area and few layer graphene preparation. Herein, we propose a two-step method to grow graphene on Cu foils. In the first step, in order to acquire a smooth and oxide-free surface state, methanol was used as a reductant to pretreat Cu. In the second step, graphene films were prepared on Cu foils by PECVD using CH4 as carbon source with H2-free. Few-layer graphene sheets with diameter about 1 μm under low temperature (700 °C) and at a short time (10 min) on well pretreated Cu foils were successfully gotten. The effect of methanol pretreatment on graphene synthesis and the graphene growth mechanism on Cu substrate by PECVD are analyzed comprehensively.

  3. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  4. Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

    Science.gov (United States)

    Ghaderi, M.; de Graaf, G.; Wolffenbuttel, R. F.

    2016-08-01

    This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from  -100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

  5. Wetting and superhydrophobic properties of PECVD grown hydrocarbon and fluorinated-hydrocarbon coatings

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, D.K., E-mail: dsarkar@uqac.ca [Canada Research Chair on Atmospheric Icing Engineering of Power Networks (INGIVRE) and Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE), Universite du Quebec a Chicoutimi UQAC, 555 Boulevard de l' Universite, Chicoutimi, Quebec, G7H 2B1 (Canada); Farzaneh, M. [Canada Research Chair on Atmospheric Icing Engineering of Power Networks (INGIVRE) and Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE), Universite du Quebec a Chicoutimi UQAC, 555 Boulevard de l' Universite, Chicoutimi, Quebec, G7H 2B1 (Canada); Paynter, R.W. [INRS-EMT, 1650 boul. Lionel-Boulet, Varennes, Quebec, J3X 1S2 (Canada)

    2010-03-15

    Wetting characteristics of micro-nanorough substrates of aluminum and smooth silicon substrates have been studied and compared by depositing hydrocarbon and fluorinated-hydrocarbon coatings via plasma enhanced chemical vapor deposition (PECVD) technique using a mixture of Ar, CH{sub 4} and C{sub 2}F{sub 6} gases. The water contact angles on the hydrocarbon and fluorinated-hydrocarbon coatings deposited on silicon substrates were found to be 72 deg. and 105 deg., respectively. However, the micro-nanorough aluminum substrates demonstrated superhydrophobic properties upon coatings with fluorinated-hydrocarbon providing a water contact angle of {approx}165 deg. and contact angle hysteresis below 2 deg. with water drops rolling off from those surfaces while the same substrates showed contact angle of 135 deg. with water drops sticking on those surfaces. The superhydrophobic properties is due to the high fluorine content in the fluorinated-hydrocarbon coatings of {approx}36 at.%, as investigated by X-ray photoelectron spectroscopy (XPS), by lowering the surface energy of the micro-nanorough aluminum substrates.

  6. Photonic crystal waveguides in PECVD glass

    DEFF Research Database (Denmark)

    Liu, Haoling; Frandsen, Lars Hagedorn; Têtu, Amélie

    Silicon oxynitride (SiON) on silicon has found wide use as a robust and versatileplatform for integrated, optical devices. With plasma-enhanced chemical vapourdeposition (PECVD) the refractive index can be varied all the way from 1.5 (pure silica,SiO2) to 2.0 (pure silicon nitride, Si3N4). We have...

  7. Comparison of different experimental techniques used for wax deposition testing

    Energy Technology Data Exchange (ETDEWEB)

    Allenson, Stephen; Johnston, Angela [Nalco Energy Services, Sugar Land, TX (United States)

    2008-07-01

    Crude oils consist of various fractions of hydrocarbons, including n-paraffins. The paraffins precipitate out of oil below the temperature called WAT (wax appearance temperature) and accumulate in flow lines and pipelines causing major transport problems. Prediction of paraffin deposition is, therefore, a key element of flow assurance programs. The purpose of this study was to develop a general and reliable approach to prediction of wax deposition based on a critical comparison of several practical lab techniques. Wax deposition study was conducted on five separate crude oils by using a varying protocols and equipment. One experimental technique was a cold stress test of wax deposition combined with ketone precipitation of waxy paraffin crystals. Another set of experiments were carried out for wax deposits formed on the surface of U-tubes and cold fingers of different designs. A comparison of the effectiveness of several wax inhibitors was conducted for these crude oils by using the selected deposition techniques. In each test method the amount of precipitated wax was recorded and compared. The deposits were characterized by melting point, qualitative and quantitative analysis of the wax components using DSC, SARA and HTGC analyses. Efficiency of paraffin inhibitors was correlated with a profile of n-paraffins distribution in the deposits. The limitations and advantages of different deposition techniques were analyzed and discussed. (author)

  8. Characterization of wax deposition by different experimental techniques - a comparison

    Energy Technology Data Exchange (ETDEWEB)

    Lindeman, Olga; Allenson, Steve

    2006-03-15

    Crude oils consist of various fractions of hydrocarbons, including n-paraffins. The paraffins precipitate out of oil below the temperature called WAT (wax appearance temperature) and accumulate in flow lines causing major transport problems. Prediction of paraffin deposition is, therefore, a key element of flow assurance programs. The purpose of this study was to develop a general and reliable approach to prediction of wax deposition based on a critical comparison of several practical lab techniques. Wax deposition study was conducted on multiple crude oils using various testing protocols and equipment. One experimental technique was a cold stress test of wax deposition combined with ketone precipitation of waxy paraffin crystals. Another set of experiments was carried out for wax deposits formed on the surface of U-tubes and cold fingers of different designs. A comparison of the effectiveness of several wax inhibitors was conducted for these crude oils by using the selected deposition techniques. In each test method the amount of precipitated wax was recorded and compared. The deposits were characterized by melting point, qualitative and quantitative analysis of the wax components using DSC, SARA and HTGC analyses. Efficiency of paraffin inhibitors was correlated with a profile of n-paraffins distribution in the deposits. The limitations and advantages of different deposition techniques were analyzed and discussed. A new test design designated ''cold tube'' is proposed. (Author) (tk)

  9. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  10. Photonic crystal waveguides in PECVD glass

    DEFF Research Database (Denmark)

    Liu, Haoling; Frandsen, Lars Hagedorn; Têtu, Amélie

    Silicon oxynitride (SiON) on silicon has found wide use as a robust and versatileplatform for integrated, optical devices. With plasma-enhanced chemical vapourdeposition (PECVD) the refractive index can be varied all the way from 1.5 (pure silica,SiO2) to 2.0 (pure silicon nitride, Si3N4). We have...... and preliminary fabrication with the use of e-beamwriting and reactive-ion etching....

  11. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  12. Nanoindentation and AFM studies of PECVD DLC and reactively sputtered Ti containing carbon films

    Indian Academy of Sciences (India)

    A Pauschitz; J Schalko; T Koch; C Eisenmenger-Sittner; S Kvasnica; Manish Roy

    2003-10-01

    Amorphous carbon film, also known as DLC film, is a promising material for tribological application. It is noted that properties relevant to tribological application change significantly depending on the method of preparation of these films. These properties are also altered by the composition of the films. In view of this, the objective of the present work is to compare the nanoindentation and atomic force microscopy (AFM) study of diamond like carbon (DLC) film obtained by plasma enhanced chemical vapour deposition (PECVD) with the Ti containing amorphous carbon (Ti/-C : H) film obtained by unbalanced magnetron sputter deposition (UMSD). Towards that purpose, DLC and Ti/-C : H films are deposited on silicon substrate by PECVD and UMSD processes, respectively. The microstructural features and the mechanical properties of these films are evaluated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), nanoindentation and by AFM. The results show that the PECVD DLC film has a higher elastic modulus, hardness and roughness than the UMSD Ti/-C : H film. It also has a lower pull off force than Ti containing amorphous carbon film.

  13. Improvement Of Tools Durability By Application Of Hybrid Layer Of Nitrided/PECVD Coating.

    OpenAIRE

    Gronostajski Z.; Kaszuba M.; Paschke H.; Zakrzewski T.; Rogaliński G.

    2015-01-01

    In the process of die hot forging the tools are subjected to three main factors leading to their destruction: the intensive thermal shocks, cyclically variable mechanical loads and intensive friction. The above mentioned factors causing destruction in the process of hot forging and warm forging concern mainly the surface of tools. Hybrid technique nitrided/PECVD belong to the latest methods of modifying the properties of the surface layer. In the paper the application of this technique for fo...

  14. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Science.gov (United States)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R. M.

    2015-05-01

    Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  15. Robust Wafer-Level Thin-Film Encapsulation (Packaging) of Microstructures (MEMS) using Low Stress PECVD Silicon Carbide

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Pham, H.T.M.; Sarro, P.M.; French, P.J.

    2009-01-01

    This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide

  16. Robust Wafer-Level Thin-Film Encapsulation (Packaging) of Microstructures (MEMS) using Low Stress PECVD Silicon Carbide

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Pham, H.T.M.; Sarro, P.M.; French, P.J.

    2009-01-01

    This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide

  17. Synthesis of Few-Layer Graphene Using DC PE-CVD

    Science.gov (United States)

    Kim, Jeong Hyuk; Castro, Edward Joseph D.; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-12-01

    Few layer graphene (FLG) had been successfully grown on polycrystalline Ni films or foils on a large scale using DC Plasma Enhanced Chemical Vapor Deposition (DC PE-CVD) as a result of the Raman spectra drawn out of the sample. The size of graphene films is dependent on the area of the Ni film as well as the DC PE-CVD chamber size. Synthesis time has an effect on the quality of graphene produced. However, further analysis and experiments must be pursued to further identify the optimum settings and conditions of producing better quality graphene. Applied plasma voltage on the other hand, had an influence on the minimization of defects in the graphene grown. It has also presented a method of producing a free standing PMMA/graphene membrane on a FeCl3(aq) solution which could then be transferred to a desired substrate.

  18. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  19. PE-CVD fabrication of germanium nanoclusters for memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Duerkop, T. [Institut fuer Materialien und Bauelemente der Elektronik, Leibniz Universitaet Hannover, Appelstrasse 11a, 30167 Hannover (Germany)], E-mail: duerkop@mbe.uni-hannover.de; Bugiel, E. [Institut fuer Materialien und Bauelemente der Elektronik, Leibniz Universitaet Hannover, Appelstrasse 11a, 30167 Hannover (Germany); Costina, I. [IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ott, A.; Peibst, R.; Hofmann, K.R. [Institut fuer Materialien und Bauelemente der Elektronik, Leibniz Universitaet Hannover, Appelstrasse 11a, 30167 Hannover (Germany)

    2008-02-15

    We have investigated Ge nanoclusters (Ge-NC) embedded in silicon dioxide, whose fundamental properties promise improved characteristics in NC flash memory devices as compared to Si nanoclusters. We present a simple new method, based on plasma-enhanced CVD (PE-CVD) deposition of amorphous Ge (a-Ge) onto SiO{sub 2}, to create gate stacks with embedded Ge-NC at vertically well-controlled positions suitable for use in flash memory devices. This process minimizes the exposure of Ge to environmental influences by depositing a-Ge as well as a SiO{sub 2} cap layer in situ within the same deposition chamber. Subsequent high-temperature anneals compatible with the temperature budget of CMOS processing are used for the actual cluster formation. Variation of annealing temperature and duration of this step as well as the thickness of the initial Ge layer controls the average cluster radius and density, as determined by transmission electron microscopy (TEM). Measurements of electrical properties show the capability of samples with NC to store charge.

  20. Fused Deposition Technique for Continuous Fiber Reinforced Thermoplastic

    Science.gov (United States)

    Bettini, Paolo; Alitta, Gianluca; Sala, Giuseppe; Di Landro, Luca

    2017-02-01

    A simple technique for the production of continuous fiber reinforced thermoplastic by fused deposition modeling, which involves a common 3D printer with quite limited modifications, is presented. An adequate setting of processing parameters and deposition path allows to obtain components with well-enhanced mechanical characteristics compared to conventional 3D printed items. The most relevant problems related to the simultaneous feeding of fibers and polymer are discussed. The properties of obtained aramid fiber reinforced polylactic acid (PLA) in terms of impregnation quality and of mechanical response are measured.

  1. Fused Deposition Technique for Continuous Fiber Reinforced Thermoplastic

    Science.gov (United States)

    Bettini, Paolo; Alitta, Gianluca; Sala, Giuseppe; Di Landro, Luca

    2016-12-01

    A simple technique for the production of continuous fiber reinforced thermoplastic by fused deposition modeling, which involves a common 3D printer with quite limited modifications, is presented. An adequate setting of processing parameters and deposition path allows to obtain components with well-enhanced mechanical characteristics compared to conventional 3D printed items. The most relevant problems related to the simultaneous feeding of fibers and polymer are discussed. The properties of obtained aramid fiber reinforced polylactic acid (PLA) in terms of impregnation quality and of mechanical response are measured.

  2. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  3. Process sequence optimization for digital microfluidic integration using EWOD technique

    Science.gov (United States)

    Yadav, Supriya; Joyce, Robin; Sharma, Akash Kumar; Sharma, Himani; Sharma, Niti Nipun; Varghese, Soney; Akhtar, Jamil

    2016-04-01

    Micro/nano-fluidic MEMS biosensors are the devices that detects the biomolecules. The emerging micro/nano-fluidic devices provide high throughput and high repeatability with very low response time and reduced device cost as compared to traditional devices. This article presents the experimental details for process sequence optimization of digital microfluidics (DMF) using "electrowetting-on-dielectric" (EWOD). Stress free thick film deposition of silicon dioxide using PECVD and subsequent process for EWOD techniques have been optimized in this work.

  4. Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Gao Yan-Tao; Zhang Xiao-Dan; Zhao Ying; Sun Jian; Zhu Feng; Wei Chang-Chun; Chen Fei

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (H2+SiH4).Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).

  5. Silicon doping techniques using chemical vapor dopant deposition

    Energy Technology Data Exchange (ETDEWEB)

    Popadic, M.

    2009-11-12

    Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping profiles by low-temperature Si epitaxy is a challenge due to autodoping. In this thesis, these two, apparently unrelated, problems are both addressed as the layer of CVD surface-deposited dopant atoms is used as a doping source. It is demonstrated that a layer of dopants deposited on the Si surface can be used as a doping source by either thermal or laser drive-in for the fabrication of both deep and ultrashallow defect-free junctions. In low-temperature CVD epitaxy, autodoping is a consequence of dopant surface segregation and doping from the surface layer. This process has been characterized, and consequently excellent controllability is achieved. In addition, new results related to the CVD of dopants itself are obtained, and two theoretical achievements are made: the analytical model of arbitrarily shallow junctions is derived, and a new C-V profiling technique suitable for the characterization of ultrashallow junctions is developed.

  6. Study of indium tin oxide thin films deposited on acrylics substrates by Ion beam assisted deposition technique

    OpenAIRE

    Meng Lijian; Liang Erjun; Gao Jinsong; Teixeira, Vasco M. P.; Santos, M. P. dos

    2009-01-01

    Indium tin oxide (ITO) thin films have been deposited onto acrylics (PMMA) substrates by ion beam assisted deposition technique at different oxygen flows. The structural, optical and electrical properties of the deposited films have been characterized by X-ray diffraction, transmittance, FTIR, ellipometry and Hall effect measurements. The optical constants of the deposited films have been calculated by fitting the ellipsometric spectra. The effects of the oxygen flow on the properties of the ...

  7. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    Science.gov (United States)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  8. Improvement Of Tools Durability By Application Of Hybrid Layer Of Nitrided/PECVD Coating.

    Directory of Open Access Journals (Sweden)

    Gronostajski Z.

    2015-09-01

    Full Text Available In the process of die hot forging the tools are subjected to three main factors leading to their destruction: the intensive thermal shocks, cyclically variable mechanical loads and intensive friction. The above mentioned factors causing destruction in the process of hot forging and warm forging concern mainly the surface of tools. Hybrid technique nitrided/PECVD belong to the latest methods of modifying the properties of the surface layer. In the paper the application of this technique for forging tools of constant velocity joint body is presented. The durability of the new tools is much better than the tools applied so far.

  9. Study of nickel silicide formation by physical vapor deposition techniques

    Science.gov (United States)

    Pancharatnam, Shanti

    Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

  10. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    Science.gov (United States)

    Bagolini, Alvise; Savoia, Alessandro Stuart; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Lamberti, Nicola; Caliano, Giosuè

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min-1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm-1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride.

  11. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  12. Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin films for MEMS applications

    Indian Academy of Sciences (India)

    Bhavana Peri; Bikash Borah; Raj Kishora Dash

    2015-08-01

    Low-temperature plasma enhanced chemical vapour deposition (PECVD) deposited silicon carbide (SiC) thin films are promising materials for the development of high-temperature working microelectromechanical system (MEMS) owing to their excellent mechanical properties, non-corrosive nature and ability to withstand high temperature. However, the surface roughness of such thin films is the main obstacle to achieve thicker thin films for MEMS applications as the surface becomes more rougher with the increase in the thickness of PECVD SiC thin films. Therefore, in this present study, thicker SiC thin films were deposited by PECVD process by using CH4 and SiH4 as the precursor gases in the presence of Ar as the carrier gas and two process parameters, i.e., radio frequency (RF) power with mixed frequency condition and flow ratio of silane to methane were varied by keeping the temperature and pressure constant to investigate the influence of these parameters on the growth rate, surface roughness and morphology of SiC thin films. It was observed that both the RF power (with the mixed frequency condition) and flow ratio of SiH4/CH4 can control the growth rate, surface roughness and morphology of the PECVD SiC thin films. Higher the carbon content in the thin films the surface became more smoother, whereas the surface became for rougher by increasing the RF power.

  13. Chemical and Physical Effects of the Carrier Gas on the Atmospheric Pressure PECVD of Fluorinated Precursors

    CERN Document Server

    Hubert, Julie; Mertens, Jérémy; Viville, Pascal; Dufour, Thierry; Barroo, Cédric; de Bocarmé, Thierry Visart; Lazzaroni, Roberto; Reniers, François

    2016-01-01

    The atmospheric pressure PECVD deposition and texturization of hydrophobic coatings using liquid fluorinated C6F12 and C6F14 precursors are investigated. The effect of the carrier gas (argon and helium) is discussed in terms of the behavior of the gas phase and of the characteristics of the deposited film. Mass spectrom-etry measurements indicate that the fragmentation is higher with argon while helium reacts very easily with oxygen impurities leading to the formation of CxFyOz compounds. These observations are consistent with the chemical composition of the films determined by XPS and the variation in the deposition rate. Moreover, the streamers present in the argon discharge affect the morphology of the surface by increasing the roughness, which leads to the increase in the hydrophobicity of the coatings.

  14. Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

    Institute of Scientific and Technical Information of China (English)

    HE Bao-hua; YANG Shi-e; CHEN Yong-sheng; LU Jing-xiao

    2011-01-01

    We present a numerical gas phase reaction model for hydrogenated microcrystaUine silicon (μc-Si:H) films fi'om SiH and H gas mixtures with plasma enhanced chemical vapor deposition (PECVD). Under the typical μc-Si:H deposition conditions, the concentrations of the species in the plasma are calculated and the effects of silane fraction (SF=[SiH]/[H+SiH]) are investigated. The results show that SiH is the key precursor for μc-Si:H films growth, and other neutral radicals, such as SiH, SiH and SiH, may play some roles in the film deposition. With the silane fraction increasing, the precursor concentration increases, but H atom concentration decreases rapidly, which results in the lower H/SiH ratio.

  15. Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD

    Directory of Open Access Journals (Sweden)

    Jingwei Song

    2010-01-01

    Full Text Available Si3N4 nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4 and nitrogen (N2 as reactive gases through plasma-enhanced chemical vapor deposition (PECVD technology. With Fe catalyst, Si3N4 nanowires were developed, indicating that Fe catalyst played a role for Si3N4 molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlong Si3N4 nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model for Si3N4 nanowires was developed. The growth of Si3N4 nanocrystallines was attributed to be a vapor-solid (V-S deposition process.

  16. Design, analysis, and characterization of stress-engineered 3D microstructures comprised of PECVD silicon oxide and nitride

    Science.gov (United States)

    Pi, Chia-Hsing; Turner, Kevin T.

    2016-06-01

    Microelectromechanical systems (MEMS) are typically 2D or quasi-3D structures fabricated using surface and bulk micromachining processes. In this work, an approach for 3D structure fabrication based on stress engineering is demonstrated. Specifically, sub-mm 3D spherical cage-like structures are realized through the deformation of bilayers of residually-stressed silicon oxide and silicon nitride with micrometer-scale thicknesses. Analytical and finite models to predict the shape of stress-engineered structures based on geometry and residual stress are described and used for structure design. A systematic experimental study was performed to quantify residual stresses in silicon nitride films made by plasma-enhanced chemical vapor deposition (PECVD). The measurements show that the residual stress of PECVD silicon nitride can be tuned over a wide range of tensile stresses through the control of deposition parameters, such as flow rate and power. Stress engineered 3D cage-like structures comprised of PECVD silicon nitride and oxide films were fabricated. 3D structures with a range of curvatures were demonstrated. The measured geometry of the fabricated structures are in good agreement with predictions from analytical and finite element models.

  17. XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

    Science.gov (United States)

    Dolo, J. J.; Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Dejene, B. F.

    2010-04-01

    This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd2O2S:Tb3 + thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900°C was found to be the best in terms of the PL intensity of the Gd2O2S:Tb3 + emission. The main emission peak due to the 5D4-7F5 transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd2O3 layer, with small amounts of Gd2S3, on the surface.

  18. Photocatalytic ability of TiO2 porous film prepared by modified spray pyrolysis deposition technique

    National Research Council Canada - National Science Library

    SUGIYAMA, Osamu; OKUYA, Masayuki; KANEKO, Shoji

    2009-01-01

    In a spray pyrolysis deposition (SPD) technique, deposition of film material and formation of surface structure are simultaneously occur, therefore, it is suitable for the preparation of microstructure-controlled thin films...

  19. Experimental measurements of the thermal conductivity of ash deposits: Part 1. Measurement technique

    Energy Technology Data Exchange (ETDEWEB)

    A. L. Robinson; S. G. Buckley; N. Yang; L. L. Baxter

    2000-04-01

    This paper describes a technique developed to make in situ, time-resolved measurements of the effective thermal conductivity of ash deposits formed under conditions that closely replicate those found in the convective pass of a commercial boiler. Since ash deposit thermal conductivity is thought to be strongly dependent on deposit microstructure, the technique is designed to minimize the disturbance of the natural deposit microstructure. Traditional techniques for measuring deposit thermal conductivity generally do not preserve the sample microstructure. Experiments are described that demonstrate the technique, quantify experimental uncertainty, and determine the thermal conductivity of highly porous, unsintered deposits. The average measured conductivity of loose, unsintered deposits is 0.14 {+-} 0.03 W/(m K), approximately midway between rational theoretical limits for deposit thermal conductivity.

  20. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    Science.gov (United States)

    Kirchheim, Dennis; Jaritz, Montgomery; Mitschker, Felix; Gebhard, Maximilian; Brochhagen, Markus; Hopmann, Christian; Böke, Marc; Devi, Anjana; Awakowicz, Peter; Dahlmann, Rainer

    2017-03-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments.

  1. Mechanical strains in pecvd SiN:H films for nanophotonic application

    Institute of Scientific and Technical Information of China (English)

    O. Semenova; A. Kozelskaya; Li Zhi-Yong; Yu Yu-De

    2015-01-01

    Hydrogenated amorphous silicon nitride films (SiNx:H) are deposited at low temperature by high-frequency plasma-enhanced chemical vapor deposition (HF PECVD). The main effort is to investigate the roles of plasma frequency and plasma power density in determining the film properties particularly in stress. Information about chemical bonds in the films is obtained by Fourier transform infrared spectroscopy (FTIR). The stresses in the SiNx:H film are determined from substrate curvature measurements. It is shown that plasma frequency plays an important role in controlling the stresses in SiNx:H films. For silicon nitride layers grown at plasma frequency 40.68 MHz initial tensile stresses are observed to be in a range of 400 MPa–700 MPa. Measurements of the intrinsic stresses of silicon nitride films show that the stress quantity is sufficient for film applications in strained silicon photonics.

  2. A new perspective on structural and morphological properties of carbon nanotubes synthesized by Plasma Enhanced Chemical Vapor Deposition technique

    Science.gov (United States)

    Salar Elahi, A.; Agah, K. Mikaili; Ghoranneviss, M.

    CNTs were produced on a silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs.

  3. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  4. Influence of flow rate on different properties of diamond-like nanocomposite thin films grown by PECVD

    Directory of Open Access Journals (Sweden)

    T. S. Santra

    2012-06-01

    Full Text Available Diamond-like nanocomposite (DLN thin films were deposited on pyrex glass substrate using different flow rate of haxamethyldisiloxane (HMDSO based liquid precursor with nitrogen gas as a glow discharged decomposition by plasma enhanced chemical vapor deposition (PECVD technique. The significant influence of different precursor flow rates on refractive index and thickness of the DLN films was measured by using spectroscopic filmatrics and DEKTAK profilometer. Optical transparency of the DLN thin films was analyzed by UV-VIS-NIR spectrometer. FTIR spectroscopy, provides the information about shifted bonds like SiC2, Si-C, Si-O, C-C, Si-H, C-H, N-H, and O-H with different precursor flow rate. We have estimated the hardness of the DLN films from Raman spectroscopy using Gaussian deconvolution method and tried to investigate the correlation between hardness, refractive index and thickness of the films with different precursor flow rates. The composition and surface morphology of the DLN films were investigated by X-ray photo electron spectroscopy (XPS and atomic force microscopy (AFM respectively. We have analyzed the hardness by intensity ratio (ID/IG of D and G peaks and correlates with hardness measurement by nanoindentation test where hardness increases from 27.8 μl/min to 80.6μl/min and then decreases with increase of flow rate from 80.6μl/min to 149.5μl/min. Finally, we correlates different parameters of structural, optical and tribological properties like film-thickness, refractive index, light transmission, hardness, surface roughness, modulus of elasticity, contact angle etc. with different precursor flow rates of DLN films.

  5. Influence of flow rate on different properties of diamond-like nanocomposite thin films grown by PECVD

    Science.gov (United States)

    Santra, T. S.; Bhattacharyya, T. K.; Tseng, F. G.; Barik, T. K.

    2012-06-01

    Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass substrate using different flow rate of haxamethyldisiloxane (HMDSO) based liquid precursor with nitrogen gas as a glow discharged decomposition by plasma enhanced chemical vapor deposition (PECVD) technique. The significant influence of different precursor flow rates on refractive index and thickness of the DLN films was measured by using spectroscopic filmatrics and DEKTAK profilometer. Optical transparency of the DLN thin films was analyzed by UV-VIS-NIR spectrometer. FTIR spectroscopy, provides the information about shifted bonds like SiC2, Si-C, Si-O, C-C, Si-H, C-H, N-H, and O-H with different precursor flow rate. We have estimated the hardness of the DLN films from Raman spectroscopy using Gaussian deconvolution method and tried to investigate the correlation between hardness, refractive index and thickness of the films with different precursor flow rates. The composition and surface morphology of the DLN films were investigated by X-ray photo electron spectroscopy (XPS) and atomic force microscopy (AFM) respectively. We have analyzed the hardness by intensity ratio (ID/IG) of D and G peaks and correlates with hardness measurement by nanoindentation test where hardness increases from 27.8 μl/min to 80.6μl/min and then decreases with increase of flow rate from 80.6μl/min to 149.5μl/min. Finally, we correlates different parameters of structural, optical and tribological properties like film-thickness, refractive index, light transmission, hardness, surface roughness, modulus of elasticity, contact angle etc. with different precursor flow rates of DLN films.

  6. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  7. Achieving Thin Films with Micro/Nano-Scale Controllable Morphology by Glancing Angle Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    JIANG Shao-Ji; WANG Chao-Yi; TANG Ji-Jia; HU Lin-Xin

    2008-01-01

    @@ We demonstrate that thin films with micro/nanometre controllable morphology can be fabricated by the glancing angle deposition (GLAD) technique which is a physical vapour deposition technique.In this technique, there are parameters which determine the morphology of the thin films: the incident angle, ratio of the deposition rate with respect to the substrate rotation rate, nature of the material being deposited, etc.We fabricate the morphology of column, pillar, helices, zigzag and study the parameters which determine morphology by given some examples of SEM.

  8. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A., E-mail: alessio.perrone@unisalento.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); INFN-Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Gontad, F. [INFN-Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Lorusso, A.; Di Giulio, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Ferrario, M. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

    2013-11-21

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ–2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10{sup −5}) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed. -- Highlights: •Comparison of Pb thin films deposited on Nb substrate by thermal evaporation and pulsed laser deposition (PLD). •Photoelectron performances of Pb thin films. •Good quality of adhesion strength of Pb films deposited by PLD.

  9. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    Science.gov (United States)

    Perrone, A.; Gontad, F.; Lorusso, A.; Di Giulio, M.; Broitman, E.; Ferrario, M.

    2013-11-01

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ-2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10-5) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed.

  10. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  11. Influence of the processing conditions on the structural properties of ZnO layers obtained by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Institute of Optical Materials and Technology ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl.109, 1113 Sofia (Bulgaria)

    2010-11-01

    The plasma enhanced chemical vapor deposition (PECVD) is a powerful and flexible instrument for depositing thin layers, nanocomposites or nanostructures. In this work ZnO layers have been grown by metal-organic PECVD (RF - 13.56 MHz) on Si wafers. Zn acetylacetonate has been used as a precursor and oxygen as oxidant. The influence of the oxygen content in gas mixture, the total pressure, substrate temperature and ZnO seed layer on the structural properties of the layers deposited on Si wafers has been studied. ZnO layer properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD data have shown that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along c-axis direction perpendicular to the substrate surfaces. The results obtained indicate that by controlling the oxygen content in gas mixture, the total pressure and substrate temperature during the film growth one can control the formation of c-axis phase and the crystallite grain size. Nanorods with good alignment, vertically orientated to the substrate surface can be observed in the layers deposited at low content of O{sub 2} in plasma at substrate temperature of 400 {sup o}C. Due to their structural characteristics these layers are potential materials for preparing chemical- and biosensors where inherently large surface to volume ratio of structured materials are important prerequisite for enhanced sensitivity.

  12. Thermionic Properties of Carbon Based Nanomaterials Produced by Microhollow Cathode PECVD

    Science.gov (United States)

    Haase, John R.; Wolinksy, Jason J.; Bailey, Paul S.; George, Jeffrey A.; Go, David B.

    2015-01-01

    Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon-based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.

  13. Influence of Pressure on SiNx:H Film by LF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Zhen-li Wen; Xiao-ning Cao; Chun-lan Zhou; Wen-jing Wang

    2012-01-01

    Hydrogenated silicon nitride films as an effective antireflection and passivation coating of silicon solar cell were prepared on p-type polished silicon substrate (1.0 Ωcm) by direct LF-PECVD (low frequency plasma enhanced chemical vapor deposition) of Centrotherm.The preferable passivation effect was obtained and the refractive index was in the range of 2.017-2.082.The refractive index of the hydrogenated silicon nitride films became larger with the increase of the pressure. Fourier transform infrared spectroscopy was used to study the pressure influence on the film structural properties.The results highlighted high hydrogen bond and high Si-N bonds density in the film,which were greatly influenced by the pressure.The passivation effect of the films was influenced by the Si dangling bonds density.Finally the effective minority liftetime degradation with time was shown and discussed by considering the relationship between the structural properties and passivation.

  14. Fabrication of PECVD-grown fluorinated hydrocarbon nanoparticles and circular nanoring arrays using nanosphere lithography

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, D.K. [Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Atmospheric Icing Engineering of Power Networks (INGIVRE) at Universite du Quebec a Chicoutimi, Quebec (Canada)], E-mail: dsarkar@uqac.ca; Farzaneh, M. [Industrial Chair on Atmospheric Icing of Power Network Equipment (CIGELE) and Canada Research Chair on Atmospheric Icing Engineering of Power Networks (INGIVRE) at Universite du Quebec a Chicoutimi, Quebec (Canada)

    2008-04-30

    Nanosphere lithography (NSL) masks were created by spin-coating of polystyrene particles onto silicon surfaces. Fluorinated hydrocarbon films were coated on the nanosphere lithography masks using plasma-enhanced chemical vapor deposition (PECVD) to obtain ordered arrays of fluorinated hydrocarbon. Atomic force microscope images show hexagonally ordered nanodots of dimension 225 {+-} 11 nm with a height of 23 {+-} 4 nm. Every hexagon encloses a circular ring of diameter 540 {+-} 24 nm having a height and width of 13.5 {+-} 0.6 nm and 203 {+-} 16 nm, respectively. FTIR analysis shows two distinct zones of atomic bonding of CH{sub x} and CF{sub x} in the plasma coated ordered fluorinated hydrocarbon films.

  15. Differential Deposition Technique for Figure Corrections in Grazing Incidence X-ray Optics

    Science.gov (United States)

    Kilaru, Kiranmayee; Ramsey, Brian D.; Gubarev, Mikhail

    2009-01-01

    A differential deposition technique is being developed to correct the low- and mid-spatial-frequency deviations in the axial figure profile of Wolter type grazing incidence X-ray optics. These deviations arise due to various factors in the fabrication process and they degrade the performance of the optics by limiting the achievable angular resolution. In the differential deposition technique, material of varying thickness is selectively deposited along the length of the optic to minimize these deviations, thereby improving the overall figure. High resolution focusing optics being developed at MSFC for small animal radionuclide imaging are being coated to test the differential deposition technique. The required spatial resolution for these optics is 100 m. This base resolution is achievable with the regular electroform-nickel-replication fabrication technique used at MSFC. However, by improving the figure quality of the optics through differential deposition, we aim at significantly improving the resolution beyond this value.

  16. Study of CNT growth using nanocatalyst Ag precursor by HWC-VHF-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Eliyana, Ajeng; Rosikin, Ahmad; Winata, Toto, E-mail: toto@fi.itb.ac.id [Physics of Electronics Material Research Division, Physics Programme, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132, West Java (Indonesia)

    2015-04-16

    The study of CNT growth has been done by using silver (Ag) nanocatalyst as a guide precursor on corning glass 7059 substrate. The silver catalyst was prepared by the evaporation method by varying deposition time for 50, 25, and 14 seconds. The silver films were then annealed at temperature of 400°C for 4 hours. From Scanning Electron Microscope (SEM) and Energy Dispersive X-ray Spectroscopy (EDX) results the grain sizes are 65 nm, 57 nm, and 33 nm, and also the atomic compositions are 6,06%, 4,52%, and 3,73% for 14, 25 and 50 seconds samples, respectively. The 33 nm samples were then used for CNT growth by using Hot Wire Cell (HWC) – Very High Frequency (VHF) – Plasma Enhanced Chemical Vapor Deposition (PECVD) at 275 ° C deposition temperature and pressure of 300 mTorr. The rf power was varied from 8 to 20 watts, with deposition time for 60 minutes. The methane (CH4) 99.999% was used as Carbon sources. Hydrogen gas (H2) was used to etch the oxide layer formed during the pre-deposition process. The diameter and length for the CNT are 125 nm and 1.650 to 2.989 nm respectively.

  17. Bismuth coatings deposited by the pulsed dc sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz, M. F.; Olaya, J. J.; Alfonso, J. E., E-mail: jealfonsoo@unal.edu.co [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Ciencia de Materiales y Superficies, Carrera 45 No. 26-85, Edif. Uriel Gutierrez, Bogota D. C. (Colombia)

    2013-08-01

    In this work we present the results obtained from the deposition of nano-structured bismuth coatings through Dc pulsed unbalanced magnetron sputtering. The coatings were grown on two substrates: silicon and AISI steel 316 L. The microstructure of the Bi coatings grown on silicon and the corrosion resistance of the Bi coatings grown on AISI steel were evaluated. The microstructure was evaluated by X-ray diffraction and the corrosion resistance was characterized by means of polarization potentiodynamic and electrochemical impedance spectroscopy. Finally the morphology of the coatings was evaluated through scanning electronic microscopy. The X-ray diffraction analysis indicates that the coatings are polycrystalline; the corrosion resistance tests indicate that the films with better corrosion resistance were deposited at 40 khz. Scanning electron microscopy micrographs show that the coatings are grown as granular form. (Author)

  18. A new pulsed laser deposition technique: scanning multi-component pulsed laser deposition method.

    Science.gov (United States)

    Fischer, D; de la Fuente, G F; Jansen, M

    2012-04-01

    The scanning multi-component pulsed laser deposition (PLD) method realizes uniform depositions of desired coatings by a modified pulsed laser deposition process, preferably with a femto-second laser-system. Multi-component coatings (single or multilayered) are thus deposited onto substrates via laser induced ablation of segmented targets. This is achieved via horizontal line-scanning of a focused laser beam over a uniformly moving target's surface. This process allows to deposit the desired composition of the coating simultaneously, starting from the different segments of the target and adjusting the scan line as a function of target geometry. The sequence and thickness of multilayers can easily be adjusted by target architecture and motion, enabling inter/intra layer concentration gradients and thus functional gradient coatings. This new, simple PLD method enables the achievement of uniform, large-area coatings. Case studies were performed with segmented targets containing aluminum, titanium, and niobium. Under the laser irradiation conditions applied, all three metals were uniformly ablated. The elemental composition within the rough coatings obtained was fixed by the scanned area to Ti-Al-Nb = 1:1:1. Crystalline aluminum, titanium, and niobium were found to coexist side by side at room temperature within the substrate, without alloy formation up to 600 °C.

  19. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  20. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  1. The Development of a Differential Deposition Technique for Figure Correction in Grazing Incidence Optics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the development of a physical-vapor-deposition coating technique to correct residual figure errors in grazing-incidence optics. The process involves...

  2. Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells

    Directory of Open Access Journals (Sweden)

    Yimao Wan

    2013-03-01

    Full Text Available In this work, we investigate how the film properties of silicon nitride (SiNx depend on its deposition conditions when formed by plasma enhanced chemical vapour deposition (PECVD. The examination is conducted with a Roth & Rau AK400 PECVD reactor, where the varied parameters are deposition temperature, pressure, gas flow ratio, total gas flow, microwave plasma power and radio-frequency bias voltage. The films are evaluated by Fourier transform infrared spectroscopy to determine structural properties, by spectrophotometry to determine optical properties, and by capacitance–voltage and photoconductance measurements to determine electronic properties. After reporting on the dependence of SiNx properties on deposition parameters, we determine the optimized deposition conditions that attain low absorption and low recombination. On the basis of SiNx growth models proposed in the literature and of our experimental results, we discuss how each process parameter affects the deposition rate and chemical bond density. We then focus on the effective surface recombination velocity Seff, which is of primary importance to solar cells. We find that for the SiNx prepared in this work, 1 Seff does not correlate universally with the bulk structural and optical properties such as chemical bond densities and refractive index, and 2 Seff depends primarily on the defect density at the SiNx-Si interface rather than the insulator charge. Finally, employing the optimized deposition condition, we achieve a relatively constant and low Seff,UL on low-resistivity (≤1.1 Ωcm p- and n-type c-Si substrates over a broad range of n = 1.85–4.07. The results of this study demonstrate that the trade-off between optical transmission and surface passivation can be circumvented. Although we focus on photovoltaic applications, this study may be useful for any device for which it is desirable to maximize light transmission and surface passivation.

  3. Nanophotonic Fabrication Self-Assembly and Deposition Techniques

    CERN Document Server

    Yatsui, Takashi

    2012-01-01

    Nanophotonics, a novel optical technology, utilizes the local interaction between nanometric particles via optical near fields. The optical near fields are the elementary surface excitations on nanometric particles, i.e. dressed photons that carry material energy. Of the variety of qualitative innovations in optical technology realized by nanophotonics, this books focuses on fabrication. To fabricate nano-scale photonic devices with nanometer-scale controllability in size and position, we developed a self-assembly method for size- and position-controlled ultra-long nanodot chains using a novel effect of near-field optical desorption. A novel deposition and etching scheme under nonresonant conditions is also demonstrated and its origin is reviewed.

  4. Note: Large area deposition of Rh single and Rh/W/Cu multilayer thin films on stainless steel substrate by pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A. T. T.; Khare, Alika, E-mail: alika@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2014-04-15

    Mirror like thin films of single layer Rh and multilayer Rh/W/Cu are deposited on highly polished 50 mm diameter stainless steel substrate by Pulsed Laser Deposition (PLD) technique for first mirror application in fusion reactors. For this, the conventional PLD technique has been modified by incorporating substrate rastering stage for large area deposition via PLD. Process optimization to achieve uniformity of deposition as estimated from fringe visibility and thickness is also discussed.

  5. A hybrid sequential deposition fabrication technique for micro fuel cells

    Science.gov (United States)

    Stanley, Kevin G.; Czyzewska, Eva K.; Vanderhoek, Tom P. K.; Fan, Lilian L. Y.; Abel, Keith A.; Wu, Q. M. Jonathan; Parameswaran, M. Ash

    2005-10-01

    Micro fuel cell systems have elicited significant interest due to their promise for instantly rechargeable, longer duration and portable power. Most micro fuel cell systems are either built as miniaturized plate-and-frame or silicon-based microelectromechanical systems (MEMS). Plate-and-frame systems are difficult to fabricate smaller than 20 cm3. Existing micro fuel cell designs cannot meet the cost, scale and power requirements of some portable power markets. Traditional MEMS scaling advantages do not apply to fuel cells because the minimum area for the fuel cell is fixed by the catalyst area required for a given power output, and minimum volume set by mass transport limitations. We have developed a new hybrid technique that borrows from both micro and macro machining techniques to create fuel cells in the 1-20 cm3 range, suitable for cell phones, PDAs and smaller devices.

  6. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  7. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  8. PECVD de composes de silicium sur polymeres: Etude de la premiere phase du depot

    Science.gov (United States)

    Dennler, Gilles

    Since their first introduction in the early 90's, transparent barriers against oxygen and/or water vapor permeation through polymers, such as SiO 2, are the object of increasing interest in the food and pharmaceutical packaging industries, and more recently for the encapsulation of organic-based displays. It is now well known that these thin layers possess barrier properties only if they are thicker than a certain critical thickness, dc. For example, dc is around 12 nm in the case of SiO2 on KaptonRTM PI; below this value, the measured "Oxygen Transmission Rate" (OTR, in standard cm3/m2/day/bar) is roughly the same as that of the uncoated polymer. Until now, no detailed research has been carried out to explain this observation, but a hypothesis was proposed in the literature, based on island-like growth structure of the coating for d ≤ dc. According to this hypothesis, the surface energy of the polymeric substrates is so low that the Volmer-Weber (island-coalescence) growth mode occurs. We have aimed to verify this explanation, that is, to study the initial phase of silicon-compound (SiO2 and SiN) growth on four different polymeric substrates, namely polyimide (KaptonRTM PI), polycarbonate (LexanRTM PC), polypropylene (PP), and polyethyleneterephthalate (MylarRTM PET). Three different deposition methods were used, namely reactive evaporation of SiO, radio-frequency (RF) Plasma Enhanced Chemical Vapor Deposition (RF PECVD), and Distributed Electron Cyclotron Resonance (DECR) PECVD. In this latter case, the substrates were placed in three different positions: (i) in the active glow zone, (ii) downstream, and (iii) downstream, but shielded from photon emission (e.g. VUV) from the plasma. Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS), Rutherford Backscattering Spectroscopy (RBS), and Scanning Electron Microscopy (SEM), the latter performed after Reactive Ion Etching (RIE) by oxygen plasma, revealed that growth indeed occurs in a Volmer-Weber mode in the

  9. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    OpenAIRE

    Lorusso, Antonella; Gontad, F.; Broitman, Esteban; Chiadroni, E.; Perrone, Walter

    2015-01-01

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher ...

  10. Passivation effects of atomic-layer-deposited aluminum oxide

    Directory of Open Access Journals (Sweden)

    Kotipalli R.

    2013-09-01

    Full Text Available Atomic-layer-deposited (ALD aluminum oxide (Al2O3 has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2 in combination with a low density of interface states (Dit. This paper investigates the passivation quality of thin (15 nm Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD and Thermal atomic layer deposition (T-ALD. Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2 (20 nm, SiO2 (20 nm deposited by plasma-enhanced chemical vapour deposition (PECVD and hydrogenated amorphous silicon nitride (a-SiNx:H (20 nm also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV. The influence of extracted C-V-G parameters (Qf,Dit on the injection dependent lifetime measurements τ(Δn, and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  11. Passivation effects of atomic-layer-deposited aluminum oxide

    Science.gov (United States)

    Kotipalli, R.; Delamare, R.; Poncelet, O.; Tang, X.; Francis, L. A.; Flandre, D.

    2013-09-01

    Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012-1013 cm-2) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T-ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V-G parameters (Qf,Dit) on the injection dependent lifetime measurements τ(Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  12. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  13. Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

    Indian Academy of Sciences (India)

    Zhang Enlei; Wang Guosheng; Long Xiaozhu; Wang Zhumin

    2014-10-01

    A sample and scalable synthetic strategy was developed for the fabrication of nanocrystalline SiC (nc-SiC) thin film. Thin sheet of nanocrystalline diamond was deposited on Si substrate by hot filamentassisted plasma-enhanced chemical vapour deposition system (HF-PECVD). Further, the resulting carbonbased sheet was heated at 1200 °C to allow a solid state reaction between C and Si substrate to form the SiC thin films. The synthesized films mainly consist of -SiC nanowires with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the [1 1 1] direction and possess a high density of planar defects. The -SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of 400 nm, which is significantly shifted to the blue compared with the reported PL results of SiC materials. The blue shift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires.

  14. P-μc-Si1-xGex:H thin film by VHF-PECVD

    Institute of Scientific and Technical Information of China (English)

    SHANG Ze-ren; ZHANG jian-jun; ZHANG Li-ping; HU Zeng-xin; XUE Jun-ming; ZHAO Ying; GENG Xin-hua

    2008-01-01

    In this paper,a series of boron doped microcrystalline hydrogenated silicon-germanium(p-μc-Si1-xGex:H)was deposited by very high frequency plasma-enhanced chemical vapor deposition(VHF-PECVD)from SiH4 and GeF4 mixtures.The effect of GeF4concentration on films'composition.structure and electrical properties was studied.The resuIts show tllat with the increase of GeF4 concentration,the Ge fraction x increases.The dark conductivity and crystalline volume fraction increase first,and then decrease.When the GC is 4%,p-μc-Si1-xGex:H matefiai with high conductivity,low activation energy(σ=1.68 S/cm,Eg=0.047 eV),high crystalline volume fraction (60%)and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 am was achieved.The experimental results were discussed in detail.

  15. Confirming the key role of Ar+ ion bombardment in growth feature of nanostructured carbon materials by PECVD.

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, J; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-09-20

    In order to confirm the key role of plasma etching in growth feature of nanostructured carbon materials (NCMs), here we reported a novel strategy to in-situ create different states of plasma etching conditions in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from substrate. Different plasma-related environments on either side of the catalyst film were created simultaneously for achieving multi-layered structural NCMs. Results showed that plasma etching is observed crucial and complex for the growth of NCMs. The effect of plasma etching has both positive and negative sides on carbon nanotubes (CNTs). On one hand, plasma etching can break up the structure of CNTs and thus thin CNTs cannot be obtained. On the other hand, plasma etching can remove the redundant carbon on surface of large catalyst particles, contributing to catalyzing thick CNTs. As a result, the diameter of CNTs depends on the state of plasma etching. For vertically oriented few-layer graphene (VFG), plasma etching is an essential asset and strong plasma etching can even change the CNTs into VFG. Therefore, specific multi-layered structural NCMs can be obtained by PECVD combining plasma etching with catalyst separation method, which is promising in many fields. © 2017 IOP Publishing Ltd.

  16. A novel electron beam evaporation technique for the deposition of superconducting thin films

    Science.gov (United States)

    Krishna, M. G.; Muralidhar, G. K.; Rao, K. N.; Rao, G. M.; Mohan, S.

    1991-05-01

    Superconducting thin films of BiSrCaCuO have been deposited using a novel electron beam evaporation technique. In this technique the crucible has a groove around its circumference and rotates continuously during deposition. The source material is loaded in the form of pellets of the composite. Both oxides as well as flourides have been used in the starting material and a comparison of the film properties has been made. The best film was obtained on a MgO(100) substrate with a Tc onset at 85 K and Tc zero at 77 K using calcium flouride in the source material.

  17. PZT thin film deposition techniques, properties and its application in ultrasonic MEMS sensors: a review

    Science.gov (United States)

    Shilpa, G. D.; Sreelakshmi, K.; Ananthaprasad, M. G.

    2016-09-01

    This paper describes an overview of the state of art in PbZrxTi1-xO3 (PZT)ferroelectric thin films and its applications in Micro Electro Mechanical Systems (MEMS). First, the deposition techniques and then the important properties of PZT films such as surface morphology polarization and ferroelectric properties are reviewed. Two major deposition techniques such as sol-gel and Magnetron sputtering are given and compared for the film surface morphology and ferroelectric properties. Finally, the application of PZT thin film in MEMS ultrasonic sensors is discussed.

  18. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  19. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  20. Atomic layer deposition (ALD): A versatile technique for plasmonics and nanobiotechnology.

    Science.gov (United States)

    Im, Hyungsoon; Wittenberg, Nathan J; Lindquist, Nathan C; Oh, Sang-Hyun

    2012-02-28

    While atomic layer deposition (ALD) has been used for many years as an industrial manufacturing method for microprocessors and displays, this versatile technique is finding increased use in the emerging fields of plasmonics and nanobiotechnology. In particular, ALD coatings can modify metallic surfaces to tune their optical and plasmonic properties, to protect them against unwanted oxidation and contamination, or to create biocompatible surfaces. Furthermore, ALD is unique among thin-film deposition techniques in its ability to meet the processing demands for engineering nanoplasmonic devices, offering conformal deposition of dense and ultra-thin films on high-aspect-ratio nanostructures at temperatures below 100 °C. In this review, we present key features of ALD and describe how it could benefit future applications in plasmonics, nanosciences, and biotechnology.

  1. ZnO films deposited by optimized PLD technique with bias voltages

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Hiroyuki; Shitara, Tamae; Komiyama, Takao; Chonan, Yasunori; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Tsuchiya Ebinokuchi, 015-0055 Yuri-Honjo (Japan)

    2010-02-15

    The pulsed laser deposition (PLD) technique with bias voltage application for formation of high quality ZnO films was investigated. Oxygen ambient in the PLD chamber significantly decreased the photoluminescence (PL) intensity of near band edge (NBE) emission. Then, instead of using oxygen ambient, the PLD technique with bias voltage application was optimized to attain the stoichiometric composition of the ZnO films. As the deposition temperature was increased, the X-ray spectrum width diffracted from the (0002) planes was decreased and it showed a minimum value at 700 C. The PL intensity of the NBE emission also had its maximum value for the film deposited at 700 C. For the ZnO films deposited at 700 C, the X-ray spectrum width showed the minimum value under a bias voltage of -50 V. The PL intensity of the NBE emission also had a maximum value under the same bias voltage. Thus, ZnO films deposited under a bias voltage of -50 V at 700 C had strong NBE emission intensities. These results could be explained not only by attaining the stoichiometric composition of the ZnO film but also by decreasing the number of high energy O{sup 2-} ions which caused non-radiative recombination centers in the film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. A comparative study of CdS thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2013-05-01

    Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

  3. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A., E-mail: antonella.lorusso@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Gontad, F. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, Frascati 00044 (Italy); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy)

    2015-03-31

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher temperatures has been observed. X-ray diffraction measurements showed that a preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C while the Pb (200) plane became strongly pronounced with the increase in the substrate temperature. Finally, a Pb thin film deposited on Nb substrate at 30 °C and tested as the photocathode showed interesting results for the application of such a device in superconducting radio frequency guns. - Highlights: • Pb thin films obtained by the nanosecond pulsed laser deposition technique at different substrate temperature. • The substrate temperature modifies the morphology and structure of Pb films. • Pb thin film was deposited at room temperature for photocathode application. • The Pb thin film photocathode was tested and the quantum efficiency of the device improved after laser cleaning treatment of the film surface.

  4. Differential deposition technique for figure corrections in grazing-incidence x-ray optics

    Science.gov (United States)

    Kilaru, Kiranmayee; Ramsey, Brian D.; Gubarev, Mikhail V.; Gregory, Don A.

    2011-10-01

    A differential deposition technique was investigated as a way to minimize axial figure errors in full-shell, grazing-incidence, reflective x-ray optics. These types of optics use a combination of off-axis conic segments--hyperbolic, parabolic, and/or elliptical, to reflect and image x-rays. Several such mirrors or ``shells'' of decreasing diameter are typically concentrically nested to form a single focusing unit. Individual mirrors are currently produced at Marshall Space Flight Center using an electroforming technique, in which the shells are replicated off figured and superpolished mandrels. Several factors in this fabrication process lead to low- and mid-spatial frequency deviations in the surface profile of the shell that degrade the imaging quality of the optics. A differential deposition technique, discussed in this paper, seeks to improve the achievable resolution of the optics by correcting the surface profile deviations of the shells after fabrication. As a proof of concept, the technique was implemented on small-animal radionuclide-imaging x-ray optics being considered for medical applications. This paper discusses the deposition technique, its implementation, and the experimental results obtained to date.

  5. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance 75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  6. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    Science.gov (United States)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  7. A Study of Impedance Relationships in Dual Frequency PECVD Process Plasma

    Science.gov (United States)

    Keil, Douglas; Augustyniak, Edward; Sakiyama, Yukinori; Pecvd/Ald Team

    2016-09-01

    Commercial plasma process reactors are commonly operated with a very limited suite of on-board plasma diagnostics. However, as process demands advance so has the need for detailed plasma monitoring and diagnosis. The VI probe is one of the few instruments commonly available for this task. We present a study of voltage, current, impedance and phase trends acquired by off-the-shelf VI probes in Dual Frequency (DF) 400 kHz/13.56MHz capacitively-coupled plasma (CCP) as typically used for Plasma Enhanced Chemical Vapor Deposition (PECVD). These plasmas typically operate at pressures from 1 to 5 Torr and at RF power levels of 3 W/cm2. Interpretation of DF VI probe impedance trends is challenging. Non-linear interactions are known to exist in plasma impedance scaling with low and high frequency RF power. Simple capacitive sheath models typically do not simultaneously reproduce the impedance observed at each drive frequency. This work will compare VI probe observed DF CCP impedance tends with plasma fluid simulation. Also explored is the agreement seen with sheath models presently available in the literature. Prospects for the creation of useful equivalent circuit models is also discussed.

  8. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  9. TEM studies of Ge nanocrystal formation in PECVD grown SiO2:Ge/SiO2 multilayers

    Science.gov (United States)

    Agan, S.; Dana, A.; Aydinli, A.

    2006-06-01

    We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 °C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 °C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 °C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

  10. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    Science.gov (United States)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  11. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    Science.gov (United States)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.

  12. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  13. A novel PECVD procedure for the room-temperature synthesis of SiO{sub 2} thin films with controlled porosity

    Energy Technology Data Exchange (ETDEWEB)

    Barranco, A.; Yubero, F.; Espinos, J.P.; Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Universidad de Sevilla) and Dpto. de Quimica Inorganica, Sevilla (Spain); Cotrino, J. [Dpto. de Fisica Atomica Molecular y Nuclear, Facultad de Fisica, Universidad de Sevilla, Avda. Reina Mercedes s/n, E-41092 Sevilla (Spain); Contreras, L. [Instituto de Investigaciones Quimicas (CSIC-Universidad de Sevilla) and Dpto. de Quimica Inorganica, Avda. Americo Vespucio s/n (Spain)

    2004-01-01

    Room-temperature synthesis of porous SiO{sub 2} is achieved using a novel PECVD procedure. Porosity of the films is found to directly correlate with the thickness of a sacrificial polymer layer which is removed during the deposition of the oxide thin film. Films prepared with this method are transparent with low refractive index and are very well suited for antireflective coatings and other related optical applications. Membrane-like layers can also be prepared by this method. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  14. Hard and relaxed a-SiNxHy films prepared by PECVD: Structure analysis and formation mechanism

    Science.gov (United States)

    Xu, Xiangdong; He, Qiong; Fan, Taijun; Jiang, Yadong; Huang, Long; Ao, Tianhong; Ma, Chunqian

    2013-01-01

    Amorphous hydrogenated silicon nitride (a-SiNxHy) films were prepared by plasma-enhanced chemical vapor deposition (PECVD). Their chemical structures and mechanical properties were investigated. Results reveal that there are four kinds of Sisbnd N groups, involving Si3N4, Hsbnd Sisbnd N3, H2sbnd Sisbnd N2, and Si3sbnd Sisbnd N, in the a-SiNxHy films. Deposition at 300 °C and flow ratio of SiH4/NH3 = 30/30 sccm leads to the yield of special a-SiNxHy films, in which per two high-N-coordinated Sisbnd N groups (Si3N4 or Hsbnd Sisbnd N3) are distributed with one inter-buffer group (Si3sbnd Sisbnd N). Such a-SiNxHy films exhibit ultralow residual stress (-0.17 MPa), high elastic modulus (206.9 GPa) and high uniformity, holding great potential for device fabrications. The chemical reactions for the formation of a-SiNxHy films were proposed, and the thermodynamic calculations indicate that the utilization ratio of NH3 reagent in the chemical reactions increases significantly with the increase of SiH4 flow, but the utilization ratio of Sisbnd N bonds in the a-SiNxHy formation decreases inversely. This work discloses valuable information on the chemical reactions and structures for a-SiNxHy films, and suggests a route to the preparation of a-SiNxHy films with high hardness and low stress by conventional PECVD.

  15. Study of SnS2 thin film deposited by spin coating technique

    Science.gov (United States)

    Chaki, Sunil H.; Joshi, Hardikkumar J.; Tailor, Jiten P.; Deshpande, M. P.

    2017-07-01

    Thin film deposition of SnS2 was done by spin coating technique at ambient temperature. Deposition was done for different spin speed and spin time. The film thickness dependence on spin speed and spin time was studied. The spin speed was varied from 1000 rpm to 2000 rpm and spin time from 2 s to 6 s for constant speed of 1000 rpm. The elemental composition and crystal structure along with the phase of the as-deposited thin film was determined by the energy dispersive analysis of x-ray (EDAX) and x-ray diffraction (XRD) techniques respectively. The as-deposited thin film was found to be near stoichiometric and possess hexagonal crystal structure with determined lattice parameters in good agreement with the reported values. The crystallite size calculated from the XRD data using Scherrer’s formula and Hall-Williamson relation came out to be 9.77 nm and 6.49 nm, respectively. The transmission electron microscopy (TEM) study of spin deposited thin films showed the film to be continuous. Surface study of the as-deposited thin film was done by simple optical microscope and scanning electron microscope (SEM). The study showed that the deposited thin film to be flat and uniform without visible cracks and pores. The optical spectroscopy study of the as-deposited thin film showed that the optical bandgap value decreases with increase in film thickness. The d.c. electrical resistivity variation with temperature for spin coating as-deposited SnS2 film showed that the resistivity decreases with increase in temperature corroborating the semiconducting nature. The resistivity variation plot possesses two slopes. The temperature ranges showing two slopes lay between 300 to 383 K and 384 to 423 K having activation energy values for the two temperature ranges as 0.072 eV and 0.633 eV, respectively. The achieved results are deliberated in details.

  16. DBD reactor design and optimization in continuous AP-PECVD from HMDSO/N2/N2O mixture

    Science.gov (United States)

    Hotmar, Petr; Caquineau, Hubert; Cozzolino, Raphaël; Gherardi, Nicolas

    2016-02-01

    Dielectric barrier discharge (DBD) deposition of thin films is increasingly studied as a promising alternative to other non-thermal processes such as low-pressure plasma-enhanced chemical vapor deposition (PECVD) or wet-coating. In this paper we demonstrate how optimizing gas injection in the DBD results in an improvement in the reactor performance. We propose to confine the precursor gas close to the deposition substrate by an additional gas flow. The performance of this design is studied though simulation of mass transport. To optimize the deposited thickness, gas cost and reactor clogging, we assess the influence of the confinement, total gas flow rate and DBD length. The confinement is found to reduce reactor clogging, even for long DBD, and increase the deposit thickness. This increase in thickness requires a proportionate increase in the gas flow-rate, making the gas-cost the main limitation of the proposed design. We show, however, that by fine-tuning the operating conditions a beneficial compromise can be obtained between the three optimization objectives.

  17. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  18. Thin films and coatings deposited by vacuum techniques; Capas delgadas y recubrimientos obtenidos mediante tecnicas de vacio

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J. M.; Endrino, J. L.

    2010-07-01

    This paper gives an overview of the various aspects associated with the development of coatings and thin films in all its aspects, from the preparation techniques to the technological applications. It addresses such important issues, such as the comparison of some techniques with others, or the choice of a deposition method to achieve certain characteristics in the deposited layer. (Author) 8 refs.

  19. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides

    Science.gov (United States)

    Ay, F.; Aydinli, A.

    2004-06-01

    Silicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative investigation of bonding structures for the three different layers was performed. Special attention was given to analyze N-H bond stretching absorption at 3300-3400 cm -1. Quantitative results for hydrogen related bonding concentrations are presented based on IR analysis. An annealing study was performed in order to reduce or eliminate this bonding types. For the annealed samples the N-H bond concentration was strongly reduced as verified by FTIR transmittance and ATR spectroscopic methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. Its absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides.

  20. Influence of CdS deposition technique for CdS/CdTe solar cells applications

    Science.gov (United States)

    Rubio, Sandra; Plaza, José Luis; Diéguez, Ernesto

    2014-09-01

    The manufacturing of an optimal window layer is essential for a high efficiency solar cell. CdS thin films were deposited on FTO commercial substrates by two different techniques: Chemical Bath Deposition (CBD), and Closed Space Sublimation (CSS) using SiC rods as electrical heating elements. The composition, morphology, and crystalline structure of the CdS thin films were analyzed by Energy Dispersive X-ray spectroscopy (EDX), Scanning Electron Microscope (SEM), and X-Ray Diffraction (XRD). CdS layers obtained by CSS have shown good stoichiometries of 51.07(Cd at %), and 48.93(S at %), with the presence of disordered microrods of hexagonal shape. The CdS films obtained by CBD exhibited certain contamination from the bath chemical components and a poor defined structure. In conclusion, the layers deposited by electric heating based CSS present a better morphology and crystal structure than the layers deposited by CBD. The CdTe absorber layer deposited by CSS electric heating also shows good cubic structure and morphology.

  1. Lipase immobilization for catalytic applications obtained using fumed silica deposited with MAPLE technique

    Science.gov (United States)

    Bloisi, Francesco; Califano, Valeria; Perretta, Giuseppe; Nasti, Libera; Aronne, Antonio; Di Girolamo, Rocco; Auriemma, Finizia; De Rosa, Claudio; Vicari, Luciano R. M.

    2016-06-01

    Lipases are enzymes used for catalyzing reactions of acylglycerides in biodiesel production from lipids, where enzyme immobilization on a substrate is required. Silica nanoparticles in different morphologies and configurations are currently used in conjunction with biological molecules for drug delivery and catalysis applications, but up to date their use for triglycerides has been limited by the large size of long-chain lipid molecules. Matrix assisted pulsed laser evaporation (MAPLE), a laser deposition technique using a frozen solution/suspension as a target, is widely used for deposition of biomaterials and other delicate molecules. We have carried out a MAPLE deposition starting from a frozen mixture containing fumed silica and lipase in water. Deposition parameters were chosen in order to increase surface roughness and to promote the formation of complex structures. Both the target (a frozen thickened mixture of nanoparticles/catalyst in water) and the deposition configuration (a small target to substrate distance) are unusual and have been adopted in order to increase surface contact of catalyst and to facilitate access to long-chain molecules. The resulting innovative film morphology (fumed silica/lipase cluster level aggregation) and the lipase functionality (for catalytic biodiesel production) have been studied by FESEM, FTIR and transesterification tests.

  2. Status of Plasma Physics Techniques for the Deposition of Tribological Coatings

    Science.gov (United States)

    Spalvins, T.

    1984-01-01

    The plasma physics deposition techniques of sputtering and ion-plating are reviewed. Their characteristics and potentials are discussed in terms of synthesis or deposition of tribological coatings. Since the glow discharge or plasma generated in the conventional sputtering and ion-plating techniques has a low ionization efficiency, rapid advances have been made in equipment design to further increase the ionization efficiency. The enhanced ionization favorably affects the nucleation and growth sequence of the coating. This leads to improved adherence and coherence, higher density, favorable morphological growth, and reduced internal stresses in the coatings. As a result, desirable coating characteristics can be precision tailored. Tribological coating characteristics of sputtered solid film lubricants such as MoS2, ion-plated soft gold and lead metallic films, and sputtered and ion-plated wear-resistant refractory compound films such as nitrides and carbides are discussed.

  3. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

    Directory of Open Access Journals (Sweden)

    J.K. Rath

    2010-01-01

    Full Text Available Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD and transmission electron microscopy (TEM have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

  4. Effect of deposition technique of Ni on the perpendicular magnetic anisotropy in Co/Ni multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Akbulut, S., E-mail: sakbulut@gtu.edu.tr [Gebze Technical University, Physics Department, Istanbul Cad, PK 41400 Gebze/Kocaeli (Turkey); Akbulut, A. [Gebze Technical University, Physics Department, Istanbul Cad, PK 41400 Gebze/Kocaeli (Turkey); Özdemir, M. [Marmara University, Physics Department, Göztepe, Istanbul (Turkey); Yildiz, F., E-mail: fyildiz@gtu.edu.tr [Gebze Technical University, Physics Department, Istanbul Cad, PK 41400 Gebze/Kocaeli (Turkey)

    2015-09-15

    The perpendicular magnetic anisotropy (PMA) of Si/Pt 3.5/(Co 0.3/Ni 0.6){sub n} /Co 0.3/ Pt 3 (all thicknesses are nm) multilayers were investigated for two different sample sets by using ferromagnetic resonance (FMR) and magnetooptic Kerr effect (MOKE) techniques. In the first sample set all layers (buffer, cap, Co and Ni) were grown by magnetron sputtering technique while in the second sample set Ni sub-layers were grown by molecular beam epitaxy (MBE) at high vacuum. Apart from deposition technique of Ni, all other parameters like thicknesses and growth rates of each layers are same for both sample sets. Multilayers in these two sample sets display PMA in the as grown state until a certain value of bilayer repetition (n) and the strength of PMA decreases with increasing n. Magnetic easy axis's of the multilayered samples switched from film normal to the film plane when n is 9 and 5 for the first and second sample sets, respectively. The reason for that, PMA was decreased due to increasing roughness with increasing n. This was confirmed by X Ray Reflectivity (XRR) measurements for both sample sets. Moreover, in the first sample set coercive field values are smaller than the second sample set, which means magnetic anisotropy is lower than the latter one. This stronger PMA is arising due to existence of stronger Pt (111) and Co/Ni (111) textures in the second sample set. - Highlights: • Effect of deposition techniques for Ni sub-layers on magnetic properties in [Co/Ni]{sub n} multilayered films was studied. • Ni sub-layers were deposited by two different techniques, molecular beam epitaxy (MBE) and magnetron sputtering. • Spin reorientation thickness and magnitude of the anisotropy are strongly depending on growing techniques.

  5. Facile Route to NiO Nanostructured Electrode Grown by Oblique Angle Deposition Technique for Supercapacitors.

    Science.gov (United States)

    Kannan, Vasudevan; Inamdar, Akbar I; Pawar, Sambaji M; Kim, Hyun-Seok; Park, Hyun-Chang; Kim, Hyungsang; Im, Hyunsik; Chae, Yeon Sik

    2016-07-13

    We report an efficient method for growing NiO nanostructures by oblique angle deposition (OAD) technique in an e-beam evaporator for supercapacitor applications. This facile physical vapor deposition technique combined with OAD presents a unique, direct, and economical route for obtaining high width-to-height ratio nanorods for supercapacitor electrodes. The NiO nanostructure essentially consists of nanorods with varying dimensions. The sample deposited at OAD 75° showed highest supercapacitance value of 344 F/g. NiO nanorod electrodes exhibits excellent electrochemical stability with no degradation in capacitance after 5000 charge-discharge cycles. The nanostructured film adhered well to the substrate and had 131% capacity retention. Peak energy density and power density of the NiO nanorods were 8.78 Wh/kg and 2.5 kW/kg, respectively. This technique has potential to be expanded for growing nanostructured films of other interesting metal/metal oxide candidates for supercapacitor applications.

  6. Nano-yttria dispersed stainless steel composites composed by the 3 dimensional fiber deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Verhiest, K., E-mail: Katelijne.Verhiest@ArcelorMittal.com [ArcelorMittal Gent, Hot Strip Mill Department, J. Kennedylaan 51, 9042 Ghent (Belgium); Belgian Nuclear Research Centre, SCK-CEN, Boeretang 200, 2400 Mol (Belgium); Ghent University, UGent, Department of Materials Science and Engineering (DMSE), Technologiepark 903, 9052 Ghent (Belgium); Mullens, S. [Flemish Institute for Technological Research, VITO, Materials Technology, Boeretang 200, 2400 Mol (Belgium); De Wispelaere, N.; Claessens, S. [ArcelorMittal Research Industry Gent, OCAS, J. Kennedylaan 3, 9060 Zelzate (Belgium); DeBremaecker, A. [Belgian Nuclear Research Centre, SCK-CEN, Boeretang 200, 2400 Mol (Belgium); Verbeken, K. [Ghent University, UGent, Department of Materials Science and Engineering (DMSE), Technologiepark 903, 9052 Ghent (Belgium)

    2012-09-15

    In this study, oxide dispersion strengthened (ODS) 316L steel samples were manufactured by the 3 dimensional fiber deposition (3DFD) technique. The performance of 3DFD as colloidal consolidation technique to obtain porous green bodies based on yttria (Y{sub 2}O{sub 3}) nano-slurries or paste, is discussed within this experimental work. The influence of the sintering temperature and time on sample densification and grain growth was investigated in this study. Hot consolidation was performed to obtain final product quality in terms of residual porosity reduction and final dispersion homogeneity.

  7. HiPIMS: a New Generation of Film Deposition Techniques for SRF Applications

    Energy Technology Data Exchange (ETDEWEB)

    Valente-Feliciano, Anne-Marie [JLAB

    2013-09-01

    Over the years, Nb/Cu technology, despite its shortcomings due to the commonly used magnetron sputtering, has positioned itself as an alternative route for the future of accelerator superconducting structures. Avenues for the production of thin films tailored for Superconducting RF (SRF) applications are showing promise with recent developments in ionized PVD coating techniques, i.e. vacuum deposition techniques using energetic ions. Among these techniques, High power impulse magnetron sputtering (HiPIMS) is a promising emerging technique which combines magnetron sputtering with a pulsed power approach. This contribution describes the benefits of energetic condensation for SRF films and the characteristics of the HiPIMS technology. It describes the on-going efforts pursued in different institutions to exploit the potential of this technology to produce bulk-like Nb films and go beyond Nb performance with the development of film systems, based on other superconducting materials and multilayer structures.

  8. A lithium depth-marker technique for rapid erosion and deposition measurements

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, R.M., E-mail: rsulli@psfc.mit.edu; Pang, A.; Martinez-Sanchez, M.; Whyte, D.G.

    2014-01-15

    Highlights: • Rutherford backscattering spectrometry (RBS) to determine the change in depth. • Rutherford backscattering spectrometry (RBS) to determine the change in depth. • Rutherford backscattering spectrometry (RBS) to determine the change in depth. -- Abstract: A novel, high-resolution technique has been developed for the measurement of erosion and deposition in solid material surfaces. The technique uses a combination of nuclear reaction analysis (NRA) and Rutherford backscattering spectrometry (RBS) to determine the change in depth of a previously implanted marker layer consisting of {sup 7}Li. A scoping study shows that {sup 7}Li is an ideal marker candidate due to a high Q (∼18 MeV) nuclear reaction, {sup 7}Li(p,α){sup 4}He. Net erosion or deposition is measured by NRA of modified alpha energy passing through the bulk material. The reaction’s high cross-section provides for the fast time resolution needed to measure erosion from high flux plasmas, and a highly penetrating proton beam provides for a large range of erosion/deposition measurements. Additionally, the implantation of low-Z Li leads to relatively low vacancy concentrations in the solid material due to implantation. This technique thus provides greater assurance that the measured erosion rate is indicative of the solid material: due to both the low vacancy production and the fact that no films or deposits are involved. Validation was performed by comparing the measured and predicted amount of erosion based on previously measured sputtering yields; the two were found to agree, within the uncertainty of the experiment. The depth resolution of the techniques is ∼60 nm at a net erosion depth of about 1 μm. The benefits of this technique are summarized as: short time scales (minutes) to obtain results, the marker layer can be used in any solid material, greater assurance that the measured erosion is indicative of the unperturbed solid material, and the continuous monitoring of the

  9. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  10. Magnetic and optical properties of the nickel thin film deposited by GLAD technique

    Directory of Open Access Journals (Sweden)

    Potočnik Jelena M.

    2014-01-01

    Full Text Available In this work, nickel thin film was deposited on glass sample using Glancing Angle Deposition (GLAD technique, to a thickness of 1 μm. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The nickel thin film was characterized by Atomic Force Microscopy (AFM, Magneto- Optical Kerr effect Microscopy and Spectroscopic Ellipsometry. According to an AFM cross-section imaging, it was found that the nickel thin film has a columnar structure. The values of the coercively, obtained from the magnetic hysteresis loops, were analyzed as a function of the sample rotation in the magnetic field. It was found that the direction of magnetization easy axis lies toward the structure growth. Optical properties of the nickel thin film were studied at the wavelength of 455 nm. From the shape of the refractive index and the extinction coefficient diagrams could be concluded that the nickel thin film has an optical anisotropy.

  11. Multifunctional thin films of lactoferrin for biochemical use deposited by MAPLE technique

    Science.gov (United States)

    Constantinescu, Catalin; Palla-Papavlu, Alexandra; Rotaru, Andrei; Florian, Paula; Chelu, Florica; Icriverzi, Madalina; Nedelcea, Anca; Dinca, Valentina; Roseanu, Anca; Dinescu, Maria

    2009-03-01

    Lactoferrin (Lf) is an iron-binding glycoprotein present in almost all mammalian secretions which plays an important role in host defense against microbial and viral infections. The protein has been reported to also have anti-inflammatory activity and antitumoral effects in vitro and in vivo. Thin films of Lf were deposited on silicon, quartz and Thermanox plastic coverslip substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique, using a Nd:YAG laser working at 266 nm, at different laser fluences (0.1-0.8 J cm -2). The deposited layers have been characterized by Fourier Transformed Infra-Red spectroscopy (FTIR), and the morphology of the various substrates was investigated by Atomic Force Microscopy (AFM). The biocompatibility of lactoferrin thin films was evaluated for each substrate, by in vitro biochemical tests.

  12. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

    Directory of Open Access Journals (Sweden)

    D. Lopez-Diaz

    2015-11-01

    Full Text Available Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  13. Factors affecting the superconductivity in the process of depositing Nd1.85Ce0.15CuO4-δ by the pulsed electron deposition technique

    Institute of Scientific and Technical Information of China (English)

    GUO; YanFeng

    2007-01-01

    On SrTiO3 single crystal substrate, by using the pulsed electron deposition technique, the high-quality electron doped Nd1.85Ce0.15CuO4-δsuperconducting film was successfully fabricated. After careful study on the R-T curves of the obtained samples deposited with different substrate temperatures, thicknesses, annealing methods and pulse frequencies, the effects of them on the superconductivity of the films were found, and the reasons were also analyzed. Additionally, by using the same model of the pulsed laser deposition technique, the relation between the target-to-substrate distance and the deposition pressure was drawn out as a quantitative one.  ……

  14. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  15. Detection of Atmospheric Water Deposits in Porous Media Using the TDR Technique

    Directory of Open Access Journals (Sweden)

    Anna Nakonieczna

    2015-04-01

    Full Text Available Investigating the intensity of atmospheric water deposition and its diurnal distribution is essential from the ecological perspective, especially regarding dry geographic regions. It is also important in the context of monitoring the amount of moisture present within building materials in order to protect them from excessive humidity. The objective of this study was to test a constructed sensor and determine whether it could detect and track changes in the intensity of atmospheric water deposition. An operating principle of the device is based on the time-domain reflectometry technique. Two sensors of different plate volumes were manufactured. They were calibrated at several temperatures and tested during field measurements. The calibration turned out to be temperature independent. The outdoor measurements indicated that the upper limits of the measurement ranges of the sensors depended on the volumes of the plates and were equal to 1:2 and 2:8 mm H2O. The respective sensitivities were equal to 3.2 x 10-3 and 7.5 x 10-3 g∙ps-1. The conducted experiments showed that the construction of the designed device and the time-domain reflectometry technique were appropriate for detecting and tracing the dynamics of atmospheric water deposition. The obtained outcomes were also collated with the readings taken in an actual soil sample. For this purpose, an open container sensor, which allows investigating atmospheric water deposition in soil, was manufactured. It turned out that the readings taken by the porous ceramic plate sensor reflected the outcomes of the measurements performed in a soil sample.

  16. PECVD法制备纳米晶硅薄膜的研究进展%Research Progress on Nanocrystalline Silicon Thin Films Prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    何佳; 邱海宁; 郑祺

    2012-01-01

    简要介绍了纳米晶硅薄膜的微结构表征方法,重点讨论了PECVD制备方法中工艺参数对薄膜结构的影响,并探讨了氢在薄膜形成和生长中的作用.通过优化氢稀释率、衬底温度、反应气压、激励功率和激发频率等工艺参数可提高纳米晶硅薄膜的晶化率并改善薄膜质量.结合喇曼光谱、X射线衍射谱、傅里叶红外光谱和高分辨透射电镜等表征方法可深入研究薄膜形成机理,对进一步探索薄膜光电特性有重要意义.分析了等离子体化学气相沉积(PECVD)制备方法中各工艺参数对薄膜质量和沉积速率的影响,指出其存在的问题,并探寻了今后的研究方向.%The measurement methods to characterize the nanocrystalline silicon thin film micro-structure are introduced with the emphasis on the discussion of the influence of the plasma enhanced chemical vapor deposition (PECVD) process parameters on the thin film microstructure, and the effects of the hydrogen on the formation and growth of nanocrystalline silicon thin films are presented. The crystalline fraction and other properties of the nanocrystalline silicon thin films can be improved by optimizing the process parameters, such as the hydrogen dilution, substrate temperature, reaction pressure, driving power and excitation frequency. The film formation mechanism can be obtained by Raman spectroscopy, X-ray diffraction spectrum, Fourier transform infrared spectroscopy, high-resolution transmission electron microscope and other characterize methods, which is significant for the further study of the photoelectric properties of the films. The effects of the process parameters of the PECVD method on the film quality and deposition rate are analyzed. The limitations of the PECVD method and the development tendency in the future are presented.

  17. The "Hoover" (vacuum cleaner) technique for calcifying tendonitis deposits excision and removal of the calcific debris.

    Science.gov (United States)

    Ehud, Atoun; Ehud, Rath; Alexander, Van Tongel; Ali, Narvani; Giusseppe, Sforza; Ofer, Levy

    2012-07-01

    A new technical tip for the improvement of the arthroscopic treatment of symptomatic calcifying tendinitis is described. Arthroscopic excision of calcifying tendonitis may result with multiple minute calcific debris in the subacromial bursa, causing severe post operative pain due to chemical irritation of the bursa. We suggest the use of a bladeless shaver barrel as a "Hoover" (vacuum cleaner) for arthroscopic clearance of these miniature calcific debris from the subacromial space after resection of the major deposits. The use of this technique resulted in good clinical outcome with improved post operative pain.

  18. High T(sub c) superconductors fabricated by plasma aerosol mist deposition technique

    Science.gov (United States)

    Wang, X. W.; Vuong, K. D.; Leone, A.; Shen, C. Q.; Williams, J.; Coy, M.

    1995-01-01

    We report new results on high T(sub c) superconductors fabricated by a plasma aerosol mist deposition technique, in atmospheric environment. Materials fabricated are YBaCuO, BiPbSrCaCuO, BaCaCuO precursor films for TlBaCaCuO, and other buffers such as YSZ. Depending on processing conditions, sizes of crystallites and/or particles are between dozens of nano-meters and several micrometers. Superconductive properties and other material characteristics can also be tailored.

  19. The "Hoover" (vacuum cleaner technique for calcifying tendonitis deposits excision and removal of the calcific debris

    Directory of Open Access Journals (Sweden)

    Atoun Ehud

    2012-01-01

    Full Text Available A new technical tip for the improvement of the arthroscopic treatment of symptomatic calcifying tendinitis is described. Arthroscopic excision of calcifying tendonitis may result with multiple minute calcific debris in the subacromial bursa, causing severe post operative pain due to chemical irritation of the bursa. We suggest the use of a bladeless shaver barrel as a "Hoover" (vacuum cleaner for arthroscopic clearance of these miniature calcific debris from the subacromial space after resection of the major deposits. The use of this technique resulted in good clinical outcome with improved post operative pain.

  20. Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

    Science.gov (United States)

    Hou, Guo-Fu; Geng, Xin-Hua; Zhang, Xiao-Dan; Sun, Jian; Zhang, Jian-Jun; Zhao, Ying

    2011-07-01

    A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si-H stretching mode shifts from 2000 cm-1 to 2100 cm-1, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm-1 to 620 cm-1. At the same time the SiH/Hα intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of Hα and SiH intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.

  1. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-01

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (˜0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  2. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  3. Application of silver nanodendrites deposited on silicon in SERS technique for the trace analysis of paraquat

    Science.gov (United States)

    Cao Dao, Tran; Quynh Ngan Luong, Truc; Cao, Tuan Anh; Kieu, Ngoc Minh; Le, Van Vu

    2016-03-01

    In order to detect trace concentrations of organic or biological molecules by surface-enhanced Raman scattering (SERS) technique, the SERS-active substrates with high enhancement factor are required. The silver nanodendrites (AgNDs) are a growing class of such SERS-active substrates. This report presents the preliminary results of the trace detection of paraquat (PQ), a commonly used herbicide, with the use of SERS-active substrates, which have been made from AgNDs deposited on silicon. The AgNDs were produced either by electroless deposition, or by electrodeposition onto a silicon wafer, using aqueous solution of HF and AgNO3. It was observed that the silver dendrites are formed only when AgNO3 concentration is high enough. Next, it was found that with the additional assistance of an electric potential in the electrodeposition, the dendrites have grown up with the more perfect ramification. The AgNDs with more perfect branching gave the Raman spectrum of PQ with higher enhancement factor. More specifically, while the SERS-active substrates prepared from electrodeposited AgNDs were able to detect PQ with concentration as low as 0.01 ppm, the ones made from electroless deposited AgNDs could only detect PQ at concentration of hundreds times higher.

  4. Effect of thickness on optical properties of nickel vertical posts deposited by GLAD technique

    Science.gov (United States)

    Potočnik, J.; Nenadović, M.; Bundaleski, N.; Popović, M.; Rakočević, Z.

    2016-12-01

    Nickel (Ni) thin films of different thicknesses (25 nm to 150 nm) were deposited on glass substrates using Glancing Angle Deposition technique. Characterization of obtained Ni films was performed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and by four-point probe method. Variations in optical parameters with thickness correlated with structural, chemical and electrical properties of nanostructured nickel thin films were studied. The results showed that deposit is porous and consists of nano-scaled columns, which grow perpendicular to the substrate. It was found that the size of the columns and the surface roughness change with film thickness. Spectroscopic ellipsometry revealed that the refractive index and extinction coefficient varied with thickness, which can be correlated with changes in microstructure of Ni films. Additionally, the relationship between the film microstructure and its resistivity was also analyzed. It was found that the variations in Ni films resistivity could be attributed to the changes in the width of the columns. The increasing of layer thickness leads to overall decrease of optical resistivity of nickel thin films.

  5. Strengthening of 3D printed fused deposition manufactured parts using the fill compositing technique.

    Directory of Open Access Journals (Sweden)

    Joseph T Belter

    Full Text Available In this paper, we present a technique for increasing the strength of thermoplastic fused deposition manufactured printed parts while retaining the benefits of the process such as ease, speed of implementation, and complex part geometries. By carefully placing voids in the printed parts and filling them with high-strength resins, we can improve the overall part strength and stiffness by up to 45% and 25%, respectively. We discuss the process parameters necessary to use this strengthening technique and the theoretically possible strength improvements to bending beam members. We then show three-point bend testing data comparing solid printed ABS samples with those strengthened through the fill compositing process, as well as examples of 3D printed parts used in real-world applications.

  6. Detecting salt deposition on a wind turbine blade using laser induced breakdown spectroscopy technique

    Science.gov (United States)

    Sathiesh Kumar, V.; Vasa, Nilesh J.; Sarathi, R.

    2013-07-01

    The study of pollution performance on a wind turbine blade due to lightning is important, as it can cause major damage to wind turbine blades. In the present work, optical emission spectroscopy (OES) technique is used to understand the influence of pollutant deposited on a wind turbine blade in an off-shore environment. A methodical experimental study was carried out by adopting IEC 60507 standards, and it was observed that the lightning discharge propagates at the interface between the pollutant and the glass fiber reinforced plastic (Material used in manufacturing of wind turbine blades). In addition, as a diagnostic condition monitoring technique, laser-induced breakdown spectroscopy (LIBS) is proposed and demonstrated to rank the severity of pollutant on the wind turbine blades from a remote area. Optical emission spectra observed during surface discharge process induced by lightning impulse voltage is in agreement with the spectra observed during LIBS.

  7. 3D fibre deposition and stereolithography techniques for the design of multifunctional nanocomposite magnetic scaffolds.

    Science.gov (United States)

    De Santis, Roberto; D'Amora, Ugo; Russo, Teresa; Ronca, Alfredo; Gloria, Antonio; Ambrosio, Luigi

    2015-10-01

    Magnetic nanocomposite scaffolds based on poly(ε-caprolactone) and poly(ethylene glycol) were fabricated by 3D fibre deposition modelling (FDM) and stereolithography techniques. In addition, hybrid coaxial and bilayer magnetic scaffolds were produced by combining such techniques. The aim of the current research was to analyse some structural and functional features of 3D magnetic scaffolds obtained by the 3D fibre deposition technique and by stereolithography as well as features of multimaterial scaffolds in the form of coaxial and bilayer structures obtained by the proper integration of such methods. The compressive mechanical behaviour of these scaffolds was investigated in a wet environment at 37 °C, and the morphological features were analysed through scanning electron microscopy (SEM) and X-ray micro-computed tomography. The capability of a magnetic scaffold to absorb magnetic nanoparticles (MNPs) in water solution was also assessed. confocal laser scanning microscopy was used to assess the in vitro biological behaviour of human mesenchymal stem cells (hMSCs) seeded on 3D structures. Results showed that a wide range of mechanical properties, covering those spanning hard and soft tissues, can be obtained by 3D FDM and stereolithography techniques. 3D virtual reconstruction and SEM showed the precision with which the scaffolds were fabricated, and a good-quality interface between poly(ε-caprolactone) and poly(ethylene glycol) based scaffolds was observed for bilayer and coaxial scaffolds. Magnetised scaffolds are capable of absorbing water solution of MNPs, and a preliminary information on cell adhesion and spreading of hMSCs was obtained without the application of an external magnetic field.

  8. Application of different techniques to obtain spatial estimates of debris flows erosion and deposition depths

    Science.gov (United States)

    Boreggio, Mauro; Gregoretti, Carlo; Degetto, Massimo; Bernard, Martino

    2016-04-01

    In Alpine regions, debris flows endanger settlements and human life. Danger mitigation strategies based on the preparation of hazard maps are necessary tools for the current land planning. To date, hazard maps are obtained by using one- or two-dimensional numerical models that are able to forecast the potential inundated areas, after careful calibration of those input parameters that directly affect the flow motion and its interaction with the ground surface (sediments entrainment or deposition). In principle, the reliability of these numerical models can be tested by flume experiments in laboratory using, for example, particles and water mixtures. However, for more realistic materials including coarse particles, the scaling effects are still difficult to account for. In some cases, where there are enough data (for example, point measures of flow depths and velocities or spatial estimation of erosion and deposition depths), these models can be tested against field observations. As it regards the spatial estimates of debris flows erosion and deposition depths, different approaches can be followed to obtain them, mainly depending on both the type and accuracy of the available initial data. In this work, we explain the methods that have been employed to obtain the maps of erosion and deposition depths for three occurred debris flows in the Dolomites area (North-Eastern Italian Alps). The three events are those occurred at Rio Lazer (Trento) on the 4th of November 1966, at Fiames (Belluno) on the 5th of July 2006 and at Rio Val Molinara (Trento) on the 15th of August 2010. For each case study, we present the available initial data and the related problems, the techniques that have been used to overcome them and finally the results obtained.

  9. Designed nanostructured pt film for electrocatalytic activities by underpotential deposition combined chemical replacement techniques.

    Science.gov (United States)

    Huang, Minghua; Jin, Yongdong; Jiang, Heqing; Sun, Xuping; Chen, Hongjun; Liu, Baifeng; Wang, Erkang; Dong, Shaojun

    2005-08-18

    Multiple-deposited Pt overlayer modified Pt nanoparticle (MD-Pt overlayer/PtNPs) films were deliberately constructed on glassy carbon electrodes through alternately multiple underpotential deposition (UPD) of Ag followed redox replacement reaction by Pt (II) cations. The linear and regular growth of the films characterized by cyclic voltammetry was observed. Atomic force spectroscopy (AFM) provides the surface morphology of the nanostructured Pt films. Rotating disk electrode (RDE) voltammetry and rotating ring-disk electrode (RRDE) voltammetry demonstrate that the MD-Pt overlayer/PtNPs films can catalyze an almost four-electron reduction of O(2) to H(2)O in air-saturated 0.1 M H(2)SO(4). Thus-prepared Pt films behave as novel nanostructured electrocatalysts for dioxygen reduction and hydrogen evolution reaction (HER) with enhanced electrocatalytic activities, in terms of both reduction peak potential and peak current, when compared to that of the bulk polycrystalline Pt electrode. Additionally, it is noted that after multiple replacement cycles, the electrocatalytic activities improved remarkably, although the increased amount of Pt is very low in comparison to that of pre-modified PtNPs due to the intrinsic feature of the UPD-redox replacement technique. In other words, the electrocatalytic activities could be improved markedly without using very much Pt by the technique of tailoring the catalytic surface. These features may provide an interesting way to produce Pt catalysts with a reliable catalytic performance as well as a reduction in cost.

  10. Lowest surface recombination velocity on n-type crystalline silicon using PECVD a-Si:H/SiNx bi-layer passivation

    Science.gov (United States)

    Stepanov, Dmitri S.; Chowdhury, Zahidur R.; Kherani, Nazir P.

    2011-08-01

    Energy conversion efficiency of crystalline silicon (c-Si) solar cells manufactured on thin substrates is strongly influenced by the recombination losses of photo-generated charge carriers at the surface and in its proximity. Intrinsic hydrogenated amorphous silicon (i-a-Si:H) deposited using DC saddle-field plasma enhanced chemical vapour deposition (PECVD) at a low temperature of ~200°C reduces recombination losses of photo-generated carriers through passivation of defects at the surface. This study reports on high quality surface passivation achieved using a dual layer approach wherein a 70nm amorphous silicon nitride (SiNx) capping layer is deposited on a less than 10nm thin i-a-Si:H layer. While the a-Si:H layer is effective in passivating the interface recombination sites, SiNx is deemed to incorporate field-effect passivation, thus providing a minority carrier mirror. Additionally, SiNx layer acts as an anti-reflection coating with a low absorption coefficient in the optical frequency range of interest. The SiNx deposition conditions, known to strongly influence the passivating quality of the dual layer structure, were systematically investigated using the response surface methodology (RSM). The optimal deposition parameters obtained from the RSM study were experimentally verified to yield the lowest surface recombination velocity of 3.5 cm/s on 1-2 Ω-cm n-type FZ c-Si using a PECVD a-Si:H/SiNx bi-layer passivation stack.

  11. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  12. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  13. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  14. Experimental techniques to determine salt formation and deposition in supercritical water oxidation reactors

    Energy Technology Data Exchange (ETDEWEB)

    Chan, J.P.C.; LaJeunesse, C.A.; Rice, S.F.

    1994-08-01

    Supercritical Water Oxidation (SCWO) is an emerging technology for destroying aqueous organic waste. Feed material, containing organic waste at concentrations typically less than 10 wt % in water, is pressurized and heated to conditions above water`s critical point where the ability of water to dissolve hydrocarbons and other organic chemicals is greatly enhanced. An oxidizer, is then added to the feed. Given adequate residence time and reaction temperature, the SCWO process rapidly produces innocuous combustion products. Organic carbon and nitrogen in the feed emerge as CO{sub 2} and N{sub 2}; metals, heteroatoms, and halides appear in the effluent as inorganic salts and acids. The oxidation of organic material containing heteroatoms, such as sulfur or phosphorous, forms acid anions. In the presence of metal ions, salts are formed and precipitate out of the supercritical fluid. In a tubular configured reactor, these salts agglomerate, adhere to the reactor wall, and eventually interfere by causing a flow restriction in the reactor leading to an increase in pressure. This rapid precipitation is due to an extreme drop in salt solubility that occurs as the feed stream becomes supercritical. To design a system that can accommodate the formation of these salts, it is important to understand the deposition process quantitatively. A phenomenological model is developed in this paper to predict the time that reactor pressure begins to rise as a function of the fluid axial temperature profile and effective solubility curve. The experimental techniques used to generate effective solubility curves for one salt of interest, Na{sub 2}SO{sub 4}, are described, and data is generated for comparison. Good correlation between the model and experiment is shown. An operational technique is also discussed that allows the deposited salt to be redissolved in a single phase and removed from the affected portion of the reactor. This technique is demonstrated experimentally.

  15. Enhanced interfacial adhesion and osteogenesis for rapid "bone-like" biomineralization by PECVD-based silicon oxynitride overlays.

    Science.gov (United States)

    Ilyas, Azhar; Lavrik, Nickolay V; Kim, Harry K W; Aswath, Pranesh B; Varanasi, Venu G

    2015-07-22

    Structurally unstable fracture sites require metal fixative devices, which have long healing times due to their lack of osteoinductivity. Bioactive glass coatings lack in interfacial bonding, delaminate, and have reduced bioactivity due to the high temperatures used for their fabrication. Here, we test the hypothesis that low-temperature PECVD amorphous silica can enhance adhesion to the underlying metal surface and that N incorporation enhances osteogenesis and rapid biomineralization. A model Ti/TiO2-SiOx interface was formed by first depositing Ti onto Si wafers, followed by surface patterning, thermal annealing to form TiO2, and depositing SiOx/Si(ON)x overlays. TEM micrographs showed conformal SiOx layers on Ti/TiO2 overlays while XPS data revealed the formation of an elemental Ti-O-Si interface. Nanoscratch testing verified strong SiOx bonding with the underlying TiO2 layers. In vitro studies showed that the surface properties changed significantly to reveal the formation of hydroxycarbonate apatite within 6 h, and Si(ON)x surface chemistry induced osteogenic gene expression of human periosteal cells and led to a rapid "bone-like" biomineral formation within 4 weeks. XANES data revealed that the incorporation of N increased the surface HA bioactivity by increasing the carbonate to phosphate ratio. In conclusion, silicon oxynitride overlays on bone-implant systems enhance osteogenesis and biomineralization via surface nitrogen incorporation.

  16. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K., E-mail: krmurthin@yahoo.co.in, E-mail: ramamurthi.k@ktr.srmuniv.ac.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur – 603 203, Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625 021, Tamil Nadu (India)

    2016-05-06

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO{sub 3} in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V{sub 2}O{sub 5} and V{sub 4}O{sub 7}. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10{sup −3} lin.{sup −2}m{sup −4} and 1.7263 × 10{sup 14} lin.m{sup −2}. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  17. Using 137Cs Tracer Technique to Evaluate Erosion and Deposition of Black Soil in Northeast China

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Soil and water losses through erosion have been serious in the black soil region of Northeast China. Therefore, a sloping cultivated land in Songnen Plain was selected as a case study to: 1) determine the 137Cs reference inventory in the study area; 2) calculate erosion and deposition rates of black soil on different slope locations; 3) conduct a sensitivity analysis of some model parameters; and 4) compare overall outputs using four different models. Three transects were set in the field with five slope locations for each transect, including summit, shoulder-slope, back-slope, foot-slope, and toe-slope. Field measurements and model simulation were used to estimate a bomb-derived 137Cs reference inventory in the study area.Soil erosion and deposition rates were estimated using four 137Cs models and percentage of 137Cs loss/gain. The 137Cs reference value in the study area was 2 232.8 Bq m-2 with 137Cs showing a clear topographic pattern, decreasing from the summit to shoulder-slope, then increasing again at the foot-slope and reaching a maximum at the toe-slope. Predicted soil redistribution rates for different slope locations varied. Among models, the Yang Model (YANG-M) overestimated erosion loss but underestimated deposition. However, the standard mass balance model (MBM1) gave predictions similar to a mass balance model incorporating soil movement by tillage (MBM2). Sensitivity analysis of the proportion factor γand distribution pattern of 137Cs in the surface layer demonstrated the impact of 137Cs enrichment on calculation of the soil erosion rate. Factors influencing the redistribution of fallout 137Cs in landscape should be fully considered as calculating soil redistribution rate using 137Cs technique.

  18. 用于TFT-LCD生产线的新一代PECVD和PVD系统%New PECVD & PVD System Generation used for TFT LCD Production Line

    Institute of Scientific and Technical Information of China (English)

    Julia Li; Haiyan Sun; Klaus Neubeck; Alexander Marxer; Christine Algate

    2004-01-01

    The biggest a-Si deposited substrate was introduced by Unaxis Displays at Yokohama FPD exhibition held on November, 28-31, 2003. This substrate enables up to eight 40" televisions to be produced on one substrate, thus indicating the new era of large size TFTLCD television is coming.This present paper outlines the innovative solution of PECVD and PVD systems (Generation 6 and 7) used for TFT-LCD production line: -Concept-System configuration-Substrate handling (external and internal)-Process reactors / chamber Finally, the future trend of PECVD & PVD system used for TFT LCD production is discussed.%在2003年11月28~31日于日本YoKohama举办的FPD展览会上展示了最大尺寸的aSi淀积基板,这种基板可满足在一块基板上生产40英寸电视的要求.从而表明大尺寸TFT-LCD 电视的新纪元正在来临.从原理、系统结构、基板传输(外部和内部)、工艺概述了用于TFT-LCD生产线的第6代和第7代PECVD和PVD系统的腔室等方面新技术方案.讨论了用于TFTLCD生产的PECVD和PVD系统的未来趋势.

  19. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    A.D. Verkerk; M.M. de Jong; J.K. Rath; M. Brinza; R.E.I. Schropp; W.J. Goedheer; V.V. Krzhizhanovskaya; Y.E. Gorbachev; K.E. Orlov; E.M. Khilkevitch; A.S. Smirnov

    2008-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by l

  20. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  1. Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

    NARCIS (Netherlands)

    Fiorentino, G.; Syed, W.; Adam, A.; Neto, A.; Sarro, P.M.

    2014-01-01

    The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC de

  2. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng

    2014-10-20

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  3. [An investigation of HAP/organic polymer composite coatings prepared by electrochemical co-deposition technique].

    Science.gov (United States)

    Hu, Haobing; Lin, Changjian; Leng, Yang

    2003-03-01

    An electrochemical co-deposition technique has been developed to prepare a hydroxyapatite (HAP)/organic polymer composite coatings on Ti surface as new biomaterial of hard tissue. The composite coating of organic polymer and calcium phosphate is formed by adding a water soluble polymer of the ethylene series to NH4H2PO4-Ca (NO3)2 solution when conducting an appropriate electrochemical co-deposition experiment. The XRD, SEM, XPS, SIMS and nano indent measurements were performed to characterize the morphology, composition, structure and surface stiffness of the composite coating. It was found that the morphology and surface hardness of the coatings showed a remarkable modification when introducing a minor polymer to HAP coating, and the bonding force between the coating and metal substrate was distinctly increased. The incorporation of minor organic polymer into the HAP compound at molecular level will improve the mechanical properties and morphology of the composite coatings, and this may be helpful to raising its bio-activity.

  4. Kinetics of niobium carbide coating produced on AISI 1040 steel by thermo-reactive deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Ugur

    2004-07-15

    There are a lot of technologically interesting characteristics of niobium carbide coating deposited by pack method which is the production of hard, wear-resistant, oxidation and corrosion resistant coating layer on the steel substrates. In the present study, the growth kinetics of niobium carbide layer deposited by thermo-reactive diffusion techniques in a solid medium on steel samples was reported. Niobium carbide coating treatment was performed on AISI 1040 steels in the powder mixture consisting of ferro-niobium, ammonium chloride and alumina at 1073, 1173 and 1273 K for 1-4 h. The presence of NbC and Nb{sub 2}C phases formed on the surface of the steel substrates was confirmed by optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction analyses. Niobium carbide layer thickness ranges from 3.42{+-}0.52 to 11.78{+-}2.29 {mu}m depending upon the treatment time and temperature. Layer growth kinetics was analyzed by measuring the depth of niobium carbide layer as a function of time and temperature. The kinetics of niobium carbide coating by pack method shows a parabolic relationship between carbide layer thickness and treatment time, and the activation energy for the process is estimated to be 91.257 kJ mol{sup -1}. Moreover, an attempt was made to investigate the possibility of predicting the contour diagram of niobium carbide layer variation and to establish some empirical relationships between process parameters and niobium carbide layer thickness.

  5. Polyethylene-Carbon Nanotube Composite Film Deposited by Cold Spray Technique

    Science.gov (United States)

    Ata, Nobuhisa; Ohtake, Naoto; Akasaka, Hiroki

    2017-08-01

    Carbon nanotubes (CNTs) are high-performance materials because of their superior electrical conductivity, thermal conductivity, and self-lubrication, and they have been studied for application to polymer composite materials as fillers. However, the methods of fabricating polymer composites with CNTs, such as injection molding, are too complicated for industrial applications. We propose a simple cold spray (CS) technique to obtain a polymer composite of polyethylene (PE) and CNTs. The composite films were deposited by CS on polypropylene and nano-porous structured aluminum substrates. The maximum thickness of the composite film was approximately 1 mm. Peaks at G and D bands were observed in the Raman spectra of the films. Scanning electron microscopy images of the film surface revealed that PE particles were melted by the acceleration gas and CNTs were attached with melted PE. The PE particles solidified after contact with the substrate. These results indicate that PE-CNT composite films were successfully deposited on polypropylene and nano-porous structured aluminum substrates by CS.

  6. Carbon nanotubes for supercapacitors: Consideration of cost and chemical vapor deposition techniques

    Institute of Scientific and Technical Information of China (English)

    Chao Zheng; Weizhong Qian; Chaojie Cui; Guanghui Xu; Mengqiang Zhao; Guili Tian; Fei Wei

    2012-01-01

    In this topic,we first discussed the requirement and performance of supercapacitors using carbon nanotubes (CNTs) as the electrode,including specific surface area,purity and cost.Then we reviewed the preparation technique of single walled CNTs (SWNTs) in relatively large scale by chemical vapor deposition method.Its catalysis on the decomposition of methane and other carbon source,the reactor type and the process control strategies were discussed.Special focus was concentrated on how to increase the yield,selectivity,and purity of SWNTs and how to inhibit the formation of impurities,including amorphous carbon,multiwalled CNTs and the carbon encapsulated metal particles,since these impurities seriously influenced the performance of SWNTs in supercapacitors.Wish it be helpful to further decrease its product cost and for the commercial use in supercapacitors.

  7. Depositing nanoparticles on a silicon substrate using a freeze drying technique

    Science.gov (United States)

    Sigehuzi, Tomoo

    2017-08-01

    For the microscopic observation of nanoparticles, an adequate sample preparation is an essential part of this task. Much research has been performed for usable preparation methods that will yield aggregate-free samples. A freeze drying technique, which only requires a -80 °C freezer and a freeze dryer, is shown to provide an on-substrate dispersion of mostly isolated nanoparticles. The particle density could be made sufficiently high for efficient observations using atomic force microscopy. Since this sandwich method is purely physical, it could be applied to deposit various nanoparticles independent of their surface chemical properties. Suspension film thickness, or the dimensionality of the suspension film, was shown to be crucial for the isolation of the particles. Silica nanoparticles were dispersed on a silicon substrate using this method and the sample properties were examined using atomic force microscopy.

  8. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  9. Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique

    Indian Academy of Sciences (India)

    A A ATTA; M M EL-NAHASS; KHALED M ELSABAWY; M M ABD EL-RAHEEM; A M HASSANIEN; A ALHUTHALI; ALI BADAWI; AMAR MERAZGA

    2016-11-01

    Transparent metal oxide thin films of samarium oxide (Sm$_2$O$_3$) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (E$^{d}_{g}$ ) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm$_2$O$_3$ thin films were found to obey the single oscillator model.

  10. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, G. Anil, E-mail: anilhcu@gmail.com; Reddy, M. V. Ramana, E-mail: anilhcu@gmail.com [Department of Physics, Osmania University, Hyderabad-500007 (India); Reddy, Katta Narasimha, E-mail: anilhcu@gmail.com [Department of Physics, Mahatma Gandhi University, Nalgonda-508003 (India)

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  11. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  12. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  13. Synthesis of designed materials by laser-based direct metal deposition technique: Experimental and theoretical approaches

    Science.gov (United States)

    Qi, Huan

    Direct metal deposition (DMD), a laser-cladding based solid freeform fabrication technique, is capable of depositing multiple materials at desired composition which makes this technique a flexible method to fabricate heterogeneous components or functionally-graded structures. The inherently rapid cooling rate associated with the laser cladding process enables extended solid solubility in nonequilibrium phases, offering the possibility of tailoring new materials with advanced properties. This technical advantage opens the area of synthesizing a new class of materials designed by topology optimization method which have performance-based material properties. For better understanding of the fundamental phenomena occurring in multi-material laser cladding with coaxial powder injection, a self-consistent 3-D transient model was developed. Physical phenomena including laser-powder interaction, heat transfer, melting, solidification, mass addition, liquid metal flow, and species transportation were modeled and solved with a controlled-volume finite difference method. Level-set method was used to track the evolution of liquid free surface. The distribution of species concentration in cladding layer was obtained using a nonequilibrium partition coefficient model. Simulation results were compared with experimental observations and found to be reasonably matched. Multi-phase material microstructures which have negative coefficients of thermal expansion were studied for their DMD manufacturability. The pixel-based topology-optimal designs are boundary-smoothed by Bezier functions to facilitate toolpath design. It is found that the inevitable diffusion interface between different material-phases degrades the negative thermal expansion property of the whole microstructure. A new design method is proposed for DMD manufacturing. Experimental approaches include identification of laser beam characteristics during different laser-powder-substrate interaction conditions, an

  14. Regular growth combined with lateral etching in diamond deposited over silicon substrate by using hot filament chemical vapor deposition technique

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2013-05-01

    Hot filament chemical vapor deposition has proved to be an attractive method for growing diamond films with good quality and higher growth rate. Diamond films were produced at deposition parameters under which, it is possible to have regular growth combined with lateral etching (RGCLE). Fracture cross-section SEM images showed that RGCLE initiated over polycrystalline diamond film and proceeded by the growth of consecutive steps in each crystallite, which terminated with square/rectangle shaped facets. All the diamond films exhibit RGCLE but with different type of growth behavior. Present work discusses the cyclic formation of the steps in diamond crystallites and RGCLE modes. RGCLE in diamond film may find important applications where heat absorption and dissipation are key issues.

  15. Heavy Metals and Trace Elements Atmospheric Deposition Studies in Tula Region Using Moss Biomonitors Technique

    CERN Document Server

    Ermakova, E V; Steinnes, E

    2002-01-01

    For the first time the moss biomonitors technique was used in air pollution studies in Tula Region (Central Russia), applying NAA, AAS. Moss samples were collected at 83 sites in accordance with the sampling strategy adopted in European projects on biomonitoring atmospheric deposition. A wide set of trace elements in mosses was determined. The method of epithermal neutron activation at IBR-2 reactor of FLNP JINR has made it possible to identify 33 elements (Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Zn, As, Br, Rb, Sr, Mo, Sb, I, Cs, Ba, La, Ce, Sm, Tb, Yb, Hf, Ta, W, Th, U) in the large-scale concentration range - from 10000 ppm for K to 0,001 ppm for Tb and Ta. Cu, Cd and Pb were determined by the flame AAS in the Norwegian Institute of Science and Technology. Using the graphical technique and principal component analysis allowed to separate plant, crustal and general pollution components in the moss. The obtained data will be used for constructing coloured maps of the distribution of elements over t...

  16. A review of hydroxyapatite-based coating techniques: Sol-gel and electrochemical depositions on biocompatible metals.

    Science.gov (United States)

    Asri, R I M; Harun, W S W; Hassan, M A; Ghani, S A C; Buyong, Z

    2016-04-01

    New promising techniques for depositing biocompatible hydroxyapatite-based coatings on biocompatible metal substrates for biomedical applications have continuously been exploited for more than two decades. Currently, various experimental deposition processes have been employed. In this review, the two most frequently used deposition processes will be discussed: a sol-gel dip coating and an electrochemical deposition. This study deliberates the surface morphologies and chemical composition, mechanical performance and biological responses of sol-gel dip coating as well as the electrochemical deposition for two different sample conditions, with and without coating. The review shows that sol-gel dip coatings and electrochemical deposition were able to obtain the uniform and homogeneous coating thickness and high adherent biocompatible coatings even in complex shapes. It has been accepted that both coating techniques improve bone strength and initial osseointegration rate. The main advantages and limitations of those techniques of hydroxyapatite-based coatings are presented. Furthermore, the most significant challenges and critical issues are also highlighted.

  17. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  18. Amorphous silicon solar cells on natively textured ZnO grown by PECVD

    NARCIS (Netherlands)

    Löffler, J.; Groenen, R.; Linden, J.L.; Sanden, M.C.M. van de; Schropp, R.E.I.

    2001-01-01

    Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to refer

  19. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition.

    Science.gov (United States)

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T; Bargatin, Igor

    2016-04-15

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young's modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young's modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

  20. Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

    2015-12-30

    Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

  1. Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

    Science.gov (United States)

    Shen, Yanjiao; Chen, Jianhui; Yang, Jing; Chen, Bingbing; Chen, Jingwei; Li, Feng; Dai, Xiuhong; Liu, Haixu; Xu, Ying; Mai, Yaohua

    2016-11-01

    The epitaxial-Si (epi-Si) growth on the crystalline Si (c-Si) wafer could be tailored by the working pressure in plasma-enhanced chemical vapor deposition (PECVD). It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon (a-Si:H)/c-Si interface is suppressed at high pressure (hp) and occurs at low pressure (lp). The hp a-Si:H, as a purely amorphous layer, is incorporated in the lp-epi-Si/c-Si interface. We find that: (i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough; (ii) with the increase of the inserted hp layer thickness, lp epi-Si at the interface is suppressed, and the fraction of a-Si:H in the thin films increases and that of c-Si decreases, corresponding to the increasing minority carrier lifetime of the sample. Not only the epitaxial results, but also the quality of the thin films at hp also surpasses that at lp, leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase. Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2015201203) and the International Society for Theoretical Chemical Physics of China (Grant No. 2015DFE62900).

  2. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  4. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Science.gov (United States)

    Khan, M. I.; Bhatti, K. A.; Qindeel, Rabia; Alonizan, Norah; Althobaiti, Hayat Saeed

    In this work, zinc oxide (ZnO) multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD) confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM) showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV-Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications.

  5. Preparation and properties of ZnO thin films deposited by sol-gel technique

    Institute of Scientific and Technical Information of China (English)

    LAN Wei; PENG Xingping; LIU Xueqin; HE Zhiwei; WANG Yinyue

    2007-01-01

    Zinc oxide (ZnO) thin films were deposited on (100) Si substrates by sol-gel technique.Zinc acetate was used as the precursor material.The effect of different anneal-ing atmospheres and annealing temperatures on composition, structural and optical properties of ZnO thin films was inves-tigated by using Fourier transform infrared spectroscopy, X-ray diffraction,atomic force microscopy and photolumi-nescence (PL),respectively.At an annealing temperature of 400℃ in N2 for 2 h,dried gel films were propitious to undergo structural relaxation and grow ZnO grains.ZnO thin film annealed at 400℃ in N2 for 2 h exhibited the optimal structure and PL property,and the grain size and the lattice constants of the film were calculated (41.6 nm,a = 3.253 A and c=5.210A).Moreover,a green emission around 495 nm was observed in the PL spectra owing to the oxygen vacancies located at the surface of ZnO grains.With increas- ing annealing temperature,both the amount of the grown ZnO and the specific surface area of the grains decrease,which jointly weaken the green emission.

  6. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Science.gov (United States)

    Birjega, R.; Vlad, A.; Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M.; Zavoianu, R.; Raditoiu, V.; Corobea, M. C.

    2016-06-01

    We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn2+/Al3+ ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  7. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  8. Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

    Institute of Scientific and Technical Information of China (English)

    Wu Chunbo; Zhou Yuqin; Li Guorong; Liu Fengzhen

    2011-01-01

    Amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si SHJ) were prepared by plasma-enhanced chemical vapor deposition (PECVD).The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heterojunctions was studied.Experimental results indicate that:(1) The instability of plasma in the initial stage will damage the surface ofc-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.(2) The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.

  9. TEM studies of Ge nanocrystal formation in PECVD grown SiO{sub 2}:Ge/SiO{sub 2} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Agan, S [Physics Department, Kirikkale University, 71450 Kirikkale (Turkey); Dana, A [Physics Department, Bilkent University, 06800 Ankara (Turkey); Aydinli, A [Physics Department, Bilkent University, 06800 Ankara (Turkey)

    2006-06-07

    We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 {sup 0}C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 {sup 0}C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 {sup 0}C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO{sub 2} interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

  10. Concentration and depth profiles of elements in Si {sub x}N {sub y}H {sub z}/Si thin films produced by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Murillo, G. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico, DF (Mexico); Andrade, E. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, A.P. 20-364, 01000 Mexico, DF (Mexico)]. E-mail: andrade@fisica.unam.mx; Alonso, J.C. [Instituto de Investigaciones en Materiales, UNAM, Ciudad Universitaria, A.P. 70-360, 04510 Mexico, DF (Mexico); Acosta, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, A.P. 20-364, 01000 Mexico, DF (Mexico); Rocha, M.F. [Escuela Superior de Ingenieria Mecanica y Electrica, IPN, C.P. 07738, Mexico, DF (Mexico); Zavala, E.P. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, A.P. 20-364, 01000 Mexico, DF (Mexico); Policroniades, R. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico, DF (Mexico)

    2006-08-15

    Plasma enhanced chemical vapor deposition (PECVD) with SiH{sub 4}/NH{sub 3} mixtures was used to produce silicon nitride thin films on silicon substrates. These types of films are commonly used as dielectrics in modern semiconductor technology; however, the incorporation of large amounts of hydrogen affects negatively their stability and electrical properties. Therefore, quantifications of the hydrogen content and chemical composition of these films are required. Forward elastic scattering using a 10 MeV {sup 12}C{sup 3+} beam was used to determine the thickness and stoichiometry of the films. Nuclear reaction analysis (NRA) using a 0.825 MeV deuterium beam was also applied to measure the low concentrations of oxygen and carbon in these films. The chemical structure of the silicon nitride layers was studied using infrared spectroscopy.

  11. Yb2Si2O7 Environmental Barrier Coatings Deposited by Various Thermal Spray Techniques: A Preliminary Comparative Study

    Science.gov (United States)

    Bakan, Emine; Marcano, Diana; Zhou, Dapeng; Sohn, Yoo Jung; Mauer, Georg; Vaßen, Robert

    2017-06-01

    Dense, crack-free, uniform, and well-adhered environmental barrier coatings (EBCs) are required to enhance the environmental durability of silicon (Si)-based ceramic matrix composites in high pressure, high gas velocity combustion atmospheres. This paper represents an assessment of different thermal spray techniques for the deposition of Yb2Si2O7 EBCs. The Yb2Si2O7 coatings were deposited by means of atmospheric plasma spraying (APS), high-velocity oxygen fuel spraying (HVOF), suspension plasma spraying (SPS), and very low-pressure plasma spraying (VLPPS) techniques. The initial feedstock, as well as the deposited coatings, were characterized and compared in terms of their phase composition. The as-sprayed amorphous content, microstructure, and porosity of the coatings were further analyzed. Based on this preliminary investigation, the HVOF process stood out from the other techniques as it enabled the production of vertical crack-free coatings with higher crystallinity in comparison with the APS and SPS techniques in atmospheric conditions. Nevertheless, VLPPS was found to be the preferred process for the deposition of Yb2Si2O7 coatings with desired characteristics in a controlled-atmosphere chamber.

  12. Yb2Si2O7 Environmental Barrier Coatings Deposited by Various Thermal Spray Techniques: A Preliminary Comparative Study

    Science.gov (United States)

    Bakan, Emine; Marcano, Diana; Zhou, Dapeng; Sohn, Yoo Jung; Mauer, Georg; Vaßen, Robert

    2017-08-01

    Dense, crack-free, uniform, and well-adhered environmental barrier coatings (EBCs) are required to enhance the environmental durability of silicon (Si)-based ceramic matrix composites in high pressure, high gas velocity combustion atmospheres. This paper represents an assessment of different thermal spray techniques for the deposition of Yb2Si2O7 EBCs. The Yb2Si2O7 coatings were deposited by means of atmospheric plasma spraying (APS), high-velocity oxygen fuel spraying (HVOF), suspension plasma spraying (SPS), and very low-pressure plasma spraying (VLPPS) techniques. The initial feedstock, as well as the deposited coatings, were characterized and compared in terms of their phase composition. The as-sprayed amorphous content, microstructure, and porosity of the coatings were further analyzed. Based on this preliminary investigation, the HVOF process stood out from the other techniques as it enabled the production of vertical crack-free coatings with higher crystallinity in comparison with the APS and SPS techniques in atmospheric conditions. Nevertheless, VLPPS was found to be the preferred process for the deposition of Yb2Si2O7 coatings with desired characteristics in a controlled-atmosphere chamber.

  13. Progress in the development of deposition prevention and cleaning techniques of in-vessel optics in ITER

    Science.gov (United States)

    Mukhin, E.; Vukolov, K.; Semenov, V.; Tolstyakov, S.; Kochergin, M.; Kurskiev, G.; Podushnikova, K.; Razdobarin, A.; Gorodetsky, A.; Zalavutdinov, R.; Bukhovets, V.; Zakharov, A.; Bulovich, S.; Veiko, V.; Shakshno, E.

    2009-08-01

    The lifetime of front optical components unprotected from reactor grade plasmas may be very short due to intensive contamination with carbon and beryllium-based materials eroded by the plasma from beryllium walls and carbon tiles. Deposits result in a significant reduction and spectral alterations of optical transmission. In addition, even rather thin and transparent deposits can dramatically change the shape of reflectance spectra, especially for mirrors with rather low reflectivity, such as W or Mo. The distortion of data obtained with various optical diagnostics may affect the safe operation of ITER. Therefore, the development of optics-cleaning and deposition-mitigating techniques is a key factor in the construction and operation of optical diagnostics in ITER. The problem is of particular concern for optical elements positioned in the divertor region. The latest achievements in protection of in-vessel optics are presented using the example of deposition prevention/cleaning techniques for in-machine components of the Thomson scattering system in the divertor. Careful consideration of well-known and novel protection approaches shows that neither of them alone provides guaranteed survivability of the first in-vessel optics in the divertor. Only a set of complementary prevention/cleaning techniques, which include special materials for mirrors and inhibition additives for plasma, is able to manage the challenging task. The essential issue, which needs to be addressed in the immediate future, is an extensive development of techniques tested under experimental conditions (exposure time and contamination fluxes) similar to those expected in ITER.

  14. Application Study of PECVD Design Based on Improving DFMEA%基于改进设计故障模式集成的PECVD优化设计

    Institute of Scientific and Technical Information of China (English)

    吴晓松; 褚学宁; 程辉

    2013-01-01

    DFMEA is an important method of reliability assurance and preventive quality,which investigates and assesses all possible failure modes of a system during the earliest development phases.However,product design is a process of meeting multi-constraints which isn't considered by the existing DFMEA.So,a model of Priority-ideal matrix and DFMEA integration is proposed for the severity assessment of FMEA,by which the feature,cost,time and potential are considered in order to eliminate the shortcomings of the existing DFMEA.The design process and template of the proposed method is developed for PECVD (Plasma Enhenced Chemical Vapor Deposition) design,which is finally illustrated to prove the feasibility of the proposed method.%设计故障模式及后果分析(DFMEA)能够在设计阶段充分考虑故障模式对产品功能的影响,从而提高产品设计的可靠度与安全性.但现有DFMEA的研究和应用缺少对多重条件约束的考量.基于此提出了优先理想矩阵与DFMEA集成的模型,将性能、成本、时间及其改进的余地运用到FMEA的严重性评价中.并且将此方法应用到等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)的设计中,提出了PECVD优化设计的流程和DFMEA计算模板.结果表明,此方法能够有效的进行PECVD故障原因与影响分析,及其系统优化设计.

  15. Cathode encapsulation of OLEDs by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks

    NARCIS (Netherlands)

    Keuning, W.; Van de Weijer, P.; Lifka, H.; Kessels, W.M.M.; Creatore, M.

    2011-01-01

    Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition(ALD) at room temperature (25 ºC) have been tested as water vapor per-meation barriers for OLED devices. Silicon nitride films (a-SiNx:H)deposited by plasma-enhanced chemical vapor deposition (PE-CVD) servedas reference and were

  16. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: pkuhjf@bit.edu.cn [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Jaegermann, Wolfram [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Besland, M.P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2015-05-01

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface.

  17. Parametric investigation of substrate temperatures on the properties of Zinc oxide deposited over a flexible polymeric substrate via spray technique

    Science.gov (United States)

    Rajagopalan, P.; Gagrani, Rohit; Nakamura, Daisuke; Okada, Tatsuo; Singh, Vipul; Palani, I. A.

    2016-09-01

    Here we report the influence of substrate temperature (300-500 °C) on the deposition and growth of ZnO over a Flexible polyimide film. Owing to its simplicity, large area deposition capability and Cost effectivity Spray Pyrolysis technique was used. We have modified the conventional process of Spray pyrolysis by spraying for shorter durations and repeating the process which in turn reduced the Island formation of ZnO. Moreover, this technique helped in maintaining the constant temperature and uniformity during the deposition as prolonged spraying reduces the temperature of the heating plate drastically. Photoluminescence (PL) reveals that at 350 and 400° C the defect have reduced. XRD reveals the crystallinity and Impurities present. FE-SEM reveals the structure morphology changes with the change in the substrate temperature. TGA was done to ensure that substrate does not undergoes dissociation at high temperature. It was observed at the film deposited at 400 °C was found to be more uniform, defect free and crystalline. Hence, IV characterization of the film deposited at 400 °C was done which showed good rectification behaviour of the Schottky diodes.

  18. A lidar technique to quantify surface deposition from atmospheric releases of bulk liquids

    Science.gov (United States)

    Post, Madison J.; Glaes, Thomas; Matta, Joseph; Sommerville, Douglas; Einfeld, Wayne

    We show that a scanning, pulsed lidar can be used to quantify the time history and areal concentration of mass deposited on the ground from an elevated release of bulk liquid. Aircraft measurements, witness car depositions and evaporative modelling crudely support results from analysed lidar data.

  19. Fabrication and Properties of Organic-Inorganic Nanolaminates Using Molecular and Atomic Layer Deposition Techniques

    Science.gov (United States)

    2012-02-01

    55, 1030-1039 (2009).* 2. B.B. Burton, D.N. Goldstein and S.M. George, "Atomic Layer Deposition of MgO Using Bis(ethylcyclopentadienyl) magnesium ...Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide , J. Phys. Chem. C 114, 17597-17603 (2010).* 28. L.A. Riley, A.S

  20. Changes in chemical composition and nanostructure of SiC thin films prepared by PECVD during thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kuenle, Matthias; Janz, Stefan [Fraunhofer Institute of Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Nickel, Klaus Georg [Applied Mineralogy, Institute for Geosciences, Eberhard-Karl-University Tuebingen, Wilhelmstr. 52, 72074 Tuebingen (Germany); Eibl, Oliver [Institute for Applied Physics, Eberhard-Karls-University Tuebingen, Auf der Morgenstelle 10, 72074 Tuebingen (Germany)

    2011-08-15

    Silicon carbide (SiC) thin films were deposited on silicon (Si) using plasma enhanced chemical vapor deposition (PECVD). Annealing was done in a rapid thermal annealing furnace at a temperature of 1300 C. As-deposited and annealed Si-rich and stoichiometric SiC thin films were investigated by analytical transmission electron microscopy (AEM). TEM-energy-dispersive X-ray spectroscopy was used to quantify the chemical composition of the SiC thin films with high accuracy. The chemical composition of the near stoichiometric SiC thin film changed during annealing from Si{sub 0.4}C{sub 0.6} to Si{sub 0.5}C{sub 0.5} due to diffusion of Si from the Si substrate into the film. The Si-rich Si{sub 1-x}C{sub x} film had the identical chemical composition of Si{sub 0.8}C{sub 0.2} before and after annealing. As-deposited films show nanoporosity within the bulk film. During annealing, v-shaped defect structures were formed at the interface of the stoichiometric SiC thin film to the Si substrate. Diffraction patterns revealed that as-deposited films were amorphous. During annealing the crystallization of 3C-SiC occurred in near-stoichiometric SiC thin films, whereas in Si-rich Si{sub 1-x}C{sub x} thin films two phases, namely Si and 3C-SiC, crystallized. Low-loss and core-loss electron energy loss spectroscopy (EELS) verified the diffraction results. In the low-loss spectra of the near stoichiometric SiC thin film, a plasmon peak located at 20.2 eV before and at 22.3 eV after annealing was detected. The low-loss spectra of the Si-rich Si{sub 1-x}C{sub x} thin film showed an asymmetric plasmon peak with two maxima located at 18.5 and 25.0 eV in the as-deposited film and 18.6 and 24.3 eV in the annealed Si-rich Si{sub 1-x}C{sub x} film. The 18.5 eV plasmon peaks is assigned to Si and the 25 eV plasmon peak is attributed to the SiC phase. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    National Research Council Canada - National Science Library

    Abdulraheem, Yaser; Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef

    2014-01-01

    ...) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap...

  2. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  3. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    Science.gov (United States)

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

    2017-01-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

  4. Thermal stability and thermal expansion behaviour of ZrO{sub 2}/Y{sub 2}O{sub 3} multilayers deposited by pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Maneesha, E-mail: pkigcar@gmail.com [Materials Synthesis and Structural Characterisation Division, Physical Metallurgy Group, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Kuppusami, P. [Centre for Nanoscience and Nanotechnology, Sathyabama University, Chennai, 600119 Tamil Nadu (India); Murugesan, S.; Ghosh, Chanchal; Divakar, R.; Singh, Akash; Mohandas, E. [Materials Synthesis and Structural Characterisation Division, Physical Metallurgy Group, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)

    2015-07-15

    Multilayers of ZrO{sub 2}/Y{sub 2}O{sub 3} were prepared by pulsed laser deposition technique with variation in the ZrO{sub 2} layer thickness from 5 to 30 nm keeping the Y{sub 2}O{sub 3} layer thickness constant (∼10 nm). The stability, phase evolution and thermal expansion behaviour of the multilayers were analyzed by high temperature x-ray diffraction technique, in the temperature range of 300–1373 K. Unlike the single layer of ZrO{sub 2} film, which shows a mixture of tetragonal and monoclinic phase, the ZrO{sub 2} layers in multilayers show tetragonal phase in case of all the multilayers investigated in the present work. The values of coefficient of thermal expansion (CTE) decrease with increase in the ZrO{sub 2} layer thickness. The CTE of both ZrO{sub 2} and Y{sub 2}O{sub 3} are found to be influenced by their mutual solubility as well as due to interdiffusion of these oxides taking place along the interfaces of the multilayers, especially during high temperature heat-treatment. - Highlights: • ZrO{sub 2}/Y{sub 2}O{sub 3} multilayers were deposited by pulsed laser deposition technique. • Formation of tetragonal phase of ZrO{sub 2} and cubic phase of Y{sub 2}O{sub 3} were observed. • The multilayers films show good thermal stability upto temperature 1373 K. • The coefficient of thermal expansion (CTE) of t-ZrO{sub 2} decreases with increase in ZrO{sub 2} layer thickness.

  5. Hg1-xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique

    Science.gov (United States)

    Rubio, Sandra; Sochinskii, Nikolai V.; Repiso, Eva; Tsybrii, Zinoviia; Sizov, Fiodor; Plaza, Jose Luis; Diéguez, Ernesto

    2017-01-01

    Closed Space Sublimation (CSS) technique has been studied to deposit Hg1-xCdxTe polycrystalline films on CdZnTe substrates at the improved pressure-temperature conditions. The experimental results on film characterization suggest that the CSS optimal conditions are the argon atmospheric pressure (1013 mbar) and the deposition temperature in the range of 500-550 °C. These conditions provide macro-defect free Hg1-xCdxTe films with the uniform size and surface distribution of polycrystals.

  6. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    OpenAIRE

    Pinheiro,Wagner Anacleto; Falcão, Vivienne Denise; Cruz,Leila Rosa de Oliveira; Ferreira,Carlos Luiz

    2006-01-01

    Unlike other thin film deposition techniques, close spaced sublimation (CSS) requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate) and a sintered C...

  7. Influence of solution deposition rate on properties of V{sub 2}O{sub 5} thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Abd–Alghafour, N. M., E-mail: na2013bil@gmail.com [Iraqi Ministry of Education, Anbar (Iraq); Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia,11800 Penang (Malaysia)

    2016-07-19

    Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  8. Effect of Annealing Temperature on the Optical Spectra of CdS Thin Films Deposited at Low Solution Concentrations by Chemical Bath Deposition (CBD Technique

    Directory of Open Access Journals (Sweden)

    Zahid Rizwan

    2011-02-01

    Full Text Available Two different concentrations of CdCl2 and (NH22CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD technique. CdCl2 (0.000312 M and 0.000625 M was employed as a source of Cd2+ while (NH22CS (0.00125 M and 0.000625 M for S2− at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl2 (0.000312 M. Optical energy band gap (Eg, Urbach energy (Eu and absorption coefficient (α have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97% was obtained for the air-annealed films at higher temperature at CdCl2 (0.000312 M.

  9. Atmospheric deposition of particles at a sensitive alpine lake: Size-segregated daily and annual fluxes from passive sampling techniques.

    Science.gov (United States)

    Tai, Anna Y-C; Chen, L-W Antony; Wang, Xiaoliang; Chow, Judith C; Watson, John G

    2017-02-01

    Lake Tahoe, a North American alpine lake long appreciated for its clear water and geographic setting, has experienced a trend of declining water clarity due to increasing nutrient and particle inputs. Contributions from atmospheric deposition of particulate matter (PM) could be important, yet they are inadequately quantified. This study established a yearlong deposition monitoring network in the northern Lake Tahoe Basin. Dry deposition was quantified on surrogate surfaces while wet deposition was based on particles suspended in precipitation at 24-hour resolution. The particle size ranges by these passive techniques were 1-64μm and 0.5-20μm in diameter for dry and wet deposition, respectively. Dry deposition of submicrometer (0.5-1μm) particles was also estimated by extrapolation of a lognormal size distribution. Higher daily number deposition fluxes (NDFdry and NDFwet) were found at a near-shore site, confirming substantial impacts of commercial and tourist activities. The two more isolated sites indicated a uniform regional background. On average, daily NDFdry is about one order of magnitude lower than daily NDFwet. Dry deposition velocities increased rapidly with particle size, as evidenced by collocated measurements of NDFdry and ambient particle number concentrations, though it seems less so for wet deposition due to different scavenging mechanisms. Despite fewer "wet" days than "dry" days during the monitoring period, wet processes dominated seasonal particle deposition, particularly in winter and spring when most precipitation occurred. Adopting sediment (insoluble, inorganic) particle fraction estimates from the literature, this study reports an annual particle flux of 2.9-5.2×10(10)#m(-2)yr(-1) for sediment particles with 1-20μm diameter and 6.1-11×10(10)#m(-2)yr(-1) for those with 0.5-20μm diameter. Implications of these findings to the current knowledge of atmospheric deposition in the Lake Tahoe Total Maximum Daily Load (TMDL) are discussed

  10. Evaluation of Co-rich manganese deposits by image analysis and photogrammetric techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Yamazaki, T.; Sharma, R.; Tsurusaki, K.

    Stereo-seabed photographs of Co-rich manganese deposits on a mid-Pacific seamount, were analysed using an image analysis software for coverage estimation and size classification of nodules, and a photogrammetric software for calculation of height...

  11. Investigation of physical vapor deposition techniques of conformal shell coating for core/shell structures by Monte Carlo simulations

    Energy Technology Data Exchange (ETDEWEB)

    Cansizoglu, H., E-mail: hxis@ualr.edu; Yurukcu, M.; Cansizoglu, M.F.; Karabacak, T.

    2015-05-29

    Vertically aligned core/shell nanowire (nanorod) arrays are favorable candidates in many nano-scale devices such as solar cells, detectors, and integrated circuits. The quality of the shell coating around nanowire arrays is as crucial as the quality of the nanowires in device applications. For this reason, we worked on different physical vapor deposition (PVD) techniques and conducted Monte Carlo simulations to estimate the best deposition technique for a conformal shell coating. Our results show that a small angle (≤ 45°) between incoming flux of particles and the substrate surface normal is necessary for PVD techniques with a directional incoming flux (e.g. thermal or e-beam evaporation) for a reasonable conformal coating. On the other hand, PVD techniques with an angular flux distribution (e.g. sputtering) can provide a fairly conformal shell coating around nanowire arrays without a need of small angle deposition. We also studied the shape effect of the arrays on the conformality of the coating and discovered that arrays of the tapered-top nanorods and the pyramids can be coated with a more conformal and thicker coating compared to the coating on the arrays of flat-top nanowires due to their larger openings in between structures. Our results indicate that conventional PVD techniques, which offer low cost and large scale thin film fabrication, can be utilized for highly conformal and uniform shell coating formation in core/shell nanowire device applications. - Highlights: • We examined the shell coating growth in core/shell nanostructures. • We investigated the effect of physical vapor deposition method on the conformality of the shell. • We used Monte Carlo simulations to simulate the shell growth on nanowire templates. • Angular atomic flux (i.e., sputtering at high pressure) leads to conformal and uniform coatings. • A small angle (< 45°) to the directional flux needs to be introduced for conformal coatings.

  12. Antibacterial efficacy of advanced silver-amorphous carbon coatings deposited using the pulsed dual cathodic arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Endrino, J L; Anders, A; Albella, J M; Horton, J A; Horton, T H; Ayyalasomayajula, P R; Allen, M, E-mail: jlendrino@icmm.csic.es

    2010-11-01

    Amorphous carbon (a-C) also referred as diamond-like carbon (DLC) films are well known to be a biocompatible material with good chemical in ertness; this makes it a strong candidate to be used as a matrix that embeds metallic elements with an antimicrobial effect. We have deposited as et of a-C:Ag films using a dual-cathode pulsed filtered cathodic arc source, the arc pulse frequency of the silver and graphite cathodes was controlled in order to obtain samples with various silver contents. In this study, we show the deposition of silver and carbon ions using this technique and analyze the advantages of incorporating silver into a-C by studying the antimicrobial properties against staphylococcus of samples deposited on Ti{sub 6}Al{sub 4}V coupons and evaluated using 24-well tissue culture plates.

  13. Atmospheric Deposition of Trace Elements Around Ulan-Bator City Studied by Moss and Lichen Biomonitoring Technique and INAA

    CERN Document Server

    Ganbold, G; Gundorina, S F; Frontasyeva, M V; Ostrovnaya, T M; Pavlov, S S; Tsendeekhuu, T

    2005-01-01

    For the first time the moss and lichen biomonitoring technique has been applied to air pollution in Mongolia (Ulan-Bator, the capital city). INAA at the IBR-2 reactor has made it possible to determine the content of 35 elements in moss and lichen biomonitors. Samples collected at sites located 10-15 km from the center of Ulan-Bator were analyzed by Instrumental Neutron Activation Analysis (INAA) using epithermal neutrons. The mosses (\\textit{Rhytidium rugosum}, \\textit{Thuidium abietinum}, \\textit{Entodon concinnus}) and lichens (\\textit{Cladonia stellaris}, \\textit{Parmelia separata}) were used to study the atmospheric deposition of trace elements. It was shown that the suggested types of mosses could be used as suitable biomonitors to estimate the concentration levels of heavy metals and trace elements in Ulan-Bator atmospheric deposition. The results are compared to the data of atmospheric deposition of some European countries.

  14. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  15. Effect of technique parameters on characteristics of hydrogen-free DLC films deposited by surface wave-sustained plasma

    Science.gov (United States)

    Xu, Junqi; Kousaka, Hiroyuki; Umehara, Noritsugu; Diao, Dongfeng

    2006-01-01

    Hydrogen-free diamond-like carbon (DLC) films were deposited by a new-type surface wave-sustained plasma physical vapor deposition (SWP-PVD) system under various technique conditions. Electron density was measured by a Langmuir probe, while the film thickness and hardness were characterized using a surface profilometer and a nanoindenter, respectively. Surface morphology was investigated by an atomic force microscope (AFM). It was found that the electron density and deposition rate increased following the increase in microwave power, target voltage, or gas pressure. The typical electron density and deposition rate were about 1.87-2.04×10 11 cm -3 and 1.61-14.32 nm/min respectively. AFM images indicated that the grains of films changes as the technique parameters vary. The optical constants, refractive index n and extinction coefficient k, were obtained using an optical ellipsometry. With the increase in microwave power from 150 to 270 W, the extinction coefficient of DLC films increased from 0.05 to 0.27 while the refractive index decreased from 2.31 to 2.18.

  16. Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yanguas-Gil, A [Instituto de Ciencia de Materiales de Sevilla, CSIC - Universidad de Sevilla, Av. Americo Vespucio 49, 41092 Sevilla (Spain); Cotrino, J [Instituto de Ciencia de Materiales de Sevilla, CSIC - Universidad de Sevilla, Av. Americo Vespucio 49, 41092 Sevilla (Spain); Gonzalez-Elipe, A R [Instituto de Ciencia de Materiales de Sevilla, CSIC - Universidad de Sevilla, Av. Americo Vespucio 49, 41092 Sevilla (Spain)

    2007-06-07

    A global model for electronegative plasmas in a pressure range of 0.1-100 Pa is used to investigate the dissociation of the precursor in O{sub 2}/SiCl(CH{sub 3}){sub 3} discharges. Microwave power is fed to the plasma by an annular waveguide ring with slotted line radiators on the inner side (SLAN) that is operated at 2.45 GHz. The modelling of the ECR plasma discharge and its application to the plasma enhanced chemical vapour deposition (PECVD) of silicon oxide films are reported. In the case of an oxygen discharge, theoretical values of the main plasma parameters (electron density and temperature and atomic oxygen population) are presented as a function of both pressure and electromagnetic power. The model results are compared with the experimental results obtained by optical emission spectroscopy, obtaining reasonably good agreement. The application of the model to the study of the PECVD of SiO{sub 2} film from O{sub 2}/SiCl(CH{sub 3}){sub 3} mixtures has enabled us to determine that the fragmentation of the SiCl(CH{sub 3}){sub 3} molecule takes place mainly by electron impact dissociation, while the growth rate seems to be controlled by oxidation processes. Finally the influence of the precursor in the discharge has been studied. According to the model, in a first order approximation the insertion of the precursor causes an increase in the electron density due to the lower ionization threshold of the SiCl(CH{sub 3}){sub 3} molecule.

  17. Assessment of multiple geophysical techniques for the characterization of municipal waste deposit sites

    Science.gov (United States)

    Gaël, Dumont; Tanguy, Robert; Nicolas, Marck; Frédéric, Nguyen

    2017-10-01

    In this study, we tested the ability of geophysical methods to characterize a large technical landfill installed in a former sand quarry. The geophysical surveys specifically aimed at delimitating the deposit site horizontal extension, at estimating its thickness and at characterizing the waste material composition (the moisture content in the present case). The site delimitation was conducted with electromagnetic (in-phase and out-of-phase) and magnetic (vertical gradient and total field) methods that clearly showed the transition between the waste deposit and the host formation. Regarding waste deposit thickness evaluation, electrical resistivity tomography appeared inefficient on this particularly thick deposit site. Thus, we propose a combination of horizontal to vertical noise spectral ratio (HVNSR) and multichannel analysis of the surface waves (MASW), which successfully determined the approximate waste deposit thickness in our test landfill. However, ERT appeared to be an appropriate tool to characterize the moisture content of the waste, which is of prior information for the organic waste biodegradation process. The global multi-scale and multi-method geophysical survey offers precious information for site rehabilitation studies, water content mitigation processes for enhanced biodegradation or landfill mining operation planning.

  18. Elemental analysis of limestone samples from Obajana and Mfamosing limestone deposits, Nigeria, using nuclear techniques

    Energy Technology Data Exchange (ETDEWEB)

    Akpan, I.O. [Department of Physics, University of Calabar, Calabar, Cross River State (Nigeria); Amodu, A.E. [Science Laboratory Technology Department, Federal Polytechnic, Idah, Kogi State (Nigeria); Akpan, A.E., E-mail: anthonyakpan@yahoo.com [Department of Physics, University of Calabar, Calabar, Cross River State (Nigeria)

    2011-10-15

    Six limestone samples were picked from three different points at the Obajana and Mfamosing limestone deposits. The limestone samples were subjected to elemental analysis by Proton-Induced X-Ray Emission (PIXE) analysis. The samples were irradiated by a 4 mm diameter beam of protons with energy of 2.5 MeV and beam current of 0.2 nA for 0.9 ms. The analysis was carried out with the 1.7 MV Tandem accelerator at the Centre for Energy Research and Development (CERD), Ile-Ife, Osun State, Nigeria. The NIST geology standard NIST 278 was analysed for quality assurance. The elemental composition and concentration of 14 elements were determined in the two locations. Ten elements were found at the Obajana deposit while 13 elements were found at the Mfamosing deposits. The elements: Mg, Al, Ca and Mn do not differ much at both deposits while others differ. The major elements (Ca, Fe, Al, Si and K) present in the limestones were also found in airborne particulate matter studied by earlier researchers. These observations suggest that all particulate emissions and wastes from the Limestone deposit should be closely monitored to reduce their cumulative effects on both health and the environment

  19. Elemental analysis of limestone samples from Obajana and Mfamosing limestone deposits, Nigeria, using nuclear techniques.

    Science.gov (United States)

    Akpan, I O; Amodu, A E; Akpan, A E

    2011-10-01

    Six limestone samples were picked from three different points at the Obajana and Mfamosing limestone deposits. The limestone samples were subjected to elemental analysis by Proton-Induced X-Ray Emission (PIXE) analysis. The samples were irradiated by a 4mm diameter beam of protons with energy of 2.5 MeV and beam current of 0.2nA for 0.9 ms. The analysis was carried out with the 1.7MV Tandem accelerator at the Centre for Energy Research and Development (CERD), Ile-Ife, Osun State, Nigeria. The NIST geology standard NIST 278 was analysed for quality assurance. The elemental composition and concentration of 14 elements were determined in the two locations. Ten elements were found at the Obajana deposit while 13 elements were found at the Mfamosing deposits. The elements: Mg, Al, Ca and Mn do not differ much at both deposits while others differ. The major elements (Ca, Fe, Al, Si and K) present in the limestones were also found in airborne particulate matter studied by earlier researchers. These observations suggest that all particulate emissions and wastes from the Limestone deposit should be closely monitored to reduce their cumulative effects on both health and the environment.

  20. Structural and electrical characterizations of BiFeO{sub 3} capacitors deposited by sol–gel dip coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Cetinkaya, Ali Osman, E-mail: cetinkayaaliosman@gmail.com [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey); Kaya, Senol; Aktag, Aliekber [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey); Budak, Erhan [Chemistry Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Yilmaz, Ercan [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey)

    2015-09-01

    Bismuth ferrite (BiFeO{sub 3}) thin films were deposited by sol–gel dip coating (SGDC) technique on Si-P(100) and glass substrates to investigate the structural and electrical characteristics. The aluminum (Al) metal contacts were formed on the samples deposited on the Si-P(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. The fabricated MOS structures were characterized electrically by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The structural characterizations were performed by X-ray diffraction technique and scanning electron microscopy. The compositions of the films were investigated by energy-dispersive X-ray spectroscopy. The results exhibit that pure rhombohedral perovskite phase films were fabricated without any elemental contamination. Average grain sizes of the BiFeO{sub 3} deposited on silicon and glass wafers were found to be about 34,50 and 30,00 nm, respectively. In addition, while the thin films deposited on glass substrate exhibit porous surface, those deposited on Si-P(100) wafers exhibit dense microstructure with a homogenous surface. Moreover, the C–V and G/ω–V characteristics are sensitive to applied voltage frequency due to frequency dependent charges (N{sub ss}) and series resistance (R{sub s}). The peak values of R{sub s} have been decreased from 2,6 kΩ to 40 Ω, while N{sub ss} is varied from 6,57 × 10{sup 12} to 3,68 × 10{sup 12} eV{sup −1} cm{sup −2} with increasing in frequency. Consequently, pure phase polycrystalline BiFeO{sub 3} thin films were fabricated successfully by SGDC technique and BiFeO{sub 3} dielectric layer exhibits stable insulation characteristics. - Highlights: • Bismuth ferrite thin films were deposited onto silicon and glass substrates by sol–gel. • Structural and electrical properties of fabricated films have been investigated. • Pure rhombohedral perovskite phase films without any contamination were deposited. • Series resistance and interface

  1. Research Update: Large-area deposition, coating, printing, and processing techniques for the upscaling of perovskite solar cell technology

    Science.gov (United States)

    Razza, Stefano; Castro-Hermosa, Sergio; Di Carlo, Aldo; Brown, Thomas M.

    2016-09-01

    To bring perovskite solar cells to the industrial world, performance must be maintained at the photovoltaic module scale. Here we present large-area manufacturing and processing options applicable to large-area cells and modules. Printing and coating techniques, such as blade coating, slot-die coating, spray coating, screen printing, inkjet printing, and gravure printing (as alternatives to spin coating), as well as vacuum or vapor based deposition and laser patterning techniques are being developed for an effective scale-up of the technology. The latter also enables the manufacture of solar modules on flexible substrates, an option beneficial for many applications and for roll-to-roll production.

  2. Synthesis of dense nano cobalt-hydroxyapatite by modified electroless deposition technique

    Science.gov (United States)

    Mohd Zaheruddin, K.; Rahmat, A.; Shamsul, J. B.; Mohd Nazree, B. D.; Aimi Noorliyana, H.

    2016-07-01

    Cobalt-hydroxyapatite (Co-HA) composites was successfully prepared by simple electroless deposition process of Co on the surface of hydroxyapatite (HA) particles. Co deposition was carried out in an alkaline bath with sodium hypophosphite as a reducing agent. The electroless process was carried out without sensitization and activation steps. The deposition of Co onto HA was characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The Co-HA composite powder was compacted and sintered at 1250°C. The Co particles were homogeneously dispersed in the HA matrix after sintering and the mechanical properties of composites was enhanced to 100 % with 3 % wt Co and gradually decreased at higher Co content.

  3. Deposition of gold nanoparticles on silica spheres by electroless metal plating technique.

    Science.gov (United States)

    Kobayashi, Yoshio; Tadaki, Yohei; Nagao, Daisuke; Konno, Mikio

    2005-03-15

    A previously proposed method for metal deposition with silver [Kobayashi et al., Chem. Mater. 13 (2001) 1630] was extended to uniform deposition of gold nanoparticles on submicrometer-sized silica spheres. The present method consisted of three steps: (1) the adsorption of Sn(2+) ions took place on surface of silica particles, (2) Ag(+) ions added were reduced and simultaneously adsorbed to the surface, while Sn(2+) was oxidized to Sn(4+), and (3) Au(+) ions added were reduced and deposited on the Ag surface. TEM observation, X-ray diffractometry, and UV-vis absorption spectroscopy revealed that gold metal nanoparticles with an average particle size of 13 nm and a crystal size of 5.1 nm were formed on the silica spheres with a size of 273 nm at an Au concentration of 0.77 M.

  4. Synthesis of dense nano cobalt-hydroxyapatite by modified electroless deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohd Zaheruddin, K., E-mail: zaheruddin@unimap.edu.my; Rahmat, A., E-mail: azmirahmat@unimap.edu.my; Shamsul, J. B., E-mail: sbaharin@unimap.edu.my; Mohd Nazree, B. D., E-mail: nazree@unimap.edu.my; Aimi Noorliyana, H., E-mail: aimiliyana@unimap.edu.my [School of Materials Engineering, Universiti Malaysia Perlis, Kompleks Pusat Pengajian Jejawi Universiti Malaysia Perlis, Taman Muhibbah, Jejawi 02600 Arau Perlis (Malaysia)

    2016-07-19

    Cobalt-hydroxyapatite (Co-HA) composites was successfully prepared by simple electroless deposition process of Co on the surface of hydroxyapatite (HA) particles. Co deposition was carried out in an alkaline bath with sodium hypophosphite as a reducing agent. The electroless process was carried out without sensitization and activation steps. The deposition of Co onto HA was characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The Co-HA composite powder was compacted and sintered at 1250°C. The Co particles were homogeneously dispersed in the HA matrix after sintering and the mechanical properties of composites was enhanced to 100 % with 3 % wt Co and gradually decreased at higher Co content.

  5. Development of ITER relevant laser techniques for deposited layer characterisation and tritium inventory

    Energy Technology Data Exchange (ETDEWEB)

    Malaquias, A., E-mail: artur.malaquias@jet.efda.org [Associação EURATOM/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001, Lisboa (Portugal); EFDA-CSU, Culham Science Centre, Abingdon OX14 3DB (United Kingdom); Philipps, V.; Huber, A. [Institute for Energy Research – Plasma Physics, Forschungszentrum Jülich GmbH, Association EURATOM-FZJ (Germany); Hakola, A.; Likonen, J. [VTT, Association EURATOM-TEKES, P.O. Box 1000, 02044 VTT (Finland); Kolehmainen, J.; Tervakangas, S. [DIARC-Technology Inc., Kattilalaaksontie 1, 02330 Espoo (Finland); Aints, M.; Paris, P.; Laan, M.; Lissovski, A. [Institute of Physics, University of Tartu, Association EURATOM-TEKES, Tahe 4, Tartu 51010 (Estonia); Almaviva, S.; Caneve, L.; Colao, F. [ENEA, UTAPRAD-DIM, C.R. Frascati, P.O. Box 65, 00044 Frascati, Roma (Italy); Maddaluno, G. [Associazione EURATOM-ENEA sulla Fusione, C. R. Frascati, P.O. Box 65, 00044 Frascati, Roma (Italy); Kubkowska, M.; Gasior, P. [Institute of Plasma Physics and Laser Microfusion, Association EURATOM/IPPLM, 00-908 Warsaw, P.O. Box 49, Hery St. 23 (Poland); Meiden, H.J. van der; Lof, A.R.; Zeijlmans van Emmichoven, P.A. [FOM Institute for Plasma Physics Rijnhuizen, Association EURATOM-FOM, Trilateral Euregio Cluster, P.O. Box 1207, 3430 BE Nieuwegein (Netherlands); and others

    2013-07-15

    Laser Induced Breakdown Spectroscopy (LIBS) is a potential candidate to monitor the layer composition and fuel retention during and after plasma shots on specific locations of the main chamber and divertor of ITER. This method is being investigated in a cooperative research programme on plasma devices such as TEXTOR, FTU, MAGNUM-PSI and in other various laboratorial experiments. In this paper LIBS results from targets of D–H-rich carbon films and mixed W–Al–C deposits on bulk tungsten substrates are reported (simulating ITER-like deposits with Al as proxy for Be). Two independent methods, one to determine the relative elemental composition and the other the absolute contents of the target based on the experimental LIBS signals are proposed. The results show that LIBS has the capability to provide the relative concentrations of the elements on the deposited layer when the experimental conditions on the targets surface are identical to the calibration samples.

  6. Deposition of TiN Films by Novel Filter Cathodic Arc Technique

    Institute of Scientific and Technical Information of China (English)

    NIU Er-Wu; FAN Song-Hua; LI Li; L(U) Guo-Hua; FENG Wen-Ran; ZHANG Gu-Ling; YANG Si-Ze

    2006-01-01

    A straight magnetic filtering arc source is used to deposit thin films of titanium nitride.The properties of thefilms depend strongly on the deposition process.TiN films can be deposited directly onto heated substrates in anitrogen atmosphere or onto unbiased substrates by condensing the Ti+ ion beam in about 300 eV N2+ nitrogen ionbombardment.In the latter case.the film stoichiometry is varied from an N:Ti ratio of 0.6-1.1 by controlling thearrival rates of Ti and nitrogen ions.Meanwhile,simple models are used to describe the evolution of compressivestress as function of the arrival ratio and the composition of the ion-assisted TiN films.

  7. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  8. Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

    NARCIS (Netherlands)

    Botman, A.; Mulders, J.J.L.; Hagen, C.W.

    2009-01-01

    The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast ‘point-and-shoot’ creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One sig

  9. Thermo-Mechanical Properties of Alumina Films Created Using the Atomic Layer Deposition Technique

    Science.gov (United States)

    2010-01-01

    23 (9) (2008) 2443–2457. [32] G.G. Stoney, The tension ofmetallic films deposited by electrolysis , Proc. R. Soc. A82 (553) (1909) 172–175. [33] M...Springer-Verlag, New York, 2006. [37] R.M. Keller, S.P. Baker, E. Arzt, Stress–temperature behavior of unpassivated thin copper films, Acta Mater. 47 (2

  10. Effect of annealing temperature on the optical spectra of CdS thin films deposited at low solution concentrations by Chemical Bath Deposition (CBD) Technique.

    Science.gov (United States)

    Rizwan, Zahid; Zakaria, Azmi; Mohd Ghazali, Mohd Sabri; Jafari, Atefeh; Din, Fasih Ud; Zamiri, Reza

    2011-02-22

    Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).

  11. Molecular dynamics simulations of the tribological behaviour of a water-lubricated amorphous carbon-fluorine PECVD coating

    Science.gov (United States)

    Rullich, Markus; Weiss, Volker C.; Frauenheim, Thomas

    2013-07-01

    Hybrid bearings comprising ceramic balls and steel rings exhibit increased wear-resistance and a reduced coefficient of friction (COF) compared with standard steel bearings. Using plasma-enhanced chemical vapour deposition (PECVD) coatings to modify the surface properties, the performance of these bearings can be further improved. Fluorine-containing amorphous hydrogenated carbon (a-C : F : H) films are well suited to this purpose. To study the influence of such coatings on the friction characteristics of key parts of hybrid bearings, a model of an a-C : F : H film was constructed and employed in molecular dynamics simulations of two slabs sliding past each other, lubricated by water. With one slab being pulled by a virtual spring, the perpendicular force (load) was kept constant using a barostat. For comparison, a system of two silicon dioxide (cristobalite) slabs and a mixed system consisting of a cristobalite slab and an a-C : F : H slab were investigated. Our results indicate a linear dependence of the friction force on the perpendicular force. With an increasing amount of water between the slabs, the COFs decrease. A decrease in temperature leads to an increased COF, while a decrease in the relative velocity of the slabs does not influence the COF between two a-C : F : H slabs, but reduces the COF for the other two systems. Our results for the COF and its dependence on temperature and relative sliding velocity generally agree well both with experiments and with simulations for similar systems reported in the literature.

  12. Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling

    NARCIS (Netherlands)

    Kovalgin, A.Y.; Boogaard, A.; Brunets, I.; Aarnink, A.A.I.; Wolters, R.A.M.

    2009-01-01

    Our study is focused on Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon dioxide films at low temperatures (< 150 oC) using Inductively Coupled (IC) High-Density (HD) plasma source. We recently fabricated Thin Film Transistors (TFTs) with high-quality ICPECVD gate oxides, which exhibited

  13. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    Assche, F.J.H. Van; Unnikrishnan, S.; Michels, J.J.; Mol, A.M.B. van; Weijer, P. van de; Sanden, M.C.M. van de; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells

  14. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  15. Hydrogenated Silicon Layers and Solar Cells Deposited at Very Low Substrate Temperature

    NARCIS (Netherlands)

    Bronsveld, P.C.P.

    2013-01-01

    For direct production of solar cells on cheap plastics, the quality of VHF-PECVD deposited intrinsic and doped silicon layers made at substrate temperatures ≤ 100 °C was optimized. The investigation showed that at lower substrate temperatures, higher hydrogen dilution of the source gas silane was re

  16. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  17. Fabrication and evaluation of CdS/PbS thin film solar cell by chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Saikia, Dulen, E-mail: dulen.s@rediffmail.com; Phukan, Pallabi

    2014-07-01

    A solar cell with the structure glass/SnO{sub 2}/CdS/PbS/HgTe has been fabricated where both window (CdS) and absorber (PbS) layers were deposited by a chemical bath deposition technique which is completely free from any complexing agents. The films were prepared by in-situ thermolysis of precursors confined in polyvinyl alcohol matrix (PVA). As the method is free of any complexing agent, hence no need to control the pH of the solution. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and UV–Vis absorption spectroscopy. The surface morphology clearly shows that as synthesized CdS/PVA and PbS/PVA thin films were nanostructured, almost homogeneous, without any pinholes or cracks and covered the substrate well. The photovoltaic parameters of the cell were measured with the Keithley 2400 source meter under one sun illumination and efficiency of the cell was found to be 1.668%. - Highlights: • Polyvinyl alcohol matrix-capped PbS thin film from a complexing agent free system • Fabrication of CdS/PbS solar cell based on chemical bath deposition technique • An efficiency of 1.668% is achieved under one SUN illumination.

  18. Higher lung deposition with Respimat® Soft Mist™ Inhaler than HFA-MDI in COPD patients with poor technique

    Directory of Open Access Journals (Sweden)

    Peter Brand

    2008-08-01

    Full Text Available Peter Brand1, Bettina Hederer2, George Austen3, Helen Dewberry3, Thomas Meyer41RWTH, Aachen, Germany; 2Boehringer Ingelheim, Ingelheim, Germany; 3Boehringer Ingelheim, Bracknell, UK; 4Inamed Research, Gauting, GermanyAbstract: Aerosols delivered by Respimat® Soft Mist™ Inhaler (SMI are slower-moving and longer-lasting than those from pressurized metered-dose inhalers (pMDIs, improving the efficiency of pulmonary drug delivery to patients. In this four-way cross-over study, adults with chronic obstructive pulmonary disease (COPD and with poor pMDI technique received radiolabelled Berodual® (fenoterol hydrobromide 50 µg/ipratropium bromide 20 µg via Respimat® SMI or hydrofluoroalkane (HFA-MDI (randomized order on test days 1 and 2, with no inhaler technique training. The procedure was repeated on test days 3 and 4 after training. Deposition was measured by gamma scintigraphy. All 13 patients entered (9 males, mean age 62 years; FEV1 46% of predicted inhaled too fast at screening (peak inspiratory flow rate [IF]: 69–161 L/min. Whole lung deposition was higher with Respimat® SMI than with pMDI for untrained (37% of delivered dose vs 21% of metered dose and trained patients (53% of delivered vs 21% of metered dose (pSign-Test = 0.15; pANOVA< 0.05. Training also improved inhalation profiles (slower average and peak IF as well as longer breath-hold time. Drug delivery to the lungs with Respimat® SMI is more efficient than with pMDI, even with poor inhaler technique. Teaching patients to hold their breath as well as to inhale slowly and deeply increased further lung deposition using Respimat® SMI.Keywords: chronic obstructive pulmonary disease, drug delivery, inhalation, metered-dose inhaler, poor inhalation technique, training

  19. An economic CVD technique for pure SnO2 thin films deposition: Temperature effects

    Indian Academy of Sciences (India)

    M Maleki; S M Rozati

    2013-04-01

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 ◦C was about 27 /cm2. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.

  20. Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

    Science.gov (United States)

    Schubert, J.; Schöning, M. J.; Schmidt, C.; Siegert, M.; Mesters, St.; Zander, W.; Kordos, P.; Lüth, H.; Legin, A.; Mourzina, Yu. G.; Seleznev, B.; Vlasov, Yu. G.

    One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

  1. Optimization of the Automated Spray Layer-by-Layer Technique for Thin Film Deposition

    Science.gov (United States)

    2010-06-01

    she was extremely busy running our household of five, homeschooling our son and volunteering. She amazes me every single day. I know that her... benefit to using solutions in excess of 80 mmol of PAA. However, at concentrations less than 80 mmol for the other standard parameter values it is...maximum film thickness. These results demonstrate that faster film deposition time is not the only benefit of Spray-LbL’s shorter polyelectrolyte to

  2. Thick CrN/NbN multilayer coating deposited by cathodic arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, Juliano Avelar; Tschiptschin, Andre Paulo; Souza, Roberto Martins, E-mail: antschip@usp.br [Universidade de Sao Paulo (USP), SP (Brazil); Lima, Nelson Batista de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2017-01-15

    The production of tribological nanoscale multilayer CrN/NbN coatings up to 6 μm thick by Sputtering/HIPIMS has been reported in literature. However, high demanding applications, such as internal combustion engine parts, need thicker coatings (>30 μm). The production of such parts by sputtering would be economically restrictive due to low deposition rates. In this work, nanoscale multilayer CrN/NbN coatings were produced in a high-deposition rate, industrial-size, Cathodic Arc Physical Vapor Deposition (ARC-PVD) chamber, containing three cathodes in alternate positions (Cr/ Nb/Cr). Four 30 μm thick NbN/CrN multilayer coatings with different periodicities (20, 10, 7.5 and 4 nm) were produced. The coatings were characterized by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). The multilayer coating system was composed of alternate cubic rock salt CrN and NbN layers, coherently strained due to lattice mismatch. The film grew with columnar morphology through the entire stratified structure. The periodicities adopted were maintained throughout the entire coating. The 20 nm periodicity coating showed separate NbN and CrN peaks in the XRD patterns, while for the lower periodicity (≤10nm) coatings, just one intermediate lattice (d-spacing) was detected. An almost linear increase of hardness with decreasing bilayer period indicates that interfacial effects can dominate the hardening mechanisms. (author)

  3. Adhesion improvement of carbon-based coatings through a high ionization deposition technique

    Science.gov (United States)

    Broitman, E.; Hultman, L.

    2012-06-01

    The deposition of highly adherent carbon nitride (CNx) films using a pretreatment with two high power impulse magnetron sputtering (HIPIMS) power supplies in a master-slave configuration is reviewed. SKF3 (AISI 52100) steel substrates were pretreated in the environment of a high ionized Cr+Ar plasma in order to sputter clean the surface and implant Cr metal ions. CNx films were subsequently deposited at room temperature by DC magnetron sputtering from a high purity C target in a N2/Ar plasma discharge. All processing was done in an industrial-scale CemeCon CC800 coating system. A series of depositions were obtained with samples pretreated at different bias voltages (DC and pulsed). The adhesion of CNx films, evaluated by the Daimler-Benz Rockwell-C test, reaches strength quality HF1. Adhesion results are correlated to high resolution transmission electron microscopy observations confirming the formation of an optimal interfacial mixing layer of Cr and steel. The throwing power increase for HIPIMS coatings is associated to the higher ionization in the plasma discharge.

  4. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    Science.gov (United States)

    Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

    2015-02-01

    Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

  5. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    Science.gov (United States)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  6. Solution Layer Deposition: A Technique for the Growth of Ultra-Pure Manganese Oxides on Silica at Room Temperature.

    Science.gov (United States)

    Cure, Jérémy; Piettre, Kilian; Coppel, Yannick; Beche, Eric; Esvan, Jérôme; Collière, Vincent; Chaudret, Bruno; Fau, Pierre

    2016-02-24

    With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal-organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal-organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state (29) Si MAS NMR, XPS, SIMS, and HRTEM.

  7. CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

    Energy Technology Data Exchange (ETDEWEB)

    Rotaru, Andrei [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Mietlarek-Kropidlowska, Anna [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Constantinescu, Catalin, E-mail: catalin.constantinescu@inflpr.ro [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Scarisoreanu, Nicu; Dumitru, Marius [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Strankowski, Michal [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Rotaru, Petre [University of Craiova, Faculty of Physics, 13 A.I. Cuza St., Craiova RO-200585, Dolj (Romania); Ion, Valentin [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Vasiliu, Cristina [INOE 2000 - National Institute for Optoelectronics, 1 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Becker, Barbara [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Dinescu, Maria [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania)

    2009-05-15

    Thin films of [Cd{l_brace}SSi(O-Bu{sup t}){sub 3}{r_brace}(S{sub 2}CNEt{sub 2})]{sub 2}, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.

  8. Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques

    Science.gov (United States)

    Perrotta, Alberto; Fuentes-Hernandez, Canek; Khan, Talha M.; Kippelen, Bernard; Creatore, Mariadriana; Graham, Samuel

    2017-01-01

    Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30 °C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma-assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as a function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.

  9. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

  10. Silicon nanoparticle optimization and integration into amorphous silicon via PECVD for use in photovoltaics

    Science.gov (United States)

    Klafehn, Grant W.

    An alternative approach to traditional growth methods of nanocrystalline material is co-deposition by injection of separately synthesized silicon nanoparticles into amorphous silicon. Current methods of co-deposition of silicon nanoparticles and amorphous silicon via plasma enhanced chemical vapor deposition allow the two reactors' pressures to affect each other, leading to either poor amorphous silicon quality or uncontrollable nanoparticle size and deposition rate. In this thesis, a technique for greater control of stand-alone silicon nanoparticle size and quality grown was achieved by using a slit nozzle. The nozzle was used to separate the nanoparticle and amorphous reactors, allowing for the ability to control nanoparticle size, crystallinity, and deposition rate during co-deposition, while still allowing for high quality amorphous silicon growth. Changing the width of the nozzle allowed for control of the size of the nanoparticles from 10 to 4.5 nm in diameter, and allowed for the precursor gas flow rate, and thus deposition rate, to be changed with only a 6 % change in size estimated from luminescence emission wavelength. Co-deposited samples were grown within a broad range of flow rates for the silicon nanoparticle precursor gas, resulting in each sample having a different crystal fraction. FTIR, PL, Raman, and XRD were used to analyze their composition. The silicon nanoparticle synthesis was separately optimized to control size and crystallinity, and the influence of the nanoparticle process gases on amorphous silicon growth was also explored. Finally, COMSOL simulations were performed to support and possibly predict Si-NP growth variables that pertain to Si-NP size.

  11. Characterization of ZnO:SnO2 (50:50) thin film deposited by RF magnetron sputtering technique

    Science.gov (United States)

    Cynthia, S. R.; Sivakumar, R.; Sanjeeviraja, C.; Ponmudi, S.

    2016-05-01

    Zinc oxide (ZnO) and tin oxide (SnO2) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO2 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  12. Integrated optical devices for wavelength division multiplexing using PECVD and direct UV writing techniques

    DEFF Research Database (Denmark)

    Zauner, Dan; Leistiko, Otto

    1999-01-01

    Wavelength division multiplexing (WDM) is the currents tep in the development of optical telecommunication. The emphasis of the project is to explore the exisiting photonic technology to realize integrated optical structures for WDM systems. Two methods of fabricting silica on silicon buried...

  13. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  14. Determination of the optical parameters of a-Si:H thin films deposited by hot wire–chemical vapour deposition technique using transmission spectrum only

    Indian Academy of Sciences (India)

    Nabeel A Bakr; A M Funde; V S Waman; M M Kamble; R R Hawaldar; D P Amalnerkar; S W Gosavi; S R Jadkar

    2011-03-01

    Three demonstration samples of intrinsic hydrogenated amorphous silicon (a-Si:H) films were deposited using hot wire–chemical vapour deposition (HW–CVD) technique. The optical parameters and the thickness were determined from the extremes of the interference fringes of transmission spectrum in the range of 400–2500 nm using the envelope method. The calculated values of the refractive index () were fitted using the two-term Cauchy dispersion relation and the static refractive index values (0) obtained were 2.799, 2.629 and 3.043 which were in the range of the reported values. The calculated thicknesses for all samples were cross-checked with Taly-Step profilometer and found to be almost equal. Detailed analysis was carried out to obtain the optical band gap (g) using Tauc’s method and the estimated values were 1.99, 2.01 and 1.75 eV. The optical band gap values were correlated with the hydrogen content (H) in the samples calculated from Fourier transform infrared (FTIR) analysis. An attempt was made to apply Wemple–DiDomenico single-effective oscillator model to the a-Si:H samples to calculate the optical parameters. The optical band gap obtained by Tauc’s method and the static refractive index calculated from Cauchy fitting are in good agreement with those obtained by the single-effective oscillator model. The real and the imaginary parts of dielectric constant (r, ), and the optical conductivity () were also calculated.

  15. Measurement of LHCD edge power deposition through modulation techniques on Alcator C-Mod

    Energy Technology Data Exchange (ETDEWEB)

    Faust, I. C.; Brunner, D.; LaBombard, B.; Parker, R. R.; Baek, S. G.; Chilenksi, M. A.; Hubbard, A.; Hughes, J. W.; Terry, J. L.; Shiraiwa, S.; Walk, J. R.; Wallace, G. M.; Whyte, D. G. [MIT Plasma Science and Fusion Center, Cambridge, MA USA (United States); Edlund, E. [Princeton Plasma Physics Laboratory, Princeton, NJ USA (United States)

    2015-12-10

    The efficiency of LHCD on Alcator C-Mod drops exponentially with line average density. At reactor relevant densities (> 1 · 1020 [m{sup −3}]) no measurable current is driven. While a number of causes have been suggested, no specific mechanism has been shown to be responsible for the loss of current drive at high density. Fast modulation of the LH power was used to isolate and quantify the LHCD deposition within the plasma. Measurements from these plasmas provide unique evidence for determining a root cause. Modulation of LH power in steady plasmas exhibited no correlated change in the core temperature. A correlated, prompt response in the edge suggests that the loss in efficiency is related to a edge absorption mechanism. This follows previous results which found the generation of n{sub ||}-independent SOL currents. Multiple Langmuir probe array measurements of the conducted heat conclude that the lost power is deposited near the last closed flux surface. The heat flux induced by LH waves onto the outer divertor is calculated. Changes in the neutral pressure, ionization and hard X-ray emission at high density highlight the importance of the active divertor in the loss of efficiency. Results of this study implicate a mechanism which may occur over multiple passes, leading to power absorption near the LCFS.

  16. Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

    Science.gov (United States)

    Miyoshi, Kazuhisa

    2000-01-01

    The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

  17. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    Science.gov (United States)

    Stern, E.; Cheng, G.; Guthrie, S.; Turner-Evans, D.; Broomfield, E.; Lei, B.; Li, C.; Zhang, D.; Zhou, C.; Reed, M. A.

    2006-06-01

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

  18. In Situ Synthesis and Characterization of Fe-Based Metallic Glass Coatings by Electrospark Deposition Technique

    Science.gov (United States)

    Burkov, Alexander A.; Pyachin, S. A.; Ermakov, M. A.; Syuy, A. V.

    2017-02-01

    Crystalline FeWMoCrBC electrode materials were prepared by conventional powder metallurgy. Metallic glass (MG) coatings were produced by electrospark deposition onto AISI 1035 steel in argon atmosphere. X-ray diffraction and scanning electron microscopy verified the amorphous structure of the as-deposited coatings. The coatings have a thickness of about 40 microns and a uniform structure. The results of dry sliding wear tests against high-speed steel demonstrated that Fe-based MG coatings had a lower friction coefficient and more than twice the wear resistance for 20 km sliding distance with respect to AISI 1035 steel. High-temperature oxidation treatment of the metal glass coatings at 1073 K in air for 12 h revealed that the oxidation resistance of the best coating was 36 times higher than that for bare AISI 1035 steel. These findings are expected to broaden the applications of electrospark Fe-based MG as highly protective and anticorrosive coatings for mild steel.

  19. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.com [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Senthamilselvi, V. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Department of Physics, Kunthavai Naachiyaar Government College for Women (Autonomous), Thanjavur-613 007, Tamil Nadu (India)

    2013-04-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  20. Effect of active screen plasma nitriding pretreatment on wear behavior of TiN coating deposited by PACVD technique

    Energy Technology Data Exchange (ETDEWEB)

    Raoufi, M., E-mail: raoufi@iust.ac.ir [School of Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Mirdamadi, Sh. [School of Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Mahboubi, F. [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Ahangarani, Sh. [Advanced Materials and Renewable Energies Dep., Iranian Research Organization for Science and Technology (Iran, Islamic Republic of); Mahdipoor, M.S. [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Elmkhah, H. [Department of Metallurgical Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of)

    2012-08-01

    Titanium based alloys are used extensively for improving wear properties of different parts due to their high hardness contents. Titanium nitride (TiN) is among these coatings which can be deposited on surface using various techniques such as CVD, PVD and PACVD. Their weak interface with substrate is one major drawback which can increase the total wear in spite of favorite wear behavior of TiN. Disc shaped samples from AISI H13 (DIN 1.2344) steel were prepared in this study. Single TiN coating was deposited on some of them while others have experienced a TiN deposition by active screen plasma nitriding (ASPN). Hardness at the surface and depth of samples was measured through Vickers micro hardness test which revealed 1810 Hv hardness as the maximum values for a dual-layered ASPN-TiN. Pin-on-disc wear test was done in order to study the wear mechanism. In this regard, the wear behavior of samples was investigated against pins from 100Cr6 (Din 1.3505) bearing steel and tungsten carbide-cobalt (WC-Co) steel. It was evidenced that the dual-layer ASPN-TiN coating has shown the least weight loss with the best wearing behavior because of its high hardness values, stable interface and acceptable resistance against peeling during wearing period.

  1. Characterization and photocatalytic activity of boron-doped TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; O M Hussain

    2008-10-01

    Boron doped TiO2 thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an – scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO2 matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO2 thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO2 thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.

  2. Using wire shaping techniques and holographic optics to optimize deposition characteristics in wire-based laser cladding

    Science.gov (United States)

    Goffin, N. J.; Higginson, R. L.; Tyrer, J. R.

    2016-12-01

    In laser cladding, the potential benefits of wire feeding are considerable. Typical problems with the use of powder, such as gas entrapment, sub-100% material density and low deposition rate are all avoided with the use of wire. However, the use of a powder-based source material is the industry standard, with wire-based deposition generally regarded as an academic curiosity. This is because, although wire-based methods have been shown to be capable of superior quality results, the wire-based process is more difficult to control. In this work, the potential for wire shaping techniques, combined with existing holographic optical element knowledge, is investigated in order to further improve the processing characteristics. Experiments with pre-placed wire showed the ability of shaped wire to provide uniformity of wire melting compared with standard round wire, giving reduced power density requirements and superior control of clad track dilution. When feeding with flat wire, the resulting clad tracks showed a greater level of quality consistency and became less sensitive to alterations in processing conditions. In addition, a 22% increase in deposition rate was achieved. Stacking of multiple layers demonstrated the ability to create fully dense, three-dimensional structures, with directional metallurgical grain growth and uniform chemical structure.

  3. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  4. A Novel Technique for the Deposition of Bismuth Tungstate onto Titania Nanoparticulates for Enhancing the Visible Light Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Marina Ratova

    2016-07-01

    Full Text Available A novel powder handling technique was used to allow the deposition of bismuth tungstate coatings onto commercial titanium dioxide photocatalytic nanoparticles. The coatings were deposited by reactive pulsed DC magnetron sputtering in an argon/oxygen atmosphere. The use of an oscillating bowl with rotary particle propagation, positioned beneath two closed-field planar magnetrons, provided uniform coverage of the titania particle surfaces. The bismuth/tungsten atomic ratio of the coatings was controlled by varying the power applied to each target. The resulting materials were characterized by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX, Brunauer–Emmett–Teller (BET surface area measurements, transmission electron microscopy (TEM, and UV-visible diffuse reflectance spectroscopy. Photocatalytic properties under visible light irradiation were assessed using an acetone degradation test. It was found that deposition of bismuth tungstate onto titania nanoparticles resulted in significant increases in visible light photocatalytic activity, compared to uncoated titania. Of the coatings studied, the highest photocatalytic activity was measured for the sample with a Bi/W atomic ratio of 2/1.

  5. Evaluation and study of advanced optical contamination, deposition, measurement, and removal techniques. [including computer programs and ultraviolet reflection analysis

    Science.gov (United States)

    Linford, R. M. F.; Allen, T. H.; Dillow, C. F.

    1975-01-01

    A program is described to design, fabricate and install an experimental work chamber assembly (WCA) to provide a wide range of experimental capability. The WCA incorporates several techniques for studying the kinetics of contaminant films and their effect on optical surfaces. It incorporates the capability for depositing both optical and contaminant films on temperature-controlled samples, and for in-situ measurements of the vacuum ultraviolet reflectance. Ellipsometer optics are mounted on the chamber for film thickness determinations, and other features include access ports for radiation sources and instrumentation. Several supporting studies were conducted to define specific chamber requirements, to determine the sensitivity of the measurement techniques to be incorporated in the chamber, and to establish procedures for handling samples prior to their installation in the chamber. A bibliography and literature survey of contamination-related articles is included.

  6. Research Update: Large-area deposition, coating, printing, and processing techniques for the upscaling of perovskite solar cell technology

    Directory of Open Access Journals (Sweden)

    Stefano Razza

    2016-09-01

    Full Text Available To bring perovskite solar cells to the industrial world, performance must be maintained at the photovoltaic module scale. Here we present large-area manufacturing and processing options applicable to large-area cells and modules. Printing and coating techniques, such as blade coating, slot-die coating, spray coating, screen printing, inkjet printing, and gravure printing (as alternatives to spin coating, as well as vacuum or vapor based deposition and laser patterning techniques are being developed for an effective scale-up of the technology. The latter also enables the manufacture of solar modules on flexible substrates, an option beneficial for many applications and for roll-to-roll production.

  7. A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

    NARCIS (Netherlands)

    Mahan, A.H.; Ahrenkiel, S.P.; Schropp, R.E.I.; Li, H. B. T.; Ginley, D.S.

    2008-01-01

    From TEM, XRD and Raman measurements, we compare the crystallization kinetics when HWCVD and PECVD a-Si:H films, containing different initial film hydrogen contents (CH), are crystallized by annealing at 600 °C. For the HWCVD films, the nucleation rate increases, and the incubation time and the full

  8. Effects of Ni doping on photocatalytic activity of TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; K R Gunashekar

    2008-10-01

    The TiO2 thin films doped by Ni uniformly and non-uniformly were prepared on glass substrate from an aqueous solution of ammonium hexa-fluoro titanate and NiF2 by liquid phase deposition technique. The addition of boric acid as an – scavenger will shift the equilibrium to one side and thereby deposition of the film is progressed. The rate of the reaction and the nature of deposition depend on growing time and temperature. The resultant films were characterized by XRD, EDAX, UV and SEM. The result shows that the deposited films have amorphous background, which becomes crystalline at 500°C. The EDAX data confirms the existence of Ni atoms in TiO2 matrix. XRD analysis reveals the peaks corresponding to Ni but no peak of crystalline NiO was found. The transmittance spectra of Ni uniformly and non-uniformly doped TiO2 thin films show `blue shift and red shift’, respectively. Ni-doped TiO2 thin films can be used as photocatalyst for the photodegradation of methyl orange dye. It was found that, organic dye undergoes degradation efficiently in presence of non-uniformly Ni-doped TiO2 thin films when compared to uniformly doped films and pure TiO2 films under visible light. The photocatalytic activity increases with increase in the concentration of Ni in case of nonuniformly doped thin films but decreases with the concentration when uniformly doped thin films were used.

  9. Dry deposition of acidic air pollutants to tree leaves, determined by a modified leaf-washing technique

    Science.gov (United States)

    Watanabe, Mirai; Takamatsu, Takejiro; Koshikawa, Masami K.; Yamamura, Shigeki; Inubushi, Kazuyuki

    Dry deposition fluxes ( FL) of NO 3- and SO 42- to leaf surfaces were measured for Japanese red pine ( Pinus densiflora), Japanese cedar ( Cryptomeria japonica), Japanese cypress ( Chamaecyparis obtusa), and Japanese white oak ( Quercus myrsinaefolia), together with atmospheric concentrations ( CL) of NO x (NO + NO 2), T-NO 3 (gaseous HNO 3 + particulate NO 3-) and SO x (gaseous SO 2 + particulate SO 42-) around the leaves in a suburban area of Japan, using a modified leaf-washing technique. FL of NO 3- and SO 42- decreased as follows: pine >> cedar > cypress ≥ oak and pine >> cedar > oak ≥ cypress, respectively. FL of NO 3- for all tree species fluctuated synchronously with CL of T-NO 3. FL of SO 42- fluctuated with CL of SO x, but the dominant pollutant deposited (SO 2 or SO 42-) appeared to differ for different tree species. Dry deposition conductance ( KL) of T-NO 3 and SO x was derived as an FL/ CL ratio. Seasonal variations of KL likely reflect the gas/particle ratios of T-NO 3 and SO x, which were affected by meteorological conditions such as temperature. Dry deposition velocities ( Vd) of T-NO 3 and SO x were obtained as the mathematical product of annual mean KL and the total leaf surface areas in the forests. The comparison of Vd among tree species indicated that the loads of acidic air pollutants were higher to coniferous forests than broad-leaved forest because of the higher KL and/or larger leaf surface areas.

  10. ELECTRICAL FURNACE FOR PRODUCING CARBIDE COATINGS USING THE THERMOREACTIVE DEPOSITION/DIFFUSION TECHNIQUE

    Directory of Open Access Journals (Sweden)

    FABIO CASTILLEJO

    2011-01-01

    the presence of VC and NbC, and as MEB results clearly show, the formation of regular thickness coatings. The results obtained allow for assessing that the designed and built furnace fulfills the requirements of the TRD technique for obtaining different types of hard coatings.

  11. Physical properties of ultrafast deposited micro- and nanothickness amorphous hydrogenated carbon films for medical devices and prostheses.

    Science.gov (United States)

    Zaharia, T; Sullivan, I L; Saied, S O; Bosch, R C; Bijker, M D

    2007-02-01

    Hydrogenated amorphous carbon films with diamond-like structures have been formed on different substrates at very low energies and temperatures by a plasma-enhanced chemical vapour deposition (PECVD) process employing acetylene as the precursor gas. The plasma source was of a cascaded arc type with argon as the carrier gas. The films grown at very high deposition rates were found to have a practical thickness limit of approximately 1.5 microm, above which delamination from the substrate occurred. Deposition on silicon (100), glass, and plastic substrates has been studied and the films characterized in terms of sp3 content, roughness, hardness, adhesion, and optical properties. Deposition rates of up to 20 nm/s have been achieved at substrate temperatures below 100 degrees C. A typical sp3 content of 60-75 per cent in the films was determined by X-ray-generated Auger electron spectroscopy (XAES). The hardness, reduced modulus, and adhesion of the films were measured using a MicroMaterials NanoTest indenter/scratch tester. Hardness was found to vary from 4 to 13 GPa depending on the admixed acetylene flow and substrate temperature. The adhesion of the film to the substrate was significantly influenced by the substrate temperature and whether an in situ d.c. cleaning was employed prior to the deposition process. The hydrogen content in the film was measured by a combination of the Fourier transformation infrared (FTIR) spectroscopy and Rutherford backscattering (RBS) techniques. From the results it is concluded that the films formed by the process described here are ideal for the coating of long-term implantable medical devices, such as prostheses, stents, invasive probes, catheters, biosensors, etc. The properties reported in this publication are comparable with good-quality films deposited by other PECVD methods. The advantages of these films are the low ion energy and temperature of deposition, ensuring that no damage is done to sensitive substrates, very high

  12. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  13. Confocal Raman studies in determining crystalline nature of PECVD grown Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Nafis; Bhargav, P. Balaji; Ramasamy, P. [SSN Research Centre, Kalavakkam-603110, Tamilnadu (India); Department of Physics, SSN College of Engineering, Kalavakkam-603110, Tamilnadu (India); Sivadasan, A. K.; Tyagi, A. K.; Dhara, S., E-mail: dhara@igcar.gov.in [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India); Amirthapandian, S.; Panigrahi, B. K. [Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India); Bhattacharya, S. [SSN Research Centre, Kalavakkam-603110, Tamilnadu (India)

    2015-06-24

    Silicon nanowires of diameter ∼200 nm and length of 2-4 µm are grown in the plasma enhanced chemical vapour deposition technique using nanoclustered Au catalyst assisted vapour-liquid-solid process. The crystallinity in the as-grown and annealed samples is studied using confocal Raman spectroscopic studies. Amorphous phase is formed in the as-grown samples. Structural studies using high resolution transmission electron microscopy confirm the polycrystalline nature in the annealed sample.

  14. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Lajnef, M., E-mail: Mohamed.lajnef@yahoo.fr [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2010-03-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height {phi}{sub b0} parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  15. Lamellar multilayer hexadecylaniline-modified gold nanoparticle films deposited by the Langmuir-Blodgett technique

    Indian Academy of Sciences (India)

    Anita Swami; Ashavani Kumar; Murali Sastry

    2003-06-01

    Organization of hexadecylaniline (HDA)-modified colloidal gold particles at the air-water interface and the formation thereafter of lamellar, multilayer films of gold nanoparticles by the Langmuir-Blodgett technique is described in this paper. Formation of HDA-capped gold nanoparticles is accomplished by a simple biphasic mixture experiment wherein the molecule hexadecylaniline present in the organic phase leads to electrostatic complexation and reduction of aqueous chloroaurate ions, capping of the gold nanoparticles thus formed and phase transfer of the now hydrophobic particles into the organic phase. Organization of gold nanoparticles at the air-water interface is followed by surface pressure-area isotherm measurements while the formation of multilayer films of the nanoparticles by the Langmuir-Blodgett technique is monitored by quartz crystal microgravimetry, UVVis spectroscopy, Fourier transform infrared spectroscopy and transmission electron microscopy.

  16. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Science.gov (United States)

    Ahumada-Lazo, R.; Torres-Martínez, L. M.; Ruíz-Gómez, M. A.; Vega-Becerra, O. E.; Figueroa-Torres, M. Z.

    2014-12-01

    The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV-visible spectroscopy (UV-Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  17. Hydrocarbon oxidation over catalysts prepared by the molecular layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Koltsov, S.I.; Smirnov, V.M.; Postnov, V.N.; Postnova, A.M.; Aleskovskii, V.B.

    1980-01-01

    By depositing consecutive uniform monolayers of phosphorus pentoxide and vanadium pentoxide on a large-surface-area (240 sq m/g) silica gel, active and selective catalysts for hydrocarbon oxidation were obtained. Thus, in piperylene oxidation by air at 330/sup 0/-430/sup 0/C and 2000-18,000/hr space velocity, a productive capacity of 220 g/l./hr with 41 mole % each maleic anhydride yield and selectivity was achieved over a SiO/sub 2/-P/sub 2/O/sub 5//P/sub 2/O/sub 5//V/sub 2/O/sub 5/ catalyst (120 sq cm/g surface area), compared with 80 g/l./hr for a P/sub 2/O/sub 5/-V/sub 2/O/sub 5/ catalyst prepared by impregnation. In benzene oxidation, maleic anhydride yields of 52 and 60% and selectivities of 63 and 79% were achieved over SiO/sub 2/-P/sub 2/O/sub 5//V/sub 2/O/sub 5/ and SiO/sub 2/-P/sub 2/O/sub 5//P/sub 2/O/sub 5//P/sub 2/O/sub 5//V/sub 2/O/sub 5/ catalysts, respectively, compared with a 6% yield and very low selectivity over the impregnated P/sub 2/O/sub 5/-V/sub 2/O/sub 5/ catalyst. The molecular-layer catalysts retained their total activity for 100 hr on stream and permitted to reduce the oxidation temperature by 50/sup 0/-70/sup 0/C.

  18. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  19. Copper phthalocyanine films deposited by liquid-liquid interface recrystallization technique (LLIRCT).

    Science.gov (United States)

    Patil, K R; Sathaye, S D; Hawaldar, R; Sathe, B R; Mandale, A B; Mitra, A

    2007-11-15

    The simple recrystallization process is innovatively used to obtain the nanoparticles of copper phthalocyanine by a simple method. Liquid-liquid interface recrystallization technique (LLIRCT) has been employed successfully to produce small sized copper phthalocyanine nanoparticles with diameter between 3-5 nm. The TEM-SAED studies revealed the formation of 3-5 nm sized with beta-phase dominated mixture of alpha and beta copper phthalocyanine nanoparticles. The XRD, SEM, and the UV-vis studies were further carried out to confirm the formation of copper phthalocyanine thin films. The cyclic voltametry (CV) studies conclude that redox reaction is totally reversible one electron transfer process. The process is attributed to Cu(II)/Cu(I) redox reaction.

  20. Micro-Structures of Hard Coatings Deposited on Titanium Alloys by Laser Alloying Technique

    Science.gov (United States)

    Li, Wei; Yu, Huijun; Chen, Chuanzhong; Wang, Diangang; Weng, Fei

    2013-01-01

    This work is based on micro-structural performance of the Ti-B4C-C laser alloying coatings on Ti-6Al-4V titanium alloy. The test results indicated that laser alloying of the Ti-B4C-C pre-placed powders on the Ti-6Al-4V alloy substrate can form the ceramics reinforced hard alloying coatings, which increased the micro-hardness and wear resistance of substrate. The test result also indicated that the TiB phase was produced in alloying coating, which corresponded to its (101) crystal plane. In addition, yttria has a refining effect on micro-structures of the laser alloying coating, and its refinement mechanism was analyzed. This research provided essential experimental and theoretical basis to promote the applications of the laser alloying technique in manufacturing and repairing of the aerospace parts.

  1. 3D printing of high-resolution PLA-based structures by hybrid electrohydrodynamic and fused deposition modeling techniques

    Science.gov (United States)

    Zhang, Bin; Seong, Baekhoon; Nguyen, VuDat; Byun, Doyoung

    2016-02-01

    Recently, the three-dimensional (3D) printing technique has received much attention for shape forming and manufacturing. The fused deposition modeling (FDM) printer is one of the various 3D printers available and has become widely used due to its simplicity, low-cost, and easy operation. However, the FDM technique has a limitation whereby its patterning resolution is too low at around 200 μm. In this paper, we first present a hybrid mechanism of electrohydrodynamic jet printing with the FDM technique, which we name E-FDM. We then develop a novel high-resolution 3D printer based on the E-FDM process. To determine the optimal condition for structuring, we also investigated the effect of several printing parameters, such as temperature, applied voltage, working height, printing speed, flow-rate, and acceleration on the patterning results. This method was capable of fabricating both high resolution 2D and 3D structures with the use of polylactic acid (PLA). PLA has been used to fabricate scaffold structures for tissue engineering, which has different hierarchical structure sizes. The fabrication speed was up to 40 mm/s and the pattern resolution could be improved to 10 μm.

  2. Modification of the morphology and optical properties of SnS films using glancing angle deposition technique

    Science.gov (United States)

    Sazideh, M. R.; Dizaji, H. Rezagholipour; Ehsani, M. H.; Moghadam, R. Zarei

    2017-05-01

    Tin sulfide (SnS) films were prepared by thermal evaporation method using Glancing Angle Deposition (GLAD) technique at zero and different oblique incident flux angles (α = 45°, 55°, 65°, 75° and 85°). The physical properties of prepared films were systematically investigated. The X-ray diffraction analysis indicated that the film deposited at α = 0° formed as single phase with an orthorhombic structure. However, the layers became amorphous at α = 45°, 55°, 65°, 75° and 85°. Beside the appearance of amorphous feature in the film prepared at α higher than zero, Sn2S3 phase was also observed. The top and cross-sectional field emission scanning electron microscope (FESEM) images of the samples showed noticeable changes in the structure and morphology of individual nano-plates as a function of incident angle. The band gap and refractive index values of the films were calculated by optical transmission measurements. The optical band-gap values were observed to increase with increasing the incident flux angle. This can be due to presence of Sn2S3 phase observed in the samples produced at α values other than zero. The effective refractive index and porosity exhibit an opposite evolution as the incident angle α rises. At α = 85° the layers show a considerable change in effective refractive index (Δn = 1.7) at near-IR spectral range.

  3. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  4. Structure and sliding wear behavior of 321 stainless steel/Al composite coating deposited by high velocity arc spraying technique

    Institute of Scientific and Technical Information of China (English)

    CHEN Yong-xiong; XU Bin-shi; LIU Yan; LIANG Xiu-bing; XU Yi

    2008-01-01

    A typical 321 stainless steel/aluminum composite coating (321/Al coating) was prepared by high velocity arc spraying technique (HVAS) with 321 stainless steel wire as the anode and aluminum wire as the cathode.The traditional 321 stainless steel coating was also prepared for comparison.Tribological properties of the coatings were evaluated with the ring-block wear tester under different conditions.The structure and worn surface of the coatings were analyzed by scanning electron microscopy (SEM),X-ray diffractometry (XRD) and energy dispersion spectroscopy (EDS).The results show that,except for aluminum phase addition in tne 321/Al coating,no other phases are created compared with the 321 coating.However,due to the addition of aluminum,the 321/Al coating forms a type of "ductile/hard phases inter-deposited" structure and performs quite different tribological behavior.Under the dry sliding condition,the anti-wear property of 321/Al coating is about 42% lower than that of 321 coating.Butunder the oil lubricated conditions with or without 32h oil-dipping pretreatment,the anti-wear property of 321/Al coating is about 9% and 5% higher than that of 321 coating,respectively.The anti-wear mechanism of the composite coating is mainly relevant to the decrease of oxide impurities and the strengthening action resulted from the "ductile/hard phases inter-deposited" coating structure.

  5. The Characteristics of an Antibacterial TiAgN Thin Film Coated by Physical Vapor Deposition Technique.

    Science.gov (United States)

    Kang, Byeong-Mo; Jeong, Woon-Jo; Park, Gye-Choon; Yoon, Dong-Joo; Ahn, Ho-Geun; Lim, Yeong-Seog

    2015-08-01

    In this work, we found the characteristics of an antibacterial TiAgN thin film coated on the pure titanium specimen via the physical vapor deposition process (PVD). TiAgN thin films were coated using TiAg alloy targets by arc ion plating method. Changing the process parameters, the surface analysis of TiAgN thin film was observed by FE-SEM and the force of adhesion was measured with Scratch Tester. The proliferation of human gingival fibroblast (HGF) cells was examined by XTT test assay and the antibacterial properties were investigated by culturing Streptococus Mutans (KCTC 3065) using paper disk techniques. At the result of experiment, cytotoxic effects were not found and the antibacterial effects against Streptococus Mutans were appeared over 5 wt% TiAgN specimens.

  6. Preparation of Bioactive Calcium Phosphate Coating on Porous C/C Substrate by a Novel Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    XIONG Xinbo; ZENG Xierong; LI Xiaohua; Xie Shenghui; ZOU Chunli

    2008-01-01

    A novel heat substrate technique,high frequency inductive heat deposition(IHD),was introduced to coat porous carbon materials,C/C and carbon felt to improve their bioactivity.The morphologies,composition and microstructure of the resulting coatings were examined by scanning electron microscopy(SEM),energy dispersive spectra(EDS),X-ray diffractometer(XRD)and Fourier transform infrared spectroscopy (FTIR).The results show that,the calcium phosphate consisted of non-stoichiometric,CO3-containing and plate-like octacalcium phosphate(Ca8-xH2(PO4)6,OCP)could uniformly cover the entire porous surfaces of carbon materials.Good adhesion of the coating to carbon material substrates was observed.

  7. Photoluminescence and diode characteristic of ZnO thin films/junctions fabricated by pulsed laser deposition (PLD) technique

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, Kazuhiro; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Ebinokuchi, Tsuchiya, Yuri-honjo, Akita 015-0055 (Japan)

    2010-02-15

    ZnO:Ga and ZnO:P films were grown by a pulsed laser deposition (PLD) technique changing the dopant concentrations, and their photoluminescence (PL) spectra were obtained. Then, ZnO:P/ZnO:Ga junctions were fabricated and their junction characteristics were evaluated. As the Ga concentration increased in the films, the PL intensity was decreased while as the P concentration increased, the PL intensity was increased. The maximum PL intensities were obtained for the films of 0.5%(Ga) and 7.0% (P), respectively. Rectifying junction characteristics were observed only for the combination of 0.5-1.0% (Ga) and 5.0% (P) films. Mutual dopant diffusion is supposed to explain the relation between the PL and the junction characteristics. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    Science.gov (United States)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  9. Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

    Energy Technology Data Exchange (ETDEWEB)

    Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

    2017-01-15

    Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

  10. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  11. Raman Spectroscopy of Solid Oxide Fuel Cells: Technique Overview and Application to Carbon Deposition Analysis

    KAUST Repository

    Maher, R. C.

    2013-07-30

    Raman spectroscopy is a powerful characterization tool for improving the understanding of solid oxide fuel cells (SOFCs), capable of providing direct, molecularly specific information regarding the physical and chemical processes occurring within functional SOFCs in real time. In this paper we give a summary of the technique itself and highlight ex situ and in situ studies that are particularly relevant for SOFCs. This is followed by a case study of carbon formation on SOFC Ni-based anodes exposed to carbon monoxide (CO) using both ex situ and in situ Raman spectroscopy combined with computational simulations. In situ measurements clearly show that carbon formation is significantly reduced for polarized SOFCs compared to those held at open circuit potential (OCP). Ex situ Raman mapping of the surfaces showed clear variations in the rate of carbon formation across the surface of polarized anodes. Computational simulations describing the geometry of the cell showed that this is due to variations in gas access. These results demonstrate the ability of Raman spectroscopy in combination with traditional characterization tools, to provide detailed understanding of critical processes occurring within functional SOFCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. pplication of Fractal Technique for Analysis of Geophysical - Geochemical Databases in Tekieh Pb-Zn Ore Deposit (SE of Arak

    Directory of Open Access Journals (Sweden)

    Seyed Reza Mehrnia

    2017-02-01

    Full Text Available Introduction Tekieh Lead-Zinc ore deposit that is located in the Sanandaj-Sirjan structural zone has been recognized as one of the most important mineralized regions in Malayer-Isfahan metallogenic sub-state, south east of Arak (Momenzadeh and Ziseman, 1981. Carbonate host units have been developed along (or across the Vishan-Tekieh anticline as the main structure extended in NW-SE trends (Annells et al, 1985. According to geochemical investigations (Salehi, 2004, the element content of the mineralized regions has originated from Alpine post-volcanisms and subsequently it has migrated toward early Cretaceous formations (dolomitic limestones among several hypogenic stages (Torkashvand et a.2009. Also echelon type structures consisting of folded systems and inversed faulting of structures are the most common features in western and eastern parts of ore deposit regions (Annells et al, 1985. Syngenetic enrichments beside limited (rarely developed epigenetic mineralization have been known as two main phases which are closely relevant to ore forming processes in the massive lenses and vein type occurrences, respectively (Momenzadeh and Ziseman, 1981. Material and Methods In this research, two statistical techniques that consist of classical and fractal equations (Mandelbrot, 2005 were applied in geochemical (Torkashvand et al., 2009 and geophysical (Jafari, 2007 databases for obtaining the linear and nonlinear distributions of geochemical elements (Tekieh Pb-Zn content in association with resistivity variations and induction polarization measurements (Calagari, 2010. According to linear statistical techniques (Torkashvand et al., 2009, the main central parameters such as mean, median and mode in addition to variances and standard deviations as distribution tendencies could be used for obtaining the regression coefficients of the databases. However, in fractal statistics, a reliable regression between geoelectrical - geochemical anomalies should be

  13. Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

    Science.gov (United States)

    Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

    2017-07-01

    In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

  14. Potential of ITO nanoparticles formed by hydrogen treatment in PECVD for improved performance of back grid contact crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sourav; Mitra, Suchismita; Dhar, Sukanta; Ghosh, Hemanta; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com; Datta, Swapan K.; Saha, Hiranmoy

    2015-09-15

    Highlights: • Indium tin oxide (ITO) nanoparticles as back scatterers in c-Si solar cells. • ITO NP have comparatively low dissipative losses and tunable optical properties. • ITO NP formed by hydrogen plasma treatment on sputtered ITO film. • Enhanced absorption and carrier collection at longer wavelengths due to enhanced light trapping. - Abstract: This paper discusses the prospect of using indium tin oxide (ITO) nanoparticles as back scatterers in crystalline silicon solar cells instead of commonly used metal nanoparticles as ITO nanoparticles have comparatively low dissipative losses and tunable optical properties. ITO nanoparticles of ∼5–10 nm size is developed on the rear side of the solar cell by deposition of ∼5–10 nm thick ITO layer by DC magnetron sputtering followed by hydrogen treatment in PECVD. The silicon solar cell is fabricated in the laboratory using conventional method with grid metal contact at the back surface. Various characterizations like FESEM, TEM, AFM, XRD, EQE and IV characteristics are performed to analyze the morphology, chemical composition, optical characteristics and electrical performance of the device. ITO nanoparticles at the back surface of the solar cell significantly enhances the short circuit current, open circuit voltage and efficiency of the solar cell. These enhancements may be attributed to the increased absorption and carrier collection at longer wavelengths of solar spectrum due to enhanced light trapping by the ITO nanoparticles and surface passivation by the hydrogen treatment of the back surface.

  15. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials.

  16. Plasma-enhanced chemical vapor deposition of ortho-carborane: structural insights and interaction with Cu overlayers.

    Science.gov (United States)

    James, Robinson; Pasquale, Frank L; Kelber, Jeffry A

    2013-09-01

    X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) are used to investigate the chemical and electronic structure of boron carbide films deposited from ortho-carborane precursors using plasma-enhanced chemical vapor deposition (PECVD), and the reactivity of PECVD films toward sputter-deposited Cu overlayers. The XPS data provide clear evidence of enhanced ortho-carborane reactivity with the substrate, and of extra-icosahedral boron and carbon species; these results differ from results for films formed by condensation and electron beam induced cross-linking of ortho-carborane (EBIC films). The UPS data show that the valence band maximum for PECVD films is ∼1.5 eV closer to the Fermi level than for EBIC films. The XPS data also indicate that PECVD films are resistant to thermally-stimulated diffusion of Cu at temperatures up to 1000 K in UHV, in direct contrast to recently reported results, but important for applications in neutron detection and in microelectronics.

  17. Characterization of an array of Love-wave gas sensors developed using electrospinning technique to deposit nanofibers as sensitive layers.

    Science.gov (United States)

    Matatagui, D; Fernández, M J; Fontecha, J; Sayago, I; Gràcia, I; Cané, C; Horrillo, M C; Santos, J P

    2014-03-01

    The electrospinning technique has allowed that very different materials are deposited as sensitive layers on Love-wave devices forming a low cost and successful sensor array. Their excellent sensitivity, good linearity and short response time are reported in this paper. Several materials have been used to produce the nanofibers: polymers as Polyvinyl alcohol (PVA), Polyvinylpyrrolidone (PVP) and Polystirene (PS); composites with polymers as PVA+SnCl4; combined polymers as PS+Poly(styrene-alt-maleic anhydride) (PS+PSMA) and metal oxides (SnO2). In order to test the array, well-known chemical warfare agent simulants (CWAs) have been chosen among the volatile organic compounds due to their importance in the security field. Very low concentrations of these compounds have been detected by the array, such as 0.2 ppm of DMMP, a simulant of sarin nerve gas, and 1 ppm of DPGME, a simulant of nitrogen mustard. Additionally, the CWA simulants used in the experiment have been discriminated and classified using pattern recognition techniques, such as principal component analysis and artificial neural networks.

  18. Fundamental interface studies of GaSb and InAs substrates with atomic layer deposition

    Science.gov (United States)

    Greer, Frank; Baker, L.; Cook, S.; Fisher, A.; Keo, S.; Soibel, A.; Khoshakhlagh, Arezou; Nguyen, J.; Ting, D.; Gunapala, S.

    2012-10-01

    Long Wavelength infrared photodetectors based on Type-II superlattices from the 6.1Å system hold great promise for a wide variety of applications. However, as these materials are fabricated into focal plane arrays for real world applications, the small pixel sizes that are required can result in unacceptably high dark current due to a significant contribution of surface-induced leakage. These surface currents could be substantially reduced or even eliminated by the application of an appropriate passivation material. But, while a considerable amount of effort has gone into developing passivation processes and materials for these detectors (e.g. PECVD SiO2, polyimides, etc.), there is no one widely adopted standard technique in use today. Atomic layer deposition has the possibility of being an excellent method for depositing passivation because of the wide variety of materials that are readily available via ALD and the ability to conformally coat arbitrary topographies that may be found in the patterning of LWIR FPAs. In this work, fundamental materials characterization results and electrical test data will be presented for two wide band gap, high-K dielectrics (Titanium Oxide and Hafnium Oxide) looking at their nucleation and growth behavior on substrates of relevant III-V materials such as GaSb and InAs using ellispometry, XPS, and XRD. These results will be compared to more conventional passivation strategies to highlight the unique features of the ALD technique.

  19. PECVD grown multiple core planar waveguides with extremely low interface reflections and losses

    DEFF Research Database (Denmark)

    Laurent-Lund, Christian; Poulsen, Mogens Rysholt; Beukema, Martijn A

    1998-01-01

    A novel and generic method for fabricating silica-on-silicon planar lightwave circuits with cores composed of two or more different types of glasses is described. The basic process technologies used are silane/germane/nitrous-oxide based plasma enhanced chemical vapor deposition and fluorine based...... reactive ion etching. Very high-quality interfaces between the different core glasses are obtained with interface losses as low as 0.022 +/- 0.012 dB and reflection levels below -80 dB. This technique adds flexibility and ease to the design of complex silica planar waveguide components, allowing, e...

  20. Electron energy-loss spectroscopy analysis of low-temperature plasma-enhanced chemically vapor deposited a-C:H films

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A.J.; Benson, D.K.; Tracy, C.E.; Kazmerski, L.L.; Wager, J.F.

    1989-05-01

    Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (<100 /sup 0/C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp/sup 3/ carbon bonding to threefold coordinated sp/sup 2/ carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

  1. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  2. Structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique.

    Science.gov (United States)

    Ghrairi, Najla; Bouaicha, Mongi

    2012-07-01

    In this work, we report the structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique. The TiO2 film was formed on a doped fluorine tin oxide (SnO2:F, i.e., FTO) layer and used as a photo electrode in a dye solar cell (DSC). Using spectroscopic ellipsometry measurements in the 200 to 800 nm wavelengths domain, we obtain a thickness of the TiO2 film in the range of 70 to 80 nm. Characterizations by X-ray diffraction and atomic force microscopy (AFM) show a polycrystalline film. In addition, AFM investigation shows no cracks in the formed layer. Using an ultraviolet-visible near-infrared spectrophotometer, we found that the transmittance of the TiO2 film in the visible domain reaches 75%. From the measured current-voltage or I-V characteristic under AM1.5 illumination of the formed DSC, we obtain an open circuit voltage Voc = 628 mV and a short circuit current Isc = 22.6 μA, where the surface of the formed cell is 3.14 cm2.

  3. [XPS characterization of TiN layer on bearing steel surface treated by plasma immersion ion implantation and deposition technique].

    Science.gov (United States)

    Liu, Hong-xi; Jiang, Ye-hua; Zhan, Zhao-lin; Tang, Bao-yin

    2009-09-01

    Titanium nitride (TIN) hard protective films were fabricated on AISI52100 bearing steel surface employing plasma immersion ion implantation and deposition (PIIID) technique. The TiN films were characterized using a variety of test methods. Atomic force microscope (AFM) revealed that the titanium nitride film has extremely smooth surface, very high uniformity and efficiency of space filling over large areas. X-ray diffraction (XRD) result indicated that (200) crystal face of titanium nitride phase is the preferred orientation and three kinds of titanium components exist in the surface modified layer. Tailor fitting analysis of X-ray photoelectron spectroscopy (XPS) combined with Ar ion etching proved that Ti2p(1/2) and Ti2p(3/2) have two peaks in the titanium nitride film layer, respectively. It is shown that different chemical state exists in titanium compound. N(1s) bond energy of XPS has also three fitting peaks at 396.51, 397. 22 and 399.01 eV, corresponding to the nitrogen atom in TiNxOy, TiN and N--N, respectively. Combined with the XPS Tailor fitting analysis results of O(1s) bond energy, it was shown that there is a large amount of titanium nitride phase in addition to a small amount of simple substance nitrogen and oxide of titanium in the surface layer. The whole film system is made up of TiN, TiO2, N--N and Ti--O--N compound.

  4. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  5. Deposition of LaMO3 (M=Ni,Co,Cr,Al)-Oriented Films by Spray Combustion Flame Technique

    Science.gov (United States)

    Ichinose, Hiromichi; Shiwa, Yuzo; Nagano, Masamitsu

    1994-10-01

    LaMO3 (M=Ni,Co,Cr,Al) films were prepared on sintered alumina, sapphire (001) and MgO(100) at 500 900°C by spraying ultrasonically atomized aqueous solutions of nitrates into a combustion flame (spray combustion flame technique). LaNiO3 and LaCoO3 on MgO(100) crystallized in high-temperature phases (cubic) while LaCrO3 and LaAlO3 crystallized in room-temperature phases. LaMO3 (M=Ni,Co,Cr,Al) films on MgO(100) were highly oriented to (100), (100), (001) and (100), respectively, while the films on sintered alumina and sapphire were not. The electric resistivities of the dense LaMO3 (M=Ni,Co,Cr) films were as low as those of bulk ceramics. LaNiO3 film deposited on MgO above 700°C showed the lowest resistivity of about 6×10-6 Ω m. It was suggested that the reactivities of the constituent metal atoms with OH in the flame are associated with the preferred phase and the morphology of the films.

  6. Preparation of SrIrO{sub 3} thin films by using metal-organic aerosol deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Esser, Sebastian; Schneider, Melanie; Moshnyaga, Vasily; Gegenwart, Philipp [1. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-07-01

    The interplay between spin-orbit coupling and electronic correlations could lead to interesting novel states in iridium oxide materials. We focus on the perovskite phase of SrIrO{sub 3} because Moon et al. [1] showed by using optical spectroscopy and first-principles calculations that the last member of the Ruddlesden-Popper series Sr{sub n+1}Ir{sub n}O{sub 3n+1} (n = ∞) is close to the Mott transition. By using metal-organic aerosol deposition technique we have grown SrIrO{sub 3} thin films on (111)-oriented SrTiO{sub 3} substrates. The cubic symmetry of the SrTiO{sub 3} substrate ensured that the SrIrO{sub 3} thin film grew in the monoclinic perovskite phase. The X-ray diffraction results suggest that SrIrO{sub 3} thin films in perovskite structure were obtained and these show out of plane epitaxy with monoclinic (002){sub m}-orientation. The temperature dependence of the electrical resistivity of these SrIrO{sub 3} thin films were investigated and metallic behavior was observed down to 50 K.

  7. Improved adhesion of photoresist to III-V substrates using PECVD carbon films

    Science.gov (United States)

    Mancini, David P.; Smith, Steven M.; Hooper, Andrew F.; Talin, A.; Chang, Daniel; Resnick, Douglas J.; Voight, Steven A.

    2002-07-01

    Amorphous PECVD carbon films have been investigated as a means to prepare III-V compound semiconductor substrates for improved photoresist adhesion. Results show that significant improvements in adhesive durability of patterned photoresist occurred for carbon primed GaAs and InGaAs wafers used in conjunction with both i-line and DUV lithography processes. These carbon layers, were 50-100 Angstrom in thickness, and varied in composition and morphology from a nitrogen-doped, diamond-like material (DLC), to a more hydrogen rich, polymer-like material (PLC). Adhesion durability tests performed in baths of ammonium hydroxide (NH4OH) and hydrochloric acid (HCl) in general showed superior performance compared to non-primed substrates. The sole exception was a failure of PLC priming on GaAs wafers used with a DUV anti-reflective coating. This same system, however, was shown to work extremely well when a DLC coating was substituted. Characterization of PLC and DLC films included use of AES, XPS, FTIR, AFM, and contact angle analysis. Results indicate that carbon films passivate III-V oxides, creating a stable, hydrophobic surface. This factor is proposed as a key reason for the improved resistance to aggressive aqueous environments. AFM results show that carbon films are extremely smooth and actually decrease surface roughness, indicating that mechanical adhesion is unlikely.

  8. Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: Insitu tin doping by chemical bath deposition technique

    CSIR Research Space (South Africa)

    Wilson, KC

    2014-01-01

    Full Text Available We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA...

  9. Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems

    Energy Technology Data Exchange (ETDEWEB)

    Ricciardi, C.; Bennici, E.; Cocuzza, M.; Mandracci, P.; Bich, D.; Guglielmetti, V.; Barucca, G

    2003-03-03

    Large area (up to 4 inch) polycrystalline 3C-SiC films have been deposited by electron cyclotron resonance chemical vapor deposition technique. Crystalline and non-crystalline substrates such as (1 0 0) Si wafers, thermally oxidized Si wafers and Al{sub 2}O{sub 3} ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of transmission electron microscopy and X-ray diffractometry, while surface morphology was characterized by atomic force microscopy. Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems are reported.

  10. Deposition of cobalt and nickel sulfide thin films from thio- and alkylthio-urea complexes as precursors via the aerosol assisted chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mgabi, L.P.; Dladla, B.S. [Department of Chemistry, University of Zululand, Private bag X1001 KwaDlangezwa, 3880 (South Africa); Malik, M.A. [School of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Garje, Shivram S. [Department of Chemistry, University of Mumbai, Vidyanagari, Santacruz (East), Mumbai 400098 (India); Akhtar, J. [Nanoscience and Materials Synthesis Lab, Department of Physics, COMSATS, Institute of Information Technology (CIIT), Chak shahzad, Islamabad (Pakistan); Revaprasadu, N., E-mail: RevaprasaduN@unizulu.ac.za [Department of Chemistry, University of Zululand, Private bag X1001 KwaDlangezwa, 3880 (South Africa)

    2014-08-01

    We report the synthesis of Co(II) and Ni(II) thiourea and alkylthiourea complexes by reacting the metal salts (CoCl{sub 2} and NiCl{sub 2}) with the thiourea, phenylthiourea and dicyclohexylthiourea ligands in a 1:2 ratio. The complexes, [CoCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (I), [CoCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2} (II) and [CoCI{sub 2}(SC(NHC{sub 6}H{sub 11}){sub 2}){sub 2}] (III), [NiCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (IV), [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) and [NiCl{sub 2}(SC(NHC{sub 6}H{sub 11}){sub 2}){sub 2}] (VI) were characterized by C, H, N analysis and Fourier transform infrared spectroscopy. Thermogravimetric analysis shows that all complexes undergo a two step decomposition process except for [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) which decomposes in a single step. The complexes were used as single-source precursors for the deposition of cobalt sulfide and nickel sulfide thin films by aerosol assisted chemical vapor deposition at temperatures between 350 an 500 °C. The crystallinity of the films was determined by X-ray diffraction and their morphology was determined by scanning electron microscopy. The morphology of the cobalt sulfide thin films varies from randomly oriented platelets, to granulated spheres and cubes as the precursor and deposition conditions are changed. For nickel sulfide, the [NiCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (IV) complex gave rods whereas the [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) produced spherical particles. - Highlights: • We report the synthesis of Co(II) and Ni(II) thiourea and alkylthiourea complexes. • C, H, N analysis and Fourier transform infrared spectroscopy characterization • NiS and CoS thin films deposited by aerosol assisted chemical vapor deposition • X-ray diffraction characterization of the phase of the films • Film morphology determined by scanning electron microscopy.

  11. Physical aspects of the pulsed laser deposition technique: The stoichiometric transfer of material from target to film

    DEFF Research Database (Denmark)

    Schou, Jørgen

    2009-01-01

    The physical processes of pulsed laser deposition (PLD) change strongly from the initial light absorption in a target to the final deposition and growth of a film. One of the primary advantages of PLD is the stoichiometric transfer of material from target to a film on a substrate. Even for a stoi...

  12. Optical Emission Spectroscopy in PECVD Helps Modulate Key Features in Biofunctional Coatings for Medical Implants

    Science.gov (United States)

    Santos, Miguel; Michael, Praveesuda; Filipe, Elysse; Wise, Steven; Bilek, Marcela; University of Sydney Collaboration

    2015-09-01

    We explore the use of optical emission spectroscopy (OES) diagnostic tools as a process feedback control strategy in plasma-assisted deposition of biofunctional coatings. Hydrogenated carbon nitride coatings are deposited on medical-grade metallic substrates using radio-frequency (rf) discharges sustained in C2H2/N2/Ar gaseous mixtures. The discharge is generated by capacitively coupling the rf power (supplied at f = 13.56 MHz) to the plasma and the substrates are electrically biased using a pulse generator to provide microsecond square profiled pulses at voltages in the range |Vbias| = 250 V - 1000 V. Nitrogen content and CN bonding configurations in the coatings follow similar trends to those of CN radicals and nitrogen molecular ions in the discharge. OES is used as a non-intrusive diagnostic technique to identify a suitable window of process parameters and ultimately achieve biofunctional interfaces compatible with current clinical demands. Importantly, we demonstrate that key features of the coatings can be modulated and made suitable for blood and/or tissue contacting medical implants, such as coronary stents and orthopaedic implants. The coatings are mechanically robust, inherently non-thrombogenic and can be readily modified, enabling an easy functionalization through the immobilization of biological molecules in a bioactive conformation.

  13. Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer

    Science.gov (United States)

    Tang, W.; Meng, B.; Su, W.; Zhang, H. X.

    2012-09-01

    This paper describes the study of the conventional silicon/glass anodic bonding with plasma enhanced chemical vapor deposited silicon carbide (PE-SiC) as the intermediate layer, in order to evaluate the feasibilities of applying PE-SiC as the device's passivation layer prior to the packaging bonding and construction layer based on the bond-and-transfer technique. It is found that the mechanism of this bonding is similar to the traditional anodic bonding. As the PE-SiC thickened, the bond strength declined; meanwhile, the leak rate remained at the same level with the silicon/glass bonding. Further experiments revealed that the bonding increased the interlayer's tensile stress by 70.7 MPa and diminished the stress gradient by 24.6 MPa µm-1.

  14. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  15. Widespread calcium deposits, as detected using the alizarin red S technique, in the nervous system of rats treated with dimethyl mercury.

    Science.gov (United States)

    Mori, F; Tanji, K; Wakabayashi, K

    2000-09-01

    It has been reported that the alizarin red S technique may be used to visualize both intracellular and extracellular calcium deposits. Using this method histologic observations of the nervous system were made in rats that were given dimethyl mercury at 5 mg/kg per day for 12 consecutive days, and killed on days 1, 4, 7, 10, 12, 24, 32, 49, 100 and 140 (day 0 was the day that the final dose was administered). Neuronal degeneration with calcium deposition was found in the nervous system from day 4 onward. In the cerebellum alizarin red S-positive granules became gradually larger with time after dimethyl mercury administration, and large calcospherites were observed from day 32 onward. In contrast, the visualization of calcium deposits in the cerebral cortex was restricted to days 10-12. Calcium deposits were found in the ascending axons of the dorsal root ganglion neurons (dorsal fascicles of the spinal cord), but not in their perikarya. These findings suggest that widespread calcium deposition could occur in the nervous system following dimethyl mercury exposure, and that in the rat the mechanism of calcium deposition differs depending upon the brain region.

  16. Effect of substrate bias in nitrogen incorporated amorphous carbon films with embedded nanoparticles deposited by filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Amorphous and Microcrystalline Silicon Solar Cell Group, Physics of Energy Harvesting Division, National Physical Laboratory (C.S.I.R.), Dr. K.S. Krishnan Road, New Delhi-110012 (India); Kumar, Sushil; Ishpal,; Srivastava, A.K.; Chouksey, Abhilasha; Tripathi, R.K.; Basu, A. [Amorphous and Microcrystalline Silicon Solar Cell Group, Physics of Energy Harvesting Division, National Physical Laboratory (C.S.I.R.), Dr. K.S. Krishnan Road, New Delhi-110012 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer a-C: N films having nanoparticles were deposited by filtered cathodic jet carbon arc (FCJCA) technique. Black-Right-Pointing-Pointer The effect of negative substrate bias on the properties of a-C: N films embedded with nanoparticles have been studied. Black-Right-Pointing-Pointer The properties of a-C: N films deposited by FCJCA technique have been compared with ta-C: N films deposited by FCVA process. - Abstract: The properties of nitrogen incorporated amorphous carbon (a-C: N) films with embedded nanoparticles, deposited using a filtered cathodic jet carbon arc technique, are reported. X-ray diffraction, high resolution transmission electron microscope and Raman spectroscopy measurements reveal an amorphous structure, but on closer examination the presence of clusters of nanocarbon single crystals with d-spacing close to diamond cubic-phase have also been identified. The effect of substrate bias on the microstructure, conductivity, activation energy, optical band gap, optical constants, residual stress, hardness, elastic modulus, plastic index parameter, percentage elastic recovery and density of states of a-C: N films have been studied and the properties obtained are found to depend on the substrate bias.

  17. In situ structural study on underpotential deposition of Ag on Au(111) electrode using surface X-ray scattering technique

    OpenAIRE

    KONDO, Toshihiro; Morita, Jun; Okamura, Masayuki; Saito, Toshiya; Uosaki, Kohei

    2002-01-01

    In situ surface X-ray scattering (SXS) measurements were carried out to study the structure of a Ag layer on a Au(111) electrode formed by underpotential deposition (upd) in sulfuric acid solution. Specular rod profiles showed that a monolayer of Ag was formed at a potential between the second and third upd peaks, and a bilayer of Ag was formed at a potential between the third upd peak and bulk deposition. Non-specular rod profiles demonstrated that electrochemically deposited Ag atoms both i...

  18. The life-cycle environmental impacts of etching silicon wafers and (PE)CVD chamber cleaning

    Energy Technology Data Exchange (ETDEWEB)

    Schottler, M. [M and W Zander FE, Stuttgart (Germany); De Wild-Scholten, M.J. [ECN Solar Energy, Petten (Netherlands)

    2008-09-15

    Fluorinated gases are used by the semiconductor and photovoltaic industry for etching silicon wafers and (PE)CVD chamber cleaning. The desired result is due to F atoms and other reactive species, but the emission of the undecomposed PFC (perfluorinated) gases is unwanted because they have a high global warming effect and high atmospheric life-time. In this study a full life-cycle assessment is used in order to (1) compare the environmental impacts of the different technologies and (2) to indicate improvement options. The steps in the life cycle are the following: synthesis of the compounds, transportation, distribution in the fab (connection of cylinders), use in the process, abatement to destroy the unreacted gases and take-back of cylinders. Emissions from each step can be direct (from emission of the fluorinated gases) or indirect (from energy use). Results, partly based on best guesses, indicate that fugitive emissions of the fluorinated gases during synthesis, downtime of abatement system and cleaning of the not completely empty cylinders dominate the life-cycle global warming effect. This means that the global warming effect of the gas itself determines the effect being the highest for SF6. F2 turns out to be clearly in advantage over the other fluorinated compounds because it has a global warming potential of zero with moderate efforts for synthesis. Possible improvement options to minimize the use and emission of fluorinated gas are (1) strict procedure for connection of cylinders, (2) complete usage or reliable abatement of the gas from the bottle, (3) the recovery or reliable abatement of unused gases from the process and (4) end-point detection of the process.

  19. Structural and kinetic studies of metal hydride hydrogen storage materials using thin film deposition and characterization techniques

    Science.gov (United States)

    Kelly, Stephen Thomas

    Hydrogen makes an attractive energy carrier for many reasons. It is an abundant chemical fuel that can be produced from a wide variety of sources and stored for very long periods of time. When used in a fuel cell, hydrogen emits only water at the point of use, making it very attractive for mobile applications such as in an automobile. Metal hydrides are promising candidates for on-board reversible hydrogen storage in mobile applications due to their very high volumetric storage capacities---in most cases exceeding even that of liquid hydrogen. The United States Department of Energy (DOE) has set fuel system targets for an automotive hydrogen storage system, but as of yet no single material meets all the requirements. In particular, slow reaction kinetics and/or inappropriate thermodynamics plague many metal hydride hydrogen storage materials. In order to engineer a practical material that meets the DOE targets, we need a detailed understanding of the kinetic and thermodynamic properties of these materials during the phase change. In this work I employed sputter deposited thin films as a platform to study materials with highly controlled chemistry, microstructure and catalyst placement using thin film characterization techniques such as in situ x-ray diffraction (XRD) and neutron reflectivity. I observed kinetic limitations in the destabilized Mg2Si system due to the slow diffusion of the host Mg and Si atoms while forming separate MgH2 and Si phases. Conversely, I observed that the presence of Al in the Mg/Al system inhibits hydrogen diffusion while the host Mg and Al atoms interdiffuse readily, allowing the material to fall into a kinetic and/or thermodynamic trap by forming intermetallic compounds such as Mg17Al 12. By using in situ XRD to analyze epitaxial Mg films grown on (001) oriented Al2O3 substrates I observed hydride growth consistent with a model of a planar hydride layer growing into an existing metal layer. Subsequent film cycling changes the hydrogen

  20. Source investigation of the tar balls deposited along the Gujarat coast, India, using chemical fingerprinting and transport modeling techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Suneel, V.; Vethamony, P.; Naik, B.G.; VinodKumar, K.; Sreenu, L.; Samiksha, S.V.; Tai,Y.; Sudheesh, K.

    Deposition of tar balls (TBs) along the south Gujarat coast, situated on the west coast of India (WCI), commonly occurs during the southwest monsoon season. Several offshore oil fields off the Mumbai-Gujarat coast, and refineries along the coast...

  1. Characterization of 2004 Indian Ocean tsunami induced deposits along the Chennai coast using magnetic and geochemical techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Veerasingam, S.; Venkatachalapathy, R.

    measurements, as a proxy tool to identify tsunami induced deposits in the core sediments from the Chennai coast, India Down core profiles of mass specific magnetic susceptibility (x variable), x variable ARM and SIRM are similar in all sediment cores...

  2. Electrodeposition of zinc-cobalt alloys. Tapping mode AFM technique applied to study the initial stages of deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gomez, E.; Valles, E.; Gorostiza, P.; Servat, J.; Sanz, F. [Univ. de Barcelona (Spain). Dept. de Quimica Fisica

    1995-12-01

    The first stages of electrodeposition of zinc-cobalt alloys on highly oriented pyro-graphite are studied by tapping mode atomic force microscopy (AFM), scanning electron microscopy, and electrochemical analysis. Low Zn(II)/Co(II) ratio (1/9) solutions are selected for this study. Potentiostatic deposition begins through the formation of randomly distributed zinc-rich nuclei on the surface, showing exclusion areas around the larger nuclei and preferential nucleation at the kink sites. At long deposition times an incipient dendritic growth, related to the initiation of pure cobalt deposition is observed. A simple AFM tip deconvolution model is used to obtain the actual dimensions of both the tip itself and the deposited nuclei. The nuclei growth mechanism observes lateral diffusion and aggregation and the formation of emerging nuclei on top of yet consolidated nuclei.

  3. Diamond-like carbon films deposited on three-dimensional shape substrate model by liquid electrochemical technique

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.Y. [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Zhang, G.F. [School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian China (China); Zhao, Y.; Liu, D.D. [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Cong, Y., E-mail: congyan@ciomp.ac.cn [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Buck, V. [Thin Film Technology Group, Faculty of Physics, University Duisburg-Essen and CeNIDE, 47057 Duisburg (Germany)

    2015-09-01

    Diamond-like carbon (DLC) films were deposited on three-dimensional (3D) shape substrate model by electrolysis of 2-propanol solution at low temperature (60 °C). This 3D shape model was composed of a horizontally aligned stainless steel wafer and vertically aligned stainless steel rods. Morphology and microstructure of the films were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy, respectively. The results suggested there were only differences in film uniformity and thickness for two kinds of samples. The hydrogenated amorphous carbon films deposited on horizontally aligned substrate were smooth and homogeneous. And the film thickness of DLC films gained on the vertical substrates decreased along vertical direction. It is believed that bubble formation could enhance nucleation on the wetted capillary area. This experiment shows that deposition of DLC films by liquid phase deposition on 3D shape conductive substrates is possible. - Highlights: • DLC film is expected to be deposited on complex surface/shape substrate. • DLC film is deposited on 3D shape substrate by liquid electrochemical method. • Horizontal substrate is covered by smooth and homogeneous DLC films. • Film thickness decreases along vertical direction due to boiling effect.

  4. Nitrogen doping for adhesion improvement of DLC film deposited on Si substrate by Filtered Cathodic Vacuum Arc (FCVA) technique

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Supsermpol, B.; Saenphinit, N. [Western Digital Company, Ayutthaya 13160 (Thailand); Aramwit, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50202 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50202 (Thailand)

    2014-08-15

    Diamond-like carbon (DLC) films have been used in many applications due to their attractive combination of properties including chemical inertness, corrosion protection, biocompatibility, high hardness, and low wear rates. However, they still have some limitations such as high internal stresses and low toughness which lead to poor adhesion of films. Synthesis of nitrogen-doped DLC (N-DLC) offers the possibility of overcoming these limitations. In this study, DLC films, namely tetrahedral amorphous carbon (ta-C) and nitrogen doped tetrahedral amorphous carbon (ta-C:N) were deposited on single crystalline Si wafer substrates using the Filtered Cathodic Vacuum Arc (FCVA) technique. Film characterizations were carried out by Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), triboindenter tester and nano-scratch tester. Measurement results showed that intentionally doping with nitrogen reduced the carbon sp{sup 3} content and increased the surface roughness in comparison with that of pure ta-C films. The hardness measurement confirmed the Raman and AFM analyses that adding nitrogen in ta-C films decreased the hardness, especially with high nitrogen content. However, the nano-scratch test revealed the increasing of the critical load with nitrogen. This work, then, extended its scope to investigate the properties of double-layer ta-C films which were composed of ta-C:N interlayer of various thickness around 10–30 nm and ta-C top-layer with thickness of around 80 nm. Microstructure characterization demonstrated that a ta-C:N interlayer gradually decreased the sp{sup 3} fraction in the films and increased film roughness whenever the ta-C:N interlayer thickness increased. In this structure, the tribological property in terms of adhesion to the Si substrate was significantly improved by about 20–90%, but the mechanical property in terms of hardness was gradually degraded by about 2–10%, compared to pure ta-C film, when the ta

  5. Growth and characterization of tin disulfide (SnS{sub 2}) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N.G. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Sagade, A.A. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Gudage, Y.G. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Lokhande, C.D. [Thin film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)]. E-mail: ramphalsharma@yahoo.com

    2007-06-14

    Thin films of tin disulfide (SnS{sub 2}) have been deposited by using low cost successive ionic layer adsorption and reaction (SILAR) technique. The deposition parameters such as SILAR cycles (60), immersion time (20 s), rinsing time (10 s) and deposition temperature (27 {sup o}C) were optimized to obtain good quality of films. Physical investigations were made to study the structural, optical and electrical properties. X-ray diffraction (XRD) patterns reveal that the deposited SnS{sub 2} thin films have hexagonal crystal structure. Energy dispersive X-ray analysis (EDAX) indicated elemental ratio close to those for tin disulfide (SnS{sub (2.02)}). Uniform deposition of the material over the entire glass substrate was revealed by scanning electron microscopy (SEM). Atomic force microscopy (AFM) showed the film is uniform and the substrate surface is well covered with small spherical grains merged in each other. A direct band gap of 2.22 eV was obtained. Photoluminescence (PL) showed two strong peaks corresponding to green and red emission. Ag/SnS{sub 2} junction showed Schottky diode like I-V characteristics. The barrier height calculated was 0.22 eV. Thermoelectric power (TEP) properties showed that tin disulfide exhibits n-type conductivity.

  6. Enhanced performance of CdS/CdTe thin-film devices through temperature profiling techniques applied to close-spaced sublimation deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiaonan Li; Sheldon, P.; Moutinho, H.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe a methodology developed and applied to the close-spaced sublimation technique for thin-film CdTe deposition. The developed temperature profiles consisted of three discrete temperature segments, which the authors called the nucleation, plugging, and annealing temperatures. They have demonstrated that these temperature profiles can be used to grow large-grain material, plug pinholes, and improve CdS/CdTe photovoltaic device performance by about 15%. The improved material and device properties have been obtained while maintaining deposition temperatures compatible with commercially available substrates. This temperature profiling technique can be easily applied to a manufacturing environment by adjusting the temperature as a function of substrate position instead of time.

  7. Characterization of Pd catalyst-electrodes deposited on YSZ: Influence of the preparation technique and the presence of a ceria interlayer

    Science.gov (United States)

    Jiménez-Borja, Carmen; Matei, Florina; Dorado, Fernando; Valverde, José Luis

    2012-11-01

    Palladium catalyst-electrodes supported on Y2O3-stabilized-ZrO2 (YSZ) prepared either by paste deposition or wet impregnation technique were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was found a strong dependence of the catalytic film preparation technique as well as of the presence of a ceria interlayer between the palladium film and the solid electrolyte on the catalytic activity towards methane oxidation. Impregnated palladium films were found to be more active than films prepared by paste deposition. Besides, the addition of ceria allowed stabilizing the palladium active phase for methane oxidation.

  8. Catalytic Carbon Submicron Fabrication Using Home-Built Very-High Frequency Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Sukirno

    2008-09-01

    Full Text Available In this research, carbon nanotubes (CNT fabrication is attempted by using existing home-made Plasma Enhanced Chemical Vapour Deposition (PECVD system. The fabrication is a catalytic growth process, which Fe catalyst thin film is grown on the Silicon substrate by using dc-Unbalanced Magnetron Sputtering method. By using methane (CH4 as the source of carbon and diluted silane (SiH4 in hydrogen as the source of hydrogen with 10:1 ratio, CNT fabrications have been attempted by using Very High Frequency PECVD (VHF-PECVD method. The fabrication processes are done at relatively low temperature, 250oC, but with higher operated plasma frequency, 70 MHz. Recently, it is also been attempted a fabrication process with only single gas source, but using one of the modification of the VHF-PECVD system, which is by adding hot-wire component. The attempt was done in higher growth temperature, 400oC. Morphological characterizations, by using Scanning Electron Micrograph (SEM and Scanning Probe Microscopy (SPM, as well as the composition characterization, by using Energy Dispersion Analysis by X-Ray (EDAX, show convincing results that there are some signatures of CNT present.

  9. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  10. Development and application of a green-chemistry solution deposition technique for buffer layer coating on cube-textured metal substrates in view of further deposition of rare-earth based superconductors

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P

    , allowing the epitaxial growth of the superconducting layer. State-of-the-art coated conductor hetero structures are mainly based on CeO2 based buffer stacks that consist of a sequence of several different buffer layers. Buffer layers deposited by continuous chemical deposition techniques, which...... and hazardous chemicals such as 2-methoxyethanol, and trifluroacetic acid (TFA). Therefore, in our research the main focus was on the development of SrTiO3 single buffer layers based on environmentally safe chemicals, to reach the engineering requirements for continuous coating of long substrate tapes. A new......Superconductor based energy production has been thoroughly researched by many scientists all over the world, due to the advantage of zero electric resistance that will contribute to the energy saving capabilities. Recently successful developments have been reported in coated conductor architectures...

  11. Fabrication of ZnO nanoparticles-embedded hydrogenated diamond-like carbon films by electrochemical deposition technique

    Institute of Scientific and Technical Information of China (English)

    Zhang Pei-Zeng; Li Rui-Shan; Pan Xiao-Jun; Xie Er-Qing

    2013-01-01

    ZnO nanoparticles-embedded hydrogenated diamond-like carbon (ZnO-DLC) films have been prepared by electrochemical deposition in ambient conditions.The morphology,composition,and microstructure of the films have been investigated.The results show that the resultant films are hydrogenated diamond-like carbon films embedded with ZnO nanoparticles in wurtzite structure,and the content and size of the ZnO nanoparticles increase with increasing deposition voltage,which are confirmed by X-ray photoelectron spectroscopy (XPS),Raman,and transmission electron microscope (TEM).Furthermore,a possible mechanism used to describe the growth process of ZnO-DLC films by electrochemical deposition is also discussed.

  12. Manipulating microstructures and electrical properties of carbon fiber/reduced graphene oxide/nickel composite textiles with electrochemical deposition techniques

    Science.gov (United States)

    Cheng, Wei-Liang; Zhao, Quan-Liang; Shi, Fei

    2017-04-01

    Since graphene and their composites play significant roles in the catalysts, energy storage, electronics and other fields, where electron transport is highly critical, here, we introduce reduced graphene oxide (RGO) interfaces in the carbon fiber (CF) networks for preparing a novel lightweight carbon fiber/reduced graphene oxide/nickel (CF-RGO-Ni) composite textile. Upon the charaterizations on the microscopic morphologies, electrical and magnetic properties, and density, the presence of RGO nanosheets and nickel nanoparticles would substantially influence the related physical properties in the resulting composite textiles. Furthermore, the key parameters, including RGO loading, deposition time, current density and annealing temperature of carbon matrices, have been studied to understand their effects on the electrochemical deposition of nickel nanoparticles. Implication of the results suggests that the RGO interface is a unique medium for essentially promoting the electrochemical deposition kinetics and active sites for growing nickel nanoparticles, which indicates a universal approach for preparing advanced lightweight composites with the presence of graphene naonstructures.

  13. Synthesis, structural and field emission properties of multiwall carbon nanotube-graphene-like nanocarbon hybrid films grown by microwave plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chockalingam, Sreekumar, E-mail: sreekuc@nplindia.org [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Bisht, Atul [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Kesarwani, A.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Singh, B.P. [Physics and Engineering of Carbon, Materials Physics and Engineering Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Chand, Jagdish [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Singh, V.N. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

    2015-04-15

    Multiwall carbon nanotube (MWCNT)-graphene-like nanocarbon hybrid films were directly deposited on nickel substrate without any pre-treatment in a single-step by microwave plasma enhanced chemical vapor deposition (MW PECVD) technique at 600 °C. The effects of hydrogen partial pressure on the growth of MWCNT-graphene-like nanocarbon hybrid films and their structural, morphological and field emission properties were investigated. High resolution scanning electron microscope revealed MWCNT structure. High resolution transmission electron microscope images and Raman spectra revealed graphene-like nanocarbon film. Raman spectra showed 2D, G, D and D + G peaks at approximately 2690, 1590, 1350 and 2930 cm{sup −1}, respectively. The minimum threshold field for electron emission was found to be 3.6 V/μm corresponding to 1 μA/cm{sup 2} current density for the MWCNT-graphene-like nanocarbon hybrid film deposited at 20 Torr pressure whereas the maximum current density of 0.12 mA/cm{sup 2} and field enhancement factor of ∼3356 was obtained for the sample deposited at 5 Torr pressure. - Highlights: • MWCNT-graphene-like nanocarbon hybrid films were synthesized by MWPECVD technique. • Effect of pressure on the structural and field emission properties has been studied. • FESEM revealed MWCNT and HRTEM revealed graphene-like nanocarbon film structure. • Minimum E{sub T} = 3.6 V/μm with β = 3164 has been obtained in the film deposited at 20 Torr. • Maximum J = 0.12 mA/cm{sup 2} with β = 3356 has been obtained in the film deposited at 5 Torr.

  14. Effects of deposition methods and processing techniques on band gap, interband electronic transitions, and optical absorption in perovskite CH3NH3PbI3 films

    Science.gov (United States)

    Li, Wenwu; Sha, Tingting; Wang, Yan; Yu, Wenlei; Jiang, Kai; Zhou, Hang; Liu, Chuan; Hu, Zhigao; Chu, Junhao

    2017-07-01

    Despite intensive studies on the improvements of conversion efficiencies in solar cells, many questions regarding the effects of deposition techniques on optical properties and electronic band structures of CH3NH3PbI3 (MAPbI3) remain unresolved. Here, perovskite MAPbI3 films were prepared using different deposition methods and processing techniques. The effects of deposition and processing parameters on dielectric functions and optical absorption were investigated by fitting the reflectance spectra in the photon energy range of 0.5-5.16 eV. It is found that the bandgap (Eg) of the films deposited by two-step spinning (1.591 eV) is larger than that prepared by evaporations (1.514 eV), due to different Pb-I orbital hybridization and spin-orbit coupling. Moreover, the Eg value of the films increases from 1.543 eV to 1.591 eV after toluene solution dripping. Five interband electronic transitions ( Ep 1, Ep 2, Ep 3, Ep 4 , and Ep 5 ) are observed, and the origins of Ep 2, Ep 3 , and Ep 4 are assigned to the direct transitions between the highest valence band and the lowest lying conduction band at the R, M, and X symmetry points. Further, the transition energies of the films deposited by evaporation are less than those prepared by two-step spinning. The present results shed light on preparing more reliable and reproducible high performance MAPbI3-based solar cells.

  15. Simultaneous Counter-Ion Co-Deposition a Technique Enabling Matrix Isolation Spectroscopy Studies Using Low-Energy Beams of Mass-Selected Ions

    Science.gov (United States)

    Ludwig, Ryan M.; Moore, David T.

    2014-06-01

    Matrix isolation spectroscopy was first developed in Pimentel's group during the 1950's to facilitate spectroscopic studies of transient species. Cryogenic matrices of condensed rare gases provide an inert chemical environment with facile energy dissipation and are transparent at all wavelengths longer than vacuum UV, making them ideal for studying labile and reactive species such as radicals, weakly bound complexes, and ions. Since frozen rare gases are poor electrolytes, studies of ions require near-equal populations of anions and cations in order to stabilize the number densities required for spectroscopic experiments. Many techniques for generation of ions for using in matrix isolation studies satisfy this criterion intrinsically, however when ion beams generated in external sources are deposited, the counter-ions typically arise via secondary processes that are at best loosely controlled. It has long been recognized that it would be desirable to stabilize deposition of mass-selected ions generated in an external source using simultaneous co-deposition of a beam of counter-ions, however previous attempts to achieve this have been reported as unsuccessful. The Moore group at Lehigh has demonstrated successful experiments of this type, using mass-selected anions generated from a metal cluster source, co-deposited with a balanced current of cations generated in a separate electron ionization source. This talk will focus on the details of the technique, and present some results from proof-of-concept studies on anionic copper carbonyl complexes formed in argon matrices following co-deposition of Cu- with Ar+ or Kr+. Funding support from NSF CAREER Award CHE-0955637 is gratefully acknowledged. Whittle et al., J. Chem. Phys. 22, p.1943 (1954); Becker et al., J. Chem. Phys. 25, p.224 (1956). Godbout et al., J. Chem. Phys. 96, p.2892 (1996). Sabo et al., Appl. Spectrosc. 45, p. 535 (1991).

  16. Synthesis of Si/SiO2/ZnO nanoporous materials using chemical and electrochemical deposition techniques

    Science.gov (United States)

    Dauletbekova, A. K.; Alzhanova, A. Ye.; Akilbekov, A. T.; Mashentseva, A. A.; Zdorovets, M. V.; Balabekov, K. N.

    2016-09-01

    The work represents the results of forming Zn-based nanoprecipitates in nanoporous amorphous silicon dioxide on silicon substrate by the template synthesis method. SEM and AFM images of the surface after chemical and electrochemical deposition of zinc were obtained. The analysis of photoluminescence of the precipitated samples resulted in the assumption of formation of nanoclusters of zinc oxide.

  17. Effect of deposition conditions on the physical properties of SnxSy thin films prepared by the spray pyrolysis technique

    Institute of Scientific and Technical Information of China (English)

    M. R. Fadavieslam; N. Shahtahmasebi; M. Rezaee-Roknabadi; M. M. Bagheri-Mohagheghi

    2011-01-01

    Tin sulfide thin films (SnxSy ) with an atomic ratio of y / x =0.5 have been deposited on a glass substrate by spray pyrolysis.The effects of deposition parameters,such as spray solution rate (R),substrate temperature (Ts) and film thickness (t),on the structural,optical,thermo-electrical and photoconductivity related properties of the films have been studied.The precursor solution was prepared by dissolving tin chloride (SnCl4,5H2O)and thiourea in propanol,and SnxSy thin film was prepared with a mole ratio of y/x =0.5.The prepared films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM) and UV-vis spectroscopy.It is indicated that the XRD patterns of SnxSy films have amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm.The optical gap of SnxSy thin films is determined to be about 2.41 to 3.08 eV by a plot of the variation of (ohv)2 versus hv related to the change of deposition conditions.The thermoelectric and photo-conductivity measurement results for the films show that these properties are depend considerably on the deposition parameters.

  18. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    López, G., E-mail: gema.lopez@upc.edu; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    Highlights: • We use laser doping technique to create highly-doped regions. • Dielectric layers are used as both passivating layer and dopant source. • The high quality of the junctions makes laser doping technique using dielectric layers as dopant source suitable for solar cells applications. - Abstract: In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC{sub x}/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al{sub 2}O{sub 3}) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J–V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  19. Fabrication of Ag:TiO2 Nanocomposite Thin Films by Sol-Gel Followed by Electron Beam Physical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Manish Kumar

    2013-01-01

    Full Text Available Ag:TiO2 nanocomposite films have been synthesized by sol-gel method followed by electron beam physical vapour deposition. Targets for this deposition were prepared by a hydraulic press using a powder containing Ag and TiO2 prepared by sol-gel technique. Microstructure, surface, and plasmonic properties of nanocomposite films were studied using glancing angle X-ray diffractometer, atomic force microscopy, field emission secondary electron microscopy, and UV-Vis spectroscopy. Microstructural study reveals that Ag nanoparticles are embedded in TiO2 matrix consisting of mixed phases of anatase and rutile. Size estimation using Scherrer formula reveals that average crystallite size of Ag nanoparticles is 23 nm. Surface morphological studies indicate that deposited films are uniform and intact to the substrate and have very low value of root mean square roughness. Optical studies exhibit a surface plasmon resonance induced absorption band in visible region, which is the characteristic feature of Ag nanoparticles. The intensity of this absorption band is found to increase with the increase in deposition time. Multiple peaks observed in absorption band were explained using the concepts of extended Mie scattering. Preliminary experiments also suggested that these nanocomposite films exhibit promising photocatalytic properties, which can be used for water treatment.

  20. Synthesis of nanocrystalline TiO2 thin films by liquid phase deposition technique and its application for photocatalytic degradation studies

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed

    2008-02-01

    A transparent, high purity titanium dioxide thin film composed of densely packed nanometer sized grains has been successfully deposited on a glass substrate at 30°C from an aqueous solution of TiO2–HF with the addition of boric acid as a scavenger by liquid phase deposition technique. From X-ray diffraction measurement, the deposited film was found to be amorphous and turns crystalline at 500°C. The deposited film showed excellent adherence to the substrate and was characterized by homogeneous flat surface. TiO2 thin films can be used as a photocatalyst to clean up organohalides, a class of compound in pesticides that pollute the ground water. Photocatalytic degradation experiments show that indanthrene golden orange dye undergoes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to ultraviolet light. The suitable surface structure and porosity increases the photocatalytic activity. It was also observed that hemin doped TiO2 thin films break up organohalides at a surprisingly high rate under visible light.

  1. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  2. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xunming [University of Toledo; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  3. Characterization of Pd catalyst-electrodes deposited on YSZ: Influence of the preparation technique and the presence of a ceria interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Borja, Carmen, E-mail: Carmen.JBorja@uclm.es [Departamento de Ingenieria Quimica, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha. Avenida Camilo Jose Cela 12, 13071 Ciudad Real (Spain); Matei, Florina [Department of Petroleum Processing Engineering and Environmental Protection, Petroleum - Gas University of Ploiesti (Romania); Dorado, Fernando; Valverde, Jose Luis [Departamento de Ingenieria Quimica, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha. Avenida Camilo Jose Cela 12, 13071 Ciudad Real (Spain)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Impregnation of palladium over YSZ led to more dispersed films. Black-Right-Pointing-Pointer XPS spectra indicated electron deficient Pd{sup 2+} species on the surface of palladium films. Black-Right-Pointing-Pointer Impregnated palladium films were more active than those prepared by paste deposition Black-Right-Pointing-Pointer The addition of a CeO{sub 2} interlayer enhanced the catalytic rate for the impregnated samples. - Abstract: Palladium catalyst-electrodes supported on Y{sub 2}O{sub 3}-stabilized-ZrO{sub 2} (YSZ) prepared either by paste deposition or wet impregnation technique were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was found a strong dependence of the catalytic film preparation technique as well as of the presence of a ceria interlayer between the palladium film and the solid electrolyte on the catalytic activity towards methane oxidation. Impregnated palladium films were found to be more active than films prepared by paste deposition. Besides, the addition of ceria allowed stabilizing the palladium active phase for methane oxidation.

  4. High deposition rate a-Si:H layers from pure SiH4 and from a 10% dilution of SiH4 in H2

    OpenAIRE

    1999-01-01

    In this paper, we present results of the deposition rates and the characterization of a-Si:H layers deposited from pure SiH4 in a 13.56 MHz Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, where the use of parallel plates of equal area, long gas residence as well as the optimization of process parameters permitted to double previously reported deposition rates obtained employing this rf frequency and gas. A deposition process using a 10% dilution of SiH4 in H2.was also optimized t...

  5. Tin sulfide (SnS) nanostructured films deposited by continuous spray pyrolysis (CoSP) technique for dye-sensitized solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Firoz; Dutta, Viresh, E-mail: vdutta@ces.iitd.ac.in

    2015-12-15

    Highlights: • Single phase, perfectly stoichiometric tin sulfide (SnS) films have been deposited by continuous spray pyrolysis technique. • Structural and morphological investigations show the orthorhombic SnS with nanoflakes. • SnS film shows excellent electrochemical stability. • SnS films have been used as a counter electrode (CE) in an I{sub 3}{sup −}/I{sup −} based dye-sensitized solar cells. - Abstract: Tin sulfide (SnS) nanostructured films have been deposited on transparent conducting glass substrate using continuous spray pyrolysis (CoSP) technique using aqueous spray solution of tin chloride and thiourea. Structural, morphological and optical properties of as-synthesized SnS nanostructured films showed the formation of (1 0 1) oriented orthorhombic SnS with nanoflakes having a direct band gap of 1.40 eV. X-ray photoelectron spectroscopy (XPS) analysis confirms the formation of pure SnS with Sn in +2 oxidation state. The SnS nanostructured film has also been characterized using Brunauer–Emmett–Teller (BET) technique to determine the surface area and pore volume which are found to be 11.4 m{sup 2}/g and 0.02 cm{sup 2}/g, respectively. The film has been used as a counter electrode (CE) in a triiodide/iodide (I{sub 3}{sup −}/I{sup −}) based dye-sensitized solar cells (DSSCs). The DSSCs of 0.25 cm{sup 2} area with SnS nanostructured CE exhibits a lower power conversion efficiency (2.0 ± 0.06%) than that for the cell with standard platinum (Pt) CE (4.5 ± 0.13%). However, the usefulness of the CoSP technique for deposition of nanostructures SnS CE film has been established in the present study.

  6. Co-assembly of functional graphene and multiwall carbon nanotubes for supercapacitors by a vertical deposition technique

    Science.gov (United States)

    Zhang, Yanhong; Cao, Xiaojian; Li, Zhenwei; Zhao, Dongmei

    2016-06-01

    Graphene and carbon nanotubes (CNTs) are nanosized carbon materials with large specific surface areas, outstanding electrical conductivities, excellent mechanical properties, and other remarkable characteristics. Preparation of graphene oxide is by a redox method, followed by vertical deposition to prepare graphene oxide/carbon nanotube GO/CNT) composites. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to characterize the morphology and microstructure of the materials. Electrodes were made by deposition of graphene oxide/carbon nanotube composites on an indium tin oxide glass slide, and its electrical properties were characterized by cyclic voltammetry. The GO/CNT composites exhibit excellent energy and power densities and are ideal materials for the preparation of supercapacitor electrodes.

  7. Preparation and characterization of ultra-thin films containing Au and Ag nanoparticles using layer-by-layer deposition technique

    OpenAIRE

    Cönger, Can Pınar

    2009-01-01

    Ankara : The Department of Chemistry and the Institute of Engineering and Sciences of Bilkent University, 2009. Thesis (Master's) -- Bilkent University, 2009. Includes bibliographical references leaves 69-77. The main objective of this thesis is to investigate the layer-by-layer deposited polyelectrolyte and polyelectrolyte/metal nanoparticle films by using X-ray Photoelectron (XPS) and Optical Spectroscopy (UV-Vis). Within this purpose, in the first part of the study, laye...

  8. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  9. Effect of Reaction Temperature and Time on the Structural Properties of Cu(In,Ga)Se2 Thin Films Deposited by Sequential Elemental Layer Technique

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Thin films of copper indium gallium selenide Cu(In,Ga)Se2 (CIGS) were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction (XRD) technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes: <450℃, 450-950℃, and >950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.

  10. Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    Mitsuoki Hishida

    2016-01-01

    Full Text Available Stopping the plasma-enhanced chemical vapor deposition (PECVD once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points, compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

  11. Investigations on alluvial deposits through borehole stratigraphy, radiocarbon dating and passive seismic technique (Carnic Alps, NE Italy)

    Science.gov (United States)

    Viero, Alessia; Marchi, Lorenzo; Cavalli, Marco; Crema, Stefano; Fontana, Alessandro; Mozzi, Paolo; Venturini, Corrado

    2016-04-01

    Alluvial sediment investigations provide fundamental tools to infer the processes that control geomorphological evolution of mountain environments. By analyzing sediment stratigraphy in depth, it is possible to retrieve the source, the geology, the time of deposition, the relative distance travelled by material as well as to distinguish among different type of transport (i.e., gravitational, fluvial or glacial). In this work, we present a combination of log stratigraphy, radiocarbon dating and geophysical surveys carried out on the valley floor of the But River (Carnic Alps, North East Italy). The But River basin drains an area of 326 km2 with a range in elevation from 2769 to 323 m a.s.l.; the bedrock mainly consists of carbonates and quartz arenites with minor inclusions of effusive rocks. After Pleistocene the gravitational deposits from mountain slopes have impounded the But River several times. In particular, we analyzed a sector of the upper portion of the But valley close to the confluence of the Moscardo Torrent, frequently affected by debris flows. A borehole was drilled in the But River floodplain, at the intersection with the Moscardo Torrent alluvial fan, down to a depth of 80 m. The analysis of the core samples allowed discerning three sedimentary levels rich in clay and organic materials, which testify the presence of small dam lakes, originated from the Moscardo debris-flow deposits. Three samples of wood and plant debris were collected from 13, 14 and 23 m of depth, respectively. They were analyzed through radiocarbon dating in order to determine the age of the lakes and, thus, to infer the activity of the debris flows building the Moscardo cone. The calibrated ages of the 3 samples are close to the younger limit of the radiocarbon method indicating a fast aggradation of the valley floor, starting from a period ranging between 1450 - 1632 AD. Historical maps and documents confirm the presence of the lakes until 19th century and they permit to assess

  12. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  13. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO{sub 2} thin films deposited by electron beam evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohanty, P. [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kabiraj, D. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Mandal, R.K. [Department of Metallurgical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kulriya, P.K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.S.K. [Department of Chemical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rath, Chandana, E-mail: chandanarath@yahoo.com [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India)

    2014-04-15

    TiO{sub 2} thin films deposited by electron beam evaporation technique annealed in either O{sub 2} or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O{sub 2} atmosphere. While the pristine film shows a super-paramagnetic behavior, both O{sub 2} and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O{sub 2} annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O{sub 2} annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O{sub 2} annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO{sub 2} film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO{sub 2} films were deposited by e-beam evaporation technique and post annealed under O{sub 2}/Ar at 500 °C. • The pristine film shows SPM behavior where as O{sub 2} and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O{sub 2} annealed film than the Ar annealed one. • The higher M{sub s} in O{sub 2

  14. Depth determination of the subsurface uranium deposits using CR-39 cylindrical technique in Gneissoic granitic rocks, Abu Rushied area, Southeastern Desert, Egypt

    Directory of Open Access Journals (Sweden)

    Sayed F. Hassan

    2015-10-01

    Full Text Available Using solid state nuclear track detectors and employing CR-39 cylindrical technique, the depth of the subsurface uranium deposits were determined. This techniques depends mainly on the nuclear track detector situated in zigzag form inside a polyethylene cylinder of 65 cm length and 7 cm diameter. This technique was applied on a borehole in a granite mass Abu Rushied area, southeast area desert. The obtained results revealed that, the depth of U -ore deposited reached about 89 m with thickness nearly 24 m. The obtained data for radon concentrations were also used for the determination of the exhalation rates, the measured values for exhalation rate (mBqm−2h−1 varies between 6.14E-03 at h = 50 cm and 4.53E-02 at h = 10 cm, The obtained values are comparable with that recorded for the granite type of rock.

  15. OPTICAL PROPERTIES OF Al:ZnO THIN FILM DEPOSITED BY DIFFERENT SOL-GEL TECHNIQUES: ULTRASONIC SPRAY PYROLYSIS AND DIP-COATING

    Directory of Open Access Journals (Sweden)

    Ebru Gungor

    2016-08-01

    Full Text Available Undoped and Al-doped ZnO polycrystalline thin films have been fabricated on glass substrates by using a computer-controlled dip coating (DC and ultrasonic spray pyrolysis (USP systems. The film deposition parameters of DC process were optimized for the samples. In this technique, the substrate was exposed to temperature gradient using a tube furnace. In the study, the other solvent-based technique was conventional USP. The zinc salt and Al salt concentrations in the solution were kept constant as 0.1 M and 2% of Zn salt’s molarity, respectively. The optical properties were compared for the films deposited two different techniques. The optical transmission of Al:ZnO/Glass/Al:ZnO sample dip coated and  the optical transmission of Al:ZnO/Glass sample ultrasonically sprayed were determined higher than 80% in the visible and near infrared region. Experimental optical transmittance spectra of the films in the forms of FilmA/Glass/FilmA and FilmA/glass were used to determine the optical constants. It was observed that the optical band gaps of Al doped ZnO films onto glass substrate were increases with increase of Al content and the absorption edge shifted to the shorter wavelength (blue shift compared with the undoped ZnO thin film.

  16. Photoluminescence imaging of Eu(III) doped Y{sub 2}O{sub 3} nanorods on a Si substrate deposited by an electrospray technique

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Weon Gyu; Park, Miso; Kim, Jinhyoung [Department of Mechanical Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Joo, Sang Woo [School of Mechanical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Cho, Insu [Department of Chemistry, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Sohn, Youngku, E-mail: youngkusohn@ynu.ac.kr [Department of Chemistry, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of)

    2014-08-28

    Eu(III)-doped Y{sub 2}O{sub 3} nanorods were deposited onto a Si substrate by an electrospray technique and the photoluminescence imaging profiles of the electrospray film and powder form were compared. The electrospray method enabled generation of a uniform monolayer film without much clustering of nanorods. Strong emission peaks were observed between 580 and 730 nm in response to an indirect excitation transition and assigned to {sup 5}D{sub 0} → {sup 7}F{sub J} (J = 0–4) transitions of Eu(III) ions embedded at the C{sub 2} symmetry site in Y{sub 2}O{sub 3}. No emission in response to the direct excitation transition of Eu(III) ions was observed, while light was emitted from the Eu(III)-doped Y{sub 2}O{sub 3} powder. Taken together, these findings indicate that the electrospray technique could be very useful for generating thin films for displays and sensors. - Highlights: • Eu(III)-doped Y{sub 2}O{sub 3} nanorod was synthesized by a hydrothermal method. • Eu(III)-Y{sub 2}O{sub 3} nanorod was deposited onto a Si substrate by electrospray technique. • Photoluminescence (PL) imaging was obtained for electrospray and powder samples. • For electrospray film, PL was only observed by an indirect excitation unlike power. • Interfacial electronic structures were examined before and after annealing.

  17. Characterization of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films deposited by electron-beam technique

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, H; Parlak, M [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Kaleli, M, E-mail: parlak@metu.edu.t [Department of Physics, Sueleyman Demirel University, 32260 Isparta (Turkey)

    2009-08-21

    AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were deposited onto a quartz substrate by the electron-beam technique. For the investigation of the annealing effect on structural, optical and electrical properties of deposited films, samples were annealed in the temperature range 300-775 {sup 0}C. The composition analyses of the deposited films carried out by energy dispersive x-ray analysis measurements have shown that the deposited AgGa{sub 0.5}In{sub 0.5}Se{sub 2} films were indium- and gallium-rich but selenium- and slightly silver-deficient and there was a remarkable change in composition with annealing. As a result of x-ray diffraction measurements, the as-deposited films were found to have an amorphous structure and after annealing at 300 {sup 0}C a polycrystalline structure with different phases was observed. However, subsequent annealing resulted in the formation of single phase AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin film at about 775 {sup 0}C. The absorption coefficient of the films was determined from the transmission spectra and the band gap values were calculated and found to vary between 1.57 and 2.43 eV following annealing in the temperature range 300-775 {sup 0}C. The refractive index (n) and extinction coefficient (k) of the films were evaluated by applying the envelope method to the transmission spectra. The spectral distributions of these quantities for both as-deposited and annealed films were determined in detail and it was observed that there has been a remarkable influence of annealing on these quantities. The electrical properties of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were also investigated by means of temperature dependent conductivity measurements in the temperature range 100-460 K. The resistivity of the samples depending on the annealing temperature varied between 6.5 x 10{sup 5} and 16 {Omega} cm. As a result of the hot-probe method it was observed that the as-deposited films have indicated an n-type behaviour, while all the

  18. Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface

    Directory of Open Access Journals (Sweden)

    Jan Píchal

    2013-01-01

    Full Text Available Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD. We used the plasma enhanced chemical vapour deposition (PECVD method applying atmospheric dielectric barrier discharge (ADBD plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA. The film morphology was tested by atomic force microscopy (AFM. The thickness of the thin films varied in the range of (80 ÷ 210 nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.

  19. Morphology of carbon nanotubes prepared via chemical vapour deposition technique using acetylene: A small angle neutron scattering investigation

    Indian Academy of Sciences (India)

    D Sen; K Dasgupta; J Bahadur; S Mazumder; D Sathiyamoorthy

    2008-11-01

    Small angle neutron scattering (SANS) has been utilized to study the morphology of the multi-walled carbon nanotubes prepared by chemical vapour deposition of acetylene. The effects of various synthesis parameters like temperature, catalyst concentration and catalyst support on the size distribution of the nanotubes are investigated. Distribution of nanotube radii in two length scales has been observed. The number density of the smaller diameter tubes was found more in number compared to the bigger one for all the cases studied. No prominent scaling of the structure factor was observed for the different synthesis conditions.

  20. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  1. Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

    Science.gov (United States)

    Shougaijam, B.; Swain, R.; Ngangbam, C.; Lenka, T. R.

    2017-06-01

    The effect of annealing on vertically aligned TiO2 NWs deposited by glancing angle deposition (GLAD) method on Si substrate using pressed and sintered TiO2 pellets as source material is studied. The FE-SEM images reveal the retention of vertically aligned NWs on Si substrate after annealing process. The EDS analysis of TiO2 NWs sample annealed at 600 °C in air for 1 h shows the higher weight percentage ratio of ˜2.6 (i.e., 72.27% oxygen and 27.73% titanium). The XRD pattern reveals that the polycrystalline nature of anatase TiO2 dominates the annealed NWs sample. The electrical characteristics of Al/TiO2-NWs/TiO2-TF/p-Si (NW device) and Al/TiO2-TF/p-Si (TF device) based on annealed samples are compared. It is riveting to observe a lower leakage current of ˜1.32 × 10-7 A/cm2 at +1 V with interface trap density of ˜6.71 × 1011 eV-1 cm-2 in NW device compared to ˜2.23 × 10-7 A/cm2 in TF device. The dominant leakage mechanism is investigated to be generally Schottky emission; however Poole-Frenkel emission also takes place during high reverse bias beyond 4 V for NWs and 3 V for TF device.

  2. PECVD-grown carbon nanotubes on silicon substrates with a nickel-seeded tip-growth structure

    Energy Technology Data Exchange (ETDEWEB)

    Abdi, Y. [Thin Film Laboratory, ECE Department, University of Tehran, Tehran (Iran, Islamic Republic of); Physics Department, University of Tehran, Tehran (Iran, Islamic Republic of); Koohsorkhi, J. [Thin Film Laboratory, ECE Department, University of Tehran, Tehran (Iran, Islamic Republic of); Physics Department, University of Tehran, Tehran (Iran, Islamic Republic of); Derakhshandeh, J. [Thin Film Laboratory, ECE Department, University of Tehran, Tehran (Iran, Islamic Republic of)]. E-mail: derakhshad@yahoo.com; Mohajerzadeh, S. [Thin Film Laboratory, ECE Department, University of Tehran, Tehran (Iran, Islamic Republic of)]. E-mail: smohajer@tfl.ir; Hoseinzadegan, H. [Thin Film Laboratory, ECE Department, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M.D. [Department of Physics, Acadia University, Wolfville, Nova Scotia (Canada); Bennett, J.C. [Department of Physics, Acadia University, Wolfville, Nova Scotia (Canada); Wu, X. [Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario (Canada); Radamson, H. [Thin Film Laboratory, ECE Department, University of Tehran, Tehran (Iran, Islamic Republic of)

    2006-07-15

    Vertically aligned carbon nanotubes were grown on silicon substrates by DC-PECVD using nickel as the catalyst particle and a mixture of acetylene and hydrogen as the feed gases. It was observed that larger nickel particles resulted in larger diameter nanotubes whereas lower plasma power densities increased the spatial density of the nanotubes. The carbon nanotubes were characterized by scanning and transmission-electron microscopies and the growth mode was found to be tip initiated. The external diameter of the tubes ranged between 50 nm and 100 nm depending on the growth conditions and the diameter of the internal pore of the tube varied between about 5 nm and 8 nm. Selected area electron diffraction patterns taken from the nickel catalyst particle located at the tip of the tube suggest that (011) lattice planes may be the catalytically active sites on the top surface of the nickel.

  3. New regime of RF PECVD for the growth of a-Si:H and its alloys with improved electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Middya, A.R. [Solarex, Newtown, PA (United States). Thin Film Div.; Hazra, S.; Ray, S. [IACS, Calcutta (India). Energy Research Unit; Longeaud, C.; Kleider, J.P. [Ecole Superieure d`Electricite, Gif-Sur-Yvette (France). Lab. de Genie Electrique de Paris

    1997-12-31

    a-Si:H and its alloy developed under a new regime ({alpha}-{gamma}{prime} transition zone) of discharge of RE PECVD and using strong helium dilution show lots of new characteristics. The value of {mu}{tau} of the resulting films is enhanced by a factor of 10 to 100 (independent of Fermi level position) and concomitantly the DOS above Fermi level of a-Si:H and a-SiGe:H ([Ge] {le} 0.20) is much lower than that of standard samples. The carrier mobility measured by Time Resolved Microwave Conductivity (TRMC) is increased by a factor of 2 to 3. HRTEM micrograph shows region of ordered structure (nanocrystal) embaded in amorphous matrix. The reproducibility of this type of materials in different reactors has been confirmed. Thus, inclusion of ordered network structure in amorphous matrix could be the new way to improve electronic properties of a=Si:H and its alloys.

  4. The influence of charge effect on the growth of hydrogenated amorphous silicon by the hot-wire chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q.; Nelson, B.P.; Iwaniczko, E.; Mahan, A.H.; Crandall, R.S.; Benner, J. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors observe at lower substrate temperatures that the scatter in the dark conductivity on hydrogenated amorphous silicon (a-Si:H) films grown on insulating substrates (e.g., Corning 7059 glass) by the hot-wire chemical vapor deposition technique (HWCVD) can be five orders of magnitude or more. This is especially true at deposition temperatures below 350 C. However, when the authors grow the same materials on substrates with a conductive grid, virtually all of their films have acceptable dark conductivity (< 5 {times} 10{sup {minus}10} S/cm) at all deposition temperatures below 425 C. This is in contrast to only about 20% of the materials grown in this same temperature range on insulating substrates having an acceptable dark conductivity. The authors estimated an average energy of 5 eV electrons reaching the growing surface in vacuum, and did additional experiments to see the influence of both the electron flux and the energy of the electrons on the film growth. Although these effects do not seem to be important for growing a-Si:H by HWCVD on conductive substrates, they help better understand the important parameters for a-Si:H growth, and thus, to optimize these parameters in other applications of HWCVD technology.

  5. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  6. Optical properties of double layer thin films zinc oxide doping aluminum (ZnO/Al) were deposited on glass substrates by sol gel method spray coating technique

    Science.gov (United States)

    Permatasari, Anes; Sutanto, Heri; Marito Siagian, Sinta

    2017-01-01

    Thin films of double layer of ZnO/Al has succeeded in deposition on a glass substrate using sol-gel method and spray coating techniques. Variations of doping Al as much as 2%, 4%, 6% and 8%. ZnO precursor synthesized using zinc acetate dehydrate (Zn(COOCH3)2.2H2O), isopropanol ((CH3)2CHOH) and monoethanolamine (MEA) were stirred using a magnetic stirrer for 45 minutes. ZnO precursor get homogeneous and then added of aluminum nitrate nonahydrate predetermined doping concentration and stirred again for 15 minutes. Deposition solution is done by the spray on a glass substrate and then heated at a temperature of 450°C. A layer of ZnO/Al deposited over the ZnO to produce a thin layer of a double layer. Optical properties layer of ZnO/Al characterized using UV-Vis spectrophotometer. Based on data from UV-Vis absorbance was determined the value of the energy band gap. Pure and dopped layers has different energy due the Al dopping. For pure ZnO layer has energy band gap of 3.347 eV and decreased to 3.09 eV for ZnO layer with Al dopant.

  7. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    Science.gov (United States)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  8. Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

    Science.gov (United States)

    Akgul, Funda Aksoy; Akgul, Guvenc

    2017-02-01

    Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

  9. Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

    Science.gov (United States)

    2007-06-01

    a pulsed laser ablation supersonic expansion method" Applied Physics Letters 64, 1821. Windischmann H (1991), "Intrinsic stress and mechanical...orientation boron doped silicon wafers. The nominal gas flow rates of silane -based oxide are 300 standard cubic center meters per minute of SiH4, 500...sccm of N20 and 1500 sccm of N2. Depositions were carried out at 4000C with a nominal deposition rate of 1 pm/min. The chemical reaction of silane -based

  10. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-12-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10(-13)A, I on/I off ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  11. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-03-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/ I off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  12. Technique for the estimation of surface temperatures from embedded temperature sensing for rapid, high energy surface deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Watkins, Tyson R.; Schunk, Peter Randall; Roberts, Scott Alan

    2014-07-01

    Temperature histories on the surface of a body that has been subjected to a rapid, highenergy surface deposition process can be di cult to determine, especially if it is impossible to directly observe the surface or attach a temperature sensor to it. In this report, we explore two methods for estimating the temperature history of the surface through the use of a sensor embedded within the body very near to the surface. First, the maximum sensor temperature is directly correlated with the peak surface temperature. However, it is observed that the sensor data is both delayed in time and greatly attenuated in magnitude, making this approach unfeasible. Secondly, we propose an algorithm that involves tting the solution to a one-dimensional instantaneous energy solution problem to both the sensor data and to the results of a one-dimensional CVFEM code. This algorithm is shown to be able to estimate the surface temperature 20 C.

  13. The effect of oxygen flow rate on refractive index of aluminum oxide film deposited by electron beam evaporation technique

    Directory of Open Access Journals (Sweden)

    R Shakouri

    2016-02-01

    Full Text Available The effects of oxygen flow rate on refractive index of aluminum oxide film have been investigated. The Al2O3 films are deposited by electron beam on glass substrate at different oxygen flow rates. The substrate was heated to reach  and the temperature was constant during the thin film growth. The transmittance spectrum of samples was recorded in the wavelength 400-800 nm.  Then, using the maxima and minima of transmittance the refractive index and the extinction coefficient of samples were determined. It has been found that if we reduce the oxygen flow, while the evaporation rate is kept constant, the refractive index of Al2O3 films increases. On the other hand, reduced oxygen pressure causes the Al2O3 films to have some absorption.

  14. Optical and structural properties of ZnO hexagonal rods prepared by thermal chemical vapor deposition technique

    Directory of Open Access Journals (Sweden)

    A Reyhani

    2014-11-01

    Full Text Available In this research, ZnO nanostructure hexagonal pyramid rods with high optical and structural quality were synthesized by the simple thermal chemical vapor deposition of Zn powder without a metal catalyst. Surface morphologies were characterized by scanning electron microscopy (SEM. XRD analyses demonstrated that ZnO hexagonal pyramid rods had a wurtzite structure with the orientation of (002. Investigation of optical properties of samples by photoluminescence spectrum exhibited a sharp UV emission peak at 380nm. The quality and composition of the ZnO pyramid rods were characterized using the Fourier transform infrared spectrum (FTIR at room temperature. In addition, the growth mechanism of ZnO hexagonal rods is also briefly discussed.

  15. Use of a novel double uterine deposition artificial insemination technique using low concentrations of sperm in pigs.

    Science.gov (United States)

    Mozo-Martín, R; Gil, L; Gómez-Rincón, C F; Dahmani, Y; García-Tomás, M; Úbeda, J L; Grandía, J

    2012-07-01

    Currently, the three most important non-surgical artificial insemination systems used in pigs are the conventional, the post-cervical (IUI), and the deep-intrauterine (DIUI) methods. In this study, a new system, termed double uterine deposition insemination (DUDI), which combines aspects of both IUI and DIUI, was evaluated. This method used a thinner, shorter and more flexible catheter than those normally used for DIUI and resulted in the deposition of semen post-cervically, approximately half-way along the uterine horn, thus potentially by-passing the threat of 'unilateral' insemination or pregnancy when using sperm of low concentration. The experiment was carried out over 8 weeks on a group of 166 sows, which were divided into seven groups, inseminated with semen of varying concentration, using the conventional system (control group) or by DUDI. There were no significant differences in fertility at day 35 post-insemination between the controls and the various DUDI sub-groups. Only sows inseminated with 500 million viable spermatozoa in a total of 30 mL of fluid using the DUDI system demonstrated decreased total litter sizes when compared to conventional insemination (Pinsemination normally uses 2.5-3.5 billion sperm, the findings of this study suggest that DUDI can be used under 'field' conditions with sperm concentrations as low as 750 million spermatozoa in 50-30 mL without any detrimental effect on fertility or litter size. DUDI may provide a viable, robust alternative to IUI and DIUI, and has the potential to become incorporated into on-farm insemination systems.

  16. Evaluating the Effect of Surface Roughness on Titanium Dioxide Nanoparticle Deposition using a Combined Quartz Crystal Microbalance with Dissipation (QCM-D) and Generalized Ellipsometry (GE) Technique

    Science.gov (United States)

    Kananizadeh, N.; Lee, J.; Rodenhausen, K. B.; Sekora, D.; Schubert, M.; Schubert, E.; Bartelt-Hunt, S.; Li, Y.

    2016-12-01

    Quantification and characterization of nanoparticles in soils and sediments are very challenging because they will interact not only with soil-water chemistry but also with highly heterogeneous soil and sediment surfaces. In this work, we measured the interaction of Titanium dioxide nanoparticles (nTiO2), the most extensively manufactured engineered materials, with engineered rough surfaces under varied ionic strength conditions. Innovative three-dimensional Silicon nanostructured surfaces, referred to here as slanted columnar thin films (SCTFs), were used to generate surface roughness with controlled heights of 50nm, 100nm, and 200nm. Using atomic layer deposition technique (ALD), surfaces of SCTF were coated with either silicon dioxide or aluminum oxides to represent the most abundant silica aquifer materials and metal oxide impurities, respectively. The interaction between nTiO2 and model rough surfaces was measured using quartz crystal microbalance with dissipation monitoring (QCM-D). The data were analyzed using a model that couples the viscoelastic effect with the surface roughness effect. No nTiO2 deposition was observed on neither flat nor rough silicon dioxide surfaces under ionic strength ranged from 0 to 100 mM NaCl. On the other hand, the deposition of nTiO2 on the aluminum oxides coated surfaces increased as the height of roughness increased. In parallel with QCM-D, a Generalized Ellipsometry (GE) was used to measure the mass of deposited nTiO2. The combination of QCM-D and GE revealed that the properties (i.e. porosity and rigidness) of attached nTiO2 layer on the QCM-D surfaces were dependent on ionic strength and surface roughness.

  17. Characterization of the Micro-Orifice Uniform Deposit Impactor-droplet freezing technique (MOUDI-DFT) for size-resolved quantitative measurements of ice nuclei

    Science.gov (United States)

    Mason, Ryan; Si, Meng; Li, Jixiao; Huffman, J. Alex; McCluskey, Christina; Levin, Ezra; Irish, Victoria; Chou, Cédric; Hill, Thomas; Ladino, Luis; Yakobi, Jacqueline; Schiller, Corinne; Abbatt, Jon; DeMott, Paul; Bertram, Allan

    2014-05-01

    Ice formation within a cloud system can significantly modify its lifetime and radiative forcing. Many current instruments for measuring atmospheric concentrations of ice nuclei (IN) are not capable of providing size-resolved information. Such knowledge is useful in identifying the sources of IN and predicting their transport in the atmosphere. Furthermore, those that use size-discrimination to identify IN typically exclude particles with an aerodynamic diameter greater than 2.5 μm from analysis. Several studies have indicated this may be an important size regime for IN, particularly with those activating at warmer temperatures. The recently developed Micro-Orifice Uniform Deposit Impactor-droplet freezing technique (MOUDI-DFT) addresses these limitations through combining sample collection by a model of cascade impactor with an established immersion freezing apparatus. Here we present a characterization of the MOUDI-DFT and the development of a modified technique which address experimental uncertainties arising from sample deposit inhomogeneity and the droplet freezing method. An intercomparison with a continuous-flow diffusion chamber (CFDC) was performed. We also show preliminary results from a campaign undertaken in a remote coastal region of western Canada. Correlations between atmospheric IN concentrations and the abundance of suspended submicron and supermicron particles, biological aerosols, carbonaceous aerosols, and prevailing meteorological conditions were investigated.

  18. Synthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Borade, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Joshi, K.U. [Anton-Paar India Pvt. Ltd., Thane (W), 400607 (India); Gokarna, A.; Lerondel, G. [Laboratoire de Nanotechnologie et D' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 Rue Marie Curie, BP 2060, 10010 Troyes (France); Walke, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Late, D. [National Chemical Laboratory (NCL), Pune 400027 (India); Jejurikar, S.M., E-mail: jejusuhas@gmail.com [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India)

    2016-02-01

    We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. - Highlights: • Controlled growth of Dumbbell shaped ZnO using Chemical Bath Deposition (CBD). • Growth mechanism of dumbbell shaped ZnO by self-assembling was discussed. • Quick Transformation of ZnO dumbbell structures in to tubular structures by dissolution. • Sharp UV Emission at 370 nm from both dumbbell and tubular structures.

  19. Deposition of TiN coatings using ACPVD technique on AM60 alloy; Recubrimientos de TiN depositados mediante ACPVD sobre aleaciones de magnesio AM60

    Energy Technology Data Exchange (ETDEWEB)

    Pichel, M.; Candela, N.; Barea, R.; Conejero, G.; Carsi, M.

    2013-06-01

    Magnesium alloys are reaching special interest due to their good specific properties, low cost and good manufacturing properties. However, their low hardness, wear and corrosion resistance limit their applications in certain sectors of industry. These drawbacks can be solved by applying hard ceramic coatings, such as nitrides or metal carbides. TiN is one of the most used coatings due to its high adhesion, hardness, low coefficient of friction and chemical stability. Physical vapor deposition by cathodic arc CAPVD, is a versatile technique, which uses low temperatures and high ionization energies, generating homogeneous coatings. To achieve coatings with high quality, a careful control of the manufacturing parameters is required, such as bias voltage, gas flow or intensity. This paper focuses on magnesium alloys, AM60, coated with TiN using physical vapor deposition cathodic arc technique (CAPVD) at different intensity values (40A and 100A) and surface preparation (grinding up to 4000 grit and polished to 3{mu}m). It was included a final condition with an intermediate Al film. The samples were characterized by X-ray diffraction, roughness, optical microscopy and scanning electron. (Author) 28 refs.

  20. Deposition and characterization of silicon thin-films by aluminum-induced crystallization

    Science.gov (United States)

    Ebil, Ozgenc

    Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined

  1. Optical and morphological properties of SiN{sub x}/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Santana, G.; Melo, O. de; Monroy, B.M.; Fandino, J.; Ortiz, A.; Alonso, J.C. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Cd. Universitaria, A.P. 70-360, Coyoacan (Mexico); Aguilar-Hernandez, J.; Cruz, F.; Contreras-Puentes, G. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional; Edificio 9, U.P.A.L.M. (Mexico)

    2005-08-01

    Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH{sub 2}Cl{sub 2}/H{sub 2}/NH{sub 3} mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400 and ordm;C, the band at 2.1 eV disappears. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques.

    Science.gov (United States)

    Lee, Byoung H; Anderson, Virginia R; George, Steven M

    2014-10-08

    Molecular layer deposition (MLD) of the hafnium alkoxide polymer known as "hafnicone" was grown using sequential exposures of tetrakis(dimethylamido) hafnium (TDMAH) and ethylene glycol (EG) as the reactants. In situ quartz crystal microbalance (QCM) experiments demonstrated self-limiting reactions and linear growth versus the number of TDMAH/EG reaction cycles. Ex situ X-ray reflectivity (XRR) analysis confirmed linear growth and measured the density of the hafnicone films. The hafnicone growth rates were temperature-dependent and decreased from 1.2 Å per cycle at 105 °C to 0.4 Å per cycle at 205 °C. The measured density was ∼3.0 g/cm(3) for the hafnicone films at all temperatures. Transmission electron microscopy images revealed very uniform and conformal hafnicone films. The XRR studies also showed that the hafnicone films were very stable with time. Nanoindentation measurements determined that the elastic modulus and hardness of the hafnicone films were 47 ± 2 and 2.6 ± 0.2 GPa, respectively. HfO2/hafnicone nanolaminate films also were fabricated using HfO2 atomic layer deposition (ALD) and hafnicone MLD at 145 °C. The in situ QCM measurements revealed that HfO2 ALD nucleation on the hafnicone MLD surface required at least 18 TDMAH/H2O cycles. Hafnicone alloys were also fabricated by combining HfO2 ALD and hafnicone MLD at 145 °C. The composition of the hafnicone alloy was varied by adjusting the relative number of TDMAH/H2O ALD cycles and TDMAH/EG MLD cycles in the reaction sequence. The electron density changed continuously from 8.2 × 10(23) e(-)/cm(3) for pure hafnicone MLD films to 2.4 × 10(24) e(-)/cm(3) for pure HfO2 ALD films. These hafnicone films and the HfO2/hafnicone nanolaminates and alloys may be useful for flexible thin-film devices.

  3. Deposition of duplex Al 2O 3/aluminum coatings on steel using a combined technique of arc spraying and plasma electrolytic oxidation

    Science.gov (United States)

    Gu, Weichao; Shen, Dejiu; Wang, Yulin; Chen, Guangliang; Feng, Wenran; Zhang, Guling; Fan, Songhua; Liu, Chizi; Yang, Size

    2006-02-01

    Plasma electrolytic oxidation (PEO) is a cost-effective technique that can be used to prepare ceramic coatings on metals such as Ti, Al, Mg, Nb, etc., and their alloys, but this promising technique cannot be used to modify the surface properties of steels, which are the most widely used materials in engineering. In order to prepare metallurgically bonded ceramic coatings on steels, a combined technique of arc spraying and plasma electrolytic oxidation (PEO) was adopted. In this work, metallurgically bonded ceramic coatings on steels were obtained using this method. We firstly prepared aluminum coatings on steels by arc spraying, and then obtained the metallurgically bonded ceramic coatings on aluminum coatings by PEO. The characteristics of duplex coatings were analyzed by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). The corrosion and wear resistance of the ceramic coatings were also studied. The results show that, duplex Al 2O 3/aluminum coatings have been deposited on steel substrate after the combined treatment. The ceramic coatings are mainly composed of α-Al 2O 3, γ-Al 2O 3, θ-Al 2O 3 and some amorphous phase. The duplex coatings show favorable corrosion and wear resistance properties. The investigations indicate that the combination of arc spraying and plasma electrolytic oxidation proves a promising technique for surface modification of steels for protective purposes.

  4. 3D granular deposits on rock avalanches: can the application of different operators and filtering techniques improve our understanding of the phenomena?

    Science.gov (United States)

    Longchamp, Celine; Abellan, Antonio; Derron, Marc-Henri; Jaboyedoff, Michel

    2014-05-01

    Rock avalanches are catastrophic events involving a great volume of material (>106 m3). The flowing mass can reach velocities up to ten meters per second and travel long distances on the order of kilometres, covering an area over 0.1 km2. These extremely destructive and uncontrollable events are very unusual in nature and the use of analogue modelling is of great importance in the understanding of the behaviour of such events. The main objective of this research is to analyse rock avalanche dynamics by means of a detailed structural analysis of the features observed in the avalanche. Data used for this research consist on 3D measurements of mass movements of different magnitudes, from decimetre level scale laboratory experiments to well-studied rock avalanches of several square kilometres magnitude, as follows: (1) Laboratory experiments are performed on a tilting plane in which a well-defined granular material is released, chute down a slope, propagate and finally stop on a horizontal surface. The deposits are then scanned by a 3D digitizer (Konica Minolta vivid 9i micro-LiDAR) in order to get a 3D geometrical model of the mass. Different grainsize (115, 545 and 2605 μm) and substratum roughness (simulate by aluminium and sandpapers with grainsize from 16 to 425 μm) were used in order to understand their influence on the motion of a granular mass; (2) A well know rock avalanche deposit, the Frank slide (Alberta, Canada), was also analysed from the available 3D LiDAR dataset. This deposit consists in a 30× 106 m3 rockslide-avalanche of Palaeozoic limestone that was widely studied by several authors before (e.g. Cruden and Hungr, 1986, Cruden and Krahn, 1973, etc). In order to better understand the fault and folding structures presented in the rock avalanche deposits, we applied a series of linear and non-linear Matlab operators and filtering techniques to the 3D datasets, including differences derivatives ('diff'), numerical gradient ('gradient'), discrete

  5. Review on dust depositing on PV module and cleaning techniques%光伏面板积灰及除尘清洁技术研究综述

    Institute of Scientific and Technical Information of China (English)

    鲍官军; 张林威; 蔡世波; 蒋建东; 胥芳; 贾桂红

    2013-01-01

    Aiming at the problems of PV module dust depositing,affecting factors,the reducing effect on conversion efficiency,the related researches were overviewed and the main researching aspects in the future were proposed.The source and components of dust were introduced.Research documents about the PV module dust depositing process and the PV efficiency decline or solar radiation transmittance decline caused by dust depositing were emphasized and reviewed.The main factors of module angle,wind speed and orientation,dust property,environment humidity,which will influence the dust depositing,PV efficiency and solar radiation transmittance,were analyzed.The dust depositing model and its impacting model on PV efficency from the perspective of dust property,dust falling and raining were summarized.The commonly used PV module cleaning techniques,that is electrode screen dust mitigation and mechanical dust cleaning,were introduced.Finally,the shortages of present research were abstracted and the main research aspects in the future,such as the integrality of the dust depositing experiment,dust characteristics,dust depositing mechanism and PV panel cleaning techniques,were pointed out.%针对光伏面板积灰、影响因素、积灰对面板转换效率的降低效应等问题,综述分析了国内外相关研究成果,总结提出了今后研究的主要方向.介绍了灰尘的来源及组成,着重综述了国内外关于光伏面板积灰形成过程及积灰引起的面板输出效率降低或太阳辐射透过率降低等研究文献,分析了面板倾角、风速风向、灰尘性质、环境湿度等主要因素对光伏面板积灰的形成和面板效率/太阳辐射透过率的影响.总结了基于灰尘性质、降尘、降雨等因素建立的积灰模型及其对面板效率的影响模型.介绍了目前常用的光伏面板清洁技术:电帘除尘和机械除尘.最后,总结了目前研究中存在的不足,并指出了今后应进一步加强积灰实验完

  6. A Comparative Study of Three Different Chemical Vapor Deposition (CVD) Techniques of Carbon Nanotube Growth on Diamond Films

    Science.gov (United States)

    2013-01-01

    a,b , Paul N. Barnes c , Chakrapani V. Varanasi e , Jack Burke d , Bang -Hung Tsao d , and Sharmila M. Mukhopadhyay b a. Air Force Research...catalysts play a big role in the structure and properties of the resulting CNTs. The three different techniques compared here have two different approaches...catalysts at the interface suggests the silica nanolayer keeps them anchored and prevents them from migrating during CNT growth. Figure 5: Cross

  7. Coupling spectroscopic and chromatographic techniques for evaluation of the depositional history of hydrocarbons in a subtropical estuary.

    Science.gov (United States)

    Martins, César C; Doumer, Marta E; Gallice, Wellington C; Dauner, Ana Lúcia L; Cabral, Ana Caroline; Cardoso, Fernanda D; Dolci, Natiely N; Camargo, Luana M; Ferreira, Paulo A L; Figueira, Rubens C L; Mangrich, Antonio S

    2015-10-01

    Spectroscopic and chromatographic techniques can be used together to evaluate hydrocarbon inputs to coastal environments such as the Paranaguá estuarine system (PES), located in the SW Atlantic, Brazil. Historical inputs of aliphatic hydrocarbons (AHs) and polycyclic aromatic hydrocarbons (PAHs) were analyzed using two sediment cores from the PES. The AHs were related to the presence of biogenic organic matter and degraded oil residues. The PAHs were associated with mixed sources. The highest hydrocarbon concentrations were related to oil spills, while relatively low levels could be attributed to the decrease in oil usage during the global oil crisis. The results of electron paramagnetic resonance were in agreement with the absolute AHs and PAHs concentrations measured by chromatographic techniques, while near-infrared spectroscopy results were consistent with unresolved complex mixture (UCM)/total n-alkanes ratios. These findings suggest that the use of a combination of techniques can increase the accuracy of assessment of contamination in sediments. Copyright © 2015 Elsevier Ltd. All rights reserved.

  8. Atmospheric deposition of rare earth elements in Albania studied by the moss biomonitoring technique, neutron activation analysis and GIS technology.

    Science.gov (United States)

    Allajbeu, Sh; Yushin, N S; Qarri, F; Duliu, O G; Lazo, P; Frontasyeva, M V

    2016-07-01

    Rare earth elements (REEs) are typically conservative elements that are scarcely derived from anthropogenic sources. The mobilization of REEs in the environment requires the monitoring of these elements in environmental matrices, in which they are present at trace level. The determination of 11 REEs in carpet-forming moss species (Hypnum cupressiforme) collected from 44 sampling sites over the whole territory of the country were done by using epithermal neutron activation analysis (ENAA) at IBR-2 fast pulsed reactor in Dubna. This paper is focused on REEs (lanthanides) and Sc. Fe as typical consistent element and Th that appeared good correlations between the elements of lanthanides are included in this paper. Th, Sc, and REEs were never previously determined in the air deposition of Albania. Descriptive statistics were used for data treatment using MINITAB 17 software package. The median values of the elements under investigation were compared with those of the neighboring countries such as Bulgaria, Macedonia, Romania, and Serbia, as well as Norway which is selected as a clean area. Geographical distribution maps of the elements over the sampled territory were constructed using geographic information system (GIS) technology. Geochemical behavior of REEs in moss samples has been studied by using the ternary diagram of Sc-La-Th, Spider diagrams and multivariate analysis. It was revealed that the accumulation of REEs in current mosses is associated with the wind-blowing metal-enriched soils that is pointed out as the main emitting factor of the elements under investigation.

  9. RETRACTED: Ammonia-free method for synthesis of CdS nanocrystalline thin films through chemical bath deposition technique

    Science.gov (United States)

    Karimi, M.; Rabiee, M.; Moztarzadeh, F.; Bodaghi, M.; Tahriri, M.

    2009-11-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief of Solid State Communications as the authors have plagiarized part of a paper that has also appeared in Current Applied Physics: Controlled synthesis, characterization and optical properties of CdS nanocrystalline thin films via chemical bath deposition (CBD) route Meysam Karimi, Mohammad Rabiee, Fathollah Moztarzadeh, Mohammadreza Tahriri and Masoud Bodaghi; Curr. Appl. Phys., 9 (2009) 1263-1268, doi: 10.1016/j.cap.2009.02.006. One of the conditions of submission of a paper for publication is that authors declare explicitly that their work is original and has not appeared in a publication elsewhere. Re-use of any data should be appropriately cited. As such this article represents a severe abuse of the scientific publishing system. The scientific community takes a very strong view on this matter and apologies are offered to readers of the journal that this was not detected during the submission process.

  10. Optimization of parameters by Taguchi method for controlling purity of carbon nanotubes in chemical vapour deposition technique.

    Science.gov (United States)

    Dasgupta, K; Sen, D; Mazumder, S; Basak, C B; Joshi, J B; Banerjee, S

    2010-06-01

    The process parameters (viz. temperature of synthesis, type of catalyst, concentration of catalyst and type of catalyst-support material) for controlling purity of carbon nanotubes synthesized by catalytic chemical vapour deposition of acetylene have been optimized by analyzing the experimental results using Taguchi method. It has been observed that the catalyst-support material has the maximum (59.4%) and the temperature of synthesis has the minimum effect (2.1%) on purity of the nanotubes. At optimum condition (15% ferrocene supported on carbon black at the synthesis temperature of 700 degrees C) the purity of nanotubes was found out to be 96.2% with yield of 1900%. Thermogravimetry has been used to assess purity of nanotubes. These nantubes have been further characterized by scanning electron microscopy, transmission electron microscopy and Raman Spectroscopy. Small angle neutron scattering has been used to find out their average inner and outer diameter using an appropriate model. The nanotubes are well crystallized but with wide range of diameter varying between 20-150 nm.

  11. Fabricating a pearl/PLGA composite scaffold by the low-temperature deposition manufacturing technique for bone tissue engineering

    Energy Technology Data Exchange (ETDEWEB)

    Xu Mingen; Li Yanlei; Suo Hairui; Wang Qiujun; Ge Yakun; Xu Ying [Center Laboratory of Biomanufacture and Tissue Engineering, Hang Zhou Dianzi University, Hangzhou 310018 (China); Yan Yongnian; Liu Li, E-mail: xumingen@tsinghua.edu.c, E-mail: xumingen@hdu.edu.c [Key Laboratory for Advanced Materials Processing Technology, Ministry of Education and Center of Organ Manufacturing, Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

    2010-06-15

    Here we developed a composite scaffold of pearl/poly(lactic-co-glycolic acid) (pearl/PLGA) utilizing the low-temperature deposition manufacturing (LDM). LDM makes it possible to fabricate scaffolds with designed microstructure and macrostructure, while keeping the bioactivity of biomaterials by working at a low temperature. Process optimization was carried out to fabricate a mixture of pearl powder, PLGA and 1,4-dioxane with the designed hierarchical structures, and freeze-dried at a temperature of -40 deg. C. Scaffolds with square and designated bone shape were fabricated by following the 3D model. Marrow stem cells (MSCs) were seeded on the pearl/PLGA scaffold and then cultured in a rotating cell culture system. The adhesion, proliferation and differentiation of MSCs into osteoblasts were determined using scanning electronic microscopy, WST-1 assay, alkaline phosphatase activity assay, immunofluorescence staining and real-time reverse transcription polymerase chain reaction. The results showed that the composite scaffold had high porosity (81.98 +- 3.75%), proper pore size (micropores: <10 mum; macropore: 495 +- 54 mum) and mechanical property (compressive strength: 0.81 +- 0.04 MPa; elastic modulus: 23.14 +- 0.75 MPa). The pearl/PLGA scaffolds exhibited better biocompatibility and osteoconductivity compared with the tricalcium phosphate/PLGA scaffold. All these results indicate that the pearl/PLGA scaffolds fulfill the basic requirements of bone tissue engineering scaffold.

  12. Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gačević, Ž., E-mail: gacevic@isom.upm.es; Calleja, E. [Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Rossbach, G.; Butté, R.; Glauser, M.; Levrat, J.; Cosendey, G.; Carlin, J.-F.; Grandjean, N. [Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Réveret, F. [Institut Pascal, UMR 6602 UBP/CNRS, Clermont Université, 24 Avenue des Landais, F-63177 Aubière Cedex (France)

    2013-12-21

    A 3λ/2 (In,Ga)N/GaN resonant cavity, designed for ∼415 nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate by metal-organic vapor phase epitaxy and an 8-period SiO{sub 2}/ZrO{sub 2} DBR, deposited by electron beam evaporation. Optical characterization reveals an improvement in the cavity emission spectral purity of approximately one order of magnitude due to resonance effects. The combination of spectrophotometric and micro-reflectivity measurements confirms the strong quality (Q)-factor dependence on the excitation spot size. We derive simple analytical formulas to estimate leak and residual absorption losses and propose a simple approach to model the Q-factor and to give a quantitative estimation of the weight of cavity disorder. The model is in good agreement with both transfer-matrix simulation and the experimental findings. We point out that the realization of high Q-factor (In,Ga)N containing microcavities on GaN pseudo-substrates is likely to be limited by the cavity disorder.

  13. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  14. Solid coatings deposited from liquid methyl methacrylate via Plasma Polymerization

    Science.gov (United States)

    Wurlitzer, Lisa; Maus-Friedrichs, Wolfgang; Dahle, Sebastian

    2016-09-01

    The polymerization of methyl methacrylate via plasma discharges is well known today. Usually, plasma-enhanced chemical vapor deposition (PECVD) is used to deposit polymer coatings. Solid coatings are formed out of the liquid phase from methyl methacrylate via dielectric barrier discharge. The formation of the coating proceeds in the gas and the liquid phase. To learn more about the reactions in the two phases, the coatings from MMA monomer will be compared to those from MMA resin. Finally, attenuated total reflection infrared spectroscopy, confocal laser scanning microscopy and X-ray photoelectron spectroscopy are employed to characterize the solid coatings. In conclusion, the plasma enhanced chemical solution deposition is compared to the classical thermal polymerization of MMA.

  15. Growth and photoluminescence of Si-SiOx nanowires by catalyst-free chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Luo, Ruiying, E-mail: ryluo@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); School of Materials Science and Engineering, Shanxi University of Technology, Hanzhong 723000 (China); Shang, Haidong [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2016-04-15

    Graphical abstract: - Highlights: • The Si-SiOx NWs were successfully synthesized via a one-step catalyst-free CVD method using TEOS as the precursor. • The Si-SiOx NWs had a core–shell structure with Si as the inner crystalline cores and SiOx as the outer amorphous layer. • The formation of Si-SiOx NWs was implemented by the non-classical crystallization mechanism. • The Si-SiOx NWs spontaneously self-assembled from the building block of charged nanoparticles. • The Si-SiOx NWs showed their potential applications in UV emission and visible light emission devices. - Abstract: We developed a one-step catalyst-free chemical vapor deposition process to synthesize Si-SiOx nanowires using tetraethoxysilane as the precursor. Observations using scanning electron microscopy showed that the Si-SiOx nanowires were 20–50 nm in diameter and tens of microns in length. The high-resolution transmission electron microscope analysis and X-ray diffraction demonstrated that the nanowires consisted of crystal silicon and amorphous SiOx. The Si and O with an atomic ratio of the Si-SiOx NWs were 1:1.2 according to the energy dispersion X-ray spectroscope. A systematic study on the effect of the growth conditions, such as reaction temperature, the reaction time, and the TEOS vapor flow rate was performed. The formation of Si-SiOx nanowires was implemented by the non-classical crystallization mechanism. The charged nanoparticles acting as building blocks self-assembled into nanowires. The photoluminescence measurements were carried out and showed that the Si-SiOx nanowires emitted stable ultraviolet and green luminescence excited by ultraviolet light.

  16. Performance improvement of n-i-p μc-Si:H solar cells by gradient hydrogen dilution technique

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the structural evolution of intrinsic films and the performance of n-i-p microcrystal-line silicon solar cells.The experiment results demonstrated that the grain size and crystalline volume fraction along the growth direction of intrinsic films can be controlled and the performance of solar cells can be greatly improved by gradient hydrogen dilution technique.An initial active-area efficiency of 5.7%(Voc=0.47V,Jsc=20.2mA/cm2,FF=60%)for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.12%(Voc=1.2V,Jsc=12.05mA/cm2,FF=70%)for the a-Si:H/μc-Si:H tandem n-i-p solar cells has been achieved.

  17. A field technique for rapid lithological discrimination and ore mineral identification: Results from Mamandur Polymetal Deposit, India

    Indian Academy of Sciences (India)

    D Ramakrishnan; M Nithya; K D Singh; Rishikesh Bharti

    2013-02-01

    This work illustrates the efficiency of field spectroscopy for rapid identification of minerals in ore body, alteration zone and host rocks. The adopted procedure involves collection of field spectra, their processing for noise, spectral matching and spectral un-mixing with selected library end-members. Average weighted spectral similarity and effective peak matching techniques were used to draw end-members from library. Constrained linear mixture modelling technique was used to convolve end-member spectra. Linear mixture model was optimized based on root mean square error between field- and modelled-spectra. Estimated minerals and their abundances were subsequently compared with conventional procedures such as petrography, X-ray diffraction and X-ray fluorescence for accuracy assessment. The mineralized zone is found to contain azurite, galena, chalcopyrite, bornite, molybdenite, marcacite, gahnite, hematite, goethite, anglesite and malachite. The alteration zone contains chlorite, kaolinite, actinolite and mica. These mineral assemblages correlate well with the petrographic measurements (2 = 0.89). Subsequently, the bulk chemistry of field samples was compared with spectroscopically derived cumulative weighted mineral chemistry and found to correlate well (2 = 0.91–0.98) at excellent statistical significance levels (90–99%). From this study, it is evident that field spectroscopy can be effectively used for rapid mineral identification and abundance estimation.

  18. Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Aydinli, Atilla

    2004-08-01

    We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43x1022 cm-3 down to below 0.06x1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 sccm. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=632.8 nm were found to increase from are 0.20 +/- 0.02 to 6.46 +/- 0.04 dB/cm as the germane flow rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=1550 nm were found to decrease from 0.32 +/- 0.03 down to 0.14 +/- 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.

  19. Emitter formation using laser doping technique on n- and p-type c-Si substrates

    Science.gov (United States)

    López, G.; Ortega, P.; Colina, M.; Voz, C.; Martín, I.; Morales-Vilches, A.; Orpella, A.; Alcubilla, R.

    2015-05-01

    In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiCx/a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 Ω cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J-V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.

  20. Dating Magmatic Hornblende and Biotite and Hydrothermal Sericite by Laser Probe Technique:Constraints on Genesis of Wangershan Gold Deposit, Eastern Shandong Province,China

    Institute of Scientific and Technical Information of China (English)

    Li Jianwei; Vasconcelos P M; Zhou M F; Duzgoren-Aydin N S

    2003-01-01

    The Wangershan gold deposit and spatially related Shangzhuang granite, eastern Shandong Province, have been precisely dated by 40 Ar/39 Ar laser incremental heating technique. Magmatic hornblende and biotite, collected from the Shangzhuang granites, yielded well-defined and reproducible plateau ages at 128. 1-127.5 and 124.4-124. 1 Ma (2σ), measuring the cooling ages of the intrusion at ca. 500 ℃ and 300-350 ℃, respectively. Hydrothermal sericite extracted from auriferous vein gave high-quality plateau ages between (120. 6±0.3) Ma and (120. 0±0. 4) Ma (2σ). Given the similarity of the closure temperature for argon diffusion (300-350 ℃ ) in the sericite mineral to the homogenization temperature of primary fluid inclusions in the quartz from gold ores, and the intergrowth of sericite with native gold, present 40Ar/39 Ar sericite ages can be reliably interpreted in terms of the mineralization age for the Wangershan deposit. 40 Ar/39 Ar hornblende and biotite ages permit an estimate for the cooling rate of the Shangzhuang granite at about 50 ℃/Ma. There are abundant intermediate-mafic dikes in most gold camps of eastern Shandong, whose ages of formation have been previously constrained mainly at 121-119 Ma. The temporal association between the Shangzhuang granite, the Wangershan gold deposit, and the widespread dikes confirms that intrusive activity, gold mineralization, and dike emplacement in this region were broadly coeval, reflecting significant continental lithosphere thinning and resulting crustal extension of Early Cretaceous in eastern China.

  1. An investigation of localised surface plasmon resonance (LSPR) of Ag nanoparticles produced by pulsed laser deposition (PLD) technique

    Science.gov (United States)

    Gezgin, Serap Yiǧit; Kepceoǧlu, Abdullah; Kılıç, Hamdi Şükür

    2017-02-01

    Noble metal nano-structures such as Ag, Cu, Au are used commonly to increase power conversion efficiency of the solar cell by using their surface plasmons. The plasmonic metal nanoparticles of Ag among others that have strong LSPR in near UV range. They increase photon absorbance via embedding in the active semiconductor of the solar cell. Thin films of Ag are grown in the desired particle size and interparticle distance easily and at low cost by PLD technique. Ag nanoparticle thin films were grown on micro slide glass at 25-36 mJ laser pulse energies under by PLD using ns-Nd:YAG laser. The result of this work have been presented by carrying out UV-VIS and AFM analysis. It was concluded that a laser energy increases, the density and size of Ag-NPs arriving on the substrate increases, and the interparticle distance was decreases. Therefore, LSPR wavelength shifts towards to longer wavelength region.

  2. Investigations of the structural, morphological and electrical properties of multilayer ZnO/TiO2 thin films, deposited by sol-gel technique

    Science.gov (United States)

    Khan, M. I.; Bhatti, K. A.; Qindeel, Rabia; Bousiakou, Leda G.; Alonizan, Norah; Fazal-e-Aleem

    Investigations of the structural, morphological and electrical properties of multilayer ZnO/TiO2 thin films deposited by sol-gel technique on glass substrate. Sol-gel is a technique in which compound is dissolved in a liquid in order to bring it back as a solid in a controlled manner. TiO2 solution was obtained by dissolving 0.4 g of TiO2 nano powder in 5 ml ethanol and 5 ml diethylene glycol. ZnO solution was obtained by dissolving 0.88 g zinc acetate in 20 ml of 2-methoxyethanol. X-ray diffraction (XRD) (PW 3050/60 PANalytical X'Pert PRO diffractometer) results showed that the crystallinity is improved when the number of ZnO/TiO2 layers increased. Also it shows the three phases (rutile, anatase and brookite) of TiO2. Surface morphology measured by scanning electron microscopy (SEM) (Quanta 250 fei) revealed that Crakes are present on the surface of ZnO/TiO2 thin films which are decreased when the number of ZnO/TiO2 layers increased. Four point probe (KIETHLEY instrument) technique used to investigate the electrical properties of ZnO/TiO2 showed the average resistivity decreased by increasing the number of ZnO/TiO2 layers. These results indicated that the multilayer thin films improved the quality of film crystallinity and electrical properties as compared to single layer.

  3. Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of Fe{sub x}S{sub x} nano thin films deposited by SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Manikandan, K., E-mail: 1984manikandan@gmail.com [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Mani, P. [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Surendra Dilip, C. [Department of Chemistry, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Valli, S. [Department of Physics, M.I.E.T. Arts and Science College, Tiruchirappalli 620 007, Tamilnadu (India); Fermi Hilbert Inbaraj, P.; Joseph Prince, J. [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India)

    2014-01-01

    Iron sulfide thin films (Fe{sub x}S{sub x}) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV–vis analysis.

  4. Development of graded Ni-YSZ composite coating on Alloy 690 by Pulsed Laser Deposition technique to reduce hazardous metallic nuclear waste inventory.

    Science.gov (United States)

    Sengupta, Pranesh; Rogalla, Detlef; Becker, Hans Werner; Dey, Gautam Kumar; Chakraborty, Sumit

    2011-08-15

    Alloy 690 based 'nuclear waste vitrification furnace' components degrade prematurely due to molten glass-alloy interactions at high temperatures and thereby increase the volume of metallic nuclear waste. In order to reduce the waste inventory, compositionally graded Ni-YSZ (Y(2)O(3) stabilized ZrO(2)) composite coating has been developed on Alloy 690 using Pulsed Laser Deposition technique. Five different thin-films starting with Ni80YSZ20 (Ni 80 wt%+YSZ 20 wt%), through Ni60YSZ40 (Ni 60 wt%+YSZ 40 wt%), Ni40YSZ60 (Ni 40 wt%+YSZ 60 wt%), Ni20YSZ80 (Ni 20 wt%+YSZ 80 wt%) and Ni0YSZ100 (Ni 0 wt%+YSZ 100 wt%), were deposited successively on Alloy 690 coupons. Detailed analyses of the thin-films identify them as homogeneous, uniform, pore free and crystalline in nature. A comparative study of coated and uncoated Alloy 690 coupons, exposed to sodium borosilicate melt at 1000°C for 1-6h suggests that the graded composite coating could substantially reduced the chemical interactions between Alloy 690 and borosilicate melt.

  5. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  6. Anti-microbial surfaces: An approach for deposition of ZnO nanoparticles on PVA-Gelatin composite film by screen printing technique.

    Science.gov (United States)

    Meshram, J V; Koli, V B; Phadatare, M R; Pawar, S H

    2017-04-01

    Initially micro-organisms get exposed to the surfaces, this demands development of anti-microbial surfaces to inhibit their proliferation. Therefore, herein, we attempt screen printing technique for development of PVA-GE/ZnO nanocomposite (PG/ZnO) films. The synthesis of PG/ZnO nanocomposite includes two steps as: (i) Coating of Zinc Oxide nanoparticles (ZnO NPs) by poly ethylene glycol in order to be compatible with organic counterparts. (ii) Deposition of coated nanoparticles on the PG film surface. The results suggest the enhancement in anti-microbial activity of PG/ZnO nanocomposite over pure ZnO NPs against both Gram positive Bacillus subtilis and Gram negative Escherichia coli from zone of inhibition. The uniformity in deposition is further confirmed by scanning electron microscopy (SEM) images. The phase identification of ZnO NPs and formation of PG/ZnO nanocomposite has been confirmed by X-ray diffraction (XRD) analysis and UV-vis spectroscopy (UV-vis). The Attenuated total reflection Spectroscopy (ATR) analysis indicates the ester bond between PVA and gelatin molecules. The thermal stability of nanocomposite is studied by thermogravimetric analysis (TGA) revealing increase in crystallinity due to ZnO NPs which could be utilized to inhibit the growth of micro-organisms. The tensile strength is found to be higher and percent elongation is double of PG/ZnO nanocomposite than PG composite film.

  7. Sn and Cu oxide nanoparticles deposited on TiO{sub 2} nanoflower 3D substrates by Inert Gas Condensation technique

    Energy Technology Data Exchange (ETDEWEB)

    Kusior, A., E-mail: akusior@agh.edu.pl [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Kollbek, K. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Kowalski, K. [Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Borysiewicz, M. [Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Wojciechowski, T. [Institute of Physics Polish Academy of Science, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Adamczyk, A.; Trenczek-Zajac, A.; Radecka, M. [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Zakrzewska, K. [Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland)

    2016-09-01

    Graphical abstract: - Highlights: • Inert Gas Condensation method yields non-agglomerated nanoparticles. • The growth of nanoparticles is controllable at the level of deposition. • Electrical conductivity increases with respect to pure nanostructured TiO{sub 2}. - Abstract: Sn and Cu oxide nanoparticles were deposited by Inert Gas Condensation (IGC) technique combined with dc magnetron sputtering onto nanoflower TiO{sub 2} 3D substrates obtained in the oxidation process of Ti-foil in 30% H{sub 2}O{sub 2}. Sputtering parameters such as insertion length and Ar/He flow rates were optimized taking into account the nanostructure morphology. Comparative studies with hydrothermal method were carried out. Surface properties of the synthesized nanomaterials were studied by Scanning Electron Microscopy, SEM, Atomic Force Microscopy, AFM, and X-ray Photoelectron Spectroscopy, XPS. X-ray diffraction, XRD and Raman spectroscopy were performed in order to determine phase composition. Impedance spectroscopy demonstrated the influence of nanoparticles on the electrical conductivity.

  8. Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of FexSx nano thin films deposited by SILAR technique

    Science.gov (United States)

    Manikandan, K.; Mani, P.; Surendra Dilip, C.; Valli, S.; Fermi Hilbert Inbaraj, P.; Joseph Prince, J.

    2014-01-01

    Iron sulfide thin films (FexSx) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV-vis analysis.

  9. Porous Silicon & Titanium Dioxide Coatings Prepared by Atmospheric Pressure Plasma Jet Chemical Vapour Deposition Technique-A Novel Coating Technology for Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    S. Bhatt

    2011-01-01

    Full Text Available Atmospheric Pressure Plasma Jet (APPJ is an alternative for wet processes used to make anti reflection coatings and smooth substrate surface for the PV module. It is also an attractive technique because of it’s high growth rate, low power consumption, lower cost and absence of high cost vacuum systems. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO thin films and titanium dioxide from tetraisopropyl ortho titanate using an atmospheric pressure plasma jet (APPJ system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The jet, characterized by Tg ~ 600-800 K, was mostly laminar (Re ~ 1200 at the nozzle exit and became partially turbulent along the jet axis (Re ~ 3300. The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, Cu and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm. Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800 -1000 nm.s-1, and AFM results revealed that coatings are relatively smooth (Ra ~ 2 nm. The FTIR and SEM analyses were better used to monitor the chemical composition and the morphology of the films in function of the different experimental conditions.

  10. Preparation and characterization of YBa{sub 2}Cu{sub 3}O{sub 7-x} thick films deposited on silver substrates by the electrophoretic deposition technique for magnetic screening applications

    Energy Technology Data Exchange (ETDEWEB)

    Grenci, G [Politecnico di Torino, Dipartimento di Scienza dei Materiali ed Ingegneria Chimica, 10129 Turin (Italy); Denis, S [SUPRATECS group, Department of Electrical Engineering and Computer Science (B28), University of Liege, Sart-Tilman, 4000 Liege (Belgium); Dusoulier, L [CISS Department, Royal Military Academy, Brussels (Belgium); Pavese, F [CNR, Istituto di Metrologia ' G Colonnetti' , Turin (Italy); Penazzi, N [Politecnico di Torino, Dipartimento di Scienza dei Materiali ed Ingegneria Chimica, 10129 Turin (Italy)

    2006-04-15

    The production of magnetic shields using high-temperature superconductors (HTS) is not straightforward, as these materials are brittle ceramics. In this paper, we report the results of investigations concerning the use of the electrophoretic deposition (EPD) technique to produce magnetic shields of various shapes and with large surface areas, in the form of a thick coating of HTS on a metallic substrate. For the first time, we report shielding characterization of samples prepared by the EPD technique. The most important problems concern the choice of the process parameters and the heat treatment of the coating, in order to obtain a dense and well-connected polycrystalline system. We have used the HTS compound YBa{sub 2}Cu{sub 3}O{sub 7-x} as the coating material and silver as the substrate. An optimized heat treatment, in an atmosphere with poor oxygen content, was chosen following experimental investigations. Different samples were produced in the form of slabs for chemical, structural and electrical characterization. A cylindrical sample was prepared for magnetic shielding measurements at 77 K. With an applied magnetic field parallel to its axis, the cylinder presents a high level of shielding (>80 dB) at low frequencies, for applied inductions lower than 0.1 mT. If the applied induction is higher than 0.25 mT, the magnetic field inside the cylinder strongly increases. This value is close to the field of penetration given by Bean's model, taking a critical current density of 500 A cm{sup -2} measured by the four-probe technique on similar samples.

  11. Optical and local structural study of Gd doped ZrO{sub 2} thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Haque, S. Maidul, E-mail: skmaidulhaque@gmail.com; Shinde, D. D.; Misal, J. S. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, VIZAG Centre, Visakhapatnam-530012 (India); Jha, S. N.; Bhattacharyya, D.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre. Mumbai – 400094 (India)

    2015-06-24

    ZrO{sub 2} samples with 0, 7, 9, 11, 13 % Gd doping have been prepared by RF magnetron sputtering deposition technique for solid oxide fuel cell application. The optical properties of the samples have been studied by transmission spectrophotometry and spectroscopic ellipsometry while the local structure surrounding Zr sites has been characterized by extended x-ray absorption fine structure (EXAFS) measurement at Zr K edge with synchrotron radiation. It has been observed that beyond 11% Gd doping, band gap decreases and refractive index increases significantly and also oxygen and Zr coordinations surrounding Zr sites increase which indicates the formation of Gd clustering in ZrO{sub 2} matrix beyond this doping concentration.

  12. Fe3O4/γ-Fe2O3 nanoparticle multilayers deposited by the Langmuir-Blodgett technique for gas sensors application.

    Science.gov (United States)

    Capone, S; Manera, M G; Taurino, A; Siciliano, P; Rella, R; Luby, S; Benkovicova, M; Siffalovic, P; Majkova, E

    2014-02-04

    Fe3O4/γ-Fe2O3 nanoparticles (NPs) based thin films were used as active layers in solid state resistive chemical sensors. NPs were synthesized by high temperature solution phase reaction. Sensing NP monolayers (ML) were deposited by Langmuir-Blodgett (LB) techniques onto chemoresistive transduction platforms. The sensing ML were UV treated to remove NP insulating capping. Sensors surface was characterized by scanning electron microscopy (SEM). Systematic gas sensing tests in controlled atmosphere were carried out toward NO2, CO, and acetone at different concentrations and working temperatures of the sensing layers. The best sensing performance results were obtained for sensors with higher NPs coverage (10 ML), mainly for NO2 gas showing interesting selectivity toward nitrogen oxides. Electrical properties and conduction mechanisms are discussed.

  13. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    Science.gov (United States)

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results.

  14. Comparative study of the structure and corrosion behavior of Zr-20%Cr and Zr-20%Ti alloy films deposited by multi-arc ion plating technique

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Farhat, E-mail: ilatahraf@yahoo.com [National Centre for Nanotechnology, Department of Metallurgy and Materials Engineering (DMME), Pakistan Institute of Engineering and Applied Sciences (PIEAS), PO Nilore, Islamabad 45650 (Pakistan); Mehmood, Mazhar, E-mail: mazhar@pieas.edu.pk [National Centre for Nanotechnology, Department of Metallurgy and Materials Engineering (DMME), Pakistan Institute of Engineering and Applied Sciences (PIEAS), PO Nilore, Islamabad 45650 (Pakistan); Qasim, Abdul Mateen; Ahmad, Jamil; Naeem-ur-Rehman [National Centre for Nanotechnology, Department of Metallurgy and Materials Engineering (DMME), Pakistan Institute of Engineering and Applied Sciences (PIEAS), PO Nilore, Islamabad 45650 (Pakistan); Iqbal, Muhammad [Physics Division, Pakistan Institute of Science and Technology (PINSTECH), Islamabad 45650 (Pakistan); Qureshi, Ammad H. [Materials Division, Pakistan Institute of Science and Technology (PINSTECH), Islamabad 45650 (Pakistan)

    2014-08-01

    The primary focus of the present work was to perform comparative study of the structure as well as corrosion behavior of two Zr-rich alloy films, i.e. Zr-20%Cr and Zr-20%Ti, as well as metallic Ti, Cr and Zr films, formed by multi-arc ion plating technique. The required alloy film composition was obtained by co-deposition with proper choice of current for the targets of the constituent metals. The deposited alloy film composition was determined by energy dispersion X-ray spectroscopy, X-ray fluorescence and inductively coupled plasma-atomic emission spectroscopy (ICP-AES) techniques, which were in close agreement with each other. The film thickness lied in the range of 550-620 nm. The crystal structure was studied by X-ray diffraction, which revealed the formation of nanocrystalline and semi-amorphous structures. The corrosion rates of the films were determined through weight loss measurement in 1 M, 6 M and 12 M hydrochloric acid (HCl) by ICP-AES analysis of the solution after immersion for 200-350 h. Anodic (potentiodynamic) polarization was also performed. Zr-20%Cr alloy film exhibited the best corrosion resistance, and its dissolution rate was less than 0.5 μm/year in 6 M HCl and about 4 μm/year in 12 M HCl. - Highlights: • Fine control over the stoichiometry of each alloy film • Development of either nano-crystalline or semi-amorphous alloy films • Development of highly corrosion resistant films.

  15. Effect of Mn doping on the electrical and optical properties of SnO{sub 2} thin films deposited by chemical spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Indira Gandhi, T. [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramesh Babu, R., E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur 603 203, Tamil Nadu (India); Arivanandhan, M. [Nanodevices and Nanomaterials Division, Research Institute of Electronics, Shizuoka University, Hamamatsu 432 8011 (Japan)

    2016-01-01

    Manganese doped tin oxide (Mn:SnO{sub 2}) thin films were deposited by spray pyrolysis technique adding various concentrations of manganese acetate (0–8 at.%) in the spray solution of tin chloride. X-ray diffraction studies show the preferred growth along (301) direction for 0.0–2.0 at.% concentration of manganese acetate in the spray solution. Higher doping concentration of manganese acetate (4 and 8 at.%) in the solution shifts the preferred growth direction along (200) plane. Scanning electron microscopic studies reveal the change in the surface morphology of the films due to various levels of Mn doping. X-ray photoelectron spectroscopic analysis shows that in the prepared thin film manganese atoms exist in Mn{sup 3+} state. The sheet resistance of SnO{sub 2} film decreases from ~ 23.5 Ω/□ to 22.8 Ω/□ for 0.4 at.% doping concentration and increases with increasing Mn concentration in the solution. The average optical transmittance of SnO{sub 2} thin film increases from 34% to 55% in the wavelength region of 550–850 nm with increase in Mn concentration. Mn concentration in the films influences the intensity of the photoluminescence emission peak observed for SnO{sub 2} film at 398 nm. - Highlights: • Mn:SnO2 thin films deposited with different doping concentration by spray pyrolysis technique • Structural information confirms that all the films are polycrystalline and tetragonal crystal structure. • XPS studies confirm the oxidation state of Mn (3 +) and Sn (4 +) in Mn:SnO{sub 2} thin film. • 0.4 at.% of Mn:SnO{sub 2} thin film shows lowest sheet resistance 22.8 Ω/□. • Optical band gap of 1.2 at.% Mn:SnO{sub 2} thin film is about 3.70 eV.

  16. Molecular self ordering and charge transport in layer by layer deposited poly (3,3‴-dialkylquarterthiophene) films formed by Langmuir-Schaefer technique

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Rajiv K.; Singh, Arun Kumar; Upadhyay, C.; Prakash, Rajiv, E-mail: rprakash.mst@itbhu.ac.in [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2014-09-07

    The performance of π-conjugated polymer based electronic devices is directly governed by the molecular morphology of polymer aggregation, the extent to which a molecule is electronically coupled (self ordered and interacted) to neighboring molecules, and orientation. The well electronic coupled and crystalline/ordered polymer films have the potential to enhance the charge transport properties up to a benchmark. However, there is insufficient knowledge about the direct formation of large area, oriented, crystalline, and smooth films. In this study, we have presented Langmuir Schaefer technique to obtain the large area, oriented, crystalline, and smooth film of Poly (3,3‴-dialkylquarterthiophene) (PQT-12) polymer. The effect of self ordering and orientation of PQT-12 polymer on optical, morphological, and charge transport properties has been investigated. The prepared films have been characterized by UV-vis spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), selected area diffractions pattern (SAED), and atomic force microscopy (AFM) techniques. UV-vis spectra, TEM, SAED, and AFM images of monolayer films reveal the formation of well ordered and electronically coupled polymer domains. Layer by layer deposited films reveal the change in the orientation, which is confirmed by Raman spectra. Electronic properties and layer dependent charge transport properties are investigated using sandwiched structure Al/PQT-12/ITO Schottky configuration with perpendicular to the deposited films. It is observed that the charge transport properties and device electronic parameters (ideality factor and turn on voltage) are significantly changing with increasing the number of PQT-12 layers. Our study also demonstrates the charge transport between polymer crystallites and cause of deviation of ideal behavior of organic Schottky diodes. It may be further explored for improving the performance of other organic and optoelectronic devices.

  17. Optimal Materials and Deposition Technique Lead to Cost-Effective Solar Cell with Best-Ever Conversion Efficiency (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2012-07-01

    This fact sheet describes how the SJ3 solar cell was invented, explains how the technology works, and why it won an R&D 100 Award. Based on NREL and Solar Junction technology, the commercial SJ3 concentrator solar cell - with 43.5% conversion efficiency at 418 suns - uses a lattice-matched multijunction architecture that has near-term potential for cells with {approx}50% efficiency. Multijunction solar cells have higher conversion efficiencies than any other type of solar cell. But developers of utility-scale and space applications crave even better efficiencies at lower costs to be both cost-effective and able to meet the demand for power. The SJ3 multijunction cell, developed by Solar Junction with assistance from foundational technological advances by the National Renewable Energy Laboratory, has the highest efficiency to date - almost 2% absolute more than the current industry standard multijunction cell-yet at a comparable cost. So what did it take to create this cell having 43.5% efficiency at 418-sun concentration? A combination of materials with carefully designed properties, a manufacturing technique allowing precise control, and an optimized device design.

  18. Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

    Science.gov (United States)

    Choi, S. W.; Bachmann, K. J.; Lucovsky, G.

    1993-01-01

    Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

  19. Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

    Science.gov (United States)

    Choi, S. W.; Bachmann, K. J.; Lucovsky, G.

    1993-01-01

    Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

  20. PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

    Directory of Open Access Journals (Sweden)

    Natalita M. Nursam

    2010-01-01

    Full Text Available The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-SiN:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45 GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine the surface recombination velocity and emitter saturation current density as a function of net charge density. Our results show that the application of negative charge causes a substantial reduction in the surface recombination of samples with boron diffused emitters, even for high boron surface concentrations of 5×1019 cm−3. The significant difference observed in surface recombination between boron diffused and undiffused sample under accumulation implies that the presence of boron diffusion has results in some degradation of the Si-SiN interface. Further, (111 oriented surfaces appear more sensitive to the boron surface concentration than (100 oriented surfaces.

  1. The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm and 18″ (450 mm wafers with the development of 3D full chamber modeling and experimental visual technique

    Directory of Open Access Journals (Sweden)

    M.-H. Liao

    2013-07-01

    Full Text Available The thin film deposition property and the process difference during the wafer size migration from 12″ (300 mm to 18″ (450 mm in the Chemical Vapor Deposition (CVD equipment is improved and reduced, respectively, when the chamber hardware is designed with the help of 3D full chamber modeling and 3D experimental visual technique developed in this work. The accuracy of 3D chamber simulation model is demonstrated with the experimental visual technique measurement. With the CVD chamber hardware design of placing the inlet position and optimizing the distance between the susceptor edge and the reactor wall, the better thin film deposition property and the larger process compatibility during the wafer size migration from 12″ (300 mm to 18″ (450 mm for the industry cost reduction can be achieved. Non-dimensional Nusselt parameter is also found to be the effective indicator to monitor the thin film deposition property.

  2. Influence of bias voltage on the optical and structural properties of nc-Si:H films grown by layer-by-layer (LBL) deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Tong, Goh Boon, E-mail: boontong77@yahoo.co [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Gani, Siti Meriam Ab.; Muhamad, Muhamad Rasat; Rahman, Saadah Abdul [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2009-07-01

    The effects of applying a positive bias of 25 to 100 V on the optical, structural and photoluminescence (PL) properties of hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL) deposition technique has been studied. Optical characterization of the films has been obtained from UV-VIS-NIR spectroscopy measurements. Structural characterization has been performed using X-ray diffraction, micro-Raman spectroscopy and field emission scanning electron microscope (FESEM). PL spectroscopy technique has been used to investigate the PL properties of the films. In general, the films formed shows a mixed phase of silicon (Si) nanocrystallites embedded within an amorphous phase of the Si matrix. The crystalline volume fraction and grain size of the Si nanocrystallites have been shown to be strongly dependent on the applied bias voltage. High applied bias voltage enhances the growth rate of the films but reduces the refractive index and the optical energy gap of the films. Higher crystalline volume fraction of the films prepared at low bias voltages exhibits room temperature PL at around 1.8 eV (700 nm).

  3. Application of the electrophoretic deposition technique for obtaining Yttria-stabilized zirconia tubes; Aplicacao da tecnica de deposicao eletroforetica para a obtencao de tubos ceramicos de zirconia-itria

    Energy Technology Data Exchange (ETDEWEB)

    Caproni, E.; Muccillo, R., E-mail: ecaproni@gmail.com, E-mail: muccillo@usp.br [Centro de Ciencia e Tecnologia de Materiais, Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2012-01-15

    The electrophoretic deposition (EPD) is recognized as the most versatile technique for processing particulate materials, due to low cost, deposition in minutes and forming of pieces with complex geometry shapes. In this work an experimental setup for the simultaneous conformation of 16 ceramic tubes by EPD was built. Bimodal submicron Yttria-stabilized zirconia particles were deposited into graphite electrodes, after suitably adjusting the rheological characteristics of the suspension in isopropanol. After graphite burning and YSZ sintering at 1500 deg C, the ceramic tubes were characterized by X-ray diffraction, scanning probe microscope, impedance spectroscopy and electrical response as a function of oxygen content. Small dense one end-closed ceramic tubes, fully stabilized in the cubic phase, were successfully obtained by the EPD technique, showing the ability of that technique for processing large quantities of tubular solid electrolytes with electrical response to different amounts of oxygen according to the Nernst law (author)

  4. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    Science.gov (United States)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  5. Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

    Science.gov (United States)

    Elam, Fiona M.; Starostin, Sergey A.; Meshkova, Anna S.; van der Velden-Schuermans, Bernadette C. A. M.; van de Sanden, Mauritius C. M.; de Vries, Hindrik W.

    2017-06-01

    Industrially and commercially relevant roll-to-roll atmospheric pressure-plasma enhanced chemical vapour deposition was used to synthesize smooth, 80 nm silica-like bilayer thin films comprising a dense ‘barrier layer’ and comparatively porous ‘buffer layer’ onto a flexible polyethylene 2,6 naphthalate substrate. For both layers, tetraethyl orthosilicate was used as the precursor gas, together with a mixture of nitrogen, oxygen and argon. The bilayer films demonstrated exceptionally low effective water vapour transmission rates in the region of 6.1  ×  10-4 g m-2 d-1 (at 40 °C, 90% relative humidity), thus capable of protecting flexible photovoltaics and thin film transistors from degradation caused by oxygen and water. The presence of the buffer layer within the bilayer architecture was mandatory in order to achieve the excellent encapsulation performance. Atomic force microscopy in addition to solvent permeation measurements, confirmed that the buffer layer prevented the formation of performance-limiting defects in the bilayer thin films, which likely occur as a result of excessive plasma-surface interactions during the deposition process. It emerged that the primary function of the buffer layer was therefore to act as a protective coating for the flexible polymer substrate material.

  6. Progress of Research on Underpotential Deposition--II. Research Techniques and Application of Underpotential Deposition%欠电位沉积研究现状--II.欠电位沉积的研究方法及其应用

    Institute of Scientific and Technical Information of China (English)

    许振; 齐东梅; 江莉; 陈宇; 张昭; 张鉴清

    2015-01-01

    总结了主要的欠电位沉积(upd)的原位研究方法,包括电化学研究方法(循环伏安(CV)、计时电流(CHR)和电化学阻抗谱(EIS))、界面分析方法(电化学石英晶体微天平(EQCM)和电化学扫描隧道显微镜/电化学原子力显微镜(ECSTM/ECAFM))及X射线分析技术(X射线吸收谱(XAS)和表面X射线散射(SXS))。根据这些研究方法,总结和探讨了许多体系的upd特征,分析了upd微观特征与宏观的测试结果的对应关系及其原理。此外,探讨了基于这些研究方法得出的关于upd的重要结论,并对比分析了上述研究方法的优缺点。在upd应用领域的研究方面,主要从四个方面进行了概述,涉及功能材料电合成、电分析应用、电化学原子层外延(ECALE)和表征贵金属(或纳米)材料电化学活性面积(ECSA),并简析了上述应用研究中涉及的关于upd过程的原理。最后,总结了upd研究方法和应用研究的现状并展望了其未来发展趋势。%A variety of primary in situ research techniques applied to underpotential deposition (upd) research, including electrochemical (cyclic voltammetry (CV), chronoamperometry (CHR), and electrochemical impedance spectroscopy (EIS)), interfacial (electrochemical quartz crystal microbalance (EQCM) and electrochemical scanning tunneling microscopy/electrochemical atomic force microscopy (ECSTM/ECAFM)) and X-ray based (X-ray absorption spectroscopy (XAS) and surface X-ray scattering (SXS)) analysis techniques, are summarized in this paper. We summarize and discuss the upd characteristics of many electrochemical systems as determined by these research techniques, and analyze the corresponding relationships and principles between the upd microscopic characteristics and macroscopic test results. Some conclusions of vital importance to upd drawn based on these techniques are explicitly discussed. Also, the merits and demerits of the above-mentioned research techniques are

  7. Electrochemical behavior of TiAlSiN hard coatings synthesized by a multi-plasma immersion ion implantation and deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gengzhu [University of Science and Technology Liaoning, Anshan 114051 (China); Xie, Zhiwen, E-mail: xzw@cigit.ac.cn [University of Science and Technology Liaoning, Anshan 114051 (China); Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122 (China); Chen, Tian [Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122 (China); Chen, Zhenyu [Key Laboratory of Power Sources, Institute of Power Sources, Tianjin 300381 (China); Song, Xiaohang [Shanghai Aerospace Equipments Manufacturer, Shanghai 401122 (China); Gao, Xu; Yu, Xiaoguang; Song, Hua [University of Science and Technology Liaoning, Anshan 114051 (China)

    2015-06-01

    The TiAlSiN coatings are synthesized by a multi-plasma immersion ion implantation and deposition technique. The microstructure and the electrochemical behavior of the as-deposited coatings are investigated by using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy and electrochemical tests. These studies reveal that huge lattice distortions and dislocations emerge in the coating after introducing a small amount of Al component. These structural defects can facilitate the corrosion process of the TiAlN coating. The TiAlN coating exhibits a worse corrosion resistance performance than the TiN coating. The TiAlSiN coating has a two phase microstructure, nc-TiAlN/a-Si{sub 3}N{sub 4.} The grain size is greatly reduced after introducing Si component, whereas the portion of the a-Si{sub 3}N{sub 4} phase increases as the amount of Si increases in the coating. The reduced grain size and the increased percentage of the a-Si{sub 3}N{sub 4} phase in the TiAlSiN coatings enhance their ability in corrosion resistance. The TiAlSiN coating with a larger amount of Si shows better corrosion resistance performance. This research provides a comprehensive understanding of the relationship between the microstructure and the electrochemical behavior of the TiAlSiN hard coatings. - Highlights: • Microstructure and electrochemical behavior of TiAlSiN coatings are presented. • Al addition induces serious lattice distortions and dislocations. • Si incorporation induces an obvious grain refinement effect. • TiAlN coating shows a higher corrosion rate than the TiN coating. • TiAlSiN coating with higher Si content shows better corrosion resistance.

  8. Synthesis of core/shell ZnO/ZnSe nanowires using novel low cost two-steps electrochemical deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Ghoul, M., E-mail: ghoulmed2009@yahoo.fr [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); Braiek, Z. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); Brayek, A. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); ITODYS, Université Paris Diderot, Sorbonne Paris Cité, CNRS UMR – 7086, 75205 Paris (France); Ben Assaker, I.; Khalifa, N.; Ben Naceur, J.; Souissi, A.; Lamouchi, A. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); Ammar, S. [ITODYS, Université Paris Diderot, Sorbonne Paris Cité, CNRS UMR – 7086, 75205 Paris (France); Chtourou, R. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia)

    2015-10-25

    This work highlights the original use of a two-step electrochemical deposition protocol to grow ZnO/ZnSe core/shell nanowires on a Sn-doped In{sub 2}O{sub 3} (ITO)/glass substrate. The good alignment of the nanowires is verified by the scanning electron microscopy characterization technique in addition to the surface roughness after the ZnSe electrodeposition on the ZnO nanowires lateral facets. The X-ray diffraction patterns and Raman spectra allow estimating that ZnO has grown along the wurtzite (W) structure c-axis. The presence of the type-II interfacial transition between the valence band of ZnSe and the conduction band of ZnO was confirmed by UV–visible spectroscopy. It was proved that the absorbed energy of the developed nanostructures is extended to the near infrared which is well recommended for the photovoltaic applications. - Graphical abstract: Fabrication of the ZnO–ZnSe core–shell nanowires through a solution based all-electrochemical approach, and their application as photoanodes in photoelectrochemical water splitting cells. - Highlights: • Deposition of ZnO/ZnSe nanowires by two steps electrodeposition method. • The morphology studies show the formation of ZnO/ZnSe core/Shell nanowires. • XRD and Raman spectroscopy confirm the presence of the wurtzite ZnO and blende ZnSe junction. • Optical properties demonstrate the evidence type-II interfacial transition between the two semiconductors.

  9. 金属矿地震勘探方法技术研究综述%Reviews of seismic exploration methods and techniques for metallic ore deposits

    Institute of Scientific and Technical Information of China (English)

    阎頔; 敬荣中

    2011-01-01

    系统地总结了国内外金属矿地震勘探技术及其研究与应用现状,其中包括反射波法、折射波法、散射波法等,并就多项实验研究中采用的方法技术及取得的良好地质效果进行了概括总结,认为反射波地震方法在振测沉积层控矿床和控矿构造方面效果较好,而散射波地震方法不但可探测与矿体有关的地下局部不均匀体,而且,结合其它物探资料还可确定隐伏矿体的位置,是未来应用于金属矿地震勘探方法的发展方向.%This paper reviews the researches and applications of seismic techniques in mining exploration in details, including the reflected wave method, refraction method and scattering wave method etc. A seismic methodology for mineral exploration has been introduced and the acquired better geological results are summarized in the paper. It is indicated that the seismic reflection is applicable for delineating strata-bound sedimentary ore deposits and ore-controlling structures, while the seismic scattering waves could be used not only to detect inhomogeneous bodies related with ore bodies but also to locate the concealed orebody combined with other geophysical and geochemical information. It is the development orientation of seismic exploration methods used for metallic ore deposits in the future.

  10. Plasma deposition of silver nanoparticles on ultrafiltration membranes: antibacterial and anti-biofouling properties.

    Science.gov (United States)

    Cruz, Mercedes Cecilia; Ruano, Gustavo; Wolf, Marcus; Hecker, Dominic; Vidaurre, Elza Castro; Schmittgens, Ralph; Rajal, Verónica Beatriz

    2015-02-01

    A novel and versatile plasma reactor was used to modify Polyethersulphone commercial membranes. The equipment was applied to: i) functionalize the membranes with low-temperature plasmas, ii) deposit a film of poly(methyl methacrylate) (PMMA) by Plasma Enhanced Chemical Vapor Deposition (PECVD) and, iii) deposit silver nanoparticles (SNP) by Gas Flow Sputtering. Each modification process was performed in the same reactor consecutively, without exposure of the membranes to atmospheric air. Scanning electron microscopy and transmission electron microscopy were used to characterize the particles and modified membranes. SNP are evenly distributed on the membrane surface. Particle fixation and transport inside membranes were assessed before- and after-washing assays by X-ray photoelectron spectroscopy depth profiling analysis. PMMA addition improved SNP fixation. Plasma-treated membranes showed higher hydrophilicity. Anti-biofouling activity was successfully achieved against Gram-positive (Enterococcus faecalis) and -negative (Salmonella Typhimurium) bacteria. Therefore, disinfection by ultrafiltration showed substantial resistance to biofouling. The post-synthesis functionalization process developed provides a more efficient fabrication route for anti-biofouling and anti-bacterial membranes used in the water treatment field. To the best of our knowledge, this is the first report of a gas phase condensation process combined with a PECVD procedure in order to deposit SNP on commercial membranes to inhibit biofouling formation.

  11. Plasma deposition of silver nanoparticles on ultrafiltration membranes: antibacterial and anti-biofouling properties